TW202122528A - Dicing tape and dicing die-bonding film - Google Patents

Abstract

Provided is a dicing tape or the like, which includes a base layer and an adhesive layer having a higher viscosity than that of the base layer, wherein a volume crystallinity calculated from the result of differential scanning calorimetry measurement of the base layer is in a range of 20 J/cm³ to 120 J/cm³ , and a thickness of the base layer is 80 μm or more.

Description

Slicing tape and slicing chip mucosal film

The present invention relates to a dicing tape used in the manufacture of semiconductor integrated circuits, and a dicing die film provided with the dicing tape.

Previously, diced die bonding films used in the manufacture of semiconductor integrated circuits have been known. Such a dicing die bonding film includes, for example, a dicing tape and a die bonding layer laminated on the dicing tape and then on the wafer. The dicing tape has a substrate layer and an adhesive layer in contact with the die-bonding layer. Such a diced die attach film is used in the manufacture of a semiconductor integrated circuit in the following manner, for example.

The method of manufacturing a semiconductor integrated circuit usually includes the following steps: a step before forming a circuit surface on a single side of a wafer by a high-integrated electronic circuit, and a step after cutting out the chip from the wafer with the circuit surface and assembling it .

The latter steps include, for example, the following steps: a dicing step of forming grooves on the wafer in order to sever the wafer into small chips (die); attaching the surface of the wafer on the opposite side of the circuit surface to the die bonding layer and The mounting step of fixing the wafer to the dicing tape; cutting the grooved wafer and the die bonding layer together to expand the gap between the wafers; peeling off the die between the die bonding layer and the adhesive layer, and taking it out The pick-up step of the chip (die) with the adhesive layer attached; the chip (die) with the adhesive layer attached to the die-bonding step of the adherend. Semiconductor integrated circuits are manufactured through these steps.

In the above-mentioned manufacturing method, the expanding step is performed by, for example, stretching the dicing tape along the radial direction at a low temperature below the freezing point in a state where the wafer is arranged on the die-bonding layer superimposed on the dicing tape, and then Stretching at room temperature expands the gap (notch) between adjacent wafers (die). Thereafter, in order to maintain the gap (notch), heat shrink occurs in a part of the dicing tape whose tension is reduced due to stretching. Specifically, by thermally shrinking the dicing tape on the outer side than the portion overlapping the cut wafer (die), the gap (notch) can be maintained.

However, in the expansion step performed under low temperature conditions, there are cases where the semiconductor wafer and the die bond layer cannot be cut together. In order to prevent such problems, it is desirable for the dicing tape to be able to cut the performance of the semiconductor wafer well through the expansion step under the low temperature condition.

In this regard, as the previous dicing tape, it is known that the initial elastic modulus at -10°C is 200 MPa or more and 380 MPa or less, and the Tanδ (loss elastic modulus/storage elastic modulus) at -10°C is 0.080. Above and 0.3 or less diced crystal tape (Patent Document 1). According to the dicing tape described in Patent Document 1, when a semiconductor wafer is attached via a die bond layer, the semiconductor wafer can be integrated with the die bond layer by an expansion step performed under low temperature conditions. And cut off. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2015-185591

[The problem to be solved by the invention]

However, it cannot be said that sufficient research has been conducted on the die-cutting die film or die-cutting tape that can cut the semiconductor wafer well in the low-temperature expansion step.

Therefore, the subject of the present invention is to provide a dicing tape and a dicing die sticking film that can cut a semiconductor wafer well in a low-temperature expansion step. [Technical means to solve the problem]

In order to solve the above-mentioned problems, the dicing tape of the present invention is characterized by having a substrate layer and an adhesive layer with higher adhesion than the substrate layer. The volume crystallinity of the substrate layer calculated from the result of differential scanning calorimetry is 20 J/cm ³ or more and 120 J/cm ³ or less, and the thickness of the base layer is 80 μm or more. The dicing tape with the above-mentioned structure can cut the semiconductor wafer well in the low-temperature expansion step.

Preferably, the dicing band has an endothermic peak in the spectrum measured by differential scanning calorimetry of the substrate layer, and the apex temperature of the endothermic peak is 100° C. or more. Thereby, since the crystallinity of the substrate layer becomes higher, there is an advantage that the mechanical energy based on expansion can be more efficiently transferred in the substrate layer.

The chip adhesive film of the present invention includes the above-mentioned chipping tape and a chip bonding layer attached to the chipping tape. [Effects of Invention]

According to the dicing tape and the dicing die bonding film of the present invention, the semiconductor wafer can be cut well in the low-temperature expansion step.

Hereinafter, one embodiment of the chip dicing film and the chip dicing tape of the present invention will be described with reference to the drawings.

The dicing die bonding film 1 of this embodiment includes a dicing tape 20 and an adhesive layer 22 laminated on the dicing tape 20 and then a die bonding layer 10 on a semiconductor wafer.

The dicing tape 20 of the present embodiment is usually a long sheet, and is stored in a wound state before use. The dicing die attach film 1 of this embodiment is attached to an annular frame having an inner diameter that is one circle larger than that of the silicon wafer to be severed, and used after being diced.

The dicing tape 20 of this embodiment includes a base material layer 21 and an adhesive layer 22 superposed on the base material layer 21.

In the dicing tape 20 of this embodiment, the volume crystallinity of the base layer 21 calculated from the result of differential scanning calorimetry is 20 J/cm ³ or more and 120 J/cm ³ or less, and the thickness of the base layer 21 is Above 80 μm. Since the dicing tape 20 of this embodiment has the above-mentioned structure, the semiconductor wafer can be cut well in the low-temperature expansion step.

The said volume crystallinity is the value calculated|required based on the differential scanning calorimetry (DSC measurement) of the base material layer 21, and the measurement result. Specifically, the differential scanning calorimetry (DSC measurement) of the base material layer 21 is implemented under the following measurement conditions. From the spectrum obtained by one measurement, the volume crystallinity calculated as follows is obtained. Specifically, using a commercially available DSC measuring device, approximately 10 mg of a measurement sample is weighed, and the temperature is increased from room temperature (approximately 20°C) to 200°C at a temperature increase rate of 5°C/min, and the measurement is performed in a nitrogen atmosphere. The measurement sample is produced by cutting the base material layer 21 in the thickness direction. The endothermic heat is calculated based on the area of the endothermic peak appearing in the spectrum obtained by differential scanning calorimetry (DSC measurement). The area of the endothermic peak is calculated by obtaining the baseline formed by connecting the point on the low temperature side and the point on the high temperature side with no heat change in the peak, and the area surrounded by the curve drawing the endothermic peak. The calculation of the endothermic amount is based on the endothermic peak accompanying the melting. Convert the calculated heat absorption into a value per unit volume. Furthermore, when the base material layer 21 is composed of multiple layers of different materials, for example, multiple endothermic peaks may appear in the measurement spectrum. When calculating the heat absorption, the heat absorption is calculated based on the area of each endothermic peak from each layer, and the sum of the heat absorption is divided by the total volume of the base layer 21 as the volume crystallinity of the base layer 21. The area of the endothermic peak appearing in the measurement spectrum is calculated according to the analysis software attached to the DSC measurement device. Furthermore, there are cases where exothermic peaks or curves based on the glass transition point appear in the measurement spectrum, but these are not regarded as endothermic peaks. In addition, the analysis software attached to the DSC measurement device is used to measure the peak starting point (hereinafter also referred to as point A), the apex of the peak (hereinafter also referred to as point C), and the end point of the endothermic peak appearing in the measurement spectrum. Hereinafter also referred to as the temperature of point B). Ideally, the area of the endothermic peak, the peak start point, the peak apex, and the peak end point are calculated based on the measurement results obtained using the specific DSC measuring device described in the following examples, and using the specific analysis software described in the following examples .

If the above-mentioned volume crystallinity is less than 20 J/cm ³ , the crystallinity of the base layer 21 is insufficient, and therefore, there is a risk of poor scission properties. On the other hand, if the above-mentioned volume crystallinity is greater than 120 J/cm ³ , the crystallinity of the base layer 21 is too high, and therefore, the base layer 21 may crack when it is expanded. The above-mentioned volume crystallinity is preferably 25 J/cm ³ or more, more preferably 26 J/cm ³ or more, and still more preferably 30 J/cm ³ or more. Thereby, it has the advantage of exerting better scission performance in the low-temperature expansion step. The above-mentioned volume crystallinity is preferably 100 J/cm ³ or less, more preferably 90 J/cm ³ or less, and still more preferably 82 J/cm ³ or less. Thereby, there is an advantage that the breakage of the base layer 21 during expansion is further suppressed.

