JP2019015899A - Display device manufacturing method, chip component transferring method, and transferring member - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims description 53
- 239000000758 substrate Substances 0.000 claims abstract description 182
- 239000002245 particle Substances 0.000 claims abstract description 43
- 239000000853 adhesive Substances 0.000 claims description 32
- 230000001070 adhesive effect Effects 0.000 claims description 32
- 229920001169 thermoplastic Polymers 0.000 claims description 13
- 229920005992 thermoplastic resin Polymers 0.000 claims description 13
- 239000004416 thermosoftening plastic Substances 0.000 claims description 13
- 238000009835 boiling Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims 1
- 238000007906 compression Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 27
- 239000010408 film Substances 0.000 description 24
- 239000012790 adhesive layer Substances 0.000 description 22
- 238000010586 diagram Methods 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 2
- 238000013518 transcription Methods 0.000 description 2
- 230000035897 transcription Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
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Abstract
Description
本発明は、表示装置の製造方法、チップ部品の転写方法、および転写部材に関する。 The present invention relates to a display device manufacturing method, a chip component transfer method, and a transfer member.
次世代の表示装置として、マイクロＬＥＤディスプレイが注目されている。マイクロＬＥＤディスプレイとは、個々の画素が、微細な発光ダイオード（以下、ＬＥＤという）チップであり、このＬＥＤチップがディスプレイ基板の表面に高密度に敷き詰められた表示装置である。このようなマイクロＬＥＤディスプレイの製造においては、ディスプレイ基板の表面に対して、ＬＥＤチップを精度よく確実に配列させることが重要である。 As a next-generation display device, a micro LED display has attracted attention. A micro LED display is a display device in which individual pixels are fine light-emitting diode (hereinafter referred to as LED) chips, and the LED chips are laid on the surface of a display substrate at a high density. In manufacturing such a micro LED display, it is important to accurately and reliably arrange the LED chips on the surface of the display substrate.
チップ部品を搬送して基板表面上へ配置させる転写技術としては、例えば、特許文献１に開示された転写ツールを用いる技術が知られている。この転写ツールは、チップ部品を捕捉する静電転写ヘッドアレイを備えている。実際のマイクロＬＥＤディスプレイの製造においては、電子部品であるＬＥＤチップに対して、静電破壊などの影響の少ない転写方法が要望されている。 For example, a technique using a transfer tool disclosed in Patent Document 1 is known as a transfer technique for conveying chip components and arranging them on the substrate surface. The transfer tool includes an electrostatic transfer head array that captures chip components. In the actual manufacture of a micro LED display, there is a demand for a transfer method with less influence such as electrostatic breakdown on the LED chip which is an electronic component.
このようなＬＥＤチップの転写方法としては、以下の（１）〜（４）の工程を備える方法が提案されている。
（１）先ず、仮基板（トレー）の表面に設けられた仮基板側接着剤層上に、多数のＬＥＤチップを配置させる。
（２）次に、転写用プレートの表面に設けられた転写用接着剤層にＬＥＤチップを貼り付けた後に、転写用プレートを持ち上げる。これによって、ＬＥＤチップが仮基板の仮基板側接着剤層から剥離される。すなわち、ＬＥＤチップが仮基板側から転写用プレート側へ移る（転写される）。
（３）次に、ＴＦＴ（Thin Film transistor）基板を用意する。このＴＦＴ基板のＬＥＤチップを搭載させる表面には、異方性導電フィルムを配置しておく。上記の転写用プレートをＴＦＴ基板と対向するように配置させた後、転写用プレートとＴＦＴ基板とを近接させてＬＥＤチップを異方性導電フィルムに当接させる。
（４）その後、転写用プレートとＴＦＴ基板を挟んで熱圧着を行い、ＬＥＤチップをＴＦＴ基板側の駆動回路に導通させた後、転写用プレートの転写用接着剤層を、ＬＥＤチップから剥離させる。この工程では、ＬＥＤチップが転写用基板から駆動回路基板へ転写される。
As such an LED chip transfer method, a method including the following steps (1) to (4) has been proposed.
(1) First, a large number of LED chips are arranged on a temporary substrate-side adhesive layer provided on the surface of the temporary substrate (tray).
(2) Next, after the LED chip is attached to the transfer adhesive layer provided on the surface of the transfer plate, the transfer plate is lifted. Thereby, the LED chip is peeled from the temporary substrate side adhesive layer of the temporary substrate. That is, the LED chip moves (transfers) from the temporary substrate side to the transfer plate side.
(3) Next, a thin film transistor (TFT) substrate is prepared. An anisotropic conductive film is disposed on the surface of the TFT substrate on which the LED chip is mounted. After the transfer plate is arranged to face the TFT substrate, the LED plate is brought into contact with the anisotropic conductive film by bringing the transfer plate and the TFT substrate close to each other.
(4) Thereafter, thermocompression bonding is performed with the transfer plate and the TFT substrate sandwiched between the LED chip and the TFT substrate side drive circuit, and then the transfer adhesive layer of the transfer plate is peeled off from the LED chip. . In this step, the LED chip is transferred from the transfer substrate to the drive circuit substrate.
