KR102477487B1 - Dicing tape, dicing die bond film and method of manufacturing semiconductor device - Google Patents

Abstract

In the expand process performed using a dicing die-bonding film (DDAF) to obtain a semiconductor chip with a die-bonding film (DAF), the DAF on the dicing tape is properly cut, as well as lifting and peeling from the dicing tape. A dicing tape suitable for suppressing, DDAF, and a method for manufacturing a semiconductor device are provided.
The dicing tape 10 of the present invention exhibits a tensile stress within the range of 15 to 32 MPa at at least a partial strain value in the range of 5 to 30% in a tensile test (test piece width 20 mm, initial distance between chucks 100 mm) can The DDAF of the present invention includes a dicing tape (10) and a DAF (20) on the pressure-sensitive adhesive layer (12). In the semiconductor device manufacturing method of the present invention, after bonding a semiconductor wafer or a divided body thereof to the DAF 20 side of the DDAF, the dicing tape 10 is expanded under the condition that a tensile stress within a range of 15 to 32 MPa is generated. including the process of

Description

Dicing tape, dicing die bond film, and semiconductor device manufacturing method

The present invention relates to a dicing tape and a dicing die bond film that can be used in the manufacturing process of a semiconductor device, and a method for manufacturing a semiconductor device.

In the manufacturing process of a semiconductor device, a dicing die-bonding film is sometimes used to obtain a semiconductor chip with an adhesive film of a size equivalent to a die-bonding chip, that is, a semiconductor chip with a die-bonding film. The dicing die-bonding film has a size corresponding to the semiconductor wafer to be processed, and includes, for example, a dicing tape composed of a base material and an adhesive layer, and a die-bonding film adhered to the adhesive layer side so as to be peelable.

As one of the methods of obtaining a semiconductor chip with a die-bonding film using a dicing die-bonding film, a method is known in which a dicing tape in the dicing die-bonding film is expanded to pass through a step for cutting the die-bonding film. In this method, first, a semiconductor wafer is bonded on the die-bonding film of the dicing die-bonding film. This semiconductor wafer is processed so that it can be cut together with a die-bonding film later and can be divided into a plurality of semiconductor chips, for example. Next, the dicing tape of the dicing die-bonding film is expanded to cut the die-bonding film so that a plurality of small pieces of adhesive film, each of which is in close contact with the semiconductor chip, is generated from the die-bonding film on the dicing tape. In this expand step, cutting also occurs in the semiconductor wafer on the die-bonding film at a location corresponding to the cutting location in the die-bonding film, and the semiconductor wafer is divided into a plurality of semiconductor chips on the dicing die-bonding film or dicing tape. are reorganized Next, after passing through, for example, a cleaning process, each semiconductor chip is picked up on a dicing tape together with a die-bonding film having a size corresponding to the chip adhering thereto. In this way, a semiconductor chip with a die-bonding film is obtained. This semiconductor chip with a die-bonding film is fixed to an adherend such as a mounting substrate by die-bonding via the die-bonding film. A technique for obtaining a semiconductor chip with a die-bonding film using a dicing die-bonding film is described, for example, in Patent Documents 1 to 3 below.

Japanese Unexamined Patent Publication No. 2014-158046 Japanese Unexamined Patent Publication No. 2016-115775 Japanese Unexamined Patent Publication No. 2016-115804

In the above-described expand step, a cutting force is applied from the dicing tape to be expanded to the die-bonding film in close contact with the dicing tape in the dicing die-bonding film. There are cases in which part of is not divided. Further, in a conventional semiconductor chip with a die-bonding film on a dicing tape that has undergone an expand step, when the edge of the die-bonding film partially peels off from the dicing tape (ie, the die-bonding film from the dicing tape When lifting occurs at the edge of the attached semiconductor chip), or the semiconductor chip concerned or its die-bonding film peels as a whole from the dicing tape. Occurrence of partial peeling, that is, lifting, may also be a cause of unintentional peeling of the semiconductor chip with the die-bonding film from the dicing tape in the cleaning step after the expand step or the like. Occurrence of partial peeling, that is, lifting, may cause pickup defects in the pickup process. As the wiring structure preformed on the surface of the semiconductor wafer or the surface of the semiconductor chip becomes multilayered, the difference in coefficient of thermal expansion between the resin material in the wiring structure and the semiconductor material of the semiconductor chip main body also becomes a factor, and the above-described lifting or peeling is likely to occur.

The present invention has been conceived based on the above circumstances, and in the expand step performed using a dicing die-bonding film, the die-bonding film adhering to the dicing tape is well cut and diced It is an object of the present invention to provide a dicing tape, a dicing die-bonding film, and a semiconductor device manufacturing method suitable for suppressing lifting or peeling from the tape.

According to the first aspect of the present invention, a dicing tape is provided. This dicing tape has a laminated structure including a base material and an adhesive layer, and in a tensile test performed on a dicing tape test piece having a width of 20 mm at an initial distance between chucks of 100 mm, at least a part of the range of 5 to 30%. It can exhibit tensile stress within the range of 15 to 32 MPa at the strain value of . One deformation value within the range of 5 to 30% is included in at least some deformation values in the range of 5 to 30%. A dicing tape having such a structure can be used to obtain a semiconductor chip with a die-bonding film in the manufacturing process of a semiconductor device in the form in which the die-bonding film adheres to the pressure-sensitive adhesive layer side.

In the manufacturing process of a semiconductor device, as mentioned above, the expand process performed using a dicing die-bonding film may be performed in order to obtain a semiconductor chip with a die-bonding film. In the expand step, the tensile stress generated in the dicing tape expanded from the dicing die-bonding film is 15 MPa or more and 32 MPa or less, so that the tensile stress as a sufficient cutting force from the dicing tape during the expansion to the die-bonding film is reduced. Dicing of the film or a semiconductor chip with the film while avoiding excessive residual stress acting on the die-bonding film after cutting from the dicing tape after expansion, while being suitable for cutting the die-bonding film by applying The present inventors have found that it is suitable for suppressing lifting or peeling from the tape. For example, it is as showing by the Example and comparative example mentioned later. And, the dicing tape according to the first aspect of the present invention has a deformation value of 5% or more suitable for securing a sufficient tensile length for generating cleavage in the die bond film, and the tensile length in the expanding step is prevented from becoming excessive. It is at least a part of the strain value in the range of 30% or less of the strain value suitable for efficiently performing the expand process by avoiding, and as described above, it can exhibit a tensile stress within the range of 15 to 32 MPa. Such a dicing tape is suitable for use in an expanding process for expanding under the condition of generating a tensile stress within a range of 15 to 32 MPa in the form in which the die-bonding film is adhered to the pressure-sensitive adhesive layer side, and therefore, It is suitable for suppressing lifting and peeling from the dicing tape while cutting well with respect to the die-bonding film on the dicing tape in the pand process.

The dicing tape according to the first aspect of the present invention has a deformation value of 5% or more as described above capable of exhibiting a tensile stress in the range of 15 to 32 MPa in the tensile test, and the dicing tape is on the side of the pressure-sensitive adhesive layer. In order to secure a sufficient tensile length when the die-bonding film is used in the expand process in a form in close contact with the die-bonding film, the deformation value capable of exhibiting a tensile stress within the range of 15 to 32 MPa in the tensile test is preferably 6%. or more, more preferably 7% or more, more preferably 8% or more. In addition, the dicing tape according to the first aspect of the present invention has a deformation value of 30% or less as described above capable of exhibiting a tensile stress in the range of 15 to 32 MPa in the tensile test, and this dicing tape is In order to avoid excessive tensile length required when used in the expand process in a form in which the die bond film is in close contact with the pressure-sensitive adhesive layer side, the deformation value that can exhibit tensile stress within the range of 15 to 32 MPa in the tensile test is It is preferably 20% or less, more preferably 17% or less, still more preferably 15% or less, still more preferably 13% or less.

The tensile stress that the dicing tape according to the first aspect of the present invention can exhibit in the tensile test is preferably 20 to 32 MPa. Such a dicing tape is suitable for use in an expanding process for expanding under conditions in which a tensile stress within a range of 20 to 32 MPa is generated in a form in which a die-bonding film is adhered to the pressure-sensitive adhesive layer side. In the expand process, as the tensile stress generated in the dicing tape expanded from the dicing die-bonding film exceeds 15 MPa, the tensile stress acting as a cutting force from the dicing tape to the die-bonding film during expansion is tend to be large.

In the tensile test, the lower the temperature condition, the greater the tensile stress exhibited by the dicing tape or its test piece. Therefore, the temperature condition in the tensile test is preferably -15°C. According to this configuration, in order to use the relatively large tensile stress generated in the dicing tape to be expanded under the temperature condition of -15 ° C. as a cutting force to the die-bonding film in the expanding step for cutting, It is possible to perform the re-expanding step for lengthening the distance between semiconductor chips with die-bonding films under conditions of relatively high temperature (for example, normal temperature) while suppressing the tensile stress generated by the dicing tape.

In the dicing tape according to the first aspect of the present invention, the tensile speed condition in the tensile test is preferably in the range of 10 to 1000 mm/min, more preferably in the range of 100 to 1000 mm/min. Process speed when this dicing tape is used in the expand process in the form of a die-bonding film adhered to the pressure-sensitive adhesive layer side, and furthermore, from the viewpoint of productivity of the semiconductor device, 15 to 32 MPa at a predetermined strain value in the dicing tape The tensile speed conditions of the tensile test for generating a tensile stress within the range of is preferably 10 mm/min or more, more preferably 100 mm/min or more. From the viewpoint of avoiding breakage when this dicing tape is used in the expand process in the form of a die-bonding film adhered to the pressure-sensitive adhesive layer side, the dicing tape has a predetermined strain value and is a tensile strain within the range of 15 to 32 MPa. The tensile speed condition of the tensile test for generating stress is preferably 1000 mm/min or less, more preferably 300 mm/min or less.

According to a second aspect of the present invention, a dicing die bond film is provided. This dicing die-bonding film includes the above-described dicing tape according to the first aspect of the present invention and a die-bonding film on the pressure-sensitive adhesive layer in the dicing tape. Such a dicing die bond film provided with the dicing tape according to the first aspect of the present invention is an expander for expanding the dicing tape under conditions in which a tensile stress in the range of 15 to 32 MPa is generated in the dicing tape. It is suitable for use in the pand process, and therefore suitable for suppressing lifting or peeling from the dicing tape while cutting well with respect to the die bond film on the dicing tape in the expand process.

According to a third aspect of the present invention, a semiconductor device manufacturing method is provided. This semiconductor device manufacturing method includes the following first step and second step. In the first step, a semiconductor wafer that can be singulated into a plurality of semiconductor chips or a semiconductor wafer divided body including a plurality of semiconductor chips is bonded to the dicing die bonding film. The dicing die-bonding film used in the first step includes a dicing tape having a laminated structure including a substrate and a pressure-sensitive adhesive layer, and a die-bonding film on the pressure-sensitive adhesive layer in the dicing tape. In this process, a semiconductor wafer division body or a semiconductor wafer is bonded to the die-bonding film side of such a dicing die-bonding film. Then, in the second step, the die-bonding film is cut to obtain a semiconductor chip with a die-bonding film by expanding the dicing tape under conditions in which a tensile stress within the range of 15 to 32 MPa is generated in the dicing tape. The expansion of the dicing tape is performed in a two-dimensional direction including, for example, a radial direction and a circumferential direction of a semiconductor wafer divided body or semiconductor wafer bonded to a dicing die bond film.

