JP2019204862A - Dicing die bond film - Google Patents

Abstract

To provide a dicing die bond film provided with an adhesive layer suitable for realizing good adhesion to a frame member such as a ring frame while securing the cleaving property in an expanding process.SOLUTION: A dicing die bond film X according to the present invention includes a dicing tape 10 and an adhesive layer 20. The dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12. The adhesive layer 20 is in close contact with the adhesive layer 12 so as to be peelable. The adhesive layer 20 has a tensile storage modulus of 5 to 120 MPa at 25°C measured under a predetermined condition for an adhesive layer sample piece having a width of 10 mm and a thickness of 160 μm. In addition, the adhesive layer 20 has a tensile storage modulus of 3000 to 6000 MPa at -15°C measured under a predetermined condition for an adhesive layer sample piece having a width of 5 mm and a thickness of 80 μm.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a dicing die bond film that can be used in the manufacturing process of a semiconductor device.

  In the manufacturing process of a semiconductor device, a dicing die-bonding film may be used to obtain a semiconductor chip with an adhesive film having a die-corresponding chip size, that is, a semiconductor chip with a die-bonding film. The dicing die-bonding film has a size corresponding to the semiconductor wafer to be processed. For example, a dicing tape comprising a base material and an adhesive layer and a die-bonding film (adhesive) that is detachably adhered to the adhesive layer side. Agent layer).

  As one of techniques for obtaining a semiconductor chip with a die bond film using a dicing die bond film, a technique of expanding a dicing tape in the dicing die bond film and cutting the die bond film is known. In this method, first, a semiconductor wafer is bonded onto a die bond film of a dicing die bond film. For example, the semiconductor wafer is processed so as to be cleaved together with a die bond film and to be separated into a plurality of semiconductor chips. Next, an expanding device is used to cleave the die bond film so that a plurality of die bond film pieces each in close contact with the semiconductor chip are generated from the die bond film on the dicing tape, and the dicing tape of the dicing die bond film is expanded. Is done. In this expanding process, the semiconductor wafer on the die bond film is cleaved at a location corresponding to the cleave location on the die bond film, and the semiconductor wafer is divided into a plurality of semiconductor chips on the dicing die bond film or dicing tape. Next, in order to increase the separation distance for the plurality of semiconductor chips with die-bonding films after cutting on the dicing tape, an expanding process is performed again. Next, for example, after a cleaning process, each semiconductor chip is picked up from the bottom of the dicing tape by a pin member of the pickup mechanism together with a die-bonding film of a chip-corresponding size and picked up from the dicing tape. The In this way, a semiconductor chip with a die bond film is obtained. This semiconductor chip with a die bond film is fixed to an adherend such as a mounting substrate by die bonding via the die bond film. For example, about the technique regarding the dicing die-bonding film used as mentioned above, it describes in the following patent documents 1-3, for example.

JP 2007-2173 A JP 2010-177401 A JP 2012-23161 A

  FIG. 15 is a schematic cross-sectional view of a conventional dicing die bond film Y. The dicing die bond film Y includes a dicing tape 60 and a die bond film 70. The dicing tape 60 has a laminated structure of a base material 61 and an adhesive layer 62 that exhibits adhesive force. The die bond film 70 is in close contact with the adhesive layer 62 due to the adhesive force of the adhesive layer 62. Such a dicing die-bonding film Y has a disk shape having a size corresponding to a semiconductor wafer to be processed or a workpiece in the manufacturing process of the semiconductor device, and can be used in the above-described expanding process. For example, as illustrated in FIG. 16, the above-described expanding process is performed in a state where the semiconductor wafer 81 is bonded to the die bond film 70 and the ring frame 82 is bonded to the adhesive layer 62. For example, the semiconductor wafer 81 is processed so as to be separated into a plurality of semiconductor chips.

  The ring frame 82 is a frame member that mechanically abuts when a workpiece is conveyed by a conveyance mechanism such as a conveyance arm provided in the expanding device when the ring frame 82 is attached to the dicing die bond film Y. The conventional dicing die bond film Y is designed such that such a ring frame 82 can be fixed to the film by the adhesive force of the adhesive layer 62 of the dicing tape 60. That is, the conventional dicing die bond film Y has a design in which a ring frame attaching region is secured around the die bond film 70 in the adhesive layer 62 of the dicing tape 60. In such a design, the distance in the film in-plane direction between the outer peripheral end 62e of the pressure-sensitive adhesive layer 62 and the outer peripheral end 70e of the die bond film 70 is about 10 to 30 mm.

  The present invention has been conceived under the circumstances as described above, and the object thereof is to realize good adhesion to a frame member such as a ring frame while ensuring the cleaving property in the expanding process. It is providing the dicing die-bonding film provided with the adhesive layer as a die-bonding film suitable for this.

  The dicing die bond film provided by the present invention includes a dicing tape and an adhesive layer as a die bond film. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive layer is in close contact with the pressure-sensitive adhesive layer in the dicing tape so as to be peelable. The adhesive layer has an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10 ° C./min for an adhesive layer sample piece having a width of 10 mm and a thickness of 160 μm. The tensile storage elastic modulus (first tensile storage elastic modulus) at 25 ° C. measured under conditions is 5 to 120 MPa. At the same time, the adhesive layer had an initial chuck-to-chuck distance of 10 mm, a frequency of 900 Hz, a dynamic strain of 0.005%, and a heating rate of 5 ° C./min. The tensile storage elastic modulus (second tensile storage elastic modulus) at −15 ° C. measured under the conditions is 3000 to 6000 MPa. The dicing die-bonding film having such a configuration can be used to obtain a semiconductor chip with a die-bonding film in the manufacturing process of the semiconductor device.

  In the manufacturing process of a semiconductor device, as described above, in order to obtain a semiconductor chip with a die bond film, an expanding process performed using a dicing die bond film, that is, an expanding process for cleaving may be performed. . In this expanding process, it is necessary that the die bond film can be cleaved by the expansion of the dicing tape while the work such as the semiconductor wafer and the frame member such as the ring frame are both held by the dicing die bond film.

  As described above, the adhesive layer as a die bond film of the dicing die bond film has the first tensile storage elastic modulus at 25 ° C. of 5 to 120 MPa. Such a configuration is suitable for securing a sticking force at normal temperature to a frame member such as a ring frame in the dicing die bond film or the adhesive layer thereof. Specifically, this configuration is suitable for appropriately attaching the frame member to a dicing die bond film or its adhesive layer at room temperature. In addition, this configuration is suitable for realizing a good adhesive force in the adhesive layer at room temperature before and after the expanding step. The dicing die bond film is required to have no adhesive residue on the frame member when it is peeled off from the frame member attached to the dicing die bond film (prevention of residue at the time of peeling). From the viewpoint of preventing residues at the time of peeling at room temperature, the first tensile storage elastic modulus at 25 ° C. is preferably 6 MPa or more, more preferably 7 MPa or more. From the viewpoint of realizing a high adhesive force at normal temperature to the frame member in the adhesive layer, the first tensile storage modulus at 25 ° C. is preferably 110 MPa or less, more preferably 100 MPa or less.

  At the same time, the adhesive layer of the dicing die-bonding film has a second tensile storage modulus at −15 ° C. of 3000 to 6000 MPa as described above. Such a configuration is suitable for cleaving the adhesive layer in the expanding step performed at -15 ° C. and in the vicinity of the low temperature, and the adhesive force at a low temperature to the frame member in the adhesive layer. It is suitable for ensuring the above. From the viewpoint of realizing good cleaving property at low temperature in the adhesive layer, the second tensile storage elastic modulus at −15 ° C. is preferably 3200 MPa or more, more preferably 3500 MPa or more. From the viewpoint of realizing a high adhesive force at a low temperature in the adhesive layer, the second tensile storage elastic modulus at −15 ° C. is preferably 5800 MPa or less, more preferably 5500 MPa or less. As the adhesion force to the frame member at the temperature at which the expanding process is performed is higher, the peeling of the adhesive layer or the dicing die bond film from the frame member in the expanding process tends to be suppressed.

  As described above, the dicing die-bonding film is suitable for realizing good adhesion to a frame member such as a ring frame while securing the cleaving property in the expanding process in the adhesive layer.

  Such a dicing die-bonding film includes a dicing tape or an adhesive layer thereof and an adhesive layer thereon so that the adhesive layer includes a frame application area in addition to a work application area. It is possible to design with substantially the same dimensions in the in-plane direction of the film. For example, in the in-plane direction of the dicing die-bonding film, it is possible to adopt a design in which the outer peripheral edge of the adhesive layer is within a distance of 1000 μm from the outer peripheral edge of the base material of the dicing tape or the adhesive layer . Such a dicing die bond film includes a process for forming one dicing tape having a laminated structure of a base material and an adhesive layer, and a process for forming one adhesive layer or a die bond film. Is suitable for carrying out in a single process such as punching.

  In the manufacturing process of the above-described conventional dicing die bond film Y, a processing step (first processing step) for forming a dicing tape 60 having a predetermined size and shape, and a die bond film 70 having a predetermined size and shape are provided. A processing step (second processing step) for forming is necessary as a separate step. In the first processing step, for example, a predetermined separator, a base material layer to be formed on the base material 61, and an adhesive to be formed on the pressure-sensitive adhesive layer 62 positioned therebetween. The laminated sheet body having a laminated structure with the agent layer is subjected to processing in which a processing blade is inserted from the base material layer side to the separator. Thereby, the dicing tape 60 which has the laminated structure of the adhesive layer 62 and the base material 61 on a separator is formed on a separator. In the second processing step, for example, with respect to a laminated sheet body having a laminated structure of a predetermined separator and a die bond film to be formed on the die bond film 70, a processing blade extends from the die bond film side to the separator. Processing to rush is performed. Thereby, the die bond film 70 is formed on the separator. The dicing tape 60 and the die bond film 70 thus formed in separate steps are then bonded together while being aligned. FIG. 17 shows a conventional dicing die bond film Y with a separator 83 covering the surface of the die bond film 70 and the surface of the pressure-sensitive adhesive layer 62.

  On the other hand, the dicing die bond film of the present invention in the case where the dicing tape or the pressure-sensitive adhesive layer thereof and the adhesive layer thereon have substantially the same design dimensions in the in-plane direction of the film, The process for forming one dicing tape having a laminated structure with the adhesive layer and the process for forming one adhesive layer are collectively performed by a process such as one punching process. It is suitable for. Such a dicing die-bonding film is suitable for realizing good adhesion to the frame member while ensuring the cleaving property in the expanding process in the adhesive layer, and also reduces the number of manufacturing processes and the manufacturing cost. Suitable for efficient production in terms of points.

Shear adhesive strength at -15 ° C. for SUS plane in the adhesive layer of the present dicing die-bonding film is preferably 66N / cm ² or more, more preferably 68N / cm ² or more, more preferably 70N / cm ² or more is there. The shear adhesive strength is a value measured by a shear adhesive strength measuring method described later with respect to the examples. The said structure regarding a shear adhesive force is suitable when ensuring holding | maintenance of the frame member by this dicing die-bonding film at -15 degreeC and the low temperature of the vicinity.