上記のＬＥＤチップの転写方法では、仮基板側接着剤層と、転写用接着剤層と、異方性導電フィルムと、の３つの接着剤層間での相対的な接着強度を以下のように設定する必要がある。すなわち、転写用接着剤層とＬＥＤチップとの接着力は、仮基板側接着剤層とＬＥＤチップとの接着力よりも大きく設定する必要がある。異方性導電フィルムとＬＥＤチップとの接着力は、転写用接着剤層とＬＥＤチップとの接着力よりも大きく設定する必要がある。 In the above LED chip transfer method, the relative adhesive strength between the three adhesive layers of the temporary substrate side adhesive layer, the transfer adhesive layer, and the anisotropic conductive film is set as follows: There is a need to. That is, the adhesive force between the transfer adhesive layer and the LED chip needs to be set larger than the adhesive force between the temporary substrate side adhesive layer and the LED chip. The adhesive force between the anisotropic conductive film and the LED chip needs to be set larger than the adhesive force between the transfer adhesive layer and the LED chip.
このように上記の転写方法では、仮基板側接着剤層、転写用接着剤層、および異方性導電フィルムのそれぞれに用いられる接着剤材料の接着力のばらつきにより、ＬＥＤチップの転写が首尾よく行われないという課題がある。接着剤材料の接着力のばらつきは、接着剤の製造ロット毎の性能のぶれ、接着剤層の成膜状態、経時的変化などに起因する。したがって、上記の転写方法を用いて表示装置を製造する場合には、歩留まりが低いという課題がある。また、上記の転写方法を用いた表示装置の製造方法では、転写用接着剤層の接着力が異方性導電フィルムと同等の接着力を有する場合に、異方性導電フィルムからＬＥＤチップが離脱する問題や、異方性導電フィルム上でＬＥＤチップが位置ずれを起こすなどの問題が生じる。 As described above, in the above transfer method, the transfer of the LED chip is successfully performed due to the variation in the adhesive force of the adhesive material used for each of the temporary substrate side adhesive layer, the transfer adhesive layer, and the anisotropic conductive film. There is a problem that it is not done. Variations in the adhesive strength of the adhesive material are caused by fluctuations in the performance of each production lot of the adhesive, the film formation state of the adhesive layer, changes with time, and the like. Therefore, when a display device is manufactured using the above transfer method, there is a problem that the yield is low. Further, in the method of manufacturing a display device using the above transfer method, the LED chip is detached from the anisotropic conductive film when the adhesive force of the transfer adhesive layer has the same adhesive force as that of the anisotropic conductive film. And problems such as the LED chip being displaced on the anisotropic conductive film.
本発明は、上記の課題に鑑みてなされたものであって、チップ部品を確実に駆動回路基板の所望の位置に転写でき、しかも歩留まりの高い表示装置の製造方法を提供することを目的とする。本発明は、チップ部品を駆動回路基板の所望の位置に確実に転写できる転写方法を提供することを目的とする。また、本発明は、チップ部品の転写を確実に行える転写部材を提供することを目的とする。 The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a method of manufacturing a display device that can reliably transfer a chip component to a desired position on a drive circuit board and has a high yield. . An object of the present invention is to provide a transfer method capable of reliably transferring a chip component to a desired position on a drive circuit board. Another object of the present invention is to provide a transfer member that can reliably transfer a chip component.
上述した課題を解決し、目的を達成するために、本発明の第１の態様は、表示装置の製造方法であって、画素を構成するチップ部品を仮基板上に配置させる工程と、熱可塑性接着剤に熱膨張性粒子を分散させた転写部材でなる転写部材層を基板表面に沿って設けた転写用基板と、上記仮基板と、を近接させて上記チップ部品に上記転写部材層を接着する工程と、上記転写用基板と上記仮基板とを離間させて、上記チップ部品を上記仮基板側から剥離させて上記転写用基板側へ転写する工程と、熱可塑性を有する異方性導電フィルムが表面に配置された駆動回路基板と上記転写用基板とを近接させて、上記チップ部品に上記異方性導電フィルムを接触させる工程と、上記転写用基板と上記駆動回路基板とを熱圧着して、上記熱膨張性粒子を熱膨張させた後、上記転写用基板と上記駆動回路基板とを離間させて、上記チップ部品から上記転写部材層を剥離して、上記チップ部品を駆動回路基板側へ転写する工程と、を備える。 In order to solve the above-described problems and achieve the object, a first aspect of the present invention is a method for manufacturing a display device, the step of disposing chip components constituting pixels on a temporary substrate, and thermoplasticity. Adhering the transfer member layer to the chip component by bringing the transfer substrate having a transfer member layer formed of a transfer member in which thermally expandable particles are dispersed in an adhesive along the substrate surface and the temporary substrate close to each other Separating the transfer substrate and the temporary substrate, separating the chip component from the temporary substrate side and transferring it to the transfer substrate side, and an anisotropic conductive film having thermoplasticity A step of bringing the drive circuit board disposed on the surface close to the transfer substrate and bringing the anisotropic conductive film into contact with the chip component, and thermocompression bonding the transfer substrate and the drive circuit board. The thermally expandable particles are thermally expanded. After, by separating the substrate and the driving circuit substrate for a transfer, it is peeled off the transfer member layer from the chip component, and a step of transferring the chip components to the drive circuit substrate.
第１の態様においては、上記熱膨張性粒子が、熱可塑性樹脂で外殻が形成されたカプセル状の球体であり、内部に低沸点材料が封止されていることが好ましい。 In the first aspect, it is preferable that the thermally expandable particles are capsule-shaped spheres in which an outer shell is formed of a thermoplastic resin, and a low boiling point material is sealed inside.
第１の態様においては、上記熱膨張性粒子が、熱可塑性樹脂で外殻が形成されたカプセル状の球体であり、内部に気体が封止されていることが好ましい。 In the first aspect, it is preferable that the thermally expandable particle is a capsule-like sphere in which an outer shell is formed of a thermoplastic resin, and a gas is sealed inside.
