CN112968022B - LED display backboard and massive transfer method and repair method thereof - Google Patents
LED display backboard and massive transfer method and repair method thereof Download PDFInfo
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Abstract
The invention provides an LED display backboard and a massive transfer method and a repairing method thereof, wherein the massive transfer method comprises the following steps: a back plate; a first backplane electrode and a second backplane electrode disposed on the backplane; a first groove and a second groove disposed on the backplate and between the first backplate electrode and the second backplate electrode; the first piezoelectric electrode is arranged in the first groove, and the second piezoelectric electrode is arranged in the second groove; the piezoelectric crystal is fixed on the back plate and is in sliding contact with the first piezoelectric electrode and the second piezoelectric electrode; and the piezoelectric crystal contracts along the direction parallel to the back plate in the electrified state. This application is bound and is separated through can realizing the quick binding of LED chip to piezoelectric crystal break-make electric energy and bind, avoids fixed processes such as adhesive, precuring and metal bonding, removes high energy laser from and shines at LED chip repair in-process, avoids high energy laser to circuit, adjacent LED chip's influence, can realize LED chip position alignment adjustment.
Description
Technical Field
The invention belongs to the technical field of LED display, and particularly relates to an LED display back plate and a mass transfer method and a repair method thereof.
Background
Micro Light Emitting diodes (Micro-LEDs) are a new generation of display technology, and since pixel units can be controlled to be under 100 micrometers, the Micro Light Emitting diodes have obvious advantages in brightness, color gamut, response speed, resolution and power consumption compared with conventional display technologies, and are widely invested and researched by various manufacturers and scientific research institutions in recent years.
In the Micro-led manufacturing process, the mass transfer technology is the key point that restricts the efficiency and cost of the product. The bulk transfer technology transfers a single LED chip from a substrate to a display backplane, and permanently bonds the LED chip and the display backplane by using an adhesive and metal welding. However, the existing mass transfer technology has the following problems that the binding step is complex, the requirements on the process, materials and equipment of the metal flux welding process are strict, and the risk of insufficient soldering, short circuit and the like exists in the manufacturing process. On the other hand, the binding is permanent and not repairable, the damaged LED chip can only be removed by laser, the bottom layer circuit and the adjacent LED chip are easily thermally damaged, products are subjected to more points, and the yield of the whole LED panel is influenced.
Therefore, the prior art is subject to further improvement.
Disclosure of Invention
In view of the defects in the prior art, the invention aims to provide an LED display back plate and a massive transfer method and a repairing method thereof, and solves the problems that the existing massive transfer technology has complex binding steps, strict requirements on metal flux welding process, materials and equipment, risks of insufficient solder, short circuit and the like in the manufacturing process, is bound to be permanent and unrepairable, damages to an LED chip can only be removed by laser, products are easily thermally damaged by a bottom layer circuit and adjacent LED chips for more times, and the yield of the whole LED panel is influenced.
In a first aspect, the present invention provides an LED display backplane comprising: a back plate; a first backplane electrode and a second backplane electrode disposed on the backplane; a first groove and a second groove disposed on the backplate and between the first backplate electrode and the second backplate electrode; a first piezoelectric electrode disposed in the first recess and a second piezoelectric electrode disposed in the second recess; the piezoelectric crystal is fixed on the back plate and is in sliding contact with the first piezoelectric electrode and the second piezoelectric electrode; wherein the piezoelectric crystal contracts in a direction parallel to the backplate when in an energized state.
When the LED display back plate is used for binding the LED chip, the piezoelectric crystal is electrified, the piezoelectric crystal contracts in the direction parallel to the back plate under the action of an electric field, the LED chip is placed on the piezoelectric crystal and stops electrifying the piezoelectric crystal, and the piezoelectric crystal recovers to the width before electrification, so that the LED chip and the back plate are quickly bound; when LED shows the backplate and carries out LED chip and unbind, through carrying out circular telegram to piezoelectric crystal, piezoelectric crystal contracts along with backplate parallel direction under the electric field effect, produce the clearance between piezoelectric crystal and the LED chip, can take off the LED chip from the backplate through huge transfer head or use air current, thereby realize binding fast and unbinding of LED chip, avoid the adhesive, the fixed processes such as pre-cure and metal bonding, avoid high energy laser to the circuit, the influence of neighbouring chip, can realize LED chip position counterpoint adjustment.
