JP2006303049A - Supporting plate - Google Patents

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JP2006303049A
JP2006303049A JP2005120469A JP2005120469A JP2006303049A JP 2006303049 A JP2006303049 A JP 2006303049A JP 2005120469 A JP2005120469 A JP 2005120469A JP 2005120469 A JP2005120469 A JP 2005120469A JP 2006303049 A JP2006303049 A JP 2006303049A
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support plate
wafer
abbe
refractive index
range
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Hiroyuki Hirano
博之 平野
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Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a plastic supporting plate which can support an extremely thin wafer during manufacturing and reduce breakdown for use to obtain the wafer having a smooth polishing surface, and moreover assure higher tranmsparency, rigidity, and a small line expansion coefficient. <P>SOLUTION: The supporting plate is formed by molding a molding material which is constituted of a synthetic resin of 15 to 95 weight% and a fiber reinforced material of 5 to 85 wt.% having a substantially identical refractive index and/or the Abbe's number and assures an ultraviolet ray transmissivity of 30% or higher. Here, the substantially identical refractive index means that the refractive index is matched in a range for verifying a light beam transmissivity of 50% or higher and an ultraviolet ray transmissivity of 50% or higher. It is preferable that refractive indices are matched in a range of ±0.015. The substantially identical Abbe's number means that the Abbe's number is matched in a range for verifying the light beam transmissivity of 50% or higher and the ulratraviolet ray transmissivity of 50% or higher. It is preferable that the Abbe's numbers are matched in a range of ±10. The ultraviolet ray means light in a wavelength region of 320 to 370 nm. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、例えば、シリコン・ウェハーのような板状物を研磨する際にこれを支持しておくのに用いられるプラスチック製支持プレートに関する。   The present invention relates to a plastic support plate used to support a plate-like object such as a silicon wafer when it is polished.

半導体集積回路(以下ICチップという)は、通常、高純度シリコン単結晶等をスライスしてシリコン・ウェハーとしたのち、フォトレジストを利用してウェハー表面に所定の回路パターンを形成して、次いでウェハー裏面を研磨機により研磨して、ウェハーの厚さを薄くし、最後にウェハーをダイシングしてチップ化することにより、製造されている。   A semiconductor integrated circuit (hereinafter referred to as an IC chip) is usually formed by slicing a high-purity silicon single crystal or the like to form a silicon wafer, and then forming a predetermined circuit pattern on the wafer surface using a photoresist. It is manufactured by polishing the back surface with a polishing machine to reduce the thickness of the wafer, and finally dicing the wafer into chips.

近年、ICチップの用途が広がり、厚さ50μm程度の極めて薄いシリコン・ウェハー(以下、極薄ウェハーという)が要求されるようになってきた。しかしながら、極薄ウェハーは、従来の厚さ100〜600μm程度のものに比べて、ソリが大きく衝撃により割れ易くなるので取扱性に劣り、従来のシリコン・ウェハーと同様に加工しようとすると破損する場合がある。   In recent years, the use of IC chips has expanded, and an extremely thin silicon wafer (hereinafter referred to as an ultrathin wafer) having a thickness of about 50 μm has been required. However, the ultra-thin wafer is inferior in handling because it has a large warp and is easily broken by impact compared to the conventional one with a thickness of about 100 to 600 μm, and it breaks when trying to process like a conventional silicon wafer There is.

また、極薄ウェハーは、衝撃によるダメージを受け易く研磨工程またはダイシング工程で破損する危険性が高く、ICチップにバンプ(微細電極)を作製する際にも破損し易いため、歩留まりが悪い。このため、極薄ウェハーからICチップを製造する過程においてウェハーの取扱性を良くすることが求められている。   In addition, an ultra-thin wafer is easily damaged by an impact and has a high risk of breakage in a polishing process or a dicing process, and is easily broken when a bump (fine electrode) is formed on an IC chip, so that the yield is poor. For this reason, it is required to improve the handleability of the wafer in the process of manufacturing the IC chip from the ultra-thin wafer.

