CN110832572A - Method for manufacturing display device, method for transferring chip component, and transfer member - Google Patents
Method for manufacturing display device, method for transferring chip component, and transfer member Download PDFInfo
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- CN110832572A CN110832572A CN201880044616.5A CN201880044616A CN110832572A CN 110832572 A CN110832572 A CN 110832572A CN 201880044616 A CN201880044616 A CN 201880044616A CN 110832572 A CN110832572 A CN 110832572A
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- 238000000034 method Methods 0.000 title claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
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- 239000010410 layer Substances 0.000 claims description 30
- 239000000853 adhesive Substances 0.000 claims description 23
- 229920001169 thermoplastic Polymers 0.000 claims description 15
- 239000004416 thermosoftening plastic Substances 0.000 claims description 15
- 229920005992 thermoplastic resin Polymers 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 239000011230 binding agent Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 24
- 239000012790 adhesive layer Substances 0.000 description 23
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- 238000009835 boiling Methods 0.000 description 9
- 239000002904 solvent Substances 0.000 description 6
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
Abstract
The invention provides a method for manufacturing a display device, which reliably transfers chip components to a desired position of a drive circuit substrate, has high precision of pixel configuration and high manufacturing yield. The method comprises the following steps: a drive circuit substrate (6) provided with an anisotropic conductive film (7) is brought into close proximity to a transfer substrate (5) to which a chip component (3) has been transferred, so that the anisotropic conductive film (7) is brought into contact with the chip component (3), and then the transfer substrate (5) and the drive circuit substrate (6) are thermally press-bonded to thermally expand the thermally expandable particles (42), and thereafter the transfer member layer (5) is peeled off from the chip component (3), so that the chip component (3) is transferred to the drive circuit substrate (6) side.
Description
Technical Field
The invention relates to a method for manufacturing a display device, a method for transferring a chip component, and a transfer member.
Background
As a next-generation display device, a micro LED display is receiving attention. A micro LED display is a display device in which each pixel is a fine light emitting diode (hereinafter, referred to as LED) and the surface of a display substrate is densely covered with LED chips. In the manufacture of such a micro LED display, it is important to accurately and reliably arrange LED chips on the surface of a display substrate.
As a transfer technique for conveying a chip component and arranging it on a substrate surface, for example, a technique using a transfer tool disclosed in patent document 1 is known. The transfer tool includes an electrostatic transfer head array for capturing a chip component. In actual manufacturing of a micro LED display, a transfer method which has little influence on electrostatic destruction or the like of an LED chip as an electronic component is desired.
As a method for transferring such an LED chip, a method including the following steps (1) to (4) is proposed.
(1) First, a plurality of LED chips are arranged on a temporary substrate-side adhesive layer provided on the surface of a temporary substrate (tray).
(2) Next, the LED chip is attached to a transfer adhesive layer provided on the surface of the transfer plate, and then the transfer plate is lifted. Thereby, the LED chip is peeled off from the temporary substrate-side adhesive layer of the temporary substrate. That is, the LED chip is transferred (transferred) from the temporary substrate side to the transfer plate side.
(3) Next, a TFT (Thin Film transistor) substrate is prepared. An anisotropic conductive film is previously disposed on the surface of the TFT substrate on which the LED chip is mounted. After the transfer plate is disposed to face the TFT substrate, the LED chip is brought into contact with the anisotropic conductive film by bringing the transfer plate close to the TFT substrate.
(4) Then, the transfer plate is thermocompression bonded to the TFT substrate with the TFT substrate interposed therebetween, and the LED chip is electrically connected to the driver circuit on the TFT substrate side, and then the transfer adhesive layer of the transfer plate is peeled off from the LED chip. In this step, the LED chip is transferred from the transfer substrate to the driver circuit substrate.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 2015-529400
Disclosure of Invention
Technical problem to be solved by the invention
In the above-described transfer method of the LED chip, it is necessary to set the relative adhesive strength among the three adhesive layers of the temporary substrate-side adhesive layer, the transfer adhesive layer, and the anisotropic conductive film as follows. That is, the adhesion force between the transfer adhesive layer and the LED chip needs to be set larger than the adhesion force between the temporary substrate-side adhesive layer and the LED chip. The adhesion between the anisotropic conductive film and the LED chip needs to be set larger than the adhesion between the transfer adhesive layer and the LED chip.