  The adhesive layer of the present dicing die bond film preferably contains a polymer component having a weight average molecular weight of 800,000 to 2,000,000 and a glass transition temperature of -10 to 3 ° C. Such a configuration is intended to balance the cleaving property at a low temperature in the adhesive layer, the adhesive force of the adhesive layer to the frame member, and the prevention of the residue when the adhesive layer is peeled off. Is preferred. From the viewpoint of securing the cleaving property at a low temperature in the adhesive layer and from the viewpoint of preventing the residue at the time of peeling, the weight average molecular weight of the polymer is more preferably 900000 or more, and more preferably 1000000 or more. From the viewpoint of securing the adhesive force of the adhesive layer to the frame member, the weight average molecular weight of the polymer is more preferably 1800000 or less, and more preferably 1500,000 or less. From the viewpoint of securing the cleaving property at a low temperature in the adhesive layer, the glass transition temperature of the polymer is more preferably −8 ° C. or higher, and more preferably −6.5 ° C. or higher. From the viewpoint of securing the adhesive strength to the frame member at a low temperature in the adhesive layer, the glass transition temperature of the polymer is more preferably 0 ° C. or lower, and more preferably −1.5 ° C. or lower.

  The polymer component in the adhesive layer preferably includes a structural unit derived from acrylonitrile. Such a structure is based on the fact that the nitrile group in the unit of the polymer component in the adhesive layer is highly polar. In the adhesive layer, high adhesion to a metal frame member such as a SUS ring frame. Is preferable for realizing the above.

  The adhesive layer of the present dicing die bond film preferably contains a silica filler in a proportion of 10 to 40% by mass. The configuration that the silica filler content in the adhesive layer is 10% by mass or more is preferable in order to ensure the cleaving property in the expanding process in the adhesive layer, and also aggregates in the adhesive layer. It is preferable for securing the force and preventing the above-mentioned residue at the time of peeling. In securing the adhesive force at a low temperature to the frame member in the adhesive layer, the silica filler content of the adhesive layer is preferably 40% by mass or less, more preferably 30% by mass or less, more preferably 25% by mass or less.

  The pressure-sensitive adhesive layer of the dicing tape of the present dicing die-bonding film is preferably a radiation curable pressure-sensitive adhesive layer. When the dicing tape pressure-sensitive adhesive layer is a radiation-curing pressure-sensitive adhesive layer, the present dicing die-bonding film is in contact with the pressure-sensitive adhesive layer before radiation curing in a T-type peeling test under the conditions of 23 ° C. and a peeling speed of 300 mm / min. The peeling force between the adhesive layer is preferably 0.5 N / 20 mm or more. Such a configuration relating to the peel adhesive strength is preferable for securing the adhesion force to the frame member in the adhesive layer.

  The thickness of the adhesive layer in this dicing die-bonding film is preferably 7 to 30 μm. The configuration that the thickness of the adhesive layer is 7 μm or more, the adhesive layer on which the frame member is adhered follows the fine irregularities on the surface of the frame member and exhibits good frame member adhesion. This is preferable. The configuration that the thickness of the adhesive layer is 30 μm or less is preferable in securing the cleaving property in the expanding step in the adhesive layer.

It is a cross-sectional schematic diagram of the dicing die-bonding film which concerns on one Embodiment of this invention. An example in case the dicing die-bonding film shown in FIG. 1 accompanies a separator is represented. Part of the steps in an example of the manufacturing method of the dicing die bond film shown in FIG. The process following the process shown in FIG. 3 is represented. 1 represents some steps in a semiconductor device manufacturing method in which the dicing die-bonding film shown in FIG. 1 is used. The process following the process shown in FIG. 5 is represented. The process following the process shown in FIG. 6 is represented. The process following the process shown in FIG. 7 is represented. The process following the process shown in FIG. 8 is represented. The process following the process shown in FIG. 9 is represented. FIG. 4 shows some steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in FIG. 1 is used. FIG. 4 shows some steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in FIG. 1 is used. FIG. 4 shows some steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in FIG. 1 is used. FIG. 4 shows some steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in FIG. 1 is used. It is a cross-sectional schematic diagram of the conventional dicing die-bonding film. The usage aspect of the dicing die-bonding film shown in FIG. 15 is represented. The one supply form of the dicing die-bonding film shown in FIG. 15 is represented.

  FIG. 1 is a schematic cross-sectional view of a dicing die bond film X according to one embodiment of the present invention. The dicing die bond film X has a laminated structure including the dicing tape 10 and the adhesive layer 20. The dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12. The pressure-sensitive adhesive layer 12 has a pressure-sensitive adhesive surface 12a on the adhesive layer 20 side. The adhesive layer 20 includes a workpiece attachment region and a frame attachment region, and is in close contact with the adhesive layer 12 of the dicing tape 10 or its adhesive surface 12a so as to be peelable. The dicing die-bonding film X can be used in an expanding process as described later in the process of obtaining a semiconductor chip with a die-bonding film in the manufacture of a semiconductor device. The dicing die-bonding film X has a disk shape having a size corresponding to the semiconductor wafer to be processed in the manufacturing process of the semiconductor device, and the diameter thereof is, for example, in the range of 345 to 380 mm (12-inch wafer compatible type), It is in the range of 245 to 280 mm (8 inch wafer compatible type), in the range of 195 to 230 mm (6 inch wafer compatible type), or in the range of 495 to 530 mm (18 inch wafer compatible type).

  The substrate 11 of the dicing tape 10 is an element that functions as a support in the dicing tape 10 or the dicing die bond film X. The substrate 11 is, for example, a plastic substrate, and a plastic film can be suitably used as the plastic substrate. Examples of the constituent material of the plastic substrate include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyether imide, polyamide, wholly aromatic polyamide, polyphenyl sulfide, Examples include aramid, fluororesin, cellulosic resin, and silicone resin. Examples of polyolefins include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, polymethylpentene, and ethylene. -Vinyl acetate copolymer (EVA), ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer Is mentioned. Examples of the polyester include polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The base material 11 may be made of one type of material, or may be made of two or more types of materials. The base material 11 may have a single layer structure or a multilayer structure. Moreover, when the base material 11 consists of a plastic film, an unstretched film may be sufficient, a uniaxially stretched film may be sufficient, and a biaxially stretched film may be sufficient. When the pressure-sensitive adhesive layer 12 on the substrate 11 has ultraviolet curable properties as described later, the substrate 11 preferably has ultraviolet transparency.

  In the process of using the dicing die-bonding film X, when the dicing tape 10 or the base material 11 is contracted, for example, by partial heating, the base material 11 preferably has heat shrinkability. From the viewpoint of ensuring good heat shrinkability in the base material 11, the base material 11 preferably contains an ethylene-vinyl acetate copolymer as a main component. The main component of the base material 11 is a component that occupies the largest mass ratio among the constituent components of the base material. Moreover, when the base material 11 consists of a plastic film, in order to implement | achieve isotropic heat shrinkability about the dicing tape 10 thru | or the base material 11, it is preferable that the base material 11 is a biaxially stretched film. The dicing tape 10 to the base material 11 have a heat shrinkage rate of, for example, 2 to 30% in a heat treatment test performed at a heating temperature of 100 ° C. and a heat treatment time of 60 seconds.

  The surface on the pressure-sensitive adhesive layer 12 side of the base material 11 may be subjected to physical treatment, chemical treatment, or undercoating treatment for enhancing the adhesion with the pressure-sensitive adhesive layer 12. Examples of the physical treatment include corona treatment, plasma treatment, sand mat processing treatment, ozone exposure treatment, flame exposure treatment, high piezoelectric impact exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment. It is preferable that the said process for improving adhesiveness is given to the whole surface at the side of the adhesive layer 12 in the base material 11. FIG.

  The thickness of the base material 11 is preferably 40 μm or more, more preferably 50 μm or more, and more preferably from the viewpoint of ensuring strength for the base material 11 to function as a support in the dicing tape 10 or the dicing die bond film X. Is 55 μm or more, more preferably 60 μm or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape 10 or the dicing die bond film X, the thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less, and more preferably 150 μm or less. .

  The pressure-sensitive adhesive layer 12 of the dicing tape 10 contains a pressure-sensitive adhesive. The pressure-sensitive adhesive may be a pressure-sensitive adhesive (adhesive strength reducing type pressure-sensitive adhesive) capable of intentionally reducing the pressure-sensitive adhesive force by an external action such as irradiation or heating, or may be pressure-sensitive depending on the action from the outside. It may be a pressure-sensitive adhesive (pressure-sensitive adhesive non-reducing type pressure-sensitive adhesive) whose force is hardly or not reduced at all. Whether to use a pressure-reducing adhesive or a non-reducing adhesive as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is as follows. It can select suitably according to the usage condition of the dicing die-bonding film X, such as the method and conditions of crystallization.

  When using a pressure-reducing adhesive as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, in the process of using the dicing die-bonding film X, the pressure-sensitive adhesive layer 12 exhibits a relatively high pressure and a relatively low pressure-sensitive adhesive force. The state shown can be used properly. For example, when the dicing die-bonding film X is used in an expanding process described later, the adhesive layer 12 has a high adhesive strength state in order to suppress / prevent floating and peeling of the adhesive layer 20 from the adhesive layer 12. On the other hand, after that, in the pickup process described later for picking up the semiconductor chip with the adhesive layer from the dicing tape 10 of the dicing die bond film X, the semiconductor chip with the adhesive layer from the adhesive layer 12 is used. It is possible to utilize the low adhesive force state of the pressure-sensitive adhesive layer 12 in order to make it easier to pick up the ink.

  Examples of such pressure-reducing adhesives include radiation-curing adhesives (radiation-curable adhesives) and heat-foaming adhesives. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of pressure-sensitive adhesive type adhesive may be used, or two or more types of pressure-sensitive adhesive type pressure-sensitive adhesives may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed from a pressure-reducing adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed from a pressure-reducing adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the whole pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing adhesive, or a predetermined part of the pressure-sensitive adhesive layer 12 is a pressure-reducing adhesive. The other part may be formed from an adhesive strength non-reducing adhesive. Further, when the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers constituting the laminated structure may be formed of a pressure-reducing adhesive, or some of the layers in the laminated structure are reduced in pressure-sensitive adhesive. May be formed.

  As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, a pressure-sensitive adhesive that is cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X rays can be used. A curable pressure sensitive adhesive (ultraviolet curable pressure sensitive adhesive) can be used particularly preferably.

  Examples of the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 include a base polymer such as an acrylic polymer that is an acrylic pressure-sensitive adhesive and a radiation-polymerizable monomer having a functional group such as a radiation-polymerizable carbon-carbon double bond. An additive type radiation curable pressure-sensitive adhesive containing components and oligomer components can be mentioned.

  The acrylic polymer preferably contains a monomer unit derived from an acrylic ester and / or a methacrylic ester as a monomer unit having the largest mass ratio. Hereinafter, “(meth) acryl” represents “acryl” and / or “methacryl”, and “(meth) acrylate” represents “acrylate” and / or “methacrylate”.

  Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer include, for example, hydrocarbon groups such as (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester. Examples thereof include (meth) acrylic acid esters. Examples of the (meth) acrylic acid alkyl ester include (meth) acrylic acid methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, Examples include octadecyl ester and eicosyl ester. Examples of (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include phenyl (meth) acrylate and benzyl (meth) acrylate. As a monomer component for forming a monomer unit of an acrylic polymer, one type of (meth) acrylic acid ester may be used, or two or more types of (meth) acrylic acid ester may be used. The (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer is preferably a (meth) acrylic acid alkyl ester having an alkyl group having 10 or more carbon atoms, more preferably dodecyl acrylate. Further, in order to appropriately express the basic properties such as adhesiveness due to (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of (meth) acrylic acid ester in all monomer components for forming the acrylic polymer Is preferably 40% by mass or more, more preferably 60% by mass or more.

