JP2017183705A - Dicing die bonding film, and method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dicing die bonding film capable of suppressing a die bonding film from floating from a dicing sheet during a cool expanding process, and also capable of appropriately separating a semiconductor chip with a die bonding film from a dicing sheet during a pickup process.SOLUTION: A dicing die bonding film includes a dicing sheet and a die bonding film laminated on the dicing sheet. The peel force A between the dicing sheet and the die bonding film at 23°C is within a range of 0.1 N/20 mm or more and 0.25 N/20 mm or less, and the peel force B between the dicing sheet and the die bonding film at -15°C is within a range of 0.15 N/20 mm or more and 0.5 N/20 mm or less under the following measurement condition of the peel force B. The die bonding film is used while being broken by applying a tensile tension thereon.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a dicing die-bonding film and a method for manufacturing a semiconductor device.

  Conventionally, dicing die-bonding films are sometimes used in the manufacture of semiconductor devices. A dicing die-bonding film is a dicing sheet provided with a die-bonding film so as to be peelable. In manufacturing a semiconductor device, a semiconductor wafer is held on a die bond film of a dicing die bond film, and the semiconductor wafer is diced into individual chips. Thereafter, the chip is peeled off from the dicing sheet together with the die bond film, and fixed to an adherend such as a lead frame through the die bond film.

  When using a dicing die bond film in which a die bond film is laminated on a dicing sheet and dicing a semiconductor wafer while holding the die bond film, it is necessary to cut the die bond film simultaneously with the semiconductor wafer. However, in a general dicing method using a diamond blade, adhesion between the die bond film and the dicing sheet due to the influence of heat generated during dicing, adhesion of semiconductor chips due to generation of cutting debris, cutting debris on the side surface of the semiconductor chip Therefore, it is necessary to slow down the cutting speed, which increases the cost.

  Therefore, in recent years, by forming a modified region by irradiating a laser beam to a division line on a semiconductor wafer, the semiconductor wafer can be easily divided on the division line, and then the semiconductor wafer is formed into a dicing die bond film. Then, by dicing the dicing die bond film at a low temperature (for example, −15 ° C. to 5 ° C.) (hereinafter also referred to as “cool expand”), the semiconductor wafer and the die bond film are ruptured. A method for obtaining a semiconductor chip (a semiconductor chip with a die bond film) has been proposed (see, for example, Patent Document 1). This is a so-called stealth dicing (registered trademark) method.

JP 2009-164556 A

  However, in the conventional stealth dicing, there is a problem that the semiconductor chip with the die bond film may be peeled off from the dicing sheet before the pickup is performed after the cool expand. On the other hand, there was a problem that the chip could not be peeled off from the dicing sheet at the time of picking up, and it could not be picked up suitably.

As a result of intensive studies on these problems, the inventors of the present invention have a low temperature condition, so that the peel force between the dicing sheet and the die bond film is low, and the die bond film is lifted off the dicing sheet. In some cases, it was found that the semiconductor chip with the die-bonding film might be peeled off from the dicing sheet before picking up.
On the other hand, the pickup is performed at room temperature (for example, 23 ° C.). Therefore, when a dicing die-bonding film having a relatively high peeling force between the dicing sheet and the die-bonding film is used even at a low temperature, it is preferable that the peeling force becomes too high at the time of pickup. The present inventors have found out that pickup may not be possible.

The present invention has been made in view of the above problems, and its purpose is to prevent the die bond film from floating from the dicing sheet in the cool expanding process, and to provide a semiconductor chip with a die bond film from the dicing sheet in the pickup process. An object of the present invention is to provide a dicing die-bonding film that can be suitably peeled.
Moreover, it is providing the manufacturing method of the semiconductor device using the said dicing die-bonding film.

  The present inventors examined dicing die-bonding films in order to solve the above problems. As a result, by adopting a dicing die-bonding film having the following configuration, the die-bonding film can be prevented from floating from the dicing sheet in the cool expanding process, and the semiconductor chip with the die-bonding film can be suitably peeled from the dicing sheet in the pick-up process. As a result, the present invention has been completed.

That is, the dicing die bond film according to the present invention is
Dicing sheet,
Having a die bond film laminated on the dicing sheet,
The peeling force A at 23 ° C. between the dicing sheet and the die bond film is within the range of 0.1 N / 20 mm or more and 0.25 N / 20 mm or less under the measurement conditions of the following peeling force A,
The peel force B at −15 ° C. between the dicing sheet and the die bond film is within the range of 0.15 N / 20 mm or more and 0.5 N / 20 mm or less under the measurement conditions of the following peel force B,
The die bond film is used by being broken by applying a tensile tension.
<Measurement conditions for peel force A>
T-type peel test Peeling speed 300 mm / min <Measurement conditions for peel force B>
T-type peel test Peeling speed 300 mm / min.

  According to the above configuration, since the peeling force A is within a range of 0.1 N / 20 mm or more and 0.25 N / 20 mm or less under the measurement condition of the peeling force A, the die bonding sheet is attached to the die in the pickup process. The semiconductor chip can be suitably peeled off. In addition, since the peeling force B is within the range of 0.15 N / 20 mm or more and 0.5 N / 20 mm or less under the measurement condition of the peeling force B, the die bond film floats from the dicing sheet in the cool expanding step. Can be suppressed.

In addition, a method for manufacturing a semiconductor device according to the present invention includes:
Step A for attaching a semiconductor wafer to a dicing die bond film;
Expanding the dicing die bond film under the condition of 0 ° C. or less, breaking the die bond film at least, and obtaining a chip with a die bond film; and
And C for picking up the chip with the die bond film,
The dicing die bond film is
Dicing sheet,
Having a die bond film laminated on the dicing sheet,
The peeling force A at 23 ° C. between the dicing sheet and the die bond film is within the range of 0.1 N / 20 mm or more and 0.25 N / 20 mm or less under the measurement conditions of the following peeling force A,
The peel force B at −15 ° C. between the dicing sheet and the die bond film is within the range of 0.15 N / 20 mm or more and 0.5 N / 20 mm or less under the following peel force B measurement conditions. To do.
<Measurement conditions for peel force A>
T-type peel test Peeling speed 300 mm / min <Measurement conditions for peel force B>
T-type peel test Peeling speed 300 mm / min.

According to the above configuration, since the peeling force A is within a range of 0.1 N / 20 mm or more and 0.25 N / 20 mm or less under the measurement condition of the peeling force A, the dicing sheet is used in the process C (pickup process). Thus, the semiconductor chip with a die bond film can be suitably peeled off. Further, since the peeling force B is within the range of 0.15 N / 20 mm or more and 0.5 N / 20 mm or less under the measurement condition of the peeling force B, the die bond film is a dicing sheet in the process B (cool expanding process). Can be prevented from floating.
In addition, in the manufacturing method of the semiconductor device which concerns on this invention, the case where a semiconductor wafer and a die-bonding film are fractured | ruptured simultaneously in a cool expanding process and the case where only a die-bonding film are fractured | ruptured in a cool expanding process are included.

