KR20200143259A - Dicing tape and dicing die-bonding film - Google Patents

Abstract

A dicing tape according to the present invention is a dicing tape in which an adhesive layer is laminated on a base layer, and has a tensile storage modulus of 100 MPa or more at -5°C. The dicing tape improves the slicing properties of semiconductor wafers.

Description

Dicing tape and dicing die-bonding film {DICING TAPE AND DICING DIE-BONDING FILM}

The present invention relates to a dicing tape and a dicing die bonding film.

[Cross reference of related applications]

This application claims the priority of Japanese Patent Application No. 2019-110200, and is incorporated in the description of this specification by reference.

Conventionally, in the manufacture of a semiconductor device, it is known to use a dicing tape or a dicing die bonding film in order to obtain a semiconductor chip for die bonding.

The dicing tape is constituted by laminating a pressure-sensitive adhesive layer on a base layer, and the dicing die-bonding film is constituted by laminating a die-bonding layer on the pressure-sensitive adhesive layer of the dicing tape so as to be peelable.

Further, as a method of obtaining a semiconductor chip (die) for die bonding using the dicing die-bonding film, a groove is formed in the semiconductor wafer to be processed into chips (die) by cutting the semiconductor wafer, and further The half-cut process of grinding the semiconductor wafer to make the thickness thinner, the back-grinding process of grinding the semiconductor wafer after the half-cut process to make the thickness thinner, and one side of the semiconductor wafer after the back-grinding process (e.g., Surface) is affixed to the die-bonding layer to fix the semiconductor wafer to the dicing tape, the expansion process to increase the spacing between the half-cut semiconductor chips, and the capping process to maintain the spacing between the semiconductor chips And, a pickup process in which the semiconductor chip is removed while the die-bonding layer is affixed by peeling between the die-bonding layer and the pressure-sensitive adhesive layer, and the semiconductor chip having the die-bonding layer is attached to an adherend (for example, a mounting substrate, etc.) It is known to employ a method having a die bonding process of adhering to ).

In addition, in the above caph holding step, the dicing tape is heat-shrunk by contacting the dicing tape with hot air (for example, 100 to 130°C), then cooled and solidified, and the distance between the divided adjacent semiconductor chips (cap) Has been maintained.

Further, in the expanding process, the die bonding layer is divided into a size corresponding to the size of a plurality of individualized semiconductor chips.

In the method of obtaining a semiconductor chip for die bonding by using the dicing die-bonding film as described above, Patent Document 1 discloses a dicing tape having specific physical properties (initial elastic modulus at -10°C is 200 MPa or more and 380 MPa or less, and- Tan δ (loss modulus/storage modulus) at 10°C is a dicing tape of 0.080 or more and 0.3 or less), and further, by performing the expand step at low temperature conditions of -15 to 5°C, the expand step is In this regard, it is disclosed that the cutting property (eg, ease of cutting, uniform cutting property, etc.) from the semiconductor wafer to a plurality of semiconductor chips can be improved.

Japanese Patent Publication No. 2015-185591

As described in Patent Document 1, by using a dicing tape having specific physical properties and performing the expansion process under the low temperature condition, the cutting property of the semiconductor wafer is improved, but dicing tape and dicing die bonding When using a film and cutting a semiconductor wafer into a plurality of semiconductor chips by expansion under low temperature conditions, it is desired to further improve the cutting property of the semiconductor wafer.

Particularly, when a semiconductor wafer is cut into a plurality of small semiconductor chips (e.g., a semiconductor chip having a length of 12 mm x a width of 4 mm x a thickness of 0.055 mm), it is desirable to further improve the cutting property of the semiconductor wafer. Has become.

Therefore, it is an object of the present invention to provide a dicing tape and a dicing die bonding film capable of further improving the splitting property from a semiconductor wafer to a plurality of semiconductor chips by expansion under low temperature conditions.

The dicing tape according to the present invention,

It is a dicing tape in which an adhesive layer is laminated on a base layer,

The tensile storage modulus at -5°C is 100 MPa or more.

In the dicing tape,

It is preferable that the 30% tensile stress at -5°C is 5.5N/10mm or more.

In the dicing tape,

It is preferable that the 30% tensile stress at room temperature is 3.2 N/10 mm or more.

In the dicing tape,

It is preferable that the ratio of 30% tensile stress at -5°C to 30% tensile stress at room temperature is 1.7 or more.

The dicing die bonding film according to the present invention,

A dicing tape in which an adhesive layer is laminated on the base layer,

It has a die-bonding layer laminated on the pressure-sensitive adhesive layer of the dicing tape,

The tensile storage modulus at -5°C is 100 MPa or more.

1 is a cross-sectional view showing a configuration of a dicing tape according to an embodiment of the present invention.
2 is a cross-sectional view showing a configuration of a dicing die-bonding film according to an embodiment of the present invention.
3A is a cross-sectional view schematically showing a state of half-cut processing in a method for manufacturing a semiconductor integrated circuit.
3B is a cross-sectional view schematically showing a state of half-cutting in a method for manufacturing a semiconductor integrated circuit.
Fig. 3C is a cross-sectional view schematically showing a state of back grinding in a method for manufacturing a semiconductor integrated circuit.
3D is a cross-sectional view schematically showing a state of back grinding in a method of manufacturing a semiconductor integrated circuit.
4A is a cross-sectional view schematically showing a state of a mounting step in a method for manufacturing a semiconductor integrated circuit.
4B is a cross-sectional view schematically showing a state of a mounting process in a method for manufacturing a semiconductor integrated circuit.
5A is a cross-sectional view schematically illustrating a state of an expand process at a low temperature in a method for manufacturing a semiconductor integrated circuit.
5B is a cross-sectional view schematically illustrating a state of an expand process at a low temperature in a method for manufacturing a semiconductor integrated circuit.
5C is a cross-sectional view schematically showing a state of an expanding process at a low temperature in a method for manufacturing a semiconductor integrated circuit.
6A is a cross-sectional view schematically showing a state of an expand process at room temperature in a method for manufacturing a semiconductor integrated circuit.
6B is a cross-sectional view schematically showing a state of an expand process at room temperature in a method for manufacturing a semiconductor integrated circuit.
7 is a cross-sectional view schematically illustrating a state of a cap holding step in a method for manufacturing a semiconductor integrated circuit.
8 is a cross-sectional view schematically showing a mode of a pickup step in a method for manufacturing a semiconductor integrated circuit.

Hereinafter, an embodiment of the present invention will be described.

[Dicing Tape]

As shown in FIG. 1, the dicing tape 10 according to the present embodiment is a dicing tape in which an adhesive layer 2 is laminated on a base layer 1, and has a tensile storage elastic modulus at -5°C. It is 100 MPa or more.

The reason why the dicing tape 10 has a tensile storage elastic modulus of 100 MPa or more at -5° C. improves the cutting property of the semiconductor wafer affixed to the dicing tape 10 is considered as follows.

In order to improve the cleavability of the semiconductor wafer affixed to the dicing tape 10 into a plurality of semiconductor chips by expansion (e.g., ease of cleaving, uniform cleavability, etc.), at the start of segmentation of the semiconductor wafer. Thus, it is necessary to sufficiently add a tensile force to the entire dicing tape 10.

Here, when the dicing tape 10 is relatively soft at the start of cutting, that is, when the tensile storage modulus of the dicing tape 10 is relatively small, the tensile force at the start of cutting is other than the dicing tape 10 It is considered that it is absorbed by the dicing tape 10 as it approaches the center part from the peripheral part and gradually becomes small. Therefore, it is considered that it is difficult to sufficiently apply the tensile force at the start of cutting to the entire dicing tape 10.

In contrast, the dicing tape 10 according to the present embodiment has a relatively large tensile storage modulus of 100 MPa or more, so the tensile force at the start of cutting is from the outer periphery of the dicing tape 10 to the central portion. It is considered that it becomes difficult to be absorbed by the dicing tape 10 as it approaches. Therefore, the tensile force at the start of cutting is sufficiently applied to the entire dicing tape 10, and as a result, it becomes easy to cut the semiconductor wafer into a plurality of semiconductor chips, and a semiconductor chip that is cut relatively evenly is obtained. It is considered that it becomes easier, that is, the splitting property from a semiconductor wafer to a plurality of semiconductor chips can be further improved.

In addition, as described in the section of Examples to be described later, since the tensile storage modulus of the dicing tape 10 at -5°C is 100 MPa or more, in particular, a semiconductor wafer (for example, a semiconductor wafer having a diameter of 200 mm (8 inches)) ) Can be further improved when cutting into a small semiconductor chip (eg, 12 mm long x 4 mm wide x 0.55 mm thick).

