JP6983200B2 - Die bond film and dicing die bond film - Google Patents

Description

The present invention relates to a die bond film and a dicing die bond film.

Conventionally, it has been known to use a dicing die bond film in order to obtain a semiconductor chip for die bonding in the manufacture of a semiconductor device.
The dicing die bond film includes a dicing tape in which a pressure-sensitive adhesive layer is laminated on a base material layer, and a dicing tape in which a pressure-sensitive adhesive layer is releasably laminated on the pressure-sensitive adhesive layer of the dicing tape (for example, a patent). Document 1).

As a method of obtaining a semiconductor chip (die) for die bonding using the dying die bond film, a groove is formed in the semiconductor wafer to be processed into a chip (die) by a cutting process, and the semiconductor wafer is further ground. A half-cut process to reduce the thickness, and a mounting process in which one surface of the semiconductor wafer after the half-cut process (for example, the surface opposite to the circuit surface) is attached to the die bond layer and the semiconductor wafer is fixed to the dicing tape. , An expanding process that widens the distance between semiconductor chips that have been half-cut, a calf maintenance process that maintains the distance between semiconductor chips, and a state in which the die bond layer is attached by peeling between the die bond layer and the pressure-sensitive adhesive layer. It is known to adopt a method having a pickup step of taking out a semiconductor chip and a die bond step of adhering a semiconductor chip with a die bond layer to an adherend (for example, a mounting substrate or the like).
The semiconductor chips for die bonding obtained as described above are laminated under heating conditions (for example, 120 ° C.).

Japanese Unexamined Patent Publication No. 2015-185591

The split semiconductor chips for die bonding (also referred to as semiconductor chips with a die bond layer) are laminated under heating conditions, for example, by shifting them in the same direction by a predetermined distance in a stepped manner. The die bond layer may peel off from the surface of the semiconductor chip.

By the way, in the method for obtaining a semiconductor chip for die bonding as described above, a semiconductor wafer having a relatively flat surface in cross-sectional view is usually used. Although it often has a relatively flat surface, a semiconductor chip for die bonding having a surface having a plurality of bent points in a cross-sectional view (for example, a wavy surface in a cross-sectional view) may be obtained.
The peeling of the die bond layer from the surface of the semiconductor chip at the time of laminating described above becomes more remarkable in the semiconductor chip for die bonding having a surface having a plurality of bent portions in a cross-sectional view.

Therefore, it is an object of the present invention to provide a dicing die bond film in which the die bond layer is relatively hard to peel off from the surface of the semiconductor chip when laminated under heating conditions, and a dicing die bond film in which the die bond layer is composed of the die bond film. ..

As a result of diligent studies by the present inventors, by setting the die bond layer to have a shear loss elastic modulus of 0.03 MPa or more and 0.09 MPa or less at 120 ° C., the surface of the semiconductor chip is surfaced when laminated under heating conditions. From this, it was found that the die bond film is relatively difficult to peel off, and the present invention was conceived.

That is, the die bond film according to the present invention is
The elastic modulus of shear loss at 120 ° C. is 0.03 MPa or more and 0.09 MPa or less.

According to such a configuration, since the shear modulus of the die bond film at 120 ° C. is 0.03 MPa or more, when the semiconductor chips with the die bond layer (die bond film) are laminated under heating conditions (for example, 120 ° C.). , The die bond layer can be made to have an appropriate hardness.
Further, since the shear loss elastic modulus of the die bond film at 120 ° C. is 0.09 MPa or less, when the semiconductor chip with the die bond layer (die bond film) is laminated under heating conditions (for example, 120 ° C.), it is combined with the adherend. The wettability of the film can be made relatively good.
As described above, the die-bonded film can be made relatively difficult to peel off from the surface of the semiconductor chip during lamination under heating conditions.

In the die bond film,
The shear modulus at 180 ° C. is preferably 0.01 MPa or more and 0.05 MPa or less.

