JP7041475B2 - Manufacturing method of dicing tape, dicing die bond film, and semiconductor device - Google Patents

Description

The present invention relates to a method for manufacturing a dicing tape, a dicing die bond film, and a semiconductor device. More specifically, the present invention relates to a dicing tape, a dicing die bond film using the dicing tape, and a method for manufacturing a semiconductor device using the dicing die bond film.

Conventionally, a dicing tape or a dicing die bond film may be used in the manufacture of a semiconductor device. The dicing tape has a form in which an adhesive layer is provided on a base material, and a semiconductor wafer is arranged on the adhesive layer so that individualized semiconductor chips do not scatter during dicing (cutting) of the semiconductor wafer. It is used for fixing to a wafer (see, for example, Patent Document 1).

The dicing die bond film is provided on the adhesive layer of the dicing tape so that the die bond film can be peeled off. In the manufacture of a semiconductor device, a semiconductor wafer is held on a dicing film of a dicing die bond film, and the semiconductor wafer is diced into individual semiconductor chips. After that, the semiconductor chip is peeled off from the dicing tape together with the die bond film, and the semiconductor chip is fixed to an adherend such as a lead frame via the die bond film.

When a dicing dicing film in which a dicing film is laminated on a dicing tape is used and a semiconductor wafer is diced while holding the dicing film, it is necessary to cut the dicing film at the same time as the semiconductor wafer. However, in a general dicing method using a diamond blade, adhesion between the die bond film and the dicing tape due to the influence of heat generated during dicing, adhesion between semiconductor chips due to generation of cutting chips, and cutting chips on the side surface of the semiconductor chip. Since there is a concern about the adhesion of diamonds, it is necessary to slow down the cutting speed, which has led to an increase in cost.

Therefore, in recent years, a method of obtaining individual semiconductor chips by forming a groove on the surface of a semiconductor wafer and then performing backside grinding (sometimes referred to as "DBG (Dicing Before Grinding)") (for example, Patent Document 2). (See) or by irradiating the planned division line of the semiconductor wafer with laser light to form a modified region, the semiconductor wafer can be easily divided on the planned division line, and then this semiconductor wafer is used as a dicing die bond film. After sticking, the dicing tape is expanded at a low temperature (for example, -25 to 0 ° C.) (hereinafter, may be referred to as “cool expand”) to cut the semiconductor wafer and the dicing film together. A method for obtaining an individual semiconductor chip (semiconductor chip with a dicing film) has been proposed (see, for example, Patent Document 3). This is a so-called stealth dicing (registered trademark) method. Further, also in DBG, a method is also known in which the obtained individual semiconductor chips are attached to a dicing die bond film, and then the dicing tape is cool-expanded to cut the die bond film to obtain individual semiconductor chips with a dicing die bond film. Has been done.

Japanese Unexamined Patent Publication No. 2011-216563 Japanese Patent Application Laid-Open No. 2003-007649 Japanese Unexamined Patent Publication No. 2009-164556

In DBG, stealth dicing, etc., after dicing the dicing film, the dicing die bond film is expanded at around room temperature (hereinafter, may be referred to as "normal temperature expanded"), and the distance between adjacent semiconductor chips with the die bond film. Then, the outer peripheral portion of the semiconductor chip is thermally shrunk (hereinafter, may be referred to as “heat shrink”) to fix the semiconductor chips while widening the distance between the semiconductor chips. The chip can be easily picked up.

In recent years, due to the need for higher capacity semiconductors, the number of circuit layers has been increased and the number of silicon layers has been reduced. However, as the thickness (total thickness) of the circuit layer increases due to the multi-layered circuit layer, the proportion of the resin contained in the circuit layer tends to increase, so that the multi-layered circuit layer and the thin layer are formed. The difference in linear expansion rate from the layered silicon layer becomes remarkable, and the semiconductor chip tends to warp. Therefore, in particular, a semiconductor chip having a multi-layered circuit layer with a dicing film, which is obtained after dicing, is used at the interface between the adhesive layer of the dicing tape and the dicing film during normal temperature expansion and thereafter (for example, until picking up). Floating (peeling) was likely to occur during the period.

The present invention has been made in view of the above problems, and an object thereof is a dicing tape in which a semiconductor chip with a dicing film is less likely to float during and after room temperature expansion, a dicing die bond film using the dicing tape, and a dicing die bond film using the dicing tape. An object of the present invention is to provide a method for manufacturing a semiconductor device using the dicing die bond film.

As a result of diligent studies to achieve the above object, the present inventors have found that the stress relaxation rate after aging after stretching by 30% at room temperature is equal to or more than a specific value, and the stress value after aging is equal to or less than a specific value. It has been found that when a certain dicing tape is used, floating is unlikely to occur even when a semiconductor chip having a multi-layered circuit layer is used during and after the room temperature expansion. The present invention has been completed based on these findings.

That is, the present invention has a base material and a pressure-sensitive adhesive layer laminated on the base material, and has a stress relaxation rate 1000 seconds after stretching by 30% under a temperature condition of 23 ° C. in at least one direction. Provided is a dicing tape having a stress value of 45% or more and a stress value of 4 MPa or less 1000 seconds after stretching by 30% under the temperature condition of 23 ° C. in at least one direction.

When expanding the dicing tape at room temperature, stress is generated on the dicing tape. The generated stress then diffuses and disappears, but usually it takes a long time to disappear, so that it remains in the dicing tape for a long time. The present inventors apply the stress generated and remaining in this way to the bottom surface (particularly, the end thereof) of the semiconductor chip with the die-bonded film which is separated into pieces on the dicing tape, so that the die-bonded film is expanded at room temperature and thereafter. We obtained the knowledge that the floating of the attached semiconductor chip occurs. In particular, in the case of a semiconductor chip having a multi-layered circuit layer, it tends to warp as described above, so that the larger the ratio of the circuit layers, the more easily the semiconductor chip with the die bond film floats.

However, the dicing tape of the present invention has a stress relaxation rate of 45% or more 1000 seconds after stretching by 30% under a temperature condition of 23 ° C. in at least one direction, and at 23 ° C. in at least one direction. Since the stress value 1000 seconds after stretching by 30% under temperature conditions is 4 MPa or less, the stress generated during room temperature expansion is quickly reduced to a sufficiently low value, and therefore die bond is performed during and after room temperature expansion. The stress applied to the bottom surface of the semiconductor chip with film can be suppressed as much as possible. As a result, even when a semiconductor chip having a multi-layered circuit layer is used as well as a semiconductor chip having no multi-layered structure, floating is less likely to occur during and after the room temperature expansion.

Further, in the dicing tape of the present invention, the thickness of the base material is preferably 40 to 150 μm. In addition to the stress relaxation rate of the dicing tape and the stress value after 1000 seconds of stretching by 30% being within the above range, the thickness of the base material is within the above range, so that the stress is attached to the die bond film when expanding at room temperature. Since the stress is likely to be uniformly applied to the semiconductor chip and the stress is less likely to be generated and remain unbalanced, the semiconductor chip with the die bond film is less likely to float during and after the room temperature expansion.

Further, when the initial elastic modulus of the dicing film laminated on the pressure-sensitive adhesive layer in the dicing tape is high, the dicing tape of the present invention is stretched by 30% under the temperature condition of 23 ° C. in at least one direction. The stress value is preferably 5 MPa or more. In this case, it becomes easier to cut the semiconductor wafer or the die bond film at the time of cool expansion.

Further, when the initial elastic modulus of the dicing film laminated on the pressure-sensitive adhesive layer in the dicing tape is high, the dicing tape of the present invention is stretched by 30% under the temperature condition of 23 ° C. in at least one direction. The difference between the stress value and the stress value 1000 seconds after stretching by 30% under the temperature condition of 23 ° C. in at least one direction is preferably 5 MPa or more. In this case, since the stress generated when the room temperature is expanded is reduced at an early stage, the stress applied to the bottom surface of the semiconductor chip with the die bond film during and after the room temperature expansion can be suppressed as much as possible, and the circuit layer is multi-layered. Even when the above is used, floating is less likely to occur during and after the room temperature expansion.

Further, the present invention has a dicing tape and a dicing film laminated on the pressure-sensitive adhesive layer in the dicing tape, and the dicing die bond film is used by being cut by applying tensile stress. I will provide a. Such a dicing die bond film of the present invention can be split by cool expanding, and the stress generated when the dicing die bond film is expanded at room temperature is reduced to a sufficiently low value at an early stage. The stress applied to the bottom surface of the semiconductor chip can be suppressed as much as possible. As a result, even when a semiconductor chip having a multi-layered circuit layer is used as well as a semiconductor chip having no multi-layered structure while being a dicing die-bonded film capable of cutting the die-bonded film by cool expanding, at room temperature expansion. And after that, floating is unlikely to occur.

Further, the present invention is compared with the step A in which a semiconductor wafer including a plurality of semiconductor chips is divided or a semiconductor wafer that can be fragmented is attached to the plurality of semiconductor chips on the dicing die bond film side of the dicing die bond film. Step B in which the dicing tape in the dicing die bond film is expanded to obtain a semiconductor chip with a dicing film by cutting at least the dicing film under conditions of a relatively low temperature, and the dicing tape in a relatively high temperature condition. Provided is a method for manufacturing a semiconductor device, which comprises a step C of expanding the distance between the semiconductor chips with a dicing film and a step D of picking up the semiconductor chip with a dicing film. According to the method for manufacturing a semiconductor device of the present invention, the stress generated during normal temperature expansion is reduced to a sufficiently low value at an early stage, so that the stress applied to the bottom surface of the semiconductor chip with a die bond film during and after normal temperature expansion is applied. Can be suppressed as much as possible. Therefore, even when a semiconductor chip in which the die bond film can be cut by cool expand and the circuit layer is multi-layered is used as well as a semiconductor chip in which the circuit layer is multi-layered, floating occurs during and after the room temperature expansion. It is possible to provide a method for manufacturing a semiconductor device that is unlikely to occur.

The dicing tape of the present invention is less likely to cause the semiconductor chip with the die bond film to float during and after the dicing tape at room temperature. In particular, even when a semiconductor chip having a multi-layered circuit layer is used, it is difficult to cause floating. Further, the dicing die bond film using the dicing tape of the present invention is less likely to cause the semiconductor chip with the dicing film on which the semiconductor chips are laminated to float during and after the room temperature expansion.

It is sectional drawing which shows one Embodiment of the dicing tape of this invention. It is sectional drawing which shows one Embodiment of the dicing die bond film of this invention. A part of the steps in the method of manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the method of manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the method of manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the method of manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the method of manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the method of manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the modification of the method for manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the modified example of the method for manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the modification of the method for manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the modification of the method for manufacturing a semiconductor device using the dicing die bond film of the present invention is shown.

[Dicing tape]
The dicing tape of the present invention has a base material and a pressure-sensitive adhesive layer laminated on the base material. An embodiment of the dicing tape (dicing sheet) of the present invention will be described below. FIG. 1 is a schematic cross-sectional view showing an embodiment of the dicing tape of the present invention.

As shown in FIG. 1, the dicing tape 1 includes a base material 11 and a pressure-sensitive adhesive layer 12 laminated on the base material 11.

