CN112143389A - Dicing tape and dicing die-bonding film - Google Patents
Dicing tape and dicing die-bonding film Download PDFInfo
- Publication number
- CN112143389A CN112143389A CN202010563428.2A CN202010563428A CN112143389A CN 112143389 A CN112143389 A CN 112143389A CN 202010563428 A CN202010563428 A CN 202010563428A CN 112143389 A CN112143389 A CN 112143389A
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- Prior art keywords
- die
- dicing tape
- dicing
- layer
- resin
- Prior art date
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Images
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- C09J7/243—Ethylene or propylene polymers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
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- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/062—Copolymers with monomers not covered by C09J133/06
- C09J133/066—Copolymers with monomers not covered by C09J133/06 containing -OH groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2423/00—Presence of polyolefin
- C09J2423/04—Presence of homo or copolymers of ethene
- C09J2423/046—Presence of homo or copolymers of ethene in the substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2423/00—Presence of polyolefin
- C09J2423/10—Presence of homo or copolymers of propene
- C09J2423/106—Presence of homo or copolymers of propene in the substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Provided are a dicing tape and a dicing die-bonding film. Provided is a dicing tape or the like, wherein the ratio (E '/E') of the storage modulus E 'to the loss modulus E' measured by dynamic viscoelasticity measurement, that is, the ratio (A/B) of the Tan value (A) at-15 ℃ to the Tan value (B) at-5 ℃ is 0.75 or more.
Description
Technical Field
The present invention relates to a dicing tape used for manufacturing, for example, a semiconductor integrated circuit, and a dicing die-bonding film provided with the dicing tape.
Background
Conventionally, dicing die-bonding films used for manufacturing semiconductor integrated circuits have been known. Such a dicing die-bonding film includes, for example, a dicing tape and a die-bonding layer laminated on the dicing tape and bonded to a wafer. The dicing tape has a base material layer and an adhesive layer in contact with the die bond layer. Such a dicing die-bonding film is used in the manufacture of a semiconductor integrated circuit, for example, as described below.
A method of manufacturing a semiconductor integrated circuit generally includes: the method includes a pre-process of forming a circuit surface on one surface of a wafer by using a highly integrated electronic circuit, and a post-process of cutting out chips from the wafer on which the circuit surface is formed and assembling the chips.
The post-process includes, for example, the following steps: a mounting step of attaching a surface of the wafer on the opposite side to the circuit surface to the chip bonding layer and fixing the wafer to a dicing tape; a dicing step of dicing the wafer, which is attached to the dicing tape via the chip bonding layer, into small chips (Die); an expansion step of expanding the interval between the chips formed into the small pieces; a pickup step of peeling the Die bonding layer and the adhesive layer to take out the Die (Die) with the Die bonding layer attached thereto; and a Die bonding step of bonding the Die (Die) with the Die bonding layer attached thereto to an adherend. A semiconductor integrated circuit is manufactured through these steps.
In the above-described manufacturing method, in the expanding step, the dicing tape is radially stretched under a low temperature condition of, for example, 0 ℃ or lower in a state where the wafer is placed on the chip bonding layer superposed on the dicing tape, whereby the wafer is cleaved together with the chip bonding layer and is diced. However, there are cases where the dicing tape breaks with stretching. If the dicing tape is broken, the cutting becomes poor, and a trouble occurs in the subsequent pickup process. In order to prevent such a problem, it is strongly desired that the dicing tape has a performance of suppressing the breakage in the expanding process at a low temperature.
As a conventional dicing tape that addresses the problem in the expansion process, for example, a dicing tape having a storage modulus E' of 3 to 5GPa at 25 ℃ measured at a frequency of 10Hz is known (patent document 1).
The dicing tape described in patent document 1 can suppress the occurrence of floating between the die bonding layer and the adhesive layer in the spreading step at room temperature and the subsequent steps.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2018-195746
Disclosure of Invention
Problems to be solved by the invention
However, it cannot be said that sufficient studies have been made on dicing die-bonding films and dicing tapes in which cracking in the expansion step at low temperatures is suppressed.
Accordingly, an object of the present invention is to provide a dicing tape and a dicing die-bonding film in which cracking in a spreading process at a low temperature is suppressed.
Means for solving the problems
In order to solve the above problems, the dicing tape of the present invention is characterized in that the ratio (E "/E ') of the storage modulus E' and the loss modulus E" measured by dynamic viscoelasticity measurement, that is, the ratio (a/B) of the value (a) of Tan at-15 ℃ to the value (B) of Tan at-5 ℃ is 0.75 or more.
According to the dicing tape having the above-described configuration, breakage in the expansion step at low temperature is suppressed.
The above-mentioned dicing tape preferably: a strength at 25% elongation at-15 ℃ of 15[ N/20mm ] or more. This makes it possible to improve the wafer fracture performance in the expanding step at low temperatures.
The above-mentioned dicing tape preferably: the adhesive layer is provided with a base material layer and an adhesive layer having higher adhesiveness than the base material layer, and the thickness of the base material layer is 80 [ mu ] m or more and 150 [ mu ] m or less. This can further suppress cracking in the expansion step at low temperatures.
The above dicing tape preferably includes: the thickness of the pressure-sensitive adhesive layer is 5 μm or more and 40 μm or less. This can further suppress cracking in the expansion step at low temperatures.
The dicing die-bonding film of the present invention includes the dicing tape and a die-bonding layer bonded to the dicing tape.
In the dicing die-bonding film, the die-bonding layer may have a thickness of 50 μm or more and 135 μm or less. Even in the dicing die-bonding film having such a thick die-bonding layer, the dicing tape can be prevented from being broken in the expansion step at low temperature.
The dicing die-bonding film is preferably used in a cold-expanding step of stretching a wafer in a state where the wafer is bonded to the die-bonding layer at 0 ℃ or lower, and the wafer is cleaved together with the die-bonding layer in the cold-expanding step.
ADVANTAGEOUS EFFECTS OF INVENTION
The dicing tape and the dicing die-bonding film of the present invention exhibit the following effects: cracking in the expansion process at low temperatures can be further suppressed.
Drawings
FIG. 1: a cross-sectional view obtained by cutting the dicing die-bonding film of the present embodiment in the thickness direction.
FIG. 2A: a cross-sectional view schematically showing a case of half-cut processing in a manufacturing method of a semiconductor integrated circuit.
FIG. 2B: a cross-sectional view schematically showing a case of half-cut processing in a manufacturing method of a semiconductor integrated circuit.
FIG. 2C: a cross-sectional view schematically showing a case of half-cut processing in a manufacturing method of a semiconductor integrated circuit.
FIG. 2D: a cross-sectional view schematically showing a case of half-cut processing in a manufacturing method of a semiconductor integrated circuit.
FIG. 3A: a cross-sectional view schematically showing a case of a mounting process in a method of manufacturing a semiconductor integrated circuit.
FIG. 3B: a cross-sectional view schematically showing a case of a mounting process in a method of manufacturing a semiconductor integrated circuit.
FIG. 4A: a cross-sectional view schematically showing a case of an expanding process at a low temperature in a method of manufacturing a semiconductor integrated circuit.
FIG. 4B: a cross-sectional view schematically showing a case of an expanding process at a low temperature in a method of manufacturing a semiconductor integrated circuit.
FIG. 4C: a cross-sectional view schematically showing a case of an expanding process at a low temperature in a method of manufacturing a semiconductor integrated circuit.
FIG. 5A: the cross-sectional view schematically shows the case of an expansion process at normal temperature in a method for manufacturing a semiconductor integrated circuit.
FIG. 5B: the cross-sectional view schematically shows the case of an expansion process at normal temperature in a method for manufacturing a semiconductor integrated circuit.
FIG. 6: a cross-sectional view schematically showing a case of a pickup process in a method of manufacturing a semiconductor integrated circuit.
Description of the reference numerals
1: cutting the chip bonding film,
10: a chip bonding layer,
20: a cutting belt,
21: a base material layer,
22: an adhesive layer.
Detailed Description
Hereinafter, an embodiment of a dicing die-bonding film and a dicing tape according to the present invention will be described with reference to the drawings.
