JP2019033214A - Manufacturing method of semiconductor device - Google Patents

Abstract

To provide a manufacturing method of a semiconductor device capable of suppressing poor pickup even in a semiconductor device having a large bump height.SOLUTION: A manufacturing method of a semiconductor device includes a protective tape lamination step of laminating a protective tape having a curable pressure-sensitive adhesive layer and a support layer on a surface on which a bump of a semiconductor device substrate having the bump is formed from the curable pressure-sensitive adhesive layer side to obtain a laminate and a curing step of curing the curable pressure-sensitive adhesive layer by applying stimulation to the protective tape while uniformly pressing the laminate.SELECTED DRAWING: Figure 2

Description

The present invention relates to a method of manufacturing a semiconductor device capable of suppressing pickup failure even in a semiconductor device having a large bump height.

In a semiconductor device manufacturing process, a protective tape is used to facilitate handling during wafer processing and to prevent damage. For example, when a thick film wafer cut out from a high-purity silicon single crystal or the like is ground to a predetermined thickness to form a thin film wafer, grinding is performed after a protective tape is bonded to the thick film wafer. (For example, Patent Document 1)

In recent semiconductor devices, bump connection is used to improve the reliability of electrical connection. In manufacturing a semiconductor device having such a bump, first, a protective tape is attached to the side of the semiconductor device substrate on which the bump is formed, and various processes are performed. Next, a dicing tape is affixed to the surface opposite to the surface on which the protective tape of the processed semiconductor device substrate is affixed, and the semiconductor device substrate is diced to obtain individual semiconductor devices. Then, after laminating the temporary fixing tape on the surface of the obtained semiconductor device with the protective tape, the dicing tape is peeled off, and the protective tape fixed to the temporary fixing tape and the temporary fixing tape is removed by a method such as needle pickup. The semiconductor device is picked up by peeling.

JP 2010-34379 A

In recent years, with the improvement in performance of semiconductor devices, semiconductor device substrates having bump heights of up to about 150 μm have been used. However, in the conventional semiconductor device manufacturing process, there is a problem that pickup failure occurs when the semiconductor device is picked up.

An object of the present invention is to provide a method of manufacturing a semiconductor device that can suppress pickup failure even in a semiconductor device having a large bump height.

In one embodiment of the present invention, a laminate is obtained by laminating a protective tape having a curable pressure-sensitive adhesive layer and a support layer from the curable pressure-sensitive adhesive layer side on the surface of the semiconductor device substrate having bumps formed on the bumps. There is provided a method for producing a semiconductor device, comprising: a protective tape laminating step to be obtained; and a curing step of curing the curable pressure-sensitive adhesive layer by applying a stimulus to the protective tape while uniformly pressing the laminate.
The present invention is described in detail below.

The present inventors have examined the cause of pickup failure when picking up a semiconductor device having high bumps. As a result, it has been found that the unevenness formed on the back surface of the protective tape is caused when the protective tape is applied to the semiconductor device substrate having high bumps. When the conventional protective tape is applied to the surface of the semiconductor device substrate having the bumps, the adhesive layer 11 'and the support layer 12 are deformed by the protrusions of the bumps 3 and chips of the semiconductor device substrate 2 as shown in FIG. The surface of the protective tape 1 on the support layer side (hereinafter referred to as the back surface) is uneven. When the temporary fixing tape 4 is pasted after dicing the semiconductor device substrate in such a state to form a semiconductor device, the temporary fixing tape 4 and the protective tape 1 are not completely adhered as shown in FIG. Occurs. In particular, in the part where the bump 3 is not present at the peripheral edge of the device, the surface of the protective tape is recessed compared to the inner part where the bump 3 is present, so that the peripheral edge is in a floating state. As a result, when the semiconductor device is picked up by the needle pickup, the gap between the protective tape 1 and the temporary fixing tape 4 that should have been originally bonded as shown in FIG. Pickup failure occurs where 2 'does not peel off. In addition, a semiconductor device having a high bump has a large surface unevenness, and the adhesive tape is bitten by the unevenness so that the protective tape and the semiconductor device are strongly bonded to each other, so that a peeling error is more likely to occur. As a result of further investigations from these findings, the present inventors have determined that the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer is a curable pressure-sensitive adhesive, and is cured while being uniformly pressed after being attached to the substrate, thereby producing high bumps. It has been found that even a semiconductor device having such a semiconductor device can be reliably picked up, and the present invention has been completed.

