KR20190133604A - Dicing die bonding film - Google Patents

Abstract

Provided by the present invention is a dicing die bond film which has a curable pressure-sensitive adhesive layer appropriate to achieve good adhesion to a frame member such as a ring frame while securing cutability in an expansion process. The dicing die bond film X of the present invention has a dicing tape (10) and a curable pressure-sensitive adhesive layer (20). The dicing tape (10) has a laminated structure including a base material (11) and an adhesive layer (12). The curable pressure-sensitive adhesive layer (20) is closely in contact with the adhesive layer (12) to be detached. The curable pressure-sensitive adhesive layer (20) has a tensile storage modulus of 5-120 MPa at 25°C measured under predetermined conditions about a sample piece of the curable pressure-sensitive adhesive layer having a width of 10 mm and a thickness of 160 μm. At the same time, the curable pressure-sensitive layer (20) has a tensile storage modulus of 3,000-6,000 MPa at -15°C measured under predetermined conditions about a sample piece of the curable pressure-sensitive layer having a width of 5 mm and a thickness of 80 μm.

Description

Dicing die bond film {DICING DIE BONDING FILM}

The present invention relates to a dicing die bond film that can be used in the manufacturing process of a semiconductor device.

In the manufacturing process of a semiconductor device, a dicing die bond film may be used in order to obtain the semiconductor chip with an adhesive film of the die-bonding chip equivalent size, ie, the semiconductor chip provided with the die bond film. The dicing die bond film has a size corresponding to a semiconductor wafer to be processed, and is, for example, a dicing tape composed of a base material and an adhesive layer, and a die bond film (adhesive layer) that is in close contact with the adhesive layer side in a removable manner. Have

As a method of obtaining a semiconductor chip having a die bond film using a dicing die bond film, a method of expanding a dicing tape in a dicing die bond film to cut a die bond film Known. In this method, a semiconductor wafer is first bonded on the die bond film of a dicing die bond film. This semiconductor wafer is processed so that it may be cut | disconnected later with a die bond film, for example, and it can be separated into several semiconductor chips. Next, in order to cut the die bond film so that a plurality of die bond film fragments, each of which is in close contact with the semiconductor chip, are generated from the die bond film on the dicing tape, an expander is used to die the die of the dicing die bond film. Singh tape is expanded. In this expanding step, the splitting occurs in the semiconductor wafer on the die-bonding film at a position corresponding to the cutting-off point in the die-bonding film, and the semiconductor wafer is divided into a plurality of semiconductor chips on the dicing die-bonding film or the dicing tape. It is reorganized. Next, in order to increase the separation distance with respect to the semiconductor chip provided with the some die-bonding film after dividing on a dicing tape, an expansion process is performed again. Next, after passing through a cleaning process, for example, each semiconductor chip is pushed up by the pin member of the pick-up mechanism from the lower side of the dicing tape together with the die bond film of the chip equivalent size adhered thereto. Picked up from above the tape. In this way, a semiconductor chip with a die bond film is obtained. The semiconductor chip provided with this die bond film is fixed by die bonding to adherends, such as a mounting board | substrate, through this die bond film. For example, about the technique regarding the dicing die bond film used as mentioned above, it describes in following patent documents 1-3, for example.

Japanese Patent Publication No. 2007-2173 Japanese Patent Laid-Open No. 2010-177401 Japanese Patent Laid-Open No. 2012-23161

FIG. 15: shows the conventional dicing die bond film Y in the cross-sectional schematic diagram. The dicing die bond film Y consists of the dicing tape 60 and the die bond film 70. The dicing tape 60 has the laminated structure of the base material 61 and the adhesive layer 62 which exhibits adhesive force. The die bond film 70 is in close contact with the pressure-sensitive adhesive layer 62 in accordance with the pressure-sensitive adhesive force of the pressure-sensitive adhesive layer 62. Such a dicing die bond film Y has a disk shape of a size corresponding to a semiconductor wafer which is a processing target or a workpiece in a manufacturing process of a semiconductor device, and can be used in the above-described expansion step. For example, as shown in FIG. 16, the above-mentioned expansion process in the state in which the semiconductor wafer 81 is bonded to the die bond film 70, and the ring frame 82 is affixed on the adhesive layer 62. FIG. This is carried out. The semiconductor wafer 81 is processed so that it can be separated into a some semiconductor chip, for example.

The ring frame 82 is a frame member which conveyance mechanisms, such as a conveyance arm with which an expander is equipped, mechanically contact at the time of workpiece conveyance in the state attached to the dicing die bond film Y. FIG. The conventional dicing die bond film Y is designed such that the ring frame 82 can be fixed to the film according to the adhesive force of the pressure-sensitive adhesive layer 62 of the dicing tape 60. That is, the conventional dicing die bond film Y has a design in which the ring frame adhesion region is secured around the die bond film 70 in the pressure-sensitive adhesive layer 62 of the dicing tape 60. In such a design, the distance in the film plane direction between the outer peripheral end 62e of the adhesive layer 62 and the outer peripheral end 70e of the die bond film 70 is about 10-30 mm.

This invention is devised based on the above circumstances, The objective is the adhesive agent layer as a die-bonding film suitable for realizing favorable adhesiveness to a frame member, such as a ring frame, while ensuring the cutting property in an expand process. It is providing the dicing die bond film provided with.

The dicing die bond film provided by this invention is equipped with the dicing tape and the adhesive agent layer as a die bond film. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive agent layer is in close contact with the pressure-sensitive adhesive layer in the dicing tape so that peeling is possible. The adhesive layer has a tensile storage at 25 ° C. measured under conditions of an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a temperature increase rate of 10 ° C./min for a sample of an adhesive layer of 10 mm in width and 160 μm in thickness. Elastic modulus (1st tensile storage elastic modulus) is 5-120 Mpa. In addition, the adhesive agent layer is -15 degreeC measured on the conditions of the initial chuck distance 10mm, the frequency 900Hz, the dynamic strain 0.005%, and the temperature increase rate of 5 degree-C / min with respect to the sample piece of the adhesive agent layer of width 5mm and thickness 80micrometer. The tensile storage modulus (second tensile storage modulus) of is 3000 to 6000 MPa. The dicing die bond film of such a structure can be used for obtaining the semiconductor chip provided with the die bond film in the manufacturing process of a semiconductor device.

In the manufacturing process of a semiconductor device, as mentioned above, in obtaining the semiconductor chip provided with the die bond film, the expansion process performed using a dicing die bond film, ie, the expansion process for cutting | disconnection is performed, There is a case. In this expanding step, the die bond film needs to be cut by the expansion of the dicing tape while both the work such as the semiconductor wafer and the frame member such as the ring frame are held in the dicing die bond film.

As for the adhesive agent layer as a die bond film of this dicing die bond film, the said 1st tensile storage elastic modulus in 25 degreeC is 5-120 Mpa as mentioned above. Such a structure is suitable for ensuring the adhesive force at normal temperature with respect to a frame member, such as a ring frame, in a dicing die bond film or its adhesive agent layer. Specifically, the constitution is suitable for appropriately attaching the frame member to the dicing die bond film or the adhesive agent layer at normal temperature. Moreover, this structure is suitable for realizing favorable adhesive force in the adhesive agent layer which is normal temperature before and behind an expansion process. The dicing die bond film is required not to generate adhesive residue on the frame member when peeled from the frame member attached thereto (prevention of residue upon peeling). From the viewpoint of preventing residue during peeling at room temperature in the adhesive layer, the first tensile storage modulus at 25 ° C. is preferably 6 MPa or more, and more preferably 7 MPa or more. From the standpoint of realizing high adhesion at room temperature to the frame member in the adhesive layer, the first tensile storage modulus at 25 ° C. is preferably 110 MPa or less, and more preferably 100 MPa or less.

Along with this, the adhesive agent layer of the present dicing die bond film has a second tensile storage modulus at -15 ° C of 3000 to 6000 MPa as described above. Such a configuration is suitable for cutting the adhesive layer in the expansion process carried out at -15 ° C and the low temperature in the vicinity thereof, and in order to secure the adhesive strength at low temperature to the frame member in the adhesive layer. It is suitable for you. From the standpoint of achieving good cutability at low temperatures in the adhesive layer, the second tensile storage modulus at -15 ° C is preferably 3200 MPa or more, and more preferably 3500 MPa or more. From the standpoint of realizing high adhesive strength at low temperature in the adhesive layer, the second tensile storage modulus at -15 ° C is preferably 5800 MPa or less, and more preferably 5500 MPa or less. The peeling of the adhesive agent layer or dicing die-bonding film from a frame member in the said expansion process tends to be suppressed so that the anti-frame member adhesive force in an expanded process implementation temperature is high.

As mentioned above, this dicing die bond film is suitable for realizing favorable adhesiveness with respect to frame members, such as a ring frame, while ensuring the cutting property in an expansion process in the adhesive agent layer.

In the present dicing die bond film, the dicing tape or the pressure-sensitive adhesive layer and the adhesive agent layer thereon in the film plane direction are added to the adhesive layer to the work bonding region to include the frame bonding region. It is possible to design with substantially the same dimensions. For example, in the in-plane direction of a dicing die bond film, it is possible to employ | adopt the design in which the outer peripheral edge part of an adhesive agent layer is a distance within 1000 micrometers from the base material of a dicing tape and each outer peripheral edge part of an adhesive layer. Do. Such a present dicing die bond film is one punching process for forming one dicing tape which has a laminated structure of a base material and an adhesive layer, and the process for forming one adhesive agent layer-a die bond film It is suitable to carry out collectively in processing such as processing.

In the manufacturing process of the conventional dicing die bond film Y mentioned above, the processing process (1st process process) for forming the dicing tape 60 of a predetermined | prescribed size and shape, and the die bond of a predetermined | prescribed size and shape A processing step (second processing step) for forming the film 70 is required as a separate step. In the 1st processing process, the laminated sheet body which has a laminated structure of the predetermined separator, the base material layer formed from the base material 61, and the adhesive layer located between them and formed by the adhesive layer 62, for example. About the process, the process which intrudes a process blade from the side of a base material layer to a separator is performed. Thereby, the dicing tape 60 which has a laminated structure of the adhesive layer 62 and the base material 61 on a separator is formed on a separator. In a 2nd processing process, about the laminated sheet body which has a laminated structure of a predetermined separator and the die bond film formed from the die bond film 70, for example, from a side of a die bond film to a separator, The process which intrudes into is performed. As a result, the die bond film 70 is formed on the separator. The dicing tape 60 and the die bond film 70 formed in such a separate process are then bonded while being aligned. In FIG. 17, the conventional dicing die bond film Y with the separator 83 which covers the surface of the die bond film 70 and the adhesive layer 62 is shown.

On the other hand, the dicing die bond film of this invention when the dicing tape, the adhesive layer, and the adhesive agent layer on it have substantially the same design dimension in a film plane direction has a laminated structure of a base material and an adhesive layer. It is suitable to collectively perform a process for forming one dicing tape having a structure and a process for forming one adhesive agent layer by a process such as one punching process. Such a dicing die bond film is suitable for realizing good adhesive force to the frame member while securing the cutability in the expand process in the adhesive layer, and in terms of reducing the number of manufacturing steps and suppressing the manufacturing cost. It is suitable for producing efficiently.

The shear adhesive force at -15 ° C with respect to the SUS plane in the adhesive layer of the present dicing die bond film is preferably 66 N / cm ² or more, more preferably 68 N / cm ² or more, and more preferably 70 N / cm ² or more. Shear adhesive force shall be the value measured by the shear adhesive force measuring method mentioned later regarding an Example. The said structure regarding shear adhesive force is suitable in ensuring the holding | maintenance of the frame member by this dicing die bond film at -15 degreeC and the low temperature of its vicinity.

The adhesive agent layer of this dicing die bond film, Preferably the weight average molecular weight 800000-2 million contains the polymer component of -10-3 degreeC of glass transition temperature. Such a configuration is suitable for achieving a balance between cutability at low temperatures in the adhesive agent layer, adhesion of the adhesive agent layer to the frame member, and prevention of residues during peeling of the adhesive agent layer. From the standpoint of securing cutability at low temperatures in the adhesive layer and the prevention of residues during peeling, the weight average molecular weight of the polymer is more preferably 900000 or more, and more preferably 1000000 or more. From the viewpoint of securing the frame member adhesive strength of the adhesive agent layer, the weight average molecular weight of the polymer is more preferably 1800000 or less, and still more preferably 1500000 or less. From the standpoint of securing the cleavage property at low temperature in the adhesive layer, the glass transition temperature of the polymer is more preferably -8 ° C or more, and still more preferably -6.5 ° C or more. From the standpoint of securing the frame member adhesion at low temperatures in the adhesive layer, the glass transition temperature of the polymer is more preferably 0 ° C. or less, and still more preferably −1.5 ° C. or less.

The polymer component in the adhesive layer preferably contains a structural unit derived from acrylonitrile. Such a structure is preferable in realizing high adhesiveness with respect to metal frame members, such as a SUS ring frame, in an adhesive agent layer because the nitrile group in the said unit of a polymer component of an adhesive agent layer is high polarity.

