TW202033710A - Dicing die bond film - Google Patents

Abstract

The invention provides a diced die-bonding film that can achieve good pickup of a semiconductor chip with an adhesive layer after being cut even after a long period of time after manufacturing. The dicing die-bonding film includes: a dicing tape having a laminated structure including a base material and an adhesive layer; and, an adhesive layer detachably from the adhesive layer in the dicing tapeIn close contact, the pressure-sensitive adhesive layer includes a polymer having a structural part derived from a cross-linking agent including a radically polymerizable functional group and a firstfunctional group other than the radically polymerizable functional group, and maintains the radically polymerizable The state of radical polymerization of the functional group; and, a radical polymerization initiator having a second functional group capable of reacting with the first functional group.

Description

Diced wafer

The present invention relates to a diced chip mucous film. In more detail, the present invention relates to a dicing die film that can be used in the manufacturing process of semiconductor devices.

In the manufacturing process of semiconductor devices, there are situations in which a dicing die is used in the process of obtaining a semiconductor wafer including an adhesive film having a size equivalent to that of a die-bonding wafer, that is, a semiconductor wafer with an adhesive layer for die-bonding. Crystal film. The dicing die attach film has a size corresponding to the semiconductor wafer to be processed, for example, it has a die dicing tape including a substrate and an adhesive layer, and a die attach film that is peelably attached to the adhesive layer side (adhesive Floor).

As one of the methods for obtaining a semiconductor wafer with an adhesive layer using a dicing die bond film, there is known a method of cutting the die bond film through a step for extending the die dicing tape in the die bond film. In this method, first, the semiconductor wafer is attached to the die-cut die-bonding film. The semiconductor wafer is, for example, processed in such a way that it can be cut together with the die-attach film and then singulated into a plurality of semiconductor wafers.

Then, in order to cut the die-cutting film on the die-cutting tape, the die-cutting die-cutting tape of the die-cutting die film is stretched in a two-dimensional direction including the diameter direction and the circumferential direction of the semiconductor wafer using an extension device. In this extension step, the semiconductor wafer on the die-bonding film is also cut at the location corresponding to the cut-off part in the die-bonding film, so that the semiconductor wafer is monolithically placed on the die-cut die-bonding film or die-cutting tape Into a plurality of semiconductor wafers.

Then, in order to expand the distance between the plurality of semiconductor wafers with adhesive films on the dicing tape after the dicing, the extension step is performed again. Then, for example, after a cleaning step, the pin member of the pick-up mechanism lifts each semiconductor wafer together with a die attach film corresponding to the size of the wafer that is closely attached to the semiconductor wafer from the lower side of the dicing tape to cut itself Pick up on crystal tape. In this way, a semiconductor chip with an adhesive crystal film or adhesive layer is obtained. The semiconductor chip of the adhesive layer is adhered to an attached body such as a mounting substrate through the adhesive layer and by die bonding.

The technology related to the diced die attach film used in the above manner is described in Patent Documents 1 to 3 below, for example. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2007-2173 [Patent Document 2] Japanese Patent Laid-Open No. 2010-177401 [Patent Document 3] Japanese Patent Laid-Open No. 2016-115804

[The problem to be solved by the invention]

In the semiconductor manufacturing process, there is a situation that when using the diced die-cutting film that has been stored for a long time after manufacturing, during the above-mentioned pickup, even when the adhesive layer in the die-cutting tape is irradiated with radiation, the adhesive layer After hardening and reducing the adhesion between the adhesive layer and the adhesive layer, it is difficult to pick up the semiconductor wafer of the adhesive layer well.

The present invention was made in view of the above-mentioned problems, and its object is to provide a diced die attach film that can achieve good pickup of a semiconductor wafer with an adhesive layer after being cut even after a long time has passed after manufacturing. In addition, another object of the present invention is to provide a dicing die attach film that can achieve good picking up of the semiconductor wafer of the adhesive layer after severing. [Technical means to solve the problem]

The inventors of the present invention made efforts to achieve the above-mentioned object and found that if the following die-cut die-attach film is used, even after a long period of time after manufacturing, it is possible to achieve good pick-up of the semiconductor wafer of the adhesive layer after being cut. The dicing die attach film includes: a dicing tape having a laminated structure including a substrate and an adhesive layer; and an adhesive layer that is peelably adhered to the adhesive layer in the dicing tape; and the adhesive The agent layer contains: a polymer that contains a first functional group derived from the radical polymerizable functional group and a first functional group other than the radical polymerizable functional group while maintaining the radical polymerizability of the radical polymerizable functional group The structural part of the crosslinking agent; and a radical polymerization initiator having a second functional group that can react with the above-mentioned first functional group. The present invention was completed based on these findings.

That is, the present invention provides a dicing die-cutting film (there is a case called "the dicing die-cutting film of the first invention"), which includes: a die-cutting tape having a laminated structure including a substrate and an adhesive layer And an adhesive layer, which is releasably attached to the adhesive layer in the dicing tape; and the adhesive layer includes: a polymer, which maintains the radical polymerizability of the radical polymerizable functional group Contains a structural part derived from a crosslinking agent having the above-mentioned radically polymerizable functional group and a first functional group other than the above-mentioned radically polymerizable functional group; and a radical polymerization initiator having a structure capable of interacting with the above-mentioned first functional group The second functional group of the group reaction. The diced die attach film of this structure can be used to obtain a semiconductor wafer with an adhesive layer in the manufacturing process of a semiconductor device.

As described above, the adhesive layer of the chip dicing tape in the chip dicing film of the first present invention contains a polymer that contains a polymer derived from having a free radical polymerizable functional group while maintaining the radical polymerizability of the free radical polymerizable functional group. The structure part of the crosslinking agent of the said radically polymerizable functional group and the 1st functional group other than the said radically polymerizable functional group. Such a polymer can be obtained by polymerizing (copolymerizing) a raw material monomer containing a monomer component capable of reacting with the first functional group, and then making the crosslinking agent (that is, having a radical polymerizable functional group and The crosslinking agent of the first functional group) is obtained by performing condensation reaction or addition reaction with the above-mentioned polymer while maintaining the radical polymerizability of the radical polymerizable functional group. Since the adhesive layer containing the polymer obtained in this way maintains radical polymerizability, it is polymerized and hardened by radiation irradiation, thereby reducing the adhesive force. Therefore, for example, when using a dicing die sticking film in the dicing step, the adhesive layer can be used to show a relatively high adhesion state to suppress and prevent the adhesive layer from floating from the adhesive layer. On the other hand, In the subsequent picking step, the picking can be easily performed by reducing the adhesive force of the adhesive layer.

Furthermore, as described above, the adhesive layer of the chip dicing tape in the chip dicing film of the first invention includes a radical polymerization initiator having a second functional group that can react with the first functional group. Thereby, the above-mentioned free radical polymerization initiator captures the above-mentioned crosslinking agent remaining in the adhesive layer and not incorporated into the polymer during the storage of the diced wafer before use, thereby suppressing the above-mentioned cause during storage. The curing of the adhesive layer caused by the reaction of the cross-linking agent and the polymer or the reaction of the cross-linking agent with each other, and when the adhesive layer is irradiated with radiation, it can act on the radical polymerizable functional groups in the above-mentioned polymer to promote Hardening of the adhesive layer. Therefore, even after a long period of time after manufacture, the diced chip adhesive film of the first invention sufficiently reduces the adhesive force of the adhesive layer when the adhesive layer is irradiated with radiation. As a result, the adhesive layer after being cut The semiconductor wafer can be picked up well in the picking step.

In addition, the present invention provides a dicing die attach film (there is a case called "the dicing die attach film of the second invention"), which includes: a dicing tape having a laminated structure including a substrate and an adhesive layer And an adhesive layer, which is releasably attached to the adhesive layer in the dicing tape; and the adhesive layer includes a polymer, the polymer includes a functional group derived from a radical polymerizable and free radical The structural part of the crosslinking agent of the first functional group other than the polymerizable functional group, and the radical polymerizable functional group in the structural part derived from the crosslinking agent is formed by having a structure that can react with the first functional group It is formed by polymerization of the radical polymerization initiator of the second functional group. The diced die attach film of this structure can be used to obtain a semiconductor wafer with an adhesive layer in the manufacturing process of a semiconductor device.

As described above, the adhesive layer of the chip dicing tape in the chip dicing film of the second aspect of the present invention contains a polymer derived from a functional group having a radical polymerizable function and in addition to a radical polymerizable functional group The first functional group is a crosslinking agent structure, and the radical polymerizable functional group in the structure derived from the crosslinking agent is obtained by having a second functional group that can react with the first functional group Free radical polymerization initiator polymerization. The polymer can be used for the above-mentioned radical polymerization initiator (i.e., a radical polymerization initiator having a second functional group capable of reacting with the first functional group) and irradiated with radiation to cut the crystal of the first invention It is obtained by polymerizing the polymer contained in the adhesive layer of the dicing tape in the adhesive film. That is, the chip adhesive film of the second invention is obtained by irradiating the adhesive layer in the chip adhesive film of the first invention with radiation to harden it. The die-cut die-bonding film of the second invention suppresses the progress of the hardening of the adhesive layer even after a long period of time, so that the semiconductor wafer of the adhesive layer after being cut can be picked up well in the pickup step.

In addition, in the dicing die attach film of the first and second present invention, each polymer contained in the adhesive layer preferably includes the following structure, namely, includes a polymer derived from having a reaction with the above-mentioned first functional group The structural unit of the monomer component of the third functional group, and the structural unit derived from the above-mentioned monomer component and the structure derived from the above-mentioned crosslinking agent are formed by the chemical reaction of the above-mentioned first functional group and the above-mentioned third functional group Bond. The polymer having such a structure can be obtained by using a monomer component having a third functional group that can react with the first functional group as a monomer component that can react with the first functional group.

Furthermore, in the diced wafers of the first and second inventions, the second functional group is preferably a hydroxyl group. That is, the radical polymerization initiator having the above-mentioned second functional group is preferably a hydroxyl group-containing radical polymerization initiator. In order for the crosslinking agent to maintain the radical polymerizability of the crosslinking agent after being incorporated into the polymer, the first functional group must be combined with the functional group in the precursor polymer before the crosslinking agent (for example, the third functional group The group) is reactive, so the second functional group and the functional group in the precursor polymer (for example, the third functional group) must be similarly reactive with the first functional group. Therefore, it is easy to manufacture or obtain this kind of precursor polymer (for example, the precursor polymer having the third functional group mentioned above), the crosslinking agent having the first functional group, and the radical polymerization initiator having the second functional group. From the viewpoint of sex, the above configuration is preferable.

In addition, in the diced wafers of the first and second inventions, the first functional group is preferably a functional group that can react with a hydroxyl group. That is, the above-mentioned crosslinking agent is preferably a crosslinking agent having a functional group that can react with a hydroxyl group and a radical polymerizable functional group. In order to maintain the radical polymerizability of the crosslinking agent after the crosslinking agent is incorporated into the polymer, the first functional group must be combined with the functional group in the precursor polymer before the crosslinking agent (for example, the third functional group The group) is reactive, so the first functional group must be reactive with both the second functional group and the functional group in the precursor polymer (for example, the third functional group). Therefore, it is easy to manufacture or obtain this kind of precursor polymer (for example, the precursor polymer having the third functional group mentioned above), the crosslinking agent having the first functional group, and the radical polymerization initiator having the second functional group. From the viewpoint of sex, the above configuration is preferable.

In addition, in the diced wafers of the first and second inventions, the structure derived from the above-mentioned crosslinking agent is preferably a structure derived from a crosslinking agent having a (meth)acryloyl group and an isocyanate group . That is, it is preferable that the said crosslinking agent is a crosslinking agent which has a (meth)acryloyl group and an isocyanate group. In order to maintain the radical polymerizability of the crosslinking agent after the crosslinking agent is incorporated into the polymer, the first functional group must be combined with the functional group in the precursor polymer before the crosslinking agent (for example, the third functional group The group) is reactive, so the first functional group must be reactive with both the second functional group and the functional group in the precursor polymer (for example, the third functional group). Therefore, it is easy to manufacture or obtain this kind of precursor polymer (for example, the precursor polymer having the third functional group mentioned above), the crosslinking agent having the first functional group, and the radical polymerization initiator having the second functional group. From the viewpoint of sex, the above configuration is preferable. In particular, from the viewpoint of easy reaction tracking, and the ease of production or acquisition of the precursor polymer (for example, the precursor polymer having the third functional group), crosslinking agent, and radical polymerization initiator It is preferable that the first functional group is an isocyanate group, and the second functional group and the third functional group are hydroxy groups. [Effects of Invention]

The dicing die attach film of the first invention can achieve good picking up of the semiconductor wafer of the adhesive layer after the severing even after a long period of time after manufacturing. In addition, the dicing die bond film of the second invention can be obtained from the dicing die bond film of the first invention, which can achieve good picking up of the semiconductor wafer of the adhesive layer after being cut. Furthermore, in this specification, the diced die-cut film of the first and second inventions may be collectively referred to as "the die-cut die of the present invention".