In the semiconductor device manufacturing method of the present invention, first, a protective tape having a curable pressure-sensitive adhesive layer and a support layer is laminated from the curable pressure-sensitive adhesive layer side on the surface of the semiconductor device substrate having bumps. A protective tape laminating step is performed.
By sticking a protective tape on the semiconductor device substrate, the handleability of the substrate can be improved and the substrate being processed can be protected. The present invention is effective even if any semiconductor device substrate is used. However, in the case of a semiconductor substrate having bumps with a height of 150 μm or more (especially 180 μm or more, especially 200 μm or more). In this method, pick-up failures frequently occur, so that the effect of the present invention is greatly exerted.

Examples of the curable pressure-sensitive adhesive constituting the curable pressure-sensitive adhesive layer include a photo-curable pressure-sensitive adhesive that is crosslinked and cured by light irradiation and a thermosetting pressure-sensitive adhesive that is crosslinked and cured by heating.
As said photocurable adhesive, the photocurable adhesive which has a polymeric polymer as a main component and used the photoinitiator as a polymerization initiator is mentioned, for example.
Examples of the thermosetting pressure-sensitive adhesive include a thermosetting pressure-sensitive adhesive that contains a polymerizable polymer as a main component and uses a thermal polymerization initiator as a polymerization initiator. The polymerizable polymer and the polymerization initiator may be used independently or two or more of them may be used in combination.

The polymerizable polymer is prepared by, for example, previously synthesizing a (meth) acrylic polymer having a functional group in the molecule (hereinafter referred to as a functional group-containing (meth) acrylic polymer) and reacting with the functional group in the molecule. It can be obtained by reacting a compound having a functional group and a radical polymerizable unsaturated bond (hereinafter referred to as a functional group-containing unsaturated compound).

The functional group-containing (meth) acrylic polymer is mainly composed of an acrylic acid alkyl ester and / or a methacrylic acid alkyl ester whose alkyl group usually has 2 to 18 carbon atoms, and this and a functional group-containing monomer, Further, it can be obtained by copolymerizing with other modifying monomers copolymerizable with these by a conventional method, if necessary. The weight average molecular weight of the functional group-containing (meth) acrylic polymer is usually about 200,000 to 2,000,000.

Examples of the functional group-containing monomer include carboxyl group-containing monomers such as acrylic acid and methacrylic acid, hydroxyl group-containing monomers such as hydroxyethyl acrylate and hydroxyethyl methacrylate, and epoxy such as glycidyl acrylate and glycidyl methacrylate. Examples thereof include group-containing monomers, isocyanate group-containing monomers such as isocyanate ethyl acrylate and isocyanate ethyl methacrylate, and amino group-containing monomers such as aminoethyl acrylate and aminoethyl methacrylate.

Examples of the other monomer that can be copolymerized include various monomers that are used for modifying general (meth) acrylic polymers such as vinyl acetate, acrylonitrile, and styrene.

The functional group-containing unsaturated compound to be reacted with the functional group-containing (meth) acrylic polymer is the same as the functional group-containing monomer described above according to the functional group of the functional group-containing (meth) acrylic polymer. it can. For example, when the functional group of the functional group-containing (meth) acrylic polymer is a carboxyl group, an epoxy group-containing monomer or an isocyanate group-containing monomer is used. When the functional group is a hydroxyl group, an isocyanate group-containing monomer is used. When the functional group is an epoxy group, a carboxyl group-containing monomer or an amide group-containing monomer such as acrylamide is used. When the functional group is an amino group, an epoxy group-containing monomer is used.

Examples of the photopolymerization initiator include those that are activated by irradiation with light having a wavelength of 250 to 800 nm. Examples of such photopolymerization initiators include acetophenone derivative compounds such as methoxyacetophenone, benzoin ether compounds such as benzoin propyl ether and benzoin isobutyl ether, ketal derivative compounds such as benzyldimethyl ketal and acetophenone diethyl ketal, Phosphine oxide derivative compound, bis (η5-cyclopentadienyl) titanocene derivative compound, benzophenone, Michler ketone, chlorothioxanthone, todecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenylpropane And photo radical polymerization initiators such as These photoinitiators may be used independently and 2 or more types may be used together.

