CN114097073A - Method for manufacturing semiconductor device and laminate for semiconductor processing - Google Patents

Method for manufacturing semiconductor device and laminate for semiconductor processing Download PDF

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Publication number
CN114097073A
CN114097073A CN202080048374.4A CN202080048374A CN114097073A CN 114097073 A CN114097073 A CN 114097073A CN 202080048374 A CN202080048374 A CN 202080048374A CN 114097073 A CN114097073 A CN 114097073A
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adhesive tape
semiconductor processing
semiconductor
temperature
tape
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今智范
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Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/062—Copolymers with monomers not covered by C09J133/06
    • C09J133/066—Copolymers with monomers not covered by C09J133/06 containing -OH groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Toxicology (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)

Abstract

The invention aims to provide a method for manufacturing a semiconductor device and a laminated body for semiconductor processing, which can restrain the peeling of a temporary fixing belt and an adhesive tape for semiconductor processing at the interface and can well pick up a semiconductor package. The method for manufacturing a semiconductor device of the present invention comprises the following step (3): in a semiconductor processing laminate in which a semiconductor package to which an adhesive tape for semiconductor processing is attached is laminated on a temporary fixing tape so that the adhesive tape side for semiconductor processing is in contact with the temporary fixing tape and metal films are formed on the back surface and the side surface of the semiconductor package to which the adhesive tape for semiconductor processing is attached, the semiconductor package is picked up from the adhesive tape for semiconductor processingIn the step (3), the semiconductor package is heated to a temperature T satisfying the following formula (1)1The semiconductor package having the metal films formed on the back surface and the side surfaces is picked up in this state. 100 < { Fb (T)1)/Fa(T1) In the formula (1), Fa (T) represents the peeling force of the adhesive tape for semiconductor processing to the copper plate at the temperature T, Fa (T)1) Temperature T ═ T for Fa (T)1Fb (T) represents the peeling force of the temporary fixing tape to the adhesive tape for semiconductor processing at the temperature T, Fb (T)1) Temperature T ═ T for Fb (T)1The value of time.

Description

Method for manufacturing semiconductor device and laminate for semiconductor processing
Technical Field
The present invention relates to a method for manufacturing a semiconductor device and a laminate for semiconductor processing, which can suppress peeling at the interface between a temporary fixing tape and a semiconductor processing adhesive tape and can satisfactorily pick up a semiconductor package.
Background
In the processing of electronic components such as semiconductors, in order to facilitate handling of the electronic components and prevent breakage thereof, the electronic components are fixed to a support plate via an adhesive composition or an adhesive tape is attached to the electronic components for protection. For example, when a thick film wafer cut out from high-purity single crystal silicon or the like is ground to a predetermined thickness to form a thin film wafer, the thick film wafer is bonded to the support plate via the adhesive composition.
In addition, when a large-area semiconductor package is diced to obtain a plurality of singulated semiconductor packages, an operation of attaching an adhesive tape to the semiconductor package is also performed. In such a process, the semiconductor package to which the adhesive tape is attached is temporarily fixed to an adhesive tape called a dicing tape, and the semiconductor package is diced on the dicing tape together with the adhesive tape. After dicing, the singulated semiconductor packages are peeled off from the dicing tape and/or the adhesive tape by needle picking or the like.
The adhesive composition and the adhesive tape used for the electronic component are required to have high adhesiveness to fix the electronic component as firmly as possible in the processing step and to be peelable without damaging the electronic component after the completion of the processing step (hereinafter, also referred to as "high adhesiveness and easy peelability").
As a means for achieving high adhesion and easy peeling, for example, patent document 1 discloses an adhesive sheet using an adhesive in which a polyfunctional monomer or oligomer having a radiation polymerizable functional group is bonded to a side chain or a main chain of a polymer. By having a radiation-polymerizable functional group, the polymer is cured by irradiation with ultraviolet rays, and by utilizing this, the adhesive force is reduced by irradiation with ultraviolet rays at the time of peeling, and peeling can be performed without adhesive residue.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 5-32946
Disclosure of Invention
Problems to be solved by the invention
On the other hand, communication devices such as mobile phones are becoming higher in frequency, and there is a problem that malfunction of a semiconductor package occurs due to noise caused by high frequency. In particular, in recent communication equipment, the semiconductor package is susceptible to noise caused by high frequencies because of the increase in device density and the progress in lowering the voltage of the device due to miniaturization.
In order to solve this problem, for example, the back surface and side surfaces of the singulated semiconductor package after dicing are subjected to a shielding treatment with a metal film by sputtering or the like, and a high frequency is blocked. In such a shielding process, an operation of attaching an adhesive tape to the circuit surface (front surface) of the semiconductor package is also performed in order to protect the circuit surface (front surface) and prevent contamination. That is, the semiconductor package having the adhesive tape attached to the circuit surface (front surface) is temporarily fixed to a temporary fixing tape, and a metal film is formed on the rear surface and the side surface of the semiconductor package on the temporary fixing tape.
After the masking treatment, the semiconductor package having the metal films formed on the back surface and the side surfaces is peeled off from the temporary fixing tape and the adhesive tape by needle pickup or the like. However, depending on the height, shape, and the like of the electrode on the circuit surface (front surface) of the semiconductor package, the semiconductor package may not be picked up satisfactorily after the shielding process.
The invention aims to provide a method for manufacturing a semiconductor device and a laminated body for semiconductor processing, which can restrain the peeling of a temporary fixing belt and an adhesive tape for semiconductor processing at the interface and can well pick up a semiconductor package.
Means for solving the problems
The present invention is a method for manufacturing a semiconductor device, comprising the following step (3): in a semiconductor processing laminate in which a semiconductor package to which an adhesive tape for semiconductor processing is attached is laminated on a temporary fixing tape so that the adhesive tape side for semiconductor processing is in contact with the temporary fixing tape and metal films are formed on the back surface and the side surfaces of the semiconductor package to which the adhesive tape for semiconductor processing is attached, the semiconductor package having the metal films formed on the back surface and the side surfaces is picked up from the adhesive tape for semiconductor processing, and in the step (3), the semiconductor package is heated to a temperature T satisfying the following formula (1)1The semiconductor package having the metal films formed on the back surface and the side surfaces is picked up in this state.
100＜{Fb(T1)/Fa(T1)} (1)
In the formula (1), Fa (T) represents the peeling force of the adhesive tape for semiconductor processing to the copper plate at the temperature T, Fa (T)1) Temperature T ═ T for Fa (T)1Fb (T) represents the peeling force of the temporary fixing tape to the adhesive tape for semiconductor processing at the temperature T, Fb (T)1) Temperature T ═ T for Fb (T)1The value of time.
The present invention is described in detail below.
In the pick-up of the semiconductor package after the masking treatment, peeling occurs not at the interface between the semiconductor package and the adhesive tape (semiconductor processing adhesive tape) but at the interface between the temporary fixing tape and the semiconductor processing adhesive tape, thereby causing a pick-up failure. In view of such problems, the present inventors have focused on "the adhesion of the adhesive tape for semiconductor processing to an adherend (referred to as a standard copper plate)" and "the adhesion of the temporary fixing tape to the adhesive tape for semiconductor processing". The present inventors have found that by picking up a semiconductor package in a state heated to a temperature at which the ratio of these adhesive forces satisfies a specific range, peeling at the interface between the temporary fixing tape and the adhesive tape for semiconductor processing can be suppressed, and the semiconductor package can be picked up satisfactorily, and have completed the present invention.
In the method for manufacturing a semiconductor device of the present invention, step (3) of picking up a semiconductor package in which a metal film is formed on the back surface and the side surface of a specific semiconductor processing laminate from an adhesive tape for semiconductor processing is performed.
Here, the specific semiconductor processing laminate is a semiconductor processing laminate in which a semiconductor package to which a semiconductor processing adhesive tape is attached is laminated on a temporary fixing tape so that the semiconductor processing adhesive tape side is in contact with the semiconductor processing adhesive tape, and metal films are formed on the back surface and the side surfaces of the semiconductor package to which the semiconductor processing adhesive tape is attached. The method for obtaining such a laminate for semiconductor processing is not particularly limited, and a method for obtaining a laminate for semiconductor processing by performing the following steps (1) and (2) before the above step (3) is preferable. That is, in the method for manufacturing a semiconductor device of the present invention, it is preferable to perform the step (1) of temporarily fixing the semiconductor package to which the adhesive tape for semiconductor processing is attached to the temporary fixing tape so that the adhesive tape for semiconductor processing is brought into contact with the temporary fixing tape.
