JP6959874B2 - Dicing die bond film - Google Patents

Description

The present invention relates to a dicing die bond film that can be used in the manufacturing process of a semiconductor device.

In the manufacturing process of a semiconductor device, a dicing die bond film may be used to obtain a semiconductor chip having an adhesive film having a size equivalent to that of a chip for die bonding, that is, a semiconductor chip with an adhesive layer for die bonding. The dicing die bond film has a size corresponding to the semiconductor wafer to be processed. For example, a dicing tape composed of a base material and an adhesive layer and a die bond film (adhesive) that is releasably adhered to the adhesive layer side. It has an agent layer).

As one of the methods for obtaining a semiconductor chip with an adhesive layer using a dicing die bond film, a method is known in which a dicing tape in the dicing die bond film is expanded and a process for cutting the die bond film is performed. In this method, first, the semiconductor wafer is bonded on the die bond film of the dicing die bond film. This semiconductor wafer is, for example, processed so that it can be later cut together with a die bond film and individualized into a plurality of semiconductor chips. Next, an expanding device is used to cut the dicing film so that a plurality of adhesive film pieces, each of which is in close contact with the semiconductor chip, are generated from the dicing film on the dicing tape, and the dicing tape of the dicing die bond film is a semiconductor. The film is stretched in two dimensions including the radial direction and the circumferential direction of the wafer. In this expanding step, the semiconductor wafer on the dicing film is also split at a portion corresponding to the split portion in the die bond film, and the semiconductor wafer is fragmented into a plurality of semiconductor chips on the dicing die bond film or the dicing tape. Next, a re-expanding step is performed in order to increase the separation distance of the plurality of semiconductor chips with adhesive layers after cutting on the dicing tape. Next, for example, after undergoing a cleaning step, each semiconductor chip is pushed up from the lower side of the dicing tape by a pin member of the pickup mechanism together with a die bond film having a size equivalent to the chip in close contact with the chip, and then picked up from the dicing tape. NS. In this way, a semiconductor chip with a die bond film, that is, an adhesive layer, is obtained. The semiconductor chip with an adhesive layer is fixed to an adherend such as a mounting substrate by die bonding via the adhesive layer. For example, the techniques related to the dicing die bond film used as described above are described in, for example, Patent Documents 1 to 3 below.

Japanese Unexamined Patent Publication No. 2007-2173 Japanese Unexamined Patent Publication No. 2010-177401 Japanese Unexamined Patent Publication No. 2012-23161

FIG. 14 shows a conventional dicing die bond film Y in a schematic cross-sectional view thereof. The dicing die bond film Y is composed of a dicing tape 60 and a dicing film 70. The dicing tape 60 has a laminated structure of a base material 61 and an adhesive layer 62 exhibiting adhesive strength. The die bond film 70 is in close contact with the pressure-sensitive adhesive layer 62 due to the adhesive strength of the pressure-sensitive adhesive layer 62. Such a dicing die bond film Y has a disk shape having a size corresponding to a semiconductor wafer to be processed or a work in the manufacturing process of a semiconductor device, and can be used in the above-mentioned expanding step. For example, as shown in FIG. 15, the above-mentioned expanding step is performed in a state where the ring frame 81 is attached to the pressure-sensitive adhesive layer 62 and the semiconductor wafer 82 is attached to the die bond film 70. The ring frame 81 is a frame member that, when attached to the dicing die bond film Y, mechanically comes into contact with a transport mechanism such as a transport arm provided in the expanding device when the work is transported. The conventional dicing die bond film Y is designed so that such a ring frame 81 can be fixed to the film by the adhesive force of the adhesive layer 62 of the dicing tape 60. That is, the conventional dicing die bond film Y has a design in which a ring frame sticking area is secured around the die bond film 70 in the adhesive layer 62 of the dicing tape 60. In such a design, the distance between the outer peripheral end 62e of the pressure-sensitive adhesive layer 62 and the outer peripheral end 70e of the die bond film 70 is about 10 to 30 mm.

In such a conventional dicing die bond film Y, the laminated structure is different and the thickness is different between the region R1'to which the ring frame 81 is attached and the region R2'to which the semiconductor wafer 82 is attached. In the dicing die bond film Y, the difference in the laminated structure and the difference in the thickness are the main causes of the non-uniformity in the degree of elongation at the time of expansion. Specifically, in the dicing die bond film Y, a difference is likely to occur between the region R1'and the region R2', which have different laminated structures and thicknesses, to the extent that they are stretched in the above-mentioned expanding step for cutting. The region R1'(outer region) in the die bond film Y does not have the die bond film 70 in its laminated structure and is thinner than the inner region R2', and is therefore more likely to extend than the region R2'in the expanding step. The more uneven the degree of elongation of the dicing die bond film Y at the time of expansion, the more likely it is that a poor splitting, that is, an event in which the planned splitting portion is not split in the expanding step is likely to occur.

The present invention has been devised under the above circumstances, and an object of the present invention is to provide a dicing die bond film suitable for satisfactorily cutting an adhesive layer in an expanding step. ..

The dicing die bond film provided by the present invention includes a dicing tape and an adhesive layer. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive layer is releasably adhered to the adhesive layer in the dicing tape. In the dicing die bond film, the following is applied to the first tensile stress generated at a strain value of 30% in a tensile test conducted under the conditions of an initial chuck distance of 20 mm, -15 ° C, and a tensile speed of 300 mm / min for the following first test piece. The ratio of the second tensile stress generated at a strain value of 30% in the tensile test conducted under the conditions of the initial chuck distance of 20 mm, -15 ° C, and tensile speed of 300 mm / min for the second test piece is 0.9 to 1. It is .1, preferably 0.95 to 1.05. The dicing die bond film having such a structure can be used to obtain a semiconductor chip with an adhesive layer in the manufacturing process of a semiconductor device. The length direction of the first test piece cut out from the dicing die bond film may be the so-called MD direction of the dicing die bond film, the TD direction orthogonal to the MD direction, or another direction. The length direction of the second test piece cut out from the dicing die bond film is the same as the length direction of the first test piece.
[First test piece]
A test piece having a length of 50 mm and a width of 10 mm extending in one direction, cut out from the outer region from the outer peripheral edge to the inner side of the dicing die bond film [second test piece].
A test piece having a length of 50 mm and a width of 10 mm extending in one direction, which is cut out from the inner region inside the outer region of the dicing die bond film.

In the manufacturing process of a semiconductor device, as described above, in order to obtain a semiconductor chip with an adhesive layer, an expanding step performed by using a dicing die bond film, that is, an expanding step for cutting may be carried out. However, in this expanding step, it is necessary that an appropriate breaking force acts on the die bond film on the dicing tape and the work such as the semiconductor wafer. In the dicing die bond film, the above-mentioned first test piece derived from the inner region of the film with respect to the first tensile stress at -15 ° C. derived from the outer region from the outer peripheral edge to the inner side of the film is 20 mm. The value of the ratio of the second tensile stress at −15 ° C. of the second test piece is 0.9 to 1.1, preferably 0.95 to 1.05. Such a configuration is the degree of elongation of the dicing die bond film including the outer region and the inner region in the low temperature expanding step for splitting performed at -15 ° C., which is lower than room temperature, and the temperature in the vicinity thereof. Suitable for uniforming. Therefore, the dicing die bond film having this structure is suitable for equalizing the breaking force acting on the adhesive layer and the work on the dicing tape in the low temperature expanding step, and is suitable for satisfactorily cutting these. ..

In this dicing die bond film in which the degree of elongation at the time of expansion is made uniform in this way, the dicing tape or its adhesive layer is provided so that the adhesive layer includes the frame attachment area in addition to the work attachment area. And the adhesive layer on it can be designed with substantially the same dimensions in the in-plane direction of the film. For example, it is possible to adopt a design in which the outer peripheral edge of the adhesive layer is within 1000 μm from each outer peripheral edge of the base material of the dicing tape or the adhesive layer in the in-plane direction of the dicing die bond film. In such a dicing die bond film, a process for forming one dicing tape having a laminated structure of a base material and an adhesive layer and a process for forming one adhesive layer are performed by one punching. Suitable for batch implementation in processing such as processing.

In the manufacturing process of the above-mentioned conventional dicing die bond film Y, a processing step (first processing step) for forming the dicing tape 60 having a predetermined size and shape and the die bond film 70 having a predetermined size and shape are performed. A processing step for forming (second processing step) is required as a separate process. In the first processing step, for example, a predetermined separator, a base material layer to be formed on the base material 61, and a pressure-sensitive adhesive to be formed on the pressure-sensitive adhesive layer 62 located between them. The laminated sheet body having a laminated structure with the agent layer is processed so that the processing blade is inserted from the side of the base material layer to the separator. As a result, the dicing tape 60 having a laminated structure of the pressure-sensitive adhesive layer 62 on the separator and the base material 61 is formed on the separator. In the second processing step, for example, with respect to a laminated sheet body having a laminated structure of a predetermined separator and an adhesive layer to be formed on the die bond film 70, from the side of the adhesive layer to the separator. Processing is performed to rush the processing blade. As a result, the die bond film 70 is formed on the separator. The dicing tape 60 and the dicing film 70 formed in these separate steps are then bonded while being aligned. FIG. 16 shows a conventional dicing die bond film Y with a separator 83 covering the surface of the die bond film 70 and the surface of the pressure-sensitive adhesive layer 62.

On the other hand, the dicing die bond film of the present invention in the case where the dicing tape or its pressure-sensitive adhesive layer and the adhesive layer on the dicing tape have substantially the same design dimensions in the in-plane direction of the film is the base material and the pressure-sensitive adhesive layer. It is suitable to collectively perform the processing for forming one dicing tape having a laminated structure with and the processing for forming one adhesive layer by one processing such as punching processing. .. Such a dicing die bond film is suitable for satisfactorily cutting the adhesive layer in the expanding process as described above, and is efficiently manufactured from the viewpoint of reducing the number of manufacturing steps and suppressing the manufacturing cost. Suitable for

The dicing die bond film preferably has a laminated structure that includes a substrate, an adhesive layer, and an adhesive layer and is continuous over the inner and outer regions. Such a configuration is preferable in order to realize the above-mentioned good splittability in the expanding step.

The thickness of the dicing die bond film is preferably uniform over the inner and outer regions. Such a configuration is preferable in order to realize the above-mentioned good splittability in the expanding step.

The above-mentioned first tensile stress and second tensile stress in the dicing die bond film are preferably 5 N or more from the viewpoint of ensuring a breaking force acting on the adhesive layer during expansion at a temperature of -15 ° C. or its vicinity. , More preferably 8N or more, more preferably 10N or more. Further, from the viewpoint of suppressing peeling between the adhesive layer and the adhesive layer of the dicing tape during expansion at a temperature of -15 ° C. or its vicinity, the above-mentioned first tensile stress and the above-mentioned first tensile stress in the dicing die bond film The second tensile stress is preferably 28 N or less, more preferably 25 N or less, and more preferably 20 N or less.

The adhesive layer of the dicing die bond film is preferably 1N / 10mm or more, more preferably 1.5N, with respect to the SUS plane in a peeling test under the conditions of −15 ° C., peeling angle 180 ° and tensile speed 300 mm / min. It exhibits 180 ° peeling adhesive strength of / 10 mm or more, more preferably 2N / 10 mm or more. Further, in the peeling test under the same conditions, this adhesive layer exhibits 180 ° peeling adhesive strength of, for example, 100 N / 10 mm or less, preferably 50 N / 10 mm or less, with respect to the SUS plane. The structure regarding the adhesive strength is suitable for ensuring the holding of the frame member by the dicing die bond film at a temperature of −15 ° C., which is lower than room temperature, and a temperature close to the room temperature.

