CN110527444A - Cut die bonding film and manufacturing method for semiconductor device - Google Patents

Cut die bonding film and manufacturing method for semiconductor device Download PDF

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Publication number
CN110527444A
CN110527444A CN201910439435.9A CN201910439435A CN110527444A CN 110527444 A CN110527444 A CN 110527444A CN 201910439435 A CN201910439435 A CN 201910439435A CN 110527444 A CN110527444 A CN 110527444A
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China
Prior art keywords
adhesive layer
bonding film
die bonding
adhesive
cutting die
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CN201910439435.9A
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Chinese (zh)
Inventor
大西谦司
宍户雄一郎
木村雄大
杉村敏正
福井章洋
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Nitto Denko Corp
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Nitto Denko Corp
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Publication of CN110527444A publication Critical patent/CN110527444A/en
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
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    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/062—Copolymers with monomers not covered by C09J133/06
    • C09J133/066—Copolymers with monomers not covered by C09J133/06 containing -OH groups
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    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/241—Polyolefin, e.g.rubber
    • C09J7/243—Ethylene or propylene polymers
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    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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    • C09J2423/00—Presence of polyolefin
    • C09J2423/04—Presence of homo or copolymers of ethene
    • C09J2423/046—Presence of homo or copolymers of ethene in the substrate
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    • C09J2467/005—Presence of polyester in the release coating
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    • H01L2924/35121—Peeling or delaminating

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  • Engineering & Computer Science (AREA)
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  • Computer Hardware Design (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
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  • Die Bonding (AREA)

Abstract

The present invention provides cutting die bonding film and manufacturing method for semiconductor device, and cutting die bonding film (DDAF) has the adhesive layer as die bonding film of the tilting of chip suitable for inhibition chip bonding process, later.DDAF of the invention has cutting belt (10) and adhesive layer (20).Adhesive layer (20) and the adhesive phase (12) of cutting belt (10) are closely sealed.Adhesive layer (20) shows 180 ° of peel adhesions of 0.5~5N/10mm in the 1st disbonded test (100 DEG C, 180 ° of peel angle, peeling rate 30mm/ minutes) relative to Si plane.At the same time, adhesive layer (20) shows 180 ° of peel adhesions of 3~15N/10mm in the 2nd disbonded test (23 DEG C, 180 ° of peel angle, peeling rate 30mm/ minutes) relative to Si plane.

Description

Cut die bonding film and manufacturing method for semiconductor device
Technical field
The present invention relates to can cut die bonding film used in the manufacturing process of semiconductor device and partly lead Body device manufacturing method.
Background technique
It is comparable Nian Jie thin with chip engagement chip with size in order to obtain in the manufacturing process of semiconductor device The semiconductor chip of the semiconductor chip of film, i.e. microarray strip bonding film, sometimes using cutting die bonding film.Cut chip Bonding film has size corresponding with the semiconductor crystal wafer as processing object, such as with being made of substrate and adhesive phase Cutting belt and in its adhesive phase side strippingly closely sealed die bonding film (adhesive layer).
One of the method for semiconductor chip of microarray strip bonding film is obtained as cutting die bonding film is used, Know have after for will cut die bonding film and/or its cutting belt extend and cut off die bonding film process side Method.In the method, firstly, being fitted in semiconductor crystal wafer on the die bonding film of cutting die bonding film.This is partly led Body wafer together with die bonding film in a manner of for example being cut off later and be melted into multiple semiconductor chips so as to monolithic It is processed.Then, make to be generated by the die bonding film in cutting belt in order to cut off the die bonding film and divide Be not sealed at multiple die bonding film small pieces of semiconductor chip, using expanding unit make cut die bonding film and/or The extension of its cutting belt.In the extension process, with cutting off at the comparable position in position in die bonding film, chip engagement Semiconductor die fenestra on film is cut off, and on cutting die bonding film and/or cutting belt, semiconductor crystal wafer is by monolithic Turn to multiple semiconductor chips.Then, after for example after cleaning process, each semiconductor chip is the same as the chip closely sealed with them Together, the downside for being picked the thimble component Self cleavage band of mechanism jacks up the comparable die bonding film of size, on this basis It is picked on Self cleavage band.In this way, the semiconductor chip with die bonding film can be obtained.The half of the microarray strip bonding film Conductor chip clips the die bonding film and is fixed in the adherends such as installation base plate (chip engagement work by chip engagement Sequence).For example, for the relevant technologies of the cutting die bonding film used in the above-described manner, for example, following patent documents 1~ Have in 3 recorded.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2007-2173 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2010-177401 bulletin
Patent document 3: Japanese Unexamined Patent Publication 2012-23161 bulletin
Summary of the invention
Problems to be solved by the invention
Semiconductor chip has the tendency that more thinner easier warpage.This is because semiconductor chip is by deliberately making thermal expansion system The multiple material that number has differences is constituted, and is undergone various thermal process and made.For example, partly being led in chip bonding process Body chip is thinner, and the variation of size caused by the thermal expansion for the semiconductor chip in the high-temperature heating process of chip engagement is got over It is easy to cause the bending deformation of the chip through-thickness.Therefore, it more promotes and is fitted in partly leading on cutting die bonding film The thin semiconductor chip of the slimming of body wafer, the microarray strip bonding film according to obtained from the above method is easier in chip Warpage occurs in bonding process.
In addition, more promoting the slimming for the semiconductor crystal wafer being fitted on cutting die bonding film, then according to above-mentioned side Even if the thin semiconductor chip of microarray strip bonding film obtained from method is in the chip bonding process by warpage does not occur In the case of, also more it is easy after the process, for example cool to room temperature until state in warpage occurs.Think semiconductor chip It is thinner, the easier initiation core of change in size caused by the contraction of the semiconductor chip in temperature-fall period after chip bonding process The bending deformation of the through-thickness of piece.
The present invention finds out based on the above circumstances, and its purpose is to provide a kind of cutting die bonding film, tools The standby adhesive layer as die bonding film, the adhesive layer are suitable for inhibiting semiconductor chip in chip bonding process It tilts, and is suitable for inhibiting after chip bonding process the tilting of semiconductor chip.Another object of the present invention is to provide make With the manufacturing method of the semiconductor device of above-mentioned such cutting die bonding film.
The solution to the problem
1st scheme according to the present invention provides a kind of cutting die bonding film.The cutting die bonding film, which has, to be cut Cut band and the adhesive layer as die bonding film.Cutting belt has the stepped construction comprising substrate and adhesive phase.Bonding Oxidant layer and the adhesive phase in cutting belt are strippingly closely sealed.Adhesive layer relative to silicon plane with 100 DEG C, peel angle 0.5~5N/10mm is shown in the disbonded test (the 1st disbonded test) that 180 ° and peeling rate 30mm/ minutes of condition carries out 180 ° of peel adhesions.The bonding force is preferably 0.6~3N/10mm, more preferably 0.7~2N/10mm.At the same time, it glues Oxidant layer is connect relative to silicon plane, the stripping to carry out under conditions of 23 DEG C, 180 ° of peel angle and peeling rate 30mm/ minutes 180 ° of peel adhesions of 3~15N/10mm are shown in separating test (the 2nd disbonded test).The bonding force is preferably 3.2~ 12N/10mm, more preferably 3.4~10N/10mm.These bonding forces are tried by the removing carried out to adhesive layer before curing Test is fixed.The cutting die bonding film of above-mentioned such structure can be in the manufacturing process of semiconductor device for undergoing Above-mentioned extension process and obtain the semiconductor chip of microarray strip bonding film (adhesive layer).
About the adhesive layer of the die bonding film as this cutting die bonding film, as described above, in the 1st removing The 180 ° of peel adhesions shown in test (100 DEG C, 180 ° of peel angle, peeling rate 30mm/ minutes) relative to silicon plane (the 1st bonding force) is 0.5~5N/10mm, preferably 0.6~3N/10mm, more preferably 0.7~2N/10mm.It is above-mentioned such It constitutes and is suitable for for example for the chip for undergoing the semiconductor chip with adhesive layer obtained from above-mentioned such extension process Ensure the engagement state between the adhesive layer and semiconductor chip under hot conditions in bonding process, inhibits the semiconductor chip Tilting.For example, shown in Examples and Comparative Examples as be described hereinafter.
The adhesive layer of die bonding film as this cutting die bonding film, as described above, in the 2nd disbonded test (the 2nd is viscous for the 180 ° of peel adhesions shown in (23 DEG C, 180 ° of peel angle, peeling rate 30mm/ minutes) relative to silicon plane It with joint efforts) is 3~15N/10mm, preferably 3.2~12N/10mm, more preferably 3.4~10N/10mm.Such constitute is suitable for The cooling after ensuring cutting action between the adhesive layer of engagement state and semiconductor chip is maintained in chip bonding process Journey, engagement state under room temperature, suitable for inhibiting the tilting of the semiconductor chip.For example, embodiment as be described hereinafter and comparing Shown in example.
As previously discussed, this cutting die bonding film engages work in the chip for the semiconductor chip with adhesive layer It is suitable for inhibiting the tilting of semiconductor chip in sequence, and is suitable for inhibiting after chip bonding process the tilting of semiconductor chip.
The adhesive layer of this cutting die bonding film for width 10mm and 200 μm of thickness of adhesive layer coupons with Initial chuck spacing 22.5mm, frequency 1Hz, dynamic strain 0.005% and the measurement of 10 DEG C/min of heating rate of condition, 100 Loss modulus at DEG C is preferably 0.1~0.5MPa, more preferably 0.12~0.45MPa.Such composition is adhesive layer In ensure 100 DEG C and the wetability near it, realize the 1st above-mentioned bonding force in terms of be suitable.Loss modulus can be with base It is found out in the measurement of the dynamic viscoelastic carried out using measurement of dynamic viscoelasticity device.
The adhesive layer of this cutting die bonding film is for width 10mm and thick 200 μm of adhesive layer coupons are with first Beginning chuck spacing 22.5mm, frequency 1Hz, dynamic strain 0.005% and the measurement of 10 DEG C/min of heating rate of condition, loss Maximum value of angle tangent in the range of 25~50 DEG C is 0.8 or more.It is to ensure in adhesive layer 25 in such composition~ 50 DEG C and the wetability near it in terms of realizing the 2nd above-mentioned bonding force are suitable.Loss angle tangent can be based on use The measurement for the dynamic viscoelastic that measurement of dynamic viscoelasticity device carries out is found out.
The adhesive layer of this cutting die bonding film relative to silicon plane with -15 DEG C, 180 ° of peel angle and stripping 180 ° of removings of 5N/10mm or more are shown in the disbonded test (the 3rd disbonded test) that condition of 30mm/ minutes from speed carries out Bonding force.The bonding force is preferably 5.5N/10mm or more, more preferably 6N/10mm or more.For example with -10 DEG C it is below low It is such to be formed in the case that temperature implements the above-mentioned extension process cut off with the adhesive layer as die bonding film It is suitable for inhibiting peeling-off aspect between adhesive layer and semiconductor chip in the process.
The adhesive layer of this cutting die bonding film is in nitrogen atmosphere, 23 DEG C ± 2 DEG C of standard weights temperature and heating speed In weightless measurement under conditions of 10 DEG C/min of degree, the weight-loss ratio at 100 DEG C be 0.8% hereinafter, preferably 0.6% hereinafter, More preferably 0.5% or less.Caused by the pollution for inhibiting semiconductor chip caused by the exhaust gas composition from adhesive layer From the perspective of the closing force of adhesive layer reduces, above-mentioned such constitute is preferred.The weight-loss ratio of adhesive layer for example may be used It is measured with using differential thermal-thermogravimetric simultaneous measuring apparatus.
Preferably, the adhesive layer of this cutting die bonding film include resin and filler, the resin include 50~ The acrylic resin and heat-curing resin of 95 mass %.Bonding from technique at a high temperature of such as 100 DEG C or so From the perspective of oxidant layer is to the wetability of semiconductor chip and the balance of retentivity, above-mentioned such constitute is preferred.Propylene The weight average molecular weight of acid resin is preferably 500000 hereinafter, more preferably 480000 hereinafter, more preferably 450000 or less.From Sight of the adhesive layer to the wetability of semiconductor chip and the balance of retentivity in technique at a high temperature of such as 100 DEG C or so Point sets out, and above-mentioned such constitute is preferred.On the other hand, the filler containing ratio of adhesive layer is preferably 35~60 matter Measure %, more preferably 40~55 mass %, more preferably 42~52 mass %.Such structure, which is to realize in adhesive layer, to expand It is suitable in terms of opening up the balance of the cutting off property and cohesive force in process.
