JP2003218329A - Method for manufacturing temporary transfer substrate and tft circuit board - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a temporary transfer substrate and a TFT circuit board by using an adhesive agent whose traceability to a corrugated surface is satisfactory, which easily loses adhesive power by giving a stimulus and which can easily be peeled. <P>SOLUTION: The temporary transfer substrate is used when a TFT circuit formed on a primary substrate is transferred to a secondary substrate. The temporary transfer substrate is provided with a base material, a thermoplastic adhesive agent layer which is given on the base material, which includes gas generation agent generating gas by a stimulus and whose adhesive power drops by a stimulus. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temporary transfer substrate and a TFT using a pressure-sensitive adhesive which has good conformability to an uneven surface and can be easily peeled off by losing stimulus by giving an adhesive force. The present invention relates to a method for manufacturing a circuit board.

[0002]

2. Description of the Related Art In recent years, in the manufacture of TFT circuit boards
After forming the TFT circuit on the primary substrate once,
Method of peeling the secondary substrate and transferring it to the secondary substrate again
Is taken. As a method of peeling off the primary substrate
Is disclosed in, for example, Japanese Unexamined Patent Publication No. 2000-133809.
Between the FT circuit and the primary substrate is amorphous silicon or
A separation layer made of recon is provided, and the excimer layer is placed on this separation layer.
Laser, YAG laser, CO _TwoHigh energy such as laser
By irradiating with light having energy
A method of increasing the roughness of the interface with the tract and peeling is disclosed.
ing.

On the other hand, a temporary transfer substrate is adhered onto the TFT circuit in order to protect the TFT circuit and maintain the flatness of the substrate during the period from the peeling of the primary substrate to the transfer to the secondary substrate. Is done. However, on the TFT circuit board,
Since there are large irregularities due to TFT elements, etc.
To bond the circuit and the temporary transfer substrate, it is necessary to use an adhesive or a pressure-sensitive adhesive that has high conformability to the uneven surface. Furthermore, this adhesive or pressure-sensitive adhesive is required to be easily removable after transfer to the secondary substrate without damaging the TFT circuit.

Conventionally, a flexible water-soluble adhesive is used as this adhesive or pressure-sensitive adhesive, and the water-soluble adhesive is dissolved by washing with water after transfer to the secondary substrate, and the temporary transfer substrate is peeled off. Was taken. However, if the peeling is performed by such a wet process, there is a problem that the amount of treatment per unit time is significantly reduced and the yield of the products is also reduced.

Japanese Patent Laid-Open No. 2000-235348 discloses that
A method of bonding a TFT circuit and a temporary transfer substrate by curing a curable adhesive such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive, or an anaerobic curable adhesive is disclosed. ing. However, these curable adhesives have a problem that they cannot be easily peeled off after being cured, although they can be adhered to the uneven surface with flexibility and high flexibility before curing.

[0006]

SUMMARY OF THE INVENTION In view of the above situation, the present invention provides a pressure-sensitive adhesive which has good conformability to uneven surfaces and can be easily peeled off by losing its adhesive force by applying a stimulus. It is an object of the present invention to provide a method for manufacturing a temporary transfer substrate and a TFT circuit substrate used.

[0007]

The present invention is a temporary transfer substrate used for transferring a TFT circuit formed on a primary substrate to a secondary substrate, which is a base material and is provided on the base material. And a thermoplastic pressure-sensitive adhesive layer that contains a gas generating agent that generates a gas when stimulated and whose adhesive strength is reduced by stimulation. The present invention is described in detail below.

The temporary transfer substrate of the present invention contains a base material and a gas generating agent which is provided on the base material and generates a gas upon stimulation, and is a thermoplastic resin whose adhesive strength is reduced by stimulation. And a pressure-sensitive adhesive layer.

The structure of the temporary transfer substrate according to the embodiment of the present invention will be described with reference to FIG. As shown in Figure 1,
The temporary transfer substrate 1 of the present embodiment includes a base material 2 and an adhesive layer 3 applied on the base material 2.