The dicing die-bonding film 1 of the present embodiment includes: a dicing tape 20, and a die bonding layer 10 laminated on the adhesive layer 22 of the dicing tape 20 and bonded to a semiconductor wafer.
The dicing tape 20 of the present embodiment is usually a long sheet, and is stored in a wound state until use. The dicing die-bonding film 1 of the present embodiment is used by being bonded to an annular frame having an inner diameter one turn larger than that of a silicon wafer to be subjected to dicing and dicing.
The dicing tape 20 of the present embodiment includes a base material layer 21 and a pressure-sensitive adhesive layer 22 that overlaps the base material layer 21.
In the dicing tape 20 of the present embodiment, the ratio (E "/E ') of the storage modulus E' and the loss modulus E" measured by dynamic viscoelasticity measurement, that is, the ratio (a/B) of the value (a) of Tan at-15 ℃ to the value (B) of Tan at-5 ℃ is 0.75 or more.
The dicing tape 20 of the present embodiment has the above-described configuration, and thus, cracks in the expanding process at low temperatures (which will be described in detail later) are suppressed. Low temperature generally means a temperature of 0 ℃ or lower.
The dynamic viscoelasticity of the dicing tape 20 can be measured by the method described in examples. Each Tan was obtained from the average of the measurement results obtained by performing 3 measurements.
The ratio (a/B) may be 2.00 or less.
The above-mentioned ratio (A/B) can be increased by increasing the value (A) of Tan at-15 ℃.
For example, the value (A) of Tan at-15 ℃ can be increased by compounding a material having a glass transition temperature (Tg) closer to-15 ℃ in the dicing tape 20, or increasing the compounding amount of the material.
On the other hand, the above-mentioned ratio (E '/E') can be made smaller by increasing the value (B) of Tan at-5 ℃.
For example, the value (B) of Tan at-5 ℃ can be increased by compounding a material having a glass transition temperature (Tg) that deviates more from-5 ℃ in the dicing tape 20, or by increasing the compounding amount of the material.
The value (A) of Tan at-15 ℃ is preferably 0.05 or more, more preferably 0.07 or more, and still more preferably 0.10 or more. When the Tan value (A) is 0.05 or more, there is an advantage that the relaxation of the dicing tape 20 when the drawing is performed at-15 ℃ is further increased.
The value (A) of Tan at-15 ℃ is preferably 0.50 or less, more preferably 0.40 or less, and still more preferably 0.30 or less. When the value (a) of Tan is 0.50 or less, there is an advantage that the stress at the time of stretching at-15 ℃ can be more efficiently transmitted to the die bonding layer 10.
The value (B) of Tan at-5 ℃ is preferably 0.05 or more, more preferably 0.09 or more, and still more preferably 0.11 or more. When the Tan value (B) is 0.05 or more, there is an advantage that the relaxation of the dicing tape 20 when the stretching is performed at-5 ℃.
The value (B) of Tan at-5 ℃ is preferably 0.50 or less, more preferably 0.40 or less, and still more preferably 0.27 or less. When the value (B) of Tan is 0.50 or less, there is an advantage that the stress at the time of stretching at-5 ℃ can be more efficiently transmitted to the die bonding layer 10.
The strength of the dicing tape 20 at 25% elongation at-15 ℃ is preferably 15[ N/20mm ] or more. This makes it possible to improve the wafer fracture performance in the expanding step at low temperatures.
The strength at 25% elongation at-15 ℃ may be 30[ N/20mm ] or less.
The strength at 25% elongation is a value measured by the method described in examples. The intensity value was obtained from the average value of the measurement results obtained by performing 3 measurements.
For example, the strength at 25% elongation can be increased by selecting a harder resin as the resin constituting the dicing tape 20, or by increasing the thickness of the base layer 21. On the other hand, the strength at 25% elongation can be reduced by selecting a softer resin as the resin constituting the dicing tape 20, or by further reducing the thickness of the base material layer 21, for example.
The substrate layer 21 may have a single-layer structure or a laminated structure.
Each layer of the base layer 21 is, for example, a fibrous sheet such as a metal foil, paper, or cloth, a rubber sheet, or a resin film.
Examples of the fiber sheet constituting the substrate layer 21 include paper, woven fabric, and nonwoven fabric.
Examples of the material of the resin film include: polyolefins such as Polyethylene (PE), polypropylene (PP), and ethylene-propylene copolymers; ethylene copolymers such as ethylene-vinyl acetate copolymers (EVA), ionomer resins, ethylene- (meth) acrylic acid copolymers, and ethylene- (meth) acrylate (random, alternating) copolymers; polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polybutylene terephthalate (PBT); a polyacrylate; polyvinyl chloride (PVC); a polyurethane; a polycarbonate; polyphenylene Sulfide (PPS); polyamides such as aliphatic polyamides and wholly aromatic polyamides (aramid fibers); polyetheretherketone (PEEK); a polyimide; a polyetherimide; polyvinylidene chloride; ABS (acrylonitrile-butadiene-styrene copolymer); cellulose or a cellulose derivative; a silicone-containing polymer; fluorine-containing polymers, and the like. These may be used singly or in combination of two or more.
When the base layer 21 is a resin film, the resin film may be subjected to a stretching treatment or the like to control the deformability such as elongation.
The surface of the base material layer 21 may be subjected to surface treatment to improve adhesion to the pressure-sensitive adhesive layer 22. As the surface treatment, oxidation treatment based on a chemical method or a physical method such as chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, ionizing radiation treatment, or the like can be employed. Further, coating treatment with a coating agent such as an anchor coating agent, a primer, or an adhesive may be performed.
The base material layer 21 preferably contains at least one selected from the group consisting of an ethylene-vinyl acetate copolymer (EVA) resin, an α -olefin-based thermoplastic elastomer resin, an ethylene-methyl acrylate copolymer (EMA) resin, and an ionomer resin (IO). The α -olefin-based thermoplastic elastomer includes homopolymers of α -olefins and copolymers of two or more α -olefins.
The substrate layer 21 may comprise a mixture (blend) of a plurality of the above resins. For example, the substrate layer 21 may include a mixture of an ethylene-vinyl acetate copolymer resin (EVA) and an ionomer resin (IO), or may include a mixture of an ethylene-vinyl acetate copolymer resin (EVA) and a polypropylene-based elastomer resin. In such a mixture, the proportion of the ethylene-vinyl acetate copolymer resin (EVA) may be 60 mass% or more and 80 mass% or less.
The ethylene-vinyl acetate copolymer resin (EVA) may contain 10 mass% or more and 30 mass% or less of a constituent unit of vinyl acetate.
The thickness of the base material layer 21 is preferably 80 μm or more and 150 μm or less. The value is an average of the measured values at least 3 randomly selected locations. The same applies to the thickness of the adhesive layer 22 described below.
The back surface side (the side not overlapping the pressure-sensitive adhesive layer 22) of the base material layer 21 may be subjected to a release treatment with a release agent (release agent) such as a silicone resin or a fluorine resin, for example, to impart releasability.
The base layer 21 is preferably a light-transmitting (ultraviolet-transmitting) resin film or the like, in view of being able to supply active energy rays such as ultraviolet rays to the pressure-sensitive adhesive layer 22 from the back surface side.
The dicing tape 20 of the present embodiment may be provided with a release sheet covering one surface of the pressure-sensitive adhesive layer 22 (the surface of the pressure-sensitive adhesive layer 22 on which the base material layer 21 is not stacked) in a state before use. When the die-bonding layer 10 having a smaller area than the adhesive layer 22 is disposed so as to be accommodated in the adhesive layer 22, the release sheet is disposed so as to cover both the adhesive layer 22 and the die-bonding layer 10. The release sheet is used to protect the adhesive layer 22, and is peeled off before the die-bonding layer 10 is attached to the adhesive layer 22.
As the release sheet, for example, a plastic film or paper surface-treated with a release agent such as silicone-based, long-chain alkyl-based, fluorine-based, or molybdenum sulfide can be used.
As the release sheet, for example, a film made of a fluorine-based polymer such as polytetrafluoroethylene, polychlorotrifluoroethylene, polyvinyl fluoride, polyvinylidene fluoride, a copolymer of tetrafluoroethylene and hexafluoropropylene, and a copolymer of chlorofluoroethylene and vinylidene fluoride; films made of polyolefins such as polyethylene and polypropylene; and films made of polyesters such as polyethylene terephthalate (PET).
