CN114496993A - Chip detection board, chip transfer method, display back board and display device - Google Patents
Chip detection board, chip transfer method, display back board and display device Download PDFInfo
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- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract
The invention relates to a chip detection plate, a chip transfer method, a display back plate and a display device. The chip detection board comprises a substrate main body; the first conducting layer is arranged on one side of the substrate main body and comprises a first height area and a second height area, the first height area is relatively close to the substrate main body, and the second height area is relatively far away from the substrate main body; the piezoelectric material layer is arranged on a part of area of the first conducting layer; the second conducting layer is at least arranged on one side, far away from the substrate main body, of the piezoelectric material layer, the second conducting layer is electrically connected with the second side of the piezoelectric material layer, and the second side is the side opposite to the first side. Can be through the applied pressure to piezoelectric material layer, the luminous chip is driven to the production electric energy, and then detects the luminous condition of luminous chip, need not to wait to reach luminous backplate preparation and accomplish and carry out the circular telegram and detect, is favorable to in time discovering the dead pixel on the luminous backplate in some implementation processes, also does benefit to subsequent maintenance.
Description
Technical Field
The invention relates to the field of manufacturing of light-emitting chips, in particular to a chip detection plate, a chip transfer method, a display back plate and a display device.
Background
The Micro LED (Light Emitting Diode) display has the advantages of good stability, long service life and operation temperature, and simultaneously has the advantages of low power consumption, color saturation, high reaction speed, high contrast and the like of the LED, thereby having great application prospect.
In the manufacturing process of display devices including, but not limited to, Micro Light Emitting Diode (Micro Light Emitting Diode) displays, it is necessary to transfer Light Emitting chips such as Micro LED chips onto a display panel. However, when any light emitting chip is damaged or has poor contact, it may cause bad spots on the display panel, which may affect the imaging. However, the broken point light emitting chip needs to be electrically inspected after the light emitting chip is bonded, which results in a complicated maintenance and replacement process.
Therefore, how to simplify the detection of the bad point light emitting chip is an urgent problem to be solved.
Disclosure of Invention
In view of the above-mentioned deficiencies of the related art, an object of the present application is to provide a chip detecting board, a chip transferring method, a display backplane and a display device, which are used to solve the problem that the process of repairing and replacing a defective light emitting chip is complicated because the power-on inspection can be performed only after the light emitting chip is bonded.
A chip detection board comprising:
a substrate main body;
the first conducting layer is arranged on one side of the substrate main body and comprises a first height area and a second height area, the first height area is relatively close to the substrate main body, and the second height area is relatively far away from the substrate main body;
the piezoelectric material layer is arranged on a partial area of the first conducting layer, the piezoelectric material layer is arranged on one side, away from the substrate main body, of the first conducting layer, the first side of the piezoelectric material layer is electrically connected with the first height area of the first conducting layer, when the piezoelectric material layer deforms in the direction perpendicular to the substrate main body, voltage is generated between the first side and the second side, and the second side is the side opposite to the first side;
the second conducting layer is at least arranged on one side, far away from the substrate main body, of the piezoelectric material layer, and the second conducting layer is electrically connected with the second side of the piezoelectric material layer.
The chip detection board can generate electric energy to drive the light-emitting chip by applying pressure on the piezoelectric material layer through the piezoelectric material layer and the first conductive layer and the second conductive layer matched with the piezoelectric material layer, so that the light-emitting condition of the light-emitting chip is detected; in some implementation processes, even if the light-emitting backboard is not completely manufactured, only pressure needs to be applied to temporarily drive and light the light-emitting chips arranged on the light-emitting backboard, so that the purpose of detection is achieved, the power-on detection is not needed to be carried out when the light-emitting backboard is manufactured, the defect points on the light-emitting backboard can be found in time, and the follow-up maintenance is facilitated.
Based on the same inventive concept, the application also provides a chip transfer method, which comprises the following steps:
providing a chip detection board, wherein the chip detection board is the chip detection board;
providing a light-emitting back plate, wherein the light-emitting back plate comprises a third conducting layer and a fourth conducting layer which are arranged on a first surface, and a fifth conducting layer and a sixth conducting layer which are arranged on a second surface, the third conducting layer and the fourth conducting layer are corresponding to electrodes of a light-emitting chip to be transferred and are used for being electrically connected with the electrodes of the light-emitting chip, the fifth conducting layer is electrically connected with the third conducting layer, and the sixth conducting layer is electrically connected with the fourth conducting layer;
the light-emitting back plate is arranged on the chip detection plate, the fifth conducting layer is electrically connected with the second height area of the first conducting layer, and the sixth conducting layer is electrically connected with the second conducting layer;
and transferring the light-emitting chip to the light-emitting backboard, and applying pressure to the light-emitting backboard to enable the piezoelectric material layer to generate current enough to drive the light-emitting chip to work before the bonding material of the light-emitting chip is completely solidified.
According to the chip transfer method, the chip detection board is utilized, the light-emitting backboard which can be matched with the chip detection board to directly form a conductive path of the light-emitting chip is adopted, power supply driving of the light-emitting chip can be achieved in the process of transferring the light-emitting chip, the dead pixel condition of the light-emitting chip arranged on the light-emitting backboard is detected in the process of transferring the light-emitting chip, timely replacement and maintenance are facilitated in some implementation processes, maintenance can be conducted before bonding materials of the light-emitting chip are completely solidified, the step of removing bonding is avoided, and maintenance complexity and difficulty are reduced.