[Cut crystal stick film] The dicing die film of the present invention includes: a dicing tape having a laminated structure including a substrate and an adhesive layer; and an adhesive layer that is peelably adhered to the adhesive layer in the dicing tape.

The adhesive layer of the dicing tape in the dicing adhesive film of the first invention further includes: a polymer, which is derived from having the above-mentioned radical polymerization while maintaining the radical polymerizability of the radical polymerizable functional group A structural part of a crosslinking agent for a sexual functional group and a first functional group other than the above-mentioned radically polymerizable functional group; and a radical polymerization initiator having a second functional group that can react with the above-mentioned first functional group.

In addition, the adhesive layer of the chip dicing tape in the chip dicing film of the second aspect of the present invention contains a polymer which is derived from having a radically polymerizable functional group and a first other than the radically polymerizable functional group. A structural part of a crosslinking agent of a functional group, and the radical polymerizable functional group derived from the structural part of the crosslinking agent is a radical having a second functional group that can react with the first functional group The polymerization initiator is polymerized.

The above-mentioned polymer in the adhesive layer in the chip adhesive film of the second invention uses the above-mentioned radical polymerization initiator (that is, the radical polymerization initiator having a second functional group that can react with the first functional group). Agent) and obtained by polymerizing the polymer contained in the adhesive layer of the dicing tape in the dicing adhesive film of the first invention by radiation irradiation. That is, the chip adhesive film of the second invention is obtained by irradiating the adhesive layer in the chip adhesive film of the first invention with radiation to harden it. The die-cut die-bonding film of the second invention suppresses the progress of the hardening of the adhesive layer even after a long period of time, so that the semiconductor wafer of the adhesive layer after being cut can be picked up well in the pickup step.

Hereinafter, one embodiment of the diced wafer of the present invention will be described. Fig. 1 is a schematic cross-sectional view showing one embodiment of the dicing die bond film of the first invention. As shown in FIG. 1, the dicing die bonding film 1 includes a dicing tape 10 and an adhesive layer 20 laminated on the adhesive layer 12 in the dicing tape 10, which can be used to obtain adhesion in the manufacture of semiconductor devices The extension step in the process of the semiconductor wafer of the agent layer.

The die-cutting die-bonding film 1 has a disk shape with a size corresponding to a semiconductor wafer to be processed in the manufacturing process of the semiconductor device. The diameter of the dicing die attach film 1 is, for example, in the range of 345-380 mm (corresponding to the 12-inch wafer type), 245-280 mm (corresponding to the 8-inch wafer type), and 195-230 mm. Within (corresponding to 6-inch wafer type), or within the range of 495～530 mm (corresponding to 18-inch wafer type). The dicing tape 10 in the dicing die bonding film 1 has a laminated structure including a substrate 11 and an adhesive layer 12.

(Substrate) The substrate in the dicing tape is an element that functions as a support in the dicing tape or the dicing adhesive film. As the substrate, for example, a plastic substrate (especially a plastic film) can be cited. The above-mentioned substrate may be a single layer, or a laminate of substrates of the same or different species.

As the resin constituting the above-mentioned plastic substrate, for example, low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block Copolypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid Polyolefin resins such as ester (random, alternating) copolymers, ethylene-butene copolymers, ethylene-hexene copolymers; polyurethane; polyethylene terephthalate (PET), polyethylene naphthalate Polyester such as ethylene formate and polybutylene terephthalate (PBT); polycarbonate; polyimide; polyether ether ketone; polyether imide; aromatic polyamide, fully aromatic poly Polyamides such as amide; polyphenylene sulfide; fluororesin; polyvinyl chloride; polyvinylidene chloride; cellulose resin; polysiloxane resin, etc. From the viewpoint of ensuring good heat shrinkability in the substrate and easily using the dicing tape or the local heat shrinkage of the substrate to maintain the distance between the wafers in the following room temperature stretching step, the substrate preferably contains ethylene-vinyl acetate The ester copolymer is the main component.

In addition, the main component of the base material is defined as the component that accounts for the largest mass ratio among the constituent components. Only one kind of the above-mentioned resin may be used, or two or more kinds may be used. When the adhesive layer is a radiation-curable adhesive layer as described below, the base material preferably has radiation permeability.

When the base material is a plastic film, the above-mentioned plastic film may be non-aligned or aligned in at least one direction (uniaxial direction, biaxial direction, etc.). When aligned in at least one direction, the plastic film can heat shrink in the at least one direction. If it has heat shrinkability, the outer peripheral part of the semiconductor wafer of the dicing tape can be heat-shrinked, so that the semiconductor wafer of the adhesive layer obtained by singulation can be fixed in a state where the distance between each other is enlarged. Therefore, it is easy to pick up semiconductor wafers. In order for the substrate and the dicing tape to have isotropic heat shrinkability, the substrate is preferably a biaxial alignment film. Furthermore, the above-mentioned plastic film aligned in at least one direction can be obtained by extending the plastic film without extension in the at least one direction (uniaxial extension, biaxial extension, etc.).

The heat shrinkage rate of the substrate and the dicing tape in the heat treatment test conducted under the conditions of a heating temperature of 100°C and a heating time of 60 seconds is preferably 1-30%, more preferably 2-25%, and more preferably It is 3-20%, particularly preferably 5-20%. The thermal shrinkage rate is preferably at least one of the MD (Machine DirectioN, longitudinal) direction and the TD (Transverse DirectioN, transverse) direction at least in one direction.

In order to improve the adhesion and retention of the adhesive layer of the substrate, for example, corona discharge treatment, plasma treatment, sand cushion treatment, ozone exposure treatment, flame exposure treatment, high pressure Physical treatment such as electric shock exposure treatment and ionized radiation treatment; chemical treatment such as chromic acid treatment; surface treatment such as easy bonding treatment by coating agent (primer). In addition, in order to impart antistatic properties, a conductive vapor deposition layer containing metals, alloys, oxides of these, and the like may be provided on the surface of the substrate. The surface treatment for improving adhesion is preferably applied to the entire surface of the adhesive layer side in the substrate.

From the viewpoint of ensuring the strength of the substrate as the support in the dicing tape and the chip bonding film, the thickness of the substrate is preferably 40 μm or more, more preferably 50 μm or more, and more preferably It is 55 μm or more, particularly preferably 60 μm or more. In addition, from the viewpoint of achieving moderate flexibility in the dicing tape and the dicing die bonding film, the thickness of the substrate is preferably 200 μm or less, more preferably 180 μm or less, and even more preferably 150 μm or less .

(Adhesive layer) As described above, the adhesive layer in the dicing die film includes: a polymer, which contains a functional group derived from the above-mentioned radically polymerizable functional group while maintaining the free-radical polymerizability of the radically polymerizable functional group. A structural part of a crosslinking agent for a first functional group other than the radical polymerizable functional group; and a radical polymerization initiator having a second functional group that can react with the above-mentioned first functional group.

Such a polymer can, for example, polymerize (copolymerize) a raw material monomer containing a monomer component having a functional group capable of reacting with the above-mentioned first functional group (for example, the following third functional group) to obtain a polymer (precursor polymer) After that, the above-mentioned crosslinking agent (ie, the crosslinking agent having a radically polymerizable functional group and a first functional group) undergoes a condensation reaction with the aforementioned precursor polymer while maintaining the radical polymerizability of the radically polymerizable functional group Or obtained by addition reaction. Since the adhesive layer containing the polymer obtained in this way maintains radical polymerizability, the adhesive layer is irradiated with radiation to polymerize and harden, thereby reducing the adhesive force. Therefore, for example, when using a dicing die sticking film in the dicing step, the adhesive layer can be used to show a relatively high adhesion state to suppress and prevent the adhesive layer from floating from the adhesive layer. On the other hand, In the subsequent picking step, the picking can be easily performed by reducing the adhesive force of the adhesive layer.

In addition, the above-mentioned radical polymerization initiator captures the above-mentioned cross-linking agent remaining in the adhesive layer which is not incorporated into the polymer during the storage of the dicing die-bonding film before use, thereby preventing the cross-linking agent from being combined with the polymer. The curing of the adhesive layer caused by the reaction of the polymer or the reaction of the crosslinking agent with each other, etc., and when the adhesive layer is irradiated with radiation, it can act on the radical polymerizable functional groups in the above-mentioned polymer to promote adhesion Hardening of the agent layer.

Therefore, even if the chip adhesive film of the above-mentioned embodiment has been produced for a long time, the adhesive force of the adhesive layer is sufficiently reduced when the adhesive layer is irradiated with radiation. As a result, the adhesion of the adhesive layer after being cut Semiconductor wafers can be picked up well in the picking step. In addition, in this specification, the above-mentioned "crosslinking agent having a radical polymerizable functional group and a first functional group other than the radical polymerizable functional group" may be referred to as "crosslinking agent X".

The polymer in the adhesive layer includes a first functional group derived from the radical polymerizable functional group and a first functional group other than the radical polymerizable functional group while maintaining the radical polymerizability of the radical polymerizable functional group The structure of the crosslinking agent (crosslinking agent X). That is, the crosslinking agent X before being incorporated into the polymer has a radical polymerizable functional group and a reactive functional group (first functional group) other than the radical polymerizable functional group. Examples of the radical polymerizable functional group include a carbon-carbon double bond having radiation polymerizability, such as vinyl, propenyl, isopropenyl, and (meth)acrylic groups (acrylic groups, methacrylic groups).醯基) etc. Among them, a (meth)acryloyl group is preferred. That is, the crosslinking agent X is preferably a crosslinking agent having a (meth)acrylic group and a first functional group.

The first functional group is a functional group other than the radically polymerizable functional group, and is a functional group that can react with the second functional group. As the first functional group, for example, a carboxyl group, an epoxy group, an aziridinyl group, a hydroxyl group, an isocyanate group, etc. may be mentioned. Among them, a functional group capable of reacting with a hydroxyl group is preferred, and an isocyanate group is more preferred. That is, the crosslinking agent X is preferably a crosslinking agent having a functional group capable of reacting with a hydroxyl group (especially an isocyanate group) and a radically polymerizable functional group. In order to maintain the radical polymerizability of the crosslinking agent X after the crosslinking agent X is incorporated into the polymer, the first functional group must be combined with the crosslinking agent X before the functional group in the precursor polymer (such as The following third functional group) has reactivity, so the first functional group must be reactive with both the second functional group and the functional group in the precursor polymer (for example, the following third functional group). Therefore, from the viewpoint of the ease of production or acquisition of such a precursor polymer, crosslinking agent X, and a radical polymerization initiator having a second functional group, the above-mentioned configuration is preferable.

Therefore, the above-mentioned crosslinking agent X is particularly preferably a crosslinking agent having functional groups (especially isocyanate groups) and (meth)acrylic groups that can react with hydroxyl groups. That is, the structural part derived from the above-mentioned crosslinking agent X is preferably a structural part derived from a crosslinking agent having a functional group (especially an isocyanate group) and a (meth)acrylic acid group that can react with a hydroxyl group.

As the above-mentioned crosslinking agent X, specifically, for example, methacryloyl isocyanate, 2-acryloyloxyethyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropylene Group-α,α-dimethylbenzyl isocyanate, etc. Among them, 2-propenoxyethyl isocyanate and 2-methacryloxyethyl isocyanate are preferred.

The aforementioned polymer contained in the adhesive layer, for example, as described above, can be obtained by polymerizing (copolymerizing) a raw material monomer containing a monomer component having a third functional group that can react with the aforementioned first functional group. The compound is then obtained by reacting the third functional group in the precursor polymer with the first functional group in the crosslinking agent X. That is, the above-mentioned polymer preferably includes a structure in which a structural unit derived from a monomer component having a third functional group capable of reacting with the above-mentioned first functional group, and a structural unit derived from the above-mentioned monomer component and The structural part derived from the said crosslinking agent X is bonded by the chemical reaction of the said 1st functional group and the said 3rd functional group.

