JP2010074135A - Method of manufacturing semiconductor device and dicing-tape integral type adhesive sheet - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for simultaneously cutting an adhesive sheet and a semiconductor wafer. <P>SOLUTION: The method of manufacturing a semiconductor device includes: a process (process I) for manufacturing a laminate, where a dicing tape and the semiconductor wafer are stacked via the adhesive sheet and the semiconductor wafer is divided; a process (process II) for cutting the semiconductor wafer and the adhesive sheet and then for separating the adhesive sheet from the dicing tape to obtain a semiconductor chip having the adhesive sheet; and a process (process III) for bonding the semiconductor chip having the adhesive sheet to a support member for mounting a semiconductor chip. In this case, the adhesive sheet contains a high molecular weight resin (A1) that contains a crosslinkable functional group is manufactured by at least (meta)acrilic acid ester, a multifunctional epoxy resin (A2) having a molecular weight less than 5,000, a phenol resin (A3), and inorganic filler (A4), and the dicing tape does not have any yield points in the tensile deformation. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor device manufacturing method and a dicing tape integrated adhesive sheet.

  Currently, as a manufacturing method of a semiconductor device, an adhesive sheet and a dicing tape are pasted on the back surface of a semiconductor wafer, and then a semiconductor wafer back surface pasting method in which a part of the semiconductor wafer, the adhesive sheet and the dicing tape is cut in a dicing process is generally used. Has been used. As an example of this, there has been proposed a method in which an adhesive sheet is attached on a dicing tape and this is attached to a semiconductor wafer (see, for example, Patent Documents 1 to 4).

  In the manufacturing method of the semiconductor wafer back surface pasting method, it is necessary to cut the adhesive sheet at the same time when dicing the semiconductor wafer. However, in a general dicing method using a diamond blade, the semiconductor wafer and the adhesive sheet are separated. In order to cut at the same time, it was necessary to slow down the cutting speed, resulting in an increase in cost.

  In recent years, the number of stacked chips in a package has increased for the purpose of increasing the storage capacity per package. Accordingly, the thickness of the chip or the semiconductor wafer is reduced by a back grinding process or the like, and the semiconductor is 100 μm or less in thickness, 70 μm or less in thickness, 55 μm or less in thickness, and 35 μm or less in the thinnest. A wafer is being manufactured.

  As the semiconductor wafer becomes thinner, the semiconductor wafer is easily broken during dicing, so that the production efficiency is greatly deteriorated, and the above-mentioned problems are becoming more serious. Since such a thin wafer is easily warped and easily broken, the adhesive sheet used for this is required to be softer than before.

  On the other hand, as a method of dividing the semiconductor wafer, a method of processing a groove to be a crease without completely cutting the semiconductor wafer, or a modified region by irradiating a laser beam inside the semiconductor wafer on the line to be cut. In recent years, a method has been proposed in which a step of easily separating a semiconductor wafer, such as a forming method, is performed, and then a cutting is performed by applying an external force.

  The former method is called half-cut dicing, and the latter method is called stealth dicing (see, for example, Patent Documents 5 and 6). These methods have an effect of reducing defects such as chipping particularly when the thickness of the semiconductor wafer is thin, and since a kerf width is not required, an effect of improving the yield can be expected.

JP 2002-226996 A JP 2002-158276 A Japanese Patent Laid-Open No. 02-032181 International Publication No. 04/109786 JP 2002-192370 A JP 2003-338467 A

  Here, in order to manufacture a semiconductor device by the semiconductor wafer back surface bonding method using the above-described half-cut dicing or stealth dicing, it is necessary to cut the adhesive sheet simultaneously with the semiconductor wafer. When a dicing tape is used, it is difficult to cut the adhesive sheet simultaneously with the semiconductor wafer. The adhesive sheet described in Patent Document 4 shows that this cutting is possible. An adhesive sheet that is softer and easier to extend than the adhesive sheet described, that is, the adhesive sheet contains at least a high molecular weight component, and the breaking elongation at 25 ° C. of the adhesive sheet in the B stage state exceeds 40%. In the case of an adhesive sheet having an elastic modulus of less than 4,000 MPa by dynamic viscoelasticity measurement at 900 Hz at 25 ° C., it can be surely cut, but in the combination of a conventional dicing tape and an adhesive film, A sufficiently satisfactory break could not be made.

  However, in order to prevent warping and cracking of the wafer, the adhesive sheet used for this is required to be a softer sheet in an uncured state than the adhesive sheet described in Patent Document 4. In addition, a sheet soft after curing is extremely important in applications such as a multi-layered semiconductor package (stacked package) because it has low warpage and high stress relaxation properties, and thus has excellent reliability.

  However, the adhesive sheet used in the conventional manufacturing method has both low elasticity and breakability due to external stress, and it is difficult to cut the adhesive sheet and the semiconductor wafer at the same time. In view of the above, there has been a demand for a method for manufacturing a semiconductor device capable of simultaneously cutting an adhesive sheet and a semiconductor wafer.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor device in which the adhesive sheet can be cut simultaneously with the semiconductor wafer under the usual cutting conditions of the adhesive sheet and the semiconductor wafer.

The present invention includes (1) a step of producing a laminate in which a dicing tape and a semiconductor wafer are laminated via an adhesive sheet, wherein the semiconductor wafer is divided (step I), and the semiconductor wafer. And cutting the adhesive sheet, then peeling between the adhesive sheet and the dicing tape to obtain a semiconductor chip with an adhesive sheet (Step II), and bonding the semiconductor chip with the adhesive sheet to a semiconductor chip mounting support member A method of manufacturing a semiconductor device comprising a step (step III),
The adhesive sheet contains a crosslinkable functional group and is produced using at least a (meth) acrylic acid ester (A1), a polyfunctional epoxy resin (A2) having a weight average molecular weight of less than 5,000, a phenol resin ( A3), containing an inorganic filler (A4),
The present invention relates to a method of manufacturing a semiconductor device, wherein the dicing tape does not have a yield point when it is subjected to tensile deformation.

  In the present invention, (2) the polyfunctional epoxy resin (A2) is a phenol novolac epoxy resin, a cresol novolac epoxy resin, a bisphenol F epoxy resin, a trishydroxyphenylmethane epoxy resin, or a bisphenol A epoxy resin. The method for manufacturing a semiconductor device according to (1), wherein the method is at least one selected from the group consisting of:

  In the present invention, (3) the polyfunctional epoxy resin (A2) has a weight average molecular weight of less than 3,000 and is at least one selected from a trishydroxyphenylmethane type epoxy resin and a bisphenol A type epoxy resin. The present invention relates to the method for manufacturing a semiconductor device according to (1) or (2).

  Moreover, this invention relates to the manufacturing method of the semiconductor device as described in any one of said (1)-(3) whose said phenol resin (A3) is polyfunctional phenol resin.

  In the present invention, (5) the phenol resin (A3) is a phenol resin having a hydroxyl equivalent weight of 150 g / eq or more, and is at least one selected from a phenol aralkyl resin and a phenol biphenylene resin. 4) The method for manufacturing a semiconductor device according to any one of 4).

  Moreover, this invention is (6) The manufacturing method of the semiconductor device as described in any one of said (1)-(5) in which the said dicing tape consists of one or more adhesive layers and one or more base material layers. About.

  Further, the present invention is as described in (6) above, wherein (7) at least one layer of the base material layer is made of a material containing a high molecular weight compound containing a functional group capable of forming an organic acid or a metal complex, and a metal ion. The present invention relates to a method for manufacturing a semiconductor device.

  In the present invention, (8) the material containing a high molecular weight compound containing a functional group capable of forming a metal complex and a metal ion, wherein a part of the carboxyl group of the acrylic copolymer is a molecule formed by a metal cation. The present invention relates to the method for manufacturing a semiconductor device according to (7), which is a material containing an ionomer resin that forms pseudo-crosslinks.

  In the present invention, (9) the substrate layer of the dicing tape is made of an ethylene-methacrylic acid copolymer substrate, a styrene-butylene-ethylene copolymer substrate, a polyvinyl chloride substrate, an ethylene-vinyl acetate copolymer. It comprises at least one layer selected from a polymer base material, a hydrogenated styrene-butadiene copolymer base material, a polyethylene base material, a polypropylene base material, and a polymer base material copolymerized with a chlorine-free monomer. (6) It is related with the manufacturing method of the semiconductor device as described in any one of (8).