As the release sheet, for example, a plastic film or paper coated with a release agent such as a fluorine-based release agent or a long chain alkyl acrylate-based release agent can be used.
The release sheet may be used as a support material for supporting the adhesive layer 22. The release sheet is particularly suitable for use when the pressure-sensitive adhesive layer 22 is superposed on the base layer 21. Specifically, the pressure-sensitive adhesive layer 22 may be superposed on the base layer 21 by superposing the pressure-sensitive adhesive layer 22 on the base layer 21 in a state where the release sheet and the pressure-sensitive adhesive layer 22 are laminated, and then peeling (transferring) the release sheet to superpose the pressure-sensitive adhesive layer 22 on the base layer 21.
In the present embodiment, the adhesive layer 22 contains, for example, an acrylic polymer, an isocyanate compound, and a polymerization initiator.
The adhesive layer 22 preferably has a thickness of 5 μm or more and 40 μm or less. The shape and size of the adhesive layer 22 are generally the same as those of the base material layer 21.
In the dicing tape 20 of the present embodiment, the ratio of the thickness of the pressure-sensitive adhesive layer 22 to the total thickness of the dicing tape 20 may be 5% to 30%.
The acrylic polymer has at least a constituent unit of an alkyl (meth) acrylate, a constituent unit of a hydroxyl group-containing (meth) acrylate, and a constituent unit of a polymerizable group-containing (meth) acrylate in the molecule. The constituent unit is a unit constituting the main chain of the acrylic polymer. Each side chain in the acrylic polymer is contained in each constituent unit constituting the main chain.
In the present specification, the expression "(meth) acrylate" means at least one of methacrylate and acrylate. Likewise, the expression "(meth) acrylic acid" means at least one of methacrylic acid and acrylic acid.
In the acrylic polymer contained in the pressure-sensitive adhesive layer 22, the above-mentioned constituent unit may be used1H-NMR、13NMR analysis such as C-NMR, thermal decomposition GC/MS analysis, infrared spectroscopy, and the like. The molar ratio of the above-mentioned constituent unit in the acrylic polymer can be usually calculated from the amount of blending (charged amount) in the polymerization of the acrylic polymer.
The constituent unit of the alkyl (meth) acrylate is derived from an alkyl (meth) acrylate monomer. In other words, the molecular structure of the alkyl (meth) acrylate monomer after the polymerization reaction is a constituent unit of the alkyl (meth) acrylate. The expression "alkyl" denotes a hydrocarbon moiety forming an ester bond with (meth) acrylic acid.
The hydrocarbon of the alkyl portion in the constituent unit of the alkyl (meth) acrylate may be a saturated hydrocarbon or an unsaturated hydrocarbon.
The alkyl moiety preferably does not contain a polar group containing oxygen (O), nitrogen (N), or the like. This can suppress an extreme increase in polarity of the alkyl polymer. Therefore, the adhesive layer 22 can be suppressed from having excessive affinity for the chip bonding layer 10. The dicing tape 20 can thereby be more favorably peeled off from the chip bonding layer 10. The number of carbons in the alkyl moiety may be 6 or more and 10 or less.
Examples of the constituent unit of the alkyl (meth) acrylate include various constituent units such as hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, and decyl (meth) acrylate.
The acrylic polymer has a constituent unit of a hydroxyl group-containing (meth) acrylate, and the hydroxyl group of the constituent unit is easily reacted with an isocyanate group.
By allowing an acrylic polymer having a constituent unit of a hydroxyl group-containing (meth) acrylate and an isocyanate compound to coexist in the pressure-sensitive adhesive layer 22 in advance, the pressure-sensitive adhesive layer 22 can be appropriately cured. Therefore, the acrylic polymer can be sufficiently gelled. Thereby, the adhesive layer 22 can maintain the shape and exert the adhesive property.
The constituent unit of the hydroxyl group-containing (meth) acrylate is preferably a constituent unit of a hydroxyl group-containing C2-C4 alkyl (meth) acrylate. The expression "C2-C4 alkyl" denotes the number of carbon atoms of the hydrocarbon moiety which forms an ester bond with (meth) acrylic acid. The hydroxyl group-containing C2-C4 alkyl (meth) acrylate monomer is a monomer obtained by forming an ester bond between (meth) acrylic acid and an alcohol having 2 to 4 carbon atoms (usually 2-membered alcohol).
The hydrocarbon moiety of the C2-C4 alkyl group is typically a saturated hydrocarbon. For example, the hydrocarbon moiety of the C2-C4 alkyl group is a straight-chain saturated hydrocarbon or a branched-chain saturated hydrocarbon. The hydrocarbon moiety of the C2-C4 alkyl group preferably does not contain a polar group containing oxygen (O), nitrogen (N), or the like.
Examples of the constituent unit of the hydroxyl group-containing C2-C4 alkyl (meth) acrylate include: and a hydroxybutyl (meth) acrylate such as hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxy-n-butyl (meth) acrylate or hydroxyisobutyl (meth) acrylate. In the constitutional unit of hydroxybutyl (meth) acrylate, a hydroxyl group (-OH group) may be bonded to a carbon (C) at the end of a hydrocarbon moiety, or may be bonded to a carbon (C) other than the end of a hydrocarbon moiety.
The acrylic polymer contains a constituent unit of a polymerizable group-containing (meth) acrylate having a polymerizable unsaturated double bond in a side chain.
By including the acrylic polymer with the constituent unit of the polymerizable group-containing (meth) acrylate, the pressure-sensitive adhesive layer 22 can be cured by irradiation with active energy rays (ultraviolet rays or the like) before the pickup step. Specifically, by irradiating active energy rays such as ultraviolet rays, radicals are generated from the photopolymerization initiator, and the acrylic polymers can be crosslinked by the action of the radicals. Thus, the adhesive force of the pressure-sensitive adhesive layer 22 before irradiation can be reduced by irradiation. Further, the chip bonding layer 10 can be favorably peeled from the adhesive layer 22.
As the active energy ray, ultraviolet rays, radiation rays, and electron beams can be used.
Specifically, the constituent unit of the polymerizable group-containing (meth) acrylate may have a molecular structure in which an isocyanate group of the isocyanate group-containing (meth) acrylate monomer and a hydroxyl group of the hydroxyl group-containing (meth) acrylate monomer form a urethane bond.
The constituent unit of the polymerizable group-containing (meth) acrylate having a polymerizable group can be prepared after polymerization of the acrylic polymer. For example, the above-mentioned polymerizable group-containing (meth) acrylate constituent unit can be obtained by copolymerizing an alkyl (meth) acrylate monomer and a hydroxyl group-containing (meth) acrylate monomer, and then subjecting a part of the hydroxyl groups of the hydroxyl group-containing (meth) acrylate constituent unit and the isocyanate groups of the isocyanate group-containing polymerizable monomer to a urethanization reaction.
The isocyanate group-containing (meth) acrylate monomer described above preferably has 1 isocyanate group and 1 (meth) acryloyl group in the molecule. Examples of the monomer include: 2-isocyanatoethyl (meth) acrylate.
The adhesive layer 22 of the dicing tape 20 in this embodiment further contains an isocyanate compound. A part of the isocyanate compound may be in a state after the reaction by a urethanization reaction or the like.
The isocyanate compound has a plurality of isocyanate groups in a molecule. By having a plurality of isocyanate groups in a molecule, the acrylic polymer in the pressure-sensitive adhesive layer 22 can be cross-linked. Specifically, the crosslinking reaction by the isocyanate compound can be performed by reacting one isocyanate group of the isocyanate compound with a hydroxyl group of the acrylic polymer and reacting the other isocyanate group with a hydroxyl group of the other acrylic polymer.
Examples of the isocyanate compound include: diisocyanates such as aliphatic diisocyanate, alicyclic diisocyanate, and araliphatic diisocyanate.
Further, examples of the isocyanate compound include: polymeric polyisocyanates such as dimers and trimers of diisocyanates, and polymethylene polyphenylene polyisocyanates.