Examples of the radical polymerizable functional group possessed by the monomer component having the third functional group include a carbon-carbon double bond having radiation polymerizability, such as vinyl, propenyl, isopropenyl, (methyl ) Acrylic (acrylic, methacrylic) and the like. Among them, a (meth)acryloyl group is preferred. The third functional group is a functional group capable of reacting with the first functional group, and examples thereof include a carboxyl group, an epoxy group, an aziridinyl group, a hydroxyl group, and an isocyanate group. Among them, a hydroxyl group is preferred.

Examples of the monomer component having the third functional group include epoxy group-containing monomers such as carboxyl group-containing monomers, acid anhydride monomers, and glycidyl group-containing monomers, aziridine group-containing monomers, hydroxyl group-containing monomers, Isocyanate group-containing monomers, etc. As for the monomer component which has the said 3rd functional group, only 1 type may be used, and 2 or more types may be used.

Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid, etc. .

As said acid anhydride monomer, maleic anhydride, itaconic anhydride, etc. are mentioned, for example.

As said glycidyl group-containing monomer, glycidyl (meth)acrylate, methyl glycidyl (meth)acrylate, etc. are mentioned, for example.

Examples of the hydroxyl-containing monomers include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and 6-hydroxyethyl (meth)acrylate. Hydroxyhexyl ester, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (4-hydroxymethylcyclohexyl) (meth)acrylate ) Methyl ester and so on.

Examples of the above-mentioned isocyanate group-containing monomer include methacryloyl isocyanate, 2-acryloyloxyethyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α , α-Dimethylbenzyl isocyanate, etc.

As the above-mentioned monomer having a third functional group, a hydroxyl group-containing monomer is preferred, and 2-hydroxyethyl (meth)acrylate is more preferred. That is, the above-mentioned polymer preferably contains a structural unit derived from a hydroxyl-containing monomer (especially 2-hydroxyethyl (meth)acrylate).

From the viewpoint of fully incorporating the crosslinking agent X into the polymer and maintaining the adhesiveness of the adhesive layer, among all the monomer components used to form the polymer except for the crosslinking agent X, the third The ratio of the monomer component of the functional group is preferably 5-40 mol%, more preferably 10-30 mol%.

The molar ratio of the structural part derived from the aforementioned crosslinking agent X to the structural unit derived from the monomer component having the third functional group is preferably 0.2 or more, more preferably 0.3 or more. In addition, the molar ratio is preferably 2.0 or less, more preferably 1.4 or less. If the molar ratio is 0.2 or more, a sufficient amount of radically polymerizable functional groups can be introduced into the polymer, and the adhesive force reduction effect by radiation curing can be sufficiently exhibited. If the molar ratio is 2.0 or less, the amount of the crosslinking agent X remaining in the adhesive layer will not become excessive, so that better picking can be achieved in the picking step.

The adhesive layer preferably contains the above-mentioned polymer as a base polymer (the most contained polymer in terms of mass ratio). The aforementioned polymer in the adhesive layer is preferably an acrylic polymer. The above-mentioned acrylic polymer is a polymer containing a structural unit derived from an acrylic monomer (a monomer component having a (meth)acrylic acid group in the molecule) as a structural unit of the polymer.

It is preferable that the said acrylic polymer contains the structural unit derived from (meth)acrylate at most by mass ratio. In addition, only one type of acrylic polymer may be used, or two or more types may be used. In addition, in this specification, the so-called "(meth)acrylic acid" means "acrylic acid" and/or "methacrylic acid" (either or both of "acrylic acid" and "methacrylic acid"), and others are also the same .

As said (meth)acrylate, the (meth)acrylate which may have a hydrocarbon group containing an alkoxy group is mentioned, for example. Examples of the (meth)acrylate containing a hydrocarbon group include alkyl (meth)acrylate, cycloalkyl (meth)acrylate, aryl (meth)acrylate, and the like. As the above-mentioned alkyl (meth)acrylate, for example, methyl, ethyl, propyl, isopropyl, butyl, isobutyl, second butyl, tertiary butyl of (meth)acrylic acid, Pentyl, isopentyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, lauryl Ester), tridecyl ester, tetradecyl ester, hexadecyl ester, stearyl ester, eicosyl ester, etc.

As said cycloalkyl (meth)acrylate, cyclopentyl (meth)acrylate, cyclohexyl etc. are mentioned, for example. As said (meth)acrylate aryl ester, the phenyl ester and benzyl ester of (meth)acrylate are mentioned, for example. Examples of the (meth)acrylate having an alkoxy group-containing hydrocarbon group include those in which one or more hydrogen atoms in the hydrocarbon group in the above-mentioned hydrocarbon group-containing (meth)acrylate ester is substituted with an alkoxy group, for example, (Meth) 2-methoxymethyl, 2-methoxyethyl, 2-methoxybutyl etc. of acrylic acid. The above-mentioned hydrocarbon group-containing (meth)acrylates which may have an alkoxy group may be used in one kind or two or more kinds.

The above-mentioned (meth)acrylate having a hydrocarbon group that may have an alkoxy group is preferably the total number of carbons in the ester portion (in the case of having an alkoxy group, the total number of carbons in the alkoxy group) is 6 ~10. Particularly preferred is a (meth)acrylate containing a hydrocarbon group with a total number of carbon atoms of 6-10. In these cases, the hardening of the adhesive layer can be inhibited even after a long period of time, and it takes into account the suppression of floating between the adhesive layer and the adhesive layer after the stretching step and the pick-up step. Good pick-up.

In order to appropriately express the basic characteristics of adhesion and other basic properties obtained by the hydrocarbon group-containing (meth)acrylate which may have an alkoxy group in the adhesive layer, all but the crosslinking agent X used to form the acrylic polymer The ratio of the hydrocarbon group-containing (meth)acrylate which may have an alkoxy group in the monomer component is preferably 40 mol% or more, more preferably 60 mol% or more.

Furthermore, in this specification, in the above-mentioned monomer components, a compound having a radiation polymerizable group (for example, a compound having a radical polymerizable function) is not included in the polymer phase before the adhesive layer is irradiated with radiation. The crosslinking agent of the first functional group).

As described above, the acrylic polymer is preferably polymerized with a monomer component having a third functional group. In order to modify the cohesive strength, heat resistance, etc. of the acrylic polymer, in addition to the monomer component with the third functional group, it may also contain structural units derived from other monomer components. Copolymerization of (meth)acrylates containing hydrocarbon groups which may have alkoxy groups. Examples of the above-mentioned other monomer components include functional group-containing monomers such as sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, and nitrogen atom-containing monomers. Only one type of the above-mentioned other monomer components may be used, or two or more types may be used.

As the above-mentioned sulfonic acid group-containing monomers, for example, styrene sulfonic acid, allyl sulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamide propanesulfonate Acid, sulfopropyl (meth)acrylate, (meth)acryloxynaphthalenesulfonic acid, etc.

As said phosphoric acid group-containing monomer, 2-hydroxyethyl acryloyl phosphate etc. are mentioned, for example.

Examples of the above-mentioned nitrogen-containing monomers include morpholine group-containing monomers such as (meth)acrylomorpholine, cyano group-containing monomers such as (meth)acrylonitrile, and alcohol-containing monomers such as (meth)acrylamide. Amino monomers, etc.

Furthermore, when the above-mentioned other monomer components do not include the monomer component used as the above-mentioned crosslinking agent X (for example, when using a monomer component having a third functional group as the above-mentioned other monomer component) The monomer component of the first functional group that reacts with three functional groups).

As the above-mentioned other monomer components, morpholine group-containing monomers are preferred among them. The above-mentioned morpholine group-containing monomer is preferably (meth)acrylomorpholine. That is, it is preferable that the said acrylic polymer contains the structural unit derived from (meth)acrylomorpholine.

In order to appropriately express the basic characteristics of adhesiveness obtained by the hydrocarbon group-containing (meth)acrylate which may have an alkoxy group in the adhesive layer 12, the acrylic polymer used to form the acrylic polymer other than the crosslinking agent X The ratio of the above-mentioned other monomer components in all monomer components is preferably 40 mol% or less (for example, 3-40 mol%), and more preferably 30 mol% or less (for example, 10-30 mol%).

In order to form a cross-linked structure in the polymer backbone of the acrylic polymer, the acrylic polymer may include a structural unit derived from a multifunctional monomer copolymerizable with the monomer component forming the acrylic polymer. Examples of the above-mentioned polyfunctional monomers include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl Glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate , Epoxy (meth)acrylate (e.g. poly(meth)glycidyl acrylate), (meth)acrylate polyester, (meth)acrylate urethane, etc. have (meth) in the molecule Monomers of acrylic and other reactive functional groups. Only one kind of the above-mentioned polyfunctional monomer may be used, or two or more kinds may be used. In order to appropriately express the basic characteristics of adhesion obtained by the (meth)acrylic acid ester containing a hydrocarbon group that may have an alkoxy group in the adhesive layer, the above-mentioned multiplicity of the monomer components used to form the acrylic polymer The ratio of the functional monomer is preferably 40 mol% or less, more preferably 30 mol% or less.

The mass average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably 350,000 to 1 million. If the mass average molecular weight is more than 300,000, there is a tendency that there are fewer low-molecular-weight substances in the adhesive layer, so that contamination of the adhesive layer or semiconductor wafers can be further suppressed.

The acrylic polymer is obtained by polymerizing one or more monomer components including acrylic monomers. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, and the like.

As described above, the adhesive layer contains a radical polymerization initiator having a second functional group that can react with the above-mentioned first functional group. The second functional group is a functional group that can react with the first functional group. As the second functional group, for example, a carboxyl group, an epoxy group, an aziridinyl group, a hydroxyl group, an isocyanate group, etc. may be mentioned. Among them, a hydroxyl group is preferred. That is, the radical polymerization initiator having the above-mentioned second functional group is preferably a hydroxyl group-containing radical polymerization initiator. In order to maintain the radical polymerizability of the crosslinking agent X even after the crosslinking agent X is incorporated into the polymer, the first functional group must be compatible with the functional group in the precursor polymer (for example, the third functional group ) Is reactive, so that the second functional group must be reactive with the first functional group like the functional group in the precursor polymer (for example, the third functional group). Therefore, from the viewpoint of the ease of production or acquisition of such a precursor polymer, crosslinking agent X, and a radical polymerization initiator having a second functional group, the above-mentioned configuration is preferable.

Examples of the combination of the above-mentioned first functional group and the above-mentioned second functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridinyl group, an aziridinyl group and a carboxyl group, a hydroxyl group and an isocyanate group, and an isocyanate group. Group and hydroxyl, etc. Among them, from the viewpoint of the ease of reaction tracking, a combination of a hydroxyl group and an isocyanate group, and a combination of an isocyanate group and a hydroxyl group are preferred. More preferably, as described above, the first functional group is a functional group capable of reacting with a hydroxyl group (especially an isocyanate group), and the second functional group is a hydroxyl group.

As a radical polymerization initiator having a second functional group, for example, 1-hydroxycyclohexyl phenyl ketone (for example, trade name "Irgacure 184"; manufactured by BASF), 2-methyl-2-hydroxypropiophenone ( For example, the brand name "Irgacure 1173"; manufactured by BASF Corporation), 4-(2-hydroxyethoxy)phenyl (2-hydroxy-2-propyl) ketone (for example, the brand name "Irgacure 2959"; manufactured by BASF Corporation), Trade name "Irgacure 127", α-hydroxy-α,α'-dimethylacetophenone, etc.

The content of the radical polymerization initiator having the second functional group in the adhesive layer is, for example, 0.05 to 20 parts by mass, preferably 0.1 to 10 parts by mass, more preferably 0.5 to 5, relative to 100 parts by mass of the polymer. Mass parts.

The adhesive layer may also include a crosslinking agent (other crosslinking agent) other than the crosslinking agent X. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be cross-linked, so that the low molecular weight substance in the adhesive layer is further reduced. In addition, the mass average molecular weight of the acrylic polymer can be increased. As said other crosslinking agent, a polyisocyanate compound, an epoxy compound, a polyol compound (polyphenol type compound etc.), an aziridine compound, a melamine compound etc. are mentioned, for example. In the case of using other crosslinking agents, the amount used is preferably about 5 parts by mass or less, and more preferably 0.1 to 5 parts by mass relative to 100 parts by mass of the polymer.