  In the semiconductor device according to any one of (1) to (9), (10) in the step I, the semiconductor wafer is divided by half-cut dicing or stealth dicing. It relates to a manufacturing method.

  The present invention is also characterized in that (11) in the step I, a semiconductor wafer having a thickness of 100 μm or less is divided by stealth dicing, and in step II, the semiconductor wafer and the adhesive sheet are cut by expanding. ) To (10). The method for manufacturing a semiconductor device according to any one of the above items.

  The present invention is also obtained by (12) laminating the semiconductor wafer on the adhesive sheet using the dicing tape-integrated adhesive sheet obtained by laminating the adhesive sheet and the dicing tape. It is related with the manufacturing method of the semiconductor device as described in any one of said (1)-(11) characterized by the above-mentioned.

The present invention also includes (13) a step of producing a laminate in which a dicing tape and a semiconductor wafer are laminated via an adhesive sheet, wherein the semiconductor wafer is divided (step I), A step of cutting the semiconductor wafer and the adhesive sheet and then peeling between the adhesive sheet and the dicing tape to obtain a semiconductor chip with an adhesive sheet (Step II), and using the semiconductor chip with the adhesive sheet as a semiconductor chip mounting support member A dicing tape-integrated adhesive sheet used in Step I of the method for manufacturing a semiconductor device, comprising a step of bonding (Step III),
The dicing tape-integrated adhesive sheet is obtained by laminating the adhesive sheet and the dicing tape, and the adhesive sheet contains a crosslinkable functional group and is produced using at least a (meth) acrylic ester. (A1), containing a polyfunctional epoxy resin (A2) having a molecular weight of less than 5,000, a phenol resin (A3), and an inorganic filler (A4), and the dicing tape does not have a yield point during tensile deformation. The present invention relates to a dicing tape-integrated adhesive sheet.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the semiconductor device which can cut | disconnect an adhesive sheet simultaneously with a semiconductor wafer on the cutting conditions of the adhesive sheet and semiconductor wafer performed normally can be provided.

It is a conceptual diagram which shows suitable one Embodiment of the process Ia in this invention. It is a conceptual diagram which shows suitable one Embodiment of the process Ib in this invention. It is a conceptual diagram which shows suitable one Embodiment of the process Ic in this invention. It is a conceptual diagram which shows suitable one Embodiment of the process Id in this invention. It is a conceptual diagram which shows suitable one Embodiment of the process Ib in this invention. It is a conceptual diagram which shows suitable one Embodiment of the process II in this invention. It is a conceptual diagram which shows the state by which the semiconductor wafer and the adhesive sheet after process II in this invention were cut | disconnected. It is a conceptual diagram which shows one Embodiment of the process Id, the process Ib, and the process II in this invention. It is a conceptual diagram which shows suitable embodiment of the process III in this invention. It is a conceptual diagram which shows other suitable embodiment of the process III in this invention.

  The method for manufacturing a semiconductor device of the present invention is a laminate in which a dicing tape and a semiconductor wafer are laminated via an adhesive sheet, and a step of producing a laminate in which the semiconductor wafer is divided (step I), A step of cutting the semiconductor wafer and the adhesive sheet and then peeling between the adhesive sheet and the dicing tape to obtain a semiconductor chip with an adhesive sheet (Step II), and the semiconductor chip with the adhesive sheet as a semiconductor chip mounting support member A high molecular weight resin (A1) comprising a cross-linkable functional group and at least a (meth) acrylic acid ester, comprising a step of adhering to a semiconductor device (step III) A polyfunctional epoxy resin (A2) having a weight average molecular weight of less than 5,000, a phenol resin (A3), and an inorganic filler (A4). And, during the deformation the dicing tape tension, and characterized in that having no yield point.

  Hereinafter, the present invention will be described in detail.

(Dicing tape)
The dicing tape used in the production method of the present invention does not have a yield point when the dicing tape is pulled and deformed. Here, “yield” means that when the stress acting on the object exceeds the elastic limit as seen in the load-elongation diagram, stress-strain diagram, etc., the deformation gradually increases even though the load or stress does not increase. The “yield point” refers to a point at the maximum load and maximum stress value of the elastic behavior.

  A dicing tape having a yield point is a strip-shaped dicing tape having a width of 10 mm and a length of 30 mm, using a universal testing machine (manufactured by Orientec Co., Ltd., Tensilon UCT-5T type) at a temperature of 25 ° C. and a tensile speed of 5 mm / When the tensile test is performed under the conditions of minutes and the stress and strain until the dicing tape breaks are measured, and the strain is plotted on the X axis and the stress is plotted on the Y axis, the slope dY / dX is 0 or less from a positive value. It takes a stress value that changes to a negative value. That is, the dicing tape having no yield point does not take a stress value at which the inclination dY / dX changes from a positive value to 0 or a negative value.

  When a dicing tape having a yield point is used, when the semiconductor wafer and the adhesive sheet are cut by applying an external force to the dicing tape in the step II, no stress is applied to the semiconductor wafer and the adhesive sheet, and only the peripheral dicing tape is used. Therefore, the semiconductor wafer and the adhesive sheet cannot be cut or uncut portions remain, and the object of the present invention cannot be achieved.

  On the other hand, in the present invention, by using a dicing tape having no yield point, stress is easily applied to the semiconductor wafer and the adhesive sheet, the breakability is improved, and the semiconductor wafer and the adhesive sheet can be cut simultaneously. In particular, when the semiconductor wafer and the adhesive sheet are cut by a so-called expand, in which the dicing tape is uniformly expanded by radially extending the dicing tape, the dicing tape is uniformly extended, so that the breakability is improved. Furthermore, when a thin semiconductor wafer, for example, a semiconductor wafer having a thickness of 100 μm or less is used, the semiconductor wafer is separated by stealth dicing or half-cut dicing to reduce defects such as chipping and then bonded to the semiconductor wafer by expanding. Although it is preferable to cut the sheet, it is preferable to use a dicing tape that does not have a yield point at this time because the semiconductor wafer and the adhesive sheet can be cut simultaneously.

  The dicing tape used in the production method of the present invention preferably consists of one or more pressure-sensitive adhesive layers and one or more base material layers, and more preferably consists of one pressure-sensitive adhesive layer and one layer of base material layer. In addition, at least one layer of the base material layer is made of a material containing a high molecular weight compound containing a functional group capable of forming an organic acid or a metal complex and a metal ion, that is, a material containing an organic acid and a metal ion. Or a material comprising a high molecular weight compound containing a functional group capable of forming a metal complex and a metal ion, and preferably comprising a material containing a high molecular weight compound containing a functional group capable of forming a metal complex and a metal ion. More preferred.

  The material containing an organic acid and a metal ion contains an organic acid and a metal cation. Examples of the organic acid include a carboxylic acid, a sulfonic acid, a compound having a phenolic hydroxyl group, and the like. Among these, a carboxylic acid is preferable in that a complex is easily formed. Examples of the metal ion include one or more metals selected from periodic tables IA, IB, IIA, IIB, IIIA, IIIB, IVA, IVB, VA, VB, VIA, VIB, VIIB, and VIIIB. Among them, zinc ions or sodium ions are preferable, and zinc ions are more preferable from the viewpoint of easy formation of a crosslinking point, low cost and low toxicity. In order to contain a metal ion, it may be added to an organic acid in the form of a metal oxide, a metal hydroxide, a metal carbonate or the like. Specifically, zinc oxide, sodium hydroxide, sodium carbonate or the like is used. . The content of the organic acid in the material containing the organic acid and the metal ion is preferably 99.9 to 95% by mass from the viewpoint of maintaining the extensibility of the dicing tape, and the content of the metal ion is the same as described above. From the viewpoint of the above, it is preferably 0.1 to 5% by mass.

  Materials containing a high molecular weight compound containing a functional group capable of forming a metal complex and a metal ion include amino group, imino group, hydroxyl group, ether group, pyridyl group, imidazolyl group, carboxyl group, thiol group, amide group, sulfone group , A material containing a high molecular weight compound containing a functional group capable of forming a metal complex such as an oxime group, a hydroxam group, a phosphoric acid group, a ketone group and a metal ion, and among these, there is no yield point, A material containing a carboxyl group-containing high molecular weight compound and a metal ion is preferred because it has excellent elongation at low temperatures and low elongation anisotropy when formed into a film. More preferably, the material is a material containing an ionomer resin in which a part forms a pseudo-crosslink between molecules by a metal cation. The carboxyl group content in one molecule of the acrylic copolymer is preferably 0.05 to 5% by mass. Moreover, it is preferable that 10 to 100% of the carboxyl groups in one molecule of the acrylic copolymer form a pseudo-crosslink between molecules by a metal cation.