この要求に対して、支持テープを用いてウェハーを支持プレートに貼り付け、支持プレートに固定した状態でウェハーを研磨する方法が提案されている。この方法によれば、ウェハーの取扱性が向上し、極薄ウェハーおよびICチップを歩留まりよく製造することができる。   In response to this requirement, a method has been proposed in which a wafer is affixed to a support plate using a support tape, and the wafer is polished while being fixed to the support plate. According to this method, the handleability of the wafer is improved, and ultrathin wafers and IC chips can be manufactured with a high yield.

支持テープとしては様々なテープが開発されており(特許文献1参照)、特に支持テープに光による刺激を与えることにより同テープの粘着力を制御する方式の市販品もある(積水化学工業社製「セルファBG」など)。このような光による粘着力の制御方式では、熱による刺激を与えて粘着力を制御する方式より、ウェハーに対してダメージが少なく、周辺の装置に対しても悪影響がないと考えられる。支持プレートとしてはガラス製のものが広く用いられている。これは、ガラスが可視光や紫外線を透過し支持テープの粘着力を制御することができ、取扱性は良くないものの、線膨張係数が低く、研磨に適していることによる。   Various tapes have been developed as support tapes (see Patent Document 1). In particular, there is a commercially available product that controls the adhesive strength of the tape by applying light stimulation to the support tape (manufactured by Sekisui Chemical Co., Ltd.). "Selfa BG"). In such a method for controlling the adhesive force by light, it is considered that there is less damage to the wafer and no adverse effect on peripheral devices than the method of controlling the adhesive force by applying heat stimulation. A glass plate is widely used as the support plate. This is because glass can transmit visible light and ultraviolet light and can control the adhesive force of the support tape, and the handleability is not good, but it has a low coefficient of linear expansion and is suitable for polishing.

近年、支持プレートとしてプラスチック製のものが開発されている。しかし、これには、剛性が弱く、線膨張係数が大きく、シリコン・ウェハーへの適用範囲が狭いといった難点がある。
特開2003−171624号公報
In recent years, plastic support plates have been developed. However, this has the disadvantages of low rigidity, a large linear expansion coefficient, and a narrow range of application to silicon wafers.
JP 2003-171624 A

上記のような点を解決すべく、プラスチック製支持プレートの曲げ剛性の向上および線膨張係数の低下を目的として、プレート成形用の合成樹脂にガラス繊維等の線膨張係数の高い繊維状強化材を配合することが考えられる。しかし、このような異種材料を配合した合成樹脂から成形したプラスチック製支持プレートでは、透明度が低下し、支持プレートの粘着力を制御するための可視光や紫外線を透過できないという問題がある。これは、合成樹脂と繊維状強化材では屈折率やアッベ数が大きく異なり、合成樹脂と繊維状強化材との界面で可視光線や紫外線が散乱するためである。   In order to solve the above-mentioned points, for the purpose of improving the bending rigidity of the plastic support plate and lowering the linear expansion coefficient, a fibrous reinforcing material having a high linear expansion coefficient such as glass fiber is added to the synthetic resin for plate molding. It is possible to mix them. However, a plastic support plate molded from a synthetic resin blended with such a different material has a problem that the transparency is lowered, and visible light and ultraviolet light for controlling the adhesive force of the support plate cannot be transmitted. This is because the refractive index and Abbe number are greatly different between the synthetic resin and the fibrous reinforcing material, and visible light and ultraviolet rays are scattered at the interface between the synthetic resin and the fibrous reinforcing material.

本発明は、上記実状に鑑み、極薄ウェハーを製造する場合であってもこれを支持してウェハーの破損を低減でき、研磨面が平滑であるウェハーを得るのに用いられるプラスチック製支持プレートであって、透明度が高く、剛性もあり、加えて線膨張係数の小さい支持プレートを提供することを目的とする。   In view of the above situation, the present invention provides a plastic support plate that can be used to obtain a wafer having a smooth polished surface, which can reduce the breakage of the wafer by supporting the wafer even when manufacturing an ultra-thin wafer. Another object of the present invention is to provide a support plate having high transparency, rigidity, and a low linear expansion coefficient.