The adhesive layer is an adhesive layer (adhesive layer with reduced adhesive force) that can deliberately reduce the adhesive force by external action during the use of the chip adhesive film. That is, the adhesive layer in the chip adhesive film of the first invention is an adhesive layer with a reduced adhesive force. In addition, the adhesive layer obtained by polymerizing the polymer in the adhesive layer by radiation irradiation using a radical polymerization initiator having the above-mentioned second functional group (i.e., the dicing die stick film of the second invention) The middle adhesive layer is an adhesive layer (adhesive layer with non-decreasing adhesive force) in which the adhesive force is almost or not reduced due to external effects during the use of the diced wafer. The adhesive layer in the dicing die-cut film can be a reduced-adhesive adhesive layer or a non-adhesive adhesive layer. It can be used for the semiconductor wafer that is singulated using the dicing die-cut film. The method and conditions of monolithicization are appropriately selected.

Since the adhesive layer is a type of adhesive layer that can reduce the adhesive force, the adhesive layer can be used separately during the manufacturing process or use process of the chip adhesive film to show a relatively high adhesion state and a relatively low display The state of adhesion. For example, when the adhesive layer is attached to the adhesive layer of the dicing tape during the manufacturing process of the chip adhesive film, or when the chip adhesive film is used in the dicing step, the adhesive layer can be used to show relatively The state of high adhesive force prevents and prevents the adhesive layer from floating from the adhesive layer. On the other hand, the semiconductor of the adhesive layer is picked up by the dicing tape used for the self-cutting die film. In the chip picking step, it is easy to pick up by reducing the adhesive force of the adhesive layer.

The adhesive layer (for example, the adhesive layer 12) in the chip adhesive film of the present invention is an adhesive layer (radiation-curable adhesive layer) formed by a radiation-curable adhesive containing the above-mentioned polymer. As the above-mentioned radiation-curable adhesive, for example, an adhesive that is cured by irradiation of electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used, and it is particularly preferable to use those that can be cured by ultraviolet irradiation. Type of adhesive (ultraviolet curing adhesive). Furthermore, in this specification, the "radiation-curable adhesive layer" refers to an adhesive layer formed of a radiation-curable adhesive, and includes a radiation-curable radiation-curable adhesive layer and the adhesive. Both of the layers are cured by radiation and the radiation-curable adhesive layer is cured by radiation.

In addition to the above-mentioned components, the adhesive layer can also be formulated with additives used in known or customary adhesive layers such as crosslinking accelerators, adhesion imparting agents, anti-aging agents, colorants (pigments, dyes, etc.). Examples of the above-mentioned coloring agent include compounds colored by irradiation with radiation. In the case of containing a compound colored by radiation irradiation, it is possible to color only the part irradiated with radiation. The above-mentioned compound colored by radiation irradiation is a compound that is colorless or pale before radiation irradiation but becomes colored by radiation irradiation, and examples thereof include leuco dyes. The usage amount of the compound colored by radiation irradiation is not particularly limited, and can be appropriately selected.

The thickness of the adhesive layer is not particularly limited. From the viewpoint of obtaining the balance of the adhesive force to the adhesive layer before and after radiation curing of the adhesive layer, it is preferably about 1-50 μm, more preferably 2-30 μm, more preferably 5-25 μm.

(Adhesive layer) The adhesive layer has a function as a thermosetting adhesive for displaying die bonding, and also has an adhesive function for holding workpieces such as semiconductor wafers and frame members such as ring frames as required. The adhesive layer can be cut by applying tensile stress, and used for cutting by applying tensile stress.

The adhesive layer and the adhesive constituting the adhesive layer may include a thermosetting resin and, for example, a thermoplastic resin as an adhesive component, and may also include a thermoplastic resin having a thermosetting functional group that can react with a hardener to generate a bond. When the adhesive constituting the adhesive layer includes a thermoplastic resin having a thermosetting functional group, the adhesive does not need to include a thermosetting resin (epoxy resin, etc.). The adhesive layer may have a single-layer structure or a multilayer structure.

As the above-mentioned thermoplastic resin, for example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutylene Diene resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as 6-nylon or 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET or PBT, polyamides Amine resin, fluororesin, etc. Only one kind of the above-mentioned thermoplastic resin may be used, or two or more kinds may be used. As the above-mentioned thermoplastic resin, an acrylic resin is preferable for the reason that it is easy to ensure the bonding reliability by the adhesive layer due to the low ionic impurities and high heat resistance.

The above-mentioned acrylic resin preferably contains, as the most structural unit by mass ratio, a structural unit derived from a hydrocarbon group-containing (meth)acrylate that may have an alkoxy group. As the (meth)acrylic acid ester containing a hydrocarbon group that may have an alkoxy group, for example, a (meth)acrylic acid that may have a hydrocarbon group containing an alkoxy group as an acrylic polymer that may be contained in the above-mentioned adhesive layer is exemplified Exemplified by esters.

The above-mentioned acrylic resin may also include structural units derived from other monomer components, and the other monomer components may be copolymerized with a hydrocarbon group-containing (meth)acrylate which may have an alkoxy group. Examples of the above-mentioned other monomer components include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile. Such functional group-containing monomers, various polyfunctional monomers, and the like, specifically, those exemplified as other monomer components constituting the acrylic polymer that can be contained in the adhesive layer can be used.

When the adhesive layer contains a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, and thermosetting resins. Imide resin and so on. Only one kind of the above-mentioned thermosetting resin may be used, or two or more kinds may be used. Considering that there is a tendency for the content of ionic impurities, etc., which may cause corrosion of the semiconductor wafer to be bonded to be relatively small, as the above-mentioned thermosetting resin, epoxy resin is preferable. Furthermore, as the hardener of the epoxy resin, a phenol resin is preferable.

As the above-mentioned epoxy resins, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, and bisphenol Type, phenolic novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoin type, triglycidyl isocyanurate type, glycidylamine type The epoxy resin and so on. Among them, in terms of sufficient reactivity with phenol resin as a hardener and excellent heat resistance, novolac type epoxy resin, biphenyl type epoxy resin, trihydroxyphenylmethane type epoxy resin, Tetraphenol ethane type epoxy resin.

Examples of phenol resins that can act as hardeners for epoxy resins include novolak-type phenol resins, resol-type phenol resins, and polyhydroxystyrenes such as poly(p-hydroxystyrene). Examples of novolak-type phenol resins include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tertiary butylphenol novolac resins, nonylphenol novolac resins, and the like. Only one kind of the above-mentioned phenol resin may be used, or two or more kinds may be used. Among them, from the viewpoint of a tendency to increase the connection reliability of the adhesive when used as a curing agent for an epoxy resin used as an adhesive for crystal bonding, phenol-based novolac resins and phenolaranes are preferred. Base resin.

From the viewpoint of allowing the curing reaction of the epoxy resin and the phenol resin to proceed sufficiently in the adhesive layer, the phenol resin is contained in an amount such that per equivalent of epoxy groups in the epoxy resin component, the phenol resin The hydroxyl group in the resin is preferably 0.5 to 2.0 equivalents, more preferably 0.7 to 1.5 equivalents.

In the case where the adhesive layer contains a thermosetting resin, from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the adhesive layer, the content ratio of the thermosetting resin relative to the total mass of the adhesive layer is preferably 5 to 60% by mass, more preferably 10 to 50% by mass.

When the adhesive layer contains a thermoplastic resin having a thermosetting functional group, as the thermoplastic resin, for example, a thermosetting functional group-containing acrylic resin can be used. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth)acrylate which may have an alkoxy group as the most structural unit in terms of mass ratio. Examples of the (meth)acrylic acid esters containing hydrocarbon groups that may have alkoxy groups include, for example, acrylic polymers that may be included in the above-mentioned adhesive layer, which may have hydrocarbon groups containing alkoxy groups. Exemplified by esters.

On the other hand, as the thermosetting functional group in the thermosetting functional group-containing acrylic resin, for example, a glycidyl group, a carboxyl group, a hydroxyl group, an isocyanate group, etc. can be cited. Among them, glycidyl and carboxyl groups are preferred. That is, as the thermosetting functional group-containing acrylic resin, glycidyl group-containing acrylic resin and carboxyl group-containing acrylic resin are particularly preferred.

Furthermore, it is preferable to contain a curing agent together with a thermosetting functional group-containing acrylic resin. As the curing agent, for example, a crosslinking agent that can be included in the radiation-curable adhesive for forming the adhesive layer is exemplified . When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol-based compound as the hardening agent. For example, the various phenol resins described above can be used.

Regarding the adhesive layer before hardening for crystal bonding, in order to achieve a certain degree of cross-linking, for example, it is preferable to bond with the functional group at the end of the molecular chain of the above-mentioned resin that may be contained in the adhesive layer. The polyfunctional compound is previously formulated as a crosslinking component in the resin composition for forming an adhesive layer. With regard to the adhesive layer, such a configuration is preferable from the viewpoint of improving the adhesive properties at high temperature and the viewpoint of improving the heat resistance.

As said crosslinking component, a polyisocyanate compound is mentioned, for example. Examples of the polyisocyanate compound include toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, adducts of polyol and diisocyanate, and the like. Moreover, as the said crosslinking component, you may use together other polyfunctional compound, such as an epoxy resin, and a polyisocyanate compound.

The content of the cross-linking component in the resin composition for forming an adhesive layer relative to 100 parts by mass of the resin having the above-mentioned functional group capable of reacting with the cross-linking component to bond, the cohesive force of the formed adhesive layer is improved From a viewpoint, it is preferably 0.05 parts by mass or more, and from the viewpoint of improving the adhesive force of the formed adhesive layer, it is preferably 7 parts by mass or less.

The adhesive layer preferably contains a filler. By blending fillers into the adhesive layer, the electrical conductivity, thermal conductivity, and elastic modulus of the adhesive layer can be adjusted. As the filler, inorganic fillers and organic fillers can be cited, and inorganic fillers are particularly preferred.

As inorganic fillers, for example, in addition to aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, In addition to crystalline silicon oxide and amorphous silicon oxide, metal monomers such as aluminum, gold, silver, copper, and nickel, or alloys, amorphous carbon black, graphite, and the like can be cited. The filler may have various shapes such as spherical, needle-like, and flake-like shapes. As the above-mentioned filler, only one kind may be used, or two or more kinds may be used.

The average particle size of the above filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. If the above-mentioned average particle size is 0.005 μm or more, the wettability and adhesiveness to adherends such as semiconductor wafers are further improved. If the average particle size is 10 μm or less, the effect of the filler added for imparting the above-mentioned characteristics can be made sufficient, and heat resistance can be ensured. In addition, the average particle diameter of the filler can be determined using, for example, a brightness type particle size distribution meter (for example, a brand name "LA-910"; manufactured by Horiba Manufacturing Co., Ltd.).

The adhesive layer may also contain other ingredients as needed. Examples of the above-mentioned other components include curing catalysts, flame retardants, silane coupling agents, ion scavengers, dyes, and the like. Only one type of the above-mentioned other additives may be used, or two or more types may be used.

As said flame retardant, antimony trioxide, antimony pentoxide, brominated epoxy resin etc. are mentioned, for example.

Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyl Group diethoxysilane and so on.

Examples of the ion scavenger include hydromagnesium carbonates, bismuth hydroxide, hydrous antimony oxide (for example, "IXE-300" manufactured by Toagosei Co., Ltd.), and zirconium phosphate with a specific structure (for example, Toagosei Co., Ltd.). "IXE-100"), magnesium silicate (such as "KYOWAAD 600" manufactured by Concord Chemical Industry Co., Ltd.), aluminum silicate (such as "KYOWAAD 700" manufactured by Concord Chemical Industry Co., Ltd.), etc.

Compounds that can form complexes with metal ions can also be used as ion traps. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridine-based compounds. Among them, from the viewpoint of the stability of the complex formed with the metal ion, a triazole-based compound is preferred.

