CN108513684A - Method for shifting microelectronic component - Google Patents
Method for shifting microelectronic component Download PDFInfo
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- CN108513684A CN108513684A CN201780005600.9A CN201780005600A CN108513684A CN 108513684 A CN108513684 A CN 108513684A CN 201780005600 A CN201780005600 A CN 201780005600A CN 108513684 A CN108513684 A CN 108513684A
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- China
- Prior art keywords
- adhesive layer
- bonding film
- element chip
- bonding
- light
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- 238000000034 method Methods 0.000 title claims abstract description 62
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- 238000012546 transfer Methods 0.000 claims abstract description 44
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 claims description 33
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- DXPPIEDUBFUSEZ-UHFFFAOYSA-N 6-methylheptyl prop-2-enoate Chemical group CC(C)CCCCCOC(=O)C=C DXPPIEDUBFUSEZ-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229920000219 Ethylene vinyl alcohol Polymers 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920011250 Polypropylene Block Copolymer Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
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- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
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- 125000000217 alkyl group Chemical group 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
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- 239000012965 benzophenone Substances 0.000 description 1
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- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 229920005648 ethylene methacrylic acid copolymer Polymers 0.000 description 1
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- 239000012528 membrane Substances 0.000 description 1
- UNBDCVXGGDKSCP-UHFFFAOYSA-N methyl 2-methylidenetetradecanoate Chemical compound CCCCCCCCCCCCC(=C)C(=O)OC UNBDCVXGGDKSCP-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- ULDDEWDFUNBUCM-UHFFFAOYSA-N pentyl prop-2-enoate Chemical compound CCCCCOC(=O)C=C ULDDEWDFUNBUCM-UHFFFAOYSA-N 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Supply And Installment Of Electrical Components (AREA)
- Wire Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
The present invention relates to the methods for shifting microelectronic component comprising following steps：The multiple element chip being formed on a surface of chip is transferred to the adhesive layer of the first bonding film, first bonding film includes light-transparent substrate and the adhesive layer that is formed in light-transparent substrate；Selective exposure is carried out to another surface for shifting the adhesive layer of multiple element chip thereon by the light-transparent substrate of the first bonding film；And it is by making the multiple element chip on the first bonding film contact with the adhesive layer of the second bonding film that the multiple element chip on the first bonding film is selectively transfer, second bonding film includes light-transparent substrate and the adhesive layer that is formed in light-transparent substrate, wherein the unexposed portion of the adhesive layer of the first bonding film is more than the bonding force of element chip bonding force of the adhesive layer to element chip of the second bonding film, and the exposed portion of the adhesive layer of the first bonding film is less than the bonding force of element chip bonding force of the adhesive layer to element chip of the second bonding film.
Description
Technical field
Cross reference to related applications
This application claims the South Korea patent application 10- submitted to Korean Intellectual Property Office on December 26th, 2016
The equity of No. 2016-0179493 priority, the entire disclosure are incorporated herein by reference.
The present invention relates to the methods for shifting microelectronic component.
Background technology
Light emitting diode (LED) is the device for the material emission being wherein contained therein, and is partly led by what will be bonded
The energy that the electronics of body is generated with hole-recombination is converted into luminous energy and thus shines.
Currently, light emitting diode is widely used as lamp, display device and light source, and it is just in accelerated development.
Recently, the exploitation that the display device using micro- LED chip has been carried out shows high image quality to realize
Flexible display.The transfer techniques and transfer method for micro- LED chip are developed.
For example, U.S. Patent Application Publication No. 2013-0210194 is disclosed and a kind of is picked up from chip using electrostatic transfer head
The method for taking a part of micro element is formed with electrode in the electrostatic transfer head, voltage is made to be applied to the head being fabricated from a silicon
Portion.
However, according to this method, not only it is difficult to detect defect pixel after the completion of panel production, but also there are panel rulers
The low disadvantage of very little scalability.Additionally, there are need complicated LED preprocessing process to prevent the LED caused by electrostatic from damaging
Bad limitation.
It is also known that being picked up using the head using productions such as elastic polymer material such as dimethyl silicone polymers (PDMS)
The method for taking and shifting micro unit LED chip.However, there are such limitations：Individual adhesive layer is needed, and is needed independent
Process etc. persistently to keep bonding force during transfer process.
For the method for picking up and shifting well known micro- LED chip, there is the possibility that the LED caused by electrostatic is damaged
Property, it cannot substantially ensure transfer efficiency, or need expensive processing unit, therefore, it is difficult to ensure mass production.
Prior art document
Patent document
(patent document 1) U.S. Patent Application Publication No. 2013-0210194
(patent document 2) Korean Patent Application Publication the 2009-0098563rd
(patent document 3) Korean Patent Application Publication the 2005-0062886th
(patent document 4) Japanese patent application discloses No. 2006-0048393
Invention content
Technical problem
It is an object of the present invention to provide the method for shifting microelectronic component, the method can be selected more effectively
The LED chip of micro-dimension is selected and shifted without adding the process of expensive equipment or complexity, and prevents from being drawn by electrostatic, foreign matter etc.
The damage to LED component risen.
Technical solution
In this disclosure, the method for shifting microelectronic component is provided comprising following steps：It will be formed in
Multiple element chip on one surface of chip is transferred to the adhesive layer of the first bonding film, and first bonding film includes light transmission
Substrate and the adhesive layer being formed in light-transparent substrate；By the light-transparent substrate of the first bonding film to having shifted multiple element core thereon
Another surface of the adhesive layer of piece carries out selective exposure；And by making the multiple element chip on the first bonding film and
The adhesive layer contact of two bonding films is selectively transfer by the multiple element chip on the first bonding film, and second bonding film includes
Light-transparent substrate and the adhesive layer being formed in light-transparent substrate, wherein the unexposed portion of the adhesive layer of the first bonding film is to element core
The bonding force of piece is more than bonding force of the adhesive layer to element chip of the second bonding film, and the exposure of the adhesive layer of the first bonding film
Light part is less than the bonding force of element chip bonding force of the adhesive layer to element chip of the second bonding film.
