CN114902388A - Method for manufacturing electronic component and method for manufacturing display device - Google Patents
Method for manufacturing electronic component and method for manufacturing display device Download PDFInfo
- Publication number
- CN114902388A CN114902388A CN202180007808.0A CN202180007808A CN114902388A CN 114902388 A CN114902388 A CN 114902388A CN 202180007808 A CN202180007808 A CN 202180007808A CN 114902388 A CN114902388 A CN 114902388A
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- China
- Prior art keywords
- adhesive layer
- gas generating
- generating agent
- manufacturing
- sensitive adhesive
- Prior art date
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- Pending
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- 238000000034 method Methods 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 63
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims abstract description 129
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 115
- 239000010410 layer Substances 0.000 claims abstract description 101
- 239000012790 adhesive layer Substances 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 239000002390 adhesive tape Substances 0.000 claims description 16
- 238000003860 storage Methods 0.000 claims description 14
- 230000000638 stimulation Effects 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 description 45
- 230000001070 adhesive effect Effects 0.000 description 45
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- -1 azo compound Chemical class 0.000 description 23
- 239000003431 cross linking reagent Substances 0.000 description 15
- 238000005259 measurement Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 10
- 238000006116 polymerization reaction Methods 0.000 description 10
- 239000003505 polymerization initiator Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
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- 150000002513 isocyanates Chemical class 0.000 description 2
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- ZQMHJBXHRFJKOT-UHFFFAOYSA-N methyl 2-[(1-methoxy-2-methyl-1-oxopropan-2-yl)diazenyl]-2-methylpropanoate Chemical compound COC(=O)C(C)(C)N=NC(C)(C)C(=O)OC ZQMHJBXHRFJKOT-UHFFFAOYSA-N 0.000 description 2
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- HGXJDMCMYLEZMJ-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy 2,2-dimethylpropaneperoxoate Chemical compound CC(C)(C)OOOC(=O)C(C)(C)C HGXJDMCMYLEZMJ-UHFFFAOYSA-N 0.000 description 1
- FVQMJJQUGGVLEP-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy 2-ethylhexaneperoxoate Chemical compound CCCCC(CC)C(=O)OOOC(C)(C)C FVQMJJQUGGVLEP-UHFFFAOYSA-N 0.000 description 1
- HCXVPNKIBYLBIT-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy 3,5,5-trimethylhexaneperoxoate Chemical compound CC(C)(C)CC(C)CC(=O)OOOC(C)(C)C HCXVPNKIBYLBIT-UHFFFAOYSA-N 0.000 description 1
- QEQBMZQFDDDTPN-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy benzenecarboperoxoate Chemical compound CC(C)(C)OOOC(=O)C1=CC=CC=C1 QEQBMZQFDDDTPN-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/95001—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/95053—Bonding environment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/40—Details of apparatuses used for either manufacturing connectors or connecting the semiconductor or solid-state body
- H01L2924/401—LASER
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
Abstract
The invention aims to provide a method for manufacturing an electronic component, which is used for transferring a chip component onto a driving circuit substrate from a transfer laminated body with the chip component arranged on a transfer substrate with an adhesive layer. Another object of the present invention is to provide a method for manufacturing a display device, which includes the method for manufacturing the electronic component. The present invention relates to a method for manufacturing an electronic component, the method comprising: a step (1) of bringing a transfer laminate, in which a chip component is disposed on a transfer substrate having an adhesive layer containing a gas generating agent, into close proximity with a driver circuit board and aligning the chip component with the driver circuit board; and a step (2) of applying a stimulus to the gas generating agent-containing pressure-sensitive adhesive layer to transfer the chip component from the transfer laminate onto the driver circuit board.
Description
Technical Field
The present invention relates to a method for manufacturing an electronic component, in which a chip component is transferred onto a driver circuit board from a transfer laminate in which the chip component is disposed on a transfer substrate having an adhesive layer, the method being capable of reducing residues of the adhesive layer and transferring the chip component with good yield. In addition, the present invention relates to a method of manufacturing a display device including the method of manufacturing the electronic component.
Background
The micro LED display is a display device as follows: the individual chips constituting the pixels are fine Light Emitting Diode (LED) chips, and the micro LED chips self-emit Light to display an image. The micro LED display has high contrast and high response speed, and can be thinned without requiring a color filter or the like used in a liquid crystal display, an organic EL display, or the like, and thus has attracted attention as a next-generation display device.
In the micro LED display, a plurality of micro LED chips are laid in a planar shape at high density. When manufacturing such a micro LED display, the following steps are performed: and transferring the micro LED chips onto the driving circuit board from a transfer laminate in which a plurality of micro LED chips are arranged on a transfer substrate having an adhesive layer, and electrically connecting the micro LED chips.
In the transfer step of the micro LED chips, the micro LED chips are peeled off from the transfer laminate and transferred in a state where the surface of the transfer laminate on which the LED chips are arranged is opposed to the surface of the drive circuit board on which the electrodes are formed.
As a method for peeling the micro LED chip from the transfer laminate, for example, there are known: a method of peeling the micro LED chip by irradiating the pressure-sensitive adhesive layer with a laser beam focused from the back surface of the substrate of the transfer laminate (for example, patent document 1). Further, the following methods are also known: a method of using an adhesive layer containing thermally expandable particles, thermally expandable microcapsules, or the like, and thermocompression bonding the transfer laminate to the drive circuit board, thereby thermally expanding the thermally expandable particles, thermally expandable microcapsules, or the like, thereby deforming the adhesive layer, reducing the bonding area, and peeling the micro LED chip (for example, patent documents 2 and 3).
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2019-138949
Patent document 2: japanese patent laid-open publication No. 2019-15899
Patent document 3: japanese patent laid-open publication No. 2003-7986
Disclosure of Invention
Problems to be solved by the invention
However, the methods of irradiating laser light, and the methods of using thermally expandable particles, thermally expandable microcapsules, and the like as described in patent documents 1 to 3 have a problem that residues of the adhesive layer adhere to the micro LED chip. In addition, in the method using the thermally expandable particles, the thermally expandable microcapsules, or the like, since the micro LED chips are peeled off by the deformation of the adhesive layer, there is also a problem that it is difficult to transfer the micro LED chips onto the driver circuit substrate with good yield.
An object of the present invention is to provide an electronic component manufacturing method for transferring a chip component from a transfer laminate in which the chip component is arranged on a transfer substrate having an adhesive layer to a drive circuit substrate, the electronic component manufacturing method being capable of reducing residues of the adhesive layer and transferring the chip component with good yield. Another object of the present invention is to provide a method for manufacturing a display device, which includes the method for manufacturing the electronic component.
Means for solving the problems
The present invention relates to a method for manufacturing an electronic component, the method comprising: a step (1) of bringing a transfer laminate, in which a chip component is disposed on a transfer substrate having an adhesive layer containing a gas generating agent, into close proximity with a driver circuit board and aligning the chip component with the driver circuit board; and (2) applying a stimulus to the adhesive layer containing a gas generating agent to transfer the chip component from the transfer laminate onto the drive circuit board.
The present invention will be described in detail below.
The present inventors have studied the following: in a method for manufacturing an electronic component in which a chip component is transferred onto a drive circuit board from a transfer laminate in which the chip component is disposed on a transfer substrate having an adhesive layer, the chip component is peeled off from the transfer laminate and transferred by applying a stimulus to the adhesive layer containing a gas generating agent using the adhesive layer containing the gas generating agent. The present inventors have found that, according to such a method, the residue of the adhesive layer is reduced, and the chip component can be transferred with good yield, and have completed the present invention.
