JP6310748B2 - Die bond film, die bond film with dicing sheet, semiconductor device, and method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a die bond film, a die bond film with a dicing sheet, a semiconductor device, and a method for manufacturing the semiconductor device.

  Conventionally, a die bond film with a dicing sheet may be used in the manufacture of a semiconductor device. The die-bonding film with a dicing sheet is a dicing sheet on which a die-bonding film can be peeled. In manufacturing a semiconductor device, a semiconductor wafer is held on a die bond film of a die bond film with a dicing sheet, and the semiconductor wafer is diced into individual chips. Thereafter, the chip is peeled off from the dicing sheet together with the die bond film, and fixed to an adherend such as a lead frame through the die bond film.

  When using a die bond film with a dicing sheet in which a die bond film is laminated on a dicing sheet and dicing a semiconductor wafer while holding the die bond film, it is necessary to cut the die bond film simultaneously with the semiconductor wafer. However, in a general dicing method using a diamond blade, adhesion between the die bond film and the dicing sheet due to the influence of heat generated during dicing, adhesion of semiconductor chips due to generation of cutting debris, cutting debris on the side surface of the semiconductor chip Therefore, it is necessary to slow down the cutting speed, which increases the cost.

  Therefore, in recent years, a semiconductor wafer can be easily divided along the planned division line by irradiating a laser beam onto the planned division line of the semiconductor wafer to form a modified region, and then this semiconductor is applied by applying a tensile tension. A method of breaking individual wafers to obtain individual semiconductor chips (see, for example, Patent Document 1 and Patent Document 2, hereinafter also referred to as “Stealth Dicing (registered trademark)”) has been proposed.

JP 2002-192370 A JP 2003-338467 A

  On the other hand, in recent years, as a method for obtaining individual semiconductor chips from a semiconductor wafer, first, a laser beam is irradiated from the back surface (circuit non-formation surface) of the semiconductor wafer to form a modified region on the planned division line of the semiconductor wafer. Then, in order to reduce the thickness of the semiconductor wafer, a method of grinding the back surface of the semiconductor wafer and then bonding a die bond film with a dicing sheet to the back surface of the semiconductor wafer has been devised. However, this method has a problem that cracks and chips may occur at the stage of grinding the back surface of the semiconductor wafer.

  The present invention has been made in view of the above-mentioned problems, and its object is to irradiate a laser beam onto a planned division line in a semiconductor wafer to form a modified region, thereby forming a semiconductor wafer on the planned division line. When the semiconductor wafer is obtained by dividing the semiconductor wafer by applying a tensile tension after making it easy to divide, it prevents the semiconductor wafer from being cracked or chipped at locations other than the planned division line. An object of the present invention is to provide a die bond film and a die bond film with a dicing sheet. Moreover, it is providing the semiconductor device manufactured using the said die-bonding film or the said die-bonding film with a dicing sheet. Moreover, it is providing the manufacturing method of the semiconductor device using the said die-bonding film with a dicing sheet.

  The inventors of the present application have studied a die bond film in order to solve the conventional problems. As a result, it has been found that by adopting the following configuration, it is possible to suppress the occurrence of cracking and chipping of a semiconductor wafer even when a thin semiconductor chip is obtained, and the present invention has been completed. I came to let you.

That is, the die-bonding film according to the present invention is characterized in that the light transmittance at a wavelength of 1065 nm is 80% or more.

According to the above configuration, since the light transmittance at a wavelength of 1065 nm of the die bond film is 80% or more, the laser light (for example, laser light having a peak near the wavelength of 1065 nm) from the die bond film side after being attached to the semiconductor wafer. The modified region can be formed on the planned dividing line of the semiconductor wafer. And it can be made to fracture | rupture at the said division | segmentation scheduled line after that.
Since the modified region can be formed in the semiconductor wafer while being held by the die bond film and can be broken as it is, it is possible to suppress the occurrence of cracks and chippings at locations other than the planned division lines.

Moreover, the die bond film with a dicing sheet according to the present invention is a die bond film with a dicing sheet in which the die bond film described above is provided on the dicing sheet,
The light transmittance at a wavelength of 1065 nm of the die bond film with a dicing sheet is preferably 50% or more.

According to the said structure, since the light transmittance in wavelength 1065nm of the die-bonding film with a dicing sheet is 50% or more, after affixing the die-bonding film with a dicing sheet to a semiconductor wafer, a laser beam (from the die-bonding film with a dicing sheet) For example, a modified region can be formed on a division planned line of a semiconductor wafer by irradiating a laser beam having a peak in the vicinity of a wavelength of 1065 nm. And it can be made to fracture | rupture at the said division | segmentation scheduled line after that.
Since the modified region can be formed on the semiconductor wafer while being held by the die bond film with the dicing sheet and can be broken as it is, it is possible to suppress the occurrence of cracks and chipping at locations other than the planned division line. it can. In particular, even when a thin semiconductor chip is obtained, it is possible to suppress the occurrence of cracks and chips.
Moreover, since the dicing sheet and the die bond film are laminated in advance, there is no need to provide a step of attaching the dicing sheet to the die bond film.

The said structure WHEREIN: It is preferable that the tensile fracture stress in -15 degreeC of the said die-bonding film is 50 N / mm < ² > or less.

When the tensile break stress at −15 ° C. of the die bond film is 50 N / mm ² or less, when a tensile tension is applied to the die bond film with a dicing sheet, the die bond film can be suitably broken at the planned dividing line. In addition, -15 degreeC is a typical value of the temperature at the time of applying a tension | tensile_strength to the die-bonding film with a dicing sheet, and making it fracture | rupture in a division | segmentation schedule line.

  The said structure WHEREIN: It is preferable that the tensile breaking elongation at -15 degreeC of the said die-bonding film is 30% or less.

  When the tensile break elongation at −15 ° C. of the die bond film is 30% or less, when a tensile tension is applied to the die bond film with a dicing sheet, the die bond film can be more suitably broken at the planned dividing line.

  The said structure WHEREIN: It is preferable that the said die-bonding film contains the phenol resin whose softening point is -15 degreeC or more.

  When the die bond film contains a phenol resin having a softening point of −15 ° C. or higher, the die bond film is easily broken without being greatly elongated.

  The said structure WHEREIN: It is preferable that the peak temperature of the loss tangent tan-delta of the said die-bonding film is -15 degreeC or more and less than 50 degreeC.

  When the peak temperature of the loss tangent tan δ of the die bond film is −15 ° C. or higher, the die bond film is easily broken without being elongated more. Further, when the peak temperature of the loss tangent tan δ of the die bond film is less than 50 ° C., good adhesion to the wafer can be ensured.

  The said structure WHEREIN: It is preferable that the said die-bonding film contains the acryl-type copolymer obtained by superposing | polymerizing the monomer raw material which contains alkyl acrylate or alkyl methacrylate in the ratio of 50 weight% or more.

  Increasing the light transmittance of the die bond film at a wavelength of 1065 nm when the die bond film contains an acrylic copolymer obtained by polymerizing a monomer raw material containing alkyl acrylate or alkyl methacrylate in a proportion of 50% by weight or more. Can do.

  In the above configuration, the dicing sheet is composed of a base material and a pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer is obtained by polymerizing a monomer raw material containing alkyl acrylate or alkyl methacrylate in a proportion of 50% by weight or more. It is preferable to contain the obtained acrylic copolymer.

  When the pressure-sensitive adhesive layer contains an acrylic copolymer obtained by polymerizing a monomer raw material containing 50% by weight or more of alkyl acrylate or alkyl methacrylate, light transmittance at a wavelength of 1065 nm of the pressure-sensitive adhesive layer Can be increased.

  In addition, a semiconductor device according to the present invention is manufactured using the die bond film described above or the die bond film with a dicing sheet described above.

  According to the said structure, since it manufactures from the semiconductor wafer by which generation | occurrence | production of a crack and a chip | tip was suppressed in places other than a division | segmentation planned line, the semiconductor device with improved yield is obtained.