Element chip can be micro- LED chip that size is 5 μm to 300 μm.
Size can be defined as the maximum gauge of micro- LED chip.
Adhesive layer of the unexposed portion of the adhesive layer of first bonding film to the bonding force and the second bonding film of element chip
Difference to the bonding force of element chip can be 5gf/25mm or bigger.
Adhesive layer pair of the exposed portion of the adhesive layer of first bonding film to the bonding force and the second bonding film of element chip
The difference of the bonding force of element chip can be 5gf/25mm or bigger.
More specifically, the unexposed portion of the adhesive layer of the first bonding film can be 50gf/ to the bonding force of element chip
The adhesive layer of 25mm to 800gf/25mm, the second bonding film can be 50gf/25mm to 800gf/ to the bonding force of element chip
25mm, and the exposed portion of the adhesive layer of the first bonding film is to the adhesive layer pair of the bonding force and the second bonding film of element chip
The difference of the bonding force of element chip can be 5gf/25mm or bigger.
In addition, the exposed portion of the adhesive layer of the first bonding film can be for 1gf/25mm extremely to the bonding force of element chip
100gf/25mm。
The step of carrying out selectivity exposure to the multiple element chip shifted by the light-transparent substrate of the first bonding film can
To use the photomask for being formed with the fine pattern that size is 5 μm to 300 μm thereon.
By the light-transparent substrate of the first bonding film to shifting another surface of the adhesive layer of multiple element chip thereon
The step of carrying out selectivity exposure may include with ultraviolet light with 10mJ/cm2To 10000mJ/cm2Exposure intensity irradiation thereon
Transfer has the step of another surface of adhesive layer of multiple element chip.
Light-transparent substrate can be the polymer that transmissivity in the wavelength region of 300nm to 600nm is 50% or bigger
Resin layer.
The adhesive layer of the adhesive layer of first bonding film and the second bonding film can respectively draw comprising adhesive, crosslinking agent and light
Send out agent.
The adhesive layer of the adhesive layer of first bonding film and the second bonding film can also include respectively polymeric additive, described
Polymeric additive is selected from following at least one polymer：Including the functional group based on (methyl) acrylate and nonpolar function
The polymer of group, the polymer based on (methyl) acrylate comprising at least one fluorine and include the organic of reactive functional groups
The polymer based on (methyl) acrylate of Si modification.
First bonding film and the second bonding film can also include respectively that the light transmission contacted with a surface of light-transparent substrate carries
Body substrate.
Method for shifting microelectronic component can also include by making the multiple element chip on the first bonding film
It is contacted the first bonding with the adhesive layer of the second bonding film (it includes light-transparent substrate and the adhesive layer that is formed in light-transparent substrate)
Before the selectively transfer step of multiple element chip on film, the exposure of the first bonding film exposed with chosen property is used
The photomask of the reversed image (reverse image) of pattern, via irradiation light-transparent substrate of the ultraviolet light by the second bonding film
The step of selectivity exposure is carried out to the adhesive layer of the second bonding film.
To element chip, the adhesive layer of the second bonding film of chosen property exposure can have the bonding than the first bonding film
The low bonding force of unexposed portion of layer.
Method for shifting microelectronic component can also include that will be selectively transferred to the adhesive layer of the second bonding film
Element chip is transferred to the step of printed circuit board.
The step of element chip for the adhesive layer for being selectively transferred to the second bonding film is transferred to printed circuit board may be used also
While element chip to be included in the adhesive layer for making to be selectively transferred to the second bonding film is in contact with each other with printed circuit board,
By the light-transparent substrate of the second bonding film to being bonded with another surface of the adhesive layer of selectively transfer element chip thereon
The step of being exposed.
To element chip, the adhesive layer of the second bonding film of chosen property exposure can have the bonding than the first bonding film
The low bonding force of unexposed portion of layer.
Method for shifting microelectronic component can also include that will be selectively transferred to the adhesive layer of the second bonding film
Element chip is transferred to the step of printed circuit board.
The step of element chip for the adhesive layer for being selectively transferred to the second bonding film is transferred to printed circuit board may be used also
While element chip to be included in the adhesive layer for making to be selectively transferred to the second bonding film is in contact with each other with printed circuit board,
By the light-transparent substrate of the second bonding film to being bonded with another surface of the adhesive layer of selectively transfer element chip thereon
The step of being exposed.
In a table of the printed circuit board contacted with the element chip for the adhesive layer for being selectively transferred to the second bonding film
It could be formed with anisotropic conductive film on face.
Advantageous effect
According to the present invention it is possible to provide the method for shifting microelectronic component, the method can be selected more effectively
LED chip with transfer micro-dimension prevents from being caused by electrostatic, foreign matter etc. without adding the process of expensive equipment or complexity
The damage to LED component.
Description of the drawings
Fig. 1 diagrammatically illustrates a reality of the method for the transfer microelectronic component of an embodiment according to the present invention
Example.
Fig. 2 diagrammatically illustrates another of the method for the transfer microelectronic component of an embodiment according to the present invention
Example.
Fig. 3 diagrammatically illustrates another of the method for the transfer microelectronic component of an embodiment according to the present invention
Example.
Fig. 4 diagrammatically illustrates another of the method for the transfer microelectronic component of an embodiment according to the present invention
Example.
Specific implementation mode
Hereinafter, will be described in further detail particular embodiment according to the present invention for shifting microelectronic component
Method.
