JP2018182275A - Dicing die-bonding film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dicing die-bonding film which is suitable for materialization of good pickup of an adhesive layer-attached semiconductor chip from a dicing tape.SOLUTION: A dicing die-bonding film X of the present invention comprises: a dicing tape 10; and an adhesive layer 20. The dicing tape 10 has a laminate structure including a base material 11 and a sticker layer 12. The adhesive layer 20 is put in close contact with the sticker layer 12 peelably. A surface 12a of the sticker layer 12 and a surface 20a of the adhesive layer 20, which form an interface of the sticker layer 12 and the adhesive layer 20, can make a surface free energy difference of 3.5 mJ/mor more.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a dicing die bond film which can be used in the manufacturing process of a semiconductor device.

  In the process of manufacturing a semiconductor device, a dicing die bond film may be used to obtain a semiconductor chip with an adhesive film of a chip equivalent size for die bonding, that is, a semiconductor chip with an adhesive layer for die bonding. . The dicing die-bonding film has a size corresponding to the semiconductor wafer to be processed, and for example, a dicing tape comprising a substrate and an adhesive layer, and a die-bonding film peelably adhered to the adhesive layer side Agent layer).

  As one of methods for obtaining a semiconductor chip with an adhesive layer using a dicing die bond film, a method is known which involves a process of expanding a dicing tape in the dicing die bond film and cleaving the die bond film. In this method, first, a semiconductor wafer is bonded onto a die bond film of a dicing die bond film. The semiconductor wafer is, for example, processed so as to be cut later together with the cutting of the die bonding film so as to be separated into a plurality of semiconductor chips. Next, an expanding device is used to cut the die-bonding film so that a plurality of adhesive film pieces (adhesive layers) in close contact with the semiconductor chip are generated from the die-bonding film on the dicing tape. The dicing tape is expanded (an expanding step for cutting). In this expanding step, cutting also occurs in the semiconductor wafer on the die bonding film at a location corresponding to the cutting location in the die bonding film, and the semiconductor wafer is separated into a plurality of semiconductor chips on the dicing die bonding film or dicing tape. Next, in order to increase the distance between the plurality of adhesive layer-provided semiconductor chips after cutting on the dicing tape, another expanding step is performed (a separation expanding step). Next, for example, after passing through the cleaning process, each semiconductor chip with the adhesive layer on the dicing tape is picked up from the dicing tape after being pushed up from the lower side of the dicing tape by the pin member of the pickup mechanism. Pick-up process). At this time, the adhesive layer in the semiconductor chip with an adhesive layer to be picked up needs to be properly peeled off from the adhesive layer of the dicing tape. As described above, a semiconductor chip with a die-bonding film or adhesive layer is obtained. The semiconductor chip with an adhesive layer is fixed by die bonding to an adherend such as a mounting substrate via the adhesive layer. For example, about the technique regarding the dicing die-bonding film used as mentioned above, it describes in the following patent documents 1-3, for example.

JP 2007-2173 A JP, 2010-177401, A JP, 2012-23161, A

  FIG. 14 shows a dicing die bond film Y, which is an example of a dicing die bond film, in a schematic cross-sectional view thereof. The dicing die bond film Y is composed of a dicing tape 60 and a die bond film 70. The dicing tape 60 has a laminated structure of a base material 61 and an adhesive layer 62 that exerts an adhesive force. The die-bonding film 70 is in close contact with the pressure-sensitive adhesive layer 62 by the adhesive force of the pressure-sensitive adhesive layer 62. Such a dicing die bond film Y has a disk shape of a size corresponding to a semiconductor wafer which is a processing target in the manufacturing process of a semiconductor device, that is, a workpiece, and can be used in the above-mentioned expanding step. For example, as shown in FIG. 15, in the state where the semiconductor wafer 81 is bonded to the die bond film 70 and the ring frame 82 is bonded to the adhesive layer 62, the expanding step is performed. The ring frame 82 is a frame member with which a transport mechanism such as a transport arm provided in the expand device mechanically abuts at the time of workpiece transport in a state of being attached to the dicing die bond film Y. The dicing die bond film Y is designed such that such a ring frame 82 can be fixed to the film by the adhesive force of the adhesive layer 62 of the dicing tape 60. That is, the dicing die-bonding film Y has a conventional design in which a ring frame member attaching area is secured around the die bonding film 70 in the adhesive layer 62 of the dicing tape 60. In such a design, the separation distance between the outer peripheral end 62 e of the pressure-sensitive adhesive layer 62 and the outer peripheral end 70 e of the die bond film 70 in the film in-plane direction is about 10 to 30 mm.

  On the other hand, in the case of a dicing die bond film including a dicing tape and a die bond film on the adhesive layer, the dicing tape or the adhesive layer and the die bond film have the same design dimensions in the film in-plane direction. Since the die bond film needs to take on the ring frame holding function, it is necessary to ensure the adhesion to the ring frame. In order to ensure the ring frame adhesion of the die bond film, the die bond film is made, for example, lower in elasticity than the die bond film 70 in the dicing die bond film Y described above. However, this reduction in elasticity tends to cause an increase in peeling force required to peel the die-bonding film from the pressure-sensitive adhesive layer of the dicing tape. In order to realize good pick-up of the semiconductor chip with an adhesive layer in the above-mentioned pick-up process, it is preferable that the peeling force between the pressure-sensitive adhesive layer of the dicing tape and the die bond film be small.

  As mentioned above, in the dicing die bond film, technical difficulty may be accompanied in order to realize a good pick-up of the semiconductor chip with an adhesive layer from a dicing tape. The present invention has been conceived under such circumstances, and it is an object of the present invention to provide a dicing die bond film suitable for realizing good pickup of a semiconductor chip with an adhesive layer from a dicing tape. , To aim.

The dicing die bond film provided by the present invention comprises a dicing tape and an adhesive layer. The dicing tape has a laminated structure including a substrate and an adhesive layer. The adhesive layer peelably adheres to the pressure-sensitive adhesive layer in the dicing tape. The surface of the adhesive layer and the surface of the pressure-sensitive adhesive layer for forming an interface between the dicing tape pressure-sensitive adhesive layer and the adhesive layer thereon can generate a surface free energy difference of 3.5 mJ / m ² or more. That is, the surface free energy (first surface free energy) of the adhesive layer surface and the surface free energy of the adhesive layer surface on the adhesive layer surface and the adhesive layer surface forming the interface between the adhesive layer and the adhesive layer The present dicing die-bonding film has a configuration in which the difference with (the second surface free energy) can be 3.5 mJ / m ² or more, or can be 3.5 mJ / m ² or more. For example, in the case where the pressure-sensitive adhesive layer of the dicing tape is a curable pressure-sensitive adhesive layer such as a radiation-curable pressure-sensitive adhesive layer, the first surface free energy in the adhesive layer and the second in the pressure-sensitive adhesive layer after curing. The present dicing die bond film is configured such that the difference with the surface free energy is 3.5 mJ / m ² or more. In the present invention, the above-mentioned surface free energy difference is preferably 4 mJ / m ² or more, more preferably 5 mJ / m ² or more. The dicing die bond film of the above constitution can be used to obtain a semiconductor chip with an adhesive layer in the process of manufacturing a semiconductor device.

In the process of manufacturing a semiconductor device, as described above, in order to obtain a semiconductor chip with an adhesive layer, an expanding process or a picking process may be performed in which a dicing die bonding film is used. In the pickup step, it is necessary that the adhesive layer in the semiconductor chip with an adhesive layer be peeled off from the adhesive layer of the dicing tape so that the semiconductor chip can be picked up from the dicing tape. The difference between the first and second surface free energy at the interface between the adhesive layer of the present dicing die bond film and the dicing tape adhesive layer is 3.5 mJ / m ² or more, preferably 4 mJ / m ² or more, more preferably The inventors of the present invention have obtained the finding that the condition that is not less than 5 mJ / m ² is suitable for realizing a good pickup in the pickup step. Specifically, it is as shown in the following Examples and Comparative Examples. As the difference between the surface free energy on the surface of the adhesive layer and the surface free energy on the surface of the adhesive layer increases at the interface between the adhesive layer and the adhesive layer, the transfer of the constituent material between the two layers is less likely to occur. Further, the fact that the transition of the constituent material between the adhesive layer and the pressure-sensitive adhesive layer does not easily occur is suitable for achieving a small peeling force between both layers, and in the case where the elasticity of the adhesive layer is reduced, for example, It is suitable for suppressing an increase in peeling force between the adhesive layer and the pressure-sensitive adhesive layer while securing the adhesive force of the adhesive layer to the frame member by the low elasticity. The difference between the first and second surface free energy at the interface between the adhesive layer and the pressure-sensitive adhesive layer is 3.5 mJ / m ² or more, preferably 4 mJ / m ² or more, more preferably 5 mJ / m ² or more The above-mentioned configuration is suitable for securing a small peeling force between the adhesive layer and the adhesive layer to such an extent that a good pickup of the semiconductor chip with an adhesive layer can be realized in the pickup step. is there.

  This material is suitable for reducing the elasticity of the adhesive layer and ensuring the adhesion of the adhesive layer to the frame member while suppressing the increase in the peeling force between the adhesive layer and the dicing tape adhesive layer. In the dicing die bond film, the dicing tape or the pressure-sensitive adhesive layer thereof and the adhesive layer thereon are substantially formed in the in-plane direction of the film so that the adhesive layer includes the frame affixing area in addition to the work affixing area. Suitable for designing with the same dimensions. In this dicing die bond film, for example, in the film in-plane direction, it is possible to adopt a design in which the outer peripheral edge of the adhesive layer is within a distance of 1000 μm from each outer peripheral edge of the dicing tape substrate or adhesive layer is there. The dicing die-bonding film of such a configuration is one of processing for forming a dicing tape having a laminated structure of a base material and an adhesive layer, and processing for forming an adhesive layer. It is suitable to carry out collectively by processing such as punching processing.

  In the manufacturing process of the above-mentioned dicing die bond film Y, in order to form a processing step (first processing step) for forming a dicing tape 60 of a predetermined size and shape, and a die bond film 70 of a predetermined size and shape The second processing step (second processing step) is required as a separate step. In the first processing step, for example, a predetermined separator, a base material layer to be formed into the base material 61, and an adhesion formed to be formed into the pressure-sensitive adhesive layer 62 between them. The laminated sheet body having a laminated structure with the agent layer is subjected to a process in which the processing blade is pushed from the side of the base layer to the separator. The pressure-sensitive adhesive layer to be formed into the pressure-sensitive adhesive layer 62 is formed through the application of the pressure-sensitive adhesive composition on the separator and the subsequent drying. By the first processing step, a dicing tape 60 having a laminated structure of the adhesive layer 62 on the separator and the base 61 is formed on the separator. In the second processing step, for example, for a laminated sheet body having a laminated structure of a predetermined separator and an adhesive layer to be formed into a die bond film 70, from the adhesive layer side to the separator Processing is performed to make the processing blade plunge. The adhesive layer to be formed into the die bond film 70 is formed through application of the adhesive composition on the separator and subsequent drying. By the second processing step, the die bond film 70 is formed on the separator. The dicing tape 60 and the die bond film 70 thus formed in separate steps are then laminated while being aligned. The dicing die-bonding film Y with the separator 83 which covers the die-bonding film 70 surface and the adhesive layer 62 surface in FIG. 16 is shown.

On the other hand, the dicing die-bonding film of the present invention when the dicing tape or the adhesive layer thereof and the adhesive layer which is the die-bonding film thereon have substantially the same design dimensions in the film in-plane direction is, for example, It can be manufactured as follows. First, an adhesive composition layer is formed on a predetermined separator by coating a composition for forming an adhesive layer. Next, a pressure-sensitive adhesive composition layer is formed on the adhesive composition layer by coating a composition for forming a dicing tape pressure-sensitive adhesive layer. Next, through simultaneous drying of these composition layers, an adhesive layer and a pressure-sensitive adhesive layer are formed on the separator. Next, a base material for dicing tape is attached to the exposed surface of the pressure-sensitive adhesive layer. Next, the laminated sheet body having a laminated structure of the separator, the adhesive layer, the pressure-sensitive adhesive layer, and the base is subjected to processing for causing the processing blade to project from the side of the base to the separator. Thereby, a dicing die-bonding film of a predetermined size and shape having a laminated structure of the adhesive layer, the pressure-sensitive adhesive layer and the substrate on the separator is formed on the separator. The dicing die-bonding film of the present invention in the case where the dicing tape or the pressure-sensitive adhesive layer and the adhesive layer thereon have substantially the same design dimensions in the film in-plane direction has a laminated structure of the substrate and the pressure-sensitive adhesive layer. It is suitable for carrying out the processing for forming a dicing tape having the above and the processing for forming an adhesive layer together in a processing such as a punching process. Such a present dicing die bond film is suitable for efficient production from the viewpoint of reduction of the number of production steps and production cost control. Moreover, the above-mentioned manufacturing method through lamination formation of the composition for adhesive layer formation and the composition for dicing tape adhesive layer formation, and collective drying of both composition layers is a dicing tape adhesive layer and an adhesive bond layer. Although it is more likely to cause an increase in peel strength between the dicing tape adhesive layer and the adhesive layer than a manufacturing method in which the adhesive layer and the adhesive layer are bonded together, the adhesive layer and the dicing tape adhesive The difference between the first and second surface free energies associated with the layer interface is 3.5 mJ / m ² or more as described above, preferably 4 mJ / m ² or more, more preferably 5 mJ / m ² or more The above configuration in the present invention secures a small peeling force between the adhesive layer and the adhesive layer to such an extent that good pickup of the semiconductor chip with an adhesive layer can be realized in the pickup step. Suitable for

  As mentioned above, the dicing die-bonding film of the present invention is suitable for realizing a good pick-up of the semiconductor chip with an adhesive layer from a dicing tape.

From the viewpoint of securing the above-mentioned small peeling force between the dicing tape pressure-sensitive adhesive layer and the adhesive layer of the present dicing die-bonding film, the dicing tape pressure-sensitive adhesive layer is formed on the surface which forms an adhesive interface with the adhesive layer. The surface free energy (second surface free energy) is preferably configured to be 32 mJ / m ² or less, more preferably 30 mJ / m ² or less, more preferably 28 mJ / m ² or less. When the dicing tape pressure-sensitive adhesive layer is a curable pressure-sensitive adhesive layer such as a radiation-curable pressure-sensitive adhesive layer, the second surface free energy in the pressure-sensitive adhesive layer after curing is preferably 32 mJ / m ² or less, more Preferably it is 30 mJ / m ² or less, more preferably 28 mJ / m ² or less. In addition, from the viewpoint of securing appropriate adhesion between the dicing tape adhesive layer and the adhesive layer so that peeling does not occur between the dicing tape adhesive layer and the adhesive layer during transport of the dicing die bond film, the dicing tape adhesive layer, the surface forming the bonding interface between the adhesive layer, preferably 15 mJ / m ² or more, more preferably 18 mJ / m ² or more, more preferably 20 mJ / m ² or more surface free energy (free second surface Energy) is configured. When the dicing tape pressure-sensitive adhesive layer is a curable pressure-sensitive adhesive layer such as a radiation-curable pressure-sensitive adhesive layer, the second surface free energy in the pressure-sensitive adhesive layer after curing is preferably 15 mJ / m ² or more. Preferably it is 18 mJ / m ² or more, more preferably 20 mJ / m ² or more.