Examples of the thermal polymerization initiator include those that decompose by heat and generate active radicals that initiate polymerization and curing. Examples of such thermal polymerization initiators include dicumyl peroxide, di-t-butyl peroxide, t-butyl peroxybenzoyl, t-butyl hydroperoxide, benzoyl peroxide, cumene hydroperoxide, and diisopropyl. Examples thereof include benzene hydroperoxide, paramentane hydroperoxide, and di-t-butyl peroxide.
However, in order for the curable pressure-sensitive adhesive to exhibit high heat resistance, it is preferable to use a thermal polymerization initiator having a thermal decomposition temperature of 200 ° C. or higher as the thermal polymerization initiator. Examples of such a thermal polymerization initiator having a high thermal decomposition temperature (for example, a thermal polymerization initiator having a thermal decomposition temperature of 200 ° C. or higher) include cumene hydroperoxide, paramentane hydroperoxide, and di-t-butyl. A peroxide etc. are mentioned.
Although it does not specifically limit as what is marketed among these thermal polymerization initiators, For example, perbutyl D, perbutyl H, perbutyl P, perpenta H (all are the NOF Corporation make) etc. are suitable. These thermal polymerization initiators may be used independently and 2 or more types may be used together.

The curable pressure-sensitive adhesive layer preferably contains a radical polymerizable polyfunctional oligomer or monomer. By containing a radically polymerizable polyfunctional oligomer or monomer, photocurability and thermosetting are improved.
The polyfunctional oligomer or monomer preferably has a molecular weight of 10,000 or less, and more preferably has a molecular weight of 5000 so that the three-dimensional network of the curable pressure-sensitive adhesive layer can be efficiently formed by heating or light irradiation. The number of radically polymerizable unsaturated bonds in the molecule is 2 to 20 below.

The polyfunctional oligomer or monomer is, for example, trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate or the same methacrylate as described above. And the like. Other examples include 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate, and methacrylates similar to those described above. These polyfunctional oligomers or monomers may be used alone or in combination of two or more.

The curable pressure-sensitive adhesive layer may contain a silicone compound having a functional group capable of crosslinking with the curable pressure-sensitive adhesive. Since the silicone compound is excellent in heat resistance, the adhesive is prevented from being burnt, etc. even after treatment with heating at 200 ° C. or higher, and at the time of peeling, it bleeds out to the adherend interface to facilitate peeling. When the silicone compound has a functional group capable of crosslinking with the curable pressure-sensitive adhesive, the functional group chemically reacts with the curable pressure-sensitive adhesive by light irradiation or heating and is incorporated into the curable pressure-sensitive adhesive. It is possible to suppress the silicone compound from adhering to the adherend and contaminating it. Further, by blending the silicone compound, the effect of further suppressing the adhesive residue on the semiconductor device is also exhibited. Examples of the silicone compound include X-22-164, X-22-164AS, X-22-164A, X-22-164B, X-22-164C, and X-22-164E manufactured by Shin-Etsu Chemical Co., Ltd. Silicone compounds having methacrylic groups at both ends thereof, silicone compounds having methacrylic groups at one end, such as X-22-174DX, X-22-2426, X-22-2475 manufactured by Shin-Etsu Chemical Co., Ltd., Daicel Cytec Silicone compounds having an acrylic group such as EBECRYL350, EBECRYL1360, etc. made by the company, silicone compounds having an acrylic group such as AC-SQ TA-100, AC-SQ SI-20, made by Toagosei, and MAC made by Toagosei -SQ TM-100, MAC-SQ SI-20, MAC-SQ HDDM etc. And a silicone compound having a sulfur group. These silicone compounds may be used alone or in combination of two or more.

The curable pressure-sensitive adhesive layer may contain a polyfunctional oligomer (for example, polyfunctional acrylate). Examples of the polyfunctional oligomer include trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, and methacrylates similar to the above. Is mentioned. Other examples include 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polypropylene glycol # 700 diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate, and methacrylates similar to those described above. These polyfunctional oligomers may be used alone or in combination of two or more.