However, provide the description of following embodiments for illustration purposes only, and the detail of the present invention not purport
It is limited by these embodiments.
An embodiment according to the present invention, can provide the method for shifting microelectronic component comprising following
Step：The multiple element chip being formed on a surface of chip is transferred to the adhesive layer of the first bonding film, described first
Bonding film includes light-transparent substrate and the adhesive layer that is formed in light-transparent substrate；By the light-transparent substrate of the first bonding film to turning thereon
Another surface for moving the adhesive layer for having multiple element chip carries out selective exposure；And it is more on the first bonding film by making
A element chip contacted with the adhesive layer of the second bonding film the multiple element chip on the first bonding film is selectively transfer, it is described
Second bonding film includes light-transparent substrate and the adhesive layer that is formed in light-transparent substrate, wherein the adhesive layer of the first bonding film does not expose
Light part is more than the bonding force of element chip bonding force of the adhesive layer to element chip of the second bonding film, and the first bonding
The exposed portion of the adhesive layer of film is less than bonding of the adhesive layer of the second bonding film to element chip to the bonding force of element chip
Power.
The inventors discovered that by using can be by exposing the bonding of the adhesive layer that controlled with its bonding force
Film is come the method that easily and effectively shifts microelectronic component.
Specifically, the multiple element chip being formed on a surface of chip is transferred to the first bonding film (it includes
Light-transparent substrate and the adhesive layer being formed in substrate) adhesive layer, and by the light-transparent substrate of the first bonding film to shifting thereon
There is another surface of the adhesive layer of multiple element chip to carry out selective exposure so that each portion of the adhesive layer of the first adhesive layer
The bonding force divided can change according to exposing patterns.In addition, making the second bonding film, (it includes being formed in gluing in light-transparent substrate
Close layer) adhesive layer contacted with another surface of the multiple element chip on the first bonding film, thus according to the difference of bonding force
It is different that selected element chip is only transferred to the second bonding film.
Here, the multiple element chip being formed on a surface of chip is transferred to the adhesive layer of the first bonding film,
And when the part of the adhesive layer to the first bonding film contacted with element chip to be transferred in multiple element chip is selected
When selecting property exposes, the part of the adhesive layer of the first bonding film of exposure is lower to the bonding force of element chip.
In addition, when making another surface of the adhesive layer and the multiple element chip on the first bonding film of the second bonding film connect
When touching, the exposed portion of the adhesive layer of the first bonding film is less than the adhesive layer of the second bonding film to member to the bonding force of element chip
The bonding force of part chip, therefore, the element core that will only can have been contacted with the adhesive layer of the first bonding film of chosen property exposure
Piece is transferred to the second bonding film.
Meanwhile in order to which only the element chip contacted with the adhesive layer of the first bonding film of chosen property exposure is transferred to
The unexposed portion of second bonding film, the adhesive layer of the first bonding film is more than the viscous of the second bonding film to the bonding force of element chip
Bonding force of the layer to element chip is closed, to the element that will only have been contacted with the adhesive layer of the first bonding film of chosen property exposure
Chip is transferred to the second bonding film, and allows the element core contacted with the adhesive layer of unexposed first bonding film of selectivity
Piece is retained on the first bonding film.
Adhesive layer of the unexposed portion of the adhesive layer of first bonding film to the bonding force and the second bonding film of element chip
The difference of the bonding force of element chip can be changed according to the type and size of used element chip.
However, for effectively and easily transfer element chip, the unexposed portion of the adhesive layer of the first bonding film is to member
The adhesive layer of the bonding force of part chip and the second bonding film to the difference of the bonding force of element chip can be 5gf/25mm or bigger,
Or 10gf/25mm to 50gf/25mm.
When bonding of the unexposed portion to the bonding force and the second bonding film of element chip of the adhesive layer of the first bonding film
When layer is too small to the difference of the bonding force of element chip, the element chip other than waiting for selectively transfer element chip can also
It is transferred to the second bonding film.
Adhesive layer pair of the exposed portion of the adhesive layer of first bonding film to the bonding force and the second bonding film of element chip
The difference of the bonding force of element chip can also change according to the type and size of used element chip, and it can be excellent
5gf/25mm or bigger or 10gf/25mm are selected as to 50gf/25mm.
When the first bonding film adhesive layer exposed portion to the adhesive layer of the bonding force and the second bonding film of element chip
When too small to the difference of the bonding force of element chip, wait for that selectively transfer element chip possibly can not be transferred to the second bonding
Film.
The unexposed portion of the adhesive layer of first bonding film is to the bonding force of element chip, the adhesive layer of the first bonding film
Exposed portion respectively can root to the bonding force of element chip to the bonding force of element chip and the adhesive layer of the second bonding film
It is glued between meeting them according to the actual conditions of the type and size of element chip and the method for shifting microelectronic component
Variation in the above range of resultant force difference.
For example, the unexposed portion of the adhesive layer of the first bonding film can be 50gf/25mm to the bonding force of element chip
Can be 50gf/25mm to 800gf/ to the bonding force of element chip to the adhesive layer of 800gf/25mm and the second bonding film
25mm。
Here, as described above, the unexposed portion of the adhesive layer of the first bonding film is more than the to the bonding force of element chip
The adhesive layer of two bonding films is to the bonding force of element chip, and the unexposed portion of the adhesive layer of the first bonding film is to element core
The adhesive layer of the bonding force of piece and the second bonding film can be 5gf/25mm or bigger to the difference of the bonding force of element chip.
In addition, the exposed portion of the adhesive layer of the first bonding film can be for 1gf/25mm extremely to the bonding force of element chip
100gf/25mm。
As defined herein, bonding force is defined as applying when width is bent 180 ° by the bonding sample of 25mm
Power (gf/25mm).