第１の態様においては、上記チップ部品が、マイクロＬＥＤチップであることが好ましい。 In the first aspect, the chip component is preferably a micro LED chip.
第１の態様においては、上記異方性導電フィルムの上に、熱可塑性樹脂でなる保護樹脂層を積層することが好ましい。 In the first aspect, it is preferable to laminate a protective resin layer made of a thermoplastic resin on the anisotropic conductive film.
本発明の第２の態様は、チップの転写方法であって、チップ部品を仮基板上に配置させる工程と、熱可塑性接着剤に熱膨張性粒子を分散させた転写部材でなる転写部材層を基板表面に沿って設けた転写用基板と上記仮基板とを近接させて上記チップ部品に上記転写部材層を接着する工程と、上記転写用基板と上記仮基板とを離間させて、上記チップ部品を上記仮基板側から剥離させて上記転写用基板側へ転写する工程と、熱可塑性を有する異方性導電フィルムが表面に配置された駆動回路基板と上記転写用基板とを近接させて上記チップ部品に上記異方性導電フィルムを接触させる工程と、上記転写用基板と上記駆動回路基板とを熱圧着して、上記熱膨張性粒子を熱膨張させた後、上記転写用基板と上記駆動回路基板とを離間させて、上記チップ部品から上記転写部材層を剥離させて上記チップ部品を駆動回路基板側へ転写する工程と、を備える。 According to a second aspect of the present invention, there is provided a chip transfer method comprising: a step of disposing a chip component on a temporary substrate; and a transfer member layer comprising a transfer member in which thermally expandable particles are dispersed in a thermoplastic adhesive. A step of adhering the transfer member layer to the chip component by bringing the transfer substrate provided along the substrate surface close to the temporary substrate, and separating the transfer substrate from the temporary substrate to form the chip component The substrate from the temporary substrate side and transferred to the transfer substrate side, and the driving circuit substrate on which the thermoplastic anisotropic conductive film is disposed on the surface and the transfer substrate are brought close to the chip. The step of bringing the anisotropic conductive film into contact with a component, the transfer substrate and the drive circuit substrate are thermocompression bonded to thermally expand the thermally expandable particles, and then the transfer substrate and the drive circuit Separate the board from the From flop parts by peeling the transfer member layer and a step of transferring the chip components to the drive circuit substrate.
第２の態様においては、上記熱膨張性粒子が、熱可塑性樹脂で外殻が形成されたカプセル状の球体であり、内部に低沸点材料が封止されていることが好ましい。 In the second aspect, it is preferable that the thermally expandable particles are capsule-shaped spheres in which an outer shell is formed of a thermoplastic resin, and a low-boiling point material is sealed inside.
第２の態様においては、上記熱膨張性粒子が、熱可塑性樹脂で外殻が形成されたカプセル状の球体であり、内部に気体が封止されていることが好ましい。 In the second aspect, it is preferable that the thermally expandable particles are capsule-shaped spheres in which an outer shell is formed of a thermoplastic resin, and a gas is sealed inside.
本発明の第３の態様は、チップ部品の接着と前記チップ部品の剥離を行って前記チップ部品の転写に用いられる転写部材であって、熱可塑性接着剤に熱膨張性粒子を分散させてなり、上記熱膨張性粒子は、熱可塑性樹脂で外殻が形成されたカプセル状の球体であり、内部に気体または低沸点材料が封止されていることが好ましい。 According to a third aspect of the present invention, there is provided a transfer member used for transferring the chip component by bonding the chip component and peeling the chip component, wherein thermally expandable particles are dispersed in a thermoplastic adhesive. The thermally expandable particles are preferably capsule-shaped spheres having an outer shell formed of a thermoplastic resin, and a gas or a low boiling point material is preferably sealed inside.
本発明に係る表示装置の製造方法によれば、チップ部品を確実に駆動回路基板の所望の位置に転写して画素配置の精度が高く、しかも製造歩留まりの高い表示装置の製造方法を実現できる。本発明に係るチップ部品の転写方法によれば、チップ部品を確実に駆動回路基板の所望の位置に転写できる転写方法を実現できる。本発明に係る転写部材よれば、チップ部品の転写を確実に行うことが可能となる。 According to the method for manufacturing a display device according to the present invention, it is possible to realize a method for manufacturing a display device with high pixel placement accuracy and high manufacturing yield by reliably transferring the chip component to a desired position on the drive circuit board. According to the chip component transfer method of the present invention, it is possible to realize a transfer method capable of reliably transferring the chip component to a desired position on the drive circuit board. According to the transfer member of the present invention, it is possible to reliably transfer the chip component.
以下に、本発明の実施の形態に係る表示装置の製造方法、チップ部品の転写方法、および転写部材の詳細を図面に基づいて説明する。但し、図面は模式的なものであり、各部材の寸法や寸法の比率や形状などは現実のものと異なることに留意すべきである。また、図面相互間においても互いの寸法の関係や比率や形状が異なる部分が含まれている。 Details of a display device manufacturing method, a chip component transfer method, and a transfer member according to an embodiment of the present invention will be described below with reference to the drawings. However, it should be noted that the drawings are schematic, and the dimensions, ratios and shapes of the members are different from actual ones. In addition, the drawings include portions having different dimensional relationships, ratios, and shapes.