In this dicing die bond film, the third tensile stress generated at a strain value of 30% in the tensile test performed under the conditions of the initial chuck distance of 20 mm, 23 ° C., and the tensile speed of 300 mm / min for the first test piece, and the second test. The fourth tensile stress generated at a strain value of 30% in a tensile test conducted under the conditions of an initial chuck distance of 20 mm, 23 ° C., and a tensile speed of 300 mm / min is preferably 1 N or more, more preferably 3 N or more, and more preferably. Is 5N or more. Such a configuration is suitable for equalizing the degree of elongation when expanded at a temperature of 23 ° C. or a vicinity thereof in the dicing die bond film including the outer region and the inner region. After the splitting expanding step, another expanding step may be performed at room temperature in order to increase the separation distance for the plurality of semiconductor chips with adhesive layers after cutting on the dicing tape, and the third and fourth tensile stresses may be performed. The above configuration with respect to the above is suitable for making the degree of elongation of the dicing die bond film uniform in this room temperature expanding step. Further, from the viewpoint of suppressing peeling between the adhesive layer and the adhesive layer of the dicing tape during expansion at a temperature of 23 ° C. or its vicinity, the above-mentioned third tensile stress and the third tensile stress in the dicing die bond film are obtained. 4 The tensile stress is preferably 20 N or less, more preferably 15 N or less, and more preferably 10 N or less.

The value of the ratio of the fourth tensile stress to the third tensile stress in the dicing die bond film is preferably 0.95 to 1.05. Such a configuration is suitable for equalizing the degree of elongation when expanded at a temperature of 23 ° C. or a vicinity thereof in the dicing die bond film including the outer region and the inner region.

The adhesive layer of the dicing die bond film is preferably 0.1 N / 10 mm or more, more preferably 0. It exhibits 180 ° peeling adhesive strength of 3N / 10mm or more, more preferably 0.5N / 10mm or more. Such a configuration is suitable for ensuring the holding of the frame member by the dicing die bond film at a temperature of 23 ° C. or its vicinity. Further, in the peeling test under the same conditions, this adhesive layer exhibits 180 ° peeling adhesive strength of, for example, 20 N / 10 mm or less, preferably 10 N / 10 mm or less, with respect to the SUS plane. Such a configuration is suitable for suppressing the generation of adhesive residue on the frame member when the frame member such as the ring frame is peeled off from the adhesive layer of the dicing die bond film.

It is sectional drawing of the dicing die bond film which concerns on one Embodiment of this invention. An example of the case where the dicing die bond film shown in FIG. 1 is accompanied by a separator is shown. An example of the manufacturing method of the dicing die bond film shown in FIG. 1 is shown. A part of the steps in the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used is shown. The steps following the steps shown in FIG. 4 are shown. The steps following the steps shown in FIG. 5 are shown. The steps following the steps shown in FIG. 6 are shown. The steps following the steps shown in FIG. 7 are shown. The steps following the steps shown in FIG. 8 are shown. A part of the steps in the modified example of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used is shown. A part of the steps in the modified example of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used is shown. A part of the steps in the modified example of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used is shown. A part of the steps in the modified example of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used is shown. It is sectional drawing of the conventional dicing die bond film. The usage mode of the dicing die bond film shown in FIG. 14 is shown. A supply form of the dicing die bond film shown in FIG. 14 is shown.

FIG. 1 is a schematic cross-sectional view of a dicing die bond film X according to an embodiment of the present invention. The dicing die bond film X has a laminated structure including a dicing tape 10 and an adhesive layer 20. The dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12. The adhesive layer 20 is releasably adhered to the adhesive layer 12 of the dicing tape 10. The dicing die bond film X can be used in an expanding process as described below, for example, in the process of obtaining a semiconductor chip with an adhesive layer in the manufacture of a semiconductor device, and is a disk having a size corresponding to a workpiece such as a semiconductor wafer. Has a shape. The diameter of the dicing die bond film X is, for example, within the range of 345 to 380 mm (12-inch wafer compatible type), within the range of 245 to 280 mm (8-inch wafer compatible type), and within the range of 195 to 230 mm (6 inch wafer compatible type). ) Or within the range of 495 to 530 mm (18-inch wafer compatible type).

The first tensile stress generated at a strain value of 30% in a tensile test performed under the conditions of an initial chuck distance of 20 mm, -15 ° C., and a tensile speed of 300 mm / min for the following first test piece in the dicing die bond film X is preferable. Is 5N or more, more preferably 8N or more, and more preferably 10N or more. The second tensile stress generated at a strain value of 30% in the tensile test conducted under the same conditions as above (initial chuck distance 20 mm, -15 ° C, tensile speed 300 mm / min) for the following second test piece is It is preferably 5N or more, more preferably 8N or more, and more preferably 10N or more. The first tensile stress and the second tensile stress are preferably 28 N or less, more preferably 25 N or less, and more preferably 20 N or less, respectively. The value of the ratio of the second tensile stress (-15 ° C) to the first tensile stress (-15 ° C) is 0.9 to 1.1, preferably 0.95 to 1.05. The length direction of the first test piece cut out from the dicing die bond film X may be the so-called MD direction of the dicing die bond film X, the TD direction orthogonal to the MD direction, or any other direction. The length direction of the second test piece cut out from the dicing die bond film X is the same as the length direction of the first test piece. The tensile stress can be measured using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation).
[First test piece]
A test piece having a length of 50 mm and a width of 10 mm extending in one direction, which is cut out from the outer region R1 from the outer peripheral edge to the inner side 20 mm in the dicing die bond film X [second test piece].
A test piece having a length of 50 mm and a width of 10 mm extending in one direction, which is cut out from the inner region R2 inside the outer region R1 of the dicing die bond film X.

Further, the first test piece of the dicing die bond film X is subjected to a tensile test conducted under the conditions of an initial chuck distance of 20 mm, 23 ° C., and a tensile speed of 300 mm / min. The fourth tensile stress generated at a strain value of 30% in a tensile test conducted under the same conditions (initial chuck distance 20 mm, 23 ° C., tensile speed 300 mm / min) for the two test pieces is preferably 1 N or more, respectively. It is more preferably 3N or more, and more preferably 5N or more. The third tensile stress and the fourth tensile stress are preferably 20 N or less, more preferably 15 N or less, and more preferably 10 N or less, respectively. The value of the ratio of the fourth tensile stress (23 ° C.) to the third tensile stress (23 ° C.) is preferably 0.95 to 1.05.

The base material 11 of the dicing tape 10 is an element that functions as a support in the dicing tape 10 or the dicing die bond film X. As the base material 11, for example, a plastic base material (particularly a plastic film) can be preferably used. Examples of the constituent material of the plastic base material include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyetherimide, polyamide, total aromatic polyamide, and polyphenyl sulfide. Examples include aramid, fluororesins, cellulose-based resins, and silicone resins. Examples of the polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolypropylene, polybutene, polymethylpentene, and ethylene. -Vinyl acetate copolymer (EVA), ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer Can be mentioned. Examples of polyesters include polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The base material 11 may be made of one kind of material or may be made of two or more kinds of materials. The base material 11 may have a single-layer structure or a multi-layer structure. From the viewpoint of ensuring good heat shrinkage in the base material 11 and maintaining the chip separation distance realized in the separation expanding step described later by utilizing the partial heat shrinkage of the dicing tape 10 or the base material 11. The base material 11 preferably contains an ethylene-vinyl acetate copolymer as a main component. The main component of the base material 11 is a component that occupies the largest mass ratio among the constituent components. When the base material 11 is made of a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film. When the pressure-sensitive adhesive layer 12 on the base material 11 is an ultraviolet curable type as described later, the base material 11 preferably has ultraviolet transmission.

When the dicing tape 10 or the base material 11 is shrunk by, for example, partial heating when the dicing die bond film X is used, for example, the chip separation distance realized in the separation expanding step described later is set to the dicing tape 10 or the base material 11. When maintaining by utilizing partial heat shrinkage, the base material 11 preferably has heat shrinkage property. When the base material 11 is made of a plastic film, the base material 11 is preferably a biaxially stretched film in order to realize isotropic heat shrinkage of the dicing tape 10 or the base material 11. The dicing tape 10 to the base material 11 has a heat shrinkage rate of preferably 2 to 30%, more preferably 2 to 25%, and more preferably 2 to 25% in a heat treatment test conducted under the conditions of a heating temperature of 100 ° C. and a heat treatment time of 60 seconds. It is 3 to 20%, more preferably 5 to 20%. The heat shrinkage rate refers to at least one of the so-called MD direction heat shrinkage rate and the so-called TD direction heat shrinkage rate.

The surface of the base material 11 on the pressure-sensitive adhesive layer 12 side may be subjected to a physical treatment, a chemical treatment, or an undercoating treatment for enhancing the adhesion to the pressure-sensitive adhesive layer 12. Physical treatments include, for example, corona treatment, plasma treatment, sandmat treatment, ozone exposure treatment, flame exposure treatment, high-voltage impact exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment. The treatment for enhancing the adhesion is preferably applied to the entire surface of the base material 11 on the pressure-sensitive adhesive layer 12 side.

The thickness of the base material 11 is preferably 40 μm or more, more preferably 50 μm or more, and more preferably, from the viewpoint of ensuring the strength for the base material 11 to function as a support in the dicing tape 10 or the dicing die bond film X. Is 55 μm or more, more preferably 60 μm or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape 10 or the dicing die bond film X, the thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less, and more preferably 150 μm or less. ..

The pressure-sensitive adhesive layer 12 of the dicing tape 10 contains a pressure-sensitive adhesive. The pressure-sensitive adhesive may be a pressure-sensitive adhesive (adhesive strength-reducing type pressure-sensitive adhesive) that can intentionally reduce the adhesive strength by an external action such as irradiation or heating, or may be adhesive depending on the external action. It may be an adhesive (adhesive with non-reduced adhesive strength) whose force is hardly reduced or not reduced at all, depending on the method and conditions for individualizing the semiconductor chip to be individualized using the dicing die bond film X. Can be selected as appropriate.

When a pressure-reducing pressure-sensitive adhesive is used as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, the pressure-sensitive adhesive layer 12 exhibits a relatively high adhesive strength and is relatively low in the manufacturing process and the usage process of the dicing die bond film X. It is possible to use the state showing the adhesive strength properly. For example, when the adhesive layer 20 is attached to the pressure-sensitive adhesive layer 12 of the dying tape 10 in the manufacturing process of the dying die-bond film X, or when the dying die-bond film X is used in a predetermined wafer dying step, the pressure-sensitive adhesive layer 12 is used. While it is possible to suppress / prevent the floating or peeling of the adherend such as the adhesive layer 20 from the adhesive layer 12 by utilizing the state showing relatively high adhesive strength, after that, the dicing die bond In the pick-up process for picking up the semiconductor chip with the adhesive layer from the dicing tape 10 of the film X, after reducing the adhesive force of the adhesive layer 12, the semiconductor chip with the adhesive layer is appropriately removed from the adhesive layer 12. It will be possible to pick up.

Examples of such a pressure-reducing pressure-sensitive adhesive include a radiation-curable pressure-sensitive adhesive (a pressure-sensitive pressure-sensitive adhesive) and a heat-foaming type pressure-sensitive adhesive. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of pressure-reducing pressure-sensitive adhesive may be used, or two or more types of pressure-reducing pressure-sensitive adhesive may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 12 may be a pressure-reducing pressure-sensitive adhesive. And other parts may be formed from a non-adhesive non-reducing pressure-sensitive adhesive. When the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers forming the laminated structure may be formed of a pressure-reducing pressure-sensitive adhesive, and some layers in the laminated structure may be a pressure-reducing pressure-sensitive adhesive. It may be formed from.

As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, a type of pressure-sensitive adhesive that is cured by irradiation with electron beam, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used. A curable type adhesive (ultraviolet curable adhesive) can be particularly preferably used.

Examples of the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 include a base polymer such as an acrylic polymer which is an acrylic pressure-sensitive adhesive and a radiation-polymerizable monomer having a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples thereof include additive-type radiation-curable pressure-sensitive adhesives containing components and oligomer components.

The above acrylic polymer preferably contains a monomer unit derived from an acrylic acid ester and / or a methacrylic acid ester as the main monomer unit having the largest mass ratio. In the following, "(meth) acrylic" is used to represent "acrylic" and / or "methacryl".

Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer include hydrocarbon groups such as (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester. Included (meth) acrylic acid esters. Examples of the (meth) acrylic acid alkyl ester include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester and iso of (meth) acrylic acid. Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (ie lauryl ester), tridecyl ester, tetradecyl ester , Hexadecyl ester, octadecyl ester, and ecosil ester. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include phenyl (meth) acrylic acid and benzyl (meth) acrylic acid. As the (meth) acrylic acid ester as the main monomer for the acrylic polymer, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. .. In order to appropriately express basic properties such as adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the (meth) acrylic acid ester as the main monomer in all the monomer components for forming the acrylic polymer. The ratio of is preferably 40% by mass or more, more preferably 60% by mass or more.

