EP3770963B1 - Display module having led packages and manufacturing method thereof - Google Patents
Display module having led packages and manufacturing method thereof Download PDFInfo
- Publication number
- EP3770963B1 EP3770963B1 EP20176932.0A EP20176932A EP3770963B1 EP 3770963 B1 EP3770963 B1 EP 3770963B1 EP 20176932 A EP20176932 A EP 20176932A EP 3770963 B1 EP3770963 B1 EP 3770963B1
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- substrate
- led
- transfer
- led package
- wiring
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
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- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Definitions
- the disclosure relates to the field of display manufacture, and more particularly, to a display module with a plurality of LED packages transferred to a target substrate from a micro transfer substrate and a manufacturing method thereof.
- a light emitting diode is a micro inorganic light emitting material that self-emits light without a color filter and back light.
- the LED may be divided into a lamp type (lead wire type) and a chip type (surface mounted device (SMD) type).
- the chip type LED may be grown on a wafer by an epitaxy process (through crystal growth or material deposition on a substrate).
- the LED manufactured in this manner may be transferred to a target substrate, which may constitute a display module.
- US 2017/250329 A1 , US 2018/233494 A1 , WO 2019/068523 A1 , KR 2019 0006430 A , and US 2018/076182 A1 describe examples of the related art.
- An object of the disclosure is to provide a micro LED transfer method for transferring an light emitting diode (LED) package including a plurality of LEDs mounted on a connection substrate, which is formed with wiring layer on the top surface and the bottom surface, from a transfer substrate to a target substrate, and a display module manufactured by the method thereof.
- LED light emitting diode
- first may be designated as a second element, and likewise, a second element may also be designated as a first element.
- the display module of the invention is defined in claim 1 and includes a thin film transistor (TFT) layer on a surface of a substrate, a plurality of light emitting diode (LED) packages electrically coupled to the TFT layer, and a wiring electrically coupling circuits disposed to a back surface of the substrate.
- the substrate may be any one of a transparent substrate (e.g., glass substrate, quartz substrate, etc.), a flexible substrate and a plastic substrate, and may be referred to as a backplane.
- the substrate including the TFT layer may be referred to as a 'TFT substrate,' a 'TFT backplane,' or a 'target substrate,' and the terms may be used interchangeably in the disclosure.
- the LED package refers to a structure including a connection substrate which is a portion of the transfer substrate and a plurality of LEDs disposed in an electrically coupled state on the connection substrate.
- the display module of the invention is formed with a molding part for covering all of the plurality of LED packages after transferring the plurality of LED packages to the target substrate.
- the display module may include a separate substrate (for example, the separate substrate may be disposed at a rear of the target substrate considering the disposition; hereinafter “rear substrate”) that electrically couples to a back surface of the target substrate through a flexible printed circuit (FPC).
- the rear substrate may be formed in a thin film form, in which a thickness of the thin film arranging at about tens of ⁇ m (e.g., 50 um or less) or in in a thin glass form.
- the plastic material may be formed in any one or a combination of materials including, for example, polyimide (PI), polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN) and polycarbonate (PC).
- PI polyimide
- PET polyethylene terephthalate
- PES polyethersulfone
- PEN polyethylene naphthalate
- PC polycarbonate
- the target substrate may be formed with a side surface wiring formed at an edge part, and may electrically connect a first connection pad formed at the edge part of a front surface and a second connection pad formed at the back surface of the target substrate.
- the side surface wiring may be formed along a front surface, a side end surface, and the back surface of the target substrate, and one end of the side surface wiring may be electrically coupled to the first connection pad and an opposite end may be electrically coupled to the second connection pad.
- the side surface wiring may protrude from the side end surface of the target substrate by the thickness of the side surface wiring because a portion thereof may be formed on the side end surface of the target substrate.
- the rear substrate may be electrically coupled to the second connection pad through the FPC.
- the driver integrated circuit (IC) mounted to the back surface of the target substrate may be directly connected with the second connection pad or indirectly connected through a separate wiring.
- the display module described above may be arranged in plurality as a tiled type to form a large-scale display apparatus.
- a plurality of display modules may be arranged so that the plurality of display modules form a large-scale display apparatus.
- the display module may be arranged with a plurality of micro light emitting diodes (also referred to as microLED or ⁇ LED) which are respectively 100 ⁇ m or less, and the micro light emitting diode may be an a plurality of inorganic light emitting diodes (inorganic LED).
- the display module according to the embodiments herein may improve contrast ratio, response time and energy efficiency compared to liquid crystal display (LCD) panels requiring back light.
- LCD liquid crystal display
- the micro LED is advantageous for its fast response rate, low power consumption, high brightness, long lifespan and others, and is regarded as the light emitting device of next generation in displays. Specifically, the micro LED exhibits a greater efficiency in converting electricity to photons compared to a conventional liquid crystal display (LCD) or an organic light emitting diode (OLED). That is, the "brightness per watt" is greater compared to conventional LCDs or OLED display. Accordingly, the micro LED may emit light at a similar brightness with about half of the energy consumed to emit light in conventional LEDs or OLEDs. In addition, the micro LED may be smaller in size than those conventional LEDS, which may exceed 100 ⁇ m in width, length and height.
- LCD liquid crystal display
- OLED organic light emitting diode
- the micro LED may exhibit a higher resolution, a superior color, contrast and brightness, a wider color range, and exhibit sharpness even under bright sunlight.
- the micro LED may be guaranteed a long lifespan without deformation due to its insusceptibility to a burn in phenomenon and its characteristic of generating less heat.
- the micro LED may be formed with anode and cathode electrodes on a same first surface and a light emitting surface and may be formed with a flip chip structure on a second surface positioned at an opposite side of the first surface formed with the electrodes.
- the LED package may include at least two micro LEDs emitting different colors from each other and a middle substrate mounted with the micro LEDs cut to a predetermined size (hereinafter, referred to as "connection substrate").
- the LED package is formed with a wiring at each of the one surface of the connection substrate and the opposite surface positioned at the opposite side of the one surface of the connection substrate.
- the micro LEDs is electrically coupled to the one surface of the connection substrate, and the opposite surface is electrically coupled to the target substrate.
- the connection substrate may be formed as multi-layers, the size (i.e., length and width) of the formed electrode pad may be without limitation, and the connection substrate may be coupled to various forms according to the configuration of the TFT substrate.
- connection substrate forming the LED package may not be mounted with a separate electronic device other than the micro LED, and may perform a passage role of electrically coupling each micro LED and a target substrate interchangeably.
- connection substrate may be formed with at least one via hole.
- each of the micro LEDs disposed at the one surface of the connection substrate may be electrically coupled to individual electrode pads or a common electrode pad formed at the opposite surface of the connection substrate through the via hole.
- connection substrate may also be formed with the side surface wiring for electrically coupling wirings formed at each of the one surface and the opposite surface of the connection substrate at the edge part.
- connection substrate may include both the via hole and the side surface wiring.
- connection substrate may be formed of insulators such as polyimide (PI) substrate, glass substrate or silicon wafer.
- PI polyimide
- the LED package may be conveyed and arranged to an appropriate position of a transfer substrate when performing a shuffling process taking into consideration the arrangement for improving image quality and uniformity.
- the LED package may, based on a plurality of micro LEDs being electrically connected to the connection substrate, perform an electro luminescence (EL) test on the LED package.
- EL electro luminescence
- a defective LED package may be easily detected through the EL test (e.g., detecting whether the plurality of micro LEDs mounted on each LED package is defective or below the standard).
- a zero-defect display module may be realized by removing all the detected defective LED packages from the transfer substrate and replacing with normal LED packages to the empty positions from which the detected defective LED packages were removed.
- the LED package may be transferred from the transfer substrate to a target substrate through a pick and place method, a stamping method, or a laser transfer method.
- the method of transfer is not limited thereto.
- the display module may be installed and applied to a wearable device, a portable device, a handheld device and various electronic products or electronic devices that require a display as a single unit, and may be applied to a display device such as a monitor for a personal computer (PC), a high resolution TV and signage through a plurality of assembly arrangements in matrix type.
- a display device such as a monitor for a personal computer (PC), a high resolution TV and signage through a plurality of assembly arrangements in matrix type.
- PC personal computer
- the display module including a plurality of LED packages according to an embodiment will be described below with reference to FIG. 1 .
- FIG. 1 is a schematic diagram illustrating a cross-sectional view of a display module including an LED package according to an embodiment which is not part of the invention.