本発明による支持プレートは、合成樹脂15〜95重量%と、これと実質上同じ屈折率および/またはアッベ数を有する繊維状強化材5〜85重量%とよりなる成形材料を成形してなり、紫外線透過率が30%以上であるものである。   The support plate according to the present invention is formed by molding a molding material consisting of 15 to 95% by weight of a synthetic resin and 5 to 85% by weight of a fibrous reinforcing material having substantially the same refractive index and / or Abbe number as this, The ultraviolet transmittance is 30% or more.

ここで屈折率が実質上同じであるとは、光線透過率50%以上、紫外線透過率50%以上を確認できる範囲で屈折率が一致することを意味する。両者の屈折率は±0.015の範囲で一致することが好ましい。アッベ数が実質上同じであるとは、光線透過率が50%以上、紫外線透過率50%以上を確認できる範囲で一致することを意味する。両者のアッベ数は±10の範囲で一致することが好ましい。紫外線は320nm〜370nmの波長領域の光をいう。   Here, the fact that the refractive indexes are substantially the same means that the refractive indexes coincide within a range in which a light transmittance of 50% or more and an ultraviolet transmittance of 50% or more can be confirmed. It is preferable that the refractive indexes of both coincide in the range of ± 0.015. The fact that the Abbe numbers are substantially the same means that the light transmittance matches within a range where the light transmittance is 50% or more and the ultraviolet transmittance is 50% or more. It is preferable that both Abbe numbers correspond in the range of ± 10. Ultraviolet light refers to light in the wavelength region of 320 nm to 370 nm.

本発明による支持プレートの曲げ弾性率は好ましくは1〜40GPaであり、線膨張係数は好ましくは1.0×10−5〜7.5×10−5 (1/℃)である。 The bending elastic modulus of the support plate according to the present invention is preferably 1 to 40 GPa, and the linear expansion coefficient is preferably 1.0 × 10 −5 to 7.5 × 10 −5 (1 / ° C.).

合成樹脂と繊維状強化材の割合は、前者15〜95重量%に対し後者5〜85重量%である。後者の配合割合が少な過ぎると、支持プレートの剛性付与および線膨張係数低下の効果が十分に得えられず、多過ぎると、支持プレートの透明度が低下し支持プレートの粘着力を制御するための可視光や紫外線を透過できない。   The ratio of the synthetic resin and the fibrous reinforcing material is 5 to 85% by weight with respect to the former 15 to 95% by weight. If the latter compounding ratio is too small, the effect of imparting rigidity to the support plate and lowering the linear expansion coefficient cannot be obtained sufficiently, and if it is too large, the transparency of the support plate decreases and the adhesive force of the support plate is controlled. It cannot transmit visible light or ultraviolet light.

紫外線の刺激を与えて粘着力を制御できる支持テープを用いる場合、支持プレートは紫外線を十分透過する必要がある。紫外線領域で合成樹脂と繊維状強化材の屈折率が実質上同一であれば、紫外線が乱れることなくこれを透過し、支持テープに刺激を与えることができる。それにより、支持テープの粘着力を自由に制御することが可能になる。したがって、本発明による支持プレートの紫外線透過率は30%以上に限定され、好ましくは50%以上である。   When using a support tape that can control the adhesive force by applying ultraviolet light stimulation, the support plate needs to sufficiently transmit ultraviolet light. If the refractive index of the synthetic resin and the fibrous reinforcing material is substantially the same in the ultraviolet region, the ultraviolet rays can be transmitted without being disturbed and the support tape can be stimulated. Thereby, the adhesive force of the support tape can be freely controlled. Therefore, the ultraviolet transmittance of the support plate according to the present invention is limited to 30% or more, and preferably 50% or more.

