JP2009065191A5 - - Google Patents

Description

Manufacturing method of dicing die bonding tape

The present invention relates to a dicing die bonding tape manufacturing method used to manufacture semiconductor chips, and more particularly is bonded to a semiconductor wafer, a method of manufacturing a dicing die a bonding tape used during dicing and during die bonding .

  Conventionally, a dicing die bonding tape is used to cut out a semiconductor chip from a semiconductor wafer and mount the semiconductor chip on a substrate or the like.

  As an example of the dicing die bonding tape, Patent Document 1 below discloses a dicing die bonding tape in which a radiation curable pressure-sensitive adhesive layer is laminated on one surface of a film adhesive layer. The film adhesive layer includes a thermoplastic resin and an epoxy resin. The film adhesive layer corresponds to a die bonding film. The radiation curable pressure-sensitive adhesive layer is a radiation curable dicing film.

  When a semiconductor chip is manufactured using the dicing die bonding tape described in Patent Document 1, a semiconductor wafer is first bonded to the surface of the die bonding film opposite to the surface on which the dicing film is laminated. Next, the semiconductor wafer is diced together with the die bonding film. After dicing, the radiation curable dicing film is irradiated with radiation to cure the dicing film. When the dicing film is cured, its adhesive strength is lowered. Thereafter, the die bonding film to which the semiconductor chip is bonded is peeled off from the dicing film and taken out. And the semiconductor chip is mounted on the substrate via the die bonding film.

  By the way, at the time of dicing, in order to perform dicing stably, the die bonding film needs to be firmly bonded to the dicing film. On the other hand, when picking up a semiconductor chip after dicing, the die bonding film with a semiconductor chip must be peeled off from the dicing film without difficulty. Therefore, in Patent Document 1, a radiation-curing dicing film that has high adhesive strength before irradiation with radiation and is cured after irradiation with radiation to decrease adhesive strength has been used.

  On the other hand, a dicing die bonding tape including a dicing film that is not a radiation curable dicing film is also known.

  For example, Patent Document 2 below discloses a dicing die bonding tape in which a base film (II) is laminated on one side of a film adhesive layer. A film adhesive layer consists of a resin composition containing thermoplastic resins, such as a polyimide or an acryl-type polymer, and a thermosetting resin. The film adhesive layer corresponds to a die bonding film. As the dicing film, a polypropylene film, a polyethylene film or a polyethylene terephthalate film is used. The base film (II) corresponds to a dicing film.

In Patent Document 2, the surface of the dicing film attached to the die bonding film is subjected to a mold release process so that the die bonding film with a semiconductor chip can be peeled off from the dicing film without difficulty after dicing.
JP 2004-292281 A JP 2006-165074 A

  The dicing die bonding tape described in Patent Document 1 uses a radiation curable dicing film that cures when irradiated with radiation and has reduced adhesive strength. However, when a radiation curable dicing film is used, it is necessary to irradiate the dicing film with radiation after the dicing to cure the dicing film and reduce its adhesive strength. Therefore, the work of irradiating radiation had to be performed.

  Furthermore, even if the dicing film is irradiated with radiation, the adhesive strength of the dicing film may not be sufficiently reduced. When the die bonding film with a semiconductor chip is peeled off from the dicing film in a state where the adhesive strength of the dicing film is not sufficiently lowered, an extra force tends to be applied to the semiconductor chip. As a result, the semiconductor chip may be damaged.

  On the other hand, in the dicing die-bonding tape described in Patent Document 2, the dicing film is subjected to a mold release treatment in order to improve the peelability. Therefore, it is not necessary to irradiate radiation when picking up the semiconductor chip. However, when producing this dicing die-bonding tape, it has been necessary to perform a release treatment such as applying a release agent on the surface of the dicing film or forming irregularities on the surface of the die bonding film. .

  Furthermore, when a release agent is applied to the surface of the dicing film, the release agent tends to adhere to the die bonding film. In this case, the picked-up semiconductor chip may not be reliably mounted on the substrate. On the other hand, when unevenness is formed on the surface of the dicing film, the die bonding film and the dicing film may not be sufficiently adhered, and the die bonding film may peel off from the dicing film during dicing. It was.

  Furthermore, in Patent Document 2, since a polypropylene film, a polyethylene film, or a polyethylene terephthalate film is used as a dicing film, cutting scraps are easily generated when a semiconductor chip is picked up. When cutting waste is generated, the semiconductor chip may not be reliably picked up. In addition, cutting waste may adhere to the die bonding film or the semiconductor chip, and the picked-up semiconductor chip may not be mounted on the substrate with high accuracy and in the correct orientation.

SUMMARY OF THE INVENTION In view of the above-described conventional state of the art, the object of the present invention is to easily dice a semiconductor wafer together with a die bonding film without irradiating light when dicing the semiconductor wafer and picking up the semiconductor chip together with the die bonding film. and peeling is to provide a method of manufacturing a dicing die bonding tape that allows to retrieve.

According to the present invention, a step of forming a non-adhesive film by irradiating or heating the entire composition for a non-adhesive film containing a (meth) acrylic acid resin crosslinked body as a main component, and one side of the non-adhesive film And a step of bonding the die bonding film to the other surface of the non-adhesive film so that the peeling force of the die bonding film from the non-adhesive film is in the range of 1 N to 15 N / m. A method of manufacturing a dicing die bonding tape is provided.

On the specific situation with the manufacturing method of the dicing die-bonding tape of this invention, the elongation at the breaking point of the said non-adhesive film shall be in the range of 5-100%. In this case, when the dicing blade is used for dicing, cutting scraps are hardly generated.

In another specific aspect of the manufacturing method of the dicing die bonding tape of the present invention, the surface energy of the surface of the non-adhesive film on which the die bonding film is affixed is 40 N / m or less. In this case, the die bonding film can be more easily peeled from the non-adhesive film. Furthermore, since the adhesiveness at the interface between the die bonding film and the non-adhesive film is low, a part of the die bonding film is chipped and separated as a film piece during peeling, and the film piece adheres to the non-adhesive film. This can be suppressed.

In still another specific aspect of the manufacturing method of the dicing die bonding tape of the present invention, the surface of the non-adhesive film to which the die bonding film is attached is not subjected to release treatment.

  The (meth) acrylic resin crosslinked product preferably contains a (meth) acrylic acid ester polymer having an alkyl group having 1 to 18 carbon atoms. The acid value of the (meth) acrylic acid ester polymer is preferably 2 or less. The (meth) acrylic acid ester polymer is more preferably a (meth) acrylic acid ester polymer obtained by polymerizing at least one of butyl acrylate and ethyl acrylate.

In another specific aspect of the manufacturing method of the dicing die bonding tape of the present invention, the die bonding film is made of a thermosetting resin composition.

In still another specific aspect of the manufacturing method of the dicing die bonding tape of the present invention, the storage elastic modulus at 25 ° C. before thermosetting of the die bonding film is in the range of 10 ⁶ to 10 ⁹ Pa.

  The die bonding film preferably includes an epoxy resin, a polymer having a functional group that reacts with an epoxy group, and a thermosetting agent. More preferably, the die bonding film contains 10 to 100 parts by weight of a polymer having a functional group that reacts with the epoxy group with respect to 100 parts by weight of the epoxy resin.

A semiconductor chip manufacturing method using the dicing die bonding tape obtained by the dicing die bonding tape manufacturing method of the present invention comprises the steps of preparing the dicing die bonding tape of the present invention and a semiconductor wafer, and dicing A step of bonding a semiconductor wafer to a surface of the die bonding tape opposite to the surface of the die bonding film to which the non-adhesive film is attached; and a step of bonding the semiconductor wafer to which the dicing die bonding tape is bonded to the die bonding film. Dicing and dividing into individual semiconductor chips, and after dicing, peeling off the die bonding film to which the semiconductor chip is bonded from the non-adhesive film and taking out the semiconductor chip together with the die bonding film. Wherein the obtaining a method for manufacturing a semiconductor chip.

Also, good Mashiku, in the step of taking out the semiconductor chip after the dicing, the die bonding film and the non-adhesive without changing the release force between the film, the semiconductor chip is taken out.

  In this specification, not changing the peeling force means, for example, a step of changing the peeling force by lowering the adhesive force by curing any layer of the dicing die bonding tape by light irradiation or heating, or This means that the process of changing the peeling force, such as the step of contracting any layer to change the peeling force, or the step of foaming any layer to change the peeling force, is not performed.

According to the manufacturing method of the present invention , it is possible to provide a dicing die bonding tape that exhibits the following effects. That is, in the dicing die bonding tape, a non-adhesive film is affixed to the die bonding film, and the non-adhesive film contains a (meth) acrylic resin crosslinked body as a main component. Can be peeled off. Accordingly, when the semiconductor chip is taken out together with the die bonding film after dicing, the semiconductor chip is hardly damaged.

  Moreover, the die bonding film with a semiconductor chip can be easily peeled off from the non-adhesive film without taking out work such as light irradiation after dicing.