As described above, the dicing tape 1 has a stress relaxation rate of 45% or more, preferably 50% or more, more preferably 50% or more, 1000 seconds after stretching by 30% under a temperature condition of 23 ° C. in at least one direction. It is 55% or more, more preferably 60% or more. When the stress relaxation rate is 45% or more, the stress generated when the semiconductor chip is expanded at room temperature is reduced at an early stage. Therefore, the stress applied to the bottom surface of the semiconductor chip with the die bond film during and after the expansion at room temperature can be suppressed as much as possible. can. Therefore, even when a semiconductor chip having a multi-layered circuit layer is used, floating is unlikely to occur during and after the room temperature expansion. The upper limit of the stress relaxation rate is not particularly limited, and the larger the stress relaxation rate, the earlier the residual stress decreases, so that the semiconductor chip with the die bond film is less likely to float, which is preferable. In the present specification, the above-mentioned "stress relaxation rate 1000 seconds after stretching by 30% under a temperature condition of 23 ° C. in at least one direction" may be simply referred to as "stress relaxation rate".

The stress relaxation rate is the ratio of the amount of decrease from the stress value at the time of 30% stretching to the stress value after 1000 seconds with respect to the stress value at the time of stretching at 23 ° C. in at least one direction. The stress relaxation rate is obtained by the following stress relaxation rate calculation method.

<Calculation method of stress relaxation rate>
A strip-shaped test piece is obtained from the dicing tape 1 by cutting out the base material 11 into a length of 140 mm and a width of 20 mm with at least one direction as the length direction. This strip-shaped test piece was stretched (stretched) to an elongation rate of 30% by a tensile tester at a tensile speed of 100 mm / min at an initial chuck distance of 100 mm under an atmosphere of 23 ° C. and 50% RH, and then stopped. Measure the stress value in the range including 1000 seconds after the stop. Then, the stress value at the time of 30% stretching (stress value at the time of stopping the stretching) is A, and the stress value 1000 seconds after the stopping of stretching is B, and it is calculated by the following formula.
Stress relaxation rate (%) = (AB) / A × 100

As described above, the dicing tape 1 has a stress value of 1000 seconds after being stretched by 30% under the temperature condition of 23 ° C. in at least one direction (that is, the direction in which the stress relaxation rate is 45% or more). It is 4 MPa or less, preferably 3.8 MPa or less, and more preferably 3.5 MPa or less. The lower limit of the stress value is 0 MPa, and the lower the stress value, the smaller the residual stress, which is preferable because the semiconductor chip with the die bond film is less likely to float. The stress value is obtained in the process of calculating the stress relaxation rate. In the present specification, the stress value 1000 seconds after stretching 30% under the temperature condition of 23 ° C. in at least one direction may be referred to as "stress value after 1000 seconds stretching 30%".

The stress relaxation rate and the stress value after 1000 seconds of stretching by 30% may be within the above ranges in at least one direction of the dicing tape 1. Further, one direction in which the stress relaxation rate is within the above range and one direction in which the stress value after 1000 seconds of 30% stretching is within the above range are the same directions. The at least one direction is preferably the MD direction. The MD direction of the dicing tape 1 is the same as the MD direction of the base material 11.

When the initial elastic modulus of the die bond film 2 described later is high, the dicing tape 1 is not particularly limited, but under the temperature condition of 23 ° C. in at least one direction (that is, the direction in which the stress relaxation rate is 45% or more). The stress value at the time of 30% stretching (the stress value at the time of the above 30% stretching) is preferably 5 MPa or more, more preferably 6.5 MPa or more, still more preferably 8 MPa or more. The upper limit of the stress value is, for example, 30 MPa, preferably 20 MPa, and more preferably 15 MPa. When the stress value is 5 MPa or more, it becomes easier to cut the semiconductor wafer or the die bond film at the time of cool expansion. The stress value is obtained in the process of calculating the stress relaxation rate. When the initial elastic modulus of the die bond film 2 is low, the stress value at the time of stretching by 30% may be less than 5 MPa.

When the initial elastic modulus of the die bond film 2 described later is high, the dicing tape 1 is not particularly limited, but in at least one direction (that is, the direction in which the stress relaxation rate is 45% or more) at the time of stretching by 30%. The difference between the stress value and the stress value after 1000 seconds of 30% stretching [(stress value at 30% stretching)-(stress value after 1000 seconds of 30% stretching)] is preferably 5 MPa or more, more preferably. Is 5.5 MPa or more, more preferably 6 MPa or more. When the difference between the stress values is 5 MPa or more, the stress generated when the semiconductor chip is expanded at room temperature is reduced at an early stage, so that the stress applied to the bottom surface of the semiconductor chip with the die bond film during and after the expansion at room temperature can be suppressed as much as possible. Even when a semiconductor chip having multiple layers is used, floating is less likely to occur during and after room temperature expansion. The upper limit of the difference between the stress values is not particularly limited, and the larger the stress value, the earlier the residual stress decreases, so that the semiconductor chip with the die bond film is less likely to float, which is preferable. .. When the initial elastic modulus of the die bond film 2 is low, the difference between the stress values may be less than 5 MPa.

The dicing tape 1 is not particularly limited, but has a tensile strength when stretched 100% in at least one direction (preferably in the direction in which the stress relaxation rate is 45% or more) under at least one temperature condition of 0 ° C. or lower. Is preferably 10 N / 10 mm or more, and more preferably 12 N / 10 mm or more. When the tensile strength is 10 N / 10 mm or more, the stress applied during cool expansion is effectively transmitted to the modified region of the semiconductor wafer and the split portion of the die bond film, the split cross section tends to be more uniform, and the room temperature is normal. It is possible to make it more difficult for the semiconductor chip with the die bond film to float during and after the expansion.

The dicing tape 1 is not particularly limited, but preferably has heat shrinkage in at least one direction (preferably, the direction in which the stress relaxation rate is 45% or more). When the dicing tape 1 has heat shrinkage, the outer peripheral portion of the semiconductor wafer can be heat-shrinked at the time of room temperature expanding, whereby the semiconductor chips with the individualized die bond films are fixed in a widened state. Therefore, the semiconductor chip can be easily picked up.

(Base material)
The base material 11 is an element that functions as a support in the dicing tape 1 and the dicing die bond film 3 described later. The base material 11 is not particularly limited as long as the stress relaxation rate of the dicing tape 1 and the stress value after 1000 seconds of stretching at 30% are within a specific range. Examples of the base material 11 include a plastic base material (particularly a plastic film). The base material 11 may be a single layer or a laminated body of the same type or different types of base materials.

Examples of the resin constituting the plastic base material include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, and homopolyprolene. , Polybutene, Polymethylpentene, Ethylene-vinyl acetate copolymer (EVA), Ionomer, Ethylene- (meth) acrylic acid copolymer, Ethylene- (meth) acrylic acid ester (random, alternating) copolymer, Ethylene- Polyolefin resins such as butene copolymers and ethylene-hexene copolymers; polyurethane; polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate and polybutylene terephthalate (PBT); polycarbonates; polyimides; polyether ether ketones; polyetherimides Examples thereof include polyamides such as aramid and total aromatic polyamides; polyphenyl sulfides; fluororesins; polyvinyl chlorides; polyvinylidene chlorides; cellulose resins; silicone resins and the like. Only one kind of the above resin may be used, or two or more kinds of the above resin may be used. When the pressure-sensitive adhesive layer 12 is a radiation-curable type as described later, it is preferable that the base material 11 has radiation permeability.

When the base material 11 is a plastic film, the plastic film may be non-oriented or may be oriented in at least one direction (uniaxial direction, biaxial direction, etc.). When oriented in at least one direction, the plastic film is heat shrinkable in the at least one direction. If the dicing tape 1 has heat shrinkage, the outer peripheral portion of the semiconductor wafer of the dicing tape 1 can be heat-shrinked, whereby the semiconductor chips with the individualized die-bonded films are fixed in a widened state. Therefore, the semiconductor chip can be easily picked up. In order for the base material 11 and the dicing tape 1 to have isotropic heat shrinkage, the base material 11 is preferably a biaxially oriented film. The plastic film oriented in at least one direction can be obtained by stretching the unstretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.). The base material 11 and the dicing tape 1 preferably have a heat shrinkage rate of 1 to 30%, more preferably 2 to 25%, in a heat treatment test conducted under the conditions of a heating temperature of 100 ° C. and a heating time treatment of 60 seconds. , More preferably 3 to 20%, and particularly preferably 5 to 20%. The heat shrinkage rate is preferably a heat shrinkage rate in at least one direction in the MD direction and the TD direction.

The surface of the base material 11 on the pressure-sensitive adhesive layer 12 side is, for example, corona discharge treatment, plasma treatment, sand mat processing treatment, ozone exposure treatment, flame exposure treatment for the purpose of improving adhesion, retention, etc. with the pressure-sensitive adhesive layer 12. , High piezoelectric shock exposure treatment, physical treatment such as ionizing radiation treatment; chemical treatment such as chromium acid treatment; surface treatment such as easy adhesion treatment with a coating agent (undercoating agent) may be performed. Further, in order to impart antistatic ability, a conductive thin-film deposition layer containing a metal, an alloy, an oxide thereof, or the like may be provided on the surface of the base material 11.

The base material 11 is not particularly limited, but 1000 seconds after being stretched by 30% under the temperature condition of 23 ° C. in at least one direction (that is, the direction in which the stress relaxation rate of the dicing tape 1 is 45% or more). The stress relaxation rate is preferably 45% or more, more preferably 50% or more, still more preferably 55% or more, and particularly preferably 60% or more. When the stress relaxation rate of the base material 11 is 45% or more, it becomes easy to set the stress relaxation rate of the dicing tape 1 to 45% or more, and the semiconductor chip with the die bond film is more likely to float during and after the room temperature expansion. It becomes difficult to do. The upper limit of the stress relaxation rate of the base material 11 is not particularly limited, and the larger the stress relaxation rate, the easier it is for the residual stress of the dicing tape 1 to decrease at an early stage, so that the semiconductor chip with the dicing film is less likely to float, which is preferable. The stress relaxation rate of the base material 11 can be calculated by measuring the stress value using the base material 11 instead of the dicing tape 1 in the same manner as the stress relaxation rate of the dicing tape 1 described above.

The base material 11 is not particularly limited, but 1000 seconds after being stretched by 30% under the temperature condition of 23 ° C. in at least one direction (that is, the direction in which the stress relaxation rate of the dicing tape 1 is 45% or more). The stress value is preferably 4 MPa or less, more preferably 3.8 MPa or less, still more preferably 3.5 MPa or less. When the stress value is 4 MPa or less, the stress value after 30% stretching of the dicing tape 1 can be easily set to 4 MPa or less, and the semiconductor chip with the die bond film is less likely to float during and after the room temperature expansion. .. The lower limit of the stress value is 0 MPa, and the lower the stress value, the smaller the residual stress of the dicing tape 1 and the less likely it is that the semiconductor chip with the dicing film floats, which is preferable. The stress value is obtained in the process of calculating the stress relaxation rate of the base material 11.

When the initial elastic modulus of the dicing film 2 described later is high, the base material 11 is not particularly limited, but at 23 ° C. in at least one direction (that is, the direction in which the stress relaxation rate of the dicing tape 1 is 45% or more). The stress value when stretched by 30% under temperature conditions (stress value when stretched by 30%) is preferably 5 MPa or more, more preferably 6.5 MPa or more, still more preferably 8 MPa or more. The upper limit of the stress value is, for example, 30 MPa, preferably 20 MPa, and more preferably 15 MPa. When the stress value is 5 MPa or more, it becomes easy to set the stress value at the time of 30% stretching of the dicing tape 1 to 5 MPa or more, and it becomes easier to cut the semiconductor wafer or the die bond film at the time of cool expansion. The stress value is obtained in the process of calculating the stress relaxation rate of the base material 11. When the initial elastic modulus of the die bond film 2 is low, the stress value may be less than 5 MPa.