The first surface free energy in the adhesive layer of the present dicing die bond film is preferably 30 mJ from the viewpoint of securing the adhesion required between the adhesive layer and the dicing tape adhesive layer in the dicing die bond film. / m ² or more, more preferably 31 mJ / m ² or more, more preferably 32 mJ / m ² or more. Also, from the viewpoint of securing the above-mentioned small peeling force between the adhesive layer and the pressure-sensitive adhesive layer, the first surface free energy is preferably 45 mJ / m ² or less, more preferably 43 mJ / m ^2. Or less, more preferably 40 mJ / m ² or less.

  The adhesive layer of the present dicing die bond film preferably has a thickness of 0.1 N / 10 mm or more, more preferably 0.1 N / 10 mm or more with respect to the SUS plane in a peeling test under conditions of 23 ° C., peeling angle 180 ° and tensile speed 10 mm / min. It exhibits a 180 ° peel adhesion of 3 N / 10 mm or more, more preferably 0.5 N / 10 mm or more. The said structure regarding the adhesive force of an adhesive bond layer is suitable in order to ensure holding | maintenance of the flame | frame member by this dicing die-bonding film. In addition, this adhesive layer exhibits a 180 ° peel adhesive strength of preferably 20 N / 10 mm or less, more preferably 10 N / 10 mm or less, to the SUS plane in a peel test under the same conditions. The said structure regarding the adhesive force of an adhesive bond layer is suitable in order to ensure the releasability of the flame | frame member from this dicing die-bonding film.

  The adhesive layer of this dicing die-bonding film has an initial chuck distance of 10 mm, a frequency of 10 Hz, a dynamic strain of ± 0.5 μm, and a heating rate of 5 ° C./min for an adhesive layer sample piece of 4 mm wide and 80 μm thick The tensile storage elastic modulus at 23 ° C. measured by is preferably 100 MPa or more, more preferably 500 MPa or more, more preferably 1000 MPa or more. The configuration relating to the tensile storage elastic modulus of the adhesive layer is suitable for securing the adhesive force of the adhesive layer to the frame member, and thus suitable for securing the retention of the frame member by the present dicing die bond film. . Further, the adhesive layer preferably has a tensile storage modulus at 23 ° C. measured under the same conditions of 4000 MPa or less, more preferably 3000 MPa or less, more preferably 2000 MPa or less. The said structure regarding the tensile storage elastic modulus of an adhesive bond layer is suitable in order to ensure the releasability of the flame | frame member from this dicing die-bonding film.

  In the present dicing die bond film, the dicing tape pressure-sensitive adhesive layer is preferably a radiation-curable pressure-sensitive adhesive layer, and a pressure-sensitive adhesive layer after radiation curing in a T-peel test under conditions of 23 ° C. and a peeling speed of 300 mm / min. The peeling force between the adhesive layer and the adhesive layer is preferably 0.06 N / 20 mm or more, more preferably 0.1 N / 20 mm or more, more preferably 0.15 N / 20 mm or more. Such a configuration is suitable for securing the adhesion between the pressure-sensitive adhesive layer and the adhesive layer thereon after curing of the dicing tape, and therefore, the dicing tape pressure-sensitive adhesive layer in use of the present dicing die-bonding film In the case where the expanding step is performed after the curing of the above, it is preferable in the step to suppress the occurrence of partial peeling, that is, floating, from the adhesive layer of the semiconductor chip with an adhesive layer. The peel strength between the pressure-sensitive adhesive layer and the adhesive layer after radiation curing in a T-peel test under conditions of 23 ° C. and a peel speed of 300 mm / min is preferably 0.25 N / 20 mm or less, more preferably Is 0.23 N / 20 mm or less, more preferably 0.2 N / 20 mm or less. Such a configuration is suitable for achieving good pick-up of the semiconductor chip with an adhesive layer from the pressure-sensitive adhesive layer after curing in a pickup step performed after the dicing tape pressure-sensitive adhesive layer is cured.

  In the present dicing die bond film, the dicing tape pressure-sensitive adhesive layer is preferably a radiation-curable pressure-sensitive adhesive layer, and a pressure-sensitive adhesive layer before radiation curing in a T-peel test under conditions of 23 ° C. and peeling speed 300 mm / min. The peeling force between the adhesive layer and the adhesive layer is preferably 2N / 20 mm or more. Such a configuration is suitable for securing the adhesion between the uncured pressure-sensitive adhesive layer of the dicing tape and the adhesive layer thereon, and therefore, the pressure-sensitive adhesive of the dicing tape in using the present dicing die-bonding film In the case where the expanding step is performed in a state where the layer is not cured, this step is suitable for suppressing the occurrence of partial peeling, that is, floating, from the adhesive layer of the semiconductor chip with an adhesive layer.

  The difference in arithmetic average surface roughness (Ra) of both surfaces of the pressure-sensitive adhesive layer surface and the adhesive layer surface for forming an interface between the dicing tape pressure-sensitive adhesive layer and the adhesive layer in the present dicing die-bonding film is preferably 100 nm or less It is. Such a configuration is suitable for securing the adhesion between the dicing tape adhesive layer and the adhesive layer thereon, and accordingly, in the expanding step, the adhesive layer of the semiconductor chip with adhesive layer is used. It is suitable for suppressing the occurrence of partial peeling or floating.

  The pressure-sensitive adhesive layer in the present dicing die-bonding film is an acrylic type containing a first unit derived from an alkyl (meth) acrylate having an alkyl group having 10 or more carbon atoms and a second unit derived from 2-hydroxyethyl (meth) acrylate. It is preferred to contain a polymer. "(Meth) acrylate" shall mean "acrylate" and / or "methacrylate". The structure in which the acrylic polymer in the pressure-sensitive adhesive layer contains a unit derived from an alkyl (meth) acrylate having an alkyl group having 10 or more carbon atoms and a unit derived from 2-hydroxyethyl (meth) acrylate is a dicing tape Suitable for achieving high shear adhesion between the pressure sensitive adhesive layer and the adhesive layer thereon, thus appropriately cutting force on the adhesive layer on the dicing tape expanded in the in-plane direction in the expanding step It is suitable to act and cause the adhesive layer to break.

  In the acrylic polymer in the pressure-sensitive adhesive layer in the present dicing die-bonding film, the molar ratio of the above first unit to the above second unit is preferably 1 or more, more preferably 3 or more, more preferably 5 or more. Such a configuration suppresses the bonding interaction acting in the laminating direction between the dicing tape adhesive layer and the adhesive layer thereon while securing high shear adhesion as described above. It is preferable in view of the above, thus contributing to the realization of a good pickup in the pickup process. Further, the molar ratio is preferably 40 or less, more preferably 35 or less, and more preferably 30 or less. Such a configuration ensures the adhesion between the dicing tape adhesive layer and the adhesive layer, and causes partial exfoliation, ie, lifting, from the adhesive layer of the semiconductor chip with an adhesive layer in the expanding step. It is suitable for suppression.

  The acrylic polymer in the pressure-sensitive adhesive layer in the present dicing die-bonding film is preferably an addition adduct of an unsaturated functional group-containing isocyanate compound which is a radiation polymerizable component. In this case, the molar ratio of the unsaturated functional group-containing isocyanate compound to the second unit derived from 2-hydroxyethyl (meth) acrylate in the acrylic polymer is preferably 0.1 or more, more preferably 0.2 or more, more preferably Is 0.3 or more. These constitutions are suitable for appropriately increasing the elasticity of the pressure-sensitive adhesive layer through the reaction of the acrylic polymer and the unsaturated functional group-containing isocyanate compound, and contribute to the good cleavage of the adhesive layer in the expanding step. In addition, from the viewpoint of reduction of low molecular weight components in the pressure-sensitive adhesive layer after curing, the acrylic polymer for forming an adduct of the acrylic polymer with the addition of the unsaturated functional group-containing isocyanate compound and the unsaturated functional group-containing isocyanate In the reaction composition containing the compound, the molar ratio of the unsaturated functional group-containing isocyanate compound to the 2-hydroxyethyl (meth) acrylate-derived unit (second unit) of the acrylic polymer is preferably 2 or less, more preferably Is 1.5 or less, more preferably 1.3 or less.

It is a cross-sectional schematic diagram of the dicing die-bonding film which concerns on one Embodiment of this invention. It represents an example of the case where the dicing die bond film shown in FIG. 1 is accompanied by a separator. 7 illustrates an example of a method of manufacturing a dicing die bond film shown in FIG. 7 illustrates a part of steps in a semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used. 7 represents a step following the step shown in FIG. 7 represents a step following the step shown in FIG. 7 represents a step following the step shown in FIG. 7 represents a step following the step shown in FIG. 10 represents a step following the step shown in FIG. FIG. 7 illustrates a part of steps in a variation of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used. FIG. 7 illustrates a part of steps in a variation of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used. FIG. 7 illustrates a part of steps in a variation of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used. FIG. 7 illustrates a part of steps in a variation of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used. It is a cross-sectional schematic diagram of the conventional dicing die-bonding film. Fig. 15 illustrates a usage of the dicing die bond film shown in Fig. 14. 17 illustrates one supply form of a dicing die bond film shown in FIG.

  FIG. 1 is a schematic cross-sectional view of a dicing die bond film X according to one embodiment of the present invention. The dicing die bond film X can be used, for example, in an expanding step as described later in the process of obtaining a semiconductor chip with an adhesive layer in the manufacture of a semiconductor device, and includes the dicing tape 10 and the adhesive layer 20 It has a laminated structure. The dicing die bond film X has a disk shape having a size corresponding to the semiconductor wafer to be processed in the process of manufacturing the semiconductor device, and the diameter thereof is, for example, within the range of 345 to 380 mm (12 inch wafer compatible type) , In the range of 245 to 280 mm (8 inch wafer compatible type), in the range of 195 to 230 mm (6 inch wafer compatible type), or in the range of 495 to 530 mm (18 inch wafer compatible type).

In the dicing die bond film X, the dicing tape 10 has a laminated structure including the substrate 11 and the pressure-sensitive adhesive layer 12. The adhesive layer 12 has an adhesive surface 12 a on the adhesive layer 20 side. Adhesive layer 20 has surfaces 20a and 20b, includes a work affixing area and a frame member affixing area on the side of surface 20a, and is a surface with respect to adhesive layer 12 of dicing tape 10 or adhesive surface 12a thereof. It is in close contact with the 20b side in a peelable manner. The adhesive surface 12a of the adhesive layer 12 and the surface 20b of the adhesive layer 20 form an interface between the two layers. In addition, the difference between the surface free energy (first surface free energy) of the surface 20b of the adhesive layer 20 and the surface free energy (second surface free energy) of the adhesive surface 12a of the adhesive layer 12 is 3.5 mJ /. The structure having m ² or more, preferably 4 mJ / m ² or more, more preferably 5 mJ / m ² or more, or the surface free energy difference is 3.5 mJ / m ² or more, preferably 4 mJ / m ² or more The dicing die-bonding film X has a configuration that can preferably reach 5 mJ / m ² or more. In the present invention, each surface free energy of the adhesive layer surface and the pressure-sensitive adhesive layer surface is water (H ₂ O) which contacts the target surface for which identification of the surface free energy is required under the condition of 20 ° C. and relative humidity 65%. Using the values of contact angles θw and θi measured using a contact angle meter for each droplet of water and methylene iodide (CH ₂ I ₂ ), Journal of Applied Polymer Science, vol. 13, p 1741-1747 ( The value γs (= γs ^d + γs ^h ) obtained by adding together γs ^d (dispersion force component of surface free energy) and γs ^h (hydrogen bonding force component of surface free energy) determined according to the method described in 1969) . Specifically, the method of deriving the surface free energy γs is as described later with reference to the examples.

  The base material 11 of the dicing tape 10 is an element functioning as a support in the dicing tape 10 to the dicing die bond film X. For example, a plastic substrate (particularly, a plastic film) can be suitably used as the substrate 11. Examples of the constituent material of the plastic base include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenyl sulfide, Aramid, fluororesin, cellulose resin, and silicone resin are mentioned. Examples of the polyolefin include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, polymethylpentene, Ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer Coalescence is mentioned. Polyesters include, for example, polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The substrate 11 may be made of one type of material, or may be made of two or more types of materials. The substrate 11 may have a single layer structure or a multilayer structure. When the substrate 11 is a plastic film, it may be a non-oriented film, a uniaxially stretched film, or a biaxially stretched film. When the pressure-sensitive adhesive layer 12 on the substrate 11 is of the ultraviolet curing type as described later, it is preferable that the substrate 11 have ultraviolet transparency.

  When the dicing tape 10 to the substrate 11 is shrunk by, for example, partial heating in the process of using the dicing die bond film X, the substrate 11 preferably has heat shrinkability. From the viewpoint of securing good heat shrinkability in the substrate 11, the substrate 11 preferably contains an ethylene-vinyl acetate copolymer as the main component. The main component of the substrate 11 is a component that occupies the largest mass ratio in the components of the substrate. When the substrate 11 is made of a plastic film, the substrate 11 is preferably a biaxially stretched film in order to achieve isotropic heat shrinkability of the dicing tape 10 to the substrate 11. The heat shrinking ratio in the heat treatment test performed under the conditions of a heating temperature of 100 ° C. and a heating treatment time of 60 seconds is preferably 2 to 30%, more preferably 2 to 25%, in the dicing tape 10 to the substrate Preferably it is 3 to 20%, more preferably 5 to 20%. The thermal contraction rate refers to at least one of so-called thermal contraction rate in the MD direction and thermal contraction rate in the so-called TD direction.

  The surface on the side of the pressure-sensitive adhesive layer 12 in the substrate 11 may be subjected to physical treatment, chemical treatment, or undercoating treatment in order to enhance adhesion with the pressure-sensitive adhesive layer 12. Physical treatments include, for example, corona treatment, plasma treatment, sandmat treatment, ozone exposure treatment, flame exposure treatment, high piezoelectric bombardment treatment, and ionizing radiation treatment. Chemical treatments include, for example, chromic acid treatment. The treatment for enhancing the adhesion is preferably performed on the entire surface of the substrate 11 on the pressure-sensitive adhesive layer 12 side.

  The thickness of the substrate 11 is preferably 40 μm or more, preferably 50 μm or more, more preferably from the viewpoint of securing the strength for the substrate 11 to function as a support in the dicing tape 10 to the dicing die bond film X. It is 55 μm or more, more preferably 60 μm or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape 10 to the dicing die bond film X, the thickness of the substrate 11 is preferably 200 μm or less, more preferably 180 μm or less, more preferably 150 μm or less .

  The pressure-sensitive adhesive layer 12 of the dicing tape 10 contains a pressure-sensitive adhesive. The pressure-sensitive adhesive may be a pressure-sensitive adhesive capable of intentionally reducing the adhesive strength by an external action such as radiation irradiation or heating (adhesive reduction type pressure-sensitive adhesive), or an adhesive depending on the external action. It may be a pressure-sensitive adhesive (tackless non-reducing pressure-sensitive adhesive) with little or no reduction in force. As to whether the pressure-sensitive adhesive or pressure-sensitive adhesive is used as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, the individual pieces of the semiconductor chip separated into pieces using the dicing die bond film X Depending on the use mode of dicing die bond film X, such as the method and conditions of conversion, it can select suitably.