Fig. 1, 6 and 7 schematically illustrate an example of a process of the method for manufacturing an electronic component according to the present invention. Hereinafter, a method for manufacturing an electronic component according to the present invention will be described with reference to fig. 1, 6, and 7.
In the method for manufacturing an electronic component of the present invention, first, step (1): a transfer laminate having a chip component disposed on a transfer substrate having a pressure-sensitive adhesive layer containing a gas generating agent is brought into close proximity to a driver circuit board, and the chip component and the driver circuit board are aligned.
Fig. 1 is a diagram schematically showing an example of the step (1) in the method for manufacturing an electronic component according to the present invention. In the step (1), as shown in fig. 1, the transfer laminate 6 having the chip component 1 disposed on the transfer substrate 9 is brought close to the driver circuit board 7, and the chip component 1 and the driver circuit board 7 are aligned. In fig. 1, chip component 1 and driving circuit board 7 have electrode 1a and electrode 7a, respectively.
In fig. 1, the transfer substrate 9 is a laminate composed of a support 5 and a double-sided pressure-sensitive adhesive tape 4 having at least a pressure-sensitive adhesive layer containing a gas generating agent. However, in the method for manufacturing an electronic component according to the present invention, the transfer substrate is not limited to such a configuration.
The transfer laminate is provided with a chip component on a transfer substrate having a pressure-sensitive adhesive layer containing a gas generating agent.
The chip component is not particularly limited, and examples thereof include: micro LED chips, optical chips of picture sensors, etc. The chip component is a micro LED chip, and a method for manufacturing a display device including the method for manufacturing an electronic component of the present invention is also one aspect of the present invention.
In the transfer laminate, the chip component is disposed on the gas generating agent-containing pressure-sensitive adhesive layer of the transfer substrate.
In the method for manufacturing an electronic component according to the present invention, the adhesive layer containing a gas generating agent is used, and the chip component is peeled from the transfer substrate by applying a stimulus to the adhesive layer containing a gas generating agent in step (2) described later, whereby the residue of the adhesive layer containing a gas generating agent can be reduced and the chip component can be transferred with a good yield.
The transfer substrate is not particularly limited as long as it has a pressure-sensitive adhesive layer containing a gas generating agent, and for example, may be a single-sided pressure-sensitive adhesive tape in which a pressure-sensitive adhesive layer containing a gas generating agent is laminated on one side of a base material. That is, such a single-sided pressure-sensitive adhesive tape itself is the transfer substrate without a support or the like.
As shown in fig. 1, the transfer substrate may be a laminate of a support and a double-sided pressure-sensitive adhesive tape having at least a pressure-sensitive adhesive layer containing a gas generating agent. From the viewpoint of handling properties in production, the transfer substrate is preferably a laminate composed of a support and a double-sided pressure-sensitive adhesive tape having at least a pressure-sensitive adhesive layer containing a gas generating agent. The support is not particularly limited, and examples thereof include: glass substrates, metal substrates, organic substrates, and the like.
The double-sided adhesive tape having at least a gas generating agent-containing adhesive layer is not particularly limited, and preferably further has a support-side adhesive layer in addition to the gas generating agent-containing adhesive layer (chip-part-side adhesive layer). That is, the double-sided pressure-sensitive adhesive tape having at least the pressure-sensitive adhesive layer containing a gas generating agent is preferably a double-sided pressure-sensitive adhesive tape having a pressure-sensitive adhesive layer containing a gas generating agent and a support-side pressure-sensitive adhesive layer.
Fig. 2 is a cross-sectional view schematically showing an example of a double-sided adhesive tape having at least a pressure-sensitive adhesive layer containing a gas generating agent, which is used in the method for producing an electronic component according to the present invention.
The double-sided adhesive tape 4 shown in fig. 2 is a double-sided adhesive tape which is obtained by laminating a pressure-sensitive adhesive layer (chip component-side pressure-sensitive adhesive layer) 4b containing a gas generating agent and a support-side pressure-sensitive adhesive layer 4a and does not have a base material. Although not shown, a chip component is disposed on the adhesive layer (chip component-side adhesive layer) 4b containing a gas generating agent, and the support-side adhesive layer 4a is used by bonding to a support.
In the case where the transfer substrate includes the support, and the double-sided pressure-sensitive adhesive tape having the pressure-sensitive adhesive layer containing the gas generating agent and the support-side pressure-sensitive adhesive layer, the double-sided pressure-sensitive adhesive tape having the pressure-sensitive adhesive layer containing the gas generating agent and the support-side pressure-sensitive adhesive layer preferably satisfies the following points. That is, when the peeling force of the gas generating agent-containing pressure-sensitive adhesive layer in the 180 ° direction with respect to the SUS plate is Fb and the peeling force of the supporter-side pressure-sensitive adhesive layer in the 180 ° direction with respect to the SUS plate is Fa, Fa > Fb and Fa is preferably 1N/inch or more.
By setting Fa > Fb and Fa to 1N/inch or more, the chip component can be easily peeled while suppressing peeling of the support and the double-sided adhesive tape. This allows the chip components to be transferred with higher yield.
A more preferable lower limit of Fa is 2N/inch, and a still more preferable lower limit is 5N/inch. The upper limit of Fa is not particularly limited, and the upper limit is substantially about 50N/inch.
The Fb is not particularly limited, but a preferable upper limit is 0.3N/inch. If Fb is 0.3N/inch or less, the chip component can be easily peeled off, and the chip component can be transferred with a higher yield. A more preferable upper limit of Fb is 0.2N/inch, and a still more preferable upper limit is 0.1N/inch. The lower limit of Fb is not particularly limited, and is preferably 0.02N/inch from the viewpoint of suppressing unintentional detachment and removing residues by peeling the chip components due to gas generation, or from the viewpoint of reducing peeling stress applied to the chip components.
When the pressure-sensitive adhesive layer containing a gas generating agent and the support-side pressure-sensitive adhesive layer are curable pressure-sensitive adhesive layers, Fb and Fa are peel forces after curing by light irradiation or the like. Examples of the method for curing the gas generating agent-containing pressure-sensitive adhesive layer and the support-side pressure-sensitive adhesive layer by light irradiation include: using an ultra-high pressure mercury ultraviolet irradiator to obtain a cumulative dose of 2000mJ/cm 2 The method of irradiating the adhesive layer with 365nm ultraviolet rays. The irradiation intensity in this case is not particularly limited, but is preferably 50 to 500mW/cm 2 。
Examples of the method for measuring Fb and Fa include: the double-sided adhesive tape was peeled off at a stretching speed of 300mm/min in a 180 ° direction under an environment of a temperature of 23 ℃ and a relative humidity of 50% by using Autograph (manufactured by shimadzu corporation), and a method of peeling off was measured.
By incorporating a gas generating agent into the gas generating agent-containing pressure-sensitive adhesive layer and applying a stimulus to the gas generating agent-containing pressure-sensitive adhesive layer to generate a gas, a gap formed by the gas can be generated between the gas generating agent-containing pressure-sensitive adhesive layer and the chip component, and the chip component can be easily peeled off. As a result, the residue of the adhesive layer containing the gas generating agent can be reduced, and the chip component can be transferred with good yield. In a more preferred aspect, the pressure-sensitive adhesive layer containing a gas generating agent is stimulated to generate a gas, whereby the chip component is peeled from the pressure-sensitive adhesive layer containing a gas generating agent, and the chip component can be transferred in a state in which a peeling stress is not easily applied to the chip component or by being naturally dropped.
