JP7328807B2 - Dicing tape and dicing die bond film - Google Patents

Description

The present invention relates to a dicing tape used, for example, in manufacturing semiconductor integrated circuits, and a dicing die bond film provided with the dicing tape.

2. Description of the Related Art Conventionally, a dicing die bond film used in the manufacture of semiconductor integrated circuits is known. This type of dicing die-bonding film comprises, for example, a dicing tape and a die-bonding layer laminated on the dicing tape and adhered to the wafer. The dicing tape has a base layer and an adhesive layer in contact with the die bond layer. This type of dicing die-bonding film is used in the manufacture of semiconductor integrated circuits, for example, as follows.

The method of manufacturing a semiconductor integrated circuit generally consists of a pre-process in which a circuit surface is formed on one side of a wafer using a highly integrated electronic circuit, and a post-process in which chips are cut from the wafer on which the circuit surface is formed and assembled. and
The post-process includes, for example, a mounting step in which the surface of the wafer opposite to the circuit surface is attached to a die bond layer and the wafer is fixed to the dicing tape; A dicing process in which chips (dies) are cut into small pieces, an expanding process in which the gaps between the small chips are widened, and a state in which the die bonding layer is peeled off from the adhesive layer and adhered. It has a pick-up step of taking out the chip (die) and a die-bonding step of bonding the chip (die) with the die-bonding layer attached to the adherend. A semiconductor integrated circuit is manufactured through these processes.

In the above-described manufacturing method, in the expanding step, the wafer is placed on the die bond layer overlapping the dicing tape, and the dicing tape is radially stretched under a low temperature condition of, for example, 0° C. or less to expand the wafer. Cut into small pieces together with the die bond layer. However, the dicing tape may tear as it is stretched. If the dicing tape is torn, the dicing will be defective, which will hinder the subsequent pick-up process. In order to prevent such problems, the dicing tape is required to have the ability to suppress tearing during the expansion process at a low temperature.

As a conventional dicing tape that addresses the problem in the expanding process, for example, a tape having a storage elastic modulus E' of 3 to 5 GPa at 25° C. measured at a frequency of 10 Hz is known (Patent Document 1). .
In the dicing tape described in Patent Literature 1, lifting between the die-bonding layer and the pressure-sensitive adhesive layer is suppressed during and after the expansion step at room temperature.

JP 2018-195746 A

However, it cannot be said that dicing die-bonding films and dicing tapes that are prevented from tearing during the expansion process at low temperatures have been sufficiently studied.

Accordingly, an object of the present invention is to provide a dicing tape and a dicing die-bonding film that are suppressed from tearing in an expanding process at a low temperature.

In order to solve the above problems, in the dicing tape according to the present invention, Tan δ, which is the ratio (E″/E′) of the storage elastic modulus E′ and the loss elastic modulus E″ measured by dynamic viscoelasticity measurement, The ratio (A/B) of the Tan δ value (A) at -15°C to the Tan δ value (B) at -5°C is 0.75 or more.
According to the dicing tape having the above configuration, tearing in the expansion process at a low temperature is suppressed.

The above dicing tape preferably has a strength of 15 [N/20 mm] or more at 25% tension at -15°C. As a result, it is possible to improve the splittability of the wafer in the expansion process at a low temperature.

The above dicing tape preferably comprises a substrate layer and an adhesive layer having higher adhesiveness than the substrate layer, and the thickness of the substrate layer is preferably 80 μm or more and 150 μm or less. This makes it possible to further suppress tearing in the expansion process at a low temperature.

In the above dicing tape, the adhesive layer preferably has a thickness of 5 μm or more and 40 μm or less. This makes it possible to further suppress tearing in the expansion process at a low temperature.

A dicing die-bonding film according to the present invention comprises the dicing tape described above and a die-bonding layer attached to the dicing tape.

In the above dicing die-bonding film, the die-bonding layer may have a thickness of 50 μm or more and 135 μm or less. Even with a dicing die-bonding film having such a relatively thick die-bonding layer, it is possible to prevent the dicing tape from tearing in the expansion process at a low temperature.

The dicing die-bonding film is preferably used in a cool-expanding step in which the wafer is stretched while being adhered to the die-bonding layer at 0° C. or lower, and in the cool-expanding step, the wafer is cut together with the die-bonding layer. be.

The dicing tape and the dicing die-bonding film according to the present invention have the effect of further suppressing tearing in the expansion process at a low temperature.

FIG. 2 is a cross-sectional view of the dicing die-bonding film of the present embodiment cut in the thickness direction; FIG. 4 is a cross-sectional view schematically showing a state of half-cut processing in the method of manufacturing a semiconductor integrated circuit; FIG. 4 is a cross-sectional view schematically showing a state of half-cut processing in the method of manufacturing a semiconductor integrated circuit; FIG. 4 is a cross-sectional view schematically showing a state of half-cut processing in the method of manufacturing a semiconductor integrated circuit; FIG. 4 is a cross-sectional view schematically showing a state of half-cut processing in the method of manufacturing a semiconductor integrated circuit; FIG. 4 is a cross-sectional view schematically showing a state of a mounting step in a method of manufacturing a semiconductor integrated circuit; FIG. 4 is a cross-sectional view schematically showing a state of a mounting step in a method of manufacturing a semiconductor integrated circuit; FIG. 4 is a cross-sectional view schematically showing a state of an expansion step at a low temperature in a method of manufacturing a semiconductor integrated circuit; FIG. 4 is a cross-sectional view schematically showing a state of an expansion step at a low temperature in a method of manufacturing a semiconductor integrated circuit; FIG. 4 is a cross-sectional view schematically showing a state of an expansion step at a low temperature in a method of manufacturing a semiconductor integrated circuit; FIG. 4 is a cross-sectional view schematically showing an expansion step at room temperature in the method of manufacturing a semiconductor integrated circuit; FIG. 4 is a cross-sectional view schematically showing an expansion step at room temperature in the method of manufacturing a semiconductor integrated circuit; FIG. 4 is a cross-sectional view schematically showing a pick-up process in the method of manufacturing a semiconductor integrated circuit;

An embodiment of a dicing die-bonding film and a dicing tape according to the present invention will be described below with reference to the drawings.

The dicing die-bonding film 1 of this embodiment includes a dicing tape 20 and a die-bonding layer 10 laminated on an adhesive layer 22 of the dicing tape 20 and adhered to a semiconductor wafer.

The dicing tape 20 of this embodiment is normally a long sheet, and is stored in a wound state until it is used. The dicing die-bonding film 1 of the present embodiment is stretched on an annular frame having an inner diameter slightly larger than that of the silicon wafer to be cut, and cut for use.

The dicing tape 20 of this embodiment includes a base layer 21 and an adhesive layer 22 overlaid on the base layer 21 .

