KR101649020B1 - Adhesive film, and dicing/die bonding film and method for processing semiconductor using said dicing/die bonding film - Google Patents

Abstract

A resin composition comprising an epoxy compound in an amount of 9 mass% or more and 30 mass% or less, an acrylic copolymer in an amount of 10 mass% or more and 45 mass% or less, and an inorganic filler in an amount of 15 mass% or more, (Meth) acrylic acid alkyl ester component as a constitutional unit, wherein the number of carbon atoms of the alkyl group in the alkyl ester portion of at least one component of the alkyl (meth) acrylate component is 3 or less And the glass transition temperature is 26 占 폚 or more and 60 占 폚 or less in the B stage state and the acrylic copolymer and the epoxy compound form a homogeneous phase and the elongation at break is 3% or less.

Description

TECHNICAL FIELD [0001] The present invention relates to an adhesive film, a dicing die bonding film, and a semiconductor processing method using the adhesive film and a semiconductor processing method using the adhesive film and the dicing die bonding film.

The present invention relates to an adhesive film and a dicing die / bonding film and a semiconductor processing method using the same.

BACKGROUND ART [0002] In a manufacturing process of a semiconductor device such as an IC, a back grind process for grinding the back surface of a semiconductor wafer in order to make a semiconductor wafer thin after forming a circuit pattern, a back-grinding process for bonding a semiconductor wafer with a sticky and stretchable semiconductor wafer- A step of expanding a tape for processing a semiconductor wafer, a step of picking up a divided semiconductor chip, a step of bonding a picked up semiconductor chip to a lead frame or a package substrate, In the case of a stacked package, a die bonding process for laminating and bonding semiconductor chips to each other is performed. In such a manufacturing process, a dicing die bonding tape in which an adhesive film and an adhesive tape are laminated in this order on a base film is used.

In general, when a dicing / die bonding tape is used, an adhesive film of a dicing / die bonding tape is stuck on the back surface of a semiconductor wafer to fix the semiconductor wafer and a semiconductor wafer is diced using a dicing blade. The wafer and the adhesive film are diced in chip units. Then, in the pick-up process, the chip is peeled off from the adhesive tape together with the adhesive film, and is directly bonded to the lead frame or the package substrate through the adhesive film in the mounting process. By using the dicing die bonding tape in this manner, it becomes possible to directly adhere the chip with the adhesive film to the lead frame or the package substrate, so that the step of applying the adhesive agent and the step of adhering the die bonding film to each chip are omitted .

However, in the dicing step, since the semiconductor wafer and the adhesive layer are diced together using the dicing blade, the yield due to defects of the semiconductor wafer is lowered, and the adhesive film is contaminated by chips.

In order to solve the above problem, Patent Document 1 discloses a technique in which a surface protection tape is cut by cutting to a predetermined depth along a line to be divided without completely cutting the semiconductor wafer, and a back surface of the semiconductor wafer is cut to reach a predetermined depth The semiconductor wafer is divided by grinding until the wafer is divided by the so-called " previous dicing method ", and after the divided wafer is stuck to the dicing die bonding film, the dicing die bonding film is cooled A method is proposed in which the adhesive layer is smoothened and then expanded to divide the adhesive layer corresponding to individual chips. According to the method of dividing the adhesive layer using the tension at the time of expansion, chips of the adhesive are not generated and adverse effects are not caused.

Recently, a so-called " stealth dicing method ", which is capable of cutting a wafer in a noncontact manner by using a laser processing apparatus, has been proposed as a method of cutting a semiconductor wafer. For example, Patent Document 2 discloses a stealth dicing method in which a die bonding resin layer (adhesive layer) is interposed and laser light is irradiated to the interior of a semiconductor in which a sheet is stitched so that a multi- A step of forming a modified region by absorption of light and photons and forming a portion to be cut in the modified region, and a step of expanding the sheet while cooling the semiconductor, A method of cutting the same is disclosed.

As another method of cutting a semiconductor wafer using a laser processing apparatus, for example, Patent Document 3 discloses a method for manufacturing a semiconductor wafer, which includes a step of mounting an adhesive film (adhesive layer) for die bonding on the back surface of a semiconductor wafer, A step of dividing the protective adhesive tape into individual semiconductor chips by irradiating a laser beam along the streets from the surface of the semiconductor wafer adhered to the protective adhesive tape; A step of expanding (expanding) the protective adhesive tape to give a tensile force to the adhesive film to break the adhesive film for each semiconductor chip, a step of removing the relaxation of the tape caused by expansion by heat shrinkage, And separating the semiconductor chip to which the adhesive film is adhered from the protective adhesive tape Resolution method of wafer material has been proposed.

However, in the cooling step or the step of enlarging the large size as described above, a large system in which a sheet and a mechanism for expanding the sheet are covered and cooled, and a relaxation removing system by heat shrinkage are indispensable, The running cost is considerably high, and such a system is becoming a factor that is not widely spread. In addition, the cut line of the adhesive film at the time of expansion partially deviates from the cutting line of the chip, and a part of the adhesive film may be defective at the end portion of the chip, Can occur.

In the method of processing a semiconductor wafer using a dicing die-bonding film, if the system can be simplified and energy-saving can be achieved by eliminating the cooling mechanism, both the initial investment and the running cost can be greatly reduced. Therefore, the adhesive layer of the dicing die-bonding film must be easily separable at room temperature. Further, if the adhesive layer can be broken at a small elongation, it is not necessary to expand the tape greatly, and the heat shrinking system can be omitted.

In order to make the adhesive film of the dicing die-bonding film easily divisible at room temperature, it is necessary to weaken the tensile stress in the plane direction at room temperature. On the other hand, in the case where the adhesive film is excessively weak in the thickness direction stress, peeling occurs in the adhesive film layer, so that the semiconductor chips are extended at regular intervals, Can not be picked up. For example, Patent Document 4 describes a dicing die bonding film used as a processing method of a semiconductor wafer. However, since the content of the inorganic filler contained in the adhesive sheet constituting the dicing die-bonding film is large, the adhesive layer can not be broken unless it is broken at a large elongation.

Patent Document 1: Japanese Laid-Open Patent Publication No. 2005-57257 Patent Document 2: JP-A-2004-273895 Patent Document 3: JP-A-2002-334852 Patent Document 4: International Publication No. 2004/109786

It is an object of the present invention to provide an adhesive film which is likely to be torn in the plane direction while having a sufficient cohesive force so as not to cause peeling in the layer even when the semiconductor wafer is expanded at room temperature do.

In view of the above-described problems, the present inventors have conducted extensive studies. As a result, it has been found that, when an amorphous adhesive layer is formed using a composition containing a specific amount of an acrylic resin and an epoxy compound, there is a tendency that a film is not easily peeled in the layer but has a sufficient cohesive force, . Further, by dispersing the inorganic filler in such an amorphous solid, the stress relaxation property of the amorphous solid can be restricted by the inorganic filler while making the cohesive force more effective by utilizing the interaction between the inorganic filler surface and the organic material, I found something. The present invention is based on these findings.

According to the present invention, the following means are provided.

(1) A resin composition comprising an epoxy compound in an amount of 9 mass% or more and 30 mass% or less, an acrylic copolymer in an amount of 10 mass% or more and 45 mass% or less, and an inorganic filler in an amount of 15 mass%

Wherein the acrylic copolymer comprises at least two kinds of structural units containing at least one (meth) acrylic acid alkyl ester component as a structural unit,

The number of carbon atoms of the alkyl group in the alkyl ester portion of at least one component of the alkyl (meth) acrylate component is 3 or less,

Wherein the glass transition temperature is 26 占 폚 or higher and 60 占 폚 or lower in the B stage state and the acrylic copolymer and the epoxy compound form a homogeneous phase and the elongation at break is 3%

Adhesive film.

(2) A dicing die-bonding film laminated with an adhesive tape and the adhesive film described in (1) above.

(3) the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape is formed of a resin composition containing 80% by mass or more of an acrylic copolymer, and the acrylic copolymer contains a (meth) acrylic acid alkyl ester component as a constituent unit, The dicing die-bonding film as described in (2) above, wherein the alkyl group in the alkyl ester portion of the alkyl ester component has 7 or more carbon atoms.

(4) a step of cutting the surface of the semiconductor wafer to a predetermined depth along the line to be divided and attaching the surface protection tape, and grinding the back surface of the semiconductor wafer until the depth reaches a predetermined depth A dividing step,

And the dicing die bonding film described in the above (2) or (3) is applied to the dicing die bonding film in a state where the semiconductor wafer is heated at a temperature higher than the glass transition temperature of the adhesive film of the dicing die bonding film The process,

The step of dividing the adhesive film of the dicing die bonding film along the dividing line and the step of obtaining the semiconductor chip having the adhesive layer by expanding the dicing die bonding film at a temperature lower than the glass transition temperature of the adhesive film or at room temperature

Wherein the semiconductor component is a semiconductor component.