  ADVANTAGE OF THE INVENTION According to this invention, the dicing die-bonding film which can suppress that a die-bonding film floats from a dicing sheet in a cool expansion process, and can peel a semiconductor chip with a die-bonding film suitably from a dicing sheet in a pick-up process is provided. can do. Moreover, the manufacturing method of the semiconductor device using the said dicing die-bonding film can be provided.

It is a cross-sectional schematic diagram which shows the dicing die-bonding film which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment. (A), (b) is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment. (A) And (b) is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on other embodiment. It is a cross-sectional schematic diagram for demonstrating the other manufacturing method of the semiconductor device which concerns on other embodiment.

(Dicing die bond film)
A dicing die bond film according to an embodiment of the present invention will be described below. FIG. 1 is a schematic cross-sectional view showing a dicing die-bonding film according to an embodiment of the present invention.

  As shown in FIG. 1, the dicing die bond film 10 has a configuration in which a die bond film 3 is laminated on a dicing sheet 11. The dicing sheet 11 has a configuration in which the pressure-sensitive adhesive layer 2 is laminated on the substrate 1. The die bond film 3 is provided on the pressure-sensitive adhesive layer 2.

  In addition, although this embodiment demonstrates the case where the part 2b which is not covered with the die-bonding film 3 exists in the dicing sheet 11, the dicing die-bonding film which concerns on this invention is not limited to this example, A dicing sheet A die bond film may be laminated on the dicing sheet so as to cover the whole.

The peeling force A at 23 ° C. between the dicing sheet 11 and the die bond film 3 is within a range of 0.1 N / 20 mm or more and 0.25 N / 20 mm or less, preferably 0 Within the range of 12 N / 20 mm or more and 0.23 N / 20 mm or less, and more preferably within the range of 0.14 N / 20 mm or more and 0.22 N / 20 mm or less.
<Measurement conditions for peel force A>
T-type peel test Peeling speed 300mm / min

  Since the peeling force A is within a range of 0.1 N / 20 mm or more and 0.25 N / 20 mm or less under the measurement condition of the peeling force A, the semiconductor chip 5 with the die bond film 3 (from the dicing sheet 11 in the pickup process) It becomes possible to peel off suitably (refer FIG.4 (b)).

The peeling force B at −15 ° C. between the dicing sheet 11 and the die bond film 3 is within the range of 0.15 N / 20 mm or more and 0.5 N / 20 mm or less under the following measurement conditions of the peeling force B, preferably It is in the range of 0.20 N / 20 mm or more and 0.45 N / 20 mm or less, and more preferably in the range of 0.24 N / 20 mm or more and 0.40 N / 20 mm or less.
<Measurement conditions for peel force B>
T-type peel test Peeling speed 300mm / min

  Since the peeling force B is within the range of 0.15 N / 20 mm or more and 0.5 N / 20 mm or less under the measurement condition of the peeling force B, the die bond film 3 is lifted from the dicing sheet 11 in the cool expanding step. Can be suppressed.

  The peeling force B is preferably larger than the peeling force A. When the peeling force B is larger than the peeling force A, the die bond film 3 can be further prevented from floating from the dicing sheet 11 in the cool expanding step, and the semiconductor chip 5 with the die bond film 3 from the dicing sheet 11 in the pickup step. Can be more suitably peeled off.

  The difference between the peeling force A and the peeling force B [(peeling force B) − (peeling force A)] is preferably 0.03 N / 20 mm or more, and more preferably 0.05 N / 20 mm or more. . The difference [(peeling force B) − (peeling force A)] is preferably larger, but is, for example, 0.5 N / 20 mm or less.

  The more detailed measuring method of the peeling force A and the peeling force B is based on the method described in the examples.

(Die bond film)
The glass transition temperature (Tg) of the die bond film 3 is preferably 50 ° C. or lower, and more preferably 40 ° C. or lower. When the glass transition temperature (Tg) of the die bond film 3 is 50 ° C. or less, the difference between the peel strength at normal temperature and low temperature can be effectively obtained. Further, the glass transition temperature (Tg) of the die bond film 3 is preferably as low as possible, but is, for example, 0 ° C. or higher from the viewpoint of pickup properties.

  A more detailed method for measuring the glass transition temperature (Tg) is according to the method described in the examples.

  The tensile storage elastic modulus A at 23 ° C. of the die bond film 3 is preferably 5 MPa or more and 3000 MPa or less, and more preferably 10 MPa or more and 1000 MPa or less. When the tensile storage elastic modulus A is 5 MPa or more, it can be picked up more suitably in the pick-up process. On the other hand, when the tensile storage elastic modulus A is 3000 MPa or less, it is possible to prevent the die bond film 3 from being peeled off from the dicing sheet 11 after the cool expanding step and before the pickup step.

  The tensile storage modulus B at −15 ° C. of the die bond film 3 is preferably 1 GPa or more and 10 GPa or less, and more preferably 2 GPa or more and 5 GPa or less. When the tensile storage modulus B is 1 GPa or more, the die bond film 3 is suitably broken in the cool expanding step. On the other hand, when the tensile storage modulus B is 10 GPa or less, the die bond film 3 can be suitably prevented from floating from the dicing sheet 11 in the cool expanding step.

  The ratio of the tensile storage elastic modulus A and the tensile storage elastic modulus B [(tensile storage elastic modulus B) / (tensile storage elastic modulus A)] is preferably 2 or more, more preferably 30 or more. When the ratio [(tensile storage modulus B) / (tensile storage modulus A)] is 2 or more, the die bond film 3 can be further prevented from floating from the dicing sheet 11 in the cool expanding step, and the pickup step The semiconductor chip 5 with the die bond film 3 can be more suitably peeled from the dicing sheet 11. The ratio [(tensile storage elastic modulus B) / (tensile storage elastic modulus A)] is preferably as large as possible, but is, for example, 300 or less from the viewpoint of the balance between cleaving property and pickup property.

  A more detailed method for measuring the tensile storage elastic modulus A and the tensile storage elastic modulus B is based on the method described in the examples.

As shown in FIG. 1, the layer structure of the die-bonding film 3 includes a single-layer adhesive layer. Note that in this specification, a single layer refers to a layer having the same composition, and includes a stack of a plurality of layers having the same composition.
However, the die bond film in the present invention is not limited to this example. For example, a multilayer structure in which two or more types of adhesive layers having different compositions are laminated may be used.

  A thermosetting resin is mentioned as a material which comprises the die-bonding film 3. FIG. Moreover, you may use a thermoplastic resin and a thermosetting resin together.

  Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, thermosetting polyimide resin, and the like. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities or the like that corrode semiconductor elements is preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type. , Biphenyl type, naphthalene type, fluorene type, phenol novolak type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin, polyfunctional epoxy resin, hydantoin type, trisglycidyl isocyanurate type An epoxy resin such as a glycidylamine type is used. These can be used alone or in combination of two or more. Among these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins, and tetraphenylolethane type epoxy resins are particularly preferable. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  The phenol resin acts as a curing agent for the epoxy resin. For example, a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol novolac resin, a novolac type phenol resin such as a nonylphenol novolac resin, a resol type Examples thereof include phenol resins and polyoxystyrene such as polyparaoxystyrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per 1 equivalent of the epoxy group in the epoxy resin component. . More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

  The acrylic resin is not particularly limited, and includes one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples thereof include a polymer (acrylic copolymer) as a component. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include an ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and a dodecyl group.

  Among the acrylic resins, an acrylic copolymer is particularly preferable for the reason of improving cohesion. Examples of the acrylic copolymer include a copolymer of ethyl acrylate and methyl methacrylate, a copolymer of acrylic acid and acrylonitrile, and a copolymer of butyl acrylate and acrylonitrile.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalene sulfonic acid, and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.

  The blending ratio of the thermosetting resin is not particularly limited as long as the die bond film 3 exhibits a function as a thermosetting type when heated under predetermined conditions. It is preferably in the range of 60% by weight, and more preferably in the range of 10 to 50% by weight.

The die bond film 3 includes, among others, an epoxy resin that is liquid at 23 ° C., a phenol resin that is liquid at 23 ° C., and an acrylic resin having a glass transition temperature (Tg) of 50 ° C. or less. It is preferable that 20% by weight or more is contained with respect to the entire die bond film 3. Thereby, the peeling force of the dicing sheet 11 and the die-bonding film 3 at a low temperature can be increased.
The liquid state at 23 ° C. means that the viscosity at 23 ° C. is less than 5000 Pa · s. The viscosity refers to a value measured using a model number HAAKE Roto VISCO1 manufactured by Thermo Scientific.

  When the die-bonding film 3 of the present invention is crosslinked to some extent in advance, a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer can be added as a crosslinking agent. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  A conventionally well-known thing can be employ | adopted as said crosslinking agent. In particular, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, adducts of polyhydric alcohol and diisocyanate are more preferable. The addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it include other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.

  Moreover, a filler can be suitably mix | blended with the die-bonding film 3 according to the use. The blending of the filler enables imparting conductivity, improving thermal conductivity, adjusting the elastic modulus, and the like. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are preferable from the viewpoints of characteristics such as improvement in handleability, improvement in thermal conductivity, adjustment of melt viscosity, and imparting thixotropic properties. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whisker. , Boron nitride, crystalline silica, amorphous silica and the like. These can be used alone or in combination of two or more. From the viewpoint of improving thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable. Further, from the viewpoint that the above properties are well balanced, crystalline silica or amorphous silica is preferable. In addition, a conductive substance (conductive filler) may be used as the inorganic filler for the purpose of imparting conductivity and improving thermal conductivity. Examples of the conductive filler include metal powder in which silver, aluminum, gold, cylinder, nickel, conductive alloy and the like are made into a spherical shape, needle shape and flake shape, metal oxide such as alumina, amorphous carbon black, graphite and the like.

  The average particle size of the filler is preferably 0.005 to 10 μm, and more preferably 0.005 to 1 μm. This is because when the average particle size of the filler is 0.005 μm or more, the wettability to the adherend and the adhesiveness can be improved. Moreover, by setting it as 10 micrometers or less, while being able to make the effect of the filler added for provision of said each characteristic sufficient, heat resistance can be ensured. In addition, the average particle diameter of a filler is the value calculated | required, for example with the photometric type particle size distribution analyzer (The product made from HORIBA, apparatus name; LA-910).

  In addition to the said filler, another additive can be suitably mix | blended with the die-bonding film 3 as needed. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  The thickness of the die bond film 3 (total thickness in the case of a laminate) is not particularly limited, but can be selected, for example, from a range of 1 to 200 μm, preferably 5 to 100 μm, more preferably 10 to 80 μm. .

(Dicing sheet)
The dicing sheet 11 according to the present embodiment has a configuration in which the pressure-sensitive adhesive layer 2 is laminated on the substrate 1. However, the dicing sheet in the present invention is not limited to this example as long as the die bond film 3 can be fixed when the die bond film 3 is broken into pieces in the cool expanding step. For example, another layer may exist between the base material and the pressure-sensitive adhesive layer.

(Base material)
The base material 1 is preferably one having ultraviolet transparency, and serves as a strength matrix of the dicing die bond film 10. For example, polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfur De, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, and the like.

  Moreover, as a material of the base material 1, polymers, such as the crosslinked body of the said resin, are mentioned. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary. According to the resin sheet to which heat shrinkability is imparted by stretching treatment or the like, the semiconductor chip 5 with the die bond film 3 is made by heat shrinking (heat expanding) the outer peripheral portion of the semiconductor wafer of the base material 1 after the cool expansion. It is possible to facilitate the recovery of the semiconductor chip 5 by widening the interval.

  The surface of the substrate 1 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed. As the substrate 1, the same kind or different kinds can be appropriately selected and used, and if necessary, a blend of several kinds can be used. Moreover, in order to provide the base material 1 with an antistatic ability, a conductive material vapor deposition layer having a thickness of about 30 to 500 mm and made of a metal, an alloy, or an oxide thereof is provided on the base material 1. it can. The substrate 1 may be a single layer or two or more types.

  The base material 1 has a tensile strength at −15 ° C. and an elongation of 100%, preferably 10 N / 10 mm or more, and more preferably 12 N / 10 mm or more. When the tensile strength at −15 ° C. and elongation of 100% of the substrate 1 is 10 N / 10 mm or more, the cleaving force is effectively transmitted to the wafer portion, and uniform cleaving is achieved.

  The thickness of the substrate 1 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 μm.

    (Adhesive layer)

  The tensile storage modulus A at 23 ° C. of the pressure-sensitive adhesive layer 2 is preferably 1 MPa or more and 100 MPa or less, and more preferably 2 MPa or more and 30 MPa or less. When the tensile storage modulus A is 1 MPa or more, the chip with the die-bonding film 3 can be more suitably picked up in the pick-up process. On the other hand, when the tensile storage elastic modulus A is 100 MPa or less, it is possible to prevent the die bond film 3 from being peeled off from the dicing sheet 11 after the cool expanding step and before the pickup step.

  The tensile storage elastic modulus B at −15 ° C. of the pressure-sensitive adhesive layer 2 is preferably 5 MPa or more and 500 MPa or less, and more preferably 10 MPa or more and 200 MPa or less. When the tensile storage elastic modulus B is 5 MPa or more, the cleaving force can be efficiently transmitted to the adhesive film during cleaving. On the other hand, when the tensile storage elastic modulus B is 500 MPa or less, the die bond film 3 can be suitably prevented from floating from the dicing sheet 11 in the cool expanding step.