Examples of the triazole-based compound include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, and carboxybenzotriazole. Azole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chlorobenzotriazole, 2-(2-Hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-pentylphenyl) Benzotriazole, 2-(2-hydroxy-5-third octylphenyl) benzotriazole, 6-(2-benzotriazole)-4-third octyl-6'-third Butyl-4'-methyl-2,2'-methylene bisphenol, 1-(2',3'-hydroxypropyl)benzotriazole, 1-(1,2-dicarboxydiethyl) ) Benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-tertiary pentyl-6-{(H-benzotriazole-1-yl) Methyl)phenol, 2-(2-hydroxy-5-tert-butylphenyl)-2H-benzotriazole, 3-(2H-benzotriazol-2-yl)-5-(1,1 -Dimethylethyl)-4-hydroxy, octyl-3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl] Propionate, 2-ethylhexyl-3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2 -(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1,1,3,3-tetramethylbutyl)phenol, 2 -(2H-benzotriazol-2-yl)-4-tert-butylphenol, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-5- Tertiary octylphenyl)-benzotriazole, 2-(3-tertiary butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy- 3,5-Di-tert-pentylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chlorobenzotriazole, 2-[ 2-hydroxy-3,5-bis(1,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazole) -2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol], 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)benzene Yl]-2H-benzotriazole, methyl-3-[3-(2H-benzotriazol-2-yl)-5-tert-butyl-4-hydroxyphenyl]propionate, etc.

In addition, specific hydroxyl-containing compounds such as hydroquinone compounds, hydroxyanthraquinone compounds, and polyphenol compounds can also be used as ion scavengers. Specific examples of such a hydroxyl-containing compound include 1,2-benzenediol, alizarin, anthracenol, tannin, gallic acid, methyl gallate, and gallic phenol.

The thickness of the adhesive layer (in the case of a laminate, the total thickness) is not particularly limited, and is, for example, 1 to 200 μm. The upper limit is preferably 100 μm, more preferably 80 μm. The lower limit is preferably 3 μm, more preferably 5 μm.

In the chip adhesive film 1, the peeling force between the adhesive layer and the adhesive layer in the T-type peeling test under the conditions of a temperature of 23°C and a peeling speed of 300 mm/min is preferably 0.3 N/20 mm or more, more preferably 0.5 N/20 mm or more, and still more preferably 0.7 N/20 mm or more. If the above-mentioned peeling force is 0.3 N/20 mm or more, the adhesion between the adhesive layer and the adhesive layer can be made moderate. When the stretching step is performed without radiation curing, it is easy to suppress the generation of the stretching step and Subsequent peeling (floating) between the adhesive layer and the adhesive layer. In addition, the higher the peel force, the better, but the upper limit may be, for example, 10 N/20 mm, 5.0 N/20 mm, or 3.0 N/20 mm. Furthermore, regarding the chip adhesive film of the second invention, the peeling force of the adhesive layer before radiation curing (the peeling force in the T-type peeling test before ultraviolet curing) is preferably the above value.

The peeling force between the adhesive layer and the adhesive layer after the initial radiation curing in the T-type peeling test under the conditions of 23°C and 300 mm/min peeling speed in the chip adhesive film 1 ( There is a situation called "the peel force (initial) in the T-type peel test after ultraviolet curing"), preferably 0.3 N/20 mm or less, more preferably 0.2 N/20 mm or less. If the above-mentioned peeling force is 0.3 N/20 mm or less, it is easy to achieve good pick-up in the pick-up step after radiation curing. In addition, the above-mentioned peeling force of the radiation-cured adhesive layer in the diced wafer 1 after storage at 50°C for 1 week (there is a peeling force called "the peeling force in the T-type peel test after ultraviolet curing (after时)” In the case of), the above-mentioned value is preferable. In addition, the above-mentioned peeling force (the peeling force (with time) in the T-type peeling test after ultraviolet curing) of the adhesive layer in the chip adhesive film of the second invention is preferably the above-mentioned value.

About the said T-type peeling test, it performed using the tensile tester (brand name "Autograph AGS-J"; manufactured by Shimadzu Corporation). The sample piece used for this test can be produced as follows. After attaching a backing tape (trade name "BT-315"; manufactured by Nitto Denko Co., Ltd.) to the adhesive layer side of the chip adhesive film, a test piece with a width of 50 mm × a length of 120 mm was cut out.

In the chip adhesive film of the present invention, the peel force rise rate calculated by the following formula is preferably 30% or less, more preferably 25% or less, and still more preferably 20% or less. If the above-mentioned peeling force rise rate is 30% or less, even after a long time has elapsed after manufacturing, it is possible to achieve good pickup of the semiconductor wafer of the adhesive layer after being cut. Peel force increase rate (%) = Peel force in T-peel test after ultraviolet curing (time) (N/20 mm)/Peel force in T-peel test after ultraviolet curing (initial) (N/20 mm)×100

The dicing die attach film may also include spacers. Specifically, it can be in the form of a sheet including spacers in each diced chip adhesive film, or the spacers can be elongated, a plurality of diced chip adhesive films are arranged on the spacer and the spacer is wound. Become the form of the drum.

The spacer is an element used to cover and protect the surface of the adhesive layer of the chip adhesive film, and peel off from the film when the chip adhesive film is used. Examples of separators include polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, and surface coating with a fluorine-based release agent or a long-chain alkyl acrylate-based release agent. The resulting plastic film or paper, etc. The thickness of the spacer is, for example, 5 to 200 μm.

The dicing die-cutting film 1 which is one embodiment of the die-cutting die-cutting film of the present invention is manufactured as follows, for example.

The dicing die-cutting film 1 which is one embodiment of the die-cutting die-cutting film of the present invention is manufactured as follows, for example.

First, the substrate 11 can be obtained by forming a film by a known or commonly used film forming method. As the above-mentioned film forming method, for example, a calendering method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, etc. .

Then, on the substrate 11, a composition (adhesive composition) for forming an adhesive layer 12 including an adhesive and a solvent for forming the adhesive layer 12 (adhesive composition) is applied to form a coating film, and then, if necessary, The coating film is cured by solvent removal, curing, etc., and the adhesive layer 12 can be formed. Examples of the above-mentioned coating method include well-known or commonly used coating methods such as roll coating, screen coating, and gravure coating. In addition, as the solvent removal conditions, for example, the temperature is 80 to 150°C and the time is 0.5 to 5 minutes.

In addition, after the adhesive composition is applied to the separator to form a coating film, the coating film may be cured under the solvent removal conditions described above to form the adhesive layer 12. After that, the adhesive layer 12 and the spacer are attached to the substrate 11 together. In the above manner, the dicing tape 10 can be produced.

Regarding the adhesive layer 20, first, a composition (adhesive composition) for forming the adhesive layer 20 containing a resin, a filler, a curing catalyst, a solvent, and the like is produced. Then, after the adhesive composition is applied on the separator to form a coating film, the coating film is cured by solvent removal, curing, or the like as necessary to form the adhesive layer 20. The coating method is not particularly limited, and examples thereof include well-known or commonly used coating methods such as roll coating, screen coating, and gravure coating. In addition, as solvent removal conditions, for example, the temperature is 70 to 160°C and the time is 1 to 5 minutes.

Then, the separator is peeled off from the dicing tape 10 and the adhesive layer 20 respectively, and the adhesive layer 20 and the adhesive layer 12 are bonded together so that they become bonding surfaces. The bonding can be performed by crimping, for example. At this time, the lamination temperature is not particularly limited, and for example, it is preferably 30 to 50°C, more preferably 35 to 45°C. In addition, the linear pressure is not particularly limited, and, for example, it is preferably 0.1 to 20 kgf/cm, and more preferably 1 to 10 kgf/cm.

In the above manner, for example, the dicing die film 1 shown in FIG. 1 can be produced.

Furthermore, one embodiment of the diced die sticky film of the second invention can be, for example, the diced die stick film 1 obtained in the above-mentioned manner, for example, the adhesive layer 12 is irradiated with radiation from the side of the substrate 11 to make the adhesive The layer is hardened and made. The irradiation amount is, for example, 50 to 500 mJ, preferably 100 to 300 mJ. The area (irradiated area R) in the dicing die stick film where radiation is irradiated is usually the area where the adhesive layer 20 in the adhesive layer 12 is attached except for its peripheral edge. In the case of setting the irradiation area R locally, it can be performed by forming a mask corresponding to the pattern of the area other than the irradiation area R. In addition, a method of irradiating radiation in dots to form the irradiation area R can also be cited.

[Method of Manufacturing Semiconductor Device] Using the diced die attach film of the present invention, a semiconductor device can be manufactured. Specifically, a semiconductor device can be manufactured by a manufacturing method including the following steps: attaching a semiconductor wafer containing a plurality of semiconductor chips to the adhesive layer side of the dicing die bond film of the present invention Divided body, or a semiconductor wafer that can be singulated into a plurality of semiconductor chips (there is a situation called "Step A"); under relatively low temperature conditions, the dicing chip of the present invention Die tape is extended, and at least the adhesive layer is cut to obtain a semiconductor wafer with the adhesive layer (there is a situation called "Step B"); under relatively high temperature conditions, the die tape is extended to remove The distance between the semiconductor wafers of the adhesive layer is enlarged (there is a situation called "step C"); and the semiconductor wafers of the adhesive layer are picked up (there is a situation called "step D"). Furthermore, FIGS. 2-11 show the steps in the manufacturing method of the semiconductor device using the die-cutting die-bonding film 1. The die-cutting die-cutting film of the second invention can be used instead of the die-cutting die bonding film of the first invention. The film of dicing and sticking film 1.

The above-mentioned divided body of the semiconductor wafer including a plurality of semiconductor chips used in step A, or a semiconductor wafer that can be singulated into a plurality of semiconductor chips can be obtained as follows. First, as shown in FIGS. 2(a) and 2(b), a dividing groove 30a is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the side of the first surface Wa in the semiconductor wafer W, and wiring structures required for the semiconductor elements (not shown) have been formed on the first surface Wa.

Then, after bonding the wafer processing tape T1 with the adhesive surface T1a to the second surface Wb side of the semiconductor wafer W, the wafer processing tape T1 is used to hold the semiconductor wafer W. A rotating blade such as a device forms a dividing groove 30a of a specific depth on the side of the first surface Wa of the semiconductor wafer W. The dividing groove 30a is used to divide the semiconductor wafer W into gaps of semiconductor wafer units (in FIGS. 2 to 4, the dividing groove 30a is schematically represented by a thick solid line).

Then, as shown in FIG. 2(c), the wafer processing tape T2 having the adhesive surface T2a is attached to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape is peeled from the semiconductor wafer W T1.

Then, as shown in FIG. 2(d), while the semiconductor wafer W is held in the wafer processing tape T2, the semiconductor wafer W is polished from the second surface Wb to be thinned to a specific Thickness (wafer thinning step). The grinding process can be performed using a grinding process device equipped with a grinding wheel. Through this wafer thinning step, in this embodiment, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor wafers 31 is formed.

Specifically, the semiconductor wafer 30A has a portion (connecting portion) that connects portions of the wafer that are singulated into a plurality of semiconductor wafers 31 on the second surface Wb side. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the second surface Wb side tip of the dividing groove 30a is, for example, 1-30 μm, preferably 3-20 μm .

(Step A) In step A, on the adhesive layer 20 side of the dicing die bonding film 1, a split body of a semiconductor wafer including a plurality of semiconductor chips, or a semiconductor wafer that can be singulated into a plurality of semiconductor chips is attached.

In one embodiment in step A, as shown in FIG. 3(a), the adhesive layer 20 of the dicing die attach film 1 is attached to the semiconductor wafer 30A held on the wafer processing tape T2. Thereafter, as shown in FIG. 3(b), the wafer processing tape T2 is peeled from the semiconductor wafer 30A.

Furthermore, after bonding the semiconductor wafer 30A to the adhesive layer 20, the adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the side of the substrate 11. The irradiation amount is, for example, 50 to 500 mJ/cm ² , preferably 100 to 300 mJ/cm ² . The area (irradiated area R shown in FIG. 1) that is irradiated as a measure for reducing the adhesive force of the adhesive layer 12 in the chip adhesive film 1 is, for example, the area where the adhesive layer 20 is attached in the adhesive layer 12 The area other than the periphery.

(Step B) In step B, under relatively low temperature conditions, the dicing tape 10 in the dicing die bonding film 1 is extended, and at least the adhesive layer 20 is cut to obtain a semiconductor wafer of the adhesive layer.