Optionally, a first piezoelectric insulating layer is disposed on the first side surface of the piezoelectric crystal, and a second piezoelectric insulating layer is disposed on the second side surface of the piezoelectric crystal; the first side surface is a surface of the piezoelectric crystal facing the first back plate electrode, and the second side surface is a surface of the piezoelectric crystal facing the second back plate electrode.
According to the LED display backboard, the first piezoelectric insulating layer and the second piezoelectric insulating layer are arranged on the first side face and the second side face of the piezoelectric crystal, so that the two sides of the piezoelectric crystal are insulated from the LED chip to be transferred.
Optionally, the sum of the width of the piezoelectric crystal in the power-off state, the width of the first piezoelectric insulating layer, and the width of the second piezoelectric insulating layer is equal to the distance between the two electrodes of the LED chip to be transferred.
When the piezoelectric crystal of the LED display backboard is in a power-off state, the gap between the LED chip to be transferred and the piezoelectric crystal is zero, and the LED chip bound on the backboard is prevented from loosening and affecting the working performance of the LED display backboard.
Optionally, the height of the first backplane electrode is equal to the height of the second backplane electrode.
Optionally, the depth of the first groove is equal to the height of the first piezoelectric electrode; the second groove depth is equal to the second piezoelectric electrode height.
Optionally, the height of the piezoelectric crystal is greater than the height of the first backboard electrode, and the height of the piezoelectric crystal is less than or equal to the sum of the height of the electrode of the LED chip to be transferred and the height of the first backboard electrode.
In the LED display back plate, after the LED chip to be transferred is transferred to the back plate, two electrodes of the LED chip to be transferred are clamped on the piezoelectric crystal and are in contact with the first back plate electrode and the second back plate electrode.
Optionally, edges of the first piezoelectric electrode and the second piezoelectric electrode do not exceed edges of the piezoelectric crystal after contraction in the power-on state.
In a second aspect, based on the same inventive concept, the present invention further provides a bulk transfer method, where the bulk transfer method is applied to the LED display backplane, and the method includes:
electrifying the first piezoelectric electrode and the second piezoelectric electrode to enable the width of the piezoelectric crystal to be smaller than the distance between the two electrodes of the LED chip to be transferred;
transferring the LED chip to be transferred to the piezoelectric crystal through a massive transfer head, so that two electrodes of the LED chip to be transferred are respectively contacted with the first back plate electrode and the second back plate electrode;
Releasing the voltage applied to the first piezoelectric electrode and the second piezoelectric electrode, and enabling the width of the piezoelectric crystal to be restored to be equal to the distance between the two electrodes of the LED chip to be transferred.
According to the massive transfer method, the rapid transfer of the LED chip can be realized by switching on and off the piezoelectric crystal, the fixing processes of an adhesive, pre-curing, metal welding and the like are eliminated, and the position alignment adjustment of the LED chip can be realized.
In a third aspect, based on the same inventive concept, the present invention further provides a method for repairing an LED display backplane, where the LED display backplane transfers LED chips by using the bulk transfer method, and the method includes:
electrifying the first piezoelectric electrode and the second piezoelectric electrode on the position of the damaged LED chip to shorten the width of the piezoelectric crystal to be smaller than the distance between the two electrodes of the damaged LED chip;
taking the damaged LED chip off the back plate through a massive transfer head, and placing a qualified LED chip at the position of the damaged LED chip;
releasing the voltage applied to the first piezoelectric electrode and the second piezoelectric electrode to restore the width of the piezoelectric crystal to be equal to the distance between the two electrodes of the qualified LED chip.