Optionally, the chip detection board includes a plurality of piezoelectric material layers arranged in an array, and a distance between every two adjacent piezoelectric material layers and every two adjacent second height regions in a line direction of two electrodes of the light emitting chip is equal to a distance between every three adjacent light emitting chips in the line direction of the two electrodes;
before the light emitting chip is transferred to the light emitting back plate, the method comprises the following steps:
and transferring the light-emitting chips to a transfer substrate, and arranging the positions of the positive and negative electrodes of each adjacent light-emitting chip in the connecting line direction of the two electrodes of the light-emitting chips in a reversed manner.
The electrodes of the light emitting chips are sequentially and alternately arranged, so that the second conductive layer, the second height area of the first conductive layer, the fifth conductive layer and the sixth conductive layer can be shared by the two light emitting chips, at least one of the piezoelectric material layer, the second conductive layer, the second height area of the first conductive layer, the fifth conductive layer and the sixth conductive layer can be formed into a larger size, the sum of the number required by various structures on the chip detection board is reduced in some implementation processes, the manufacturing difficulty and the requirement on precision of the chip detection board are lower, and the yield and the cost control are facilitated.
Based on the same inventive concept, the present application also provides a display backplane, comprising:
a light emitting chip;
the light-emitting chip further comprises a third conducting layer and a fourth conducting layer which are arranged on the first surface, and a fifth conducting layer and a sixth conducting layer which are arranged on the second surface, wherein the third conducting layer and the fourth conducting layer are electrically connected with the electrodes of the light-emitting chip, the fifth conducting layer is electrically connected with the third conducting layer, and the sixth conducting layer is electrically connected with the fourth conducting layer;
the light emitting chips are transferred onto the display backplane by the chip transfer method as described above.
The display back plate can detect and maintain the defective points in the chip transferring process, and is high in yield and good in quality.
Based on the same inventive concept, the application also provides a display device, which comprises a frame and a display back plate, wherein the display back plate is fixed on the frame, and the display back plate is the display back plate.
The display device is high in yield and good in quality.
Drawings
Fig. 1 is a first schematic structural diagram of a chip detection board according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a chip detection board according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a chip detection board according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a chip detection board according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a chip detection board according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a basic flow chart of a chip transfer method according to another alternative embodiment of the present invention;
fig. 7 is a schematic structural diagram of a light-emitting backplane according to another alternative embodiment of the present invention;
fig. 8 is a schematic view illustrating a light-emitting back plate disposed on a chip detection plate according to another alternative embodiment of the present invention;
fig. 9 is a schematic diagram of a light emitting chip transferred to a light emitting backplane according to another alternative embodiment of the present invention;
fig. 10 is a schematic view illustrating a chip detection board and a light-emitting back board according to another alternative embodiment of the present invention;
fig. 11 is a first schematic layout diagram of a light emitting chip according to another alternative embodiment of the present invention;
fig. 12 is a schematic top view of the chip detection board corresponding to fig. 11;
fig. 13 is a second schematic layout view of a light emitting chip according to another alternative embodiment of the present invention;
fig. 14 is a schematic top view of the chip detection board corresponding to fig. 13;
FIG. 15 is a schematic flow chart illustrating a detailed process of a part of the chip transfer method according to another alternative embodiment of the present invention;
fig. 16 is a schematic view of a light-transmitting substrate provided with light-emitting chips according to another alternative embodiment of the present invention;
fig. 17 is a schematic view illustrating a light emitting chip being transferred to a light emitting backplane according to another alternative embodiment of the present invention;
FIG. 18 is a schematic flowchart of a portion of a chip transfer method according to another alternative embodiment of the present invention;
description of reference numerals:
1-a substrate body; 21-a first conductive layer; 211-a first height zone; 212-a second height zone; 213-a transition region; 214-a head block; 22-a layer of piezoelectric material; 221-an electrode layer disposed on a first side of the piezoelectric material layer; 222-an electrode layer disposed on a second side of the layer of piezoelectric material; 23-a second conductive layer; 3-a light-emitting backplane; 31-a third conductive layer; 32-a fourth conductive layer; 33-a fifth conductive layer; 34-a sixth conductive layer; 35-conductive vias; 4-a light emitting chip; 401 — a first light emitting chip; 402-a second light emitting chip; 403-a third light emitting chip; 41-positive electrode; 42-negative electrode; 43-a bonding material; 5-a light-transmissive substrate; d1 — distance of each two adjacent piezoelectric material layers in the direction of the line connecting the two electrodes of the light emitting chip; d 2-distance of every three adjacent light emitting chips in the direction of the line connecting the two electrodes; f-pressure; l-the direction of the line connecting the electrodes.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In the related art, the defective pixel detection of the light emitting chip can be performed only by electrifying the light emitting backboard after the light emitting chip is bonded, which results in a complicated replacement and maintenance process. Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
Example (b):
the present embodiment provides a chip test board, which includes a substrate main body 1, a first conductive layer 21, a piezoelectric material layer 22, and a second conductive layer 23, as shown in fig. 1. The first conductive layer 21 is disposed on one side of the substrate body 1, the first conductive layer 21 includes a first height area 211 and a second height area 212, the first height area 211 is relatively close to the substrate body 1, and the second height area 212 is relatively far away from the substrate body 1. The piezoelectric material layer 22 is disposed on a partial region of the first conductive layer 21, the piezoelectric material layer 22 is disposed on a side of the first conductive layer 21 away from the substrate body 1, a first side of the piezoelectric material layer 22 is electrically connected to the first height region 211 of the first conductive layer 21, and when the piezoelectric material layer 22 deforms in a direction perpendicular to the substrate body 1, a voltage is generated between the first side and the second side. The second conductive layer 23 is disposed on a side of the piezoelectric material layer 22 away from the substrate body 1, and the second conductive layer 23 is electrically connected to a second side of the piezoelectric material layer 22, where the second side is opposite to the first side.