According to the 2nd scheme of invention, manufacturing method for semiconductor device is provided.The manufacturing method for semiconductor device includes at least Following the 1st process, the 2nd process and the 3rd process.In 1st process, connect in the above-mentioned cutting chip of the 1st scheme of the invention Close the adhesive layer side fitting in film can monolithic turn to the semiconductor crystal wafer of multiple semiconductor chips or comprising multiple half The semiconductor crystal wafer dividing body of conductor chip.In 2nd process, by being extended to cutting die bonding film, thus cut off Adhesive layer obtains the semiconductor chip with adhesive layer.Temperature condition in 2nd process is preferably 0 DEG C or less.3rd process In (chip bonding process), the semiconductor chip chip with adhesive layer is connect in substrate or other semiconductor core on pieces It closes.Manufacturing method for semiconductor device as constructed as above using the above-mentioned cutting die bonding film of the 1st scheme of the invention is suitable In the tilting for inhibiting semiconductor chip in chip bonding process, and inhibit the semiconductor chip being suitable for after chip bonding process It tilts.
Detailed description of the invention
Fig. 1 is the schematic cross-section of the cutting die bonding film of an embodiment of the invention.
Fig. 2 indicates a part of work in the manufacturing method for semiconductor device using cutting die bonding film shown in FIG. 1 Sequence.
Fig. 3 indicates the subsequent handling of process shown in Fig. 2.
Fig. 4 indicates the subsequent handling of process shown in Fig. 3.
Fig. 5 indicates the subsequent handling of process shown in Fig. 4.
Fig. 6 indicates the subsequent handling of process shown in fig. 5.
Fig. 7 indicates the subsequent handling of process shown in fig. 6.
Fig. 8 shows in the variation for the manufacturing method for semiconductor device for using cutting die bonding film shown in FIG. 1 A part of process.
Fig. 9 is indicated in the variation using the manufacturing method for semiconductor device of cutting die bonding film shown in FIG. 1 A part of process.
Figure 10 is indicated in the variation using the manufacturing method for semiconductor device of cutting die bonding film shown in FIG. 1 A part of process.
Figure 11 is indicated in the variation using the manufacturing method for semiconductor device of cutting die bonding film shown in FIG. 1 A part of process.
Description of symbols
X cuts die bonding film
10 cutting belts
11 substrates
20,21 adhesive layers
W, 30A, 30C semiconductor crystal wafer
30B semiconductor crystal wafer dividing body
30a slot segmentation
30b modification area
31 semiconductor chips
Specific embodiment
Fig. 1 is the schematic cross-section of the cutting die bonding film X of an embodiment of the invention.Cut chip engagement Film X has the stepped construction comprising cutting belt 10 with the adhesive layer 20 as die bonding film.Cutting belt 10 has packet Stepped construction containing substrate 11 Yu adhesive phase 12.Adhesive phase 12 has adhesive surface 12a in 20 side of adhesive layer.Adhesive layer 20 use region comprising workpiece fitting, and strippingly closely sealed with the adhesive phase of cutting belt 10 12 and/or its adhesive surface 12a. Cutting die bonding film X can be in the manufacture of semiconductor device for obtaining the semiconductor chip of microarray strip bonding film During, for example aftermentioned such extend process.In addition, cutting die bonding film X has size and semiconductor device Manufacturing process in processing object the corresponding disc-shape of semiconductor crystal wafer, diameter is for instance in 345~380mm's The range of (8 inch wafers correspond to type) in the range of (12 inch wafers correspond to type), 245~280mm in range, 195~230mm In the range of interior (6 inch wafers correspond to type) or 495~530mm (18 inch wafers correspond to type).
The substrate 11 of cutting belt 10 is to play to make as supporting mass in cutting belt 10 and/or cutting die bonding film X Element.Substrate 11, which is, for example, plastic basis material as the plastic basis material, can properly use plastic film.As the plastics The constituent material of substrate, such as can enumerate: polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, poly- carbonic acid Ester, polyether-ether-ketone, polyimides, polyetherimide, polyamide, fully aromatic polyamide, polyphenylene sulfide, aramid fiber, fluororesin, fibre Tie up prime system resin and silicone resin.It as polyolefin, such as can enumerate: low density polyethylene (LDPE), straight-chain low density polyethylene Alkene, medium density polyethylene, high density polyethylene (HDPE), ultra-low density polyethylene, atactic copolymerized polypropene, block copolymerization polypropylene, Poly- polypropylene, polybutene, polymethylpentene, vinyl-vinyl acetate copolymer (EVA), ionomer resin, ethylene-(methyl) Acrylic copolymer, ethylene-(methyl) acrylate copolymer, ethylene-butene copolymer and ethylene-hexene co-polymers.Make It for polyester, such as can enumerate: polyethylene terephthalate (PET), polyethylene naphthalate and poly- to benzene two Formic acid butanediol ester (PBT).Substrate 11 can be formed of one material, and can also be formed by two or more materials.Substrate 11 It can have single layer structure, it is possible to have multilayered structure.In addition, can be non-stretched when substrate 11 is formed by plastic film Film, or monodirectional tension film can also be biaxially oriented film.Adhesive phase 12 on substrate 11 is as described later In the case where ultra-violet solidified, substrate 11 preferably has UV transmissive.
In the use process of cutting die bonding film X, such as cutting belt 10 and/or base are made by local heating In the case that material 11 is shunk, substrate 11 preferably has heat-shrinkable.Ensure the viewpoint of good heat-shrinkable from substrate 11 It sets out, substrate 11 preferably comprises vinyl-vinyl acetate copolymer as principal component.The principal component of substrate 11 refers in substrate structure At the ingredient for occupying biggest quality ratio in ingredient.In addition, when substrate 11 is formed by plastic film, for cutting belt 10 and/or Substrate 11, in terms of realizing isotropic heat-shrinkable, the preferably bidirectional oriented film of substrate 11.Cutting belt 10 and/or The heat in heat treatment test that substrate 11 carries out under conditions of heating temperature is 100 DEG C and heating treatment time is 60 seconds is received Shrinkage is, for example, 2~30%.
The surface of 12 side of adhesive phase in substrate 11 can be implemented for improving itself and the adaptation of adhesive phase 12 Physical treatment, chemical treatment or primary coat processing.As physical treatment, such as can enumerate: sided corona treatment, corona treatment, Frosted working process, ozone exposure processing, fire exposure processing, high-voltage electric shock exposure treatment and the processing of ionizing irradiation line. As chemical treatment, such as chromic acid processing can be enumerated.For improving the processing of adaptation preferably to the bonding in substrate 11 The entire surface of 12 side of oxidant layer is implemented.
From ensure substrate 11 for as cutting belt 10 and/or cut die bonding film X in supporting mass and play work From the perspective of intensity, the thickness of substrate 11 is preferably 40 μm or more, more preferably 50 μm or more, be more preferably 55 μm with Above, more preferably 60 μm or more.In addition, the flexibility of appropriateness is realized from cutting belt 10 and/or cutting die bonding film X Viewpoint is set out, and the thickness of substrate 11 is preferably 200 μm or less, more preferably 180 μm or less, more preferably 150 μm or less.
The adhesive phase 12 of cutting belt 10 contains adhesive.Adhesive can be can be by irradiation with radiation, heating etc. The adhesive (bonding force reduction type adhesive) for intentionally reducing bonding force from external effect, is also possible to bonding force It nearly or completely will not be because of the adhesive (the non-reduced type adhesive of bonding force) that is reduced from external effect.It is viscous about using Resultant force reduction type adhesive still uses the non-reduced type adhesive of bonding force as the adhesive in adhesive phase 12, can be according to making It is thin that the cutting chip engagement such as method, condition of singualtion of semiconductor chip of singualtion is carried out with cutting die bonding film X The usage mode of film X suitably selects.
When using bonding force reduction type adhesive as the adhesive in adhesive phase 12, in cutting die bonding film X Use process in, can be used separately adhesive phase 12 show relatively high bonding force state and show it is relatively low Bonding force state.For example, cut die bonding film X be used for aftermentioned extension process when, in order to inhibit/prevent bonding agent Layer 20 floats from adhesive phase 12, removes and utilize the high adhesion states of adhesive phase 12, on the other hand, thereafter for from In the aftermentioned pickup process for cutting the semiconductor chip of the 10 pick-up tape adhesive layer of cutting belt of die bonding film X, in order to easy In the semiconductor chip from 12 pick-up tape adhesive layer of adhesive phase, the power state low-adhesive of adhesive phase 12 can use.
It as such bonding force reduction type adhesive, such as can enumerate: the adhesive (spoke with radiation curing Ray-curable adhesive), thermal expansion type adhesive etc..In the adhesive phase 12 of present embodiment, it can be used a kind of viscous Two or more bonding force reduction type adhesives also can be used in resultant force reduction type adhesive.Furthermore it is possible to be adhesive phase 12 Whole to be formed by bonding force reduction type adhesive, a part for being also possible to adhesive phase 12 bonds dosage form by bonding force reduction type At.For example, it is whole by bonding force reduction type bonding dosage form to can be adhesive phase 12 when adhesive phase 12 has single layer structure At the predetermined portion being also possible in adhesive phase 12 is formed by bonding force reduction type adhesive, other positions are non-by bonding force Reduction type adhesive is formed.In addition, can be all layers for constituting stepped construction by gluing when adhesive phase 12 has stepped construction Resultant force reduction type adhesive is formed, and a part of layer being also possible in stepped construction is formed by bonding force reduction type adhesive.
As the radiation curing adhesive in adhesive phase 12, can be used for example by electron ray, ultraviolet light, Alpha ray, β ray, gamma-rays or X-ray irradiation and cured type adhesive, can be particularly suitablely using by ultraviolet Line irradiates and the adhesive (ultraviolet-curing adhesive) of cured type.
As the radiation curing adhesive in adhesive phase 12, such as the radiation curing of addition type can be enumerated Adhesive contains the base polymers such as the acrylic acid series polymeric compounds as acrylic adhesive, and poly- with radiation Monomer component, the oligomer ingredient of the radiation polymerisms of functional groups such as the carbon-to-carbon double bond of conjunction property.
Above-mentioned acrylic acid series polymeric compounds preferably comprise the monomeric unit conduct from acrylate and/or methacrylate Most monomeric unit in terms of quality ratio.Hereinafter, with " (methyl) acrylic acid " expression " acrylic acid " and/or " metering system Acid ", with " (methyl) acrylate " expression " acrylate " and/or " methacrylate ".
It as (methyl) acrylate for the monomeric unit for being used to form acrylic acid series polymeric compounds, such as can enumerate: (first Base) (methyl) acrylic acid containing alkyl such as alkyl acrylate, (methyl) acrylate base ester, (methyl) benzyl acrylate Ester.It as (methyl) alkyl acrylate, such as can enumerate: methyl esters, ethyl ester, propyl ester, the isopropyl ester, fourth of (methyl) acrylic acid Ester, isobutyl ester, secondary butyl ester, tertiary butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2- ethylhexyl, different monooctyl ester, nonyl ester, Last of the ten Heavenly stems ester, isodecyl ester, hendecane base ester, dodecyl ester, tridecane base ester, tetradecane base ester, cetyl ester, stearyl With and eicosane base ester.As (methyl) acrylate base ester, for example, can enumerate (methyl) acrylic acid ring pentyl ester and Cyclohexyl.As (methyl) benzyl acrylate, such as (methyl) phenyl acrylate and (methyl) benzyl acrylate can be enumerated. As the monomer component for the monomeric unit for being used to form acrylic acid series polymeric compounds, a kind of (methyl) acrylate can be used, Two or more (methyl) acrylate can be used.(methyl) as the monomeric unit for being used to form acrylic acid series polymeric compounds Acrylate, (methyl) alkyl acrylate that the carbon number of optimizing alkyl is 8 or more, more preferably 2-EHA and Dodecylacrylate.In addition, suitably showing the adhesiveness based on (methyl) acrylate by adhesive phase 12 The aspect of equal fundamental characteristics, is used to form the ratio of (methyl) acrylate in whole monomer components of acrylic acid series polymeric compounds Preferably 40 mass % or more, more preferably 60 mass % or more.
In order to be modified to its cohesive force, heat resistance etc., acrylic acid series polymeric compounds also may include be originated from can be with (first Base) acrylic ester copolymer other monomers monomeric unit.It as such other monomers, such as can enumerate: carboxylic Monomer, anhydride monomers, the monomer of hydroxyl, the monomer containing glycidyl, containing sulfonic monomer, phosphorous acidic group monomer, The monomer containing functional group such as acrylamide and acrylonitrile.It as carboxylic monomer, such as can enumerate: acrylic acid, methyl Acrylic acid, (methyl) acrylic acid 2- carboxyethyl, (methyl) acrylic acid 5- carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid, with And crotonic acid.As anhydride monomers, such as maleic anhydride and itaconic anhydride can be enumerated.As the monomer of hydroxyl, such as can Enumerate: (methyl) acrylic acid 2- hydroxy methacrylate, (methyl) acrylic acid 2- hydroxy propyl ester, (methyl) acrylic acid 4- hydroxybutyl, The own ester of (methyl) acrylic acid 6- hydroxyl, (methyl) acrylic acid 8- hydroxyl monooctyl ester, (methyl) acrylic acid 10- hydroxyl last of the ten Heavenly stems ester, (methyl) Acrylic acid 12- hydroxy dodecyl acrylate and (methyl) acrylic acid (4- Hydroxymethyl-cyclo-hexyl) methyl esters.As containing glycidyl Monomer, such as (methyl) glycidyl acrylate and (methyl) acrylic acid methylglycidyl esters can be enumerated.As containing Sulfonic monomer, such as can enumerate: styrene sulfonic acid, allyl sulphonic acid, 2- (methyl) acrylamide -2- methyl-prop sulphur Acid, (methyl) acrylamide propane sulfonic acid and (methyl) acrylic acid sulphur propyl ester.As the monomer of phosphorous acidic group, such as can enumerate 2- hydroxyethyl acryloyl phosphate out.As other co-polymerized monomers for acrylic acid series polymeric compounds, can be used Two or more monomers also can be used in a kind of monomer.