［実施の形態］
以下、図１〜図９を用いて、本実施の形態に係る表示装置の製造方法を説明する。なお、本実施の形態は、本発明に係るチップ部品の転写方法および転写部材を適用した表示装置の製造方法である。本実施の形態では、表示装置としては、マイクロＬＥＤディスプレイを適用する。
[Embodiment]
Hereinafter, the manufacturing method of the display device according to the present embodiment will be described with reference to FIGS. The present embodiment is a method for transferring a chip component according to the present invention and a method for manufacturing a display device to which a transfer member is applied. In this embodiment, a micro LED display is applied as the display device.
先ず、図１に示すように、仮基板１を用意する。仮基板１は、一方の基板表面に、接着力の小さい仮基板側接着剤層２が設けられている。この仮基板１には、多数のチップ部品３を、所定の配置間隔で配列するように配置する。なお、本実施の形態で用いるチップ部品３は、表示装置の画素を構成するマイクロＬＥＤチップである。仮基板１は、その表面に多数のチップ部品３を配置する配置領域が、マイクロＬＥＤディスプレイの表示領域と同等の縦横寸法に設定されている。 First, as shown in FIG. 1, a temporary substrate 1 is prepared. The temporary substrate 1 is provided with a temporary substrate side adhesive layer 2 having a small adhesive force on one substrate surface. A large number of chip components 3 are arranged on the temporary substrate 1 so as to be arranged at a predetermined arrangement interval. Note that the chip component 3 used in the present embodiment is a micro LED chip that constitutes a pixel of a display device. The temporary substrate 1 has an arrangement area in which a large number of chip components 3 are arranged on the surface thereof set to vertical and horizontal dimensions equivalent to the display area of the micro LED display.
本実施の形態では、図１に示すように、チップ部品３の下面に、電極３１，３２が下方へ向けて突出するように形成されている。これら電極３１，３２は、仮基板側接着剤層２に小さい接着力で接着されている。なお、チップ部品３の電極は、チップ部品３の下面に露出するものであれば、図示する電極３１，３２の配置位置に限定されるものではない。 In the present embodiment, as shown in FIG. 1, the electrodes 31 and 32 are formed on the lower surface of the chip component 3 so as to protrude downward. These electrodes 31 and 32 are bonded to the temporary substrate side adhesive layer 2 with a small adhesive force. The electrodes of the chip component 3 are not limited to the arrangement positions of the electrodes 31 and 32 shown in the figure as long as they are exposed on the lower surface of the chip component 3.
次に、図１に示すように、転写用基板５を用意する。転写用基板５は、一方の基板表面に沿って転写部材層４が設けられている。転写部材層４は、熱可塑性接着剤４１に熱膨張性粒子４２を分散させた転写部材４３でなる。なお、この熱可塑性接着剤４１は、仮基板１側に設けた仮基板側接着剤層２を構成する接着剤よりも十分に接着力が大きく設定されている。 Next, as shown in FIG. 1, a transfer substrate 5 is prepared. The transfer substrate 5 is provided with a transfer member layer 4 along one substrate surface. The transfer member layer 4 is composed of a transfer member 43 in which thermally expandable particles 42 are dispersed in a thermoplastic adhesive 41. The thermoplastic adhesive 41 is set to have a sufficiently larger adhesive force than the adhesive constituting the temporary substrate side adhesive layer 2 provided on the temporary substrate 1 side.
ここで、図９を用いて熱膨張性粒子４２について説明する。図９は、本実施の形態に係る熱膨張性粒子４２の通常の状態と膨張した状態を示す断面説明図である。熱膨張性粒子４２は球状体であり、外殻４４が熱可塑性樹脂でカプセル状に形成されている。外殻４４の内部には、空気４５が封止されている。 Here, the thermally expandable particles 42 will be described with reference to FIG. FIG. 9 is a cross-sectional explanatory view showing a normal state and an expanded state of the thermally expandable particles 42 according to the present embodiment. The thermally expandable particle 42 is a spherical body, and the outer shell 44 is formed of a thermoplastic resin in a capsule shape. Air 45 is sealed inside the outer shell 44.
なお、図９に示す熱膨張性粒子４２では、外殻４４の内部の内部に空気４５を封止したが、空気以外の気体や低沸点溶剤を封止してもよい。なお、低沸点溶剤を用いる場合は、外殻４４の内部に少量の低沸点溶剤を封止すればよい。 In the thermally expandable particle 42 shown in FIG. 9, the air 45 is sealed inside the outer shell 44, but a gas other than air or a low boiling point solvent may be sealed. When a low boiling point solvent is used, a small amount of low boiling point solvent may be sealed inside the outer shell 44.
熱膨張性粒子４２を加熱すると、図９の太い矢印の右側に示すように、外殻４４の内部の空気４５または低沸点溶剤が膨張して径寸法が大きくなる。熱膨張性粒子４２が加熱されて膨張した状態から冷めた場合には、収縮して元の小径の熱膨張性粒子４２の状態に戻る。 When the heat-expandable particles 42 are heated, as shown on the right side of the thick arrow in FIG. 9, the air 45 or the low boiling point solvent inside the outer shell 44 expands to increase the diameter. When the heat-expandable particles 42 are heated and cooled from the expanded state, the heat-expandable particles 42 contract and return to the state of the original small-diameter heat-expandable particles 42.