For the reason, the present inventors estimate as follows.

In the case of cutting semiconductor wafers of the same size, the smaller the size of the semiconductor chip after cutting, the smaller the spacing between the grooves (lines) formed in the semiconductor wafer in the half-cut process. The number increases. As a result, the elongation rate of the groove in the expanding process decreases.

Therefore, in the expansion process, in order to suppress the occurrence of a cutting failure when a semiconductor wafer is cut into a small semiconductor chip, it is necessary to generate a high stress with a smaller elongation rate.

Here, since the elastic modulus means the slope of the stress with respect to the elongation (deformation amount) when the base layer is stretched, it is considered that the higher the elastic modulus, the higher stress can be generated with a smaller elongation.

And, in the expanding process using the dicing tape 10, the cutting property when cutting the semiconductor wafer into a plurality of small semiconductor chips is good, and tearing of the dicing tape 10 due to tensile force occurs. From the viewpoint of being difficult to do, it is optimal to perform expansion at a temperature of -5°C. Therefore, by setting the tensile storage modulus at -5°C to a relatively high value such as 100 MPa or more, high stress can be achieved with less elongation. I think it can happen.

As a result, the present inventors estimate that the cutting property when cutting a semiconductor wafer into a small semiconductor chip can be further improved.

It is preferable that the dicing tape 10 according to the present embodiment has a tensile storage modulus of 400 MPa or less at -5°C.

Thereby, since the dicing tape 10 is relatively easily elongated while applying sufficient tensile force to the entire dicing tape 10, the semiconductor wafer affixed to the dicing tape 10 is cut into semiconductor chips. In addition, while suppressing tearing of the dicing tape 10 due to a tensile force, it is possible to further improve the cutting properties from a semiconductor wafer to a plurality of semiconductor chips.

Further, when the tensile storage modulus at -5°C is 400 MPa or less, in particular, it is possible to further improve the cleavage property from a semiconductor wafer to a plurality of small semiconductor chips.

The tensile storage modulus at -5°C can be determined as follows.

Specifically, a dicing tape having a length of 40 mm (measurement length) and a width of 10 mm is used as a test piece, and a solid viscoelasticity measuring device (e.g., Model RSAIII, manufactured by Rheometric Scientific Co., Ltd.) is used, and a frequency of 1 Hz, The tensile storage modulus of the test piece is measured in a temperature range of -50 to 100°C under the conditions of a deformation amount of 0.1%, a temperature increase rate of 10°C/min, and a chuck distance of 22.5 mm. In that case, it can be calculated|required by reading the value at -5 degreeC.

In addition, the measurement is performed by pulling the test piece in the MD direction (resin flow direction).

It is preferable that the dicing tape 10 according to the present embodiment has a 30% tensile stress at -5°C of 5.5 N/10 mm or more.

It is preferable that the dicing tape 10 according to the present embodiment has a 30% tensile stress at -5°C of 30 N/10 mm or less.

From this, during expansion, the dicing tape 10 is relatively easily stretched while applying sufficient tensile force to the entire dicing tape 10, so that the dicing tape 10 affixed to the semiconductor wafer is extended. By pending and dividing the semiconductor wafer into semiconductor chips, it is possible to further improve the cleavability from the semiconductor wafer to a plurality of semiconductor chips while suppressing tearing of the dicing tape due to the expansion.

In addition, when the 30% tensile stress at -5°C is 30 N/10 mm or less, in particular, it is possible to further improve the breaking property from a semiconductor wafer to a plurality of small semiconductor chips.

It is preferable that the dicing tape 10 according to the present embodiment has a 30% tensile stress at room temperature (23°C) of 3.2 N/10 mm or more.

It is preferable that the 30% tensile stress at room temperature (23° C.) is 30 N/10 mm or less.

From this, during expansion, the dicing tape 10 is relatively easily stretched while applying sufficient tensile force to the entire dicing tape 10, so that the dicing tape 10 affixed to the semiconductor wafer is extended. By pending and dividing the semiconductor wafer into semiconductor chips, it is possible to further improve the cleavability from the semiconductor wafer to a plurality of semiconductor chips while suppressing tearing of the dicing tape due to the expansion.

Further, by setting the 30% tensile stress at room temperature to 30 N/10 mm or less, in particular, it is possible to further improve the breaking property from a semiconductor wafer to a plurality of small semiconductor chips.

The 30% tensile stress at -5 degreeC and room temperature can be calculated|required as follows.

Specifically, a dicing tape having a length of 100 mm and a width of 10 mm was used as a test piece, and a tensile tester (Tensilon universal testing machine, manufactured by Shimadzu Seisakusho) was used, and the measurement temperature (-5°C and room temperature (23°C±1°C)) ), under conditions of 50 mm interchuck distance and 100 mm/min of tensile speed, the test piece is stretched and the stress when the elongation reaches 30% (65 mm interchuck distance) can be obtained.

In addition, the measurement is performed by pulling the test piece in the MD direction (resin flow direction).

In the dicing tape 10 according to the present embodiment, it is preferable that the ratio of the 30% tensile stress at -5°C to the 30% tensile stress at room temperature is 1.7 or more.

The dicing tape 10 according to the present embodiment may have a ratio of 30% tensile stress at -5°C to 30% tensile stress at room temperature of 3.0 or less.

As a result, since the dicing tape 10 is relatively easily elongated while applying a sufficient tensile force to the entire dicing tape 10 during expansion, the dicing tape 10 affixed to the semiconductor wafer is extended. While pending and dividing the semiconductor wafer into semiconductor chips, the dicing tape can be further improved in splitting properties from a semiconductor wafer to a plurality of semiconductor chips while suppressing tearing of the dicing tape due to expansion.

In addition, since the ratio of the 30% tensile stress at -5°C to the 30% tensile stress at room temperature is 3.0 or less, in particular, it is possible to further improve the cleavability from a semiconductor wafer to a plurality of small semiconductor chips.

The base material layer 1 supports the pressure-sensitive adhesive layer 2. The base material layer 1 contains resin. The resin contained in the base layer 1 is polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyvinyl chloride, polychloride Vinylidene, polyphenyl sulfide, fluorine resin, cellulose resin, silicone resin, and the like.

Examples of the polyolefin include homopolymers of α-olefins, copolymers of two or more α-olefins, block polypropylene, random polypropylene, and copolymers of one or more α-olefins and other vinyl monomers. I can.

As a homopolymer of an α-olefin, it is preferable that it is a homopolymer of an α-olefin having 2 or more and 12 or less carbon atoms. Examples of such a homopolymer include ethylene, propylene, 1-butene, and 4-methyl-1-pentene.

As a copolymer of two or more types of α-olefins, ethylene/propylene copolymer, ethylene/1-butene copolymer, ethylene/propylene/1-butene copolymer, ethylene/C5 or more and 12 or less α-olefin copolymer, propylene /Ethylene copolymer, propylene/1-butene copolymer, and propylene/alpha-olefin copolymer of 5 or more and 12 or less carbon atoms, etc. are mentioned.

Examples of the copolymer of one or two or more α-olefins and other vinyl monomers include ethylene-vinyl acetate copolymer (EVA) and the like.

The polyolefin may be what is called an α-olefin-based thermoplastic elastomer. Examples of the α-olefin-based thermoplastic elastomer include a combination of a propylene/ethylene copolymer and a propylene homopolymer, or a propylene/ethylene/α-olefin terpolymer having 4 or more carbon atoms.

As a commercial item of an α-olefin-based thermoplastic elastomer, for example, Vistamax 3980 (manufactured by Exxon Mobil Chemical), which is a propylene-based elastomer resin, is mentioned.

The base layer 1 may contain one type of resin described above, or may contain two or more types of the above resins.

In addition, when the pressure-sensitive adhesive layer 2 contains an ultraviolet-curable pressure-sensitive adhesive to be described later, it is preferable that the base layer 1 is configured to have ultraviolet transmittance.

The base layer 1 may have a single layer structure or a laminate structure. The base material layer 1 may be obtained by non-stretch molding or may be obtained by stretch molding, but it is preferably obtained by stretch molding. When the base layer 1 is a laminated structure, the base layer 1 has a layer containing an elastomer (hereinafter referred to as an elastomer layer) and a layer containing a non-elastomeric layer (hereinafter referred to as a non-elastomeric layer). desirable.