In the dicing tape 20 of the present embodiment, the ratio (E″/E′) between the storage elastic modulus E′ and the loss elastic modulus E″ measured by dynamic viscoelasticity measurement is Tanδ. The ratio (A/B) of the value (A) of Tan δ at −15° C. to the value (B) is 0.75 or more.
Since the dicing tape 20 of the present embodiment has the above structure, it is suppressed from tearing in an expanding step (described in detail later) at a low temperature. A low temperature is generally a temperature of 0° C. or lower.
The dynamic viscoelasticity measurement of the dicing tape 20 is performed according to the method described in the Examples. Each Tan δ is obtained from the average value of the results of three measurements.
The above ratio (A/B) may be 2.00 or less.

The above ratio (A/B) can be increased, for example, by increasing the value of Tan δ (A) at -15°C.
For example, by blending a material with a glass transition temperature (Tg) closer to −15° C. into the dicing tape 20 or by increasing the blending amount of that material, the Tan δ value (A) at −15° C. is increased. be able to.
On the other hand, the above ratio (E″/E′) can be reduced by increasing the value (B) of Tan δ at −5° C., for example.
For example, by blending a material with a glass transition temperature (Tg) farther from −5° C. into the dicing tape 20 or by increasing the blending amount of that material, the Tan δ value (B) at −5° C. is increased. be able to.

The Tan δ value (A) at −15° C. is preferably 0.05 or more, more preferably 0.07 or more, and even more preferably 0.10 or more. When the value of Tan δ (A) is 0.05 or more, there is an advantage that the relaxation property of the dicing tape 20 when pulled at -15° C. becomes greater.
The value (A) of Tan δ at −15° C. is preferably 0.50 or less, more preferably 0.40 or less, and even more preferably 0.30 or less. When the value of Tan δ (A) is 0.50 or less, there is an advantage that the stress when pulled at −15° C. can be transmitted to the die bonding layer 10 more efficiently.
The value (B) of Tan δ at -5°C is preferably 0.05 or more, more preferably 0.09 or more, and even more preferably 0.11 or more. When the value (B) of Tan δ is 0.05 or more, there is an advantage that the relaxation property of the dicing tape 20 when pulled at -5°C is increased.
The value (B) of Tan δ at -5°C is preferably 0.50 or less, more preferably 0.40 or less, and even more preferably 0.27 or less. When the value of Tan δ (B) is 0.50 or less, there is an advantage that the stress when pulled at −5° C. can be transmitted to the die bonding layer 10 more efficiently.

The dicing tape 20 preferably has a strength of 15 [N/20 mm] or more at 25% tension at -15°C. As a result, it is possible to improve the splittability of the wafer in the expansion process at a low temperature.
The strength at 25% tension at −15° C. may be 30 [N/20 mm] or less.
The above strength at 25% tension is a value measured according to the method described in Examples. The strength value is obtained from the average value of the results of three measurements.

The strength at 25% tension can be increased by, for example, selecting a harder resin as the resin constituting the dicing tape 20 or increasing the thickness of the base layer 21 . On the other hand, the strength at 25% tension can be reduced by, for example, selecting a softer resin as the resin constituting the dicing tape 20 or by making the thickness of the base layer 21 thinner. can be done.

The base material layer 21 may have a single layer structure or a laminated structure.
Each layer of the base material layer 21 is, for example, a metal foil, a fiber sheet such as paper or cloth, a rubber sheet, a resin film, or the like.
Examples of the fiber sheet forming the base material layer 21 include paper, woven fabric, and non-woven fabric.
Examples of materials for the resin film include polyolefins such as polyethylene (PE), polypropylene (PP), ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene-(meth)acrylic acid. Ethylene copolymers such as copolymers, ethylene-(meth)acrylic acid ester (random, alternating) copolymers; Polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polybutylene terephthalate (PBT) polyacrylate; polyvinyl chloride (PVC); polyurethane; polycarbonate; polyphenylene sulfide (PPS); aliphatic polyamide, polyamide such as wholly aromatic polyamide (aramid); polyvinylidene chloride; ABS (acrylonitrile-butadiene-styrene copolymer); cellulose or cellulose derivatives; silicone-containing polymers; These may be used singly or in combination of two or more.

When the base material layer 21 has a resin film, the resin film may be subjected to a stretching treatment or the like to control deformability such as an elongation rate.
The surface of the base material layer 21 may be surface-treated in order to enhance the adhesion with the pressure-sensitive adhesive layer 22 . As the surface treatment, for example, chemical methods such as chromic acid treatment, ozone exposure, flame exposure, high-voltage shock exposure, and ionizing radiation treatment, or oxidation treatments by physical methods can be employed. Moreover, a coating treatment with a coating agent such as an anchor coating agent, a primer, or an adhesive may be applied.

The base material layer 21 is selected from ethylene-vinyl acetate copolymer (EVA) resin, α-olefin thermoplastic elastomer resin, ethylene-methyl acrylate copolymer (EMA) resin, and ionomer resin (IO). At least one type is preferably included. Examples of α-olefin thermoplastic elastomers include α-olefin homopolymers and copolymers of two or more α-olefins.
The base material layer 21 may contain a mixture (blend) of multiple types of the above resins. For example, the base layer 21 may contain a mixture of ethylene-vinyl acetate copolymer resin (EVA) and ionomer resin (IO), or a mixture of ethylene-vinyl acetate copolymer resin (EVA) and polypropylene elastomer resin. may include In this type of mixture, the proportion of ethylene-vinyl acetate copolymer resin (EVA) may be 60% by mass or more and 80% by mass or less.
The ethylene-vinyl acetate copolymer resin (EVA) may contain 10% by mass or more and 30% by mass or less of vinyl acetate structural units.

The thickness of the base material layer 21 is preferably 80 μm or more and 150 μm or less. Such values are average values of measurements at at least three randomly chosen locations. The same applies to the thickness of the adhesive layer 22 hereinafter.

On the back side of the base material layer 21 (the side on which the adhesive layer 22 is not superimposed), a release agent (release agent) such as a silicone-based resin or a fluorine-based resin is applied in order to impart releasability. Mold processing may be performed.
The substrate layer 21 is preferably a light-transmitting (ultraviolet-transmitting) resin film or the like in that active energy rays such as ultraviolet rays can be applied to the pressure-sensitive adhesive layer 22 from the back side.

The dicing tape 20 of the present embodiment may include a release sheet that covers one surface of the adhesive layer 22 (the surface where the adhesive layer 22 does not overlap the base layer 21) before use. . When the die bond layer 10 having a smaller area than the adhesive layer 22 is arranged so as to fit within the adhesive layer 22, the release sheet is arranged so as to cover both the adhesive layer 22 and the die bond layer 10. The release sheet is used to protect the pressure-sensitive adhesive layer 22 and is peeled off before the die-bonding layer 10 is attached to the pressure-sensitive adhesive layer 22 .