The curable pressure-sensitive adhesive layer appropriately contains various polyfunctional compounds blended in general pressure-sensitive adhesives such as isocyanate compounds, melamine compounds, and epoxy compounds as needed for the purpose of adjusting the cohesive force as the pressure-sensitive adhesive. May be.
The curable pressure-sensitive adhesive layer may contain known additives such as an inorganic filler such as fumed silica, a plasticizer, a resin, a surfactant, a wax, and a fine particle filler.

The thickness of the curable pressure-sensitive adhesive layer is preferably equal to or greater than the maximum height of the bump formed on the semiconductor device.
Since the thickness of the curable pressure-sensitive adhesive layer is not less than the maximum height of the bump formed on the semiconductor device, the curable pressure-sensitive adhesive layer can cover all the irregularities of the semiconductor device, so that the semiconductor device can be reliably protected. . The thickness of the curable pressure-sensitive adhesive layer is preferably 150 μm or more, and more preferably 200 μm or more. The upper limit of the thickness of the curable pressure-sensitive adhesive layer is not particularly limited, but is preferably 300 μm or less from the viewpoint of ease of processing into a roll shape.
In the present specification, the maximum bump height means the height of the projection having the highest height among the projections formed on the semiconductor device. In addition to bumps, protrusions include chips.

The material of the support layer is not particularly limited. For example, polyethylene naphthalate (PEN), polyimide (PI), polyetheretherketone (PEEK), polyphenylene sulfide (PPS), polyethylene terephthalate (PET), polybutylene terephthalate (PBT) ), Polyhexamethylene terephthalate, polybutylene naphthalate, butanediol terephthalate polytetramethylene glycol copolymer, butanediol terephthalate polycaprolactone copolymer, etc. A film or sheet may be mentioned.

The support layer may be a base film or a release liner.
When the support layer is a base film, the protective tape is a support type protective tape having a base, and the base film is not peeled off. The said base film is manufactured by giving the process which raises the adhesive force with curable adhesive layers, such as a corona treatment, to the film used as material. When the support layer is a release liner, the protective tape is a non-support type protective tape. The release liner is produced by subjecting a film as a material to a release treatment. When the support layer is a release liner, the semiconductor device manufacturing method of the present invention may further include a support layer peeling step for peeling the support layer from the protective tape in addition to the protective tape lamination step and the curing step. preferable.

When the support layer is a base film, the thickness of the support layer is not particularly limited, but a preferable lower limit is 25 μm, a more preferable lower limit is 50 μm, a preferable upper limit is 250 μm, and a more preferable upper limit is 125 μm. When the support layer is within this range, the handleability is excellent and the protective tape is easily processed into a roll.
When the support layer is a release liner, the support layer has a preferable lower limit of 25 μm and a preferable upper limit of 125 μm. When the support layer is 25 μm or more, the protective tape can be made more excellent in handleability. When the thickness of the support layer is 125 μm or less, it is possible to prevent the curable pressure-sensitive adhesive layer from being pulled from the semiconductor device substrate when the support layer is peeled off. When the support layer is a release liner, a more preferable lower limit of the thickness of the support layer is 38 μm, a further preferable lower limit is 50 μm, a more preferable upper limit is 100 μm, and a further preferable upper limit is 75 μm.

The protective tape may have other layers in addition to the curable pressure-sensitive adhesive layer and the support layer.

In the method for producing a semiconductor device of the present invention, after the protective tape laminating step, a curing step of curing the curable pressure-sensitive adhesive layer by applying a stimulus to the protective tape while uniformly pressing the laminate is performed.
Since the elastic modulus of the curable pressure-sensitive adhesive layer is increased by crosslinking and curing the curable pressure-sensitive adhesive layer by stimulation, the protection performance of the semiconductor device is further improved. Further, even when a high-temperature treatment is performed, it is possible to suppress the adhesive from being melted or adhesion progressing, so that adhesive residue on the semiconductor device can be suppressed. In addition, since the adhesive strength is reduced by curing the curable pressure-sensitive adhesive layer, the semiconductor device can be easily picked up. Furthermore, the back surface of the protective tape, which has been uneven when the protective tape is applied, can be flattened by uniformly pressing the substrate on which the protective tape is applied. Since the back surface of the flattened protective tape is fixed by the curing of the curable adhesive layer, when the temporary fixing tape is laminated later, it must be in close contact with the temporary fixing tape to reliably pick up the semiconductor device. Can do.