- the display module 100 includes a substrate 200 which may be transparent, a TFT layer 210 formed at one surface of the substrate 200, and a plurality of LED packages 150 arranged to be electrically coupled to the TFT layer 210.
- the structure that includes both the substrate 200 and the TFT layer 210 may be referred to as a 'TFT substrate,' a 'TFT back plane,' or a 'target substrate.' In the embodiments described herein, this structure is referred to as a 'target substrate.'
- the plurality of LED packages 150 are arranged at a predetermined pitch on the TFT layer 210.
- the display module 100 further includes a black matrix 230 formed between each of the plurality of LED packages 150.
- the display module 100 may include a protection layer 240 covering the plurality of LED packages 150 and the black matrix 230.
- the protection layer may be formed of a transparent material.
- the plurality of LED packages 150 may form a display pixel.
- the plurality of LED packages 150 may include at least two or more micro LEDs 131,132 and 133 emitting light of different colors from one another, and a connection substrate 110 electrically coupling the micro LEDs 131,132 and 133 and the TFT layer 210.
- Each of the micro LEDs 131,132 and 133 may be a sub pixel forming one display pixel.
- the connection substrate 110 may be a part of a transfer substrate 160 (shown in FIG. 8 ). Specifically, the plurality of micro LEDs epi grown on the epi substrate may be conveyed to the transfer substrate at a predetermined pitch.
- the predetermined pitch may be different from the above-described predetermined pitch in which the plurality of LED packages 150 are arranged on the TFT layer 210.
- the plurality of micro LEDs conveyed to the transfer substrate may be arranged in a predetermined pattern.
- the pattern may use a predetermined number of micro LEDs as sub pixels to form a single display pixel.
- the LED package 150 including the connection substrate 110 with the plurality of micro LEDs 131,132 and 133 that form a signal display pixel and the micro LEDs electrically coupled to the connection substrate 110 may be manufactured.
- connection substrate 110 is formed with a first wiring 111 electrically connected to the plurality of micro LEDs 131,132 and 133 on the one surface of the connection substrate 110.
- the connection substrate 110 is also formed with a second wiring 113 electrically connected to the TFT layer 210 on the opposite surface of the connection substrate 110 (a surface opposite from the one surface).
- the first wiring 111 may be formed with a plurality of first electrode pads that connect with each anode and cathode electrodes 131a,131b,132a,132b,133a and 133b (as shown in FIG. 6 ) of the plurality of micro LEDs 131,132 and 133.
- the second wiring 113 may also be formed with the plurality of first electrode pads that are electrically coupled with the electrode pads of the TFT layer 210.
- connection substrate 110 may include at least one via hole 115, and the via hole may be configured with a conductor to electrically couple the first wiring 111 and the second wiring 113.
- connection substrate110 may be formed with a side surface wiring at the edge part of the connection substrate 110 to also electrically couple the first and second wirings 111 and 113 to each other.
- the side surface wiring may be formed after depositing a conductive material to the edge part of the connection substrate 110 and the conductive material may be removed with a laser beam leaving a portion of the conductive material to be used as side surface wiring.
- the side surface wiring may be formed by printing the conductive material to the wiring at a predetermined width.
- the plurality of micro LEDs 131,132 and 133 which are sub-pixels mounted on the one connection substrate 110, have been described as forming a single display pixel, but the embodiment is not limited thereto.
- the plurality of micro LEDs 131, 132 and 133 may form two or more display pixels and may be disposed on one connection substrate 110.
- FIG. 2A is a diagram illustrating an LED package according to an embodiment.
- the LED package 150' may be provided with two display pixels G1 and G2 (i.e., each pixel formed with three micro LEDs 131', 132' and 133') on one connection substrate 110'.
- each display pixel G1 and G2 may be arranged to be spaced apart at a display pitch P1.
- the connection substrate 110' of the LED package 150' illustrated in FIG. 2A may, for example, be formed so that the length of the connection substrate is longer than the width of the connection substrate.
- the embodiment is not limited thereto.
- the connection substrate 110' of the LED package 150' may be formed such that the length and the width are equal to each other.
- the plurality of micro LEDs 131', 132' and 133', each of which are sub-pixels, may be operated on the connection substrate 110' with a passive matrix (PM) driving method.
- the plurality of LED packages 150' may be operated on the target substrate with an active matrix (AM) driving method.
- the PM driving method is a method for applying voltage consecutively to electrodes that are crossed in horizontal direction and vertical direction.
- the AM driving method is a method for directly driving each pixel individually when each pixel includes a TFT and an electrode, in which the TFT performs a switch role for each pixel and a capacitor that stores information for a predetermined time (e.g., one frame).
- FIG. 2B is a diagram illustrating an LED package according to another embodiment.
- the LED package 150" may be provided with two display pixels G1 and G3 (i.e., each pixel formed with three micro LEDs 131", 132" and 133") on one connection substrate 110". This is similar to the LED package 150' shown in FIG. 2A .
- each display pixel G1 and G3 may be arranged to be spaced apart at a display pitch P2.
- the LED package 150" may be formed so that the width of the connection substrate 110" is longer than the length of the connection substrate 110".
- FIG. 2C is a diagram illustrating an LED package according to yet another embodiment.
- the LED package 150′′′ may be provided with four display pixels G1, G2, G3 and G4 (i.e., each pixel formed with three micro LEDs 131′′′, 132′′′ and 133′′′) on one connection substrate 110′′′.
- each pixel may be arranged to be spaced apart at predetermined display pitches P1 and P2 in a horizontal direction and a vertical direction, respectively.
- the plurality of micro LEDs which are sub-pixels may be operated on the connection substrate with the PM driving method, and the plurality of LED packages may be operated on the target substrate with the AM driving method.
- the LED package according to still another embodiment may be configured so that an odd number of display pixels are arranged on one connection substrate.
- the number of micro LEDs that form a signal display pixel may be formed of a micro LED emitting at least two different colors.
- a signal display pixel may be formed by combining micro LEDs of various colors of red/blue, red/green, green/blue, red/blue/green, red/blue/white, red/green/blue/white, red/green/green/white, or the like.
- the combination of micro LEDs of various colors is not limited thereto.
- FIG. 3 is a block diagram illustrating an LED package transfer device according to an embodiment.
- the LED package transfer device 1 may include a transfer part 10 for transferring the plurality of LED packages 150 disposed at a predetermined arrangement on the transfer substrate 160 (shown in FIG. 8 ) to the target substrate 200 (shown in FIG. 9 ).
- the LED package transfer device 1 may also include a stage 20 disposed adjacent to the transfer part 10 and configured to move the target substrate along the X-axis, Y-axis, Z-axis.
- the LED package transfer device 1 may include a memory 30 configured to store characteristic information of each of the plurality of LED packages and a processor 40 configured to identify a position where each of the plurality of LED packages are to be disposed on the transfer substrate based on the stored characteristic information, and control the transfer part 10 and the stage 20 to transfer the plurality of LED packages to the identified positions.
- the transfer part 10 may simultaneously transfer the predetermined LED packages from the transfer substrate to the target substrate 200 through a laser lift off (LLO) method.
- LLO laser lift off
- the transfer part 10 may, in order to proceed with the transfer process through the LLO method, include a laser oscillator 300 (shown in FIG. 13 ) for irradiating a laser beam toward the transfer substrate, and a stage capable of moving the transfer substrate along the X-axis, the Y-axis, and the Z-axis and rotating about a Z-axis.
- a laser oscillator 300 shown in FIG. 13
- a stage capable of moving the transfer substrate along the X-axis, the Y-axis, and the Z-axis and rotating about a Z-axis.
- the stage 20 may clamp the target substrate 200 to the top surface of the stage 20 such that the target substrate 200 is detachable, and may move the target substrate 200 in a clamped state along the X-axis, the Y-axis, and the Z-axis and rotate about the Z-axis.
- the memory 30 may be implemented as at least one of a flash memory type, a read only memory (ROM), a random access memory (RAM), a hard disk type, a multimedia card micro type, or a card type memory (e.g., a secure digital (SD) memory, an extreme digital (XD) memory, etc.).
- a flash memory type e.g., a hard disk type, a multimedia card micro type, or a card type memory (e.g., a secure digital (SD) memory, an extreme digital (XD) memory, etc.).
- SD secure digital
- XD extreme digital
- the memory 30 may be electrically coupled with the processor 40 to transfer signals and information with the processor 40.