次に、上述した転写用基板５を用いて、仮基板１上のチップ部品３の転写を行う。図２に示すように、転写用基板５と仮基板１とを近接させることで、転写用基板５の転写部材層４を仮基板１上のチップ部品３の上面に接着させる。その後、図３に示すように、転写用基板５と仮基板１とを離間させることにより、チップ部品３を仮基板側接着剤層２から剥離させる。ここで、転写部材層４の接着力は、仮基板側接着剤層２の接着力に比べて大幅に強いため、チップ部品３は仮基板側接着剤層２から容易に剥離される。このようにして、チップ部品３が仮基板１側から転写用基板５側へ転写される。なお、転写用基板５と仮基板１との近接および離間は、転写用基板５に対して仮基板１を移動させるか、仮基板１に対して転写用基板５を移動させる形態のいずれかでもよい。 Next, the chip component 3 on the temporary substrate 1 is transferred using the transfer substrate 5 described above. As shown in FIG. 2, by bringing the transfer substrate 5 and the temporary substrate 1 close to each other, the transfer member layer 4 of the transfer substrate 5 is bonded to the upper surface of the chip component 3 on the temporary substrate 1. Thereafter, as shown in FIG. 3, the chip component 3 is separated from the temporary substrate side adhesive layer 2 by separating the transfer substrate 5 and the temporary substrate 1. Here, since the adhesive force of the transfer member layer 4 is significantly stronger than the adhesive force of the temporary substrate side adhesive layer 2, the chip component 3 is easily peeled from the temporary substrate side adhesive layer 2. In this way, the chip component 3 is transferred from the temporary substrate 1 side to the transfer substrate 5 side. The transfer substrate 5 and the temporary substrate 1 may be brought close to or separated from each other by either moving the temporary substrate 1 relative to the transfer substrate 5 or moving the transfer substrate 5 relative to the temporary substrate 1. Good.
次に、図４に示すように、駆動回路基板としてのＴＦＴ（Thin Film transistor）基板６を用意する。ＴＦＴ基板６には、図示しない駆動回路が形成されている。ＴＦＴ基板６は、チップ部品３を搭載させる表面に、パッド６１，６２が設けられている。これらパッド６１，６２は、チップ部品３の電極３１，３２との接続が図れるように配置されている。ＴＦＴ基板６における、パッド６１，６２が設けられた側の表面には、異方性導電フィルム７を配置する。図４に示すように、転写用基板５をＴＦＴ基板６に対向するように移動させる。 Next, as shown in FIG. 4, a TFT (Thin Film transistor) substrate 6 as a drive circuit substrate is prepared. A driving circuit (not shown) is formed on the TFT substrate 6. The TFT substrate 6 is provided with pads 61 and 62 on the surface on which the chip component 3 is mounted. These pads 61 and 62 are arranged so as to be connected to the electrodes 31 and 32 of the chip component 3. On the surface of the TFT substrate 6 on the side where the pads 61 and 62 are provided, the anisotropic conductive film 7 is disposed. As shown in FIG. 4, the transfer substrate 5 is moved so as to face the TFT substrate 6.
次に、図５に示すように、転写用基板５とＴＦＴ基板６とを近接させて、チップ部品３の電極３１，３２を、異方性導電フィルム７に当接させる。そして、転写用基板５とＴＦＴ基板６に対して、適宜の圧力条件および温度条件にて熱圧着（ホットプレス）を施す。 Next, as shown in FIG. 5, the transfer substrate 5 and the TFT substrate 6 are brought close to each other, and the electrodes 31 and 32 of the chip component 3 are brought into contact with the anisotropic conductive film 7. Then, thermocompression bonding (hot pressing) is performed on the transfer substrate 5 and the TFT substrate 6 under appropriate pressure conditions and temperature conditions.
これに伴って、図６に示すように、電極３１とパッド６１との間、および電極３２とパッド６２との間で、異方性導電フィルム７の図示しない導電性粒子が押圧されて結合して導電領域７１，７２を形成する。したがって、駆動回路側とチップ部品３側が導通する。転写用基板５側では、転写部材層４を構成する熱可塑性接着剤４１が可塑化するとともに熱膨張性粒子４２が熱膨張して大きくなる。 Accordingly, as shown in FIG. 6, conductive particles (not shown) of the anisotropic conductive film 7 are pressed and bonded between the electrode 31 and the pad 61 and between the electrode 32 and the pad 62. Thus, conductive regions 71 and 72 are formed. Therefore, the drive circuit side and the chip component 3 side are electrically connected. On the transfer substrate 5 side, the thermoplastic adhesive 41 constituting the transfer member layer 4 is plasticized and the thermally expandable particles 42 are thermally expanded to increase.
このように熱膨張性粒子４２が大きくなると、転写部材層４の表面が粗面化して、チップ部品３との接着面積が低下し、接着力も低下する。したがって、チップ部品３の上面から転写部材層４を剥離しやすくなる。このため、図７に示すように、転写用基板５とＴＦＴ基板６とを離間させることにより、チップ部品３を転写用基板５の転写部材層４から容易に剥離させることができ、転写が首尾よく行える。 When the thermally expandable particles 42 are increased in this way, the surface of the transfer member layer 4 is roughened, the adhesion area with the chip component 3 is reduced, and the adhesive force is also reduced. Therefore, the transfer member layer 4 is easily peeled from the upper surface of the chip component 3. For this reason, as shown in FIG. 7, by separating the transfer substrate 5 and the TFT substrate 6, the chip component 3 can be easily separated from the transfer member layer 4 of the transfer substrate 5, and the transfer is successful. Well done.
なお、図８に示すように、熱膨張性粒子４２は、温度低下に伴い、収縮して元の体積に戻る。また、熱可塑性接着剤４１も温度低下に伴い加熱前の状態に戻る。このため、転写用基板５を繰り返し使用することができる。 In addition, as shown in FIG. 8, the thermally expansible particle 42 shrink | contracts and returns to the original volume with a temperature fall. Further, the thermoplastic adhesive 41 also returns to the state before heating as the temperature decreases. For this reason, the transfer substrate 5 can be used repeatedly.
