TWI618096B - Insulating resin material - Google Patents

Insulating resin material Download PDF

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Publication number
TWI618096B
TWI618096B TW102137320A TW102137320A TWI618096B TW I618096 B TWI618096 B TW I618096B TW 102137320 A TW102137320 A TW 102137320A TW 102137320 A TW102137320 A TW 102137320A TW I618096 B TWI618096 B TW I618096B
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resin material
insulating resin
skeleton
ppm
material according
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TW102137320A
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TW201423770A (en
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阪內啓之
織壁宏
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味之素股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00Compositions of unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/40Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes epoxy resins
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal

Abstract

本發明所欲解決的問題在於提供尺寸安定性高而且硬化時的翹曲小之絕緣樹脂材料。 The problem to be solved by the present invention is to provide an insulating resin material having high dimensional stability and small warpage at the time of hardening.

本發明之解決手段為一種絕緣樹脂材料,其係含有熱硬化性樹脂、無機填充材及玻璃轉移溫度為30℃以下的高分子樹脂之絕緣樹脂材料,相對於絕緣樹脂材料中的不揮發成分100質量%,前述無機填充材之含量為50~95質量%。 The solution of the present invention is an insulating resin material containing a thermosetting resin, an inorganic filler, and an insulating resin material of a polymer resin having a glass transition temperature of 30 ° C or less, and a nonvolatile component in the insulating resin material. The mass%, the content of the inorganic filler is 50 to 95% by mass.

Description

絕緣樹脂材料 Insulating resin material

本發明關於絕緣樹脂材料。更詳細地,本發明關於使用該絕緣樹脂材料之印刷配線板、晶圓級晶片尺寸封裝等之電路基板。 The present invention relates to an insulating resin material. More specifically, the present invention relates to a circuit board using a printed wiring board of the insulating resin material, a wafer level wafer size package, or the like.

於用於印刷配線板、晶圓級晶片尺寸封裝等的電路基板之絕緣樹脂材料中,為了抑制基板之翹曲,要求彈性模數低之材料。例如,專利文獻1中揭示將含有特定的線狀改性聚醯亞胺樹脂與熱硬化性樹脂之熱硬化性樹脂組成物作為硬化物的彈性模數低之熱硬化性樹脂組成物。然而,如此彈性模數低之絕緣樹脂材料,一般線熱膨脹係數變高而有尺寸安定性差之問題。電路基板由於暴露在如室溫之低溫、如廻焊之高溫等各式各樣的環境下,若線熱膨脹係數高而尺寸安定性差,則電路基板中的絕緣樹脂材料重複膨脹及收縮,結果由於所發生的基板之畸變而產生裂紋。作為壓低線熱膨脹係數之手法,已知於絕緣樹脂材料中摻合大量的無機填充材之方法。然而,若於絕緣樹脂材料中摻合大量的無機填充材,這樣子由於絕緣樹脂材料之彈性 模數變高,而難以抑制基板之翹曲。因此,現狀為滿足低彈性模數與低線熱膨脹係數這兩者之要求的實用之絕緣樹脂材料係未必令人感到滿足。 In an insulating resin material for a circuit board for a printed wiring board, a wafer level wafer size package, or the like, in order to suppress warpage of the substrate, a material having a low modulus of elasticity is required. For example, Patent Document 1 discloses a thermosetting resin composition containing a thermosetting resin composition of a specific linear modified polyimide resin and a thermosetting resin as a cured product having a low modulus of elasticity. However, such an insulating resin material having a low modulus of elasticity generally has a problem that the linear thermal expansion coefficient becomes high and the dimensional stability is poor. The circuit substrate is exposed to various conditions such as low temperature at room temperature, high temperature such as soldering, etc., if the coefficient of thermal expansion of the wire is high and the dimensional stability is poor, the insulating resin material in the circuit substrate repeatedly expands and contracts, resulting in The resulting substrate is distorted to cause cracks. As a method of suppressing the coefficient of thermal expansion of the wire, a method of blending a large amount of an inorganic filler into an insulating resin material is known. However, if a large amount of inorganic filler is blended in the insulating resin material, the elasticity of the insulating resin material is obtained. The modulus becomes high, and it is difficult to suppress the warpage of the substrate. Therefore, the practical insulating resin material which satisfies the requirements of both the low elastic modulus and the low linear thermal expansion coefficient is not necessarily satisfactory.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2006-37083號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-37083

鑒於上述現狀,本發明所欲解決之問題在於提供尺寸安定性高而且硬化時的翹曲小之絕緣樹脂材料。 In view of the above circumstances, the problem to be solved by the present invention is to provide an insulating resin material having high dimensional stability and small warpage at the time of hardening.

為了解決上述問題,本發明者們重複專心致力的檢討,結果令人驚奇地發現:即使於含有熱硬化性樹脂與特定的高分子樹脂之絕緣樹脂材料中,摻合大量的無機填充材時,也抑制絕緣樹脂材料之彈性模數的上升,可得到低彈性模數與低線熱膨脹係數這兩者的特性優異之絕緣樹脂材料。 In order to solve the above problems, the inventors of the present invention have repeatedly conducted intensive review, and as a result, surprisingly found that even when a large amount of inorganic filler is blended in an insulating resin material containing a thermosetting resin and a specific polymer resin, Also, the increase in the elastic modulus of the insulating resin material is suppressed, and an insulating resin material having excellent characteristics of both the low elastic modulus and the low linear thermal expansion coefficient can be obtained.

即,本發明包含以下之內容。 That is, the present invention includes the following contents.

[1]一種絕緣樹脂材料,其係含有熱硬化性樹脂、無機填充材及玻璃轉移溫度為30℃以下的高分子樹脂之絕緣樹脂材料,相對於絕緣樹脂材料中的不揮發成分100質量 %,前述無機填充材之含量為50~95質量%。 [1] An insulating resin material comprising an insulating resin material of a thermosetting resin, an inorganic filler, and a polymer resin having a glass transition temperature of 30 ° C or less, and a mass of 100% of a nonvolatile component in the insulating resin material %, the content of the inorganic filler is 50 to 95% by mass.

[2]如[1]記載之絕緣樹脂材料,其中前述絕緣樹脂材料之硬化物在25℃~150℃的線熱膨脹係數為3~30ppm/℃,而且在150℃~220℃的線熱膨脹係數為5~32ppm/℃,前述絕緣樹脂材料之硬化物在25℃的彈性模數為0.5~14GPa。 [2] The insulating resin material according to [1], wherein the cured product of the insulating resin material has a linear thermal expansion coefficient of from 3 to 30 ppm/° C. at 25° C. to 150° C., and a linear thermal expansion coefficient of from 150° C. to 220° C. 5~32ppm/°C, the cured resin of the insulating resin material has an elastic modulus of 0.5 to 14 GPa at 25 °C.

[3]如[1]記載之絕緣樹脂材料,其中前述絕緣樹脂材料之硬化物在25℃~150℃的線熱膨脹係數為3~10ppm/℃,而且在150℃~220℃的線熱膨脹係數為5~15ppm/℃,前述絕緣樹脂材料之硬化物在25℃的彈性模數為0.5~6GPa。 [3] The insulating resin material according to [1], wherein the cured product of the insulating resin material has a linear thermal expansion coefficient of 3 to 10 ppm/° C. at 25° C. to 150° C., and a linear thermal expansion coefficient of 150° C. to 220° C. 5 to 15 ppm/° C., the cured resin of the insulating resin material has an elastic modulus of 0.5 to 6 GPa at 25 ° C.

[4]如[1]記載之絕緣樹脂材料,其中將前述絕緣樹脂材料之硬化物在25℃~150℃的線膨脹係數當作A(ppm/℃),將在150℃~220℃的線熱膨脹係數當作B(ppm/℃)時,0≦B-A≦15。 [4] The insulating resin material according to [1], wherein the linear expansion coefficient of the cured material of the insulating resin material at 25 ° C to 150 ° C is regarded as A (ppm / ° C), and the line is 150 ° C to 220 ° C When the coefficient of thermal expansion is taken as B (ppm/°C), 0≦BA≦15.

[5]如[1]記載之絕緣樹脂材料,其中將前述絕緣樹脂材料之硬化物在25℃~150℃的線膨脹係數當作A(ppm/℃),將在150℃~220℃的線熱膨脹係數當作B(ppm/℃)時,0≦B-A≦4。 [5] The insulating resin material according to [1], wherein the linear expansion coefficient of the cured material of the insulating resin material at 25 ° C to 150 ° C is regarded as A (ppm / ° C), and the line is 150 ° C to 220 ° C When the coefficient of thermal expansion is taken as B (ppm/°C), 0≦BA≦4.

[6]如[1]記載之絕緣樹脂材料,其中前述熱硬化性樹脂係環氧樹脂。 [6] The insulating resin material according to [1], wherein the thermosetting resin-based epoxy resin.

[7]如[1]記載之絕緣樹脂材料,其中前述熱硬化性樹脂係液狀環氧樹脂。 [7] The insulating resin material according to [1], wherein the thermosetting resin is a liquid epoxy resin.

[8]如[1]記載之絕緣樹脂材料,其中相對於絕緣樹脂 材料中的不揮發成分100質量%,前述熱硬化性樹脂之含量為1~15質量%。 [8] The insulating resin material as described in [1], wherein the insulating resin is relative to the insulating resin The nonvolatile content in the material is 100% by mass, and the content of the thermosetting resin is 1 to 15% by mass.

[9]如[1]記載之絕緣樹脂材料,其中前述無機填充材係矽石。 [9] The insulating resin material according to [1], wherein the inorganic filler is a vermiculite.

[10]如[1]記載之絕緣樹脂材料,其中前述高分子樹脂之數量平均分子量為300~100000。 [10] The insulating resin material according to [1], wherein the polymer resin has a number average molecular weight of 300 to 100,000.

[11]如[1]記載之絕緣樹脂材料,其中前述高分子樹脂之數量平均分子量為8000~20000。 [11] The insulating resin material according to [1], wherein the polymer resin has a number average molecular weight of 8,000 to 20,000.

[12]如[1]記載之絕緣樹脂材料,其中前述高分子樹脂具有由丁二烯骨架、碳酸酯骨架、丙烯酸骨架及矽氧烷骨架中選出的1種以上之骨架。 [12] The insulating resin material according to [1], wherein the polymer resin has one or more kinds of skeletons selected from the group consisting of a butadiene skeleton, a carbonate skeleton, an acrylic skeleton, and a decane skeleton.

[13]如[1]記載之絕緣樹脂材料,其中前述高分子樹脂具有丁二烯骨架、醯亞胺骨架及胺基甲酸酯骨架。 [13] The insulating resin material according to [1], wherein the polymer resin has a butadiene skeleton, a quinone imine skeleton, and a urethane skeleton.

[14]如[1]記載之絕緣樹脂材料,其中相對於絕緣樹脂材料中的不揮發成分100質量%,前述高分子樹脂之含量為1~30質量%。 [14] The insulating resin material according to [1], wherein the content of the polymer resin is from 1 to 30% by mass based on 100% by mass of the nonvolatile component in the insulating resin material.

[15]一種接著薄膜,其係將如[1]~[14]中任一項記載之絕緣樹脂材料在支持體上形成層所成。 [15] A film which is formed by forming a layer of an insulating resin material according to any one of [1] to [14] on a support.

[16]一種薄片狀硬化物,其係將如[1]~[14]中任一項記載之絕緣樹脂材料予以熱硬化所成。 [16] A sheet-like cured product obtained by thermally curing an insulating resin material according to any one of [1] to [14].

[17]如[16]記載之薄片狀硬化物,其係藉由將如[1]~[14]中任一項記載之絕緣樹脂材料在矽晶圓上形成層並使其熱硬化,在矽晶圓上形成薄片狀硬化物時之在25℃的翹曲量為0~5mm者。 [17] The sheet-like cured product according to any one of [1] to [14], wherein the insulating resin material according to any one of [1] to [14] is formed on a tantalum wafer and thermally cured. When the sheet-like cured product is formed on the wafer, the amount of warpage at 25 ° C is 0 to 5 mm.

[18]一種印刷配線板,其係使用如[1]~[14]中任一項記載之絕緣樹脂材料所成。 [18] A printed wiring board obtained by using the insulating resin material according to any one of [1] to [14].

[19]一種印刷配線板,其係在如[16]記載之薄片狀硬化物上形成有導體層者。 [19] A printed wiring board obtained by forming a conductor layer on the sheet-like cured product according to [16].

[20]一種印刷配線板,其係在如[17]記載之薄片狀硬化物上形成有導體層者。 [20] A printed wiring board obtained by forming a conductor layer on the sheet-like cured product according to [17].

[21]一種晶圓級晶片尺寸封裝,其係使用如[1]~[14]中任一項記載之絕緣樹脂材料所成。 [21] A wafer level wafer size package using the insulating resin material according to any one of [1] to [14].

[22]一種晶圓級晶片尺寸封裝,其係在如[16]記載之薄片狀硬化物上形成有導體層者。 [22] A wafer level wafer size package in which a conductor layer is formed on a sheet-like cured product as described in [16].

[23]一種晶圓級晶片尺寸封裝,其係在如[17]記載之薄片狀硬化物上形成有導體層者。 [23] A wafer level wafer size package in which a conductor layer is formed on a sheet-like cured product as described in [17].

本發明提供尺寸安定性高而且硬化時的翹曲小之絕緣樹脂材料。 The present invention provides an insulating resin material which has high dimensional stability and small warpage at the time of hardening.

[實施發明的形態] [Formation of the Invention] [絕緣樹脂材料] [insulating resin material]

本發明之絕緣樹脂材料係含有熱硬化性樹脂、無機填充材及玻璃轉移溫度為30℃以下的高分子樹脂之樹脂組成物,視需要亦可更含有硬化促進劑、其它成分等。以下說明詳細。 The insulating resin material of the present invention contains a thermosetting resin, an inorganic filler, and a resin composition of a polymer resin having a glass transition temperature of 30 ° C or lower, and may further contain a curing accelerator, other components, and the like as necessary. The following description is detailed.

(a)熱硬化性樹脂 (a) Thermosetting resin

作為本發明中使用之熱硬化性樹脂,並沒有特別的限定,可舉出環氧樹脂、酚系樹脂、氰酸酯樹脂、苯并系樹脂等。其中,於鍍敷密接性提高之點,較佳為使用環氧樹脂。 The thermosetting resin used in the present invention is not particularly limited, and examples thereof include an epoxy resin, a phenol resin, a cyanate resin, and benzo. Resin or the like. Among them, in order to improve the adhesion of the plating, it is preferred to use an epoxy resin.

作為環氧樹脂,並沒有特別的限定,較佳為含有在1分子中具有2個以上的環氧基之環氧樹脂。於具體之例中,可舉出雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、雙酚AF型環氧樹脂、苯酚酚醛清漆型環氧樹脂、第三丁基兒茶酚型環氧樹脂、萘型環氧樹脂、伸萘基醚型環氧樹脂、環氧丙基胺型環氧樹脂、環氧丙基酯型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂、蒽型環氧樹脂、線狀脂肪族環氧樹脂、具有丁二烯構造的環氧樹脂、脂環式環氧樹脂、雜環式環氧樹脂、含有螺環的環氧樹脂、環己烷二甲醇型環氧樹脂、三羥甲基型環氧樹脂、鹵化環氧樹脂等。此等係可為1種或2種以上組合而使用。 The epoxy resin is not particularly limited, and preferably contains an epoxy resin having two or more epoxy groups in one molecule. Specific examples include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, bisphenol AF epoxy resin, and phenol novolak epoxy resin. Tributyl catechol epoxy resin, naphthalene epoxy resin, naphthyl ether epoxy resin, epoxy propyl amine epoxy resin, epoxy propyl ester epoxy resin, cresol novolac Type epoxy resin, biphenyl type epoxy resin, bismuth type epoxy resin, linear aliphatic epoxy resin, epoxy resin having butadiene structure, alicyclic epoxy resin, heterocyclic epoxy resin, An epoxy resin containing a spiro ring, a cyclohexanedimethanol type epoxy resin, a trimethylol type epoxy resin, a halogenated epoxy resin, or the like. These may be used in combination of one type or two or more types.

