TWI825285B - Cutting tape with adhesive film - Google Patents

Abstract

The present invention provides a dicing tape with an adhesive film, which is suitable for placing a dicing tape (DT) on the dicing tape (DT) in an expansion step using the dicing tape with an adhesive film in order to obtain a semiconductor wafer with an adhesive film. The adhesive film is well separated, and is suitable for suppressing lifting of the semiconductor wafer attached with the adhesive film from DT after separation and achieving good pick-up in the pick-up step. The dicing belt X with an adhesive film of the present invention includes a dicing belt 10 and an adhesive film 20 . Then, the film 20 is peelably and closely adhered to the adhesive layer 12 of the dicing belt 10 . The peeling adhesion force between the adhesive layer 12 and the adhesive film 20 of the test piece exposed to 300 mJ/cm 2 ultraviolet irradiation at 60°C is compared to the adhesive of the test piece exposed to 300 mJ/cm ² ultraviolet irradiation ^at 22°C. The peel adhesion ratio between the layer 12 and the adhesive film 20 is 0.8 to 2.

Description

Cutting tape with adhesive film

The present invention relates to a dicing tape with an adhesive film that can be used in the manufacturing process of semiconductor devices.

In the manufacturing process of semiconductor devices, in order to obtain a semiconductor wafer with an adhesive film having a size equivalent to that of the wafer for die bonding, that is, a semiconductor wafer with an adhesive film, a dicing tape with an adhesive film is sometimes used. The die-cutting tape with an adhesive film includes, for example, a die-cutting tape including a base material and an adhesive layer, and an adhesive film that is releasably in close contact with the adhesive layer side. The subsequent film has a disc shape that exceeds the size of the semiconductor wafer as the workpiece. For example, a dicing tape having a size that exceeds the disc shape of the adhesive film is concentrically attached to the adhesive layer side thereof.

As one method of obtaining a semiconductor wafer with an adhesive film by using a dicing tape with an adhesive film, it is known to divide the adhesive film by expanding the dicing tape in the dicing tape with an adhesive film. step-by-step method. In this method, first, the semiconductor wafer is bonded on the adhesive film of the dicing tape with the adhesive film. For example, the semiconductor wafer is processed so that it can be subsequently cut together with the separation of the adhesive film to be singulated into a plurality of semiconductor wafers. Secondly, in a specific expansion device, in order to separate the adhesive film from the adhesive film on the dicing tape to produce a plurality of small adhesive film pieces that are closely connected to the semiconductor wafer, the dicing tape with the adhesive film is separated. The cutting band expands in its radial direction (expanding step). In this expansion step, the semiconductor wafer on the adhesive film is also divided at a portion corresponding to the dividing portion of the adhesive film, and the semiconductor wafer is placed on a dicing belt or a dicing belt with the adhesive film. Divided into a plurality of semiconductor wafers. Secondly, in a specific die-cutting and die-bonding device equipped with a pick-up step mechanism, each semiconductor wafer and the adhesive film closely connected thereto with a size corresponding to the wafer are pushed up from the lower side of the die-cutting belt using the push-pin member of the pick-up mechanism. After starting, pick up from the cutting belt (picking step). In this way, a semiconductor wafer with an adhesive film is obtained. The semiconductor chip with the adhesive film is fixed to an adherend such as a mounting substrate through die bonding through the adhesive film. Technology related to the dicing tape with an adhesive film used in the above-mentioned manner is described, for example, in the following Patent Documents 1 and 2. [Prior technical literature] [Patent Document]

[Patent Document 1] Japanese Patent Application Publication No. 2007-2173 [Patent Document 2] Japanese Patent Application Laid-Open No. 2010-177401

[Problem to be solved by the invention]

In the dicing tape with an adhesive film, a UV-curable adhesive layer has been used as the dicing tape adhesive layer in the past. In the manufacturing process of a semiconductor device using such a dicing tape with an adhesive film, before the above-mentioned pickup step, the dicing tape adhesive with a plurality of semiconductor wafers with an adhesive film is applied in an ultraviolet irradiation device. The UV (ultraviolet, ultraviolet) irradiation of the layer intentionally reduces the adhesive force of the adhesive layer (ultraviolet irradiation step).

The ultraviolet irradiation device includes, for example, a chamber for performing UV irradiation. The workpiece to be irradiated by UV (for example, the dicing tape with an adhesive film that holds the semiconductor wafer obtained by the above-mentioned singulation) is placed in the chamber in a state of being stored in a cassette in a set of plural pieces, and is delivered to UV irradiation step. In a semiconductor device production line, there are situations where the ultraviolet irradiation device is continuously operated, for example, such ultraviolet irradiation steps are sequentially repeated for a new group of UV irradiation target workpieces.

However, if the ultraviolet irradiation device is continuously operated, there is a tendency for the ambient temperature in the chamber to continue to perform continuous or intermittent UV irradiation to increase. The temperature in the chamber during UV irradiation will affect the degree of UV curing of the UV-curable dicing tape adhesive layer of the dicing tape with the adhesive film, thus affecting the degree of decrease in the adhesive force of the adhesive layer. . Specifically, the higher the temperature in the chamber when UV irradiation is present, the lower the degree of UV curing of the UV curable dicing tape adhesive layer of the dicing tape with the adhesive film, and the smaller the degree of decrease in the adhesive force. tendency.

Therefore, in the ultraviolet irradiation step, dicing tapes with adhesive films (semiconductor wafers with adhesive films that are singulated on the dicing tapes) that have been irradiated by UV in a high-temperature environment have previously existed. In the subsequent pickup step, the semiconductor wafer with the adhesive film attached is not properly picked up from the dicing tape.

The present invention was conceived based on the above circumstances, and its object is to provide a dicing belt with an adhesive film that is suitable for use in obtaining a semiconductor wafer with an adhesive film. The adhesive film on the dicing tape is well separated during the expansion step, and is suitable for suppressing the lifting of the separated semiconductor wafer with the adhesive film on the dicing tape and achieving good pickup in the pick-up step. [Technical means to solve problems]

The dicing tape with adhesive film provided by the present invention includes a dicing tape and an adhesive film. The dicing tape has a laminated structure including a base material and an ultraviolet curable adhesive layer. The film is then peelably and closely adhered to the adhesive layer of the dicing tape. Furthermore, regarding the dicing tape with an adhesive film of the present invention, after being exposed to ultraviolet irradiation of 300 mJ/ ^cm2 at a temperature of 60°C, the adhesive layer and the adhesive film in the second test piece were peeled off by T-shape The second peeling adhesion force measured by the test is compared to the T-type peeling test between the adhesive layer and the adhesive film in the first test piece after being exposed to ultraviolet irradiation of 300 mJ/ ^cm2 at a temperature of 22°C. The first peel adhesion ratio is 0.8 to 2, preferably 0.9 to 1.8. The first and second test pieces are test pieces cut out from the die-cut tape with an adhesive film of the present invention, and have the die-cut tape and the adhesive film that is peelably and closely adhered to the ultraviolet curable adhesive layer thereof. In the present invention, the ultraviolet irradiation received by the test piece refers to the ultraviolet irradiation of the adhesive layer in the test piece across the base material (irradiation from the side of the base material). Ultraviolet irradiation of 300 mJ/cm ² can be achieved, for example, by irradiating ultraviolet rays with an intensity of 150 mW/cm ² for 2 seconds. In addition, the above-mentioned T-type peeling test for measuring the first and second peeling adhesion was carried out under the conditions of 23° C. and a peeling speed of 300 mm/min. The dicing tape with an adhesive film of the present invention having the above structure can be used in the process of obtaining a semiconductor wafer with an adhesive film in the manufacture of semiconductor devices.

Regarding the dicing tape with an adhesive film of the present invention, as mentioned above, after being irradiated with ultraviolet light of 300 mJ/ ^cm2 at a temperature of 60°C, the gap between the adhesive layer and the adhesive film in the second test piece is T The second peel adhesion measured by the T-type peel test is compared to the T-type peel test between the adhesive layer and the adhesive film in the first test piece after being exposed to ultraviolet irradiation of 300 mJ/ ^cm2 at a temperature of 22°C. The first peel adhesion ratio is 0.8 to 2, preferably 0.9 to 1.8. When the temperature dependence of the decrease in adhesive force due to ultraviolet irradiation in the ultraviolet curable adhesive layer of the dicing tape falls within this range, it is easy to implement ultraviolet irradiation in the ultraviolet irradiation step that actually involves changes in ambient temperature. The adhesion before irradiation (adhesion before UV irradiation) and the adhesion after UV irradiation (adhesion after UV irradiation) are balanced, so it is easy to achieve both the separation of the adhesive film on the dicing tape and the wafer. The relatively high adhesion required by the adhesive layer of the dicing tape in the above-mentioned expansion step and the adhesive force required by the adhesive layer of the dicing tape in the above-mentioned pickup step for picking up the semiconductor wafer with the adhesive film from the dicing tape Relatively low adhesion. The present inventors obtained this knowledge. Specifically, this will be shown using Examples and Comparative Examples described below.

The composition in which the above-mentioned ratio is 2 or less, preferably 1.8 or less, is suitable for ensuring the adhesion of the adhesive layer of the wafer tape after UV irradiation at room temperature on the basis of ensuring a sufficiently strong adhesion before UV irradiation. Not only the adhesion achieved when irradiated, but also the adhesion achieved after ultraviolet irradiation in a high temperature environment of about 60°C becomes a sufficiently weak adhesive force after UV irradiation required in the pick-up step. And the practical one. In addition, the adhesive layer of the dicing tape that fully ensures the relatively high adhesion required in the expansion step is suitable for suppressing the semiconductor wafer with the adhesive film on the dicing tape between the expansion step and the ultraviolet irradiation step. The rise of the self-cut crystal belt.

As described above, the dicing tape with an adhesive film of the present invention is suitable for dividing the adhesive film on the dicing tape well in the expansion step, and is suitable for suppressing the self-destruction of the semiconductor wafers with an adhesive film after being divided. Lifting of the cutting tape and achieving good pick-up in the pick-up step.

The above-mentioned first peeling adhesive force of the dicing tape with an adhesive film of the present invention is preferably 0.03 to 0.15 N/20 mm. This structure is preferable in that the adhesive layer of the dicing tape keeps the post-UV irradiation adhesive force within a practical range when actual ambient temperature changes in the ultraviolet irradiation step are incorporated.

Peel-off adhesion between the adhesive layer of the die-cut tape and the adhesive film in the die-cut tape with an adhesive film of the present invention measured by the T-type peel test under the conditions of 23° C. and a peeling speed of 300 mm/min. The preferred force is 1.5~4.5 N/20 mm. This structure is suitable for the case where the dicing tape with an adhesive film of the present invention is used for the expansion step. Between the expansion step and the ultraviolet irradiation step, the adhesive film on the dicing tape is The film of the semiconductor wafer inhibits the lifting of the self-cut wafer. Furthermore, this structure is preferable in that the adhesive layer of the dicing tape is practical as an adhesive force before UV irradiation, and also allows post-UV irradiation adhesion incorporating the actual ambient temperature change in the ultraviolet irradiation step. The force is within the practical range.

The peeling adhesive force between the adhesive layer and the adhesive film in the dicing tape with the adhesive film of the present invention is measured by the T-type peel test under the conditions of -5°C and a peeling speed of 300 mm/min. The best value is 0.5~2 N/20 mm. This structure is suitable for allowing the adhesive film on the dicing tape to be well separated when using the dicing tape with an adhesive film of the present invention to perform an expansion step under low temperature conditions of, for example, 0° C. or lower. break. Furthermore, this structure is preferable in that the adhesive layer of the dicing tape is practical as an adhesive force before UV irradiation, and also allows post-UV irradiation adhesion incorporating the actual ambient temperature change in the ultraviolet irradiation step. The force is within the practical range.

The storage modulus (tensile storage modulus) of the adhesive film in the dicing tape with adhesive film of the present invention at 25° C. is preferably 1 to 5 GPa, more preferably 1.2 to 4 GPa. This structure is preferable in terms of ensuring the adhesion of the adhesive film to the adhesive layer of the dicing tape at room temperature and a temperature range close to it.