The first conductive layer and the second conductive layer include, but are not limited to, conductive lines or conductive structures formed by various conductive materials, and may be conductive metals, for example, in an example, the material of the first conductive layer and/or the second conductive layer may include, but is not limited to, at least one of Cr, Ni, Al, Ti, Au, Pt, W, Pb, Rh, Sn, Cu, and Ag.
The piezoelectric material layer includes a crystal material that generates a voltage across two end surfaces when subjected to a pressure, the two end surfaces of the piezoelectric material layer of this embodiment are arranged along a thickness direction of the substrate main body, that is, a deformation direction of the piezoelectric material layer generating a piezoelectric effect is perpendicular to a plane where the substrate main body is located, and the two end surfaces of the piezoelectric material layer in this embodiment are the first side and the second side, respectively.
The first conductive layer and the second conductive layer are electrically connected to the first side and the second side of the piezoelectric material layer, respectively, and when the piezoelectric material layer generates a voltage, the first conductive layer and the second conductive layer also have a corresponding voltage thereon.
In the chip detection board of the present embodiment, the first conductive layer and the second conductive layer can be used to form electrical connections with two electrodes of the light emitting chip, respectively. After the first conductive layer and the second conductive layer are electrically connected with the light-emitting chip, a loop is formed, and through pressure applied to the piezoelectric material layer, current can be formed to drive the light-emitting chip to work, namely, light is emitted. It can be understood that, in practical applications, the correspondence relationship between the two electrodes of the light emitting chip and the first conductive layer and the second conductive layer is determined according to the direction of the voltage formed by the positive electrode and the negative electrode and the piezoelectric material layer, that is, the positive electrode of the light emitting chip is electrically connected to the conductive layer with the higher voltage after being pressed by the piezoelectric material layer, and the negative electrode is electrically connected to the conductive layer with the lower voltage.
The chip detection board of the embodiment can make two electrodes of the light-emitting chip respectively electrically connected with the first conducting layer and the second conducting layer, and apply pressure to the piezoelectric material layer, so that the piezoelectric material layer generates voltage to form current to drive the light-emitting chip to work, and whether the light-emitting chip is damaged or not is verified. Meanwhile, when the light-emitting chip is arranged on the light-emitting back plate, whether the light-emitting chip is damaged or not or whether the electric connection between the light-emitting chip and the light-emitting back plate is normal or not can be verified.
For example, generally, the two electrodes of the light emitting chip have substantially the same height or the light emitting chip is disposed on the light emitting back plate, and the light emitting back plate has a flat plate shape. In order to enable the electrode of the light-emitting chip or the corresponding conductive area of the light-emitting back plate to be in better contact with the first conductive layer and the second conductive layer of the chip detection plate, the second height area of the first conductive layer and the second conductive layer can be positioned on the same plane; that is, from the perspective of the example of fig. 1, the second height region 212 is at the same height as the second conductive layer 23.
In some embodiments, the second height region of the first conductive layer comprises any one of:
a cushion block is arranged between the first conductive layer and the substrate main body, and the first conductive layer forms a second height area at the cushion block;
the first conductive layer comprises a conductive plane with equal thickness and a conductive body arranged on a partial area of one side of the conductive plane far away from the substrate main body, and a second height area is formed at the conductive body.
For example, in the example of fig. 1, the chip probe card further includes a pad 214, and the pad 214 may be insulating, but may also be conductive. The second height area 212 is formed by raising the first conductive layer 21 by the pad 214, and the thickness of the pad 214 can be equal to the sum of the thicknesses of the piezoelectric material layer 22 and the first height area 211, so that the second height area 212 and the second conductive layer 23 are in the same plane. The first conductive layer 21 may be a flexible conductive layer, or it may be a flexible conductive layer at least between the piezoelectric material layer 22 and the spacer 214, which part of the flexible conductive layer realizes a transition region 213 of the first height region 211 to the second height region 212 of the first conductive layer 21.
As another example, referring to fig. 2, the chip detection board further includes a pad 214, and the pad 214 raises the first conductive layer 21 to form the second height area 212. The first conductive layer 21 of this example may be a non-flexible conductive layer, the first conductive layer 21 is laid from the piezoelectric material layer 22 to the pad 214 along the surface of the substrate main body 1, and is disposed along the sidewall of the pad 214 to the side surface of the pad 214 away from the substrate main body 1, and the first conductive layer 21 may be a metal sheet, a metal conductive layer formed by depositing a conductive metal on the surfaces of the substrate main body 1 and the pad 214, or the like. The first conductive layer 21 of this example may be disposed against the sidewalls of the spacers 214 without forming a flexible transition region 213 between the first height zones 211 to the second height zones 212.
As shown in fig. 3, the overall configuration of the first conductive layer 21 is similar to the implementation of the above example, but the first conductive layer 21 may be a combination of two parts including the pad 214 and the substrate body 1. One part of the first conductive layer 21 is laid on one side surface of the substrate main body 1, the other part of the first conductive layer 21 is arranged on the surface of the cushion block 214, and when the cushion block 214 is arranged on the substrate main body 1, the substrate main body 1 is connected with the parts of the first conductive layer 21 on the cushion block 214 to form the complete first conductive layer 21.