  Furthermore, in the present invention, the die bonding film can be easily peeled off from the non-adhesive film even if the non-adhesive film is not subjected to the release treatment. Therefore, it is not necessary to perform an extra work of applying a release agent or forming irregularities on the surface of the dicing film. Since it is not necessary to apply a release agent to the surface of the dicing film, the release agent does not adhere to the die bonding film. Moreover, since it is not necessary to form an unevenness | corrugation on the surface of a dicing film, the adhesiveness of a die-bonding film and a non-adhesive film cannot fall easily. Therefore, dicing can be performed stably.

According to the method of manufacturing a dicing die bonding tape of the present invention, the dicing die bonding tape can be provided . After the semiconductor wafer to which the dicing die bonding tape is bonded is diced and divided into individual semiconductor chips. The semiconductor chip may be picked up by peeling the die bonding film to which the semiconductor chip is bonded from the non- adhesive film . Therefore , a part of the die bonding film is chipped and is difficult to separate as a film piece, and the film piece is difficult to adhere to the non-adhesive film. Therefore, since the die bonding film without a chip | tip is joined to the obtained semiconductor chip, die bonding can be performed still more reliably.

  Hereinafter, the present invention will be clarified by describing specific embodiments of the present invention with reference to the drawings.

  1 (a) and 1 (b) show a dicing die bonding tape according to an embodiment of the present invention in a partially cutaway front sectional view and a partially cutaway plan view.

  As shown in FIGS. 1A and 1B, a dicing die bonding tape 1 has a long release film 2. On the upper surface 2a of the release film 2, a die bonding film 3, a non-adhesive film 4 and a dicing film 5 are laminated in this order. The surface 3a to which the release film 2 of the die bonding film 3 is attached is a surface to which the semiconductor wafer is bonded.

  The die bonding film 3, the non-adhesive film 4 and the dicing film 5 have a circular planar shape. The dicing film 5 has a larger diameter than the die bonding film 3 and the non-adhesive film 4. The diameter of the die bonding film 3 is made equal to the diameter of the non-adhesive film 4. However, both diameters may be different.

  The dicing film 5 has the base material 5a and the adhesive 5b apply | coated to the single side | surface of the base material 5a. The dicing film 5 is affixed from the adhesive 5b side to the surface 4b of the non-adhesive film 4 opposite to the surface 4a to which the die bonding film 3 is affixed. The dicing film 5 is indirectly attached to the die bonding film 3 via the non-adhesive film 4.

  Since the dicing film 5 has a larger diameter than the die bonding film 3 and the non-adhesive film 4, the dicing film 5 has outer peripheral edges of the die bonding film 3 and the non-adhesive film 4 as shown in FIG. It has the extension part 5c extended so that it may exceed. One surface of the extension portion 5c is attached to the upper surface 2a of the release film 2 with an adhesive 5b. That is, the dicing film 5 is stuck on the upper surface 2 a of the release film 2 in a region outside the outer peripheral edges of the die bonding film 3 and the non-adhesive film 4.

  The dicing film 5 has a larger diameter than the die bonding film 3 and the non-adhesive film 4 because the adhesive 5b located in the extension 5c is bonded to the surface 3a of the die bonding film 3 when the semiconductor wafer is bonded. This is for attaching a dicing ring.

  As shown in FIG.1 (b), in the length direction of the elongate release film 2, the several laminated body which consists of the die bonding film 3, the non-adhesive film 4, and the dicing film 5 is arrange | positioned at equal intervals. Yes. In addition, in the area | region of the side of the dicing film 5, although not necessarily provided, the protective sheets 6 and 7 are provided in the upper surface 2a of the release film 2. As shown in FIG. When the protective sheets 6 and 7 are provided, the pressure applied to the die bonding film 3, the non-adhesive film 4 and the dicing film 5 when the dicing die bonding tape 1 is wound in a roll shape, for example, is protected. It is reduced by the presence of the sheets 6 and 7.

  In addition, the thickness and shape of the release film 2 are not particularly limited. For example, a square-shaped release film may be used. In that case, only one laminated body which consists of a die-bonding film, a non-adhesive film, and a dicing film may be arrange | positioned on a release film. Moreover, the said laminated body does not need to be wound by roll shape as mentioned above with this release film. Further, the thickness and shape of the die bonding film, non-adhesive film and dicing film are not particularly limited.

  In the dicing die bonding tape 1, when the semiconductor chip with the die bonding film 3 is taken out, the peeling force between the die bonding film 3 and the non-adhesive film 4 is smaller than the peeling force between the non-adhesive film 4 and the dicing film 5. It is preferable that In this case, the die bonding film 3 is easily peeled from the non-adhesive film 4 at the interface between the two. Therefore, the semiconductor chip together with the die bonding film 3 can be more easily separated from the non-adhesive film 4 and taken out.

The die bonding film 3 for each semiconductor chip, and peeled off from the non-adhesive film 4, when taken out, the peel strength between the die-bonding film 3 and the non-adhesive film 4 is not more than 15N / m, or less 8N / m good preferred, more preferably not more than 6N / m. If the peel strength is too high, it may be difficult to peel the die bonding film 3 from the non-adhesive film 4. Lower limit of the peel strength is 1N / m. If the peel strength is too low, jumping of the semiconductor chip is likely to occur during dicing.

(Non-adhesive film)
The non-adhesive film 4 is provided to peel the die bonding film 3 from the non-adhesive film 4 at the interface between the die bonding film 3 and the non-adhesive film 4.

  The non-adhesive film 4 has non-adhesiveness. In the present specification, the “non-adhesive film” includes not only a film whose surface does not have adhesiveness but also a film which does not stick to the surface when touched with a finger. Specifically, “non-adhesive” in “non-adhesive film” means that when the non-adhesive film is attached to a stainless steel plate and the non-adhesive film is peeled off at a peeling speed of 300 mm / min, the peeling force is 5 g. / 25mm width or less.

  The feature of this embodiment is that the non-adhesive film 4 contains a (meth) acrylic resin crosslinked body as a main component.

  In the dicing die-bonding tape described in Patent Document 1 described above, the dicing film is made of a radiation curable adhesive, and the adhesive strength of the dicing film before irradiation with radiation is relatively high. Therefore, in order to peel the die bonding film from the dicing film, it is necessary to sufficiently reduce the adhesive strength of the dicing film. Therefore, an extra effort to irradiate the dicing film with radiation is required. Furthermore, the adhesive strength may not be sufficiently reduced after irradiation with radiation.

  On the other hand, in the dicing die bonding tape 1 of the present embodiment, the non-adhesive film contains the (meth) acrylic resin crosslinked body as a main component, so that the die bonding film 3 is easily peeled from the non-adhesive film 4. be able to. Furthermore, when the semiconductor chip is taken out together with the die bonding film 3 after dicing, the semiconductor chip is hardly damaged.

  Moreover, in the dicing die bonding tape as described in Patent Document 2 described above, the surface of the dicing film to which the die bonding film is attached has been subjected to a release treatment in order to improve the peelability. Therefore, it has been necessary to perform a release treatment that applies a release agent to the surface of the dicing film or forms irregularities. When a release agent is applied to the dicing film, the release agent may adhere to the die bonding film. Moreover, when unevenness was formed on the surface of the dicing film, the die bonding film tended to peel from the dicing film during dicing.

  Furthermore, in Patent Document 2, a polypropylene film, a polyethylene film, or a polyethylene terephthalate film has been used as a dicing film. When such a film was used, cutting waste was easily generated during dicing.

  On the other hand, in the dicing die bonding tape 1 of the present embodiment, the die bonding film 3 can be easily peeled from the non-adhesive film 4 even if the non-adhesive film 4 is not subjected to the release treatment. Therefore, it is not necessary to perform an extra work of applying a release agent or forming irregularities on the surface of the dicing film 5. Since it is not necessary to apply a release agent to the surface of the dicing film 5, the release agent does not adhere to the die bonding film 3. Moreover, since it is not necessary to form an unevenness | corrugation in the surface of the non-adhesion film 4, dicing can also be performed stably. Furthermore, in the dicing die-bonding tape 1 of the present embodiment, cutting scraps are hardly generated during dicing.

  The main component of the non-adhesive film 4 is a crosslinked (meth) acrylic resin. In this case, the non-adhesive film 4 contains 50% by weight or more of a (meth) acrylic resin crosslinked body. The non-adhesive film 4 containing the (meth) acrylic resin crosslinked body as a main component is softer than the polyolefin film, and has, for example, a low storage elastic modulus. Further, by using the (meth) acrylic resin cross-linked body, it is possible to prevent the interface between the non-adhesive film 4 and the die bonding film 3 from being fused, and to make it difficult to cause defects during pick-up. Further, by reducing the breaking elongation of the non-adhesive film 4, the cutting waste is shattered when dicing with a dicing blade, so that the discharge performance is improved and the generation of whiskery-like cutting waste can be suppressed. . Therefore, when the non-adhesive film 4 containing a (meth) acrylic resin crosslinked body as a main component is used, the machinability during dicing and the peelability after dicing are improved. Moreover, by selecting the (meth) acrylic resin crosslinked body as the main component, the polarity of the non-adhesive film 4 can be lowered, the elastic modulus can be lowered, and the elongation at break can be easily controlled.

  In the present invention, “(meth) acryl” means “methacrylic acid or acrylic acid”.

