TWI769242B - Sliced Die Stick Film - Google Patents

Abstract

The present invention provides a semiconductor wafer with an adhesive layer attached to the dicing tape which can be well cut in the expansion step of using a dicing die-bonding film to obtain a semiconductor wafer with an adhesive layer attached. The wafer can achieve good pick-up of the slicing die-bonding film. The dicing die-bonding film of the present invention comprises: a dicing tape having a laminated structure including a base material and an adhesive layer; The elastic modulus of the surface of the agent layer is 0.1-20 MPa when indented at 500 nm by the nano-indentation method at a temperature of 23° C. and a frequency of 100 Hz.

Description

Sliced Die Stick Film

The present invention relates to a slicing and sticking film. More specifically, the present invention relates to a diced die attach film that can be used in the fabrication of semiconductor devices.

In the manufacturing process of a semiconductor device, there is a case where the dicing die-bonding film is used in the process of obtaining a semiconductor wafer having a die-bonding adhesive film having a size equivalent to the wafer size, that is, a semiconductor wafer with a die-attaching adhesive layer. The dicing die-bonding film has a size corresponding to the semiconductor wafer to be processed, for example, a dicing tape including a substrate and an adhesive layer, and a die-bonding film that is releasably adhered to the adhesive layer side (then agent layer). As one of the methods of obtaining a semiconductor wafer with an adhesive layer using a dicing die-bonding film, a method of cutting the die-bonding film by expanding a dicing band in the dicing die-bonding film is known. In the method, a semiconductor wafer is firstly attached to the die-cut adhesive film of the die-cut adhesive film. This semiconductor wafer is processed so that it can be cut|disconnected together with a die-bonding film later, and it can be divided into a plurality of semiconductor wafers, for example. Next, in order to cut the die-bonding film on the dicing tape, the dicing tape of the dicing-die-bonding film is stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer by using an expansion device. In the expansion step, the semiconductor wafer on the die-bonding film is also cut at a position corresponding to the cutting part in the die-bonding film, and the semiconductor wafers on the dicing die-bonding film or the dicing tape are singulated into a plurality of pieces. a semiconductor wafer. Then, in order to widen the distance between the plurality of semiconductor wafers with the die-bonding film attached after being cut on the dicing tape, the expanding step is performed again. Then, for example, after the cleaning step, the pin members of the pickup mechanism are used to lift up each semiconductor wafer together with the die-bonding film of the same size as the wafer from the lower side of the dicing tape, and then carry out the process from the dicing tape. pick up. In this way, a semiconductor wafer with a die-attached film, that is, an adhesive layer, is obtained. The semiconductor wafer to which the adhesive layer is attached is fixed to an adherend such as a mounting substrate by die bonding through the adhesive layer. The following Patent Documents 1 to 3 describe the related technologies of the slicing and die attach films used as described above. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 2007-2173 [Patent Document 2] Japanese Patent Laid-Open No. 2010-177401 [Patent Document 3] Japanese Patent Laid-Open No. 2016-115804 Gazette

[Problems to be Solved by the Invention] FIG. 14 is a schematic cross-sectional view of the prior-type slicing die-bonding film Y. FIG. The dicing die-bonding film Y includes a dicing tape 60 and a die-bonding film 70 . The dicing tape 60 has a laminated structure of a base material 61 and an adhesive layer 62 that exhibits adhesive force. The die-bonding film 70 is adhered to the adhesive layer 62 by the adhesive force of the adhesive layer 62 . The dicing and die-bonding film Y has a disc shape corresponding to the size of the semiconductor wafer used as the processing object or workpiece in the manufacturing process of the semiconductor device, and can be used in the above-mentioned expansion step. For example, as shown in FIG. 15 , the semiconductor wafer 81 is attached to the die-bonding film 70 , and the annular frame 82 is attached to the adhesive layer 62 , and the expansion step is performed in this state. The semiconductor wafer 81 is processed so that a plurality of semiconductor wafers can be singulated, for example. The ring-shaped frame 82 is a frame member that is mechanically contacted by a conveying mechanism such as a conveying arm provided in the expansion device when the workpiece is conveyed in a state of being attached to the dicing and die-bonding film Y. The prior-type dicing die-bonding film Y is designed in such a way that the annular frame 82 can be fixed to the film by the adhesive force of the adhesive layer 62 of the dicing tape 60 . That is, the prior-type dicing die attach film Y has a design to ensure that there is an annular frame attaching region around the die attach film 70 in the adhesive layer 62 of the dicing tape 60 . In this design, the distance between the outer peripheral end 62e of the adhesive layer 62 and the outer peripheral end 70e of the die-bonding film 70 in the in-plane direction of the film is about 10-30 mm. The present invention was conceived in view of the above-mentioned circumstances, and an object of the present invention is to provide an adhesive layer on a dicing tape that can be well protected in the expansion step using a dicing die-bonding film for obtaining a semiconductor wafer to which the adhesive layer is attached. Slitting, and the semiconductor wafer with the adhesive layer attached after the severing can realize the slicing and die-bonding film of good pick-up. [Technical Means for Solving the Problem] In order to achieve the above-mentioned object, the inventors of the present invention have made diligent studies and found that the elastic modulus of the surface of the adhesive layer when indented at 500 nm by the nanoindentation method is within a specific range. In the dicing die-bonding film, in the expansion step, the adhesive layer on the dicing tape can be well cut, and the semiconductor wafer with the adhesive layer attached after the dicing can be picked up well. The present invention has been completed based on these findings. That is, the present invention provides a dicing die-bonding film comprising a dicing tape and an adhesive layer, the dicing tape having a laminated structure including a base material and an adhesive layer, and the adhesive layer being releasably adhered to the dicing die The adhesive layer in the tape has an elastic modulus of 0.1-20 MPa when the surface of the adhesive layer is indented at 500 nm by the nanoindentation method at a temperature of 23°C and a frequency of 100 Hz. The dicing die-bonding film of the present invention includes a dicing tape and an adhesive layer. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive layer is releasably adhered to the adhesive layer in the dicing tape. The elastic modulus of the adhesive layer of the dicing tape is 0.1-20 MPa when the surface of the adhesive layer is indented at 500 nm by the nano-indentation method at a temperature of 23 °C and a frequency of 100 Hz. The dicing die-bonding film of this configuration can be used to obtain a semiconductor wafer with an adhesive layer in the manufacturing process of a semiconductor device. Further, the diced die-bonding film of the present invention can be produced, for example, by a method (layer coating method) in which the composition for forming an adhesive layer is applied on the adhesive layer formed on the separator, and the A process of forming an adhesive layer by curing, or a process of coating an adhesive layer-forming composition on an adhesive layer formed on a substrate and curing it to form an adhesive layer. In the manufacturing process of a semiconductor device, as described above, in order to obtain a semiconductor wafer to which an adhesive layer is attached, an expansion step using a dicing die-bonding film, that is, an expansion step for severing is performed in some cases. In this expansion step, the cutting force needs to be properly applied to the adhesive layer on the dicing tape in the dicing die-bonding film. As described above, when the adhesive layer of the dicing tape in the dicing die-bonding film of the present invention is indented at 500 nm on the surface of the adhesive layer by the nano-indentation method at a temperature of 23° C. and a frequency of 100 Hz The elastic modulus is 0.1 to 20 MPa. The elastic modulus based on the above nanoindentation method means that when the indenter is pressed into the surface of the adhesive layer, including the loading and unloading, the loading load and indentation depth of the indenter are continuously and continuously measured. The elastic modulus obtained from the obtained load load-indentation depth curve. Thus, the elastic modulus based on the above-mentioned nanoindentation method is an index representing the physical properties of the surface of the adhesive layer, which is different from the stretching obtained by the viscoelasticity measurement previously, which is an index representing the physical properties of the entire adhesive layer. Modulus of elasticity such as modulus of elasticity. The elastic modulus of the adhesive layer in the slicing die-bonding film of the present invention based on the nano-indentation method is 0.1 MPa or more, whereby the stress generated during expansion is easily transferred to the adhesive layer, so it can be well By cutting the adhesive layer, the adhesive layer and the adhesive layer can have moderate adhesiveness, and the peeling between the adhesive layer and the adhesive layer can be suppressed in the expansion step. In addition, the elastic modulus based on the nano-indentation method is less than 20 MPa, whereby the adhesive layer in the expansion step is not easily cracked, and the semiconductor wafer with the adhesive layer attached after being cut in the pick-up step can be reduced. The self-adhesive layer was peeled off well, and good pick-up could be realized. Furthermore, when the adhesive layer 12 is the following radiation-curable adhesive layer, it is preferable that the elastic modulus of the adhesive layer 12 after radiation-curing by the nano-indentation method is within the above-mentioned range. In addition, in the dicing die-bonding film of the present invention, the dicing tape or its adhesive layer and the adhesive layer thereon can be designed with substantially the same size in the in-plane direction of the film, so that the adhesive layer not only includes workpiece attachment area and includes the area for frame attachment. For example, the following design can be adopted: in the in-plane direction of the slicing die-bonding film, the outer peripheral end of the adhesive layer is within 1000 μm of each outer peripheral end of the substrate or the adhesive layer of the slicing tape. After the adhesive layer and the adhesive layer are formed by laminating the die-cut adhesive film of the present invention by, for example, the above-mentioned lamination coating method, it can be performed at one time by processing such as a stamping process to form a substrate having a substrate and an adhesive layer. Processing of all crystalline strips for the build-up structure of the agent layer, and processing to form an adhesive layer. In the above-mentioned manufacturing process of the prior-type dicing die-bonding film Y, the processing step (the first processing step) for forming the dicing tape 60 of a specific size and shape and the difference between the processing step for forming the die-bonding film 70 of the specific size and shape. The processing step (second processing step) needs to be divided into independent steps. In the first processing step, for example, for a laminated sheet having a laminate structure of a separator, a base material layer to be formed as the base material 61, and an adhesive layer to be formed as the adhesive layer 62 located between them, The processing of inserting the processing blade up to the separator from the base material layer side was implemented. Thereby, the dicing tape 60 having the laminated structure of the adhesive layer 62 on the separator and the base material 61 is formed on the separator. In the second processing step, for example, for a laminated sheet having a laminate structure of a separator and an adhesive layer to be formed as the die-bonding film 70, processing is performed by inserting a processing blade up to the separator from the adhesive layer side. Thereby, the die-bonding film 70 is formed on the spacer. Then, the dicing tape 60 thus formed by the separate steps is aligned and attached to the die attach film 70 . FIG. 16 shows the pre-cut die-bonding film Y with the spacer 83 covering the surface of the die-bonding film 70 and the surface of the adhesive layer 62 . On the other hand, when the dicing tape or its adhesive layer and the adhesive layer thereon have substantially the same design size in the in-plane direction of the film, the dicing and die-bonding film of the present invention can be obtained by, for example, the above-mentioned lamination coating method. After forming the adhesive layer and the adhesive layer by lamination, a process such as a stamping process to form a cutting tape having a laminated structure of a substrate and an adhesive layer, and to form an adhesive can be performed at one time. Layer processing. The dicing die-bonding film of the present invention is suitable for well cutting the adhesive layer by the expansion step, and is suitable for well picking up the semiconductor wafer with the adhesive layer by the pick-up step, and reduces the number of manufacturing steps. It is also suitable for efficient manufacturing from the viewpoint of controlling the manufacturing cost, and the like. In addition, in the crystal-cut adhesive film of the present invention, the above-mentioned adhesive layer is a radiation-hardening adhesive layer, and in the T-type peel test under the conditions of a temperature of 23° C. and a peeling speed of 300 mm/min, after radiation hardening The peeling force between the adhesive layer and the adhesive layer is preferably 0.06-0.25 N/20 mm. If the peel force in the T-peel test after the radiation curing is 0.06 N/20 mm or more, the adhesiveness between the adhesive layer of the dicing tape and the adhesive layer thereon can be ensured, and the expansion can be further suppressed. In the step, the semiconductor wafer to which the adhesive layer is attached is partially peeled off from the adhesive layer, that is, swelled. If the peeling force in the above-mentioned T-peel test after the above-mentioned radiation curing is 0.25 N/20 mm or less, better pick-up can be achieved in the pick-up step. Furthermore, in the dicing die-bonding film of the present invention, in the T-type peel test under the conditions of temperature 23° C. and peeling speed 300 mm/min, the gap between the above-mentioned adhesive layer before radiation curing and the above-mentioned adhesive layer was The peeling force is preferably 2 N/20 mm or more. If the peeling force in the above T-peel test before the radiation curing is 2 N/20 mm or more, the adhesive layer of the dicing tape can be secured to the surface of the dicing tape when the expansion step is performed without radiation curing. The adhesiveness between the adhesive layers can be further suppressed from being partially peeled off from the adhesive layer in the expansion step, that is, bulging, and the adhesive layer can be cut more favorably. Furthermore, in the dicing die-bonding film of the present invention, the difference between the surface roughness Ra of the surface of the adhesive layer and the surface roughness Ra of the surface of the adhesive layer in the contact surface between the adhesive layer and the adhesive layer Preferably it is 100 nm or less. If the difference in the above-mentioned surface roughness Ra is 100 nm or less, the adhesiveness between the adhesive layer of the dicing tape and the adhesive layer thereon can be further improved, and the semiconductor wafer to which the adhesive layer is attached in the expansion step can be further suppressed. The self-adhesive layer is partially peeled off, that is, raised. Furthermore, in the slicing die-bonding film of the present invention, the adhesive layer preferably contains a first acrylic polymer containing (methyl) derived from an alkyl group having a carbon number of 10 or more. ) structural unit of acrylate and structural unit derived from 2-hydroxyethyl (meth)acrylate. Since the above-mentioned adhesive layer contains the above-mentioned first acrylic polymer, the semiconductor wafer to which the adhesive layer is attached can be more easily peeled off from the adhesive layer of the dicing tape in the pickup step, and better pickup can be achieved. In addition, in the slicing die-bonding film of the present invention, the structural unit derived from (meth)acrylate having an alkyl group having a carbon number of 10 or more in the first acrylic polymer is relative to the (methyl) The molar ratio of the structural unit of 2-hydroxyethyl acrylate is preferably 1-40. There is a tendency for the interaction between the adhesive layer in the crystal strip and the adhesive layer thereon to become stronger as the molar ratio decreases. Therefore, when the molar ratio is 1 or more, the interaction can be suppressed to If it is lower, the semiconductor wafer with the adhesive layer attached in the pick-up step is more likely to be peeled off from the adhesive layer of the dicing tape, and better pick-up can be achieved. In addition, if the molar ratio is 40 or less, the above-mentioned interaction can be maintained to a certain extent, and the adhesiveness between the adhesive layer of the dicing tape and the adhesive layer thereon can be ensured, and the expansion step can be further suppressed. The semiconductor wafer to which the adhesive layer is attached is partially peeled off from the adhesive layer, that is, swelled. In addition, in the crystal-cut adhesive film of the present invention, the first acrylic polymer preferably includes a structural unit derived from an unsaturated functional group-containing isocyanate compound, and the first acrylic polymer is derived from The molar ratio of the structural unit of the unsaturated functional group-containing isocyanate compound to the structural unit derived from 2-hydroxyethyl (meth)acrylate is 0.1 to 2. If the first acrylic polymer includes a structural unit derived from an unsaturated functional group-containing isocyanate compound, and the molar ratio is 0.1 or more, the adhesive layer after radiation curing has elasticity by the nanoindentation method. The tendency for the modulus to increase allows the adhesive layer to be cut more favorably in the expansion step. If the molar ratio is 2 or less, the elastic modulus of the adhesive layer after radiation curing tends to decrease by the nano-indentation method, and the adhesive layer in the expansion step is less likely to be cracked. Furthermore, in the dicing die-bonding film of the present invention, the adhesive force of the adhesive layer to SUS is preferably 0.1-20 N/10 mm under the conditions of a temperature of 23° C., a peeling speed of 300 mm/min, and an angle of 180°. . If the above-mentioned adhesive force is 0.1 N/10 mm or more, when the annular frame is attached to the above-mentioned adhesive layer in the expansion step, the adhesiveness between the adhesive layer and the annular frame can be improved, which can be used in the expansion step. The ring-shaped frame well holds the chip-bonded film of the present invention. If the above-mentioned adhesive force is 20 N/10 mm or less, when the ring-shaped frame is attached to the above-mentioned adhesive layer in the expansion step, the dicing die-bonding film of the present invention is easily peeled off from the ring-shaped frame. In addition, in the dicing die-bonding film of the present invention, the storage elastic modulus of the adhesive layer at 23° C. is preferably 100˜4000 MPa. If the storage elastic modulus is 100 MPa or more, when the annular frame is attached to the adhesive layer in the expansion step, the dicing die-bonding film of the present invention is easily peeled off from the annular frame. If the storage elastic modulus is 4000 MPa or less, when the annular frame is attached to the adhesive layer in the expansion step, the adhesiveness between the adhesive layer and the annular frame can be improved, and the ring can be used in the expansion step. The shape frame well holds the slicing die-bonding film of the present invention. [Effect of the Invention] In the dicing die-bonding film of the present invention, the adhesive layer on the dicing tape can be well cut in the expansion step of using the dicing die-bonding film to obtain a semiconductor wafer with an adhesive layer attached, and The severed semiconductor wafer with the adhesive layer attached enables good pickup.

系化合物、樟腦醌、鹵代酮、醯基膦氧化物、醯基磷酸酯等。作為上述α-酮醇系化合物，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等。作為上述苯乙酮系化合物，例如可列舉：甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-𠰌啉基丙烷-1等。作為上述安息香醚系化合物，例如可列舉：安息香乙醚、安息香異丙醚、茴香偶姻甲醚等。作為上述縮酮系化合物，例如可列舉：苯偶醯二甲基縮酮等。作為上述芳香族磺醯氯系化合物，例如可列舉：2-萘磺醯氯等。作為上述光活性肟系化合物，例如可列舉：1-苯基-1,2-丙烷二酮-2-(O-乙氧基羰基)肟等。作為上述二苯甲酮系化合物，例如可列舉：二苯甲酮、苯甲醯苯甲酸、3,3'-二甲基-4-甲氧基二苯甲酮等。作為上述9-氧硫𠮿