In the expand process performed using a dicing die-bonding film to obtain a semiconductor chip with a die-bonding film, the tensile stress generated in the dicing tape expanded from the dicing die-bonding film is 15 MPa or more and 32 MPa or less, It is suitable for cutting the die-bonding film by applying tensile stress as a sufficient cutting force to the die-bonding film from the dicing tape in the pan, and residual stress acting on the die-bonding film after cutting from the dicing tape after expansion. This inventor discovered that it is suitable for avoiding this excessiveness and suppressing the lifting and peeling of the said film or the said film-attached semiconductor chip from the dicing tape. For example, it is as showing by the Example and comparative example mentioned later. And, in the second step of the semiconductor device manufacturing method according to the third aspect of the present invention, in the dicing tape of the dicing die-bonding film accompanying the semiconductor wafer division body or the semiconductor wafer on the die-bonding film side, 15 to 32 MPa Under conditions where tensile stress within the range is generated, the dicing tape is expanded. This semiconductor device manufacturing method including such a second process, that is, an expand process, is suitable for cutting the die-bonding film on the dicing tape well and suppressing lifting or peeling from the dicing tape.

In the second step of the semiconductor device manufacturing method, the lower the temperature condition is, the higher the tensile stress exhibited by the dicing tape tends to be. It is preferably -20 to -5°C, more preferably -15 to -5°C, and still more preferably -15°C. According to this configuration, the relatively large tensile stress generated under a relatively low temperature condition with respect to the dicing tape expanded in the second step is used as a cutting force for the die bond film in the expanding step for cutting, and then , It is possible to perform the second expand step for lengthening the distance between semiconductor chips with die-bonding films after cutting under conditions of relatively high temperature (for example, room temperature) while suppressing the tensile stress generated by the dicing tape.

1 is a schematic cross-sectional view of a dicing die-bonding film according to an embodiment of the present invention.
2 shows some steps in a semiconductor device manufacturing method according to an embodiment of the present invention.
3 shows some steps in a semiconductor device manufacturing method according to an embodiment of the present invention.
4 shows some steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
5 shows some steps in a semiconductor device manufacturing method according to an embodiment of the present invention.
6 shows some steps in a method for manufacturing a semiconductor device according to an embodiment of the present invention.
7 shows some steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
8 shows some steps in a modified example of the semiconductor device manufacturing method according to one embodiment of the present invention.
9 shows some steps in a modified example of the semiconductor device manufacturing method according to one embodiment of the present invention.
10 shows some steps in a modified example of the method for manufacturing a semiconductor device according to an embodiment of the present invention.
11 shows some steps in a modified example of the method for manufacturing a semiconductor device according to an embodiment of the present invention.
Fig. 12 shows stress-strain curves obtained for the dicing tapes of Examples 1 and 2 and Comparative Examples 1 and 2.

1 is a schematic cross-sectional view of a dicing die-bonding film X according to an embodiment of the present invention. The dicing die-bonding film X has a laminated structure including the dicing tape 10 and the die-bonding film 20 according to one embodiment of the present invention, and is used for manufacturing a semiconductor chip with a die-bonding film in the manufacture of a semiconductor device. It can be used in the expand process in the process of obtaining. In addition, the dicing die-bonding film X has a disk shape, for example, of a size corresponding to a semiconductor wafer to be processed in the manufacturing process of the semiconductor device.

The dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12, and in a tensile test performed at an initial distance between chucks of 100 mm with respect to a dicing tape test piece having a width of 20 mm, 5 Tensile stress in the range of 15 to 32 MPa can be exhibited with at least a partial strain value in the range of 15 to 30%. One deformation value within the range of 5 to 30% is included in at least some deformation values in the range of 5 to 30%.

The base material 11 of the dicing tape 10 is an element that functions as a support in the dicing tape 10 to the dicing die-bonding film X. As the substrate 11, for example, a plastic substrate (particularly a plastic film) can be suitably used. Examples of the constituent material of the plastic substrate include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyetherimide, polyamide, and wholly aromatic. polyamides, polyphenylsulfides, aramids, fluororesins, cellulose resins, and silicone resins. Examples of the polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerization polypropylene, block copolymerization polypropylene, homopolyprolene, polybutene, polymethylpentene, and ethylene-acetic acid. vinyl copolymers, ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid ester copolymers, ethylene-butene copolymers, and ethylene-hexene copolymers. Examples of polyester include polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The substrate 11 may consist of one type of material or may consist of two or more types of materials. The substrate 11 may have a single layer structure or may have a multilayer structure. When the pressure-sensitive adhesive layer 12 on the base material 11 is of an ultraviolet curable type as will be described later, the base material 11 preferably has ultraviolet light transmittance. In addition, when the base material 11 is made of a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film.

When shrinking the dicing tape 10 to the base material 11 by, for example, partial heating at the time of use of the dicing die-bonding film X, the base material 11 preferably has heat shrinkability. In addition, when the substrate 11 is made of a plastic film, in order to realize isotropic heat shrinkability with respect to the dicing tape 10 or the substrate 11, the substrate 11 is preferably a biaxially stretched film. The dicing tape 10 to base material 11 have a heat shrinkage rate of preferably 2 to 30%, more preferably 2 to 25% in a heat treatment test conducted under conditions of a heating temperature of 100°C and a heat treatment time of 60 seconds. %, more preferably 3 to 20%, more preferably 5 to 20%. The said thermal contraction rate means the thermal contraction rate of at least one of the so-called thermal contraction rate of MD direction, and the thermal contraction rate of so-called TD direction.

The surface of the base material 11 on the side of the pressure-sensitive adhesive layer 12 may be treated to improve adhesion with the pressure-sensitive adhesive layer 12 . Examples of such treatments include physical treatments such as corona discharge treatment, plasma treatment, sand mat processing treatment, ozone exposure treatment, flame exposure treatment, high-voltage electric shock exposure treatment, and ionizing radiation treatment, chemical treatment such as chromic acid treatment, and undercoating. treatment can be given.

The thickness of the substrate 11 is preferably 40 μm or more, more preferably 40 μm or more, from the viewpoint of ensuring strength for the substrate 11 to function as a support in the dicing tape 10 to the dicing die bond film X. is 50 μm or more, more preferably 55 μm or more, and more preferably 60 μm or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape 10 to the dicing die-bonding film X, the thickness of the substrate 11 is preferably 200 μm or less, more preferably 180 μm or less, and more Preferably it is 150 micrometers or less.

The adhesive layer 12 of the dicing tape 10 contains an adhesive. The adhesive may be an adhesive capable of intentionally reducing the adhesive force (adhesive force reducing type adhesive) by an external action such as radiation or heating, or an adhesive whose adhesive force is not reduced mostly or completely depending on an external action (adhesive force non-reduced pressure-sensitive adhesive) may be used, and it can be appropriately selected depending on the method and conditions for dicing semiconductor chips to be diced into pieces using the dicing die-bonding film X.

When using the pressure-sensitive adhesive as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, in the process of manufacturing or using the dicing die bond film X, the pressure-sensitive adhesive layer 12 shows a relatively high adhesive strength and a relatively low adhesive strength. It becomes possible to distinguish and use the state indicating . For example, when bonding the die bond film 20 to the pressure-sensitive adhesive layer 12 of the dicing tape 10 in the process of manufacturing the dicing die bond film X, or when the dicing die bond film X is used for a predetermined wafer dicing When used in the process, it is possible to suppress or prevent lifting or peeling of an adherend such as the die-bonding film 20 from the pressure-sensitive adhesive layer 12 by using a state in which the pressure-sensitive adhesive layer 12 exhibits a relatively high adhesive force. On the other hand, later, in the pick-up step for picking up the semiconductor chip with die-bonding film from the dicing tape 10 of the dicing die-bonding film X, the adhesive force of the pressure-sensitive adhesive layer 12 is reduced, then the pressure-sensitive adhesive layer 12 ), it becomes possible to appropriately pick up a semiconductor chip with a die-bonding film.

As such an adhesive force reducing adhesive, a radiation curable adhesive (a pressure sensitive adhesive having radiation curability), a heat foaming adhesive, etc. are mentioned, for example. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of pressure-sensitive adhesive may be used, or two or more types of pressure-sensitive adhesive may be used. In addition, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 12 (eg, wafer The central region, which is the region to be bonded, may be formed of an adhesive with reduced adhesive force, and the other portion (eg, the region to be adhered to the wafer ring, the region outside the central region) may be formed with a non-adhesion-reduced adhesive. In the case where the pressure-sensitive adhesive layer 12 has a laminated structure, all layers constituting the laminated structure may be formed of a pressure-sensitive adhesive, or some of the layers in the laminated structure may be formed of a pressure-sensitive adhesive.

As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, a pressure-sensitive adhesive of the type that is cured by irradiation with electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used. A type of adhesive (ultraviolet curable adhesive) can be used particularly suitably.

Examples of the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 include a base polymer such as an acrylic polymer, which is an acrylic pressure-sensitive adhesive, and a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond. , addition-type radiation-curable pressure-sensitive adhesives.

The acrylic polymer preferably contains a monomer unit derived from an acrylic acid ester and/or a methacrylic acid ester as the main monomer unit in the largest proportion by mass. Below, "(meth)acryl" is used, and "acryl" and/or "methacryl" are shown.

As the (meth)acrylic acid ester for forming the monomer unit of the acrylic polymer, for example, hydrocarbon group-containing (meth)acrylic acid esters such as (meth)acrylic acid alkyl esters, (meth)acrylic acid cycloalkyl esters, (meth)acrylic acid aryl esters, etc. can be heard Examples of (meth)acrylic acid alkyl esters include methyl esters, ethyl esters, propyl esters, isopropyl esters, butyl esters, isobutyl esters, s-butyl esters, t-butyl esters, pentyl esters, and iso-butyl esters of (meth)acrylic acid. Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester esters, octadecyl esters, and eicosyl esters. Examples of the (meth)acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth)acrylic acid. Examples of the (meth)acrylate aryl ester include phenyl (meth)acrylate and benzyl (meth)acrylate. As the (meth)acrylic acid ester as the main monomer for the acrylic polymer, one type of (meth)acrylic acid ester may be used, or two or more types of (meth)acrylic acid ester may be used. In order to appropriately express basic properties such as adhesiveness by (meth)acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of (meth)acrylic acid ester as the main monomer in the total monomer components for forming the acrylic polymer is preferably is 40% by mass or more, more preferably 60% by mass or more.

The acrylic polymer may contain a monomer unit derived from another monomer copolymerizable with (meth)acrylic acid ester in order to modify its cohesive force or heat resistance. Examples of such monomer components include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, functional group-containing monomers such as acrylamide and acrylonitrile. can Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxy ethyl (meth)acrylate, carboxy pentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. As an acid anhydride monomer, maleic acid anhydride and itaconic acid anhydride are mentioned, for example. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, and (meth)acrylate. ) 8-hydroxyoctyl acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and (4-hydroxymethylcyclohexyl)methyl (meth)acrylate. Examples of the glycidyl group-containing monomer include glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamidopropanesulfonic acid, sulfopropyl (meth)acrylate, and (meth) and acryloyloxynaphthalenesulfonic acid. As a phosphoric acid group containing monomer, 2-hydroxyethyl acryloyl phosphate is mentioned, for example. As the said other monomer for an acrylic polymer, one type of monomer may be used and two or more types of monomers may be used. In order to appropriately express basic characteristics such as adhesiveness by (meth)acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of the other monomer components to the total monomer components for forming the acrylic polymer is preferably 60% by mass. or less, more preferably 40% by mass or less.