  Although it does not specifically limit as a material which comprises the non-adhesion film 4, A photocurable resin may be sufficient, or a thermosetting resin may be sufficient. When the photocurable resin or thermosetting resin is used, the non-adhesive film 4 is formed by photocuring or thermosetting. In the formed non-adhesive film 4, it is desirable that the curing of these resins has already been completed. If the curing of the resin is not completed, for example, when dicing with laser light, the non-adhesive film 4 may be melted by the laser light and attached to the dicing film 3.

  Further, in manufacturing the semiconductor chip, preferably, the pick-up is performed without changing the peeling force of the die bonding film 3 with respect to the non-adhesive film 4 after dicing. In this case, it is desirable that the non-adhesive film 4 is not cured by light irradiation or the like. Therefore, in the non-adhesive film 4 formed using the photo-curable resin or the thermosetting resin, these curable resins are It is desirable that it has already been cured.

  As a material constituting the non-adhesive film 4, in addition to the (meth) acrylic resin crosslinked body, other synthetic resins such as an epoxy resin, a urethane resin, a silicone resin, or a polyimide resin may be used.

  Although it does not specifically limit as said (meth) acrylic resin crosslinked body, (meth) acrylic acid ester polymer is preferable. When the main component of the non-adhesive film 4 is a (meth) acrylic acid ester polymer, when the die bonding film 3 is peeled from the non-adhesive film 4 after dicing, chipping of the die bonding film 3 is further less likely to occur. Moreover, the machinability at the time of dicing and the peelability after dicing are further improved. Furthermore, when a (meth) acrylic acid ester polymer is used, the storage elastic modulus and elongation at break can be easily controlled.

  Although it does not specifically limit as said (meth) acrylic acid ester polymer, The (meth) acrylic acid ester polymer which has a C1-C18 alkyl group is preferable. When a (meth) acrylic acid ester polymer having an alkyl group having 1 to 18 carbon atoms is used, the polarity is sufficiently lowered, the surface energy of the non-adhesive film 4 can be lowered, and the peelability is further improved. Can be increased. If the alkyl group has more than 18 carbon atoms, solution polymerization may be difficult, and production of the non-stick film 4 may be difficult. The number of carbon atoms of the alkyl group is more preferably 6 or more, thereby further reducing the polarity.

  As the (meth) acrylic acid ester polymer, a (meth) acrylic acid alkyl ester monomer having an alkyl group having 1 to 18 carbon atoms is used as a main monomer, and this is combined with a functional group-containing monomer and, if necessary, these. A (meth) acrylic acid ester polymer obtained by copolymerizing with other polymerizable monomers capable of polymerization by a conventional method is preferred. In this case, the number of carbon atoms of the alkyl group of the (meth) acrylic acid alkyl ester monomer is more preferably 2 or more, and particularly preferably 6 or more.

  The weight average molecular weight of the (meth) acrylic acid ester polymer is preferably in the range of 200,000 to 2,000,000. If it is less than 200,000, a large amount of appearance defects may occur at the time of coating molding, and if it exceeds 2 million, it may become too thick at the time of production to make it impossible to take out the polymer solution.

  The modifying monomer is not particularly limited, but is preferably not a monomer containing a carboxyl group. When the monomer containing a carboxyl group is used, the polarity of the non-adhesive film 4 is increased, which may adversely affect the pickup property.

  Examples of the monomer that can be used as the modifying monomer include butadiene, styrene, isoprene, and acrylonitrile having a double bond.

  Although it does not specifically limit as said (meth) acrylic-acid alkylester monomer, It obtained by esterification reaction of the primary or secondary alkyl alcohol which has a C1-C18 alkyl group, and (meth) acrylic acid. (Meth) acrylic acid alkyl ester monomers are preferred.

  Specific examples of the (meth) acrylic acid alkyl ester monomer include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, and (meth) acrylic acid. Examples include n-butyl, t-butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, octyl (meth) acrylate, or lauryl (meth) acrylate. Of these, (meth) acrylic acid alkyl ester monomers having an alkyl group with 4 or more carbon atoms are particularly preferred. A (meth) acrylic-acid alkylester monomer may be used independently and 2 or more types may be used together.

  The acid value of the (meth) acrylic acid ester polymer as the main component of the non-adhesive film 4 is desirably 2 or less. When the acid value is 2 or less, the surface energy can be reduced and the peelability can be further enhanced.

  The method for adjusting the acid value to 2 or less is not particularly limited. However, as the modifying monomer, a method in which a monomer containing a carboxyl group is not used, or an ester hydrolysis is not caused in the polymerization reaction process. A method of adjusting the reaction is preferred.

  In the present specification, the acid value is the number of milligrams of potassium hydroxide required to neutralize the free acid contained in 1 g of (meth) acrylic acid ester polymer.

  The non-adhesive film 4 has a double bondable group capable of reacting with an acrylic group in addition to the (meth) acrylic resin crosslinked body as the main component, has a weight average molecular weight in the range of 500 to 50,000, and is made of glass. It is preferable to further include an oligomer having a transition point Tg of 25 ° C. or lower. When this oligomer is used, the peelability of the die bonding film 3 with respect to the non-adhesive film 4 is further improved. Moreover, the breaking elongation of the non-adhesive film 4 can be easily designed in the range of 5 to 100%. When the weight average molecular weight of the oligomer is less than 500, the effect of blending the oligomer may not be sufficiently obtained, and when it exceeds 50000, the peelability of the die bonding film 3 with respect to the non-adhesive film 4 may be reduced. is there.

  The oligomer is not particularly limited, but preferably has a flexible skeleton such as a polyether skeleton, a polyester skeleton, a butadiene skeleton, a polyurethane skeleton, a silicate skeleton, or a dicyclopentadiene skeleton. The skeleton having flexibility means a skeleton having a Tg of 25 ° C. or less.

  The oligomer is more preferably an acrylic oligomer having a polyether skeleton or a polyester skeleton. Examples of the acrylic oligomer having a polyether skeleton or a polyester skeleton include polypropylene oxide diacrylate or polyether urethane acryl oligomer. Examples of the commercially available products include M-225 (manufactured by Toa Gosei Co., Ltd.), UN-7600 (manufactured by Negami Kogyo Co., Ltd.) and the like.

  The double bond group capable of reacting with the acrylic group of the oligomer is not particularly limited, and examples thereof include an acrylic group, a methacryl group, a vinyl group, and an allyl group. Of these, an acrylic group is preferable. The oligomer preferably has two or more double bondable groups capable of reacting with an acrylic group.

  In addition, two double bond groups capable of reacting with the acrylic group may be present at both ends of the molecule, or may be present in the middle of the molecular chain. Among them, it is preferable that two double bondable groups capable of reacting with the acrylic group exist only at both ends of the molecule, and it is more preferable that two acrylic groups exist only at both ends of the molecule. Moreover, it is also preferable that the double bondable group which can react with the said acrylic group exists in the both terminal and molecular chain of a molecule | numerator.

  Examples of the polyether skeleton include a polypropylene oxide skeleton and a polyethylene oxide skeleton.

  Examples of the acrylic oligomer having a polyether skeleton and having an acrylic group only at both ends of the molecule include polypropylene oxide diacrylate or polyester-based urethane acrylic oligomer. Examples of the commercially available products include UA340P and UA4200 (all are manufactured by Nakamura Chemical Co., Ltd.); Aronix M-1600 and Aronix M-220 (all are manufactured by Toa Gosei Co., Ltd.).

  Moreover, a 3-10 functional urethane acrylic oligomer is used suitably as said acrylic oligomer. When the urethane acrylic oligomer has 3 to 10 functionalities, the skeleton has appropriate flexibility. When the urethane acrylic oligomer is less than trifunctional, the flexibility is too low, and beard-like cutting waste is easily generated when the die bonding film 3 is cut. During the cutting, the die bonding film 3 may be contaminated.

  Examples of the 3 to 10 functional urethane acrylic oligomer include a urethane oxide oligomer having a polypropylene oxide main chain. As a commercial item of the said 3-10 functional urethane acrylic oligomer, U-2PPA, U-4HA, U-6HA, U-15HA, UA-32P, U-324A U-108A, U-200AX, UA-4400, UA-2235PE, UA-160TM, UA-6100 (all manufactured by Shin-Nakamura Chemical Co., Ltd.); UN-7600, UN-7700, UN-333, UN-1255 (all manufactured by Negami Industrial Co., Ltd.), etc. Is mentioned.

  The blending ratio of the oligomer is not particularly limited, but is preferably 1 part by weight or more with respect to 100 parts by weight of the (meth) acrylic acid ester polymer in order to obtain the effect of blending the oligomer. A preferred upper limit is 50 parts by weight. When there are too many said oligomers, a raw material will not melt | dissolve and manufacture of the non-adhesive film 4 may become impossible.

  When using an oligomer having an acrylic group at both ends, the blending ratio of the oligomer is preferably 1 to 100 parts by weight and more preferably 1 to 50 parts by weight with respect to 100 parts by weight of the (meth) acrylic acid ester polymer. preferable. In the case of a polyfunctional urethane acrylic oligomer, the blending ratio of the oligomer is preferably 1 to 50 parts by weight and more preferably 1 to 30 parts by weight with respect to 100 parts by weight of the (meth) acrylic acid ester polymer.

