CN109207077A - The manufacturing method of cutting belt, cutting die bonding film and semiconductor device - Google Patents
The manufacturing method of cutting belt, cutting die bonding film and semiconductor device Download PDFInfo
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- CN109207077A CN109207077A CN201810725608.9A CN201810725608A CN109207077A CN 109207077 A CN109207077 A CN 109207077A CN 201810725608 A CN201810725608 A CN 201810725608A CN 109207077 A CN109207077 A CN 109207077A
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- bonding film
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- cutting belt
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/245—Vinyl resins, e.g. polyvinyl chloride [PVC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2423/00—Presence of polyolefin
- C09J2423/04—Presence of homo or copolymers of ethene
- C09J2423/046—Presence of homo or copolymers of ethene in the substrate
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2427/00—Presence of halogenated polymer
- C09J2427/006—Presence of halogenated polymer in the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The present invention provides the manufacturing method of cutting belt, cutting die bonding film and semiconductor device.It provides in room temperature extension and is not susceptible to the cutting belt of the semiconductor chip with die bonding film floated later and uses the cutting die bonding film of the cutting belt.A kind of cutting belt, its adhesive phase for including substrate and being layered in aforementioned substrates, at least one direction of cutting belt, under the conditions of 23 DEG C of temperature carry out 30% stretch 1000 seconds after stress relaxation rate be 45% or more, at least one aforementioned direction, under the conditions of 23 DEG C of temperature carry out 30% stretch 1000 seconds after stress value be 4MPa or less.
Description
Technical field
The present invention relates to cutting belts, the manufacturing method of cutting die bonding film and semiconductor device.More specifically,
Cutting die bonding film the present invention relates to cutting belt, using the cutting belt and half using the cutting die bonding film
The manufacturing method of conductor device.
Background technique
In the past, in the manufacture of semiconductor device, sometimes using cutting belt, cutting die bonding film.Cutting belt be
It is provided with the form of adhesive phase on substrate and is used for following purposes: semiconductor crystal wafer is configured on adhesive phase, in order to
It avoids the semiconductor chip after cutting (cutting) semiconductor die bowlder singualtion from dispersing and it is fixed (referring for example to special
Sharp document 1).
Cutting die bonding film is strippingly provided with die bonding film on the adhesive phase of cutting belt.Partly leading
In the manufacture of body device, semiconductor crystal wafer is held on the die bonding film of cutting die bonding film, to semiconductor die
Circle is cut and forms single semiconductor chip.Then, by semiconductor chip together with die bonding film from cutting belt
Upper removing makes semiconductor chip be fixed on the adherends such as lead frame by die bonding film.
When using the cutting die bonding film of die bonding film is laminated in cutting belt, in die bonding film
When keeping lower cutting semiconductor crystal wafer, need with semiconductor crystal wafer to cut off die bonding film simultaneously.But using Buddha's warrior attendant
In the conventional cutting method of stone blade, worry the influence of the heat generated when cutting cause die bonding film and cutting belt adhesion,
The mutual fixed, cutting swarf of semiconductor chip caused by the generation of cutting swarf is attached to semiconductor chip side etc., it is therefore desirable to
Cut-off velocity is reduced, this leads to the rising of cost.
Therefore, following method is proposed in recent years: carrying out back side grinding after the surface of semiconductor crystal wafer forms slot, thus
To single semiconductor chip method (sometimes referred to as " DBG (Dicing Before Grinding, be ground after cutting) ") (such as
Referring to patent document 2)；Modification area is formed to the pre-segmentation line irradiation laser in semiconductor crystal wafer, to make semiconductor die
Circle becomes that Ground Split can be easy along pre-segmentation line, the semiconductor crystal wafer is then pasted on cutting die bonding film, then
By extension under cutting belt at low temperature (such as -25~0 DEG C) (hereinafter sometimes referred to " cooling extension "), thus by semiconductor crystal wafer
It is cut off together with die bonding film, the method for obtaining single semiconductor chip (semiconductor chip with die bonding film)
(referring for example to patent document 3).This is the so-called method for being referred to as stealthy cutting (Stealth Dicing, registered trademark).
In addition, it is also known that following method in DBG: obtained single semiconductor chip being pasted on cutting die bonding film, then
Cooling extension is carried out to cutting belt, so that die bonding film be cut off, obtains the semiconductor for individually having die bonding film
The method of chip.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2011-216563 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2003-007649 bulletin
Patent document 3: Japanese Unexamined Patent Publication 2009-164556 bulletin
Summary of the invention
Problems to be solved by the invention
In DBG, stealthy cutting etc., after cutting off die bonding film, by cutting die bonding film near room temperature
It extends (hereinafter sometimes referred to " room temperature extension ") and keeps the adjacent single semiconductor chip with die bonding film mutual
Interval is widened, and so that the outer peripheral portion of semiconductor chip is heat-shrinked and (hereinafter sometimes referred to " is heat-shrinked "), is partly led having widened
Body chip is fixed in the state of mutual interval, obtained individually with chip engagement thereby, it is possible to be easy to carry out
The pickup of the semiconductor chip of film.
In recent years, with the needs of the high capacity of semiconductor, just the multiple stratification of advancing circuit layer, silicon layer be thinned.
But with the multiple stratification of circuit layer, the thickness (overall thickness) of circuit layer increases, to there is the ratio of resin contained in circuit layer
The increased tendency of example, thus the difference of the linear expansivity of the circuit layer of multiple stratification and thinned silicon layer becomes significantly, semiconductor core
Piece becomes easy warpage.Therefore, the semiconductor chip of circuit layer multiple stratification obtained after cutting, with die bonding film
Be particularly easy in the adhesive phase of cutting belt and the interface of die bonding film when room temperature extends and after it (such as to picking up
During before taking etc.) generate float (removing).
The present invention makes in view of the above problems, it is intended that providing in room temperature extension and being not easy to send out later
Green tape have the semiconductor chip of die bonding film the cutting belt floated, using the cutting belt cutting die bonding film,
And the manufacturing method of the semiconductor device using the cutting die bonding film.
The solution to the problem
The inventors of the present invention have made intensive studies to achieve the goals above, as a result, it has been found that, using carrying out at normal temperature
30% stretch and through when after stress relaxation rate be particular value or more and it is above-mentioned through when after stress value to be that particular value is below cut
When cutting band, in room temperature extension and later, even if being also not susceptible to float using the semiconductor chip of circuit layer multiple stratification.
The present invention is completed based on these opinions.
That is, the present invention provides a kind of cutting belt, it is described to cut with substrate and the adhesive phase being layered on above-mentioned substrate
Cut at least one direction of band, under the conditions of 23 DEG C of temperature carry out 30% stretch 1000 seconds after stress relaxation rate be
45% or more, at least one above-mentioned direction, under the conditions of 23 DEG C of temperature carry out 30% stretch 1000 seconds after stress value
For 4MPa or less.
When carrying out room temperature extension to cutting belt, cutting belt generates stress.The stress of generation is spreading later and is disappearing, and leads to
Chang Zhizhi needs the long period until disappearing, and therefore, can remain in cutting belt for a long time.The inventors of the present invention think: producing in this way
The bottom surface that raw and remaining stress is applied to the semiconductor chip with die bonding film of the singualtion in cutting belt is (outstanding
It is its end), so that in room temperature extension, floating for the semiconductor chip with die bonding film occur after it.Especially
In the case where the semiconductor chip that it has been circuit layer multiple stratification, it is easy that warpage occurs as described above, therefore, the ratio of circuit layer
Example is more, is more easy to happen floating for the semiconductor chip with die bonding film.
But cutting belt of the invention is by making at least one direction, 30% drawing of progress under the conditions of 23 DEG C of temperature
Stress relaxation rate after stretching 1000 seconds be 45% or more and make at least one above-mentioned direction, under the conditions of 23 DEG C of temperature
Stress value after carrying out 30% stretching 1000 seconds is 4MPa hereinafter, the stress generated in room temperature extension is reduced in early stage to foot
Therefore enough low values can inhibit in the semiconductor core for having die bonding film as much as possible in room temperature extension and later
The stress that the bottom surface of piece applies.As a result, needless to say the semiconductor chip of non-multiple stratification, is using the half of circuit layer multiple stratification
In the case where conductor chip, it is not susceptible in room temperature extension and also float later.
In addition, the thickness of above-mentioned substrate is preferably 40~150 μm in cutting belt of the invention.By making cutting belt
Stress relaxation rate and carry out 30% stretch 1000 seconds after stress value in a specific range on the basis of, make the thickness of substrate
Within the above range, so that stress is easy to be evenly applied to the semiconductor chip with die bonding film in room temperature extension
On, it is not easy unevenly to generate and therefore residual stress is less susceptible in room temperature extension and later occur to engage with chip thin
The semiconductor chip of film floats.
In addition, cutting belt of the invention is preferably, the chip being laminated on the above-mentioned adhesive phase of above-mentioned cutting belt is connect
Close film initial elastic modulus it is high when, at least one above-mentioned direction, under the conditions of 23 DEG C of temperature carry out 30% stretch when
Stress value be 5MPa or more.In this case, semiconductor crystal wafer, cutting off for die bonding film become more to hold in cooling extension
Easily.
In addition, cutting belt of the invention is preferably, the chip being laminated on the above-mentioned adhesive phase of above-mentioned cutting belt is connect
Close film initial elastic modulus it is high when, at least one above-mentioned direction, under the conditions of 23 DEG C of temperature carry out 30% stretch when
Stress value and at least one above-mentioned direction, under the conditions of 23 DEG C of temperature carry out 30% stretch 1000 seconds after stress value
Difference be 5MPa or more.In this case, the stress that generates is reduced in early stage in room temperature extension, therefore, in room temperature extension and
It can inhibit the stress applied in the bottom surface of the semiconductor chip with die bonding film as much as possible later, even if using
In the case where the semiconductor chip of circuit layer multiple stratification, it is less susceptible in room temperature extension and also to float later.
In addition, the present invention provides a kind of cutting die bonding film, with above-mentioned cutting belt and it is layered in above-mentioned cutting
Die bonding film on the above-mentioned adhesive phase of band, said chip bonding film are cut off to make by application tensile stress
With.Such cutting die bonding film of the invention can be cut off die bonding film by cooling extension, and normal
The stress that generates is can be reduced in early days therefore and later can be as far as possible in room temperature extension to sufficiently low value when temperature extension
Ground inhibits the stress applied in the bottom surface of the semiconductor chip with die bonding film.Being as a result, can by cooling extension
By cutting die bonding film that die bonding film is cut off and do not carry out multiple stratification semiconductor chip needless to say, make
In the case where semiconductor chip with circuit layer multi-layer, it is not susceptible in room temperature extension and also float later.
In addition, the present invention provides a kind of manufacturing method of semiconductor device comprising following process: in above-mentioned cutting chip
Paste the dividing body or energy list of the semiconductor crystal wafer comprising multiple semiconductor chips in the said chip bonding film side of bonding film
Piece turns to the process A of the semiconductor crystal wafer of multiple semiconductor chips；Above-mentioned cutting chip is engaged under conditions of compared with low temperature thin
Above-mentioned cutting belt in film is extended, and at least cuts off said chip bonding film, obtains half with die bonding film
The process B of conductor chip；Above-mentioned cutting belt is extended under conditions of higher temperatures, is widened above-mentioned with die bonding film
The mutual interval of semiconductor chip process C；With the step D for picking up the above-mentioned semiconductor chip with die bonding film.
Using the manufacturing method of such semiconductor device of the invention, the stress generated in room temperature extension is reduced in early stage to enough
Low value, therefore, room temperature extension when and later can inhibit as much as possible have die bonding film semiconductor chip
The stress that bottom surface applies.Therefore, it is capable of providing the manufacturing method of following semiconductor device: can be extended by cooling by chip
Bonding film cut off and the semiconductor chip of non-multiple stratification needless to say, in the semiconductor core using circuit layer multiple stratification
In the case where piece, also room temperature extend when and be not susceptible to float later.
The effect of invention
Cutting belt of the invention is not susceptible to the semiconductor chip with die bonding film when room temperature extends and later
Float.Especially also it is not susceptible to float using the semiconductor chip of circuit layer multiple stratification.In addition, using
The cutting die bonding film of cutting belt of the invention is when room temperature extends and is not susceptible to be laminated with semiconductor chip later
Semiconductor chip with die bonding film float.
Detailed description of the invention
Fig. 1 is the schematic cross-section for showing an embodiment of cutting belt of the invention.
Fig. 2 is the schematic cross-section for showing an embodiment of cutting die bonding film of the invention.
Fig. 3 shows a part in the manufacturing method for having used the semiconductor device of cutting die bonding film of the invention
Process.
Fig. 4 shows a part in the manufacturing method for having used the semiconductor device of cutting die bonding film of the invention
Process.
Fig. 5 shows a part in the manufacturing method for having used the semiconductor device of cutting die bonding film of the invention
Process.
Fig. 6 shows a part in the manufacturing method for having used the semiconductor device of cutting die bonding film of the invention
Process.
Fig. 7 shows a part in the manufacturing method for having used the semiconductor device of cutting die bonding film of the invention
Process.
Fig. 8 shows a part in the manufacturing method for having used the semiconductor device of cutting die bonding film of the invention
Process.
Fig. 9 is shown in the variation for the manufacturing method of semiconductor device for having used cutting die bonding film of the invention
A part of process.
Figure 10 shows the variation for having used the manufacturing method of semiconductor device of cutting die bonding film of the invention
In a part of process.
Figure 11 shows the variation for having used the manufacturing method of semiconductor device of cutting die bonding film of the invention
In a part of process.
Figure 12 shows the variation for having used the manufacturing method of semiconductor device of cutting die bonding film of the invention
In a part of process.
Description of symbols
1 cutting belt
11 substrates
12 adhesive phases
2,21 die bonding film
3 cutting die bonding films
W, 30A semiconductor crystal wafer
30B semiconductor crystal wafer dividing body
30a slot segmentation
30b modification area
31 semiconductor chips
Specific embodiment
[cutting belt]
The adhesive phase that cutting belt of the invention has substrate and is layered on above-mentioned substrate.Below to cutting of the invention
One embodiment of band (cutting sheet) is illustrated.Fig. 1 is the section for showing an embodiment of cutting belt of the invention
Schematic diagram.
As shown in Figure 1, the adhesive phase 12 that cutting belt 1 has substrate 11 and is layered on substrate 11.