When the initial elastic modulus of the dicing film 2 described later is high, the base material 11 is not particularly limited, but the base material in at least one direction (that is, the direction in which the stress relaxation rate of the dicing tape 1 is 45% or more). The difference between the stress value at the time of 30% stretching of 11 and the stress value at the time of 30% stretching of the base material 11 after 1000 seconds [(stress value at the time of 30% stretching)-(stress value after 1000 seconds of 30% stretching)] is It is preferably 5 MPa or more, more preferably 5.5 MPa or more, still more preferably 6 MPa or more. When the difference between the stress values is 5 MPa or more, the difference between the stress values of the dicing tape 1 can be easily set to 5 MPa or more, and the stress generated when the dicing tape 1 is expanded at room temperature is reduced at an early stage. After that, the stress applied to the bottom surface of the semiconductor chip with the die bond film can be suppressed as much as possible, and even when a semiconductor chip having a multi-layered circuit layer is used, floating is less likely to occur during and after the room temperature expansion. The upper limit of the difference between the stress values is not particularly limited, and the larger the stress value, the earlier the residual stress decreases, so that the semiconductor chip with the die bond film is less likely to float, which is preferable. .. When the initial elastic modulus of the die bond film 2 is low, the difference between the stress values may be less than 5 MPa.

The thickness of the base material 11 is not particularly limited, but is, for example, 5 μm or more, preferably 40 μm or more, more preferably 50 μm or more, still more preferably 55 μm or more, and particularly preferably 60 μm or more. The upper limit of the thickness is, for example, 200 μm, preferably 180 μm, and more preferably 150 μm. In addition to the stress relaxation rate of the dicing tape 1 and the stress value after 1000 seconds of 30% stretching being within the specific range, when the thickness of the base material 11 is within the above range, the stress is generated during normal temperature expansion. Since the semiconductor chip with the die bond film is likely to be uniformly applied and the stress is less likely to be generated and remain unevenly, the semiconductor chip with the die bond film is less likely to float during and after the room temperature expansion.

(Adhesive layer)
The pressure-sensitive adhesive layer 12 is not particularly limited as long as the stress relaxation rate of the dicing tape 1 and the stress value after 1000 seconds of stretching at 30% are within a specific range, and a known or conventional pressure-sensitive adhesive layer can be used. ..

The pressure-sensitive adhesive layer 12 is not particularly limited, but preferably has a tensile storage elastic modulus (sometimes referred to as “tensile storage elastic modulus (23 ° C.)”) at a temperature condition of 23 ° C. of 1 to 100 MPa. More preferably, it is 2 to 30 MPa. When the tensile storage elastic modulus is 1 MPa or more, the semiconductor chip with a die-bonded film can be picked up more easily at the time of picking up. When the tensile storage elastic modulus is 100 MPa or less, it is possible to make it more difficult for the semiconductor chip with the die bond film from the dicing tape 1 to float from the dicing tape 1 to the pick-up after the cool expansion.

The pressure-sensitive adhesive layer 12 is not particularly limited, but has a tensile storage elastic modulus (sometimes referred to as “tensile storage elastic modulus (-15 ° C)”) at a temperature condition of −15 ° C. of 5 to 500 MPa. It is preferably, more preferably 10 to 200 MPa. When the tensile storage elastic modulus is 5 MPa or more, stress can be efficiently transmitted by the die bond film when the semiconductor wafer or the die bond film is cut. When the tensile storage elastic modulus is 500 MPa or less, it is possible to make it more difficult for the semiconductor chip with the die bond film to float from the dicing tape 1 during cool expansion.

Ratio of the tensile storage elastic modulus (23 ° C.) and the tensile storage elastic modulus (-15 ° C.) of the pressure-sensitive adhesive layer 12 [(tensile storage elastic modulus (-15 ° C.)) / (tensile storage elastic modulus (23 ° C.)) ] Is not particularly limited, but is preferably 2 or more, and more preferably 4 or more. When the above ratio is 2 or more, the die-bonded film can be more suppressed from floating from the dicing tape 1 at the time of cool expansion, and the semiconductor chip with the die-bonded film can be more easily peeled off from the dicing tape 1 at the time of pick-up. It becomes. The larger the ratio, the better, but from the viewpoint of the balance between pickup and ease of splitting, the ratio is, for example, 100 or less.

The tensile storage elastic modulus (23 ° C.) and the tensile storage elastic modulus (-15 ° C.) are obtained by measuring by the following method for measuring the tensile storage elastic modulus.
<Measurement method of tensile storage elastic modulus>
Using a pressure-sensitive adhesive layer with a thickness of 200 μm, a length of 40 mm (measurement length), and a width of 10 mm as a test piece, using a solid viscoelasticity measuring device, a frequency of 1 Hz, a temperature rise rate of 10 ° C./min, and an initial chuck distance of 22. The tensile storage elastic modulus is measured in a temperature range including 23 ° C. and −15 ° C. under the condition of 5 mm. The values at 23 ° C. and −15 ° C. at that time are read and used as the tensile storage elastic modulus (23 ° C.) and the tensile storage elastic modulus (-15 ° C.), respectively.

The pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 may be a pressure-sensitive adhesive (adhesive-reducing pressure-sensitive adhesive) capable of intentionally reducing the pressure-sensitive adhesive force by an external action such as irradiation or heating. It may be a pressure-sensitive adhesive (adhesive strength non-reducing type pressure-sensitive adhesive) whose adhesive strength is hardly or not reduced depending on the action from the outside, and is a piece of a semiconductor wafer which is individualized using the dicing die bond film 3. It can be appropriately selected according to the method and conditions of the conversion.

When a pressure-reducing pressure-sensitive adhesive is used as the pressure-sensitive adhesive, the pressure-sensitive adhesive layer 12 exhibits a relatively high adhesive strength and a relatively low adhesive strength in the manufacturing process and the usage process of the dicing die bond film 3. And can be used properly. For example, when the die bond film 2 is attached to the pressure-sensitive adhesive layer 12 of the dying tape 1 in the manufacturing process of the dying die-bond film 3, or when the dying die-bond film 3 is used in the dying step, the pressure-sensitive adhesive layer 12 is relatively high. While it is possible to suppress / prevent the floating of the adherend such as the die bond film 2 from the adhesive layer 12 by utilizing the state showing the adhesive strength, after that, the die bond film 1 to the die bond film 3 of the dicing die bond film 3 can be prevented from floating. In the pick-up process for picking up the attached semiconductor chip, the pick-up can be easily performed by reducing the adhesive force of the pressure-sensitive adhesive layer 12.

Examples of such a pressure-reducing pressure-sensitive adhesive include a radiation-curable pressure-sensitive adhesive (a pressure-sensitive adhesive), a heat-foaming type pressure-sensitive adhesive, and the like. As the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12, one kind of pressure-reducing pressure-sensitive adhesive may be used, or two or more types of pressure-reducing pressure-sensitive adhesive may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed of the pressure-reducing pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of the pressure-reducing pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 12 (for example, a semiconductor wafer). The central region, which is the region to be adhered, is formed from the adhesive strength-reducing adhesive, and other parts (for example, the region to be adhered to the wafer ring, which is outside the central region) are non-reduced adhesive strength. It may be formed from a mold adhesive.

As the radiation-curable pressure-sensitive adhesive, for example, a type of pressure-sensitive adhesive that cures by irradiation with electron beam, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used, and the type that cures by irradiation with ultraviolet rays can be used. A pressure-sensitive adhesive (ultraviolet curable pressure-sensitive adhesive) can be particularly preferably used.

The radiation-curable pressure-sensitive adhesive includes, for example, a base polymer such as an acrylic polymer and a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples include type radiation curable adhesives.

The acrylic polymer is a polymer containing a monomer unit derived from an acrylic monomer (a monomer component having a (meth) acryloyl group in the molecule) as a monomer unit of the polymer. The acrylic polymer is preferably a polymer containing a monomer unit derived from (meth) acrylic acid ester as the main monomer unit having the largest mass ratio. As the acrylic polymer, only one kind may be used, or two or more kinds may be used. Further, in the present specification, "(meth) acrylic" means "acrylic" and / or "methacrylic" (either one or both of "acrylic" and "methacrylic"), and the same applies to the others. ..

Examples of the (meth) acrylic acid ester include hydrocarbon group-containing (meth) acrylic acid esters such as (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester. Be done. Examples of the (meth) acrylic acid alkyl ester include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, and pentyl ester of (meth) acrylic acid. Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl ester, Eikosyl ester and the like. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include phenyl ester and benzyl ester of (meth) acrylic acid. As the (meth) acrylic acid ester as the main monomer for the acrylic polymer, only one kind may be used, or two or more kinds may be used. In order to appropriately develop the basic properties such as the adhesiveness of the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the (meth) acrylic acid ester as the main monomer in all the monomer components for forming the acrylic polymer is used. The ratio is preferably 40% by mass or more, more preferably 60% by mass or more.

The acrylic polymer may contain a monomer unit derived from another monomer component copolymerizable with the (meth) acrylic acid ester for the purpose of modifying the cohesive force, heat resistance and the like. Examples of the other monomer components include functional groups such as a carboxy group-containing monomer, an acid anhydride monomer, a hydroxy group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide, and acrylic nitrile. Examples include contained monomers. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride, itaconic anhydride and the like. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and 6-hydroxyhexyl (meth) acrylate. Examples thereof include 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methyl propane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate, and (meth). ) Acryloyloxynaphthalene sulfonic acid and the like can be mentioned. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacryloyl phosphate and the like. As the above-mentioned other monomer components, only one kind may be used, or two or more kinds may be used. In order to appropriately develop the basic properties such as the adhesiveness of the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of the above-mentioned other monomer components to all the monomer components for forming the acrylic polymer is 60% by mass. % Or less, more preferably 40% by mass or less.

The acrylic polymer contains a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth) acrylic acid ester as a main monomer in order to form a crosslinked structure in the polymer skeleton. You may. Examples of the polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, and penta. Elythritol di (meth) acrylate, trimethylolpropantri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (eg, polyglycidyl (meth) acrylate), polyester Examples thereof include monomers having a (meth) acryloyl group and other reactive functional groups in the molecule such as (meth) acrylate and urethane (meth) acrylate. As the polyfunctional monomer, only one kind may be used, or two or more kinds may be used. In order to appropriately develop the basic properties such as the adhesiveness of the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of the polyfunctional monomer in all the monomer components for forming the acrylic polymer is 40% by mass. % Or less, more preferably 30% by mass or less.

The acrylic polymer is obtained by subjecting one or more monomer components including an acrylic monomer to polymerization. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like.

The number average molecular weight of the acrylic polymer in the pressure-sensitive adhesive layer 12 is preferably 100,000 or more, more preferably 200,000 to 3,000,000. When the number average molecular weight is 100,000 or more, the amount of low molecular weight substances in the pressure-sensitive adhesive layer tends to be small, and contamination of the die bond film, semiconductor wafer, or the like can be further suppressed.

The radiation-curable pressure-sensitive adhesive may contain a cross-linking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be crosslinked to further reduce the low molecular weight substances in the pressure-sensitive adhesive layer 12. Examples of the cross-linking agent include polyisocyanate compounds, epoxy compounds, polyol compounds (polyphenol compounds and the like), aziridine compounds, melamine compounds and the like. When a cross-linking agent is used, the amount used is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, based on 100 parts by mass of the base polymer.