於此等之中,作為環氧樹脂,較佳為使用由雙酚A型環氧樹脂、雙酚F型環氧樹脂、萘型環氧樹脂及具有丁二烯構造的環氧樹脂所成之群組中選出的1種以上。又,由於環氧樹脂含有液狀環氧樹脂,可進一步降低硬化物的彈性模數,減小硬化時之翹曲。作為液狀環氧樹脂,較佳為在1分子中具有2個以上的環氧基,在溫度20℃為液狀之芳香族系環氧樹脂。再者,本發明中所言的芳香族系環氧 樹脂,就是意味在其分子內具有芳香環構造的環氧樹脂。作為環氧樹脂,於使用液狀環氧樹脂之情況,當環氧樹脂全體為100質量份時,較佳使用60~100質量份的液狀環氧樹脂,更佳使用75~100質量份,尤佳使用85~100質量份。作為市售的環氧樹脂之例,可舉出三菱化學(股)製「jER828EL」(液狀雙酚A型環氧樹脂,環氧當量180)、DIC(股)製「HP4032」(液狀萘型環氧樹脂,環氧當量151)等。 Among these, as the epoxy resin, it is preferably made of a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a naphthalene type epoxy resin, and an epoxy resin having a butadiene structure. One or more selected from the group. Further, since the epoxy resin contains a liquid epoxy resin, the elastic modulus of the cured product can be further reduced, and the warpage at the time of curing can be reduced. The liquid epoxy resin is preferably an aromatic epoxy resin having two or more epoxy groups in one molecule and being liquid at a temperature of 20 ° C. Furthermore, the aromatic epoxy described in the present invention A resin is an epoxy resin which has an aromatic ring structure in its molecule. In the case of using a liquid epoxy resin as the epoxy resin, when the total amount of the epoxy resin is 100 parts by mass, it is preferred to use 60 to 100 parts by mass of the liquid epoxy resin, and more preferably 75 to 100 parts by mass. It is especially good to use 85~100 parts by mass. As an example of the commercially available epoxy resin, "jER828EL" (liquid bisphenol A type epoxy resin, epoxy equivalent 180) manufactured by Mitsubishi Chemical Co., Ltd., and "HP4032" manufactured by DIC (liquid) are used. Naphthalene type epoxy resin, epoxy equivalent 151), and the like.

作為酚系樹脂,並沒有特別的限定,例如可舉出苯酚酚醛清漆樹脂、含有聯苯骨架的酚樹脂、含有萘骨架的酚樹脂、含有三骨架的酚樹脂等。作為苯酚酚醛清漆樹脂,例如可舉出DIC(股)製「TD2090」等。作為含有聯苯骨架的酚樹脂,例如可舉出明和化成(股)製「MEH-7700」、「MEH-7810」、「MEH-7851」等。作為含有萘骨架的酚樹脂,例如可舉出日本化藥(股)製「NHN」、「CBN」及「GPH」,新日鐵化學(股)製「SN170」、「SN180」、「SN190」、「SN475」、「SN485」、「SN495」、「SN375」及「SN395」,DIC(股)製「EXB9500」等。作為含有三骨架的酚系硬化劑,例如可舉出DIC(股)製「LA3018」、「LA7052」、「LA7054」、「LA1356」等。 The phenolic resin is not particularly limited, and examples thereof include a phenol novolak resin, a phenol resin containing a biphenyl skeleton, a phenol resin containing a naphthalene skeleton, and three Skeleton phenolic resin, etc. As the phenol novolak resin, for example, "TD2090" manufactured by DIC Co., Ltd., or the like can be given. Examples of the phenol resin containing a biphenyl skeleton include "MEH-7700", "MEH-7810", and "MEH-7851" manufactured by Minghe Chemical Co., Ltd. Examples of the phenol resin containing a naphthalene skeleton include "NHN", "CBN" and "GPH" manufactured by Nippon Kayaku Co., Ltd., and "SN170", "SN180" and "SN190" manufactured by Nippon Steel Chemical Co., Ltd. "SN475", "SN485", "SN495", "SN375" and "SN395", DIC (share) system "EXB9500", etc. As containing three Examples of the phenolic curing agent of the skeleton include "LA3018", "LA7052", "LA7054", and "LA1356" manufactured by DIC Corporation.

作為氰酸酯樹脂,並沒有特別的限定,例如可舉出酚醛清漆型(苯酚酚醛清漆型、烷基苯酚酚醛清漆型等)氰酸酯樹脂、二環戊二烯型氰酸酯樹脂、雙酚型(雙酚A型、雙酚F型、雙酚S型等)氰酸酯樹脂、及此等經一部分三 化之預聚物等。作為氰酸酯樹脂之具體例,例如可舉出雙酚A二氰酸酯、聚苯酚氰酸酯(寡聚(3-亞甲基-1,5-伸苯基氰酸酯))、4,4’-亞甲基雙(2,6-二甲基苯基氰酸酯)、4,4’-亞乙基二苯基二氰酸酯、六氟雙酚A二氰酸酯、2,2-雙(4-氰酸酯)苯基丙烷、1,1-雙(4-氰酸酯苯基甲烷)、雙(4-氰酸酯-3,5-二甲基苯基)甲烷、1,3-雙(4-氰酸酯苯基-1-(甲基亞乙基))苯、雙(4-氰酸酯苯基)硫醚、雙(4-氰酸酯苯基)醚等之2官能氰酸酯樹脂、苯酚酚醛清漆、甲酚酚醛清漆、由含有二環戊二烯構造的酚樹脂等所衍生之多官能氰酸酯樹脂、此等氰酸酯樹脂經一部分三化之預聚物等。此等係可為1種或2種以上組合使用。作為市售的氰酸酯樹脂之例,可舉出苯酚酚醛清漆型多官能氰酸酯樹脂(LONZA日本(股)製之PT30S,氰酸酯當量124)、雙酚A二氰酸酯之一部分或全部經三化而成為三聚物之之預聚物(LONZA日本(股)製之BA230S,氰酸酯當量232)、二環戊二烯構造含有氰酸酯樹脂(LONZA日本(股)製之DT-4000、DT-7000)等。 The cyanate resin is not particularly limited, and examples thereof include a novolac type (phenol novolak type, an alkylphenol novolak type, etc.) cyanate resin, a dicyclopentadiene type cyanate resin, and a double. a phenolic type (bisphenol A type, bisphenol F type, bisphenol S type, etc.) cyanate resin, and a part thereof Prepolymers and the like. Specific examples of the cyanate resin include bisphenol A dicyanate and polyphenol cyanate (oligo(3-methylene-1,5-phenylene)), and 4 , 4'-methylenebis(2,6-dimethylphenyl cyanate), 4,4'-ethylenediphenyl dicyanate, hexafluorobisphenol A dicyanate, 2 , 2-bis(4-cyanate)phenylpropane, 1,1-bis(4-cyanate phenylmethane), bis(4-cyanate-3,5-dimethylphenyl)methane , 1,3-bis(4-cyanate phenyl-1-(methylethylidene))benzene, bis(4-cyanate phenyl) sulfide, bis(4-cyanate phenyl) a bifunctional cyanate resin such as ether, a phenol novolac, a cresol novolak, a polyfunctional cyanate resin derived from a phenol resin containing a dicyclopentadiene structure, or the like, and a cyanate resin thereof through a part of three Prepolymers and the like. These may be used alone or in combination of two or more. Examples of the commercially available cyanate resin include a phenol novolac type polyfunctional cyanate resin (PT30S manufactured by LONZA Japan Co., Ltd., cyanate equivalent 124), and a part of bisphenol A dicyanate. Or all three A prepolymer which is a terpolymer (BA230S manufactured by LONZA Co., Ltd., cyanate equivalent 232), and a dicyclopentadiene structure containing a cyanate resin (DT-4000 manufactured by LONZA Japan Co., Ltd.) , DT-7000) and so on.

作為苯并系樹脂,例如可舉出四國化成(股)製「B-a型苯并」、「B-m型苯并」等。 Benzo The resin is, for example, "Ba-type benzo" manufactured by Shikoku Chemicals Co., Ltd. "Bm type benzophenone "Wait.

熱硬化性樹脂之含量,相對於絕緣樹脂材料中的不揮發成分100質量%,較佳為1~15質量%,更佳為2~13質量%,尤佳為3~11質量%。 The content of the thermosetting resin is preferably from 1 to 15% by mass, more preferably from 2 to 13% by mass, even more preferably from 3 to 11% by mass, based on 100% by mass of the nonvolatile component in the insulating resin material.

(b)無機填充材 (b) Inorganic filler

本發明之絕緣樹脂材料係藉由含有無機填充材,而可使線熱膨脹係數降低。作為無機填充材,並沒有特別的限定,例如可舉出矽石、氧化鋁、硫酸鋇、滑石、黏土、雲母粉、氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、氧化鎂、氮化硼、硼酸鋁、鈦酸鋇、鈦酸鍶、鈦酸鈣、鈦酸鎂、鈦酸鉍、氧化鈦、鋯酸鋇及鋯酸鈣等。其中,較佳為無定形矽石、粉碎矽石、熔融矽石、結晶矽石、合成矽石、中空矽石、球狀矽石等之矽石,從提高填充性之點來看,更佳為熔融矽石、球狀矽石,尤佳為球狀熔融矽石。此等係可為1種或2種以上組合使用。作為市售的球狀熔融矽石之例,可舉出(股)ADMATECHS製「SO-C5」、「SO-C2」、「SO-C1等」。 The insulating resin material of the present invention can reduce the linear thermal expansion coefficient by containing an inorganic filler. The inorganic filler is not particularly limited, and examples thereof include vermiculite, alumina, barium sulfate, talc, clay, mica powder, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, and nitriding. Boron, aluminum borate, barium titanate, barium titanate, calcium titanate, magnesium titanate, barium titanate, titanium oxide, barium zirconate and calcium zirconate. Among them, it is preferably an amorphous vermiculite, a crushed vermiculite, a molten vermiculite, a crystalline vermiculite, a synthetic vermiculite, a hollow vermiculite, a globular vermiculite or the like, and is preferably improved from the viewpoint of improving the filling property. It is a molten vermiculite or a globular vermiculite, and is preferably a spherical molten vermiculite. These may be used alone or in combination of two or more. Examples of the commercially available spherical fused vermiculite include "SO-C5", "SO-C2", and "SO-C1" manufactured by ADMATECHS.

無機填充材之平均粒徑係沒有特別的限定,但從在絕緣層表面之粗化處理後,為了使微細配線之形成成為可能,必須成為低粗糙度之觀點,及使雷射加工所造成的通孔形狀成為良好之觀點來看,較佳為5μm以下,更佳為3μm以下,尤佳為2μm以下,尤較佳為1μm以下,尤更佳為0.8μm以下,特佳為0.6μm以下。另一方面,當使樹脂組成物成為樹脂清漆時,從防止清漆的黏度上升而操作性降低之觀點來看,無機填充材的平均粒徑較佳為0.01μm以上,更佳為0.03μm以上,尤佳為0.05μm以上,尤更佳為0.07μm以上,特佳為0.1μm以上。上述無機填充材之平均粒徑可以米氏(Mie)散射理論為基礎,藉由雷射繞射‧散射法來測定。具體地,可藉由雷射繞射散射 式粒度分布測定裝置,以體積基準作成無機填充材的粒度分布,測定其中位徑當作平均粒徑。測定樣品較佳可使用無機填充材經超音波分散在水中者。作為雷射繞射散射式粒度分布測定裝置,可使用(股)堀場製作所製LA-950等。 The average particle diameter of the inorganic filler is not particularly limited. However, after roughening the surface of the insulating layer, in order to form fine wiring, it is necessary to have a low roughness and to cause laser processing. The viewpoint of the shape of the through hole is preferably 5 μm or less, more preferably 3 μm or less, still more preferably 2 μm or less, still more preferably 1 μm or less, still more preferably 0.8 μm or less, and particularly preferably 0.6 μm or less. On the other hand, when the resin composition is made into a resin varnish, the average particle diameter of the inorganic filler is preferably 0.01 μm or more, and more preferably 0.03 μm or more, from the viewpoint of preventing the viscosity of the varnish from increasing and the workability is lowered. It is particularly preferably 0.05 μm or more, more preferably 0.07 μm or more, and particularly preferably 0.1 μm or more. The average particle diameter of the above inorganic filler can be measured by a laser diffraction ‧ scattering method based on the Mie scattering theory. Specifically, by laser diffraction scattering In the particle size distribution measuring apparatus, the particle size distribution of the inorganic filler is determined on a volume basis, and the median diameter is determined as the average particle diameter. The measurement sample is preferably an inorganic filler which is ultrasonically dispersed in water. As the laser diffraction scattering type particle size distribution measuring apparatus, LA-950 or the like manufactured by Horiba, Ltd. can be used.

無機填充材之含量,為了降低硬化物之線熱膨脹係數,相對於絕緣樹脂材料中的不揮發成分100質量%,較佳為50質量%以上。本發明之絕緣樹脂材料,由於即使提高線熱膨脹係數也可維持低的彈性模數,故無機填充材之含量可提高至60質量%以上、70質量%以上或80質量%以上。另一方面,從防止硬化物變脆之點及使粗化處理後的絕緣層表面成為低粗糙度之點來看,相對於絕緣樹脂材料中的不揮發成分100質量%,無機填充材之含量較佳為95質量%以下,更佳為90質量%以下。 The content of the inorganic filler is preferably 50% by mass or more based on 100% by mass of the nonvolatile component in the insulating resin material in order to reduce the linear thermal expansion coefficient of the cured product. In the insulating resin material of the present invention, since the elastic modulus can be maintained even if the linear thermal expansion coefficient is increased, the content of the inorganic filler can be increased to 60% by mass or more, 70% by mass or more, or 80% by mass or more. On the other hand, from the point of preventing the hardened material from becoming brittle and the surface of the insulating layer after the roughening treatment to be low in roughness, the content of the inorganic filler is 100% by mass relative to the nonvolatile content in the insulating resin material. It is preferably 95% by mass or less, more preferably 90% by mass or less.

無機填充材較佳為被表面處理劑所表面處理,具體地例如更佳為被由胺基矽烷系偶合劑、環氧基矽烷系偶合劑、巰基矽烷系偶合劑、苯乙烯基矽烷系偶合劑、丙烯酸酯矽烷系偶合劑、異氰酸酯矽烷系偶合劑、硫矽烷系偶合劑、乙烯基矽烷系偶合劑、矽烷系偶合劑、有機矽氮烷化合物及鈦酸酯系偶合劑中選出的1種以上之表面處理劑所表面處理。藉此,可提高無機填充材之分散性或耐濕性。 The inorganic filler is preferably surface-treated with a surface treatment agent, and specifically, for example, more preferably an amine decane-based coupling agent, an epoxy decane-based coupling agent, a mercapto decane-based coupling agent, or a styrene-based decane-based coupling agent. One or more selected from the group consisting of an acrylate decane coupling agent, an isocyanate decane coupling agent, a thiodecane coupling agent, a vinyl decane coupling agent, a decane coupling agent, an organic decane compound, and a titanate coupling agent The surface treatment agent is surface treated. Thereby, the dispersibility or moisture resistance of the inorganic filler can be improved.