- the memory 30 may store characteristic information of input or irradiated plurality of LED packages, and the processor 40 may access characteristic information stored in the memory 30.
- the processor 40 may control the overall operations of the LED package transfer device 1. That is, the processor 40 may be electrically coupled with the transfer part 10 and the stage 20 and may control each component.
- the processor 40 may control the transfer part 10 and the stage 20 to convey the plurality of LED packages to a carrier substrate 50 (referring to FIG. 4 ), and convey again from the carrier substrate 50 to the transfer substrate.
- the characteristic information of the plurality of LED packages may be used to arrange for a relatively uniform characteristic to be provided throughout the whole area of the transfer substrate.
- the processor 40 may test the characteristics on the plurality of LED packages arranged on the carrier substrate, and analyze the brightness, wavelength, and the like of each micro LED included in the LED package per each area of the carrier substrate.
- the analyzed result may be stored in the memory 30.
- the processor 40 may perform simulations based on the position and combination of each LED package to analyze the brightness and wavelength of the display module 100 and to test the overall uniformity prior to transferring from the carrier substrate to the transfer substrate.
- the processor 40 may be further configured to form a data map based the determined optimum arrangement.
- the data map may be stored in the memory 30.
- the plurality of LED packages on the carrier substrate may be conveyed to the transfer substrate through the pick and place method, the stamping method or the LLO method.
- the processor 40 may control the transfer part 10 and the stage 20 to convey the plurality of LED packages arranged on the transfer substrate 150 to the target substrate 200.
- the embodiment is not limited to controlling each and every component of the LED package transfer device 1 by a single processor 40, but may be controlled by multiple processors.
- the processor 40 may include one or more of a central processing unit (CPU), a controller, an application processor (AP), a communication processor (CP), and an ARM processor.
- FIG. 4 is a diagram illustrating LED packages on a carrier substrate according to an embodiment.
- the plurality of connection substrates 110 may be arranged on the carrier substrate 50 at a predetermined distance.
- the plurality of connection substrates 110 may be arranged in a matrix form.
- connection substrate 110 is formed with first and second wirings 111 and 113 to each of the one surface and the opposite surface.
- the first and second wirings 111 and 113 may be electrically coupled through the via hole 115.
- connection substrate 110 On the one surface of the connection substrate 110, a plurality of first electrodes (shown in FIG. 6 ) capable of being electrically coupled to each of the plurality of micro LEDs may be formed. Here, the plurality of first electrode may be electrically coupled with the first wiring 111. In addition, on the opposite surface of the connection substrate 110, a plurality of second electrodes capable of being electrically coupled to the TFT layer 210 (referring to FIG. 1 ) may be formed. Here, the plurality of second electrodes may be electrically coupled with the second wiring 113.
- the carrier substrate 150 may be formed as a transparent substrate with material, such as quartz.
- the plurality of connection substrates 110 and an adhesive layer 51 to which the plurality of connection substrates 110 are attached may be formed on one surface of the carrier substrate 50.
- the plurality of connection substrates 110 may be detachably configured on the adhesive layer 51.
- the adhesive layer 51 may be a pressure sensitive adhesives (PSA).
- an anisotropic conductive film 120 may be laminated to the one surface of the plurality of connection substrates 110 arranged on the carrier substrate 50 so that the plurality of micro LEDs may be attachable in an electrically coupled state to the one surface of the connection substrate 110.
- the plurality of micro LEDs 131,132 and 133 grown from a growth substrate may be seated on the anisotropic conductive film 120 on the connection substrate after undergoing an isolation process.
- the plurality of micro LEDs 131,132 and 133 may be formed in a flip chip form, and each of the anode and cathode electrodes 131a, 131b, 132a, 132b, 133a and 133b may be electrically coupled to each of the plurality of first electrodes formed at each connection substrate 110.
- the plurality of micro LEDs 131,132 and 133 may be a micro LED emitting red (R), green (G) and blue (B) colors respectively, and three micro LEDs 131,132 and 133 may be sub-pixels forming at display pixel.
- a display pixel may include two or more micro LEDs emitting at least two different colors.
- a signal display pixel may be formed by combining micro LEDs of various colors of red/blue, red/green, green/blue, red/blue/green, red/blue/white, red/green/blue/white, red/green/green/white, or the like.
- the EL test on the plurality of micro LEDS 131, 132 and 133 may be performed.
- the EL test is a non-destructive inspection method that uses a probe, and may identify the operation characteristics of the micro LED by measuring the electro luminescence characteristics disposed on the carrier substrate.
- an LED package including a micro LED that indicates a characteristic lower than a predetermined threshold, or a defective micro LED that does not emit light may be determined through a screening process.
- the LED packages that pass the screening process may then be precisely divided by correlated color temperature (CCT) or by light-emitting colors undergoing a color binning process.
- CCT correlated color temperature
- test result data obtained by undergoing the EL test, the screening process, and the color binning process may be stored in the memory 30 of the LED package transfer device 1.
- the processor 40 may be configured to generate a shuffle data for the plurality of LED packages 150 conveyed from the carrier substrate 50 to the transfer substrate 160 to be arranged to have a certain overall uniform brightness on the transfer substrate 160 based on the test result data.
- the plurality of LED packages 150 on the carrier substrate 50 may be conveyed to the transfer substrate 160.
- the plurality of LED packages 150 may be arranged to have a certain overall uniform brightness on the transfer substrate 160 based on the above-described shuffle data.
- the transfer substrate 160 may be a glass substrate or a silicon wafer.
- the transfer substrate 160 may be formed with the adhesive layer 161 on at the one surface to which the plurality of LED packages 150 may be attached in an easily separable manner from the transfer substrate 160.
- the adhesive layer 161 may be the pressure sensitive adhesives (PSA).
- the plurality of LED packages 150 conveyed to the transfer substrate 160 may be exposed with a plurality of micro LEDs and the opposite surface of the connection substrate may be attached to the transfer substrate.
- the plurality of LED packages 150 disposed on the transfer substrate 160 are transferred to the target substrate 200.
- the plurality of micro LEDs 131,132 and 133 are in an exposed state, the plurality of LED packages 150 may be transferred from the transfer substrate 160 to the target substrate 200 through the pick and place transfer process or the stamping transfer process.
- a basic structure of the display module 100 may be formed.
- the display module 100 forms a black matrix 230 between each of the plurality of LED packages 150 on the TFT layer 210.
- the black matrix 230 blocks light leakage from a peripheral area of each LED package adjacent to one another to improve contrast ratio.
- a molding part 241 is formed to protect the plurality of LED packages 150 and the black matrix 230 of the display module 100.
- the molding part 241 may be a transparent resin material.
- a touch screen may be stacked on the molding part 241.
- a protection layer 240 covering both the plurality of LED packages 150 and the black matrix 230 may be formed (as shown in FIG. 1 ) on top of the above-described molding part 241 to protect the plurality of LED packages and the black matrix.
- the protection layer 240 or the touch screen may be stacked on the molding part 241.
- the picker after picking the plurality of LED packages from the transfer substrate may move the plurality of LED packages toward the target substrate side to place the plurality of LED packages to a predetermined position of the target substrate.
- the LED package transfer process according to another embodiment may be carried out through a laser transfer process.
- the transfer substrate with the plurality of LED packages disposed may be disposed to face the one surface of the target substrate to which the plurality of LED packages may be transferred, and the transfer substrate may be positioned between the laser oscillator irradiating a laser beam and the target substrate.
- FIGS. 11 to 14 are diagrams illustrating sequentially a manufacturing process of a display module including an LED package according to an embodiment.
- the plurality of LED packages 150 disposed on the carrier substrate 50 may be transferred to an additional carrier substrate 170 to have an overall uniform brightness based on the above-described shuffle data.
- the plurality of LED packages 150 may be formed by attaching the opposite surface of the connection substrate to which micro LEDs have not been disposed to an additional carrier substrate 170.
- the additional carrier substrate 170 may be formed of a transparent material for the plurality of LED packages 150 to be conveyed to a transfer substrate 180 by a laser beam.
- the additional carrier substrate 170 and the transfer substrate 180 may be disposed to face each other.
- the plurality of LEDs provided in the plurality of LED packages of the additional carrier substrate 170 may be placed in close contact to the one surface of the transfer substrate 180.