The adhesive agent layer of this dicing die bond film, Preferably it contains a silica filler in the ratio of 10-40 mass%. The structure whose silica filler content in an adhesive agent layer is 10 mass% or more is preferable in order to ensure the cutability in an expansion process in an adhesive agent layer, and also ensures cohesion force in an adhesive agent layer, and peels mentioned above. It is preferable in order to prevent sea residue. In securing the adhesive force at low temperature with respect to a frame member in an adhesive agent layer, the silica filler content of an adhesive agent layer becomes like this. Preferably it is 40 mass% or less, More preferably, it is 30 mass% or less, More preferably, 25 It is mass% or less.

The pressure sensitive adhesive layer of the dicing tape of the present dicing die bond film is preferably a radiation curable pressure sensitive adhesive layer. When the dicing tape pressure sensitive adhesive layer is a radiation curable pressure sensitive adhesive layer, in the present dicing die bond film, the pressure-sensitive adhesive layer and the adhesive agent in the T-type peeling test under conditions of 23 ° C and a peeling speed of 300 mm / min Peeling force between layers becomes like this. Preferably it is 0.5 N / 20 mm or more. Such a structure regarding peeling adhesive force is preferable in securing a large frame member adhesive force in an adhesive agent layer.

The thickness of the adhesive agent layer in this dicing die bond film becomes like this. Preferably it is 7-30 micrometers. The thickness of an adhesive agent layer is 7 micrometers or more is preferable in the case where the adhesive agent layer on which the frame member was stuck follows the fine unevenness | corrugation of the said frame member surface, and exhibits favorable frame member adhesiveness. The structure that the thickness of an adhesive agent layer is 30 micrometers or less is preferable in order to ensure the cutability in an expand process in an adhesive agent layer.

BRIEF DESCRIPTION OF THE DRAWINGS It is a cross-sectional schematic diagram of the dicing die bond film which concerns on one Embodiment of this invention.
FIG. 2 shows an example in the case where the dicing die bond film shown in FIG. 1 is accompanied by a separator.
FIG. 3 shows a part of steps in an example of a method for producing a dicing die bond film shown in FIG. 1.
4 shows a step following the step shown in FIG. 3.
FIG. 5 shows a part of steps in the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used.
FIG. 6 shows a process following the process shown in FIG. 5.
FIG. 7 shows a step following the step shown in FIG. 6.
FIG. 8 shows a step following the step shown in FIG. 7.
9 shows a step following the step shown in FIG. 8.
10 shows a step following the step shown in FIG. 9.
FIG. 11 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used.
FIG. 12 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used.
FIG. 13 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used.
FIG. 14 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used.
It is a cross-sectional schematic diagram of the conventional dicing die bond film.
FIG. 16: shows the use aspect of the dicing die bond film shown in FIG.
FIG. 17: shows one supply form of the dicing die bond film shown in FIG. 15. FIG.

BRIEF DESCRIPTION OF THE DRAWINGS It is a cross-sectional schematic diagram of the dicing die bond film X which concerns on one Embodiment of this invention. The dicing die bond film X has a laminated structure including the dicing tape 10 and the adhesive agent layer 20. The dicing tape 10 has a laminated structure including the base material 11 and the pressure-sensitive adhesive layer 12. The adhesive layer 12 has the adhesive surface 12a in the adhesive agent layer 20 side. The adhesive agent layer 20 includes the workpiece | work adhesion area | region and the frame adhesion | attachment area | region, and is contact | adhered to the adhesive layer 12 of the dicing tape 10 to the adhesive surface 12a so that peeling is possible. In the manufacture of a semiconductor device, the dicing die bond film X is a thing which can be used for the process of obtaining the semiconductor chip provided with the die bond film, for example in the later expansion process. In addition, the dicing die bond film X has a disk shape of the size corresponding to the semiconductor wafer which is a process target in the manufacturing process of a semiconductor device, The diameter is the range of 345-380 mm (for 12-inch wafers, for example). Mold), in the range of 245 to 280 mm (for 8 inch wafer), in the range of 195 to 230 mm (for 6 inch wafer), or in the range of 495 to 530 mm (for 18 inch wafer).

The base material 11 of the dicing tape 10 is an element which functions as a support body in the dicing tape 10-the dicing die bond film X. The base material 11 is a plastic base material, for example, A plastic film can be used suitably as the said plastic base material. As the constituent material of the plastic substrate, for example, polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic Polyamide, polyphenyl sulfide, aramid, fluororesin, cellulose resin and silicone resin. As the polyolefin, for example, low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate Copolymer (EVA), ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer and ethylene-hexene copolymer. Examples of the polyester include polyethylene terephthalate (PET), polyethylene naphthalate and polybutylene terephthalate (PBT). The base material 11 may consist of one type of material, and may consist of two or more types of materials. The base material 11 may have a single layer structure or may have a multilayer structure. In addition, when the base material 11 consists of a plastic film, a non-stretched film may be sufficient, a uniaxial stretched film may be sufficient as it, and a biaxially stretched film may be sufficient as it. When the adhesive layer 12 on the base material 11 has ultraviolet curability as mentioned later, it is preferable that the base material 11 has ultraviolet permeability.

In the process of using the dicing die bond film X, when the dicing tapes 10 to 11 are shrunk by, for example, partial heating, the base 11 preferably has heat shrinkability. It is preferable that the base material 11 contains the ethylene-vinyl acetate copolymer as a main component from a viewpoint of ensuring the favorable heat shrinkability in the base material 11. The main component of the base material 11 is a component which occupies the largest mass ratio among the base material components. In addition, when the base material 11 consists of a plastic film, in order to implement isotropic heat shrinkability with respect to the dicing tape 10-the base material 11, it is preferable that the base material 11 is a biaxially stretched film. As for the dicing tape 10-the base material 11, the heat shrink rate in the heat processing test performed on the conditions of 100 degreeC of heating temperature, and 60 second of heat processing time is 2 to 30%, for example.

The surface on the pressure-sensitive adhesive layer 12 side of the base material 11 may be subjected to physical treatment, chemical treatment, or undercoating treatment for enhancing the adhesion with the pressure-sensitive adhesive layer 12. Examples of the physical treatment include corona treatment, plasma treatment, sand mat treatment, ozone exposure treatment, flame exposure treatment, high pressure electric shock exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment. It is preferable that the said process for improving adhesiveness is performed on the whole surface of the adhesive layer 12 side in the base material 11.

The thickness of the substrate 11 is preferably 40 µm or more, more preferably from the viewpoint of securing the strength for the substrate 11 to function as a support in the dicing tape 10 to the dicing die bond film X. Preferably it is 50 micrometers or more, More preferably, it is 55 micrometers or more, More preferably, it is 60 micrometers or more. In addition, from the viewpoint of achieving proper flexibility in the dicing tape 10 to the dicing die bond film X, the thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less, and more. Preferably it is 150 micrometers or less.

The adhesive layer 12 of the dicing tape 10 contains an adhesive. The pressure-sensitive adhesive may be a pressure-sensitive adhesive (adhesive force-reducing type pressure-sensitive adhesive) capable of intentionally reducing the adhesive force by an external action such as radiation irradiation or heating, and an adhesive (adhesive force with little or no reduced adhesive force depending on the action from the outside). Non-low pressure-sensitive adhesive). As for the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, whether or not to use an adhesive force-reducing adhesive or a non-adhesive pressure-sensitive adhesive, the dicing die bond film X can be used for dicing, for example, the method and conditions for the separation of the semiconductor chip to be separated. According to the usage aspect of the die bond film X, it can select suitably.

In the case of using the pressure-sensitive adhesive as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, in the process of using the dicing die bond film X, the pressure-sensitive adhesive layer 12 exhibits a relatively high adhesive force and a state of relatively low adhesive force. Can be used separately. For example, when the dicing die bond film X is used in the expansion process described later, the pressure-sensitive adhesive layer 12 may be prevented from being prevented from lifting or peeling off the adhesive layer 20 from the pressure-sensitive adhesive layer 12. While using a high adhesive force state, and after that, in the pick-up process mentioned later for picking up the semiconductor chip provided with the adhesive agent layer from the dicing tape 10 of dicing die bond film X, it is an adhesive agent from the adhesive layer 12 In order to make it easy to pick up the semiconductor chip provided with a layer, it is possible to use the low adhesive force state of the adhesive layer 12. FIG.

As such an adhesive force reducing adhesive, a pressure-sensitive adhesive (radiation curable pressure sensitive adhesive), a heat-expandable pressure sensitive adhesive, etc. which have radiation curability are mentioned, for example. In the adhesive layer 12 of this embodiment, one type of adhesive force reducing adhesive may be used, and two or more types of adhesive force reducing adhesive may be used. In addition, the whole adhesive layer 12 may be formed from the adhesive force reducing adhesive, and a part of adhesive layer 12 may be formed from the adhesive force reducing adhesive. For example, when the adhesive layer 12 has a single layer structure, the whole adhesive layer 12 may be formed from the adhesive force reducing adhesive, and the predetermined site | part in the adhesive layer 12 is formed from the adhesive force reducing adhesive. The other portion may be formed from an adhesive force non-low-pressure adhesive. In addition, when the adhesive layer 12 has a laminated structure, all the layers which comprise a laminated structure may be formed from an adhesive force reducing adhesive, and some layers in a laminated structure may be formed from an adhesive force reducing adhesive.

As a radiation curable adhesive in the adhesive layer 12, the adhesive of the type hardened | cured by irradiation of an electron beam, an ultraviolet-ray, (alpha) ray, (beta) ray, (gamma) ray, or X-rays can be used, for example, and it hardens by ultraviolet irradiation Type adhesive (ultraviolet curable adhesive) can be used especially suitably.

As a radiation curable adhesive in the adhesive layer 12, it contains a base polymer, such as an acryl-type adhesive acrylic polymer, and the radiation polymerizable monomer component and oligomer component which have functional groups, such as a radiation polymerizable carbon-carbon double bond, for example. Additive radiation curable adhesives are mentioned.

The acrylic polymer preferably contains, as the mass ratio, the most monomer units derived from acrylic acid esters and / or methacrylic acid esters. Hereinafter, "acryl" and / or "methacryl" are represented by "(meth) acryl", and "acrylate" and / or "methacrylate" are represented by "(meth) acrylate".

As (meth) acrylic acid ester for forming the monomeric unit of an acryl-type polymer, hydrocarbon group containing (meth) acrylic acid ester, such as (meth) acrylic-acid alkylester, (meth) acrylic-acid cycloalkyl ester, and (meth) acrylic-acid aryl ester, Can be mentioned. As the (meth) acrylic acid alkyl ester, for example, methyl ester of (meth) acrylic acid, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, iso Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl Esters, octadecyl esters and eicosyl esters. As (meth) acrylic-acid cycloalkyl ester, the cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid are mentioned, for example. As (meth) acrylic-acid aryl ester, (meth) acrylic-acid phenyl and (meth) acrylic-acid benzyl are mentioned, for example. As a monomer component for forming the monomer unit of an acryl-type polymer, one type of (meth) acrylic acid ester may be used and two or more types of (meth) acrylic acid ester may be used. As (meth) acrylic acid ester for forming the monomeric unit of an acryl-type polymer, the (meth) acrylic-acid alkylester whose carbon number of an alkyl group is ten or more is preferable, and dodecyl acrylate is more preferable. Moreover, in expressing basic characteristics, such as adhesiveness by (meth) acrylic acid ester, in the adhesive layer 12 suitably, the ratio of the (meth) acrylic acid ester in all the monomer components for forming an acrylic polymer is preferable. Preferably it is 40 mass% or more, More preferably, it is 60 mass% or more.

In order to modify the cohesion force, heat resistance, etc., an acryl-type polymer may contain the monomer unit derived from the other monomer copolymerizable with (meth) acrylic acid ester. As such another monomer, functional group containing monomers, such as a carboxyl group containing monomer, an acid anhydride monomer, a hydroxy group containing monomer, a glycidyl group containing monomer, a sulfonic acid group containing monomer, a phosphoric acid group containing monomer, acrylamide, and acrylonitrile, are mentioned, for example. . As a carboxyl group-containing monomer, acrylic acid, methacrylic acid, 2-carboxyethyl (meth) acrylic acid, 5-carboxypentyl (meth) acrylic acid, itaconic acid, maleic acid, fumaric acid, and crotonic acid are mentioned, for example. As an acid anhydride monomer, maleic anhydride and itaconic anhydride are mentioned, for example. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, and (meth 8) hydroxy octyl acrylic acid, 10-hydroxydecyl (meth) acrylic acid, (12) -hydroxydodecyl (meth) acrylic acid, and (meth) acrylic acid (4-hydroxymethylcyclohexyl) methyl. As a glycidyl group containing monomer, (meth) acrylic-acid glycidyl and (meth) acrylic-acid methylglycidyl are mentioned, for example. Examples of the sulfonic acid group-containing monomers include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamide propanesulfonic acid, and sulfopropyl (meth) acrylate. As a phosphoric acid group containing monomer, 2-hydroxyethyl acryloyl phosphate is mentioned, for example. As said other copolymerizable monomer for acrylic polymers, one type of monomer may be used and two or more types of monomers may be used.