For example, by forming the base layer 21 of a resin material with higher crystallinity, or performing slow cooling treatment or extension treatment when the base layer 21 is produced, the above-mentioned volume crystallinity can be further increased. On the other hand, for example, by forming the base layer 21 of a resin material with a lower crystallinity, or performing a quenching treatment or not performing a stretching treatment when the base layer 21 is produced, the above-mentioned volume crystallinity can be further reduced.

The spectrum measured by performing differential scanning calorimetry (DSC) on the substrate layer 21 preferably has an endothermic peak with a vertex (point C) in a range of 100° C. or more and 140° C. or less. The above-mentioned endothermic peak is, for example, an endothermic peak that appears accompanying the melting of the resin. By making the apex of the endothermic peak (point C) exist at 100°C or higher, it has the advantage of being able to quickly solidify after the end of the heat shrinkage and maintain the cut. In addition, it has the advantage of exhibiting better severability. The apex of the endothermic peak (point C) is more preferably present at 105°C or higher. By making the apex of the endothermic peak (point C) exist below 140°C, there is an advantage that heat shrinkage can occur sufficiently during heat shrinkage. The apex of the endothermic peak (point C) is more preferably present at 135°C or lower. Furthermore, when there are a plurality of endothermic peaks in the range of 100°C or higher and 140°C or lower, it is preferable that at least one endothermic peak among them satisfies the above-mentioned condition (peak apex). Similarly, it is preferable that at least one endothermic peak satisfies the following conditions (peak start point, end point, etc.).

For example, by forming the base layer 21 of a resin material with a higher melting point, or using a layer of a resin material with a higher melting point to form the base layer 21 of a laminated structure, or blending (blending) a resin material with a higher melting point In the base material layer 21, the apex of the endothermic peak (point C) can be shifted to a higher temperature. On the other hand, for example, by forming the base layer 21 of a resin material with a lower melting point, or using a layer of a resin material with a lower melting point to form the base layer 21 of a laminated structure, or mixing a resin material with a lower melting point (Blend) In the base material layer 21, the temperature at the apex (point C) of the endothermic peak can be shifted to a lower temperature.

The temperature difference between the peak starting point (point A) and the apex (point C) in the endothermic peak is preferably 40°C or less, more preferably 35°C or less. By making the above-mentioned temperature difference 40° C. or less, the melting of the base layer 21 can be completed with a smaller (narrow) temperature difference. Therefore, the curing and softening of the base material layer 21 can be achieved with a smaller temperature difference. Therefore, by causing the base layer 21 to heat shrink after the expansion, and quickly solidify after the heat shrink is completed, it is possible to efficiently maintain the distance (notch) between adjacent wafers (die). The temperature difference between the starting point (point A) and the apex (point C) of the endothermic peak can be 20°C or more.

For example, by further increasing the molecular weight dispersion of the resin (polymer) contained in the base layer 21, the temperature difference between the peak starting point (point A) and the apex (point C) in the endothermic peak can be further increased. For example, by further reducing the molecular weight dispersion of the resin (polymer) contained in the base layer 21, the temperature difference between the peak starting point (point A) and the apex (point C) in the endothermic peak can be further reduced.

For the above-mentioned dicing belt, in the above-mentioned endothermic peak of the base material layer 21, the temperature difference between the peak start point (point A) and the peak end point (point B) is preferably 60°C or less, more preferably 50°C the following. By making the above-mentioned temperature difference 60° C. or less, the temperature difference from the start of the melting of the base layer 21 to the end of the melting becomes smaller, and therefore, the curing and softening of the base layer 21 can be achieved with a smaller temperature difference. Therefore, there is an advantage that the above-mentioned heat shrinkage after expansion can be performed efficiently. The above-mentioned temperature difference may be 30°C or more.

For example, by further reducing the molecular weight dispersion of the resin (polymer) contained in the base layer 21, the temperature difference between the peak start point (point A) and the peak end point (point B) can be further reduced. On the other hand, for example, by further increasing the molecular weight dispersion of the resin (polymer) contained in the base layer 21, the temperature difference between the peak start point (point A) and the peak end point (point B) can be further increased. .

For the above-mentioned dicing tape, in the above-mentioned endothermic peak of the base material layer 21, the temperature of the peak starting point (point A) is preferably 70°C or higher, more preferably 80°C or higher. The peak starting point (point A) is an indicator of the temperature at which the base material layer 21 finishes curing. By making the temperature of the peak starting point above 70°C, the base material layer 21 temporarily softened by a heater starts to cool, and The relatively high temperature finishes curing. If the temperature is lower than 70°C, the curing of the base layer 21 is completed, and therefore, the above-mentioned heat shrinkage after expansion can be sufficiently performed. Therefore, it is possible to efficiently maintain a good cut after the expansion. The temperature of the peak onset (point A) can be 110°C or less, or 100°C or less.

For example, by forming the base layer 21 of a resin material with a higher melting point, or using a layer of a resin material with a higher melting point to form the base layer 21 of a laminated structure, or blending (blending) a resin material with a higher melting point To the base material layer 21, the temperature of the peak starting point (point A) can be shifted to a higher temperature. On the other hand, for example, by forming the base layer 21 of a resin material with a lower melting point, or using a layer of a resin material with a lower melting point to form the base layer 21 of a laminated structure, or mixing a resin material with a lower melting point (Blend) In the base material layer 21, the temperature of the peak starting point (point A) can be shifted to a lower temperature.

In the above-mentioned dicing tape, in the above-mentioned endothermic peak of the base material layer 21, the temperature of the peak end point (point B) is preferably 150°C or less, more preferably 140°C or less. The peak end point (point B) is an indicator of the temperature at which the base layer 21 finishes softening. By making the peak end point temperature below 150°C, even if the heating temperature of the heater is slightly lower, as long as the temperature is higher than 150°C, The base layer 21 will be sufficiently softened. Therefore, even if the heating temperature for softening is slightly lower, the above-mentioned thermal shrinkage can be performed efficiently, and therefore, it is possible to efficiently maintain a good cut after the expansion. The temperature at the peak end point (point B) may be 110°C or higher, or 120°C or higher.

For example, by forming the base layer 21 of a resin material with a lower melting point, or using a layer of a resin material with a lower melting point to form the base layer 21 of a laminated structure, or blending (blending) a resin material with a lower melting point In the base material layer 21, the temperature of the peak end point (point B) can be shifted to a lower temperature. On the other hand, for example, by forming the base layer 21 of a resin material with a higher melting point, or using a layer of a resin material with a higher melting point to form the base layer 21 of a laminated structure, or mixing a resin material with a higher melting point (Blend) In the base material layer 21, the temperature at the peak end point (point B) can be shifted to a higher temperature.

The base material layer 21 may have a single-layer structure or a multilayer structure. Each layer of the base material layer 21 is, for example, a metal foil, a fiber sheet such as paper or cloth, a rubber sheet, and a resin film. Examples of the fiber sheet constituting the base layer 21 include paper, woven fabric, non-woven fabric, and the like. As the material of the resin film, for example, polyolefin such as polyethylene (PE), polypropylene (PP), ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene-( Ethylene copolymers such as meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymer; polyethylene terephthalate (PET), polyethylene naphthalate (PEN) , Polybutylene terephthalate (PBT) and other polyesters; polyacrylate; polyvinyl chloride (PVC); polyurethane; polycarbonate; polyphenylene sulfide (PPS); aliphatic polyamide Amines, fully aromatic polyamides (aramid) and other polyamides; polyether ether ketone (PEEK); polyimine; polyether imine; polyvinylidene chloride; ABS (acrylonitrile-butadiene- Styrene copolymer); cellulose or cellulose derivatives; polysiloxane-containing polymers; fluorine-containing polymers, etc. These can be used individually by 1 type or in combination of 2 or more types.

The base material layer 21 is preferably made of a polymer material such as a resin film. When the base material layer 21 has a resin film, the resin film may be subjected to a stretching treatment or the like to control deformability such as elongation. For the surface of the base material layer 21, in order to improve the adhesion with the adhesive layer 22, surface treatment may be performed. As the surface treatment, oxidation treatment based on chemical or physical methods such as chromic acid treatment, ozone exposure, flame exposure, high voltage electric shock exposure, ionizing radiation treatment, etc. can be used. In addition, coating treatment based on coating agents such as thickening coating agents, primers, and adhesives can be performed.

The base material layer 21 is preferably composed of a plurality of layers, more preferably composed of at least three layers, and still more preferably composed of three layers. By making the base material layer 21 have a multilayer structure of multiple layers (for example, a three-layer structure), it is possible to laminate a layer with a higher elastic modulus and a layer with a lower elastic modulus. Therefore, it is possible to control the base material more easily. The advantage of the elastic modulus of layer 21. For example, in the case of only a substrate layer having a relatively high elastic modulus layer, the floating of the wafer or the cracking of the substrate may also occur during the expansion step. In addition, for example, when there is only a substrate layer with a relatively low elastic modulus layer, there are cases where sufficient stress for cutting by expansion cannot be transferred to the substrate layer.