本実施の形態に係る表示装置の製造方法によれば、チップ部品３を確実にＴＦＴ基板６の所望の位置に転写してマイクロＬＥＤディスプレイの画素配置の精度を高めることができる。また、本実施の形態に係る表示装置の製造方法よれば、チップ部品３を首尾よく転写できるため、製造歩留まりを高くすることができる。 According to the manufacturing method of the display device according to the present embodiment, it is possible to reliably transfer the chip component 3 to a desired position on the TFT substrate 6 and improve the pixel arrangement accuracy of the micro LED display. Further, according to the manufacturing method of the display device according to the present embodiment, the chip component 3 can be successfully transferred, so that the manufacturing yield can be increased.
以上、本実施の形態に係る表示装置の製造方法に、本発明に係るチップ部品の転写方法を適用して説明した。本実施の形態に係るチップ部品の転写方法は、以下の通りである。 As described above, the chip component transfer method according to the present invention is applied to the method for manufacturing the display device according to the present embodiment. The chip component transfer method according to the present embodiment is as follows.
（チップ部品の転写方法）
本実施の形態に係るチップ部品の転写方法は、チップ部品３を仮基板１上に配置させる工程と、熱可塑性接着剤４１に熱膨張性粒子４２を分散させた転写部材４３でなる転写部材層４を基板表面に沿って設けた転写用基板５と仮基板１とを近接させてチップ部品３に転写部材層４を接着する工程と、転写用基板５と仮基板１とを離間させて、チップ部品３を仮基板１側から剥離させて転写用基板５側へ転写する工程と、熱可塑性を有する異方性導電フィルム７が表面に配置された駆動回路基板としてのＴＦＴ基板６と転写用基板５とを近接させてチップ部品３に異方性導電フィルム７を接触させる工程と、転写用基板５とＴＦＴ基板６とを熱圧着して、熱膨張性粒子４２を熱膨張させた後、転写用基板５とＴＦＴ基板６とを離間させて、チップ部品３から転写部材層４を剥離させてチップ部品３をＴＦＴ基板６側へ転写する工程と、を備える。
(Chip part transfer method)
The chip component transfer method according to the present embodiment includes a step of disposing the chip component 3 on the temporary substrate 1 and a transfer member layer including a transfer member 43 in which thermally expandable particles 42 are dispersed in a thermoplastic adhesive 41. A step of adhering the transfer member layer 4 to the chip component 3 by bringing the transfer substrate 5 provided along the substrate surface 4 and the temporary substrate 1 close to each other, and separating the transfer substrate 5 and the temporary substrate 1 from each other, A process of peeling the chip component 3 from the temporary substrate 1 side and transferring it to the transfer substrate 5 side, a TFT substrate 6 as a drive circuit board having a thermoplastic anisotropic conductive film 7 disposed on the surface, and a transfer substrate A step of bringing the anisotropic conductive film 7 into contact with the chip component 3 in close proximity to the substrate 5 and thermocompression bonding of the transfer substrate 5 and the TFT substrate 6 to thermally expand the thermally expandable particles 42; The transfer substrate 5 and the TFT substrate 6 are separated and From the part 3 by peeling the transfer member layer 4 comprises a step of transferring the chip component 3 to the TFT substrate 6 side.
本実施の形態にチップ部品の転写方法では、チップ部品として、表示装置の画素を構成する発光素子に限定されるものではなく、各種の半導体チップの基板実装にも適用可能である。 The chip component transfer method according to the present embodiment is not limited to the light emitting element constituting the pixel of the display device as the chip component, and can also be applied to substrate mounting of various semiconductor chips.
［その他の実施の形態］
以上、実施の形態について説明したが、これらの実施の形態の開示の一部をなす論述および図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例および運用技術が明らかとなろう。
[Other embodiments]
Although the embodiments have been described above, it should not be understood that the description and the drawings, which form a part of the disclosure of these embodiments, limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.
例えば、上述の実施の形態に係る表示装置の製造方法では、仮基板１におけるチップ部品３の配置領域が、マイクロＬＥＤディスプレイの表示領域と同等の縦横寸法に設定した。このため、全画素を構成する多数のチップ部品３を一括して転写できる。しかし、本発明に係る表示装置の製造方法では、ＴＦＴ基板６の表示領域に対して、複数の転写用基板５でチップ部品３の転写を行う構成としてもよい。すなわち、複数の転写用基板５を用いて、ＴＦＴ基板６の表示領域をチップ部品３で網羅できれば、１つの転写用基板５でなくてもよい。 For example, in the manufacturing method of the display device according to the above-described embodiment, the arrangement area of the chip component 3 on the temporary substrate 1 is set to the same vertical and horizontal dimensions as the display area of the micro LED display. For this reason, a large number of chip components 3 constituting all the pixels can be collectively transferred. However, the manufacturing method of the display device according to the present invention may be configured such that the chip component 3 is transferred to the display area of the TFT substrate 6 by a plurality of transfer substrates 5. In other words, if the display area of the TFT substrate 6 can be covered by the chip component 3 using a plurality of transfer substrates 5, the transfer substrate 5 may not be one.