The acrylic polymer may contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid ester in order to modify its cohesive force, heat resistance and the like. Such monomer components include, for example, functional groups such as carboxy group-containing monomer, acid anhydride monomer, hydroxy group-containing monomer, glycidyl group-containing monomer, sulfonic acid group-containing monomer, phosphoric acid group-containing monomer, acrylamide, and acrylonitrile. Examples include contained monomers. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, and ( Examples include 8-hydroxyoctyl acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate, and (meth). ) Acryloyloxynaphthalene sulfonic acid can be mentioned. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacryloyl phosphate. As the other monomer for the acrylic polymer, one kind of monomer may be used, or two or more kinds of monomers may be used. In order to appropriately express the basic properties such as adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of the other monomer components to all the monomer components for forming the acrylic polymer is preferable. Is 60% by mass or less, more preferably 40% by mass or less.

The acrylic polymer contains a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth) acrylic acid ester as a main monomer in order to form a crosslinked structure in the polymer skeleton. May be good. Such polyfunctional monomers include, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropanthry (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (ie polyglycidyl (meth) acrylate), polyester Examples thereof include (meth) acrylate and urethane (meth) acrylate. As the polyfunctional monomer for the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. The ratio of the polyfunctional monomer in all the monomer components for forming the acrylic polymer is preferable in order to appropriately express the basic properties such as the adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12. It is 40% by mass or less, more preferably 30% by mass or less.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the method for manufacturing a semiconductor device in which the dicing tape 10 or the dicing die bond film X is used, it is preferable that the amount of low molecular weight substances in the pressure-sensitive adhesive layer 12 in the dicing tape 10 or the dicing die bond film X is small. The number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3 million.

The pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may contain, for example, an external cross-linking agent in order to increase the number average molecular weight of the base polymer such as an acrylic polymer. Examples of the external cross-linking agent for reacting with a base polymer such as an acrylic polymer to form a cross-linked structure include a polyisocyanate compound, an epoxy compound, a polyol compound (polyphenol-based compound, etc.), an aziridine compound, and a melamine-based cross-linking agent. .. The content of the external cross-linking agent in the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 is preferably 5 parts by mass or less, and more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the base polymer.

Examples of the above-mentioned radiopolymerizable monomer component for forming a radiation-curable pressure-sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol tetra (meth). Examples include acrylates, dipentaerythritol monohydroxypenta (meth) acrylates, dipentaerythritol hexa (meth) acrylates, and 1,4-butanediol di (meth) acrylates. Examples of the above-mentioned radiopolymerizable oligomer component for forming a radiation-curable pressure-sensitive adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and have a molecular weight of about 100 to 30,000. The one is suitable. The total content of the radiation-polymerizable monomer component and the oligomer component in the radiation-curable pressure-sensitive adhesive is determined within a range in which the adhesive strength of the formed pressure-sensitive adhesive layer 12 can be appropriately reduced, and a base polymer such as an acrylic polymer is used. For example, it is 5 to 500 parts by mass, preferably 40 to 150 parts by mass with respect to 100 parts by mass. Further, as the additive-type radiation-curable pressure-sensitive adhesive, for example, those disclosed in Japanese Patent Application Laid-Open No. 60-196956 may be used.

The radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 contains, for example, a polymer side chain having a functional group such as a radiation-polymerizable carbon-carbon double bond, or a base polymer having a functional group at the end of the polymer main chain in the polymer main chain. There is also an intrinsic radiation-curable pressure-sensitive adhesive. Such an intrinsic radiation-curable pressure-sensitive adhesive is suitable for suppressing an unintended change over time in the pressure-sensitive adhesive properties due to the movement of low molecular weight components in the pressure-sensitive adhesive layer 12 to be formed.

As the base polymer contained in the intrinsic radiation-curable pressure-sensitive adhesive, a polymer having an acrylic polymer as a basic skeleton is preferable. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer can be adopted. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer. After obtaining the compound, a compound having a predetermined functional group (second functional group) and a radiopolymerizable carbon-carbon double bond that can react with the first functional group to be bonded is carbon-carbon. Examples thereof include a method of subjecting an acrylic polymer to a condensation reaction or an addition reaction while maintaining the radiation polymerizable property of the double bond.

Examples of the combination of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group. And hydroxy groups. Of these combinations, a combination of a hydroxy group and an isocyanate group or a combination of an isocyanate group and a hydroxy group is preferable from the viewpoint of easiness of reaction tracking. Further, it is technically difficult to prepare a polymer having a highly reactive isocyanate group, but from the viewpoint of easy preparation or availability of an acrylic polymer, the first functionality on the acrylic polymer side is described above. It is more preferable that the group is a hydroxy group and the second functional group is an isocyanate group. In this case, examples of the isocyanate compound having both a radiopolymerizable carbon-carbon double bond and an isocyanate group as a second functional group include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, and m-isopropenyl-α. Examples include α-dimethylbenzyl isocyanate. Further, as the acrylic polymer with the first functional group, those containing a monomer unit derived from the above-mentioned hydroxy group-containing monomer are preferable, and 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glucol are suitable. Those containing a monomer unit derived from an ether-based compound such as monovinyl ether are also suitable.

The radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphor. Included are quinone, halogenated ketones, acylphosphinoxides, and acylphosphonates. Examples of α-ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, and 2-methyl-2-hydroxypro. Examples include piophenone and 1-hydroxycyclohexylphenyl ketone. Examples of acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio)-. Phenyl] -2-morpholinopropane-1 can be mentioned. Examples of benzoin ether compounds include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal-based compound include benzyldimethyl ketal. Examples of the aromatic sulfonyl chloride compound include 2-naphthalene sulfonyl chloride. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of benzophenone compounds include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of thioxanthone compounds include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl. Thioxanthone is mentioned. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of a base polymer such as an acrylic polymer.

The above-mentioned heat-foaming type pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is a pressure-sensitive agent containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands by heating. Examples thereof include foaming agents and organic foaming agents, and examples of the heat-expandable microspheres include microspheres having a structure in which a substance that easily gasifies and expands by heating is sealed in a shell. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium boron hydride, and azides. Examples of the organic foaming agent include alkane hydrochlorides such as trichloromonofluoromethane and dichloromonofluoromethane, azo compounds such as azobisisobutyronitrile, azodicarboxylicamide, and barium azodicarboxylate, and paratoluenesulfonyl. Hydrazide and diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis (benzenesulfonylhydrazide), allylbis (sulfonylhydrazide) and other hydrazine compounds, p-toluylenesulfonyl semicarbazide and 4,4'-oxybis Semicarbazide compounds such as (benzenesulfonyl semicarbazide), triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole, as well as N, N'-dinitrosopentamethylenetetramine and N, N'-dimethyl. Examples thereof include N-nitroso compounds such as -N, N'-dinitrosoterephthalamide. Examples of substances that easily gasify and expand by heating for forming the above-mentioned heat-expandable microspheres include isobutane, propane, and pentane. A heat-expandable microsphere can be produced by encapsulating a substance that easily gasifies and expands by heating in a shell-forming substance by a core selvation method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal meltability or a substance that can burst due to the action of thermal expansion of the encapsulating substance can be used. Such substances include, for example, vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethylmethacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.

Examples of the above-mentioned non-reducing adhesive strength type adhesive include a pressure-sensitive pressure-sensitive adhesive and a pressure-sensitive pressure-sensitive adhesive, which is obtained by pre-curing the above-mentioned radiation-curable pressure-sensitive adhesive by irradiation with radiation. Be done. In the pressure-sensitive adhesive layer 12 of the present embodiment, one kind of non-reducing adhesive strength type adhesive may be used, or two or more kinds of non-reducing pressure-sensitive adhesive strength may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed of a non-adhesive strength non-reducing type pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a non-adhesive strength-reducing type pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a non-reduced adhesive strength type adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 12 may be a non-reduced pressure-sensitive adhesive. It may be formed from a pressure-sensitive adhesive, and other parts may be formed from a pressure-reducing pressure-sensitive adhesive. Further, when the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers forming the laminated structure may be formed of a non-adhesive strength non-reducing type adhesive, and some layers in the laminated structure may be a non-adhesive strength non-reducing type. It may be formed from an adhesive.

Adhesives in the form of a radiation-curable adhesive that has been cured by irradiation in advance (irradiated radiation-curable adhesive) are adherent due to the polymer components contained even if the adhesive strength is reduced by irradiation. It exhibits properties and is capable of exerting the minimum adhesive strength required for the dicing tape adhesive layer in a diving process or the like. In the present embodiment, when the radiation-irradiated radiation-curable pressure-sensitive adhesive is used, the entire pressure-sensitive adhesive layer 12 may be formed from the radiation-irradiated radiation-curable pressure-sensitive adhesive in the surface spreading direction of the pressure-sensitive adhesive layer 12. A part of the pressure-sensitive adhesive layer 12 may be formed from a radiation-irradiated radiation-curable pressure-sensitive adhesive, and another part may be formed from a radiation-non-irradiated radiation-curable pressure-sensitive adhesive.

The dicing die bond film X containing the irradiated radiation-curable pressure-sensitive adhesive in at least a part of the pressure-sensitive adhesive layer 12 can be produced, for example, through the following process. First, a pressure-sensitive adhesive layer (radiation-curable pressure-sensitive adhesive layer) made of a radiation-curable pressure-sensitive adhesive is formed on the base material 11 of the dicing tape 10. Next, a predetermined part or the whole of the radiation-curable pressure-sensitive adhesive layer is irradiated with radiation to form a pressure-sensitive adhesive layer containing at least a part of the irradiated radiation-curable pressure-sensitive adhesive. Next, an adhesive layer to be the adhesive layer 20 described later is formed on the pressure-sensitive adhesive layer. After that, the pressure-sensitive adhesive layer 12 and the adhesive layer 20 are formed together by a batch processing and forming method for the pressure-sensitive adhesive layer and the adhesive layer, for example, as described later. The dicing die bond film X containing the irradiated radiation-curable pressure-sensitive adhesive in at least a part of the pressure-sensitive adhesive layer 12 can also be produced through the following process. First, a pressure-sensitive adhesive layer (radiation-curable pressure-sensitive adhesive layer) made of a radiation-curable pressure-sensitive adhesive is formed on the base material 11 of the dicing tape 10. Next, an adhesive layer to be the adhesive layer 20 described later is formed on the radiation-curable pressure-sensitive adhesive layer. Next, a predetermined part or the whole of the radiation-curable pressure-sensitive adhesive layer is irradiated with radiation to form a pressure-sensitive adhesive layer containing at least a part of the irradiated radiation-curable pressure-sensitive adhesive. After that, the pressure-sensitive adhesive layer 12 and the adhesive layer 20 are formed together by a batch processing and forming method for the pressure-sensitive adhesive layer and the adhesive layer, for example, as described later.

On the other hand, as the pressure-sensitive pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, a known or commonly used pressure-sensitive adhesive can be used, and an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive using an acrylic polymer as a base polymer can be preferably used. .. When the pressure-sensitive adhesive layer 12 contains an acrylic pressure-sensitive adhesive as a pressure-sensitive pressure-sensitive pressure-sensitive adhesive, the acrylic polymer, which is the base polymer of the acrylic pressure-sensitive adhesive, preferably contains a monomer unit derived from (meth) acrylic acid ester in a mass ratio. Included as the most abundant main monomer unit in. Examples of such an acrylic polymer include the above-mentioned acrylic polymers for radiation-curable pressure-sensitive adhesives.

In addition to the above-mentioned components, the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may contain a cross-linking accelerator, a pressure-sensitive adhesive, an anti-aging agent, a colorant such as a pigment or a dye, and the like. .. The colorant may be a compound that is colored by being irradiated with radiation. Examples of such compounds include leuco dyes.