The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth)acrylic acid ester as a main monomer in order to form a crosslinked structure in the polymer backbone. As such a polyfunctional monomer, for example, hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, and neopentyl glycol di(meth)acrylate rate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy(meth)acrylate ( That is, polyglycidyl (meth)acrylate), polyester (meth)acrylate, and urethane (meth)acrylate are mentioned. As the polyfunctional monomer for the acrylic polymer, one type of polyfunctional monomer may be used, or two or more types of polyfunctional monomers may be used. The ratio of the polyfunctional monomers in the total monomer components for forming the acrylic polymer is preferably 40% by mass or less in order to appropriately express basic properties such as adhesiveness by (meth)acrylic acid ester in the pressure-sensitive adhesive layer 12. , More preferably, it is 30 mass % or less.

An acrylic polymer can be obtained by polymerizing raw material monomers for forming it. As a polymerization method, solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization are mentioned, for example. From the viewpoint of high cleanliness in the semiconductor device manufacturing method in which the dicing tape 10 to the dicing die-bonding film X are used, the pressure-sensitive adhesive layer 12 in the dicing tape 10 to the dicing die-bonding film X Since the number of low molecular weight substances is preferably less, the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000.

The pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming it may contain, for example, an external crosslinking agent in order to increase the number average molecular weight of base polymers such as acrylic polymers. Examples of the external crosslinking agent for forming a crosslinked structure by reacting with a base polymer such as an acrylic polymer include polyisocyanate compounds, epoxy compounds, polyol compounds (such as polyphenol compounds), aziridine compounds, and melamine crosslinking agents. The content of the external crosslinking agent in the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming it is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, based on 100 parts by mass of the base polymer.

Examples of the radiation-polymerizable monomer component for forming the radiation-curable pressure-sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol tetra (meth) acrylate. ) acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanedioldi(meth)acrylate. Examples of the radiation-polymerizable oligomer component for forming the radiation-curable pressure-sensitive adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and having a molecular weight of about 100 to 30,000 it is suitable The total content of the radiation-polymerizable monomer component or oligomer component in the radiation-curable pressure-sensitive adhesive is determined within a range that can appropriately reduce the adhesive strength of the pressure-sensitive adhesive layer 12 to be formed, relative to 100 parts by mass of a base polymer such as an acrylic polymer, For example, it is 5-500 mass parts, Preferably it is 40-150 mass parts. In addition, as an addition-type radiation curable adhesive, you may use what was disclosed in Unexamined-Japanese-Patent No. 60-196956, for example.

As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, an intrinsic type radiation-curable pressure-sensitive adhesive containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at a polymer side chain or a polymer main chain terminal in a polymer main chain. An adhesive may also be mentioned. Such an internal type radiation-curable pressure-sensitive adhesive is suitable because it suppresses unintended changes in the adhesive properties with time due to migration of low-molecular-weight components in the pressure-sensitive adhesive layer 12 to be formed.

As the base polymer contained in the internal-type radiation-curable pressure-sensitive adhesive, it is preferable to use an acrylic polymer as a basic skeleton. As the acrylic polymer constituting such a basic skeleton, the above-described acrylic polymer can be employed. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, after copolymerizing a raw material monomer containing a monomer having a predetermined functional group (first functional group) to obtain an acrylic polymer, A condensation reaction of a compound having a radiation polymerizable carbon-carbon double bond and a predetermined functional group (second functional group) that can be bonded by reacting with an acrylic polymer while maintaining the radiation polymerizability of the carbon-carbon double bond. Or the method of making an addition reaction is mentioned.

Examples of the combination of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group and a hydroxy group. Among these combinations, a combination of a hydroxyl group and an isocyanate group or a combination of an isocyanate group and a hydroxyl group is suitable from the viewpoint of easiness of tracking the reaction. In addition, since it is technically difficult to produce a polymer having a highly reactive isocyanate group, from the viewpoint of easy production or availability of an acrylic polymer, the first functional group on the side of the acrylic polymer is a hydroxy group and the second functional group is an isocyanate group. case is more suitable. In this case, examples of the isocyanate compound having a radiation polymerizable carbon-carbon double bond and an isocyanate group as the second functional group include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, and m-isopropenyl- α,α-dimethylbenzyl isocyanate is exemplified. Further, as the acrylic polymer having a first functional group, those containing a monomer unit derived from the above hydroxy group-containing monomer are suitable, and 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl It is also suitable to include a monomer unit derived from an ether-based compound such as ether.

The radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, and thioxanthone compounds. compounds, camphorquinones, halogenated ketones, acylphosphine oxides and acylphosphonates. As an α-ketol compound, for example, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylacetophenone, 2-methyl -2-hydroxypropiophenone, and 1-hydroxycyclohexylphenyl ketone. As an acetophenone compound, for example, methoxy acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, and 2-methyl-1-[4-(methylthio)- phenyl] -2-morpholinopropane-1. As a benzoin ether type compound, benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether is mentioned, for example. As a ketal type compound, a benzyl dimethyl ketal is mentioned, for example. As an aromatic sulfonyl chloride type compound, 2-naphthalene sulfonyl chloride is mentioned, for example. As a photoactive oxime type compound, 1-phenone- 1, 2- propanedione- 2-(O-ethoxycarbonyl) oxime is mentioned, for example. Examples of the benzophenone-based compound include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of the thioxanthone-based compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, and 2,4-dichlorothioxanthone. xanthone, 2,4-diethylthioxanthone, and 2,4-diisopropylthioxanthone. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of a base polymer such as an acrylic polymer.

The heat-foaming type pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive containing a component (foaming agent, heat-expandable microsphere, etc.) that expands or expands when heated. Examples of the foaming agent include various inorganic and organic foaming agents, , Examples of thermally expandable microspheres include microspheres having a configuration in which a substance that easily gasifies and expands when heated is sealed in an outer shell. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium borohydride and azides. Examples of organic foaming agents include hydrofluoric alkanes such as trichloromonofluoromethane and dichloromonofluoromethane, azo compounds such as azobisisobutyronitrile, azodicarbonamide, and barium azodicarboxylate, para Hydrazine compounds such as toluenesulfonylhydrazide, diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis(benzenesulfonylhydrazide), and allylbis(sulfonylhydrazide), p - Semicarbazide compounds such as toluylenesulfonylsemicarbazide and 4,4'-oxybis(benzenesulfonylsemicarbazide), 5-morpholyl-1,2,3,4-thiatriazole triazole-based compounds such as the like, and N-nitroso-based compounds such as N,N'-dinitrosopentamethylenetetramine and N,N'-dimethyl-N,N'-dinitroso terephthalamide. Examples of substances that easily gasify and expand by heating for forming the above thermally expandable microspheres include isobutane, propane, and pentane. Thermally expandable microspheres can be produced by enclosing a substance that easily gasifies and expands when heated in a shell-forming substance by a coacervation method or an interfacial polymerization method. As the shell-forming material, a material exhibiting thermal melting properties or a material capable of being ruptured by the thermal expansion action of the encapsulating material can be used. Examples of such substances include vinylidene chloride/acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride and polysulfone.

Examples of the above-mentioned pressure-sensitive adhesive of a non-reduced adhesive force include a pressure-sensitive adhesive in which the radiation-curable pressure-sensitive adhesive described above in relation to the pressure-sensitive adhesive is previously cured by irradiation with radiation, a pressure-sensitive adhesive, and the like. In the adhesive layer 12 of this embodiment, one type of non-adhesive force reducing type adhesive may be used, and two or more types of adhesive force non-reducing type adhesive may be used. In addition, the entire pressure-sensitive adhesive layer 12 may be formed of a non-adhesive pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a non-adhesive pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a non-adhesive pressure-sensitive adhesive, and a predetermined portion of the pressure-sensitive adhesive layer 12 (e.g., a wafer The area to be bonded to the ring and the area outside the area to be bonded to the wafer) is formed of an adhesive with non-adhesive force, and the other portion (eg, the area to be adhered to, the central area of the wafer) is formed with an adhesive with reduced adhesive force. may be formed. In the case where the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers constituting the laminated structure may be formed of a non-adhesive pressure-sensitive adhesive, or some of the layers in the laminated structure may be formed of a non-adhesive pressure-sensitive adhesive.

A pressure-sensitive adhesive (irradiated radiation-curable pressure-sensitive adhesive) in a form in which a radiation-curable pressure-sensitive adhesive is previously cured by irradiation of radiation (irradiation-cured radiation-curable pressure-sensitive adhesive) exhibits adhesion due to a polymer component to be contained even when the adhesive force is reduced by irradiation, such as in a dicing process In this case, it is possible to exert the minimum required adhesive force on the dicing tape pressure-sensitive adhesive layer. In the present embodiment, in the case of using an irradiated radiation curable pressure-sensitive adhesive, the entire pressure-sensitive adhesive layer 12 may be formed of an irradiated radiation-curable pressure-sensitive adhesive in the surface expansion direction of the pressure-sensitive adhesive layer 12, and the pressure-sensitive adhesive layer A part of (12) may be formed of a radiation-curable pressure-sensitive adhesive that has been irradiated with radiation, and another part may be formed of a radiation-curable pressure-sensitive adhesive that has not been irradiated with radiation.

The dicing die-bonding film X including at least a part of the pressure-sensitive adhesive layer 12 with a radiation-curable pressure-sensitive adhesive that has been irradiated with radiation can be manufactured through the following process, for example. First, on the base material 11 of the dicing tape 10, a pressure-sensitive adhesive layer (radiation curable pressure-sensitive adhesive layer) made of a radiation-curable pressure-sensitive adhesive is formed. Then, a predetermined part or all of this radiation-curable pressure-sensitive adhesive layer is irradiated with radiation to form a pressure-sensitive adhesive layer 12 containing at least a part of the irradiated radiation-curable pressure-sensitive adhesive. Then, the adhesive layer used as the die-bonding film 20 mentioned later is formed on the said adhesive layer 12. The dicing die-bonding film X containing at least a part of the pressure-sensitive adhesive layer 12 a radiation-curable pressure-sensitive adhesive that has been irradiated with radiation can also be manufactured through the following process. First, on the base material 11 of the dicing tape 10, a pressure-sensitive adhesive layer (radiation curable pressure-sensitive adhesive layer) made of a radiation-curable pressure-sensitive adhesive is formed. Next, on this radiation-curable pressure-sensitive adhesive layer, an adhesive layer serving as the die-bonding film 20 described later is formed. Thereafter, a predetermined part or the whole of the radiation-curable pressure-sensitive adhesive layer is irradiated with radiation to form the pressure-sensitive adhesive layer 12 containing at least a part of the irradiated radiation-curable pressure-sensitive adhesive.

On the other hand, as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, a known or commonly used pressure-sensitive adhesive can be used, and an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive having an acrylic polymer as a base polymer can be suitably used. When the pressure-sensitive adhesive layer 12 contains an acrylic pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic pressure-sensitive adhesive preferably has the largest number of monomer units derived from (meth)acrylic acid ester in terms of mass ratio. include as As such an acrylic polymer, the acrylic polymer mentioned above regarding a radiation-curable adhesive is mentioned, for example.

The pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer may contain, in addition to the components described above, a crosslinking accelerator, a tackifier, an anti-aging agent, and a colorant such as a pigment or dye. The colorant may be a compound that is colored by irradiation with radiation. As such a compound, leuco dye is mentioned, for example.

The thickness of the pressure-sensitive adhesive layer 12 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably 5 to 25 μm. Such a configuration is, for example, in balancing the adhesive force to the die-bonding film 20 before and after radiation curing of the pressure-sensitive adhesive layer 12 when the pressure-sensitive adhesive layer 12 contains a radiation-curable pressure-sensitive adhesive. , Suitable.

As described above, the dicing tape 10 having a laminated structure including the substrate 11 and the pressure-sensitive adhesive layer 12 as described above is applied at an initial distance between chucks of 100 mm with respect to a dicing tape test piece having a width of 20 mm. is capable of exhibiting a tensile stress within the range of 15 to 32 MPa at at least a partial strain value in the range of 5 to 30% in a tensile test. In order to secure a sufficient tensile length when the dicing die bond film X provided with the dicing tape 10 is used in the expand process, with respect to the dicing tape 10, in the tensile test, 15 to 32 MPa The strain value that can show the tensile stress within the range is preferably 6% or more, more preferably 7% or more, and still more preferably 8% or more. In addition, in order to avoid that the tensile length required when the dicing die bond film X provided with the dicing tape 10 is used in the expand process becomes excessive, for the dicing tape 10, the tensile test The strain value capable of exhibiting tensile stress within the range of 15 to 32 MPa is preferably 20% or less, more preferably 17% or less, more preferably 15% or less, and still more preferably 13% or less. In addition, the tensile stress in the tensile test of the dicing tape 10 is within the range of 15 to 32 MPa as described above, preferably within the range of 20 to 32 MPa.

In the tensile test, the lower the temperature condition, the greater the tensile stress exhibited by the dicing tape 10 or its test piece. Therefore, the temperature condition in the tensile test is preferably -15°C. Further, the tensile speed conditions in the above tensile test are preferably within the range of 10 to 1000 mm/min, more preferably 100 to 1000 mm/min. That is, the dicing tape 10 has at least a partial deformation value in the range of 5 to 30%, preferably 6% or more, more preferably 7% or more, more 15 to 32 MPa at a strain value of preferably 8% or more and preferably 20% or less, more preferably 17% or less, still more preferably 15% or less, still more preferably 13% or less, more preferably 15 to 32 MPa is capable of representing a tensile stress within the range of 20 to 32 MPa.

The elastic modulus of the dicing tape 10 at -15°C is preferably 500 MPa or more, more preferably 700 MPa or more, still more preferably 900 MPa or more, still more preferably 1000 MPa or more. Such a configuration is suitable for generating a tensile stress within a range of 15 to 32 MPa with at least a partial deformation value in the range of 5 to 30% in the above tensile test for the dicing tape 10.

The die-bonding film 20 of the dicing die-bonding film X has a configuration capable of functioning as a thermosetting adhesive for die bonding. In this embodiment, the adhesive for forming the die-bonding film 20 may have a composition containing a thermosetting resin and, for example, a thermoplastic resin as a binder component, and is accompanied by a thermosetting functional group capable of reacting with a curing agent to generate bonding. You may have a composition containing a thermoplastic resin that does. When the adhesive for forming the die-bonding film 20 has a composition containing a thermoplastic resin having a thermosetting functional group, the pressure-sensitive adhesive does not need to contain a thermosetting resin (such as an epoxy resin). Such a die-bonding film 20 may have a single layer structure or may have a multilayer structure.

When the die-bonding film 20 contains a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting poly. Mead resin is mentioned. In order to form the die-bonding film 20, one type of thermosetting resin may be used, or two or more types of thermosetting resins may be used. An epoxy resin is preferable as the thermosetting resin included in the die-bonding film 20 because the content of ionic impurities or the like that may cause corrosion of semiconductor chips to be bonded tends to be low. Moreover, as a hardening|curing agent of an epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type, and glycidyl amine type epoxy resins. Novolak-type epoxy resins, biphenyl-type epoxy resins, trishydroxyphenylmethane-type epoxy resins, and tetraphenylolethane-type epoxy resins are highly reactive with phenol resins as a curing agent and have excellent heat resistance, so that die bonding It is preferable as an epoxy resin included in the film 20.

Phenol resins that can act as a curing agent for epoxy resins include, for example, novolak-type phenol resins, resol-type phenol resins, and polyoxystyrenes such as polyparaoxy styrene. Examples of the novolak-type phenolic resin include phenol novolac resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin. As the phenol resin that can act as a curing agent for the epoxy resin, one type of phenol resin may be used, or two or more types of phenol resins may be used. Since phenol novolak resins and phenol aralkyl resins tend to improve the connection reliability of the adhesive when used as a curing agent for an epoxy resin as an adhesive for die bonding, the epoxy resin included in the die bonding film 20 It is preferable as a curing agent for

In the die-bonding film 20, from the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin, the hydroxyl group in the phenol resin per equivalent of epoxy group in the epoxy resin component is preferably 0.5 to 2.0. equivalents, more preferably in an amount of 0.8 to 1.2 equivalents.

Examples of the thermoplastic resin included in the die-bonding film 20 include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, and polybutadiene. resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and A fluororesin is mentioned. In order to form the die-bonding film 20, one type of thermoplastic resin may be used, or two or more types of thermoplastic resins may be used. As the thermoplastic resin included in the die-bonding film 20, an acrylic resin is preferable because it has few ionic impurities and high heat resistance, so that reliability of bonding by the die-bonding film 20 is easy to be secured.

The acrylic resin contained as the thermoplastic resin in the die-bonding film 20 preferably contains a monomer unit derived from (meth)acrylic acid ester as the main monomer unit in the largest proportion in terms of mass ratio. As such a (meth)acrylic acid ester, for example, the same (meth)acrylic acid ester as described above for the acrylic polymer, which is a component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12, can be used. The acrylic resin contained as a thermoplastic resin in the die-bonding film 20 may contain a monomer unit derived from another monomer copolymerizable with (meth)acrylic acid ester. Examples of such other monomer components include functional group-containing monomers such as carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide and acrylonitrile; , various multifunctional monomers, and specifically, the same as those described above as other monomers copolymerizable with (meth)acrylic acid ester for the acrylic polymer, which is one component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12. can be used From the viewpoint of realizing high cohesive force in the die-bonding film 20, the acrylic resin contained in the die-bonding film 20 is preferably a (meth)acrylic acid ester (in particular, an alkyl group having 4 or less carbon atoms (meth) ) alkyl ester of acrylic acid), a carboxy group-containing monomer, a nitrogen atom-containing monomer, and a multifunctional monomer (especially a polyglycidyl-based multifunctional monomer), more preferably ethyl acrylate, butyl acrylate, and acrylic acid and a copolymer of acrylonitrile and polyglycidyl (meth)acrylate.

The content ratio of the thermosetting resin in the die-bonding film 20 is preferably 5 to 60% by mass, more preferably 10% by mass, from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the die-bonding film 20. to 50% by mass.

When the die-bonding film 20 contains a thermoplastic resin having a thermosetting functional group, as the thermoplastic resin, for example, a thermosetting functional group-containing acrylic resin can be used. The acrylic resin for forming this thermosetting functional group-containing acrylic resin preferably contains a monomer unit derived from (meth)acrylic acid ester as the main monomer unit in the largest proportion in terms of mass ratio. As such a (meth)acrylic acid ester, for example, the same (meth)acrylic acid ester as described above for the acrylic polymer, which is a component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12, can be used. On the other hand, as a thermosetting functional group for forming a thermosetting functional group containing acrylic resin, a glycidyl group, a carboxy group, a hydroxyl group, and an isocyanate group are mentioned, for example. Among these, a glycidyl group and a carboxy group can be used suitably. That is, as the acrylic resin containing a thermosetting functional group, an acrylic resin containing a glycidyl group or an acrylic resin containing a carboxy group can be suitably used. As the curing agent for the thermosetting functional group-containing acrylic resin, for example, the external crosslinking agent that may be a component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be used. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenolic compound can be suitably used as a curing agent, and for example, various phenolic resins described above can be used.

In order to realize a certain degree of crosslinking with respect to the die-bonding film 20 before curing for die-bonding, for example, the aforementioned resin contained in the die-bonding film 20 reacts with and binds to functional groups at molecular chain terminals. It is preferable to blend a polyfunctional compound capable of forming a cross-linking agent into the resin composition for forming a die-bonding film. Such a configuration is suitable for improving the adhesive properties of the die-bonding film 20 under high temperatures and also for improving the heat resistance. As such a crosslinking agent, a polyisocyanate compound is mentioned, for example. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and an adduct of a polyhydric alcohol and diisocyanate. The content of the crosslinking agent in the resin composition for forming a die-bonding film is preferably from the viewpoint of improving the cohesive force of the die-bonding film 20 formed relative to 100 parts by mass of the resin having the above-mentioned functional group capable of reacting and bonding with the crosslinking agent. is 0.05 parts by mass or more, and is preferably 7 parts by mass or less from the viewpoint of improving the adhesion of the formed die-bonding film 20. In addition, as a crosslinking agent in the die-bonding film 20, you may use another polyfunctional compound, such as an epoxy resin, together with a polyisocyanate compound.

The die-bonding film 20 may contain a filler. Physical properties such as conductivity, thermal conductivity, and modulus of elasticity of the die-bonding film 20 can be adjusted by mixing the filler in the die-bonding film 20 . Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are particularly preferred. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. , simple metals such as aluminum, gold, silver, copper, and nickel, alloys, amorphous carbon black, and graphite. The filler may have various shapes, such as a spherical shape, a needle shape, and a flake shape. As the filler in the die-bonding film 20, one type of filler may be used, or two or more types of fillers may be used.

When the die-bonding film 20 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. The configuration that the average particle diameter of the filler is 0.005 μm or more is suitable for realizing high wettability and adhesiveness to adherends such as semiconductor wafers in the die-bonding film 20 . The configuration that the average particle size of the filler is 10 μm or less is suitable for securing heat resistance while enjoying sufficient filler addition effects in the die-bonding film 20 . The average particle diameter of the filler can be obtained using, for example, a photometric particle size distribution analyzer (trade name "LA-910", manufactured by Horiba Seisakusho Co., Ltd.).