  The acrylic polymer may contain a monomer unit derived from another monomer copolymerizable with (meth) acrylic acid ester in order to modify its cohesive strength, heat resistance, and the like. Examples of such other monomers include functional groups such as carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, and acrylonitrile. And group-containing monomers. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, 2-carboxyethyl (meth) acrylate, 5-carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. . Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, ( Examples include 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxydodecyl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, and sulfopropyl (meth) acrylate. . Examples of the phosphate group-containing monomer include 2-hydroxyethylacryloyl phosphate. As the other copolymerizable monomer for the acrylic polymer, one type of monomer may be used, or two or more types of monomers may be used.

  The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth) acrylic acid ester in order to form a crosslinked structure in the polymer skeleton. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, polyglycidyl (meth) acrylate, polyester (meth) acrylate, and urethane ( And (meth) acrylate. As a monomer component for the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. The ratio of the polyfunctional monomer in the total monomer components for forming the acrylic polymer is preferably such that the adhesive layer 12 appropriately develops basic properties such as adhesiveness due to the (meth) acrylic acid ester. It is 40 mass% or less, preferably 30 mass% or less.

  The acrylic polymer can be obtained by polymerizing raw material monomers for forming the acrylic polymer. Examples of the polymerization technique include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the semiconductor device manufacturing method in which the dicing tape 10 or the dicing die bond film X is used, it is preferable that the low molecular weight substance in the adhesive layer 12 in the dicing tape 10 or the dicing die bond film X is small. The weight average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200000 to 3000000.

  The pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may contain, for example, an external crosslinking agent in order to increase the weight average molecular weight of a base polymer such as an acrylic polymer. Examples of the external crosslinking agent for reacting with a base polymer such as an acrylic polymer to form a crosslinked structure include a polyisocyanate compound, an epoxy compound, a polyol compound (such as a polyphenol compound), an aziridine compound, and a melamine crosslinking agent. . The content of the external crosslinking agent in the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer is preferably 6 parts by mass or less, more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the base polymer.

  Examples of the radiation-polymerizable monomer component for forming the radiation-curable pressure-sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol tetra (meth). Acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation-polymerizable oligomer component for forming a radiation-curable pressure-sensitive adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, having a molecular weight of about 100 to 30000. Things are appropriate. The total content of the radiation-polymerizable monomer component and oligomer component in the radiation-curable pressure-sensitive adhesive is determined within a range in which the adhesive strength of the pressure-sensitive adhesive layer 12 to be formed can be appropriately reduced by irradiation, such as an acrylic polymer. The amount is, for example, 5 to 500 parts by weight, preferably 40 to 150 parts by weight, based on 100 parts by weight of the base polymer. Further, as the additive type radiation curable pressure sensitive adhesive, for example, those disclosed in JP-A-60-196956 may be used.

  The radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 includes, for example, a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the polymer side chain or at the polymer main chain terminal in the polymer main chain. Intrinsic radiation curable pressure sensitive adhesives are also included. Such an internal radiation-curable pressure-sensitive adhesive is suitable for suppressing an unintended change in the pressure-sensitive adhesive property due to movement of a low molecular weight component in the pressure-sensitive adhesive layer 12 to be formed.

  As the base polymer contained in the internal radiation-curable pressure-sensitive adhesive, those having an acrylic polymer as a basic skeleton are preferable. As the acrylic polymer having such a basic skeleton, those described above as the acrylic polymer in the addition type radiation curable pressure-sensitive adhesive can be employed. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer including a monomer having a predetermined functional group (first functional group) is copolymerized to form an acrylic polymer. After obtaining, a compound having a predetermined functional group (second functional group) that can react and bond with the first functional group and a radiation-polymerizable carbon-carbon double bond is converted into carbon-carbon. Examples thereof include a method in which a condensation reaction or an addition reaction is performed on an acrylic polymer while maintaining the radiation polymerization property of a double bond.

  Examples of the combination of the first functional group and the second functional group include, for example, carboxy group and epoxy group, epoxy group and carboxy group, carboxy group and aziridyl group, aziridyl group and carboxy group, hydroxy group and isocyanate group, and isocyanate group. And a hydroxy group. Of these combinations, a combination of a hydroxy group and an isocyanate group or a combination of an isocyanate group and a hydroxy group is preferable from the viewpoint of easy reaction tracking. In addition, since it is technically difficult to produce a polymer having a highly reactive isocyanate group, the first functional group on the acrylic polymer side is easy in terms of production or availability of the acrylic polymer. The case where the group is a hydroxy group and the second functional group is an isocyanate group is more preferable. In this case, as an isocyanate compound having both a radiation-polymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, as a radiation-polymerizable unsaturated functional group-containing isocyanate compound, for example, methacryloyl isocyanate, 2 -Methacryloyloxyethyl isocyanate (MOI) and m-isopropenyl-α, α-dimethylbenzyl isocyanate.

  The radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator. Examples of photopolymerization initiators include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphors. Examples include quinones, halogenated ketones, acyl phosphinoxides, and acyl phosphonates. Examples of α-ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, 2-methyl-2-hydroxypro Piophenone and 1-hydroxycyclohexyl phenyl ketone are mentioned. Examples of acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio)- Phenyl] -2-morpholinopropane-1. Examples of the benzoin ether compounds include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal compound include benzyl dimethyl ketal. Examples of the aromatic sulfonyl chloride compound include 2-naphthalenesulfonyl chloride. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone-based compound include benzophenone, benzoylbenzoic acid, and 3,3′-dimethyl-4-methoxybenzophenone. Examples of thioxanthone compounds include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl. Thioxanthone is mentioned. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer such as an acrylic polymer.

  The heat-foaming pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive containing a component that foams or expands when heated. Examples of the component that foams or expands by heating include foaming agents and thermally expandable microspheres.

  Examples of the foaming agent for the heat-foaming pressure-sensitive adhesive include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium borohydride, and azides. Examples of the organic foaming agent include chloroalkanes such as trichloromonofluoromethane and dichloromonofluoromethane, azo compounds such as azobisisobutyronitrile, azodicarbonamide, barium azodicarboxylate, and paratoluenesulfonyl. Hydrazine compounds such as hydrazide, diphenylsulfone-3,3′-disulfonylhydrazide, 4,4′-oxybis (benzenesulfonylhydrazide), allylbis (sulfonylhydrazide), ρ-toluylenesulfonyl semicarbazide and 4,4′-oxybis Semicarbazide compounds such as (benzenesulfonyl semicarbazide), triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole, and N, N′-dinitrosopentamethylenetetramine and N, N′-dimethyl -N, N'-Dinitrosote N- nitroso compounds such as phthalamide may be mentioned.

  Examples of the heat-expandable microspheres for the heat-foamable pressure-sensitive adhesive include microspheres having a structure in which a substance that is easily gasified and expanded by heating is enclosed in a shell. Examples of the substance that easily gasifies and expands by heating include isobutane, propane, and pentane. Thermally expandable microspheres can be produced by encapsulating a substance that easily expands by gasification by heating into a shell-forming substance by a coacervation method or an interfacial polymerization method. As the shell forming substance, a substance exhibiting heat melting property or a substance that can be ruptured by the action of thermal expansion of the encapsulated substance can be used. Such materials include, for example, vinylidene chloride-acrylonitrile copolymers, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.

  As said adhesive force non-reduction type adhesive in the adhesive layer 12, a pressure sensitive adhesive is mentioned, for example. As this pressure-sensitive adhesive, for example, an acrylic adhesive or a rubber adhesive having an acrylic polymer as a base polymer can be used. When the pressure-sensitive adhesive layer 12 contains an acrylic pressure-sensitive adhesive as a pressure-sensitive pressure-sensitive adhesive, the acrylic polymer that is the base polymer of the acrylic pressure-sensitive adhesive is preferably a mass proportion of monomer units derived from (meth) acrylic acid esters. As the most monomer unit. Examples of such an acrylic polymer include the acrylic polymers described above with respect to the radiation curable pressure-sensitive adhesive.

  As the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, a pressure-sensitive adhesive in which the radiation-curable pressure-sensitive adhesive described above with respect to the pressure-sensitive adhesive is cured by radiation irradiation may be used. Such cured radiation-curing type pressure-sensitive adhesive can exhibit adhesiveness due to the polymer component depending on the content of the polymer component even if the adhesive strength is reduced by radiation irradiation, In the aspect, it is possible to exert an adhesive force that can be used to hold the adherend in an adhesive state.

  In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of non-reducing adhesive may be used, or two or more types of non-reducing adhesive may be used. Moreover, the whole adhesive layer 12 may be formed from a non-adhesive pressure-reducing adhesive, or a part of the adhesive layer 12 may be formed from a non-reducing adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a non-reducing adhesive pressure-sensitive adhesive, or a predetermined part of the adhesive layer 12 is a non-reducing adhesive force type. It may be formed from an adhesive and the other part may be formed from an adhesive strength-reducing adhesive. Further, when the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers constituting the laminated structure may be formed from a non-adhesive pressure-reducing adhesive, or some of the layers in the laminated structure are non-adhesive strength type. You may form from an adhesive.

  In addition to the above-mentioned components, the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may contain a crosslinking accelerator, a tackifier, an anti-aging agent, a colorant, and the like. Examples of the colorant include pigments and dyes. The colorant may be a compound that is colored by irradiation with radiation. Examples of such a compound include leuco dyes.

  The thickness of the pressure-sensitive adhesive layer 12 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and more preferably 5 to 25 μm. Such a configuration is suitable, for example, when balancing the adhesive force to the adhesive layer 20 before and after radiation curing of the pressure-sensitive adhesive layer 12 when the pressure-sensitive adhesive layer 12 includes a radiation-curable pressure-sensitive adhesive. It is.

  The adhesive layer 20 of the dicing die-bonding film X has a function as an adhesive showing thermosetting for die bonding, and an adhesive function for holding a workpiece such as a semiconductor wafer and a frame member such as a ring frame described later. Have both. In the present embodiment, the adhesive for forming the adhesive layer 20 may have a composition including a thermosetting resin and, for example, a thermoplastic resin as a binder component, or may react with the curing agent. It may have a composition including a thermoplastic resin with a thermosetting functional group capable of forming a bond. When the adhesive for forming the adhesive layer 20 has a composition including a thermoplastic resin with a thermosetting functional group, the adhesive further includes a thermosetting resin (such as an epoxy resin). It is not necessary to include. Such an adhesive layer 20 may have a single layer structure or a multilayer structure.

  When the adhesive layer 20 includes a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, And thermosetting polyimide resin. As the thermosetting resin in the adhesive layer 20, one type of resin may be used, or two or more types of resins may be used. An epoxy resin is preferable as the thermosetting resin contained in the adhesive layer 20 because the content of ionic impurities or the like that can cause corrosion of the semiconductor chip to be die-bonded tends to be low. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, and orthocresol. Examples thereof include novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type, and glycidylamine type epoxy resins. Novolac-type epoxy resins, biphenyl-type epoxy resins, trishydroxyphenylmethane-type epoxy resins, and tetraphenylolethane-type epoxy resins are highly reactive with phenolic resins as curing agents and have excellent heat resistance. It is preferable as an epoxy resin contained in the adhesive layer 20.

  Examples of the phenol resin that can act as a curing agent for the epoxy resin include novolac-type phenol resins, resol-type phenol resins, and polyoxystyrenes such as polyparaoxystyrene. Examples of the novolak type phenol resin include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin. As the phenol resin that can act as a curing agent for the epoxy resin, one type of phenol resin may be used, or two or more types of phenol resins may be used. Phenol novolac resin and phenol aralkyl resin are included in the adhesive layer 20 because they tend to improve the connection reliability of the adhesive when used as a curing agent for an epoxy resin as an adhesive for die bonding. It is preferable as a curing agent for epoxy resin.