作為具體的偶合劑之例,可舉出3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、3-胺基丙基二乙氧基甲基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷、N-甲基胺基丙基三甲氧基矽烷、N-(2-胺基乙基)-3-胺基丙基三甲氧基 矽烷、N-(2-胺基乙基)-3-胺基丙基二甲氧基甲基矽烷等之胺基矽烷系偶合劑,3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、3-環氧丙氧基丙基(二甲氧基)甲基矽烷、環氧丙基丁基三甲氧基矽烷、2-(3,4-環氧基環己基)乙基三甲氧基矽烷等之環氧基矽烷系偶合劑,3-巰基丙基三甲氧基矽烷、3-巰基丙基三乙氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、11-巰基十一基三甲氧基矽烷等之巰基矽烷系偶合劑,對苯乙烯基三甲氧基矽烷等之苯乙烯基矽烷系偶合劑,3-丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基二甲氧基矽烷、3-甲基丙烯醯氧基丙基三乙氧基矽烷、3-甲基丙烯醯氧基丙基二乙氧基矽烷等之丙烯酸酯矽烷系偶合劑,3-異氰酸酯丙基三甲氧基矽烷等之異氰酸酯矽烷系偶合劑,雙(三乙氧基矽烷基丙基)二硫化物、雙(三乙氧基矽烷基丙基)四硫化物等之硫矽烷系偶合劑,甲基三甲氧基矽烷、十八基三甲氧基矽烷、苯基三甲氧基矽烷、甲基丙烯醯氧基丙基三甲氧基矽烷、咪唑矽烷、三矽烷、第三丁基三甲氧基矽烷等之矽烷系偶合劑,六甲基二矽氮烷、1,3-二乙烯基-1,1,3,3-四甲基二矽氮烷、六苯基二矽氮烷、三矽氮烷、環三矽氮烷、八甲基環四矽氮烷、六丁基二矽氮烷、六辛基二矽氮烷、1,3-二乙基四甲基二矽氮烷、1,3-二正辛基四甲基二矽氮烷、1,3-二苯基四甲基二矽氮烷、1,3-二甲基四苯基二矽氮烷、1,3-二乙基四甲基二矽氮烷、 1,1,3,3-四苯基-1,3-二甲基二矽氮烷、1,3-二丙基四甲基二矽氮烷、六甲基環三矽氮烷、二甲基胺基三甲基矽氮烷、四甲基二矽氮烷等之有機矽氮烷化合物,鈦酸四正丁酯二聚物、鈦異丙氧基辛烯乙醇酸酯、鈦酸四正丁酯、鈦辛烯乙醇酸酯、二異丙氧基鈦雙(三乙醇胺化物)、二羥基鈦雙乳酸酯、二羥基雙(乳酸銨)鈦、雙(磷酸氫二辛酯)乙烯鈦酸酯、雙(磷酸氫二辛酯)氧基乙酸酯鈦酸酯、三正丁氧基鈦單硬脂酸酯、鈦酸四正丁酯、鈦酸四(2-乙基己基)酯、四異丙基雙(磷酸氫二辛酯)鈦酸酯、四辛基雙(亞磷酸貳十三酯)鈦酸酯、四(2,2-二烯丙氧基甲基-1-丁基)雙(貳十三基)亞磷酸酯鈦酸酯、異丙基參十八醯基鈦酸酯、異丙基三異丙苯基苯基鈦酸酯、異丙基三異硬脂醯基鈦酸酯、異丙基異硬脂醯基二丙烯醯基鈦酸酯、異丙基二甲基丙烯醯基異硬脂醯基鈦酸酯、異丙基三(磷酸氫二辛酯)鈦酸酯、異丙基參十二基苯磺醯基鈦酸酯、異丙基三(磷酸氫二辛酯)鈦酸酯、異丙基三(N-醯胺基乙基‧胺乙基)鈦酸酯等之鈦酸酯系偶合劑等。於此等之中,較佳為胺基矽烷系偶合劑、環氧基矽烷系偶合劑、巰基矽烷系偶合劑、有機矽氮烷化合物,較佳為胺基矽烷系偶合劑。作為市售品之例,可舉出信越化學工業(股)製「KBM403」(3-環氧丙氧基丙基三甲氧基矽烷)、信越化學工業(股)製「KBM803」(3-巰基丙基三甲氧基矽烷)、信越化學工業(股)製「KBE903」(3-胺基丙基三乙氧基矽烷)、信越化學工業(股)製「KBM573」(N-苯基-3-胺基丙基三甲氧基矽烷)、信越化學 工業(股)製「SZ-31」(六甲基二矽氮烷)等。 Specific examples of the coupling agent include 3-aminopropyltrimethoxydecane, 3-aminopropyltriethoxydecane, 3-aminopropyldiethoxymethyldecane, and N- Phenyl-3-aminopropyltrimethoxydecane, N-methylaminopropyltrimethoxydecane, N-(2-aminoethyl)-3-aminopropyltrimethoxydecane, N -Amino decane coupling agent such as -(2-aminoethyl)-3-aminopropyldimethoxymethyl decane, 3-glycidoxypropyltrimethoxydecane, 3-epoxy Propoxypropyltriethoxydecane, 3-glycidoxypropylmethyldiethoxydecane, 3-glycidoxypropyl(dimethoxy)methylnonane, propylene oxide Epoxy decane coupling agent such as butyl trimethoxy decane or 2-(3,4-epoxycyclohexyl)ethyltrimethoxy decane, 3-mercaptopropyltrimethoxy decane, 3-mercapto group a decyl decane coupling agent such as propyl triethoxy decane, 3-mercaptopropyl methyl dimethoxy decane, 11-fluorenyl undecyltrimethoxy decane, or the like, styrene-based trimethoxy decane or the like Vinyl decane coupling agent, 3-propenyloxypropyl trimethoxy decane, 3-methyl Propylene methoxypropyltrimethoxydecane, 3-methylpropenyloxypropyldimethoxydecane, 3-methylpropenyloxypropyltriethoxydecane, 3-methylpropene oxime Acrylate decane coupling agent such as propyl diethoxy decane, isocyanate decane coupling agent such as 3-isocyanate propyl trimethoxy decane, bis(triethoxydecylpropyl) disulfide, double a thiononane coupling agent such as (triethoxydecylpropyl) tetrasulfide, methyltrimethoxydecane, octadecyltrimethoxydecane, phenyltrimethoxydecane, methacryloxypropane Trimethoxy decane, imidazolium, three a decane coupling agent such as decane or tert-butyltrimethoxydecane, hexamethyldiazepine, 1,3-divinyl-1,1,3,3-tetramethyldioxane, and six Phenyldioxane, triazane, cyclotriazane, octamethylcyclotetraazane, hexabutyldiazepine, hexaoctyldioxane, 1,3-diethyl Tetramethyldiazepine, 1,3-di-n-octyltetramethyldiazide, 1,3-diphenyltetramethyldiazepine, 1,3-dimethyltetraphenyl Indole, 1,3-diethyltetramethyldiazepine, 1,1,3,3-tetraphenyl-1,3-dimethyldiazepine, 1,3-dipropyl An organic sulfonium compound such as tetramethyldiazepine, hexamethylcyclotriazane, dimethylaminotrimethylsulfazane or tetramethyldiazepine, tetra-n-butyl titanate Dimer, titanium isopropoxyoctene glycolate, tetra-n-butyl titanate, titanium octene glycolate, diisopropoxy titanium bis(triethanolamine), dihydroxy titanium dilactate, Dihydroxybis(ammonium lactate) titanium, bis(dioctyl phosphate) ethylene titanate, bis(dioctyl phosphate)oxyacetate titanate, tri-n-butoxytitanium monostearate , Tetra-n-butyl acid ester, tetrakis(2-ethylhexyl) titanate, tetraisopropyl bis(dioctyl phosphate) titanate, tetraoctyl bis(phosphonium phosphite) titanate, Tetrakis(2,2-diallyloxymethyl-1-butyl)bis(decyltridecyl)phosphite titanate, isopropyl succinyl titanate, isopropyl triiso Propyl phenyl titanate, isopropyl triisostearyl decyl titanate, isopropyl isostearyl decyl bis decyl decyl titanate, isopropyl dimethyl propylene decyl isostearyl Mercapto titanate, isopropyl tris(dioctyl phosphate) titanate, isopropyl dodecyl benzene sulfonate titanate, isopropyl tris(dioctyl phosphate) titanate A titanate coupling agent such as isopropyl tris(N-nonylaminoethyl ‧ amine ethyl) titanate or the like. Among these, an amino decane coupling agent, an epoxy decane coupling agent, a mercapto decane coupling agent, and an organic decane compound are preferable, and an amino decane coupling agent is preferable. As an example of a commercial product, "KBM403" (3-glycidoxypropyltrimethoxydecane) manufactured by Shin-Etsu Chemical Co., Ltd., and "KBM803" manufactured by Shin-Etsu Chemical Co., Ltd. "KBE903" (3-aminopropyltriethoxydecane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM573" manufactured by Shin-Etsu Chemical Co., Ltd. (N-phenyl-3-) "Aminopropyltrimethoxydecane", "SZ-31" (hexamethyldioxane) manufactured by Shin-Etsu Chemical Co., Ltd., etc.

於無機填充材經由表面處理劑所表面處理後,較佳為加到樹脂組成物中。此時,可進一步提高無機填充材之分散性。 After the inorganic filler is surface-treated with a surface treating agent, it is preferably added to the resin composition. At this time, the dispersibility of the inorganic filler can be further improved.

表面處理方法係沒有特別的限定,可舉出乾式法或濕式法。作為乾式法,於旋轉式混合機中加入無機填充材,邊攪拌邊將表面處理劑的醇溶液或水溶液滴下或噴霧後,更攪拌,藉由篩進行分級。然後,藉由加熱而使表面處理劑與無機填充材脫水縮合,可得到經表面處理劑所表面處理之無機填充材。作為濕式法,邊攪拌無機填充材與有機溶劑之漿體邊添加表面處理劑,於攪拌後,進行過濾、乾燥及篩之分級。然後,藉由加熱使表面處理劑與無機填充材脫水縮合,可得到經表面處理劑所表面處理之無機填充材。再者,亦可使用在樹脂組成物中添加表面處理劑之整體摻合法。 The surface treatment method is not particularly limited, and examples thereof include a dry method or a wet method. As a dry method, an inorganic filler is added to a rotary mixer, and an alcohol solution or an aqueous solution of a surface treatment agent is dropped or sprayed while stirring, and further stirred, and classified by a sieve. Then, the surface treatment agent and the inorganic filler are dehydrated and condensed by heating to obtain an inorganic filler surface-treated with a surface treatment agent. As a wet method, a surface treatment agent is added while stirring the slurry of the inorganic filler and the organic solvent, and after stirring, filtration, drying, and sieving are carried out. Then, the surface treatment agent and the inorganic filler are dehydrated and condensed by heating to obtain an inorganic filler surface-treated with a surface treatment agent. Further, an integral blending method of adding a surface treating agent to the resin composition can also be used.

(c)玻璃轉移溫度為30℃以下的高分子樹脂 (c) Polymer resin with a glass transition temperature of 30 ° C or less

本發明之絕緣樹脂材料係藉由含有玻璃轉移溫度為30℃以下的高分子樹脂,而可降低硬化物的彈性模數,更且可提高導體層與絕緣層之剝離強度。又,玻璃轉移溫度為30℃以下的高分子樹脂係在25℃~220℃之寬廣溫度區域中線熱膨脹係數不易變化,可壓低的硬化物的線熱膨脹係數之變異差。因此,玻璃轉移溫度更佳為20℃以下,尤佳為10℃以下。玻璃轉移溫度之下限值係沒有特別的限定 ,但一般為-30℃以上。 In the insulating resin material of the present invention, by containing a polymer resin having a glass transition temperature of 30 ° C or lower, the elastic modulus of the cured product can be lowered, and the peeling strength between the conductor layer and the insulating layer can be improved. Further, in the polymer resin having a glass transition temperature of 30 ° C or less, the linear thermal expansion coefficient is not easily changed in a wide temperature range of 25 ° C to 220 ° C, and the linear thermal expansion coefficient of the hardened material which can be depressed is poor. Therefore, the glass transition temperature is more preferably 20 ° C or lower, and particularly preferably 10 ° C or lower. The lower limit of the glass transition temperature is not particularly limited , but generally above -30 °C.

作為玻璃轉移溫度為30℃以下的高分子樹脂,並沒有特別的限定,可舉出具有丁二烯骨架、醯胺骨架、醯亞胺骨架、縮醛骨架、碳酸酯骨架、酯骨架、胺基甲酸酯骨架、丙烯酸骨架或矽氧烷骨架等之高分子樹脂。其中,從更具有柔軟性、密接性之點來看,較宜使用具有由丁二烯骨架、碳酸酯骨架、丙烯酸骨架及矽氧烷骨架中選出的1種以上之骨架之高分子樹脂,更且於提高耐熱性與相溶性之點,更佳為具有由丁二烯骨架、碳酸酯骨架、丙烯酸骨架及矽氧烷骨架中選出的1種以上之骨架,而且具有由醯胺骨架、醯亞胺骨架及胺基甲酸酯骨架中選出的1種以上之骨架之高分子樹脂。更佳為具有丁二烯骨架、醯亞胺骨架及胺基甲酸酯骨架之高分子樹脂,具有丙烯酸骨架之高分子樹脂,以及具有醯亞胺骨架及矽氧烷骨架之高分子樹脂。又,於具有丁二烯骨架之高分子樹脂中,高分子樹脂中的丁二烯骨架之含量較佳為45~90質量%(更佳為60~80質量%)。於具有矽氧烷骨架之高分子樹脂中,高分子中的矽氧烷骨架之含量較佳為40~80質量%(更佳為50~75質量%)。 The polymer resin having a glass transition temperature of 30° C. or lower is not particularly limited, and examples thereof include a butadiene skeleton, a guanamine skeleton, a quinone imine skeleton, an acetal skeleton, a carbonate skeleton, an ester skeleton, and an amine group. A polymer resin such as a formate skeleton, an acrylic skeleton or a siloxane skeleton. Among them, from the viewpoint of more flexibility and adhesion, it is preferred to use a polymer resin having one or more kinds of skeletons selected from a butadiene skeleton, a carbonate skeleton, an acrylic skeleton, and a siloxane skeleton. Further, in order to improve heat resistance and compatibility, it is more preferable to have one or more kinds of skeletons selected from a butadiene skeleton, a carbonate skeleton, an acrylic skeleton, and a decane skeleton, and have a ruthenium skeleton and a ruthenium skeleton. A polymer resin of one or more kinds of skeletons selected from an amine skeleton and a urethane skeleton. More preferably, it is a polymer resin having a butadiene skeleton, a quinone imine skeleton, and a urethane skeleton, a polymer resin having an acrylic skeleton, and a polymer resin having a quinone imine skeleton and a siloxane skeleton. Further, in the polymer resin having a butadiene skeleton, the content of the butadiene skeleton in the polymer resin is preferably from 45 to 90% by mass (more preferably from 60 to 80% by mass). In the polymer resin having a siloxane skeleton, the content of the siloxane skeleton in the polymer is preferably 40 to 80% by mass (more preferably 50 to 75% by mass).

此處,上述高分子樹脂的玻璃轉移溫度之測定係可如以下地進行。將高分子樹脂塗佈在PET薄膜上,於180℃加熱90分鐘而使溶劑乾燥,成為薄膜形狀。將該薄膜切斷成寬度約5mm、長度約15mm之試驗片,使用熱機械分析裝置SII奈米科技股份有限公司製「EXSTAR TMA/SS6000」,以拉伸加重法進行熱機械分析。具體地,將試驗片安裝在前述裝置後,於荷重1g、升溫速度5℃/分鐘之測定條件下連續地測定2次,自第2次之測定來算出Tg。 Here, the measurement of the glass transition temperature of the above polymer resin can be carried out as follows. The polymer resin was applied onto a PET film, and heated at 180 ° C for 90 minutes to dry the solvent to have a film shape. The film was cut into test pieces having a width of about 5 mm and a length of about 15 mm, and a thermomechanical analyzer SII Nano Technology Co., Ltd. "EXSTAR" was used. TMA/SS6000", thermomechanical analysis by tensile weighting. Specifically, after the test piece was attached to the above apparatus, the measurement was continuously performed twice under the measurement conditions of a load of 1 g and a temperature increase rate of 5 ° C/min, and Tg was calculated from the second measurement.