As a method for uniformly pressing the laminate, for example, the laminate is sandwiched between two smooth plates together with a spacer, and the periphery of the smooth plate is pressed with a jig, or a transparent flexible sheet is conveyed. For example, a method of passing a laminate between two conveyors. Among these, a method of sandwiching the laminate between two smooth plates is preferable because pressurization can be performed more uniformly.
Here, the schematic diagram showing an example of the state in which the laminate is sandwiched between two smooth plates is shown in FIG. A laminate 5 of a semiconductor device substrate and a protective film and a spacer 7 are sandwiched between two smooth plates 6. The spacer 7 is disposed on the peripheral edge of the smooth plate 6, and the laminated body is uniformly pressed by fixing the portion where the spacers of both smooth plates are sandwiched by the jig 8.

When the method of uniformly pressing the laminate is a method of sandwiching the laminate between the two smooth plates, the laminate is sandwiched between the smooth plates having a transmittance of 100 to 60% at a wavelength of 350 to 450 nm. It is preferable to apply pressure uniformly. When the light transmittance of the smooth plate is within the above range, the curable pressure-sensitive adhesive layer can be reliably cured by light. A more preferable lower limit of the transmittance of the smooth plate at a wavelength of 350 to 450 nm is 70%, and a more preferable lower limit is 80%. Examples of the smooth plate having light transmittance include a plate made of an inorganic material such as a glass plate, and a resin plate made of a transparent resin such as a polycarbonate plate, a polyethylene terephthalate plate, or a polyacrylate plate.

A preferable lower limit of the pressure applied to the laminate in the curing step is 0.05 MPa, and a preferable upper limit is 3.0 MPa.
When the applied pressure is 0.05 MPa or more, the back surface shape of the protective tape can be surely flattened. By setting the applied pressure to 3.0 MPa or less, damage to the semiconductor substrate can be further suppressed. The more preferable lower limit of the pressure applied to the laminate is 0.1 MPa, the still more preferable lower limit is 0.3 MPa, the particularly preferable lower limit is 0.5 MPa, the more preferable upper limit is 2.0 MPa, and the further preferable upper limit is 1.0 MPa.

The curable pressure-sensitive adhesive is a photo-curable pressure-sensitive adhesive, and contains a polymer having an unsaturated double bond such as a vinyl group in a side chain and a photopolymerization initiator activated at a wavelength of 250 to 800 nm. When an agent is used, the photocurable pressure-sensitive adhesive layer can be crosslinked and cured by irradiating light having a wavelength of 365 nm or more.
For such a photocurable pressure-sensitive adhesive, for example, light with a wavelength of 365 nm is preferably irradiated with an illuminance of 5 mW or more, more preferably with an illuminance of 10 mW or more, and irradiation with an illuminance of 20 mW or more. More preferably, irradiation with an illuminance of 50 mW or more is particularly preferable. Moreover, it is preferable to irradiate light with a wavelength of 365 nm with an integrated illuminance of 300 mJ or more, more preferably with an integrated illuminance of 500 mJ or more and 7500 mJ or less, and more preferably with an integrated illuminance of 500 mJ or more and 7500 mJ or less. It is particularly preferable to irradiate with an integrated illuminance of 750 mJ or more and 5000 mJ or less.

Further, when the curable pressure-sensitive adhesive is a thermosetting pressure-sensitive adhesive, there is a possibility that the protective tape laminating step is heated to around 130 ° C., so the thermal decomposition temperature is 150 ° C. or higher, preferably 200 ° C. or higher. The thermosetting pressure-sensitive adhesive layer can be crosslinked and cured using a thermal polymerization initiator.

When the support layer is a release liner, the semiconductor device manufacturing method of the present invention preferably performs a support layer peeling step of peeling the support layer from the protective tape.
The support layer peeling step is preferably performed after the curing step.

In the support layer peeling step, the release liner is preferably peeled at an angle of 90 ° or more, preferably peeled at an angle of 120 ° or more, and peeled at an angle of 150 ° or more. preferable. If the angle at which the release liner is peeled off is small, the force is greatly applied in the vertical direction, and the semiconductor device substrate may peel from the curable pressure-sensitive adhesive layer. By setting the peel angle to 90 ° or more, only the release liner can be peeled more reliably. The peeling angle is usually 180 ° or less. In addition, a peeling angle means the angle which the support layer (peeling liner) and the curable adhesive layer which peeled in the protective tape form at the time of peeling.