Meanwhile the method for shifting microelectronic component can be in the light-transparent substrate by the first bonding film to shifting thereon
Have in the step of another surface of the adhesive layer of multiple element chip carries out selectivity exposure using being formed with fine figure thereon
The photomask of case realizes that size is 5 μm to 300 μm of spacing.It therefore, can be to 5 μm of elements to 300 μm of micro-dimensions
Chip is shifted.
More specifically, the light-transparent substrate by the first bonding film carries out selective exposure to the multiple element chip shifted
The step of can use be formed with thereon size be 5 μm to 300 μm fine pattern photomask.
Element chip to be transferred can be micro- LED chip that size is 5 μm to 300 μm.
Meanwhile the multiple element chip shifted is selectively exposed in the light-transparent substrate by the first bonding film
In step, the bonding force of the adhesive layer of the first bonding film can be adjusted by controlling intensity and the time of exposure.
Specifically, by the light-transparent substrate of the first bonding film to shift thereon multiple element chip adhesive layer it is another
The step of a surface progress selectivity exposure may include with ultraviolet light with 10mJ/cm2To 10000mJ/cm2Exposure intensity shine
Penetrating transfer thereon has the step of another surface of adhesive layer of multiple element chip.
Simultaneously as the first bonding film includes light-transparent substrate in the method for shifting microelectronic component, therefore can be with
Another surface of adhesive layer to shifting multiple element chip thereon carries out selective exposure.
Although there is no limit for the concrete type and its characteristic of light-transparent substrate, in order to which selective exposure is effectively performed,
Light-transparent substrate can be the polymer resins layers that transmissivity in the wavelength region of 300nm to 600nm is 50% or bigger.
The type that may be used as the polymer resins layers of light-transparent substrate is not particularly limited, and for example, it can be packet
Containing polymer resins layers below：Polyester for example PET, cellulose such as triacetyl cellulose, the (co) polymer based on cyclic olefin,
Polyimides, styrene acrylonitrile copolymer (SAN), low density polyethylene (LDPE), linear polyethylene, medium density polyethylene, high density
Polyethylene, ultra-low density polyethylene, polypropylene random copolymer, polypropylene block copolymer, homopolypropylene, poly- methylpent
Alkene, vinyl-vinyl acetate copolymer, ethylene-methacrylic acid copolymer, ethylene methyl methacrylate copolymer, second
Alkene-ionomeric copolymers, ethylene-vinyl alcohol copolymer, polybutene, styrol copolymer, the mixture of both or more persons
Deng.
Meanwhile first bonding film adhesive layer and the second bonding film adhesive layer respectively can include adhesive, crosslinking agent
And photoinitiator.
It, can be without particular limitation using the polymer tree for the adhesive layer for becoming known for being formed cutting film as adhesive
Fat.It is, for example, possible to use wherein substitution has the fluoropolymer resin of scheduled reactive functional groups, or include reactive functional groups
Backbone polymerization resin.
Specifically, adhesive may include wherein at least monosubstituted having selected from hydroxyl, isocyanate group, vinyl and (first
Base) it at least one of acrylate-based functional group or the polymer based on (methyl) acrylate that is unsubstituted or is based on
The copolymer of (methyl) acrylate.
In addition, adhesive can be by being added into the side chain of (methyl) acrylate with carbon-to-carbon double bond
Acrylate and the intrinsic viscosity mixture obtained.
For example, as intrinsic viscosity mixture, can use by adding on the main chain to the resin based on (methyl) acrylate
The fluoropolymer resin that (methyl) acrylate-functional groups for adding 1 weight % to the amount of 45 weight % are obtained as side chain.
Adhesive may include the fluoropolymer resin that weight average molecular weight is 100000 to 1500000.
Specifically, wherein at least it is monosubstituted have selected from hydroxyl, isocyanate group, vinyl and (methyl) it is acrylate-based in
At least one functional group or the polymer based on (methyl) acrylate that is unsubstituted or be based on (methyl) acrylate
Copolymer weight average molecular weight can be 100000 to 1500000.
In this disclosure, (methyl) acrylate refers to both acrylate and (methyl) acrylate.
Polymer based on (methyl) acrylate or the copolymer based on (methyl) acrylate can be for example based on
The polymer or copolymer of the monomer of (methyl) acrylate and the monomer comprising crosslinkable functionality.
Here, the example of the monomer based on (methyl) acrylate includes (methyl) alkyl acrylate, more specifically wrap
Include it is below any one as with 1 to 12 carbon atom alkyl monomer：(methyl) amyl acrylate, (methyl) acrylic acid
N-butyl, (methyl) ethyl acrylate, (methyl) methyl acrylate, (methyl) Hexyl 2-propenoate, (methyl) n-octyl,
(methyl) Isooctyl acrylate monomer, (methyl) 2-EHA, (methyl) dodecylacrylate or (methyl) propylene
The mixture of sour last of the ten Heavenly stems ester or both or more person.
Due to the use of the monomer of the alkyl with big carbon number, the glass transition temperature of final copolymer reduces, because
This can select suitable monomer according to desired glass transition temperature.
In addition, the example of the monomer comprising crosslinkable functionality include it is below any one：Including the monomer of hydroxyl, including
The mixture of the monomer of carboxyl or monomer comprising nitrogen or both or more person.
Here, the example of the monomer comprising hydroxyl includes (methyl) acrylic acid 2- hydroxyl ethyl esters and (methyl) acrylic acid 2- hydroxypropyls
Ester, the example for wrapping carboxylic monomer include (methyl) acrylic acid etc., and include the example of the monomer of nitrogen include (methyl) third
Alkene nitrile, n-vinyl pyrrolidone and N- caprolactams, but not limited to this.