The gas generating agent is not particularly limited, and is preferably a gas generating agent that generates gas by stimulation with light, heat, electromagnetic waves, electron beams, or the like. Examples of the light include: ultraviolet rays, laser light, and the like. Among these, a gas generating agent that generates gas by light is preferable.
The gas generating agent which generates gas by the stimulation is not particularly limited, and an azo compound, an azide compound, a carboxylic acid compound, or a tetrazole compound can be used as appropriate.
Examples of the azo compound include: 2, 2 '-azobis- (N-butyl-2-methylpropionamide), 2' -azobis { 2-methyl-N- [1, 1-bis (hydroxymethyl) -2-hydroxyethyl ] propionamide }, 2 '-azobis { 2-methyl-N- [2- (1-hydroxybutyl) ] propionamide }, 2' -azobis [ 2-methyl-N- (2-hydroxyethyl) propionamide ], 2-azobis [ N- (2-propenyl) -2-methylpropionamide ], 2 '-azobis (N-butyl-2-methylpropionamide), 2' -azobis (N-cyclohexyl-2-methylpropionamide) }, 2, 2 '-azobis [2- (5-methyl-2-imidazolin-2-yl) propane ] dihydrochloride, 2' -azobis [2- (2-imidazolin-2-yl) propane ] disulfate dihydrate (Japanese: ジサルフエイトジハイドロレート), 2 '-azobis [2- (3, 4, 5, 6-tetrahydropyrimidin-2-yl) propane ] dihydrochloride, 2' -azobis {2- [1- (2-hydroxyethyl) -2-imidazolin-2-yl ] propane } dihydrochloride, and, 2, 2 '-azobis [2- (2-imidazolin-2-yl) propane ], 2' -azobis (2-methylpropionamidine) hydrochloride, 2 '-azobis (2-aminopropane) dihydrochloride, 2' -azobis [ N- (2-carboxyacyl) -2-methyl-propionamidine ], 2 '-azobis {2- [ N- (2-carboxyethyl) amidine ] propane }, 2' -azobis (2-methylpropionamidoxime), dimethyl 2, 2 '-azobis (2-methylpropionate), dimethyl 2, 2' -azobisisobutyrate, 4 '-azobis (4-cyanocarbonic acid) (Japanese: 4, 4' - アゾビス (4- シアンカルボニツクアシツド))), 4, 4 '-azobis (4-cyanovaleric acid), 2' -azobis (2, 4, 4-trimethylpentane), and the like.
Examples of the azide compound include: and polymers having an azide group such as 3-azidomethyl-3-methyloxetane, p-xylyleneazide (Japanese: テレフタルアジド), p-tert-butylbenzoyl azide, and glycidyl azide polymers obtained by ring-opening polymerization of 3-azidomethyl-3-methyloxetane.
Examples of the carboxylic acid compound include: phenylacetic acid, felbinac, triphenylacetic acid, or salts thereof.
Examples of the tetrazole compound include: 1H-tetrazole, 5-phenyl-1H-tetrazole, 5-azobis-1H-tetrazole, or a salt thereof.
The content of the gas generating agent is not particularly limited, and a preferable lower limit to 100 parts by weight of the binder constituting the gas generating agent-containing pressure-sensitive adhesive layer is 1 part by weight, and a preferable upper limit is 100 parts by weight. When the content of the gas generating agent is 1 part by weight or more, the adhesive layer containing the gas generating agent has sufficient gas generation property, and the residue of the adhesive layer can be further reduced and the chip components can be transferred with good yield. If the content of the gas generating agent is 100 parts by weight or less, the adhesive layer containing the gas generating agent has sufficient adhesiveness, and the chip component can be prevented from unintentionally falling off. A more preferable lower limit of the content of the gas generating agent is 3 parts by weight, and a more preferable upper limit is 50 parts by weight.
The pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer containing a gas generating agent is not particularly limited, and may be any of a non-curable pressure-sensitive adhesive and a curable pressure-sensitive adhesive. Specifically, examples thereof include: rubber-based adhesives, acrylic adhesives, vinyl alkyl ether-based adhesives, silicone-based adhesives, polyester-based adhesives, polyamide-based adhesives, urethane-based adhesives, styrene-diene block copolymer-based adhesives, and the like. Among these, acrylic adhesives are preferable, and acrylic curable adhesives are more preferable, from the viewpoint of easy adjustment of the adhesive force.
Examples of the curable adhesive include a photocurable adhesive which is crosslinked and cured by light irradiation, a thermosetting adhesive which is crosslinked and cured by heating, and the like. Among these, a photocurable adhesive is preferable, and an ultraviolet curable adhesive is more preferable, because the residue of the gas generating agent-containing adhesive layer can be further reduced and the chip component can be transferred with good yield by curing the adhesive layer by light irradiation before or after the step (b) described later to increase the storage modulus. That is, the pressure-sensitive adhesive layer containing a gas generating agent is preferably a photocurable pressure-sensitive adhesive layer, and more preferably an ultraviolet-curable pressure-sensitive adhesive layer.
Examples of the photocurable adhesive include: a binder containing a polymerizable polymer as a main component and a photopolymerization initiator. Examples of the thermosetting adhesive include: a binder containing a polymerizable polymer as a main component and a thermal polymerization initiator.
The polymerizable polymer can be obtained, for example, as follows: a (meth) acrylic polymer having a functional group in the molecule (hereinafter referred to as a functional group-containing (meth) acrylic polymer) is synthesized in advance, and the polymer is obtained by reacting a compound having a functional group that reacts with the functional group in the molecule and a radical-polymerizable unsaturated bond (hereinafter referred to as a functional group-containing unsaturated compound).
The functional group-containing (meth) acrylic polymer can be obtained, for example, by: an alkyl acrylate and/or an alkyl methacrylate in which the number of carbon atoms of the alkyl group is usually in the range of 2 to 18, a functional group-containing monomer, and if necessary, another modifying monomer copolymerizable therewith are copolymerized.
The weight average molecular weight of the functional group-containing (meth) acrylic polymer is not particularly limited, and is usually about 20 to 200 ten thousand.
The weight average molecular weight can be determined by gel permeation chromatography, for example, using HSP gel HR MB-M6.0X 150mm as a column and THF as an eluent, at 40 ℃ and by polystyrene standards.
Examples of the functional group-containing monomer include: carboxyl group-containing monomers such as acrylic acid and methacrylic acid, hydroxyl group-containing monomers such as hydroxyethyl acrylate and hydroxyethyl methacrylate, and epoxy group-containing monomers such as glycidyl acrylate and glycidyl methacrylate. Examples of the functional group-containing monomer include isocyanate group-containing monomers such as ethyl isocyanate acrylate and ethyl isocyanate methacrylate, and amino group-containing monomers such as aminoethyl acrylate and aminoethyl methacrylate.
Examples of the other copolymerizable modifying monomer include: various monomers generally used for (meth) acrylic polymers such as vinyl acetate, acrylonitrile, and styrene.
In order to obtain the functional group-containing (meth) acrylic polymer, the raw material monomers may be subjected to a radical reaction in the presence of a polymerization initiator. As a method for radically reacting the raw material monomer, that is, as a polymerization method, conventionally known methods can be used, and examples thereof include: solution polymerization (boiling point polymerization or constant temperature polymerization), emulsion polymerization, suspension polymerization, bulk polymerization, and the like.