系化合物，例如可列舉：9-氧硫𠮿

、2-氯9-氧硫𠮿

、2-甲基9-氧硫𠮿

、2,4-二甲基9-氧硫𠮿

、異丙基9-氧硫𠮿

、2,4-二氯9-氧硫𠮿

、2,4-二乙基9-氧硫𠮿

、2,4-二異丙基9-氧硫𠮿

等。放射線硬化型黏著劑中之光聚合起始劑之含量相對於基礎聚合物100質量份例如為0.05～20質量份。 上述加熱發泡型黏著劑係含有藉由加熱而發泡或膨脹之成分(發泡劑、熱膨脹性微小球等)之黏著劑。作為上述發泡劑，可列舉各種無機系發泡劑或有機系發泡劑。作為上述無機系發泡劑，例如可列舉：碳酸銨、碳酸氫銨、碳酸氫鈉、亞硝酸銨、硼氫化鈉、疊氮化物類等。作為上述有機系發泡劑，例如可列舉：三氯單氟甲烷、二氯單氟甲烷等氯氟化烷烴，偶氮二異丁腈、偶氮二甲醯胺、偶氮二甲酸鋇等偶氮系化合物，對甲苯磺醯肼、二苯碸-3,3'-二磺醯肼、4,4'-氧基雙(苯磺醯肼)、烯丙基雙(磺醯肼)等肼系化合物，對甲苯磺醯半卡肼、4,4'-氧基雙(苯磺醯半卡肼)等半卡肼系化合物，5-𠰌啉基-1,2,3,4-硫雜三唑等三唑系化合物，N,N'-二亞硝基五亞甲基四胺、N,N'-二甲基-N,N'-二亞硝基對苯二甲醯胺等N-亞硝基系化合物等。作為上述熱膨脹性微小球，例如可列舉將藉由加熱而容易氣化膨脹之物質封入殼體內而構成之微小球。作為上述藉由加熱而容易氣化膨脹之物質，例如可列舉：異丁烷、丙烷、戊烷等。利用凝聚法或界面聚合法等將藉由加熱而容易氣化膨脹之物質封入至成殼物質內，藉此可製作熱膨脹性微小球。作為上述成殼物質，可使用表現出熱熔融性之物質、或能夠於封入物質之熱膨脹作用下破裂之物質。作為此種物質，例如可列舉：偏二氯乙烯-丙烯腈共聚物、聚乙烯醇、聚乙烯醇縮丁醛、聚甲基丙烯酸甲酯、聚丙烯腈、聚偏二氯乙烯、聚碸等。 作為上述黏著力非減弱型黏著劑層，例如可列舉感壓型黏著劑層。再者，感壓型黏著劑層中包含藉由預先對由上文關於黏著力減弱型黏著劑層所記述之放射線硬化型黏著劑所形成之黏著劑層照射放射線使之硬化但仍具有一定黏著力的形態之黏著劑層。作為形成黏著力非減弱型黏著劑層之黏著劑，可使用一種黏著劑，亦可使用兩種以上之黏著劑。又，黏著劑層12可整體為黏著力非減弱型黏著劑層，亦可局部為黏著力非減弱型黏著劑層。例如於黏著劑層12具有單層構造之情形時，可黏著劑層12整體為黏著力非減弱型黏著劑層，亦可黏著劑層12中之特定部位(例如作為環狀框之貼附對象區域的位於中央區域之外側之區域)為黏著力非減弱型黏著劑層，其他部位(例如作為半導體晶圓之貼附對象區域的中央區域)為黏著力減弱型黏著劑層。又，於黏著劑層12具有積層構造之情形時，可積層構造中之全部之黏著劑層均為黏著力非減弱型黏著劑層，亦可積層構造中之一部分之黏著劑層為黏著力非減弱型黏著劑層。 藉由預先對由放射線硬化型黏著劑所形成之黏著劑層照射放射線而硬化之形態之黏著劑層(經放射線照射過之放射線硬化型黏著劑層)即便因放射線照射導致黏著力減弱，亦表現出源於所含有之聚合物成分之黏著性，於切晶步驟等中能夠發揮切晶帶之黏著劑層所需之最低限度之黏著力。於使用經放射線照射過之放射線硬化型黏著劑層之情形時，於黏著劑層12之面擴展方向上，可黏著劑層12整體為經放射線照射過之放射線硬化型黏著劑層，亦可黏著劑層12局部為經放射線照射過之放射線硬化型黏著劑層，其他部分為未經放射線照射之放射線硬化型黏著劑層。 作為形成上述感壓型黏著劑層之黏著劑，可使用公知或慣用之感壓型黏著劑，可較佳地使用以丙烯酸系聚合物作為基礎聚合物之丙烯酸系黏著劑或橡膠系黏著劑。於黏著劑層12含有丙烯酸系聚合物作為感壓型黏著劑之情形時，該丙烯酸系聚合物較佳為包含源自(甲基)丙烯酸酯之結構單元作為質量比率最大之結構單元的聚合物。作為上述丙烯酸系聚合物，可採用例如作為上述黏著劑層可含有之丙烯酸系聚合物所說明之丙烯酸系聚合物(例如第1丙烯酸系聚合物)。 黏著劑層12或形成黏著劑層12之黏著劑除上述各成分以外，亦可調配交聯促進劑、黏著賦予劑、防老化劑、著色劑(顏料、染料等)等公知或慣用之黏著劑層所使用之添加劑。作為上述著色劑，例如可列舉藉由放射線照射而著色之化合物。於含有藉由放射線照射而著色之化合物之情形時，可僅使經放射線照射之部分著色。上述藉由放射線照射而著色之化合物係於放射線照射前為無色或淺色，但藉由放射線照射而變為有色之化合物，例如可列舉隱色染料等。上述藉由放射線照射而著色之化合物之使用量並無特別限定，可適當選擇。 黏著劑層12之厚度並無特別限定，於黏著劑層12為由放射線硬化型黏著劑所形成之黏著劑層之情形時，就取得該黏著劑層12於放射線硬化之前後對接著劑層20之接著力之平衡性之觀點而言，較佳為1～50 μm左右，更佳為2～30 μm，進而較佳為5～25 μm。 (接著劑層) 接著劑層20兼備作為表現出熱硬化性之黏晶用接著劑之功能、及用以保持半導體晶圓等工件與環狀框等框構件之黏著功能。接著劑層20能夠藉由施加拉伸應力而被割斷，從而可施加拉伸應力將其割斷而使用。 接著劑層20及構成接著劑層20之接著劑可包含熱硬化性樹脂與例如作為黏合劑成分之熱塑性樹脂，亦可包含具有能夠與硬化劑反應而生成鍵之熱硬化性官能基之熱塑性樹脂。於構成接著劑層20之接著劑包含具有熱硬化性官能基之熱塑性樹脂之情形時，該接著劑無需包含熱硬化性樹脂(環氧樹脂等)。接著劑層20可具有單層構造，亦可具有多層構造。 作為上述熱塑性樹脂，例如可列舉：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、PET或PBT等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、氟樹脂等。上述熱塑性樹脂可僅使用一種，亦可使用兩種以上。作為上述熱塑性樹脂，較佳為丙烯酸系樹脂，其原因在於離子性雜質較少且耐熱性較高，故容易確保接著劑層20之接合可靠性。 就同時實現接著劑層20於室溫及其附近之溫度下對環狀框之貼附性與防止剝離時之殘渣之觀點而言，接著劑層20較佳為包含玻璃轉移溫度為-10～10℃之聚合物作為熱塑性樹脂之主成分。所謂熱塑性樹脂之主成分係指於熱塑性樹脂成分中占最大質量比率之樹脂成分。 關於聚合物之玻璃轉移溫度，可採用基於下述Fox式所求出之玻璃轉移溫度(理論值)。Fox式係聚合物之玻璃轉移溫度Tg與該聚合物中之各構成單體之均聚物之玻璃轉移溫度Tgi的關係式。於下述Fox式中，Tg表示聚合物之玻璃轉移溫度(℃)，Wi表示構成該聚合物之單體i之重量分率，Tgi表示單體i之均聚物之玻璃轉移溫度(℃)。均聚物之玻璃轉移溫度可採用文獻值，例如於「新高分子文庫7 塗料用合成樹脂入門」(北岡協三 著，高分子刊行會，1995年)或「Acrylic Ester Catalog(1997年版)」(Mitsubishi Rayon股份有限公司)中列舉有各種均聚物之玻璃轉移溫度。另一方面，單體之均聚物之玻璃轉移溫度亦可藉由日本專利特開2007-51271號公報中所具體記載之方法而求出。 Fox式：1/(273＋Tg)＝Σ[Wi/(273＋Tgi)] 上述丙烯酸系樹脂較佳為包含源自含烴基之(甲基)丙烯酸酯之結構單元作為質量比率最大之結構單元。作為該含烴基之(甲基)丙烯酸酯，可列舉例如作為上述黏著劑層可含有之形成丙烯酸系聚合物之含烴基之(甲基)丙烯酸酯所例示之含烴基之(甲基)丙烯酸酯。 上述丙烯酸系樹脂亦可包含源自能夠與含烴基之(甲基)丙烯酸酯共聚合之其他單體成分之結構單元。作為上述其他單體成分，例如可列舉：含羧基之單體、酸酐單體、含羥基之單體、含縮水甘油基之單體、含磺酸基之單體、含磷酸基之單體、丙烯醯胺、丙烯腈等含官能基之單體或各種多官能性單體等，具體而言，可使用作為上述黏著劑層可含有之構成丙烯酸系聚合物之其他單體成分所例示者。 作為上述丙烯酸系樹脂，其中，較佳為具有腈基之丙烯酸系聚合物(有時稱為「第2丙烯酸系聚合物」)。尤佳為黏著劑層12包含第1丙烯酸系聚合物且接著劑層20包含第2丙烯酸系聚合物。藉由黏著劑層12包含第1丙烯酸系聚合物且接著劑層20包含第2丙烯酸系聚合物之構成，不僅確保兩層間具有較高之剪切接著力，且可抑制於兩層間之積層方向上作用之結合性相互作用，因此，可進一步抑制於擴張步驟中附接著劑層之半導體晶片自黏著劑層隆起，且可於拾取步驟中實現更良好之拾取。尤其於藉由上述積層塗佈方法積層形成黏著劑層與接著劑層之情形時，一般而言，該於兩層間之積層方向上作用之結合性之相互作用容易過剩，因此較佳為上述構成。 具有腈基之第2丙烯酸系聚合物較佳為包含源自含腈基之單體之結構單元。作為含腈基之單體，例如可列舉：丙烯腈、甲基丙烯腈、氰基苯乙烯。 於具有腈基之第2丙烯酸系聚合物之紅外線吸收光譜中，源自腈基之2240 cm^-1 附近之波峰(屬於C≡N伸縮振動之吸收峰)之高度相對於源自羰基之1730 cm^-1 附近之波峰(屬於C=O伸縮振動之吸收峰)之高度的比值較佳為0.01以上，更佳為0.015以上，進而較佳為0.02以上。又，上述比值較佳為0.1以下，更佳為0.09以下，進而較佳為0.08以下。即，較佳為將第2丙烯酸系聚合物之腈基相對含量設定為使上述比值處於此種範圍內之程度。若上述比值為0.01以上，則可於拾取步驟中實現更良好之拾取。若上述比值為0.1以下，則可進一步抑制於擴張步驟中經割斷之附接著劑層之半導體晶片自黏著劑層隆起。 於接著劑層20同時包含熱塑性樹脂與熱硬化性樹脂之情形時，作為該熱硬化性樹脂，例如可列舉：環氧樹脂、酚樹脂、胺基樹脂、不飽和聚酯樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂、熱硬化性聚醯亞胺樹脂等。上述熱硬化性樹脂可僅使用一種，亦可使用兩種以上。作為上述熱硬化性樹脂，較佳為環氧樹脂，其原因在於存在可能引起黏晶對象之半導體晶片腐蝕之離子性雜質等之含量較少之傾向。又，作為環氧樹脂之硬化劑，較佳為酚樹脂。 作為上述環氧樹脂，例如可列舉：雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥基苯基甲烷型、四酚基乙烷型、乙內醯脲型、異氰尿酸三縮水甘油酯型、縮水甘油胺型之環氧樹脂等。其中，就與作為硬化劑之酚樹脂之反應性充分且耐熱性優異之方面而言，較佳為酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型環氧樹脂、四酚基乙烷型環氧樹脂。 關於可發揮作為環氧樹脂硬化劑之作用之酚樹脂，例如可列舉：酚醛清漆型酚樹脂、可溶酚醛型酚樹脂、聚對羥基苯乙烯等聚羥基苯乙烯等。作為酚醛清漆型酚樹脂，例如可列舉：苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等。上述酚樹脂可僅使用一種，亦可使用兩種以上。其中，就於用作作為黏晶用接著劑之環氧樹脂之硬化劑之情形時存在可提高該接著劑之連接可靠性之傾向之觀點而言，較佳為苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。 於接著劑層20中，就使環氧樹脂與酚樹脂之硬化反應充分進行之觀點而言，以使該酚樹脂中之羥基相對於環氧樹脂成分中之環氧基1當量而較佳成為0.5～2.0當量、更佳成為0.7～1.5當量的量包含酚樹脂。 於接著劑層20包含熱硬化性樹脂之情形時，就使接著劑層20適當表現出作為熱硬化型接著劑之功能之觀點而言，上述熱硬化性樹脂之含有比率相對於接著劑層20之總質量而較佳為5～60質量%，更佳為10～50質量%。 於接著劑層20包含具有熱硬化性官能基之熱塑性樹脂(例如第2丙烯酸系聚合物)之情形時，作為該熱塑性樹脂，例如可使用含熱硬化性官能基之丙烯酸系樹脂。該含熱硬化性官能基之丙烯酸系樹脂中之丙烯酸系樹脂較佳為包含源自含烴基之(甲基)丙烯酸酯之結構單元作為質量比率最大之結構單元。作為該含烴基之(甲基)丙烯酸酯，例如可列舉作為上述黏著劑層可含有之形成丙烯酸系聚合物之含烴基之(甲基)丙烯酸酯所例示之含烴基之(甲基)丙烯酸酯。另一方面，作為含熱硬化性官能基之丙烯酸系樹脂中之熱硬化性官能基，例如可列舉：縮水甘油基、羧基、羥基、異氰酸基等。其中，較佳為縮水甘油基、羧基。即，作為含熱硬化性官能基之丙烯酸系樹脂，尤佳為含縮水甘油基之丙烯酸系樹脂、含羧基之丙烯酸系樹脂。又，較佳為一併含有含熱硬化性官能基之丙烯酸系樹脂與硬化劑，作為該硬化劑，例如可列舉作為上述黏著劑層12形成用放射線硬化型黏著劑可含有之交聯劑所例示者。於含熱硬化性官能基之丙烯酸系樹脂中之熱硬化性官能基為縮水甘油基之情形時，較佳為使用多酚系化合物作為硬化劑，例如可使用上述各種酚樹脂。 接著劑層20中可含有之第2丙烯酸系聚合物之環氧值較佳為0.05 eq/kg以上，更佳為0.1 eq/kg以上，進而較佳為0.2 eq/kg以上。又，該第2丙烯酸系聚合物之環氧值較佳為1 eq/kg以下，更佳為0.9 eq/kg以下。此種環氧值之第2丙烯酸系聚合物於接著劑層20中之含有比率較佳為5～95質量%，更佳為40～80質量%。 接著劑層20中可含有之第2丙烯酸系聚合物之羧酸值較佳為1 mgKOH/g以上，更佳為3 mgKOH/g以上，進而較佳為5 mgKOH/g以上。又，該第2丙烯酸系聚合物之羧酸值較佳為20 mgKOH/g以下，更佳為18 mgKOH/g以下。此種羧酸值之第2丙烯酸系聚合物於接著劑層20中之含有比率較佳為5～95質量%，更佳為40～80質量%。 對於在以黏晶為目的而進行硬化前之接著劑層20，為了實現一定程度之交聯度，較佳為例如於接著劑層形成用樹脂組合物中調配能夠與接著劑層20可含有之上述樹脂之分子鏈末端之官能基等反應並鍵結之多官能性化合物作為交聯成分。此種構成就提高接著劑層20於高溫下之接著特性之觀點，且就實現接著劑層20於耐熱性上之改善之觀點而言較佳。作為上述交聯成分，例如可列舉多異氰酸酯化合物。作為多異氰酸酯化合物，例如可列舉：甲苯二異氰酸酯、二苯基甲烷二異氰酸酯、對苯二異氰酸酯、1,5-萘二異氰酸酯、多元醇與二異氰酸酯之加成物等。關於接著劑層形成用樹脂組合物中之交聯成分之含量，相對於具有能夠與該交聯成分反應並鍵結之上述官能基之樹脂100質量份，就提高所形成之接著劑層20之凝集力之觀點而言，較佳為0.05質量份以上，就提高所形成之接著劑層20之接著力之觀點而言，較佳為7質量份以下。又，作為上述交聯成分，亦可將環氧樹脂等其他多官能性化合物與多異氰酸酯化合物併用。 接著劑層20中之高分子量成分之含有比率較佳為50～100質量%，更佳為50～80質量%。所謂高分子量成分係指重量平均分子量10000以上之成分。若上述高分子量成分之含有比率為上述範圍內，則就同時實現接著劑層20於室溫及其附近之溫度下對環狀框之貼附性與防止剝離時之殘渣的觀點而言較佳。又，接著劑層20亦可含有23℃下為液狀之液狀樹脂。於接著劑層20含有上述液狀樹脂之情形時，接著劑層20中之該液狀樹脂之含有比率較佳為1～10質量%，更佳為1～5質量%。若上述液狀樹脂之含有比率為上述範圍內，則就同時實現接著劑層20於室溫及其附近之溫度下對下述環狀框之貼附性與防止剝離時之殘渣的觀點而言較佳。 接著劑層20較佳為含有填料。藉由對接著劑層20調配填料，可調整接著劑層20之導電性、或導熱性、彈性模數等物性。作為填料，可列舉無機填料及有機填料，尤佳為無機填料。作為無機填料，例如可列舉：氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶鬚、氮化硼、結晶質二氧化矽、非晶質二氧化矽，此外亦可列舉鋁、金、銀、銅、鎳等金屬單質、或合金、非晶質碳黑、石墨等。填料可具有球狀、針狀、薄片狀等各種形狀。作為上述填料，可僅使用一種，亦可使用兩種以上。就確保接著劑層20於下述冷擴張步驟中對環狀框之貼附性之觀點而言，接著劑層20中之填料含有比率較佳為30質量%以下，更佳為25質量%以下。 上述填料之平均粒徑較佳為0.005～10 μm，更佳為0.005～1 μm。若上述平均粒徑為0.005 μm以上，則對半導體晶圓等被黏著體之潤濕性、接著性進一步提高。若上述平均粒徑為10 μm以下，則可充分發揮為了賦予上述各特性所添加之填料之效果，且可確保耐熱性。再者，填料之平均粒徑可使用例如光度式粒度分佈計(例如商品名「LA-910」，堀場製作所股份有限公司製造)求出。 接著劑層20視需要亦可含有其他成分。作為上述其他成分，例如可列舉：硬化觸媒、阻燃劑、矽烷偶合劑、離子捕捉劑、染料等。作為上述阻燃劑，例如可列舉：三氧化銻、五氧化銻、溴化環氧樹脂等。作為上述矽烷偶合劑，例如可列舉：β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷等。作為上述離子捕捉劑，例如可列舉：水滑石類、氫氧化鉍、含水氧化銻(例如東亞合成股份有限公司製造之「IXE-300」)、特定結構之磷酸鋯(例如東亞合成股份有限公司製造之「IXE-100」)、矽酸鎂(例如協和化學工業股份有限公司製造之「Kyoword 600」)、矽酸鋁(例如協和化學工業股份有限公司製造之「Kyoword 700」)等。亦可使用能夠與金屬離子之間形成錯合物之化合物作為離子捕捉劑。作為此種化合物，例如可列舉：三唑系化合物、四唑系化合物、聯吡啶系化合物。該等之中，就與金屬離子之間所形成之錯合物之穩定性之觀點而言，較佳為三唑系化合物。作為此種三唑系化合物，例如可列舉：1,2,3-苯并三唑、1-{N,N-雙(2-乙基己基)胺基甲基}苯并三唑、羧基苯并三唑、2-(2-羥基-5-甲基苯基)苯并三唑、2-(2-羥基-3,5-二第三丁基苯基)-5-氯苯并三唑、2-(2-羥基-3-第三丁基-5-甲基苯基)-5-氯苯并三唑、2-(2-羥基-3,5-二第三戊基苯基)苯并三唑、2-(2-羥基-5-第三辛基苯基)苯并三唑、6-(2-苯并三唑基)-4-第三辛基-6'-第三丁基-4'-甲基-2,2'-亞甲基雙酚、1-(2',3'-羥基丙基)苯并三唑、1-(1,2-二羧基二乙基)苯并三唑、1-(2-乙基己基胺基甲基)苯并三唑、2,4-二第三戊基-6-{(H-苯并三唑-1-基)甲基}苯酚、2-(2-羥基-5-第三丁基苯基)-2H-苯并三唑、3-[3-(2H-苯并三唑-2-基)-5-(1,1-二甲基乙基)-4-羥基苯基]丙酸C7-C9烷基酯、3-[3-第三丁基-4-羥基-5-(5-氯-2H-苯并三唑-2-基)苯基]丙酸辛酯、3-[3-第三丁基-4-羥基-5-(5-氯-2H-苯并三唑-2-基)苯基]丙酸2-乙基己酯、2-(2H-苯并三唑-2-基)-6-(1-甲基-1-苯基乙基)-4-(1,1,3,3-四甲基丁基)苯酚、2-(2H-苯并三唑-2-基)-4-第三丁基苯酚、2-(2-羥基-5-甲基苯基)苯并三唑、2-(2-羥基-5-第三辛基苯基)苯并三唑、2-(3-第三丁基-2-羥基-5-甲基苯基)-5-氯苯并三唑、2-(2-羥基-3,5-二第三戊基苯基)苯并三唑、2-(2-羥基-3,5-二第三丁基苯基)-5-氯-苯并三唑、2-[2-羥基-3,5-二(1,1-二甲基苄基)苯基]-2H-苯并三唑、2,2'-亞甲基雙[6-(2H-苯并三唑-2-基)-4-(1,1,3,3-四甲基丁基)苯酚]、2-[2-羥基-3,5-雙(α,α-二甲基苄基)苯基]-2H-苯并三唑、3-[3-(2H-苯并三唑-2-基)-5-第三丁基-4-羥基苯基]丙酸甲酯等。又，亦可使用氫醌(quinol)化合物、或羥基蒽醌化合物、多酚化合物等特定之含羥基之化合物作為離子捕捉劑。作為此種含羥基之化合物，具體而言，可列舉：1,2-苯二酚、茜素、蒽絳酚(anthrarufin)、單寧、沒食子酸、沒食子酸甲酯、連苯三酚等。上述其他添加劑可僅使用一種，亦可使用兩種以上。 接著劑層20於溫度23℃、剝離速度300 mm/min、角度180°之條件下對SUS之黏著力較佳為0.1～20 N/10 mm，更佳為0.5～15 N/10 mm，進而較佳為1～12 N/10 mm。若上述黏著力為0.1 N/10 mm以上，則於擴張步驟中於接著劑層20貼附環狀框之情形時，可提高接著劑層20與環狀框之密接性，而於擴張步驟中利用環狀框良好地保持切晶黏晶膜X。若上述黏著力為20 N/10 mm以下，則於擴張步驟中於接著劑層20貼附環狀框之情形時，切晶黏晶膜X容易自環狀框剝離。上述對SUS之黏著力可使用拉伸試驗機(商品名「Autograph AGS-J」，島津製作所股份有限公司製造)測定。供於該試驗之試樣片較佳為寬度50 mm×長度120 mm之尺寸之試驗片。 接著劑層20於23℃下之儲存彈性模數較佳為100～4000 MPa，更佳為300～3000 MPa，進而較佳為500～2000 MPa。若上述儲存彈性模數為100 MPa以上，則於擴張步驟中於接著劑層20貼附環狀框之情形時，切晶黏晶膜X容易自環狀框剝離。若上述儲存彈性模數為4000 MPa以下，則於擴張步驟中於接著劑層20貼附環狀框之情形時，可提高接著劑層20與環狀框之密接性，而於擴張步驟中利用環狀框良好地保持切晶黏晶膜X。上述儲存彈性模數可使用拉伸試驗機(商品名「Autograph AGS-J」，島津製作所股份有限公司製造)測定。供於該試驗之試樣片較佳為寬度50 mm×長度120 mm之尺寸之試驗片。 接著劑層20之厚度(積層體之情形為總厚度)並無特別限定，例如1～200 μm。上限較佳為100 μm，更佳為80 μm。下限較佳為3 μm，更佳為5 μm。 於本實施形態中，於切晶黏晶膜X之面內方向D上，接著劑層20之外周端20e與切晶帶10中之基材11之外周端11e及黏著劑層12之外周端12e相距1000 μm以內、較佳為500 μm以內。即，接著劑層20之外周端20e於膜面內方向D上，其全周位於相對於基材11之外周端11e而言之內側1000 μm至外側1000 μm之間、較佳為內側500 μm至外側500 μm之間，且位於相對於黏著劑層12之外周端12e而言之內側1000 μm至外側1000 μm之間、較佳為內側500 μm至外側500 μm之間。於切晶帶10或其黏著劑層12與其上之接著劑層20在面內方向D上具有實質相同尺寸之該構成中，接著劑層20不僅包含工件貼附用區域且包含框貼附用區域。 於切晶黏晶膜X中，於切晶帶10之黏著劑層12為放射線硬化型黏著劑層之情形時，於溫度23℃、剝離速度300 mm/min之條件下之T型剝離試驗中，放射線硬化後之黏著劑層12與接著劑層20之間之剝離力較佳為0.06～0.25 N/20 mm，更佳為0.1～0.2 N/20 mm。若上述剝離力為0.06 N/20 mm以上，則可確保切晶帶之黏著劑層與其上之接著劑層之間之密接性，而進一步抑制於擴張步驟中附接著劑層之半導體晶片自黏著劑層隆起。若上述剝離力為0.25 N/20 mm以下，則可於拾取步驟中實現更良好之拾取。再者，於本說明書中，所謂「放射線硬化型黏著劑層」係指由上述放射線硬化型黏著劑所形成之黏著劑層，包含具有放射線硬化性之黏著劑層及使該黏著劑層藉由放射線照射而硬化後之黏著劑層(經放射線照射過之放射線硬化型黏著劑層)兩者。 於切晶黏晶膜X中，於溫度23℃、剝離速度300 mm/min之條件下之T型剝離試驗中，放射線硬化前之黏著劑層12與接著劑層20之間之剝離力較佳為2 N/20 mm以上，更佳為3 N/20 mm以上。若上述剝離力為2 N/20 mm以上，則於未進行放射線硬化之狀態下實施擴張步驟之情形時，可確保切晶帶之黏著劑層與其上之接著劑層之間之密接性，而進一步抑制於擴張步驟中附接著劑層之半導體晶片自黏著劑層隆起，且可更良好地割斷接著劑層。又，上述剝離力例如為20 N/20 mm以下，較佳為10 N/20 mm以下。再者，上述所謂「放射線硬化前」係指未對黏著劑層照射放射線使之硬化之狀態，亦包括黏著劑層12並非放射線硬化型黏著劑層之情況。 上述T型剝離試驗係使用拉伸試驗機(商品名「Autograph AGS-J」，島津製作所股份有限公司製造)進行。供於該試驗之試樣片可藉由如下方式製作。首先，於黏著劑層為放射線硬化前且欲獲得放射線硬化後之黏著劑層12之情形時，自切晶黏晶膜X中之基材11側對黏著劑層12照射350 mJ/cm² 之紫外線而使黏著劑層12硬化。繼而，於切晶黏晶膜X之接著劑層20側貼合襯底膠帶(商品名「BT-315」，日東電工股份有限公司製造)後，切出寬度50 mm×長度120 mm之尺寸之試驗片。 於切晶黏晶膜X中，黏著劑層12與接著劑層20之接觸面中之黏著劑層12之表面粗糙度Ra與接著劑層20之表面粗糙度Ra的差，即[(與接著劑層20之接觸面中之黏著劑層12之表面粗糙度Ra)－(與黏著劑層12之接觸面中之接著劑層20之表面粗糙度Ra)]之絕對值較佳為100 nm以下。若上述表面粗糙度Ra之差為100 nm以下，則可進一步提高切晶帶之黏著劑層與其上之接著劑層之間之密接性，可進一步抑制於擴張步驟中附接著劑層之半導體晶片自黏著劑層局部地發生剝離即隆起。再者，關於上述黏著劑層12與接著劑層20之接觸面中之黏著劑層12之表面粗糙度Ra及接著劑層20之表面粗糙度Ra，例如可藉由如下方式獲得：於切晶黏晶膜X中之黏著劑層12與接著劑層20之界面進行剝離，對於黏著劑層12之與接著劑層20積層之側之表面、及接著劑層20之與黏著劑層12積層之側之表面，分別測定表面粗糙度Ra。 切晶黏晶膜X如圖2所示可具有分隔件S。具體而言，可採用各切晶黏晶膜X分別附帶分隔件S之片狀之形態，亦可採用分隔件S呈長條狀而於其上配置複數個切晶黏晶膜X且將該分隔件S捲繞成輥狀之形態。分隔件S係用以被覆切晶黏晶膜X之接著劑層20之表面對其進行保護之元件，於使用切晶黏晶膜X時自該膜剝離。作為分隔件S，例如可列舉：聚對苯二甲酸乙二酯(PET)膜、聚乙烯膜、聚丙烯膜、表面經氟系剝離劑或丙烯酸長鏈烷基酯系剝離劑等剝離劑塗佈之塑膠膜或紙類等。分隔件S之厚度例如為5～200 μm。 作為本發明之切晶黏晶膜之一實施形態的切晶黏晶膜X例如藉由如下方式製造。 首先，如圖3(a)所示，於分隔件S上製作接著劑膜20'。接著劑膜20'係待加工形成為上述接著劑層20之長條狀膜。於製作接著劑膜20'時，首先，製作包含樹脂、填料、硬化觸媒、溶劑等之形成接著劑層20之組合物(接著劑組合物)。繼而，於分隔件上塗佈接著劑組合物而形成接著劑組合物層。作為接著劑組合物之塗佈方法，例如可列舉：輥式塗佈、網版塗佈、凹版塗佈等。繼而，視需要藉由脫溶劑或硬化等使該接著劑組合物層固化。脫溶劑例如於溫度70～160℃、時間1～5分鐘之範圍內進行。藉由如上方式可於分隔件S上製作接著劑膜20'。 繼而，如圖3(b)所示，於接著劑膜20'上積層形成黏著劑層12'。黏著劑層12'係待加工形成為上述黏著劑層12者。於形成黏著劑層12'時，首先，於接著劑膜20'上塗佈包含形成黏著劑層12之黏著劑及溶劑等之形成黏著劑層之組合物(黏著劑組合物)而形成黏著劑組合物層。作為黏著劑組合物之塗佈方法，例如可列舉：輥式塗佈、網版塗佈、凹版塗佈等。繼而，視需要藉由脫溶劑或硬化等使該黏著劑組合物層固化。脫溶劑例如於溫度80～150℃、時間0.5～5分鐘之範圍內進行。藉由此種積層塗佈方法而可形成待加工形成為接著劑層20之接著劑膜20'與待加工形成為黏著劑層12之黏著劑層12'。 繼而，如圖3(c)所示，於黏著劑層12'上壓接基材11'而進行貼合。基材11'係待加工形成為上述基材11者。樹脂製基材11'可藉由壓延製膜法、有機溶劑中之流延法、密閉系統中之吹脹擠出法、T型模頭擠出法、共擠出法、乾式層壓法等製膜方法製作。視需要對製膜後之膜及基材11'實施表面處理。於本步驟中，貼合溫度例如為30～50℃，較佳為35～45℃。貼合壓力(線壓)例如為0.1～20 kgf/cm，較佳為1～10 kgf/cm。藉此，獲得具有分隔件S、接著劑膜20'、黏著劑層12'、及基材11'之積層構造之長條狀積層片體。又，於黏著劑層12如上所述為放射線硬化型黏著劑層之情形時，於與接著劑膜20'貼合後再對黏著劑層12'照射紫外線等放射線時，例如自基材11'側對黏著劑層12'進行紫外線等放射線之照射。該照射量例如為50～500 mJ/cm² ，較佳為100～300 mJ/cm² 。該照射區域例如待形成為與接著劑層20密接之黏著劑層12之區域整體。 繼而，如圖3(d)所示，對於上述積層片體，實施將加工刀自基材11'之側起插入至分隔件S為止之加工(於圖3(d)中，以粗實線模式性地表示切斷部位)。例如一面使積層片體沿一方向F以一定速度移動，一面使以能夠繞與該方向F正交之軸心旋轉之方式配置且於輥表面安裝有衝壓加工用加工刀之附加工刀之旋轉輥(未圖示)的附加工刀之表面以特定之按壓力抵接於積層片體之基材11'側。藉此，一次加工形成切晶帶10(基材11、黏著劑層12)與接著劑層20，而於分隔件S上形成切晶黏晶膜X。此後，如圖3(e)所示，自分隔件S上去除切晶黏晶膜X周圍之材料積層部。 藉由如上方式可製造切晶黏晶膜X。 [半導體裝置之製造方法] 可使用本發明之切晶黏晶膜而製造半導體裝置。