The base layer 21 of the three-layer structure preferably has two non-elastomeric layers (X, X) formed of a non-elastomeric body and an elastomer layer (Y) arranged between the two non-elastomeric layers and formed of an elastomer ( X layer/Y layer/X layer). The elastomer layer has an elastic modulus of 200 MPa or less at room temperature. The elastomer layer is usually formed of a polymer material that exhibits rubber elasticity at room temperature (23°C). On the other hand, the non-elastomeric layer is a layer with an elastic modulus greater than 200 MPa at room temperature. Each layer of the elastomer having such a three-layer laminated structure is usually formed of resin. The elastomer having a three-layer laminated structure is produced by, for example, co-extrusion molding, and the three layers are integrated.

In the base material layer 21 of the three-layer structure, the ratio of the thickness of the inner layer to the thickness of one outer layer (Y thickness/X thickness) is preferably 5 or more and 15 or less.

The non-elastomeric layer arranged on the outside has, for example, a melting point of 100°C or more and 140°C or less. In addition, the non-elastomeric layer preferably has a molecular weight distribution dispersion (mass average molecular weight/number average molecular weight) of 3 or less when the constituent resin is subjected to GPC measurement.

The non-elastomeric layer (X) may include low-density polyethylene (LDPE), high-density polyethylene (HDPE), polypropylene, and the like. As the polypropylene, a homopolymer (homopolypropylene) or copolymers such as random polypropylene or block polypropylene and the like can be mentioned. The polypropylene may be metallocene polypropylene synthesized by using a metallocene catalyst. The non-elastomeric layer (X) preferably contains metallocene polypropylene.

On the other hand, the elastomer layer (Y) preferably contains an ethylene-vinyl acetate copolymer (EVA) or an α-olefin-based thermoplastic elastomer, and more preferably contains an ethylene-vinyl acetate copolymer (EVA). Examples of α-olefin-based thermoplastic elastomers include homopolymers of α-olefins and copolymers of two or more (X-olefins). The ethylene-vinyl acetate copolymer resin (EVA) may contain 5% by mass or more and 35% by mass or less of vinyl acetate structural units.

The thickness (total thickness) of the base layer 21 is 80 μm or more. The above-mentioned thickness may exceed 100 μm. The above-mentioned thickness may be 150 μm or less. The above value is the average of at least 3 measured values randomly selected. Hereinafter, for the thickness of the adhesive layer 22, the average value is similarly adopted. If the thickness of the base layer 21 is less than 80 μm, there is a possibility that stress cannot be uniformly applied to the entire base layer 21, and there is a possibility that the good cutting performance in the low-temperature expansion step may not be exhibited.

For the back side of the base layer 21 (the side where the adhesive layer 22 is not overlapped), in order to impart releasability, release agents (release agents) such as polysiloxane resins or fluorine resins can be used for release. Type processing. In terms of being able to impart active energy rays such as ultraviolet rays to the adhesive layer 22 from the back side, the base layer 21 is preferably a light-transmitting (ultraviolet-transmitting) resin film or the like.

The dicing tape 20 of the present embodiment may be provided with a release sheet covering one surface of the adhesive layer 22 (the surface of the adhesive layer 22 that does not overlap the base layer 21) in the state before use. When the die-bonding layer 10 having an area smaller than the adhesive layer 22 is arranged to be contained in the adhesive layer 22, the release sheet is arranged so as to cover both the adhesive layer 22 and the die-bonding layer 10. The peeling sheet is used to protect the adhesive layer 22 and is peeled off before attaching the die bonding layer 10 to the adhesive layer 22.

As the release sheet, for example, a plastic film or paper that has been surface-treated with a release agent such as a silicone-based, long-chain alkyl-based, fluorine-based, or molybdenum sulfide, can be used. In addition, as the release sheet, for example, polytetrafluoroethylene, polychlorotrifluoroethylene, polyvinyl fluoride, polyvinylidene fluoride, tetrafluoroethylene-hexafluoropropylene copolymer, chlorofluoroethylene-vinylidene fluoride copolymer can be used. Films made of fluorine-based polymers; films made of polyolefins such as polyethylene and polypropylene; films made of polyesters such as polyethylene terephthalate (PET). In addition, as the release sheet, for example, a plastic film or paper coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent can be used. Furthermore, the release sheet can be used as a supporting material for supporting the adhesive layer 22. In particular, when the adhesive layer 22 is superposed on the base layer 21, a release sheet can be suitably used. In detail, by overlapping the adhesive layer 22 on the base layer 21 in a state where the release sheet and the adhesive layer 22 are laminated, and peeling (transferring) the release sheet after the overlap, it is possible to overlap the base layer 21贴剂层22。 Adhesive layer 22.

In this embodiment, the adhesive layer 22 contains, for example, an acrylic polymer, an isocyanate compound, and a polymerization initiator. The adhesive layer 22 preferably has a thickness of 5 μm or more and 40 μm or less. The shape and size of the adhesive layer 22 are generally the same as the shape and size of the base layer 21.

In the dicing tape 20 of this embodiment, the ratio of the thickness of the adhesive layer 22 to the total thickness of the dicing tape 20 may be 5% or more and 30% or less.

The said acrylic polymer has at least the structural unit of the alkyl (meth)acrylate, the structural unit of the (meth)acrylate containing a hydroxyl group, and the structural unit of the (meth)acrylate containing a polymerizable group in a molecule|numerator. The structural unit is the unit constituting the main chain of the acrylic polymer. Each side chain in the above-mentioned acrylic polymer is contained in each structural unit constituting the main chain. Furthermore, in this specification, the expression "(meth)acrylate" means at least one of methacrylate and acrylate. Similarly, the expression "(meth)acrylic acid" means at least one of methacrylic acid and acrylic acid.

In the acrylic polymer contained in the adhesive layer 22, the above-mentioned structural unit can be ^{confirmed by NMR analysis such as 1} H-NMR and ¹³ C-NMR, thermal decomposition GC/MS analysis, and infrared spectroscopy. Furthermore, the molar ratio of the above-mentioned structural units in the acrylic polymer is usually calculated based on the blending amount (feeding amount) when polymerizing the acrylic polymer.

The structural unit of the above-mentioned alkyl (meth)acrylate is derived from an alkyl (meth)acrylate monomer. In other words, the molecular structure of the alkyl (meth)acrylate monomer after the polymerization reaction is the structural unit of the alkyl (meth)acrylate. The expression "alkyl" indicates the carbon number of the hydrocarbon moiety that is ester-bonded with (meth)acrylic acid. The hydrocarbon part of the alkyl part in the structural unit of the alkyl (meth)acrylate may be a saturated hydrocarbon or an unsaturated hydrocarbon. Furthermore, the alkyl moiety preferably does not contain a polar group containing oxygen (O) or nitrogen (N). This can suppress the extreme increase in the polarity of the alkyl polymer. Therefore, it is possible to prevent the adhesive layer 22 from having an excessive affinity for the die bond layer 10. Therefore, the dicing tape 20 can be separated from the die-bonding layer 10 more satisfactorily. The carbon number of the alkyl moiety may be 6 or more and 10 or less.

Examples of the structural unit of the alkyl (meth)acrylate include hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, nonyl (meth)acrylate, and (meth)acrylic acid. Each structural unit such as decyl ester.

The acrylic polymer has a structural unit of (meth)acrylate containing a hydroxyl group, and the hydroxyl group of the structural unit easily reacts with an isocyanate group. The adhesive layer 22 can be appropriately hardened by preliminarily coexisting an acrylic polymer having a structural unit of a hydroxyl-containing (meth)acrylate and an isocyanate compound in the adhesive layer 22. Therefore, the acrylic polymer can be sufficiently gelled. Therefore, the adhesive layer 22 can exhibit adhesive performance while maintaining the shape.

The structural unit of the hydroxyl-containing (meth)acrylate is preferably the structural unit of the hydroxyl-containing (meth)acrylate C2-C4 alkyl ester. The expression "C2~C4 alkyl" means the carbon number of the hydrocarbon moiety ester-bonded with (meth)acrylic acid. In other words, the hydroxyl-containing (meth)acrylic C2~C4 alkyl ester monomer means a monomer obtained by ester bonding of (meth)acrylic acid and an alcohol with a carbon number of 2 to 4 (usually a diol). The hydrocarbon portion of the C2~C4 alkyl group is usually a saturated hydrocarbon. For example, the hydrocarbon portion of the C2~C4 alkyl group is a linear saturated hydrocarbon or a branched saturated hydrocarbon. The hydrocarbon part of the C2~C4 alkyl group preferably does not contain a polar group containing oxygen (O) or nitrogen (N).