As the release sheet, for example, a plastic film, paper, or the like surface-treated with a release agent such as a silicone-based, long-chain alkyl-based, fluorine-based, or molybdenum sulfide release agent can be used.
Examples of release sheets include polytetrafluoroethylene, polychlorotrifluoroethylene, polyvinyl fluoride, polyvinylidene fluoride, tetrafluoroethylene/hexafluoropropylene copolymer, chlorofluoroethylene/vinylidene fluoride copolymer, and the like. fluoropolymer films; polyolefin films such as polyethylene and polypropylene; and polyester films such as polyethylene terephthalate (PET).
As the release sheet, for example, a plastic film or paper surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent can be used.
Note that the release sheet can be used as a support material for supporting the adhesive layer 22 . In particular, the release sheet is preferably used when the pressure-sensitive adhesive layer 22 is overlaid on the base layer 21 . Specifically, the adhesive layer 22 is superimposed on the base material layer 21 in a state in which the release sheet and the adhesive layer 22 are laminated, and the release sheet is peeled off (transferred) after the superposition, so that the The adhesive layer 22 can be overlaid.

In this embodiment, the adhesive layer 22 contains, for example, an acrylic polymer, an isocyanate compound, and a polymerization initiator.
The adhesive layer 22 preferably has a thickness of 5 μm or more and 40 μm or less. The shape and size of the adhesive layer 22 are usually the same as the shape and size of the base material layer 21 .

In the dicing tape 20 of the present embodiment, the thickness of the adhesive layer 22 may account for 5% or more and 30% or less of the total thickness of the dicing tape 20 .

The above acrylic polymer has at least an alkyl (meth)acrylate structural unit, a hydroxyl group-containing (meth)acrylate structural unit, and a polymerizable group-containing (meth)acrylate structural unit in the molecule. A structural unit is a unit which comprises the main chain of an acrylic polymer. Each side chain in the above acrylic polymer is contained in each structural unit constituting the main chain.
In this specification, the notation "(meth)acrylate" represents at least one of methacrylate (methacrylic acid ester) and acrylate (acrylic acid ester). Similarly, the notation "(meth)acrylic acid" represents at least one of methacrylic acid and acrylic acid.

In the acrylic polymer contained in the adhesive layer 22, the above structural units can be confirmed by NMR analysis such as ¹ H-NMR and ¹³ C-NMR, pyrolysis GC/MS analysis, infrared spectroscopy, and the like. In addition, the molar ratio of the above structural units in the acrylic polymer is usually calculated from the blending amount (preparation amount) when the acrylic polymer is polymerized.

The structural unit of the above alkyl (meth)acrylate is derived from an alkyl (meth)acrylate monomer. In other words, the molecular structure after the polymerization reaction of the alkyl(meth)acrylate monomer is the structural unit of the alkyl(meth)acrylate. The notation "alkyl" represents the number of carbon atoms in the hydrocarbon moiety ester-bonded to (meth)acrylic acid.
The hydrocarbon portion of the alkyl moiety in the structural unit of the alkyl (meth)acrylate may be saturated hydrocarbon or unsaturated hydrocarbon.
The alkyl portion preferably does not contain polar groups containing oxygen (O), nitrogen (N), and the like. Thereby, it is possible to suppress the extreme increase in the polarity of the alkyl polymer. Therefore, the pressure-sensitive adhesive layer 22 is prevented from having excessive affinity for the die-bonding layer 10 . Therefore, the dicing tape 20 can be peeled off from the die bond layer 10 more satisfactorily. The number of carbon atoms in the alkyl portion may be 6 or more and 10 or less.

Structural units of alkyl (meth)acrylates include, for example, structural units such as hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and decyl (meth)acrylate.

Acrylic polymers have structural units of hydroxyl-containing (meth)acrylates, and the hydroxyl groups of such structural units readily react with isocyanate groups.
By coexisting an acrylic polymer having a hydroxyl group-containing (meth)acrylate structural unit and an isocyanate compound in the adhesive layer 22, the adhesive layer can be cured appropriately. Therefore, the acrylic polymer can be sufficiently gelled. Therefore, the adhesive layer 22 can exhibit adhesive performance while maintaining its shape.

The structural unit of the hydroxyl group-containing (meth)acrylate is preferably a structural unit of a hydroxyl group-containing C2-C4 alkyl (meth)acrylate. The notation "C2-C4 alkyl" represents the number of carbon atoms in the hydrocarbon moiety ester-bonded to (meth)acrylic acid. In other words, the hydroxyl group-containing C2-C4 alkyl (meth)acrylate monomer is a monomer in which (meth)acrylic acid and an alcohol having 2 to 4 carbon atoms (usually a dihydric alcohol) are ester-bonded.
The hydrocarbon portion of the C2-C4 alkyl is typically a saturated hydrocarbon. For example, a C2-C4 alkyl hydrocarbon moiety is a linear saturated hydrocarbon or a branched saturated hydrocarbon. The hydrocarbon portion of the C2-C4 alkyl is preferably free of polar groups containing oxygen (O), nitrogen (N), and the like.

Examples of structural units of hydroxyl group-containing C2-C4 alkyl (meth)acrylates include hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, hydroxy n-butyl (meth)acrylate, and hydroxy iso-butyl (meth)acrylate. Each structural unit of hydroxybutyl (meth)acrylate such as acrylate can be mentioned. In addition, in the structural unit of hydroxybutyl (meth)acrylate, the hydroxyl group (-OH group) may be bonded to the terminal carbon (C) of the hydrocarbon moiety, and the carbon (C) other than the terminal of the hydrocarbon moiety may be connected to

The above acrylic polymer contains a structural unit of a polymerizable group-containing (meth)acrylate having a polymerizable unsaturated double bond in the side chain.
By including the polymerizable group-containing (meth)acrylate structural unit in the above acrylic polymer, the pressure-sensitive adhesive layer 22 can be cured by irradiation with active energy rays (ultraviolet rays, etc.) before the pick-up process. Specifically, by irradiation with active energy rays such as ultraviolet rays, radicals are generated from the photopolymerization initiator, and the action of these radicals can cause a cross-linking reaction between the acrylic polymers. Thereby, the adhesive strength of the adhesive layer 22 before irradiation can be reduced by irradiation. Then, the die-bonding layer 10 can be peeled off from the pressure-sensitive adhesive layer 22 satisfactorily.
Ultraviolet rays, radiation, and electron beams are employed as active energy rays.

The structural unit of the polymerizable group-containing (meth)acrylate specifically has a molecular structure in which the isocyanate group of the isocyanate group-containing (meth)acrylate monomer is urethane-bonded to the hydroxyl group in the structural unit of the hydroxyl group-containing (meth)acrylate described above. may have

A polymerizable group-containing (meth)acrylate structural unit having a polymerizable group can be prepared after polymerization of an acrylic polymer. For example, after copolymerization of an alkyl (meth)acrylate monomer and a hydroxyl group-containing (meth)acrylate monomer, the hydroxyl group in a part of the structural units of the hydroxyl group-containing (meth)acrylate and the isocyanate group of the isocyanate group-containing polymerizable monomer can be subjected to a urethanization reaction to obtain the structural unit of the polymerizable group-containing (meth)acrylate.

The above isocyanate group-containing (meth)acrylate monomer preferably has one isocyanate group and one (meth)acryloyl group in the molecule. Such monomers include, for example, 2-isocyanatoethyl (meth)acrylate.

