KR20180116752A - Dicing die bond film - Google Patents

Abstract

Provided is a dicing die bond film which is suitable for suppressing curling of a die bond film while being difficult to generate a trace, and is suitable for more efficient production. The dicing die bond film X of the present invention includes a dicing tape (10) and a die bond film (20). The dicing tape (10) includes a laminated structure comprising a base material (11) and an adhesive layer (12). The die bond film (20) is closely attached to the adhesive layer (12) of the dicing tape (10) to be peeled. The outer peripheral end portion (20e) of the die bond film (20) is located within 500 μm from the outer peripheral end portion (12e) of the adhesive layer (12).

Description

DICING DIE BOND FILM [0002]

The present invention relates to a dicing die-bonding film which can be used in the process of manufacturing a semiconductor device.

In the process of manufacturing a semiconductor device, a dicing die-bonding film may be used to obtain a semiconductor chip accompanied by an adhesive film of a size equivalent to a die bonding chip, that is, a semiconductor chip with a die bond film. The dicing die-bonding film has a size corresponding to the semiconductor wafer to be processed and has, for example, a dicing tape comprising a base and a pressure-sensitive adhesive layer and a die-bonding film adhered closely to the pressure-sensitive adhesive layer side.

As a method of obtaining a semiconductor chip with a die-bonding film by using a dicing die-bonding film, there is known a method of exposing a dicing tape in a dicing die-bonding film to a step of cutting the die-bonding film. In this method, first, a semiconductor wafer is bonded onto a die-bonding film of a dicing die-bonding film. This semiconductor wafer is processed, for example, so that it can be separated into a plurality of semiconductor chips after being cut together with the die bond film. Next, the dicing tape of the dicing die-bonding film is expanded so as to cut off the die-bond film so that a plurality of pieces of adhesive film each in close contact with the semiconductor chip are generated from the die-bonding film on the dicing tape. In the expanding process, a cutoff occurs in the semiconductor wafer on the die-bonding film at a position corresponding to the cut-off point in the die-bonding film, and the semiconductor wafer is repositioned into a plurality of semiconductor chips on the dicing die- . Then, after the cleaning process, for example, each semiconductor chip is pushed up by the pin member of the pick-up mechanism from the lower side of the dicing tape together with the die-bonding film of the size corresponding to the chip adhering thereto, Is picked up above. In this manner, a semiconductor chip with a die bond film is obtained. The semiconductor chip with the die-bonding film is fixed to an adherend such as a mounting substrate through die bonding film by die bonding. For example, a technique relating to a dicing die-bonding film used as described above is described in, for example, Patent Documents 1 to 3 below.

Japanese Patent Laid-Open No. 2007-2173 Japanese Patent Application Laid-Open No. 2010-177401 Japanese Patent Application Laid-Open No. 2012-23161

Fig. 15 is a schematic cross-sectional view of a conventional dicing die-bonding film Y. Fig. The dicing die-bonding film Y is composed of a dicing tape 60 and a die-bonding film 70. The dicing tape 60 has a laminated structure of a base material 61 and a pressure-sensitive adhesive layer 62 exhibiting adhesive force. The die-bonding film 70 is in close contact with the pressure-sensitive adhesive layer 62 due to the adhesive force of the pressure-sensitive adhesive layer 62. Such a dicing die-bonding film Y has a disk shape corresponding to a semiconductor wafer to be processed or a workpiece in the process of manufacturing a semiconductor device, and is used in the dicing process of the semiconductor wafer or the expanding process described above. 16, the semiconductor wafer 81 is bonded to the die-bonding film 70 and the ring frame 82 is adhered to the pressure-sensitive adhesive layer 62, as shown in Fig. 16, 81, and the above-described expansion process are performed.

The ring frame 82 is a member in which the carrying mechanism such as a carrying arm provided in the dicing apparatus mechanically abuts against the dicing die-bonding film Y when the workpiece is transported. The conventional dicing die-bonding film Y is designed such that the ring frame 82 can be fixed to the film by the adhesive force of the pressure-sensitive adhesive layer 62 of the dicing tape 60. That is, the conventional dicing die-bonding film Y has a design in which the ring frame fixing region is secured around the die-bonding film 70 in the pressure-sensitive adhesive layer 62 of the dicing tape 60. In such a design, the distance between the outer peripheral end portion 62e of the pressure-sensitive adhesive layer 62 and the outer peripheral end portion 70e of the die-bonding film 70 is about 10 to 30 mm.

The dicing die-bonding film may be provided in a form accompanied by a separator. 17 shows a case in which the above-described dicing die-bonding film Y carries the separator 83. Fig. The separator 83 is for covering the pressure-sensitive adhesive layer 62 of the dicing tape 60 and the die-bonding film 70. After the separator 83 is peeled from the dicing die-bonding film Y and the surface of the pressure-sensitive adhesive layer and the surface of the die-bonding film are exposed, the dicing die-bonding film Y is used. However, in peeling the separator 83 from the conventional dicing die-bonding film Y, the die bonding film 70 is partially peeled off from the dicing tape 60 together with the separator 83 in the peeling process That is, the die bonding film 70 may be curled. As shown in Figs. 15 and 16, the pressure-sensitive adhesive layer 62 of the dicing tape 60 having a different size in the in-plane direction of the film and the die bond film 70 are stepped, The dicing tape 60 to the pressure-sensitive adhesive layer 62 are deformed and the pressure-sensitive adhesive layer 62 and the die-bonding film 70 are flattened toward the separator 83 as shown in Fig. , And the separator 83 covers the one surface side of the dicing die-bonding film Y. In such a coated state by the separator 83, stress tends to concentrate between the separator side portion at the peripheral edge of the die bond film 70 and the separator 83, and locally strong adhesion . Therefore, in the process of separating the separator 83 from the dicing die-bonding film Y, the die-bonding film 70 can be partially peeled off from the dicing tape 60 together with the separator 83, It is thought that it is going to disappear.

In some cases, a plurality of dicing die-bonding films are provided in the form of a roll including it. Concretely, the separator 83 has a long shape and a plurality of dicing die-bonding films Y are disposed thereon, and the separator 83 is wound to form a roll. However, since the conventional dicing die-bonding film Y on the separator 83 has steps or shoulders Ya in itself, in the form of rolls, the die bonding film Y of the other dicing die-bonding film Y 70 may be formed on the die-bonding film 70 by pressing.

On the other hand, in the manufacturing process of the conventional dicing die-bonding film Y, a processing step (first processing step) for forming a dicing tape 60 having a predetermined size and shape, a die having a predetermined size and shape A processing step (second processing step) for forming the bond film 70 is required as a separate step. In the first processing step, for example, a laminate sheet having a laminate structure of a predetermined separator, a base layer to be formed of the base material 61, and a pressure-sensitive adhesive layer to be formed on the pressure- Processing is performed so that the cutting edge is pushed into the sieve from the side of the substrate layer to the separator. Thereby, a dicing tape 60 having a laminated structure of the pressure-sensitive adhesive layer 62 on the separator and the base material 61 is formed on the separator. In the second processing step, for example, for a laminated sheet body having a laminated structure of a predetermined separator and a material layer to be formed on the die-bonding film 70, a processing blade is provided from the side of the material layer to the separator So that the work is carried out. Thus, the die-bonding film 70 is formed on the separator. The dicing tape 60 and the die bond film 70 formed in such a separate process are then bonded together while being aligned.

The present invention has been devised on the basis of the above circumstances, and its object is to provide a dicing die-bonding film which is suitable for suppressing curling of a die-bonding film, .

The dicing die-bonding film provided by the present invention comprises a dicing tape and a die-bonding film. The dicing tape has a laminated structure including a substrate and a pressure-sensitive adhesive layer. The die-bonding film is in close contact with the pressure-sensitive adhesive layer of the dicing tape in a peelable manner. The outer peripheral end of the die-bonding film is within a distance of 500 占 퐉, preferably within 400 占 퐉, more preferably within 300 占 퐉 from the outer peripheral end of the pressure-sensitive adhesive layer in the film plane. That is, the outer circumferential end of the die-bonding film has an outer diameter of 500 m from the inner side to 500 m from the inner side, more preferably, from the inner side to the outer side of 400 m More preferably between the inner side 300 mu m and the outer side 300 mu m.

As described above, the dicing die-bonding film of the present invention is located at a distance of not more than 500 占 퐉 from the outer peripheral end of the pressure-sensitive adhesive layer of the dicing tape in the inward direction of the film surface. In such a constitution, the pressure-sensitive adhesive surface of the pressure-sensitive adhesive layer is substantially covered with the die-bonding film. In such a dicing die-bonding film, in the form involving a separator covering the side opposite to the base of the dicing tape, the surface of the die-bonding film forms the interface with the separator or the separator bonding surface. Therefore, the dicing die-bonding film according to the present invention is characterized in that, in the mode involving a separator covering the side opposite to the dicing tape substrate, the stress concentration of the die bonding film end described above with respect to the conventional dicing die- That is, the stress on the end portion of the die-bonding film due to the deformation of the dicing tape or the pressure-sensitive adhesive layer, which results in the pressure-sensitive adhesive layer and the die-bonding film thereon being flat on the side of the separator, Concentration is difficult to generate. Therefore, the present dicing die-bonding film is suitable for suppressing curling of the die-bonding film.

As described above, the dicing die-bonding film of the present invention is located at a distance of not more than 500 占 퐉 from the outer peripheral end of the pressure-sensitive adhesive layer of the dicing tape in the inward direction of the film surface. With such a configuration, it is possible to avoid or suppress the aforementioned formation of the shoulder with respect to the conventional dicing die-bonding film Y in the form in which the separator is bonded to the die-bonding film side of the present dicing die-bonding film . Therefore, in the case where a plurality of dicing die-bonding films are arranged on a long-shaped separator and the separator is wound to take the form of a roll, the above-described formation of the tracing marks on the dicing die- Is hard to occur with the present dicing die-bonding film.

As described above, the dicing die-bonding film of the present invention is located at a distance of not more than 500 占 퐉 from the outer peripheral end of the pressure-sensitive adhesive layer of the dicing tape in the inward direction of the film surface. In such a configuration, processing for forming one dicing tape having a laminated structure of a substrate and a pressure-sensitive adhesive layer and processing for forming one die-bonding film are collectively performed by processing such as punching . The dicing die-bonding film having such a structure is suitable for production efficiently from the viewpoints of the number of manufacturing steps and the manufacturing cost.

INDUSTRIAL APPLICABILITY As described above, the dicing die-bonding film provided by the present invention is suitable for suppressing curling of the die-bonding film, hard to trace, and suitable for efficient manufacture.

