JP2013065625A - Dicing-die bonding tape, manufacturing kit of semiconductor chip with adhesive layer and manufacturing method of semiconductor chip with adhesive layer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dicing-die bonding tape capable of dicing an adhesive layer precisely, and enhancing the pickup performance of a semiconductor chip with an adhesive layer.SOLUTION: A dicing-die bonding tape 1 includes an adhesive layer 3, a base material layer 4 and a dicing layer 5. At the time of dicing, an annular dicing ring 26 is stuck to the outer periphery of the dicing layer 5. The dicing layer 5 has a diameter larger than that of the base material layer 4. When the inside diameter of the dicing ring is X, the diameter of the dicing layer 5 exceeds 1X, and the diameter of the base material layer 4 is 0.91X or larger. The manufacturing kit of a semiconductor chip with an adhesive layer has the dicing-die bonding tape 1 and the dicing ring 26.

Description

  The present invention is used to obtain a semiconductor chip with an adhesive layer, and a dicing die bonding tape used for die bonding the semiconductor chip with an adhesive layer, and the dicing die bonding tape. The present invention relates to a manufacturing kit for a semiconductor chip with an adhesive layer and a method for manufacturing the semiconductor chip with an adhesive layer.

  When a semiconductor chip is cut out from a semiconductor wafer, a dicing method called a pre-dicing method is used. An example of the prior dicing method is disclosed in Patent Document 1 below, for example.

  In the tip dicing method, first, a cut is formed on the surface of a semiconductor wafer. Next, a protective sheet is affixed on the surface of the semiconductor wafer on which the cuts are formed. Thereafter, the back surface of the semiconductor wafer is ground to the notched portion to reduce the thickness of the semiconductor wafer and divide it into individual semiconductor chips. A protective sheet is attached to the surface of the divided semiconductor wafer divided into individual semiconductor chips.

  Further, in order to easily mount individual semiconductor chips obtained by the above-described dicing method on a substrate, a die bonding layer is often attached to the back surface of the semiconductor chip. In order to obtain this semiconductor chip with a die bonding layer, a dicing die bonding tape including a die bonding layer and a dicing layer is used.

  As an example of the dicing die bonding tape, the following Patent Documents 2 and 3 disclose a dicing die bonding tape in which an adhesive sheet and a base material (dicing tape) are laminated. The adhesive sheet in this dicing-die bonding tape is a die bonding layer, and is a sheet for laminating an adhesive layer on a semiconductor chip to obtain a semiconductor chip with an adhesive layer.

JP 2006-245467 A JP 2005-260204 A JP 2006-080142 A

  When a semiconductor chip with an adhesive layer is obtained using the dicing die bonding tape described in Patent Documents 2 and 3, the dicing die bonding tape is attached to the semiconductor wafer after division from the adhesive sheet side. Next, the adhesive sheet is modified by irradiation with laser light, heating or cooling. Next, the modified adhesive sheet and the base material are stretched, and the adhesive sheet is divided and cut along the cut portion of the semiconductor wafer, and the individual semiconductor chips are separated and cut into the lower surface of the semiconductor chip. Forming an adhesive layer. Thereafter, the semiconductor chip with an adhesive layer is peeled off from the substrate and taken out. The taken-out semiconductor chip with the adhesive layer is mounted on the substrate from the adhesive layer side.

  In the dicing die bonding tape described in Patent Documents 2 and 3, when the base material and the adhesive sheet are stretched, the adhesive sheet may not be appropriately cut at a desired position. For example, the adhesive layer may not be reliably disposed below the semiconductor chip. For this reason, when a semiconductor chip with an adhesive layer is laminated and bonded to a member to be bonded, the semiconductor chip is inclined or the semiconductor chip is not sufficiently bonded.

  Further, in Patent Documents 2 and 3, the dicing-die bonding tape is applied from the adhesive sheet side to the semiconductor wafer after division, and then the adhesive sheet is modified by irradiating laser light, heating or cooling. Quality. In Patent Documents 2 and 3, it is necessary to carry out such an extra step of reforming, which takes extra time. Furthermore, equipment for performing such reforming must be prepared.

  An object of the present invention is to provide a dicing die bonding tape capable of accurately cutting an adhesive layer and improving the pick-up property of a semiconductor chip with an adhesive layer, and an adhesive using the dicing die bonding tape. An object of the present invention is to provide a kit for producing a semiconductor chip with an adhesive layer and a method for producing a semiconductor chip with an adhesive layer.

  According to a wide aspect of the present invention, the adhesive layer, the base material layer laminated on one surface of the adhesive layer, and the pressure-sensitive adhesive layer side of the base material layer are opposite to each other. A dicing layer laminated on the surface, and at the time of dicing, an annular dicing ring is attached to the outer peripheral portion of the dicing layer, and the dicing layer has a diameter larger than that of the base material layer. A dicing-die bonding tape is provided in which the diameter of the dicing layer exceeds 1X and the diameter of the base material layer is 0.91X or more when the inner diameter of the substrate is X.

  According to a wide aspect of the present invention, there is provided a kit for manufacturing a semiconductor chip with an adhesive layer having a dicing die bonding tape and an annular dicing ring, wherein the dicing die bonding tape is an adhesive layer. And a base material layer laminated on one surface of the adhesive layer, and a dicing layer laminated on the surface of the base material layer opposite to the pressure-sensitive adhesive layer side, at the time of dicing The annular dicing ring is attached to the outer peripheral portion of the dicing layer, the diameter of the dicing layer is larger than the diameter of the base material layer, and the inner diameter of the dicing ring is X. A kit for producing a semiconductor chip with an adhesive layer, wherein the diameter exceeds 1X and the diameter of the base material layer is 0.91X or more is provided.

  In a specific aspect of the dicing-die bonding tape according to the present invention and the kit for producing a semiconductor chip with an adhesive layer according to the present invention, the base material layer is a non-adhesive layer having non-adhesiveness.

  In another specific aspect of the manufacturing kit of the dicing die bonding tape according to the present invention and the semiconductor chip with an adhesive layer according to the present invention, the base material layer is obtained by crosslinking a composition containing an acrylic polymer. It is formed by a crosslinked body.