The thickness of the pressure-sensitive adhesive layer 12 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and more preferably 5 to 25 μm. Such a configuration is suitable, for example, when the pressure-sensitive adhesive layer 12 contains a radiation-curable pressure-sensitive adhesive, in order to balance the adhesive force of the pressure-sensitive adhesive layer 12 with respect to the adhesive layer 20 before and after radiation curing. ..

The adhesive layer 20 of the dicing die bond film X has both a function as a thermosetting adhesive for die bonding and an adhesive function for holding a work such as a semiconductor wafer and a frame member such as a ring frame. Have. In the present embodiment, the adhesive for forming the adhesive layer 20 may have a composition containing a thermosetting resin and, for example, a thermoplastic resin as a binder component, or reacts with the curing agent. It may have a composition containing a thermoplastic resin with a thermosetting functional group capable of forming a bond. When the adhesive for forming the adhesive layer 20 has a composition containing a thermoplastic resin with a thermosetting functional group, the adhesive needs to contain a thermosetting resin (epoxy resin or the like). No. Such an adhesive layer 20 may have a single-layer structure or a multi-layer structure.

The adhesive layer 20 having both a function as an adhesive for die bonding and an adhesive function has an initial chuck distance of 10 mm, a frequency of 10 Hz, a dynamic strain of ± 0.5 μm, and a temperature rise for an adhesive layer sample piece having a width of 4 mm. The tensile storage elastic modulus (first tensile storage elastic modulus) at −15 ° C. measured under the condition of a speed of 5 ° C./min (tensile storage elastic modulus measurement condition) is 1000 to 4000 MPa, preferably 1200 to 3900 MPa. It is preferably 1500 to 3800 MPa. At the same time, the adhesive layer 20 has a tensile storage elastic modulus (second tensile storage elastic modulus) of 10 to 240 MPa at 23 ° C. measured under the above-mentioned tensile storage elastic modulus measurement conditions for the adhesive layer sample piece having a width of 4 mm. Yes, preferably 20 to 200 MPa, more preferably 40 to 150 MPa. The tensile storage elastic modulus can be determined based on the dynamic viscoelasticity measurement performed using a dynamic viscoelasticity measuring device (trade name "Rheogel-E4000", manufactured by UBM). In the measurement, the size of the sample piece as the object to be measured is 4 mm in width × 20 mm in length, the initial distance between the chucks for holding the sample piece is 10 mm, the measurement mode is the tension mode, and the measurement temperature range is -30 ° C. The temperature is ~ 100 ° C., the frequency is 10 Hz, the dynamic strain is ± 0.5%, and the temperature rise rate is 5 ° C./min.

The adhesive layer 20 having both a function as an adhesive for die bonding and an adhesive function is SUS in a peeling test under the conditions of -15 ° C, a peeling angle of 180 ° and a tensile speed of 300 mm / min (first condition). It exhibits a 180 ° peeling adhesive force of preferably 1N / 10 mm or more, more preferably 1.5N / 10mm or more, and more preferably 2N / 10mm or more with respect to a flat surface. In the peeling test under the first condition, the adhesive layer 20 exhibits 180 ° peeling adhesive strength of, for example, 100 N / 10 mm or less, preferably 50 N / 10 mm or less, with respect to the SUS plane. Further, the adhesive layer 20 is preferably 0.1 N / 10 mm or more with respect to the SUS plane in the peeling test under the conditions of 23 ° C., a peeling angle of 180 ° and a tensile speed of 300 mm / min (second condition). It preferably exhibits 180 ° peeling adhesive strength of 0.3 N / 10 mm or more, more preferably 0.5 N / 10 mm or more. In the peeling test under the second condition, the adhesive layer 20 exhibits 180 ° peeling adhesive strength of, for example, 20 N / 10 mm or less, preferably 10 N / 10 mm or less, with respect to the SUS plane. Such 180 ° peeling adhesive strength can be measured using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). The sample piece used for the measurement is lined with a backing tape (trade name "BT-315", manufactured by Nitto Denko KK) and has a size of 20 mm in width and 100 mm in length. The sample piece is bonded to the SUS plate, which is the adherend, by a crimping operation in which a 2 kg roller is reciprocated once. In this measurement, the measurement temperature or peeling temperature is -15 ° C (first condition) or 23 ° C (second condition), the peeling angle is 180 °, and the tensile speed is 300 mm / min. ..

When the adhesive layer 20 contains a thermosetting resin together with a thermoplastic resin, the thermosetting resin includes, for example, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and heat. Examples thereof include curable polyimide resin. In forming the adhesive layer 20, one kind of thermosetting resin may be used, or two or more kinds of thermosetting resins may be used. Epoxy resin is preferable as the thermosetting resin contained in the adhesive layer 20 because the content of ionic impurities and the like that can cause corrosion of the semiconductor chip to be die-bonded tends to be small. Further, as the curing agent for the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type and orthocresol. Examples thereof include novolak type, trishydroxyphenylmethane type, tetraphenylol ethane type, hydantin type, trisglycidyl isocyanurate type, and glycidylamine type epoxy resins. Novolac type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylol ethane type epoxy resin are adhesives because they are highly reactive with phenol resin as a curing agent and have excellent heat resistance. It is preferable as the epoxy resin contained in the layer 20.

Examples of the phenol resin that can act as a curing agent for the epoxy resin include novolak type phenol resin, resol type phenol resin, and polyoxystyrene such as polyparaoxystyrene. Examples of the novolak type phenol resin include phenol novolac resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin. As the phenol resin that can act as a curing agent for the epoxy resin, one kind of phenol resin may be used, or two or more kinds of phenol resins may be used. Phenol novolac resin and phenol aralkyl resin tend to improve the connection reliability of the adhesive when used as a curing agent for the epoxy resin as an adhesive for die bonding. Therefore, the epoxy contained in the adhesive layer 20 Preferable as a resin curing agent.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the adhesive layer 20, the phenol resin preferably has 0 hydroxyl groups per equivalent amount of epoxy groups in the epoxy resin component. It is contained in an amount of .5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

Examples of the thermoplastic resin contained in the adhesive layer 20 include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, and ethylene-acrylic acid ester copolymer. , Polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, and fluororesin. Be done. In forming the adhesive layer 20, one kind of thermoplastic resin may be used, or two or more kinds of thermoplastic resins may be used. As the thermoplastic resin contained in the adhesive layer 20, an acrylic resin is preferable because it has few ionic impurities and high heat resistance, so that it is easy to secure the bonding reliability by the adhesive layer 20. Further, from the viewpoint of achieving both adhesiveness of the adhesive layer 20 to the ring frame described later at room temperature and temperatures in the vicinity thereof and prevention of residue during peeling, the adhesive layer 20 is used as a main component of the thermoplastic resin. , It is preferable to contain a polymer having a glass transition temperature of −10 to 10 ° C. The main component of the thermoplastic resin is a resin component that occupies the largest mass ratio among the thermoplastic resin components.

As the glass transition temperature of the polymer, the glass transition temperature (theoretical value) obtained based on the Fox formula below can be used. The Fox formula is a relational expression between the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of the homopolymer for each constituent monomer in the polymer. In the Fox formula below, Tg represents the glass transition temperature (° C.) of the polymer, Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (° C.) of the homopolymer of the monomer i. ) Is shown. Literature values can be used for the glass transition temperature of homopolymers, such as "New Polymer Bunko 7 Introduction to Synthetic Resins for Paints" (Kyozo Kitaoka, Polymer Publishing Association, 1995) and "Acrylic Ester Catalog (1997)". (Annual version) ”(Mitsubishi Rayon Co., Ltd.) lists the glass transition temperatures of various homopolymers. On the other hand, the glass transition temperature of the homopolymer of the monomer can also be determined by the method specifically described in JP-A-2007-51271.
Fox formula 1 / (273 + Tg) = Σ [Wi / (273 + Tgi)]

The acrylic resin contained as the thermoplastic resin in the adhesive layer 20 preferably contains a monomer unit derived from the (meth) acrylic acid ester as the main monomer unit having the largest mass ratio. As such a (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above for the acrylic polymer as one component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be used. can. The acrylic resin contained as the thermoplastic resin in the adhesive layer 20 may contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid ester. Such other monomer components include, for example, functionalities such as a carboxy group-containing monomer, an acid anhydride monomer, a hydroxy group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide, and acrylonitrile. Group-containing monomers and various polyfunctional monomers can be mentioned. Specifically, an acrylic polymer which is a component of a radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be copolymerized with a (meth) acrylic acid ester. Other monomers similar to those described above can be used. From the viewpoint of achieving high cohesive force in the adhesive layer 20, the acrylic resin contained in the adhesive layer 20 is preferably a (meth) acrylic acid ester (particularly, an alkyl group having 4 or less carbon atoms (in particular, an alkyl group having 4 or less carbon atoms). A copolymer of (meth) acrylic acid alkyl ester), a carboxy group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (particularly a polyglycidyl-based polyfunctional monomer), more preferably ethyl acrylate. , Butyl acrylate, acrylic acid, acrylonitrile, and polyglycidyl (meth) acrylate.

The content ratio of the thermosetting resin in the adhesive layer 20 is preferably 5 to 60% by mass, more preferably 10 to 50, from the viewpoint of appropriately exhibiting the function as a thermosetting adhesive in the adhesive layer 20. It is mass%.

When the adhesive layer 20 contains a thermoplastic resin having a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming this thermosetting functional group-containing acrylic resin preferably contains a monomer unit derived from (meth) acrylic acid ester as the main monomer unit having the largest mass ratio. As such a (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above for the acrylic polymer as one component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be used. can. On the other hand, examples of the thermosetting functional group for forming a thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Of these, a glycidyl group and a carboxy group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxy group-containing acrylic resin can be preferably used. Further, as the curing agent for the thermosetting functional group-containing acrylic resin, for example, the above-mentioned external cross-linking agent may be used as a component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12. can. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenol compound can be preferably used as the curing agent, and for example, the above-mentioned various phenol resins can be used.

In order to achieve a certain degree of cross-linking of the adhesive layer 20 before being cured for die bonding, for example, it reacts with the functional groups at the molecular chain ends of the above-mentioned resin contained in the adhesive layer 20. It is preferable to add a polyfunctional compound that can be bonded to the resin composition for forming an adhesive layer as a cross-linking agent. Such a configuration is suitable for improving the adhesive properties of the adhesive layer 20 at high temperatures and for improving the heat resistance. Examples of such a cross-linking agent include polyisocyanate compounds. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylenediocyanate, 1,5-naphthalene diisocyanate, and adducts of polyhydric alcohol and diisocyanate. The content of the cross-linking agent in the resin composition for forming the adhesive layer is such that the cohesive force of the adhesive layer 20 formed is improved with respect to 100 parts by mass of the resin having the above-mentioned functional group that can react and bond with the cross-linking agent. From the viewpoint, it is preferably 0.05 parts by mass or more, and from the viewpoint of improving the adhesive force of the adhesive layer 20 to be formed, it is preferably 7 parts by mass or less. Further, as the cross-linking agent in the adhesive layer 20, another polyfunctional compound such as an epoxy resin may be used in combination with the polyisocyanate compound.

The content ratio of the high molecular weight component as described above in the adhesive layer 20 is preferably 50 to 100% by mass, and more preferably 50 to 80% by mass. The high molecular weight component is a component having a weight average molecular weight of 10,000 or more. Such a configuration is preferable in order to achieve both the adhesiveness of the adhesive layer 20 to the ring frame described later at room temperature and the temperature in the vicinity thereof and the prevention of the residue at the time of peeling. Further, the adhesive layer 20 may contain a liquid resin that is liquid at 23 ° C. When the adhesive layer 20 contains such a liquid resin, the content ratio of the liquid resin in the adhesive layer 20 is preferably 1 to 10% by mass, more preferably 1 to 5% by mass. Such a configuration is preferable in order to achieve both the adhesiveness of the adhesive layer 20 to the ring frame described later at room temperature and the temperature in the vicinity thereof and the prevention of the residue at the time of peeling.