In one embodiment of step B, firstly, the ring frame 41 is attached to the adhesive layer 12 of the dicing tape 10 in the chip dicing film 1, and then as shown in FIG. 4(a), The dicing die attach film 1 with the semiconductor wafer 30A is fixed to the holder 42 of the extension device.

Then, as shown in FIG. 4(b), the first elongation step (cooling elongation step) under relatively low temperature conditions is performed, and the semiconductor wafer 30A is singulated into a plurality of semiconductor wafers 31, and the diced wafers are bonded The adhesive layer 20 of the crystal film 1 is cut into small pieces of the adhesive layer 21 to obtain the semiconductor wafer 31 of the adhesive layer.

In the cooling and stretching step, the hollow-cylindrical lifting member 43 provided by the stretching device abuts the dicing tape 10 on the lower side of the dicing die bonding film 1 in the figure and is raised, and the semiconductor wafer will be attached The dicing tape 10 of the dicing die bonding film 1 of 30A is stretched in a two-dimensional direction including the diameter direction and the circumferential direction of the semiconductor wafer 30A.

The extension is performed under the condition that a tensile stress in the range of 15-32 MPa, preferably 20-32 MPa is generated in the dicing tape 10. The temperature condition in the cooling extension step is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C. The extension speed (the speed at which the lifting member 43 is raised) in the cooling extension step is preferably 0.1-400 mm/sec, more preferably 0.3-300 mm/sec. In addition, the extension amount in the cooling extension step is preferably 1-20 mm, more preferably 2-16 mm.

In step B, when a semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips is used, a portion of the semiconductor wafer 30A that is thinner and prone to cracking is cut to produce a single chip to the semiconductor chip 31化. At the same time, in step B, the deformation in each region where each semiconductor wafer 31 is adhered closely to the adhesive layer 20 of the adhesive layer 12 of the extended dicing tape 10 is suppressed. On the other hand, the semiconductor wafer 31 The part of the dividing groove in the vertical direction in the figure does not produce such a deformation suppression effect. In this state, the tensile stress generated by the dicing tape 10 is generated. As a result, in the adhesive layer 20, the portion of the dividing groove between the semiconductor wafers 31 in the vertical direction is cut. After being cut by extension, as shown in FIG. 4(c), the lifting member 43 is lowered to release the extended state in the dicing tape 10.

(Step C) In step C, under relatively high temperature conditions, the dicing tape 10 is extended to expand the distance between the semiconductor wafers of the adhesive layer.

In one embodiment of step C, first, as shown in FIG. 5(a), the second extension step (normal temperature extension step) under relatively high temperature conditions is performed, and the semiconductor wafer 31 of the adhesive layer The distance (the separation distance) expands.

In step C, the hollow cylindrical lifting member 43 of the extension device is raised again, and the dicing tape 10 of the dicing die sticking film 1 is extended. The temperature condition in the second extension step is, for example, 10°C or higher, preferably 15 to 30°C. The extension speed in the second extension step (the speed at which the lifting member 43 is raised) is, for example, 0.1 to 10 mm/sec, preferably 0.3 to 1 mm/sec. In addition, the extension amount in the second extension step is, for example, 3-16 mm. In step C, the distance between the semiconductor wafers 31 of the adhesive layer is expanded to the extent that the semiconductor wafers 31 of the adhesive layer can be picked up appropriately from the dicing tape 10 in the following pickup step. After extending the separation distance, as shown in FIG. 5(b), the lifting member 43 is lowered to release the extended state in the dicing tape 10.

From the viewpoint of suppressing the narrowing of the distance between the semiconductor wafer 31 of the adhesive layer on the dicing tape 10 after the extended state is released, it is preferable to compare the semiconductor wafer 31 in the dicing tape 10 before the extended state is released. The outer part of the holding area is heated to shrink it.

After step C, there may also be a cleaning step of washing the semiconductor wafer 31 side of the dicing tape 10 of the semiconductor wafer 31 with the adhesive layer using a cleaning solution such as water as needed.

(Step D) In step D (pickup step), the semiconductor wafer of the adhesive layer obtained by singulation is picked up. In one embodiment of step D, after the above-mentioned cleaning step as necessary, as shown in FIG. 6, the semiconductor wafer 31 of the adhesive layer is picked up from the dicing tape 10. For example, for the semiconductor wafer 31 of the adhesive layer of the pick-up target, the pin member 44 of the pick-up mechanism is raised on the lower side of the dicing tape 10 in the figure, and then the dicing tape 10 is lifted, and then it is sucked by the suction jig 45 maintain. In the picking step, the lifting speed of the pin member 44 is, for example, 1-100 mm/sec, and the lifting amount of the pin member 44 is, for example, 50-3000 μm.

The manufacturing method of the above-mentioned semiconductor device may also include other steps besides steps A to D. For example, in one embodiment, as shown in FIG. 7(a), the picked up semiconductor wafer 31 of the adhesive layer is temporarily bonded to the adherend 51 via the adhesive layer 21 (temporary bonding step).

As the adherend 51, for example, a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, a separately produced semiconductor wafer, and the like can be cited. The shear adhesive force at 25° C. when the adhesive layer 21 is temporarily fixed is preferably 0.2 MPa or more with respect to the adherend 51, and more preferably 0.2-10 MPa. The above-mentioned shear adhesion force of the adhesive layer 21 is 0.2 MPa or more in the following wire bonding step, which can suppress the generation of the adhesive layer 21 and the semiconductor wafer 31 or the bonded surface of the bonded body 51 due to ultrasonic vibration or heating. Shearing deformation allows proper wire bonding. In addition, the shear adhesive force at 175° C. when the adhesive layer 21 is temporarily fixed is preferably 0.01 MPa or more with respect to the adherend 51, and more preferably 0.01-5 MPa.

Then, as shown in FIG. 7(b), the electrode pads (not shown) of the semiconductor wafer 31 and the terminal portions (not shown) of the bonded body 51 are electrically connected via bonding wires 52 (wire bonding step) .

The connection between the electrode pads of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 can be achieved by ultrasonic welding accompanied by heating, so that the adhesive layer 21 is not thermally hardened. As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The wire heating temperature in wire bonding is, for example, 80 to 250°C, preferably 80 to 220°C. In addition, the heating time is several seconds to several minutes.

Then, as shown in FIG. 7(c), the semiconductor wafer 31 is sealed by the sealing resin 53 for protecting the semiconductor wafer 31 or the bonding wire 52 on the adherend 51 (sealing step).

In the sealing step, the thermal curing of the adhesive layer 21 is performed. In the sealing step, the sealing resin 53 is formed by, for example, a transfer molding technique using a mold. As a constituent material of the sealing resin 53, for example, epoxy resin can be used. In the sealing step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185° C., and the heating time is, for example, 60 seconds to several minutes.

When the curing of the sealing resin 53 in the sealing step is not sufficiently performed, a subsequent curing step for completely curing the sealing resin 53 is performed after the sealing step. Even when the adhesive layer 21 is not completely thermally cured in the sealing step, the adhesive layer 21 can be completely thermally cured together with the sealing resin 53 in the subsequent curing step. In the subsequent hardening step, the heating temperature is, for example, 165 to 185°C, and the heating time is, for example, 0.5 to 8 hours.

In the above embodiment, after the semiconductor wafer 31 of the adhesive layer is temporarily adhered to the adherend 51 as described above, the wire bonding step is performed without the adhesive layer 21 being completely thermally cured. In place of this structure, in the above-mentioned method of manufacturing a semiconductor device, after the semiconductor wafer 31 of the adhesive layer is temporarily adhered to the adherend 51, the adhesive layer 21 is thermally cured and then the wire bonding step is performed.

In the above-mentioned method of manufacturing a semiconductor device, as another embodiment, the wafer thinning step shown in FIG. 8 may be performed instead of the wafer thinning step described above with reference to FIG. 2(d). After going through the process described above with reference to FIG. 2(c), in the wafer thinning step shown in FIG. 8, while the semiconductor wafer W is held in the wafer processing tape T2, the wafer The circle is thinned until it reaches a specific thickness by polishing from the second surface Wb, and a semiconductor wafer divided body 30B including a plurality of semiconductor wafers 31 and held by the wafer processing tape T2 is formed.

In the above-mentioned wafer thinning step, a method of polishing the wafer until the dividing groove 30a is exposed on the second surface Wb side (first method) may be used, and the following method (second method) may also be used: from the second surface Wb The wafer is side-polished until it reaches the dividing groove 30a, and thereafter, cracks are generated between the dividing groove 30a and the second surface Wb by the pressing force of the spin grinding wheel on the wafer to form a semiconductor wafer dividing body 30B . According to the method used, the depth from the first surface Wa of the dividing groove 30a formed in the above manner with reference to FIGS. 2(a) and 2(b) is appropriately determined.

In FIG. 8, the dividing groove 30 a through the first method, or the dividing groove 30 a through the second method, and the cracks connected to the dividing groove are schematically represented by thick solid lines. In the above-mentioned method of manufacturing a semiconductor device, in step A, the semiconductor wafer dividing body 30B produced in this way may be used as the semiconductor wafer dividing body instead of the semiconductor wafer 30A, and then proceeding with reference to FIGS. 3 to 7 above The article describes the steps.

9(a) and 9(b) show step B in this embodiment, that is, the first stretching step (cooling and stretching step) performed after the semiconductor wafer split body 30B is attached to the dicing die film 1. .

In step B of this embodiment, the hollow cylindrical lifting member 43 provided by the extension device is brought into contact with the dicing tape 10 on the lower side of the dicing adhesive film 1 in the figure, and then is attached The dicing tape 10 of the dicing die attach film 1 with the semiconductor wafer split body 30B is stretched in a two-dimensional direction including the diameter direction and the circumferential direction of the semiconductor wafer split body 30B.

The extension is performed under the condition that a tensile stress in the range of 5-28 MPa, preferably 8-25 MPa, is generated in the dicing tape 10, for example. The temperature condition in the cooling extension step is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C. The extension speed (the speed at which the lifting member 43 is raised) in the cooling extension step is preferably 0.1-400 mm/sec, more preferably 0.3-300 mm/sec. In addition, the extension amount in the cooling extension step is preferably 1-20 mm, more preferably 2-16 mm.

Through this cooling and extension step, the adhesive layer 20 of the dicing die attach film 1 is cut into small pieces of the adhesive layer 21 to obtain the semiconductor wafer 31 of the adhesive layer. Specifically, in the cooling and extending step, the area of each semiconductor wafer 31 closely contacted with the semiconductor wafer split body 30B in the adhesive layer 20 closely connected to the adhesive layer 12 of the extended dicing tape 10 is deformed. Suppressing, on the other hand, the part of the dividing groove 30a between the semiconductor wafers 31 in the vertical direction in the figure does not produce such a deformation restraining effect. In this state, the tensile stress produced by the dicing tape 10 is produced. As a result, the part of the dividing groove 30a between the semiconductor wafers 31 in the adhesive layer 20 in the vertical direction in the figure is cut.

In the above-mentioned method of manufacturing a semiconductor device, as yet another embodiment, a semiconductor wafer 30C produced as follows may be used instead of the semiconductor wafer 30A or the semiconductor wafer divided body 30B used in step A.

In this embodiment, as shown in FIGS. 10(a) and 10(b), first, a modified region 30b is formed in the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the side of the first surface Wa in the semiconductor wafer W, and wiring structures required for the semiconductor elements (not shown) have been formed on the first surface Wa.

Then, after bonding the wafer processing tape T3 with the adhesive surface T3a to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held in the wafer processing tape T3, and the light is collected The laser light that is aligned with the inside of the wafer is irradiated to the semiconductor wafer W along the pre-dividing line from the side opposite to the wafer processing tape T3, and the semiconductor wafer W is modified by ablation using multiphoton absorption Area 30b. The modified region 30b is used to separate the semiconductor wafer W into weakened regions of semiconductor wafer units.

Regarding the method of forming the modified region 30b on the pre-division line in the semiconductor wafer by laser light irradiation, for example, it is described in detail in Japanese Patent Laid-Open No. 2002-192370, but the laser light irradiation conditions in this embodiment are, for example, Adjust appropriately within the following conditions.