Cutting belt 1 as described above, at least one direction, under the conditions of 23 DEG C of temperature carry out 30% stretch 1000 seconds it
Stress relaxation rate afterwards be 45% or more, preferably 50% or more, more preferably 55% or more, further preferably 60% with
On.By making above-mentioned 45% or more stress relaxation rate, the stress generated in room temperature extension is reduced in early stage, therefore, normal
It can inhibit when temperature extension and as much as possible the stress applied in the bottom surface of the semiconductor chip with die bonding film later.
Therefore, it using the semiconductor chip of circuit layer multiple stratification, is not susceptible in room temperature extension and also float later
It rises.The upper limit of above-mentioned stress relaxation rate is not particularly limited, therefore the more big more early reduction of then residual stress is not susceptible to have
The semiconductor chip of die bonding film floats, and is preferred.It should be noted that in this specification, sometimes by it is above-mentioned " extremely
A few direction, carry out under the conditions of 23 DEG C of temperature 30% and stretch 1000 seconds after stress relaxation rate " be referred to as " stress
Relaxation rate ".
Above-mentioned stress relaxation rate be at least one direction, under the conditions of 23 DEG C of temperature carry out 30% stretch up to
The ratio of stress value when the reduction amount of stress value after 1000 seconds is stretched relative to carry out 30%.Above-mentioned stress relaxation rate is logical
The calculation method for crossing following stress relaxation rates is found out.
The calculation method > of < stress relaxation rate
Length 140mm × width 20mm is cut into as length direction at least one direction from cutting belt 1 using substrate 11,
Obtain strip test film.By the strip test film under 23 DEG C, the atmosphere of 50%RH, between Initial grip distance 100mm,
Tensile speed 100mm/ minutes lower using cupping machine to be stretched (elongation) until elongation is 30%, is then stopped, survey
Surely the stress value of the range including being risen until after 1000 seconds comprising self-stopping technology.Then, stress value when carry out 30% being stretched
While stopping (stretch stress value) stopped as A, using self stretch 1000 seconds after stress value as B, found out by following formula.
Stress relaxation rate (%)=(A-B)/A × 100
Cutting belt 1 is as described above, at least one above-mentioned direction (that is, direction that above-mentioned stress relaxation rate is 45% or more)
, under the conditions of 23 DEG C of temperature carry out 30% stretch 1000 seconds after stress value be 4MPa or less, preferably 3.8MPa with
Under, more preferably 3.5MPa or less.The lower limit of above-mentioned stress value is 0MPa, and more low then residual stress is smaller, is more not susceptible to band
There is floating for the semiconductor chip of die bonding film, so it is preferred that.Above-mentioned stress value computationally states the mistake of stress relaxation rate
It is obtained in journey.It should be noted that in this specification, sometimes by least one direction, carry out under the conditions of 23 DEG C of temperature
Stress value after 30% stretching 1000 seconds is known as " stress value after 30% stretching 1000 seconds ".
It should be noted that above-mentioned stress relaxation rate and it is above-mentioned 30% stretch 1000 seconds after stress value in cutting belt 1
At least one direction difference is within the above range.In addition, the direction of above-mentioned stress relaxation rate within the above range with
The direction of stress value within the above range after above-mentioned 30% stretching 1000 seconds is identical direction.At least one above-mentioned side
To the preferably direction MD.It should be noted that the direction MD of cutting belt 1 is direction identical with the direction MD of substrate 11.
When the initial elastic modulus of aftermentioned die bonding film 2 is high, cutting belt 1 is not particularly limited, and above-mentioned at least one
It is a direction (that is, direction that above-mentioned stress relaxation rate is 45% or more), when 23 DEG C of temperature conditions carry out 30% stretching
Stress value (stress value when above-mentioned 30% stretching) is preferably 5MPa or more, more preferably 6.5MPa or more, is more preferably
8MPa or more.The upper limit of above-mentioned stress value is such as 30MPa, preferably 20MPa, more preferably 15MPa.Above-mentioned stress value is
When 5MPa or more, in cooling extension, semiconductor crystal wafer, cutting off for die bonding film are become easier to.Above-mentioned stress value is being counted
It counts in obtaining during stating stress relaxation rate.It should be noted that when the initial elastic modulus of die bonding film 2 is low, on
5MPa can be less than by stating stress value when 30% stretching.
When the initial elastic modulus of aftermentioned die bonding film 2 is high, cutting belt 1 is not particularly limited, and above-mentioned at least one
Stress value and above-mentioned 30% when a direction (that is, direction that above-mentioned stress relaxation rate is 45% or more), above-mentioned 30% stretching
The difference [(stress value when 30% stretching)-(stress value after 30% stretching 1000 seconds)] of stress value after stretching 1000 seconds is preferably
For 5MPa or more, more preferably 5.5MPa or more, further preferably 6MPa or more.The difference of above-mentioned stress value is 5MPa or more
When, in room temperature extension, the stress that generates is reduced in early stage, therefore, can be inhibited as much as possible in room temperature extension and later
The stress that semiconductor chip bottom surface with die bonding film applies, in the semiconductor chip using circuit layer multiple stratification
In the case of, it is less susceptible in room temperature extension and also float later.The upper limit of the difference of above-mentioned stress value is not particularly limited, more
Therefore the more early reduction of big then residual stress is more not susceptible to floating for the semiconductor chip with die bonding film, is preferred
, such as can be 20MPa, 15MPa, 10MPa.It should be noted that when the initial elastic modulus of die bonding film 2 is low,
The difference of above-mentioned stress value can be less than 5MPa.
Cutting belt 1 is not particularly limited, at least one direction (direction that preferably above-mentioned stress relaxation rate is 45% or more)
, the tensile strength when 0 DEG C of at least one temperature condition below drop-down stretches 100% be preferably 10N/10mm or more, more preferably
For 12N/10mm or more.When above-mentioned tensile strength is 10N/10mm or more, the stress applied in cooling extension is effectively passed
Reach the modification area of semiconductor crystal wafer, the part of die bonding film to be cut off, cutting off face easily becomes more evenly, and
And it in room temperature extension and can be less susceptible to that floating for the semiconductor chip with die bonding film occurs later.
Cutting belt 1 is not particularly limited, a preferably at least direction (side that preferably above-mentioned stress relaxation rate is 45% or more
To) there is heat-shrinkable.When cutting belt 1 has heat-shrinkable, the outer peripheral portion of semiconductor crystal wafer can be made in room temperature extension
It is heat-shrinked, thereby, it is possible to the shapes to have widened the mutual interval of the semiconductor chip with die bonding film after singualtion
State is fixed, and therefore, can easily be done the pickup of semiconductor chip.
(substrate)
Substrate 11 is the element to play a role in cutting belt 1, aftermentioned cutting die bonding film 3 as supporting mass.
If the above-mentioned stress relaxation rate of above-mentioned 11 cutting belt 1 of substrate and it is above-mentioned 30% stretch 1000 seconds after stress value in specific model
It is just not particularly limited in enclosing.As above-mentioned base material 11, such as plastic basis material (especially plastic film) can be enumerated.It is above-mentioned
Substrate 11 is also possible to the laminated body of substrate or xenogenesis substrate of the same race either single layer.
As the resin for constituting above-mentioned plastic basis material, it can be mentioned, for example: low density polyethylene (LDPE), straight-chain low density polyethylene
Alkene, medium density polyethylene, high density polyethylene (HDPE), ultra-low density polyethylene, atactic copolymerized polypropene, block copolymerization polypropylene,
Poly- polypropylene, polybutene, polymethylpentene, vinyl-vinyl acetate copolymer (EVA), ionomer, ethylene-(methyl) propylene
Acid copolymer, ethylene-(methyl) acrylate (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene co-polymers
Equal polyolefin resins；Polyurethane；Polyethylene terephthalate (PET), polyethylene naphthalate, poly terephthalic acid
The polyester such as butanediol ester (PBT)；Polycarbonate；Polyimides；Polyether-ether-ketone；Polyetherimide；Aromatic polyamides, all aromatic
The polyamide such as polyamide；Polyphenylene sulfide；Fluororesin；Polyvinyl chloride；Vingon；Celluosic resin；Organic siliconresin etc..On
One kind can be both used only by stating resin, also can be used two or more.When adhesive phase 12 is radiation curable as described later,
Preferred substrates 11 have radiation transmittance.
When substrate 11 is plastic film, above-mentioned plastic film both can also be along at least one direction with No yield point
(axis direction, two axis directions etc.) orientation.When being orientated along at least one direction, plastic film can along this at least one
Direction is heat-shrinked.When with heat-shrinkable, the outer peripheral portion of the semiconductor crystal wafer of cutting belt 1 can be made to be heat-shrinked, thus, it is possible to
It is enough to be fixed with the state for having widened the mutual interval of the semiconductor chip with die bonding film after singualtion, therefore
It can easily be done the pickup of semiconductor chip.It is excellent in order to make substrate 11 and cutting belt 1 that there is isotropic heat-shrinkable
Selecting substrate 11 is two axis oriented films.It should be noted that the above-mentioned plastic film being orientated along at least one direction can be with
It is obtained and the plastic film of tensionless winkler foundation is stretched (axis stretching, Biaxially stretched etc.) along at least one direction.
Substrate 11 and cutting belt 1 are in the heat treatment test carried out with 100 DEG C of heating temperature and 60 seconds conditions of heating treatment time
Percent thermal shrinkage be preferably 1~30%, more preferably 2~25%, further preferably 3~20%, particularly preferably 5~
20%.Above-mentioned percent thermal shrinkage is preferably the percent thermal shrinkage in the direction MD and at least one direction in the direction TD.
For the purpose of improving with the adaptation of adhesive phase 12, retentivity, 12 side surface of adhesive phase of substrate 11 can
To implement such as Corona discharge Treatment, corona treatment, frosted working process, ozone exposure processing, fire exposure processing, height
Piezoelectricity hits the physical treatments such as exposure treatment, ionization radial line processing；The chemical treatments such as chromic acid processing；It utilizes smears (silane coupling agent)
Easy bonding processing etc. surface treatment.In addition, in order to assign antistatic effect, can 11 surface of substrate be arranged containing metal,
Alloy, they oxide etc. electric conductivity vapor deposition layer.
Substrate 11 is not particularly limited, at least one above-mentioned direction is (that is, the stress relaxation rate of cutting belt 1 is 45% or more
Direction), under the conditions of 23 DEG C of temperature carry out 30% stretch 1000 seconds after stress relaxation rate be preferably 45% or more,
It more preferably 50% or more, is more preferably 55% or more, particularly preferably 60% or more.The stress relaxation of above-mentioned substrate 11
Rate be 45% or more when, be easy to make 45% or more the stress relaxation rate of cutting belt 1, be less susceptible to occur room temperature extend when and later
Semiconductor chip with die bonding film float.The upper limit of the stress relaxation rate of above-mentioned substrate 11 does not limit especially
Fixed, the residual stress of more big then cutting belt 1 is easier to be reduced in early stage, therefore, is less susceptible to occur with die bonding film
Semiconductor chip floats, and is preferred.It should be noted that the stress relaxation rate of above-mentioned substrate 11 and above-mentioned cutting belt 1
Stress relaxation rate is it is also possible to by measuring stress value using substrate 11 instead of cutting belt 1 to calculate.
Substrate 11 is not particularly limited, at least one above-mentioned direction is (that is, the stress relaxation rate of cutting belt 1 is 45% or more
Direction), under the conditions of 23 DEG C of temperature carry out 30% stretch 1000 seconds after stress value be preferably 4MPa hereinafter, more excellent
It is selected as 3.8MPa or less, further preferably 3.5MPa or less.When above-mentioned stress value is 4MPa or less, it is easy to make cutting belt 1
30% stretch after stress value be 4MPa hereinafter, when being less susceptible to occur room temperature extension and half with die bonding film later
Conductor chip floats.The lower limit of above-mentioned stress value is 0MPa, and the residual stress of more low then cutting belt 1 is smaller, is more not susceptible to
Semiconductor chip with die bonding film floats, so it is preferred that.Above-mentioned stress value computationally states the stress of substrate 11
It is obtained during relaxation rate.
When the initial elastic modulus of aftermentioned die bonding film 2 is high, substrate 11 is not particularly limited, it is above-mentioned at least one
Direction (that is, the stress relaxation rate of cutting belt 1 be 45% or more direction), 23 DEG C temperature conditions carry out 30% stretch when
Stress value while stretching (30% stress value) be preferably 5MPa or more, more preferably 6.5MPa or more, further preferably
8MPa or more.The upper limit of above-mentioned stress value is such as 30MPa, preferably 20MPa, more preferably 15MPa.Above-mentioned stress value is
When 5MPa or more, it is easy to make the stress value 5MPa or more when 30% stretching of cutting belt 1, the semiconductor die in cooling extension
Circle, cutting off for die bonding film become easier to.Above-mentioned stress value computationally states the process of the stress relaxation rate of substrate 11
In obtain.It should be noted that above-mentioned stress value can be less than 5MPa when the initial elastic modulus of die bonding film 2 is low.
When the initial elastic modulus of aftermentioned die bonding film 2 is high, substrate 11 is not particularly limited, it is above-mentioned at least one
Stress value when the 30% of direction (that is, direction that the stress relaxation rate of cutting belt 1 is 45% or more), above-mentioned substrate 11 stretches
[(stress value when 30% stretching)-(30% stretches 1000 to the difference of stress value after stretching 1000 seconds with the 30% of above-mentioned substrate 11
Stress value after second)] it is preferably 5MPa or more, more preferably 5.5MPa or more, further preferably 6MPa or more.Above-mentioned stress
It when the difference of value is 5MPa or more, is easy to make the difference 5MPa or more of the above-mentioned stress value of cutting belt 1, be generated in room temperature extension
Stress is reduced in early stage, therefore, can inhibit in room temperature extension and as much as possible having the half of die bonding film later
The stress that conductor chip bottom surface applies, using the semiconductor chip of circuit layer multiple stratification, in room temperature extension
And it is also less susceptible to float later.The upper limit of the difference of above-mentioned stress value is not particularly limited, more big, and residual stress is more early to be subtracted
It is few, therefore be more not susceptible to floating for the semiconductor chip with die bonding film, be it is preferred, can for such as 20MPa,
15MPa,10MPa.It should be noted that the difference of above-mentioned stress value can be small when the initial elastic modulus of die bonding film 2 is low
In 5MPa.