  From the viewpoint of sufficiently proceeding the curing reaction between the epoxy resin and the phenol resin in the adhesive layer 20, the phenol resin is preferably a hydroxyl group in the phenol resin per equivalent of epoxy group in the epoxy resin component. It is contained in the adhesive layer 20 in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

  The content of the thermosetting resin in the adhesive layer 20 is preferably 5 to 60% by mass, more preferably from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the adhesive layer 20. Is 10-50 mass%.

  Examples of the thermoplastic resin contained in the adhesive layer 20 include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, and ethylene-acrylic acid ester copolymer. Polymers, polybutadiene resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins Is mentioned. As the thermoplastic resin in the adhesive layer 20, one type of resin may be used, or two or more types of resins may be used. As the thermoplastic resin contained in the adhesive layer 20, an acrylic resin is preferable because it has few ionic impurities and has high heat resistance, so that it is easy to ensure the bonding reliability of the adhesive layer 20.

  The adhesive layer 20 preferably contains a polymer component having a weight average molecular weight of 800,000 to 2,000,000 and a glass transition temperature of −10 to 3 ° C. as a main component of the thermoplastic resin. The main component of the thermoplastic resin is a resin component occupying the largest mass ratio among the thermoplastic resin components. Such a configuration balances the cleaving property at a low temperature in the adhesive layer 20, the sticking force of the adhesive layer 20 to the frame member, and the prevention of the residue when the adhesive layer 20 is peeled off. It is suitable for planning. From the viewpoint of securing the cleaving property at a low temperature in the adhesive layer 20 and the viewpoint of preventing the residue at the time of peeling, the weight average molecular weight of the polymer is more preferably 900000 or more, and more preferably 1000000 or more. From the viewpoint of securing the adhesive force of the adhesive layer 20 to the frame member, the weight average molecular weight of the polymer is more preferably 1800000 or less, and more preferably 1500,000 or less. From the viewpoint of securing the cleaving property at a low temperature in the adhesive layer 20, the glass transition temperature of the polymer is more preferably −8 ° C. or higher, more preferably −6.5 ° C. or higher. From the viewpoint of securing the adhesive strength to the frame member at a low temperature in the adhesive layer 20, the glass transition temperature of the polymer is more preferably 0 ° C. or less, more preferably −1.5 ° C. or less.

  As the glass transition temperature of the polymer, the glass transition temperature (theoretical value) obtained based on the following Fox formula can be used. The formula of Fox is a relational expression between the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of the homopolymer for each constituent monomer in the polymer. In the following Fox formula, Tg represents the glass transition temperature (° C.) of the polymer, Wi represents the weight fraction of monomer i constituting the polymer, and Tgi represents the glass transition temperature (° C. of the homopolymer of monomer i. ). Literature values can be used for the glass transition temperature of the homopolymer. For example, “New Polymer Bunko 7 Introduction to Synthetic Resins for Paints” (Kyozo Kitaoka, Polymer Publishing Society, 1995) and “Acrylic Ester Catalog (1997 Edition)” (Mitsubishi Rayon Co., Ltd.) The glass transition temperature of the coalescence is mentioned. On the other hand, the glass transition temperature of the monomer homopolymer can also be determined by a technique specifically described in JP-A-2007-51271.

Fox equation 1 / (273 + Tg) = Σ [Wi / (273 + Tgi)]

  The acrylic resin contained in the adhesive layer 20 as a thermoplastic resin preferably contains monomer units derived from (meth) acrylic acid esters as the main monomer units having the largest mass ratio. As such a (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above regarding the acrylic polymer that is one component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may be used. it can. The acrylic resin contained in the adhesive layer 20 as a thermoplastic resin may contain a monomer unit derived from another monomer copolymerizable with (meth) acrylic acid ester. Examples of such other monomer components include carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, acrylonitrile and other functional groups. Examples include group-containing monomers and various polyfunctional monomers. Specifically, it is possible to copolymerize (meth) acrylic acid ester with respect to an acrylic polymer that is one component of a radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12. As other monomers, the same monomers as described above can be used. From the viewpoint of realizing a high cohesive force in the adhesive layer 20, the acrylic resin contained in the adhesive layer 20 is preferably a (meth) acrylic acid ester, a carboxy group-containing monomer, and nitrogen. It is a copolymer of an atom-containing monomer and a polyfunctional monomer. The (meth) acrylic acid ester is preferably a (meth) acrylic acid alkyl ester having an alkyl group with 4 or less carbon atoms. The polyfunctional monomer is preferably a polyglycidyl polyfunctional monomer. The acrylic resin contained in the adhesive layer 20 is more preferably a copolymer of ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile, and polyglycidyl (meth) acrylate.

  In the configuration in which the polymer component such as an acrylic polymer in the adhesive layer 20 includes a structural unit derived from acrylonitrile, the nitrile group in the structural unit derived from acrylonitrile of the polymer component in the adhesive layer 20 is highly polar. Therefore, the adhesive layer 20 is preferable in realizing high adhesion to a metal frame member such as a SUS ring frame.

  When the adhesive layer 20 includes a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming the thermosetting functional group-containing acrylic resin preferably contains a monomer unit derived from (meth) acrylic acid ester as the main monomer unit having the largest mass ratio. As such a (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above regarding the acrylic polymer that is one component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may be used. it can. On the other hand, examples of the thermosetting functional group for forming the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Of these, a glycidyl group and a carboxy group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxy group-containing acrylic resin can be suitably used. Moreover, as a hardening | curing agent of a thermosetting functional group containing acrylic resin, using what was mentioned above as an external crosslinking agent which may be made into one component of the radiation-curable adhesive for forming the adhesive layer 12, for example is used. it can. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenol compound can be suitably used as the curing agent, and for example, the various phenol resins described above can be used.

  In order to achieve a certain degree of cross-linking with respect to the adhesive layer 20 before being cured for die bonding, for example, functional groups at the molecular chain terminals of the above-mentioned resin included in the adhesive layer 20 are used. It is preferable to blend a polyfunctional compound capable of reacting and the like with a resin composition for forming an adhesive layer as a crosslinking agent. Such a configuration is suitable for improving the adhesive properties at high temperatures and for improving the heat resistance of the adhesive layer 20. An example of such a crosslinking agent is a polyisocyanate compound. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyhydric alcohol and diisocyanate. The content of the crosslinking agent in the adhesive composition for forming an adhesive layer is such that the adhesive layer 20 is formed with respect to 100 parts by mass of the resin having the functional group capable of reacting with and binding to the crosslinking agent. From the viewpoint of improving the cohesive force, the amount is preferably 0.05 parts by mass or more, and from the viewpoint of improving the adhesive force of the adhesive layer 20 to be formed, it is preferably 7 parts by mass or less. Moreover, as a crosslinking agent in the adhesive layer 20, you may use together other polyfunctional compounds, such as an epoxy resin, with a polyisocyanate compound.

  The content ratio of the high molecular weight component in the adhesive layer 20 is preferably 50 to 100% by mass, more preferably 50 to 80% by mass. The high molecular weight component is a component having a weight average molecular weight of 10,000 or more. Such a configuration is preferable in terms of achieving both adhesion of the adhesive layer 20 to a frame member such as a ring frame, which will be described later, at room temperature and in the vicinity thereof, and prevention of residue at the time of peeling. The adhesive layer 20 may include a liquid resin that is liquid at 23 ° C. When the adhesive layer 20 contains such a liquid resin, the content ratio of the liquid resin in the adhesive layer 20 is preferably 1 to 10% by mass, and more preferably 1 to 5% by mass. Such a configuration is preferable in terms of achieving both adhesion of the adhesive layer 20 to a frame member such as a ring frame, which will be described later, at room temperature and in the vicinity thereof, and prevention of residue at the time of peeling.

  The adhesive layer 20 may contain a filler. By blending the filler into the adhesive layer 20, the elastic modulus such as the tensile storage elastic modulus of the adhesive layer 20 and the physical properties such as conductivity and thermal conductivity can be adjusted. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are particularly preferable. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystal In addition to porous silica and amorphous silica, simple metals such as aluminum, gold, silver, copper, and nickel, alloys, amorphous carbon black, and graphite can be used. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. One type of filler may be blended in the adhesive layer 20, or two or more types of fillers may be blended. In order to ensure the cleaving property in the expanding step described later in the adhesive layer 20, the silica filler content of the adhesive layer 20 is preferably 10% by mass or more. In securing cohesive force in the adhesive layer 20 and preventing residues at the time of peeling from the frame member, the silica filler content in the adhesive layer 20 is preferably 40% by mass or less, more preferably It is 30 mass% or less, More preferably, it is 25 mass% or less.

  When the adhesive layer 20 contains a filler, the average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. The configuration in which the average particle size of the filler is 0.005 μm or more is suitable for realizing high wettability and adhesion to an adherend such as a semiconductor wafer in the adhesive layer 20. The structure that the average particle diameter of the said filler is 10 micrometers or less is suitable when securing heat resistance while enjoying sufficient filler addition effect in the adhesive layer 20. The average particle size of the filler can be determined using, for example, a photometric particle size distribution meter (trade name “LA-910”, manufactured by Horiba, Ltd.).

  The adhesive layer 20 may contain one or more other components as necessary. Examples of the other components include a flame retardant, a silane coupling agent, and an ion trap agent. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, hydrous antimony (eg, “IXE-300” manufactured by Toa Gosei Co., Ltd.), and zirconium phosphate having a specific structure (eg, “ IXE-100 "), magnesium silicate (for example," Kyoward 600 "manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (for example," Kyoword 700 "manufactured by Kyowa Chemical Industry Co., Ltd.) A compound capable of forming a complex with a metal ion can also be used as an ion trapping agent. Examples of such compounds include triazole compounds, tetrazole compounds, and bipyridyl compounds. Among these, a triazole compound is preferable from the viewpoint of the stability of a complex formed with a metal ion. Examples of such triazole compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy- 5-Methylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-tert-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-tert-butyl-5-methylphenyl) ) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) benzotriazole, 6- (2 -Benzotriazolyl) -4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1- (2,3-dihydroxypropyl) benzotriazole, 1- (1 , 2-Dicarboxydiethyl) ben Triazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t-pentyl-6-{(H-benzotriazol-1-yl) methyl} phenol, 2- (2-hydroxy-5- t-butylphenyl) -2H-benzotriazole, octyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2-ethylhexyl- 3- [3-t-Butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2- (2H-benzotriazol-2-yl) -6- (1 -Methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazol-2-yl) -4-tert-butylphenol, 2- (2- Hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-t-o Tylphenyl) -benzotriazole, 2- (3-t-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzo Triazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chloro-benzotriazole, 2- [2-hydroxy-3,5-di (1,1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazol-2-yl] -4- (1,1,3,3-tetramethylbutyl) phenol], 2- [2-hydroxy -3,5-bis (α, α-dimethylbenzyl) phenyl] -2H-benzotriazole and methyl-3- [3- (2H-benzotriazol-2-yl) -5-t-butyl-4- Hydroxyphenyl] propionate. In addition, a predetermined hydroxyl group-containing compound such as a quinol compound, a hydroxyanthraquinone compound, or a polyphenol compound can also be used as an ion trapping agent. Examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthralphine, tannin, gallic acid, methyl gallate, and pyrogallol.

  The thickness of the adhesive layer 20 is, for example, in the range of 1 to 200 μm, and preferably 7 to 30 μm. The configuration in which the thickness of the adhesive layer 20 is 7 μm or more means that the adhesive layer 20 to which the frame member is attached follows the fine irregularities on the surface of the frame member and has good frame member adhesion. It is preferable when exhibiting. The configuration that the thickness of the adhesive layer 20 is 30 μm or less is preferable in order to ensure the cleaving property in the expanding step described later in the adhesive layer 20.