Examples of the isocyanate compound include: a polyisocyanate obtained by reacting an excess of the above isocyanate compound with an active hydrogen-containing compound. Examples of the active hydrogen-containing compound include an active hydrogen-containing low molecular weight compound and an active hydrogen-containing high molecular weight compound.
As the isocyanate compound, allophanate polyisocyanate, biuret polyisocyanate, or the like can be used.
The isocyanate compounds mentioned above may be used singly or in combination of two or more.
As the above-mentioned isocyanate compound, a reaction product of an aromatic diisocyanate and an active hydrogen-containing low molecular weight compound is preferable. The reaction speed of the isocyanate group of the reaction product of the aromatic diisocyanate is relatively slow, and thus the adhesive layer 22 including the reaction product can suppress excessive curing. The isocyanate compound is preferably an isocyanate compound having 3 or more isocyanate groups in the molecule.
The polymerization initiator contained in the adhesive layer 22 is a compound capable of initiating a polymerization reaction by applied thermal energy or light energy. By including the polymerization initiator in the adhesive layer 22, a crosslinking reaction between the acrylic polymers can be performed when thermal energy or optical energy is applied to the adhesive layer 22. Specifically, the pressure-sensitive adhesive layer 22 can be cured by initiating a polymerization reaction between polymerizable groups in an acrylic polymer having a constituent unit of a polymerizable group-containing (meth) acrylate. This can reduce the adhesive force of the adhesive layer 22, and the die-bonding layer 10 can be easily peeled from the cured adhesive layer 22 in the pickup step.
As the polymerization initiator, for example, a photopolymerization initiator, a thermal polymerization initiator, or the like can be used. As the polymerization initiator, a general commercially available product can be used.
The adhesive layer 22 may also contain other components in addition to those described above. Examples of other components include: tackifiers, plasticizers, fillers, antioxidants, ultraviolet absorbers, light stabilizers, heat stabilizers, antistatic agents, surfactants, light strippers, and the like. The kind and amount of the other ingredients may be appropriately selected depending on the purpose.
Next, the dicing die-bonding film 1 of the present embodiment will be described in detail.
The dicing die-bonding film 1 of the present embodiment includes: the dicing tape 20 described above, and the die bonding layer 10 laminated on the adhesive layer 22 of the dicing tape 20. The die bonding layer 10 is bonded to a semiconductor wafer in the manufacture of a semiconductor integrated circuit.
The chip bonding layer 10 may include at least one of a thermosetting resin and a thermoplastic resin. The chip bonding layer 10 preferably contains a thermosetting resin and a thermoplastic resin.
Examples of the thermosetting resin include: epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, thermosetting polyimide resins, and the like. The thermosetting resin may be used alone or in combination of two or more. An epoxy resin is preferable as the thermosetting resin in that it contains less ionic impurities and the like that may cause corrosion of the semiconductor chip to be die-bonded. As the curing agent for the epoxy resin, a phenol resin is preferable.
Examples of the epoxy resin include: bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trihydroxyphenyl methane type, tetrahydroxyphenyl ethane type, hydantoin type, triglycidyl isocyanurate type, or glycidyl amine type.
The phenolic resin can function as a curing agent for the epoxy resin. Examples of the phenolic resin include: and polyoxystyrenes such as novolak-type phenol resins, resol-type phenol resins, and poly-p-oxystyrene.
Examples of the novolak phenol resin include: phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, nonylphenol novolac resins, and the like.
The phenolic resin may be used alone or in combination of two or more.
In the chip bonding layer 10, the hydroxyl group of the phenol resin is preferably 0.5 equivalent or more and 2.0 equivalents or less, and more preferably 0.7 equivalent or more and 1.5 equivalents or less, to 1 equivalent of the epoxy group of the epoxy resin. This makes it possible to sufficiently perform the curing reaction of the epoxy resin and the phenol resin.
When the chip bonding layer 10 contains a thermosetting resin, the content of the thermosetting resin in the chip bonding layer 10 is preferably 5% by mass or more and 60% by mass or less, and more preferably 10% by mass or more and 50% by mass or less, based on the total mass of the chip bonding layer 10. Thereby, the chip bonding layer 10 can appropriately exhibit a function as a thermosetting adhesive.
Examples of the thermoplastic resin that can be contained in the chip bonding layer 10 include: natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, an ethylene-vinyl acetate copolymer, an ethylene-acrylic acid ester copolymer, a polybutadiene resin, a polycarbonate resin, a thermoplastic polyimide resin, a polyamide resin such as 6-nylon and 6, 6-nylon (trade name), a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET and PBT, a polyamideimide resin, a fluororesin, and the like.
The thermoplastic resin is preferably an acrylic resin in that it has a small amount of ionic impurities and high heat resistance, and can further secure the adhesiveness of the chip bonding layer 10.
The thermoplastic resin may be used alone or in combination of two or more.
The acrylic resin is preferably a polymer having a maximum number of alkyl (meth) acrylate constituent units in terms of mass ratio among constituent units in the molecule. Examples of the alkyl (meth) acrylate include: C2-C4 alkyl (meth) acrylates.
The acrylic resin may further contain a constituent unit derived from another monomer component copolymerizable with the alkyl (meth) acrylate monomer.
Examples of the other monomer components include: carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, functional group-containing monomers such as acrylamide and acrylonitrile, and other various polyfunctional monomers.
From the viewpoint of exerting a higher cohesive force in the die-bonding layer 10, the acrylic resin is preferably a copolymer of an alkyl (meth) acrylate (particularly, an alkyl (meth) acrylate having 4 or less carbon atoms in the alkyl moiety) and a carboxyl group-containing monomer and a nitrogen atom-containing monomer and a polyfunctional monomer (particularly, a polyglycidyl-based polyfunctional monomer), and more preferably a copolymer of ethyl acrylate and butyl acrylate and acrylic acid and acrylonitrile and polyglycidyl (meth) acrylate.
The glass transition temperature (Tg) of the acrylic resin is preferably-50 ℃ or higher and 50 ℃ or lower, and more preferably 10 ℃ or higher and 30 ℃ or lower, in order to easily set the elasticity and viscosity of the chip bonding layer 10 within desired ranges.
When the chip bonding layer 10 contains a thermosetting resin and a thermoplastic resin, the content ratio of the thermoplastic resin in the chip bonding layer 10 is preferably 30% by mass or more and 70% by mass or less, more preferably 40% by mass or more and 60% by mass or less, and further preferably 45% by mass or more and 55% by mass or less, with respect to the total mass of organic components other than the filler (for example, the thermosetting resin, the thermoplastic resin, a curing catalyst, and the like, a silane coupling agent, and a dye). The elasticity and viscosity of the chip bonding layer 10 can be adjusted by changing the content ratio of the thermosetting resin.
When the thermoplastic resin of the chip bonding layer 10 has a thermosetting functional group, an acrylic resin having a thermosetting functional group can be used as the thermoplastic resin, for example. The thermosetting functional group-containing acrylic resin preferably contains a constituent unit derived from an alkyl (meth) acrylate in the largest mass ratio in the molecule. Examples of the alkyl (meth) acrylate include: the (meth) acrylic acid alkyl esters exemplified above.
On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include: glycidyl, carboxyl, hydroxyl, isocyanate, and the like.
The chip bonding layer 10 preferably contains a thermosetting functional group-containing acrylic resin and a curing agent. Examples of the curing agent include those exemplified as the curing agent that can be contained in the adhesive layer 22. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a compound having a plurality of phenol structures is preferably used as the curing agent. As the curing agent, for example, various phenolic resins as described above can be used.
The chip bonding layer 10 preferably contains a filler. By changing the amount of the filler in the chip bonding layer 10, the elasticity and viscosity of the chip bonding layer 10 can be adjusted more easily. Further, physical properties such as electrical conductivity, thermal conductivity, and elastic modulus of the chip bonding layer 10 can be adjusted.
Examples of the filler include inorganic fillers and organic fillers. As the filler, an inorganic filler is preferable.
Examples of the inorganic filler include: fillers including silica such as aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, boron nitride, crystalline silica, and amorphous silica. Examples of the material of the inorganic filler include simple metals such as aluminum, gold, silver, copper, and nickel, and alloys thereof. Can be fillers such as aluminum borate whisker, amorphous carbon black, graphite and the like. The filler may be in the form of a sphere, needle, or sheet. As the filler, only one kind of the above-mentioned filler or two or more kinds of the filler may be used.