(5) A process for producing a dicing die-bonding film, comprising the steps of: (1) preparing a semiconductor wafer and the dicing die-bonding film as described in (2) or (3) above by heating the semiconductor wafer at a temperature higher than the glass transition temperature of the adhesive film of the dicing die- fair,

A step of forming a modified region along the line to be divided by irradiating a laser beam inside the semiconductor wafer,

The dicing die bonding film is expanded at a temperature lower than or equal to the glass transition temperature of the adhesive film so that the adhesive film of the semiconductor wafer and the dicing die bonding film is divided

A step of obtaining a semiconductor chip having an adhesive layer

Wherein the semiconductor component is a semiconductor component.

(6) A process for producing a dicing die-bonding film, comprising the steps of: (1) preparing a semiconductor wafer and the dicing die bonding film according to the above (2) or (3) fair,

A step of irradiating the semiconductor wafer with a laser beam to divide the semiconductor wafer along a line to be divided,

A step of dividing the adhesive film of the dicing die-bonding film along the dividing line by expanding the dicing die-bonding film at a temperature lower than the glass transition temperature of the adhesive film or at room temperature, and

A step of obtaining a semiconductor chip having an adhesive layer

Wherein the semiconductor component is a semiconductor component.

(7) A method of manufacturing a semiconductor device, comprising the steps of: attaching a semiconductor wafer and the dicing die bonding film described in (2) or (3); dividing the semiconductor wafer; and dividing the adhesive film by expanding the dicing die bonding film / RTI >

A method for producing a dicing die bonding film, comprising the steps of: bonding a semiconductor wafer and the dicing die bonding film in a state where a semiconductor wafer is heated at a temperature higher than a glass transition temperature of the adhesive film of the dicing die bonding film according to the above (2) or (3)

Wherein the adhesive film is divided by expanding the dicing die-bonding film at a lower temperature or room temperature than the glass transition temperature of the adhesive film of the dicing die-bonding film described in the item (2) or (3).

According to the present invention, even if there is no large-scale cooling device and no defects in the wafer, such as a line dicing method or a stealth dicing method, and a method in which the adhesive layer is not contaminated by cutting chips, So that the semiconductor parts can be processed easily and at a high yield.

These and other features and advantages of the present invention will become more apparent from the following description, with reference to the accompanying drawings, as appropriate.

1 is a cross-sectional view showing an adhesive film according to an embodiment of the present invention.
2 is a plan view of a dicing die-bonding film according to an embodiment of the present invention.
3 is a cross-sectional view of a dicing die-bonding film according to an embodiment of the present invention.
4 is a schematic view for schematically explaining a state in which a semiconductor wafer is stuck on a dicing die bonding film of the present invention.
5 is a schematic view for schematically explaining a dicing step or a modified region forming step of a semiconductor wafer.
6 is a schematic view for schematically explaining an expanding step of the adhesive tape.
7 is a schematic diagram for schematically explaining a pick-up process of a semiconductor chip.

The adhesive film of the present invention is composed of a resin composition containing an epoxy compound in an amount of 9 mass% to 30 mass%, an acrylic copolymer in an amount of 10 mass% to 45 mass%, and an inorganic filler in an amount of 15 mass% (Meth) acrylic acid alkyl ester component as a constituent unit, wherein at least one of the alkylester moieties of at least one component of the alkyl (meth) acrylate component Has a glass transition temperature of 26 占 폚 or more and 60 占 폚 or less in the B-stage state, and the acrylic copolymer and the epoxy compound form a homogeneous phase, and the elongation at break is 3% or less.

In the present invention, the " B-stage state " indicates that the adhesive containing an epoxy compound is in a semi-cured state, and indicates a state in which 80% or more of the calorific value before curing is maintained in the DSC measurement.

Hereinafter, each component of the adhesive film of the present embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to this.

1 is a cross-sectional view showing an adhesive film according to an embodiment of the present invention. As shown in Fig. 1, the adhesive film 1b of the present invention has a structure in which an adhesive layer 11b is laminated on a release film 12b. On the other hand, an adhesive film having a structure in which a release film different from the release film 12b is laminated is provided on the surface of the adhesive film 1b opposite to the surface on which the adhesive layer 11b is formed, It may be good. The adhesive film of the present invention may be cut (pre-cut) into a predetermined shape in advance in accordance with the use process or apparatus.

The adhesive film 1b is attached to the back surface of the semiconductor chip via the adhesive layer 11b when picking up the divided semiconductor chips and is used as an adhesive when fixing the semiconductor chips or the semiconductor chip to the substrate or the lead frame do.

The release film 12b is used for the purpose of improving the handling property of the adhesive layer 11b.

There is no particular limitation on the material of the release film 12b, and examples of the release film 12b include a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethylpentene film, a polyvinyl chloride film, a vinyl chloride copolymer film, a polyethylene terephthalate film, (Meth) acrylic acid copolymer film, an ethylene / (meth) acrylic acid ester copolymer film, a polystyrene film, a polystyrene film, a polyvinylidene fluoride film, a naphthalate film, a polybutylene terephthalate film, , A polycarbonate film, a polyimide film, a fluororesin film, or the like. These crosslinked films are also used. Further, these laminated films may be used.

The surface tension of the release film 12b is preferably 40 mN / m or less, more preferably 35 mN / m or less. The release film 12b having a low surface tension can be obtained by appropriately selecting a material and can also be obtained by applying a silicone resin or the like to the surface of the film and performing a releasing treatment. The film thickness of the release film 12b is usually 5 占 퐉 or more, preferably 10 占 퐉 or more, particularly preferably 20 占 퐉 or more, usually 300 占 퐉 or less, preferably 200 占 퐉 or less, particularly preferably 150 占 퐉 Usually from 5 to 300 μm, preferably from 10 to 200 μm, particularly preferably from 20 to 150 μm.

The adhesive layer (11b) is a resin composition containing an epoxy compound in an amount of 9 mass% or more and 30 mass% or less, an acrylic copolymer in an amount of 10 mass% or more and 45 mass% or less and an inorganic filler in an amount of 15 mass% or more. The resin composition is cured by heat or a high energy ray.

The epoxy compound having an epoxy group contained as the curable resin is not particularly limited and includes, for example, a polyglycidyl ether of a monocyclic polyhydric phenol compound such as hydroquinone, resorcin, pyrocatechol, phloroglucinol Compounds such as dihydroxynaphthalene, biphenol, methylene bisphenol (bisphenol F), methylene bis (o-cresol), ethylidene bisphenol, isopropylidene bisphenol (bisphenol A), isopropylidene bis (4-hydroxyphenyl) butane, 1, 3-bis (4-hydroxyphenyl) benzene, Tetra (4-hydroxyphenyl) ethane, thiobisphenol, sulfobisphenol, oxybisphenol, phenol novolak, orotocresol novolac, ethylphenol novolak, butylphenol novolac, Polynuclear polyhydric phenols such as resorcinol novolak, terpene phenol and the like Polyglycidyl ether compounds of the compounds; Polyglycidyl ethers of polyhydric alcohols such as ethylene glycol, propylene glycol, butylene glycol, hexanediol, polyglycol, thiodiglycol, glycerin, trimethylolpropane, pentaerythritol, sorbitol and bisphenol A-ethylene oxide adduct; Examples of the organic acid include maleic acid, fumaric acid, itaconic acid, succinic acid, glutaric acid, suberic acid, adipic acid, azelaic acid, sebacic acid, dimeric acid, trimeric acid, phthalic acid, isophthalic acid, terephthalic acid, Glycidyl esters of aliphatic, aromatic or alicyclic polybasic acids such as maleic acid, maleic acid, maleic acid, maleic acid, maleic acid, maleic acid, maleic acid, maleic anhydride, ≪ / RTI > An epoxy compound having a glycidyl amino group such as N, N-diglycidyl aniline and bis (4- (N-methyl-N-glycidylamino) phenyl) methane; Vinylcyclohexene diepoxide, dicyclopentanediene diepoxide, 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, 3,4-epoxy-6-methylcyclohexylmethyl-6-methyl Epoxides of cyclic olefin compounds such as cyclohexanecarboxylate and bis (3,4-epoxy-6-methylcyclohexylmethyl) adipate; Epoxidized conjugated diene polymers such as epoxidized polybutadiene and epoxidized styrene-butadiene copolymer, and heterocyclic compounds such as triglycidyl isocyanurate.

As the epoxy compound, a chelate-modified epoxy resin in which a part or the whole thereof is chelate-modified may be used. The chelate-modified epoxy resin may be any one obtained by reacting a chelate component containing a metal oxide and / or a metal hydroxide with an epoxy component having two or more epoxy groups in the molecule. As metal oxides and metal hydroxides, magnesium oxide, calcium oxide, zinc oxide, titanium oxide, cadmium oxide, lead oxide, magnesium hydroxide, calcium hydroxide, phosphoric acid and the like are preferably used.