  The method for producing a semiconductor chip with an adhesive layer according to the present invention uses the above-described dicing die bonding tape or the above-described kit for producing a semiconductor chip with an adhesive layer, and a protective sheet and the protective sheet. The adhesive layer of the dicing die bonding tape is bonded to the laminated body using a laminated body having a divided semiconductor wafer that is laminated on one surface and divided into individual semiconductor chips. The step of attaching to the semiconductor wafer after division, the step of attaching the dicing layer to the annular dicing ring, the step of peeling the protective sheet from the semiconductor wafer after division, the adhesive layer and the base The adhesive layer is cut along the cut portion of the semiconductor wafer after the division by stretching the material layer, and the division is performed. After the step of separating the individual semiconductor chips in the semiconductor wafer and dicing, the adhesive layer to which the semiconductor chip is attached is peeled from the base material layer, and the semiconductor chip is removed from the adhesive layer. And a step of taking out each.

  In a specific aspect of the method for manufacturing a semiconductor chip with an adhesive layer according to the present invention, a step of forming a cut for dividing the semiconductor wafer into individual semiconductor chips on the surface of the semiconductor wafer, and the cut are formed. A step of attaching a protective sheet to the surface of the semiconductor wafer, a step of grinding the back surface of the semiconductor wafer to which the protective sheet is attached, dividing the semiconductor wafer into individual semiconductor chips, and obtaining the laminate. Are further provided.

  In the dicing die bonding tape according to the present invention, an annular dicing ring is attached to the outer peripheral portion of the dicing layer at the time of dicing, and the diameter of the dicing layer is larger than the diameter of the base material layer. When the inner diameter is X, the diameter of the dicing layer exceeds 1X, and the diameter of the base material layer is 0.91X or more, so by stretching the adhesive layer and the base material layer, The adhesive layer can be accurately cut along the cut portion of the divided semiconductor wafer. As a result, the pick-up property of the semiconductor chip with an adhesive layer can be enhanced.

  In the kit for producing a semiconductor chip with an adhesive layer according to the present invention, an annular dicing ring is attached to the outer peripheral portion of the dicing layer during dicing, and the diameter of the dicing layer is larger than the diameter of the base material layer. Since the diameter of the dicing layer exceeds 1X and the diameter of the base material layer is 0.91X or more when the inner diameter of the dicing ring is X, the adhesive layer and the base material layer , The adhesive layer can be accurately cut along the cut portion of the divided semiconductor wafer. As a result, the pick-up property of the semiconductor chip with an adhesive layer can be enhanced.

1A and 1B are a partially cutaway plan view and a partially cutaway front sectional view schematically showing a dicing die bonding tape according to an embodiment of the present invention. FIGS. 2A and 2B are a partially cutaway plan view and a partially cutaway front sectional view schematically showing a modification of the dicing die bonding tape shown in FIG. 3A and 3B are a partially cutaway plan view and a partially cutaway front sectional view schematically showing another modification of the dicing-die bonding tape shown in FIG. FIGS. 4A to 4D are partial cutaway front sectional views for explaining an example of each process for obtaining a laminated body used when manufacturing a semiconductor chip with an adhesive layer. 5 (a) and 5 (b) are partially cutaway front views for explaining an example of a method for manufacturing a semiconductor chip with an adhesive layer using a dicing die bonding tape according to an embodiment of the present invention. It is sectional drawing. 6A and 6B are partially cutaway front views for explaining an example of a method for manufacturing a semiconductor chip with an adhesive layer using a dicing die bonding tape according to an embodiment of the present invention. It is sectional drawing. FIG. 7A is a front sectional view showing a state when the dicing die bonding tape is attached to the dicing ring, and FIG. 7B is a view after the dicing die bonding tape is attached to the dicing ring. It is a top view which shows a state.

  Details of the present invention will be described below.

  The dicing die-bonding tape according to the present invention includes an adhesive layer, a base material layer laminated on one surface of the adhesive layer, and the adhesive layer side of the base material layer. And a dicing layer laminated on the opposite surface. In the dicing die bonding tape according to the present invention, an annular dicing ring is attached to the outer peripheral portion of the dicing layer during dicing. The diameter of the dicing layer is larger than the diameter of the base material layer. When the inner diameter of the dicing ring is X, the diameter of the dicing layer exceeds 1X, and the diameter of the base material layer is 0.91X or more.

  The kit for producing a semiconductor chip with an adhesive layer according to the present invention has a dicing die bonding tape and an annular dicing ring. The dicing die bonding tape used in the kit for producing a semiconductor chip with an adhesive layer according to the present invention is the dicing die bonding tape according to the present invention.

  Since the diameter of the dicing layer is larger than the diameter of the base material layer, and the diameter of the dicing layer exceeds 1X, it is possible to attach a dicing ring to the dicing layer. That is, the diameter of the dicing layer exceeds 1X so that a dicing ring can be attached to the dicing layer.

  In the present invention, when dicing, an annular dicing ring is attached to the outer peripheral portion of the dicing layer, the diameter of the dicing layer is larger than the diameter of the base material layer, and the inner diameter of the dicing ring is X Since the diameter of the dicing layer exceeds 1X and the diameter of the base material layer is 0.91X or more, the adhesive layer is stretched by stretching the adhesive layer and the base material layer. The semiconductor wafer can be accurately cut along the cut portion of the semiconductor wafer after the division. As a result, the pick-up property of the semiconductor chip with an adhesive layer can be enhanced.

  Specifically, after the adhesive layer and the base material layer are laminated on one side of the divided semiconductor wafer, the base material layer is stretched when the adhesive layer and the base material layer are stretched. Without cutting or breaking, it becomes possible to accurately cut only the adhesive layer along the cut portion of the divided semiconductor wafer. In addition, when the adhesive layer and base material layer which were laminated | stacked on the single side | surface of the said semiconductor wafer after the said division | segmentation are extended, the property that only this adhesive layer is cut | disconnected may be called splitting property.

  In the present invention, the pressure-sensitive adhesive layer may be modified by heating or cooling the adhesive layer or irradiating a laser beam. Can be cut accurately at room temperature. When the adhesive layer is not modified, the manufacturing efficiency of the semiconductor chip with the adhesive layer can be significantly increased. Furthermore, it is not necessary to prepare equipment for modifying the adhesive layer.

  In particular, the inventors have found that the larger the diameter of the base material layer, the more accurately the adhesive layer can be cut and the pickup property of the semiconductor chip with the adhesive layer can be further enhanced. I found it. From the viewpoint of dicing the adhesive layer with higher accuracy and further improving the pickup property of the semiconductor chip with the adhesive layer, the larger the diameter of the base material layer is, the better. Therefore, from the viewpoint of dicing the adhesive layer with higher accuracy and further improving the pick-up property of the semiconductor chip with the adhesive layer, the diameter of the base material layer is preferably 0.92X or more, more preferably Is 0.93X or more, more preferably 0.95X or more, and most preferably 0.97X or more.