As the base material 2, a material made of an appropriate material that supports the pressure-sensitive adhesive layer 3 and can firmly adhere to the pressure-sensitive adhesive layer 3 even when the pressure-sensitive adhesive layer 3 loses its adhesive force due to stimulation is used. be able to. Further, when the pressure-sensitive adhesive layer 3 is a thermoplastic pressure-sensitive adhesive whose adhesive force is reduced by stimulation with light, it is preferable that it is capable of transmitting or passing light. Although various synthetic resins and the like can be cited as materials for forming such a base material, polyethylene terephthalate is used in the present embodiment. Further, the surface of the base material 2 may be subjected to a treatment such as a corona treatment or a urethane treatment for the purpose of increasing the adhesive force.

The pressure-sensitive adhesive layer 3 is made of a thermoplastic pressure-sensitive adhesive which contains a gas generating agent which generates a gas upon stimulation, and whose adhesive strength is reduced by stimulation. The stimulus is not particularly limited, and examples thereof include stimulation with light, heat, and ultrasonic waves. Of these, stimulation by light and heat is preferable. Further, the stimulus for reducing the adhesive force of the adhesive and the stimulus for generating gas from the gas generating agent may be different. In addition, as an adhesive agent whose adhesive force is reduced by heat stimulation or a gas generating agent which generates a gas by heat stimulation, the temperature at which the adhesive force is lowered or a gas is generated is a base material, a TFT circuit or a secondary substrate. It is preferable to use a material having a temperature at which heat stress or strain is not applied.

Examples of the pressure-sensitive adhesive whose pressure-sensitive adhesive force is lowered by the above-mentioned stimulus include, for example, alkyl acrylate and / or methacrylic acid alkyl ester-based polymerizable polymers having a radical-polymerizable unsaturated bond in the molecule. When,
A photocurable pressure-sensitive adhesive containing a radically polymerizable polyfunctional oligomer or monomer as a main component, and optionally a photopolymerization initiator, or an acrylic having a radically polymerizable unsaturated bond in the molecule. A thermosetting pressure-sensitive adhesive containing a heat-polymerization initiator as a main component of an acid alkyl ester-based and / or methacrylic acid alkyl ester-based polymerizable polymer and a radically polymerizable polyfunctional oligomer or monomer. Is mentioned.

For the above-mentioned polymerizable polymer, for example, a (meth) acrylic polymer having a functional group in the molecule (hereinafter, also referred to as a functional group-containing (meth) acrylic polymer) is synthesized in advance, and It can be obtained by reacting with a compound having a functional group that reacts with a functional group and a radical-polymerizable unsaturated bond (hereinafter, also referred to as a functional group-containing unsaturated compound). In the present specification, the (meth) acrylic polymer means an acrylic polymer and a methacrylic polymer.

The above-mentioned functional group-containing (meth) acrylic polymer is a polymer having an adhesive property at room temperature, and like the general (meth) acrylic polymer, the alkyl group usually has a carbon number in the range of 2-18. Of the acrylic acid alkyl ester and / or the methacrylic acid alkyl ester as a main monomer, and a functional group-containing monomer and, if necessary, another modifying monomer which can be copolymerized therewith by a conventional method. It is obtained by The weight average molecular weight of the functional group-containing (meth) acrylic polymer is usually about 200 to 2,000,000.

Examples of the functional group-containing monomer include carboxyl group-containing monomers such as acrylic acid and methacrylic acid; hydroxyl group-containing monomers such as hydroxyethyl acrylate and hydroxyethyl methacrylate; glycidyl acrylate and glycidyl methacrylate. Epoxy group-containing monomers; isocyanate group-containing monomers such as isocyanate ethyl acrylate and isocyanate ethyl methacrylate; amino group-containing monomers such as aminoethyl acrylate and aminoethyl methacrylate.

Examples of the other copolymerizable modifying monomer include various monomers used for general (meth) acrylic polymers such as vinyl acetate, acrylonitrile and styrene.

The functional group-containing unsaturated compound to be reacted with the functional group-containing (meth) acrylic polymer is the same as the functional group-containing monomer described above depending on the functional group of the functional group-containing (meth) acrylic polymer. You can use one. For example, when the functional group of the functional group-containing (meth) acrylic polymer is a carboxyl group, an epoxy group-containing monomer or an isocyanate group-containing monomer is used, and when the functional group is a hydroxyl group, an isocyanate group-containing monomer is used. When the functional group is an epoxy group, a carboxyl group-containing monomer or an amide group-containing monomer such as acrylamide is used, and when the functional group is an amino group, an epoxy group-containing monomer is used.