In the resin composition, the epoxy compound is contained in an amount of 30 mass% or less (preferably 25 mass% or less) of 9 mass% or more (preferably 16 mass% or more). Alternatively, the epoxy compound is contained in an amount of 9 to 30 mass%, preferably 16 to 25 mass%. On the other hand, in the epoxy compound, after the division and pick-up process, the semiconductor component having the adhesive is laminated and then heated to 100 to 300 캜 to cure the adhesive, and the multi- It is necessary to obtain a sieve. The multi-level stacking of the semiconductor parts is a general method used for, for example, increasing the capacity of a semiconductor memory. If the epoxy compound is less than 9% by mass, adhesion reliability is insufficient. If the amount of the epoxy compound exceeds 30 mass%, the pickup becomes difficult and the yield deteriorates. The epoxy compound needs to be in a state in which an unhardened component is sufficiently contained before being applied to a semiconductor wafer, that is, in a B-stage state. The B-stage state can be confirmed by maintaining 80% or more of the calorific value before curing in the DSC measurement.

The acrylic copolymer used in the adhesive film of the present invention comprises at least two kinds of structural units containing at least one (meth) acrylic acid alkyl ester component as a constitutional unit, and at least one of the alkyl (meth) The number of carbon atoms of the alkyl group in the alkyl ester portion of the species component is 3 or less. By using such an acrylic copolymer, compatibility with the epoxy compound and compatibility with a glass transition temperature of the adhesive film in the B-stage state in a specific range can be achieved. When an acrylic homopolymer is used in place of the acrylic copolymer, the crystallinity of the polymer is excessive and the adhesive force of the adhesive film is insufficient.

In the (meth) acrylic acid alkyl ester component in which the alkyl group in the alkyl ester portion has 3 or less carbon atoms, the alkyl group is an unsubstituted alkyl group. The number of carbon atoms in the alkyl group is preferably 2 or less. Examples of such an alkyl group include a methyl group, an ethyl group, an n-propyl group and an iso-propyl group. Of these, a methyl group and an ethyl group are preferable.

Examples of the (meth) acrylic acid alkyl ester component having 3 or less carbon atoms in the alkyl group in the alkyl ester moiety include methyl acrylate, ethyl acrylate, n-propyl methacrylate, iso-propyl methacrylate, methyl acrylate, N-propyl acrylate, and iso-propyl acrylate.

In the acrylic copolymer, the copolymer component other than the (meth) acrylic acid alkyl ester component in which the alkyl group in the alkyl ester portion has 3 or less carbon atoms is not particularly limited, and the alkyl group in the alkyl ester portion may have a carbon number of 4 or more Acrylic acid alkyl ester, acrylonitrile, acrylamide, (meth) acrylic acid, (meth) acrylic acid hydroxyalkyl ester, styrene, and vinyl group.

(Meth) acrylic acid alkyl ester component having an alkyl group of 3 or less in the alkyl ester portion and a (meth) acrylic acid alkyl ester component other than the (meth) acrylic acid alkyl ester component in which the alkyl group in the alkyl ester portion has 3 or less carbon atoms Is preferably not less than 3: 7, more preferably not less than 5: 5, more preferably not more than 9: 1, more preferably not more than 7: 3, more preferably not more than 3: 7 to 9: 1 is preferable, and 5: 5 to 7: 3 is more preferable. If the polymerization ratio of the (meth) acrylic acid alkyl ester component having an alkyl group of 3 or less in the alkyl ester moiety is too low, the acrylic copolymer and the epoxy component tend to become phase separated in the B stage. When the phase separation state is reached, tearing energy is dispersed along the interface between phases, and the breakage path becomes complicated, so that it becomes difficult to divide at room temperature. On the other hand, if the polymerization ratio of the (meth) acrylic acid alkyl ester component having an alkyl group of 3 or less in the alkyl ester moiety is too high, the copolymer becomes excessively rigid, making it difficult to follow the surface of the adherend, Is lacking.

In the resin composition, the content of the acrylic copolymer is preferably 10 mass% or more (preferably 20 or more, more preferably 25 mass% or more), 45 mass% or less (preferably 30 mass% or less, more preferably 27 mass %). Alternatively, the content of the acrylic copolymer is 10 to 45% by mass, preferably 20 to 30% by mass, and more preferably 25 to 27% by mass. When the content of the acrylic copolymer is less than 10% by mass, the cohesive force of the adhesive film is insufficient, causing peeling in the adhesive layer, and it becomes difficult to pick up the adhesive film from the adhesive tape to a predetermined thickness. On the other hand, if the content of the acrylic copolymer exceeds 45% by mass, the adhesive force of the adhesive film is insufficient.

The resin composition used in the present invention contains an inorganic filler in an amount of 15 mass% or more in addition to the epoxy compound and the acrylic copolymer. The content of the inorganic filler is preferably 18 mass% or more, more preferably 20 mass% or more, and is preferably 75 mass% or less, more preferably 50 mass% or less, more preferably 18 to 75 mass% To 50% by mass is more preferable. If the content of the inorganic filler is less than 15 mass%, it becomes more difficult for the cutting line of the adhesive film to proceed straight along the cutting line of the semiconductor chip in the expansion process. If the break line of the adhesive film partially deviates from the break line of the semiconductor chip, a part of the adhesive film is defective at the end portion of the chip, resulting in a decrease in adhesion reliability.

The inorganic filler is not particularly specified, but it is preferable that it has no magnetic property and is thermally stable. Specific examples include silica and alumina.

In the adhesive film of the present invention, the inorganic filler is preferably dispersed as uniformly as possible, and the inorganic filler may be easily dispersed by subjecting the inorganic filler to a surface treatment with a silane coupling agent, a fatty acid, an isocyanate compound or the like.

The resin composition used in the present invention may contain components other than the above-mentioned epoxy compound, acrylic copolymer and inorganic filler. Examples of such other components include a curable resin such as a silicone resin, a phenol resin, a thermosetting polyimide resin, a polyurethane resin, a melamine resin, a urea resin, etc., and mixtures or modified products thereof; a phenol resin (for example, Butylphenol novolak resin, dicyclopentadiene cresol resin, polyparabinylphenol resin, bisphenol A type novolac resin), a thermally activated latent curing agent And a hardening agent such as an epoxy resin, and a hardening agent such as polymethylacrylate, polymethyl acrylate, ethyl polymethacrylate, ethyl polyacrylate, polymethyl methacrylate, polypropyl acrylate, polymethyl methacrylate butyl, poly Homopolymers and mixtures or modified products thereof, curing accelerators such as tertiary amines, imidazoles and quaternary ammonium salts, organic acids and their anhydrides, De, a Lewis acid, a base, a curing agent, molecular sieves (molecular sieve), there may be mentioned triphenyl pingye compound.

The adhesive film of the present invention has a glass transition temperature of 26 캜 to 60 캜, or 26 캜 to 60 캜. In the present invention, the glass transition temperature is preferably 28 DEG C or higher, more preferably 29 DEG C or higher, more preferably 32 DEG C or lower, more preferably 31 DEG C or lower, preferably 28 DEG C to 32 DEG C, To 31 DEG C is more preferable. If the glass transition temperature is lower than 26 占 폚, the viscosity of the adhesive film becomes too low, and it becomes difficult to divide the adhesive film in the process of expanding the adhesive tape of the dicing die bonding film which will be described later. On the other hand, if the glass transition temperature exceeds 60 캜, the viscosity of the adhesive film becomes too high, and it becomes difficult to stick to the semiconductor wafer in the temperature range of 60 캜 to 80 캜, which is the ordinary sticking temperature of the dicing die bonding film. For example, when attempting to heat the dicing die bonding film at a temperature exceeding 80 캜, the pressure-sensitive adhesive tape using a general polyolefin resin as a base material can not withstand the temperature, and the pressure-sensitive adhesive tape is elongated to be wrinkled , Which may cause poor adhesion.

In the present invention, the glass transition temperature of the adhesive film is determined by using an ARES dynamic viscoelasticity measuring apparatus and measuring the temperature under liquid nitrogen at a rate of 5 ° C / min from -30 ° C to + 80 ° C The temperature of the film is raised, the loss tangent (tan?) Is measured at a measurement frequency of 1 Hz, and the temperature indicated by the maximum value of the measured loss tangent value is defined as the glass transition temperature.

Generally, when the adhesive film is periodically subjected to the strain (?), If the adhesive film is a completely elastic body, the stress (?) Corresponding thereto does not occur in a temporal delay but appears in the same phase. However, when a viscous element is present in the adhesive film, there is a delay in response (a phase difference delta of the input of the deformation and a response). The strain (ε) and the stress (σ) with this temporal delay are expressed as the complex elastic modulus (E *) by the following equation (1).

...식(1)

... (1)

The loss tangent tan? Is expressed by the following formula (2).

...식(2)

... (2)

The storage elastic modulus E 'exhibits an elastic property, and the loss elastic modulus E' 'and the loss tangent tanδ are viscous, that is, the loss elastic modulus E' Lt; / RTI >

Thus, the loss tangent (tan?) Expressed by the ratio of the loss elastic modulus (E ") corresponding to viscosity to the storage modulus (E ') corresponding to elasticity (E" / E') reflects the vibration absorbability. The larger the value, the higher the viscosity of the adhesive film (softened) and the higher the vibration absorbing property. On the contrary, the smaller the value, the lower the viscosity (hardness) of the adhesive film and the lower the vibration absorbing property.