上記の実施の形態において、転写部材４３を構成する熱膨張性粒子４２は、外殻４４の内部に空気または低沸点溶剤を封止した構成であるが、空気以外の気体を封止してもよい。また、図１０に示す熱膨張性粒子４２Ａのように、外殻４４の内部に、熱膨張率の大きい金属などの固体物質４６を充填したものを用いてもよい。さらに、熱膨張性粒子としては、外殻の内部に、伸縮性を有する多孔構造体を形成し、この多孔構造体に気体や低沸点溶剤を含ませた構成としてもよい。 In the above embodiment, the thermally expandable particles 42 constituting the transfer member 43 have a structure in which air or a low-boiling solvent is sealed inside the outer shell 44, but even if a gas other than air is sealed. Good. Further, as in the heat-expandable particles 42A shown in FIG. 10, the outer shell 44 may be filled with a solid substance 46 such as a metal having a high coefficient of thermal expansion. Further, the thermally expandable particles may have a structure in which a porous structure having elasticity is formed inside the outer shell, and gas or a low boiling point solvent is included in the porous structure.
上記の実施の形態に係る表示装置の製造方法においては、ＴＦＴ基板６に異方性導電フィルム７を設けたが、図１１に示すように、異方性導電フィルム７の上にパッシベーション機能を有する保護樹脂層８を積層してもよい。図１２に示すように、保護樹脂層８を積層した場合、転写用基板５とＴＦＴ基板６とを重ねて熱圧着したときに、チップ部品３の下面を保護樹脂層８が覆うためチップ部品３の電極３１，３２やチップ部品３の下面の劣化を抑制する効果がある。 In the manufacturing method of the display device according to the above embodiment, the anisotropic conductive film 7 is provided on the TFT substrate 6, but has a passivation function on the anisotropic conductive film 7 as shown in FIG. 11. A protective resin layer 8 may be laminated. As shown in FIG. 12, when the protective resin layer 8 is stacked, the chip resin 3 is covered with the protective resin layer 8 when the transfer substrate 5 and the TFT substrate 6 are overlapped and thermocompression bonded. This has the effect of suppressing deterioration of the electrodes 31 and 32 and the lower surface of the chip component 3.
上記の実施の形態に係る表示装置の製造方法においては、駆動回路基板としてＴＦＴ基板６を適用して説明したが、本発明は、表示装置の駆動方式に応じて、スイッチング素子としてＴＦＴを用いない駆動回路を有する駆動回路基板にも適用できることは言うまでもない。 In the manufacturing method of the display device according to the above embodiment, the TFT substrate 6 is applied as the drive circuit substrate. However, the present invention does not use the TFT as the switching element according to the drive method of the display device. Needless to say, the present invention can also be applied to a drive circuit board having a drive circuit.
また、上記の実施の形態に係る表示装置の製造方法においては、チップ部品３が転写された転写用基板５の上に、ＴＦＴ基板６を載せた状態で熱圧着を行い、その後、ＴＦＴ基板６を上昇させる動作を行ってもよい。 In the display device manufacturing method according to the above-described embodiment, thermocompression bonding is performed in a state where the TFT substrate 6 is placed on the transfer substrate 5 onto which the chip component 3 has been transferred. You may perform the operation | movement which raises.
上記の実施の形態に係る表示装置の製造方法においては、仮基板１に仮基板側接着剤層２を設けたが、仮基板側接着剤層２を設けずにチップ部品３を仮基板１上に配置する構成としてもよい。 In the manufacturing method of the display device according to the above embodiment, the temporary substrate 1 is provided with the temporary substrate side adhesive layer 2, but the chip component 3 is mounted on the temporary substrate 1 without providing the temporary substrate side adhesive layer 2. It is good also as a structure arrange | positioned.
１ 仮基板
２ 仮基板側接着剤層
３ チップ部品
４ 転写部材層
５ 転写用基板
６ ＴＦＴ基板（駆動回路基板）
７ 異方性導電フィルム
８ 保護樹脂層
３１，３２ 電極
４１ 熱可塑性接着剤
４２，４２Ｂ 熱膨張性粒子
４３ 転写部材
４４ 外殻
４５ 空気
４６ 固体物質
DESCRIPTION OF SYMBOLS 1 Temporary substrate 2 Temporary substrate side adhesive bond layer 3 Chip components 4 Transfer member layer 5 Transfer substrate 6 TFT substrate (drive circuit substrate)
7 Anisotropic Conductive Film 8 Protective Resin Layer 31, 32 Electrode 41 Thermoplastic Adhesive 42, 42B Thermally Expandable Particles 43 Transfer Member 44 Outer Shell 45 Air 46 Solid Material
Claims (9)
熱可塑性接着剤に熱膨張性粒子を分散させた転写部材でなる転写部材層を基板表面に沿って設けた転写用基板と、前記仮基板と、を近接させて前記チップ部品に前記転写部材層を接着する工程と、
前記転写用基板と前記仮基板とを離間させて、前記チップ部品を前記仮基板側から剥離させて前記転写用基板側へ転写する工程と、
熱可塑性を有する異方性導電フィルムが表面に配置された駆動回路基板と、前記転写用基板と、を近接させて、前記チップ部品に前記異方性導電フィルムを接触させる工程と、
前記転写用基板と前記駆動回路基板とを熱圧着して、前記熱膨張性粒子を熱膨張させた後、前記転写用基板と前記駆動回路基板とを離間させて、前記チップ部品から前記転写部材層を剥離して、前記チップ部品を駆動回路基板側へ転写する工程と、
を備える表示装置の製造方法。 A step of arranging the chip components constituting the pixel on a temporary substrate;
A transfer substrate in which a transfer member layer made of a transfer member in which thermally expandable particles are dispersed in a thermoplastic adhesive is provided along the substrate surface, and the temporary substrate are placed close to each other and the transfer member layer on the chip component. Bonding the
Separating the transfer substrate and the temporary substrate, separating the chip component from the temporary substrate side and transferring the chip component to the transfer substrate side;
A step of bringing the anisotropic conductive film having thermoplasticity on the surface thereof and the transfer substrate close to each other and bringing the anisotropic conductive film into contact with the chip component;
The transfer substrate and the drive circuit substrate are thermocompression bonded to thermally expand the thermally expandable particles, and then the transfer substrate and the drive circuit substrate are separated from each other so that the transfer member is separated from the chip component. Peeling the layer and transferring the chip component to the drive circuit board side;
A method for manufacturing a display device.