The outer peripheral end of the die-bonding film is located at a distance of preferably within 1000 占 퐉, more preferably within 900 占 퐉, and still more preferably within 800 占 퐉 from the outer peripheral edge of the substrate of the dicing tape in the in-plane direction of the film . That is, the outer peripheral end portion of the die-bonding film is formed so as to extend from the inner side of 1000 占 퐉 to the outer side 1000 占 퐉, more preferably from the inner side of 900 占 퐉 to the outer peripheral end of the dicing tape base, Between the outer side of 800 mu m and the outer side of 800 mu m, more preferably between the inner side of 800 mu m and the outer side of 800 mu m. This configuration according to the relationship between the outer peripheral edge of the dicing tape base material on which the pressure-sensitive adhesive layer is laminated and the outer peripheral edge of the die-bonding film on the pressure-sensitive adhesive layer is such that the dicing die- Contributes to avoiding the surface of the pressure-sensitive adhesive layer from being included in the large-separator adhering surface, and further contributes to suppressing the curling of the above-mentioned die-bonding film at the time of peeling the separator.

The die-bonding film is preferably in the range of 0.3 to 20 N / 10 mm, more preferably 0.4 to 20 N / 10 mm in the SUS plane in the peeling test under the conditions of a temperature of 23 DEG C, a peeling angle of 180 DEG and a tensile rate of 300 mm / 18 > / 10 mm, more preferably 0.5 to 15 N / 10 mm. In the dicing die-bonding film of the present invention, the ring frame is adhered to the die-bonding film, and the constitution relating to the adhesive force is suitable for ensuring the maintenance of the ring frame by the present dicing die-bonding film.

The thickness of the pressure-sensitive adhesive layer is preferably 30 占 퐉 or less, more preferably 10 占 퐉 or less, and further preferably 5 占 퐉 or less. In addition, the thickness of the die-bonding film is preferably 150 占 퐉 or less, more preferably 25 占 퐉 or less, and more preferably 10 占 퐉 or less. As the pressure-sensitive adhesive layer and the die-bonding film are both thinner, the separation distance between the outer peripheral edge of the pressure-sensitive adhesive layer in the in-plane direction of the film and the outer peripheral edge of the die-bonding film tends to be small depending on the processing method for collectively forming them. , The constitution relating to the thickness of the pressure-sensitive adhesive layer and the thickness of the die-bonding film is suitable for realizing a small separation distance between both outer peripheral end portions.

The value of the ratio of the thickness of the die-bonding film to the thickness of the pressure-sensitive adhesive layer is preferably 0.1 to 30, more preferably 0.3 to 10, and even more preferably 1 to 3. The smaller the value of the ratio of the thickness of the die bond film to the thickness of the pressure sensitive adhesive layer, the smaller the ratio of the outer peripheral edge of the pressure sensitive adhesive layer in the in-plane direction of the film to the die bond The distance between the outer circumferential end portions of the films tends to be small in practice and the configuration relating to the ratio of the thickness of the die bond film thickness to the thickness of the pressure sensitive adhesive layer is suitable for realizing a small spacing distance between both outer circumferential end portions.

The dicing die-bonding film preferably has a disc shape (12-inch wafer compatible type) having a diameter within a range of 345 to 380 mm, a disc shape (8-inch wafer compatible type) within a range of 245 to 280 mm, (18-inch wafer-compatible type), or a disk shape (6-inch wafer-compatible type) within a range of 195 to 230 mm. Such a configuration is suitable for using the present dicing die-bonding film in the processing process of wafers of these sizes.

The present dicing die-bonding film may be provided in a form having no so-called die-bonding film alignment mark. In the manufacturing process of the dicing die-bonding film of the conventional type, there is a case where the dicing tape or the pressure-sensitive adhesive layer significantly different in design dimension and the die bonding film are bonded together while alignment is performed have. The mark for alignment of the die-bonding film is a mark used for such alignment, for example, in each of the pressure-sensitive adhesive layer of the dicing tape and the die-bonding film. When a processing method for collectively forming the pressure-sensitive adhesive layer and the die-bonding film in the manufacturing process of the present dicing die-bonding film is employed, a step of bonding the two layers while aligning them is not required.

1 is a schematic cross-sectional view of a dicing die-bonding film according to an embodiment of the present invention.
Fig. 2 shows an example of a manufacturing method of the dicing die-bonding film shown in Fig.
Fig. 3 shows an example in which the dicing die-bonding film shown in Fig. 1 is accompanied by a separator.
Fig. 4 shows a part of the steps in the semiconductor device manufacturing method in which the dicing die-bonding film shown in Fig. 1 is used.
Fig. 5 shows a subsequent process of the process shown in Fig.
Fig. 6 shows a subsequent process of the process shown in Fig.
Fig. 7 shows a subsequent process of the process shown in Fig.
Fig. 8 shows a subsequent process of the process shown in Fig.
Fig. 9 shows a subsequent process of the process shown in Fig.
Fig. 10 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in Fig. 1 is used.
Fig. 11 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in Fig. 1 is used.
Fig. 12 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in Fig. 1 is used.
Fig. 13 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in Fig. 1 is used.
Fig. 14 is an enlarged cross-sectional schematic diagram of an observation point according to measurement of the outer peripheral end portion separation distance in the dicing die-bonding films of Examples 1 to 4. Fig.
15 is a schematic cross-sectional view of a conventional dicing die-bonding film.
Fig. 16 shows a usage form of the dicing die-bonding film shown in Fig.
Fig. 17 shows one supply form of the dicing die-bonding film shown in Fig.

1 is a cross-sectional schematic diagram of a dicing die-bonding film X according to an embodiment of the present invention. The dicing die-bonding film X has a laminated structure including the dicing tape 10 and the die-bonding film 20. The dicing tape 10 has a laminated structure including a base material 11 and a pressure-sensitive adhesive layer 12. The pressure-sensitive adhesive layer (12) has an adhesive surface (12a) on the side of the die-bonding film (20). The die-bonding film 20 is adhered to the pressure-sensitive adhesive layer 12 of the dicing tape 10 or its adhesive surface 12a in a peelable manner. The dicing die-bonding film X can be used in an expansion process such as the later stage in the process of obtaining a semiconductor chip with a die-bonding film in the production of a semiconductor device. The dicing die-bonding film X has a disk shape corresponding to the semiconductor wafer to be processed in the manufacturing process of the semiconductor device and has a diameter within a range of, for example, 345 to 380 mm (Corresponding to an 8-inch wafer), 495 to 530 mm (corresponding to an 18-inch wafer), or a range of 195 to 230 mm (corresponding to a 6-inch wafer) in the range of 245 to 280 mm have.

The outer peripheral end 20e of the die-bonding film 20 in the dicing die-bonding film X is located within the range of 500 占 퐉 or less from the outer peripheral end 12e of the pressure- , Preferably within 400 占 퐉, and more preferably within 300 占 퐉. That is, the outer peripheral end portion 20e of the die-bonding film 20 is formed so as to extend from the inner side 500 mu m to the outer side 500 mu m with respect to the outer peripheral end portion 12e of the pressure- More preferably between the inner side of 400 m and the outer side of 400 m, and more preferably between the inner side of 300 m and the outer side of 300 m. The outer peripheral end portion 20e of the die bonding film 20 is preferably extended from the outer peripheral end portion 11e of the base material 11 of the dicing tape 10 in the film surface in- Is within a range of 1000 占 퐉, more preferably within 900 占 퐉, and more preferably within 800 占 퐉. That is, the outer peripheral end 20e of the die-bonding film 20 is formed so as to extend from the inner side of 1000 mu m to the outer side of 1000 mu m with respect to the outer peripheral end 11e of the base material 11 in the in- More preferably between the inner side of 900 mu m and the outer side of 900 mu m, and more preferably between the inner side of 800 mu m and the outer side of 800 mu m.

The thickness of the pressure-sensitive adhesive layer 12 is preferably 30 占 퐉 or less, more preferably 10 占 퐉 or less, and more preferably 5 占 퐉 or less. The thickness of the pressure-sensitive adhesive layer 12 is, for example, 1 占 퐉 or more. In addition, the thickness of the die-bonding film 20 is preferably 150 占 퐉 or less, more preferably 25 占 퐉 or less, and more preferably 10 占 퐉 or less. The thickness of the die-bonding film 20 is, for example, 1 占 퐉 or more. The ratio of the thickness of the die-bonding film 20 to the thickness of the pressure-sensitive adhesive layer 12 is preferably 0.1 to 30, more preferably 0.3 to 10, and still more preferably 1 to 3.

The base material 11 of the dicing tape 10 is an element which functions as a support in the dicing tape 10 to the dicing die-bonding film X. [ As the substrate 11, for example, a plastic substrate (particularly, a plastic film) can be suitably used. Examples of the constituent material of the plastic substrate include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, Polyamide, polyphenyl sulfide, aramid, fluororesin, cellulose resin and silicone resin. Examples of the polyolefin include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymerized polypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene- (Meth) acrylic acid ester copolymer, an ethylene- (meth) acrylic acid ester copolymer, an ethylene-butene copolymer, and an ethylene-hexene copolymer. Examples of the polyester include polyethylene terephthalate (PET), polyethylene naphthalate and polybutylene terephthalate (PBT). The substrate 11 may be made of one kind of material or two or more kinds of materials. The base material 11 may have a single-layer structure or a multi-layer structure. When the pressure-sensitive adhesive layer 12 on the base material 11 is ultraviolet curable as described later, the base material 11 preferably has ultraviolet transmittance. When the base material 11 is made of a plastic film, it may be a non-stretched film, a monoaxially stretched film, or a biaxially stretched film.

When the dicing tape 10 to the substrate 11 are shrunk by, for example, partial heating at the time of using the dicing die-bonding film X, the substrate 11 preferably has heat shrinkability. When the base material 11 is made of a plastic film, it is preferable that the base material 11 is a biaxially oriented film in order to achieve isotropic heat shrinkability with respect to the dicing tape 10 to the base material 11. [ The dicing tape 10 to the substrate 11 preferably have a heat shrinkage ratio of 2 to 30%, more preferably 2 to 25% by a heat treatment test performed under the conditions of a heating temperature of 100 占 폚 and a heat treatment time of 60 seconds %, More preferably 3 to 20%, and still more preferably 5 to 20%. The heat shrinkage rate means at least one of the so-called heat shrinkage rate in the MD direction and the so-called heat shrinkage rate in the TD direction.

The surface of the base material 11 on the side of the pressure-sensitive adhesive layer 12 may be subjected to physical treatment, chemical treatment, or priming treatment for enhancing adhesion with the pressure-sensitive adhesive layer 12. Examples of the physical treatment include corona treatment, plasma treatment, sand matte treatment, ozone exposure treatment, flame exposure treatment, high-pressure electric exposure treatment, and ionizing radiation treatment. The chemical treatment includes, for example, chromic acid treatment.