本発明において、支持プレートを製造するための成形材料の主体をなす合成樹脂は、熱可塑性樹脂、熱硬化性樹脂および光硬化性樹脂からなる群より選択される少なくとも1種である。熱可塑性樹脂としては、特に限定されるものではないが、アクリロニトリル−ブタジエン−スチレン共重合体樹脂、ポリエチレン樹脂、ポリエチレンテレフタレート樹脂、スチレン系ポリマー、エポキシ樹脂、フッ素樹脂、シクロオレフィンポリマー、液晶ポリマー、ポリカーボネート樹脂、ポリメチルメタクリル樹脂、ポリイミド樹脂が好ましく、これらを単独で、あるいは2種類以上を組み合わせて用いることができる。熱硬化性樹脂としては、フェノール樹脂、メラミン樹脂、エポキシ樹脂等を例示することができる。光硬化性樹脂としては、エポキシアクリレートの低重合体、反応性希釈剤および光重合開始剤を混合したものを例示することができる。   In the present invention, the synthetic resin that forms the main component of the molding material for producing the support plate is at least one selected from the group consisting of thermoplastic resins, thermosetting resins, and photocurable resins. The thermoplastic resin is not particularly limited, but acrylonitrile-butadiene-styrene copolymer resin, polyethylene resin, polyethylene terephthalate resin, styrene polymer, epoxy resin, fluororesin, cycloolefin polymer, liquid crystal polymer, polycarbonate Resins, polymethyl methacrylic resins, and polyimide resins are preferred, and these can be used alone or in combination of two or more. Examples of the thermosetting resin include a phenol resin, a melamine resin, and an epoxy resin. As a photocurable resin, what mixed the low polymer of an epoxy acrylate, a reactive diluent, and a photoinitiator can be illustrated.

成形材料のもう1つの成分である繊維状強化材は、線膨張係数が好ましくは1.0×10−5(1/℃)以下である無機または有機の繊維状物質からなる。この物質を構成する繊維はアスペクト比が好ましくは1〜500のものであり、繊維の断面形状は限定されないが、円形の場合、直径は好ましくは1〜60μmである。このような繊維状強化材の材質は、限定されるものではないが、ガラス、熱硬化樹脂、エンジニアリングプラスチックなどであってよい。 The fibrous reinforcing material, which is another component of the molding material, is composed of an inorganic or organic fibrous material having a linear expansion coefficient of preferably 1.0 × 10 −5 (1 / ° C.) or less. The fibers constituting this substance have an aspect ratio of preferably 1 to 500, and the cross-sectional shape of the fibers is not limited, but in the case of a circle, the diameter is preferably 1 to 60 μm. The material of such a fibrous reinforcing material is not limited, but may be glass, thermosetting resin, engineering plastic, or the like.

支持プレートのサイズや形状は限定されるものでなく、円形や多角形のものであってよく、好ましくはウェハーの形状に対応した直径、例えば150mm程度、200mm程度、350mm程度または400mm程度を有する円形プレートである。   The size and shape of the support plate are not limited and may be circular or polygonal, and preferably have a diameter corresponding to the shape of the wafer, for example, about 150 mm, about 200 mm, about 350 mm, or about 400 mm. It is a plate.

支持プレートの基本肉厚、すなわちプレート全体に亘る肉厚は好ましくは0.5〜3mmであり、かつ基本肉厚のバラツキは好ましくは1%以下であり、より好ましくは2μm以内である。   The basic thickness of the support plate, that is, the thickness over the entire plate is preferably 0.5 to 3 mm, and the variation in the basic thickness is preferably 1% or less, more preferably within 2 μm.

本発明による支持プレートは光を十分に透過するため、光による刺激を与えることにより粘着テープの粘着力を制御する方式の自己剥離粘着テープを利用することができ、ウェハーのダメージが無く、同テープを容易に支持プレートから剥離することができる。また、本発明による支持プレートは合成樹脂製であるので、材料費を低減することができる上に、ガラス製のものに比べ支持プレートの軽量化を達成でき、剛性が高く、線膨張係数はガラス製のものに匹敵する。   Since the support plate according to the present invention sufficiently transmits light, it is possible to use a self-peeling adhesive tape of a system that controls the adhesive force of the adhesive tape by giving light stimulation, and there is no damage to the wafer, and the tape Can be easily peeled off from the support plate. In addition, since the support plate according to the present invention is made of synthetic resin, the material cost can be reduced, and the weight of the support plate can be reduced compared to that made of glass, the rigidity is high, and the linear expansion coefficient is glass. Comparable to those made.