Acrylic acid series polymeric compounds may include that be originated from can be with (first to form cross-linked structure in its polymer backbone Base) the monomer components copolymerization such as acrylate multi-functional monomer monomeric unit.As such multi-functional monomer, such as It can enumerate: hexylene glycol two (methyl) acrylate, (poly-) ethylene glycol two (methyl) acrylate, (poly-) propylene glycol two (methyl) Acrylate, neopentyl glycol two (methyl) acrylate, pentaerythrite two (methyl) acrylate, trimethylolpropane tris (first Base) acrylate, pentaerythrite three (methyl) acrylate, dipentaerythritol six (methyl) acrylate, poly- (methyl) propylene Acid glycidyl ester, polyester (methyl) acrylate and carbamate (methyl) acrylate.As for acrylic acid series A kind of multi-functional monomer can be used in the monomer component of polymer, and two or more multi-functional monomers also can be used.In The aspect that the fundamental characteristics such as the adhesiveness based on (methyl) acrylate are suitably shown by adhesive phase 12, is used to form The ratio of multi-functional monomer in whole monomer components of acrylic acid series polymeric compounds is preferably 40 mass % or less, is more preferably 30 mass % or less.
Acrylic acid series polymeric compounds can be obtained by the way that the starting monomer for being used to form it to polymerize.As polymerization side Method, such as can enumerate: polymerisation in solution, emulsion polymerization, bulk polymerization and suspension polymerisation.From use cutting belt 10 and/or cutting From the perspective of high level of cleanliness in the manufacturing method for semiconductor device of die bonding film X, preferably cutting belt 10 and/or cut The low molecular weight substance cut in the adhesive phase 12 in die bonding film X is less, the weight average molecular weight of acrylic acid series polymeric compounds Preferably 100000 or more, 200000~3000000 are more preferably.
In order to improve the weight average molecular weight of the base polymers such as acrylic acid series polymeric compounds, adhesive phase 12 and/or it to be used for shape External crosslinker can for example be contained at its adhesive.As anti-for occurring with base polymers such as acrylic acid series polymeric compounds The external crosslinker of cross-linked structure is answered and formed, polyisocyanate compound, epoxide, polyol compound can be enumerated (polyphenol based compound etc.), aziridine cpd and melamine series crosslinking agent.Adhesive phase 12 and/or it is used to form it Adhesive in the content of external crosslinker relative to 100 mass parts of base polymer be preferably 6 below the mass, more preferably For 0.1~5 mass parts.
As being used to form the above-mentioned radiation polymerizable monomer ingredient of radiation curing adhesive, such as can enumerate Out: carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) propylene Acid esters, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol six (methyl) acrylate and 1,4- butanediol two (methyl) acrylate.As being used to form radiation curing adhesive Above-mentioned radiation polyreactive oligomers ingredient, such as can enumerate: carbamate system, polyether system, Polyester, polycarbonate The various oligomer such as system, polybutadiene system, the ingredient that molecular weight is 100~30000 or so is suitable.Radiation curing is viscous The monomer component of radiation polymerism in mixture, the total content of oligomer ingredient can make institute's shape by irradiation with radiation At adhesive phase 12 bonding force suitably reduce in the range of determine, relative to base polymers such as acrylic acid series polymeric compounds 100 mass parts, for example, 5~500 mass parts, preferably 40~150 mass parts.In addition, the radiation curing as addition type Property adhesive, can be used for example adhesive disclosed in Japanese Unexamined Patent Application 60-196956 bulletin.
As the radiation curing adhesive in adhesive phase 12, such as it can also enumerate inherent type radiation curing Adhesive contains in polymer lateral chain, main polymer chain, carbon-to-carbon of the main polymer chain end with radiation polymerism The base polymer of the functional groups such as double bond.Such inherence type radiation curing adhesive is formed by adhesive for inhibition It is suitable for the unplanned property ongoing change of the mobile caused adhesion characteristic of low molecular weight compositions in layer 12.
As the base polymer contained in inherent type radiation curing adhesive, preferably made with acrylic acid series polymeric compounds For basic framework.As the acrylic acid series polymeric compounds for forming this basic framework, addition type radiation curing can be employed as Acrylic acid series polymeric compounds and polymer as described above in property adhesive.As importing radiation into acrylic acid series polymeric compounds The method of polymerism carbon-to-carbon double bond, such as the following methods can be enumerated: make comprising having specified functional groups (the first functional group) The starting monomer of monomer is copolymerized obtain acrylic acid series polymeric compounds after, make have can occur between the first functional group instead The compound of specified functional groups (second functional group) and radiation polymerism carbon-to-carbon double bond answered and be bonded is maintaining carbon-to-carbon double Condensation reaction or addition reaction occurs with acrylic acid series polymeric compounds in the state of the radiation polymerism of key.
It as the combination of the first functional group and second functional group, such as can enumerate: carboxyl and epoxy group, epoxy group and carboxylic Base, carboxyl and '-aziridino, '-aziridino and carboxyl, hydroxyl and isocyanate group, isocyanate group and hydroxyl.These combinations In, from the viewpoint of the easness of reactive tracing, the combination of hydroxyl and isocyanate group, the combination of isocyanate group and hydroxyl It is suitable.In addition, have the technical difficulty of the polymer of isocyanate group with high reactivity higher due to making, from From the perspective of the easness of production or the acquisition of acrylic acid series polymeric compounds, preferably above-mentioned the of acrylic acid series polymeric compounds side The case where one functional group is hydroxyl and above-mentioned second functional group is isocyanate group.At this point, as having radiation polymerization simultaneously Property carbon-to-carbon double bond and the isocyanate group as second functional group isocyanate compound, i.e. containing radiation polymerism not The isocyanate compound of saturated functional groups, such as can enumerate: methacryloyl isocyanate, 2- methacryloxy Ethyl isocyanate (MOI) and isopropenyl-bis (alpha, alpha-dimethylbenzyl) based isocyanate.
Radiation curing adhesive in adhesive phase 12 preferably comprises Photoepolymerizationinitiater initiater.Cause as photopolymerization Agent, such as can enumerate: α -one alcohol based compound, acetophenone based compound, benzoin ether based compound, ketal based compound, Aromatic sulfonyl based compound, photolytic activity oxime compound, benzophenone based compound, thioxanthones based compound, camphorquinone, Halogenated ketone, acylphosphine oxide and acylphosphanes hydrochlorate.It as α -one alcohol based compound, such as can enumerate: 4- (2- hydroxyl second Oxygroup) phenyl (2- hydroxyl -2- propyl) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, 2- methyl -2- hydroxypropiophenonepreparation and 1- hydroxycyclohexylphenylketone.It as acetophenone based compound, such as can enumerate: methoxyacetophenone, 2,2- dimethoxy- 1,2- diphenylethane-1- ketone, 2,2- diethoxy acetophenone and 2- methyl-1-[4- (methyl mercapto)-phenyl]-2- morpholine For propane -1- ketone.It as benzoin ether based compound, such as can enumerate: benzoin ethyl ether, benzoin iso-propylether and fennel Fragrant benzoin methyl ether.As ketal based compound, such as benzil dimethyl ketal can be enumerated.As aromatic sulfonyl system Object is closed, such as 2- naphthalene sulfonyl chloride can be enumerated.As photolytic activity oxime compound, such as 1- phenyl -1,2- the third two can be enumerated Ketone -2- (O- ethoxy carbonyl) oxime.It as benzophenone based compound, such as can enumerate: benzophenone, Benzoylbenzene first Acid and 3,3'- dimethyl -4- methoxy benzophenone.It as thioxanthones based compound, such as can enumerate: thioxanthones, 2- Clopenthixal ketone, 2- methyl thioxanthones, 2,4- dimethyl thioxanthone, isopropyl thioxanthone, bis- clopenthixal ketone of 2,4-, 2,4- diethyl Thioxanthones and 2,4- diisopropylthioxanthone.Photopolymerization in radiation curing adhesive in adhesive phase 12 causes The content of agent is, for example, 0.05~20 mass parts relative to 100 mass parts of the base polymers such as acrylic acid series polymeric compounds.
Above-mentioned thermal expansion type adhesive in adhesive phase 12 is the bonding containing the ingredient for foaming, expanding because of heating Agent.As the ingredient for foaming, expanding because of heating, such as foaming agent and heat-expandable microsphere can be enumerated.
As the foaming agent of thermal expansion type adhesive, various inorganic system's foaming agents and organic system foaming can be enumerated Agent.As inorganic system's foaming agent, such as can enumerate: ammonium carbonate, ammonium hydrogen carbonate, sodium bicarbonate, ammonium nilrite, sodium borohydride, And nitrine class.It as organic system foaming agent, such as can enumerate: the chlorofluoro-alkanes such as trichlorofluoromethane, dichloro list fluoromethane； The azo compounds such as azodiisobutyronitrile, azodicarbonamide, barium azodicarboxylate；Unifor, diphenyl sulfone -3, The hydrazines based compound such as 3'- disulfonyl hydrazide, 4,4'- oxygroup bis- (benzene sulfonyl hydrazides), allyl bis- (sulfohydrazides)；Tolysulfonyl amino The semicarbazides based compounds such as urea, 4,4'- oxygroup bis- (benzenesulfonamido- ureas)；The triazoles systems such as 5- morpholinyl -1,2,3,4- thiatriazole Compound；And N, N'- dinitrosopentamethylene tetramine, N, N'- dimethyl-N, N'- dinitrosoterephthalamine etc. N- nitroso based compound.
As the heat-expandable microsphere of thermal expansion type adhesive, such as it can enumerate and be sealed in shell due to heating It is easy the microballoon of substance this composition that is vaporization and expanding.As be easy because of heating it is vaporization and expand substance, such as It can enumerate: iso-butane, propane and pentane.By will be easy because of heating it is vaporization and expand matter utilization coacervation, Interfacial polymerization etc. and it is enclosed formed in the substance of shell, heat-expandable microsphere can be made.As the substance for forming shell, can make With the substance of display hot melt, the substance that can be ruptured by enclosing the thermal expansion of substance.As such substance, example Can such as enumerate: vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, Polyacrylonitrile, polyvinylidene chloride and polysulfones.
As the non-reduced type adhesive of above-mentioned bonding force in adhesive phase 12, such as pressure-sensitive adhesive can be enumerated. As the pressure-sensitive adhesive, the acrylic acid series bonding using acrylic acid series polymeric compounds as basic polymer can be used for example Agent, elastomeric adhesive.In the case where adhesive phase 12 contains acrylic adhesive as pressure-sensitive adhesive, as this The acrylic acid series polymeric compounds of the base polymer of acrylic adhesive preferably comprise the monomer list from (methyl) acrylate Member is as most monomeric units in terms of quality ratio.As such acrylic acid series polymeric compounds, such as can enumerate about spoke Ray-curable adhesive and acrylic acid series polymeric compounds as described above.
As the pressure-sensitive adhesive in adhesive phase 12, can use make it is as above about bonding force reduction type adhesive The adhesive of cured form has occurred by irradiation with radiation for the radiation curing adhesive.It is this cured It, can also be aobvious by the content of component of polymer even if the adhesive bonding force of radiation curing class is reduced because of irradiation with radiation Adhesiveness from the component of polymer is shown, can play in defined usage mode can be used for bonding holding adherend Bonding force.
In the adhesive phase 12 of present embodiment, a kind of non-reduced type adhesive of bonding force can be used, also can be used The non-reduced type adhesive of two or more bonding forces.It is bonded furthermore it is possible to be that adhesive phase 12 is whole by the non-reduced type of bonding force Dosage form is at a part for being also possible to adhesive phase 12 is formed by the non-reduced type adhesive of bonding force.For example, adhesive phase 12 has When having single layer structure, it can be 12 entirety of adhesive phase and formed by the non-reduced type adhesive of bonding force, be also possible to adhesive phase Predetermined portion in 12 is formed by the non-reduced type adhesive of bonding force, and other positions are formed by bonding force reduction type adhesive.Separately Outside, in the case where adhesive phase 12 has stepped construction, all layers that can be composition stepped construction are non-reduced by bonding force Type adhesive is formed, and a part of layer being also possible in stepped construction is formed by the non-reduced type adhesive of bonding force.