In order to form a crosslinked structure in the polymer skeleton, an acryl-type polymer may contain the monomer unit derived from the polyfunctional monomer copolymerizable with monomer components, such as (meth) acrylic acid ester. As such a polyfunctional monomer, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentylglycol di (meth) acrylic Elate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, polyglycidyl (meth) Acrylate, polyester (meth) acrylate, and urethane (meth) acrylate are mentioned. As a monomer component for an acrylic polymer, one type of polyfunctional monomer may be used and two or more types of polyfunctional monomers may be used. In the ratio of the polyfunctional monomer in all monomer components for forming an acrylic polymer, in order to express basic characteristics, such as adhesiveness by (meth) acrylic acid ester, in the adhesive layer 12 suitably, Preferably it is 40 mass % Or less, Preferably it is 30 mass% or less.

An acrylic polymer can be obtained by superposing | polymerizing the raw material monomer for forming it. As a polymerization method, solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization are mentioned, for example. From the viewpoint of the high cleanliness in the semiconductor device manufacturing method in which the dicing tape 10-the dicing die bond film X are used, the adhesive layer 12 in the dicing tape 10-the dicing die bond film X The lower the molecular weight material in), the smaller the amount, and the weight average molecular weight of the acrylic polymer is preferably 100000 or more, and more preferably 200000 to 3000000.

In order to raise the weight average molecular weight of base polymers, such as an acrylic polymer, for example, the adhesive layer 12-the adhesive for making it may contain an external crosslinking agent. Examples of the external crosslinking agent for forming a crosslinked structure by reacting with a base polymer such as an acrylic polymer include a polyisocyanate compound, an epoxy compound, a polyol compound (such as a polyphenol compound), an aziridine compound, and a melamine crosslinking agent. Content of the external crosslinking agent in the adhesive layer 12-the adhesive for achieving it is preferably 6 mass parts or less, More preferably, it is 0.1-5 mass parts with respect to 100 mass parts of base polymers.

Examples of the radiation polymerizable monomer component for forming a radiation curable pressure sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol tetra (meth). ) Acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1, 4- butanediol di (meth) acrylate. As said radiation polymerizable oligomer component for forming a radiation curable adhesive, various oligomers, such as a urethane type, a polyether type, polyester type, polycarbonate type, polybutadiene type, are mentioned, for example, The molecular weight of about 100-30000 It is suitable. The total content of the radiation polymerizable monomer component and oligomer component in the radiation curable pressure sensitive adhesive is determined in a range in which the adhesive force of the pressure sensitive adhesive layer 12 formed can be appropriately reduced by radiation irradiation, and 100 masses of base polymers such as acrylic polymers are used. With respect to a part, it is 5-500 mass parts, for example, Preferably it is 40-150 mass parts. In addition, as an additive type radiation curable adhesive, what was disclosed by Unexamined-Japanese-Patent No. 60-196956 may be used, for example.

As a radiation curable adhesive in the adhesive layer 12, the internal radiation curable containing the base polymer which has functional groups, such as a radiation polymerizable carbon-carbon double bond, in a polymer side chain and a polymer main chain terminal in a polymer main chain, for example. A tackifier can also be mentioned. Such an intrinsic radiation curable pressure sensitive adhesive is suitable for suppressing an unintended change in adhesion characteristics due to movement of low molecular weight components in the pressure sensitive adhesive layer 12 to be formed.

As a base polymer contained in an internal radiation curable adhesive, what makes an acryl-type polymer a basic skeleton is preferable. As an acryl-type polymer which forms such a basic frame | skeleton, the above-mentioned thing can be employ | adopted as an acryl-type polymer in an addition type radiation curable adhesive. As a method of introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer, and then, between the first functional groups. A compound having a predetermined functional group (second functional group) and a radiation polymerizable carbon-carbon double bond capable of generating a reaction and condensing with the acrylic polymer while maintaining the radiation polymerizability of the carbon-carbon double bond or The method of making addition reaction is mentioned.

Examples of the combination of the first functional group and the second functional group include a carboxyl group and an epoxy group, an epoxy group, a carboxyl group, a carboxyl group and an aziridyl group, an aziridyl group and a carboxyl group, a hydroxyl group and an isocyanate group, an isocyanate group and a hydroxyl group. Among these combinations, a combination of a hydroxy group and an isocyanate group or a combination of an isocyanate group and a hydroxyl group is suitable from the viewpoint of ease of reaction tracing. In addition, from the viewpoint of ease of production or acquisition of an acrylic polymer, the first functional group on the acrylic polymer side is a hydroxyl group, and the second functional group isocyanate from the viewpoint of the technical difficulty of producing a polymer having a highly reactive isocyanate group. The case of group is more suitable. In this case, as an isocyanate compound which combines a radiation polymerizable carbon-carbon double bond and an isocyanate group which is a 2nd functional group, ie, a radiation polymerizable unsaturated functional group containing isocyanate compound, for example, methacryloyl isocyanate and 2-methacryloyloxy Ethyl isocyanate (MOI) and m-isopropenyl-α, α-dimethylbenzyl isocyanate.

The radiation curable adhesive in the adhesive layer 12 preferably contains a photoinitiator. As a photoinitiator, For example, (alpha)-ketol type compound, acetophenone type compound, a benzoin ether type compound, a ketal type compound, an aromatic sulfonyl chloride type compound, an optically active oxime type compound, a benzophenone type compound, a thioxanthone type Compound, camphorquinone, halogenated ketone, acylphosphine oxide and acyl phosphonate. As (alpha)-ketol type compound, 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, (alpha)-hydroxy- (alpha), (alpha) '-dimethylacetophenone, 2-methyl, for example. 2-hydroxy propiophenone and 1-hydroxycyclohexylphenyl ketone are mentioned. As an acetophenone type compound, for example, methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethan-1-one, 2,2- diethoxyacetophenone, and 2-methyl-1- [4 -(Methylthio) -phenyl] -2-morpholinopropane-1 is mentioned. As a benzoin ether type compound, benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether are mentioned, for example. As a ketal type compound, benzyl dimethyl ketal is mentioned, for example. As an aromatic sulfonyl chloride type compound, 2-naphthalene sulfonyl chloride is mentioned, for example. As an optically active oxime type compound, 1-phenyl- 1, 2- propanedione- 2- (O-ethoxycarbonyl) oxime is mentioned, for example. As a benzophenone type compound, benzophenone, benzoyl benzoic acid, and 3,3'- dimethyl- 4-methoxy benzophenone are mentioned, for example. As a thioxanthone type compound, for example, thioxanthone, 2-chloro thioxanthone, 2-methyl thioxanthone, 2, 4- dimethyl thioxanthone, isopropyl thioxanthone, and 2, 4- dichlorothioke Santone, 2, 4- diethyl thioxanthone, and 2, 4- diisopropyl thioxanthone are mentioned. Content of the photoinitiator in the radiation curable adhesive in the adhesive layer 12 is 0.05-20 mass parts with respect to 100 mass parts of base polymers, such as an acryl-type polymer, for example.

The said heat-foaming type adhesive in the adhesive layer 12 is an adhesive containing the component which foams and expands by heating. As a component which foams and expands by heating, a foaming agent and thermally expansible microsphere are mentioned, for example.

Examples of the foaming agent for the heat-foaming pressure-sensitive adhesive include various inorganic foaming agents and organic foaming agents. Examples of the inorganic blowing agent include ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium borohydride and azide. As an organic type foaming agent, For example, hydrofluoric alkanes, such as trichloromonofluoromethane and dichloromonofluoromethane, azo-type compounds, such as azobisisobutyronitrile, azodicarbonamide, and barium azodicarboxylate, para Hydrazine compounds, such as toluene sulfonyl hydrazide, diphenyl sulfone-3,3'- disulfonyl hydrazide, 4,4'- oxybis (benzenesulfonyl hydrazide), and allyl bis (sulfonyl hydrazide), p Semicarbazide-based compounds, such as toluylene sulfonyl semicarbazide and 4,4'-oxybis (benzenesulfonyl semicarbazide), 5-morphoryl-1,2,3,4- tiatiazole Triazole type compounds, such as these, and N-nitroso type compounds, such as N, N'- dinitrosopentamethylenetetramine and N, N'-dimethyl-N, N'- dinitroso terephthalamide, are mentioned.

Examples of the heat-expandable microspheres for a heat-foamable pressure-sensitive adhesive include microspheres having a structure in which a substance which is easily gasified and expanded by heating is enclosed in an outer shell. As a substance which gasifies easily and expands by heating, isobutane, a propane, and a pentane are mentioned, for example. The thermally expandable microspheres can be produced by encapsulating a substance which is easily gasified and expanded by heating into a shell-forming substance by a coacervation method, an interfacial polymerization method or the like. As the envelope forming material, a material which exhibits thermal meltability or a material which can be ruptured by the thermal expansion action of the encapsulating material can be used. As such a substance, vinylidene chloride- acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone are mentioned, for example.

As said adhesive force non-reduced adhesive in the adhesive layer 12, a pressure-sensitive adhesive is mentioned, for example. As this pressure-sensitive adhesive, for example, an acrylic pressure-sensitive adhesive or a rubber pressure-sensitive adhesive having an acrylic polymer as a base polymer can be used. When the pressure-sensitive adhesive layer 12 contains an acrylic pressure-sensitive adhesive as a pressure-sensitive adhesive, the base polymerized acrylic polymer of the acrylic pressure-sensitive adhesive preferably has a monomer unit derived from the (meth) acrylic acid ester as the most monomer units in mass ratio. Include. As such an acryl-type polymer, the acryl-type polymer mentioned above about a radiation curable adhesive is mentioned, for example.

As a pressure sensitive adhesive in the adhesive layer 12, you may use the adhesive of the form which hardened | cured the radiation curable adhesive mentioned above about the adhesive force reducing adhesive. Even if the adhesive force of such hardened radiation curing type adhesive agent is reduced by radiation irradiation, it can exhibit adhesiveness resulting from the said polymer component depending on content of a polymer component, and adhere | attaches an adherend in a predetermined use aspect. It is possible to exert the adhesive force available for holding.

In the adhesive layer 12 of this embodiment, one type of adhesive force non-reduction type | mold adhesive may be used and two or more types of adhesive force non-reduction type | mold adhesives may be used. Moreover, the whole adhesive layer 12 may be formed from the adhesive force non-reducing adhesive, and a part of adhesive layer 12 may be formed from the adhesive force non-reducing adhesive. For example, when the adhesive layer 12 has a single | mono layer structure, the whole adhesive layer 12 may be formed from the adhesive force non-reduced adhesive, and the predetermined site | part in the adhesive layer 12 may be the adhesive force non-reduced adhesive. And other sites may be formed from an adhesive force reducing adhesive. In addition, when the adhesive layer 12 has a laminated structure, all the layers which comprise a laminated structure may be formed from the adhesive force non-reducing adhesive, and some layers in a laminated structure may be formed from the adhesive force non-reducing adhesive.

In the adhesive layer 12-the adhesive for achieving it, you may add to each component mentioned above, and may contain a crosslinking promoter, a tackifier, an antioxidant, a coloring agent, etc. Examples of the colorant include pigments and dyes. In addition, the compound may be a compound which receives radiation and color it. As such a compound, a leuco dye is mentioned, for example.

The thickness of the adhesive layer 12 becomes like this. Preferably it is 1-50 micrometers, More preferably, it is 2-30 micrometers, More preferably, it is 5-25 micrometers. Such a configuration balances the adhesive force to the adhesive layer 20 before and after the radiation curing of the pressure-sensitive adhesive layer 12 when the pressure-sensitive adhesive layer 12 contains a radiation curable pressure-sensitive adhesive. Is suitable.

The adhesive agent layer 20 of the dicing die bond film X combines the function as an adhesive agent which shows the thermosetting property for die bonding, and the adhesion function for holding a frame member, such as a workpiece | work, such as a semiconductor wafer, and a ring frame mentioned later. In this embodiment, the adhesive agent for forming the adhesive agent layer 20 may have a composition containing a thermosetting resin and the thermoplastic resin as a binder component, for example, and the thermosetting functional group which can generate | occur | produce a bond by reacting with a hardening | curing agent You may have a composition containing the accompanying thermoplastic resin. When the adhesive agent for forming the adhesive agent layer 20 has a composition containing a thermoplastic resin with a thermosetting functional group, the adhesive agent does not need to further include a thermosetting resin (such as an epoxy resin). Such an adhesive agent layer 20 may have a single layer structure, and may have a multilayered structure.

When the adhesive agent layer 20 contains a thermosetting resin together with a thermoplastic resin, as said thermosetting resin, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting poly Mid resin can be mentioned. As the thermosetting resin in the adhesive agent layer 20, one type of resin may be used and two or more types of resin may be used. Epoxy resin is preferable as the thermosetting resin contained in the adhesive agent layer 20 because there exists a tendency for content of the ionic impurity etc. which may be the cause of corrosion of the semiconductor chip to be die-bonded to be small. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

As the epoxy resin, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolak type, Orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type and glycidylamine type epoxy resin. Novolak-type epoxy resins, biphenyl-type epoxy resins, trishydroxyphenylmethane-type epoxy resins, and tetraphenylolethane type epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance. It is preferable as an epoxy resin contained in the layer 20.