Generally, a laminated semiconductor chip with a die bond layer (die bond film) is molded (sealed) under heating conditions (for example, 180 ° C.), but according to such a configuration, the die bond film at 180 ° C. Since the shear loss elastic modulus is 0.01 MPa or more, the die bond film should have an appropriate hardness even when the semiconductor chip with a laminated die bond layer (die bond film) is molded under heating conditions. Can be done.
Further, since the shear loss elastic modulus of the die bond film at 180 ° C. is 0.05 MPa or less, the wettability with the adherend is relatively low even when the semiconductor chip with the laminated die bond layer (die bond film) is molded. It can be good.
According to the above, the die bond film can be made relatively difficult to peel off from the surface of the semiconductor chip even at the time of molding in addition to the time of laminating under heating conditions.

In the die bond film,
The ratio of the shear loss elastic modulus of the die bond film at 180 ° C. to the shear loss elastic modulus of the die bond film at 120 ° C. is preferably 0.5 or more and 0.8 or less.

According to such a configuration, the ratio of the shear loss elastic modulus of the diebond film at 120 ° C. to the shear loss elastic modulus of the diebond film at 180 ° C. is 0.5 or more and 0.8 or less. In addition to laminating under heating conditions, it can be made even more difficult to peel off from the surface of the semiconductor chip during molding.

In the die bond film,
The shear adhesive force with respect to the bare wafer at 120 ° C. is 0.1 MPa or more and 0.4 MPa or less.
The shear adhesive force with respect to the bare wafer at 180 ° C. is preferably 0.05 MPa or more and 0.3 MPa or less.

According to such a configuration, the die bond film can be made more difficult to peel off from the surface of the semiconductor chip even at the time of molding in addition to the time of laminating under heating conditions.

In the die bond film,
It is preferable that the elastic modulus by dynamic viscoelasticity measurement at room temperature at 900 Hz is 1 GPa or more and less than 3 GPa.

According to such a configuration, when the semiconductor chip laminated on the substrate via the die bond layer (die bond film) is conveyed to the mold resin molding apparatus in an environment of room temperature (23 ° C.), the die bond film is transferred to the semiconductor chip. It can be made relatively difficult to peel off from the surface of the.

In the die bond film,
Has thermosetting properties
It is preferable that the hygroscopicity after being cured at 175 ° C. for 1 hour and exposed to an environment at 135 ° C. and a relative humidity of 85% RH for 100 hours is 1% by mass or less.

According to such a configuration, the die bond film is relatively hard to be peeled off from the surface of the semiconductor chip even when exposed to a high temperature and high humidity environment (so-called HAST (Highly Accelerated Temperature and Humidity Stress) environment). be able to.

In the die bond film,
Has thermosetting properties
The tensile storage elastic modulus at 130 ° C. after curing at 175 ° C. for 1 hour is preferably 0.2 MPa or more and 1.0 MPa or less.

According to such a configuration, the die bond film can be made more difficult to peel off from the surface of the semiconductor chip even at the time of molding in addition to the time of laminating under heating conditions.

In the die bond film,
Has thermosetting properties
After being cured at 175 ° C. for 5 hours and exposed to an environment of 135 ° C. and a relative humidity of 85% RH for 100 hours, the shear adhesive force to the bare wafer is 15 MPa or more.
Cure at 175 ° C for 5 hours to 135 ° C and 85% relative humidity RH for shear adhesion to bare wafers before exposure to 175 ° C for 5 hours to 135 ° C and 85% RH relative humidity The ratio of the shear adhesive force to the bare wafer after exposure for 100 hours is preferably 0.6 or more.

According to such a configuration, the die bond film can be made relatively difficult to peel off from the surface of the semiconductor chip even when exposed to a high temperature and high humidity environment.

The dicing die bond film according to the present invention is
A dicing tape in which an adhesive layer is laminated on a base material layer,
A dicing bond layer laminated on the adhesive layer of the dicing tape is provided.
The die bond layer is made of any of the above die bond films.

According to such a configuration, the dicing die bond film of the dicing die bond film can be made relatively difficult to peel off from the surface of the semiconductor chip when laminated under heating conditions.

According to the present invention, it is possible to provide a dicing die bond film in which the die bond film is relatively hard to peel off from the surface of the semiconductor chip when laminated under heating conditions, and a dicing die bond film in which the die bond layer is composed of the die bond film.