  The base material layer may have the same diameter as the inner diameter of the dicing ring or larger than the inner diameter of the dicing ring. The diameter of the base material layer may be 1X or more, may exceed 1X, may be 1.001X or more, may be 1.01X or more, and may be 1.02X or more. It may be 1.03X or more.

  From the viewpoint of facilitating the work of attaching an annular dicing ring to the outer peripheral portion of the dicing layer and suppressing the peeling of the dicing layer attached to the dicing ring, the diameter of the base material layer is preferably 1. 03X or less, more preferably 1.02X or less, even more preferably 1.01X or less, still more preferably 1.001X or less, particularly preferably 1X or less, and most preferably less than 1X.

  On the other hand, from the viewpoint of facilitating the work of attaching an annular dicing ring to the outer peripheral portion of the dicing layer and suppressing the peeling of the dicing layer attached to the dicing ring, the smaller the diameter of the base material layer is, Good. Therefore, from the viewpoint of facilitating the work of attaching an annular dicing ring to the outer peripheral portion of the dicing layer and suppressing the peeling of the dicing layer attached to the dicing ring, the diameter of the base material layer is preferably It is 0.99X or less, More preferably, it is 0.97X or less.

  The larger the diameter of the dicing layer, the easier the operation of attaching an annular dicing ring to the outer peripheral portion of the dicing layer, and the peeling of the dicing layer attached to the dicing ring can be suppressed. For this reason, the diameter of the dicing layer is preferably 1.01X or more, more preferably 1.03X or more, and still more preferably 1.06X or more.

  As the diameter of the dicing layer is larger than the diameter of the base material layer, the work of attaching an annular dicing ring to the outer peripheral portion of the dicing layer becomes easier, and the dicing layer attached to the dicing ring is peeled off. Can be suppressed. The absolute value of the difference between the diameter of the dicing layer and the diameter of the base material layer is preferably 0.001X or more, more preferably 0.01X or more, still more preferably 0.02X or more, and still more preferably 0.00. 04X or more.

  The diameter of the dicing layer is preferably the same as the outer diameter of the dicing ring or smaller than the outer diameter of the dicing ring.

  In the dicing die-bonding tape according to the present invention, the diameter of the partial region of the base material layer may be larger than the diameter of the dicing layer, and the diameter of the partial region of the base material layer is 0.91X. (Or less than the preferred upper limit). However, a part of the region in which the diameter of the base material layer is larger than the diameter of the dicing layer or a part of the base material layer in which the diameter of the base material layer is less than 0.91X (or less than a preferable upper limit) Is preferably 30% or less, more preferably 20% or less, still more preferably 10% or less, particularly preferably 5% or less, and most preferably 0%. . In other words, the region where the diameter of the base material layer is smaller than the diameter of the dicing layer or the region where the diameter of the base material layer is 0.91X or more (or a preferred lower limit or more) is 70 on the outer periphery of the base material layer. % Or more, preferably 80% or more, more preferably 90% or more, particularly preferably 95% or more, and most preferably 100%. The more the region where the diameter of the base material layer is smaller than the diameter of the dicing layer or the diameter of the base material layer is 0.91X or more (or the preferred lower limit or more), the more the adhesive layer alone is further increased. It is possible to cut accurately.

  In the dicing die bonding tape according to the present invention, the diameter of a part of the dicing layer may be 1X or less. However, the partial area where the diameter of the dicing layer is 1X or less (or a preferable upper limit or less) is preferably 30% or less, more preferably 20% or less of the outer periphery of the dicing layer. % Or less is more preferable, 5% or less is particularly preferable, and 0% is most preferable. In other words, the region where the diameter of the dicing layer is 1X or more (or a preferable lower limit or more) is preferably 70% or more of the outer periphery of the dicing layer, more preferably 80% or more, and 90% or more. Is more preferable, 95% or more is particularly preferable, and 100% is most preferable. The more the region where the diameter of the dicing layer is 1X or more (or the preferred lower limit or more), the more the peeling of the dicing layer attached to the dicing ring can be further suppressed.

  The method for producing a semiconductor chip with an adhesive layer according to the present invention uses the above-described dicing die bonding tape or the above-described kit for producing a semiconductor chip with an adhesive layer, and a protective sheet and the protective sheet. The adhesive layer of the dicing die-bonding tape is used to form the laminated body using a laminated body having a divided semiconductor wafer that is laminated on one surface of the semiconductor chip and divided into individual semiconductor chips. A step of attaching to the semiconductor wafer after the division, a step of attaching the dicing layer to the annular dicing ring, a step of peeling the protective sheet from the semiconductor wafer after the division, the adhesive layer and the above By stretching the base material layer, the adhesive layer is cut along the cut portion of the semiconductor wafer after the division, and After the step of separating the individual semiconductor chips in the rear semiconductor wafer and dicing, the adhesive layer to which the semiconductor chip is attached is peeled from the base material layer, and the semiconductor chip is removed from the adhesive layer. And a step of taking out the entire layer.

  In the method for manufacturing a semiconductor chip with an adhesive layer according to the present invention, the adhesive layer and the base material layer are stretched to form the adhesive layer by cutting the divided semiconductor wafer. Can be cut with high precision. As a result, the pick-up property of the semiconductor chip with an adhesive layer can be enhanced.

  Hereinafter, the present invention will be clarified by describing specific embodiments and examples of the present invention with reference to the drawings.

(Dicing die bonding tape)
1A and 1B are diagrams schematically showing a dicing die bonding tape according to an embodiment of the present invention. Fig.1 (a) is a partial notch top view, FIG.1 (b) is a partial notch front sectional drawing which follows the II line | wire in Fig.1 (a). In FIG. 1 and the drawings to be described later, for the convenience of illustration, dimensions and sizes are appropriately changed from actual dimensions and sizes.

  As shown in FIGS. 1A and 1B, the dicing die bonding tape 1 has a long release layer 2. On the upper surface 2 a of the release layer 2, the adhesive layer 3, the base material layer 4, and the dicing layer 5 are laminated in this order. A base material layer 4 is laminated on one surface 3 a (first surface) of the adhesive layer 3. A release layer 2 is laminated on the other surface 3 b (second surface) of the adhesive layer 3. The adhesive layer 3 is laminated on one surface 4 a (first surface) of the base material layer 4. A dicing layer 5 is laminated on the other surface 4 b (second surface) opposite to the adhesive layer 3 side of the base material layer 4.

  A plurality of laminates having an adhesive layer 3, a base material layer 4 and a dicing layer 5 are arranged at equal intervals on the upper surface 2 a of the long release layer 2. A protective sheet may be provided on the upper surface 2a of the release layer 2 on the side of the laminate.