The polymerization initiator used in the radical reaction for obtaining the functional group-containing (meth) acrylic polymer is not particularly limited, and examples thereof include: organic peroxides, azo compounds, and the like. Examples of the organic peroxide include: 1, 1-bis (t-hexylperoxy) -3, 3, 5-trimethylcyclohexane, t-hexylperoxypivalate, t-butylperoxypivalate, 2, 5-dimethyl-2, 5-bis (2-ethylhexanoylperoxy) hexane, t-hexylperoxy-2-ethylhexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxyisobutyrate, t-butylperoxy-3, 5, 5-trimethylhexanoate, t-butylperoxylaurate, and the like. Examples of the azo compound include: azobisisobutyronitrile, azobiscyclohexanecarbonitrile, and the like. These polymerization initiators may be used alone, or two or more of them may be used in combination.
As the functional group-containing unsaturated compound to be reacted with the functional group-containing (meth) acrylic polymer, the same compounds as those of the functional group-containing monomer can be used depending on the functional group of the functional group-containing (meth) acrylic polymer. For example, when the functional group of the functional group-containing (meth) acrylic polymer is a carboxyl group, an epoxy group-containing monomer or an isocyanate group-containing monomer can be used. When the functional group of the functional group-containing (meth) acrylic polymer is a hydroxyl group, an isocyanate group-containing monomer can be used. When the functional group of the functional group-containing (meth) acrylic polymer is an epoxy group, an amide group-containing monomer such as a carboxyl group-containing monomer or acrylamide may be used. When the functional group of the functional group-containing (meth) acrylic polymer is an amino group, an epoxy group-containing monomer can be used.
Examples of the photopolymerization initiator contained in the photocurable adhesive include: a substance activated by irradiation with light having a wavelength of 250 to 800 nm. Examples of such photopolymerization initiators include: acetophenone derivative compounds such as methoxyacetophenone, benzoin ether compounds such as benzoin propyl ether and benzoin isobutyl ether, ketal derivative compounds such as benzyl dimethyl ketal and acetophenone diethyl ketal, and phosphine oxide derivative compounds. In addition, there can be mentioned: bis (. eta.5-cyclopentadienyl) titanocene derivative compounds, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, alpha-hydroxycyclohexylphenyl ketone, 2-hydroxymethylphenylpropane and the like. These photopolymerization initiators may be used alone or in combination of two or more.
Examples of the thermal polymerization initiator contained in the thermosetting adhesive include: and a substance which decomposes by heat to generate active radicals which initiate polymerization and curing. Specifically, examples thereof include: dicumyl peroxide, di-t-butyl peroxide, t-butyl peroxybenzoate, t-butyl hydroperoxide, benzoyl peroxide, cumene hydroperoxide, diisopropylbenzene hydroperoxide, p-menthane hydroperoxide, di-t-butyl peroxide, etc.
The commercial products of the thermal polymerization initiator are not particularly limited, and examples thereof include Perbutyl D, Perbutyl H, Perbutyl P, and Perpenta (Japanese: パーペンタ) H (both manufactured by Nissan oil Co., Ltd.). These thermal polymerization initiators may be used alone, or two or more thereof may be used in combination.
The gas generating agent-containing pressure-sensitive adhesive layer may further contain a radical polymerizable polyfunctional oligomer or monomer. The gas generating agent-containing pressure-sensitive adhesive layer is improved in photocurability and thermosetting properties by containing a radical polymerizable polyfunctional oligomer or monomer.
The polyfunctional oligomer or monomer is not particularly limited, and preferably has a weight average molecular weight of 1 ten thousand or less. In order to more efficiently perform three-dimensional reticulation of the gas generating agent-containing pressure-sensitive adhesive layer by light irradiation or heating, the multifunctional oligomer or monomer preferably has a weight average molecular weight of 5000 or less and the number of unsaturated bonds having radical polymerizability in the molecule is 2 to 20.
Examples of the polyfunctional oligomer or monomer include: trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, and methacrylates thereof. Further, examples of the polyfunctional oligomer or monomer include: 1, 4-butanediol diacrylate, 1, 6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate (Japanese: オリゴエステルアクリレート), and methacrylic acid esters thereof. These polyfunctional oligomers or monomers may be used alone or in combination of two or more.
The gas generating agent-containing pressure-sensitive adhesive layer may further contain an inorganic filler such as fumed silica. By containing the inorganic filler, the cohesive force of the gas generating agent-containing pressure-sensitive adhesive layer is improved, and the gas generating agent-containing pressure-sensitive adhesive layer can be attached to an adherend with sufficient adhesive force, and the adherend can be sufficiently fixed.
The pressure-sensitive adhesive layer containing a gas generating agent preferably contains a crosslinking agent. By containing the crosslinking agent, the cohesive force of the gas generating agent-containing pressure-sensitive adhesive layer is improved, and the gas generating agent-containing pressure-sensitive adhesive layer can be attached to an adherend with sufficient adhesive force, and can sufficiently fix the adherend.
The crosslinking agent is not particularly limited, and examples thereof include: isocyanate-based crosslinking agents, epoxy-based crosslinking agents, aziridine-based crosslinking agents, metal chelate-based crosslinking agents, and the like. Among these, isocyanate-based crosslinking agents are preferable in terms of further improving the adhesive strength.
The content of the crosslinking agent is preferably 0.01 parts by weight or more and 20 parts by weight or less with respect to 100 parts by weight of the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer containing a gas generating agent. When the content of the crosslinking agent is within the above range, the adhesive can be appropriately crosslinked to improve the adhesive strength. From the viewpoint of further improving the adhesive force, the content of the crosslinking agent is more preferably 0.05 parts by weight at the lower limit, more preferably 15 parts by weight at the upper limit, still more preferably 0.1 parts by weight at the lower limit, and still more preferably 10 parts by weight at the upper limit.
The gas generating agent-containing pressure-sensitive adhesive layer may contain known additives such as a plasticizer, a resin, a surfactant, a wax, and a fine particle filler. These additives may be used alone or in combination of two or more.
The gel fraction of the gas generating agent-containing pressure-sensitive adhesive layer is preferably 20% by weight or more and less than 95% by weight. When the gel fraction is within the above range, the adhesive sheet can be attached to an adherend with sufficient adhesive force, and the adherend can be sufficiently fixed. The gel fraction of the pressure-sensitive adhesive layer is more preferably 30% by weight or more, and still more preferably 90% by weight or less, from the viewpoint of improving the adhesive strength.
When the gas generating agent-containing pressure-sensitive adhesive layer is a curable pressure-sensitive adhesive layer, the gel fraction refers to the gel fraction before curing by light irradiation or the like.
The storage modulus of the pressure-sensitive adhesive layer containing the gas generating agent before stimulation was 1.0X 10 4 Pa or above. If the storage modulus before the above stimulus is applied is 1.0X 10 4 Pa or more can sufficiently hold the chip component, and can further reduce the residue of the adhesive layer containing the gas generating agent, thereby transferring the chip component with a higher yield. A more preferable lower limit of the storage modulus before the application of the stimulus is 5.0X 10 4 Pa. From the viewpoint of sufficiently holding the chip component and improving the peeling, the upper limit of the storage modulus before the stimulus application is preferably 5.0 × 10 7 Pa, more preferably an upper limit of 5.0X 10 6 Pa, more preferably an upper limit of 1.0X 10 6 Pa。
In the case where the pressure-sensitive adhesive layer containing a gas generating agent is a curable pressure-sensitive adhesive layer, the storage modulus before application of the stimulus means the storage modulus before curing by light irradiation or the like and before application of the stimulus.