In the above-described transfer method, there is a technical problem that the transfer of the LED chip cannot be smoothly performed due to variations in the adhesive force of the adhesive materials used for the temporary substrate-side adhesive layer, the transfer adhesive layer, and the anisotropic conductive film, respectively. Variations in the adhesive strength of the adhesive material are caused by unstable performance of the adhesive for each production lot, a film formation state of the adhesive layer, a change with time, and the like. Therefore, when a display device is manufactured by using the above-described transfer method, there is a problem in that the yield is low. In the method for manufacturing a display device using the above transfer method, when the adhesive force of the transfer adhesive layer has the same adhesive force as that of the anisotropic conductive film, problems such as detachment of the LED chip from the anisotropic conductive film and displacement of the LED chip on the anisotropic conductive film occur.
The present invention has been made in view of the above-described problems, and an object thereof is to provide a method for manufacturing a display device, which can reliably transfer a chip component to a desired position on a driver circuit board and has a high yield. The invention aims to provide a transfer method capable of reliably transferring a chip component to a desired position of a drive circuit substrate. Another object of the present invention is to provide a transfer member capable of reliably transferring a chip component.
Technical solution for solving technical problem
In order to solve the above-described problems and achieve the object, a first embodiment of the present invention is a method for manufacturing a display device, including: disposing chip components constituting the pixels on the temporary substrate; a step of bringing a transfer substrate, on which a transfer member layer is provided along a substrate surface, into proximity with the temporary substrate to bond the transfer member layer to the chip component, the transfer member layer being formed of a transfer member in which thermally expandable particles are dispersed in a thermoplastic adhesive; separating the transfer substrate from the temporary substrate to peel off the chip component from the temporary substrate and transfer the chip component to the transfer substrate; bringing a drive circuit board, on the surface of which an anisotropic conductive film having thermoplasticity is disposed, into proximity with the transfer substrate, thereby bringing the anisotropic conductive film into contact with the chip component; and a step of thermally press-bonding the transfer substrate and the drive circuit substrate to thermally expand the thermally expandable particles, and then separating the transfer substrate and the drive circuit substrate from each other to peel off the transfer member layer from the chip component and transfer the chip component to the drive circuit substrate.
In the first embodiment, the thermally expandable particles are preferably capsule-shaped spheres each having a shell made of a thermoplastic resin and a low boiling point material sealed therein.
In the first embodiment, the thermally expandable particles are preferably capsule-shaped spheres each having a shell made of a thermoplastic resin and a gas sealed inside the sphere.
In the first embodiment, the chip component is preferably a micro LED chip.
In the first embodiment, a resin protective layer made of a thermoplastic resin is preferably stacked on the anisotropic conductive film.
A second embodiment of the present invention is a chip transfer method including: disposing the chip component on the temporary substrate; a step of bringing a transfer substrate, on which a transfer member layer is provided along a substrate surface, into proximity with the temporary substrate to bond the transfer member layer to the chip component, the transfer member layer being formed of a transfer member in which thermally expandable particles are dispersed in a thermoplastic adhesive; separating the transfer substrate from the temporary substrate to peel off the chip component from the temporary substrate and transfer the chip component to the transfer substrate; bringing a drive circuit board, on the surface of which an anisotropic conductive film having thermoplasticity is disposed, into proximity with the transfer substrate, thereby bringing the anisotropic conductive film into contact with the chip component; and a step of thermally press-bonding the transfer substrate and the drive circuit substrate to thermally expand the thermally expandable particles, and then separating the transfer substrate and the drive circuit substrate from each other to peel off the transfer member layer from the chip component and transfer the chip component to the drive circuit substrate.
In the second embodiment, the thermally expandable particles are preferably capsule-shaped spheres each having a shell made of a thermoplastic resin and a low boiling point material sealed therein.
In the second embodiment, the thermally expandable particles are preferably capsule-shaped spheres each having a shell made of a thermoplastic resin and a gas sealed inside the sphere.
A third aspect of the present invention is a transfer member for transferring a chip component by bonding the chip component and peeling off the chip component, wherein the transfer member is formed by dispersing thermally expandable particles in a thermoplastic adhesive, and preferably the thermally expandable particles are capsule-shaped spheres having shells made of a thermoplastic resin and sealed with a gas or a low boiling point material inside.