  The planar shapes of the adhesive layer 3 and the base material layer 4 are substantially circular. The planar shape of the dicing layer 5 is substantially circular. The diameter of the adhesive layer 3 may be the same as or different from the diameter of the base material layer 4. The diameter of the base material layer 4 is preferably larger than the diameter of the adhesive layer 3. It is preferable that the outer peripheral side surface of the base material layer 4 projects outward from the outer peripheral side surface 3 c of the adhesive layer 3. Moreover, it is preferable that the outer peripheral side surface of the base material layer 4 is not covered with the adhesive layer 3, and it is preferable that it does not have adhesiveness. When the size of the adhesive layer 3 and the base material layer 4 satisfies such a preferable relationship, the position where the base material layer 4 is provided when the semiconductor wafer is attached to the adhesive layer 3 The semiconductor wafer can be accurately aligned with the portion corresponding to. In addition, the semiconductor wafer can be more reliably attached to the adhesive layer 3.

  The diameter of the dicing layer 5 is larger than the diameters of the adhesive layer 3 and the base material layer 4. The outer peripheral side surface of the dicing layer 5 projects outward from the outer peripheral side surfaces of the adhesive layer 3 and the base material layer 4. Even when the size of the dicing layer 5 and the adhesive layer 3 and the base material layer 4 satisfies such a preferable relationship, the adhesive is adhered when the semiconductor wafer is attached to the adhesive layer 3. The semiconductor wafer can be accurately aligned with the portion of the agent layer 3 where the base material layer 4 is attached. After pasting, the base material layer 4 can be reliably disposed on the one surface 3a of the adhesive layer 3 to which the semiconductor wafer is pasted. For this reason, the semiconductor chip with the adhesive agent layer 3 can be easily peeled from the base material layer 4 after dicing by improving the peelability of the adhesive layer 3 from the base material layer 4. In particular, when the base material layer 4 is a non-adhesive layer having non-adhesive properties, the semiconductor chip with the adhesive layer 3 can be more easily peeled from the base material layer 4. For this reason, production loss can be reduced and yield can be improved. Furthermore, since the dicing ring and the semiconductor wafer can be attached to different layers, the adhesive layer 3, the base material layer 4, and the dicing layer 5 can be made of optimum materials, respectively. For this reason, cutting property and pick-up property, and the joining reliability after die bonding can be made high.

  The release layer 2 is, for example, a release film. The release layer 2 is used for protecting the other surface 3b to which the semiconductor wafer of the adhesive layer 3 is attached. Note that the release layer 2 is not necessarily used.

  The material constituting the release layer 2 includes polyester resins such as polyethylene terephthalate resin, polytetrafluoroethylene resins, polyethylene resins, polypropylene resins, polymethylpentene resins, polyolefin resins such as polyvinyl acetate resins, and polyvinyl chloride resins. And plastic resins such as polyimide resins.

  The surface of the release layer 2 may be subjected to a release treatment. The release layer may be a single layer or a plurality of layers. When the release layer is a plurality of layers, each layer may be formed of different resins.

  From the viewpoint of further improving the handleability or releasability of the release layer 2, the thickness of the release layer 2 is preferably 10 μm or more, and preferably 100 μm or less.

  The adhesive layer 3 is a layer used for die bonding of a semiconductor chip. The adhesive layer 3 is used for bonding a semiconductor chip to a substrate or another semiconductor chip.

  The adhesive layer 3 is formed of, for example, a curable resin composition containing a curable compound such as an appropriate curable resin, or a thermoplastic resin. Since the curable resin composition before curing is soft, it is easily deformed by an external force. After obtaining the semiconductor chip with the adhesive layer 3, the obtained semiconductor chip with the adhesive layer 3 is laminated on an adherend such as a substrate from the adhesive layer 3 side. Thereafter, the semiconductor chip can be firmly bonded to the adherend via the adhesive layer 3 by applying heat or light energy to cure the adhesive layer 3.

  A curing agent is used for curing the curable resin composition. Examples of the curing agent include heat curing acid anhydride curing agents such as trialkyltetrahydrophthalic anhydride, latent curing agents such as phenol curing agents, amine curing agents or dicyandiamide, and cationic catalyst curing. Agents and the like. In order to adjust the curing speed or the physical properties of the cured product, the curing agent and the curing accelerator may be used in combination.

  The thickness of the adhesive layer 3 is not particularly limited. The thickness of the adhesive layer 3 is preferably 1 μm or more, and preferably 100 μm or less. The thickness of the adhesive layer 3 is more preferably 3 μm or more, and more preferably 60 μm or less. When the thickness of the adhesive layer 3 is not less than the above lower limit and not more than the above upper limit, it is easy to attach the semiconductor chip, and it is possible to cope with the thinning of the semiconductor device.

  The base material layer 4 may have adhesiveness, and may have non-adhesiveness. It is preferable that the base material layer 4 has non-adhesiveness.

  The term “non-adhesive” includes not only the surface having no adhesiveness but also the case where the surface has such an adhesiveness that it does not stick when touched with a finger. Specifically, “non-adhesive” means that when the base material layer 4 is attached to a stainless steel plate and the base material layer 4 is peeled off at a peeling speed of 300 mm / min, the adhesive strength is 0.05 N / 25 mm width. It means the following.

  The base material layer 4 can be formed using, for example, an active energy ray-curable or thermosetting adhesive composition. In order for the base material layer 4 to have non-adhesiveness, the irradiation amount of the active energy rays may be increased. In order to make the base material layer 4 have adhesiveness, it is only necessary not to irradiate active energy rays or to reduce the irradiation amount of active energy rays.

  The base material layer 4 is preferably formed of a composition containing an acrylic polymer. The base material layer 4 is preferably formed of a crosslinked body obtained by crosslinking a composition containing an acrylic polymer. In this case, the machinability during dicing can be further enhanced. Further, the polarity, storage elastic modulus, or elongation at break of the base material layer 4 can be easily controlled and designed.

  The acrylic polymer is not particularly limited. The acrylic polymer is preferably a (meth) acrylic acid alkyl ester polymer. As the (meth) acrylic acid alkyl ester polymer, a (meth) acrylic acid alkyl ester polymer having an alkyl group having 1 to 18 carbon atoms is suitably used. By using a (meth) acrylic acid alkyl ester polymer having an alkyl group having 1 to 18 carbon atoms, the polarity of the base material layer 4 is sufficiently low, the surface energy of the base material layer 4 is low, and an adhesive. The peelability of the layer 3 from the base material layer 4 is increased.