The storage modulus of the adhesive film in the dicing tape with adhesive film of the present invention at -5°C is preferably 3 to 5 GPa, more preferably 3.5 to 4.5 GPa. This structure is suitable for ensuring the disconnection property of an adhesive film under low-temperature conditions, for example, 0 degreeC or less.

The die-cut tape in the die-cut tape with an adhesive film of the present invention is tested for a die-cut tape test piece with a width of 10 mm, under the conditions of an initial distance between the chucks of 100 mm, -5°C, and a tensile speed of 300 mm/min. In the tensile test conducted, the tensile stress at a strain value of 20% is preferably 3 to 12 MPa, and more preferably 3.5 to 11.5 MPa. This configuration is suitable for allowing the adhesive film on the dicing tape to be well separated when the expansion step is performed using the dicing tape with an adhesive film of the present invention under temperature conditions of, for example, 0° C. or lower. break.

FIG. 1 is a schematic cross-sectional view of a dicing tape X with an adhesive film according to an embodiment of the present invention. The dicing tape X with the adhesive film has a laminated structure including the dicing tape 10 and the adhesive film 20 . The dicing belt 10 has a laminated structure including a base material 11 and an adhesive layer 12 . The adhesive layer 12 has an adhesive surface 12a on the adhesive film 20 side. Then, the film 20 is peelably and closely adhered to the adhesive layer 12 of the dicing belt 10 or its adhesive surface 12a. In this embodiment, the dicing belt 10 and the adhesive film 20 have a disk shape and are arranged concentrically as shown in FIG. 2 . This kind of dicing tape X with an adhesive film can be used in the process of obtaining a semiconductor wafer with an adhesive film in the manufacture of semiconductor devices.

The base material 11 of the dicing belt 10 in the dicing belt X with an adhesive film is a device that functions as a support in the dicing belt 10 or in the dicing belt X with an adhesive film. The base material 11 is, for example, a plastic base material having ultraviolet light transmittance. As the plastic base material, a plastic film can be preferably used. Examples of the constituent materials of the plastic base material include: polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, Fully aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, aromatic polyamide, fluororesin, cellulose resin, and silicone resin. Examples of the polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, and block copolymerized polypropylene. Homopolypropylene, polybutylene, polymethylpentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene- Butene copolymer, and ethylene-hexene copolymer. Examples of the polyester include polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. The base material 11 may include one kind of material, or may include two or more materials. The base material 11 may have a single-layer structure or a multi-layer structure. In addition, when the base material 11 includes a plastic film, it may be an unstretched film, a uniaxially stretched film, or a biaxially stretched film.

The surface on the adhesive layer 12 side of the base material 11 may also be subjected to physical treatment, chemical treatment, or primer treatment for improving the adhesion with the adhesive layer 12 . Examples of physical treatments include corona treatment, plasma treatment, sand matte processing, ozone exposure treatment, flame exposure treatment, high-voltage electric shock exposure treatment, and ionizing radiation treatment. Examples of chemical treatment include chromic acid treatment.

The thickness of the base material 11 is preferably 40 μm or more from the viewpoint of ensuring the strength for the base material 11 to function as a support in the dicing tape 10 or the dicing tape X with an adhesive film. , preferably 50 μm or more. Moreover, from the viewpoint of achieving appropriate flexibility in the dicing tape 10 or the dicing tape X with an adhesive film, the thickness of the base material 11 is preferably 200 μm or less, and more preferably 180 μm or less.

The adhesive layer 12 of the dicing belt 10 is an ultraviolet curable adhesive layer whose adhesive force is reduced by ultraviolet irradiation. Examples of the adhesive used to form the ultraviolet curable adhesive layer include the following additive-type ultraviolet curable adhesives, which contain a base polymer such as an acrylic polymer as an acrylic adhesive, and an ultraviolet polymerizable UV-polymerizable monomer components or oligomer components with functional groups such as carbon-carbon double bonds.

The acrylic polymer preferably contains the largest amount of monomer units derived from (meth)acrylate in terms of mass ratio. "(Meth)acrylic" means "acrylic acid" and/or "methacrylic acid". Examples of the (meth)acrylate that is a monomer unit used to form an acrylic polymer, that is, a (meth)acrylate that is a constituent monomer of an acrylic polymer, include: (meth)acrylic acid alkyl group ester, cycloalkyl (meth)acrylate, and aryl (meth)acrylate. Examples of (meth)acrylic acid alkyl esters include: (meth)acrylic acid methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, and third butyl ester. , Pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester ( That is, lauryl ester), tridecyl ester, myristyl ester, cetyl ester, stearyl ester, and eicosyl ester. Examples of the (meth)acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl (meth)acrylic acid. Examples of the aryl (meth)acrylate include phenyl (meth)acrylate and benzyl (meth)acrylate. As the constituent monomer of the acrylic polymer, one type of (meth)acrylic acid ester may be used, or two or more types of (meth)acrylic acid ester may be used. As the (meth)acrylate used in the acrylic polymer, it is preferable to use at least one selected from the group consisting of 2-ethylhexyl (meth)acrylate and lauryl (meth)acrylate. In addition, in order for the adhesive layer 12 to appropriately express basic characteristics such as adhesiveness based on (meth)acrylate, the ratio of (meth)acrylate in the overall monomers constituting the acrylic polymer is preferable. It is 25 mol% or more, more preferably, it is 30 mol% or more. Moreover, this ratio is, for example, 70 mol% or less.

The above-mentioned acrylic polymer may contain one or two or more monomers derived from other monomers that can be copolymerized with (meth)acrylate from the viewpoint of improving its cohesion and heat resistance, for example. unit. Examples of other copolymerizable monomers used to form the monomer units of the acrylic polymer, that is, other copolymerizable monomers that are constituent monomers of the acrylic polymer, include carboxyl group-containing monomers and acid anhydride monomers. , hydroxyl-containing monomers, nitrogen-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, and phosphate group-containing monomers. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, and fumarate. acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl-containing monomer include: (meth)acrylic acid 2-hydroxyethyl ester, (meth)acrylic acid 2-hydroxypropyl ester, (meth)acrylic acid 4-hydroxybutyl ester, (meth)acrylic acid 6-hydroxyhexyl ester, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and (4-hydroxymethyl)acrylate cyclohexyl) methyl ester. Examples of the nitrogen-containing monomer include acrylamide, acrylamide, and acrylonitrile. Examples of the epoxy group-containing monomer include: (meth)acrylic acid glycidyl ester and (meth)acrylic acid methyl glycidyl ester. Examples of the sulfonic acid group-containing monomer include: styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, and (meth)acrylamide. Propanesulfonic acid, and (meth)acryloyloxynaphthalenesulfonic acid. Examples of the phosphate group-containing monomer include 2-hydroxyethylacrylyl phosphate. As the copolymerizable monomer used in the acrylic polymer, it is preferable to use a hydroxyl-containing monomer and a nitrogen-containing monomer. As the hydroxyl group-containing monomer, it is preferred to use at least one selected from the group consisting of 2-hydroxyethyl (meth)acrylate and 4-hydroxybutyl (meth)acrylate. As the nitrogen-containing monomer, it is preferable to use acryloylcarboxylate.

When the acrylic polymer contains a monomer unit derived from a hydroxyl-containing monomer, that is, when the acrylic polymer contains a hydroxyl-containing monomer as its constituent monomer, the acrylic polymer contains The ratio of the hydroxyl-containing monomer as the constituent monomer is preferably 13 to 30 mol%, more preferably 15 to 28 mol%. This structure is preferable from the viewpoint of ease of control of the peeling force between the adhesive layer 12 and the adherend.

When the above-mentioned acrylic polymer contains a monomer unit derived from a nitrogen-containing monomer, that is, when the acrylic polymer contains a nitrogen-containing monomer as its constituent monomer, the acrylic polymer as a constituent unit The ratio of nitrogen-containing monomers in the body is preferably 5 to 25 mol%, more preferably 6 to 23 mol%. This structure is preferable from the viewpoint of ensuring the adhesion of the adhesive layer 12 to the adherend.

When the above-mentioned acrylic polymer contains acryloyl iodine (ACMO) as its constituent monomer, the ratio of acryloyl iodine to alkyl (meth)acrylate (ACMO) in the acrylic polymer is ear ratio) is preferably 0.25 or more. This structure is preferable from the viewpoint of ensuring the adhesion of the adhesive layer 12 to the adherend. From the viewpoint of achieving an adhesive force that is not too strong for the adhesive layer 12, the ratio is, for example, 0.9 or less, preferably 0.8 or less.

The acrylic polymer may contain monomer units derived from polyfunctional monomers that can be copolymerized with monomer components such as (meth)acrylate to form a cross-linked structure in the polymer skeleton. Examples of such polyfunctional monomers include hexylene glycol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, and (poly)propylene glycol di(meth)acrylate. , neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate ) acrylate, polyglycidyl(meth)acrylate, polyester(meth)acrylate, and urethane(meth)acrylate. "(Meth)acrylate" means "acrylate" and/or "methacrylate". As the constituent monomer of the acrylic polymer, one type of polyfunctional monomer can be used, or two or more types of polyfunctional monomers can be used. In order for the adhesive layer 12 to appropriately express basic characteristics such as adhesiveness based on (meth)acrylate, the ratio of the polyfunctional monomer in the total monomers constituting the acrylic polymer is preferably 40 mol. % or less, and preferably 30 mol% or less.

Acrylic polymers can be obtained by polymerizing raw material monomers used to form them. Examples of the polymerization method include solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the manufacturing process of a semiconductor device using the dicing tape 10 or the dicing tape X with an adhesive film, the adhesive layer of the dicing tape 10 or the dicing tape X with an adhesive film The number of low molecular weight substances in 12 is preferably less. In this case, the weight average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000. The weight average molecular weight (Mw) of an acrylic polymer refers to a standard polystyrene-converted value measured by gel permeation chromatography (GPC).

The adhesive layer 12 or the adhesive used to form the adhesive layer 12 may contain, for example, a cross-linking agent in order to increase the average molecular weight of a base polymer such as an acrylic polymer. Examples of cross-linking agents used to form a cross-linked structure by reacting with base polymers such as acrylic polymers include polyisocyanate compounds, epoxy compounds, polyol compounds, and nitropropyl compounds that are polyfunctional isocyanate-based cross-linking agents. aridine compounds, and melamine-based cross-linking agents. To suppress the temperature dependence of the adhesive force decrease due to ultraviolet irradiation of the adhesive layer 12 (the higher the ambient temperature during ultraviolet irradiation, the lower the progress of ultraviolet curing of the adhesive layer 12, and the smaller the degree of decrease in the adhesive force. From the viewpoint of tendency), the cross-linking agent is preferably a polyisocyanate compound which is a polyfunctional isocyanate-based cross-linking agent.

The content of the cross-linking agent in the adhesive layer 12 or the adhesive composition used to form it is preferably 0.1 parts by mass or more, more preferably 0.3 parts by mass relative to 100 parts by mass of the base polymer such as an acrylic polymer. or more, more preferably 0.5 parts by mass or more. The content is preferably 5 parts by mass or less, more preferably 4 parts by mass or less, still more preferably 3 parts by mass or less. This structure is preferable from the viewpoint of the adhesion of the adhesive layer 12 to the annular frame and the suppression of the temperature dependence of the adhesive force decrease due to ultraviolet irradiation.

Examples of the ultraviolet polymerizable monomer component used to form the ultraviolet curable adhesive include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, and pentaerythritol triacrylate. (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate )Acrylate. Examples of the ultraviolet polymerizable oligomer component used to form the ultraviolet curable adhesive include urethane-based, polyether-based, polyester-based, polycarbonate-based, polybutadiene-based, and the like. Oligomers, and those with a molecular weight of about 100 to 30,000 are suitable. The total content of ultraviolet polymerizable monomer components or oligomer components in the ultraviolet curable adhesive is determined within a range that can appropriately reduce the adhesive force of the formed adhesive layer 12, relative to acrylic polymers and other bases. 100 parts by mass of the polymer is preferably 5 to 500 parts by mass, more preferably 40 to 150 parts by mass. In addition, as an additive type ultraviolet curing adhesive, for example, the one disclosed in Japanese Patent Application Laid-Open No. Sho 60-196956 can also be used.