The adhesive tape for semiconductor processing may be a supporting type having a base material and an adhesive layer laminated on at least one surface of the base material, or may be a non-supporting type having no base material and having an adhesive layer. Among them, from the viewpoint of easy adjustment of fb (t)/fa (t) described later and more favorable pickup of the semiconductor package, a single-side supporting type having a base material and an adhesive layer laminated on one surface of the base material is preferable. In the case where the adhesive tape for semiconductor processing is of a single-side supporting type, the base material side of the adhesive tape for semiconductor processing is in contact with the adhesive surface of the temporary securing tape.
The material of the base material of the adhesive tape for semiconductor processing is not particularly limited, and a heat-resistant material is preferable.
Examples of the material of the base material of the pressure-sensitive adhesive tape for semiconductor processing include polyethylene terephthalate, polyethylene naphthalate, polyacetal, polyamide, polycarbonate, polyphenylene ether, polybutylene terephthalate, ultra-high molecular weight polyethylene, syndiotactic polystyrene, polyarylate, polysulfone, polyethersulfone, polyphenylene sulfide, polyether ether ketone, polyimide, polyetherimide, fluororesin, liquid crystal polymer, and the like. Among them, polyethylene terephthalate and polyethylene naphthalate are preferable from the viewpoint of excellent heat resistance.
The substrate of the adhesive tape for semiconductor processing preferably has an easy-adhesion layer on the surface opposite to the adhesive layer.
The easy-adhesion layer is formed on the surface of the adhesive tape base material opposite to the adhesive layer, i.e., the back surface. By providing the easy-adhesion layer on the base material of the adhesive tape for semiconductor processing, it is possible to easily adjust fb (t)/fa (t) described later, and to more favorably pick up a semiconductor package.
Examples of the easy adhesion layer include a SiOx layer, a metal oxide layer, an organic metal compound layer, a silicone compound layer, a polymerizable polymer layer, a corona-treated layer, and a plasma-treated layer. Among them, an organic metal compound layer and a corona treatment layer are preferable in terms of higher adhesion facilitating effect.
Examples of the method of the easy adhesion treatment using an organic compound or an inorganic compound (that is, the method of forming the SiOx layer, the metal oxide layer, the organic metal compound layer, the silicone compound layer, the polymerizable polymer layer, and the like) include vapor deposition, coating, and the like.
Examples of the method for forming the corona-treated layer include: a method of performing corona treatment on the back surface of the base material by reciprocating the film once under conditions of an output of 0.24Kw, a speed of 40mm/min and an electrode distance of 1mm using a high-frequency power supply (AGI-020 manufactured by spring Motor Co., Ltd.).
The substrate of the adhesive tape for semiconductor processing preferably has a bending rigidity per unit width in the TD direction at 23 ℃ of 2.38 × 10-7N·m21.50X 10,/m or more-4N·m2And/m is less than or equal to. By setting the bending rigidity per unit width in the TD direction at 23 ℃ to the above range, an adhesive tape for semiconductor processing that can protect an adherend more reliably and has excellent handling properties can be produced. At the above-mentioned temperature of 23 DEG CThe bending rigidity per unit width in the TD direction is more preferably 4.12X 10-7N·m2More preferably 9.76X 10,/m or more-7N·m2More preferably 8.5X 10,/m or more-5N·m2A value of 1.0X 10 or less, more preferably-5N·m2And/m is less than or equal to.
Here, the td (transverse direction) direction means a direction perpendicular to the extrusion direction when the base material is extrusion-processed into a sheet shape. The flexural rigidity per unit width is represented by the product of the tensile elastic modulus E and the second moment of area (japanese text: second order of area モ - メント) I divided by the length of the width of the base material. The tensile elastic modulus E can be measured, for example, by a viscoelastometer (e.g., DVA-200, manufactured by IT measurement and control Co., Ltd.) under the conditions of a constant temperature-rise tensile mode, a temperature rise rate of 10 ℃/min, and a frequency of 10 Hz. The sectional moment of inertia I of the base material (rectangular in section) is represented by the following formula (3).
I ═ length of width of substrate (m)) × (thickness of substrate (m))3/12 (unit m)4) (3)
The storage modulus of the base material of the adhesive tape for semiconductor processing is not particularly limited, but is preferably 5.0 × 107Pa or more and 1.0X 1011Pa or less. By setting the storage modulus of the base material of the adhesive tape for semiconductor processing to be within the above range, the base material is easily bent to a proper degree, and therefore, the peeling of the semiconductor package when the semiconductor package is cut together with the adhesive tape for semiconductor processing can be further suppressed, and the semiconductor package can be picked up more favorably. The storage modulus of the base material of the adhesive tape for semiconductor processing is more preferably 8.0 × 108Pa or more, more preferably 1.0X 109Pa or more, more preferably 5.0X 1010Pa or less, more preferably 5.0X 109Pa or less.
Examples of the method for measuring the storage modulus of the base material of the adhesive tape for semiconductor processing include dynamic viscoelasticity measurement, tensile test, and the like. More specifically, a test piece having a long length of 10mm in width was prepared. The obtained test piece was subjected to a tensile test at a test speed of 300mm/min at a temperature of 23 ℃ AND a humidity of 50% using a tensile tester (for example, RTG1250A, manufactured by AND Co., Ltd.), AND the tensile storage elastic modulus was determined in accordance with JIS K7161-1.
The ultraviolet transmittance of the base material of the adhesive tape for semiconductor processing is not particularly limited, and when the adhesive layer of the adhesive tape for semiconductor processing is a photocurable adhesive layer, the ultraviolet transmittance at 405nm is preferably 1% or more. The ultraviolet transmittance at 405nm is more preferably 10% or more, still more preferably 15% or more, and particularly preferably 50% or more. When the ultraviolet transmittance at 405nm is not less than the lower limit, the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing can be sufficiently cured without using a photosensitizer in the case where the pressure-sensitive adhesive layer is a photocurable pressure-sensitive adhesive layer. The upper limit of the above-mentioned ultraviolet transmittance at 405nm is not particularly limited, and the higher the ultraviolet transmittance, the better, usually 100% or less.
The thickness of the substrate of the adhesive tape for semiconductor processing is not particularly limited, but the lower limit is preferably 5 μm and the upper limit is preferably 200 μm. By setting the thickness of the base material of the adhesive tape for semiconductor processing to be within the above range, an adhesive tape for semiconductor processing having appropriate hardness and excellent handling properties can be obtained. A more preferable lower limit of the thickness of the base material of the adhesive tape for semiconductor processing is 10 μm, and a more preferable upper limit is 150 μm.
The pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing is not particularly limited, and may be either a non-curable pressure-sensitive adhesive or a curable pressure-sensitive adhesive. Specific examples thereof include rubber-based adhesives, acrylic-based adhesives, vinyl alkyl ether-based adhesives, silicone-based adhesives, polyester-based adhesives, polyamide-based adhesives, urethane-based adhesives, and styrene-diene block copolymer-based adhesives. Among these, acrylic adhesives are preferable, and acrylic curable adhesives are more preferable, because of excellent heat resistance and easy adjustment of adhesive force.
Examples of the curable adhesive include a photocurable adhesive which is crosslinked and cured by light irradiation, and a thermosetting adhesive which is crosslinked and cured by heating. Among them, a photocurable pressure-sensitive adhesive is preferred in that the adherend is not easily damaged and the pressure-sensitive adhesive is easily cured. That is, the pressure-sensitive adhesive layer may be a photocurable pressure-sensitive adhesive layer, a thermosetting pressure-sensitive adhesive layer, or the like, and is preferably a photocurable pressure-sensitive adhesive layer.
Examples of the photocurable adhesive include adhesives containing a polymerizable polymer as a main component and a photopolymerization initiator. Examples of the thermosetting adhesive include adhesives containing a polymerizable polymer as a main component and a thermal polymerization initiator.
The polymerizable polymer can be obtained, for example, by synthesizing a (meth) acrylic polymer having a functional group in the molecule (hereinafter referred to as a functional group-containing (meth) acrylic polymer) in advance, and reacting a compound having a functional group reactive with the functional group and a radically polymerizable unsaturated bond in the molecule (hereinafter referred to as a functional group-containing unsaturated compound).
The functional group-containing (meth) acrylic polymer can be obtained, for example, by copolymerizing an alkyl acrylate and/or alkyl methacrylate in which the number of carbon atoms of the alkyl group is usually in the range of 2 to 18, a functional group-containing monomer, and if necessary, another modifying monomer copolymerizable with these monomers.