<Laser beam irradiation conditions> (A) Laser Semiconductor laser light source laser excitation Nd: YAG (Neodymium-doped Yttrium Aluminium Garnet, neodymium-doped yttrium aluminum garnet) 1064 nm laser light spot cross-sectional area of the laser wavelength of 3.14 × 10 ^{- 8} cm ² oscillation form Q-switch pulse repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM (transverse electromagnetic wave) 00 Polarization characteristics Linear polarization (B) Condenser lens magnification 100 times or less NA (numerical aperture, numerical aperture) 0.55 The transmittance to the wavelength of the laser light is 100% or less (C) The moving speed of the stage where the semiconductor substrate is placed is 280 mm/sec or less

Then, as shown in FIG. 10(c), while the semiconductor wafer W is held in the wafer processing tape T3, the semiconductor wafer W is polished from the second surface Wb to be thinned to a specific By this, the semiconductor wafer 30C that can be singulated into a plurality of semiconductor wafers 31 is formed (wafer thinning step).

In the above-mentioned method for manufacturing a semiconductor device, in step A, the semiconductor wafer 30C produced in this way can also be used as a singulated semiconductor wafer instead of the semiconductor wafer 30A, and then proceed with reference to FIGS. 3 to 7 in The steps described above.

11(a) and 11(b) show step B in this embodiment, that is, the first stretching step (cooling stretching step) performed after bonding the semiconductor wafer 30C to the dicing die film 1.

In the cooling and stretching step, the hollow-cylindrical lifting member 43 provided by the stretching device abuts the dicing tape 10 on the lower side of the dicing die bonding film 1 in the figure and is raised, and the semiconductor wafer will be attached The dicing tape 10 of the dicing die bonding film 1 of 30C is stretched in a two-dimensional direction including the diameter direction and the circumferential direction of the semiconductor wafer 30C.

The extension is performed under the condition that a tensile stress in the range of 5-28 MPa, preferably 8-25 MPa, is generated in the dicing tape 10, for example. The temperature condition in the cooling extension step is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C. The extension speed (the speed at which the lifting member 43 is raised) in the cooling extension step is preferably 0.1-400 mm/sec, more preferably 0.3-300 mm/sec. In addition, the extension amount in the cooling extension step is preferably 1-20 mm, more preferably 2-16 mm.

Through this cooling and extension step, the adhesive layer 20 of the dicing die attach film 1 is cut into small pieces of the adhesive layer 21 to obtain the semiconductor wafer 31 of the adhesive layer. Specifically, in the cooling and extending step, cracks are formed in the fragile modified region 30b of the semiconductor wafer 30C, and the semiconductor wafer 31 is singulated. At the same time, in the cooling and stretching step, the deformation in each region of each semiconductor wafer 31 closely contacting the semiconductor wafer 30C in the adhesive layer 20 closely contacting the adhesive layer 12 of the extended dicing tape 10 is suppressed. On the other hand, there is no such deformation suppression effect at the part of the wafer where the cracks are formed in the vertical direction in the figure. In this state, the tensile stress effect of the dicing tape 10 is generated. As a result, in the adhesive layer 20, the crack formation portion between the semiconductor wafers 31 is cut in the vertical direction in the figure.

In addition, in the above-mentioned method of manufacturing a semiconductor device, the dicing die-bonding film 1 can be used to obtain a semiconductor chip with an adhesive layer in the above-mentioned manner, and can also be used when a plurality of semiconductor chips are stacked for three-dimensional mounting. Obtain the use of semiconductor wafer with adhesive layer. Between the semiconductor chips 31 in such three-dimensional mounting, spacers may be interposed together with the adhesive layer 21, or they may not be interposed. [Example]

Hereinafter, the present invention will be described in more detail with examples, but the present invention is not limited by these examples. In addition, Table 1 shows the composition of each monomer component constituting the acrylic polymer P ₂ of the adhesive layer in the Examples and Comparative Examples. Among them, in Table 1, regarding the unit of each numerical value representing the composition of the composition, the numerical value related to the monomer component is the relative "mole", and the numerical value related to each component other than the monomer component is relative to "Parts by mass" of the acrylic polymer P ₂ 100 parts by mass.

Example 1 (Crystal Cutting Tape) In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirring device, 100 mol of 2-ethylhexyl acrylate (2EHA), 2-hydroxyethyl acrylate ( HEA) A mixture of 20 moles, 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent with respect to 100 parts by mass of the total amount of these monomer components, at 61°C under nitrogen Stir under atmosphere for 6 hours (polymerization reaction). Thereby, a polymer solution containing acrylic polymer P ₁ is obtained.

Then, the polymer solution containing the acrylic polymer P ₁ , 2-methacryloxyethyl isocyanate (MOI), and dibutyl tin dilaurate as an addition reaction catalyst The mixture was stirred at 50°C under an air atmosphere for 48 hours (addition reaction). In the reaction solution, the amount of MOI was 16 mol. In addition, the compounding amount of dibutyltin dilaurate in the reaction solution was 0.01 parts by mass with respect to 100 parts by mass of the acrylic polymer P ₁ . By this addition reaction, a polymer solution containing acrylic polymer P ₂ (an acrylic polymer containing structural units derived from an isocyanate compound containing an unsaturated functional group) having a methacrylate group in the side chain is obtained .

Then, to the polymer solution, 0.75 parts by mass of a polyisocyanate compound (trade name "Coronate L"; manufactured by Tosoh Co., Ltd.) and 2 parts by mass relative to 100 parts by mass of the acrylic polymer P ₂ were added A photopolymerization initiator (trade name "Irgacure 127"; manufactured by BASF) is mixed, and toluene is added to the mixture so that the viscosity of the mixture at room temperature becomes 500 mPa·s to dilute the mixture to obtain an adhesive combination.

Then, using an applicator, the adhesive composition was applied to the silicone release treatment surface of the PET separator (thickness 50 μm) with the silicone release treatment surface to form an adhesive composition layer . Then, the composition layer was desolvated by heating for 2 minutes at 120° C. to form an adhesive layer with a thickness of 10 μm on the PET separator.

Then, using a laminating machine, an EVA resin film (thickness 125 μm; manufactured by Nitto Denko Co., Ltd.) as a substrate was bonded to the exposed surface of the adhesive layer at room temperature. The adhered body was then stored at 50°C for 24 hours. The dicing tape of Example 1 was produced in the above manner.

(Adhesive layer) To methyl ethyl ketone, 100 parts by mass of acrylic polymer A ₁ (trade name "TEISANRESIN SG-P3", manufactured by Nagase Chemical Co., Ltd.), solid phenol resin (trade name "MEHC- 7851SS"; solid at 23°C; 12 parts by mass of Minghe Chemical Co., Ltd., and 100 parts by mass of silica filler (trade name "SO-C2"; average particle size of 0.5 μm; manufactured by Admatechs Co., Ltd.) The mixture was mixed, and the concentration was adjusted so that the concentration of the solid content became 18% by mass to obtain an adhesive composition.

Next, using an applicator, apply the adhesive composition on the silicone release treatment surface of the PET separator (thickness 50 μm) with the silicone release treatment surface to form a coating film, and then The coating film was desolvated at 130°C for 2 minutes. In the above manner, an adhesive layer with a thickness of 15 μm in Example 1 was formed on the PET separator.

(Production of slicing wafers) The PET separator was peeled off the dicing tape of Example 1, and then the adhesive layer of Example 1 was attached to the exposed adhesive layer. Use hand rollers for lamination. In this way, the dicing die attach film of Example 1 was produced.

Examples 2 to 33 and Comparative Examples 1 to 4 In the production of the adhesive layer, as shown in Tables 1 to 3, the monomer composition to form the acrylic polymer P ₁ , the amount of MOI and the photopolymerization initiator were changed Except for the type or blending amount of the polyisocyanate compound, the type or blending amount of the polyisocyanate compound, etc., a dicing tape and a dicing die attach film were produced in the same manner as in Example 1.

Furthermore, in Tables 1 to 3, "EA" means ethyl acrylate, "BA" means butyl acrylate, "LMA" means lauryl methacrylate, "2MEA" means 2-methoxyethyl acrylate, ""4HBA" means 4-hydroxybutyl acrylate, "HEMA" means 2-hydroxyethyl methacrylate, "AM" means acrylomorpholine, "Irgacure 2959" means the brand name "Irgacure 2959" (made by BASF), ""Irgacure651" represents the product name "Irgacure 651" (manufactured by BASF), "Irgacure 369" represents the product name "Irgacure 369" (manufactured by BASF), and "Coronate HL" represents the product name "Coronate HL" (Tosoh Corporation) system).

＜Evaluation＞ The following evaluations were performed on the dicing die-bonding films obtained in the examples and comparative examples. The results are shown in the table.

(Pickup suitability) Using the product name "ML300-Integration" (manufactured by Tokyo Precision Co., Ltd.) as a laser processing device, the focus point is aligned with the inside of a 12-inch semiconductor wafer along the lattice (10 mm) ×10 mm) pre-dividing line irradiates laser light to form a modified area inside the semiconductor wafer. The irradiation of laser light is carried out under the following conditions. (A) Laser light laser source Semiconductor laser excitation Nd: YAG laser wavelength 1064 nm Laser spot cross-sectional area 3.14×10 ^-8 cm ² Oscillation form Q-switch pulse repetition frequency 100 kHz Pulse width 30 ns Output 20 μJ/pulse Laser light quality TEM00 40 Polarization characteristics Linear polarized light (B) Condensing lens magnification 50 times NA 0.55 Transmittance to the wavelength of laser light 60% (C) Movement speed of the stage where the semiconductor substrate is placed 100 mm/sec

Regarding the method of forming the modified region 30b on the pre-division line in the semiconductor wafer by laser light irradiation, for example, it is described in detail in Japanese Patent Laid-Open No. 2002-192370, but the laser light irradiation conditions in this embodiment are, for example, Adjust appropriately within the following conditions.

<Laser light irradiation conditions> (A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser wavelength 1064 nm Laser spot cross-sectional area 3.14×10 ^-8 cm ² Oscillation form Q-switch pulse repetition frequency pulse width below 100 kHz 1 μs or less, output laser light quality of 1 mJ or less TEM00 Polarization characteristics Linear polarization (B) Condensing lens magnification 100 times or less NA 0.55 Transmittance to laser light wavelength 100% or less (C) Movement of the stage where the semiconductor substrate is placed Speed below 280 mm/sec

After the modified area is formed inside the semiconductor wafer, the back grinding protective tape is attached to the surface of the semiconductor wafer, and the thickness of the semiconductor wafer is adjusted using a back grinding machine (trade name "DGP8760"; manufactured by DISCO Co., Ltd.) The back side is polished to 30 μm.

The semiconductor wafer and the dicing ring formed with the modified region are attached to the dicing die film obtained in the embodiment and the comparative example. Then, using a die spacer (trade name "DDS2300"; manufactured by DISCO Co., Ltd.), the semiconductor wafer and the adhesive layer were cut. Specifically, first, by cooling the stretching unit, cooling stretching is performed at a temperature of -15°C, a cooling stretching speed (extending speed) of 200 mm/sec, and a stretching amount of 14 mm to cut the semiconductor wafer. Then, the area of the part where the adhesive layer floats from the dicing tape was observed with a microscope (the ratio of the area of the semiconductor wafer of the floating adhesive layer when the area of the entire adhesive layer is set to 100%). After cooling and stretching, it is confirmed that there is no problem with the floating of the semiconductor chip with the severing and die film attached.

After the semiconductor wafer and the adhesive layer are cut, the above-mentioned cooling extension unit is used directly to perform room temperature extension under the conditions of room temperature, extension speed of 1 mm/sec, and extension of 5 mm. Then, using the trade name "Die Bonder SPA-300" (manufactured by Shinkawa Co., Ltd.), the jacking speed was set to 1 mm/sec, the jacking amount was set to 500 μm, the number of pins was set to 5, and 50 Attempt to pick up a semiconductor chip with adhesive film. Then, the case where all 50 can be picked up is regarded as ○, and as long as 1 out of the 50 can not be picked up, the situation is set as × for evaluation. The evaluation results are shown in the table.