具體而言，可藉由下述製造方法製造半導體裝置，該方法包括如下步驟：於本發明之切晶黏晶膜中之上述接著劑層側貼附包含複數個半導體晶片之半導體晶圓之分割體、或能夠單片化成複數個半導體晶片之半導體晶圓(有時稱為「步驟A」)；於相對低溫之條件下擴張本發明之切晶黏晶膜中之切晶帶以至少割斷上述接著劑層而獲得附接著劑層之半導體晶片(有時稱為「步驟B」)；於相對高溫之條件下擴張上述切晶帶以將上述附接著劑層之半導體晶片彼此之間隔擴寬(有時稱為「步驟C」)；及拾取上述附接著劑層之半導體晶片(有時稱為「步驟D」)。圖4～9表示使用本發明之切晶黏晶膜之半導體裝置製造方法之一實施形態。 步驟A中所使用之上述包含複數個半導體晶片之半導體晶圓之分割體、或能夠單片化成複數個半導體晶片之半導體晶圓可藉由如下方式獲得。首先，如圖4(a)及圖4(b)所示，於半導體晶圓W上形成分割槽30a(分割槽形成步驟)。半導體晶圓W具有第1面Wa及第2面Wb。於半導體晶圓W中之第1面Wa側已置入各種半導體元件(未圖示)，且第1面Wa上已形成有該半導體元件所需之配線構造等(未圖示)。繼而，將具有黏著面T1a之晶圓加工用帶T1貼合於半導體晶圓W之第2面Wb側後，於半導體晶圓W保持於晶圓加工用帶T1之狀態下，使用切晶裝置等之旋轉刀片於半導體晶圓W之第1面Wa側形成特定深度之分割槽30a。分割槽30a係用以將半導體晶圓W分離成半導體晶片單元之空隙(於圖4～6中，以粗實線模式性地表示分割槽30a)。 繼而，如圖4(c)所示，進行具有黏著面T2a之晶圓加工用帶T2向半導體晶圓W之第1面Wa側之貼合、與晶圓加工用帶T1自半導體晶圓W之剝離。 繼而，如圖4(d)所示，於半導體晶圓W保持於晶圓加工用帶T2之狀態下，藉由對半導體晶圓W自第2面Wb進行研削加工而使之薄化，直至成為特定厚度(晶圓薄化步驟)。研削加工可使用具備研削磨石之研削加工裝置進行。藉由該晶圓薄化步驟，於本實施形態中，形成能夠單片化成複數個半導體晶片31之半導體晶圓30A。半導體晶圓30A具體而言，該晶圓於第2面Wb側具有將待單片化成複數個半導體晶片31之部位加以連結之部位(連結部)。半導體晶圓30A中之連結部之厚度、即半導體晶圓30A之第2面Wb與分割槽30a之第2面Wb側末端之間的距離例如為1～30 μm，較佳為3～20 μm。 (步驟A) 於步驟A中，於切晶黏晶膜X中之接著劑層20側貼附包含複數個半導體晶片之半導體晶圓之分割體、或能夠單片化成複數個半導體晶片之半導體晶圓。 於步驟A之一實施形態中，如圖5(a)所示，將保持於晶圓加工用帶T2之半導體晶圓30A貼合於切晶黏晶膜X之接著劑層20。此後，如圖5(b)所示，自半導體晶圓30A剝離晶圓加工用帶T2。於切晶黏晶膜X中之黏著劑層12為放射線硬化型黏著劑層之情形時，亦可於將半導體晶圓30A貼合於接著劑層20後再自基材11之側對黏著劑層12照射紫外線等放射線，以此代替切晶黏晶膜X之製造過程中之上述放射線照射。照射量例如為50～500 mJ/cm² ，較佳為100～300 mJ/cm² 。切晶黏晶膜X中進行作為黏著劑層12之黏著力減弱措施之照射的區域(圖1所示之照射區域R)例如為黏著劑層12中之接著劑層20貼合區域內除其周緣部以外之區域。 (步驟B) 於步驟B中，於相對低溫之條件下擴張切晶黏晶膜X中之切晶帶10以至少割斷接著劑層20而獲得附接著劑層之半導體晶片。 於步驟B之一實施形態中，首先，於切晶黏晶膜X中之接著劑層20上貼附環狀框41後，如圖6(a)所示，將附帶半導體晶圓30A之該切晶黏晶膜X固定於擴張裝置之保持具42。 繼而，如圖6(b)所示，進行相對低溫之條件下之第1擴張步驟(冷擴張步驟)，而將半導體晶圓30A單片化成複數個半導體晶片31，且將切晶黏晶膜X之接著劑層20割斷成小片之接著劑層21，從而獲得附接著劑層之半導體晶片31。於冷擴張步驟中，使擴張裝置所具備之中空圓柱形狀之頂起構件43於切晶黏晶膜X之圖中下側抵接於切晶帶10並上升，將貼合有半導體晶圓30A之切晶黏晶膜X之切晶帶10於包含半導體晶圓30A之徑方向及周方向之二維方向上進行拉伸而使之擴張。該擴張係於使切晶帶10產生15～32 MPa、較佳為20～32 MPa之範圍內之拉伸應力的條件下進行。冷擴張步驟中之溫度條件例如為0℃以下，較佳為-20～-5℃，更佳為-15～‑5℃，更佳為-15℃。冷擴張步驟中之擴張速度(頂起構件43之上升速度)較佳為0.1～100 mm/sec。又，冷擴張步驟中之擴張量較佳為3～16 mm。 於步驟B中使用能夠單片化成複數個半導體晶片之半導體晶圓30A之情形時，半導體晶圓30A於較薄且易破裂之部位發生割斷而單片化成半導體晶片31。並且，於步驟B中，切晶帶10產生之拉伸應力於與受到擴張之切晶帶10之黏著劑層12密接之接著劑層20中，發揮於與各半導體晶片31密接之各區域中抑制變形之作用，另一方面，於位於半導體晶片31間之分割槽之圖中垂直方向上之部位，未產生此種變形抑制作用。其結果，接著劑層20於位於半導體晶片31間之分割槽之垂直方向上之部位發生割斷。於藉由擴張而割斷後，如圖6(c)所示，使頂起構件43下降而解除切晶帶10之擴張狀態。 (步驟C) 於步驟C中，於相對高溫之條件下擴張上述切晶帶10以將上述附接著劑層之半導體晶片彼此之間隔擴寬。 於步驟C之一實施形態中，首先，如圖7(a)所示，進行相對高溫之條件下之第2擴張步驟(常溫擴張步驟)，而將附接著劑層之半導體晶片31間之距離(間隔距離)擴寬。於步驟C中，使擴張裝置所具備之中空圓柱形狀之頂起構件43再次上升，而將切晶黏晶膜X之切晶帶10進行擴張。第2擴張步驟中之溫度條件例如為10℃以上，較佳為15～30℃。第2擴張步驟中之擴張速度(頂起構件43之上升速度)例如為0.1～10 mm/sec，較佳為0.3～1 mm/sec。又，第2擴張步驟中之擴張量例如為3～16 mm。於步驟C中，將附接著劑層之半導體晶片31之間隔距離擴寬至在下述拾取步驟中能夠適當地自切晶帶10拾取附接著劑層之半導體晶片31之程度。藉由擴張而擴寬間隔距離後，如圖7(b)所示，使頂起構件43下降而解除切晶帶10之擴張狀態。就抑制切晶帶10上之附接著劑層之半導體晶片31之間隔距離於擴張狀態解除後縮小之觀點而言，較佳為於解除擴張狀態前，對切晶帶10中之較半導體晶片31保持區域而言外側之部分進行加熱而使之收縮。 於步驟C之後，視需要亦可具有清洗步驟，即，使用水等清洗液對附帶附接著劑層之半導體晶片31的切晶帶10中之半導體晶片31側進行清洗。 (步驟D) 於步驟D(拾取步驟)中，拾取經單片化之附接著劑層之半導體晶片。於步驟D之一實施形態中，視需要經過上述清洗步驟後，如圖8所示，自切晶帶10拾取附接著劑層之半導體晶片31。例如於切晶帶10之圖中下側，使拾取機構之銷構件44上升而隔著切晶帶10將拾取對象之附接著劑層之半導體晶片31頂起後，利用吸附治具45進行吸附保持。於拾取步驟中，銷構件44之頂起速度例如為1～100 mm/sec，銷構件44之頂起量例如為50～3000 μm。 上述半導體裝置之製造方法亦可包括步驟A～D以外之其他步驟。例如於一實施形態中，如圖9(a)所示，將所拾取之附接著劑層之半導體晶片31經由接著劑層21而暫時固定於被黏著體51(暫固定步驟)。作為被黏著體51，例如可列舉：引線框架、TAB(Tape Automated Bonding，捲帶式自動接合)膜、配線基板、另外製作之半導體晶片等。接著劑層21於暫時固定時在25℃下對被黏著體51之剪切接著力較佳為0.2 MPa以上，更佳為0.2～10 MPa。接著劑層21之上述剪切接著力為0.2 MPa以上之構成可抑制於下述打線接合步驟中因超音波振動或加熱導致接著劑層21與半導體晶片31或與被黏著體51之接著面處產生剪切變形之情況，而可適當地進行打線接合。又，接著劑層21於暫時固定時在175℃下對被黏著體51之剪切接著力較佳為0.01 MPa以上，更佳為0.01～5 MPa。 繼而，如圖9(b)所示，將半導體晶片31之電極墊(未圖示)與被黏著體51所具有之端子部(未圖示)經由接合線52而電性連接(打線接合步驟)。半導體晶片31之電極墊或被黏著體51之端子部與接合線52之接線可藉由附帶加熱之超音波焊接而實現，且以不會使接著劑層21熱硬化之方式進行。作為接合線52，例如可使用金線、鋁線、銅線等。打線接合時之線加熱溫度例如為80～250℃，較佳為80～220℃。又，其加熱時間為數秒～數分鐘。 繼而，如圖9(c)所示，藉由用以保護被黏著體51上之半導體晶片31或接合線52之密封樹脂53而將半導體晶片31加以密封(密封步驟)。於密封步驟中，接著劑層21進行熱硬化。於密封步驟中，例如藉由使用模具進行之轉注成形技術形成密封樹脂53。作為密封樹脂53之構成材料，例如可使用環氧系樹脂。於密封步驟中，用以形成密封樹脂53之加熱溫度例如為165～185℃，加熱時間例如為60秒～數分鐘。於密封步驟中密封樹脂53未充分硬化之情形時，於密封步驟之後進行用以使密封樹脂53完全硬化之後硬化步驟。於密封步驟中接著劑層21未完全熱硬化之情形時，亦可於後硬化步驟中使接著劑層21與密封樹脂53一起實現完全之熱硬化。於後硬化步驟中，加熱溫度例如為165～185℃，加熱時間例如為0.5～8小時。 於上述實施形態中，如上所述，將附接著劑層之半導體晶片31暫時固定於被黏著體51後，進行打線接合步驟而暫不使接著劑層21完全熱硬化。於上述半導體裝置之製造方法中，亦可代替此種構成，將附接著劑層之半導體晶片31暫時固定於被黏著體51後，先使接著劑層21熱硬化後再進行打線接合步驟。 於上述半導體裝置之製造方法中，作為另一實施形態，亦可進行圖10所示之晶圓薄化步驟代替參照圖4(d)之上述晶圓薄化步驟。參照圖4(c)經過上述過程後，於圖10所示之晶圓薄化步驟中，於半導體晶圓W保持於晶圓加工用帶T2之狀態下，藉由對該晶圓自第2面Wb進行研削加工而使之薄化，直至成為特定厚度，而形成包含複數個半導體晶片31且保持於晶圓加工用帶T2之半導體晶圓分割體30B。於上述晶圓薄化步驟中，可採用如下方法：研削晶圓直至分割槽30a於第2面Wb側露出(第1方法)；亦可採用如下方法：自第2面Wb側研削晶圓直至即將到達分割槽30a，其後，藉由自旋轉磨石向晶圓之按壓力之作用使分割槽30a與第2面Wb之間產生裂痕而形成半導體晶圓分割體30B(第2方法)。根據所採用之方法，適當決定參照圖4(a)及圖4(b)如上所述般所形成之分割槽30a距離第1面Wa之深度。於圖10中，以粗實線模式性地表示經第1方法處理後之分割槽30a、或經第2方法處理後之分割槽30a及其所連接之裂痕。於上述半導體裝置之製造方法中，於步驟A中，可使用藉由如上方式製作之作為半導體晶圓分割體之半導體晶圓分割體30B代替半導體晶圓30A，參照圖5～圖9而進行上述各步驟。 圖11(a)及圖11(b)係表示該實施形態中之步驟B，即，於切晶黏晶膜X貼合半導體晶圓分割體30B後進行之第1擴張步驟(冷擴張步驟)。於該實施形態中之步驟B中，使擴張裝置所具備之中空圓柱形狀之頂起構件43於切晶黏晶膜X之圖中下側抵接於切晶帶10並上升，將貼合有半導體晶圓分割體30B之切晶黏晶膜X之切晶帶10於包含半導體晶圓分割體30B之徑方向及周方向之二維方向上進行拉伸而使之擴張。該擴張係於使切晶帶10產生例如5～28 MPa、較佳為8～25 MPa之範圍內之拉伸應力的條件下進行。冷擴張步驟中之溫度條件例如為0℃以下，較佳為-20～-5℃，更佳為-15～-5℃，進而較佳為-15℃。冷擴張步驟中之擴張速度(頂起構件43之上升速度)較佳為1～400 mm/sec。又，冷擴張步驟中之擴張量較佳為50～200 mm。藉由此冷擴張步驟，將切晶黏晶膜X之接著劑層20割斷成小片之接著劑層21而獲得附接著劑層之半導體晶片31。具體而言，於冷擴張步驟中，切晶帶10產生之拉伸應力於與受到擴張之切晶帶10之黏著劑層12密接之接著劑層20中，發揮於與半導體晶圓分割體30B之各半導體晶片31密接之各區域中抑制變形之作用，另一方面，於位於半導體晶片31間之分割槽30a之圖中垂直方向上之部位，未產生此種變形抑制作用。其結果，接著劑層20於位於半導體晶片31間之分割槽30a之圖中垂直方向上之部位發生割斷。 於上述半導體裝置之製造方法中，作為又一實施形態，亦可使用藉由如下方式製作之半導體晶圓30C代替步驟A中使用之半導體晶圓30A或半導體晶圓分割體30B。 於該實施形態中，如圖12(a)及圖12(b)所示，首先，於半導體晶圓W形成改質區域30b。半導體晶圓W具有第1面Wa及第2面Wb。於半導體晶圓W中之第1面Wa側已置入各種半導體元件(未圖示)，且第1面Wa上已形成有該半導體元件所需之配線構造等(未圖示)。進而，將具有黏著面T3a之晶圓加工用帶T3貼合於半導體晶圓W之第1面Wa側後，於半導體晶圓W保持於晶圓加工用帶T3之狀態下，自晶圓加工用帶T3之相反側對半導體晶圓W沿分割預定線向晶圓內部照射由聚光點聚集而成之雷射光，藉由利用多光子吸收之剝蝕而於半導體晶圓W內形成改質區域30b。改質區域30b係用以將半導體晶圓W分離成半導體晶片單元之脆弱化區域。關於藉由對半導體晶圓照射雷射光而於分割預定線上形成改質區域30b之方法，例如於日本專利特開2002-192370號公報中有詳細記述，該實施形態中之雷射光照射條件例如於以下條件範圍內適當調整。 ＜雷射光照射條件＞ (A)雷射光 雷射光源：半導體雷射激發Nd：YAG雷射 波長：1064 nm 雷射光點截面面積：3.14×10^-8 cm² 振盪形態：Q開關脈衝 反覆頻率：100 kHz以下 脈衝寬度：1 μs以下 輸出：1 mJ以下 雷射光品質：TEM00 偏光特性：直線偏光 (B)聚光用透鏡 倍率：100倍以下 NA(numerical aperture，數值孔徑)：0.55 對雷射光波長之透過率：100%以下 (C)供載置半導體基板之載置台之移動速度：280 mm/sec以下 繼而，如圖12(c)所示，於半導體晶圓W保持於晶圓加工用帶T3之狀態下，藉由對半導體晶圓W自第2面Wb進行研削加工而使之薄化，直至成為特定厚度，藉此形成能夠單片化成複數個半導體晶片31之半導體晶圓30C(晶圓薄化步驟)。於上述半導體裝置之製造方法中，於步驟A中，可使用藉由如上方式製作之半導體晶圓30C代替半導體晶圓30A作為能夠進行單片化之半導體晶圓，參照圖5～圖9而進行上述各步驟。 圖13(a)及圖13(b)係表示該實施形態中之步驟B，即，於切晶黏晶膜X貼合半導體晶圓30C後進行之第1擴張步驟(冷擴張步驟)。於冷擴張步驟中，使擴張裝置所具備之中空圓柱形狀之頂起構件43於切晶黏晶膜X之圖中下側抵接於切晶帶10並上升，將貼合有半導體晶圓30C之切晶黏晶膜X之切晶帶10於包含半導體晶圓30C之徑方向及周方向之二維方向上進行拉伸而使之擴張。該擴張係於使切晶帶10產生例如5～28 MPa、較佳為8～25 MPa之範圍內之拉伸應力的條件下進行。冷擴張步驟中之溫度條件例如為0℃以下，較佳為-20～-5℃，更佳為-15～-5℃，進而較佳為-15℃。冷擴張步驟中之擴張速度(頂起構件43之上升速度)較佳為1～400 mm/sec。又，冷擴張步驟中之擴張量較佳為50～200 mm。藉由此冷擴張步驟，將切晶黏晶膜X之接著劑層20割斷成小片之接著劑層21而獲得附接著劑層之半導體晶片31。具體而言，於冷擴張步驟中，使半導體晶圓30C於脆弱之改質區域30b形成裂痕而單片化成半導體晶片31。並且，於冷擴張步驟中，切晶帶10產生之拉伸應力於與受到擴張之切晶帶10之黏著劑層12密接之接著劑層20中，發揮於與半導體晶圓30C之各半導體晶片31密接之各區域中抑制變形之作用，另一方面，於位於晶圓之裂痕形成部位之圖中垂直方向上之部位，未產生此種變形抑制作用。其結果，接著劑層20於位於半導體晶片31間之裂痕形成部位之圖中垂直方向上之部位發生割斷。 又，於上述半導體裝置之製造方法中，切晶黏晶膜X如上所述可用於獲得附接著劑層之半導體晶片之用途，亦可用於獲得積層複數個半導體晶片進行三維安裝之情形時之附接著劑層之半導體晶片之用途。於此種三維安裝中之半導體晶片31間，可一併介存接著劑層21與間隔件，亦可不介存間隔件。 [實施例] 以下，列舉實施例而更詳細地說明本發明，但本發明並不受該等實施例之任何限定。 實施例1 (接著劑層) 於甲基乙基酮中添加丙烯酸系聚合物A₁ (丙烯酸乙酯、丙烯酸丁酯、丙烯腈、及甲基丙烯酸縮水甘油酯之共聚物，即上述第2丙烯酸系聚合物，重量平均分子量為120萬，玻璃轉移溫度為0℃，環氧值為0.4 eq/kg)54質量份、固態酚樹脂(商品名「MEHC-7851SS」，23℃下固態，明和化成股份有限公司製造)3質量份、液態酚樹脂(商品名「MEH-8000H」，23℃下液狀，明和化成股份有限公司製造)3質量份、及二氧化矽填料(商品名「SO-C2」，平均粒徑為0.5 μm，Admatechs股份有限公司製造)40質量份，加以混合，調整濃度以使室溫下之黏度成為700 mPa・s，而獲得接著劑組合物。繼而，於具有經聚矽氧脫模處理之面之PET分隔件(厚度38 μm)之聚矽氧脫模處理面上，使用敷料器塗佈接著劑組合物而形成塗膜，對該塗膜於130℃下進行2分鐘之脫溶劑。藉由如上方式於PET分隔件上製作實施例1中之厚度10 μm之接著劑層。將實施例1中之接著劑層之組成示於表1(於表1中，除下述關於MOI之數值以外，表示組合物之組成之各數值之單位係該組合物內之相對“質量份”)。 (黏著劑層) 於具備冷卻管、氮氣導入管、溫度計、及攪拌裝置之反應容器內，將包含丙烯酸月桂酯(LA)100莫耳份、丙烯酸2-羥基乙酯(2HEA)20莫耳份、相對於該等單體成分100質量份為0.2質量份之作為聚合起始劑之過氧化苯甲醯、及作為聚合溶劑之甲苯的混合物於氮氣環境中於60℃下攪拌10小時(聚合反應)。藉此，獲得含有丙烯酸系聚合物P₁ 之聚合物溶液。該聚合物溶液中之丙烯酸系聚合物P₁ 其重量平均分子量(Mw)為46萬，玻璃轉移溫度為9.5℃，源自LA之結構單元相對於源自2HEA之結構單元之莫耳比率為5。繼而，將包含該含有丙烯酸系聚合物P₁ 之聚合物溶液、異氰酸2-甲基丙烯醯氧基乙酯(MOI)、及作為加成反應觸媒之二月桂酸二丁基錫的混合物於空氣環境中於室溫下攪拌48小時(加成反應)。於該反應溶液中，MOI之調配量相對於上述丙烯酸月桂酯100莫耳份為16莫耳份，該MOI調配量相對於丙烯酸系聚合物P₁ 中之源自2HEA之結構單元或其羥基總量的莫耳比率為0.8。又，於該反應溶液中，二月桂酸二丁基錫之調配量相對於丙烯酸系聚合物P₁ 100質量份為0.01質量份。藉由該加成反應，獲得含有側鏈具有甲基丙烯酸酯基之丙烯酸系聚合物P₂ (包含源自含不飽和官能基之異氰酸酯化合物之結構單元的上述第1丙烯酸系聚合物)之聚合物溶液。繼而，於該聚合物溶液中添加相對於丙烯酸系聚合物P₂ 100質量份為1質量份之多異氰酸酯化合物(商品名「Coronate L」，Tosoh股份有限公司製造)與2質量份之光聚合起始劑(商品名「Irgacure 127」，BASF公司製造)，加以混合，並對該混合物添加甲苯進行稀釋以使該混合物於室溫下之黏度成為500 mPa・s，而獲得黏著劑組合物。繼而，使用敷料器，於形成於PET分隔件上之上述接著劑層上塗佈黏著劑組合物而形成塗膜，對該塗膜於130℃下進行2分鐘之脫溶劑，而於接著劑層上形成厚度10 μm之黏著劑層。繼而，使用貼合機，於室溫下於該黏著劑層之露出面貼合乙烯-乙酸乙烯酯共聚物(EVA)製基材(商品名「RB-0104」，厚度130 μm，倉敷紡織股份有限公司製造)。繼而，進行將加工刀自EVA基材側插入至分隔件為止之衝壓加工。藉此，於分隔件上形成具有EVA基材/黏著劑層/接著劑層之積層構造之直徑370 mm之圓盤形狀之切晶黏晶膜。繼而，對切晶帶中之黏著劑層自EVA基材側照射紫外線。於照射紫外線時，使用高壓水銀燈，累計照射光量設為350 mJ/cm² 。藉由如上方式製作具有切晶帶(EVA基材/黏著劑層)與接著劑層之積層構造之實施例1之切晶黏晶膜。 實施例2及3 於形成黏著劑層時，將MOI之調配量由16莫耳份變為12莫耳份(實施例2)或8莫耳份(實施例3)，除此以外，藉由與實施例1之切晶黏晶膜相同之方式製作實施例2及3之各切晶黏晶膜。 實施例4 (黏著劑層) 於具備冷卻管、氮氣導入管、溫度計、及攪拌裝置之反應容器內，將包含丙烯酸2-乙基己酯(2EHA)100莫耳份、丙烯酸2-羥基乙酯(2HEA)20莫耳份、相對於該等單體成分100質量份為0.2質量份之作為聚合起始劑之過氧化苯甲醯、及作為聚合溶劑之甲苯的混合物於氮氣環境中於60℃下攪拌10小時(聚合反應)。藉此，獲得含有丙烯酸系聚合物P₃ 之聚合物溶液。該聚合物溶液中之丙烯酸系聚合物P₃ 其重量平均分子量(Mw)為40萬，玻璃轉移溫度為9.5℃，源自2EHA之結構單元相對於源自2HEA之結構單元之莫耳比率為5。繼而，將包含該含有丙烯酸系聚合物P₃ 之聚合物溶液、異氰酸2-甲基丙烯醯氧基乙酯(MOI)、及作為加成反應觸媒之二月桂酸二丁基錫的混合物於空氣環境中於室溫下攪拌48小時(加成反應)。於該反應溶液中，MOI之調配量相對於上述丙烯酸2-乙基己酯100莫耳份為16莫耳份，該MOI調配量相對於丙烯酸系聚合物P₃ 中之源自2HEA之結構單元或其羥基總量的莫耳比率為0.8。又，於該反應溶液中，二月桂酸二丁基錫之調配量相對於丙烯酸系聚合物P₃ 100質量份為0.01質量份。藉由該加成反應，獲得含有側鏈具有甲基丙烯酸酯基之丙烯酸系聚合物P₄ (包含源自含不飽和官能基之異氰酸酯化合物之結構單元的丙烯酸系聚合物)之聚合物溶液。繼而，於該聚合物溶液中添加相對於丙烯酸系聚合物P₄ 100質量份為1質量份之多異氰酸酯化合物(商品名「Coronate L」，Tosoh股份有限公司製造)與2質量份之光聚合起始劑(商品名「Irgacure 127」，BASF公司製造)，進行混合，並對該混合物添加甲苯進行稀釋以使該混合物於室溫下之黏度成為500 mPa・s，而獲得黏著劑組合物。進而，使用該黏著劑組合物作為黏著劑組合物，除此以外，藉由與實施例1之切晶黏晶膜相同之方式製作實施例4之切晶黏晶膜。 實施例5 (黏著劑層) 使用敷料器，於具有經聚矽氧脫模處理之面之PET分隔件(厚度38 μm)之聚矽氧脫模處理面上塗佈實施例4中所製作之黏著劑組合物而形成塗膜，對該塗膜於130℃下進行2分鐘之脫溶劑，而於PET分隔件上形成厚度10 μm之黏著劑層。繼而，使用貼合機，於室溫下於該黏著劑層之露出面貼合乙烯-乙酸乙烯酯共聚物(EVA)製基材(商品名「RB-0104」，厚度130 μm，倉敷紡織股份有限公司製造)。藉由如上方式製作具有EVA基材/黏著劑層之積層構造之切晶帶。 (接著劑層) 自上述切晶帶剝離PET分隔件，於露出之黏著劑層貼合實施例1中所製作之附接著劑層之PET分隔件之接著劑層。於貼合時，將切晶帶之中心與接著劑層之中心進行位置對準。又，使用手動輥進行貼合。繼而，進行將加工刀自EVA基材側插入至分隔件為止之衝壓加工。藉此，於分隔件上形成具有EVA基材/黏著劑層/接著劑層之積層構造之直徑370 mm之圓盤形狀之切晶黏晶膜。繼而，對切晶帶中之黏著劑層自EVA基材側照射紫外線。於照射紫外線時，使用高壓水銀燈，累計照射光量設為350 mJ/cm² 。藉由如上方式製作具有包含切晶帶(EVA基材/黏著劑層)與接著劑層之積層構造之實施例5之切晶黏晶膜。 比較例1 於形成黏著劑層時，將MOI之調配量由16莫耳份變為20莫耳份，除此以外，藉由與實施例4之切晶黏晶膜相同之方式製作比較例1之切晶黏晶膜。 ＜評價＞ 針對實施例及比較例中所獲得之切晶黏晶膜，進行以下之評價。將結果示於表1。 (基於奈米壓痕法之彈性模數) 對於實施例及比較例中分別所獲得之各切晶黏晶膜，自黏著劑層上剝離接著劑層，針對黏著劑層之剝離面，使用奈米壓痕儀(商品名「TriboIndenter」，HYSITRON Inc.公司製造)，於以下之條件下進行黏著劑層表面之奈米壓痕測定。進而，將所獲得之彈性模數示於表1。 使用壓子：Berkovich(三角錐型) 測定方法：單一壓入測定 測定溫度：23℃ 頻率：100 Hz 壓入深度設定：500 nm 荷重：1 mN 負荷速度：0.1 mN/s 除荷速度：0.1 mN/s 保持時間：1 s (表面粗糙度) 對於實施例及比較例中分別所獲得之各切晶黏晶膜，自黏著劑層上剝離接著劑層，針對黏著劑層及接著劑層之剝離面，測定各自之表面粗糙度Ra。再者，表面粗糙度之測定係使用共焦雷射顯微鏡(商品名「OPTELICS H300」，Lasertec股份有限公司製造)進行。進而，將所獲得之各自之表面粗糙度Ra及其差示於表1。 (紫外線硬化後之T型剝離試驗) 針對實施例及比較例中分別所獲得之各切晶黏晶膜，藉由如下方式測定黏著劑層與接著劑層之間之剝離力。首先，由各切晶黏晶膜製作試驗片。具體而言，於切晶黏晶膜之接著劑層側貼合襯底膠帶(商品名「BT-315」，日東電工股份有限公司製造)，自具有該襯底膠帶之切晶黏晶膜切出寬度50 mm×長度120 mm之尺寸之試驗片。進而，使用拉伸試驗機(商品名「Autograph AGS-J」，島津製作所股份有限公司製造)，對試驗片進行T型剝離試驗，測定剝離力(N/20 mm)。於本測定中，溫度條件設為23℃，剝離速度設為300 mm/min。將測定結果示於表1。 (擴張步驟與拾取步驟之實施) 使用實施例及比較例中分別所獲得之各切晶黏晶膜，進行如下之貼合步驟、用以割斷之第1擴張步驟(冷擴張步驟)、用以間隔之第2擴張步驟(常溫擴張步驟)、及拾取步驟。 於貼合步驟中，將保持於晶圓加工用帶(商品名「UB-3083D」，日東電工股份有限公司製造)之半導體晶圓分割體貼合於切晶黏晶膜之接著劑層，其後，自半導體晶圓分割體剝離晶圓加工用帶。於貼合時，使用貼合機，貼合速度設為10 mm/sec，溫度條件設為60℃，壓力條件設為0.15 MPa。又，半導體晶圓分割體係藉由如下方式形成而準備。首先，針對處於與環狀框一起保持於晶圓加工用帶(商品名「V12S-R2-P」，日東電工股份有限公司製造)之狀態的裸晶圓(直徑12英吋，厚度780 μm，東京化工股份有限公司製造)，於其一面之側，使用切晶裝置(商品名「DFD6260」，Disco股份有限公司製造)，利用其旋轉刀片形成單片化用之分割槽(寬度25 μm，深度50 μm，一區塊6 mm×12 mm之格子狀)。繼而，於分割槽形成面貼合晶圓加工用帶(商品名「UB-3083D」，日東電工股份有限公司製造)後，將上述晶圓加工用帶(商品名「V12S-R2-P」)自晶圓剝離。此後，使用背面研磨裝置(商品名「DGP8760」，Disco股份有限公司製造)，自晶圓之另一面(未形成分割槽之面)之側進行研削，藉此將該晶圓薄化至厚度20 μm，繼而，使用同一裝置進行乾式拋光，藉此對該研削面實施鏡面拋光。藉由如上方式形成半導體晶圓分割體(處於保持於晶圓加工用帶之狀態)。該半導體晶圓分割體中包含複數個半導體晶片(6 mm×12 mm)。 冷擴張步驟係使用晶片隔離裝置(商品名「Die Separator DDS3200」，Disco股份有限公司製造)，藉由其冷擴張單元進行。具體而言，首先，於室溫下，於附帶半導體晶圓分割體之上述切晶黏晶膜中之接著劑層之框貼附用區域(工件貼附用區域之周圍)貼附直徑12英吋之SUS製環狀框(Disco股份有限公司製造)。繼而，將該切晶黏晶膜安裝於裝置內，藉由同一裝置之冷擴張單元對附帶半導體晶圓分割體之切晶黏晶膜之切晶帶進行擴張。於該冷擴張步驟中，溫度為-15℃，擴張速度為100 mm/sec，擴張量為7 mm。 常溫擴張步驟係使用晶片隔離裝置(商品名「Die Separator DDS3200」，Disco股份有限公司製造)，藉由其常溫擴張單元進行。具體而言，藉由同一裝置之常溫擴張單元對經過上述冷擴張步驟之附帶半導體晶圓分割體之切晶黏晶膜之切晶帶進行擴張。於該常溫擴張步驟中，溫度為23℃，擴張速度為1 mm/sec，擴張量為10 mm。此後，對經過常溫擴張之切晶黏晶膜實施加熱收縮處理。該處理溫度為200℃，處理時間為20秒。 於拾取步驟中，使用具有拾取機構之裝置(商品名「Die Bonder SPA-300」，新川股份有限公司製造)，嘗試於切晶帶上拾取經單片化之附接著劑層之半導體晶片。關於該拾取，銷構件之頂起速度為1 mm/sec，頂起量為2000 μm，拾取評價數為5個。 於使用實施例及比較例中所獲得之各切晶黏晶膜進行之如上所述之過程中，關於冷擴張步驟，於附接著劑層之半導體晶片自切晶帶之隆起之面積為5%以下之情形時，將割斷時之隆起評價為良(○)，於隆起之面積超過5%且為40%以下之情形時，將割斷時之隆起評價為可(△)。關於拾取步驟，於5個附接著劑層之半導體晶片全部自切晶帶成功拾取之情形時，將拾取性評價為良(○)，於1～4個成功拾取之情形時，將拾取性評價為可(△)，於無一成功拾取之情形時，將拾取性評價為不良(×)。將該等之評價結果示於表1。 [表1]