As a phenol resin which can act as a hardening | curing agent of an epoxy resin, polyoxystyrene, such as a novolak-type phenol resin, a resol-type phenol resin, and polyparaoxystyrene, is mentioned, for example. As a novolak-type phenol resin, a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, tert- butylphenol novolak resin, and a nonyl phenol novolak resin are mentioned, for example. As a phenol resin which can act as a hardening | curing agent of an epoxy resin, one type of phenol resin may be used and two or more types of phenol resins may be used. Since phenol novolak resin and phenol aralkyl resin tend to improve the connection reliability of the said adhesive agent, when used as a hardening | curing agent of the epoxy resin as an adhesive for die bonding, the epoxy resin contained in the adhesive agent layer 20 It is preferable as a curing agent of.

From the viewpoint of fully advancing the curing reaction between the epoxy resin and the phenol resin in the adhesive agent layer 20, the phenol resin is preferably a hydroxyl group in the phenol resin per 1 equivalent of the epoxy group in the epoxy resin component. It is contained in the adhesive agent layer 20 in the quantity which becomes equivalent, More preferably, it is 0.8-1.2 equivalent.

The content ratio of the thermosetting resin in the adhesive layer 20 is preferably 5 to 60 mass%, more preferably from the viewpoint of appropriately expressing the function as the thermosetting adhesive in the adhesive layer 20. 10-50 mass%.

Examples of the thermoplastic resin included in the adhesive layer 20 include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, and polybutadiene. Resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and Fluorine resin can be mentioned. As a thermoplastic resin in the adhesive agent layer 20, 1 type of resin may be used and 2 or more types of resin may be used. As a thermoplastic resin contained in the adhesive agent layer 20, since an ionic impurity is small and heat resistance is high, since acrylic resin is easy to ensure the bonding reliability by the adhesive agent layer 20, acrylic resin is preferable.

The adhesive agent layer 20 preferably contains a polymer component having a weight average molecular weight of 800000 to 2000000 and a polymer component having a glass transition temperature of -10 to 3 ° C as a main component of the thermoplastic resin. The main component of the thermoplastic resin is a resin component that occupies the largest mass ratio among the thermoplastic resin components. Such a structure aims at balancing the cleavage at low temperature in the adhesive agent layer 20, the adhesive force of the adhesive agent layer 20 with respect to a frame member, and the residue prevention at the time of peeling the adhesive agent layer 20. Suitable for use. From the standpoint of securing the cutability at low temperatures in the adhesive agent layer 20 and from the viewpoint of preventing residue during peeling, the weight average molecular weight of the polymer is more preferably 900000 or more, and more preferably 1000000 or more. From the standpoint of securing the frame member adhesive strength of the adhesive agent layer 20, the weight average molecular weight of the polymer is more preferably 1800000 or less, and still more preferably 1500000 or less. From the standpoint of securing the cleavage property at low temperature in the adhesive layer 20, the glass transition temperature of the polymer is more preferably -8 ° C or more, and more preferably -6.5 ° C or more. From the standpoint of securing the frame member adhesive force at low temperature in the adhesive layer 20, the glass transition temperature of the polymer is more preferably 0 ° C or less, and more preferably -1.5 ° C or less.

About the glass transition temperature of a polymer, the glass transition temperature (theoretical value) calculated | required based on the following Fox formula can be used. The formula of Fox is a relationship between the glass transition temperature Tg of a polymer and the glass transition temperature Tgi of the homopolymer for each constituent monomer in the polymer. In the following Fox formula, Tg represents the glass transition temperature (° C.) of the polymer, Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (° C.) of the homopolymer of the monomer i. Indicates. Literature values can be used for the glass transition temperature of the homopolymer. For example, "Introductory Synthetic Resin for High Molecular weight 7 Paint" (Kitaoka Kyojo, Polymer Publications, 1995) and the "Acrylic Ester Catalog (1997 Edition)" (Mitsubishi Rayon Co., Ltd.) Glass transition temperatures are illustrated. In addition, the homopolymer glass transition temperature of a monomer can also be calculated | required by the method specifically described in Unexamined-Japanese-Patent No. 2007-51271.

Fox's equation 1 / (273 + Tg) = Σ [Wi / (273 + Tgi)]

The acrylic resin contained in the adhesive agent layer 20 as a thermoplastic resin, Preferably contains the monomer unit derived from the (meth) acrylic acid ester as the main monomer unit with the most mass ratio. As such (meth) acrylic acid ester, the same (meth) acrylic acid ester can be used about the acrylic polymer which is one component of the radiation curable adhesive for pressure-sensitive adhesive layer 12 formation, for example. The acrylic resin contained in the adhesive agent layer 20 as a thermoplastic resin may contain the monomer unit derived from the other monomer copolymerizable with (meth) acrylic acid ester. Examples of such other monomer components include functional group-containing monomers such as carboxyl group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamides, and acrylonitrile. A polyfunctional monomer is mentioned, Specifically, the thing similar to what was mentioned above can be used as another monomer copolymerizable with (meth) acrylic acid ester about the acrylic polymer which is one component of the radiation-curable adhesive for formation of the adhesive layer 12. . From the standpoint of achieving high cohesion in the adhesive layer 20, the acrylic resin contained in the adhesive layer 20 is preferably a (meth) acrylic acid ester, a carboxyl group-containing monomer, a nitrogen atom-containing monomer, And a copolymer of a polyfunctional monomer. As said (meth) acrylic acid ester, the (meth) acrylic-acid alkylester whose carbon number of an alkyl group is four or less is preferable. As the polyfunctional monomer, a polyglycidyl polyfunctional monomer is preferable. The acrylic resin contained in the adhesive layer 20 is more preferably a copolymer of ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile, and polyglycidyl (meth) acrylate.

Since the nitrile group in the acrylonitrile-derived structural unit of the said polymer component in the adhesive agent layer 20 in the structure which a polymer component, such as an acryl-type polymer in the adhesive agent layer 20 contains an acrylonitrile, is highly polar, In the adhesive agent layer 20, it is preferable in realizing high adhesiveness with respect to metal frame members, such as a SUS ring frame.

When the adhesive agent layer 20 contains the thermoplastic resin accompanying a thermosetting functional group, as said thermoplastic resin, a thermosetting functional group containing acrylic resin can be used, for example. The acrylic resin for forming this thermosetting functional group containing acrylic resin, Preferably the monomer unit derived from the (meth) acrylic acid ester contains as a main monomer unit with the most mass ratio. As such (meth) acrylic acid ester, the (meth) acrylic acid ester similar to what was mentioned above about the acrylic polymer which is one component of the radiation curable adhesive for pressure-sensitive adhesive layer 12 formation can be used, for example. On the other hand, as a thermosetting functional group for forming a thermosetting functional group containing acrylic resin, glycidyl group, a carboxy group, a hydroxyl group, and an isocyanate group are mentioned, for example. Among these, glycidyl group and carboxyl group can be used suitably. That is, as a thermosetting functional group containing acrylic resin, glycidyl group containing acrylic resin and carboxyl group containing acrylic resin can be used suitably. In addition, as a hardening | curing agent of a thermosetting functional group containing acrylic resin, what was mentioned above can be used as an external crosslinking agent which may become one component of the radiation curable adhesive for pressure-sensitive adhesive layer 12 formation, for example. When the thermosetting functional group in a thermosetting functional group containing acrylic resin is a glycidyl group, a polyphenol type compound can be used suitably as a hardening | curing agent, For example, the said various phenol resin can be used.

In order to realize a certain degree of crosslinking with respect to the adhesive agent layer 20 before hardening for die bonding, it bonds by reacting with the functional group of the molecular chain terminal of resin mentioned above contained in the adhesive agent layer 20, etc., for example. It is preferable to mix | blend the polyfunctional compound which can be made into the resin composition for adhesive agent layer formation as a crosslinking agent. Such a configuration is suitable for improving the adhesive properties under a high temperature with respect to the adhesive agent layer 20 and for improving the heat resistance. As such a crosslinking agent, a polyisocyanate compound is mentioned, for example. As a polyisocyanate compound, tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5- naphthalene diisocyanate, and the adduct of polyhydric alcohol and diisocyanate are mentioned, for example. Content of the crosslinking agent in the resin composition for adhesive agent layer formation is preferable from a viewpoint of the cohesion force improvement of the adhesive agent layer 20 formed with respect to 100 mass parts of resin which has the said functional group which can react and couple | bond with the said crosslinking agent. Preferably it is 0.05 mass part or more, Preferably it is 7 mass parts or less from a viewpoint of the adhesive force improvement of the adhesive agent layer 20 formed. In addition, as a crosslinking agent in the adhesive agent layer 20, you may use together other polyfunctional compounds, such as an epoxy resin, with a polyisocyanate compound.

The content ratio of the high molecular weight component as described above in the adhesive agent layer 20 becomes like this. Preferably it is 50-100 mass%, More preferably, it is 50-80 mass%. The high molecular weight component is a component having a weight average molecular weight of 10000 or more. Such a structure is preferable in achieving both the adhesiveness in the adhesive agent layer 20 with respect to a frame member, such as a ring frame mentioned later, at room temperature and its vicinity, and prevention of residue at the time of peeling. In addition, the adhesive agent layer 20 may also contain liquid resin which is liquid at 23 degreeC. When the adhesive agent layer 20 contains such a liquid resin, the content rate of the said liquid resin in the adhesive agent layer 20 becomes like this. Preferably it is 1-10 mass%, More preferably, it is 1-5 mass%. to be. Such a structure is preferable in achieving both the adhesiveness in the adhesive agent layer 20 with respect to a frame member, such as a ring frame mentioned later, at room temperature and its vicinity, and prevention of residue at the time of peeling.

The adhesive agent layer 20 may contain the filler. By mix | blending a filler with respect to the adhesive agent layer 20, the elasticity modulus, such as the tensile storage elastic modulus of the adhesive agent layer 20, and physical properties, such as electroconductivity and thermal conductivity, can be adjusted. As a filler, an inorganic filler and an organic filler are mentioned, In particular, an inorganic filler is preferable. Examples of the inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. Metal, such as aluminum, gold, silver, copper, nickel, an alloy, amorphous carbon black, and graphite. The filler may have various shapes, such as a spherical shape, a needle shape, and a flake shape. One type of filler may be mix | blended with the adhesive agent layer 20, and two or more types of filler may be mix | blended. In securing the splitting property in the expand process mentioned later in the adhesive layer 20, the silica filler content of the adhesive layer 20 becomes like this. Preferably it is 10 mass% or more. In securing the cohesion force in the adhesive agent layer 20 and preventing the residue at the time of peeling from a frame member, the silica filler content ratio of the adhesive agent layer 20 becomes like this. Preferably it is 40 mass% or less, More preferably, Is 30 mass% or less, More preferably, it is 25 mass% or less.

The average particle diameter of the said filler in the case where the adhesive agent layer 20 contains a filler becomes like this. Preferably it is 0.005-10 micrometers, More preferably, it is 0.005-1 micrometer. The structure whose average particle diameter of the said filler is 0.005 micrometers or more is suitable in realizing the high wettability and adhesiveness with respect to adherends, such as a semiconductor wafer, in the adhesive agent layer 20. FIG. The structure in which the average particle diameter of the said filler is 10 micrometers or less is suitable at the time of ensuring the heat resistance, while enjoying the sufficient filler addition effect in the adhesive agent layer 20. The average particle diameter of a filler can be calculated | required using a light-type particle size distribution meter (brand name "LA-910", the product made by Horiba Seisakusho Co., Ltd.).

The adhesive agent layer 20 may contain one type or two or more types of other components as needed. As said other component, a flame retardant, a silane coupling agent, and an ion trap agent are mentioned, for example. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resins. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. . As an ion trap agent, for example, hydrotalcites, bismuth hydroxide, hydrous antimony oxide (for example, "IXE-300" by Toagosei Co., Ltd.), zirconium phosphate of a specific structure (for example, Toagosei Co., Ltd.) "IXE-100" made by Kaisha, magnesium silicate (for example "Kyowad 600" made by Kyogawa Kagaku Kogyo Co., Ltd.) and aluminum silicate (for example, "Kyogawa Kagaku Kogyo Co., Ltd." Kyowa 700 ''). The compound which can form a complex between metal ions can also be used as an ion trap agent. As such a compound, a triazole type compound, a tetrazole type compound, and a bipyridyl type compound are mentioned, for example. Among these, a triazole type compound is preferable from the viewpoint of the stability of the complex formed between metal ions. As such a triazole type compound, 1,2,3- benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxy benzotriazole, 2- (2- Hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-t- Butyl-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amyl phenyl) benzotriazole, 2- (2-hydroxy-5-t-octyl Phenyl) benzotriazole, 6- (2-benzotriazolyl) -4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1- (2,3-di Hydroxypropyl) benzotriazole, 1- (1,2-dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t-pentyl-6- {(H-Benzotriazol-1-yl) methyl} phenol, 2- (2-hydroxy-5-t-butylphenyl) -2H-benzotriazole, octyl-3- [3-t-butyl-4 -Hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2-ethylhexyl-3- [3- t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2- (2H-benzotriazol-2-yl) -6- (1 -Methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazol-2-yl) -4-t-butyl phenol, 2- ( 2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) -benzotriazole, 2- (3-t-butyl-2-hydroxy-5-methylphenyl ) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl ) -5-chloro-benzotriazole, 2- [2-hydroxy-3,5-di (1,1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazol-2-yl] -4- (1,1,3,3-tetramethylbutyl) phenol], 2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl ) Phenyl] -2H-benzotriazole and methyl-3- [3- (2H-benzotriazol-2-yl) -5-t-butyl-4-hydroxyphenyl] propionate. Moreover, a quinol compound and hydroxy anthraqui Predetermined hydroxyl group containing compounds, such as a non-compound and a polyphenol compound, can also be used as an ion trap agent. As such a hydroxyl-containing compound, a 1, 2- benzene diol, alizarin, anthrapine, tannin, a gallic acid, methyl gallate, and pyrogallol are mentioned, for example.