The thickness of substrate 11 is not particularly limited, be such as 5 μm or more, preferably 40 μm or more, be more preferably 50 μm with
Above, further preferably 55 μm or more, particularly preferably 60 μm or more.The upper limit of above-mentioned thickness is such as 200 μm, is preferably
180 μm, more preferably 150 μm.Stress value after the above-mentioned stress relaxation rate for making cutting belt 1 and above-mentioned 30% stretch 1000 seconds
Make on the basis of in a specific range the thickness of substrate 11 within the above range when, room temperature extension when stress be easy equably
It is applied to the semiconductor core on piece with die bonding film, is not easy unevenly to generate and therefore residual stress expands in room temperature
It is less susceptible to when exhibition and later that floating for the semiconductor chip with die bonding film occurs.
(adhesive phase)
If the above-mentioned stress relaxation rate of 12 cutting belt 1 of adhesive phase and it is above-mentioned 30% stretch 1000 seconds after stress value exist
It is just not particularly limited in specific range, known or usual adhesive phase can be used.
Adhesive phase 12 is not particularly limited, and the storage tensile modulus under the conditions of 23 DEG C of temperature (sometimes referred to as " stretches storage
Energy modulus (23 DEG C) ") it is preferably 1~100MPa, more preferably 2~30MPa.When above-mentioned storage tensile modulus is 1MPa or more,
It can be easier to pick up the semiconductor chip for having die bonding film when picking up.Above-mentioned storage tensile modulus be 100MPa with
When lower, after cooling extend until during pickup, it can be less susceptible to occur the semiconductor chip with die bonding film certainly
Cutting belt 1 floats.
Adhesive phase 12 is not particularly limited, and storage tensile modulus under the conditions of -15 DEG C of temperature (sometimes referred to as " is drawn
Stretch storage modulus (- 15 DEG C) ") it is preferably 5~500MPa, more preferably 10~200MPa.Above-mentioned storage tensile modulus is 5MPa
When above, when cutting off stress effectively can be transmitted by die bonding film in semiconductor crystal wafer, die bonding film.On
It when to state storage tensile modulus be 500MPa or less, can be less susceptible to that partly leading with die bonding film occurs in cooling extension
Body chip Self cleavage band 1 floats.
The ratio of the above-mentioned storage tensile modulus (- 15 DEG C) of adhesive phase 12 and above-mentioned storage tensile modulus (23 DEG C) [(stretches
Storage modulus (- 15 DEG C))/(storage tensile modulus (23 DEG C))] be not particularly limited, preferably 2 or more, more preferably 4 or more.
When above-mentioned ratio is 2 or more, die bonding film Self cleavage band 1 can be further suppressed in cooling extension and is floated, also, is being picked up
More easily the semiconductor chip with die bonding film can be removed from cutting belt 1 when taking.In addition, it is above-mentioned than more big more
It is preferred that being such as 100 or less from the viewpoint of the balance for the easness for picking up and cutting off.
Above-mentioned storage tensile modulus (23 DEG C) and (- 15 DEG C) of the above-mentioned storage tensile modulus following storage tensile modulus of utilization
Measuring method be measured and obtain.
The measuring method > of < storage tensile modulus
Using 200 μm of thickness, length 40mm (measured length), width 10mm adhesive phase as test film, use solid
Determination of viscoelasticity device between frequency 1Hz, 10 DEG C/min of heating rate, Initial grip under conditions of distance 22.5mm comprising
23 DEG C and -15 DEG C of temperature range measures storage tensile modulus.The value at 23 DEG C and -15 DEG C at this time is read, respectively as drawing
Stretch storage modulus (23 DEG C), storage tensile modulus (- 15 DEG C).
As the adhesive for forming adhesive phase 12, either can be by illumination radiation line, heating etc. from outside
Effect intentionally reduce bonding force adhesive (bonding force reduction type adhesive), be also possible to bonding force nearly or completely not
Because of the adhesive (the non-reduced type adhesive of bonding force) reduced from external effect, chip engagement can be cut according to using
Film 3 carries out the suitable selections such as method, the condition of singualtion of semiconductor crystal wafer of singualtion.
When using bonding force reduction type adhesive as above-mentioned adhesive, in the manufacture of cutting die bonding film 3
In journey, use process, it can distinguish and show the state of relatively high bonding force using adhesive phase 12 and show relatively low glue
The state of resultant force.For example, being bonded chip in the adhesive phase 12 of cutting belt 1 in the manufacturing process of cutting die bonding film 3
When bonding film 2, when cutting die bonding film 3 is used for cutting action, relatively high bonding is shown using adhesive phase 12
The state of power is able to suppress, prevents the adherends such as die bonding film 2 from floating from adhesive phase 12, on the other hand, hereafter
For being picked up in the pickup process for having the semiconductor chip of die bonding film from the cutting belt 1 of cutting die bonding film 3,
By reducing the bonding force of adhesive phase 12, pickup can easily be done.
As such bonding force reduction type adhesive, it can be mentioned, for example: Radiation curing adhesive (has radiation
The adhesive of curability), thermal expansion type adhesive etc..As the adhesive for forming adhesive phase 12, one kind both can be used
Two or more bonding force reduction type adhesives also can be used in bonding force reduction type adhesive.In addition, either adhesive phase
12 entirety is formed by bonding force reduction type adhesive, is also possible to part and is formed by bonding force reduction type adhesive.For example, working as
When adhesive phase 12 has single layer structure, either the entirety of adhesive phase 12 is formed by bonding force reduction type adhesive,
The predetermined portion (such as the middle section in the pasted objects region as semiconductor crystal wafer) in adhesive phase 12 be can be by gluing
Resultant force reduction type adhesive formed, (such as the centrally located region in the pasted objects region as wafer central is outer at other positions
The region of side) it is formed by the non-reduced type adhesive of bonding force.
As above-mentioned Radiation curing adhesive, can be used for example through irradiating electron beam, ultraviolet light, alpha ray, β
Ray, gamma-rays or X-ray carry out the adhesive of cured type, particularly preferably cured using being carried out by irradiation ultraviolet light
The adhesive (ultraviolet-curing adhesive) of type.
As above-mentioned Radiation curing adhesive, it can be mentioned, for example: contain the base polymers such as acrylic polymer
Add with the monomer component of the radiation polymerism of the functional groups such as carbon-to-carbon double bond with radiation polymerism, oligomer ingredient
Adding type Radiation curing adhesive.
Above-mentioned acrylic polymer be containing from acrylic monomer (in molecule with (methyl) acryloyl group list
Body ingredient) monomeric unit as polymer monomeric unit polymer.Above-mentioned acrylic polymer preferably includes to come
The polymer of the main monomer unit most as mass ratio from the monomeric unit of (methyl) acrylate.It needs to illustrate
It is that acrylic polymer can both be used only a kind of or can be used two or more.In addition, in the present specification, " (methyl)
Acrylic acid " expression " acrylic acid " and/or " methacrylic acid " (any one of " acrylic acid " and " methacrylic acid " or both),
It is other also the same.
As above-mentioned (methyl) acrylate, it can be mentioned, for example: (methyl) alkyl acrylate, (methyl) acrylate
(methyl) acrylate containing alkyl such as base ester, (methyl) benzyl acrylate.It, can as above-mentioned (methyl) alkyl acrylate
Enumerate for example: the methyl esters of (methyl) acrylic acid, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester,
Isopentyl ester, own ester, heptyl ester, monooctyl ester, 2- ethylhexyl, different monooctyl ester, nonyl ester, last of the ten Heavenly stems ester, isodecyl ester, hendecane base ester, dodecyl
Ester, tridecane base ester, tetradecane base ester, cetyl ester, stearyl, eicosane base ester etc..As above-mentioned (methyl) third
Olefin(e) acid cycloalkyl ester, it can be mentioned, for example the ring pentyl ester of: (methyl) acrylic acid, cyclohexyls etc..As above-mentioned (methyl) acrylic acid virtue
Base ester, it can be mentioned, for example: the phenyl ester of (methyl) acrylic acid, benzyl ester.(first as the main monomer for acrylic polymer
Base) acrylate can both be used only a kind of or can be used two or more.In order to make adhesive phase 12 suitably show by
The fundamental characteristics such as (methyl) acrylate bring adhesiveness, in the whole monomer components for being used to form acrylic polymer
In, the ratio of (methyl) acrylate as main monomer is preferably 40 mass % or more, more preferably 60 mass % or more.
For improve cohesive force, heat resistance the purpose of, above-mentioned acrylic polymer can containing from can with it is above-mentioned
The monomeric unit of other monomer components of (methyl) acrylic ester copolymer.As above-mentioned other monomer components, it can be mentioned, for example: contain
The monomer of carboxyl；Anhydride monomers；The monomer of hydroxyl；Monomer containing glycidyl；Containing sulfonic monomer；Phosphorous acidic group
Monomer；The monomer etc. containing functional group such as acrylamide, acrylonitrile.As above-mentioned carboxylic monomer, it can be mentioned, for example: propylene
Acid, methacrylic acid, (methyl) carboxy ethyl acrylate, (methyl) carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, crotons
Acid etc..As above-mentioned anhydride monomers, it can be mentioned, for example: maleic anhydride, itaconic anhydride etc..It, can as the monomer of above-mentioned hydroxyl
Enumerate for example: (methyl) acrylic acid 2- hydroxyl ethyl ester, (methyl) acrylic acid 2- hydroxy propyl ester, (methyl) acrylic acid 4- hydroxybutyl,
The own ester of (methyl) acrylic acid 6- hydroxyl, (methyl) acrylic acid 8- hydroxyl monooctyl ester, (methyl) acrylic acid 10- hydroxyl last of the ten Heavenly stems ester, (methyl)
Acrylic acid 12- hydroxylauric ester, (methyl) acrylic acid (4- hydroxymethylcyclohexyl) methyl esters etc..As above-mentioned containing glycidyl
Monomer, it can be mentioned, for example: (methyl) glycidyl acrylate, (methyl) acrylic acid methylglycidyl esters etc..As above-mentioned
Containing sulfonic monomer, it can be mentioned, for example: styrene sulfonic acid, allyl sulphonic acid, 2- (methyl) acrylamide -2- methyl-prop sulphur
Acid, (methyl) acrylamide propane sulfonic acid, (methyl) acrylic acid sulphur propyl ester, (methyl) propane sulfonic acid etc..As above-mentioned
The monomer of phosphorous acidic group, it can be mentioned, for example: 2- hydroxylethyl acyl phosphate etc..Above-mentioned other monomer components both can only make
It also can be used with one kind two or more.It is viscous by (methyl) acrylate bring in order to show adhesive phase 12 suitably
The fundamental characteristics such as conjunction property, in the whole monomer components for being used to form acrylic polymer, the ratio of above-mentioned other monomer components
Example is preferably 60 mass % hereinafter, more preferably 40 mass % or less.
Above-mentioned acrylic polymer may include to form cross-linked structure in its polymer backbone and carry out self energy and make
The monomeric unit of the multi-functional monomer of the monomer components such as (methyl) acrylate for main monomer copolymerization.As above-mentioned multifunctional
Property monomer, it can be mentioned, for example: hexylene glycol two (methyl) acrylate, (poly-) ethylene glycol two (methyl) acrylate, (poly-) the third two
Alcohol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, pentaerythrite two (methyl) acrylate, trihydroxy methyl
Propane three (methyl) acrylate, pentaerythrite three (methyl) acrylate, dipentaerythritol six (methyl) acrylate, epoxy
(methyl) acrylate (such as poly- (methyl) glycidyl acrylate), polyester (methyl) acrylate, carbamate (first
Base) acrylate etc. has (methyl) acryloyl group and the monomer of other reactive functional groups etc. in the molecule.It is above-mentioned multifunctional
Property monomer can both be used only a kind of or can be used two or more.In order to show adhesive phase 12 suitably by (methyl)
The fundamental characteristics such as acrylate bring adhesiveness, it is above-mentioned in the whole monomer components for being used to form acrylic polymer
The ratio of multi-functional monomer is preferably 40 mass % hereinafter, more preferably 30 mass % or less.
Above-mentioned acrylic polymer can be by that will include more than one monomer components of acrylic monomer for polymerization
And it obtains.As polymerization, polymerisation in solution, emulsion polymerization, bulk polymerization, suspension polymerisation etc. can be enumerated.
The number-average molecular weight of above-mentioned acrylic polymer in adhesive phase 12 is preferably 100,000 or more, and more preferably 20
Ten thousand~3,000,000.When number-average molecular weight is 100,000 or more, have the tendency that the low molecular weight substance in adhesive phase is few, Neng Goujin
One step inhibits the pollution to die bonding film, semiconductor crystal wafer etc..
Above-mentioned Radiation curing adhesive can contain crosslinking agent.For example, when using acrylic polymer as base
When plinth polymer, acrylic polymer crosslinking, the low molecular weight substance being further reduced in adhesive phase 12 can be made.As
Above-mentioned crosslinking agent, it can be mentioned, for example: polyisocyanate compound, epoxide, polyol compound (polyphenol compound
Deng), aziridine cpd, melamine compound etc..When using crosslinking agent, dosage is relative to 100 matter of base polymer
Measuring part is preferably 5 mass parts or so hereinafter, more preferably 0.1~5 mass parts.
As the monomer component of above-mentioned radiation polymerism, it can be mentioned, for example: carbamate (methyl) acrylate, three
Hydroxymethyl-propane three (methyl) acrylate, pentaerythrite three (methyl) acrylate, pentaerythrite four (methyl) acrylate,
Dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol six (methyl) acrylate, two (first of 1,4- butanediol
Base) acrylate etc..As the oligomer ingredient of above-mentioned radiation polymerism, it can be mentioned, for example: carbamates, polyethers
The various oligomer such as class, polyesters, polycarbonate-based, polybutadiene, preferred molecular weight be 100~30000 or so it is oligomeric
Object ingredient.Form the monomer component of above-mentioned radiation curing in the Radiation curing adhesive of adhesive phase 12 and oligomeric
The content of object ingredient is such as 5~500 mass parts, preferably 40~150 mass relative to above-mentioned 100 mass parts of base polymer
Part or so.In addition, as addition type Radiation curing adhesive, it can be mentioned, for example: Japanese Unexamined Patent Application 60-196956 bulletin
Disclosed in addition type Radiation curing adhesive.