In the present invention, since the back surface shape of the protective tape can be flattened by the above curing step, the pick-up failure can be suppressed because the temporary fixing tape and the protective tape are sufficiently bonded. The processing step after the curing step is not particularly limited. For example, the dicing tape laminating step for laminating the dicing tape on the surface opposite to the surface on which the protective tape of the semiconductor device substrate is laminated, or the dicing tape described above. A dicing step of dicing the semiconductor device substrate laminated with the protective tape to obtain a semiconductor device laminated with the protective tape, peeling the semiconductor device laminated with the protective tape from the dicing tape, and the protective tape Examples thereof include a temporary fixing tape laminating step for laminating a temporary fixing tape, a metal film forming step for forming a metal film, and a pickup step for peeling the semiconductor device from the protective tape by pressing with a needle from the temporary fixing tape side. Usually, after the protective tape laminating step, the curing step, and if necessary, the support layer peeling step, a dicing tape laminating step, a dicing step, a temporary fixing tape laminating step, a metal film forming step, and a pickup step are performed in this order. Hereinafter, each step will be described.

In the dicing tape lamination step, the dicing tape is affixed to a surface opposite to the surface on which the protective tape of the semiconductor device substrate is laminated. It is possible to suppress misalignment of the semiconductor device and device skipping obtained by applying the dicing tape. The dicing tape is not particularly limited, and a conventionally known dicing tape can be used.

In the dicing step, cutting is performed to a depth that penetrates the protective tape and the semiconductor device substrate and reaches a part of the dicing tape.
The dicing method is not particularly limited, and examples thereof include a method of dividing the semiconductor device substrate together with the protective tape using a dicing apparatus (for example, DFD 6361 manufactured by Disco). At this time, dicing may be performed in one step or two steps (step cut), but a simple one step is desirable as a process. Moreover, you may use the method of irradiating a laser beam as a method of dicing the said semiconductor device board | substrate with the said protective tape in the said dicing process. When dicing the semiconductor device substrate together with the protective tape by laser light irradiation, the laser light is irradiated so as not to penetrate the dicing tape.

In the temporary fixing tape laminating step, the temporary fixing tape is laminated on the surface of the laminate on which the protective tape is laminated. The method of lamination is not particularly limited, and all the laminates may be laminated on the temporary fixing tape at one time by peeling off the dicing tape after applying the temporary fixing tape. And may be laminated on a temporary fixing tape.
Here, FIG. 3 is a cross-sectional view schematically showing an example of the semiconductor device after the temporary fixing tape lamination step. A temporary fixing tape 4 is laminated on the laminated body of the semiconductor device 2 ′ and the protective tape 1 so as to be in contact with the surface of the laminated body on the protective tape 1 side. In the semiconductor device manufacturing method of the present invention, since the back surface shape of the protective tape is flattened in the curing step, the temporarily fixing tape and the protective tape are sufficiently adhered.

The temporary fixing tape is not particularly limited, but preferably has heat resistance. Examples of the heat-resistant temporary fixing tape include polyimide tape (tape based on polyimide), Teflon (registered trademark) tape (tape based on Teflon), and silicone tape. Of these, polyimide tape is preferred because of its heat resistance.

In the metal film forming step, a metal film is formed on the semiconductor device after the temporary fixing tape is laminated.
By forming the metal film, the semiconductor device can be shielded from electromagnetic waves, and malfunction of the semiconductor device due to high frequency can be prevented. Examples of the method for forming the metal film include a sputtering method, a spray method, a plating method, and the like, but the sputtering method is preferable. The sputtering conditions are not particularly limited, and conventional sputtering conditions can be used.

In the pickup step, the protective tape and the temporary fixing tape are peeled off from the semiconductor device by picking up the needle from the temporary fixing tape side of the laminated body in which the temporary fixing tapes are laminated, and picked up. In the present invention, since the back surface of the protective tape is flat, the protective tape and the temporary fixing tape are sufficiently in close contact with each other. Therefore, when the semiconductor device is pushed up with a needle as shown in FIG. 4, it is possible to suppress the protective tape 1 from being peeled off first from the temporary fixing tape 4, and only the semiconductor device can be picked up.