The polyfunctional oligomer or monomer preferably has a molecular weight of 10,000 or less, and more preferably has a molecular weight of 5 so that the three-dimensional reticulation of the pressure-sensitive adhesive layer can be efficiently performed by irradiation with light. 2,000 or less and the number of radically polymerizable unsaturated bonds in the molecule is 2 to 6. Examples of such more preferable polyfunctional oligomers or monomers include, for example, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, and dimethacrylate. Examples thereof include pentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and methacrylates similar to the above. In addition, 1,4-butylene glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, polyethylene glycol di (meth) acrylate, commercially available oligoester (meth) acrylate, methacrylates similar to the above may be used. Can be mentioned. These polyfunctional oligomers or monomers may be used alone or in combination of two or more.

The photopolymerization initiator is, for example, 25
Examples thereof include those activated by irradiation with light having a wavelength of 0 to 800 nm. Examples of such photopolymerization initiators include acetophenone derivative compounds such as methoxyacetophenone; benzoinpropyl ether, benzoin isobutyl ether, and the like. Benzoin ether compounds; ketal derivative compounds such as benzyl dimethyl ketal and acetophenone diethyl ketal; phosphine oxide derivative compounds; bis (η5-cyclopentadienyl) titanocene derivative compounds, benzophenone, Michler's ketone, chlorothioxanthone, todecylthioxanthone, dimethylthioxanthone , Diethylthioxanthone, α-hydroxycyclohexyl phenyl ketone, 2
Examples thereof include a radical photopolymerization initiator such as hydroxymethylphenylpropane. These photopolymerization initiators may be used alone or in combination of two or more.

Examples of the above thermal polymerization initiator include those that decompose by heat to generate active radicals that initiate polymerization and curing. Specific examples include dicumyl peroxide, di-t-butyl peroxide, and the like. t-butyl peroxybenzole, t-butyl hydroperoxide, benzoyl peroxide, cumene hydroperoxide, diisopropylbenzene hydroperoxide, paramenthane hydroperoxide, di-t-
Butyl peroxide and the like can be mentioned. Among them, cumene hydroperoxide, paramenthane hydroperoxide, di-t-butyl peroxide and the like are preferable because of their high thermal decomposition temperature. Of these thermal polymerization initiators, commercially available ones are not particularly limited, but, for example, perbutyl D, perbutyl H, perbutyl P, permenta H (all of which are manufactured by NOF Corporation) and the like are preferable. These thermal polymerization initiators may be used alone or in combination of two or more.

In addition to the above components, the post-curing type pressure sensitive adhesive such as the photo-curing type pressure sensitive adhesive or the thermosetting type pressure sensitive adhesive may optionally contain an isocyanate compound and melamine for the purpose of adjusting the cohesive force of the pressure sensitive adhesive. You may mix | blend various polyfunctional compounds mix | blended with general adhesives, such as a compound and an epoxy compound, suitably. Further, known additives such as a plasticizer, a resin, a surfactant, a wax and a fine particle filler can be added.

In the above-mentioned post-curing type pressure-sensitive adhesive, the whole pressure-sensitive adhesive layer is uniformly and rapidly polymerized and crosslinked to be integrated by applying a stimulus, so that the elastic modulus is remarkably increased by the polymerization and curing, and the adhesive strength is increased. Greatly reduced.

As the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 3, one having a thermoplasticity is selected from the post-curable pressure-sensitive adhesives and used. When the adherend is made of a thermoplastic resin and pressed against the adherend while applying heat by a hot press, a thermal laminating, or the like, even an adherend having a surface with unevenness can be well followed and adhered.

The pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 3 further contains a gas generating agent which generates gas by stimulation. When the pressure-sensitive adhesive layer 3 is stimulated by containing the above-mentioned gas generating agent, the pressure-sensitive adhesive layer 3 as a whole is polymerized and cured to significantly reduce the adhesive strength, and at the same time, the gas generating agent in the pressure-sensitive adhesive generates gas. As a result, the adhesive strength is further reduced, and the adherend can be peeled off more easily.