It as above-mentioned Radiation curing adhesive, can also enumerate: contain in polymer lateral chain, main polymer chain, gather
Close the inherent type radiation curing that owner's chain end has the base polymers of functional groups such as the carbon-to-carbon double bond of radiation polymerism
Type adhesive.When using such inherent type Radiation curing adhesive, there is following tendency: being able to suppress by low molecular weight
Ingredient is caused by the movement being formed by adhesive phase 12, the undesirable ongoing change of adhesion characteristic.
As the base polymer for including in above-mentioned inherent type Radiation curing adhesive, preferably acrylic
Object.As the above-mentioned acrylic polymer that may be included in inherent type Radiation curing adhesive, can be employed as
State the acrylic polymer for including in addition type Radiation curing adhesive and the acrylic polymer illustrated.As to
The method that the carbon-to-carbon double bond of radiation polymerism is imported in acrylic polymer, it can be mentioned, for example following methods: making containing tool
There is the starting monomer polymerization (copolymerization) of the monomer component of the 1st functional group after obtaining acrylic polymer, makes with can be with
The compound of the carbon-to-carbon double bond of the 2nd functional group and radiation polymerism of above-mentioned 1st functional group reactions is maintaining carbon-to-carbon double bond
Radiation polymerism in the state of with acrylic polymer carry out condensation reaction or addition reaction.
As the combination of above-mentioned 1st functional group and above-mentioned 2nd functional group, it can be mentioned, for example: carboxyl and epoxy group, epoxy group
With carboxyl, carboxyl and '-aziridino, '-aziridino and carboxyl, hydroxyl and isocyanate group, isocyanate group and hydroxyl etc..These
In, from the viewpoint of the easy degree of following response, the preferably combination of hydroxyl and isocyanate group, isocyanate group and hydroxyl
Combination.Wherein, the technical difficulty from polymer of the production with isocyanate group with high reactivity is high and has the third of hydroxyl
From the perspective of the easiness of production and the acquisition of olefin(e) acid quasi polymer, preferably above-mentioned 1st functional group is hydroxyl and above-mentioned 2nd official
The combination for isocyanate group can be rolled into a ball.Change as the carbon-to-carbon double bond with isocyanate group and radiation polymerism at this time
Object is closed, it can be mentioned, for example: methacryloyl isocyanate, 2- methacryloxyethyl isocyanates, isopropenyl-
Bis (alpha, alpha-dimethylbenzyl) based isocyanate etc..In addition, can enumerate as the acrylic polymer with hydroxyl containing from above-mentioned
The ethers chemical combination such as monomer, 2- hydroxyethyl vinylethers, 4- hydroxybutyl vinyl ether, the diethylene glycol monovinyl base ether of hydroxyl
The acrylic polymer of the monomeric unit of object.
Above-mentioned Radiation curing adhesive preferably comprises Photoepolymerizationinitiater initiater.As above-mentioned Photoepolymerizationinitiater initiater, can arrange
It illustrates such as: α -one alcohol compound, acetophenone compounds, benzoin ethers compound, ketal compounds, aromatic sulfonyl
Chlorine class compound, photolytic activity oxime compound, benzophenone compound, thioxanthene ketone class compound, camphorquinone, halogenated ketone, acyl
Base phosphine oxide, acyl phosphonate etc..As above-mentioned α -one alcohol compound, it can be mentioned, for example: 4- (2- hydroxyl-oxethyl) phenyl
(2- hydroxyl -2- propyl) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, 2- methyl -2- hydroxypropiophenonepreparation, 1- hydroxy-cyclohexyl benzene
Base ketone etc..As above-mentioned acetophenone compounds, it can be mentioned, for example: methoxyacetophenone, 2,2- dimethoxy -2- phenyl benzene second
Ketone, 2,2- diethoxy acetophenone, 2- methyl-1-[4- (methyl mercapto)-phenyl]-2- morpholino propane-1 etc..As above-mentioned benzene
Acyloin ethers compound, it can be mentioned, for example: benzoin ethyl ether, benzoin iso-propylether, anisoin methyl ether etc..As above-mentioned ketal
Class compound, it can be mentioned, for example: benzil dimethyl ketal etc..As above-mentioned aromatic sulfonyl class compound, example can be enumerated
Such as: 2- naphthalene sulfonyl chloride.As above-mentioned photolytic activity oxime compound, it can be mentioned, for example: 1- phenyl -1,2- propanedione -2- (O- second
Epoxide carbonyl) oxime etc..As above-mentioned benzophenone compound, it can be mentioned, for example: benzophenone, benzoyl benzoic acid, 3,
3 '-dimethyl -4- methoxy benzophenones etc..As above-mentioned thioxanthene ketone class compound, it can be mentioned, for example: thioxanthones, 2- diuril
Ton ketone, 2- methyl thioxanthones, 2,4- dimethyl thioxanthone, isopropyl thioxanthone, bis- clopenthixal ketone of 2,4-, 2,4- diethyl thioxanthene
Ketone, 2,4- diisopropylthioxanthone etc..The content of Photoepolymerizationinitiater initiater in Radiation curing adhesive is poly- relative to basis
Conjunction 100 mass parts of object are such as 0.05~20 mass parts.
Above-mentioned thermal expansion type adhesive is that (foaming agent, thermal expansivity are micro- containing the ingredient by heating foaming, expansion
Ball etc.) adhesive.As above-mentioned foaming agent, various inorganic foaming agents, organic foaming agent can be enumerated.As above-mentioned inorganic
Class foaming agent, it can be mentioned, for example: ammonium carbonate, ammonium hydrogen carbonate, sodium bicarbonate, ammonium nilrite, sodium borohydride, Azide species etc..
As above-mentioned organic foaming agent, it can be mentioned, for example: the chlorine fluoric ether such as F-11, Dichloromonofluoromethane；Azo is double
The azo compounds such as isobutyronitrile, azodicarbonamide, Barium azodicarboxylate；Unifor, diphenyl sulfone -3,3 '-two
The hydrazine class compounds such as the double sulfohydrazides of sulfohydrazide, 4,4 '-oxobenzenesulfonyl hydrazide, allyl；P-toluenesulfonyl semicarbazides, 4,
The amino carbamide compounds such as 4 '-oxos bis- (benzenesulfonylamino ureas)；The triazole types chemical combination such as 5- morpholinyl -1,2,3,4- thiatriazole
Object；N, N '-dinitrosopentamethylene tetramine, N, the N- nitroso such as N '-dimethyl-N, N '-dinitrosoterephthalamine
Class compound etc..As above-mentioned heat-expandable microsphere, it can be mentioned, for example be surrounded by be easy gasification by heating in being configured in shell
The microballoon of the substance of expansion.Be easy gasification and the substance that expands as above by heating, it can be mentioned, for example: iso-butane, propane,
Pentane etc..By using coacervation, interfacial polymerization etc. will by heating be easy gasification expansion substance in packet to hull shape at
In substance, so as to make heat-expandable microsphere.As above-mentioned shell forming material, the object of display hot melt property can be used
Matter, the substance that can be ruptured by the thermal expansion of interior packet substance.As this substance, it can be mentioned, for example: vinylidene chloride
Acrylonitrile copolymer, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, Vingon, gathers polyvinyl alcohol
Sulfone etc..
As the non-reduced type adhesive of above-mentioned bonding force, it can be mentioned, for example: make bonding by preparatory illumination radiation line
Adhesive and Pressuresensitive Adhesive of the form that the Radiation curing adhesive recorded in power reduction type adhesive has cured etc..
As the adhesive for forming adhesive phase 12, a kind of non-reduced type adhesive of bonding force both can be used, also can be used two kinds
The above non-reduced type adhesive of bonding force.In addition, either the entirety of adhesive phase 12 is by the non-reduced type adhesive of bonding force
It is formed, is also possible to part and is formed by the non-reduced type adhesive of bonding force.For example, when adhesive phase 12 has single layer structure,
Either the entirety of adhesive phase 12 is formed by the non-reduced type adhesive of bonding force, the regulation being also possible in adhesive phase 12
Position (such as the region in the outside in the centrally located region in the pasted objects region as wafer central) is by the non-reduced type of bonding force
Adhesive formation, other positions (such as the middle section in the pasted objects region as semiconductor crystal wafer) reduce type by bonding force
Adhesive is formed.In addition, when adhesive phase 12 has stepped construction, either whole adhesive phases in stepped construction by
The non-reduced type adhesive of bonding force is formed, and is also possible to the part adhesive layer in stepped construction by the non-reduced type adhesive of bonding force
It is formed.
Pass through the adhesive (spoke after illumination radiation line for the form that preparatory illumination radiation line has cured curing adhesive
Ray curing adhesive) although being reduced by illumination radiation line bonding force, but still show due to contained polymer
The adhesiveness of ingredient can play the bonding force of bottom line required for the adhesive phase of cutting belt in cutting action etc..
When using the Radiation curing adhesive after illumination radiation line, in the face extending direction of adhesive phase 12, either
The entirety of adhesive phase 12 is formed by the Radiation curing adhesive after illumination radiation line, is also possible to the office of adhesive phase 12
Portion formed by the Radiation curing adhesive after illumination radiation line and other parts by non-illumination radiation line radiation curing
Type adhesive is formed.
As above-mentioned Pressuresensitive Adhesive, can be used the adhesive of known or usual pressure sensitive it is preferable to use
It take acrylic polymer as acrylic adhesives, the rubber adhesive of basic polymer.When adhesive phase 12 contains third
When olefin(e) acid quasi polymer is as Pressuresensitive Adhesive, which is preferably to contain from (methyl) acrylate
The polymer of the monomeric unit main monomer unit most as mass ratio.As above-mentioned acrylic polymer, can adopt
Use for example as the acrylic polymer for including in above-mentioned addition type Radiation curing adhesive and the acrylic compounds illustrated
Polymer.
Adhesive phase 12 or the adhesive for forming adhesive phase 12 can also be compounded crosslinking other than above-mentioned each ingredient and promote
Into known in agent, tackifier, anti-aging agent, colorant (pigment, dyestuff etc.) etc. or the usual additive for adhesive phase.As
Above-mentioned colorant, it can be mentioned, for example the compounds that coloring is generated by illumination radiation line.Pass through illumination radiation line when containing
When generating the compound of coloring, can only it make by the colored parts of irradiation with radiation.It is generated above by illumination radiation line
The compound of color is before illumination radiation line be it is colourless or light, become coloured compound by illumination radiation line, such as
Leuco dye etc. can be enumerated.The dosage for generating the compound of coloring above by illumination radiation line is not particularly limited, it can
To be suitable for selection.
The thickness of adhesive phase 12 is not particularly limited, thin from notch and the chip engagement for preventing semiconductor chip section
The viewpoints such as fixed property taken into account kept of film consider, preferably 1~50 μm or so, more preferably 2~30 μm, further preferably
5~25 μm.
The cutting belt 1 of an embodiment as cutting belt of the invention is for example such as got off manufacture.Firstly, substrate 11 can
To be film-made to obtain using known or usual film-forming method.It as above-mentioned film-forming method, such as can enumerate: calendering film
Inflation extrusion molding in casting method, enclosed system, T mould extrusion molding, coetrusion, dry lamination method in method, organic solvent etc..
Then, on substrate 11 coating containing formed adhesive and solvent of adhesive phase 12 etc., be used to form bonding
The composition (adhesive composition) of oxidant layer and after forming coated film, make the coated film as desired by desolventizing, solidification etc.
Solidification, can form adhesive phase 12.It as the method for above-mentioned coating, such as can enumerate: roller coating, silk screen coating, rotogravure application
Deng known or usual coating method.In addition, as desolventizing condition, such as in 80~150 DEG C of temperature, 0.5~5 minute time
In the range of carry out.In addition, on slider coating adhesive composition and after forming coated film, can be with above-mentioned desolventizing item
Part makes coated film be solidified to form adhesive phase 12.Then, adhesive phase 12 is fitted on substrate 11 together with slider.
Adhesive phase 12 is the adhesive phase (Radiation curing adhesive formed by above-mentioned Radiation curing adhesive
Layer) when, after aftermentioned die bonding film 2 is laminated, ultraviolet light israds can be irradiated to adhesive phase 12.By such as
The upper illumination radiation line, can be arranged on adhesive phase 12 and (first pass through irradiation spoke in advance by the non-reduced type adhesive of bonding force
Ray makes the adhesive that Radiation curing adhesive has cured) formed part.
[cutting die bonding film]
By the way that die bonding film is laminated on the adhesive phase of cutting belt of the invention, can obtain having of the invention
The cutting die bonding film of cutting belt and the die bonding film being layered on the adhesive phase of cutting belt of the invention is (sometimes
Referred to as " cutting die bonding film of the invention ").It should be noted that the chip in cutting die bonding film of the invention
Bonding film can be cut off by applying tensile stress, preferably be cut off by application tensile stress to use.
An embodiment of cutting die bonding film of the invention is illustrated below.Fig. 2 is to show the present invention
Cutting die bonding film an embodiment schematic cross-section.
As shown in Fig. 2, cutting die bonding film 3 has cutting belt 1 and is layered on the adhesive phase 12 of cutting belt 1
Die bonding film 2.It should be noted that adhesive phase 12 shown in Fig. 2 is radiation-curable adhesive layer.Adhesive phase
12 part 12a corresponding with semiconductor crystal wafer adhesive portion is (to be passed through by the region that the non-reduced type adhesive of bonding force is formed
Illumination radiation line and the degree of cross linking increase, the region that bonding force reduces), it is had differences with the bonding force of other parts 12b.By
This, can by above-mentioned part 12b by die bonding film 2 by the fully closely sealed fixation of the semiconductor crystal wafer before cutting, and
And since the closing force of above-mentioned part 12a reduces, die bonding film can be easily picked up after cutting off with chip
The semiconductor chip of bonding film.
In adhesive phase 12, above-mentioned part 12b is the region formed by bonding force reduction type adhesive, is engaged with chip thin
Film 2 is closely sealed, it can be ensured that retentivity when cutting.Radiation-curable adhesive layer can make both closely sealed and removings as a result,
Balance supports the die bonding film 2 for semiconductor chip chip to be engaged in the adherends such as substrate well.Shown in Fig. 2
Cutting die bonding film 3 adhesive phase 12 in, wafer central can be fixed on above-mentioned part 12b.Above-mentioned part 12a can
To be arranged to the area more slightly smaller than die bonding film 2 as shown in Figure 2, also can be set into closely sealed with die bonding film 2
Whole region.