  The composition preferably contains at least one of an active energy ray reaction initiator and a thermal reaction initiator, and more preferably contains an active energy ray reaction initiator. The active energy ray reaction initiator is preferably a photoreaction initiator.

  The active energy rays include ultraviolet rays, electron rays, α rays, β rays, γ rays, X rays, infrared rays and visible rays. Among these active energy rays, ultraviolet rays or electron beams are preferable because they are excellent in curability and hardened products are hardly deteriorated.

  As the photoreaction initiator, for example, a photo radical generator or a photo cation generator can be used. Examples of the thermal reaction initiator include a thermal radical generator. An isocyanate-based crosslinking agent may be added to the composition in order to control the adhesive force.

  The thickness of the base material layer 4 is not particularly limited. The thickness of the base material layer 4 is preferably 1 μm or more, and preferably 100 μm or less. The thickness of the base material layer 4 is more preferably 5 μm or more, and more preferably 60 μm or less. When the thickness of the base material layer 4 is not less than the above lower limit, the expandability is further enhanced. When the thickness of the base material layer 4 is not more than the above upper limit, the thickness becomes even more uniform and the accuracy of dicing is further improved.

  The dicing layer 5 has a base material 5A and an adhesive layer 5B laminated on one surface (first surface) of the base material 5A. A dicing layer 5 is attached to the other surface 4b of the base material layer 4 from the adhesive layer 5B side. The dicing layer 5 is indirectly attached to the adhesive layer 3 through the base material layer 4.

  The dicing layer 5 has an extension portion 5 x that projects outward from the outer peripheral side surfaces of the adhesive layer 3 and the base material layer 4. One side of the extension portion 5x of the dicing layer 5 is attached to the upper surface 2a of the release layer 2 by the adhesive layer 5B. That is, the dicing layer 5 is attached to the upper surface 2 a of the release layer 2 in a region outside the outer peripheral side surfaces of the adhesive layer 3 and the base material layer 4.

  The dicing layer 5 has the extension 5x because the extension 5x positioned outside the outer peripheral side surface 3c of the adhesive layer 3 when the semiconductor wafer is attached to the surface 3b of the adhesive layer 3. This is for attaching a dicing ring to the pressure-sensitive adhesive layer 5B.

  Materials constituting the base material 5A of the dicing layer 5 include polyester resins such as polyethylene terephthalate resin, polytetrafluoroethylene resins, polyethylene resins, polypropylene resins, polymethylpentene resins, polyolefin resins such as polyvinyl acetate resins, poly Examples thereof include plastic resins such as vinyl chloride resin and polyimide resin. Of these, polyolefin resin is suitably used because of its excellent expandability and low environmental impact.

  The pressure-sensitive adhesive layer 5B is not particularly limited. Specific examples of the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer 5B include an acrylic pressure-sensitive adhesive, a special synthetic rubber-based pressure-sensitive adhesive, a synthetic resin-based pressure-sensitive adhesive, and a rubber-based pressure-sensitive adhesive. Of these, a pressure-sensitive acrylic pressure-sensitive adhesive is preferable. When a pressure-sensitive type acrylic pressure-sensitive adhesive is used, the dicing ring can be more easily peeled off from the pressure-sensitive adhesive layer 5B. Furthermore, the cost of the pressure-sensitive adhesive layer 5B can be reduced. The peeling force between the base material layer 4 and the dicing layer 5 is preferably larger than the peeling force between the adhesive layer 3 and the base material layer 4. It is preferable that the pressure-sensitive adhesive layer 5B is configured to satisfy such a peeling force.

  The thickness of the dicing layer 5 is not particularly limited. The thickness of the dicing layer 5 is preferably 10 μm or more, and preferably 200 μm or less. The thickness of the dicing layer 5 is more preferably 60 μm or more, and more preferably 150 μm or less. When the thickness of the dicing layer 5 is not less than the above lower limit and not more than the above upper limit, the peelability of the release layer 2 and the expandability of the dicing layer 5 are further enhanced.

  In the dicing-die bonding tape 1 shown in FIGS. 1A and 1B, the dicing layer 5 is substantially circular. 2A and 2B show a modification of the dicing die bonding tape. The dicing die bonding tape 1 shown in FIGS. 1A and 1B is different from the dicing die bonding tape 11 shown in FIG. 2 only in the shape of the dicing layer. The dicing layer 5 in the dicing die bonding tape 1 and the dicing layer 12 in the dicing die bonding tape 11 are both substantially circular. The dicing layer 12 in the dicing-die bonding tape 11 has a sticking start point 12C. More specifically, the dicing layer 12 has a circular shape except for the sticking start point 12C. In the dicing layer 12, with respect to the diameter of the dicing layer 12, the diameter of the portion excluding the sticking start point 12 satisfies the above-described relationship. The dicing layer 12 has an extension portion 12 x that protrudes outward from the outer peripheral side surfaces of the adhesive layer 3 and the base material layer 4. One surface of the extension portion 12x of the dicing layer 12 is attached to the upper surface 2a of the release layer 2 by the adhesive layer 12B.

  Thus, it is preferable that the sticking origin is provided in the one part area | region of the dicing layer. Moreover, it is preferable that a plurality of sticking start points are provided in one dicing layer, and it is preferable that at least two sticking start points are provided. When a plurality of sticking start points are provided in one dicing layer, the sticking start points are preferably provided on one end side of the dicing layer and the other end side opposite to the one end side. In this case, the directionality when using the dicing die bonding tape can be eliminated. In addition, for example, when the dicing layer cannot be well pasted from the sticking starting point on one end side, the dicing layer can be stuck from the sticking starting point on the other end side. More specifically, when the dicing layer cannot be applied well from the application starting point on one end side, after winding up the long dicing die bonding tape once and then unwinding it again, A dicing layer can be pasted from the pasting starting point.

  In the dicing die bonding tape 1 shown in FIGS. 1A and 1B, the dicing layer 5 has a multilayer structure in which a base material 5A and an adhesive layer 5B are laminated. A single-layer dicing layer 16 may be formed as in the dicing-die bonding tape 16 shown in FIGS. In this case, it is preferable to form the dicing layer 16 with an adhesive material.

(Manufacturing method of semiconductor chip with adhesive layer)
Next, an example of a method for manufacturing a semiconductor chip with an adhesive layer when the dicing die bonding tape 1 shown in FIGS. 1A and 1B is used will be described.

  First, it has a dicing die bonding tape 1 and a laminate 21.

  As illustrated in FIG. 4D, the stacked body 21 includes a protective sheet 22 and a divided semiconductor wafer 23 that is stacked on one surface 22 a (first surface) of the protective sheet 22. After the division, the semiconductor wafer 23 is divided into individual semiconductor chips. The planar shape of the divided semiconductor wafer 23 is substantially circular.