Examples of the radiation-polymerizable monomer component include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, and dipentaerythritol monohydroxypenta ( Examples thereof include meta) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and those having a molecular weight of about 100 to 30,000 are preferable. The content of the radiation-curable monomer component and the oligomer component in the radiation-curable pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 is, for example, 5 to 500 parts by mass, preferably 40 to 40 parts by mass with respect to 100 parts by mass of the base polymer. It is about 150 parts by mass. Further, as the additive-type radiation-curable pressure-sensitive adhesive, for example, those disclosed in Japanese Patent Application Laid-Open No. 60-196956 may be used.

The radiation-curable pressure-sensitive adhesive is an intrinsic radiation-curable agent containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the polymer side chain or at the end of the polymer main chain in the polymer main chain. Mold adhesives can also be mentioned. When such an intrinsically curable pressure-sensitive adhesive is used, it tends to be possible to suppress unintended changes in adhesive properties over time due to the movement of low molecular weight components in the formed pressure-sensitive adhesive layer 12. ..

As the base polymer contained in the internal radiation curable pressure-sensitive adhesive, an acrylic polymer is preferable. As the acrylic polymer that can be contained in the intrinsic radiation-curable pressure-sensitive adhesive, the acrylic polymer described as the acrylic polymer contained in the additive-type radiation-curable pressure-sensitive adhesive can be adopted. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer component having a first functional group is polymerized (copolymerized) to obtain an acrylic polymer. Later, a compound having a second functional group capable of reacting with the first functional group and a radiopolymerizable carbon-carbon double bond is added to an acrylic polymer while maintaining the radiopolymerizability of the carbon-carbon double bond. Examples thereof include a method of subjecting to a condensation reaction or an addition reaction.

Examples of the combination of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, and a hydroxy group and an isocyanate group. Examples thereof include an isocyanate group and a hydroxy group. Among these, a combination of a hydroxy group and an isocyanate group and a combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of easiness of reaction tracking. Above all, it is technically difficult to prepare a polymer having a highly reactive isocyanate group, and on the other hand, from the viewpoint of easy preparation and availability of an acrylic polymer having a hydroxy group, the above-mentioned first functional group is used. A combination in which the hydroxy group is used and the second functional group is an isocyanate group is preferable. Examples of the compound having an isocyanate group and a radiation-polymerizable carbon-carbon double bond in this case include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate and the like. .. The acrylic polymer having a hydroxy group includes the above-mentioned hydroxy group-containing monomer and a monomer unit derived from an ether compound such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glucol monovinyl ether. Can be mentioned.

The radiation-curable pressure-sensitive adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketor compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, and thioxanthone compounds. Examples thereof include camphorquinone, halogenated ketone, acylphosphinoxide, and acylphosphonate. Examples of the α-ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, and 2-methyl-2-hydroxy. Examples thereof include propiophenone and 1-hydroxycyclohexylphenyl ketone. Examples of the acetophenone compound include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio) -phenyl] -2. -Molholinopropane-1 and the like can be mentioned. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether and the like. Examples of the ketal-based compound include benzyldimethyl ketal and the like. Examples of the aromatic sulfonyl chloride compound include 2-naphthalene sulfonyl chloride and the like. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone compound include benzophenone, benzoylbenzoic acid, 3,3'-dimethyl-4-methoxybenzophenone and the like. Examples of the thioxanthone-based compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl. Examples thereof include thioxanthone. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer.

The heat-foaming pressure-sensitive adhesive is a pressure-sensitive adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands when heated. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium boron hydride, azides and the like. Examples of the organic foaming agent include salt fluoride alkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarboxylicamide and barium azodicarboxylate; paratoluene. Hydrazide compounds such as sulfonyl hydrazide, diphenyl sulfon-3,3'-disulfonyl hydrazide, 4,4'-oxybis (benzenesulfonyl hydrazide), allylbis (sulfonylhydrazide); p-toluylene sulfonyl semicarbazide, 4,4'- Semi-carbazide compounds such as oxybis (benzenesulfonyl semicarbazide); triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole; N, N'-dinitrosopentamethylenetetramine, N, N'-dimethyl- Examples thereof include N-nitroso compounds such as N, N'-dinitrosoterephthalamide. Examples of the heat-expandable microspheres include microspheres having a structure in which a substance that easily gasifies and expands by heating is enclosed in a shell. Examples of the substance that easily gasifies and expands by the above heating include isobutane, propane, and pentane. A heat-expandable microsphere can be produced by encapsulating a substance that easily gasifies and expands by heating in a shell-forming substance by a core selvation method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal meltability or a substance that can explode due to the action of thermal expansion of the encapsulating substance can be used. Examples of such substances include vinylidene chloride / acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethylmethacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone and the like.

Examples of the non-reducing adhesive force type adhesive include a pressure-sensitive pressure-sensitive adhesive and a pressure-sensitive pressure-sensitive adhesive, which are obtained by pre-curing the above-mentioned radiation-curable pressure-sensitive adhesive by irradiation with radiation. As the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12, one kind of non-reducing adhesive strength type adhesive may be used, or two or more kinds of non-reducing pressure-sensitive adhesive strength may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed of a non-reducing adhesive strength type adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a non-reducing adhesive strength type pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a non-reducing pressure-sensitive adhesive, or a predetermined portion (for example, wafer ring) in the pressure-sensitive adhesive layer 12. The region to be adhered to, which is the region outside the central region) is formed of the non-adhesive strength non-reducing adhesive, and other portions (for example, the central region to which the semiconductor wafer is to be adhered) have adhesive strength. It may be formed from a reduced pressure-sensitive adhesive. Further, when the pressure-sensitive adhesive layer 12 has a laminated structure, all the pressure-sensitive adhesive layers in the laminated structure may be formed of a non-reducing adhesive strength type adhesive, and some of the pressure-sensitive adhesive layers in the laminated structure may have adhesive strength. It may be formed from a non-reducing adhesive.

Adhesives in the form of a radiation-curable adhesive that has been cured by irradiation in advance (irradiated radiation-curable adhesive), even if the adhesive strength is reduced by irradiation, are due to the polymer components contained in the adhesive. It is possible to exhibit the properties and exert the minimum required adhesive force on the adhesive layer of the dicing tape in the diving process and the like. When a radiation-irradiated radiation-curable pressure-sensitive adhesive is used, the entire pressure-sensitive adhesive layer 12 may be formed of the radiation-irradiated radiation-curable pressure-sensitive adhesive in the surface spreading direction of the pressure-sensitive adhesive layer 12. A part may be formed from the irradiated radiation-curable pressure-sensitive adhesive and the other part may be formed from the radiation-unirradiated radiation-curable pressure-sensitive adhesive.

As the pressure-sensitive pressure-sensitive adhesive, a known or conventional pressure-sensitive pressure-sensitive adhesive can be used, and an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive using an acrylic polymer as a base polymer can be preferably used. When the pressure-sensitive adhesive layer 12 contains an acrylic polymer as a pressure-sensitive pressure-sensitive adhesive, the acrylic polymer is a polymer containing a monomer unit derived from (meth) acrylic acid ester as the main monomer unit having the largest mass ratio. Is preferable. As the acrylic polymer, for example, the acrylic polymer described as the acrylic polymer contained in the above-mentioned additive-type radiation-curable pressure-sensitive adhesive can be adopted.

The pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive layer 12 is a known or commonly used pressure-sensitive adhesive such as a cross-linking accelerator, a pressure-sensitive adhesive, an antiaging agent, and a colorant (pigment, dye, etc.) in addition to the above-mentioned components. Additives used in the agent layer may be blended. Examples of the colorant include compounds that are colored by irradiation. When a compound to be colored by irradiation is contained, only the irradiated portion can be colored. The compound to be colored by the above irradiation is a compound which is colorless or light-colored before the irradiation, but becomes colored by the irradiation, and examples thereof include leuco dyes and the like. The amount of the compound to be colored by the above irradiation is not particularly limited and can be appropriately selected.

The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and more preferably 2 to 30 μm, from the viewpoint of preventing chipping of the cut surface of the semiconductor chip and achieving both fixing and holding of the die bond film. It is preferably 5 to 25 μm.

The dicing tape 1, which is an embodiment of the dicing tape of the present invention, is manufactured, for example, as follows. First, the base material 11 can be obtained by forming a film by a known or conventional film forming method. Examples of the film-forming method include a calendar film-forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry laminating method.

Next, a composition (adhesive composition) for forming a pressure-sensitive adhesive layer, which contains a pressure-sensitive adhesive and a solvent for forming the pressure-sensitive adhesive layer 12, is applied onto the base material 11 to form a coating film, which is necessary. The pressure-sensitive adhesive layer 12 can be formed by solidifying the coating film by removing the solvent, curing, or the like. Examples of the coating method include known or conventional coating methods such as roll coating, screen coating, and gravure coating. The solvent removal condition is, for example, in the range of a temperature of 80 to 150 ° C. and a time of 0.5 to 5 minutes. Further, the pressure-sensitive adhesive composition may be applied onto the separator to form a coating film, and then the coating film may be solidified under the above-mentioned desolvent conditions to form the pressure-sensitive adhesive layer 12. Then, the pressure-sensitive adhesive layer 12 is bonded onto the base material 11 together with the separator.

When the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive layer (radiation-curable pressure-sensitive adhesive layer) formed by the above-mentioned radiation-curable pressure-sensitive adhesive, after laminating the die bond film 2 described later, radiation such as ultraviolet rays is applied to the pressure-sensitive adhesive layer 12. You may irradiate. In this way, by irradiating the pressure-sensitive adhesive layer 12, a portion formed by a non-adhesive strength non-reducing type pressure-sensitive adhesive (a pressure-sensitive adhesive obtained by previously curing a radiation-curable pressure-sensitive adhesive by irradiation) can be provided on the pressure-sensitive adhesive layer 12. ..

[Dicing die bond film]
By laminating a dicing film on the pressure-sensitive adhesive layer of the dicing tape of the present invention, the dicing die-bond film having the dicing tape of the present invention and the dicing film laminated on the pressure-sensitive adhesive layer of the dicing tape of the present invention ("" The dicing die bond film of the present invention may be referred to as "the dicing die bond film"). The dicing film in the dicing die bond film of the present invention can be split by applying tensile stress, and it is preferable that the dicing die bond film is split and used by applying tensile stress.

An embodiment of the dicing die bond film of the present invention will be described below. FIG. 2 is a schematic cross-sectional view showing an embodiment of the dicing die bond film of the present invention.

As shown in FIG. 2, the dicing die bond film 3 includes a dicing tape 1 and a die bond film 2 laminated on the pressure-sensitive adhesive layer 12 in the dicing tape 1. The pressure-sensitive adhesive layer 12 shown in FIG. 2 is a radiation-curable pressure-sensitive adhesive layer. The portion 12a corresponding to the semiconductor wafer affixed portion of the adhesive layer 12 is a region formed by the adhesive strength non-reducing adhesive (a region where the degree of cross-linking is increased by irradiation and the adhesive strength is decreased). There is a difference in adhesive strength from the other portion 12b. As a result, the semiconductor wafer before dicing can be sufficiently adhered and fixed via the die bond film 2 by the portion 12b, and the adhesion force of the portion 12a is reduced. Therefore, after the die bond film is cut, the semiconductor chip with the dicing film is attached. Can be easily picked up.