It should be noted that in present embodiment, to above-mentioned in the presence of not covered by die bonding film 2 in cutting belt 1
The case where part 12b, is illustrated, but cutting die bonding film of the invention is not limited to the example, can also be cut with covering
It cuts and die bonding film is laminated in cutting belt with whole mode.In addition, on the adhesive phase 12 of cutting die bonding film 3
It is provided with the above-mentioned part 12a for the having carried out irradiation with radiation and above-mentioned part 12b for not carrying out irradiation with radiation, but of the invention
Cutting die bonding film is not limited to the example, can be adhesive phase without irradiation with radiation, or can be adhesive
The whole region of layer has carried out irradiation with radiation.When carrying out irradiation with radiation to adhesive phase 12, irradiation with radiation can be in core
It carries out, can also be carried out after stacking before the stacking of chip bonding film 2.Adhesive phase 12 in die bonding film 3 is cut to carry out
When irradiation with radiation, do not need to carry out when picking up the semiconductor chip for having die bonding film after the cutting of semiconductor crystal wafer
Irradiation with radiation can cut down the process for carrying out irradiation with radiation in semiconductor chip manufacture.
(die bonding film)
Die bonding film 2 has the structure that can be worked as the bonding agent for the Thermocurable for showing chip engagement
At.In the present embodiment, the bonding agent of die bonding film 2 and composition die bonding film 2 can both contain Thermocurable
Resin and for example as the thermoplastic resin of Binder Composition, can also contain the thermoplastic resin with Thermocurable functional group
Rouge, the Thermocurable functional group can react with curing agent and generate key.When the bonding agent for constituting die bonding film 2 includes
When thermoplastic resin with Thermocurable functional group, which need not include heat-curing resin (epoxy resin etc.).Core
Chip bonding film 2 both can have single layer structure or can have multilayered structure.
It, can as the heat-curing resin when die bonding film 2 contains heat-curing resin together with thermoplastic resin
It enumerates for example: epoxy resin, phenolic resin, amino resins, unsaturated polyester resin, polyurethane resin, organic siliconresin, thermosetting
The property changed polyimide resin etc..Above-mentioned heat-curing resin can both be used only a kind of or can be used two or more.From having
The reasons why may result in the poor tendency of the chip coalesced object i.e. ionic impurity of semiconductor chip corrosion etc. is set out,
As above-mentioned heat-curing resin, preferred epoxy.In addition, the curing agent as epoxy resin, preferably phenolic resin.
As above-mentioned epoxy resin, it can be mentioned, for example: bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenation
Bisphenol A-type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol novolak type, ortho cresol novolak type, three hydroxyphenyl first
Alkane type, four (phenyl hydroxyl) ethane (Tetraphenylolethane) types, hydantoins type, triglycidyl isocyanurate
Type, epoxy resin of glycidic amine type etc..Wherein preferred phenolic resin varnish type epoxy resin, biphenyl type epoxy resin, three oxybenzenes
Methylmethane type epoxy resin, four (phenyl hydroxyl) ethane type epoxy resin, this is because them and the phenolic aldehyde tree as curing agent
Rouge is imbued with reactivity and excellent heat resistance.
For the phenolic resin that can be played a role as the curing agent of epoxy resin, it can be mentioned, for example: phenolic varnish type phenol
Urea formaldehyde, gathers to polyoxies styrene such as oxygen styrene etc. resol type phenol resin.As novolak phenolics, can arrange
It illustrates such as: phenol resol resins, phenol aralkyl resin, cresol novolac resin, t-butylphenol novolac tree
Rouge, nonyl phenol novolac resin etc..Above-mentioned phenolic resin can both be used only a kind of or can be used two or more.Its
In, from the connection reliability with raising bonding agent when being used as the curing agent as the epoxy resin of chip engagement bonding agent
Tendency from the perspective of, preferably phenol resol resins, phenol aralkyl resin.
In die bonding film 2, from the viewpoint of carrying out the curing reaction of epoxy resin and phenolic resin sufficiently, with
Hydroxyl in phenolic resin is set to reach preferably 0.5~2.0 equivalent, more excellent relative to 1 equivalent of epoxy group in epoxy resin ingredient
The amount of 0.8~1.2 equivalent is selected to include the phenolic resin.
When die bonding film 2 contains heat-curing resin, about the content ratio of above-mentioned heat-curing resin, from making core
From the perspective of chip bonding film 2 suitably shows the function as heat curable adhesive, relative to die bonding film 2
Gross mass be preferably 5~60 mass %, more preferably 10~50 mass %.
As above-mentioned thermoplastic resin, it can be mentioned, for example: natural rubber, butyl rubber, isoprene rubber, neoprene rubber
Glue, vinyl-vinyl acetate copolymer, ethylene-acrylic acid copolymer, vinyl-acrylate copolymer, polybutadiene,
The polyamides such as polycarbonate resin, thermoplastic polyimide resin, 6- nylon, 6,6- nylon；Phenoxy resin, acrylic acid
The saturated polyester resins such as resinoid, PET, PBT；Polyamide-imide resin, fluororesin etc..Above-mentioned thermoplastic resin both can be only
It also can be used using one kind two or more.As above-mentioned thermoplastic resin, and heat resistance few from ionic impurity be high, to hold
The reasons why easily ensuring the joint reliability using die bonding film 2, sets out, preferably acrylic resin.
Above-mentioned acrylic resin is preferably to contain the monomeric unit from (methyl) acrylate as mass ratio most
The polymer of more main monomer units.As (methyl) acrylate, it can be mentioned, for example: as forming above-mentioned addition type spoke
(methyl) acrylate of the acrylic polymer contained in ray curing adhesive and illustrate (methyl) acrylic acid
Ester.Above-mentioned acrylic resin may include from can be with the monomer list of other monomer components of (methyl) acrylic ester copolymer
Member.As above-mentioned other monomer components, it can be mentioned, for example: carboxylic monomer；Anhydride monomers；The monomer of hydroxyl；Containing shrink
Glyceryl monomer；Containing sulfonic monomer；The monomer of phosphorous acidic group；The monomer containing functional group such as acrylamide, acrylonitrile；
Various multi-functional monomers etc., specifically, can be used solid as the radiation for being formed in above-mentioned 12 formation of adhesive phase
Other monomer components of the acrylic polymer contained in change type adhesive and the other monomer components illustrated.From making chip
From the perspective of bonding film 2 realizes high cohesion, above-mentioned acrylic resin is preferably (methyl) acrylate (especially alkane
The carbon number of base be 4 (methyl) alkyl acrylates below), carboxylic monomer, nitrogen atom monomer and multi-functional list
The copolymer of body (especially poly epihydric alcohol base class polyfunctional monomer), more preferably ethyl acrylate, butyl acrylate, propylene
The copolymer of acid, acrylonitrile and poly- (methyl) glycidyl acrylate.
When die bonding film 2 contains the thermoplastic resin with Thermocurable functional group, as the thermoplastic resin, example
The acrylic resin of the functional group containing Thermocurable such as can be used.In the acrylic resin of the functional group containing Thermocurable
Acrylic resin preferably comprises the principal monomer list most as mass ratio of the monomeric unit from (methyl) acrylate
Member.As (methyl) acrylate, it can be mentioned, for example: it can in above-mentioned addition type Radiation curing adhesive as being formed in
(methyl) acrylate of the acrylic polymer contained and illustrate (methyl) acrylate.On the other hand, as containing heat
Thermocurable functional group in the acrylic resin of curability functional group, it can be mentioned, for example: glycidyl, carboxyl, hydroxyl,
Isocyanate group etc..Wherein preferred glycidyl, carboxyl.That is, the acrylic resin as the functional group containing Thermocurable, special
Acrylic resin, carboxylic acrylic resin not preferably containing glycidyl.Additionally, it is preferred that with official containing Thermocurable
The acrylic resin that can be rolled into a ball includes curing agent together, and as the curing agent, it can be mentioned, for example as above-mentioned 12 shape of adhesive phase
At Radiation curing adhesive in the crosslinking agent that contains and the substance illustrated.When the propylene of the functional group containing Thermocurable
, it is preferable to use polyphenol compound is as curing agent when Thermocurable functional group in acid resin is glycidyl, such as
Above-mentioned various phenolic resin can be used.
For the die bonding film 2 before solidifying for chip engagement, in order to realize a degree of crosslinking
Degree, for example, it is preferable in die bonding film formation resin combination in advance compounding can with can contain in die bonding film 2
Functional group of the molecule chain end for the above-mentioned resin having etc. reacts and the multi-functional compounds that are bonded are as crosslinking component.In this way
Composition from the viewpoint for improving the adhesion properties at high temperature of die bonding film 2 and realize the improved sight of heat resistance
Point considers to be preferred.As above-mentioned crosslinking component, such as polyisocyanate compound can be enumerated.It is esterified as polyisocyanic acid
Object is closed, such as can be enumerated: toluene di-isocyanate(TDI), methyl diphenylene diisocyanate, paraphenylene diisocyanate, 1,5- naphthalene two
Isocyanates, polyalcohol and addition product of diisocyanate etc..Die bonding film formation is crosslinked in resin combination
The content of ingredient, relative to having 100 mass parts of resin of above-mentioned functional group that can be reacted and be bonded with the crosslinking component, from mentioning
From the viewpoint of the cohesive force for the die bonding film 2 that height is formed, more than preferably 0.05 mass parts, from the chip for improving formation
From the viewpoint of the bonding force of bonding film 2, preferably 7 below the mass.In addition, as above-mentioned crosslinking component, it can be by ring
Other multi-functional compounds such as oxygen resin are applied in combination with polyisocyanate compound.
Die bonding film 2 can contain filler.By being compounded filler, adjustable chip into die bonding film 2
The physical property such as electric conductivity, thermal conductivity, the elasticity modulus of bonding film 2.As filler, inorganic filler and organic filler can be enumerated, it is special
Not preferred inorganic filler.As inorganic filler, it can be mentioned, for example: aluminium hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, silicic acid
Calcium, magnesium silicate, calcium oxide, magnesia, aluminium oxide, aluminium nitride, aluminium borate whisker, boron nitride, crystalline silica, amorphous dioxy
The metal simple-substances such as SiClx and aluminium, gold, silver, copper, nickel and alloy, amorphous carbon black, graphite etc..Filler can have spherical, needle
The various shapes such as shape, flake.As above-mentioned filler, it can both be used only a kind of or can be used two or more.
The average grain diameter of above-mentioned filler is preferably 0.005~10 μm, and more preferably 0.005~1 μm.When above-mentioned average grain diameter
When being 0.005 μm or more, the wetability of the adherends such as semiconductor crystal wafer, cementability are further increased.When above-mentioned average grain diameter
When being 10 μm or less, the effect for the filler being added to assign above-mentioned each characteristic can be made abundant, and can ensure heat-resisting
Property.It should be noted that luminosity formula particle size distribution meter (such as trade name " LA- can be used for example in the average grain diameter of filler
910 ", the production of (strain) hole field is made) it finds out.
Die bonding film 2 can according to need containing other ingredients.As above-mentioned other ingredients, it can be mentioned, for example: resistance
Fire agent, silane coupling agent, ion trap agent etc..As above-mentioned fire retardant, it can be mentioned, for example: antimony trioxide, antimony pentaoxide, bromination
Epoxy resin etc..As above-mentioned silane coupling agent, it can be mentioned, for example: β-(3,4- epoxycyclohexyl) ethyl trimethoxy silane,
γ-glycidoxypropyltrime,hoxysilane, γ-glycidoxypropyl diethoxy silane etc..As it is above-mentioned from
Sub- capturing agent, it can be mentioned, for example: hydrotalcite, bismuth hydroxide, aqua oxidation antimony (such as Toagosei Co., Ltd
" IXE-300 "), the basic zirconium phosphate (such as " IXE-100 " of Toagosei Co., Ltd) of specific structure, magnesium silicate (such as assist
With " Kyoward 600 " of chemical industry Co. Ltd. system), alumina silicate (such as Kyowa Chemical Industry Co., Ltd
" Kyoward 700 ") etc..Also can be used can form the compound of complex compound as ion trap between metal ion
Agent.As this compound, it can be mentioned, for example: triazole class compounds, tetrazole compound, bipyridyliums compound.In these,
From the viewpoint of the stability of the complex compound formed between metal ion, preferred triazole class compounds.As this triazole
Class compound, it can be mentioned, for example: 1,2,3- benzotriazole, 1- { bis- (2- ethylhexyl) amino methyls of N, N- } benzotriazole, carboxylic
Base benzotriazole, 2- (2- hydroxy-5-methyl base phenyl) benzotriazole, -5- chlorobenzene is simultaneously by 2- (2- hydroxyl -3,5- di-tert-butyl-phenyl)
Triazole, 2- (2- hydroxyl -3- tert-butyl -5- aminomethyl phenyl) -5- chlorobenzotriazole, 2- (2- hydroxyl -3,5- di-tert-pentyl-phenyl)
Benzotriazole, 2- (2- hydroxyl -5- t-octyl phenyl) benzotriazole, 6- (2 benzotriazole base) -4- t-octyl -6 '-tert-butyl -
4 '-methyl -2,2 '-methylene bis-phenol, 1- (2 ', 3 '-hydroxypropyl) benzotriazole, 1- (1,2- dicarboxyl diethyl) benzo three
Azoles, 1- (2- ethylhexylamino methyl) benzotriazole, bis- tertiary pentyl -6- of 2,4- { (H- benzotriazole -1- base) methyl } phenol,
2- (2- hydroxyl -5- tert-butyl-phenyl) -2H- benzotriazole, C7-C9- alkyl -3- [3- (2H- benzotriazole -2- base) -5- (1,
1- dimethyl ethyl) -4- hydroxy phenyl] propione (propione) ether, 3- [3- tertiary butyl-4-hydroxy -5- (the chloro- 2H- benzene of 5-
And triazole -2- base) phenyl] octyl propionate, 3- [3- tertiary butyl-4-hydroxy -5- (the chloro- 2H- benzotriazole -2- base of 5-) phenyl] third
Sour 2- ethylhexyl, 2- (2H- benzotriazole-2- base)-6- (1- methyl-1-phenethyl)-4- (1,1,3,3- tetramethyl butyl)
Phenol, 2- (2H- benzotriazole -2- base) -4-TBP, 2- (2- hydroxy-5-methyl base phenyl) benzotriazole, 2- (2- hydroxyl
Base -5- t-octyl phenyl)-benzotriazole, 2- (3- tert-butyl -2- hydroxy-5-methyl base phenyl) -5- chlorobenzotriazole, 2- (2- hydroxyl
Base -3,5- di-tert-pentyl-phenyl) benzotriazole, 2- (2- hydroxyl -3,5- di-tert-butyl-phenyl) chloro- benzotriazole of -5-, 2- [2-
Hydroxyl -3,5- two (1,1- dimethyl benzyl) phenyl] -2H- benzotriazole, 2,2 '-di-2-ethylhexylphosphine oxides [6- (2H- benzotriazole -2-
Base) -4- (1,1,3,3- tetramethyl butyl) phenol], 2- [bis- (bis (alpha, alpha-dimethylbenzyl) base) phenyl of 2- hydroxyl -3,5-] -2H- benzo
Triazole, 3- [3- (2H- benzotriazole -2- base) -5- tert-butyl-hydroxy phenyl] methyl propionate etc..Alternatively, it is also possible to use pair
Hydroxy-containing compounds as defined in diphenol compounds, hydroxy-anthraquione compound, polyphenolic substance etc. are as ion trap agent.As
This hydroxy-containing compounds, specifically, can enumerate: 1,2- benzenediol, alizarin, 1,5- dihydroxy anthraquinone, tannic acid, galla turcica
Acid, gallicin, pyrogallol etc..Above-mentioned other additives can both be used only a kind of or can be used two or more.