The thickness of the base material 11 is preferably 40 占 퐉 or more, more preferably 40 占 퐉 or more from the viewpoint of securing the strength for the base material 11 to function as a support in the dicing tape 10 to the dicing die- Is at least 50 탆, more preferably at least 55 탆, and even more preferably at least 60 탆. From the viewpoint of realizing suitable flexibility in the dicing tape 10 to the dicing die-bonding film X, the thickness of the base material 11 is preferably 200 占 퐉 or less, more preferably 180 占 퐉 or less Preferably 150 mu m or less.

The pressure-sensitive adhesive layer 12 of the dicing tape 10 contains a pressure-sensitive adhesive. The pressure-sensitive adhesive may be a pressure-sensitive adhesive (pressure-sensitive adhesive force-reducing adhesive) capable of intentionally reducing the pressure-sensitive adhesive force by external action such as irradiation with radiation or heating, and may be a pressure- Non-reducing type pressure-sensitive adhesive), and can be appropriately selected in accordance with the discretization method and condition of the semiconductor chip to be separated using the dicing die-bonding film X.

In the case where the pressure-sensitive adhesive force-reduction type pressure-sensitive adhesive is used as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, the pressure-sensitive adhesive layer 12 exhibits a relatively high adhesive force and a relatively low pressure- Can be distinguished from each other. For example, when the die-bonding film 20 is bonded to the pressure-sensitive adhesive layer 12 of the dicing tape 10 in the process of manufacturing the dicing die-bonding film X, or when the dicing die- It is possible to suppress or prevent the adherence or peeling of the adherend such as the die-bonding film 20 from the pressure-sensitive adhesive layer 12 by using a state in which the pressure-sensitive adhesive layer 12 exhibits a relatively high adhesive force On the other hand, in the pickup process for picking up the semiconductor chip with die-bonding film from the dicing tape 10 of the dicing die-bonding film X, the adhesive strength of the pressure-sensitive adhesive layer 12 is reduced, It is possible to appropriately pick up the semiconductor chip with die-bonding film.

Examples of such a pressure sensitive adhesives with reduced pressure include radiation curable pressure sensitive adhesives (radiation curable pressure sensitive adhesives) and heated foamed pressure sensitive adhesives. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of pressure-sensitive adhesive force-reducing adhesive may be used, or two or more types of pressure-sensitive adhesive force-reducing pressure-sensitive adhesive may be used. Further, the entirety of the pressure-sensitive adhesive layer 12 may be formed of an adhesive force-reducing type pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of an adhesive pressure- For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entirety of the pressure-sensitive adhesive layer 12 may be formed of the pressure-sensitive adhesive force-reducing type pressure-sensitive adhesive, And another portion may be formed of an adhesive force reducing type pressure-sensitive adhesive. In the case where the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers constituting the laminated structure may be formed of an adhesive force-reducing type pressure-sensitive adhesive, and a part of the laminate structure may be formed of an adhesive pressure-

As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, a pressure-sensitive adhesive of the type which is cured by irradiation with an electron beam, ultraviolet ray,? Ray,? Ray,? Or X ray can be used, (Ultraviolet curing type pressure-sensitive adhesive) can be suitably used.

As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, a pressure-sensitive adhesive containing a base polymer such as an acrylic pressure-sensitive acrylic polymer and a radically polymerizable monomer component or oligomer component having a functional group such as a radiation- , And addition-type radiation-curable pressure-sensitive adhesives.

The acrylic polymer preferably contains a monomer unit derived from an acrylate ester and / or a methacrylate ester as a main monomer unit in the mass ratio. Hereinafter, " (meth) acrylic " denotes " acrylic " and / or " methacrylic ".

Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer include (meth) acrylic acid ester containing a hydrocarbon group such as alkyl methacrylate, (meth) acrylic acid cycloalkyl ester and (meth) . Examples of the (meth) acrylic acid alkyl ester include methyl esters, ethyl esters, isopropyl esters, butyl esters, isobutyl esters, s-butyl esters, t-butyl esters, pentyl esters, iso Isohexyl ester, isooctyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (ie, lauryl ester), tridecyl ester, Tetradecyl ester, hexadecyl ester, octadecyl ester and eicosyl ester. (Meth) acrylic acid cycloalkyl esters include, for example, cyclopentyl esters and cyclohexyl esters of (meth) acrylic acid. Examples of (meth) acrylic acid aryl esters include phenyl (meth) acrylate and benzyl (meth) acrylate. As the (meth) acrylic acid ester as the main monomer for the acrylic polymer, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. (Meth) acrylic acid ester as a main monomer in the overall monomer component for forming an acrylic polymer is preferably in a range of from 0.1 to 10 parts by weight, By mass is not less than 40% by mass, and more preferably not less than 60% by mass.

The acrylic polymer may contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid ester in order to modify its cohesive strength, heat resistance, and the like. Examples of such monomer components include monomers containing a carboxyl group, an acid anhydride monomer, a hydroxyl group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide and acrylonitrile . Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid. Examples of the acid anhydride monomers include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include (meth) acrylic acid 2-hydroxyethyl, (meth) acrylate 2-hydroxypropyl, (meth) acrylate 4-hydroxybutyl, (meth) (Meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methylglycidyl (meth) acrylate. (Meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acrylamide sulfonic acid, And acryloyloxynaphthalenesulfonic acid. As the phosphate group-containing monomer, for example, 2-hydroxyethyl acryloyl phosphate can be mentioned. As the other monomer for the acrylic polymer, one kind of monomer may be used, or two or more kinds of monomers may be used. (Meth) acrylic acid ester, the proportion of the other monomer component in the total monomer component for forming the acrylic polymer is preferably 60 mass% or more, more preferably 60 mass% or less, Or less, more preferably 40 mass% or less.

The acrylic polymer may contain a monomer unit derived from a multifunctional monomer capable of copolymerizing with a monomer component such as (meth) acrylic acid ester as a main monomer in order to form a crosslinked structure in the polymer backbone. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (Meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, pentaerythritol tri (meth) acrylate, Poly (meth) acrylate, poly (meth) acrylate and urethane (meth) acrylate. As the polyfunctional monomer for the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. The proportion of the polyfunctional monomer in the total monomer component for forming the acrylic polymer is preferably 40% by mass or less, more preferably 40% by mass or less, for appropriately expressing the basic properties such as adhesiveness by the (meth) acrylate ester in the pressure- Or less, more preferably 30 mass% or less.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming it. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of the high degree of cleanliness in the semiconductor device manufacturing method using the dicing tape 10 to the dicing die bonding film X, the dicing tape 10 to the dicing die- The number average molecular weight of the acrylic polymer is preferably 100,000 or more, and more preferably 200,000 to 3,000,000.

The pressure-sensitive adhesive layer (12) and the pressure-sensitive adhesive for forming it may contain, for example, an external crosslinking agent to increase the number average molecular weight of the base polymer such as an acrylic polymer. Examples of the external crosslinking agent for reacting with the base polymer such as an acrylic polymer to form a crosslinked structure include a polyisocyanate compound, an epoxy compound, a polyol compound (such as a polyphenol compound), an aziridine compound, and a melamine crosslinking agent. The content of the external crosslinking agent in the pressure-sensitive adhesive layer (12) and the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer (12) is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the base polymer.

Examples of the radiation polymerizable monomer component for forming the radiation curable pressure sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra Acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation-polymerizable oligomer component for forming the radiation-curable pressure-sensitive adhesive include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, It is appropriate. The total content of the radiation-polymerizable monomer component and the oligomer component in the radiation-curing pressure-sensitive adhesive is determined within a range that can adequately lower the adhesive force of the pressure-sensitive adhesive layer 12 to be formed. For 100 parts by mass of the base polymer such as an acrylic polymer For example, 5 to 500 parts by mass, and preferably 40 to 150 parts by mass. As the addition type radiation curable pressure sensitive adhesive, for example, those disclosed in Japanese Patent Application Laid-open No. 60-196956 may be used.

As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, an internal radiation-curable pressure-sensitive adhesive containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the polymer side chain, An adhesive may also be used. Such an intrinsic type radiation-curing pressure-sensitive adhesive is suitable for suppressing unintended change of the pressure-sensitive adhesive property due to movement of a low molecular weight component in the pressure-sensitive adhesive layer 12 to be formed over time.

As the base polymer contained in the intrinsic type radiation-curable pressure-sensitive adhesive, it is preferable that the acrylic polymer has a basic skeleton. As the acrylic polymer forming such basic skeleton, the above-mentioned acrylic polymer can be employed. As a method for introducing a radiation-polymerizable carbon-carbon double bond to an acrylic polymer, for example, a raw monomer containing a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer, (Second functional group) capable of generating a reaction between the carbon-carbon double bond and the radiation-polymerizable carbon-carbon double bond, Followed by reaction or addition reaction.

Examples of the combination of the first functional group and the second functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, an isocyanate group and a hydroxy group. Among these combinations, a combination of a hydroxy group and an isocyanate group or a combination of an isocyanate group and a hydroxy group is suitable from the viewpoint of easiness in tracking the reaction. The production of a polymer having an isocyanate group having a high reactivity is highly technically difficult. From the viewpoint of preparation or availability of an acrylic polymer, it is preferable that the first functional group on the acrylic polymer side is a hydroxy group and the second functional group is an isocyanate group The case is more appropriate. In this case, examples of the isocyanate compound containing the radiation-polymerizable carbon-carbon double bond and the second functionalized isocyanate group include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, and m- alpha, alpha -dimethylbenzyl isocyanate. As the acrylic polymer carrying the first functional group, it is preferable to include a monomer unit derived from the hydroxy group-containing monomer, and examples thereof include 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl It is also preferable to include a monomer unit derived from an ether compound such as an ether.

The radiation-curing pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator. As the photopolymerization initiator, for example, an? -Ketol compound, an acetophenone compound, a benzoin ether compound, a ketal compound, an aromatic sulfonyl chloride compound, a photoactive oxime compound, a benzophenone compound, Compounds, camphorquinones, halogenated ketones, acylphosphine oxides, and acylphosphonates. Examples of the? -ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone,? -hydroxy- ?,? '- dimethylacetophenone, 2-hydroxypropiophenone, and 1-hydroxycyclohexyl phenyl ketone. Examples of the acetophenone compound include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio) -Phenyl] -2-morpholinopropane-1. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. As the ketel-based compound, for example, benzyldimethylketal can be given. The aromatic sulfonyl chloride-based compound includes, for example, 2-naphthalenesulfonyl chloride. As the optically active oxime compound, for example, 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime can be mentioned. Examples of the benzophenone-based compound include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of the thioxanthone compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4- 2,4-diethyl thioxanthone, and 2,4-diisopropyl thioxanthone. The content of the photopolymerization initiator in the radiation-curing pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer such as acrylic polymer.