The average particle diameter of the filler is preferably 0.005 μm or more and 10 μm or less, more preferably 0.005 μm or more and 1 μm or less. By setting the average particle size to 0.005 μm or more, wettability and adhesiveness to an adherend such as a semiconductor wafer are further improved. By setting the average particle diameter to 10 μm or less, the properties of the filler to be added can be more sufficiently exhibited, and the heat resistance of the chip bonding layer 10 can be further exhibited. The average particle diameter of the filler can be determined, for example, by using a photometric particle size distribution meter (e.g., product name "LA-910", HORIBA, manufactured by Ltd.).
When the chip bonding layer 10 contains a filler, the content of the filler is preferably 30 mass% or more and 70 mass% or less, more preferably 40 mass% or more and 60 mass% or less, and still more preferably 42 mass% or more and 55 mass% or less, with respect to the total mass of the chip bonding layer 10.
The chip bonding layer 10 may contain other components as necessary. Examples of the other components include: curing catalysts, flame retardants, silane coupling agents, ion scavengers, dyes, and the like.
Examples of the flame retardant include: antimony trioxide, antimony pentoxide, brominated epoxy resins, and the like.
Examples of the silane coupling agent include: beta- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, gamma-glycidoxypropyltrimethoxysilane, gamma-glycidoxypropylmethyldiethoxysilane, etc.
Examples of the ion scavenger include: hydrotalcites, bismuth hydroxide, benzotriazole, and the like.
As the other additives, only one kind or two or more kinds may be used.
The chip bonding layer 10 preferably contains a thermoplastic resin (particularly an acrylic resin), a thermosetting resin, and a filler, in view of easy adjustment of elasticity and viscosity.
In the chip bonding layer 10, the content ratio of the thermoplastic resin such as an acrylic resin to the total mass of the organic components excluding the filler is preferably 30 mass% or more and 70 mass% or less, more preferably 40 mass% or more and 60 mass% or less, and further preferably 45 mass% or more and 55 mass% or less.
The content ratio of the filler is preferably 30 mass% or more and 70 mass% or less, more preferably 40 mass% or more and 60 mass% or less, and further preferably 42 mass% or more and 55 mass% or less with respect to the total mass of the chip bonding layer 10.
The thickness of the chip bonding layer 10 is not particularly limited, and is, for example, 1 μm or more and 200 μm or less. The thickness may be 50 μm or more and 135 μm or less. Even in the dicing die-bonding film having such a thick die-bonding layer, the dicing tape can be prevented from being broken in the expanding step at low temperature. When the die bonding layer 10 is a laminate, the thickness is the total thickness of the laminate.
The glass transition temperature (Tg) of the chip bonding layer 10 is preferably 0 ℃ or higher, and more preferably 10 ℃ or higher. By setting the glass transition temperature to 0 ℃ or higher, the chip bonding layer 10 can be easily cleaved by cold spreading. The upper limit of the glass transition temperature of the chip bonding layer 10 is, for example, 100 ℃.
As shown in fig. 1, the chip bonding layer 10 may have a single-layer structure, for example. In the present specification, a single layer means a layer having only the same composition. The form in which a plurality of layers made of the same composition are stacked is also a single layer.
On the other hand, the chip bonding layer 10 may have a multilayer structure in which layers each formed of two or more different compositions are stacked, for example.
The dicing die-bonding film 1 of the present embodiment is used by, for example, irradiating active energy rays (for example, ultraviolet rays) to cure the adhesive layer 22. Specifically, in a state where a die bonding layer 10 having a semiconductor wafer bonded to one surface thereof and an adhesive layer 22 bonded to the other surface of the die bonding layer 10 are laminated, at least the adhesive layer 22 is irradiated with ultraviolet light or the like. For example, ultraviolet rays or the like are irradiated from the side where the base material layer 21 is disposed, and the ultraviolet rays or the like that have passed through the base material layer 21 reach the pressure-sensitive adhesive layer 22. The adhesive layer 22 is cured by irradiation with ultraviolet rays or the like.
Since the adhesive layer 22 is cured after irradiation, the adhesive force of the adhesive layer 22 can be reduced, and thus the die-bonding layer 10 (in a state where the semiconductor wafer is bonded) can be peeled off from the adhesive layer 22 relatively easily after irradiation.
The dicing die-bonding film 1 of the present embodiment may be provided with a release sheet covering one surface of the die-bonding layer 10 (the surface of the die-bonding layer 10 on which the adhesive layer 22 is not superimposed) in a state before use. The release sheet is used for protecting the chip bonding layer 10, and is peeled off immediately before an adherend (e.g., a semiconductor wafer) is attached to the chip bonding layer 10.
As the release sheet, the same release sheet as the above-described release sheet can be used. The release sheet can be used as a support material for supporting the chip bonding layer 10. A release sheet is suitably used when the die-bonding layer 10 is superposed on the adhesive layer 22. Specifically, the chip bonding layer 10 may be superposed on the adhesive layer 22 by superposing the chip bonding layer 10 on the adhesive layer 22 in a state where the release sheet is laminated on the chip bonding layer 10, and then peeling (transferring) the release sheet.
Since the dicing die-bonding film 1 of the present embodiment is configured as described above, cracking in the expansion process at low temperatures (which will be described later) can be suppressed.
Next, a method for manufacturing the dicing tape 20 and the dicing die-bonding film 1 according to the present embodiment will be described.
The method for manufacturing the dicing die-bonding film 1 of the present embodiment includes:
a step of manufacturing a dicing tape 20 (a method of manufacturing a dicing tape), and a step of manufacturing a dicing die-bonding film 1 by superposing a die-bonding layer 10 on the manufactured dicing tape 20.
The method for manufacturing a dicing tape (step of manufacturing a dicing tape) includes:
a synthesis step for synthesizing an acrylic polymer;
a pressure-sensitive adhesive layer production step of producing a pressure-sensitive adhesive layer 22 by volatilizing a solvent from a pressure-sensitive adhesive composition containing the acrylic polymer, the isocyanate compound, the polymerization initiator, the solvent, and other components added as appropriate according to the purpose; and
and a laminating step of laminating the base material layer 21 and the pressure-sensitive adhesive layer 22 by bonding the pressure-sensitive adhesive layer 22 and the base material layer 21.
In the synthesis step, for example, a C9 to C11 alkyl (meth) acrylate monomer and a hydroxyl group-containing (meth) acrylate monomer are subjected to radical polymerization to synthesize an acrylic polymer intermediate.
The radical polymerization can be carried out by a conventional method. For example, the acrylic polymer intermediate can be synthesized by dissolving the above-mentioned monomers in a solvent and stirring them while heating, and adding a polymerization initiator. In order to adjust the molecular weight of the acrylic polymer, the polymerization may be carried out in the presence of a chain transfer agent.
Next, a part of the hydroxyl groups of the constituent units of the hydroxyl group-containing (meth) acrylate contained in the acrylic polymer intermediate and the isocyanate groups of the isocyanate group-containing polymerizable monomer are bonded by a urethanization reaction. Thus, a part of the constituent unit of the hydroxyl group-containing (meth) acrylate forms a constituent unit of the polymerizable group-containing (meth) acrylate.
The carbamation reaction can be carried out by a conventional method. For example, the acrylic polymer intermediate and the isocyanate group-containing polymerizable monomer are stirred in the presence of a solvent and a urethane-forming catalyst while heating. This enables a urethane bond to be formed between a part of the hydroxyl groups of the acrylic polymer intermediate and the isocyanate groups of the isocyanate group-containing polymerizable monomer.
In the pressure-sensitive adhesive layer producing step, for example, an acrylic polymer, an isocyanate compound, and a polymerization initiator are dissolved in a solvent to prepare a pressure-sensitive adhesive composition. The viscosity of the composition can be adjusted by varying the amount of solvent. Next, the adhesive composition is applied to a release sheet. As the coating method, for example, a general coating method such as roll coating, screen coating, gravure coating, or the like is used. The applied composition is subjected to desolvation treatment, curing treatment, or the like, whereby the applied adhesive composition is cured to produce the adhesive layer 22.