Effects of the invention
According to the method for manufacturing a display device of the present invention, the chip component can be reliably transferred to a desired position on the driver circuit board, and the method for manufacturing a display device with high precision of pixel arrangement and high manufacturing yield can be realized. According to the chip component transfer method of the present invention, a transfer method for reliably transferring a chip component to a desired position on a driver circuit board can be realized. According to the transfer member of the present invention, the chip component can be reliably transferred.
Drawings
Fig. 1 is a process cross-sectional explanatory view showing a state where a temporary substrate and a transfer substrate are opposed to each other in the method for manufacturing a display device according to the embodiment of the present invention.
Fig. 2 is a process cross-sectional explanatory view showing a state in which the transfer member layer of the transfer substrate is bonded to the upper surface of the chip component on the temporary substrate side in the method for manufacturing a display device according to the embodiment of the present invention.
Fig. 3 is a cross-sectional view illustrating a process in a state where the transfer member layer of the transfer substrate is bonded to the upper surface of the chip component on the temporary substrate side, and then the transfer substrate is separated from the temporary substrate to transfer the chip component to the transfer substrate side in the method for manufacturing a display device according to the embodiment of the present invention.
Fig. 4 is a process cross-sectional explanatory view showing a state where the transfer substrate to which the chip component is transferred and the driver circuit substrate are opposed to each other in the method for manufacturing the display device according to the embodiment of the present invention.
Fig. 5 is a process cross-sectional explanatory view showing a state where the chip component transferred to the transfer substrate is brought into contact with the driver circuit substrate via the anisotropic conductive film in the method for manufacturing a display device according to the embodiment of the present invention.
Fig. 6 is a process cross-sectional explanatory view showing a state in which the transfer substrate and the driver circuit substrate are superimposed and thermocompression bonded in the method for manufacturing a display device according to the embodiment of the present invention.
Fig. 7 is a cross-sectional view illustrating a process in a state where the transfer substrate and the driver circuit substrate are stacked and thermocompression bonded, and then the transfer substrate and the driver circuit substrate are separated, and the transfer member layer is peeled from the chip component and the chip component is transferred to the driver circuit substrate side in the method for manufacturing a display device according to the embodiment of the present invention.
Fig. 8 is a process cross-sectional explanatory view showing a state in which the thermal expandable particles are contracted by lowering the temperature of the transfer substrate peeled from the chip component in the method for manufacturing a display device according to the embodiment of the present invention.
Fig. 9 is a cross-sectional explanatory view showing a change in state of the thermally expandable particles contained in the transfer member in the method for manufacturing a display device according to the embodiment of the present invention.
Fig. 10 is a cross-sectional explanatory view showing a change in state of a modification example of the thermally expandable particles included in the transfer member in the method for manufacturing a display device according to the embodiment of the present invention.
Fig. 11 is a process cross-sectional explanatory view showing a state in which a driver circuit board having a protective layer laminated on an anisotropic conductive film and a transfer board to which chip components are transferred face each other in a method for manufacturing a display device according to another embodiment of the present invention.
Fig. 12 is a cross-sectional view illustrating a process of laminating a transfer substrate and a driver circuit substrate and thermocompression bonding the laminate in a method of manufacturing a display device according to another embodiment of the present invention.
Detailed Description
Hereinafter, a method for manufacturing a display device, a method for transferring a chip component, and a transfer member according to an embodiment of the present invention will be described in detail with reference to the drawings. The drawings are schematic, and it should be noted that the sizes, the size ratios, the shapes and the like of the components are different from the actual situation. The drawings also include portions different in dimensional relationship, proportion, and shape from each other.
Detailed description of the preferred embodiments
A method for manufacturing a display device according to the present embodiment will be described below with reference to fig. 1 to 9. The present embodiment is a method for manufacturing a display device to which the method for transferring a chip component and the transfer member according to the present invention are applied. In this embodiment, a micro LED display is applied to the display device.