It adhesive phase 12 and/or is used to form in its adhesive, on the basis of containing above-mentioned each ingredient, can contain Crosslinking accelerator, tackifier, anti-aging agent, colorant etc..As colorant, pigment and dyestuff can be enumerated.In addition, colorant can To be the compound coloured by irradiation with radiation.As such compound, such as leuco dye can be enumerated.
The thickness of adhesive phase 12 is preferably 1~50 μm, more preferably 2~30 μm, more preferably 5~25 μm.It is such It constitutes for example in the case where adhesive phase 12 includes radiation curing adhesive, keeps the adhesive phase 12 solid in radiation It is suitable for changing front and back to obtain the aspect of balance to the bonding force of adhesive layer 20.
The adhesive layer 20 for cutting die bonding film X has as the heat cured bonding agent for showing chip engagement Function.In the present embodiment, the bonding agent for being used to form adhesive layer 20 can have comprising thermosetting resin and for example The composition of thermoplastic resin as Binder Composition, it is possible to have the composition comprising following thermoplastic resin, the heat Plastic resin has and can react with curing agent and generate the heat-curable functional group being bonded.It is used to form adhesive layer 20 When bonding agent has the composition comprising the thermoplastic resin with heat-curable functional group, which does not need to further include heat Thermosetting resin (epoxy resin etc.).Such adhesive layer 20 can have single layer structure, it is possible to have multilayered structure.
Adhesive layer 20 is at the same time comprising in the case where thermosetting resin and thermoplastic resin, as the thermosetting resin, Such as can enumerate: epoxy resin, phenolic resin, amino resins, unsaturated polyester resin, polyurethane resin, silicone resin and Thermoset polyimide resin.As the thermosetting resin in adhesive layer 20, a kind of resin can be used, also can be used two Kind or more resin.From containing in the presence of the ionic impurity of corrosion of semiconductor chip that can become chip coalesced object etc. The reasons why measuring few tendency is set out, as the thermosetting resin for including in adhesive layer 20, preferably epoxy resin.In addition, making For the curing agent of epoxy resin, preferably phenolic resin.
As epoxy resin, such as can enumerate: bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenation are double Phenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol novolak type, ortho cresol novolak type, trihydroxy phenyl first Alkane type, four phenoxy group ethane types, hydantoins type, triglycidyl group isocyanurate type and glycidic amine type ring Oxygen resin.Phenolic resin varnish type epoxy resin, biphenyl type epoxy resin, trihydroxy benzene methylmethane type epoxy resin and four benzene oxygen The rich reactivity and excellent heat resistance with the phenolic resin as curing agent of base ethane type epoxy resin, therefore as bonding agent The epoxy resin for including in layer 20 is preferred.
As the phenolic resin for the curing agent that can be used as epoxy resin, such as can enumerate: novolak phenolics, Methyl novolac type phenolic resin and poly- to the polyoxies styrene such as oxygen styrene.As novolak phenolics, such as can It enumerates: phenol resol resins, phenol aralkyl resin, cresol novolac resin, t-butylphenol novolac tree Rouge and nonyl phenol novolac resin.As the phenolic resin for the curing agent that can be used as epoxy resin, one kind can be used Two or more phenolic resin also can be used in phenolic resin.It is used as in phenol resol resins, phenol aralkyl resin In the case where the curing agent of epoxy resin as chip engagement bonding agent, due to there is the connection that can be improved the bonding agent The tendency of reliability, therefore the curing agent as the epoxy resin for including in adhesive layer 20 is preferred.
From the viewpoint of carrying out the curing reaction of epoxy resin and phenolic resin in adhesive layer 20 sufficiently, phenolic aldehyde Resin reaches preferably 0.5~2.0 relative to 1 equivalent of epoxy group in epoxy resin ingredient with the hydroxyl in the phenolic resin and works as Amount, the amount of more preferable 0.8~1.2 equivalent are included in adhesive layer 20.
The function as heat curable adhesive is suitably shown from the viewpoint of in adhesive layer 20, bonding agent The containing ratio of thermosetting resin in layer 20 is preferably 5~60 mass %, more preferably 10~50 mass %.
It as the thermoplastic resin for including in adhesive layer 20, such as can enumerate: natural rubber, butyl rubber, isoamyl Diene rubber, chloroprene rubber, vinyl-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate are total The polyamide resins such as polymers, polybutadiene, polycarbonate resin, thermoplastic polyimide resin, 6- nylon, 6,6- nylon The saturated polyester resins such as rouge, phenoxy resin, acrylic resin, PET, PBT, polyamide-imide resin and fluororesin. As the thermoplastic resin in adhesive layer 20, a kind of resin can be used, two or more resins also can be used.As viscous Connect the thermoplastic resin for including in oxidant layer 20, from due to ionic impurity is few and heat resistance is high it is easy to ensure that real by adhesive layer 20 This reason of existing joint reliability is set out, preferably acrylic resin.
The acrylic resin for including as thermoplastic resin in adhesive layer 20, which preferably comprises, is originated from (methyl) propylene The monomeric unit of acid esters is as most main monomer units in terms of quality ratio.As this (methyl) acrylate, such as It can be used poly- with a kind of acrylic acid series of ingredient about the radiation curing adhesive as 12 formation of adhesive phase Close object and as described above identical (methyl) acrylate of substance.Include as thermoplastic resin in adhesive layer 20 third Olefin(e) acid resinoid may include be originated from can be with the monomeric unit of other monomers of (methyl) acrylic ester copolymer.As it is this its Its monomer component, such as can enumerate: carboxylic monomer, anhydride monomers, the monomer of hydroxyl, the list containing glycidyl It is body, the monomer containing sulfonic monomer, the monomer of phosphorous acidic group, acrylamide, acrylonitrile etc. containing functional group, various multi-functional Monomer, specifically, can be used and be related to one kind of the radiation curing adhesive as 12 formation of adhesive phase In the acrylic acid series polymeric compounds of ingredient as can with other monomers of (methyl) acrylic ester copolymer and substance as described above Identical substance.Realizing high cohesion from the viewpoint of in adhesive layer 20, the acrylic acid that includes in adhesive layer 20 Resinoid is preferably the copolymer of (methyl) acrylate, carboxylic monomer, the monomer of nitrogen atom and multi-functional monomer. As (methyl) acrylate, optimizing alkyl carbon number is 4 (methyl) alkyl acrylates below.As the multi-functional list Body, preferably poly epihydric alcohol base system polyfunctional monomer.The acrylic resin for including in adhesive layer 20 is more preferably third The copolymer that olefin(e) acid ethyl ester, butyl acrylate, acrylic acid, acrylonitrile and poly- (methyl) glycidyl acrylate are formed.
The weight average molecular weight for example as the thermoplastic resin of acrylic resin in adhesive layer 20 is preferably 500000 hereinafter, more preferably 480000 hereinafter, more preferably 450000 or less.With molecular weight for example 50000 or more.
The glass transition temperature for example as the thermoplastic resin of acrylic resin in adhesive layer 20 is preferred It is 25~50 DEG C.About the glass transition temperature of polymer, the vitrifying found out based on following Fox formula can be used and turn Temperature (theoretical value).The glass transition temperature Tg and every kind of composition monomer in the polymer that Fox formula is polymer The relational expression of the glass transition temperature Tg i of homopolymer.In following Fox formula, Tg indicates the glass transition temperature of polymer (DEG C), Wi indicate to constitute the weight fraction of the monomer i of the polymer, the glass transition temperature of the homopolymer of Tgi expression monomer i (℃).About the glass transition temperature of homopolymer, literature value can be used.For example, " 7 coating of new peak molecular library synthesis Resin introduction " (Bei Gang association three writes, and macromolecule prints and publishes meeting, nineteen ninety-five), " acrylate catalogue (1997 annual version) " (beautiful sun of Mitsubishi Co., Ltd.) in list the glass transition temperatures of various homopolymers.On the other hand, the vitrifying about the homopolymer of monomer Transition temperature can also be found out by the method specifically recorded in Japanese Unexamined Patent Publication 2007-51271 bulletin.
Fox formula 1/ (273+Tg)=Σ [Wi/ (273+Tgi)]
When adhesive layer 20 includes thermoplastic resin with heat-curable functional group, as the thermoplastic resin, such as can be with Use the acrylic resin containing heat-curable functional group.It is used to form the acrylic resin for containing heat-curable functional group Acrylic resin preferably comprises the monomeric unit from (methyl) acrylate as most main lists in terms of quality ratio Body unit.As this (methyl) acrylate, can be used for example and about the radiation as 12 formation of adhesive phase A kind of acrylic acid series polymeric compounds of ingredient of curing adhesive and identical (methyl) acrylate of substance as described above.Separately On the one hand, it as the heat-curable functional group for being used to form the acrylic resin containing heat-curable functional group, such as can enumerate: Glycidyl, carboxyl, hydroxyl and isocyanate group.Among these, glycidyl and carboxyl can be properly used.That is, As the acrylic resin containing heat-curable functional group, can properly use the acrylic resin containing glycidyl, Acrylic resin containing carboxyl.In addition, the curing agent as the acrylic resin containing heat-curable functional group, such as can To use a kind of external crosslinker of the ingredient for the radiation curing adhesive for being taken as 12 formation of adhesive phase sometimes and Curing agent as described above.Heat-curable functional group in acrylic resin containing heat-curable functional group is glycidyl When, polyphenol based compound can be properly used as curing agent, above-mentioned various phenolic resin can be used for example.
The containing ratio of high molecular weight components as described above and/or resin component in adhesive layer 20 is preferably 50~ 95 mass %, more preferably 50~90 mass %.
Adhesive layer 20 can contain filler.By being compounded filler into adhesive layer 20, adhesive layer 20 can be adjusted The physical property such as elasticity modulus, electric conductivity, the thermal conductivity such as storage tensile modulus.As filler, inorganic filler and organic can be enumerated Filler, particularly preferred inorganic filler.It as inorganic filler, such as can enumerate: aluminium hydroxide, magnesium hydroxide, calcium carbonate, carbonic acid Magnesium, calcium silicates, magnesium silicate, calcium oxide, magnesia, aluminium oxide, aluminium nitride, aluminium borate whisker, boron nitride, crystalline silica, The metal simple-substances such as amorphous silica and aluminium, gold, silver, copper, nickel, alloy, amorphous carbon black, graphite.Filler can have ball The various shapes such as shape, needle-shaped, flakey.Adhesive layer 20 can be compounded with a kind of filler, can also be compounded with two or more Filler.The filler containing ratio of adhesive layer 20 is preferably 35~60 mass %, more preferably 40~55 mass %, is more preferably 42~52 mass %.
The average grain diameter of filler when adhesive layer 20 is containing filler is preferably 0.005~10 μm, more preferably 0.005 ~1 μm.The composition that the average grain diameter of the filler is 0.005 μm or more in adhesive layer 20 for realizing to semiconductor crystal wafer etc. It is suitable for the high wettability of adherend, cementability.The average grain diameter of the filler is 10 μm of compositions below for viscous It connects and enjoys sufficient filler additive effect in oxidant layer 20 and ensure for heat resistance to be suitable.The average grain diameter of filler for example may be used It is found out with using luminosity formula particle size distribution meter (trade name " LA-910 ", Horiba Ltd's system).