- the plurality of LED packages 150 may separate from an adhesive layer 171 of the additional carrier substrate 170 due to the heat of the laser beam and may attach to an adhesive layer 181 of the transfer substrate 180.
- the plurality of LED packages 150 transferred to the additional carrier substrate 170 may be in a state in which the plurality of micro LEDs are in contact with the adhesive layer 181 of the transfer substrate 180.
- the adhesive layer 171 of the additional carrier substrate 170 and the adhesive layer 181 of the transfer substrate 180 may be pressure sensitive adhesives (PSA).
- PSA pressure sensitive adhesives
- the transfer substrate 180 may be formed of a transparent material to convey the plurality of LED packages 150 to the target substrate 200 by a laser beam.
- the transfer substrate 180 in order to convey the plurality of LED packages 150 on the transfer substrate 180 to the target substrate 200, the transfer substrate 180 may be configured to face the target substrate 200. In this case, the transfer substrate 180 may be configured such that the plurality of LED packages 150 face the surface to be transferred on the target substrate 200.
- a mask 190 may be disposed on the opposite surface (i.e., the surface where the LED package is not disposed) of the transfer substrate 180.
- the mask 190 may limit an irradiation area of the laser beam irradiated toward the transfer substrate 180 from the laser oscillator 300.
- the mask 190 may be provided with a plurality of openings 191 for laser beam to pass therethrough.
- the transfer substrate 180 and the target substrate 200 may be set to the transfer position by a separate stage in an X-Y plane movement, respectively.
- the laser beam that passed the opening 191 of the mask 190 may then transmit to the transfer substrate 180 and heat the adhesive layer 181.
- the LED package 150 positioned at an area irradiated by the laser beam in the transfer substrate 180 may be separated from the adhesive layer 181 of the transfer substrate 180 and transferred to the TFT layer 210.
- the plurality of LED packages may be transferred to the TFT layer 210 substantially at the same time (i.e., consecutively at a very short time interval).
- the LED package 150 transferred to the TFT layer 210 may be electrically coupled with each of the electro pads provided on the TFT layer 210 which is disposed on the opposite surface of the connection substrate.
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Description
- The disclosure relates to the field of display manufacture, and more particularly, to a display module with a plurality of LED packages transferred to a target substrate from a micro transfer substrate and a manufacturing method thereof.
- A light emitting diode (LED) is a micro inorganic light emitting material that self-emits light without a color filter and back light. The LED may be divided into a lamp type (lead wire type) and a chip type (surface mounted device (SMD) type).
- The chip type LED may be grown on a wafer by an epitaxy process (through crystal growth or material deposition on a substrate). The LED manufactured in this manner may be transferred to a target substrate, which may constitute a display module.
US 2017/250329 A1 ,US 2018/233494 A1 ,WO 2019/068523 A1 ,KR 2019 0006430 A US 2018/076182 A1 describe examples of the related art. - An object of the disclosure is to provide a micro LED transfer method for transferring an light emitting diode (LED) package including a plurality of LEDs mounted on a connection substrate, which is formed with wiring layer on the top surface and the bottom surface, from a transfer substrate to a target substrate, and a display module manufactured by the method thereof.
- According to the present invention there is provided an apparatus and method as set forth in the appended claims. Other features of the invention will be apparent from the dependent claims, and the description which follows.
- The above and other aspects, features and advantages of certain embodiments which are either illustrative and not part of the invention or part of the invention, will be more apparent from the following detailed description, taken in conjunction with the accompanying drawings, in which:
-
FIG. 1 is a schematic diagram illustrating a cross-sectional view of a display module including an LED package according to an embodiment which is not part of the invention; -
FIG. 2A is a diagram illustrating an LED package according to an embodiment; -
FIG. 2B is a diagram illustrating an LED package according to an embodiment; -
FIG. 2C is a diagram illustrating an LED package according to an embodiment; -
FIG. 3 is a schematic block diagram illustrating an LED package transfer device according to an embodiment; -
FIG. 4 is a diagram illustrating LED packages on a carrier substrate according to an embodiment; -
FIG. 5 is a diagram illustrating a manufacturing process of a display module including a conductive film according to an embodiment; -
FIG. 6 is a diagram illustrating a manufacturing process of a display module including an LED package grown from a growth substrate according to an embodiment; -
FIG. 7 is a diagram illustrating a manufacturing process of performing an electro luminescence test according to an embodiment; -
FIG. 8 is a diagram illustrating a manufacturing process of transferring an LED package from a carrier substrate to a transfer substrate according to an embodiment; -
FIG. 9 is a diagram illustrating a manufacturing process of transferring an LED package from a transfer substrate to a target substrate according to an embodiment; -
FIG. 10A is a diagram illustrating a manufacturing process of a display module including a black matrix between each of LED packages according to an embodiment; -
FIG. 10B is a diagram illustrating a manufacturing process of forming a molding part according to an embodiment; and -
FIGS. 11 to 14 are diagrams illustrating sequentially a manufacturing process of a display module including an LED package according to an embodiment. - Embodiments which are either illustrative and not part of the invention or part of the invention, will be described with reference to the accompanying drawings, such that one of ordinary skill in the art would reasonably understand the invention. For the convenience of description, the elements in the accompanying drawings are enlarged so that they are larger than their actual sizes, and the ratio of each element are exaggerated or reduced to more clearly describe the embodiments of the disclosure.
- It will be understood that when an element is referred to as being "on" or "connected to" or "coupled to" another element, it can be directly on or connected or coupled to the other element or an intervening element may be present. When an element is referred to as being "directly on" or "directly connected" or "directly coupled" to another element, there may be no intervening elements therebetween.
- The terms such as "first," "second," and so on may be used to describe a variety of elements, but the elements should not be limited by these terms. The terms may be used only to distinguish one element from another. For example, a first element may be designated as a second element, and likewise, a second element may also be designated as a first element.
- A singular expression may include a plural expression, unless otherwise indicated. It is to be understood that the terms such as "comprise" or "consist of" are used herein to designate a presence of a characteristic, number, step, operation, element, component, or a combination thereof, and may be interpreted as adding one or more of other characteristics, numbers, steps, operations, elements, components or a combination thereof.
- The display module of the invention is defined in
claim 1 and includes a thin film transistor (TFT) layer on a surface of a substrate, a plurality of light emitting diode (LED) packages electrically coupled to the TFT layer, and a wiring electrically coupling circuits disposed to a back surface of the substrate. The substrate may be any one of a transparent substrate (e.g., glass substrate, quartz substrate, etc.), a flexible substrate and a plastic substrate, and may be referred to as a backplane. In addition, the substrate including the TFT layer may be referred to as a 'TFT substrate,' a 'TFT backplane,' or a 'target substrate,' and the terms may be used interchangeably in the disclosure. - The LED package refers to a structure including a connection substrate which is a portion of the transfer substrate and a plurality of LEDs disposed in an electrically coupled state on the connection substrate. The display module of the invention is formed with a molding part for covering all of the plurality of LED packages after transferring the plurality of LED packages to the target substrate.
- The display module may include a separate substrate (for example, the separate substrate may be disposed at a rear of the target substrate considering the disposition; hereinafter "rear substrate") that electrically couples to a back surface of the target substrate through a flexible printed circuit (FPC). The rear substrate may be formed in a thin film form, in which a thickness of the thin film arranging at about tens of µm (e.g., 50 um or less) or in in a thin glass form. When the rear substrate is formed in a thin film form, the plastic material may be formed in any one or a combination of materials including, for example, polyimide (PI), polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN) and polycarbonate (PC).
- The target substrate may be formed with a side surface wiring formed at an edge part, and may electrically connect a first connection pad formed at the edge part of a front surface and a second connection pad formed at the back surface of the target substrate. The side surface wiring may be formed along a front surface, a side end surface, and the back surface of the target substrate, and one end of the side surface wiring may be electrically coupled to the first connection pad and an opposite end may be electrically coupled to the second connection pad. The side surface wiring may protrude from the side end surface of the target substrate by the thickness of the side surface wiring because a portion thereof may be formed on the side end surface of the target substrate. In this case, the rear substrate may be electrically coupled to the second connection pad through the FPC. The driver integrated circuit (IC) mounted to the back surface of the target substrate may be directly connected with the second connection pad or indirectly connected through a separate wiring.
- The display module described above may be arranged in plurality as a tiled type to form a large-scale display apparatus. In other words, a plurality of display modules may be arranged so that the plurality of display modules form a large-scale display apparatus.