  When using an adhesive force-reducing type adhesive as the adhesive in the adhesive layer 12, in the process of using the dicing die bond film X, the adhesive layer 12 exhibits relatively high adhesive strength and relatively low adhesive strength. It is possible to use properly the state shown. For example, when the dicing die bond film X is used in the expanding step described later, the high adhesive strength state of the pressure-sensitive adhesive layer 12 is used to suppress or prevent the floating or peeling of the adhesive layer 20 from the pressure-sensitive adhesive layer 12 On the other hand, in order to make it easy to pick up the semiconductor chip with the adhesive layer from the adhesive layer 12 in the later mentioned pickup process for picking up the semiconductor chip with the adhesive layer from the dicing tape 10 of the dicing die bond film X thereafter. It is possible to utilize the low adhesion state of the pressure-sensitive adhesive layer 12.

  Examples of such an adhesive force-reducing pressure-sensitive adhesive include a radiation-curable pressure-sensitive adhesive (a radiation-curable pressure-sensitive adhesive) and a heat-foaming pressure-sensitive adhesive. In the pressure-sensitive adhesive layer 12 of the present embodiment, one kind of adhesion-reduced pressure-sensitive adhesive may be used, or two or more kinds of adhesion-reduced pressure-sensitive adhesives may be used. In addition, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 12 has a pressure-sensitive adhesive And the other part may be formed from a non-adhesive force reducing adhesive. In addition, when the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers forming the laminated structure may be formed of an adhesive force-reducing pressure-sensitive adhesive, or a part of the layers in the laminated structure is an adhesive force-reducing pressure-sensitive adhesive It may be formed from

  As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, a pressure-sensitive adhesive of a type which is cured by irradiation of electron beam, ultraviolet light, α-ray, β-ray, γ-ray or X-ray can be used. A curing type pressure sensitive adhesive (ultraviolet curable pressure sensitive adhesive) can be particularly suitably used.

  The radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is, for example, a radiation-polymerizable monomer having a base polymer such as an acrylic pressure-sensitive adhesive, an acrylic polymer, and a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples thereof include additive-type radiation-curable pressure-sensitive adhesives containing components and oligomer components.

  The above-mentioned acrylic polymer preferably contains monomer units derived from acrylic acid ester and / or methacrylic acid ester as the largest monomer unit in mass ratio. "(Meth) acrylic" shall mean "acrylic" and / or "methacrylic".

  Examples of (meth) acrylic acid esters for forming monomer units of acrylic polymers include hydrocarbon groups such as (meth) acrylic acid alkyl esters, (meth) acrylic acid cycloalkyl esters, and (meth) acrylic acid aryl esters. Included (meth) acrylic acid esters. Examples of (meth) acrylic acid alkyl esters include methyl ester of (meth) acrylic acid, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, iso Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (ie lauryl ester), tridecyl ester, tetradecyl ester Hexadecyl ester, octadecyl ester, and eicosyl ester. Examples of (meth) acrylic acid cycloalkyl esters include cyclopentyl and cyclohexyl esters of (meth) acrylic acid. Examples of (meth) acrylic acid aryl esters include phenyl (meth) acrylate and benzyl (meth) acrylate. As a (meth) acrylic acid ester for forming a monomer unit of an acrylic polymer, one (meth) acrylic acid ester may be used, or two or more (meth) acrylic acid esters may be used . Among the above, as the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer, an alkyl (meth) acrylate having 10 or more carbon atoms in the alkyl group is preferable, and lauryl (meth) acrylate is more preferable. Further, in order to properly express the adhesive layer 12 with basic properties such as adhesiveness due to (meth) acrylic acid ester, the ratio of (meth) acrylic acid ester in all monomer components for forming the acrylic polymer Preferably, it is 40 mass% or more, More preferably, it is 60 mass% or more.

  The acrylic polymer may contain a monomer unit derived from another monomer copolymerizable with (meth) acrylic acid ester in order to modify its cohesion and heat resistance. As such other monomers, for example, functional groups such as carboxy group-containing monomer, acid anhydride monomer, hydroxy group-containing monomer, glycidyl group-containing monomer, sulfonic acid group-containing monomer, phosphoric acid group-containing monomer, acrylamide, acrylonitrile and the like Group-containing monomers are mentioned. Examples of carboxy group-containing monomers include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid. Anhydride monomers include, for example, maleic anhydride and itaconic anhydride. As the hydroxy group-containing monomer, for example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, (meth) acrylic acid 8-hydroxyoctyl, 10-hydroxydecyl (meth) acrylic acid, 12-hydroxy lauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of glycidyl group-containing monomers include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of sulfonic acid group-containing monomers include styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth And acryloyloxy naphthalene sulfonic acid. Examples of phosphoric acid group-containing monomers include 2-hydroxyethyl acryloyl phosphate. As the other copolymerizable monomer for the acrylic polymer, one kind of monomer may be used, or two or more kinds of monomers may be used. When the above-mentioned acrylic polymer contains a unit (first unit) derived from an alkyl (meth) acrylate having an alkyl group having 10 or more carbon atoms, a unit derived from 2-hydroxyethyl (meth) acrylate (second unit) It is preferable to include both. In such an acrylic polymer, the molar ratio of the first unit to the second unit is preferably 1 or more, more preferably 3 or more, more preferably 5 or more. Further, the molar ratio is preferably 40 or less, more preferably 35 or less, and more preferably 30 or less.

  The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth) acrylic acid ester to form a crosslinked structure in the polymer skeleton. As such polyfunctional monomers, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (ie polyglycidyl (meth) acrylate), polyester Examples include (meth) acrylates and urethane (meth) acrylates. As a polyfunctional monomer for acrylic polymers, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. The proportion of the polyfunctional monomer in all the monomer components for forming the acrylic polymer is preferably, in order to appropriately express the basic properties such as the adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12 It is 40% by mass or less, preferably 30% by mass or less.

  An acrylic polymer can be obtained by polymerizing a raw material monomer for forming it. Examples of polymerization techniques include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the semiconductor device manufacturing method in which dicing tape 10 to dicing die bond film X are used, it is preferable that the amount of low molecular weight substances in adhesive layer 12 in dicing tape 10 to dicing die bond film X be small. The number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000.

  The pressure-sensitive adhesive layer 12 or a pressure-sensitive adhesive for forming the same may contain, for example, an external crosslinking agent in order to increase the number average molecular weight of a base polymer such as an acrylic polymer. As an external crosslinking agent for reacting with a base polymer such as an acrylic polymer to form a crosslinked structure, polyisocyanate compounds, epoxy compounds, polyol compounds (such as polyphenol compounds), aziridine compounds, and melamine based crosslinking agents can be mentioned. . The content of the external crosslinking agent in the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for making the same is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, with respect to 100 parts by mass of the base polymer.

  Examples of the above-mentioned radiation-polymerizable monomer component for producing a radiation-curable pressure-sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate and pentaerythritol tetra (meth) Acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the above-mentioned radiation-polymerizable oligomer component for producing a radiation-curable pressure-sensitive adhesive include various oligomers such as urethane type, polyether type, polyester type, polycarbonate type and polybutadiene type, and have a molecular weight of about 100 to 30,000. Is appropriate. The total content of the radiation polymerizable monomer component and the oligomer component in the radiation curable pressure sensitive adhesive is determined within a range where the adhesion of the pressure sensitive adhesive layer 12 to be formed can be appropriately reduced, and a base polymer such as an acrylic polymer The amount is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass with respect to 100 parts by mass. In addition, as the addition type radiation-curable pressure-sensitive adhesive, for example, those disclosed in JP-A-60-196956 may be used.

  The radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 contains, for example, a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the polymer side chain or in the polymer main chain at the polymer main chain terminal Internal-type radiation-curable pressure-sensitive adhesives. Such an internal-type radiation-curable pressure-sensitive adhesive is suitable for suppressing unintended changes in adhesion properties caused by the movement of low molecular weight components in the pressure-sensitive adhesive layer 12 to be formed.

  As a base polymer contained in the intrinsic type radiation-curable pressure-sensitive adhesive, one having an acrylic polymer as a basic skeleton is preferable. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer can be adopted. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer including a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer. After obtaining, a compound having a predetermined functional group (second functional group) capable of causing a reaction with the first functional group (second functional group) and a radiation-polymerizable carbon-carbon double bond is carbon-carbon A method of subjecting an acrylic polymer to a condensation reaction or an addition reaction while maintaining the radiation polymerizable property of a double bond can be mentioned.

  Examples of combinations of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group. And hydroxy groups. Among these combinations, a combination of a hydroxy group and an isocyanate group and a combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of the ease of reaction tracking. In addition, although it is technically difficult to produce a polymer having a highly reactive isocyanate group, the first functional group on the acrylic polymer side is preferable from the viewpoint of preparation or availability of the acrylic polymer. It is more preferred if the group is a hydroxy group and the second functional group is an isocyanate group. In this case, an isocyanate compound having both a radiation-polymerizable carbon-carbon double bond and an isocyanate group as a second functional group, ie, a radiation-polymerizable unsaturated functional group-containing isocyanate compound, for example, methacryloyl isocyanate, 2 -Methacryloyloxyethyl isocyanate (MOI), and m-isopropenyl-α, α-dimethylbenzyl isocyanate. When an unsaturated functional group-containing isocyanate compound is introduced or added to the above-mentioned acrylic polymer, the unsaturated functional group-containing isocyanate for the unit (second unit) derived from 2-hydroxyethyl (meth) acrylate in the acrylic polymer The molar ratio of the compound is preferably 0.1 or more, more preferably 0.2 or more, and more preferably 0.3 or more. Further, in a reaction composition containing an acrylic polymer for forming an adduct of an unsaturated functional group-containing isocyanate compound added to an acrylic polymer and an unsaturated functional group-containing isocyanate compound, The molar ratio of the unsaturated functional group-containing isocyanate compound to the hydroxyethyl (meth) acrylate-derived unit (second unit) is preferably 2 or less, more preferably 1.5 or less, and more preferably 1.3 or less.

  The radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphors. These include quinones, halogenated ketones, acyl phosphinoxides, and acyl phosphonates. Examples of α-ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypro Piophenone and 1-hydroxycyclohexyl phenyl ketone can be mentioned. Examples of acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio)- Phenyl] -2-morpholinopropane-1 is mentioned. Examples of benzoin ether compounds include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal compounds include benzyl dimethyl ketal. Examples of the aromatic sulfonyl chloride compounds include 2-naphthalene sulfonyl chloride. Examples of photoactive oxime compounds include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of benzophenone compounds include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Thioxanthone compounds include, for example, thioxanthone, 2-chlorothioxanthone, 2-methyl thioxanthone, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-dichloro thioxanthone, 2,4-diethyl thioxanthone, and 2,4-diisopropyl. Thioxanthone is mentioned. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer such as an acrylic polymer.

  The above-mentioned heat-foaming type pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands by heating. The foaming agent and the organic foaming agent may be mentioned, and as the thermally expandable microspheres, there may be mentioned, for example, microspheres having a configuration in which a substance which is easily gasified and expanded by heating is enclosed in a shell. As an inorganic type foaming agent, ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, and azides are mentioned, for example. As an organic foaming agent, for example, salt-fluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane, azobisisobutyro nitriles, azodicarbonamides, azo compounds such as barium azodicarboxylate, para-toluenesulfonyl Hydrazine compounds such as hydrazide, diphenyl sulfone-3,3'-disulfonyl hydrazide, 4,4'-oxybis (benzenesulfonyl hydrazide), allyl bis (sulfonyl hydrazide), ρ-toluylenesulfonyl semicarbazide and 4,4'-oxybis Semicarbazide compounds such as (benzenesulfonyl semicarbazide), triazole compounds such as 5-morpholine-1,2,3,4-thiatriazole, and N, N'-dinitrosopentamethylenetetramine and N, N'-dimethyl -N, N'-Dinitrosote N- nitroso compounds such as phthalamide may be mentioned. Substances which are easily gasified and expanded by heating to form the above-mentioned thermally expandable microspheres include, for example, isobutane, propane and pentane. Thermally expandable microspheres can be produced by encapsulating a substance that is easily gasified and expanded by heating into a shell-forming substance by coacervation or interfacial polymerization. As the shell-forming substance, a substance exhibiting heat melting property or a substance which can be ruptured by the action of thermal expansion of the encapsulating substance can be used. Such materials include, for example, vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.

  As the above-mentioned non-adhesive force reducing type pressure-sensitive adhesive, for example, a pressure-sensitive adhesive in a form in which the radiation-curable pressure-sensitive adhesive described above with respect to the pressure-sensitive adhesive type pressure-sensitive adhesive is previously cured by radiation (radiated radiation-curable pressure-sensitive adhesive) And pressure-sensitive adhesives. Even though the radiation-curable radiation-curable pressure-sensitive adhesive has a reduced adhesive force due to radiation, depending on the content of the polymer component, it can exhibit the adhesiveness attributed to the polymer component, and adhesion in a predetermined use mode It is possible to exert a tack that can be used to hold the body tacky. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of non-adhesive force reducing type adhesive may be used, or two or more types of non-adhesive force non-reducing type adhesive may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed of a non-adhesive force reducing type pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a non-adhesive force reducing type adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive non-reducing pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive non-reducing type It may be formed of a pressure sensitive adhesive, and other portions may be formed of a pressure sensitive adhesive. In addition, when the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers constituting the laminated structure may be formed of the non-adhesive force reducing type adhesive, or some layers in the laminated structure have non-adhesive force non-reducing type It may be formed of an adhesive.

  On the other hand, as a pressure-sensitive adhesive in the adhesive layer 12, for example, an acrylic adhesive or a rubber adhesive having an acrylic polymer as a base polymer can be used. When the pressure-sensitive adhesive layer 12 contains an acrylic pressure-sensitive adhesive as a pressure-sensitive pressure-sensitive adhesive, the acrylic polymer that is the base polymer of the acrylic pressure-sensitive adhesive preferably has a mass ratio of monomer units derived from As the most abundant monomer unit. Such acrylic polymers include, for example, the acrylic polymers described above for radiation curable adhesives.

  The pressure-sensitive adhesive layer 12 or a pressure-sensitive adhesive for forming the same may contain, in addition to the components described above, a crosslinking accelerator, a tackifier, an antiaging agent, a coloring agent such as a pigment or a dye, . The colorant may be a compound that is colored upon exposure to radiation. Such compounds include, for example, leuco dyes.

