TW202136050A - Manufacturing method for semiconductor device and a laminate for semiconductor processing - Google Patents

Abstract

The purpose of the present invention is to provide a manufacturing method for a semiconductor device and a laminate for semiconductor processing by which peeling is suppressed at an interface between a temporary fixing tape and an adhesive tape for semiconductor processing, and by which it is possible to favorably pick up a semiconductor package. The present invention involves a manufacturing method for a semiconductor device, wherein the method comprises a step (3) in which, in a laminate for semiconductor processing obtained by laminating a semiconductor package to which a semiconductor processing adhesive tape is adhered on a temporary fixing tape such that the semiconductor processing adhesive tape-side is in contact, and forming a metal film on the rear surface and side surfaces of the semiconductor package to which the semiconductor processing adhesive tape is adhered, the semiconductor package in which the metal film is formed on the rear surface and the side surfaces is picked up from the semiconductor processing adhesive tape; and in step (3), the semiconductor package in which the metal film is formed on the rear surface and the side surfaces is picked up when heated to a temperature T1 that satisfies formula (1) below. (1) 100 < {Fb(T1)/Fa(T1)} In formula (1): Fa(t) represents the peel strength of the semiconductor processing adhesive tape at temperature t with respect to a copper plate; Fa(T1) represents the value of Fa(t) at temperature t = T1; Fb(t) represents the peel strength of the temporary fixing tape at temperature t with respect to the semiconductor processing adhesive tape; and Fb(T1) represents the value of Fb(t) at temperature t = T1.

Description

Manufacturing method of semiconductor device, and laminated body for semiconductor processing

The present invention relates to a method for manufacturing a semiconductor device and a laminated body for semiconductor processing that can suppress peeling at the interface between a temporary fixing tape and an adhesive tape for semiconductor processing, and perform a good pick-up of a semiconductor package.

When processing electronic parts such as semiconductors, in order to easily control the electronic parts and prevent them from being damaged, the following operations are carried out: fixing the electronic parts to a support plate via an adhesive composition, or attaching an adhesive tape to the electronic parts for protection. For example, in the case of grinding a thick film wafer cut from a high-purity silicon single crystal to a specific thickness to make a thin film wafer, the thick film wafer is bonded to the support plate through the adhesive composition. operate.

In addition, when dicing a large-area semiconductor package to obtain a plurality of singulated semiconductor packages, the operation of attaching the adhesive tape to the semiconductor package is also performed. In this step, the semiconductor package attached with the adhesive tape is then temporarily fixed on an adhesive tape called a dicing tape, and the semiconductor package together with the adhesive tape is cut on the dicing tape. After dicing, the singulated semiconductor package is peeled from the dicing tape and/or the adhesive tape by pin picking or the like.

In this way, the adhesive composition or adhesive tape used in the electronic parts is required to be able to firmly fix the electronic parts during the processing steps with high adhesiveness, and can be peeled off without damaging the electronic parts after the steps (hereinafter, also referred to as It is "high adhesion and easy peeling"). As a means for achieving high adhesion and easy peeling, for example, Patent Document 1 discloses an adhesive sheet that uses a polyfunctional monomer or oligomer with radiation polymerizable functional groups in the side chain or main chain of the polymer. Bonded adhesive. Since the polymer has a radiation polymerizable functional group, it will be cured by irradiating ultraviolet rays. With this property, the adhesive force can be reduced by irradiating ultraviolet rays during peeling, so that it can be peeled without leaving a paste. Prior art literature Patent literature

Patent Document 1: Japanese Patent Application Laid-Open No. 5-32946

[The problem to be solved by the invention]

On the other hand, the high frequency of communication devices such as mobile phones has been continuously developed, which has caused the problem of malfunction of semiconductor packages caused by high frequency noise. Especially in recent years, communication equipment has been gradually miniaturized, which has increased the density of components and reduced the voltage of components, so semiconductor packages are susceptible to high-frequency noise. To solve this problem, for example, the following operations are performed: on the back and side surfaces of the semiconductor package after dicing and singulation, a shielding process covered with a metal film is performed by sputtering or the like to cut off high frequencies. In this shielding treatment, in order to protect the circuit surface (front side) and prevent contamination, the operation of attaching the adhesive tape to the circuit surface (front side) of the semiconductor package is also performed. That is, the semiconductor package with the adhesive tape attached to the circuit surface (front) is temporarily fixed to the temporary fixing tape, and the metal film is formed on the back and side surfaces of the semiconductor package on the temporary fixing tape.

After the shielding process, the semiconductor package with the metal film formed on the back and side surfaces is peeled off from the temporary fixing tape and the adhesive tape by pin picking or the like. However, depending on the height and shape of the electrode on the circuit surface (front) of the semiconductor package, sometimes it is impossible to properly pick up the semiconductor package after the shielding process. The object of the present invention is to provide a method for manufacturing a semiconductor device and a laminated body for semiconductor processing that can suppress peeling at the interface between a temporary fixing tape and an adhesive tape for semiconductor processing, and perform a good pickup of a semiconductor package. [Technical means to solve the problem]

The present invention is a method of manufacturing a semiconductor device, which has the following step (3): picking up a semiconductor package with a metal film formed on the back and side surfaces from the adhesive tape for semiconductor processing in the following semiconductor processing laminate, the semiconductor The build-up system for processing makes the semiconductor package attached with the adhesive tape for semiconductor processing laminated on the temporary fixing tape in such a way that the side of the adhesive tape for semiconductor processing is in contact, and is applied to the semiconductor package with the adhesive tape for semiconductor processing attached Metal films are formed on the back and side surfaces of the body; and in the above step (3), the semiconductor package with the metal films formed on the back and side surfaces is picked up under the state of being _{heated to a temperature T 1 that satisfies the following formula (1)} . 100＜{Fb(T ₁ )/Fa(T ₁ )} (1) In formula (1), Fa(t) represents the peeling force of the adhesive tape for semiconductor processing at the temperature t to the copper plate, Fa(T ₁ ) represents Fa(t) is _{the value at temperature t=T 1} , Fb(t) represents the peeling force of the temporary fixing tape at temperature t to the adhesive tape for semiconductor processing, Fb(T ₁ ) represents Fb(t) at temperature t=T The value of _1. The present invention will be described in detail below.

When picking up the semiconductor package after the shielding process, peeling occurs at the interface between the temporary fixing tape and the adhesive tape for semiconductor processing instead of the interface between the semiconductor package and the adhesive tape (adhesive tape for semiconductor processing), which may cause picking failure. In response to this problem, the inventors of the present invention focused on the "adhesive force of the adhesive tape for semiconductor processing to the adherend (standard copper plate)" and "the adhesive force of the temporary fixing tape to the adhesive tape for semiconductor processing". The inventors of the present invention found that by picking up the semiconductor package in a state where the ratio of these adhesive forces meets a temperature within a specific range, peeling at the interface between the temporary fixing tape and the adhesive tape for semiconductor processing can be suppressed. The semiconductor package is picked up, thereby completing the present invention.

In the manufacturing method of the semiconductor device of the present invention, the following step (3) is performed: in the specific semiconductor processing laminate, pick up the semiconductor package with the metal film formed on the back and side surfaces from the semiconductor processing adhesive tape. Here, the so-called specific laminated body for semiconductor processing means that the semiconductor package to which the adhesive tape for semiconductor processing is attached is laminated on the temporary fixing tape in such a way that the side of the adhesive tape for semiconductor processing is in contact, and the above-mentioned Adhesive tapes for semiconductor processing have metal films formed on the back and sides of the semiconductor package. The method of obtaining such a laminate for semiconductor processing is not particularly limited, but it is preferably a method of obtaining a laminate for semiconductor processing by performing the following steps (1) and (2) before the above step (3). That is, in the manufacturing method of the semiconductor device of the present invention, it is preferable to first perform the following step (1): temporarily fix the semiconductor package with the adhesive tape for semiconductor processing attached to the side of the adhesive tape for semiconductor processing On the temporary fixing tape.

The adhesive tape for semiconductor processing may be a supported type having a substrate and an adhesive layer laminated on at least one side of the substrate, or an unsupported type having an adhesive layer without a substrate. Among them, in terms of easy adjustment of Fb(t)/Fa(t) as described below and better pickup of the semiconductor package, it is preferable to have a substrate and a substrate laminated on one side of the substrate. Single-sided support type of adhesive layer. When the adhesive tape for semiconductor processing is a single-sided support type, the substrate side of the adhesive tape for semiconductor processing is in contact with the adhesive surface of the temporary fixing tape.

The material of the base material of the adhesive tape for semiconductor processing is not particularly limited, and it is preferably a heat-resistant material. As the material of the base material of the adhesive tape for semiconductor processing, for example, polyethylene terephthalate, polyethylene naphthalate, polyacetal, polyamide, polycarbonate, polyphenylene ether, Polybutylene terephthalate, ultra-high molecular weight polyethylene, parallel polystyrene, polyarylate, polysulfide, polyether sulfide, polyphenylene sulfide, polyether ether ketone, polyimide, polyether ether Imine, fluororesin, liquid crystal polymer, etc. Among them, in terms of excellent heat resistance, polyethylene terephthalate and polyethylene naphthalate are preferred.