When the base material layer 1 has an elastomer layer and a non-elastomeric layer, the elastomer layer can function as a stress relaxation layer that relieves tensile stress. That is, since the tensile stress generated in the base layer 1 can be made relatively small, the base layer 1 can be made relatively easily elongated while having an appropriate hardness.

Thereby, it is possible to improve the cleavability from a semiconductor wafer to a plurality of semiconductor chips.

In addition, it is possible to prevent the substrate layer 1 from being torn and damaged during expansion in the cutting process.

In addition, in the present specification, the elastomer layer means a low elastic modulus layer having a lower tensile storage modulus at room temperature than a non-elastomeric layer. Examples of the elastomer layer include those having a tensile storage modulus of 10 MPa or more and 100 MPa or less at room temperature, and examples of the non-elastomeric layer include those having a tensile storage elastic modulus of 200 MPa or more and 500 MPa or less at room temperature.

Although the elastomer layer may contain one type of elastomer or two or more types of elastomers, it is preferable to contain an α-olefin-based thermoplastic elastomer.

The non-elastomer layer may contain one type of non-elastomer, or may contain two or more types of non-elastomers, but preferably contains metallocene PP described later.

When the base layer 1 has an elastomer layer and a non-elastomeric layer, the base layer 1 has an elastomer layer as a center layer, and a three-layer structure having a non-elastomeric layer on opposite sides of the center layer (non-elastomeric layer) It is preferably formed of an elastomer layer/elastomer layer/non-elastomeric layer) (see FIG. 1). In addition, in Fig. 1, one non-elastomeric layer is shown as the first resin layer 1a, the elastomer layer is shown as the second resin layer 1b, and the other non-elastomeric layer is shown as the third resin layer 3c. Is shown.

In addition, as described above, in the calf holding process, hot air (eg, 100 to 130°C) is applied to the dicing die-bonding film maintained in an expanded state at room temperature (eg, 23°C), In order to cool and solidify the dicing die-bonding film after heat shrinking, it is preferable that the outermost layer of the base material layer 1 contains a resin having a melting point close to the temperature of the hot air applied to the dicing tape. Thereby, the melted outermost layer can be solidified more quickly by letting hot air hit.

As a result, in the caph holding process, the caph can be more sufficiently maintained.

When the base layer 1 is a laminated structure of an elastomer layer and a non-elastomeric layer, the elastomer layer includes an α-olefin-based thermoplastic elastomer, and the non-elastomeric layer includes a polyolefin such as metallocene PP described below, The elastomer layer preferably contains 50% by mass or more and 100% by mass or less, and 70% by mass or more and 100% by mass or less of the α-olefin-based thermoplastic elastomer with respect to the total mass of the elastomer forming the elastomer layer. It is more preferable, it is more preferably 80% by mass or more and 100% by mass or less, particularly preferably 90% by mass or more and 100% by mass or less, and most preferably 95% by mass or more and 100% by mass or less. to be. When the α-olefin-based thermoplastic elastomer is included in the above range, the affinity between the elastomer layer and the non-elastomeric layer is increased, so that the base layer 1 can be extruded relatively easily. Moreover, since the elastomer layer can act as a stress relaxation layer, the semiconductor wafer affixed to the dicing tape can be cut efficiently.

When the base layer 1 is a laminated structure of an elastomer layer and a non-elastomeric layer, the base layer 1 is coextruded by coextrusion of an elastomer and a non-elastomeric layer, and coextrusion molding into a laminated structure of an elastomer layer and a non-elastomeric layer It is preferably obtained. As co-extrusion molding, any suitable co-extrusion molding generally performed in the production of a film or sheet can be adopted. Among co-extrusion molding, it is preferable to employ an inflation method or a co-extrusion T-die method from the viewpoint that the base layer 1 can be obtained efficiently and inexpensively.

When the base layer 1 constituting the laminated structure is obtained by coextrusion molding, since the elastomer layer and the non-elastomeric layer are heated and contacted in a molten state, the difference in melting point between the elastomer and the non-elastomer is preferably smaller. . Since the melting point difference is small, the application of excessive heat to either the elastomer or the non-elastomer having a low melting point is suppressed, so that the elastomer or the non-elastomer having a low melting point is thermally deteriorated to generate by-product Can be suppressed. In addition, it is possible to suppress the occurrence of lamination failure between the elastomer layer and the non-elastomeric layer by excessively decreasing the viscosity of either the elastomer or the non-elastomer having a low melting point. The difference in melting point between the elastomer and the non-elastomer is preferably 0°C or more and 70°C or less, and more preferably 0°C or more and 55°C or less.

The melting points of the elastomer and the non-elastomer can be measured by differential scanning calorimetry (DSC) analysis. For example, it can be measured by using a differential scanning calorimeter device (manufactured by TA Instruments, type DSC Q2000), heating up to 200°C at a temperature increase rate of 5°C/min under a nitrogen gas stream, and determining the peak temperature of the endothermic peak. have.

The thickness of the base layer 1 is preferably 55 µm or more and 195 µm or less, more preferably 55 µm or more and 190 µm or less, still more preferably 55 µm or more and 170 µm or less, and optimally 60 µm or more and 160 µm or less. . By setting the thickness of the base material layer 1 in the above-described range, a dicing tape can be efficiently manufactured, and a semiconductor wafer affixed to the dicing tape can be efficiently cut.

The thickness of the base layer 1 can be obtained by measuring the thickness of five randomly selected points using, for example, a dial gauge (manufactured by PEACOCK, Model R-205), and arithmetic average of these thicknesses. .

In the base layer (1) in which the elastomer layer and the non-elastomeric layer are laminated, the ratio of the thickness of the non-elastomeric layer to the thickness of the elastomer layer is preferably 1/25 or more and 1/3 or less, and 1/25 or more and 1/ It is more preferably 3.5 or less, more preferably 1/25 or more and 1/4 or less, particularly preferably 1/22 or more and 1/4 or less, and 1/20 or more and 1/4 or less is optimal. By setting the ratio of the thickness of the non-elastomeric layer to the thickness of the elastomer layer in the above range, the semiconductor wafer affixed to the dicing tape can be cut more efficiently.

The elastomer layer may have a single-layer (one-layer) structure or a laminated structure. The elastomer layer is preferably a one to five layer structure, more preferably a one to three layer structure, even more preferably a one to two layer structure, and a one layer structure is optimal. When the elastomer layer has a laminated structure, all layers may contain the same elastomer, and at least two layers may contain different elastomers.

The non-elastomeric layer may have a single-layer (one-layer) structure or a laminated structure. The non-elastomer layer is preferably a one to five layer structure, more preferably a one to three layer structure, even more preferably a one to two layer structure, and an optimum one layer structure. When the non-elastomeric layer has a laminated structure, all layers may contain the same non-elastomeric layer, and at least two layers may contain different non-elastomeric layers.

It is preferable that the non-elastomer layer contains, as a non-elastomer, a polypropylene resin (hereinafter referred to as metallocene PP) which is a polymerized product by a metallocene catalyst. Examples of the metallocene PP include a propylene/α-olefin copolymer which is a polymerized product of a metallocene catalyst. When the non-elastomer layer contains metallocene PP, a dicing tape can be efficiently produced, and a semiconductor wafer affixed to the dicing tape can be efficiently cut.

Moreover, as a commercially available metallocene PP, Wintech WXK1233 and Wintech WMX03 (both made by Nippon Polypro) are mentioned.

Here, the metallocene catalyst refers to a transition metal compound (so-called metallocene compound) of group 4 of the periodic table including a ligand having a cyclopentadienyl skeleton, and a metallocene compound to react with the metallocene compound. It is a catalyst composed of a cocatalyst capable of being activated in a stable ionic state, and contains an organoaluminum compound if necessary. The metallocene compound is a crosslinked metallocene compound that enables stereoregular polymerization of propylene.

Among the propylene/α-olefin copolymers that are polymerized products of the metallocene catalyst, propylene/α-olefin random copolymers that are polymerized products of metallocene catalysts are preferred, and propylene/α, which is a polymerized product of metallocene catalysts. -Among the olefin random copolymers, propylene/C2 α-olefin random copolymer, which is a polymer of metallocene catalyst, propylene/C4 α-olefin random copolymer, and metallocene, which are polymerized products of metallocene catalyst It is preferable to be selected from a propylene/carbon 5 ?-olefin random copolymer which is a polymerization product of the catalyst, and among these, a propylene/ethylene random copolymer which is a polymerization product of a metallocene catalyst is most suitable.

