CN110828364B - Mass transfer method, manufacturing method of display device and display device - Google Patents
Mass transfer method, manufacturing method of display device and display device Download PDFInfo
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- CN110828364B CN110828364B CN201911141924.2A CN201911141924A CN110828364B CN 110828364 B CN110828364 B CN 110828364B CN 201911141924 A CN201911141924 A CN 201911141924A CN 110828364 B CN110828364 B CN 110828364B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Abstract
The embodiment of the application provides a huge transfer method, a manufacturing method of a display device and the display device, and relates to the technical field of semiconductor device manufacturing. The method for transferring the huge amount firstly carries out wet etching on the original substrate with the micro light-emitting diode array so as to reduce the contact area between the micro light-emitting diode array and the original substrate. Next, the side of the micro light emitting diode array remote from the original base is bonded to the first temporary substrate. Then, wet etching is carried out on the original substrate again so as to peel off the micro light emitting diode array from the original substrate, and the original substrate is removed. And finally, combining the micro light emitting diode array with the target substrate through the first temporary substrate to complete mass transfer. Therefore, the probability of losing the micro light emitting diode array in the process of transferring the large quantity of the micro light emitting diode array is reduced by adopting a mode of combining the temporary substrate fixing micro light emitting diode array with successive corrosion, and the displacement error is reduced, so that the yield is improved.
Description
Technical Field
The present application relates to the field of semiconductor device manufacturing technology, and in particular, to a mass transfer method, a manufacturing method of a display device, and a display device.
Background
Micro light Emitting diodes (Micro-LEDs) are "Micro" LEDs (light Emitting diodes), and Micro light Emitting Diode array displays are a new display technology, and the core is different from other display technologies, such as liquid crystal displays (Liquid Crystal Display, LCDs), organic light-Emitting Diode (OLED) plasma displays (Plasma Display Panel, PDPs), and the like, in that they employ inorganic LEDs as light Emitting pixels.
The fabricated tiny LEDs need to be transferred to the substrate where the driving circuitry is fabricated. The number of pixels of a television or mobile phone screen is quite huge, the size of the pixels is small, the tolerance of a display product to pixel errors is low, a display screen with 'bright spots' or 'dark spots' cannot meet the requirements of users, and therefore, it is a very difficult and complex technology to reliably transfer the small pixels onto a substrate with a driving circuit and realize circuit connection. Indeed, "mass transfer" is indeed a major bottleneck technology in the current commercialization of Micro-LEDs. The transfer efficiency and success rate determine whether commercialization is successful or not. How to improve the yield of Micro-LED devices after mass transfer is a problem worthy of research.
Disclosure of Invention
In view of the foregoing, it is an object of the present application to provide a mass transfer method, a manufacturing method of a display device, and a display device, so as to solve the above-mentioned problems.
The application provides a technical scheme:
in a first aspect, embodiments provide a method of mass transfer comprising:
wet etching is carried out on an original substrate provided with the micro light emitting diode array so as to reduce the contact area between the micro light emitting diode array and the original substrate;
bonding a side of the micro light emitting diode array remote from the original base with a first temporary substrate;
wet etching is carried out on the original substrate again, so that the micro light emitting diode array is stripped from the original substrate, and the original substrate is removed;
and combining the miniature light-emitting diode array with a target substrate through the first temporary substrate to complete mass transfer.
In an alternative embodiment, the step of bonding the micro led array to the target substrate through the first temporary substrate includes:
bonding a side of the micro light emitting diode array located on the first temporary substrate, which is away from the first temporary substrate, to a second temporary substrate, and separating the first temporary substrate from the micro light emitting diode array;
and combining one side of the miniature light emitting diode array positioned on the second temporary substrate away from the second temporary substrate with a target substrate.
In an alternative embodiment, the micro light emitting diode array is bonded to the first temporary substrate through a first adhesive layer, and the step of separating the first temporary substrate from the micro light emitting diode array includes:
and heating the first adhesive layer to reduce the adhesive force of the area where the first adhesive layer contacts the micro light emitting diode array, thereby separating the first temporary substrate from the micro light emitting diode array.
In an alternative embodiment, the micro light emitting diode array is bonded to the first temporary substrate through a first adhesive layer, and the step of separating the first temporary substrate from the micro light emitting diode array includes:
and irradiating the first adhesive layer by using ultraviolet rays, and reducing the adhesive force of the area where the first adhesive layer is contacted with the micro light emitting diode array so as to separate the first temporary substrate from the micro light emitting diode array.