根據實施例1～4之切晶黏晶膜，於冷擴張步驟中，可良好地割斷接著劑層而不會發生附接著劑層之半導體晶片自切晶帶隆起之情況，並且，於拾取步驟中，可適當地拾取附接著劑層之半導體晶片。[Slicing Die Adhesive Film] The slicing die attach film of the present invention includes a dicing tape having a laminate structure including a substrate and an adhesive layer, and a dicing tape that is releasably adhered to the adhesive layer in the dicing tape. Then the agent layer. Hereinafter, one embodiment of the dicing die-bonding film of the present invention will be described. FIG. 1 is a schematic cross-sectional view showing an embodiment of the slicing die-bonding film of the present invention. As shown in FIG. 1 , the dicing die-bonding film X includes a dicing tape 10 and an adhesive layer 20 laminated on the adhesive layer 12 in the dicing tape 10 , which can be used to obtain an adhesive layer during semiconductor device manufacturing. The expansion step in the process of the semiconductor wafer. In addition, the dicing die-bonding film X has a disk shape of a size corresponding to the semiconductor wafer to be processed in the manufacturing process of the semiconductor device. The diameter of the dicing die-bonding film X is, for example, in the range of 345-380 mm (for 12-inch wafers), 245-280 mm (for 8-inch wafers), and 195-230 mm (6-inch wafer-compatible type), or within the range of 495 to 530 mm (18-inch wafer-compatible type). The dicing tape 10 in the dicing die attach film X has a laminated structure including a substrate 11 and an adhesive layer 12 . (Substrate) The substrate 11 in the dicing tape 10 is an element that functions as a support in the dicing tape 10 or the dicing adhesive film X. As the base material 11, a plastic base material (especially a plastic film) is mentioned, for example. The above-mentioned substrate 11 may be a single layer, or may be a laminate of the same or different types of substrates. Examples of the resin constituting the above-mentioned plastic base material include: low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra-low density polyethylene, random copolymer polypropylene, embedded polyethylene Block copolymerized polypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene-(meth)acrylic acid copolymer, ethylene-(methyl) ) acrylate (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer and other polyolefin resins; polyurethane; polyethylene terephthalate (PET), polyethylene Polyester such as ethylene naphthalate and polybutylene terephthalate (PBT); polycarbonate; polyimide; polyether ether ketone; polyether imide; aromatic polyamide, fully aromatic Polyamides such as polyamides; polyphenylene sulfide; fluororesin; polyvinyl chloride; polyvinylidene chloride; cellulose resin; polysiloxane, etc. From the viewpoint of ensuring that the substrate 11 has good thermal shrinkage, so as to utilize the localized thermal shrinkage of the dicing tape 10 or the substrate 11 to maintain the wafer separation distance achieved by the following room temperature expansion step, the substrate 11 It is preferable to contain ethylene-vinyl acetate copolymer as a main component. In addition, the main component of the base material 11 means the component which occupies the largest mass ratio among the structural components. Only one kind of the above-mentioned resins may be used, or two or more kinds thereof may be used. When the adhesive layer 12 is a radiation-curable adhesive layer as described below, the substrate 11 preferably has radiation permeability. When the base material 11 is a plastic film, the plastic film may not be aligned, or may be aligned in at least one direction (uniaxial direction, biaxial direction, etc.). When aligned in at least one direction, the plastic film can be thermally shrunk in the at least one direction. If it has heat shrinkability, the outer peripheral portion of the semiconductor wafer in the dicing tape 10 can be thermally shrunk, thereby fixing the semiconductor wafers of the singulated adhesive layer in a state where the space between the semiconductor wafers with the adhesive layer is widened. Therefore, the pickup of the semiconductor wafer can be easily performed. In terms of imparting isotropic heat shrinkability to the base material 11 and the dicing tape 10, the base material 11 is preferably a biaxially oriented film. Furthermore, the above-mentioned plastic film aligned in at least one direction can be obtained by extending a non-stretched plastic film along the at least one direction (uniaxial stretching, biaxial stretching, etc.). The thermal shrinkage rate in the heat treatment test of the substrate 11 and the dicing tape 10 under the conditions of a heating temperature of 100° C. and a heating time of 60 seconds is preferably 1-30%, more preferably 2-25%, and more Preferably, it is 3 to 20%, and more preferably, it is 5 to 20%. It is preferable that the said heat shrinkage rate is the heat shrinkage rate of at least one of MD direction and TD direction. Physical treatments such as corona discharge treatment, plasma treatment, sandblasting treatment, ozone exposure treatment, flame exposure treatment, high voltage electric shock exposure treatment, ionizing radiation treatment, etc. Chemical treatment such as treatment, and surface treatment such as easy-bonding treatment using a coating agent (primer) are used to improve adhesion, retention, and the like with the adhesive layer 12 . In addition, a conductive vapor deposition layer including metals, alloys, oxides of these, etc. can also be provided on the surface of the base material 11 to impart antistatic ability. The surface treatment for improving the adhesiveness is preferably performed on the entire surface of the base material 11 on the side of the adhesive layer 12 . The thickness of the substrate 11 is preferably 40 μm or more, more preferably 50 μm or more, from the viewpoint of ensuring the strength required for the substrate 11 to function as a support in the dicing tape 10 or the dicing adhesive film X , more preferably 55 μm or more, particularly preferably 60 μm or more. In addition, from the viewpoint of realizing moderate flexibility of the dicing tape 10 or the dicing die attach film X, the thickness of the substrate 11 is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 μm or less. μm or less. (Adhesive Layer) As described above, when the adhesive layer 12 in the slicing die-attached film X is indented with 500 nm on the surface 12a of the adhesive layer by the nano-indentation method under the conditions of a temperature of 23° C. and a frequency of 100 Hz The elastic modulus is 0.1-20 MPa, preferably 0.5-15 MPa, more preferably 1-10 MPa. When the elastic modulus is 0.1 MPa or more by the above-mentioned nano-indentation method, the stress generated during expansion is easily transferred to the adhesive layer, so that the adhesive layer can be cut well, and the adhesive layer and the adhesive layer can be separated. It has moderate adhesiveness and can suppress peeling between the adhesive layer and the adhesive layer in the expansion step. In addition, because the elastic modulus based on the above-mentioned nano-indentation method is 20 MPa or less, the adhesive layer in the expansion step is not easily cracked, and the semiconductor wafer with the adhesive layer attached after being cut in the pick-up step can be freed from The adhesive layer was peeled off well, and good pickup could be achieved. The elastic modulus based on the above nanoindentation method means that when the indenter is pressed into the surface of the adhesive layer, including the loading and unloading, the loading load and indentation depth of the indenter are continuously and continuously measured. The elastic modulus obtained from the obtained load load-indentation depth curve. That is, the elastic modulus based on the above-mentioned nanoindentation method is an index indicating the physical properties of the surface of the adhesive layer, which is different from the stretching obtained by the viscoelasticity measurement, which is an index indicating the physical properties of the entire adhesive layer. Modulus of elasticity such as modulus of elasticity. The elastic modulus of the above-mentioned adhesive layer based on the nanoindentation method is the elasticity obtained by the nanoindentation test under the conditions of load: 1 mN, loading/unloading speed: 0.1 mN/s, holding time: 1 s modulus. The adhesive layer 12 of the dicing tape 10 preferably contains an acrylic polymer as a base polymer. The said acrylic polymer is a polymer which contains the structural unit derived from an acrylic monomer (monomer component which has a (meth)acryloyl group in a molecule|numerator) as a structural unit of a polymer. The above-mentioned acrylic polymer is preferably a polymer containing a (meth)acrylate-derived structural unit at the maximum mass ratio. In addition, only one type of acrylic polymer may be used, or two or more types may be used. In addition, in this specification, "(meth)acrylic acid" means "acrylic acid" and/or "(methacrylic acid" (either or both of "acrylic acid" and "methacrylic acid"), and other The same. Examples of the above-mentioned (meth)acrylate include hydrocarbon group-containing (meth)acrylates. Examples of hydrocarbon group-containing (meth)acrylates include alkyl (meth)acrylates, (meth)acrylates ) Hydrocarbon group-containing (meth)acrylates such as cycloalkyl acrylate, aryl (meth)acrylate, etc. Examples of the alkyl (meth)acrylate include methyl (meth)acrylate, Ethyl, propyl, isopropyl, butyl, isobutyl, 2-butyl, 3-butyl, amyl, isoamyl, hexyl, heptyl, octyl, 2-ethylhexyl, Isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl (lauryl), tridecyl, tetradecyl, hexadecyl, octadecyl Alkyl esters, eicosyl esters, etc. As the above-mentioned cycloalkyl esters of (meth)acrylic acid, for example, cyclopentyl (meth)acrylic acid, cyclohexyl esters, etc. can be mentioned. As the above-mentioned (meth)acrylic acid aromatic Examples of the base ester include phenyl (meth)acrylic acid and benzyl ester. As the above-mentioned hydrocarbon group-containing (meth)acrylate, alkyl (meth)acrylate is preferred, and carbon number is more preferred. (Meth)acrylate having an alkyl group of 10 or more. That is, the above-mentioned acrylic polymer preferably contains a structural unit derived from a (meth)acrylate having an alkyl group having a carbon number of 10 or more. The above-mentioned hydrocarbon group-containing ((meth)acrylate) Only one kind of meth)acrylate may be used, or two or more kinds may be used. Examples of the (meth)acrylate having an alkyl group having at least 10 carbon atoms include decyl (meth)acrylate, (meth)acrylate ) Isodecyl acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate (lauryl (meth)acrylate), tridecyl (meth)acrylate, (meth)acrylate Alkane having 10 to 25 carbon atoms, such as tetradecyl acrylate, hexadecyl (meth)acrylate, octadecyl (meth)acrylate, eicosyl (meth)acrylate, etc. (Meth)acrylate of a group (C _10-25 alkyl group). Among them, lauryl (meth)acrylate is preferred. The adhesive layer 12 can appropriately exhibit a (meth)acrylate derived from a hydrocarbon group-containing (meth)acrylate. In terms of basic properties such as adhesiveness, hydrocarbon group-containing (meth)acrylates (especially (meth)acrylates having an alkyl group with a carbon number of 10 or more) in all monomer components used to form acrylic polymers The ratio of acrylic acid ester) is preferably 40% by mass or more, more preferably 60% by mass or more. The above-mentioned acrylic polymer may also contain part of other monomer components that can be copolymerized with the hydrocarbon group-containing (meth)acrylate. Structural unit to improve cohesion, heat resistance, etc. As the above-mentioned other monomer components, for example, carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, and glycidyl group-containing monomers can be listed. , sulfonic acid group-containing monomer, phosphoric acid group-containing monomer, acrylamide, acrylonitrile and other functional group-containing monomers, etc. As the above-mentioned carboxyl group-containing monomer, For example, acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itonic acid, maleic acid, fumaric acid, crotonic acid, etc. are mentioned. As said acid anhydride monomer, maleic anhydride, itaconic anhydride, etc. are mentioned, for example. Examples of the above-mentioned hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and (meth)acrylic acid. 6-Hydroxyhexyl, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (4-hydroxymethyl) (meth)acrylate cyclohexyl) methyl ester, etc. As said glycidyl group-containing monomer, glycidyl (meth)acrylate, methyl glycidyl (meth)acrylate, etc. are mentioned, for example. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamido-2-methylpropanesulfonic acid, and (meth)acrylamidosulfonic acid Propanesulfonic acid, sulfopropyl (meth)acrylate, (meth)acryloyloxynaphthalenesulfonic acid, etc. As said phosphoric acid group containing monomer, acrylyl phosphate 2-hydroxyethyl etc. are mentioned, for example. Among the other monomer components, a hydroxyl group-containing monomer is preferable, and 2-hydroxyethyl (meth)acrylate is more preferable. That is, it is preferable that the said acrylic polymer contains the structural unit derived from 2-hydroxyethyl (meth)acrylate. Only one type of the above-mentioned other monomer components may be used, or two or more types may be used. In terms of making the adhesive layer 12 appropriately exhibit basic properties such as adhesiveness derived from the hydrocarbon group-containing (meth)acrylate, the above-mentioned other monomer components among all the monomer components used to form the acrylic polymer The ratio (especially 2-hydroxyethyl (meth)acrylate) is preferably 60 mass % or less, more preferably 40 mass % or less. The above-mentioned acrylic polymer is preferably an acrylic polymer including at least a structural unit derived from a (meth)acrylate having an alkyl group having 10 or more carbon atoms and a structural unit derived from 2-hydroxyethyl (meth)acrylate (sometimes referred to as "first acrylic polymer"). That is, it is preferable that the adhesive layer 12 contains at least a second structural unit including a structural unit derived from a (meth)acrylate having an alkyl group having 10 or more carbon atoms and a structural unit derived from 2-hydroxyethyl (meth)acrylate. 1 Acrylic polymer. If the adhesive layer 12 contains the above-mentioned first acrylic polymer, the semiconductor wafer to which the adhesive layer is attached is more likely to be peeled off from the adhesive layer of the dicing tape in the pickup step, and better pickup can be achieved. Molar ratio of the structural unit derived from (meth)acrylate having an alkyl group having 10 or more carbon atoms in the first acrylic polymer with respect to the structural unit derived from 2-hydroxyethyl (meth)acrylate Preferably it is 1 or more, More preferably, it is 3 or more, More preferably, it is 5 or more. Moreover, the said molar ratio becomes like this. Preferably it is 40 or less, More preferably, it is 35 or less, More preferably, it is 30 or less. There is a tendency that as the molar ratio decreases, the interaction between the adhesive layer in the crystal strip and the adhesive layer thereon becomes stronger. Therefore, if the molar ratio is 1 or more, the interaction can be suppressed to If it is lower, the semiconductor wafer with the adhesive layer attached in the pick-up step is more likely to be peeled off from the adhesive layer of the dicing tape, and better pick-up can be achieved. In addition, if the molar ratio is 40 or less, the above-mentioned interaction can be maintained to a certain extent, and the adhesiveness between the adhesive layer of the dicing tape and the adhesive layer thereon can be ensured, and the expansion step can be further suppressed. The semiconductor wafer to which the adhesive layer is attached is partially peeled off from the adhesive layer, that is, swelled. The above-mentioned acrylic polymer including the first acrylic polymer may also include a structural unit derived from a polyfunctional monomer capable of copolymerizing with the monomer component forming the acrylic polymer to form a crossover in the polymer backbone thereof. link structure. As said polyfunctional monomer, for example, hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, new Pentylene glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate esters, epoxy (meth)acrylates (such as poly(glycidyl(meth)acrylate), polyester (meth)acrylates, urethane (meth)acrylates, etc.) with (methyl) in the molecule Monomers of acrylyl and other reactive functional groups, etc. Only one type of the above-mentioned polyfunctional monomer may be used, or two or more types may be used. In terms of making the adhesive layer 12 appropriately exhibit basic properties such as adhesiveness derived from the hydrocarbon group-containing (meth)acrylate, the above-mentioned polyfunctional monomers among all the monomer components used to form the acrylic polymer are The volume ratio is preferably 40 mass % or less, more preferably 30 mass % or less. The acrylic polymer can be obtained by polymerizing one or more monomer components including an acrylic monomer. As a polymerization method, solution polymerization, emulsion polymerization, block polymerization, suspension polymerization, etc. are mentioned. The number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000. If the number-average molecular weight is 100,000 or more, there is a tendency that low molecular weight substances in the adhesive layer are less, and contamination of the adhesive layer or the semiconductor wafer can be further suppressed. The adhesive layer 12 or the adhesive forming the adhesive layer 12 may contain a crosslinking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be crosslinked to further reduce the low molecular weight substances in the adhesive layer 12 . In addition, the number average molecular weight of the acrylic polymer can be increased. As said crosslinking agent, a polyisocyanate compound, an epoxy compound, a polyol compound (polyphenol type compound etc.), an aziridine compound, a melamine compound etc. are mentioned, for example. When a crosslinking agent is used, its usage amount is preferably about 5 parts by mass or less with respect to 100 parts by mass of the base polymer, more preferably 0.1 to 5 parts by mass. The adhesive layer 12 may be an adhesive layer (adhesive layer with reduced adhesive force) whose adhesive force can be deliberately weakened by external action such as radiation irradiation or heating, or may be an adhesive layer with little or no adhesive force due to external action. The weakened adhesive layer (adhesive layer with non-weakened adhesive force) can be appropriately selected according to the method or conditions of singulation of the semiconductor wafer singulated using the dicing die-bonding film X. In the case where the adhesive layer 12 is an adhesive layer with reduced adhesive force, the state of the adhesive layer 12 to show a relatively high adhesive force can be flexibly used during the manufacturing process or the use process of the die-cut adhesive film X. A state showing relatively low adhesion. For example, when the adhesive layer 12 of the dicing tape 10 is attached to the adhesive layer 20 during the manufacturing process of the dicing die-bonding film X, or when the dicing die-bonding film X is used in the dicing step, the adhesive layer 12 is used. The state of relatively high adhesive force can suppress and prevent the adherend such as the adhesive layer 20 from rising from the adhesive layer 12. On the other hand, it is used for the subsequent dicing of the self-dicing die-bonding film X. In the pickup step in which the tape 10 picks up the semiconductor wafer with the adhesive layer attached, the pickup can be easily performed by weakening the adhesive force of the adhesive layer 12 . As an adhesive which forms such an adhesive force weakening type adhesive layer, a radiation hardening type adhesive agent, a heating foaming type adhesive agent, etc. are mentioned, for example. As the adhesive for forming the adhesive layer with reduced adhesive force, one type of adhesive may be used, or two or more types of adhesive may be used. As the above-mentioned radiation-curable adhesive, for example, those hardened by irradiation with electron beams, ultraviolet rays, alpha rays, beta rays, gamma rays, or X rays can be used, and those hardened by irradiation with ultraviolet rays can be preferably used. Type of adhesive (UV-curable adhesive). Examples of the radiation curable adhesive include the addition of a base polymer such as the above-mentioned acrylic polymer, and a radiation polymerizable monomer component or oligomer component having functional groups such as radiation polymerizable carbon-carbon double bonds. Type of radiation hardening adhesive. As said radiation polymerizable monomer component, (meth)acrylate urethane, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, for example base) acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, and the like. Examples of the radiation polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers. Preferably, the molecular weight is 100 to 30,000 or so. The content of the radiation-curable monomer component and oligomer component in the radiation-curable adhesive that forms the adhesive layer 12 is, for example, 5 to 500 parts by mass, preferably 40 to 500 parts by mass relative to 100 parts by mass of the base polymer. About 150 parts by mass. Moreover, as an additive type radiation-curable adhesive agent, what is disclosed in Unexamined-Japanese-Patent No. 60-196956 can be used, for example. Examples of the radiation-curable adhesive include an intrinsic type of a base polymer containing functional groups such as radiation-polymerizable carbon-carbon double bonds in the polymer side chain or in the polymer main chain and at the end of the polymer main chain. The radiation hardening adhesive. When such an intrinsic radiation-curable adhesive is used, it is possible to suppress unintended changes over time in the adhesive properties due to the movement of low molecular weight components in the formed adhesive layer 12 . As a base polymer contained in the said intrinsic radiation-curable adhesive agent, an acrylic polymer (especially the said 1st acrylic polymer) is preferable. As a method of introducing a radiation polymerizable carbon-carbon double bond into an acrylic polymer, for example, a method of polymerizing (copolymerizing) a raw material monomer including a monomer component having a first functional group to obtain an acrylic polymer can be exemplified. Then, in a state where the radiation polymerizability of the carbon-carbon double bond is maintained, the acrylic polymer and the compound having the second functional group that can react with the first functional group and the radiation polymerizable carbon-carbon double bond are subjected to Condensation or addition reaction. Examples of the combination of the first functional group and the second functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridine group, an aziridine group and a carboxyl group, and a hydroxyl group and an isocyanate group. groups, isocyanate groups and hydroxyl groups. Among these, the combination of a hydroxyl group and an isocyanato group, and the combination of an isocyanato group and a hydroxyl group are preferable from the viewpoint of easy reaction tracing. Among them, it is technically difficult to produce a polymer having an isocyanate group with high reactivity. On the other hand, an acrylic polymer having a hydroxyl group is easy to produce and obtain. From this point of view, the above-mentioned first functional The group is a combination of a hydroxyl group and the above-mentioned second functional group is an isocyanate group. In this case, as a compound having an isocyanate group and a radiation polymerizable carbon-carbon double bond, that is, a radiation polymerizable unsaturated functional group-containing isocyanate compound, for example, methacryloyl isocyanate, isocyanate 2-Methacryloyloxyethyl ester, m-isopropenyl-α,α-dimethylbenzyl isocyanate, etc. Moreover, examples of the acrylic polymer having a hydroxyl group include those derived from the aforementioned hydroxyl group-containing monomers, or derived from 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, and the like. The structural unit of ether compounds. When the first acrylic polymer has a structural unit derived from the unsaturated functional group-containing isocyanate compound, the structural unit derived from the unsaturated functional group-containing isocyanate compound in the first acrylic polymer is relative to the structural unit derived from the unsaturated functional group-containing isocyanate compound. The molar ratio of the structural unit of 2-hydroxyethyl (meth)acrylate is preferably 0.1 or more, more preferably 0.2 or more, and still more preferably 0.3 or more. Moreover, the said molar ratio becomes like this. Preferably it is 2 or less, More preferably, it is 1.5 or less, More preferably, it is 1 or less. If the molar ratio is 0.1 or more, the elastic modulus of the adhesive layer after radiation curing tends to increase by the nano-indentation method, and the adhesive layer can be cut more favorably in the expansion step. If the molar ratio is 2 or less, the elastic modulus of the adhesive layer after radiation curing tends to decrease by the nano-indentation method, and the adhesive layer in the expansion step is less likely to be cracked. It is preferable that the said radiation curable adhesive contains a photopolymerization initiator. Examples of the above-mentioned photopolymerization initiator include α-ketol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, aromatic sulfonyl chloride-based compounds, photoactive oxime-based compounds, Benzophenone compounds, 9-oxysulfur 𠮿