According to the LED display back plate repairing method, the LED chips can be quickly bound and unbound through the on-off electricity of the piezoelectric crystals, the fixing processes such as adhesive, pre-curing and metal welding are eliminated, high-energy laser irradiation is eliminated in the LED chip repairing process, the influence of high-energy laser on a circuit and adjacent chips is avoided, and the LED chip position alignment adjustment can be realized.
Optionally, the step of energizing the first piezoelectric electrode and the second piezoelectric electrode at the position of damaging the LED chip further comprises: and detecting the working performance of the LED chip in a power-on state, and determining the position of the damaged LED chip according to the working performance.
The LED display back plate and the huge transfer method and the repair method thereof have the advantages that the rapid binding and unbinding of the LED chips can be realized by the on-off power of the piezoelectric crystal, the fixing processes of an adhesive, pre-curing, metal welding and the like are eliminated, the high-energy laser irradiation is avoided in the LED chip repair process, the influence of the high-energy laser on a circuit and an adjacent LED chip is avoided, and the LED chip position alignment adjustment can be realized.
Drawings
Fig. 1 is a schematic structural diagram of an LED display backplane according to a first embodiment of the present invention;
Fig. 2 is a schematic structural diagram of a piezoelectric crystal in an LED display backplane according to a first embodiment of the present invention in a power-on state;
fig. 3 is a schematic structural diagram of a piezoelectric crystal in an LED display backplane according to a first embodiment of the present invention in a power-off state;
FIG. 4 is a flowchart of a bulk transfer method according to a second embodiment of the present invention;
FIG. 5 is a schematic process diagram of a bulk transfer method according to a second embodiment of the present invention;
fig. 6 is a flowchart of a method for repairing an LED display backplane according to a third embodiment of the present invention;
fig. 7 is a schematic process diagram of a repair method for an LED display backplane according to a third embodiment of the present disclosure.
Description of reference numerals:
11-a back plate; 12-a first backplane electrode; 13-a second backplane electrode; 14-a first piezoelectric electrode; 15-a second piezoelectric electrode; 16-a piezoelectric crystal; 17-a first piezoelectric insulating layer; 18-a second piezoelectric insulating layer; 2-LED chips to be transferred; 21-damage of the LED chip; 22-qualified LED chip.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
The existing mass transfer technology has the following problems that on one hand, the binding step is complex, the requirements on the process, materials and equipment of the metal flux welding process are strict, and the risk of insufficient soldering, short circuit and the like exists in the manufacturing process. On the other hand, the binding is permanent and not repairable, the damaged LED chip can only be removed by laser, the bottom layer circuit and the adjacent LED chip are easily thermally damaged, products are subjected to more points, and the yield of the whole LED panel is influenced.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
Example one
Referring to fig. 1, an embodiment of the present invention provides an LED display backplane, including: a back plate 11; a first back plate electrode 12 and a second back plate electrode 13 disposed on the back plate 11; a first and a second recess arranged on the back plate 11 and between the first and the second back plate electrode 12, 13; a first piezoelectric electrode 14 disposed in the first recess and a second piezoelectric electrode 15 disposed in the second recess; a piezoelectric crystal 16 fixed on the back plate 11 and in sliding contact with the first piezoelectric electrode 14 and the second piezoelectric electrode 15; wherein the piezoelectric crystal 16 contracts in a direction parallel to the back plate 11 in an energized state. In the specific use process, when the LED display back plate needs to be subjected to mass transfer, the piezoelectric crystal 16 is electrified, the piezoelectric crystal 16 contracts in the direction parallel to the back plate 11 under the action of an electric field, the LED chip 2 to be transferred is placed on the piezoelectric crystal 16, the electrification of the piezoelectric crystal 16 is stopped, and the piezoelectric crystal 16 is restored to the width before electrification, so that the mass transfer of the LED chip is realized. Similarly, when the damaged LED chip on the LED display back plate needs to be repaired, the piezoelectric crystal 16 is electrified, and a gap is generated between the piezoelectric crystal 16 and the damaged LED chip, so that the damaged LED chip can be taken down quickly, and the qualified LED chip is placed at the position of the damaged LED chip. According to the invention, the rapid binding and unbinding of the LED chip can be realized by switching on and off the piezoelectric crystal 16, the fixing processes of an adhesive, pre-curing, metal welding and the like are eliminated, high-energy laser irradiation is eliminated in the LED chip repairing process, the influence of high-energy laser on a circuit and an adjacent LED chip is avoided, and the position alignment adjustment of the LED chip can be realized.