As in the example shown in fig. 4, the first conductive layer 21 may further include a conductive plane of uniform thickness, which is laid on the substrate body 1, and includes, but is not limited to, a metal sheet, a metal deposition layer, and the like. A conductive pad 214 is disposed on the conductive plane, and the conductive pad 214 serves as the second height area 212 of the first conductive layer 21.
The spacers in the above examples may be provided by means including, but not limited to, bonding, welding, etc. In other embodiments, the spacer may also be formed as an integral structure with the substrate main body, that is, a protruding structure capable of heightening the first conductive layer is directly formed on the substrate main body. The implementation manner of the second height area in the present embodiment is not limited to the above-described manner, and may be any other manner.
In order to better ensure the contact between the electrodes of the light emitting chip and the first conductive layer and the second conductive layer, the first conductive layer and/or the second conductive layer may be made of a material having certain elasticity or ductility. Of course, the pad or the conductor for supporting the second height area of the first conductive layer may also be designed to have a certain elasticity. When the piezoelectric material layer is pressed, a certain deformation is generated, and of course, the degree of the deformation has a certain relation with the specific piezoelectric material in the piezoelectric material layer. The piezoelectric material layer in the present embodiment may use at least one of a piezoelectric crystal material, a piezoelectric ceramic material, and a piezoelectric polymer, but is not limited thereto. By giving a certain elasticity to the electrical connection structure (the first conductive layer and/or the second conductive layer) or the structure (the spacer or the conductor) supporting the electrical connection structure, the electrode of the light emitting chip can maintain a good electrical connection relationship with the first conductive layer and the second conductive layer even when the piezoelectric material layer is deformed by pressure. And in some examples, the first conductive layer has certain elasticity in the second height area, so that the second height area is slightly higher than the second conductive layer, and when the second conductive layer is electrically connected with the corresponding electrode of the chip, the first conductive layer can make good contact with the corresponding conductive area to form electrical connection with the corresponding electrode of the chip. For example, the distance between the second height region and the surface of the substrate body is 0.5 micrometers, 1 micrometer, etc. larger than the distance between the second conductive layer and the surface of the substrate body, and the actual height difference can be determined according to the actual deformation.
It can be understood that, if the two electrodes of the light emitting chip to be detected or the end surfaces of the conductive areas on the light emitting backplane, which are connected to the two electrodes of the light emitting chip, are not in the same plane, the second height area of the first conductive layer of the chip detection board and the second conductive layer may not be in the same plane. The positions of the second height area of the first conductive layer and the second conductive layer are determined according to the actual structure condition of the light-emitting chip or the light-emitting back plate.
The piezoelectric material layer may include electrode layers provided at both end faces, respectively, and a piezoelectric material sandwiched by the two electrode layers. In practical applications, the electrode layer of the piezoelectric material layer may be a part of the first conductive layer and/or the second conductive layer, for example, as in the example of fig. 1, the electrode layer disposed on the first side of the piezoelectric material layer is connected with the flexible conductive sheet to form the first conductive layer, and the electrode layer disposed on the second side of the piezoelectric material layer is directly used as the second conductive layer of the chip detection board. Of course, it is equally feasible to continue to provide other conductive structures, such as conductive strips, on the electrode layer on the second side of the layer of piezoelectric material.
In practical applications, the second height area of the first conductive layer is disposed corresponding to the position of the electrical connection area of the light emitting chip or the light emitting backplane to be detected. In this embodiment, the size and the position of the second conductive layer and the second height area correspond to the positive electrode and the negative electrode on one light emitting chip respectively, that is, the size of the second conductive layer and the second height area, and the interval between the second conductive layer and the second height area may be the same as or substantially the same as the size of the positive electrode and the negative electrode on the light emitting chip, and the interval between the positive electrode and the negative electrode on the light emitting chip.
It should also be noted that the above examples only illustrate a minimum unit for detecting a light emitting chip, and in practical applications, the chip detection board may include a plurality of piezoelectric material layers, and correspondingly, the second height area of the first conductive layer includes a plurality of positions, and the chip detection board may detect a plurality of light emitting chips. The plurality of piezoelectric material layers are arranged in an array, and the number of the first conductive layers on the chip detection board may be the same as the number of the piezoelectric material layers, for example, in the examples of fig. 1 to 4, each piezoelectric material layer 22 corresponds to one first conductive layer 21, and each first conductive layer 21 is used for electrically connecting to a single light emitting chip. In other embodiments, the chip detection plate comprises a plurality of piezoelectric material layers, the piezoelectric material layers are arranged in an array, and each first conductive layer is communicated with the plurality of piezoelectric material layers. For example, as shown in fig. 5, the first conductive layer 21 may be a flexible conductive layer, and in the illustrated direction, the piezoelectric material layers 22 and the spacers 214 are alternately arranged, and the first conductive layer 21 is a whole body and is communicated with all the piezoelectric material layers 22.
The chip detection board of the embodiment can generate electric energy to drive the light emitting chip by applying pressure on the piezoelectric material layer through the piezoelectric material layer and the first conductive layer and the second conductive layer matched with the piezoelectric material layer, so as to detect the light emitting condition of the light emitting chip; in some implementation processes, even if the light-emitting backboard is not completely manufactured, only pressure needs to be applied to temporarily drive and light the light-emitting chips arranged on the light-emitting backboard, so that the purpose of detection is achieved, the power-on detection is not needed to be carried out when the light-emitting backboard is manufactured, the defect points on the light-emitting backboard can be found in time, and the follow-up maintenance is facilitated.