The storage modulus of the gas generating agent-containing pressure-sensitive adhesive layer before the stimulation can be measured, for example, as follows.
A measurement sample of the pressure-sensitive adhesive layer containing only the gas generating agent was prepared so that the thickness became 400 μm. The measurement sample was measured using a viscoelastic spectrometer (DVA-200, manufactured by IT measurement and control Co., Ltd., or equivalent) under conditions of a shear mode, a temperature rise rate of 10 ℃/min, and a frequency of 10 Hz. The storage modulus at 23 ℃ at this time was set as the storage modulus before stimulation was applied.
The thickness of the gas generating agent-containing pressure-sensitive adhesive layer is not particularly limited, and is preferably 200 μm or less. When the thickness is 200 μm or less, the residue of the adhesive layer containing the gas generating agent can be further reduced and the chip component can be transferred. A more preferable upper limit of the thickness is 50 μm, and a further more preferable upper limit is 20 μm. The lower limit of the thickness is not particularly limited, but from the viewpoint of holding the chip component and improving the peeling, the lower limit is preferably 2 μm, and the lower limit is more preferably 5 μm.
The pressure-sensitive adhesive constituting the support-side pressure-sensitive adhesive layer is not particularly limited, and the same pressure-sensitive adhesive as that constituting the pressure-sensitive adhesive layer containing a gas generating agent can be used. Among them, acrylic adhesives are preferable because of excellent heat resistance and easy adjustment of adhesive force.
Examples of the acrylic adhesive include adhesives containing a (meth) acrylic polymer as a main component. The (meth) acrylic polymer can be obtained, for example, in the same manner as the functional group-containing (meth) acrylic polymer, by: an alkyl acrylate and/or an alkyl methacrylate in which the number of carbon atoms of the alkyl group is usually in the range of 2 to 18, and further, if necessary, another modifying monomer copolymerizable therewith are copolymerized.
The double-sided pressure-sensitive adhesive tape having at least a pressure-sensitive adhesive layer containing a gas generating agent may be of a supported type having a base material or of an unsupported type having no base material.
Specifically, for example, in the case of a support type having a base material, the double-sided adhesive tape may be one having the gas generating agent-containing adhesive layer (chip component-side adhesive layer) on one surface of the base material and the support-side adhesive layer on the other surface of the base material. In the case of the unsupported type having no substrate, the pressure-sensitive adhesive layer containing the gas generating agent (chip component-side pressure-sensitive adhesive layer) may be a double-sided pressure-sensitive adhesive tape in which the support-side pressure-sensitive adhesive layer is laminated.
The material of the substrate is not particularly limited, and a heat-resistant material is preferable. Examples of the material of the substrate include: polyethylene terephthalate, polyethylene naphthalate, polyacetal, polyamide, polycarbonate, polyphenylene ether, polybutylene terephthalate, ultrahigh molecular weight polyethylene, syndiotactic polystyrene, polyarylate, polysulfone, polyethersulfone, polyphenylene sulfide, polyetheretherketone, polyimide, polyetherimide, fluororesin, liquid crystal polymer, or the like. Among them, polyethylene terephthalate and polyethylene naphthalate are preferable because they have excellent heat resistance.
The thickness of the substrate is not particularly limited, but the lower limit is preferably 5 μm and the upper limit is preferably 188 μm. By setting the thickness of the base material within the above range, a double-sided pressure-sensitive adhesive tape having an appropriate stiffness (japanese character: コシ) and excellent handling properties can be produced. A more preferable lower limit and a more preferable upper limit of the thickness of the substrate are 12 μm and 125 μm, respectively.
The method of disposing the chip components on the transfer substrate is not particularly limited, and examples thereof include: a method of directly disposing the chip component on the gas generating agent-containing pressure-sensitive adhesive layer of the transfer substrate; and a method of transferring the chip components from the temporary laminate on which the chip components are arranged to the transfer substrate. From the viewpoint of productivity, a method of transferring the chip components from the temporary laminated body on which the chip components are arranged to the transfer substrate is preferable.
The method of transferring and disposing the chip components on the transfer substrate from the temporary laminate in which the chip components are arranged is not particularly limited, and examples thereof include a method including the following steps (a), (b), and (c).
That is, first, the step (a) of preparing a temporary stacked body in which the chip components are arranged is performed. Next, the step (b) of bonding the surface of the temporary stacked body on which the chip components are arranged to the gas generating agent-containing pressure-sensitive adhesive layer of the transfer substrate is performed. Further, the step (c) of separating the temporary substrate constituting the temporary laminate from the chip component to obtain a transfer laminate in which the chip component is arranged on the transfer substrate is performed.
In the step (a), a temporary stacked body in which the chip components are arranged is prepared.
Fig. 3 is a cross-sectional view schematically showing an example of a temporary laminated body used in the method for manufacturing an electronic component according to the present invention. In the temporary laminated body 3 shown in fig. 3, a plurality of chip components 1 each having an electrode 1a on the surface thereof are arranged on a temporary substrate 2 so as to be in contact with one surface having the electrode 1 a.
The chip component is generally manufactured through the following chip component manufacturing process including: and a step of forming an electrode on the surface of the glass substrate or the like in a state of being temporarily fixed to a support such as a glass substrate via a temporary fixing adhesive layer. Then, the plurality of manufactured chip components are bonded to a temporary substrate, and then peeled off from the temporary fixing adhesive layer and the support, thereby being arranged on the temporary substrate.
The temporary substrate is not particularly limited, and examples thereof include: glass substrates, metal substrates, organic substrates, and the like. The temporary substrate preferably has an adhesive layer for placing the chip component on the temporary substrate. Preferably, the peeling force between the adhesive layer for disposing the chip component and the chip component is small.
Next, in the step (b), the surface of the temporary stacked body on which the chip components are arranged is bonded to the gas generating agent-containing adhesive layer of the transfer substrate.
Fig. 4 is a diagram schematically showing an example of step (b) in the method for manufacturing an electronic component according to the present invention. In the step (b), as shown in fig. 4, the surface of the temporary laminate in which the chip components 1 are arranged on the temporary substrate 2 on which the chip components 1 are arranged is bonded to the adhesive layer containing the gas generating agent on the transfer substrate 9. That is, the back surface of the chip component 1 is bonded to the adhesive layer containing the gas generating agent on the transfer substrate 9.
In fig. 4, the transfer substrate 9 is a laminate composed of a support 5 and a double-sided pressure-sensitive adhesive tape 4 having at least a pressure-sensitive adhesive layer containing a gas generating agent. However, in the method for manufacturing an electronic component according to the present invention, the transfer substrate is not limited to such a configuration.
The method of bonding the surface of the temporary laminate on which the chip components are arranged to the gas generating agent-containing pressure-sensitive adhesive layer of the transfer substrate is not particularly limited, and a flip chip bonder (for example, FC-3000, manufactured by toray engineering corporation, or the like) may be used.
Next, in the step (c), the temporary substrate and the chip component are peeled off to obtain a transfer laminate in which the chip component is arranged on the transfer substrate.