The adhesive layer 20 may contain a filler. By blending the filler into the adhesive layer 20, the elastic modulus such as the tensile storage elastic modulus of the adhesive layer 20 and the physical properties such as conductivity and thermal conductivity can be adjusted. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are particularly preferable. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, and crystals. In addition to quality silica and amorphous silica, simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon black and graphite can be mentioned. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. As the filler in the adhesive layer 20, one kind of filler may be used, or two or more kinds of fillers may be used. In order to ensure the adhesiveness of the adhesive layer 20 to the ring frame in the low-temperature expanding step described later, the filler content in the adhesive layer 20 is preferably 30% by mass or less, more preferably 25% by mass or less.

When the adhesive layer 20 contains a filler, the average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. The configuration in which the average particle size of the filler is 0.005 μm or more is suitable for realizing high wettability and adhesiveness to an adherend such as a semiconductor wafer in the adhesive layer 20. The configuration in which the average particle size of the filler is 10 μm or less is suitable for enjoying a sufficient filler addition effect in the adhesive layer 20 and ensuring heat resistance. The average particle size of the filler can be determined using, for example, a luminous intensity type particle size distribution meter (trade name “LA-910”, manufactured by HORIBA, Ltd.).

The adhesive layer 20 may contain other components, if necessary. Examples of the other component include a flame retardant, a silane coupling agent, and an ion trapping agent. Flame retardants include, for example, antimony trioxide, antimony pentoxide, and brominated epoxy resins. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, hydroxide-containing antimony (for example, "IXE-300" manufactured by Toa Synthetic Co., Ltd.), and zirconium phosphate having a specific structure (for example, "IXE-300" manufactured by Toa Synthetic Co., Ltd.). IXE-100 "), magnesium silicate (for example," Kyoward 600 "manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (for example," Kyoward 700 "manufactured by Kyowa Chemical Industry Co., Ltd.). A compound capable of forming a complex with a metal ion can also be used as an ion trapping agent. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridyl-based compounds. Of these, a triazole-based compound is preferable from the viewpoint of the stability of the complex formed with the metal ion. Examples of such triazole compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-). 5-Methylphenyl) Benzotriazole, 2- (2-Hydroxy-3,5-di-t-Butylphenyl) -5-Chlorobenzotriazole, 2- (2-Hydroxy-3-t-Butyl-5-Methylphenyl) )-5-Chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) benzotriazole, 6- (2) -Benzotriazolyl) -4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1- (2,3-dihydroxypropyl) benzotriazole, 1- (1) , 2-Dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t-pentyl-6-{(H-benzotriazole-1-yl) methyl} phenol, 2, -(2-Hydroxy-5-t-butylphenyl) -2H-benzotriazole, octyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2-H-benzotriazole-2-yl) Phenyl] propionate, 2-ethylhexyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazole-2-yl) phenyl] propionate, 2- (2H-benzotriazole-2) -Il) -6- (1-Methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazole-2-yl) -4-t -Butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) -benzotriazole, 2- (3-t-butyl-2-hydroxy-5) -Methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-Chloro-benzotriazole, 2- [2-hydroxy-3,5-di (1,1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2) H-benzotriazole-2-yl) -4- (1,1,3,3-tetramethylbutyl) phenol] 2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] Examples thereof include -2H-benzotriazole and methyl-3- [3- (2H-benzotriazole-2-yl) -5-t-butyl-4-hydroxyphenyl] propionate. Further, a predetermined hydroxyl group-containing compound such as a quinol compound, a hydroxyanthraquinone compound, and a polyphenol compound can also be used as an ion trap agent. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthralphin, tannin, gallate, methyl gallate, and pyrogallol. As the other components as described above, one kind of component may be used, or two or more kinds of components may be used.

The thickness of the adhesive layer 20 is, for example, in the range of 1 to 200 μm. The upper limit of the thickness is preferably 100 μm, more preferably 80 μm. The lower limit of the thickness is preferably 3 μm, more preferably 5 μm.

In the present embodiment, the dicing die bond film X has a laminated structure including a base material 11, an adhesive layer 12, and an adhesive layer 20 and continuous over an inner region R2 and an outer region R1. The thickness of such a dicing die bond film X is preferably uniform over the outer region R1 and the inner region R2. Further, in the present embodiment, in the in-plane direction D of the dicing die bond film X, the outer peripheral end 20e of the adhesive layer 20 is separated from the outer peripheral end 11e of the base material 11 and the outer peripheral end 12e of the adhesive layer 12 in the dicing tape 10. The distance is within 1000 μm, preferably within 500 μm. That is, the outer peripheral end 20e of the adhesive layer 20 covers the entire circumference in the film in-plane direction D from 1000 μm inside to 1000 μm outside, preferably 500 μm inside to 500 μm outside, with respect to the outer peripheral end 11e of the base material 11. It is between 1000 μm on the inner side and 1000 μm on the outer side, preferably between 500 μm on the inner side and 500 μm on the outer side with respect to the outer peripheral end 12e of the pressure-sensitive adhesive layer 12. In the configuration in which the dicing tape 10 or the adhesive layer 12 thereof and the adhesive layer 20 on the dicing tape 10 have substantially the same dimensions in the in-plane direction D, the adhesive layer 20 is added to the area where the work is attached. It will include the area where the frame is attached.

The dicing die bond film X may be accompanied by a separator S as shown in FIG. Specifically, each dicing die bond film X may be in the form of a sheet with a separator S, or the separator S is long and a plurality of dicing die bond films X are arranged on the separator S. May be rolled into the form of a roll. The separator S is an element for coating and protecting the surface of the adhesive layer 20 of the dicing die bond film X, and is peeled off from the dicing die bond film X when it is used. Examples of the separator S include polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, plastic film and paper surface-coated with a release agent such as a fluorine-based release agent and a long-chain alkyl acrylate-based release agent. Be done. The thickness of the separator S is, for example, 5 to 200 μm.

The dicing die bond film X having the above structure can be produced, for example, as follows.

As shown in FIG. 3A, the sheet body to be processed and formed on the dicing tape 10 of the dicing die bond film X is formed on the base material 11'that is processed and formed on the base material 11. , It can be produced by providing the pressure-sensitive adhesive layer 12'that will be processed and formed on the pressure-sensitive adhesive layer 12. The resin base material 11'is produced by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a coextrusion method, or a dry laminating method. be able to. A predetermined surface treatment is applied to the film or the base material 11'after the film formation, if necessary. In the formation of the pressure-sensitive adhesive layer 12', for example, after preparing a pressure-sensitive adhesive solution for forming the pressure-sensitive adhesive layer, the pressure-sensitive adhesive solution is first applied on the base material 11'or a predetermined separator to apply the pressure-sensitive adhesive. Form a film. Examples of the method of applying the pressure-sensitive adhesive solution include roll coating, screen coating, and gravure coating. Next, in this pressure-sensitive adhesive coating film, a cross-linking reaction is caused if necessary by heating, and the solvent is removed if necessary. The heating temperature is, for example, 80 to 150 ° C., and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 12'is formed on the separator, the pressure-sensitive adhesive layer 12'with the separator is attached to the base material 11', and then the separator is peeled off. As described above, the sheet body tape 10'that will be processed and formed into the dicing tape 10 can be produced.

On the other hand, as shown in FIG. 3B, an adhesive film 20'that is processed and formed on the adhesive layer 20 is produced. In the production of the adhesive film 20', after preparing the adhesive composition for forming the adhesive layer, first, the adhesive composition is applied on the separator S to form the adhesive composition layer. Examples of the coating method of the adhesive composition layer include roll coating, screen coating, and gravure coating. Next, in this adhesive composition layer, heating causes a cross-linking reaction, if necessary, and desolvents, if necessary. The heating temperature is, for example, 70 to 160 ° C., and the heating time is, for example, 1 to 5 minutes. As described above, the adhesive film 20'with the separator S can be produced.

In the production of the dicing die bond film X, next, as shown in FIG. 3C, the adhesive layer 12'side of the above-mentioned tape 10'and the adhesive film 20'are pressure-bonded and bonded to each other. As a result, a laminated sheet body having a laminated structure including the separator S, the adhesive film 20', the pressure-sensitive adhesive layer 12', and the base material 11'is produced. In this step, the bonding temperature is, for example, 30 to 50 ° C, preferably 35 to 45 ° C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm, preferably 1 to 10 kgf / cm. When the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer as described above, when the pressure-sensitive adhesive layer 12'is irradiated with radiation such as ultraviolet rays after the adhesive film 20'is bonded, for example, the base of the tape 10'. perform radiation 'from the side of the pressure-sensitive adhesive layer 12' timber 11 in its dose is, for example, 50 to 500 mJ / cm ^2, preferably 100~300mJ / cm ^2. The irradiation region is, for example, the entire adhesive layer 12 that comes into close contact with the adhesive layer 20. Further, in the present invention, even when the pressure-sensitive adhesive layer 12'or the pressure-sensitive adhesive layer 12 is designed as a radiation-curable pressure-sensitive adhesive layer such as an ultraviolet-curable type, the adhesive film 20'or the adhesive layer Reference numeral 20 denotes a configuration that does not cure by irradiation with radiation such as ultraviolet rays.

Next, as shown in FIG. 3 (d), the laminated sheet body is subjected to a process in which a processing blade is inserted from the side of the base material 11'to the separator S (in FIG. 3 (d), the cutting portion is formed. Is schematically represented by a thick line). For example, while flowing the laminated sheet body in one direction F at a constant speed, a rotary roll with a processing blade is rotatably arranged around an axis orthogonal to the direction F and a processing blade for punching is attached to the roll surface (illustrated). The surface with the processing blade of (omitted) is brought into contact with the base material 11'side of the laminated sheet body with a predetermined pressing force. As a result, the dicing tape 10 (base material 11, adhesive layer 12) and the adhesive layer 20 are collectively processed and formed, and the dicing die bond film X is formed on the separator S. After that, as shown in FIG. 3 (e), the material laminated portion around the dicing die bond film X is removed from the separator S.

As described above, the dicing die bond film X can be manufactured.

In the manufacturing process of a semiconductor device, as described above, in order to obtain a semiconductor chip with an adhesive layer, an expanding step performed by using a dicing die bond film, that is, an expanding step for cutting may be carried out. At some point, in the expanding step, it is necessary that a breaking force acts appropriately on the die bond film on the dicing tape and the work such as the semiconductor wafer. In the dicing die bond film X, the dicing die bond film X is derived from the inner region R2 of the film with respect to the first tensile stress at −15 ° C. of the first test piece derived from the outer region R1 from the outer peripheral edge to the inner side 20 mm. The value of the ratio of the second tensile stress at −15 ° C. of the second test piece is 0.9 to 1.1, preferably 0.95 to 1.05. Such a configuration is formed by the dicing die bond film X containing the outer region R1 and the inner region R2 in the low temperature expanding step for cutting carried out at -15 ° C., which is lower than room temperature, and the temperature in the vicinity thereof. Suitable for equalizing the degree of elongation. Therefore, the dicing die bond film X having the above structure is suitable for equalizing the breaking force acting on the adhesive layer 20 and the work on the dicing tape 10 in the low temperature expanding step, and cuts the dicing die bond film X satisfactorily. Suitable for.

The dicing die bond film X in which the degree of elongation at the time of expansion is made uniform in this way is such that the adhesive layer 20 includes the frame attachment area in addition to the work attachment area, and the dicing tape 10 or its adhesion thereof. It is possible to design the agent layer 12 and the adhesive layer 20 on the agent layer 12 with substantially the same dimensions in the in-plane direction of the film. As in the present embodiment, a design is adopted in which the outer peripheral edge of the adhesive layer 20 is within 1000 μm from each outer peripheral edge of the adhesive layer 12 of the dicing tape 10 in the in-plane direction of the dicing die bond film X. Is possible. Such a dicing die bond film X has a process for forming one dicing tape 10 having a laminated structure of a base material 11 and an adhesive layer 12 and a process for forming one adhesive layer 20. , Suitable for batch implementation such as one punching process. Such a dicing die bond film X is suitable for satisfactorily cutting the adhesive layer 20 in the expanding step as described above, and is efficient from the viewpoint of reducing the number of manufacturing steps and suppressing the manufacturing cost. Suitable for manufacturing.

As described above, the dicing die bond film X has a laminated structure including a base material 11, an adhesive layer 12, and an adhesive layer 20 and continuous over the inner region R2 and the outer region R1. Further, the thickness of the dicing die bond film X is preferably uniform over the inner region R2 and the outer region R1 as described above. These configurations are preferable in order to realize the above-mentioned good splittability in the expanding step.