The weight average molecular weight of the functional group-containing (meth) acrylic polymer is not particularly limited, and is usually about 20 to 200 ten thousand.
The weight average molecular weight can be determined by gel permeation chromatography. More specifically, for example, a diluted solution obtained by adjusting the obtained polymer to 0.2% by weight with Tetrahydrofuran (THF) is filtered through a filter (material: polytetrafluoroethylene, pore diameter: 0.2 μm). The obtained filtrate was supplied to a gel permeation chromatograph (2690 Separations Model, manufactured by Waters corporation, or the equivalent), GPC measurement was performed under conditions of a sample flow rate of 1mL/min and a column temperature of 40 ℃, and a polystyrene-equivalent molecular weight was measured to obtain a weight average molecular weight (Mw). As the column, GPC KF-806L (manufactured by SHOWA DENKO K.K., or its equivalent) was used, and as the detector, a differential refractometer was used.
Examples of the functional group-containing monomer include carboxyl group-containing monomers such as acrylic acid and methacrylic acid, hydroxyl group-containing monomers such as hydroxyethyl acrylate and hydroxyethyl methacrylate, and epoxy group-containing monomers such as glycidyl acrylate and glycidyl methacrylate. Examples of the functional group-containing monomer include isocyanate group-containing monomers such as isocyanatoethyl acrylate and isocyanatoethyl methacrylate, and amino group-containing monomers such as aminoethyl acrylate and aminoethyl methacrylate.
Examples of the other copolymerizable modifying monomer include various monomers used in general (meth) acrylic polymers such as vinyl acetate, acrylonitrile, and styrene.
As the functional group-containing unsaturated compound to be reacted with the functional group-containing (meth) acrylic polymer, the same compounds as the functional group-containing monomer can be used according to the functional group of the functional group-containing (meth) acrylic polymer. For example, when the functional group of the functional group-containing (meth) acrylic polymer is a carboxyl group, an epoxy group-containing monomer or an isocyanate group-containing monomer can be used. When the functional group of the functional group-containing (meth) acrylic polymer is a hydroxyl group, an isocyanate group-containing monomer can be used. When the functional group of the functional group-containing (meth) acrylic polymer is an epoxy group, a carboxyl group-containing monomer or an amide group-containing monomer such as acrylamide may be used. When the functional group of the functional group-containing (meth) acrylic polymer is an amino group, an epoxy group-containing monomer can be used.
In order to obtain the functional group-containing (meth) acrylic polymer, the raw material monomers may be subjected to a radical reaction in the presence of a polymerization initiator. As a method for radically reacting the raw material monomer, that is, a polymerization method, conventionally known methods can be used, and examples thereof include solution polymerization (boiling point polymerization or constant temperature polymerization), emulsion polymerization, suspension polymerization, and bulk polymerization.
The polymerization initiator used in the radical reaction for obtaining the functional group-containing (meth) acrylic polymer is not particularly limited, and examples thereof include organic peroxides and azo compounds. Examples of the organic peroxide include 1, 1-bis (t-hexylperoxy) -3, 3, 5-trimethylcyclohexane, t-hexylperoxypivalate, t-butylperoxypivalate, 2, 5-dimethyl-2, 5-bis (2-ethylhexanoylperoxy) hexane, t-hexylperoxy-2-ethylhexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxyisobutyrate, t-butylperoxy-3, 5, 5-trimethylhexanoate, t-butylperoxylaurate and the like. Examples of the azo compound include azobisisobutyronitrile and azobiscyclohexanecarbonitrile. These polymerization initiators may be used alone, or 2 or more kinds thereof may be used in combination.
The photocurable pressure-sensitive adhesive layer preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include those activated by irradiation with light having a wavelength of 250 to 800 nm. Examples of such photopolymerization initiators include acetophenone derivative compounds such as methoxyacetophenone, benzoin ether-based compounds such as benzoin propyl ether and benzoin isobutyl ether, ketal derivative compounds such as benzildimethylketal and acetophenone diethylketal, and phosphine oxide derivative compounds. Further, bis (. eta.5-cyclopentadienyl) titanocene derivative compounds, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, α -hydroxycyclohexylphenyl ketone, 2-hydroxymethylphenylpropane and the like can be mentioned. These photopolymerization initiators may be used alone, or 2 or more of them may be used in combination.
The thermosetting adhesive layer preferably contains a thermal polymerization initiator. The thermal polymerization initiator may be a thermal polymerization initiator which decomposes by heat to generate an active radical which initiates polymerization and curing. Specific examples thereof include dicumyl peroxide, di-t-butyl peroxide, t-butyl peroxybenzoate, t-butyl hydroperoxide, benzoyl peroxide, cumene hydroperoxide, dicumyl hydroperoxide, p-menthane hydroperoxide, and di-t-butyl peroxide.
The commercial products of the thermal polymerization initiator are not particularly limited, and examples thereof include Perbutyl D, Perbutyl H, Perbutyl P, パ - ペンタ H (all of which are manufactured by Nichira oil Co., Ltd.). These thermal polymerization initiators may be used alone, or 2 or more of them may be used in combination.
The pressure-sensitive adhesive layer may further contain a radical polymerizable polyfunctional oligomer or monomer. The adhesive layer has improved photocurability and thermosetting properties by containing a radically polymerizable polyfunctional oligomer or monomer.
The polyfunctional oligomer or monomer is not particularly limited, and preferably has a weight average molecular weight of 1 ten thousand or less. In order to efficiently form a three-dimensional network in the pressure-sensitive adhesive layer by light irradiation or heating, the polyfunctional oligomer or monomer preferably has a weight average molecular weight of 5000 or less and the number of unsaturated bonds having radical polymerizability in the molecule is 2 to 20.
Examples of the polyfunctional oligomer or monomer include trimethylolpropane triacrylate, tetrahydroxymethylmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, and methacrylates thereof. Examples of the polyfunctional oligomer or monomer include 1, 4-butanediol diacrylate, 1, 6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylates, and methacrylates thereof. These polyfunctional oligomers or monomers may be used alone, or 2 or more kinds may be used in combination.
The adhesive layer may further contain an inorganic filler such as fumed silica. By containing the inorganic filler, the cohesive force of the pressure-sensitive adhesive layer is improved, and the releasability of the pressure-sensitive adhesive tape for semiconductor processing is improved, whereby the semiconductor package can be picked up more favorably.
The pressure-sensitive adhesive layer preferably contains a crosslinking agent. By containing the crosslinking agent, the cohesive force of the pressure-sensitive adhesive layer is improved, and the releasability of the pressure-sensitive adhesive tape for semiconductor processing is improved, whereby the semiconductor package can be picked up more favorably.
The crosslinking agent is not particularly limited, and examples thereof include an isocyanate-based crosslinking agent, an epoxy-based crosslinking agent, an aziridine-based crosslinking agent, and a metal chelate-based crosslinking agent. Among these, isocyanate-based crosslinking agents are preferable in terms of further improving the adhesive strength.
The content of the crosslinking agent is preferably 0.1 part by weight or more and 20 parts by weight or less with respect to 100 parts by weight of the adhesive constituting the adhesive layer. When the content of the crosslinking agent is within the above range, the adhesive can be appropriately crosslinked to improve the adhesive strength. From the viewpoint of further improving the adhesive force, the content of the crosslinking agent has a more preferable lower limit of 0.5 parts by weight, a more preferable upper limit of 15 parts by weight, a more preferable lower limit of 1.0 part by weight, and a more preferable upper limit of 10 parts by weight.
The pressure-sensitive adhesive layer may contain known additives such as a plasticizer, a resin, a surfactant, a wax, and a fine particle filler. These additives may be used alone, or 2 or more of them may be used in combination.
The storage modulus of the adhesive layer at 23 ℃ is preferably 8.5X 105Pa or more and 1.7X 109Pa or less. When the storage modulus of the pressure-sensitive adhesive layer at 23 ℃ is in the above range, the pressure-sensitive adhesive layer can be attached to an adherend with sufficient adhesive force, and the adherend can be sufficiently fixed. In addition, since the releasability of the adhesive tape for semiconductor processing is improved, the semiconductor package can be picked up more favorably. The storage modulus of the pressure-sensitive adhesive layer at 23 ℃ is more preferably 1.7 × 10 from the viewpoint of improving the adhesive strength and the peelability6Pa or more, more preferably 8.5X 106Pa or more, more preferably 1.7X 108Pa or less, more preferably 8.5X 107Pa or less.