  The adhesive layer 20 has an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a temperature rising rate of 10 ° C./minute for a 10 mm wide and 160 μm thick adhesive specimen. The tensile storage elastic modulus (first tensile storage elastic modulus) at 25 ° C. measured under the conditions of 5 to 120 MPa. The first tensile storage elastic modulus is preferably 6 MPa or more, more preferably 7 MPa or more, and preferably 110 MPa or less, more preferably 100 MPa or less.

  The pressure-sensitive adhesive layer 20 has a width of 5 mm and a thickness of 80 μm for a sample piece of the pressure-sensitive adhesive layer having an initial chuck distance of 10 mm, a frequency of 900 Hz, a dynamic strain of 0.005%, and a heating rate of 5 ° C./min. The tensile storage elastic modulus (second tensile storage elastic modulus) at −15 ° C. measured at ˜15 ° C. is 3000 to 6000 MPa. The second tensile storage elastic modulus is preferably 3200 MPa or more, more preferably 3500 MPa or more, and preferably 5800 MPa or less, more preferably 5500 MPa or less.

Shear adhesive strength at -15 ° C. for SUS plane in the adhesive layer 20 is preferably 66N / cm ² or more, more preferably 68N / cm ² or more, more preferably 70N / cm ² or more. The shear adhesive strength is a value measured by a shear adhesive strength measuring method described later with respect to the examples. The said structure regarding a shear adhesive force is suitable when ensuring holding | maintenance of the frame member by the dicing die-bonding film X at -15 degreeC and the low temperature of the vicinity.

  In this embodiment, in the in-plane direction D of the dicing die-bonding film X, the outer peripheral end 20e of the adhesive layer 20 from the outer peripheral end 11e of the base material 11 and the outer peripheral end 12e of the adhesive layer 12 in the dicing tape 10 is The distance is within 1000 μm, preferably within 700 μm, more preferably within 500 μm, and more preferably within 300 μm. That is, the outer peripheral edge 20e of the adhesive layer 20 extends from the inner 1000 μm to the outer 1000 μm with respect to the outer peripheral edges 11e and 12e of the base material 11 and the pressure-sensitive adhesive layer 12 in the film in-plane direction D over the entire circumference. Preferably between the inner 700 μm and the outer 700 μm, more preferably between the inner 500 μm and the outer 500 μm, more preferably between the inner 300 μm and the outer 300 μm. In the configuration in which the dicing tape 10 or the pressure-sensitive adhesive layer 12 and the adhesive layer 20 thereon have substantially the same dimension in the in-plane direction D, the adhesive layer 20 is as described above. In addition to the work sticking area, the frame member sticking area is included on the surface 20a side.

In the dicing die-bonding film X, when the pressure-sensitive adhesive layer 12 of the dicing tape 10 is a radiation curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer before radiation curing in a T-type peel test under conditions of 23 ° C. and a peel speed of 300 mm / min. The peeling force between 12 and the adhesive layer 20 is preferably 0.6 N / 20 mm or more. Such a T-type peel test can be performed using a tensile tester (trade name “Autograph AGS-J”, manufactured by Shimadzu Corporation). A sample piece to be used for the test is produced as follows. First, in the dicing die bond film X, the adhesive layer 12 is cured by irradiating the adhesive layer 12 with ultraviolet rays of 350 mJ / cm ² from the substrate 11 side. Next, after attaching a backing tape (trade name “BT-315”, manufactured by Nitto Denko Corporation) to the adhesive layer 20 side of the dicing die bond film X, a sample piece having a size of width 50 mm × length 120 mm. Cut out.

  The dicing die-bonding film X may be accompanied by a separator S as shown in FIG. Specifically, each dicing die-bonding film X may take the form of a sheet with a separator S, or the separator S is long, on which a plurality of dicing die-bonding films X are arranged and the separator S May be wound into the form of a roll. The separator S is an element for covering and protecting the surface of the adhesive layer 20 of the dicing die bond film X. When the dicing die bond film X is used, the separator S is peeled off from the film. Examples of the separator S include a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a plastic film or paper whose surface is coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate-type release agent. It is done. The thickness of the separator S is, for example, 5 to 200 μm.

  The dicing die-bonding film X having the above configuration can be manufactured, for example, as follows.

  First, as shown in FIG. 3A, the adhesive composition layer C <b> 1 is formed on the long separator S. The adhesive composition layer C1 can be formed by applying the adhesive composition prepared for forming the adhesive layer 20 on the separator S. Examples of the coating method of the adhesive composition include roll coating, screen coating, and gravure coating.

  Next, as shown in FIG.3 (b), the adhesive composition layer C2 is formed on the adhesive composition layer C1. The pressure-sensitive adhesive composition layer C2 can be formed by coating the pressure-sensitive adhesive composition prepared for forming the pressure-sensitive adhesive layer 12 on the pressure-sensitive adhesive composition C1. Examples of the coating method of the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating.

  Next, as shown in FIG. 3C, the adhesive layer 20 ′ is subjected to collective heat treatment of the adhesive composition layer C1 and the adhesive composition layer C2 on the separator S. And an adhesive layer 12 ′ is formed. In this heat treatment, both layers are dried as necessary, and a crosslinking reaction is caused in both layers as necessary. The heating temperature is, for example, 60 to 175 ° C., and the heating time is, for example, 0.5 to 5 minutes. The adhesive layer 20 ′ is processed and formed into the adhesive layer 20 described above. The pressure-sensitive adhesive layer 12 ′ is processed and formed into the pressure-sensitive adhesive layer 12 described above.

  Next, as shown in FIG.3 (d), base material 11 'is pressure-bonded and bonded together on adhesive layer 12'. The base material 11 ′ is processed and formed into the base material 11 described above. The resin base material 11 ′ is produced by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, or a dry lamination method. be able to. The film or base material 11 ′ after film formation is subjected to a predetermined surface treatment as necessary. In this step, the bonding temperature is, for example, 30 to 50 ° C, preferably 35 to 45 ° C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm, and preferably 1 to 10 kgf / cm. By this step, an elongated laminated sheet body having a laminated structure of the separator S, the adhesive layer 20 ′, the pressure-sensitive adhesive layer 12 ′, and the base material 11 ′ is obtained.

  Next, as shown to Fig.4 (a), the process which penetrates a process blade from the base material 11 'side to the separator S is given with respect to said laminated sheet body (In FIG.4 (a), it is a cutting location. Is schematically represented by a bold line). For example, while rotating a laminated sheet body at a constant speed in one direction F, it is arranged to be rotatable around an axis perpendicular to the direction F, and a rotary blade with a processing blade accompanying a roll surface with a processing blade for punching (illustrated) The surface with the processing blade (not shown) is brought into contact with the substrate 11 ′ side of the laminated sheet body with a predetermined pressing force. Thereby, the dicing tape 10 (base material 11, adhesive layer 12) and the adhesive layer 20 are processed and formed collectively. After a plurality of laminated bodies each including the dicing tape 10 and the adhesive layer 20 are processed and formed on the separator S in this manner, as shown in FIG. The material laminate around the tape 10 and the adhesive layer 20) is removed from the separator S.

  The dicing die bond film X can be manufactured as described above.

  In the manufacturing process of a semiconductor device, as described above, in order to obtain a semiconductor chip with a die bond film, an expanding process performed using a dicing die bond film, that is, an expanding process for cleaving may be performed. . In this expanding process, it is necessary that the die bond film can be cleaved by the expanding of the dicing tape 10 while the work such as the semiconductor wafer and the frame member such as the ring frame are both held by the dicing die bond film.

  As described above, the adhesive layer 20 as the die bond film of the dicing die bond film X according to the above-described embodiment has the first tensile storage elastic modulus at 25 ° C. of 5 to 120 MPa. Such a configuration is suitable for securing a bonding force at normal temperature to a frame member such as a ring frame in the dicing die bond film X or the adhesive layer 20 thereof. Specifically, this configuration is suitable for appropriately attaching the frame member to the dicing die-bonding film X or the adhesive layer 20 thereof at room temperature. In addition, this configuration is suitable for realizing a good adhesive force in the adhesive layer 20 at room temperature before and after the expanding step. The dicing die bond film X is required to have no adhesive residue on the frame member when it is peeled off from the frame member attached to the dicing die bond film X. From the viewpoint of preventing a residue at the time of peeling at room temperature in the layer 20, the first tensile storage elastic modulus at 25 ° C. is preferably 6 MPa or more, more preferably 7 MPa or more. From the viewpoint of realizing a high adhesive force at normal temperature to the frame member in the adhesive layer 20, the first tensile storage modulus at 25 ° C. is preferably 110 MPa or less, more preferably 100 MPa or less.

  At the same time, the adhesive layer 20 of the dicing die-bonding film X has a second tensile storage elastic modulus of 3,000 to 6000 MPa at −15 ° C. as described above. Such a configuration is suitable for cleaving the adhesive layer 20 in the expanding step performed at a low temperature of −15 ° C. and the vicinity thereof, and at a low temperature relative to the frame member in the adhesive layer 20. It is suitable for securing the sticking force. From the viewpoint of realizing good cleaving property at a low temperature in the adhesive layer 20, the second tensile storage elastic modulus at −15 ° C. is preferably 3200 MPa or more, more preferably 3500 MPa or more. From the viewpoint of realizing a high adhesive force at a low temperature in the adhesive layer 20, the second tensile storage elastic modulus at −15 ° C. is preferably 5800 MPa or less, more preferably 5500 MPa or less. As the adhesion force to the frame member at the temperature at which the expanding process is performed is higher, the peeling of the adhesive layer 20 or the dicing die bond film X from the frame member in the expanding process tends to be suppressed.

  As described above, the dicing die-bonding film X is suitable for realizing good adhesion to a frame member such as a ring frame while securing the cleaving property in the expanding process in the adhesive layer 20.

  In addition, the dicing die bond film X in which the dicing tape 10 or the pressure-sensitive adhesive layer 12 and the adhesive layer 20 thereon have substantially the same design dimensions in the film in-plane direction, The process for forming one dicing tape 10 having a laminated structure of the adhesive layer 11 and the pressure-sensitive adhesive layer 12 and the process for forming one adhesive layer 20 are performed by one process such as punching. Suitable for batch implementation. Such a dicing die-bonding film X is suitable for realizing good adhesion to the frame member while securing the cleaving property in the expanding process in the adhesive layer 20, and reducing the number of manufacturing processes and suppressing the manufacturing cost. It is suitable for efficient production in terms of

As described above, the shear adhesive strength at −15 ° C. with respect to the SUS plane in the adhesive layer 20 of the dicing die-bonding film X is preferably 66 N / cm ² or more, more preferably 68 N / cm ² or more, more preferably 70 N / cm ² or more. Such a configuration relating to the shear adhesive force is suitable for securing the holding of the frame member by the dicing die-bonding film X at −15 ° C. and in the vicinity thereof.

