JP7033004B2 - Dicing Diebond film and semiconductor device manufacturing method - Google Patents

Description

The present invention relates to a dicing die bond film that can be used in the process of manufacturing a semiconductor device, and a method for manufacturing a semiconductor device.

In the process of manufacturing a semiconductor device, a dicing die bond film may be used to obtain a semiconductor chip having an adhesive film having a size equivalent to that of a chip for die bonding, that is, a semiconductor chip with a die bond film. The dicing die bond film has a size corresponding to the semiconductor wafer to be processed, and is, for example, a dicing tape composed of a base material and an adhesive layer and a die bond film (adhesive) that is detachably adhered to the adhesive layer side thereof. It has an agent layer).

As one of the methods for obtaining a semiconductor chip with a dicing bond film using a dicing die bond film, a method for expanding the dicing die bond film or the dicing tape and cutting the die bond film is known. In this method, first, the semiconductor wafer is bonded on the die bond film of the dicing die bond film. This semiconductor wafer is, for example, one that is later cut together with a die bond film and processed so that it can be fragmented into a plurality of semiconductor chips. Next, an expanding device is used to cut the dicing die bond film or its dicing tape so that a plurality of die bond film pieces, each of which is in close contact with the semiconductor chip, are generated from the dicing film on the dicing tape. It will be expanded. In this expanding step, the semiconductor wafer on the dicing film is also split at a portion corresponding to the split portion in the die bond film, and the semiconductor wafer is fragmented into a plurality of semiconductor chips on the dicing die bond film or the dicing tape. Next, after undergoing, for example, a cleaning step, each semiconductor chip is pushed up from the lower side of the dicing tape by a pin member of the pickup mechanism together with a die bond film having a size equivalent to the chip in close contact with the chip, and then picked up from the dicing tape. Ru. In this way, a semiconductor chip with a die-bonded film can be obtained. The semiconductor chip with a die-bonded film is fixed to an adherend such as a mounting substrate by die-bonding via the die-bonded film (die bonding step). For example, the techniques related to the dicing die bond film used as described above are described in, for example, Patent Documents 1 to 3 below.

Japanese Unexamined Patent Publication No. 2007-2173 Japanese Unexamined Patent Publication No. 2010-177401 Japanese Unexamined Patent Publication No. 2012-23161

The thinner the semiconductor chip, the more likely it is to warp. This is because the semiconductor chip is composed of a plurality of materials having significantly different thermal expansion rates, and is manufactured through various thermal processes. For example, in the die bonding step, the thinner the semiconductor chip, the more likely it is that the dimensional change due to thermal expansion of the semiconductor chip in the high temperature heating process for die bonding induces bending deformation in the thickness direction of the chip. Therefore, as the thickness of the semiconductor wafer bonded to the dicing die bond film becomes thinner, the thin semiconductor chip with the die bond film obtained by the above method tends to warp in the die bonding process.

Further, as the thinning of the semiconductor wafer bonded to the dicing die bond film progresses, the thin semiconductor chip with the die bond film obtained by the above method is said to be said even if it undergoes the die bonding step without causing warpage. Warpage is likely to occur after the step, for example, when the temperature is lowered to room temperature. It is considered that the thinner the semiconductor chip, the more likely it is that the dimensional change due to shrinkage of the semiconductor chip in the temperature lowering process after the die bonding process induces bending deformation in the thickness direction of the chip.

The present invention has been conceived under the above circumstances, and an object thereof is suitable for suppressing the floating of a semiconductor chip in a dicing process and the floating of a semiconductor chip after the die bonding process. It is an object of the present invention to provide a dicing die bond film provided with an adhesive layer as a die bond film suitable for suppressing the above. Another object of the present invention is to provide a method for manufacturing a semiconductor device in which such a dicing die bond film is used.

According to the first aspect of the present invention, a dicing die bond film is provided. This dicing die bond film includes a dicing tape and an adhesive layer as a die bond film. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive layer is removably adhered to the adhesive layer in the dicing tape. The adhesive layer has a 180 ° peeling adhesive force of 0.5 to 5N / 10 mm in the peeling test (first peeling test) under the conditions of 100 ° C., peeling angle 180 ° and peeling speed 30 mm / min with respect to the silicon flat surface. show. The adhesive strength is preferably 0.6 to 3N / 10 mm, more preferably 0.7 to 2N / 10 mm. At the same time, the adhesive layer has a 180 ° peeling adhesive force of 3 to 15 N / 10 mm in a peeling test (second peeling test) under the conditions of 23 ° C, a peeling angle of 180 ° and a peeling speed of 30 mm / min with respect to the silicon flat surface. Is shown. The adhesive strength is preferably 3.2 to 12 N / 10 mm, more preferably 3.4 to 10 N / 10 mm. These adhesive strengths are measured by a peeling test performed on the adhesive layer before curing. The dicing die-bonded film having such a structure can be used to obtain a semiconductor chip with a dicing die-bonded film (adhesive layer) through the expanding step as described above in the manufacturing process of the semiconductor device.

As described above, the adhesive layer of this dicing die bond film as a die bond film has a 180 ° peeling adhesive force shown with respect to a silicon plane in the first peeling test (100 ° C., peeling angle 180 °, peeling speed 30 mm / min). The (first adhesive force) is 0.5 to 5N / 10 mm, preferably 0.6 to 3N / 10 mm, and more preferably 0.7 to 2N / 10 mm. Such a configuration ensures a bonded state between the adhesive layer and the semiconductor chip under high temperature conditions, for example, in the die bonding step of the semiconductor chip with the adhesive layer obtained through the expand step as described above. It is suitable for suppressing the floating of the semiconductor chip. For example, it is as shown by the Examples and Comparative Examples described later.

As described above, the adhesive layer of this dicing die bond film as a die bond film has a 180 ° peeling adhesive force shown with respect to a silicon plane in the second peeling test (23 ° C, peeling angle 180 °, peeling speed 30 mm / min). The (second adhesive force) is 3 to 15 N / 10 mm, preferably 3.2 to 12 N / 10 mm, and more preferably 3.4 to 10 N / 10 mm. Such a configuration ensures a temperature lowering process after the dicing process and a bonded state under room temperature conditions between the adhesive layer maintained in the bonded state during the die bonding process and the semiconductor chip, and the semiconductor chip is lifted. Suitable for suppressing. For example, it is as shown by the Examples and Comparative Examples described later.

As described above, the dicing die bond film is suitable for suppressing the floating of the semiconductor chip in the die bonding process of the semiconductor chip with the adhesive layer, and also suitable for suppressing the lifting of the semiconductor chip after the die bonding process. ..

The adhesive layer of this dicing die bond film has an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10 ° C./min for an adhesive layer sample piece having a width of 10 mm and a thickness of 200 μm. The loss elastic modulus at 100 ° C. measured under the above conditions is preferably 0.1 to 0.5 MPa, more preferably 0.12 to 0.45 MPa. Such a configuration is suitable for ensuring the wettability at 100 ° C. and its vicinity in the adhesive layer and realizing the above-mentioned first adhesive force. The loss elastic modulus can be obtained based on the dynamic viscoelasticity measurement performed using the dynamic viscoelasticity measuring device.

The adhesive layer of this dicing die bond film has an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10 ° C./min for an adhesive layer sample piece having a width of 10 mm and a thickness of 200 μm. The maximum value of the loss tangent measured under the above conditions in the range of 25 to 50 ° C. is 0.8 or more. Such a configuration is suitable for ensuring the wettability at 25 to 50 ° C. and its vicinity in the adhesive layer and realizing the above-mentioned second adhesive force. The loss tangent can be determined based on the dynamic viscoelasticity measurement performed using the dynamic viscoelasticity measuring device.

The adhesive layer of this dicing die bond film is 180 ° peeled at 5N / 10 mm or more in the peeling test (third peeling test) under the conditions of -15 ° C, peeling angle 180 ° and peeling speed 30 mm / min with respect to the silicon plane. Shows adhesive strength. This adhesive strength is preferably 5.5 N / 10 mm or more, more preferably 6 N / 10 mm or more. In such a configuration, when the above-mentioned expanding step involving splitting of the adhesive layer, which is a die bond film, is carried out at a low temperature of, for example, −10 ° C. or lower, peeling occurs between the adhesive layer and the semiconductor chip in the step. It is suitable for suppressing the occurrence.

The adhesive layer of this dicing die bond film has a weight loss rate of 0.8% at 100 ° C. in a weight loss measurement under conditions of a nitrogen atmosphere, a reference weight temperature of 23 ° C. ± 2 ° C., and a heating rate of 10 ° C./min. It is less than or equal to, preferably 0.6% or less, and more preferably 0.5% or less. Such a configuration is preferable from the viewpoint of suppressing a decrease in the adhesive force of the adhesive layer due to contamination of the semiconductor chip by the outgas component from the adhesive layer. The rate of weight loss of the adhesive layer can be measured, for example, using a differential thermal-thermogravimetric simultaneous measuring device.

Preferably, the adhesive layer of the dicing die bond film contains a resin and a filler, and the resin contains 50 to 95% by mass of an acrylic resin and a thermosetting resin. Such a configuration is preferable from the viewpoint of the balance between the wettability and the holding power of the adhesive layer with respect to the semiconductor chip in the process at a high temperature of, for example, about 100 ° C. The weight average molecular weight of the acrylic resin is preferably 500,000 or less, more preferably 480000 or less, and more preferably 450,000 or less. Such a configuration is preferable from the viewpoint of the balance between the wettability and the holding power of the adhesive layer with respect to the semiconductor chip in the process at a high temperature of, for example, about 100 ° C. The filler content of the adhesive layer is preferably 35 to 60% by mass, more preferably 40 to 55% by mass, and more preferably 42 to 52% by mass. Such a configuration is suitable for balancing the splittability and the cohesive force in the expanding step in the adhesive layer.