The adhesive layer 22 of the dicing tape 20 in this embodiment further contains an isocyanate compound. A part of the isocyanate compound may be in a state after reacting by urethanization reaction or the like.
The isocyanate compound has multiple isocyanate groups in the molecule. By having a plurality of isocyanate groups in the molecule of the isocyanate compound, the cross-linking reaction between the acrylic polymers in the pressure-sensitive adhesive layer 22 can proceed. Specifically, one isocyanate group of the isocyanate compound reacts with the hydroxyl group of the acrylic polymer, and the other isocyanate group reacts with the hydroxyl group of another acrylic polymer, thereby allowing the cross-linking reaction via the isocyanate compound to proceed.

Examples of isocyanate compounds include diisocyanates such as aliphatic diisocyanates, alicyclic diisocyanates, and araliphatic diisocyanates.

Examples of isocyanate compounds include polymerized polyisocyanates such as diisocyanate dimers and trimers, and polymethylene polyphenylene polyisocyanates.

In addition, the isocyanate compound includes, for example, a polyisocyanate obtained by reacting an excess amount of the isocyanate compound described above with an active hydrogen-containing compound. Active hydrogen-containing compounds include active hydrogen-containing low molecular weight compounds and active hydrogen-containing high molecular weight compounds.
As the isocyanate compound, allophanatized polyisocyanate, biuretized polyisocyanate, and the like can also be used.
Said isocyanate compound can be used individually by 1 type or in combination of 2 or more types.

The above isocyanate compound is preferably a reaction product of an aromatic diisocyanate and an active hydrogen-containing low molecular weight compound. Since the reactant of the aromatic diisocyanate has a relatively slow reaction rate of the isocyanate group, excessive curing of the pressure-sensitive adhesive layer 22 containing such a reactant is suppressed. As the above isocyanate compound, those having three or more isocyanate groups in the molecule are preferable.

The polymerization initiator contained in the adhesive layer 22 is a compound capable of initiating a polymerization reaction by applied heat or light energy. By including the polymerization initiator in the adhesive layer 22, the cross-linking reaction between the acrylic polymers can be advanced when the adhesive layer 22 is given heat energy or light energy. Specifically, the adhesive layer 22 can be cured by initiating a polymerization reaction between the polymerizable groups in the acrylic polymer having polymerizable group-containing (meth)acrylate structural units. As a result, the adhesive strength of the adhesive layer 22 is reduced, and the die-bonding layer 10 can be easily separated from the cured adhesive layer 22 in the pick-up process.
As the polymerization initiator, for example, a photopolymerization initiator or a thermal polymerization initiator is employed. A general commercial product can be used as the polymerization initiator.

The pressure-sensitive adhesive layer 22 may further contain components other than those mentioned above. Other components include, for example, tackifiers, plasticizers, fillers, anti-aging agents, antioxidants, UV absorbers, light stabilizers, heat stabilizers, antistatic agents, surfactants, and light release agents. etc. The types and amounts of other components used can be appropriately selected depending on the purpose.

Next, the dicing die-bonding film 1 of this embodiment will be described in detail.

The dicing die-bonding film 1 of this embodiment includes the dicing tape 20 described above and the die-bonding layer 10 laminated on the adhesive layer 22 of the dicing tape 20 . The die bond layer 10 will be adhered to a semiconductor wafer in the manufacture of semiconductor integrated circuits.

The die bond layer 10 may contain at least one of a thermosetting resin and a thermoplastic resin. The die bond layer 10 preferably contains a thermosetting resin and a thermoplastic resin.

Examples of thermosetting resins include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, and thermosetting polyimide resins. As the thermosetting resin, one type or two or more types are employed. Epoxy resin is preferable as the thermosetting resin because it contains less ionic impurities and the like that may cause corrosion of the semiconductor chip to be die-bonded. A phenolic resin is preferable as a curing agent for the epoxy resin.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolak type, ortho Epoxy resins of cresol novolac type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type, or glycidylamine type are included.

Phenolic resins can act as curing agents for epoxy resins. Examples of phenolic resins include novolac-type phenolic resins, resol-type phenolic resins, and polyoxystyrenes such as polyparaoxystyrene.
Examples of the novolak-type phenol resin include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, nonylphenol novolak resin, and the like.
As the phenol resin, only one kind or two or more kinds are adopted.

In the die bond layer 10, the hydroxyl group of the phenol resin is preferably 0.5 equivalent or more and 2.0 equivalent or less, more preferably 0.7 equivalent or more and 1.5 equivalent or less per equivalent of the epoxy group of the epoxy resin. This allows the curing reaction between the epoxy resin and the phenol resin to proceed sufficiently.

When the die bonding layer 10 contains a thermosetting resin, the content of the thermosetting resin in the die bonding layer 10 is preferably 5% by mass or more and 60% by mass or less with respect to the total mass of the die bonding layer 10, and 10% by mass. % or more and 50 mass % or less is more preferable. This allows the die bond layer 10 to appropriately function as a thermosetting adhesive.

Thermoplastic resins that can be contained in the die bond layer 10 include, for example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, and ethylene-acrylic acid ester copolymer. , polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon (trade name), phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluorine Resin etc. are mentioned.
As the thermoplastic resin, an acrylic resin is preferable because it contains few ionic impurities and has high heat resistance, so that the adhesiveness of the die bonding layer 10 can be further ensured.
As the thermoplastic resin, only one kind or two or more kinds are adopted.

The above acrylic resin is preferably a polymer in which the structural units of alkyl (meth)acrylate are the largest in terms of mass ratio among the structural units in the molecule. Examples of the alkyl (meth)acrylates include C2-C4 alkyl (meth)acrylates.
The acrylic resin may contain structural units derived from other monomer components copolymerizable with the alkyl (meth)acrylate monomer.
Examples of other monomer components include carboxy group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, acrylonitrile, and other functional group-containing monomers. Monomers or other various polyfunctional monomers may be used.
The acrylic resin preferably contains an alkyl (meth)acrylate (especially an alkyl (meth)acrylate having 4 or less carbon atoms in the alkyl portion) and a carboxy A copolymer of a containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (especially a polyglycidyl-based polyfunctional monomer), more preferably ethyl acrylate, butyl acrylate, acrylic acid, and acrylonitrile and polyglycidyl (meth)acrylate.

The glass transition temperature (Tg) of the acrylic resin is preferably −50° C. or higher and 50° C. or lower, and 10° C. or higher and 30° C., in that the elasticity and viscosity of the die bond layer 10 can be easily set within the desired range. The following are more preferable.

When the die-bonding layer 10 contains a thermosetting resin and a thermoplastic resin, the content of the thermoplastic resin in the die-bonding layer 10 is determined by the organic components excluding fillers (for example, thermosetting resins, thermoplastic resins, curing catalysts, etc.). , silane coupling agent, dye) is preferably 30% by mass or more and 70% by mass or less, more preferably 40% by mass or more and 60% by mass or less, and still more preferably 45% by mass or more and 55% by mass. % by mass or less. The elasticity and viscosity of the die bond layer 10 can be adjusted by changing the content of the thermosetting resin.