The propylene/α-olefin random copolymer, which is a polymer product of the metallocene catalyst, has a melting point of 80° C. or more and 140° C. from the viewpoint of coextrusion film formability with the elastomer layer and the cleavability of the semiconductor wafer affixed to the dicing tape. Hereinafter, it is particularly preferably 100°C or more and 130°C or less.

The melting point of the propylene/α-olefin random copolymer, which is a polymer product of the metallocene catalyst, can be measured by the method described above.

Here, if the elastomer layer is disposed on the outermost layer of the substrate layer 1, when the substrate layer 1 is formed as a roll, the elastomer layers disposed on the outermost layer are easily blocked (it becomes easy to stick together. ). Therefore, it becomes difficult to rewind the base material layer 1 into a roll body. In contrast, in the preferred form of the base layer 1 of the laminated structure described above, since a non-elastomeric layer/elastomer layer/non-elastomeric layer, that is, a non-elastomeric layer is disposed on the outermost layer, the base layer 1 of this embodiment Silver becomes excellent in blocking resistance. Thereby, it is possible to suppress delay in manufacturing a semiconductor device using the dicing tape 10 due to blocking.

It is preferable that the said non-elastomeric layer has a melting|fusing point of 100 degreeC or more and 130 degreeC or less, and further contains a resin whose molecular weight dispersion degree (mass average molecular weight/number average molecular weight) is 5 or less. Metallocene PP is mentioned as such a resin.

When the non-elastomeric layer contains the resin as described above, the non-elastomeric layer can be cooled and solidified more quickly in the carp holding process. Therefore, after heat shrinking the dicing tape, it is possible to sufficiently suppress the shrinkage of the base material layer 1.

Thereby, in the caph holding process, the caph can be more sufficiently maintained.

The adhesive layer 2 contains an adhesive. The pressure-sensitive adhesive layer 2 is held by adhering a semiconductor wafer to be divided into semiconductor chips.

Examples of the pressure-sensitive adhesive include those capable of reducing adhesive force by an external action in the process of using the dicing tape 10 (hereinafter referred to as a reduced-adhesion pressure-sensitive adhesive).

In the case of using a reduced-adhesive pressure-sensitive adhesive as the pressure-sensitive adhesive, in the process of using the dicing tape 10, the pressure-sensitive adhesive layer 2 exhibits a relatively high adhesive strength (hereinafter referred to as a high-adhesion state) and a relatively low adhesive strength. The indicated state (hereinafter referred to as a low-adhesion state) can be used separately. For example, when a semiconductor wafer affixed to the dicing tape 10 is provided for slicing, a plurality of semiconductor chips separated by the slicing of the semiconductor wafer is suppressed from floating or peeling from the adhesive layer 2 To do this, use a high-adhesion state. In contrast, in order to pick up a plurality of individualized semiconductor chips after the semiconductor wafer is cut, a low-adhesion state is used in order to facilitate pickup of the plurality of semiconductor chips from the pressure-sensitive adhesive layer 2.

As the adhesion-reducing pressure-sensitive adhesive, for example, a pressure-sensitive adhesive (hereinafter referred to as a radiation-curable pressure-sensitive adhesive) that can be cured by irradiation with radiation in the process of using the dicing tape 10 is mentioned.

Examples of the radiation-curable pressure-sensitive adhesive include a type of pressure-sensitive adhesive that is cured by irradiation with electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays. Among these, it is preferable to use a pressure-sensitive adhesive (ultraviolet curing pressure-sensitive adhesive) that is cured by irradiation with ultraviolet rays.

Examples of the radiation-curable pressure-sensitive adhesive include a base polymer such as an acrylic polymer, and a radiation-polymerizable monomer component or radiation-polymerizable oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond. Can be mentioned.

Examples of the acrylic polymer include those containing a monomer unit derived from a (meth)acrylic acid ester. As (meth)acrylic acid ester, (meth)acrylic acid alkyl ester, (meth)acrylic acid cycloalkyl ester, (meth)acrylic acid aryl ester, etc. are mentioned, for example.

The pressure-sensitive adhesive layer 2 may contain an external crosslinking agent. As the external crosslinking agent, any one can be used as long as it reacts with the acrylic polymer as the base polymer to form a crosslinked structure. Examples of such external crosslinking agents include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents.

As the radiation polymerizable monomer component, for example, urethane (meth)acrylate, trimethylolpropane tri (meth)acrylate, pentaerythritol tri (meth)acrylate, pentaerythritol tetra (meth)acrylate, dipenta Erythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based. The content ratio of the radiation-polymerizable monomer component or the radiation-polymerizable oligomer component in the radiation-curable pressure-sensitive adhesive is selected within a range in which the adhesiveness of the pressure-sensitive adhesive layer 2 is appropriately reduced.

It is preferable that the said radiation curing adhesive contains a photoinitiator. As a photoinitiator, for example, α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds Compounds, campoquinone, halogenated ketones, acylphosphine oxide, and acylphosphonate.

The pressure-sensitive adhesive layer 2 may contain a crosslinking accelerator, a tackifier, an anti-aging agent, a pigment, or a coloring agent such as a dye, in addition to the respective components.

The thickness of the pressure-sensitive adhesive layer 2 is preferably 1 µm or more and 50 µm or less, more preferably 2 µm or more and 30 µm or less, and still more preferably 5 µm or more and 25 µm or less.

[Dicing Die Bond Film]

Next, the dicing die bonding film 20 will be described with reference to FIG. 2. In addition, in the description of the dicing die-bonding film 20, in the part overlapping with the dicing tape 10, the description is not repeated.

As shown in FIG. 2, the dicing die-bonding film 20 according to the present embodiment includes a dicing tape 10 in which an adhesive layer 2 is laminated on a base layer 1, and a dicing tape 10. ) And a die-bonding layer 3 laminated on the pressure-sensitive adhesive layer 2.

In the dicing die bonding film 20, a semiconductor wafer is affixed on the die bonding layer 3.

In the cutting of the semiconductor wafer using the dicing die-bonding film 20, the die-bonding layer 3 is also cut together with the semiconductor wafer. The die-bonding layer 3 is divided into a size corresponding to the size of a plurality of individual semiconductor chips. Thereby, a semiconductor chip provided with the die-bonding layer 3 can be obtained.

As described above, the dicing tape 10 of the dicing die-bonding film 20 has a tensile storage modulus of 100 MPa or more at -5°C.

Here, generally, the die-bonding layer 3 of the dicing die-bonding film 20 contains an acrylic resin having a glass transition temperature (Tg) of around 0°C. It becomes fragile by setting it as a temperature lower than the Tg of resin. On the other hand, if the temperature of the expand process is too low, the elastic modulus of the die-bonding layer 3 rises to such an extent that it interferes with the splitting property of the die-bonding layer 3. Therefore, from the viewpoint of the cleavability of the die-bonding layer 3, it is preferable that the temperature of the expansion step be -5°C.

Therefore, in the expanding process using the dicing die-bonding film 20, as described above, the cutting property when cutting the semiconductor wafer into a plurality of small semiconductor chips is good, and the dicing tape by tensile force In addition to the viewpoint that tearing of (10) is less likely to occur, it is considered optimal to perform the expansion process by employing a temperature of -5°C from the viewpoint of the breakability of the die-bonding layer 3.

Therefore, also in the dicing die-bonding film 20, it is considered that high stress can be generated with a smaller elongation by setting the tensile storage modulus at -5°C to a relatively high value of 100 MPa.

As a result, it is estimated that the cutting property when cutting a semiconductor wafer into a small semiconductor chip can be further improved.

As for the dicing tape 10 of the dicing die-bonding film 20, it is preferable that the tensile storage modulus at -5 degreeC is 400 MPa or less as mentioned above.

In addition, the dicing tape 10 of the dicing die-bonding film 20 preferably has a 30% tensile stress at -5°C of 5.5 N/10 mm or more, as described above, and 30% tensile stress at room temperature. It is preferable that it is 3.2N/10mm, and it is preferable that the ratio of 30% tensile stress at -5 degreeC to 30% tensile stress at room temperature is 1.7 or more.

In addition, the dicing tape 10 of the dicing die-bonding film 20 preferably has a 30% tensile stress at -5°C of 30 N/10 mm or less, as described above, and a 30% tensile stress at room temperature. It is preferably 30N/10mm or less.

It is preferable that the die-bonding layer 3 has thermosetting. By including at least one of a thermosetting resin and a thermoplastic resin having a thermosetting functional group in the die-bonding layer 3, thermosetting can be imparted to the die-bonding layer 3.