First, as shown in fig. 1, a temporary substrate 1 is prepared. The temporary substrate 1 has a temporary substrate-side adhesive layer 2 having a small adhesive force on one substrate surface. A plurality of chip components 3 are arranged on the temporary substrate 1 at predetermined arrangement intervals, and the chip components 3 used in the present embodiment are micro LED chips constituting pixels of a display device. The arrangement region in which the plurality of chip components 3 are arranged on the surface of the temporary substrate 1 is set to have a length and width dimension equivalent to the display region of the micro LED display.
In the present embodiment, as shown in fig. 1, electrodes 31 and 32 are formed on the lower surface of the chip component 3 so as to protrude downward. These electrodes 31, 32 are bonded to the temporary substrate-side adhesive layer 2 with a small adhesive force. The arrangement positions of the electrodes 31 and 32 shown in the figure are not limited if the electrodes of the chip component 3 are exposed to the lower surface of the chip component 3.
Next, as shown in fig. 1, a transfer substrate 5 is prepared. The transfer substrate 5 is provided with a transfer member layer 4 along one substrate surface. The transfer member layer 4 is formed of a transfer member 43 in which thermally expandable particles 42 are dispersed in a thermoplastic adhesive 41. The adhesive force of the thermoplastic adhesive 41 is set to be sufficiently larger than the adhesive constituting the temporary substrate-side adhesive layer 2 provided on the temporary substrate 1 side.
Here, the thermally expandable particles 42 will be described with reference to fig. 9. Fig. 9 is a cross-sectional explanatory view showing a normal state and an expanded state of the thermally expandable particles 42 according to the present embodiment. The thermally expandable particles 42 are spherical bodies, and the shell 44 is formed in a capsule shape from a thermoplastic resin. The interior of the housing 44 is sealed with air 45.
In the thermally expandable particles 42 shown in fig. 9, air 45 is sealed inside the case 44, but a gas other than air or a low boiling point solvent may be sealed. In the case of using a low boiling point solvent, a small amount of the low boiling point solvent may be sealed in the casing 44.
When the thermally expandable particles 42 are heated, the air 45 or the low boiling point solvent inside the casing 44 expands as shown by the right side of the thick arrow in fig. 9, and the diameter size increases. When the thermally expandable particles 42 are cooled from the state after being heated and expanded, they contract and return to the original state of the thermally expandable particles 42 having a small diameter.
Next, the chip component 3 on the temporary substrate 1 is transferred using the transfer substrate 5. As shown in fig. 2, the transfer member layer 4 of the transfer substrate 5 is bonded to the upper surface of the chip component 3 on the temporary substrate 1 by bringing the transfer substrate 5 close to the temporary substrate 1. Thereafter, as shown in fig. 3, the chip component 3 is peeled off from the temporary substrate-side adhesive layer 2 by separating the transfer substrate 5 from the temporary substrate 1. Here, since the adhesive force of the transfer member layer 4 is significantly stronger than that of the temporary substrate-side adhesive layer 2, the chip component 3 is easily peeled off from the temporary substrate-side adhesive layer 2. In this manner, the chip component 3 is transferred from the temporary substrate 1 side to the transfer substrate 5 side. The approach and separation of the transfer substrate 5 and the temporary substrate 1 may be performed by moving the temporary substrate 1 with respect to the transfer substrate 5, or by moving the transfer substrate 5 with respect to the temporary substrate 1.
Next, as shown in fig. 4, a TFT (Thin Film transistor) substrate 6 as a driving circuit substrate is prepared. A driving circuit, not shown, is formed on the TFT substrate 6. The TFT substrate 6 has pads 61 and 62 on the surface on which the chip component 3 is mounted. These pads 61, 62 are configured to enable connection with the electrodes 31, 32 of the chip part 3. An anisotropic conductive film 7 is disposed on the surface of the TFT substrate 6 on the side where the spacers 61 and 62 are provided. As shown in fig. 4, the transfer substrate 5 is moved so as to face the TFT substrate 6.
Next, as shown in fig. 5, the transfer substrate 5 and the TFT substrate 6 are brought close to each other, and the electrodes 31 and 32 of the chip component 3 are brought into contact with the anisotropic conductive film 7. Then, thermocompression bonding (hot press) is performed on the transfer substrate 5 and the TFT substrate 6 under appropriate pressure conditions and temperature conditions.