ADVANTAGE OF THE INVENTION According to this invention, even if it is a semiconductor device with a big bump height, the manufacturing method of the semiconductor device which can suppress pick-up failure can be provided.

(A) It is sectional drawing which showed typically the state which affixed the conventional protective tape on the semiconductor device board | substrate. (B) It is sectional drawing which showed typically the state which laminated | stacked the temporary fixing tape, after attaching the conventional protective tape to a semiconductor device board | substrate and performing dicing. (C) It is sectional drawing which showed typically the mode at the time of the pick-up at the time of manufacturing a semiconductor device using the conventional protective tape. It is a mimetic diagram showing an example of the state where a layered product was inserted between two smooth boards. It is sectional drawing which showed typically an example of the semiconductor device after a temporary fixing tape lamination | stacking process. It is sectional drawing which showed an example of the pick-up process typically.

Hereinafter, embodiments of the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.

Example 1
(Manufacture of protective tape)
A reactor equipped with a thermometer, a stirrer, and a cooling pipe was prepared. In this reactor, 94 parts by weight of 2-ethylhexyl acrylate as an alkyl (meth) acrylate and 6 parts by weight of hydroxyethyl methacrylate as a functional group-containing monomer After adding 0.01 parts by weight of lauryl mercaptan and 80 parts by weight of ethyl acetate, the reactor was heated to start refluxing. Subsequently, 0.01 parts by weight of 1,1-bis (t-hexylperoxy) -3,3,5-trimethylcyclohexane was added as a polymerization initiator in the reactor, and polymerization was started under reflux. It was. Next, after 1 hour and 2 hours from the start of polymerization, 0.01 parts by weight of 1,1-bis (t-hexylperoxy) -3,3,5-trimethylcyclohexane was added, and the polymerization was started. 4 hours later, 0.05 part by weight of t-hexylperoxypivalate was added to continue the polymerization reaction. Then, 8 hours after the start of polymerization, an ethyl acetate solution of a functional group-containing (meth) acrylic polymer having a solid content of 55% by weight and a weight average molecular weight of 600,000 was obtained.
The resin solid content of 100 parts by weight of the ethyl acetate solution containing the functional group-containing (meth) acrylic polymer was added and reacted with 3.5 parts by weight of 2-isocyanatoethyl methacrylate as the functional group-containing unsaturated compound. To obtain a polymerizable polymer. Thereafter, 1 part by weight of a photopolymerization initiator (Esacure One, manufactured by Nippon Siebel Hegner) and 0.15 parts by weight of an isocyanate curing agent (Coronate L) are added to 100 parts by weight of the resin solid content of the ethyl acetate solution of the obtained polymerizable polymer. The parts were mixed to obtain an ethyl acetate solution of a curable adhesive.
The obtained curable pressure-sensitive adhesive ethyl acetate solution was coated with a doctor knife on a 50 μm polyethylene terephthalate (PET) film having a release treatment on one side so that the dry film thickness was 67 μm. The coating solution was dried by heating at 5 ° C. for 5 minutes. This was bonded to the corona-treated surface of a substrate made of a transparent polyethylene naphthalate film (PEN) having a thickness of 50 μm and subjected to corona treatment on one side. Further, in the same manner, the pressure-sensitive adhesive solution was applied onto the release PET film so that the dry film thickness was 67 μm, and the PEN pressure-sensitive adhesive liner prepared earlier was bonded to the surface from which the release liner was peeled off. This operation was repeated twice to change the thickness of the curable pressure-sensitive adhesive layer to 201 μm, and then subjected to stationary curing at 40 ° C. for 3 days to obtain a protective tape.