In an alternative embodiment, the first adhesive layer is a photoresist layer.
In an alternative embodiment, the array of micro light emitting diodes is bonded to the second temporary substrate by a second adhesive layer.
In an alternative embodiment, the second adhesive layer is an adhesive layer.
In an alternative embodiment, the original substrate is made of a semiconductor material.
In a second aspect, an embodiment provides a method for manufacturing a display device, where the macro-transferring method according to any one of the foregoing embodiments is used to implement macro-transferring of a micro light emitting diode array.
In a third aspect, an embodiment provides a display device manufactured by the method for manufacturing a display device according to the foregoing embodiment.
The embodiment of the application provides a mass transfer method, a manufacturing method of a display device and the display device. And finally, placing the array on a target substrate through the temporary substrate to finish the mass transfer, so that the probability of losing the micro light-emitting diode array in the mass transfer process is reduced by adopting a mode of combining the temporary substrate fixing of the micro light-emitting diode array with successive corrosion, and the displacement error is reduced, thereby improving the yield.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flowchart of a macro-transfer method according to an embodiment of the present application.
Fig. 2 is a schematic structural diagram of an original substrate with a micro led array according to an embodiment of the present application.
Fig. 3 is a schematic diagram corresponding to step S1 of the macro transfer method according to the embodiment of the present application.
Fig. 4 is a schematic diagram corresponding to step S2 of the macro transfer method according to the embodiment of the present application.
Fig. 5 is a schematic diagram corresponding to step S3 of the macro transfer method according to the embodiment of the present application.
Fig. 6 is a flowchart of the substeps of step S4 provided in the embodiment of the present application.
Fig. 7 is a schematic diagram corresponding to step S41 of the macro transfer method according to the embodiment of the present application.
Fig. 8 is a second schematic diagram corresponding to step S41 of the macro transfer method according to the embodiment of the present application.
Fig. 9 is a schematic diagram corresponding to step S42 of the macro transfer method according to the embodiment of the present application.
Fig. 10 is a schematic diagram of a display device according to an embodiment of the present application.
Icon: 1-an original substrate; 2-micro light emitting diode array; 21-a micro light emitting diode; 3-a first temporary substrate; 4-a second temporary substrate; 5-a target substrate; 10-a first adhesive layer; 20-a second adhesive layer; 100-a display device; 110-display panel.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
In the description of the present application, it should also be noted that, unless explicitly stated and limited otherwise, the terms "disposed," "connected," and "coupled" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected. Either mechanically or electrically. Can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should be understood that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like indicate orientations or positional relationships based on those shown in the drawings, or those conventionally put in place when the product of the application is used, or those conventionally understood by those skilled in the art, merely for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the application.
Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
The Micro-LED has the advantages of light weight, long service life, low power consumption and low cost, has extremely wide application prospect in the display field, and is a target commonly pursued in the industry. Full-color Micro-LED technology is a necessary trend of development in the field, but has been slow to progress due to unsolved problems of its Micro-fabrication technology, mass transfer technology, RGB (RGB color mode) colorization technology, etc. Especially the mass transfer technology, the problem of how to precisely transfer a large number of Micro-LED devices to a receiving substrate while keeping the loss rate of the Micro-LED devices low is faced.
As described in the background section, current mass transfer techniques typically adhere the micro light emitting diode array to a temporary substrate and then etch the original substrate. Because the uniformity of the corrosion rate is difficult to control, partial chips are corroded and lost in the process of hollowing out, and the yield is limited. How to improve the yield of the display device after mass transfer is a problem worthy of research.
In view of this, embodiments of the present application provide a bulk transfer method that allows for convenient replenishment of the etchant by first partially etching the original substrate. And then bonding the micro light emitting diode array with the temporary substrate, and continuing to etch the original substrate until the etching is complete. And finally, placing the micro light emitting diode array on a target substrate through the temporary substrate to finish the mass transfer, thereby reducing the probability of losing the micro light emitting diode array in the mass transfer process, reducing displacement errors and improving the yield. The above method is described in detail below.