  When using a photocurable resin or a thermosetting resin to form the non-adhesive film 4, it is necessary to use a photoreaction initiator or a thermal reaction initiator to pre-cure the resin by light irradiation or heating. is there. It does not specifically limit as a photoinitiator, For example, a photoradical generator, a photocation generator, etc. can be used. Examples of the thermal reaction initiator include a thermal radical generator.

  Although it does not specifically limit as said photoradical generating agent, As what is marketed, for example, Irgacure 184, Irgacure 2959, Irgacure 907, Irgacure 819, Irgacure 651, Irgacure 369, Irgacure 379 (all are Ciba-special Benzoin methyl ether; benzoin ethyl ether; benzoin isopropyl ether; lucillin TPO (manufactured by BASF Japan) and the like.

  As the photocation generator, onium salts such as aromatic diazonium salts, aromatic halonium salts, and aromatic sulfonium salts; organometallic complexes such as iron-allene complexes, titanocene complexes, and arylsilanol-aluminum complexes can be used. .

  Examples of the thermal radical generator include cumene hydroperoxide, diisopropylbenzene peroxide, di-t-butyl peroxide, lauryl peroxide, benzoyl peroxide, t-butylperoxyisopropyl carbonate, and t-butylperoxy-2- Organic peroxides such as ethylhexanoate and t-amylperoxy-2-ethylhexanoate; 2,2′-azobis (isobutyronitrile), 1,1′-azobis (cyclohexanecarbonitrile), 2 , 2′-azobis (2,4-dimethylvaleronitrile), azo compounds such as dimethyl 2,2′-azobis (2-methylpropionate), and the like.

  It is preferable that the non-adhesive film 4 further contains a filler. By including the filler, the machinability is further improved. Therefore, it is possible to suppress the attachment of notch scraps to the die bonding film 3 and the semiconductor chip.

  The average particle diameter of the filler is preferably 0.1 to 10 μm, more preferably 0.1 to 5 μm. If the average particle size is too large, the in-plane thickness of the non-adhesive film 4 may vary, and if it is too small, the machinability may not be sufficiently improved.

  The filler is not particularly limited, and silica or alumina is used. The blending ratio of the filler is preferably 0.1 to 150 parts by weight with respect to a total of 100 parts by weight of the material constituting the non-adhesive film 4 excluding the filler. If the blending ratio of the filler is too large, the non-adhesive film 4 may break during expansion, and if it is too small, the machinability may not be sufficiently improved.

  Moreover, the non-adhesive film 4 may further contain an ultraviolet absorber. When the ultraviolet absorber is contained, the die bonding film 3 can be easily laser-diced.

As a method for producing the non-adhesive film 4, after the material constituting the non-adhesive film 4 is applied on the release film, light irradiation and / or heating is performed, and the non-adhesive film 4 is formed on the release film. The method of peeling a release film is mentioned.

  Although the thickness of the non-adhesive film 4 is not specifically limited, 30-100 micrometers is preferable. When the thickness is less than 30 μm, sufficient expandability may not be obtained, and when the thickness exceeds 100 μm, it may be difficult to obtain a uniform thickness. If the thickness varies, dicing may not be performed properly when a semiconductor chip is manufactured.

  The surface energy of the surface 4a to which the die bonding film 3 of the non-adhesive film 4 is attached is preferably 40 N / m or less. When the non-adhesive film 4 has non-adhesiveness and the surface energy of the surface 4a is 40 N / m or less, the die bonding film 3 can be more easily peeled from the non-adhesive film 4. Furthermore, at the time of peeling, a part of the die bonding film is chipped and separated as a film piece, and the film piece hardly adheres to the non-adhesive film 4. Therefore, chipping of the die bonding film 3 is difficult to occur, so that die bonding can be performed more reliably.

  The surface energy of the surface 4a of the non-adhesive film 4 is more preferably in the range of 30 to 35 N / m. If the surface energy is too high, peeling failure may occur during pick-up, and if it is too low, chip fly may occur due to water pressure during dicing.

  The surface energy can be measured according to JIS K6798 using, for example, a wettability reagent.

  The non-adhesive film 4 preferably has a storage elastic modulus at 23 ° C. in the range of 1 to 1000 MPa. When the storage elastic modulus is less than 1 MPa, the expandability may be lowered, and when it exceeds 1000 MPa, the pickup property may be lowered. More preferably, it is 10-1000 MPa.

  The preferable lower limit of the elongation at the breaking point of the non-adhesive film 4, that is, the breaking elongation is 5%, and the more preferable lower limit is 10%. When the elongation at break is 5% or more, the expandability is enhanced, and the pickup performance of the semiconductor chip is further enhanced. The upper limit with preferable breaking elongation of the non-adhesive film 4 is 100%. If the elongation at break exceeds 100%, generation of whisker-like cutting waste during dicing may not be sufficiently suppressed. A more preferable upper limit of the breaking elongation of the non-adhesive film 4 is 60%.

  The (meth) acrylate polymer is obtained by crosslinking a component containing at least one of butyl acrylate and ethyl acrylate because it has a relatively low glass transition temperature and excellent flexibility. (Meth) acrylic acid ester polymers are preferred. In this case, the adhesion of the non-adhesive film 4 to the die bonding film 3 and the machinability are improved.

(Die bonding film)
The die bonding film 3 is cut along with the semiconductor wafer during dicing. The die bonding film 3 is taken out together with the semiconductor chip after dicing and used for die bonding of the semiconductor chip.

  The die bonding film 3 is formed using, for example, a curable resin composition containing an appropriate curable resin. The curable composition before curing is sufficiently soft and thus easily deforms by external force. However, after obtaining the semiconductor chip, the semiconductor chip can be firmly bonded to an adherend such as a substrate by applying heat and light energy to the die bonding film 3 and curing it. Although it does not specifically limit as curable resin, A thermoplastic resin, a thermosetting resin, or a photocurable resin etc. are mentioned.

  Although it does not specifically limit as said thermoplastic resin, For example, poly (meth) acrylic acid ester resin, polyester resin, polyvinyl alcohol resin, or polyvinyl acetate resin etc. are mentioned. These thermoplastic resins may be used independently and 2 or more types may be used together.

  Although it does not specifically limit as said thermosetting resin, For example, an epoxy resin or a polyurethane resin etc. are mentioned. These thermosetting resins may be used alone or in combination of two or more.

  Although it does not specifically limit as said photocurable resin, For example, the epoxy resin containing photocationic catalysts, such as photosensitive onium salt, the acrylic resin which has a photosensitive vinyl group, etc. are mentioned. These photocurable resins may be used alone or in combination of two or more.

  As the curable resin, a hot-melt adhesive resin such as a poly (meth) acrylate resin having a main monomer unit such as epoxy resin, polyester resin, methyl methacrylate or butyl acrylate is particularly preferably used.

  The die bonding film 3 is more preferably made of a thermosetting resin composition. The die bonding film 3 preferably includes an epoxy resin, a polymer having a functional group that reacts with an epoxy group, and a thermosetting agent. In this case, the bonding reliability between the semiconductor chip and the substrate bonded using the die bonding film 3 or between the plurality of semiconductor chips is further enhanced. An epoxy resin is generally generated by a ring opening reaction of a relatively low molecular weight polymer (prepolymer) having a molecular weight of about 300 to 8000 having two or more epoxy groups in one molecule. Shows a thermosetting resin.

  The die bonding film 3 preferably contains 10 to 100 parts by weight of a polymer having a functional group that reacts with an epoxy group with respect to 100 parts by weight of the epoxy resin. The blending ratio of the polymer is more preferably 15 to 50 parts by weight. If the amount of the polymer is too large, the fluidity may be insufficient, resulting in poor adhesion between the die bonding film 3 and the wafer, or the generation of whisker-like cutting waste during dicing may be increased. If the amount of the high molecular polymer is too small, an appearance defect may be caused when the die bonding film 3 is formed.

  The epoxy resin is not particularly limited, but an epoxy resin having a polycyclic hydrocarbon skeleton in the main chain is preferable. When an epoxy resin having a polycyclic hydrocarbon skeleton in the main chain is used, it becomes rigid and the movement of the molecule is hindered, so that the mechanical strength and heat resistance of the cured product are enhanced and the moisture resistance is also enhanced.

  The epoxy resin having the polycyclic hydrocarbon skeleton in the main chain is not particularly limited. For example, an epoxy resin having a dicyclopentadiene skeleton such as dicyclopentadiene dioxide and a phenol novolac epoxy resin having a dicyclopentadiene skeleton. (Hereinafter referred to as “dicyclopentadiene type epoxy resin”), 1-glycidylnaphthalene, 2-glycidylnaphthalene, 1,2-diglycidylnaphthalene, 1,5-diglycidylnaphthalene, 1,6-diglycidylnaphthalene, 1 , 7-diglycidylnaphthalene, 2,7-diglycidylnaphthalene, triglycidylnaphthalene, epoxy resin having a naphthalene skeleton such as 1,2,5,6-tetraglycidylnaphthalene (hereinafter referred to as “naphthalene type epoxy resin”) , Tetrahydroxy Eniruetan type epoxy resins, tetrakis (glycidyloxyphenyl) ethane or 3,4-epoxy-6-methylcyclohexyl-3,4-epoxy-6-methylcyclohexane carbonate and the like, can be mentioned. Of these, dicyclopentadiene type epoxy resins and naphthalene type epoxy resins are preferably used.