  As described above, the adhesive layer 20 of the dicing die-bonding film X preferably includes a polymer component having a weight average molecular weight of 800,000 to 2,000,000 and a glass transition temperature of -10 to 3 ° C. Such a configuration balances the cleaving property at a low temperature in the adhesive layer 20, the sticking force of the adhesive layer 20 to the frame member, and the prevention of the residue when the adhesive layer 20 is peeled off. It is suitable for planning. As described above, the weight average molecular weight of the polymer is more preferably 900000 or more, more preferably 1000000 from the viewpoint of securing the cleaving property at a low temperature in the adhesive layer 20 and the prevention of the residue at the time of peeling. That's it. As described above, from the viewpoint of securing the adhesive force of the adhesive layer 20 to the frame member, the weight average molecular weight of the polymer is more preferably 1800000 or less, and more preferably 1500000 or less. As described above, from the viewpoint of securing the cleaving property at a low temperature in the adhesive layer 20, the glass transition temperature of the polymer is more preferably −8 ° C. or more, more preferably −6.5 ° C. or more. is there. As described above, from the viewpoint of securing the adhesive strength to the frame member at a low temperature in the adhesive layer 20, the glass transition temperature of the polymer is more preferably 0 ° C. or less, more preferably −1.5 ° C. It is as follows.

  As described above, the pressure-sensitive adhesive layer 12 of the dicing tape 10 of the dicing die-bonding film X is preferably a radiation curable pressure-sensitive adhesive layer 12. When the dicing tape 10 pressure-sensitive adhesive layer 12 is a radiation-curing pressure-sensitive adhesive layer 12, the dicing die-bonding film X is a pressure-sensitive adhesive layer before radiation curing in a T-type peel test under conditions of 23 ° C. and a peel speed of 300 mm / min. As described above, the peel force between the adhesive layer 12 and the adhesive layer 20 is preferably 0.5 N / 20 mm or more. Such a configuration relating to the peel adhesive strength is preferable in securing the adhesion force to the frame member in the adhesive layer 20.

  5 to 10 show a semiconductor device manufacturing method according to an embodiment of the present invention.

  In this semiconductor device manufacturing method, first, as shown in FIGS. 5A and 5B, the division grooves 30a are formed in the semiconductor wafer W (division groove formation step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. Has been. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T1. A dividing groove 30a having a predetermined depth is formed on the first surface Wa side using a rotating blade such as a dicing device. The dividing groove 30a is a space for separating the semiconductor wafer W in units of semiconductor chips (the dividing groove 30a is schematically represented by a thick line in FIGS. 5 to 7).

  Next, as shown in FIG. 5C, the wafer processing tape T2 having the adhesive surface T2a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 from the semiconductor wafer W is bonded. Is peeled off.

  Next, as shown in FIG. 5D, in a state where the semiconductor wafer W is held on the wafer processing tape T2, thinning is performed by grinding from the second surface Wb until the semiconductor wafer W reaches a predetermined thickness. (Wafer thinning process). Grinding can be performed using a grinding apparatus provided with a grinding wheel. By this wafer thinning step, in this embodiment, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips 31 is formed. Specifically, the semiconductor wafer 30A has a portion (connecting portion) for connecting, on the second surface Wb side, portions that are to be separated into a plurality of semiconductor chips 31 on the wafer. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 μm, preferably 3 to 20 μm. It is.

Next, as shown in FIG. 6A, the semiconductor wafer 30 </ b> A held on the wafer processing tape T <b> 2 is bonded to the adhesive layer 20 of the dicing die bond film X. Thereafter, as shown in FIG. 6B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die-bonding film X is a radiation-curable pressure-sensitive adhesive layer, instead of the above-described radiation irradiation in the manufacturing process of the dicing die-bonding film X, the adhesive layer 20 of the semiconductor wafer 30A is used. After bonding, the adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the substrate 11 side. Irradiation dose is, for example, 50 to 500 mJ / cm ^2, preferably 100~300mJ / cm ^2. In the dicing die-bonding film X, the region (irradiation region R shown in FIG. 1) where irradiation is performed as a measure for reducing the adhesive strength of the adhesive layer 12 is, for example, in the adhesive layer 20 bonding region in the adhesive layer 12. This is an area excluding the peripheral edge.

  Next, after the ring frame 41 is pasted on the adhesive layer 20 in the dicing die bond film X, as shown in FIG. The holder 42 is fixed.

  Next, a first expanding process (cool expanding process) under relatively low temperature conditions is performed as shown in FIG. 7B, and the semiconductor wafer 30A is separated into a plurality of semiconductor chips 31. At the same time, the adhesive layer 20 of the dicing die-bonding film X is cleaved by the small adhesive layer 21 to obtain the semiconductor chip 31 with the adhesive layer. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised in contact with the dicing tape 10 on the lower side of the dicing die bond film X in the drawing, and the dicing of the dicing die bond film X to which the semiconductor wafer 30A is bonded. The tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed on the dicing tape 10 under the condition that a tensile stress within the range of preferably 15 to 32 MPa, more preferably 20 to 32 MPa is generated. The temperature condition in the cool expanding step is, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expansion speed (speed at which the push-up member 43 moves up) in the cool expanding step is preferably 0.1 to 100 mm / second. The amount of expansion in the cool expanding step is preferably 3 to 16 mm.

  In this step, the semiconductor wafer 30A is cleaved at a thin and easily broken portion, and the semiconductor chip 31 is separated. At the same time, in this step, deformation is suppressed in each region where each semiconductor chip 31 is in close contact with the adhesive layer 20 in close contact with the adhesive layer 12 of the dicing tape 10 to be expanded, Tensile stress generated in the dicing tape 10 acts on the portions facing the dividing grooves between the semiconductor chips 31 in a state where such a deformation suppressing action does not occur. As a result, a portion of the adhesive layer 20 facing the dividing groove between the semiconductor chips 31 is cleaved. After this step, as shown in FIG. 7C, the push-up member 43 is lowered, and the expanded state in the dicing tape 10 is released.

  Next, a second expanding step under relatively high temperature conditions is performed as shown in FIG. 8A, and the distance (separation distance) between the semiconductor chips 31 with the adhesive layer is increased. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised again, and the dicing tape 10 of the dicing die-bonding film X is expanded. The temperature condition in the second expanding step is, for example, 10 ° C. or higher, and preferably 15 to 30 ° C. The expansion speed (speed at which the push-up member 43 ascends) in the second expanding step is, for example, 0.1 to 10 mm / second, preferably 0.3 to 1 mm / second. Moreover, the amount of expansion in the second expanding step is, for example, 3 to 16 mm. In this step, the separation distance of the semiconductor chip 31 with the adhesive layer is increased to such an extent that the semiconductor chip 31 with the adhesive layer can be appropriately picked up from the dicing tape 10 in the pickup step described later. After this step, as shown in FIG. 8B, the push-up member 43 is lowered and the expanded state of the dicing tape 10 is released. In order to prevent the separation distance of the semiconductor chip 31 with the adhesive layer on the dicing tape 10 from being reduced after the expanded state is released, before the expanded state is released, the outside of the semiconductor chip 31 holding region in the dicing tape 10 is removed. It is preferable to heat and shrink the part.

  Next, after performing a cleaning process for cleaning the semiconductor chip 31 side of the dicing tape 10 with the adhesive chip with the adhesive chip layer 31 using a cleaning liquid such as water as necessary, as shown in FIG. The semiconductor chip 31 with an adhesive layer is picked up from the dicing tape 10 (pickup process). For example, the semiconductor chip 31 with an adhesive layer to be picked up is lifted through the dicing tape 10 by raising the pin member 44 of the pickup mechanism on the lower side of the dicing tape 10 in the figure, Hold by adsorption. In the pickup process, the push-up speed of the pin member 44 is 1 to 100 mm / second, for example, and the push-up amount of the pin member 44 is 50 to 3000 μm, for example.

  Next, as shown in FIG. 10A, the picked-up semiconductor chip 31 with an adhesive layer is temporarily fixed to a predetermined adherend 51 via the adhesive layer 21. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive force at 25 ° C. when the adhesive layer 21 is temporarily fixed is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 51. The configuration in which the shear adhesive strength of the adhesive layer 21 is 0.2 MPa or more is that the adhesive layer 21 and the semiconductor chip 31 or the adherend 51 are bonded by ultrasonic vibration or heating in the wire bonding step described later. It is suitable for performing wire bonding appropriately while suppressing the occurrence of shear deformation on the bonding surface.

  Next, as shown in FIG. 10B, an electrode pad (not shown) of the semiconductor chip 31 and a terminal portion (not shown) of the adherend 51 are electrically connected via a bonding wire 52 ( Wire bonding process). The connection between the electrode pad of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 is realized by ultrasonic welding with heating, and is performed so as not to thermoset the adhesive layer 21. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature in wire bonding is, for example, 80 to 250 ° C, and preferably 80 to 220 ° C. The heating time is several seconds to several minutes.

  Next, as shown in FIG. 10C, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wire 52 on the adherend 51 (sealing step). In this step, the thermosetting of the adhesive layer 21 proceeds. In this step, for example, the sealing resin 53 is formed by a transfer molding technique performed using a mold. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. When the curing of the sealing resin 53 does not sufficiently proceed in this step (sealing step), a post-curing step for completely curing the sealing resin 53 is performed after this step. Even if the adhesive layer 21 is not completely thermally cured in the sealing process, the adhesive layer 21 can be completely cured together with the sealing resin 53 in the post-curing process. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C., and the heating time is, for example, 0.5 to 8 hours.

  As described above, a semiconductor device can be manufactured.

  In the present embodiment, as described above, after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51, the wire bonding step is performed without the adhesive layer 21 being completely thermoset. Done. Instead of such a configuration, after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51, the wire bonding step may be performed after the adhesive layer 21 is thermally cured. .

  In the semiconductor device manufacturing method, after the process described above with reference to FIG. 5C, the wafer thinning shown in FIG. 11 is performed in place of the wafer thinning process described above with reference to FIG. You may perform a process. In the wafer thinning process shown in FIG. 11, the semiconductor wafer W is held on the wafer processing tape T2, and the wafer is thinned by grinding from the second surface Wb until reaching a predetermined thickness. A semiconductor wafer divided body 30B including a plurality of semiconductor chips 31 and held on the wafer processing tape T2 is formed. In this step, a technique of grinding the wafer (first technique) until the dividing groove 30a itself is exposed on the second surface Wb side may be adopted, or the dividing groove 30a may reach the dividing groove 30a from the second surface Wb side. A method of grinding the wafer to the front and then forming a semiconductor wafer divided body 30B by generating a crack between the divided groove 30a and the second surface Wb by the action of the pressing force from the rotary grindstone to the wafer (second Method). Depending on the method employed, the depth from the first surface Wa of the dividing groove 30a formed as described above with reference to FIGS. 5A and 5B is appropriately determined. . In FIG. 11, the dividing groove 30a that has undergone the first technique or the dividing groove 30a that has undergone the second technique and cracks connected thereto are schematically represented by thick lines. In the present embodiment, the semiconductor wafer divided body 30B thus manufactured is bonded to the dicing die bond film X in place of the semiconductor wafer 30A described above, and is described above with reference to FIGS. Each process may be performed.

  12A and 12B show a first expanding process (cool expanding process) performed after the semiconductor wafer divided body 30B is bonded to the dicing die bond film X. FIG. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised in contact with the dicing tape 10 on the lower side of the dicing die bond film X in the drawing, and the dicing die bond film X to which the semiconductor wafer divided body 30B is bonded is attached. The dicing tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B. This expansion is performed in the dicing tape 10 under the condition that a tensile stress within a range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa is generated. The temperature condition in this step is, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is preferably 1 to 500 mm / sec. Moreover, the amount of expand in this process becomes like this. Preferably it is 50-200 mm. By such a cool expanding process, the adhesive layer 20 of the dicing die-bonding film X is cleaved into small pieces of the adhesive layer 21 to obtain the semiconductor chip 31 with the adhesive layer. Specifically, in this step, in the adhesive layer 20 in close contact with the adhesive layer 12 of the expanded dicing tape 10, in each region where the semiconductor chips 31 of the semiconductor wafer divided body 30B are in close contact with each other. While deformation is suppressed, tensile stress generated in the dicing tape 10 acts on the portion facing the dividing groove 30a between the semiconductor chips 31 in a state where such deformation suppression action does not occur. As a result, a portion of the adhesive layer 20 facing the dividing groove 30a between the semiconductor chips 31 is cleaved.