- As an example of a flat panel display, the display module may be arranged with a plurality of micro light emitting diodes (also referred to as microLED or µLED) which are respectively 100 µm or less, and the micro light emitting diode may be an a plurality of inorganic light emitting diodes (inorganic LED). The display module according to the embodiments herein may improve contrast ratio, response time and energy efficiency compared to liquid crystal display (LCD) panels requiring back light.
- The micro LED is advantageous for its fast response rate, low power consumption, high brightness, long lifespan and others, and is regarded as the light emitting device of next generation in displays. Specifically, the micro LED exhibits a greater efficiency in converting electricity to photons compared to a conventional liquid crystal display (LCD) or an organic light emitting diode (OLED). That is, the "brightness per watt" is greater compared to conventional LCDs or OLED display. Accordingly, the micro LED may emit light at a similar brightness with about half of the energy consumed to emit light in conventional LEDs or OLEDs. In addition, the micro LED may be smaller in size than those conventional LEDS, which may exceed 100 µm in width, length and height. Additionally, the micro LED may exhibit a higher resolution, a superior color, contrast and brightness, a wider color range, and exhibit sharpness even under bright sunlight. The micro LED may be guaranteed a long lifespan without deformation due to its insusceptibility to a burn in phenomenon and its characteristic of generating less heat.
- The micro LED may be formed with anode and cathode electrodes on a same first surface and a light emitting surface and may be formed with a flip chip structure on a second surface positioned at an opposite side of the first surface formed with the electrodes.
- The LED package may include at least two micro LEDs emitting different colors from each other and a middle substrate mounted with the micro LEDs cut to a predetermined size (hereinafter, referred to as "connection substrate").
- The LED package is formed with a wiring at each of the one surface of the connection substrate and the opposite surface positioned at the opposite side of the one surface of the connection substrate. The micro LEDs is electrically coupled to the one surface of the connection substrate, and the opposite surface is electrically coupled to the target substrate. The connection substrate may be formed as multi-layers, the size (i.e., length and width) of the formed electrode pad may be without limitation, and the connection substrate may be coupled to various forms according to the configuration of the TFT substrate.
- The connection substrate forming the LED package may not be mounted with a separate electronic device other than the micro LED, and may perform a passage role of electrically coupling each micro LED and a target substrate interchangeably.
- The connection substrate may be formed with at least one via hole. As such, each of the micro LEDs disposed at the one surface of the connection substrate may be electrically coupled to individual electrode pads or a common electrode pad formed at the opposite surface of the connection substrate through the via hole.
- The connection substrate may also be formed with the side surface wiring for electrically coupling wirings formed at each of the one surface and the opposite surface of the connection substrate at the edge part. In this case, the connection substrate may include both the via hole and the side surface wiring.
- The connection substrate may be formed of insulators such as polyimide (PI) substrate, glass substrate or silicon wafer.
- The LED package may be conveyed and arranged to an appropriate position of a transfer substrate when performing a shuffling process taking into consideration the arrangement for improving image quality and uniformity.
- The LED package may, based on a plurality of micro LEDs being electrically connected to the connection substrate, perform an electro luminescence (EL) test on the LED package. As such, a defective LED package may be easily detected through the EL test (e.g., detecting whether the plurality of micro LEDs mounted on each LED package is defective or below the standard). A zero-defect display module may be realized by removing all the detected defective LED packages from the transfer substrate and replacing with normal LED packages to the empty positions from which the detected defective LED packages were removed.
- The LED package may be transferred from the transfer substrate to a target substrate through a pick and place method, a stamping method, or a laser transfer method. However, the method of transfer is not limited thereto.
- The display module may be installed and applied to a wearable device, a portable device, a handheld device and various electronic products or electronic devices that require a display as a single unit, and may be applied to a display device such as a monitor for a personal computer (PC), a high resolution TV and signage through a plurality of assembly arrangements in matrix type.
- The display module including a plurality of LED packages according to an embodiment will be described below with reference to
FIG. 1 . -
FIG. 1 is a schematic diagram illustrating a cross-sectional view of a display module including an LED package according to an embodiment which is not part of the invention. - The
display module 100 includes asubstrate 200 which may be transparent, aTFT layer 210 formed at one surface of thesubstrate 200, and a plurality ofLED packages 150 arranged to be electrically coupled to theTFT layer 210. The structure that includes both thesubstrate 200 and theTFT layer 210 may be referred to as a 'TFT substrate,' a 'TFT back plane,' or a 'target substrate.' In the embodiments described herein, this structure is referred to as a 'target substrate.' - The plurality of
LED packages 150 are arranged at a predetermined pitch on theTFT layer 210. Thedisplay module 100 further includes ablack matrix 230 formed between each of the plurality of LED packages 150. Thedisplay module 100 may include aprotection layer 240 covering the plurality ofLED packages 150 and theblack matrix 230. The protection layer may be formed of a transparent material. - The plurality of
LED packages 150 may form a display pixel. The plurality ofLED packages 150 may include at least two or more micro LEDs 131,132 and 133 emitting light of different colors from one another, and aconnection substrate 110 electrically coupling the micro LEDs 131,132 and 133 and theTFT layer 210. Each of the micro LEDs 131,132 and 133 may be a sub pixel forming one display pixel. - The
connection substrate 110 may be a part of a transfer substrate 160 (shown inFIG. 8 ). Specifically, the plurality of micro LEDs epi grown on the epi substrate may be conveyed to the transfer substrate at a predetermined pitch. Here, the predetermined pitch may be different from the above-described predetermined pitch in which the plurality ofLED packages 150 are arranged on theTFT layer 210. - The plurality of micro LEDs conveyed to the transfer substrate may be arranged in a predetermined pattern. The pattern may use a predetermined number of micro LEDs as sub pixels to form a single display pixel.
- Accordingly, when the transfer substrate arranged with the plurality of micro LEDs are cut to a size corresponding to approximately a single display pixel, the
LED package 150 including theconnection substrate 110 with the plurality of micro LEDs 131,132 and 133 that form a signal display pixel and the micro LEDs electrically coupled to theconnection substrate 110 may be manufactured. - The
connection substrate 110 is formed with afirst wiring 111 electrically connected to the plurality of micro LEDs 131,132 and 133 on the one surface of theconnection substrate 110. Theconnection substrate 110 is also formed with asecond wiring 113 electrically connected to theTFT layer 210 on the opposite surface of the connection substrate 110 (a surface opposite from the one surface). - The
first wiring 111 may be formed with a plurality of first electrode pads that connect with each anode and cathode electrodes 131a,131b,132a,132b,133a and 133b (as shown inFIG. 6 ) of the plurality of micro LEDs 131,132 and 133. Thesecond wiring 113 may also be formed with the plurality of first electrode pads that are electrically coupled with the electrode pads of theTFT layer 210. - In addition, the
connection substrate 110 may include at least one viahole 115, and the via hole may be configured with a conductor to electrically couple thefirst wiring 111 and thesecond wiring 113. - In addition, the connection substrate110 may be formed with a side surface wiring at the edge part of the
connection substrate 110 to also electrically couple the first andsecond wirings connection substrate 110 and the conductive material may be removed with a laser beam leaving a portion of the conductive material to be used as side surface wiring. In addition, the side surface wiring may be formed by printing the conductive material to the wiring at a predetermined width. - The plurality of micro LEDs 131,132 and 133, which are sub-pixels mounted on the one
connection substrate 110, have been described as forming a single display pixel, but the embodiment is not limited thereto. The plurality ofmicro LEDs connection substrate 110. -
FIG. 2A is a diagram illustrating an LED package according to an embodiment. According to an embodiment, the LED package 150' may be provided with two display pixels G1 and G2 (i.e., each pixel formed with three micro LEDs 131', 132' and 133') on one connection substrate 110'. Here, each display pixel G1 and G2 may be arranged to be spaced apart at a display pitch P1. The connection substrate 110' of the LED package 150' illustrated inFIG. 2A may, for example, be formed so that the length of the connection substrate is longer than the width of the connection substrate. However, the embodiment is not limited thereto. The connection substrate 110' of the LED package 150' may be formed such that the length and the width are equal to each other. - The plurality of micro LEDs 131', 132' and 133', each of which are sub-pixels, may be operated on the connection substrate 110' with a passive matrix (PM) driving method. The plurality of LED packages 150' may be operated on the target substrate with an active matrix (AM) driving method. The PM driving method is a method for applying voltage consecutively to electrodes that are crossed in horizontal direction and vertical direction. The AM driving method is a method for directly driving each pixel individually when each pixel includes a TFT and an electrode, in which the TFT performs a switch role for each pixel and a capacitor that stores information for a predetermined time (e.g., one frame).