In the case where the adhesive is a curable adhesive, the energy storage mold of the adhesive layerThe amount refers to the storage modulus after curing. In the case of the heat-curable adhesive, after heating at 120 ℃ for 1 hour and then at 175 ℃ for 1 hour, the cured adhesive was cured, and in the case of the photocurable adhesive, an ultra-high pressure mercury ultraviolet irradiator was used to adjust the cumulative intensity to 2500mJ/cm2The pressure-sensitive adhesive layer is irradiated with 405nm ultraviolet light from the substrate side and then cured.
Examples of a method for measuring the storage modulus of the pressure-sensitive adhesive layer at 23 ℃ include a method such as dynamic viscoelasticity measurement. More specifically, the measurement can be performed under the conditions of a constant temperature-rise stretching mode, a temperature-rise rate of 10 ℃/min, and a frequency of 10Hz by using a viscoelastic spectrometer (for example, DVA-200, manufactured by IT measurement and control Co., Ltd.).
The thickness of the pressure-sensitive adhesive layer is not particularly limited, and the lower limit is preferably 5 μm and the upper limit is preferably 500. mu.m. When the thickness of the pressure-sensitive adhesive layer is within the above range, the pressure-sensitive adhesive layer can be attached to an adherend with sufficient adhesive force, and the adherend can be sufficiently fixed. From the viewpoint of improving the adhesive strength, a more preferable lower limit of the thickness of the pressure-sensitive adhesive layer is 10 μm, a more preferable upper limit is 300 μm, a further preferable lower limit is 15 μm, a further preferable upper limit is 250 μm, and a further more preferable upper limit is 200 μm.
The method for obtaining a semiconductor package to which the adhesive tape for semiconductor processing is attached is not particularly limited, and a method for obtaining a semiconductor package to which the adhesive tape for semiconductor processing is attached by performing the following steps (1-1) and (1-2) before the step (1) is preferable.
That is, it is preferable to perform the step (1-1) and the step (1-2) before the step (1), and the step (1-1): attaching an adhesive tape for semiconductor processing to a circuit surface of a semiconductor package, wherein the step (1-2): the semiconductor package to which the adhesive tape for semiconductor processing is attached is diced to obtain singulated semiconductor packages to which the adhesive tape for semiconductor processing is attached.
The method for attaching the adhesive tape for semiconductor processing is not particularly limited, and examples thereof include a method using a laminator and the like.
In the case where the pressure-sensitive adhesive layer of the adhesive tape for semiconductor processing is a photocurable pressure-sensitive adhesive layer, it is preferable to perform the step (1-3) of irradiating the pressure-sensitive adhesive layer of the adhesive tape for semiconductor processing with light after the step (1-1).
Examples of the method of irradiating the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing with light include irradiation with an ultra-high pressure mercury ultraviolet irradiator so that the cumulative intensity is 2500mJ/cm2The method (4) is a method of irradiating an adhesive layer with ultraviolet rays of 405nm from the substrate side. The irradiation intensity in this case is not particularly limited, but is preferably 50 to 100mW/cm2。
The method of the cleavage is not particularly limited, and examples thereof include the following methods: the semiconductor package to which the adhesive tape for semiconductor processing is attached is temporarily fixed to a dicing tape, the dicing tape is attached to a dicing frame, and after singulation using a dicing apparatus, the dicing tape is peeled off. The cutting device is not particularly limited, and for example, DFD6361 manufactured by DISCO corporation, etc. can be used.
In the step (1), the semiconductor package with the adhesive tape for semiconductor processing thus obtained is temporarily fixed to a temporary fixing tape so that the adhesive tape for semiconductor processing is brought into contact with the temporary fixing tape.
The temporary fixing tape is not particularly limited, and a method for manufacturing a semiconductor device, particularly an adhesive tape for temporary fixing generally used in dicing or masking, may be used.
The adhesion of the temporary fixing tape to a copper plate (a copper plate satisfying JIS H3100: 2018, for example, C1100P, manufactured by Engineering Test Service) has a preferable lower limit of 1.0N/inch and a preferable upper limit of 35N/inch. By setting the adhesion of the temporary fixing tape to the copper plate within the above range, fb (t)/fa (t) described later can be easily adjusted, and the semiconductor package can be picked up more favorably. Further, if the adhesion to the copper plate is not less than the lower limit, the peeling at the interface between the temporary fixing tape and the adhesive tape for semiconductor processing can be further suppressed. If the adhesion to the copper plate is not more than the upper limit, the handling property of the temporary fixing tape is improved. A more preferable lower limit of the adhesion of the temporary fixing tape to the copper plate is 4N/inch, and a more preferable upper limit is 15N/inch.
As a method of measuring the adhesion of the temporary fixing tape to the copper plate, for example, the following method can be mentioned. First, the temporary fixing tape is placed on a copper plate (a copper plate satisfying JIS H3100: 2018, for example, C1100P, manufactured by Engineering Test Service) so that an adhesive layer faces the copper plate. The temporary fixing tape was attached to the copper plate by reciprocating a 2kg rubber roller once at a speed of 300 mm/min. Then, the mixture was allowed to stand at 23 ℃ for 1 hour to prepare a test sample. The temporary fixing tape was peeled off from the test sample after standing in accordance with JIS Z0237 at a tensile speed of 300mm/min in a direction of 180 ° under an environment of a temperature of 23 ℃ and a relative humidity of 50% by using Autograph (manufactured by shimadzu corporation), and the peel force was measured.
The temporary fixing tape preferably includes a base material and an adhesive layer laminated on one surface of the base material.
The adhesive layer of the temporary fixing tape is not particularly limited, and is preferably a silicone adhesive layer. By having the silicone adhesive layer, the heat resistance of the temporary fixing tape is improved. The silicone compound constituting the silicone pressure-sensitive adhesive layer is not particularly limited, and examples thereof include polysiloxane, addition-curable silicone, peroxide-curable silicone, and the like.
The thickness of the adhesive layer of the temporary fixing tape is not particularly limited, and the lower limit is preferably 5 μm and the upper limit is preferably 500 μm. When the thickness of the pressure-sensitive adhesive layer of the temporary fixing tape is within the above range, the tape can be attached to an adherend with sufficient adhesive force, and the adherend can be sufficiently fixed. From the viewpoint of improving the adhesive strength, a more preferable lower limit of the thickness of the adhesive layer of the temporary fixing tape is 10 μm, a more preferable upper limit is 300 μm, a further more preferable lower limit is 15 μm, a further more preferable upper limit is 250 μm, and a further more preferable upper limit is 200 μm.
The material of the base material of the temporary fixing tape is not particularly limited, and is preferably a heat-resistant material.
Examples of the material of the base material of the temporary fixing tape include polyethylene terephthalate, polyethylene naphthalate, polyacetal, polyamide, polycarbonate, polyphenylene ether, polybutylene terephthalate, ultra-high molecular weight polyethylene, syndiotactic polystyrene, polyarylate, polysulfone, polyethersulfone, polyphenylene sulfide, polyether ether ketone, polyimide, polyetherimide, fluororesin, liquid crystal polymer, and the like. Among them, polyimide, polyethylene terephthalate, and polyethylene naphthalate are preferable from the viewpoint of excellent heat resistance.
The thickness of the base material of the temporary fixing tape is not particularly limited, and the lower limit is preferably 5 μm and the upper limit is preferably 200 μm. By setting the thickness of the base material of the temporary fixing tape within the above range, a temporary fixing tape having an appropriate hardness and excellent handleability can be produced. A more preferable lower limit of the thickness of the base material of the above temporary fixing tape is 10 μm, and a more preferable upper limit is 150 μm.
The commercially available product of the temporary fixing tape is not particularly limited, and examples thereof include Kapton (registered trademark) pressure-sensitive adhesive tape 650R #50 (manufactured by Teraoka).
In the method for manufacturing a semiconductor device of the present invention, it is preferable that step (2) of forming a metal film on the temporary fixing tape on the back surface and the side surface of the semiconductor package to which the adhesive tape for semiconductor processing is attached is performed subsequently.
The method for forming the metal film is not particularly limited, and examples thereof include a method for forming a film made of stainless steel, titanium, aluminum, or the like by sputtering or the like.