  In the semiconductor device manufacturing method of the present embodiment, instead of the above-described configuration in which the semiconductor wafer 30A or the semiconductor wafer divided body 30B is bonded to the dicing die bond film X, the dicing die bond film X is as follows. The semiconductor wafer 30C manufactured in this way may be bonded.

As shown in FIGS. 13A and 13B, first, the modified region 30 b is formed in the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. Has been. In this process, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T3 and collected inside the wafer. A laser beam with a light spot aligned is irradiated along the planned dividing line to the semiconductor wafer W from the side opposite to the wafer processing tape T3, and the semiconductor wafer W is irradiated into the semiconductor wafer W due to ablation by multiphoton absorption. A modified region 30b is formed. The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor chips. A method for forming the modified region 30b on the division line by laser light irradiation in the semiconductor wafer is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. In this method, the laser light irradiation conditions in the present embodiment are adjusted as appropriate within the range of the following conditions, for example.
<Laser irradiation conditions>
(A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser Wavelength 1064 nm
Laser light spot cross section 3.14 × 10 ^-8 cm ²
Oscillation form Q switch pulse Repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00
Polarization characteristics Linearly polarized light (B) condenser lens Magnification 100 times or less NA 0.55
Transmittance with respect to laser light wavelength 100% or less (C) Moving speed of mounting table on which semiconductor substrate is mounted 280 mm / sec or less

  Next, in a state where the semiconductor wafer W is held on the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until reaching a predetermined thickness, as shown in FIG. As shown, a semiconductor wafer 30C that can be singulated is formed on a plurality of semiconductor chips 31 (wafer thinning step). In this embodiment, after the semiconductor wafer 30C produced as described above is bonded to the dicing die bond film X instead of the semiconductor wafer 30A, each process described above with reference to FIGS. 6 to 10 is performed. It may be done.

  14A and 14B show a first expanding step (cool expanding step) performed after the semiconductor wafer 30C is bonded to the dicing die bond film X. FIG. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised in contact with the dicing tape 10 on the lower side of the dicing die bond film X in the drawing, and the dicing of the dicing die bond film X to which the semiconductor wafer 30C is bonded is dicing. The tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expansion is performed in the dicing tape 10 under the condition that a tensile stress within a range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa is generated. The temperature condition in this step is, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is preferably 1 to 500 mm / sec. Moreover, the amount of expand in this process becomes like this. Preferably it is 50-200 mm. By such a cool expanding process, the adhesive layer 20 of the dicing die-bonding film X is cleaved into small pieces of the adhesive layer 21 to obtain the semiconductor chip 31 with the adhesive layer. Specifically, in this step, cracks are formed in the fragile modified region 30b of the semiconductor wafer 30C, and the semiconductor chips 31 are separated. At the same time, in this step, in the adhesive layer 20 in close contact with the adhesive layer 12 of the dicing tape 10 to be expanded, deformation is suppressed in each region where the semiconductor chips 31 of the semiconductor wafer 30C are in close contact. On the other hand, tensile stress generated in the dicing tape 10 acts on a portion of the wafer facing the crack formation portion in a state where such a deformation suppressing action does not occur. As a result, in the adhesive layer 20, a portion facing the crack formation portion between the semiconductor chips 31 is cleaved.

  As described above, the dicing die bond film X can be used for obtaining a semiconductor chip with an adhesive layer. The dicing die-bonding film X can also be used for obtaining a semiconductor chip with an adhesive layer in a case where a plurality of semiconductor chips are stacked and three-dimensionally mounted. Between the semiconductor chips 31 in such a three-dimensional mounting, a spacer may be interposed together with the adhesive layer 21, or a spacer may not be interposed.

<Production of dicing tape>
In a reaction vessel equipped with a cooling pipe, a nitrogen introduction pipe, a thermometer, and a stirring device, 100 mol parts of dodecyl acrylate, 20 mol parts of 2-hydroxyethyl acrylate (2HEA), and 100 masses of these monomer components A mixture containing 0.2 part by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent with respect to parts was stirred at 60 ° C. for 10 hours under a nitrogen atmosphere (polymerization reaction). Thus, a polymer solution containing the acrylic polymer P ₁ was obtained. The weight average molecular weight (Mw) of the acrylic polymer P _{1 in} the polymer solution was 450,000. Next, a mixture containing the polymer solution containing the acrylic polymer P ₁ , 2-methacryloyloxyethyl isocyanate (MOI) and dibutyltin dilaurate as an addition reaction catalyst was allowed to stand at room temperature for 48 hours in an air atmosphere. Stir (addition reaction). In the reaction solution, the molar ratio of the MOI blending amount relative to the total amount of 2HEA-derived units or their hydroxyl groups in the acrylic polymer P ₁ is 0.2. In the reaction solution, the amount of dibutyltin dilaurate is 0.03 parts by mass with respect to 100 parts by mass of the acrylic polymer P ₁ . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in the side chain was obtained. Next, 0.75 parts by mass of a polyisocyanate compound (trade name “Coronate L”, manufactured by Tosoh Corporation) and 2 parts by mass of photopolymerization are started with respect to 100 parts by mass of the acrylic polymer P _2. (Added product name “Irgacure 184”, manufactured by BASF) and mixed, and the mixture is diluted with toluene so that the viscosity of the mixture at room temperature is 500 mPa · s, and an adhesive solution Got. Next, an adhesive solution is applied to the silicone release surface of a PET separator (thickness 38 μm) having a surface subjected to a silicone release treatment using an applicator to form a coating film. Was heated and dried at 130 ° C. for 2 minutes to form a 10 μm thick adhesive layer on the PET separator. Next, using a laminator, a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name “RB-0103”, thickness 125 μm, manufactured by Kurashiki Boseki Co., Ltd.) is used on the exposed surface of the adhesive layer. Were bonded together at room temperature. A dicing tape was produced as described above.

<Formation of adhesive layer>
60 parts by mass of acrylic resin A ₁ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1000000, glass transition temperature −1.5 ° C.), solid phenol resin (trade name) “MEH-7851SS”, solid at 23 ° C., made by Meiwa Kasei Co., Ltd.) 15 parts by mass and silica filler (trade name “SO-E2”, average particle size is 0.5 μm, made by Admatechs Co., Ltd.) 25 parts by mass Were added to methyl ethyl ketone and mixed, and the concentration was adjusted so that the viscosity at room temperature was 1000 mPa · s to obtain an adhesive composition. Next, an adhesive composition is applied to the release treatment surface of a PET separator (thickness 38 μm) having a release treatment surface using an applicator to form a coating film. Heat-drying was performed at 130 ° C. for 2 minutes to form an adhesive layer as a die bond film having a thickness of 10 μm on the PET separator.

<Production of dicing die bond film>
After peeling the PET separator from the dicing tape, the pressure-sensitive adhesive layer exposed in the dicing tape and the above-mentioned adhesive layer with the PET separator are bonded together at room temperature using a laminator, and a laminated sheet body is obtained. Obtained. Next, the laminated sheet body was subjected to a punching process in which a processing blade was inserted from the EVA substrate side of the dicing tape to the separator. Specifically, while flowing the laminated sheet body at a speed of 10 m / min in one direction, the Thomson blade for circular punching was disposed around the roll surface so as to be rotatable around an axis perpendicular to the direction. The surface with the processing blade of the rotary roll with the processing blade was brought into contact with the EVA base material side of the laminated sheet body with a predetermined pressing force, and punching was performed. The circumferential length of the rotating roll used for this punching, that is, the circumferential length is 378.9 mm. Further, the Thomson blade wound around the surface of the rotating roll is made of SUS and is arranged on the surface of the roll so that a circle with a diameter of 370 mm can be punched. The angle is 50 °. By such a punching process, the dicing tape and the adhesive layer were collectively formed into a disk shape, and a dicing die bond film was formed on the separator. Thereafter, the material laminate around the formed dicing die bond film was removed from the separator. As described above, a dicing die bond film of Example 1 having a laminated structure including a dicing tape and an adhesive layer as a die bond film was produced. The composition of the adhesive layer in Example 1 is listed in Table 1 together with the adhesive layer compositions of other Examples and Comparative Examples (in Table 1, the unit of each numerical value regarding the adhesive layer composition is Relative "parts by mass" within the layer).

[Example 2]
The amount of acrylic resin A ₁ was changed to 48 parts by mass instead of 60 parts by mass, and the amount of solid phenol resin (trade name “MEH-78511SS”, manufactured by Meiwa Kasei Co., Ltd.) was changed to 15 parts by mass. Adhesive bonding of Example 1 except that it was 40 parts by mass instead of 25 parts by mass, and the amount of silica filler (trade name “SO-E2”, manufactured by Admatex Co., Ltd.) was changed to 40 parts by mass. The adhesive layer (thickness 10 μm) in Example 2 was produced on the PET separator in the same manner as the agent layer. And the dicing die-bonding film of Example 2 was made in the same manner as the dicing die-bonding film of Example 1 except that the adhesive layer in Example 2 was used instead of the adhesive layer in Example 1. Produced.

Example 3
Instead of 60 parts by mass of acrylic resin A ₁ , acrylic resin A ₂ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1000000, glass transition temperature −6.5 ° C.) 60 The adhesive layer in Example 3 (thickness 10 μm) was produced on a PET separator in the same manner as in the adhesive layer of Example 1 except that the parts by mass were used. And the dicing die-bonding film of Example 3 was made in the same manner as the dicing die-bonding film of Example 1 except that the adhesive layer in Example 3 was used instead of the adhesive layer in Example 1. Produced.

Example 4
Acrylic resin A ₁ instead of 60 parts by mass of acrylic resin A ₂ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1000000, glass transition temperature −6.5 ° C.) 48 The use of parts by mass, the amount of solid phenolic resin (trade name “MEH-78511SS”, manufactured by Meiwa Kasei Co., Ltd.) being 12 parts by mass instead of 15 parts by mass, and silica filler (trade name “ The adhesive strength in Example 4 was the same as that of Example 1 except that the blending amount of “SO-E2” (manufactured by Admatex Co., Ltd.) was changed to 40 parts by mass instead of 25 parts by mass An agent layer (thickness 10 μm) was prepared on a PET separator. And the dicing die-bonding film of Example 4 was made in the same manner as the dicing die-bonding film of Example 1 except that the adhesive layer in Example 4 was used instead of the adhesive layer in Example 1. Produced.

[Comparative Example 1]
In place of 60 parts by mass of acrylic resin A ₁ , acrylic resin A ₃ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile, and glycidyl methacrylate, weight average molecular weight 1000000, glass transition temperature 4 ° C.) 42.4 mass The amount of solid phenolic resin (trade name “MEH-78511SS”, manufactured by Meiwa Kasei Co., Ltd.) was changed to 10.6 parts by weight instead of 15 parts by weight, and silica filler (trade name) In the same manner as in the adhesive layer of Example 1, except that the blending amount of “SO-E2” (manufactured by Admatechs Co., Ltd.) was changed to 47 parts by mass instead of 25 parts by mass, An adhesive layer (thickness 10 μm) was prepared on a PET separator. And the dicing die-bonding film of the comparative example 1 was carried out similarly to the dicing die-bonding film of the example 1 except having used the said adhesive layer in the comparative example 1 instead of the adhesive layer in the example 1. Produced.