In addition, a method for manufacturing a semiconductor device according to the present invention includes:
A manufacturing method of a semiconductor device using the die bond film with a dicing sheet as described above,
Step A for bonding the die bond film with the dicing sheet to the back surface of the semiconductor wafer;
Irradiating the semiconductor wafer with laser light from the die-bonding film-attached die bonding film side to form a modified region on a division planned line of the semiconductor wafer; and
A step C of forming a semiconductor chip by applying tensile tension to the die bond film with the dicing sheet to break the semiconductor wafer and the die bond film constituting the die bond film with the dicing sheet at the division line. It is characterized by that.

The die bond film with a dicing sheet has a light transmittance of 80% or more at a wavelength of 1065 nm of the die bond film, and a light transmittance of 80% or more at a wavelength of 1065 nm of the dicing sheet. According to the above configuration, the modified region is formed on the semiconductor wafer while being held by the die bond film with the dicing sheet (Step B), and the die bond film constituting the semiconductor wafer and the die bond film with the dicing sheet is left as it is. Since it breaks at the planned division line (step C), it is possible to suppress the occurrence of cracks and chipping at locations other than the planned division line.
Moreover, since the die-bonding film with a dicing sheet is used and the dicing sheet and the die-bonding film are laminated in advance, there is no need to provide a step of attaching the dicing sheet to the die-bonding film.

  The above-described configuration includes a step A-1 for attaching a back grind tape to the surface of the semiconductor wafer, and a step A-2 for grinding the back surface of the semiconductor wafer while holding the back grind tape. -1, and after the step A-2, the step A to the step C are preferably performed.

  According to the above configuration, the semiconductor wafer is irradiated with laser light while being sandwiched between both the back grind tape and the die bond film with the dicing sheet, and reformed on the division line of the semiconductor wafer. Form a region. Therefore, it is possible to further suppress the occurrence of cracks and chippings at locations other than the planned division lines.

  In the above-mentioned configuration, it is preferable that after the step B, the step B-1 for peeling the back grind tape from the semiconductor wafer is included, and the step C is performed after the step B-1.

  According to the above configuration, the semiconductor wafer is sandwiched between both the back grind tape and the die bond film with the dicing sheet until just before the process C. Therefore, it is possible to further suppress the occurrence of cracks and chippings at locations other than the planned division lines.

ADVANTAGE OF THE INVENTION According to this invention, even when it is a case where a thin semiconductor chip is obtained, the die-bonding film which can suppress that a crack and a chip | tip generate | occur | produce in a semiconductor wafer, and the die-bonding film with a dicing sheet are provided. it can. Moreover, the semiconductor device manufactured using the said die-bonding film or the said die-bonding film with a dicing sheet can be provided. Moreover, the manufacturing method of the semiconductor device using the said die-bonding film with a dicing sheet can be provided.

It is a cross-sectional schematic diagram which shows the die-bonding film with a dicing sheet which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment. (A), (b) is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment.

(Die bond film with dicing sheet)
The die bond film which concerns on one Embodiment of this invention, and the die bond film with a dicing sheet are demonstrated below. The die bond film which concerns on this embodiment can mention the thing of the state in which the dicing sheet is not bonded together in the die bond film with a dicing sheet demonstrated below. Therefore, hereinafter, a die bond film with a dicing sheet will be described, and the die bond film will be described therein. FIG. 1 is a schematic cross-sectional view showing a die bond film with a dicing sheet according to an embodiment of the present invention.

  As shown in FIG. 1, the die bond film 10 with a dicing sheet has a configuration in which a die bond film 16 is laminated on a dicing sheet 11. The dicing sheet 11 is configured by laminating an adhesive layer 14 on a substrate 12, and the die bond film 16 is provided on the adhesive layer 14.

  In the present embodiment, the dicing sheet 11 will be described with respect to the case where there is a portion 14b that is not covered with the die bond film 16, but the dicing film with a dicing sheet according to the present invention is not limited to this example. A die bond film may be laminated on the dicing sheet so as to cover the entire dicing sheet.

The die bond film 16 has a light transmittance at a wavelength of 1065 nm of 80% or more, preferably 85% or more, and more preferably 90% or more. Since the light transmittance at a wavelength of 1065 nm of the die bond film 16 is 80% or more, after being attached to a semiconductor wafer, a laser beam (for example, a laser beam having a peak near the wavelength of 1065 nm) is irradiated from the die bond film 16 side. The modified region can be formed on the division schedule line of the semiconductor wafer. And it can be made to fracture | rupture at the said division | segmentation scheduled line after that.
Since the modified region can be formed on the semiconductor wafer while being held by the die bond film 16 and can be broken as it is, it is possible to suppress the occurrence of cracks and chippings at locations other than the planned division lines.
Moreover, although the light transmittance in wavelength 1065nm of the die-bonding film 16 is so preferable that it is high, it can be made into 100% or less, for example.
The light transmittance of the die bond film 16 at a wavelength of 1065 nm can be controlled by the material constituting the die bond film 16. For example, it can be controlled by appropriately selecting the type and content of the thermoplastic resin constituting the die bond film 16, the type and content of the thermosetting resin, and the average particle size and content of the filler.

The light transmittance (%) at a wavelength of 1065 nm of the die bond film is determined under the following conditions.
<Light transmittance measurement conditions>
Measuring apparatus: UV-visible near-infrared spectrophotometer V-670DS (manufactured by JASCO Corporation)
Wavelength scanning speed: 2000 nm / min Measurement range: 300-1200 nm
Integrating sphere unit: ISN-723
Spot diameter: 1cm square

Further, the die bond film 16 preferably has a tensile breaking stress at −15 ° C. of 50 N / mm ² or less, more preferably 45 N / mm ² or less, and further preferably 40 N / mm ² or less. . When the tensile break stress at −15 ° C. of the die bond film 16 is 50 N / mm ² or less, when a tensile tension is applied to the die bond film with a dicing sheet 10, the die bond film 16 can be suitably broken at the planned dividing line. Moreover, it is preferable that the said tensile breaking stress is 5 N / mm < ² > or more from a viewpoint of handling property, for example. The measuring method of the tensile breaking stress is based on the method described in the examples.
The tensile breaking stress can be controlled by the material constituting the die bond film 16. For example, it can be controlled by appropriately selecting the type and content of the thermoplastic resin constituting the die bond film 16, the type and content of the thermosetting resin, and the average particle size and content of the filler.

Further, the die bond film 16 preferably has a tensile elongation at break of −15 ° C. of 30% or less, more preferably 25% or less, and further preferably 20% or less. When the tensile break elongation at −15 ° C. of the die bond film 16 is 30% or less, when a tensile tension is applied to the die bond film 10 with a dicing sheet, the die bond film 16 can be more preferably broken along the planned dividing line. Moreover, it is preferable that the said tensile breaking elongation is 1% or more from a viewpoint of scattering prevention of the die-bonding film at the time of a fracture | rupture, for example. The method for measuring the tensile elongation at break is according to the method described in the examples.
The tensile elongation at break can be controlled by the material constituting the die bond film 16. For example, it can be controlled by appropriately selecting the type and content of the thermoplastic resin constituting the die bond film 16, the type and content of the thermosetting resin, and the average particle size and content of the filler.

The die bond film 16 has a loss tangent tan δ peak temperature of preferably −15 ° C. or higher and lower than 50 ° C., more preferably −10 ° C. or higher and lower than 40 ° C., and −5 ° C. or higher and lower than 40 ° C. More preferably. When the peak temperature of the loss tangent tan δ of the die-bonding film 16 is −15 ° C. or higher, the die bond film 16 is easily broken without being greatly extended. Further, when the peak temperature of the loss tangent tan δ of the die bond film 16 is less than 50 ° C., good adhesion to the wafer can be ensured. The peak temperature of the loss tangent tan δ is determined by the method described in the examples.
The peak temperature of the loss tangent tan δ of the die bond film 16 can be controlled by the material constituting the die bond film 16. For example, it can be controlled by appropriately selecting the type and content of the thermoplastic resin constituting the die bond film 16 and the type and content of the thermosetting resin.