Examples of the ultraviolet curable adhesive used for the adhesive layer 12 include the following intrinsic ultraviolet curable adhesives, which are contained in a polymer side chain or a polymer main chain and have a terminal at the end of the polymer main chain. It is a basic polymer with UV polymerizable carbon-carbon double bonds and other functional groups. This type of intrinsic ultraviolet curable adhesive is preferable in terms of suppressing unintended changes over time in the adhesive properties caused by the transfer of low molecular weight components in the formed adhesive layer 12 .

As the base polymer contained in the intrinsic type ultraviolet curable adhesive, it is preferable to use an acrylic polymer as the basic skeleton. As the acrylic polymer forming the basic skeleton, the above-mentioned acrylic polymer can be used. An example of a method for introducing ultraviolet polymerizable carbon-carbon double bonds into an acrylic polymer is to copolymerize raw material monomers containing a monomer having a specific functional group (first functional group) to obtain an acrylic polymer. After polymerization, a compound having a specific functional group (second functional group) that can react and bond with the first functional group and an ultraviolet polymerizable carbon-carbon double bond is subjected to ultraviolet polymerization to maintain the carbon-carbon double bond. Condensation reaction or addition reaction is carried out on acrylic polymer in a stable state.

Examples of combinations of the first functional group and the second functional group include: carboxyl group and epoxy group, epoxy group and carboxyl group, carboxyl group and aziridinyl group, aziridinyl group and carboxyl group, hydroxyl group and isocyanate group , isocyanato group and hydroxyl group. Among these combinations, from the viewpoint of the ease of following the reaction, a combination of a hydroxyl group and an isocyanate group, or a combination of an isocyanate group and a hydroxyl group is preferred. In addition, since it is technically difficult to produce a polymer having a highly reactive isocyanate group, from the viewpoint of ease of production or acquisition of an acrylic polymer, an acrylic polymer is more preferred. The case where the above-mentioned first functional group is a hydroxyl group and the above-mentioned second functional group is an isocyanate group. In this case, examples of an isocyanate compound having both a UV-polymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, a UV-polymerizable unsaturated functional group-containing isocyanate compound, include Isocyanate (meth)acrylate. Examples of the isocyanate group-containing (meth)acrylate include 2-(meth)acryloxyethyl isocyanate, (meth)acrylyl isocyanate, and m-isopropenyl-α,α -Dimethylbenzyl isocyanate.

When the acrylic polymer used to form an intrinsic type ultraviolet curable adhesive contains an isocyanate group-containing (meth)acrylate as a constituent monomer, the acrylic polymer as a constituent monomer The ratio of isocyanate group-containing (meth)acrylate is preferably 12 to 25 mol% (isocyanate-containing group added to the main chain of an acrylic polymer used to form an intrinsic type of ultraviolet curable adhesive) In this embodiment, the acid group (meth)acrylate is a constituent monomer of the acrylic polymer forming the adhesive). This structure is preferable from the viewpoint of controlling the adhesive force or peeling force of the adhesive layer 12 by changing the adhesive force during use of the dicing tape X with the adhesive film. At the same time, this configuration is also preferable from the viewpoint of suppressing the temperature dependence of the adhesive force decrease due to ultraviolet irradiation of the adhesive layer 12 .

The acrylic polymer used to form the intrinsic ultraviolet curable adhesive preferably contains (meth)acrylic acid alkyl esters such as 2-hydroxyethyl (meth)acrylate or lauryl (meth)acrylate, (meth)acrylic acid alkyl esters, (meth)acrylic acid alkyl esters, hydroxyl group-containing monomers such as 2-hydroxyethyl acrylate or 4-hydroxybutyl (meth)acrylate, and (methyl) isocyanate groups such as 2-(meth)acryloyloxyethyl isocyanate As the constituent monomer, acrylate preferably contains (meth)acrylic acid alkyl esters such as 2-hydroxyethyl (meth)acrylate or lauryl (meth)acrylate, 2-hydroxyethyl (meth)acrylate or Hydroxyl-containing monomers such as 4-hydroxybutyl (meth)acrylate, nitrogen-containing monomers such as acryloyl hydroxyethyl isocyanate, and isocyanate-containing (methyl) monomers such as 2-(meth)acryloxyethyl isocyanate. acrylic acid ester as the constituent monomer. This structure is preferable from the viewpoint of controlling the adhesive force or peeling force of the adhesive layer 12 by changing the adhesive force during use of the dicing tape X with the adhesive film.

The adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketool compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, and dioxime compounds. Benzophenone compounds, 9-oxosulfide𠮿 Compounds, camphorquinone, halogenated ketones, acylphosphine oxides, and acylphosphates. Examples of α-ketool compounds include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)one and α-hydroxy-α,α'-dimethylbenzene. Ethyl ketone, 2-methyl-2-hydroxypropiophenone, and 1-hydroxycyclohexylphenylketone. Examples of acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethan-1-one, and 2,2-diethoxy Acetophenone, and 2-methyl-1-[4-(methylthio)-phenyl]-2-𠰌linylpropane-1. Examples of benzoin ether-based compounds include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal compound include benzildimethyl ketal. Examples of the aromatic sulfonyl chloride-based compound include 2-naphthalene sulfonyl chloride. Examples of the photoactive oxime-based compound include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime. Examples of the benzophenone compound include benzophenone, benzoyl benzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. As 9-oxysulfide𠮿 Compounds, for example: 9-oxysulfur 𠮿 , 2-chloro-9-oxosulfide𠮿 , 2-Methyl 9-oxosulfide𠮿 , 2,4-dimethyl 9-oxosulfide𠮿 , isopropyl 9-oxosulfide𠮿 ,2,4-Dichloro9-oxosulfide𠮿 , 2,4-diethyl 9-oxosulfide𠮿 , and 2,4-diisopropyl 9-oxosulfide𠮿 . The content of the photopolymerization initiator in the adhesive layer 12 is, for example, 0.05 to 10 parts by mass relative to 100 parts by mass of a base polymer such as an acrylic polymer.

In addition to the above-mentioned components, the adhesive layer 12 or the adhesive used to form it may also contain cross-linking accelerators, adhesion-imparting agents, anti-aging agents, and colorants such as pigments or dyes. Colorants can also be compounds that are colored by radiation exposure. Examples of such compounds include leuco dyes.

The thickness of the adhesive layer 12 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and more preferably 5 to 25 μm. This structure is preferable in terms of balancing the adhesive force of the adhesive layer 12 with respect to the adhesive film 20 before and after ultraviolet curing, for example.

The diced tape 10 having the above composition was subjected to a tensile test on a diced tape test piece with a width of 10 mm under the conditions of an initial distance between the chucks of 100 mm, -5°C, and a tensile speed of 300 mm/min. The tensile stress represented by a strain value of 20% is preferably 3 to 12 MPa, and more preferably 3.5 to 11.5 MPa.

In order to ensure the above-mentioned structure related to the tensile stress of the dicing belt 10, the base material 11 is preferably a single-layer structure base material made of ethylene-vinyl acetate copolymer (EVA), or a base material with a thickness of 50 Multi-layer structure substrate with EVA layer above μm.

The adhesive film 20 in the die-cutting tape X with the adhesive film is configured to function as a thermosetting adhesive for die bonding. The film 20 may then have a composition containing a thermosetting resin and a thermoplastic resin, or may have a composition containing a thermoplastic resin having a thermosetting functional group that can react with a hardener to generate a bond as a resin component. The adhesive film 20 may have a single-layer structure or a multi-layer structure with different compositions between adjacent layers.

When the adhesive film 20 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, and polyurethane resin. , silicone resin, and thermosetting polyimide resin. The film 20 may then contain one kind of thermosetting resin, or may contain two or more thermosetting resins. Epoxy resin tends to contain less ionic impurities that may cause corrosion of the semiconductor wafer to be bonded, so it is preferred as the thermosetting resin in the adhesive film 20 . Moreover, as a hardener for making an epoxy resin develop thermosetting property, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, N type, phenol novolak type, o-cresol novolak type, trishydroxyphenylmethane type, tetraphenolethane type, hydantoin type, triglycidyl isocyanurate type, and glycidylamine Type epoxy resin. Phenol novolak-type epoxy resin, o-cresol novolak-type epoxy resin, biphenyl-type epoxy resin, trishydroxyphenylmethane-type epoxy resin, and tetraphenolethane-type epoxy resin are rich in hardening properties The reactivity and heat resistance of the phenol resin of the agent are excellent, so it is preferable as the epoxy resin in the adhesive film 20 .

Examples of phenol resins that function as a hardener for epoxy resins include novolak-type phenol resins, resol-type phenol resins, and polyoxystyrenes such as polyparahydroxystyrene. Examples of the novolak-type phenol resin include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin. The film 20 may then contain one type of phenolic resin, or may contain two or more phenolic resins as hardeners for the epoxy resin. When phenol novolac resin or phenol aralkyl resin is used as a hardener for an epoxy resin used as a die-bonding adhesive, it tends to improve the connection reliability of the adhesive. Therefore, as a ring in the adhesive film 20 It is better to use hardener for oxy resin.

When the adhesive film 20 contains an epoxy resin and a phenol resin as its hardener, the two resins are preferably used in an amount of 0.5 to 2.0 equivalents relative to 1 equivalent of the epoxy group in the epoxy resin, and the hydroxyl group in the phenol resin is preferably 0.5 to 2.0 equivalents. It is best to prepare it at a ratio of 0.8 to 1.2 equivalents. This structure is preferable in that the curing reaction of the epoxy resin and the phenol resin fully proceeds when the adhesive film 20 is cured.

The content ratio of the thermosetting resin in the adhesive film 20 is preferably 5 to 60 mass %, and more preferably 10 to 50 mass %, from the viewpoint that the adhesive film 20 appropriately exhibits its function as a thermosetting adhesive. %.

The thermoplastic resin in the adhesive film 20 serves, for example, as an adhesive. When the adhesive film 20 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermoplastic resin include acrylic resin, natural rubber, butyl rubber, Isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin , 6-nylon or 6,6-nylon and other polyamide resins, phenoxy resins, polyethylene terephthalate or polybutylene terephthalate and other saturated polyester resins, polyamide imide Resin, and fluororesin. The film 20 may then contain one kind of thermoplastic resin, or may contain two or more thermoplastic resins. Acrylic resin is preferable as the thermoplastic resin in the adhesive film 20 because it has less ionic impurities and has high heat resistance.

When the film 20 contains an acrylic resin as the thermoplastic resin, the acrylic resin preferably contains the largest amount of monomer units derived from (meth)acrylate in terms of mass ratio.

Examples of the (meth)acrylate that is a monomer unit used to form the acrylic resin, that is, the (meth)acrylate that is a constituent monomer of the acrylic resin, include: (meth)acrylic acid alkyl ester, (Meth)acrylic acid cycloalkyl ester, and (meth)acrylic acid aryl ester. Examples of such a (meth)acrylate include the alkyl (meth)acrylate described above as a constituent monomer of the acrylic polymer used in the adhesive layer 12 . As the constituent monomer of the acrylic resin, one type of (meth)acrylate may be used, or two or more types of (meth)acrylate may be used.

The acrylic resin may contain one or two or more monomer units derived from other monomers that are copolymerizable with (meth)acrylate, for example, from the viewpoint of improving its cohesion and heat resistance. Examples of other copolymerizable monomers used to form the monomer units of the acrylic resin, that is, other copolymerizable monomers serving as constituent monomers of the acrylic resin, include carboxyl group-containing monomers, acid anhydride monomers, Hydroxyl group-containing monomers, nitrogen-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, and phosphate group-containing monomers. Specific examples of these monomers include those described above as monomers constituting the acrylic polymer used in the adhesive layer 12 .