The thickness of die bonding film 2 (being overall thickness in the case where laminated body) is not particularly limited, be such as 1~
200μm.The upper limit is preferably 100 μm, and more preferably 80 μm.Lower limit is preferably 3 μm, and more preferably 5 μm.
The glass transition temperature (Tg) of die bonding film 2 is preferably 0 DEG C or more, and more preferably 10 DEG C or more.When upper
When to state glass transition temperature be 0 DEG C or more, easily die bonding film 2 can be cut off by cooling extension.Chip connects
The upper limit for closing the glass transition temperature of film 2 is such as 100 DEG C.
Die bonding film 2 is not particularly limited, and storage tensile modulus (23 DEG C) is preferably 5~3000MPa, is more preferably
10~1000MPa.When above-mentioned storage tensile modulus is 5MPa or more, it can more easily pick up when picking up and be engaged with chip
The semiconductor chip of film 2.When above-mentioned storage tensile modulus is 3000MPa or less, after cooling extension until during pickup,
It can be less susceptible to that floating for 2 Self cleavage band 1 of die bonding film occurs.
Die bonding film 2 is not particularly limited, and storage tensile modulus (- 15 DEG C) is preferably 1~10GPa, more preferably 2
~5GPa.When above-mentioned storage tensile modulus is 1GPa or more, it can be easier to cut off die bonding film 2 by cooling extension.
It when above-mentioned storage tensile modulus is 10GPa or less, can be less susceptible to that 2 Self cleavage band of die bonding film occurs in cooling extension
1 floats.
The ratio of the above-mentioned storage tensile modulus (- 15 DEG C) of die bonding film 2 and above-mentioned storage tensile modulus (23 DEG C)
[(storage tensile modulus (- 15 DEG C))/(storage tensile modulus (23 DEG C))] are not particularly limited, preferably 2 or more, more preferably
30 or more.When above-mentioned ratio is 2 or more, 2 Self cleavage band 1 of die bonding film can be further suppressed in cooling extension and is floated,
And more easily the semiconductor chip with die bonding film 2 can be removed from cutting belt 1 when picking up.On in addition,
State it is big more the more preferred than more, from pick up with from the viewpoint of the balance of easness cut off, be such as 300 or less.
It should be noted that the above-mentioned storage tensile modulus (23 DEG C) of die bonding film 2 and above-mentioned storage tensile modulus
(- 15 DEG C) for example can replace adhesive phase and use die bonding film, in addition to this, the stretching with above-mentioned adhesive phase 12
Storage modulus (23 DEG C) and storage tensile modulus (- 15 DEG C) are carried out similarly measurement.
Die bonding film 2 can be enumerated to be made of the die bonding film of single layer as shown in Figure 2.It should be noted that
In this specification, single layer refers to the layer being made of same composition, the multiple shapes being laminated of the layer including being made of same composition
State.But the die bonding film in cutting die bonding film of the invention is not limited to the example, such as or by group
At the multilayered structure for the form that different two or more adhering films are laminated.
Cutting die bonding film 3 is not particularly limited, at 0 between adhesive phase 12 and die bonding film 2 DEG C
Peeling force is preferably 0.15~5N/100mm, more preferably 0.20~1N/100mm.Above-mentioned peeling force is 0.15N/100mm or more
When, the removing of the interface of the die bonding film 2 and adhesive phase 12 that are less susceptible to occur when cooling extension, as a result, Neng Goujin
One step inhibits to cut off semiconductor element that is bad, having cut off and disperses the generation of such unfavorable condition.Above-mentioned peeling force is 5N/
When 100mm or less, can further suppress by peeling force it is excessively high caused by cut off undesirable generation.It should be noted that bonding
When oxidant layer 12 is radiation-curable adhesive layer, (the area formed by the non-reduced type adhesive of bonding force after irradiation with radiation
Domain) (such as the removing at 0 DEG C between the adhesive phase 12 and die bonding film 2 at above-mentioned part 12a of above-mentioned peeling force
Power) preferably within the above range.
Cutting die bonding film 3 is not particularly limited, at 23 between adhesive phase 12 and die bonding film 2 DEG C
Peeling force is preferably 0.05~2.5N/100mm, more preferably 0.10~1N/100mm.Above-mentioned peeling force be 0.05N/100mm with
When upper, semiconductor chip when can be less susceptible to convey with die bonding film floats.Above-mentioned peeling force is 2.5N/
When 100mm or less, since the semiconductor chip of slimming in recent years is easily broken, even if being such semiconductor crystal wafer,
Also good light fissility can be played and be easily picked up.It should be noted that adhesive phase 12 is viscous for radiation curable
When mixture layer, the above-mentioned peeling force in (region formed by the non-reduced type adhesive of bonding force) is (on such as after irradiation with radiation
State the peeling force at 23 DEG C between the adhesive phase 12 at the 12a of part and die bonding film 2) preferably within the above range.
The cutting die bonding film 3 of an embodiment as cutting die bonding film of the invention for example can be with
Such as get off manufacture.Firstly, the combination that is used to form die bonding film 2 of the production comprising resin, crosslinking agent, filler, solvent etc.
Object (adhesive composite).
Then, and by adhesive composite it is coated on after forming coated film on slider, as desired by desolventizing, admittedly
Change etc. makes the coated film be solidified to form die bonding film 2.It as coating method, is not particularly limited, it can be mentioned, for example rollers
Known in painting, silk screen coating, rotogravure application etc. or usual coating method.In addition, as desolventizing condition, such as temperature 70~
160 DEG C, carry out in the range of 1~5 minute time.
Then, slider is removed respectively from cutting belt 1 and die bonding film 2, according to die bonding film 2 and adhesive
The two is bonded by the mode that layer 12 becomes binding face.Fitting can for example be carried out by crimping.At this point, not having to laminating temperature
It is particularly limited to, preferably such as 30~50 DEG C, more preferably 35~45 DEG C.In addition, line pressure is not particularly limited, preferably for example
0.1~20kgf/cm, more preferably 1~10kgf/cm.
As described above, in the case that adhesive phase 12 is radiation-curable adhesive layer, in the patch of die bonding film 2
When irradiating ultraviolet light israds to adhesive phase 12 after conjunction, such as from 11 side of substrate to the progress radiation photograph of adhesive phase 12
It penetrates, exposure is such as 50~500mJ, preferably 100~300mJ.
Irradiation with radiation usually carries out the part for the adhesive phase 12 for being equivalent to above-mentioned part 12a.Part is radiated
Line irradiate and when forming above-mentioned part 12a, can come across the photomask for being formed with pattern corresponding with above-mentioned part 12b into
Row.Further, it is also possible to enumerate the method for forming above-mentioned part 12a in mottled ground illumination radiation line.
As above operation, can make cutting die bonding film 3 for example shown in Fig. 2.In cutting die bonding film 3
In, it can be in 2 side of die bonding film with the prominent form slider (illustration omitted) of at least coating die bonding film 2.When
The size compared with the adhesive phase 12 of cutting belt 1 of die bonding film 2 is small, exists in adhesive phase 12 and is not bonded chip engagement
When the region of film 2, such as can be with the prominent form slider of at least coating die bonding film 2 and adhesive phase 12.Every
Be in vitro for by least avoid die bonding film 2 (such as die bonding film 2 and adhesive phase 12) expose in a manner of into
The element of row protection can be peeled off when using cutting die bonding film 3 from the film.As slider, it can be mentioned, for example: it is poly-
Ethylene glycol terephthalate (PET) film, polyethylene film, polypropylene film, with fluorine class remover and/or acrylate long-chain
The removers such as alkyl esters remover have carried out plastic film, the stationery etc. of surface coating.
[manufacturing method of semiconductor device]
Semiconductor device can be manufactured using cutting die bonding film of the invention.Specifically, can be by the inclusion of
The manufacturing method of following process manufactures semiconductor device: thin in the said chip engagement of cutting die bonding film of the invention
The dividing body of the semiconductor crystal wafer comprising multiple semiconductor chips is pasted in film side or energy monolithic turns to the half of multiple semiconductor chips
The process (sometimes referred to as " process A ") of semiconductor wafer；It is thin that cutting chip engagement of the invention is extended under conditions of relative low temperature
Cutting belt of the invention in film, at least cuts off said chip bonding film, obtains the semiconductor core with die bonding film
The process (sometimes referred to as " process B ") of piece；Above-mentioned cutting belt is extended under conditions of relatively-high temperature, broadening is above-mentioned to be connect with chip
Close the process (sometimes referred to as " process C ") at the mutual interval of semiconductor chip of film；It is above-mentioned thin with chip engagement with picking up
The process (sometimes referred to as " step D ") of the semiconductor chip of film.It should be noted that sometimes by half comprising above-mentioned operation A~D
The manufacturing method of conductor device is known as " the manufacturing method of the present invention ".
(process A)
In process A, paste in 2 side of die bonding film of cutting die bonding film 3 comprising multiple semiconductor chips
The dividing body or energy monolithic of semiconductor crystal wafer turn to the semiconductor crystal wafer of multiple semiconductor chips.Above-mentioned packet used in process A
The dividing body of semiconductor crystal wafer containing multiple semiconductor chips for example can be by the way that on the surface of semiconductor crystal wafer, (circuit layer is formed
Face or the non-formation face of its circuit layer) slot is formed, it then carries out back side grinding (backgrind) and comes until slot overleaf exposes
It obtains.
The segmentation of the above-mentioned semiconductor crystal wafer comprising multiple semiconductor chips used in an embodiment of process A
The semiconductor crystal wafer that body or energy monolithic turn to multiple semiconductor chips can obtain as follows.Firstly, such as (a) of Fig. 3 and Fig. 3
(b) slot segmentation 30a (slot segmentation formation process) is formed on semiconductor crystal wafer W shown in.Semiconductor crystal wafer W have the 1st face Wa and
2nd face Wb.The 1st face side Wa in semiconductor crystal wafer W has formd various semiconductor elements (illustration omitted), and should be partly
Wire structures required for conductor element etc. (illustration omitted) also have been formed on the 1st face Wa.Then there will be adhesive surface T1a
Wafer processing adhesive tape T1 fit in the 2nd face side Wb of semiconductor crystal wafer W after, to be maintained on wafer processing adhesive tape T1
The state of semiconductor crystal wafer W forms prescribed depth in the 1st face side Wa of semiconductor crystal wafer W using rotary cutters such as cutter devices
Slot segmentation 30a.Slot segmentation 30a be for make semiconductor crystal wafer W be separated into semiconductor core blade unit gap (in Fig. 3~5,
Slot segmentation 30a is schematically shown with thick line).
Then, as shown in (c) of Fig. 3, carry out having the wafer processing adhesive tape T2 of adhesive surface T2a to semiconductor crystal wafer W
The 1st face side Wa fitting and from semiconductor crystal wafer W remove wafer processing adhesive tape T1.
Then, as shown in (d) of Fig. 3, to maintain the state of semiconductor crystal wafer W on wafer processing adhesive tape T2, lead to
The grinding crossed from the 2nd face Wb makes semiconductor crystal wafer W be thinned to specific thickness (wafer thinning process).Grinding can be with
Use the abrasive machining device progress with grinding grinding stone.By the wafer thinning process, energy can be formed in the present embodiment
Monolithic turns to the semiconductor crystal wafer 30A of multiple semiconductor chips 31.Semiconductor crystal wafer 30A specifically have in the wafer
The 2nd face side Wb will monolithic turn to multiple semiconductor chips 31 position connection position (interconnecting piece).In semiconductor crystal wafer 30A
Thickness, i.e. the distance between the 2nd face side Wb front end of the 2nd face Wb and slot segmentation 30a of semiconductor crystal wafer 30A of interconnecting piece be
Such as 1~30 μm, preferably 3~20 μm.
Then, as shown in (a) of Fig. 4, the semiconductor crystal wafer 30A and cutting chip of wafer processing adhesive tape T2 will be held in
The die bonding film 2 of bonding film 3 is bonded.Then, as shown in (b) of Fig. 4, from semiconductor crystal wafer 30A removing wafer processing
With adhesive tape T2.When cutting the adhesive phase 12 in die bonding film 3 is radiation-curable adhesive layer, it can replace and cut
The above-mentioned illumination radiation line in the manufacturing process of die bonding film 3 is cut, to 2 laminated semiconductor wafer of die bonding film
Ultraviolet light israds is irradiated to adhesive phase 12 from 11 side of substrate after 30A.Exposure dose is such as 50~500mJ, preferably
For 100~300mJ.In cutting die bonding film 3, the irradiation that measure is reduced as the bonding force of adhesive phase 12 is carried out
Region (part 12a shown in FIG. 1) is to remove its peripheral part in 2 fit area of die bonding film in such as adhesive phase 12
Region in addition.
(process B)
In process B, the cutting belt 1 in die bonding film 3 is cut in extension under conditions of relative low temperature, is at least cut off
Die bonding film 2 obtains the semiconductor chip with die bonding film.