By performing the step (1) and the step (2), a semiconductor package to which the adhesive tape for semiconductor processing is attached can be obtained in which the semiconductor package is stacked on a temporary fixing tape so that the adhesive tape side for semiconductor processing is in contact with the temporary fixing tape, and a metal film is formed on the back surface and the side surface of the semiconductor package to which the adhesive tape for semiconductor processing is attached.
In the method for manufacturing a semiconductor device of the present invention, the step (3) of picking up a semiconductor package in which a metal film is formed on the back surface and the side surface of the semiconductor processing laminate is performed from the adhesive tape for semiconductor processing. Thus, a semiconductor package having metal films formed on the back surface and the side surfaces can be obtained.
In the step (3), the mixture is heated to a temperature T satisfying the following formula (1)1The semiconductor package having the metal films formed on the back surface and the side surfaces is picked up in this state.
100＜{Fb(T1)/Fa(T1)} (1)
In the formula (1), Fa (T) represents the peeling force of the adhesive tape for semiconductor processing to the copper plate at the temperature T, Fa (T)1) Temperature T ═ T for Fa (T)1Fb (T) represents the peeling force of the temporary fixing tape to the adhesive tape for semiconductor processing at the temperature T, Fb (T)1) Temperature T ═ T for Fb (T)1The value of time.
In the case where the adhesive tape for semiconductor processing is of the single-side supporting type, fb (t) represents the peeling force of the temporarily fixed tape at the temperature t from the back surface of the base material of the adhesive tape for semiconductor processing.
Fa (t) is an index showing "the adhesion of the adhesive tape for semiconductor processing to an adherend (copper plate to be standardized) at temperature t". The above-mentioned fb (t) is an index showing "the adhesion of the temporary fixing tape to the adhesive tape for semiconductor processing at temperature t" (in the case where the adhesive tape for semiconductor processing is of a single-sided support type, the adhesion of the temporary fixing tape to the back surface of the base material of the adhesive tape for semiconductor processing at temperature t). These adhesive forces are all reduced by heating, but the degree of reduction is different, and fa (t) tends to be greatly reduced by heating as compared with fb (t). That is, Fb (t)/Fa (t) tends to increase with increasing t.
In the step (3), by picking up the semiconductor package in a state heated to the temperature at which the above range is satisfied, fa (t) can be significantly reduced as compared with fb (t). This suppresses peeling at the interface between the temporary fixing tape and the semiconductor processing adhesive tape, and enables good pickup of the semiconductor package.
The copper plate of the standard satisfies JIS H3100: 2018 (for example, C1100P, manufactured by Engineering Test Service).
In the step (3), the semiconductor package may be picked up while being heated to a temperature at which the above-mentioned fb (t)/fa (t) satisfies the above-mentioned range (i.e., exceeds 100), and preferably, the semiconductor package is picked up while being heated to a temperature at which the above-mentioned fb (t)/fa (t) becomes 103 or more. Further, it is more preferable to pick up the semiconductor package in a state heated to a temperature of not less than 150 f b (t)/fa (t). Further, it is preferable that the semiconductor package is picked up in a state heated to a temperature of not less than 200 f b (t)/fa (t). The upper limit of Fb (t)/Fa (t) is not particularly limited, but is, for example, 1500 as a substantial upper limit, and a more preferable upper limit is 750.
Fa (T) at temperature T1Value of time (Fa (T)1) Is not particularly limited, a preferred lower limit is 0.001N/inch, and a preferred upper limit is 0.5N/inch. By making Fa (T) above1) Within the above range, the semiconductor package can be picked up more favorably. Fa (T) described above1) A more preferable lower limit of (2) is 0.005N/inch, a further more preferable lower limit is 0.01N/inch, a further more preferable upper limit is 0.1N/inch, and a further more preferable upper limit is 0.07N/inch.
Fb (T) at a temperature T1Value of time (Fb (T)1) Is not particularly limited, a preferable lower limit is 1N/inch, a more preferable lower limit is 5N/inch, a still more preferable lower limit is 10N/inch, and a still more preferable lower limit is 15N/inch. By using the Fb (T) as described above1) When the lower limit is not less than the lower limit, the semiconductor package can be picked up more favorably. Fb (T) at a temperature T1Value of time (Fb (T)1) The upper limit of the above-mentioned molecular weight distribution is not particularly limited, but the upper limit is substantially 50N/inch, and the more preferable upper limit is 20N/inch.
The value of Fa (t) at 23 ℃ (Fa (23 ℃)) is not particularly limited, but the lower limit is preferably 0.04N/inch and the upper limit is preferably 1.5N/inch. By setting Fa (23 ℃) to be in the above range, Fb (t)/Fa (t) can be easily adjusted, and semiconductor packages can be picked up more favorably. A more preferable lower limit of Fa (23 ℃) is 0.1N/inch, and a more preferable upper limit is 1N/inch.
The value of Fb (t) at 23 ℃ (Fb (23 ℃)) is not particularly limited, but the lower limit is preferably 3N/inch and the upper limit is preferably 30N/inch. By setting Fb (23 ℃) to the above range, the adjustment of Fb (t)/Fa (t) is easy, and the semiconductor package can be picked up more favorably. A more preferable lower limit of Fb (23 ℃) is 5N/inch, and a more preferable upper limit is 7N/inch.
The above temperature T1The specific value of (b) is not particularly limited, and if considering a temperature generally used in picking up a semiconductor package, the lower limit is preferably 25 ℃, the upper limit is preferably 200 ℃, the lower limit is more preferably 50 ℃, and the upper limit is more preferably 150 ℃.
Heating to the above temperature T1The method for picking up the semiconductor package in the state of (1) is not particularly limited, and for example, a method of heating the semiconductor package to a temperature T while blowing warm air by using a die bonder1One-sided pick-up method, heating to temperature T1After the above is kept at the temperature T1The state of (1), and the like.
The measurement method of Fa (t) includes, for example, the following methods. First, the adhesive tape for semiconductor processing is prepared by mixing an adhesive layer with a resin composition satisfying JIS H3100: 2018 (for example, C1100P, manufactured by Engineering Test Service) are placed on the copper plates so as to face each other. The adhesive tape for semiconductor processing was attached to the copper plate by reciprocating a 2kg rubber roller once at a speed of 600 mm/min. The temperature of the back surface (substrate side) of the adhesive tape for semiconductor processing is measured by a temperature measuring sensor (e.g., A-231K-01-1-TC1-ANP manufactured by Anritimer corporation), and the laminate is heated. The adhesive tape for semiconductor processing, which was a laminate heated to a temperature t, was peeled in a direction of 180 ° at a tensile speed of 300mm/min under an environment of a temperature t and a humidity of 50% by using Autograph (manufactured by shimadzu corporation), and the peeling force was measured.
The copper plate as an adherend of the adhesive tape for semiconductor processing is a copper plate satisfying the following requirements in JIS H3100: 2018 (for example, C1100P, manufactured by Engineering Test Service) is selected on the basis of the circuit surface of the semiconductor package.
The measurement method of Fb (t) includes, for example, the following methods. First, the adhesive layer of the adhesive tape for semiconductor processing and the copper plate (C1100P) were opposed to each other and bonded to each other using a double-sided tape (double-sided tape 560 manufactured by water-collecting chemical company or the equivalent). The temporary fixing tape is placed on the adhesive tape for semiconductor processing so that the adhesive layer faces the back surface of the base material of the adhesive tape for semiconductor processing. The temporary fixing tape was attached to the adhesive tape for semiconductor processing by reciprocating a 2kg rubber roller once at a speed of 300 mm/min. The temperature of the back surface (substrate side) of the temporary fixing tape is measured by a temperature measuring sensor (e.g., a-231K-01-1-TC1-ANP manufactured by anlim corporation), and the laminate is heated. The temporarily attached tape of the laminate heated to the temperature t was peeled off in the 180 ° direction at a tensile speed of 300mm/min under an environment of a temperature t and a relative humidity of 50% by using Autograph (manufactured by shimadzu corporation), and the peeling force was measured.
The Fb (t)/Fa (t) can be calculated from the obtained Fa (t) and Fb (t).
In the case where the pressure-sensitive adhesive layer of the adhesive tape for semiconductor processing is a photocurable pressure-sensitive adhesive layer, fa (t) is measured after the pressure-sensitive adhesive layer of the adhesive tape for semiconductor processing is cured by irradiating light to the pressure-sensitive adhesive layer of the adhesive tape for semiconductor processing after the adhesive tape for semiconductor processing is attached to a copper plate and before the adhesive tape is heated to temperature t.