  The acrylic copolymer is preferably a copolymer of an olefin monomer and an α, β-unsaturated carboxylic acid monomer. Examples of the olefin monomer include ethylene, propylene, 1-butene, 3-methyl-1-butene, 4-methyl-1-pentene, 3-methyl-1-pentene, 1-heptene, 1-hexene, Examples include 1-decene and 1-dodecene, and among these, ethylene is preferable. Examples of the α, β-unsaturated carboxylic acid monomer include unsaturated carboxylic acids such as (meth) acrylic acid, crotonic acid, cinnamic acid, itaconic acid, fumaric acid and maleic acid; methyl (meth) acrylate , Ethyl (meth) acrylate, isopropyl (meth) acrylate, n-propyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl (meth) acrylate, hexyl (meth) acrylate, (meth) Cyclohexyl acrylate, n-octyl (meth) acrylate, isooctyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, n-nonyl (meth) acrylate, isononyl (meth) acrylate, (meth) acrylic acid (Meth) acrylic acid alkyl esters such as decyl; and the like. Among these, (meth) acrylic acid is preferred. Good. Further, as the monomer, a monomer copolymerizable with the olefin monomer or the α, β-unsaturated carboxylic acid monomer, such as lauryl (meth) acrylonitrile (meth) acrylonitrile, α-chloro. Cyano group-containing vinyl monomers such as (meth) acrylonitrile; vinyl aromatic monomers such as styrene, α-methylstyrene, vinyltoluene; itaconic acid monoethyl ester, fumaric acid monobutyl ester, maleic acid monobutyl ester Monoalkyl esters of unsaturated dicarboxylic acids such as 2-hydroxyethyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 2-hydroxy-3-phenoxypropyl ( (Meth) acrylate, glycerol (meth) acrylate, polyethylene glycol mono Hydroxyl group-containing vinyl monomers such as (meth) acrylate, polypropylene glycol mono (meth) acrylate and polyethylene glycol-polypropylene glycol mono (meth) acrylate; ethylenically unsaturated carboxylic acids such as (meth) acrylamide and N-methylol (meth) acrylamide Acid amides and N-substituted compounds thereof; unsaturated alcohols such as allyl alcohol; glycidyl (meth) acrylate, vinyl acetate, vinyl chloride, vinylidene chloride, and the like may be used. Among the acrylic copolymers obtained by copolymerizing these monomers, ethylene-methacrylic acid copolymers are preferable.

  The weight average molecular weight of the acrylic polymer is preferably in the range of 20,000 to 300,000. In addition, the said weight average molecular weight can be calculated | required by measuring with gel permeation chromatography (GPC) and converting with standard polystyrene.

  Examples of the metal ion include one or more metals selected from periodic tables IA, IB, IIA, IIB, IIIA, IIIB, IVA, IVB, VA, VB, VIA, VIB, VIIB, and VIIIB. Among these, zinc ions or sodium ions are preferable, and zinc ions are more preferable. In order to contain a metal ion, it may be added to a high molecular weight compound containing a functional group capable of forming a metal complex in the form of a metal oxide, a metal hydroxide, a metal carbonate, etc., specifically zinc oxide, Sodium hydroxide, sodium carbonate, etc. are used.

  Among these, an ionomer resin in which a part of the carboxyl group of the ethylene-methacrylic acid copolymer forms pseudo-crosslinks between molecules by zinc ions is preferable. Examples of such a commercially available ionomer resin include “HIMILAN” manufactured by Mitsui DuPont Polychemical Co., Ltd.

  In the present invention, the content of the high molecular weight compound containing a functional group capable of forming a metal complex in a material containing a high molecular weight compound containing a functional group capable of forming a metal complex and a metal ion is determined by the yield phenomenon when dicing tape is expanded. It is preferably 90 to 99.9% by mass in terms of being less likely to occur, and the content of metal ions is preferably 0.1 to 10% by mass in the same manner as described above.

  In the present invention, when the substrate layer of the dicing tape is composed of one or more layers, at least one layer is composed of a material including the organic acid or a high molecular weight compound containing a functional group capable of forming a metal complex and a metal ion. The remaining layers are ethylene-methacrylic acid copolymer substrate, styrene-butylene-ethylene copolymer substrate, polyvinyl chloride substrate, ethylene-vinyl acetate copolymer substrate, hydrogenated styrene-butadiene copolymer. It is preferable to include at least one layer selected from a polymer substrate, a polyethylene substrate, a polypropylene substrate, and a polymer substrate obtained by copolymerizing a monomer containing no chlorine.

  It is preferable that the dicing tape includes an adhesive layer that can temporarily fix the adhesive sheet on one side of the base material layer, and the adhesive layer is formed of one or more layers. The pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer is not particularly limited, and examples thereof include a pressure-sensitive adhesive mainly composed of acrylic rubber, urethane resin, silicone resin, etc. Among these, a pressure-sensitive adhesive mainly composed of acrylic rubber. Agents are preferred. Acrylic rubber includes methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, (meth) acrylic acid-2-ethylhexyl, (meth) acrylic acid-2 hydroxy A common acrylic monomer having a polar group or a functional group such as ethyl, (meth) acrylic acid, (meth) acrylic acid-2,3 epoxypropyl, acrylonitrile, etc. can be used as an adhesive for acrylic rubber, more preferably at least Adhesive to photoreactive acrylic rubber having an energy ray irradiation curing part by reacting 2-methacryloyloxyethyl isocyanate with urethane bond to acrylic rubber containing 2 components of acrylic acid-2-ethylhexyl and acrylic acid-2-hydroxyethyl What is included in the agent is good.

  The dicing tape can be prepared by applying and drying an adhesive constituting the adhesive layer on one side of the base material layer. Although the base material layer is usually in the form of a film, it is preferable to adjust the tension at the time of wafer lamination in order to make the elongation uniform when the material constituting the base material layer is formed into a film. In addition, the base material layer may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, etching treatment and the like as necessary. The pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer preferably has an appropriate tack strength obtained by adjusting the ratio of the liquid component and the glass transition temperature (hereinafter referred to as “Tg”) of the high molecular weight component.

  The thickness (A) of the dicing tape is not particularly limited and is appropriately determined depending on the thickness (B) of the adhesive sheet and the application when used as a dicing tape-integrated adhesive sheet. It is preferably 5 to 300 μm, more preferably 10 to 160 μm, in terms of good handleability as a tape. Moreover, it is preferable that the thickness of the adhesive layer in a dicing tape is 5-70 micrometers, and it is preferable that it is 10-30 micrometers. If the thickness of the pressure-sensitive adhesive layer is less than 5 μm, the adhesive strength tends to decrease, and if it exceeds 70 μm, the cost increases, and the wafer is easily damaged during dicing. Moreover, it is preferable that the thickness of the base material layer in a dicing tape is 5-300 micrometers, It is more preferable that it is 40-150 micrometers, It is especially preferable that it is 110-140 micrometers. If the thickness of the base material layer is less than 5 μm, the base material layer may be cut during dicing, and if it exceeds 300 μm, the cost may increase. Furthermore, when a base material layer contains the layer which consists of a material containing the said ionomer resin, it is preferable that the thickness of the layer is 20% or more of the thickness of all the base material layers.

(Adhesive sheet)
The adhesive sheet used in the production method of the present invention adheres the dicing tape and the semiconductor wafer via the adhesive sheet, and the adhesive sheet contains a crosslinkable functional group and is produced using at least a (meth) acrylic ester. It contains a high molecular weight resin (A1), a polyfunctional epoxy resin (A2) having a weight average molecular weight of less than 5,000, a phenol resin (A3), and an inorganic filler (A4).

  Hereinafter, each component which comprises an adhesive sheet is demonstrated.

High molecular weight resin (A1)
The high molecular weight resin (A1) is a high molecular weight resin containing a crosslinkable functional group and produced using at least a (meth) acrylic acid ester. The crosslinkable functional group may be present in the polymer chain or at the end of the polymer chain. Examples of the crosslinkable functional group include an epoxy group, an acryloyl group, a methacryloyl group, a hydroxyl group, a carboxyl group, an isocyanate group, an amino group, and an amide group. Among these, an epoxy group is preferable.