In an embodiment of process B, the adhesive phase of the cutting belt 1 first in cutting die bonding film 3
It is as shown in (a) of Fig. 5 that the cutting die bonding film 3 with semiconductor crystal wafer 30A is fixed after attaching ring frame 41 on 12
In the holding tool 42 of expanding unit.
Then, the 1st extension process under conditions of the progress relative low temperature as shown in (b) of Fig. 5 (cooling extension process), will
Semiconductor crystal wafer 30A monolithic turns to multiple semiconductor chips 31, and the die bonding film 2 that will cut die bonding film 3
The die bonding film 21 for small pieces is cut off, the semiconductor chip 31 with die bonding film is obtained.Process is extended cooling
In, the downside of cutting die bonding film 3 of the jack-up component 43 for the hollow cylindrical for having expanding unit in figure
Be connected to cutting belt 1 and rise, according to along including semiconductor crystal wafer 30A two-dimensional directional radially and circumferentially to fitting
The mode for having the cutting belt 1 of the cutting die bonding film 3 of semiconductor crystal wafer 30A to be stretched is extended.The extension so that
The condition of the tensile stress in the range of 15~32MPa, preferably 20~32MPa is generated in cutting belt 1 to carry out.Cooling extension work
Temperature condition in sequence is such as 0 DEG C hereinafter, being preferably -20~-5 DEG C, more preferably -15~-5 DEG C, further preferably -15
℃.Expansion rate (making to jack up the speed that component 43 rises) in cooling extension process is preferably 0.1~100mm/ seconds.In addition,
Propagation in cooling extension process is preferably 3~16mm.
When turning to the semiconductor crystal wafer 30A of multiple semiconductor chips using energy monolithic in process B, in semiconductor crystal wafer
Position that is relatively thin and being easy to produce crackle is cut off in 30A, so that monolithic turns to semiconductor chip 31.At the same time, process B
In, each semiconductor chip 31 is closely sealed in the die bonding film 2 closely sealed with the adhesive phase 12 of the cutting belt 1 extended
Deformation is suppressed in each region, and at the position in the vertical direction of the slot segmentation between semiconductor chip 31 being located in figure
It does not generate this deformation then to inhibit, the tensile stress generated in cutting belt 1 in this state plays a role.As a result, chip
Bonding film 2 is cut off at the position for being located at the vertical direction of slot segmentation between semiconductor chip 31.Passing through extension
After cutting off, as shown in (c) of Fig. 5, make to jack up the extended mode that component 43 declines and releases cutting belt 1.
(process C)
In process C, above-mentioned cutting belt 1 is extended under conditions of relatively-high temperature, is made above-mentioned with die bonding film
The mutual interval broadening of semiconductor chip.
In an embodiment of process C, the 2nd expansion under conditions of relatively-high temperature is carried out as shown in (a) of Fig. 6 first
It opens up process (room temperature extension process), makes distance (spacing distance) broadening between the semiconductor chip 31 with die bonding film.
In process C, the jack-up component 43 for the hollow cylindrical for again having expanding unit rises and extends cutting chip and connect
Close the cutting belt 1 of film 3.Temperature condition in 2nd extension process is such as 10 DEG C or more, preferably 15~30 DEG C.2nd extension
Expansion rate (making to jack up the speed that component 43 rises) in process is such as 0.1~10mm/ seconds, preferably 0.3~1mm/ seconds.
In addition, the propagation in the 2nd extension process is such as 3~16mm.In process C, make the semiconductor with die bonding film
The spacing distance of chip 31 is spread to can be suitably thin with chip engagement from the pickup of cutting belt 1 by aftermentioned pickup process
The degree of the semiconductor chip 31 of film.After by widening spacing distance, make to jack up component 43 as shown in (b) of Fig. 6
Decline releases the extended mode of cutting belt 1.After inhibit to release extended mode in cutting belt 1 with die bonding film
From the perspective of the spacing distance of semiconductor chip 31 narrows, preferably to partly leading in cutting belt 1 before releasing extended mode
The exterior portion of 31 holding area of body chip is heated, makes its contraction.
After process C, cleaning process can have as needed, had using the cleaning of the cleaning solutions such as water and have chip
31 side of semiconductor chip in the cutting belt 1 of the semiconductor chip 31 of bonding film.
(step D)
The semiconductor chip with die bonding film in step D (pickup process), after picking up singualtion.In process
In an embodiment of D, after as needed through above-mentioned cleaning process, is picked up from cutting belt 1 have chip as shown in Figure 7
The semiconductor chip 31 of bonding film.For example, scheming for the semiconductor chip 31 with die bonding film for picking up object
In the downside of cutting belt 1 increase the acicular member 44 of mechanism for picking after being jacked up across cutting belt 1, utilize absorption folder
Tool 45 is adsorbed holding.In pickup process, the jack-up speed of acicular member 44 is such as 1~100mm/ seconds, acicular member
44 jack-up amount is such as 100~500 μm.
The manufacturing method of above-mentioned semiconductor device can also include the other process other than process A~D.For example, at one
In embodiment, as shown in (a) of Fig. 8, the semiconductor chip 31 with die bonding film picked up is connect by chip
Close film 21 and adherend 51 temporarily fixed (temporary fixed step).As adherend 51, it can be mentioned, for example: lead frame, TAB
(tape automated bonding: Tape Automated Bonding) film, circuit board, semiconductor chip in addition made etc..Core
Shear bond power of the chip bonding film 21 when temporary fixed at 25 DEG C is preferably 0.2MPa or more relative to adherend 51, more
Preferably 0.2~10MPa.It, can for the above-mentioned shear bond power of die bonding film 21 is the composition of 0.2MPa or more
In aftermentioned lead-in wire bonding process inhibit due to ultrasonic activation, heating and in die bonding film 21 and semiconductor chip 31
Or the bonding plane generation of adherend 51 is shear-deformable, suitably carries out wire bonding.In addition, die bonding film 21 is solid temporarily
Shear bond power of the timing at 175 DEG C is preferably 0.01MPa or more, more preferably 0.01~5MPa relative to adherend 51.
Then, as shown in (b) of Fig. 8, electrode pad (illustration omitted) and the adherend 51 of semiconductor chip 31 are had
Some portion of terminal (illustration omitted) are electrically connected (lead-in wire bonding process) by bonding wire 52.The electrode pole of semiconductor chip 31
Plate, the portion of terminal of adherend 51 and the connection of bonding wire 52 can be realized and the ultrasonic bonding with heating, with not
Carry out the mode of 21 heat cure of die bonding film.As bonding wire 52, such as gold thread, aluminum steel, copper wire can be used
Deng.Lead heating temperature in wire bonding is such as 80~250 DEG C, preferably 80~220 DEG C.In addition, its heating time is
Several seconds~several minutes.
Then, as shown in (c) of Fig. 8, by for protecting semiconductor chip 31 on adherend 51, bonding wire 52
Semiconductor chip 31 is sealed (sealing process) by sealing resin 53.In sealing process, the thermosetting of die bonding film 21 is carried out
Change.Sealing resin 53 is formed in sealing process, such as by using the transfer molding technology that mold carries out.It is set as sealing
Such as epoxylite can be used in the constituent material of rouge 53.In sealing process, it is used to form the heating temperature of sealing resin 53
Degree is such as 165~185 DEG C, and heating time is such as 60 seconds~several minutes.When sealing resin 53 is not abundant in sealing process
When being solidified, the rear curing process for sealing resin 53 to be fully cured is carried out after sealing process.Even if sealing
In process in the case where the incomplete heat cure of die bonding film 21, can also in rear curing process with sealing resin 53 together
Carry out the complete heat cure of die bonding film 21.In rear curing process, heating temperature is such as 165~185 DEG C, when heating
Between be such as 0.5~8 hour.
In the above-described embodiment, as described above, keeping the semiconductor chip 31 with die bonding film temporarily fixed
After adherend 51, lead-in wire bonding process is carried out in the state of not making 21 complete heat cure of die bonding film.It can also be with
It is temporary in the semiconductor chip 31 that will have die bonding film in the manufacturing method of above-mentioned semiconductor device instead of this composition
When be fixed on adherend 51 after make 21 heat cure of die bonding film, then carry out lead-in wire bonding process.
In the manufacturing method of above-mentioned semiconductor device, as other embodiment, wafer shown in Fig. 9 can be carried out and subtracted
Thin process come replace referring to Fig. 3 (d) above-mentioned wafer thinning process.After the above process referring to (c) of Fig. 3, in Fig. 9
Shown in wafer thinning process, to maintain the state of semiconductor crystal wafer W on wafer processing adhesive tape T2 by from the 2nd face
The wafer is thinned to specific thickness by the grinding that Wb rises, and is formed comprising multiple semiconductor chips 31 and is held in wafer and adds
The semiconductor crystal wafer dividing body 30B of work adhesive tape T2.In above-mentioned wafer thinning process, it can be both ground to point using by wafer
Method (1st method) of the slot 30a until the 2nd face side Wb is exposed is cut, it can also be with the following method: being ground from the 2nd face side Wb
Wafer is cut to slot segmentation 30a is up to, slot segmentation 30a and the 2nd then is made to the extruding force effect of wafer using grindstone
It is cracked between the Wb of face, to form semiconductor crystal wafer dividing body 30B (the 2nd method).It is suitable for true according to used method
The slot segmentation 30a as formed above of (b) of fixed (a) and Fig. 3 referring to Fig. 3, depth from the 1st face Wa.In Fig. 9, use
Thick line schematically shows the slot segmentation 30a via the 1st method or the slot segmentation 30a via the 2nd method and coupled splits
Line.In the manufacturing method of above-mentioned semiconductor device, it can replace semiconductor crystal wafer 30A in process A and use and thus make
Semiconductor crystal wafer dividing body 30B as semiconductor crystal wafer dividing body, carry out the above-mentioned each process referring to Fig. 4 to Fig. 8.
(a) of Figure 10 and (b) of Figure 10 show the process B of the embodiment, i.e. by semiconductor crystal wafer dividing body 30B patch
Together in the 1st extension process (cooling extension process) carried out after cutting die bonding film 3.In process B preferably,
The downside of cutting die bonding film 3 of the jack-up component 43 for the hollow cylindrical for having expanding unit in figure abuts
In cutting belt 1 and rise, with along the two-dimensional directional radially and circumferentially comprising semiconductor crystal wafer dividing body 30B to fitting
The mode for having the cutting belt 1 of the cutting die bonding film 3 of semiconductor crystal wafer dividing body 30B to be stretched is extended.The expansion
Exhibition carries out under conditions of tensile stress in the range of cutting belt 1 generates 15~32MPa, preferably 20~32MPa.Cooling extension
Temperature condition in process is such as 0 DEG C hereinafter, preferably -20~-5 DEG C, more preferably -15~-5 DEG C, further preferably -
15℃.Expansion rate (making to jack up the speed that component 43 rises) in cooling extension process is preferably 1~400mm/ seconds.In addition,
Propagation in cooling extension process is preferably 1~300mm.Cooling extension process in this way is thin by cutting chip engagement
The die bonding film 21 that the die bonding film 2 of film 3 cuts off as small pieces obtains the semiconductor chip with die bonding film
31.Specifically, being engaged in the chip closely sealed with the adhesive phase 12 of the cutting belt 1 extended thin in cooling extension process
It deforms and is suppressed in the closely sealed each region of each semiconductor chip 31 of semiconductor crystal wafer dividing body 30B in film 2, and be located at
This deformation inhibiting effect is not generated then at the position in the vertical direction the slot segmentation 30a between semiconductor chip 31 in figure,
The tensile stress generated in cutting belt 1 in this state plays a role.As a result, die bonding film 2 is in being located at figure
It is cut off at the position in the vertical direction slot segmentation 30a between semiconductor chip 31.
In the manufacturing method of above-mentioned semiconductor device, as another other embodiment, it can be used and make as follows
Semiconductor crystal wafer 30C replaces semiconductor crystal wafer 30A used in process A or semiconductor crystal wafer dividing body 30B.
In this embodiment, it as shown in (b) of (a) of Figure 11 and Figure 11, is formed and is modified first in semiconductor crystal wafer W
Region 30b.Semiconductor crystal wafer W has the 1st face Wa and the 2nd face Wb.The 1st face side Wa in semiconductor crystal wafer W has formd respectively
Kind semiconductor element (illustration omitted), and wire structures required for the semiconductor element etc. (illustration omitted) have also been formed
On the 1st face Wa.Then wafer processing adhesive tape T3 with adhesive surface T3a is fitted in the 1st face side Wa of semiconductor crystal wafer W
Afterwards, to maintain the state of semiconductor crystal wafer W on wafer processing adhesive tape T3, from opposite with wafer processing adhesive tape T3 one
Side is located at the laser of inside wafer to semiconductor crystal wafer W along pre-segmentation line irradiation focal point, causes using by Multiphoton Absorbtion
Ablation modification area 30b is formed in semiconductor crystal wafer W.Modification area 30b is partly to lead for being separated into semiconductor crystal wafer W
The crisp atenuator region of body chip unit.Modification area is formed on pre-segmentation line in semiconductor crystal wafer about by laser irradiation
The method of 30b is documented in such as Japanese Unexamined Patent Publication 2002-192370 bulletin, the laser irradiation in the embodiment
Condition for example can be suitable for adjustment in the range of the following conditions.
< laser irradiation condition >
(A) laser
(B) optically focused lens
100 times of multiplying power or less
NA 0.55
To 100% or less the transmissivity of optical maser wavelength
(C) it is placed with movement speed 280mm/ seconds or less of the mounting table of semiconductor substrate
It should be noted that the method that modification area 4L is formed on pre-segmentation line for irradiation laser L, Japanese special
It opens and has carried out detailed narration in 2002-192370 bulletin etc., therefore omit detailed description here.
Then, as shown in (c) of Figure 11, to maintain the state of semiconductor crystal wafer W on wafer processing adhesive tape T3, lead to
Semiconductor crystal wafer W is thinned to specific thickness by the grinding crossed from the 2nd face Wb, be consequently formed can monolithic turn to and multiple partly lead
The semiconductor crystal wafer 30C (wafer thinning process) of body chip 31.It, can be in process in the manufacturing method of above-mentioned semiconductor device
Semiconductor crystal wafer 30A is replaced in A and uses the semiconductor crystal wafer 30C thus made as the semiconductor die for capableing of singualtion
Circle carries out the above-mentioned each process referring to Fig. 4 to Fig. 8.