Examples of the method of irradiating the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing with light include irradiation with an ultra-high pressure mercury ultraviolet irradiator so that the cumulative intensity is 2500mJ/cm2The method (4) is a method of irradiating an adhesive layer with ultraviolet rays of 405nm from the substrate side. The irradiation intensity in this case is not particularly limited, but is preferably 50 to 100mW/cm2。
In order to adjust fb (t)/fa (t), the specific values of fa (t) and fb (t) may be adjusted.
Examples of the method for adjusting fa (t) include a method for adjusting the temperature t, and a method for adjusting the type, composition, physical properties, and the like of the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing as described above. As a method for adjusting fb (t) to the above range, in addition to the method for adjusting temperature t, there may be mentioned, for example, a method for adjusting the kind, composition, physical properties and the like of the base material of the adhesive tape for semiconductor processing as described above, and a method for forming the easy-adhesion layer as described above on the surface of the base material of the adhesive tape for semiconductor processing opposite to the adhesive layer, that is, on the back surface. Further, there is a method of adjusting the kind, composition, physical properties, and the like of the pressure-sensitive adhesive layer of the temporary fixing tape.
Fig. 1 is a diagram schematically showing an example of a method for manufacturing a semiconductor device according to the present invention. Hereinafter, a method for manufacturing a semiconductor device according to the present invention will be described with reference to fig. 1.
In fig. 1, the adhesive tape 2 for semiconductor processing is of a single-side supporting type having a base material 2b and an adhesive layer 2a laminated on one side of the base material 2b, but in the method for manufacturing a semiconductor device of the present invention, the adhesive tape 2 for semiconductor processing may be of an unsupported type having no base material 2 b.
In the method for manufacturing a semiconductor device of the present invention, first, as shown in fig. 1 (a), a step (1-1) of attaching an adhesive tape 2 for semiconductor processing to a circuit surface of a semiconductor package 4 may be performed.
When the pressure-sensitive adhesive layer of the adhesive tape for semiconductor processing is a photocurable pressure-sensitive adhesive layer, it is preferable to perform the step (1-3) (not shown) of irradiating light on the pressure-sensitive adhesive layer of the adhesive tape for semiconductor processing after the step (1-1).
In the method for manufacturing a semiconductor device of the present invention, as shown in fig. 1 (b), the step (1-2) of cutting the semiconductor package 4 to which the adhesive tape 2 for semiconductor processing is attached to obtain the singulated semiconductor package 4 to which the adhesive tape 2 for semiconductor processing is attached may be performed.
In the method for manufacturing a semiconductor device of the present invention, as shown in fig. 1 (c), a step (1) of temporarily fixing the semiconductor package 4 to which the adhesive tape 2 for semiconductor processing is attached to the temporary fixing tape 3 so that the adhesive tape 2 for semiconductor processing is brought into contact with the temporary fixing tape can be performed next.
In the method for manufacturing a semiconductor device of the present invention, as shown in fig. 1 (d), a step (2) of forming a metal film 5 on the temporary fixing tape 3 and on the back surface and the side surface of the semiconductor package 4 to which the adhesive tape 2 for semiconductor processing is attached may be performed.
By performing the steps shown in fig. 1 (a) to 1 (d), a semiconductor process laminate in which the semiconductor package 4 to which the adhesive tape 2 for semiconductor processing is attached is laminated on the temporary fixing tape 3 so that the adhesive tape 2 for semiconductor processing is in contact with the side, and the metal film 5 is formed on the back surface and the side surface of the semiconductor package 4 to which the adhesive tape 2 for semiconductor processing is attached can be obtained.
In the method for manufacturing a semiconductor device of the present invention, in the laminate for semiconductor processing, as shown in fig. 1 (e), a step (3) of picking up the semiconductor package 4 having the metal film 5 formed on the back surface and the side surface from the adhesive tape 2 for semiconductor processing is performed. Thus, a semiconductor package having metal films formed on the back surface and the side surfaces can be obtained.
In the step (3), the mixture is heated to a temperature T satisfying the following formula (1)1The semiconductor package having the metal films formed on the back surface and the side surfaces is picked up in this state.
100＜{Fb(T1)/Fa(T1)} (1)
In the formula (1), Fa (T) represents the peeling force of the adhesive tape for semiconductor processing to the copper plate at the temperature T, Fa (T)1) Temperature T ═ T for Fa (T)1Fb (T) represents the peeling force of the temporary fixing tape to the adhesive tape for semiconductor processing at the temperature T, Fb (T)1) Temperature T ═ T for Fb (T)1The value of time.
A semiconductor processing laminate which is an intermediate product of the method for manufacturing a semiconductor device of the present invention is also one aspect of the present invention.
The laminate for semiconductor processing of the present invention is a semiconductor package to which an adhesive tape for semiconductor processing is attached, the semiconductor package being in contact with the adhesive tape for semiconductor processing sideA laminate for semiconductor processing laminated on the temporary fixing tape and having a temperature T satisfying the following formula (1') in a temperature range of 25-200 DEG C2。
100＜{Fb(T2)/Fa(T2)} (1’)
In the formula (1'), Fa (T) represents the peeling force of the adhesive tape for semiconductor processing to the copper plate at the temperature T, Fa (T)2) Denotes Fa (T) at temperature T ═ T2Fb (T) represents the peeling force of the temporary fixing tape to the adhesive tape for semiconductor processing at the temperature T, Fb (T)2) Denotes Fb (T) at a temperature T ═ T2The value of time.
The above temperature T2The lower limit of the specific value of (b) is 25 ℃ and the upper limit is 200 ℃. With respect to the above temperature T2The specific value of (b) is preferably 50 ℃ in view of the temperature generally used for picking up the semiconductor package, and preferably 150 ℃ in view of the upper limit.
The laminate for semiconductor processing of the present invention may further have a metal film formed on the back surface and the side surface of the semiconductor package to which the adhesive tape for semiconductor processing is attached.
Effects of the invention
According to the present invention, it is possible to provide a method for manufacturing a semiconductor device and a laminate for semiconductor processing, which can suppress peeling at the interface between a temporary fixing tape and a semiconductor processing adhesive tape and can satisfactorily pick up a semiconductor package.
Drawings
Fig. 1 (a) to 1 (e) are views schematically showing an example of the method for manufacturing a semiconductor device according to the present invention.
Fig. 2 (a1) to 2 (a4) are views schematically showing steps of the method for manufacturing a semiconductor device in the example and the reference example.
Detailed Description
The mode of the present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples.
(example 1)
(1) Synthesis of adhesive Polymer
A reactor equipped with a thermometer, a stirrer, and a condenser was prepared. To the reactor, 93 parts by weight of 2-ethylhexyl acrylate as an alkyl (meth) acrylate, 1 part by weight of acrylic acid as a functional group-containing monomer, 6 parts by weight of hydroxyethyl methacrylate, 0.01 part by weight of dodecyl mercaptan and 80 parts by weight of ethyl acetate were charged, and then the reactor was heated to start reflux. Subsequently, 0.01 part by weight of 1, 1-bis (t-hexylperoxy) -3, 3, 5-trimethylcyclohexane as a polymerization initiator was added to the reactor, and polymerization was initiated under reflux. Then, 1-bis (t-hexylperoxy) -3, 3, 5-trimethylcyclohexane in an amount of 0.01 part by weight was added 1 hour and 2 hours after the start of the polymerization, and tert-hexylperoxypivalate in an amount of 0.05 part by weight was added 4 hours after the start of the polymerization, and the polymerization was continued. Then, 8 hours after the start of the polymerization, an ethyl acetate solution of a functional group-containing (meth) acrylic polymer having a solid content of 55% by weight and a weight average molecular weight of 60 ten thousand was obtained.
2-isocyanatoethyl methacrylate (2-isocyanatoethyl methacrylate) (3.5 parts by weight) was added to 100 parts by weight of the resin solids content of the obtained ethyl acetate solution containing a functional group-containing (meth) acrylic polymer and reacted to obtain an adhesive polymer.
(2) Production of adhesive tape for semiconductor processing
1 part by weight of a silicone compound, 3 parts by weight of an inorganic filler, 10 parts by weight of a urethane acrylate, 0.2 part by weight of a crosslinking agent, and 1 part by weight of a photopolymerization initiator were added to 100 parts by weight of a resin solid content of the ethyl acetate solution of the adhesive polymer obtained above, and mixed at a stirring speed of 100rpm to obtain an adhesive solution. Next, the pressure-sensitive adhesive solution was applied to the release-treated surface of the polyethylene terephthalate film whose surface was release-treated with a doctor blade so that the thickness after drying became 40 μm, and the film was heat-dried at 105 ℃ for 5 minutes to obtain a pressure-sensitive adhesive layer. The obtained pressure-sensitive adhesive layer was bonded to the corona-treated surface of the substrate a having one surface subjected to corona treatment, and the substrate a was aged at 40 ℃ for 6 days to obtain a pressure-sensitive adhesive tape for semiconductor processing.