In one embodiment, the piezoelectric crystal 16 is bonded to the back plate 11 by glue, a first piezoelectric insulating layer 17 is disposed on a first side of the piezoelectric crystal 16, and a second piezoelectric insulating layer 18 is disposed on a second side of the piezoelectric crystal 16; the first side surface is a surface of the piezoelectric crystal 16 facing the first back plate electrode 12, and the second side surface is a surface of the piezoelectric crystal 16 facing the second back plate electrode 13. And the height of the first piezoelectric insulating layer 17 and the height of the second piezoelectric insulating layer 18 are equal to the height of the piezoelectric crystal 16. The first piezoelectric insulating layer 17 and the second piezoelectric insulating layer 18 are respectively arranged on the first side face and the second side face of the piezoelectric crystal 16, so that the piezoelectric crystal 16 is insulated from the electrode of the LED chip 2 to be transferred.
In specific implementation, as shown in fig. 2 and fig. 3, when the piezoelectric crystal 16 is in an energized state, the piezoelectric crystal 16 contracts in the direction of the electric field, that is, the piezoelectric crystal contracts in the direction parallel to the back plate 11, the width of the contraction deformation is controlled by the current intensity, the current intensity increases, the contraction width of the piezoelectric crystal 16 increases, and at this time, the width of the piezoelectric crystal 16 is smaller than the distance between the two electrodes of the LED chip 2 to be transferred, so that the LED chip can be transferred. When the piezoelectric crystal 16 is in a power-off state, the length of the piezoelectric crystal 16 is recovered to the length before power-on, and the gap between the LED chip and the piezoelectric crystal 16 is zero, so that the LED chip and the backboard are bound.
In a specific embodiment, the sum of the width of the piezoelectric crystal 16 in the power-off state, the width of the first piezoelectric insulating layer 17 and the width of the second piezoelectric insulating layer 18 is equal to the spacing between the two electrodes of the LED chip 2 to be transferred. As shown in fig. 1, assuming that the sum of the width of the piezoelectric crystal 16 in the power-off state, the width of the first piezoelectric insulating layer 17, and the width of the second piezoelectric insulating layer 18 is a, and the pitch between the two electrodes of the LED chip 2 to be transferred is B, a is equal to B. Through setting up the width of piezoelectric crystal 16 under the outage state, the width of first piezoelectric insulation layer 17 and the width sum of second piezoelectric insulation layer 18 into the interval between two electrodes of waiting to shift LED chip 2 for piezoelectric crystal 16 is under the outage state, and two electrodes of waiting to shift LED chip 2 just in time can the block between piezoelectric crystal 16, first piezoelectric insulation layer 17 and second piezoelectric insulation layer 18, binds the LED chip on backplate 11 after, the not hard up problem of LED chip can not appear.
In specific implementation, after the LED chip 2 to be transferred is bound on the back plate 11, two electrodes of the LED chip to be transferred are respectively in contact with the first back plate electrode 12 and the second back plate electrode 13, and in order to horizontally fix the LED chip 2 to be transferred on the back plate 11, the heights of the first back plate electrode 12 and the second back plate electrode 13 are equal.