Fig. 5 is a diagram schematically showing an example of a hall (c) in the method for manufacturing an electronic component according to the present invention. In the hall (c), the temporary substrate and the chip component are separated from each other, whereby a transfer laminate 6 in which the chip component 1 is disposed on the transfer substrate 9 is obtained as shown in fig. 5.
The method of peeling the temporary substrate from the chip component is not particularly limited, and for example, the temporary substrate may be peeled from the chip component by peeling.
In the step (1), the transfer laminate thus obtained is brought close to a driver circuit board, and the chip components are aligned with the driver circuit board.
A method of aligning the chip components with the driver circuit board is not particularly limited, and a flip chip bonder (for example, FC-3000, manufactured by toray engineering, inc., or the like) may be used.
In the step (1), the chip component and the driver circuit board may be separated from each other as shown in fig. 1 or may be connected to each other. In view of suppressing damage due to contact between the chip component and the driver circuit board, the chip component is preferably separated from the driver circuit board.
In the method for manufacturing an electronic component according to the present invention, after the step (1), a step (2) of applying a stimulus to the adhesive layer containing a gas generating agent to transfer the chip component from the transfer laminate onto the drive circuit board is performed.
Thereby, the chip component is connected to the drive circuit board.
The driving circuit board is not particularly limited, and an adhesive layer is usually formed on the surface of the driving circuit board to connect and conduct with the chip component, and the driving circuit board preferably has an anisotropic conductive film or an anisotropic conductive adhesive on the surface. In the step (2), it is preferable that the electrodes on the chip components are electrically connected to the electrodes on the driving circuit board.
In the step (2), the stimulation may be applied to the entire gas generating agent-containing pressure-sensitive adhesive layer, or may be applied to each chip component region of the gas generating agent-containing pressure-sensitive adhesive layer to be peeled. In the case where a stimulus is applied to the entire gas generating agent-containing pressure-sensitive adhesive layer, it is preferable in terms of being able to transfer a plurality of chip components together, and in the case where a stimulus is applied to each chip component region of the gas generating agent-containing pressure-sensitive adhesive layer to be peeled off, it is preferable in terms of selectively transferring only the target chip component.
In the case where the gas generating agent-containing pressure-sensitive adhesive layer is a curable pressure-sensitive adhesive layer, for example, the curing of the gas generating agent-containing pressure-sensitive adhesive layer by light irradiation or the like and the stimulation of the gas generating agent-containing pressure-sensitive adhesive layer may be performed simultaneously.
Fig. 6 is a diagram schematically showing an example of step (2) in the method for manufacturing an electronic component according to the present invention. In the step (2), as shown in fig. 6, for example, the entire gas generating agent-containing pressure-sensitive adhesive layer of the double-sided pressure-sensitive adhesive tape 4 having at least a pressure-sensitive adhesive layer containing a gas generating agent is stimulated by ultraviolet rays, so that the chip component 1 is peeled off from the transfer substrate 9 and the chip component 1 is transferred onto the drive circuit substrate 7.
Fig. 7 is a view schematically showing another example of step (2) in the method for manufacturing an electronic component according to the present invention. In the step (2), for example, as shown in fig. 7, the light 8a irradiated by the light irradiation device 8 is applied to each chip component region to be peeled of the gas generating agent-containing pressure-sensitive adhesive layer of the double-sided pressure-sensitive adhesive tape 4 having at least the gas generating agent-containing pressure-sensitive adhesive layer, and the chip component 1 is peeled from the transfer substrate 9 and transferred onto the drive circuit substrate 7.
In the method for manufacturing an electronic component according to the present invention, the chip component is peeled from the transfer substrate by applying a stimulus to the adhesive layer containing the gas generating agent, whereby the residue of the adhesive layer containing the gas generating agent can be reduced and the chip component can be transferred with a good yield.
The stimulus to be applied to the gas generating agent-containing pressure-sensitive adhesive layer is not particularly limited, and is preferably light, heat, electromagnetic waves, or electron beams. The light is not particularly limited, and is preferably ultraviolet light or laser light. In particular, when a stimulus is applied to the entire gas generating agent-containing pressure-sensitive adhesive layer, it is preferable to irradiate the pressure-sensitive adhesive layer with ultraviolet rays while condensing laser light or ultraviolet rays and irradiating the pressure-sensitive adhesive layer with a stimulus in each chip component region to be peeled.
Effects of the invention
According to the present invention, there can be provided a method for manufacturing an electronic component in which a chip component is transferred onto a driver circuit board from a transfer laminate in which the chip component is arranged on a transfer substrate having an adhesive layer, the method being capable of reducing residues of the adhesive layer and transferring the chip component at a good yield. Further, according to the present invention, a method for manufacturing a display device including the method for manufacturing an electronic component can be provided.
Drawings
Fig. 1 is a diagram schematically showing an example of step (1) in the method for manufacturing an electronic component according to the present invention.
Fig. 2 is a cross-sectional view schematically showing an example of a double-sided adhesive tape having at least a pressure-sensitive adhesive layer containing a gas generating agent, which is used in the method for producing an electronic component according to the present invention.
Fig. 3 is a cross-sectional view schematically showing an example of a temporary laminate used in the method for manufacturing an electronic component according to the present invention.
Fig. 4 is a diagram schematically showing an example of the step (b) in the method for manufacturing an electronic component according to the present invention.
Fig. 5 is a diagram schematically showing an example of step (c) in the method for manufacturing an electronic component according to the present invention.
Fig. 6 is a view schematically showing another example of step (2) in the method for manufacturing an electronic component according to the present invention.
Fig. 7 is a view schematically showing another example of step (2) in the method for manufacturing an electronic component according to the present invention.
Detailed Description
The mode of the present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples.
(Synthesis of (meth) acrylic Polymer A)
A reactor equipped with a thermometer, a stirrer, and a condenser was prepared. To this reactor, 51 parts by weight of 2-ethylhexyl acrylate as an alkyl (meth) acrylate, 37 parts by weight of isobornyl acrylate, 1 part by weight of acrylic acid as a functional group-containing monomer, 19 parts by weight of hydroxyethyl methacrylate, 0.01 part by weight of lauryl mercaptan, and 80 parts by weight of ethyl acetate were charged, and then the reactor was heated to start reflux. Then, 0.01 part by weight of 1, 1-bis (t-hexylperoxy) -3, 3, 5-trimethylcyclohexane as a polymerization initiator was added to the reactor, and polymerization was started under reflux. Then, 1-bis (t-hexylperoxy) -3, 3, 5-trimethylcyclohexane in an amount of 0.01 part by weight was added 1 hour after the start of the polymerization and 2 hours after the start of the polymerization, and tert-butyl peroxypivalate in an amount of 0.05 part by weight was added 4 hours after the start of the polymerization, to continue the polymerization reaction. Then, 8 hours after the start of the polymerization, an ethyl acetate solution of a functional group-containing (meth) acrylic polymer having a solid content of 55% by weight and a weight average molecular weight of 60 ten thousand was obtained.
To 100 parts by weight of the resin solid content of the obtained ethyl acetate solution containing the functional group-containing (meth) acrylic polymer was added 12 parts by weight of 2-isocyanatoethyl methacrylate, and the reaction was carried out to obtain a (meth) acrylic polymer a.