上述高分子樹脂之數量平均分子量較佳為300~100000之範圍,更佳為800~80000之範圍,尤佳為1500~60000之範圍,尤更佳為5000~40000之範圍,特佳為8000~20000之範圍。藉由使數量平均分子量成為此範圍,可兼顧絕緣樹脂材料中的相溶性或柔軟性。再者,本發明中的數量平均分子量係以凝膠滲透層析(GPC)法(聚苯乙烯換算)測定。GPC法所測定的數量平均分子量,具體地可使用(股)島津製作所製LC-9A/RID-6A作為測定裝置,使用昭和電工(股)公司製Shodex K-800P/K-804L/K-804L作為管柱,使用氯仿等作為移動相,於管柱溫度40℃進行測定,使用標準聚苯乙烯的校正曲線來算出。 The number average molecular weight of the above polymer resin is preferably in the range of 300 to 100,000, more preferably in the range of 800 to 80,000, particularly preferably in the range of 1,500 to 60,000, and more preferably in the range of 5,000 to 40,000, particularly preferably 8000. The scope of 20000. By setting the number average molecular weight to this range, compatibility or flexibility in the insulating resin material can be achieved. Further, the number average molecular weight in the present invention is measured by a gel permeation chromatography (GPC) method (in terms of polystyrene). For the number average molecular weight measured by the GPC method, LC-9A/RID-6A manufactured by Shimadzu Corporation can be used as a measuring device, and Shodex K-800P/K-804L/K-804L manufactured by Showa Denko Co., Ltd. can be used. As a column, chloroform or the like was used as a mobile phase, and the column temperature was measured at 40 ° C, and was calculated using a calibration curve of standard polystyrene.

作為具體例,可舉出具有丁二烯骨架的高分子樹脂(日本曹達(股)製「G-1000」、「G-3000」、「GI-1000」、「GI-3000」、出光石油化學(股)製「R-45EPI」、DAICEL化學工業(股)製「PB3600」、「Epofriend AT501」、Gray Valley公司製「Ricon130」、「Ricon142」、「Ricon150」、「Ricon 657」、「Ricon130MA」)、具有丁二烯骨架與聚醯亞胺骨架之高分子樹脂(日本特開2006-37083號公報記載之高分子樹脂)、具有丙烯酸骨架之高分子樹脂(Nagase Chemtex(股)製「SG-P3」、「SG-600LB」 、「SG-280」、「SG-790」、「SG-K2」、根上工業(股)製「SN-50」、「AS-3000E」、「ME-2000」)等。 Specific examples include a polymer resin having a butadiene skeleton ("G-1000", "G-3000", "GI-1000", "GI-3000" manufactured by Nippon Soda Co., Ltd., and Idemitsu Petrochemical "R-45EPI" system, "PB3600" and "Epofriend AT501" made by DAICEL Chemical Industry Co., Ltd., "Ricon130", "Ricon142", "Ricon150", "Ricon 657" and "Ricon130MA" manufactured by Gray Valley Co., Ltd. A polymer resin having a butadiene skeleton and a polyimine skeleton (polymer resin described in JP-A-2006-37083) and a polymer resin having an acrylic skeleton ("Ag-" manufactured by Nagase Chemtex Co., Ltd. P3", "SG-600LB" "SG-280", "SG-790", "SG-K2", "SN-50", "AS-3000E" and "ME-2000").

上述高分子樹脂之含量,為了降低硬化物之彈性模數,相對於絕緣樹脂材料中的不揮發成分100質量%,較佳為1質量%以上,更佳為3質量%以上,尤佳為5質量%以上。另一方面,從於不損害樹脂清漆的相溶性下可製作均勻的硬化物之觀點來看,上述高分子樹脂之含量,相對於絕緣樹脂材料中的不揮發成分100質量%,較佳為30質量%以下,更佳為25質量%以下,尤佳為20質量%以下。 In order to reduce the elastic modulus of the cured product, the content of the polymer resin is preferably 1% by mass or more, more preferably 3% by mass or more, and particularly preferably 5% by mass based on 100% by mass of the nonvolatile component in the insulating resin material. More than % by mass. On the other hand, the content of the polymer resin is preferably 30% by mass based on 100% by mass of the nonvolatile component in the insulating resin material, from the viewpoint of producing a uniform cured product without impairing the compatibility of the resin varnish. The mass% or less is more preferably 25% by mass or less, and particularly preferably 20% by mass or less.

(d)硬化促進劑 (d) hardening accelerator

本發明之絕緣樹脂材料係藉由更含有硬化促進劑,而可使熱硬化性樹脂高效率地硬化。作為硬化促進劑,並沒有特別的限定,可舉出咪唑系硬化促進劑、胺系硬化促進劑、胍系硬化促進劑、鏻系硬化促進劑等。 The insulating resin material of the present invention can efficiently cure the thermosetting resin by further containing a curing accelerator. The curing accelerator is not particularly limited, and examples thereof include an imidazole-based curing accelerator, an amine-based curing accelerator, an lanthanum-based curing accelerator, and an lanthanum-based curing accelerator.

作為咪唑系硬化促進劑,例如可舉出2-甲基咪唑、2-十一基咪唑、2-十七基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰基乙基-2-甲基咪唑、1-氰基乙基-2-十一基咪唑、1-氰基乙基-2-乙基-4-甲基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-十一基咪唑鎓偏苯三酸酯、1-氰基乙基-2-苯基咪唑鎓偏苯三酸酯、2,4-二胺基-6-[2’-甲基 咪唑基-(1’)]-乙基-s-三、2,4-二胺基-6-[2’-十一基咪唑基-(1’)]-乙基-s-三、2,4-二胺基-6-[2’-乙基-4’-甲基咪唑基-(1’)]-乙基-s-三、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三異三聚氰酸加成物、2-苯基咪唑異三聚氰酸加成物、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5羥基甲基咪唑、2,3-二氫-1H-吡咯并[1,2-a]苯并咪唑、1-十二基-2-甲基-3-苄基咪唑鎓氯化物、2-甲基咪唑啉、2-苯基咪唑啉等之咪唑化合物及咪唑化合物與環氧樹脂之加成物等。 Examples of the imidazole-based hardening accelerator include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methylimidazole. 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1 -benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4 -methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidin trimellitate, 1-cyanoethyl-2-phenylimidazole Triammonium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-three 2,4-Diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-s-three 2,4-Diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-three 2,4-Diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-three Iso-cyanuric acid adduct, 2-phenylimidazolium isocyanurate adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxyl Methylimidazole, 2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methyl An imidazole compound such as imidazoline or 2-phenylimidazoline, an adduct of an imidazole compound and an epoxy resin, or the like.

作為胺系硬化促進劑,例如可舉出三乙胺、三丁胺等之三烷基胺、4-二甲基胺基吡啶、苄基二甲基胺、2,4,6-三(二甲基胺基甲基)苯酚、1,8-二氮雜雙環[5.4.0]-7-十一烯(以下簡稱DBU)等之胺化合物等。 Examples of the amine-based curing accelerator include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, and 2,4,6-tri (two). An amine compound such as methylaminomethyl)phenol or 1,8-diazabicyclo[5.4.0]-7-undecene (hereinafter abbreviated as DBU).

作為胍系硬化促進劑,例如可舉出氰胍、1-甲基胍、1-乙基胍、1-環己基胍、1-苯基胍、1-(鄰甲苯基)胍、二甲基胍、二苯基胍、三甲基胍、四甲基胍、五甲基胍、1,5,7-三氮雜雙環[4.4.0]癸-5-烯、7-甲基-1,5,7-三氮雜雙環[4.4.0]癸-5-烯、1-甲基雙胍、1-乙基雙胍、1-正丁基雙胍、1-正十八基雙胍、1,1-二甲基雙胍、1,1-二乙基雙胍、1-環己基雙胍、1-烯丙基雙胍、1-苯基雙胍、1-(鄰甲苯基)雙胍等。 Examples of the oxime-based hardening accelerator include cyanogen, 1-methyl hydrazine, 1-ethyl hydrazine, 1-cyclohexyl hydrazine, 1-phenyl fluorene, 1-(o-tolyl) fluorene, and dimethyl group. Anthracene, diphenyl hydrazine, trimethyl hydrazine, tetramethyl hydrazine, pentamethyl hydrazine, 1,5,7-triazabicyclo[4.4.0]non-5-ene, 7-methyl-1, 5,7-triazabicyclo[4.4.0]non-5-ene, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n-octadecylbiguanide, 1,1- Dimethyl biguanide, 1,1-diethyl biguanide, 1-cyclohexyl biguanide, 1-allyl biguanide, 1-phenylbiguanide, 1-(o-tolyl)biguanide, and the like.

作為鏻系硬化促進劑,例如可舉出三苯基膦、硼酸鏻化合物、四苯基鏻四苯基硼酸鹽、正丁基鏻四苯基硼酸鹽、四丁基鏻癸酸鹽、(4-甲基苯基)三苯基鏻硫氰酸鹽、四 苯基鏻硫氰酸鹽、丁基三苯基鏻硫氰酸鹽等。 Examples of the oxime-based hardening accelerator include triphenylphosphine, lanthanum borate, tetraphenylphosphonium tetraphenyl borate, n-butyl fluorene tetraphenyl borate, and tetrabutyl citrate. -methylphenyl)triphenylphosphonium thiocyanate, four Phenylguanidine thiocyanate, butyltriphenylphosphonium thiocyanate, and the like.

使用硬化促進劑時,硬化促進劑之使用量,相對於熱硬化性樹脂100質量份,較佳為0.5~5質量份,更佳為1~3質量份。 When the curing accelerator is used, the amount of the curing accelerator to be used is preferably 0.5 to 5 parts by mass, more preferably 1 to 3 parts by mass, per 100 parts by mass of the thermosetting resin.

(e)其它成分 (e) Other ingredients

於本發明之絕緣樹脂材料中,在不損害本發明的效果之範圍內,視需要可摻合其它成分。作為其它成分,例如可舉出矽粉、尼龍粉、氟粉、橡膠粒子等之有機填充劑、歐魯本(Orben)、本頓(benton)等之增黏劑、聚矽氧系、氟系、高分子系之消泡劑或均平劑,噻唑系、三唑系、矽烷偶合劑等之密接性賦予劑、酞花青藍、酞花青綠、碘綠、雙偶氮黃、碳黑等之著色劑、有機磷系難燃劑、有機系含氮的磷化合物、氮化合物、聚矽氧系難燃劑、金屬氫氧化物等之難燃劑等。 In the insulating resin material of the present invention, other components may be blended as needed within the range not impairing the effects of the present invention. Examples of other components include organic fillers such as strontium powder, nylon powder, fluorine powder, and rubber particles, tackifiers such as Orben and Benton, and polyfluorene-based and fluorine-based compounds. , a defoaming agent or a leveling agent for a polymer system, an adhesion imparting agent such as a thiazole system, a triazole system or a decane coupling agent, a phthalocyanine blue, a phthalocyanine green, an iodine green, a bisazo yellow, a carbon black, or the like. A coloring agent, an organic phosphorus-based flame retardant, an organic nitrogen-containing phosphorus compound, a nitrogen compound, a polyoxygenated flame retardant, a flame retardant such as a metal hydroxide, and the like.

本發明之絕緣樹脂材料係可藉由適宜混合上述成分,而且視需要藉由三輥、球磨機、珠磨機、砂磨機等之混煉手段、或超級混合機、行星式混合機等之攪拌手段,進行混煉或混合而調製。又,亦可更添加有機溶劑而調製成為樹脂清漆。 The insulating resin material of the present invention can be suitably mixed by the above-mentioned components, and if necessary, by a mixing means such as a three-roller, a ball mill, a bead mill, a sand mill, or the like, or a super mixer or a planetary mixer. The means are prepared by mixing or mixing. Further, an organic solvent may be further added to prepare a resin varnish.

本發明之絕緣樹脂材料雖然提高硬化物的尺寸安定性,但是由於可發揮能減小硬化物的翹曲之優異的性能,故適合使用作為將絕緣樹脂材料予以熱硬化而成之薄片狀硬化物。再者,所謂的薄片狀硬化物,只要是使絕緣樹脂材 料熱硬化成薄片狀者即可,層合於電路基板者亦成為薄片狀硬化物。 Although the insulating resin material of the present invention improves the dimensional stability of the cured product, it is excellent in performance for reducing the warpage of the cured product, and therefore it is suitable to use a sheet-like cured product which is obtained by thermally hardening the insulating resin material. . Furthermore, the so-called flaky cured material is as long as it is an insulating resin material. The material may be heat-hardened into a sheet, and the laminate may be a sheet-like cured product.

本發明的絕緣樹脂材料之硬化物,為了提高硬化物的尺寸安定性,在25℃~150℃的線熱膨脹係數為3~30ppm/℃,而且在150℃~220℃的線熱膨脹係數為5~32ppm/℃者較佳。在25℃~150℃的線熱膨脹係數之上限值更佳為25ppm/℃以下,尤佳為20ppm/℃以下,尤更佳為15ppm/℃以下,特佳為10ppm/℃以下。另一方面,在25℃~150℃的線熱膨脹係數之下限值係沒有特別的限定,為3ppm/℃以上、4ppm/℃以上、5ppm/℃以上等。又,在150℃~220℃的線熱膨脹係數之上限值更佳為30ppm/℃以下,尤佳為25ppm/℃以下,尤更佳為20ppm/℃以下,特佳為15ppm/℃以下。另一方面,在150℃~220℃的線熱膨脹係數之下限值係沒有特別的限定,為5ppm/℃以上、6ppm/℃以上、7ppm/℃以上等。 In order to improve the dimensional stability of the cured product, the cured product of the insulating resin material of the present invention has a linear thermal expansion coefficient of 3 to 30 ppm/° C. at 25° C. to 150° C., and a linear thermal expansion coefficient of 5° at 150° C. to 220° C. 32 ppm / ° C is preferred. The upper limit of the linear thermal expansion coefficient at 25 ° C to 150 ° C is preferably 25 ppm / ° C or less, more preferably 20 ppm / ° C or less, particularly preferably 15 ppm / ° C or less, particularly preferably 10 ppm / ° C or less. On the other hand, the lower limit of the linear thermal expansion coefficient at 25 ° C to 150 ° C is not particularly limited, and is 3 ppm / ° C or more, 4 ppm / ° C or more, 5 ppm / ° C or more. Further, the upper limit of the linear thermal expansion coefficient at 150 ° C to 220 ° C is more preferably 30 ppm / ° C or less, particularly preferably 25 ppm / ° C or less, more preferably 20 ppm / ° C or less, and particularly preferably 15 ppm / ° C or less. On the other hand, the lower limit of the linear thermal expansion coefficient at 150 ° C to 220 ° C is not particularly limited, and is 5 ppm / ° C or more, 6 ppm / ° C or more, 7 ppm / ° C or more.

本發明的絕緣樹脂材料之硬化物,為了減小在25℃~150℃且150℃~220℃中的線熱膨脹係數之變動,進一步提高硬化物的尺寸安定性,當將在25℃~150℃的線膨脹係數作為A(ppm/℃),將在150℃~220℃的線熱膨脹係數作為B(ppm/℃)時,較佳為0≦B-A≦15,更佳為0≦B-A≦12,尤佳為0≦B-A≦9,尤更佳為0≦B-A≦6,特佳為0≦B-A≦4。 The cured product of the insulating resin material of the present invention further increases the dimensional stability of the cured product in order to reduce the linear thermal expansion coefficient in the range of 25 ° C to 150 ° C and 150 ° C to 220 ° C, and will be at 25 ° C to 150 ° C. The coefficient of linear expansion is taken as A (ppm/°C), and when the coefficient of linear thermal expansion at 150 ° C to 220 ° C is taken as B (ppm / ° C), it is preferably 0 ≦ BA ≦ 15, more preferably 0 ≦ BA ≦ 12, It is especially good for 0≦BA≦9, especially for 0≦BA≦6, and especially for 0≦BA≦4.