In the adhesive film of the present invention, the resin composition comprising the epoxy compound and the acrylic copolymer forms a homogeneous phase in the B-stage (state in which 80% or more of the calorific value before curing is maintained in DSC measurement). The term " homogeneous phase " as used herein refers to a state in which at least 90% of the light of 300 nm is transmitted or a state of having only one loss tangent peak at -30 ° C to 80 ° C. In the case where the epoxy compound and the acrylic copolymer form a phase separation state, that is, in the case of having two or more loss tangent peaks, in the expansion process of the adhesive tape of the dicing die bonding film described later, Since the complex is formed along the interface between the compound phase and the acrylic copolymer, the energy required for the division becomes large, which causes the division failure.

On the other hand, in order to evaluate whether the epoxy compound and the acrylic copolymer form a homogeneous phase, an ARES dynamic viscoelasticity measuring apparatus was used and the temperature was measured under liquid nitrogen at a rate of 5 ° C / min from -30 ° C to + 80 ° C , And the loss tangent (tan?) Is measured at a measurement frequency of 1 Hz.

In the adhesive film of the present invention, the elongation at break is 3% or less. In the present invention, the elongation at break is more preferably 1% or less. In the present specification, the elongation at break of the adhesive film is measured in accordance with JIS K 6251, and a dumbbell for tensile test (JIS K 6251 1 type) is prepared and subjected to a tensile test at a speed of 300 mm / min by a tensile tester And the elongation at break is measured.

As a method of cutting a semiconductor wafer, there is a method of cutting a semiconductor wafer, such as a step of machining a groove to be a folded mark without completely cutting the semiconductor wafer, a step of forming a modified region by irradiating laser light inside the semiconductor wafer on the line along which the object is intended to be cut There is known a method of cutting a semiconductor wafer by performing a step of making it easy to cut and then adding an external force thereto. A method of processing a groove to be a folded mark is called a stepless dicing method for half-cut dicing and a method of forming a modified region by irradiating a laser beam inside a semiconductor wafer on a line along which the object is intended to be cut (for example, 2002-192370, 2003-338467, etc.). These methods have an effect of reducing defects such as chipping when the thickness of the wafer is thin, and it is possible to expect a yield improvement effect since the kerf width is not required. Further, the semiconductor wafer is not completely cut, the surface protection tape is cut by cutting to a predetermined depth along the line to be divided, and the back surface of the semiconductor wafer is ground until it reaches a predetermined depth to cut the semiconductor wafer , A method in which a chip is divided by the so-called " line dicing method ", and then the divided wafer is attached to the dicing die bonding film.

The adhesive film of the present invention is suitably used in such half-cut dicing, stealth dicing and line dicing.

The dicing die-bonding film of the present invention has a constitution in which an adhesive tape and an adhesive film of the present invention are laminated. The adhesive tape is not particularly limited and may have any adhesive strength sufficient to prevent peeling when the semiconductor wafer is diced and may exhibit a low adhesive force so as to easily peel off the adhesive film when picking up the semiconductor chip after dicing. For example, those having a pressure-sensitive adhesive layer formed on a base film can be suitably used. In the dicing die bonding, as shown in Figs. 2 and 3, the adhesive film 1b and the adhesive tape 1a may be laminated on the peeling film 1c. It is also possible to adopt a form in which the film is cut (precut) into a predetermined shape in advance, or a long film in which a plurality of such films are wound in a roll shape.

There is no particular limitation on the base film of the adhesive tape, and a polyolefin resin, a polyester resin, and various other plastics can be molded and used. There is no particular limitation on the thickness of the base film, but it is preferably 50 占 퐉 or more, more preferably 200 占 퐉 or less, and more preferably 50 to 200 占 퐉.

The resin used for the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape is not particularly limited, and a chlorinated polypropylene resin, an acrylic resin, a polyester resin, a polyurethane resin, an epoxy resin and the like which are usually used for a pressure-sensitive adhesive can be used. In the present invention, the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape preferably has an acrylic copolymer content of not less than 80% (preferably not less than 85%, more preferably not less than 90%, more preferably not more than 99%, more preferably not more than 95% (Meth) acrylic acid alkyl ester component is contained as a constitutional unit, and the (meth) acrylic acid alkyl ester The number of carbon atoms in the alkyl group in the alkyl ester portion of the component is preferably 7 or more from the viewpoint of picking up the semiconductor chip.

In the (meth) acrylic acid alkyl ester component having 7 or more carbon atoms in the alkyl group in the alkyl ester moiety, the alkyl group may be either a substituted alkyl group or an unsubstituted alkyl group, and may be any of a straight chain, branched and cyclic alkyl group. The number of carbon atoms of the alkyl group is preferably 8 or more, more preferably 9 or more, and is preferably 18 or less, more preferably 12 or less, more preferably 8 to 18, and even more preferably 9 to 12 carbon atoms. Examples of such an alkyl group include a heptyl group, an iso-octyl group, an isononyl group, a nornonyl group, a lauryl group, an isostearyl group and a nortearyl group. Of these, an isononyl group and a lauryl group are preferable.

Examples of the (meth) acrylic acid alkyl ester component having an alkyl group having 7 or more carbon atoms in the alkyl ester moiety include heptyl acrylate, isooctyl acrylate, octyl methacrylate, isononyl acrylate, n-nonyl acrylate, lauryl acrylate, And stearyl acrylate.

The copolymer component other than the (meth) acrylic acid alkyl ester component having 7 or more carbon atoms in the alkyl group in the alkyl ester portion in the acrylic copolymer is not particularly limited and the alkyl group in the alkyl ester portion may have a carbon number of 6 or less (Meth) acrylic acid alkyl ester component, acrylonitrile, acrylamide, (meth) acrylic acid, (meth) acrylic acid hydroxyalkyl ester, styrene and vinyl groups. Of these, (meth) acrylic acid and (meth) acrylic acid hydroxyalkyl ester are preferable.

(Meth) acrylic acid alkyl ester component having an alkyl group of 7 or more in the alkyl ester portion and a copolymerizable component other than the (meth) acrylic acid alkyl ester component in which the alkyl group in the alkyl ester portion has 7 or more carbon atoms But it is preferably not less than 6: 4, more preferably not less than 7: 3, more preferably not more than 9: 1, more preferably not more than 8: 2, 1, and more preferably 7: 3 to 8: 2. If the polymerization ratio of the (meth) acrylic acid alkyl ester component having an alkyl group of an alkyl group of 7 or more in the alkyl ester portion is too high, it becomes difficult to introduce a reactive group which is a starting point of crosslinking between the polymers, and formation of a stable pressure sensitive adhesive layer becomes difficult. On the other hand, if the polymerization ratio of the (meth) acrylic acid alkyl ester component having 7 or more carbon atoms in the alkyl group in the alkyl ester moiety is too low, pick-up becomes difficult and the yield deteriorates.

It is preferable that a pressure-sensitive adhesive is prepared by appropriately blending a radiation-polymerizable compound, a photopolymerization initiator, a curing agent and the like into the resin composition for a pressure-sensitive adhesive layer.

It is possible to easily peel off the adhesive tape from the adhesive film by blending the radiation-polymerizable compound in the resin composition and irradiating the adhesive tape with radiation. As the radiation polymerizing compound, for example, a low-molecular-weight compound having at least two photopolymerizable carbon-carbon double bonds in molecules capable of forming a three-dimensional network by light irradiation is used. Specific examples thereof include various (meth) acrylic acid ester monomers or oligomers, (meth) acryloyl isocyanates, and vinyl monomers.

When a photopolymerization initiator is used, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, O-xanthone, benzyl dimethyl ketal,? -Hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenyl propane and the like can be used.

To the composition for forming the pressure-sensitive adhesive layer used in the present invention, a modifier such as a tackifier, a pressure-sensitive adhesive adjuster, a surfactant and the like may be added as necessary. The inorganic compound filler may be appropriately added.

The thickness of the pressure-sensitive adhesive layer is not particularly limited and may be appropriately set, but is preferably 5 탆 or more, more preferably 30 탆 or less, and more preferably 5 to 30 탆.

A semiconductor component processing method of the present invention includes a step of bonding a semiconductor wafer and a dicing die bonding film of the present invention, a step of dividing the semiconductor wafer, and a step of dividing the adhesive film by expanding the dicing die bonding film (Preferably 70 deg. C or more, more preferably 80 deg. C or more, preferably 100 deg. C or less, more preferably 90 deg. C or less, and still more preferably 90 deg. C or less) than the glass transition temperature of the adhesive film of the dicing die- Bonding the semiconductor wafer and the dicing die bonding film while heating the semiconductor wafer at a temperature of 70 to 100 DEG C, preferably 80 to 90 DEG C, (Preferably 10 占 폚 or higher, more preferably 20 占 폚 or higher, preferably 40 占 폚 or lower, more preferably lower than or equal to 40 占 폚) than the glass transition temperature of the adhesive film of the film Is 30 DEG C or lower, preferably 10 DEG C to 40 DEG C, and more preferably 20 DEG C to 30 DEG C, but it is not necessary to have a special temperature control in a normal environmental environment in which a person operates, And dividing the adhesive film by expanding the adhesive film.