As the structural unit of the hydroxyl-containing (meth)acrylate C2~C4 alkyl ester, for example, hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, and hydroxyn-butyl (meth)acrylate can be cited. Or each structural unit of hydroxybutyl (meth)acrylate such as hydroxyisobutyl (meth)acrylate. Furthermore, in the structural unit of hydroxybutyl (meth)acrylate, the hydroxyl group (-OH group) can be bonded to the carbon (C) at the end of the hydrocarbon moiety, or can be bonded to the carbon outside the end of the hydrocarbon moiety. (C).

The said acrylic polymer contains the structural unit of the polymerizable group containing (meth)acrylate which has a polymerizable unsaturated double bond in a side chain. By making the acrylic polymer contain a polymerizable group-containing (meth)acrylate structural unit, the adhesive layer 22 can be cured by irradiating active energy rays (ultraviolet rays, etc.) before the pickup step. Specifically, by irradiating active energy rays such as ultraviolet rays, radicals are generated from the photopolymerization initiator, and by the action of the radicals, the acrylic polymers can be crosslinked with each other. Thereby, the adhesive force of the adhesive layer 22 before irradiation can be reduced by irradiation. In addition, the die bonding layer 10 can be peeled off from the adhesive layer 22 well. Furthermore, as active energy rays, ultraviolet rays, radiation, and electron beams can be used.

Specifically, the structural unit of the (meth)acrylate containing the polymerizable group may have the isocyanate group of the (meth)acrylate monomer containing the isocyanate group and the above-mentioned hydroxyl-containing (meth)acrylate The hydroxy group in the structural unit is a molecular structure obtained by urethane bonding.

The structural unit of the polymerizable group-containing (meth)acrylate having a polymerizable group can be prepared after the polymerization of the acrylic polymer. For example, after the copolymerization of the alkyl (meth)acrylate monomer and the hydroxyl-containing (meth)acrylate monomer, the hydroxyl group in a part of the structural unit of the hydroxyl-containing (meth)acrylate may be The isocyanate group of the polymerizable monomer of the cyanate group undergoes a urethane reaction, thereby obtaining the structural unit of the above-mentioned polymerizable group-containing (meth)acrylate.

The above-mentioned isocyanate group-containing (meth)acrylate monomer preferably has one isocyanate group and one (meth)acrylic acid group in the molecule. As said monomer, 2-(meth)acryloyloxyethyl isocyanate (2-isocyanatoethyl (meth)acrylate) is mentioned, for example.

The adhesive layer 22 of the dicing tape 20 in this embodiment further contains an isocyanate compound. A part of the isocyanate compound may be in a state after being reacted by a urethane reaction or the like. The isocyanate compound has a plurality of isocyanate groups in the molecule. By allowing the isocyanate compound to have a plurality of isocyanate groups in the molecule, it is possible to cause a crosslinking reaction between the acrylic polymers in the adhesive layer 22. In detail, by reacting one isocyanate group of the isocyanate compound with the hydroxyl group of the acrylic polymer, and reacting other isocyanate groups with the hydroxyl group of other acrylic polymers, the process can be carried out through the isocyanate compound. Cross-linking reaction.

Examples of the isocyanate compound include diisocyanates such as aliphatic diisocyanates, alicyclic diisocyanates, and araliphatic diisocyanates.

Furthermore, examples of the isocyanate compound include polymeric polyisocyanates such as dimers and trimers of diisocyanates; polymethylene polyphenylene polyisocyanates.

Furthermore, as the isocyanate compound, for example, a polyisocyanate obtained by reacting an excessive amount of the above-mentioned isocyanate compound with an active hydrogen-containing compound is mentioned. Examples of compounds containing active hydrogen include low-molecular-weight compounds containing active hydrogen and high-molecular-weight compounds containing active hydrogen. In addition, as the isocyanate compound, allophanate polyisocyanate, biuret polyisocyanate, etc. may also be used. The above-mentioned isocyanate compounds can be used singly or in combination of two or more kinds.

The isocyanate compound is preferably a reaction product of an aromatic diisocyanate and an active hydrogen-containing low-molecular-weight compound. In the reactant of the aromatic diisocyanate, since the reaction speed of the isocyanate group is relatively slow, excessive hardening of the adhesive layer 22 containing the aforementioned reactant is suppressed. The isocyanate compound is preferably one having three or more isocyanate groups in the molecule.

The polymerization initiator contained in the adhesive layer 22 is a compound capable of starting a polymerization reaction by the applied heat or light energy. By making the adhesive layer 22 contain a polymerization initiator, when thermal energy or light energy is applied to the adhesive layer 22, it is possible to cause a crosslinking reaction between acrylic polymers. Specifically, it is possible to start the polymerization reaction of the polymerizable groups with each other between the acrylic polymers having the structural unit of the (meth)acrylate containing the polymerizable group, so that the adhesive layer 22 can be hardened. Thereby, the adhesive force of the adhesive layer 22 can be reduced, and the die-bonding layer 10 can be easily peeled off from the hardened adhesive layer 22 in the pickup step. As the polymerization initiator, for example, a photopolymerization initiator, a thermal polymerization initiator, or the like can be used. As the polymerization initiator, a usual commercially available product can be used.

The adhesive layer 22 may further include other components in addition to the above-mentioned components. Examples of other ingredients include thickeners, plasticizers, fillers, antioxidants, antioxidants, ultraviolet absorbers, light stabilizers, heat-resistant stabilizers, antistatic agents, surfactants, light release agents, etc. . The types and usage amounts of other ingredients can be appropriately selected according to the purpose.

Next, the dicing die attach film 1 of this embodiment will be described in detail.

The dicing die bonding film 1 of this embodiment includes the above-mentioned die dicing tape 20 and the die bonding layer 10 laminated on the adhesive layer 22 of the die dicing tape 20. The die bonding layer 10 is adhered to the semiconductor wafer during the manufacture of the semiconductor integrated circuit.

The die bonding layer 10 may include at least one of a thermosetting resin and a thermoplastic resin. The die bonding layer 10 preferably includes a thermosetting resin and a thermoplastic resin.

Examples of thermosetting resins include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, thermosetting polyimide resins, and the like. As the above-mentioned thermosetting resin, only one type or two or more types may be used. In terms of containing fewer ionic impurities that may cause corrosion of semiconductor wafers, which are the bonding targets, the thermosetting resin is preferably an epoxy resin. As the hardener of epoxy resin, phenol resin is preferred.

Examples of the aforementioned epoxy resins include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, Either of the quince type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoin type, triglycidyl isocyanurate type or glycidylamine Epoxy resin.

Phenolic resin can act as a hardener for epoxy resin. Examples of phenol resins include polyhydroxystyrenes such as novolak-type phenol resins, resol-type phenol resins, and poly(p-hydroxystyrene). Examples of novolak-type phenol resins include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tertiary butylphenol novolak resin, nonylphenol novolak resin, and the like. As the above-mentioned phenol resin, only one type or two or more types may be used.

In the die-bonding layer 10, the hydroxyl group of the phenol resin is preferably 0.5 equivalent or more and 2.0 equivalent or less, and more preferably 0.7 equivalent or more and 1.5 equivalent or less with respect to 1 equivalent of the epoxy group of the epoxy resin. Thereby, the hardening reaction of the epoxy resin and the phenol resin can fully proceed.

When the die-bonding layer 10 contains thermosetting resin, the content of the above-mentioned thermosetting resin in the die-bonding layer 10 relative to the total mass of the die-bonding layer 10 is preferably 5% by mass or more and 60% by mass or less, More preferably, it is 10% by mass or more and 50% by mass or less. Thereby, the function as a thermosetting adhesive can be appropriately expressed in the die-bonding layer 10.

As the thermoplastic resin that can be contained in the die-bonding layer 10, for example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene -Acrylate copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon (trade name), phenoxy resin, acrylic Resin, saturated polyester resin such as PET or PBT, polyamide imide resin, fluororesin, etc. As the above-mentioned thermoplastic resin, an acrylic resin is preferable in terms of being able to further ensure the adhesiveness of the die-bonding layer 10 due to its low ionic impurities and high heat resistance. As the above-mentioned thermoplastic resin, only one type or two or more types may be used.

The above-mentioned acrylic resin is preferably a polymer having the most structural units of alkyl (meth)acrylate among the structural units in the molecule in terms of mass ratio. Examples of the alkyl (meth)acrylate include C2 to C4 alkyl (meth)acrylate. The said acrylic resin may contain the structural unit derived from the other monomer component which can be copolymerized with the alkyl (meth)acrylate monomer. As the above-mentioned other monomer components, for example, carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, Functional group-containing monomers such as acrylamide and acrylonitrile, or various other multifunctional monomers. In terms of being able to exert a higher cohesive force in the die-bonding layer 10, the above-mentioned acrylic resin is preferably an alkyl (meth)acrylate (especially (methyl) with a carbon number of 4 or less in the alkyl part). ) Alkyl acrylate) and a copolymer of carboxyl-containing monomers, nitrogen-containing monomers and polyfunctional monomers (especially polyglycidyl-based polyfunctional monomers), more preferably ethyl acrylate and acrylic acid Copolymer of butyl ester and acrylic acid and acrylonitrile and polyglycidyl (meth)acrylate.