Another alternative embodiment of the invention:
the present embodiment provides a chip transferring method based on the above-mentioned chip detecting board, and the chip transferring method exemplifies a process of detecting a chip by using the above-mentioned chip detecting board. As shown in fig. 6, the chip transfer method of the present embodiment includes:
s101, providing a chip detection board;
the chip detection board is the chip detection board of the above embodiment.
S102, providing a light-emitting back plate;
it should be noted that, as shown in fig. 7 (for easy understanding, the light emitting chip 4 is illustrated in fig. 7 at the same time, but the light emitting chip 4 is not disposed in step S102), the light emitting back plate 3 of the present embodiment includes a third conductive layer 31 and a fourth conductive layer 32 disposed on the first surface, and includes a fifth conductive layer 33 and a sixth conductive layer 34 disposed on the second surface, the third conductive layer 31 and the fourth conductive layer 32 correspond to the electrodes of the light emitting chip 4 to be transferred for electrical connection with the electrodes of the light emitting chip 4, the fifth conductive layer 33 is electrically connected with the third conductive layer 31, and the sixth conductive layer 34 is electrically connected with the fourth conductive layer 32. In practical applications, the third conductive layer 31, the fourth conductive layer 32, the fifth conductive layer 33 and the sixth conductive layer 34 may be in the form of contact electrodes or contact pads.
Illustratively, a plurality of conductive vias 35 are formed on the light-emitting back plate 3 and penetrate through the light-emitting back plate 3 in a direction perpendicular to the light-emitting back plate 3 (or can be understood as a thickness direction), the connection between the third conductive layer 31 and the fifth conductive layer 33 is realized through the conductive vias 35, and similarly, the connection between the fourth conductive layer 32 and the sixth conductive layer 34 is realized through the conductive vias 35.
S103, arranging the light-emitting back plate on a chip detection plate;
as shown in fig. 8, the fifth conductive layer 33 is electrically connected to the second height region 212 of the first conductive layer 21, and the sixth conductive layer 34 is electrically connected to the second conductive layer 23. For example, the light-emitting back plate may be detachably bonded to the chip detection plate, and the bonding may be achieved by a conductive adhesive material, or the light-emitting back plate may be directly placed on the chip detection plate without being fixed to the chip detection plate.
S104, transferring the light-emitting chip to a light-emitting back plate, and applying pressure which is enough to enable the piezoelectric material layer to generate current which is enough to drive the light-emitting chip to work to the light-emitting back plate before the bonding material of the light-emitting chip is completely solidified;
the Light Emitting chip of the present embodiment includes but is not limited to various LED chips such as Micro LED chip, Mini LED (sub millimeter Light Emitting Diode) chip, and the like. The light emitting chip of the present embodiment is in a flip-chip structure, for example, in one example, the Micro LED chip is a flip-chip Micro LED chip, and in another example, the Mini LED chip is in a flip-chip structure. As shown in fig. 9, after the light emitting chip 4 is disposed on the light emitting back plate 3, two electrodes of the light emitting chip 4 are connected to the third conductive layer 31 and the fourth conductive layer 32 on the light emitting back plate 3, respectively, at this time, a loop is formed between the positive electrode and the negative electrode of the light emitting chip 4, and when the piezoelectric material layer 22 generates a voltage, a current is formed on the loop, and the current drives the light emitting chip 4 to operate. It should be noted that the operation of the light emitting chip 4 in this embodiment is not limited to that the light emitting chip 4 reaches a rated operating state, and in some implementation processes, if only detecting whether the light emitting chip 4 can emit light, only the light emitting chip 4 needs to be driven to generate light, and the current generated at this time may be lower than the rated current of the light emitting chip 4.
The chip transfer method of the embodiment can detect whether the light-emitting chip can be normally lighted when the light-emitting chip is arranged on the light-emitting backboard in the transfer process, in addition, the embodiment does not need to wait for the light-emitting chip and the light-emitting backboard to complete bonding, as long as the electric connection between the light-emitting chip and the light-emitting backboard is formed, the light-emitting chip can be electrified and detected in a pressure applying mode, the detection process is convenient and simple, the detection can be completed when the bonding material of the light-emitting chip is not solidified, if a dead spot is found, the light-emitting chip with the dead spot can be easily taken down, and the maintenance process is simplified.
As in the previous example, each piezoelectric material layer may correspond to a single light emitting chip, and the positions of each piezoelectric material layer and the second height region of the first conductive layer respectively correspond to two electrodes of one light emitting chip.
In another example, as shown in fig. 10, the distance d1 between each two adjacent piezoelectric material layers 22 and the distance between each two adjacent second height regions 212 in the line direction of the two electrodes of the light emitting chip in which the plurality of piezoelectric material layers 22 are arrayed are equal to the distance d2 between each three adjacent light emitting chips in the line direction of the two electrodes. Based on the relationship between the chip detection board and the light-emitting chips, the light-emitting chips are transferred to the front of the light-emitting backboard, and the light-emitting chips are transferred to the transfer substrate and the positions of the positive electrode and the negative electrode of each adjacent light-emitting chip in the connecting line direction of the two electrodes of the light-emitting chips are arranged in a reversed manner. For example, in fig. 10, the anode 41 of the first light emitting chip 401 is located at the left side of the drawing direction, the cathode 42 is located at the right side of the drawing direction, the second light emitting chip 402 adjacent to the first light emitting chip 401 is rotated by 180 degrees in a plane parallel to the light emitting back plate with respect to the first light emitting chip 401, the position of the anode 41 of the second light emitting chip 402 is changed to the right side of the drawing direction, and the position of the cathode 42 is changed to the left side of the drawing direction. Similarly, the positions of the anodes and the cathodes of the third light emitting chips 403 adjacent to the second light emitting chip 402 are also reversed with respect to the second light emitting chip 402, and the anode 41 of the third light emitting chip 403 is located on the left side of the drawing direction, the cathode 42 is located on the right side of the drawing direction, and so on, which means that the positions of the anodes and the cathodes of the light emitting chips adjacent to the third light emitting chip 403 in the direction are opposite.