When the die-bonding layer 3 contains a thermosetting resin, examples of such thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. I can. Among these, it is preferable to use an epoxy resin.

As an epoxy resin, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, Epoxy resins of orthocresol novolac type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type, and glycidylamine type are mentioned.

As a phenol resin as a curing agent for an epoxy resin, polyoxystyrene, such as a novolac type phenol resin, a resol type phenol resin, and polyparaoxystyrene, is mentioned, for example.

When the die-bonding layer 3 contains a thermoplastic resin having a thermosetting functional group, examples of such thermoplastic resin include an acrylic resin containing a thermosetting functional group. Examples of the acrylic resin in the thermosetting functional group-containing acrylic resin include those containing a monomer unit derived from a (meth)acrylic acid ester.

In the thermosetting resin having a thermosetting functional group, a curing agent is selected according to the kind of the thermosetting functional group.

The die bonding layer 3 may contain a thermosetting catalyst from the viewpoint of sufficiently advancing the curing reaction of the resin component or increasing the curing reaction rate. Examples of the thermosetting catalyst include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihalogenborane compounds.

The die bonding layer 3 may contain a thermoplastic resin. The thermoplastic resin functions as a binder. As the thermoplastic resin, for example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic Polyimide resins, polyamide resins such as polyamide 6 and polyamide 6,6, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. Only one type of thermoplastic resin may be used, or two or more types may be used in combination. As the thermoplastic resin, since there are few ionic impurities and high heat resistance, an acrylic resin is preferable from the viewpoint that it becomes easy to secure connection reliability by a die-bonding layer.

It is preferable that the said acrylic resin is a polymer which contains the monomer unit derived from a (meth)acrylic acid ester as the largest number of monomer units by mass ratio. As (meth)acrylic acid ester, (meth)acrylic acid alkyl ester, (meth)acrylic acid cycloalkyl ester, (meth)acrylic acid aryl ester, etc. are mentioned, for example. The acrylic resin may contain a monomer unit derived from another component copolymerizable with a (meth)acrylic acid ester. Examples of the other components include functional group-containing monomers such as carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide and acrylonitrile, and various polyfunctionals. And monomers. From the viewpoint of realizing a high cohesive force in the die-bonding layer, the acrylic resin includes a (meth)acrylic acid ester (especially, a (meth)acrylate alkyl ester having 4 or less carbon atoms in the alkyl group), a carboxyl group-containing monomer, and a nitrogen atom-containing monomer. And, a copolymer of a polyfunctional monomer (especially a polyglycidyl polyfunctional monomer) is preferable, and copolymerization of ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile, and polyglycidyl (meth)acrylate It is more preferable to have a chain.

The die bonding layer 3 may contain one type or two or more types of other components as necessary. As another component, a flame retardant, a silane coupling agent, and an ion trapping agent are mentioned, for example.

The thickness of the die-bonding layer 3 is preferably 40 µm or more, more preferably 60 µm or more, and even more preferably 80 µm or more. Further, the thickness of the die bonding layer 3 is preferably 200 µm or less, more preferably 160 µm or less, and further preferably 120 µm or less.

The dicing die-bonding film 20 according to the present embodiment is used, for example, as an auxiliary tool for manufacturing a semiconductor integrated circuit. Hereinafter, a specific example of use of the dicing die-bonding film 20 will be described.

Hereinafter, an example using the dicing die-bonding film 20 in which the base layer 1 is one layer will be described.

The method of manufacturing a semiconductor integrated circuit includes a half-cut process in which a groove is formed in a semiconductor wafer to process a semiconductor wafer into a chip (die) by a cutting process, and the semiconductor wafer is further ground to reduce the thickness, and a half-cut process. A back-grinding process in which the semiconductor wafer after the process is ground to reduce its thickness, and one side of the semiconductor wafer after the back-grinding process (e.g., the side opposite to the circuit surface) is affixed to the die bonding layer 3, and a dicing tape (10) The mounting process of fixing the semiconductor wafer to each other, the expanding process of increasing the spacing between the half-cut semiconductor chips, the cap holding process of maintaining the spacing between the semiconductor chips, the die bonding layer 3 and the adhesive A pick-up process in which the semiconductor chip (die) is removed by peeling between the layers 2 and the die-bonding layer 3 is attached, and the semiconductor chip (die) with the die-bonding layer 3 is attached to the substrate. It has a die-bonding process to adhere to it. When performing these processes, the dicing tape (dicing die-bonding film) of this embodiment is used as a manufacturing auxiliary tool.

In the half-cutting process, as shown in Figs. 3A and 3B, a half-cutting process for cutting the semiconductor integrated circuit into small pieces (die) is performed. Specifically, the wafer processing tape T is affixed to the surface of the semiconductor wafer W on the opposite side to the circuit surface (see Fig. 3A). Further, a dicing ring R is provided on the wafer processing tape T (see Fig. 3A). In the state where the wafer processing tape T is affixed, a dividing groove is formed (see Fig. 3B). In the back grinding process, as shown in Figs. 3C and 3D, the semiconductor wafer is ground to reduce the thickness. Specifically, while the back grinding tape G is affixed to the grooved surface, the wafer processing tape T first affixed is peeled off (see Fig. 3C). In the state where the backgrind tape G is affixed, grinding is performed until the semiconductor wafer W has a predetermined thickness (see Fig. 3D).

In the mounting process, as shown in Figs. 4A to 4B, after installing the dicing ring R on the pressure-sensitive adhesive layer 2 of the dicing tape 10, the surface of the exposed die-bonding layer 3 is The cut-processed semiconductor wafer W is affixed (see Fig. 4A). After that, the back grinding tape G is peeled off from the semiconductor wafer W (see Fig. 4B).

In the expand process, as shown in Figs. 5A to 5C, the dicing ring R is fixed to the holder H of the expander. The dicing die-bonding film 20 is stretched so as to expand in the plane direction by pushing the dicing die-bonding film 20 from the lower side using the push-up member U provided in the expander (see Fig. 5B). . Thereby, under a specific temperature condition, the semiconductor wafer W which has been half-cut is cut. The temperature conditions are, for example, -20 to 5°C, preferably -15 to 0°C, and more preferably -10 to -5°C. By lowering the push-up member U, the expanded state is released (see Fig. 5C).

In addition, in the expand process, as shown in Figs. 6A to 6B, under a higher temperature condition (for example, room temperature (23°C)), the dicing tape 10 is stretched to increase the area. . Thereby, the divided adjacent semiconductor chip W is separated in the plane direction of the film surface, and the gap is widened.

Here, in the dicing die-bonding film 20 according to the present embodiment, the tensile storage elastic modulus at -5°C of the die-bonding tape 10 is 100 MPa or more. Therefore, under low temperature conditions, a plurality of The splitting property into a semiconductor chip can be further improved.

In the caph holding process, as shown in FIG. 7, hot air (for example, 100 to 130°C) is applied to the dicing tape 10 to heat-shrink the dicing tape 10, and then cool and solidify it. The distance (calf) between adjacent semiconductor chips W is maintained.

In the pick-up step, as shown in FIG. 8, the semiconductor chip W in a state in which the die bonding layer 3 is affixed is peeled from the adhesive layer 2 of the dicing tape 10. Specifically, the pin member P is raised, and the semiconductor chip W to be picked up is pushed up through the dicing tape 10. The pushed-up semiconductor chip is held by the suction jig J.

In the die bonding process, the semiconductor chip W in the state in which the die bonding layer 3 is affixed is adhered to the adherend.

In addition, in the manufacture of the semiconductor integrated circuit described above, an example in which the dicing die-bonding film 20 is used as an auxiliary tool has been described. However, even when the dicing tape 10 is used as an auxiliary tool, it is similar to the above. A semiconductor integrated circuit can be manufactured.

Matters disclosed by this specification include the following.

(One)

It is a dicing tape in which an adhesive layer is laminated on a base layer,

Tensile storage modulus at -5°C is 100 MPa or more,

Dicing tape.

According to this configuration, since the dicing tape has a tensile storage modulus of 100 MPa or more at -5°C, the dicing tape can have a relatively large hardness.

Therefore, in the case of affixing to a semiconductor wafer and expanding the dicing tape under low temperature conditions (for example, -15°C to 5°C) to cut the semiconductor wafer into a plurality of semiconductor chips, At the initiation of the pand, a sufficient tensile force can be applied to the entire dicing tape.