[Comparative Example 2]
Acrylic resin A ₁ instead of 60 parts by mass of acrylic resin A ₂ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1000000, glass transition temperature −6.5 ° C.) 48 The use of parts by mass, the amount of solid phenol resin (trade name “MEH-78511SS”, manufactured by Meiwa Kasei Co., Ltd.) was changed to 20 parts by mass instead of 15 parts by mass, and no silica filler was used. Except for this, the adhesive layer (thickness 10 μm) in Comparative Example 2 was prepared on a PET separator in the same manner as in the adhesive layer of Example 1. And the dicing die-bonding film of the comparative example 2 was used like the dicing die-bonding film of the example 1 except having used the said adhesive layer in the comparative example 2 instead of the adhesive layer in Example 1. Produced.

[First tensile storage modulus (25 ° C)]
Based on the dynamic viscoelasticity measurement performed using the dynamic viscoelasticity measuring apparatus (trade name “RSAIII”, manufactured by TA Instruments) for each of the adhesive layers in Examples 1 to 4 and Comparative Examples 1 and 2. The tensile storage modulus at 25 ° C. (first tensile storage modulus) was examined. A sample piece to be subjected to dynamic viscoelasticity measurement was prepared by forming a laminate in which each adhesive layer was laminated to a thickness of 160 μm, and then cutting out from the laminate in a size of width 10 mm × length 30 mm. . In this measurement, the distance between the chucks for holding the sample piece is 22.5 mm, the measurement mode is the tension mode, the measurement temperature range is −30 ° C. to 100 ° C., the frequency is 1 Hz, and the dynamic strain is set. Was 0.005%, and the heating rate was 10 ° C./min. The obtained tensile storage modulus (MPa) at 25 ° C. is listed in Table 1.

[Second tensile storage modulus (−15 ° C.)]
For each of the adhesive layers in Examples 1 to 4 and Comparative Examples 1 and 2, dynamic viscoelasticity measurement is performed using a dynamic viscoelasticity measuring apparatus (trade name “Rheogel-E4000”, manufactured by UBM). Based on this, the tensile storage modulus (second tensile storage modulus) at −15 ° C. was examined. Sample pieces to be subjected to dynamic viscoelasticity measurement were prepared by forming a laminate in which each adhesive layer was laminated to a thickness of 80 μm, and then cutting out from the laminate in a size of 5 mm wide × 25 mm long. . In this measurement, the distance between the chucks for holding the sample piece is 10 mm, the measurement mode is the tension mode, the measurement temperature range is −30 ° C. to 100 ° C., the frequency is 900 Hz, and the dynamic strain is 0. 0.005% and the heating rate was 5 ° C./min. The obtained second tensile storage elastic modulus (MPa) at −15 ° C. is listed in Table 1.

<Shear adhesive strength>
About each dicing die-bonding film of Examples 1-4 and Comparative Examples 1 and 2, the shear adhesive force at -15 degreeC with respect to a SUS board was measured. The sample piece used for this measurement was produced as follows. First, in the dicing die bond film, the adhesive layer was peeled from the dicing tape. Next, a backing tape (trade name “BT-315”, manufactured by Nitto Denko Corporation) was bonded to the surface of the adhesive layer that had been bonded to the dicing tape. And the sample piece of the size of width 10mm x length 100mm was cut out from the obtained backing adhesive layer.

The produced sample piece was bonded to the SUS plate at room temperature. This SUS board has undergone a surface cleaning treatment by wiping with a non-woven wiper soaked with toluene and wiping with a non-woven wiper soaked with methanol. In the laminating operation, a 10 mm × 10 mm region at one end of the sample was pressed against the end of the SUS plate with a single reciprocating load by a 2 kg roller. And about the said sample piece and SUS board, after leaving for 30 minutes at room temperature, the shear adhesive force was measured using the tension tester (brand name "Autograph AGS-J", Shimadzu Corporation make). In this measurement, the measurement temperature was −15 ° C., the tensile speed was 1000 mm / min, and the obtained maximum stress value was defined as shear adhesive strength (N / cm ² ).

<Frame retention at 23 ° C>
About each dicing die-bonding film of Examples 1-4 and Comparative Examples 1 and 2, the sticking property thru | or holding | maintenance property with respect to a ring frame were investigated as follows. First, using a bonding apparatus (MA-3000II, manufactured by Nitto Seiki Co., Ltd.), a 12-inch diameter SUS ring frame (manufactured by Disco Corporation) was bonded to the adhesive layer side of the dicing die bond film. . This bonding was performed under the conditions of a bonding speed of 10 mm / second and a temperature of 60 ° C. Then, it stored in the case in a horizontal state and left standing for 1 week at room temperature. And the presence or absence of peeling of the ring frame from the adhesive layer was confirmed. The case where the peeling of the ring frame from the dicing die bond film or its adhesive layer did not occur was evaluated as good, and the case where the ring frame peeled off was evaluated as poor. The evaluation results are listed in Table 1.

[Cleavageability in the cool expanding process (-15 ° C)]
Using each of the dicing die bond films of Examples 1 to 4 and Comparative Examples 1 and 4, the following laminating step, the first expanding step for cutting (cool expanding step), and the first for separating 2 The expansion process (room temperature expansion process) was performed.

  In the bonding step, the semiconductor wafer divided body held on the wafer processing tape (trade name “UB-3083D”, manufactured by Nitto Denko Corporation) is bonded to the adhesive layer of the dicing die bond film, and then The wafer processing tape was peeled from the semiconductor wafer divided body. In laminating, a laminator was used, the laminating speed was 10 mm / sec, the temperature condition was 60 ° C., and the pressure condition was 0.15 MPa. The semiconductor wafer divided body is prepared and prepared as follows. First, a bare wafer (diameter 12 inches, thickness 780 μm, manufactured by Tokyo Chemical Industry Co., Ltd.) held on a wafer processing tape (trade name “V12S-R2-P”, manufactured by Nitto Denko Corporation) with a ring frame. From one side, using a dicing device (trade name “DFD6260”, manufactured by Disco Corporation), the rotating blade is used to separate the divided grooves (width 25 μm, depth 50 μm, section 6 mm × 12 mm grid) was formed. Next, a wafer processing tape (trade name “UB-3083D”, manufactured by Nitto Denko Corporation) is bonded to the split groove forming surface, and then the wafer processing tape (trade name “V12S-R2-P”) is used. Was peeled from the wafer. Thereafter, using a back grinder (trade name “DGP8760”, manufactured by DISCO Corporation), the wafer is ground by grinding from the other side of the wafer (the surface on which no dividing grooves are formed) to a thickness of 20 μm. Then, the ground surface was mirror-finished by dry polishing using the same apparatus. As described above, a semiconductor wafer divided body (in a state of being held on the wafer processing tape) was formed. The semiconductor wafer divided body includes a plurality of semiconductor chips (6 mm × 12 mm).

  The cool expanding process was performed in the cool expanding unit using a die separation apparatus (trade name “Die Separator DDS3200”, manufactured by DISCO Corporation). Specifically, first, an SUS ring frame having a diameter of 12 inches (inc. Disco) was attached at room temperature. Next, the dicing die-bonding film was set in an apparatus, and a dicing tape of a dicing die-bonding film with a semiconductor wafer divided body was expanded by a cool expanding unit of the apparatus. In this cool expanding step, the temperature is −15 ° C., the expanding speed is 300 mm / sec, and the expanding amount is 15 mm.

  The room temperature expanding process was performed in the room temperature expanding unit using a die separation apparatus (trade name “Die Separator DDS3200”, manufactured by DISCO Corporation). Specifically, a dicing tape of a dicing die-bonding film with a semiconductor wafer divided body that has undergone the above-described cool expanding process was expanded in the room temperature expanding unit of the same apparatus. In this room temperature expanding step, the temperature is 23 ° C., the expanding speed is 1 mm / sec, and the expanding amount is 10 mm. Then, the heat-shrink process was performed about the dicing die-bonding film which passed through the normal temperature expand. The processing temperature is 200 ° C. and the processing time is 20 seconds.

  In the stage through the above-described processes performed using the dicing die-bonding films of Examples 1 to 4 and Comparative Examples 1 and 2, the clogged adhesive was divided with respect to the total number of semiconductor chips included in the semiconductor wafer divided body. The ratio of the total number of semiconductor chips with an adhesive layer was examined. And about the cleaving property of an adhesive bond layer, the case where the said ratio was 80% or more was evaluated as favorable, and the case where the said ratio was less than 80% was evaluated as bad. The evaluation results are listed in Table 1.

[Evaluation]
As for the dicing die-bonding films of Examples 1 to 4, good results were obtained for both the frame retention and the cleaving property in the cool expansion step (−15 ° C.). On the other hand, the dicing die-bonding film of Comparative Example 1 could not hold the ring frame with the adhesive layer because the adhesive layer had too high tensile storage elastic modulus. Therefore, the cool expanding process using the dicing die-bonding film of Comparative Example 1 could not be performed. Moreover, in the dicing die-bonding film of Comparative Example 2, since the tensile storage modulus of the adhesive layer was too low, the adhesive layer could not be sufficiently cleaved in the cool expanding step.

X Dicing die bond film 10 Dicing tape 11 Base material 11e Outer peripheral edge 12 Adhesive layer 12e Outer peripheral edge 20, 21 Adhesive layer 20e Outer peripheral edge W, 30A, 30C Semiconductor wafer 30B Semiconductor wafer divided body 30a Divided groove 30b Modified region 31 Semiconductor chip

Claims (8)

A dicing tape having a laminated structure including a base material and an adhesive layer;
An adhesive layer that is detachably attached to the pressure-sensitive adhesive layer in the dicing tape,
The adhesive layer has an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a temperature rising rate of 10 ° C./minute for a 10 mm wide and 160 μm thick adhesive specimen sample. The tensile storage modulus at 25 ° C. measured under the conditions of 5 to 120 MPa, and
The pressure-sensitive adhesive layer has a width of 5 mm and a thickness of 80 μm, and an initial chuck distance of 10 mm, a frequency of 900 Hz, a dynamic strain of 0.005%, and a heating rate of 5 ° C./min. A dicing die-bonding film having a tensile storage elastic modulus of 3,000 to 6000 MPa measured at −15 ° C.   The dicing die-bonding film according to claim 1, wherein the outer peripheral edge of the adhesive layer is at a distance within 1000 μm from the outer peripheral edge of the pressure-sensitive adhesive layer in the in-plane direction of the film. The dicing die-bonding film according to claim 1, wherein a shear adhesive strength at −15 ° C. with respect to the SUS plane in the adhesive layer is 66 N / cm ² or more.   The dicing die-bonding film according to any one of claims 1 to 3, wherein the adhesive layer includes a polymer component having a weight average molecular weight of 800,000 to 2,000,000 and a glass transition temperature of -10 to 3 ° C.   The dicing die-bonding film according to claim 4, wherein the polymer component includes a structural unit derived from acrylonitrile.   The dicing die-bonding film according to claim 1, wherein the adhesive layer contains a silica filler in a proportion of 10 to 40% by mass. The pressure-sensitive adhesive layer is a radiation curable pressure-sensitive adhesive layer,
In a T-type peel test under conditions of 23 ° C. and a peel rate of 300 mm / min, the peel force between the pressure-sensitive adhesive layer and the adhesive layer before radiation curing is 0.5 N / 20 mm or more. The dicing die-bonding film according to any one of claims 1 to 6.   The dicing die-bonding film according to claim 1, wherein the adhesive layer has a thickness of 7 to 30 μm.

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