Referring to fig. 1 and fig. 2 in combination, fig. 1 is a flow chart of a mass transfer method according to the present embodiment, and fig. 2 is a schematic structural diagram of an original substrate 1 with a micro led array 2 according to the present embodiment. The mass transfer method provided in this embodiment includes the following steps:
in step S1, wet etching is performed on the original substrate 1 on which the micro light emitting diode array 2 is fabricated, so as to reduce the contact area between the micro light emitting diode array 2 and the original substrate 1.
The original substrate 1 is used for preliminary fixing of the micro light emitting diode array 2. The micro led array 2 includes a plurality of micro leds 21 sequentially arranged. It should be understood that the number of the micro light emitting diodes 21 in fig. 2 is merely illustrative, and the number of the micro light emitting diodes 21 in the actual process may be any number. Optionally, the raw substrate 1 is made of a semiconductor material, and further, the raw substrate 1 is made of a semiconductor material capable of growing an epitaxial layer of the micro light emitting diode 21 on the raw substrate 1, for example, si, gaAs, gaP, gaN, siC, alGaN, etc., which is not limited herein.
In this embodiment, the micro light emitting diode 21 may have various structures, for example, the same-side electrode structure, i.e., the P-type electrode and the N-type electrode are located on the same side of the substrate. For another example, a vertical electrode structure is also possible, i.e. the P-type electrode and the N-type electrode are located on different sides of the substrate. The embodiments of the present application are not limited in this regard.
For convenience of description, the embodiment of the application uses the micro light emitting diode 21 as the electrode structure on the same side as an example, as shown in fig. 2, the original substrate 1 is fabricated with a micro light emitting diode array 2 including a plurality of micro light emitting diodes 21, each micro light emitting diode 21 includes a substrate and two electrodes, and one side of the substrate is connected with the original substrate 1. In this embodiment, the material of the micro light emitting diode array 2 may be GaAs, gaP, gaN, siC, alGaN, etc., and the material of the micro light emitting diode array 2 may also be other semiconductor materials, which is not limited in this embodiment.
In this embodiment of the present application, the micro light emitting diode 21 may further include an epitaxial layer, and it should be noted that the embodiment of the present application is not limited to a specific structure of the epitaxial layer of the micro light emitting diode 21, and in one implementation manner, the epitaxial layer of the micro light emitting diode 21 may include an N-type semiconductor, a P-type semiconductor, and an active layer located between the N-type semiconductor and the P-type semiconductor, where the active layer may include a multiple quantum well layer, and may further include other structures.
Referring to fig. 3 in combination, fig. 3 is a schematic diagram corresponding to step S1 of the macro transfer method according to the embodiment of the present application. The original substrate 1 is subjected to wet etching in the step S1, so that the contact area between the micro light emitting diode array 2 and the original substrate 1 is reduced. The micro light emitting diode array 2 is in a semi-suspended state, and a space is reserved for facilitating the supply of corrosive liquid.
Currently, the commonly used method for peeling the original substrate 1 is a laser peeling method, a direct wet etching sacrificial layer method or a direct wet back etching substrate method. Among them, the laser lift-off method is liable to damage the micro led array 2, resulting in low lift-off yield. The direct wet etching sacrificial layer method or the direct wet back etching substrate method also causes loss of the peeling yield due to poor control accuracy of the reaction rate. Therefore, the embodiment of the application sequentially adopts a wet etching method to control the etching rate, and can improve the stripping yield.
Further, since the original substrate 1 remains in the dry etching process, and the accuracy of the subsequent transfer is affected by the original substrate 1 remains, the uneven micro light emitting diode array 2 is easily displaced in the subsequent transfer process, so that the yield is low. In the embodiment of the application, the contact area between the micro light emitting diode array 2 and the original substrate 1 is reduced by adopting wet etching, after the wet etching is adopted, the surface of the micro light emitting diode array 2 is cleaner, the original substrate 1 is not left, the problem of the left is not needed to be removed again, and therefore the yield can be ensured conveniently and reliably, and the method has advantages compared with the dry etching and the like.
In addition, the dry etching is easy to be limited by equipment, is difficult to realize large-area uniform etching, has higher cost, has simple equipment and low cost, can control the etching completion time to be several minutes to tens of minutes, and is more suitable for large-area industrial production.
Step S2, bonding the side of the micro led array 2 away from the original substrate 1 with a first temporary substrate 3.
Referring to fig. 4 in combination, fig. 4 is a schematic diagram corresponding to step S2 of the macro transfer method according to the embodiment of the present application.