The heat-expandable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive containing components (foaming agent, thermally expandable microspheres, etc.) which foam or expand by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents As the thermally expandable microspheres, for example, microspheres having a constitution in which a material which is easily gasified by heating to expand is enclosed in the shell. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, and azide. Examples of the organic foaming agent include azo-based compounds such as azobisisobutyronitrile, azodicarbonamide, barium azodicarboxylate, and the like, fluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane, Hydrazine compounds such as toluenesulfonyl hydrazide, diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis (benzenesulfonylhydrazide) and allybis (sulfonylhydrazide), p -Carbodiimide compounds such as tolylene sulfonyl semicarbazide and 4,4'-oxybis (benzenesulfonyl semicarbazide), 5-morpholyl-1,2,3,4-thiatriazole And N-nitroso compounds such as N, N'-dinitrosopentamethylenetetramine and N, N'-dimethyl-N, N'-dinitrosoterephthalamide. Examples of the material that can be easily gasified and expanded by heating to form the thermo-expansive microsphere as described above include isobutane, propane, and pentane. A thermally expandable microsphere can be manufactured by enclosing a material which easily gasifies and expands by heating in an envelope forming material by a coacervation method or an interfacial polymerization method. As the sheathing material, a material exhibiting heat melting property or a material capable of being ruptured by thermal expansion action of the enclosed material can be used. Such materials include, for example, vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride and polysulfone.

Examples of the above-mentioned adhesive force reducing type pressure-sensitive adhesive include, for example, a pressure-sensitive adhesive in the form of a radiation-curing pressure-sensitive adhesive previously cured by irradiation with radiation, a pressure-sensitive adhesive, and the like. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of pressure-sensitive adhesive force-reducing type pressure-sensitive adhesive may be used, or two or more types of pressure-sensitive adhesive force-reducing type pressure-sensitive adhesives may be used. The entirety of the pressure-sensitive adhesive layer 12 may be formed of an adhesive force-reducing pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of an adhesive pressure- For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of an adhesive force-reducing pressure-sensitive adhesive, and a predetermined portion of the pressure-sensitive adhesive layer 12 may be a pressure- And the other portion may be formed of an adhesive force reducing type adhesive. When the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers constituting the laminated structure may be formed of an adhesive force reducing type pressure-sensitive adhesive, and some of the laminated structures may be formed of an adhesive force reducing type pressure-sensitive adhesive.

The pressure-sensitive adhesive (radiation-curable pressure-sensitive adhesive completed by irradiation with radiation) in which the radiation-curable pressure-sensitive adhesive is cured by radiation irradiation in advance exhibits adhesiveness due to the contained polymer component even if the adhesive force is reduced by irradiation of radiation. So that it is possible to exhibit the minimum necessary adhesive force to the dicing tape pressure-sensitive adhesive layer. In the present embodiment, when the radiation-cured radiation-curable pressure-sensitive adhesive is used, the entirety of the pressure-sensitive adhesive layer 12 may be formed by a radiation-cured radiation curable pressure-sensitive adhesive in the surface enlarging direction of the pressure- A part of the radiation-curable pressure-sensitive adhesive layer 12 may be formed of a radiation-cured radiation-curable pressure-sensitive adhesive, and the other part may be formed of a radiation curable pressure-

The dicing die-bonding film X containing at least a part of the pressure-sensitive adhesive layer 12 of the radiation-curable pressure-sensitive adhesive of radiation exposure can be produced, for example, by the following procedure. First, a pressure-sensitive adhesive layer (radiation-curable pressure-sensitive adhesive layer) made of a radiation-curing pressure-sensitive adhesive is formed on the base material 11 of the dicing tape 10. Subsequently, a predetermined part or all of the radiation-curing pressure-sensitive adhesive layer is irradiated with radiation to form a pressure-sensitive adhesive layer containing at least a part of the radiation-curing pressure-sensitive adhesive to which radiation has been irradiated. Subsequently, an adhesive layer to be a die-bonding film 20 described later is formed on the pressure-sensitive adhesive layer. Thereafter, the pressure-sensitive adhesive layer 12 and the die-bonding film 20 are formed together with the pressure-sensitive adhesive layer and the adhesive layer by, for example, a batch processing method as described later. The dicing die-bonding film X containing at least a part of the pressure-sensitive adhesive layer 12 of the radiation-curable pressure-sensitive adhesive of radiation exposure may be manufactured through the following process. First, a pressure-sensitive adhesive layer (radiation-curable pressure-sensitive adhesive layer) made of a radiation-curing pressure-sensitive adhesive is formed on the base material 11 of the dicing tape 10. Then, an adhesive layer to be a die-bonding film 20 to be described later is formed on the radiation-curing pressure-sensitive adhesive layer. Then, a predetermined part or the entirety of the radiation-curing pressure-sensitive adhesive layer is irradiated with radiation to form a pressure-sensitive adhesive layer containing at least a part of the radiation-curing pressure-sensitive adhesive subjected to irradiation with radiation. Thereafter, the pressure-sensitive adhesive layer 12 and the die-bonding film 20 are formed together with the pressure-sensitive adhesive layer and the adhesive layer by, for example, a batch processing method as described later.

On the other hand, as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, known pressure-sensitive adhesives can be used, and acrylic pressure-sensitive adhesives or rubber pressure-sensitive adhesives having an acrylic polymer as a base polymer can be suitably used. When the pressure-sensitive adhesive layer 12 contains an acrylic pressure-sensitive adhesive as a pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic pressure-sensitive adhesive is preferably a monomer unit derived from a (meth) . As such an acryl-based polymer, for example, the above-mentioned acrylic polymer can be mentioned in relation to the radiation-curable pressure-sensitive adhesive.

The pressure-sensitive adhesive layer (12) and the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer (12) may contain a crosslinking accelerator, a tackifier, an antioxidant, a coloring agent such as a pigment or a dye, The colorant may be a compound that undergoes coloration upon irradiation with radiation. Such compounds include, for example, leuco dyes.

The die-bonding film 20 of the dicing die-bonding film X has a structure capable of functioning as an adhesive exhibiting thermosetting property for die bonding. In the present embodiment, the adhesive for forming the die-bonding film 20 may have a composition including a thermosetting resin and a thermoplastic resin as a binder component, and may have a thermosetting functional group capable of reacting with the curing agent to cause bonding And a thermoplastic resin that is thermally stable. When the adhesive for forming the die-bonding film 20 has a composition including a thermoplastic resin accompanied by a thermosetting functional group, the pressure-sensitive adhesive need not contain a thermosetting resin (such as an epoxy resin). The die-bonding film 20 may have a single-layer structure or a multi-layer structure.

When the die-bonding film 20 contains a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, Polyimide resin. In forming the die-bonding film 20, one type of thermosetting resin may be used, or two or more kinds of thermosetting resins may be used. An epoxy resin is preferable as the thermosetting resin contained in the die bond film 20 because the content of ionic impurities or the like which may cause corrosion of the semiconductor chip to be die bonded tends to be small. As the curing agent of the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include epoxy resins such as bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolak type, And epoxy resins of the orthocresol novolak type, the trishydroxyphenylmethane type, the tetraphenylol ethane type, the hydantoin type, the trisglycidyl isocyanurate type and the glycidyl amine type. The novolak type epoxy resin, the biphenyl type epoxy resin, the trishydroxyphenyl methane type epoxy resin and the tetraphenylol ethane type epoxy resin are excellent in reactivity with the phenol resin as the curing agent and have excellent heat resistance, Is preferably used as the epoxy resin contained in the film (20).

Examples of the phenol resin which can act as a curing agent of the epoxy resin include novolak type phenol resins, resol type phenol resins, and polyoxystyrenes such as polyparaxyxstyrene. Examples of the novolak-type phenol resin include phenol novolac resins, phenol aralkyl resins, cresol novolak resins, tert-butylphenol novolac resins and nonylphenol novolac resins. As the phenol resin which can act as a curing agent for the epoxy resin, one type of phenol resin may be used, or two or more kinds of phenol resins may be used. Phenol novolak resin or phenol aralkyl resin tends to improve connection reliability of the adhesive when it is used as a curing agent of an epoxy resin as an adhesive for die bonding. Therefore, the epoxy resin Of the curing agent.

From the viewpoint of sufficiently accelerating the curing reaction between the epoxy resin and the phenolic resin in the die-bonding film 20, the phenolic resin preferably has a hydroxyl group in the phenolic resin per equivalent of the epoxy group in the epoxy resin component, preferably 0.5 to 2.0 equivalents , More preferably 0.8 to 1.2 equivalents.

Examples of the thermoplastic resin included in the die-bonding film 20 include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene Polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamide-imide resins, And a fluororesin. In forming the die-bonding film 20, one type of thermoplastic resin may be used, or two or more kinds of thermoplastic resins may be used. The thermoplastic resin contained in the die-bonding film 20 is preferably an acrylic resin because it is easy to ensure bonding reliability by the die-bonding film 20 because it has few ionic impurities and high heat resistance.

The acrylic resin contained as the thermoplastic resin in the die-bonding film 20 preferably contains a monomer unit derived from (meth) acrylic acid ester as a main monomer unit in the mass ratio. As such a (meth) acrylic acid ester, for example, a (meth) acrylate ester similar to that described above with respect to an acrylic polymer as a component of the radiation curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be used. The acrylic resin contained as the thermoplastic resin in the die-bonding film 20 may contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid ester. Examples of such other monomer components include functional group-containing monomers such as carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide and acrylonitrile Specific examples of the other monomers copolymerizable with the (meth) acrylic acid ester with respect to the acrylic polymer as a component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 include the same Can be used. The acrylic resin contained in the die-bonding film 20 is preferably a (meth) acrylic acid ester (particularly, a (meth) acrylate having an alkyl group of 4 or less in number) from the viewpoint of realizing a high cohesive force in the die- Acrylic acid alkyl ester), a carboxyl group-containing monomer, a nitrogen atom-containing monomer and a polyfunctional monomer (particularly a polyglycidyl-based polyfunctional monomer), more preferably a copolymer of ethyl acrylate, butyl acrylate, , Acrylonitrile, and polyglycidyl (meth) acrylate.

The content ratio of the thermosetting resin in the die-bonding film 20 is preferably 5 to 60 mass%, more preferably 10 (mass%) to 60 mass% from the viewpoint of appropriately expressing the function of the thermosetting adhesive in the die- To 50% by mass.