Accordingly, as shown in fig. 6, conductive particles, not shown, of the anisotropic conductive film 7 are pressed and bonded between the electrode 31 and the pad 61 and between the electrode 32 and the pad 62 to form conductive regions 71 and 72. Therefore, the driving circuit side is electrically connected to the chip component 3 side. On the transfer substrate 5 side, the thermoplastic adhesive 41 constituting the transfer member layer 4 is plasticized, and the thermally expandable particles 42 are thermally expanded and enlarged.
As described above, when the thermal expansion particles 42 become large, the surface of the transfer member layer 4 becomes rough, the bonding area with the chip component 3 decreases, and the bonding force also decreases. Therefore, the transfer member layer 4 is easily peeled from the upper surface of the chip component 3. Therefore, as shown in fig. 7, by separating the transfer substrate 5 from the TFT substrate 6, the chip component 3 can be easily peeled off from the transfer member layer 4 of the transfer substrate 5, and the transfer can be smoothly performed.
As shown in fig. 8, the thermally expandable particles 42 contract with a decrease in temperature and return to their original volume. In addition, the thermoplastic adhesive 41 also returns to the state before heating as the temperature decreases. Therefore, the transfer substrate 5 can be reused.
According to the method of manufacturing a display device according to the present embodiment, the chip component 3 can be reliably transferred to a desired position on the TFT substrate 6, and the accuracy of the pixel arrangement of the micro LED display can be improved. In addition, according to the method for manufacturing a display device according to the present embodiment, since the chip component 3 can be smoothly transferred, the manufacturing yield can be improved.
The method of transferring the chip component according to the present invention to the method of manufacturing the display device according to the present invention has been described above. The method of transferring the chip component according to the present embodiment is as follows.
(transfer method of chip parts)
The chip component transfer method according to the present embodiment includes: a step of disposing the chip component 3 on the temporary substrate 1; a step of bringing a transfer substrate 5 provided with a transfer member layer 4 along a substrate surface, the transfer member layer 4 being formed of a transfer member 43 having thermally expandable particles 42 dispersed in a thermoplastic adhesive 41, into proximity with a temporary substrate 1 to bond the transfer member layer 4 to the chip component 3; a step of separating the transfer substrate 5 from the temporary substrate 1 to peel off the chip component 3 from the temporary substrate 1 side and transfer the chip component to the transfer substrate 5 side; bringing a TFT substrate 6, which is a driver circuit substrate on which a thermoplastic anisotropic conductive film 7 is disposed, into close proximity to a transfer substrate 5, thereby bringing the anisotropic conductive film 7 into contact with the chip component 3; and a step of thermally press-bonding the transfer substrate 5 and the TFT substrate 6 to thermally expand the thermally expandable particles 42, and then separating the transfer substrate 5 and the TFT substrate 6 from each other to peel the transfer member layer 4 from the chip component 3 and transfer the chip component 3 to the TFT substrate 6 side.
The chip component transfer method according to the present embodiment is not limited to the light-emitting element constituting the pixel of the display device, and can be applied to the substrate mounting of various semiconductor chips.
[ other embodiments ]
While the embodiments have been described above, it should not be understood that the present invention is limited by the description and drawings constituting a part of the disclosure of the embodiments. It will be apparent to those skilled in the art from this disclosure that various alternative embodiments, examples, and techniques of use can be made.
For example, in the method of manufacturing a display device according to the above-described embodiment, the arrangement region of the chip components 3 of the temporary substrate 1 is set to have a length and width dimension equivalent to the display region of the micro LED display. Therefore, the plurality of chip components 3 constituting the full pixels can be collectively transferred. However, in the method for manufacturing a display device according to the present invention, the following configuration may be adopted: the chip component 3 is transferred to the display region of the TFT substrate 6 by the plurality of transfer substrates 5. That is, if a plurality of transfer substrates 5 can be used and the display region of the TFT substrate 6 can be covered with the chip component 3, it is not necessary to use one transfer substrate 5.
In the above-described embodiment, the thermally expandable particles 42 constituting the transfer member 43 are configured such that air or a low boiling point solvent is sealed inside the casing 44, but a gas other than air may be sealed. As the thermally expandable particles 42A shown in fig. 10, a structure in which a solid substance 46 such as a metal having a high thermal expansion coefficient is filled in the case 44 may be used. The thermally expandable particles may be formed by forming a porous structure having elasticity in the shell and including a gas or a low boiling point solvent in the porous structure.