Thereby, while it becomes easy to divide the semiconductor wafer into a plurality of semiconductor chips, it becomes easy to obtain a semiconductor chip which is relatively uniformly divided.

That is, the cutting property of the semiconductor wafer can be further improved.

(2)

The tensile storage modulus at -5°C is 400 MPa or less,

The dicing tape according to (1) above.

According to this configuration, since the dicing tape is relatively easily elongated while applying sufficient tensile force to the entire dicing tape, when cutting into a plurality of semiconductor chips from a semiconductor wafer affixed to the dicing tape, While suppressing tearing of the dicing tape due to tensile force, it is possible to further improve the cleavage property from a semiconductor wafer to a plurality of semiconductor chips.

In addition, when the 30% tensile stress at -5°C is 30 N/10 mm or less, in particular, it is possible to further improve the breaking property from a semiconductor wafer to a plurality of small semiconductor chips.

(3)

30% tensile stress at -5°C is 5.5N/10mm or more,

The dicing tape according to (1) or (2) above.

According to this configuration, since the 30% tensile stress at -5°C is 5.5N/10mm or more, the dicing tape is affixed to a semiconductor wafer, and the dicing tape is expanded under low temperature conditions to cut the semiconductor wafer into a plurality of semiconductor chips. In the case of performing, the dicing tape can be made to have a relatively large hardness even during expansion.

For this reason, while it becomes easy to cut the semiconductor wafer into a plurality of semiconductor chips, it becomes easier to obtain a semiconductor chip which is relatively uniformly cut.

That is, the cutting property of the semiconductor wafer can be further improved.

(4)

30% tensile stress at -5°C is 30N/10mm or less,

The dicing tape according to any one of the above (1) to (3).

According to this configuration, since the dicing tape is relatively easily elongated while applying sufficient tensile force to the entire dicing tape during expansion, the dicing tape affixed to the semiconductor wafer is expanded and the semiconductor While the wafer is divided into a plurality of semiconductor chips, tearing of the dicing tape due to expansion can be suppressed, and the cutting property from a semiconductor wafer to a plurality of semiconductor chips can be further improved.

In addition, when the 30% tensile stress at -5°C is 30 N/10 mm or less, in particular, it is possible to further improve the breaking property from a semiconductor wafer to a plurality of small semiconductor chips.

(5)

30% tensile stress at room temperature is 3.2N/10mm or more,

The dicing tape according to any one of (1) to (4) above.

According to this configuration, since the 30% tensile stress at room temperature is 3.2 N/10 mm or more, the dicing tape is affixed to a semiconductor wafer, and the dicing tape is expanded under low temperature conditions to cut the semiconductor wafer into a plurality of semiconductor chips. In a case, even during expansion, the cutting property of the semiconductor wafer can be further improved.

Further, it is possible to suppress the transition of the tensile stress generated in the dicing tape between the cut semiconductor chips to the semiconductor chip side.

Therefore, a relatively large force is applied to the outer peripheral portion of the semiconductor chip, so that the outer peripheral portion of the semiconductor chip can be relatively suppressed from floating from the surface of the dicing tape (chip lift).

(6)

30% tensile stress at room temperature is 30N/10mm or less,

The dicing tape according to any one of (1) to (5) above.

According to this configuration, since the dicing tape is relatively easily elongated while applying sufficient tensile force to the entire dicing tape during expansion, the dicing tape affixed to the semiconductor wafer is expanded and the semiconductor While the wafer is divided into a plurality of semiconductor chips, tearing of the dicing tape due to expansion can be suppressed, and the cutting property from a semiconductor wafer to a plurality of semiconductor chips can be further improved.

Further, by setting the 30% tensile stress at room temperature to 30 N/10 mm or less, in particular, it is possible to further improve the breaking property from a semiconductor wafer to a plurality of small semiconductor chips.

(7)

A ratio of 30% tensile stress at -5°C to 30% tensile stress at room temperature is 1.7 or more,

The dicing tape according to any one of (1) to (6) above.

According to this configuration, since the ratio of the 30% tensile stress at -5°C to the 30% tensile stress at room temperature is 1.7 or more, the dicing tape is affixed to a semiconductor wafer, and the dicing tape is expanded under a low temperature condition, from the semiconductor wafer. In the case of cutting into a plurality of semiconductor chips, even during expansion, the cutting property of the semiconductor wafer can be further improved.

Further, it is possible to relatively suppress the chip lift caused by the transition of the tensile stress generated in the dicing tape to the semiconductor chip side.

(8)

The ratio of 30% tensile stress at -5°C to 30% tensile stress at room temperature is 3.0 or less,

The dicing tape according to any one of the above (1) to (7).

According to this configuration, since the dicing tape is relatively easily elongated while applying sufficient tensile force to the entire dicing tape during expansion, the dicing tape affixed to the semiconductor wafer is expanded and the semiconductor While the wafer is divided into a plurality of semiconductor chips, tearing of the dicing tape due to expansion can be suppressed, and the cutting property from a semiconductor wafer to a plurality of semiconductor chips can be further improved.

In addition, since the ratio of the 30% tensile stress at -5°C to the 30% tensile stress at room temperature is 3.0 or less, in particular, it is possible to further improve the cleavability from a semiconductor wafer to a plurality of small semiconductor chips.

(9)

The base layer is formed in a three-layer structure having an elastomer layer as a center layer, and a non-elastomeric layer on both opposite sides of the center layer,

The dicing tape according to any one of (1) to (8) above.

According to this configuration, the elastomer layer can function as a stress relaxation layer that relieves tensile stress. That is, since the tensile stress generated in the substrate layer can be made relatively small, the substrate layer can be made to have an appropriate hardness and relatively easily elongated.

Thereby, it is possible to improve the cleavability from a semiconductor wafer to a plurality of semiconductor chips.

In addition, it is possible to suppress breakage of the base layer due to breakage during expansion in the cutting process.

(10)

A dicing tape in which an adhesive layer is laminated on the base layer,

It has a die-bonding layer laminated on the pressure-sensitive adhesive layer of the dicing tape,

Tensile storage modulus at -5°C is 100 MPa or more,

Dicing Die Bond Film.

According to this configuration, when affixing to a semiconductor wafer and expanding the dicing tape under low-temperature conditions (for example, -15°C to 5°C) to cut the semiconductor wafer into a plurality of semiconductor chips , At the start of expansion, a tensile force can be sufficiently applied to the entire dicing tape.

Thereby, in addition to being able to further improve the cutting property of the semiconductor wafer, the cutting property of the die bond layer can be improved.

In addition, the dicing tape and the dicing die-bonding film according to the present invention are not limited to the above embodiment. In addition, the dicing tape and the dicing die-bonding film according to the present invention are not limited by the above-described effects. The dicing tape and dicing die-bonding film according to the present invention can be variously changed without departing from the gist of the present invention.

[Example]

Next, the present invention will be described in more detail with reference to examples. The following examples are for describing the present invention in more detail, and do not limit the scope of the present invention.

[Example 1]

<Molding of the base layer>

A three-layer structure of layer A/B/C layer using a two-type three-layer extrusion T-die molding machine (three layers with layer B as the center layer and layer A and C layer on both sides of layer B Structure) was formed. Metallocene PP (trade name: Wintech WXK1233, manufactured by Nippon Polypro) was used for the resins of layer A and C, and EVA (trade name: Evaflex EV250, manufactured by Mitsui DuPont Polychemical) was used for the resin of layer B. .

The extrusion molding was performed at a die temperature of 190°C. That is, the A layer, the B layer and the C layer were extrusion molded at 190°C. The thickness of the substrate layer obtained by extrusion molding was 100 μm. In addition, the ratio of the thicknesses (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:10:1.

After sufficiently solidifying the molded base layer, the solidified base layer was wound up in a roll shape to obtain a roll body.

<Production of dicing tape>

A pressure-sensitive adhesive composition was applied from the roll-shaped base layer to one surface of the base layer using an applicator to a thickness of 10 μm. The substrate layer after application of the pressure-sensitive adhesive composition was heated and dried at 110° C. for 3 minutes to form a pressure-sensitive adhesive layer to obtain a dicing tape.

The pressure-sensitive adhesive composition was prepared as follows.

First, 173 parts by mass of INA (isononyl acrylate), 54.5 parts by mass of HEA (hydroxyethyl acrylate), 0.46 parts by mass of AIBN (2,2'-azobisisobutyronitrile), and 372 parts by mass of ethyl acetate were mixed. The 1st resin composition was obtained.