When the adhesive film 20 has a composition containing a thermoplastic resin having a thermosetting functional group, for example, an acrylic resin containing a thermosetting functional group can be used as the thermoplastic resin. The acrylic resin used to form the thermosetting functional group-containing acrylic resin preferably contains the most monomer units derived from (meth)acrylate in terms of mass ratio. As such (meth)acrylate, for example, the same (meth)acrylate as described above as the constituent monomer of the acrylic polymer used for the adhesive layer 12 can be used. On the other hand, examples of the thermosetting functional group used to form the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group. Among these, glycidyl group and carboxyl group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be preferably used. Furthermore, depending on the type of the thermosetting functional group in the thermosetting functional group-containing acrylic resin, a hardening agent that can react with the thermosetting functional group is selected. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, the same phenolic resin as described above as the hardening agent for epoxy resin can be used as the hardener.

Regarding the adhesive film 20 before hardening for crystal bonding, in order to achieve a certain degree of cross-linking, for example, it is preferable to prepare in advance a resin composition compatible with the above-mentioned resin components contained in the adhesive film 20 in an adhesive film-forming resin composition. Polyfunctional compounds that react with the functional groups at the end of the molecular chain to generate bonds are used as cross-linking agents. Such a structure is preferable for the adhesive film 20 in terms of improving the adhesive properties at high temperatures and improving the heat resistance. Examples of such cross-linking agents include polyisocyanate compounds. Examples of the polyisocyanate compound include toluene diisocyanate, diphenylmethane diisocyanate, terephthalene diisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyols and diisocyanates. The content of the cross-linking agent in the resin composition for forming an adhesive film is from the viewpoint of improving the cohesion of the formed adhesive film 20 relative to 100 parts by mass of the resin having the above-mentioned functional group that can react with the cross-linking agent to form a bond. It is preferably 0.05 parts by mass or more, and from the viewpoint of improving the adhesive strength of the formed adhesive film 20, it is preferably 7 parts by mass or less. In addition, as the cross-linking agent in the adhesive film 20, other polyfunctional compounds such as epoxy resin and polyisocyanate compounds may be used in combination.

The membrane 20 may then also contain fillers. When blending fillers into the adhesive film 20 , it is preferable in terms of adjusting physical properties such as elastic modulus, yield point strength, and elongation at break of the adhesive film 20 . Examples of fillers include inorganic fillers and organic fillers. Fillers can have various shapes such as spheres, needles, and flakes. In addition, the adhesive film 20 may contain one type of filler or two or more types of filler.

Examples of the constituent materials of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate. Whiskers, boron nitride, crystalline silicon oxide, and amorphous silicon oxide. Examples of the constituent materials of the inorganic filler include elemental metals or alloys such as aluminum, gold, silver, copper, and nickel, amorphous carbon, graphite, and the like. When the film 20 contains an inorganic filler, the content of the inorganic filler is preferably 10% by mass or more, more preferably 20% by mass or more. Moreover, the content is preferably 50 mass% or less, more preferably 45 mass% or less.

Examples of the constituent materials of the organic filler include polymethylmethacrylate (PMMA), polyamideimide, polyamideimide, polyetheretherketone, polyetherimide, and polyesteramide. imine. When the film 20 contains an organic filler, the content of the organic filler is preferably 2 mass% or more, more preferably 5 mass% or more. Moreover, the content is preferably 20 mass% or less, more preferably 15 mass% or less.

When the film 20 contains a filler, the average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.05 to 1 μm. A configuration in which the filler has an average particle diameter of 0.005 μm or more is preferable in terms of realizing higher wettability or adhesiveness of the adhesive film 20 to an adherend such as a semiconductor wafer. A configuration in which the average particle diameter of the filler is 10 μm or less is preferable in order to obtain a sufficient filler addition effect for the adhesive film 20 and to ensure heat resistance. The average particle diameter of the filler can be determined, for example, using a photometric particle size distribution meter (trade name "LA-910", manufactured by Horiba Manufacturing Co., Ltd.).

The film 20 may then contain a thermosetting catalyst. The blending of the thermosetting catalyst into the adhesive film 20 is preferable in terms of allowing the curing reaction of the resin component to fully proceed or increasing the curing reaction speed when the adhesive film 20 is cured. Examples of such thermosetting catalysts include imidazole compounds, triphenylphosphine compounds, amine compounds, and boron trihalide compounds. Examples of imidazole compounds include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methyl Imidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methyl imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methyl 2,4-Diamino-6-[2'-Undecyl imidazolyl-(1')]-ethyl-symmetric tris , 2,4-Diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-symmetric trisulfate, 2,4-Diamino-6-[ 2'-methylimidazolyl-(1')]-ethyl-symmetric trisisocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl- 4-Methyl-5-hydroxymethylimidazole. Examples of the triphenylphosphine-based compound include triphenylphosphine, tris(butylphenyl)phosphine, tris(p-methylphenyl)phosphine, tris(nonylphenyl)phosphine, and diphenyltoluene. Phosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. The triphenylphosphine-based compounds include compounds having both a triphenylphosphine structure and a triphenylborane structure. Examples of such compounds include: tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetraphenylborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. . Examples of the amine compound include monoethanolamine trifluoroborate and dicyandiamide. Examples of boron trihalide compounds include boron trichloride. The film 20 may then contain one type of thermosetting catalyst, or may contain two or more types of thermosetting catalysts.

Then, the film 20 may also contain one or more other components if necessary. Examples of the other components include flame retardants, silane coupling agents, and ion trapping agents.

The thickness of the subsequent film 20 is preferably 3 μm or more, more preferably 7 μm or more. In addition, the thickness of the adhesive film 20 is preferably 150 μm or less, more preferably 140 μm or less.

The storage modulus (tensile storage modulus) of the film 20 at 25°C is preferably 1 to 5 GPa, more preferably 1.2 to 4 GPa. As mentioned above, the storage modulus (tensile storage modulus) of the film 20 at -5°C is preferably 3 to 5 GPa, more preferably 3.5 to 4.5 GPa. The storage modulus can be obtained, for example, by dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring device (trade name "RSAIII", manufactured by TA Instruments). In this measurement, the initial distance between the chucks for holding the specimen piece is set to 22.5 mm, the measurement mode is set to the tensile mode, the measurement environment is set to a nitrogen atmosphere, and the measurement temperature range is set to, for example, -40°C to 280°C. , the frequency was set to 10 Hz, the dynamic strain was set to 0.005%, and the heating rate was set to 10°C/min. The storage modulus of the subsequent film 20 can be adjusted, for example, by adjusting the amount of filler in the adhesive film 20 , adjusting the glass transition temperature of thermoplastic resins such as acrylic polymers, and adjusting the amount of normal-temperature solid thermosetting components. And proceed.

Regarding the dicing tape X with the adhesive film having the above configuration, the difference between the adhesive layer 12 and the adhesive film 20 in the second test piece after being exposed to ultraviolet irradiation of 300 mJ/cm ² at a temperature of 60°C The second peel adhesion force measured by the T-type peel test is relative to the T between the adhesive layer 12 and the adhesive film 20 in the first test piece after being exposed to ultraviolet irradiation of 300 mJ/cm ² at a temperature of 22°C. The first peel adhesion ratio measured by the type peel test is 0.8 to 2, preferably 0.9 to 1.8. The first and second test pieces are test pieces cut out from the die-cutting tape X with an adhesive film, respectively, and have the die-cutting tape 10 and the adhesive film 20 releasably and tightly adhered to the ultraviolet curable adhesive layer 12 thereof. In this embodiment, the ultraviolet irradiation received by the test piece refers to the ultraviolet irradiation of the adhesive layer 12 in the test piece through the base material 11 (irradiation from the side of the base material 11). Ultraviolet irradiation of 300 mJ/cm ² can be achieved, for example, by irradiating ultraviolet rays with an intensity of 150 mW/cm ² for 2 seconds. In addition, the above-mentioned T-type peeling test for measuring the first and second peeling adhesion was carried out under the conditions of 23° C. and a peeling speed of 300 mm/min. The T-type peel test can be implemented, for example, using a T-type peel tester (trade name "Autograph AG-20KNSD", manufactured by Shimadzu Corporation).

The above-mentioned first peeling adhesive force of the dicing tape X with the adhesive film is preferably 0.03 to 0.15 N/20 mm.

Peel adhesion force between the adhesive layer 12 and the adhesive film 20 in the dicing tape 3 Peeling adhesion) is preferably 1.5~4.5 N/20 mm.

The peeling adhesion force between the adhesive layer 12 and the adhesive film 20 in the dicing tape The fourth peeling adhesion force) is preferably 0.5 to 2 N/20 mm.

The adjustment of the peeling adhesive force (the first to the fourth peeling adhesive force) can be performed, for example, by adjusting the storage modulus described above.

The above-described dicing tape X with an adhesive film can be produced in the following manner, for example.

The dicing tape 10 with the adhesive film-attached dicing tape X can be produced by providing the adhesive layer 12 on the prepared base material 11 . For example, the resin substrate 11 can be filmed by a calendering machine, casting in an organic solvent, extrusion and inflation in a closed system, T-die extrusion, co-extrusion, or dry lamination. It is made by film-making methods such as the method. On the film or substrate 11 after film formation, specific surface treatment is performed as necessary. When forming the adhesive layer 12, for example, after preparing an adhesive composition for forming the adhesive layer, the composition is first coated on the base material 11 or a specific isolation film to form an adhesive composition layer. Examples of the coating method of the adhesive composition include roller coating, screen coating, and gravure coating. Next, the adhesive composition layer is dried by heating if necessary, and is subjected to a cross-linking reaction if necessary. The heating temperature is, for example, 80 to 150°C, and the heating time is, for example, 0.5 to 5 minutes. When the adhesive layer 12 is formed on the isolation film, the adhesive layer 12 with the isolation film is bonded to the base material 11, and then the isolation film is peeled off. Thereby, the above-mentioned dicing tape 10 having a laminated structure of the base material 11 and the adhesive layer 12 is produced.

When producing the adhesive film 20 of the dicing tape X with the adhesive film, first prepare an adhesive composition for forming the adhesive film 20, and then apply the composition on a specific isolation film to form an adhesive composition layer. . Examples of the release film include a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, and a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent. Surface-coated plastic film or paper, etc. Examples of the coating method of the adhesive composition include roll coating, screen coating, and gravure coating. Next, the adhesive composition layer is dried by heating if necessary, and is subjected to a crosslinking reaction if necessary. The heating temperature is, for example, 70 to 160°C, and the heating time is, for example, 1 to 5 minutes. In this way, the above-mentioned adhesive film 20 can be produced in a form with a separator film.

During the production of the dicing belt Crimp and fit. The bonding temperature is, for example, 30 to 50°C, preferably 35 to 45°C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm, preferably 1 to 10 kgf/cm. Next, the dicing tape 10 bonded to the adhesive film 20 is punched into a disc shape with a specific diameter such that the center of the dicing tape 10 coincides with the center of the adhesive film 20 .

In this way, the dicing tape X with the adhesive film can be produced. In the dicing belt X with the adhesive film, an isolation film (not shown) may be provided on the adhesive film 20 side so as to cover at least the adhesive film 20 . The isolation film is used to protect the device from exposing the adhesive film 20 or the adhesive layer 12, and is peeled off from the film when using the dicing tape X attached with the adhesive film.

3 to 9 illustrate an example of a semiconductor device manufacturing method using the dicing tape X with an adhesive film as described above.