The base material of the adhesive tape for semiconductor processing preferably has an easy-to-adhesive layer on the surface on the side opposite to the adhesive layer. The easy-to-adhesion layer is formed in the substrate of the adhesive tape for semiconductor processing on the surface opposite to the adhesive layer, that is, the back surface. Since the substrate of the adhesive tape for semiconductor processing has the easy-to-bond layer, it is easy to adjust Fb(t)/Fa(t) as described below, and the semiconductor package can be picked up better.

Examples of the easily-adhesive layer include SiO _x layer, metal oxide layer, organometallic compound layer, polysiloxane compound layer, polymerizable polymer layer, corona treatment layer, plasma treatment layer, and the like. Among them, the organometallic compound layer and the corona treatment layer are preferable in terms of higher bonding ease effect.

As a method of easy bonding using organic compounds or inorganic compounds (ie, the above-mentioned SiO _x layer, metal oxide layer, organometallic compound layer, polysiloxane compound layer, polymerizable polymer layer, etc. forming method), for example, Examples include vapor deposition, coating, and the like. As a method of forming the above-mentioned corona treatment layer, for example, a high-frequency power supply device (AGI-020 manufactured by Kasuga Denki Co., Ltd.) can be used to make the film reciprocate once at an output of 0.24 Kw, a speed of 40 mm/min, and an electrode distance of 1 mm. , The method of corona treatment on the back of the substrate, etc.

The above-mentioned adhesive tape for semiconductor processing preferably has a bending stiffness per unit width in the TD direction at 23°C of 2.38×10 ^-7 N·m ² /m or more and 1.50×10 ^-4 N·m ² /m or less . When the bending stiffness per unit width in the TD direction at 23°C is within the above range, the adherend can be protected more reliably, and an adhesive tape for semiconductor processing with excellent usability can be made. The bending stiffness per unit width in the TD direction at 23°C is more preferably 4.12×10 ^-7 N·m ² /m or more, still more preferably 9.76×10 ^-7 N·m ² /m or more, and more preferably It is 8.5×10 ^-5 N·m ² /m or less, more preferably 1.0×10 ^-5 N·m ² /m or less. Here, the so-called TD (Transverse Direction) direction refers to the direction perpendicular to the extrusion direction when the base material is extruded into a sheet shape. Furthermore, the bending stiffness per unit width is expressed as the value obtained by dividing the product of the tensile modulus E and the second moment I of the section by the length of the substrate width. The tensile elastic modulus E can be used, for example, with a viscoelastic spectrometer (such as DVA-200, IT Meter. and Control, Inc., etc.), in a constant-rate heating-up stretching mode, a heating rate of 10°C/min, and a frequency of 10 Hz. The conditions are determined. The second moment I of the cross section of the base material (rectangular in cross section) is expressed by the following formula (3). I = (the length of the substrate width (m)) × (the thickness of the substrate (m)) ³ /12 (unit m ⁴ ) (3)

The storage elastic modulus of the substrate of the adhesive tape for semiconductor processing is not particularly limited, but is preferably 5.0×10 ⁷ Pa or more and 1.0×10 ¹¹ Pa or less. Since the storage elastic modulus of the base material of the adhesive tape for semiconductor processing is within the above range, the base material is easily bent moderately, and therefore it is possible to further suppress the semiconductor package when dicing the semiconductor package together with the adhesive tape for semiconductor processing. The package is peeled off, and the semiconductor package is picked up better. The storage elastic modulus of the substrate of the adhesive tape for semiconductor processing is more preferably 8.0×10 ⁸ Pa or more, more preferably 1.0×10 ⁹ Pa or more, and more preferably 5.0×10 ¹⁰ Pa or less, and still more preferably Below 5.0×10 ⁹ Pa. As a method of measuring the storage elastic modulus of the substrate of the adhesive tape for semiconductor processing, for example, methods such as dynamic viscoelasticity measurement and tensile test can be cited. More specifically, a short strip test piece with a width of 10 mm was produced. For the obtained test piece, a tensile testing machine (such as RTG1250A, manufactured by AND company, etc.) can be used to perform a tensile test at a temperature of 23°C, a humidity of 50%, and a test speed of 300 mm/min, according to JIS K7161-1 , Calculate the elastic modulus of tensile storage.

The UV transmittance of the substrate of the adhesive tape for semiconductor processing is not particularly limited. When the adhesive layer of the adhesive tape for semiconductor processing is a light-curing adhesive layer, the UV transmittance at 405 nm is preferably 1 %above. The ultraviolet transmittance at 405 nm is more preferably 10% or more, more preferably 15% or more, and particularly preferably 50% or more. Since the ultraviolet transmittance at 405 nm is higher than these lower limits, when the adhesive layer of the adhesive tape for semiconductor processing is a light-curing adhesive layer, the adhesive layer can be made sufficiently without using a photosensitizer. hardening. The upper limit of the ultraviolet transmittance at 405 nm is not particularly limited, the higher the better, and it is usually 100% or less.

The thickness of the substrate of the adhesive tape for semiconductor processing is not particularly limited, and the preferred lower limit is 5 μm, and the preferred upper limit is 200 μm. When the thickness of the base material of the adhesive tape for semiconductor processing is within the above range, an adhesive tape for semiconductor processing with appropriate plasticity and excellent usability can be produced. The lower limit of the thickness of the substrate of the adhesive tape for semiconductor processing is more preferably 10 μm, and the upper limit is more preferably 150 μm.

The adhesive constituting the adhesive layer of the adhesive tape for semiconductor processing is not particularly limited, and it may be a non-curing type adhesive or a curing type adhesive. Specifically, for example, rubber-based adhesives, acrylic-based adhesives, vinyl alkyl ether-based adhesives, silicone-based adhesives, polyester-based adhesives, polyamide-based adhesives, urethane ( urethane) adhesives, styrene-diene block copolymer adhesives, etc. Among them, in terms of excellent heat resistance and easy adjustment of adhesive force, an acrylic adhesive is suitable, and an acrylic curable adhesive is more preferable.

Examples of the curable adhesive include photocurable adhesives that are crosslinked and cured by light irradiation, and thermosetting adhesives that are crosslinked and cured by heating. Among them, a light-curing type adhesive is preferable in terms of being hard to damage the adherend and being easily hardened. That is, the above-mentioned adhesive layer may include a light-curing adhesive layer, a thermosetting adhesive layer, and the like, and a light-curing adhesive layer is preferable. As said photocurable adhesive agent, the adhesive agent which has a polymerizable polymer as a main component and contains a photopolymerization initiator is mentioned, for example. As said thermosetting adhesive, the adhesive which has a polymerizable polymer as a main component and contains a thermal polymerization initiator is mentioned, for example.

The above-mentioned polymerizable polymer can be preliminarily synthesized with a (meth)acrylic polymer having a functional group in the molecule (hereinafter, referred to as a functional group-containing (meth)acrylic polymer), and the It is obtained by reacting a functional group that reacts with the above-mentioned functional group and a radically polymerizable unsaturated bond compound (hereinafter referred to as a functional group-containing unsaturated compound).

The functional group-containing (meth)acrylic polymer can be, for example, alkyl acrylate and/or alkyl methacrylate whose carbon number of the alkyl group is usually in the range of 2-18, and functional group-containing The monomer, and if necessary, can be obtained by copolymerization with other monomers for modification that can be copolymerized.

The weight average molecular weight of the functional group-containing (meth)acrylic polymer is not particularly limited, but is usually about 200,000 to 2 million. In addition, the weight average molecular weight can be determined using gel permeation chromatography. More specifically, for example, the obtained polymer is adjusted to 0.2% by weight with tetrahydrofuran (THF) to obtain a diluted solution, and the diluted solution is filtered with a filter (material: polytetrafluoroethylene, pore diameter: 0.2 μm). The obtained filtrate was applied to a gel permeation chromatography (manufactured by Waters, 2690 Separations Model, or its equivalent), and GPC measurement was performed under the conditions of a sample flow rate of 1 mL/min and a column temperature of 40°C, and the determination of poly The weight average molecular weight (Mw) was calculated by converting the molecular weight into styrene. Use GPC KF-806L (manufactured by Showa Denko Co., Ltd. or its equivalent) as the column, and a differential refractometer as the detector.

Examples of the functional group-containing monomers include carboxyl group-containing monomers such as acrylic acid and methacrylic acid, or hydroxyl group-containing monomers such as hydroxyethyl acrylate and hydroxyethyl methacrylate, or glycidyl acrylate, Epoxy-containing monomers such as glycidyl methacrylate. In addition, as the above-mentioned functional group-containing monomers, for example, isocyanate group-containing monomers such as isocyanatoethyl acrylate and isocyanatoethyl methacrylate, or aminoethyl acrylate, methyl Amino ethyl acrylate and other monomers containing amine groups.

Examples of other monomers for modification that can be copolymerized include various monomers used in general (meth)acrylic polymers such as vinyl acetate, acrylonitrile, and styrene.