In a specific embodiment, after the first groove has a depth equal to the height of the first piezoelectric electrode 14, and the second groove has a depth equal to the height of the second piezoelectric electrode 15, and the first piezoelectric electrode 14 and the second piezoelectric electrode 15 are respectively disposed in the first groove and the second groove, the upper surfaces of the first piezoelectric electrode 14 and the second piezoelectric electrode 15 just coincide with the upper surface of the backplate 11, so that the lower surface of the piezoelectric crystal 16 can be completely attached to the upper surfaces of the first piezoelectric electrode 14, the second piezoelectric electrode 15 and the backplate 11.
In a specific embodiment, the height of the piezoelectric crystal 16 is greater than the height of the first back plate electrode 12, and the height of the piezoelectric crystal 16 is less than or equal to the sum of the height of the electrode of the LED chip 2 to be transferred and the height of the first back plate electrode 12, and similarly, the height of the piezoelectric crystal 16 is greater than the height of the second back plate electrode 13, and the height of the piezoelectric crystal 16 is less than or equal to the sum of the height of the electrode of the LED chip 2 to be transferred and the height of the second back plate electrode 13. After the LED chip 2 to be transferred is bound on the back plate 11, because the height of the piezoelectric crystal 16 is greater than the heights of the first back plate electrode 12 and the second back plate electrode 13, and the height of the piezoelectric crystal 16 is less than or equal to the sum of the height of the electrode of the LED chip 2 to be transferred and the height of the first back plate electrode 12, and the height of the electrode of the LED chip 2 to be transferred and the height of the second back plate electrode 13, the LED chip 2 to be transferred is just clamped on the piezoelectric crystal 16, and the two electrodes of the LED chip 2 to be transferred are respectively in contact with the first back plate electrode 12 and the second back plate electrode 13.
In a specific embodiment, the piezoelectric crystal 16 will contract in a direction parallel to the back plate 11 in the power-on state, and in order to make the left and right edges of the first piezoelectric electrode 14 and the second piezoelectric electrode 15 not exceed the left and right edges of the piezoelectric crystal 16, the left and right edges of the first piezoelectric electrode 14 and the second piezoelectric electrode 15 are not arranged to exceed the left and right edges of the contracted piezoelectric crystal 16 in this embodiment.
Example two
As shown in fig. 4 and fig. 5, a second embodiment of the present invention provides a bulk transfer method, which is applied to the LED display backplane, and the bulk transfer method includes:
s1, electrifying the first piezoelectric electrode and the second piezoelectric electrode to enable the width of the piezoelectric crystal to be smaller than the distance between the two electrodes of the LED chip to be transferred;
s2, transferring the LED chip to be transferred to the piezoelectric crystal through a massive transfer head, and enabling two electrodes of the LED chip to be transferred to be respectively contacted with the first back plate electrode and the second back plate electrode;
and S3, releasing the voltage applied to the first piezoelectric electrode and the second piezoelectric electrode, and enabling the width of the piezoelectric crystal to be restored to be equal to the distance between the two electrodes of the LED chip to be transferred.
In specific implementation, when the LED display backplane is subjected to LED chip bulk transfer in this embodiment, the first piezoelectric electrode 14 and the second piezoelectric electrode 15 are first powered on, so that the width of the piezoelectric crystal 16 is smaller than the distance between the two electrodes of the LED chip 2 to be transferred. Specifically, the amount of contraction of the piezoelectric crystal 16 may be controlled by the intensity of the electric current applied between the first piezoelectric electrode 14 and the second piezoelectric electrode 15, the greater the intensity of the electric current, the greater the amount of contraction of the piezoelectric crystal. The LED chip 2 to be transferred is then transferred onto the piezoelectric crystal 16 by a bulk transfer head, so that the two electrodes of the LED chip 2 to be transferred are in contact with the first back plate electrode 12 and the second back plate electrode 13, respectively. And finally, releasing the voltage between the first piezoelectric electrode 14 and the second piezoelectric electrode 15, so that the width of the piezoelectric crystal 16 is restored to the distance between the two electrodes of the LED chip 2 to be transferred, and the LED chip 2 to be transferred is transferred to the LED display backboard. According to the invention, the rapid transfer of the LED chip can be realized by switching on and off the piezoelectric crystal, and the fixing processes of an adhesive, pre-curing, metal welding and the like are eliminated.