According to the second aspect of the present invention, a method for manufacturing a semiconductor device is provided. This semiconductor device manufacturing method includes at least the following first step, second step, and third step. In the first step, a semiconductor wafer that can be fragmented into a plurality of semiconductor chips or a semiconductor wafer including a plurality of semiconductor chips on the side of the adhesive layer in the above-mentioned dicing die bond film according to the first aspect of the present invention. The divided bodies are pasted together. In the second step, the dicing die bond film is expanded to cut the adhesive layer to obtain a semiconductor chip with an adhesive layer. The temperature condition in the second step is preferably 0 ° C. or lower. In the third step (die bonding step), the semiconductor chip with the adhesive layer is die-bonded onto the substrate or another semiconductor chip. The semiconductor device manufacturing method having such a configuration in which the above-mentioned dicing die bond film according to the first aspect of the present invention is used is suitable for suppressing the floating of the semiconductor chip in the die bonding step and after the die bonding step. Suitable for suppressing the floating of semiconductor chips.

It is sectional drawing of the dicing die bond film which concerns on one Embodiment of this invention. The dicing die bond film shown in FIG. 1 represents a part of the steps in the method for manufacturing a semiconductor device using the dicing die bond film. The process following the process shown in FIG. 2 is represented. The process following the process shown in FIG. 3 is represented. The process following the process shown in FIG. 4 is represented. The process following the process shown in FIG. 5 is represented. The process following the process shown in FIG. 6 is represented. A part of the steps in the modification of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used is shown. A part of the steps in the modification of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used is shown. A part of the steps in the modification of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used is shown. A part of the steps in the modification of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used is shown.

FIG. 1 is a schematic cross-sectional view of a dicing die bond film X according to an embodiment of the present invention. The dicing die bond film X has a laminated structure including a dicing tape 10 and an adhesive layer 20 as a dicing film. The dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12. The pressure-sensitive adhesive layer 12 has a pressure-sensitive adhesive surface 12a on the adhesive layer 20 side. The adhesive layer 20 includes a work-attached and worn area, and is removably adhered to the adhesive layer 12 of the dicing tape 10 or the adhesive surface 12a thereof. The dicing die bond film X can be used in an expanding step as described below, for example, in the process of obtaining a semiconductor chip with a dicing film in the manufacture of a semiconductor device. Further, the dicing die bond film X has a disk shape having a size corresponding to the semiconductor wafer to be processed in the manufacturing process of the semiconductor device, and the diameter thereof is, for example, in the range of 345 to 380 mm (12-inch wafer compatible type). It is in the range of 245 to 280 mm (8-inch wafer compatible type), 195 to 230 mm (6 inch wafer compatible type), or 495 to 530 mm (18 inch wafer compatible type).

The base material 11 of the dicing tape 10 is an element that functions as a support in the dicing tape 10 or the dicing die bond film X. The base material 11 is, for example, a plastic base material, and a plastic film can be preferably used as the plastic base material. Examples of the constituent material of the plastic base material include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyetherimide, polyamide, total aromatic polyamide, and polyphenyl sulfide. Examples include aramid, fluororesin, cellulose-based resin, and silicone resin. Examples of the polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolypolypoly, polybutene, polymethylpentene, and ethylene. -Vinyl acetate copolymer (EVA), ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer. Can be mentioned. Examples of the polyester include polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The base material 11 may be made of one kind of material or may be made of two or more kinds of materials. The base material 11 may have a single-layer structure or a multi-layer structure. When the base material 11 is made of a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film. When the pressure-sensitive adhesive layer 12 on the base material 11 has ultraviolet curability as described later, it is preferable that the base material 11 has ultraviolet transparency.

When the dicing tape 10 or the base material 11 is shrunk by, for example, partial heating in the process of using the dicing die bond film X, the base material 11 is preferably heat-shrinkable. From the viewpoint of ensuring good heat shrinkage in the base material 11, the base material 11 preferably contains an ethylene-vinyl acetate copolymer as a main component. The main component of the base material 11 is a component that occupies the largest mass ratio among the constituent components of the base material. When the base material 11 is made of a plastic film, the base material 11 is preferably a biaxially stretched film in order to realize isotropic heat shrinkage of the dicing tape 10 or the base material 11. The dicing tape 10 to the base material 11 has a heat shrinkage rate of, for example, 2 to 30% in a heat treatment test conducted under the conditions of a heat temperature of 100 ° C. and a heat treatment time of 60 seconds.

The surface of the base material 11 on the pressure-sensitive adhesive layer 12 side may be subjected to a physical treatment, a chemical treatment, or an undercoating treatment for enhancing the adhesion to the pressure-sensitive adhesive layer 12. Physical treatments include, for example, corona treatment, plasma treatment, sandmat processing, ozone exposure treatment, flame exposure treatment, high voltage impact exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment. It is preferable that the treatment for enhancing the adhesion is applied to the entire surface of the base material 11 on the pressure-sensitive adhesive layer 12 side.

The thickness of the base material 11 is preferably 40 μm or more, more preferably 50 μm or more, and more preferably, from the viewpoint of ensuring the strength for the base material 11 to function as a support in the dicing tape 10 or the dicing die bond film X. Is 55 μm or more, more preferably 60 μm or more. Further, from the viewpoint of achieving appropriate flexibility in the dicing tape 10 or the dicing die bond film X, the thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less, and more preferably 150 μm or less. ..

The pressure-sensitive adhesive layer 12 of the dicing tape 10 contains a pressure-sensitive adhesive. The adhesive may be an adhesive (adhesive-reducing adhesive) that can intentionally reduce the adhesive force by an external action such as irradiation or heating, or may be adhesive depending on the external action. It may be a pressure-sensitive adhesive (adhesive strength non-reducing type pressure-sensitive adhesive) in which the force is hardly reduced or not reduced at all. Whether to use a pressure-reducing adhesive or a non-reducing adhesive as the adhesive in the adhesive layer 12 is a piece of a semiconductor chip that is individualized using a dicing die bond film X. It can be appropriately selected according to the usage mode of the dicing die bond film X, such as the method and conditions for dicing.

When a pressure-reducing pressure-sensitive adhesive is used as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, in the process of using the dicing die bond film X, the pressure-sensitive adhesive layer 12 exhibits a relatively high adhesive strength and a relatively low adhesive strength. It is possible to use the indicated state properly. For example, when the dicing die bond film X is used in the expanding step described later, the high adhesive strength state of the adhesive layer 12 is utilized in order to suppress / prevent the adhesive layer 20 from floating or peeling from the adhesive layer 12. On the other hand, after that, in the pickup step described later for picking up the semiconductor chip with the adhesive layer from the dying tape 10 of the dying die bond film X, in order to facilitate picking up the semiconductor chip with the adhesive layer from the adhesive layer 12. It is possible to utilize the low adhesive strength state of the pressure-sensitive adhesive layer 12.

Examples of such a pressure-reducing pressure-sensitive adhesive include a radiation-curable pressure-sensitive adhesive (radiation-curable pressure-sensitive adhesive) and a heat-foaming type pressure-sensitive adhesive. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of pressure-reducing pressure-sensitive adhesive may be used, or two or more types of pressure-reducing pressure-sensitive adhesive may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 12 may be a pressure-reducing pressure-sensitive adhesive. And other sites may be formed from a non-adhesive non-reducing pressure-sensitive adhesive. When the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers forming the laminated structure may be formed of the pressure-reducing pressure-sensitive adhesive, and some layers in the laminated structure may be the pressure-reducing pressure-sensitive adhesive. It may be formed from.

As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, a type of pressure-sensitive adhesive that is cured by irradiation with electron beam, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used. A curable type pressure-sensitive adhesive (ultraviolet curable pressure-sensitive adhesive) can be particularly preferably used.

Examples of the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 include a base polymer such as an acrylic pressure-sensitive adhesive and a radiation-polymerizable monomer having a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples thereof include additive-type radiation-curable pressure-sensitive adhesives containing components and oligomer components.

The acrylic polymer described above preferably contains a monomer unit derived from an acrylic acid ester and / or a methacrylic acid ester as the monomer unit having the largest mass ratio. In the following, "(meth) acrylic" means "acrylic" and / or "methacrylic", and "(meth) acrylate" means "acrylate" and / or "methacrylate".

Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer include hydrocarbon groups such as (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester. Included (meth) acrylic acid esters. Examples of the (meth) acrylic acid alkyl ester include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester and iso of (meth) acrylic acid. Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, Examples include octadecyl ester and ecosil ester. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include (meth) acrylic acid phenyl and (meth) acrylic acid benzyl. As the monomer component for forming the monomer unit of the acrylic polymer, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. As the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer, a (meth) acrylic acid alkyl ester having 8 or more carbon atoms in an alkyl group is preferable, and 2-ethylhexyl acrylic acid and dodecyl acrylic acid are more preferable. .. Further, in order to appropriately develop the basic properties such as the adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of the (meth) acrylic acid ester in all the monomer components for forming the acrylic polymer. Is preferably 40% by mass or more, more preferably 60% by mass or more.

The acrylic polymer may contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid ester in order to modify its cohesive force, heat resistance and the like. Such other monomers include functionalities such as, for example, carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, and acrylonitrile. Group-containing monomers can be mentioned. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, 2-carboxyethyl (meth) acrylic acid, 5-carboxypentyl (meth) acrylic acid, itaconic acid, maleic acid, fumaric acid, and crotonic acid. .. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, and (. Examples include 8-hydroxyoctyl acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxydodecyl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methyl propane sulfonic acid, (meth) acrylamide propane sulfonic acid, and sulfopropyl (meth) acrylate. .. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacryloyl phosphate. As the other copolymerizable monomer for the acrylic polymer, one kind of monomer may be used, or two or more kinds of monomers may be used.

The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as a (meth) acrylic acid ester in order to form a crosslinked structure in the polymer skeleton. Such polyfunctional monomers include, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropantri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, polyglycidyl (meth) acrylate, polyester (meth) acrylate, and urethane ( Meta) acrylate can be mentioned. As the monomer component for the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. The ratio of the polyfunctional monomer in all the monomer components for forming the acrylic polymer is preferable in order to appropriately express the basic properties such as the tackiness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12. It is 40% by mass or less, more preferably 30% by mass or less.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Polymerization methods include, for example, solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the method for manufacturing a semiconductor device in which the dicing tape 10 or the dicing die bond film X is used, it is preferable that the amount of low molecular weight substances in the pressure-sensitive adhesive layer 12 in the dicing tape 10 or the dicing die bond film X is small. The weight average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000.

The pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may contain, for example, an external cross-linking agent in order to increase the weight average molecular weight of the base polymer such as an acrylic polymer. Examples of the external cross-linking agent for reacting with a base polymer such as an acrylic polymer to form a cross-linked structure include polyisocyanate compounds, epoxy compounds, polyol compounds (polyphenol-based compounds and the like), aziridine compounds, and melamine-based cross-linking agents. .. The content of the external cross-linking agent in the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer is preferably 6 parts by mass or less, and more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the base polymer.

Examples of the above-mentioned radiopolymerizable monomer component for forming a radiation-curable pressure-sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol tetra (meth). Examples include acrylates, dipentaerythritol monohydroxypenta (meth) acrylates, dipentaerythritol hexa (meth) acrylates, and 1,4-butanediol di (meth) acrylates. Examples of the above-mentioned radiopolymerizable oligomer component for forming a radiation-curable pressure-sensitive adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and have a molecular weight of about 100 to 30,000. Things are appropriate. The total content of the radiation-polymerizable monomer component and the oligomer component in the radiation-curable pressure-sensitive adhesive is determined within a range in which the adhesive strength of the formed pressure-sensitive adhesive layer 12 can be appropriately reduced by irradiation, and is determined by an acrylic polymer or the like. For example, it is 5 to 500 parts by mass, preferably 40 to 150 parts by mass with respect to 100 parts by mass of the base polymer. Further, as the additive-type radiation-curable pressure-sensitive adhesive, for example, those disclosed in Japanese Patent Application Laid-Open No. 60-196956 may be used.

The radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 contains, for example, a polymer side chain having a functional group such as a radiation-polymerizable carbon-carbon double bond, or a base polymer having a functional group at the end of the polymer main chain in the polymer main chain. Also included is an intrinsically curable pressure-sensitive adhesive. Such an intrinsically curable pressure-sensitive adhesive is suitable for suppressing an unintended change in adhesive properties over time due to the movement of low molecular weight components in the formed pressure-sensitive adhesive layer 12.

As the base polymer contained in the intrinsic radiation curable pressure-sensitive adhesive, a polymer having an acrylic polymer as a basic skeleton is preferable. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer in the additive-type radiation-curable pressure-sensitive adhesive can be adopted. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer. After obtaining the compound, a compound having a predetermined functional group (second functional group) capable of reacting with the first functional group and having a radiopolymerizable carbon-carbon double bond can be obtained as carbon-carbon. Examples thereof include a method of subjecting an acrylic polymer to a condensation reaction or an addition reaction while maintaining the radiation polymerizable property of the double bond.

Examples of the combination of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group. And hydroxy groups. Of these combinations, a combination of a hydroxy group and an isocyanate group or a combination of an isocyanate group and a hydroxy group is preferable from the viewpoint of easiness of reaction tracking. Further, since it is technically difficult to produce a polymer having a highly reactive isocyanate group, the above-mentioned first functionality on the acrylic polymer side is that it is easy to produce or obtain an acrylic polymer. It is more preferable that the group is a hydroxy group and the second functional group is an isocyanate group. In this case, the isocyanate compound having both a radiopolymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, a radiopolymerizable unsaturated functional group-containing isocyanate compound is, for example, methacryloyl isocyanate, 2 -Methacryloyloxyethyl isocyanate (MOI), and m-isopropenyl-α, α-dimethylbenzylisocyanate.

The radiation curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketor compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphor. Examples include quinone, halogenated ketones, acylphosphinoxides, and acylphosphonates. Examples of the α-ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, and 2-methyl-2-hydroxypro. Examples include piophenone and 1-hydroxycyclohexylphenylketone. Examples of the acetophenone compound include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio)-. Phenyl] -2-morpholinopropane-1 can be mentioned. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal-based compound include benzyldimethyl ketal. Examples of the aromatic sulfonyl chloride compound include 2-naphthalene sulfonyl chloride. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of benzophenone compounds include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of the thioxanthone compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl. Thioxanthone is mentioned. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of a base polymer such as an acrylic polymer.

The above-mentioned heat-foaming type pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive containing a component that foams or expands by heating. Examples of the component that foams or expands by heating include a foaming agent and a heat-expandable microsphere.

Examples of the foaming agent for the heat foaming pressure-sensitive adhesive include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium boron hydride, and azides. Examples of the organic foaming agent include alkane hydrochloride, such as trichloromonofluoromethane and dichloromonofluoromethane, azo compounds such as azobisisobutyronitrile, azodicarboxylicamide, and barium azodicarboxylate, and paratoluenesulfonyl. Hydrazide and diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis (benzenesulfonylhydrazide), hydrazine compounds such as allylbis (sulfonylhydrazide), ρ-toluylenesulfonyl semicarbazide and 4,4'-oxybis Semicarbazide compounds such as (benzenesulfonyl semicarbazide), triazole compounds such as 5-morphory-1,2,3,4-thiatriazole, as well as N, N'-dinitrosopentamethylenetetramine and N, N'-dimethyl. Examples thereof include N-nitroso compounds such as -N, N'-dinitrosoterephthalamide.

Examples of the heat-expandable microspheres for the heat-foaming pressure-sensitive adhesive include microspheres having a structure in which a substance that easily gasifies and expands by heating is enclosed in a shell. Substances that are easily gasified and expanded by heating include, for example, isobutane, propane, and pentane. A heat-expandable microsphere can be produced by encapsulating a substance that easily gasifies and expands by heating in a shell-forming substance by a core selvation method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal meltability or a substance that can explode due to the action of thermal expansion of the encapsulating substance can be used. Examples of such substances include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethylmethacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.

Examples of the pressure-sensitive non-reducing pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 include pressure-sensitive pressure-sensitive adhesives. As the pressure-sensitive pressure-sensitive adhesive, for example, an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive using an acrylic polymer as a base polymer can be used. When the pressure-sensitive adhesive layer 12 contains an acrylic pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic pressure-sensitive adhesive preferably contains a monomer unit derived from a (meth) acrylic acid ester in a mass ratio. Included as the most abundant monomer unit in. Examples of such an acrylic polymer include the acrylic polymers described above with respect to the radiation curable pressure-sensitive adhesive.

As the pressure-sensitive pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, a pressure-sensitive adhesive in the form of the above-mentioned radiation-curable pressure-sensitive adhesive cured by irradiation may be used. Such a cured radiation-curable type pressure-sensitive adhesive can exhibit adhesiveness due to the polymer component depending on the content of the polymer component even if the adhesive force is reduced by irradiation, and is used in a predetermined manner. In the embodiment, it is possible to exert the adhesive force that can be used to adhesively hold the adherend.

In the pressure-sensitive adhesive layer 12 of the present embodiment, one kind of non-reducing adhesive strength type adhesive may be used, or two or more kinds of non-reducing pressure-sensitive adhesive strength may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed of a non-reducing adhesive strength type adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a non-reducing pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a non-reduced pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 12 may be a non-reduced pressure-sensitive adhesive. It may be formed from a pressure-sensitive adhesive, and other portions may be formed from a pressure-reducing pressure-sensitive adhesive. When the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers forming the laminated structure may be formed of a non-reduced adhesive strength type adhesive, and some layers in the laminated structure may be a non-reduced adhesive strength type. It may be formed from an adhesive.

In addition to the above-mentioned components, the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may contain a cross-linking accelerator, a pressure-sensitive adhesive, an antiaging agent, a coloring agent, and the like. Colorants include pigments and dyes. Further, the colorant may be a compound that is colored by being irradiated with radiation. Examples of such compounds include leuco dyes.

The thickness of the pressure-sensitive adhesive layer 12 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and even more preferably 5 to 25 μm. Such a configuration is suitable, for example, when the pressure-sensitive adhesive layer 12 contains a radiation-curable pressure-sensitive adhesive, in order to balance the adhesive force of the pressure-sensitive adhesive layer 12 with respect to the adhesive layer 20 before and after radiation curing. ..

The adhesive layer 20 of the dicing die bond film X has a function as a thermosetting adhesive for die bonding. In the present embodiment, the adhesive for forming the adhesive layer 20 may have a composition containing a thermosetting resin and, for example, a thermoplastic resin as a binder component, and may react with the curing agent to form a bond. It may have a composition comprising a thermoplastic resin with a possible thermosetting functional group. When the adhesive for forming the adhesive layer 20 has a composition containing a thermoplastic resin with a thermosetting functional group, the adhesive does not need to further contain a thermosetting resin (epoxy resin or the like). Such an adhesive layer 20 may have a single-layer structure or a multi-layer structure.

When the adhesive layer 20 contains a thermosetting resin together with a thermoplastic resin, the thermosetting resin includes, for example, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and heat. Examples thereof include curable polyimide resin. As the thermosetting resin in the adhesive layer 20, one kind of resin may be used, or two or more kinds of resins may be used. Epoxy resin is preferable as the thermosetting resin contained in the adhesive layer 20 because the content of ionic impurities and the like that can cause corrosion of the semiconductor chip to be die-bonded tends to be small. Further, as the curing agent for the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type and orthocresol. Examples thereof include novolak type, trishydroxyphenylmethane type, tetraphenylol ethane type, hydantin type, trisglycidyl isocyanurate type, and glycidylamine type epoxy resins. Novolac type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylol ethane type epoxy resin are adhesives because they are highly reactive with phenol resin as a curing agent and have excellent heat resistance. It is preferable as the epoxy resin contained in the layer 20.