As the functional group-containing unsaturated compound that reacts with the above-mentioned functional group-containing (meth)acrylic polymer, the above-mentioned functional group-containing (meth)acrylic polymer can be used according to the functional group of the above-mentioned functional group-containing (meth)acrylic polymer. The monomers are the same. For example, when the functional group of the aforementioned functional group-containing (meth)acrylic polymer is a carboxyl group, an epoxy group-containing monomer or an isocyanate group-containing monomer can be used. When the functional group of the above-mentioned functional group-containing (meth)acrylic polymer is a hydroxyl group, an isocyanate group-containing monomer can be used. When the functional group of the above-mentioned functional group-containing (meth)acrylic polymer is an epoxy group, a carboxyl group-containing monomer or an amide group-containing monomer such as acrylamide can be used. When the functional group of the above-mentioned functional group-containing (meth)acrylic polymer is an amine group, an epoxy group-containing monomer can be used.

In order to obtain the above-mentioned functional group-containing (meth)acrylic polymer, it is only necessary to make the raw material monomer undergo a radical reaction in the presence of a polymerization initiator. As a method for radically reacting the above-mentioned raw material monomers, that is, a polymerization method, conventionally known methods can be used, and examples thereof include solution polymerization (boiling point polymerization or isothermal polymerization), emulsion polymerization, suspension polymerization, and bulk polymerization. The polymerization initiator used in the radical reaction to obtain the functional group-containing (meth)acrylic polymer is not particularly limited, and examples thereof include organic peroxides and azo compounds. As the above-mentioned organic peroxides, for example, 1,1-bis(tertiary hexylperoxy)-3,3,5-trimethylcyclohexane, tertiary hexyl peroxypivalate, peroxy Tertiary butyl pivalate, 2,5-dimethyl-2,5-bis(2-ethylhexylperoxy) hexane, tertiary hexyl peroxide 2-ethylhexanoate, peroxide Tertiary butyl 2-ethylhexanoate oxide, tertiary butyl peroxide isobutyrate, tertiary butyl peroxide 3,5,5-trimethylhexanoate, tertiary butyl peroxide laurate, etc. As said azo compound, azobisisobutyronitrile, azobiscyclohexanecarbonitrile, etc. are mentioned, for example. These polymerization initiators may be used alone, or two or more of them may be used in combination.

、十二烷基-9-氧硫𠮿

、二甲基-9-氧硫𠮿

、二乙基-9-氧硫𠮿

、α-羥基環己基苯基酮、2-羥基甲基苯基丙烷等。該等光聚合起始劑可單獨使用，亦可併用兩種以上。The photocurable adhesive layer preferably contains a photopolymerization initiator. The above-mentioned photopolymerization initiator may be activated by irradiating light with a wavelength of 250 to 800 nm, for example. As such a photopolymerization initiator, for example, acetophenone derivative compounds such as methoxyacetophenone, or benzoin ether-based compounds such as benzoin propyl ether and benzoin isobutyl ether, or benzyl dimethyl condensate Ketal derivative compounds such as ketones and acetophenone diethyl ketal, or phosphine oxide derivative compounds. Also, exemplified are: bis(η5-cyclopentadienyl) titanocene derivative compound, benzophenone, Michele ketone, chloro-9-oxysulfur 𠮿

, Dodecyl-9-oxysulfur 𠮿

, Dimethyl-9-oxysulfur 𠮿

, Diethyl-9-oxysulfur 𠮿

, Α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl propane, etc. These photopolymerization initiators may be used alone, or two or more of them may be used in combination.

The thermosetting adhesive layer preferably contains a thermal polymerization initiator. Examples of the thermal polymerization initiator include those that decompose by heat to generate active radicals that initiate polymerization and hardening. Specifically, for example, dicumyl peroxide, di-tertiary butyl peroxide, tertiary butyl peroxybenzoate, tertiary butyl hydroperoxide, benzyl peroxide, Cumene hydroperoxide, diisopropylbenzene hydroperoxide, p-menthane hydroperoxide, di-tertiary butyl peroxide, etc. The commercially available products of the thermal polymerization initiator are not particularly limited, and examples thereof include PERBUTYL D, PERBUTYL H, PERBUTYL P, and PERPENTA H (all manufactured by NOF Corporation). These thermal polymerization initiators may be used alone, or two or more of them may be used in combination.

The adhesive layer may further contain a radically polymerizable polyfunctional oligomer or monomer. By containing radically polymerizable polyfunctional oligomers or monomers, the photocurability and thermosetting properties of the adhesive layer are improved. The above-mentioned polyfunctional oligomer or monomer is not particularly limited, but preferably has a weight average molecular weight of 10,000 or less. In terms of efficiently performing three-dimensional network formation of the adhesive layer by light irradiation or heating, the polyfunctional oligomer or monomer preferably has a weight average molecular weight of 5000 or less and has intramolecular radical polymerizability. The number of unsaturated bonds is 2-20.

As the above-mentioned polyfunctional oligomers or monomers, for example, trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, neopentaerythritol triacrylate, neopentaerythritol tetraacrylate, two Neopentylerythritol monohydroxy pentaacrylate, dineopentaerythritol hexaacrylate, and these methacrylates, etc. In addition, as the above-mentioned polyfunctional oligomer or monomer, for example, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available The oligoester acrylates, and the methacrylates, etc. These polyfunctional oligomers or monomers may be used alone, or two or more of them may be used in combination.

The adhesive layer may further contain inorganic fillers such as fumed silica. By containing the inorganic filler, the cohesive force of the adhesive layer increases, and the releasability of the adhesive tape for semiconductor processing is improved, so that the semiconductor package can be picked up more satisfactorily.

The adhesive layer preferably contains a crosslinking agent. By containing the crosslinking agent, the cohesive force of the adhesive layer increases, and the peelability of the adhesive tape for semiconductor processing is improved, so that the semiconductor package can be picked up more satisfactorily. The said crosslinking agent is not specifically limited, For example, an isocyanate type crosslinking agent, an epoxy type crosslinking agent, an aziridine type crosslinking agent, a metal chelate type crosslinking agent, etc. are mentioned. Among them, an isocyanate-based crosslinking agent is preferred in terms of further improvement in adhesive force.

The content of the crosslinking agent is preferably 0.1 parts by weight or more and 20 parts by weight or less with respect to 100 parts by weight of the adhesive constituting the adhesive layer. When the content of the cross-linking agent is within the above-mentioned range, the adhesive can be appropriately cross-linked and the adhesive force is improved. From the viewpoint of further improving the adhesion, the lower limit of the content of the crosslinking agent is more preferably 0.5 parts by weight, the upper limit is more preferably 15 parts by weight, the lower limit is still more preferably 1.0 part by weight, and the upper limit is more preferably 10 parts by weight. .

The adhesive layer may contain well-known additives such as plasticizers, resins, surfactants, waxes, and particulate fillers. These additives may be used alone, or two or more of them may be used in combination.

The storage elastic modulus of the adhesive layer at 23° C. is preferably 8.5×10 ⁵ Pa or more and 1.7×10 ⁹ Pa or less. When the storage elastic modulus of the adhesive layer at 23°C is within the above range, it can be attached to the adherend with sufficient adhesive force, and the adherend can be sufficiently fixed. In addition, the releasability of the adhesive tape for semiconductor processing is improved, so that the semiconductor package can be picked up more satisfactorily. From the viewpoint of making the adhesive force and peelability good, the storage elastic modulus of the adhesive layer at 23°C is more preferably 1.7×10 ⁶ Pa or more, still more preferably 8.5×10 ⁶ Pa or more, and more It is preferably 1.7×10 ⁸ Pa or less, and more preferably 8.5×10 ⁷ Pa or less. Furthermore, when the adhesive is a hardening type adhesive, the storage elastic modulus of the adhesive layer refers to the storage elastic modulus of the adhesive layer after hardening. In the case of thermosetting adhesives, the state after heating at 120°C for 1 hour and then heating at 175°C for 1 hour is set to be cured. In the case of light-curing adhesives, ultra-high pressure mercury ultraviolet rays will be used The irradiator irradiated the adhesive layer with 405 nm ultraviolet rays from the substrate side so that the cumulative intensity became 2500 mJ/cm ^{2 and set it as cured.} As a method for measuring the storage elastic modulus of the adhesive layer at 23° C., for example, methods such as dynamic viscoelasticity measurement can be cited. More specifically, a viscoelastic spectrometer (such as DVA-200, IT Meter. and Control, Inc., etc.) can be used to perform the test in a constant-rate heating and stretching mode, a heating rate of 10°C/min, and a frequency of 10 Hz. Determination.

The thickness of the adhesive layer is not particularly limited, and the preferred lower limit is 5 μm, and the preferred upper limit is 500 μm. When the thickness of the adhesive layer is within the above range, it can be attached to the adherend with sufficient adhesive force, and the adherend can be sufficiently fixed. From the viewpoint of making the adhesive force good, the lower limit of the thickness of the adhesive layer is more preferably 10 μm, the upper limit is more preferably 300 μm, the lower limit is more preferably 15 μm, and the upper limit is more preferably 250 μm. A more preferable upper limit is 200 μm.