The pressure-sensitive adhesive layer 12 preferably has a surface free energy (preferably 32 mJ / m ² or less, more preferably 30 mJ / m ² or less, more preferably 28 mJ / m ² or less) on the pressure-sensitive adhesive surface 12 a forming an interface with the adhesive layer 20. Surface free energy (second surface free energy) having a second surface free energy) or preferably 32 mJ / m ² or less, more preferably 30 mJ / m ² or less, more preferably 28 mJ / m ² or less It can have When the pressure-sensitive adhesive layer 12 is a curable pressure-sensitive adhesive layer such as a radiation-curable pressure-sensitive adhesive layer, the second surface free energy in the pressure-sensitive adhesive layer 12 after curing is preferably 32 mJ / m ² or less, Preferably it is 30 mJ / m ² or less, more preferably 28 mJ / m ² or less. Further, the pressure-sensitive adhesive layer 12 is in adhesive surface 12a that forms the interface between the adhesive layer 20, preferably 15 mJ / m ² or more, more preferably 18 mJ / m ² or more, more preferably 20 mJ / m ² or more surface free or having the energy (second surface free energy), or preferably 15 mJ / m ² or more, more preferably 18 mJ / m ² or more, more preferably 20 mJ / m ² or more surface free energy (free second surface Energy). When the pressure-sensitive adhesive layer 12 is a curable pressure-sensitive adhesive layer such as a radiation-curable pressure-sensitive adhesive layer, the second surface free energy in the pressure-sensitive adhesive layer 12 after curing is preferably 15 mJ / m ² or more. Preferably it is 18 mJ / m ² or more, more preferably 20 mJ / m ² or more. The surface free energy of the pressure-sensitive adhesive surface 12 a of the pressure-sensitive adhesive layer 12 can be adjusted by adjusting the composition of various monomers for forming a base polymer such as an acrylic polymer in the pressure-sensitive adhesive layer 12.

  The thickness of the pressure-sensitive adhesive layer 12 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and more preferably 5 to 25 μm. Such a configuration is suitable, for example, in the case where the pressure-sensitive adhesive layer 12 contains a radiation-curable pressure-sensitive adhesive, in order to balance the adhesive force to the adhesive layer 20 before and after the radiation-curing of the pressure-sensitive adhesive layer 12 .

  The adhesive layer 20 of the dicing die bond film X has both a function as a thermosetting adhesive for die bonding and an adhesive function for holding a workpiece such as a semiconductor wafer and a frame member such as a ring frame. Have. In the present embodiment, the adhesive for forming the adhesive layer 20 may have a composition containing a thermosetting resin and, for example, a thermoplastic resin as a binder component, or may react with a curing agent. It may have a composition that includes a thermoplastic resin with a thermosetting functional group that can result in bonding. When the adhesive for forming the adhesive layer 20 has a composition containing a thermoplastic resin with a thermosetting functional group, the adhesive needs to further contain a thermosetting resin (such as an epoxy resin). There is no. Such an adhesive layer 20 may have a single layer structure or a multilayer structure.

  When the adhesive layer 20 includes a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermal resin. A curable polyimide resin is mentioned. In forming the adhesive layer 20, one type of thermosetting resin may be used, or two or more types of thermosetting resin may be used. An epoxy resin is preferable as the thermosetting resin contained in the adhesive layer 20 because the content of ionic impurities and the like that may cause corrosion of the semiconductor chip to be die-bonded tends to be small. Moreover, as a hardening agent of an epoxy resin, a phenol resin is preferable.

  As an epoxy resin, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, ortho cresol Novolak type, trishydroxyphenylmethane type, tetraphenylol ethane type, hydantoin type, tris glycidyl isocyanurate type, and glycidyl amine type epoxy resins. Novolac epoxy resins, biphenyl epoxy resins, trishydroxyphenylmethane epoxy resins, and tetraphenylolethane epoxy resins are rich in reactivity with phenol resin as a curing agent, and are excellent in heat resistance, so they are adhesives. It is preferable as the epoxy resin contained in the layer 20.

  As a phenol resin which can act as a hardening agent of an epoxy resin, polyoxystyrenes, such as a novolak type phenol resin, resol type phenol resin, and polypara oxystyrene, are mentioned, for example. The novolac type phenol resin includes, for example, phenol novolac resin, phenol aralkyl resin, cresol novolac resin, tert-butylphenol novolac resin, and nonylphenol novolac resin. As a phenol resin which can act as a curing agent for epoxy resin, one kind of phenol resin may be used, or two or more kinds of phenol resins may be used. When used as a curing agent for an epoxy resin as an adhesive for die bonding, a phenol novolac resin or a phenol aralkyl resin tends to improve the connection reliability of the adhesive, so the epoxy contained in the adhesive layer 20 Preferred as a curing agent for resins.

  From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the adhesive layer 20, the phenol resin preferably has 0 hydroxyl group in the phenol resin per equivalent of epoxy group in the epoxy resin component 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

  The thermoplastic resin contained in the adhesive layer 20 is, for example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer And polybutadiene resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamide imide resins, and fluorine resins. Be In forming the adhesive layer 20, one type of thermoplastic resin may be used, or two or more types of thermoplastic resins may be used. As a thermoplastic resin contained in the adhesive layer 20, an acrylic resin is preferable because it is easy to secure the bonding reliability of the adhesive layer 20 because it has few ionic impurities and high heat resistance. In addition, from the viewpoint of coexistence with the adhesive property of the adhesive layer 20 to the ring frame described later at room temperature and a temperature near the same and the prevention of residue upon peeling, the adhesive layer 20 is a main component of the thermoplastic resin And a polymer having a glass transition temperature of -10 to 10 ° C. The main component of the thermoplastic resin is a resin component that occupies the largest mass ratio in the thermoplastic resin component.

  As the glass transition temperature of the polymer, the glass transition temperature (theoretical value) determined based on the following Fox equation can be used. The Fox equation is a relationship between the glass transition temperature Tg of a polymer and the glass transition temperature Tgi of a homopolymer for each constituent monomer in the polymer. In the following Fox equation, Tg represents the glass transition temperature (° C.) of a polymer, Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (° C.) of the homopolymer of the monomer i ). For the glass transition temperature of homopolymers, literature values can be used. For example, “New Polymer Bunko 7 Introduction to Synthetic Resins for Paints” (Kitaoka Kyozo, Polymer Journal, 1995) and “Acrylester Catalog (1997) (Mitsubishi Rayon Co., Ltd.) mentions glass transition temperatures of various homopolymers. On the other hand, the glass transition temperature of the homopolymer of the monomer can also be determined by the method specifically described in JP-A-2007-51271.

Fox's formula 1 / (273 + Tg) = Σ [Wi / (273 + Tgi)]

  Preferably, the acrylic resin contained as a thermoplastic resin in the adhesive layer 20 contains a monomer unit derived from a (meth) acrylic acid ester as the largest main monomer unit in mass ratio. As such (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above for the acrylic polymer which is one component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may be used it can. The acrylic resin contained as a thermoplastic resin in the adhesive layer 20 may contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid ester. As such other monomer components, for example, functional groups such as carboxy group-containing monomer, acid anhydride monomer, hydroxy group-containing monomer, glycidyl group-containing monomer, sulfonic acid group-containing monomer, phosphoric acid group-containing monomer, acrylamide, acrylonitrile and the like Group-containing monomers and various polyfunctional monomers; specifically, an acrylic polymer which is one component of a radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be copolymerized with (meth) acrylic acid ester As the other monomer, the same one as described above can be used. From the viewpoint of achieving high cohesion in the adhesive layer 20, the acrylic resin contained in the adhesive layer 20 is preferably a (meth) acrylic ester (in particular, the carbon number of the alkyl group is 4 or less A copolymer of (meth) acrylic acid alkyl ester), a carboxy group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (particularly a polyglycidyl-based polyfunctional monomer), and more preferably ethyl acrylate And copolymers of butyl acrylate, acrylic acid, acrylonitrile and polyglycidyl (meth) acrylate.

  The content ratio of the thermosetting resin in the adhesive layer 20 is preferably 5 to 60% by mass, more preferably 10 to 50 from the viewpoint that the adhesive layer 20 properly exhibits the function as a thermosetting adhesive. It is mass%.

  When the adhesive layer 20 contains a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming the thermosetting functional group-containing acrylic resin preferably contains a monomer unit derived from a (meth) acrylic acid ester as the largest main monomer unit in mass ratio. As such (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above for the acrylic polymer which is one component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may be used it can. On the other hand, as a thermosetting functional group for forming a thermosetting functional group containing acrylic resin, a glycidyl group, a carboxy group, a hydroxyl group, and an isocyanate group are mentioned, for example. Among these, glycidyl group and carboxy group can be used suitably. That is, as a thermosetting functional group containing acrylic resin, a glycidyl group containing acrylic resin and a carboxy group containing acrylic resin can be used suitably. In addition, as the curing agent of the thermosetting functional group-containing acrylic resin, for example, using the above-described external crosslinking agent which may be regarded as one component of a radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 it can. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenol compound can be suitably used as a curing agent, and, for example, the various phenol resins described above can be used.

  In order to achieve a certain degree of crosslinking of the adhesive layer 20 before being cured for die bonding, for example, it reacts with the functional group at the molecular chain end of the above-mentioned resin contained in the adhesive layer 20, etc. It is preferable to mix | blend the polyfunctional compound which can be combined as a crosslinking agent in the resin composition for adhesive layer formation. Such a configuration is suitable for improving the adhesive properties under high temperature and for improving the heat resistance of the adhesive layer 20. As such a crosslinking agent, a polyisocyanate compound is mentioned, for example. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and an adduct of polyhydric alcohol and diisocyanate. The content of the crosslinking agent in the resin composition for forming an adhesive layer is such that the cohesive force of the adhesive layer 20 formed is improved with respect to 100 parts by mass of the resin having the functional group that can react with the crosslinking agent and bond. The amount is preferably 0.05 parts by mass or more from the viewpoint, and preferably 7 parts by mass or less from the viewpoint of improving the adhesion of the adhesive layer 20 to be formed. In addition, as the crosslinking agent in the adhesive layer 20, another polyfunctional compound such as an epoxy resin may be used in combination with the polyisocyanate compound.

  The content of the high molecular weight component as described above in the adhesive layer 20 is preferably 50 to 100% by mass, and more preferably 50 to 80% by mass. The high molecular weight component is a component having a weight average molecular weight of 10000 or more. Such a configuration is preferable in order to achieve the cohesion of the adhesive layer 20 with respect to a ring frame described later at room temperature and a temperature in the vicinity thereof and the prevention of residue during peeling. The adhesive layer 20 may also contain a liquid resin that is liquid at 23 ° C. When the adhesive layer 20 contains such a liquid resin, the content ratio of the liquid resin in the adhesive layer 20 is preferably 1 to 10% by mass, more preferably 1 to 5% by mass. Such a configuration is preferable in order to achieve the cohesion of the adhesive layer 20 with respect to a ring frame described later at room temperature and a temperature in the vicinity thereof and the prevention of residue during peeling.

  The adhesive layer 20 may contain a filler. By blending the filler in the adhesive layer 20, it is possible to adjust the elastic modulus such as the tensile storage elastic modulus of the adhesive layer 20, and the physical properties such as the conductivity and the thermal conductivity. As a filler, although an inorganic filler and an organic filler are mentioned, an inorganic filler is especially preferable. As the inorganic filler, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystal Besides amorphous silica and amorphous silica, simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon black and graphite can be mentioned. The filler may have various shapes such as spheres, needles and flakes. As the filler in the adhesive layer 20, one kind of filler may be used, or two or more kinds of fillers may be used. The filler content of the adhesive layer 20 is preferably 30% by mass or less, more preferably 25% by mass or less, in order to secure the adhesion of the adhesive layer 20 to the ring frame in the cool expanding step described later.

  When the adhesive layer 20 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. The configuration in which the average particle diameter of the filler is 0.005 μm or more is suitable for achieving high wettability and adhesiveness to an adherend such as a semiconductor wafer in the adhesive layer 20. The configuration that the average particle diameter of the filler is 10 μm or less is suitable for obtaining sufficient filler addition effect in the adhesive layer 20 and securing heat resistance. The average particle diameter of the filler can be determined, for example, using a light intensity type particle size distribution analyzer (trade name “LA-910”, manufactured by HORIBA, Ltd.).

  The adhesive layer 20 may contain other components as needed. The other components include, for example, flame retardants, silane coupling agents, and ion trapping agents. Flame retardants include, for example, antimony trioxide, antimony pentoxide, and brominated epoxy resins. As a silane coupling agent, for example, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane can be mentioned. As an ion trap agent, for example, hydrotalcites, bismuth hydroxide, hydrous antimony oxide (for example, “IXE-300” manufactured by Toagosei Co., Ltd.), zirconium phosphate having a specific structure (eg, “manufactured by Toagosei Co., Ltd.” IXE-100 ′ ′), magnesium silicate (eg, “Kyoward 600” manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (eg, “Kyoward 700” manufactured by Kyowa Chemical Industry Co., Ltd.). Compounds capable of forming a complex with a metal ion can also be used as an ion trapping agent. Such compounds include, for example, triazole compounds, tetrazole compounds, and bipyridyl compounds. Among these, triazole compounds are preferable from the viewpoint of the stability of the complex formed with the metal ion. As such a triazole compound, for example, 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-) 5-Methylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-t-butyl-5-methylphenyl) ) 5-Chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) benzotriazole, 6- (2 -Benzotriazolyl) -4-tert-octyl-6'-tert-butyl-4'-methyl-2,2'-methylenebisphenol, 1- (2,3-dihydroxypropyl) benzotriazole, 1- (1 , 2-dicarboxydiethyl) Zotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t-pentyl-6-{(H-benzotriazol-1-yl) methyl} phenol, 2- (2-hydroxy-5) -t-Butylphenyl) -2H-benzotriazole, octyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2-ethylhexyl -3- [3-t-Butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2- (2H-benzotriazol-2-yl) -6- ( 1-methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazol-2-yl) -4-t-butylphenol, 2- (2 -Hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-) -Octylphenyl) -benzotriazole, 2- (3-t-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) ) Benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chloro-benzotriazole, 2- [2-hydroxy-3,5-di (1,1-dimethylbenzyl) Phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazol-2-yl] -4- (1,1,3,3-tetramethylbutyl) phenol], 2- [2 -Hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H-benzotriazole, and methyl-3- [3- (2H-benzotriazol-2-yl) -5-t-butyl- 4-hydroxyphenyl] propionate is mentioned. Also, predetermined hydroxyl group-containing compounds such as quinol compounds, hydroxyanthraquinone compounds and polyphenol compounds can be used as the ion trapping agent. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthralpine, tannin, gallic acid, methyl gallate, pyrogallol and the like. As other components as described above, one type of component may be used, or two or more types of components may be used.

  The thickness of the adhesive layer 20 is, for example, in the range of 1 to 200 μm. The upper limit of the thickness is preferably 100 μm, more preferably 80 μm. The lower limit of the thickness is preferably 3 μm, more preferably 5 μm.

The surface free energy (second surface free energy) of the surface 20b forming the interface with the adhesive layer 12 in the adhesive layer 20 is preferably 30 mJ / m ² or more, more preferably 31 mJ / m ² or more, more preferably It is 32 mJ / m ² or more. The second surface free energy is preferably 45 mJ / m ² or less, more preferably 43 mJ / m ² or less, and more preferably 40 mJ / m ² or less.