(Peel force in T-type peel test before UV curing) For each diced die attach film obtained in the Examples and Comparative Examples, the peeling force between the adhesive layer and the adhesive layer was studied in the following manner. First, a test piece was prepared from each diced wafer. Specifically, a backing tape (trade name "BT-315"; manufactured by Nitto Denko Co., Ltd.) is attached to the adhesive layer side of the die-cut die film, and then the die-cut die with the backing tape Cut a test piece with a width of 50 mm × a length of 120 mm from the film. Next, the test piece was subjected to a T-type peel test using a tensile tester (trade name "Autograph AGS-J"; manufactured by Shimadzu Corporation), and the peel force (N/20 mm) was measured. In this measurement, the temperature condition was set to 23°C, and the peeling speed was set to 300 mm/min. The measurement results are shown in the table.

(Peeling force in T-type peeling test after ultraviolet curing (initial)) For the diced chip adhesive films obtained in the examples and comparative examples, the adhesive layer was irradiated with ultraviolet rays from the side of the EVA substrate. In the ultraviolet irradiation, a high-pressure mercury lamp is used, and the cumulative light intensity of the irradiation is set to 350 mJ/cm ² . Next, the diced wafer stick film after UV irradiation was used, and the peeling force (N/20 mm) was measured in the same manner as in the above-mentioned "Peeling force in the T-peel test before ultraviolet curing". The measurement results are shown in the table.

(Peel strength in T-type peel test after ultraviolet curing (with time)) The diced mucosal films obtained in the examples and comparative examples were stored at 50°C for 1 week. Then, ultraviolet rays are irradiated from the side of the EVA substrate to the adhesive layer in the diced wafer after storage. In the ultraviolet irradiation, a high-pressure mercury lamp is used, and the cumulative light intensity of the irradiation is set to 350 mJ/cm ² . Next, the diced wafer stick film after UV irradiation was used, and the peeling force (N/20 mm) was measured in the same manner as in the above-mentioned "Peeling force in the T-peel test before ultraviolet curing". The measurement results are shown in the table.

(Preservation) The case where the peel force increase rate calculated by the following formula was 30% or less was evaluated as ○, and the case where the peel force increase rate exceeded 30% was evaluated as ×. The results are shown in Table 1. Peel force increase rate (%) = Peel force in T-peel test after ultraviolet curing (time) (N/20 mm)/Peel force in T-peel test after ultraviolet curing (initial) (N/20 mm)×100

[Table 1] (Table 1) Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 Example 11 Example 12 Adhesive layer Acrylic polymer P ₂ 100 100 100 100 100 100 100 100 100 100 100 100 2EHA 100 100 100 100 100 100 75 75 75 - - - EA - - - - - - - - - 50 - - BA - - - - - - - - - 50 - - LMA - - - - - - - - - - - 100 2MEA - - - - - - - - - - 100 - HEA 20 20 20 20 20 20 twenty two twenty two twenty two twenty two 25 - 4HBA - - - - - - - - - - - - HEMA - - - - - - - - - - - 20 AM - - - - - - 25 25 25 - 25 - MOI 16 16 16 16 16 16 15 18 20 18 20 16 Coronate L 0.75 - 1.5 2 3 0.75 2 2 2 2 2 2 Coronate HL - 0.75 - - - - - - - - - - Irgacure 127 2 2 2 2 2 - 2 2 2 2 2 2 Irgacure 2959 - - - - - 2 - - - - - - Irgacure 651 - - - - - - - - - - - - Irgacure 369 - - - - - - - - - - - - Peel force in T-type peel test before UV curing [N/20 mm] 0.8 0.8 0.65 0.58 0.52 0.8 2.4 2.4 2.4 1.6 2.2 2.7 Peel force in T-type peel test after UV curing (initial) [N/20 mm] 0.13 0.13 0.13 0.12 0.11 0.16 0.21 0.18 0.15 0.1 0.1 0.14 Peel force in T-type peel test after UV curing (with time) [N/20 mm] 0.15 0.15 0.15 0.13 0.12 0.18 0.22 0.19 0.16 0.11 0.11 0.15 The increase rate of peeling force [(time-initial)/initial][%] 15.4 15.4 15.4 8.3 9.1 12.5 4.8 5.6 6.7 10.0 10.0 7.1 Pickup suitability 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 Preservability 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇

[Table 2] (Table 2) Example 13 Example 14 Example 15 Example 16 Example 17 Example 18 Example 19 Example 20 Example 21 Example 22 Example 23 Example 24 Adhesive layer Acrylic polymer P ₂ 100 100 100 100 100 100 100 100 100 100 100 100 2EHA 75 75 75 75 100 100 100 100 100 100 75 100 EA - - - - - - - - - - - - BA - - - - - - - - - - - - LMA - - - - - - - - - - - - 2MEA - - - - - - - - - - - - HEA twenty two twenty two twenty two twenty two 20 20 20 20 20 20 twenty two 32 4HBA - - - - - - - - - - - - HEMA - - - - - - - - - - - - AM 20 15 10 5 - - - - - - 25 25 MOI 18 18 18 18 16 16 16 16 16 16 20 25 Coronate L 2 2 2 2 0.2 2 4 4 0.75 0.75 2 1 Coronate HL - - - - - - - - - - - - Irgacure 127 2 2 2 2 2 2 1 2 2 2 2 2 Irgacure 2959 - - - - - 2 1 2 - - - - Irgacure 651 - - - - - - - - - - - - Irgacure 369 - - - - - - - - 1 2 1 - Peel force in T-type peel test before UV curing [N/20 mm] 2.0 1.9 1.7 1.4 1.4 1.0 0.7 0.8 0.8 0.8 2.4 2.6 Peel force in T-type peel test after UV curing (initial) [N/20 mm] 0.16 0.16 0.15 0.15 0.14 0.10 0.10 0.10 0.12 0.12 0.14 0.11 Peel force in T-type peel test after UV curing (with time) [N/20 mm] 0.17 0.17 0.16 0.16 0.15 0.11 0.11 0.11 0.13 0.13 0.15 0.13 The increase rate of peeling force [(time-initial)/initial][%] 6.3 6.3 6.7 6.7 7.1 10.0 10.0 10.0 8.3 8.3 7.1 18.2 Pickup suitability 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 Preservability 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇

[table 3] (table 3) Example 25 Example 26 Example 27 Example 28 Example 29 Example 30 Example 31 Example 32 Example 33 Comparative example 1 Comparative example 2 Comparative example 3 Comparative example 4 Adhesive layer Acrylic polymer P ₂ 100 100 100 100 100 100 100 100 100 100 100 100 100 2EHA 100 60 60 60 60 60 60 75 75 100 100 100 100 EA - - - - - - - - - - - - - BA - - - - - - - - - - - - - LMA - - - - - - - - - - - - - 2MEA - - - - - - - - - - - - - HEA 32 20 40 40 40 40 20 twenty two twenty two 20 20 20 20 4HBA - 20 - - - - 20 - - - - - - HEMA - - - - - - - - - - - - - AM 25 15 15 10 5 25 5 10 4 - - - - MOI 25 32 32 32 32 32 32 19 19 16 16 14 10 Coronate L 2 1 1 1 1 1 1 4 4 0.75 0.75 0.75 0.75 Coronate HL - - - - - - - - - - - - - Irgacure 127 2 2 2 2 2 2 2 2 2 - - - - Irgacure 2959 - - - - - - - - - - - - - Irgacure 651 - - - - - - - - - 2 - 2 2 Irgacure 369 - - - - - - - - - - 2 - - Peel force in T-type peel test before UV curing [N/20 mm] 2.1 2.1 2.8 2.4 2.0 3.4 1.7 1.3 1.0 0.8 0.8 0.8 0.8 Peel force in T-type peel test after UV curing (initial) [N/20 mm] 0.12 0.1 0.09 0.09 0.09 0.13 0.09 0.11 0.1 0.14 0.11 0.16 0.20 Peel force in T-type peel test after UV curing (with time) [N/20 mm] 0.13 0.11 0.10 0.10 0.10 0.15 0.10 0.13 0.11 0.23 0.16 0.23 0.28 The increase rate of peeling force [(time-initial)/initial][%] 8.3 10.0 11.1 11.1 11.1 15.4 11.1 18.2 10.0 64.3 45.5 43.8 40.0 Pickup suitability 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 Preservability 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇

According to the diced mucosal films of Examples 1 to 33, even after storage at 50°C for 1 week, the peeling force after UV curing is relatively small compared to the rate of increase before storage. Therefore, the dicing die attach film of Examples 1 to 33 can achieve good pickup of the semiconductor wafer of the adhesive layer after being cut even after a long time after manufacture.

1: slicing wafer 10: diced tape 11: Substrate 12: Adhesive layer 20: Adhesive layer 21: Adhesive layer 30a: Division slot 30A: Semiconductor wafer 30b: Modified area 30B: Semiconductor wafer split body 30C: Semiconductor wafer 31: Semiconductor wafer 41: ring frame 42: retainer 43: jack up member 44: pin structure 45: Adsorption fixture 51: the body 52: Bonding wire 53: Sealing resin R: irradiation area T1: Tape for wafer processing T1a: Adhesive surface T2: Tape for wafer processing T2a: Adhesive surface T3: Tape for wafer processing T3a: Adhesive surface W: semiconductor wafer Wa: side 1 Wb: side 2

Fig. 1 is a schematic cross-sectional view showing one embodiment of the dicing die bond film of the first invention. FIGS. 2(a) to (d) show a part of the steps in the manufacturing method of the semiconductor device using the dicing die film shown in FIG. 1. Figures 3(a) and (b) show steps following the steps shown in Figure 2. Figures 4(a) to (c) show the steps following the steps shown in Figure 3. Figures 5(a) and (b) show the steps following the steps shown in Figure 4. FIG. 6 shows the steps following the steps shown in FIG. 5. Figures 7(a) to (c) show the steps following the steps shown in Figure 6. FIG. 8 shows a part of the steps in a variation of the manufacturing method of the semiconductor device using the dicing die-bonding film shown in FIG. 1. 9(a) and (b) show part of the steps in a variation of the manufacturing method of the semiconductor device using the dicing die film shown in FIG. 1. FIGS. 10(a) to (c) show some steps in a variation of the manufacturing method of the semiconductor device using the dicing die film shown in FIG. 1. 11(a) and (b) show some steps in a variation of the manufacturing method of the semiconductor device using the dicing die film shown in FIG. 1.

1: slicing wafer

10: diced tape

11: Substrate

12: Adhesive layer

20: Adhesive layer

R: irradiation area

Claims (7)

A dicing die film, comprising: a dicing tape having a laminated structure including a substrate and an adhesive layer; and Adhesive layer, which is peelably attached to the adhesive layer in the dicing tape; and The adhesive layer includes: a polymer containing a first radical polymerizable functional group derived from the radical polymerizable functional group and a first radical polymerizable functional group other than the radical polymerizable functional group while maintaining the radical polymerizability of the radical polymerizable functional group A structural part of a functional group crosslinking agent; and a radical polymerization initiator having a second functional group that can react with the above-mentioned first functional group. The diced die-cutting film of claim 1, wherein the above-mentioned polymer comprises the following structure, that is, a structural unit derived from a monomer component having a third functional group that can react with the above-mentioned first functional group, and is derived from the above-mentioned The structural unit of the monomer component and the structural part derived from the crosslinking agent are bonded by a chemical reaction between the first functional group and the third functional group. A dicing die film, comprising: a dicing tape having a laminated structure including a substrate and an adhesive layer; and Adhesive layer, which is peelably attached to the adhesive layer in the dicing tape; and The adhesive layer includes a polymer that includes a structural part derived from a crosslinking agent having a radical polymerizable functional group and a first functional group other than the radical polymerizable functional group, and is derived from the above crosslinking The radical polymerizable functional group in the structural part of the agent is polymerized by a radical polymerization initiator having a second functional group that can react with the first functional group. As claimed in claim 3, wherein the above-mentioned polymer comprises the following structure, that is, a structural unit derived from a monomer component having a third functional group that can react with the above-mentioned first functional group, and is derived from the above-mentioned The structural unit of the monomer component and the structural part derived from the crosslinking agent are bonded by a chemical reaction between the first functional group and the third functional group. According to claim 1 or 3, the diced die attach film, wherein the second functional group is a hydroxyl group. According to claim 1 or 3, the diced wafer stick film, wherein the first functional group is a functional group that can react with a hydroxyl group. As claimed in claim 1 or 3, wherein the above-mentioned structural part derived from a crosslinking agent having a radical polymerizable functional group and a first functional group other than the radical polymerizable functional group is derived from having ( The structure of the crosslinking agent of meth)acryloyl and isocyanate groups.

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