The adhesive layer 20 may contain other components as needed. As said other component, a flame retardant, a silane coupling agent, and an ion trapping agent are mentioned, for example. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resins. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. there is. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, hydrous antimony oxide (for example, "IXE-300" manufactured by Toagosei Co., Ltd.), zirconium phosphate having a specific structure (for example, Toagosei Co., Ltd. "IXE-100" manufactured by Kaisha), magnesium silicate (eg "Kyowad 600" manufactured by Kyowa Chemical Industry Co., Ltd.) and aluminum silicate (eg "Kyowa Chemical Industry Co., Ltd." Kyoward 700”). A compound capable of forming a complex between metal ions can also be used as an ion trapping agent. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridyl-based compounds. Among these, from the viewpoint of the stability of the complex formed with the metal ion, a triazole-based compound is preferable. Examples of such triazole-based compounds include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, carboxybenzotriazole, and 2-(2- Hydroxy-5-methylphenyl) benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3-t- Butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3, 5-di-t-amylphenyl)benzotriazole, 2-(2-hydroxy-5-t-octyl Phenyl) benzotriazole, 6-(2-benzotriazole)-4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1-(2',3' -hydroxypropyl) benzotriazole, 1-(1,2-dicarboxydiethyl)benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-t-pentyl-6 -{(H-benzotriazol-1-yl)methyl}phenol, 2-(2-hydroxy-5-t-butylphenyl)-2H-benzotriazole, C7-C9-alkyl-3-[3- (2H-benzotriazol-2-yl)-5-(1,1-dimethylethyl)-4-hydroxyphenyl]propion ether, octyl-3-[3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-ethylhexyl-3-[3-t-butyl-4-hydroxy-5-(5-chloro-2H-benzo Triazol-2-yl)phenyl]propionate, 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1,1,3,3 -Tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-t-butylphenol, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy) Roxy-5-t-octylphenyl)-benzotriazole, 2-(3-t-butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3, 5-di-t-amylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chloro-benzotriazole, 2-[2-hydroxy-3 ,5-di(1,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazol-2-yl)-4-(1,1, 3,3-tetramethylbutyl)phenol], 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl]-2H-benzotriazole, and methyl-3-[3-( 2H-Ben Zotriazol-2-yl) -5-t-butyl-4-hydroxyphenyl] propionate. In addition, predetermined hydroxyl group-containing compounds, such as quinol compounds, hydroxy anthraquinone compounds, and polyphenol compounds, can also be used as the ion trapping agent. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthralupin, tannin, gallic acid, methyl gallate, pyrogallol and the like. As the above other components, one type of component may be used, and two or more types of components may be used.

The thickness of the die-bonding film 20 is in the range of 1 to 200 μm, for example. The upper limit of the thickness is preferably 100 μm, more preferably 80 μm. The lower limit of the thickness is preferably 3 μm, more preferably 5 μm.

The dicing die-bonding film X having the above structure can be produced, for example, as follows.

About the dicing tape 10 of the dicing die-bonding film X, it can produce by providing the adhesive layer 12 on the prepared base material 11. For example, the base material 11 made of resin can be produced by a film forming method such as a calender film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a coextrusion method, or a dry lamination method. can For the pressure-sensitive adhesive layer 12, after preparing the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer 12, the pressure-sensitive adhesive composition is applied on the substrate 11 or on a predetermined separator (ie, a release liner) to form the pressure-sensitive adhesive composition layer, if necessary. It can be formed by removing the solvent or the like to the pressure-sensitive adhesive composition layer according to the method (at this time, heat-crosslinking as necessary). As a method of applying the pressure-sensitive adhesive composition, for example, roll coating, screen coating, and gravure coating may be used. The temperature for desolvation of the pressure-sensitive adhesive composition layer is, for example, 80 to 150° C., and the time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 12 is formed on the separator, the pressure-sensitive adhesive layer 12 with the separator is bonded to the base material 11 . As described above, the dicing tape 10 can be produced.

For the die-bonding film 20 of the dicing die-bonding film X, after preparing an adhesive composition for forming the die-bonding film 20, the adhesive composition is applied on a predetermined separator to form an adhesive composition layer, if necessary. Accordingly, the adhesive composition layer can be produced by removing the solvent or the like. Examples of the application method of the adhesive composition include roll application, screen application, and gravure application. The temperature for desolvation of the adhesive composition layer is, for example, 70 to 160° C., and the time is, for example, 1 to 5 minutes.

In production of the dicing die-bonding film X, the die-bonding film 20 is bonded to the pressure-sensitive adhesive layer 12 side of the dicing tape 10 by pressure bonding, for example. The bonding temperature is, for example, 30 to 50°C, preferably 35 to 45°C. The joining pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm, preferably 1 to 10 kgf/cm. When the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer as described above, when radiation such as ultraviolet rays is irradiated to the pressure-sensitive adhesive layer 12 after bonding of the die-bonding film 20, for example, the base material 11 Radiation is irradiated to the pressure-sensitive adhesive layer 12 from the side, and the irradiation amount is, for example, 50 to 500 mJ/cm 2 , preferably 100 to 300 mJ/cm 2 . In the dicing die-bonding film X, the area where irradiation is performed as a measure for reducing the adhesive force of the pressure-sensitive adhesive layer 12 (irradiation area R) is usually the periphery of the area within the bonded area of the die-bonding film 20 in the pressure-sensitive adhesive layer 12. area excluding wealth.

As described above, for example, the dicing die-bonding film X shown in FIG. 1 can be produced. In the dicing die-bonding film X, a separator (not shown) may be provided on the die-bonding film 20 side so as to cover at least the die-bonding film 20 . When the size of the die-bonding film 20 is smaller than that of the pressure-sensitive adhesive layer 12 of the dicing tape 10 and there is an area where the die-bonding film 20 is not bonded in the pressure-sensitive adhesive layer 12, for example, The separator may be provided in a form that covers at least the die-bonding film 20 and the pressure-sensitive adhesive layer 12 . The separator is an element for protecting at least the die-bonding film 20 (for example, the die-bonding film 20 and the pressure-sensitive adhesive layer 12) from being exposed, and when using the dicing die-bonding film X, from the film. peeled off Examples of the separator include polyethylene terephthalate (PET) films, polyethylene films, polypropylene films, plastic films and papers surface-coated with release agents such as fluorine-based release agents and long-chain alkyl acrylate-based release agents.

2 to 7 show a semiconductor device manufacturing method according to an embodiment of the present invention.

In this semiconductor device manufacturing method, first, as shown in Figs. 2(a) and 2(b), divided grooves 30a are formed in the semiconductor wafer W (divided groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been formed on the side of the first surface Wa of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements have already been formed on the first surface Wa. In this process, after the tape T1 for a wafer process which has adhesive surface T1a is bonded to the 2nd surface Wb side of the semiconductor wafer W, the 1st surface Wa of the semiconductor wafer W is in the state where the semiconductor wafer W was hold|maintained by the tape T1 for a wafer process. Divided grooves 30a of a predetermined depth are formed on the side using a rotary blade of a dicing device or the like. The division grooves 30a are voids for separating the semiconductor wafer W into semiconductor chip units (the division grooves 30a are schematically indicated by thick lines in Figs. 2 to 4).

Next, as shown in (c) of FIG. 2, bonding of the tape T2 for a wafer process having an adhesive surface T2a to the first surface Wa side of the semiconductor wafer W and the tape T1 for a wafer process from the semiconductor wafer W Peeling is done.

Next, as shown in (d) of FIG. 2, in the state where the semiconductor wafer W is held by the tape T2 for wafer processing, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. (wafer thinning process). Grinding can be performed using a grinding machine equipped with a grindstone. By this wafer thinning process, in the present embodiment, a semiconductor wafer 30A that can be divided into a plurality of semiconductor chips 31 is formed. Specifically, the semiconductor wafer 30A has a portion (connection portion) that connects portions of the wafer to be divided into a plurality of semiconductor chips 31 on the second surface Wb side. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip on the second surface Wb side of the divided groove 30a is, for example, 1 to 30 μm. , preferably 3 to 20 μm.

Next, as shown in (a) of FIG. 3, the semiconductor wafer 30A held by the tape T2 for a wafer process is bonded to the die-bonding film 20 of the dicing die-bonding film X. After that, as shown in FIG.3(b), tape T2 for a wafer process is peeled from 30 A of semiconductor wafers. When the pressure-sensitive adhesive layer 12 in the dicing die-bonding film X is a radiation-curable pressure-sensitive adhesive layer, instead of the above-described radiation irradiation in the manufacturing process of the dicing die-bonding film X, the die-bonding film of the semiconductor wafer 30A ( After bonding to 20), you may irradiate radiation, such as an ultraviolet-ray, with respect to the adhesive layer 12 from the base material 11 side. The irradiation amount is, for example, 50 to 500 mJ/cm 2 , preferably 100 to 300 mJ/cm 2 . In the dicing die-bonding film X, the area where irradiation is performed as a measure for reducing the adhesive force of the pressure-sensitive adhesive layer 12 (irradiation area R shown in FIG. 1 ) is, for example, the die-bonding film 20 in the pressure-sensitive adhesive layer 12 ) is an area excluding the periphery within the joint area.

Next, after the ring frame 41 is adhered on the pressure-sensitive adhesive layer 12 of the dicing tape 10 in the dicing die bond film X, as shown in FIG. 4(a), the semiconductor wafer 30A ) is fixed to the holder 42 of the expander.

Next, a first expand process (cool expand process) under relatively low temperature conditions is performed as shown in FIG. 4(b), and the semiconductor wafer 30A is divided into a plurality of semiconductor chips 31 While being formed, the die-bonding film 20 of the dicing die-bonding film X is cut into small die-bonding films 21 to obtain a semiconductor chip 31 with a die-bonding film. In this step, the hollow columnar pushing member 43 provided in the expander is lifted against the dicing tape 10 at the lower side of the dicing die-bonding film X in the drawing, and the semiconductor wafer 30A ) is bonded, the dicing tape 10 of the dicing die bonding film X is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed under the condition that tensile stress within the range of 15 to 32 MPa, preferably 20 to 32 MPa, is generated in the dicing tape 10. The temperature conditions in the cool expand process are, for example, 0°C or less, preferably -20 to -5°C, more preferably -15 to -5°C, and still more preferably -15°C. The expand speed (the speed at which the lifting member 43 rises) in the cool expand process is preferably 0.1 to 100 mm/sec. In addition, the expand amount in the cool expand process is preferably 3 to 16 mm.

In this process, cutting occurs at a thin and brittle portion of the semiconductor wafer 30A, resulting in the semiconductor chip 31 being chipped. At the same time, in this step, deformation is suppressed in each region where each semiconductor chip 31 is in close contact in the die-bonding film 20 in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded. On the other hand, tensile stress generated in the dicing tape 10 acts on the portion facing the divided groove between the semiconductor chips 31 in a state where such a deformation suppressing effect does not occur. As a result, in the die-bonding film 20, the portion facing the dividing groove between the semiconductor chips 31 is cut. After this step, as shown in Fig. 4(c), the pushing member 43 is lowered and the expanded state of the dicing tape 10 is released.

Next, the second expand process is performed under relatively high temperature conditions as shown in Fig. 5(a), and the distance (separation distance) between the semiconductor chips 31 with die-bonding films is expanded. In this step, the hollow columnar pushing member 43 of the expander is raised again, and the dicing tape 10 of the dicing die-bonding film X is expanded. The temperature conditions in the second expand process are, for example, 10°C or higher, and preferably 15 to 30°C. The expand speed (speed at which the lifting member 43 rises) in the second expand process is, for example, 0.1 to 10 mm/sec, preferably 0.3 to 1 mm/sec. In addition, the expand amount in the 2nd expand process is 3-16 mm, for example. In this step, the separation distance of the semiconductor chip 31 with the die-bonding film can be extended to the extent that the semiconductor chip 31 with the die-bonding film can be appropriately picked up from the dicing tape 10 in the pick-up step described later. After this step, as shown in Fig. 5(b), the pushing member 43 is lowered and the expanded state of the dicing tape 10 is released. In order to suppress the narrowing of the separation distance of the semiconductor chip 31 with the die-bonding film on the dicing tape 10 after release of the expanded state, prior to release of the expanded state, in the dicing tape 10 It is preferable to heat and shrink a portion outside the holding area of the semiconductor chip 31 .