-
FIG. 2B is a diagram illustrating an LED package according to another embodiment. Referring toFIG. 2B , theLED package 150" may be provided with two display pixels G1 and G3 (i.e., each pixel formed with threemicro LEDs 131", 132" and 133") on oneconnection substrate 110". This is similar to the LED package 150' shown inFIG. 2A . Here, each display pixel G1 and G3 may be arranged to be spaced apart at a display pitch P2. In contrast to the LED package 150', theLED package 150" may be formed so that the width of theconnection substrate 110" is longer than the length of theconnection substrate 110". -
FIG. 2C is a diagram illustrating an LED package according to yet another embodiment. Referring toFIG. 2C , theLED package 150‴ may be provided with four display pixels G1, G2, G3 and G4 (i.e., each pixel formed with threemicro LEDs 131‴, 132‴ and 133‴) on oneconnection substrate 110‴. Here, each pixel may be arranged to be spaced apart at predetermined display pitches P1 and P2 in a horizontal direction and a vertical direction, respectively. - In the embodiments illustrated in
FIGS. 2B and2C , the plurality of micro LEDs which are sub-pixels may be operated on the connection substrate with the PM driving method, and the plurality of LED packages may be operated on the target substrate with the AM driving method. - In addition, the LED package according to still another embodiment may be configured so that an odd number of display pixels are arranged on one connection substrate.
- In addition, the number of micro LEDs that form a signal display pixel may be formed of a micro LED emitting at least two different colors. For example, a signal display pixel may be formed by combining micro LEDs of various colors of red/blue, red/green, green/blue, red/blue/green, red/blue/white, red/green/blue/white, red/green/green/white, or the like. However, the combination of micro LEDs of various colors is not limited thereto.
-
FIG. 3 is a block diagram illustrating an LED package transfer device according to an embodiment. - Referring to
FIG. 3 , the LEDpackage transfer device 1 may include atransfer part 10 for transferring the plurality ofLED packages 150 disposed at a predetermined arrangement on the transfer substrate 160 (shown inFIG. 8 ) to the target substrate 200 (shown inFIG. 9 ). The LEDpackage transfer device 1 may also include astage 20 disposed adjacent to thetransfer part 10 and configured to move the target substrate along the X-axis, Y-axis, Z-axis. The LEDpackage transfer device 1 may include amemory 30 configured to store characteristic information of each of the plurality of LED packages and aprocessor 40 configured to identify a position where each of the plurality of LED packages are to be disposed on the transfer substrate based on the stored characteristic information, and control thetransfer part 10 and thestage 20 to transfer the plurality of LED packages to the identified positions. - The
transfer part 10 may simultaneously transfer the predetermined LED packages from the transfer substrate to thetarget substrate 200 through a laser lift off (LLO) method. - The
transfer part 10 may, in order to proceed with the transfer process through the LLO method, include a laser oscillator 300 (shown inFIG. 13 ) for irradiating a laser beam toward the transfer substrate, and a stage capable of moving the transfer substrate along the X-axis, the Y-axis, and the Z-axis and rotating about a Z-axis. - The
stage 20 may clamp thetarget substrate 200 to the top surface of thestage 20 such that thetarget substrate 200 is detachable, and may move thetarget substrate 200 in a clamped state along the X-axis, the Y-axis, and the Z-axis and rotate about the Z-axis. - The
memory 30 may be implemented as at least one of a flash memory type, a read only memory (ROM), a random access memory (RAM), a hard disk type, a multimedia card micro type, or a card type memory (e.g., a secure digital (SD) memory, an extreme digital (XD) memory, etc.). - In addition, the
memory 30 may be electrically coupled with theprocessor 40 to transfer signals and information with theprocessor 40. Thememory 30 may store characteristic information of input or irradiated plurality of LED packages, and theprocessor 40 may access characteristic information stored in thememory 30. - The
processor 40 may control the overall operations of the LEDpackage transfer device 1. That is, theprocessor 40 may be electrically coupled with thetransfer part 10 and thestage 20 and may control each component. - For example, the
processor 40 may control thetransfer part 10 and thestage 20 to convey the plurality of LED packages to a carrier substrate 50 (referring toFIG. 4 ), and convey again from thecarrier substrate 50 to the transfer substrate. - When conveying the plurality of
LED packages 150 from thecarrier substrate 50 to the transfer substrate, the characteristic information of the plurality of LED packages may be used to arrange for a relatively uniform characteristic to be provided throughout the whole area of the transfer substrate. - That is, the
processor 40 may test the characteristics on the plurality of LED packages arranged on the carrier substrate, and analyze the brightness, wavelength, and the like of each micro LED included in the LED package per each area of the carrier substrate. The analyzed result may be stored in thememory 30. - When characteristic testing is completed, the
processor 40 may perform simulations based on the position and combination of each LED package to analyze the brightness and wavelength of thedisplay module 100 and to test the overall uniformity prior to transferring from the carrier substrate to the transfer substrate. - When an optimum arrangement of the plurality of LED packages to be disposed on the transfer substrate through the simulation is determined, the
processor 40 may be further configured to form a data map based the determined optimum arrangement. The data map may be stored in thememory 30. - Based on the data map, the plurality of LED packages on the carrier substrate may be conveyed to the transfer substrate through the pick and place method, the stamping method or the LLO method.
- The
processor 40 may control thetransfer part 10 and thestage 20 to convey the plurality of LED packages arranged on thetransfer substrate 150 to thetarget substrate 200. However, the embodiment is not limited to controlling each and every component of the LEDpackage transfer device 1 by asingle processor 40, but may be controlled by multiple processors. In addition, theprocessor 40 may include one or more of a central processing unit (CPU), a controller, an application processor (AP), a communication processor (CP), and an ARM processor. - The LED package transfer process according to an embodiment will be described sequentially with reference to
FIGS. 4 to 10B below. -
FIG. 4 is a diagram illustrating LED packages on a carrier substrate according to an embodiment. Referring toFIG. 4 , the plurality ofconnection substrates 110 may be arranged on thecarrier substrate 50 at a predetermined distance. In this case, the plurality ofconnection substrates 110 may be arranged in a matrix form. - The
connection substrate 110 is formed with first andsecond wirings second wirings hole 115. - On the one surface of the
connection substrate 110, a plurality of first electrodes (shown inFIG. 6 ) capable of being electrically coupled to each of the plurality of micro LEDs may be formed. Here, the plurality of first electrode may be electrically coupled with thefirst wiring 111. In addition, on the opposite surface of theconnection substrate 110, a plurality of second electrodes capable of being electrically coupled to the TFT layer 210 (referring toFIG. 1 ) may be formed. Here, the plurality of second electrodes may be electrically coupled with thesecond wiring 113. - The
carrier substrate 150 may be formed as a transparent substrate with material, such as quartz. On one surface of thecarrier substrate 50, the plurality ofconnection substrates 110 and anadhesive layer 51 to which the plurality ofconnection substrates 110 are attached may be formed. Here, the plurality ofconnection substrates 110 may be detachably configured on theadhesive layer 51. For example, theadhesive layer 51 may be a pressure sensitive adhesives (PSA). - Referring to
FIG. 5 , an anisotropicconductive film 120 may be laminated to the one surface of the plurality ofconnection substrates 110 arranged on thecarrier substrate 50 so that the plurality of micro LEDs may be attachable in an electrically coupled state to the one surface of theconnection substrate 110. - Referring to
FIG. 6 , the plurality of micro LEDs 131,132 and 133 grown from a growth substrate may be seated on the anisotropicconductive film 120 on the connection substrate after undergoing an isolation process. - The plurality of micro LEDs 131,132 and 133 may be formed in a flip chip form, and each of the anode and cathode electrodes 131a, 131b, 132a, 132b, 133a and 133b may be electrically coupled to each of the plurality of first electrodes formed at each
connection substrate 110. - In this case, the plurality of micro LEDs 131,132 and 133 may be a micro LED emitting red (R), green (G) and blue (B) colors respectively, and three micro LEDs 131,132 and 133 may be sub-pixels forming at display pixel.