When the die-bonding film 20 contains a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming the thermosetting functional group-containing acrylic resin preferably includes a monomer unit derived from a (meth) acrylic acid ester as a main monomer unit in a mass ratio. As such a (meth) acrylic acid ester, for example, a (meth) acrylic acid ester similar to that described above with respect to the acrylic polymer as a component of the radiation curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be used. On the other hand, examples of the thermosetting functional group for forming the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxyl group, and an isocyanate group. Among them, a glycidyl group and a carboxyl group can be suitably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be suitably used. As the curing agent of the acrylic resin containing a thermosetting functional group, for example, the one described above may be used as an external crosslinking agent which may be a component of a radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer (12). When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenolic compound can be suitably used as a curing agent. For example, the above-mentioned various phenol resins can be used.

In order to realize a certain degree of degree of crosslinking with respect to the die-bonding film 20 before being cured for die bonding, for example, it is preferable to react with the functional group at the molecular chain terminal of the above-mentioned resin contained in the die- It is preferable to blend a polyfunctional compound which can be used as a crosslinking agent in a resin composition for forming a die bond film. Such a configuration is suitable for improving the adhesive property at a high temperature to the die-bonding film 20 and for improving the heat resistance. As such a crosslinking agent, for example, a polyisocyanate compound can be mentioned. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylenediisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyhydric alcohol and diisocyanate. The content of the crosslinking agent in the resin composition for forming a die-bonding film is preferably from the viewpoint of improving the cohesion of the formed die-bonding film 20 with respect to 100 parts by mass of the resin having the functional group capable of reacting with the crosslinking agent Is preferably not less than 0.05 part by mass, and is preferably not more than 7 parts by mass from the viewpoint of improving the adhesion of the die-bonding film 20 to be formed. As the crosslinking agent in the die-bonding film 20, another polyfunctional compound such as epoxy resin may be used in combination with the polyisocyanate compound.

The die-bonding film 20 may contain a filler. The physical properties such as the conductivity, thermal conductivity and elastic modulus of the die-bonding film 20 can be adjusted by the combination of the filler with the die-bonding film 20. Examples of the filler include an inorganic filler and an organic filler, and particularly, an inorganic filler is preferable. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, , Aluminum, gold, silver, copper, and nickel, alloys, amorphous carbon black, and graphite. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. As the filler in the die-bonding film 20, one type of filler may be used, or two or more kinds of fillers may be used.

In the case where the die-bonding film 20 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 mu m, more preferably 0.005 to 1 mu m. The structure in which the average particle diameter of the filler is 0.005 탆 or more is suitable for realizing high wettability and adhesion to an adherend such as a semiconductor wafer in the die-bonding film 20. The structure in which the average particle diameter of the filler is not more than 10 mu m is suitable for enjoying a sufficient filler adding effect in the die-bonding film 20 and ensuring heat resistance. The average particle diameter of the filler can be obtained, for example, by using a particle size distribution meter (trade name " LA-910 " manufactured by Horiba Seisakusho Co., Ltd.) of a photometric method.

The die-bonding film 20 may contain other components as required. Examples of other components include flame retardants, silane coupling agents, and ion trap agents. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the silane coupling agent include? - (3,4-epoxycyclohexyl) ethyltrimethoxysilane,? -Glycidoxypropyltrimethoxysilane, and? -Glycidoxypropylmethyldiethoxysilane. have. Examples of the ion trap agent include hydrotalcites, bismuth hydroxide, hydrous antimony oxides (e.g., " IXE-300 ", manufactured by Toagosei Co., Ltd.), zirconium phosphate having a specific structure (E.g., " IXE-100 " manufactured by Kyowa Chemical Industry Co., Ltd.), magnesium silicate (for example, " Kyowade 600 ", manufactured by Kyowa Chemical Industry Co., Kyo Ward 700 "). A compound capable of forming a complex between metal ions can also be used as an ion trap agent. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridyl-based compounds. Of these, triazole-based compounds are preferable from the viewpoint of the stability of the complex formed with metal ions. Examples of such triazole compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-butylphenyl) (2-benzotriazolyl) -4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1- Dihydroxypropyl) benzotriazole, 1- (1,2-dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4- Benzyltriazole, octyl-3- [3-t-butyl (2-hydroxyphenyl) (5-chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2-ethylhexyl-3- [ 2- (2H-benzotriazol-2-yl) -6- (3-t-butyl-4-hydroxy- (1-methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazol- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) Methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- Butylphenyl) -5-chloro-benzotriazole, 2- [2-hydroxy-3,5-di (1,1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'- 4- (1,1,3,3-tetramethylbutyl) phenol], (2- [2-hydroxy-3,5-bis (?,? (Dimethylbenzyl) phenyl] -2H-benzotriazole, and methyl-3- [3- (2H-benzotriazol-2-yl) -5-t- butyl-4-hydroxyphenyl] propionate Further, a quinoline compound, a hydroxy anthra Hydroxyl group-containing compounds, such as certain non-compound, the polyphenol compound also can be used as the ion trap. Specific examples of such hydroxyl group-containing compounds include 1,2-benzene diol, alizarin, anthrulphine, tannin, gallic acid, methyl gallate, pyrogallol and the like. As the other components as described above, one kind of component may be used, or two or more kinds of components may be used.

The die-bonding film 20 preferably has a thickness of 0.3 to 20 N / 10 mm, more preferably 0.3 to 20 N / 10 mm, more preferably 0.3 to 20 N / 10 mm, in terms of the SUS plane in a peeling test under the conditions of a temperature of 23 DEG C, a peeling angle of 180 DEG and a tensile rate of 300 mm / Shows a 180 DEG peel adhesion force of 0.4 to 18 N / 10 mm, more preferably 0.5 to 15 N / 10 mm. In the dicing die-bonding film X, the ring frame is adhered to the die-bonding film 20, and the constitution relating to the adhesive force is suitable for ensuring the maintenance of the ring frame by the dicing die-bonding film X.

The dicing die-bonding film X having the above-described structure can be produced, for example, as follows.

As shown in Fig. 2A, the sheet body to be processed by the dicing tape 10 of the dicing die-bonding film X is formed on the base 11 'to be processed by the base material 11 , And a pressure-sensitive adhesive layer 12 'which is formed by a pressure-sensitive adhesive layer (12). The base material 11 'made of resin can be produced by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a co-extrusion method, and a dry lamination method. The film or substrate 11 'after the film formation is subjected to a predetermined surface treatment if necessary. In forming the pressure-sensitive adhesive layer 12 ', for example, after preparing a pressure-sensitive adhesive solution for forming a pressure-sensitive adhesive layer, the pressure-sensitive adhesive solution is applied on the base 11' or a predetermined separator to form a pressure-sensitive adhesive coating film. Examples of the application method of the pressure sensitive adhesive solution include roll coating, screen coating, and gravure coating. Subsequently, in the pressure-sensitive adhesive coating film, a crosslinking reaction is caused by heating, if necessary, and desolvation is carried out if necessary. The heating temperature is, for example, 80 to 150 占 폚, and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 12 'is formed on the separator, the pressure-sensitive adhesive layer 12' accompanying the separator is bonded to the substrate 11 ', and then the separator is peeled off. As described above, the sheet chain tape 10 'to be formed on the dicing tape 10 can be produced.

On the other hand, as shown in Fig. 2 (b), an adhesive film 20 'to be formed by die-bonding film 20 is produced. In the production of the adhesive film 20 ', after preparing an adhesive composition for forming a die-bonding film, the adhesive composition is first applied onto the separator S to form an adhesive composition layer. Examples of the separator S include a plastic film or paper surface-coated with a releasing agent such as a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a fluorine-based releasing agent or a long-chain alkyl acrylate-based releasing agent. Examples of the application method of the adhesive composition layer include roll coating, screen coating, and gravure coating. Subsequently, in the adhesive composition layer, a crosslinking reaction is caused by heating, if necessary, and desolvation is carried out if necessary. The heating temperature is, for example, 70 to 160 占 폚, and the heating time is, for example, 1 to 5 minutes. As described above, the adhesive film 20 'carrying the separator S can be manufactured.

In the production of the dicing die-bonding film X, next, as shown in Fig. 2C, the pressure-sensitive adhesive layer 12 'side of the tape 10' and the adhesive film 20 ' . Thereby, a laminated sheet body having a laminated structure including the separator S, the adhesive film 20 ', the pressure-sensitive adhesive layer 12' and the substrate 11 'is produced. In this step, the bonding temperature is, for example, 30 to 50 占 폚, preferably 35 to 45 占 폚. The bonding pressure (line pressure) is, for example, 0.1 to 20 kgf / cm, preferably 1 to 10 kgf / cm. In the case where the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer as described above, when irradiating the pressure-sensitive adhesive layer 12 'with radiation such as ultraviolet rays after bonding of the adhesive film 20' Is irradiated from the side of the substrate 11 'to the pressure-sensitive adhesive layer 12', and the irradiation amount thereof is, for example, 50 to 500 mJ / cm2, preferably 100 to 300 mJ / cm2.

Next, as shown in Fig. 2 (d), the laminated sheet body is subjected to a process of pushing in the cutting edge from the side of the substrate 11 'to the separator S (see (d ), A cut portion is schematically shown by a thick line). For example, a rotating roll with a cutting edge (a cutting blade with a cutting edge), which is disposed rotatably around an axis orthogonal to the direction F while moving the laminated sheet body in the one direction F at a constant speed, Is abutted against the base 11 'side of the laminated sheet body with a predetermined pressing force. Thereby, the dicing tape 10 (base material 11, pressure-sensitive adhesive layer 12) and the die-bonding film 20 are collectively processed and the dicing die-bonding film X is formed on the separator S. Thereafter, as shown in Fig. 2 (e), the material layered portion around the dicing die-bonding film X is removed from the separator S.

Thus, the dicing die-bonding film X can be produced. The separator S is peeled from the film when the dicing die-bonding film X is used.

The dicing die-bonding film X is formed so that the outer peripheral end 20e of the die-bonding film 20 is positioned at the outer peripheral end 1220e of the pressure-sensitive adhesive layer 12 of the dicing tape 10 in the film- ) Within 500 mu m. In such a constitution, the adhesive surface 12a of the pressure-sensitive adhesive layer 12 is substantially covered by the die-bonding film 20. In the dicing die-bonding film X, the dicing die-bonding film X is provided with a separator that covers the side opposite to the base 11 of the dicing tape 10, for example, a form involving the separator S as shown in Fig. 3 So that the surface of the die-bonding film 20 forms the interface with the separator S or the separator bonding surface. As a result, the dicing die-bonding film X is in contact with a separator covering the side opposite to the base 11 of the dicing tape 10, The stress concentration of the end portion of the bond film, that is, the dicing tape or the pressure-sensitive adhesive layer is deformed, and the die-bonding film and the pressure-sensitive adhesive layer are covered with the separator in such a manner that the pressure- It is difficult to cause stress concentration at the end of the die-bonding film. Therefore, the dicing die-bonding film X is suitable for preventing or suppressing curling of the die-bonding film 20. [

The dicing die-bonding film X is formed so that the outer peripheral end portion 20e of the die-bonding film 20 is in contact with the outer peripheral end portion 12e of the pressure-sensitive adhesive layer 12 of the dicing tape 10 in the film- ) Within 500 mu m. According to such a configuration, the separator is bonded to the die bonding film 20 side of the present dicing die-bonding film X, for example, as shown in Fig. 3, in the form involving the separator S, It is possible to avoid or suppress the aforementioned formation of the shoulder Ya with respect to the dicing die-bonding film Y. [ Therefore, in the case where a plurality of dicing die-bonding films X are arranged on a long-shaped separator and the separator is wound to take the form of a roll, the above- Formation is difficult to occur with the dicing die-bonding film X.