  The high molecular weight resin (A1) is a high molecular weight resin that contains the crosslinkable functional group and is produced using at least a (meth) acrylic acid ester, is difficult to yield during expansion, and can cut a semiconductor wafer and an adhesive sheet. An epoxy group-containing (meth) acrylic copolymer is preferable because it can be easily treated. Examples include an epoxy group-containing (meth) acrylic acid ester copolymer and an epoxy group-containing acrylic rubber. It is particularly preferable to use The acrylic rubber is mainly composed of an acrylic ester, and is a rubber made of, for example, a copolymer of butyl acrylate or ethyl acrylate and acrylonitrile. As such an epoxy group-containing acrylic rubber, for example, trade name: HTR-860P-3 manufactured by Nagase ChemteX Corporation is commercially available.

  The high molecular weight resin (A1) preferably has a Tg of −30 ° C. to 50 ° C. and a weight average molecular weight of 50,000 to 1,000,000 in order to improve the tackiness and strength of the adhesive sheet. If the Tg exceeds 50 ° C., it is disadvantageous in that the flexibility of the adhesive sheet is low. If the Tg is less than −30 ° C., the flexibility of the adhesive sheet is too high. It is inconvenient because it is difficult to do. Further, if the weight average molecular weight is less than 50,000, it is inconvenient in that the heat resistance of the adhesive sheet is gradually reduced, and if the weight average molecular weight exceeds 1,000,000, the fluidity of the adhesive sheet is gradually reduced. It is inconvenient. The high molecular weight resin (A1) is a high molecular weight component having a Tg of −20 ° C. to 40 ° C. and a weight average molecular weight of 100,000 to 1,000,000 from the viewpoints of cutting ability and heat resistance of the adhesive sheet when cutting a semiconductor wafer. It is more preferable that Tg is −10 ° C. to 30 ° C., and a weight average molecular weight is 500,000 to 1,000,000.

  In addition, a weight average molecular weight is a polystyrene conversion value using a calibration curve with standard polystyrene by gel permeation chromatography (GPC), and uses Hitachi Ltd., trade name: L-6000 as a pump. As a product made by Hitachi Chemical Co., Ltd., trade name: Gelpack GL-R440, Gelpack GL-R450 and Gelpack GL-R400M (each 10.7 mm (diameter) x 300 mm) were used in this order to elute Tetrahydrofuran (hereinafter referred to as “THF”) is used as a liquid, and a sample in which 120 mg of sample is dissolved in 5 ml of THF can be measured at a flow rate of 1.75 mL / min.

  It is preferable that content of the said high molecular weight resin (A1) is 20-90 volume% of the whole volume of the composition which comprises an adhesive sheet.

Multifunctional epoxy resin (A2)
The polyfunctional epoxy resin (A2) is an epoxy resin having two or more functional groups and a weight average molecular weight of less than 5,000. The weight average molecular weight is preferably less than 3,000 in that it is difficult to yield during expansion and the semiconductor wafer and the adhesive sheet can be easily cut. The epoxy resin preferably contains at least one selected from trishydroxyphenylmethane type epoxy resin, bisphenol A type epoxy resin, and bisphenol F type epoxy resin. Trishydroxyphenylmethane type epoxy resin and bisphenol A type epoxy resin More preferably. As a commercial product of bisphenol A type epoxy resin, the product name “Epicoat 828” manufactured by Japan Epoxy Resin Co., Ltd. is mentioned. As a commercial product of trishydroxyphenylmethane type epoxy resin, a product name manufactured by Japan Epoxy Resin Co., Ltd. “Epicoat E1032H60” and the like.

  It is preferable that content of the said polyfunctional epoxy resin (A2) is 10-90 mass% of the total mass of the composition which comprises an adhesive sheet.

Phenolic resin (A3)
The phenol resin (A3) is not particularly limited as long as it is a curing agent for the polyfunctional epoxy resin (A2). For example, it is a polyfunctional phenol resin having two or more hydroxyl groups in one molecule, and preferably has a hydroxyl group equivalent. It is a phenol resin of 150 g / eq or more, more preferably at least one selected from a phenol aralkyl resin and a phenol biphenylene resin. Examples of commercially available phenol biphenylene resins include Meiwa Kasei Co., Ltd., trade name “MEH-7851-SS”. Examples of commercially available phenol aralkyl resins include Mitsui Chemicals, Inc., trade name “Mirex XLC”, etc. Is mentioned.

  It is preferable that content of the said phenol resin (A3) is 5-70 mass% of the total mass of the composition which comprises an adhesive sheet.

Inorganic filler (A4)
The inorganic filler (A4) is a B-staged adhesive sheet having reduced breaking strength, reduced elongation at break, improved handling of the composition constituting the adhesive sheet, improved thermal conductivity, adjustment of melt viscosity, thixotropic properties. It mixes for the purpose of grant. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, boron nitride, and crystallinity. Examples thereof include silica, amorphous silica, and antimony oxide. In order to improve thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable. For adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica, Amorphous silica and the like are preferable. In order to improve moisture resistance, alumina, silica, aluminum hydroxide, and antimony oxide are preferable. There is no restriction | limiting in particular about the shape of these inorganic fillers.

It is preferable that content of the said inorganic filler (A4) is 5-70 mass% of the total mass of the composition which comprises an adhesive sheet, and it is preferable that it is 35-60 mass%. When the content increases, problems such as an increase in storage elastic modulus of the adhesive sheet, a decrease in adhesiveness, and a decrease in electrical characteristics due to remaining voids are likely to occur. Therefore, the content is particularly preferably 50% by mass or less. On the other hand, when the content is small, the heat resistance of the adhesive sheet tends to decrease. Moreover, it is preferable that the specific gravity of a filler is 1-10 g / cm < ³ >.

  The adhesive sheet includes the high molecular weight resin (A1), the polyfunctional epoxy resin (A2), the phenol resin (A3), and the inorganic filler (A4). In addition to these, a curing accelerator, a catalyst, an additive, a cup A ring agent or the like may also be included.

  The adhesive sheet can be obtained by mixing and kneading the above components in an organic solvent to prepare a varnish, forming a layer of the varnish on the carrier film, heating and drying, and then removing the carrier film. The above mixing and kneading can be carried out by appropriately combining dispersers such as ordinary stirrers, crackers, three rolls, and ball mills. The heating and drying conditions are not particularly limited as long as the solvent used is sufficiently volatilized, but the heating and drying is usually performed at 60 to 200 ° C. for 0.1 to 90 minutes.

  The organic solvent used for the preparation of the varnish in the production of the adhesive sheet is not particularly limited as long as the material can be uniformly dissolved, kneaded or dispersed, and a conventionally known one can be used. Examples of such an organic solvent include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. in terms of fast drying speed and low price. The amount of the organic solvent used is not particularly limited as long as the residual volatile content after production of the adhesive sheet is 0.01 to 3% by mass based on the total mass, but from the viewpoint of heat resistance reliability, it is based on the total mass. 0.01 to 2.0 mass% is preferable, and 0.01 to 1.5 mass% is more preferable based on the total mass.

  The adhesive sheet may have a single layer structure, or may have a multilayer structure as long as it can be cut. In the case of a multi-layer structure, a plurality of adhesive sheets may be overlapped, or the adhesive sheet and another film may be overlapped. For example, a thermoplastic resin film, a pressure-sensitive adhesive, and a thermosetting resin film may be combined, and an adhesive sheet may be superimposed on both surfaces of the film to form an adhesive sheet having a multilayer structure. Examples of such films include films using thermoplastic resins such as polyimide and polyester, epoxy resins, silicone resins, and mixtures thereof. These films may contain various fillers.

  In the present invention, the adhesive sheet preferably has an elastic modulus of 0.1 to 20 MPa, preferably 0.1 to 10 MPa, as measured by dynamic viscoelasticity at 10 Hz at 60 ° C. of the B-staged adhesive sheet. More preferred is 0.1 to 5 MPa. If the elastic modulus is less than 0.1 MPa, the adhesive sheet tends to peel off or shift from the semiconductor wafer after being attached to the semiconductor wafer. When the elastic modulus is more than 20 MPa, the laminating property to the semiconductor wafer tends to deteriorate. As means for adjusting the elastic modulus to a range of 0.1 to 20 MPa, the content of a filler that contributes to an increase in the elastic modulus and the content of a flexible high molecular weight component such as acrylic rubber that contributes to a reduction in the elastic modulus are appropriately selected. There are adjustments.