こうして、本発明により、極薄ウェハーを製造する場合であってもこれを支持してウェハーの破損を低減でき、研磨面が平滑であるウェハーを得るのに用いられるプラスチック製支持プレートであって、しかも透明度が高く、剛性もあり、線膨張係数の小さい支持プレートを提供することができる。   Thus, according to the present invention, even when an ultra-thin wafer is manufactured, it is possible to reduce damage to the wafer by supporting it, and a plastic support plate used to obtain a wafer having a smooth polished surface, Moreover, it is possible to provide a support plate having high transparency, rigidity, and a small linear expansion coefficient.

つぎに、本発明を具体的に説明するために、本発明の実施例を挙げる。   Next, in order to describe the present invention specifically, examples of the present invention will be given.

実施例1
表1に示す屈折率およびアッベ数を有するポリカーボネート80重量%と、表1に示す屈折率およびアッベ数(ポリカーボネートのものと実質上同じ)を有するガラス繊維20重量%とよりなる成形材料から支持プレートを成形した。得られた支持プレートの紫外線透過率、曲げ弾性率および線膨脹係数を測定した。これらの測定値を表1に示す。
Example 1
A support plate made of a molding material comprising 80% by weight of polycarbonate having the refractive index and Abbe number shown in Table 1 and 20% by weight of glass fiber having the refractive index and Abbe number (substantially the same as that of polycarbonate) shown in Table 1. Was molded. The obtained support plate was measured for ultraviolet transmittance, flexural modulus, and linear expansion coefficient. These measured values are shown in Table 1.

比較例1
表1に示す屈折率およびアッベ数を有するポリカーボネート80重量%と、表1に示す屈折率およびアッベ数(ポリカーボネートのものと実質上異なる)を有するガラス繊維20重量%とよりなる成形材料から支持プレートを成形した。得られた支持プレートの紫外線透過率、曲げ弾性率および線膨脹係数を測定した。これらの測定値を表1に示す。

Figure 2006303049
Comparative Example 1
A support plate made of a molding material comprising 80% by weight of polycarbonate having the refractive index and Abbe number shown in Table 1 and 20% by weight of glass fiber having the refractive index and Abbe number (substantially different from that of polycarbonate) shown in Table 1. Was molded. The obtained support plate was measured for ultraviolet transmittance, flexural modulus, and linear expansion coefficient. These measured values are shown in Table 1.
Figure 2006303049

表1から明らかなように、実施例1では繊維状強化材を使用していることで曲げ剛性が向上し、線膨張係数が低下し、さらに屈折率とアッベ数がポリカーボネート樹脂のそれらに実質上同じであることで良好な透過率が得られた。   As is apparent from Table 1, in Example 1, the use of the fibrous reinforcing material improves the bending rigidity, decreases the linear expansion coefficient, and further substantially reduces the refractive index and Abbe number to those of the polycarbonate resin. Good transmittance was obtained by the same.