In view of improving other functions, such as compatibility, the resin based on (methyl) acrylate can also include comprising
The low molecular weight compound of carbon-to-carbon double bond, such as vinyl acetate, styrene or acrylonitrile.
In addition, consolidating added with the acrylate with carbon-to-carbon double bond wherein on the side chain of (methyl) acrylate
It can be 100000 to 1500000 to have the weight average molecular weight of adhesive.
When the weight average molecular weight for the fluoropolymer resin for including in adhesive is too low, the adhesive layer of the first bonding film and second
The respective coating characteristic of adhesive layer or cohesive force of bonding film may deteriorate, and residue is likely to remain on adherend, or
Person's adhesive layer when adhesive layer is stripped is likely to be broken.
In addition, when the weight average molecular weight for the fluoropolymer resin for including in adhesive is too high, the adhesive layer of the first bonding film
With the adhesive layer of the second bonding film may respectively be unable to fully that ultraviolet curing, therefore the adhesive layer during selectively exposing occurs
Power or peeling force may be unable to fully reduce, to make transfer yield deteriorate.
Included in the first bonding film adhesive layer and the second bonding film adhesive layer respectively in photoinitiator specific reality
There is no limit for example, and can use photoinitiator as known in the art without particular limitation.
For example, as photoinitiator, benzoin and its alkyl ether, acetophenone, anthraquinone, thioxanthones, ketal, two can be used
The mixture of Benzophenone, alpha-aminoacetophenone, acylphosphine oxide, oxime ester or both or more person.
The amount of photoinitiator can be by considering the physical property and characteristic and used viscous of produced adhesive layer
The type and characteristic of mixture determines.For example, the adhesive based on 100 parts by weight, the adhesive layer of the first bonding film and second glues
The adhesive layer for closing film can include respectively photoinitiator of 0.01 parts by weight to the amount of 8 parts by weight.
The adhesive layer of the adhesive layer of first bonding film and the second bonding film can include respectively curing agent.
When respectively coating Ranvier's membrane with the adhesive layer of the adhesive layer of the first bonding film and the second bonding film, curing agent can be with
It is formed at room temperature or with the reaction-ity group reaction of adhesive and is crosslinked at a temperature of 30 DEG C to 50 DEG C.
In addition, the predetermined reactants for including in curing agent can keep unreacted state, and can be before pickup
Other crosslinking is carried out to reduce the bonding force of adhesive layer by UV irradiations.
Curing agent may include it is selected from the following at least one：Compound based on isocyanates, the change based on aziridine
Close object, the compound based on epoxy and the compound based on metallo-chelate.
The amount of curing agent can pass through the physical property and characteristic of the produced adhesive layer of consideration and used bonding
The type and characteristic of agent determines.For example, the adhesive based on 100 parts by weight, the adhesive layer of the first bonding film and the second bonding
The adhesive layer of film can include respectively curing agent of 0.1 parts by weight to the amount of 30 parts by weight.
Meanwhile first bonding film adhesive layer and the adhesive layer of the second bonding film can also include respectively ultraviolet-curing
Compound.
The type of ultraviolet-curing compound is not particularly limited, can be used for example weight average molecular weight be about 500 to
300000 polyfunctional compound's (such as multifunctional urethane acrylate, polyfunctional acrylate monomer or oligomer etc.).
Those skilled in the art can be readily selected suitable compound according to desired use.
The amount of above-mentioned adhesive based on 100 parts by weight, ultraviolet-curing compound can be 5 parts by weight to 400 weights
Measure part, preferably 10 parts by weight to 200 parts by weight.It is viscous after solidification when the amount of ultraviolet-curing compound is less than 5 parts by weight
The reduction of resultant force is insufficient, this may make pickup deterioration in characteristics, and when the amount is more than 400 parts by weight, exist in ultraviolet light
Possible insufficient or stripping film of the cohesive force of the adhesive of pre-irradiation etc. may not allow easily peelable problem.
Meanwhile first bonding film adhesive layer and the second bonding film adhesive layer respectively can also include polymer add
Agent, the polymeric additive include at least one polymer selected from the following：Including the function based on (methyl) acrylate
The polymer of group and non-polar functional group, the polymer based on (methyl) acrylate comprising at least one fluorine and include reaction
The organic-silicon-modified polymer based on (methyl) acrylate of property functional group.
Including the polymer of functional group and non-polar functional group based on (methyl) acrylate, including at least one fluorine
Polymer based on (methyl) acrylate and organic-silicon-modified based on (methyl) acrylate comprising reactive functional groups
Polymer it is respectively more compatible with the adhesive in bonding layer surface, therefore can easily mix, in addition, existing for intramolecular
Scheduled nonpolar moiety is exposed to the top of the adhesive layer prepared by composition, to assign peel property and sliding properties.
Therefore, because nonpolar moiety is located on the surface of adhesive layer, polymeric additive can more effectively assign stripping
From characteristic and sliding properties, while by making transfer minimize with adhesive reaction.
Particularly, polymeric additive can be with the weight relative to adhesive 0.01% to 4.5% or 0.1% to 2%
Amount ratio uses, although and using relatively little of amount, by the adhesive layer of the adhesive layer and the second bonding film of the first bonding film
The peeling force of the adhesive layer of the cutting film respectively prepared can greatly increase.
Include the example of the commercial product of the polymer of functional group and non-polar functional group based on (methyl) acrylate
Including BYK0-350, BYK-352, BYK-354, BYK-355, BYK-356, BYK-358N, BYK-361N, BYK-380, BYK-
392 and BYK-394, but the specific example of polymeric additive is without being limited thereto.
Have with 1 to 10 including the polymer based on (methyl) acrylate of at least one fluorine may include wherein substitution
The polymer based on (methyl) acrylate of the perfluoroalkyl of a carbon atom or fluorinated alkenyl with 1 to 10 carbon atom.