The method for obtaining the semiconductor package attached with the adhesive tape for semiconductor processing is not particularly limited. It is preferable to perform the following steps (1-1) and (1-2) before the above step (1), And a method of obtaining a semiconductor package attached with the adhesive tape for semiconductor processing. That is, it is preferable to perform the following steps before the above step (1): step (1-1), attaching an adhesive tape for semiconductor processing to the circuit surface of the semiconductor package; and step (1-2), dicing The semiconductor package to which the adhesive tape for semiconductor processing is attached is attached to obtain a singulated semiconductor package to which the adhesive tape for semiconductor processing is attached.

The method of attaching the adhesive tape for semiconductor processing is not particularly limited, and for example, a method using a laminating machine can be mentioned.

When the adhesive layer of the adhesive tape for semiconductor processing is a light-curing adhesive layer, it is preferable to irradiate the adhesive layer of the adhesive tape for semiconductor processing after the above step (1-1) Steps of Light (1-3). As a method of irradiating light to the adhesive layer of the adhesive tape for semiconductor processing, for example, an ultra-high pressure mercury ultraviolet irradiator is used to irradiate the adhesive layer from the substrate side to 405 ^{mJ/cm 2 so that the cumulative intensity becomes 2500 mJ/cm 2} The UV method of nm. The irradiation intensity at this time is not particularly limited, but is preferably 50-100 mW/cm ² .

The method of dicing is not particularly limited. For example, the following method may be mentioned: temporarily fixing the semiconductor package to which the adhesive tape for semiconductor processing is attached to the dicing tape, attaching the dicing tape to the dicing frame, and using a dicing device After singulating, peel off the dicing tape. The cutting device is not particularly limited. For example, DFD6361 manufactured by DISCO can be used.

In the above step (1), the semiconductor package with the adhesive tape for semiconductor processing obtained in the above manner is temporarily fixed on the temporary fixing tape in such a way that the adhesive tape for semiconductor processing is side-contacted. The above-mentioned temporary fixing tape is not particularly limited, and it is possible to use the adhesive tape for temporary fixing generally used in the manufacturing method of semiconductor devices, especially dicing or shielding.

The lower limit of the adhesive force of the temporary fixing tape to copper plates (copper plates meeting JIS H3100: 2018, such as C1100P, manufactured by Engineering Test Service) is 1.0 N/inch, and the upper limit is 35 N/inch. With the adhesive force of the temporary fixing tape to the copper plate within the above range, it is easy to adjust the following Fb(t)/Fa(t), and the semiconductor package can be picked up better. Moreover, if the adhesive force with respect to the said copper plate is more than the said lower limit, the peeling at the interface of the temporary fixing tape and the adhesive tape for semiconductor processing can be suppressed further. If the adhesive force with respect to the said copper plate is below the said upper limit, the usability of the said temporary fixation tape will improve. The lower limit of the adhesive force of the temporary fixing tape to the copper plate is 4 N/inch, and the upper limit is 15 N/inch. As a measuring method of the adhesive force of the said temporary fixing tape to a copper plate, the following methods are mentioned, for example. First, the above temporary fixing tape is placed on the copper plate with the adhesive layer facing the copper plate (copper plate meeting JIS H3100:2018, such as C1100P, manufactured by Engineering Test Service). Laminate the temporary fixing tape and the copper plate by reciprocating a 2 kg rubber roller at a speed of 300 mm/min. Then, it left still at 23 degreeC for 1 hour, and produced the test sample. For the test sample after standing, according to JIS Z0237, use an auto-stereograph (manufactured by Shimadzu Corporation) at a temperature of 23°C and a relative humidity of 50% at a tensile speed of 300 mm/min along the direction of 180° The temporary fixing tape was peeled off, and the peeling force was measured.

The temporary fixing tape preferably has a base material and an adhesive layer laminated on one surface of the base material. The adhesive layer of the temporary fixing tape is not particularly limited, and is preferably a silicone adhesive layer. By having the silicone adhesive layer, the heat resistance of the temporary fixing tape is improved. The polysiloxane compound constituting the polysiloxane adhesive layer is not particularly limited, and examples thereof include polysiloxane, addition-curing polysiloxane, peroxide-curing polysiloxane, and the like.

The thickness of the adhesive layer of the temporary fixing tape is not particularly limited, and the preferred lower limit is 5 μm, and the preferred upper limit is 500 μm. When the thickness of the adhesive layer of the temporary fixing tape is within the above range, it can be attached to the adherend with sufficient adhesive force, and the adherend can be sufficiently fixed. From the viewpoint of making the adhesive force better, the lower limit of the thickness of the adhesive layer of the temporary fixing tape is more preferably 10 μm, the upper limit is more preferably 300 μm, the lower limit is more preferably 15 μm, and the upper limit is more preferably 250 μm, and a more preferable upper limit is 200 μm.

The material of the substrate for temporarily fixing the adhesive tape is not particularly limited, and it is preferably a heat-resistant material. As the material of the substrate for temporarily fixing the adhesive tape, for example, polyethylene terephthalate, polyethylene naphthalate, polyacetal, polyamide, polycarbonate, polyphenylene ether, and Butylene phthalate, ultra-high molecular weight polyethylene, parapolystyrene, polyarylate, polysulfide, polyether sulfide, polyphenylene sulfide, polyether ether ketone, polyimine, polyether imine , Fluorine resin, liquid crystal polymer, etc. Among them, in terms of excellent heat resistance, polyimide, polyethylene terephthalate, and polyethylene naphthalate are preferred.

The thickness of the substrate of the temporary fixing tape is not particularly limited, and the preferred lower limit is 5 μm, and the preferred upper limit is 200 μm. When the thickness of the base material of the temporary fixing tape is within the above range, a temporary fixing tape with appropriate plasticity and excellent usability can be made. The lower limit of the thickness of the base material of the temporary fixing tape is more preferably 10 μm, and the upper limit is more preferably 150 μm.

The commercially available products of the aforementioned temporary fixing tape are not particularly limited, and examples include Kapton (registered trademark) adhesive tape 650R#50 (manufactured by TERAOKA) and the like.

In the manufacturing method of the semiconductor device of the present invention, it is preferable to proceed to step (2): on the temporary fixing tape, a metal film is formed on the back and side surfaces of the semiconductor package to which the adhesive tape for semiconductor processing is attached. The method of forming the above-mentioned metal film is not particularly limited, and for example, a method of forming a film made of stainless steel, titanium, aluminum, etc. by sputtering or the like can be mentioned.

By performing the above step (1) and the above step (2), the following semiconductor processing laminate can be obtained. The semiconductor processing laminate is: a semiconductor package to which the adhesive tape for semiconductor processing is attached is The side contact of the adhesive tape for processing is laminated on the temporary fixing tape, and a metal film is formed on the back and side surfaces of the semiconductor package to which the adhesive tape for semiconductor processing is attached. In the manufacturing method of the semiconductor device of the present invention, the following step (3) is carried out: in the laminated body for semiconductor processing, the semiconductor package with the metal film formed on the back and side surfaces is picked up from the adhesive tape for semiconductor processing. Thereby, a semiconductor package with a metal film formed on the back and side surfaces can be obtained.

In the above step (3), the semiconductor package with the metal film formed on the back surface and the side surface is picked up in a state _{heated to a temperature T 1 that satisfies the following formula (1).} 100＜{Fb(T ₁ )/Fa(T ₁ )} (1) In formula (1), Fa(t) represents the peeling force of the adhesive tape for semiconductor processing at the temperature t to the copper plate, Fa(T ₁ ) represents Fa(t) is _{the value at temperature t=T 1} , Fb(t) represents the peeling force of the temporary fixing tape at temperature t to the adhesive tape for semiconductor processing, Fb(T ₁ ) represents Fb(t) at temperature t=T The value of _1. Furthermore, when the adhesive tape for semiconductor processing is a single-sided support type, Fb(t) represents the peeling force of the temporary fixing tape at temperature t to the back of the substrate of the adhesive tape for semiconductor processing.

The above Fa(t) is an index representing the "adhesive force of the adhesive tape for semiconductor processing to the adherend (standard copper plate) at temperature t". The above Fb(t) means "adhesion of the temporary fixing tape at temperature t to the adhesive tape for semiconductor processing" (when the adhesive tape for semiconductor processing is a single-sided support type, the temporary fixing tape at temperature t is for the semiconductor The index of the adhesiveness of the back of the substrate of the adhesive tape for processing). These adhesive forces will all decrease due to heating, and the degree of decrease is different. Compared with the above Fb(t), the above Fa(t) has a tendency to greatly decrease due to heating. That is, the above-mentioned Fb(t)/Fa(t) tends to increase as t increases. In the above step (3), by picking up the semiconductor package in a state where the above-mentioned Fb(t)/Fa(t) is heated to a temperature within the above-mentioned range, the above-mentioned Fb(t) can be significantly reduced compared with the above-mentioned Fb(t). Fa(t). Thereby, peeling at the interface between the temporary fixing tape and the adhesive tape for semiconductor processing can be suppressed, and the semiconductor package can be picked up well. Furthermore, the so-called standard copper plate refers to a copper plate that meets JIS H3100: 2018 (for example, C1100P, manufactured by Engineering Test Service).