  These epoxy resins having a polycyclic hydrocarbon skeleton in the main chain may be used alone or in combination of two or more. Moreover, the said dicyclopentadiene type | mold epoxy resin and naphthalene type | mold epoxy resin may each be used independently, and both may be used together.

  The minimum with a preferable weight average molecular weight of the epoxy resin which has the said polycyclic hydrocarbon skeleton in a principal chain is 500, and a preferable upper limit is 1000. When the weight average molecular weight is less than 500, the mechanical strength, heat resistance and / or moisture resistance of the cured product after curing may not be sufficiently improved. When the weight average molecular weight exceeds 1000, the cured product is rigid. May become too brittle.

  Although it does not specifically limit as a high molecular polymer which has a functional group which reacts with the said epoxy group, For example, the polymer which has an amino group, a urethane group, an imide group, a hydroxyl group, a carboxyl group, or an epoxy group is mentioned. Among these, a polymer having an epoxy group is preferable. When a polymer having an epoxy group is used, the flexibility of the cured product is improved.

  In addition, when an epoxy resin having a polycyclic hydrocarbon skeleton in the main chain and a polymer having an epoxy group are used, the cured product can be machined by the epoxy resin having the polycyclic hydrocarbon skeleton in the main chain. Strength, heat resistance, and moisture resistance are enhanced, and flexibility is also enhanced by the polymer having the epoxy group.

  The molecular weight of the polymer having an epoxy group is in the range of 100,000 to 2,000,000 in terms of weight average molecular weight. The polymer having an epoxy group is not particularly limited as long as it is a polymer having an epoxy group at the terminal and / or side chain (pendant position). For example, an epoxy group-containing acrylic rubber, an epoxy group-containing polymer Examples thereof include butadiene rubber, bisphenol type high molecular weight epoxy resin, epoxy group-containing phenoxy resin, epoxy group-containing acrylic resin, epoxy group-containing urethane resin, and epoxy group-containing polyester resin. Especially, since the mechanical strength and heat resistance of hardened | cured material can be improved, an epoxy-group-containing acrylic resin is used suitably. These polymer polymers having an epoxy group may be used alone or in combination of two or more.

  The thermosetting agent is not particularly limited. For example, a thermosetting acid anhydride curing agent such as trialkyltetrahydrophthalic anhydride, a phenolic curing agent, an amine curing agent, and a latent such as dicyandiamide. For example, a cationic curing agent or a cationic catalyst-type curing agent. These thermosetting agents may be used alone or in combination of two or more.

  Among the above-mentioned thermosetting agents, a thermosetting curing agent that is liquid at normal temperature and a latent curing agent such as dicyandiamide that is multifunctional and may be added in a small amount equivalently are preferably used. By using such a hardening | curing agent, the softness | flexibility at normal temperature of the die-bonding film before hardening is improved, and handling property is improved.

  Typical examples of the thermosetting curing agent that is liquid at room temperature include acid anhydrides such as methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylnadic anhydride, or trialkyltetrahydrophthalic anhydride. A physical curing agent is mentioned. Of these, methylnadic acid anhydride and trialkyltetrahydrophthalic anhydride are preferably used because they are hydrophobized. These acid anhydride curing agents may be used alone or in combination of two or more.

  In the said thermosetting resin composition, in order to adjust a cure rate, the physical property of hardened | cured material, etc., you may use a hardening accelerator together with the said thermosetting agent.

  Although it does not specifically limit as said hardening accelerator, For example, an imidazole type hardening accelerator, a tertiary amine type hardening accelerator, etc. are mentioned. Of these, an imidazole-based curing accelerator is preferred because it is easy to control the reaction system for adjusting the curing speed and the physical properties of the cured product. These hardening accelerators may be used independently and 2 or more types may be used together.

  Although it does not specifically limit as said imidazole series hardening accelerator, For example, the brand name "2MAOK-PW which protected the basicity with 1-cyanoethyl-2-phenylimidazole which protected 1st-position of imidazole with the cyanoethyl group, or isocyanuric acid. (Shikoku Kasei Kogyo Co., Ltd.). These imidazole type hardening accelerators may be used independently and 2 or more types may be used together.

  When an acid anhydride curing agent and a curing accelerator such as an imidazole curing accelerator are used in combination, the addition amount of the acid anhydride curing agent is equal to or less than the theoretically required equivalent to the equivalent of the epoxy group. It is preferable to do. If the addition amount of the acid anhydride curing agent is excessive more than necessary, moisture may easily elute chlorine ions from the cured product of the thermosetting resin composition. For example, when elution components are extracted from the cured product after curing using hot water, the pH of the extracted water is lowered to about 4 to 5, and a large amount of chloride ions extracted from the epoxy resin is eluted. Sometimes.

  In addition, when an amine curing agent and a curing accelerator such as an imidazole curing accelerator are used in combination, the addition amount of the amine curing agent may be less than or equal to the theoretically required equivalent to the epoxy group. preferable. If the addition amount of the amine-based curing agent is excessive more than necessary, chlorine ions may be easily eluted by moisture from the cured product of the thermosetting resin composition. For example, when elution components are extracted from the cured product after curing using hot water, the pH of the extracted water becomes basic and the chloride ions extracted from the epoxy resin may be eluted in large quantities. .

  The method for forming the thermosetting resin composition into a film and obtaining the die bonding film 3 is not particularly limited, and a die coater, a lip coater, a comma coater, a gravure coater, or the like is used. Among these, a gravure coater is preferable because the thickness accuracy of the die bonding film is improved and streaks are hardly formed even if foreign matter is mixed.

The storage elastic modulus at 25 ° C. before curing of the die bonding film 3 is preferably in the range of 10 ⁶ to 10 ⁹ Pa. If the storage elastic modulus of the die bonding film 3 is too low, the self-shape retention performance may be reduced, and chipping of the die bonding film may occur at the time of picking up. If it is too large, the die bonding film 3 is sufficient for the non-adhesive film 4. There is a case where the dicing die bonding tape 1 cannot be manufactured without being in close contact.

(Dicing film)
The dicing film 5 is used for attaching to a dicing ring. The dicing film 5 is used for enhancing the expandability after the dicing is performed, or for enhancing the pickup performance of the semiconductor chip with the die bonding film 3. The dicing film 5 includes a substrate 5a and an adhesive 5b configured by applying an adhesive to one surface of the substrate 5a. Although the dicing die bonding tape 1 includes the dicing film 5, the dicing film 5 may not necessarily be provided.

  The substrate 5a is not particularly limited, but is a polyester film such as a polyethylene terephthalate film, a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polymethylpentene film, a polyolefin film such as a polyvinyl acetate film, or polyvinyl chloride. Examples thereof include a plastic film such as a film or a polyimide film. Especially, since it is excellent in expandability and environmental impact is small, a polyolefin-type film is used suitably.

  Although it does not specifically limit as the upper adhesive 5b, An acrylic adhesive, a special synthetic rubber adhesive, a synthetic resin adhesive, a rubber adhesive, etc. are mentioned. Among these, an acrylic pressure-sensitive adhesive as a pressure-sensitive type is preferable. When an acrylic pressure-sensitive adhesive is used, the adhesion to the non-stick film 4 and the peelability from the dicing ring can be increased, and the cost can be reduced. In addition, it is preferable that the adhesive 5b is comprised so that a dicing ring can be stuck, for example.

  The material constituting the substrate 5a is particularly preferably polyolefin or polyvinyl chloride, and the adhesive 5b is preferably an acrylic adhesive or a rubber adhesive. By using these preferable materials, an appropriate expandability can be obtained when picking up a semiconductor chip.

(Release film)
The release film 2 is used to protect the surface 3a of the die bonding film 3 to which the semiconductor wafer is attached. Although the dicing die bonding tape 1 includes the release film 2, the release film 2 is not necessarily provided.

  The release film 2 is not particularly limited, but is a polyester film such as a polyethylene terephthalate film, a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polymethylpentene film, a polyolefin film such as a polyvinyl acetate film, or polyvinyl chloride. A film or a plastic film such as a polyimide film that has been subjected to mold release treatment with silicon or the like can be used. Especially, since it is excellent in smoothness, thickness accuracy, etc., synthetic resin films, such as a polyethylene terephthalate film, are preferable.

  The said release film may be comprised with the said film of one layer, and the said film may be laminated | stacked and may be comprised with the laminated | multilayer film of two or more layers. When the release film is a laminated film in which a plurality of films are laminated, two or more different types of films may be laminated.

  FIG. 2 is a partially cutaway front sectional view of a dicing die bonding tape according to another embodiment of the present invention.

  In the dicing die bonding tape 11 shown in FIG. 2, the release film 2, the die bonding film 3, and the non-adhesive film 4 described above are laminated in this order. That is, the dicing die bonding tape 11 is configured in the same manner as the dicing die bonding tape 1 except that the dicing film 5 is not separately provided. Thus, the dicing film 5 does not necessarily need to be provided. In the dicing die bonding tape 11, the non-adhesive film 4 may be used as a dicing film.