The dicing die-bonding film X is formed so that the outer peripheral end portion 20e of the die-bonding film 20 is in contact with the outer peripheral end portion 12e of the pressure-sensitive adhesive layer 12 of the dicing tape 10 in the film- ) Within 500 mu m. Such a constitution is obtained by processing for forming one dicing tape 10 having a laminated structure of the base material 11 and the pressure-sensitive adhesive layer 12 and processing for forming one die-bonding film 20, As described above, is suitable for carrying out collectively by machining such as punching. The dicing die-bonding film X having such a structure is suitable for efficiently manufacturing from the viewpoints of the number of manufacturing steps and the manufacturing costs.

As described above, the dicing die-bonding film X is suitable for suppressing the curling of the die-bonding film, and it is hard to generate a trace of warping and is suitable for production efficiently.

The outer peripheral end portion 20e of the die bonding film 20 is formed to extend from the outer peripheral end portion 11e of the base material 11 of the dicing tape 10 in the in- Mu] m, more preferably within 900 [mu] m, and more preferably within 800 [mu] m. Such a configuration according to the relationship between the outer peripheral end portion 11e of the base material 11 on which the pressure-sensitive adhesive layer 12 is laminated and the outer peripheral end portion 20e of the die-bonding film 20 on the pressure- In the embodiment in which the single die bond film X is accompanied by a separator covering the side opposite to the substrate 11, for example, as shown in Fig. 3, the surface of the pressure- Contributes to avoid inclusion in the separator bonding surface, and further contributes to suppressing curling of the die-bonding film at the time of peeling the separator.

The thickness of the pressure-sensitive adhesive layer 12 is preferably 30 占 퐉 or less, more preferably 10 占 퐉 or less, and more preferably 5 m or less, as described above. In addition, the thickness of the die-bonding film 20 is preferably 150 占 퐉 or less, more preferably 25 占 퐉 or less, and more preferably 10 占 퐉 or less, as described above. The outer peripheral end 12e of the pressure-sensitive adhesive layer 12 in the film in-plane direction D and the die 12b of the die 12 in the film surface direction D are different from each other depending on the processing method for collectively forming the pressure- The distance between the outer circumferential end portions 20e of the bond film 20 tends to be small and the configuration relating to the thickness of the pressure sensitive adhesive layer 12 and the thickness of the die bond film 20 is not limited to the outer circumferential end portions 12e and 20e, Which is suitable for realizing a small separation distance.

The value of the ratio of the thickness of the die-bonding film 20 to the thickness of the pressure-sensitive adhesive layer 12 is preferably 0.1 to 30, more preferably 0.3 to 10, more preferably 1 to 3 to be. The smaller the ratio of the thickness of the die bond film 20 to the thickness of the pressure sensitive adhesive layer 12 is, the more the processing time for forming the pressure sensitive adhesive layer 12 and the die bond film 20, The distance between the outer peripheral end 12e of the pressure sensitive adhesive layer 12 in the inner direction D and the outer peripheral end 20e of the die bond film 20 tends to be small in practice, The structure relating to the ratio of the thickness of the die-bonding film 20 is suitable for realizing a small separation distance between the outer peripheral end portions 12e and 20e.

The dicing die-bonding film X may be provided in a form having no mark for die-bonding film alignment. As described above, in the manufacturing process of the conventional dicing die-bonding film Y, the dicing tape 60, the pressure-sensitive adhesive layer 62, and the die-bonding film 70, which are significantly different in design dimension, It may be necessary to carry out a step of joining while performing the above-mentioned process. The mark for alignment of the die bonding film is a mark used for such alignment, for example, on the pressure-sensitive adhesive layer 62 of the dicing tape 60 and the die bonding film 70, respectively. In the case of employing a processing method for collectively forming the pressure-sensitive adhesive layer 12 and the die-bonding film 20 in the manufacturing process of the dicing die-bonding film X, it is not necessary to carry out the step of bonding while aligning the both .

4 to 9 show a semiconductor device manufacturing method according to an embodiment of the present invention.

In this semiconductor device manufacturing method, first, as shown in Figs. 4A and 4B, a dividing groove 30a is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the side of the first surface Wa of the semiconductor wafer W, and a wiring structure (not shown) necessary for the semiconductor element is already formed on the first surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held on the first surface Wa A dividing groove 30a having a predetermined depth is formed by using a rotating blade such as a dicing device. The dividing groove 30a is a space for separating the semiconductor wafer W into semiconductor chip units (the dividing grooves 30a are schematically shown by thick lines in Figs. 4 to 6).

Next, as shown in Fig. 4 (c), the joining of the wafer processing tape T2 having the adhesive surface T2a to the first surface Wa side of the semiconductor wafer W and the joining of the wafer processing tape T1 Peeling is performed.

Next, as shown in Fig. 4 (d), in a state in which the semiconductor wafer W is held on the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until the semiconductor wafer W reaches a predetermined thickness (Wafer thinning step). The grinding process can be performed using a grinding machine equipped with a grinding wheel. By this wafer thinning step, a semiconductor wafer 30A that can be separated into a plurality of semiconductor chips 31 is formed in the present embodiment. Specifically, the semiconductor wafer 30A has a portion (connection portion) for connecting a portion to be separated into a plurality of semiconductor chips 31 in the wafer on the second surface Wb side. The distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 mu m, and preferably the thickness of the connecting portion in the semiconductor wafer 30A, Is 3 to 20 mu m.

Next, as shown in Fig. 5A, the semiconductor wafer 30A held on the wafer processing tape T2 is bonded to the die-bonding film 20 of the dicing die-bonding film X. Then, as shown in Fig. Thereafter, as shown in Fig. 5B, the wafer processing tape T2 is peeled from the semiconductor wafer 30A. In the case where the pressure-sensitive adhesive layer 12 in the dicing die-bonding film X is a radiation-curable pressure-sensitive adhesive layer, the die bonding film 20, the pressure sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the side of the substrate 11. The dose is, for example, 50 to 500 mJ / cm 2, preferably 100 to 300 mJ / cm 2. The area (irradiation area R shown in FIG. 1) in which irradiation of the pressure sensitive adhesive layer 12 in the dicing die-bonding film X is performed as a measure for reducing the adhesive strength is performed by, for example, ) Region excluding the periphery of the joint region.

Next, after the ring frame 41 is adhered onto the die-bonding film 20 in the dicing die-bonding film X, as shown in Fig. 6 (a), the die The single die bond film X is fixed to the holding tool 42 of the expand apparatus.

Next, a first expanding process (cool expansion process) is performed as shown in FIG. 6 (b) under a relatively low temperature condition, and the semiconductor wafer 30A is reorganized into a plurality of semiconductor chips 31 The die bonding film 20 of the dicing die bonding film X is cut into the die bonding film 21 of the small piece, and the semiconductor chip 31 with the die bonding film is obtained. In this process, the hollow cylinder-shaped push-up member 43 provided in the expanding device is raised against the dicing tape 10 at the lower side of the drawing of the dicing die bonding film X, and the semiconductor wafer 30A The dicing tape 10 of the dicing die-bonding film X to which the dicing die bonding film X is adhered is stretched so as to stretch in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. The expansions are performed on the dicing tape 10 under the condition that a tensile stress is generated within a range of preferably 15 to 32 MPa, more preferably 20 to 32 MPa. The temperature condition in the Cool Expansion process is, for example, 0 deg. C or less, preferably -20 to -5 deg. C, more preferably -15 to -5 deg. C, and more preferably -15 deg. The expand speed (the speed at which the lifting member 43 rises) in the cooling expansion process is preferably 0.1 to 100 mm / sec. The amount of expanse in the Cool Expand process is preferably 3 to 16 mm.

In this step, the semiconductor wafer 31 is thinned and broken at a portion where the semiconductor wafer 30A is likely to be cracked, resulting in fragmentation of the semiconductor chip 31. [ In addition, in this step, deformation is suppressed in each region where each semiconductor chip 31 is closely attached to the die-bonding film 20 in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expansed On the other hand, a tensile stress generated in the dicing tape 10 acts in a position opposed to the dividing grooves between the semiconductor chips 31 in a state in which such deformation suppressing action does not occur. As a result, portions of the die-bonding film 20 opposed to the dividing grooves between the semiconductor chips 31 are cut off. After this step, as shown in Fig. 6 (c), the lifting member 43 is lowered, and the expanded state of the dicing tape 10 is released.

Next, under a relatively high temperature condition, the second expanding process is performed as shown in Fig. 7 (a), and the distance (spacing distance) between the semiconductor chips 31 with the die bonding film is extended. In this process, the hollow cylinder-shaped push-up member 43 provided in the expand apparatus is raised again, and the dicing tape 10 of the dicing die-bonding film X is expanded. The temperature condition in the second expansion step is, for example, 10 DEG C or more, and preferably 15 to 30 DEG C. [ The expansion speed (the speed at which the lifting member 43 ascends) in the second expanding process is, for example, 0.1 to 10 mm / sec, preferably 0.3 to 1 mm / sec. The expanding amount in the second expanding step is, for example, 3 to 16 mm. The separation distance of the semiconductor die 31 with the die-bonding film is extended to such an extent that the semiconductor die 31 with the die-bonding film can be properly picked up from the dicing tape 10 in the pickup process to be described later. After this step, as shown in Fig. 7 (b), the lifting member 43 is lowered and the expanded state on the dicing tape 10 is released. In order to suppress the narrowing of the separation distance of the semiconductor die 31 with the die bonding film on the dicing tape 10 after releasing the expanded state, It is preferable to heat and shrink a portion of the semiconductor chips 31 located outside the semiconductor chip 31 holding region.