The following materials were used for the base material a, silicone compound, inorganic filler, urethane acrylate, crosslinking agent, and photopolymerization initiator.
Substrate a (polyethylene terephthalate, G' ═ 1.7 × 109Pa, flexural rigidity per unit width of 1.8 × 10-5N·m2Thickness of 50 μm
Silicone Compound (EBECRYL350, manufactured by Daicel Cytec Co., Ltd.)
Inorganic Filler (silica Filler, Reososil MT-10, manufactured by Tokuyama Co., Ltd.)
Urethane acrylate (UN-5500, manufactured by Geneva industries Co., Ltd.)
Crosslinking agent (isocyanate-based crosslinking agent, Coronate L, manufactured by Japan Urethane Industrial Co., Ltd.)
Photopolymerization initiator (Irgacure 369, BASF corporation)
(3) Determination of storage modulus G' of adhesive layer
A measurement sample composed only of the pressure-sensitive adhesive layer was prepared in the same manner as in the production of the pressure-sensitive adhesive tape for semiconductor processing. From the measurement sample, a long test piece having a width of 10mm was prepared. Using an ultra-high pressure mercury ultraviolet irradiator to reach a cumulative intensity of 2500mJ/cm2The pressure-sensitive adhesive layer was irradiated with 405nm ultraviolet light from the release film side of the test piece to cure the pressure-sensitive adhesive layer. After removing the release films from both sides of the cured test piece, the temperature was measured in a constant temperature-rising stretching mode at a temperature-rising rate of 10 ℃/min and at a frequency of 10Hz by using a viscoelasticity spectrometer (DVA-200, manufactured by IT measurement and control Co., Ltd.). The storage modulus at 23 ℃ at this time is described as the storage modulus of the adhesive layer.
(4) Fa (23 ℃) and Fa (T)1) Measurement of (2)
The surface of a copper plate (copper plate satisfying JIS H3100: 2018, C1100P, manufactured by Engineering Test Service) having a thickness of 1mm was washed with ethanol and sufficiently dried. A2 kg roller was reciprocated 1 time, and a semiconductor processing adhesive tape previously cut to a width of 25mm and a length of 10cm was attached to a copper plate to obtain a laminate. Irradiating the adhesive layer with 405nm violet light from the substrate side using an ultra-high pressure mercury ultraviolet irradiatorThe outside line was left for 25 seconds to cure the adhesive layer. The irradiation intensity was 100mW/cm2The illuminance is adjusted. Then, at Fa (T)1) In the measurement, the temperature T shown in Table 1 was measured by heating in advance1The oven of (2) heat-treats the laminate. The temperature of the back surface (substrate side) of the adhesive tape for semiconductor processing was measured with a temperature measuring sensor (A-231K-01-1-TC 1-ANP, manufactured by Anritimeter Co., Ltd.), and the laminate was heated to a temperature T1。
The adhesive tape for semiconductor processing of the laminate was set at a temperature of 23 ℃ or T using Autograph (Shimadzu corporation)1And peeled at a tensile speed of 300mm/min in a direction of 180 ℃ under an atmosphere of a humidity of 50%, and peel forces Fa (23 ℃) and Fa (T)1)。
(5) Manufacture of temporary fixation straps
10 parts by weight of urethane acrylate and 0.5 part by weight of a crosslinking agent were added to 100 parts by weight of the resin solid content of the ethyl acetate solution of the adhesive polymer obtained above, and the mixture was mixed at a stirring speed of 100rpm to obtain an adhesive solution. Next, the pressure-sensitive adhesive solution was applied to the release-treated surface of the polyethylene terephthalate film whose surface was release-treated with a doctor blade so that the thickness after drying became 5 μm, and the film was heat-dried at 105 ℃ for 5 minutes to obtain a pressure-sensitive adhesive layer. The obtained adhesive layer was attached to the corona-treated surface of the base material a having one surface subjected to corona treatment, and cured at 40 ℃ for 6 days to obtain a temporary fixing tape.
The adhesion of the temporary fixing tape to a copper plate (copper plate satisfying JIS H3100: 2018, C1100P, manufactured by Engineering Test Service) was measured, and it was 6.5N/inch.
(6) Fb (23 ℃ C.) and Fb (T)1) Measurement of (2)
In the production of an adhesive tape for semiconductor processing, the surface of a base material (the surface on which an adhesive layer is formed) before the adhesive layer is formed is bonded to a copper plate (C1100P) using a double-sided tape (double-sided tape 560 manufactured by waterlogging chemical corporation). A2 kg roller was reciprocated 1 time, and a temporary tape previously cut to have a width of 25mm and a length of 10cm was attached to the back surface of the substrate (unshaped tape)The surface on the side forming the adhesive layer), a laminate was obtained. Then, at Fb (T)1) In the measurement, the temperature T shown in Table 1 was measured by heating in advance1The oven of (2) heat-treats the laminate. The temperature of the back surface of the temporary fixing tape (the base material side of the temporary fixing tape) was measured by a temperature measuring sensor (A-231K-01-1-TC 1-ANP, manufactured by ANLIMETER Co., Ltd.), and the laminate was heated to a temperature T1。
The temporary tape of the laminate was fixed at a temperature of 23 ℃ or T using Autograph (Shimadzu corporation)1And peeled at a tensile rate of 300mm/min in a direction of 180 ℃ under an atmosphere of a humidity of 50%, and the peel forces Fb (23 ℃) and Fb (T)1)。
(7) PU force and temperature T1Measurement of the PU force
The back surface (base material side) of the adhesive tape for semiconductor processing was bonded to a dicing tape, and substrates each having a size of 10mm × 10mm were bonded to the adhesive layer side with a roller. The substrate after singulation was prepared from the back side (substrate side) of the adhesive tape for semiconductor processing using a bench tensile compression tester (MCT-2150, manufactured by a & D), and was picked up. The force required to peel off the singulated substrates was measured as PU (pick up) force (PU (pick up) force).
With respect to the temperature T1The PU force is applied to the substrate after the substrate is formed into a single piece and then the substrate is heated to the temperature T in advance1The oven of (2) heat-treats the laminate. The temperature of the back surface (substrate side) of the adhesive tape for semiconductor processing was measured by a temperature measuring sensor (A-231K-01-1-TC 1-ANP, manufactured by Anlim corporation), and the laminate was heated to a temperature T1Is picked up in the same manner in the state of (1), and the temperature T is carried out1Measurement of PU force at the time.
(8) Fabrication of semiconductor devices
The steps shown in fig. 2 (a1) to (a4) are performed as follows.
The adhesive tape 2 for semiconductor processing is attached to the surface of the copper foil 7a of the copper-clad laminate substrate 7 (CCL-EL 190T/GEPL-190T, product of MITSUBISHI GAS CHEMICAL) (FIG. 2 (a 1)). Using ultra-high pressure mercury ultravioletThe irradiator irradiates the pressure-sensitive adhesive layer 2a with ultraviolet rays of 405nm from the substrate 2b side for 25 seconds to cure the pressure-sensitive adhesive layer 2 a. The irradiation intensity was 100mW/cm2The illuminance is adjusted.
The copper-clad laminate substrate 7 to which the adhesive tape 2 for semiconductor processing is attached is temporarily fixed to a dicing tape 8 (manufactured by DENKA, エレグリップ UPH-1510M4) so that the copper-clad laminate substrate 7 side comes into contact with the dicing tape 9 ((a 2) of fig. 2).
The copper-clad laminate substrate 7 to which the adhesive tape 2 for semiconductor processing is attached is singulated (diced) into 10mm squares using a dicing apparatus (DFD 6361, manufactured by DISCO corporation) (fig. 2 (a 3)).
Using an ultra-high pressure mercury ultraviolet irradiator to reach a cumulative intensity of 2500mJ/cm2The dicing tape 8 was cured by irradiating ultraviolet rays of 405 nm. The irradiation intensity was 50mW/cm2The illuminance is adjusted. Then, the dicing tape 8 is peeled off.