Including the example of the commercial product of the polymer based on (methyl) acrylate of at least one fluorine includes
Ftergent 222F (being manufactured by Neos), F470 (being manufactured by DIC), F489 (being manufactured by DIC) and V-8FM, but polymer adds
The specific example of agent is without being limited thereto.
Including the organic-silicon-modified polymer based on (methyl) acrylate of reactive functional groups may include wherein
Substitution has at least one in alkylene alcohol, epoxy group, amino, mercapto or carboxyl selected from hydroxyl, with 1 to 10 carbon atom
The organic-silicon-modified polymer based on (methyl) acrylate of a reactive functional groups.
Include the more specific examples of the organic-silicon-modified polymer based on (methyl) acrylate of reactive functional groups
Organic-silicon-modified polyacrylate including hydroxyl-functional.The example of its commercial product includes BYK SIL-CLEAN 3700
Deng, but the specific example of polymeric additive is without being limited thereto.
Meanwhile first bonding film and the second bonding film can also include respectively contacted with a surface of light-transparent substrate it is saturating
Light carrier substrates.
The light-transparent substrate that first bonding film and the second bonding film include respectively may be used as semiconductor devices or display
Carrier substrates in part, it is also possible to include selectively saturating according to the technology type of manufacturing process and required process conditions
Light carrier substrates.
There is no limit can be used for example glass or light penetrating copolymer resin film to the type of light-transparent carrier substrate.More specifically
Ground, it is glass or the light penetrating copolymer tree of 50% or bigger that can use the transmissivity in the wave-length coverage of 300nm to 600nm
Fat.
Meanwhile in order to expose the first bonding film by selectivity come during the process of selectively transfer multiple element chip
It more effectively shifts, can only will to enhance by via exposed portion changing the bonding force of the adhesive layer of the second bonding film
During the element chip contacted with the adhesive layer of the first bonding film of chosen property exposure is transferred to the process of the second bonding film
Efficiency and accuracy.
More specifically, the method for shifting microelectronic component can also include multiple on the first bonding film by making
The adhesive layer of element chip and the second bonding film (it includes light-transparent substrate and the adhesive layer that is formed in light-transparent substrate) contacts will
Before the selectively transfer step of multiple element chip on first bonding film, the first bonding exposed with chosen property is used
The photomask of the reversed image of the exposing patterns of film, it is viscous by the light-transparent substrate pair second of the second bonding film via irradiation ultraviolet light
The adhesive layer for closing film carries out the step of selectivity exposes.
It is selected by the adhesive layer of the second bonding film of light-transparent substrate pair of the second bonding film via irradiation ultraviolet light
Property exposure the step of in, can use and be glued in the light-transparent substrate by the first bonding film to having shifted multiple element chip thereon
Another surface for closing layer carries out the exposure method etc. used in the step of selectivity exposes.
The selective exposed portion of the adhesive layer of second bonding film has the unexposed portion of the adhesive layer than the first bonding film
Divide to the lower bonding force of element chip, the element chip to only contact the first bonding film exposed with chosen property shifts
To the second bonding film, and allow the adhesive layer with the adhesive layer and the second bonding film of unexposed first bonding film of selectivity
Selective exposed portion contact element chip be retained on the first bonding film.
Meanwhile the method for shifting microelectronic component can also include that will transfer to the element chip turn of the second bonding film
The step of moving to printed circuit board.
In the method for shifting microelectronic component, can with desired pattern form and size transfer element chip,
Such as size is 5 μm to 300 μm of micro- LED chip etc., therefore can easily will transfer to the element chip of the second bonding film
It is transferred to the printed circuit board for being designed to have predetermined shape and size.
In the step of element chip that will transfer to the second bonding film is transferred to printed circuit board, this field can be used
In well known device and equipment.For example, can by the difference of the bonding force between anisotropic conductive film and the second bonding film,
Or the difference of the bonding force between second bonding film that bonding force reduces after anisotropic conductive film and exposure is turned
It moves.
Meanwhile in the step that the element chip for being selectively transferred to the adhesive layer of the second bonding film is transferred to printed circuit board
In rapid, selectively transfer element chip can directly be bonded with printed circuit board, and in element chip and printed circuit board
In the state of contact, due to by making ultraviolet (uv) transmission to the opposed surface for the second bonding film for being bonded with element thereon, second
The bonding force of the adhesive layer of bonding film reduces, therefore the transfer of element chip to printed circuit board can be more effectively carried out.
Specifically, the element chip for the adhesive layer for being selectively transferred to the second bonding film is transferred to the step of printed circuit board
Suddenly the element chip and printed circuit board that can also be included in the adhesive layer for making to be selectively transferred to the second bonding film are in contact with each other
While, by the light-transparent substrate of the second bonding film to be bonded with thereon selectively transfer element chip adhesive layer it is another
The step of a surface is exposed.
There is no limit for the specific example of printed circuit board, and can use common RPCB or FPCB.
In a table of the printed circuit board contacted with the element chip for the adhesive layer for being selectively transferred to the second bonding film
It could be formed with anisotropic conductive film on face.
Hereinafter, will be described in detail with reference to the accompanying drawings the particular embodiment of the present invention for shifting microelectronic component
Method.
As shown in Figure 1, by the multiple element chip being formed on a surface of chip movement (1) and it is made to contact first
The adhesive layer (2) of bonding film (it includes light-transparent substrate and the adhesive layer that is formed in light-transparent substrate), and can be according to bonding
The bonding force of layer is transferred to the adhesive layer (3) of the first bonding film by multiple element chip on the wafer is formed.It is formed in chip
A surface on multiple element chip be respectively graded and so that they can be transferred to the bonding of the first bonding film
The intensity of layer is bonded on chip.