In the semiconductor device manufacturing method of the present invention, first, as shown in FIG. 3(a) and FIG. 3(b) , a modified region 30a is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the side of the first surface Wa of the semiconductor wafer W, and the wiring structures required for the semiconductor elements (not shown) have been formed on the first surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T1, and then the wafer processing tape T1 is automatically attached to the wafer processing tape T1. The opposite side of the round processing tape T1 faces the semiconductor wafer W along the planned dividing line and irradiates the laser light focused on the inside of the wafer with a focused point to form modifications in the semiconductor wafer W through ablation based on multi-photon absorption. Area 30a. The modified region 30a is a weakened region for separating the semiconductor wafer W into semiconductor wafer units. A method of forming the modified region 30a on a planned division line by irradiating a semiconductor wafer with laser light is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. The laser irradiation element in this embodiment is as follows. Make appropriate adjustments within the scope of the conditions. <Laser light irradiation conditions> (A) Laser light Laser light source Semiconductor laser excitation Nd: YAG (Neodymium-doped Yttrium Aluminum Garnet, Neodymium-doped Yttrium Aluminum Garnet) Laser wavelength 1064 nm Laser spot cross-sectional area 3.14× 10 ^-8 cm ² Oscillation form Q-switch pulse repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00 Polarization characteristics Linearly polarized light (B) Condensing lens magnification 100 times or less NA 0.55 For laser light wavelength The transmittance is less than 100% (C) The transfer speed of the mounting table on which the semiconductor substrate is placed is less than 280 mm/second.

Next, while the semiconductor wafer W is held on the wafer processing tape T1, the semiconductor wafer W is thinned to a specific thickness by polishing from the second surface Wb, thereby as shown in FIG. 3(c) As shown, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor wafers 31 is formed (wafer thinning step). Grinding can be performed using a grinding machine equipped with a grinding stone.

Next, as shown in FIG. 4( a ), the semiconductor wafer 30A held by the wafer processing tape T1 is bonded to the adhesive film 20 side of the dicing tape X with the adhesive film. Thereafter, as shown in FIG. 4(b) , the wafer processing tape T1 is peeled off from the semiconductor wafer 30A.

Next, after attaching an annular frame 41 made of, for example, SUS to the adhesive layer 12 around the adhesive film 20 in the dicing tape The dicing belt X with the adhesive film of the circle 30A is fixed to the holder 42 of the expansion device via the annular frame 41 .

Next, as shown in FIG. 5(b) , the first expansion step (cold expansion step) is performed under specific low-temperature conditions, and the semiconductor wafer 30A is singulated into a plurality of semiconductor wafers 31, and the adhesive films are attached thereto. The adhesive film 20 of the dicing belt X is divided into small pieces of the adhesive film 21, and a semiconductor wafer 31 with an adhesive film is obtained. In this step, the hollow cylindrical lifting member 43 of the expansion device is in contact with the dicing belt 10 on the lower side in the figure of the dicing belt The dicing tape 10 of the dicing tape X with the adhesive film of 30A is stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed under the condition that a tensile stress of, for example, 15 to 32 MPa is generated in the dicing belt 10 . The temperature condition in the cold expansion step is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, more preferably -15°C. The expansion speed in the cold expansion step (the speed at which the lifting member 43 rises) is, for example, 1 to 400 mm/second. In addition, the expansion amount in the cold expansion step is, for example, 3 to 16 mm. The conditions related to the expansion in the cold expansion step are also the same in the cold expansion step described later.

By this cold expansion step, the adhesive film 20 of the dicing tape X with the adhesive film is divided into small pieces of the adhesive film 21 to obtain the semiconductor wafer 31 with the adhesive film. Specifically, in this step, cracks are formed in the fragile modified region 30a of the semiconductor wafer 30A and are singulated into semiconductor wafers 31 (the wafer and the adhesive film are separated by stealth cutting). At the same time, in this step, in the adhesive film 20 that is in close contact with the adhesive layer 12 of the expanded dicing tape 10, the deformation of each region of the semiconductor wafer 30A that is in close contact with each semiconductor chip 31 is suppressed. On the other hand, , the tensile stress generated by the dicing belt 10 acts on the portion opposite to the crack formation portion of the wafer without producing such a deformation-inhibiting effect. As a result, the portion of the adhesive film 20 that faces the crack formation portion between the semiconductor wafers 31 is divided. After this step, as shown in FIG. 5(c) , the lifting member 43 is lowered, and the expanded state of the dicing belt 10 is released.

Next, as shown in FIGS. 6(a) and 6(b) , the second expansion step (room temperature expansion step) is performed to expand the distance between the semiconductor wafers 31 with the adhesive film. In this step, the platform 44 of the expansion device is raised to expand the dicing belt 10 of the dicing belt X attached with the adhesive film. The platform 44 can cause negative pressure to act on the workpiece on the platform surface and vacuum adsorb the workpiece. The temperature condition in the second expansion step is, for example, 10°C or higher, preferably 15 to 30°C. The expansion speed (the speed at which the platform 44 rises) in the second expansion step is, for example, 0.1 to 10 mm/second. Furthermore, the expansion amount in the second expansion step is, for example, 3 to 16 mm. In this step, the dicing belt 10 is expanded by the rise of the platform 44 (thus, the distance between the semiconductor wafers 31 with the adhesive film is expanded), and then the platform 44 vacuum-adsorbs the dicing belt 10 . Then, while maintaining the adsorption state of the platform 44, as shown in FIG. 6(c), the platform 44 descends together with the workpiece. In this embodiment, in this state, the periphery of the semiconductor wafer 30A (the portion outside the semiconductor wafer 31 holding area) in the dicing belt X with the adhesive film is heated and shrunk (thermal shrinkage step). Thereafter, the vacuum adsorption state of the platform 44 is released. By going through the heat shrinkage step, a specific degree of tension is exerted on the wafer bonding area of the dicing tape X with the adhesive film that was stretched and temporarily relaxed in the first expansion step and the second expansion step. state, so that even after the above-mentioned vacuum adsorption state is released, the separation distance between the semiconductor wafers 31 remains fixed.

In the semiconductor device manufacturing method of the present invention, ultraviolet irradiation (ultraviolet irradiation step) for ultraviolet curing of the adhesive layer 12 to reduce the adhesive force is performed as shown in FIG. 7 . Specifically, for example, a high-pressure mercury lamp is used to irradiate ultraviolet rays R over the entire adhesive layer 12 from the side of the base material 11 of the dicing belt 10 . The cumulative light intensity of irradiation is, for example, 50 to 500 mJ/cm ² , preferably 100 to 300 mJ/cm ² . The area of the dicing tape Area D shown in Figure 1.

In the semiconductor device manufacturing method of the present invention, after the cleaning step of cleaning the semiconductor wafer 31 side of the dicing belt X with the adhesive film using a cleaning solution such as water if necessary, a pickup mechanism and an expansion mechanism are used. The crystal cutting and bonding device performs the picking step.

Specifically, first, as shown in FIG. 8(a) , the dicing belt X or the dicing belt 10 with the adhesive film on which the plurality of semiconductor wafers 31 are attached is fixed to the die bonding device through the annular frame 41 In the state of the holder 45 , the hollow cylindrical lifting member 46 provided in the device contacts the dicing belt 10 on the lower side of the dicing belt 10 in the figure and rises. Thereby, the dicing belt 10 is stretched in a two-dimensional direction including its radial direction and circumferential direction (expansion before picking up).

Next, as shown in FIG. 8( b ), the semiconductor wafer 31 with the adhesive film attached is picked up from the dicing belt 10 . For example, for the semiconductor wafer 31 with an adhesive film to be picked up, the ejection member 47 of the pickup mechanism is raised on the lower side of the dicing belt 10 in the figure to lift it up across the dicing belt 10 , and then the suction jig 48 is used. Perform adsorption and retention. When picking up, the lifting speed of the pushing pin member 47 is, for example, 1 to 100 mm/second, and the pushing amount of the pushing pin member 47 is, for example, 50 to 3000 μm.

Then, as shown in FIG. 9( a ), the picked-up semiconductor wafer 31 with the adhesive film 31 is temporarily fixed to a specific adherend 51 via the adhesive film 21 . Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board.

Next, as shown in FIG. 9( b ), the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the adherend 51 are electrically connected via the bonding wire 52 (wire bonding step) . The connection between the electrode pad of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 is achieved by ultrasonic welding with heating, and is performed without thermally hardening the adhesive film 21 . As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature in wire bonding is, for example, 80 to 250°C. Moreover, the heating time is several seconds to several minutes.

Next, as shown in FIG. 9(c) , the semiconductor wafer 31 is sealed with the sealing resin 53 for protecting the semiconductor wafer 31 and the bonding wire 52 on the adherend 51 (sealing step). In this step, thermal hardening of the film 21 will then proceed. In this step, the sealing resin 53 is formed, for example, by transfer molding using a mold. As a constituent material of the sealing resin 53, for example, epoxy resin can be used. In this step, the heating temperature used to form the sealing resin 53 is, for example, 165°C to 185°C, and the heating time is, for example, 60 seconds to several minutes. When hardening of the sealing resin 53 does not proceed sufficiently in this step (sealing step), a subsequent hardening step for completely hardening the sealing resin 53 is performed after this step. Even if the adhesive film 21 is not completely thermally cured in the sealing step, the adhesive film 21 can be completely thermally cured together with the sealing resin 53 in the post-curing step. In the post-hardening step, the heating temperature is, for example, 165 to 185°C, and the heating time is, for example, 0.5 to 8 hours.

In this way, a semiconductor device can be manufactured.

In the semiconductor device manufacturing method of the present invention, instead of the above-described structure of bonding the semiconductor wafer 30A to the dicing tape X with an adhesive film, the semiconductor wafer 30B produced in the following manner may be bonded to The cut crystal zone of the film is X.

When manufacturing the semiconductor wafer 30B, first, as shown in FIGS. 10(a) and 10(b) , the dividing grooves 30b are formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the side of the first surface Wa of the semiconductor wafer W, and the wiring structures required for the semiconductor elements (not shown) have been formed on the first surface Wa. In this step, after the wafer processing tape T2 having the adhesive surface T2a is bonded to the second surface Wb side of the semiconductor wafer W, the wafer cutting tape is used while the semiconductor wafer W is held on the wafer processing tape T1. The rotating blade of the device forms a dividing groove 30b of a specific depth on the first surface Wa side of the semiconductor wafer W. The dividing groove 30b is a gap for separating the semiconductor wafer W into semiconductor wafer units (the dividing groove 30b is schematically represented by a thick line in the figure).

Next, as shown in FIG. 10(c) , the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T2 is attached from the semiconductor wafer W. of peeling off.

Next, as shown in FIG. 10(d) , while the semiconductor wafer W is held on the wafer processing tape T3, the semiconductor wafer W is thinned to a specific thickness by polishing from the second surface Wb (wafer processing tape T3). circle thinning step). Through this wafer thinning step, in this embodiment, a semiconductor wafer 30B that can be singulated into a plurality of semiconductor wafers 31 is formed. Specifically, the semiconductor wafer 30B has a portion (connection portion) for connecting the wafer into a plurality of semiconductor wafers 31 on the second surface Wb side. The thickness of the connecting portion in the semiconductor wafer 30B, that is, the distance between the second surface Wb of the semiconductor wafer 30B and the second surface Wb side tip of the dividing groove 30b is, for example, 1 to 30 μm. When the semiconductor wafer 30B produced in this way is bonded to the dicing belt X with an adhesive film instead of the semiconductor wafer 30A, the above steps can also be performed with reference to FIGS. 5 to 9 .

11(a) and 11(b) specifically show the first expansion step (cold expansion step) performed after the semiconductor wafer 30B is bonded to the dicing tape X with the adhesive film. In this step, the hollow cylindrical lifting member 43 provided in the expansion device contacts the dicing belt 10 on the lower side in the figure of the dicing belt X with the adhesive film attached and rises, so that the semiconductor wafer 30B is bonded The dicing tape 10 with the adhesive film-attached dicing tape X is stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30B. Through this cold expansion step, the semiconductor wafer 30B is divided into thin parts that are prone to cracking and is singulated into semiconductor wafers 31 (the wafer and the adhesive film are cut in the form of a half-cut blade) . At the same time, in this step, in the adhesive film 20 that is in close contact with the adhesive layer 12 of the expanded dicing tape 10, the deformation of each area in close contact with each semiconductor wafer 31 is suppressed. On the other hand, in the contact with the semiconductor wafer In the parts where the dividing grooves 31 face each other, the tensile stress generated by the cutting belt 10 acts without such a deformation-inhibiting effect. As a result, the portion of the subsequent film 20 facing the dividing groove between the semiconductor wafers 31 is divided. The semiconductor wafer 31 with the adhesive film thus obtained is supplied to the mounting step in the semiconductor device manufacturing process after passing through the pickup step described above with reference to FIG. 8 .