  Examples of the material constituting the die bond film 16 include a thermosetting resin. Moreover, you may use a thermoplastic resin and a thermosetting resin together.

  Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities that corrode the semiconductor chip is preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type. Biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type, trisglycidyl isocyanurate Type or glycidylamine type epoxy resin is used. These can be used alone or in combination of two or more. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Further, the phenol resin acts as a curing agent for the epoxy resin, for example, a novolac type phenol resin such as a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol novolac resin, a nonylphenol novolac resin, Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

Especially, it is preferable that the die-bonding film 16 contains the phenol resin whose softening point is -15 degreeC or more. The softening point is more preferably 0 ° C. or higher, and further preferably 30 ° C. or higher. When the die-bonding film 16 contains a phenol resin having a softening point of −15 ° C. or higher, the die-bonding film 16 is easily broken without being greatly elongated.
Moreover, although the said softening point is so preferable that it is high, it can be 100 degrees C or less, for example.
In this specification, the softening point is defined as a value measured based on a softening point test method (ring ball method) defined in JIS K 5902 and JIS K 2207. Specifically, the sample is melted as quickly as possible, and is carefully filled so that no bubbles are formed in the ring placed on a flat metal plate. After cooling, cut off the raised part from the plane including the top of the ring with a slightly heated sword. Next, a supporter (ring stand) is put in a glass container (heating bath) having a diameter of 85 mm or more and a height of 127 mm or more, and glycerin is poured until the depth becomes 90 mm or more. Next, the steel ball (diameter 9.5 mm, weight 3.5 g) and the ring filled with the sample are immersed in glycerin so as not to contact each other, and the temperature of glycerin is kept at 20 ° C. ± 5 ° C. for 15 minutes. Next, a steel ball is placed on the center of the surface of the sample in the ring, and this is placed in a fixed position on the support. Next, the distance from the upper end of the ring to the glycerin surface is maintained at 50 mm, a thermometer is placed, the position of the center of the mercury bulb of the thermometer is set to the same height as the center of the ring, and the container is heated. The flame of the Bunsen burner used for heating is placed between the center and the edge of the bottom of the container so that the heating is even. It should be noted that the rate at which the bath temperature increases after reaching 40 ° C. after heating has started must be 5.0 ± 0.5 ° C. per minute. The temperature at the time when the sample gradually softens and flows down from the ring and finally comes into contact with the bottom plate is read and used as the softening point. Two or more softening points are measured simultaneously, and the average value is adopted.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per 1 equivalent of the epoxy group in the epoxy resin component. . More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Among these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor chip is particularly preferable.

  The acrylic resin is not particularly limited, and an ester of acrylic acid or an ester of methacrylic acid (alkyl acrylate, or having a linear or branched alkyl group having 30 to 30 carbon atoms, particularly 4 to 18 carbon atoms, or Examples thereof include polymers (acrylic copolymers) containing one or more of (alkyl methacrylate) as a component. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include an ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and a dodecyl group.

Especially, it is preferable that the die-bonding film 16 contains the acryl-type copolymer obtained by superposing | polymerizing the monomer raw material which contains alkyl acrylate or alkyl methacrylate in the ratio of 50 weight% or more. The ratio is more preferably 60% by weight or more, and further preferably 70% by weight or more. When the die bond film 16 contains an acrylic copolymer obtained by polymerizing a monomer raw material containing alkyl acrylate or alkyl methacrylate in a proportion of 50% by weight or more, the light transmittance at a wavelength of 1065 nm of the die bond film 16 is increased. be able to.
Although it is preferable that the ratio is large, it can be, for example, 100% by weight or less.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalene sulfonic acid, and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.

  The blending ratio of the thermosetting resin is not particularly limited as long as the die bond film 16 exhibits a function as a thermosetting type when heated under predetermined conditions. It is preferably within the range of -70% by weight, and more preferably within the range of 10-60% by weight.

  The blending ratio of the thermoplastic resin is not particularly limited, but is preferably 3% by weight or more and more preferably 5% by weight or more with respect to the entire die bond film 16 from the viewpoint of film formability. . Moreover, from a heat resistant viewpoint, it is preferable that it is 95 weight% or less with respect to the whole die-bonding film 16, and it is more preferable that it is 90 weight% or less.

  When the die-bonding film 16 is crosslinked to some extent in advance, it is preferable to add a polyfunctional compound that reacts with a functional group at the molecular chain terminal of the polymer as a crosslinking agent. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  A conventionally well-known thing can be employ | adopted as said crosslinking agent. In particular, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, adducts of polyhydric alcohol and diisocyanate are more preferable. The addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it include other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.

  Moreover, a filler can be suitably mix | blended with the die-bonding film 16 according to the use. The blending of the filler makes it possible to impart conductivity, improve thermal conductivity, adjust the elastic modulus, and the like. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are preferable from the viewpoints of characteristics such as improvement in handleability, improvement in thermal conductivity, adjustment of melt viscosity, and imparting thixotropic properties. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whisker. , Boron nitride, crystalline silica, amorphous silica and the like. These can be used alone or in combination of two or more. From the viewpoint of improving thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable. Further, from the viewpoint that the above properties are well balanced, crystalline silica or amorphous silica is preferable. In addition, a conductive substance (conductive filler) may be used as the inorganic filler for the purpose of imparting conductivity and improving thermal conductivity. Examples of the conductive filler include metal powder in which silver, aluminum, gold, cylinder, nickel, conductive alloy and the like are made into a spherical shape, needle shape and flake shape, metal oxide such as alumina, amorphous carbon black, graphite and the like.

  The average particle size of the filler is preferably 0.001 to 1 μm, and more preferably 0.005 to 0.7 μm. By setting the average particle size of the filler to 0.001 μm or more, the tackiness of the film can be controlled. Moreover, the fall of the transmittance | permeability can be prevented by setting it as 1 micrometer or less. In addition, the average particle diameter of a filler is the value calculated | required, for example with the photometric type particle size distribution analyzer (The product made from HORIBA, apparatus name; LA-910).

  In addition to the said filler, another additive can be suitably mix | blended with the die-bonding film 16 as needed. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  The thickness of the die bond film 16 (total thickness in the case of a laminate) is not particularly limited, but is preferably 3 to 100 μm, more preferably 5 to 60 μm, and still more preferably 5 to 30 μm from the viewpoint of light transmittance. .

  As described above, the dicing sheet 11 has a configuration in which the pressure-sensitive adhesive layer 14 is laminated on the substrate 12.

  The base material 12 serves as a strength matrix of the die bond film 10 with a dicing sheet. For example, polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfide, aramid (Paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), or the like. When the adhesive layer 14 described later is formed of a radiation curable adhesive, the base material 12 is preferably formed of a material that transmits the radiation.

  The surface of the substrate 12 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high-voltage impact exposure, ionizing radiation treatment, etc., in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed. As the base material 12, the same kind or different kinds can be appropriately selected and used, and a blend of several kinds of materials can be used as necessary.

The substrate 12 preferably has a light transmittance at a wavelength of 1065 nm of 70% or more, and more preferably 80% or more. The base material 12 having a light transmittance of 70% or more at a wavelength of 1065 nm can be obtained by appropriately selecting a material constituting the base material 12.
Moreover, although the light transmittance in wavelength 1065nm of the base material 12 is so preferable that it is high, it can be made into 100% or less, for example.
The light transmittance at a wavelength of 1065 nm of the substrate is the same as the light transmittance at a wavelength of 1065 nm of the die bond film.

  The thickness of the substrate 12 is not particularly limited and can be determined as appropriate, but is generally about 5 to 200 μm. Especially, it is preferable that it is 30-130 micrometers from a viewpoint of pick-up property and light transmittance.

  It does not restrict | limit especially as an adhesive used for formation of the adhesive layer 14, For example, common pressure sensitive adhesives, such as an acrylic adhesive and a rubber adhesive, can be used. The pressure-sensitive adhesive is an acrylic pressure-sensitive adhesive based on an acrylic polymer from the standpoint of cleanability with an organic solvent such as ultrapure water or alcohol for electronic components that are resistant to contamination such as semiconductor wafers and glass. Is preferred.

  Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters, etc.) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

Among them, the pressure-sensitive adhesive layer 14 is an acrylic copolymer obtained by polymerizing a monomer raw material containing alkyl acrylate or alkyl methacrylate (acrylic acid ester or methacrylic acid ester) in a proportion of 50% by weight or more. It is preferable to contain. The ratio is more preferably 60% by weight or more, and further preferably 70% by weight or more. When the pressure-sensitive adhesive layer 14 contains an acrylic copolymer obtained by polymerizing a monomer raw material containing alkyl acrylate or alkyl methacrylate in a proportion of 50% by weight or more, the light transmittance at a wavelength of 1065 nm of the pressure-sensitive adhesive layer 14 Can be increased.
The ratio is preferably as high as possible, but can be, for example, 100% by weight or less.

  The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. You may go out. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization, if necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

  In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight with respect to 100 parts by weight of the base polymer. Furthermore, you may use additives, such as conventionally well-known various tackifier and anti-aging agent, other than the said component as needed to an adhesive.

  The pressure-sensitive adhesive layer 14 may be formed of a radiation curable pressure-sensitive adhesive. A radiation-curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of crosslinking by irradiation with radiation such as ultraviolet rays.

For example, by curing the radiation-curing pressure-sensitive adhesive layer 14 in accordance with the wafer attachment portion 16a of the die bond film 16 shown in FIG. 1, the portion 14a having a significantly reduced adhesive force can be easily formed. Since the die bond film 16 is affixed to the portion 14a that has been cured and has reduced adhesive strength, the interface between the portion 14a of the pressure-sensitive adhesive layer 14 and the die bond film 16 has a property of being easily peeled off during pickup. On the other hand, the portion not irradiated with radiation has a sufficient adhesive force, and forms the portion 14b. A wafer ring can be firmly fixed to the portion 14b.
In addition, when laminating | stacking a die-bonding film on a dicing sheet so that the whole dicing sheet may be covered, a wafer ring can be fixed to the outer peripheral part of a die-bonding film.

  As the radiation-curable pressure-sensitive adhesive, those having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. As the radiation curable pressure sensitive adhesive, for example, an addition type radiation curable pressure sensitive adhesive in which a radiation curable monomer component or an oligomer component is blended with a general pressure sensitive pressure sensitive adhesive such as an acrylic pressure sensitive adhesive or a rubber pressure sensitive adhesive. An agent can be illustrated.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight in the range of about 100 to 30,000 are suitable. The compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type radiation curable adhesive described above, the radiation curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain or main chain or at the main chain terminal as a base polymer. Intrinsic radiation curable pressure sensitive adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so they are stable without the oligomer components moving through the adhesive over time. It is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted, but it is easy in terms of molecular design to introduce the carbon-carbon double bond into the polymer side chain. It is. For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the intrinsic radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfonyl Black Aromatic sulfonyl chloride compounds such as 1; photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  Examples of radiation curable pressure-sensitive adhesives include photopolymerizable compounds such as addition polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having an epoxy group disclosed in JP-A-60-196956. And a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive containing a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and an onium salt-based compound.

  The radiation curable pressure-sensitive adhesive layer 14 may contain a compound that is colored by irradiation with radiation, if necessary. By including the compound to be colored in the pressure-sensitive adhesive layer 14 by irradiation, only the irradiated portion can be colored. That is, the portion 14a corresponding to the wafer pasting portion 16a shown in FIG. 1 can be colored. Therefore, it can be immediately determined by visual observation whether the adhesive layer 14 has been irradiated with radiation, the wafer pasting portion 16a can be easily recognized, and the workpieces can be easily pasted together. In addition, when detecting a semiconductor chip by an optical sensor or the like, the detection accuracy is increased, and no malfunction occurs when the semiconductor chip is picked up.

  A compound that is colored by radiation irradiation is a compound that is colorless or light-colored before radiation irradiation, but becomes colored by radiation irradiation. Preferable specific examples of such compounds include leuco dyes. As the leuco dye, conventional triphenylmethane, fluoran, phenothiazine, auramine, and spiropyran dyes are preferably used. Specifically, 3- [N- (p-tolylamino)]-7-anilinofluorane, 3- [N- (p-tolyl) -N-methylamino] -7-anilinofluorane, 3- [ N- (p-tolyl) -N-ethylamino] -7-anilinofluorane, 3-diethylamino-6-methyl-7-anilinofluorane, crystal violet lactone, 4,4 ', 4 "-trisdimethyl Examples include aminotriphenylmethanol, 4,4 ′, 4 ″ -trisdimethylaminotriphenylmethane, and the like.

  Developers preferably used together with these leuco dyes include conventionally used initial polymers of phenol formalin resins, aromatic carboxylic acid derivatives, electron acceptors such as activated clay, and further change the color tone. In some cases, various known color formers can be used in combination.

  Such a compound that is colored by irradiation with radiation may be once dissolved in an organic solvent or the like and then included in the radiation-curable adhesive, or may be finely powdered and included in the pressure-sensitive adhesive. The use ratio of this compound is 10% by weight or less in the pressure-sensitive adhesive layer 14, preferably 0.01 to 10% by weight, more preferably 0.5 to 5% by weight. If the ratio of the compound exceeds 10% by weight, the radiation applied to the pressure-sensitive adhesive layer 14 is excessively absorbed by the compound, so that the portion 14a of the pressure-sensitive adhesive layer 14 is not sufficiently cured, and is sufficiently sticky. Power may not decrease. On the other hand, in order to sufficiently color, it is preferable that the ratio of the compound is 0.01% by weight or more.

  In the case where the pressure-sensitive adhesive layer 14 is formed of a radiation curable pressure-sensitive adhesive, a part of the pressure-sensitive adhesive layer 14 so that the pressure-sensitive adhesive force of the portion 14a in the pressure-sensitive adhesive layer 14 <the pressure-sensitive adhesive strength of the other portion 14b. May be irradiated.

  Examples of the method for forming the portion 14a on the pressure-sensitive adhesive layer 14 include a method in which after the radiation-curable pressure-sensitive adhesive layer 14 is formed on the substrate 12, the portion 14a is partially irradiated with radiation to be cured. The partial radiation irradiation can be performed through a photomask in which a pattern corresponding to a portion other than the die-bonding film 16 wafer attaching portion 16a is formed. Moreover, the method etc. of irradiating with a spot radiation and making it harden | cure are mentioned. The radiation-curable pressure-sensitive adhesive layer 14 can be formed by transferring what is provided on the separator onto the substrate 12. Partial radiation curing can also be performed on the radiation curable pressure-sensitive adhesive layer 14 provided on the separator.

  In the case where the pressure-sensitive adhesive layer 14 is formed of a radiation curable pressure-sensitive adhesive, all or a part of the base material 12 other than the part corresponding to the wafer bonding part 16a is shielded from light. It is possible to form the portion 14a having a reduced adhesive force by forming a radiation-curing pressure-sensitive adhesive layer 14 and then irradiating it with radiation to cure the portion corresponding to the wafer pasting portion 16a. As a light shielding material, what can become a photomask on a support film can be prepared by printing, vapor deposition, or the like. According to this manufacturing method, the die-bonding film 10 with a dicing sheet can be manufactured efficiently.

  In the case where curing inhibition by oxygen occurs during irradiation, it is desirable to block oxygen (air) from the surface of the radiation curable pressure-sensitive adhesive layer 14 by some method. For example, a method of covering the surface of the pressure-sensitive adhesive layer 14 with a separator, a method of irradiating ultraviolet rays or the like in a nitrogen gas atmosphere, and the like can be mentioned.

  The thickness of the pressure-sensitive adhesive layer 14 is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the die bond film 16. Preferably it is 2-40 micrometers, Furthermore, 5-30 micrometers is preferable.