In the above step (3), it is only necessary to pick up the semiconductor package in a state where the Fb(t)/Fa(t) is heated to a temperature within the above range (that is, more than 100), and it is preferably heated to The semiconductor package is picked up in a state where the above-mentioned Fb(t)/Fa(t) becomes a temperature of 103 or higher. Furthermore, it is more preferable to pick up the semiconductor package in a state heated to a temperature of 150 or more for the above-mentioned Fb(t)/Fa(t). Furthermore, it is more preferable to pick up the semiconductor package in a state where it is heated to a temperature of 200 or more for the above-mentioned Fb(t)/Fa(t). The upper limit of the above-mentioned Fb(t)/Fa(t) is not particularly limited, and the substantial upper limit is, for example, 1500, and the more preferable upper limit is 750.

The value of Fa(t) at temperature T ₁ (Fa(T ₁ )) is not particularly limited, and the preferred lower limit is 0.001 N/inch, and the preferred upper limit is 0.5 N/inch. With the Fa(T ₁ ) in the above range, the semiconductor package can be picked up more satisfactorily. A more preferable lower limit of Fa(T ₁ ) is 0.005 N/inch, a still more preferable lower limit is 0.01 N/inch, a more preferable upper limit is 0.1 N/inch, and a more preferable upper limit is 0.07 N/inch.

The value of Fb(t) at temperature T ₁ (Fb(T ₁ )) is not particularly limited. The lower limit is preferably 1 N/inch, the lower limit is more preferably 5 N/inch, and the lower limit is more preferably 10 N/inch. , And a more preferable lower limit is 15 N/inch. Since the Fb (T ₁ ) is more than the lower limit, the semiconductor package can be picked up more satisfactorily. The upper limit of the value of Fb(t) at temperature T _{1 (Fb(T 1} )) is not particularly limited. The actual upper limit is, for example, 50 N/inch, and a more preferable upper limit is 20 N/inch.

The value of Fa(t) at 23°C (Fa(23°C)) is not particularly limited, and the preferred lower limit is 0.04 N/inch, and the preferred upper limit is 1.5 N/inch. When the Fa (23°C) is within the above range, it is easy to adjust the Fb(t)/Fa(t), and the semiconductor package can be picked up more satisfactorily. The better lower limit of the above Fa (23°C) is 0.1 N/inch, and the better upper limit is 1 N/inch.

The value of Fb(t) at 23°C (Fb(23°C)) is not particularly limited, and the preferred lower limit is 3 N/inch, and the preferred upper limit is 30 N/inch. With the above-mentioned Fb (23°C) in the above-mentioned range, it is easy to adjust the above-mentioned Fb(t)/Fa(t), and the semiconductor package can be picked up more satisfactorily. The lower limit of the above Fb (23°C) is more preferably 5 N/inch, and the more preferable upper limit is 7 N/inch.

The specific value of the above temperature T ₁ is not particularly limited. If considering the normal temperature during pickup of the semiconductor package, the preferred lower limit is 25°C, the preferred upper limit is 200°C, the more preferred lower limit is 50°C, and the more preferred upper limit It is 150°C. The method of picking up the semiconductor package in the state heated to the above temperature T ₁ is not particularly limited. For example, a method of picking up the semiconductor package while heating to temperature T ₁ by blowing hot air using a die bonding device; heating to temperature After T _{1 is} over, the method of picking up while keeping the temperature T _{1 and so on.}

As a measuring method of said Fa(t), the following methods are mentioned, for example. First, the above-mentioned adhesive tape for semiconductor processing is placed on the copper plate in such a way that the adhesive layer is opposed to a copper plate that meets JIS H3100:2018 (for example, C1100P, manufactured by Engineering Test Service). A 2 kg rubber roller was reciprocated once at a speed of 600 mm/min to bond the above-mentioned adhesive tape for semiconductor processing to the copper plate. While measuring the temperature of the back surface (substrate side) of the adhesive tape for semiconductor processing using a temperature measuring sensor (such as A-231K-01-1-TC1-ANP manufactured by Anritsu Keiki Co., Ltd.), the laminate is heated. Using an auto-stereograph (manufactured by Shimadzu Corporation), the above-mentioned adhesive tape for semiconductor processing of the laminated body heated to temperature t is stretched along 180° at a temperature of t and a humidity of 50% at a stretching speed of 300 mm/min Peel off in the direction and measure the peel force. Furthermore, the copper plate to be adhered as the adhesive tape for semiconductor processing refers to the copper plate that meets JIS H3100:2018 (such as C1100P, manufactured by Engineering Test Service), and is selected assuming the circuit surface of the semiconductor package.

As a measuring method of said Fb(t), the following methods are mentioned, for example. First, the adhesive layer of the above-mentioned adhesive tape for semiconductor processing is opposed to the copper plate (C1100P), and the double-sided tape (double-sided tape 560 manufactured by Sekisui Chemical Co., Ltd., or its equivalent) is used for bonding. The temporary fixing tape is placed on the adhesive tape for semiconductor processing so that the adhesive layer faces the back surface of the base material of the adhesive tape for semiconductor processing. A 2 kg rubber roller is reciprocated once at a speed of 300 mm/min to bond the temporary fixing tape and the adhesive tape for semiconductor processing. While measuring the temperature of the back surface (substrate side) of the temporary fixing tape with a temperature measuring sensor (such as A-231K-01-1-TC1-ANP manufactured by Anritsu Keiki Co., Ltd.), the laminate is heated. Using an auto-stereograph (manufactured by Shimadzu Corporation), the above-mentioned temporary fixing tape of the laminated body heated to temperature t is placed in an environment of temperature t and relative humidity of 50% at a stretching speed of 300 mm/min along the direction of 180° Peel off, and measure the peel force. The Fb(t)/Fa(t) can be calculated from the obtained Fa(t) and Fb(t).

When the adhesive layer of the adhesive tape for semiconductor processing is a light-curing adhesive layer, the Fa(t) is after the adhesive tape for semiconductor processing is attached to a copper plate and before heating to temperature t, The adhesive layer of the adhesive tape for semiconductor processing is irradiated with light to harden the adhesive layer and then measured. As a method of irradiating light to the adhesive layer of the adhesive tape for semiconductor processing, for example, the following method is used: an ultra-high pressure mercury ultraviolet irradiator is used, and the adhesive is applied from the substrate side ^{so that the cumulative intensity becomes 2500 mJ/cm 2} The layer is irradiated with 405 nm ultraviolet rays. The irradiation intensity at this time is not particularly limited, but is preferably 50-100 mW/cm ² .

In order to adjust the aforementioned Fb(t)/Fa(t), it is only necessary to adjust the respective specific values of the aforementioned Fa(t) and the aforementioned Fb(t). As a method of adjusting the Fa(t), in addition to the method of adjusting the temperature t, for example, a method of adjusting the type, composition, physical properties, etc. of the adhesive layer of the adhesive tape for semiconductor processing as described above. As a method of adjusting the above-mentioned Fb(t) to the above-mentioned range, in addition to the method of adjusting the temperature t, for example, a method of adjusting the type, composition, physical properties, etc. of the substrate of the adhesive tape for semiconductor processing as described above ; On the surface of the substrate on the side opposite to the adhesive layer of the adhesive tape for semiconductor processing, that is, on the back side, a method of forming an easy-to-adhesive layer as described above. In addition, a method of adjusting the type, composition, and physical properties of the adhesive layer of the temporary fixing tape can also be cited.

FIG. 1 shows a diagram schematically showing an example of a method of manufacturing a semiconductor device of the present invention. Hereinafter, the manufacturing method of the semiconductor device of the present invention will be described with reference to FIG. 1. Furthermore, in FIG. 1, the adhesive tape 2 for semiconductor processing is a single-sided support type having a substrate 2b and an adhesive layer 2a laminated on one side of the substrate 2b. However, it is used in the manufacturing method of the semiconductor device of the present invention Among them, the adhesive tape 2 for semiconductor processing may be an unsupported type without the base material 2b.

In the manufacturing method of the semiconductor device of the present invention, first, as shown in FIG. 1(a), the step (1-1) of attaching the adhesive tape 2 for semiconductor processing to the circuit surface of the semiconductor package 4 can be performed. When the adhesive layer of the adhesive tape for semiconductor processing is a light-curing adhesive layer, it is preferable to irradiate the adhesive layer of the adhesive tape for semiconductor processing after the above step (1-1) Steps of Light (1-3) (not shown). In the manufacturing method of the semiconductor device of the present invention, then, as shown in FIG. 1(b), the following steps (1-2) can be performed: the semiconductor package 4 to which the adhesive tape 2 for semiconductor processing is attached is cut to obtain The singulated semiconductor package 4 with the adhesive tape 2 for semiconductor processing attached.