When the thermoplastic resin of the die bond layer 10 has a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be employed as the thermoplastic resin. This thermosetting functional group-containing acrylic resin preferably contains the largest mass ratio of structural units derived from alkyl (meth)acrylate in the molecule. Examples of the alkyl (meth)acrylate include the (meth)alkyl (meth)acrylates exemplified above.
On the other hand, the thermosetting functional group in the thermosetting functional group-containing acrylic resin includes, for example, glycidyl group, carboxyl group, hydroxy group, isocyanate group and the like.
The die bond layer 10 preferably contains a thermosetting functional group-containing acrylic resin and a curing agent. Examples of curing agents include those exemplified as curing agents that can be contained in the adhesive layer 22 . When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a compound having multiple phenolic structures as a curing agent. For example, the various phenolic resins described above can be used as curing agents.

The die bond layer 10 preferably contains filler. By changing the amount of filler in the die bond layer 10, the elasticity and viscosity of the die bond layer 10 can be adjusted more easily. Furthermore, the physical properties of the die bond layer 10, such as electrical conductivity, thermal conductivity, and elastic modulus, can be adjusted.
Fillers include inorganic fillers and organic fillers. An inorganic filler is preferable as the filler.
Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, boron nitride, crystalline silica and amorphous silica. Examples include fillers containing silica such as pure silica. Inorganic filler materials include simple metals such as aluminum, gold, silver, copper and nickel, and alloys. Fillers such as aluminum borate whiskers, amorphous carbon black, and graphite may also be used. The shape of the filler may be various shapes such as spherical, needle-like, and flake-like. As the filler, only one of the above fillers, or two or more of them are employed.

The average particle size of the filler is preferably 0.005 μm or more and 10 μm or less, more preferably 0.005 μm or more and 1 μm or less. When the average particle diameter is 0.005 μm or more, wettability and adhesiveness to adherends such as semiconductor wafers are further improved. When the average particle size is 10 μm or less, the characteristics of the added filler can be exhibited more fully, and the heat resistance of the die bonding layer 10 can be exhibited more. The average particle size of the filler can be determined using, for example, a photometric particle size distribution meter (eg, product name “LA-910” manufactured by Horiba Ltd.).

When the die bonding layer 10 contains a filler, the content of the filler is preferably 30% by mass or more and 70% by mass or less, more preferably 40% by mass or more and 60% by mass or less, relative to the total mass of the die bonding layer 10. and more preferably 42% by mass or more and 55% by mass or less.

The die bond layer 10 may contain other components as needed. Examples of the other components include curing catalysts, flame retardants, silane coupling agents, ion trapping agents, and dyes.
Examples of flame retardants include antimony trioxide, antimony pentoxide, and brominated epoxy resins.
Silane coupling agents include, for example, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane and the like.
Examples of ion trapping agents include hydrotalcites, bismuth hydroxide, benzotriazole, and the like.
Only one kind or two or more kinds are adopted as the other additives.

The die-bonding layer 10 preferably contains a thermoplastic resin (especially an acrylic resin), a thermosetting resin, and a filler in that the elasticity and viscosity can be easily adjusted.
In the die-bonding layer 10, the content of the thermoplastic resin such as acrylic resin is preferably 30% by mass or more and 70% by mass or less, and 40% by mass or more and 60% by mass or less, relative to the total mass of the organic components excluding the filler. more preferably 45% by mass or more and 55% by mass or less.
The content of the filler is preferably 30% by mass or more and 70% by mass or less, more preferably 40% by mass or more and 60% by mass or less, and 42% by mass or more and 55% by mass with respect to the total mass of the die bonding layer 10. % by mass or less is more preferable.

Although the thickness of the die bond layer 10 is not particularly limited, it is, for example, 1 μm or more and 200 μm or less. Such thickness may be greater than or equal to 50 μm and less than or equal to 135 μm. Even with a dicing die-bonding film having such a relatively thick die-bonding layer, it is possible to prevent the dicing tape from tearing in the expansion process at a low temperature. In addition, when the die-bonding layer 10 is a laminated body, said thickness is the total thickness of a laminated body.

The glass transition temperature (Tg) of the die bond layer 10 is preferably 0° C. or higher, more preferably 10° C. or higher. When the glass transition temperature is 0° C. or higher, the die bonding layer 10 can be easily broken by cool expansion. The upper limit of the glass transition temperature of the die bond layer 10 is 100° C., for example.

The die bond layer 10 may have a single layer structure as shown in FIG. 1, for example. As used herein, a single layer means having only layers formed of the same composition. A form in which a plurality of layers formed of the same composition are laminated is also a single layer.
On the other hand, the die-bonding layer 10 may have a multi-layer structure in which layers each formed of two or more different compositions are laminated, for example.

In the dicing die-bonding film 1 of the present embodiment, the pressure-sensitive adhesive layer 22 is cured by being irradiated with active energy rays (for example, ultraviolet rays) when used. Specifically, in a state in which the die bonding layer 10 having a semiconductor wafer bonded to one surface and the adhesive layer 22 bonded to the other surface of the die bonding layer 10 are laminated, ultraviolet rays or the like are applied to at least the adhesive layer 22. be irradiated. For example, ultraviolet rays or the like are irradiated from the side on which the base layer 21 is arranged, and the ultraviolet rays or the like pass through the base layer 21 and reach the adhesive layer 22 . The adhesive layer 22 is cured by irradiation with ultraviolet rays or the like.
Since the adhesive strength of the adhesive layer 22 can be lowered by curing the adhesive layer 22 after irradiation, the die bond layer 10 (with the semiconductor wafer adhered) can be peeled off relatively easily from the adhesive layer 22 after irradiation. can be made

The dicing die-bonding film 1 of the present embodiment may include a release sheet that covers one surface of the die-bonding layer 10 (the surface where the die-bonding layer 10 does not overlap the pressure-sensitive adhesive layer 22) before use. The release sheet is used to protect the die bond layer 10 and is released immediately before attaching an adherend (for example, a semiconductor wafer) to the die bond layer 10 .
As this release sheet, the same release sheet as described above can be employed. This release sheet can be used as a support material for supporting the die bond layer 10 . The release sheet is preferably used when laminating the die bond layer 10 on the adhesive layer 22 . Specifically, in a state in which the release sheet and the die bond layer 10 are laminated, the die bond layer 10 is superimposed on the adhesive layer 22, and after the superimposition, the release sheet is peeled off (transferred), thereby forming the die bond layer on the adhesive layer 22. 10 can be stacked.

Since the dicing die-bonding film 1 of the present embodiment is configured as described above, it is suppressed from tearing in the expansion process at a low temperature (described in detail later).

Next, a method for manufacturing the dicing tape 20 and the dicing die-bonding film 1 of this embodiment will be described.

The method for manufacturing the dicing die-bonding film 1 of this embodiment includes:
A process of manufacturing a dicing tape 20 (method of manufacturing a dicing tape) and a process of manufacturing a dicing die-bonding film 1 by stacking a die-bonding layer 10 on the manufactured dicing tape 20 are provided.

