JP2019016633A - Dicing tape, dicing die-bonding film, and method of manufacturing semiconductor device - Google Patents

Abstract

To provide a dicing tape that is less likely to cause floating of a semiconductor chip with a die-bonding film in normal-temperature expansion and thereafter, and to provide a dicing die-bonding film using the dicing tape.SOLUTION: A dicing tape comprises a base material, and an adhesive layer laminated on the base material. A stress alleviation rate after 1,000 seconds from 30% stretch under a temperature condition of 23°C, at least in one direction, is equal to or more than 45%. A stress value after 1,000 seconds from 30% stretch under a temperature condition of 23°C, in the at least one direction, is equal to or less than 4 MPa.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a dicing tape, a dicing die bond film, and a method for manufacturing a semiconductor device. More specifically, the present invention relates to a dicing tape, a dicing die bond film using the dicing tape, and a method for manufacturing a semiconductor device using the dicing die bond film.

  Conventionally, dicing tapes and dicing die bond films are sometimes used in the manufacture of semiconductor devices. The dicing tape has a form in which an adhesive layer is provided on a base material, and a semiconductor wafer is arranged on the adhesive layer so that individual semiconductor chips are not scattered when the semiconductor wafer is diced (cut). (For example, refer to Patent Document 1).

  A dicing die-bonding film is provided so that a die-bonding film can be peeled off on an adhesive layer of a dicing tape. In manufacturing a semiconductor device, a semiconductor wafer is held on a die bond film of a dicing die bond film, and the semiconductor wafer is diced into individual semiconductor chips. Thereafter, the semiconductor chip is peeled off from the dicing tape together with the die bond film, and the semiconductor chip is fixed to an adherend such as a lead frame through the die bond film.

  When using a dicing die bond film in which a die bond film is laminated on a dicing tape and dicing a semiconductor wafer while holding the die bond film, it is necessary to cut the die bond film simultaneously with the semiconductor wafer. However, in a general dicing method using a diamond blade, adhesion between the die bond film and the dicing tape due to the influence of heat generated during dicing, adhesion of semiconductor chips due to generation of cutting debris, cutting debris on the side of the semiconductor chip Therefore, it is necessary to slow down the cutting speed, which increases the cost.

  Therefore, in recent years, a method for obtaining individual semiconductor chips by forming grooves on the surface of a semiconductor wafer and then performing back surface grinding (sometimes referred to as “DBG (Dicing Before Grinding)”) (for example, Patent Document 2). Or by forming a modified region by irradiating a laser beam to the planned division line of the semiconductor wafer, and then making the semiconductor wafer easily divisible by the planned division line. After pasting, the dicing tape is expanded at a low temperature (for example, −25 to 0 ° C.) (hereinafter sometimes referred to as “cool expand”), thereby cleaving both the semiconductor wafer and the die bond film, Individual semiconductor chip (semiconductor chip with die bond film) A method has been proposed (see, for example, Patent Document 3). This is a so-called stealth dicing (registered trademark) method. Also, in DBG, a method of obtaining individual semiconductor chips with die bond films by pasting the obtained individual semiconductor chips on a dicing die bond film and then cleaving the dicing tape by cool expanding the dicing tape is also known. It has been.

JP 2011-216563 A JP 2003-007649 A JP 2009-164556 A

  In DBG, stealth dicing, etc., after cleaving the die bond film, the dicing die bond film is expanded near room temperature (hereinafter sometimes referred to as “room temperature expand”), and the interval between adjacent semiconductor chips with die bond film And then fixing the semiconductor chip with the gap between the semiconductor chips widened by subjecting the outer periphery of the semiconductor chip to thermal contraction (hereinafter sometimes referred to as “heat shrink”). The chip can be easily picked up.

  In recent years, circuit layers and silicon layers are becoming thinner due to the need for higher capacity semiconductors. However, the increase in the thickness (total thickness) of the circuit layer due to the increase in the number of circuit layers tends to increase the proportion of the resin contained in the circuit layer. The difference in coefficient of linear expansion from the layered silicon layer becomes significant, and the semiconductor chip is likely to warp. For this reason, in particular, a semiconductor chip obtained by dicing and having a multilayered circuit layer with a die bond film is formed at the interface between the pressure-sensitive adhesive layer of the dicing tape and the die bond film at room temperature expansion and thereafter (for example, until pickup) Floating (peeling) was likely to occur.

  The present invention has been made in view of the above problems, and the purpose thereof is a dicing tape in which a semiconductor chip with a die bond film is unlikely to float during normal temperature expansion, and a dicing die bond film using the dicing tape, and An object of the present invention is to provide a method of manufacturing a semiconductor device using the dicing die bond film.

  As a result of intensive studies to achieve the above object, the present inventors have found that the stress relaxation rate after elapse of 30% at room temperature is not less than a specific value and the stress value after elapse of time is not more than a specific value. It has been found that when a dicing tape is used, the floating does not easily occur even when a semiconductor chip having a multilayered circuit layer is used at the time of normal temperature expansion and thereafter. The present invention has been completed based on these findings.

  That is, the present invention has a base material and a pressure-sensitive adhesive layer laminated on the base material, and has a stress relaxation rate after 1000 seconds after stretching 30% at 23 ° C. in at least one direction. Is 45% or more, and provides a dicing tape having a stress value of 4 MPa or less after 1000 seconds after stretching 30% under the temperature condition of 23 ° C. in at least one direction.

  When dicing tape is expanded at room temperature, stress is generated in the dicing tape. The generated stress then diffuses and disappears, but usually it takes a long time to disappear, so it remains in the dicing tape for a long time. The present inventors apply the thus generated and remaining stress to the bottom surface (particularly, the end portion) of the die-bonded film-attached semiconductor chip on the dicing tape, so that the die-bonding film can be used at or after the room temperature expansion. The knowledge that the floating of the attached semiconductor chip occurs was obtained. In particular, in the case of a semiconductor chip having a multi-layered circuit layer, it tends to warp as described above. Therefore, the higher the ratio of the circuit layer, the easier the floating of the semiconductor chip with a die bond film occurs.

  However, the dicing tape of the present invention has a stress relaxation rate of 45% or more after 1000 seconds after stretching 30% at 23 ° C. in at least one direction, and at least 23 ° C. in at least one direction. Since the stress value 1000 seconds after stretching 30% under temperature conditions is 4 MPa or less, the stress generated when expanding at room temperature is reduced to a sufficiently low value at an early stage. The stress applied to the bottom surface of the semiconductor chip with film can be suppressed as much as possible. Thus, even when a semiconductor chip having a multilayered circuit layer is used as well as a semiconductor chip that is not multilayered, it is difficult for floating to occur during normal temperature expansion and thereafter.

  In the dicing tape of the present invention, the thickness of the substrate is preferably 40 to 150 μm. In addition to the stress relaxation rate of the dicing tape and the stress value after 30% stretching 1000 seconds being within a specific range, the thickness of the base material is within the above range, so that the stress is attached to the die bond film during normal temperature expansion. Since it is easy to apply uniformly to the semiconductor chip and the stress is unevenly generated and hardly remains, the floating of the semiconductor chip with the die-bonding film is more unlikely to occur during and after the normal temperature expansion.

  Moreover, when the initial elastic modulus of the die bond film laminated | stacked on the said adhesive layer in the said dicing tape is high, when the dicing tape of this invention is 30% extended | stretched on the said 23 degreeC temperature conditions of the said at least one direction. The stress value is preferably 5 MPa or more. In this case, it becomes easier to cleave the semiconductor wafer and the die bond film during the cool expansion.

  Moreover, when the initial elastic modulus of the die bond film laminated | stacked on the said adhesive layer in the said dicing tape is high, when the dicing tape of this invention is 30% extended | stretched on the said 23 degreeC temperature conditions of the said at least one direction. It is preferable that the difference between the stress value and the stress value 1000 seconds after stretching 30% under the temperature condition of 23 ° C. in at least one direction is 5 MPa or more. In this case, since the stress generated at the time of normal temperature expansion is reduced at an early stage, the stress applied to the bottom surface of the semiconductor chip with the die bond film during and after the normal temperature expansion can be suppressed as much as possible, and the semiconductor chip having a multilayered circuit layer Even in the case of using, it is even more difficult for floating to occur during and after expansion at room temperature.

  Moreover, this invention has the said dicing tape and the die-bonding film laminated | stacked on the said adhesive layer in the said dicing tape, The dicing die-bonding film used by the said die-bonding film cleaving by applying a tensile stress I will provide a. Such a dicing die-bonding film of the present invention is capable of cleaving the die-bonding film by cool expanding, and the stress generated when expanding at room temperature is reduced to a sufficiently low value at an early stage. The stress applied to the bottom surface of the semiconductor chip can be suppressed as much as possible. Even when using a semiconductor chip with a multi-layered circuit layer as well as a semiconductor chip that is not a multi-layered dicing die-bonding film that can cleave the die-bonding film with a cool expand, And it is difficult for floating to occur after that.

  In addition, the present invention is compared with the step A in which a divided body of a semiconductor wafer including a plurality of semiconductor chips or a semiconductor wafer that can be separated into a plurality of semiconductor chips is attached to the die bonding film side of the dicing die bond film. Expanding the dicing tape in the dicing die-bonding film under a condition of low temperature, and cleaving at least the die-bonding film to obtain a semiconductor chip with a die-bonding film, and the dicing tape under a relatively high-temperature condition Is expanded to provide a method for manufacturing a semiconductor device, which includes a step C for expanding the distance between the semiconductor chips with die bond film and a step D for picking up the semiconductor chip with die bond film. According to such a method for manufacturing a semiconductor device of the present invention, the stress generated when expanding at room temperature is quickly reduced to a sufficiently low value, so that stress applied to the bottom surface of the semiconductor chip with the die bond film during and after expansion at room temperature. Can be suppressed as much as possible. For this reason, the die bond film can be cleaved by the cool expand, and even when a semiconductor chip having a multilayered circuit layer is used as well as a semiconductor chip that is not multilayered, it floats at and after the room temperature expansion. A method of manufacturing a semiconductor device that is unlikely to occur can be provided.

  The dicing tape of the present invention hardly causes the semiconductor chip with the die bond film to float during and after the normal temperature expansion. In particular, even when a semiconductor chip having a multilayered circuit layer is used, it is difficult for floating to occur. In addition, the dicing die-bonding film using the dicing tape of the present invention hardly causes floating of the semiconductor chip with the die-bonding film on which the semiconductor chips are laminated at the time of normal temperature expansion and thereafter.

It is a cross-sectional schematic diagram which shows one Embodiment of the dicing tape of this invention. It is a cross-sectional schematic diagram which shows one Embodiment of the dicing die-bonding film of this invention. 4 represents a part of steps in a method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 4 represents a part of steps in a method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 4 represents a part of steps in a method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 4 represents a part of steps in a method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 4 represents a part of steps in a method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 4 represents a part of steps in a method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. The one part process in the modification of the manufacturing method of the semiconductor device using the dicing die-bonding film of this invention is represented. The one part process in the modification of the manufacturing method of the semiconductor device using the dicing die-bonding film of this invention is represented. The one part process in the modification of the manufacturing method of the semiconductor device using the dicing die-bonding film of this invention is represented. The one part process in the modification of the manufacturing method of the semiconductor device using the dicing die-bonding film of this invention is represented.