In the manufacturing method of the semiconductor device of the present invention, then, as shown in FIG. 1(c), the following step (1) can be performed: the semiconductor package 4 to which the adhesive tape 2 for semiconductor processing is attached is used for semiconductor processing The tape 2 is temporarily fixed to the temporary fixing tape 3 in a way that the side of the tape 2 contacts.

In the manufacturing method of the semiconductor device of the present invention, then, as shown in FIG. 1(d), the following step (2) can be performed: on the temporary fixing tape 3, the semiconductor package with the adhesive tape 2 for semiconductor processing attached A metal film 5 is formed on the back and side surfaces of the body 4.

By performing the steps shown in Figure 1 (a) to Figure 1 (d), the following semiconductor processing laminate can be obtained, which is a semiconductor package 4 to which the adhesive tape 2 for semiconductor processing is attached. The side contact of the tape 2 is laminated on the temporary fixing tape 3, and a metal film 5 is formed on the back and side surfaces of the semiconductor package 4 to which the adhesive tape 2 for semiconductor processing is attached. In the manufacturing method of the semiconductor device of the present invention, in such a laminated body for semiconductor processing, as shown in FIG. Package 4 step (3). Thereby, a semiconductor package with a metal film formed on the back and side surfaces can be obtained. In the above step (3), the semiconductor package with the metal film formed on the back surface and the side surface is picked up in a state _{heated to a temperature T 1 that satisfies the following formula (1).} 100＜{Fb(T ₁ )/Fa(T ₁ )} (1) In formula (1), Fa(t) represents the peeling force of the adhesive tape for semiconductor processing at the temperature t to the copper plate, Fa(T ₁ ) represents Fa(t) is _{the value at temperature t=T 1} , Fb(t) represents the peeling force of the temporary fixing tape at temperature t to the adhesive tape for semiconductor processing, Fb(T ₁ ) represents Fb(t) at temperature t=T The value of _1.

The laminated body for semiconductor processing, which is an intermediate product of the method of manufacturing a semiconductor device of the present invention, is also one of the present invention.

The laminated system for semiconductor processing of the present invention laminates the semiconductor package with the adhesive tape for semiconductor processing on the temporary fixing tape in such a way that the side of the adhesive tape for semiconductor processing is in contact, and the temperature is within the range of 25 to 200°C _{, Has a temperature T 2} that satisfies the following formula (1'). 100＜{Fb(T ₂ )/Fa(T ₂ )} (1') In the formula (1'), Fa(t) represents the peeling force of the adhesive tape for semiconductor processing to the copper plate at the temperature t, Fa(T ₂ ) represents Fa of the (t) at temperature t = T ₂ of values, Fb (t) represented in the temporary fixing tape temperature t of the semiconductor processing peel force adhesive tape of, Fb (T ₂₎ represented by Fb (t) at temperature t = The value of _{T 2.}

The lower limit of the specific value of the temperature T ₂ is 25°C, and the upper limit is 200°C. Regarding the specific value of the aforementioned temperature T ₂ , considering the normal temperature during pickup of the semiconductor package, the preferred lower limit is 50° C., and the preferred upper limit is 150° C.

The laminated body for semiconductor processing of the present invention can further form a metal film on the back and side surfaces of the semiconductor package to which the adhesive tape for semiconductor processing is attached. [Effects of Invention]

According to the present invention, it is possible to provide a method for manufacturing a semiconductor device and a laminated body for semiconductor processing that can suppress peeling at the interface between the temporary fixing tape and the adhesive tape for semiconductor processing, and perform picking up of semiconductor packages well.

The following examples illustrate the aspects of the present invention in more detail, but the present invention is not limited to these examples.

(Example 1) (1) Synthesis of adhesive polymer Prepare a reactor equipped with a thermometer, agitator, and condenser. To the reactor were added 93 parts by weight of 2-ethylhexyl acrylate as alkyl (meth)acrylate, 1 part by weight of acrylic acid as a monomer containing functional groups, 6 parts by weight of hydroxyethyl methacrylate, After 0.01 parts by weight of lauryl mercaptan and 80 parts by weight of ethyl acetate, the reactor was heated and reflux was started. Then, 0.01 parts by weight of 1,1-bis(third hexylperoxy)-3,3,5-trimethylcyclohexane as a polymerization initiator was added to the above-mentioned reactor, and polymerization was started under reflux. Secondly, after 1 hour and 2 hours from the start of the polymerization, 0.01 parts by weight of 1,1-bis(tertiary hexylperoxy)-3,3,5-trimethylcyclohexane were also added, and further, self-polymerization After 4 hours from the start, 0.05 parts by weight of third hexyl peroxide pivalate was added to continue the polymerization reaction. And 8 hours after the start of the polymerization, an ethyl acetate solution of a functional group-containing (meth)acrylic polymer with a solid content of 55% by weight and a weight average molecular weight of 600,000 was obtained. With respect to 100 parts by weight of the resin solid content of the ethyl acetate solution containing the functional group-containing (meth)acrylic polymer, 3.5 parts by weight of 2-isocyanatoethyl methacrylate were added and reacted to obtain adhesion性polymers.

(2) Manufacturing of adhesive tape for semiconductor processing With respect to 100 parts by weight of the resin solid content of the ethyl acetate solution of the adhesive polymer obtained in the above, 1 part by weight of polysiloxane compound, 3 parts by weight of inorganic filler, and 10 parts by weight of urethane acrylate are added , 0.2 parts by weight of crosslinking agent and 1 part by weight of photopolymerization initiator are mixed at a stirring speed of 100 rpm to obtain an adhesive solution. Next, on the release-treated surface of the polyethylene terephthalate film with the release-treated surface, apply the adhesive solution with a doctor blade so that the thickness after drying becomes 40 μm, and heat and dry at 105°C for 5 Minutes to obtain the adhesive layer. The obtained adhesive layer was bonded to the corona-treated surface of the substrate A on which one side was corona-treated, and cured at 40°C for 6 days, thereby obtaining an adhesive tape for semiconductor processing.

In addition, the following are used for the base material A, polysiloxane compound, inorganic filler, urethane acrylate, crosslinking agent, and photopolymerization initiator. Substrate A (polyethylene terephthalate, G'=1.7×10 ⁹ Pa, bending stiffness per unit width=1.8×10 ^-5 N·m ² /m, thickness=50 μm) Polysiloxane (EBECRYL350, manufactured by Daicel Cytec) Inorganic filler (silica filler, REOLOSIL MT-10, manufactured by Tokuyama Chemical Co., Ltd.) Amino acrylate (UN-5500, manufactured by Negami Kogyo Co., Ltd.) Crosslinking agent (isocyanate-based crosslinking agent, Coronate L, manufactured by Nippon Polyurethane Industry Corporation) Photopolymerization initiator (Irgacure369, manufactured by BASF Corporation)

(3) Measurement of the storage elastic modulus G'of the adhesive layer. In the same way as the manufacturing of the adhesive tape for semiconductor processing, a measurement sample composed of only the adhesive layer is made. Use the measurement sample to make a short strip test piece with a width of 10 mm. Using an ultra-high pressure mercury ultraviolet irradiator to achieve a cumulative intensity of 2500 mJ/cm ² , irradiate 405 nm ultraviolet rays from the release film side of the test piece to the adhesive layer to harden the adhesive layer. For the cured test piece, remove the release film on both sides, and then use a viscoelastic spectrometer (DVA-200, IT Meter. and Control, Inc.), in a constant-rate heating and stretching mode, at a heating rate of 10°C Measured under the conditions of /min and frequency of 10 Hz. Record the storage elastic modulus at 23°C at this time as the storage elastic modulus of the adhesive layer.

(4) For the measurement of Fa (23°C) and Fa (T ₁ ), ethanol is used to clean the surface of a copper plate with a thickness of 1 mm (copper plate meeting JIS H3100:2018, C1100P, manufactured by Engineering Test Service) and make it fully dry. A 2 kg roller was reciprocated once, and the adhesive tape for semiconductor processing cut into a width of 25 mm and a length of 10 cm was attached to the copper plate to obtain a laminate. An ultra-high pressure mercury ultraviolet irradiator was used to irradiate 405 nm ultraviolet rays from the substrate side to the adhesive layer for 25 seconds to harden the adhesive layer. The illuminance is adjusted so that the irradiation intensity becomes 100 mW/cm ^2. After that, in _{the measurement of Fa(T 1} ), the laminate was heated in an oven preheated to the temperature T _{1 shown in Table 1.} While measuring the temperature of the back surface (substrate side) of the adhesive tape for semiconductor processing with a temperature measuring sensor (manufactured by Anritsu Keiki Co., Ltd., A-231K-01-1-TC1-ANP), the laminate is heated to temperature T ₁ . Using an auto-stereograph (manufactured by Shimadzu Corporation), apply the adhesive tape for semiconductor processing of the laminate in an environment with a temperature of 23°C or a temperature of T ₁ and a humidity of 50% at a stretching speed of 300 mm/min along a direction of 180° Peel off, and measure the peel force Fa (23°C) and Fa (T ₁ ).