The gas generating agent is not particularly limited, but for example, an azo compound and an azide compound are preferably used. Examples of the azo compound include 2,2′-azobis- (N-butyl-2-methylpropionamide) and 2,2′-azobis {2-methyl-N- [1,1.
-Bis (hydroxymethyl) -2-hydroxyethyl]
Propionamide}, 2,2'-azobis {2-methyl-N- [2- (1-hydroxybutyl)] propionamide}, 2,2'-azobis [2-methyl-N- (2-
Hydroxyethyl) propionamide], 2,2′-azobis [N- (2-propenyl) -2-methylpropionamide], 2,2′-azobis (N-butyl-2-methylpropionamide), 2,2 '-Azobis (N-cyclohexyl-2-methylpropionamide), 2,
2′-azobis [2- (5-methyl-2-imidazolin-2-yl) propane] dihydrochloride, 2,
2'-azobis [2- (2-imidazolazoline-2-yl) propane] dihydrochloride, 2,2'-azobis [2- (2-imidazolazoline-2-yl) propane] disulfate dihydrolate, 2 , 2'-Azobis [2- (3,4,5,6-tetrahydropyrimidin-2-yl) propane] dihydrochloride, 2,
2'-azobis {2- [1- (2-hydroxyethyl)
-2-Imidazoylin-2-yl] propane} dihydrochloride, 2,2'-azobis [2- (2-imidazolinyl-2-yl) propane], 2,2'-azobis (2-methylpropionamidine) Hydrochloride, 2,2'-azobis (2-aminopropane) dihydrochloride, 2,2'-azobis [N- (2-carboxyacyl) -2-methyl-propionamidine], 2,2'-azobis {2- [N- (2-carboxyethyl) amidine] propane}, 2,2'-azobis (2-methylpropionamide oxime), dimethyl 2,2'-azobis (2-methylpropionate), dimethyl 2 , 2'-azobisisobutyrate, 4,4'-
Azobis (4-cyancarbonic acid), 4,
4'-azobis (4-cyanopentanoic acid), 2,2'-azobis (2,4,4-trimethylpentane) and the like can be mentioned. In the manufacturing process of the TFT circuit, there is also a process of performing high temperature treatment, and therefore, among these, 2,2′-azobis- (N-butyl-2-methylpropionamide) and 2,2 ′ having a high thermal decomposition temperature are used. -Azobis (N-butyl-2-methylpropionamide),
2,2'-azobis (N-cyclohexyl-2-methylpropionamide) is preferred. These azo compounds generate nitrogen gas by being stimulated by light, heat or the like.

Examples of the azide compound include 3-
Examples thereof include azidomethyl-3-methyloxetane, terephthalazide, p-tert-butylbenzazide; polymers having an azide group such as glycidyl azide polymer obtained by ring-opening polymerization of 3-azidomethyl-3-methyloxetane. These azide compounds generate nitrogen gas when they are stimulated by light, heat, ultrasonic waves, shocks and the like.

Among these gas generating agents, the azide compound is easily decomposed even when shocked to release nitrogen gas, so that there is a problem that it is difficult to handle. Further, the above-mentioned azide compound causes a chain reaction once it starts to decompose, explosively releases nitrogen gas, and its control cannot be controlled. Therefore, the nitrogen gas explosively generated may damage the TFT circuit. There is also. Due to such a problem, the amount of the azide compound used is limited, but a sufficient effect may not be obtained with the limited amount used. On the other hand, unlike the azide compound, the azo compound does not generate a gas upon impact, and is therefore extremely easy to handle. In addition, the chain reaction does not cause explosive gas generation, so the TFT circuit is not damaged, and the gas generation can be interrupted by interrupting the stimulus application. There is also an advantage that is possible. Therefore, it is more preferable to use an azo compound as the gas generating agent.

The above-mentioned gas generating agent may be dispersed in the pressure-sensitive adhesive, but if the gas-generating agent is dispersed in the pressure-sensitive adhesive, the pressure-sensitive adhesive as a whole generates gas and becomes soft, thus giving irritation. As a result, the pressure-sensitive adhesive reducing mechanism of the post-curable pressure-sensitive adhesive, which hardens the pressure-sensitive adhesive to lower the pressure-sensitive adhesive strength, may not work properly. Therefore, it is preferable that the gas generating agent is contained only in the portion that is adhered to the adherend. If it is contained only in the adhesive part with the adherend, the pressure-sensitive adhesive can be made sufficiently hard by giving stimulation, and the gas generating agent generates gas at the adhesive part in contact with the adherend. As a result, the adhesive area of the interface is reduced, and the gas generated from the gas generating agent creates a pressure at the interface to generate a force for peeling the adhesive.