The manufacturing method of the dicing tape (the process of manufacturing the dicing tape) is
a synthesis step of synthesizing an acrylic polymer;
An adhesive that prepares the adhesive layer 22 by volatilizing the solvent from the adhesive composition containing the acrylic polymer, the isocyanate compound, the polymerization initiator, the solvent, and other components that are appropriately added according to the purpose. agent layer preparation step;
a laminating step of laminating the base layer 21 and the pressure-sensitive adhesive layer 22 by bonding the pressure-sensitive adhesive layer 22 and the base layer 21 together.

In the synthesis step, for example, an acrylic polymer intermediate is synthesized by radically polymerizing a C9-C11 alkyl (meth)acrylate monomer and a hydroxyl group-containing (meth)acrylate monomer.
Radical polymerization can be performed by a general method. For example, an acrylic polymer intermediate can be synthesized by dissolving each of the above monomers in a solvent, stirring with heating, and adding a polymerization initiator. Polymerization may be carried out in the presence of a chain transfer agent to control the molecular weight of the acrylic polymer.
Next, some hydroxyl groups of the structural units of the hydroxyl group-containing (meth)acrylate contained in the acrylic polymer intermediate and the isocyanate groups of the isocyanate group-containing polymerizable monomer are combined by a urethanization reaction. As a result, part of the structural units of the hydroxyl group-containing (meth)acrylate becomes the structural unit of the polymerizable group-containing (meth)acrylate.
A urethanization reaction can be performed by a general method. For example, the acrylic polymer intermediate and the isocyanate group-containing polymerizable monomer are stirred while heating in the presence of a solvent and a urethanization catalyst. As a result, the isocyanate groups of the isocyanate group-containing polymerizable monomer can be urethane-bonded to some of the hydroxyl groups of the acrylic polymer intermediate.

In the pressure-sensitive adhesive layer preparation step, for example, an acrylic polymer, an isocyanate compound, and a polymerization initiator are dissolved in a solvent to prepare a pressure-sensitive adhesive composition. By varying the amount of solvent, the viscosity of the composition can be adjusted. Next, the adhesive composition is applied to the release sheet. As the coating method, a general coating method such as roll coating, screen coating, gravure coating, or the like is employed. By subjecting the applied composition to desolvation treatment, solidification treatment, or the like, the applied adhesive composition is solidified, and the adhesive layer 22 is produced.

In the lamination step, the pressure-sensitive adhesive layer 22 and the base material layer 21 are laminated on the release sheet. Note that the release sheet may be in a state of being superimposed on the adhesive layer 22 before use.
In addition, in order to promote the reaction between the cross-linking agent and the acrylic polymer, and also to promote the reaction between the cross-linking agent and the surface portion of the base material layer 21, after the lamination step, in an environment of 50 ° C., for 48 hours. An aging treatment step may be implemented.
In addition, the base material layer 21 may use a commercially available film or the like, or may be produced by forming a film by a general method. Examples of film-forming methods include a calendar film-forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a dry lamination method, and the like. A co-extrusion method may be employed.

Through these steps, the dicing tape 20 can be manufactured.

The manufacturing method of the dicing die-bonding film (the process of manufacturing the dicing die-bonding film) includes:
a resin composition preparation step of preparing a resin composition for forming the die bond layer 10;
A die-bonding layer producing step of producing the die-bonding layer 10 from the resin composition;
and an attaching step of attaching the die bonding layer 10 to the adhesive layer 22 of the dicing tape 20 manufactured as described above.

In the resin composition preparation step, for example, an epoxy resin, a curing catalyst for the epoxy resin, an acrylic resin, a phenol resin, a solvent, etc. are mixed, and the resin composition is prepared by dissolving each resin in the solvent. By varying the amount of solvent, the viscosity of the composition can be adjusted. In addition, as these resins, commercially available products can be used.

In the die-bonding layer preparation step, for example, the resin composition prepared as described above is applied to a release sheet. The coating method is not particularly limited, and for example, common coating methods such as roll coating, screen coating, gravure coating and the like are employed. Next, if necessary, the applied composition is solidified by solvent removal treatment, curing treatment, or the like, to produce the die bond layer 10 .

In the attaching step, the release sheets are peeled off from the adhesive layer 22 of the dicing tape 20 and the die bonding layer 10, respectively, and the die bonding layer 10 and the adhesive layer 12 are attached together so that they are in direct contact. For example, they can be attached by pressing. The temperature for bonding is not particularly limited, and is, for example, 30° C. or higher and 50° C. or lower, preferably 35° C. or higher and 45° C. or lower. The linear pressure during bonding is not particularly limited, but is preferably 0.1 kgf/cm or more and 20 kgf/cm or less, more preferably 1 kgf/cm or more and 10 kgf/cm or less.

The dicing die-bonding film 1 manufactured as described above is used, for example, as an auxiliary tool for manufacturing semiconductor integrated circuits. Specific examples of use will be described below.

A method of manufacturing a semiconductor integrated circuit generally includes a step of cutting out chips from a semiconductor wafer on which a circuit surface is formed and assembling the chips.
This process includes, for example, a half-cut process in which grooves are formed in a semiconductor wafer to be processed into chips (dies) by cutting the semiconductor wafer, and the semiconductor wafer is ground to reduce the thickness, and a half-cut process is performed. A mounting step of attaching one surface of the semiconductor wafer (for example, the surface opposite to the circuit surface) to the die bond layer 10 and fixing the semiconductor wafer to the dicing tape 20, and widening the interval between the half-cut semiconductor chips. An expanding step, a pickup step of removing the semiconductor chip (die) with the die-bonding layer 10 adhered by peeling between the die-bonding layer 10 and the adhesive layer 22, and a semiconductor chip with the die-bonding layer 10 adhered. and a die bonding step of bonding a (die) to an adherend. When carrying out these steps, the dicing tape (dicing die-bonding film) of this embodiment is used as a manufacturing aid.

In the half-cutting process, as shown in FIGS. 2A to 2D, half-cutting is performed to cut the semiconductor integrated circuit into small pieces (dies). Specifically, a wafer processing tape T is attached to the surface of the semiconductor wafer opposite to the circuit surface. Also, a dicing ring R is attached to the tape T for wafer processing. Dividing grooves are formed with the wafer processing tape T attached. While the back grinding tape G is attached to the grooved surface, the wafer processing tape T attached first is peeled off. With the back grind tape G attached, the semiconductor wafer is ground until it has a predetermined thickness.

In the mounting step, as shown in FIGS. 3A and 3B, after attaching the dicing ring R to the adhesive layer 22 of the dicing tape 20, a half-cut semiconductor wafer is attached to the exposed surface of the die bonding layer 10. (glue). After that, the back grind tape G is peeled off from the semiconductor wafer.

In the expanding process, as shown in FIGS. 4A to 4C, after attaching the dicing ring R to the adhesive layer 22 of the dicing tape 20, it is fixed to the holder H of the expanding device. The dicing die-bonding film 1 is stretched so as to spread in the plane direction by pushing up the dicing die-bonding film 1 from below with a pushing-up member U provided in the expanding device. Thereby, the half-cut semiconductor wafer is cut together with the die bond layer 10 under specific temperature conditions. The above temperature condition is 0°C or lower, for example -20 to 0°C, preferably -15 to 0°C, more preferably -10 to -5°C. By lowering the push-up member U, the expanded state is canceled (up to this point, the cool expansion step). Furthermore, in the expanding step, as shown in FIGS. 5A and 5B, the dicing tape 20 is stretched so as to expand the area under higher temperature conditions. As a result, the adjacent split semiconductor chips are pulled apart in the plane direction of the film surface to further widen the gap (normal temperature expansion step).