(5) Manufacture of temporary fixing tape To obtain 100 parts by weight of the resin solid content of the ethyl acetate solution of the adhesive polymer obtained above, add 10 parts by weight of urethane acrylate and 0.5 parts by weight of crosslinking agent, and mix at a stirring speed of 100 rpm to obtain Adhesive solution. Then, on the release-treated surface of the polyethylene terephthalate film with the release-treated surface, apply the adhesive solution with a spatula so that the thickness after drying becomes 5 μm, and heat and dry it at 105°C for 5 Minutes to obtain the adhesive layer. The obtained adhesive layer was bonded to the corona-treated surface of the corona-treated substrate A on one side, and cured at 40°C for 6 days, thereby obtaining a temporary fixing tape. The adhesion of the temporary fixing tape to the copper plate (copper plate meeting JIS H3100: 2018, C1100P, manufactured by Engineering Test Service) was measured, and the result was 6.5 N/inch.

(6) Measurement of Fb (23°C) and Fb (T ₁ ) In the manufacture of adhesive tapes for semiconductor processing, the surface of the substrate before the adhesive layer (the surface on the side where the adhesive layer is formed) is double-sided The tape (double-sided tape 560 manufactured by Sekisui Chemical Co., Ltd.) is attached to the copper plate (C1100P). A 2 kg roller was reciprocated once and a temporary fixing tape cut into a width of 25 mm and a length of 10 cm was attached to the back of the substrate (the surface on the side where the adhesive layer was not formed) to obtain a laminate. After that, in _{the measurement of Fb (T 1} ), the laminate was heated in an oven preheated to the temperature T _{1 shown in Table 1.} While measuring the temperature of the back side of the temporarily fixed tape (the substrate side of the temporarily fixed tape) with a temperature measuring sensor (manufactured by Anritsu Keiki Co., Ltd., A-231K-01-1-TC1-ANP), the laminate is heated to Temperature T ₁ . Use an auto-stereograph (manufactured by Shimadzu Corporation) to _{peel off the temporary fixing tape of the laminate along the 180° direction at a temperature of 23°C or a temperature of T 1} , and a humidity of 50% at a stretching speed of 300 mm/min. Measure the peeling force Fb (23°C) and Fb (T ₁ ).

(7) Measurement of PU force and PU force at temperature T ₁ Attach the dicing tape to the back side (substrate side) of the adhesive tape for semiconductor processing, and use a roller to paste the adhesive layer side into a piece of 10 mm× 10 mm substrate. Using a desktop tensile compression tester (MCT-2150, manufactured by A&D), peel off the singulated substrate from the back side (substrate side) of the adhesive tape for semiconductor processing, and pick it up. Measure the force required to peel off the singulated substrate and set it as the PU force (pick up force). Power on temperature T of the PU _1, the substrate to be diced after it attached to the semiconductor processing adhesive tape, using an oven preheated to a temperature T ₁ of the layered product was subjected to heat treatment. Use a temperature sensor (manufactured by Anritsu Keiki Co., Ltd., A-231K-01-1-TC1-ANP) to measure the temperature of the back surface (substrate side) of the adhesive tape for semiconductor processing, and heat the laminate to temperature T ₁ picking up in the same manner under the state, and a measurement temperature T PU force of _1.

(8) The manufacturing of the semiconductor device is as follows, and each step shown in (a1) to (a4) of Fig. 2 is performed. The adhesive tape 2 for semiconductor processing is attached to the surface of the copper foil 7a of the copper-clad laminated substrate 7 (manufactured by Mitsubishi Gas Chemical Corporation, CCL-EL190T/GEPL-190T) (Figure 2(a1)). An ultra-high pressure mercury ultraviolet irradiator was used to irradiate ultraviolet rays of 405 nm to the adhesive layer 2a from the side of the substrate 2b for 25 seconds to harden the adhesive layer 2a. The illuminance is adjusted so that the irradiation intensity becomes 100 mW/cm ^2. Temporarily fix the copper-clad laminate substrate 7 with the adhesive tape 2 for semiconductor processing attached to the dicing tape 8 (manufactured by Denka, ELEGRIP UPH-1510M4) with the copper-clad laminate substrate 7 side in contact, and install it on the dicing frame 9 (Figure 2(a2)). Using a dicing device (manufactured by DISCO, DFD6361), the copper-clad laminated substrate 7 with the adhesive tape 2 for semiconductor processing attached to it was singulated (wafered) into a 10 mm square (Figure 2(a3)).

An ultra-high pressure mercury ultraviolet irradiator is used to irradiate 405 nm ultraviolet rays so that the ^{cumulative intensity becomes 2500 mJ/cm 2 to harden the dicing tape 8.} Adjust the illuminance so that the irradiation intensity becomes 50 mW/cm ^2. After that, the dicing tape 8 is peeled off. The singulated copper-clad laminate substrate 7 to which the adhesive tape 2 for semiconductor processing is attached is temporarily fixed to the temporary fixing tape 3 with the adhesive tape 2 for semiconductor processing in contact with the side of the adhesive tape 2 for semiconductor processing, and then reinstalled on the dicing frame 9 (Figure 2(a4)). Using an oven heated in advance to 150° C., the singulated copper-clad laminated substrate 7 with the adhesive tape 2 for semiconductor processing attached together with the dicing frame 9 is subjected to heat treatment for 1 hour. Furthermore, the so-called "heating at 150°C for 1 hour" is set assuming the temperature and time required for the shielding treatment of the semiconductor package. After a certain period of time, the singulated copper-clad laminate substrate 7 attached with the adhesive tape 2 for semiconductor processing together with the dicing frame 9 is taken out, and placed in an environment with a temperature of 23° C. and a relative humidity of 50% to cool sufficiently. Using sticky crystal device (manufactured by Canon Machinery Corporation, BestemD02), hot air is blown to one side by way of heating to a temperature T ₁ is heated to the temperature shown in Table ₁ T 1, after the singulation one side copper clad laminate substrate 7 The pickup.

(Examples 2 to 8, Reference Examples 1 to 5) The composition and base material of the adhesive layer were changed as described in Table 1, except that in the same manner as in Example 1, an adhesive tape for semiconductor processing and Temporarily fix the tape. Various physical properties were measured in the same manner as in Example 1, and a semiconductor device was manufactured. Base material B (polyethylene terephthalate, G'=1.7×10 ⁹ Pa, bending stiffness per unit width=1.4×10 ^-4 N·m ² /m, thickness=100 μm) Base material C ( Polyethylene terephthalate, G'=1.7×10 ⁹ Pa, bending stiffness per unit width=2.2×10 ^-6 N·m ² /m, thickness=25 μm)

＜Evaluation＞ The adhesive tape for semiconductor processing, the temporary fixing tape, and the manufacturing method of the semiconductor device in the Examples and Reference Examples were evaluated by the following methods. The results are shown in Table 1.

(1) Pickup evaluation (1-1) The peeling of the interface between the semiconductor package and the adhesive tape is _{judged as A if the pick-up force of temperature T 1} is less than 1 N, and if the pick-up force is 1 N or more and less than 5 N, it is judged as B, the case where 5 N or more and less than 10 N is judged as C, and the case where 10 N or more (the substrate is not peeled off after singulation) is judged as D.

(1-2) The adhesion of the temporary fixing tape to the back of the adhesive tape In the manufacture of the semiconductor device described in (8) above, when picking up the singulated copper-clad laminated substrate 7, the interface between the back surface (substrate side) of the adhesive tape 2 for semiconductor processing and the temporary fixing tape 3 The peeling is judged. The case where there is no peeling at the above interface is judged as A; the case where there is a peeled part but less than half of the total area at the above interface is judged as B; the peeling part is at the above interface and exceeds half of the total area, However, the case where it was not completely peeled off was judged as C; the case where the adhesive tape 2 for semiconductor processing was completely peeled off from the temporary fixing tape 3 was judged as D.

(2) Evaluation of other steps (other than picking) In the manufacturing of the semiconductor device of (8) above, 50 pieces of the copper-clad laminate substrate 7 after singulation (chip-forming) were randomly selected, and the difference between the copper-clad laminate substrate 7 and the adhesive tape 2 for semiconductor processing was observed with an optical microscope At the interface, the presence or absence of end peeling was observed, and the cutting peeling was evaluated by the following criteria. Among 50 samples, the case where there is no end peeling of a sample of 300 μm or more is judged as A, and the case where the number of samples with an end peeling of 300 μm or more is less than 5% is judged as B, and the end is peeled off the sample of 300 μm or more. If the number is 5% or more, it is judged as C. Furthermore, if the peeling at the end is less than 300 μm, the metal inflow during sputtering will be less and the yield will be improved.