Wherein the first temporary substrate 3 is used for temporarily fixing the micro light emitting diode array 2. In one implementation manner, the first adhesive layer 10 may be used to combine the micro light emitting diode array 2 with the original substrate 1, so as to avoid displacement of each micro light emitting diode 21 during subsequent processing, and the material of the first temporary substrate 3 may be flexibly selected, which is not limited in the embodiment of the present application, so long as the temporary fixing effect can be achieved, and the viscosity control of the first adhesive layer 10 is not affected.
Furthermore, the corrosion rate can be controlled by controlling the concentration and the supply amount of the corrosion liquid, so that the loss of the micro light emitting diode array 2 caused by over-corrosion in the corrosion process can be further slowed down. The selection, concentration and replenishment amount of the etching solution can be selected according to the actual situation with reference to the prior art, so as to achieve the purpose of controlling the etching rate, and will not be described herein.
Meanwhile, as wet etching is adopted, the etching rate is difficult to control, and therefore, in the embodiment of the application, the first temporary substrate 3 is combined with the micro light emitting diode array 2, so that the problem that part of the micro light emitting diode array 2 is lost due to over etching in the etching process is alleviated. And step S3, carrying out wet etching on the original substrate 1 again to peel off the micro light emitting diode array 2 from the original substrate 1, and removing the original substrate 1.
Referring to fig. 5 in combination, fig. 5 is a schematic diagram corresponding to step S3 of the macro transfer method according to the embodiment of the present application. After temporarily fixing the micro light emitting diode array 2 on the first temporary substrate 3, wet etching is performed again on the original substrate 1 in a semi-suspended state, and the space formed after etching is reserved in the previous etching, so that the etching efficiency is more beneficial to control, and the original substrate 1 and the micro light emitting diode array 2 are completely stripped by adopting proper etching efficiency, so that the original substrate 1 is removed. Fig. 5 is a schematic diagram of the original substrate 1 after being completely peeled off from the micro led array 2.
In the embodiment of the application, the original substrate 1 is sequentially corroded to control the corrosion rate, so that the purpose of avoiding the loss of part of the micro light emitting diode array 2 due to over-corrosion in the corrosion process is achieved.
Step S4, combining the micro light emitting diode array 2 with the target substrate 5 through the first temporary substrate 3, so as to complete mass transfer.
In one implementation, the target substrate 5 is provided with a plurality of driving electrodes, and the arrangement manner of the driving electrodes may correspond to the arrangement manner of the micro light emitting diodes 21. The target substrate 5 may be a CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor control board) or TFT (Thin Film Transistor ) control board, and may be driven to operate by an active driving or passive driving manner.
In the embodiment of the application, the micro light emitting diode array 2 needs to be welded with the driving electrode on the target substrate 5 to be used normally, and in the first transfer, the electrode of the micro light emitting diode array 2 is combined with the first temporary substrate 3, so that the electrode in the target substrate 5 cannot be welded directly. Therefore, it is also necessary to transfer the micro light emitting diode array 2 to the target substrate 5 again through another temporary substrate. Referring to fig. 6 in combination, fig. 6 is a flowchart of sub-steps of step S4 provided in the embodiment of the present application. The mass transfer can be achieved through step S41 and step S42.
Step S41, bonding the micro light emitting diode array 2 located on the first temporary substrate 3 at a side away from the first temporary substrate 3 with the second temporary substrate 4, and separating the first temporary substrate 3 from the micro light emitting diode array 2.
Referring to fig. 7 and fig. 8 in combination, fig. 7 and fig. 8 are schematic diagrams corresponding to step S41 of the macro transfer method according to the embodiment of the present application. As shown in fig. 7, the substrate of the micro light emitting diode array 2 located at the side of the first temporary substrate 3 away from the first temporary substrate 3, i.e., the micro light emitting diode 21 is bonded with the second temporary substrate 4 through the second adhesive layer 20. Next, the first temporary substrate 3 is separated from the micro light emitting diode array 2, and further, a structure as shown in fig. 8 is obtained.
The second temporary substrate 4 is made of transparent, high-temperature resistant and heat-resistant materials, so that the second temporary substrate 4 can be conveniently combined with the micro light emitting diode array 2, and the second temporary substrate 4 is not affected when the first temporary substrate 3 is peeled off.