The thickness of the adhesive agent layer 20 exists in the range of 1-200 micrometers, for example, Preferably it is 7-30 micrometers. The thickness of the adhesive agent layer 20 is 7 micrometers or more is preferable in the case where the adhesive agent layer 20 with a frame member adheres to the fine unevenness | corrugation of the said frame member surface, and exhibits favorable frame member adhesiveness. . The structure that the thickness of the adhesive agent layer 20 is 30 micrometers or less is preferable in order to ensure cutability in the expand process mentioned later in the adhesive agent layer 20. As shown in FIG.

The adhesive agent layer 20 is 25 degreeC measured on the conditions of an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a temperature increase rate of 10 degree-C / min, with respect to the sample adhesive layer of width 10mm and 160 micrometers in thickness. The tensile storage modulus (first tensile storage modulus) of 5 to 120 MPa. This 1st tensile storage elastic modulus becomes like this. Preferably it is 6 MPa or more, More preferably, it is 7 MPa or more, More preferably, it is 110 MPa or less, More preferably, it is 100 MPa or less.

The adhesive agent layer 20 is -15 degreeC measured on the conditions of the distance between an initial chuck distance of 10 mm, a frequency of 900 Hz, a dynamic deformation of 0.005%, and a temperature increase rate of 5 degree-C / min with respect to the adhesive agent-layer sample piece of width 5mm and thickness 80micrometer. The tensile storage modulus (second tensile storage modulus) of is 3000 to 6000 MPa. This 2nd tensile storage elastic modulus becomes like this. Preferably it is 3200 Mpa or more, More preferably, it is 3500 Mpa or more, More preferably, it is 5800 Mpa or less, More preferably, it is 5500 Mpa or less.

Shear adhesive strength at -15 ℃ for SUS plane of the pressure-sensitive adhesive layer 20 is preferably 66N / cm ² or more, more preferably 68N / cm ² or more, more preferably 70N / cm ² or more to be. Shear adhesive force shall be the value measured by the shear adhesive force measuring method mentioned later regarding an Example. The said structure regarding shear adhesive force is suitable in ensuring the holding | maintenance of the frame member by the dicing die bond film X in -15 degreeC and the low temperature of its vicinity.

In this embodiment, in the in-plane direction D of the dicing die bond film X, the outer peripheral end 11e of the base material 11 in the dicing tape 10, and the outer peripheral end 12e of the adhesive layer 12 are carried out. From the outer peripheral end 20e of the adhesive agent layer 20, it is 1000 micrometers, Preferably it is 700 micrometers, More preferably, it is 500 micrometers, More preferably, it is a distance within 300 micrometers. That is, the outer peripheral end 20e of the adhesive agent layer 20 is inner side with respect to the outer peripheral ends 11e and 12e of the base material 11 and the adhesive layer 12 in the film surface direction D over the whole circumference. Between 1000 μm to outside 1000 μm, preferably between inside 700 μm to outside 700 μm, more preferably between inside 500 μm to outside 500 μm, more preferably inside 300 μm to outside 300 μm In between. In the above-described configuration in which the dicing tape 10 to the pressure-sensitive adhesive layer 12 and the adhesive agent layer 20 thereon have substantially the same dimensions in the in-plane direction D, the adhesive agent layer 20 is described above. As described above, the frame member bonding region is included in the surface 20a side in addition to the work bonding region.

In the dicing die bond film X, when the pressure-sensitive adhesive layer 12 of the dicing tape 10 is a radiation-curable pressure-sensitive adhesive layer, radiation in the T-type peeling test under conditions of 23 ° C. and a peeling speed of 300 mm / min. Peeling force between the adhesive layer 12 and the adhesive agent layer 20 before hardening becomes like this. Preferably it is 0.5 N / 20 mm or more, More preferably, it is 0.6 N / 20 mm or more. About such a T-type peeling test, it can carry out using a tensile tester (brand name "autograph AGS-J", the Shimadzu Corporation make). The sample piece provided for the test, for example, after bonding a backing tape (brand name "BT-315", manufactured by Nitto Denko Co., Ltd.) to the adhesive layer 20 side of the dicing die bond film X, width It manufactures by cutting out the sample piece of 50 mm x length 120 mm size.

The dicing die bond film X may be accompanied by the separator S as shown in FIG. Specifically, for each dicing die bond film X, a sheet-like form with a separator S may be taken, and the separator S is long and a plurality of dicing die bond films X are disposed thereon, and the separator ( S) may be wound and may be in the form of a roll. Separator S is an element for covering and protecting the surface of the adhesive agent layer 20 of dicing die bond film X, and when using dicing die bond film X, it peels from the said film. Examples of the separator (S) include plastic films, papers, and the like, which are surface-coated with a release agent such as a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a fluorine-based release agent or a long-chain alkyl acrylate-based release agent. . The thickness of the separator S is 5-200 micrometers, for example.

The dicing die bond film X which has the above structures can be manufactured as follows, for example.

First, as shown to Fig.3 (a), the adhesive agent composition layer C1 is formed on elongate separator S. FIG. The adhesive agent composition layer C1 can be formed by apply | coating the adhesive agent composition prepared for the adhesive agent layer 20 formation on the separator S. FIG. As a coating method of an adhesive agent composition, roll coating, screen coating, and gravure coating are mentioned, for example.

Next, as shown in FIG.3 (b), the adhesive composition layer C2 is formed on the adhesive agent composition layer C1. An adhesive composition layer C2 can be formed by apply | coating the adhesive composition prepared for the adhesive layer 12 formation on the adhesive agent composition layer C1. As a coating method of an adhesive composition, roll coating, screen coating, and gravure coating are mentioned, for example.

Next, by performing the collective heat treatment of the adhesive composition layer C1 and the adhesive composition layer C2 on the separator S, as shown in FIG.3 (c), the adhesive agent layer 20 'and the adhesive layer 12 are carried out. Form '). In this heat processing, both layers are dried as needed, and a crosslinking reaction is generated as needed in both layers. Heating temperature is 60-175 degreeC, for example, and a heating time is 0.5-5 minutes, for example. The adhesive agent layer 20 'is formed to be processed by the adhesive agent layer 20 mentioned above. The pressure-sensitive adhesive layer 12 'is formed to be processed into the pressure-sensitive adhesive layer 12 described above.

Next, as shown in FIG.3 (d), the base material 11 'is crimped | bonded and bonded on the adhesive layer 12'. The base material 11 'is processed and formed from the base material 11 mentioned above. The resin substrate 11 'can be produced by a film forming method such as a calender film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, or the like. . Predetermined surface treatment is given to the film to base material 11 'after film forming as needed. In this step, the bonding temperature is, for example, 30 to 50 ° C, and preferably 35 to 45 ° C. Bonding pressure (linear pressure) is 0.1-20 kgf / cm, for example, Preferably it is 1-10 kgf / cm. By this process, the elongate laminated sheet body which has a laminated structure of the separator S, the adhesive agent layer 20 ', the adhesive layer 12', and the base material 11 'is obtained.

Next, as shown to Fig.4 (a), about the said laminated sheet body, the process which intrudes a processing blade from the side of the base material 11 'to the separator S is performed (FIG.4 ( In a), a cleavage point is represented with a thick line typically). For example, while rotating a laminated sheet body at a constant speed in one direction F, a rotating roll rotatably disposed around an axis center orthogonal to the direction F, and having a processing blade for carrying the punching processing blade on the roll surface (not shown) The surface provided with the processing blade of the above) is brought into contact with the substrate 11 'side of the laminated sheet body with a predetermined pressing force. Thereby, the dicing tape 10 (base material 11, adhesive layer 12) and adhesive agent layer 20 are processed and formed collectively. After the several laminated bodies each containing the dicing tape 10 and the adhesive agent layer 20 were processed and formed on the separator S in this way, as shown to FIG. 4 (b), each laminated body (die The material laminations around the sing tape 10 and the adhesive agent layer 20 are removed from the separator S. As shown in FIG.

As described above, the dicing die bond film X can be manufactured.

In the manufacturing process of a semiconductor device, as mentioned above, in obtaining the semiconductor chip provided with the die bond film, the expansion process performed using a dicing die bond film, ie, the expansion process for cutting | disconnection is performed, There is a case. In this expanding process, all of the work such as the semiconductor wafer and the frame member such as the ring frame are held in the dicing die bond film, while the die bond film needs to be cut by the expansion of the dicing tape 10. have.

As for the adhesive agent layer 20 as the die bond film of the dicing die bond film X which concerns on the above-mentioned embodiment, the said 1st tensile storage elastic modulus in 25 degreeC is 5-120 MPa as mentioned above. Such a structure is suitable for ensuring the adhesive force at normal temperature with respect to a frame member, such as a ring frame, in the dicing die bond film X-the adhesive agent layer 20. Specifically, the same configuration is suitable for appropriately attaching the frame member to the dicing die bond film X to the adhesive agent layer 20 at normal temperature. In addition, this structure is suitable for realizing favorable adhesive force in the adhesive agent layer 20 which is normal temperature before and behind an expansion process. The dicing die bond film X is required not to generate adhesive residue on the frame member when peeled from the frame member attached thereto (prevention of residue upon peeling). From the standpoint of preventing the residue during peeling at room temperature in the adhesive layer 20 in, the first tensile storage modulus at 25 ° C. is preferably 6 MPa or more, and more preferably 7 MPa or more. From the standpoint of realizing high adhesion at room temperature to the frame member in the adhesive layer 20, the first tensile storage modulus at 25 ° C is preferably 110 MPa or less, and more preferably 100 MPa or less.

In addition, the adhesive agent layer 20 of the dicing die bond film X has the 2nd tensile storage elastic modulus in -15 degreeC as 3000-6000 Mpa as mentioned above. Such a structure is suitable for cutting the adhesive agent layer 20 in the expansion process performed at -15 ° C and the low temperature in the vicinity thereof, and at the low temperature with respect to the frame member in the adhesive agent layer 20. It is suitable for securing the adhesive force of. From the standpoint of achieving good cutability at low temperature in the adhesive layer 20, the second tensile storage modulus at -15 ° C is preferably 3200 MPa or more, and more preferably 3500 MPa or more. From the standpoint of realizing high adhesive strength at low temperature in the adhesive layer 20, the second tensile storage modulus at -15 ° C is preferably 5800 MPa or less, and more preferably 5500 MPa or less. The peeling of the adhesive agent layer 20-the dicing die bond film X from the frame member in the said expansion process tends to be suppressed so that the anti-frame member adhesive force at the expanded process implementation temperature is high.

As mentioned above, the dicing die bond film X is suitable for realizing the favorable adhesiveness to frame members, such as a ring frame, in the adhesive agent layer 20, ensuring the cutting property in an expand process.

In addition, the dicing die bond film X whose dicing tape 10 thru | or the adhesive layer 12 and the adhesive agent layer 20 on it have substantially the same design dimension in a film in-plane direction is as mentioned above. Similarly, one punching process for forming one dicing tape 10 having a laminated structure of the base material 11 and the pressure-sensitive adhesive layer 12 and the process for forming one adhesive layer 20 are performed. It is suitable for manufacturing by carrying out collectively in processing such as processing. Such a dicing die-bonding film X is suitable for realizing good adhesive force to the frame member while securing the cleavage property in the expanding process in the adhesive layer 20, and further reducing the number of manufacturing steps and reducing the manufacturing cost. It is suitable to manufacture efficiently from a viewpoint.

As described above, the shear adhesive force at -15 ° C to the SUS plane in the adhesive layer 20 of the dicing die bond film X is preferably 66 N / cm ² or more, more preferably 68 N / cm ² or more, More preferably, it is 70 N / cm <^2> or more. Such a configuration regarding the shear adhesive force is suitable for securing the holding of the frame member by the dicing die bond film X at a low temperature of -15 ° C and its vicinity.