本發明的絕緣樹脂材料之硬化物,為了減小硬化物之翹曲,在25℃的彈性模數較佳為0.5~14GPa。在25℃的 彈性模數之上限值更佳為12GPa以下,尤佳為10GPa以下,尤更佳為8GPa以下,特佳為6GPa以下。另一方面,在25℃的彈性模數之下限值係沒有特別的限定,為1GPa以上、2GPa以上、3GPa以上。 In the cured product of the insulating resin material of the present invention, the elastic modulus at 25 ° C is preferably 0.5 to 14 GPa in order to reduce the warpage of the cured product. At 25 ° C The upper limit of the elastic modulus is more preferably 12 GPa or less, particularly preferably 10 GPa or less, particularly preferably 8 GPa or less, and particularly preferably 6 GPa or less. On the other hand, the lower limit of the elastic modulus at 25 ° C is not particularly limited, and is 1 GPa or more, 2 GPa or more, and 3 GPa or more.

對於本發明的薄片狀硬化物之翹曲量,如以下地確認。準備厚度100μm、直徑100mm的圓形矽晶圓,在矽晶圓上形成絕緣樹脂材料之層,使熱硬化而在矽晶圓上形成薄片狀硬化物。其次,將於矽晶圓上形成有薄片狀硬化物的層合物於室溫(25℃)下,在平坦的桌上,使矽晶圓成為下面,自硬化物之上,以手指按壓一端。藉由測定對角線上的矽晶圓端部與平坦的桌上之距離,可求得層合物的翹曲量。該層合物在25℃的翹曲量較佳為0~5mm。 The amount of warpage of the sheet-like cured product of the present invention was confirmed as follows. A circular tantalum wafer having a thickness of 100 μm and a diameter of 100 mm was prepared, and a layer of an insulating resin material was formed on the tantalum wafer to be thermally cured to form a sheet-like cured product on the tantalum wafer. Next, a laminate having a sheet-like cured product formed on the tantalum wafer is placed at a room temperature (25 ° C) on a flat table so that the tantalum wafer becomes the lower surface, and the hardened object is pressed against the end with a finger. . The amount of warpage of the laminate can be determined by measuring the distance between the end of the tantalum wafer on the diagonal and the flat table. The amount of warpage of the laminate at 25 ° C is preferably 0 to 5 mm.

作為本發明的絕緣樹脂材料之形態,並沒有特別的限定,可適用於接著薄膜、印刷配線板或晶圓級晶片尺寸封裝等之電路基板。本發明的絕緣樹脂材料亦可以清漆狀態塗佈在電路基板上而形成絕緣層,但工業上一般較佳為以接著薄膜之形態使用。 The form of the insulating resin material of the present invention is not particularly limited, and can be applied to a circuit board such as a film, a printed wiring board, or a wafer-level wafer size package. The insulating resin material of the present invention may be applied to a circuit board in a varnish state to form an insulating layer, but it is generally preferred to use it in the form of a film in the industry.

[接著薄膜] [Next film]

本發明之接著薄膜係可藉由本業者中眾所周知之方法,例如於有機溶劑中溶解絕緣樹脂材料而調製樹脂清漆,使用口模塗佈機等,將此樹脂清漆塗佈於支持體上,更藉由加熱或熱風噴吹等而使有機溶劑乾燥,藉由在支持體上形成樹脂組成物層,可製造成為在支持體上形成有絕緣樹 脂材料之層的接著薄膜。 The adhesive film of the present invention can be prepared by dissolving an insulating resin material in an organic solvent, for example, by dissolving an insulating resin material in an organic solvent, and applying the resin varnish to a support by using a die coater or the like. The organic solvent is dried by heating or hot air blowing or the like, and by forming a resin composition layer on the support, it is possible to manufacture an insulating tree formed on the support. A film of the layer of the lipid material.

作為有機溶劑,例如可舉出丙酮、甲基乙基酮、環己酮等之酮類,醋酸乙酯、醋酸丁酯、醋酸溶纖劑、丙二醇單甲基醚乙酸酯、卡必醇乙酸酯等之乙酸酯類,溶纖劑、丁基卡必醇等之卡必醇類,甲苯、二甲苯等之芳香族烴類,二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮等之醯胺系溶劑等。有機溶劑亦可組合2種以上而使用。 Examples of the organic solvent include ketones such as acetone, methyl ethyl ketone, and cyclohexanone; ethyl acetate, butyl acetate, cellosolve acetate, propylene glycol monomethyl ether acetate, and carbitol B. Acetate such as acid ester, cellulolytic agent, carbitol such as butyl carbitol, aromatic hydrocarbon such as toluene or xylene, dimethylformamide, dimethylacetamide, N a guanamine-based solvent such as methylpyrrolidone or the like. The organic solvent may be used in combination of two or more kinds.

乾燥條件係沒有特別的限定,但以樹脂組成物層中之有機溶劑的含量(殘留溶劑量)成為例如1~10質量%以下,較佳成為2~6質量%以下之方式使乾燥。雖然亦隨著清漆中的有機溶劑量、有機溶劑之沸點而不同,但例如可藉由在50~150℃使含有30~60質量%的有機溶劑之清漆乾燥3~10分鐘左右,而形成樹脂組成物層。 The drying condition is not particularly limited, and the content of the organic solvent (residual solvent amount) in the resin composition layer is, for example, 1 to 10% by mass or less, preferably 2 to 6% by mass or less, and is dried. Although it varies depending on the amount of the organic solvent in the varnish and the boiling point of the organic solvent, for example, the varnish containing 30 to 60% by mass of the organic solvent may be dried at 50 to 150 ° C for about 3 to 10 minutes to form a resin. Composition layer.

接著薄膜中所形成的樹脂組成物層之厚度,較佳為導體層之厚度以上。電路基板所具有的導體層之厚度,由於通常為5~70μm之範圍,故樹脂組成物層較佳為具有10~200μm之厚度,從薄膜化之觀點來看,更佳為15~100μm,尤佳為20~60μm。 The thickness of the resin composition layer formed in the film is preferably more than the thickness of the conductor layer. The thickness of the conductor layer of the circuit board is usually in the range of 5 to 70 μm, so the resin composition layer preferably has a thickness of 10 to 200 μm, and more preferably 15 to 100 μm from the viewpoint of film formation. Good for 20~60μm.

作為支持體,例如可舉出聚乙烯、聚丙烯、聚氯乙烯等的聚烯烴之薄膜、聚對苯二甲酸乙二酯(以下簡稱「PET」)、聚萘二甲酸乙二酯等的聚酯之薄膜、聚碳酸酯薄膜、聚醯亞胺薄膜等之各種塑膠薄膜。又,亦可使用離型紙或銅箔及鋁箔等的金屬箔等。其中,從泛用性之點來看,較佳為塑膠薄膜,更佳為PET薄膜。對於支持體及後述 的保護薄膜,亦可施予消光處理、電暈處理等之表面處理。又,可用聚矽氧樹脂系脫模劑、醇酸樹脂系脫模劑、氟樹脂系脫模劑等的脫模劑來施予脫模處理。支持體之厚度係沒有特別的限定,較佳為10~150μm,更佳為25~50μm。 Examples of the support include a film of a polyolefin such as polyethylene, polypropylene, or polyvinyl chloride, or a polyethylene terephthalate (hereinafter referred to as "PET") or polyethylene naphthalate. Various plastic films such as ester film, polycarbonate film, and polyimide film. Further, a release paper, a metal foil such as a copper foil or an aluminum foil, or the like can be used. Among them, from the viewpoint of versatility, a plastic film is preferred, and a PET film is more preferred. For the support and the following The protective film can also be subjected to a surface treatment such as matting treatment or corona treatment. Further, the mold release treatment can be carried out by using a release agent such as a polyoxymethylene resin release agent, an alkyd resin release agent, or a fluororesin release agent. The thickness of the support is not particularly limited, but is preferably 10 to 150 μm, more preferably 25 to 50 μm.

於樹脂組成物層的支持體不密接之面上,可更層合比照支持體的保護薄膜。保護薄膜之厚度係沒有特別的限定,例如為1~40μm,較佳為5~20μm。藉由層合保護薄膜,可防止廢物等對樹脂組成物層的表面之附著或損傷。接著薄膜亦可捲繞成圓筒狀而儲藏。 The protective film of the support can be further laminated on the surface of the resin composition layer where the support is not adhered. The thickness of the protective film is not particularly limited and is, for example, 1 to 40 μm, preferably 5 to 20 μm. By laminating the protective film, adhesion or damage to the surface of the resin composition layer by waste or the like can be prevented. The film can then be wound into a cylindrical shape and stored.

[印刷配線板] [Printed wiring board]

作為本發明之印刷配線板,例如可舉出剛性電路基板、撓性電路基板、單面層合基板、薄物基板等。茲說明使用如上述所製造的接著薄膜來製造印刷配線板之方法的一例。 Examples of the printed wiring board of the present invention include a rigid circuit board, a flexible circuit board, a single-sided laminated board, and a thin substrate. An example of a method of manufacturing a printed wiring board using the adhesive film manufactured as described above will be described.

首先,使用真空層合機,將接著薄膜層合(積層)於內層電路基板之一面或兩面上。作為內層電路基板所用之基板,例如可舉出玻璃環氧基板、金屬基板、聚酯基板、聚醯亞胺基板、BT樹脂基板、熱硬化型聚苯醚基板等。再者,此處所謂的內層電路基板,就是指在如上述的基板之一面或兩面上形成有經圖型加工的導體層(電路)者。又,於導體層與絕緣層交替地層合而成之多層印刷配線板中,成為該多層印刷配線板之最外層的一面或兩面經圖型加工 的導體層(電路)者,亦包含於此處所言之內層電路基板。再者,對於導體層表面,亦可藉由黑化處理、銅蝕刻等預先施予粗化處理。 First, a film is laminated (laminated) on one or both sides of the inner layer circuit substrate using a vacuum laminator. Examples of the substrate used for the inner layer circuit board include a glass epoxy substrate, a metal substrate, a polyester substrate, a polyimide substrate, a BT resin substrate, and a thermosetting polyphenylene ether substrate. Here, the inner layer circuit board as used herein refers to a conductor layer (circuit) formed by patterning on one surface or both surfaces of the substrate as described above. Further, in the multilayer printed wiring board in which the conductor layer and the insulating layer are alternately laminated, one or both sides of the outermost layer of the multilayer printed wiring board are patterned. The conductor layer (circuit) is also included in the inner layer circuit substrate as referred to herein. Further, the surface of the conductor layer may be subjected to a roughening treatment in advance by a blackening treatment, copper etching or the like.

於上述層合中,當接著薄膜具有保護薄膜時,於去除該保護薄膜後,按照需要將接著薄膜及電路基板預熱,一邊加壓及加熱接著薄膜,一邊層合在電路基板上。於本發明之接著薄膜中,宜採用藉由真空層合法在減壓下層合於電路基板上之方法。層合之條件係沒有特別的限定,但例如壓黏溫度(層合溫度)較佳為70~140℃,壓黏壓力(層合壓力)較佳為1~11kgf/cm2(9.8×104~107.9×104N/m2),壓黏時間(層合時間)較佳為5~180秒,於空氣壓力20mmHg(26.7hPa)以下之減壓下進行層合者為佳。又,層合的方法可為分批式或藉由輥的連續式。真空層合係可使用市售的真空層合機來進行。作為市售的真空層合機,例如可舉出Nichigo-Morton(股)製真空施加機、(股)名機製作所製真空加壓式層合機、(股)日立工業製輥式乾塗機、日立AIC(股)製真空層合機等。 In the above-mentioned lamination, when the adhesive film has a protective film, after the protective film is removed, the adhesive film and the circuit substrate are preheated as needed, and the film is laminated on the circuit board while being pressed and heated. In the adhesive film of the present invention, a method of laminating on a circuit substrate under reduced pressure by vacuum lamination is preferably employed. The conditions for the lamination are not particularly limited, but for example, the pressure bonding temperature (laminating temperature) is preferably 70 to 140 ° C, and the pressing pressure (laminating pressure) is preferably 1 to 11 kgf/cm 2 (9.8 × 10 4 ). ~107.9×10 4 N/m 2 ), the pressure-bonding time (lamination time) is preferably 5 to 180 seconds, and it is preferred to carry out lamination under a reduced pressure of 20 mmHg (26.7 hPa) or less. Further, the lamination method may be a batch type or a continuous type by a roll. The vacuum lamination system can be carried out using a commercially available vacuum laminator. As a commercially available vacuum laminator, for example, a vacuum press machine manufactured by Nichigo-Morton Co., Ltd., a vacuum press laminator made by a machine manufacturer, and a dry roll coater manufactured by Hitachi Industrial Co., Ltd. , Hitachi AIC (share) vacuum laminator and so on.

將接著薄膜層合於內層電路基板上後,冷卻至室溫附近後,於剝離支持體之情況,進行剝離,藉由將樹脂組成物予以熱硬化而形成硬化物,可在內層電路基板上形成絕緣層。熱硬化之條件係可按照樹脂組成物中的樹脂成分之種類、含量等而適宜選擇,較佳為在150℃~220℃、20分鐘~180分鐘,更佳為在160℃~210℃、30~120分鐘之範圍中選擇。於形成絕緣層後,在硬化前不剝離支持體 時,視需要亦可於此剝離支持體。絕緣層之厚度,係與接著薄膜中所形成的樹脂組成物層之厚度同樣,較佳為具有10~200μm之厚度,從薄膜化之觀點來看,更佳為15~100μm,尤佳為20~60μm。 After laminating the film on the inner layer circuit board, the film is cooled to room temperature, and then peeled off, and the resin composition is thermally cured to form a cured product, which is an inner layer circuit board. An insulating layer is formed thereon. The conditions of the heat curing can be appropriately selected according to the kind and content of the resin component in the resin composition, and are preferably 150 ° C to 220 ° C, 20 minutes to 180 minutes, more preferably 160 ° C to 210 ° C, 30 Choose from a range of ~120 minutes. After forming the insulating layer, the support is not peeled off before hardening When necessary, the support may be peeled off as needed. The thickness of the insulating layer is preferably 10 to 200 μm in thickness, similarly to the thickness of the resin composition layer formed in the film, and more preferably 15 to 100 μm, particularly preferably 20 from the viewpoint of film formation. ~60μm.

其次,對在內層電路基板上所形成的絕緣層進行開孔加工,而形成通孔、貫穿孔。開孔加工例如可藉由鑽孔、雷射、電漿等眾所周知的方法,而且按照需要可組合此等方法來進行,但二氧化碳雷射、YAG雷射等的雷射之開孔加工是最一般的方法。於開孔加工前不剝離支持體時,變成於此剝離支持體。 Next, the insulating layer formed on the inner layer circuit substrate is subjected to a hole drilling process to form a through hole and a through hole. The hole drilling process can be performed by well-known methods such as drilling, laser, plasma, etc., and can be combined as needed, but the laser drilling process such as carbon dioxide laser and YAG laser is the most common. Methods. When the support is not peeled off before the hole processing, the support is peeled off from this.