The first tensile stress and the second tensile stress at −15 ° C. in the dicing die bond film X are preferably 5 N or more, more preferably 8 N or more, and more preferably 10 N or more, as described above. Such a configuration is preferable in order to secure a breaking force acting on the adhesive layer 20 when the dicing die bond film X is expanded at a temperature of −15 ° C. or its vicinity. The first tensile stress and the second tensile stress at −15 ° C. in the dicing die bond film X are preferably 28 N or less, more preferably 25 N or less, and more preferably 20 N or less, as described above. Such a configuration is preferable in order to suppress peeling between the adhesive layer 12 and the adhesive layer 20 of the dicing tape 10 when the dicing die bond film X is expanded at a temperature of −15 ° C. or its vicinity.

As described above, the adhesive layer 20 of the dicing die bond film X is preferably 1N / 10 mm or more with respect to the SUS plane in the peeling test under the conditions of −15 ° C., peeling angle 180 ° and tensile speed 300 mm / min. It more preferably has a 180 ° peeling adhesive force of 1.5 N / 10 mm or more, more preferably 2 N / 10 mm or more. Further, in the peeling test under the same conditions, the adhesive layer 20 exhibits 180 ° peeling adhesive strength of, for example, 100 N / 10 mm or less, preferably 50 N / 10 mm or less, with respect to the SUS plane. The structure relating to the adhesive force is suitable for ensuring the holding of the frame member by the dicing die bond film X at a temperature of −15 ° C., which is lower than room temperature, and a temperature in the vicinity thereof.

Regarding the first test piece in the dicing die bond film X, the third tensile stress generated at a strain value of 30% and the second test in a tensile test performed under the conditions of an initial chuck distance of 20 mm, 23 ° C., and a tensile speed of 300 mm / min. As described above, the fourth tensile stress generated at a strain value of 30% in the tensile test performed under the same conditions (initial chuck distance 20 mm, 23 ° C., tensile speed 300 mm / min) for the piece is preferably 1 N or more. , More preferably 3N or more, more preferably 5N or more. Such a configuration is suitable for equalizing the degree of elongation when the dicing die bond film X including the outer region R1 and the inner region R2 is expanded at a temperature of 23 ° C. or its vicinity. Further, these third tensile stress and fourth tensile stress are preferably 20 N or less, more preferably 15 N or less, and more preferably 10 N or less, as described above. Such a configuration is suitable for suppressing peeling between the adhesive layer 12 and the adhesive layer 20 of the dicing tape 10 when the dicing die bond film X is expanded at a temperature of 23 ° C. or its vicinity. ..

The value of the ratio of the fourth tensile stress to the third tensile stress in the dicing die bond film X is preferably 0.95 to 1.05 as described above. Such a configuration is suitable for equalizing the degree of elongation when the dicing die bond film X including the outer region R1 and the inner region R2 is expanded at a temperature of 23 ° C. or its vicinity.

As described above, the adhesive layer 20 of the dicing die bond film X is preferably 0.1 N / 10 mm or more with respect to the SUS plane in the peeling test under the conditions of 23 ° C., a peeling angle of 180 ° and a tensile speed of 300 mm / min. , More preferably 0.3 N / 10 mm or more, more preferably 0.5 N / 10 mm or more, 180 ° peeling adhesive strength. Such a configuration is suitable for ensuring the holding of the frame member by the dicing die bond film X at a temperature of 23 ° C. or its vicinity. Further, as described above, the adhesive layer 20 exhibits 180 ° peeling adhesive strength of, for example, 20 N / 10 mm or less, preferably 10 N / 10 mm or less, with respect to the SUS plane in the peeling test under the same conditions. Such a configuration is suitable for suppressing the formation of an adhesive residue on the frame member when the frame member such as the ring frame is peeled off from the adhesive layer 20 of the dicing die bond film X.

4 to 9 show a semiconductor device manufacturing method according to an embodiment of the present invention.

In the present semiconductor device manufacturing method, first, as shown in FIGS. 4A and 4B, a dividing groove 30a is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held in a state where the semiconductor wafer W is held by the wafer processing tape T1. A dividing groove 30a having a predetermined depth is formed on the first surface Wa side by using a rotating blade such as a dicing device. The dividing groove 30a is a gap for separating the semiconductor wafer W into semiconductor chip units (in FIGS. 4 to 6, the dividing groove 30a is schematically represented by a thick line).

Next, as shown in FIG. 4C, the wafer processing tape T2 having the adhesive surface T2a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 from the semiconductor wafer W is attached. Is peeled off.

Next, as shown in FIG. 4D, with the semiconductor wafer W held by the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. (Wafer thinning process). The grinding process can be performed using a grinding device equipped with a grinding wheel. By this wafer thinning step, in this embodiment, a semiconductor wafer 30A that can be fragmented is formed on a plurality of semiconductor chips 31. Specifically, the semiconductor wafer 30A has a portion (connecting portion) for connecting a portion of the wafer to be fragmented into a plurality of semiconductor chips 31 on the second surface Wb side. The thickness of the connecting portion of the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 μm, preferably 3 to 20 μm. Is.

Next, as shown in FIG. 5A, the semiconductor wafer 30A held on the wafer processing tape T2 is bonded to the adhesive layer 20 of the dicing die bond film X. After that, as shown in FIG. 5B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die-bond film X is a radiation-curable pressure-sensitive adhesive layer, the semiconductor wafer 30A is attached to the adhesive layer 20 instead of the above-mentioned irradiation in the manufacturing process of the dicing die-bond film X. After the combination, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the side of the base material 11. Irradiation dose is, for example, 50 to 500 mJ / cm ^2, preferably 100~300mJ / cm ^2. In the dicing die bond film X, the region where the pressure-sensitive adhesive layer 12 is irradiated as a measure for reducing the adhesive strength (irradiation region L shown in FIG. 1) is, for example, the peripheral edge of the pressure-sensitive adhesive layer 12 in the adhesive layer 20 bonding region. This is the area excluding the part.

Next, after the ring frame 41 is attached on the adhesive layer 20 of the dicing die bond film X, as shown in FIG. 6A, the dicing die bond film X with the semiconductor wafer 30A is used as a holder for the expanding device. It is fixed to 42.

Next, the first expanding step (cool expanding step) under relatively low temperature conditions is performed as shown in FIG. 6B, and the semiconductor wafer 30A is fragmented into a plurality of semiconductor chips 31. At the same time, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain a semiconductor chip 31 with an adhesive layer. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised in contact with the dicing tape 10 at the lower side in the drawing of the dicing die bond film X, and the dicing of the dicing die bond film X to which the semiconductor wafer 30A is bonded is diced. The tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed under the condition that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the dicing tape 10. The temperature condition in the cool expanding step is, for example, 0 ° C. or lower, preferably -20 to -5 ° C., more preferably -15 to -5 ° C., and more preferably -15 ° C. The expanding speed (the speed at which the push-up member 43 rises) in the cool expanding step is preferably 0.1 to 100 mm / sec. The amount of expansion in the cool expanding step is preferably 3 to 16 mm.

In this step, the thin-walled and fragile portion of the semiconductor wafer 30A is split, resulting in individualization into the semiconductor chip 31. At the same time, in this step, deformation is suppressed in each region where each semiconductor chip 31 is in close contact with the adhesive layer 20 which is in close contact with the adhesive layer 12 of the expanded dicing tape 10, while the semiconductor chip is suppressed. The tensile stress generated in the dicing tape 10 acts on the portion facing the dividing groove between the 31's in a state where such a deformation suppressing action does not occur. As a result, the portion of the adhesive layer 20 facing the dividing groove between the semiconductor chips 31 is cut. After this step, as shown in FIG. 6C, the push-up member 43 is lowered to release the expanded state of the dicing tape 10.

Next, the second expanding step under relatively high temperature conditions is performed as shown in FIG. 7A, and the distance (separation distance) between the semiconductor chips 31 with the adhesive layer is increased. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised again, and the dicing tape 10 of the dicing die bond film X is expanded. The temperature condition in the second expanding step is, for example, 10 ° C. or higher, preferably 15 to 30 ° C. The expanding speed (the speed at which the push-up member 43 rises) in the second expanding step is, for example, 0.1 to 10 mm / sec, preferably 0.3 to 1 mm / sec. The amount of expansion in the second expanding step is, for example, 3 to 16 mm. In this step, the separation distance of the semiconductor chip 31 with the adhesive layer is widened to the extent that the semiconductor chip 31 with the adhesive layer can be appropriately picked up from the dicing tape 10 in the pick-up step described later. After this step, as shown in FIG. 7B, the push-up member 43 is lowered to release the expanded state of the dicing tape 10. In order to prevent the separation distance of the semiconductor chip 31 with the adhesive layer on the dicing tape 10 from being narrowed after the expanding state is released, the portion of the dicing tape 10 outside the semiconductor chip 31 holding region before the expanding state is released. It is preferable to heat and shrink.

Next, a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 10 with the semiconductor chip 31 with an adhesive layer using a cleaning liquid such as water is performed as necessary, and then, as shown in FIG. 8, the adhesive is used. The layered semiconductor chip 31 is picked up from the dicing tape 10 (pickup process). For example, with respect to the semiconductor chip 31 with an adhesive layer to be picked up, the pin member 44 of the pick-up mechanism is raised on the lower side in the drawing of the dicing tape 10 to be pushed up through the dicing tape 10, and then sucked and held by the suction jig 45. do. In the pick-up step, the push-up speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 44 is, for example, 50 to 3000 μm.

Next, as shown in FIG. 9A, the picked-up semiconductor chip 31 with an adhesive layer is temporarily fixed to a predetermined adherend 51 via the adhesive layer 21. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive force at 25 ° C. at the time of temporary fixing of the adhesive layer 21 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 51. The structure in which the shearing adhesive force of the adhesive layer 21 is 0.2 MPa or more is such that the adhesive surface between the adhesive layer 21 and the semiconductor chip 31 or the adherend 51 is formed by ultrasonic vibration or heating in the wire bonding step described later. It is suitable for appropriately performing wire bonding while suppressing the occurrence of shear deformation. Further, the shear adhesive force at 175 ° C. at the time of temporary fixing of the adhesive layer 21 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa with respect to the adherend 51.

Next, as shown in FIG. 9B, the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the adherend 51 are electrically connected via the bonding wire 52 ((not shown). Wire bonding process). The connection between the electrode pad of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 is realized by ultrasonic welding accompanied by heating, and is performed so as not to heat-cure the adhesive layer 21. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature in wire bonding is, for example, 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is several seconds to several minutes.

Next, as shown in FIG. 9C, the semiconductor chip 31 is sealed with the sealing resin 53 for protecting the semiconductor chip 31 and the bonding wire 52 on the adherend 51 (sealing step). In this step, the adhesive layer 21 is thermally cured. In this step, for example, the sealing resin 53 is formed by a transfer molding technique performed using a mold. As the constituent material of the sealing resin 53, for example, an epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. If the curing of the sealing resin 53 does not proceed sufficiently in this step (sealing step), a post-curing step for completely curing the sealing resin 53 is performed after this step. Even if the adhesive layer 21 is not completely thermoset in the sealing step, the adhesive layer 21 can be completely thermoset together with the sealing resin 53 in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C., and the heating time is, for example, 0.5 to 8 hours.

As described above, the semiconductor device can be manufactured.

In the present embodiment, as described above, after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51, the wire bonding step is performed without the adhesive layer 21 being completely thermoset. Instead of such a configuration, in the present invention, after the semiconductor chip 31 with an adhesive layer is temporarily fixed to the adherend 51, the adhesive layer 21 may be thermoset and then the wire bonding step may be performed. ..