Series compounds, camphorquinone, halogenated ketones, acylphosphine oxides, acyl phosphates, etc. As said α-ketoalcohol-type compound, 4-(2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α,α'-dimethylbenzene, for example Ethanone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone, etc. Examples of the acetophenone-based compound include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2- Methyl-1-[4-(methylthio)-phenyl]-2-𠰌olinylpropane-1 and the like. As said benzoin ether type compound, benzoin ether, benzoin isopropyl ether, anisin methyl ether, etc. are mentioned, for example. As said ketal type compound, benzalkonium dimethyl ketal etc. are mentioned, for example. As said aromatic sulfonyl chloride-type compound, 2-naphthalenesulfonyl chloride etc. are mentioned, for example. As said photoactive oxime type compound, 1-phenyl- 1, 2- propanedione- 2-(O-ethoxycarbonyl) oxime etc. are mentioned, for example. As said benzophenone type-compound, benzophenone, benzoylbenzoic acid, 3,3'- dimethyl- 4-methoxy benzophenone etc. are mentioned, for example. As the above-mentioned 9-oxosulfur 𠮿

series compounds, for example: 9-oxothiocyanate

, 2-chloro-9-oxysulfur

, 2-methyl 9-oxothio

, 2,4-dimethyl 9-oxothio

, isopropyl 9-oxothioate

, 2,4-dichloro-9-oxosulfur

, 2,4-diethyl 9-oxothio

, 2,4-diisopropyl 9-oxothio

Wait. The content of the photopolymerization initiator in the radiation-curable adhesive is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer. The above-mentioned heating foamable adhesive is an adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands by heating. As said foaming agent, various inorganic foaming agents and organic foaming agents are mentioned. As said inorganic foaming agent, ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, azides, etc. are mentioned, for example. Examples of the organic foaming agent include chlorofluoroalkanes such as trichloromonofluoromethane and dichloromonofluoromethane, azobisisobutyronitrile, azodimethylamide, barium azodicarboxylate, and the like. Nitrogen compounds, hydrazine such as p-toluenesulfohydrazine, diphenyl-3,3'-disulfohydrazine, 4,4'-oxybis(benzenesulfohydrazine), allylbis(sulfohydrazine), etc. Series compounds, p-toluenesulfonic acid hemicarbazine, 4,4'-oxybis (benzenesulfonic acid hemicarbazide) and other semi-carbazines, 5-𠰌linyl-1,2,3,4-thia Triazole-based compounds such as triazole, N,N'-dinitrosopentamethylenetetramine, N,N'-dimethyl-N,N'-dinitrosoterephthalamide, etc. - Nitroso-based compounds, etc. Examples of the thermally expandable microspheres include microspheres formed by enclosing a substance that is easily vaporized and expanded by heating in a case. Examples of the above-mentioned substances that are easily vaporized and expanded by heating include isobutane, propane, and pentane. Heat-expandable microspheres can be produced by encapsulating a substance that is easily vaporized and expanded by heating in a shell-forming substance by a coacervation method, an interfacial polymerization method, or the like. As the above-mentioned shell-forming substance, a substance that exhibits thermal fusion properties, or a substance that can be ruptured by the thermal expansion of the encapsulated substance can be used. Examples of such substances include vinylidene chloride-acrylonitrile copolymers, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysilicon, and the like. . As said adhesive force non-weakening-type adhesive layer, a pressure-sensitive adhesive layer is mentioned, for example. Furthermore, the pressure-sensitive adhesive layer includes an adhesive layer formed of the radiation-curable adhesive described above with respect to the adhesive layer with reduced adhesive force by irradiating radiation to harden it but still have a certain degree of adhesion. The adhesive layer of the form of force. As the adhesive for forming the adhesive force non-weakening type adhesive layer, one type of adhesive may be used, or two or more types of adhesive may be used. In addition, the adhesive layer 12 may be a non-adhesive adhesive layer as a whole, or a part of the adhesive layer may be a non-adhesive adhesive layer. For example, when the adhesive layer 12 has a single-layer structure, the whole of the adhesive layer 12 can be an adhesive layer with a non-reduced adhesive force, or a specific part of the adhesive layer 12 (for example, as the attachment object of the annular frame) The area outside the central area) is the non-adhesive adhesive layer, and the other parts (such as the central area of the area to which the semiconductor wafer is attached) is the adhesive layer with reduced adhesive force. In addition, when the adhesive layer 12 has a laminated structure, all the adhesive layers in the laminated structure may be non-adhesive adhesive layers, and a part of the adhesive layers in the laminated structure may be non-adhesive. Weakened adhesive layer. The adhesive layer (radiation-curable adhesive layer irradiated with radiation) in the form of hardening by irradiating the adhesive layer formed of the radiation-curable adhesive in advance with radiation does not show adhesion even if the adhesive force is weakened by the radiation. Due to the adhesiveness of the contained polymer components, the minimum adhesive force required for the adhesive layer of the dicing tape can be exerted in the dicing step and the like. In the case of using a radiation-hardening adhesive layer irradiated with radiation, the adhesive layer 12 as a whole is a radiation-hardening adhesive layer irradiated with radiation in the direction of surface expansion of the adhesive layer 12, and can also be adhered. Part of the adhesive layer 12 is a radiation-hardening adhesive layer irradiated with radiation, and the other part is a radiation-hardening adhesive layer that has not been irradiated with radiation. As the adhesive for forming the pressure-sensitive adhesive layer, well-known or conventional pressure-sensitive adhesives can be used, and acrylic adhesives or rubber-based adhesives using an acrylic polymer as a base polymer can be preferably used. When the adhesive layer 12 contains an acrylic polymer as a pressure-sensitive adhesive, the acrylic polymer is preferably a polymer containing a structural unit derived from (meth)acrylate as the structural unit with the largest mass ratio . As said acrylic polymer, the acrylic polymer (for example, 1st acrylic polymer) demonstrated as the acrylic polymer which the said adhesive layer can contain, for example can be used. In addition to the above components, the adhesive layer 12 or the adhesive forming the adhesive layer 12 can also be formulated with known or conventional adhesives such as crosslinking accelerators, adhesion imparting agents, antiaging agents, colorants (pigments, dyes, etc.) Additives used in layers. As said coloring agent, the compound colored by radiation irradiation is mentioned, for example. When a compound colored by radiation irradiation is contained, only the portion irradiated with radiation may be colored. The compound colored by the radiation irradiation is colorless or light-colored before the radiation irradiation, but becomes colored by the radiation irradiation, for example, a leuco dye etc. are mentioned. The usage-amount of the said compound colored by radiation irradiation is not specifically limited, It can select suitably. The thickness of the adhesive layer 12 is not particularly limited. In the case where the adhesive layer 12 is an adhesive layer formed of a radiation-hardening adhesive, the adhesive layer 12 is obtained before and after the radiation-hardening to the adhesive layer 20. From the viewpoint of the balance of the adhesive force, it is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably 5 to 25 μm. (Adhesive Layer) The adhesive layer 20 has both a function as an adhesive for die bonding that exhibits thermosetting properties, and an adhesive function for holding a workpiece such as a semiconductor wafer and a frame member such as a ring frame. The adhesive layer 20 can be cut by applying tensile stress, so that it can be cut and used by applying tensile stress. The adhesive layer 20 and the adhesive constituting the adhesive layer 20 may include a thermosetting resin and a thermoplastic resin as an adhesive component, for example, or a thermoplastic resin having a thermosetting functional group capable of reacting with a curing agent to generate a bond . When the adhesive constituting the adhesive layer 20 contains a thermoplastic resin having a thermosetting functional group, the adhesive does not need to contain a thermosetting resin (epoxy resin or the like). The adhesive layer 20 may have a single-layer structure or a multi-layer structure. As said thermoplastic resin, for example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polymer Butadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET or PBT, Polyamide imide resin, fluororesin, etc. Only one kind of the above-mentioned thermoplastic resins may be used, or two or more kinds thereof may be used. As said thermoplastic resin, an acrylic resin is preferable, and since there are few ionic impurities and heat resistance is high, it is easy to ensure the bonding reliability of the adhesive layer 20. The adhesive layer 20 preferably contains a glass transition temperature of -10～ The polymer at 10°C is the main component of the thermoplastic resin. The so-called main component of the thermoplastic resin refers to the resin component that accounts for the largest mass ratio in the thermoplastic resin component. Regarding the glass transition temperature of the polymer, the glass transition temperature (theoretical value) calculated based on the following Fox formula can be used. The relational expression between the glass transition temperature Tg of the Fox-type polymer and the glass transition temperature Tgi of the homopolymer of each constituent monomer in the polymer. In the following Fox formula, Tg represents the glass transition temperature (°C) of the polymer, Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (°C) of the homopolymer of the monomer i . The glass transition temperature of homopolymers can be obtained from literature values, for example, in "New Polymer Library 7 Introduction to Synthetic Resins for Coatings" (by Kitaoka Kyosan, Polymer Publishing Society, 1995) or "Acrylic Ester Catalog (1997 Edition)" ( The glass transition temperatures of various homopolymers are listed in Mitsubishi Rayon Co., Ltd. On the other hand, the glass transition temperature of the homopolymer of a monomer can also be calculated|required by the method specifically described in Unexamined-Japanese-Patent No. 2007-51271. Fox formula: 1/(273+Tg)=Σ[Wi/(273+Tgi)] It is preferable that the said acrylic resin contains the structural unit derived from a hydrocarbon group containing (meth)acrylate as a structural unit with the largest mass ratio. As the hydrocarbon group-containing (meth)acrylate, for example, the hydrocarbon group-containing (meth)acrylate exemplified as the hydrocarbon group-containing (meth)acrylate forming the acrylic polymer that can be contained in the above-mentioned adhesive layer may be exemplified. . The above-mentioned acrylic resin may contain a structural unit derived from another monomer component which can be copolymerized with the hydrocarbon group-containing (meth)acrylate. Examples of the above-mentioned other monomer components include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, Functional group-containing monomers such as acrylamide and acrylonitrile, various polyfunctional monomers, and the like, specifically, those exemplified as other monomer components constituting the acrylic polymer that can be contained in the above-mentioned adhesive layer can be used. Among the above-mentioned acrylic resins, an acrylic polymer having a nitrile group (sometimes referred to as a "second acrylic polymer") is preferable. It is particularly preferable that the adhesive layer 12 contains the first acrylic polymer and the adhesive layer 20 contains the second acrylic polymer. Because the adhesive layer 12 contains the first acrylic polymer and the adhesive layer 20 contains the second acrylic polymer, not only a high shear adhesion force between the two layers is ensured, but also the lamination direction between the two layers can be suppressed. The bonding interaction of the above effects, therefore, can further suppress the rise of the semiconductor wafer with the adhesive layer attached from the adhesive layer in the expansion step, and can achieve better pick-up in the pick-up step. In particular, when the adhesive layer and the adhesive layer are formed by lamination by the above-mentioned lamination coating method, in general, the interaction of the bonding property acting in the lamination direction between the two layers tends to be excessive, so the above-mentioned constitution is preferable. . The second acrylic polymer having a nitrile group preferably contains a structural unit derived from a nitrile group-containing monomer. Examples of the nitrile group-containing monomer include acrylonitrile, methacrylonitrile, and cyanostyrene. In the infrared absorption spectrum of the second acrylic polymer having a nitrile group, the height of the peak near 2240 cm ^-1 derived from the nitrile group (the absorption peak belonging to the C≡N stretching vibration) is relative to the height of 1730 cm derived from the carbonyl group The ratio of the heights of the peaks in the vicinity of ^-1 (belonging to the absorption peak of the C=O stretching vibration) is preferably 0.01 or more, more preferably 0.015 or more, and still more preferably 0.02 or more. Moreover, the said ratio becomes like this. Preferably it is 0.1 or less, More preferably, it is 0.09 or less, More preferably, it is 0.08 or less. That is, it is preferable to set the relative content of the nitrile group of the second acrylic polymer to such an extent that the above-mentioned ratio falls within such a range. If the above ratio is 0.01 or more, better pickup can be achieved in the pickup step. If the above-mentioned ratio is 0.1 or less, it is possible to further suppress the rise of the semiconductor wafer with the adhesive layer cut in the expansion step from the adhesive layer. When the adhesive layer 20 contains both a thermoplastic resin and a thermosetting resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, and polyurethane. Ester resin, polysiloxane resin, thermosetting polyimide resin, etc. As for the said thermosetting resin, only 1 type may be used, and 2 or more types may be used for it. As the above-mentioned thermosetting resin, epoxy resin is preferable, because there is a tendency that the content of ionic impurities, etc., which may cause corrosion of the semiconductor wafer of the die attach object, is low. Moreover, as a hardening|curing agent of an epoxy resin, a phenol resin is preferable. As said epoxy resin, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, Phenol type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoin type, triglycidyl isocyanurate type, glycidylamine type ring Oxygen resin etc. Among them, preferred are novolak-type epoxy resins, biphenyl-type epoxy resins, trishydroxyphenylmethane-type epoxy resins, Tetraphenol ethane type epoxy resin. As a phenol resin which can function as an epoxy resin hardener, a novolac-type phenol resin, a resol-type phenol resin, polyhydroxystyrene, such as polyparahydroxystyrene, etc. are mentioned, for example. As a novolak-type phenol resin, a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a t-butylphenol novolak resin, a nonylphenol novolak resin, etc. are mentioned, for example. Only one type of the above-mentioned phenol resin may be used, or two or more types may be used. Among them, phenol novolac resins and phenol arylenes are preferred from the viewpoint of improving the connection reliability of the adhesive when used as a hardener for an epoxy resin as an adhesive for die bonding. base resin. In the adhesive layer 20, from the viewpoint of sufficiently proceeding the curing reaction of the epoxy resin and the phenol resin, the hydroxyl group in the phenol resin is preferably 1 equivalent to the epoxy group in the epoxy resin component. The phenol resin is contained in an amount of 0.5 to 2.0 equivalents, more preferably 0.7 to 1.5 equivalents. When the adhesive layer 20 contains a thermosetting resin, the content ratio of the above-mentioned thermosetting resin is relative to the adhesive layer 20 from the viewpoint of appropriately exhibiting the function of the adhesive layer 20 as a thermosetting adhesive. The total mass is preferably 5 to 60 mass %, more preferably 10 to 50 mass %. When the adhesive layer 20 contains a thermoplastic resin having a thermosetting functional group (eg, a second acrylic polymer), as the thermoplastic resin, for example, a thermosetting functional group-containing acrylic resin can be used. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth)acrylate as a structural unit having the largest mass ratio. Examples of the hydrocarbon group-containing (meth)acrylates include hydrocarbon group-containing (meth)acrylates exemplified as the hydrocarbon group-containing (meth)acrylates that form the acrylic polymer that can be contained in the above-mentioned adhesive layer. . On the other hand, as a thermosetting functional group in a thermosetting functional group containing acrylic resin, a glycidyl group, a carboxyl group, a hydroxyl group, an isocyanate group etc. are mentioned, for example. Among them, a glycidyl group and a carboxyl group are preferable. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin and a carboxyl group-containing acrylic resin are particularly preferable. Moreover, it is preferable to contain a thermosetting functional group-containing acrylic resin together with a curing agent. Examples of the curing agent include crosslinking agents that can be contained in the radiation-curable adhesive for forming the adhesive layer 12. example. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol-based compound as a curing agent, for example, the various phenol resins described above can be used. The epoxy value of the second acrylic polymer that can be contained in the adhesive layer 20 is preferably 0.05 eq/kg or more, more preferably 0.1 eq/kg or more, and still more preferably 0.2 eq/kg or more. In addition, the epoxy value of the second acrylic polymer is preferably 1 eq/kg or less, more preferably 0.9 eq/kg or less. It is preferable that it is 5-95 mass %, and, as for the content rate of the 2nd acrylic polymer of such an epoxy value in the adhesive bond layer 20, it is more preferable that it is 40-80 mass %. The carboxylic acid value of the second acrylic polymer that can be contained in the adhesive layer 20 is preferably 1 mgKOH/g or more, more preferably 3 mgKOH/g or more, and still more preferably 5 mgKOH/g or more. In addition, the carboxylic acid value of the second acrylic polymer is preferably 20 mgKOH/g or less, more preferably 18 mgKOH/g or less. The content ratio of the second acrylic polymer having such a carboxylic acid value in the adhesive layer 20 is preferably 5 to 95% by mass, more preferably 40 to 80% by mass. For the adhesive layer 20 before curing for the purpose of die bonding, in order to achieve a certain degree of crosslinking, it is preferable to mix, for example, a resin composition that can be contained in the adhesive layer 20 in the resin composition for forming an adhesive layer. The polyfunctional compound that reacts and bonds with the functional groups at the ends of the molecular chains of the resins is used as a cross-linking component. Such a configuration is preferable from the viewpoint of improving the adhesive property of the adhesive layer 20 at high temperature, and from the viewpoint of realizing the improvement in the heat resistance of the adhesive layer 20 . As said crosslinking component, a polyisocyanate compound is mentioned, for example. As a polyisocyanate compound, tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5- naphthalene diisocyanate, adducts of polyol and diisocyanate, etc. are mentioned, for example. The content of the crosslinking component in the resin composition for forming an adhesive layer is increased relative to 100 parts by mass of the resin having the above-mentioned functional group capable of reacting with the crosslinking component and bonding with the above-mentioned functional group, so that the amount of the adhesive layer 20 to be formed is increased. From the viewpoint of cohesive force, it is preferably 0.05 parts by mass or more, and from the viewpoint of improving the adhesive force of the adhesive layer 20 to be formed, it is preferably 7 parts by mass or less. Moreover, as said crosslinking component, other polyfunctional compounds, such as an epoxy resin, can also be used together with a polyisocyanate compound. The content ratio of the high molecular weight component in the adhesive layer 20 is preferably 50 to 100 mass %, more preferably 50 to 80 mass %. The high molecular weight component refers to a component having a weight average molecular weight of 10,000 or more. When the content ratio of the above-mentioned high molecular weight component is within the above-mentioned range, it is preferable from the viewpoint of simultaneously achieving the adhesiveness of the adhesive layer 20 to the ring frame at room temperature and its vicinity and preventing residues during peeling . Moreover, the adhesive agent layer 20 may contain the liquid resin which is liquid at 23 degreeC. When the adhesive layer 20 contains the above-mentioned liquid resin, the content ratio of the liquid resin in the adhesive layer 20 is preferably 1 to 10 mass %, more preferably 1 to 5 mass %. When the content ratio of the above-mentioned liquid resin is within the above-mentioned range, the adhesive layer 20 can achieve both the adhesiveness of the adhesive layer 20 at room temperature and its vicinity to the following ring-shaped frame and the prevention of residue at the time of peeling. better. The adhesive layer 20 preferably contains a filler. Physical properties such as electrical conductivity, thermal conductivity, elastic modulus, and the like of the adhesive layer 20 can be adjusted by preparing the filler for the adhesive layer 20 . Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are particularly preferred. Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, nitride Boron, crystalline silicon dioxide, amorphous silicon dioxide, and simple metals such as aluminum, gold, silver, copper, and nickel, or alloys, amorphous carbon black, and graphite can also be used. The filler can have various shapes such as spherical, needle, and flake. As said filler, only 1 type may be used and 2 or more types may be used. From the viewpoint of ensuring the adhesiveness of the adhesive layer 20 to the annular frame in the following cold expansion step, the filler content in the adhesive layer 20 is preferably 30 mass % or less, more preferably 25 mass % or less . The average particle diameter of the above-mentioned filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. When the said average particle diameter is 0.005 micrometer or more, the wettability and adhesiveness with respect to to-be-adhered bodies, such as a semiconductor wafer, are further improved. When the said average particle diameter is 10 micrometers or less, the effect of the filler added for providing the said each characteristic can fully be exhibited, and heat resistance can be ensured. In addition, the average particle diameter of a filler can be calculated|required using, for example, a photometric particle size distribution meter (for example, brand name "LA-910", the Horiba Manufacturing Co., Ltd. make). The adhesive layer 20 may contain other components as needed. As said other components, a hardening catalyst, a flame retardant, a silane coupling agent, an ion scavenger, a dye etc. are mentioned, for example. As said flame retardant, an antimony trioxide, an antimony pentoxide, a brominated epoxy resin, etc. are mentioned, for example. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropyl Methyldiethoxysilane, etc. Examples of the ion scavenger include hydrotalcites, bismuth hydroxide, hydrous antimony oxide (for example, "IXE-300" manufactured by Toagosei Co., Ltd.), and zirconium phosphate with a specific structure (for example, manufactured by Toagosei Co., Ltd. "IXE-100"), magnesium silicate (such as "Kyoword 600" manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (such as "Kyoword 700" manufactured by Kyowa Chemical Industry Co., Ltd.), etc. Compounds capable of forming complexes with metal ions can also be used as ion scavengers. As such a compound, a triazole type compound, a tetrazole type compound, and a bipyridine type compound are mentioned, for example. Among these, from the viewpoint of the stability of the complex formed with the metal ion, a triazole-based compound is preferred. Examples of such triazole-based compounds include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, and carboxybenzene Triazole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chlorobenzotriazole , 2-(2-hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-pentylphenyl) benzotriazole, 2-(2-hydroxy-5-tertiary octylphenyl)benzotriazole, 6-(2-benzotriazolyl)-4-tertiary octyl-6'-tertiary Butyl-4'-methyl-2,2'-methylenebisphenol, 1-(2',3'-hydroxypropyl)benzotriazole, 1-(1,2-dicarboxydiethyl ) benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-tert-pentyl-6-{(H-benzotriazol-1-yl)methan yl}phenol, 2-(2-hydroxy-5-tert-butylphenyl)-2H-benzotriazole, 3-[3-(2H-benzotriazol-2-yl)-5-(1 ,1-Dimethylethyl)-4-hydroxyphenyl]propionic acid C7-C9 alkyl ester, 3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H-benzo octyl triazol-2-yl)phenyl]propionate, 3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate 2-ethylhexyl acid, 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1,1,3,3- Tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-tert-butylphenol, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-Hydroxy-5-tert-octylphenyl)benzotriazole, 2-(3-tert-butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzotriazole , 2-(2-hydroxy-3,5-di-tert-pentylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chloro-benzene Triazole, 2-[2-Hydroxy-3,5-bis(1,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2'-methylenebis[6- (2H-benzotriazol-2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol], 2-[2-hydroxy-3,5-bis(α,α- Dimethylbenzyl)phenyl]-2H-benzotriazole, 3-[3-(2H-benzotriazol-2-yl)-5-tert-butyl-4-hydroxyphenyl]propionic acid methyl ester, etc. In addition, a specific hydroxyl group-containing compound such as a hydroquinone compound, a hydroxyanthraquinone compound, and a polyphenol compound can also be used as an ion scavenger. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthrarufin, tannin, gallic acid, methyl gallate, biphenyl Triphenol, etc. Only one type of the above-mentioned other additives may be used, or two or more types may be used. The adhesive force of the adhesive layer 20 to SUS under the conditions of a temperature of 23° C., a peeling speed of 300 mm/min and an angle of 180° is preferably 0.1-20 N/10 mm, more preferably 0.5-15 N/10 mm, and further It is preferably 1 to 12 N/10 mm. If the above-mentioned adhesive force is 0.1 N/10 mm or more, when the adhesive layer 20 is attached to the annular frame in the expansion step, the adhesiveness between the adhesive layer 20 and the annular frame can be improved, and in the expansion step The slicing die-bonding film X is well held by the annular frame. If the above-mentioned adhesive force is 20 N/10 mm or less, when the annular frame is attached to the adhesive layer 20 in the expansion step, the dicing die-bonding film X is easily peeled off from the annular frame. The above-mentioned adhesive force to SUS can be measured using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). The test piece used for this test is preferably a test piece with a size of 50 mm in width and 120 mm in length. The storage elastic modulus of the adhesive layer 20 at 23° C. is preferably 100-4000 MPa, more preferably 300-3000 MPa, and still more preferably 500-2000 MPa. If the storage elastic modulus is above 100 MPa, when the annular frame is attached to the adhesive layer 20 in the expansion step, the dicing die-bonding film X is easily peeled off from the annular frame. If the storage elastic modulus is 4000 MPa or less, when the annular frame is attached to the adhesive layer 20 in the expansion step, the adhesiveness between the adhesive layer 20 and the annular frame can be improved, and the adhesive layer 20 can be used in the expansion step. The ring-shaped frame holds the slicing die-bond film X well. The storage elastic modulus can be measured using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). The test piece used for this test is preferably a test piece with a size of 50 mm in width and 120 mm in length. The thickness of the adhesive layer 20 (the total thickness in the case of the laminate) is not particularly limited, and is, for example, 1 to 200 μm. The upper limit is preferably 100 μm, more preferably 80 μm. The lower limit is preferably 3 μm, more preferably 5 μm. In this embodiment, in the in-plane direction D of the dicing die attach film X, the outer peripheral end 20e of the adhesive layer 20, the outer peripheral end 11e of the substrate 11 in the dicing tape 10, and the outer peripheral end of the adhesive layer 12 12e is within 1000 μm, preferably within 500 μm. That is, the outer peripheral end 20e of the adhesive layer 20 is located in the film in-plane direction D, and its entire circumference is located between 1000 μm inside and 1000 μm outside, preferably 500 μm inside, with respect to the outer peripheral end 11e of the substrate 11 It is between 500 μm outside and 1000 μm inside and 1000 μm outside, preferably between 500 μm and 500 μm outside, with respect to the outer peripheral end 12e of the adhesive layer 12 . In the configuration in which the dicing tape 10 or its adhesive layer 12 and the adhesive layer 20 thereon have substantially the same size in the in-plane direction D, the adhesive layer 20 includes not only the workpiece attaching area but also the frame attaching area. area. In the dicing die-bonding film X, when the adhesive layer 12 of the dicing tape 10 is a radiation-hardening adhesive layer, in the T-type peel test under the conditions of a temperature of 23° C. and a peeling speed of 300 mm/min , the peeling force between the adhesive layer 12 and the adhesive layer 20 after radiation curing is preferably 0.06-0.25 N/20 mm, more preferably 0.1-0.2 N/20 mm. If the above peeling force is 0.06 N/20 mm or more, the adhesiveness between the adhesive layer of the dicing tape and the adhesive layer thereon can be ensured, and the self-adhesion of the semiconductor wafer to which the adhesive layer is attached during the expansion step can be further suppressed. The agent layer is raised. If the above-mentioned peeling force is 0.25 N/20 mm or less, better pickup can be achieved in the pickup step. Furthermore, in this specification, the so-called "radiation-curable adhesive layer" refers to an adhesive layer formed of the above-mentioned radiation-curable adhesive, including an adhesive layer having radiation curability and a Both the adhesive layer (radiation-curing adhesive layer irradiated with radiation) hardened by irradiation. In the dicing die-bonding film X, the peeling force between the adhesive layer 12 and the adhesive layer 20 before radiation hardening is better in the T-type peel test at a temperature of 23°C and a peeling speed of 300 mm/min. 2 N/20 mm or more, more preferably 3 N/20 mm or more. If the above-mentioned peeling force is 2 N/20 mm or more, when the expansion step is performed without radiation curing, the adhesiveness between the adhesive layer of the dicing tape and the adhesive layer thereon can be ensured, and The semiconductor wafer to which the adhesive layer is attached in the expansion step is further suppressed from rising from the adhesive layer, and the adhesive layer can be cut more favorably. Moreover, the said peeling force is 20 N/20 mm or less, for example, Preferably it is 10 N/20 mm or less. In addition, the above-mentioned "before radiation curing" refers to a state in which the adhesive layer is not cured by irradiating radiation, and also includes the case where the adhesive layer 12 is not a radiation-curing adhesive layer. The above-mentioned T-peel test was performed using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). The test piece used for this test can be produced in the following manner. First, when the adhesive layer is before radiation curing and the adhesive layer 12 after radiation curing is to be obtained, the adhesive layer 12 is irradiated with 350 mJ/cm ² from the side of the substrate 11 in the diced die-bonding film X. The adhesive layer 12 is cured by ultraviolet rays. Then, after sticking the backing tape (trade name "BT-315", manufactured by Nitto Denko Co., Ltd.) on the adhesive layer 20 side of the dicing die-bonding film X, cut out a width of 50 mm × length of 120 mm. test piece. In the dicing die-bonding film X, the difference between the surface roughness Ra of the adhesive layer 12 and the surface roughness Ra of the adhesive layer 20 in the contact surface between the adhesive layer 12 and the adhesive layer 20 is [(and the following The absolute value of the surface roughness Ra) of the adhesive layer 12 in the contact surface of the adhesive layer 20 - (the surface roughness Ra of the adhesive layer 20 in the contact surface with the adhesive layer 12)] is preferably 100 nm or less. . If the difference in the above-mentioned surface roughness Ra is 100 nm or less, the adhesiveness between the adhesive layer of the dicing tape and the adhesive layer thereon can be further improved, and the semiconductor wafer to which the adhesive layer is attached in the expansion step can be further suppressed. The self-adhesive layer is partially peeled off, that is, raised. Furthermore, the surface roughness Ra of the adhesive layer 12 and the surface roughness Ra of the adhesive layer 20 in the contact surface between the adhesive layer 12 and the adhesive layer 20 can be obtained, for example, by the following method: The interface between the adhesive layer 12 and the adhesive layer 20 in the die-bonding film X is peeled off. The surface roughness Ra was measured respectively. The slicing die-bond film X may have a spacer S as shown in FIG. 2 . Specifically, a sheet-like form in which each dicing die-bonding film X is attached with a separator S can be adopted, or the separator S is elongated and a plurality of dicing die-bonding films X are arranged thereon, and the The separator S is wound into a roll shape. The spacer S is an element for covering the surface of the adhesive layer 20 of the dicing die attach film X to protect it, and is peeled off from the dicing die attach film X when the dicing die attach film X is used. As the separator S, for example, a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a surface coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent can be mentioned. Cloth, plastic film or paper, etc. The thickness of the separator S is, for example, 5 to 200 μm. The diced die attach film X, which is one embodiment of the diced die attach film of the present invention, is produced, for example, as follows. First, as shown in FIG.3(a), the adhesive film 20' is produced on the separator S. The adhesive film 20 ′ is to be processed into a long strip of the adhesive layer 20 . When producing the adhesive film 20', first, a composition (adhesive composition) for forming the adhesive layer 20 including a resin, a filler, a hardening catalyst, a solvent, and the like is produced. Next, the adhesive composition is coated on the separator to form an adhesive composition layer. As a coating method of the adhesive composition, roll coating, screen coating, gravure coating, etc. are mentioned, for example. Next, the adhesive composition layer is cured by solvent removal, curing, or the like as necessary. The desolvation is performed, for example, at a temperature of 70 to 160° C. and a time of 1 to 5 minutes. The adhesive film 20 ′ can be formed on the separator S in the above manner. Next, as shown in FIG.3(b), the adhesive layer 12' is formed by laminating on the adhesive film 20'. The adhesive layer 12 ′ is to be processed to form the above-mentioned adhesive layer 12 . When forming the adhesive layer 12', first, an adhesive layer-forming composition (adhesive composition) comprising an adhesive for forming the adhesive layer 12, a solvent, and the like is coated on the adhesive film 20' to form an adhesive composition layer. As a coating method of an adhesive composition, a roll coating, a screen coating, a gravure coating etc. are mentioned, for example. Then, the adhesive composition layer is cured by desolvation, hardening, or the like as necessary. The desolvation is performed, for example, at a temperature of 80 to 150° C. and a time of 0.5 to 5 minutes. The adhesive film 20 ′ to be processed into the adhesive layer 20 and the adhesive layer 12 ′ to be processed into the adhesive layer 12 can be formed by such a build-up coating method. Next, as shown in FIG.3(c), the base material 11' is press-bonded on the adhesive bond layer 12', and it is bonded together. The base material 11 ′ is to be processed to form the above-mentioned base material 11 . The resin-made substrate 11' can be produced by a calendering method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, etc. Film production method. Surface treatment is performed on the film after film formation and the base material 11 ′ as needed. In this step, the bonding temperature is, for example, 30 to 50°C, preferably 35 to 45°C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm, or preferably 1 to 10 kgf/cm. Thereby, the elongate laminated sheet which has the laminated structure of the separator S, the adhesive film 20', the adhesive layer 12', and the base material 11' is obtained. Furthermore, when the adhesive layer 12 is a radiation-curable adhesive layer as described above, when the adhesive layer 12' is irradiated with radiation such as ultraviolet rays after being bonded to the adhesive film 20', for example, from the substrate 11' The adhesive layer 12' is irradiated with radiation such as ultraviolet rays. The irradiation amount is, for example, 50 to 500 mJ/cm ² , or preferably 100 to 300 mJ/cm ² . The irradiated region is to be formed, for example, as the entire region of the adhesive layer 12 that is in close contact with the adhesive layer 20 . Next, as shown in FIG. 3( d ), the above-mentioned laminated sheet body is processed by inserting the processing blade from the side of the base material 11 ′ to the separator S (in FIG. 3( d ), a thick solid line pattern is performed. Denotes the cut site). For example, while moving the laminated sheet body at a constant speed in one direction F, the rotation of an additional tool that is arranged so as to be rotatable around an axis perpendicular to the direction F and has a press-working tool attached to the surface of the roll The surface of the additional knife of the roller (not shown) is in contact with the base material 11 ′ side of the laminated sheet with a specific pressing force. Thereby, the dicing tape 10 (the base material 11 , the adhesive layer 12 ) and the adhesive layer 20 are formed in one processing, and the dicing die-bonding film X is formed on the separator S. After that, as shown in FIG. 3( e ), the material build-up portion around the slicing die-bonding film X is removed from the spacer S. In the above manner, the die-cut die-stick film X can be manufactured. THE MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE A semiconductor device can be manufactured using the dicing die-bonding film of the present invention. Specifically, a semiconductor device can be manufactured by the following manufacturing method, which includes the steps of: attaching a division of a semiconductor wafer including a plurality of semiconductor chips to the above-mentioned adhesive layer side in the dicing die-bonding film of the present invention body, or a semiconductor wafer that can be singulated into a plurality of semiconductor chips (sometimes referred to as "step A"); expand the dicing ribbon in the dicing die-bonding film of the present invention at a relatively low temperature to cut at least the above Then the agent layer is obtained to obtain the semiconductor wafer with the agent layer attached (sometimes referred to as "step B"); the above-mentioned dicing belt is expanded under the condition of relatively high temperature to widen the distance between the above-mentioned semiconductor wafer with the agent layer attached (sometimes referred to as "step B"). Sometimes referred to as "Step C"); and picking up the above-mentioned semiconductor wafer with the adhesive layer attached (sometimes referred to as "Step D"). 4 to 9 show one embodiment of a method of manufacturing a semiconductor device using the diced die-bonded film of the present invention. The split body of the above-mentioned semiconductor wafer including a plurality of semiconductor chips used in Step A, or a semiconductor wafer that can be singulated into a plurality of semiconductor chips can be obtained in the following manner. First, as shown in FIGS. 4( a ) and 4( b ), the dividing grooves 30 a are formed on the semiconductor wafer W (the dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are placed on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are formed on the first surface Wa. Next, after bonding the wafer processing tape T1 having the adhesive surface T1a to the second surface Wb side of the semiconductor wafer W, a dicing device is used in a state where the semiconductor wafer W is held on the wafer processing tape T1 A rotary blade of the same type forms dividing grooves 30 a of a predetermined depth on the first surface Wa side of the semiconductor wafer W. As shown in FIG. The dividing grooves 30a are spaces for separating the semiconductor wafer W into semiconductor wafer units (in FIGS. 4 to 6 , the dividing grooves 30a are schematically indicated by thick solid lines). Next, as shown in FIG. 4( c ), the wafer processing tape T2 having the adhesive surface T2 a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is separated from the semiconductor wafer W. stripping. Next, as shown in FIG. 4( d ), while the semiconductor wafer W is held on the wafer processing tape T2 , the semiconductor wafer W is ground and thinned from the second surface Wb until the semiconductor wafer W is thinned. becomes a specific thickness (wafer thinning step). The grinding process can be performed using a grinding process apparatus equipped with a grinding stone. Through this wafer thinning step, in this embodiment, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips 31 is formed. Specifically, the semiconductor wafer 30A has, on the second surface Wb side, a portion (connection portion) that connects portions to be singulated into a plurality of semiconductor chips 31 . The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the end on the second surface Wb side of the dividing groove 30a is, for example, 1 to 30 μm, preferably 3 to 20 μm . (Step A) In Step A, a split body of a semiconductor wafer including a plurality of semiconductor chips, or a semiconductor wafer that can be singulated into a plurality of semiconductor chips is attached to the adhesive layer 20 side in the dicing die attach film X round. In an embodiment of step A, as shown in FIG. 5( a ), the semiconductor wafer 30A held on the wafer processing tape T2 is attached to the adhesive layer 20 of the dicing die-bonding film X. Thereafter, as shown in FIG. 5( b ), the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. In the case where the adhesive layer 12 in the dicing die-bonding film X is a radiation-curable adhesive layer, the adhesive layer 20 can also be applied to the adhesive from the side of the substrate 11 after the semiconductor wafer 30A is attached to the adhesive layer 20 . The layer 12 is irradiated with radiation such as ultraviolet rays, in place of the above-mentioned radiation irradiation in the manufacturing process of the diced die attach film X. The irradiation amount is, for example, 50 to 500 mJ/cm ² , or preferably 100 to 300 mJ/cm ² . In the dicing die-bonding film X, the irradiation area (irradiated area R shown in FIG. 1 ) as a measure for reducing the adhesive force of the adhesive layer 12 is, for example, the area where the adhesive layer 20 of the adhesive layer 12 is attached, except for the Areas other than the perimeter. (Step B) In step B, the dicing tape 10 in the dicing die attach film X is expanded under a relatively low temperature condition to at least cut the adhesive layer 20 to obtain a semiconductor wafer with the adhesive layer attached. In an embodiment of step B, first, after attaching the annular frame 41 on the adhesive layer 20 in the dicing die attach film X, as shown in FIG. The die-cut adhesive film X is fixed to the holder 42 of the expansion device. Then, as shown in FIG. 6( b ), the first expansion step (cold expansion step) under relatively low temperature conditions is performed, and the semiconductor wafer 30A is singulated into a plurality of semiconductor chips 31 . The adhesive layer 20 of X is cut into small pieces of the adhesive layer 21 to obtain the semiconductor wafer 31 with the adhesive layer attached. In the cold expansion step, the hollow cylindrical lifting member 43 of the expansion device is brought into contact with the dicing tape 10 on the lower side in the drawing of the dicing die-bonding film X and ascends, and the semiconductor wafer 30A will be attached thereto. The dicing tape 10 of the dicing die attach film X is stretched and expanded in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is carried out under the condition that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the slicing zone 10 . The temperature condition in the cold expansion step is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, more preferably -15°C. The expansion speed in the cold expansion step (the rising speed of the jacking member 43 ) is preferably 0.1 to 100 mm/sec. In addition, the amount of expansion in the cold expansion step is preferably 3 to 16 mm. When the semiconductor wafer 30A capable of being singulated into a plurality of semiconductor chips is used in step B, the semiconductor wafer 30A is cut at a thin and easily broken part to be singulated into the semiconductor chip 31 . In addition, in step B, the tensile stress generated by the dicing tape 10 is exerted in the adhesive layer 20 in close contact with the adhesive layer 12 of the expanded dicing tape 10 , and in each area in close contact with each semiconductor wafer 31 The effect of suppressing deformation, on the other hand, does not occur in the portion located in the vertical direction in the drawing of the dividing grooves between the semiconductor wafers 31 . As a result, the adhesive layer 20 is cut at a portion in the vertical direction of the dividing groove between the semiconductor wafers 31 . After being cut by expansion, as shown in FIG. 6( c ), the lifting member 43 is lowered to release the expanded state of the dicing ribbon 10 . (Step C) In step C, the above-mentioned dicing belt 10 is expanded under a relatively high temperature condition to widen the space between the above-mentioned semiconductor wafers to which the adhesive layer is attached. In an embodiment of step C, first, as shown in FIG. 7( a ), the second expansion step (normal temperature expansion step) under relatively high temperature conditions is performed, and the distance between the semiconductor wafers 31 to which the adhesive layer is attached is adjusted. (separation distance) widened. In step C, the hollow cylindrical lifting member 43 of the expansion device is raised again, and the dicing tape 10 of the dicing die-bonding film X is expanded. The temperature condition in the second expansion step is, for example, 10°C or higher, preferably 15 to 30°C. The expansion speed (ascending speed of the push-up member 43 ) in the second expansion step is, for example, 0.1 to 10 mm/sec, or preferably 0.3 to 1 mm/sec. In addition, the expansion amount in the second expansion step is, for example, 3 to 16 mm. In step C, the spacing distance between the adhesive layer-attached semiconductor wafers 31 is widened to such an extent that the adhesive layer-attached semiconductor wafers 31 can be appropriately picked up from the dicing tape 10 in the pickup step described below. After the separation distance is widened by expansion, as shown in FIG. 7( b ), the lifting member 43 is lowered to release the expanded state of the dicing ribbon 10 . From the viewpoint of suppressing the separation distance between the semiconductor wafers 31 with the adhesive layer on the dicing tape 10 from being reduced after the expanded state is released, it is preferable to compare the semiconductor wafers 31 in the dicing tape 10 before releasing the expanded state. The outer part of the holding area is heated to shrink it. After step C, there may be a cleaning step as needed, that is, cleaning the semiconductor wafer 31 side in the dicing tape 10 of the semiconductor wafer 31 with the adhesive layer with a cleaning liquid such as water. (Step D) In step D (pick-up step), the semiconductor wafer of the singulated adhesive layer is picked up. In an embodiment of step D, after the above cleaning step as needed, as shown in FIG. 8 , the semiconductor wafer 31 with the adhesive layer attached is picked up from the dicing belt 10 . For example, on the lower side of the dicing belt 10 in the figure, the pin member 44 of the pickup mechanism is raised to lift up the semiconductor wafer 31 with the adhesive layer to be picked up through the dicing belt 10, and then the suction jig 45 is used for suction. Keep. In the pick-up step, the push-up speed of the pin member 44 is, for example, 1 to 100 mm/sec, and the push-up amount of the pin member 44 is, for example, 50 to 3000 μm. The above-mentioned manufacturing method of a semiconductor device may also include other steps than steps A to D. For example, in one embodiment, as shown in FIG. 9( a ), the picked-up semiconductor wafer 31 with the adhesive layer attached is temporarily fixed to the adherend 51 via the adhesive layer 21 (temporary fixing step). As the adherend 51 , for example, a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, a separately produced semiconductor wafer, etc. can be mentioned. When the adhesive layer 21 is temporarily fixed, the shear adhesion force to the adherend 51 at 25° C. is preferably 0.2 MPa or more, more preferably 0.2-10 MPa. The above-mentioned shear adhesive force of the adhesive layer 21 of 0.2 MPa or more can suppress the bonding surface between the adhesive layer 21 and the semiconductor wafer 31 or the adherend 51 due to ultrasonic vibration or heating in the following wire bonding step. Shear deformation occurs, and wire bonding can be performed appropriately. Moreover, when the adhesive layer 21 is temporarily fixed, the shear adhesion force to the adherend 51 at 175° C. is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa. Then, as shown in FIG. 9( b ), the electrode pads (not shown) of the semiconductor chip 31 and the terminals (not shown) of the adherend 51 are electrically connected via the bonding wires 52 (wire bonding step). ). The electrode pads of the semiconductor chip 31 or the terminals of the adherend 51 and the bonding wires 52 can be connected by ultrasonic welding with heating without thermally hardening the adhesive layer 21 . As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The wire heating temperature during wire bonding is, for example, 80 to 250°C, or preferably 80 to 220°C. In addition, the heating time is several seconds to several minutes. Next, as shown in FIG. 9( c ), the semiconductor chip 31 is sealed by the sealing resin 53 for protecting the semiconductor chip 31 on the adherend 51 or the bonding wire 52 (sealing step). In the sealing step, the adhesive layer 21 is thermally hardened. In the sealing step, the sealing resin 53 is formed, for example, by a transfer injection molding technique using a mold. As a constituent material of the sealing resin 53, an epoxy resin can be used, for example. In the sealing step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185° C., and the heating time is, for example, 60 seconds to several minutes. In the case where the sealing resin 53 is not sufficiently hardened in the sealing step, a post-hardening step for completely hardening the sealing resin 53 is performed after the sealing step. When the adhesive layer 21 is not completely thermally hardened in the sealing step, the adhesive layer 21 and the sealing resin 53 can also be fully thermally hardened in the post-hardening step. In the post-hardening step, the heating temperature is, for example, 165 to 185° C., and the heating time is, for example, 0.5 to 8 hours. In the above-described embodiment, as described above, after the semiconductor wafer 31 with the adhesive layer is temporarily fixed to the adherend 51, the wire bonding step is performed without thermally curing the adhesive layer 21 completely. In the above-mentioned method of manufacturing a semiconductor device, instead of this configuration, the semiconductor wafer 31 with the adhesive layer is temporarily fixed to the adherend 51, and then the adhesive layer 21 is thermally hardened before performing the wire bonding step. In the above-mentioned manufacturing method of a semiconductor device, as another embodiment, the wafer thinning step shown in