[Dicing tape]
The dicing tape of this invention has a base material and the adhesive layer laminated | stacked on the said base material. One embodiment of the dicing tape (dicing sheet) of the present invention will be described below. FIG. 1 is a schematic cross-sectional view showing an embodiment of the dicing tape of the present invention.

  As shown in FIG. 1, the dicing tape 1 includes a base material 11 and an adhesive layer 12 laminated on the base material 11.

  As described above, the dicing tape 1 has a stress relaxation rate of 45% or more, preferably 50% or more, more preferably 1000 seconds after stretching 30% at 23 ° C. in at least one direction. It is 55% or more, more preferably 60% or more. Since the stress relaxation rate is 45% or more, the stress generated at the time of normal temperature expansion is reduced at an early stage. it can. For this reason, even when a semiconductor chip having a multi-layered circuit layer is used, floating is unlikely to occur during normal temperature expansion and thereafter. The upper limit of the stress relaxation rate is not particularly limited, and the higher the stress relaxation rate, the faster the residual stress decreases. In the present specification, the “stress relaxation rate after 1000 seconds after stretching 30% at 23 ° C. in at least one direction” may be simply referred to as “stress relaxation rate”.

  The stress relaxation rate is a ratio of a decrease amount from the time of 30% stretching to the stress value after 1000 seconds with respect to the stress value at the time of 30% stretching at 23 ° C. in at least one direction. The stress relaxation rate is determined by the following stress relaxation rate calculation method.

<Calculation method of stress relaxation rate>
From the dicing tape 1, at least one direction of the base material 11 is set as the length direction, and is cut into a length of 140 mm × a width of 20 mm to obtain a strip-shaped test piece. The strip-shaped test piece was stretched (elongated) to an elongation rate of 30% with a tensile tester at an initial chuck distance of 100 mm under an atmosphere of 23 ° C. and 50% RH, and stopped. The stress value in the range including 1000 seconds after the stop is measured. Then, the stress value at the time of 30% stretching (stress value at the time of stretching stop) is A, and the stress value 1000 seconds after the stretching is stopped is B, and the following formula is used.
Stress relaxation rate (%) = (A−B) / A × 100

  As described above, the dicing tape 1 has a stress value of 1000 seconds after stretching 30% in the temperature condition of 23 ° C. in at least one direction (that is, the direction in which the stress relaxation rate is 45% or more). 4 MPa or less, preferably 3.8 MPa or less, more preferably 3.5 MPa or less. The lower limit of the stress value is 0 MPa, and the lower the stress value, the smaller the residual stress, which is preferable because the floating of the semiconductor chip with the die bond film is less likely to occur. The stress value is obtained in the process of calculating the stress relaxation rate. In the present specification, the stress value after 1000 seconds after stretching 30% under a temperature condition of 23 ° C. in at least one direction may be referred to as “stress value after 1000 seconds of 30% stretching”.

  In addition, the stress relaxation rate and the stress value after 1000 seconds of 30% stretching may be within the above ranges in at least one direction of the dicing tape 1, respectively. Further, the one direction in which the stress relaxation rate is within the above range and the one direction in which the stress value after 1000 seconds of 30% stretching is within the above range are the same direction. The at least one direction is preferably the MD direction. The MD direction of the dicing tape 1 is the same direction as the MD direction of the substrate 11.

  When the initial elastic modulus of the die bond film 2 described later is high, the dicing tape 1 is not particularly limited, but at a temperature condition of 23 ° C. in at least one direction (that is, the direction in which the stress relaxation rate is 45% or more). The stress value when stretched 30% (the stress value when stretched 30%) is preferably 5 MPa or more, more preferably 6.5 MPa or more, and even more preferably 8 MPa or more. The upper limit of the stress value is, for example, 30 MPa, preferably 20 MPa, and more preferably 15 MPa. When the stress value is 5 MPa or more, cleaving of the semiconductor wafer and the die bond film becomes easier during the cool expansion. The stress value is obtained in the process of calculating the stress relaxation rate. In addition, when the initial elastic modulus of the die-bonding film 2 is low, the stress value at the time of the 30% stretching may be less than 5 MPa.

  When the initial elastic modulus of the below-described die bond film 2 is high, the dicing tape 1 is not particularly limited, but at the time of the 30% stretching in the at least one direction (that is, the direction in which the stress relaxation rate is 45% or more). The difference between the stress value and the stress value after 1000 seconds of 30% stretching [(stress value at 30% stretching) − (stress value after 1000 seconds of 30% stretching)] is preferably 5 MPa or more, and more preferably. Is 5.5 MPa or more, more preferably 6 MPa or more. If the difference between the stress values is 5 MPa or more, the stress generated when expanding at room temperature is reduced early, so that the stress applied to the bottom surface of the semiconductor chip with the die bond film during and after expansion at room temperature can be suppressed as much as possible. Even when a semiconductor chip having multiple layers is used, floating is less likely to occur during and after normal temperature expansion. The upper limit of the difference between the stress values is not particularly limited, and the larger the larger, the lower the residual stress. Therefore, it is preferable that the semiconductor chip with the die bond film does not easily float. . When the initial elastic modulus of the die bond film 2 is low, the difference in the stress values may be less than 5 MPa.

  The dicing tape 1 is not particularly limited, but the tensile strength when stretched 100% under at least one temperature condition of 0 ° C. or lower in at least one direction (preferably the direction in which the stress relaxation rate is 45% or higher). Is preferably 10 N / 10 mm or more, more preferably 12 N / 10 mm or more. When the tensile strength is 10 N / 10 mm or more, the stress applied during the cool expansion is effectively transmitted to the modified region of the semiconductor wafer and the portion of the die bond film that is cleaved, and the fractured surface tends to be more uniform, It is possible to make it more difficult for the semiconductor chip with a die bond film to float during and after the expansion.

  The dicing tape 1 is not particularly limited, but preferably has heat shrinkability in at least one direction (preferably, the direction in which the stress relaxation rate is 45% or more). When the dicing tape 1 has heat shrinkability, it becomes possible to heat-shrink the outer peripheral portion of the semiconductor wafer during normal temperature expansion, thereby fixing the separated semiconductor chips with die-bonded films in an expanded state. Therefore, the semiconductor chip can be easily picked up.

(Base material)
The substrate 11 is an element that functions as a support in the dicing tape 1 or a dicing die bond film 3 described later. The base material 11 is not particularly limited as long as the stress relaxation rate of the dicing tape 1 and the stress value after 30% stretching 1000 seconds are within a specific range. Examples of the substrate 11 include a plastic substrate (particularly a plastic film). The base material 11 may be a single layer or a laminate of the same or different kinds of base materials.

  Examples of the resin constituting the plastic substrate include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homopolypropylene. , Polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene- Polyolefin resin such as butene copolymer and ethylene-hexene copolymer; Polyurethane; Polyester such as polyethylene terephthalate (PET), polyethylene naphthalate, polybutylene terephthalate (PBT); Polycarbonate; Polyimide; Polyetheretherketone; polyetherimides; aramid, polyamide such as wholly aromatic polyamide; polyphenyl sulfide; fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, and the like. As for the said resin, only 1 type may be used and 2 or more types may be used. When the pressure-sensitive adhesive layer 12 is a radiation curable type as described later, the substrate 11 preferably has radiation transparency.

  When the substrate 11 is a plastic film, the plastic film may be non-oriented or may be oriented in at least one direction (uniaxial direction, biaxial direction, etc.). When oriented in at least one direction, the plastic film can be thermally shrunk in at least one direction. If it has heat shrinkability, it becomes possible to heat shrink the outer peripheral part of the semiconductor wafer of the dicing tape 1, thereby fixing the semiconductor chips with the die-bonded film separated in an expanded state. Therefore, the semiconductor chip can be easily picked up. In order for the base material 11 and the dicing tape 1 to have isotropic heat shrinkability, the base material 11 is preferably a biaxially oriented film. The plastic film oriented in at least one direction can be obtained by stretching an unstretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.). The base material 11 and the dicing tape 1 preferably have a heat shrinkage rate of 1 to 30%, more preferably 2 to 25% in a heat treatment test performed under conditions of a heating temperature of 100 ° C. and a heating time treatment of 60 seconds. More preferably, it is 3 to 20%, particularly preferably 5 to 20%. The heat shrinkage rate is preferably a heat shrinkage rate in at least one direction of the MD direction and the TD direction.

  For example, corona discharge treatment, plasma treatment, sand mat processing, ozone exposure treatment, flame exposure treatment is performed on the surface of the base material 11 on the side of the pressure sensitive adhesive layer 12 in order to improve adhesion and retention with the pressure sensitive adhesive layer 12. , Physical treatment such as high-piezoelectric exposure treatment, ionizing radiation treatment, etc .; chemical treatment such as chromic acid treatment; surface treatment such as easy adhesion treatment with a coating agent (primer) may be applied. Moreover, in order to provide antistatic ability, you may provide the electroconductive vapor deposition layer containing a metal, an alloy, these oxides, etc. on the base material 11 surface.

  Although the base material 11 is not specifically limited, 1000 seconds after extending | stretching 30% on 23 degreeC temperature conditions of the said at least 1 direction (namely, direction where the stress relaxation rate of the dicing tape 1 is 45% or more). The stress relaxation rate is preferably 45% or more, more preferably 50% or more, still more preferably 55% or more, and particularly preferably 60% or more. When the stress relaxation rate of the substrate 11 is 45% or more, it becomes easy to set the stress relaxation rate of the dicing tape 1 to 45% or more, and the floating of the semiconductor chip with the die-bonding film occurs at the time of normal temperature expansion and thereafter. It becomes difficult to do. The upper limit of the stress relaxation rate of the base material 11 is not particularly limited, and the larger the value, the lower the residual stress of the dicing tape 1 is likely to decrease at an early stage. The stress relaxation rate of the substrate 11 can be calculated by measuring the stress value using the substrate 11 instead of the dicing tape 1 in the same manner as the stress relaxation rate of the dicing tape 1 described above.

  Although the base material 11 is not specifically limited, 1000 seconds after extending | stretching 30% on 23 degreeC temperature conditions of the said at least 1 direction (namely, direction where the stress relaxation rate of the dicing tape 1 is 45% or more). The stress value is preferably 4 MPa or less, more preferably 3.8 MPa or less, and still more preferably 3.5 MPa or less. When the stress value is 4 MPa or less, the stress value after 30% stretching of the dicing tape 1 can be easily set to 4 MPa or less, and the floating of the semiconductor chip with the die-bonding film at the time of normal temperature expansion and thereafter is less likely to occur. . The lower limit of the stress value is 0 MPa, and the lower the stress value, the smaller the residual stress of the dicing tape 1, and the lower the stress of the semiconductor chip with the die bond film, which is preferable. The stress value is obtained in the process of calculating the stress relaxation rate of the substrate 11.

  When the initial elastic modulus of the below-described die bond film 2 is high, the substrate 11 is not particularly limited, but is at 23 ° C. in at least one direction (that is, the direction in which the stress relaxation rate of the dicing tape 1 is 45% or more). The stress value when stretched by 30% under temperature conditions (stress value when stretched by 30%) is preferably 5 MPa or more, more preferably 6.5 MPa or more, and even more preferably 8 MPa or more. The upper limit of the stress value is, for example, 30 MPa, preferably 20 MPa, and more preferably 15 MPa. When the stress value is 5 MPa or more, the stress value at 30% stretching of the dicing tape 1 can be easily set to 5 MPa or more, and the semiconductor wafer and the die bond film can be easily cleaved during the cool expansion. The stress value is obtained in the process of calculating the stress relaxation rate of the substrate 11. When the initial elastic modulus of the die bond film 2 is low, the stress value may be less than 5 MPa.