6 As shown, the semiconductor chip 31 with a die-bonding film is picked up from the dicing tape 10 (pickup step). For example, with respect to the semiconductor chip 31 with the die-bonding film to be picked up, the pin member 44 of the pick-up mechanism is raised from the lower side in the drawing of the dicing tape 10 and pushed through the dicing tape 10. After raising, it is adsorbed and held by the adsorption jig 45. In the pick-up process, the pushing speed of the pin member 44 is, for example, 1 to 100 mm/sec, and the pushing amount of the pin member 44 is, for example, 50 to 3000 μm.

Next, as shown in (a) of FIG. 7 , the semiconductor chip 31 with the die-bonding film picked up is temporarily fixed to the predetermined adherend 51 via the die-bonding film 21 . Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately produced semiconductor chip. The shear adhesive force at 25°C during temporary fixing of the die-bonding film 21 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 51 . The configuration that the shear adhesive strength of the die-bonding film 21 is 0.2 MPa or more is such that the die-bonding film 21 and the semiconductor chip 31 or the adherend 51 are bonded by ultrasonic vibration or heating in a wire bonding process described later. It is suitable for properly performing wire bonding by suppressing the occurrence of shear deformation on the bonding surface of the adhesive. In addition, the shear adhesive strength at 175° C. at the time of temporary fixing of the die-bonding film 21 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa with respect to the adherend 51 .

Next, as shown in (b) of FIG. 7 , an electrode pad (not shown) of the semiconductor chip 31 and a terminal portion (not shown) of the adherend 51 are electrically connected through a bonding wire 52 . Connect (wire bonding process). The connection between the electrode pad of the semiconductor chip 31 and the terminal portion of the adherend 51 and the bonding wire 52 is realized by ultrasonic welding with heating, so as not to thermally cure the die-bonding film 21. . As the bonding wire 52, a gold wire, an aluminum wire, or a copper wire can be used, for example. The wire heating temperature in wire bonding is, for example, 80 to 250°C, preferably 80 to 220°C. In addition, the heating time is several seconds to several minutes.

Next, as shown in FIG. 7(c), the semiconductor chip 31 is sealed by the sealing resin 53 for protecting the semiconductor chip 31 or the bonding wire 52 on the adherend 51. It is sealed (sealing process). In this step, thermal curing of the die-bonding film 21 proceeds. In this step, the sealing resin 53 is formed by, for example, a transfer molding technique using a mold. As a constituent material of the sealing resin 53, an epoxy resin can be used, for example. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185°C, and the heating time is, for example, 60 seconds to several minutes. When hardening of the sealing resin 53 does not sufficiently progress in this process (sealing process), a post-curing process for completely hardening the sealing resin 53 is performed after this process. Even when the die-bonding film 21 is not completely thermally cured in the sealing step, the die-bonding film 21 can be completely thermally cured together with the sealing resin 53 in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185°C, and the heating time is, for example, 0.5 to 8 hours.

As described above, a semiconductor device can be manufactured.

In this embodiment, as described above, after the semiconductor chip 31 with the die-bonding film is temporarily fixed to the adherend 51, the wire bonding step is performed without the die-bonding film 21 being completely cured by heat. . Instead of such a configuration, in the present invention, the wire bonding step may be performed after the semiconductor chip 31 with the die-bonding film is temporarily fixed to the adherend 51 and then the die-bonding film 21 is thermally cured.

In the semiconductor device manufacturing method according to the present invention, the wafer thinning step shown in FIG. 8 may be performed instead of the wafer thinning step described above with reference to FIG. 2(d). After going through the process described above with reference to FIG. 2(c), in the wafer thinning process shown in FIG. 8, the semiconductor wafer W is held on the wafer processing tape T2 until the wafer reaches a predetermined thickness. It is thinned by the grinding process from 2-surface Wb, and the semiconductor wafer division body 30B hold|maintained by the tape T2 for a wafer process is formed including the some semiconductor chip 31. In this step, a method of grinding the wafer until the split groove 30a itself is exposed on the second surface Wb side (Method 1) may be employed, or the split groove 30a is reached from the second surface Wb side. A method of forming a semiconductor wafer division body 30B by grinding the wafer until the previous step, and then generating a crack between the division groove 30a and the second surface Wb by the action of the pressing force on the wafer from the grinding wheel ( The second method) may be employed. Depending on the method employed, the depth of the divided grooves 30a formed as described above with reference to Figs. 2(a) and 2(b) from the first surface Wa is appropriately determined. In FIG. 8, the divided groove 30a passed through the 1st method or the divided groove 30a passed through the 2nd method, and the crack following this are typically shown with a thick line. In the present invention, after the semiconductor wafer division body 30B produced in this way is bonded to the dicing die bond film X instead of the semiconductor wafer 30A, each step described above with reference to FIGS. 3 to 7 is performed, can also

Fig.9 (a) and FIG.9(b) show the 1st expand process (cool expand process) performed after the semiconductor wafer division body 30B is bonded to the dicing die-bonding film X. In this step, the hollow columnar pushing member 43 provided in the expander is lifted against the dicing tape 10 on the lower side of the dicing die-bonding film X in the drawing, and the semiconductor wafer divided body is lifted. (30B) The dicing tape 10 of the bonded dicing die-bonding film X is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer division body 30B. This expansion is performed under the condition that tensile stress within the range of 15 to 32 MPa, preferably 20 to 32 MPa, is generated in the dicing tape 10. The temperature conditions in this step are, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and still more preferably -15°C. The expand speed (the speed at which the lifting member 43 rises) in this step is preferably 1 to 500 mm/sec. In addition, the expand amount in this process is preferably 1 to 10 mm. By this cool expand process, the die-bonding film 20 of the dicing die-bonding film X is cut into small die-bonding films 21, and the semiconductor chip 31 with a die-bonding film is obtained. Specifically, in this step, in the die bonding film 20 adhering to the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded, each semiconductor chip 31 of the semiconductor wafer division body 30B is While deformation is suppressed in each region in close contact with each other, in a location opposite to the divided groove 30a between the semiconductor chips 31, such a deformation suppression action does not occur, and the dicing tape 10 Tensile stress acts. As a result, in the die-bonding film 20, the portion facing the divided groove 30a between the semiconductor chips 31 is cut.

In the semiconductor device manufacturing method according to the present invention, instead of the above configuration in which the semiconductor wafer 30A or the semiconductor wafer divided body 30B is bonded to the dicing die bond film X, the semiconductor wafer 30C produced as follows ) may be bonded to the dicing die bond film X.

As shown in FIG. 10(a) and FIG. 10(b), first, a modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been formed on the side of the first surface Wa of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements have already been formed on the first surface Wa. In this step, after the tape T3 for wafer processing having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, in a state where the semiconductor wafer W is held by the tape T3 for wafer processing, the laser beam whose light condensing point is aligned inside the wafer The semiconductor wafer W is irradiated from the side opposite to the tape T3 for wafer processing along the line to be divided, and a modified region 30b is formed in the semiconductor wafer W by ablation by multiphoton absorption. The modified region 30b is a weakened region for isolating the semiconductor wafer W into semiconductor chip units. A method of forming the modified region 30b on the line to be divided by laser light irradiation in a semiconductor wafer is described in detail, for example, in Japanese Patent Laid-Open No. 2002-192370. Light irradiation conditions are suitably adjusted within the range of the following conditions, for example.

<Laser light irradiation conditions>

(A) laser light

Laser light source Semiconductor laser excitation Nd:YAG laser

Wavelength 1064nm

Laser light spot cross-sectional area 3.14×10 ^-8 ㎠

Oscillation form Q switch pulse

Repetition frequency 100 kHz or less

Pulse width 1 μs or less

Output less than 1mJ

Laser light quality TEM00

Polarization Characteristic Linear Polarization

(B) condensing lens

Magnification 100x or less

NA 0.55

Transmittance to laser light wavelength 100% or less

(C) The moving speed of the loading table on which the semiconductor substrate is loaded is 280 mm/sec or less

Next, as shown in FIG. 10(c), in the state where the semiconductor wafer W is held by the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. As a result, a semiconductor wafer 30C that can be singulated into a plurality of semiconductor chips 31 is formed (wafer thinning process). In the present invention, after the semiconductor wafer 30C manufactured as described above is bonded to the dicing die bond film X instead of the semiconductor wafer 30A, each step described above with reference to FIGS. 3 to 7 may be performed. .

Fig.11 (a) and FIG.11(b) show the 1st expand process (cool expand process) performed after the semiconductor wafer 30C is bonded to the dicing die-bonding film X. In this step, the hollow columnar pushing member 43 provided in the expander is lifted against the dicing tape 10 on the lower side of the dicing die-bonding film X in the drawing, and the semiconductor wafer 30C is lifted. ) is bonded, the dicing tape 10 of the dicing die bonding film X is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expansion is performed under conditions in which tensile stress within the range of 15 to 32 MPa, preferably 20 to 32 MPa, is generated in the dicing tape 10. The temperature conditions in this step are, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and still more preferably -15°C. The expand speed (the speed at which the lifting member 43 rises) in this step is preferably 0.1 to 100 mm/sec. In addition, the expand amount in this process is preferably 1 to 10 mm. By this cool expand process, the die-bonding film 20 of the dicing die-bonding film X is cut into small die-bonding films 21, and the semiconductor chip 31 with a die-bonding film is obtained. Specifically, in this process, a crack is formed in the weak modified region 30b of the semiconductor wafer 30C, and the semiconductor chip 31 is singulated. At the same time, in this step, each semiconductor chip 31 of the semiconductor wafer 30C is in close contact with the die-bonding film 20 that is in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded. While deformation is suppressed in each region where there is a crack, tensile stress generated in the dicing tape 10 acts on the portion opposite to the crack formation portion of the wafer in a state where such a deformation suppressing action does not occur. As a result, in the die-bonding film 20, the location opposite to the crack formation location between the semiconductor chips 31 is cut.

Further, in the present invention, the dicing die-bonding film X can be used to obtain a semiconductor chip with a die-bonding film as described above, a die in the case of three-dimensional mounting by laminating a plurality of semiconductor chips. It can also be used to obtain a semiconductor chip with a bond film. Between the semiconductor chips 31 in such a three-dimensional mounting, a spacer may be interposed together with the die-bonding film 21, or no spacer may be interposed.

In the expand process performed using a dicing die-bonding film to obtain a semiconductor chip with a die-bonding film, the tensile stress generated in the dicing tape expanded from the dicing die-bonding film is 15 MPa or more and 32 MPa or less, It is suitable for cutting the die-bonding film by applying tensile stress as a sufficient cutting force to the die-bonding film from the dicing tape in the pan, and the residue acting on the die-bonding film after cutting from the dicing tape after expansion. The present inventors found that it is suitable for avoiding excessive stress and suppressing lifting and peeling of the film or semiconductor chip with the film from the dicing tape. For example, it is as showing by the Example and comparative example mentioned later. Then, in the above-described first expand step, that is, the cool expand step of the semiconductor device manufacturing method according to the present invention, a die carrying the semiconductor wafer division body 30B or the semiconductor wafer 30A on the die bond film 20 side. In the dicing tape 10 of the single die-bonding film X, the dicing tape 10 is expanded under the condition that a tensile stress within a range of 15 to 32 MPa is generated. In this semiconductor device manufacturing method including such an expand step, the die-bonding film 20 on the dicing tape 10 is properly cut, and each semiconductor chip 31 with the die-bonding film after cutting is cut. It is suitable for suppressing lifting or peeling from the dicing tape 10 against the surface.