Next, a cleaning step for cleaning the side of the semiconductor chip 31 in the dicing tape 10 carrying the semiconductor chip 31 with a die-bonding film by using a cleaning liquid such as water is optionally carried out, , The semiconductor chip 31 with the die-bonding film is picked up from the dicing tape 10 (pick-up step). For example, the pin member 44 of the pick-up mechanism is raised on the lower side of the dicing tape 10 in the figure with the die-bonding film-attached semiconductor chip 31 to be picked up, And then adsorbed and held by the adsorption jig 45. In the pick-up process, the pushing-up speed of the pin member 44 is, for example, 1 to 100 mm / second, and the push-up amount of the pin member 44 is, for example, 50 to 3000 탆.

Next, as shown in Fig. 9 (a), the picked-up semiconductor chip 31 with the die bonding film is temporarily fixed to the predetermined adherend 51 via the die bond film 21. Then, Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive force at 25 캜 at the time of temporary fixing of the die-bonding film 21 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 51. The configuration in which the die bonding film 21 has a shear adhesive strength of 0.2 MPa or more is a method of bonding the die bonding film 21 and the semiconductor chip 31 or the adherend 51 by ultrasonic vibration or heating in a wire- It is suitable for suppressing the occurrence of shear deformation at the bonding surface of the wire bonding and appropriately performing the wire bonding. The shear adhesive force at 175 캜 at the time of temporarily fixing the die-bonding film 21 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa with respect to the adherend 51.

Next, as shown in FIG. 9B, a terminal portion (not shown) of an electrode pad (not shown) of the semiconductor chip 31 and an adherend 51 is electrically connected through a bonding wire 52 (Wire bonding process). Wiring between the electrode pad of the semiconductor chip 31 and the terminal portion of the adherend 51 and the bonding wire 52 is realized by ultrasonic welding accompanied by heating and is performed so as not to thermally cure the die bond film 21 . As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature in the wire bonding is, for example, 80 to 250 占 폚, preferably 80 to 220 占 폚. Further, the heating time is from several seconds to several minutes.

9 (c), the semiconductor chip 31 is bonded to the semiconductor chip 31 by the sealing resin 53 for protecting the semiconductor chip 31 and the bonding wire 52 on the adherend 51. Next, (Sealing step). In this step, the die-bonding film 21 is thermally cured. In this step, the encapsulating resin 53 is formed by a transfer molding technique using, for example, a mold. As the constituent material of the sealing resin 53, for example, an epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 占 폚, and the heating time is, for example, 60 seconds to several minutes. In the case where the curing of the sealing resin 53 does not proceed sufficiently in this step (sealing step), a post-curing step for completely curing the sealing resin 53 after the present step is performed. The die bonding film 21 can be thermally cured completely together with the sealing resin 53 in the post-curing step even when the die bonding film 21 is not completely cured in the sealing step. In the post-curing process, the heating temperature is, for example, 165 to 185 占 폚, and the heating time is, for example, 0.5 to 8 hours.

As described above, a semiconductor device can be manufactured.

In this embodiment, as described above, after the semiconductor chip 31 with the die-bonding film is temporarily fixed to the adherend 51, the die-bonding film 21 is subjected to the wire bonding process without reaching full thermal curing . In place of such a configuration, in the present invention, after the semiconductor chip 31 with the die bonding film is temporarily fixed to the adherend 51, the wire bonding process may be performed after the die bonding film 21 is thermally cured.

In the semiconductor device manufacturing method according to the present invention, the wafer thinning step shown in Fig. 10 may be performed instead of the wafer thinning step described above with reference to Fig. 4 (d). In the wafer thinning step shown in Fig. 10 after the above-described process is performed with reference to Fig. 4 (c), in a state in which the semiconductor wafer W is held on the wafer processing tape T2, The semiconductor wafer divided body 30B which is thinned by grinding from the two faces Wb and held on the wafer processing tape T2 including the plurality of semiconductor chips 31 is formed. In this step, a method (first method) of grinding the wafer until the dividing groove 30a itself is exposed on the second surface Wb side may be employed. In the step, A method of grinding the wafer up to a point before the grinding step and then generating a crack between the dividing groove 30a and the second face Wb by the action of a pressing force against the wafer from the rotating grindstone to form the semiconductor wafer divided body 30B A second method) may be employed. Depending on the method employed, the depth of the dividing groove 30a formed as described above with reference to Figs. 4A and 4B from the first surface Wa is appropriately determined. In Fig. 10, the dividing grooves 30a through the first method, or the dividing grooves 30a through the second method, and the cracks extending therefrom are schematically shown by bold lines. In the present invention, after the semiconductor wafer divided body 30B thus manufactured is bonded to the dicing die bonding film X in place of the semiconductor wafer 30A, the respective steps described above with reference to Figs. 5 to 9 are performed .

Figs. 11A and 11B show a first expand process (a cool expansion process) performed after the semiconductor wafer divided body 30B is bonded to the dicing die bonding film X. Fig. In this process, the hollow cylinder-shaped push-up member 43 provided in the expanding device is lifted up against the dicing tape 10 at the lower side of the drawing of the dicing die bonding film X, The dicing tape 10 of the dicing die-bonding film X to which the semiconductor wafer 30B is bonded is stretched so as to extend in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B. This expanse is performed under the condition that a tensile stress is generated in the dicing tape 10 within a range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa. The temperature condition in this step is, for example, 0 deg. C or less, preferably -20 to -5 deg. C, more preferably -15 to -5 deg. C, and more preferably -15 deg. The expand speed (the speed at which the lifting member 43 ascends) in this step is preferably 1 to 500 mm / sec. The exponent amount in this step is preferably 50 to 200 mm. By this cooling expansion process, the die bonding film 20 of the dicing die bonding film X is cut into the die bonding film 21 of the small piece, and the semiconductor chip 31 with the die bonding film is obtained. Specifically, in this step, in the die-bonding film 20 adhered to the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded, each semiconductor chip 31 of the semiconductor wafer divided body 30B The dicing tape 10 is prevented from being deformed in the regions where it is in close contact with the semiconductor chip 31 while a portion opposed to the dividing groove 30a between the semiconductor chips 31 is not deformed The resulting tensile stress acts. As a result, portions of the die-bonding film 20 opposed to the dividing grooves 30a between the semiconductor chips 31 are cut off.

In the semiconductor device manufacturing method according to the present invention, instead of the above-described configuration in which the semiconductor wafer 30A or the semiconductor wafer divided body 30B is bonded to the dicing die bonding film X, the semiconductor wafer 30C ) May be bonded to the dicing die-bonding film X.

As shown in Figs. 12 (a) and 12 (b), first, a modified region 30b is formed in a semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the side of the first surface Wa of the semiconductor wafer W, and a wiring structure (not shown) necessary for the semiconductor element is already formed on the first surface Wa. In this step, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T3, and the laser beam Is irradiated to the semiconductor wafer W from the side opposite to the wafer T3, along the line to be divided, and the modified region 30b is formed in the semiconductor wafer W by ablation by multiphoton absorption. The modified region 30b is a weakening region for separating the semiconductor wafer W into semiconductor chips. A method of forming a modified region 30b on a line to be divided by laser light irradiation in a semiconductor wafer is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370, The light irradiation condition is suitably adjusted within the range of, for example, the following conditions.

≪ Laser irradiation condition >

(A) Laser light

Laser light source Semiconductor laser excitation Nd: YAG laser

wavelength 1064 nm

Laser light spot cross-sectional area 3.14 x 10 < ^-8 >

Rash type Q switch pulse

Repetition frequency 100kHz or less

Pulse width 1 μs or less

Print 1mJ or less

Laser light quality TEM00

Polarization characteristic Linear polarization

(B) a condenser lens

Magnification 100 times or less

NA 0.55

Transmittance to laser light wavelength 100% or less

(C) The moving speed of the loading table on which the semiconductor substrate is loaded 280 mm / sec or less

Next, as shown in Fig. 12 (c), in a state in which the semiconductor wafer W is held on the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until the semiconductor wafer W reaches a predetermined thickness Whereby a semiconductor wafer 30C that can be separated into a plurality of semiconductor chips 31 is formed (wafer thinning step). In the present invention, the semiconductor wafer 30C manufactured as described above may be bonded to the dicing die bonding film X in place of the semiconductor wafer 30A, and then each of the steps described above with reference to Figs. 5 to 9 may be performed .

Figs. 13A and 13B show a first expand process (cool expansion process) performed after the semiconductor wafer 30C is bonded to the dicing die bonding film X. Fig. In this process, the hollow cylinder-shaped push-up member 43 provided in the expanding device is raised against the dicing tape 10 at the lower side of the drawing of the dicing die bonding film X, and the semiconductor wafer 30C Of the dicing die-bonding film X is stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expanse is performed under the condition that a tensile stress is generated in the dicing tape 10 within a range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa. The temperature condition in this step is, for example, 0 deg. C or less, preferably -20 to -5 deg. C, more preferably -15 to -5 deg. C, and more preferably -15 deg. The expand speed (the speed at which the lifting member 43 ascends) in this step is preferably 1 to 500 mm / sec. The exponent amount in this step is preferably 50 to 200 mm. By this cooling expansion process, the die bonding film 20 of the dicing die bonding film X is cut into the die bonding film 21 of the small piece, and the semiconductor chip 31 with the die bonding film is obtained. Specifically, in this step, a crack is formed in the weakened modified region 30b of the semiconductor wafer 30C, and the semiconductor chip 31 is fragmented. The semiconductor chips 31 of the semiconductor wafer 30C adhere closely to each other in the die bonding film 20 adhered to the pressure sensitive adhesive layer 12 of the dicing tape 10 to be expanded The tensile stress generated in the dicing tape 10 is applied to a portion opposed to the portion where cracks are formed in the wafer, without such deformation suppressing action occurring. As a result, the portion of the die-bonding film 20 opposed to the portion where cracks are formed between the semiconductor chips 31 is cut off.

Further, in the present invention, the dicing die-bonding film X can be used to obtain a semiconductor chip with a die-bonding film as described above. In the case where a plurality of semiconductor chips are stacked to form a three- It can also be used for obtaining a semiconductor chip with a bond film. Between the semiconductor chips 31 in such a three-dimensional mounting, a spacer may be interposed with the die-bonding film 21, or a spacer may not be interposed.