Examples of the phenol resin that can act as a curing agent for the epoxy resin include novolak type phenol resin, resol type phenol resin, and polyoxystyrene such as polyparaoxystyrene. Examples of the novolak type phenol resin include phenol novolac resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin. As the phenol resin that can act as a curing agent for the epoxy resin, one kind of phenol resin may be used, or two or more kinds of phenol resins may be used. Phenol novolac resin and phenol aralkyl resin tend to improve the connection reliability of the adhesive when used as a curing agent for the epoxy resin as the adhesive for die bonding. Therefore, the epoxy contained in the adhesive layer 20 Preferable as a resin curing agent.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the adhesive layer 20, the phenol resin preferably has a hydroxyl group in the phenol resin per equivalent amount of epoxy groups in the epoxy resin component. It is contained in the adhesive layer 20 in an amount of 5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

The content ratio of the thermosetting resin in the adhesive layer 20 is preferably 5 to 60% by mass, more preferably 10 to 50, from the viewpoint of appropriately exhibiting the function as a thermosetting adhesive in the adhesive layer 20. It is mass%.

Examples of the thermoplastic resin contained in the adhesive layer 20 include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, and ethylene-acrylic acid ester copolymer. , Polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, and fluororesin. Be done. As the thermoplastic resin in the adhesive layer 20, one kind of resin may be used, or two or more kinds of resins may be used. As the thermoplastic resin contained in the adhesive layer 20, an acrylic resin is preferable because it has few ionic impurities and high heat resistance, so that it is easy to secure the bonding reliability by the adhesive layer 20.

The acrylic resin contained as the thermoplastic resin in the adhesive layer 20 preferably contains a monomer unit derived from the (meth) acrylic acid ester as the main monomer unit having the largest mass ratio. As such a (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above for the acrylic polymer which is one component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be used. can. The acrylic resin contained as the thermoplastic resin in the adhesive layer 20 may contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid ester. Such other monomer components include, for example, functionalities such as a carboxy group-containing monomer, an acid anhydride monomer, a hydroxy group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide, and acrylonitrile. Group-containing monomers and various polyfunctional monomers can be mentioned. Specifically, acrylic polymers that are one component of a radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be copolymerized with (meth) acrylic acid esters. Other monomers similar to those described above can be used. From the viewpoint of achieving high cohesive force in the adhesive layer 20, the acrylic resin contained in the adhesive layer 20 is preferably composed of a (meth) acrylic acid ester, a carboxy group-containing monomer, and a nitrogen atom-containing monomer. , A copolymer with a polyfunctional monomer. As the (meth) acrylic acid ester, a (meth) acrylic acid alkyl ester having an alkyl group having 4 or less carbon atoms is preferable. As the polyfunctional monomer, a polyglycidyl-based polyfunctional monomer is preferable. The acrylic resin contained in the adhesive layer 20 is more preferably a copolymer of ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile, and polyglycidyl (meth) acrylate.

The weight average molecular weight of the thermoplastic resin, for example, an acrylic resin, in the adhesive layer 20 is preferably 500,000 or less, more preferably 480000 or less, and more preferably 450,000 or less. The molecular weight is, for example, 50,000 or more.

The glass transition temperature of the thermoplastic resin, for example, an acrylic resin, in the adhesive layer 20 is preferably 25 to 50 ° C. As the glass transition temperature of the polymer, the glass transition temperature (theoretical value) obtained based on the following Fox formula can be used. The Fox formula is a relational expression between the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of the homopolymer for each constituent monomer in the polymer. In the Fox formula below, Tg represents the glass transition temperature (° C.) of the polymer, Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (° C.) of the homopolymer of the monomer i. ) Is shown. Literature values can be used for the glass transition temperature of the homopolymer. For example, "New Polymer Bunko 7 Introduction to Synthetic Resins for Paints" (Kyozo Kitaoka, Polymer Publishing Association, 1995) and "Acrylic Ester Catalog (1997 Edition)" (Mitsubishi Rayon Co., Ltd.) have various single weights. The glass transition temperature of the coalescence is mentioned. On the other hand, the glass transition temperature of the homopolymer of the monomer can also be obtained by the method specifically described in JP-A-2007-51271.

Fox formula 1 / (273 + Tg) = Σ [Wi / (273 + Tgi)]

When the adhesive layer 20 contains a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming this thermosetting functional group-containing acrylic resin preferably contains a monomer unit derived from a (meth) acrylic acid ester as the main monomer unit having the largest mass ratio. As such a (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above for the acrylic polymer which is one component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be used. can. On the other hand, examples of the thermosetting functional group for forming a thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Of these, a glycidyl group and a carboxy group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxy group-containing acrylic resin can be preferably used. Further, as the curing agent for the thermosetting functional group-containing acrylic resin, for example, the above-mentioned external cross-linking agent may be used as a component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12. can. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenol-based compound can be preferably used as the curing agent, and for example, the above-mentioned various phenol resins can be used.

The content ratio of the high molecular weight component or the resin content as described above in the adhesive layer 20 is preferably 50 to 95% by mass, and more preferably 50 to 90% by mass.

The adhesive layer 20 may contain a filler. By blending the filler into the adhesive layer 20, the elastic modulus such as the tensile storage elastic modulus of the adhesive layer 20 and the physical properties such as conductivity and thermal conductivity can be adjusted. Examples of the filler include an inorganic filler and an organic filler, and an inorganic filler is particularly preferable. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, and crystals. In addition to quality silica and amorphous silica, simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon black and graphite can be mentioned. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. One kind of filler may be blended in the adhesive layer 20, or two or more kinds of fillers may be blended. The filler content of the adhesive layer 20 is preferably 35 to 60% by mass, more preferably 40 to 55% by mass, and more preferably 42 to 52% by mass.

When the adhesive layer 20 contains a filler, the average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. The configuration in which the average particle size of the filler is 0.005 μm or more is suitable for realizing high wettability and adhesiveness to an adherend such as a semiconductor wafer in the adhesive layer 20. The configuration in which the average particle size of the filler is 10 μm or less is suitable for enjoying a sufficient filler addition effect in the adhesive layer 20 and ensuring heat resistance. The average particle size of the filler can be obtained, for example, by using a luminous intensity type particle size distribution meter (trade name "LA-910", manufactured by HORIBA, Ltd.).

The adhesive layer 20 may contain one kind or two or more kinds of other components, if necessary. Examples of the other component include a flame retardant, a silane coupling agent, and an ion trapping agent. Flame retardants include, for example, antimony trioxide, antimony pentoxide, and brominated epoxy resins. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, hydroxide-containing antimony (for example, "IXE-300" manufactured by Toa Synthetic Co., Ltd.), and zirconium phosphate having a specific structure (for example, "IXE-300" manufactured by Toa Synthetic Co., Ltd.). IXE-100 "), magnesium silicate (for example," Kyoward 600 "manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (for example," Kyoward 700 "manufactured by Kyowa Chemical Industry Co., Ltd.). A compound capable of forming a complex with a metal ion can also be used as an ion trapping agent. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridyl-based compounds. Of these, a triazole-based compound is preferable from the viewpoint of the stability of the complex formed with the metal ion. Examples of such triazole compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-). 5-Methylphenyl) Benzotriazole 2- (2-Hydroxy-3,5-di-t-butylphenyl) -5-Chlorobenzotriazole 2- (2-Hydroxy-3-t-butyl-5-methylphenyl) )-5-Chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) benzotriazole, 6- (2) -Benzotriazolyl) -4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1- (2,3-dihydroxypropyl) benzotriazole, 1- (1) , 2-Dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t-pentyl-6-{(H-benzotriazole-1-yl) methyl} phenol, 2 -(2-Hydroxy-5-t-butylphenyl) -2H-benzotriazole, octyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2-H-benzotriazole-2-yl)) Phenyl] propionate, 2-ethylhexyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazole-2-yl) phenyl] propionate, 2- (2H-benzotriazole-2) -Il) -6- (1-Methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazole-2-yl) -4-t -Butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) -benzotriazole, 2- (3-t-butyl-2-hydroxy-5) -Methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-Chloro-benzotriazole, 2- [2-hydroxy-3,5-di (1,1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2) H-Benzotriazole-2-yl] -4- (1,1,3,3-tetramethylbutyl) phenol] 2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] Examples thereof include -2H-benzotriazole and methyl-3- [3- (2-H-benzotriazole-2-yl) -5-t-butyl-4-hydroxyphenyl] propionate. Further, a predetermined hydroxyl group-containing compound such as a quinol compound, a hydroxyanthraquinone compound, and a polyphenol compound can also be used as an ion trapping agent. Examples of such hydroxyl group-containing compounds include 1,2-benzenediol, alizarin, anthralphin, tannin, gallate, methyl gallate, and pyrogallol.

The thickness of the adhesive layer 20 is, for example, in the range of 1 to 200 μm, preferably 5 to 40 μm. The configuration in which the thickness of the adhesive layer 20 is 5 μm or more allows the adhesive layer 20 to which the frame member is attached to follow the fine irregularities on the surface of the frame member and exhibit good frame member adhesion. Is preferable. The configuration in which the thickness of the adhesive layer 20 is 40 μm or less is preferable in order to secure the splittability in the expand step described later in the adhesive layer 20.

The adhesive layer 20 has a 180 ° peeling adhesive force of 0.5 to 5 N / 10 mm in a peeling test (first peeling test) under the conditions of 100 ° C., a peeling angle of 180 ° and a peeling speed of 30 mm / min with respect to a silicon flat surface. Is shown. The adhesive strength is preferably 0.6 to 3N / 10 mm, more preferably 0.7 to 2N / 10 mm. At the same time, the adhesive layer 20 has a 180 ° peeling adhesion of 3 to 15 N / 10 mm in a peeling test (second peeling test) under the conditions of 23 ° C., a peeling angle of 180 ° and a peeling speed of 30 mm / min with respect to the silicon flat surface. Show power. The adhesive strength is preferably 3.2 to 12 N / 10 mm, more preferably 3.4 to 10 N / 10 mm. These adhesive strengths are measured by a peeling test performed on the adhesive layer 20 before curing. Further, the adhesive layer 20 has a 180 ° peeling adhesive force of 5N / 10 mm or more in a peeling test (third peeling test) under the conditions of −15 ° C., a peeling angle of 180 ° and a peeling speed of 30 mm / min with respect to the silicon flat surface. Is shown. This adhesive strength is preferably 5.5 N / 10 mm or more, more preferably 6 N / 10 mm or more.