The semiconductor part processing method of the present invention will be described based on preferred embodiments. However, the present invention is not limited to this.

The dicing die-bonding film of the present invention can be suitably used in the above-mentioned line dicing method. Specifically, in one embodiment of the semiconductor part processing method of the present invention, a step of cutting the surface of a semiconductor wafer to a predetermined depth along a line to be divided and putting a surface protection tape on the back surface of the semiconductor wafer, A step of dividing the divided semiconductor wafer and the dicing die bonding film of the present invention by grinding until the predetermined depth of cut is reached; A process of attaching the dicing die-bonding film at a temperature lower than the glass transition temperature of the adhesive film or at room temperature, a step of dividing the adhesive film of the dicing die-bonding film along the dividing line, And a step of obtaining a semiconductor chip having a layer have.

Other preferred embodiments of the semiconductor part processing method of the present invention will be described with reference to Figs. However, the present invention is not limited to this.

4 is a schematic view for schematically explaining how a semiconductor wafer is stuck on a dicing die bonding film of the present invention.

In Fig. 4, the semiconductor wafer 2 and the ring frame 3 are joined to the dicing die bonding film 1. 4, the adhesive tape 1a of the dicing die bonding film 1 is fitted to the ring frame 3, and the semiconductor wafer 2 is bonded to the adhesive film 1 of the dicing die bonding film 1, (1b). The adhesive tape 1a and the ring frame 3 may be brought into contact with each other after the semiconductor wafer 2 is bonded to the adhesive film 1b. The adhesion of the adhesive tape 1a to the ring frame 3 and the bonding of the semiconductor wafer 2 and the adhesive film 1b may be performed at the same time.

4, when the semiconductor wafer 2 and the dicing die bonding film 1 of the present invention are stitched to each other, the glass transition temperature of the adhesive film 1b of the dicing die bonding film 1 (Preferably 70 ° C or more, more preferably 80 ° C or more, preferably 100 ° C or less, more preferably 90 ° C or less, preferably 70 to 100 ° C, and more preferably 80 to 90 ° C) The semiconductor wafer 2 is preferably heated.

5 is a schematic view for schematically explaining a dicing step or a modified region forming step of a semiconductor wafer.

The laser beam 10 is irradiated to the line to be divided of the semiconductor wafer 2 to which the dicing die bonding film 1 is bonded so that the semiconductor wafer 2 is singulated, (11). On the other hand, instead of irradiating the laser light 10, a semiconductor chip may be disassembled by using a dicing blade or the like.

Alternatively, the modified region may be formed by irradiating the laser beam 10 to the line to be divided of the semiconductor wafer 2 to which the dicing die bonding film 1 is bonded.

6 is a schematic view for schematically explaining an expanding step of the adhesive tape.

The adhesive tape 1a holding the semiconductor wafer 10 and the adhesive film 1b on which the diced semiconductor chip 11 or the modified region is formed is wound around the ring frame 3 in the circumferential direction (Preferably 10 ° C or more, more preferably 20 ° C or more, preferably 40 ° C or less, more preferably 30 ° C or less, preferably, 10 ° C to 40 ° C, and more preferably 20 ° C to 30 ° C, but it is not necessary to have special temperature control in a normal environment where human activity is performed). Specifically, the adhesive tape 1a is held on the semiconductor wafer 10 holding the diced semiconductor chips 11 or the modified areas and the adhesive tape 1b in a state of holding the adhesive film 1b. The member 4 to be pushed up from the bottom side is raised and the adhesive tape 1a is elongated in the circumferential direction of the ring frame 3. [ In the case where the modified region is formed, the semiconductor wafer is unified along the dividing line by the expanding process, and the semiconductor chip 11 is obtained. The adhesive film 1b is divided along the split lines by the expansion process and the semiconductor chips 11 are widened in the circumferential direction of the ring frame 3 at regular intervals, It is possible to improve the recognizability of the semiconductor chip 11 and to prevent re-adhesion of the kinds of semiconductor chips which are caused by contact between the adjacent semiconductor chips 11 at the time of pick-up.

7 is a schematic diagram for schematically explaining a pick-up process of a semiconductor chip.

After the expansion process is performed, as shown in Fig. 7, a pick-up process for picking up the semiconductor chip 11 is performed while the adhesive tape 1a is extended. More specifically, the semiconductor chip 11 is pushed up from the lower surface side of the adhesive tape 1a by the pins 5 that push up from below, and the semiconductor chips 11 are transferred from the upper surface side of the adhesive tape 1a to the adsorption collet 6, (11) is picked up by picking up the semiconductor chip (11) with the adhesive film (1b).

As described above, the die bonding process can be performed using the semiconductor chip 11 obtained by the method of the present invention. Specifically, the semiconductor chip 11 can be adhered to another semiconductor component, a lead frame, or a package substrate by the adhesive film 1b picked up together with the semiconductor chip 11 by a pickup process.

Example

Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited thereto.

(1) Preparation of adhesive film

<Adhesive film 1>

45 mass% of a copolymer of ethyl acrylate, butyl acrylate and styrene (polymerization ratio: ethyl acrylate / butyl acrylate / styrene = 3/1/6, weight average molecular weight: 100,000), bisphenol F type epoxy (trade name RE303, , 18 mass% of a phenol novolak resin (trade name: HF-1, manufactured by Meiwa Kasei Co., Ltd.), 16 mass% of a phenol novolac resin (trade name, manufactured by Nippon Kayaku Co., A slurry 1 obtained by dispersing 20% by mass of a silica filler (trade name: C1, manufactured by ADOMATECHS) in a mixed solvent of methyl ethyl ketone / toluene was kneaded, and a PET film And dried at 120 캜 for 3 minutes to obtain an adhesive film 1 having a thickness of 10 탆 and a B-stage state as an adhesive layer.

<Adhesive film 2>

A copolymer of propyl methacrylate, acrylonitrile and glycidyl methacrylate (polymerization ratio: propyl methacrylate / acrylonitrile / glycidyl methacrylate = 3.5 / 6 / 0.5, weight average molecular weight: 400,000) , 26 mass% of bisphenol A epoxy resin (trade name: RE-310, manufactured by Nippon Kayaku), 25 mass% of phenol novolak resin (trade name: HF- 2% PZ, manufactured by Shikoku Kasei Co., Ltd.) and 20% by mass of a silica filler (trade name: C1, manufactured by Adomatec Co., Ltd.) in a mixed solvent of methyl ethyl ketone / toluene were kneaded, And dried at 120 캜 for 3 minutes to obtain an adhesive film 2 having a thickness of 10 탆 and a B-stage state as an adhesive layer.

<Adhesive Film 3>

45 mass% of a copolymer of methyl acrylate, styrene and methacrylic acid (polymerization ratio: methyl acrylate / styrene / methacrylic acid = 3.5 / 6 / 0.5, weight average molecular weight: 400,000), bisphenol A type epoxy (Trade name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.) in an amount of 19% by mass, a phenol novolak resin (trade name: HF-1, manufactured by Meiwa- A slurry 3 obtained by dispersing 15 mass% of a filler (trade name: C1, manufactured by Adomatec Co., Ltd.) in a mixed solvent of methyl ethyl ketone / toluene was kneaded and applied onto a PET film which had been subjected to release treatment and dried at 120 DEG C for 3 minutes, To obtain an adhesive film 3 having a thickness of 10 mu m and a B-stage state as an adhesive layer.

<Adhesive film 4>

10% by mass of a copolymer of methyl acrylate, styrene and methacrylic acid (polymerization ratio: methyl acrylate / styrene / methacrylic acid = 6.5 / 3 / 0.5, weight average molecular weight: 400,000), bisphenol A type epoxy (Trade name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.) in an amount of 19% by mass, a phenol novolak resin (trade name: HF-1, manufactured by Meiwa- Slurry 4 obtained by dispersing 50% by mass of a filler (trade name: C1, manufactured by Adomatec) in a mixed solvent of methyl ethyl ketone / toluene was kneaded, coated on a PET film subjected to release treatment, and dried at 120 ° C for 3 minutes, To obtain an adhesive film 4 having a thickness of 10 mu m and a B-stage state as an adhesive layer.

<Adhesive film 5>

10 mass% of a copolymer of ethyl acrylate, butyl acrylate and styrene (polymerization ratio: ethyl acrylate / butyl acrylate / styrene = 3/1/6, weight average molecular weight: 100,000), bisphenol A type epoxy 10% by mass of phenol novolac resin (trade name: HF-1, manufactured by Meiwa Pharmaceutical Co., Ltd.), 1% by mass of phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., A slurry 5 obtained by dispersing 70% by mass of a filler (trade name: C1, manufactured by Adomatec Co., Ltd.) in a mixed solvent of methyl ethyl ketone / toluene was kneaded and coated on a PET film subjected to release treatment and dried at 120 ° C for 3 minutes, Thereby obtaining an adhesive film 5 having a thickness of 10 mu m and a B-stage state as an adhesive layer.