In the laminating step, the pressure-sensitive adhesive layer 22 and the base material layer 21 are laminated in a state of being laminated on the release sheet. The release sheet may be in a state of being overlapped with the adhesive layer 22 until the use.
In order to promote the reaction between the crosslinking agent and the acrylic polymer and the reaction between the crosslinking agent and the surface portion of the base layer 21, a curing step may be performed at 50 ℃ for 48 hours after the laminating step.
The substrate layer 21 may be a commercially available film or the like, or may be formed by a usual method. Examples of the film forming method include: a calendering film-forming method, a casting method in an organic solvent, a inflation extrusion method in a closed system, a T-die extrusion method, a dry lamination method, and the like. Coextrusion may also be used.
Through these steps, the dicing tape 20 can be manufactured.
The method for manufacturing a dicing die-bonding film (step of manufacturing a dicing die-bonding film) includes the steps of:
a resin composition preparation step of preparing a resin composition for forming the chip bonding layer 10;
a chip bonding layer production step of producing a chip bonding layer 10 from the resin composition; and
and an attaching step of attaching the chip bonding layer 10 to the adhesive layer 22 of the dicing tape 20 obtained in the above-described manner.
In the resin composition preparation step, for example, an epoxy resin, a curing catalyst for an epoxy resin, an acrylic resin, a phenol resin, a solvent, and the like are mixed and each resin is dissolved in a solvent to prepare a resin composition. The viscosity of the composition can be adjusted by varying the amount of solvent. As these resins, commercially available products can be used.
In the chip bonding layer formation step, for example, the resin composition prepared in the above manner is applied to a release sheet. The coating method is not particularly limited, and for example, a general coating method such as roll coating, screen coating, gravure coating, or the like can be used. Next, the applied composition is cured by desolvation treatment, curing treatment, or the like as necessary, thereby producing the chip bonding layer 10.
In the attaching step, the release sheet is peeled off from each of the pressure-sensitive adhesive layer 22 of the dicing tape 20 and the die-bonding layer 10, and the die-bonding layer 10 and the pressure-sensitive adhesive layer 22 are attached to each other so as to be in direct contact with each other. For example, the bonding may be performed by pressure bonding. The temperature at the time of bonding is not particularly limited, and is, for example, 30 ℃ to 50 ℃, preferably 35 ℃ to 45 ℃. The linear pressure at the time of bonding is not particularly limited, but is preferably 0.1kgf/cm or more and 20kgf/cm or less, and more preferably 1kgf/cm or more and 10kgf/cm or less.
The dicing die-bonding film 1 manufactured as described above is used as an auxiliary tool for manufacturing a semiconductor integrated circuit, for example. Specific examples of the use thereof will be described below.
A method of manufacturing a semiconductor integrated circuit generally includes a step of cutting out and assembling chips from a semiconductor wafer on which a circuit surface is formed.
This step includes, for example, the following steps: a half-cut step of forming a groove in a semiconductor wafer by processing the semiconductor wafer into chips (Die) by a dicing process, and grinding the semiconductor wafer to reduce the thickness; a mounting step of attaching one surface (for example, a surface on the opposite side of the circuit surface) of the semiconductor wafer subjected to the half dicing process to the die bonding layer 10, and fixing the semiconductor wafer to the dicing tape 20; an expanding step of expanding the interval between the semiconductor chips subjected to the half-cut processing; a pickup step of peeling the chip bonding layer 10 and the adhesive layer 22 and taking out the semiconductor chip (Die) in a state where the chip bonding layer 10 is attached; and a Die bonding step of bonding the semiconductor chip (Die) with the Die bonding layer 10 attached thereto to an adherend. In performing these steps, the dicing tape (dicing die-bonding film) of the present embodiment is used as a manufacturing aid.
In the half-cut step, as shown in fig. 2A to 2D, a half-cut process for cutting the semiconductor integrated circuit into chips (Die) is performed. Specifically, the wafer processing tape T is attached to the surface of the semiconductor wafer opposite to the circuit surface. Further, the dicing ring R is attached to the wafer processing tape T. The dividing grooves are formed in a state where the wafer processing tape T is attached. A back grinding tape G is attached to the surface having the grooves formed thereon, and the wafer processing tape T attached first is peeled off. Grinding is performed with the back grinding tape G attached until the semiconductor wafer has a predetermined thickness.
In the mounting step, as shown in fig. 3A to 3B, after the dicing ring R is mounted on the adhesive layer 22 of the dicing tape 20, the semiconductor wafer subjected to the half-dicing process is attached (bonded) to the exposed surface of the die bonding layer 10. The back grinding tape G is then peeled off from the semiconductor wafer.
In the expanding step, as shown in fig. 4A to 4C, the dicing ring R is attached to the adhesive layer 22 of the dicing tape 20, and then fixed to the holding tool H of the expanding device. The cut die-bonding film 1 is stretched and spread in the planar direction by lifting up the lifting member U provided in the spreading device from the lower side of the cut die-bonding film 1. Thus, the semiconductor wafer subjected to the half-cut processing is cleaved together with the chip bonding layer 10 under a specific temperature condition. The temperature is set to 0 ℃ or lower, for example, -20 to 0 ℃, preferably-15 to 0 ℃, and more preferably-10 to-5 ℃. The expansion state is released by lowering the jack-up member U (the cold expansion process up to this point). Further, in the expanding step, as shown in fig. 5A to 5B, the dicing tape 20 is stretched under a higher temperature condition to expand the area. Thereby, the adjacent semiconductor chips to be cut are separated in the surface direction of the thin film surface, and the interval is further widened (room temperature expansion step).
In the pickup step, as shown in fig. 6, the semiconductor chip with the die bonding layer 10 attached thereto is peeled off from the adhesive layer 22 of the dicing tape 20. Specifically, the pin member P is raised to lift the semiconductor chip to be picked up via the dicing tape 20. The semiconductor chip lifted up is held by an adsorption jig J.
In the die bonding step, the semiconductor chip with the die bonding layer 10 attached thereto is bonded to an adherend.
As described above, the dicing die-bonding film 1 (dicing tape 20) according to the present embodiment can be used in the above-described step, and in the cold-spreading step, the dicing tape 20 is stretched at 0 ℃ or lower in a state where the wafer is bonded to the die-bonding layer 10, and the wafer is cut together with the die-bonding layer 10. Further, the dicing tape 20 is stretched in the expanding step at normal temperature.
The temperature in the cold-expansion step is usually 0 ℃ or lower, for example, a temperature of-15 to 0 ℃. The temperature in the expansion step at normal temperature is, for example, 10 to 25 ℃.
The matters disclosed in the present specification include the following matters.
(1)
A dicing tape, wherein with respect to Tan, which is the ratio (E "/E ') of a storage modulus E ' to a loss modulus E ' measured by dynamic viscoelasticity measurement,
a ratio (A/B) of a value (A) of Tan at-15 ℃ to a value (B) of Tan at-5 ℃ is 0.75 to 2.00.
(2)
The dicing tape according to the above (1), wherein the strength at 25% elongation at-15 ℃ is 15[ N/20mm ] or more and 30[ N/20mm ] or less.
(3)
The dicing tape according to the above (1) or (2), comprising a base material layer and an adhesive layer having higher adhesiveness than the base material layer,
the thickness of the base material layer is 80 μm or more and 150 μm or less.
(4)
The dicing tape according to the item (3), wherein the adhesive layer has a thickness of 5 μm or more and 40 μm or less.
(5)
The dicing tape according to any one of the above (1) to (4), wherein a value (A) of Tan at-15 ℃ is 0.05 or more and 0.50 or less,
a Tan value (B) at-5 ℃ of 0.05 to 0.50.
(6)
The dicing tape according to any one of the above (3) to (5), wherein the base layer contains at least one selected from the group consisting of an ethylene-vinyl acetate copolymer (EVA) resin, an α -olefin-based thermoplastic elastomer resin, an ethylene-methyl acrylate copolymer (EMA) resin, and an ionomer resin (IO).