(Manufacture of semiconductor devices)
The obtained protective tape was bonded to the surface of the 50 mm × 100 mm semiconductor device substrate (maximum height of protrusion: 180 μm) while being heated by a roll laminator having a roller temperature of 90 ° C. Next, the semiconductor device substrate on which the protective tape was applied as shown in FIG. 2 was sandwiched between two glass plates together with a spacer, and the portion where the spacer was arranged was fixed with a jig. At this time, pressure sensitive paper was laminated between the semiconductor device substrate and the glass plate, and the fixing condition of the jig was adjusted so that the pressure (flattening pressure) applied to the semiconductor device substrate was 0.05 MPa. Then, using an ultra-high pressure mercury lamp from the protective tape side of the laminate while maintaining the pressurized state, the irradiation intensity is adjusted so that the irradiation intensity to the adhesive tape is 80 mW / cm ^{2 by} applying ultraviolet light of 365 nm for 1 minute. Then, the curable pressure-sensitive adhesive layer was crosslinked and cured. Next, the jig was removed, the semiconductor device substrate on which the protective tape was applied was taken out, and the dicing tape was attached to the surface of the semiconductor device substrate opposite to the surface on which the protective tape was applied. After bonding the dicing tape, the semiconductor device substrate was diced and cut until it was cut into a part of the dicing tape through the semiconductor device substrate and the protective tape at 10 mm □ to obtain a semiconductor device. After dicing, the temporary fixing tape was laminated | stacked on the surface by which the protective tape of the obtained semiconductor device was affixed, and the dicing tape was peeled. Thereafter, the semiconductor device was picked up by needle pickup.

(Examples 2-3, Comparative Example 1, Reference Example 1)
A protective tape and a semiconductor device were produced in the same manner as in Example 1 except that the flattening pressure was as shown in Table 1.

(Comparative Example 2)
In the manufacture of semiconductor devices, the protective tape was pressed in the same manner as in Example 1 except that the semiconductor device substrate on which the protective tape was applied was pressed at 1 MPa, and then the curable pressure-sensitive adhesive layer was cured after releasing the pressure. And semiconductor devices were manufactured.

Example 4
Example 1 except that a 50 μm thick PET film with a release treatment applied on one side was used as a release liner instead of a 50 μm thick transparent PEN film with a corona treatment on one side in the production of the protective tape. A protective tape was obtained in the same manner. In manufacturing semiconductor devices, the pressure applied to the semiconductor device substrate was set to 1 MPa, and the dicing was performed after the release liner was peeled off at an angle of 180 degrees with respect to the semiconductor device substrate after curing of the curable pressure-sensitive adhesive layer. A semiconductor device was manufactured in the same manner.

(Example 5, Reference Example 2)
A protective tape and a semiconductor device were produced in the same manner as in Example 4 except that the thickness of the support layer was as shown in Table 1.

<Evaluation>
The following evaluation was performed about the protective tape and semiconductor device which were obtained by the Example, the comparative example, and the reference example.
The results are shown in Table 1.

(Evaluation of yield)
The yield was determined from the number of semiconductor devices in which pickup failures occurred in the 100 obtained semiconductor devices. A case where the yield was 90% or more was evaluated as A, a case where the yield was 80% or more and less than 90% was evaluated as B, and a case where the yield was less than 80% was evaluated as C. In Reference Example 1, although the yield was A, the obtained semiconductor device was damaged. In Reference Example 2, although the yield was A, a part of the curable pressure-sensitive adhesive layer was also peeled off from the semiconductor device substrate when the release liner was peeled off.

ADVANTAGE OF THE INVENTION According to this invention, even if it is a semiconductor device with a big bump height, the manufacturing method of the semiconductor device which can suppress pick-up failure can be provided.

DESCRIPTION OF SYMBOLS 1 Protective tape 11 Curing-type adhesive layer 11 'Adhesive layer 12 Support layer 2 Semiconductor device board | substrate 2' Semiconductor device 3 Bump 4 Temporary fixing tape 5 Laminated body 6 Smooth plate 7 Spacer 8 Jig

Claims (5)

A protective tape laminating step for obtaining a laminate by laminating a protective tape having a curable pressure-sensitive adhesive layer and a support layer from the curable pressure-sensitive adhesive layer side on the bump-formed surface of the semiconductor device substrate having bumps, and the lamination And a curing step of curing the curable pressure-sensitive adhesive layer by applying a stimulus to the protective tape while uniformly pressing the body. The method for manufacturing a semiconductor device according to claim 1, wherein the height of the bump is 150 μm or more. The manufacturing method of the semiconductor device of Claim 1 or 2 which pressurizes a laminated body with the pressure of 0.05-3.0 MPa in a hardening process. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the laminate is sandwiched and pressed uniformly by a smooth plate having a transmittance of 100 to 60% at a wavelength of 350 to 450 nm in the curing step. The support layer is a release liner, has a support layer peeling step for peeling the support layer from a protective tape, and the thickness of the support layer is 25 to 125 µm. A method for manufacturing a semiconductor device.

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