Adhesive layer 20 can according to need and include one or more kinds of other compositions.As the other compositions, Such as it can enumerate: fire retardant, silane coupling agent and ion trap agent.It as fire retardant, such as can enumerate: three oxidations Antimony, antimony pentaoxide and brominated epoxy resin.It as silane coupling agent, such as can enumerate: β-(3,4- epoxycyclohexyl) second Base trimethoxy silane, γ-glycidoxypropyltrime,hoxysilane and γ-glycidoxypropyl diethoxy Base silane.As ion trap agent, such as can enumerate: hydrotalcite, bismuth hydroxide, oxidizing aqueous antimony (such as East Asia synthesis " IXE-300 " of Co. Ltd. system), basic zirconium phosphate (such as " IXE-100 " of Toagosei Co., Ltd), the silicon of specific structure Sour magnesium (such as " Kyoward 600 " of Kyowa Chemical Industry Co., Ltd) and alumina silicate (such as consonance chemical industry strain " Kyoward 700 " of formula commercial firm).The compound that complex compound can be formed between metal ion can also be used as ion and catch Obtain agent use.It as such compound, such as can enumerate: three azole compounds, four azole compounds and bipyridyl system Compound.Among these, the stability of the complex compound formed between metal ion, preferably triazole system Close object.It as such three azole compounds, such as can enumerate: 1,2,3- benzotriazole, 1- { N, N- bis- (2- ethylhexyls) Amino methyl } benzotriazole, carboxyl benzotriazole, 2- (2- hydroxy-5-methyl base phenyl) benzotriazole, 2- (2- hydroxyl -3,5- two Tert-butyl-phenyl) -5- chlorobenzotriazole, 2- (2- hydroxyl -3- tert-butyl -5- aminomethyl phenyl) -5- chlorobenzotriazole, 2- (2- hydroxyl Base -3,5- di-tert-pentyl-phenyl) benzotriazole, 2- (2- hydroxyl -5-t- octyl phenyl) benzotriazole, 6- (2 benzotriazole Base) -4- t-octyl -6'- tert-butyl -4'- methyl -2,2' methylene bis phenol, 1- (2,3- dihydroxypropyl) benzotriazole, 1- (1,2- dicarboxyl diethyl) benzotriazole, 1- (2- ethylhexylamino methyl) benzotriazole, bis- tertiary pentyl -6- { (H- of 2,4- Benzotriazole -1- base) methyl } phenol, 2- (2- hydroxyl -5- tert-butyl-phenyl) -2H- benzotriazole, octyl -3- [3- tert-butyl - 4- hydroxyl -5- (the chloro- 2H- benzotriazole -2- base of 5-) phenyl] propionic ester, 2- ethylhexyl -3- [3- tertiary butyl-4-hydroxy -5- (the chloro- 2H- benzotriazole-2- base of 5-) phenyl] propionic ester, 2- (2H- benzotriazole-2- base)-6- (1- methyl-1-phenyl second Base) -4- (1,1,3,3- tetramethyl butyl) phenol, 2- (2H- benzotriazole -2- base) -4-TBP, 2- (2- hydroxyl -5- Aminomethyl phenyl) benzotriazole, 2- (2- hydroxyl -5-t- octyl phenyl)-benzotriazole, 2- (3- tert-butyl -2- hydroxy-5-methyl base Phenyl) -5- chlorobenzotriazole, 2- (2- hydroxyl -3,5- di-tert-pentyl-phenyl) benzotriazole, 2- (2- hydroxyl -3,5- di-t-butyl Phenyl) the chloro- benzotriazole of -5-, 2- [2- hydroxyl -3,5- two (1,1- dimethyl benzyl) phenyl] -2H- benzotriazole, the Asia 2,2'- Bis- [6- (2H- benzotriazole -2- base] -4- (1,1,3,3- tetramethyl butyl) phenol of methyl], 2- [2- hydroxyl -3,5- bis- (α, α - Dimethyl benzyl) phenyl] -2H- benzotriazole and methyl -3- [3- (2H- benzotriazole -2- base) -5- tertiary butyl-4-hydroxy Phenyl] propionic ester.In addition, hydroxy-containing compounds as defined in hydroquinone compound, hydroxy-anthraquione compound, polyphenolic substance etc. Also it can be used as ion trap agent use.It as such hydroxy-containing compounds, such as can enumerate: 1,2- Benzenediol, alizarin, anthracene Rufin, tannin, gallic acid, gallicin and pyrogallol.
The thickness of adhesive layer 20 is for instance in 1~200 μm of range, and preferably 5~40 μm.The thickness of adhesive layer 20 Adhesive layer 20 for 5 μm or more this compositions component framed for attaching is followed the micro concavo-convex of the frame component surface and is played It is preferred for good frame component stickiness.Adhesive layer 20 with a thickness of 40 μm or less this compositions in bonding agent Layer 20 in ensure it is aftermentioned extension process in cutting off property for be preferred.
Adhesive layer 20 relative to silicon plane with 30mm/ minutes 100 DEG C, 180 ° of peel angle and peeling rate conditions 180 ° of peel adhesions of 0.5~5N/10mm are shown in the disbonded test (the 1st disbonded test) of progress.The bonding force is preferred For 0.6~3N/10mm, more preferably 0.7~2N/10mm.At the same time, adhesive layer 20 relative to silicon plane with 23 DEG C, The condition that 180 ° and peeling rate 30mm/ minutes of peel angle carries out showing 3~15N/ in disbonded test (the 2nd disbonded test) 180 ° of peel adhesions of 10mm.The bonding force is preferably 3.2~12N/10mm, more preferably 3.4~10N/10mm.It is above-mentioned viscous Resultant force is measured by the disbonded test carried out for adhesive layer 20 before curing.In addition, adhesive layer 20 is opposite In disbonded test (the 3rd removing examination that silicon plane was carried out with 30mm/ minutes -15 DEG C, 180 ° of peel angle and peeling rate conditions Test) in show 180 ° of peel adhesions of 5N/10mm or more.The bonding force is preferably 5.5N/10mm or more, more preferably 6N/10mm or more.
Adhesive layer 20 is for width 10mm and 200 μm of thickness of 20 coupons of adhesive layer are with initial chuck spacing Loss moulds that 22.5mm, frequency 1Hz, dynamic strain 0.005% and 10 DEG C/min of heating rate of condition measure, at 100 DEG C Amount is preferably 0.1~0.5MPa, more preferably 0.12~0.45MPa.In addition, adhesive layer 20 is directed to width 10mm and thickness 200 μm of 20 coupons of adhesive layer are with initial chuck spacing 22.5mm, frequency 1Hz, dynamic strain 0.005% and heating rate Maximum values that 10 DEG C/min of condition measures, that loss angle tangent is in the range of 25~50 DEG C are 0.8 or more.Above-mentioned loss Modulus and loss angle tangent can be found out by using the Measurement of Dynamic Viscoelasticity that measurement of dynamic viscoelasticity device carries out.
Adhesive layer 20 is in nitrogen atmosphere, 23 DEG C ± 2 DEG C and 10 DEG C/min of heating rate of standard weights temperature of condition Under weightless measurement in, the weight-loss ratio at 100 DEG C be 0.8% hereinafter, preferably 0.6% hereinafter, more preferably 0.5% with Under.The weight-loss ratio of buffer substrate tablet can be used differential thermal-thermogravimetric simultaneous measuring apparatus and be measured.As identical device, such as can To enumerate the differential thermal analyzer Thermo plus TG8120 of Rigaku Corporation.
It can for example be made in the following manner with above such cutting die bonding film X constituted.
It, can be by the way that adhesive phase be arranged on the substrate 11 of preparation for cutting the cutting belt 10 of die bonding film X 12 make.For example, the substrate 11 of resin can be by calendering film method, the tape casting in organic solvent, enclosed system Inflation extrusion molding, T mould extrusion molding, coetrusion, the film-forming methods such as dry lamination method make.Adhesive phase 12 can pass through As under type is formed: the adhesive composition of 12 formation of adhesive phase is prepared, then on substrate 11 or defined isolation film It is coated with the adhesive composition on (i.e. release liner) and forms adhesive composition layer, as needed to the adhesive composition Layer is dried, and is consequently formed.As the coating method of adhesive composition, for example, the coating of roll coating, silk screen and Rotogravure application.The temperature of drying for adhesive composition layer is, for example, 80~150 DEG C, the time is, for example, 0.5~5 minute. When being formed with adhesive phase 12 on isolation film, the adhesive phase 12 with the isolation film is fitted on substrate 11.As above behaviour Make, cutting belt 10 can be made.
For cutting the adhesive layer 20 of die bonding film X, it can make in the following way: prepare adhesive layer 20 Then the adhesive composite of formation is coated with the adhesive composite on defined isolation film and forms adhesive composite Layer, is as needed dried the adhesive composite layer, to make.As the coating method of adhesive composite, example It can such as enumerate: roll coating, silk screen coating and rotogravure application.The temperature of drying for adhesive composite layer is, for example, 70~ 160 DEG C, the time is, for example, 1~5 minute.
In the production of cutting die bonding film X, then, for example crimps and paste in 12 side of adhesive phase of cutting belt 10 Close adhesive layer 20.Binding temperature is, for example, 30~50 DEG C, and preferably 35~45 DEG C.Laminate pressure (line pressure) is, for example, 0.1 ~20kgf/cm, preferably 1~10kgf/cm.In the case that adhesive phase 12 is above-mentioned radiation-curable adhesive layer, When irradiating ultraviolet light israds to adhesive phase 12 after being bonded adhesive layer 20, from such as 11 side of substrate to adhesive phase 12 carry out irradiation with radiation, and exposure is, for example, 50~500mJ/cm2.It to carry out in cutting die bonding film X as viscous The region (irradiation area R) that the bonding force of mixture layer 12 reduces the irradiation of measure is usually the patch of adhesive layer 20 in adhesive phase 12 Close the region in addition to its peripheral part in region.
For example, as above operation can make cutting die bonding film X shown in FIG. 1.
About the adhesive layer 20 of the die bonding film as cutting die bonding film X, as described above, in the 1st stripping The 180 ° of removings bonding shown in separating test (100 DEG C, 180 ° of peel angle, peeling rate 30mm/ minutes) relative to silicon plane Power (the 1st bonding force) is 0.5~5N/10mm, preferably 0.6~3N/10mm, more preferably 0.7~2N/10mm.For warp It crosses in the chip bonding process of the semiconductor chip with adhesive layer obtained from extension process as be described hereinafter, above-mentioned such structure At the engagement state between the adhesive layer 20 being adapted ensure that under hot conditions and semiconductor chip and inhibit the semiconductor chip Tilting.
About the adhesive layer 20 of the die bonding film as cutting die bonding film X, as described above, in the 2nd stripping The 180 ° of peel adhesions shown in separating test (23 DEG C, 180 ° of peel angle, peeling rate 30mm/ minutes) relative to silicon plane (the 2nd bonding force) is 3~15N/10mm, preferably 3.2~12N/10mm, more preferably 3.4~10N/10mm.It is above-mentioned such It constitutes and is suitable for being to maintain in chip bonding process ensuring cutting between the adhesive layer 20 of engagement state and semiconductor chip Temperature-fall period after cutting process, engagement state under room temperature and the tilting for inhibiting the semiconductor chip.
As previously discussed, cutting die bonding film X is suitable in the chip for being directed to the semiconductor chip with adhesive layer 20 Inhibit the tilting of semiconductor chip in bonding process, and is suitable for inhibiting after chip bonding process the tilting of semiconductor chip.
The adhesive layer 20 of die bonding film X is cut for width 10mm and 200 μm of thickness of adhesive layer 20 Coupons are surveyed with initial chuck spacing 22.5mm, frequency 1Hz, dynamic strain 0.005% and 10 DEG C/min of heating rate of condition Loss modulus at fixed 100 DEG C is as described above, it is preferred to be 0.1~0.5MPa, more preferably 0.12~0.45MPa.It is above-mentioned this The composition of sample is in adhesive layer 20 to ensure 100 DEG C and the wetability near it, realize the 1st above-mentioned bonding force in terms of be Suitable.
The adhesive layer 20 of die bonding film X is cut in the examination for width 10mm and thick 200 μm of adhesive layer 20 Print is with initial chuck spacing 22.5mm, frequency 1Hz, dynamic strain 0.005% and the measurement of 10 DEG C/min of heating rate of condition Maximum value of loss angle tangent in the range of 25~50 DEG C be as described above 0.8 or more.Above-mentioned such constitute is to glue It is suitable for connecing in terms of ensuring 25~50 DEG C and the wetability near it in oxidant layer 20, realizing the 2nd above-mentioned bonding force.
The adhesive layer 20 of die bonding film X is cut in the 3rd disbonded test (- 15 DEG C, 180 ° of peel angle, removing speed Degree 30mm/ minute) in 180 ° of peel adhesions showing relative to silicon plane be 5N/10mm or more, preferably 5.5N/10mm with On, more preferably 6N/10mm or more.Implement in a low temperature of using such as -10 DEG C or less with gluing as die bonding film In the case where the above-mentioned extension process cut off for connecing oxidant layer 20, above-mentioned such constitute is to inhibit to inhibit bonding agent in the process Peeling-off aspect is suitable between layer 20 and semiconductor chip.
The adhesive layer 20 of die bonding film X is cut in 23 DEG C ± 2 DEG C of nitrogen atmosphere, standard weights temperature, Yi Jisheng Under conditions of 10 DEG C/min of warm speed in weightless measurement, the weight-loss ratio at 100 DEG C is 0.8% hereinafter, preferably as described above 0.6% hereinafter, more preferably 0.5% or less.From inhibit the exhaust gas composition from adhesive layer 20 caused by semiconductor chip Pollution caused by adhesive layer 20 closing force reduce from the perspective of, above-mentioned such constitute is suitable.
Preferably, cut die bonding film X adhesive layer 20 include resin and filler, the resin include its 50 The acrylic resin and heat-curing resin of~95 mass %.It is bonded from technique at a high temperature of such as 100 DEG C or so From the perspective of oxidant layer 20 is relative to the wetability of semiconductor chip and the balance of retentivity, above-mentioned such constitute is suitable 's.The weight average molecular weight of the acrylic resin be preferably 500000 hereinafter, more preferably 480000 hereinafter, more preferably 450000 or less.From the adhesive layer 20 in technique at a high temperature of such as 100 DEG C or so relative to semiconductor chip From the perspective of balance between wetability and retentivity, above-mentioned such constitute is suitable.In addition, adhesive layer 20 is filled out Expect that containing ratio is preferably 35~60 mass %, more preferably 40~55 mass %, more preferably 42~52 mass %.It is above-mentioned this The composition of sample is in terms of realizing the cutting off property in extension process and the balance between cohesive force in adhesive layer 20 to be suitable.