  The ratio of the tensile storage elastic modulus A to the tensile storage elastic modulus B [(tensile storage elastic modulus B) / (tensile storage elastic modulus A)] is preferably 2 or more, more preferably 4 or more. When the ratio [(tensile storage modulus B) / (tensile storage modulus A)] is 2 or more, the die bond film 3 can be further prevented from floating from the dicing sheet 11 in the cool expanding step, and the pickup step The semiconductor chip 5 with the die bond film 3 can be more suitably peeled from the dicing sheet 11. The ratio [(tensile storage elastic modulus B) / (tensile storage elastic modulus A)] is preferably as large as possible, but it is, for example, 100 or less from the viewpoint of the balance between pickup and cleaving property.

  A more detailed method for measuring the tensile storage elastic modulus A and the tensile storage elastic modulus B is based on the method described in the examples.

  It does not restrict | limit especially as an adhesive used for formation of the adhesive layer 2, For example, common pressure sensitive adhesives, such as an acrylic adhesive and a rubber adhesive, can be used. The pressure-sensitive adhesive is an acrylic pressure-sensitive adhesive based on an acrylic polymer from the standpoint of cleanability with an organic solvent such as ultrapure water or alcohol for electronic components that are resistant to contamination such as semiconductor wafers and glass. Is preferred.

  Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters, etc.) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. You may go out. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization, if necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

  In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight with respect to 100 parts by weight of the base polymer. Furthermore, you may use additives, such as conventionally well-known various tackifier and anti-aging agent, other than the said component as needed to an adhesive.

The pressure-sensitive adhesive layer 2 may be formed of a radiation curable pressure-sensitive adhesive. When an ultraviolet ray is irradiated in a state where the die bond film 3 is bonded, an anchor effect can be generated between the die bond film 3 and the die bond film 3. Thereby, the adhesiveness of the adhesive layer 2 and the die-bonding film 3 at low temperature (for example, -15 degreeC) can be improved.
In addition, the adhesiveness by an anchor effect becomes high, so that it is low temperature. Even at room temperature (for example, 23 ° C.), there is an anchor effect, but at room temperature, adhesion due to the anchor effect is not exhibited as compared with a low temperature. As a result, it is possible to reduce the peeling force A while suitably increasing the peeling force B.

  As the radiation-curable pressure-sensitive adhesive, those having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. As the radiation curable pressure sensitive adhesive, for example, an addition type radiation curable pressure sensitive adhesive in which a radiation curable monomer component or an oligomer component is blended with a general pressure sensitive pressure sensitive adhesive such as an acrylic pressure sensitive adhesive or a rubber pressure sensitive adhesive. An agent can be illustrated.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight in the range of about 100 to 30,000 are suitable. The compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type radiation curable adhesive described above, the radiation curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain or main chain or at the main chain terminal as a base polymer. Intrinsic radiation curable pressure sensitive adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so they are stable without the oligomer components moving through the adhesive over time. It is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted, but it is easy in terms of molecular design to introduce the carbon-carbon double bond into the polymer side chain. It is. For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the intrinsic radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfonyl Black Aromatic sulfonyl chloride compounds such as 1; photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  Examples of radiation curable pressure-sensitive adhesives include photopolymerizable compounds such as addition polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having an epoxy group disclosed in JP-A-60-196956. And a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive containing a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and an onium salt-based compound.

  The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably from the viewpoints of chipping prevention of the chip cut surface and compatibility of fixing and holding the die bond film 3. Is 5 to 25 μm.

  The die bond film 3 of the dicing die bond film 10 is preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the die bond film 3 until it is put into practical use. Further, the separator can be used as a support base material when the die bond film 3 is transferred to the pressure-sensitive adhesive layer 2. The separator is peeled off when a workpiece is stuck on the die bond film 3 of the dicing die bond film. As the separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.

The dicing die bond film 10 according to the present embodiment is produced as follows, for example.
First, the base material 1 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, after a pressure-sensitive adhesive composition solution is applied onto the substrate 1 to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinked as necessary) to form a precursor layer. . It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 80 to 150 ° C. and the drying time is 0.5 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, the coating film may be dried on the said drying conditions, and the said precursor layer may be formed. Then, the said precursor layer is bonded together on a base material 1 with a separator. Thereby, a dicing sheet precursor is produced.

The die bond film 3 is produced as follows, for example.
First, an adhesive composition solution that is a material for forming the die bond film 3 is prepared. As described above, the adhesive composition solution contains the adhesive composition, filler, and other various additives.

  Next, the adhesive composition solution is applied on the base separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried under a predetermined condition to form the die bond film 3. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 70 to 160 ° C. and the drying time is 1 to 5 minutes. Moreover, after apply | coating an adhesive composition solution on a separator and forming a coating film, the coating film may be dried on the said drying conditions, and the die-bonding film 3 may be formed. Then, the die bond film 3 is bonded together with a separator on a base material separator.

  Subsequently, the separator is peeled off from each of the dicing sheet precursor and the die bond film 3, and the die bond film 3 and the pressure-sensitive adhesive layer are bonded to each other so as to be a bonding surface. Bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and is preferably 30 to 50 ° C., for example, and more preferably 35 to 45 ° C. Moreover, a linear pressure is not specifically limited, For example, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable. Then, you may irradiate an ultraviolet-ray from the base material 1 side. As an irradiation amount of ultraviolet rays, an amount in which the peeling force A and the peeling force B are within the numerical range is preferable. Although the specific irradiation amount of an ultraviolet-ray changes according to a composition, thickness, etc. of an adhesive layer, 50mJ-500mJ are preferable, for example, and 100mJ-300mJ are more preferable. As described above, the dicing die-bonding film according to the present embodiment is obtained.

(Method for manufacturing semiconductor device)
Next, a method for manufacturing a semiconductor device using the dicing die bond film 10 will be described with reference to FIGS. 2 to 5 are schematic cross-sectional views for explaining a method for manufacturing a semiconductor device according to this embodiment. First, the modified region is formed on the division line 4L by irradiating the division line 4L of the semiconductor wafer 4 with laser light. This method is a method of aligning a condensing point inside a semiconductor wafer, irradiating a laser beam along a grid-like division planned line, and forming a modified region inside the semiconductor wafer by ablation by multiphoton absorption. . What is necessary is just to adjust suitably within the range of the following conditions as laser beam irradiation conditions.
<Laser irradiation conditions>
(A) Laser light
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross-sectional area 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse
Repeat frequency 100 kHz or less
Pulse width 1μs or less
Output 1mJ or less
Laser light quality TEM00
Polarization characteristics Linearly polarized (B) condensing lens
Magnification 100 times or less
NA 0.55
Transmittance with respect to laser beam wavelength: 100% or less (C) Moving speed of placing table on which semiconductor substrate is placed 280 mm / sec or less Note that a method of forming a modified region on the planned division line 4L by irradiating laser beam Is described in detail in Japanese Patent No. 3408805 and Japanese Patent Application Laid-Open No. 2003-338567, and detailed description thereof will be omitted here.