In terms of easy setting of the elasticity or viscosity of the die-bonding layer 10 within a desired range, the glass transition temperature (Tg) of the acrylic resin is preferably -50°C or more and 50°C or less, more preferably 10°C Above and below 30°C.

When the die-bonding layer 10 contains thermosetting resin and thermoplastic resin, the content of the above-mentioned thermoplastic resin in the die-bonding layer 10 is relative to the organic components other than fillers (e.g., thermosetting resin, thermoplastic resin, hardening catalyst). Etc., the total mass of the silane coupling agent, dye) is preferably 30% by mass or more and 70% by mass or less, more preferably 40% by mass or more and 60% by mass or less, and more preferably 45% by mass or more and 55% by mass or less . Furthermore, the elasticity or viscosity of the die-bonding layer 10 can be adjusted by changing the content ratio of the thermosetting resin.

When the thermoplastic resin of the die bond layer 10 has a thermosetting functional group, as the thermoplastic resin, for example, an acrylic resin containing a thermosetting functional group can be used. The acrylic resin containing a thermosetting functional group preferably contains a structural unit derived from an alkyl (meth)acrylate in the molecule at the largest mass ratio. Examples of the alkyl (meth)acrylate include the alkyl (meth)acrylate exemplified above. On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group. The die bonding layer 10 preferably includes an acrylic resin containing a thermosetting functional group and a curing agent. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a compound having a plurality of phenolic structures as the curing agent. For example, the various phenol resins mentioned above can be used as the hardener.

The crystal bonding layer 10 preferably contains a filler. By changing the amount of filler in the die-bonding layer 10, the elasticity and viscosity of the die-bonding layer 10 can be adjusted more easily. Furthermore, the electrical conductivity, thermal conductivity, and elastic modulus of the die-bonding layer 10 can be adjusted. Examples of fillers include inorganic fillers and organic fillers. As the filler, an inorganic filler is preferred. Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, boron nitride, and crystalline materials. Silicon dioxide, or amorphous silicon dioxide and other silicon dioxide fillers. In addition, as the material of the inorganic filler, simple metals such as aluminum, gold, silver, copper, nickel, etc.; or alloys, etc., can be cited. It can be aluminum borate whiskers, amorphous carbon black, graphite and other fillers. The shape of the filler can be spherical, needle-like, scaly and other shapes. As the filler, only one of the above can be used or two or more of them can be used.

The average particle size of the filler is preferably 0.005 μm or more and 10 μm or less, more preferably 0.005 μm or more and 1 μm or less. By making the above-mentioned average particle size 0.005 μm or more, the wettability and adhesion to adherends such as semiconductor wafers are further improved. By making the above-mentioned average particle diameter 10 μm or less, the characteristics brought about by the added filler can be more fully exhibited, and the heat resistance of the die-bonding layer 10 can be further exhibited. The average particle size of the filler can be determined using, for example, a photometric particle size distribution meter (for example, the product name is "LA-910", manufactured by Horiba Manufacturing Co., Ltd.).

When the die-bonding layer 10 contains a filler, the content of the filler relative to the total mass of the die-bonding layer 10 is preferably 30% by mass or more and 70% by mass or less, more preferably 40% by mass or more and 60% by mass or less , More preferably, it is 42% by mass or more and 55% by mass or less.

The die-sticking layer 10 may contain other components as required. Examples of the above-mentioned other components include curing catalysts, flame retardants, silane coupling agents, ion scavengers, dyes, and the like. Examples of flame retardants include antimony trioxide, antimony pentoxide, and brominated epoxy resins. As the silane coupling agent, for example, β-(3,4-epoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxy propyl trimethoxy silane, γ-glycidoxy propyl Group methyl diethoxy silane and so on. Examples of ion scavengers include hydrotalcites, bismuth hydroxide, benzotriazole, and the like. As the above-mentioned other additives, only one kind or two or more kinds may be used.

From the viewpoint of easy adjustment of elasticity and viscosity, the die-bonding layer 10 preferably includes a thermoplastic resin (especially an acrylic resin), a thermosetting resin, and a filler.

The thickness of the die bond layer 10 is not particularly limited, and is, for example, 1 μm or more and 200 μm or less. The above-mentioned thickness may be 3 μm or more and 150 μm or less, or may be 5 μm or more and 100 μm or less. Furthermore, when the die-bonding layer 10 is a laminated body, the above-mentioned thickness is the total thickness of the laminated body.

The glass transition temperature (Tg) of the die-bonding layer 10 is preferably 0°C or higher, more preferably 10°C or higher. By setting the above-mentioned glass transition temperature to 0° C. or higher, the adhesive layer 10 can be easily cut by spreading at a low temperature. The upper limit of the glass transition temperature of the crystal bonding layer 10 is, for example, 100°C.

The die-bonding layer 10 may have a single-layer structure as shown in FIG. 1, for example. In this specification, a single layer means only a layer formed of the same composition. The form of a plurality of laminated layers formed from the same composition is also a single layer. On the other hand, the die-bonding layer 10 may have a multilayer structure formed by laminating two or more different compositions, for example.

When the diced die sticking film 1 of the present embodiment is used, the adhesive layer 22 is cured by irradiating active energy rays (for example, ultraviolet rays). In detail, in a state where the die bonding layer 10 with a semiconductor wafer adhered on one side and the adhesive layer 22 attached to the other side of the die bonding layer 10 are laminated, at least the adhesive layer 22 is irradiated with ultraviolet rays, etc. . For example, ultraviolet rays and the like are irradiated from the side where the base material layer 21 is arranged, and the ultraviolet rays and the like that have passed through the base material layer 21 reach the adhesive layer 22. The adhesive layer 22 is cured by irradiation of ultraviolet rays or the like. By hardening the adhesive layer 22 after irradiation, the adhesive force of the adhesive layer 22 can be reduced. Therefore, the adhesive layer 10 can be easily peeled off from the adhesive layer 22 after irradiation (the state with the semiconductor wafer attached) .

The chip adhesive film 1 of this embodiment may be provided with a peeling sheet covering one surface of the die bond layer 10 (the side of the die bond layer 10 that does not overlap the adhesive layer 22) in the state before use. The peeling sheet is used to protect the die bond layer 10 and is peeled off just before the adherend (for example, a semiconductor wafer) is attached to the die bond layer 10. As this peeling sheet, the same thing as the said peeling sheet can be used. The release sheet can be used as a support material for supporting the die bonding layer 10. When the die bonding layer 10 is superposed on the adhesive layer 22, a release sheet can be suitably used. Specifically, by stacking the die-bonding layer 10 on the adhesive layer 22 in a state where the release sheet and die-bonding layer 10 are laminated, and peeling (transferring) the release sheet after the overlap, it is possible to overlap the adhesive layer 22粘晶层10。 Sticky crystal layer 10.

Since the dicing die attach film 1 of this embodiment is configured as described above, it is possible to sever the semiconductor wafer well in the low-temperature expansion step described later.

Next, the manufacturing method of the dicing tape 20 and the dicing die sticking film 1 of this embodiment will be described.

The manufacturing method of the dicing die bonding film 1 of this embodiment includes: The step of manufacturing the dicing tape 20 (the manufacturing method of the dicing tape), and the step of overlapping the die-bonding layer 10 on the manufactured dicing tape 20 to produce the dicing die-bonding film 1.

The manufacturing method of the dicing tape (the steps of manufacturing the dicing tape) has: Synthesis step, which synthesizes acrylic polymer; The adhesive layer preparation step, which volatilizes the solvent from the adhesive composition containing the above-mentioned acrylic polymer, isocyanate compound, polymerization initiator, solvent, and other components appropriately added according to the purpose, to produce the adhesive layer 22; A step of making the base material layer, which makes the base material layer 21; and The laminating step involves laminating the base layer 21 and the adhesive layer 22 by bonding the adhesive layer 22 and the base layer 21 together.