  The laminated body 21 can be obtained as follows through the respective steps shown in FIGS.

  First, as shown in FIG. 4A, a semiconductor wafer 23A is prepared. The semiconductor wafer 23A is a pre-division semiconductor wafer. The planar shape of the semiconductor wafer 23A is substantially circular. On the surface 23a of the semiconductor wafer 23A, circuits for forming individual semiconductor chips are formed in each region partitioned by streets in a matrix.

  As shown in FIG. 4B, the prepared semiconductor wafer 23A is diced from the surface 23a side. After the dicing, the semiconductor wafer 23A is not divided. On the surface 23a of the semiconductor wafer 23A, cuts 23c for dividing into individual semiconductor chips are formed. The dicing is performed using, for example, a dicing apparatus including a blade that rotates at high speed.

  Next, as shown in FIG. 4C, a protective sheet 22 is attached to the surface 23a of the semiconductor wafer 23A. Thereafter, the back surface 23b of the semiconductor wafer 23A is ground to reduce the thickness of the semiconductor wafer 23A. Here, the back surface 23b of the semiconductor wafer 23A is ground to the notch 23c portion. In this way, the laminate 21 shown in FIG. 4D can be obtained.

  The back surface 23b of the semiconductor wafer 23A is preferably ground to the notch 23c portion. Grinding is performed using a grinder such as a grinder equipped with a grinding magnet or the like. At the time of grinding, since the protective sheet 22 is affixed to the surface 23a of the semiconductor wafer 23A, grinding waste does not adhere to the circuit. Moreover, even if the semiconductor wafer 23A is divided into individual semiconductor chips after grinding, the plurality of semiconductor chips remain attached to the protective sheet 22 without being separated.

  After obtaining the laminated body 21, the laminated body 21 is mounted on the stage 25 from the protective sheet 22 side, as shown to Fig.5 (a). An annular dicing ring 26 is provided on the stage 25 at a position spaced apart from the outer peripheral side surface of the divided semiconductor wafer 23 by a predetermined distance. The other surface 3b of the exposed adhesive layer 3 is separated from the rear surface 23b of the semiconductor wafer 23 after being divided while peeling the release layer 2 of the dicing die bonding tape 1 or after peeling the release layer 2. paste. Further, the pressure-sensitive adhesive layer 5 </ b> B located at the extended portion 5 x of the exposed dicing layer 5 is attached to the annular dicing ring 26.

  FIG. 7A is a front sectional view showing a state when the dicing layer 5 is attached to the dicing ring 26, and FIG. 7B is a plan view showing the state after the dicing layer 5 is attached to the dicing ring 26. Show.

  As shown in FIGS. 7A and 7B, when the dicing layer 5 is attached to the dicing ring 26, the dicing layer 5 is usually peeled from the upper surface 2a of the release layer 2 using the peeling edge 32. To do. The dicing layer 5 is attached to the dicing ring 26 and pressed by the roll 31. And the outer peripheral part of the dicing layer 5 is extended, extending the adhesive layer 3, the base material layer 4, and the dicing layer 5 so that a wrinkle may not arise in the adhesive layer 3, the base material layer 4, and the dicing layer 5. Is attached to the dicing ring 26. In FIG. 7B, the base material layer 4 has a diameter A, the dicing layer 5 has a diameter B, the dicing ring 26 has an inner diameter X, and the dicing ring 26 has an outer diameter Y.

  After the dicing layer 5 is attached to the dicing ring 26, as shown in FIG. 5B, the divided semiconductor wafer 23 to which the adhesive layer 3 is attached is taken out from the stage 25 and turned over. At this time, the dicing ring 26 is taken out with the dicing ring 26 attached to the dicing layer 5. The separated semiconductor wafer 23 taken out is turned over so that the front surface 23a faces upward, and is placed on another stage 27.

  Next, as shown in FIG. 6A, the protective sheet 22 is peeled from the surface 23 a of the divided semiconductor wafer 23. When the protective sheet 22 is peeled off, the protective sheet 22 may be heated to facilitate peeling. However, it is preferable not to modify the adhesive layer 3 when the protective sheet 22 is heated.

  Next, as shown in FIG.6 (b), the adhesive layer 3, the base material layer 4, and the dicing layer 5 are extended, and only an adhesive layer is cut | disconnected. At this time, the semiconductor chips 23 are cut along the cut portions 23 c of the divided semiconductor wafer 23, and the individual semiconductor chips in the divided semiconductor wafer 23 are separated. Since the adhesive layer 3 is attached to the back surface 23b of the divided semiconductor wafer 23, the adhesive layer 3 along the cut portion 23c of the divided semiconductor wafer 23, that is, along the dicing line. Can be cut. After the cutting of the adhesive layer 3, a cut portion 3 c is formed in the adhesive layer 3.

  In the present specification, stretching and cutting the adhesive layer 3 is also referred to as splitting. Dicing is also included in the work (split) for extending and cutting the adhesive layer 3, and the dicing die bonding tape 1 is used for extending and cutting (split) the adhesive layer 3. Can be used. In other words, the dicing-die bonding tape 1 is a split-die bonding tape.

  As a method of extending the adhesive layer 3, for example, it is pushed up from below the adhesive layer 3, and the adhesive layer 3, the base material layer 4 and the dicing layer 5 are shown in FIG. A method for applying the force A can be mentioned. By applying the force A, as a result, forces B1 and B2 that are pulled outward are applied to the adhesive layer 3, the base material layer 4, and the dicing layer 5, and the adhesive layer 3 is stretched.

  The magnitude | size of the base material layer 4 and the dicing layer 5 satisfy | fills the said specific relationship. Therefore, by extending the adhesive layer 3, the base material layer 4, and the dicing layer 5, the adhesive layer is cut along the cut portion 23 c of the divided semiconductor wafer 23 without cutting the base material layer 4. Only the layer 3 can be cut with high accuracy. For this reason, chipping of the adhesive layer 3 hardly occurs below the semiconductor chip. Since the adhesive layer 3 can be cut accurately, the pick-up property of the semiconductor chip with the adhesive layer 3 is improved. Since chipping of the adhesive layer 3 is unlikely to occur, when a semiconductor chip with an adhesive layer is laminated and adhered to a member to be bonded, the semiconductor chip is difficult to tilt and the bonding reliability of the semiconductor chip is high. Become.