The pressure-sensitive adhesive layer 14 preferably has a light transmittance at a wavelength of 1065 nm of 70% or more, and more preferably 80% or more. The pressure-sensitive adhesive layer 14 having a light transmittance of 70% or more at a wavelength of 1065 nm can be obtained by appropriately selecting a material constituting the pressure-sensitive adhesive layer 14.
Moreover, although the light transmittance in wavelength 1065nm of the adhesive layer 14 is so preferable that it is high, it can be made into 100% or less, for example.
The light transmittance of the pressure-sensitive adhesive layer at a wavelength of 1065 nm is the same as the light transmittance of the die bond film at a wavelength of 1065 nm.

The light transmittance at a wavelength of 1065 nm of the die bond film with a dicing sheet 10 is preferably 50% or more, more preferably 55% or more, and further preferably 60% or more.
When the light transmittance at a wavelength of 1065 nm of the die bond film with a dicing sheet 10 is 50% or more, after the die bond film with a dicing sheet 10 is attached to a semiconductor wafer, a laser beam is irradiated from the die bond film with the dicing sheet 10 side. The modified region can be suitably formed on the division schedule line of the semiconductor wafer.
As a method for setting the light transmittance at a wavelength of 1065 nm of the die bond film with a dicing sheet 10 to 50% or more, a substrate 12 having a light transmittance at a wavelength of 1065 nm or more is selected, and the pressure sensitive adhesive 14 is a light beam at a wavelength of 1065 nm. Examples thereof include a method of selecting a material having a certain transmittance or more and selecting a die bond film 16 having a light transmittance at a wavelength of 1065 nm or more.
Moreover, although the light transmittance in wavelength 1065nm of the die-bonding film 10 with a dicing sheet is so preferable that it is high, it can be 100% or less, for example.
The light transmittance at a wavelength of 1065 nm of the die bond film with the dicing sheet is the same as the light transmittance at a wavelength of 1065 nm of the die bond film.

  The die bond film 16 of the die bond film with a dicing sheet 10 is preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the die bond film 16 until it is put into practical use. Further, the separator can be used as a support base material when the die bond film 16 is transferred to the pressure-sensitive adhesive layer 14. The separator is peeled off when a workpiece (semiconductor wafer) is stuck on the die bond film 16 of the die bond film 10 with a dicing sheet. As the separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.

The die-bonding film 10 with a dicing sheet according to the present embodiment is produced, for example, as follows.
First, the base material 12 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, after a pressure-sensitive adhesive composition solution is applied onto the substrate 12 to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinked as necessary), and the pressure-sensitive adhesive layer 14 is formed. Form. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 80 to 150 ° C. and the drying time is 0.5 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, the coating film may be dried on the said drying conditions, and the adhesive layer 14 may be formed. Then, the adhesive layer 14 is bonded together with the separator on the base material 12. Thereby, the dicing sheet 11 is produced.

The die bond film 16 is produced as follows, for example.
First, an adhesive composition solution that is a material for forming the die bond film 16 is prepared. As described above, the adhesive composition solution contains the resin and other additives as required.

  Next, the adhesive composition solution is applied on the substrate separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions to form the die bond film 16. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 70 to 160 ° C. and the drying time is 1 to 5 minutes. Moreover, after apply | coating adhesive composition solution on a separator and forming a coating film, the coating film may be dried on the said drying conditions, and the die-bonding film 16 may be formed. Then, an adhesive bond layer is bonded together with a separator on a base material separator.

  Subsequently, the separator is peeled off from each of the dicing sheet 11 and the die bond film 16, and both are bonded so that the adhesive layer 14 and the die bond film 16 become a bonding surface. Bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and is preferably 30 to 50 ° C., for example, and more preferably 35 to 45 ° C. Moreover, a linear pressure is not specifically limited, For example, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable. Thereby, the die-bonding film 10 with a dicing sheet is obtained.

(Method for manufacturing semiconductor device)
Next, a method for manufacturing a semiconductor device will be described.
Below, the manufacturing method of the semiconductor device using the die-bonding film 10 with a dicing sheet is demonstrated. However, in the present invention, a semiconductor device can be manufactured using the die bond film 16 without using the die bond film 10 with a dicing sheet. In this case, if the dicing sheet 11 is bonded to the die bond film 16 to form the die bond film 10 with a dicing sheet, thereafter, the same method as the semiconductor device manufacturing method using the die bond film 10 with a dicing sheet is used. be able to. Therefore, hereinafter, a method for manufacturing a semiconductor device using the die bond film with a dicing sheet 10 will be described with reference to FIGS.
In addition, the process of bonding the dicing sheet 11 to the die bond film 16 may be performed before or after the process (process B) of irradiating the laser beam to form the modified region on the division line of the semiconductor wafer. Although better, the former is preferred.

  2 to 8 are schematic cross-sectional views for explaining a method for manufacturing a semiconductor device according to this embodiment.

  First, as shown in FIG. 2, a back grind tape 44 is bonded to the surface 4F (circuit forming surface) of the semiconductor wafer 4 (step A-1). A conventionally known back grind tape 44 can be used. For example, a semiconductor wafer 4 having a thickness of 1 to 800 μm can be used.

  Next, as shown in FIG. 3, the back surface of the semiconductor wafer 4 is ground with a grinding wheel 45 while the back grind tape 44 is held, so that the semiconductor wafer 4 is thinned (step A-2). As thickness of the semiconductor wafer 4 after back surface grinding, it can be set as 1-100 micrometers, 1-50 micrometers, etc., for example.

  Next, as shown in FIG. 4, the die bond film with dicing sheet 10 is bonded to the back surface 4R of the semiconductor wafer 4 after the back surface grinding with the die bond film 16 as the bonding surface (step A). At this time, the die bond film with a dicing sheet 10 is bonded to the back surface 4R of the semiconductor wafer 4 with the back grind tape 44 being bonded. This step can be performed while pressing with a pressing means such as a pressure roll. The attaching temperature at the time of mounting is not particularly limited, but is preferably in the range of 40 to 80 ° C.

  The back grind tape 44 and the die bond film 10 with a dicing sheet can be attached to the semiconductor wafer 4 by using a conventionally known tape attaching device, and the semiconductor wafer can also be ground by using a conventionally known grinding device. it can.

Next, as shown in FIG. 5, the semiconductor wafer 4 is irradiated with a laser beam 48 from the die bond film with dicing sheet 10 side to form a modified region 4L on the division line of the semiconductor wafer 4 (step B). . The division lines are set in a lattice shape on the semiconductor wafer 4 so that the semiconductor wafer 4 can be divided into a plurality of semiconductor chips. This method is a method of forming a modified region inside a semiconductor wafer by ablation by multiphoton absorption by aligning a condensing point inside the semiconductor wafer, irradiating a laser beam along a grid-like division planned line. . What is necessary is just to adjust suitably within the range of the following conditions as laser beam irradiation conditions.
<Laser irradiation conditions>
(A) Laser light
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross-sectional area 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse
Repeat frequency 100 kHz or less
Pulse width 1μs or less
Output 1mJ or less
Laser light quality TEM00
Polarization characteristics Linearly polarized (B) condensing lens
Magnification 100 times or less
NA 0.55
Transmittance with respect to laser beam wavelength: 100% or less (C) Moving speed of placing table on which semiconductor substrate is placed 280 mm / sec or less Note that a method of forming the modified region 4L on the division line by irradiating laser beam Is described in detail in Japanese Patent No. 3408805 and Japanese Patent Application Laid-Open No. 2003-338567, and detailed description thereof will be omitted here.

  In this embodiment, a die bond film 10 with a dicing sheet in which a die bond film 16 having a light transmittance of 80% or more at a wavelength of 1065 nm and a dicing sheet 11 having a light transmittance of 80% or more at a wavelength of 1065 nm are used. ing. Therefore, the irradiated laser beam having a wavelength of 1065 nm is transmitted through the die-bonding film with dicing sheet 10 and is irradiated onto the back surface 4 </ b> R of the semiconductor wafer 4. Therefore, the modified region 4L can be formed on the back surface 4R of the semiconductor wafer 4 by the laser beam in a state where the die bond film 10 with a dicing sheet is attached.