As shown in fig. 11, in the case where each piezoelectric material layer may correspond to a single light emitting chip, the electrodes of the light emitting chips may be arranged in the same order, for example, in the example shown in fig. 11, the positive electrodes 41 of the light emitting chips are all on the left side (with reference to the direction of the drawing) and the negative electrodes 42 are all on the right side. Illustratively, fig. 12 illustrates a schematic top view of a chip sense board corresponding to fig. 11.
In the example shown in fig. 13, the two electrodes of the light emitting chips are connected, and in the light emitting chips in the connecting line direction L of the electrodes (taking the direction shown in fig. 13 as an example, that is, the light emitting chips in the same row shown in the figure), the same kind of electrodes are always arranged close to each other between the adjacent light emitting chips, so that the same kind of electrodes of the two adjacent light emitting chips can be in contact with the second height area or the second conductive layer at one position. Fig. 14 illustrates a schematic top view of a chip sense board corresponding to fig. 13. For example, the fifth conductive layer or the sixth conductive layer corresponding to the same kind of electrodes of two adjacent light emitting chips on the light emitting backplane may also be communicated to form a larger area, that is, each electrode of a light emitting chip can share the fifth conductive layer or the sixth conductive layer with the adjacent light emitting chip close to the electrode. It is understood that, in this example, by sequentially and alternately arranging the electrodes of the light emitting chips, at least one of the piezoelectric material layer, the second conductive layer, the second height region of the first conductive layer, the fifth conductive layer, and the sixth conductive layer may be formed to have a larger size, so that the sum of the number of the structures on the chip detection board may be reduced, the manufacturing difficulty and the requirement for precision of the chip detection board may be reduced, and the yield and the cost control may be facilitated.
In the above example, the same kind of electrodes of the light emitting chips in the same column (with reference to the direction of the drawing) are located on the same side, so in some embodiments, the piezoelectric material layer may also be made to correspond to at least two light emitting chips in the same column. The at least two light-emitting chips share the same piezoelectric material layer, the number of the piezoelectric material layers on the chip detection board is reduced, and the volume of the piezoelectric material layers on the single chip detection board is increased.
In order to better understand the chip transferring method of the present embodiment, a manner of transferring the light emitting chip to the light emitting backplane is further described below. As shown in fig. 15, transferring the light emitting chip to the light emitting backplane, applying a pressure to the light emitting backplane sufficient to cause the layer of piezoelectric material to generate a current sufficient to drive the light emitting chip into operation before the bonding material of the light emitting chip has completely solidified comprises:
s1041, providing a light-transmitting substrate provided with a light-emitting chip;
the transparent substrate may be a growth substrate for growing the light emitting chip, or may be a transfer substrate, and the material of the transparent substrate may be any one of, but not limited to, glass, sapphire, and quartz. As shown in fig. 16, the electrodes of the light emitting chip 4 are disposed on the side away from the light transmitting substrate 5, and the light emitting chip 4 is connected to the light transmitting substrate 5 through the side where no electrode is disposed. The transparent substrate includes, but is not limited to, a substrate that is completely transparent or partially transparent, i.e., transparent or translucent, but it should be understood that, in order to observe the light emitting condition of the light emitting chip, the transparent substrate at least ensures that the light emitting chip can identify the location of the dead pixel when emitting light.
S1042, enabling one side, provided with the light-emitting chip, of the light-transmitting substrate to be opposite to the light-emitting back plate, and enabling electrodes of the light-emitting chip to be aligned to the third conducting layer and the fourth conducting layer of the light-emitting back plate;
the alignment process may be performed by a visual alignment technique including, but not limited to, a CCD (Charge coupled Device), and in some examples, the alignment may be assisted by providing a positioning hole, a positioning mark, and the like. Illustratively, one of the electrodes (e.g., the positive electrode) of the light emitting chip is aligned with the third conductive layer, and the other electrode (e.g., the negative electrode) is aligned with the fourth conductive layer.
S1043, enabling the light-transmitting substrate to approach the light-emitting back plate, and after the light-emitting chip is contacted with the light-emitting back plate, continuously pressing the light-transmitting substrate to apply pressure to the light-emitting back plate, wherein the pressure is enough to enable the piezoelectric material layer to generate current enough to drive the light-emitting chip to work;
it should be noted that, in this process, as shown in fig. 17, the electrodes of the light emitting chip 4 and/or the corresponding regions of the light emitting back plate 5 are provided with the bonding material 43, and after the light emitting chip 4 is contacted with the light emitting back plate 5, the bonding can be performed by using the bonding material 43. It can be understood that, although the light emitting chip is not bonded, since the electrodes of the light emitting chip are already in contact with the third conductive layer and the fourth conductive layer of the light emitting backplane, and the bonding material is also conductive, the light emitting chip is actually already electrically connected to the light emitting backplane, that is, both can achieve the transmission of current. Therefore, under normal conditions, the light emitting chip can emit certain light by applying pressure F to the light transmitting substrate to enable the piezoelectric material layer to form a current.