  When the initial elastic modulus of the die bond film 2 described later is high, the substrate 11 is not particularly limited, but the substrate in the at least one direction (that is, the direction in which the stress relaxation rate of the dicing tape 1 is 45% or more). The difference between the stress value at 30% stretching of 11 and the stress value after 1000 seconds of 30% stretching of the substrate 11 [(stress value at 30% stretching) − (stress value after 1000 seconds of 30% stretching)] The pressure is preferably 5 MPa or more, more preferably 5.5 MPa or more, and further preferably 6 MPa or more. When the difference in stress value is 5 MPa or more, the difference in stress value of the dicing tape 1 can be easily set to 5 MPa or more, and stress generated when expanding at room temperature is reduced early. Thereafter, the stress applied to the bottom surface of the die-bonded film-attached semiconductor chip can be suppressed as much as possible, and even when a semiconductor chip having a multi-layered circuit layer is used, floating is less likely to occur during and after normal temperature expansion. The upper limit of the difference between the stress values is not particularly limited, and the larger the larger, the lower the residual stress. Therefore, it is preferable that the semiconductor chip with the die bond film does not easily float. . When the initial elastic modulus of the die bond film 2 is low, the difference in the stress values may be less than 5 MPa.

  Although the thickness of the base material 11 is not specifically limited, For example, it is 5 micrometers or more, Preferably it is 40 micrometers or more, More preferably, it is 50 micrometers or more, More preferably, it is 55 micrometers or more, Most preferably, it is 60 micrometers or more. The upper limit of the thickness is, for example, 200 μm, preferably 180 μm, and more preferably 150 μm. In addition to the stress relaxation rate of the dicing tape 1 and the stress value after 30% stretching 1000 seconds being within a specific range, if the thickness of the substrate 11 is within the above range, stress will be generated during normal temperature expansion. Since the semiconductor chip with a die bond film is easily applied uniformly and the stress is unevenly generated and hardly remains, the semiconductor chip with the die bond film is less likely to float during and after the room temperature expansion.

(Adhesive layer)
The pressure-sensitive adhesive layer 12 is not particularly limited as long as the stress relaxation rate of the dicing tape 1 and the stress value after 1000 seconds of 30% stretching are within a specific range, and a known or conventional pressure-sensitive adhesive layer can be used. .

  The pressure-sensitive adhesive layer 12 is not particularly limited, but preferably has a tensile storage elastic modulus at a temperature condition of 23 ° C. (sometimes referred to as “tensile storage elastic modulus (23 ° C.)”) of 1 to 100 MPa. More preferably, it is 2-30 MPa. When the tensile storage modulus is 1 MPa or more, a semiconductor chip with a die bond film can be more easily picked up at the time of picking up. When the tensile storage elastic modulus is 100 MPa or less, the die-bonded film-attached semiconductor chip from the dicing tape 1 is less likely to be lifted before the pickup after the cool expansion.

  The pressure-sensitive adhesive layer 12 is not particularly limited, but the tensile storage elastic modulus (may be referred to as “tensile storage elastic modulus (−15 ° C.)”) under a temperature condition of −15 ° C. is 5 to 500 MPa. Preferably, it is 10-200 MPa. When the tensile storage modulus is 5 MPa or more, stress can be efficiently transmitted to the die bond film when the semiconductor wafer or the die bond film is cleaved. When the tensile storage elastic modulus is 500 MPa or less, the semiconductor chip with the die-bonding film from the dicing tape 1 is less likely to be lifted from the dicing tape 1 during cool expansion.

  Ratio of the tensile storage modulus (23 ° C.) and the tensile storage modulus (−15 ° C.) of the adhesive layer 12 [(tensile storage modulus (−15 ° C.)) / (Tensile storage modulus (23 ° C.)] ] Is not particularly limited, but is preferably 2 or more, more preferably 4 or more. When the ratio is 2 or more, the die bond film can be further prevented from floating from the dicing tape 1 at the time of cool expansion, and the semiconductor chip with the die bond film can be more easily peeled off from the dicing tape 1 at the time of pickup. It becomes. Moreover, although the said ratio is so preferable that it is large, it is 100 or less from a viewpoint of the balance of pick-up and the ease of cleaving, for example.

The tensile storage elastic modulus (23 ° C.) and the tensile storage elastic modulus (−15 ° C.) are obtained by measuring by the following method for measuring the tensile storage elastic modulus.
<Measurement method of tensile storage modulus>
Using a pressure-sensitive adhesive layer having a thickness of 200 μm, a length of 40 mm (measurement length) and a width of 10 mm as a test piece, using a solid viscoelasticity measuring device, a frequency of 1 Hz, a heating rate of 10 ° C./min, and an initial chuck distance of 22. The tensile storage modulus is measured in a temperature range including 23 ° C. and −15 ° C. under the condition of 5 mm. The values at 23 ° C. and −15 ° C. at that time are read, and the tensile storage elastic modulus (23 ° C.) and the tensile storage elastic modulus (−15 ° C.), respectively.

  The pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 may be a pressure-sensitive adhesive (pressure-sensitive adhesive that can intentionally reduce the pressure-sensitive adhesive force by an external action such as irradiation or heating). The adhesive may be an adhesive (adhesive strength non-reducing adhesive) with little or no reduction in adhesive force depending on the action from the outside, and the individual pieces of the semiconductor wafer that are separated into pieces using the dicing die bond film 3 It can be appropriately selected according to the method and conditions of the conversion.

  In the case where a pressure-reducing adhesive is used as the pressure-sensitive adhesive, in the manufacturing process and use process of the dicing die-bonding film 3, the pressure-sensitive adhesive layer 12 exhibits a relatively high pressure and a relatively low pressure. And can be used properly. For example, when the die bonding film 2 is bonded to the pressure-sensitive adhesive layer 12 of the dicing tape 1 in the manufacturing process of the dicing die-bonding film 3 or when the dicing die-bonding film 3 is used in the dicing process, the pressure-sensitive adhesive layer 12 is relatively high. While it is possible to suppress / prevent floating of the adherend such as the die bond film 2 from the pressure-sensitive adhesive layer 12 using the state showing the adhesive force, the dicing tape 1 to the die bond film of the dicing die bond film 3 is then used. In the pick-up process for picking up the attached semiconductor chip, the pick-up can be easily performed by reducing the adhesive strength of the pressure-sensitive adhesive layer 12.

  Examples of such adhesive pressure-reducing adhesives include radiation curable adhesives (radiation curable adhesives), heat-foaming adhesives, and the like. As the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12, a kind of pressure-reducing adhesive may be used, or two or more kinds of pressure-reducing adhesives may be used. Moreover, the whole adhesive layer 12 may be formed from the adhesive force reduction type adhesive, and one part may be formed from the adhesive force reduction type adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing adhesive, or a predetermined part (for example, a semiconductor wafer) The central area that is the target area) is formed from a pressure-reducing adhesive, and the other part (for example, the target area of the wafer ring that is outside the central area) is not reduced. It may be formed from a mold adhesive.

  As the radiation curable pressure-sensitive adhesive, for example, a pressure-sensitive adhesive that is cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X rays can be used. An adhesive (ultraviolet curable adhesive) can be particularly preferably used.

  Examples of the radiation curable pressure-sensitive adhesive include an addition of a base polymer such as an acrylic polymer and a radiation polymerizable monomer component or oligomer component having a functional group such as a radiation polymerizable carbon-carbon double bond. Type radiation curable pressure sensitive adhesive.

  The acrylic polymer is a polymer including a monomer unit derived from an acrylic monomer (a monomer component having a (meth) acryloyl group in the molecule) as a polymer monomer unit. The acrylic polymer is preferably a polymer containing monomer units derived from (meth) acrylic acid esters as main monomer units having the largest mass ratio. In addition, an acrylic polymer may use only 1 type and may use 2 or more types. Moreover, in this specification, "(meth) acryl" represents "acryl" and / or "methacryl" (any one or both of "acryl" and "methacryl"), and others are the same. .

  Examples of the (meth) acrylic acid ester include hydrocarbon group-containing (meth) acrylic acid esters such as (meth) acrylic acid alkyl esters, (meth) acrylic acid cycloalkyl esters, and (meth) acrylic acid aryl esters. It is done. Examples of the (meth) acrylic acid alkyl ester include (meth) acrylic acid methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl ester, eicosyl ester and the like. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include phenyl ester and benzyl ester of (meth) acrylic acid. As the (meth) acrylic acid ester as the main monomer for the acrylic polymer, only one kind may be used, or two or more kinds may be used. In order to appropriately develop basic characteristics such as adhesiveness by (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, (meth) acrylic acid ester as a main monomer in all monomer components for forming an acrylic polymer is used. The proportion is preferably 40% by mass or more, and more preferably 60% by mass or more.

  The acrylic polymer may contain a monomer unit derived from another monomer component copolymerizable with the (meth) acrylic acid ester for the purpose of modifying cohesive force, heat resistance and the like. Examples of the other monomer components include carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, and acrylonitrile functional groups. Examples thereof include monomers. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, Examples include (meth) acrylic acid 8-hydroxyoctyl, (meth) acrylic acid 10-hydroxydecyl, (meth) acrylic acid 12-hydroxylauryl, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate, and the like. Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate, methyl glycidyl (meth) acrylate, and the like. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate, (meth ) Acrylyloxynaphthalene sulfonic acid and the like. As said phosphate group containing monomer, 2-hydroxyethyl acryloyl phosphate etc. are mentioned, for example. Only one kind of the other monomer components may be used, or two or more kinds may be used. In order to appropriately express basic characteristics such as adhesiveness by (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of the other monomer component to the total monomer components for forming the acrylic polymer is 60 masses. % Or less is preferable, and more preferably 40% by mass or less.

  The acrylic polymer includes a monomer unit derived from a multifunctional monomer copolymerizable with a monomer component such as (meth) acrylic acid ester as a main monomer in order to form a crosslinked structure in the polymer skeleton. May be. Examples of the polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, penta Erythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (for example, polyglycidyl (meth) acrylate), polyester Examples include monomers having a (meth) acryloyl group and other reactive functional groups in the molecule such as (meth) acrylate and urethane (meth) acrylate. The said polyfunctional monomer may use only 1 type, and may use 2 or more types. In order to appropriately express basic characteristics such as adhesiveness due to (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of the polyfunctional monomer in the total monomer components for forming the acrylic polymer is 40 mass. % Or less is preferable, and more preferably 30% by mass or less.

  The acrylic polymer can be obtained by subjecting one or more monomer components including an acrylic monomer to polymerization. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like.

  The number average molecular weight of the acrylic polymer in the pressure-sensitive adhesive layer 12 is preferably 100,000 or more, more preferably 200,000 to 3,000,000. When the number average molecular weight is 100,000 or more, there is a tendency that the low molecular weight substance in the pressure-sensitive adhesive layer is small, and contamination to a die bond film, a semiconductor wafer, or the like can be further suppressed.

  The radiation curable pressure-sensitive adhesive may contain a crosslinking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be cross-linked to further reduce the low molecular weight substance in the pressure-sensitive adhesive layer 12. As said crosslinking agent, a polyisocyanate compound, an epoxy compound, a polyol compound (polyphenol type compound etc.), an aziridine compound, a melamine compound etc. are mentioned, for example. When the crosslinking agent is used, the amount used is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the base polymer.