In the pressure-sensitive adhesive layer 12, the portion 12b is a region formed by a pressure-reducing pressure-sensitive adhesive, and is in close contact with the die-bond film 2 to secure a holding force during dicing. As described above, the radiation-curable pressure-sensitive adhesive layer can support the die-bond film 2 for die-bonding the semiconductor chip to an adherend such as a substrate so that both adhesion and peeling can be performed in a well-balanced manner. In the pressure-sensitive adhesive layer 12 of the dicing die bond film 3 shown in FIG. 2, the wafer ring can be fixed to the portion 12b. As shown in FIG. 2, the portion 12a may be provided in an area slightly smaller than that of the die-bonded film 2, or may be provided in all the regions in close contact with the die-bonded film 2.

In the present embodiment, the case where the dicing tape 1 has the portion 12b not covered by the dicing film 2 will be described, but the dicing die bond film of the present invention is not limited to this example, and the dicing tape is not limited to this example. A dicing film may be laminated on the dicing tape so as to cover the whole. Further, the pressure-sensitive adhesive layer 12 in the dicing die-bond film 3 is provided with the irradiated portion 12a and the non-irradiated portion 12b, but the dicing die-bond film of the present invention is limited to this example. However, the pressure-sensitive adhesive layer may not be irradiated, or the entire area of the pressure-sensitive adhesive layer may be irradiated. When the pressure-sensitive adhesive layer 12 is irradiated, the irradiation may be performed before laminating the die bond film 2 or after laminating. When the adhesive layer 12 is irradiated in the dicing die bond film 3, it is not necessary to perform irradiation when picking up the semiconductor chip with the die bond film after dicing the semiconductor wafer, and the step of irradiating the semiconductor chip during manufacturing is reduced. can do.

(Die bond film)
The die bond film 2 has a structure that can function as a thermosetting adhesive for die bonding. In the present embodiment, the die bond film 2 and the adhesive constituting the die bond film 2 may contain a thermosetting resin and, for example, a thermoplastic resin as a binder component, and may react with the curing agent to form a bond. It may contain a thermoplastic resin having a thermosetting functional group to be obtained. When the adhesive constituting the die bond film 2 contains a thermoplastic resin having a thermosetting functional group, the adhesive does not need to contain a thermosetting resin (epoxy resin or the like). The die bond film 2 may have a single-layer structure or a multilayer structure.

When the die bond film 2 contains a thermosetting resin together with a thermoplastic resin, the thermosetting resin includes, for example, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting resin. Examples include polyimide resin. As the thermosetting resin, only one kind may be used, or two or more kinds may be used. Epoxy resin is preferable as the thermosetting resin because the content of ionic impurities and the like that can cause corrosion of the semiconductor chip to be die-bonded tends to be small. Further, as the curing agent for the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type and ortho. Examples thereof include cresol novolak type, trishydroxyphenylmethane type, tetraphenylol ethane type, hydantin type, trisglycidyl isocyanurate type, glycidylamine type epoxy resin and the like. Of these, a novolak type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type epoxy resin, and a tetraphenylol ethane type epoxy resin are preferable because they are highly reactive with a phenol resin as a curing agent and have excellent heat resistance.

Examples of the phenol resin that can act as a curing agent for the epoxy resin include novolak-type phenol resin, resol-type phenol resin, and polyoxystyrene such as polyparaoxystyrene. Examples of the novolak type phenol resin include phenol novolac resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, nonylphenol novolak resin and the like. As the above-mentioned phenol resin, only one kind may be used, or two or more kinds may be used. Among them, phenol novolac resin and phenol aralkyl resin are preferable from the viewpoint that when they are used as a curing agent for an epoxy resin as an adhesive for die bonding, the connection reliability of the adhesive tends to be improved.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the die bond film 2, the phenol resin preferably has a hydroxyl group in the phenol resin per equivalent amount of epoxy groups in the epoxy resin component. It is contained in an amount of 5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

When the die bond film 2 contains a thermosetting resin, the content ratio of the thermosetting resin is the total mass of the die bond film 2 from the viewpoint of appropriately exhibiting the function as a thermosetting adhesive in the die bond film 2. On the other hand, it is preferably 5 to 60% by mass, more preferably 10 to 50% by mass.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, and polycarbonate resin. , Thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin and the like. As the thermoplastic resin, only one kind may be used, or two or more kinds may be used. As the thermoplastic resin, an acrylic resin is preferable because it has few ionic impurities and high heat resistance, so that it is easy to secure the bonding reliability by the die bond film 2.

The acrylic resin is preferably a polymer containing a monomer unit derived from (meth) acrylic acid ester as the main monomer unit having the largest mass ratio. Examples of the (meth) acrylic acid ester include (meth) acrylic acid esters exemplified as (meth) acrylic acid esters forming an acrylic polymer that can be contained in the above-mentioned additive-type radiation-curable pressure-sensitive adhesive. Be done. The acrylic resin may contain a monomer unit derived from another monomer component copolymerizable with the (meth) acrylic acid ester. Examples of the other monomer components include functional groups such as a carboxy group-containing monomer, an acid anhydride monomer, a hydroxy group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide, and acrylonitrile. Examples thereof include monomers and various polyfunctional monomers, and specific examples thereof include other monomer components constituting the acrylic polymer that can be contained in the above-mentioned radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12. Can be used. From the viewpoint of achieving high cohesive force in the die bond film 2, the acrylic resin is preferably a (meth) acrylic acid ester (particularly, a (meth) acrylic acid alkyl ester having an alkyl group having 4 or less carbon atoms). , A copolymer of a carboxy group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (particularly a polyglycidyl-based polyfunctional monomer), more preferably ethyl acrylate, butyl acrylate, and acrylic acid. It is a copolymer of acrylic nitrile and polyglycidyl (meth) acrylate.

When the die bond film 2 contains a thermoplastic resin having a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin in this thermosetting functional group-containing acrylic resin preferably contains a monomer unit derived from (meth) acrylic acid ester as the main monomer unit having the largest mass ratio. Examples of the (meth) acrylic acid ester include (meth) acrylic acid esters exemplified as (meth) acrylic acid esters forming an acrylic polymer that can be contained in the above-mentioned additive-type radiation-curable pressure-sensitive adhesive. Be done. On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Of these, a glycidyl group and a carboxy group are preferable. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin and a carboxy group-containing acrylic resin are particularly preferable. Further, it is preferable to contain a curing agent together with the thermosetting functional group-containing acrylic resin, and the curing agent is exemplified as, for example, a cross-linking agent that can be contained in the above-mentioned radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12. Can be mentioned. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol-based compound as a curing agent, and for example, the above-mentioned various phenol resins can be used.

In order to achieve a certain degree of cross-linking of the die bond film 2 before being cured for die bonding, for example, it reacts with the functional groups at the molecular chain ends of the above-mentioned resin that can be contained in the die bond film 2. It is preferable to add a polyfunctional compound that can be bonded to the resin composition for forming a die bond film as a cross-linking component. Such a configuration is preferable from the viewpoint of improving the adhesive properties of the die bond film 2 at high temperatures and from the viewpoint of improving the heat resistance. Examples of the cross-linking component include polyisocyanate compounds. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylenediocyanate, 1,5-naphthalenediocyanate, adducts of polyhydric alcohol and diisocyanate, and the like. The content of the cross-linking component in the resin composition for forming a die-bond film is from the viewpoint of improving the cohesive force of the formed die-bond film 2 with respect to 100 parts by mass of the resin having the above-mentioned functional group that can react and bond with the cross-linking component. Is preferably 0.05 parts by mass or more, and is preferably 7 parts by mass or less from the viewpoint of improving the adhesive strength of the formed die bond film 2. Further, as the cross-linking component, another polyfunctional compound such as an epoxy resin may be used in combination with the polyisocyanate compound.

The die bond film 2 may contain a filler. By blending the filler with the die bond film 2, the physical properties such as the conductivity, thermal conductivity, and elastic modulus of the die bond film 2 can be adjusted. Examples of the filler include an inorganic filler and an organic filler, and an inorganic filler is particularly preferable. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, and crystals. In addition to quality silica and amorphous silica, simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon black, graphite and the like can be mentioned. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. As the filler, only one kind may be used, or two or more kinds may be used.

The average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. When the average particle size is 0.005 μm or more, the wettability and adhesiveness to an adherend such as a semiconductor wafer are further improved. When the average particle size is 10 μm or less, the effect of the filler added for imparting each of the above characteristics can be made sufficient, and heat resistance can be ensured. The average particle size of the filler can be determined using, for example, a luminous intensity type particle size distribution meter (for example, trade name "LA-910", manufactured by HORIBA, Ltd.).

The die bond film 2 may contain other components, if necessary. Examples of the other components include flame retardants, silane coupling agents, ion trapping agents and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin and the like. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, antimony hydroxide (for example, “IXE? 300” manufactured by Toagosei Co., Ltd.), and zirconium phosphate having a specific structure (for example, Toagosei Co., Ltd.). "IXE? 100"), magnesium silicate (for example, "Kyoward 600" made by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (for example, "Kyoward 700" made by Kyowa Chemical Industry Co., Ltd.), etc. Can be mentioned. A compound capable of forming a complex with a metal ion can also be used as an ion trapping agent. Examples of such a compound include a triazole-based compound, a tetrazole-based compound, and a bipyridyl-based compound. Of these, a triazole-based compound is preferable from the viewpoint of the stability of the complex formed with the metal ion. Examples of such triazole-based compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-. 5-Methylphenyl) Benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-t-butyl-5-methylphenyl) )-5-Chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) benzotriazole, 6- (2) -Benzotriazolyl) -4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1- (2', 3'-hydroxypropyl) benzotriazole, 1- (1,2-Dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t-pentyl-6-{(H-benzotriazole-1-yl) methyl} phenol , 2- (2-Hydroxy-5-t-butylphenyl) -2H-benzotriazole, C7-C9-alkyl-3- [3- (2H-benzotriazole-2-yl) -5- (1,1-) Dimethylethyl) -4-hydroxyphenyl] propion ether, octyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazole-2-yl) phenyl] propionate, 2-ethylhexyl -3- [3-t-Butyl-4-hydroxy-5- (5-chloro-2H-benzotriazole-2-yl) phenyl] propionate, 2- (2H-benzotriazole-2-yl) -6- ( 1-Methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazole-2-yl) -4-t-butylphenol, 2- (2) -Hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) -benzotriazole, 2- (3-t-butyl-2-hydroxy-5-methylphenyl) -5 Chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chloro- Benzotriazole, 2- [2-hydroxy-3,5-di (1,1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazole-2-yl) -4- (1,1,3,3-tetramethylbutyl) phenol], 2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H-benzotriazole, methyl-3 ? [3- (2H-benzotriazole-2-yl) -5-t-butyl-4-hydroxyphenyl] propionate and the like can be mentioned. Further, a predetermined hydroxyl group-containing compound such as a quinol compound, a hydroxyanthraquinone compound, and a polyphenol compound can also be used as an ion trapping agent. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthralphin, tannin, gallate, methyl gallate, and pyrogallol. As the above-mentioned other additives, only one kind may be used, or two or more kinds may be used.

The thickness of the die bond film 2 (in the case of a laminated body, the total thickness) is not particularly limited, but is, for example, 1 to 200 μm. The upper limit is preferably 100 μm, more preferably 80 μm. The lower limit is preferably 3 μm, more preferably 5 μm.

The glass transition temperature (Tg) of the die bond film 2 is preferably 0 ° C. or higher, more preferably 10 ° C. or higher. When the glass transition temperature is 0 ° C. or higher, the die bond film 2 can be easily cut by the cool expand. The upper limit of the glass transition temperature of the die bond film 2 is, for example, 100 ° C.