<Adhesive film 6>

21 mass% of a copolymer of ethyl acrylate, butyl acrylate and styrene (polymerization ratio: ethyl acrylate / butyl acrylate / styrene = 3/1/6, weight average molecular weight: 100,000), biphenyl aralkyl type epoxy 30% by mass of phenol novolak resin (trade name: HF-1, manufactured by Meiwa Pharmaceutical Co., Ltd.), 1% by mass of phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.) Slurry 6 obtained by dispersing 18 mass% of silica filler (trade name: C1, manufactured by Adomatec) in a mixed solvent of methyl ethyl ketone / toluene was kneaded, coated on a PET film subjected to mold release treatment, and dried at 120 DEG C for 3 minutes , The adhesive layer 6 having a thickness of 10 mu m and in the B-stage state was obtained.

<Adhesive film 7>

60 mass% of a copolymer of butyl acrylate, acrylonitrile and methacrylic acid (polymerization ratio: butyl acrylate / acrylonitrile / methacrylic acid = 4 / 5.5 / 0.5, weight average molecular weight: 400,000) , 10 mass% of phenol novolak resin (trade name: HF-1, manufactured by Meiwa Waysei Co., Ltd.), 9 mass% of epoxy (trade name: NC-3000 manufactured by Nippon Kayaku Co., 1% by mass of a silica filler and 20% by mass of a silica filler (trade name: C1, manufactured by Adomatec Co., Ltd.) in a mixed solvent of methyl ethyl ketone / toluene was kneaded and coated on the PET film subjected to the release treatment, And dried for 3 minutes to obtain an adhesive film 7 having a thickness of 10 mu m and a B-stage state as an adhesive layer.

<Adhesive film 8>

A copolymer of propyl methacrylate, acrylonitrile and glycidyl methacrylate (polymerization ratio: propyl methacrylate / acrylonitrile / glycidyl methacrylate = 3.5 / 6 / 0.5, weight average molecular weight: 400,000) , 15 mass% of phenol novolak resin (trade name: HF-1, manufactured by Meiwa Wakasa Seisakusho), 50 mass% of bisphenol A epoxy resin (trade name: RE-310, manufactured by Nippon Kayaku Co., 2 PZ, manufactured by Shikoku Chemicals) and 20 mass% of a silica filler (trade name: C1, manufactured by Adomatec Co., Ltd.) in a mixed solvent of methyl ethyl ketone / toluene were kneaded, And dried at 120 占 폚 for 3 minutes to obtain an adhesive film 8 having a thickness of 10 占 퐉 and a B-stage state as an adhesive layer.

<Adhesive film 9>

A copolymer of stearyl acrylate and 2-hydroxyethyl acrylate and methacrylic acid (polymerization ratio: stearyl acrylcrylate / 2-hydroxyethyl acrylate / methacrylic acid = 9 / 0.5 / 0.5, , 26 mass% of bisphenol A epoxy (trade name: RE-310, manufactured by Nippon Kayaku Co., Ltd.), 27 mass% of phenol novolak resin (trade name: HF- And 1 mass% of a silica filler (trade name: 2 PZ, manufactured by Shikoku Chemicals) and 20 mass% of a silica filler (trade name: C1, manufactured by Adomatec Co., Ltd.) in a mixed solvent of methyl ethyl ketone and toluene was kneaded and subjected to mold release treatment Coated on a PET film and dried at 120 캜 for 3 minutes to obtain an adhesive film 9 having a thickness of 10 탆 and a B-stage state as an adhesive layer.

<Adhesive film 10>

A copolymer of stearyl acrylate and 2-hydroxyethyl acrylate and methacrylic acid (polymerization ratio: stearyl acrylcrylate / 2-hydroxyethyl acrylate / methacrylic acid = 9 / 0.5 / 0.5, : 18 mass% of phenol novolak resin (trade name: HF-1, manufactured by Meiwakase Co., Ltd.), 45 mass% of bisphenol A epoxy resin (trade name: RE-310, manufactured by Nippon Kayaku Co., And 1 mass% of a silica filler (trade name: 2 PZ, manufactured by Shikoku Chemicals) and 20 mass% of a silica filler (trade name: C1, manufactured by Adomatec Co., Ltd.) in a mixed solvent of methyl ethyl ketone and toluene was kneaded and kneaded Coated on a PET film and dried at 120 캜 for 3 minutes to obtain an adhesive film 10 having a thickness of 10 탆 and a B-stage state as an adhesive layer.

<Adhesive film 11>

44 mass% of a copolymer of methyl acrylate, styrene and methacrylic acid (polymerization ratio: methyl acrylate / styrene / methacrylic acid = 6.5 / 3 / 0.5, weight average molecular weight: 100,000), bisphenol A type epoxy (Trade name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.) in an amount of 23% by mass and a silica (trade name, manufactured by Nippon Kayaku Co., Ltd.) of 22% by mass, phenol novolac resin Slurry 11 obtained by dispersing 10% by mass of a filler (trade name: C1, manufactured by Adomatec Co., Ltd.) in a mixed solvent of methyl ethyl ketone / toluene was kneaded and coated on a PET film subjected to release treatment and dried at 120 ° C for 3 minutes, The adhesive film 11 in the B-stage state was obtained with a thickness of the adhesive layer of 10 mu m.

<Adhesive film 12>

45 mass% of a copolymer of methyl acrylate, styrene and methacrylic acid (polymerization ratio: methyl acrylate / styrene / methacrylic acid = 6.5 / 3 / 0.5, weight average molecular weight: 100,000), biphenyl aralkyl type epoxy 20% by mass of phenol novolak resin (trade name: HF-1, manufactured by Meiwa Waxei Co., Ltd.), 1% by mass of phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., A slurry 12 obtained by dispersing a mixture of silica filler (trade name: C1, manufactured by Adomatec Co., Ltd.) in a methyl ethyl ketone / toluene mixed solvent was kneaded and coated on a PET film subjected to release treatment, And dried to obtain an adhesive film 12 in a B-stage state with an adhesive layer having a thickness of 10 mu m.

<Adhesive film 13>

5 mass% of a copolymer of methyl acrylate and styrene (polymerization ratio: methyl acrylate / styrene /=6.5/3.5, weight average molecular weight: 100,000), bisphenol A epoxy (trade name: RE-310, manufactured by Nippon Kayaku Co., Ltd.) 21 (Trade name: HF-1, manufactured by Meiwa Pharmaceutical Co., Ltd.), 23 mass%, phenylimidazole (trade name: 2 PZ, manufactured by Shikoku Chemicals) and 1 mass% Manufactured by Nippon Kayaku Co., Ltd.) was dispersed in a mixed solvent of methyl ethyl ketone / toluene was kneaded and coated on the PET film which had been subjected to the releasing treatment and dried at 120 ° C for 3 minutes to form an adhesive layer having a thickness of 10 μm , Thereby obtaining the adhesive film 13 in the B-stage state.

<Adhesive Film 14>

13 mass% of a copolymer of ethyl acrylate, butyl acrylate and styrene (polymerization ratio: ethyl acrylate / butyl acrylate / styrene = 3/1/6, weight average molecular weight: 100,000), bisphenol A type epoxy 8% by mass of phenol novolak resin (trade name: HF-1, manufactured by Meiwa Pharmaceutical Co., Ltd.), 1% by mass of phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., A slurry 14 obtained by dispersing 70% by mass of a filler (trade name: C1, manufactured by Adomatec Co., Ltd.) in a mixed solvent of methyl ethyl ketone / toluene was kneaded and coated on the PET film subjected to the release treatment and dried at 120 ° C for 3 minutes, The adhesive film 14 in the B-stage state was obtained with a thickness of the adhesive layer of 10 mu m.

<Adhesive film 15>

10 mass% of a copolymer of ethyl acrylate, butyl acrylate and styrene (polymerization ratio: ethyl acrylate / butyl acrylate / styrene = 3/1/6, weight average molecular weight: 100,000), biphenyl aralkyl type epoxy 33% by mass of phenol novolak resin (trade name: HF-1, manufactured by Meiwa Pharmaceutical Co., Ltd.), 1% by mass of phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., A slurry 15 obtained by dispersing 23 mass% of silica filler (trade name: C1, manufactured by Adomatec Co., Ltd.) in a mixed solvent of methyl ethyl ketone / toluene was kneaded, coated on a PET film subjected to release treatment, and dried at 120 ° C for 3 minutes , And the adhesive film 15 in the B-stage state was obtained with a thickness of the adhesive layer of 10 mu m.