In the semiconductor device manufacturing method according to the present invention, the wafer thinning step shown in FIG. 10 may be performed instead of the wafer thinning step described above with reference to FIG. 4 (d). After going through the above-mentioned process with reference to FIG. 4 (c), in the wafer thinning step shown in FIG. 10, the wafer is brought to a predetermined thickness while the semiconductor wafer W is held by the wafer processing tape T2. The semiconductor wafer split body 30B including the plurality of semiconductor chips 31 and held on the wafer processing tape T2 is formed by being thinned by grinding from the second surface Wb. In this step, a method of grinding the wafer until the dividing groove 30a itself is exposed on the second surface Wb side (first method) may be adopted, or from the second surface Wb side to the dividing groove 30a. A method of grinding the wafer to the front and then forming a crack between the dividing groove 30a and the second surface Wb by the action of a pressing force from the rotary grindstone to the wafer to form the semiconductor wafer divided body 30B (second). Method) may be adopted. Depending on the method adopted, the depth of the dividing groove 30a formed as described above with reference to FIGS. 4 (a) and 4 (b) from the first surface Wa is appropriately determined. .. In FIG. 10, the dividing groove 30a that has undergone the first method, the dividing groove 30a that has undergone the second method, and the cracks connected thereto are schematically represented by thick lines. In the present invention, the semiconductor wafer divided body 30B thus produced is bonded to the dicing die bond film X instead of the semiconductor wafer 30A, and then the above-described steps are performed with reference to FIGS. 5 to 9. You may.

11 (a) and 11 (b) show a first expanding step (cool expanding step) performed after the semiconductor wafer divided body 30B is bonded to the dicing die bond film X. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised in contact with the dicing tape 10 at the lower side in the drawing of the dicing die bond film X, and the dicing die bond film X to which the semiconductor wafer divided body 30B is bonded is attached. The dicing tape 10 of the above is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B. This expansion is performed on the dicing tape 10 under the condition that a tensile stress is generated in the range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa. The temperature condition in this step is, for example, 0 ° C. or lower, preferably -20 to -5 ° C., more preferably -15 to -5 ° C., and more preferably -15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is, for example, 1 to 400 mm / sec. The amount of expansion in this step is, for example, 50 to 200 mm. By such a cool expanding step, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain a semiconductor chip 31 with an adhesive layer. Specifically, in this step, the adhesive layer 20 in close contact with the adhesive layer 12 of the expanded dicing tape 10 is deformed in each region in which each semiconductor chip 31 of the semiconductor wafer divided body 30B is in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the portion of the semiconductor chip 31 facing the dividing groove 30a without such a deformation suppressing action. As a result, the portion of the adhesive layer 20 facing the dividing groove 30a between the semiconductor chips 31 is cut.

In the semiconductor device manufacturing method according to the present invention, instead of the above-described configuration in which the semiconductor wafer 30A or the semiconductor wafer split 30B is bonded to the dicing die bond film X, the semiconductor wafer 30C produced as follows is used. It may be bonded to the dicing die bond film X.

As shown in FIGS. 12 (a) and 12 (b), first, the modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. In this step, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held inside the wafer while being held by the wafer processing tape T3. Laser light with the same light spots is applied to the semiconductor wafer W from the side opposite to the wafer processing tape T3 along the planned division line, and into the semiconductor wafer W due to ablation due to multiphoton absorption. A modified region 30b is formed. The modified region 30b is a fragile region for separating the semiconductor wafer W into semiconductor chip units. A method of forming a modified region 30b on a planned division line on a semiconductor wafer by laser light irradiation is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. It is adjusted appropriately within the range of the following conditions.
<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser Wavelength 1064 nm
Laser light spot cross-sectional area 3.14 × 10 ^-8 cm ²
Oscillation form Q-switched pulse repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00
Polarization characteristics Linearly polarized light (B) Condensing lens Magnification 100 times or less NA 0.55
Transmittance with respect to laser light wavelength 100% or less (C) Moving speed of mounting table on which the semiconductor substrate is placed 280 mm / sec or less

Next, as shown in FIG. 12 (c), with the semiconductor wafer W held by the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. As a result, a semiconductor wafer 30C that can be fragmented is formed on a plurality of semiconductor chips 31 (wafer thinning step). In the present invention, the semiconductor wafer 30C produced as described above is bonded to the dicing die bond film X instead of the semiconductor wafer 30A, and then the above-described steps are performed with reference to FIGS. 5 to 9. May be good.

13 (a) and 13 (b) show a first expanding step (cool expanding step) performed after the semiconductor wafer 30C is bonded to the dicing die bond film X. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised in contact with the dicing tape 10 at the lower side in the drawing of the dicing die bond film X, and the dicing of the dicing die bond film X to which the semiconductor wafer 30C is bonded is diced. The tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expansion is performed on the dicing tape 10 under the condition that a tensile stress is generated in the range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa. The temperature condition in this step is, for example, 0 ° C. or lower, preferably -20 to -5 ° C., more preferably -15 to -5 ° C., and more preferably -15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is, for example, 1 to 400 mm / sec. The amount of expansion in this step is, for example, 50 to 200 mm. By such a cool expanding step, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain a semiconductor chip 31 with an adhesive layer. Specifically, in this step, cracks are formed in the fragile modified region 30b of the semiconductor wafer 30C, and individualization into the semiconductor chip 31 occurs. At the same time, in this step, in the adhesive layer 20 that is in close contact with the adhesive layer 12 of the expanded dicing tape 10, deformation is suppressed in each region of the semiconductor wafer 30C in which each semiconductor chip 31 is in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the portion of the wafer facing the crack-forming portion without such a deformation suppressing effect. As a result, the portion of the adhesive layer 20 facing the crack-forming portion between the semiconductor chips 31 is cut.

Further, in the present invention, the dicing die bond film X can be used to obtain a semiconductor chip with an adhesive layer as described above, but an adhesive when a plurality of semiconductor chips are laminated and three-dimensionally mounted. It can also be used to obtain a layered semiconductor chip. A spacer may or may not be interposed between the semiconductor chips 31 in such a three-dimensional mounting together with the adhesive layer 21.

[Example 1]
<Making dicing tape>
In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirrer, 100 mol parts of dodecyl acrylate, 20 mol parts of 2-hydroxyethyl acrylate (2HEA), and 100 parts by mass of these monomer components. A mixture containing 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 60 ° C. for 10 hours in a nitrogen atmosphere (polymerization reaction). As a result, a polymer solution containing the _{acrylic polymer P 1 was obtained.} The weight average molecular weight (Mw) of the acrylic polymer P _{1 in the polymer solution was 450,000.} Next, a mixture containing the polymer solution containing the acrylic polymer P ₁ , 2-methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurylate as an addition reaction catalyst was mixed at room temperature for 48 hours in an air atmosphere. Stirred (addition reaction). In the reaction solution, the amount of MOI compounded was 20 mol parts with respect to 100 mol parts of the above dodecyl acrylate, and the molar ratio of the MOI compounded amount to the total amount of the 2HEA-derived unit or its hydroxyl group in the _{acrylic polymer P 1 was} It is 1. Further, in the reaction solution, the blending amount of dibutyltin dilaurylate is 0.03 part by mass with respect to 100 parts by mass _{of the acrylic polymer P 1.} By this addition reaction, a polymer solution containing _{an acrylic polymer P 2} having a methacrylate group in the side chain was obtained. Next, in the polymer solution, 1 part by mass of the polyisocyanate compound (trade name "Coronate L", manufactured by Toso Co., Ltd.) and 2 parts by mass of the photopolymerization initiator (2 parts by mass) with respect to 100 parts by mass _{of the acrylic polymer P 2} Add and mix with the trade name "Irgacure 127" (manufactured by BASF), and add toluene to dilute the mixture so that the viscosity of the mixture at room temperature becomes 500 mPa · s to obtain a pressure-sensitive adhesive solution. rice field. Next, an adhesive solution is applied on the silicone release-treated surface of a PET separator (thickness 38 μm) having a silicone release-treated surface using an applicator to form a coating film, and this coating film is formed. Was dried by heating at 130 ° C. for 2 minutes to form a 10 μm-thick pressure-sensitive adhesive layer on the PET separator. The thickness of the pressure-sensitive adhesive layer was measured using a dial gauge (trade name "C-7HS", manufactured by Ozaki Seisakusho Co., Ltd.). Next, using a laminator, a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB-0104", thickness 130 μm, manufactured by Kurabo Industries Ltd.) was used on the exposed surface of this pressure-sensitive adhesive layer. Was bonded at room temperature. As described above, the dicing tape according to Example 1 was produced.

<Preparation of adhesive layer>
Acrylic resin A ₁ (polymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1.2 million, glass transition temperature 0 ° C, epoxy value 0.4 eq / kg) 100 parts by mass , Phenol resin (trade name "8210DL", manufactured by Gunei Chemical Industry Co., Ltd.) and 25 parts by mass of epoxy resin (trade name "KI-3000", manufactured by Mitsubishi Chemical Co., Ltd.) are added to methyl ethyl ketone. The mixture was mixed and the concentration was adjusted so that the viscosity at room temperature was 700 mPa · s to obtain an adhesive composition. Next, the adhesive composition is applied on the silicone release-treated surface of the PET separator (thickness 38 μm) having the silicone release-treated surface using an applicator to form a coating film, and this coating is applied. The membrane was heat-dried at 130 ° C. for 2 minutes. As described above, the adhesive layer having a thickness of 7 μm in Example 1 was prepared on the PET separator. The thickness of the adhesive layer was measured using a dial gauge (trade name "C-7HS", manufactured by Ozaki Seisakusho Co., Ltd.).

<Preparation of dicing die bond film>
After peeling the PET separator from the dicing tape described above, the pressure-sensitive adhesive layer exposed on the dicing tape and the adhesive layer described above with the separator were bonded together at room temperature using a laminator to obtain a laminated sheet body. Next, the laminated sheet body was punched by inserting a processing blade from the EVA base material side of the dicing tape to the separator. As a result, a disk-shaped dicing die bond film having a diameter of 370 mm was formed on the separator.

[Example 2]
The adhesive layer of Example 2 was prepared on the PET separator in the same manner as the adhesive layer of Example 1 except that the thickness of the adhesive layer was 10 μm instead of 7 μm. Then, the dicing die bond film of Example 2 was produced in the same manner as the dicing die bond film of Example 1 except that the adhesive layer of Example 2 was used instead of the adhesive layer of Example 1.

[Example 3]
The adhesive layer of Example 3 was prepared on the PET separator in the same manner as the adhesive layer of Example 1 except that the thickness of the adhesive layer was 20 μm instead of 7 μm. Then, the dicing die bond film of Example 3 was produced in the same manner as the dicing die bond film of Example 1 except that the adhesive layer of Example 3 was used instead of the adhesive layer of Example 1.

[Comparative Examples 1 and 2]
In the preparation of the adhesive layer, the thickness of the adhesive layer was changed to 20 μm (Comparative Example 1) or 7 μm (Comparative Example 2) instead of 10 μm, and the dicing tape and the adhesive layer (die bond film) had different sizes. Each dicing die bond film of Comparative Examples 1 and 2 was produced in the same manner as the dicing die bond film of Example 1 except that the two were bonded together after being punched separately in. In each of Comparative Examples 1 and 2, the dicing tape was punched to a diameter of 370 mm with a separator, and the die bond film was punched to a diameter of 330 mm with a separator. The bonding was performed while aligning the center of the dicing tape and the center of the die bond film so as to coincide with each other.

[Comparative Example 3]
In the preparation of the adhesive layer, the thickness of the adhesive layer was set to 5 μm (Comparative Example 3) instead of 10 μm, and the dicing tape and the adhesive layer (die bond film) were separately punched in different sizes, and then both were punched separately. The dicing die bond film of Comparative Example 3 was produced in the same manner as the dicing die bond film of Example 1 except that the adhesive layer of the dicing tape was irradiated with ultraviolet rays from the side of the base material. bottom. The dicing tape was punched to a diameter of 370 mm with a separator, and the die bond film was punched to a diameter of 330 mm with a separator. The bonding was performed while aligning the center of the dicing tape and the center of the die bond film so as to coincide with each other. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the integrated irradiation light amount was set to 350 mJ / cm ² . As described above, the dicing die bond film of Comparative Example 3 having a laminated structure including the dicing tape and the adhesive layer was produced.