  Next, as shown in FIG. 3, the semiconductor wafer 4 after the modified region is formed is pressure-bonded on the die bond film 3, and this is bonded and held (fixing step). This step is performed while pressing with a pressing means such as a pressure roll. The attaching temperature at the time of mounting is not particularly limited, but is preferably in the range of 40 to 80 ° C. This is because warping of the semiconductor wafer 4 can be effectively prevented and the influence of expansion and contraction of the dicing die bond film can be reduced.

  Next, by applying tensile tension to the dicing die-bonding film 10, the semiconductor wafer 4 and the die-bonding film 3 are broken at the division line 4L to form the semiconductor chip 5 (cool expanding step). In this step, for example, a commercially available wafer expansion device can be used. Specifically, as shown in FIG. 4A, a dicing ring 31 is attached to the periphery of the pressure-sensitive adhesive layer 2 of the dicing die-bonding film 10 to which the semiconductor wafer 4 is bonded, and then fixed to the wafer expansion device 32. To do. Next, as shown in FIG. 4B, the push-up portion 33 is raised to apply tension to the dicing die-bonding film 12.

  The cool expanding step is preferably performed under a condition of 0 to -15 ° C, and more preferably performed under a condition of -5 to -15 ° C. Since the said cool expanding process is performed on the conditions of 0-15 degreeC, the die-bonding film 3 can be fractured | ruptured suitably.

  Moreover, in the said cool expanding process, it is preferable that an expanding speed (speed which a pushing-up part raises) is 100-400 mm / sec, it is more preferable that it is 100-350 mm / sec, and it is 100-300 mm / sec. Is more preferable. If the expanding speed is 100 mm / second or more, the semiconductor wafer 4 and the die bond film 3 can be easily broken at substantially the same time. Moreover, if the expanding speed is 400 mm / second or less, the dicing sheet 11 can be prevented from breaking.

  Moreover, in the said cool expanding process, it is preferable that the amount of expands is 4-16 mm of expand amounts. The amount of expand can be adjusted as appropriate within the numerical range according to the chip size to be formed. If the amount of expansion is 4 mm or more, the semiconductor wafer 4 and the die bond film 3 can be more easily broken. Moreover, if the expand amount is 16 mm or less, the dicing sheet 11 can be further prevented from breaking.

  In this way, by applying tensile tension to the dicing die bond film 10, cracks are generated in the thickness direction of the semiconductor wafer 4 starting from the modified region of the semiconductor wafer 4, and the die bond film 3 in close contact with the semiconductor wafer 4 is formed. The semiconductor chip 5 with the die bond film 3 can be obtained.

  Next, a heat expanding process is performed as needed. In the heat expanding step, the outer side of the dicing sheet 11 where the semiconductor wafer 4 is attached is heated and thermally contracted. Thereby, the interval between the semiconductor chips 5 is increased. The conditions in the heat expanding step are not particularly limited, but it is preferable that the expansion amount is 4 to 16 mm, the heat temperature is 200 to 260 ° C., the heat distance is 2 to 30 mm, and the rotation speed is 3 ° / sec to 10 ° / sec. .

  Next, a cleaning process is performed as necessary. In the cleaning process, the dicing sheet 11 in a state where the semiconductor chip 5 with the die bond film 3 is fixed is set on a spin coater. Next, the spin coater is rotated while dripping the cleaning liquid onto the semiconductor chip 5. Thereby, the surface of the semiconductor chip 5 is cleaned. An example of the cleaning liquid is water. The rotation speed and rotation time of the spin coater vary depending on the type of the cleaning liquid, but can be set to, for example, a rotation speed of 400 to 3000 rpm and a rotation time of 1 to 5 minutes.

  Next, the semiconductor chip 5 is picked up in order to peel off the semiconductor chip 5 adhered and fixed to the dicing die bond film 10 (pickup process). The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up the individual semiconductor chips 5 from the dicing die bond film 10 side with a needle and picking up the pushed-up semiconductor chips 5 with a pick-up device may be mentioned.

  Next, as shown in FIG. 5, the picked-up semiconductor chip 5 is die-bonded to the adherend 6 through the die-bonding film 3 (temporary fixing step). Examples of the adherend 6 include a lead frame, a TAB film, a substrate, and a separately manufactured semiconductor chip. The adherend 6 may be, for example, a deformable adherend that can be easily deformed or a non-deformable adherend (such as a semiconductor wafer) that is difficult to deform.

  A conventionally well-known thing can be used as said board | substrate. As the lead frame, a metal lead frame such as a Cu lead frame or a 42 Alloy lead frame, or an organic substrate made of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. However, the present invention is not limited to this, and includes a circuit board that can be used by bonding and fixing a semiconductor element and electrically connecting the semiconductor element.

  The shear adhesive strength at 25 ° C. at the time of temporary fixing of the die bond film 3 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 6. When the shear bond strength of the die bond film 3 is at least 0.2 MPa or more, the die bond film 3 and the semiconductor chip 5 or the adherend 6 are bonded by ultrasonic vibration or heating in the wire bonding process. Less shear deformation occurs on the adhesive surface. That is, the semiconductor element is less likely to move due to ultrasonic vibration during wire bonding, thereby preventing the success rate of wire bonding from decreasing. Moreover, it is preferable that the shear adhesive force at 175 degreeC at the time of temporary adhering of the die-bonding film 3 is 0.01 Mpa or more with respect to the to-be-adhered body 6, More preferably, it is 0.01-5 Mpa.

  Next, wire bonding is performed in which the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 are electrically connected by the bonding wire 7 (wire bonding step). As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire or the like is used. The temperature at the time of wire bonding is 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is several seconds to several minutes. The connection is performed by a combination of vibration energy by ultrasonic waves and crimping energy by applying pressure while being heated so as to be within the temperature range. This step can be performed without thermosetting the die bond film 3. Further, the semiconductor chip 5 and the adherend 6 are not fixed by the die bond film 3 in the process of this step.

  Next, the semiconductor chip 5 is sealed with the sealing resin 8 (sealing step). This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. Although the heating temperature at the time of resin sealing is normally performed at 175 degreeC for 60 to 90 second, this invention is not limited to this, For example, it can cure at 165 to 185 degreeC for several minutes. Thereby, the sealing resin is cured, and the semiconductor chip 5 and the adherend 6 are fixed through the die bond film 3. That is, in the present invention, even when the post-curing step described later is not performed, the die bonding film 3 can be fixed in this step, and the number of manufacturing steps can be reduced and the semiconductor device manufacturing period can be reduced. It can contribute to shortening.

  In the post-curing step, the sealing resin 8 that is insufficiently cured in the sealing step is completely cured. Even if the die bond film 3 is not completely thermoset in the sealing step, the die bond film 3 can be completely thermoset together with the sealing resin 8 in this step. Although the heating temperature in this process changes with kinds of sealing resin, it exists in the range of 165-185 degreeC, for example, and heating time is about 0.5 to 8 hours.

  In the above-described embodiment, the case where the wire bonding step is performed without temporarily curing the die bond film 3 after the semiconductor chip 5 with the die bond film 3 is temporarily fixed to the adherend 6 has been described. However, in the present invention, after temporarily attaching the semiconductor chip 5 with the die bond film 3 to the adherend 6, the die bond film 3 is thermally cured, and then a normal die bonding process is performed in which a wire bonding process is performed. Also good.