(7)
The dicing tape according to the item (6), wherein the base layer is formed of a polypropylene-based elastomer resin, an ethylene-methyl acrylate copolymer (EMA) resin, an ethylene-vinyl acetate copolymer (EVA) resin, a mixture of an ethylene-vinyl acetate copolymer (EVA) resin and an ionomer resin (IO), or a mixture of an ethylene-vinyl acetate copolymer (EVA) resin and a polypropylene-based elastomer resin.
(8)
The dicing tape according to any one of the above (3) to (7), wherein the base material layer has a single-layer structure.
(9)
The dicing tape according to any one of the above (3) to (8), wherein the pressure-sensitive adhesive layer comprises an acrylic polymer having, in a molecule, at least a constituent unit of a (meth) acrylic acid alkyl ester, a constituent unit of a hydroxyl group-containing (meth) acrylate, and a constituent unit of a polymerizable group-containing (meth) acrylate.
(10)
The dicing tape according to the above (9), wherein the adhesive layer further contains an isocyanate compound and a polymerization initiator.
(11)
The dicing tape according to any one of the above (3) to (10), wherein a ratio of a thickness of the pressure-sensitive adhesive layer to a total thickness of the dicing tape is 5% or more and 30% or less.
(12)
A dicing die-bonding film comprising the dicing tape according to any one of the above (1) to (11) and a die-bonding layer bonded to the dicing tape.
(13)
The dicing die-bonding film according to the item (12), wherein the die-bonding layer has a thickness of 50 μm or more and 135 μm or less.
(14)
The dicing die-bonding film according to the item (12) or (13), which is used in a cold-expanding step of stretching at 0 ℃ or lower in a state where a wafer is bonded to the die-bonding layer,
in the cold-expanding step, the wafer is cleaved together with the chip bonding layer.
(15)
The dicing tape according to any one of the above (12) to (14), wherein the chip bonding layer contains at least one of a thermosetting resin and a thermoplastic resin.
(16)
The dicing tape according to the item (15), wherein the chip bonding layer contains an epoxy resin and a phenol resin as the thermosetting resin, and contains an acrylic resin as the thermoplastic resin.
(17)
The dicing tape according to the above (15) or (16), wherein the chip bonding layer further contains a filler.
The dicing tape and the dicing die-bonding film according to the present embodiment are exemplified as described above, but the present invention is not limited to the dicing tape and the dicing die-bonding film exemplified above.
That is, various methods generally used for dicing tapes and dicing die-bonding films can be employed within a range not impairing the effects of the present invention.
Examples
The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.
The dicing tape was manufactured as follows. In addition, a dicing die-bonding film is manufactured using the dicing tape.
< substrate layer >
A single-layer substrate layer was produced using the following product. In detail, in each of examples and comparative examples, a substrate layer was formed using an extrusion T-die forming machine. The extrusion temperature is 180-230 ℃.
(example 1)
Name of raw material: vistamaxx 3980FL (thickness 125 μm)
Polypropylene elastomer resin
Vistamaxx series manufactured by Exxon Mobil Japan K.K
(example 2)
Name of raw material: REXPEARL EMA EB330H
Ethylene-methyl acrylate copolymer resin (EMA)
REXPEARL (REXPEARL EMA) series manufactured by Japan polyethylene company
(example 3)
Blend of ethylene-vinyl acetate copolymer resin (EVA) and ionomer resin (IO) (7: 3 mass ratio)
Name of raw material: EV550
Ethylene-vinyl acetate copolymer resin (EVA containing 14 mass% of vinyl acetate)
EVAFLEX series manufactured by DOW-MITSUI POLYCHEMICALS
Name of raw material: HIMILAN1706
Ionomer resin (IO)
HIMILAN (series) manufactured by DOW-MITSUI POLYCHEMICALS
(example 4)
Blend (7: 3 mass ratio) of ethylene-vinyl acetate copolymer resin (EVA) and polypropylene elastomer resin
Name of raw material: EV550
Ethylene-vinyl acetate copolymer resin (EVA containing 14% by mass of vinyl acetate)
EVAFLEX series manufactured by DOW-MITSUI POLYCHEMICALS
Name of raw material: vistamaxx 3980FL
Polypropylene elastomer resin
Vistamaxx series manufactured by Exxon Mobil Japan K.K
Comparative example 1
Name of raw material: novatec LC720
Low density polyethylene resin (LDPE)
Novatec LD series manufactured by Japan polyethylene Co Ltd
Comparative example 2
Name of raw material: WXK1233 (thickness 100 μm)
Metallocene polypropylene random copolymer
WINTEC series made by Japan Polypropylene core
(example 5)
Name of raw material: EV250 (thickness 125 μm)
Ethylene-vinyl acetate copolymer resin (EVA containing 28 mass% vinyl acetate)
EVAFLEX series manufactured by DOW-MITSUI POLYCHEMICALS
(example 6)
Name of raw material: EV550 (thickness 125 μm)
Ethylene-vinyl acetate copolymer resin (EVA containing 14% by mass of vinyl acetate)
EVAFLEX series manufactured by DOW-MITSUI POLYCHEMICALS
< adhesive layer >
(Synthesis of acrylic Polymer)
The following raw materials were charged into a reaction vessel equipped with a condenser tube, a nitrogen inlet tube, a thermometer and a stirring device so that the monomer concentration reached about 55 mass%, and polymerization was carried out at 60 ℃ for 10 hours in a nitrogen gas flow. Thereby synthesizing an acrylic polymer intermediate.
2-ethylhexyl acrylate (hereinafter also referred to as "2 EHA"): 100 parts by mass,
2-hydroxyethyl acrylate (hereinafter also referred to as "HEA"): 20 parts by mass,
Polymerization initiator: a proper amount of,
Polymerization solvent: toluene
An acrylic polymer was synthesized by subjecting 100 parts by mass of the synthesized acrylic polymer intermediate and 1.4 parts by mass of 2-methacryloyloxyethyl isocyanate (hereinafter also referred to as "MOI") to an addition reaction in the presence of dibutyltin dilaurate (0.1 part by mass) in an air stream at 50 ℃ for 60 hours.
(preparation of adhesive layer)
Then, a binder solution was prepared according to the following composition, and toluene was appropriately added to adjust the viscosity to 500mPa · s.
Synthetic acrylic polymer: 100 parts by mass,
Polyisocyanate Compound
(product name "Coronate L", manufactured by Nippon polyurethane Co., Ltd.)
: 1.1 parts by mass,
Photopolymerization initiator
(product name "Irgacure 184", manufactured by Ciba Specialty Chemicals Co., Ltd.):
: 3 parts by mass
A PET-based film was prepared as a release sheet. The adhesive solution prepared as above was applied on the side of the release sheet with an applicator. The release sheet (PET film) was subjected to silicone treatment as release treatment on one surface thereof, and the release treated surface was coated with a pressure-sensitive adhesive solution. After the coating, the coating was heated at 120 ℃ for 2 minutes to dry the coating, thereby forming a pressure-sensitive adhesive layer having a thickness of 10 μm on a release sheet.
< making of dicing tape >
The exposed surface of the pressure-sensitive adhesive layer produced on the release sheet was bonded to each base material layer (thickness 125 μm) at room temperature using a laminator to produce a dicing tape.
< production of chip bonding layer >
A resin composition having a solid content concentration of 40 to 50 mass% is prepared by dissolving the following (a) to (d) in methyl ethyl ketone.
(a) Acrylic Resin (tradename "Teisan Resin SG-280EK 23" tradename Rice-chemical Co., Ltd.): 15% by mass
(b) Epoxy resin (product name "EPPN 501H" manufactured by japan chemical corporation): 29% by mass
(c) Novolac type phenol resin (product name "HF-1M" manufactured by Kasei Co., Ltd.) 16 mass%
(d) Inorganic filler (silica) (product name "SE-2050 MCV" manufactured by Admatechs Co., Ltd.): 40% by mass
The resin composition was applied to a release-treated film (release sheet) of polyethylene terephthalate film having a thickness of 50 μm, which had been subjected to silicone release treatment. Thereafter, the drying treatment was carried out at 130 ℃ for 2 minutes. Thus, a die-bonding layer having a thickness (average thickness) of 60 μm was produced. The prepared chip bonding layers having a thickness of 60 μm were bonded to each other, thereby preparing a chip bonding layer having a thickness of 120 μm. The lamination conditions in the bonding were 80 ℃, 0.15MPa, and 10mm/s (sec).