The adhesive layer 20 is 0.1 N / 10 mm or more, more preferably 0.3 N / 10 mm or more, with respect to the SUS plane in a peeling test under conditions of 23 ° C., peeling angle 180 ° and a tensile speed of 10 mm / min. It preferably exhibits a 180 ° peel adhesion of 0.5 N / 10 mm or more. The adhesive layer 20 exhibits a 180 ° peel adhesive strength of preferably 20 N / 10 mm or less, more preferably 10 N / 10 mm or less, to the SUS plane in a peel test under the same conditions. Such 180 ° peel adhesion can be measured using a tensile tester (trade name “Autograph AGS-J”, manufactured by Shimadzu Corporation). The sample piece to be subjected to the measurement is prepared as follows. First, from the dicing die bond film X, a laminate having a size of 10 mm wide × 100 mm long and having a laminated structure of the base 11, the adhesive layer 12, and the adhesive layer 20 is cut out. In the case where the pressure-sensitive adhesive layer 12 is an ultraviolet-curable type, the pressure-sensitive adhesive layer 12 was irradiated with ultraviolet light of 350 mJ / cm ² from the side of the substrate 11 in the dicing die bond film X to cure the pressure-sensitive adhesive layer 12 Later, the laminate is cut out. Next, the adhesive layer 20 side of the laminate is bonded to the silicon wafer by a pressure bonding operation in which a 2 kg roller makes one reciprocation at 60 ° C., and then the bonded body is left at 60 ° C. for 2 minutes. Next, the pressure-sensitive adhesive layer 12 and the substrate 11 are peeled off from the adhesive layer 20 on the silicon wafer. Next, a backing tape (trade name "BT-315", manufactured by Nitto Denko Corporation) is attached to the adhesive layer 20 left on the silicon wafer, the adhesive layer 20 is peeled off from the silicon wafer, and the silicon wafer is The adhesive layer 20 is transferred to the backing tape. In this way, an adhesive layer sample piece (width 10 mm × length 100 mm) with a backing tape is created. Bonding of the sample piece to the adherend SUS plate is performed by a pressure bonding operation in which a 2 kg roller is reciprocated once.

  Adhesive layer 20 is measured on an adhesive layer 20 sample piece having a width of 4 mm and a thickness of 80 μm under conditions of initial chuck distance 10 mm, frequency 10 Hz, dynamic strain ± 0.5 μm, and heating rate 5 ° C./min. The tensile storage modulus at 23 ° C. is preferably 100 MPa or more, more preferably 500 MPa or more, and more preferably 1000 MPa or more. The adhesive layer 20 preferably has a tensile storage elastic modulus at 23 ° C. measured under the same conditions of 4000 MPa or less, more preferably 3000 MPa or less, more preferably 2000 MPa or less. The tensile storage elastic modulus can be determined based on dynamic viscoelasticity measurement performed using a dynamic viscoelasticity measuring device (trade name "Rheogel-E4000", manufactured by UBM). In the measurement, the size of the sample piece to be measured is 4 mm wide × 20 mm long × 80 μm thick, the initial chuck distance between the sample piece holding chucks is 10 mm, and the measurement mode is a tension mode. Is −30 ° C. to 100 ° C., the frequency is 10 Hz, the dynamic strain is ± 0.5 μm, and the temperature rising rate is 5 ° C./min.

  In the present embodiment, in the in-plane direction D of the dicing die bond film X, the outer peripheral end 20 e of the adhesive layer 20 is 1000 μm or less from the outer peripheral end 11 e of the substrate 11 and the outer peripheral end 12 e of the adhesive layer 12 in the dicing tape 10 , Preferably within a distance of 500 μm. That is, in the film in-plane direction D, the outer peripheral end 20 e of the adhesive layer 20 is between 1000 μm to 1000 μm inside, preferably 500 μm to 500 μm outside with respect to the outer edge 11 e of the substrate 11 And between the inner side 1000 μm and the outer side 1000 μm, preferably between the inner side 500 μm and the outer side 500 μm with respect to the outer peripheral end 12 e of the pressure-sensitive adhesive layer 12. In the configuration in which the dicing tape 10 or its adhesive layer 12 and the adhesive layer 20 thereon have substantially the same dimensions in the in-plane direction D, the adhesive layer 20 adheres to the work as described above. In addition to the area, the frame member affixing area is included on the surface 20 a side.

When the pressure-sensitive adhesive layer 12 of the dicing tape 10 is a radiation-curable pressure-sensitive adhesive layer in the dicing die-bonding film X, the pressure-sensitive adhesive layer after radiation curing in a T-peel test under conditions of 23 ° C. and a peeling speed of 300 mm / min. The peel force between the adhesive 12 and the adhesive layer 20 is preferably 0.06 N / 20 mm or more, more preferably 0.1 N / 20 mm or more, and more preferably 0.15 N / 20 mm or more. The peeling force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 after radiation curing in a T-type peeling test under conditions of 23 ° C. and peeling speed of 300 mm / min is preferably 0.25 N / 20 mm or less, more preferably Is 0.23 N / 20 mm or less, more preferably 0.2 N / 20 mm or less. The peel strength between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 before radiation curing in a T-peel test under conditions of 23 ° C. and a peel speed of 300 mm / min is preferably 2 N / 20 mm or more. Such a T-type peeling test can be performed using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). The sample piece to be subjected to the test is produced as follows. First, the adhesive layer 12 is irradiated with ultraviolet light of 350 mJ / cm ² from the side of the substrate 11 in the dicing die bond film X to cure the adhesive layer 12. Next, a backing tape (trade name "BT-315", manufactured by Nitto Denko Corporation) is bonded to the adhesive layer 20 side of dicing die bond film X, and then a sample piece with a size of width 50 mm × length 120 mm is cut out. .

  With respect to the surface of the pressure-sensitive adhesive layer 12 and the surface of the adhesive layer 20 for forming the interface between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 in the dicing die bond film X, the difference in arithmetic mean surface roughness (Ra) of both surfaces is preferably It is 100 nm or less.

  The dicing die bond film X may be accompanied by a separator S as shown in FIG. Specifically, each dicing die bond film X may take a sheet-like form with a separator S, the separator S is long, and a plurality of dicing die bond films X are arranged thereon, and the separator S May be wound into the form of a roll. The separator S is an element for covering and protecting the surface of the adhesive layer 20 of the dicing die bond film X, and is separated from the film when using the dicing die bond film X. Examples of the separator S include plastic films and papers surface-coated with a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a release agent such as a fluorine release agent or a long chain alkyl acrylate release agent Be The thickness of the separator S is, for example, 5 to 200 μm.

  The dicing die bond film X having the above configuration can be manufactured, for example, as follows.

  First, as shown in FIG. 3A, the adhesive composition layer C1 is formed on the long separator S. The adhesive composition layer C1 can be formed by applying the adhesive composition prepared for forming the adhesive layer 20 on the separator S. Examples of the coating method of the adhesive composition include roll coating, screen coating, and gravure coating.

  Next, as shown in FIG. 3B, a pressure-sensitive adhesive composition layer C2 is formed on the adhesive composition layer C1. The pressure-sensitive adhesive composition layer C2 can be formed by applying the pressure-sensitive adhesive composition prepared for forming the pressure-sensitive adhesive layer 12 on the adhesive composition C1. Examples of the method for applying the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating.

  Next, on the separator S, the adhesive layer 20 ′ and the pressure-sensitive adhesive layer 12 ′ are formed through a simultaneous heat treatment of the adhesive composition layer C1 and the pressure-sensitive adhesive composition layer C2. In this heat treatment, both layers are dried as needed, and a crosslinking reaction is caused in both layers as needed. The heating temperature is, for example, 60 to 175 ° C., and the heating time is, for example, 0.5 to 5 minutes. The adhesive layer 20 ′ is to be processed and formed into the above-described adhesive layer 20. The pressure-sensitive adhesive layer 12 ′ is to be processed and formed into the pressure-sensitive adhesive layer 12 described above.

  Next, as shown in FIG. 3 (c), the base 11 'is pressure bonded onto the pressure-sensitive adhesive layer 12'. The base 11 ′ is to be processed and formed into the base 11 described above. The resin base 11 'is manufactured by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a coextrusion method, and the like. be able to. The film or substrate 11 'after film formation is subjected to a predetermined surface treatment as required. In this step, the bonding temperature is, for example, 30 to 50 ° C., preferably 35 to 45 ° C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm, preferably 1 to 10 kgf / cm. By this process, a long-sized laminated sheet body having a laminated structure of the separator S, the adhesive layer 20 ′, the pressure-sensitive adhesive layer 12 ′, and the base 11 ′ is obtained.

  Next, as shown in FIG. 3 (d), the above-mentioned laminated sheet body is processed such that the processing blade is pushed from the side of the base 11 'to the separator S (the cut portion in FIG. 3 (d) Is schematically represented by a thick line). For example, while rotating the laminated sheet in one direction F at a constant speed, it is disposed rotatably around an axis orthogonal to the direction F and a rotating roll with a processing blade with a processing blade for punching processing (shown in FIG. The processing bladed surface (not shown) is brought into contact with the base 11 'side of the laminated sheet with a predetermined pressing force. Thereby, the dicing tape 10 (the base material 11 and the pressure-sensitive adhesive layer 12) and the adhesive layer 20 are collectively processed and formed, and the dicing die bond film X is formed on the separator S. Thereafter, as shown in FIG. 3E, the material laminated portion around the dicing die bond film X is removed from the separator S.

  As described above, the dicing die bond film X can be manufactured.

In the process of manufacturing a semiconductor device, as described above, there may be an expanding process or a picking process in which a dicing die bonding film is used to obtain a semiconductor chip with an adhesive layer. It is necessary that the adhesive layer in the semiconductor chip with the agent layer be peeled off from the adhesive layer so that the semiconductor chip can be picked up from the dicing tape. The difference between the first and second surface free energy at the interface between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 of the dicing die-bonding film X of the present invention is 3.5 mJ / m ² or more, preferably 4 mJ / m ² The inventors of the present invention have obtained the finding that the above condition, more preferably 5 mJ / m ² or more, is suitable for realizing a good pickup in the pickup step. Specifically, it is as shown in the following Examples and Comparative Examples. As the difference between the surface free energy of the adhesive surface 12a of the adhesive layer 12 and the surface free energy of the surface 20b of the adhesive layer 20 increases at the interface between the adhesive layer 12 and the adhesive layer 20, the configuration of both layers Material migration is unlikely to occur. And the fact that the transfer of the constituent material between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 hardly occurs is suitable for realizing a small peeling force between both layers. The difference between the first and second surface free energy according to the interface between the adhesive layer 12 and the adhesive layer 20 is 3.5 mJ / m ² or more, preferably 4 mJ / m ² or more, more preferably 5 mJ / m The above configuration of ^two or more secures a small peeling force between the adhesive layer 12 and the adhesive layer 20 to such an extent that a good pickup of the semiconductor chip with an adhesive layer can be realized in the pickup step. It is suitable for

The dicing die-bonding film X suitable for suppressing an increase in peeling force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 reduces the elasticity of the adhesive layer 20 to ensure adhesion to the frame member. The dicing tape 10 or its adhesive layer 12 and the adhesive layer 20 thereon are substantially the same in the film in-plane direction such that the adhesive layer 20 includes the frame member attaching area in addition to the work attaching area. It is possible to design with the dimensions of Specifically, as described above, in the in-plane direction of the dicing die bond film X, the outer peripheral edge 20e of the adhesive layer 20 is from the outer peripheral edge 11e of the base 11 of the dicing tape 10 or the outer peripheral edge 12e of the adhesive layer 12 It is possible to adopt a design that is within a distance of 1000 μm, preferably within a distance of 500 μm. Such a dicing die bond film X is processed to form one dicing tape 10 having a laminated structure of the base 11 and the pressure-sensitive adhesive layer 12, and to form one adhesive layer 20. It is suitable to carry out collectively by processing such as 1 punching processing. Such a dicing die bond film X is suitable for efficient manufacturing in terms of reduction of the number of manufacturing steps, suppression of manufacturing cost, and the like. Further, in the above-described manufacturing method which involves laminating and forming the composition for forming the adhesive layer and the composition for forming the adhesive layer and collectively drying the two composition layers, the adhesive layer and the adhesive layer are individually formed. Although it is more likely to cause an increase in peel strength between the pressure sensitive adhesive layer and the adhesive layer than the production method of bonding after being formed, it relates to the interface between the pressure sensitive adhesive layer 12 and the adhesive layer 20 In the above configuration, the difference between the first and second surface free energies is 3.5 mJ / m ² or more, as described above, preferably 4 mJ / m ² or more, more preferably 5 mJ / m ² or more. It is suitable for securing a small peeling force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 to such an extent that a good pickup of the semiconductor chip with an adhesive layer can be realized in the process.

  As described above, the dicing die bond film X is suitable for realizing a good pick-up of the adhesive layer-attached semiconductor chip from the dicing tape 10.

As described above, the pressure-sensitive adhesive layer 12 in the dicing die bond film X is preferably 32 mJ / m ² or less, more preferably 30 mJ / m ² or less, more preferably 32 mJ / m ² or less, in the adhesive surface 12 a forming an interface with the adhesive layer 20. It is configured to have a surface free energy (second surface free energy) of 28 mJ / m ² or less. The said structure is suitable in order to ensure the above-mentioned small peeling force between the adhesive layer 12 of the dicing die-bonding film X, and the adhesive layer 20. As shown in FIG. Further, the adhesive layer 12, as described above, the adhesive surface 12a that forms the interface between the adhesive layer 20, preferably 15 mJ / m ² or more, more preferably 18 mJ / m ² or more, more preferably 20 mJ / m It is comprised so that it may have ^two or more surface free energy (2nd surface free energy). The configuration is suitable, for example, from the viewpoint of securing appropriate adhesion between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 such that peeling does not occur during transport of the dicing die-bonding film X or the like. is there.

The second surface free energy in the adhesive layer 20 of the dicing die bond film X is preferably 30 mJ / m ² or more, more preferably 31 mJ / m ² or more, more preferably 32 mJ / m ² or more as described above. is there. The configuration is suitable for securing the adhesion required between the adhesive layer 20 and the adhesive layer 12. The second surface free energy is preferably 45 mJ / m ² or less, more preferably 43 mJ / m ² or less, and more preferably 40 mJ / m ² or less. The configuration is suitable for securing the above-described small peeling force between the adhesive layer 20 and the pressure-sensitive adhesive layer 12.

  As described above, the adhesive layer 20 is 0.1 N / 10 mm or more, more preferably 0.3 N or more with respect to the SUS plane in the peeling test under the conditions of 23 ° C., peeling angle 180 ° and tensile speed 10 mm / min. It exhibits a 180 ° peel adhesion of at least 10 mm, more preferably at least 0.5 N / 10 mm. The configuration is suitable for securing the holding of the frame member by the dicing die bond film X. In addition, as described above, the adhesive layer 20 exhibits a 180 ° peel adhesive strength of preferably 20 N / 10 mm or less, more preferably 10 N / 10 mm or less, to the SUS plane in the peel test under the same conditions as described above. The configuration is suitable for securing the releasability of the frame member from the dicing die bond film X.

  The adhesive layer 20 is, as described above, the initial chuck distance 10 mm, the frequency 10 Hz, the dynamic strain ± 0.5 μm, and the heating rate 5 ° C./min for the adhesive layer 20 sample piece having a width 4 mm and a thickness 80 μm. The tensile storage elastic modulus at 23 ° C. measured under the conditions of is preferably 100 MPa or more, more preferably 500 MPa or more, more preferably 1000 MPa or more. The configuration is suitable for securing the adhesive force of the adhesive layer 20 to the frame member, and thus suitable for securing the holding of the frame member by the dicing die bond film X. Further, as described above, the adhesive layer 20 preferably has a tensile storage modulus at 23 ° C. measured under the same conditions of 4000 MPa or less, more preferably 3000 MPa or less, more preferably 2000 MPa or less. The configuration is suitable for securing the releasability of the frame member from the dicing die bond film X.