[Table 1] Example Reference example 1 2 3 4 5 6 7 8 1 2 3 4 5 Heating temperature T ₁ (℃) 50 50 100 100 100 100 100 150 twenty three twenty three twenty three 50 32 Peeling force of adhesive tape to copper plate at 23℃···Fa (23℃) (N/inch) 0.1 0.1 0.1 0.1 0.5 0.5 1.0 1.0 0.1 1.0 1.0 0.5 0.1 The peeling force of the temporary fixing tape at 23℃ to the back of the adhesive tape··· Fb (23℃) (N/inch) 5.0 5.0 5.0 5.0 15 15 30 30 5.0 5.0 50.0 15 5.0 Peeling force of adhesive tape to copper plate at temperature T _{1 ···Fa (T 1} ) (N/inch) 0.0376 0.0376 0.0064 0.0064 0.0320 0.0320 0.0640 0.0320 0.100 1.0 1.0 0.1880 0.0680 The peeling force of the temporary fixing tape to the back of the adhesive tape at temperature T _{1 ··· Fb (T 1} ) (N/inch) 3.89 3.89 1.64 1.64 4.91 4.91 9.81 6.54 5.00 5.00 50.00 11.66 4.60 Fb(T ₁ )/Fa(T ₁ ) 103 103 255 255 153 153 153 204 50 5 50 62 67.6 Temporarily fix the tape Adhesive layer (parts by weight) Adhesive polymer 100 100 100 100 100 100 100 100 100 100 100 100 100 Amino acrylate 10 10 10 10 10 10 10 10 10 10 5 10 10 Inorganic filler 0 0 0 0 0 0 10 10 0 0 10 0 0 Crosslinking agent 0.5 0.5 0.5 0.5 0.2 0.2 0.2 0.2 0.5 0.5 0.2 0.2 0.5 Substrate Substrate A Substrate A Substrate A Substrate A Substrate A Substrate A Substrate A Substrate A Substrate A Substrate A Substrate A Substrate A Substrate A Adhesion to copper plate (N/inch) 6.5 6.5 6.5 6.5 17.0 17.0 33.5 33.5 6.5 6.5 55.0 17.0 6.5 Adhesive tape Adhesive layer (parts by weight) Adhesive polymer 100 100 100 100 100 100 100 100 100 100 100 100 100 Polysiloxane 1 1 1 1 0.1 0.1 0 0 1 0 0 0.1 1 Amino acrylate 10 30 10 10 10 10 10 10 10 10 10 10 10 Inorganic filler 3 3 3 3 3 3 3 3 3 3 3 3 3 Crosslinking agent 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Photopolymerization initiator 1 0.5 1 1 1 1 1 1 1 1 1 1 1 Substrate Substrate A Substrate A Substrate A Substrate B Substrate A Substrate C Substrate A Substrate A Substrate A Substrate A Substrate A Substrate A Substrate A Adhesive modulus of elasticity (Pa) 1.7×10 ⁷ 8.5×10 ⁶ 1.7×10 ⁷ 1.7×10 ⁷ 1.7×10 ⁷ 1.7×10 ⁷ 1.7×10 ⁷ 1.7×10 ⁷ 1.7×10 ⁷ 1.7×10 ⁷ 1.7×10 ⁷ 1.7×10 ⁷ 1.7×10 ⁷ Bending stiffness per unit width of base material (N·m ² /m) 1.8 × 10 ^{- 5} 1.8 × 10 ^{- 5} 1.8×10 ^-5 1.4×10 ^-4 1.8×10 ^-5 2.2×10 ^-6 1.8×10 ^-5 1.8×10 ^-5 1.8×10 ^-5 1.8×10 ^-5 1.8×10 ^-5 1.8×10 ^-5 1.8×10 ^-5 PU force (N) 14.8 9.9 14.8 20.6 73.0 102.0 147 147 14.8 147 147 73.0 14.8 PU force at temperature T ₁ (N) 5.6 3.7 0.9 1.3 4.7 6.5 9.4 4.7 14.8 147 147 27.4 10.1 Pick up evaluation Delamination of the interface between the semiconductor package and the adhesive tape C B A B B C C B D D D D D Temporarily fixing the adhesiveness of the adhesive tape to the back of the adhesive tape C C B C C B B B D D C D C Evaluation of other steps (other than picking) C C C B B C A A C A A B C [Industrial availability]

According to the present invention, it is possible to provide a method for manufacturing a semiconductor device and a laminated body for semiconductor processing that can suppress peeling at the interface between the temporary fixing tape and the adhesive tape for semiconductor processing, and perform picking up of semiconductor packages well.

2: Adhesive tape for semiconductor processing 2a: Adhesive layer 2b: Substrate 3: Temporarily fix the tape 4: Semiconductor package 5: Metal film 6: Pick up the needle 7: Copper-clad laminate substrate 7a: Copper foil 8: Cutting tape 9: cutting box

[FIG. 1] (a) to (e) are diagrams schematically showing an example of a method of manufacturing a semiconductor device of the present invention. [FIG. 2] (a1) to (a4) are diagrams schematically showing the steps of the manufacturing method of the semiconductor device in the embodiment and the reference example.

2: Adhesive tape for semiconductor processing

2a: Adhesive layer

2b: Substrate

3: Temporarily fix the tape

4: Semiconductor package

5: Metal film

6: Pick up the needle

Fa(t): The peeling force of the adhesive tape for semiconductor processing to the copper plate at temperature t

Fb(t): The peeling force of the temporary fixing tape at the temperature t to the adhesive tape for semiconductor processing

Claims (10)

A method of manufacturing a semiconductor device, characterized in that it has the following step (3): picking up a semiconductor package with a metal film formed on the back and side surfaces from an adhesive tape for semiconductor processing in the following semiconductor processing laminate, the semiconductor The build-up system for processing makes the semiconductor package attached with the adhesive tape for semiconductor processing laminated on the temporary fixing tape in such a way that the side of the adhesive tape for semiconductor processing is in contact, and is applied to the semiconductor package with the adhesive tape for semiconductor processing attached Metal films are formed on the back and side surfaces of the body; and in the above step (3), the semiconductor package with the metal films formed on the back and side surfaces is picked up under the state of being _{heated to a temperature T 1 that satisfies the following formula (1)} , 100＜{Fb(T ₁ )/Fa(T ₁ )} (1) In formula (1), Fa(t) represents the peeling force of the adhesive tape for semiconductor processing to the copper plate at temperature t, Fa(T ₁ ) Represents the value of Fa(t) at temperature t=T ₁ , Fb(t) represents the peeling force of the temporary fixing tape at temperature t to the adhesive tape for semiconductor processing, Fb(T ₁ ) represents Fb(t) at temperature t= The value of T _1. For example, in the method of manufacturing a semiconductor device of claim 1, before step (3), the following steps are performed: Step (1), which temporarily fixes the semiconductor package attached with the adhesive tape for semiconductor processing on the temporary fixing tape in the manner of contacting the side of the adhesive tape for semiconductor processing; and Step (2): forming a metal film on the temporary fixing tape on the back and side surfaces of the semiconductor package to which the adhesive tape for semiconductor processing is attached. For example, the method of manufacturing a semiconductor device of claim 1 or 2, wherein _{the value of Fa(t) at the temperature T 1} (Fa(T ₁ )) is 0.5 N/inch or less. The semiconductor device manufacturing method of 2 or 3, wherein the value of Fa(t) at 23°C (Fa(23°C)) is 0.04 N/inch or more. The manufacturing method of semiconductor device of 2, 3 or 4, wherein the value of Fb(t) at 23°C (Fb(23°C)) is 3 N/inch or more. The semiconductor device manufacturing method of 2, 3, 4, or 5, wherein _{the value of Fb(t) at temperature T 1} (Fb(T ₁ )) is 1 N/inch or more and 50 N/inch or less. The semiconductor device manufacturing method of 2, 3, 4, 5 or 6, wherein, before step (1), the following steps are performed: Step (1-1), attaching the adhesive tape for semiconductor processing to the circuit surface of the semiconductor package; and In step (1-2), the semiconductor package attached with the adhesive tape for semiconductor processing is cut to obtain a singulated semiconductor package attached with the adhesive tape for semiconductor processing. The method for manufacturing a semiconductor device according to claim 7, wherein the adhesive tape for semiconductor processing has a substrate and an adhesive layer laminated on at least one surface of the substrate, and the adhesive layer is a light-curing adhesive layer. The method for manufacturing a semiconductor device according to claim 8, wherein after step (1-1), the step (1-3) of irradiating light to the adhesive layer of the adhesive tape for semiconductor processing is performed. A laminated body for semiconductor processing, in which a semiconductor package attached with an adhesive tape for semiconductor processing is laminated on a temporary fixing tape in such a way that the side of the adhesive tape for semiconductor processing is in contact, and the temperature is in the range of 25 to 200°C _{, Has a temperature T 2} that satisfies the following formula (1'), 100＜{Fb(T ₂ )/Fa(T ₂ )} (1') In formula (1'), Fa(t) is expressed at temperature t The peeling force of the adhesive tape for semiconductor processing against the copper plate, Fa(T ₂ ) represents the value of Fa(t) at temperature t = T ₂ , and Fb(t) represents the difference between the temporary fixing tape at temperature t and the adhesive tape for semiconductor processing Peel force, Fb(T ₂ ) represents the value of Fb(t) at temperature t=T ₂ .

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