Subsequently, the first resin composition was added to the round bottom separable flask of the polymerization experiment apparatus equipped with a round bottom separable flask (capacity 1 L), a thermometer, a nitrogen introduction tube, and a stirring blade, and the first resin composition While stirring, the liquid temperature of the first resin composition was set to room temperature (23° C.), and the inside of the round bottom separable flask was purged with nitrogen for 6 hours.

In a state in which nitrogen was continuously introduced into the round bottom separable flask, while stirring the first resin composition, the liquid temperature of the first resin composition was maintained at 62° C. for 3 hours, and then maintained at 75° C. for 2 hours. , The INA, the HEA, and the AIBN were polymerized to obtain a second resin composition. Thereafter, the introduction of nitrogen into the round bottom separable flask was stopped.

After cooling the second resin composition until the liquid temperature reaches room temperature, as a compound having a polymerizable carbon-carbon double bond in the second resin composition, 2-isocyanatoethyl methacrylate (manufactured by Showa Denko , A third resin composition obtained by adding 52.5 parts by mass of the brand name "Carenz MOI (registered trademark)") and 0.26 parts by mass of dibutyltin dilaurate IV (manufactured by Wako Pure Chemical Industries, Ltd.) at a liquid temperature of 50°C at 24 Stirred for hours.

Subsequently, in the third resin composition, 0.75 parts by mass and 2 parts by mass of Coronate L (isocyanate compound) and Omnirad 127 (photopolymerization initiator) were added respectively to 100 parts by mass of the polymer solid content, and then ethyl acetate was used, The 3rd resin composition was diluted so that the solid content concentration might become 20 mass %, and the adhesive composition was prepared.

<Production of dicing die-bonding film>

100 parts by mass of acrylic resin (manufactured by Nagase Chemtex, brand name "SG-P3", glass transition temperature 12°C), 46 parts by mass of epoxy resin (manufactured by Mitsubishi Chemical Corporation, brand name "JER1001"), phenol resin (manufactured by Meiwa Kasei) , Brand name "MEH-7851ss") 51 parts by mass, spherical silica (made by Admatex, brand name “SO-25R”) 191 parts by mass and curing catalyst (made by Shikoku Kasei Kogyo, brand name “Curesol PHZ”) 0.6 parts by mass , Methyl ethyl ketone was added and mixed to obtain a die-bonding composition having a solid content concentration of 20% by mass.

Then, the die-bonding composition was applied to a thickness of 10 μm using an applicator on the silicone-treated surface of a PET-based separator (thickness 50 μm) as a release liner, dried at 130° C. for 2 minutes, and the die-bonding composition From the solvent removal, a die-bonding sheet in which a die-bonding layer was laminated on the release liner was obtained.

Next, after bonding the side of the die-bonding sheet to which the release sheet is not laminated on the pressure-sensitive adhesive layer of the dicing tape, the release liner is peeled from the die-bonding layer to form a die-bonding layer. The provided dicing die-bonding film was obtained.

For the dicing tape obtained as described above, the tensile storage modulus at -5°C and 30% tensile stress at -5°C and 23°C were measured as follows. Further, the floating of the chips from the dicing die-bonding film during expansion (hereinafter referred to as chip lift), and the slicing properties of the chips and die-bonding layers (hereinafter referred to as slicing properties) were evaluated.

(Tensile storage modulus at -5°C)

From the dicing tape according to Example 1, a test piece having a length of 40 mm (measurement length) x 10 mm in width was cut out, and a solid viscoelasticity measuring device (model RSAIII, manufactured by Rheometric Scientific Co., Ltd.) was used, with a frequency of 1 Hz and a deformation amount. The tensile storage modulus of the test piece was measured in a temperature range of -50 to 100°C under conditions of 0.1%, a heating rate of 10°C/min, and a chuck distance of 22.5 mm, and at that time, the value of the tensile modulus at -5°C By reading, the tensile storage modulus at -5°C was determined.

(30% tensile stress at -5°C and room temperature)

From the dicing tape according to Example 1, a test piece having a length of 100 mm x a width of 10 mm was cut out, and a tensile tester (Tensilon universal testing machine, manufactured by Shimadzu Corporation) was used, at a measurement temperature (-5°C and room temperature), between the chuck. Under the conditions of a distance of 50 mm and a tensile speed of 100 mm/min, the test piece was pulled and the stress when the elongation reached 30% (65 mm distance between chuck) was measured.

(Evaluation of chip lift)

A bare wafer (300 mm in diameter) and a dicing ring were affixed to the dicing die-bonding film according to Example 1. Next, the semiconductor wafer and the die-bonding layer were cleaved using the die separator DDS230 (manufactured by Disco Corporation), and chip lifting after cleaving was evaluated. The bare wafer was cut into bare chips having a length of 12 mm x a width of 4 mm x a thickness of 0.055 mm.

In addition, as a bare wafer, a warped wafer was used.

The warped wafer was produced as follows.

First, the following (a) to (f) were dissolved in methyl ethyl ketone to obtain a warpage adjusting composition having a solid content concentration of 20% by mass.

(a) Acrylic resin (manufactured by Nagase Chemtex, brand name "SG-70L"): 5 parts by mass

(b) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, brand name "JER828"): 5 parts by mass

(c) Phenol resin (made by Meiwa Kasei, brand name "LDR8210"): 14 parts by mass

(d) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, brand name "MEH-8005"): 2 parts by mass

(e) Spherical silica (manufactured by Admatex, brand name "SO-25R"): 53 parts by mass

(f) Phosphorus catalyst (TPP-K): 1 part by mass

Subsequently, the warpage control composition was applied to a silicone-treated side of a PET-based separator (thickness 50 μm), a release liner, to a thickness of 25 μm using an applicator, and dried at 130° C. for 2 minutes, from the warpage control composition. The solvent was removed to obtain a warpage control sheet in which a warp control layer was laminated on the release liner.

Then, on the side of the warpage adjustment sheet on which the release liner is not laminated, a bare wafer is affixed under conditions of 60°C, 0.1 MPa, and 10 mm/s using a laminator (manufactured by MCK, Model MRK-600). Then, it was put in an oven and heated at 175°C for 1 hour to thermally cure the resin in the warp control layer, whereby the warp control layer contracted to obtain a warped bare wafer.

After shrinking the warpage control layer, a wafer processing tape (manufactured by Nitto Denko Corporation, brand name ``V-12SR2'') is affixed to the side of the bent bare wafer on which the warp control layer is not laminated. A dicing ring was fixed to the bent bare wafer through the wafer processing tape. Thereafter, the warpage control layer was removed from the warped bare wafer.

Using a dicing device (manufactured by DISCO, Model No. 6361), a groove having a depth of 100 µm from this surface is formed over the entire surface (hereinafter referred to as one surface) of the bent bare wafer from which the warpage adjustment layer is removed. It was formed in a grid shape (20 μm in width).

Next, a backgrind tape was bonded to one side of the bent bare wafer, and the wafer processing tape was removed from the other side of the curved bare wafer (the side opposite to the one side).

Next, using a back grinder (manufactured by DISCO, Model DGP8760), the wafer obtained by grinding the bent bare wafer from the other side so that the thickness of the bent bare wafer becomes 55 µm (0.055 mm) was used as a warped wafer.

The chip lifting was evaluated in detail as follows.

First, with a cool expander unit, under the conditions of an expand temperature of -5°C, an expand speed of 100 mm/sec, and an expand amount of 12 mm, the bare wafer and the die bond layer were cut to obtain a semiconductor chip with a die bond layer.

Next, expansion was performed under the conditions of room temperature, an expand speed of 1 mm/sec, and an expand amount of 5 mm. Then, while maintaining the expanded state, the dicing die-bonding film at the boundary portion of the bare wafer was heat-shrunk under conditions of a heat temperature of 200°C, a heat distance of 18 mm, and a rotation speed of 5°/sec.

Next, about the surface of the substrate layer of the dicing die-bonding film, the lifted state of the semiconductor chip with the die-bonding layer was photographed by microscopic observation, and the lifted area was calculated by binarizing. And the case where the lifted area was less than 4% was evaluated as ○, and the case where it was 4% or more was evaluated as x.

(Evaluation of splitting property)

A bare wafer (300 mm in diameter) and a dicing ring were affixed to the dicing die-bonding film according to Example 1. Subsequently, the bare wafer and the die bond layer were cut using the die separator DDS230 (manufactured by Disco Corporation).

The bare wafer was cut into bare chips having a length of 3.2 mm x a width of 1.4 mm x a thickness of 0.025 mm.

The cleavage property was evaluated in detail as follows.