  FIG. 3 is a partially cutaway front sectional view of a dicing die bonding tape according to another embodiment of the present invention.

  The dicing die bonding tape 15 shown in FIG. 3 is configured in the same manner as the dicing die bonding tape 1 except that the configuration of the non-adhesive film is different. In the dicing die bonding tape 15, the release film 2, the die bonding film 3, the non-adhesive film 16, and the dicing film 5 are laminated in this order.

  The non-adhesive film 16 has non-adhesiveness. That is, the first layer 17 and the second layer 18 are non-adhesive. Moreover, the non-adhesive film 16 contains a (meth) acrylic resin crosslinked body as a main component.

  The surface energy of the surface 16a to which the die bonding film 3 of the non-adhesive film 16 is attached, that is, the surface to which the die bonding film of the first layer 17 is attached is preferably 40 N / m or less. In this case, at the time of pickup, a part of the die bonding film is chipped and the film piece is separated, and the film piece is difficult to adhere to the non-adhesive film 16. Therefore, the die bonding film 3 can be easily peeled from the non-adhesive film 16. Moreover, when the chip | tip of the die bonding film 3 does not arise, die bonding can be performed reliably.

  In the dicing die bonding tape 15, the non-adhesive film 16 has a two-layer structure in which two layers 17 and 18 are laminated. Therefore, the first and second layers 17 and 18 can have different functions. . For example, the first layer 17 can have a function of improving the peelability between the adhesive film 3 and the non-adhesive film 16, and the second layer 18 can have an expanding function. Therefore, since the non-adhesive film 16 has a two-layer structure, it is possible to easily design the optimum physical properties as a dicing die bonding tape.

(Semiconductor chip manufacturing method)
Next, a method for manufacturing a semiconductor chip when the above-described dicing die bonding tape 1 is used will be described with reference to FIGS.

  First, the dicing die bonding tape 1 described above and a semiconductor wafer 21 shown in a plan view in FIG. 4 are prepared.

  The semiconductor wafer 21 has a circular planar shape. On the surface 21a of the semiconductor wafer 21, although not shown, circuits for forming individual semiconductor chips are formed in each region partitioned in a matrix by streets. The back surface 21b of the semiconductor wafer 21 is polished so as to have a predetermined thickness.

  The thickness of the semiconductor wafer 21 is preferably 30 μm or more. If the thickness of the semiconductor wafer 21 is less than 30 μm, cracks or the like may occur during grinding or handling, resulting in damage.

  In addition, the semiconductor wafer 21 is divided | segmented for every area | region divided into matrix form at the time of the dicing mentioned later.

  As shown in FIG. 5, the prepared semiconductor wafer 21 is placed on the stage 22 in an inverted state. That is, the semiconductor wafer 21 is placed on the stage 22 so that the surface 21 a of the semiconductor wafer 21 is in contact with the stage 22. An annular dicing ring 23 is provided on the stage 22 so as to be spaced apart from the outer peripheral side surface 21 c of the semiconductor wafer 21. The height of the dicing ring 23 is equal to or slightly lower than the total thickness of the semiconductor wafer 21, the die bonding film 3, and the non-adhesive film 4.

  Next, as shown in FIG. 6, the semiconductor wafer 21 is bonded to the surface 3 a of the die bonding film 3 of the dicing die bonding tape 1. The dicing film 5 has an extension portion 5 c that extends so as to reach the outside of the outer peripheral edges of the die bonding film 3 and the non-adhesive film 4. As shown in FIG. 6, the adhesive 5 b of the extension portion 5 c of the exposed dicing film 5 is stuck on the dicing ring 23 while peeling the release film 2 of the dicing die bonding tape 1. Further, the exposed die bonding film 3 is bonded to the back surface 21 b of the semiconductor wafer 21.

  In FIG. 7, the state which joined the semiconductor wafer 21 to the die-bonding film 3 is shown with front sectional drawing. The die bonding film 3 is bonded to the entire back surface 21 b of the semiconductor wafer 21. The extension portion 5 c of the dicing film 5 is supported by the dicing ring 23 so that an extra force is not applied to the semiconductor wafer 21.

  Next, as shown in a front sectional view in FIG. 8, the semiconductor wafer 21 to which the die bonding film 3 is bonded is taken out from the stage 22 and turned upside down. At this time, the dicing ring 23 is taken out while being attached to the dicing film 5. The taken-out semiconductor wafer 21 is placed on another stage 24 so that the surface 21a faces upward.

  Next, the semiconductor wafer 21 to which the die bonding film 3 is bonded is diced and divided into individual semiconductor chips. As shown by the arrow X in FIG. 8, dicing is performed from the semiconductor wafer 21 side.

  As shown in FIG. 9, after dicing, the semiconductor wafer 21 and the die bonding film 3 are completely cut. The dicing is not particularly limited as long as the dicing is performed so as to penetrate the die bonding film 3. For example, a cutting blade may be inserted to a position equal to or less than half the thickness of the non-adhesive film 4. In FIG. 9, the cutting blade is inserted deeper than the interface between the die bonding film 3 and the non-adhesive film 4 to form a cut portion 41.

  In FIG. 9, dicing is performed by a two-step (step cut) method. If the damage of the semiconductor wafer 21 can be prevented at the time of dicing, the dicing may be performed by a single cutting process.

  The dicing method of the semiconductor wafer 21 is not particularly limited. For example, a single-cut method in which cutting is performed with one blade, a step-cut method in which cutting is performed using two blades sequentially, and a semiconductor that is further cut with two blades. Examples of the wafer surface include a bevel cutting method using a V-shaped blade. Among these, the step cut method is suitably performed because the semiconductor wafer is unlikely to be damaged during cutting.

  The dicing may be performed using a laser beam instead of a cutting blade. That is, the semiconductor wafer may be diced by laser light irradiation. In this case, dicing is performed so as to penetrate not only the semiconductor wafer 21 but also the die bonding film 3. Therefore, the laser light penetrates the die bonding film 3 and reaches the middle of the non-adhesive film 4. Even if such dicing by laser light irradiation is performed, welding of the non-adhesive film 4 to the die bonding film 3 hardly occurs.

  In a conventional dicing die bonding tape in which a radiation curable dicing film is attached to a die bonding film, the dicing film may melt and adhere to the die bonding film when dicing is performed with laser light. For this reason, the semiconductor chip may not be taken out. On the other hand, in the dicing die bonding tape 1, the non-adhesive film 4 is not reduced in adhesive strength by light irradiation and contains a (meth) acrylic resin crosslinked body as a main component. Even if it is irradiated, welding hardly occurs.

  After the semiconductor wafer 21 is diced and divided into individual semiconductor chips, the non-adhesive film 4 and the dicing film 5 are stretched to extend the interval between the divided individual semiconductor chips. Since the dicing die-bonding tape 1 has the dicing film 5, it has excellent expandability and can easily stretch the non-adhesive film 4 and the dicing film 5.

  After the non-adhesive film 4 and the dicing film 5 are stretched, the die bonding film 3 is peeled from the non-adhesive film 4 in a state where the semiconductor chips are bonded, and the semiconductor chip 31 shown in FIG. 10 is taken out.

  As a method of peeling the die bonding film 3 to which the semiconductor chip is bonded from the non-adhesive film 4, from the back surface 21b side of the semiconductor wafer 21, a method of pushing up using a large number of pins or a method of pushing up using a multistage pin, Examples include a method of vacuum peeling from the surface 21a side of the semiconductor wafer 21 or a method of utilizing ultrasonic vibration.

  Since breakage of the semiconductor chip 31 can be further prevented, the die bonding film 3 is bonded by applying a force acting in a direction substantially orthogonal to the bonding surface between the semiconductor wafer 21 and the die bonding film 3. It is preferable that the semiconductor chip 31 is peeled off from the non-adhesive film 4 in the state where it is formed.

  In the dicing die bonding tape 1, the peelability between the die bonding film 3 and the non-adhesive film 4 is enhanced. Accordingly, the semiconductor chip can be easily taken out together with the die bonding film without performing an operation of reducing the peeling force by light irradiation or the like. That is, in the dicing die bonding tape 1, it is not necessary to configure the non-adhesive film so that the peeling force is reduced by, for example, light irradiation. It is preferable that the non-adhesive film does not have a peeling force that is reduced by light irradiation or the like. When the non-adhesive film is not a film whose peeling force is reduced by light irradiation or the like, it is not necessary to perform an operation for reducing the peeling force by light irradiation or the like, and the semiconductor chip manufacturing efficiency is improved. Note that light irradiation does not include exposure to natural light, but means intentional irradiation with ultraviolet rays or the like.

  Hereinafter, the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.

In producing the dicing die bonding tapes of Examples 1 to 10 and Comparative Examples 1 to 5 , the following die bonding films A to D, non-adhesive films L1 to L10, and dicing films DC1 to DC4 were prepared.