In the pick-up process, as shown in FIG. 6, the semiconductor chip to which the die bond layer 10 is attached is separated from the adhesive layer of the dicing tape 20 . Specifically, the pin member P is raised to push up the semiconductor chip to be picked up through the dicing tape 20 . A suction jig J holds the pushed-up semiconductor chip.
In the die-bonding step, the semiconductor chip with the die-bonding layer 10 attached is adhered to an adherend.

As described above, the dicing die-bonding film 1 (dicing tape 20) of the present embodiment is used in the above-described steps, and in the cool-expanding step, dicing is performed at 0° C. or lower with the wafer adhered to the die-bonding layer 10. Tape 20 is stretched and the wafer is cleaved together with die bond layer 10 . Furthermore, the dicing tape 20 is stretched in the expansion step at room temperature.
The temperature in the cool-expanding step is usually 0°C or lower, for example, -15°C to 0°C. The temperature in the expansion step at room temperature is, for example, a temperature of 10°C to 25°C.

The dicing tape and dicing die-bonding film of the present embodiment are as exemplified above, but the present invention is not limited to the dicing tape and dicing die-bonding film exemplified above.
That is, various forms used in general dicing tapes and dicing die-bonding films can be employed as long as the effects of the present invention are not impaired.

Next, the present invention will be described in more detail by way of experimental examples, but the present invention is not limited to these.

A dicing tape was manufactured as follows. Also, using this dicing tape, a dicing die-bonding film was produced.

<Base material layer>
A single-layer substrate layer was prepared using the products shown below. Specifically, in each example and comparative example, the substrate layer was formed using an extrusion T-die molding machine. Extrusion temperature conditions ranged from 180 to 230°C.
(Example 1)
・ Raw material name: Vistamaxx 3980FL (thickness 125 μm)
Polypropylene elastomer resin Vistamaxx series manufactured by Exxon Mobil Japan (Example 2)
・Raw material name: REX PEARL EMA EB330H
Ethylene-methyl acrylate copolymer resin (EMA)
Japan Polyethylene Co., Ltd. REX PEARL EMA series (Example 3)
Blend of ethylene-vinyl acetate copolymer resin (EVA) and ionomer resin (IO) (7:3 mass ratio)
・Raw material name: EV550
Ethylene-vinyl acetate copolymer resin (contains 14% by mass of EVA vinyl acetate)
EVAFLEX series manufactured by Mitsui Dow Polychemicals Co., Ltd. Raw material name: Himilan 1706
Ionomer resin (IO)
Himilan (series) manufactured by Mitsui Dow Polychemicals
(Example 4)
Blend of ethylene-vinyl acetate copolymer resin (EVA) and polypropylene elastomer resin (7:3 mass ratio)
・Raw material name: EV550
Ethylene-vinyl acetate copolymer resin (contains 14% by mass of EVA vinyl acetate)
EVAFLEX series manufactured by Mitsui Dow Polychemicals Co., Ltd. Raw material name: Vistamaxx 3980FL
Polypropylene elastomer resin Vistamaxx series manufactured by Exxon Mobil Japan (Comparative Example 1)
・Raw material name: Novatec LC720
Low density polyethylene resin (LDPE)
Nippon Polyethylene Corporation Novatec LD Series (Comparative Example 2)
・Raw material name: WXK1233 (thickness 100 μm)
Metallocene polypropylene random copolymer WINTEC series manufactured by Japan Polypropylene Corporation (Example 5)
・ Raw material name: EV250 (thickness 125 μm)
Ethylene-vinyl acetate copolymer resin (EVA containing 28% by mass of vinyl acetate)
EVAFLEX series manufactured by Mitsui/Dow Polychemicals (Example 6)
・ Raw material name: EV550 (thickness 125 μm)
Ethylene-vinyl acetate copolymer resin (contains 14% by mass of EVA vinyl acetate)
EVAFLEX series manufactured by Mitsui Dow Polychemicals

<Adhesive layer>
(Synthesis of acrylic polymer)
A reaction vessel equipped with a cooling tube, a nitrogen inlet tube, a thermometer, and a stirring device is charged with the following raw materials so that the monomer concentration is about 55% by mass, and the polymerization reaction is carried out at 60° C. for 10 hours in a nitrogen stream. did This synthesized an acrylic polymer intermediate.
2-ethylhexyl acrylate (hereinafter also referred to as "2EHA"): 100 parts by mass,
2-hydroxyethyl acrylate (hereinafter also referred to as "HEA"): 20 parts by mass,
・Polymerization initiator: appropriate amount,
・Polymerization solvent: toluene 100 parts by mass of the synthesized acrylic polymer intermediate and 1.4 parts by mass of 2-methacryloyloxyethyl isocyanate (hereinafter also referred to as “MOI”) are mixed with dibutyltin dilaurate (0.1 parts by mass). An acrylic polymer was synthesized by an addition reaction in the presence of an air stream at 50° C. for 60 hours.
(Preparation of adhesive layer)
Next, an adhesive solution was prepared with the following composition, and toluene was appropriately added to adjust the viscosity to 500 mPa·s.
- Synthesized acrylic polymer: 100 parts by mass,
・ Polyisocyanate compound (product name “Coronate L”, manufactured by Nippon Polyurethane Co., Ltd.)
: 1.1 parts by mass,
・ Photopolymerization initiator (product name “Irgacure 184”, manufactured by Ciba Specialty Chemicals):
: 3 parts by mass A PET film was prepared as a release sheet. The adhesive solution prepared above was applied to the side of the release sheet using an applicator. One side of the release sheet (PET-based film) was subjected to silicone treatment as a release treatment, and an adhesive solution was applied to the release-treated surface. After the application, a drying treatment was performed by heating at 120° C. for 2 minutes to form a 10 μm-thick pressure-sensitive adhesive layer on the release sheet.

<Preparation of dicing tape>
Using a laminator, the exposed surface of the pressure-sensitive adhesive layer prepared on the release sheet and each base layer (thickness: 125 μm) were laminated together at room temperature to prepare a dicing tape.

<Production of die bond layer>
The following (a) to (d) were dissolved in methyl ethyl ketone to prepare a resin composition having a solid concentration of 40 to 50% by mass.
(a) Acrylic resin (product name “Teisan Resin SG-280 EK23” manufactured by Nagase ChemteX Corporation): 15% by mass
(b) Epoxy resin (product name “EPPN 501H” manufactured by Nippon Kayaku Co., Ltd.): 29% by mass
(c) Novolak-type phenolic resin (product name “HF-1M” manufactured by Meiwa Kasei Co., Ltd.) 16% by mass
(d) Inorganic filler (silica) (product name “SE-2050MCV” manufactured by Admatechs): 40% by mass
The resin composition was applied onto a release-treated film (release sheet) made of a polyethylene terephthalate film having a thickness of 50 μm and subjected to silicone release treatment. After that, drying treatment was performed at 130° C. for 2 minutes. Thus, a die bond layer having a thickness (average thickness) of 60 μm was produced. A 120-μm-thick die-bonding layer was produced by bonding the produced 60-μm-thick die-bonding layers together. The lamination conditions for lamination were 80° C., 0.15 MPa, and 10 mm/s (seconds).