As mentioned above, the adhesive agent layer 20 of the dicing die bond film X, Preferably it contains the polymer component of the weight average molecular weight 800000-2 million, and the glass transition temperature -10-3 degreeC. Such a structure aims at balancing the cleavage at low temperature in the adhesive agent layer 20, the adhesive force of the adhesive agent layer 20 with respect to a frame member, and the residue prevention at the time of peeling the adhesive agent layer 20. Suitable for use. As described above, the weight average molecular weight of the polymer is more preferably 900000 or more, and more preferably, from the viewpoint of securing cutability at low temperature in the adhesive agent layer 20 or from the viewpoint of preventing residue during peeling. More than 1000000. As mentioned above, the weight average molecular weight of the said polymer is more preferably 1800000 or less, More preferably, it is 1500000 or less from a viewpoint of ensuring the frame member adhesive force of the adhesive agent layer 20. As shown in FIG. As mentioned above, the glass transition temperature of the said polymer is more preferably -8 degreeC or more, More preferably, it is -6.5 degreeC or more from a viewpoint of ensuring splitting property at low temperature in the adhesive agent layer 20. . As mentioned above, the glass transition temperature of the said polymer is more preferably 0 degrees C or less, More preferably, it is -1.5 degrees C or less from the viewpoint of ensuring the frame member adhesive force at low temperature in the adhesive agent layer 20. to be.

The pressure sensitive adhesive layer 12 of the dicing tape 10 of the dicing die bond film X is preferably a radiation curable pressure sensitive adhesive layer. When the pressure-sensitive adhesive layer 12 of the dicing tape 10 is a radiation-curable pressure-sensitive adhesive layer, in the dicing die bond film X, radiation in the T-type peeling test under conditions of 23 ° C. and a peeling speed of 300 mm / min. As mentioned above, the peeling force between the adhesive layer 12 and the adhesive agent layer 20 before hardening becomes like this. Preferably it is 0.5 N / 20 mm or more, More preferably, it is 0.6 N / 20 mm or more. Such a configuration regarding the peeling adhesive force is preferable in securing the large frame member adhesive force in the adhesive agent layer 20.

5 to 10 show a semiconductor device manufacturing method according to an embodiment of the present invention.

In this semiconductor device manufacturing method, first, as shown in Figs. 5A and 5B, divided grooves 30a are formed in the semiconductor wafer W (divided groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already made in the side of the 1st surface Wa in the semiconductor wafer W, and the wiring structure etc. (not shown) required for the said semiconductor element are the 1st surface Wa. It is already formed on the phase. In this step, the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, and then the semiconductor wafer W is held on the wafer processing tape T1 in the semiconductor state. The dividing groove 30a of a predetermined depth is formed on the side of the first surface Wa of the wafer W using a rotating blade such as a dicing apparatus. The divided grooves 30a are voids for separating the semiconductor wafer W into semiconductor chip units (in FIG. 5 to FIG. 7, the divided grooves 30a are schematically shown by thick lines).

Next, as shown to Fig.5 (c), the bonding of the tape T2 for wafer processing which has adhesive surface T2a to the 1st surface Wa side of the semiconductor wafer W, and from the semiconductor wafer W Peeling of the tape T1 for wafer processing is performed.

Next, as shown in FIG.5 (d), in the state in which the semiconductor wafer W is hold | maintained in the tape T2 for wafer processing, until the semiconductor wafer W reaches | attains predetermined thickness from the 2nd surface Wb. It is thinned by the grinding process (wafer thinning process). Grinding can be performed using the grinding-processing apparatus provided with a grinding wheel. By this wafer thinning process, in this embodiment, the semiconductor wafer 30A which can be separated into the some semiconductor chip 31 is formed. The semiconductor wafer 30A has a site | part (connection part) which connects the site | part which becomes individualized into the some semiconductor chip 31 in the said wafer on the 2nd surface Wb side specifically. The thickness of the connection portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the split surface 30a side of the second surface Wb is 1 to 30, for example. M, preferably 3 to 20 m.

Next, as shown to Fig.6 (a), the semiconductor wafer 30A hold | maintained by the tape T2 for wafer processing is bonded with respect to the adhesive agent layer 20 of the dicing die bond film X. Thereafter, as shown in FIG. 6B, the wafer processing tape T2 is peeled from the semiconductor wafer 30A. When the adhesive layer 12 in the dicing die bond film X is a radiation curable adhesive layer, the adhesive agent layer of the semiconductor wafer 30A instead of the radiation irradiation mentioned above in the manufacturing process of the dicing die bond film X is carried out. After bonding to (20), you may irradiate the adhesive layer 12 with radiation, such as an ultraviolet-ray, from the side of the base material 11. The irradiation amount is, for example, 50 to 500 mJ / cm ² , and preferably 100 to 300 mJ / cm ² . In the dicing die bond film X, the area | region (irradiation area R shown in FIG. 1) to which irradiation as an adhesive force reduction measure of the adhesive layer 12 is performed is the adhesive agent layer 20 in the adhesive layer 12, for example. ) It is an area except the peripheral part in the joining area.

Next, after the ring frame 41 is adhered on the adhesive agent layer 20 in the dicing die bond film X, as shown in FIG.7 (a), the said process involving a semiconductor wafer 30A. The dicing die bond film X is fixed to the retainer 42 of the expander device.

Next, under a relatively low temperature condition, the first expanded process (cool expanded process) is performed as shown in FIG. 7B, and the semiconductor wafer 30A is separated into a plurality of semiconductor chips 31. In addition, the adhesive agent layer 20 of the dicing die bond film X is cut | disconnected by the small adhesive agent layer 21, and the semiconductor chip 31 provided with an adhesive agent layer is obtained. In this step, the hollow cylindrical pushing member 43 included in the expander is raised to abut on the dicing tape 10 in the lower side of the drawing of the dicing die bond film X to form a semiconductor wafer ( The dicing tape 10 of the dicing die bond film X to which 30A) was bonded is expanded so that it stretches in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expand is performed in the dicing tape 10 on the conditions which the tensile stress generate | occur | produces preferably in the range of 15-32 Mpa, More preferably, 20-32 Mpa. The temperature conditions in a cool expand process are 0 degrees C or less, for example, Preferably it is -20-5 degreeC, More preferably, it is -15-5 degreeC, More preferably, it is -15 degreeC. The expansion speed (speed at which the pushing member 43 rises) in the cool expansion step is preferably 0.1 to 100 mm / sec. In addition, the amount of expansion in a cool expansion process becomes like this. Preferably it is 3-16 mm.

In this step, splitting occurs in a thin and easily cracked portion of the semiconductor wafer 30A, so that the semiconductor chip 31 is separated into pieces. In addition, in this process, deformation is suppressed in each area | region in which each semiconductor chip 31 is in close contact in the adhesive agent layer 20 in close contact with the adhesive layer 12 of the dicing tape 10 expanded. On the other hand, the tensile stress which arises in the dicing tape 10 acts in the position which opposes the division groove | channel between the semiconductor chips 31 in the state in which such a deformation suppression action does not occur. As a result, in the adhesive agent layer 20, the part which opposes the division groove | channel between the semiconductor chips 31 becomes cut | disconnected. After the present step, as shown in FIG. 7C, the pushing member 43 is lowered, and the expanded state in the dicing tape 10 is released.

Next, a 2nd expand process is performed as shown in FIG. 8A under relatively high temperature conditions, and the distance (separation distance) between the semiconductor chips 31 provided with an adhesive agent layer is expanded. In this process, the hollow cylindrical pushing member 43 with which an expander is equipped is raised again, and the dicing tape 10 of the dicing die bond film X is expanded. The temperature conditions in a 2nd expansion process are 10 degreeC or more, for example, Preferably it is 15-30 degreeC. The expansion speed (speed at which the pushing member 43 rises) in the second expansion step is, for example, 0.1 to 10 mm / sec, preferably 0.3 to 1 mm / sec. In addition, the amount of expansion in a 2nd expansion process is 3-16 mm, for example. In this process, the separation distance of the semiconductor chip 31 with the adhesive agent layer can be increased so that the semiconductor chip 31 with the adhesive agent layer can be appropriately picked up from the dicing tape 10 in the pickup process described later. have. After the present step, as shown in FIG. 8B, the pushing member 43 is lowered, and the expanded state in the dicing tape 10 is released. In suppressing the narrowing of the separation distance of the semiconductor chip 31 with the adhesive agent layer on the dicing tape 10 after the expanded state is released, before dividing the expanded state, the dicing tape 10 is applied to the dicing tape 10. It is preferable to heat and shrink a portion outside the semiconductor chip 31 holding region in the semiconductor chip 31 holding region.

Next, after going through the cleaning process which wash | cleans the semiconductor chip 31 side in the dicing tape 10 with the semiconductor chip 31 with an adhesive agent layer using cleaning liquid, such as water, as needed. 9, the semiconductor chip 31 provided with the adhesive agent layer is picked up from the dicing tape 10 (pickup process). For example, with respect to the semiconductor chip 31 having the adhesive agent layer to be picked up, the dicing tape 10 is raised by raising the pin member 44 of the pickup mechanism in the lower side of the drawing of the dicing tape 10. After being pushed up through, the adsorption jig 45 holds the adsorption. In the pick-up process, the pushing speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the lifting amount of the pin member 44 is, for example, 50 to 3000 µm.

Next, as shown to Fig.10 (a), the semiconductor chip 31 provided with the picked-up adhesive layer is temporarily fixed to the predetermined to-be-adhered body 51 through the adhesive agent layer 21. Next, as shown to FIG. As the to-be-adhered body 51, a lead frame, a tape automated bonding (TAB) film, a wiring board, and the semiconductor chip produced separately are mentioned, for example. The shear adhesive force at 25 degrees C at the time of the temporarily adhering the adhesive agent layer 21 with respect to the to-be-adhered body 51 becomes like this. Preferably it is 0.2 MPa or more, More preferably, it is 0.2-10 MPa. The structure that the said shear adhesive force of the adhesive agent layer 21 is 0.2 Mpa or more is the wire-bonding process mentioned later WHEREIN: The adhesive agent layer 21, the semiconductor chip 31, or the to-be-adhered body 51 by ultrasonic vibration or heating are mentioned. It is suitable to suppress the occurrence of shear deformation at the adhesive side of the substrate and to perform wire bonding appropriately.

Next, as shown in FIG.10 (b), the electrode pad (not shown) of the semiconductor chip 31 and the terminal part (not shown) which the to-be-adhered body 51 have electrically connected through the bonding wire 52. Next, as shown to FIG. (Wire bonding step). The connection of the electrode pad of the semiconductor chip 31, the terminal part of the to-be-adhered body 51, and the bonding wire 52 is implement | achieved by the ultrasonic welding with heating, and is performed so that the adhesive agent layer 21 may not be thermosetted. . As the bonding wire 52, a gold wire, an aluminum wire, or a copper wire can be used, for example. The wire heating temperature in wire bonding is 80-250 degreeC, for example, Preferably it is 80-220 degreeC. In addition, the heating time is several seconds-several minutes.

Next, as shown in FIG.10 (c), the semiconductor chip 31 is sealed by the sealing resin 53 for protecting the semiconductor chip 31 and the bonding wire 52 on the to-be-adhered body 51. Then, as shown to FIG. (Sealing process). In this process, thermosetting of the adhesive agent layer 21 advances. In this process, the sealing resin 53 is formed by the transfer mold technique performed using a metal mold | die, for example. As a constituent material of the sealing resin 53, an epoxy resin can be used, for example. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C, and the heating time is, for example, 60 seconds to several minutes. If the curing of the sealing resin 53 does not proceed sufficiently in this step (sealing step), a post curing step for completely curing the sealing resin 53 is performed after this step. Even if the adhesive agent layer 21 is not fully thermoset in a sealing process, the thermosetting of the adhesive agent layer 21 with the sealing resin 53 is attained in a post-curing process. In the post curing step, the heating temperature is, for example, 165 to 185 ° C, and the heating time is, for example, 0.5 to 8 hours.

As described above, the semiconductor device can be manufactured.

In this embodiment, as mentioned above, after the semiconductor chip 31 with an adhesive agent layer is temporarily fixed to the to-be-adhered body 51, the adhesive agent layer 21 does not reach complete thermosetting, but a wire bonding process is performed. Is done. Instead of such a structure, after the semiconductor chip 31 with an adhesive agent layer is temporarily fixed to the to-be-adhered body 51, a wire bonding process may be performed after the adhesive agent layer 21 is thermosetted.

In the semiconductor device manufacturing method, after passing through the above-described process with reference to FIG. 5C, the wafer thinning process shown in FIG. 11 may be performed instead of the wafer thinning process described above with reference to FIG. 5D. do. In the wafer thinning step shown in FIG. 11, in the state where the semiconductor wafer W is held on the tape T2 for wafer processing, the wafer is thinned by grinding from the second surface Wb until the predetermined thickness is reached, The semiconductor wafer divided body 30B held in the wafer processing tape T2 including the plurality of semiconductor chips 31 is formed. In this process, the method (first method) of grinding a wafer until the division groove 30a itself is exposed to the second surface Wb side may be adopted, and the division groove ( The wafer is ground until it reaches 30a), and thereafter, cracks are generated between the dividing groove 30a and the second surface Wb by the action of the pressing force from the grinding wheel to the wafer to thereby form the semiconductor wafer partitioned body 30B. You may employ | adopt the method (2nd method) which forms the form. Depending on the method employed, the depth from the first surface Wa of the divided grooves 30a formed as described above with reference to FIGS. 5A and 5B is appropriately determined. . In FIG. 11, the division groove | channel 30a which passed through the 1st method, or the division groove | channel 30a which passed through the 2nd method, and the crack subsequent to this are shown with a thick line typically. In this embodiment, with respect to the dicing die bond film X, the semiconductor wafer divided body 30B produced in this way is bonded instead of the semiconductor wafer 30A mentioned above, and then it mentioned above with reference to FIGS. 6-10. Each process may be performed.