Fig. 2 to Fig. 7 indicates the manufacturing method for semiconductor device of an embodiment of the invention.
In this manufacturing method for semiconductor device, firstly, as shown in (a) of Fig. 2 and (b) of Fig. 2, to semiconductor crystal wafer W It is formed slot segmentation 30a (slot segmentation formation process).Semiconductor crystal wafer W has the first face Wa and the second face Wb.In semiconductor crystal wafer W The first face side Wa, made various semiconductor elements (illustration omitted), and be already formed with this on the first face Wa Wire structures needed for semiconductor element etc. (illustration omitted).In this process, the wafer processing band T1 quilt with adhesive surface T1a After conforming to the second face side Wb of semiconductor crystal wafer W, in the state that wafer processing maintains semiconductor crystal wafer W with band T1, make The slot segmentation 30a of prescribed depth is formed in the first face side Wa of semiconductor crystal wafer W with the rotating blade of cutter device etc..Slot segmentation 30a is to make semiconductor crystal wafer W be separated into the gap of semiconductor core blade unit (in Fig. 2~Fig. 4, with the schematic earth's surface of thick line Show slot segmentation 30a).
Then, as shown in (c) of Fig. 2, the wafer processing of adhesive surface T2a have to use with T2 to semiconductor crystal wafer W's The fitting in the first face side Wa and wafer processing with T1 from the removing of semiconductor crystal wafer W.
Then, as shown in (d) of Fig. 2, wafer processing with T2 maintain semiconductor crystal wafer W in the state of, by from Second face Wb carries out grinding processing and semiconductor crystal wafer W is made to be thinned to defined thickness (wafer thinning process).Grinding processing can It is carried out using the grinding processing unit (plant) for having grinding grinding stone.By the wafer thinning process, in the present embodiment, energy is formed Enough monolithics turn to the semiconductor crystal wafer 30A of multiple semiconductor chips 31.Specifically, semiconductor crystal wafer 30A has in the wafer Have the second face side Wb will monolithic turn to multiple semiconductor chips 31 position connection position (linking part).Semiconductor crystal wafer Between the second face side Wb front end of the second face Wb and slot segmentation 30a of the thickness of linking part in 30A, i.e. semiconductor crystal wafer 30A Distance be, for example, 1~30 μm, preferably 3~20 μm.
Then, as shown in (a) of Fig. 3, wafer processing will be held in, cutting chip is connect with the semiconductor crystal wafer 30A with T2 The adhesive layer 20 for closing film X is bonded.Thereafter, as shown in (b) of Fig. 3, wafer processing is peelled off from semiconductor crystal wafer 30A and is used Band T2.It, can be in semiconductor die when cutting the adhesive phase 12 in die bonding film X is radiation curing adhesive phase After circle 30A fits in adhesive layer 20, ultraviolet light israds is irradiated to adhesive phase 12 from 11 side of substrate, is cut to replace Above-mentioned irradiation with radiation in the manufacturing process of die bonding film X.Exposure is, for example, 50~500mJ/cm2.In cutting core In chip bonding film X, the region (photograph shown in FIG. 1 of the irradiation of the measure as the bonding force for reducing adhesive phase 12 is carried out Penetrate region R) it is the region for for example removing its peripheral portion in 20 fit area of adhesive layer in adhesive phase 12.
Then, after attaching ring frame 41 on the adhesive phase 20 of the cutting belt 10 in cutting die bonding film X, such as scheme Shown in 4 (a), the cutting die bonding film X with semiconductor crystal wafer 30A is fixed in the holding meanss of expanding unit 42。
Then, the first extension process (cold extension work under conditions of relative low temperature is carried out as shown in (b) of Fig. 4 Sequence), semiconductor crystal wafer 30A is singulated as multiple semiconductor chips 31, meanwhile, cut the adhesive layer of die bonding film X 20 are cut off into the adhesive layer 21 of small pieces, obtain the semiconductor chip 31 with adhesive layer.In this process, expanding unit institute The jack-up component 43 for the hollow cylindrical having cutting die bonding film X figure in downside abutted with cutting belt 10 and on It rises, the cutting belt 10 for being fitted with the cutting die bonding film X of semiconductor crystal wafer 30A is extended, so that it is along comprising partly leading Body wafer 30A radially and circumferentially including two-dimensional directional be stretched.The extension in cutting belt 10 with generate be preferably The condition progress of 15~32MPa, the tensile stress being more preferably in the range of 20~32MPa.Temperature strip in cold extension process Part is preferably 0 DEG C or less, more preferably -20~-5 DEG C, more preferably -15~-5 DEG C, more preferably -15 DEG C.Cold extension process In the expansion rate rate of climb of component 43 (jack up) be preferably 0.1~100mm/ seconds.In addition, the extension in cold extension process Amount is preferably 3~16mm.
In this process, Yu Houdu is thin in semiconductor crystal wafer 30A and the position that is easily broken off is cut off, thus singualtion At semiconductor chip 31.At the same time, in this process, the tensile stress generated in cutting belt 10 is played a role with following state: In the adhesive layer 20 closely sealed with the adhesive phase 12 for the cutting belt 10 to be extended, closely sealed each area with each semiconductor chip 31 The deformation in domain is suppressed, and on the other hand, the opposite position of slot segmentation between semiconductor chip 31 does not generate this resistance to deformation Effect.As a result, in adhesive layer 20, the opposite position of slot segmentation between semiconductor chip 31 can be cut off.In this work After sequence, as shown in (c) of Fig. 4, jacks up component 43 and decline, the extended mode of cutting belt 10 releases.
Then, the second extension process under conditions of relatively-high temperature, band bonding agent are carried out as shown in (a) of Fig. 5 The distance between the semiconductor chip 31 of layer (separation distance) is extended.In this process, the hollow circle that expanding unit has The jack-up component 43 of post shapes rises again, and the cutting belt 10 of cutting die bonding film X is extended.In second extension process Temperature condition is, for example, 10 DEG C or more, and preferably 15~30 DEG C.Expansion rate in second extension process (jacks up component 43 to rise Speed) be, for example, 0.1~10mm/ seconds, preferably 0.3~1mm/ seconds.In addition, the propagation in the second extension process is, for example, 3~16mm.In this process, the separation distance of the semiconductor chip 31 with adhesive layer, which is scaled up to, can utilize aftermentioned pickup work Degree of the sequence from the suitably semiconductor chip 31 of pick-up tape adhesive layer of cutting belt 10.After this process, such as (b) institute of Fig. 5 Show, jacks up component 43 and decline, the extended mode of cutting belt 10 is released from.From partly the leading with adhesive layer inhibited in cutting belt 10 The separation distance of body chip 31 sets out in terms of stenosis is narrow after extended mode releasing, will preferably cut before releasing extended mode It cuts the more outward part heating of ratio 31 holding areas of semiconductor chip in band 10 and makes its contraction.
Then, as needed and after use the cleaning solutions such as water to have the semiconductor chip 31 with adhesive layer cutting After the cleaning process cleaned with 31 side of semiconductor chip in 10, as shown in fig. 6, from 10 pick-up tape adhesive layer of cutting belt Semiconductor chip 31 (pickup process).For example, being cut for as the semiconductor chip 31 with adhesive layer for picking up object Cutting in the figure of band 10 downside rises the thimble component 44 of mechanism for picking after being jacked up across cutting belt 10, utilizes absorption folder Tool 45 carries out absorption holding.In pickup process, the jack-up speed of thimble component 44 is, for example, 1~100mm/ seconds, thimble component 44 jack-up amount is, for example, 50~3000 μm.
Then, as shown in (a) of Fig. 7, the semiconductor chip 31 with adhesive layer being picked by adhesive layer 21 and It pre-fixes in defined adherend 51 (chip bonding process).It as adherend 51, such as can enumerate: lead frame, TAB (Tape Automated Bonding, tape connect automatically) film, circuit board and semiconductor chip separately made. It, can also successively multistage layer by the adhesive layer 21 on substrate and on the semiconductor chip 31 of chip engagement in the process The semiconductor chip 31 with adhesive layer of the specified quantity of the structure of the folded semiconductor device corresponding to manufacturing objective.
Then, as shown in (b) of Fig. 7, the electrode pad (illustration omitted) of semiconductor chip 31 is made by bonding wire 52 (wire bonding sequence) is electrically connected with portion of terminal possessed by adherend 51 (illustration omitted).The electrode of semiconductor chip 31 welds Pad, the portion of terminal of adherend 51 and the wiring of bonding wire 52 fetch realization by the supersonic welding with heating, not make to glue The mode for connecing the generation heat cure of oxidant layer 21 carries out.As bonding wire 52, such as gold thread, aluminum steel or copper wire can be used.Lead Lead heating temperature in bonding is, for example, 80~250 DEG C.
Then, as shown in (c) of Fig. 7, by for protecting semiconductor chip 31 on adherend 51, bonding wire 52 Semiconductor chip 31 is sealed (sealing process) by sealing resin 53.In this process, the heat cure of adhesive layer 21 is promoted.This process In, such as sealing resin 53 formed by using the transfer modling technology that mold carries out.Composition material as sealing resin 53 Material, can be used for example epoxy system resin.In this process, the heating temperature for being used to form sealing resin 53 is, for example, 165~185 DEG C, heating time is, for example, 60 seconds~a few minutes.In this process (sealing process), do not carried out sufficiently in the solidification of sealing resin 53 In the case where, the rear curing process for sealing resin 53 to be fully cured is carried out after this process.In sealing process, even if In the case where 21 not complete heat cure of adhesive layer, also it can make together bonding agent with sealing resin 53 in rear curing process 21 complete heat cure of layer.In rear curing process, heating temperature is, for example, 165~185 DEG C, and heating time is, for example, 0.5~8 small When.
Such as the above operation, semiconductor device can be manufactured.
In present embodiment, as described above, pre-fixed after adherend 51 in the semiconductor chip 31 with adhesive layer, Wire bonding sequence is carried out without making adhesive layer 21 reach complete heat cure.Also it can replace this composition, be bonded in band The semiconductor chip 31 of oxidant layer is pre-fixed after adherend 51, carries out wire bonding work again after adhesive layer 21 is thermally cured Sequence.
In manufacturing method for semiconductor device, after (c) referring to Fig. 2 after above explained process, Fig. 8 can be carried out Shown in wafer thinning process replace (d) referring to Fig. 2 in above explained wafer thinning process.Wafer shown in Fig. 8 In thinning process, in the state that wafer processing maintains semiconductor crystal wafer W with band T2, added by carrying out grinding from the second face Wb Work and be thinned to until the wafer reaches specific thickness, formed comprising multiple semiconductor chips 31 and be held in wafer processing band The semiconductor crystal wafer dividing body 30B of T2.In this process, it can use wafer grinding to slot segmentation 30a from the second face Wb Side expose until method (first method), can also using by wafer from the second face side Wb grinding to reach slot segmentation 30a it Before, thereafter, make to crack and shape between slot segmentation 30a and the second face Wb by the pressing force effect from grindstone to wafer At the method (second method) of semiconductor crystal wafer dividing body 30B.According to used method, referring to (a) of Fig. 2 and (b) of Fig. 2 And the slot segmentation 30a being formed as described above, the depth from the first face Wa is properly determined.In Fig. 8, for after first The slot segmentation 30a of method or slot segmentation 30a and coupled crackle after second method, with the schematic earth's surface of thick line Show.In present embodiment, the cutting die bonding film X semiconductor crystal wafer dividing body 30B that as above makes of fitting is being replaced On the basis of above-mentioned semiconductor crystal wafer 30A, Fig. 3~Fig. 7 is referred to carry out above-mentioned each process.
(a) of Fig. 9 and (b) of Fig. 9 indicate laggard to cutting die bonding film X laminated semiconductor wafer dividing body 30B The first capable extension process (cold extension process).In this process, the jack-up component for the hollow cylindrical that expanding unit has 43 in the figure of cutting die bonding film X downside with cutting belt 10 abut and rise, be fitted with semiconductor crystal wafer dividing body 30B The cutting belt 10 of cutting die bonding film X extended so that its along including semiconductor crystal wafer dividing body 30B radial direction and Two-dimensional directional including circumferencial direction is stretched.The extension with generated in cutting belt 10 such as 1~100MPa, preferably 5~ The condition of tensile stress in the range of 40MPa carries out.Temperature condition in this process is preferably 0 DEG C or less, more preferably -20 ~-5 DEG C, more preferably -15~-5 DEG C, more preferably -15 DEG C.Expansion rate in this process (jacks up the speed that component 43 rises Degree) it is preferably 1~500mm/ seconds.In addition, the propagation in this process is preferably 50~200mm.Cold extension work in this way The adhesive layer 20 of sequence, cutting die bonding film X is cut off into the adhesive layer 21 of small pieces, to obtain with adhesive layer Semiconductor chip 31.Specifically, the tensile stress generated in cutting belt 10 is played a role with following state: In in this process It is fifty-fifty with semiconductor crystal wafer dividing body 30B with the adhesive phase 12 for the cutting belt 10 to be extended in closely sealed adhesive layer 20 The deformation in the closely sealed each region of conductor chip 31 is suppressed, and on the other hand, the slot segmentation 30a between semiconductor chip 31 is opposite Position do not generate the effect of this resistance to deformation.As a result, the slot segmentation 30a in adhesive layer 20, between semiconductor chip 31 Opposite position can be cut off.