FIG. 10 may be performed instead of the above-mentioned wafer thinning step with reference to FIG. 4( d ). Referring to FIG. 4( c ), after the above process, in the wafer thinning step shown in FIG. 10 , in the state where the semiconductor wafer W is held on the wafer processing tape T2 , the wafer is removed from the second The surface Wb is ground and thinned to a predetermined thickness to form a semiconductor wafer dividing body 30B including a plurality of semiconductor wafers 31 and held on the wafer processing tape T2. In the above wafer thinning step, the following methods can be used: grinding the wafer until the dividing groove 30a is exposed on the second surface Wb side (the first method); the following method can also be used: grinding the wafer from the second surface Wb side until the Immediately after reaching the dividing groove 30a, the semiconductor wafer dividing body 30B is formed by cracking between the dividing groove 30a and the second surface Wb by the pressing force on the wafer from the rotating grindstone (second method). The depth of the dividing groove 30a formed as described above with reference to FIGS. 4(a) and 4(b) from the first surface Wa is appropriately determined according to the method to be used. In FIG. 10 , the divided grooves 30 a processed by the first method or the divided grooves 30 a processed by the second method and the connected cracks are schematically shown by thick solid lines. In the above-mentioned manufacturing method of a semiconductor device, in step A, the semiconductor wafer divider 30B as a semiconductor wafer divider produced as described above may be used instead of the semiconductor wafer 30A, and the above-described process may be performed with reference to FIGS. 5 to 9 . each step. FIGS. 11( a ) and 11 ( b ) show step B in this embodiment, that is, the first expansion step (cold expansion step) performed after the dicing die attach film X is bonded to the semiconductor wafer divided body 30B. . In step B in this embodiment, the hollow cylindrical-shaped lifting member 43 of the expansion device is made to contact the dicing tape 10 on the lower side in the figure of the dicing die-bonding film X and rise, so that the dicing tape 10 is attached. The dicing tape 10 of the dicing die attach film X of the semiconductor wafer dividing body 30B is stretched and expanded in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer dividing body 30B. This expansion is carried out under the condition that a tensile stress in the range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa, is generated in the slicing zone 10 . The temperature conditions in the cold expansion step are, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and still more preferably -15°C. The expansion speed in the cold expansion step (the rising speed of the jacking member 43 ) is preferably 1 to 400 mm/sec. In addition, the amount of expansion in the cold expansion step is preferably 50 to 200 mm. Through this cold expansion step, the adhesive layer 20 of the dicing die-bonding film X is cut into small pieces of the adhesive layer 21 to obtain the adhesive layer-attached semiconductor wafer 31 . Specifically, in the cold expansion step, the tensile stress generated by the dicing ribbon 10 is exerted on the adhesive layer 20 which is in close contact with the adhesive layer 12 of the dicing ribbon 10 subjected to expansion, and is exerted on the semiconductor wafer dividing body 30B The effect of suppressing deformation occurs in the regions where the semiconductor wafers 31 are in close contact with each other. On the other hand, such a deformation suppressing effect does not occur in the portion in the vertical direction in the drawing of the dividing groove 30a between the semiconductor wafers 31 . As a result, the adhesive layer 20 is cut at a portion in the vertical direction in the drawing of the dividing grooves 30 a between the semiconductor wafers 31 . In the above-described method of manufacturing a semiconductor device, as yet another embodiment, the semiconductor wafer 30C produced as follows may be used instead of the semiconductor wafer 30A or the semiconductor wafer divider 30B used in the step A. In this embodiment, as shown in FIGS. 12( a ) and 12 ( b ), first, a modified region 30 b is formed on the semiconductor wafer W. As shown in FIG. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are placed on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are formed on the first surface Wa. Further, after the wafer processing tape T3 having the adhesive surface T3a is attached to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T3 and processed from the wafer. Using the opposite side of the tape T3, the semiconductor wafer W is irradiated with the laser light collected by the condensing points into the wafer along the planned dividing line, and a modified region is formed in the semiconductor wafer W by ablation using multiphoton absorption. 30b. The modified region 30b is used to separate the semiconductor wafer W into a fragile region of the semiconductor wafer unit. The method of forming the modified region 30b on the line to be divided by irradiating the semiconductor wafer with laser light is described in detail in, for example, Japanese Patent Laid-Open No. 2002-192370. The laser light irradiation conditions in this embodiment are described in, for example, Adjust appropriately within the following conditions. <Laser light irradiation conditions> (A) Laser light Laser light source: semiconductor laser excitation Nd: YAG laser wavelength: 1064 nm Laser spot cross-sectional area: 3.14×10 ^-8 cm ² Oscillation form: Q-switched pulse repetition frequency: Pulse width below 100 kHz: 1 μs or less Output: 1 mJ or less Laser beam quality: TEM00 Polarization characteristics: Linearly polarized light (B) Condensing lens magnification: 100 times or less NA (numerical aperture, numerical aperture): 0.55 Pair of laser beam wavelengths Transmittance: 100% or less (C) Movement speed of the mounting table for placing the semiconductor substrate: 280 mm/sec or less Then, as shown in FIG. 12(c), the semiconductor wafer W is held on the belt for wafer processing In the state of T3, the semiconductor wafer W is thinned by grinding and processing from the second surface Wb to a predetermined thickness, whereby a semiconductor wafer 30C (a wafer 30C) that can be singulated into a plurality of semiconductor wafers 31 is formed. circle thinning step). In the above-mentioned method of manufacturing a semiconductor device, in step A, the semiconductor wafer 30C produced as described above may be used instead of the semiconductor wafer 30A as the semiconductor wafer capable of being singulated, which is performed with reference to FIGS. 5 to 9 . the above steps. FIGS. 13( a ) and 13 ( b ) show step B in this embodiment, that is, the first expansion step (cold expansion step) performed after the dicing die attach film X is bonded to the semiconductor wafer 30C. In the cold expansion step, the hollow cylindrical lifting member 43 of the expansion device is brought into contact with the dicing tape 10 on the lower side in the figure of the dicing die-bonding film X and ascends, and the semiconductor wafer 30C will be attached thereto. The dicing tape 10 of the dicing die attach film X is stretched and expanded in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expansion is carried out under the condition that a tensile stress in the range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa, is generated in the slicing zone 10 . The temperature conditions in the cold expansion step are, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and still more preferably -15°C. The expansion speed in the cold expansion step (the rising speed of the jacking member 43 ) is preferably 1 to 400 mm/sec. In addition, the amount of expansion in the cold expansion step is preferably 50 to 200 mm. Through this cold expansion step, the adhesive layer 20 of the dicing die-bonding film X is cut into small pieces of the adhesive layer 21 to obtain the adhesive layer-attached semiconductor wafer 31 . Specifically, in the cold expansion step, the semiconductor wafer 30C is singulated into a semiconductor wafer 31 by forming cracks in the fragile modified region 30b. In addition, in the cold expansion step, the tensile stress generated by the dicing tape 10 is exerted in the adhesive layer 20 which is in close contact with the adhesive layer 12 of the expanded dicing tape 10 and is exerted on each semiconductor chip of the semiconductor wafer 30C. 31 The effect of suppressing deformation in each of the closely-contacted regions, on the other hand, does not occur in the part located in the vertical direction in the figure of the crack formation part of the wafer. As a result, the adhesive layer 20 is cut at a portion in the vertical direction in the figure of the crack formation portion between the semiconductor wafers 31 . In addition, in the above-mentioned manufacturing method of a semiconductor device, the dicing die-bonding film X can be used for the purpose of obtaining a semiconductor wafer with an adhesive layer as described above, and can also be used for obtaining an adhesive layer when a plurality of semiconductor wafers are laminated and three-dimensionally mounted. The use of semiconductor wafers with adhesive layers. Between the semiconductor chips 31 in such three-dimensional mounting, the adhesive layer 21 and the spacer may be interposed together, or the spacer may not be interposed. [Examples] Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited to these examples at all. Example 1 (adhesive layer) Add acrylic polymer A ₁ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile, and glycidyl methacrylate) to methyl ethyl ketone, that is, the second acrylic acid 54 parts by mass, solid phenol resin (trade name "MEHC-7851SS", solid at 23°C, Meiwa Chemical Co., Ltd.) 3 parts by mass, liquid phenol resin (trade name "MEH-8000H", liquid at 23°C, manufactured by Meiwa Chemical Co., Ltd.) 3 mass parts, and silica filler (trade name "SO-C2 ”, the average particle size is 0.5 μm, Admatechs Co., Ltd.) 40 parts by mass were mixed, and the concentration was adjusted so that the viscosity at room temperature was 700 mPa·s to obtain an adhesive composition. Next, on the polysiloxane mold release treated surface of the PET separator (thickness 38 μm) having the polysiloxane mold release treated surface, an applicator was used to apply the adhesive composition to form a coating film. Desolvation was carried out at 130°C for 2 minutes. The adhesive layer with a thickness of 10 μm in Example 1 was fabricated on the PET separator by the above method. The composition of the adhesive layer in Example 1 is shown in Table 1 (in Table 1, except for the following values about MOI, the unit of each value representing the composition of the composition is the relative “mass part” in the composition. ”). (Adhesive layer) In a reaction vessel equipped with a cooling pipe, a nitrogen gas introduction pipe, a thermometer, and a stirring device, 100 mol parts of lauryl acrylate (LA) and 20 mol parts of 2-hydroxyethyl acrylate (2HEA) were contained , a mixture of benzyl peroxide as a polymerization initiator and toluene as a polymerization solvent, which is 0.2 parts by mass relative to 100 parts by mass of these monomer components, was stirred at 60° C. for 10 hours in a nitrogen atmosphere (polymerization reaction). ). _Thereby , the polymer solution containing acrylic polymer P1 was obtained. The weight _- average molecular weight (Mw) of the acrylic polymer P1 in the polymer solution is 460,000, the glass transition temperature is 9.5°C, and the molar ratio of the structural unit derived from LA to the structural unit derived from 2HEA is 5 . Then, the mixture containing the polymer solution containing the acrylic polymer P1, ₂ -methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst was placed in Stir at room temperature for 48 hours in air (addition reaction). In the reaction solution, the formulation amount of MOI is 16 mol parts relative to 100 mol parts of the above-mentioned lauryl acrylate, and the MOI formulation amount is 16 mol parts relative to the total amount of the structural unit derived from 2HEA or its hydroxyl group in the acrylic polymer P ₁ . The molar ratio of the amount was 0.8. Moreover, in this reaction solution, the compounding quantity of dibutyltin dilaurate was 0.01 mass part with respect to ₁₀₀ mass parts of acryl-type polymer P1. By this addition reaction, the polymerization of the acrylic polymer P ₂ containing a methacrylate group in the side chain (the first acrylic polymer containing the structural unit derived from the unsaturated functional group-containing isocyanate compound) is obtained substance solution. Next, 1 part by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., Ltd.) was added to the polymer solution relative to 100 parts by mass of the acrylic polymer P ₂ , and 2 parts by mass of photopolymerization was started. A starting agent (trade name "Irgacure 127", manufactured by BASF Corporation) was mixed, and the mixture was diluted with toluene so that the viscosity of the mixture at room temperature was 500 mPa·s to obtain an adhesive composition. Next, using an applicator, the adhesive composition was applied on the adhesive layer formed on the PET separator to form a coating film, the coating film was desolvated at 130° C. for 2 minutes, and the adhesive layer was applied to the adhesive layer. An adhesive layer with a thickness of 10 μm is formed thereon. Next, using a laminating machine, a substrate made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB-0104", thickness 130 μm, Kurashiki Textile Co., Ltd.) was attached to the exposed surface of the adhesive layer at room temperature. Co., Ltd.). Next, the press working to insert the working blade to the separator from the EVA base material side was performed. In this way, a dicing die-bonding film having a disc shape of 370 mm in diameter and having a laminated structure of EVA base material/adhesive layer/adhesive layer was formed on the separator. Then, ultraviolet rays are irradiated from the EVA substrate side to the adhesive layer in the diced tape. When irradiating ultraviolet rays, a high-pressure mercury lamp was used, and the cumulative irradiation light amount was set to 350 mJ/cm ² . The dicing and die-bonding film of Example 1 having the laminated structure of the dicing tape (EVA base material/adhesive layer) and the adhesive layer was fabricated by the above method. Examples 2 and 3 During the formation of the adhesive layer, the formulation amount of MOI was changed from 16 mol parts to 12 mol parts (Example 2) or 8 mol parts (Example 3). The dicing and die-bonding films of Examples 2 and 3 were produced in the same manner as the dicing and die-bonding films of Example 1. Example 4 (Adhesive layer) In a reaction vessel equipped with a cooling pipe, a nitrogen gas introduction pipe, a thermometer, and a stirring device, 100 mol parts of 2-ethylhexyl acrylate (2EHA) and 2-hydroxyethyl acrylate were contained (2HEA) A mixture of 20 mol parts, 0.2 parts by mass of benzyl peroxide as a polymerization initiator, and toluene as a polymerization solvent with respect to 100 parts by mass of the monomer components in a nitrogen atmosphere at 60°C under stirring for 10 hours (polymerization). Thereby, a polymer solution containing the acrylic polymer P ₃ was obtained. The weight-average molecular weight (Mw) of the acrylic polymer _P3 in the polymer solution is 400,000, the glass transition temperature is 9.5°C, and the molar ratio of the structural unit derived from 2EHA to the structural unit derived from 2HEA is 5 . Then, the mixture containing the polymer solution containing the acrylic polymer _P3 , 2-methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst was placed in Stir at room temperature for 48 hours in air (addition reaction). In the reaction solution, the formulation amount of MOI is 16 mol parts relative to 100 mol parts of the above-mentioned 2-ethylhexyl acrylate, and the MOI formulation amount is 16 mol parts relative to the structural unit derived from 2HEA in the acrylic polymer P ₃ The molar ratio of the total amount of its hydroxyl groups was 0.8. Moreover, in this reaction solution, the compounding quantity of dibutyltin dilaurate was 0.01 mass part with respect to 100 mass parts of acrylic polymer _P3 . Through this addition reaction, a polymer solution containing an acrylic polymer P ₄ having a methacrylate group in a side chain (an acrylic polymer containing a structural unit derived from an unsaturated functional group-containing isocyanate compound) is obtained. Next, 1 part by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., Ltd.) was added to the polymer solution relative to 100 parts by mass of the acrylic polymer P ₄ and 2 parts by mass of photopolymerization A starting agent (trade name "Irgacure 127", manufactured by BASF Corporation) was mixed, and the mixture was diluted with toluene so that the viscosity of the mixture at room temperature was 500 mPa·s to obtain an adhesive composition. Furthermore, except that this adhesive composition was used as an adhesive composition, the diced and die-bonded film of Example 4 was produced in the same manner as the diced and die-bonded film of Example 1. Example 5 (Adhesive layer) Using an applicator, apply the product prepared in Example 4 on the silicone release-treated surface of the PET separator (thickness 38 μm) having the silicone release-treated surface. The adhesive composition was used to form a coating film, and the coating film was desolvated at 130° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm on the PET separator. Next, using a laminating machine, a substrate made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB-0104", thickness 130 μm, Kurashiki Textile Co., Ltd.) was attached to the exposed surface of the adhesive layer at room temperature. Co., Ltd.). A dicing tape having a laminated structure of EVA base material/adhesive layer was produced by the above method. (Adhesive Layer) The PET separator was peeled off from the above-mentioned dicing tape, and the adhesive layer of the PET separator with the adhesive layer produced in Example 1 was pasted on the exposed adhesive layer. When laminating, align the center of the dicing tape with the center of the adhesive layer. Moreover, bonding was performed using a manual roll. Next, the press working to insert the working blade to the separator from the EVA base material side was performed. In this way, a dicing die-bonding film having a disc shape of 370 mm in diameter and having a laminated structure of EVA base material/adhesive layer/adhesive layer was formed on the separator. Then, ultraviolet rays are irradiated from the EVA substrate side to the adhesive layer in the diced tape. When irradiating ultraviolet rays, a high-pressure mercury lamp was used, and the cumulative irradiation light amount was set to 350 mJ/cm ² . The dicing die-bonding film of Example 5 having a laminated structure comprising a dicing tape (EVA base material/adhesive layer) and an adhesive layer was fabricated by the above method. Comparative Example 1 Comparative Example 1 was prepared in the same manner as the dicing and die-bonding film of Example 4, except that the amount of MOI was changed from 16 mol parts to 20 mol parts when forming the adhesive layer. The cut crystal sticky film. <Evaluation> The following evaluations were performed on the diced die-bonding films obtained in the Examples and Comparative Examples. The results are shown in Table 1. (Elastic modulus based on nano-indentation method) For each of the crystal-cut adhesive films obtained in the examples and comparative examples, the adhesive layer was peeled off from the adhesive layer, and the peeled surface of the adhesive layer was A rice indenter (trade name "TriboIndenter", manufactured by HYSITRON Inc.) was used to measure nanoindentation on the surface of the adhesive layer under the following conditions. Furthermore, the obtained elastic modulus is shown in Table 1. Indenter used: Berkovich (triangular pyramid type) Measurement method: Single indentation measurement Measurement temperature: 23°C Frequency: 100 Hz Indentation depth setting: 500 nm Load: 1 mN Loading speed: 0.1 mN/s Unloading speed: 0.1 mN /s Holding time: 1 s (surface roughness) For each of the crystal-cut adhesive films obtained in Examples and Comparative Examples, the adhesive layer was peeled off from the adhesive layer, and the peeling of the adhesive layer and the adhesive layer was performed The surface roughness Ra of each surface was measured. In addition, the measurement of the surface roughness was performed using the confocal laser microscope (trade name "OPTELICS H300", the lasertec Co., Ltd. make). Furthermore, each obtained surface roughness Ra and its difference are shown in Table 1. (T-type peeling test after ultraviolet curing) For each of the crystal-cut adhesive films obtained in Examples and Comparative Examples, the peeling force between the adhesive layer and the adhesive layer was measured in the following manner. First, a test piece was produced from each of the diced die-bonding films. Specifically, a backing tape (trade name "BT-315", manufactured by Nitto Denko Co., Ltd.) was attached to the adhesive layer side of the dicing die-bonding film, and the dicing die-bonding film having the backing tape was cut from the dicing die-bonding film. A test piece with a size of 50 mm in width and 120 mm in length was obtained. Furthermore, using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), a T-peel test was performed on the test piece, and the peel force (N/20 mm) was measured. In this measurement, the temperature conditions were set to 23° C., and the peeling speed was set to 300 mm/min. The measurement results are shown in Table 1. (Implementation of the expansion step and the pick-up step) Using each of the dicing and die-bonding films obtained in the examples and the comparative examples, the following lamination steps, the first expansion step (cold expansion step) for cutting, and The 2nd expansion process (normal temperature expansion process) of a space|interval, and a pick-up process. In the bonding step, the semiconductor wafer divided body held on the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) is bonded to the adhesive layer of the dicing die-bonding film, and thereafter , and the tape for wafer processing is peeled off from the semiconductor wafer divider. When bonding, a bonding machine was used, the bonding speed was set to 10 mm/sec, the temperature conditions were set to 60°C, and the pressure conditions were set to 0.15 MPa. In addition, the semiconductor wafer dividing system is prepared by forming as follows. First, for a bare wafer (12 inches in diameter, 780 μm in thickness) held together with a ring frame on a wafer processing belt (trade name "V12S-R2-P", manufactured by Nitto Denko Co., Ltd.), Tokyo Chemical Industry Co., Ltd.), on the side of one side, using a dicing device (trade name "DFD6260", manufactured by Disco Co., Ltd.), using its rotary blade to form dividing grooves (width 25 μm, depth 25 μm) for singulation 50 μm, a block of 6 mm × 12 mm grid). Next, a tape for wafer processing (trade name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) was attached to the dividing groove forming surface, and then the above-mentioned tape for wafer processing (trade name "V12S-R2-P") was attached. Peel off from wafer. Thereafter, using a back grinding device (trade name "DGP8760", manufactured by Disco Co., Ltd.), grinding was performed from the other side of the wafer (the side where the dividing grooves were not formed), whereby the wafer was thinned to a thickness of 20 Å. μm, and then, mirror polishing was performed on the ground surface by dry polishing using the same apparatus. In the above-described manner, a semiconductor wafer divided body (in a state of being held on the wafer processing belt) is formed. A plurality of semiconductor wafers (6 mm×12 mm) are contained in this semiconductor wafer division body. The cold expansion step was performed by its cold expansion unit using a wafer separator (trade name "Die Separator DDS3200", manufactured by Disco Co., Ltd.). Specifically, first, at room temperature, 12 inches in diameter was attached to the frame attaching area (around the workpiece attaching area) of the adhesive layer in the above-mentioned dicing die-bonding film with the semiconductor wafer divider. 1-inch SUS ring frame (manufactured by Disco Co., Ltd.). Then, the dicing die-bonding film is installed in an apparatus, and the dicing tape of the dicing die-bonding film with the semiconductor wafer split body is expanded by the cold expansion unit of the same apparatus. In this cold expansion step, the temperature was -15°C, the expansion rate was 100 mm/sec, and the expansion amount was 7 mm. The room temperature expansion step was performed by the room temperature expansion unit using a wafer separator (trade name "Die Separator DDS3200", manufactured by Disco Co., Ltd.). Specifically, the dicing tape of the dicing die-bonding film with the semiconductor wafer split body that has undergone the above-mentioned cold expansion step is expanded by the room-temperature expansion unit of the same device. In this room temperature expansion step, the temperature was 23° C., the expansion rate was 1 mm/sec, and the expansion amount was 10 mm. After that, heat shrinkage treatment is performed on the slicing die-bonded film that has undergone room temperature expansion. The treatment temperature was 200°C, and the treatment time was 20 seconds. In the pick-up step, a device with a pick-up mechanism (trade name "Die Bonder SPA-300", manufactured by Shinkawa Co., Ltd.) was used to attempt to pick up the singulated adhesive layer-attached semiconductor wafer on the dicing tape. Regarding this pick-up, the push-up speed of the pin member was 1 mm/sec, the push-up amount was 2000 μm, and the number of pickup evaluations was 5. In the process as described above performed using each of the dicing adhesive films obtained in the Examples and Comparative Examples, regarding the cold expansion step, the area of the bulge from the dicing band of the semiconductor wafer to which the adhesive layer was attached was 5% In the following cases, the bulge at the time of cutting was evaluated as good (◯), and when the area of the bulge was more than 5% and 40% or less, the bulge at the time of cutting was evaluated as good (Δ). Regarding the pick-up step, when all five semiconductor wafers with adhesive layers were successfully picked up from the dicing tape, the pick-up property was evaluated as good (○), and when 1 to 4 were successfully picked up, the pick-up property was evaluated. As acceptable (Δ), when there was no successful pickup, the pickup was evaluated as poor (x). These evaluation results are shown in Table 1. [Table 1]