(preparation of adhesive solution A constituting the adhesive layer on the chip part side)
The obtained ethyl acetate solution of (meth) acrylic polymer A was mixed with 1.25 parts by weight of a crosslinking agent (S-diene (Japanese: エスダイン) curing agent UA, manufactured by Sekisui Fuller Co., Ltd.), 1 part by weight of a photoinitiator (Omnirad651, manufactured by Toyotsu Chemiplas Co., Ltd.), and 20 parts by weight of a gas generating agent (Vam-110, Fuji film, and Wako pure chemical industries, Ltd.) based on 100 parts by weight of the resin solid content. In this way, an ethyl acetate solution of the adhesive constituting the chip component-side adhesive layer was obtained.
(preparation of adhesive solution B constituting the adhesive layer on the chip part side)
An ethyl acetate solution of an adhesive constituting the adhesive layer on the chip component side was obtained by mixing 2 parts by weight of a crosslinking agent (S-diene curing agent UA, manufactured by Sekisui filler) with 100 parts by weight of a resin solid content of an ethyl acetate solution of an acrylic polymer (SK DYNE (japanese: ダイン)1495C, manufactured by sekishini chemical).
(preparation of adhesive solution C constituting the support body-side adhesive layer)
An ethyl acetate solution of the pressure-sensitive adhesive constituting the support-side pressure-sensitive adhesive layer was obtained by mixing 1 part by weight of a crosslinking agent (S-diene curing agent UA, manufactured by Sekisui filler) with 100 parts by weight of a resin solid content of an ethyl acetate solution of an acrylic polymer (SK DYNE 1604N, manufactured by sekiskati chemical).
(preparation of adhesive solution D constituting the support body-side adhesive layer)
An ethyl acetate solution of the pressure-sensitive adhesive constituting the support-side pressure-sensitive adhesive layer was obtained by mixing 0.5 parts by weight of a crosslinking agent (S-diene curing agent UA, manufactured by Sekisui filler) with 100 parts by weight of a resin solid content of an ethyl acetate solution of an acrylic polymer (SK DYNE 1495C, manufactured by Sekisui chemical).
(example 1)
(1) Production of double-sided adhesive tape
The obtained adhesive solution A constituting the adhesive layer on the chip component side was applied to a PET film (NS-50-C, manufactured by Nakamoto packages) subjected to a release treatment with a doctor blade so that the thickness of the dried film became 10 μm, and the film was allowed to stand at room temperature for 10 minutes. Then, the coating solution was dried by heating at 110 ℃ for 5 minutes using an oven previously heated to 110 ℃ to obtain a chip component side adhesive layer.
Similarly, the obtained pressure-sensitive adhesive solution C constituting the support-side pressure-sensitive adhesive layer was applied to a PET film (NS-50-MA, manufactured by Nakamoto Packs) subjected to a releasing treatment with a doctor blade so that the thickness of the dried film became 10 μm, and the film was allowed to stand at room temperature for 10 minutes. Then, the coating solution was dried using an oven previously heated to 110 ℃ for 5 minutes at 110 ℃ to obtain a support body-side adhesive layer. The double-sided adhesive tape is obtained by bonding the chip component-side adhesive layer and the support-side adhesive layer.
(2) Determination of Fa
The surface of SUS plate with a thickness of 1mm was washed with ethanol and sufficiently dried. The separator on the support-side pressure-sensitive adhesive layer side of the double-sided pressure-sensitive adhesive tape previously cut into a width of 25mm and a length of 10cm was peeled off, and a 2kg roller was reciprocated 1 time and attached to a SUS plate to obtain a laminate. Then, the separator on the adhesive layer side of the chip component was peeled off, and a 2kg roller was reciprocated 1 time to attach a PET film (Lumirror S10, manufactured by dongli corporation) having a thickness of 50 μm to the laminate, thereby obtaining a sample for measurement.
Then, an ultra-high pressure mercury ultraviolet irradiator was used to obtain a cumulative dose of 2000mJ/cm 2 The measurement sample was irradiated with 365nm ultraviolet light. The irradiation intensity was 100mW/cm 2 The illuminance is adjusted. The double-sided adhesive tape was peeled off at a tensile speed of 300mm/min in a 180 ° direction under an environment of 23 ℃ and 50% relative humidity by using Autograph (manufactured by shimadzu corporation), and the peeling force Fa was measured. The peel force before the measurement sample was irradiated with ultraviolet rays was measured in the same manner.
(3) Measurement of Fb
After a PET film (Lumirror S10, manufactured by dongli corporation) having a thickness of 50 μm was peeled off from the separator on the support-side pressure-sensitive adhesive layer side of the double-sided pressure-sensitive adhesive tape and attached thereto, the separator on the chip-part-side pressure-sensitive adhesive layer side was peeled off and attached to a SUS plate to prepare a sample for measurement. Otherwise, the measurement was performed in the same manner as the measurement of Fa described above.
(4) Measurement of storage modulus before ultraviolet irradiation
A measurement sample was prepared so that the thickness thereof became 400 μm, and only the pressure-sensitive adhesive layer on the chip component side was used. The measurement sample was measured using a viscoelastic spectrometer (DVA-200, manufactured by IT measurement and control Co., Ltd.) under conditions of a shear mode, a temperature increase rate of 10 ℃/min, and a frequency of 10 Hz. The storage modulus at 23 ℃ at this time was set as the storage modulus before the stimulus application (before curing by irradiation of ultraviolet rays and before the stimulus application).
(5) Bonding of chip component to support (production of transfer laminate)
The separator on the side of the pressure-sensitive adhesive layer on the support side of the double-sided pressure-sensitive adhesive tape was peeled off using a laminating apparatus (ATM-812, manufactured by Takatori corporation), and the double-sided pressure-sensitive adhesive tape was bonded to a support (quartz glass) to obtain a transfer substrate.
Then, the spacer on the chip-component-side pressure-sensitive adhesive layer side of the double-sided pressure-sensitive adhesive tape in the transfer substrate was peeled off, and an Si chip (1cm square and 700 μm thick) was mounted on the chip-component-side pressure-sensitive adhesive layer using a flip chip bonder (FC-3000, manufactured by toray engineering).
(6) Transfer of chip components
As the drive circuit substrate, a substrate having an adhesive layer on the surface (the peel force in the 180 ° direction with respect to the SUS plate is 0.2N/inch) was used. The chip components and the drive circuit board are aligned in position in the same manner as in fig. 1, except that the chip surface of the transfer laminate is brought into contact with the drive circuit board. Then, a high-pressure mercury ultraviolet irradiation apparatus (GWSM-300R, Takatori) was used so that the cumulative dose became 2000mJ/cm 2 The method (3) irradiating the whole chip component side adhesive layer with 365nm ultraviolet rays from the support side to apply the chip component side adhesiveThe entire layer is stimulated to generate gas, and the adhesive layer on the chip component side is cured (whole surface irradiation). The irradiation intensity was 100mW/cm 2 The illuminance is adjusted. After the irradiation, the transfer substrate is lifted up, and the chip component is transferred.
(example 2)
Chip components were transferred in the same manner as in example 1, except that the thicknesses of the chip component side adhesive layer and the support side adhesive layer were changed to 25 μm, respectively.
(example 3)
Chip components were transferred in the same manner as in example 1, except that the adhesive solution B constituting the chip component side adhesive layer was used.
(example 4)
A double-sided adhesive tape was produced in the same manner as in example 1. Instead of irradiating the entire chip-side adhesive layer with ultraviolet light (whole surface irradiation), ultraviolet light was condensed to 1cm square using a spot UV irradiation apparatus (LS5, manufactured by Hamamatsu Photonics Co., Ltd.) so that the irradiation intensity became 500mW/cm 2 Chip component transfer was performed in the same manner as in example 1, except that the chip component region to be peeled off of the adhesive layer on the chip component side was irradiated for 10 seconds.