(1) Die bonding film formation (Die bonding film A)
15 parts by weight of G-2050M (manufactured by NOF Corporation, epoxy group-containing acrylic polymer, weight average molecular weight Mw 200,000), 80 parts by weight of EXA-7200HH (manufactured by Dainippon Ink, Inc., dicyclopentadiene type epoxy resin) , HP-4032D (manufactured by Dainippon Ink Co., Ltd., naphthalene type epoxy resin), 5 parts by weight YH-309 (manufactured by Japan Epoxy Resin Co., Ltd., acid anhydride curing agent), 2MAOK-PW (Shikoku Kasei Co., Ltd.) Manufactured, imidazole) and 2 parts by weight of S320 (manufactured by Chisso Corporation, aminosilane) were blended to obtain a blend. This blend was added to methyl ethyl ketone (MEK) as a solvent so as to have a solid content of 60% and stirred to obtain a coating solution. This was applied to a release film and dried in an oven at 110 ° C. for 3 minutes to form a die bonding film A having a thickness of 40 μm on the release film.

(Die bonding film B)
100 parts by weight of G-2050M (manufactured by NOF Corporation, epoxy group-containing acrylic polymer, weight average molecular weight Mw 200,000) and 80 parts by weight of EXA-7200HH (manufactured by Dainippon Ink, Inc., dicyclopentadiene type epoxy resin) , HP-4032D (manufactured by Dainippon Ink Co., Ltd., naphthalene type epoxy resin), 5 parts by weight YH-309 (manufactured by Japan Epoxy Resin Co., Ltd., acid anhydride curing agent), 2MAOK-PW (Shikoku Kasei Co., Ltd.) Manufactured, imidazole) and 2 parts by weight of S320 (manufactured by Chisso Corporation, aminosilane) were blended to obtain a blend. Thereafter, a die bonding film B was formed in the same manner as the die bonding film A.

(Die bonding film C)
7 parts by weight of G-2050M (manufactured by NOF Corporation, epoxy group-containing acrylic polymer, weight average molecular weight Mw 200,000), 88 parts by weight of EXA-7200HH (manufactured by Dainippon Ink, Inc., dicyclopentadiene type epoxy resin) , HP-4032D (manufactured by Dainippon Ink, Naphthalene type epoxy resin), 5 parts by weight, YH-309 (manufactured by Japan Epoxy Resin, acid anhydride curing agent), 2 MAOK-PW (Shikoku Chemicals) Manufactured by imidazole) and 2 parts by weight of S320 (manufactured by Chisso Corporation, aminosilane) were blended to obtain a blend. Thereafter, a die bonding film C was formed in the same manner as the die bonding film A.

(Die bonding film D)
DF402 manufactured by Hitachi Chemical Co., Ltd.

(2) Formation of non-adhesive film First, the following acrylic polymers were synthesized.

(Polymer 1)
95 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of 2-hydroxyethyl acrylate, 0.2 parts by weight of Irgacure 651 (manufactured by Ciba Geigy Co., Ltd., 50% ethyl acetate solution) as a photo radical generator, and 0.01 parts by weight of lauryl mercaptan Was dissolved in ethyl acetate to obtain a solution. Polymerization was performed by irradiating this solution with ultraviolet rays to obtain an ethyl acetate solution of the polymer. Further, 3.5 parts by weight of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko KK, Karenz MOI) is reacted with 100 parts by weight of the solid content of this solution to obtain an acrylic copolymer which is a crosslinked (meth) acrylic resin. A polymer (Polymer 1) was obtained. The polymer 1 had a weight average molecular weight of 700,000 and an acid value of 0.86 (mgKOH / g).

(Polymer 2)
94 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of 2-hydroxyethyl acrylate, 1 part by weight of acrylic acid, 0.2 part by weight of Irgacure 651 (manufactured by Ciba Geigy Co., Ltd., 50% ethyl acetate solution), and lauryl 0.01 parts by weight of mercaptan was dissolved in ethyl acetate to obtain a solution. Polymerization was performed by irradiating this solution with ultraviolet rays to obtain an ethyl acetate solution of the polymer. Further, 3.5 parts by weight of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko KK, Karenz MOI) is reacted with 100 parts by weight of the solid content of this solution to obtain an acrylic copolymer which is a crosslinked (meth) acrylic resin. A polymer (polymer 2) was obtained. The polymer 2 had a weight average molecular weight of 760,000 and an acid value of 6.73 (mgKOH / g).

(Polymer 3)
97 parts by weight of 2-ethylhexyl acrylate, 3 parts by weight of 2-hydroxyethyl acrylate, 0.2 parts by weight of Irgacure 651 (manufactured by Ciba Geigy Co., Ltd., 50% ethyl acetate solution) as a photo radical generator, and 0.01 parts by weight of lauryl mercaptan Was dissolved in ethyl acetate to obtain a solution. Polymerization was performed by irradiating this solution with ultraviolet rays to obtain an ethyl acetate solution of the polymer. Furthermore, 1.8 parts by weight of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko KK, Karenz MOI) is reacted with 100 parts by weight of the solid content of this solution to obtain an acrylic copolymer which is a crosslinked (meth) acrylic resin. A polymer (polymer 3) was obtained. The polymer 3 had a weight average molecular weight of 890,000 and an acid value of 0.58 (mgKOH / g).

(Polymer 4)
99 parts by weight of 2-ethylhexyl acrylate, 1 part by weight of 2-hydroxyethyl acrylate, 0.2 part by weight of Irgacure 651 (manufactured by Ciba Geigy Co., Ltd., 50% ethyl acetate solution) as a photo radical generator, and 0.01 part by weight of lauryl mercaptan Was dissolved in ethyl acetate to obtain a solution. Polymerization was performed by irradiating this solution with ultraviolet rays to obtain an ethyl acetate solution of the polymer. Furthermore, 0.9 parts by weight of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko KK, Karenz MOI) is reacted with 100 parts by weight of the solid content of this solution to obtain an acrylic copolymer which is a crosslinked (meth) acrylic resin. A polymer (polymer 4) was obtained. The polymer 4 had a weight average molecular weight of 730,000 and an acid value of 0.34 (mgKOH / g).

(Polymer 5)
95 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of 2-hydroxyethyl acrylate, 0.2 parts by weight of Irgacure 651 (manufactured by Ciba Geigy Co., Ltd., 50% ethyl acetate solution) as a photo radical generator, and 0.01 parts by weight of lauryl mercaptan Was dissolved in ethyl acetate to obtain a solution. Polymerization was performed by irradiating this solution with ultraviolet rays to obtain an ethyl acetate solution of the polymer. Further, 7 parts by weight of 2-methacryloyloxyethyl isocyanate (produced by Showa Denko Co., Ltd., Karenz MOI) is reacted with 100 parts by weight of the solid content of this solution to obtain an acrylic copolymer which is a crosslinked (meth) acrylic resin. (Polymer 5) was obtained. The polymer 5 had a weight average molecular weight of 920,000 and an acid value of 1.00 (mgKOH / g).

(Non-adhesive films L1-L7)
Any one of the obtained polymers 1 to 5, U-324A (manufactured by Shin-Nakamura Chemical Co., Ltd., urethane acrylic oligomer), Irgacure 651 (manufactured by Ciba-Gaigi) as a photo radical generator, and SE4050 (manufactured by Admatechs, silica filler) was blended in the proportions shown in Table 1 below, and dissolved in ethyl acetate to obtain a solution. This solution was coated on a release PET (polyethylene terephthalate) film using an applicator. Furthermore, it was heat-dried in an oven at 110 ° C. for 3 minutes to form a film having a thickness of 50 μm. This film was irradiated with ultraviolet rays of 365 nm at 1000 mJ under a high pressure mercury lamp. Non-adhesive films L1 to L7 crosslinked in this way were obtained.

(Non-adhesive film L9)
Tamapoly polyolefin film GF-8

(Non-adhesive film L10)
Silicone release treatment polyethylene terephthalate film PET5011 manufactured by Lintec Corporation

(3) Dicing film (Dicing film DC1)
PE tape # 6318-B: manufactured by Sekisui Chemical Co., Ltd., PE tape in which a pressure-sensitive adhesive layer made of a rubber-based pressure-sensitive adhesive is formed on one side of a polyethylene base material, the thickness of the base material 60 μm, the thickness of the pressure-sensitive adhesive layer 10 μm

(Dicing film DC2)
Adwill D650: manufactured by Lintec Co., Ltd., a UV curable dicing tape in which an adhesive layer made of acrylic resin paste is formed on one side of an olefin substrate

(Dicing film DC3)
ELEGrip UHP-0805MC: manufactured by Denki Kagaku Kogyo Co., Ltd., UV curable dicing tape in which an adhesive layer made of acrylic resin paste is formed on one side of an olefin substrate, the thickness of the substrate layer is 80 μm, and the thickness of the adhesive layer is 5 μm

(Dicing film DC4)
The above-mentioned dicing film DC2 (Adwill D650) is photocured and made into a non-adhesive state.

Example 1
The non-adhesive film L1 was laminated at 60 ° C. on the surface of the die bonding film A on the release film. Next, the dicing film DC1 was affixed from the adhesive side to the surface opposite to the surface affixed to the die bonding film A of the non-adhesive film L1. In this manner, a dicing die bonding tape in which a release film / die bonding film / non-adhesive film / dicing film was laminated in this order was produced.