According to the dicing adhesive films of Examples 1 to 4, in the cold expansion step, the adhesive layer can be well cut without the semiconductor wafer with the adhesive layer being raised from the dicing belt, and in the pickup step In this process, the semiconductor wafer with the adhesive layer attached can be picked up appropriately.

1‧‧‧Cut Die Adhesive Film 10‧‧‧Cut Tape 10'‧‧‧Tape 11‧‧‧Substrate 11'‧‧‧Substrate 11e‧‧‧Peripheral End 12‧‧‧Adhesive Layer 12' ‧‧‧Adhesive layer 12a‧‧‧Adhesive surface 12e‧‧‧Outer peripheral edge 20‧‧‧Adhesive layer 20'‧‧‧Adhesive film 20e‧‧‧Outer peripheral edge 21‧‧‧Adhesive layer 30a‧‧‧ Dividing groove 30b‧‧‧modified region 30A‧‧‧Semiconductor wafer 30B‧‧‧Semiconductor wafer dividing body 30C‧‧‧Semiconductor wafer 31‧‧‧Semiconductor chip 41‧‧‧ring frame 42‧‧‧holding With 43‧‧‧Push-up member 44‧‧‧Pin member 45‧‧‧Suction jig 51‧‧‧Adhered body 52‧‧‧ Bonding wire 53‧‧‧Sealing resin 60‧‧‧Cut tape 61‧‧ ‧Substrate 62‧‧‧Adhesive layer 62e‧‧‧Outer peripheral edge 70‧‧‧Chip adhesive film 70e‧‧‧Outer peripheral edge 81‧‧‧Semiconductor wafer 82‧‧‧Ring frame 83‧‧‧Spacer D ‧‧‧In-Plane Direction F‧‧‧Moving Direction R‧‧‧Irradiation Area S‧‧‧Separator T1‧‧‧Wafer Processing Tape T1a‧‧‧Adhesive Surface T2‧‧‧Wafer Processing Tape T2a‧ ‧‧Adhesive surface T3‧‧‧Tape for wafer processing T3a‧‧‧Adhesive surface W‧‧‧Semiconductor wafer Wa‧‧‧First surface Wb‧‧‧Second surface X‧‧‧Cut and die bonding film Y ‧‧‧ Die-cut sticky film

FIG. 1 is a schematic cross-sectional view of an embodiment of the diced die-bonded film of the present invention. FIG. 2 is an example of the case where the die-cut die-attached film shown in FIG. 1 has a spacer. FIGS. 3( a ) to ( e ) show an example of a method for producing the diced die-bonding film shown in FIG. 1 . FIGS. 4( a ) to ( d ) show some steps in a method of manufacturing a semiconductor device using the diced die-bonded film shown in FIG. 1 . Figures 5(a) and (b) show steps subsequent to the step shown in Figure 4 . FIGS. 6( a ) to ( c ) show steps subsequent to the steps shown in FIG. 5 . Figures 7(a) and (b) show steps subsequent to the step shown in Figure 6 . FIG. 8 shows a subsequent step to the step shown in FIG. 7 . FIGS. 9( a ) to ( c ) show steps subsequent to the steps shown in FIG. 8 . FIG. 10 shows some steps in a modification of the method for manufacturing a semiconductor device using the diced die-bond film shown in FIG. 1 . FIGS. 11( a ) and ( b ) show some steps in a modification of the method for manufacturing a semiconductor device using the diced die-bonding film shown in FIG. 1 . FIGS. 12( a ) to ( c ) show some steps in a modification of the manufacturing method of the semiconductor device using the diced die-bonding film shown in FIG. 1 . FIGS. 13( a ) and ( b ) show some steps in a modification of the manufacturing method of the semiconductor device using the diced die-bonded film shown in FIG. 1 . FIG. 14 is a schematic cross-sectional view of a conventional diced die-bonded film. FIG. 15 is a diagram showing the use of the dicing die-bonding film shown in FIG. 14 . FIG. 16 shows a supply form of the diced die-bond film shown in FIG. 14 .

10‧‧‧Cut strip

11‧‧‧Substrate

11e‧‧‧Peripheral end

12‧‧‧Adhesive layer

12a‧‧‧Adhesive surface

12e‧‧‧Peripheral end

20‧‧‧Adhesive layer

20e‧‧‧Peripheral end

D‧‧‧In-plane direction

R‧‧‧Irradiated area

X‧‧‧Cut Die Adhesive Film

Claims (10)

A dicing die-bonding film comprising: a dicing tape having a laminated structure comprising a base material and an adhesive layer, and an adhesive layer releasably adhering to the above-mentioned adhesive layer in the above-mentioned dicing tape, and the above-mentioned adhesive The elastic modulus of the surface of the agent layer is 0.1-20 MPa when indented at 500 nm by the nano-indentation method at a temperature of 23° C. and a frequency of 100 Hz. The crystal-cut adhesive film of claim 1, wherein the above-mentioned adhesive layer is a radiation-hardening adhesive layer, and in the T-type peel test under the conditions of a temperature of 23° C. and a peeling speed of 300 mm/min, the above-mentioned adhesive layer after radiation hardening The peeling force between the adhesive layer and the above-mentioned adhesive layer is 0.06-0.25 N/20 mm. The dicing die-bonding film of claim 1 or 2, wherein in the T-type peel test under the conditions of a temperature of 23° C. and a peeling speed of 300 mm/min, between the adhesive layer and the adhesive layer before radiation curing The peeling force is above 2 N/20 mm. The crystal-cut die-bonding film of claim 1 or 2, wherein the surface roughness Ra of the surface of the adhesive layer and the surface roughness Ra of the surface of the adhesive layer in the contact surface between the adhesive layer and the adhesive layer are the same as the surface roughness Ra of the surface of the adhesive layer. The difference is 100 nm or less. The crystal-cut die-bonding film of claim 1 or 2, wherein the adhesive layer contains a first acrylic polymer, and the first acrylic polymer contains (meth)acrylic acid derived from an alkyl group having 10 or more carbon atoms Structural units of esters and structural units derived from 2-hydroxyethyl (meth)acrylate. The slicing die-bonding film of claim 5, wherein the structural unit derived from (meth)acrylate having an alkyl group having a carbon number of 10 or more in the first acrylic polymer is relative to (meth)acrylic acid derived The molar ratio of the structural unit of 2-hydroxyethyl ester is 1-40. The crystal-cut adhesive film of claim 5 or 6, wherein the first acrylic polymer comprises a structural unit derived from an unsaturated functional group-containing isocyanate compound, and the first acrylic polymer in the first acrylic polymer is derived from an unsaturated functional group-containing isocyanate compound. The molar ratio of the structural unit of the functional group isocyanate compound with respect to the structural unit derived from 2-hydroxyethyl (meth)acrylate is 0.1 to 2. According to claim 1 or 2, the crystal-cut adhesive film, wherein the adhesive force of the adhesive layer to SUS under the conditions of temperature 23°C, peeling speed 300 mm/min, and angle 180° is 0.1-20 N/10 mm. The dicing die-bonding film according to claim 1 or 2, wherein the storage elastic modulus of the adhesive layer at 23° C. is 100-4000 MPa. The dicing die-bonding film of claim 1 or 2, wherein the outer peripheral end of the adhesive layer is within 1000 μm of the outer peripheral end of the adhesive layer in the film in-plane direction.

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