- However, an example of the red, green and blue micro LEDs 131,132 and 133 forming one display pixel is provided, the embodiment is not limited thereto, and a display pixel may include two or more micro LEDs emitting at least two different colors. For example, a signal display pixel may be formed by combining micro LEDs of various colors of red/blue, red/green, green/blue, red/blue/green, red/blue/white, red/green/blue/white, red/green/green/white, or the like.
- Referring to
FIG. 7 , after disposing all of the plurality ofmicro LEDS connection substrate 110 on thecarrier substrate 50, the EL test on the plurality ofmicro LEDS - The EL test is a non-destructive inspection method that uses a probe, and may identify the operation characteristics of the micro LED by measuring the electro luminescence characteristics disposed on the carrier substrate.
- After the EL testing as described above, an LED package including a micro LED that indicates a characteristic lower than a predetermined threshold, or a defective micro LED that does not emit light may be determined through a screening process.
- The LED packages that pass the screening process may then be precisely divided by correlated color temperature (CCT) or by light-emitting colors undergoing a color binning process.
- The test result data obtained by undergoing the EL test, the screening process, and the color binning process may be stored in the
memory 30 of the LEDpackage transfer device 1. - The
processor 40 may be configured to generate a shuffle data for the plurality ofLED packages 150 conveyed from thecarrier substrate 50 to thetransfer substrate 160 to be arranged to have a certain overall uniform brightness on thetransfer substrate 160 based on the test result data. - Referring to
FIG. 8 , the plurality ofLED packages 150 on thecarrier substrate 50 may be conveyed to thetransfer substrate 160. In this case, the plurality ofLED packages 150 may be arranged to have a certain overall uniform brightness on thetransfer substrate 160 based on the above-described shuffle data. - The
transfer substrate 160 may be a glass substrate or a silicon wafer. Thetransfer substrate 160 may be formed with theadhesive layer 161 on at the one surface to which the plurality ofLED packages 150 may be attached in an easily separable manner from thetransfer substrate 160. In this case, theadhesive layer 161 may be the pressure sensitive adhesives (PSA). - The plurality of
LED packages 150 conveyed to thetransfer substrate 160 may be exposed with a plurality of micro LEDs and the opposite surface of the connection substrate may be attached to the transfer substrate. - Referring to
FIG. 9 , the plurality ofLED packages 150 disposed on thetransfer substrate 160 are transferred to thetarget substrate 200. Here, because the plurality of micro LEDs 131,132 and 133 are in an exposed state, the plurality ofLED packages 150 may be transferred from thetransfer substrate 160 to thetarget substrate 200 through the pick and place transfer process or the stamping transfer process. - By transferring the plurality of
LED packages 150 to a predetermined position of thetarget substrate 200, a basic structure of thedisplay module 100 may be formed. - Referring to
FIG. 10A , according to the invention, thedisplay module 100 forms ablack matrix 230 between each of the plurality ofLED packages 150 on theTFT layer 210. Theblack matrix 230 blocks light leakage from a peripheral area of each LED package adjacent to one another to improve contrast ratio. - Referring to
FIG. 10B , after disposing theblack matrix 230 in the display module, amolding part 241 is formed to protect the plurality ofLED packages 150 and theblack matrix 230 of thedisplay module 100. Themolding part 241 may be a transparent resin material. In addition, although not illustrated in the drawings, a touch screen may be stacked on themolding part 241. - After forming the
black matrix 230 in thedisplay module 100, aprotection layer 240 covering both the plurality ofLED packages 150 and theblack matrix 230 may be formed (as shown inFIG. 1 ) on top of the above-describedmolding part 241 to protect the plurality of LED packages and the black matrix. In this case, after forming themolding part 241 to cover both the plurality ofLED packages 150 and theblack matrix 230, theprotection layer 240 or the touch screen may be stacked on themolding part 241. - In the pick and place transfer process or the stamping transfer process applied as the transfer of the LED package, the picker after picking the plurality of LED packages from the transfer substrate may move the plurality of LED packages toward the target substrate side to place the plurality of LED packages to a predetermined position of the target substrate.
- The LED package transfer process according to another embodiment may be carried out through a laser transfer process.
- In the case of the lasertransfer process, unlike the pick and place transfer process or the stamping transfer process, a picker is not used and transfer is carried out using a laser beam. Further, in the laser transfer process, one surface of the transfer substrate with the plurality of LED packages disposed may be disposed to face the one surface of the target substrate to which the plurality of LED packages may be transferred, and the transfer substrate may be positioned between the laser oscillator irradiating a laser beam and the target substrate.
- In order to manufacture a transfer substrate appropriate for the laser transfer process, a few processes may be added to the manufacturing process of the transfer substrate applicable to the pick and place transfer process or the stamping transfer process, and the embodiment will be described in detail herein below.
-
FIGS. 11 to 14 are diagrams illustrating sequentially a manufacturing process of a display module including an LED package according to an embodiment. - In
FIG. 11 , the plurality ofLED packages 150 disposed on thecarrier substrate 50 may be transferred to anadditional carrier substrate 170 to have an overall uniform brightness based on the above-described shuffle data. In this case, the plurality ofLED packages 150 may be formed by attaching the opposite surface of the connection substrate to which micro LEDs have not been disposed to anadditional carrier substrate 170. - The
additional carrier substrate 170 may be formed of a transparent material for the plurality ofLED packages 150 to be conveyed to atransfer substrate 180 by a laser beam. - Referring to
FIG. 12 , in order to convey the plurality of LED packages of theadditional carrier substrate 170 to thetransfer substrate 180, theadditional carrier substrate 170 and thetransfer substrate 180 may be disposed to face each other. In this case, the plurality of LEDs provided in the plurality of LED packages of theadditional carrier substrate 170 may be placed in close contact to the one surface of thetransfer substrate 180. - In the state described above, when irradiating a laser beam to the opposite surface (i.e., the surface where the LED package is not disposed) of the
additional carrier substrate 170, the plurality ofLED packages 150 may separate from anadhesive layer 171 of theadditional carrier substrate 170 due to the heat of the laser beam and may attach to anadhesive layer 181 of thetransfer substrate 180. - The plurality of
LED packages 150 transferred to theadditional carrier substrate 170 may be in a state in which the plurality of micro LEDs are in contact with theadhesive layer 181 of thetransfer substrate 180. - The
adhesive layer 171 of theadditional carrier substrate 170 and theadhesive layer 181 of thetransfer substrate 180 may be pressure sensitive adhesives (PSA). - The
transfer substrate 180 may be formed of a transparent material to convey the plurality ofLED packages 150 to thetarget substrate 200 by a laser beam. - Referring to
FIG. 13 , in order to convey the plurality ofLED packages 150 on thetransfer substrate 180 to thetarget substrate 200, thetransfer substrate 180 may be configured to face thetarget substrate 200. In this case, thetransfer substrate 180 may be configured such that the plurality ofLED packages 150 face the surface to be transferred on thetarget substrate 200. - A
mask 190 may be disposed on the opposite surface (i.e., the surface where the LED package is not disposed) of thetransfer substrate 180. - The
mask 190 may limit an irradiation area of the laser beam irradiated toward thetransfer substrate 180 from thelaser oscillator 300. Here, themask 190 may be provided with a plurality ofopenings 191 for laser beam to pass therethrough. - The
transfer substrate 180 and thetarget substrate 200 may be set to the transfer position by a separate stage in an X-Y plane movement, respectively. - When the laser beam is irradiated toward the
transfer substrate 180, the laser beam that passed theopening 191 of themask 190 may then transmit to thetransfer substrate 180 and heat theadhesive layer 181. - Referring to
FIG. 14 , theLED package 150 positioned at an area irradiated by the laser beam in thetransfer substrate 180 may be separated from theadhesive layer 181 of thetransfer substrate 180 and transferred to theTFT layer 210. In addition, if the laser beam is irradiated using a line scan method, the plurality of LED packages may be transferred to theTFT layer 210 substantially at the same time (i.e., consecutively at a very short time interval). - The
LED package 150 transferred to theTFT layer 210 may be electrically coupled with each of the electro pads provided on theTFT layer 210 which is disposed on the opposite surface of the connection substrate. - The present invention is defined by the appended claims.