It, can also be as follows to cutting die bonding film X fitting in the manufacturing method for semiconductor device of present embodiment The semiconductor crystal wafer 30C of production, to replace to cutting die bonding film X laminated semiconductor wafer 30A or semiconductor crystal wafer The above-mentioned composition of dividing body 30B.
As shown in (a) of Figure 10 and (b) of Figure 10, firstly, forming modification area 30b on semiconductor crystal wafer W.Semiconductor Wafer W has the first face Wa and the second face Wb.Various semiconductor elements have been made in the first face side Wa of semiconductor crystal wafer W Part (illustration omitted), and wire structures needed for being already formed with the semiconductor element on the first face Wa etc. (illustration omitted). In this process, wafer processing with adhesive surface T3a is with after being bonded to the first face side Wa of semiconductor crystal wafer W with T3, in crystalline substance In the state that circle processing maintains semiconductor crystal wafer W with band T3, process with the opposite side with T3 from wafer to the edge semiconductor crystal wafer W Its divide preset lines irradiation focal point alignment inside wafer laser, in semiconductor and the abrasion based on Multiphoton Absorbtion Modification area 30b is formed in wafer W.Modification area 30b is for semiconductor crystal wafer W to be separated into the crisp of semiconductor core blade unit Atenuator region.Form modification area 30b's in segmentation preset lines by laser light irradiation about in semiconductor crystal wafer Method, such as be documented in Japanese Unexamined Patent Publication 2002-192370 bulletin.Laser in this method, in present embodiment Irradiation condition such as appropriate adjustment in the range of following conditions.
<laser irradiation condition>
(A) laser
Laser source: semiconductor laser excites Nd:YAG laser
Wavelength: 1064nm
Laser spot sectional area: 3.14 × 10-8cm2
Oscillatory mode: Q-switched pulse
Repetition rate: 100kHz or less
Pulse width: 1 μ s or less
Output power: 1mJ or less
Laser quality: TEM00
Polarized light property: linear polarization
(B) light harvesting lens
Multiplying power: 100 times or less
NA:0.55
To the transmissivity of optical maser wavelength: 100% or less
(C) movement speed of the mounting table of mounting semiconductor substrate: 280mm/ seconds or less
Then, it in the state that wafer is processed and maintains semiconductor crystal wafer W with band T3, is ground by what is carried out from the second face Wb Cut processing and be thinned to until semiconductor crystal wafer W reaches specific thickness, as shown in (c) of Figure 10, formation can monolithic turn to it is more The semiconductor crystal wafer 30C (wafer thinning process) of a semiconductor chip 31.In present embodiment, to cutting die bonding film The X semiconductor crystal wafer 30C that as above makes of fitting come on the basis of replacing semiconductor crystal wafer 30A, be referred to Fig. 3~Fig. 7 come into The above-mentioned each process of row.
(b) of (a) of Figure 11 and Figure 11 are indicated to carrying out after cutting die bonding film X laminated semiconductor wafer 30C First extension process (cold extension process).In this process, the jack-up component 43 for the hollow cylindrical that expanding unit has exists It cuts downside in the figure of die bonding film X to abut and rise with cutting belt 10, is fitted with the cutting chip of semiconductor crystal wafer 30C The cutting belt 10 of bonding film X is extended so that its along including semiconductor crystal wafer 30C radially and circumferentially including two Dimension direction is stretched.The extension in cutting belt 10 to generate drawing in the range of such as 1~100MPa, preferably 5~40MPa The condition for stretching stress carries out.Temperature condition in this process is preferably 0 DEG C or less, more preferably -20~-5 DEG C, more preferably - 15~-5 DEG C, more preferably -15 DEG C.Expansion rate (jack up component 43 rise speed) in this process is preferably 1~ 500mm/ seconds.In addition, the propagation in this process is preferably 50~200mm.Cold extension process in this way, cutting chip connect The adhesive layer 20 for closing film X is cut off into the adhesive layer 21 of small pieces, to obtain the semiconductor chip 31 with adhesive layer. Specifically, crackle is formed at the fragile modification area 30b in semiconductor crystal wafer 30C in this process, so that monolithic is melted into Semiconductor chip 31.At the same time, in this process, the tensile stress generated in cutting belt 10 is played a role with following state: In Each semiconductor core with the adhesive phase 12 for the cutting belt 10 to be extended in closely sealed adhesive layer 20, with semiconductor crystal wafer 30C Deformation in the closely sealed each region of piece 31 is suppressed, on the other hand, the position opposite with the crackle forming part of wafer not Generate this resistance to deformation effect.As a result, the crackle forming part between semiconductor chip 31 is opposite in adhesive layer 20 Position can be cut off.
Embodiment
[embodiment 1]
<production of cutting belt>
In the reaction vessel for having condenser pipe, nitrogen ingress pipe, thermometer and agitating device, in 60 DEG C, nitrogen atmosphere Under to comprising 100 mass parts of 2-EHA (2EHA), 19 mass parts of acrylic acid 2- hydroxy methacrylate (HEA), as poly- The mixture for closing 0.4 mass parts of benzoyl peroxide of initiator and 80 mass parts of toluene as polymer solvent carries out 10 hours It stirs (polymerization reaction).It is obtained as a result, containing acrylic polymer P1Polymer solution.Then, third will be contained comprising this Olefin(e) acid quasi polymer P1Polymer solution, 2- methacryloxyethyl isocyanates (MOI) and urged as addition reaction The mixture of the dibutyl tin dilaurate of agent stirs 60 hours (addition reaction) under 50 DEG C, air atmosphere.The reaction is molten The compounding amount of MOI is relative to acrylic compounds based polymer P in liquid1100 mass parts are 1.2 mass parts.On the other hand, the reaction is molten The compounding amount of dibutyl tin dilaurate is relative to acrylic polymer P in liquid1100 mass parts are 0.1 mass parts.By this Addition reaction is obtained containing the acrylic polymer P in side chain with methylacryloyl2Polymer solution.Then, In In the polymer solution, relative to acrylic compounds based polymer P2100 mass parts, the polyisocyanic acid esterification of 1.3 mass parts of addition Close the Photoepolymerizationinitiater initiater (trade name of object (trade name " Colonate L ", TOSOH Co., Ltd's manufacture) and 3 mass parts " Irgacure 184 ", BASF AG's manufacture) and mix, also, mixture addition toluene is diluted, so that this is mixed The viscosity at room temperature for closing object reaches 500mPas, to obtain binder solution.Then, de- with organosilicon is implemented In the silicone release process face of the PET isolation film in the face of mould processing, using coating device coating adhesive solution, film is formed, To the film at 120 DEG C heat drying 2 minutes, 10 μm of thickness of adhesive phase is formed on PET isolation film.Then, it uses Laminating machine is (thick to the substrate of exposed surface fitting vinyl-vinyl acetate copolymer (EVA) system of the adhesive phase at room temperature 115 μm of degree).Production cutting belt as described above.
(formation of adhesive layer)
By acrylic resin A1(trade name " Teisan Resion SG-80H "), weight average molecular weight 350000, glass Glass transition temperature Tg is 11 DEG C, the manufacture of Nagase ChemteX Co., Ltd.) 100 mass parts, phenolic resin (trade name " MEHC-7851SS " is solid-state at 23 DEG C, bright and chemical conversion Co., Ltd. manufacture) 14 mass parts, silica filler (trade name " SO-25R ", Admatechs Company Limited manufacture) 69 mass parts are added in the methyl ethyl ketone of specified amount and mix It closes, to prepare the adhesive composite C that total solid content concentration is 20 mass %1.Then, de- with organosilicon is implemented Coating device coating adhesive composition C is used in the silicone release process face of the PET isolation film in the face of mould processing1And form painting Film, to the film at 130 DEG C heat drying 2 minutes, on PET isolation film formed 10 μm of thickness be used as die bonding film Adhesive layer.
(production of cutting die bonding film)
From above-mentioned cutting belt remove PET isolation film after, make on one side the adhesive layer exposed from cutting belt with PET every Above-mentioned adhesive layer contraposition from film, is bonded using laminating machine at room temperature on one side.With such as above operation, having made has The cutting die bonding film of the embodiment 1 of the stepped construction of adhesive layer comprising cutting belt and as die bonding film.
[embodiment 2]
When forming adhesive layer (10 μm of thickness), adhesive composite C is used2Instead of above-mentioned bonding agent constituent C1, In addition to this, it is operated in the same way with the cutting die bonding film of embodiment 1, makes the cutting die bonding film of embodiment 2. Adhesive composite C2It obtains in the following manner: by acrylic resin A1(trade name " Teisan Resion SG- The manufacture of 80H ", Nagase ChemteX Co., Ltd.) 100 mass parts, epoxy resin (trade name " JER1001 ", Mitsubishi Chemical's strain The manufacture of formula commercial firm) 53 mass parts, phenolic resin (trade name " MEHC-7851SS ", bright and chemical conversion Co., Ltd. manufacture) 45 mass Rule are added in part, silica filler (trade name " SO-25R ", Admatechs Company Limited manufacture) 193 mass parts Quantitative methyl ethyl ketone and mixing, are adjusted to 20% for solid component concentration.
[comparative example 1]
When forming adhesive layer (10 μm of thickness), adhesive composite C is used3Instead of above-mentioned adhesive composite C1, In addition to this, it is operated in the same way with the cutting die bonding film of embodiment 1, the cutting die bonding film of comparison example 1. Adhesive composite C3It obtains in the following manner: by acrylic resin A2(trade name " Teisan Resion SG- P3 ", weight average molecular weight 850000, glass transition temperature Tg are 12 DEG C, the manufacture of Nagase ChemteX Co., Ltd.) 100 matter Measure part, epoxy resin (trade name " JER1001 ", Mitsubishi chemical Co., Ltd's manufacture) 58 mass parts, phenolic resin (trade name " MEHC-7851SS ", it is bright and chemical conversion Co., Ltd. manufacture) 55 mass parts, silica filler (trade name " SO-25R ", Admatechs Company Limited manufacture) 69 mass parts are added and specified amount methyl ethyl ketone and mix, and solid component is dense Degree is adjusted to 20 mass %.
[comparative example 2]
When forming adhesive layer (10 μm of thickness), adhesive composite C is used4Instead of above-mentioned adhesive composite C1, remove It except this, is operated in the same way with the cutting die bonding film of embodiment 1, has made the cutting die bonding film of comparative example 2. Adhesive composite C4It obtains in the following manner: by acrylic resin A2(trade name " Teisan Resion SG- The manufacture of P3 ", Nagase ChemteX Co., Ltd.) 100 mass parts, epoxy resin (trade name " JER1001 ", Mitsubishi Chemical's strain The manufacture of formula commercial firm) 73 mass parts, phenolic resin (trade name " MEHC-7851SS ", bright and chemical conversion Co., Ltd. manufacture) 89 mass Regulation is added in part, silica filler (trade name " SO-25R ", Admatechs Company Limited manufacture) 69 mass parts The methyl ethyl ketone of amount and mixing, are adjusted to 20 mass % for solid component concentration.
(180 ° of peel adhesions of adhesive layer)
For the adhesive layer in each cutting die bonding film of embodiment 1,2 and Comparative Examples 1 and 2,180 ° have been investigated Peel adhesion.Firstly, removing adhesive layer, the surface of the side for being pasted with cutting belt in the adhesive layer from cutting belt Band (trade name " BT-315 ", Nitto Denko Corp's manufacture), then cuts out examination from the lining adhesive layer in upper adhesive lining Print (width 10mm × length 60mm).Then, for the Silicon Wafer loaded in 60 DEG C of set temperature of heating plate, confirm it After surface temperature is 60 DEG C, the exposed surface of the adhesive layer in the silicon wafer surface (Si plane) and coupons is bonded.This is viscous Conjunction is carried out by the crimping operation for making the hand roller round trip of 2kg.Then, using cupping machine (trade name " Autograph AGS-J ", Shimadzu Scisakusho Ltd's manufacture) with 100 DEG C, 180 ° of peel angle and peeling rate 300mm/ The condition of minute carries out the disbonded test from Silicon Wafer peel test specimen piece, determines adhesive layer at 100 DEG C of Silicon Wafer 180 ° of peel adhesions (N/10mm) (measurement of the 1st bonding force).In addition, respectively cutting for embodiment 1,2 and Comparative Examples 1 and 2 The adhesive layer in die bonding film is cut, measuring temperature is set as 23 DEG C to replace 100 DEG C, in addition to this, at 100 DEG C The measurement of 180 ° of peel adhesions operate in the same way, measurement adhesive layer is to 180 ° of peel adhesions (N/10mm) of Silicon Wafer (measurement of the 2nd bonding force).It, will about adhesive layer in each cutting die bonding film of embodiment 1,2 and Comparative Examples 1 and 2 Measuring temperature is set as -15 DEG C to replace 100 DEG C, in addition to this, grasps identically as 180 ° of peel adhesion measurements at 100 DEG C Make, measurement is for adhesive layer to 180 ° of peel adhesions (N/10mm) (measurement of the 3rd bonding force) of Silicon Wafer.These are commented Valence result is recorded in table 1.