As concrete example, (a) of Figure 12 and (b) of Figure 12 show process B in the embodiment, i.e. by semiconductor die
Circle 30C fits in the 1st extension process (cooling extension process) carried out after cutting die bonding film 3.Process is extended cooling
In, the downside of cutting die bonding film 3 of the jack-up component 43 for the hollow cylindrical for having expanding unit in figure
Be connected to cutting belt 1 and rise, with along the two-dimensional directional radially and circumferentially comprising semiconductor crystal wafer 30C to being fitted with
The mode that the cutting belt 1 of the cutting die bonding film 3 of semiconductor crystal wafer 30C is stretched is extended.The extension is being cut
It is carried out under conditions of tensile stress in the range of generating 5~28MPa with 1, be preferably 8~25MPa.In cooling extension process
Temperature condition is such as 0 DEG C hereinafter, being preferably -20~-5 DEG C, more preferably -15~-5 DEG C, further preferably -15 DEG C.It is cold
But the expansion rate (making to jack up the speed that component 43 rises) extended in process is preferably 1~400mm/ seconds.In addition, cooling extension
Propagation in process is preferably 1~300mm.Cooling extension process in this way, will cut the chip of die bonding film 3
The die bonding film 21 that bonding film 2 cuts off as small pieces obtains the semiconductor chip 31 with die bonding film.It is specific and
Speech forms crackle in cooling extension process in semiconductor crystal wafer 30C at fragile modification area 30b, and monolithic turns to half
Conductor chip 31.At the same time, in cooling extension process, in the core closely sealed with the adhesive phase 12 of the cutting belt 1 extended
It deforms and is suppressed in the closely sealed each region of each semiconductor chip 31 of semiconductor crystal wafer 30C in chip bonding film 2, and it is in place
This deformation inhibiting effect is not generated at the position in the direction vertical with the crackle forming position of wafer in figure then, in the shape
The tensile stress generated in cutting belt 1 under state plays a role.As a result, die bonding film 2 be located at figure in partly lead
It is cut off at the position in the vertical direction of crackle forming position between body chip 31.
In addition, cutting die bonding film 3 can be used in as described above in the manufacturing method of above-mentioned semiconductor device
To the purposes of the semiconductor chip with die bonding film, it can be also used for obtaining multiple semiconductor chips be laminated and are carried out
The purposes of the semiconductor chip with die bonding film when 3 dimension installation.Between the semiconductor chip 31 of this 3 dimension installation both
Can be with die bonding film 21 together sandwiched spacer, it can not also sandwiched spacer.
Embodiment
It is exemplified below embodiment and the present invention is described in more detail, but the present invention is not by any restriction of these embodiments.
Embodiment 1
(production of cutting belt)
Acrylic acid 2- ethyl is added into the reaction vessel for having condenser pipe, nitrogen ingress pipe, thermometer and agitating device
Own 100 mass parts of ester (2EHA), 19 mass parts of acrylic acid 2- hydroxyl ethyl ester (HEA), 0.4 mass parts of benzoyl peroxide and toluene
80 mass parts polymerize within 10 hours at 60 DEG C, obtain the solution comprising acrylic polymer A in nitrogen stream.
It include that 2- methacryloxyethyl isocyanates (MOI) is added in the solution of acrylic polymer A to this
1.2 mass parts are obtained molten comprising acrylic polymer A ' in 50 DEG C of progress addition reaction in 60 hours in air draught
Liquid.
Then, polyisocyanate compound (trade name is added relative to 100 mass parts of acrylic polymer A '
" Coronate L ", Tosoh (strain) system) 1.3 mass parts and Photoepolymerizationinitiater initiater (trade name " Irgacure184 ", BASF AG
System) 3 mass parts, thus make adhesive composition A.
Obtained adhesive composition A is coated on the face for implementing organosilicon processing of PET class slider, 120
Be heating and curing within 2 minutes at DEG C, forms 10 μm of thickness of adhesive phase A.Then, it is bonded in the exposed surface of adhesive phase A
As the polyvinyl chloride film (trade name " V9K ", ACHILLES CORPORATION system, 100 μm of thickness) of substrate, at 23 DEG C
It saves 72 hours, makes cutting belt A.
(production of die bonding film)
So that following (a)~(e) is dissolved in methyl ethyl ketone, obtains the adhesive composite of 20 mass % of solid component concentration
A。
(a) (trade name " SG-70L ", Nagase ChemteX Corporation system, vitrifying turn acrylic resin
4 DEG C of temperature): 100 mass parts (solid component)
(b) epoxy resin (trade name " N-655-EXP-S ", DIC (strain) system): 13 mass parts
(c) epoxy resin (trade name " JER828 ", Mitsubishi Chemical's (strain) system): 13 mass parts
(d) phenolic resin (trade name " MEH-7851ss ", bright and chemical conversion (strain) system): 119 mass parts
(e) spherical silicon dioxide (trade name " SO-25R ", Admatechs system): 222 mass parts
After obtained adhesive composite A is coated on the face for implementing organosilicon processing of PET system slider,
Be heating and curing within 2 minutes at 130 DEG C, the die bonding film A of 10 μm of production thickness (average thickness).
(production of cutting die bonding film)
It is removed from cutting belt A by PET system slider, die bonding film A is bonded on the adhesive phase of exposing.Fitting makes
With hand pressure roller.Then, from the ultraviolet light of cutting belt side irradiation 300mJ, production cutting die bonding film A.
Comparative example 1
(production of cutting belt)
It is removed as substrate using EVA system film (trade name " NED#125 ", GUNZE LIMITED. system, 125 μm of thickness)
It other than this, operates similarly to Example 1, obtains cutting belt B.
(production of cutting die bonding film)
It instead of cutting belt A, using cutting belt B, in addition to this, operates similarly to Example 1, production cutting chip engagement is thin
Film B.
Comparative example 2
(production of cutting belt)
As substrate, using with 3 layers of the polyethylene/polypropylene/polyethylene plastic basis material constituted (trade name " DDZ ",
90 μm of GUNZE LIMITED. system, thickness), it in addition to this, operates similarly to Example 1, obtains cutting belt C.
(production of cutting die bonding film)
It instead of cutting belt A, using cutting belt C, in addition to this, operates similarly to Example 1, production cutting chip engagement is thin
Film C.
Comparative example 3
(production of cutting belt)
This is removed using EVA system film (trade name " RB0104 ", Cangfu weaving (strain) system, 130 μm of thickness) as substrate
In addition, it operates similarly to Example 1, obtains cutting belt D.
(production of cutting die bonding film)
It instead of cutting belt A, using cutting belt D, in addition to this, operates similarly to Example 1, production cutting chip engagement is thin
Film D.
< evaluates >
Cutting belt obtained in Examples and Comparative Examples and cutting die bonding film are conducted the following evaluation.As a result
It is shown in table 1.
(tensile stress and stress relaxation rate of cutting belt)
The cutting belt obtained in the Examples and Comparative Examples using the direction MD of substrate as length direction cut length 140mm ×
Width 20mm obtains strip test film.The strip test film is made into Initial grip spacing under 23 DEG C, the atmosphere of 50%RH
From being 100mm, tensile speed 100mm/ minutes, cupping machine (trade name " AFX-50NX ", (strain) Shimadzu Seisakusho Ltd. are used
System) stretched (elongation) until elongation be 30%, then stop, measuring 2000 seconds stress values.Also, it obtains being stretched
Stress value when stopping afterwards has stopped stress value conduct when passing through 1000 seconds as " stress value when 30% stretching ", self stretch
" stress value after 30% stretching 1000 seconds ".Also, after stress value when stretching 30% stretches 1000 seconds as A, 30%
Stress value finds out the stress relaxation carried out after 30% stretching 1000 seconds under the conditions of 23 DEG C of temperature using following formula as B
Rate.
Stress relaxation rate (%)=(A-B)/A × 100
(floating for the semiconductor chip with die bonding film)
As laser processing device, commodity in use name " ML300-Integration " ((strain) Tokyo precision system) makes optically focused
Point is directed at the inside of 12 inches of semiconductor crystal wafer, laser is irradiated along the pre-segmentation line of clathrate (10mm × 10mm), half
The inside of semiconductor wafer forms modification area.The irradiation of laser is carried out according to following conditions.
(A) laser
(B) optically focused lens
50 times of multiplying power
NA 0.55
To the transmissivity 60% of optical maser wavelength
(C) it is placed with the movement speed of the mounting table of semiconductor substrate 100mm/ seconds
After forming modification area inside semiconductor crystal wafer, back side grinding protective glue is bonded on the surface of semiconductor crystal wafer
Band, with back grinder (trade name " DGP8760 ", DISCO Corporation system) according to making the thickness of semiconductor crystal wafer reach 30 μ
The mode of m is ground the back side.
The semiconductor die of modification area is formed with to cutting die bonding film fitting obtained in embodiment and comparative example
Round and cut ring.Then semiconductor is carried out with chip separating device (trade name " DDS2300 ", DISCO Corporation system)
Wafer and die bonding film are cut off.Specifically, firstly, using cooling expanding element in -15 DEG C of temperature, defined speed
Cooling extension is carried out under conditions of degree, defined propagation, cuts off semiconductor crystal wafer.It should be noted that expanding for cooling
Speed (expansion rate) when exhibition, embodiment 1 is 0.5mm/ seconds, comparative example 1~3 is 1mm/ seconds, for propagation, embodiment 1
For 3mm, comparative example 1 and 2 be 8mm, comparative example 3 is 4mm.It should be noted that preferred condition (the extension speed of cooling extension
Degree, propagation etc.) it is different according to the type of cutting belt, therefore, under the conditions of most preferred in embodiment and each comparative example into
The cooling extension of row.After cooling extension, confirmation is cut off and semiconductor chip with die bonding film floats that there is no problem.
After the cutting off of semiconductor crystal wafer and die bonding film, uses above-mentioned cooling expanding element in room temperature as former state, expands
Exhibition speed 0.3mm/ second, progress room temperature extension under conditions of propagation 8mm.Then, certainly with micro- sem observation die bonding film
(what is floated when the area of die bonding film entirety is set as 100% engages the area for the part that cutting belt floats with chip
The ratio of the area of the semiconductor chip of film).Do not float or is evaluated as zero when floating within the allowable range, there is obvious float
Rise the case where be evaluated as ×.As a result shown in table 1.It should be noted that preferred condition (expansion rate, extension of room temperature extension
Amount etc.) it is different according to the type of cutting belt, therefore, room temperature expansion is carried out under the conditions of most preferred in embodiment and each comparative example
Exhibition, is evaluated.
[table 1]
(table 1)
Claims (6)
1. a kind of cutting belt, the adhesive phase with substrate and stacking on the substrate,
At least one direction of the cutting belt, under the conditions of 23 DEG C of temperature carry out 30% stretch 1000 seconds after stress
Relaxation rate is 45% or more,
At least one direction, under the conditions of 23 DEG C of temperature carry out 30% stretch 1000 seconds after stress value be 4MPa
Below.
2. cutting belt according to claim 1, wherein the substrate with a thickness of 40~150 μm.
3. cutting belt according to claim 1 or 2, wherein at least one direction, under the conditions of 23 DEG C of temperature
Carrying out stress value when 30% stretching is 5MPa or more.
4. cutting belt described in any one of claim 1 to 3, wherein at least one direction, in 23 DEG C of temperature
Carried out under the conditions of degree 30% stress value when stretching and at least one direction, under the conditions of 23 DEG C of temperature carry out 30%
The difference of stress value after stretching 1000 seconds is 5MPa or more.
5. a kind of cutting die bonding film includes cutting belt according to any one of claims 1 to 4 and is layered in institute
The die bonding film on the described adhesive layer of cutting belt is stated,
The die bonding film is cut off to use by application tensile stress.
6. a kind of manufacturing method of semiconductor device comprising following process:
It pastes comprising multiple half the die bonding film side of process A, the cutting die bonding film described in claim 5
The dividing body or energy monolithic of the semiconductor crystal wafer of conductor chip turn to the semiconductor crystal wafer of multiple semiconductor chips,
Process B is extended the cutting belt in the cutting die bonding film under conditions of compared with low temperature, at least will
The die bonding film is cut off, and obtains the semiconductor chip of microarray strip bonding film,
Process C is extended the cutting belt under conditions of higher temperatures, widens the semiconductor of the microarray strip bonding film
The mutual interval of chip,
Step D picks up the semiconductor chip of the microarray strip bonding film.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-130865 | 2017-07-04 | ||
| JP2017130865A JP7041475B2 (en) | 2017-07-04 | 2017-07-04 | Manufacturing method of dicing tape, dicing die bond film, and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109207077A true CN109207077A (en) | 2019-01-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810725608.9A Pending CN109207077A (en) | 2017-07-04 | 2018-07-04 | The manufacturing method of cutting belt, cutting die bonding film and semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7041475B2 (en) |
| KR (1) | KR102489355B1 (en) |
| CN (1) | CN109207077A (en) |
| TW (1) | TW201907470A (en) |
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| CN111826100A (en) * | 2019-04-17 | 2020-10-27 | 日东电工株式会社 | Dicing die bonding film |
| CN112080218A (en) * | 2019-06-13 | 2020-12-15 | 日东电工株式会社 | Dicing tape and dicing die-bonding film |
| CN112778922A (en) * | 2019-11-07 | 2021-05-11 | 日东电工株式会社 | Dicing tape and dicing die-bonding film |
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| JP7446773B2 (en) | 2019-11-07 | 2024-03-11 | 日東電工株式会社 | Dicing tape and dicing die bond film |
| JP7430056B2 (en) | 2019-12-20 | 2024-02-09 | 日東電工株式会社 | dicing die bond film |
| EP4349592A1 (en) * | 2021-05-28 | 2024-04-10 | Mitsui Chemicals Tohcello, Inc. | Adhesive film for backgrinding, and method for manufacturing electronic device |
| KR20240005910A (en) * | 2021-05-28 | 2024-01-12 | 미쓰이 가가쿠 토세로 가부시키가이샤 | Methods of manufacturing electronic devices |
| CN117397005A (en) * | 2021-05-28 | 2024-01-12 | 三井化学东赛璐株式会社 | Method for manufacturing electronic device |
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Also Published As
| Publication number | Publication date |
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| KR102489355B1 (en) | 2023-01-18 |
| KR20190004655A (en) | 2019-01-14 |
| JP7041475B2 (en) | 2022-03-24 |
| JP2019016633A (en) | 2019-01-31 |
| TW201907470A (en) | 2019-02-16 |
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