(2) Measurement of glass transition temperature and confirmation of compatibility of acrylic copolymer / epoxy compound

Each of the adhesive films 1 to 15 was laminated so that the adhesive layers each had a thickness of 2 mm and the temperature was measured at a temperature raising rate of 5 캜 / min under liquid nitrogen using a dynamic viscoelasticity measuring apparatus (trade name: ARES, TA Instruments) The temperature was raised from -30 ° C to + 80 ° C, and the loss tangent (tan?) Was measured at a measurement frequency of 1 Hz.

The temperature at which the maximum value of the measured loss tangent value appears is taken as the glass transition temperature.

In addition, when the maximum value of the measured loss tangent is 1, it is evaluated that the acrylic copolymer and the epoxy compound form a homogeneous phase. When the measured loss tangent value is 2 or more, the acrylic copolymer and the epoxy compound It is said that it is in the state of separation.

The results are shown in Table 1.

(3) Measurement of elongation at break

A dumbbell for tensile test (JIS K 6251 1 type) was prepared for each of the adhesive films 1 to 15 and was subjected to a tensile test at a speed of 300 mm / min by a tensile tester (trade name: Strogrover V, manufactured by Toyo Seiki) The test was carried out to determine the elongation at break. The results are shown in Table 1.

(4) Measurement of adhesive force

A sample obtained by adhering a 4 × 4 mm silicon chip to a copper lead frame with 4 × 4 mm adhesive films 1 to 15 was used and the shear adhesive force after heating at 350 ° C. for 20 seconds was measured using a push pull gauge . The results are shown in Table 1.

[Table 1]

(5) Preparation of adhesive tape

<Base film>

Resin beads of an ethylene-methacrylic acid copolymer (trade name: UltraSens AN4214, manufactured by Mitsui DuPont Polychemical Co., Ltd.) were melted at 140 占 폚 and molded into an elongated film having a thickness of 100 占 퐉 by using an extruder, did.

<Adhesive tape 1>

(100 parts by mass) of a copolymer of heptyl acrylate and 2-hydroxyethyl acrylate (polymerization ratio: heptyl acrylate / 2-hydroxyethyl acrylate = 9/1, weight average molecular weight: 400,000) : Coronate T, manufactured by Nippon Polyurethane Co., Ltd.) was dispersed in ethyl acetate to a solid content of 30% by weight, and then laminated on the base film so as to have a thickness after heat drying of 10 탆 , And dried by heating at 77 캜 for 2 minutes to obtain an adhesive tape 1.

<Adhesive tape 2>

A copolymer of hexyl methacrylate and 2-hydroxyethyl acrylate (polymerization ratio: heptyl acrylate / 2-hydroxyethyl acrylate = 8/2 (meth) acrylate was used in place of the copolymer of heptyl acrylate and 2-hydroxyethyl acrylate , Weight average molecular weight: 500,000) was used as the pressure-sensitive adhesive tape 1.

<Adhesive tape 3>

, 100 parts by mass of a copolymer of hexyl methacrylate and 2-hydroxyethyl acrylate (polymerization ratio: hexyl methacrylate / 2-hydroxyethyl acrylate = 8/2, weight average molecular weight: 500,000) 20 parts by mass of trimethylolpropane triacrylate (trade name: V295, Osaka Organic Chemical Co., Ltd.) as a cured product, 2 parts by mass of TDI polyisocyanate (trade name: Colonate T, manufactured by Nippon Polyurethane Industry Co., Ltd.) 1 part by mass of Irgacure 184 (trade name, manufactured by Nihon Chiba-Geigy) as a photopolymerization initiator was dispersed in ethyl acetate to a solid content of 30% by weight, and then laminated on a substrate film , An adhesive tape 3 was obtained in the same manner as the adhesive tape 1.

<Adhesive tape 4>

A copolymer of isooctyl acrylate and 2-hydroxyethyl acrylate (polymerization ratio: isooctyl acrylate / 2-hydroxyethyl acrylate = 6/4 (weight ratio)) was used instead of the copolymer of heptyl acrylate and 2-hydroxyethyl acrylate , Weight average molecular weight: 600,000) was used as the pressure-sensitive adhesive tape 1.

[Table 2]

(6) Preparation of dicing die-bonding film

<Dicing die-bonding film 1>

The adhesive film 1 and the adhesive tape 1 were cut into a circular shape having a diameter of 220 mm and 270 mm respectively and the adhesive layer of the adhesive film 1 and the pressure sensitive adhesive layer of the adhesive tape 1 were stuck together to form a release film (Product name: SP-PET, manufactured by Tohcello) to form a dicing die-bonding film 1 having a shape shown in Figs.

<Dicing die-bonding film 2>

The dicing die bonding film 2 was formed in the same manner as in the dicing die bonding film 1 except that the adhesive film 2 and the adhesive tape 2 were used.

<Dicing die-bonding film 3>

The dicing die bonding film 3 was formed in the same manner as in the dicing die bonding film 1 except that the adhesive film 2 and the adhesive tape 3 were used.

<Dicing die-bonding film 4>

The dicing die bonding film 4 was formed in the same manner as the dicing die bonding film 1 except that the adhesive film 2 and the adhesive tape 1 were used.

<Dicing die-bonding film 5>

The dicing die bonding film 5 was formed in the same manner as the dicing die bonding film 1 except that the adhesive film 2 and the adhesive tape 4 were used.

<Dicing die-bonding film 6>

The dicing die bonding film 6 was formed in the same manner as in the dicing die bonding film 1 except that the adhesive film 3 and the adhesive tape 4 were used.

<Dicing die bonding film 7>

The dicing die bonding film 7 was formed in the same manner as in the dicing die bonding film 1 except that the adhesive film 4 and the adhesive tape 1 were used.

<Dicing die-bonding film 8>

The dicing die bonding film 8 was formed in the same manner as the dicing die bonding film 1 except that the adhesive film 5 and the adhesive tape 1 were used.

<Dicing die bonding film 9>

A dicing die bonding film 9 was formed in the same manner as in the dicing die bonding film 1 except that the adhesive film 6 and the adhesive tape 1 were used.

<Dicing die bonding film 11>

The dicing die bonding film 11 was formed in the same manner as the dicing die bonding film 1 except that the adhesive film 7 and the adhesive tape 1 were used.

<Dicing die bonding film 12>

The dicing die bonding film 12 was formed in the same manner as the dicing die bonding film 1 except that the adhesive film 8 and the adhesive tape 1 were used.

<Dicing die bonding film 13>

The dicing die bonding film 13 was formed in the same manner as in the dicing die bonding film 1 except that the adhesive film 9 and the adhesive tape 1 were used.

<Dicing die bonding film 14>

The dicing die bonding film 14 was formed in the same manner as in the dicing die bonding film 1 except that the adhesive film 10 and the adhesive tape 1 were used.

<Dicing die bonding film 15>

The dicing die bonding film 15 was formed in the same manner as the dicing die bonding film 1 except that the adhesive film 11 and the adhesive tape 1 were used.

<Dicing die bonding film 16>

The dicing die bonding film 16 was formed in the same manner as in the dicing die bonding film 1 except that the adhesive film 12 and the adhesive tape 4 were used.

<Dicing die bonding film 17>

The dicing die bonding film 17 was formed in the same manner as the dicing die bonding film 1 except that the adhesive film 13 and the adhesive tape 1 were used.

&Lt; Dicing die bonding film 18 &gt;

The dicing die bonding film 18 was formed in the same manner as the dicing die bonding film 1 except that the adhesive film 14 and the adhesive tape 1 were used.

<Dicing die bonding film 19>

The dicing die bonding film 19 was formed in the same manner as the dicing die bonding film 1 except that the adhesive film 15 and the adhesive tape 1 were used.

(7) Processing of semiconductor wafers and fabrication of semiconductor chips

Each of the following steps was carried out, and the dicing die-bonding film was used to process a semiconductor wafer to produce a semiconductor chip.

(a) A process of attaching a surface protective tape (trade name: SP-594, manufactured by Furukawa Electric Co., Ltd.) to the surface of a semiconductor wafer (thickness: 50 탆, diameter:

(b) back grinding process for grinding the back surface of the semiconductor wafer

(c) The PET film and the peeling film of the adhesive film are peeled from the dicing die bonding film, and as shown in Fig. 4, the semiconductor wafer is heated at 80 DEG C, The adhesive tape of the dicing die bonding film and the ring frame (trade name: MDTFR, manufactured by DISCO) for processing a semiconductor wafer were passed through the pressure-sensitive adhesive layer at a portion where the adhesive film of the adhesive film was not overlapped with the adhesive layer A process that sticks

(d) peeling the surface protective tape from the surface of the semiconductor wafer

(e) As shown in Fig. 5, a step of irradiating a laser beam to the line to be divided 2a of the semiconductor wafer and forming a modified region by multiphoton absorption in the semiconductor wafer

(f) As shown in Fig. 6, the dicing die-bonding film is stretched at an extension amount (A in Fig. 6) of 5 to 10 mm by using an extension member at room temperature The semiconductor wafer and the adhesive film were divided along the line to be divided, and a plurality of semiconductor chips (size: 10 mm x 10 mm x 50 m)

(g) As shown in Fig. 7, while the expanded state of the dicing die-bonding film is maintained, the adhesive film 11 is attached to the adsorption collet 6 while being pushed up to the fins 5 from the adhesive tape surface A step of picking up the semiconductor chip 6

(8) Heating and stitching

While the semiconductor wafer was heated to 80 占 폚 using a sticking device (trade name: free cut tape mounter, Omiya Kogyo Co., Ltd.), the dicing die bonding film was applied to the semiconductor wafer and the working ring frame at a speed of 10 mm / s. After the heating and bonding, the side to which the semiconductor wafer was bonded was downwardly observed with naked eyes from the back side of the substrate film of the dicing die bonding film. A partial peeling occurred between the semiconductor wafer and the dicing die bonding to make it impossible to attach a sample in which the state of intrusion of air was confirmed and a sample in which such an air intrusion was not visually confirmed succeeded.