In the method of manufacturing a display device according to the above-described embodiment, the anisotropic conductive film 7 is provided on the TFT substrate 6, but as shown in fig. 11, a resin protective layer 8 having a passivation function may be stacked on the anisotropic conductive film 7. As shown in fig. 12, in the case where the resin protective layer 8 is laminated, when the transfer substrate 5 and the TFT substrate 6 are stacked and thermocompression bonded, the lower surface of the chip component 3 is covered with the resin protective layer 8, and therefore, there is an effect of suppressing deterioration of the electrodes 31 and 32 of the chip component 3 and the lower surface of the chip component 3.
In the method of manufacturing a display device according to the above-described embodiment, the TFT substrate 6 is applied as the driver circuit substrate, but it goes without saying that the present invention is applied to a driver circuit substrate having a driver circuit which does not use a TFT as a switching element, depending on the driving method of a display device.
In the method of manufacturing a display device according to the above-described embodiment, the TFT substrate 6 may be raised after the thermal compression bonding is performed in a state where the TFT substrate 6 is placed on the transfer substrate 5 to which the chip component 3 is transferred.
In the method of manufacturing a display device according to the above-described embodiment, the temporary substrate-side adhesive layer 2 is provided on the temporary substrate 1, but the chip component 3 may be disposed on the temporary substrate 1 without providing the temporary substrate-side adhesive layer 2.
Description of the reference numerals
1 temporary substrate
2 temporary substrate side adhesive layer
3 chip part
4 transfer member layer
5 transfer substrate
6 TFT substrate (drive circuit substrate)
7 Anisotropic conductive film
8 resin protective layer
31. 32 electrodes
41 thermoplastic binder
42. 42B thermally expandable particles
43 transfer member
44 outer casing
45 air
46 solid substance
Claims (9)
1. A method for manufacturing a display device, comprising:
disposing chip components constituting the pixels on the temporary substrate;
a step of bringing a transfer substrate provided with a transfer member layer formed of a transfer member in which thermally expandable particles are dispersed in a thermoplastic adhesive agent, into proximity with the temporary substrate, thereby bonding the transfer member layer to the chip component;
separating the transfer substrate from the temporary substrate to peel off the chip component from the temporary substrate and transfer the chip component to the transfer substrate;
bringing a driver circuit board having a thermoplastic anisotropic conductive film disposed on a surface thereof into proximity with the transfer substrate, thereby bringing the anisotropic conductive film into contact with the chip component; and
and a step of thermally press-bonding the transfer substrate and the drive circuit substrate to thermally expand the thermally expandable particles, and then separating the transfer substrate and the drive circuit substrate from each other to peel off the transfer member layer from the chip component and transfer the chip component to the drive circuit substrate.
2. The method for manufacturing a display device according to claim 1,
the thermally expandable particles are capsule-shaped spheres having a shell made of a thermoplastic resin, and a low-boiling-point material is sealed inside the spheres.
3. The method for manufacturing a display device according to claim 1,
the thermally expandable particles are capsule-shaped spheres having a shell made of a thermoplastic resin, and a gas is sealed inside the spheres.
4. The method for manufacturing a display device according to any one of claims 1 to 3,
the chip part is a micro LED chip.
5. The method for manufacturing a display device according to any one of claims 1 to 4,
a resin protective layer made of a thermoplastic resin is laminated on the anisotropic conductive film.
6. A method for transferring a chip component, comprising:
disposing the chip component on the temporary substrate;
a step of bringing a transfer substrate provided with a transfer member layer formed of a transfer member in which thermally expandable particles are dispersed in a thermoplastic adhesive agent, into proximity with the temporary substrate, thereby bonding the transfer member layer to the chip component;
separating the transfer substrate from the temporary substrate to peel off the chip component from the temporary substrate and transfer the chip component to the transfer substrate;
bringing a driver circuit board having a thermoplastic anisotropic conductive film disposed on a surface thereof into proximity with the transfer substrate, thereby bringing the anisotropic conductive film into contact with the chip component; and
and a step of thermally press-bonding the transfer substrate and the drive circuit substrate to thermally expand the thermally expandable particles, and then separating the transfer substrate and the drive circuit substrate from each other to peel off the transfer member layer from the chip component and transfer the chip component to the drive circuit substrate.