Claims (11)
- A display module (100), comprising:a substrate (200);a thin film transistor (TFT) layer (210) disposed on a surface of the substrate (200);a plurality of LED packages (150) comprising a connection substrate (110) and a plurality of LEDs (131-133) disposed on a first surface of the connection substrate (110);a wiring configured to electrically connect the TFT layer (210) and the plurality of LEDs (131-133),wherein the wiring comprises a first wiring (111) for electrically coupling with the plurality of LEDs (131-133) on the first surface of the connection substrate (110), and a second wiring (113) for electrically coupling with the TFT layer (210) on a second surface of the connection substrate (110); andcharacterised in thata black matrix (230) is formed between each of the plurality of LED packages (150) on the TFT layer (210);the display module further comprises a molding part (241) configured to cover the plurality of LED packages (150) and the black matrix (230), andthe molding part (241) covers the TFT layer (210) exposed between the plurality of LED packages (150).
- The display module of claim 1, wherein an electrode of each of the plurality of LEDs (131-133) is electrically coupled with the first wiring (111) through a first electrode pad formed on the first surface of the connection substrate (110), and
wherein an electrode on the TFT layer (210) is electrically coupled with the second wiring (113) through a second electrode pad formed on the second surface of the connection substrate (110). - The display module of claim 2, wherein each of the plurality of LED packages (150) is electrically coupled to a common electrode or individual electrodes formed on the TFT layer (210).
- The display module of claim 1, wherein the first wiring (111) and the second wiring (113) are electrically coupled to each other through at least one via hole (115).
- The display module of claim 1, wherein the connection substrate (110) further comprises at least one wiring layer.
- A manufacturing method of a display module (100), the method comprising:separating a connection substrate (110) formed with a wiring layer at a predetermined size;transferring a plurality of LEDs (131-133) onto the separated connection substrate (110);transferring an LED package (150) comprising the separated connection substrate (110) and the plurality of LEDs (131-133) mounted on the separated connection substrate (110) to a TFT layer (210) formed on a target substrate (200);characterised by forming a black matrix (230) between each of a plurality of LED packages (150) disposed at a predetermined pitch to the TFT layer (210) of the target substrate (200), andforming a molding part (241) on the connection substrate (110) to cover the plurality of LED packages (150), the black matrix (230), and the TFT layer (210) exposed between the plurality of LED packages (150).
- The manufacturing method of claim 6, further comprising forming the LED package (150) by mounting the plurality of LEDs (131-133) to the connection substrate (110) after the connection substrates (110) is transferred onto a carrier substrate (50).
- The manufacturing method of claim 7, further comprising, prior to the transferring of the LED package (150), transferring the LED package (150) from the carrier substrate (50) to a transfer substrate (160, 180).
- The manufacturing method of claim 8, wherein the transferring the LED package (150) to the TFT layer (210) formed on the target substrate (200) further comprises:picking the LED package (150) from the transfer substrate (160) by a picker;moving the picker to a predetermined position; anddepositing the LED package (150) to a position corresponding to the predetermined position on the TFT layer (210) of the target substrate (200).
- The manufacturing method of claim 8, further comprising:prior to the transferring of the LED package (150) to the TFT layer (210) of the target substrate (200), transferring the LED package (150) from the carrier substrate (50) to the transfer substrate (180) by way of an additional carrier substrate (170) configured to face the transfer substrate (180); andlaser transferring the LED package (150) to the TFT layer (210) of the target substrate (200) from the transfer substrate (180).
- The manufacturing method of claim 6, further comprising:
stacking a protection layer (240) on the molding part (241).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020190090374A KR20210012516A (en) | 2019-07-25 | 2019-07-25 | Display module having led packages and manufaturing method as the same |
Publications (3)
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EP3770963A1 EP3770963A1 (en) | 2021-01-27 |
EP3770963B1 true EP3770963B1 (en) | 2023-08-02 |
EP3770963C0 EP3770963C0 (en) | 2023-08-02 |
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US (1) | US11462523B2 (en) |
EP (1) | EP3770963B1 (en) |
KR (1) | KR20210012516A (en) |
CN (1) | CN112289784A (en) |
WO (1) | WO2021015407A1 (en) |
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JP7339518B2 (en) * | 2019-09-18 | 2023-09-06 | 日亜化学工業株式会社 | Method for manufacturing light-emitting module |
US11664355B2 (en) * | 2019-12-02 | 2023-05-30 | Seoul Semiconductor Co., Ltd. | Display apparatus |
EP4199095A4 (en) | 2021-02-04 | 2024-04-24 | Samsung Electronics Co Ltd | Display device and method for manufacturing same |
WO2022169286A2 (en) * | 2021-02-04 | 2022-08-11 | 삼성전자주식회사 | Display device and method for manufacturing same |
TWI751953B (en) * | 2021-06-08 | 2022-01-01 | 聯嘉光電股份有限公司 | Light-emitting diode package with multiple test terminals and parallel elements |
WO2023120898A1 (en) * | 2021-12-21 | 2023-06-29 | 한국광기술원 | Micro led package, display having same, and method for manufacturing display |
CN115763453A (en) * | 2022-10-21 | 2023-03-07 | 武汉华星光电半导体显示技术有限公司 | Spliced display panel and display terminal |
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JP4511307B2 (en) * | 2004-02-10 | 2010-07-28 | セイコーエプソン株式会社 | Gate insulating film, semiconductor element, electronic device and electronic equipment |
JP5196262B2 (en) | 2008-09-30 | 2013-05-15 | ソニー株式会社 | Manufacturing method of display device |
CN110010750B (en) | 2014-06-18 | 2021-11-09 | 艾克斯展示公司技术有限公司 | Micro-assembly LED display |
JP6449760B2 (en) | 2015-12-18 | 2019-01-09 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
WO2017146477A1 (en) * | 2016-02-26 | 2017-08-31 | 서울반도체주식회사 | Display apparatus and method for producing same |
KR102471687B1 (en) | 2016-02-26 | 2022-11-28 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Light emitting module and display device |
US10340256B2 (en) * | 2016-09-14 | 2019-07-02 | Innolux Corporation | Display devices |
KR101899651B1 (en) | 2016-09-27 | 2018-09-17 | 광주과학기술원 | Micro-LED Array and Method of forming the same |
US9935153B1 (en) | 2016-11-07 | 2018-04-03 | Samsung Electronics Co., Ltd. | Light emitting diode panel and manufacturing method thereof |
US11756937B2 (en) * | 2017-02-13 | 2023-09-12 | Seoul Semiconductor Co., Ltd. | Display apparatus and method of manufacturing the same |
CN106941108B (en) * | 2017-05-23 | 2019-09-17 | 深圳市华星光电技术有限公司 | Micro- LED display panel and preparation method thereof |
JP2019015899A (en) | 2017-07-10 | 2019-01-31 | 株式会社ブイ・テクノロジー | Display device manufacturing method, chip component transferring method, and transferring member |
KR102514755B1 (en) * | 2017-07-10 | 2023-03-29 | 삼성전자주식회사 | Micro led display and mamufacturing method thereof |
TWI632673B (en) * | 2017-07-11 | 2018-08-11 | 錼創科技股份有限公司 | Micro light-emitting device and display apparatus |
JP2019020924A (en) | 2017-07-13 | 2019-02-07 | キヤノン株式会社 | Apparatus and method for image processing and imaging apparatus |
DE102017123290A1 (en) | 2017-10-06 | 2019-04-11 | Osram Opto Semiconductors Gmbh | Light-emitting component, display device and method for producing a display device |
KR102558699B1 (en) * | 2017-12-08 | 2023-07-21 | 엘지디스플레이 주식회사 | Micro led display device whitout bezel |
KR102569728B1 (en) | 2017-12-08 | 2023-08-23 | 엘지디스플레이 주식회사 | Micro led display device whitout bezzel |
KR101953797B1 (en) * | 2017-12-26 | 2019-03-04 | 엘지디스플레이 주식회사 | Method of fabricating micro led display device |
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2019
- 2019-07-25 KR KR1020190090374A patent/KR20210012516A/en not_active Application Discontinuation
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2020
- 2020-05-27 EP EP20176932.0A patent/EP3770963B1/en active Active
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- 2020-05-28 US US16/886,128 patent/US11462523B2/en active Active
- 2020-07-16 CN CN202010689257.8A patent/CN112289784A/en active Pending
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US20210028156A1 (en) | 2021-01-28 |
KR20210012516A (en) | 2021-02-03 |
EP3770963C0 (en) | 2023-08-02 |
US11462523B2 (en) | 2022-10-04 |
EP3770963A1 (en) | 2021-01-27 |
WO2021015407A1 (en) | 2021-01-28 |
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