[Tensile stress at -15 ° C]
Tensile tester (trade name "Autograph AGS-J") was used for the first test piece cut out from the outer region from the outer peripheral end to the inner side 20 mm in each of the dicing die bond films of Examples 1 to 3 and Comparative Examples 1 to 3. , Shimadzu Corporation) was used to perform a tensile test, and the tensile stress generated at a strain value of 30% was measured. Each first test piece has a length of 50 mm and a width of 10 mm extending in the MD direction within the outer region of the dicing die bond film. Five first test pieces were prepared for each dicing die bond film of Examples 1 to 3 and Comparative Examples 1 to 3. In this tensile test, the initial distance between chucks is 20 mm, the temperature condition is −15 ° C., and the tensile speed is 300 mm / min. The average value of the measured values of the five first test pieces derived from the same dicing die bond film was taken as the tensile stress (first tensile stress) at −15 ° C. in the first test piece of the dicing die bond film. The values of the obtained first tensile stress are listed in Table 1.

Tensile testers (trade name "Autograph AGS-J"), for the second test piece cut out from the inner region inside the outer region of each dicing die bond film of Examples 1 to 3 and Comparative Examples 1 to 3. A tensile test was performed using Shimadzu Corporation), and the tensile stress generated at a strain value of 30% was measured. Each second test piece has a length of 50 mm and a width of 10 mm extending in the MD direction within the inner region of the dicing die bond film. Five second test pieces were prepared for each dicing die bond film of Examples 1 to 3 and Comparative Examples 1 to 3. In this tensile test, the initial chuck distance is 20 mm, the temperature condition is −15 ° C., and the tensile speed is 300 mm / min. The average value of the measured values of the five second test pieces derived from the same dicing die bond film was taken as the tensile stress (second tensile stress) at −15 ° C. in the second test piece of the dicing die bond film. The values of the obtained second tensile stress are listed in Table 1. The value of the ratio of the second tensile stress to the first tensile stress is also listed in Table 1.

[Tensile stress at 23 ° C]
Tensile tester (trade name "Autograph AGS-J") was used for the first test piece cut out from the outer region from the outer peripheral end to the inner side 20 mm in each of the dicing die bond films of Examples 1 to 3 and Comparative Examples 1 to 3. , Shimadzu Corporation) was used to perform a tensile test, and the tensile stress generated at a strain value of 30% was measured. Each first test piece has a length of 50 mm and a width of 10 mm extending in the MD direction within the outer region of the dicing die bond film. Five first test pieces were prepared for each dicing die bond film of Examples 1 to 3 and Comparative Examples 1 to 3. In this tensile test, the initial distance between chucks is 20 mm, the temperature condition is 23 ° C., and the tensile speed is 300 mm / min. The average value of the measured values of the five first test pieces derived from the same dicing die bond film was taken as the tensile stress (third tensile stress) at 23 ° C. in the first test piece of the dicing die bond film. The values of the obtained third tensile stress are listed in Table 1.

Tensile testers (trade name "Autograph AGS-J"), for the second test piece cut out from the inner region inside the outer region of each dicing die bond film of Examples 1 to 3 and Comparative Examples 1 to 3. A tensile test was performed using Shimadzu Corporation), and the tensile stress generated at a strain value of 30% was measured. Each second test piece has a length of 50 mm and a width of 10 mm extending in the MD direction within the inner region of the dicing die bond film. Five second test pieces were prepared for each dicing die bond film of Examples 1 to 3 and Comparative Examples 1 to 3. In this tensile test, the initial distance between chucks is 20 mm, the temperature condition is 23 ° C., and the tensile speed is 300 mm / min. The average value of the measured values of the five second test pieces derived from the same dicing die bond film was taken as the tensile stress (fourth tensile stress) at 23 ° C. in the second test piece of the dicing die bond film. The values of the obtained fourth tensile stress are listed in Table 1. The value of the ratio of the fourth tensile stress to the third tensile stress is also listed in Table 1.

<Adhesive strength of adhesive layer>
The adhesive layer in each dicing die bond film of Examples 1 to 3 and Comparative Examples 1 to 3 was examined for 180 ° peeling adhesive strength at −15 ° C. as follows. First, the adhesive layer is peeled off from the dicing tape, and a backing tape (trade name "BT-315", manufactured by Nitto Denko KK) is attached to the side surface of the adhesive layer that has been attached to the dicing tape. A sample piece (width 10 mm × length 100 mm) was cut out from the backing film. Next, the sample piece was attached to a SUS plate as an adherend, and the sample piece and the adherend were crimped by a crimping operation in which a 2 kg roller was reciprocated once. Then, after leaving it at room temperature for 30 minutes, a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation) is used to peel and adhere the adhesive layer sample piece to the SUS plate by 180 °. The force was measured. In this measurement, the measurement temperature or the peeling temperature was −15 ° C., the tensile angle was 180 °, and the tensile speed was 300 mm / min. In the tensile test, the average value of the peeling force after excluding the peeling force shown at the first 10 mm / min was defined as 180 ° peeling adhesive force (N / 10 mm). Further, with respect to the adhesive layer in each dicing die bond film of Examples 1 to 3 and Comparative Examples 1 to 3, 180 ° peeling adhesive force at -15 ° C except that the measurement temperature was set to 23 ° C instead of -15 ° C. In the same manner as the measurement, the 180 ° peeling adhesive strength at 23 ° C. was measured. The results of these measurements are listed in Table 1.

[Evaluation of splittability]
Using the dicing die bond films of Examples 1 to 3 and Comparative Examples 1 to 3, the following bonding step, the first expanding step for cutting (cool expanding step), and the first for separating. 2 Expanding step (normal temperature expanding step) was performed.

In the bonding process, the semiconductor wafer segment held on the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) is bonded to the adhesive layer of the dicing die bond film, and then the semiconductor wafer. The wafer processing tape was peeled off from the divided body. In the bonding, a laminator was used, the bonding speed was 10 mm / sec, the temperature condition was 60 ° C., and the pressure condition was 0.15 MPa. Further, the semiconductor wafer divided body is formed and prepared as follows. First, about the bare wafer (diameter 12 inches, thickness 780 μm, manufactured by Tokyo Kako Co., Ltd.) held together with the ring frame on the wafer processing tape (trade name “V12S-R2-P”, manufactured by Nitto Denko Corporation). , From the side of one side, a dicing device (trade name "DFD6260", manufactured by DISCO Corporation) is used, and a dividing groove for individualization (width 25 μm, depth 50 μm, one section 6 mm ×) is used by the rotating blade. A 12 mm grid) was formed. Next, a wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko KK) is attached to the dividing groove forming surface, and then the above wafer processing tape (trade name "V12S-R2-P") is attached. Was peeled off from the wafer. After that, the wafer is reduced to a thickness of 20 μm by grinding from the other surface (the surface on which the dividing groove is not formed) of the wafer using a back grind device (trade name “DGP8760”, manufactured by DISCO Inc.). It was thinned to the point where the ground surface was mirror-finished by dry polishing using the device. As described above, the semiconductor wafer divided body (in a state of being held by the wafer processing tape) was formed. The semiconductor wafer segment contains a plurality of semiconductor chips (6 mm × 12 mm).

The cool expanding step was carried out in the cool expanding unit using a die separating device (trade name "Die Separator DDS2300", manufactured by DISCO Corporation). Specifically, first, a 12-inch diameter SUS ring frame (manufactured by DISCO Inc.) is placed in the frame attachment area (around the work attachment area) of the adhesive layer in the above-mentioned dicing die bond film with the semiconductor wafer split body. ) Was pasted at room temperature. Next, the dicing die bond film was set in the apparatus, and the dicing tape of the dicing die bond film accompanied by the semiconductor wafer divided body was expanded by the cool expanding unit of the apparatus. In this cool expanding step, the temperature is −15 ° C., the expanding speed is 100 mm / sec, and the expanding amount is 7 mm.

The normal temperature expanding step was carried out in the normal temperature expanding unit using a die separate device (trade name "Die Separator DDS2300", manufactured by DISCO Corporation). Specifically, the dicing tape of the dicing die bond film with the semiconductor wafer divided body that has undergone the above-mentioned cool expanding step was expanded by the room temperature expanding unit of the same apparatus. In this normal temperature expanding step, the temperature is 23 ° C., the expanding speed is 1 mm / sec, and the expanding amount is 10 mm. After that, the dicing die bond film that had undergone normal temperature expansion was subjected to a heat shrinkage treatment. The treatment temperature is 200 ° C. and the treatment time is 20 seconds.

In the steps as described above using the dicing die bond films of Examples 1 to 3 and Comparative Examples 1 to 3, the adhesive was divided with respect to the total number of semiconductor chips contained in the semiconductor wafer segment. The ratio of the total number of semiconductor chips with layers was investigated. Then, regarding the splittability of the adhesive layer, a case where the ratio was 80% or more was evaluated as good (◯), and a case where the ratio was less than 80% was evaluated as poor (x). The evaluation results are listed in Table 1.

[evaluation]
In the dicing die bond films of Examples 1 to 3, the value of the ratio of the second tensile stress to the first tensile stress is in the range of 0.9 to 1.1. According to the dicing die bond films of Examples 1 to 3, the dicing die bond films of Comparative Examples 1 to 3 in which the value of the ratio of the second tensile stress to the first tensile stress is not in the range of 0.9 to 1.1. In the expanding step at −15 ° C., it was possible to satisfactorily separate (cut) the semiconductor chip with the adhesive layer.

X Dicing Die Bond Film R1, R1'Outer Region R2, R2' Inner Region 10 Dicing Tape 11 Base Material 11e Outer Edge 12 Adhesive Layer 12e Outer Edge 20, 21 Adhesive Layer 20e Outer Edge W, 30A, 30C Semiconductor Wafer 30B Semiconductor Wafer splitting body 30a Dividing groove 30b Dicing region 31 Semiconductor chip

Claims (8)

A dicing tape having a laminated structure including a base material and an adhesive layer,
The dicing tape is provided with an adhesive layer that is detachably adhered to the adhesive layer.
Regarding the following first test piece The following second test piece with respect to the first tensile stress generated at a strain value of 30% in a tensile test conducted under the conditions of an initial chuck distance of 20 mm, -15 ° C, and a tensile speed of 300 mm / min. initial inter-chuck distance 20 mm, the value of the ratio of the second tensile stress generated at -15 ° C., and tensile strain value of 30% in a tensile test performed at a speed 300 mm / min condition, Ri 0.9-1.1 der ,
The first tensile stress and the second tensile stress Ru 5~28N der dicing die-bonding film.
First test piece: A test piece having a length of 50 mm and a width of 10 mm extending in one direction, cut out from the outer region from the outer peripheral edge to the inner side of the dicing die bond film. Second test piece: The outer side of the dicing die bond film. A test piece having a length of 50 mm and a width of 10 mm extending in one direction, which is cut out from the inner region inside the region. The dicing die bond film according to claim 1, further comprising the base material, the pressure-sensitive adhesive layer, and the adhesive layer, and having a laminated structure continuous over the inner region and the outer region. The dicing die bond film according to claim 1 or 2, wherein the thickness is uniform over the inner region and the outer region. Claims 1 to 3 show that the adhesive layer exhibits 180 ° peeling adhesive strength of 1 N / 10 mm or more with respect to a SUS plane in a peeling test under the conditions of −15 ° C., peeling angle 180 ° and tensile speed 300 mm / min. The dicing die bond film according to any one of the above. The initial chuck distance for the first test piece is 20 mm, 23 ° C., and the initial chuck distance for the second test piece is the third tensile stress generated at a strain value of 30% in the tensile test performed under the conditions of a tensile speed of 300 mm / min. The fourth method according to any one of claims 1 to 4, wherein the fourth tensile stress generated at a strain value of 30% in a tensile test conducted under the conditions of 20 mm, 23 ° C., and a tensile speed of 300 mm / min is 1 to 20 N. Dicing Die bond film. The dicing die bond film according to claim 5 , wherein the value of the ratio of the fourth tensile stress to the third tensile stress is 0.95 to 1.05. From claim 1, the adhesive layer exhibits 180 ° peeling adhesive strength of 0.1 N / 10 mm or more with respect to a SUS plane in a peeling test under the conditions of 23 ° C., a peeling angle of 180 ° and a tensile speed of 300 mm / min. The dicing die bond film according to any one of 6. The dicing die bond film according to any one of claims 1 to 7 , wherein the outer peripheral edge of the adhesive layer is at a distance within 1000 μm from the outer peripheral edge of the adhesive layer in the in-plane direction of the film.

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