(Examples 2 to 10 and Comparative Examples 4 and 5 )
A dicing die bonding tape was produced in the same manner as in Example 1 except that the die bonding film, the non-adhesive film and / or the dicing film were replaced with the films shown in Table 1 below. In addition, at the time of affixing, when the dicing film had an adhesive layer, the dicing film was affixed on the non-adhesive film from the adhesive side.

(Comparative Example 1)
On the surface of the die bonding film A on the release film, the dicing film DC4 (Adwill D650) that was photocured and made non-adhesive was attached from the adhesive side. A single-layer dicing film DC4 was used as the non-adhesive film and the dicing film. A dicing die bonding tape in which a release film / die bonding film / dicing film (also corresponding to a non-adhesive film) was laminated in this order was produced.

(Comparative Examples 2-3)
A dicing die bonding tape was prepared in the same manner as in Example 1 except that the non-adhesive film was replaced with the non-adhesive film shown in Table 1 below.

(Evaluation of dicing die bonding tape)
(1) Storage elastic modulus at 25 ° C. before curing of die bonding film A die bonding film before being cured by heating is cut into a size of 0.5 mm in thickness, 5 mm in width and 3 cm in length to obtain an evaluation sample. It was. About the obtained evaluation sample, the storage elastic modulus in 25 degreeC was measured on condition of 10 Hz and distortion 0.1% using DVA-200 by IT measurement company.

(2) Peel strength between die bonding film and non-adhesive film A non-adhesive film was laminated at 60 ° C. on one surface of the die bonding film. Next, a stainless steel plate was affixed to the surface of the die bonding film opposite to the surface to which the non-adhesive film was affixed, and the die bonding film and the stainless steel plate were adhered to obtain an evaluation sample. Then, with the evaluation sample fixed so that peeling occurs at the interface between the non-adhesive film and the die bonding film, at a peeling rate of 300 mm / min, the direction of 180 degrees with respect to the interface between the die bonding film and the non-adhesive film In addition, the non-adhesive film was peeled off from the die bonding film. At this time, the force required for peeling was measured with a measurement width of 25 mm using AGS-100D manufactured by Shimadzu Corporation, and the average value of the obtained values was defined as peeling strength.

(3) Breaking elongation of non-adhesive film A non-adhesive film (thickness 0.5 mm x width 5 mm x length 7 cm) using a tensile tester AG-IS (manufactured by Shimazu Seisakusho) at 300 mm / min. The elongation at the time of pulling and breaking was taken as the breaking elongation.

(4) Surface energy of non-adhesive film Using a wettability reagent (manufactured by Nacalai Tesque), the surface energy of the surface of the non-adhesive film attached to the die bonding film was measured according to JIS K6798.

(5) Evaluation at the time of manufacturing a semiconductor chip The release film of the dicing die bonding tape is peeled off, and the exposed die bonding film is laminated on one surface of a silicon wafer having a diameter of 8 inches and a thickness of 80 μm at a temperature of 60 ° C. An evaluation sample was prepared.

  The evaluation sample was diced into a chip size of 10 mm × 10 mm at a feed rate of 50 mm / sec using a dicing apparatus DFD651 (manufactured by Disco).

  After dicing, using a die bonder best D-02 (manufactured by Canon Machinery Co., Ltd.), the divided semiconductor chips were continuously picked up under the conditions of a collet size of 8 mm square, a push-up speed of 5 mm / sec, and an expand of 4 mm. As described above, the machinability during dicing and the possibility of pickup were evaluated. Furthermore, after picking up, it was observed whether or not a part of the die bonding film was missing on a total of 20 sides of 4 picked up 5 semiconductor chips. The number of sides where there was no chip with a length along the side larger than 50 μm was counted.

  The machinability was evaluated according to the following evaluation criteria.

[Evaluation criteria for generation of whisker-like cutting waste during cutting]
A: Almost no whisker-like cutting waste was observed during dicing. Or even if beard-like cutting waste existed, there was no problem with the pickup.
(Triangle | delta): The whisker-like cutting waste might arise.
X: Whisker-like cutting waste was seen in many chips.

The results are shown in Table 1 below.

[Evaluation criteria for chip skipping during cutting]
○: No chip jump occurred.
Δ: Chip skipping occurred at one part of the chip.
X: Chip skipping was remarkable (many chips skipped during dicing).

1A and 1B are a partially cutaway front sectional view and a partially cutaway plan view showing a dicing die bonding tape according to an embodiment of the present invention. FIG. 2 is a partially cutaway front sectional view showing a dicing die bonding tape according to another embodiment of the present invention. FIG. 3 is a partially cutaway front sectional view showing a dicing die bonding tape according to another embodiment of the present invention. FIG. 4 is a plan view showing a semiconductor wafer used for manufacturing semiconductor chips. FIG. 5 is a view for explaining a method of manufacturing a semiconductor chip using a dicing die bonding tape according to an embodiment of the present invention, and is a front sectional view showing a state in which a semiconductor wafer is placed on a stage. FIG. FIG. 6 is a view for explaining a method of manufacturing a semiconductor chip using a dicing die bonding tape according to an embodiment of the present invention, and shows a state when a semiconductor wafer is bonded to an adhesive layer. It is front sectional drawing. FIG. 7 is a view for explaining a method of manufacturing a semiconductor chip using a dicing die bonding tape according to an embodiment of the present invention, and is a front cross-sectional view showing a state in which a semiconductor wafer is bonded to an adhesive layer FIG. FIG. 8 is a view for explaining a method of manufacturing a semiconductor chip using a dicing die bonding tape according to an embodiment of the present invention, where the adhesive layer with a semiconductor wafer is turned over and another stage is mounted. It is front sectional drawing which shows the state mounted in. FIG. 9 is a diagram for explaining a method of manufacturing a semiconductor device using a dicing die bonding tape according to an embodiment of the present invention, in which a semiconductor wafer to which an adhesive layer is bonded is diced and individually It is a partial notch front sectional drawing which shows the state divided | segmented into the semiconductor chip. FIG. 10 is a front sectional view showing a semiconductor chip manufactured using a dicing die bonding tape according to an embodiment of the present invention.

DESCRIPTION OF SYMBOLS 1 ... Dicing die-bonding tape 2 ... Release film 2a ... Upper surface 3 ... Die bonding film 3a ... Surface 4 ... Non-adhesive film 4a, 4b ... Surface 5 ... Dicing film 5a ... Base material 5b ... Adhesive 5c ... Extension part 6 7, protective sheet 11 ... dicing die bonding tape 15 ... dicing die bonding tape 16 ... non-adhesive films 16a, 16b ... surface 17 ... first layer 18 ... second layer 21 ... semiconductor wafer 21a ... surface 21b ... Back surface 21c ... outer peripheral side surface 22 ... stage 23 ... dicing ring 24 ... stage 31 ... semiconductor chip 41 ... notched portion

Claims (11)

Irradiating or heating the entire composition for a non-adhesive film containing a (meth) acrylic acid resin crosslinked body as a main component to form a non-adhesive film;
Bonding a dicing film to one surface of the non-adhesive film;
A method of manufacturing a dicing die bonding tape, comprising: bonding a die bonding film to the other surface of the non-adhesive film so that a peeling force of the die bonding film from the non-adhesive film is in a range of 1 N to 15 N / m. . The manufacturing method of the dicing die-bonding tape according to claim 1, wherein the elongation at the breaking point of the non-adhesive film is in the range of 5 to 100%. The manufacturing method of the dicing die-bonding tape of Claim 1 or 2 whose surface energy of the surface where the said die-bonding film of the said non-adhesion film was affixed is 40 N / m or less. The method for producing a dicing die bonding tape according to any one of claims 1 to 3, wherein a surface of the non-adhesive film to which the die bonding film is attached is not subjected to release treatment. The said (meth) acrylic resin crosslinked body contains the (meth) acrylic acid ester polymer which has a C1-C18 alkyl group , Manufacture of the dicing die-bonding tape of any one of Claims 1-4 Way . 6. The method of manufacturing a dicing die bonding tape according to claim 5, wherein the acid value of the (meth) acrylic acid ester polymer is 2 or less. 7. The dicing product according to claim 5, wherein the (meth) acrylic acid ester polymer is a (meth) acrylic acid ester polymer obtained by polymerizing at least one of butyl acrylate and ethyl acrylate. Die bonding tape manufacturing method . The said die-bonding film is a manufacturing method of the dicing die-bonding tape of any one of Claims 1-7 consisting of a thermosetting resin composition. The manufacturing method of the dicing die-bonding tape of Claim 8 which has the storage elastic modulus in 23 degreeC before thermosetting of the said die-bonding film exists in the range of 10 < ⁶ > -10 < ⁹ > Pa. The manufacturing method of the dicing die bonding tape of Claim 8 or 9 with which the said die bonding film contains the high molecular polymer which has an epoxy resin, the functional group which reacts with an epoxy group, and a thermosetting agent. The dicing die bonding according to claim 10, wherein the die bonding film includes a polymer having a functional group that reacts with the epoxy group in a ratio of 10 to 100 parts by weight with respect to 100 parts by weight of the epoxy resin. Tape manufacturing method .