In the above-described cool expand process (first expand process), the lower the temperature condition is, the higher the tensile stress generated in the dicing tape 10 tends to be. As described above, it is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and even more preferably -15°C. According to this configuration, the cool expand process (first expand process) for cutting the relatively large tensile stress generated under relatively low temperature conditions with respect to the dicing tape 10 expanded in the cool expand process. After using it as a cutting force for the die-bonding film 20 in the second expand process for lengthening the separation distance of the semiconductor chip 31 with the die-bonding film after cutting at a relatively high temperature (eg, room temperature) Under the conditions, it is possible to perform while suppressing the tensile stress generated by the dicing tape.

The dicing tape 10 in the dicing die-bonding film X used in the above-described semiconductor device manufacturing method has a strain value of 5% or more suitable for securing a sufficient tensile length for generating a cleavage in the die-bonding film 20. , and is at least a part of the strain value in the range of 30% or less of the strain value suitable for efficiently carrying out the expand process by avoiding the excessive tensile length in the expand process, and as described above, 15 to 32 MPa Tensile stress within the range can be expressed. This dicing tape 10 is an expand process for expanding under the condition that a tensile stress within the range of 15 to 32 MPa occurs in the form in which the die bond film 20 adheres to the pressure-sensitive adhesive layer 12 side. It is suitable for use in (the above-mentioned cool expand process), and therefore, while cutting well with respect to the die-bonding film 20 on the dicing tape 10 in the said expand process, each die bond after cutting It is suitable for suppressing lifting and peeling from the dicing tape 10 with respect to the semiconductor chip 31 with a film.

As described above, the dicing tape 10 has a deformation value of 5% or more, preferably 6% or more, more preferably 7% or more, more preferably 8% or more in the tensile test, In addition, a tensile stress in the range of 15 to 32 MPa is shown in the range of 30% or less, preferably 20% or less, more preferably 17% or less, more preferably 15% or less, still more preferably 13% or less. can When such a dicing tape 10 is used in an expand process in a form in which the die bond film 20 is in close contact with the pressure-sensitive adhesive layer 12 side, it is possible to prevent the length from being excessively stretched while securing a sufficient tensile length. In order to avoid, it is suitable to generate tensile stress in the range of 15 to 32 MPa.

As described above, the tensile stress that the dicing tape 10 can exhibit in the above tensile test is preferably in the range of 20 to 32 MPa. This dicing tape 10, in the form in which the die-bonding film 20 adheres to the pressure-sensitive adhesive layer 12 side, expands under the condition that a tensile stress within the range of 20 to 32 MPa is generated. (the aforementioned cool expand process). In the expanding process, the greater the tensile stress generated in the dicing tape 10 expanded in the dicing die-bonding film X exceeds 15 MPa, the larger the die-bonding film 20 from the dicing tape 10 during expansion. ), the tensile stress acting as a cutting force tends to be large.

In the above tensile test of the dicing tape 10, the lower the temperature condition is, the higher the tensile stress exhibited by the dicing tape 10 or its test piece tends to be. It is preferably 0°C or lower, more preferably -20 to -5°C, more preferably -15 to -5°C, still more preferably -15°C. According to such a configuration, the die-bonding film in the cool expand (first expand process) for cutting the relatively large tensile stress generated under a relatively low temperature condition with respect to the dicing tape 10 to be expanded ( 20), and then a second expand process (second expand process) for lengthening the separation distance of the semiconductor chips 31 with die bond films after cutting is carried out at a relatively high temperature (e.g., room temperature). ), it is possible to perform while suppressing the tensile stress generated by the dicing tape.

As described above, the tensile speed conditions in the above tensile test for the dicing tape 10 are preferably in the range of 10 to 1000 mm/min, more preferably in the range of 100 to 1000 mm/min. From the viewpoint of the process speed in the case where the dicing tape 10 is used in the expand process in the form in which the die-bonding film 20 adheres to the pressure-sensitive adhesive layer 12 side, as well as the productivity of the semiconductor device, the dicing tape ( In 10), the tensile speed condition of the tensile test for generating a tensile stress within the range of 15 to 32 MPa at a predetermined strain value is preferably 10 mm/min or more, more preferably 100 mm/min or more. From the viewpoint of avoiding breakage when the dicing tape 10 is used in the expand process in a form in which the die bond film 20 adheres to the pressure-sensitive adhesive layer 12 side, in the dicing tape 10 The tensile speed condition of the above tensile test for generating a tensile stress within a range of 15 to 32 MPa at a predetermined strain value is preferably 1000 mm/min or less, more preferably 300 mm/min or less.

Example

[Example 1]

<Production of dicing tape>

In a reaction vessel equipped with a cooling tube, a nitrogen inlet tube, a thermometer, and a stirring device, 100 parts by mass of 2-ethylhexyl acrylate, 19 parts by mass of 2-hydroxyethyl acrylate, and 0.4 mass parts of benzoyl peroxide as a polymerization initiator part, and a mixture containing 80 parts by mass of toluene as a polymerization solvent was stirred at 60°C for 10 hours in a nitrogen atmosphere (polymerization reaction). In this way, a polymer solution containing the acrylic polymer P1 was obtained. Subsequently, after adding 1.2 mass parts of 2-methacryloyloxyethyl isocyanate to this polymer solution, the said solution was stirred in air atmosphere at 50 degreeC for 60 hours (addition reaction). In this way, a polymer solution containing the acrylic polymer P2 was obtained. Next, to this polymer solution, 1.3 parts by mass of a polyisocyanate compound (trade name “Coronate L”, manufactured by Nippon Polyurethane Co., Ltd.) and 3 parts by mass of a photopolymerization initiator (trade name “Irgacure”) were added to 100 parts by mass of the acrylic polymer P2. 184", manufactured by BASF) was added to prepare an adhesive solution (Adhesive Solution S1). Subsequently, the adhesive solution S1 was applied on the silicone-treated surface of the PET release liner having the silicon-treated side to form a coating film, and the coating film was heated at 120° C. for 2 minutes to remove the solvent, and the adhesive layer having a thickness of 10 μm was formed. Next, a polyvinyl chloride substrate (trade name “V9K”, thickness 100 μm, manufactured by Achilles Corporation) was bonded to the exposed surface of the pressure-sensitive adhesive layer, and then stored at 23° C. for 72 hours, followed by dicing tape. Got it. As described above, the dicing tape of Example 1 having a laminated structure including a base material and an adhesive layer was produced.

[Example 2]

A polyolefin-based substrate (trade name "DDZ", thickness 90 μm, manufactured by Gunze Co., Ltd.) having a three-layer structure in a polypropylene film/polyethylene film/polypropylene film was mixed with a polyvinyl chloride substrate (trade name "V9K", Achilles Co., Ltd.) A dicing tape of Example 2 was produced in the same manner as in Example 1 except that it was used instead of production).

[Comparative Example 1]

Except for using an ethylene-vinyl acetate copolymer substrate (trade name "NED", thickness 125 μm, manufactured by Gunze Co., Ltd.) instead of the polyvinyl chloride substrate (trade name "V9K", manufactured by Achilles Co., Ltd.), in the same manner as in Example 1 Thus, a dicing tape of Comparative Example 1 was produced.

[Comparative Example 2]

Example except that an ethylene-vinyl acetate copolymer base material (trade name "RB0104", thickness 130 µm, manufactured by Kurashiki Boseki Co., Ltd.) was used instead of the polyvinyl chloride base material (trade name "V9K", manufactured by Achilles Co., Ltd.) In the same manner as in 1, the dicing tape of Comparative Example 2 was produced.

[Example 3]

<Production of die bond film>

100 parts by mass of an acrylic resin (trade name “SG-708-6”, glass transition temperature (Tg) 4° C., manufactured by Nagase Chemtex Co., Ltd.), and an epoxy resin (trade name “JER828”, liquid at 23° C., manufactured by Mitsubishi Chemical Co., Ltd.) 11 parts by mass, a phenol resin (trade name "MEH-7851ss", solid at 23 ° C., manufactured by Maywa Kasei Co., Ltd.) 5 parts by mass, and spherical silica (trade name "SO-25R", Kabu Shikigai Co., Ltd. Admatex make) 110 mass parts were added to methyl ethyl ketone, and it mixed, and adhesive composition solution S2 of 20 mass % of solid content concentration was obtained. Then, the adhesive composition solution S2 was applied on the silicone-treated surface of the PET release liner having the silicon-treated surface to form a coating film, and the coating film was heated at 130 ° C. for 2 minutes to remove the solvent, and the adhesive layer, die bond A film (thickness of 10 µm) was produced.

<Production of dicing die bond film>

After peeling off the PET release liner from the dicing tape of Example 1, the die-bonding film described above was bonded to the exposed pressure-sensitive adhesive layer. In bonding, the center of the dicing tape and the center of the die-bonding film were aligned. In addition, a hand roller was used for bonding. Next, the pressure-sensitive adhesive layer in the dicing tape was irradiated with ultraviolet rays of 300 mJ/cm 2 from the side of the substrate. As described above, a dicing die-bonding film of Example 3 having a laminated structure including a dicing tape and a die-bonding film was produced.

[Example 4]

A dicing die bond film of Example 4 was produced in the same manner as in Example 3 except that the dicing tape of Example 2 was used instead of the dicing tape of Example 1.

[Comparative Examples 3 and 4]

Each dicing die-bonding film of Comparative Examples 3 and 4 was produced in the same manner as in Example 3 except that the dicing tape of Comparative Example 1 or Comparative Example 2 was used instead of the dicing tape of Example 1.

[Tensile stress measurement]

About each dicing tape of Examples 1 and 2 and Comparative Examples 1 and 2, the tensile stress was measured as follows. First, the pressure-sensitive adhesive layer of the dicing tape is irradiated with ultraviolet rays of 300 mJ/cm 2 from the side of the substrate to cure the pressure-sensitive adhesive layer, and then a dicing tape test piece (width 20 mm × length 140 mm) is cut out from the dicing tape. was For each of the dicing tapes of Examples 1 and 2 and Comparative Examples 1 and 2, the required number of dicing tape test pieces were prepared. Then, using a tensile tester (trade name "Autograph AGS-50NX", manufactured by Shimadzu Seisakusho Co., Ltd.), a tensile test was performed on the dicing tape test piece, and the dicing tape test piece elongated at a predetermined tensile speed The resulting tensile stress was measured. A stress-strain curve was obtained by this measurement. In the tensile test, the initial distance between chucks is 100 mm, the temperature condition is -15° C., and the tensile speed is 10 mm/min, 100 mm/min or 1000 mm/min. Stress-strain curves obtained for each dicing tape test piece are shown in FIG. 12 . In the graph of Fig. 12, the horizontal axis represents strain (%) of the dicing tape test piece, and the vertical axis represents the tensile stress (MPa) generated in the dicing tape test piece. In the graph of FIG. 12, the solid line E1 represents the stress-strain curve at a tensile rate of 10 mm/min in the dicing tape of Example 1, and the dotted line E1' represents the dicing tape of Example 1. The stress-strain curve at a tensile speed of 100 mm/min is shown, the broken line E1" represents the stress-strain curve at a tensile speed of 1000 mm/min in the dicing tape of Example 1, and the solid line E2 is the Example The stress-strain curve at a tensile speed of 10 mm/min in the dicing tape of Example 2 is shown, and the dashed-dotted line E2' represents the stress-strain curve at a tensile speed of 100 mm/min in the dicing tape of Example 2. and the broken line E2" represents a stress-strain curve at a tensile speed of 1000 mm/min in the dicing tape of Example 2, and the solid line C1 represents a tensile speed of 10 mm/min in the dicing tape of Comparative Example 1. Indicates the stress-strain curve at , the dashed-dotted line C1' represents the stress-strain curve at a tensile speed of 100 mm/min in the dicing tape of Comparative Example 1, and the broken line C1" represents the dicing tape of Comparative Example 1. The stress-strain curve at a tensile rate of 1000 mm/min in the tape is shown, and the solid line C2 represents the stress-strain curve at a tensile rate of 10 mm/min in the dicing tape of Comparative Example 2, and the dashed-dotted line C2' denotes a stress-strain curve at a tensile speed of 100 mm/min in the dicing tape of Comparative Example 2, and the broken line C2" is a stress-strain curve at a tensile speed of 1000 mm/min in the dicing tape of Comparative Example 2- Shows the deformation curve.