In the synthesis step, for example, a C9~C11 (meth)acrylic acid C9~C11 alkyl ester monomer and a hydroxyl group-containing (meth)acrylate monomer are subjected to radical polymerization to synthesize an acrylic polymer intermediate. Free radical polymerization can be carried out by a usual method. For example, by dissolving the aforementioned monomers in a solvent, stirring while heating, and adding a polymerization initiator, an acrylic polymer intermediate can be synthesized. In order to adjust the molecular weight of the acrylic polymer, polymerization can also be carried out in the presence of a chain transfer agent. Then, a part of the hydroxyl group of the structural unit of the hydroxyl-containing (meth)acrylate contained in the acrylic polymer intermediate and the isocyanate group of the isocyanate-containing polymerizable monomer are passed through the urethane Chemical reaction and bonding. Thereby, a partial structural unit of the (meth)acrylate containing a hydroxyl group becomes a structural unit of the (meth)acrylate containing a polymerizable group. The urethane reaction can be carried out by a usual method. For example, in the presence of a solvent and a urethane catalyst, the acrylic polymer intermediate and the isocyanate group-containing polymerizable monomer are stirred while heating. Thereby, the isocyanate group of the isocyanate group-containing polymerizable monomer can be urethane-bonded with a part of the hydroxyl group of the acrylic polymer intermediate.

In the adhesive layer preparation step, for example, an acrylic polymer, an isocyanate compound, and a polymerization initiator are dissolved in a solvent to prepare an adhesive composition. The viscosity of the composition can be adjusted by changing the amount of solvent. Then, the adhesive composition is applied to the release sheet. As the coating method, a usual coating method such as roll coating, screen coating, and gravure coating is used. By performing solvent removal treatment or curing treatment on the applied composition, the applied adhesive composition is cured, and the adhesive layer 22 is produced.

In the substrate layer production step, the substrate layer 21 can be produced by forming a film by a normal method. As the film forming method, for example, a calendering film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a dry lamination method, etc. can be mentioned. Co-extrusion molding method can be used. In addition, as the base material layer 21, a commercially available film or the like can be used.

In the lamination step, the adhesive layer 22 in the state of being overlapped with the release sheet and the base material layer 21 are overlapped and laminated. Furthermore, the release sheet may be in a state of being overlapped on the adhesive layer 22 until it is used. Furthermore, in order to promote the reaction between the cross-linking agent and the acrylic polymer, and in order to promote the reaction between the cross-linking agent and the surface portion of the base layer 21, the aging process may be carried out at 50°C for 48 hours after the lamination step. Processing steps.

Through these steps, the dicing tape 20 can be manufactured.

The manufacturing method of the chip bonding film (the step of manufacturing the chip bonding film) includes: a resin composition preparation step for preparing the resin composition for forming the chip bonding layer 10; The manufacturing steps of the die bonding layer of the die bonding layer 10 made from the resin composition; and The attaching step of attaching the adhesive layer 10 to the adhesive layer 22 of the dicing tape 20 manufactured as described above.

In the resin composition preparation step, for example, the resin composition is prepared by mixing epoxy resin, epoxy resin curing catalyst, acrylic resin, phenol resin, solvent, etc., and dissolving each resin in the solvent. The viscosity of the composition can be adjusted by changing the amount of solvent. Furthermore, as these resins, commercially available products can be used.

In the manufacturing step of the die-bonding layer, for example, the resin composition prepared as described above is applied to the release sheet. The coating method is not particularly limited, and ordinary coating methods such as roll coating, screen coating, and gravure coating can be used. Then, as needed, the applied composition is cured by solvent removal treatment, hardening treatment, or the like, and the crystal bonding layer 10 is produced.

In the attaching step, the peeling sheet is peeled off from the adhesive layer 22 and the die bonding layer 10 of the dicing tape 20 respectively, and the die bonding layer 10 and the adhesive layer 22 are directly attached to each other. For example, it can be bonded by crimping. The temperature at the time of bonding is not particularly limited, and is, for example, 30°C or higher and 50°C or lower, preferably 35°C or higher and 45°C or lower. The linear pressure during bonding is not particularly limited, but is preferably 0.1 kgf/cm or more and 20 kgf/cm or less, more preferably 1 kgf/cm or more and 10 kgf/cm or less.

The diced die bond film 1 manufactured as described above is used, for example, as an auxiliary tool for manufacturing semiconductor integrated circuits. The following describes specific examples in use.

The method of manufacturing a semiconductor integrated circuit generally includes a step of cutting out a wafer from a semiconductor wafer on which a circuit surface is formed, and then assembling it. This step includes, for example, the following steps: in order to process the semiconductor wafer into a wafer (die) by a slicing process, a groove is formed on the semiconductor wafer, and then the semiconductor wafer is ground to reduce the thickness of the half-cutting step; One side of the semi-cut semiconductor wafer (for example, the side opposite to the circuit surface) is attached to the die bonding layer 10, and the semiconductor wafer is fixed to the die dicing tape 20; the semi-cut semiconductor The step of expanding the gap between the chips; the step of peeling off the bonding layer 10 and the adhesive layer 22 and taking out the semiconductor chip (die) with the bonding layer 10 attached; and attaching The semiconductor wafer (die) in the state of the die-bonding layer 10 is then attached to the die-bonding step of the adherend. When performing these steps, the dicing tape (chip dicing film) of this embodiment is used as a manufacturing auxiliary tool.

In the half-cutting step, as shown in FIGS. 2A to 2D, a half-cutting process for cutting the semiconductor integrated circuit into small pieces (die) is performed. Specifically, the wafer processing tape T is attached to the surface of the semiconductor wafer W on the side opposite to the circuit surface. In addition, the dicing ring R is attached to the tape T for wafer processing. In the state where the wafer processing tape T is attached, the dividing groove is formed. The back polishing tape G is attached to the surface where the grooves are formed, and on the other hand, the wafer processing tape T attached first is peeled off. The grinding process is performed with the back grinding tape G attached until the semiconductor wafer W reaches a predetermined thickness.

In the installation step, as shown in FIGS. 3A to 3B, the die-cutting ring R is mounted on the adhesive layer 22 of the die-cutting tape 20, and the half-cutting process is attached to the surface of the exposed die-bonding layer 10 Semiconductor wafer W. After that, the back polishing tape G is peeled off from the semiconductor wafer W.

In the expansion step, as shown in FIGS. 4A to 4C, after the dicing ring R is installed on the adhesive layer 22 of the dicing tape 20, it is fixed to the holder H of the expansion device. The lifting member U of the expanding device is lifted from the lower side of the dicing die-cutting film 1 to stretch the die-cutting die-cutting film 1 in a plane direction. Thereby, the semi-cut semiconductor wafer W is cut under a specific temperature condition. The above-mentioned temperature conditions are, for example, -20 to 0°C, preferably -15 to 0°C, more preferably -10 to -5°C. The expansion state is released by lowering the lifting member U (the low-temperature expansion step so far). Furthermore, in the expanding step, as shown in FIGS. 5A to 5B, the dicing tape 20 is stretched to expand the area under higher temperature conditions. Thereby, the adjacent semiconductor wafers that have been cut are separated in the plane direction of the film surface, and the cut (space) is further expanded (normal temperature expansion step).

In the pick-up step, as shown in FIG. 6, the semiconductor wafer in the state where the die-bonding layer 10 is attached is peeled off from the adhesive layer 22 of the dicing tape 20. Specifically, the ejector pin member P is raised, and the semiconductor wafer to be picked up is pushed up via the dicing tape 20. Hold the lifted semiconductor wafer with a suction jig J. In the die bonding step, the semiconductor chip in the state where the die bonding layer 10 is attached is attached to the adherend.

As described above, the dicing die-cutting film 1 (die-cutting tape 20) of this embodiment is used in the above steps. In the low-temperature expansion step, the die-cutting tape 20 is bonded to the die-cutting layer 10 with a wafer at a temperature below 0°C. The state is extended, and the wafer and the die bond layer 10 are cut together. Furthermore, in the expanding step at room temperature, the dicing tape 20 is extended. Furthermore, the temperature in the low-temperature expansion step is usually below 0°C, for example, a temperature of -15°C to 0°C. The temperature in the expansion step at room temperature is, for example, a temperature of 10°C to 25°C.