<Production of dicing die bond film>
The prepared die bond layer was cut into a circle with a diameter of 330 mm and attached to each dicing tape (temperature: 25°C, speed: 10 mm/sec, pressure: 0.15 MPa).
Then, only the portion where the dicing layer was attached was irradiated with ultraviolet rays (300 mJ/cm ² ) to produce a dicing die-bonding film.

As described above, dicing tapes and dicing die-bonding films of Examples and Comparative Examples were produced by using the base layer having the structure shown in Table 1 and according to the above method.
Table 1 shows the physical properties of each dicing tape (Tan δ determined by dynamic viscoelasticity measurement, etc.).

<Tan δ at each temperature (-15 ° C., -5 ° C.) by dynamic viscoelasticity measurement>
Tan δ at each temperature was calculated for each dicing tape as follows.
A test sample having the size (width) shown below was cut out from the die-bonding film to prepare a test sample. Using a solid viscoelasticity measuring device (measuring device: RSA-G2, manufactured by TA), dynamic storage modulus was measured in tensile mode under the following test conditions.
Width of test sample: 10 mm,
Distance between chucks: 20 mm,
Temperature increase rate: 10°C/min,
Test temperature: -30 to 100°C,
Frequency: 1Hz
The storage modulus E' and the loss modulus E'' at -15°C and -5°C were measured, respectively, and Tan δ was calculated by the formula Tan δ = E''/E'. The average value of each measured value of 3 times was adopted. Higher Tan δ indicates higher viscous properties. The measurement was performed in both the MD direction and the TD direction, and the higher measured value was adopted as the result.

<Strength measurement by tensile tester (at 25% tension)>
Using a tensile tester, a dicing tape having a substrate layer and an adhesive layer was measured for strength at 25% tension under the following test conditions. The average value of each measured value of 3 times was adopted. The measurement was performed in both the MD direction and the TD direction, and the higher measured value was adopted as the result.
Measurement temperature: -15°C,
Width of test sample: 10 mm,
Distance between chucks: 50 mm,
Tensile speed: 300mm/min

<Evaluation of tear suppression performance and breakability at the time of expansion>
A 12-inch wafer was half-cut with a blade so as to be cleaved into a chip size of 10 mm×10 mm. This 12-inch wafer was back ground (grinded) to a thickness of 40 μm. After that, it was laminated with a dicing die bond film. The wafer bonding temperature was 70° C., and the bonding speed was 10 mm/sec.
After that, using a die separator DDS2300 manufactured by DISCO, the semiconductor wafer and the die bond layer were cut, and the dicing tape was thermally shrunk.
Specifically, in a cool expander unit, the semiconductor wafer and the die bond layer were cleaved under conditions of an expansion temperature of −15° C., an expansion speed of 300 mm/sec, and an expansion amount of 16 mm.
Subsequently, in a heat expander unit, the dicing tape is thermally shrunk under the conditions of an expansion amount of 7 mm, a heat temperature of 220 ° C., an air volume of 40 L / min, a heat distance of 20 mm, and a rotation speed of 5 ° / sec, thereby suppressing tearing of the dicing sheet. performance was evaluated. A case where the tape did not tear was evaluated as ◯, and a case where it occurred was evaluated as x.
With regard to the breaking property, the case where the breaking rate was less than 80% was evaluated as x, the case where it was 80% or more was evaluated as ◯, and the case where it was 90% or more was evaluated as ⊚.

As can be seen from the above evaluation results, the dicing die-bonding films of Examples were more inhibited from tearing in the expansion process at a low temperature than the dicing die-bonding films of Comparative Examples.
Moreover, according to the dicing tape having a strength of 15 [N/20 mm] or more at 25% tensile strength at -15°C, good splittability was achieved.

In the dicing tapes of Examples, the ratio (A/B) of the Tan δ value (A) at -15°C to the Tan δ value (B) at -5°C is 0.75 or more.
The value of Tan δ is an index of the viscosity of the dicing tape at that temperature. When the above ratio (A/B) is 0.75 or more, it means that the viscosity at -15°C, which is lower than the viscosity at -5°C, does not decrease so much. Therefore, even if the dicing tape is stretched at -15°C, it is thought that tearing is suppressed to the extent that the viscosity does not decrease so much.
The above properties of the dicing tape are particularly advantageous when the thickness of the die bond layer is relatively thick (for example, 50 μm or more and 135 μm or less). Specifically, in the expanding step, if the thickness of the die bonding layer is relatively large, a relatively large force is required to break the die bonding layer together with the wafer. Therefore, a large force is applied to the stretched dicing tape itself until the wafer and the die bond layer are cut. Due to this effect, the stretched dicing tape itself may be deformed, ie, torn, before the die bond layer is cut.
However, since the dicing tape of the present embodiment has physical properties defined by Tan δ as described above, the viscosity does not decrease much even at a low temperature of 0 ° C. or less, and as described above, in the expansion process at a low temperature, It is thought that tearing is suppressed.

The dicing tape and dicing die-bonding film of the present invention are suitably used, for example, as auxiliary tools when manufacturing semiconductor integrated circuits.

1: dicing die bond film,
10: die bond layer,
20: dicing tape,
21: Base material layer, 22: Adhesive layer.

Claims (7)

Regarding Tan δ, which is the ratio (E″/E′) of the storage modulus E′ and the loss modulus E″ measured by dynamic viscoelasticity measurement,
The ratio (A/B) of the Tan δ value (A) at -15°C to the Tan δ value (B) at -5°C is 0.75 or more and 2.00 or less ,
The dicing tape, wherein the Tan δ value (A) at −15° C. and the Tan δ value (B) at −5° C. are both 0.05 or more and 0.50 or less. 2. The dicing tape according to claim 1, which has a strength of 15 [N/20 mm] or more at 25% tension at -15°C. A substrate layer and a pressure-sensitive adhesive layer having higher adhesiveness than the substrate layer,
The dicing tape according to claim 1 or 2, wherein the base layer has a thickness of 80 µm or more and 150 µm or less. The dicing tape according to claim 3, wherein the adhesive layer has a thickness of 5 µm or more and 40 µm or less. A dicing die-bonding film comprising the dicing tape according to any one of claims 1 to 4 and a die-bonding layer attached to the dicing tape. The dicing die-bonding film according to claim 5, wherein the die-bonding layer has a thickness of 50 µm or more and 135 µm or less. Used in a cool expansion process in which the wafer is stretched while being bonded to the die bond layer at 0 ° C. or less,
7. The dicing die-bonding film according to claim 5, wherein said wafer is cleaved together with said die-bonding layer in said cool-expanding step.