  Next, as shown in FIG. 6, the back grind tape 44 is peeled from the semiconductor wafer 4 (step B-1).

  Next, by applying tensile tension to the die bond film 10 with the dicing sheet, the semiconductor wafer 4 and the die bond film 16 are broken at the planned dividing line to form the semiconductor chip 5 (step C). In this step, for example, a commercially available wafer expansion device can be used. Specifically, as shown in FIG. 7A, a dicing ring 31 is attached to the periphery of the pressure-sensitive adhesive layer 14 of the die-bonding film with a dicing sheet 10 to which the semiconductor wafer 4 is bonded, and then a wafer expansion device 32. Secure to. Next, as shown in FIG.7 (b), the pushing-up part 33 is raised and tension | tensile_strength is applied to the die-bonding film 10 with a dicing sheet.

  At this time, the expanding speed (speed at which the push-up portion rises) is preferably 1 to 400 mm / second, and more preferably 50 to 400 mm / second. By setting the expanding speed to 1 mm / second or more, the semiconductor wafer 4 and the die bond film 16 can be easily broken almost simultaneously. Moreover, it can prevent that the dicing sheet 11 fractures | ruptures by setting an expanding speed to 400 mm / sec or less.

  Moreover, it is preferable that it is 5-50 mm, and, as for the amount of expands (amount which the pushing-up part rose), it is more preferable that it is 5-40 mm, and it is especially preferable that it is 5-30 mm. By making the expand amount 5 mm or more, the semiconductor wafer 4 and the die bond film 16 can be easily broken. Moreover, it can prevent that the dicing sheet 11 fractures | ruptures by making expand amount into 50 mm or less.

  Further, the expansion temperature may be adjusted between −50 and 100 ° C. as necessary, but in the present invention, it is preferably −20 to 30 ° C., and more preferably −10 to 25 ° C. preferable. Since the die bond film has a lower elongation at break and is more likely to break, the expand temperature is preferably lower in terms of preventing yield loss due to defective breakage of the die bond film.

  Thus, by applying tensile tension to the die bond film 10 with a dicing sheet, a die bond that adheres to the semiconductor wafer 4 while causing cracks in the thickness direction of the semiconductor wafer 4 starting from the modified region 4L of the semiconductor wafer 4 is obtained. The film 16 can be broken, and the semiconductor chip 5 with the die bond film 16 can be obtained.

  As described above, in the present embodiment, the modified region can be formed on the back surface of the semiconductor wafer 4 by the laser beam in a state where the die bond film 10 with a dicing sheet is attached to the semiconductor wafer 4. And after forming the modification | reformation area | region 4L, the semiconductor wafer 4 and the die-bonding film 16 are fractured | ruptured in the division | segmentation scheduled line in the state, without peeling the semiconductor wafer 4 from the die-bonding film 10 with a dicing sheet ( Step C). That is, after the modified region 4L is formed, the semiconductor wafer 4 is not brought into a single state. Accordingly, it is possible to suppress the occurrence of cracks and chipping at locations other than the division planned lines.

  Next, the semiconductor chip 5 is picked up in order to peel off the semiconductor chip 5 adhered and fixed to the die bond film 10 with a dicing sheet (pickup step). The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up each semiconductor chip 5 from the die bond film with dicing sheet 10 side with a needle and picking up the pushed semiconductor chip 5 with a pickup device, etc. can be mentioned.

  The pickup conditions are not particularly limited, but in terms of preventing chipping, the needle push-up speed is preferably 5 to 100 mm / second, more preferably 5 to 10 mm / second.

  Here, the pickup may be performed after the pressure-sensitive adhesive layer 14 is irradiated with radiation such as ultraviolet rays when the pressure-sensitive adhesive layer 14 is a radiation curable type and radiation has not been previously irradiated. Thereby, the adhesive force with respect to the die-bonding film 16 of the adhesive layer 14 falls, and peeling of the semiconductor chip 5 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip 5. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary. Moreover, the above-mentioned thing can be used as a light source used for ultraviolet irradiation.

  Next, as shown in FIG. 8, the picked-up semiconductor chip 5 is temporarily fixed to the adherend 6 through the die bond film 16 (fixing step). Examples of the adherend 6 include a lead frame, a TAB film, a substrate, and a separately manufactured semiconductor chip. The adherend 6 may be, for example, a deformable adherend that can be easily deformed or a non-deformable adherend (such as a semiconductor wafer) that is difficult to deform.

  A conventionally well-known thing can be used as said board | substrate. As the lead frame, a metal lead frame such as a Cu lead frame or a 42 Alloy lead frame, or an organic substrate made of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. However, the present invention is not limited to this, and includes a circuit board that can be used by mounting a semiconductor chip and electrically connecting to the semiconductor chip.

  Next, wire bonding is performed in which the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 are electrically connected by the bonding wire 7 (wire bonding step). As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire or the like is used. The temperature at the time of wire bonding is 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is several seconds to several minutes. The connection is performed by a combination of vibration energy by ultrasonic waves and crimping energy by applying pressure while being heated so as to be within the temperature range. This step can be performed without thermosetting the die bond film 16. Further, the semiconductor chip 5 and the adherend 6 are not fixed by the die bond film 16 in the process of this step.

  Next, the semiconductor chip 5 is sealed with the sealing resin 8 (sealing step). This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. Although the heating temperature at the time of resin sealing is normally performed at 175 degreeC for 60 to 90 second, this invention is not limited to this, For example, it can cure at 165 to 185 degreeC for several minutes. Thereby, the sealing resin is cured, and the semiconductor chip 5 and the adherend 6 are fixed through the die bond film 16. That is, in the present invention, even when the post-curing step described later is not performed, the die bonding film 16 can be fixed in this step, and the number of manufacturing steps can be reduced and the semiconductor device manufacturing period can be reduced. It can contribute to shortening.

  In the post-curing step, the sealing resin 8 that is insufficiently cured in the sealing step is completely cured. Even if the die bond film 16 is not completely thermoset in the sealing process, the die bond film 16 can be completely cured together with the sealing resin 8 in this process. Although the heating temperature in this process changes with kinds of sealing resin, it exists in the range of 165-185 degreeC, for example, and heating time is about 0.5 to 8 hours.

  In the embodiment described above, the case where the wire bonding process is performed without temporarily curing the die bond film 16 after the semiconductor chip 5 with the die bond film 16 is temporarily fixed to the adherend 6 has been described. However, in the present invention, after the semiconductor chip 5 with the die bond film 16 is temporarily fixed to the adherend 6, the die bond film 16 is thermally cured, and then a normal die bonding process is performed in which a wire bonding process is performed. Also good.

  In addition, the die-bonding film with a dicing sheet of this invention can be used suitably also when laminating | stacking a some semiconductor chip and carrying out three-dimensional mounting. At this time, the die bond film and the spacer may be laminated between the semiconductor chips, or only the die bond film may be laminated between the semiconductor chips without laminating the spacers. Is possible.

  In the above-described embodiment, the case where the back surface grinding of the semiconductor wafer is performed has been described. However, the present invention is not limited to this example, and the backside grinding of the semiconductor wafer may not be performed. In this case, using a protective tape similar to the back grind tape 44, the surface of the semiconductor wafer is attached to the protective tape, and then a die bond film with a dicing sheet is attached to the back surface of the semiconductor wafer without performing back surface grinding. Thereafter, the modified region may be formed by laser light, and the protective tape may be peeled off, and then the semiconductor wafer and the die bond film may be broken along the planned dividing line. Also, attach a die bond film with a dicing sheet to the backside of the semiconductor wafer without attaching anything to the surface of the semiconductor wafer, and then irradiate laser light from the die bond film side with the dicing sheet to form a modified region. Finally, the semiconductor wafer and the die-bonding film may be broken along the planned division line.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this example are not intended to limit the gist of the present invention only to those unless otherwise limited. In the following, “parts” means parts by weight.