The results are shown in Tables 3 and 4.

(9) Segmentation test of semiconductor wafers

The periphery of each chip of the sample after expansion was observed with an extension amount of 5 mm, 7 mm, or 10 mm using a CCD camera, and cracks on the adhesive film by division were successively split Chip. It is preferable that the chips on the adhesive film by division other than the successful chip are discontinuous (that is, partially adhered to the adhesive film) on any or all of the four sides of the chip, And the cracks on the adhesive film due to the division were not observed at all.

The test was performed three times for each sample at room temperature (25 DEG C), and the success rate of the split was calculated.

(Average split success rate) (%) =

(Number of chips succeeded) / (number of chips on the dicing die-bonding film) x 100

The results are shown in Tables 3 and 4.

(10) Pickup success rate

In the step (g), in the case where the semiconductor chip and the adhesive film are peeled off from the adhesive tape, the semiconductor chip is not broken, the adjacent chips are not bonded together, and the adhesive film having a thickness of 10 占 퐉 占 1 占 퐉 is attached The rate at which the semiconductor chips can be picked up was evaluated as the pickup success rate.

Number of trials: 100 chips

The results are shown in Tables 3 and 4.

(11) Microscopic observation of the semiconductor chip An optical microscope was used to observe the surface on which the adhesive films of the picked-up semiconductor chips (ten samples each) were laminated. On the observation surface, a chip in which a portion not covered with an adhesive film was seen on a semiconductor chip was regarded as an adhesive film defect chip, and a chip in which such a defect was not seen was regarded as a successful chip.

The results are shown in Tables 3 and 4.

[Table 3]

[Table 4]

When the adhesive film of the present invention is used as a processing method of a semiconductor wafer, it is easy to be torn in the planar direction while having a sufficient cohesive force only that no peeling occurs in the adhesive layer even if it is expanded at room temperature, The adhesive strength was also sufficient to ensure reliability. Therefore, as can be seen from the above results, by using the dicing die bonding film of the present invention, it is possible to efficiently obtain a semiconductor chip with an adhesive film having a constant thickness without performing a cooling step, .

On the other hand, when the dicing die bonding films 11 to 14 of the comparative example were used, the adhesive layer of the adhesive film could not be divided by expansion at room temperature. In the case of using the dicing die bonding film 15 of the comparative example, it is possible to divide the adhesive layer of the adhesive film by expanding at room temperature, but the adhesive film having a constant thickness could not be applied to the semiconductor chip. In the case of using the dicing die bonding film 16 of the comparative example, the dicing die bonding film and the semiconductor wafer can not be brought into contact with each other at 80 DEG C, and it is necessary to stick the semiconductor wafer at a higher temperature. Further, in the case of using the dicing die bonding film 17 of the comparative example, it is possible to divide the adhesive layer of the adhesive film by performing expansion at room temperature, but the discrete semiconductor chips could not be picked up. In the case of using the dicing die bonding film 18 of the comparative example, it was possible to divide the adhesive layer of the adhesive film and to pick up the separated semiconductor chips by expanding at room temperature, but the adhesive force of the adhesive film was very small, Adhesion reliability could not be ensured. Further, in the case of using the dicing die bonding film 19 of the comparative example, it was possible to divide the adhesive layer of the adhesive film by performing expansion at room temperature, but the yield of the step of picking up the separated semiconductor chips was very poor.

While the invention has been described in conjunction with the embodiments thereof, it is to be understood that the invention is not limited to any details of the description thereof except as otherwise specifically indicated and is not to be construed as limited to the spirit and scope of the invention as set forth in the appended claims. I think it is natural to be.

The present application claims priority based on Japanese Patent Application No. 2011-147778, filed on July 1, 2011, which is hereby incorporated by reference as if fully set forth herein.

1: Dicing die bonding film
1a: Adhesive tape
1b: Adhesive film
11b: adhesive layer
12b: peeling film
1c: peeling film
2: Semiconductor wafer
2a: Line to be divided
2b: completion of formation of modified region line to be divided
3: ring frame
4: Pressure member
5: Pin pushing from below
6: Adsorption collet
10: laser light
11: Semiconductor chip
A: Extension amount

Claims (7)

An epoxy compound in an amount of 9 mass% or more and 30 mass% or less, an acrylic copolymer in an amount of 10 mass% or more and 45 mass% or less, and an inorganic filler in an amount of 15 mass% or more and 75 mass%
Wherein the acrylic copolymer comprises at least two kinds of structural units containing at least one (meth) acrylic acid alkyl ester component as a structural unit,
The number of carbon atoms of the alkyl group in the alkyl ester portion of at least one component of the alkyl (meth) acrylate component is 3 or less,
Wherein the glass transition temperature is 26 占 폚 or higher and 60 占 폚 or lower in the B stage state and the acrylic copolymer and the epoxy compound form a homogeneous phase and the elongation at break is 3%
Adhesive film. A dicing die bonding film laminated with an adhesive tape and the adhesive film according to claim 1. 3. The method of claim 2,
Wherein the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape is formed of a resin composition containing 80% by mass or more of an acrylic copolymer, and the acrylic copolymer contains a (meth) acrylic acid alkyl ester component as a constituent unit and the (meth) Wherein the number of carbon atoms of the alkyl group in the alkyl ester moiety is 7 or more. A step of cutting the surface of the semiconductor wafer to a predetermined depth along the line to be divided and putting the surface protective tape on,
A step of dividing a back surface of the semiconductor wafer by grinding until reaching a predetermined depth cut by the above process,
A step of bonding the divided semiconductor wafer and the dicing die bonding film according to claim 2 or 3 to the dicing die bonding film while heating the semiconductor wafer at a temperature higher than the glass transition temperature of the adhesive film of the dicing die bonding film ,
A step of dividing the adhesive film of the dicing die-bonding film along the dividing line by expanding the dicing die-bonding film at a temperature lower than the glass transition temperature of the adhesive film or at room temperature, and
A step of obtaining a semiconductor chip having an adhesive layer
Wherein the semiconductor component is a semiconductor component. A method for manufacturing a semiconductor device, comprising the steps of: applying a semiconductor wafer and the dicing die bonding film according to claim 2 or 3 to a die bonding die at a higher temperature than the glass transition temperature of the die bonding die bonding film;
A step of forming a modified region along the line to be divided by irradiating a laser beam inside the semiconductor wafer,
A step of dividing the adhesive film of the semiconductor wafer and the dicing die bonding film by a dividing step along a line to be divided, and a step of dividing the adhesive film of the dicing die bonding film at a temperature lower than the glass transition temperature of the adhesive film or at room temperature,
A step of obtaining a semiconductor chip having an adhesive layer
Wherein the semiconductor component is a semiconductor component. A method for manufacturing a semiconductor device, comprising the steps of: applying a semiconductor wafer and the dicing die bonding film according to claim 2 or 3 to a die bonding die at a higher temperature than the glass transition temperature of the die bonding die bonding film;
A step of irradiating the semiconductor wafer with a laser beam to divide the semiconductor wafer along a line to be divided,
A step of dividing the dicing die-bonding film of the dicing die-bonding film along a dividing line by expanding the dicing die-bonding film at a temperature lower than or equal to the glass transition temperature of the adhesive film; and
A step of obtaining a semiconductor chip having an adhesive layer
Wherein the semiconductor component is a semiconductor component. A method of manufacturing a semiconductor device, comprising the steps of: attaching a semiconductor wafer and the dicing die bonding film of claim 2 or 3; dividing the semiconductor wafer; and dividing the adhesive film by expanding the dicing die bonding film,
A method for manufacturing a dicing die bonding film, comprising the steps of: bonding the semiconductor wafer and the dicing die bonding film in a state where the semiconductor wafer is heated at a temperature higher than the glass transition temperature of the adhesive film of the dicing die bonding film according to claim 2 or 3;
The dicing die-bonding film according to claim 2 or 3, wherein the dicing die-bonding film is expanded at a temperature lower than or equal to the glass transition temperature of the adhesive film of the dicing die-
Method of processing semiconductor parts.

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