  Examples of the radiation-polymerizable monomer component include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta ( And (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight of about 100 to 30000 are preferable. The content of the radiation-curable monomer component and oligomer component in the radiation-curable pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 is, for example, 5 to 500 parts by mass, preferably 40 to 100 parts by mass with respect to 100 parts by mass of the base polymer. About 150 parts by mass. Further, as the addition type radiation curable pressure sensitive adhesive, for example, those disclosed in JP-A-60-196956 may be used.

  The radiation-curable pressure-sensitive adhesive is an internal radiation-curing type containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the polymer side chain or at the polymer main chain terminal in the polymer main chain. A mold pressure-sensitive adhesive is also included. When such an internal radiation-curable pressure-sensitive adhesive is used, there is a tendency that an unintended change in the adhesive property due to the movement of a low molecular weight component in the formed pressure-sensitive adhesive layer 12 can be suppressed. .

  As the base polymer contained in the intrinsic radiation curable pressure-sensitive adhesive, an acrylic polymer is preferable. As the acrylic polymer that can be contained in the intrinsic radiation-curable pressure-sensitive adhesive, the acrylic polymer described as the acrylic polymer contained in the additive-type radiation-curable pressure-sensitive adhesive can be employed. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer component having a first functional group was polymerized (copolymerized) to obtain an acrylic polymer. Thereafter, the second functional group capable of reacting with the first functional group and the compound having a radiation-polymerizable carbon-carbon double bond are converted into an acrylic polymer while maintaining the radiation-polymerizable property of the carbon-carbon double bond. Examples of the method include a condensation reaction or an addition reaction.

  Examples of the combination of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, An isocyanate group, a hydroxy group, etc. are mentioned. Among these, a combination of a hydroxy group and an isocyanate group and a combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of easy reaction tracking. Among them, it is technically difficult to prepare a polymer having a highly reactive isocyanate group. On the other hand, from the viewpoint of easy preparation and availability of an acrylic polymer having a hydroxy group, the first functional group is A combination that is a hydroxy group and the second functional group is an isocyanate group is preferable. Examples of the compound having an isocyanate group and a radiation-polymerizable carbon-carbon double bond in this case include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. . In addition, the acrylic polymer having a hydroxy group includes a monomer unit derived from the above-mentioned hydroxy group-containing monomer and an ether compound such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, etc. Is mentioned.

  The radiation curable pressure-sensitive adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, Examples include camphor quinone, halogenated ketone, acyl phosphinoxide, and acyl phosphonate. Examples of the α-ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxy. Examples include propiophenone and 1-hydroxycyclohexyl phenyl ketone. Examples of the acetophenone compound include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2. -Morpholinopropane-1 etc. are mentioned. Examples of the benzoin ether compounds include benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether, and the like. Examples of the ketal compound include benzyldimethyl ketal. As said aromatic sulfonyl chloride type compound, 2-naphthalene sulfonyl chloride etc. are mentioned, for example. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone compounds include benzophenone, benzoylbenzoic acid, 3,3′-dimethyl-4-methoxybenzophenone, and the like. Examples of the thioxanthone compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropyl. Examples include thioxanthone. The content of the photopolymerization initiator in the radiation curable pressure-sensitive adhesive is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer.

  The heat-foaming pressure-sensitive adhesive is a pressure-sensitive adhesive containing a component that foams or expands when heated (foaming agent, thermally expandable microsphere, etc.). Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium borohydride, azides and the like. Examples of the organic foaming agent include chlorofluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide, and barium azodicarboxylate; Hydrazine compounds such as sulfonyl hydrazide, diphenylsulfone-3,3′-disulfonyl hydrazide, 4,4′-oxybis (benzenesulfonyl hydrazide), allyl bis (sulfonyl hydrazide); p-toluylene sulfonyl semicarbazide, 4,4′- Semicarbazide compounds such as oxybis (benzenesulfonyl semicarbazide); Triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole; N, N′-dinitrosopentamethylenetetramine, N, N′-di Chill -N, N-nitroso compounds such as N'- dinitrosoterephthalamide, and the like. Examples of the thermally expandable microsphere include a microsphere having a configuration in which a substance that is easily gasified and expanded by heating is enclosed in a shell. Examples of the substance that easily gasifies and expands by heating include isobutane, propane, pentane, and the like. Thermally expandable microspheres can be produced by encapsulating a substance that expands easily by heating into a shell-forming substance by a coacervation method or an interfacial polymerization method. As the shell-forming substance, a substance exhibiting heat melting property or a substance that can be ruptured by the action of thermal expansion of the encapsulated substance can be used. Examples of such substances include vinylidene chloride / acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone and the like.

  Examples of the non-reducing pressure-sensitive adhesive include a pressure-sensitive adhesive in a form in which the radiation-curable pressure-sensitive adhesive described above with respect to the pressure-reducing adhesive is cured in advance by irradiation with radiation. As the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12, one type of non-reducing adhesive may be used, or two or more types of non-reducing adhesive may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed from a non-reducing adhesive type pressure-sensitive adhesive, or a part thereof may be formed from a non-reducing adhesive type adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a non-adhesive pressure-reducing adhesive, or a predetermined part (for example, wafer ring) in the pressure-sensitive adhesive layer 12 The region to be adhered to, which is outside the central region) is formed from a non-adhesive adhesive, and the other part (for example, the central region to be adhered to the semiconductor wafer) is adhesive. It may be formed from a reduced pressure-sensitive adhesive. Further, when the pressure-sensitive adhesive layer 12 has a laminated structure, all the pressure-sensitive adhesive layers in the laminated structure may be formed from a non-adhesive pressure-reducing adhesive, or some of the pressure-sensitive adhesive layers in the laminated structure It may be formed from a non-reducing adhesive.

  A radiation-cured pressure-sensitive adhesive (cured radiation-cured pressure-sensitive adhesive) in which radiation-cured pressure-sensitive adhesive has been cured in advance by radiation irradiation is adhesive due to the polymer component contained, even if the adhesive strength is reduced by radiation irradiation. It is possible to exhibit the minimum necessary adhesive force for the adhesive layer of the dicing tape in the dicing process or the like. In the case of using a radiation-cured radiation curable pressure-sensitive adhesive, the entire pressure-sensitive adhesive layer 12 may be formed of a radiation-cured radiation-cured pressure-sensitive adhesive in the surface spreading direction of the pressure-sensitive adhesive layer 12. One part may be formed from the radiation-cured adhesive which has been irradiated and the other part may be formed from the radiation-curable adhesive which has not been irradiated.

  As the pressure-sensitive pressure-sensitive adhesive, a known or commonly used pressure-sensitive pressure-sensitive adhesive can be used, and an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive having an acrylic polymer as a base polymer can be preferably used. When the pressure-sensitive adhesive layer 12 contains an acrylic polymer as a pressure-sensitive adhesive, the acrylic polymer is a polymer containing a monomer unit derived from (meth) acrylic acid ester as a main monomer unit having the largest mass ratio. Is preferred. As said acrylic polymer, the acrylic polymer demonstrated as an acrylic polymer contained in the above-mentioned addition type radiation-curable adhesive can be employ | adopted, for example.

  The pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 is a known or conventional pressure-sensitive adhesive such as a crosslinking accelerator, a tackifier, an anti-aging agent, a colorant (pigment, dye, etc.), in addition to the above-described components. Additives used for the agent layer may be blended. As said coloring agent, the compound colored by radiation irradiation is mentioned, for example. When a compound that is colored by irradiation is contained, only the irradiated portion can be colored. The compound colored by radiation irradiation is a compound that is colorless or light-colored before radiation irradiation but becomes colored by radiation irradiation, and examples thereof include leuco dyes. The usage-amount of the compound colored by the said radiation irradiation is not specifically limited, It can select suitably.

  The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but is preferably about 1 to 50 μm, more preferably 2 to 30 μm, more preferably from the viewpoint of compatibility between chipping prevention of the semiconductor chip cut surface and fixing and holding of the die bond film. Preferably it is 5-25 micrometers.

  The dicing tape 1 which is one embodiment of the dicing tape of the present invention is manufactured, for example, as follows. First, the substrate 11 can be obtained by forming a film by a known or conventional film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, it is necessary after forming a coating film by applying a composition (adhesive composition) for forming an adhesive layer including an adhesive and a solvent for forming the adhesive layer 12 on the substrate 11. Accordingly, the pressure-sensitive adhesive layer 12 can be formed by solidifying the coating film by solvent removal or curing. Examples of the application method include known or conventional application methods such as roll coating, screen coating, and gravure coating. Moreover, as solvent removal conditions, it carries out within the range of temperature 80-150 degreeC, time 0.5-5 minutes, for example. Alternatively, the pressure-sensitive adhesive layer 12 may be formed by applying the pressure-sensitive adhesive composition on the separator to form a coating film, and then solidifying the coating film under the above-mentioned solvent removal conditions. Then, the adhesive layer 12 is bonded together with the separator on the base material 11.

  When the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive layer (radiation-curable pressure-sensitive adhesive layer) formed of the radiation-curable pressure-sensitive adhesive, after the die bond film 2 described later is laminated, radiation such as ultraviolet rays is applied to the pressure-sensitive adhesive layer 12. It may be irradiated. Thus, by irradiating with radiation, the adhesive layer 12 can be provided with a portion formed of a non-reducing adhesive (an adhesive obtained by curing a radiation curable adhesive in advance by irradiation). .

[Dicing die bond film]
By laminating a die bond film on the pressure-sensitive adhesive layer in the dicing tape of the present invention, a dicing die-bonding film having a dicing tape of the present invention and a die bond film laminated on the pressure-sensitive adhesive layer of the dicing tape of the present invention (“ May be referred to as “the dicing die-bonding film of the present invention”). In addition, the die-bonding film in the dicing die-bonding film of the present invention can be cleaved by applying a tensile stress, and is preferably used by being cleaved by applying a tensile stress.

  One embodiment of the dicing die-bonding film of the present invention will be described below. FIG. 2 is a schematic cross-sectional view showing an embodiment of the dicing die-bonding film of the present invention.

  As shown in FIG. 2, the dicing die-bonding film 3 includes a dicing tape 1 and a die-bonding film 2 laminated on the pressure-sensitive adhesive layer 12 in the dicing tape 1. The pressure-sensitive adhesive layer 12 shown in FIG. 2 is a radiation curable pressure-sensitive adhesive layer. A portion 12a corresponding to the semiconductor wafer attachment portion of the adhesive layer 12 is a region formed by a non-adhesive pressure-reducing adhesive (a region where the degree of cross-linking increases due to radiation irradiation and the adhesive strength decreases). There is a difference in adhesive strength with the other portion 12b. As a result, the semiconductor wafer before dicing can be sufficiently tightly fixed by the portion 12b through the die bond film 2, and the adhesive strength of the portion 12a is reduced. Can be easily picked up.

  In the pressure-sensitive adhesive layer 12, the portion 12 b is a region formed by a pressure-reducing adhesive, and can be in close contact with the die bond film 2 to ensure a holding force when dicing. Thus, the radiation curable pressure-sensitive adhesive layer can support the die-bonding film 2 for die-bonding a semiconductor chip to an adherend such as a substrate so that both adhesion and peeling can be balanced. In the pressure-sensitive adhesive layer 12 of the dicing die-bonding film 3 shown in FIG. 2, the wafer ring can be fixed to the portion 12b. As shown in FIG. 2, the portion 12 a may be provided in an area slightly smaller than the die bond film 2, or may be provided in all regions in close contact with the die bond film 2.