EXAMPLE III
As shown in fig. 6 and fig. 7, a third embodiment of the present invention provides a method for repairing an LED display backplane, where the LED display backplane transfers LED chips by using the bulk transfer method described above, and the method includes:
r1, electrifying the first piezoelectric electrode and the second piezoelectric electrode on the position of the damaged LED chip, and shortening the width of the piezoelectric crystal to be smaller than the distance between the two electrodes of the damaged LED chip;
r2, taking the damaged LED chip off the backboard through a huge transfer head, and placing a qualified LED chip at the position of the damaged LED chip;
r3, releasing the voltage applied to the first piezoelectric electrode and the second piezoelectric electrode, and enabling the width of the piezoelectric crystal to be restored to be equal to the distance between the two electrodes of the qualified LED chip.
In specific implementation, when the damaged LED chip 21 on the LED display backplane needs to be repaired, the first piezoelectric electrode 14 and the second piezoelectric electrode 15 at the position of the damaged LED chip 21 are first powered on, so that the width of the piezoelectric crystal 16 is shortened to be smaller than the distance between the two electrodes of the damaged LED chip 21. The damaged LED chip 21 is then removed from the back sheet 11 by a bulk transfer head, and a good LED chip 22 is placed at the damaged LED chip 21. And finally, releasing the voltage applied by the first piezoelectric electrode 14 and the second piezoelectric electrode 15, so that the width of the piezoelectric crystal 16 is restored to be equal to the distance between the two electrodes of the qualified LED chip 22, and repairing the damaged LED chip 21 on the LED display backboard. According to the invention, the rapid binding and unbinding of the LED chip can be realized by switching on and off the piezoelectric crystal 16, the fixing processes of an adhesive, pre-curing, metal welding and the like are eliminated, high-energy laser irradiation is eliminated in the LED chip repairing process, the influence of high-energy laser on a circuit and an adjacent chip is avoided, and the position alignment adjustment of the LED chip can be realized.
In a specific embodiment, the step R1 further includes, before the step of:
r0, detecting the working state of the LED chip in the power-on state, and determining the position of the damaged LED chip according to the working state.
During specific implementation, after the massive transfer of the LED display back plate is finished, the working performance of the LED chip in the power-on state needs to be detected through detection equipment, whether the working performance of the LED chip in the power-on state meets the preset requirement is judged, if not, the LED chip is judged to be a damaged LED chip, and the position of the damaged LED chip is recorded, so that the LED display back plate can be repaired in the subsequent steps.
In summary, the present invention provides an LED display backplane, a bulk transfer method and a repair method thereof, including: a back plate; a first backplane electrode and a second backplane electrode disposed on the backplane; a first groove and a second groove disposed on the backplate and between the first backplate electrode and the second backplate electrode; a first piezoelectric electrode disposed in the first recess and a second piezoelectric electrode disposed in the second recess; the piezoelectric crystal is fixed on the back plate and is in sliding contact with the first piezoelectric electrode and the second piezoelectric electrode; wherein the piezoelectric crystal contracts in a direction parallel to the backplate when in an energized state. This application is bound and is separated through can realizing the quick binding of LED chip to piezoelectric crystal break-make electric energy and bind, avoids fixed processes such as adhesive, precuring and metal bonding, removes high energy laser from and shines at LED chip repair in-process, avoids high energy laser to circuit, adjacent LED chip's influence, can realize LED chip position alignment adjustment.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. An LED display backplane, comprising:
a back plate;
a first backplane electrode and a second backplane electrode disposed on the backplane; a first groove and a second groove disposed on the backplate and between the first backplate electrode and the second backplate electrode; a first piezoelectric electrode disposed in the first recess and a second piezoelectric electrode disposed in the second recess; the piezoelectric crystal is fixed on the back plate and is in sliding contact with the first piezoelectric electrode and the second piezoelectric electrode; the piezoelectric crystal contracts in the direction parallel to the backboard in the electrified state, and the width of the piezoelectric crystal is smaller than the distance between two electrodes of the LED chip to be transferred;
when the piezoelectric crystal is in a power-off state, the gap between the LED chip to be transferred and the piezoelectric crystal is zero.