使用例1
実施例1と同様にして、ポリカーボネート80重量%と、これと実質上同じ屈折率およびアッベ数を有するガラス繊維20重量%とよりなる成形材料から支持プレートを成形した。この支持プレートの紫外線透過率は70%であった。この支持プレートに支持テープ(積水化学社製「セルファBG」)を貼り付け、その上にウェハーを固定して表面研磨した。その後、支持テープの裏面からの紫外線照射(中心波長365nmの高圧水銀灯使用、照射強度100mW)によって支持テープからガスを発生させ、支持テープの粘着力を低下させた。これにより支持テープからウェハーが剥がれた。ガス発生からウェハー剥離までの時間は18秒であった。
Example 1
In the same manner as in Example 1, a support plate was molded from a molding material comprising 80% by weight of polycarbonate and 20% by weight of glass fibers having substantially the same refractive index and Abbe number. The ultraviolet transmittance of this support plate was 70%. A support tape (“Selfa BG” manufactured by Sekisui Chemical Co., Ltd.) was attached to the support plate, and a wafer was fixed on the support plate to polish the surface. Thereafter, gas was generated from the support tape by ultraviolet irradiation (using a high-pressure mercury lamp with a central wavelength of 365 nm, irradiation intensity of 100 mW) from the back surface of the support tape, thereby reducing the adhesive strength of the support tape. This peeled off the wafer from the support tape. The time from gas generation to wafer peeling was 18 seconds.

使用例2
参考例1と同様にして、ポリカーボネート80重量%と、これと実質上異なる屈折率およびアッベ数を有するガラス繊維20重量%とよりなる成形材料から支持プレートを成形した。この支持プレートの紫外線透過率は15%であった。この支持プレートに支持テープ(積水化学社製「セルファBG」)を貼り付け、その上にウェハーを固定して表面研磨した。その後、支持テープの裏面からの紫外線照射(中心波長365nmの高圧水銀灯使用、照射強度100mW)を行ったが、支持テープからガスが多少発生するだけで、ウェハーは支持テープから剥がれなかった。
Example 2
In the same manner as in Reference Example 1, a support plate was molded from a molding material comprising 80% by weight of polycarbonate and 20% by weight of glass fibers having a refractive index and an Abbe number substantially different from those. The ultraviolet transmittance of this support plate was 15%. A support tape (“Selfa BG” manufactured by Sekisui Chemical Co., Ltd.) was attached to the support plate, and a wafer was fixed on the support plate to polish the surface. Thereafter, ultraviolet irradiation (using a high-pressure mercury lamp with a central wavelength of 365 nm, irradiation intensity: 100 mW) was performed from the back surface of the support tape, but only a slight amount of gas was generated from the support tape, and the wafer was not peeled off from the support tape.

Claims (1)

合成樹脂15〜95重量%と、これと実質上同じ屈折率および/またはアッベ数を有する繊維状強化材5〜85重量%とよりなる成形材料を成形してなり、紫外線透過率が30%以上である支持プレート。

A molding material comprising 15 to 95% by weight of a synthetic resin and 5 to 85% by weight of a fibrous reinforcing material having substantially the same refractive index and / or Abbe number as this, and having an ultraviolet transmittance of 30% or more Is the support plate.

JP2005120469A 2005-04-19 2005-04-19 Supporting plate Withdrawn JP2006303049A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008141162A (en) * 2006-11-09 2008-06-19 Hitachi Chem Co Ltd Member for supporting semiconductor and method of working semiconductor device
JP2010042469A (en) * 2008-08-12 2010-02-25 Tokyo Ohka Kogyo Co Ltd Support plate
WO2015170556A1 (en) * 2014-05-08 2015-11-12 冨士ベークライト株式会社 Polishing carrier and method for manufacturing same
JP2019033214A (en) * 2017-08-09 2019-02-28 積水化学工業株式会社 Manufacturing method of semiconductor device
CN111584417A (en) * 2020-05-29 2020-08-25 上海凯虹科技电子有限公司 Method for grinding wafer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008141162A (en) * 2006-11-09 2008-06-19 Hitachi Chem Co Ltd Member for supporting semiconductor and method of working semiconductor device
JP2010042469A (en) * 2008-08-12 2010-02-25 Tokyo Ohka Kogyo Co Ltd Support plate
WO2015170556A1 (en) * 2014-05-08 2015-11-12 冨士ベークライト株式会社 Polishing carrier and method for manufacturing same
JP2019033214A (en) * 2017-08-09 2019-02-28 積水化学工業株式会社 Manufacturing method of semiconductor device
CN111584417A (en) * 2020-05-29 2020-08-25 上海凯虹科技电子有限公司 Method for grinding wafer

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