  In addition, although this embodiment demonstrates the case where the said part 12b which is not covered with the die-bonding film 2 exists in the dicing tape 1, the dicing die-bonding film of this invention is not limited to this example, Dicing tape A die bond film may be laminated on the dicing tape so as to cover the whole. Further, the pressure-sensitive adhesive layer 12 in the dicing die-bonding film 3 is provided with the portion 12a irradiated with radiation and the portion 12b not irradiated with radiation, but the dicing die-bonding film of the present invention is limited to this example. First, the pressure-sensitive adhesive layer may not be irradiated with radiation, or the entire region of the pressure-sensitive adhesive layer may be irradiated with radiation. When the adhesive layer 12 is irradiated with radiation, the radiation irradiation may be performed before or after the lamination of the die bond film 2. When the pressure-sensitive adhesive layer 12 is irradiated with radiation in the dicing die-bonding film 3, there is no need to perform irradiation when picking up a semiconductor chip with a die-bonding film after dicing of the semiconductor wafer, and the number of steps of irradiating the semiconductor chip is reduced. can do.

(Die bond film)
The die bond film 2 has a configuration that can function as an adhesive exhibiting thermosetting for die bonding. In this embodiment, the die-bonding film 2 and the adhesive constituting the die-bonding film 2 may contain a thermosetting resin and, for example, a thermoplastic resin as a binder component, and react with the curing agent to form a bond. A thermoplastic resin having a thermosetting functional group to be obtained may be included. When the adhesive which comprises the die-bonding film 2 contains the thermoplastic resin which has a thermosetting functional group, the said adhesive does not need to contain a thermosetting resin (epoxy resin etc.). The die bond film 2 may have a single layer structure or a multilayer structure.

  When the die bond film 2 includes a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting resin. A polyimide resin etc. are mentioned. Only 1 type may be used for the said thermosetting resin, and 2 or more types may be used for it. An epoxy resin is preferred as the thermosetting resin because it tends to have a low content of ionic impurities that can cause corrosion of the semiconductor chip to be die bonded. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolak type, ortho Examples include cresol novolac type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type, glycidylamine type epoxy resin and the like. Among these, a novolak type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type epoxy resin, and a tetraphenylolethane type epoxy resin are preferable because they are highly reactive with a phenol resin as a curing agent and have excellent heat resistance.

  Examples of the phenol resin that can act as a curing agent for the epoxy resin include novolac-type phenol resins, resol-type phenol resins, and polyoxystyrene such as polyparaoxystyrene. Examples of the novolak type phenol resin include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, and a nonylphenol novolak resin. Only 1 type may be used for the said phenol resin, and 2 or more types may be used for it. Of these, phenol novolac resins and phenol aralkyl resins are preferred from the viewpoint of improving the connection reliability of the adhesive when used as a curing agent for an epoxy resin as an adhesive for die bonding.

  In the die bond film 2, from the viewpoint of sufficiently proceeding the curing reaction between the epoxy resin and the phenol resin, the phenol resin preferably has a hydroxyl group in the phenol resin per equivalent of epoxy groups in the epoxy resin component. It is contained in an amount of 5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

  When the die bond film 2 contains a thermosetting resin, the content ratio of the thermosetting resin is the total mass of the die bond film 2 from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the die bond film 2. On the other hand, 5-60 mass% is preferable, More preferably, it is 10-50 mass%.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, and polycarbonate resin. , Thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. The said thermoplastic resin may use only 1 type, and may use 2 or more types. As the thermoplastic resin, an acrylic resin is preferable because it has few ionic impurities and has high heat resistance, so that it is easy to ensure the bonding reliability of the die-bonding film 2.

  The acrylic resin is preferably a polymer containing monomer units derived from (meth) acrylic acid esters as main monomer units having the largest mass ratio. Examples of the (meth) acrylic acid esters include (meth) acrylic acid esters exemplified as (meth) acrylic acid esters that form an acrylic polymer that can be contained in the above-described additive-type radiation-curable pressure-sensitive adhesive. It is done. The acrylic resin may contain a monomer unit derived from another monomer component copolymerizable with (meth) acrylic acid ester. Examples of the other monomer components include, for example, carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, acrylonitrile, and other functional groups. Monomers, various polyfunctional monomers, and the like are specifically exemplified as other monomer components constituting an acrylic polymer that can be included in the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 described above. Can be used. From the viewpoint of realizing a high cohesive force in the die bond film 2, the acrylic resin is preferably a (meth) acrylic acid ester (particularly, a (meth) acrylic acid alkyl ester having an alkyl group having 4 or less carbon atoms). , A carboxy group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (particularly polyglycidyl polyfunctional monomer), more preferably ethyl acrylate, butyl acrylate, and acrylic acid And a copolymer of acrylonitrile and polyglycidyl (meth) acrylate.

  When the die bond film 2 includes a thermoplastic resin having a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin in this thermosetting functional group-containing acrylic resin preferably contains a monomer unit derived from (meth) acrylic acid ester as the main monomer unit having the largest mass ratio. Examples of the (meth) acrylic acid esters include (meth) acrylic acid esters exemplified as (meth) acrylic acid esters that form an acrylic polymer that can be contained in the above-described additive-type radiation-curable pressure-sensitive adhesive. It is done. On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Among these, a glycidyl group and a carboxy group are preferable. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin and a carboxy group-containing acrylic resin are particularly preferable. Moreover, it is preferable that a hardening | curing agent is included with a thermosetting functional group containing acrylic resin, and as said hardening | curing agent, it is illustrated, for example as a crosslinking agent which can be contained in the above-mentioned radiation-curing-type adhesive for adhesive layer 12 formation. Can be mentioned. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol compound as the curing agent, and for example, the various phenol resins described above can be used.

  In order to achieve a certain degree of crosslinking with respect to the die bond film 2 before being cured for die bonding, for example, it reacts with a functional group at the end of the molecular chain of the resin that can be included in the die bond film 2. It is preferable that a polyfunctional compound that can be bonded is blended in the resin composition for forming a die bond film as a crosslinking component. Such a configuration is preferable for the die bond film 2 from the viewpoint of improving adhesive properties at high temperatures and from the viewpoint of improving heat resistance. Examples of the crosslinking component include polyisocyanate compounds. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, adducts of polyhydric alcohol and diisocyanate, and the like. The content of the crosslinking component in the resin composition for forming a die bond film is from the viewpoint of improving the cohesive strength of the formed die bond film 2 with respect to 100 parts by mass of the resin having the functional group that can react and bond with the crosslinking component. Is preferably 0.05 parts by mass or more, and preferably 7 parts by mass or less from the viewpoint of improving the adhesive strength of the die bond film 2 to be formed. Moreover, as said crosslinking component, you may use together other polyfunctional compounds, such as an epoxy resin, with a polyisocyanate compound.

  The die bond film 2 may contain a filler. By blending the filler into the die bond film 2, physical properties such as conductivity, thermal conductivity, and elastic modulus of the die bond film 2 can be adjusted. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are particularly preferable. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystal In addition to porous silica and amorphous silica, simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon black, graphite and the like can be mentioned. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. As said filler, only 1 type may be used and 2 or more types may be used.

  The average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. When the average particle size is 0.005 μm or more, wettability and adhesion to an adherend such as a semiconductor wafer are further improved. When the average particle size is 10 μm or less, the effect of the filler added for imparting the above properties can be made sufficient, and heat resistance can be ensured. The average particle size of the filler can be determined using, for example, a photometric particle size distribution meter (for example, trade name “LA-910”, manufactured by Horiba, Ltd.).

  The die bond film 2 may contain other components as necessary. As said other component, a flame retardant, a silane coupling agent, an ion trap agent etc. are mentioned, for example. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, hydrous antimony (for example, “IXE? 300” manufactured by Toa Gosei Co., Ltd.), zirconium phosphate having a specific structure (for example, Toa Gosei Co., Ltd.) "IXE? 100"), magnesium silicate (for example, "Kyoward 600" manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (for example, "Kyoword 700" manufactured by Kyowa Chemical Industry Co., Ltd.), etc. Can be mentioned. A compound capable of forming a complex with a metal ion can also be used as an ion trapping agent. Examples of such compounds include triazole compounds, tetrazole compounds, and bipyridyl compounds. Among these, a triazole compound is preferable from the viewpoint of the stability of a complex formed with a metal ion. Examples of such triazole compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, and 2- (2-hydroxy- 5-methylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-tert-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-tert-butyl-5-methylphenyl) ) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) benzotriazole, 6- (2 -Benzotriazolyl) -4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebi Phenol, 1- (2 ′, 3′-hydroxypropyl) benzotriazole, 1- (1,2-dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t -Pentyl-6-{(H-benzotriazol-1-yl) methyl} phenol, 2- (2-hydroxy-5-t-butylphenyl) -2H-benzotriazole, C7-C9-alkyl-3- [3 -(2H-benzotriazol-2-yl) -5- (1,1-dimethylethyl) -4-hydroxyphenyl] propion ether, octyl-3- [3-t-butyl-4-hydroxy-5- (5 -Chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2-ethylhexyl-3- [3-t-butyl- -Hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2- (2H-benzotriazol-2-yl) -6- (1-methyl-1-phenylethyl) -4 -(1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazol-2-yl) -4-t-butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) -benzotriazole, 2- (3-t-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy- 3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chloro- Benzotriazole, 2- [2-hydroxy-3,5-di (1,1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2′-methylenebis [6- (2H-benzotriazol-2-yl) -4- (1,1,3,3-tetramethylbutyl) phenol], 2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H-benzotriazole, methyl-3 ? [3- (2H-benzotriazol-2-yl) -5-t-butyl-4-hydroxyphenyl] propionate and the like. In addition, a predetermined hydroxyl group-containing compound such as a quinol compound, a hydroxyanthraquinone compound, or a polyphenol compound can also be used as an ion trapping agent. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthralphine, tannin, gallic acid, methyl gallate, and pyrogallol. Only one kind of the other additives may be used, or two or more kinds thereof may be used.

  Although the thickness (in the case of a laminated body) of the die-bonding film 2 is not specifically limited, For example, it is 1-200 micrometers. The upper limit is preferably 100 μm, more preferably 80 μm. The lower limit is preferably 3 μm, more preferably 5 μm.

  The die bond film 2 preferably has a glass transition temperature (Tg) of 0 ° C. or higher, more preferably 10 ° C. or higher. When the glass transition temperature is 0 ° C. or higher, the die bond film 2 can be easily cleaved by the cool expand. The upper limit of the glass transition temperature of the die bond film 2 is, for example, 100 ° C.

  The die bond film 2 is not particularly limited, but the tensile storage modulus (23 ° C.) is preferably 5 to 3000 MPa, more preferably 10 to 1000 MPa. When the tensile storage elastic modulus is 5 MPa or more, the semiconductor chip with the die bond film 2 can be more easily picked up at the time of picking up. When the tensile storage elastic modulus is 3000 MPa or less, the die bond film 2 is less likely to be lifted from the dicing tape 1 before the cool expansion and before the pickup.