  Furthermore, in addition to the above characteristics, the adhesive sheet preferably has heat resistance and moisture resistance required when a semiconductor chip is mounted on a semiconductor element mounting support member.

  Further, when the adhesive sheet is bonded to the pressure-sensitive adhesive layer surface of the dicing tape, it is preferable that an adhesive force by a 90 ° peeling test between the dicing tape and the adhesive sheet is 20 N / m or more and 100 N / m or less. When the adhesive force is 20 N / m or more and 100 N / m or less, when the semiconductor wafer and the adhesive sheet are cut in Step II, the dicing tape and the adhesive sheet are not peeled off, and as a result, the adhesive sheet is easily broken. Furthermore, it is preferable in that the next adhesive sheet and the dicing tape are easily peeled off and the pick-up property of the semiconductor chip is excellent. When the adhesive force is less than 20 N / m, when the dicing tape is stretched, the semiconductor wafer is broken, and when the dicing tape is separated into individual semiconductor chips, the internal stress is released and the interface between the semiconductor chip and the dicing tape is peeled off. However, since warping occurs, there is a tendency that pickup becomes gradually difficult. On the other hand, if the adhesive strength is more than 100 N / m, picking up is difficult and chip cracking is likely to occur. As a means for setting the adhesive force to 20 N / m or more and 100 N / m or less, there is an appropriate adjustment of the content of the liquid epoxy component that contributes to the increase of the adhesive force and the content of the filler that contributes to the reduction of the adhesive force.

  In this invention, there is no restriction | limiting in particular in the thickness (B) of an adhesive sheet, It is preferable that it is 50 micrometers or less, and it is more preferable that it is 1-50 micrometers. When the thickness (B) is less than 1 μm, the stress relaxation effect and adhesiveness tend to gradually become poor. When the thickness (B) exceeds 50 μm, the thickness becomes less economical and the demand for downsizing of the semiconductor device can be met. However, it tends to be difficult to break. In addition, the thickness (B) of the adhesive sheet is more preferably 3 to 40 μm in terms of high adhesiveness and thinning of the semiconductor device, and the package becomes thin and the thickness of the dicing tape (A). However, when the thickness is about 100 μm, the breakability is improved, so that it is more preferably 5 to 20 μm.

  In the production method of the present invention, a laminate in which a dicing tape and a semiconductor wafer are laminated via an adhesive sheet is used, but the ratio between the thickness (C) of the semiconductor wafer and the thickness (B) of the adhesive sheet ( C) / (B) is preferably 2-20. If the adhesive sheet is thin relative to the semiconductor wafer, it is preferable in that the adhesive sheet is easily cut by the impact of cutting the semiconductor wafer. Conversely, if the adhesive sheet is thick, the adhesive sheet remains between the semiconductor chips without being cut. The pick-up property tends to deteriorate. Moreover, the ratio (A) / (B) of the thickness (A) of the dicing tape and the thickness (B) of the adhesive sheet is preferably 2 to 30, and more preferably 10 to 25. . For example, as a combination of the thickness of the adhesive sheet and the dicing tape, dicing tape: 110 μm, adhesive sheet: 10 μm, (A) / (B) in this case is 11, dicing tape: 110 μm, adhesive sheet: 5 μm, in this case (A) / (B) is 22. When (A) / (B) is less than 2, since the adhesive sheet is thicker than the dicing tape, the portion where the adhesive sheet is laminated is less likely to be stretched than the portion of the dicing tape alone. Since it becomes difficult to crack gradually, it is not preferable. In particular, the adhesive sheet protruding from the end of the semiconductor wafer is less likely to break. On the other hand, when (A) / (B) exceeds 30, since the adhesive sheet is thinner than the dicing tape, when the tension is applied to the dicing tape part, the adhesion that protrudes to the end of the semiconductor wafer at an early stage Before the sheet is broken and sufficient tension is applied to the semiconductor wafer, the tension is applied non-uniformly only to the part where the adhesive sheet is cracked. As a result, the adhesive sheet is not easily broken, which is not preferable.

  In the production method of the present invention, the dicing tape and the adhesive sheet may be used individually, but the lamination process to the semiconductor wafer is only required once, and the work efficiency can be improved. It is preferably used as a dicing tape-integrated adhesive sheet in which a dicing tape is laminated. The dicing tape-integrated adhesive sheet can be obtained by laminating the adhesive sheet on the pressure-sensitive adhesive layer surface of the dicing tape. Examples of the method for laminating the adhesive sheet on the pressure-sensitive adhesive layer surface of the dicing tape include printing, a method of pressing the pressure-sensitive adhesive layer surface of the adhesive sheet prepared in advance on the dicing tape, and hot roll laminating. The hot roll laminating method is preferable because it is efficient and efficient. Prior to lamination, the adhesive sheet is preferably formed in a wafer shape in advance. Examples of the method for forming into a wafer shape include a method in which a varnish is applied in advance on another film and dried to form a film-like adhesive, which is then punched into a wafer shape.

  The method of laminating the semiconductor wafer on the adhesive sheet surface is preferably performed at 40 to 100 ° C. in order to reduce the warpage of the semiconductor wafer and improve the handleability at room temperature (25 ° C.).

(Semiconductor device manufacturing method)
Below, each process I-III of the manufacturing method of the semiconductor device of this invention is demonstrated.

  The method for manufacturing a semiconductor device of the present invention is a laminate in which a dicing tape and a semiconductor wafer are laminated via an adhesive sheet, and a step of producing a laminate in which the semiconductor wafer is divided (step I), A step of cutting the semiconductor wafer and the adhesive sheet and then peeling between the adhesive sheet and the dicing tape to obtain a semiconductor chip with an adhesive sheet (Step II), and the semiconductor chip with the adhesive sheet as a semiconductor chip mounting support member And a step of adhering to (step III).

  Hereinafter, a preferred embodiment of a method of manufacturing a semiconductor device according to the present invention will be described with reference to FIGS.

[Step I]
First, in step I, a laminated body in which a dicing tape and a semiconductor wafer are laminated via an adhesive sheet, and the laminated body in which the semiconductor wafer is divided is manufactured.

  In this step I, there are a case where the adhesive sheet and the dicing tape are used individually and a case where the adhesive sheet is integrated as a dicing tape-integrated adhesive sheet, and it is preferable to use the dicing tape-integrated adhesive sheet in terms of work efficiency.

  When the adhesive sheet and the dicing tape are used individually, for example, the step of attaching the adhesive sheet to the semiconductor wafer (step Ia), the step of dividing the semiconductor wafer (step Ib), and the dicing tape is attached to the adhesive sheet. Step (Step Ic) is replaced with (Step Ia)-(Step Ib)-(Step Ic) or (Step Ib)-(Step Ia)-(Step Ic) or (Step Ia)-(Step Ic)-(Step Prepare in the order of Ib). When used as a dicing tape-integrated adhesive sheet, the process of attaching the dicing tape-integrated adhesive sheet to the semiconductor wafer (process Id) and the process of separating the semiconductor wafer (process Ib) are performed as (process Id)-(process Ib) or (step Ib)-(step Id).

  First, the case where an adhesive sheet and a dicing tape are used individually will be described.

  FIG. 1 shows a process of attaching the adhesive sheet 1 to the semiconductor wafer A (process Ia), and FIG. 2 shows a modified region in the wafer by irradiating the cutting line 4 of the semiconductor wafer A with laser light. A process (process Ib) for forming the (scheduled cutting part) 5 and separating the semiconductor wafer A is shown in FIG. 3. A dicing tape 2 composed of an adhesive layer 2 a and a base material layer 2 b is attached to the adhesive sheet 1. The attaching process (process Ic) is shown respectively.

  As the semiconductor wafer A, single crystal silicon, polycrystalline silicon, various ceramics, compound semiconductors such as gallium arsenide, and the like are used. The thickness of the semiconductor wafer is not particularly limited, but is preferably 20 to 1000 μm, and more preferably 30 to 100 μm.

  The temperature at which the adhesive sheet 1 in step Ia is attached to the semiconductor wafer A, that is, the laminating temperature is preferably in the range of 0 ° C. to 170 ° C. In order to reduce the warpage of the semiconductor wafer A, A range of 130 ° C is more preferable, and a range of 20 ° C to 80 ° C is more preferable.