In addition it is possible to use the photomask of the pattern with predetermined shape and size irradiates ultraviolet light.At this point it is possible to according to
The pattern of photomask by the light-transparent substrate of the first bonding film to shift thereon multiple element chip adhesive layer another
Surface carries out selective exposure (4).
In addition, when the portion of the adhesive layer to the first bonding film contacted with element chip to be transferred in multiple element chip
When dividing progress selectivity exposure, a part for the adhesive layer of the first bonding film of exposure reduces the bonding force of element chip, and
And when making the adhesive layer of the second bonding film be contacted with another surface of multiple element chip, the adhesive layer of the first bonding film
Exposed portion becomes bonding force smaller of the adhesive layer than the second bonding film to element chip to the bonding force of element chip, thus
The element chip that the adhesive layer for the first bonding film that only transfer is exposed with chosen property is in contact.
I.e., it is possible to by making the viscous of the second bonding film (it includes light-transparent substrate and the adhesive layer that is formed in light-transparent substrate)
It closes layer contact and is transferred to the multiple element chip of the first bonding film, according to exposed portion by the bonding layer-selective of the second bonding film
It shifts (4,5 and the 6 of Fig. 1).
In addition, making the element chip for being selectively transferred to the adhesive layer of the second bonding film and according to anisotropic conductive film
The printed circuit board contact of pattern positioning, and it is possible thereby to the element chip is transferred to printed circuit board (7, the 8 of Fig. 1
With 9).
Meanwhile as shown in Fig. 2, in embodiment in shifting the method for microelectronic component, being glued by making first
Close multiple element chip on film and the second bonding film (it includes light-transparent substrate and the adhesive layer that is formed in light-transparent substrate)
Adhesive layer contact will can use before the selectively transfer step of the multiple element chip on the first bonding film with chosen
Property exposure the first bonding film exposing patterns reversed image photomask, via irradiation ultraviolet light pass through the second bonding film
The adhesive layer of the second bonding film of light-transparent substrate pair carries out selective exposure (the 4 of Fig. 2).
In this regard, due to via irradiation bonding of the ultraviolet light by the second bonding film of light-transparent substrate pair of the second bonding film
Layer carries out selective exposure, and the bonding force of the selective exposed portion of the adhesive layer of the second bonding film reduces.Therefore, by using
The photomask of the reversed image of the exposing patterns of the first bonding film with the exposure of chosen property makes exposed with chosen property the
The element chip of the adhesive layer contact of one bonding film is contacted with the selective unexposed portion of the adhesive layer of the second bonding film.
As shown in Fig. 2, the photomask of the reversed image of the exposing patterns of the first bonding film with the exposure of chosen property is
It refers to form the exposure opposite with the exposing patterns of the first bonding film that chosen property exposes on the adhesive layer of the second bonding film
The photomask of light pattern.
Meanwhile as shown in Fig. 2, the first semiconductor film and the second semiconductor film respectively can also include light-transparent carrier substrate,
Such as glass or light penetrating copolymer resin film.
In addition, as shown in figure 3, in embodiment in shifting the method for microelectronic component, will be selectively transfer
To the adhesive layer of the second bonding film element chip be transferred to printed circuit board after, can be with by reusing the second bonding film
The element chip being formed on the first bonding film is selectively retransferred.
At this point it is possible to by moving photomask or the light transmission of the first bonding film being located in photomask of different shapes
The lower part pair of substrate and the adhesive layer of the first bonding film of the lower contacts for the element chip not shifted previously are exposed.
In addition, similar with Fig. 1 and Fig. 2, when to the adhesive layer of the first bonding film with it is to be transferred in multiple element chip
When the part of element chip contact carries out selectivity exposure, a part for the adhesive layer of the first bonding film of exposure is to element chip
Bonding force reduce, and when make the second bonding film adhesive layer contact the first bonding film on multiple element chip another
When surface contacts, the exposed portion of the adhesive layer of the first bonding film becomes more viscous than the second bonding film to the bonding force of element chip
Bonding force smaller of the layer to element chip is closed, is contacted to the adhesive layer for the first bonding film that only transfer is exposed with chosen property
Element chip.
Meanwhile as shown in figure 4, be selectively transferred to the element chip 1 of the adhesive layer of the second bonding film with printed circuit
Plate 2 contact while with transmitting UV in the opposed surface for the second bonding film for being bonded with device thereon, to reduce second
The bonding force of the adhesive layer of bonding film, therefore printed circuit board can be easily transferred to.
With the light-transparent substrate by the second bonding film to be bonded with selectively transfer element chip adhesive layer it is another
One surface is exposed, and the bonding force of the adhesive layer of the second bonding film can greatly reduce, therefore, can be easily and effectively
It is simultaneously transferred to printed circuit board without the use of individual stripping process from the second bonding film or is used for by selection element chip
In addition the device of transfer.
Claims (17)
1. a kind of method for shifting microelectronic component includes the following steps：
The multiple element chip being formed on a surface of chip is transferred to the adhesive layer of the first bonding film, described first is viscous
It includes light-transparent substrate and the adhesive layer that is formed in the light-transparent substrate to close film；
By the light-transparent substrate of first bonding film to shift thereon the multiple element chip the adhesive layer it is another
One surface carries out selective exposure；And
Described first is glued by making the multiple element chip on first bonding film be contacted with the adhesive layer of the second bonding film
The multiple element chip closed on film is selectively transfer, and second bonding film includes light-transparent substrate and is formed in the light-transparent substrate
On adhesive layer,
The wherein described element chip is micro- LED chip,
The unexposed portion of the adhesive layer of first bonding film is more than described second to the bonding force of the element chip and bonds
The adhesive layer of film to the bonding force of the element chip, and
The exposed portion of the adhesive layer of first bonding film is less than second bonding film to the bonding force of the element chip
Adhesive layer to the bonding force of the element chip.