  The die bond film 2 is not particularly limited, but the tensile storage modulus (−15 ° C.) is preferably 1 to 10 GPa, more preferably 2 to 5 GPa. When the tensile storage elastic modulus is 1 GPa or more, the die bond film 2 can be more easily cleaved by the cool expand. When the tensile storage elastic modulus is 10 GPa or less, it is possible to make it difficult for the die bond film 2 to float from the dicing tape 1 during cool expansion.

  Ratio of the tensile storage modulus (23 ° C.) and the tensile storage modulus (−15 ° C.) of the die bond film 2 [(tensile storage modulus (−15 ° C.)) / (Tensile storage modulus (23 ° C.)]] Is not particularly limited, but is preferably 2 or more, more preferably 30 or more. When the ratio is 2 or more, the die bond film 2 can be further prevented from floating from the dicing tape 1 during cool expansion, and the semiconductor chip with the die bond film 2 can be more easily peeled from the dicing tape 1 during pick-up. It becomes possible. Moreover, although the said ratio is so preferable that it is large, it is 300 or less from a viewpoint of the balance of pick-up and the ease of cleaving, for example.

  In addition, the said tensile storage elastic modulus (23 degreeC) and the said tensile storage elastic modulus (-15 degreeC) of the die bond film 2 are the above-mentioned adhesive layer 12 except using a die bond film instead of an adhesive layer, for example. It can be measured in the same manner as the tensile storage modulus (23 ° C.) and the tensile storage modulus (−15 ° C.).

  As shown in FIG. 2, the die-bonding film 2 includes a single-layer die-bonding film. Note that in this specification, a single layer refers to a layer having the same composition, and includes a layer in which a plurality of layers having the same composition are stacked. However, the die bond film in the dicing die bond film of the present invention is not limited to this example, and may be, for example, a multilayer structure in which two or more types of adhesive films having different compositions are laminated.

  Although the dicing die-bonding film 3 is not specifically limited, It is preferable that the peeling force in the 0 degreeC between the adhesive layer 12 and the die-bonding film 2 is 0.15-5N / 100mm, More preferably, it is 0.20. 1 N / 100 mm. When the peeling force is 0.15 N / 100 mm or more, peeling at the interface between the die bond film 2 and the pressure-sensitive adhesive layer 12 at the time of cool expansion is less likely to occur, and as a result, cleaving defects and cleaved semiconductor elements are scattered. It is possible to further suppress the occurrence of malfunctions. When the peeling force is 5 N / 100 mm or less, the occurrence of cleaving failure due to the excessively high peeling force can be further suppressed. In the case where the pressure-sensitive adhesive layer 12 is a radiation curable pressure-sensitive adhesive layer, the peeling force (for example, the pressure-sensitive adhesive layer 12 in the portion 12a) after irradiation (that is, a region formed by a pressure-sensitive adhesive non-reducing pressure-sensitive adhesive). And the die bond film 2 are preferably within the above range.

  Although the dicing die-bonding film 3 is not specifically limited, It is preferable that the peeling force in 23 degreeC between the adhesive layer 12 and the die-bonding film 2 is 0.05-2.5N / 100mm, More preferably, it is 0.00. 10 to 1 N / 100 mm. When the peeling force is 0.05 N / 100 mm or more, the semiconductor chip with a die-bonding film during transportation can be made more difficult to float. If the peeling force is 2.5 N / 100 mm or less, recent thinned semiconductor chips are easily broken, so even such a semiconductor wafer exhibits good light peelability and can be easily picked up. can do. In the case where the pressure-sensitive adhesive layer 12 is a radiation curable pressure-sensitive adhesive layer, the peeling force (for example, the pressure-sensitive adhesive layer 12 in the portion 12a) after irradiation (that is, a region formed by a pressure-sensitive adhesive non-reducing pressure-sensitive adhesive). And the die bond film 2 are preferably within the above range.

  The dicing die bond film 3 which is one embodiment of the dicing die bond film of the present invention is manufactured as follows, for example. First, the composition (adhesive composition) which forms the die-bonding film 2 containing resin, a crosslinking agent, a filler, a solvent, etc. is produced.

  Next, the adhesive composition is applied onto the separator to form a coating film, and then the coating film is solidified by solvent removal, curing, or the like as necessary to form the die bond film 2. It does not specifically limit as a coating method, For example, well-known thru | or usual coating methods, such as roll coating, screen coating, and gravure coating, are mentioned. Moreover, as solvent removal conditions, it carries out within the range of temperature 70-160 degreeC, time 1-5 minutes, for example.

  Subsequently, the separator is peeled off from the dicing tape 1 and the die bond film 2 respectively, and the die bond film 2 and the pressure-sensitive adhesive layer 12 are bonded to each other so that they are bonded to each other. Bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and for example, 30 to 50 ° C. is preferable, and 35 to 45 ° C. is more preferable. Moreover, a linear pressure is not specifically limited, For example, 0.1-20 kgf / cm is preferable, More preferably, it is 1-10 kgf / cm.

  As described above, when the pressure-sensitive adhesive layer 12 is a radiation curable pressure-sensitive adhesive layer, when the pressure-sensitive adhesive layer 12 is irradiated with radiation such as ultraviolet rays after the die-bonding film 2 is bonded, for example, the pressure-sensitive adhesive layer 12 is bonded from the substrate 11 side. The agent layer 12 is irradiated with radiation, and the irradiation amount is, for example, 50 to 500 mJ, and preferably 100 to 300 mJ.

  Irradiation is usually performed on the part of the pressure-sensitive adhesive layer 12 corresponding to the part 12a. In the case of forming the portion 12a by partially irradiating, it can be performed through a photomask on which a pattern corresponding to the portion 12b is formed. Moreover, the method of irradiating a spot-like radiation and forming the said part 12a is also mentioned.

  As described above, for example, the dicing die-bonding film 3 shown in FIG. 2 can be produced. The dicing die bond film 3 may be provided with a separator (not shown) on the die bond film 2 side so as to cover at least the die bond film 2. When the die bond film 2 is smaller than the pressure-sensitive adhesive layer 12 of the dicing tape 1 and there is a region where the die-bonding film 2 is not bonded in the pressure-sensitive adhesive layer 12, for example, the separator is formed of the die bond film 2 and the pressure-sensitive adhesive layer 12. It may be provided in the form of covering at least. The separator is an element for protecting at least the die bond film 2 (for example, the die bond film 2 and the pressure-sensitive adhesive layer 12) from being exposed. When the dicing die bond film 3 is used, the separator is peeled off from the film. Examples of the separator include a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, and a plastic film or paper whose surface is coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate-type release agent. .

[Method for Manufacturing Semiconductor Device]
A semiconductor device can be manufactured using the dicing die-bonding film of the present invention. Specifically, a process of attaching a semiconductor wafer divided body including a plurality of semiconductor chips or a semiconductor wafer that can be singulated to a plurality of semiconductor chips to the die bond film side of the dicing die bond film of the present invention ("process" A ”), and the dicing tape of the present invention in the dicing die-bonding film of the present invention is expanded under relatively low temperature conditions, and at least the die-bonding film is cleaved to obtain a semiconductor chip with a die-bonding film. A step of obtaining (sometimes referred to as “step B”), a step of expanding the dicing tape under relatively high temperature conditions, and expanding the interval between the semiconductor chips with the die bond film (“step C”). The semiconductor chip with the die-bonding film is pinned. By a production method including the up step (hereinafter sometimes referred to as "Step D"), it is possible to manufacture a semiconductor device. In addition, the manufacturing method of the semiconductor device including the steps A to D may be referred to as “the manufacturing method of the present invention”.

(Process A)
In the process A, a semiconductor wafer divided body including a plurality of semiconductor chips or a semiconductor wafer that can be separated into a plurality of semiconductor chips is attached to the die bonding film 2 side of the dicing die bond film 3. In the semiconductor wafer divided body including the plurality of semiconductor chips used in step A, for example, a groove is formed on the front surface (circuit layer forming surface or non-circuit layer forming surface) of the semiconductor wafer, and then the groove appears on the back surface. It can be obtained by back grinding.

  A divided body of a semiconductor wafer including the plurality of semiconductor chips used in one embodiment in step A or a semiconductor wafer that can be singulated into a plurality of semiconductor chips can be obtained as follows. First, as shown in FIGS. 3A and 3B, the division grooves 30a are formed in the semiconductor wafer W (division groove formation step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. Has been. Then, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the first wafer W is held in the state where the semiconductor wafer W is held on the wafer processing tape T1. A dividing groove 30a having a predetermined depth is formed on the surface Wa side using a rotating blade such as a dicing apparatus. The dividing groove 30a is a gap for separating the semiconductor wafer W into semiconductor chips (in FIG. 3 to FIG. 5, the dividing groove 30a is schematically represented by a thick line).

  Next, as shown in FIG. 3C, the wafer processing tape T2 having the adhesive surface T2a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 from the semiconductor wafer W is bonded. And peeling off.

  Next, as shown in FIG. 3 (d), the semiconductor wafer W is held by the wafer processing tape T2 and thinned by grinding from the second surface Wb until the semiconductor wafer W reaches a predetermined thickness. (Wafer thinning process). Grinding can be performed using a grinding apparatus equipped with a grinding wheel. By this wafer thinning step, in this embodiment, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips 31 is formed. Specifically, the semiconductor wafer 30A has a portion (connecting portion) for connecting, on the second surface Wb side, a portion to be separated into a plurality of semiconductor chips 31 on the wafer. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 μm, preferably 3 to 20 μm. It is.

  Next, as shown in FIG. 4A, the semiconductor wafer 30 </ b> A held on the wafer processing tape T <b> 2 is bonded to the die bond film 2 of the dicing die bond film 3. Thereafter, as shown in FIG. 4B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die-bonding film 3 is a radiation curable pressure-sensitive adhesive layer, the semiconductor wafer 30A is bonded to the die-bonding film 2 in place of the above-described radiation irradiation in the manufacturing process of the dicing die-bonding film 3. After that, the adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the substrate 11 side. The irradiation amount is, for example, 50 to 500 mJ, and preferably 100 to 300 mJ. In the dicing die-bonding film 3, the region (part 12 a shown in FIG. 1) on which the pressure-sensitive adhesive layer 12 is irradiated as a measure for reducing the adhesive strength is, for example, the peripheral portion in the die-bonding film 2 bonding region in the pressure-sensitive adhesive layer 12. Excluded area.

(Process B)
In step B, the dicing tape 1 in the dicing die bond film 3 is expanded under relatively low temperature conditions, and at least the die bond film 2 is cleaved to obtain a semiconductor chip with a die bond film.

  In one embodiment in the process B, first, after attaching the ring frame 41 on the adhesive layer 12 of the dicing tape 1 in the dicing die bond film 3, as shown in FIG. The dicing die bond film 3 is fixed to the holder 42 of the expanding device.

  Next, a first expanding process (cool expanding process) under relatively low temperature conditions is performed as shown in FIG. 5B to separate the semiconductor wafer 30A into a plurality of semiconductor chips 31. Then, the die-bonding film 2 of the dicing die-bonding film 3 is cut into small pieces of the die-bonding film 21 to obtain a semiconductor chip 31 with a die-bonding film. In the cool expanding step, the hollow cylindrical push-up member 43 provided in the expanding device is brought into contact with the dicing tape 1 on the lower side of the dicing die bond film 3 in the drawing and is raised so that the dicing die bond film 3 to which the semiconductor wafer 30A is bonded is attached. The dicing tape 1 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed under conditions that cause a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa in the dicing tape 1. The temperature condition in the cool expanding step is, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed for raising the push-up member 43) in the cool expanding process is preferably 0.1 to 100 mm / sec. The amount of expansion in the cool expanding step is preferably 3 to 16 mm.