The adhesive layer 20 has an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10 ° C./min for the adhesive layer 20 sample piece having a width of 10 mm and a thickness of 200 μm. The measured elastic modulus at 100 ° C. is preferably 0.1 to 0.5 MPa, more preferably 0.12 to 0.45 MPa. The adhesive layer 20 has an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a temperature rise rate of 10 ° C./min for the adhesive layer 20 sample piece having a width of 10 mm and a thickness of 200 μm. The maximum value of the loss tangent measured under the conditions in the range of 25 to 50 ° C. is 0.8 or more. These loss elastic modulus and loss tangent can be obtained based on the dynamic viscoelasticity measurement performed using the dynamic viscoelasticity measuring device.

The adhesive layer 20 has a weight loss rate of 0.8% or less at 100 ° C. in a weight loss measurement under conditions of a nitrogen atmosphere, a reference weight temperature of 23 ° C. ± 2 ° C., and a temperature rise rate of 10 ° C./min. It is preferably 0.6% or less, more preferably 0.5% or less. The weight loss rate of the cushioning material sheet can be measured using a differential thermal-thermogravimetric simultaneous measuring device. Examples of the device include a differential thermal balance Thermo plus TG8120 manufactured by Rigaku Co., Ltd.

The dicing die bond film X having the above structure can be produced, for example, as follows.

The dicing tape 10 of the dicing die bond film X can be produced by providing the pressure-sensitive adhesive layer 12 on the prepared base material 11. For example, the resin base material 11 is manufactured by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a coextrusion method, or a dry laminating method. be able to. The pressure-sensitive adhesive layer 12 prepares a pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer 12, and then applies the pressure-sensitive adhesive composition on the base material 11 or a predetermined separator (that is, a release liner) to form the pressure-sensitive adhesive composition. It can be formed by forming a layer and, if necessary, drying the pressure-sensitive adhesive composition layer. Examples of the method for applying the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating. The temperature for drying the pressure-sensitive adhesive composition layer is, for example, 80 to 150 ° C., and the time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 12 is formed on the separator, the pressure-sensitive adhesive layer 12 with the separator is attached to the base material 11. As described above, the dicing tape 10 can be manufactured.

For the adhesive layer 20 of the dicing die bond film X, after preparing an adhesive composition for forming the adhesive layer 20, the adhesive composition is applied onto a predetermined separator to form an adhesive composition layer. It can be produced by drying the adhesive composition layer, if necessary. Examples of the method for applying the adhesive composition include roll coating, screen coating, and gravure coating. The temperature for drying the adhesive composition layer is, for example, 70 to 160 ° C., and the time is, for example, 1 to 5 minutes.

In the production of the dicing die bond film X, the adhesive layer 20 is next, for example, pressure-bonded to the pressure-sensitive adhesive layer 12 side of the dicing tape 10. The bonding temperature is, for example, 30 to 50 ° C, preferably 35 to 45 ° C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm, preferably 1 to 10 kgf / cm. When the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer as described above, when the pressure-sensitive adhesive layer 12 is irradiated with radiation such as ultraviolet rays after the bonding of the adhesive layer 20, for example, the pressure-sensitive adhesive layer 12 is adhered from the side of the base material 11. The agent layer 12 is irradiated with radiation, and the irradiation amount is, for example, 50 to 500 mJ / cm ² . In the dicing die bond film X, the region (irradiation region R) where the pressure-sensitive adhesive layer 12 is irradiated as a measure for reducing the adhesive strength is usually a region in the pressure-sensitive adhesive layer 12 excluding the peripheral portion in the adhesive layer 20 bonding region. Is.

For example, as described above, the dicing die bond film X shown in FIG. 1 can be produced.

As described above, the adhesive layer 20 of the dicing die bond film X as the die bond film has 180 ° peeling adhesion shown with respect to the silicon plane in the first peeling test (100 ° C., peeling angle 180 °, peeling speed 30 mm / min). The force (first adhesive force) is 0.5 to 5 N / 10 mm, preferably 0.6 to 3 N / 10 mm, and more preferably 0.7 to 2 N / 10 mm. Such a configuration ensures a bonded state between the adhesive layer 20 and the semiconductor chip under high temperature conditions in the die bonding step of the semiconductor chip with the adhesive layer obtained through the expand step as described later. It is suitable for suppressing the floating of the semiconductor chip.

As described above, the adhesive layer 20 of the dicing die bond film X as the die bond film has 180 ° peeling adhesion shown with respect to the silicon plane in the second peeling test (23 ° C, peeling angle 180 °, peeling speed 30 mm / min). The force (second adhesive force) is 3 to 15 N / 10 mm, preferably 3.2 to 12 N / 10 mm, and more preferably 3.4 to 10 N / 10 mm. Such a configuration ensures a temperature lowering process after the dicing process and a bonded state under room temperature conditions between the adhesive layer 20 whose bonded state is maintained during the die bonding process and the semiconductor chip, so that the semiconductor chip can be configured. Suitable for suppressing floating.

As described above, the dicing die bond film X is suitable for suppressing the floating of the semiconductor chip in the die bonding step of the semiconductor chip with the adhesive layer 20, and also for suppressing the lifting of the semiconductor chip after the die bonding step. Suitable.

The adhesive layer 20 of the dicing die bond film X has an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10 ° C. for a sample piece of the adhesive layer 20 having a width of 10 mm and a thickness of 200 μm. As described above, the loss elastic modulus at 100 ° C. measured under the condition of / minute is preferably 0.1 to 0.5 MPa, more preferably 0.12 to 0.45 MPa. Such a configuration is suitable for ensuring the wettability at 100 ° C. and its vicinity in the adhesive layer 20 and realizing the above-mentioned first adhesive force.

The adhesive layer 20 of the dicing die bond film X has an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10 ° C. for a sample piece of the adhesive layer 20 having a width of 10 mm and a thickness of 200 μm. The maximum value of the loss tangent measured under the condition of / minute in the range of 25 to 50 ° C. is 0.8 or more as described above. Such a configuration is suitable for the adhesive layer 20 in order to secure the wettability at 25 to 50 ° C. and its vicinity and to realize the above-mentioned second adhesive force.

The adhesive layer 20 of the dicing die bond film X has a 180 ° peeling adhesive strength of 5N / 10 mm or more with respect to a silicon plane in the third peeling test (-15 ° C, peeling angle 180 °, peeling speed 30 mm / min). Yes, preferably 5.5 N / 10 mm or more, more preferably 6 N / 10 mm or more. Such a configuration is such that when the above-mentioned expanding step involving splitting of the adhesive layer 20 which is a die bond film is carried out at a low temperature of, for example, −10 ° C. or lower, the adhesive layer 20 and the semiconductor chip are separated from each other in the step. It is suitable for suppressing the occurrence of peeling.

The adhesive layer 20 of the dicing die bond film X has the above-mentioned weight loss rate at 100 ° C. in the weight loss measurement under the conditions of a nitrogen atmosphere, a reference weight temperature of 23 ° C. ± 2 ° C., and a temperature rise rate of 10 ° C./min. As described above, it is 0.8% or less, preferably 0.6% or less, and more preferably 0.5% or less. Such a configuration is preferable from the viewpoint of suppressing a decrease in the adhesive force of the adhesive layer 20 due to contamination of the semiconductor chip by the outgas component from the adhesive layer 20.

Preferably, the adhesive layer 20 of the dicing die bond film X contains a resin and a filler, and the resin contains 50 to 95% by mass of an acrylic resin and a thermosetting resin. Such a configuration is preferable from the viewpoint of the balance between the wettability and the holding power of the adhesive layer 20 with respect to the semiconductor chip in the process at a high temperature of, for example, about 100 ° C. The weight average molecular weight of this acrylic resin is preferably 500,000 or less, more preferably 480000 or less, and more preferably 450,000 or less. Such a configuration is preferable from the viewpoint of the balance between the wettability and the holding power of the adhesive layer 20 with respect to the semiconductor chip in the process at a high temperature of, for example, about 100 ° C. The filler content of the adhesive layer 20 is preferably 35 to 60% by mass, more preferably 40 to 55% by mass, and more preferably 42 to 52% by mass. Such a configuration is suitable for balancing the splitting property and the cohesive force in the expanding step in the adhesive layer 20.

2 to 7 show a semiconductor device manufacturing method according to an embodiment of the present invention.

In the present semiconductor device manufacturing method, first, as shown in FIGS. 2A and 2B, a dividing groove 30a is formed in the semiconductor wafer W (divided groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held in a state where the semiconductor wafer W is held by the wafer processing tape T1. A dividing groove 30a having a predetermined depth is formed on the Wa side of the first surface by using a rotating blade such as a dicing device. The dividing groove 30a is a gap for separating the semiconductor wafer W into semiconductor chip units (in FIGS. 2 to 4, the dividing groove 30a is schematically represented by a thick line).

Next, as shown in FIG. 2C, the wafer processing tape T2 having the adhesive surface T2a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 from the semiconductor wafer W is attached. Is peeled off.

Next, as shown in FIG. 2D, with the semiconductor wafer W held by the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. (Wafer thinning process). The grinding process can be performed using a grinding device equipped with a grinding wheel. By this wafer thinning step, in the present embodiment, a semiconductor wafer 30A that can be fragmented is formed on a plurality of semiconductor chips 31. Specifically, the semiconductor wafer 30A has a portion (connecting portion) for connecting a portion of the wafer to be fragmented into a plurality of semiconductor chips 31 on the second surface Wb side. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 μm, preferably 3 to 20 μm. Is.

Next, as shown in FIG. 3A, the semiconductor wafer 30A held on the wafer processing tape T2 is bonded to the adhesive layer 20 of the dicing die bond film X. After that, as shown in FIG. 3B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die-bond film X is a radiation-curable pressure-sensitive adhesive layer, the semiconductor wafer 30A is attached to the adhesive layer 20 instead of the above-mentioned radiation irradiation in the manufacturing process of the dicing die-bond film X. After the combination, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the side of the base material 11. The irradiation amount is, for example, 50 to 500 mJ / cm ² . In the dicing die bond film X, the region (irradiation region R shown in FIG. 1) where the pressure-sensitive adhesive layer 12 is irradiated as an adhesive force reducing measure is, for example, its peripheral edge in the adhesive layer 20 bonding region in the pressure-sensitive adhesive layer 12. This is the area excluding the part.