7. The transfer method of a chip part according to claim 6,
the thermally expandable particles are capsule-shaped spheres having a shell made of a thermoplastic resin, and a low-boiling-point material is sealed inside the spheres.
8. The transfer method of a chip part according to claim 6,
the thermally expandable particles are capsule-shaped spheres having a shell made of a thermoplastic resin, and a gas is sealed inside the spheres.
9. A transfer member for transferring a chip component by bonding the chip component and peeling the chip component,
the transfer member is formed by dispersing heat-expandable particles in a thermoplastic binder,
the thermally expandable particles are capsule-shaped spheres having a shell made of a thermoplastic resin, and a gas or a low-boiling-point material is sealed inside the spheres.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017134409A JP2019015899A (en) | 2017-07-10 | 2017-07-10 | Display device manufacturing method, chip component transferring method, and transferring member |
| JP2017-134409 | 2017-07-10 | ||
| PCT/JP2018/025672 WO2019013120A1 (en) | 2017-07-10 | 2018-07-06 | Method for manufacturing display device, method for transferring chip component, and transfer member |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110832572A true CN110832572A (en) | 2020-02-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880044616.5A Withdrawn CN110832572A (en) | 2017-07-10 | 2018-07-06 | Method for manufacturing display device, method for transferring chip component, and transfer member |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2019015899A (en) |
| KR (1) | KR20200019133A (en) |
| CN (1) | CN110832572A (en) |
| TW (1) | TW201919104A (en) |
| WO (1) | WO2019013120A1 (en) |
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| CN110707197A (en) * | 2019-09-11 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | LED substrate and manufacturing method of LED display panel |
| CN113555473A (en) * | 2021-07-27 | 2021-10-26 | 深圳市思坦科技有限公司 | Mass transfer method and system for Micro-LED chips and display device |
| CN113611786A (en) * | 2021-08-02 | 2021-11-05 | 东莞市中麒光电技术有限公司 | LED chip bulk transfer method with high peeling yield and convenient film pouring |
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| KR20190099163A (en) * | 2019-08-06 | 2019-08-26 | 엘지전자 주식회사 | Method for manufacturing display device and transfer substrate for manufacturing display device |
| KR20210019323A (en) | 2019-08-12 | 2021-02-22 | 삼성전자주식회사 | Micro led display and manufacturing method thereof |
| CN112768370B (en) * | 2019-11-06 | 2023-02-10 | 成都辰显光电有限公司 | Transfer method and transfer device for micro-component |
| CN114902388A (en) * | 2020-03-09 | 2022-08-12 | 积水化学工业株式会社 | Method for manufacturing electronic component and method for manufacturing display device |
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| WO2022050621A1 (en) * | 2020-09-01 | 2022-03-10 | Samsung Electronics Co., Ltd. | Intermediate structure for manufacturing micro light emitting diode display, method of manufacturing the same, and method of manufacturing micro led display |
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| US11855050B2 (en) | 2020-10-08 | 2023-12-26 | Samsung Electronics Co., Ltd. | Micro-LED displays, micro-led transferring substrates, and methods of transferring micro-LEDs using the micro-LED transferring substrates |
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| JP2022116798A (en) * | 2021-01-29 | 2022-08-10 | 日東電工株式会社 | Adhesive sheet for electronic component transfer and method for processing electronic component using adhesive sheet for electronic component transfer |
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| KR102321518B1 (en) | 2021-02-08 | 2021-11-04 | (주)라이타이저 | Led chip transferring apparatus using photoresist resin |
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| WO2023033176A1 (en) | 2021-09-06 | 2023-03-09 | 積水化学工業株式会社 | Adhesive tape for semiconductor device manufacturing |