12 (a) and 12 (b) show a first expand process (cool expand process) performed after the semiconductor wafer divided body 30B is bonded to the dicing die bond film X. FIG. In this process, the hollow cylindrical pushing-up member 43 with which an expander is equipped raises in contact with the dicing tape 10 in the lower side of the drawing of the dicing die bond film X, and divides a semiconductor wafer. The dicing tape 10 of the dicing die bond film X to which the sieve 30B was bonded is expanded so that it may stretch in two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer division 30B. This expand is performed in the dicing tape 10 on the conditions which the tensile stress generate | occur | produces, for example in the range of 1-100 MPa, Preferably 5-40 MPa. The temperature condition in this process is 0 degrees C or less, for example, Preferably it is -20-5 degreeC, More preferably, it is -15-5 degreeC, More preferably, it is -15 degreeC. The expansion speed (speed at which the pushing member 43 rises) in this step is preferably 1 to 500 mm / second. In addition, the amount of expansion in this process becomes like this. Preferably it is 50-200 mm. By this cool expansion process, the adhesive agent layer 20 of the dicing die bond film X is cut into the small adhesive agent layer 21, and the semiconductor chip 31 provided with the adhesive agent layer is obtained. Specifically, in this step, in the adhesive layer 20 in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded, each semiconductor chip 31 of the semiconductor wafer partitioned body 30B is Deformation is suppressed in each region in close contact with the dicing tape 10 in a state in which the deformation inhibiting action does not occur at a location facing the divided grooves 30a between the semiconductor chips 31. Tensile stress acts. As a result, in the adhesive agent layer 20, the part which opposes the division groove | channel 30a between the semiconductor chips 31 becomes cut | disconnected.

In the semiconductor device manufacturing method of the present embodiment, instead of the above-described configuration in which the semiconductor wafer 30A or the semiconductor wafer divider 30B is bonded to the dicing die bond film X, for the dicing die bond film X, The semiconductor wafer 30C produced as follows may be joined.

As shown in FIG. 13A and FIG. 13B, first, a modified region 30b is formed in the semiconductor wafer W. As shown in FIG. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already made in the side of the 1st surface Wa in the semiconductor wafer W, and the wiring structure etc. (not shown) required for the said semiconductor element are the 1st surface Wa. It is already formed on the phase. In this step, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, the wafer is held in the state in which the semiconductor wafer W is held on the wafer processing tape T3. The laser beam with the focusing point set inside is irradiated along the dividing line with respect to the semiconductor wafer W from the side opposite to the tape T3 for wafer processing, and is modified in the semiconductor wafer W by ablation by multiphoton absorption. Region 30b is formed. The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor chip units. The method of forming the modified area | region 30b on a dividing line by laser beam irradiation in a semiconductor wafer is demonstrated in detail in Unexamined-Japanese-Patent No. 2002-192370, for example. In the said method, the laser beam irradiation conditions in this embodiment are adjusted suitably within the range of the following conditions, for example.

<Laser light irradiation conditions>

(A) laser light

Laser Light Source Semiconductor Laser Excitation Nd: YAG Laser

Wavelength 1064nm

Laser light spot cross section 3.14 × 10 ^-8 cm ²

Oscillation form Q switch pulse

100 kHz repetition frequency

Pulse width 1㎲ or less

Output 1mJ or less

Laser light quality TEM00

Polarization characteristics linearly polarized light

(B) condensing lens

100 times or less

NA 0.55

100% or less transmittance to laser light wavelength

(C) 280 mm / sec or less movement speed of the loading table on which the semiconductor substrate is loaded

Next, in the state in which the semiconductor wafer W is held by the tape T3 for wafer processing, the semiconductor wafer W is thinned by the grinding process from the 2nd surface Wb until it reaches predetermined thickness, and, in FIG. As shown in (c), the semiconductor wafer 30C which can be separated into a plurality of semiconductor chips 31 is formed (wafer thinning step). In this embodiment, about the dicing die bond film X, the semiconductor wafer 30C produced as mentioned above is bonded instead of the semiconductor wafer 30A, and then each process mentioned above with reference to FIGS. 6-10. This may be done.

14A and 14B show a first expand process (cool expand process) performed after the semiconductor wafer 30C is bonded to the dicing die bond film X. FIGS. In this step, the hollow cylindrical pushing member 43 included in the expander is raised to abut on the dicing tape 10 in the lower side of the drawing of the dicing die bond film X, thereby providing a semiconductor wafer ( The dicing tape 10 of the dicing die bond film X to which 30C) was bonded is expanded so that it may stretch in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expand is performed in the dicing tape 10 on the conditions which the tensile stress generate | occur | produces, for example in the range of 1-100 MPa, Preferably 5-40 MPa. The temperature condition in this process is 0 degrees C or less, for example, Preferably it is -20-5 degreeC, More preferably, it is -15-5 degreeC, More preferably, it is -15 degreeC. The expansion speed (speed at which the pushing member 43 rises) in this step is preferably 1 to 500 mm / second. In addition, the amount of expansion in this process becomes like this. Preferably it is 50-200 mm. By this cool expansion process, the adhesive agent layer 20 of the dicing die bond film X is cut into the small adhesive agent layer 21, and the semiconductor chip 31 provided with the adhesive agent layer is obtained. Specifically, in this step, cracks are formed in the modified region 30b which is vulnerable in the semiconductor wafer 30C, so that the chipping of the semiconductor chip 31 occurs. In addition, in this process, in the adhesive agent layer 20 in close contact with the adhesive layer 12 of the dicing tape 10 expanded, each semiconductor chip 31 of the semiconductor wafer 30C is closely contacted. Deformation is suppressed in each area | region which exists, and the tensile stress which generate | occur | produces in the dicing tape 10 acts in the position which opposes the crack formation location of a wafer in the state in which such a deformation | transformation suppression action does not generate | occur | produce. As a result, in the adhesive agent layer 20, the part which opposes the crack formation point between the semiconductor chips 31 will be cut | disconnected.

As mentioned above, the dicing die bond film X can be used in obtaining the semiconductor chip provided with the adhesive agent layer. In addition, the dicing die bond film X can be used also in obtaining the semiconductor chip provided with the adhesive agent layer in the case of laminating | stacking a some semiconductor chip and carrying out three-dimensional mounting. The spacer may be interposed with the adhesive agent layer 21 between the semiconductor chips 31 in such a three-dimensional mounting, and the spacer does not need to be interposed.

<Production of dicing tape>

In a reaction vessel including a cooling tube, a nitrogen inlet tube, a thermometer, and a stirring device, 100 mol parts of dodecyl acrylate, 20 mol parts of 2-hydroxyethyl acrylate (2HEA), and 100 mass parts of these monomer components. The mixture containing benzoyl peroxide as a 0.2 mass part polymerization initiator and toluene as a polymerization solvent was stirred at 60 degreeC for 10 hours in nitrogen atmosphere (polymerization reaction). Thus, to obtain a polymer solution containing an acrylic polymer P _1. The weight average molecular weight (Mw) of the acrylic polymer P ₁ of the art polymer solution was 450,000. Next, a mixture comprising a polymer and a solution containing acrylic polymer P _1, 2- yloxy and the isocyanate (MOI) and methacrylonitrile, additional dibutyltin laurate as a catalyst relay agent, at room temperature for 48 hours It stirred under air atmosphere (addition reaction). The art for the reaction solution, a molar ratio of the amount of the MOI 2HEA total amount of units derived to the hydroxyl group of the acrylic polymer P ₁ was 0.2. Further, the art in the reaction solution, the amount of di-butyl tin di-dilaurate, 0.03 parts by mass with respect to 100 parts by mass of the acrylic polymer P _1. By the addition reaction, to obtain a polymer solution containing an acrylic polymer P ₂ having a methacryloyl group at the side chain. Next, 0.75 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Corp.) and 2 parts by mass of a photopolymerization initiator (brand name "Irgacure") is added to 100 parts by mass of the acrylic polymer P ₂ in the polymer solution. 184 ", manufactured by BASF, Inc.), were mixed, and toluene was added and diluted with respect to the mixture so that the viscosity at room temperature of the mixture was 500 mPa · s, thereby obtaining a pressure-sensitive adhesive solution. Next, a pressure-sensitive adhesive solution was applied using an applicator on a silicone release treatment surface of a PET separator (thickness 38 μm) having a surface on which silicone release treatment was performed to form a coating film, and the coating film was formed at 130 ° C. for 2 minutes. It heat-dried and formed the adhesive layer of thickness 10micrometer on the PET separator. Next, using a laminator, the base material (brand name "RB-0103", thickness 125 micrometers, Kurashiki Boseki Co., Ltd. product) made from ethylene-vinyl acetate copolymer (EVA) is room temperature on the exposed surface of this adhesive layer. Bonded at. The dicing tape was produced as mentioned above.

<Formation of an adhesive layer>

Acrylic resin A ₁ (ethyl acrylate and butyl acrylate and acrylonitrile and glycidyl meth copolymer, weight average molecular weight of the methacrylate is 1,000,000, and a glass transition temperature of -1.5 ℃) a solid phenolic resin and 60 parts by mass (trade name " 15 parts by mass of MEH-7851SS '', solid at 23 ° C, manufactured by Meiwa Kasei Co., Ltd., and 25 parts by mass of silica filler (trade name "SO-E2", with an average particle diameter of 0.5 µm and manufactured by Admatex Co., Ltd.) It added to methyl ethyl ketone, mixed, and adjusted density | concentration so that the viscosity in room temperature may be 1000 mPa * s, and the adhesive agent composition was obtained. Next, the adhesive agent composition is apply | coated using an applicator on the mold release process surface of the PET separator (38 micrometers in thickness) which has a surface to which the mold release process was performed, and a coating film is formed, and this coating film is heated at 130 degreeC for 2 minutes. It dried and formed the adhesive agent layer as a die-bonding film of thickness 10micrometer on the PET separator.

<Production of dicing die bond film>

After peeling a PET separator from the dicing tape mentioned above, the adhesive layer exposed in the dicing tape and the above-mentioned adhesive agent layer accompanying a PET separator were bonded together at room temperature using the laminator, and the laminated sheet body was obtained. . Next, about this laminated sheet body, the punching process which intrudes a process blade from the side of the EVA base material of a dicing tape to the separator was performed. Specifically, while rotating the laminated sheet body at a speed of 10 m / min in one direction, it is rotatably disposed around an axis center orthogonal to the direction, and a rotary roll having a machining blade having a circular blade for a round punching machining thomson blade wound around the roll surface. The surface provided with the processing blade was made to contact the EVA base material side of a laminated sheet body with predetermined pressing force, and the punching process was performed. The circumferential length of the rotating roll used for this punching process, ie, the peripheral length, is 378.9 mm. In addition, the Thomson blade wound around the rotating roll surface is made of SUS, and arrange | positions the circle | round | yen of diameter 370mm on the roll surface so that a punching process is possible, The height of a blade is 0.3 mm, and the blade angle which a blade edge forms is 50 degrees. By such a punching process, the dicing tape and the adhesive agent layer were processed and formed collectively in disk shape, and the dicing die bond film was formed on the separator. The material stack around the formed dicing die bond film was then removed from the separator phase. As mentioned above, the dicing die bond film of Example 1 which has a laminated structure containing the dicing tape and the adhesive agent layer as a die bond film was produced. The composition of the adhesive agent layer in Example 1 is shown in Table 1 with the adhesive agent layer composition of another Example and a comparative example. (In Table 1, the unit of each numerical value regarding an adhesive agent layer composition is in the said layer. Relative to "parts by mass").

That a compounding amount of the acrylic resin A ₁ 48 parts by weight instead of 60 parts by mass, to the compounding amount of the solid phenol resin (trade name "MEH-78511SS", manufactured by whether or Meiwa Kasei first) portion 12 mass rather than by 15 parts by mass and, The point in Example 2 was carried out similarly to the adhesive agent layer of Example 1 except having set the compounding quantity of the silica filler (brand name "SO-E2" and the product made from Admatex) to 40 mass parts instead of 25 mass parts. The adhesive layer (thickness 10 micrometers) was produced on PET separator. And the dicing die bond film of Example 2 was carried out similarly to the dicing die bond film of Example 1 except having used the said adhesive agent layer in Example 2 instead of the adhesive agent layer in Example 1. Produced.

60 parts by mass of acrylic resin A ₂ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight of 1000000, glass transition temperature of -6.5 ° C) instead of 60 parts by mass of acrylic resin A ₁ Except having used, it carried out similarly to the adhesive agent layer of Example 1, and produced the adhesive agent layer (10 micrometers in thickness) in Example 3 on a PET separator. And except for using the said adhesive agent layer in Example 3 instead of the adhesive agent layer in Example 1, the dicing die bond film of Example 3 was carried out similarly to the dicing die bond film of Example 1. Produced.