  In addition, when the step Ia is performed after the step Ib, it is preferable to perform the lamination while supporting the semiconductor wafer A so as not to be deformed in order to prevent the semiconductor wafer A from being broken due to stress or deformation in the laminating step.

  As a processing method for dividing the semiconductor wafer A in the step Ib, a method of processing a groove to be a crease (half-cut dicing) without completely cutting the semiconductor wafer A with a dicing cutter or the like, or a planned cutting line Examples include a method of forming a modified region by irradiating laser light inside the upper semiconductor wafer A (stealth dicing), and a method capable of easily cutting the semiconductor wafer A by applying an external force or the like thereafter. . In particular, when the thickness of the semiconductor wafer is 100 μm or less, it is preferable to classify by stealth dicing for the purpose of reducing chipping and reducing cracks.

  In addition, about the method of laser processing of the semiconductor wafer A, the method of Unexamined-Japanese-Patent No. 2002-192370 and Unexamined-Japanese-Patent No. 2003-338467 can be used. As for the apparatus, for example, MAHODICING MACHINE made by Tokyo Seimitsu Co., Ltd. can be used.

  It should be noted that the separation of semiconductor wafers using these methods means a state in which a trigger for cutting has been made in advance so that the semiconductor wafer can be cut by an external force; A state in which the semiconductor wafers are cut by applying an external force, but are in contact with each other, or are adjacent to each other with a slight gap of several μm or less; State adjacent to each other with a gap of μm or more and 1 mm or less.

  In addition, when the semiconductor wafer and the adhesive sheet are cut, when the semiconductor wafer is not completely cut, both are cut at the same time. Also indicates that it is disconnected.

  The semiconductor wafer A may be irradiated with laser light from the front surface of the semiconductor wafer A, that is, the surface on which the circuit is formed, and the back surface of the semiconductor wafer A, that is, the adhesive sheet on which the circuit is not formed. You may carry out from the surface on the side which pastes.

  In the case where the process Ib is performed after the process Ia or the process Id or the process Ic described later, it is possible to irradiate the semiconductor wafer A with laser light from the adhesive sheet 1 or the dicing tape 2 side. It is preferable to use a sheet 1 or a dicing tape 2 that transmits laser light.

  Moreover, it is preferable that the adhesive sheet 1 is different from the dicing tape 2 in transparency and color tone in that it is easy to recognize a portion that could not be cut.

  In the step Ib, for example, the laser beam is irradiated from the surface side of the semiconductor wafer A along the scheduled cutting line 4 by using the above laser processing apparatus to align the condensing point inside the semiconductor wafer A under the following conditions. Then, the modified region 5 is formed inside the semiconductor wafer A. With this modified region 5, the semiconductor wafer A can be cut along the planned cutting line. The modified region 5 is preferably a melt-processed region formed by locally heating and melting the inside of the semiconductor wafer by multiphoton absorption.

(Laser processing conditions)
(A) Semiconductor wafer: silicon wafer (thickness 75 μm, outer diameter 6 inches)
(B) Laser light source: semiconductor laser excitation Nd: YAG laser wavelength: 1064 nm
Laser light spot cross-sectional area: 3.14 × 10 ⁻⁸ cm ²
Oscillation form: Q switch pulse Repeat frequency: 100 kHz
Pulse width: 30ns
Output: 20μJ / pulse Laser light quality: TEM00
Polarization characteristics: Linearly polarized light (C) Condenser lens magnification: 50 times NA: 0.55
Transmittance with respect to laser beam wavelength: 60% (D) Moving speed of mounting table on which semiconductor substrate is mounted: 100 mm / sec In process Ic, dicing tape 2 is bonded to semiconductor wafer of adhesive sheet 1 by a conventionally known method. What is necessary is just to affix on the surface on the opposite side to the surface where A is affixed. The affixing temperature, that is, the laminating temperature is preferably performed in the range of 0 ° C to 60 ° C, more preferably in the range of 10 ° C to 40 ° C, and preferably in the range of 15 ° C to 30 ° C. Further preferred.

  When the step Ic is performed after the step Ib, it is preferable to perform the lamination while supporting the semiconductor wafer A so as not to be deformed in order to prevent the semiconductor wafer A from being cut due to stress or deformation in the laminating step.

  In the method for manufacturing a semiconductor device of the present invention, step I may be performed using a dicing tape-integrated adhesive sheet from the viewpoint of work efficiency. That is, the process of attaching the dicing tape-integrated adhesive sheet to the semiconductor wafer (process Id) and the process of dividing the semiconductor wafer (process Ib) are performed by (process Id)-(process Ib) or (process Ib)-( Prepare in order of step Id).

  4 shows a step of attaching the dicing tape-integrated adhesive sheet 3 to the semiconductor wafer A (step Id), and FIG. 5 shows a step of dividing the semiconductor wafer A by half-cutting with the dicing saw 23 (step Ib). ) Respectively.

  In the semiconductor device manufacturing method, the combination of the method of attaching the adhesive sheet 1 and the dicing tape 2 to the semiconductor wafer A and the dicing method is not particularly limited. From the viewpoint of workability and efficiency, it is most preferable that the dicing tape integrated adhesive sheet 3 is attached to the semiconductor wafer A and the semiconductor wafer is divided by stealth dicing.

  In the step Id, when the dicing tape-integrated adhesive sheet 3 is attached to the semiconductor wafer A, the semiconductor wafer A is attached so that one surface of the adhesive sheet in the dicing tape-integrated adhesive sheet 3 is in contact. The bonding temperature, that is, the laminating temperature is preferably in the range of 20 ° C. to 170 ° C., and in order to reduce the warp of the semiconductor wafer A, it is more preferably in the range of 20 ° C. to 130 ° C., and 20 ° C. A range of ˜60 ° C. is particularly preferred.

[Step II]
In the step II, the semiconductor wafer and the adhesive sheet of the laminate in which the semiconductor wafer produced in the step I is sectioned are cut, and then peeled between the adhesive sheet and the dicing tape to remove the semiconductor chip with the adhesive sheet. obtain.

  In this step II, the semiconductor wafer A and the adhesive sheet 1 can be cut by applying an external force to the dicing tape 2 or the dicing tape-integrated adhesive sheet 3. FIG. 6 shows a process of cutting the semiconductor wafer A and the adhesive sheet 1 by expanding the dicing tape 2, and FIG. 7 shows a conceptual diagram of the state in which the semiconductor wafer A and the adhesive sheet 1 are cut. Show. Further, FIG. 8 shows a process of attaching the dicing tape-integrated adhesive sheet 3 to the semiconductor wafer A (process Id), irradiating the semiconductor wafer A with a laser beam on a planned cutting line, and forming a modified region inside the semiconductor wafer. (Scheduled cutting portion) 5 to form a semiconductor wafer (step Ib), a step of cutting the semiconductor wafer A and the adhesive sheet 1 by applying an external force to the dicing tape 2 or the dicing tape integrated adhesive sheet 3 Shown together.

  The external force applied to the dicing tape 2 or the dicing tape-integrated adhesive sheet 3 is preferably applied in the bending direction or the twisting direction when the semiconductor wafer is divided by half-cut dicing in the step I. Is preferably applied in the pulling (expanding) direction. For example, in the case of a semiconductor wafer divided by stealth dicing, the both ends of the dicing tape 2 or the dicing tape-integrated adhesive sheet 3 are pulled using a commercially available wafer expansion device, and an external force is applied to the semiconductor wafer A and the adhesive sheet 1. Can be cut. In particular, in the case of a semiconductor wafer having a thickness of 100 μm or less, it is preferable to classify by the stealth dicing in the step I for the purpose of reducing chipping and cracking, and in this step II, the semiconductor wafer A and the adhesive sheet 1 are cut by expanding. Is preferably performed.