In the semiconductor device manufacturing method of the present invention, the wafer thinning step shown in FIG. 12 may also be performed instead of the wafer thinning step described above with reference to FIG. 10(d). After the process described above with reference to FIG. 10(c), in the wafer thinning step shown in FIG. 12, while the semiconductor wafer W is held on the wafer processing tape T3, the second surface Wb is used to The wafer is thinned to a specific thickness by the grinding process to form a semiconductor wafer divided body 30C (a wafer in a blade-cut form) including a plurality of semiconductor wafers 31 and held on the wafer processing tape T3. In this step, the method of polishing the wafer until the dividing groove 30b itself is exposed on the second surface Wb side (first method) can also be used (second method), that is, from the second surface Wb side The wafer is ground until it almost reaches the dividing groove 30b, and then, due to the pressing force of the rotating grindstone on the wafer, a crack is generated between the dividing groove 30b and the second surface Wb to form a semiconductor wafer divided body 30C. The depth of the dividing groove 30b formed as described above with reference to FIGS. 10(a) and 10(b) from the first surface Wa is appropriately determined depending on the method used. In FIG. 12 , the dividing groove 30 b passing through the first method or the dividing groove 30 b passing the second method and the cracks connected thereto are schematically represented by thick solid lines. The semiconductor wafer divided body 30C produced in this way can be bonded to the dicing belt X with an adhesive film instead of the semiconductor wafer 30A or the semiconductor wafer 30B, and then the above-mentioned steps can be performed with reference to FIGS. 5 to 9 .

13(a) and 13(b) specifically show the first expansion step (cold expansion step) performed after the semiconductor wafer divided body 30C is bonded to the dicing tape X with the adhesive film. In this step, the hollow cylindrical lifting member 43 provided in the expansion device contacts the dicing belt 10 on the lower side in the figure of the dicing belt The dicing tape 10 of the dicing tape X with the adhesive film attached to the body 30C expands in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30C. By this cold expansion step, in the adhesive film 20 that is in close contact with the adhesive layer 12 of the expanded dicing tape 10, the deformation of each region in close contact with the semiconductor wafer 31 of the semiconductor wafer divided body 30C is suppressed, and the deformation is suppressed. On the other hand, in the portion facing the dividing groove 30 b between the semiconductor wafers 31 , the tensile stress generated by the dicing belt 10 acts without producing such a deformation-inhibiting effect. As a result, the portion of the adhesive film 20 facing the dividing groove 30 b between the semiconductor wafers 31 is divided (the wafer and the adhesive film are separated by blade cutting). The semiconductor wafer 31 with the adhesive film thus obtained is supplied to the mounting step in the semiconductor device manufacturing process after passing through the pickup step described above with reference to FIG. 8 .

Regarding ^the dicing tape The second peel adhesion measured by the T-type peel test at a peeling speed of 300 mm/min is compared to the adhesive in the first test piece after being exposed to ultraviolet irradiation of 300 mJ/ ^cm2 at a temperature of 22°C. The ratio of the first peel adhesion force between the layer 12 and the adhesive film 20 measured by the T-type peel test under the conditions of 23°C and a peeling speed of 300 mm/min is 0.8 to 2, preferably 0.9 to 1.8 . When the temperature dependence of the decrease in adhesive force due to ultraviolet irradiation in the ultraviolet curable adhesive layer 12 of the dicing belt 10 falls within this range, it is easy to realize the ultraviolet irradiation step that actually involves changes in ambient temperature. The balance between the adhesive force before ultraviolet irradiation (adhesive force before UV irradiation) and the adhesive force after ultraviolet irradiation (adhesive force after UV irradiation) can be easily achieved by balancing the adhesive film 20 on the dicing belt 10 with the wafer. The relatively high adhesion required in each of the expansion steps for circular slitting is relatively higher than that required in the above-mentioned pickup step for picking up the semiconductor wafer with the adhesive film from the dicing tape 10 Low adhesion. The present inventors obtained this knowledge. Specifically, this will be shown using Examples and Comparative Examples described below.

The above-mentioned ratio is 2 or less, preferably 1.8 or less, and is suitable for ensuring the adhesion of the adhesive layer 12 after ultraviolet irradiation in a normal temperature environment on the basis of ensuring a sufficiently strong adhesion before UV irradiation. Needless to say, the adhesive force achieved in this case, and the adhesive force achieved in the case of ultraviolet irradiation in a high temperature environment of about 60°C, becomes a weak enough post-UV irradiation adhesive force required in the pick-up step to be practical. By. In addition, the adhesive layer 12 that fully ensures the relatively high adhesion required in the expansion step is suitable for suppressing the semiconductor wafer 31 with the adhesive film on the dicing belt 10 between the expansion step and the ultraviolet irradiation step. The lift of self-cut crystal strip 10.

As described above, the dicing belt The lifting of the self-cut wafer 10 enables good pick-up in the pick-up step.

As mentioned above, the first peeling adhesive force of the dicing tape X with the adhesive film is preferably 0.03 to 0.15 N/20 mm. This structure is preferable in that the adhesive force of the adhesive layer 12 after UV irradiation incorporating the actual ambient temperature change in the ultraviolet irradiation step is within a practical range.

Peel adhesion force between the adhesive layer 12 and the adhesive film 20 in the dicing tape 3 Peeling adhesion) is preferably 1.5 to 4.5 N/20 mm as mentioned above. This structure is suitable for suppressing the lifting of the self-dicing tape 10 with respect to the semiconductor wafer 31 with the adhesive film on the dicing tape 10 between the expansion step for self-cutting and the ultraviolet irradiation step. In addition, this structure is preferable in that the adhesive layer 12 is practical as an adhesive force before UV irradiation, and the post-UV irradiation adhesive force taking into account the actual ambient temperature change in the ultraviolet irradiation step is at a level of Practical scope.

The peeling adhesion force between the adhesive layer 12 and the adhesive film 20 in the dicing tape The 4th peeling adhesive force) is preferably 0.5 to 2 N/20 mm as mentioned above. This configuration is suitable for the case where the dicing tape X with the adhesive film is used to perform an expansion step for cutting under low temperature conditions of, for example, 0° C. or lower, so that the adhesive film on the dicing tape 10 20 breaks well. In addition, this structure is preferable in that the adhesive layer 12 is practical as an adhesive force before UV irradiation, and the post-UV irradiation adhesive force taking into account the actual ambient temperature change in the ultraviolet irradiation step is at a level of Practical scope.

As mentioned above, the storage modulus (tensile storage modulus) of the adhesive film 20 in the dicing tape X with the adhesive film at 25° C. is preferably 1 to 5 GPa, more preferably 1.2 to 4 GPa. This structure is preferable in terms of ensuring the adhesion of the adhesive film 20 to the adhesive layer 12 at room temperature and a temperature range close to it.

As mentioned above, the storage modulus at -5°C of the adhesive film 20 in the dicing tape X with the adhesive film is preferably 3 to 5 GPa, more preferably 3.5 to 4.5 GPa. This structure is suitable for ensuring the disconnection property of the adhesive film 20 under low temperature conditions, for example, 0 degreeC or less.

The die-cut tape 10 in the die-cut tape X with the adhesive film is as described above for the die-cut tape test piece with a width of 10 mm. The initial distance between the chucks is 100 mm, -5°C, and the tensile speed is 300 mm/min. In the tensile test conducted under the conditions, the tensile stress present at a strain value of 20% is preferably 3 to 12 MPa, and more preferably 3.5 to 11.5 MPa. This structure is suitable for well-severing the adhesive film 20 on the dicing belt 10 in the expansion step for cutting under low-temperature conditions. [Example]

[Example 1] <Preparation of diced ribbon> In a reaction vessel equipped with a condenser tube, a nitrogen introduction tube, a thermometer, and a stirring device, 2-ethylhexyl acrylate (2EHA) 54 was placed in a nitrogen atmosphere at 61°C. 18 mol parts of 2-hydroxyethyl acrylate (HEA), 14 mol parts of acryloyl hydroxyethyl acrylate (ACMO), benzyl peroxide as polymerization initiator, and toluene as polymerization solvent The mixture was stirred for 6 hours (polymerization). In this mixture, the content of benzoyl peroxide was 0.2 parts by mass with respect to 100 parts by mass of the monomer components, and the content of toluene was 65 parts by mass with respect to 100 parts by mass of the monomer components. Through this polymerization reaction, a polymer solution containing the acrylic polymer _P1 is obtained. Next, 14 mole parts of 2-methacryloxyethyl isocyanate (MOI) was added to the solution containing acrylic polymer P ₁ , and then stirred at 50° C. in an air atmosphere for 48 hours (addition reaction). Thereby, a polymer solution containing the acrylic polymer _P2 having a methacrylic group in the side chain was obtained. Next, 0.8 parts by mass of a cross-linking agent (trade name "Coronate L", polyisocyanate compound, manufactured by Tosoh Co., Ltd.) was added to the polymer solution based on 100 parts by mass of the acrylic polymer _P2 , and 5 parts by mass of a photopolymerization initiator (trade name "Irgacure 369", manufactured by BASF) was mixed to obtain an adhesive composition. Next, the adhesive composition is applied on the silicone release-treated surface of the PET isolation film having the silicone-release-treated surface using an applicator to form an adhesive composition layer. Then, the composition layer was heated and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm on the PET isolation film. Next, use a laminating machine to laminate a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB0103", thickness 125 μm, Kurabo Industries Co., Ltd.) on the exposed surface of the adhesive layer at room temperature. manufactured by the company). In this way, the dicing tape of Example 1 including the base material and the adhesive layer was produced. Table 1 shows the relevant compositions of the adhesive layer of the dicing tape (DT) in Example 1 and the following Examples and Comparative Examples. In Table 1, regarding the monomers constituting the acrylic polymer (AP), the molar ratio between the monomers is described, and regarding the cross-linking agent, the mass ratio relative to 100 parts by mass of the acrylic polymer is described (monomer composition, The ratio of ACMO to 2EHA is also reported).

<Preparation of adhesive film> 80 parts by mass of acrylic resin A ₁ (trade name "Teisan Resin SG-P3", weight average molecular weight 850,000, glass transition temperature 12°C, manufactured by Nagase chemteX Co., Ltd.) and phenol resin (commercial product Named "MEH-7851SS", manufactured by Meiwa Kasei Co., Ltd.) 20 parts by mass, and 50 parts by mass of inorganic filler (trade name "SO-25", spherical silica, manufactured by Admatechs Co., Ltd.) were added to the methylethyl The mixture was mixed in ketone to obtain an adhesive composition with a solid content concentration of 20% by mass. Next, the adhesive composition was applied to the silicone release-treated surface of the PET isolation film (thickness: 38 μm) using an applicator to form an adhesive composition layer. Next, the composition layer was heated and dried at 130° C. for 2 minutes, and the adhesive film of Example 1 with a thickness of 10 μm was produced on the PET isolation film. Table 1 shows the composition (mass ratio) of the adhesive film in Example 1 and each of the Examples and Comparative Examples described below.

＜Preparation of dicing tape with adhesive film＞ The above-mentioned adhesive film of Example 1 with a PET isolation film was punched into a disc shape with a diameter of 330 mm. Secondly, after peeling off the PET isolation film from the above-mentioned dicing belt, a roller laminating machine is used to laminate the exposed adhesive layer of the dicing belt and the adhesive film with the PET isolation film. During this lamination, the lamination speed was set to 10 mm/min, the temperature condition was set to 23°C, and the pressure condition was set to 0.15 MPa. Next, the dicing tape bonded to the adhesive film is punched into a disc shape with a diameter of 370 mm so that the center of the dicing tape coincides with the center of the adhesive film. In this way, the dicing tape with an adhesive film of Example 1 having a laminated structure including the dicing tape and the adhesive film was produced.