Next, after the ring frame 41 is attached on the adhesive layer 12 of the dicing tape 10 in the dicing die bond film X, the dicing die bond film X with the semiconductor wafer 30A is expanded as shown in FIG. 4 (a). It is fixed to the holder 42 of the device.

Next, the first expanding step (cool expanding step) under relatively low temperature conditions is performed as shown in FIG. 4 (b), and the semiconductor wafer 30A is fragmented into a plurality of semiconductor chips 31. At the same time, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain a semiconductor chip 31 with an adhesive layer. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised in contact with the dicing tape 10 at the lower side in the drawing of the dicing die bond film X, and the dicing of the dicing die bond film X bonded to the semiconductor wafer 30A is diced. The tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed under the condition that the dicing tape 10 produces a tensile stress preferably in the range of 15 to 32 MPa, more preferably 20 to 32 MPa. The temperature conditions in the cool expanding step are preferably 0 ° C. or lower, more preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in the cool expanding step is preferably 0.1 to 100 mm / sec. The amount of expansion in the cool expanding step is preferably 3 to 16 mm.

In this step, the thin-walled and fragile portion of the semiconductor wafer 30A is split, resulting in individualization into the semiconductor chip 31. At the same time, in this step, in the adhesive layer 20 in close contact with the adhesive layer 12 of the expanded dicing tape 10, deformation is suppressed in each region in which each semiconductor chip 31 is in close contact, while the semiconductor chip is suppressed. The tensile stress generated in the dicing tape 10 acts on the portion facing the dividing groove between the 31's in a state where such deformation suppressing action does not occur. As a result, the portion of the adhesive layer 20 facing the dividing groove between the semiconductor chips 31 is cut. After this step, as shown in FIG. 4C, the push-up member 43 is lowered to release the expanded state of the dicing tape 10.

Next, the second expanding step under relatively high temperature conditions is performed as shown in FIG. 5A, and the distance (separation distance) between the semiconductor chips 31 with the adhesive layer is widened. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised again, and the dicing tape 10 of the dicing die bond film X is expanded. The temperature condition in the second expanding step is, for example, 10 ° C. or higher, preferably 15 to 30 ° C. The expanding speed (speed at which the push-up member 43 rises) in the second expanding step is, for example, 0.1 to 10 mm / sec, preferably 0.3 to 1 mm / sec. The amount of expansion in the second expanding step is, for example, 3 to 16 mm. In this step, the separation distance of the semiconductor chip 31 with an adhesive layer is widened to such an extent that the semiconductor chip 31 with an adhesive layer can be appropriately picked up from the dicing tape 10 in the pickup step described later. After this step, as shown in FIG. 5B, the push-up member 43 is lowered to release the expanded state of the dicing tape 10. In order to prevent the separation distance of the semiconductor chip 31 with the adhesive layer on the dicing tape 10 from being narrowed after the expanded state is released, the portion outside the semiconductor chip 31 holding region of the dicing tape 10 before the expanded state is released. Is preferably heated and shrunk.

Next, after undergoing a cleaning step as necessary to clean the semiconductor chip 31 side of the dicing tape 10 with the semiconductor chip 31 with an adhesive layer using a cleaning liquid such as water, an adhesive is used, as shown in FIG. The layered semiconductor chip 31 is picked up from the dicing tape 10 (pickup process). For example, with respect to the semiconductor chip 31 with an adhesive layer to be picked up, the pin member 44 of the pickup mechanism is raised on the lower side in the drawing of the dicing tape 10 and pushed up through the dicing tape 10, and then sucked and held by the suction jig 45. do. In the pickup step, the push-up speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 44 is, for example, 50 to 3000 μm.

Next, as shown in FIG. 7A, the picked up semiconductor chip 31 with an adhesive layer is temporarily fixed to a predetermined adherend 51 via the adhesive layer 21 (die bonding step). .. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. In this step, a predetermined number of semiconductor chips 31 with an adhesive layer are sequentially laminated on a semiconductor chip 31 die-bonded on a substrate via an adhesive layer 21 according to the configuration of a semiconductor device for manufacturing purposes. You may.

Next, as shown in FIG. 7B, the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the adherend 51 are electrically connected via the bonding wire 52 (not shown). Wire bonding process). The connection between the electrode pad of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 is realized by ultrasonic welding accompanied by heating, and is performed so as not to thermally cure the adhesive layer 21. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature in wire bonding is, for example, 80 to 250 ° C.

Next, as shown in FIG. 7C, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 on the adherend 51 and the bonding wire 52 (sealing step). In this step, the adhesive layer 21 is thermally cured. In this step, for example, the sealing resin 53 is formed by a transfer molding technique performed using a mold. As the constituent material of the sealing resin 53, for example, an epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. If the curing of the sealing resin 53 does not proceed sufficiently in this step (sealing step), a post-curing step for completely curing the sealing resin 53 is performed after this step. Even if the adhesive layer 21 is not completely heat-cured in the sealing step, the adhesive layer 21 can be completely heat-cured together with the sealing resin 53 in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C., and the heating time is, for example, 0.5 to 8 hours.

As described above, the semiconductor device can be manufactured.

In the present embodiment, as described above, after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51, the wire bonding step is performed without the adhesive layer 21 being completely thermoset. Instead of such a configuration, the semiconductor chip 31 with the adhesive layer may be temporarily fixed to the adherend 51, and then the adhesive layer 21 may be thermally cured before the wire bonding step may be performed.

In the semiconductor device manufacturing method, after the above-mentioned process is performed with reference to FIG. 2 (c), the wafer thinning step shown in FIG. 8 is replaced with the above-mentioned wafer thinning step with reference to FIG. 2 (d). The process may be performed. In the wafer thinning step shown in FIG. 8, in a state where the semiconductor wafer W is held by the wafer processing tape T2, the wafer is thinned by grinding from the second surface Wb until the wafer reaches a predetermined thickness. A semiconductor wafer divider 30B including a plurality of semiconductor chips 31 and held on the wafer processing tape T2 is formed. In this step, a method of grinding the wafer until the dividing groove 30a itself is exposed on the second surface Wb side (first method) may be adopted, or from the second surface Wb side to the dividing groove 30a. A method of grinding the wafer to the front and then forming a semiconductor wafer split body 30B by causing a crack between the split groove 30a and the second surface Wb by the action of a pressing force from the rotary grindstone to the wafer (second). Method) may be adopted. Depending on the method adopted, the depth of the split groove 30a formed as described above with reference to FIGS. 2 (a) and 2 (b) from the first surface Wa is appropriately determined. .. In FIG. 8, the dividing groove 30a that has undergone the first method, the dividing groove 30a that has undergone the second method, and the cracks connected thereto are schematically represented by thick lines. In the present embodiment, the semiconductor wafer divider 30B thus produced is bonded to the dicing die bond film X in place of the above-mentioned semiconductor wafer 30A, and is described above with reference to FIGS. 3 to 7. Each step may be performed.

9 (a) and 9 (b) show a first expanding step (cool expanding step) performed after the semiconductor wafer divided body 30B is bonded to the dicing die bond film X. In this step, the hollow columnar push-up member 43 provided in the expanding device is raised in contact with the dicing tape 10 at the lower side in the drawing of the dicing die bond film X, and the dicing die bond film X to which the semiconductor wafer divider 30B is bonded is attached. The dicing tape 10 of the above is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B. This expansion is performed on the dicing tape 10 under the condition that a tensile stress is generated in the range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa. The temperature condition in this step is preferably 0 ° C. or lower, more preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and even more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is preferably 1 to 500 mm / sec. The amount of expansion in this step is preferably 50 to 200 mm. By such a cool expanding step, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain a semiconductor chip 31 with an adhesive layer. Specifically, in this step, in the adhesive layer 20 in close contact with the adhesive layer 12 of the expanded dicing tape 10, deformation occurs in each region in which each semiconductor chip 31 of the semiconductor wafer divider 30B is in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the portion facing the dividing groove 30a between the semiconductor chips 31 without such a deformation suppressing action. As a result, the portion of the adhesive layer 20 facing the dividing groove 30a between the semiconductor chips 31 is cut.

In the semiconductor device manufacturing method of the present embodiment, instead of the above-mentioned configuration in which the semiconductor wafer 30A or the semiconductor wafer divider 30B is bonded to the dicing die bond film X, the dicing die bond film X is as follows. The semiconductor wafer 30C produced in the above may be bonded.

As shown in FIGS. 10 (a) and 10 (b), first, the modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. In this step, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held inside the wafer while being held by the wafer processing tape T3. Laser light with the same light spot is applied to the semiconductor wafer W from the side opposite to the wafer processing tape T3 along the planned division line, and into the semiconductor wafer W due to ablation due to multiphoton absorption. The modified region 30b is formed. The modified region 30b is a fragile region for separating the semiconductor wafer W into semiconductor chip units. A method of forming a modified region 30b on a planned division line by irradiating a semiconductor wafer with a laser beam is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. In the method, the laser light irradiation conditions in the present embodiment are appropriately adjusted within the range of, for example, the following conditions.
<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser Wavelength 1064 nm
Laser light spot cross-sectional area 3.14 × 10 ^-8 cm ²
Oscillation form Q-switched pulse repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00
Polarization characteristics Linear polarization (B) Condensing lens Magnification 100x or less NA 0.55
Transmittance with respect to laser light wavelength 100% or less (C) Movement speed of the mounting table on which the semiconductor substrate is placed 280 mm / sec or less

Next, with the semiconductor wafer W held by the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness, and is shown in FIG. 10 (c). As shown, a semiconductor wafer 30C that can be fragmented is formed on a plurality of semiconductor chips 31 (wafer thinning step). In the present embodiment, the semiconductor wafer 30C produced as described above is bonded to the dicing die bond film X in place of the semiconductor wafer 30A, and then each step described above with reference to FIGS. 3 to 7 is performed. It may be done.