And S42, bonding the side, away from the second temporary substrate 4, of the micro light emitting diode array 2 positioned on the second temporary substrate 4 with the target substrate 5. Thus, the mass transfer of the micro light emitting diode array 2 is completed.
Referring to fig. 9 in combination, fig. 9 is a schematic diagram corresponding to step S42 of the macro transfer method according to the embodiment of the present application. After the first temporary substrate 3 is separated from the micro light emitting diode array 2, the micro light emitting diode array 2 located on the second temporary substrate 4 is combined with the target substrate 5 on the side away from the second temporary substrate 4, that is, the electrode of the micro light emitting diode 21 is correspondingly combined with the electrode in the target substrate 5, so as to complete mass transfer. In this way, the target substrate 5 is enabled to drive the micro light emitting diode 21 to operate.
In this embodiment, the micro led array 2 may be bonded to the first temporary substrate 3 through a first adhesive layer 10. The first adhesive layer 10 may be a photoresist layer, a thermal release layer, or a UV (ultraviolet) anti-adhesive layer, which has a proper adhesion and can be maintained stable in an etching solution, and can be weakened by heating or irradiation with light (ultraviolet) of a specific wavelength so as to facilitate a subsequent transfer operation.
Further, the bonding manner of the micro light emitting diode array 2 and the second temporary substrate 4 is not limited in the embodiment of the present application, and alternatively, the micro light emitting diode array 2 may be bonded to the second temporary substrate 4 through the second adhesive layer 20.
The second adhesive layer 20 has a stronger tackiness than the tackiness of the first adhesive layer 10 after the tackiness is weakened by the separation means. The second adhesive layer 20 may also be a glue layer that is weakened by means of heat or by means of irradiation with light of a specific wavelength (UV rays), for example a photoresist layer, a heat-peelable glue layer or a UV anti-adhesive layer.
However, it should be noted that, when selecting the material of the second adhesive layer 20 and the material of the first adhesive layer 10, materials that lose adhesion by irradiation with heat or light of a specific wavelength (ultraviolet rays) may be selected, respectively, for example, the first adhesive layer 10 may lose adhesion by heating but is insensitive to light of a specific wavelength (ultraviolet rays), and the second adhesive layer 20 may lose adhesion by irradiation with light of a specific wavelength (ultraviolet rays) but is insensitive to temperature.
Materials that lose tackiness by the same separation but have different sensitivities may also be selected. For example, the first adhesive layer 10 and the second adhesive layer 20 are both materials that lose adhesiveness by heating, but the second adhesive layer 20 is different in sensitivity to temperature from the first adhesive layer 10. In this way, the second adhesive layer 20 can be prevented from losing adhesion when the first temporary substrate 3 is separated from the micro light emitting diode array 2 by heating the first adhesive layer 10 or by light irradiation of a specific wavelength.
As an alternative embodiment, the first adhesive layer 10 may be an adhesive layer capable of reducing adhesion by heating, and accordingly, the first adhesive layer 10 may be heated to reduce adhesion of a region where the first adhesive layer 10 contacts the micro light emitting diode array 2, thereby separating the first temporary substrate 3 from the micro light emitting diode array 2.
For example, the micro light emitting diode 21 in the micro light emitting diode array 2 may be lighted, and the heat generated when the lighted micro light emitting diode 21 emits light heats the area where the first adhesive layer 10 contacts with it, and reduces the adhesion of the area where the first adhesive layer 10 contacts with the micro light emitting diode 21, so as to separate the first temporary substrate 3 from the micro light emitting diode array 2.
Optionally, after the micro light emitting diode 21 in the micro light emitting diode array 2 is turned on, the light emitting condition of the turned on micro light emitting diode array 2 may be further determined, and if the light emitting condition meets the requirement, then the micro light emitting diode array 2 on the side of the second temporary substrate 4 away from the second temporary substrate 4 is combined with the target substrate 5 to complete mass transfer. Otherwise, a batch of micro light emitting diode arrays 2 are replaced to repeat the steps, and the lighting is performed again, so that the quality detection and the mass transfer of the micro light emitting diodes 21 are combined, the quality detection is performed before the transfer, and the yield and the accuracy are improved.