[Example 2] <Preparation of crystal cutting ribbon> In a reaction vessel equipped with a condenser tube, a nitrogen introduction tube, a thermometer, and a stirring device, 2-ethylhexyl acrylate (2EHA) 30 was placed at 61° C. in a nitrogen atmosphere. 27 mole parts of 4-hydroxybutyl acrylate (4HBA), 23 mole parts of acryloyl hydroxybutyl acrylate (ACMO), benzyl peroxide as polymerization initiator, and toluene as polymerization solvent The mixture was stirred for 6 hours (polymerization). In this mixture, the content of benzoyl peroxide was 0.2 parts by mass with respect to 100 parts by mass of the monomer components, and the content of toluene was 65 parts by mass with respect to 100 parts by mass of the monomer components. Through this polymerization reaction, a polymer solution containing acrylic polymer _P3 is obtained. Next, 20 mole parts of 2-methacryloxyethyl isocyanate (MOI) was added to the solution containing acrylic polymer _P3 , and then stirred at 50° C. in an air atmosphere for 48 hours (addition reaction). Thereby, a polymer solution containing the acrylic polymer _P4 having a methacrylic group in the side chain was obtained. Next, 2.5 parts by mass of a cross-linking agent (trade name "Coronate L", polyisocyanate compound, manufactured by Tosoh Co., Ltd.) was added to the polymer solution based on 100 parts by mass of the acrylic polymer _P4 . 5 parts by mass of a photopolymerization initiator (trade name "Irgacure 369", manufactured by BASF) was mixed to obtain an adhesive composition. Next, the adhesive composition is applied on the silicone release-treated surface of the PET isolation film having the silicone-release-treated surface using an applicator to form an adhesive composition layer. Then, the composition layer was heated and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm on the PET isolation film. Next, use a laminating machine to laminate a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name "NED125", thickness 125 μm, Gunze Co., Ltd. on the exposed surface of the adhesive layer at room temperature manufacturing). In this way, the dicing tape of Example 2 including the base material and the adhesive layer was produced.

<Preparation of adhesive film> Mix 90 parts by mass of acrylic resin A ₁ (trade name "Teisan Resin SG-P3", manufactured by Nagase chemteX Co., Ltd.) and phenol resin (trade name "MEH-7851SS", Meiwa Chemical Co., Ltd. ) and 50 parts by mass of an inorganic filler (trade name "SO-25", manufactured by Admatechs Co., Ltd.) were added to methyl ethyl ketone and mixed to obtain an adhesive with a solid content concentration of 20% by mass. composition. Next, the adhesive composition was applied to the silicone release-treated surface of the PET isolation film (thickness: 38 μm) using an applicator to form an adhesive composition layer. Next, the composition layer was heated and dried at 130° C. for 2 minutes, and the adhesive film of Example 2 with a thickness of 10 μm was produced on the PET isolation film.

＜Preparation of dicing tape with adhesive film＞ The dicing tape and adhesive film of Example 2 were used instead of the dicing tape and adhesive film of Example 1. The dicing tape and adhesive film of Example 2 were manufactured in the same manner as the dicing tape with adhesive film of Example 1. There is a cutting belt that adheres to the film.

[Example 3] When forming the adhesive layer of the cutting tape, set the amount of 2EHA to 36 mole parts instead of 54 mole parts, set the amount of HEA to 20 mole parts instead of 18 mole parts, and use 10 mole parts of 4HBA. The amount of ACMO is set to 9 mole parts instead of 14 mole parts, the amount of MOI is set to 25 mole parts instead of 14 mole parts, and the amount of cross-linking agent is set to 3 parts by mass instead of 0.8 parts by mass, except Otherwise, the dicing tape with an adhesive film of Example 3 was produced in the same manner as the dicing tape with an adhesive film of Example 1.

[Comparative example 1] When forming the adhesive layer of the cutting tape, set the amount of 2EHA to 76 mole parts instead of 54 mole parts, set the amount of HEA to 14 mole parts instead of 18 mole parts, do not use ACMO, and change the amount of MOI Set it to 10 mole parts instead of 14 mole parts, set the cross-linking agent amount to 0.4 parts by mass instead of 0.8 parts by mass, and use a base material made of polyolefin (trade name "INFUSE 9807", manufactured by Kurabo Industries Co., Ltd. ) in place of the EVA base material, except that the die cutting tape of Comparative Example 1 was produced in the same manner as the die cutting tape of Example 1.

<Preparation of adhesive film> Mix 90 parts by mass of acrylic resin A ₂ (trade name "Teisan Resin SG-708-6", manufactured by Nagase chemteX Co., Ltd.) and phenol resin (trade name "MEH-7851SS", Meiwa Kasei Co., Ltd. Co., Ltd.) and 50 parts by mass of inorganic filler (trade name "SO-25", manufactured by Admatechs Co., Ltd.) were added to methyl ethyl ketone and mixed to obtain a solid content concentration of 20% by mass. Adhesive composition. Next, the adhesive composition was applied to the silicone release-treated surface of the PET isolation film (thickness: 38 μm) using an applicator to form an adhesive composition layer. Next, the composition layer was heated and dried at 130° C. for 2 minutes, and the adhesive film of Comparative Example 1 with a thickness of 10 μm was produced on the PET isolation film.

＜Preparation of dicing tape with adhesive film＞ The dicing tape and adhesive film of Comparative Example 1 were used in place of the dicing tape and adhesive film of Example 1. The dicing tape and adhesive film of Comparative Example 1 were produced in the same manner as the dicing tape with adhesive film of Example 1. There is a cutting belt that adheres to the film.

[Comparative example 2] When forming the adhesive layer of the cutting tape, set the amount of 2EHA to 65 mole parts instead of 54 mole parts, set the amount of HEA to 18 mole parts instead of 18 mole parts, and set the amount of ACMO to 8 mole parts. parts by mol instead of 14 parts by mol, set the amount of MOI to 8 parts by mol instead of 14 parts by mol, set the amount of cross-linking agent to 5 parts by mass instead of 0.8 parts by mass, and use a base material made of polyolefin (commercial product (named "INFUSE 9530", manufactured by Kurabo Industries Co., Ltd.) instead of the EVA base material, the dicing tape with adhesive film of Comparative Example 2 was produced in the same manner as the dicing tape with adhesive film of Example 1. Cut crystal strip.

<Adhesion after UV irradiation (22°C)> Regarding the die-cutting tapes with adhesive films of Examples 1 to 3 and Comparative Examples 1 and 2, the adhesive layer and This is followed by peeling adhesion between the films. First, use a high-pressure mercury lamp to irradiate 300 mJ/cm ² (irradiation intensity 150 mW/ cm ² , 2 seconds) of ultraviolet light. Next, in the dicing tape with the adhesive film, peel off the PET isolation film on the adhesive film side, and then attach a backing tape (trade name "BT-315", manufactured by Nitto Denko Co., Ltd.) to the adhesive film side. Then, a test piece with a width of 50 mm and a length of 120 mm was cut out from the die-cutting tape with the adhesive film on the backing tape. Then, a T-type peel test was performed on this test piece using a T-type peel tester (trade name "Autograph AG-20KNSD", manufactured by Shimadzu Corporation) to measure the peel adhesion F ₁ (N/20 mm). In this measurement, the temperature condition was set to 23°C and the peeling speed was set to 300 mm/min. The results are shown in Table 1.

<Adhesion after UV irradiation (60°C)> Regarding the die-cutting tapes with adhesive films of Examples 1 to 3 and Comparative Examples 1 and 2, the adhesive layer and This is followed by peeling adhesion between the films. First, place the dicing tape with the adhesive film on a hot plate whose surface temperature is adjusted to 60°C so that its adhesive film side (with a PET isolation film) is in contact with the hot plate. Let it stand for 10 seconds. , use a high-pressure mercury lamp to irradiate 300 mJ/cm ² (irradiation intensity 150 mW/cm 2) from the side of the dicing tape base material in the dicing tape with an adhesive film at a temperature of 60°C ² , 2 seconds) of ultraviolet light. Next, in the dicing tape with the adhesive film, peel off the PET isolation film on the adhesive film side, and then attach a backing tape (trade name "BT-315", manufactured by Nitto Denko Co., Ltd.) to the adhesive film side. Next, a test piece with a width of 50 mm and a length of 120 mm was cut out from the die-cutting tape with the adhesive film on the backing tape. Then, a T-type peel test was performed on this test piece using a T-type peel tester (trade name "Autograph AG-20KNSD", manufactured by Shimadzu Corporation) to measure the peel adhesion F ₂ (N/20 mm). In this measurement, the temperature condition was set to 23°C and the peeling speed was set to 300 mm/min. The results are shown in Table 1. Furthermore, the ratio of the peeling adhesive force F ₂ to the peeling adhesive force F ₁ is also described.

<Adhesion before UV irradiation> Regarding the dicing tapes with adhesive films of Examples 1 to 3 and Comparative Examples 1 and 2, the peeling adhesion between the adhesive layer and the adhesive film of the dicing tape before ultraviolet irradiation was investigated. force. First, in a dicing tape with an adhesive film, the PET isolation film on the adhesive film side is peeled off, and then a backing tape (trade name "BT-315", manufactured by Nitto Denko Co., Ltd.) is attached to the adhesive film side. Next, a test piece with a width of 50 mm and a length of 120 mm was cut out from the die-cutting tape with the adhesive film on the backing tape. Then, a T-type peel test was performed on this test piece using a T-type peel tester (trade name "Autograph AG-20KNSD", manufactured by Shimadzu Corporation) to measure the peel adhesion F ₃ (N/20 mm). In this measurement, the temperature condition was set to 23°C and the peeling speed was set to 300 mm/min. The results are shown in Table 1.

In addition, regarding the diced tapes with adhesive films in Examples 1 to 3 and Comparative Examples 1 and 2, the temperature conditions in the T-type peeling test were set to -5°C instead of 23°C. Determination of adhesion force F ₃ The peeling adhesion force F ₄ between the adhesive layer of the cutting tape and the bonding film before being exposed to ultraviolet irradiation was measured in the same way. The results are shown in Table 1.

[Tensile stress of cutting strip] The tensile stress of each of the die-cut tapes with adhesive films of Examples 1 to 3 and Comparative Examples 1 and 2 was investigated. First, cut out a test piece with a width of 10 mm and a length of 1 mm from the wafer. Next, a tensile test was performed on the test piece using a tensile testing machine (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), and the tensile stress generated at a strain value of 20% was measured. In this tensile test, the initial distance between the chucks was 100 mm, the temperature condition was -5°C, and the tensile speed was 300 mm/min. The average of the measured values of the test pieces derived from the same cut strip is defined as the tensile stress at -5°C of the cut strip. This value is shown in Table 1.

[Storage Modulus of Adhesive Films] Regarding the adhesive films of the dicing tapes with adhesive films in Examples 1 to 3 and Comparative Examples 1 and 2, based on the use of a dynamic viscoelasticity measuring device (trade name "RSAIII", TA Instruments (manufactured by the company), the storage modulus at 25°C (tensile storage modulus) and the storage modulus at -5°C (tensile storage modulus) were determined. Regarding the sample pieces used for measurement, in each of the Examples and Comparative Examples, a plurality of sheets and films were laminated to form a laminated body having a thickness of 200 μm, and then the laminated body was cut into a size of 10 mm wide by 40 mm long. Go out and prepare. In addition, in this measurement, the initial distance between the chucks for holding the sample piece was set to 22.5 mm, the measurement mode was set to the tensile mode, the measurement environment was set to a nitrogen atmosphere, and the measurement temperature range was set to -40°C to 280°C, the frequency was set to 10 Hz, the dynamic strain was set to 0.005%, and the heating rate was set to 10°C/min. The storage modulus E ₁ (GPa) at 25° C. and the storage modulus E ₂ (GPa) at -5° C. of each adhesive film are shown in Table 1.

[Fitting steps and expansion steps] Using the dicing tapes with adhesive films of Examples 1 to 3 and Comparative Examples 1 and 2, the following lamination steps, the first expansion step for cutting (cold expansion step), and the following steps for isolation were performed. Start the second expansion step (room temperature expansion step).