The copper-clad laminate 7 to which the semiconductor processing adhesive tape 2 after singulation is attached is temporarily fixed to the temporary fixing tape 3 so that the semiconductor processing adhesive tape 2 side is in contact with the temporary fixing tape, and is mounted again on the dicing frame 9 ((a 4) of fig. 2).
The copper-clad laminate substrate 7 to which the singulated adhesive tape 2 for semiconductor processing has been attached is subjected to a heat treatment for 1 hour together with the dicing frame 9 using an oven heated to 150 in advance. The phrase "heating at 150 ℃ for 1 hour" means that the temperature and time required for the masking treatment of the semiconductor package are assumed and set. After a predetermined time has elapsed, the copper-clad laminate 7 to which the adhesive tape 2 for semiconductor processing has been attached, which has been singulated, is taken out together with the dicing frame 9, and sufficiently cooled in an environment at a temperature of 23 ℃ and a relative humidity of 50%.
Heated to a temperature T by blowing warm air using a die bonder (BestemD 02, manufactured by Canon Machinery Co., Ltd.)1Thereby heating the mixture to a temperature T shown in Table 11The copper-clad laminated substrate 7 after singulation is picked up.
Examples 2 to 8 and reference examples 1 to 5
Adhesive tapes and temporary fixing tapes for semiconductor processing were obtained in the same manner as in example 1, except that the composition of the adhesive layer and the substrate were changed as described in table 1. In the same manner as in example 1, the respective physical properties were measured, and a semiconductor device was manufactured.
Substrate B (polyethylene terephthalate, G' ═ 1.7 × 10)9Pa, flexural rigidity per unit width of 1.4X 10-4 N.m2Thickness of 100 μm/m
Substrate C (polyethylene terephthalate, G' ═ 1.7 × 10)9Pa, flexural rigidity per unit width of 2.2X 10-6 N.m2Thickness 25 μm/m
< evaluation >
The adhesive tape for semiconductor processing, the temporary securing tape, and the method for manufacturing the semiconductor device in the examples and the reference examples were evaluated in the following manner. The results are shown in Table 1.
(1) Pick-up (Japanese text: ピックアップ) evaluation
(1-1) interfacial peeling between semiconductor Package and adhesive tape
Temperature T1The Pick-up force (Pick up force) at the time of the process is less than 1N, and is determined as a, the case where 1N or more and less than 5N is determined as B, the case where 5N or more and less than 10N is determined as C, and the case where 10N or more (singulated non-peeled substrate) is determined as D.
(1-2) adhesion of temporary fixing tape to backside of adhesive tape
In the production of the semiconductor device of the above (8), when the copper-clad laminate 7 after singulation is picked up, the peeling at the interface between the back surface (base material side) of the adhesive tape 2 for semiconductor processing and the temporary fixing tape 3 is determined.
The case where the adhesive tape 2 for semiconductor processing was completely peeled from the temporary fixing tape 3 was judged as a, the case where the adhesive tape was not completely peeled from the interface was judged as B, the case where the adhesive tape was peeled from the interface and was half or less of the total area was judged as C, and the case where the adhesive tape was completely peeled from the temporary fixing tape 3 was judged as D.
(2) Evaluation of other steps (other than picking)
In the production of the semiconductor device of the above (8), 50 singulated (diced) copper-clad laminate substrates 7 were randomly selected, the interface between the copper-clad laminate substrate 7 and the adhesive tape 2 for semiconductor processing was observed with an optical microscope, the presence or absence of peeling at the end was observed, and dicing peeling was evaluated according to the following criteria.
A was determined as a sample in which no end portion was peeled 300 μm or more out of 50 samples, B was determined as a sample in which the number of samples having end portions peeled 300 μm or more was less than 5%, and C was determined as a sample in which the number of samples having end portions peeled 300 μm or more was 5% or more. If the end portion is peeled off to less than 300 μm, the metal wrap-around during sputtering is small, and the yield is improved.
[ TABLE 1 ]
Figure BDA0003445930750000261
Industrial applicability
According to the present invention, it is possible to provide a method for manufacturing a semiconductor device and a laminate for semiconductor processing, which can suppress peeling at the interface between a temporary fixing tape and a semiconductor processing adhesive tape and can satisfactorily pick up a semiconductor package.
Description of the reference numerals
2: adhesive tape for semiconductor processing
2 a: adhesive layer
2 b: base material
3: temporary fixing strap
4: semiconductor package
5: metal film
6: pick-up needle
7: copper-clad laminated substrate
7 a: copper foil
8: cutting belt
9: cutting frame

Claims (10)

1. A method for manufacturing a semiconductor device, comprising the following step (3): in a semiconductor processing laminate in which a semiconductor package to which an adhesive tape for semiconductor processing is attached is laminated on a temporary fixing tape so that the side of the adhesive tape for semiconductor processing is in contact with the semiconductor package, and metal films are formed on the back surface and the side surfaces of the semiconductor package to which the adhesive tape for semiconductor processing is attached, the semiconductor package in which the metal films are formed on the back surface and the side surfaces is picked up from the adhesive tape for semiconductor processing,
in the step (3), the mixture is heated to a temperature T satisfying the following formula (1)1A semiconductor package having a metal film formed on the back surface and the side surface is picked up in a state of (1),
100＜{Fb(T1)/Fa(T1)} (1)
in the formula (1), Fa (T) represents the peeling force of the adhesive tape for semiconductor processing to the copper plate at the temperature T, Fa (T)1) Temperature T ═ T for Fa (T)1Fb (T) represents the peeling force of the temporary fixing tape to the adhesive tape for semiconductor processing at the temperature T, Fb (T)1) Temperature T ═ T for Fb (T)1The value of time.
2. The method of manufacturing a semiconductor device according to claim 1, wherein the step (1) and the step (2) are performed before the step (3),
a step (1) of temporarily fixing a semiconductor package to which a semiconductor processing adhesive tape is attached to a temporary fixing tape so that the semiconductor processing adhesive tape side is brought into contact with the temporary fixing tape,
and (2) forming a metal film on the temporary fixing tape on the back surface and the side surface of the semiconductor package to which the adhesive tape for semiconductor processing is attached.
3. Method for manufacturing a semiconductor device according to claim 1 or 2, wherein fa (T) is at a temperature T1The value of time Fa (T)1) Is 0.5N/inch or less.
4. The method for manufacturing a semiconductor device according to claim 1, 2 or 3, wherein Fa (23 ℃) which is a value at 23 ℃ is 0.04N/inch or more.
5. The method for manufacturing a semiconductor device according to claim 1, 2, 3 or 4, wherein Fb (23 ℃) which is a value of 23 ℃ is 3N/inch or more.
6. The method for manufacturing a semiconductor device according to claim 1, 2, 3, 4 or 5, wherein Fb (T) is at a temperature T1Value of time, namely Fb (T)1) Is 1N/inch or more and 50N/inch or less.
7. The method for manufacturing a semiconductor device according to claim 1, 2, 3, 4, 5 or 6, wherein the step (1-1) and the step (1-2) are performed before the step (1),
a step (1-1) of attaching an adhesive tape for semiconductor processing to the circuit surface of the semiconductor package,
and (1-2) dicing the semiconductor package to which the adhesive tape for semiconductor processing is attached to obtain singulated semiconductor packages to which the adhesive tape for semiconductor processing is attached.
8. The method for manufacturing a semiconductor device according to claim 7, wherein the adhesive tape for semiconductor processing comprises a base material and an adhesive layer laminated on at least one surface of the base material, and wherein the adhesive layer is a photocurable adhesive layer.
9. The method for manufacturing a semiconductor device according to claim 8, wherein the step (1-3) of irradiating light to the adhesive layer of the adhesive tape for semiconductor processing is performed after the step (1-1).
10. A laminate for semiconductor processing, which is a laminate for semiconductor processing in which a semiconductor package to which an adhesive tape for semiconductor processing is attached is laminated on a temporary fixing tape in such a manner that the adhesive tape side for semiconductor processing is brought into contact,
at a temperature ranging from 25 ℃ to 200 DEG CHas a temperature T satisfying the following formula (12，
100＜{Fb(T2)/Fa(T2)} (1’)
In the formula (1'), Fa (T) represents the peeling force of the adhesive tape for semiconductor processing to the copper plate at the temperature T, Fa (T)2) Denotes Fa (T) at temperature T ═ T2Fb (T) represents the peeling force of the temporary fixing tape to the adhesive tape for semiconductor processing at the temperature T, Fb (T)2) Denotes Fb (T) at a temperature T ═ T2The value of time.
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