(example 5)
Chip components were transferred in the same manner as in example 1, except that the adhesive solution D constituting the support-side adhesive layer was used.
< evaluation >
The examples were evaluated by the following methods. The results are shown in Table 1.
(1) Evaluation of transfer yield
The chip components of (6) above were transferred 5 times, and the case where all of the chip components were transferred 5 times was evaluated as "o", and the case where transfer was not performed even 1 time was evaluated as "x".
(2) Evaluation of residue
The chip components after transfer of the chip components of (6) above were observed by an optical microscope (manufactured by VHX-500F, Keyence) to evaluate the adhesion of the residue. For each chip component, a case where the residual adhesive portion of 0.1mm or more was 1 or less was regarded as "excellent", a case where the residual adhesive portion was 2 or more and 5 or less was regarded as "good", and a case where the residual adhesive portion was 5 or more and peeling failure was not observed was regarded as "x".
(3) Evaluation of separation between chip parts and double-sided adhesive tape (measurement of the number of times of Natural falling)
Chip components were transferred in the same manner as in example (6) except that the chip surface of the transfer laminate was separated from the drive circuit board by 1cm and the chip components were aligned with the drive circuit board. Evaluation was performed 5 times, and the number of times (number of drops) that the chip component after ultraviolet irradiation was naturally peeled off (dropped) from the chip component-side adhesive layer and transferred to the driver circuit board was confirmed was measured.
[ Table 1]
Industrial applicability
According to the present invention, there can be provided a method for manufacturing an electronic component in which a chip component is transferred onto a driver circuit board from a transfer laminate in which the chip component is arranged on a transfer substrate having an adhesive layer, the method being capable of reducing residues of the adhesive layer and transferring the chip component with good yield. In addition, according to the present invention, a method for manufacturing a display device including the method for manufacturing the electronic component can be provided.
Description of the reference numerals
1 chip component
1a electrode
2 temporary substrate
3 temporary laminate
4 double-sided adhesive tape having adhesive layer containing at least gas generating agent
4a support body side adhesive layer
4b adhesive layer containing gas generating agent (adhesive layer on chip component side)
5 support body
6 transfer laminate
7 drive circuit board
7a electrode
8 light irradiation device
8a light
9 transfer substrate
Claims (10)
1. A method of manufacturing an electronic component, the method comprising:
a step (1) of bringing a transfer laminate, in which a chip component is disposed on a transfer substrate having an adhesive layer containing a gas generating agent, into close proximity with a driver circuit board and aligning the chip component with the driver circuit board; and
and (2) applying a stimulus to the gas generating agent-containing pressure-sensitive adhesive layer to transfer the chip component from the transfer laminate onto the driver circuit board.
2. The method for manufacturing an electronic component according to claim 1,
in the step (2), a stimulus is applied to the entire pressure-sensitive adhesive layer containing the gas generating agent.
3. The method for manufacturing an electronic component according to claim 1,
in the step (2), a stimulus is applied to each chip component region to be peeled of the gas generating agent-containing adhesive layer.
4. The method for manufacturing an electronic component according to claim 1, 2 or 3,
in the step (2), the stimulus applied to the gas generating agent-containing pressure-sensitive adhesive layer is light, heat, electromagnetic waves, or electron beams.
5. The method for manufacturing an electronic component according to claim 1, 2, 3 or 4,
the transfer substrate has a support and a double-sided adhesive tape, wherein the double-sided adhesive tape has a gas generating agent-containing adhesive layer and a support-side adhesive layer, and when the peeling force of the gas generating agent-containing adhesive layer in the 180 DEG direction with respect to the SUS plate is represented by Fb and the peeling force of the support-side adhesive layer in the 180 DEG direction with respect to the SUS plate is represented by Fa, Fa > Fb and Fa is 1N/inch or more.
6. The method for manufacturing an electronic component according to claim 1, 2, 3, 4, or 5,
the gas generating agent-containing adhesive layer is an ultraviolet-curable adhesive layer.
7. The method for manufacturing an electronic component according to claim 5 or 6,
fb is 0.3N/inch or less.
8. The method for manufacturing an electronic component according to claim 1, 2, 3, 4, 5, 6, or 7,
the gas generating agent-containing adhesive layer has a storage modulus of 1.0X 10 before stimulation is applied 4 Pa or above.
9. The method for manufacturing an electronic component according to claim 1, 2, 3, 4, 5, 6, 7, or 8,
the thickness of the gas generating agent-containing pressure-sensitive adhesive layer is 200 [ mu ] m or less.
10. A method of manufacturing a display device, comprising the method of manufacturing an electronic component of claim 1, 2, 3, 4, 5, 6, 7, 8, or 9,
the chip component is a micro LED chip.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020-040069 | 2020-03-09 | ||
| JP2020040069 | 2020-03-09 | ||
| PCT/JP2021/008649 WO2021182318A1 (en) | 2020-03-09 | 2021-03-05 | Electronic-component production method and display device production method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114902388A true CN114902388A (en) | 2022-08-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180007808.0A Pending CN114902388A (en) | 2020-03-09 | 2021-03-05 | Method for manufacturing electronic component and method for manufacturing display device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2021182318A1 (en) |
| KR (1) | KR20220151599A (en) |
| CN (1) | CN114902388A (en) |
| TW (1) | TW202202590A (en) |
| WO (1) | WO2021182318A1 (en) |
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| TWI803990B (en) * | 2021-09-24 | 2023-06-01 | 友達光電股份有限公司 | Transfer device and transfer method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3959988B2 (en) | 2001-06-27 | 2007-08-15 | ソニー株式会社 | Element transfer method |
| JP2003218329A (en) * | 2001-11-15 | 2003-07-31 | Sekisui Chem Co Ltd | Method for manufacturing temporary transfer substrate and tft circuit board |
| JP4669649B2 (en) * | 2002-11-29 | 2011-04-13 | 積水化学工業株式会社 | Thermally expandable microcapsule and adhesive sheet |
| JP2006013000A (en) * | 2004-06-23 | 2006-01-12 | Sekisui Chem Co Ltd | Ic chip manufacturing method |
| TWI723178B (en) * | 2016-06-10 | 2021-04-01 | 美商應用材料股份有限公司 | Maskless parallel pick-and-place transfer of micro-devices |
| JP2019015899A (en) * | 2017-07-10 | 2019-01-31 | 株式会社ブイ・テクノロジー | Display device manufacturing method, chip component transferring method, and transferring member |
| JP6916525B2 (en) | 2018-02-06 | 2021-08-11 | 株式会社ブイ・テクノロジー | LED display manufacturing method |
-
2021
- 2021-03-05 CN CN202180007808.0A patent/CN114902388A/en active Pending
- 2021-03-05 JP JP2021515242A patent/JPWO2021182318A1/ja active Pending
- 2021-03-05 KR KR1020227018474A patent/KR20220151599A/en unknown
- 2021-03-05 WO PCT/JP2021/008649 patent/WO2021182318A1/en active Application Filing
- 2021-03-08 TW TW110108119A patent/TW202202590A/en unknown
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| JPWO2021182318A1 (en) | 2021-09-16 |
| TW202202590A (en) | 2022-01-16 |
| WO2021182318A1 (en) | 2021-09-16 |
| KR20220151599A (en) | 2022-11-15 |
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