The die bond film 2 is not particularly limited, but has a tensile storage elastic modulus (23 ° C.) of preferably 5 to 3000 MPa, more preferably 10 to 1000 MPa. When the tensile storage elastic modulus is 5 MPa or more, the semiconductor chip with the die bond film 2 can be picked up more easily at the time of picking up. When the tensile storage elastic modulus is 3000 MPa or less, it is possible to make it more difficult for the dicing film 2 to float from the dicing tape 1 between the time of cooling expansion and the time of picking up.

The die bond film 2 is not particularly limited, but has a tensile storage elastic modulus (−15 ° C.) of preferably 1 to 10 GPa, more preferably 2 to 5 GPa. When the tensile storage elastic modulus is 1 GPa or more, the die bond film 2 can be more easily cut by the cool expand. When the tensile storage elastic modulus is 10 GPa or less, it is possible to make it more difficult for the dicing film 2 to float from the dicing tape 1 during cool expansion.

Ratio of the tensile storage elastic modulus (23 ° C.) and the tensile storage elastic modulus (-15 ° C.) of the die bond film 2 [(tensile storage elastic modulus (-15 ° C.)) / (tensile storage elastic modulus (23 ° C.))] Is not particularly limited, but is preferably 2 or more, and more preferably 30 or more. When the above ratio is 2 or more, the die bond film 2 can be more suppressed from floating from the dicing tape 1 at the time of cool expansion, and the semiconductor chip with the die bond film 2 can be more easily peeled off from the dicing tape 1 at the time of picking up. It will be possible. The larger the ratio, the better, but from the viewpoint of the balance between pickup and ease of splitting, the ratio is, for example, 300 or less.

The tensile storage elastic modulus (23 ° C.) and the tensile storage elastic modulus (-15 ° C.) of the die bond film 2 are the same as those of the pressure-sensitive adhesive layer 12 except that the die bond film is used instead of the pressure-sensitive adhesive layer, for example. It can be measured in the same manner as the tensile storage elastic modulus (23 ° C.) and the tensile storage elastic modulus (-15 ° C.).

As shown in FIG. 2, the die bond film 2 includes a single-layer die bond film. In addition, in this specification, a single layer means a layer having the same composition, and includes the form in which a plurality of layers having the same composition are laminated. However, the die bond film in the dicing die bond film of the present invention is not limited to this example, and may have, for example, a multilayer structure in which two or more kinds of adhesive films having different compositions are laminated.

The dicing die bond film 3 is not particularly limited, but the peeling force between the pressure-sensitive adhesive layer 12 and the die bond film 2 at 0 ° C. is preferably 0.15 to 5 N / 100 mm, more preferably 0.20 to 0.20 to. It is 1N / 100 mm. When the peeling force is 0.15 N / 100 mm or more, peeling at the interface between the die bond film 2 and the pressure-sensitive adhesive layer 12 at the time of cool expansion is less likely to occur, and as a result, splitting defects and split semiconductor elements are scattered. It is possible to further suppress the occurrence of the trouble of doing so. When the peeling force is 5 N / 100 mm or less, it is possible to further suppress the occurrence of cutting defects due to the peeling force being too high. When the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer, the peeling force (for example, the pressure-sensitive adhesive layer 12 in the portion 12a) after irradiation (that is, a region formed by the non-reducing pressure-sensitive adhesive) is applied. The peeling force between the and the die bond film 2 at 0 ° C.) is preferably within the above range.

The dicing die bond film 3 is not particularly limited, but the peeling force between the pressure-sensitive adhesive layer 12 and the die bond film 2 at 23 ° C. is preferably 0.05 to 2.5 N / 100 mm, more preferably 0. It is 10 to 1N / 100 mm. When the peeling force is 0.05 N / 100 mm or more, it is possible to make it more difficult for the semiconductor chip with the die bond film to float during transportation. When the peeling force is 2.5 N / 100 mm or less, the thinned semiconductor chips in recent years are easily broken. Therefore, even such a semiconductor wafer exhibits good light peeling property and can be easily picked up. can do. When the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer, the peeling force (for example, the pressure-sensitive adhesive layer 12 in the portion 12a) after irradiation (that is, a region formed by the non-reducing pressure-sensitive adhesive) is applied. The peeling force between the and the die bond film 2 at 23 ° C.) is preferably within the above range.

The dicing die bond film 3 according to the embodiment of the dicing die bond film of the present invention is manufactured, for example, as follows. First, a composition (adhesive composition) for forming the die bond film 2 containing a resin, a cross-linking agent, a filler, a solvent and the like is prepared.

Next, the adhesive composition is applied onto the separator to form a coating film, and then the coating film is solidified by desolvation, curing, or the like, if necessary, to form the die bond film 2. The coating method is not particularly limited, and examples thereof include known or conventional coating methods such as roll coating, screen coating, and gravure coating. The solvent removal condition is, for example, within the range of a temperature of 70 to 160 ° C. and a time of 1 to 5 minutes.

Subsequently, the separators are peeled off from the dicing tape 1 and the die bond film 2, respectively, and the dicing film 2 and the pressure-sensitive adhesive layer 12 are bonded together so as to be a bonding surface. The bonding can be performed by, for example, crimping. At this time, the laminating temperature is not particularly limited, and is, for example, preferably 30 to 50 ° C, more preferably 35 to 45 ° C. The linear pressure is not particularly limited, and is preferably 0.1 to 20 kgf / cm, more preferably 1 to 10 kgf / cm, for example.

As described above, when the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer 12 is irradiated with radiation such as ultraviolet rays after the bonding of the die bond film 2, for example, the pressure-sensitive adhesive layer 12 is adhered from the side of the base material 11. The agent layer 12 is irradiated with radiation, and the irradiation amount thereof is, for example, 50 to 500 mJ, preferably 100 to 300 mJ.

Irradiation is usually performed on the portion of the pressure-sensitive adhesive layer 12 corresponding to the portion 12a. When the portion 12a is formed by partially irradiating the portion, it can be performed through a photomask having a pattern corresponding to the portion 12b. Further, there is also a method of irradiating the portion 12a with radiation in a spot manner to form the portion 12a.

As described above, for example, the dicing die bond film 3 shown in FIG. 2 can be produced. The dicing die bond film 3 may be provided with a separator (not shown) on the side of the die bond film 2 so as to cover at least the die bond film 2. When the die bond film 2 is smaller in size than the pressure-sensitive adhesive layer 12 of the dicing tape 1 and there is a region in the pressure-sensitive adhesive layer 12 where the die-bond film 2 is not bonded, for example, the separator may be a die-bond film 2 and the pressure-sensitive adhesive layer 12. At least, it may be provided in a form of covering. The separator is an element for protecting at least the die bond film 2 (for example, the die bond film 2 and the pressure-sensitive adhesive layer 12) from being exposed, and is peeled off from the dicing die bond film 3 when it is used. Examples of the separator include polyethylene terephthalate (PET) films, polyethylene films, polypropylene films, plastic films and papers surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent. ..

[Manufacturing method of semiconductor devices]
A semiconductor device can be manufactured using the dicing die bond film of the present invention. Specifically, a step of attaching a fragment of a semiconductor wafer including a plurality of semiconductor chips or a semiconductor wafer that can be fragmented to a plurality of semiconductor chips on the dicing die bond film side of the dicing die bond film of the present invention (“step”). A ”), and under relatively low temperature conditions, the dicing tape of the present invention in the dicing die bond film of the present invention is expanded, and at least the dicing film is cut to obtain a semiconductor chip with a die bond film. The step of obtaining (sometimes referred to as "step B") and the step of expanding the dicing tape under relatively high temperature conditions to widen the distance between the semiconductor chips with the die bond film ("step C"). The semiconductor device can be manufactured by a manufacturing method including the step of picking up the semiconductor chip with a dicing film (may be referred to as "step D"). The method for manufacturing a semiconductor device including the above steps A to D may be referred to as "the manufacturing method of the present invention".

(Step A)
In the step A, a fragment of a semiconductor wafer including a plurality of semiconductor chips or a semiconductor wafer that can be individualized is attached to the plurality of semiconductor chips on the die bond film 2 side of the dicing die bond film 3. In the semiconductor wafer segment containing the plurality of semiconductor chips used in the step A, for example, a groove is formed on the surface of the semiconductor wafer (circuit layer forming surface or circuit layer non-forming surface thereof), and then until the groove appears on the back surface. It can be obtained by performing backside grinding (back grind).

A semiconductor wafer fragment including the plurality of semiconductor chips used in one embodiment in step A, or a semiconductor wafer that can be fragmented into a plurality of semiconductor chips can be obtained as follows. First, as shown in FIGS. 3A and 3B, a dividing groove 30a is formed in the semiconductor wafer W (divided groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. Then, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held by the wafer processing tape T1 and the first semiconductor wafer W is held. A dividing groove 30a having a predetermined depth is formed on the surface Wa side by using a rotating blade such as a dicing device. The dividing groove 30a is a gap for separating the semiconductor wafer W into semiconductor chip units (in FIGS. 3 to 5, the dividing groove 30a is schematically represented by a thick line).

Next, as shown in FIG. 3C, the wafer processing tape T2 having the adhesive surface T2a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 from the semiconductor wafer W is attached. And peel off.

Next, as shown in FIG. 3D, with the semiconductor wafer W held by the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. (Wafer thinning process). The grinding process can be performed using a grinding device equipped with a grinding wheel. By this wafer thinning step, in the present embodiment, a semiconductor wafer 30A that can be fragmented is formed on a plurality of semiconductor chips 31. Specifically, the semiconductor wafer 30A has a portion (connecting portion) for connecting a portion of the wafer to be fragmented into a plurality of semiconductor chips 31 on the second surface Wb side. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 μm, preferably 3 to 20 μm. Is.

Next, as shown in FIG. 4A, the semiconductor wafer 30A held on the wafer processing tape T2 is bonded to the dicing die bond film 2 of the dicing die bond film 3. After that, as shown in FIG. 4B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die-bond film 3 is a radiation-curable pressure-sensitive adhesive layer, the semiconductor wafer 30A is bonded to the die-bond film 2 instead of the above-mentioned radiation irradiation in the manufacturing process of the dicing die-bond film 3. After that, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the side of the base material 11. The irradiation amount is, for example, 50 to 500 mJ, preferably 100 to 300 mJ. In the dicing die bond film 3, the region where the pressure-sensitive adhesive layer 12 is irradiated as an adhesive force reducing measure (portion 12a shown in FIG. 1) is, for example, the peripheral portion of the pressure-sensitive adhesive layer 12 in the die-bond film 2 bonding region. This is the area to be excluded.

(Step B)
In step B, the dicing tape 1 in the dicing die bond film 3 is expanded under relatively low temperature conditions, and at least the dicing film 2 is cut to obtain a semiconductor chip with a dicing film.

In one embodiment of the step B, first, the ring frame 41 is attached on the adhesive layer 12 of the dicing tape 1 in the dicing die bond film 3, and then, as shown in FIG. 5A, the semiconductor wafer 30A is attached. The dicing die bond film 3 is fixed to the holder 42 of the expanding device.

Next, the first expanding step (cool expanding step) under relatively low temperature conditions is performed as shown in FIG. 5 (b) to separate the semiconductor wafer 30A into a plurality of semiconductor chips 31. The dicing film 2 of the dicing die bond film 3 is cut into small pieces of the die bond film 21 to obtain a semiconductor chip 31 with the die bond film. In the cool expanding step, the hollow cylindrical push-up member 43 provided in the expanding device is brought into contact with the dicing tape 1 at the lower side in the drawing of the dicing die bond film 3 and raised, and the dicing die bond film 3 bonded to the semiconductor wafer 30A is raised. The dicing tape 1 of the above is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed under the condition that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the dicing tape 1. The temperature condition in the cool expanding step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed for raising the push-up member 43) in the cool expanding step is preferably 0.1 to 100 mm / sec. The amount of expansion in the cool expanding step is preferably 3 to 16 mm.