接著,對絕緣層表面進行粗化處理。於乾式的粗化處理時,可舉出電漿處理等,於濕式的粗化處理時,可舉出依順序進行藉由膨潤液的膨潤處理、藉由氧化劑的粗化處理及藉由中和液的中和處理之方法。濕式的粗化處理方式係在可一邊在絕緣層表面形成凹凸的錨,一邊去除通孔內的膠渣之點較佳。藉由膨潤液的膨潤處理係藉由將絕緣層在50~80℃浸漬於膨潤液中5~20分鐘(較佳為在55~70℃浸漬8~15分鐘)而進行。作為膨潤液,可舉出鹼溶液、界面活性劑溶液等,較佳為鹼溶液。作為該鹼溶液,例如可舉出氫氧化鈉溶液、氫氧化鉀溶液等。作為市售的膨潤液,例如可舉出ATOTECH日本(股)製之膨潤浸漬Securiganth P(Swelling Dip Securiganth P)、膨潤浸漬Securiganth SBU(Swelling Dip Securiganth SBU)等。藉由氧化劑的粗化處理係藉由將絕緣層在60~80℃浸漬於氧化 劑溶液中10~30分鐘(較佳為在70~80℃浸漬15~25分鐘)而進行。作為氧化劑,例如可舉出在氫氧化鈉的水溶液中溶解有過錳酸鉀或過錳酸鈉之鹼性過錳酸溶液、重鉻酸鹽、臭氧、過氧化氫/硫酸、硝酸等。又,鹼性過錳酸溶液中的過錳酸鹽之濃度較佳為5~10重量%。作為市售的氧化劑,例如可舉出ATOTECH日本(股)製之Concentrate Compact CP、Dosing Solution Securiganth P等的鹼性過錳酸溶液。藉由中和液的中和處理係將絕緣層在30~50℃浸漬於中和液中3~10分鐘(較佳為在35~45℃浸漬3~8分鐘)而進行。作為中和液,較佳為酸性的水溶液,作為市售品,可舉出ATOTECH日本(股)製之Reduction Solution Securigand P。 Next, the surface of the insulating layer is roughened. In the case of the dry roughening treatment, a plasma treatment or the like may be mentioned, and in the case of the wet roughening treatment, the swelling treatment by the swelling liquid, the roughening treatment by the oxidizing agent, and the like may be mentioned in the order of the wet roughening treatment. The method of neutralization treatment with liquid. The wet roughening treatment method is preferable in that the anchor in the through hole is removed while the anchor having irregularities is formed on the surface of the insulating layer. The swelling treatment by the swelling liquid is carried out by immersing the insulating layer in the swelling liquid at 50 to 80 ° C for 5 to 20 minutes (preferably, immersing at 55 to 70 ° C for 8 to 15 minutes). The swelling solution may, for example, be an alkali solution or a surfactant solution, and is preferably an alkali solution. Examples of the alkali solution include a sodium hydroxide solution and a potassium hydroxide solution. Examples of the commercially available swellable liquid include, for example, a swell-impregnated Securiganth P (Swelling Dip Securiganth P) manufactured by ATOTECH Co., Ltd., and a Schilling Dip Securiganth SBU (Swelling Dip Securiganth SBU). The oxidizing agent is etched by oxidizing the insulating layer at 60 to 80 ° C. The solution is carried out for 10 to 30 minutes (preferably, immersion at 70 to 80 ° C for 15 to 25 minutes). Examples of the oxidizing agent include an alkaline permanganic acid solution in which potassium permanganate or sodium permanganate is dissolved in an aqueous solution of sodium hydroxide, dichromate, ozone, hydrogen peroxide/sulfuric acid, nitric acid, or the like. Further, the concentration of the permanganate in the alkaline permanganic acid solution is preferably from 5 to 10% by weight. The commercially available oxidizing agent is, for example, an alkaline permanganic acid solution such as Concentrate Compact CP or Dosing Solution Securiganth P manufactured by ATOTECH Japan Co., Ltd. The insulating layer is immersed in the neutralizing solution at 30 to 50 ° C for 3 to 10 minutes (preferably immersed at 35 to 45 ° C for 3 to 8 minutes) by a neutralization treatment of the neutralizing liquid. The neutralization liquid is preferably an acidic aqueous solution, and a commercially available product is ATOTECH Japan's Reduction Solution Securigand P.

粗化處理後的絕緣層表面之算術平均粗糙度(Ra),從微細配線形成之點與剝離強度的安定化之點來看,較佳為220~1000nm,更佳為300~800nm。具體地,使用非接觸型表面粗糙度計(VEECO儀器公司製WYKO NT3300),藉由VSI接觸模式、50倍透鏡,由測定範圍為121μm×92μm所得之數值,可求得Ra值。 The arithmetic mean roughness (Ra) of the surface of the insulating layer after the roughening treatment is preferably from 220 to 1,000 nm, more preferably from 300 to 800 nm, from the viewpoint of the point of formation of the fine wiring and the stability of the peel strength. Specifically, using a non-contact type surface roughness meter (WYKO NT3300 manufactured by VEECO Instruments Co., Ltd.), the Ra value can be obtained by a value obtained by a measurement range of 121 μm × 92 μm by a VSI contact mode and a 50-fold lens.

其次,藉由乾式鍍敷或濕式鍍敷,在絕緣層上形成導體層。作為乾式鍍敷,可使用蒸鍍、濺鍍、離子鍍等之眾所周知的方法。作為濕式鍍敷,例如可舉出組合無電解鍍敷與電解鍍敷來形成導體層之方法,形成與導體層相反圖型的抗鍍敷體,僅藉由無電解鍍敷來形成導體層之方法等。 Next, a conductor layer is formed on the insulating layer by dry plating or wet plating. As the dry plating, a well-known method such as vapor deposition, sputtering, or ion plating can be used. Examples of the wet plating include a method in which a conductor layer is formed by combining electroless plating and electrolytic plating, and a plating resist having a pattern opposite to that of the conductor layer is formed, and the conductor layer is formed only by electroless plating. Method and so on.

導體層與該絕緣層的剝離強度較佳為0.5kgf/cm以上,更佳為0.6kgf/cm以上,尤佳為0.7kgf/cm以上。剝離強度之上限值係沒有特別的限制,為1.5kgf/cm以下、1.0kgf/cm以下等。 The peeling strength of the conductor layer and the insulating layer is preferably 0.5 kgf/cm or more, more preferably 0.6 kgf/cm or more, and particularly preferably 0.7 kgf/cm or more. The upper limit of the peel strength is not particularly limited, and is 1.5 kgf/cm or less, 1.0 kgf/cm or less, and the like.

作為其後的圖型形成之方法,例如可使用本業者中眾所周知之減成法、半加成法等,藉由重複數次的上述一連串的步驟,亦可形成多段地層合有增建層之多層印刷配線板。如此地,於本發明中,由於硬化物的尺寸安定性高,硬化物的翹曲小,而可適用於剛性電路基板、撓性電路基板、單面層合基板、薄物基板等之印刷配線板,特別地即使多段地層合,也由於硬化物的尺寸安定性高,硬化物的翹曲小,而更適用作為多層印刷配線板之增建層。 As a method of forming the subsequent pattern, for example, a subtractive method, a semi-additive method, or the like, which is well known in the art, may be used, and by repeating the above-described series of steps several times, a plurality of layers may be formed with an additional layer. Multilayer printed wiring board. In the present invention, the cured product has high dimensional stability and a small warpage of the cured product, and is applicable to a printed wiring board such as a rigid circuit board, a flexible circuit board, a single-sided laminated board, or a thin substrate. In particular, even if a plurality of layers are laminated, since the size of the cured product is high in stability and the warpage of the cured product is small, it is more suitable as an additional layer of the multilayer printed wiring board.

[晶圓級晶片尺寸封裝] [Wafer Level Wafer Size Package]

藉由本發明之絕緣樹脂材料,可製作尺寸安定性且低翹曲性優異之晶圓級晶片尺寸封裝。絕緣樹脂材料係可層合在晶圓級晶片尺寸封裝之兩面,也可層合在一面。於晶圓級晶片尺寸封裝中,考查各種的構造,可大致區分為扇入(fan-in)構造與扇出構造。矽晶圓之厚度,從薄膜化之觀點來看,較佳為50~150μm,更佳為80~120μm。 By the insulating resin material of the present invention, a wafer level wafer size package excellent in dimensional stability and low warpage can be produced. The insulating resin material can be laminated on both sides of the wafer level wafer size package, or laminated on one side. In the wafer level wafer size package, various configurations are examined, which can be roughly classified into a fan-in structure and a fan-out structure. The thickness of the germanium wafer is preferably from 50 to 150 μm, more preferably from 80 to 120 μm, from the viewpoint of film formation.

作為使用如上述所製造之接著薄膜來製造扇入構造的晶圓級晶片尺寸封裝之方法的一例,舉出包含以下步驟之方法。 As an example of a method of manufacturing a wafer level wafer size package using a bonding film manufactured as described above, a method including the following steps is exemplified.

(1)於矽晶圓上形成電路及電極墊之步驟。 (1) The step of forming a circuit and an electrode pad on the wafer.

(2)於矽晶圓上層合本發明的接著薄膜之步驟。 (2) A step of laminating the adhesive film of the present invention on a wafer.

(3)使接著薄膜硬化,剝離支持體,進行開孔,進行去膠渣處理,藉由無電解鍍敷及電解鍍敷形成再配線層之步驟。 (3) A step of curing the film, peeling off the support, performing opening, performing desmear treatment, and forming a rewiring layer by electroless plating and electrolytic plating.

(4)按照需要,自此再配線層之上,更重複(2)及(3)之步驟。 (4) Repeat the steps (2) and (3) above the wiring layer as needed.

(5)於再配線層上形成焊料球之步驟。 (5) A step of forming a solder ball on the rewiring layer.

(6)進行切割之步驟。 (6) The step of cutting.

作為其它扇入構造的晶圓級晶片尺寸封裝之製造方法之一例,例如可舉出日本發明專利第3618330號中記載之方法,舉出包含以下步驟之方法。 An example of a method of manufacturing a wafer-level wafer-size package of another fan-in structure is, for example, a method described in Japanese Patent No. 3618330, and a method including the following steps.

(1)製作在具有指定機能的電路元件及於此電路元件上形成有電連接的複數之電極墊之矽晶圓之步驟。 (1) A step of fabricating a circuit element having a specified function and forming a plurality of electrode pads electrically connected to the circuit element.

(2)於矽晶圓上的電極墊部之上面,形成柱狀電極之步驟。 (2) A step of forming a columnar electrode on the electrode pad portion on the wafer.

(3)自柱狀電極面側來貼合本發明之接著薄膜,使硬化,剝離支持體,形成絕緣層之步驟。 (3) A step of bonding the adhesive film of the present invention to the surface of the columnar electrode surface to be cured, peeling off the support, and forming an insulating layer.

(4)適宜地研磨去除絕緣層與柱狀電極之上面部,而使柱狀電極之上面露出之步驟。 (4) A step of suitably grinding and removing the insulating layer and the upper surface of the columnar electrode to expose the upper surface of the columnar electrode.

(5)於所露出的柱狀電極之上面,形成焊料球之步驟。 (5) A step of forming a solder ball on the exposed columnar electrode.

(6)進行切割之步驟。 (6) The step of cutting.

作為使用如上述所製造之接著薄膜來製造扇出構造的晶圓級晶片尺寸封裝之方法的一例,舉出包含以下步驟之 方法。 An example of a method of manufacturing a wafer level wafer size package using a bonding film manufactured as described above to fabricate a fan-out structure includes the following steps method.

(1)切割矽晶圓,製作晶片個別片之步驟。 (1) The step of cutting the wafer and making individual wafers.

(2)經由薄膜將晶片個別片固定於支持基板上之步驟。 (2) a step of fixing individual wafer sheets to a support substrate via a film.

(3)自晶片個別片側來層合本發明的接著薄膜之步驟。 (3) A step of laminating the adhesive film of the present invention from the individual sheet side of the wafer.

(4)將薄膜硬化,剝離支持體,進行開孔,進行去膠渣處理,藉由無電解鍍敷及電解鍍敷形成再配線層之步驟。 (4) A step of hardening a film, peeling off the support, performing opening, performing desmear treatment, and forming a rewiring layer by electroless plating and electrolytic plating.

(5)按照需要,更層合薄膜之步驟。 (5) The step of laminating the film as needed.

(6)於再配線層上形成焊料球之步驟。 (6) A step of forming a solder ball on the rewiring layer.

作為其它扇出構造的晶圓級晶片尺寸封裝之製造方法之一例,例如可舉出日本特開2005-167191號公報中記載之方法,舉出包含以下步驟之方法。 An example of a method of manufacturing a wafer-level wafer-size package of another fan-out structure is, for example, a method described in JP-A-2005-167191, and a method including the following steps.

(1)製作在具有指定機能的電路元件及於此電路元件上形成有電連接的複數之電極墊之矽晶圓之步驟。 (1) A step of fabricating a circuit element having a specified function and forming a plurality of electrode pads electrically connected to the circuit element.

(2)經由切割來製作半導體晶片個別片之步驟。 (2) A step of forming individual wafers of semiconductor wafers by dicing.

(3)以半導體晶片間的距離具有為了在以後之步驟中形成扇出球陣列之充分空間的位置關係,經由支持體上之薄膜,將半導體晶片廣泛配置固定之步驟。 (3) A step of widely arranging and fixing the semiconductor wafer via the film on the support in such a manner that the distance between the semiconductor wafers has a sufficient space for forming a fan-out ball array in a subsequent step.

(4)自半導體晶片固定之面側,以填充半導體晶片間之方式,層合本發明之接著薄膜之步驟。 (4) A step of laminating the adhesive film of the present invention from the side of the semiconductor wafer to be fixed to fill the semiconductor wafer.

(5)將接著薄膜硬化,剝離支持體,蝕刻半導體晶片的墊上之絕緣層,形成開口,於開口部內形成導電層之步 驟。 (5) curing the film, peeling off the support, etching the insulating layer on the pad of the semiconductor wafer, forming an opening, and forming a conductive layer in the opening Step.

(6)使用光阻,於絕緣層之上形成扇出圖型與電極,於電極墊之上形成焊料球之步驟。 (6) Using a photoresist, a fan-out pattern and an electrode are formed on the insulating layer, and a solder ball is formed on the electrode pad.

[實施例] [Examples]

以下使用實施例及比較例來更詳細說明本發明,惟此等完全不限制本發明。再者,以下記載之「份」意味「質量份」。 Hereinafter, the present invention will be described in more detail by way of the examples and comparative examples. In addition, the "parts" described below mean "parts by mass".

[高分子樹脂A之製造] [Manufacture of Polymer Resin A]

於反應容器中混合G-3000(2官能性羥基末端聚丁二烯,數量平均分子量=5047(GPC法),羥基當量=1798g/eq.,固體成分100wt%:日本曹達(股)製)50g、Ipzole 150(芳香族烴系混合溶劑:出光石油化學(股)製)23.5g、月桂酸二丁錫0.005g,使均勻地溶解。成為均勻時,升溫至50℃,更邊攪拌邊添加甲苯-2,4-二異氰酸酯(異氰酸酯基當量=87.08g/eq.)4.8g,進行約3小時反應。其次,將此反應物冷卻至室溫為止後,於其中添加二苯基酮四羧酸二酐(酸酐當量=161.1g/eq.)8.96g、三伸乙二胺0.07g與乙基二甘醇乙酸酯(DAICEL化學工業(股)公司製)40.4g,邊攪拌邊升溫至130℃為止,進行約4小時反應。藉由FT-IR,進行2250cm-1的NCO波峰之消失的確認。將NCO波峰消失之確認看作為反應之終點,將反應物降溫至室溫為止後,以100網目的濾布來過濾,得到具有醯亞胺骨架、胺基 甲酸酯骨架、丁二烯骨架的高分子樹脂A。 G-3000 (2-functional hydroxyl-terminated polybutadiene, number average molecular weight = 5047 (GPC method), hydroxyl equivalent = 1798 g/eq., solid content 100 wt%: manufactured by Nippon Soda Co., Ltd.) 50 g mixed in a reaction vessel Ipzole 150 (aromatic hydrocarbon-based mixed solvent: manufactured by Idemitsu Petrochemical Co., Ltd.) 23.5 g and dibutyltin laurate (0.005 g) were uniformly dissolved. When it was uniform, the temperature was raised to 50 ° C, and 4.8 g of toluene-2,4-diisocyanate (isocyanate group equivalent = 87.08 g / eq.) was further added while stirring, and the reaction was carried out for about 3 hours. Next, after cooling the reaction mixture to room temperature, diphenyl ketone tetracarboxylic dianhydride (anhydride equivalent = 161.1 g / eq.) 8.96 g, triethylene glycol diamine 0.07 g and ethyl digan were added thereto. 40.4 g of alcohol acetate (manufactured by DAICEL Chemical Industry Co., Ltd.) was heated to 130 ° C while stirring, and the reaction was carried out for about 4 hours. The disappearance of the NCO peak of 2250 cm -1 was confirmed by FT-IR. The confirmation of the disappearance of the NCO peak was regarded as the end point of the reaction, and after the reaction product was cooled to room temperature, it was filtered through a 100-mesh filter cloth to obtain a quinone imine skeleton, a urethane skeleton, and a butadiene skeleton. Polymer resin A.