  When the pressure-sensitive adhesive layer 12 of the dicing tape 10 is a radiation-curable pressure-sensitive adhesive layer 12 in the dicing die-bonding film X, adhesion after radiation curing in a T-peel test under conditions of 23 ° C. and peeling speed 300 mm / min. The peeling force between the agent layer 12 and the adhesive layer 20 is preferably 0.06 N / 20 mm or more, more preferably 0.1 N / 20 mm or more, more preferably 0.15 N / 20 mm or more, as described above. is there. The configuration is suitable for securing the adhesion between the pressure-sensitive adhesive layer 12 after curing of the dicing tape 10 and the adhesive layer 20 thereon, and therefore, in using the dicing die-bonding film X, the pressure-sensitive adhesive layer When an expanding process is performed after hardening of 12, it is suitable in order to control generating of partial exfoliation from a pressure sensitive adhesive layer 12 of a semiconductor chip with an adhesive layer, ie, a float, in the process concerned. The peel force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 after radiation curing in a T-peel test under conditions of 23 ° C. and a peel speed of 300 mm / min is preferably 0.25 N / as described above. It is 20 mm or less, more preferably 0.23 N / 20 mm or less, more preferably 0.2 N / 20 mm or less. The said structure is suitable in order to implement | achieve the favorable pick-up of the semiconductor chip with an adhesive layer from the adhesive layer 12 after hardening in the pick-up process performed after hardening of the adhesive layer 12. FIG. In addition, the peel force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 before radiation curing in the T-peel test under the conditions of 23 ° C. and the peel speed of 300 mm / min is preferably 2 N / as described above. 20 mm or more. The configuration is suitable for securing the adhesion between the pressure-sensitive adhesive layer 12 in the uncured state and the adhesive layer 20 thereon in the dicing tape 10, and therefore, adhesion when using the dicing die-bonding film X When the expanding step is performed in a state where the agent layer 12 is not cured, it is preferable in the step to suppress the occurrence of partial peeling, that is, floating, from the adhesive layer 12 of the semiconductor chip with an adhesive layer.

  Arithmetic mean surface roughness (Ra) of both surfaces of the adhesive surface 12 a of the adhesive layer 12 and the surface 20 b of the adhesive layer 20 for forming the interface between the adhesive layer 12 and the adhesive layer 20 in the dicing die bond film X Preferably, the difference is less than 100 nm as described above. The configuration is suitable for securing the adhesion between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 thereon, and therefore, the portion from the pressure-sensitive adhesive layer 12 of the semiconductor chip with an adhesive layer in the expanding step. Is suitable for suppressing the occurrence of mechanical peeling or lifting.

  As described above, the pressure-sensitive adhesive layer 12 in the dicing die-bonding film X has a first unit derived from an alkyl (meth) acrylate having 10 or more carbon atoms in the alkyl group and a second unit derived from 2-hydroxyethyl (meth) acrylate. And preferably containing an acrylic polymer. The configuration is suitable for achieving high shear adhesion between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 thereon, and thus the adhesive on the dicing tape 10 expanded in the in-plane direction in the expanding step. It is suitable to apply a cutting force to the layer 20 appropriately to cut the adhesive layer 20.

  In the acrylic polymer in the pressure-sensitive adhesive layer 12, as described above, the molar ratio of the first unit to the second unit is preferably 1 or more, more preferably 3 or more, and more preferably 5 or more. The configuration is to suppress the bonding interaction acting in the laminating direction between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 thereon while securing high shear adhesion as described above. Preferably, therefore, it contributes to the realization of a good pickup in the pickup process. Further, as described above, the molar ratio is preferably 40 or less, more preferably 35 or less, and more preferably 30 or less. The said structure ensures the adhesiveness between the adhesive layer 12 and the adhesive layer 20, and suppresses the partial peeling from the adhesive layer 12 of a semiconductor chip with an adhesive layer in the expand process, ie, generation | occurrence | production of floating. In terms of

  As described above, the acrylic polymer in the pressure-sensitive adhesive layer 12 is preferably an adduct of a radiation polymerizable polymerizable unsaturated functional group-containing isocyanate compound. When the acrylic polymer in the pressure-sensitive adhesive layer 12 is such an unsaturated functional group-containing isocyanate compound adduct, the unsaturated functional group-containing second unit derived from 2-hydroxyethyl (meth) acrylate in the acrylic polymer is contained. The molar ratio of the isocyanate compound is preferably 0.1 or more, more preferably 0.2 or more, and more preferably 0.3 or more. These constitutions are suitable for appropriately increasing the elasticity of the pressure-sensitive adhesive layer 12 through the reaction of the acrylic polymer and the unsaturated functional group-containing isocyanate compound, and for the favorable cleavage of the adhesive layer 20 in the expanding step. To contribute. Further, from the viewpoint of reduction of low molecular weight components in the pressure-sensitive adhesive layer 12 after curing, the acrylic polymer and the unsaturated functional group for forming the adduct of the acrylic polymer with the unsaturated functional group-containing isocyanate compound. In the reaction composition containing the containing isocyanate compound, the molar ratio of the unsaturated functional group-containing isocyanate compound to the 2-hydroxyethyl (meth) acrylate-derived unit (second unit) of the acrylic polymer is, as described above, Preferably it is 2 or less, More preferably, it is 1.5 or less, More preferably, it is 1.3 or less.

  4 to 9 show a method of manufacturing a semiconductor device according to an embodiment of the present invention.

  In the semiconductor device manufacturing method, first, as shown in FIG. 4A and FIG. 4B, the dividing groove 30a is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and wiring structures (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. It is done. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held in a state where the semiconductor wafer W is held by the wafer processing tape T1. A dividing groove 30a of a predetermined depth is formed on the first surface Wa side using a rotating blade such as a dicing apparatus. The dividing groove 30a is an air gap for dividing the semiconductor wafer W into semiconductor chip units (in FIG. 4 to FIG. 6, the dividing groove 30a is schematically represented by a thick line).

  Next, as shown in FIG. 4C, bonding of the wafer processing tape T2 having the adhesive surface T2a to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 from the semiconductor wafer W Peeling is performed.

  Next, as shown in FIG. 4D, in a state where the semiconductor wafer W is held by the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. (Wafer thinning step). Grinding can be performed using a grinding apparatus equipped with a grinding wheel. In the present embodiment, the semiconductor wafer 30A that can be singulated into the plurality of semiconductor chips 31 is formed by this wafer thinning step. Specifically, the semiconductor wafer 30A has a portion (connection portion) in which the portion to be singulated into the plurality of semiconductor chips 31 in the wafer is connected on the second surface Wb side. The thickness of the connection portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 μm, preferably 3 to 20 μm. It is.

Next, as shown in FIG. 5A, the semiconductor wafer 30A held by the wafer processing tape T2 is bonded to the adhesive layer 20 of the dicing die bond film X. Thereafter, as shown in FIG. 5B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die bond film X is a radiation-curable pressure-sensitive adhesive layer, the semiconductor wafer 30A is attached to the adhesive layer 20 in place of the above-described radiation irradiation in the manufacturing process of the dicing die bond film X. After the alignment, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet light from the side of the substrate 11. Irradiation dose is, for example, 50 to 500 mJ / cm ^2, preferably 100~300mJ / cm ^2. The region (irradiated region R shown in FIG. 1) where the irradiation as the adhesive force reducing measure of the pressure-sensitive adhesive layer 12 is performed in the dicing die bond film X is, for example, the peripheral edge thereof in the adhesive layer 20 bonding region in the pressure-sensitive adhesive layer 12 This is an area excluding parts.

  Next, after the ring frame 41 is attached on the adhesive layer 20 in the dicing die bond film X, as shown in FIG. 6A, the dicing die bond film X with the semiconductor wafer 30A is a holder for the expanding device. It is fixed at 42.

  Next, a first expanding step (cool expanding step) under relatively low temperature conditions is performed as shown in FIG. 6B, and the semiconductor wafer 30A is singulated into a plurality of semiconductor chips 31. At the same time, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain the semiconductor chip 31 with an adhesive layer. In this process, the hollow cylindrical push-up member 43 provided in the expanding device is raised against the dicing tape 10 at the lower side of the dicing die bond film X in the figure, and dicing of the dicing die bond film X bonded to the semiconductor wafer 30A. The tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expanding is performed under the condition that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa occurs in the dicing tape 10. The temperature conditions in the cool expanding step are, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 moves up) in the cool expanding step is preferably 0.1 to 100 mm / sec. Further, the amount of expansion in the cool expanding step is preferably 3 to 16 mm.

  In this process, cutting occurs in a thin and fragile portion of the semiconductor wafer 30A, and singulation to the semiconductor chip 31 occurs. At the same time, in this step, deformation is suppressed in each region where each semiconductor chip 31 is in close contact with the adhesive layer 20 in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded A tensile stress generated in the dicing tape 10 acts on a portion facing the dividing groove between 31 without such a deformation suppressing action. As a result, in the adhesive layer 20, the portion facing the dividing groove between the semiconductor chips 31 is cut. After the process, as shown in FIG. 6C, the push-up member 43 is lowered to release the expanded state of the dicing tape 10.

  Next, a second expanding step under relatively high temperature conditions is performed as shown in FIG. 7A, and the distance (separation distance) between the adhesive layer-attached semiconductor chips 31 is expanded. In this process, the hollow cylindrical push-up member 43 provided in the expanding device is raised again, and the dicing tape 10 of the dicing die bond film X is expanded. The temperature conditions in the second expanding step are, for example, 10 ° C. or higher, preferably 15 to 30 ° C. The expanding speed (speed at which the push-up member 43 rises) in the second expanding step is, for example, 0.1 to 10 mm / second, preferably 0.3 to 1 mm / second. Moreover, the expand amount in a 2nd expand process is 3-16 mm, for example. In this process, the separation distance of the semiconductor chip 31 with an adhesive layer is expanded to such an extent that the semiconductor chip 31 with an adhesive layer can be properly picked up from the dicing tape 10 in a pickup process described later. After this process, as shown in FIG. 7B, the push-up member 43 is lowered to release the expanded state of the dicing tape 10. In order to suppress narrowing of the separation distance of the semiconductor chip 31 with an adhesive layer on the dicing tape 10 after releasing the expanded state, a portion outside the holding area of the semiconductor chip 31 in the dicing tape 10 before releasing the expanded state. It is preferable to heat and shrink.

  Next, after passing through a cleaning process for cleaning the semiconductor chip 31 side of the dicing tape 10 with the semiconductor chip 31 with an adhesive layer using a cleaning liquid such as water, as shown in FIG. The layered semiconductor chip 31 is picked up from the dicing tape 10 (pickup step). For example, with regard to the semiconductor chip 31 with an adhesive layer to be picked up, after raising the pin member 44 of the pickup mechanism in the lower side of the dicing tape 10 in the drawing with the adhesive layer, push it through the dicing tape 10. Do. In the pickup step, the push-up speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 44 is, for example, 50 to 3000 μm.

  Next, as shown in FIG. 9A, the semiconductor chip 31 with the adhesive layer picked up is temporarily fixed to the predetermined adherend 51 via the adhesive layer 21. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive force at 25 ° C. at the time of temporary adhesion of the adhesive layer 21 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa for the adherend 51. The configuration in which the shear adhesive strength of the adhesive layer 21 is 0.2 MPa or more is the bonding surface between the adhesive layer 21 and the semiconductor chip 31 or the adherend 51 by ultrasonic vibration or heating in the wire bonding step described later. It is suitable for performing wire bonding appropriately by suppressing the occurrence of shear deformation. The shear adhesive strength at 175 ° C. at the time of temporary adhesion of the adhesive layer 21 to the adherend 51 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa.

  Next, as shown in FIG. 9B, the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the adherend 51 are electrically connected through the bonding wire 52 ((b)) Wire bonding process). The wire connection between the electrode pad of the semiconductor chip 31 and the terminal portion of the adherend 51 and the bonding wire 52 is realized by ultrasonic welding accompanied by heating so that the adhesive layer 21 is not thermally cured. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature in wire bonding is 80-250 degreeC, for example, Preferably it is 80-220 degreeC. The heating time is a few seconds to a few minutes.

  Next, as shown in FIG. 9C, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wires 52 on the adherend 51 (sealing process). In this process, the thermal curing of the adhesive layer 21 proceeds. In this process, for example, the sealing resin 53 is formed by a transfer molding technique performed using a mold. For example, an epoxy resin can be used as a constituent material of the sealing resin 53. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. If the curing of the sealing resin 53 does not proceed sufficiently in the present step (the sealing step), a post-curing step for completely curing the sealing resin 53 is performed after the present step. Even if the adhesive layer 21 is not completely thermally cured in the sealing step, complete thermal curing of the adhesive layer 21 together with the sealing resin 53 is possible in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C., and the heating time is, for example, 0.5 to 8 hours.

  As described above, a semiconductor device can be manufactured.

  In the present embodiment, as described above, after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51, the wire bonding step is performed without the adhesive layer 21 being completely cured by heat. Instead of such a configuration, in the present invention, after the semiconductor chip 31 with an adhesive layer is temporarily fixed to the adherend 51, the wire bonding step may be performed after the adhesive layer 21 is thermally cured. .

  In the semiconductor device manufacturing method according to the present invention, the wafer thinning step shown in FIG. 10 may be performed instead of the wafer thinning step described above with reference to FIG. After passing through the process described above with reference to FIG. 4C, in the wafer thinning process shown in FIG. 10, with the semiconductor wafer W held by the wafer processing tape T2, the wafer has a predetermined thickness. A semiconductor wafer divided body 30B including the plurality of semiconductor chips 31 and held by the wafer processing tape T2 is formed by grinding from the second surface Wb. In this step, a method (first method) of grinding the wafer may be employed until the dividing groove 30a itself is exposed to the second surface Wb side, or from the second surface Wb to the dividing groove 30a A method of grinding the wafer to the front, and then forming a crack between the division groove 30a and the second surface Wb by the action of the pressing force from the rotary grinding wheel to the wafer to form the semiconductor wafer division body 30B Method) may be adopted. Depending on the method employed, the depth from the first surface Wa of the dividing groove 30a formed as described above with reference to FIGS. 4A and 4B is appropriately determined. . In FIG. 10, the dividing grooves 30a subjected to the first method, or the dividing grooves 30a subjected to the second method and the cracks connected thereto are schematically represented by thick lines. In the present invention, the semiconductor wafer segments 30B manufactured in this manner are bonded to the dicing die bond film X instead of the semiconductor wafer 30A, and then each of the steps described above with reference to FIGS. 5 to 9 are performed. May be

  11A and 11B show a first expanding step (cool expanding step) performed after the semiconductor wafer divided body 30B is bonded to the dicing die bond film X. As shown in FIG. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is abutted against the dicing tape 10 at the lower side of the dicing die bond film X in the figure and is raised, and the dicing die bond film X bonded with the semiconductor wafer divisions 30B The dicing tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer segments 30B. This expanding is performed under the condition that a tensile stress in the range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa is generated in the dicing tape 10. The temperature conditions in this step are, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is preferably 1 to 500 mm / sec. Moreover, the expand amount in this process is preferably 50 to 200 mm. By such a cool expanding process, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain the semiconductor chip 31 with an adhesive layer. Specifically, in this step, in the adhesive layer 20 in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded, deformation occurs in each region in which the semiconductor chips 31 of the semiconductor wafer divisions 30B are in close contact While being suppressed, a tensile stress generated in the dicing tape 10 acts on a portion facing the dividing groove 30 a between the semiconductor chips 31 in a state where such a deformation suppressing action does not occur. As a result, in the adhesive layer 20, the portion facing the dividing groove 30a between the semiconductor chips 31 is cut.