2. The LED display backplane of claim 1, wherein a first piezoelectric insulating layer is disposed on a first side of the piezoelectric crystal and a second piezoelectric insulating layer is disposed on a second side of the piezoelectric crystal; the first side surface is a surface of the piezoelectric crystal facing the first back plate electrode, and the second side surface is a surface of the piezoelectric crystal facing the second back plate electrode.
3. The LED display backplane according to claim 2, wherein the sum of the width of the piezoelectric crystal in the power-off state, the width of the first piezoelectric insulating layer and the width of the second piezoelectric insulating layer is equal to the pitch between the two electrodes of the LED chip to be transferred.
4. The LED display backplane according to claim 3, wherein the height of the first backplane electrode is equal to the height of the second backplane electrode.
5. The LED display backplane according to claim 4, wherein a depth of the first groove is equal to the first piezoelectric electrode height; the second groove depth is equal to the second piezoelectric electrode height.
6. The LED display backplane according to claim 5, wherein the height of the piezo-electric crystal is greater than the height of the first backplane electrode, and the height of the piezo-electric crystal is less than or equal to the sum of the height of the electrode of the LED chip to be transferred and the height of the first backplane electrode.
7. The LED display backplane according to claim 4, wherein edges of the first piezoelectric electrode and the second piezoelectric electrode do not exceed edges of the piezoelectric crystal after contraction in the energized state.
8. A bulk transfer method applied to the LED display back plate according to any one of claims 1 to 7, comprising:
electrifying the first piezoelectric electrode and the second piezoelectric electrode to enable the width of the piezoelectric crystal to be smaller than the distance between the two electrodes of the LED chip to be transferred;
transferring the LED chip to be transferred onto the piezoelectric crystal through a huge transfer head, so that two electrodes of the LED chip to be transferred are respectively contacted with the first back plate electrode and the second back plate electrode;
releasing the voltage applied to the first piezoelectric electrode and the second piezoelectric electrode, and enabling the width of the piezoelectric crystal to be restored to be equal to the distance between the two electrodes of the LED chip to be transferred.
9. An LED display backplane repair method, the LED display backplane using the bulk transfer method of claim 8 for LED chip transfer, comprising:
electrifying the first piezoelectric electrode and the second piezoelectric electrode on the position of the damaged LED chip to shorten the width of the piezoelectric crystal to be smaller than the distance between the two electrodes of the damaged LED chip;
taking the damaged LED chip off the back plate through a huge transfer head, and placing a qualified LED chip at the position of the damaged LED chip;
Releasing the voltage applied to the first piezoelectric electrode and the second piezoelectric electrode to restore the width of the piezoelectric crystal to be equal to the distance between the two electrodes of the qualified LED chip.
10. The LED display backplane repair method of claim 9, wherein the step of energizing the first piezoelectric electrode and the second piezoelectric electrode at the location of the damaged LED chip is preceded by the step of:
and detecting the working performance of the LED chip in a power-on state, and determining the position of the damaged LED chip according to the working performance.
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| CN110970456A (en) * | 2018-09-27 | 2020-04-07 | 昆山工研院新型平板显示技术中心有限公司 | Micro-LED chip, preparation method thereof and display device |
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| CN109920754B (en) * | 2019-03-28 | 2021-01-12 | 京东方科技集团股份有限公司 | Mass transfer head, transfer equipment and transfer method of light-emitting diode chip |
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