Example

[Examples 1 to 4]

<Production of dicing tape>

(100 parts by mass) of dodecyl acrylate, 20 parts by mass of 2-hydroxyethyl acrylate (2HEA), and 100 parts by mass of these monomer components in a reaction vessel equipped with a thermometer, a condenser, A mixture containing 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 60 占 폚 for 10 hours under a nitrogen atmosphere (polymerization reaction). Thus, a polymer solution containing the acrylic polymer P ₁ was obtained. The weight average molecular weight (Mw) of the acrylic polymer P _{1 in} the polymer solution was 450,000. Then, a mixture of the polymer solution containing the acrylic polymer P ₁ , 2-methacryloyloxyethyl isocyanate (MOI) and dibutyltin dilaurate as an addition reaction catalyst was stirred at room temperature for 48 hours, Followed by stirring in an air atmosphere (addition reaction). In the reaction solution, the amount of the MOI is, the acrylic acid dodecyl, and 20 molar parts with respect to 100 molar parts of thread, the molar ratio of that amount to the MOI 2HEA total amount of units derived to the hydroxyl group in the acrylic polymer P ₁ is 1. In addition, in the reaction solution, the blending amount of dibutyltin dilaurate is 0.03 parts by mass based on 100 parts by mass of the acrylic polymer P ₁ . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in its side chain was obtained. Then, 1 part by mass of a polyisocyanate compound (trade name: Coronate L, manufactured by Tosoh Corporation) and 2 parts by mass of a photopolymerization initiator (trade name: Irgacure 127 (trade name)) were added to the polymer solution in an amount of 1 part by mass based on 100 parts by mass of the acrylic polymer P ₂ , Manufactured by BASF Co., Ltd.) was added and mixed. Toluene was added to the mixture so that the viscosity of the mixture at room temperature was 500 mPa 占 and diluted to obtain a pressure-sensitive adhesive solution. Subsequently, a pressure-sensitive adhesive solution was applied to the silicone release-treated surface of a PET separator (having a thickness of 38 mu m) having a surface subjected to silicone release treatment using an applicator to form a coating film. The coating film was heat-dried at 130 DEG C for 2 minutes And a pressure-sensitive adhesive layer having a thickness of 10 mu m was formed on the PET separator. Subsequently, a substrate made of ethylene-vinyl acetate copolymer (EVA) (trade name: "RB-0104", thickness: 130 μm, manufactured by Kurashiki Boshiki Co., Ltd.) was applied to the exposed surface of the pressure-sensitive adhesive layer using a laminator at room temperature Respectively. Thus, a dicing tape was produced.

&Lt; Production of die bond film &

, 54 parts by mass of an acrylic resin (a copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight of 1,200,000, glass transition temperature of 0 占 폚, and epoxy value of 0.4eq / kg) , 4.5 parts by mass of a solid phenol resin (trade name &quot; MEHC-7851SS &quot;, solid at 23 占 폚, manufactured by Meiwa Kasei K. K.) and a liquid phase phenol resin (trade name: MEH-8000H, liquid at 23 占 폚, Ltd.) and 40 parts by mass of a silica filler (trade name "SO-C2", average particle size of 0.5 μm, manufactured by Admatechs Co., Ltd.) were added to methyl ethyl ketone and mixed to obtain a copolymer having a viscosity at room temperature of And the concentration was adjusted to be 700 mPa · s to obtain an adhesive composition. Subsequently, an adhesive composition was applied onto the silicone release-treated surface of a PET separator (having a thickness of 38 mu m) having a surface subjected to the silicon release treatment to form a coating film, and the coating film was heated and dried at 130 DEG C for 2 minutes And a die bond film (DAF) having a thickness of 10 mu m was formed on the PET separator.

<Production of dicing die-bonding film>

After separating the PET separator from the dicing tape described above, the pressure-sensitive adhesive layer exposed on the dicing tape and the above-mentioned die bond film accompanying the separator were bonded to each other at room temperature using a laminator to obtain a laminated sheet body. Subsequently, the laminated sheet body was subjected to a punching process in which the cutting edge was pushed in from the EVA base side of the dicing tape to the separator. Concretely, a process for machining a rotary roll with a cutting blade having a cutting surface formed by a Thompson blade for circular punching and wound around a roll surface, which is rotatable about an axis perpendicular to the direction, while moving the laminated sheet body in one direction at a speed of 10 m / Punching processing was carried out by bringing the blade attaching surface into contact with the EVA base side of the laminated sheet body with a predetermined pressing force. The peripheral length of the rotary roll used in this punching process, i.e., the circumferential length, is 378.9 mm. The Thompson blade wound on the surface of the rotating roll is made of SUS, and a circle having a diameter of 370 mm is disposed on the roll surface so as to be capable of punching. The height of the blade is 0.3 mm and the angle of the blade is 50 °. By such punching processing, the dicing tape and the die-bonding film were collectively processed and a dicing die-bonding film was formed on the separator. Thereafter, the peripheral material laminate portion of the formed dicing die-bonding film was removed on the separator. The pressure-sensitive adhesive layer in the dicing tape was irradiated with ultraviolet rays from the side of the substrate. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the irradiated light quantity was set to 350 mJ / cm 2. Thus, each of the dicing die-bonding films of Examples 1 to 4 having a laminated structure including a dicing tape and a die-bonding film (DAF) was produced.

[Comparative Example 1]

A dicing die-bonding film of Comparative Example 1 was produced in the same manner as in the dicing die-bonding films of Examples 1 to 4 except that the dicing tape and the die-bonding film were separately punched and then bonded. In Comparative Example 1, the dicing tape was punched to a diameter of 370 mm in a state accompanied by a separator, and the die-bonding film was punched with a diameter of 330 mm in a state involving a separator. The bonding was performed while aligning the center of the dicing tape and the center of the die-bonding film.

<Adhesive strength measurement>

The adhesive strength of each of the die-bonding films in each of the dicing die-bonding films of Examples 1 to 4 and Comparative Example 1 was measured as follows. First, the die-bonding film was peeled off from the dicing tape, and a reinforcing tape (trade name &quot; BT-315 &quot;, manufactured by Nitto Denko Kabushiki Kaisha) was bonded to the side of the die-bonding film which was adhered to the dicing tape , And a test piece (10 mm wide × 100 mm long) was cut out from the reinforcing film. Then, the test piece and the adherend were pressed together by a pressing operation in which the test piece was bonded to the SUS plate as the adherend, and the 2 kg roller was reciprocated one time. After allowing to stand for 30 minutes at room temperature, a die-bonding film test piece for an SUS plate was peeled off at 180 DEG peel adhesion to a die-bonding film test piece using a tensile tester (trade name &quot; Autograph AGS-J &quot;, manufactured by Shimadzu Seisakusho Co., Ltd.) Were measured. In this measurement, the measurement temperature to the peeling temperature was 23 占 폚, the tensile angle was 180 占 and the tensile speed was 300 mm / min. In the tensile test, the average value of the following peeling force, excluding the peeling force indicated by the first 10 mm, was taken as 180 peel adhesion (N / 10 mm). The measurement results are shown in Table 1.

&Lt; Distance of outer peripheral end portion &

The end portions of the respective dicing die-bonding films of Examples 1 to 4 were observed using a scanning electron microscope or an optical microscope, and the distance d1 and d2 shown schematically in Fig. 14 were measured. The end portion to be observed in the dicing die-bonding film is the front end portion in the MD direction (the direction in which the laminated sheet moves) in the punching process of the dicing die-bonding film manufacturing process described above. The separation distance d1 is the distance in the film plane direction D between the outer peripheral end 12e of the pressure sensitive adhesive layer 12 of the dicing tape 10 and the outer peripheral end 20e of the die bonding film 20. The separation distance d2 is the distance in the film plane direction D between the outer peripheral end portion 11e of the base material 11 of the dicing tape 10 and the outer peripheral end portion 20e of the die bonding film 20. The measurement results are shown in Table 1.

&Lt; Curing test of die-bonding film >

Each of the dicing die-bonding films provided with the separators of Examples 1 to 4 and Comparative Example 1 was dipped in a predetermined wafer (diameter 12 mm) using a wafer mounting apparatus (MA-3000III, manufactured by Nitto Seimitsu Kika Kogyo Co., Ltd.) Inch), the presence or absence of curling of the die-bonding film at the peeling of the separator was confirmed. The bonding of the wafers was carried out under conditions of a bonding speed of 5 mm / sec, a temperature of 60 캜 and a pressure of 0.15 MPa. Ten sheets of each of the dicing die-bonding films each provided with the separators of Examples 1 to 4 and Comparative Example 1 were subjected to the curling test. In the ten dicing die-bonding films, the case where no curling occurred in the die-bonding film was evaluated as good (O), and curling of the die-bonding film occurred in one or more dicing die-bonding films. It was evaluated as &quot; DELTA &quot; when it did not reach the region for wafer adhesion (the region inside the outer region from the outer peripheral end to the inner peripheral portion of 15 mm in the die-bonding film), and in the case of one or more dicing die- (X) in the case where curling leading to the application region occurred in the die-bonding film was evaluated. The evaluation results are shown in Table 1.

X: Dicing die-bonding film
10: Dicing tape
11: substrate
11e: outer peripheral end
12: pressure-sensitive adhesive layer
12e: outer peripheral end
20, 21: die bond film
20e: outer peripheral end
W, 30A, and 30C: semiconductor wafers
30B: Semiconductor wafer parted body
30a: Split groove
30b: modified region
31: Semiconductor chip

Claims (10)

A dicing tape having a laminated structure including a substrate and a pressure-sensitive adhesive layer;
And a die-bonding film which is in close contact with the pressure-sensitive adhesive layer in the dicing tape so as to be removable,
Wherein the outer peripheral end of the die-bonding film is at a distance of not more than 500 占 퐉 from the outer peripheral end of the pressure-sensitive adhesive layer in an in-plane direction of the film. The method according to claim 1,
Wherein the outer peripheral end of the die-bonding film is at a distance of not more than 1000 占 퐉 from the outer peripheral end of the substrate in an in-plane direction of the film. The method according to claim 1,
The die-bonding film was a dicing die having a 180 DEG peel adhesion strength of 0.3 to 20 N / 10 mm with respect to the SUS plane in a peeling test under the conditions of a temperature of 23 DEG C, a peeling angle of 180 DEG and a tensile rate of 300 mm / Bond film. The method according to claim 1,
Wherein the thickness of the pressure-sensitive adhesive layer is 30 占 퐉 or less and the thickness of the die-bonding film is 150 占 퐉 or less. The method of claim 3,
Wherein the thickness of the pressure-sensitive adhesive layer is 30 占 퐉 or less and the thickness of the die-bonding film is 150 占 퐉 or less. The method according to claim 1,
Wherein the value of the ratio of the thickness of the die-bonding film to the thickness of the pressure-sensitive adhesive layer is 0.1 to 30. 5. The method of claim 4,
Wherein the value of the ratio of the thickness of the die-bonding film to the thickness of the pressure-sensitive adhesive layer is 0.1 to 30. 6. The method of claim 5,
Wherein the value of the ratio of the thickness of the die-bonding film to the thickness of the pressure-sensitive adhesive layer is 0.1 to 30. The method according to claim 1,
Having a disc shape having a diameter within a range of 345 to 380 mm or within a range of 245 to 280 mm. 10. The method according to any one of claims 1 to 9,
A dicing die-bonding film having no die-bonding film alignment mark.

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