請求項１に記載の表示装置の製造方法。 The thermally expandable particles are capsule-shaped spheres in which an outer shell is formed of a thermoplastic resin, and a low boiling point material is sealed inside.
The manufacturing method of the display apparatus of Claim 1.
請求項１に記載の表示装置の製造方法。 The thermally expandable particles are capsule-shaped spheres in which an outer shell is formed of a thermoplastic resin, and a gas is sealed inside.
The manufacturing method of the display apparatus of Claim 1.
請求項１から請求項３のいずれか一項に記載の表示装置の製造方法。 The chip component is a micro LED chip,
The manufacturing method of the display apparatus as described in any one of Claims 1-3.
請求項１から請求項４のいずれか一項に記載の表示装置の製造方法。 Laminating a protective resin layer made of a thermoplastic resin on the anisotropic conductive film,
The manufacturing method of the display apparatus as described in any one of Claims 1-4.
熱可塑性接着剤に熱膨張性粒子を分散させた転写部材でなる転写部材層を基板表面に沿って設けた転写用基板と、前記仮基板と、を近接させて前記チップ部品に前記転写部材層を接着する工程と、
前記転写用基板と前記仮基板とを離間させて、前記チップ部品を前記仮基板側から剥離させて前記転写用基板側へ転写する工程と、
熱可塑性を有する異方性導電フィルムが表面に配置された駆動回路基板と、前記転写用基板と、を近接させて前記チップ部品に前記異方性導電フィルムを接触させる工程と、
前記転写用基板と前記駆動回路基板とを熱圧着して、前記熱膨張性粒子を熱膨張させた後、前記転写用基板と前記駆動回路基板とを離間させて、前記チップ部品から前記転写部材層を剥離させて前記チップ部品を駆動回路基板側へ転写する工程と、
を備えるチップ部品の転写方法。 Placing chip components on a temporary substrate;
A transfer substrate in which a transfer member layer made of a transfer member in which thermally expandable particles are dispersed in a thermoplastic adhesive is provided along the substrate surface, and the temporary substrate are placed close to each other and the transfer member layer on the chip component. Bonding the
Separating the transfer substrate and the temporary substrate, separating the chip component from the temporary substrate side and transferring the chip component to the transfer substrate side;
A step of bringing the anisotropic conductive film having thermoplasticity on the surface thereof and the transfer substrate close to each other and bringing the anisotropic conductive film into contact with the chip component;
The transfer substrate and the drive circuit substrate are thermocompression bonded to thermally expand the thermally expandable particles, and then the transfer substrate and the drive circuit substrate are separated from each other so that the transfer member is separated from the chip component. Peeling the layer and transferring the chip component to the drive circuit board side;
A chip part transfer method comprising:
請求項６に記載のチップ部品の転写方法。 The thermally expandable particles are capsule-shaped spheres in which an outer shell is formed of a thermoplastic resin, and a low boiling point material is sealed inside.
The method for transferring a chip part according to claim 6.
請求項６に記載のチップ部品の転写方法。 The thermally expandable particles are capsule-shaped spheres in which an outer shell is formed of a thermoplastic resin, and a gas is sealed inside.
The method for transferring a chip part according to claim 6.
熱可塑性接着剤に熱膨張性粒子を分散させてなり、
前記熱膨張性粒子は、熱可塑性樹脂で外殻が形成されたカプセル状の球体であり、内部に気体または低沸点材料が封止されている、
転写部材。 A transfer member used for transferring the chip component by bonding the chip component and peeling the chip component,
Dispersing thermally expandable particles in a thermoplastic adhesive,
The thermally expandable particles are capsule-shaped spheres having an outer shell formed of a thermoplastic resin, and a gas or a low boiling point material is sealed inside.
Transfer member.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
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| JP2017134409A JP2019015899A (en) | 2017-07-10 | 2017-07-10 | Display device manufacturing method, chip component transferring method, and transferring member |
| TW107123044A TW201919104A (en) | 2017-07-10 | 2018-07-04 | Method for manufacturing display device, method for transferring chip component, and transfer member |
| PCT/JP2018/025672 WO2019013120A1 (en) | 2017-07-10 | 2018-07-06 | Method for manufacturing display device, method for transferring chip component, and transfer member |
| CN201880044616.5A CN110832572A (en) | 2017-07-10 | 2018-07-06 | Method for manufacturing display device, method for transferring chip component, and transfer member |
| KR1020197036200A KR20200019133A (en) | 2017-07-10 | 2018-07-06 | Manufacturing Method of Display Device, Transfer Method of Chip Component, and Transfer Member |
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| KR (1) | KR20200019133A (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2019013120A1 (en) | 2019-01-17 |
| CN110832572A (en) | 2020-02-21 |
| KR20200019133A (en) | 2020-02-21 |
| TW201919104A (en) | 2019-05-16 |
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