As a method of containing the gas generating agent only in the portion to be adhered to the adherend, for example, the gas generating agent having a thickness of about a primer is formed on a layer made of a thermoplastic pressure-sensitive adhesive prepared in advance. Examples include a method of applying a thermoplastic post-curing type adhesive containing, a method of applying a volatile liquid containing a gas generating agent or a method of uniformly attaching the gas generating agent to the surface by spraying with a spray or the like. To be

Next, an embodiment of a method of manufacturing a TFT circuit using the temporary transfer substrate of the present invention will be described with reference to FIGS. 2, 3, 4, 5 and 6. In manufacturing the TFT circuit, first, the circuit board 4 having the TFT circuit formed on the primary substrate is manufactured. In the present embodiment, as shown in FIG. 2, amorphous silicon (hereinafter, a-Si) is formed on the quartz substrate 5.
(Also referred to as) separation layer 6, underlying SiO ₂ layer 7, TF
The T circuit 8 is formed in order.

Next, a temporary transfer substrate is attached onto the TFT circuit formed on the primary substrate. Since there is a TFT circuit, there is unevenness on the surface, but by hot pressing or heat laminating, as shown in FIG. 3, the adhesive layer 3 on the temporary transfer substrate softens and follows the unevenness, The TFT circuit and the temporary transfer substrate can be adhered to each other.

Next, the primary substrate is peeled off from the TFT circuit on the primary substrate to which the temporary transfer substrate is attached. In the present embodiment, by irradiating the separation layer 6 with excimer laser from the back surface side of the quartz substrate 5, the separation layer 6 and the underlying Si layer are exposed.
The adhesion at the interface with the O ₂ layer 7 can be reduced, and the quartz substrate 5 and the separation layer 6 can be separated. Thereby, as shown in FIG. 4, the TFT circuit is transferred to the temporary transfer substrate.

Next, the secondary substrate is adhered to the TFT circuit to which the temporary transfer substrate from which the primary substrate has been peeled is attached. In this embodiment, the resin substrate 9 is used as the secondary substrate. As a result, as shown in FIG. 5, the temporary transfer substrate is attached onto the TFT circuit formed on the resin substrate 9.

Next, the pressure-sensitive adhesive layer on the temporary transfer substrate is stimulated. In the present embodiment, the pressure-sensitive adhesive layer 3 is irradiated with light having a wavelength that activates the above-described photopolymerization initiator from the base material side,
At the same time when the photo-curable adhesive is cured, the gas generating agent generates gas. The adhesive force of the pressure-sensitive adhesive layer 3 to the TFT circuit is lower than that before the light irradiation due to the curing of the photocurable pressure-sensitive adhesive and the generation of the gas of the gas generating agent.

Finally, the temporary transfer substrate is peeled off from the TFT circuit to which the secondary substrate is bonded. In this embodiment, as shown in FIG. 6, a circuit board in which a TFT circuit is formed on the resin substrate 9 is obtained. A method of manufacturing such a TFT circuit board is also one aspect of the present invention.

[0036]

The present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples.

Example 1 <Preparation of Temporary Transfer Substrate> The following compounds were dissolved in ethyl acetate and irradiated with ultraviolet rays to carry out polymerization to obtain a weight average molecular weight of 7:
0,000 acrylic copolymer was obtained. With respect to 100 parts by weight of the resin solid content of the ethyl acetate solution containing the obtained acrylic copolymer, 2-isocyanatoethyl methacrylate 3.5
20 parts by weight of pentaerythritol triacrylate, 0.5 parts by weight of benzophenone, and 0.3 parts by weight of polyisocyanate are added to 100 parts by weight of the resin solid content of the ethyl acetate solution after the reaction. An ethyl acetate solution of a photocurable pressure-sensitive adhesive (hereinafter, also referred to as pressure-sensitive adhesive (1)) was prepared by mixing. Butyl acrylate 79 parts by weight Ethyl acrylate 15 parts by weight Acrylic acid 1 part by weight 2-Hydroxyethyl acrylate 5 parts by weight Photoinitiator 0.2 parts by weight (Irgacure 651, 50% ethyl acetate solution) Lauryl mercaptan 0.01 parts by weight

2,2'-azobis- (N- was added to 100 parts by weight of the resin solid content of the ethyl acetate solution of the adhesive (1).
(Butyl-2-methylpropionamide) 100 parts by weight of ethyl acetate solution of a photocurable pressure-sensitive adhesive (hereinafter also referred to as pressure-sensitive adhesive (2)) containing a gas generating agent that generates a gas when stimulated by light. Was prepared.