  In the semiconductor device manufacturing method according to the present invention, a semiconductor wafer 30C manufactured as follows is used instead of the above-described configuration in which the semiconductor wafer 30A or the semiconductor wafer divided body 30B is bonded to the dicing die bond film X. It may be bonded to the dicing die bond film X.

As shown in FIGS. 12A and 12B, first, the modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and wiring structures (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. It is done. In this step, after the wafer processing tape T3 having the adhesive surface T3a is attached to the first surface Wa side of the semiconductor wafer W, the semiconductor processing apparatus collects the wafer inside the wafer while the semiconductor wafer W is held by the wafer processing tape T3. The laser beam combined with the light spots is irradiated to the semiconductor wafer W from the side opposite to the wafer processing tape T3 along the planned dividing line, and the semiconductor wafer W enters the semiconductor wafer W due to ablation by multiphoton absorption. The modified region 30 b is formed. The modified region 30 b is a weakened region for separating the semiconductor wafer W into semiconductor chip units. The method of forming the modified region 30b on the planned dividing line by laser beam irradiation in the semiconductor wafer is described in detail in, for example, JP-A-2002-192370. The laser beam irradiation conditions in the present embodiment are, for example, It adjusts suitably within the range of the following conditions.
<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser pumped Nd: YAG laser Wavelength 1064 nm
Laser beam spot cross section 3.14 × 10 ^-8 cm ²
Oscillation mode Q switch pulse Repetition frequency 100kHz or less Pulse width 1μs or less Output 1mJ or less Laser light quality TEM00
Polarization characteristics Linearly polarized (B) focusing lens Magnification: up to 100 times NA 0.55
Transmittance 100% or less for laser light wavelength (C) Movement speed of the processing table on which the semiconductor substrate is mounted 280 mm / s or less

  Next, as shown in FIG. 12C, while the semiconductor wafer W is held by the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. As a result, the semiconductor wafer 30C that can be singulated into the plurality of semiconductor chips 31 is formed (wafer thinning step). In the present invention, after the semiconductor wafer 30C manufactured as described above is bonded to the dicing die bond film X instead of the semiconductor wafer 30A, each process described above with reference to FIGS. 5 to 9 is performed. It is also good.

  13A and 13B show a first expanding step (cool expanding step) performed after the semiconductor wafer 30C is bonded to the dicing die bond film X. As shown in FIG. In this process, the hollow cylindrical push-up member 43 provided in the expanding device is raised against the dicing tape 10 at the lower side of the dicing die bond film X in the figure, and dicing of the dicing die bond film X bonded to the semiconductor wafer 30C. The tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expanding is performed under the condition that a tensile stress in the range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa is generated in the dicing tape 10. The temperature conditions in this step are, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is preferably 1 to 500 mm / sec. Moreover, the expand amount in this process is preferably 50 to 200 mm. By such a cool expanding process, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain the semiconductor chip 31 with an adhesive layer. Specifically, in this process, a crack is formed in the fragile modified region 30 b in the semiconductor wafer 30 C, and singulation to the semiconductor chip 31 occurs. At the same time, in this step, in the adhesive layer 20 in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded, deformation is suppressed in each region in which the semiconductor chips 31 of the semiconductor wafer 30C are in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the portion of the wafer facing the cracked portion in a state where such a deformation suppressing action does not occur. As a result, in the adhesive layer 20, the portion facing the crack formation portion between the semiconductor chips 31 is cut.

  In the present invention, the dicing die bond film X can be used to obtain a semiconductor chip with an adhesive layer as described above, but an adhesive in the case where a plurality of semiconductor chips are stacked for three-dimensional mounting. It can also be used to obtain a layered semiconductor chip. A spacer may be interposed between the semiconductor chips 31 in such a three-dimensional mounting together with the adhesive layer 21 or may not be interposed.

Example 1
<Adhesive layer>
Acrylic polymer A ₁ (A copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight is 1.2 million, glass transition temperature is 0 ° C., epoxy value is 0.4 eq / kg) 54 parts by mass 3 parts by mass of solid phenol resin (trade name “MEHC-7851 SS”, solid at 23 ° C., manufactured by Meiwa Kasei Co., Ltd.) and liquid phenol resin (trade name “MEH-8000H”, liquid at 23 ° C., Meiwa Chemical Co., Ltd. 3 parts by mass of a company, and 40 parts by mass of silica filler (trade name "SO-C2", average particle diameter is 0.5 μm, manufactured by Admatex Co., Ltd.) are added to methyl ethyl ketone and mixed, and the viscosity at room temperature There adjusting the concentration to be 700 mPa · s, to obtain an adhesive composition C _1. Next, an adhesive composition C ₁ is applied using an applicator on a silicone release-treated surface of a PET separator (38 μm thick) having a silicone release-treated surface, to form a coated film, The coated film was dried by heating at 130 ° C. for 2 minutes. As described above, the adhesive layer having a thickness of 10 μm in Example 1 was formed on the PET separator. The composition of the adhesive layer in Example 1 is listed in Table 1 (in Table 1, the units of each numerical value representing the composition of the composition are the relative “mass” in the composition except for the numerical values related to the MOI described later Section).

<Adhesive layer>
100 mol parts of lauryl acrylate (LA), 20 mol parts of 2-hydroxyethyl acrylate (2 HEA), and 100 mol parts of these monomer components in a reaction vessel equipped with a cooling pipe, a nitrogen introducing pipe, a thermometer, and a stirring device A mixture containing 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 60 ° C. for 10 hours under a nitrogen atmosphere (polymerization reaction). This gave a polymer solution containing an acrylic polymer P _1. For acrylic polymers P ₁ of the polymer solution, the weight average molecular weight (Mw) of 460,000, a glass transition temperature of 9.5 ° C., the molar ratio of LA from units for 2HEA derived units is five. Next, a polymer solution containing the acrylic polymer P _1, 2-meth and methacryloyloxyethyl isocyanate (MOI), the mixture containing the dibutyltin dilaurate as a catalyst for addition reaction at room temperature for 48 hours under air atmosphere Stir (addition reaction). In the reaction solution, the amount of the MOI is a 20 molar parts with respect to the lauryl acrylate 100 parts by mol, the molar ratio of the MOI amount to the total amount of 2HEA derived units and the hydroxyl groups in the acrylic polymer P ₁ 1 It is. Further, in the reaction solution, the amount of dibutyltin dilaurate is 0.01 parts by mass of the acrylic polymer P ₁ 100 parts by weight. By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in a side chain (an acrylic polymer to which an unsaturated functional group-containing isocyanate compound is added) was obtained. Next, 1 part by mass of a polyisocyanate compound (trade name "Corronate L", manufactured by Tosoh Corp.) and 2 parts by mass of a photopolymerization initiator (per 100 parts by mass of acrylic polymer P ₂ ) are added to the polymer solution. The mixture is added with and mixed with the trade name “IRGACURE 127” (manufactured by BASF), and toluene is added to dilute the mixture so that the viscosity of the mixture at room temperature is 500 mPa · s, and the pressure-sensitive adhesive composition C I got _two . Next, a coating film was formed by applying a pressure-sensitive adhesive composition C ₂ using the applicator on the above-mentioned adhesive layer formed on the PET separator, heated for 2 minutes for the coating film at 130 ° C. It dried and formed the 10-micrometer-thick adhesive layer on an adhesive layer. Next, using a laminator, a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB-0104", thickness 130 μm, manufactured by Kurashiki Spinning Co., Ltd.) on the exposed surface of this adhesive layer Were bonded at room temperature. Next, a punching process was performed in which the processing blade was pushed from the side of the EVA base material to the separator. As a result, a disc-shaped dicing die bond film having a diameter of 370 mm having a laminated structure of EVA base material / pressure-sensitive adhesive layer / adhesive layer was formed on the separator. As described above, a dicing die-bonding film of Example 1 having a laminated structure including a dicing tape (EVA base / adhesive layer) and an adhesive layer was produced.

[Examples 2 to 4]
In the formation of the pressure-sensitive adhesive layer, the procedure was carried out except that the blending amount of MOI was changed to 20 mole parts to 16 mole parts (Example 2), 12 mole parts (Example 3), or 8 mole parts (Example 4) Each dicing die bond film of Examples 2 to 4 was produced in the same manner as the dicing die bond film of Example 1.

[Example 5]
<Adhesive layer>
Acrylic polymer A ₂ (trade name "Teisan resin SG-70L", an acrylic copolymer having a nitrile group, weight average molecular weight 900,000, glass transition temperature -13 ° C, carboxylic acid value 5 mg KOH / g, Nagase Chem 18 parts by mass of Tex Co., Ltd., 6 parts by mass of solid epoxy resin (trade name “KI-3000”, solid at 23 ° C., Nippon Steel Sumikin Chemical Co., Ltd.), liquid epoxy resin (trade name “YL-980” , Liquid at 23 ° C, 5 parts by mass from Mitsubishi Chemical Corporation, and 40 parts by mass of silica filler (trade name "SO-C2", average particle diameter is 0.5 μm, manufactured by Admatex Co., Ltd.) It was added and mixed, the viscosity at room temperature by adjusting the concentration to be 700 mPa · s, to obtain an adhesive composition C _3. Next, by applying the adhesive composition C ₃ using an applicator onto a silicone release-treated surface of a PET separator (a thickness of 38 [mu] m) to form a coating film having undergone the surface of a silicone release treatment, The coated film was dried by heating at 130 ° C. for 2 minutes. As described above, an adhesive layer having a thickness of 10 μm in Example 5 was formed on the PET separator.

<Adhesive layer>
The pressure-sensitive adhesive layer of Example 5 is formed in the same manner as the above-mentioned pressure-sensitive adhesive layer in Example 1 except that the compounding amount of MOI is changed to 20 parts by mol to 16 parts by mol, A film was made.

[Example 6]
100 mol parts of 2-ethylhexyl acrylate (2EHA), 20 mol parts of 2-hydroxyethyl acrylate (2HEA), and these monomers in a reaction vessel equipped with a cooling pipe, a nitrogen introducing pipe, a thermometer, and a stirring device A mixture containing 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 60 ° C. for 10 hours under a nitrogen atmosphere (polymerization reaction) . This gave a polymer solution containing an acrylic polymer P _3. For acrylic polymers P ₃ of the polymer solution, the weight average molecular weight (Mw) of 400,000, a glass transition temperature of 60 ° C.. Next, a polymer solution containing the acrylic polymer P _3, 2-meta and methacryloyloxyethyl isocyanate (MOI), the mixture containing the dibutyltin dilaurate as a catalyst for addition reaction at room temperature for 48 hours under air atmosphere Stir (addition reaction). In the reaction solution, the compounding amount of MOI is 16 molar parts with respect to 100 molar parts of the above-mentioned 2-ethylhexyl acrylate. Further, in the reaction solution, the amount of dibutyltin dilaurate is 0.01 parts by mass of the acrylic polymer P ₃ 100 parts by weight. This addition reaction, to obtain a polymer solution containing an acrylic polymer P ₄ having a methacrylate group in the side chain. Next, 1 part by mass of a polyisocyanate compound (trade name "Corronate L", manufactured by Tosoh Corp.) and 2 parts by mass of a photopolymerization initiator (per 100 parts by mass of acrylic polymer P ₄ ) are added to the polymer solution. The mixture is added with and mixed with the trade name “IRGACURE 127” (manufactured by BASF), and toluene is added to dilute the mixture so that the viscosity of the mixture at room temperature is 500 mPa · s, and the pressure-sensitive adhesive composition C I got _four . Except for using the pressure-sensitive adhesive composition C ₄ in the formation of the adhesive layer to the adhesive layer formed from the adhesive composition C ₃ in the same manner as the dicing die-bonding film of Example 5, Example 6 A dicing die bond film was produced.

Comparative Example 1
Dicing die-bonding film of Comparative Example 1 in the same manner as the dicing die-bonding film of Example 1 except that the above-mentioned pressure-sensitive adhesive composition C ₄ was used instead of the above-mentioned pressure-sensitive adhesive composition C ₂ in the formation of the pressure-sensitive adhesive layer. Was produced.

Comparative Example 2
An adhesive layer (10 μm thick) from adhesive composition C ₁ described above was formed on the PET separator as described above for Example 1. The adhesive layer was punched to a diameter of 370 mm with the separator. On the other hand, the above-mentioned pressure-sensitive adhesive composition C ₄ is applied using a applicator on a silicone release-treated surface of a PET separator (38 μm thick) having a silicone release-treated surface to form a coated film The coated film was heat-dried at 130 ° C. for 2 minutes to form a 10 μm thick pressure-sensitive adhesive layer on the PET separator. Next, using a laminator, a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB-0104", thickness 130 μm, manufactured by Kurashiki Spinning Co., Ltd.) on the exposed surface of this adhesive layer Were bonded at room temperature. The laminated sheet body obtained in this manner was punched to a diameter of 370 mm with a separator to form a dicing tape. Next, the dicing tape thus obtained and the adhesive layer were laminated while aligning so that the center of the dicing tape and the center of the adhesive layer coincide with each other. As described above, a dicing die-bonding film of Comparative Example 2 having a laminated structure including a dicing tape (EVA base / adhesive layer) and an adhesive layer was produced.

<Surface free energy>
The surface free energy of the adhesive layer side surface of the adhesive layer and the free surface of the adhesive layer side surface of the adhesive layer after UV curing for each of the dicing die-bonding films of Examples 1 to 6 and Comparative Examples 1 and 2 I asked for energy. Specifically, first, the dicing tape pressure-sensitive adhesive layer in the dicing die-bonding film was irradiated with ultraviolet light from the side of the dicing tape base, and the pressure-sensitive adhesive layer was ultraviolet-cured. In ultraviolet irradiation, a high pressure mercury lamp was used, and the irradiation integrated light amount was 350 mJ / cm ² . Next, the adhesive layer was peeled off from the dicing tape or the pressure-sensitive adhesive layer thereof to expose the surface free energy identification target surface (the pressure-sensitive adhesive layer side surface of the adhesive layer and the adhesive layer side surface of the pressure-sensitive adhesive layer). . Next, using a contact angle meter for each droplet of water (H ₂ O) and methylene iodide (CH ₂ I ₂ ) in contact with the surface free energy identification target under conditions of 20 ° C. and 65% relative humidity The contact angle was measured. Next, using the measured values of the contact angle θw of water and the contact angle θi of methylene iodide, according to the method described in Journal of Applied Polymer Science, vol. 13, p 1741-1747 (1969), γs ^d (surface Dispersion force component of free energy) and γ s ^h (hydrogen bonding component of surface free energy) were determined. Then, a value γs (= γs ^d + γs ^h ) obtained by adding γs ^d and γs ^h is taken as the surface free energy of the target surface. The γ s ^d and γ s ^h for each surface free energy identification target surface can be obtained as a solution of binary simultaneous equations of the following formulas (1) and (2). In the formula (1) (2), γw the surface free energy of the water, Ganmadaburyu ^d the dispersion force component of surface free energy of the water, Ganmadaburyu ^h is the hydrogen bonding component of the surface free energy of the water, the γi methyl iodide surface free energy, the .gamma.i ^d dispersion force component of the surface free energy of the methyl iodide, .gamma.i ^h is the hydrogen bonding component of the surface free energy of the methyl iodide, a known literature values γw = 72.8mJ / m ^{2, γw d = 21.8mJ / m} 2, γw h = 51.0mJ / m 2, γi = 50.8mJ / m 2, γi d = 48.5mJ / m 2, γi h = 2.3mJ / m 2 Was used. The surface free energy γs ₁ (mJ / m ² ) of the adhesive layer side surface of the adhesive layer thus determined, and the surface free energy γs ₂ (mJ) of the adhesive layer side surface of the adhesive layer after UV curing / m ² is listed in Table 1. These differences in surface free energy | γs ₁ −γs ₂ | (mJ / m ² ) are also listed in Table 1.