48 parts by mass of acrylic resin A ₂ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight of 1000000, glass transition temperature of -6.5 ° C) instead of 60 parts by mass of acrylic resin A ₁ The thing which used, the compounding quantity of the solid phenol resin (brand name "MEH-78511SS", the product made by Meiwa Kasei Co., Ltd.) was made into 12 mass parts instead of 15 mass parts, and a silica filler (brand name "SO-E2", adds KKK) The adhesive agent layer (10 micrometers in thickness) in Example 4 was produced on PET separator in the same manner as the adhesive agent layer of Example 1, except that the compounding quantity of the material (Matex) was made into 40 mass parts instead of 25 mass parts. . And the dicing die bond film of Example 4 was carried out similarly to the dicing die bond film of Example 1 except having used the said adhesive agent layer in Example 4 instead of the adhesive agent layer in Example 1. Produced.

[Comparative Example 1]

42.4 parts by mass of acrylic resin A ₃ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight of 1000000, glass transition temperature of 4 ° C.) instead of 60 parts by mass of acrylic resin A ₁ The thing which made compounding quantity of thing, solid phenol resin (a brand name "MEH-78511SS", the product made by Meiwa Kasei Kasei Kasei) into 10.6 mass part instead of 15 mass parts, and a silica filler (brand name "SO-E2", KK KK) The adhesive agent layer (10 micrometers in thickness) in Comparative Example 1 was produced on the PET separator similarly to the adhesive agent layer of Example 1 except having made compounding quantity of tex) into 47 mass parts instead of 25 mass parts. And the dicing die bond film of the comparative example 1 was carried out similarly to the dicing die bond film of Example 1 except having used the said adhesive agent layer in the comparative example 1 instead of the adhesive agent layer in Example 1. Produced.

[Comparative Example 2]

80 parts by mass of acrylic resin A ₂ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight of 1000000, glass transition temperature of -6.5 ° C) instead of 60 parts by mass of acrylic resin A ₁ The point of Example 1 except having used the compounding quantity of the used, solid phenol resin (brand name "MEH-78511SS", the product made by Meiwa Kasei), instead of 15 mass parts, and the silica filler was not used. In the same manner as in the adhesive layer, the adhesive agent layer (thickness 10 μm) in Comparative Example 2 was produced on a PET separator. And except for using the said adhesive agent layer in the comparative example 2 instead of the adhesive agent layer in Example 1, the dicing die bond film of the comparative example 2 was carried out similarly to the dicing die bond film of Example 1. Produced.

[1st tensile storage elastic modulus (25 degreeC)]

In each of the adhesive agent layers in Examples 1 to 4 and Comparative Examples 1 and 2, at 25 ° C based on the dynamic viscoelasticity measurement performed using a dynamic viscoelasticity measuring device (brand name "RSAIII", manufactured by TA Instruments). Tensile storage modulus (first tensile storage modulus) was investigated. The sample piece provided for the dynamic viscoelasticity measurement formed the laminated body which laminated | stacked each adhesive agent layer with thickness of 160 micrometers, and cut out and prepared it to the size of width 10mm x length 30mm from the said laminated body. In this measurement, the initial chuck distance of the specimen holding chuck was 22.5 mm, the measurement mode was the tension mode, the measurement temperature range was -30 ° C to 100 ° C, and the frequency was 1 Hz. Was 0.005% and the temperature increase rate was 10 degree-C / min. Table 1 shows the tensile storage modulus (MPa) at the obtained 25 ° C.

[2nd tensile storage elastic modulus (-15 degreeC)]

-15 degreeC based on the dynamic viscoelasticity measurement performed about the adhesive agent layer in Examples 1-4 and Comparative Examples 1 and 2 using a dynamic-viscoelasticity measuring apparatus (brand name "Rheogel-E4000", the product made by UBM). The tensile storage modulus (second tensile storage modulus) at was investigated. The sample piece provided for the dynamic viscoelasticity measurement formed the laminated body which laminated | stacked each adhesive agent layer with thickness of 80 micrometers, and cut out and prepared it to the size of width 5mm x length 25mm from the said laminated body. In addition, in this measurement, the initial chuck distance of the sample piece holding chuck is 10 mm, the measurement mode is the tension mode, the measurement temperature range is -30 ° C to 100 ° C, and the frequency is 900 Hz. It was 0.005%, and the temperature increase rate was 5 degrees C / min. Table 2 shows the second tensile storage modulus (MPa) at -15 ° C.

Shear Adhesion

About each dicing die bond film of Examples 1-4 and Comparative Examples 1 and 2, the shear adhesive force in -15 degreeC with respect to the SUS board was measured. The sample piece provided for this measurement was produced as follows. First, in the dicing die bond film, the adhesive agent layer was peeled from the dicing tape. Next, a back contact tape (brand name "BT-315", manufactured by Nitto Denko Co., Ltd.) was bonded to the surface of the side that was bonded to the dicing tape in this adhesive layer. And the sample piece of the size of width 10mm x length 100mm was cut out from the obtained contact adhesive layer.

The produced sample piece was bonded with respect to the SUS board at room temperature. This SUS plate has been subjected to surface cleaning treatment by wiping with a nonwoven fabric wiper soaked with toluene and wiping with a nonwoven fabric wiper soaked with methanol. In the joining operation, an area of 10 mm x 10 mm in the sample one end portion was pressed against the end of the SUS plate with a reciprocating load by a 2 kg roller. And about the said sample piece and the SUS board, after leaving for 30 minutes at room temperature, the shear adhesive force was measured using the tensile tester (brand name "autograph AGS-J", the Shimadzu Corporation make). In this measurement, the measurement temperature was -15 ° C, the tensile velocity was 1000 mm / min, and the maximum stress value obtained was referred to as shear adhesion force (N / cm ² ).

<Frame Retention at 23 ° C>

About each dicing die bond film of Examples 1-4 and Comparative Examples 1 and 2, the adhesiveness to the ring frame or holding property was examined as follows. First, a 12-inch-diameter SUS ring frame (manufactured by Disco) was bonded to the adhesive agent layer side of a dicing die bond film using the bonding apparatus (MA-3000II, the product made by Nitto Precision Machinery Co., Ltd.). This bonding was performed under the conditions of a bonding rate (10 mm / sec and a temperature of 60 ° C.), then stored in a case in a horizontal state, and left for one week at room temperature. Then, the ring frame from the adhesive layer The peeling of the ring frame from the dicing die bond film or the adhesive agent layer was evaluated as "good", and the peeling of the ring frame was evaluated as "defect". The evaluation results are shown in Table 1.

[Cutability at Cool Expand Process (-15 ° C)]

Using each of the dicing die bond films of Examples 1 to 4 and Comparative Examples 1 and 4, the following bonding process, first expand process for cutting (cool expand process), and second expand for separation The pand process (room temperature expand process) was performed.

In the bonding process, the semiconductor wafer partition body held by the tape for wafer processing (brand name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) is bonded to the adhesive layer of the dicing die bond film, and thereafter, the semiconductor wafer. The tape for wafer processing was peeled off in the divided body. In the joining, a laminator was used, the joining speed was 10 mm / sec, the temperature condition was 60 degreeC, and the pressure condition was 0.15 MPa. In addition, the semiconductor wafer divided body is formed and prepared as follows. First, a bare wafer (12 inches in diameter, 780 µm in thickness, manufactured by Tokyo Chemical Industries, Ltd.) in a state of being held together with a ring frame on a tape for wafer processing (brand name "V12S-R2-P", manufactured by Nitto Denko Co., Ltd.) ), The dividing groove (25 μm in width, 50 μm in depth, 1 compartment for individualization) by the rotating blade using a dicing device (trade name “DFD6260”, manufactured by Disco) from the side of one side thereof. 6 mm x 12 mm lattice was formed.Next, the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) was bonded to the dividing groove forming surface, and then the above-mentioned wafer processing tape ( The brand name "V12S-R2-P") was peeled off from the wafer, and then the other side of the wafer (the surface not having a dividing groove was formed) using a backgrinding device (brand name "DGP8760", manufactured by Disco Co., Ltd.). Toward the side of) The wafer was thinned down to a thickness of 20 µm by grinding of the rotor, and then mirror-finished was performed on the grinding surface by dry polishing performed using the same apparatus. (It is in the state hold | maintained by the tape for a wafer process.) This semiconductor wafer division body contains some semiconductor chip (6 mm x 12 mm).

The cool expanded process was performed with the cool expanded unit using the die separate apparatus (brand name "die separator DDS3200", the disco make). Specifically, a ring frame made of SUS having a diameter of 12 inches in a frame bonding region (around the work bonding region) of the adhesive layer in the above-described dicing die bond film with a semiconductor wafer partitioned body ( Inc. disco) was attached at room temperature. Next, the dicing die bond film was set in the apparatus, and the dicing tape of the dicing die bond film with a semiconductor wafer divider was expanded by the cool expand unit of the apparatus. In this cool expand process, the temperature is -15 deg. C, the expansion speed is 300 mm / sec, and the amount of expansion is 15 mm.

The normal temperature expanded process was performed with the normal temperature expanded unit using the die separate apparatus (brand name "die separator DDS3200", the disco make). Specifically, the dicing tape of the dicing die bond film with the semiconductor wafer partition which passed through the above-mentioned cool expansion process was expanded with the normal temperature expand unit of the same apparatus. In this room temperature expand process, the temperature is 23 ° C., the expansion speed is 1 mm / sec, and the amount of expansion is 10 mm. Then, the heat shrink processing was performed about the dicing die bond film which passed through the normal temperature expansion. The processing temperature is 200 ° C., and the processing time is 20 seconds.

The cut point with respect to the total number of the semiconductor chips contained in a semiconductor wafer partition body in the process which carried out the process similar to the above performed using each dicing die bond film of Examples 1-4 and Comparative Examples 1 and 2. The total number ratio of semiconductor chips accompanying the adhesive layer was investigated. And about the splitting property of an adhesive agent layer, the case where the said ratio is 80% or more was evaluated as "good | favorableness," and the case where the said ratio was less than 80% was evaluated as "defective." The evaluation results are shown in Table 1.

[evaluation]

As for the dicing die bond films of Examples 1-4, the favorable result was all obtained about frame holding property and cutability in a cool-expand process (-15 degreeC). In contrast, the dicing die bond film of Comparative Example 1 could not hold the ring frame in the adhesive agent layer because the tensile storage modulus of the adhesive agent layer was too high. Therefore, the cool expansion process using the dicing die bond film of the comparative example 1 could not be performed. Moreover, in the dicing die bond film of the comparative example 2, since the tensile storage elastic modulus of the adhesive agent layer was too low, it was not possible to cut | disconnect this adhesive agent layer sufficiently in a cool expansion process.

X: Dicing Die Bond Film
10: dicing tape
11: description
11e: outer end
12: adhesive layer
12e: circumferential end
20, 21: adhesive layer
20e: outer end
W, 30A, 30C: semiconductor wafer
30B: semiconductor wafer partition
30a: split groove
30b: modified area
31: semiconductor chip

Claims (10)

Dicing tape which has a laminated structure containing a base material and an adhesive layer,
It is provided with the adhesive agent layer adhered so that peeling is possible to the said adhesive layer in the said dicing tape,
The said adhesive layer tension | strength at 25 degreeC measured on the conditions of an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a temperature increase rate of 10 degree-C / min with respect to the sample of adhesive agent layer of width 10mm and thickness 160micrometer, Storage modulus is 5 to 120 MPa, and
The said adhesive layer is tension | tensile_strength at -15 degreeC measured on the conditions of the initial chuck distance 10mm, the frequency 900Hz, the dynamic strain 0.005%, and the temperature increase rate of 5 degree-C / min with respect to the sample of the adhesive agent layer of width 5mm and thickness 80micrometer. Dicing die bond film whose storage modulus is 3000-6000 Mpa. The method of claim 1,
The outer peripheral edge part of the said adhesive layer is a dicing die bond film in the distance within 1000 micrometers from the outer peripheral edge part of the said adhesive layer in a film surface in-direction. The method of claim 1,
The dicing die bond film whose shear adhesive force in -15 degreeC with respect to the SUS plane in the said adhesive agent layer is 66 N / cm <^2> or more. The method of claim 2,
The dicing die bond film whose shear adhesive force in -15 degreeC with respect to the SUS plane in the said adhesive agent layer is 66 N / cm <^2> or more. The method of claim 1,
The pressure-sensitive adhesive layer is a radiation curable pressure-sensitive adhesive layer,
The dicing die bond film whose peeling force between the said adhesive layer and the said adhesive agent layer before radiation hardening in the T-type peeling test on the conditions of 23 degreeC and peeling speed 300mm / min is 0.5 N / 20mm or more. The method of claim 1,
The adhesive agent layer has a thickness of 7 to 30㎛, dicing die bond film. The method according to any one of claims 1 to 6,
The said adhesive agent layer is a dicing die bond film containing the polymer component of the glass transition temperature -10-3 degreeC even if it is a weight average molecular weight of 800000-2 million. The method of claim 7, wherein
The said polymer component is a dicing die bond film containing the structural unit derived from acrylonitrile. The method according to any one of claims 1 to 6,
The said adhesive agent layer contains a dicing die-bonding film in the ratio of 10-40 mass%. The method of claim 7, wherein
The said adhesive agent layer contains a dicing die-bonding film in the ratio of 10-40 mass%.

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