  More specifically, as shown in FIG. 6, the ring 11 is affixed to and fixed to the peripheral portion of the dicing tape 2 disposed on the stage 13, and then the push-up portion 12 is raised so that the dicing tape 2 is lifted. Apply tension from both ends. When the speed at which the push-up portion is raised is the expanding speed, and the height 14 at which the push-up portion is raised is the amount of expansion, in the present invention, the expand speed is preferably 10 to 1000 mm / second, and 10 to 200 mm. / Second is more preferable, and 50 to 150 mm / second is particularly preferable. When the expanding speed is less than 10 mm / sec, cutting of the semiconductor wafer and the adhesive sheet tends to be difficult, and when it exceeds 1000 mm / sec, the dicing tape tends to be gradually broken. . Further, the amount of expand is preferably 5 to 30 mm, more preferably 10 to 30 mm, and particularly preferably 15 to 20 mm. When the expand amount is less than 5 mm, the semiconductor wafer and the adhesive sheet tend to be difficult to cut, and when the expand amount exceeds 30 mm, the dicing tape tends to be gradually broken. The cutting conditions with the expansion speed of 10 to 1000 mm / second and the expansion amount of 5 to 30 mm are the cutting conditions for the adhesive sheet and the semiconductor wafer that are normally performed, and the present invention uses the adhesive sheet as the semiconductor wafer under the cutting conditions. It becomes possible to cut simultaneously.

  By pulling the dicing tape 2 and applying an external force in this way, a crack occurs in the thickness direction of the semiconductor wafer A starting from the modified region inside the semiconductor wafer A. Furthermore, it reaches the back surface of the adhesive sheet 1 in close contact with the semiconductor wafer A, and the semiconductor wafer A and the adhesive sheet 1 are broken, that is, cut.

  When the expanded amount exceeds 30 mm, it is preferable to use a vinyl chloride substrate as the substrate layer of the dicing tape 2, but when the expanded amount is small, it is preferable to use various polyolefin substrates. .

  Moreover, although an expansion may be performed at room temperature (25 degreeC), you may adjust and adjust between -50 degreeC-100 degreeC as needed. When it cools to 10 degrees C or less, it is preferable at the point which an adhesive sheet becomes weak and a fracture property improves, More preferably, it is 0 degrees C or less, More preferably, it is -10 degrees C or less. When the temperature is lower than −50 ° C., there is a tendency that dew condensation is remarkable, the elongation of the dicing tape 2 is reduced, and the adhesive of the dicing tape 2 becomes hard, causing cracks during expansion and uneven spreading. There is.

  Since the adhesive sheet used in the production method of the present invention has low elasticity and is excellent in breakability due to external stress, it is possible to prevent a decrease in yield due to defective cutting of the adhesive sheet.

  In the case where a UV curable adhesive is used for the adhesive layer of the dicing tape 2, ultraviolet rays are irradiated from the opposite side of the surface where the semiconductor wafer A is attached to the dicing tape 2 before or after the expansion. Cure the adhesive. Thereby, the adhesive force between the UV curable pressure-sensitive adhesive and the adhesive sheet is reduced, and after cutting, the work of picking up the semiconductor chip with the adhesive sheet by peeling between the adhesive sheet and the dicing tape is facilitated.

  In this process II, after cutting a semiconductor wafer and an adhesive sheet, it peels between an adhesive sheet and a dicing tape, and obtains a semiconductor chip with an adhesive sheet. A plurality of individual semiconductor chips with an adhesive sheet are picked up using an adsorption collet 21, a needle rod 22 (see FIG. 9) or the like as shown in FIG. 9 or FIG. 10, and a semiconductor chip with an adhesive sheet is obtained. The adhesive force between the adhesive sheet and the dicing tape is 20 N / m or more and 100 N / m or less in the 90 ° peel test because the adhesive sheet and the dicing tape are easy to peel off and the pick-up property of the semiconductor chip is excellent. Preferably there is.

[Step III]
In step III, the semiconductor chip with an adhesive sheet obtained in step II is bonded to a semiconductor chip mounting support member. In this process III, it mounts on the semiconductor chip mounting part of the supporting member for semiconductor chip mounting, and heat-hardens an adhesive sheet. Heat curing is normally performed between 100-220 degreeC. FIG. 9 or FIG. 10 shows a process of bonding the semiconductor chip 6 with an adhesive sheet to the semiconductor chip mounting support member 7, respectively.

  In the manufacturing method of the present invention, the manufacturing method of the semiconductor device is not limited to the above steps, and may include arbitrary steps. For example, after performing Step Ia or Step Id, before performing Step II, including a step of irradiating the adhesive sheet with ultraviolet rays, infrared rays, or microwaves, or a step of heating or cooling the adhesive sheet. May be. After performing Step III, a wire bonding step, a sealing step, and the like are included as necessary.

  EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not restrict | limited to these.

[Production of dicing tape integrated adhesive sheet]
Example 1
Bisphenol A type epoxy resin (made by Japan Epoxy Resin Co., Ltd., trade name “Epicoat 828”, epoxy equivalent 182-194, weight average molecular weight: 380) 13.0 parts by mass, phenol biphenylene resin (Maywa Kasei Co., Ltd., trade name) "MEH-7851-SS", hydroxyl equivalent: 201-220 g / eq) 26.0 parts by mass, epoxy group-containing acrylic rubber (manufactured by Nagase ChemteX Corporation, trade name "HTR-860P-3", molecular weight: 1 million , Tg: −7 ° C.) 20.0 parts by mass, γ-glycidoxypropyltrimethoxysilane (manufactured by Nippon Unicar Co., Ltd., trade name “NUC A-187”), 0.5 parts by mass, tetraphenylphosphonium tetra (4 -Methylphenyl) borate 0.5 parts by mass and spherical fused silica having an average particle size of 0.5 μm. A composition comprising by weight parts, by stirring and mixing by adding cyclohexanone to obtain an adhesive varnish by vacuum degassing.

  This adhesive varnish was applied onto a 50 μm thick polyethylene terephthalate film (trade name “Teijin Tetron Film” G2, manufactured by Teijin DuPont Films Ltd., surface tension 50 dyne / cm), and heated and dried at 140 ° C. for 5 minutes. A 10 μm-thick adhesive sheet provided with a substrate (polyethylene terephthalate film) was prepared.

  On the other hand, as a dicing tape, a dicing tape (base material) in which an acrylic adhesive (a mixture of acrylic rubber and isocyanate) is applied to a base material of an ionomer resin (Mitsui / DuPont Polychemical Co., Ltd., trade name “HIMILAN 1855”). Layer thickness: 100 μm, pressure-sensitive adhesive layer thickness: 10 μm) were used.

  The said adhesive sheet was laminated | stacked on the adhesive layer surface of the dicing tape, and the dicing tape integrated adhesive sheet of Example 1 was obtained. The dicing tape does not have a yield point during tensile deformation, and the ratio A / B of the thickness A of the dicing tape to the thickness B of the adhesive sheet is 11.

  In addition, the presence or absence of the yield point of the dicing tape used above was measured by the following method.

[Presence / absence of yield point of dicing tape]
Using a universal testing machine (Orientec Co., Ltd., Tensilon UCT-5T type) for a strip-shaped dicing tape with a width of 10 mm and a length of 30 mm, a tensile test is performed at a temperature of 25 ° C. and a tensile speed of 5 mm / min. Measure the stress and strain until the dicing tape breaks, and when the strain is plotted on the X axis and the stress is plotted on the Y axis, the stress value at which the slope dY / dX changes from a positive value to 0 or a negative value What was taken was “with a yield point”, and those where the slope dY / dX did not take a stress value changing from a positive value to 0 or a negative value was taken as “no yield point”.

(Example 2)
Trishydroxyphenylmethane type epoxy resin (Japan Epoxy Resin Co., Ltd., trade name “Epicoat E1032H60”, epoxy equivalent 169 g / eq, weight average molecular weight: 1000) 4.0 parts by mass, phenol aralkyl resin (Mitsui Chemicals, Trade name “Mirex XLC”, hydroxyl group equivalent 175 g / eq) 6.0 parts by mass, epoxy group-containing acrylic rubber (manufactured by Nagase ChemteX Corporation, trade name “HTR-860P-3”, molecular weight: 1 million, Tg: − 7 ° C) 29.0 parts by mass, γ-glycidoxypropyltrimethoxysilane (Nihon Unicar Co., Ltd., trade name “NUC A-187”) 0.5 parts by mass, tetraphenylphosphonium tetra (4-methylphenyl) Spherical fused silica having 0.5 parts by mass of borate and an average particle size of 0.5 μm A composition comprising by weight parts, by stirring and mixing by adding cyclohexanone to obtain an adhesive varnish by vacuum degassing.

  This adhesive varnish was applied onto a 50 μm thick polyethylene terephthalate film (trade name “Teijin Tetron Film” G2, manufactured by Teijin DuPont Films Ltd., surface tension 50 dyne / cm), and heated and dried at 140 ° C. for 5 minutes. A 10 μm-thick adhesive sheet provided with a substrate (polyethylene terephthalate film) was prepared.