In step B, when a semiconductor wafer 30A that can be fragmented is used for a plurality of semiconductor chips, the thin-walled and fragile portions of the semiconductor wafer 30A are split, resulting in fragmentation into the semiconductor chip 31. At the same time, in step B, in the die bond film 2 which is in close contact with the pressure-sensitive adhesive layer 12 of the expanded dicing tape 1, deformation is suppressed in each region where each semiconductor chip 31 is in close contact, while the semiconductor chip 31 is suppressed. The tensile stress generated in the dicing tape 1 acts on the portion of the dividing groove between the dicing grooves located in the vertical direction in the figure without such a deformation suppressing action. As a result, the portion of the die bond film 2 located in the vertical direction of the dividing groove between the semiconductor chips 31 is cut. After the split by expanding, as shown in FIG. 5C, the push-up member 43 is lowered to release the expanded state of the dicing tape 1.

(Process C)
In step C, the dicing tape 1 is expanded under relatively high temperature conditions to widen the distance between the semiconductor chips with the die bond film.

In one embodiment in step C, first, a second expanding step (normal temperature expanding step) under relatively high temperature conditions is performed as shown in FIG. 6A, and the distance between the semiconductor chips 31 with a die bond film 31 is performed. Increase (separation distance). In step C, the hollow cylindrical push-up member 43 provided in the expanding device is raised again, and the dicing tape 1 of the dicing die bond film 3 is expanded. The temperature condition in the second expanding step is, for example, 10 ° C. or higher, preferably 15 to 30 ° C. The expanding speed (speed for raising the push-up member 43) in the second expanding step is, for example, 0.1 to 10 mm / sec, preferably 0.3 to 1 mm / sec. The amount of expansion in the second expanding step is, for example, 3 to 16 mm. In step C, the separation distance of the semiconductor chip 31 with a die bond film is widened to such an extent that the semiconductor chip 31 with a die bond film can be appropriately picked up from the dicing tape 1 in the pickup step described later. After widening the separation distance by expanding, as shown in FIG. 6B, the push-up member 43 is lowered to release the expanded state of the dicing tape 1. From the viewpoint of suppressing the separation distance of the semiconductor chip 31 with the die bond film on the dicing tape 1 from being narrowed after the expanded state is released, the portion outside the semiconductor chip 31 holding region of the dicing tape 1 is formed before the expanded state is released. It is preferable to heat and shrink.

After the step C, a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 1 with the semiconductor chip 31 with a die bond film using a cleaning liquid such as water may be provided, if necessary.

(Step D)
In step D (pickup step), a semiconductor chip with a die-bonded film is picked up. In one embodiment of the step D, after the cleaning step is performed as necessary, the semiconductor chip 31 with the die bond film is picked up from the dicing tape 1 as shown in FIG. 7. For example, with respect to the semiconductor chip 31 with a dicing film to be picked up, the pin member 44 of the pick-up mechanism is raised on the lower side in the drawing of the dicing tape 1, pushed up through the dicing tape 1, and then sucked and held by the suction jig 45. .. In the pick-up step, the push-up speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 44 is, for example, 100 to 500 μm.

The method for manufacturing a semiconductor device may include steps other than steps A to D. For example, in one embodiment, as shown in FIG. 8A, the picked up semiconductor chip 31 with a die bond film is temporarily fixed to the adherend 51 via the die bond film 21 (temporary fixing step). Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, a separately manufactured semiconductor chip, and the like. The shearing adhesive force at 25 ° C. at the time of temporary fixing of the die bond film 21 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 51. The configuration in which the shearing adhesive force of the die bond film 21 is 0.2 MPa or more is such that in the wire bonding step described later, the die bond film 21 is displaced by ultrasonic vibration or heating on the adhesive surface between the semiconductor chip 31 or the adherend 51. It is possible to suppress the occurrence of deformation and perform wire bonding appropriately. The shearing adhesive force at 175 ° C. at the time of temporary fixing of the die bond film 21 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa with respect to the adherend 51.

Next, as shown in FIG. 8B, the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the adherend 51 are electrically connected via the bonding wire 52 (not shown). Wire bonding process). The connection between the electrode pad of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 can be realized by ultrasonic welding accompanied by heating, and the die bond film 21 is not thermally cured. As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The wire heating temperature in wire bonding is, for example, 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is from several seconds to several minutes.

Next, as shown in FIG. 8C, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 on the adherend 51 and the bonding wire 52 (sealing step). In the sealing step, the thermosetting of the die bond film 21 proceeds. In the sealing step, for example, the sealing resin 53 is formed by a transfer molding technique performed using a mold. As the constituent material of the sealing resin 53, for example, an epoxy resin can be used. In the sealing step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. If the sealing resin 53 is not sufficiently cured in the sealing step, a post-curing step for completely curing the sealing resin 53 is performed after the sealing step. Even if the die bond film 21 is not completely heat-cured in the sealing step, the die bond film 21 can be completely heat-cured together with the sealing resin 53 in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C., and the heating time is, for example, 0.5 to 8 hours.

In the above embodiment, as described above, after the semiconductor chip 31 with the die bond film is temporarily fixed to the adherend 51, the wire bonding step is performed without completely thermosetting the die bond film 21. Instead of such a configuration, in the above-mentioned method for manufacturing a semiconductor device, a semiconductor chip 31 with a die-bonded film may be temporarily fixed to an adherend 51, and then the die-bonded film 21 may be thermally cured and then a wire bonding step may be performed. good.

In the method for manufacturing the semiconductor device, as another embodiment, the wafer thinning step shown in FIG. 9 may be performed instead of the wafer thinning step described above with reference to FIG. 3D. After going through the above-mentioned process with reference to FIG. 3 (c), in the wafer thinning step shown in FIG. 9, the wafer is brought to a predetermined thickness while the semiconductor wafer W is held by the wafer processing tape T2. The semiconductor wafer divider 30B including the plurality of semiconductor chips 31 and held on the wafer processing tape T2 is formed by thinning the wafer by grinding from the second surface Wb. In the wafer thinning step, a method of grinding the wafer until the dividing groove 30a is exposed on the second surface Wb side (first method) may be adopted, or the dividing groove 30a is reached from the second surface Wb side. A method of grinding the wafer to the front and then forming a semiconductor wafer split body 30B by causing a crack between the split groove 30a and the second surface Wb by the action of the pressing force from the rotary grindstone to the wafer (second). Method) may be adopted. Depending on the method adopted, the depth of the dividing groove 30a formed as described above with reference to FIGS. 3 (a) and 3 (b) from the first surface Wa is appropriately determined. In FIG. 9, the dividing groove 30a that has undergone the first method, the dividing groove 30a that has undergone the second method, and the cracks connected thereto are schematically represented by thick lines. In the method for manufacturing a semiconductor device, in step A, the semiconductor wafer divider 30B thus manufactured as the semiconductor wafer divider is used in place of the semiconductor wafer 30A, and each of the above-described semiconductor wafers is referred to with reference to FIGS. 4 to 8. The process may be performed.

10 (a) and 10 (b) show the step B in the embodiment, that is, the first expanding step (cool expanding step) performed after the semiconductor wafer divided body 30B is bonded to the dicing die bond film 3. In step B of the embodiment, the hollow columnar push-up member 43 provided in the expanding device is brought into contact with the dicing tape 1 at the lower side in the drawing of the dicing die bond film 3 and raised, and the semiconductor wafer divided body 30B is bonded to the dicing die bond film 3. The dicing tape 1 of the dicing die bond film 3 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B. This expansion is performed under the condition that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the dicing tape 1. The temperature condition in the cool expanding step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed for raising the push-up member 43) in the cool expanding step is preferably 1 to 400 mm / sec. The amount of expansion in the cool expanding step is preferably 1 to 300 mm. By such a cool expanding step, the die bond film 2 of the dicing die bond film 3 is cut into small pieces of the die bond film 21 to obtain a semiconductor chip 31 with a die bond film. Specifically, in the cool expanding step, in the die bond film 2 in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 1 to be expanded, deformation occurs in each region in which each semiconductor chip 31 of the semiconductor wafer divider 30B is in close contact. On the other hand, the tensile stress generated in the dicing tape 1 acts on the portion of the dividing groove 30a between the semiconductor chips 31 located in the vertical direction in the drawing without such a deformation suppressing action. As a result, in the die bond film 2, the portion of the dividing groove 30a between the semiconductor chips 31 located in the vertical direction in the drawing is cut.

In the method for manufacturing the semiconductor device, as still another embodiment, the semiconductor wafer 30C manufactured as follows may be used instead of the semiconductor wafer 30A or the semiconductor wafer divided body 30B used in the step A. ..

In the embodiment, as shown in FIGS. 11 (a) and 11 (b), first, the modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. Then, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, the light collecting point inside the wafer while the semiconductor wafer W is held by the wafer processing tape T3. The combined laser beam is applied to the semiconductor wafer W from the side opposite to the wafer processing tape T3 along the planned division line, and the semiconductor wafer W is modified by ablation due to multiphoton absorption. The region 30b is formed. The modified region 30b is a fragile region for separating the semiconductor wafer W into semiconductor chip units. A method for forming a modified region 30b on a planned division line on a semiconductor wafer by laser light irradiation is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370, but the laser light irradiation conditions in the embodiment are described in, for example. It is adjusted appropriately within the range of the following conditions.
<Laser light irradiation conditions>
(A) Laser light
Laser light source Semiconductor laser excitation Nd: YAG laser
Wavelength 1064nm
Laser light spot cross-sectional area 3.14 × 10 ^-8 cm ²
Oscillation form Q-switched pulse
Repeat frequency 100 kHz or less
Pulse width 1 μs or less
Output 1mJ or less
Laser light quality TEM00
Polarization characteristics Linear polarization (B) Condensing lens
Magnification 100 times or less
NA 0.55
Transmittance with respect to laser light wavelength 100% or less (C) Movement speed of the cutting table on which the semiconductor substrate is placed 280 mm / sec or less A method of irradiating laser light L to form a modified region 4L on a planned division line. Is described in detail in Japanese Patent Application Laid-Open No. 2002-192370 and the like, and detailed description thereof will be omitted here.

Next, as shown in FIG. 11C, with the semiconductor wafer W held by the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. A semiconductor wafer 30C that can be fragmented is formed on a plurality of semiconductor chips 31 (wafer thinning step). In the method for manufacturing a semiconductor device, in step A, the semiconductor wafer 30C thus produced as a semiconductor wafer that can be fragmented is used instead of the semiconductor wafer 30A, and is described above with reference to FIGS. 4 to 8. Each step may be performed.