[Elastic modulus measurement]

About each dicing tape of Examples 1 and 2 and Comparative Examples 1 and 2, the tensile elasticity modulus was measured as follows. First, the pressure-sensitive adhesive layer of the dicing tape is irradiated with ultraviolet rays of 300 mJ/cm 2 from the side of the substrate to cure the pressure-sensitive adhesive layer, and then a dicing tape test piece (width 20 mm × length 140 mm) is cut out from the dicing tape. was For each of the dicing tapes of Examples 1 and 2 and Comparative Examples 1 and 2, the required number of dicing tape test pieces were prepared. Then, using a tensile tester (trade name "Autograph AGS-50NX", manufactured by Shimadzu Seisakusho Co., Ltd.), a tensile test was performed on the dicing tape test piece, and the initial slope in the obtained stress-strain curve (specific The tensile elastic modulus was calculated from the slope determined based on the measurement data up to 1% of the strain value after the start of the tensile test. In the tensile test, the initial distance between chucks is 100 mm, the temperature condition is -15° C., and the tensile speed is 10 mm/min, 100 mm/min or 1000 mm/min. The tensile modulus obtained by these measurements is shown in Table 1.

[Evaluation of the expand process]

Using each of the dicing die-bonding films of Examples 3 and 4 and Comparative Examples 3 and 4, the following bonding process and subsequent cool expand process were performed.

In the bonding step, the semiconductor wafer division body held on the wafer processing tape (trade name "ELP UB-3083D", manufactured by Nitto Denko Co., Ltd.) is bonded to the die-bonding film of the dicing die-bonding film, and then the semiconductor wafer The tape for wafer processing was peeled off with the divided body. The semiconductor wafer divided body is formed and manufactured as follows. First, on a Si mirror wafer (diameter 300 mm, thickness 780 μm, manufactured by Tokyo Gako Co., Ltd.) held together with a ring frame on a tape for wafer processing (trade name "V12S-R2", manufactured by Nitto Denko Co., Ltd.) On the other hand, from the side of one side thereof, using a dicing device (trade name "DFD6361", manufactured by Disco Co., Ltd.), a dividing groove (20 to 25 μm in width and 50 μm in depth) for singling is formed by the rotary blade. did Next, after attaching a tape for wafer processing (trade name "ELP UB-3083D", manufactured by Nitto Denko Co., Ltd.) to the divided groove formation surface, the tape for wafer processing (trade name "V12S-R2") was peeled off from the Si mirror wafer. . Thereafter, the Si mirror wafer was thinned to a thickness of 20 μm by grinding from the side of the other side of the Si mirror wafer (the side on which no division grooves were formed). In the above manner, a semiconductor wafer divided body (in a state held by a tape for wafer processing) was formed. A plurality of semiconductor chips (6 mm x 12 mm) are included in this semiconductor wafer division body.

The cool expand step was performed with the cool expand unit using a die separator (trade name "Die Separator DDS2300", manufactured by Disco). Specifically, after sticking a ring frame on the pressure-sensitive adhesive layer of the dicing tape in the aforementioned dicing die-bonding film accompanying the semiconductor wafer division body, the dicing die-bonding film is set in an apparatus, and the coolant of the apparatus is set. In the expand unit, the dicing tape of the dicing die bond film accompanying the semiconductor wafer division body was expanded under the conditions of a predetermined expand speed and a predetermined expand amount under the temperature condition of -15°C. The cool expand process performed using each dicing die bond film of Examples 3 and 4 and Comparative Examples 3 and 4 is as follows.

When the dicing tape of the dicing die bond film of Example 3 carrying the semiconductor wafer divided body on the die bond film was expanded under the conditions of an expand speed of 0.5 mm/sec and an expand amount of 3 mm, the semiconductor wafer divided body The area where the die-bonding film was to be cut along the split groove was cut over the entire area, and the dicing tape did not lift from the pressure-sensitive adhesive layer in the semiconductor chip with the die-bonding film after the cutting. In this cool expand process, the tensile stress generated in the dicing tape (dicing tape of Example 1) expanded under conditions of an expand speed of 0.5 mm/sec, an expand amount of 3 mm, and -15°C, Corresponds to the tensile stress generated in the dicing tape of Example 1 in a state where the strain value reached 12% when the above tensile test at a temperature of -15°C was performed under the condition of a tensile speed of 50 mm/min. do.

When the dicing tape of the dicing die bond film of Example 3 carrying the semiconductor wafer divided body on the die bond film was expanded under the conditions of an expand speed of 1 mm/sec and an expand amount of 3 mm, the semiconductor wafer divided body The area where the die-bonding film was planned to be cut along the dividing groove was cut over the entire area, and the area where the dicing tape lifted from the pressure-sensitive adhesive layer in the die-bonding film after the cutting occurred was about 20%. In this cool expand process, the tensile stress generated in the dicing tape (dicing tape of Example 1) expanded under the conditions of an expand speed of 1 mm/sec, an expand amount of 3 mm, and -15 ° C. Corresponds to the tensile stress generated in the dicing tape of Example 1 in a state where the strain value reached 12% at a tensile speed of 100 mm/min in the above tensile test conducted at a temperature of -15°C.

When the dicing tape of the dicing die bond film of Example 4 accompanying the semiconductor wafer division body on the die bond film was expanded under the conditions of an expand speed of 1 mm/sec and an expand amount of 4 mm, the semiconductor wafer division body The area where the die-bonding film was to be cut along the split groove was cut over the entire area, and the die-bonding film after cutting did not lift from the pressure-sensitive adhesive layer of the dicing tape. In this cool expand process, the tensile stress generated in the dicing tape (dicing tape of Example 2) expanded under the conditions of an expand speed of 1 mm/sec, an expand amount of 4 mm, and -15°C, Corresponds to the tensile stress generated in the dicing tape of Example 2 in a state where the deformation value reached 14% at a tensile speed of 100 mm/min in the above tensile test conducted at a temperature condition of -15°C.

When the dicing tape of the dicing die bond film of Example 4 accompanying the semiconductor wafer divided body on the die bond film was expanded under conditions of an expand speed of 1 mm/sec and an expand amount of 8 mm, the semiconductor wafer divided body The area where the die-bonding film was to be cut along the split groove was cut over the entire area, and the die-bonding film after cutting did not lift from the pressure-sensitive adhesive layer of the dicing tape. In this cool expand process, the tensile stress generated in the dicing tape (dicing tape of Example 2) expanded under the conditions of an expand speed of 1 mm/sec, an expand amount of 8 mm, and -15 ° C. Corresponds to the tensile stress generated in the dicing tape of Example 2 in a state where the strain value reached 28% at a tensile speed of 100 mm/min in the above tensile test conducted at a temperature of -15°C.

When the dicing tape of the dicing die bond film of Comparative Example 3 accompanying the semiconductor wafer divided body on the die bond film was expanded under conditions of an expand speed of 1 mm/sec and an expand amount of 3 mm, the semiconductor wafer divided body About 80% of the portions to be cut in the die-bonding film along the dividing groove of were not cut. In this cool expand process, the tensile stress generated in the dicing tape (dicing tape of Comparative Example 1) expanded under the conditions of an expand speed of 1 mm/sec, an expand amount of 3 mm, and -15°C was compared. Corresponds to the tensile stress generated in the dicing tape of Example 1 in a state where the strain value reached 12% at a tensile speed of 100 mm/min in the above tensile test conducted at a temperature of -15°C.

When the dicing tape of the dicing die bond film of Comparative Example 4 accompanying the semiconductor wafer divided body on the die bond film was expanded under conditions of an expand speed of 1 mm/sec and an expand amount of 4 mm, the semiconductor wafer divided body About 20% of the portions to be cut in the die-bonding film along the dividing groove of were not cut. In the Boncool expand process, the tensile stress generated in the dicing tape (dicing tape of Comparative Example 2) expanded under the conditions of an expand speed of 1 mm/sec, an expand amount of 4 mm, and -15 ° C is a comparative example. Corresponds to the tensile stress generated in the dicing tape in a state where the deformation value reached 14% at a tensile speed of 100 mm / min in the above tensile test conducted at a temperature condition of -15 ° C. for the dicing tape of No. 2.

X: dicing die bond film
10: dicing tape
11: registration
12: adhesive layer
20, 21: die bond film
W, 30A, 30C: semiconductor wafer
30B: semiconductor wafer division body
30a: divided groove
30b: reforming zone
31: semiconductor chip

Claims (10)

It has a laminated structure including a base material and an adhesive layer,
In a tensile test performed at an initial distance between chucks of 100 mm for a dicing tape test piece having a width of 20 mm, the tensile elastic modulus is 500 MPa or more, and the tensile strength is within the range of 15 to 32 MPa at at least a part of the strain value in the range of 5 to 30%. A dicing tape capable of exhibiting stress, wherein the temperature condition in the tensile test is -15 ° C. According to claim 1,
A dicing tape capable of exhibiting a tensile stress within a range of 15 to 32 MPa in a range of a strain value of 5 to 20% in the above tensile test. According to claim 1,
The tensile stress is 20 to 32 MPa, the dicing tape. According to claim 2,
The tensile stress is 20 to 32 MPa, the dicing tape. According to claim 1,
The dicing tape, wherein the tensile speed condition in the tensile test is in the range of 10 to 1000 mm / min. According to claim 3,
The dicing tape, wherein the tensile speed condition in the tensile test is in the range of 10 to 1000 mm / min. The dicing tape according to any one of claims 1 to 6,
A dicing die bond film comprising a die bond film on the pressure-sensitive adhesive layer in the dicing tape. On the side of the die-bonding film in the dicing die-bonding film comprising the dicing tape according to claim 1 and the die-bonding film on the pressure-sensitive adhesive layer in the dicing tape, it can be divided into a plurality of semiconductor chips. A first step for bonding a semiconductor wafer or a semiconductor wafer division body including a plurality of semiconductor chips;
A second step for cutting the die-bonding film to obtain a semiconductor chip with a die-bonding film by expanding the dicing tape under conditions in which a tensile stress in the range of 15 to 32 MPa is generated in the dicing tape.
Including, a semiconductor device manufacturing method. According to claim 8,
The method of manufacturing a semiconductor device, wherein the temperature condition in the second step is 0°C or less. delete

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