An ethyl acetate solution of the pressure sensitive adhesive (1) was applied on one side of a transparent polyethylene terephthalate (PET) film having a thickness of 38 μm and the dry film thickness was about 30 μm. The coating solution was dried with a doctor knife so that the coating solution was heated to 110 ° C. for 5 minutes to volatilize the solvent and dry the coating solution. The dried pressure-sensitive adhesive layer exhibited tackiness in a dry state.

On the other hand, the ethyl acetate solution of the adhesive (2) was
A 38 μm-thick PET film whose surface has been subjected to a release treatment is applied so that the thickness after drying using a bar coater will be 10 μm, and heated at 110 ° C. for 5 minutes to volatilize the solvent and produce an adhesive. The layers were dried.

A pressure-sensitive adhesive (1) layer formed on a PET film having one surface subjected to corona treatment and a pressure-sensitive adhesive (2) layer formed on a PET film subjected to mold release treatment were bonded together. Then, it was cured at 40 ° C. for 3 days to obtain a temporary transfer substrate.

<Manufacture of TFT Circuit> A layer of a-Si having a thickness of 0.1 μm is formed on a 30 μm thick quartz substrate which is a primary substrate, and a SiO ₂ layer is further formed thereon. Formed. A TFT circuit was formed on this SiO ₂ layer.

PET which has been released from the temporary transfer substrate
The film was peeled off, placed on the TFT circuit on the quartz substrate so that the adhesive (2) layer was in contact with the TFT circuit, and heat laminated. As a result, the pressure-sensitive adhesive (1) layer and the pressure-sensitive adhesive (2) layer of the temporary transfer substrate were softened and adhered following the unevenness of the TFT circuit.

Then, the a-Si layer was irradiated with excimer laser from the quartz substrate side. As a result, the adhesiveness between the a-Si layer and the SiO ₂ layer was reduced, and the a-Si layer and the quartz substrate could be easily separated from the TFT circuit. Then, the resin substrate, which is the secondary substrate, is coated with SiO 2 using an adhesive.
Adhered to _two layers.

Then, an ultraviolet ray of 365 nm was irradiated from the PET side with an ultra-high pressure mercury lamp so that the irradiation intensity was 40 mW / cm ^2.
The illuminance was adjusted so that The temporary transfer substrate was peeled off from the TFT circuit to obtain a circuit substrate in which the TFT circuit was formed on the resin substrate. Here, the transfer from the quartz substrate to the resin substrate was all performed well.

[0046]

EFFECTS OF THE INVENTION According to the present invention, a temporary transfer substrate using a pressure-sensitive adhesive which has good conformability to uneven surfaces and can be easily peeled off by losing the adhesive force by applying a stimulus And the manufacturing method of a TFT circuit board can be provided.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of a temporary transfer substrate of the present invention.

FIG. 2 is a cross-sectional view showing a circuit board having a TFT circuit formed on a quartz substrate in an embodiment of the method for manufacturing a TFT circuit board of the present invention.

FIG. 3 is a cross-sectional view for explaining a state in which a temporary transfer substrate is adhered to a TFT circuit of a circuit substrate in which a TFT circuit is formed on a quartz substrate in an embodiment of the method for manufacturing a TFT circuit substrate of the present invention. .

FIG. 4 is a cross-sectional view for explaining a state in which the TFT circuit is transferred to the temporary transfer substrate in the embodiment of the method for manufacturing the TFT circuit substrate of the present invention.

FIG. 5 is a cross-sectional view for explaining a state in which a temporary transfer substrate is adhered to a TFT circuit of a circuit substrate in which a TFT circuit is formed on a resin substrate in an embodiment of the method for manufacturing a TFT circuit substrate of the present invention. .

FIG. 6 is a cross-sectional view showing a circuit board in which a TFT circuit is formed on a resin substrate in an embodiment of the method for manufacturing a TFT circuit board of the present invention.