At this time, the light emitting condition of the light emitting chip can be observed through the light transmitting substrate, and the detection is completed. Illustratively, the image acquisition device can be arranged to record the light emitting condition of the light emitting chip, and the dead point position of the light emitting chip can be determined by computer vision and the like. The image acquisition device includes but is not limited to various optical sensors, and the light-emitting back plate of the embodiment includes but is not limited to a circuit board which emits visible light, such as a display back plate; the optical sensor can also comprise a circuit board which emits invisible light in the sensor, and for the invisible light, the optical sensor can also be an optical sensor which collects the invisible light. The image acquisition device may be disposed on a pickup device that picks up the light-transmissive substrate, or in another location that can facilitate acquisition of light from the light-emitting chip.
After the transfer of the light emitting chips is completed, the light-transmitting substrate is removed. If the transparent substrate is a growth substrate for growing chips, the light-emitting chips can be smoothly stripped from the growth substrate by adopting a Laser Lift Off (LLO) mode without limitation; if the light-transmitting substrate is a transfer substrate, the light-emitting chip is usually provided on the transfer substrate via an adhesive layer whose adhesiveness can be released, and the light-emitting chip is detached from the transfer substrate by releasing the adhesiveness of the adhesive layer.
As shown in fig. 18, in this embodiment, after applying a pressure sufficient to deform the piezoelectric material layer to the light-emitting back plate, the method further includes:
s201, taking down a light-emitting chip which does not successfully emit light or does not reach a preset condition in the deformation process of the piezoelectric material layer;
the predetermined condition can be defined according to actual conditions. For example, in one example, it may be determined whether the detected light emitting brightness of the light emitting chip reaches a certain set threshold, or whether the brightness difference between the certain light emitting chip and most other light emitting chips is greater than the corresponding set threshold, or the like.
It can be understood that, in the chip transfer method of this embodiment, when the light emitting condition of the light emitting chip is observed, the light emitting chip is in a state that bonding is not completed yet, so that when the light emitting chip is taken down, operations such as bond removal and the like are not required, so that the complexity of the process of taking down the light emitting chip is greatly reduced, and this is also beneficial to ensuring the quality of good products of final products.
S202, transferring the light-emitting chip to the vacant position formed by taking down the light-emitting chip which does not successfully emit light again;
the repair of the vacancy can be realized by selectively transferring the light emitting chip, and the process of specifically transferring the light emitting chip is not limited in this embodiment. However, in some implementations, when the light emitting chip is transferred to the vacant position again, sufficient pressure may be applied to detect the repaired light emitting chip after the light emitting chip contacts the light emitting backplane.
The chip transfer method of the embodiment utilizes the chip detection board, adopts the light-emitting backboard which can be matched with the chip detection board to directly form the conductive path of the light-emitting chip, can realize the power supply driving of the light-emitting chip in the process of transferring the light-emitting chip, detects the dead pixel condition of the light-emitting chip arranged on the light-emitting backboard in the process of transferring the light-emitting chip, is convenient for timely replacement and maintenance in some implementation processes, can maintain before the bonding material of the light-emitting chip is completely solidified, avoids the step of removing bonding, and reduces the maintenance complexity and difficulty.
Yet another alternative embodiment of the invention:
referring to fig. 7, the display back plate includes a light emitting chip, a third conductive layer, a fourth conductive layer, a fifth conductive layer, and a sixth conductive layer. The third conducting layer and the fourth conducting layer are arranged on the first surface of the display backboard, and two electrodes of the light-emitting chip are respectively connected with the third conducting layer and the fourth conducting layer. The light emitting chips on the display backplane are transferred to the display backplane by the chip transfer method of the above embodiment.
In some embodiments, the light emitting chips are arranged in an array, and the positions of the positive and negative electrodes of each adjacent light emitting chip in the connecting line direction of the two electrodes of the light emitting chips are arranged in a reversed manner; the same kind of electrodes of the adjacent light-emitting chips are connected to the same fifth conductive layer or the sixth conductive layer.
The display back plate of the embodiment can detect the dead pixel and maintain in the chip transferring process, and the display back plate is high in yield and good in quality.
The embodiment further provides a display device, which includes a frame and a display back plate, wherein the display back plate is fixed on the frame, and the display back plate on the display device is the display back plate of the embodiment. The display device has high yield and good quality. The display device of the present embodiment includes, but is not limited to, various electronic devices that perform display using a display backplane manufactured by using a light emitting chip, such as, but not limited to, various smart mobile terminals, PCs (Personal computers), displays, electronic billboards, and the like, and the display backplane may be further formed as a display panel of these electronic devices.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A chip detection board, comprising:
a substrate main body;
the first conducting layer is arranged on one side of the substrate main body and comprises a first height area and a second height area, the first height area is relatively close to the substrate main body, and the second height area is relatively far away from the substrate main body;
the piezoelectric material layer is arranged on a partial area of the first conducting layer, the piezoelectric material layer is arranged on one side, away from the substrate main body, of the first conducting layer, the first side of the piezoelectric material layer is electrically connected with the first height area of the first conducting layer, when the piezoelectric material layer deforms in the direction perpendicular to the substrate main body, voltage is generated between the first side and the second side, and the second side is the side opposite to the first side;
the second conducting layer is at least arranged on one side, far away from the substrate main body, of the piezoelectric material layer, and the second conducting layer is electrically connected with the second side of the piezoelectric material layer.