First, with a cool expander unit, a bare wafer and a die bond layer were cut under the conditions of an expand temperature of -5°C, an expand speed of 100 mm/sec, and an expand amount of 14 mm to obtain a semiconductor chip including a die bond layer.

Subsequently, expansion was performed under the conditions of room temperature, an expand speed of 1 mm/sec, and an expand amount of 10 mm. Then, while maintaining the expanded state, the dicing die-bonding film at the boundary portion of the bare wafer was heat-shrunk under conditions of a heat temperature of 200°C, a heat distance of 18 mm, and a rotation speed of 5°/sec.

Subsequently, the cut portion of the semiconductor chip with the die-bonding layer was observed by microscopic observation, and the cut rate was calculated. And the case where the cleaving rate was 90% or more was evaluated as ○, and the case where the cleaving rate was less than 90% was evaluated as x.

[Example 2]

A dicing tape and a dicing die-bonding film according to Example 2 were obtained in the same manner as in Example 1 except that the substrate layer was 80 µm.

Further, about the dicing tape according to Example 2, in the same manner as in Example 1, the tensile storage modulus at -5°C and 30% tensile stress at -5°C and 23°C were measured.

In addition, about the dicing die-bonding film according to Example 2, chip lift and severability were evaluated.

[Example 3]

In the same manner as in Example 1, except that EVA constituting the layer B (center layer) of the base layer was used as Evaflex EV550 (manufactured by Mitsui DuPont Polychemical) and the base layer was set to 80 µm, Dicing tape and dicing die bond film were obtained.

Further, about the dicing tape according to Example 3, in the same manner as in Example 1, the tensile storage modulus at -5°C and 30% tensile stress at -5°C and 23°C were measured.

In addition, about the dicing die-bonding film according to Example 3, chip lift and severability were evaluated.

[Example 4]

A dicing tape and a dicing die-bonding film according to Example 4 were obtained in the same manner as in Example 1, except that the resin of the B layer was used as a propylene elastomer (trade name: Vistamax 3980, manufactured by Exxon Mobil Chemical).

In addition, about the dicing tape according to Example 4, in the same manner as in Example 1, the tensile storage modulus at -5°C and 30% tensile stress at -5°C and 23°C were measured.

In addition, about the dicing die-bonding film according to Example 4, chip lift and severability were evaluated.

[Example 5]

Dicing according to Example 5 in the same manner as in Example 1, except that the thickness of the base layer was set to 80 µm and the layer thickness ratio of the base layer was set to A layer: B layer: C layer = 1:4: 1. Tape and dicing die bond films were obtained.

Further, about the dicing tape according to Example 5, in the same manner as in Example 1, the tensile storage modulus at -5°C and 30% tensile stress at -5°C and 23°C were measured.

In addition, about the dicing die-bonding film according to Example 5, chip lift and severability were evaluated.

[Example 6]

Dicing tape and dicing according to Example 6 in the same manner as in Example 1, except that the metallocene PP constituting the A layer and C layer (outer layer) of the base layer was used as Wintech WMX03 (manufactured by Nippon Polypro). A die bond film was obtained.

Further, about the dicing tape according to Example 6, in the same manner as in Example 1, the tensile storage modulus at -5°C and 30% tensile stress at -5°C and 23°C were measured.

In addition, about the dicing die-bonding film according to Example 6, chip lift and severability were evaluated.

[Example 7]

A dicing tape and a dicing die-bonding film according to Example 7 were obtained in the same manner as in Example 1, except that the EVA resin constituting the layer B of the base layer was used as Ultrasen 651 (manufactured by Tosoh Corporation).

In addition, about the dicing tape according to Example 7, in the same manner as in Example 1, the tensile storage modulus at -5°C and 30% tensile stress at -5°C and 23°C were measured.

In addition, about the dicing die-bonding film according to Example 7, chip lift and severability were evaluated.

[Example 8]

A dicing tape and a dicing die-bonding film according to Example 8 were obtained in the same manner as in Example 1, except that the base layer was made into a single layer structure and the thickness of the base layer was 125 µm.

The base material layer was molded using a single-layer extrusion T-die molding machine. As the resin for the base layer, a propylene elastomer (trade name: Vistamax 3980, manufactured by Exxon Mobil Chemical) was used.

In addition, about the dicing tape according to Example 8, in the same manner as in Example 1, the tensile storage modulus at -5°C and 30% tensile stress at -5°C and 23°C were measured.

In addition, about the dicing die-bonding film according to Example 8, chip lift and severability were evaluated.

[Example 9]

A dicing tape and a dicing die-bonding film according to Example 9 were obtained in the same manner as in Example 8 except that the thickness of the base layer was set to 100 µm.

Further, about the dicing tape according to Example 9, in the same manner as in Example 1, the tensile storage modulus at -5°C and 30% tensile stress at -5°C and 23°C were measured.

In addition, about the dicing die-bonding film according to Example 9, chip lifting and cutting properties were evaluated.

[Comparative Example 1]

A dicing tape and a dicing die-bonding film according to Comparative Example 1 were obtained in the same manner as in Example 8, except that the resin of the base layer was made Evaflex EV250 (manufactured by Mitsui DuPont Polychemical).

Further, about the dicing tape according to Comparative Example 1, in the same manner as in Example 1, the tensile storage modulus at -5°C and 30% tensile stress at -5°C and 23°C were measured.

In addition, about the dicing die-bonding film according to Comparative Example 1, chip lift and severability were evaluated.

[Comparative Example 2]

A dicing tape and a dicing die-bonding film according to Comparative Example 2 were obtained in the same manner as in Comparative Example 1 except that the thickness of the substrate layer was set to 100 µm.

Further, about the dicing tape according to Comparative Example 2, in the same manner as in Example 1, the tensile storage modulus at -5°C and 30% tensile stress at -5°C and 23°C were measured.

In addition, about the dicing die-bonding film according to Comparative Example 2, chip lift and severability were evaluated.

For the dicing tapes for each example, with the results of measuring the tensile storage modulus at -5°C and the tensile stress at -5°C and 23°C, with respect to the dicing die-bonding film for each example, chip lifting And the results of evaluating the cleavage properties are shown in Table 1 below.

From Table 1, the dicing tapes according to Examples 1 to 9 all have a tensile storage modulus of 100 MPa or more at -5°C, and the dicing die-bonding films according to Examples 1 to 9 It can be seen that the property is excellent.

In addition, from Table 1, the dicing tapes according to Examples 1 to 7, that is, the dicing die-bonding films according to Examples 1 to 7 provided with a dicing tape having a three-layer structure of the base layer, are all chip It can be seen that lifting can be suppressed.

In contrast, the dicing tapes according to Comparative Examples 1 and 2 all had a tensile storage modulus value of less than 100 MPa at -5°C, and the dicing die-bonding films according to Comparative Examples 1 and 2 were It can be seen that, along with this fall, chip lift cannot be suppressed.

In addition, although the result shown in Table 1 relates to a dicing die-bonding film, also in the dicing tape contained in a dicing die-bonding film, the same result as shown in Table 1 is expected to be obtained.

1: base layer
2: adhesive layer
3: die bond layer
10: dicing tape
20: dicing die bond film
1a: first resin layer
1b: second resin layer
1c: third resin layer
G: Back Grind Tape
H: maintenance tool
J: adsorption jig
P: pin member
R: dicing ring
T: Wafer processing tape
U: push-up member
W: semiconductor wafer

Claims (7)

It is a dicing tape in which an adhesive layer is laminated on a base layer,
Tensile storage modulus at -5℃ is more than 100MPa
Dicing tape. The method of claim 1, wherein the 30% tensile stress at -5°C is 5.5N/10mm or more.
Dicing tape. The method according to claim 1 or 2, wherein the 30% tensile stress at room temperature is 3.2 N/10 mm or more.
Dicing tape. The method of claim 1, wherein the ratio of 30% tensile stress at -5°C to 30% tensile stress at room temperature is 1.7 or more.
Dicing tape. The method of claim 2, wherein the ratio of the 30% tensile stress at -5°C to the 30% tensile stress at room temperature is 1.7 or more.
Dicing tape. The method of claim 3, wherein the ratio of 30% tensile stress at -5°C to 30% tensile stress at room temperature is 1.7 or more.
Dicing tape. A dicing tape in which an adhesive layer is laminated on a base layer,
And a die bond layer laminated on the pressure-sensitive adhesive layer of the dicing tape,
Tensile storage modulus at -5℃ is more than 100MPa
Dicing Die Bond Film.

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