11 (a) and 11 (b) show a first expanding step (cool expanding step) performed after the semiconductor wafer 30C is bonded to the dicing die bond film X. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised in contact with the dicing tape 10 at the lower side in the drawing of the dicing die bond film X, and the dicing of the dicing die bond film X bonded to the semiconductor wafer 30C is diced. The tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expansion is performed on the dicing tape 10 under the condition that a tensile stress is generated in the range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa. The temperature condition in this step is preferably 0 ° C. or lower, more preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and even more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is preferably 1 to 500 mm / sec. The amount of expansion in this step is preferably 50 to 200 mm. By such a cool expanding step, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain a semiconductor chip 31 with an adhesive layer. Specifically, in this step, cracks are formed in the fragile modified region 30b of the semiconductor wafer 30C, and individualization into the semiconductor chip 31 occurs. At the same time, in this step, in the adhesive layer 20 in close contact with the adhesive layer 12 of the expanded dicing tape 10, deformation is suppressed in each region of the semiconductor wafer 30C in which each semiconductor chip 31 is in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the portion of the wafer facing the crack forming portion without such a deformation suppressing action. As a result, the portion of the adhesive layer 20 facing the crack-forming portion between the semiconductor chips 31 is cut off.

[Example 1]
<Making dicing tape>
In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirrer, 100 parts by mass of 2-ethylhexyl acrylate (2EHA), 19 parts by mass of 2-hydroxyethyl acrylate (HEA), and A mixture containing 0.4 parts by mass of benzoyl peroxide as a polymerization initiator and 80 parts by mass of toluene as a polymerization solvent was stirred at 60 ° C. for 10 hours in a nitrogen atmosphere (polymerization reaction). As a result, a polymer solution containing the acrylic polymer P ₁ was obtained. Next, a mixture containing the polymer solution containing the acrylic polymer P ₁ , 2-methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurylate as an addition reaction catalyst was mixed at 50 ° C. for 60 hours under an air atmosphere. Stirred in (addition reaction). In the reaction solution, the amount of MOI blended is 1.2 parts by mass with respect to 100 parts by mass of the acrylic polymer P ₁ . Further, in the reaction solution, the blending amount of dibutyl tin dilaurylate is 0.1 part by mass with respect to 100 parts by mass of the acrylic polymer P ₁ . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in the side chain was obtained. Next, in the polymer solution, 1.3 parts by mass of the polyisocyanate compound (trade name "Coronate L", manufactured by Toso Co., Ltd.) and 3 parts by mass of photopolymerization were started with respect to 100 parts by mass of the acrylic polymer P ₂ . Add and mix the agent (trade name "Irgacure 184", manufactured by BASF), and add toluene to the mixture so that the viscosity of the mixture at room temperature becomes 500 mPa · s, dilute the mixture, and dilute the adhesive solution. Got Next, an adhesive solution is applied on the silicone release-treated surface of the PET separator having the surface subjected to the silicone release treatment using an applicator to form a coating film, and the coating film is formed at 120 ° C. 2 After heating and drying for 1 minute, a pressure-sensitive adhesive layer having a thickness of 10 μm was formed on the PET separator. Next, using a laminator, a base material (thickness 115 μm) made of ethylene-vinyl acetate copolymer (EVA) was attached to the exposed surface of this pressure-sensitive adhesive layer at room temperature. The dicing tape was produced as described above.

<Formation of adhesive layer>
Acrylic resin A ₁ (trade name "Teisan Resin SG-80H", weight average molecular weight is 350,000, glass transition temperature Tg is 11 ° C, manufactured by Nagase ChemteX Corporation) 100 parts by mass and phenol resin (trade name "MEHC-7851SS") , Solid at 23 ° C., manufactured by Meiwa Kasei Co., Ltd.) and 69 parts by mass of a silica filler (trade name "SO-25R", manufactured by Admatex Co., Ltd.) are added to a predetermined amount of methyl ethyl ketone and mixed. , An adhesive composition C ₁ having a total solid content concentration of 20% by mass was prepared. Next, the adhesive composition C ₁ was applied to the silicone release-treated surface of the PET separator having the silicone release-treated surface using an applicator to form a coating film, and the coating film was formed. The adhesive layer as a die bond film having a thickness of 10 μm was formed on the PET separator by heating and drying at ° C. for 2 minutes.

<Preparation of dicing die bond film>
After peeling the PET separator from the dicing tape described above, the pressure-sensitive adhesive layer exposed on the dicing tape and the adhesive layer described above with the PET separator were bonded together at room temperature using a laminator while aligning the adhesive layer. As described above, the dicing die bond film of Example 1 having a laminated structure including the dicing tape and the adhesive layer as the die bond film was produced.

[Example 2]
In the same manner as the dicing die bond film of Example 1, the dicing die bond film of Example 2 was used in the same manner as in Example 2 except that the adhesive composition C ₂ was used instead of the above-mentioned adhesive composition C ₁ in forming the adhesive layer (thickness 10 μm). A dicing die bond film was produced. The adhesive composition C ₂ contains 100 parts by mass of acrylic resin A ₁ (trade name "Taisan Resin SG-80H", manufactured by Nagase ChemteX Corporation) and an epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation). 53 parts by mass of phenol resin (trade name "MEHC-7851SS", manufactured by Meiwa Kasei Co., Ltd.) and 193 parts by mass of silica filler (trade name "SO-25R", manufactured by Admatex Co., Ltd.). It was prepared by adding it to a predetermined amount of methyl ethyl ketone and mixing it to a total solid content concentration of 20% by mass.

[Comparative Example 1]
Comparative Example 1 was formed in the same manner as the dicing die bond film of Example 1 except that the adhesive composition C ₃ was used instead of the adhesive composition C ₁ described above in forming the adhesive layer (thickness 10 μm). A dicing die bond film was produced. The adhesive composition C ₃ contains 100 parts by mass of acrylic resin A ₂ (trade name "Taisan Resin SG-P3", weight average molecular weight 850000, glass transition temperature Tg 12 ° C., manufactured by Nagase ChemteX Corporation) and epoxy. 58 parts by mass of resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation), 55 parts by mass of phenol resin (trade name "MEHC-7851SS", manufactured by Meiwa Kasei Co., Ltd.), and silica filler (trade name "SO-25R"). , (Manufactured by Admatex Co., Ltd.) 69 parts by mass was added to a predetermined amount of methyl ethyl ketone and mixed to prepare a total solid content concentration of 20% by mass.

[Comparative Example 2]
Comparative Example 2 was formed in the same manner as the dicing die bond film of Example 1 except that the adhesive composition C ₄ was used instead of the adhesive composition C ₁ described above in forming the adhesive layer (thickness 10 μm). A dicing die bond film was produced. The adhesive composition C ₄ contains 100 parts by mass of acrylic resin A ₂ (trade name "Taisan Resin SG-P3", manufactured by Nagase ChemteX Corporation) and an epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation). 73 parts by mass of phenol resin (trade name "MEHC-7851SS", manufactured by Meiwa Kasei Co., Ltd.) and 69 parts by mass of silica filler (trade name "SO-25R", manufactured by Admatex Co., Ltd.). It was prepared by adding it to a predetermined amount of methyl ethyl ketone and mixing it to a total solid content concentration of 20% by mass.

[180 ° peeling adhesive strength of adhesive layer]
The 180 ° peeling adhesive strength was examined for the adhesive layer in each of the dicing die bond films of Examples 1 and 2 and Comparative Examples 1 and 2. First, the adhesive layer is peeled off from the dicing tape, and a backing tape (trade name "BT-315", manufactured by Nitto Denko KK) is attached to the surface of the adhesive layer on the side attached to the dicing tape. A sample piece (width 10 mm × length 60 mm) was cut out from the backing adhesive layer. Next, after confirming that the surface temperature of the silicon wafer placed on the hot plate having a set temperature of 60 ° C. is 60 ° C., the surface of the silicon wafer (Si plane) and the exposure of the adhesive layer on the sample piece are exposed. The surface was pasted together. This bonding was performed by a crimping operation in which a 2 kg hand roller was reciprocated once. Then, using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), the sample piece is peeled from the silicon wafer under the conditions of 100 ° C, peeling angle 180 ° and peeling speed 300 mm / min. The peeling test was carried out, and the 180 ° peeling adhesive force (N / 10 mm) of the adhesive layer on the silicon wafer at 100 ° C. was measured (measurement of the first adhesive force). Further, with respect to the adhesive layer in each of the dying die bond films of Examples 1 and 2 and Comparative Examples 1 and 2, 180 ° peeling adhesive strength measurement at 100 ° C was performed except that the measurement temperature was changed to 23 ° C instead of 100 ° C. Similarly, the 180 ° peeling adhesive force (N / 10 mm) of the adhesive layer on the silicon wafer was measured (measurement of the second adhesive force). The adhesive layer in each of the dying die bond films of Examples 1 and 2 and Comparative Examples 1 and 2 is the same as the 180 ° peeling adhesive strength measurement at 100 ° C. except that the measurement temperature is -15 ° C instead of 100 ° C. Then, the 180 ° peeling adhesive force (N / 10 mm) of the adhesive layer on the silicon wafer was measured (measurement of the third adhesive force). The measurement results are listed in Table 1.

[Measurement of dynamic viscoelasticity of adhesive layer]
Dynamic viscoelasticity measurement of the adhesive layer of each dicing die bond film of Examples 1 and 2 and Comparative Examples 1 and 2 using a dynamic viscoelasticity measuring device (trade name "RSAIII", manufactured by TA Instruments). Based on the above, the loss elastic modulus at 100 ° C. and the value of the peak value of the loss tangent at 25 to 50 ° C. were investigated. The sample piece to be used for dynamic viscoelasticity measurement is prepared by forming a laminated body in which each adhesive layer is laminated to a thickness of 200 μm and then cutting out from the laminated body in a size of 10 mm in width × 40 mm in length. be. In this measurement, the initial chuck distance between the sample piece holding chucks is 22.5 mm, the measurement mode is the tensile mode, the measurement temperature range is -40 ° C to 285 ° C, the frequency is 1 Hz, and the dynamic strain. The temperature was 0.005% and the temperature rising rate was 10 ° C./min. Table 1 shows the obtained elastic modulus (MPa) at 100 ° C. and the peak value of the loss tangent at 25 to 50 ° C. (The adhesive layer in Comparative Example 1 has a loss in the range of 25 to 50 ° C. No tangent peak appeared).