< manufacture of dicing die-bonding film >
The prepared chip bonding layer was cut into a circular shape having a diameter of 330mm, and bonded to each dicing tape (temperature: 25 ℃, speed: 10 mm/sec, pressure: 0.15 MPa).
Then, only the portion to which the chip bonding layer was bonded was irradiated with ultraviolet light (300 mJ/cm)2) And manufacturing a dicing die bonding film.
The dicing tapes and dicing die-bonding films of examples and comparative examples were produced by the above-described methods using the base material layers having the configurations shown in table 1.
The physical properties (Tan and the like obtained by dynamic viscoelasticity measurement) of each dicing tape are shown in table 1.
[ Table 1]
< Tan > at each temperature (-15 ℃ C., -5 ℃ C.) obtained by dynamic viscoelasticity measurement
Tan at each temperature was calculated for each cut band as described below.
Test samples having dimensions (widths) shown below were cut out from the die-bonding film to prepare test samples. The dynamic storage modulus was measured in a tensile mode under the following test conditions using a solid viscoelasticity measuring apparatus (measuring apparatus: RSA-G2, TA Co.).
Width of test sample: 10mm in thickness,
Distance between chucks: 20mm in thickness,
Temperature rise rate: 10 ℃/min, the temperature of the mixture,
Test temperature: at-30 to 100℃,
Frequency: 1Hz
Storage modulus E 'and loss modulus E "at-15 ℃ and-5 ℃ were measured, respectively, and Tan was calculated from the calculation formula of Tan ═ E"/E'. The average value of the measurement values of 3 measurements was used. Higher Tan indicates higher tack properties. The measurement is performed in both the MD direction and the TD direction, and the result is the highest measured value.
< Strength measurement (at 25% elongation) by tensile tester >
The strength at 25% tension of the dicing tape having the base material layer and the pressure-sensitive adhesive layer was measured under the following test conditions using a tensile tester. The average value of the measurement values of 3 measurements was used. The measurement is performed in both the MD direction and the TD direction, and the highest value of the measured values is used as the final value.
Measuring temperature: at-15 deg.C,
Width of test sample: 10mm in thickness,
Distance between chucks: 50mm in thickness,
Stretching speed: 300 mm/min
< evaluation of crack suppression Performance and cuttability at expansion >
Blade half-cuts were made to a 12-inch wafer in such a manner that the dicing was performed at a chip size of 10mm × 10 mm. The 12-inch wafer was subjected to back grinding (grinding) until a thickness of 40 μm was reached. And then attaching the dicing die-bonding film. The wafer bonding temperature was 70 ℃, and the bonding speed was 10 mm/sec.
Thereafter, the semiconductor wafer and the chip bonding layer were cleaved by a die separation device DDS2300 manufactured by DISCO corporation, and the dicing tape was further heat-shrunk.
Specifically, the semiconductor wafer and the die bonding layer were cleaved by a cold spreading unit under conditions of a spreading temperature of-15 ℃, a spreading rate of 300 mm/sec, and a spreading amount of 16 mm.
Subsequently, the dicing tape was thermally shrunk by a thermal expansion unit under conditions of an expansion amount of 7mm, a heating temperature of 220 ℃, an air volume of 40L/min, a heating distance of 20mm, and a rotation speed of 5 °/second, thereby evaluating the fracture suppression performance of the dicing sheet. The one with no band breakage was evaluated as good, and the one with band breakage was evaluated as "x".
Regarding the cuttability, the case of the cuttability less than 80% was evaluated as "x", the case of 80% or more was evaluated as good, and the case of 90% or more was evaluated as "excellent".
From the above evaluation results, it is understood that the dicing die-bonding film of the example suppressed cracking in the expanding step at a low temperature, as compared with the dicing die-bonding film of the comparative example.
Further, the cutting ability can be improved by using a dicing tape having a strength of 15[ N/20mm ] or more at 25% elongation at-15 ℃.
In the dicing tapes of examples, the ratio (A/B) of the value (A) of Tan at-15 ℃ to the value (B) of Tan at-5 ℃ was 0.75 or more.
The Tan value is an index of the level of the tackiness of the dicing tape at that temperature. The above ratio (A/B) of 0.75 or more means that the viscosity at-15 ℃ is not so much lowered as compared with the viscosity at-5 ℃. Therefore, it is considered that even when the dicing tape is stretched at-15 ℃, the tackiness is not so reduced and the cracking can be suppressed.
The above properties of the dicing tape are particularly advantageous when the thickness of the chip bonding layer is thick (for example, 50 μm or more and 135 μm or less). Specifically, in the expanding step, if the thickness of the chip bonding layer is relatively large, a relatively large force is required until the chip bonding layer is cleaved together with the wafer. Therefore, a large force is applied to the stretched dicing tape itself until the wafer and the chip bonding layer are cleaved. Due to this influence, the stretched dicing tape itself may be deformed, that is, broken, until the chip bonding layer is cleaved.
However, since the dicing tape of the present embodiment has the physical properties defined by Tan as described above, the viscosity does not decrease so much at a low temperature of 0 ℃ or lower, and as described above, it is considered that cracking in the expansion step at a low temperature can be suppressed.
Industrial applicability
The dicing tape and the dicing die-bonding film of the present invention can be suitably used as an auxiliary tool in manufacturing a semiconductor integrated circuit, for example.
Claims (7)
1. A dicing tape wherein, with respect to a ratio E "/E ', i.e., Tan, of a storage modulus E ' to a loss modulus E ' measured by dynamic viscoelasticity measurement,
the ratio of the value A of Tan at-15 ℃ to the value B of Tan at-5 ℃, namely A/B, is 0.75 or more.
2. The dicing tape according to claim 1, having a strength at 25% elongation at-15 ℃ of 15[ N/20mm ] or more.
3. The dicing tape according to claim 1 or 2, comprising a base material layer and an adhesive layer having higher adhesiveness than the base material layer,
the thickness of the base material layer is 80 [ mu ] m or more and 150 [ mu ] m or less.
4. The dicing tape according to claim 3, wherein the thickness of the adhesive layer is 5 μm or more and 40 μm or less.
5. A dicing die-bonding film comprising the dicing tape according to any one of claims 1 to 4 and a die-bonding layer bonded to the dicing tape.
6. The dicing die-bonding film according to claim 5, wherein the thickness of the die-bonding layer is 50 μm or more and 135 μm or less.
7. The dicing die-bonding film according to claim 5 or 6, which is used in a cold-spreading step of stretching at 0 ℃ or lower in a state where a wafer is bonded to the die-bonding layer,
in the cold spreading step, the wafer is cleaved together with the chip bonding layer.
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| JP2019118614A JP7328807B2 (en) | 2019-06-26 | 2019-06-26 | Dicing tape and dicing die bond film |
| JP2019-118614 | 2019-06-26 |
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| CN112143389A true CN112143389A (en) | 2020-12-29 |
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| US20240258152A1 (en) * | 2021-05-28 | 2024-08-01 | Mitsui Chemicals Tohcello, Inc. | Method for manufacturing electronic device |
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| JP2010074135A (en) * | 2008-08-20 | 2010-04-02 | Hitachi Chem Co Ltd | Method of manufacturing semiconductor device and dicing-tape integral type adhesive sheet |
| JP2010074144A (en) * | 2008-08-20 | 2010-04-02 | Hitachi Chem Co Ltd | Dicing-tape integral type adhesive sheet and method of manufacturing semiconductor device using the same |
| JP2015185591A (en) * | 2014-03-20 | 2015-10-22 | 日立化成株式会社 | Wafer processing tape |
| JP2018182297A (en) * | 2017-04-17 | 2018-11-15 | 日東電工株式会社 | Dicing die-bonding film |
| CN108949051A (en) * | 2017-05-19 | 2018-12-07 | 日东电工株式会社 | Cut die bonding film |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202106830A (en) | 2021-02-16 |
| JP7328807B2 (en) | 2023-08-17 |
| KR20210001953A (en) | 2021-01-06 |
| JP2021005623A (en) | 2021-01-14 |
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