  In the process B, when the semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips is used, the thin portion of the semiconductor wafer 30A that is easily broken can be cleaved, resulting in singulation into the semiconductor chips 31. At the same time, in step B, deformation is suppressed in each region where each semiconductor chip 31 is in close contact with the die bond film 2 in close contact with the adhesive layer 12 of the dicing tape 1 to be expanded, while the semiconductor chip 31 is suppressed. A tensile stress generated in the dicing tape 1 acts on a portion of the dividing groove between the dicing tape 1 in a state where the deformation groove does not have such a deformation suppressing action. As a result, the part located in the perpendicular direction of the dividing groove between the semiconductor chips 31 in the die bond film 2 is cleaved. After the cleaving by the expand, as shown in FIG. 5C, the push-up member 43 is lowered to release the expanded state in the dicing tape 1.

(Process C)
In step C, the dicing tape 1 is expanded under relatively high temperature conditions to widen the gap between the semiconductor chips with the die bond film.

  In one embodiment in Step C, first, a second expanding step (room temperature expanding step) under relatively high temperature conditions is performed as shown in FIG. Increase the (separation distance). In step C, the hollow cylindrical push-up member 43 provided in the expanding device is raised again, and the dicing tape 1 of the dicing die-bonding film 3 is expanded. The temperature condition in the second expanding step is, for example, 10 ° C. or higher, and preferably 15 to 30 ° C. The expansion speed (speed at which the push-up member 43 is raised) in the second expanding step is, for example, 0.1 to 10 mm / second, and preferably 0.3 to 1 mm / second. Moreover, the amount of expansion in the second expanding step is, for example, 3 to 16 mm. In step C, the separation distance of the semiconductor chip 31 with the die bond film is increased to such an extent that the semiconductor chip 31 with the die bond film can be appropriately picked up from the dicing tape 1 in a pickup process described later. After expanding the separation distance by the expand, the push-up member 43 is lowered as shown in FIG. 6B to release the expanded state in the dicing tape 1. From the viewpoint of suppressing the separation distance of the semiconductor chip 31 with the die-bonding film on the dicing tape 1 after the expanded state is released, the portion outside the holding region of the semiconductor chip 31 in the dicing tape 1 is removed before the expanded state is released. It is preferable to shrink by heating.

  After step C, the semiconductor chip 31 side of the dicing tape 1 with the semiconductor chip 31 with the die bond film may be cleaned as necessary using a cleaning liquid such as water.

(Process D)
In step D (pickup step), the separated semiconductor chip with a die bond film is picked up. In one embodiment in the process D, the semiconductor chip 31 with the die bond film is picked up from the dicing tape 1 as shown in FIG. For example, a semiconductor chip 31 with a die bond film to be picked up is lifted through the dicing tape 1 by raising the pin member 44 of the pickup mechanism on the lower side of the dicing tape 1 in the figure, and then sucked and held by the suction jig 45. . In the pickup process, the pushing speed of the pin member 44 is, for example, 1 to 100 mm / second, and the pushing amount of the pin member 44 is, for example, 100 to 500 μm.

  The manufacturing method of the semiconductor device may include processes other than the processes A to D. For example, in one embodiment, as shown in FIG. 8A, the picked-up semiconductor chip 31 with the die bond film is temporarily fixed to the adherend 51 via the die bond film 21 (temporary fixing step). Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive strength at 25 ° C. when the die-bonding film 21 is temporarily fixed is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 51. The configuration in which the shear bonding force of the die bond film 21 is 0.2 MPa or more causes shearing at the bonding surface between the die bond film 21 and the semiconductor chip 31 or the adherend 51 by ultrasonic vibration or heating in a wire bonding step described later. It is possible to appropriately perform wire bonding while suppressing deformation. Moreover, 0.01 MPa or more with respect to the to-be-adhered body 51 is preferable, and, more preferably, it is 0.01-5 MPa with respect to the to-be-adhered body 51 at the time of temporarily adhering the die-bonding film 21.

  Next, as shown in FIG. 8B, the electrode pads (not shown) of the semiconductor chip 31 and the terminal portions (not shown) of the adherend 51 are electrically connected via bonding wires 52 ( Wire bonding process). The connection between the electrode pad of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 can be realized by ultrasonic welding with heating, and is performed so as not to thermoset the die bond film 21. As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The wire heating temperature in wire bonding is, for example, 80 to 250 ° C, and preferably 80 to 220 ° C. The heating time is several seconds to several minutes.

  Next, as shown in FIG. 8C, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wire 52 on the adherend 51 (sealing step). In the sealing step, thermosetting of the die bond film 21 proceeds. In the sealing step, for example, the sealing resin 53 is formed by a transfer molding technique performed using a mold. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In the sealing step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. When the curing of the sealing resin 53 does not proceed sufficiently in the sealing process, a post-curing process for completely curing the sealing resin 53 is performed after the sealing process. Even if the die bond film 21 is not completely thermoset in the sealing process, the die bond film 21 can be completely cured together with the sealing resin 53 in the post-curing process. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C., and the heating time is, for example, 0.5 to 8 hours.

  In the above embodiment, as described above, after the semiconductor chip 31 with the die bond film is temporarily fixed to the adherend 51, the wire bonding step is performed without completely thermosetting the die bond film 21. Instead of such a configuration, in the method for manufacturing a semiconductor device, the semiconductor chip 31 with the die bond film is temporarily fixed to the adherend 51, and then the wire bonding process is performed after the die bond film 21 is thermally cured. Good.

  In the semiconductor device manufacturing method, as another embodiment, the wafer thinning step shown in FIG. 9 may be performed instead of the wafer thinning step described above with reference to FIG. After the process described above with reference to FIG. 3C, in the wafer thinning step shown in FIG. 9, the wafer is reduced to a predetermined thickness while the semiconductor wafer W is held on the wafer processing tape T2. The semiconductor wafer divided body 30 </ b> B including the plurality of semiconductor chips 31 and held on the wafer processing tape T <b> 2 is thinned by grinding from the second surface Wb. In the wafer thinning step, a technique of grinding the wafer (first technique) until the dividing groove 30a is exposed on the second surface Wb side may be employed, or the dividing groove 30a may be reached from the second surface Wb side. A method of grinding the wafer to the front and then forming a semiconductor wafer divided body 30B by generating a crack between the divided groove 30a and the second surface Wb by the action of the pressing force from the rotating grindstone to the wafer (second) May be adopted. Depending on the method employed, the depth from the first surface Wa of the dividing groove 30a formed as described above with reference to FIGS. 3A and 3B is appropriately determined. In FIG. 9, the dividing groove 30a that has undergone the first technique or the dividing groove 30a that has undergone the second technique and cracks connected thereto are schematically represented by thick lines. In the manufacturing method of the semiconductor device, in step A, the semiconductor wafer divided body 30B thus manufactured is used instead of the semiconductor wafer 30A as the semiconductor wafer divided body, and each of the above-described semiconductor devices 30B described above with reference to FIGS. You may perform a process.

  FIG. 10A and FIG. 10B show a first expanding process (cool expanding process) performed after the process B in the embodiment, that is, the semiconductor wafer divided body 30 </ b> B is bonded to the dicing die bond film 3. In the process B in the embodiment, the hollow cylindrical push-up member 43 provided in the expanding device is brought into contact with the dicing tape 1 on the lower side of the dicing die-bonding film 3 in the drawing, and is bonded to the semiconductor wafer divided body 30B. The dicing tape 1 of the dicing die bond film 3 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B. This expansion is performed under conditions that cause a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa in the dicing tape 1. The temperature condition in the cool expanding step is, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed for raising the push-up member 43) in the cool expanding process is preferably 1 to 400 mm / sec. The amount of expansion in the cool expanding step is preferably 1 to 300 mm. By such a cool expanding process, the die-bonding film 2 of the dicing die-bonding film 3 is cut into small pieces of the die-bonding film 21 to obtain a semiconductor chip 31 with a die-bonding film. Specifically, in the cool expanding process, in the die bond film 2 in close contact with the adhesive layer 12 of the dicing tape 1 to be expanded, deformation is caused in each region where the semiconductor chips 31 of the semiconductor wafer divided body 30B are in close contact. On the other hand, the tensile stress generated in the dicing tape 1 acts on the portion of the dividing groove 30a between the semiconductor chips 31 located in the vertical direction in the drawing in a state where such a deformation suppressing action does not occur. As a result, in the die-bonding film 2, the part located in the vertical direction in the drawing of the dividing groove 30a between the semiconductor chips 31 is cleaved.

  In the semiconductor device manufacturing method, as still another embodiment, a semiconductor wafer 30C manufactured as follows may be used instead of the semiconductor wafer 30A or the semiconductor wafer divided body 30B used in the step A. .

In this embodiment, as shown in FIGS. 11A and 11B, first, the modified region 30b is formed in the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. Has been. Then, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, the condensing point is held inside the wafer while the semiconductor wafer W is held on the wafer processing tape T3. Is applied to the semiconductor wafer W along the planned dividing line from the side opposite to the wafer processing tape T3, and modified into the semiconductor wafer W due to ablation by multiphoton absorption. Region 30b is formed. The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor chips. The method for forming the modified region 30b on the division line by laser light irradiation in the semiconductor wafer is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. The laser light irradiation conditions in the embodiment are, for example, It adjusts suitably within the range of the following conditions.
<Laser irradiation conditions>
(A) Laser light
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross section 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse
Repeat frequency 100 kHz or less
Pulse width 1μs or less
Output 1mJ or less
Laser light quality TEM00
Polarization characteristics Linearly polarized (B) condensing lens
Magnification 100 times or less
NA 0.55
Transmittance with respect to laser light wavelength: 100% or less (C) Moving speed of the table on which the semiconductor substrate is placed 280 mm / sec or less Note that the modified region 4L is formed on the division line by irradiating the laser light L Is described in detail in Japanese Patent Application Laid-Open No. 2002-192370 and the like, and detailed description thereof is omitted here.

  Next, as shown in FIG. 11C, the semiconductor wafer W is held by the wafer processing tape T3 and thinned by grinding from the second surface Wb until the semiconductor wafer W reaches a predetermined thickness. Thus, a semiconductor wafer 30C that can be singulated into a plurality of semiconductor chips 31 is formed (wafer thinning step). In the semiconductor device manufacturing method, in step A, the semiconductor wafer 30C thus manufactured as a semiconductor wafer that can be singulated is used in place of the semiconductor wafer 30A, and has been described above with reference to FIGS. You may perform each process.