[Weight reduction rate of adhesive layer]
The weight loss rate of each dicing die bond film of Examples 1 and 2 and Comparative Examples 1 and 2 at 100 ° C. was examined. A sample of about 10 mg was cut out from the adhesive layer, and this sample was used in the process of raising the temperature using a differential thermal-thermogravimetric simultaneous measuring device (trade name "differential thermal balance TG-DTA TG8120", manufactured by Rigaku Co., Ltd.). Weight loss was measured. In this measurement, the temperature was raised from the reference weight temperature of 23 ° C. to 300 ° C. at a heating rate of 10 ° C./min under a nitrogen atmosphere. Table 1 shows the reduction rate (%) of the sample from the weight at 23 ° C. (reference weight) to the weight at 100 ° C.

[Evaluation of peeling suppression]
Using the dicing die bond films of Examples 1 and 2 and Comparative Examples 1 and 2, the following bonding step, first expanding step for cutting (cool expanding step), and second expanding for separation are performed. A step (normal temperature expanding step) and a dicing step were performed.

In the bonding process, the semiconductor wafer held on the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) is bonded to the adhesive layer of the dicing die bond film, and then the semiconductor wafer is bonded to the wafer. The processing tape was peeled off. The semiconductor wafer has undergone half-cut dicing and thinning, has a dividing groove for individualization (width 25 μm, forming a grid of 10 mm × 10 mm in one section), and has a thickness of 50 μm. In the bonding, a laminator was used, the bonding speed was 10 mm / sec, the temperature condition was 60 ° C., and the pressure condition was 0.15 MPa. Further, in this step, the surface of the semiconductor wafer opposite to the split groove forming surface was bonded to the adhesive layer of the dicing die bond film.

The cool expand step was carried out in the cool expand unit using a die separate device (trade name "Die Separator DDS2300", manufactured by DISCO Corporation). Specifically, after attaching a ring frame to the above-mentioned dicing die bond film or its pressure-sensitive adhesive layer accompanied by a semiconductor wafer, the dicing die bond film is set in the apparatus, and the semiconductor is used in the cool expand unit of the apparatus. The dicing tape of the dicing die bond film with the wafer was expanded. In this cool expanding step, the temperature is −15 ° C., the expanding speed is 200 mm / sec, and the expanding amount is 12 mm. By this step, the semiconductor wafer was individualized on the dicing tape, and a semiconductor chip with a plurality of adhesive layers was obtained.

When the semiconductor chips do not float from the adhesive layer on the dicing tape at the time of passing through such a cool expanding step, it is evaluated that the suppression of peeling in the cool expanding step is good. When the semiconductor chip was lifted from the adhesive layer on the dicing tape in one or more semiconductor chips, it was evaluated that the peeling suppression in the cool expand step was poor.

The room temperature expanding step was performed in the room temperature expanding unit using a die separate device (trade name "Die Separator DDS2300", manufactured by DISCO Corporation). Specifically, the dicing tape of the dicing die bond film with the semiconductor wafer that has undergone the above-mentioned cool expand step was expanded by the room temperature expanding unit of the same apparatus. In this normal temperature expanding step, the temperature is 23 ° C., the expanding speed is 1 mm / sec, and the expanding amount is 10 mm. After that, the dicing die bond film that had undergone normal temperature expansion was heat-shrinked. The treatment temperature is 220 ° C. and the treatment time is 20 seconds.

In the die bonding step, seven stages of die bonding of the semiconductor chip with an adhesive layer obtained through the above-mentioned expanding step were performed. Specifically, first, a semiconductor chip with an adhesive layer obtained through the above-mentioned expanding step was picked up from a dicing tape and then die-bonded to a lead frame via the adhesive layer. Next, another semiconductor chip with an adhesive layer obtained through the above-mentioned expanding step was picked up from the dicing tape and then die-bonded to the semiconductor chip on the lead frame via the adhesive layer. At that time, die bonding was performed in an arrangement in which the upper semiconductor chip was displaced from the position directly above the four sides of the next semiconductor chip (upper semiconductor chip in the plan view square) located directly above the four sides of the lower semiconductor chip in the plan view square. .. The misalignment direction from the position directly above is the separation direction of the pair of parallel sides in the upper semiconductor chip, and the misalignment length is 200 μm. Then, the die bonding of another semiconductor chip with an adhesive layer obtained through the above-mentioned expanding step to the semiconductor chip that had already undergone die bonding on the lead frame was repeated 5 times via the adhesive layer. .. Each die bonding in this step is accompanied by the above-mentioned positional deviation (positional deviation length of 200 μm) of the upper semiconductor chip with respect to the lower semiconductor chip in the same direction. Further, each die bonding in this step was performed under the conditions of 100 ° C., a pressing force of 0.2 MPa, and a pressurizing time of 2 seconds.

When the semiconductor chips are not lifted from the adhesive layer at the time of the 7th stage die bonding in all the semiconductor chips, it is evaluated that the peeling suppression in the die bonding (DB) step is good, and the adhesive is used. When the semiconductor chip was lifted from the layer in one or more semiconductor chips, it was evaluated that the peeling suppression in the DB process was poor. Further, when the semiconductor chips are not lifted from the adhesive layer in all the semiconductor chips when left at room temperature for 1 hour after the die bonding step, it is good to suppress the peeling at room temperature after the DB step. When the semiconductor chip was lifted from the adhesive layer in one or more semiconductor chips, it was evaluated that the suppression of peeling at room temperature after the DB step was poor. These results are listed in Table 1.

[evaluation]
Each of the dicing die bond films of Examples 1 and 2 has a 180 ° peeling adhesive force against a Si plane at 100 ° C. in the range of 0.5 to 5 N / 10 mm and a 180 ° peeling adhesive force against a Si plane at 23 ° C. Provides an adhesive layer in the range of 3 to 15 N / 10 mm. In the semiconductor chip with an adhesive layer obtained through the expanding step performed by using such a dicing die bond film, the semiconductor chip does not float from the adhesive layer in the die bonding step, and after the die bonding step. Even when the temperature was lowered to room temperature, the semiconductor chip did not float from the adhesive layer. On the other hand, in the semiconductor chip with an adhesive layer obtained through the expanding step performed using each dicing die bond film of Comparative Examples 1 and 2, the adhesive layer is removed from the dicing step and the subsequent room temperature drop state. There was something that caused the floating of the semiconductor chip.

Further, each dicing die bond film of Examples 1 and 2 includes an adhesive layer having an adhesive force for peeling 180 ° against a Si plane at −15 ° C. of 5 N / 10 mm or more. In the cool expanding step performed using such a dicing die bond film, the semiconductor chip did not float from the adhesive layer. On the other hand, in the cool expanding step performed using each dicing die bond film of Comparative Examples 1 and 2, a semiconductor chip having a lift from the adhesive layer was observed.

X Dicing die bond film 10 Dicing tape 11 Base material 20, 21 Adhesive layer W, 30A, 30C Semiconductor wafer 30B Semiconductor wafer divider 30a Split groove 30b Modification region 31 Semiconductor chip

Claims (9)

A dicing tape having a laminated structure including a base material and an adhesive layer,
The dicing tape is provided with an adhesive layer that is removably adhered to the adhesive layer.
The adhesive layer exhibited a 180 ° peeling adhesive force of 0.5 to 5N / 10 mm in the first peeling test under the conditions of 100 ° C., a peeling angle of 180 ° and a peeling speed of 30 mm / min with respect to a silicon flat surface.
The adhesive layer exhibits 180 ° peeling adhesive strength of 3 to 15 N / 10 mm in the second peeling test under the conditions of 23 ° C., a peeling angle of 180 ° and a peeling speed of 30 mm / min with respect to a silicon flat surface.
The adhesive layer was measured for an adhesive layer sample piece having a width of 10 mm and a thickness of 200 μm under the conditions of an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10 ° C./min. A dicing die-bonded film having a maximum value of 0.8 or more in the range of 25 to 50 ° C. for the loss tangent . The adhesive layer was measured for an adhesive layer sample piece having a width of 10 mm and a thickness of 200 μm under the conditions of an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10 ° C./min. The dicing die bond film according to claim 1, wherein the loss elastic modulus at 100 ° C. is 0.1 to 0.5 MPa. Claim 1 shows that the adhesive layer exhibits a 180 ° peeling adhesive strength of 5N / 10 mm or more in a third peeling test under the conditions of −15 ° C., a peeling angle of 180 °, and a peeling speed of 30 mm / min with respect to a silicon flat surface. Or the dicing die bond film according to 2 . The adhesive layer has a weight loss rate of 0.8% or less at 100 ° C. in a weight loss measurement under the conditions of a nitrogen atmosphere, a reference weight temperature of 23 ° C. ± 2 ° C., and a heating rate of 10 ° C./min. The dicing die bond film according to any one of claims 1 to 3 . The dicing die bond film according to any one of claims 1 to 4 , wherein the adhesive layer contains a resin and a filler, and the resin contains a total of 50 to 95% by mass of an acrylic resin and a thermosetting resin. The dicing die bond film according to claim 5 , wherein the adhesive layer has a filler content of 35 to 60% by mass. The dicing die bond film according to claim 5 or 6 , wherein the acrylic resin has a weight average molecular weight of 500,000 or less. A semiconductor wafer that can be fragmented into a plurality of semiconductor chips or a semiconductor wafer divided body containing the plurality of semiconductor chips on the side of the adhesive layer in the dicing die bond film according to any one of claims 1 to 7 . The first step of bonding and
The second step of cutting the adhesive layer by expanding the dicing die bond film to obtain a semiconductor chip with an adhesive layer, and
A method for manufacturing a semiconductor device, comprising a third step of die-bonding the semiconductor chip with an adhesive layer onto a substrate or another semiconductor chip. The semiconductor device manufacturing method according to claim 8 , wherein the temperature condition in the second step is 0 ° C. or lower.

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