黏度:7.5Pa‧s(25℃,E型黏度計) Viscosity: 7.5Pa ‧ (25 ° C, E-type viscometer)

酸價:16.9mgKOH/g Acid value: 16.9 mgKOH/g

固體成分:50質量% Solid content: 50% by mass

數量平均分子量:13723 Number average molecular weight: 13723

玻璃轉移溫度:-10℃ Glass transfer temperature: -10 ° C

聚丁二烯構造部分之含有率:50/(50+4.8+8.96)×100=78.4質量%。 The content of the polybutadiene structural portion was 50/(50 + 4.8 + 8.96) × 100 = 78.4% by mass.

[實施例1] [Example 1]

混合液狀雙酚A型環氧樹脂(環氧當量180,三菱化學(股)製「jER828EL」)40份、咪唑衍生物(四國化成(股)製「2P4MZ」,2-苯基-4-甲基咪唑)1份、高分子樹脂A 260份、MEK 300份、液狀萘型環氧樹脂(環氧當量151,DIC(股)製「HP4032」20份、經苯基胺基矽烷系偶合劑(信越化學工業(股)製「KBM573」)所表面處理之球形矽石(ADMATECHS(股)製「SO-C2」,平均粒徑0.5μm)920份,用高速旋轉混合機來均勻分散,以製作樹脂清漆。其次,於聚對苯二甲酸乙二酯薄膜(厚度38μm,以下簡稱「PET薄膜」)上,以乾燥後的樹脂組成物層之厚度成為40μm之方式,用口模塗佈機塗佈,在80~120℃(平均100℃)乾燥7分鐘,得到接著薄膜。 40 parts of mixed liquid bisphenol A type epoxy resin (epoxy equivalent weight 180, "JER828EL" manufactured by Mitsubishi Chemical Corporation), imidazole derivative (2P4MZ manufactured by Shikoku Kasei Co., Ltd.), 2-phenyl-4 -1 part of methylimidazole), 260 parts of polymer resin A, 300 parts of MEK, liquid naphthalene type epoxy resin (epoxy equivalent 151, 20 parts of "HP4032" made by DIC), phenylamino decane system 920 parts of spherical vermiculite ("SO-C2" manufactured by ADMATECHS Co., Ltd., average particle size 0.5 μm) treated by a coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.), and uniformly dispersed by a high-speed rotary mixer In order to produce a resin varnish, a polyethylene terephthalate film (thickness: 38 μm, hereinafter abbreviated as "PET film") was applied by a die so that the thickness of the dried resin composition layer was 40 μm. The cloth was coated and dried at 80 to 120 ° C (average 100 ° C) for 7 minutes to obtain a film.

[實施例2] [Embodiment 2]

混合液狀雙酚A型環氧樹脂(環氧當量180,三菱化學(股)製「jER828EL」)54份、咪唑衍生物(四國化成(股)製「2P4MZ」)1份、高分子樹脂A 400份、MEK 300份、液狀萘型環氧樹脂(環氧當量151,DIC(股)製「HP4032」20份、經苯基胺基矽烷系偶合劑(信越化學工業(股)製、「KBM573」)所表面處理之球形矽石(ADMATECHS(股)製「SO-C2」,平均粒徑0.5μm)920份,用高速旋轉混合機來均勻分散,以製作樹脂清漆。然後,與實施例1同樣地得到接著薄膜。 54 parts of a mixed liquid bisphenol A type epoxy resin (epoxy equivalent weight 180, "JER828EL" manufactured by Mitsubishi Chemical Corporation), 1 part of an imidazole derivative ("2P4MZ" manufactured by Shikoku Kasei Co., Ltd.), polymer resin A 400 parts, 300 parts of MEK, liquid naphthalene type epoxy resin (epoxy equivalent 151, 20 parts of "DIC403" made by DIC), phenylamino decane-based coupling agent (Shin-Etsu Chemical Co., Ltd., "KBM573") 920 parts of spherical vermiculite ("SO-C2" manufactured by ADMATECHS Co., Ltd., average particle diameter: 0.5 μm), which was surface-treated, and uniformly dispersed by a high-speed rotary mixer to produce a resin varnish. In the same manner as in Example 1, a film was obtained.

[實施例3] [Example 3]

除了將實施例1之經苯基胺基矽烷系偶合劑(信越化學工業(股)製「KBM573」)所表面處理之球形矽石(ADMATECHS(股)製「SO-C2」,平均粒徑0.5μm)變更為經苯基胺基矽烷系偶合劑(信越化學工業(股)製「KBM573」)所表面處理之球形矽石(ADMATECHS(股)製「SO-C5」,平均粒徑1.6μm)以外,與實施例1同樣地得到接著薄膜。 A spherical vermiculite ("DMA-C2" manufactured by ADMATECHS Co., Ltd.) having a phenylamino decane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) of Example 1 has an average particle diameter of 0.5. Μm) was changed to a spheroidal vermiculite ("SO-C5" manufactured by ADMATECHS Co., Ltd., average particle size 1.6 μm) which was surface-treated with a phenylamino decane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.). A film of the adhesive film was obtained in the same manner as in Example 1 except for the above.

[實施例4] [Example 4]

除了將實施例2之經苯基胺基矽烷系偶合劑(信越化學工業(股)製、「KBM573」)所表面處理之球形矽石(ADMATECHS(股)製「SO-C2」,平均粒徑0.5μm)變更為經苯基胺基矽烷系偶合劑(信越化學工業(股)製「KBM573 」)所表面處理之球形矽石(ADMATECHS(股)製「SO-C5」,平均粒徑1.6μm)以外,與實施例2同樣地得到接著薄膜。 A spherical vermiculite ("DMA-C2" manufactured by ADMATECHS Co., Ltd.) having a surface area of a phenylamino decane-based coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., "KBM573") of Example 2, average particle diameter 0.5 μm) changed to phenylamino decane coupling agent (Shin-Etsu Chemical Co., Ltd. "KBM573" In the same manner as in Example 2 except that the spherical vermiculite ("SO-C5" manufactured by ADMATECHS Co., Ltd., average particle diameter: 1.6 μm) was surface-treated.

[比較例1] [Comparative Example 1]

除了將實施例1之球形矽石變更為50份以外,與實施例1同樣地得到接著薄膜。 An adhesive film was obtained in the same manner as in Example 1 except that the spherical vermiculite of Example 1 was changed to 50 parts.

[參考例1] [Reference Example 1]

混合液狀雙酚A型環氧樹脂(環氧當量180,三菱化學(股)製「jER828EL」)40.3份、咪唑衍生物(四國化成(股)製「2P4MZ」)0.5份、MEK 30份、液狀萘型環氧樹脂(環氧當量151,DIC(股)製「HP4032」)10份、固形萘型環氧樹脂(環氧當量250,DIC(股)製「HP6000」)42.5份、苯氧基樹脂溶液(日本環氧樹脂(股)製,「YX6954」,不揮發分30質量%的MEK與環己酮之混合溶液,玻璃轉移溫度120℃)14份、苯酚酚醛清漆樹脂(酚性羥基當量105,DIC(股)製,「TD2090」的不揮發分60質量%之MEK清漆)75份、經苯基胺基矽烷系偶合劑(信越化學工業(股)製「KBM573」)所表面處理之球形矽石(ADMATECHS(股)製「SO-C2」,平均粒徑0.5μm)625份,用高速旋轉混合機來均勻分散,以製作樹脂清漆。然後,與實施例1同樣地得到接著薄膜。 40.3 parts of a mixed liquid bisphenol A type epoxy resin (epoxy equivalent weight 180, "jer828EL" manufactured by Mitsubishi Chemical Corporation), 0.5 parts of an imidazole derivative ("2P4MZ" manufactured by Shikoku Kasei Co., Ltd.), and 30 parts of MEK. 10 parts of liquid naphthalene type epoxy resin (epoxy equivalent 151, "HP4032" made by DIC), 42.5 parts of solid naphthalene type epoxy resin (epoxy equivalent 250, "HP6000" manufactured by DIC) Phenoxy resin solution (made by Nippon Epoxy Resin Co., Ltd., "YX6954", a mixed solution of MEK and cyclohexanone having a nonvolatile content of 30% by mass, glass transfer temperature of 120 ° C), 14 parts, phenol novolak resin (phenol A hydroxyl group equivalent of 105, DIC (shares), "TD2090", 60% by mass of MEK varnish, 75 parts by weight, and a phenylamino decane coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) 625 parts of a surface-treated spherical vermiculite ("SO-C2" manufactured by ADMATECHS Co., Ltd., average particle diameter: 0.5 μm) was uniformly dispersed by a high-speed rotary mixer to prepare a resin varnish. Then, a film of the adhesive film was obtained in the same manner as in Example 1.

[彈性模數之測定] [Measurement of elastic modulus]

使上述接著薄膜在180℃熱硬化90分鐘而得到薄片狀的硬化物。其次,剝離PET薄膜,依據日本工業規格(JIS K7127),藉由Tensilon萬能試驗機((股)A&D製)進行硬化物的拉伸試驗,測定硬化物之彈性模數。 The above-mentioned adhesive film was thermally cured at 180 ° C for 90 minutes to obtain a flaky cured product. Next, the PET film was peeled off, and the tensile modulus of the cured product was measured by a Tensilon universal testing machine (manufactured by A&D Co., Ltd.) in accordance with Japanese Industrial Standards (JIS K7127), and the elastic modulus of the cured product was measured.

[翹曲之評價] [evaluation of warping]

於PET薄膜上,以實施例1~4、比較例1中記載的樹脂清漆成為厚度80μm之方式,用口模塗佈機塗佈,在80~120℃(平均100℃)乾燥6分鐘,形成熱硬化性樹脂組成物層,而製造接著薄膜。用分批式真空加壓層合機MVLP-500((股)名機製作所製,商品名),將此接著薄膜(80μm)貼合於矽晶圓(100μm)上,在180℃進行90分鐘之熱處理(熱硬化),觀察硬化物有無翹曲。按壓上述處理後的晶圓之端部,將所按壓的地方之相反側的晶圓端部與地上之距離當作翹曲量。將翹曲量為0~5mm者評價為「○」,將翹曲量大於5nm者評價「×」。表1中顯示結果。 On the PET film, the resin varnish described in Examples 1 to 4 and Comparative Example 1 was applied to a thickness of 80 μm, coated with a die coater, and dried at 80 to 120 ° C (average 100 ° C) for 6 minutes to form a PET varnish. The thermosetting resin is composed of a layer, and a film is produced. The batch film (80 μm) was bonded to a tantalum wafer (100 μm) by a batch type vacuum pressure laminator MVLP-500 (manufactured by Kosei Seisakusho Co., Ltd., and the film was baked at 180 ° C for 90 minutes. Heat treatment (thermal hardening), and observe whether the hardened material is warped. The end portion of the wafer after the above treatment is pressed, and the distance between the end portion of the wafer on the opposite side of the pressed portion and the ground is regarded as the amount of warpage. When the amount of warpage is 0 to 5 mm, it is evaluated as "○", and when the amount of warpage is greater than 5 nm, "x" is evaluated. The results are shown in Table 1.

[線熱膨脹係數之測定] [Determination of linear thermal expansion coefficient]

使上述接著薄膜在190℃熱硬化90分鐘而得到薄膜狀的硬化物。將該硬化物切斷成寬度5mm、長度15mm之試驗片,使用(股)RIGAKU製熱機械分析裝置(The rmo Plu s TMA8310),以拉伸加重法進行熱機械分析。將試驗片安裝在前述裝置後,於荷重1g、升溫速度5℃/分鐘之測定 條件下連續地測定2次。算出第2次之測定中的在25℃至150℃的平均線熱膨脹係數及在150℃至220℃的平均線熱膨脹係數。 The adhesive film was thermally cured at 190 ° C for 90 minutes to obtain a film-like cured product. The cured product was cut into a test piece having a width of 5 mm and a length of 15 mm, and subjected to thermomechanical analysis by a tensile weighting method using a thermomechanical analyzer (Thermo Plu s TMA8310) manufactured by RIGAKU. After the test piece was attached to the above apparatus, the load was measured at a load of 1 g and a temperature increase rate of 5 ° C/min. The measurement was continuously performed twice under the conditions. The average linear thermal expansion coefficient at 25 ° C to 150 ° C and the average linear thermal expansion coefficient at 150 ° C to 220 ° C in the second measurement were calculated.

[尺寸安定性之評價] [Evaluation of dimensional stability]

將上述在25℃至150℃的平均線熱膨脹係數為30ppm/℃以下而且在150℃至220℃的平均線熱膨脹係數32ppm/℃以下者評價為「○」,將上述在25℃至150℃的平均線熱膨脹係數大於30ppm/℃或在150℃至220℃的平均線熱膨脹係數大於32ppm/℃者評價為「△」,將上述在25℃至150℃的平均線熱膨脹係數大於100ppm/℃或在150℃至220℃的平均線熱膨脹係數大於200ppm/℃者評價為「×」。 The above average linear thermal expansion coefficient at 25 ° C to 150 ° C is 30 ppm / ° C or less, and the average linear thermal expansion coefficient of 32 ppm / ° C or less at 150 ° C to 220 ° C is evaluated as "○", and the above is at 25 ° C to 150 ° C. The average linear thermal expansion coefficient is greater than 30 ppm/° C. or the average linear thermal expansion coefficient at 150 ° C to 220 ° C is greater than 32 ppm / ° C. The average thermal expansion coefficient at 25 ° C to 150 ° C is greater than 100 ppm / ° C or The average linear thermal expansion coefficient of 150 ° C to 220 ° C was more than 200 ppm / ° C and was evaluated as "X".

[算術平均粗糙度(Ra)與剝離強度之測定] [Measurement of arithmetic mean roughness (Ra) and peel strength] (1)層合板之基底處理 (1) Base treatment of laminate

將玻璃布基材環氧樹脂兩面覆銅層合板[銅箔的厚度18μm,基板厚度0.3mm,松下電工(股)製R5715ES]的兩面浸漬於MEC(股)製CZ8100中,以進行銅表面的粗化處理。 The glass cloth substrate epoxy resin double-sided copper-clad laminate [copper foil thickness 18 μm, substrate thickness 0.3 mm, Matsushita Electric Co., Ltd. R5715ES] was immersed in the CZ8100 manufactured by MEC Co., Ltd. to perform copper surface. Coarse processing.