  As a specific example, FIGS. 12A and 12B show a process B in the embodiment, that is, a first expanding process (cool expanding process) performed after the semiconductor wafer 30C is bonded to the dicing die bond film 3. FIG. . In the cool expanding step, the hollow cylindrical push-up member 43 provided in the expanding device is brought into contact with the dicing tape 1 on the lower side of the dicing die bond film 3 in the drawing and is raised so that the dicing die bond film 3 to which the semiconductor wafer 30C is bonded is attached. The dicing tape 1 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expansion is performed under conditions that cause a tensile stress in the range of 5 to 28 MPa, preferably 8 to 25 MPa in the dicing tape 1. The temperature condition in the cool expanding step is, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed for raising the push-up member 43) in the cool expanding process is preferably 1 to 400 mm / sec. The amount of expansion in the cool expanding step is preferably 1 to 300 mm. By such a cool expanding process, the die-bonding film 2 of the dicing die-bonding film 3 is cut into small pieces of the die-bonding film 21 to obtain a semiconductor chip 31 with a die-bonding film. Specifically, in the cool expanding process, cracks are formed in the fragile modified region 30b in the semiconductor wafer 30C, and separation into the semiconductor chips 31 occurs. At the same time, in the cool expanding process, in the die bond film 2 in close contact with the adhesive layer 12 of the dicing tape 1 to be expanded, deformation is suppressed in each region where the semiconductor chips 31 of the semiconductor wafer 30C are in close contact. On the other hand, tensile stress generated in the dicing tape 1 is applied to a portion of the wafer where the crack is formed in the vertical direction in the drawing in a state where such a deformation suppressing action does not occur. As a result, in the die-bonding film 2, a portion of the crack formation portion between the semiconductor chips 31 that is positioned in the vertical direction in the drawing is cleaved.

  In the method for manufacturing a semiconductor device, the dicing die-bonding film 3 can be used for the purpose of obtaining a semiconductor chip with a die-bonding film as described above. However, when a plurality of semiconductor chips are stacked for three-dimensional mounting. It can also be used in applications for obtaining a semiconductor chip with a die bond film. Between the semiconductor chips 31 in such three-dimensional mounting, a spacer may be interposed together with the die bond film 21, or a spacer may not be interposed.

  EXAMPLES Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.

Example 1
(Production of dicing tape)
In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirring device, 100 parts by mass of 2-ethylhexyl acrylate (2EHA), 19 parts by mass of 2-hydroxyethyl acrylate (HEA), benzoyl peroxide 4 parts by mass and 80 parts by mass of toluene were added, and polymerization was carried out in a nitrogen stream at 60 ° C. for 10 hours to obtain a solution containing acrylic polymer A.
A solution containing acrylic polymer A ′ is prepared by adding 1.2 parts by weight of 2-methacryloyloxyethyl isocyanate (MOI) to the solution containing acrylic polymer A and performing an addition reaction at 50 ° C. for 60 hours in an air stream. Got.
Next, with respect to 100 parts by mass of the acrylic polymer A ′, 1.3 parts by mass of a polyisocyanate compound (trade name “Coronate L”, manufactured by Tosoh Corporation), and a photopolymerization initiator (trade name “Irgacure 184”, 3 parts by mass of BASF (manufactured by BASF) was added to prepare an adhesive composition A.
The obtained pressure-sensitive adhesive composition A was applied on the surface of the PET separator that had been subjected to silicone treatment, and heated and solidified at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer A having a thickness of 10 μm. Next, a polyvinyl chloride film (trade name “V9K”, manufactured by Achilles Co., Ltd., thickness 100 μm) is bonded to the exposed surface of the pressure-sensitive adhesive layer A and stored at 23 ° C. for 72 hours, followed by dicing. Tape A was produced.

(Production of die bond film)
The following (a) to (e) were dissolved in methyl ethyl ketone to obtain an adhesive composition A having a solid content concentration of 20% by mass.
(A) Acrylic resin (trade name “SG-70L”, manufactured by Nagase ChemteX Corporation, glass transition temperature 4 ° C.): 100 parts by mass (solid content)
(B) Epoxy resin (trade name “N-655-EXP-S”, manufactured by DIC Corporation): 13 parts by mass (c) Epoxy resin (trade name “JER828”, manufactured by Mitsubishi Chemical Corporation): 13 masses Part (d) Phenol resin (trade name “MEH-7851ss” manufactured by Meiwa Kasei Co., Ltd.): 119 parts by mass (e) Spherical silica (trade name “SO-25R” manufactured by Admatechs Co., Ltd.): 222 mass Part

  The obtained adhesive composition A was applied on the surface of the PET separator that had been subjected to the silicone treatment, and then was solidified by heating at 130 ° C. for 2 minutes to prepare a die bond film A having a thickness (average thickness) of 10 μm. .

(Production of dicing die bond film)
The PET separator was peeled from the dicing tape A, and the die bond film A was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for pasting. Next, 300 mJ of ultraviolet rays were irradiated from the dicing tape side to produce a dicing die bond film A.

Comparative Example 1
(Production of dicing tape)
A dicing tape B was obtained in the same manner as in Example 1 except that an EVA film (trade name “NED # 125”, manufactured by Gunze Co., Ltd., thickness: 125 μm) was used as the substrate.

(Production of dicing die bond film)
A dicing die bond film B was produced in the same manner as in Example 1 except that the dicing tape B was used instead of the dicing tape A.

Comparative Example 2
(Production of dicing tape)
As Example 1, except that a plastic substrate having a three-layer configuration of polyethylene / polypropylene / polyethylene (trade name “DDZ”, manufactured by Gunze Co., Ltd., thickness 90 μm) was used, Dicing tape C was obtained.

(Production of dicing die bond film)
A dicing die bond film C was produced in the same manner as in Example 1 except that the dicing tape C was used instead of the dicing tape A.

Comparative Example 3
(Production of dicing tape)
A dicing tape D was obtained in the same manner as in Example 1, except that an EVA film (trade name “RB0104”, Kurashiki Boseki Co., Ltd., thickness 130 μm) was used as the substrate.

(Production of dicing die bond film)
A dicing die bond film D was produced in the same manner as in Example 1 except that the dicing tape D was used instead of the dicing tape A.

<Evaluation>
The following evaluation was performed about the dicing tape and dicing die-bonding film which were obtained by the Example and the comparative example. The results are shown in Table 1.

(Tensile stress and stress relaxation rate of dicing tape)
From the dicing tapes obtained in Examples and Comparative Examples, a strip-shaped test piece was obtained by cutting into a length of 140 mm and a width of 20 mm with the MD direction of the substrate as the length direction. This strip-shaped test piece was subjected to a tensile tester (trade name “AFX-50NX”, manufactured by Shimadzu Corporation) at an initial chuck distance of 100 mm and a tensile speed of 100 mm / min in an atmosphere of 23 ° C. and 50% RH. The sample was stretched (elongated) to an elongation rate of 30% and stopped, and the stress value was measured for 2000 seconds. And the stress value at the time of extending | stretching and stopping was obtained as "the stress value at the time of 30% extending | stretching", and the stress value when 1000 second passed since extending | stretching stop was obtained as "the stress value after 30% extending | stretching 1000 seconds." The stress value at 30% stretching was A, the stress value after 30 seconds of stretching 1000 seconds was B, and the stress relaxation rate 1000 seconds after stretching 30% under the temperature condition of 23 ° C. was obtained by the following formula. .
Stress relaxation rate (%) = (A−B) / A × 100

(Floating semiconductor chip with die bond film)
Using the product name “ML300-Integration” (manufactured by Tokyo Seimitsu Co., Ltd.) as a laser processing device, align the focal point with the inside of a 12-inch semiconductor wafer, and follow the grid-like (10 mm × 10 mm) division line Then, a laser beam was irradiated to form a modified region inside the semiconductor wafer. Laser light irradiation was performed under the following conditions.
(A) Laser light
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross section 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse
Repetition frequency 100kHz
Pulse width 30ns
Output 20μJ / pulse
Laser light quality TEM00 40
Polarization characteristics Linearly polarized light (B) Condensing lens
50 times magnification
NA 0.55
60% transmittance for laser wavelength
(C) Moving speed of the table on which the semiconductor substrate is placed 100 mm / second

  After the modified region is formed inside the semiconductor wafer, a backgrinding protective tape is attached to the surface of the semiconductor wafer, and the thickness of the semiconductor wafer is adjusted using a back grinder (trade name “DGP8760”, manufactured by DISCO Corporation). The back surface was ground to 30 μm.

  The semiconductor wafer on which the modified region was formed and the dicing ring were bonded to the dicing die bond film obtained in the examples and comparative examples. Then, the semiconductor wafer and the die bond film were cleaved using a die separator (trade name “DDS2300”, manufactured by DISCO Corporation). Specifically, first, the semiconductor wafer was cleaved by performing a cool expansion with a cool expander unit under conditions of a temperature of −15 ° C., a predetermined speed, and a predetermined amount of expand. In addition, the speed (expanding speed) at the time of the cool expansion is 0.5 mm / second in Example 1, and 1 mm / second in Comparative Examples 1 to 3. The amount of expansion is 3 mm in Example 1, Comparative Examples 1 and 2 Is 8 mm, and Comparative Example 3 is 4 mm. In addition, since the preferable conditions (expanding speed, the amount of expanding, etc.) of a cool expand change with kinds of dicing tape, cool expand was performed on the most preferable conditions in an Example and each comparative example. After the cool expansion, it was confirmed that there was no problem in cleaving and floating of the semiconductor chip with the die bond film.

  After cleaving the semiconductor wafer and the die bond film, room temperature expansion was performed using the above cool expander unit as it was at room temperature, an expansion speed of 0.3 mm / second, and an expansion amount of 8 mm. And the area of the part which the die-bonding film floats from the dicing tape (The ratio of the area of the semiconductor chip with the die-bonding film which floats when the area of the whole die-bonding film is made into 100%) was observed with the microscope. A case where there was no float or was within an allowable range was evaluated as ◯, and a case where the float was conspicuous was evaluated as x. The results are shown in Table 1. In addition, since the preferable conditions (expanding speed, the amount of expand, etc.) of normal temperature expansion differ with kinds of dicing tape, normal temperature expansion was performed on the most preferable conditions in the Example and each comparative example, and evaluation was performed.

DESCRIPTION OF SYMBOLS 1 Dicing tape 11 Base material 12 Adhesive layer 2, 21 Die bond film 3 Dicing die bond film W, 30A Semiconductor wafer 30B Semiconductor wafer division body 30a Division groove 30b Modified area 31 Semiconductor chip

Claims (6)

Having a base material and an adhesive layer laminated on the base material,
In at least one direction, the stress relaxation rate after 1000 seconds after stretching 30% at a temperature condition of 23 ° C. is 45% or more,
A dicing tape having a stress value of 4 MPa or less after 1000 seconds after stretching 30% at 23 ° C. in at least one direction.   The dicing tape according to claim 1, wherein the substrate has a thickness of 40 to 150 μm.   The dicing tape according to claim 1 or 2, wherein a stress value when stretched by 30% under a temperature condition of 23 ° C in at least one direction is 5 MPa or more.   The difference between the stress value when stretched by 30% under the temperature condition of 23 ° C. in the at least one direction and the stress value after 1000 seconds after stretching by 30% under the temperature condition of 23 ° C. in the at least one direction is The dicing tape according to any one of claims 1 to 3, wherein the dicing tape is 5 MPa or more. The dicing tape according to any one of claims 1 to 4, and a die bond film laminated on the pressure-sensitive adhesive layer in the dicing tape,
The said die-bonding film is a dicing die-bonding film used by cleaving by applying a tensile stress. A process A for attaching a divided semiconductor wafer including a plurality of semiconductor chips or a semiconductor wafer that can be singulated to a plurality of semiconductor chips on the die bond film side of the dicing die bond film according to claim 5;
Expanding the dicing tape in the dicing die-bonding film under relatively low temperature conditions, and cleaving at least the die-bonding film to obtain a semiconductor chip with a die-bonding film; and
Expanding the dicing tape under a relatively high temperature condition to widen the gap between the semiconductor chips with the die bond film; and
A process D for picking up the semiconductor chip with the die-bonding film.

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