  It is preferable that the adhesive layer 3 is not modified before or during the stretching of the adhesive layer 3, the base material layer 4, and the dicing layer 5. Before or during stretching the adhesive layer 3, the base material layer 4, and the dicing layer 5, in order to modify the adhesive layer 3, the adhesive layer 3 is not heated and cooled, and laser It is preferable not to irradiate light. Before or during stretching the adhesive layer 3, the base material layer 4, and the dicing layer 5, the adhesive layer 3 is heated (the protective sheet 22 is peeled off) in order to modify the adhesive layer 3. It is preferable that the laser beam is not irradiated and the laser beam is not irradiated. However, the adhesive layer 3 may be modified. When the adhesive layer 3 is not modified, the manufacturing efficiency of the semiconductor chip with the adhesive layer 3 is considerably increased.

  After cutting the adhesive layer 3, the semiconductor chip is peeled off from the base material layer 4 together with the adhesive layer 3 in a state where the adhesive layer 3 is laminated and taken out. In this way, a semiconductor chip with the adhesive layer 3 can be obtained. When the dicing die-bonding tape 1 is used, the non-adhesive base material layer 4 is located below the adhesive layer 3 portion to which the semiconductor wafer 23 after division is attached. Therefore, the pick-up property of the semiconductor chip with the adhesive layer 3 is improved. After cutting the adhesive layer 3, before the semiconductor chip with the adhesive layer 3 is peeled from the base layer 4, the dicing layer 5 is extended to further expand the interval between the individual semiconductor chips. Also good.

  Hereinafter, the present invention will be specifically described by giving examples and comparative examples. The present invention is not limited to the following examples.

(Acrylic polymer 1)
95 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of 2-hydroxyethyl acrylate, 0.2 parts by weight of Irgacure 651 (manufactured by Ciba Japan, 50% ethyl acetate solution) as a photo radical generator, and 0.01 lauryl mercaptan A part by weight was dissolved in ethyl acetate to obtain a solution. Polymerization was performed by irradiating this solution with ultraviolet rays to obtain an ethyl acetate solution of the polymer. Further, 100 parts by weight of the solid content of this solution was reacted with 3.5 parts by weight of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko KK, Karenz MOI) to give an acrylic copolymer (acrylic polymer 1). Obtained. The obtained acrylic polymer 1 had a weight average molecular weight of 700,000 and an acid value of 0.86 (mgKOH / g).

  Moreover, the following compounds were prepared as a material which comprises the composition for forming a base material layer.

(Photopolymerization initiator)
Irgacure 651 (Ciba Japan)

(Oligomer)
U324A: manufactured by Shin-Nakamura Chemical Co., Ltd., urethane acrylic oligomer (10 functional urethane acrylic oligomer), weight average molecular weight: 1,300

(Crosslinking agent)
Coronate L-45: Nippon Polyurethane Industry Co., Ltd., isocyanate-based crosslinking agent

(Dicing layer)
A polyethylene film as a dicing layer having a thickness of 100 μm was manufactured by a T-die method using polyethylene (manufactured by Prime Polymer Co., Ltd., M12) as a raw material.

Example 1
In Example 1, the dicing die bonding tape shown in FIGS. 1A and 1B was formed.

  100 parts by weight of the acrylic polymer 1, 1 part by weight of Irgacure 651, 15 parts by weight of U324A, which is a urethane acrylic oligomer, and 1 part by weight of Coronate L-45 were blended to obtain a composition. The obtained composition was coated on a release PET (polyethylene terephthalate) film, dried at 110 ° C. for 5 minutes, the solvent was removed, and a composition layer was formed.

Next, the entire region of the obtained composition layer was irradiated with light so as to have an energy of 2000 mJ / cm ² using a mercury lamp, thereby curing the composition layer. Thus, the base material layer (thickness 20 micrometers) which is a non-adhesion layer which has non-adhesiveness was obtained.

  Using the obtained base material layer, a dicing die bonding tape was produced in the following manner.

  15 parts by weight of G-2050M (manufactured by NOF Corporation, epoxy-containing acrylic polymer, weight average molecular weight Mw 200,000), 70 parts by weight of EXA-7200HH (manufactured by DIC, dicyclopentadiene type epoxy), and HP-4032D (DIC Corporation) Manufactured by Naphthalene Epoxy), 15 parts by weight, 38 parts by weight of YH-309 (manufactured by Mitsubishi Chemical Corporation, acid anhydride curing agent), 8 parts by weight of 2MAOK-PW (manufactured by Shikoku Kasei Co., Ltd., imidazole), and S320 ( 2 parts by weight of Chisso Corporation (aminosilane) and 4 parts by weight of MT-10 (Tokuyama Corporation, surface hydrophobized fumed silica) were blended to obtain a blend. The obtained blend was added to methyl ethyl ketone (MEK) as a solvent so as to have a solid content of 60% by weight and stirred to obtain a coating solution.

  The obtained coating liquid was applied on a release PET film so as to have a thickness of 7 μm, and dried by heating in an oven at 110 ° C. for 2 minutes. In this way, an adhesive layer was formed on the release PET film. Thereafter, the adhesive layer was cut into a circle.

  Next, the obtained base material layer was laminated at 60 ° C. on the surface of the adhesive layer opposite to the release PET fill side to obtain a laminate. The base material layer was cut out in a circle so that the base material layer was larger than the adhesive layer, and the base material layer had a region projecting laterally from the outer peripheral side surface of the adhesive layer.

  Then, on the surface opposite to the adhesive layer side of the base material layer, an acrylic adhesive layer (adhesive layer) on one side of ELEGrip UHP-0810FX (olefin base material (base material thickness 80 μm)) which is a dicing layer A UV curable dicing tape (manufactured by Denki Kagaku Kogyo Co., Ltd.) on which the thickness of the adhesive layer was 10 μm) was attached from the adhesive layer side.

  Thereafter, the dicing layer was cut out. In this way, a dicing die bonding tape having a four-layer laminated structure in which the release PET film / adhesive layer / base material layer / dicing layer was laminated in this order was produced. In the obtained dicing die-bonding tape, the diameters of the adhesive layer, the base material layer, and the dicing layer were values shown in Table 1 below.

  Further, a dicing ring having an inner diameter and an outer diameter shown in Table 1 below was prepared.

(Evaluation)
A notch with a depth of 100 μm was made on the surface of a semiconductor wafer (silicon wafer, thickness 80 μm) having a diameter of 300 mm (12 inches). Next, the back grinding tape ICROS SB135S-BN (manufactured by Mitsui Chemicals Co., Ltd., with an acrylic adhesive applied to one side of the olefin) was laminated on the surface of the semiconductor wafer from the acrylic adhesive side. Next, the back surface of the semiconductor wafer was polished and mirror-finished until the thickness of the semiconductor wafer reached 50 μm. Thus, the laminated body of the protection sheet and the semiconductor wafer after a division | segmentation was obtained.