<Production of die bond film>
Example 1
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.
(A) Acrylate ester copolymer (manufactured by Nagase ChemteX Corporation, trade name: SG-700AS, ethyl acrylate 38, ethyl acrylate, butyl acrylate, and acrylonitrile) % By weight, 40% by weight butyl acrylate, 17% by weight acrylonitrile)
70 parts (b) epoxy resin (manufactured by DIC, product name: HP-7200L)
26 parts (c) phenolic resin (Maywa Kasei Co., Ltd., product name: MEH-7800H, softening point: 84 ° C.)
24 parts (d) filler (manufactured by Admatechs, product name: YA010C-SM1, average particle size: 0.01 μm)
20 copies

  This adhesive composition solution was applied onto a release film (release liner) made of a polyethylene terephthalate film having a thickness of 38 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film A having a thickness of 20 μm was produced.

(Example 2)
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.
(A) Acrylate ester copolymer (manufactured by Nagase ChemteX Corporation, trade name: SG-P3, content of each main monomer: ethyl acrylate 30) containing ethyl acrylate, butyl acrylate, and acrylonitrile as main monomers Weight%, butyl acrylate 39 weight%, acrylonitrile 28 weight%)
55 parts (b) epoxy resin (manufactured by DIC, product name: HP-4700)
26 parts (c) phenolic resin (Maywa Kasei Co., Ltd., product name: MEH-7800-4L, softening point: 60 ° C.)
24 parts (d) filler (manufactured by Admatechs, product name: SO-E5, average particle size: 0.5 μm)
30 copies

This adhesive composition solution was applied onto a release film (release liner) made of a polyethylene terephthalate film having a thickness of 38 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film B having a thickness of 20 μm was produced.

(Comparative Example 1)
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.
(A) Acrylate ester copolymer (manufactured by Nagase ChemteX Corporation, trade name: SG-700AS, butyl acrylate and acrylonitrile as the main monomer, content of each main monomer: 38% by weight of ethyl acrylate, (Butyl acrylate 40% by weight, acrylonitrile 17% by weight)
170 parts (b) epoxy resin (manufactured by DIC, product name: HP-7200L)
26 parts (c) phenolic resin (Maywa Kasei Co., Ltd., product name: MEH-7800H, softening point: 84 ° C.)
24 parts (d) filler (manufactured by Admatechs, product name: SO-E5, average particle size: 1.5 μm)
175 parts

  This adhesive composition solution was applied onto a release film (release liner) made of a polyethylene terephthalate film having a thickness of 38 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thereby, a die bond film C having a thickness of 20 μm was produced.

(Comparative Example 2)
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.
(A) Acrylate ester copolymer (manufactured by Nagase ChemteX Corporation, trade name: SG-700AS, ethyl acrylate 38, ethyl acrylate, butyl acrylate, and acrylonitrile) % By weight, 40% by weight butyl acrylate, 17% by weight acrylonitrile)
50 parts (b) epoxy resin (manufactured by DIC, product name: HP-7200L)
54 parts (c) phenolic resin (Maywa Kasei Co., Ltd., product name: MEH-8000H, softening point: less than -15 ° C)
56 parts (d) filler (manufactured by Admatechs, product name: SO-E3, average particle size: 0.5 μm)
5 copies

  This adhesive composition solution was applied onto a release film (release liner) made of a polyethylene terephthalate film having a thickness of 38 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thereby, a die bond film D having a thickness of 20 μm was produced.

(Measurement of light transmittance of the die bond film at a wavelength of 1065 nm)
The light transmittance at a wavelength of 1065 nm of the die bond film according to the example and the comparative example was measured. Specifically, the die bond films (thickness: 20 μm) according to the examples and comparative examples were measured under the following conditions, and the light transmittance (%) at 1065 nm was determined. The results are shown in Table 1.
<Light transmittance measurement conditions>
Measuring apparatus: UV-visible near-infrared spectrophotometer V-670DS (manufactured by JASCO Corporation)
Wavelength scanning speed: 2000 nm / min Measurement range: 300-1200 nm
Integrating sphere unit: ISN-723
Spot diameter: 1cm square

(Measurement of tensile break stress of die bond film at -15 ° C)
The tensile fracture stress at −15 ° C. of the die bond films according to Examples and Comparative Examples was measured. Specifically, the die bond films of Examples and Comparative Examples were laminated so as to have a thickness of 200 μm and cut into strip-shaped measurement pieces each having an initial length of 40 mm and a width of 10 mm. Next, using an autograph (manufactured by Shimadzu Corporation), the tensile breaking stress at −15 ° C. was measured under the conditions of a tensile speed of 50 mm / min and a distance between chucks of 10 mm. The results are shown in Table 1.

(Measurement of tensile elongation at -15 ° C of die bond film)
The tensile break elongation at -15 degreeC of the die-bonding film which concerns on an Example and a comparative example was measured. Specifically, the die bond films of Examples and Comparative Examples were cut so as to be strip-shaped measurement pieces having an initial length of 40 mm and a width of 10 mm, respectively. Next, tensile elongation at −15 ° C. was measured using an autograph (manufactured by Shimadzu Corporation) under the conditions of a tensile speed of 50 mm / min and a distance between chucks of 10 mm. The results are shown in Table 1.

(Measurement of peak temperature of loss tangent tan δ of die bond film)
The peak temperature of the loss tangent tan δ of the die bond film according to the example and the comparative example was measured. Specifically, the die bond films of Examples and Comparative Examples were each laminated to a thickness of 200 μm, and a measurement sample having a width of 10 mm and a length of 40 mm was used. Next, storage elastic modulus (E ′) and loss elastic modulus (E ″) at −50 to 300 ° C. are measured using a dynamic viscoelasticity measuring device (RSA (III), manufactured by Rheometric Scientific). , Measured under conditions of a distance between chucks of 22.5 mm, a frequency of 1 Hz, and a heating rate of 10 ° C./min. Further, from the storage elastic modulus (E ′) and the loss elastic modulus (E ″), The loss tangent tan δ was calculated.
Loss tangent tan δ = E ″ / E ′
A loss tangent curve was created by plotting the calculated loss tangent (tan δ) against temperature to obtain a peak temperature. The results are shown in Table 1.

<Dicing sheet>
Example 1
A dicing sheet A according to Example 1 was prepared as follows.

In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer and a stirring device, 70 parts of 2-ethylhexyl acrylate (2EHA), 25 parts of 2-hydroxyethyl acrylate (HEA), 0.2 part of benzoyl peroxide, And 60 parts of toluene was put, and the polymerization process was performed at 61 degreeC in nitrogen stream for 6 hours, and the acrylic polymer A was obtained.
To this acrylic polymer A, 10 parts of 2-methacryloyloxyethyl isocyanate (MOI) was added and subjected to an addition reaction for 48 hours at 50 ° C. in an air stream to obtain an acrylic polymer A ′.
Next, 4 parts of a photopolymerization initiator (trade name “Irgacure 651”, manufactured by Ciba Specialty Chemicals) was added to 100 parts of the acrylic polymer A ′ to prepare an adhesive solution.
The pressure-sensitive adhesive solution prepared above was applied on the surface of the PET release liner that had been subjected to the silicone treatment, and heat-crosslinked at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer precursor having a thickness of 20 μm. Next, a base film with a thickness of 80 μm having a two-layer structure of a polypropylene layer (thickness 40 μm) and a polyethylene layer (thickness 40 μm) is prepared, and the base material is bonded to the surface of the pressure-sensitive adhesive precursor with the polypropylene layer as a bonding surface. The film was laminated. Only the part (diameter 220 mm) corresponding to the semiconductor wafer attachment part (diameter 200 mm) of the adhesive layer precursor was irradiated with ultraviolet rays of 500 mJ to form an adhesive layer. Thereby, a dicing sheet A according to Example 1 was obtained.

(Example 2)
A dicing sheet B according to Example 2 was prepared as follows.