<Surface roughness>
The surface roughness of the adhesive layer side surface of the adhesive layer and the surface roughness of the adhesive layer side surface of the adhesive layer were examined for each of the dicing die-bonding films of Examples 1 to 6 and Comparative Examples 1 and 2 . Specifically, first, the pressure-sensitive adhesive layer of the dicing tape in the dicing die-bonding film was irradiated with ultraviolet light from the side of the dicing tape substrate, and the pressure-sensitive adhesive layer was ultraviolet-cured. In ultraviolet irradiation, a high pressure mercury lamp was used, and the irradiation integrated light amount was 350 mJ / cm ² . Next, the adhesive layer was peeled off from the dicing tape or the pressure-sensitive adhesive layer thereof. Next, with respect to each of the adhesive layer surface and the adhesive layer surface exposed by this peeling, the arithmetic average surface roughness was determined using a confocal laser microscope (trade name "OPTELICS H300", manufactured by Lasertec Corporation) . The surface roughness Ra ₁ (nm) of the adhesive layer side surface of the adhesive layer, the surface roughness Ra ₂ (nm) of the adhesive layer side surface of the adhesive layer, and the difference between these surface roughnesses | Ra ₁ − Ra ₂ | (nm) is listed in Table 1.

<180 ° peel adhesion of adhesive layer>
About the adhesive bond layer in each dicing die-bonding film of Examples 1-6 and Comparative Examples 1 and 2, 180 degrees peel adhesive strength in 23 ° C was investigated as follows. First, the adhesive layer in the dicing tape was irradiated with ultraviolet light from the side of the base material. In ultraviolet irradiation, a high pressure mercury lamp was used, and the irradiation integrated light amount was 350 mJ / cm ² . Next, a laminate (width 10 mm × length 100 mm) having a laminated structure of a dicing tape base, an adhesive layer, and an adhesive layer was cut out from the dicing die bond film. Next, on the silicon wafer, the adhesive layer side of the laminate was bonded by a pressure bonding operation in which a 2 kg roller was reciprocated once at 60 ° C., and then this bonded body was left at 60 ° C. for 2 minutes. Next, the pressure-sensitive adhesive layer and the substrate were peeled off from the adhesive layer on the silicon wafer. Next, a backing tape (trade name "BT-315", manufactured by Nitto Denko Corporation) is attached to the adhesive layer left on the silicon wafer, the adhesive layer is peeled off from the silicon wafer, and the silicon wafer is peeled off. The adhesive layer was transferred to the backing tape. Thus, an adhesive layer sample piece (width 10 mm × length 100 mm) with a backing tape was produced. The adhesive layer sample piece was bonded to the adherend SUS plate, and the adhesive layer sample piece and the adherend were pressure-bonded by a pressure-bonding operation in which a 2 kg roller is reciprocated once. And, after leaving for 30 minutes at room temperature, using a tensile tester (trade name “Autograph AGS-J”, manufactured by Shimadzu Corporation), 180 ° peel adhesion of the adhesive layer sample to the SUS plate The force (N / 10 nm) was measured. In this measurement, the measurement temperature or peeling temperature was 23 ° C., the tensile angle or peeling angle was 180 °, and the tensile speed was 10 mm / min. The measurement results are listed in Table 1.

[Tensile storage modulus of adhesive layer]
The adhesive layers in Examples 1 to 6 and Comparative Examples 1 and 2 were subjected to dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring apparatus (trade name “Rheogel-E4000”, manufactured by UBM). The tensile storage modulus (MPa) at 23 ° C. was determined. The sample piece to be subjected to the dynamic viscoelasticity measurement was prepared by forming a laminate in which each adhesive layer was laminated to a thickness of 80 μm, and then cutting out the laminate with a size of 4 mm wide × 20 mm long. In this measurement, the initial chuck distance of the sample piece holding chuck is 10 mm, the measurement mode is a tensile mode, the measurement temperature range is −30 ° C. to 100 ° C., the frequency is 10 Hz, and the dynamic strain is ± It was 0.5 μm, and the temperature rising rate was 5 ° C./min. The measurement results are listed in Table 1.

<T-type peeling test>
The peeling force between the pressure-sensitive adhesive layer and the adhesive layer was examined as follows for each of the dicing die-bonding films of Examples 1 to 6 and Comparative Examples 1 and 2. First, a test piece in which the pressure-sensitive adhesive layer was in an uncured state was produced from each dicing die bond film. Specifically, a backing tape (trade name “BT-315”, manufactured by Nitto Denko Corporation) is bonded to the adhesive layer side of the dicing die bond film, and the dicing die bond film with the backing tape has a width of 50 mm × length A test piece of 120 mm in size was cut out. Then, using a tensile tester (trade name “Autograph AGS-J”, manufactured by Shimadzu Corporation), the test piece was subjected to T-peel test to measure peel force (N / 20 mm). In this measurement, the temperature condition was 23 ° C., and the peeling rate was 300 mm / min. On the other hand, test pieces in which the pressure-sensitive adhesive layer was in a cured state were also produced from each dicing die bond film. Specifically, ultraviolet rays of 350 mJ / cm ² are applied to the adhesive layer from the substrate side in the dicing die bond film to cure the adhesive layer, and then a backing tape is formed on the adhesive layer side of the dicing die bond film. (Brand name “BT-315”, manufactured by Nitto Denko Corporation) was bonded, and a test piece of a size of 50 mm wide × 120 mm long was cut out from the dicing die bond film with the backing tape. Then, using a tensile tester (trade name “Autograph AGS-J”, manufactured by Shimadzu Corporation), the test piece was subjected to T-peel test to measure peel force (N / 20 mm). In this measurement, the temperature condition was 23 ° C., and the peeling rate was 300 mm / min. The measurement results in the above T-peel test are listed in Table 1.

<Implementation of Expanding Process and Pickup Process>
Using the respective dicing die-bonding films of Examples 1 to 6 and Comparative Examples 1 and 2, the following bonding process, first expanding process for cutting (cool expanding process), second expanding for separation A process (normal temperature expanding process) and a pickup process were performed.

In the bonding step, the divided semiconductor wafer held by the wafer processing tape (trade name "UB-3083", manufactured by Nitto Denko Corporation) is bonded to the adhesive layer of the dicing die bond film, and then the semiconductor is manufactured. The wafer processing tape was peeled off from the wafer segment. A dicing die-bonding film irradiates an ultraviolet-ray from the side of a substrate to an adhesive layer of dicing tape, and carries out ultraviolet curing of the adhesive layer concerned beforehand. In ultraviolet irradiation, a high pressure mercury lamp was used, and the irradiation integrated light amount was 350 mJ / cm ² . In bonding, a laminator was used, the bonding speed was 10 mm / sec, the temperature condition was 60 ° C., and the pressure condition was 0.15 MPa. In addition, the semiconductor wafer divided body is formed and prepared as follows. First, a bare wafer (12 inches in diameter, 780 μm in thickness, Tokyo) that has been mirror-finished on both sides is held together with the ring frame on a wafer processing tape (trade name “V-12S”, manufactured by Nitto Denko Corporation). About Kako Co., Ltd. From the side of one side, using a dicing machine (trade name "DFD6361", manufactured by Disco Co., Ltd.) using a rotating blade (trade name "NBC-ZH 203 O SE HCBB", Disco Co., Ltd. To form division grooves for dividing into pieces (a grid of 25 .mu.m in width, 50 .mu.m in depth, 10 mm.times.10 mm in one section). Next, a wafer processing tape (trade name "UB-3083", manufactured by Nitto Denko Corporation) is bonded to the dividing groove formation surface, and then the above wafer processing tape (trade name "V-12S") is used as a wafer. It peeled from. Thereafter, using a back grind apparatus (trade name "DGP 8760", manufactured by Disco Corporation), the thickness of the wafer is obtained by grinding from the side of the other surface of the wafer (the surface on which the dividing grooves are not formed). It was thinned down to 25 μm. As described above, the semiconductor wafer divided body (in the state of being held by the wafer processing tape) was formed. The divided semiconductor wafer includes a plurality of semiconductor chips (10 mm × 10 mm).

  The cool expanding process was performed in the cool expanding unit using a die separation apparatus (trade name "Die Separator DDS 2300", manufactured by Disco Co., Ltd.). Specifically, first, a ring frame made of SUS having a diameter of 12 inches in the ring frame affixing area (around the work affixing area) of the adhesive layer in the above-mentioned dicing die bond film accompanied by semiconductor wafer divisions Made at room temperature. Next, the dicing die bond film was set in the apparatus, and the dicing tape of the dicing die bond film with the semiconductor wafer divided body was expanded by the cool expand unit of the apparatus. In this cool expanding step, the temperature is -15 ° C, the expanding speed is 100 mm / sec, and the expanding amount is 7 mm.

  The normal temperature expanding process was performed in the normal temperature expanding unit using a die separation apparatus (trade name "Die Separator DDS 2300", manufactured by Disco Co., Ltd.). Specifically, the dicing tape of the dicing die-bonding film with the semiconductor wafer divided body subjected to the above-mentioned cool expanding process was expanded by the normal temperature expanding unit of the same apparatus. In this normal temperature expanding step, the temperature is 23 ° C., the expanding speed is 1 mm / sec, and the expanding amount is 10 mm. Thereafter, the heat shrinking treatment was performed on the dicing die bond film which has undergone normal temperature expansion. The processing temperature is 200 ° C., and the processing time is 20 seconds.

  In the pick-up process, using a device having a pick-up mechanism (trade name "Die bonder SPA-300", manufactured by Shinkawa Co., Ltd.), pick-up of the semiconductor chip with adhesive layer separated on dicing tape was tried . The pickup speed of the pin member is 1 mm / sec, the pushing amount is 2000 μm, and the pickup evaluation number is 5.

  In the above-described process performed using the dicing die-bonding films of Examples 1 to 6 and Comparative Examples 1 and 2, the dicing tape for the adhesive chip with the separated adhesive layer is used for the cool expanding step. Of the semiconductor chip with an adhesive layer, which is evaluated as excellent (◎) with respect to the floating at the time of breaking, when the floating of the semiconductor chip does not occur, ie, the semiconductor chip with an adhesive layer with an adhesive layer When the area of partial peeling from the dicing tape adhesive layer in the adhesive layer in the above is 40% or more with respect to the total area of the singulated semiconductor chips, it is considered defective (×) for floating at the time of cutting evaluated. Regarding the pickup process, the case where all the five adhesive layer-provided semiconductor chips can be picked up from the dicing tape is evaluated as excellent (ピ ッ ク ア ッ プ) in the pick-up property, and the number of semiconductor chips with adhesive layer picked up from the dicing tape. The pick up property is evaluated as good (性) when 1 is 1 to 4 and the pick up property is evaluated as poor (×) when no semiconductor chip with adhesive layer can be picked up from the dicing tape. did. The evaluation results are listed in Table 1.

[Evaluation]
According to the dicing die-bonding film of Examples 1 to 6, in the cool expanding step, the adhesive layer can be favorably cut without causing the semiconductor chip with the adhesive layer to float from the dicing tape, and further, the pickup In the process, the semiconductor chip with the adhesive layer could be properly picked up.

X dicing die bond film 10 dicing tape 11 base 11e outer peripheral end 12 adhesive layer 12e outer peripheral end 20, 21 adhesive layer 20e outer peripheral end W, 30A, 30C semiconductor wafer 30B semiconductor wafer divided body 30a divided groove 30b modified region 31 semiconductor Chip

Claims (13)

A dicing tape having a laminated structure including a substrate and an adhesive layer;
And an adhesive layer releasably adhering to the pressure-sensitive adhesive layer in the dicing tape,
The surface of the adhesive layer and the surface of the pressure-sensitive adhesive layer for forming the interface between the adhesive layer and the pressure-sensitive adhesive layer may generate a surface free energy difference of 3.5 mJ / m ² or more. the film. Wherein the surface of the pressure-sensitive adhesive layer may have a 32 mJ / m ² or less of the surface free energy, the dicing die-bonding film according to claim 1. The dicing die-bonding film according to claim 1 or 2 whose surface free energy of said surface of said adhesive layer is 30-45 mJ / m ² .   The adhesive layer exhibits a 180 ° peel adhesive strength of 0.1 to 20 N / 10 mm with respect to a SUS plane in a peel test under conditions of 23 ° C., a peel angle of 180 ° and a tensile speed of 10 mm / min. 3. The dicing die bond film according to any one of 3.   The adhesive layer is measured on an adhesive layer sample piece having a width of 4 mm and a thickness of 80 μm under conditions of an initial chuck distance of 10 mm, a frequency of 10 Hz, a dynamic strain ± 0.5 μm, and a heating rate of 5 ° C./min. The dicing die bond film according to any one of claims 1 to 4, which has a tensile storage elastic modulus at 23 ° C of 100 to 4000 MPa. The pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer,
The peeling force between the pressure-sensitive adhesive layer and the adhesive layer after radiation curing is 0.06 to 0.25 N / 20 mm in a T-peel test under conditions of 23 ° C. and a peel speed of 300 mm / min. The dicing die bond film according to any one of claims 1 to 5. The pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer,
The peel force between the pressure-sensitive adhesive layer and the adhesive layer before radiation curing in a T-peel test under conditions of 23 ° C. and a peel speed of 300 mm / min is 2N / 20 mm or more. The dicing die bond film as described in any one of 6.   The dicing die-bonding film according to any one of claims 1 to 7, wherein a difference between an arithmetic mean surface roughness of the surface of the pressure-sensitive adhesive layer and an arithmetic mean surface roughness of the surface of the adhesive layer is 100 nm or less. .   The pressure-sensitive adhesive layer contains an acrylic polymer including a first unit derived from an alkyl (meth) acrylate having a carbon number of 10 or more of an alkyl group and a second unit derived from 2-hydroxyethyl (meth) acrylate. The dicing die bond film according to any one of 1 to 8.   The dicing die bond film according to claim 9, wherein a molar ratio of the first unit to the second unit in the acrylic polymer is 1 to 40.   The dicing die-bonding film according to claim 9 or 10, wherein the acrylic polymer is an adduct of an unsaturated functional group-containing isocyanate compound.   The dicing die-bonding film according to claim 11, wherein the molar ratio of the unsaturated functional group-containing isocyanate compound to the second unit in the acrylic polymer is 0.1 or more.   The dicing die-bonding film according to any one of claims 1 to 12, wherein the outer peripheral end of the adhesive layer is at a distance within 1000 μm from the outer peripheral end of the pressure-sensitive adhesive layer in the film in-plane direction.

Images