  In addition, the dicing die-bonding film of the present invention can be suitably used also when three-dimensional mounting is performed by stacking a plurality of semiconductor chips. At this time, the die bond film and the spacer may be laminated between the semiconductor chips, or only the die bond film may be laminated between the semiconductor chips without laminating the spacers. Is possible.

  Next, a method for manufacturing a semiconductor device that employs a process of forming grooves on the surface of a semiconductor wafer and then performing backside grinding will be described below.

  6 and 7 are schematic cross-sectional views for explaining another method for manufacturing the semiconductor device according to the present embodiment. First, as shown in FIG. 6A, a groove 4 </ b> S that does not reach the back surface 4 </ b> R is formed on the front surface 4 </ b> F of the semiconductor wafer 4 by the rotating blade 41. When forming the grooves 4S, the semiconductor wafer 4 is supported by a support base (not shown). The depth of the groove 4S can be appropriately set according to the thickness of the semiconductor wafer 4 and the expanding conditions. Next, as shown in FIG. 6B, the semiconductor wafer 4 is supported on the protective base material 42 so that the surface 4F comes into contact therewith. Thereafter, back grinding is performed with the grinding wheel 45 to expose the groove 4S from the back surface 4R. In addition, a conventionally well-known sticking apparatus can be used for affixing the protective base material 42 to a semiconductor wafer, and a conventionally well-known grinding apparatus can also be used for back surface grinding.

  Next, as shown in FIG. 7, the semiconductor wafer 4 with the grooves 4 </ b> S exposed is pressure-bonded onto the dicing die-bonding film 10, and this is bonded and held (fixed step). Thereafter, the protective substrate 42 is peeled off, and tension is applied to the dicing die bond film 10 by the wafer expansion device 32. As a result, the die bond film 3 is broken to form the semiconductor chip 5 (chip forming step). Note that the temperature, the expansion speed, and the amount of expansion in the chip formation step are the same as those in the case where the modified region is formed on the division planned line 4L by irradiating the laser beam. Since the subsequent steps are the same as the case where the modified region is formed on the planned division line 4L by irradiating the laser beam, the description here will be omitted.

  The manufacturing method of the semiconductor device according to the present invention is not limited to the above-described embodiment as long as the semiconductor wafer and the die bond film are simultaneously broken in the cool expanding process or only the die bond film is broken in the cool expanding process. As another embodiment, for example, as shown in FIG. 6A, after the groove 4S that does not reach the back surface 4R is formed on the front surface 4F of the semiconductor wafer 4 by the rotating blade 41, the groove 4S is formed on the dicing die bond film. The semiconductor wafer 4 exposed is pressed and fixed by adhering and holding it (temporary fixing step). Thereafter, tension is applied to the dicing die-bonding film by the wafer expansion device. Thus, the semiconductor wafer 4 and the die bond film 3 may be broken at the groove 4S portion to form the semiconductor chip 5.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to a following example, unless the summary is exceeded. In each example, all parts are based on weight unless otherwise specified.

Example 1
<Production of dicing sheet>
In a reaction vessel equipped with a cooling pipe, a nitrogen introduction pipe, a thermometer, and a stirring device, 100 parts of 2-ethylhexyl acrylate (hereinafter also referred to as “2EHA”), 2-hydroxyethyl acrylate (hereinafter referred to as “HEA”). 19 parts, 0.4 parts of benzoyl peroxide and 80 parts of toluene were added, and polymerized in a nitrogen stream at 60 ° C. for 10 hours to obtain an acrylic polymer A.
To this acrylic polymer A, 1.2 parts of 2-methacryloyloxyethyl isocyanate (hereinafter also referred to as “MOI”) was added and subjected to an addition reaction treatment in an air stream at 50 ° C. for 60 hours to obtain an acrylic polymer A ′. Got.
Next, with respect to 100 parts of acrylic polymer A ′, 1.3 parts of a polyisocyanate compound (trade name “Coronate L”, manufactured by Nippon Polyurethane Co., Ltd.) and a photopolymerization initiator (trade name “Irgacure 184”), 3 parts of Ciba Specialty Chemicals Co., Ltd.) was added to prepare an adhesive solution (also referred to as “adhesive solution A”).
The pressure-sensitive adhesive solution A prepared above was applied onto the silicone-treated surface of the PET release liner, and dried by heating at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer A having a thickness of 10 μm. Next, a 115 μm thick Gunze EVA film (ethylene / vinyl acetate copolymer film) was bonded to the exposed surface of the pressure-sensitive adhesive layer A, and stored at 23 ° C. for 72 hours to obtain a dicing sheet A.

<Production of die bond film>
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution A having a solid content concentration of 20% by weight.
(A) Acrylic resin (trade name “SG-708-6” manufactured by Nagase ChemteX Corporation, glass transition temperature (Tg): 4 ° C.): 100 parts (b) epoxy resin (trade name “JER828” manufactured by Mitsubishi Chemical Corporation, 11 parts (c) phenolic resin (trade name “MEH-7851ss” manufactured by Meiwa Kasei Co., Ltd., solid at 23 ° C.): 5 parts (d) spherical silica (trade name “SO-25R” AD Matex): 110 parts

  The adhesive composition solution A was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. As a result, a die bond film A having a thickness (average thickness) of 10 μm was obtained.

<Production of dicing die bond film>
The PET release liner was peeled from the dicing sheet A, and the die bond film A was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for pasting. Next, 300 mJ ultraviolet rays were irradiated from the dicing sheet side. The dicing die-bonding film A was obtained by the above.

(Example 2)
<Production of die bond film>
The following (a) to (e) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution B having a solid concentration of 20% by weight.
(A) Acrylic resin (trade name “SG-708-6” manufactured by Nagase ChemteX Corporation, glass transition temperature (Tg): 4 ° C.): 100 parts (b) epoxy resin (trade name “JER1010” manufactured by Mitsubishi Chemical Corporation, (Solid) at 23 ° C.): 140 parts (c) epoxy resin (trade name “JER828” manufactured by Mitsubishi Chemical Co., Ltd., liquid at 23 ° C.): 60 parts (d) phenol resin (trade name “MEH-7851ss” manufactured by Meiwa Kasei Co., Ltd.) Solid at 23 ° C.): 100 parts (e) Spherical silica (trade name “SO-25R” manufactured by Admatechs Co., Ltd.): 40 parts

  The adhesive composition solution B was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. As a result, a die bond film B having a thickness (average thickness) of 10 μm was obtained.

<Production of dicing die bond film>
The same dicing sheet A used in Example 1 was prepared. Next, the PET release liner was peeled from the dicing sheet A, and the die bond film B was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for pasting. Next, 300 mJ ultraviolet rays were irradiated from the dicing sheet side. The dicing die-bonding film B was obtained by the above.