(2)接著薄膜之層合 (2) followed by lamination of the film

使用分批式真空加壓層合機MVLP-500((股)名機製作所製,商品名),將上述接著薄膜層合於層合板之兩面。 層合係減壓30秒而使氣壓成為13hPa以下,然後藉由在30秒、100℃、壓力0.74MPa下壓黏而進行。 The above-mentioned adhesive film was laminated on both surfaces of the laminate using a batch type vacuum pressure laminator MVLP-500 (trade name, manufactured by Konica Minolta Seisakusho Co., Ltd.). The laminate was depressurized for 30 seconds to have a gas pressure of 13 hPa or less, and then pressure-bonded at 30 seconds, 100 ° C, and a pressure of 0.74 MPa.

(3)樹脂組成物之硬化 (3) Hardening of resin composition

自所層合的接著薄膜來剝離PET薄膜,於180℃、30分鐘之條件下使樹脂組成物硬化,而形成絕緣層。 The PET film was peeled off from the laminated film which was laminated, and the resin composition was cured at 180 ° C for 30 minutes to form an insulating layer.

(4)粗化處理 (4) roughening treatment

於60℃將形成有絕緣層的層合板浸漬於膨潤液的ATOTECH日本(股)之含有二乙二醇單丁基醚的Swelling Dip Securigand P中5分鐘。接著於80℃浸漬於粗化液的ATOTECH日本(股)的Concentrate Compact P(KMnO4:60g/L,NaOH:40g/L之水溶液)中5分鐘。最後於40℃浸漬於中和液的ATOTECH日本(股)之Reduction Solution Securigand P中5分鐘。將此粗化處理後之層合板當作評價基板A。 The laminate in which the insulating layer was formed was immersed in a Swelling Dip Securigand P containing diethylene glycol monobutyl ether in ATOTECH Japan Co., Ltd. at 60 ° C for 5 minutes. Subsequently, it was immersed in a crude solution of ATOTECH Japan Co., Ltd., Concentrate Compact P (KMnO 4 : 60 g/L, NaOH: 40 g/L aqueous solution) at 80 ° C for 5 minutes. Finally, it was immersed in a neutralizing solution of ATOTECH Japan's Reduction Solution Securigand P at 40 ° C for 5 minutes. This roughened laminate was used as the evaluation substrate A.

(5)藉由半加成法的鍍敷 (5) Plating by semi-additive method

為了在絕緣層表面上形成電路,將評價基板A浸漬於含PdCl2的無電解鍍敷用溶液中,接著浸漬於無電解鍍銅液中。其次,進行硫酸銅電解鍍敷,以30μm之厚度形成導體層。接著,在180℃進行60分鐘的退火處理。將此鍍敷後的層合板當作評價基板B。 In order to form a circuit on the surface of the insulating layer, the evaluation substrate A was immersed in a solution for electroless plating containing PdCl 2 and then immersed in an electroless copper plating solution. Next, copper sulfate electrolytic plating was performed to form a conductor layer with a thickness of 30 μm. Next, annealing treatment was performed at 180 ° C for 60 minutes. This plated laminate was used as the evaluation substrate B.

(6)算術平均粗糙度(Ra)之測定 (6) Determination of arithmetic mean roughness (Ra)

使用非接觸型表面粗糙度計(VEECO儀器公司製「WYKO NT3300」),藉由VSI接觸模式、50倍透鏡,由測定範圍為121μm×92μm所得之數值來求得Ra值。然後,藉由求得10點的平均值而測定。 Using a non-contact surface roughness meter ("WYKO NT3300" manufactured by VEECO Instruments Co., Ltd.), the Ra value was obtained from a value obtained by measuring a range of 121 μm × 92 μm by a VSI contact mode and a 50-fold lens. Then, it was measured by obtaining an average value of 10 points.

(7)剝離強度之測定 (7) Determination of peel strength

於評價基板B之導體層中導入寬度10mm、長度100mm的部分之切槽,剝離其一端,以夾具(株式會社T.S.E,Autocom型試驗機AC-50C-SL)抓住,測定在室溫中以50mm/分鐘的速度在垂直方向中拉剝35mm時的荷重(kgf/cm)。 A slit having a width of 10 mm and a length of 100 mm was introduced into the conductor layer of the evaluation substrate B, and one end thereof was peeled off, and the holder was grasped by a jig (TSE, Autocom type tester AC-50C-SL), and measured at room temperature. The load (kgf/cm) at a speed of 50 mm/min when peeling 35 mm in the vertical direction.

由表1所示的結果可知,於實施例1~4中,線熱膨脹係數低而尺寸安定性優異,亦抑制硬化時之翹曲。另一方面,比較例1由於無機填充材之含量少,而減低硬化時之翹曲,但尺寸安定性差。又,參考例1係不使用玻璃轉移溫度為30℃以下的高分子樹脂,可知在硬化時發生翹曲,而且尺寸安定性亦大。 As is clear from the results shown in Table 1, in Examples 1 to 4, the linear thermal expansion coefficient was low and the dimensional stability was excellent, and the warpage at the time of hardening was also suppressed. On the other hand, in Comparative Example 1, since the content of the inorganic filler was small, the warpage at the time of curing was reduced, but the dimensional stability was poor. Further, in Reference Example 1, a polymer resin having a glass transition temperature of 30 ° C or less was not used, and it was found that warpage occurred at the time of curing, and dimensional stability was also large.

[產業上之利用可能性] [Industry use possibility]

藉由使用本發明之絕緣樹脂材料,可提供尺寸安定性高而且硬化時的翹曲小之絕緣樹脂材料。 By using the insulating resin material of the present invention, it is possible to provide an insulating resin material having high dimensional stability and small warpage at the time of hardening.

Claims (22)

一種絕緣樹脂材料,其係含有熱硬化性樹脂、無機填充材及玻璃轉移溫度為30℃以下的高分子樹脂之絕緣樹脂材料,相對於絕緣樹脂材料中的不揮發成分100質量%,前述無機填充材之含量為50~95質量%,將前述絕緣樹脂材料之硬化物在25℃~150℃的線膨脹係數當作A(ppm/℃),將在150℃~220℃的線熱膨脹係數當作B(ppm/℃)時,0≦B-A≦15。An insulating resin material containing a thermosetting resin, an inorganic filler, and an insulating resin material of a polymer resin having a glass transition temperature of 30° C. or lower, and the inorganic filler is 100% by mass based on the nonvolatile component in the insulating resin material. The content of the material is 50 to 95% by mass, and the coefficient of linear expansion of the cured material of the insulating resin material at 25 ° C to 150 ° C is regarded as A (ppm / ° C), and the coefficient of thermal expansion of the wire at 150 ° C to 220 ° C is regarded as When B (ppm / ° C), 0 ≦ BA ≦ 15. 一種絕緣樹脂材料,其係含有熱硬化性樹脂、無機填充材及玻璃轉移溫度為30℃以下的高分子樹脂之絕緣樹脂材料,相對於絕緣樹脂材料中的不揮發成分100質量%,前述無機填充材之含量為50~95質量%,前述高分子樹脂具有由丁二烯骨架、碳酸酯骨架、丙烯酸骨架及矽氧烷骨架中選出的1種以上之骨架。An insulating resin material containing a thermosetting resin, an inorganic filler, and an insulating resin material of a polymer resin having a glass transition temperature of 30° C. or lower, and the inorganic filler is 100% by mass based on the nonvolatile component in the insulating resin material. The content of the material is 50 to 95% by mass, and the polymer resin has one or more kinds of skeletons selected from a butadiene skeleton, a carbonate skeleton, an acrylic skeleton, and a decane skeleton. 如請求項1或2之絕緣樹脂材料,其中前述絕緣樹脂材料之硬化物在25℃~150℃的線熱膨脹係數為3~30ppm/℃,而且在150℃~220℃的線熱膨脹係數為5~32ppm/℃,前述絕緣樹脂材料之硬化物在25℃的彈性模數為0.5~14GPa。The insulating resin material according to claim 1 or 2, wherein the cured resin material has a linear thermal expansion coefficient of 3 to 30 ppm/° C. at 25° C. to 150° C., and a linear thermal expansion coefficient of 5° at 150° C. to 220° C. At 32 ppm/° C., the cured product of the above-mentioned insulating resin material has an elastic modulus at 25 ° C of 0.5 to 14 GPa. 如請求項1或2之絕緣樹脂材料,其中前述絕緣樹脂材料之硬化物在25℃~150℃的線熱膨脹係數為3~10ppm/℃,而且在150℃~220℃的線熱膨脹係數為5~15ppm/℃,前述絕緣樹脂材料之硬化物在25℃的彈性模數為0.5~6GPa。The insulating resin material according to claim 1 or 2, wherein the cured resin material has a linear thermal expansion coefficient of 3 to 10 ppm/° C. at 25° C. to 150° C., and a linear thermal expansion coefficient of 5° at 150° C. to 220° C. At 15 ppm/° C., the cured resin of the above-mentioned insulating resin material has an elastic modulus at 25 ° C of 0.5 to 6 GPa. 如請求項2之絕緣樹脂材料,其中將前述絕緣樹脂材料之硬化物在25℃~150℃的線膨脹係數當作A(ppm/℃),將在150℃~220℃的線熱膨脹係數當作B(ppm/℃)時,0≦B-A≦15。The insulating resin material according to claim 2, wherein the linear expansion coefficient of the hardened material of the insulating resin material at 25 ° C to 150 ° C is regarded as A (ppm / ° C), and the coefficient of thermal expansion of the wire at 150 ° C to 220 ° C is regarded as When B (ppm / ° C), 0 ≦ BA ≦ 15. 如請求項1或2之絕緣樹脂材料,其中將前述絕緣樹脂材料之硬化物在25℃~150℃的線膨脹係數當作A(ppm/℃),將在150℃~220℃的線熱膨脹係數當作B(ppm/℃)時,0≦B-A≦4。The insulating resin material according to claim 1 or 2, wherein the linear expansion coefficient of the hardened material of the insulating resin material at 25 ° C to 150 ° C is regarded as A (ppm / ° C), and the linear thermal expansion coefficient at 150 ° C to 220 ° C When B (ppm/°C), 0≦BA≦4. 如請求項1或2之絕緣樹脂材料,其中前述熱硬化性樹脂係環氧樹脂。The insulating resin material according to claim 1 or 2, wherein the thermosetting resin-based epoxy resin is used. 如請求項1或2之絕緣樹脂材料,其中前述熱硬化性樹脂係液狀環氧樹脂。The insulating resin material according to claim 1 or 2, wherein the thermosetting resin is a liquid epoxy resin. 如請求項1或2之絕緣樹脂材料,其中相對於絕緣樹脂材料中的不揮發成分100質量%,前述熱硬化性樹脂之含量為1~15質量%。The insulating resin material according to claim 1 or 2, wherein the content of the thermosetting resin is from 1 to 15% by mass based on 100% by mass of the nonvolatile component in the insulating resin material. 如請求項1或2之絕緣樹脂材料,其中前述無機填充材係矽石。The insulating resin material according to claim 1 or 2, wherein the inorganic filler is a vermiculite. 如請求項1或2之絕緣樹脂材料,其中前述高分子樹脂之數量平均分子量為300~100000。The insulating resin material according to claim 1 or 2, wherein the polymer resin has a number average molecular weight of 300 to 100,000. 如請求項1或2之絕緣樹脂材料,其中前述高分子樹脂之數量平均分子量為8000~20000。The insulating resin material according to claim 1 or 2, wherein the polymer resin has a number average molecular weight of 8,000 to 20,000. 如請求項1之絕緣樹脂材料,其中前述高分子樹脂具有由丁二烯骨架、碳酸酯骨架、丙烯酸骨架及矽氧烷骨架中選出的1種以上之骨架。The insulating resin material according to claim 1, wherein the polymer resin has one or more kinds of skeletons selected from the group consisting of a butadiene skeleton, a carbonate skeleton, an acrylic skeleton, and a decane skeleton. 如請求項1或2之絕緣樹脂材料,其中前述高分子樹脂具有丁二烯骨架、醯亞胺骨架及胺基甲酸酯骨架。The insulating resin material according to claim 1 or 2, wherein the polymer resin has a butadiene skeleton, a quinone imine skeleton, and a urethane skeleton. 如請求項1或2之絕緣樹脂材料,其中相對於絕緣樹脂材料中的不揮發成分100質量%,前述高分子樹脂之含量為1~30質量%。The insulating resin material according to claim 1 or 2, wherein the content of the polymer resin is from 1 to 30% by mass based on 100% by mass of the nonvolatile component in the insulating resin material. 一種接著薄膜,其係將如請求項1~15中任一項之絕緣樹脂材料在支持體上形成層所成。An adhesive film formed by forming a layer of an insulating resin material according to any one of claims 1 to 15 on a support. 一種薄片狀硬化物,其係將如請求項1~15中任一項之絕緣樹脂材料予以熱硬化所成。A sheet-like cured product obtained by thermally hardening an insulating resin material according to any one of claims 1 to 15. 一種薄片狀硬化物,其係藉由將如請求項1~15中任一項之絕緣樹脂材料在矽晶圓上形成層並使其熱硬化,在矽晶圓上形成薄片狀硬化物時之在25℃的翹曲量為0~5mm者。A sheet-like cured product obtained by forming a layer on a tantalum wafer and thermally hardening the insulating resin material according to any one of claims 1 to 15 to form a sheet-like cured product on the tantalum wafer. The amount of warpage at 25 ° C is 0 to 5 mm. 一種印刷配線板,其係在如請求項17之薄片狀硬化物上形成有導體層者。A printed wiring board formed by forming a conductor layer on a sheet-like cured product as claimed in claim 17. 一種印刷配線板,其係在如請求項18之薄片狀硬化物上形成有導體層者。A printed wiring board formed by forming a conductor layer on a sheet-like cured product as claimed in claim 18. 一種晶圓級晶片尺寸封裝,其係在如請求項17之薄片狀硬化物上形成有導體層者。A wafer level wafer size package in which a conductor layer is formed on a sheet-like cured material as claimed in claim 17. 一種晶圓級晶片尺寸封裝,其係在如請求項18之薄片狀硬化物上形成有導體層者。A wafer level wafer size package in which a conductor layer is formed on a sheet-like cured material as claimed in claim 18.
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WO2016129541A1 (en) * 2015-02-09 2016-08-18 味の素株式会社 Heat-curable resin composition
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006249415A (en) * 2005-02-09 2006-09-21 Toray Ind Inc Adhesive composition for semiconductor device, adhesive sheet for the semiconductor device given by using the same, substrate for connecting semiconductor, and the semiconductor device
TW200902672A (en) * 2007-01-10 2009-01-16 Hitachi Chemical Co Ltd Adhesive for connection of circuit member and semiconductor device using the same
JP2010074135A (en) * 2008-08-20 2010-04-02 Hitachi Chem Co Ltd Method of manufacturing semiconductor device and dicing-tape integral type adhesive sheet
JP2012049388A (en) * 2010-08-27 2012-03-08 Shin Etsu Chem Co Ltd Sheet for forming semiconductor wafer protective film

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4929623B2 (en) * 2004-06-21 2012-05-09 味の素株式会社 Thermosetting resin composition containing modified polyimide resin
JP2006137943A (en) * 2004-10-15 2006-06-01 Ajinomoto Co Inc Resin composition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006249415A (en) * 2005-02-09 2006-09-21 Toray Ind Inc Adhesive composition for semiconductor device, adhesive sheet for the semiconductor device given by using the same, substrate for connecting semiconductor, and the semiconductor device
TW200902672A (en) * 2007-01-10 2009-01-16 Hitachi Chemical Co Ltd Adhesive for connection of circuit member and semiconductor device using the same
JP2010074135A (en) * 2008-08-20 2010-04-02 Hitachi Chem Co Ltd Method of manufacturing semiconductor device and dicing-tape integral type adhesive sheet
JP2012049388A (en) * 2010-08-27 2012-03-08 Shin Etsu Chem Co Ltd Sheet for forming semiconductor wafer protective film

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