  Next, using a wafer mounter DAM-812M (manufactured by Takatori), a dicing die bonding tape was attached to the back surface of the semiconductor wafer and the dicing ring after the laminate was divided. The stage on which the semiconductor wafer was placed after the division of the laminate was set to 60 ° C.

  Next, the divided semiconductor wafer with the adhesive layer attached was taken out of the stage, turned over, and placed on another stage. Thereafter, the protective sheet was peeled off at 60 ° C. from the surface of the divided semiconductor wafer. At this time, the adhesive layer was not modified.

  Using the bonder bestem D-02 (manufactured by Canon Machinery Co., Ltd.), the adhesive layer, the base material layer, and the dicing layer were stretched at 25 ° C. with an expanding amount of 4.5 mm, and the adhesive layer was cut. .

  After the cutting of the adhesive layer, the ratio of the number of individual semiconductor chips in which the pressure-sensitive adhesive layer was cut along the cut portions of the divided semiconductor wafer was evaluated.

  Next, after splitting, using a die bonder best D-02 (made by Canon Machinery Co., Ltd.), a semiconductor with 20 adhesive layers under the conditions of a collet size of 8 mm square, a push-up speed of 5 mm / second, and a pickup temperature of 25 ° C. Chips were picked up continuously. The pick-up property of the semiconductor chip with an adhesive layer was determined according to the following criteria.

[Pickup criteria]
○: No semiconductor chip with adhesive layer that could not be picked up ×: With semiconductor chip with adhesive layer that could not be picked up

  The results are shown in Table 1 below.

DESCRIPTION OF SYMBOLS 1 ... Dicing die-bonding tape 2 ... Release layer 2a ... Upper surface 3 ... Adhesive layer 3a ... One surface 3b ... Other surface 3c ... Outer peripheral side 3d ... Cutting part 4 ... Base material layer 4a ... One surface 4b ... the other surface 5 ... dicing layer 5A ... substrate 5B ... adhesive layer 5x ... extension 11, 16 ... dicing die bonding tape 12, 17 ... dicing layer 12A ... substrate 12B ... adhesive layer 12C ... sticking origin 12x ... Extension part 21 ... Laminated body 22 ... Protective sheet 22a ... One surface 23 ... Semiconductor wafer 23A after division | segmentation 23A ... Semiconductor wafer 23a ... Front surface 23b ... Back surface 23c ... Incision 25 ... Stage 26 ... Dicing ring 27 ... Stage 31 ... Roll 32 ... Peeling edge

Claims (9)

An adhesive layer;
A base material layer laminated on one surface of the adhesive layer;
A dicing layer laminated on the surface opposite to the pressure-sensitive adhesive layer side of the base material layer,
At the time of dicing, an annular dicing ring is attached to the outer peripheral portion of the dicing layer,
The diameter of the dicing layer is larger than the diameter of the base material layer,
A dicing die bonding tape, wherein when the inner diameter of the dicing ring is X, the diameter of the dicing layer exceeds 1X and the diameter of the base material layer is 0.91X or more.   The dicing die bonding tape according to claim 1, wherein the base material layer is a non-adhesive layer having non-adhesiveness.   The dicing die-bonding tape according to claim 1 or 2, wherein the base material layer is formed of a crosslinked body obtained by crosslinking a composition containing an acrylic polymer. Dicing-a production kit for a semiconductor chip with an adhesive layer having a die bonding tape and an annular dicing ring,
The dicing die bonding tape has an adhesive layer,
A base material layer laminated on one surface of the adhesive layer;
A dicing layer laminated on the surface opposite to the pressure-sensitive adhesive layer side of the base material layer,
At the time of dicing, the annular dicing ring is attached to the outer peripheral portion of the dicing layer,
The diameter of the dicing layer is larger than the diameter of the base material layer,
A kit for producing a semiconductor chip with an adhesive layer, wherein the diameter of the dicing layer exceeds 1X and the diameter of the base material layer is 0.91X or more, where X is the inner diameter of the dicing ring.   The kit for producing a semiconductor chip with an adhesive layer according to claim 4, wherein the base material layer is a non-adhesive layer having non-adhesive properties.   The kit for producing a semiconductor chip with an adhesive layer according to claim 4 or 5, wherein the base material layer is formed of a crosslinked body obtained by crosslinking a composition containing an acrylic polymer. Using the dicing die bonding tape according to any one of claims 1 to 3, and
Using a laminated body having a divided semiconductor wafer that is laminated on one surface of the protective sheet and the protective sheet and is divided into individual semiconductor chips,
Attaching the adhesive layer of the dicing die-bonding tape to the semiconductor wafer after the division of the laminate;
Attaching the dicing layer to an annular dicing ring;
Peeling the protective sheet from the divided semiconductor wafer;
By stretching the adhesive layer and the base material layer, the adhesive layer is cut along the cut portions of the divided semiconductor wafers, and the individual semiconductors in the divided semiconductor wafers A step of separating the chips;
A semiconductor with an adhesive layer, comprising: after dicing, peeling off the adhesive layer to which the semiconductor chip is attached from the base material layer and taking out the semiconductor chip together with the adhesive layer. Chip manufacturing method. An individual semiconductor chip, wherein the semiconductor chip production kit according to any one of claims 4 to 6 is used and is laminated on one surface of the protective sheet and the protective sheet. Using a laminated body having a semiconductor wafer after division that is divided into
Attaching the adhesive layer of the dicing die-bonding tape to the semiconductor wafer after the division of the laminate;
Attaching the dicing layer to the annular dicing ring;
Peeling the protective sheet from the divided semiconductor wafer;
By stretching the adhesive layer and the base material layer, the adhesive layer is cut along the cut portions of the divided semiconductor wafers, and the individual semiconductors in the divided semiconductor wafers A step of separating the chips;
A semiconductor with an adhesive layer, comprising: after dicing, peeling off the adhesive layer to which the semiconductor chip is attached from the base material layer and taking out the semiconductor chip together with the adhesive layer. Chip manufacturing method. Forming a notch for dividing the semiconductor wafer into individual semiconductor chips on the surface of the semiconductor wafer;
A step of attaching a protective sheet to the surface of the semiconductor wafer in which the cuts are formed;
The adhesive contact according to claim 7, further comprising: grinding the back surface of the semiconductor wafer to which the protective sheet is attached, dividing the semiconductor wafer into individual semiconductor chips, and obtaining the stacked body. Manufacturing method of semiconductor chip with adhesive layer.

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