(Example 3)
<Production of die bond film>
The following (a) to (e) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution C having a solid concentration of 20% by weight.
(A) Acrylic resin (trade name “SG-70L” manufactured by Nagase ChemteX Corporation, glass transition temperature (Tg): −13 ° C.): 100 parts (b) epoxy resin (trade name “JER1010” manufactured by Mitsubishi Chemical Corporation, 23 (Solid) at 140 ° C .: 140 parts (c) epoxy resin (trade name “JER828” manufactured by Mitsubishi Chemical Co., Ltd., liquid at 23 ° C.): 60 parts (d) phenol resin (trade name “MEH-7851ss” manufactured by Meiwa Kasei Co., Ltd., 23 (Solid) at 100 ° C.) 100 parts (e) spherical silica (trade name “SO-25R” manufactured by Admatechs Co., Ltd.): 100 parts

  The adhesive composition solution C was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. As a result, a die bond film C having a thickness (average thickness) of 10 μm was obtained.

<Production of dicing die bond film>
The same dicing sheet A used in Example 1 was prepared. Next, the PET release liner was peeled from the dicing sheet A, and the die bond film C was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for pasting. Next, 300 mJ ultraviolet rays were irradiated from the dicing sheet side. The dicing die-bonding film C was obtained by the above.

Example 4
<Production of dicing die bond film>
The same dicing sheet A used in Example 1 was prepared. Moreover, the same thing as the die-bonding film A used in Example 1 was prepared. Next, the PET release liner was peeled from the dicing sheet A, and the die bond film A was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for pasting. Next, 40 mJ ultraviolet rays were irradiated from the dicing sheet side. The dicing die bond film D was obtained by the above.

(Example 5)
<Production of dicing die bond film>
The same dicing sheet A used in Example 1 was prepared. Moreover, the same thing as the die-bonding film A used in Example 1 was prepared. Next, the PET release liner was peeled from the dicing sheet A, and the die bond film A was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for pasting. Next, 80 mJ ultraviolet rays were irradiated from the dicing sheet side. Thus, a dicing die bond film E was obtained.

(Example 6)
<Production of dicing sheet>
The pressure-sensitive adhesive solution A prepared in the same manner as in Example 1 was applied onto the silicone-treated surface of the PET release liner and dried by heating at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer A having a thickness of 10 μm. . Next, a 100 μm-thick polyvinyl chloride film (manufactured by Achilles, product name: V-9KN) was bonded to the exposed surface of the adhesive layer A, and stored at 23 ° C. for 72 hours to obtain a dicing sheet C. .
<Production of dicing die bond film>
The same one as the die bond film A used in Example 1 was prepared. Next, the PET release liner was peeled from the dicing sheet C, and the die bond film A was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for pasting. Next, 300 mJ ultraviolet rays were irradiated from the dicing sheet side. Thus, a dicing die bond film I was obtained.

(Comparative Example 1)
<Production of dicing sheet>
The pressure-sensitive adhesive solution A prepared in the same manner as in Example 1 was applied onto the silicone-treated surface of the PET release liner and dried by heating at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer A having a thickness of 10 μm. . Next, a 115 μm thick Gunze EVA film (ethylene / vinyl acetate copolymer film) was bonded to the exposed surface of the pressure-sensitive adhesive layer A, and stored at 23 ° C. for 72 hours.
Then, 300 mJ ultraviolet rays were irradiated from the EVA film side (base material side). The dicing sheet B was obtained by the above.

<Production of dicing die bond film>
The same one as the die bond film B used in Example 2 was prepared. The PET release liner was peeled from the dicing sheet B, and the die bond film B was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for pasting. Thus, a dicing die bond film F was obtained.

(Comparative Example 2)
<Production of die bond film>
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution D having a solid concentration of 20% by weight.
(A) Acrylic resin (trade name “SG-70L” manufactured by Nagase ChemteX Corporation): 100 parts (b) Epoxy resin (trade name “JER828” manufactured by Mitsubishi Chemical Corporation): 200 parts (c) Phenol resin (trade name “ MEH-7851ss "manufactured by Meiwa Kasei Co., Ltd.) 100 parts (d) Spherical silica (trade name" SO-25R "manufactured by Admatechs Co., Ltd.): 100 parts

  The adhesive composition solution D was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thereby, a die bond film D having a thickness (average thickness) of 10 μm was obtained.

<Production of dicing die bond film>
The same dicing sheet A used in Example 1 was prepared. Next, the PET release liner was peeled from the dicing sheet A, and the die bond film D was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for pasting. Next, 300 mJ ultraviolet rays were irradiated from the dicing sheet side. Thus, a dicing die bond film G was obtained.

  (Comparative Example 3)

<Production of dicing die bond film>
The same dicing sheet A used in Example 1 was prepared. Moreover, the same thing as the die-bonding film A used in Example 1 was prepared. Next, the PET release liner was peeled from the dicing sheet A, and the die bond film A was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for pasting. Thus, a dicing die bond film H was obtained.

(Measurement of peel force between dicing sheet and die bond film)
The release treatment film was peeled from the dicing die bond film according to the example and the comparative example to expose the die bond film. Thereafter, a 50 mm wide backing tape (BT315, manufactured by Nitto Denko) was bonded to the exposed die bond film. The dicing die-bonding film was cut along the width of the backing tape of 50 mm, and the peeling force between the dicing sheet and the die-bonding film (die-bonding film on which the backing tape was bonded) was measured at a width of 50 mm. The peel force at a measurement temperature of 23 ° C. was taken as peel force A, and the peel force at a measurement temperature of −15 ° C. was taken as peel force B. Each measurement condition of peeling force A and peeling force B is as follows. The results are shown in Table 1.
<Measurement conditions for peel force A>
T-type peeling test Peeling speed 300mm / min Measuring device: SHIMADZU, AG-20KNSD
<Measurement conditions for peel force B>
T-type peel test A sample was set in an environment of −15 ° C. and measured after 2 minutes. The peel rate was 300 mm / min.
Measuring device: manufactured by SHIMADZU, triple tensile tester with constant temperature and humidity chamber

[Measurement of tensile storage modulus at −15 ° C., tensile storage modulus at 23 ° C., and glass transition temperature of die bond film]
The die-bonding films according to Examples and Comparative Examples were overlaid until the thickness became 200 μm. Next, it cut out with the cutter knife in the strip shape of length 40mm (measurement length) and width 10mm. Next, the tensile storage elastic modulus in -50-100 degreeC was measured using the solid viscoelasticity measuring apparatus (RSAIII, the product made from a rheometric scientific company). The measurement conditions were a frequency of 1 Hz, a heating rate of 10 ° C./min, and a chuck distance of 22.5 mm. The values at −15 ° C. and 23 ° C. at that time were read and used as measured values of the tensile storage modulus. The tensile storage modulus at a measurement temperature of 23 ° C. was designated as tensile storage modulus A, and the tensile storage modulus at a measurement temperature of −15 ° C. was designated as tensile storage modulus B. The results are shown in Table 1. The ratio of the tensile storage elastic modulus A to the tensile storage elastic modulus B [(tensile storage elastic modulus B) / (tensile storage elastic modulus A)] is also shown in Table 1. Further, the glass transition temperature (Tg) was obtained by calculating the value of tan δ (E ″ (loss elastic modulus) / E ′ (storage elastic modulus)).