The matters disclosed in this manual include the following matters. (1) A dicing tape comprising a substrate layer and an adhesive layer with higher adhesiveness than the substrate layer. The volume crystallinity of the substrate layer calculated from the results of differential scanning calorimetry is 20 J/cm ³ or more And 120 J/cm ³ or less, and the thickness of the substrate layer is 80 μm or more. (2) The dicing tape described in (1) above, wherein the spectrum measured by differential scanning calorimetry of the substrate layer has an endothermic peak, and the apex temperature of the endothermic peak is 100°C or higher. (3) The dicing belt as described in (2) above, wherein the temperature difference between the peak starting point (point A) and the apex (point C) in the endothermic peak is 40°C or less. (4) The dicing belt described in (2) or (3) above, wherein in the endothermic peak, the temperature difference between the peak start point (point A) and the peak end point (point B) is 30°C or more and Below 60°C. (5) The dicing belt described in any one of (2) to (4) above, wherein in the endothermic peak, the temperature of the peak starting point (point A) is 70°C or higher. (6) The dicing belt described in any one of (2) to (5) above, wherein in the endothermic peak, the temperature at the end point (point B) of the peak is 150°C or less. (7) The dicing tape described in any one of (1) to (6) above, wherein the substrate layer has a single-layer structure or a laminated structure. (8) The diced tape as described in any one of (1) to (7) above, wherein the substrate layer is composed of at least three layers. (9) The dicing tape described in (8) above, wherein the substrate layer includes a three-layer structure, and has two non-elastomeric layers (X, X) formed of a non-elastomeric body, and two non-elastomeric layers (X, X) arranged on two non-elastomeric layers. Elastomer layer (Y) between body layers and formed of elastomer. (10) The dicing tape described in (9) above, wherein the substrate layer has a three-layer structure, and the ratio of the thickness of the inner layer to the thickness of one outer layer (Y thickness/X thickness) is 5 or more and 15 the following. (11) The dicing tape as described in (9) or (10) above, wherein the non-elastomeric layer (X) comprises a material selected from the group consisting of low-density polyethylene (LDPE), high-density polyethylene (HDPE) and polypropylene At least one of the group. (12) The dicing tape as described in any one of (9) to (11) above, wherein the elastomer layer (Y) contains ethylene-vinyl acetate copolymer (EVA). (13) The dicing tape as described in any one of (1) to (11) above, wherein the ratio of the thickness of the adhesive layer to the total thickness of the dicing tape is 5% or more and 30% the following. (14) A diced chip adhesive film comprising the chip dicing tape described in any one of (1) to (13) above and a chip bonded layer attached to the chip dicing tape. (15) The diced die bond film described in (14) above, wherein the die bond layer includes at least one of a thermosetting resin and a thermoplastic resin. (16) The diced die bond film as described in (14) or (15) above, wherein the thickness of the die bond layer is 1 μm or more and 200 μm or less.

The dicing tape and dicing adhesive film of this embodiment are as exemplified above, but the present invention is not limited to the dicing tape and dicing adhesive film exemplified above. That is, it is possible to adopt various forms used in the usual dicing tape and dicing die sticking film within the range that does not impair the effects of the present invention. [Example]

Next, the present invention will be explained in more detail with experimental examples, but the present invention is not limited to these.

The dicing tape is manufactured in the following manner. In addition, the dicing tape is used to produce a dicing die sticking film.

＜Substrate layer＞ The product shown below is used as a raw material to produce a three-layer base material layer or a single-layer base material layer. • Resin forming the inner layer Raw material name: Ultrathene 626 Ethylene-vinyl acetate copolymer resin (EVA contains 15% by mass of vinyl acetate) Made by Tosoh Corporation • Resin forming the inner layer Raw material name: Ultrathene 633 Ethylene-vinyl acetate copolymer resin (EVA contains 20% by mass of vinyl acetate) Made by Tosoh Corporation • Resin forming the inner layer Material name: Evaflex V523 Ethylene-vinyl acetate copolymer resin (EVA contains 33% by mass of vinyl acetate) Made in DOW-MITSUI POLYCHEMICALS company • Resin forming the inner layer Material name: Evaflex P1007 Ethylene-vinyl acetate copolymer resin (EVA contains 9% by mass of vinyl acetate) Product made in DOW-MITSUIPOLYCHEMICALS company •Resin constituting the base material layer of the comparative example Raw material name: Infuse 9530 α-olefin block copolymer resin Made by Dow Chemical • Resin forming the outer layer Material name: WINTEC WFX4M Metallocene polypropylene Product made in Japan Polypropylene company

(Forming of the substrate layer) The base material layer is formed using an extrusion T die head forming machine. The extrusion temperature is 190°C. The base layer of the 3-layer build-up type is co-extruded and integrated with a T die. After the integrated base layer (layered body) is sufficiently cured, the base layer is rolled into a roll for storage. Furthermore, the thickness ratio of each layer constituting the base layer and the total thickness of the base layer are shown in Table 1.

＜Adhesive layer＞ (Preparation of adhesive layer (adhesive composition)) The following raw materials were mixed to prepare the first resin composition. • INA (isononyl acrylate) 173 parts by mass • HEA (Hydroxyethyl Acrylate) 54.5 parts by mass • AIBN (2,2'-azobisisobutyronitrile) 0.46 parts by mass • 372 parts by mass of ethyl acetate Then, the first resin composition was put into the round-bottomed separable flask (volume 1 L), thermometer, nitrogen introduction tube, and stirring blade equipped with a round-bottomed separable flask for the polymerization experiment. While stirring the first resin composition, the liquid temperature of the first resin composition was adjusted to normal temperature (23°C), and at the same time, the process of replacing the inside of the round-bottom separable flask with nitrogen for 6 hours was performed. Then, while blowing nitrogen into the round-bottom separable flask, while stirring the first resin composition, the liquid temperature of the first resin composition was maintained at 62°C for 3 hours. After that, the temperature was maintained at 75°C for 2 hours to implement the polymerization reaction of the above-mentioned INA, HEA, and AIBN to prepare the second resin composition. After that, the flow of nitrogen into the round bottom separable flask was stopped. After cooling the second resin composition to normal temperature, the following raw materials are added to the second resin composition. •2-methacryloxyethyl isocyanate Compounds with polymerizable carbon-carbon double bonds Product name "KARENZ MOI", manufactured by Showa Denko Corporation) 52.5 parts by mass • Dibutyl tin dilaurate IV (manufactured by Wako Pure Chemical Industries, Ltd.) 0.26 parts by mass The obtained third resin composition was stirred at 50°C for 24 hours in an atmospheric atmosphere. Finally, with respect to 100 parts by mass of the polymer solid content of the third resin composition, the following raw materials were added. •Isocyanate compound (trade name "COLONATE L", manufactured by Tosoh Corporation) 0.75 parts by mass • 2 parts by mass of photopolymerization initiator (trade name "Omnirad 127", manufactured by IGM Resins) Then, the third resin composition was diluted with ethyl acetate so that the solid content concentration reached 20% by mass to prepare an adhesive composition.

＜Manufacturing of crystal cut tape＞ Using an applicator, apply the adhesive composition to one surface of the substrate layer so that the thickness after drying becomes 10 μm. The substrate layer after applying the adhesive composition is heated and dried at 110° C. for 3 minutes to form an adhesive layer, thereby manufacturing a dicing tape.

＜Production of slicing and sticking film＞ (Making of the sticky layer) The following raw materials were added to methyl ethyl ketone and mixed to obtain a composition for a sticky crystal layer having a solid content concentration of 20% by mass. •Acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX, glass transition temperature 12°C) 100 parts by mass • Epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation) 46 parts by mass • 51 parts by mass of phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Chemical Co., Ltd.) •Spherical silicon dioxide (trade name "SO-25R", manufactured by ADMATECHS) 191 parts by mass • Hardening catalyst (trade name "CUREZOL PHZ", manufactured by Shikoku Chemical Industry Co., Ltd.) 0.6 parts by mass Next, a release liner obtained by applying silicone treatment to a PET separator (thickness 50 μm) was prepared. Using an applicator, apply the composition for the die-bonding layer to the treatment surface of the release liner so that the thickness after drying becomes 10 μm. The solvent was volatilized from the die-bonding layer composition by a drying treatment at 130°C for 2 minutes, and a die-bonding wafer with a die-bonding layer laminated on the release liner was obtained. (The bonding of the die-bonding layer and the die-cutting tape) Then, the adhesive layer of the dicing tape and the adhesive layer in the bonding wafer (one side of the unlaminated peeling sheet) are bonded together. After that, the release liner was peeled off from the die-bonding layer to produce a die-cutting die-bonding film provided with the die-bonding layer.

As described above, according to the above-mentioned method, the dicing tape and the dicing die sticking film of the embodiment and the comparative example were respectively manufactured. Table 1 shows the composition of each dicing tape.