In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer and a stirring device, 75 parts of 2-ethylhexyl acrylate (2EHA), 20 parts of 2-hydroxyethyl acrylate (HEA), 0.2 part of benzoyl peroxide, And 60 parts of toluene was put, and the polymerization process was performed at 61 degreeC in nitrogen stream for 6 hours, and the acrylic polymer B was obtained.
To this acrylic polymer B, 8 parts of 2-methacryloyloxyethyl isocyanate (MOI) was added and subjected to an addition reaction for 48 hours at 50 ° C. in an air stream to obtain an acrylic polymer B ′.
Next, for 100 parts of acrylic polymer B ′, 1 part of an isocyanate-based crosslinking agent (trade name “Coronate L”, manufactured by Nippon Polyurethane Co., Ltd.) and a photopolymerization initiator (trade name “Irgacure 651”, Ciba (Specialty Chemicals) 4 parts were added to prepare an adhesive solution.
The pressure-sensitive adhesive solution prepared above was applied on the surface of the PET release liner that had been subjected to the silicone treatment, and heat-crosslinked at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer precursor having a thickness of 30 μm. Next, a base film with a thickness of 80 μm having a two-layer structure of a polypropylene layer (thickness 40 μm) and a polyethylene layer (thickness 40 μm) is prepared, and the base material is bonded to the surface of the pressure-sensitive adhesive precursor with the polypropylene layer as a bonding surface. The film was laminated. Thereafter, it was stored at 50 ° C. for 24 hours. Only the part (diameter 220 mm) corresponding to the semiconductor wafer attachment part (diameter 200 mm) of the adhesive layer precursor was irradiated with ultraviolet rays of 500 mJ to form an adhesive layer. Thereby, a dicing sheet B according to Example 2 was obtained.

(Comparative Example 1)
As a dicing sheet according to Comparative Example 1, a dicing sheet A similar to Example 1 was prepared.

(Comparative Example 2)
As a dicing sheet according to Comparative Example 2, a dicing sheet B similar to Example 2 was prepared.

<Production of die bond film with dicing sheet>
Example 1
The die bond film A and the dicing sheet A were bonded together to obtain a die bond film A with a dicing sheet according to Example 1. The bonding conditions were 40 ° C., 10 mm / second, and a linear pressure of 30 kgf / cm.

(Example 2)
The die bond film B and the dicing sheet B were bonded together to obtain a die bond film B with a dicing sheet according to Example 2. The bonding conditions were 40 ° C., 10 mm / second, and a linear pressure of 30 kgf / cm.

(Comparative Example 1)
The die bond film C and the dicing sheet A were bonded together to obtain a die bond film C with a dicing sheet according to Comparative Example 1. The bonding conditions were 40 ° C., 10 mm / second, and a linear pressure of 30 kgf / cm.

(Comparative Example 2)
The die bond film D and the dicing sheet B were bonded together to obtain a die bond film D with a dicing sheet according to Comparative Example 2. The bonding conditions were 40 ° C., 10 mm / second, and a linear pressure of 30 kgf / cm.

(Measurement of light transmittance at a wavelength of 1065 nm of a die bond film with a dicing sheet)
The light transmittance at a wavelength of 1065 nm of the die bond film with a dicing sheet according to the example and the comparative example was measured. Specifically, a die-bonding film with a dicing sheet according to Examples and Comparative Examples (thickness: 120 μm in Example 1 and Comparative Example 1, and 130 μm in Example 2 and Comparative Example 2) It measured on condition of the following and calculated | required the light transmittance (%) in 1065 nm. The results are shown in Table 1.
<Light transmittance measurement conditions>
Measuring apparatus: UV-visible near-infrared spectrophotometer V-670DS (manufactured by JASCO Corporation)
Wavelength scanning speed: 2000 nm / min Measurement range: 300-1200 nm
Integrating sphere unit: ISN-723
Spot diameter: 1cm square

(Evaluation of number of wafer cracks)
A semiconductor wafer (diameter: 12 inches, thickness: 750 μm) was attached to a background tape (manufactured by Nitto Denko Corporation, product name: UB-3102D). The pasting conditions were 50 ° C., 10 mm / second, and linear pressure 30 kgf / cm.
Next, the die bond film with a dicing sheet which concerns on an Example and a comparative example was affixed on the surface on the opposite side to the surface where the background tape of the semiconductor wafer was affixed. The pasting conditions were 60 ° C., 10 mm / second, and linear pressure 30 kgf / cm.
Next, using Tokyo Seimitsu Co., Ltd.'s ML300-Integration as the laser processing device, the light converging point is aligned with the inside of the semiconductor wafer from the die bond film side with a dicing sheet, and a grid-like (10 mm x 10 mm) division planned line A laser beam was irradiated along the surface to form a modified region inside the semiconductor wafer. The laser light irradiation conditions were as follows. Thereafter, expansion was performed. The expanding conditions were −15 ° C., an expanding speed of 200 mm / second, and an expanding amount of 15 mm. This test was performed 10 times for each example and comparative example. After the expansion, the number of times that the wafer was confirmed to be cracked at a place other than the planned dividing line was counted. The results are shown in Table 1.
(A) Laser light
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross-sectional area 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse
Repetition frequency 100kHz
Pulse width 30ns
Output 20μJ / pulse
Laser light quality TEM00 40
Polarization characteristics Linearly polarized (B) condensing lens
50 times magnification
NA 0.55
60% transmittance for laser wavelength
(C) Moving speed of the table on which the semiconductor substrate is placed 100 mm / second

DESCRIPTION OF SYMBOLS 10 Die bond film with dicing sheet 11 Dicing sheet 12 Base material 14 Adhesive layer 16 Die bond film 4 Semiconductor wafer 5 Semiconductor chip 6 Substrate 7 Bonding wire 8 Sealing resin

Claims (10)

Containing an acrylic copolymer obtained by polymerizing a monomer raw material containing 50% by weight or more of alkyl acrylate or alkyl methacrylate,
The light transmittance at a wavelength of 1065 nm is 80% or more,
A die bond film having a tensile elongation at break of -15 ° C of 30% or less. A die bond film with a dicing sheet, wherein the die bond film according to claim 1 is provided on a dicing sheet,
The die bond film with a dicing sheet, wherein the die bond film with a dicing sheet has a light transmittance of 50% or more at a wavelength of 1065 nm. The die bond film with a dicing sheet according to claim 2, wherein the die bond film has a tensile breaking stress at -15 ° C of 50 N / mm ² or less.   The die bond film with a dicing sheet according to claim 2 or 3, wherein the die bond film contains a phenol resin having a softening point of -15 ° C or higher.   5. The die bond film with a dicing sheet according to claim 2, wherein a peak temperature of a loss tangent tan δ of the die bond film is −15 ° C. or higher and lower than 50 ° C. 5. The dicing sheet is composed of a base material and an adhesive layer,
The pressure-sensitive adhesive layer, alkyl acrylate, or any of claims 2-5, characterized in that it contains an alkyl methacrylate acrylic copolymer obtained by polymerizing a monomer material in a proportion of more than 50 wt% 2. A die bond film with a dicing sheet according to claim 1. A semiconductor device manufactured using the die bond film according to claim 1 or the die bond film with a dicing sheet according to any one of claims 2 to 6 . It is a manufacturing method of the semiconductor device using the die-bonding film with a dicing sheet according to any one of claims 2 to 7 ,
Step A for bonding the die bond film with the dicing sheet to the back surface of the semiconductor wafer;
Irradiating the semiconductor wafer with laser light from the die-bonding film-attached die bonding film side to form a modified region on a division planned line of the semiconductor wafer; and
A step C of forming a semiconductor chip by applying tensile tension to the die bond film with the dicing sheet to break the semiconductor wafer and the die bond film constituting the die bond film with the dicing sheet at the division line. A method for manufacturing a semiconductor device. Step A-1 for attaching a back grind tape to the surface of the semiconductor wafer;
Step A-2 for performing back surface grinding of the semiconductor wafer under the holding of the back grind tape,
9. The method of manufacturing a semiconductor device according to claim 8 , wherein the steps A to C are performed after the steps A-1 and A-2. After the step B, it has a step B-1 for peeling the back grind tape from the semiconductor wafer,
The method of manufacturing a semiconductor device according to claim 9 , wherein the step C is performed after the step B-1.

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