[Measurement of tensile storage modulus at −15 ° C. and tensile storage modulus at 23 ° C. of adhesive layer]
The pressure-sensitive adhesive layers according to Examples and Comparative Examples were overlapped until the thickness became 200 μm. Next, it cut out with the cutter knife in the strip shape of length 40mm (measurement length) and width 10mm. Next, the tensile storage elastic modulus in -50-100 degreeC was measured using the solid viscoelasticity measuring apparatus (RSAIII, the product made from a rheometric scientific company). The measurement conditions were a frequency of 1 Hz, a heating rate of 10 ° C./min, and a chuck distance of 22.5 mm. The values at −15 ° C. and 23 ° C. at that time were read and used as measured values of the tensile storage modulus. The tensile storage modulus at a measurement temperature of 23 ° C. was designated as tensile storage modulus A, and the tensile storage modulus at a measurement temperature of −15 ° C. was designated as tensile storage modulus B. The results are shown in Table 1. The ratio of the tensile storage elastic modulus A to the tensile storage elastic modulus B [(tensile storage elastic modulus B) / (tensile storage elastic modulus A)] is also shown in Table 1.

[Measurement of tensile strength of substrate at −15 ° C. and elongation of 100%]
The base materials according to Examples and Comparative Examples were each cut into a width of 10 mm. Next, with respect to this sample, a tensile tester (Tensilon, manufactured by Shimadzu Corporation) was used to obtain a tensile strength at 100% elongation at −15 ° C., a chuck-to-chuck distance of 10 mm, and a pulling speed of 100 mm / min. The sample was set in an environment of −15 ° C. and then measured after 2 minutes. The results are shown in Table 1.

(Expand evaluation)
Using ML300-Integration manufactured by Tokyo Seimitsu Co., Ltd. as a laser processing device, the focusing point is aligned with the interior of a 12-inch semiconductor wafer, and laser light is irradiated along a grid (10 mm x 10 mm) division line. A modified region was formed inside the semiconductor wafer. Laser light irradiation conditions were as follows.
(A) Laser light
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross-sectional area 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse
Repetition frequency 100kHz
Pulse width 30ns
Output 20μJ / pulse
Laser light quality TEM00 40
Polarization characteristics Linearly polarized light (B) Condensing lens
50 times magnification
NA 0.55
60% transmittance for laser wavelength
(C) Moving speed of the table on which the semiconductor substrate is placed 100 mm / second

  Next, a protective tape for back grinding was bonded to the surface of the semiconductor wafer, and the back surface was ground using a disco back grinder DGP8760 so that the thickness of the semiconductor wafer was 30 μm.

  Next, the semiconductor wafer and dicing ring that had been pretreated with laser light were bonded to the dicing die-bonding films of the examples and comparative examples.

Next, a sample was obtained by cleaving the semiconductor wafer and heat shrinking the dicing sheet using a Disco separator DDS2300 manufactured by Disco Corporation. Specifically, first, the semiconductor wafer was cleaved with a cool expander unit under the conditions of an expanding temperature of −15 ° C., an expanding speed of 200 mm / second, and an expanding amount of 12 mm.
Thereafter, the dicing sheet was thermally contracted by a heat expander unit under the conditions of an expansion amount of 10 mm, a heat temperature of 250 ° C., an air volume of 40 L / min, a heat distance of 20 mm, and a rotation speed of 3 ° / sec.
The area of the part where the die bond film floats from the dicing sheet (ratio of the area of the die bond film when the area of the entire die bond film is 100%) was observed with a microscope. The case where the floating area was less than 30% was evaluated as ◯, and the case where it was 30% or more was evaluated as ×. The results are shown in Table 1.

(Evaluation of chip skip by cleaning)
Using the sample after the expansion evaluation, chip jump evaluation by cleaning was performed. Specifically, first, a dicing sheet in a state where a semiconductor chip with a die bond film was fixed was set on a spin coater. Next, the spin coater was rotated while dripping water as a cleaning solution onto the semiconductor chip. This cleaned the surface of the semiconductor chip. The rotation speed of the spin coater was 2500 rpm and the rotation time was 1 minute. Thereafter, drying was performed at 800 rpm for 1 minute. I checked if the tip was flying away. The case where all the chips remained was evaluated as ○, and the case where even one chip was lost was evaluated as ×. The results are shown in Table 1.

(Pickup evaluation)
Pickup evaluation was performed using the sample after chip fly evaluation by cleaning. Specifically, pick-up was performed under the following conditions using a die bonder SPA-300 (manufactured by Shinkawa). The evaluation was made with ○ when all could be picked up and × when there was even one chip that could not be picked up. The results are shown in Table 1.
<Pickup conditions>
Number of pins: 5
Pickup height: 500 μm
Pickup rating: 50 chips

DESCRIPTION OF SYMBOLS 1 Substrate 2 Adhesive layer 3 Die bond film 4 Semiconductor wafer 5 Semiconductor chip 6 Substrate 7 Bonding wire 8 Sealing resin 10 Dicing die bond film 11 Dicing sheet

Claims (2)

Dicing sheet,
Having a die bond film laminated on the dicing sheet,
The peeling force A at 23 ° C. between the dicing sheet and the die bond film is within the range of 0.1 N / 20 mm or more and 0.25 N / 20 mm or less under the measurement conditions of the following peeling force A,
The peel force B at −15 ° C. between the dicing sheet and the die bond film is within the range of 0.15 N / 20 mm or more and 0.5 N / 20 mm or less under the measurement conditions of the following peel force B,
The die-bonding film is used by being broken by applying a tensile tension.
<Measurement conditions for peel force A>
T-type peel test Peeling speed 300 mm / min <Measurement conditions for peel force B>
T-type peel test Peeling speed 300 mm / min. Step A for attaching a semiconductor wafer to a dicing die bond film;
Expanding the dicing die bond film under the condition of 0 ° C. or less, breaking the die bond film at least, and obtaining a chip with a die bond film; and
And C for picking up the chip with the die bond film,
The dicing die bond film is
Dicing sheet,
Having a die bond film laminated on the dicing sheet,
The peeling force A at 23 ° C. between the dicing sheet and the die bond film is within the range of 0.1 N / 20 mm or more and 0.25 N / 20 mm or less under the measurement conditions of the following peeling force A,
The peel force B at −15 ° C. between the dicing sheet and the die bond film is within the range of 0.15 N / 20 mm or more and 0.5 N / 20 mm or less under the following peel force B measurement conditions. A method for manufacturing a semiconductor device.
<Measurement conditions for peel force A>
T-type peel test Peeling speed 300 mm / min <Measurement conditions for peel force B>
T-type peel test Peeling speed 300 mm / min.

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