Further, visual observation may be used to determine the lighting condition of the micro led array 2 that is lit. The luminous condition of the lightened micro light-emitting diode array 2 can be observed by means of infrared intensity detection and the like by using an infrared camera, and the production efficiency is improved under the condition of improving the yield. The specific principle and implementation of detecting the infrared intensity by using the infrared camera can refer to the prior art, and the embodiment of the present application will not be described in detail.
As another alternative embodiment, the first adhesive layer 10 may be an adhesive layer capable of reducing adhesion after being irradiated with light of a specific wavelength, such as ultraviolet rays, and accordingly, the adhesive force of the area where the first adhesive layer 10 contacts the micro led array 2 may be reduced by irradiating the first adhesive layer 10 with ultraviolet rays to separate the first temporary substrate 3 from the micro led array 2.
For example, a UV LED (ultraviolet light emitting diode) light source irradiator may be used to adjust the irradiation energy density of ultraviolet rays and irradiate the first adhesive layer 10 so that the first adhesive layer 10 fails and the adhesion of the area where the first adhesive layer 10 contacts the micro light emitting diode array 2 is reduced. To separate the first temporary substrate 3 from the micro light emitting diode array 2.
In the manner of irradiating the first adhesive layer 10 with ultraviolet rays to separate the first temporary substrate 3 from the micro led array 2, the manner of irradiating the entire first adhesive layer 10 may be adopted. For example, the first adhesive layer 10 between the micro led array 2 and the first temporary substrate 3 is irradiated such that the first adhesive layer 10 is totally deactivated to achieve total detachment. It is also possible to irradiate a specific position of the first adhesive layer 10, for example, a position of the first adhesive layer 10 connected to the micro led array 2, so as to achieve precise separation.
According to the mass transfer method provided by the embodiment of the application, the original substrate 1 is partially corroded, so that a space is reserved for conveniently supplying corrosive liquid. Then, the micro light emitting diode array 2 is bonded with the temporary substrate, and the original substrate 1 is continuously etched until the etching is completed. Finally, the array is placed on the target substrate 5 through the first temporary substrate 3 and the second temporary substrate 4, so that the mass transfer is completed, the probability of losing the micro light emitting diode array 2 in the mass transfer process is reduced, the displacement error is reduced, and the yield is improved.
The embodiment of the application also provides a manufacturing method of the display device, and the method for transferring the huge amount is adopted to realize the huge amount transfer of the micro light emitting diode array 2. The probability of losing the micro light emitting diode array 2 in the process of mass transfer is reduced, and displacement errors are reduced, so that the yield is improved.
Referring to fig. 10, the embodiment of the present application further provides a display device 100, and fig. 10 is a schematic diagram of the display device 100 according to the embodiment of the present application. The display device 100 is manufactured by the manufacturing method of the display device 100. The display device 100 includes a display panel 110, and the display panel 110 is formed by using the mass transfer method provided in the embodiments of the present application. The display device 100 may be a mobile phone as shown in the drawings, or may be a computer, a television, a watch, an intelligent wearable display device, etc., which is not limited in this embodiment of the present application.
In summary, the embodiments of the present application provide a mass transfer method, a manufacturing method of a display device 100, and the display device 100. The macro transfer method firstly carries out wet etching on the original substrate 1 with the micro light emitting diode array 2 so as to reduce the contact area between the micro light emitting diode array 2 and the original substrate 1. Next, the side of the micro light emitting diode array 2 remote from the original base 1 is bonded to a first temporary substrate 3. Then, wet etching is performed again on the original substrate 1 to peel off the micro light emitting diode array 2 from the original substrate 1, and the original substrate 1 is removed. Finally, the micro light emitting diode array 2 is combined with the target substrate 5 through the first temporary substrate 3, so as to complete mass transfer. The probability of losing the micro light emitting diode array 2 in the process of mass transfer is reduced, and displacement errors are reduced, so that the yield is improved.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims (8)
1. A method of mass transfer comprising:
wet etching is carried out on an original substrate provided with the micro light emitting diode array so as to reduce the contact area between the micro light emitting diode array and the original substrate; the micro light emitting diode array comprises a plurality of micro light emitting diodes which are sequentially arranged;
bonding a side of the micro light emitting diode array remote from the original base with a first temporary substrate; the first temporary substrate is used for temporarily fixing the micro light emitting diode array;
wet etching is carried out on the original substrate again, so that the micro light emitting diode array is stripped from the original substrate, and the original substrate is removed;
combining the micro light emitting diode array with a target substrate through the first temporary substrate to complete mass transfer;
the step of combining the micro light emitting diode array with a target substrate through the first temporary substrate includes:
bonding a side of the micro light emitting diode array located on the first temporary substrate, which is away from the first temporary substrate, to a second temporary substrate, and separating the first temporary substrate from the micro light emitting diode array;
bonding a side of the micro light emitting diode array located on the second temporary substrate away from the second temporary substrate with a target substrate; the driving electrodes are arranged on the target substrate and used for driving the micro light emitting diode array to work;
the micro light emitting diode array is combined with the first temporary substrate through a first adhesive layer, and the step of separating the first temporary substrate from the micro light emitting diode array comprises the following steps:
and lighting the micro light emitting diode in the micro light emitting diode array, and adopting visual observation to judge the lighting condition of the lighted micro light emitting diode array, and if the lighting condition meets the condition, heating the adhesion force of the area where the first adhesive layer is contacted with the micro light emitting diode array through the heat generated when the micro light emitting diode emits light so as to separate the first temporary substrate from the micro light emitting diode array.