As a specific example, FIGS. 12A and 12B represent a step B in the embodiment, that is, a first expanding step (cool expanding step) performed after the semiconductor wafer 30C is bonded to the dicing die bond film 3. .. In the cool expanding step, the hollow columnar push-up member 43 provided in the expanding device is brought into contact with the dicing tape 1 at the lower side in the drawing of the dicing die bond film 3 and raised, and the dicing die bond film 3 bonded to the semiconductor wafer 30C is raised. The dicing tape 1 of the above is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expansion is performed under the condition that a tensile stress in the range of 5 to 28 MPa, preferably 8 to 25 MPa is generated in the dicing tape 1. The temperature condition in the cool expanding step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed for raising the push-up member 43) in the cool expanding step is preferably 1 to 400 mm / sec. The amount of expansion in the cool expanding step is preferably 1 to 300 mm. By such a cool expanding step, the die bond film 2 of the dicing die bond film 3 is cut into small pieces of the die bond film 21 to obtain a semiconductor chip 31 with a die bond film. Specifically, in the cool expand step, cracks are formed in the fragile modified region 30b in the semiconductor wafer 30C, and individualization into the semiconductor chip 31 occurs. At the same time, in the cool expanding step, in the die bond film 2 that is in close contact with the pressure-sensitive adhesive layer 12 of the expanded dicing tape 1, deformation is suppressed in each region of the semiconductor wafer 30C in which each semiconductor chip 31 is in close contact. On the other hand, the tensile stress generated in the dicing tape 1 acts on the crack-forming portion of the wafer located in the vertical direction in the drawing without such a deformation suppressing effect. As a result, in the die bond film 2, the portion of the die bond film 2 located in the vertical direction in the figure of the crack forming portion between the semiconductor chips 31 is cut.

Further, in the method for manufacturing a semiconductor device, the dicing die bond film 3 can be used for obtaining a semiconductor chip with a die bond film as described above, but when a plurality of semiconductor chips are laminated and mounted three-dimensionally. It can also be used for obtaining a semiconductor chip with a die-bonded film in. A spacer may or may not be interposed between the semiconductor chips 31 in such a three-dimensional mounting together with the die bond film 21.

Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.

Example 1
(Making dicing tape)
In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirrer, 100 parts by mass of 2-ethylhexyl acrylate (2EHA), 19 parts by mass of 2-hydroxyethyl acrylate (HEA), and benzoyl peroxide 0. 4 parts by mass and 80 parts by mass of toluene were added, and polymerization was carried out at 60 ° C. for 10 hours in a nitrogen stream to obtain a solution containing acrylic polymer A.
To this solution containing acrylic polymer A, 1.2 parts by mass of 2-methacryloyloxyethyl isocyanate (MOI) was added, and an addition reaction was carried out at 50 ° C. for 60 hours in an air stream to carry out an addition reaction. Got
Next, with respect to 100 parts by mass of the acrylic polymer A', 1.3 parts by mass of the polyisocyanate compound (trade name "Coronate L", manufactured by Toso Co., Ltd.) and a photopolymerization initiator (trade name "Irgacure 184"). A pressure-sensitive adhesive composition A was prepared by adding 3 parts by mass (manufactured by BASF).
The obtained pressure-sensitive adhesive composition A was applied onto the silicone-treated surface of the PET-based separator and solidified by heating at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer A having a thickness of 10 μm. Next, a polyvinyl chloride film (trade name "V9K", manufactured by Achilles Corporation, thickness 100 μm) was attached to the exposed surface of the pressure-sensitive adhesive layer A and stored at 23 ° C. for 72 hours for dicing. Tape A was produced.

(Making a die bond film)
The following (a) to (e) were dissolved in methyl ethyl ketone to obtain an adhesive composition A having a solid content concentration of 20% by mass.
(A) Acrylic resin (trade name "SG-70L", manufactured by Nagase ChemteX Corporation, glass transition temperature 4 ° C.): 100 parts by mass (solid content)
(B) Epoxy resin (trade name "N-655-EXP-S", manufactured by DIC Corporation): 13 parts by mass (c) Epoxy resin (trade name "JER828", manufactured by Mitsubishi Chemical Corporation): 13 mass Part (d) Phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.): 119 parts by mass (e) Spherical silica (trade name "SO-25R", manufactured by Admatex Corporation): 222 mass Department

The obtained adhesive composition A was applied onto the silicone-treated surface of the PET-based separator and then heat-solidified at 130 ° C. for 2 minutes to prepare a die bond film A having a thickness (average thickness) of 10 μm. ..

(Preparation of dicing die bond film)
The PET-based separator was peeled off from the dicing tape A, and the die bond film A was attached to the exposed pressure-sensitive adhesive layer. A hand roller was used for bonding. Next, 300 mJ of ultraviolet rays were irradiated from the dicing tape side to prepare a dicing die bond film A.

Comparative Example 1
(Making dicing tape)
A dicing tape B was obtained in the same manner as in Example 1 except that an EVA-based film (trade name “NED # 125”, manufactured by Gunze Co., Ltd., thickness 125 μm) was used as a base material.

(Preparation of dicing die bond film)
A dicing die bond film B was produced in the same manner as in Example 1 except that the dicing tape B was used instead of the dicing tape A.

Comparative Example 2
(Making dicing tape)
As the base material, the same as in Example 1 except that a plastic base material having a three-layer structure of polyethylene / polypropylene / polyethylene (trade name “DDZ”, manufactured by Gunze Co., Ltd., thickness 90 μm) was used. Dicing tape C was obtained.

(Preparation of dicing die bond film)
A dicing die bond film C was produced in the same manner as in Example 1 except that the dicing tape C was used instead of the dicing tape A.

Comparative Example 3
(Making dicing tape)
A dicing tape D was obtained in the same manner as in Example 1 except that an EVA-based film (trade name “RB0104”, manufactured by Kurabo Industries Ltd., thickness 130 μm) was used as a base material.

(Preparation of dicing die bond film)
A dicing die bond film D was produced in the same manner as in Example 1 except that the dicing tape D was used instead of the dicing tape A.

<Evaluation>
The dicing tape and the dicing die bond film obtained in Examples and Comparative Examples were evaluated as follows. The results are shown in Table 1.

(Tensile stress and stress relaxation rate of dicing tape)
From the dicing tapes obtained in Examples and Comparative Examples, strip-shaped test pieces were obtained by cutting out a base material into a length of 140 mm and a width of 20 mm with the MD direction as the length direction. This strip-shaped test piece is subjected to a tensile tester (trade name "AFX-50NX", manufactured by Shimadzu Corporation) at an initial chuck distance of 100 mm and a tensile speed of 100 mm / min under an atmosphere of 23 ° C. and 50% RH. The stress value was measured for 2000 seconds after stretching (stretching) to an elongation rate of 30% and stopping. Then, the stress value at the time of stretching and stopping was obtained as "stress value at 30% stretching", and the stress value at the time of 1000 seconds after stretching was obtained as "stress value after 1000 seconds of 30% stretching". Then, the stress value at the time of 30% stretching was A, the stress value after 1000 seconds of 30% stretching was B, and the stress relaxation rate 1000 seconds after stretching at 23 ° C. was obtained by the following formula. ..
Stress relaxation rate (%) = (AB) / A × 100

(Floating semiconductor chip with die bond film)
Using the product name "ML300-Integration" (manufactured by Tokyo Precision Co., Ltd.) as a laser processing device, the condensing points are aligned inside the 12-inch semiconductor wafer, and along the grid-like (10 mm x 10 mm) division schedule line. A laser beam was irradiated to form a modified region inside the semiconductor wafer. Irradiation of laser light was performed under the following conditions.
(A) Laser light
Laser light source Semiconductor laser excitation Nd: YAG laser
Wavelength 1064nm
Laser light spot cross-sectional area 3.14 × 10 ^-8 cm ²
Oscillation form Q-switched pulse
Repeat frequency 100kHz
Pulse width 30ns
Output 20μJ / pulse
Laser light quality TEM00 40
Polarization characteristics Linear polarization (B) Condensing lens
Magnification 50 times
NA 0.55
Transmittance to laser light wavelength 60%
(C) The moving speed of the cutting table on which the semiconductor substrate is placed is 100 mm / sec.

After forming a modified region inside the semiconductor wafer, a protective tape for back grinding is attached to the surface of the semiconductor wafer, and a back grinder (trade name "DGP8760", manufactured by Disco Co., Ltd.) is used to increase the thickness of the semiconductor wafer. The back surface was ground to 30 μm.

The semiconductor wafer on which the modified region was formed and the dicing ring were bonded to the dicing die bond films obtained in Examples and Comparative Examples. Then, the semiconductor wafer and the die bond film were cut using a die separator (trade name "DDS2300", manufactured by DISCO Corporation). Specifically, first, the semiconductor wafer was split by performing cool expansion with a cool expander unit under the conditions of a temperature of −15 ° C., a predetermined speed, and a predetermined expand amount. The speed at the time of cool expansion (expanding speed) was 0.5 mm / sec in Example 1, 1 mm / sec in Comparative Examples 1 to 3, and the expanding amount was 3 mm in Example 1, and Comparative Examples 1 and 2. Is 8 mm, and Comparative Example 3 is 4 mm. Since the preferable conditions for cool expanding (expanding speed, expanding amount, etc.) differ depending on the type of dicing tape, cool expanding was performed under the most preferable conditions in the examples and each comparative example. After the cool expansion, it was confirmed that there was no problem in cutting and floating of the semiconductor chip with the die bond film.

After the semiconductor wafer and the die bond film were cut, room temperature expansion was performed using the above-mentioned cool expander unit as it was under the conditions of room temperature, an expanding speed of 0.3 mm / sec, and an expanding amount of 8 mm. Then, the area of the portion where the die bond film was floating from the dicing tape (the ratio of the area of the floating semiconductor chip with the die bond film when the total area of the die bond film was 100%) was observed with a microscope. If there was no floating or within the permissible range, it was evaluated as ◯, and if the floating was conspicuous, it was evaluated as ×. The results are shown in Table 1. Since the preferable conditions for normal temperature expansion (expanding speed, expanding amount, etc.) differ depending on the type of dicing tape, normal temperature expanding was performed under the most preferable conditions in the examples and each comparative example for evaluation.

1 Dicing tape 11 Base material 12 Adhesive layer 2, 21 Die bond film 3 Dicing die bond film W, 30A Semiconductor wafer 30B Semiconductor wafer divider 30a Split groove 30b Modification region 31 Semiconductor chip

Claims (6)

It has a base material and an adhesive layer laminated on the base material.
The stress relaxation rate after 1000 seconds after stretching by 30% at a temperature condition of 23 ° C. in at least one direction is 45% or more.
A dicing tape having a stress value of 4 MPa or less 1000 seconds after stretching by 30% under a temperature condition of 23 ° C. in at least one direction. The dicing tape according to claim 1, wherein the base material has a thickness of 40 to 150 μm. The dicing tape according to claim 1 or 2, wherein the stress value when stretched by 30% at a temperature condition of 23 ° C. in at least one direction is 5 MPa or more. The difference between the stress value when stretched by 30% under the temperature condition of 23 ° C. in at least one direction and the stress value after 1000 seconds after stretching by 30% under the temperature condition of 23 ° C. in at least one direction. The dicing tape according to any one of claims 1 to 3, which is 5 MPa or more. It has the dicing tape according to any one of claims 1 to 4 and the dicing film laminated on the adhesive layer in the dicing tape.
The dicing die bond film is a dicing die bond film that is used by being cut by applying tensile stress. The step A of attaching a fragment of a semiconductor wafer including a plurality of semiconductor chips or a semiconductor wafer that can be fragmented to a plurality of semiconductor chips on the dicing die bond film side of the dicing die bond film according to claim 5.
Step B of expanding the dicing tape in the dicing die bond film under relatively low temperature conditions and cutting at least the dicing film to obtain a semiconductor chip with the die bond film.
Step C of expanding the dicing tape under relatively high temperature conditions to widen the distance between the semiconductor chips with the die bond film.
A method for manufacturing a semiconductor device, comprising the step D of picking up the semiconductor chip with a die-bonded film.

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