2. the method according to claim 1 for shifting microelectronic component, wherein
Bonding force and second bonding film of the unexposed portion of the adhesive layer of first bonding film to the element chip
Adhesive layer be 5gf/25mm or bigger to the difference of the bonding force of the element chip.
3. the method according to claim 1 for shifting microelectronic component, wherein
Bonding force and second bonding film of the exposed portion of the adhesive layer of first bonding film to the element chip
Adhesive layer is 5gf/25mm or bigger to the difference of the bonding force of the element chip.
4. the method according to claim 1 for shifting microelectronic component, wherein
The unexposed portion of the adhesive layer of first bonding film to the bonding force of the element chip be 50gf/25mm extremely
800gf/25mm,
The adhesive layer of second bonding film is 50gf/25mm to 800gf/25mm to the bonding force of the element chip, and
Bonding force and second bonding film of the exposed portion of the adhesive layer of first bonding film to the element chip
Adhesive layer is 5gf/25mm or bigger to the difference of the bonding force of the element chip.
5. the method according to claim 1 for shifting microelectronic component, wherein
The exposed portion of the adhesive layer of first bonding film is 1gf/25mm to 100gf/ to the bonding force of the element chip
25mm。
6. the method according to claim 1 for shifting microelectronic component, wherein
The step that the multiple element chip shifted is selectively exposed by the light-transparent substrate of first bonding film
It is rapid to use the photomask for being formed with the fine pattern that size is 5 μm to 300 μm thereon.
7. the method according to claim 1 for shifting microelectronic component, wherein
There is another of the adhesive layer of the multiple element chip to transfer by the light-transparent substrate of first bonding film
Surface carries out the step of selectivity exposure
Including with ultraviolet light with 10mJ/cm2To 10000mJ/cm2Exposure intensity irradiation thereon transfer have the multiple element core
The step of another surface of the adhesive layer of piece.
8. the method according to claim 1 for shifting microelectronic component, wherein
The light-transparent substrate is that the transmissivity in the wavelength region of 300nm to 600nm is 50% or the fluoropolymer resin of bigger
Layer.
9. the method according to claim 1 for shifting microelectronic component, wherein
The adhesive layer of the adhesive layer of first bonding film and second bonding film respectively contains adhesive, crosslinking agent and light and draws
Send out agent.
10. the method according to claim 9 for shifting microelectronic component, wherein
The adhesive layer of the adhesive layer of first bonding film and second bonding film also includes respectively polymeric additive, described
Polymeric additive includes at least one polymer selected from the following：Including the functional group based on (methyl) acrylate and non-pole
The polymer of property functional group, the polymer based on (methyl) acrylate comprising at least one fluorine and include reactive functional groups
The organic-silicon-modified polymer based on (methyl) acrylate.
11. the method according to claim 1 for shifting microelectronic component, wherein
Will be described by making the multiple element chip on first bonding film contact with the adhesive layer of second bonding film
Before the selectively transfer step of multiple element chip on first bonding film, second bonding film includes light-transparent substrate and shape
At the adhesive layer in the light-transparent substrate,
The method further includes the reversed image using the exposing patterns of first bonding film with the exposure of chosen property
Photomask carries out the adhesive layer of second bonding film by the light-transparent substrate of second bonding film via irradiation ultraviolet light
The step of selectivity exposure.
12. the method according to claim 11 for shifting microelectronic component, wherein
To the element chip, the adhesive layer of second bonding film of chosen property exposure has than first bonding film
The low bonding force of the unexposed portion of adhesive layer.
13. the method according to claim 1 for shifting microelectronic component,
Further include that the element chip for the adhesive layer for being selectively transferred to second bonding film is transferred to printed circuit board
The step of.
14. the method according to claim 13 for shifting microelectronic component, wherein
The step of element chip for the adhesive layer for being selectively transferred to second bonding film is transferred to printed circuit board
Further include in the element chip for making to be selectively transferred to the adhesive layer of second bonding film and the printed circuit
While plate is in contact with each other, by the light-transparent substrate of second bonding film to being bonded with the selectively transfer element thereon
The step of another surface of the adhesive layer of chip is exposed.
15. the method according to claim 13 for shifting microelectronic component, wherein
In the printed circuit board contacted with the element chip for the adhesive layer for being selectively transferred to second bonding film
A surface on be formed with anisotropic conductive film.
16. the method according to claim 1 for shifting microelectronic component, wherein
The size of micro- LED chip is 5 μm to 300 μm.
17. the method according to claim 1 for shifting microelectronic component, wherein
First bonding film and second bonding film further include respectively contacted with a surface of the light-transparent substrate it is saturating
Light carrier substrates.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0179493 | 2016-12-26 | ||
| KR1020160179493A KR20180075310A (en) | 2016-12-26 | 2016-12-26 | Method of transferring micro electronic device |
| PCT/KR2017/015381 WO2018124664A1 (en) | 2016-12-26 | 2017-12-22 | Method for transferring micro electric element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108513684A true CN108513684A (en) | 2018-09-07 |
Family
ID=62710414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780005600.9A Pending CN108513684A (en) | 2016-12-26 | 2017-12-22 | Method for shifting microelectronic component |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2019506737A (en) |
| KR (1) | KR20180075310A (en) |
| CN (1) | CN108513684A (en) |
| TW (1) | TWI658340B (en) |
| WO (1) | WO2018124664A1 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI658340B (en) | 2019-05-01 |
| KR20180075310A (en) | 2018-07-04 |
| JP2019506737A (en) | 2019-03-07 |
| WO2018124664A1 (en) | 2018-07-05 |
| TW201830169A (en) | 2018-08-16 |
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