2. The mass transfer method of claim 1, wherein the array of micro light emitting diodes is bonded to the first temporary substrate by a first adhesive layer, the step of separating the first temporary substrate from the array of micro light emitting diodes comprising:
and irradiating the first adhesive layer by using ultraviolet rays, and reducing the adhesive force of the area where the first adhesive layer is contacted with the micro light emitting diode array so as to separate the first temporary substrate from the micro light emitting diode array.
3. The mass transfer method according to claim 1 or 2, wherein the first adhesive layer is a glue layer capable of weakening the adhesiveness by means of heating or ultraviolet irradiation.
4. The mass transfer method of claim 1, wherein the array of micro light emitting diodes is bonded to the second temporary substrate by a second adhesive layer.
5. The mass transfer method of claim 4, wherein the second adhesive layer is a glue layer capable of weakening the adhesion by means of heating or ultraviolet irradiation.
6. The mass transfer method of claim 1, wherein the original substrate is made of a semiconductor material.
7. A method for manufacturing a display device, characterized in that the mass transfer of a micro light emitting diode array is realized by using the mass transfer method as claimed in any one of claims 1 to 6.
8. A display device manufactured by the method for manufacturing a display device according to claim 7.
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| CN111489991B (en) * | 2020-04-22 | 2023-12-01 | 京东方科技集团股份有限公司 | Display panel and manufacturing method |
| WO2021226945A1 (en) * | 2020-05-14 | 2021-11-18 | 重庆康佳光电技术研究院有限公司 | Transfer method and display device |
| CN112968078B (en) * | 2020-05-18 | 2022-03-01 | 重庆康佳光电技术研究院有限公司 | Micro light emitting diode transfer method and display device |
| CN113745137B (en) * | 2020-05-30 | 2023-12-19 | 华为机器有限公司 | Transfer method of micro light emitting diode and display panel |
| CN112967982B (en) * | 2020-09-10 | 2022-04-19 | 重庆康佳光电技术研究院有限公司 | Transfer substrate, manufacturing method of transfer substrate, chip transfer method and display panel |
| CN112967984B (en) * | 2020-09-24 | 2022-03-25 | 重庆康佳光电技术研究院有限公司 | Huge transfer method of microchip and display back plate |
| US20240019726A1 (en) * | 2020-10-30 | 2024-01-18 | Boe Technology Group Co., Ltd. | Mass transfer method for micro light-emitting diodes, and display panel |
| CN112968084A (en) * | 2021-02-04 | 2021-06-15 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN113582125B (en) * | 2021-07-21 | 2023-06-06 | 深圳清华大学研究院 | Super-slip packaging device and packaging method thereof |
| CN113611786B (en) * | 2021-08-02 | 2022-09-27 | 东莞市中麒光电技术有限公司 | LED chip bulk transfer method with high peeling yield and convenient film pouring |
| WO2023015569A1 (en) * | 2021-08-13 | 2023-02-16 | 重庆康佳光电技术研究院有限公司 | Micro-element structure and preparation method therefor, and method for transferring led chips |
| CN113990765B (en) * | 2021-12-28 | 2023-04-18 | 深圳市思坦科技有限公司 | Preparation method of flexible light-emitting device, flexible light-emitting device and light-emitting device |
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