| JP7219373B1 (en) * | 2021-09-06 | 2023-02-07 | 積水化学工業株式会社 | Adhesive tape for semiconductor device manufacturing |
| WO2023048148A1 (en) * | 2021-09-22 | 2023-03-30 | デクセリアルズ株式会社 | Manufacturing method for connection structure |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60252681A (en) * | 1984-05-30 | 1985-12-13 | F S K Kk | Heat peelable adhesive sheet |
| TW546721B (en) * | 2001-04-11 | 2003-08-11 | Sony Corp | Element transfer method, element arrangement method using the same, and manufacturing method of image display device |
| TWI225088B (en) * | 1998-09-30 | 2004-12-11 | Nitto Denko Corp | Method of separating and recovering cut workpieces |
| CN1698077A (en) * | 2003-03-06 | 2005-11-16 | 索尼株式会社 | Element transfer method and display device |
| CN103456729A (en) * | 2013-07-26 | 2013-12-18 | 利亚德光电股份有限公司 | LED display screen |
| CN104781922A (en) * | 2012-09-07 | 2015-07-15 | 勒克斯维科技公司 | Mass transfer tool |
| WO2017008253A1 (en) * | 2015-07-14 | 2017-01-19 | Goertek. Inc | Transferring method, manufacturing method, device and electronic apparatus of micro-led |
| CN106601657A (en) * | 2016-12-12 | 2017-04-26 | 厦门市三安光电科技有限公司 | Transfer system and transfer method of microelements, manufacturing method, device and electronic device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000248240A (en) * | 1999-03-01 | 2000-09-12 | Nitto Denko Corp | Heat-releasable adhesive sheet |
| JP3959988B2 (en) * | 2001-06-27 | 2007-08-15 | ソニー株式会社 | Element transfer method |
-
2017
- 2017-07-10 JP JP2017134409A patent/JP2019015899A/en active Pending
-
2018
- 2018-07-04 TW TW107123044A patent/TW201919104A/en unknown
- 2018-07-06 KR KR1020197036200A patent/KR20200019133A/en unknown
- 2018-07-06 WO PCT/JP2018/025672 patent/WO2019013120A1/en active Application Filing
- 2018-07-06 CN CN201880044616.5A patent/CN110832572A/en not_active Withdrawn
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60252681A (en) * | 1984-05-30 | 1985-12-13 | F S K Kk | Heat peelable adhesive sheet |
| TWI225088B (en) * | 1998-09-30 | 2004-12-11 | Nitto Denko Corp | Method of separating and recovering cut workpieces |
| TW546721B (en) * | 2001-04-11 | 2003-08-11 | Sony Corp | Element transfer method, element arrangement method using the same, and manufacturing method of image display device |
| CN1698077A (en) * | 2003-03-06 | 2005-11-16 | 索尼株式会社 | Element transfer method and display device |
| CN104781922A (en) * | 2012-09-07 | 2015-07-15 | 勒克斯维科技公司 | Mass transfer tool |
| CN103456729A (en) * | 2013-07-26 | 2013-12-18 | 利亚德光电股份有限公司 | LED display screen |
| WO2017008253A1 (en) * | 2015-07-14 | 2017-01-19 | Goertek. Inc | Transferring method, manufacturing method, device and electronic apparatus of micro-led |
| CN106601657A (en) * | 2016-12-12 | 2017-04-26 | 厦门市三安光电科技有限公司 | Transfer system and transfer method of microelements, manufacturing method, device and electronic device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707197A (en) * | 2019-09-11 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | LED substrate and manufacturing method of LED display panel |
| US11430770B2 (en) | 2019-09-11 | 2022-08-30 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | LED substrate and method for manufacturing LED display panel |
| CN113555473A (en) * | 2021-07-27 | 2021-10-26 | 深圳市思坦科技有限公司 | Mass transfer method and system for Micro-LED chips and display device |
| CN113555473B (en) * | 2021-07-27 | 2022-10-11 | 深圳市思坦科技有限公司 | Mass transfer method and system for Micro-LED chips and display device |
| CN113611786A (en) * | 2021-08-02 | 2021-11-05 | 东莞市中麒光电技术有限公司 | LED chip bulk transfer method with high peeling yield and convenient film pouring |
| CN113611786B (en) * | 2021-08-02 | 2022-09-27 | 东莞市中麒光电技术有限公司 | LED chip bulk transfer method with high peeling yield and convenient film pouring |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200019133A (en) | 2020-02-21 |
| WO2019013120A1 (en) | 2019-01-17 |
| JP2019015899A (en) | 2019-01-31 |
| TW201919104A (en) | 2019-05-16 |
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