2. The chip sense board of claim 1, wherein the second height section comprises any one of:
a cushion block is arranged between the first conducting layer and the substrate main body, and the first conducting layer forms the second height area at the cushion block;
the first conductive layer includes a conductive plane having an equal thickness and a conductive body provided on a partial region of a side of the conductive plane away from the substrate main body, and the second height region is formed at the conductive body.
3. The die sense plate according to claim 1 or 2, wherein the die sense plate comprises a plurality of the piezoelectric material layers thereon, the piezoelectric material layers are arranged in an array, and each of the first conductive layers communicates with a plurality of the piezoelectric material layers.
4. A method of chip transfer, comprising:
providing a chip detection board, wherein the chip detection board is the chip detection board as claimed in any one of claims 1 to 3;
providing a light-emitting back plate, wherein the light-emitting back plate comprises a third conducting layer and a fourth conducting layer which are arranged on a first surface, and a fifth conducting layer and a sixth conducting layer which are arranged on a second surface, the third conducting layer and the fourth conducting layer are corresponding to electrodes of a light-emitting chip to be transferred and are used for being electrically connected with the electrodes of the light-emitting chip, the fifth conducting layer is electrically connected with the third conducting layer, and the sixth conducting layer is electrically connected with the fourth conducting layer;
the light-emitting back plate is arranged on the chip detection plate, the fifth conducting layer is electrically connected with the second height area of the first conducting layer, and the sixth conducting layer is electrically connected with the second conducting layer;
and transferring the light-emitting chip to the light-emitting backboard, and applying pressure to the light-emitting backboard to enable the piezoelectric material layer to generate current enough to drive the light-emitting chip to work before the bonding material of the light-emitting chip is completely solidified.
5. The chip transfer method according to claim 4, wherein the chip detection plate includes a plurality of the piezoelectric material layers thereon, the piezoelectric material layers being arranged in an array, and a distance between every two adjacent ones of the piezoelectric material layers in a line direction of two electrodes of the light emitting chips and every two adjacent ones of the second height regions is equal to a distance between every three adjacent ones of the light emitting chips in a line direction of the two electrodes;
before the light emitting chip is transferred to the light emitting back plate, the method comprises the following steps:
and transferring the light-emitting chips to a transfer substrate, and arranging the positions of the positive and negative electrodes of each adjacent light-emitting chip in the connecting line direction of the two electrodes of the light-emitting chips in a reversed manner.
6. The chip transfer method of claim 4, wherein the transferring the light emitting chip to the light emitting backplane, the applying pressure to the light emitting backplane sufficient to cause the layer of piezoelectric material to generate a current sufficient to drive the light emitting chip into operation before the bonding material of the light emitting chip has completely solidified comprises:
providing a light-transmitting substrate provided with a light-emitting chip, wherein one side of the light-emitting chip, which is provided with the electrode, is far away from the light-transmitting substrate;
the side, provided with the light-emitting chip, of the light-transmitting substrate is opposite to the light-emitting back plate, and the electrodes of the light-emitting chip are aligned to the third conducting layer and the fourth conducting layer of the light-emitting back plate;
and the light-transmitting substrate is close to the light-emitting back plate, and when the light-emitting chip is contacted with the light-emitting back plate, the light-transmitting substrate is continuously pressed down to apply pressure to the light-emitting back plate, wherein the pressure is enough to enable the piezoelectric material layer to generate current enough to drive the light-emitting chip to work.
7. The chip transfer method according to any one of claims 4 to 6, further comprising, after applying a pressure to the light-emitting backplane sufficient to deform the layer of piezoelectric material:
taking down the light-emitting chip which does not successfully emit light or does not reach the preset condition in the process of deformation of the piezoelectric material layer;
and transferring the light-emitting chip to the vacant position formed by removing the light-emitting chip.
8. A display backplane, comprising:
a light emitting chip;
the light-emitting chip further comprises a third conducting layer and a fourth conducting layer which are arranged on the first surface, and a fifth conducting layer and a sixth conducting layer which are arranged on the second surface, wherein the third conducting layer and the fourth conducting layer are electrically connected with the electrodes of the light-emitting chip, the fifth conducting layer is electrically connected with the third conducting layer, and the sixth conducting layer is electrically connected with the fourth conducting layer;
the light emitting chip is transferred onto the display backplane by the chip transfer method of any one of claims 4-7.
9. The display backplane of claim 8, wherein the light emitting chips are arranged in an array, and positions of the positive and negative electrodes of each adjacent light emitting chip in a connecting line direction of two electrodes of the light emitting chips are arranged in an inverted manner; and the same kind of electrodes of the adjacent light-emitting chips are connected to the fifth conducting layer or the sixth conducting layer at the same position.
10. A display device, comprising a frame and a display back plate, wherein the display back plate is fixed on the frame, and the display back plate is the display back plate according to claim 8 or 9.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116165523A (en) * | 2023-04-26 | 2023-05-26 | 上海聚跃检测技术有限公司 | Integrated circuit multi-chip joint test method and device |
| CN116565105A (en) * | 2023-07-04 | 2023-08-08 | 惠科股份有限公司 | Light-emitting chip transfer method, light-emitting structure and display panel |
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2021
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116165523A (en) * | 2023-04-26 | 2023-05-26 | 上海聚跃检测技术有限公司 | Integrated circuit multi-chip joint test method and device |
| CN116565105A (en) * | 2023-07-04 | 2023-08-08 | 惠科股份有限公司 | Light-emitting chip transfer method, light-emitting structure and display panel |
| CN116565105B (en) * | 2023-07-04 | 2024-01-30 | 惠科股份有限公司 | Light-emitting chip transfer method, light-emitting structure and display panel |
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