  On the other hand, as a dicing tape, a dicing tape (base material) in which an acrylic pressure-sensitive adhesive (a mixture of acrylic rubber and isocyanate) is applied to a base material of ionomer resin (Mitsui / DuPont Polychemical Co., Ltd., trade name “HIMILAN 1855”). Layer thickness: 100 μm, pressure-sensitive adhesive layer thickness: 10 μm) were used.

  The said adhesive sheet was laminated | stacked on the adhesive layer surface of the dicing tape, and the dicing tape integrated adhesive sheet of Example 2 was obtained. The dicing tape does not have a yield point during tensile deformation, and the ratio A / B of the thickness A of the dicing tape to the thickness B of the adhesive sheet is 11.

(Comparative Example 1)
The adhesive sheet used was the same adhesive sheet as in Example 1, and a dicing tape (base material layer) obtained by applying an acrylic pressure-sensitive adhesive (a mixture of acrylic rubber and isocyanate) to a polyethylene film base material prepared by high-pressure polymerization as a dicing tape. A thickness of 80 μm and an adhesive layer thickness of 10 μm) were used. The said adhesive sheet was laminated | stacked on the adhesive layer surface of the dicing tape, and the dicing tape integrated adhesive sheet of the comparative example 1 was obtained. The dicing tape has a yield point at the time of tensile deformation, and the ratio of the thickness A of the dicing tape to the thickness B of the adhesive sheet: A / B is 9.0.

  The dicing tape integrated adhesive sheets obtained in Examples 1 and 2 and Comparative Example 1 were evaluated as follows.

[Evaluation of adhesive strength]
A 10 mm wide dicing tape integrated adhesive sheet and a 300 μm thick semiconductor wafer are bonded together with a hot roll laminator (80 ° C., 0.3 m / min, 0.3 MPa), and then peeled off at the interface between the dicing tape and the adhesive sheet. Thus, 90 degree peel strength when peeled at a pulling speed of 50 mm / min at an angle of 90 ° in an atmosphere of 25 ° C. using a UTM-4-100 type Tensilon made by TOYOBALWIN was obtained. The results are shown in Table 1.

[Evaluation of breakability]
A semiconductor wafer having a thickness of 50 μm and an outer diameter of 12 inches was irradiated with a laser beam to form a modified region inside the semiconductor wafer.

Next, lamination was performed at 60 ° C. using a hot roll laminator (manufactured by DuPont, “Riston (trade name)”) so that the semiconductor wafer and the adhesive sheet of the dicing tape integrated adhesive sheet were in contact with each other. A stainless steel ring was attached to the outer periphery of the dicing tape. Subsequently, the ring was fixed and the dicing tape was expanded by an expanding apparatus, thereby producing a 5 mm square semiconductor chip. In this expanding condition, the expanding speed was 30 mm / second, and the expanding amount was 15 mm. At that time, when the semiconductor wafer and the adhesive sheet were cut at the same time, 90% or more was evaluated as ○ (good breakability), and less than 90% was evaluated as x (poor breakability). did. The results are shown in Table 1.

  From Table 1, it can be seen that in Examples 1 and 2, the adhesive sheet and the semiconductor wafer can be cut simultaneously and excellent in breakability, whereas in Comparative Example 1, it is inferior.

  1: Adhesive sheet, 2: Dicing tape, 2a: Adhesive layer, 2b: Base material layer, 3: Dicing tape integrated adhesive sheet, 4: Cutting planned line, 5: Modified region, 6: Semiconductor chip with adhesive sheet 7: Semiconductor chip mounting support member, 11: Link, 12: Push-up part, 13: Stage, 14: Height of the push-up part (expanded amount), 21: Adsorption collet, 22: Needle rod, 23: Dicing Saw, A: Semiconductor wafer

Claims (13)

A step of producing a laminate in which a dicing tape and a semiconductor wafer are laminated via an adhesive sheet, wherein the semiconductor wafer is divided (step I), and cutting the semiconductor wafer and the adhesive sheet. Then, a step of obtaining a semiconductor chip with an adhesive sheet by peeling between the adhesive sheet and the dicing tape (step II), and a step of adhering the semiconductor chip with an adhesive sheet to a semiconductor chip mounting support member (step III) A method for manufacturing a semiconductor device comprising:
The adhesive sheet contains a crosslinkable functional group and is produced using at least a (meth) acrylic acid ester (A1), a polyfunctional epoxy resin (A2) having a weight average molecular weight of less than 5,000, a phenol resin ( A3), containing an inorganic filler (A4),
A manufacturing method of a semiconductor device, wherein the dicing tape does not have a yield point at the time of tensile deformation.   The polyfunctional epoxy resin (A2) is at least one selected from phenol novolac type epoxy resins, cresol novolac type epoxy resins, bisphenol F type epoxy resins, trishydroxyphenylmethane type epoxy resins, and bisphenol A type epoxy resins. 2. A method of manufacturing a semiconductor device according to 1.   The semiconductor according to claim 1 or 2, wherein the polyfunctional epoxy resin (A2) has a weight average molecular weight of less than 3,000 and is at least one selected from a trishydroxyphenylmethane type epoxy resin and a bisphenol A type epoxy resin. Device manufacturing method.   The method for manufacturing a semiconductor device according to claim 1, wherein the phenol resin (A3) is a polyfunctional phenol resin.   The semiconductor device according to any one of claims 1 to 4, wherein the phenol resin (A3) is a phenol resin having a hydroxyl group equivalent of 150 g / eq or more and is at least one selected from a phenol aralkyl resin and a phenol biphenylene resin. Manufacturing method.   The method of manufacturing a semiconductor device according to claim 1, wherein the dicing tape includes one or more pressure-sensitive adhesive layers and one or more base material layers.   The method for manufacturing a semiconductor device according to claim 6, wherein at least one of the base material layers is made of a material containing a high molecular weight compound containing a functional group capable of forming an organic acid or a metal complex, and a metal ion.   In the material containing a high molecular weight compound containing a functional group capable of forming a metal complex and a metal ion, a part of the carboxyl group of the acrylic copolymer forms a pseudo-crosslink between molecules by a metal cation. The method for manufacturing a semiconductor device according to claim 7, wherein the semiconductor device is a material containing an ionomer resin.   The substrate layer of the dicing tape is an ethylene-methacrylic acid copolymer substrate, a styrene-butylene-ethylene copolymer substrate, a polyvinyl chloride substrate, an ethylene-vinyl acetate copolymer substrate, a hydrogenated styrene- It contains at least 1 layer chosen from the butadiene copolymer base material, the polyethylene base material, the polypropylene base material, and the polymer base material which copolymerized the monomer which does not contain chlorine, The any one of Claims 6-8 characterized by the above-mentioned. The manufacturing method of the semiconductor device as described in any one of Claims 1-3.   The semiconductor device manufacturing method according to claim 1, wherein in the step I, the semiconductor wafer is divided by half-cut dicing or stealth dicing.   The semiconductor wafer having a thickness of 100 μm or less is divided by stealth dicing in the step I, and the semiconductor wafer and the adhesive sheet are cut by expanding in the step II. Semiconductor device manufacturing method.   The laminate in the step I is obtained by laminating a semiconductor wafer on an adhesive sheet using a dicing tape-integrated adhesive sheet obtained by laminating an adhesive sheet and a dicing tape. Item 12. A method for manufacturing a semiconductor device according to any one of Items 1 to 11. A step of producing a laminate in which a dicing tape and a semiconductor wafer are laminated via an adhesive sheet, wherein the semiconductor wafer is divided (step I), and cutting the semiconductor wafer and the adhesive sheet. Then, a step of obtaining a semiconductor chip with an adhesive sheet by peeling between the adhesive sheet and the dicing tape (step II), and a step of adhering the semiconductor chip with an adhesive sheet to a semiconductor chip mounting support member (step III) A dicing tape-integrated adhesive sheet used in Step I of the method for manufacturing a semiconductor device,
The dicing tape-integrated adhesive sheet is obtained by laminating the adhesive sheet and the dicing tape, and the adhesive sheet contains a crosslinkable functional group and is produced using at least a (meth) acrylic ester. (A1), containing a polyfunctional epoxy resin (A2) having a molecular weight of less than 5,000, a phenol resin (A3), and an inorganic filler (A4), and the dicing tape does not have a yield point during tensile deformation. A dicing tape-integrated adhesive sheet, characterized in that:

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