[Table 1] Example 1 Example 2 Example 3 Example 4 Comparative example 1 Comparative example 2 Substrate layer 3 layers 3 layers 3 layers 1 story 1 story 3 layers Inner layer EVA Ultrathene 626 (va15%) EVA Ultrathene 633 (va20%) EVA Evaflex V523 (va33%) EVA Evaflex P1007 (va9%) α-olefin Infuse 9530 EVA Ultrathene 633 (va20%) Outer PP Metallocene PP WINTEC WFX4M Metallocene PP WINTEC WFX4M Metallocene PP WINTEC WFX4M - - Metallocene PP WINTEC WFX4M Thickness ratio (outer layer/inner layer/outer layer) 1/10/1 1/10/1 1/10/1 - - 1/10/1 The thickness ratio of the inner layer 5/6 5/6 5/6 1 1 5/6 The thickness ratio of the outer layer 1/6 1/6 1/6 - - 1/6 Total layer thickness [μm] 125 125 125 125 125 70 Endothermic peak Peak start point (A) 87°C 92°C 82°C 36°C 74°C 85°C Peak end point (B) 135°C 140°C 130°C 103°C 126°C 132°C Peak of the Peak (C) 122°C 127°C 117°C 93°C 122°C 120°C Heat absorption 65 52 28 90 6 52 The inner layer[J/g] 59 46 twenty two 90 6 46 The outer layer[J/g] 6 6 6 - - 6 Inner/outer 9.8 7.7 3.7 - - 7.7 proportion Inner layer [g/cm ³ ] 0.91 0.92 0.93 0.91 0.90 0.92 Outer layer [g/cm ³ ] 0.91 0.91 0.91 - - 0.91 Volume crystallinity [J/cm ³ ] 59 48 26 82 5 48 Performance evaluation Cutting rate [%] 〇 〇 〇 △ X × (base material cracked)

The calculation method of volume crystallinity is shown below. On the basis of multiplying the heat absorption of the inner layer by the thickness ratio of the inner layer, multiply it by the proportion of the inner layer to calculate the volume crystallinity corresponding to the inner layer. Similarly, the volume crystallinity is also calculated for the outer layer. And add these calculated values. The total value is used as the volume crystallinity.

＜Measurement of Differential Scanning Calorimetry (DSC)＞ A sample for measurement was taken out from the dicing tape of each example and each comparative example. The sample for measurement is taken out from the base material layer by cutting the base material layer in the thickness direction. Using a commercially available DSC measuring device, approximately 10 mg of the measurement sample was weighed, and the temperature was increased from room temperature (approximately 20°C) to 200°C at a temperature increase rate of 5°C/min, and the measurement was performed in a nitrogen atmosphere. Use the analysis software attached to the device to measure the temperature of the endothermic peak area, endothermic peak start point, peak apex and peak end point appearing in the measurement spectrum. When there are multiple peaks in the measurement spectrum, measure the temperatures mentioned above for each peak. The details of the DSC measuring device and analysis software are as follows. Measuring device: made by TA Instruments Japan Device name DSC Q-2000 Analysis software: TA Instruments Universal Analysis 2000 version 4.5A The spectra of the substrate layer of Example 1 when differential scanning calorimetry (DSC measurement) is performed are shown in FIG. 7A and FIG. 7B. Figures 7A and 7B respectively show the same measurement results in different forms. In Fig. 7A, the oblique line in the spectrum indicates the temperature. Similarly, the spectrogram when the base material layer of Comparative Example 1 was subjected to differential scanning calorimetry (DSC measurement) is shown in FIGS. 8A and 8B.

＜Performance evaluation (Evaluation of severability)＞ Using the diced die attach film produced in each example and each comparative example, performance evaluation was performed in the following manner. After the bare wafer (diameter 300 mm) single-sided bonded wafer processing tape (trade name "V-12SR2", manufactured by Nitto Denko), the bare wafer is fixed to the dicing ring through the wafer processing tape , Using a dicing device (manufactured by DISCO, model 6361), from the side opposite to the side where the wafer processing tape is attached, the wafer becomes a square of 2 mm×2 mm to form a grid-like groove (25 μm wide, 100 μm deep). Next, the wafer processing tape (trade name "V-12SR2", manufactured by Nitto Denko Corporation) was peeled from the wafer, and the back polishing tape was attached to the surface where the grooves were formed, and a back polishing machine (manufactured by DISCO, model no. DGP8760), to grind bare wafers with a thickness of 30 μm (0.030 mm). At a temperature of 60°C, the ground wafer with back grinding tape is attached to the adhesive film surface of the dicing die bonding tape. Then, the diced die sticking film attached to the ground wafer is attached to the ring and fixed, and then the back polishing tape is peeled off. After that, a cold expansion unit was used to cut the adhesive layer under the conditions of expansion temperature of -5°C, expansion speed of 100 mm/sec, and expansion amount of 14 mm. Then, the room temperature expansion is performed under the conditions of room temperature, expansion speed of 1 mm/sec, and expansion amount of 10 mm. In addition, under the condition of maintaining the expanded state, the outer periphery of the diced chip mucosa was thermally contracted under the conditions of a heating temperature of 200°C, a heating distance of 18 mm, and a rotation speed of 5°/sec. In the die-cut wafer after heat shrinkage, the cleavage of the die-bonding layer is confirmed with a microscope, and the case where the cleavage rate is more than 90% is recorded as ○, and the case where the fracture rate is less than 90% and more than 80% is recorded as △, Recorded as × when it reaches 80%.

Table 1 shows the measurement results of differential scanning calorimetry (DSC) and performance evaluation (evaluation of scission properties) of the substrate layer of the dicing tape of each example and each comparative example.

It can be understood from the above evaluation results that the dicing die attach film of the embodiment can cut the semiconductor wafer well in the low-temperature expansion step compared with the die attaching film of the comparative example.

In the dicing tape of the example, the volume crystallinity of the substrate layer calculated from the DSC measurement spectrum is 20 J/cm ³ or more and 120 J/cm ³ or less, and the thickness of the substrate layer is 80 μm or more. Since the above-mentioned volume crystallinity is 20 J/cm ³ or more, the crystallinity of the substrate layer is relatively large, and therefore, the semiconductor wafer can be cut well in the low-temperature expansion step. In addition, since the above-mentioned volume crystallinity is 120 J/cm ³ or less, the crystallinity of the base layer does not increase more than necessary, and therefore, the base layer 21 can be suppressed from cracking during expansion. By using the dicing tape of the embodiment having a substrate layer with such physical properties in the manufacture of semiconductor integrated circuits, it is possible to suppress the cracking of the substrate layer 21 and expand at a low temperature. Cuts semiconductor wafers well in the middle. [Industrial availability]

The dicing tape and the dicing die-bonding film of the present invention can be suitably used as auxiliary tools when manufacturing semiconductor integrated circuits, for example.

1: slicing chip mucous film 10: Sticky crystal layer 20: Cut crystal belt 21: Substrate layer 22: Adhesive layer G: Back grinding tape H: Retainer for expansion device J: Adsorption fixture P: ejector component R: Slicing ring T: Tape for wafer processing U: Jack up member W: semiconductor wafer

FIG. 1 is a cross-sectional view obtained by cutting the dicing die attach film of the present embodiment along the thickness direction. 2A is a cross-sectional view schematically showing the half-cutting process in the manufacturing method of the semiconductor integrated circuit. 2B is a cross-sectional view schematically showing the half-cutting process in the manufacturing method of the semiconductor integrated circuit. 2C is a cross-sectional view schematically showing the half-cutting process in the manufacturing method of the semiconductor integrated circuit. 2D is a cross-sectional view schematically showing the half-cutting process in the manufacturing method of the semiconductor integrated circuit. FIG. 3A is a cross-sectional view schematically showing the state of the mounting step in the manufacturing method of the semiconductor integrated circuit. FIG. 3B is a cross-sectional view schematically showing the state of the mounting step in the manufacturing method of the semiconductor integrated circuit. 4A is a cross-sectional view schematically showing the expansion step at a low temperature in the manufacturing method of the semiconductor integrated circuit. 4B is a cross-sectional view schematically showing the expansion step at a low temperature in the manufacturing method of the semiconductor integrated circuit. 4C is a cross-sectional view schematically showing the expansion step at a low temperature in the manufacturing method of the semiconductor integrated circuit. FIG. 5A is a cross-sectional view schematically showing the expansion step at room temperature in the manufacturing method of the semiconductor integrated circuit. FIG. 5B is a cross-sectional view schematically showing the expansion step at room temperature in the manufacturing method of the semiconductor integrated circuit. FIG. 6 is a cross-sectional view schematically showing the state of the pickup step in the manufacturing method of the semiconductor integrated circuit. Fig. 7A shows the first spectrum of an example (Example 1) of differential scanning calorimetry. Fig. 7B shows the second spectrum of an example of differential scanning calorimetry (Example 1). Fig. 8A shows the first spectrum of an example of differential scanning calorimetry (Comparative Example 1). Fig. 8B shows a second spectrum of an example of differential scanning calorimetry (Comparative Example 1).

Claims (3)

A dicing tape comprising a substrate layer and an adhesive layer with higher adhesiveness than the substrate layer. The volume crystallinity of the substrate layer calculated from the result of differential scanning calorimetry is 20 J/cm ³ or more and 120 J /cm ³ or less, and the thickness of the base layer is 80 μm or more. The dicing tape of claim 1, wherein the spectrum measured by differential scanning calorimetry of the substrate layer has an endothermic peak, and the apex temperature of the endothermic peak is 100°C or higher. A dicing die-cutting film is provided with the die-cutting tape as claimed in claim 1 or 2, and a die-cutting layer attached to the die-cutting tape.

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