In the bonding step, the semiconductor wafer held on the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) is bonded to the adhesive layer of the dicing tape with the adhesive film. Thereafter, the wafer processing tape is peeled off from the semiconductor wafer. Semiconductor wafers are cut and thinned by half-cutting, with dividing grooves (width 25 μm, forming a grid shape of 10 mm × 10 mm per area) for singulation and having a thickness of 50 μm. During lamination, use a laminating machine, set the laminating speed to 10 mm/second, set the temperature condition to 60°C, and set the pressure condition to 0.15 MPa. Furthermore, in this step, the side of the semiconductor wafer opposite to the surface where the dividing grooves are formed is bonded to the adhesive layer in the dicing tape with the adhesive film attached thereto.

The cold expansion step is performed using a separation device (trade name "Die Separator DDS2300", manufactured by DISCO Co., Ltd.) using its cold expansion unit. Specifically, after the above-mentioned dicing tape with an adhesive film or its adhesive layer attached to the semiconductor wafer is attached to the annular frame, the dicing tape with an adhesive film is placed in the device, and the device is used. The cold expansion unit expands the dicing tape with the adhesive film attached to the semiconductor wafer. In this cold expansion step, the temperature is -5°C, the expansion speed is 200 mm/second, and the expansion amount is 12 mm. Through this step, the semiconductor wafer is singulated on the dicing belt to obtain a plurality of semiconductor wafers with adhesive layers.

The normal temperature expansion step is performed using a separation device (trade name "Die Separator DDS2300", manufactured by DISCO Co., Ltd.) using its normal temperature expansion unit. Specifically, the dicing tape with the adhesive film attached to the semiconductor wafer that has undergone the above-mentioned cold expansion step is expanded using the normal temperature expansion unit of the above-mentioned device. In this normal temperature expansion step, the temperature is 23°C, the expansion speed is 1 mm/second, and the expansion amount is 10 mm. Then, a heat shrinkage treatment (thermal shrinkage) is performed on the peripheral portion of the dicing tape that is outside the workpiece adhesion area. In this process, the temperature of the hot air for heating is 250°C and the air volume is 40 L/min. The heating distance (the distance from the hot air outlet to the heating object) is 20 mm. Keep the load of the cutting belt with the workpiece The rotation speed of the table is 3°/second.

<Evaluation of Breakability> After the above process, the adhesive layer of each dicing tape with an adhesive film attached to the workpiece was exposed to ultraviolet light at 300 mJ/cm ² through the dicing tape at a temperature of 20°C. irradiation. Thereafter, a die bonding device (trade name "Die Bonder SPA-300", manufactured by Shinkawa Co., Ltd.) was used to try to pick up the semiconductor wafer with the adhesive film from the die tape (picking up step). In this step, the number of wafers to be attempted to be picked is set to 100, and the pick-up height is set to 350 μm. The proper pickup of a semiconductor wafer with an adhesive film is an index of the separability of the adhesive film in the dicing tape with the adhesive film and the workpiece attached thereto. Regarding the separability of the adhesive film If the number of wafers that can be picked up as semiconductor wafers with an adhesive film in this step out of 100 semiconductor wafers that are tried to be picked up is 99 or more, it will be evaluated as "good" and it will be considered as a semiconductor wafer with an adhesive film. When the number of picked wafers is 98 or less, the evaluation is "defective". The results are shown in Table 1.

＜Evaluation of rise suppression＞ After the above process (the process until heat shrinkage), each dicing tape with the adhesive film attached to the workpiece was left to stand at room temperature for 3 hours. After that, the semiconductor wafer with the adhesive film was observed using a microscope. The bonding film lifts from the cutting strip. Then, the ratio of the area of the lift occurring between the dicing belt and the adhesive film to the total area of the area where the semiconductor wafer group with the adhesive film should be formed on the dicing belt after the above two expansion steps is determined. Regarding the difficulty in causing rise after the expansion step (suppression of rise), the case where the area where the rise occurred was less than 30% was evaluated as "good", and the case where the area was 30% or more was evaluated as "poor". The results are shown in Table 1.

<Evaluation of pick-up properties after UV irradiation at normal temperature and high temperature> After the above process (process until heat shrinkage), the adhesive layer of each dicing tape with the adhesive film attached to the workpiece was separated at a temperature of 25°C. The cutting belt was irradiated with ultraviolet light at 300 mJ/cm ² . Thereafter, a die bonding device (trade name "Die Bonder SPA-300", manufactured by Shinkawa Co., Ltd.) was used to try to pick up the semiconductor wafer with the adhesive film from the die tape (the first pick-up step). In this step, set the number of wafers to be picked up to 50 and the pick-up height to 350 μm.

In addition, the dicing tapes (with the workpiece) with the adhesive film of each of Examples 1 to 3 and Comparative Examples 1 and 2 of Examples 1 to 3 and Comparative Examples 1 and 2 were separately prepared and subjected to the above-mentioned process (process up to heat shrinkage), and the workpiece or semiconductor wafer was used. Place it on a heating plate with a set temperature of 60°C with its side in contact with the surface of the heating plate. In this heated state of 60°C, the adhesive layer of the dicing tape with the adhesive film is irradiated with ultraviolet light at 300 mJ/cm ² through the dicing tape. Thereafter, a die bonding device (trade name "Die Bonder SPA-300", manufactured by Shinkawa Co., Ltd.) was used to try to pick up the semiconductor wafer with the adhesive film from the die tape (the second pick-up step). In this step, set the number of wafers to be picked up to 50 and the pick-up height to 350 μm.

Regarding the pick-up properties of the semiconductor wafer with the adhesive film from the dicing tape after ultraviolet irradiation of the adhesive layer of the dicing tape, in each of the above-mentioned first and second pickup steps, it will be possible to pick up 50 objects A case where all semiconductor wafers with an adhesive film are picked up is evaluated as "good", and a case where one semiconductor wafer with an adhesive film that cannot be picked up among the total number of 100 pickup objects in the two pickup steps is evaluated as "bad". The results are shown in Table 1. In the dicing tapes with adhesive films of Comparative Examples 1 and 2, specifically, the number of semiconductor wafers with adhesive films that cannot be picked up in the second pickup step is 1 or more.

[Table 1] Example 1 Example 2 Example 3 Comparative example 1 Comparative example 2 DT adhesive layer The single composition of AP 2EHA 54 30 36 76 65 HEA 18 - 20 14 19 HBA - 27 10 - - ACMO 14 twenty three 9 - 8 MOI 14 20 25 10 8 (ACMO/2EHA) 0.259 0.767 0.250 0 0.123 Cross-linking agent (Coronate L) 0.8 2.5 3 0.4 5 Then film Acrylic resin A ₁ 80 90 80 - 80 Acrylic resin A ₂ - - - 90 - Phenolic resin 20 10 20 10 20 Inorganic filler 50 50 50 50 50 Peel adhesion F ₁ (N/20 mm) 0.143 0.067 0.035 0.025 0.16 Peel adhesion F ₂ (N/20 mm) 0.258 0.082 0.031 0.162 0.33 F ₂ /F ₁ 1.8 1.2 0.9 6.5 2.1 Peel adhesion F ₃ (N/20 mm) 1.7 3.5 4.4 1.4 1.2 Peel adhesion F ₄ (N/20 mm) 0.6 1.5 1.9 0.4 0.45 Tensile stress of DT (MPa) 4.0 7.0 11.0 2.5 2.0 Then the storage modulus of the film E ₁ (GPa) 1.5 3.1 1.5 0.4 0.4 Then the storage modulus of the film E ₂ (GPa) 3.5 4 3.5 2.7 2.7 Disjunction in expansion steps good good good bad bad Suppression of rise after expansion step good good good bad bad Pick-up properties after normal temperature and high temperature UV irradiation good good good bad bad

10: Cutting strip 11:Substrate 12: Adhesive layer 12a: Adhesive surface 20,21:Adhere to the film 30C: Semiconductor wafer split body 30a: Modified area 30b: Split slot 31:Semiconductor wafer 41: Ring frame 42:Retainer 43: Jacking up components 44:Platform 45:Retainer 46: Jacking up components 47: ejector pin component 48: Adsorption fixture 51: The connected body 52:Joining wire 53:Sealing resin D: The area within the bonding area of the adhesive film in the adhesive layer except for its peripheral edge R:Ultraviolet irradiation T1, T2, T3: Tape for wafer processing T1a, T2a, T3a: adhesive surface W,30A,30B:semiconductor wafer Wa: Side 1 Wb: Side 2 X: Cutting tape with adhesive film

FIG. 1 is a schematic cross-sectional view of a dicing tape with an adhesive film according to an embodiment of the present invention. FIG. 2 is a top view of the dicing tape with an adhesive film shown in FIG. 1 . FIGS. 3(a) to 3(c) show some steps of an example of a semiconductor device manufacturing method using the dicing tape with an adhesive film shown in FIG. 1 . Figures 4(a) and (b) show steps following the steps shown in Figure 3. Figures 5(a) to (c) show steps following the steps shown in Figure 4. Figures 6(a) to (c) show steps following the steps shown in Figure 5. Figure 7 shows steps subsequent to those shown in Figure 6. FIGS. 8(a) and (b) show steps following the steps shown in FIG. 7 . Figures 9(a) to (c) show steps following the steps shown in Figure 8. FIGS. 10(a) to 10(d) show some steps of another example of a semiconductor device manufacturing method using the dicing tape with an adhesive film shown in FIG. 1 . Figures 11(a) and (b) show steps following the steps shown in Figure 10. FIG. 12 shows some steps of another example of a semiconductor device manufacturing method using the dicing tape with an adhesive film shown in FIG. 1 . Figures 13(a) and (b) show steps following the steps shown in Figure 12.

10: Cutting strip

11:Substrate

12: Adhesive layer

12a: Adhesive surface

20:Add film

D: The area within the bonding area of the adhesive film in the adhesive layer except for its peripheral edge

X: Cutting tape with adhesive film

Claims (7)

A dicing tape with an adhesive film, which is provided with: a dicing tape having a laminated structure including a base material and an ultraviolet curable adhesive layer; and an adhesive film that is releasably and closely adhered to the above-mentioned dicing tape. Adhesive layer; and between the above-mentioned adhesive layer and the above-mentioned adhesive film in the second test piece after being exposed to ultraviolet irradiation of 300 mJ/ ^cm2 at a temperature of 60°C, under the conditions of 23°C and a peeling speed of 300 mm/min. The second peel adhesion force measured by the T-type peel test is relative to the relationship between the above-mentioned adhesive layer and the above-mentioned adhesive film in the first test piece after being exposed to ultraviolet irradiation of 300 mJ/ ^cm2 at a temperature of 22°C. The first peel adhesion ratio measured by the T-type peel test under the conditions of 23°C and a peeling speed of 300 mm/min is 0.8 to 2. For example, the dicing tape with an adhesive film according to claim 1, wherein the first peeling adhesion force is 0.03~0.15 N/20 mm. As claimed in claim 1 or 2, the wafer cutting tape with an adhesive film, wherein the bond between the adhesive layer and the adhesive film is measured by a T-type peel test under the conditions of 23°C and a peeling speed of 300 mm/min. The peeling adhesion force is 1.5~4.5 N/20 mm. Such as the wafer cutting tape with an adhesive film according to claim 1 or 2, wherein the distance between the adhesive layer and the adhesive film is measured by a T-type peeling test under the conditions of -5°C and a peeling speed of 300 mm/min. The peeling adhesion force is 0.5~2 N/20 mm. For example, the dicing tape with an adhesive film according to claim 1 or 2, wherein the storage modulus of the adhesive film at 25°C is 1 to 5 GPa. For example, the dicing tape with an adhesive film according to claim 1 or 2, wherein the storage modulus of the adhesive film at -5°C is 3 to 5 GPa. For example, if the dicing tape with an adhesive film is required in item 1 or 2, the conditions for the dicing tape test piece with a width of 10 mm are 100 mm between the initial chucks, -5°C, and a tensile speed of 300 mm/min. In the tensile test conducted under 20% strain value, the tensile stress was 3 to 12 MPa.