[Explanation of symbols]

1 Temporary Transfer Substrate 2 Base Material 3 Adhesive Layer 4 Circuit Board 5 Quartz Substrate (Primary Substrate) 6 Separation Layer 7 Base SiO ₂ Layer 8 TFT Circuit 9 Resin Substrate (Secondary Substrate) 10 Adhesive Layer 11 Circuit Board

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) // G09F 9/00 338 H01L 29/78 627D 9/30 338 (72) Inventor Satoshi Hayashi Mishima-gun, Osaka Prefecture 2-1 Hyakusan, Shimamoto-cho, Sekisui Chemical Co., Ltd. (72) Inventor Shigeru Dangami Hyakuyama, Shimamoto-cho, Mishima-gun, Osaka 2-1 Hyakuyama, Sekisui Chemical Co., Ltd. (72) Yasuhiko Oyama, Shimamoto-cho, Mishima-gun, Osaka Hyakusan 2-1 Sekisui Chemical Co., Ltd. (72) Inventor Kazuhiro Shimomura Hyakusan, Shimamoto-cho, Mishima-gun, Osaka 2-1 Sekisui Chemical Co., Ltd. (72) Go Hasegawa Hyakuyama, Shimamoto-cho, Mishima-gun, Osaka 2-1 Sekisui Chemical Co., Ltd. F-term (reference) 2H092 JA24 KA05 KB21 MA14 MA15 MA16 MA18 MA19 MA20 MA31 MA35 MA37 NA18 NA25 NA29 NA30 4J040 DF041 DF051 FA141 HB18 HB41 HC14 HC15 KA12 KA13 KA37 NA19 PA42 5C094 AA43 BA03 FA02 FB05 FB06 FB20 GB10 HA08 5F110 AA30 DD01 DD12 DD13 DD17 DD30 QQ16 5G435 AA17 CC09 HH20 KK05 LL06 LL07 LL08

Claims (5)

[Claims] 1. A temporary transfer substrate used when transferring a TFT circuit formed on a primary substrate to a secondary substrate, which is a base material and is provided on the base material, and generates gas by stimulation. And a thermoplastic pressure-sensitive adhesive layer which has a pressure-sensitive adhesive force which is reduced by stimulation. 2. A temporary transfer substrate used when transferring a TFT circuit formed on a primary substrate to a secondary substrate, which is a substrate and a gas provided on the substrate and stimulated by light. And a thermoplastic pressure-sensitive adhesive layer containing a gas generating agent that generates a gas, and having a pressure-sensitive adhesive force reduced by stimulation with light. 3. A temporary transfer substrate used when transferring a TFT circuit formed on a primary substrate to a secondary substrate, which is a base material and a gas provided on the base material and stimulated by heat. And a thermoplastic pressure-sensitive adhesive layer containing a gas generating agent that generates a gas, and having a pressure-sensitive adhesive force reduced by stimulation with heat. 4. The temporary transfer substrate according to claim 1, 2 or 3, wherein the pressure-sensitive adhesive layer contains a gas generating agent that generates a gas only by stimulation on the surface layer portion. 5. A method of manufacturing a TFT circuit substrate using the temporary transfer substrate according to claim 1, 2, 3 or 4, wherein at least a step of preparing the temporary transfer substrate and a TFT on a primary substrate. TFTs are formed on the primary substrate by a process of forming a circuit to produce a circuit board and hot pressing or thermal lamination.
A step of pasting the temporary transfer substrate on the TFT circuit of the circuit substrate on which the circuit is formed, and a step of peeling the primary substrate from the circuit substrate on which the TFT circuit is formed on the primary substrate on which the temporary transfer substrate is pasted And a step of adhering the secondary substrate to the TFT circuit to which the temporary transfer substrate from which the primary substrate has been peeled is adhered, and a temporary operation of the TFT circuit to which the temporary transfer substrate to which the secondary substrate has been adhered are adhered. A step of stimulating the pressure-sensitive adhesive layer on the transfer substrate so as to reduce the adhesive force to the TFT circuit as compared to before the stimulus is applied, and after reducing the adhesive force of the pressure-sensitive adhesive layer, the secondary substrate is Glued TFT
And a step of peeling the temporary transfer substrate from the circuit.