(Measurement of Dynamic Viscoelasticity of adhesive layer)
For the adhesive layer of each cutting die bonding film of embodiment 1,2 and Comparative Examples 1 and 2, based on using dynamically The Measurement of Dynamic Viscoelasticity that determination of viscoelasticity device (trade name " RSAIII ", the manufacture of TA Instruments company) carries out, is adjusted The peak value of the loss modulus at 100 DEG C and the loss angle tangent at 25~50 DEG C is looked into.Sample for Measurement of Dynamic Viscoelasticity Piece prepares in the following way: after each adhesive layer is laminated for 200 μm of thickness of laminated body by formation, cutting from the laminated body The coupons of width 10mm × length 40mm size out.In addition, in this measurement, coupons keep using the initial chuck of chuck Spacing is set as 22.5mm, and mode determination is set as stretch mode, and measuring temperature range is set as -40 DEG C~285 DEG C, and frequency is set as 1Hz, dynamic strain are set as 0.005%, and heating rate is set as 10 DEG C/min.The loss modulus at 100 DEG C found out (MPa) peak value of the loss angle tangent and at 25~50 DEG C is disclosed in table 1 and (about the adhesive layer in comparative example 1, is not shown Show at the peak of the loss angle tangent of 25~50 DEG C of range).
(weight-loss ratio of adhesive layer)
For the adhesive layer of each cutting die bonding film of embodiment 1,2 and Comparative Examples 1 and 2, investigate 100 Weight-loss ratio at DEG C.The sample that about 10mg is cut out from adhesive layer, using differential thermal-, (trade name " shows difference to thermogravimetric simultaneous measuring apparatus Thermobalance TG-DTA TG8120 ", Rigaku Corporation manufacture) determine weightlessness in temperature-rise period.This measurement is in nitrogen It has been carried out using 10 DEG C/min of heating rate from 23 DEG C to 300 DEG C of the heating as standard weights temperature under gas atmosphere.Sample from The slip (%) of the weight at weight (standard weights) to 100 DEG C at 23 DEG C is recorded in table 1.
(evaluation that removing inhibits)
Following bonding process has been carried out using each cutting die bonding film of embodiment 1,2 and Comparative Examples 1 and 2, has been used for The 1st extension process (cold extension process), the 2nd extension process (room temperature extension process) for separation and the chip engagement work cut off Sequence.
In bonding process, wafer processing band (trade name " UB-3083D ", Nitto Denko Corp's system will be held in Make) semiconductor crystal wafer fit in cutting die bonding film adhesive layer, then, from semiconductor crystal wafer removing wafer processing With band.Semiconductor crystal wafer is the semiconductor crystal wafer by hemisection cutting and thinning, is formed with the slot segmentation (width of singualtion 25 μm, be in the latticed of every piece of 10mm × 10mm), and with 50 μm of thickness.In fitting, using laminating machine, by fitting speed Degree is set as 10mm/ seconds, and temperature condition is set as 60 DEG C, and pressure condition is set as 0.15MPa.In addition, in this process, by semiconductor crystal wafer In with the face paste of slot segmentation forming face opposite side together in cutting die bonding film.
Cold extension process uses mould separating device (trade name " Die Separator DDS2300 ", DISCO Corporation system), it is carried out by its cold extension unit.Specifically, in the above-mentioned cutting chip for having semiconductor crystal wafer Ring frame is attached on bonding film and/or its adhesive phase, then the cutting die bonding film is set in device, is utilized With the cold extension unit of device, the cutting belt of the cutting die bonding film with semiconductor crystal wafer is extended.The cold expansion It opens up in process, temperature is -15 DEG C, and expansion rate is 200mm/ seconds, propagation 12mm.According to this process, in cutting belt, half Semiconductor wafer is singulated, and obtains a variety of semiconductor chips with adhesive layer.
In the stage that experienced above-mentioned cold extension process, semiconductor chip will not occur in whole semiconductor chips The removing being evaluated as in cold extension process in the case of the tilting of adhesive layer on Self cleavage band inhibits " good ", will be at 1 or more Semiconductor chip in there is a situation where the tiltings of adhesive layer on semiconductor chip Self cleavage band to be evaluated as in cold extension process Removing inhibit " bad ".
Room temperature extends process and uses mould separating device (trade name " Die Separator DDS2300 ", DISCO Corporation system), it is carried out by its room temperature expanding element.Specifically, for the band that experienced above-mentioned cold extension process There is the cutting belt of the cutting die bonding film of semiconductor crystal wafer, is extended using the room temperature expanding element of the device.This is often In temperature extension process, temperature is 23 DEG C, expansion rate is 1mm/ seconds, propagation 10mm.Then, to experienced room temperature extension It cuts die bonding film and implements heat shrink processing.The treatment temperature is 220 DEG C, the processing time is 20 seconds.
In chip bonding process, carry out by the semiconductor chip with adhesive layer obtained from above-mentioned extension process 7 layers of chip engagement.Specifically, firstly, picking up from cutting belt by a band bonding obtained from above-mentioned extension process Then the semiconductor chip of oxidant layer clips its adhesive layer and carries out chip engagement to lead frame.Then, it picks up and passes through from cutting belt Another semiconductor chip with adhesive layer obtained from above-mentioned extension process, then clips its adhesive layer on lead frame Semiconductor chip carry out chip engagement.At this point, carrying out chip engagement by configuration as follows: making upper layer semiconductor chip from vertical view Next semiconductor chip of the surface of the four edges of the underlying semiconductor chip of square (is partly led on the upper layer for overlooking square Body chip) four edges to be in position directly above offset.The direction of the position deviated from position directly above is in deviation The direction of a pair of of parallel edges in layer semiconductor chip, positional shift length are 200 μm.Thereafter, 5 times are repeated for Lived through on lead frame chip engagement semiconductor chip, it is above-mentioned by extension process obtained from another band bonding agent The chip by adhesive layer of the semiconductor chip of layer engages.Each chip engagement in this process is to make upper layer semiconductor chip Above-mentioned positional shift (200 μm of positional shift length) relative to underlying semiconductor chip is the engagement of unidirectional chip.Separately Outside, each chip in this process is bonded on 100 DEG C, plus-pressure 0.2MPa and carries out under conditions of 2 seconds pressing times.
In the 7th layer of chip zygophase, semiconductor chip self bonding agent will not occur in whole semiconductor chips The removing that the case where layer tilts is evaluated as in chip engagement (DB) process inhibits " good ", will be in 1 or more semiconductor chip Inhibit " bad " there is a situation where the tilting of semiconductor chip self bonding oxidant layer is evaluated as the removing in DB process.In addition, in core The stage of 1 time is placed after chip bonding process at room temperature, semiconductor chip will not occur in whole semiconductor chips certainly The case where adhesive layer tilts is evaluated as the removing after DB process at room temperature and inhibits " good ", will be in 1 or more semiconductor core Inhibit " bad " there is a situation where the tilting of semiconductor chip self bonding oxidant layer is evaluated as the removing after DB process at room temperature in piece. These evaluation results are recorded in table 1.
[evaluation]
Each cutting die bonding film of embodiment 1,2 has 180 ° of peel adhesions at 100 DEG C relative to Si plane In the range of 0.5~5N/10mm and at 23 DEG C relative to 180 ° of peel adhesions of Si plane 3~15N/10mm range Interior adhesive layer.Undergoing band adhesive layer obtained from the extension process carried out using such cutting die bonding film Semiconductor chip in, the tilting of semiconductor chip self bonding oxidant layer in chip bonding process does not occur, also, even if in chip It is cooled to the stage of room temperature after bonding process, the tilting of semiconductor chip self bonding oxidant layer does not occur yet.In contrast, it is undergoing Semiconductor chip with adhesive layer obtained from the extension process carried out using each cutting die bonding film of Comparative Examples 1 and 2 In, under room temperature cooling state in chip bonding process, thereafter, the tilting of semiconductor chip self bonding oxidant layer has occurred.
In addition, 180 ° of removings that each cutting die bonding film of embodiment 1,2 has at -15 DEG C relative to Si plane are viscous Resultant force is the adhesive layer of 5N/10mm or more.In using the cold extension process that cutting die bonding film carries out as this, The tilting of semiconductor chip self bonding oxidant layer does not occur.In contrast, in each cutting die bonding film using Comparative Examples 1 and 2 In the cold extension process of progress, the generation of the tilting of semiconductor chip self bonding oxidant layer observed.
[table 1]

Claims (10)

1. a kind of cutting die bonding film, has:
Cutting belt has the stepped construction comprising substrate and adhesive phase；And
Described adhesive layer in adhesive layer, with the cutting belt is strippingly closely sealed,
The adhesive layer relative to silicon plane with 100 DEG C, 30mm/ minutes conditions of 180 ° of peel angle and peeling rate into 180 ° of peel adhesions of 0.5~5N/10mm are shown in the 1st capable disbonded test, also,
The adhesive layer relative to silicon plane with 23 DEG C, 30mm/ minutes conditions of 180 ° of peel angle and peeling rate into 180 ° of peel adhesions of 3~15N/10mm are shown in the 2nd capable disbonded test.
2. cutting die bonding film according to claim 1, wherein
The adhesive layer for width 10mm and 200 μm of thickness of adhesive layer coupons with initial chuck spacing 22.5mm, Loss modulus that frequency 1Hz, dynamic strain 0.005% and 10 DEG C/min of heating rate of condition measure, at 100 DEG C are 0.1 ~0.5MPa.
3. cutting die bonding film according to claim 1, wherein
The adhesive layer for width 10mm and 200 μm of thickness of adhesive layer coupons with initial chuck spacing 22.5mm, Frequency 1Hz, dynamic strain 0.005% and the measurement of 10 DEG C/min of heating rate of condition, loss angle tangent are at 25~50 DEG C Maximum value in range is 0.8 or more.
4. cutting die bonding film according to claim 1, wherein
The adhesive layer is carried out relative to silicon plane with 30mm/ minutes -15 DEG C, 180 ° of peel angle and peeling rate conditions The 3rd disbonded test in show 180 ° of peel adhesions of 5N/10mm or more.
5. cutting die bonding film according to claim 1, wherein
In the weightless measurement carried out with nitrogen atmosphere, 23 DEG C ± 2 DEG C and 10 DEG C/min of heating rate of standard weights temperature of condition In, weight-loss ratio of the adhesive layer at 100 DEG C is 0.8% or less.
6. cutting die bonding film described according to claim 1~any one of 5, wherein
The adhesive layer includes resin and filler, and the resin includes the acrylic resin and thermosetting property of 50~95 mass % Resin.
7. cutting die bonding film according to claim 6, wherein
The filler containing ratio of the adhesive layer is 35~60 mass %.
8. cutting die bonding film according to claim 6, wherein
The weight average molecular weight of the acrylic resin is 500000 or less.
9. a kind of manufacturing method of semiconductor device comprising following process:
1st process, the adhesive layer one in cutting die bonding film described in any one of claim 1~8 Side fitting can monolithic turn to the semiconductor crystal wafer of multiple semiconductor chips or the semiconductor crystal wafer comprising multiple semiconductor chips Dividing body；
2nd process is extended the cutting die bonding film, thus cuts off the adhesive layer, obtains band bonding agent The semiconductor chip of layer；And
3rd process engages the semiconductor chip chip with adhesive layer in substrate or other semiconductor core on pieces.
10. the manufacturing method of semiconductor device according to claim 9, wherein
Temperature condition in 2nd process is 0 DEG C or less.
CN201910439435.9A 2018-05-24 2019-05-24 Cut die bonding film and manufacturing method for semiconductor device Pending CN110527444A (en)

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JP2018099368A JP7033004B2 (en) 2018-05-24 2018-05-24 Dicing Diebond film and semiconductor device manufacturing method
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CN115210075A (en) * 2020-03-27 2022-10-18 琳得科株式会社 Method for manufacturing sheet for manufacturing semiconductor device

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TWI814821B (en) 2023-09-11
KR20190134478A (en) 2019-12-04

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