The cross-sectional view which shows the structure of the dicing die bond film which concerns on one Embodiment of this invention. The cross-sectional view which shows the state of the half-cut processing in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the half-cut process in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the half-cut process in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the half-cut process in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the mounting process in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the mounting process in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the expansion process at a low temperature in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the expansion process at a low temperature in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the expansion process at a low temperature in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the expansion process at room temperature in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the expansion process at room temperature in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the calf maintenance process in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the pickup process in the manufacturing method of a semiconductor integrated circuit schematically.

Hereinafter, an embodiment of the present invention will be described.

[Die bond film]
The die bond film according to this embodiment has a shear modulus of 0.03 MPa or more and 0.09 MPa or less at 120 ° C.
The die bond film according to this embodiment is used for laminating a plurality of semiconductor chips.
The lamination of a plurality of semiconductor chips by the die bond film is usually performed at 120 ° C., and the plurality of semiconductor chips laminated by the die bond film are usually resin-sealed (molded) at 180 ° C. .. That is, the die bond film is usually exposed to a temperature of 120 ° C. when laminating a plurality of semiconductor chips, and is exposed to a temperature of 180 ° C. during resin sealing (mold molding).

The elastic modulus of shear loss at 120 ° C. is that when one circular surface of a die-bonded film punched into a cylinder of Φ7.5 mm × 1 mm is subjected to shear vibration at a temperature of 120 ° C. and a frequency of 1 Hz, the other is circular. It can be obtained by measuring the shear vibration transmitted to the surface and analyzing the measured value.
The measurement of the shear loss elastic modulus and the analysis of the measured values can be performed using a viscoelasticity measuring device (for example, manufactured by Rheometric Scientific, model ARES).

The die bond film according to this embodiment preferably has a shear modulus of 0.01 MPa or more and 0.05 MPa or less at 180 ° C.
The elastic modulus of shear loss at 180 ° C. can be measured in the same manner as described above except that the temperature is 180 ° C.

In the die bond film according to the present embodiment, the ratio of the shear loss elastic modulus at 180 ° C. to the shear loss elastic modulus at 120 ° C. is preferably 0.5 or more and 0.8 or less.

The die bond film preferably has a shear adhesive force of 0.1 MPa or more and 0.4 MPa or less at 120 ° C. with respect to the bare wafer, and a shear adhesive force of 0.05 MPa or more and 0.3 MPa or less with respect to the bare wafer at 180 ° C.
The shear bonding force at 120 ° C. was such that the die bond layer was attached to a bare chip (bare wafer cut) having a thickness of 0.5 mm and 3 mm × 3 mm under the conditions of a temperature of 120 ° C., a speed of 10 mm / s, and a pressure of 0.15 MPa. The test piece can be measured by using a shear tester (Dage 4000, manufactured by Dage) and adopting the conditions of a measurement speed of 500 μm / s, a measurement gap of 100 μm, and a stage temperature of 120 ° C. for the test piece. The above measurement is performed about 20 seconds after the sample is placed on the measurement stage.
The shear adhesive force at 180 ° C. can be measured in the same manner as above except that the stage temperature is 180 ° C.

The die bond film preferably has an elastic modulus of 1 GPa or more and less than 3 GPa as measured by dynamic viscoelasticity at room temperature (23 ° C.) at 900 Hz.
The elastic modulus before curing by dynamic viscoelasticity measurement at room temperature at 900 Hz uses a dynamic viscoelastic device (Rheology-E4000, manufactured by Rheology) to raise the die bond layer before curing in the automatic static load mode. It can be obtained by measuring from −50 ° C. to 100 ° C. under the condition of a temperature rate of 5 ° C./min.

The die bond film is preferably thermosetting. By including at least one of a thermosetting resin and a thermoplastic resin having a thermosetting functional group in the die bond film, the die bond film can be imparted with thermosetting property.

When the die bond film has thermosetting property, the die bond film has a moisture absorption rate of 1% by mass or less after being cured at 175 ° C. for 1 hour and exposed to an environment at 135 ° C. and a relative humidity of 85% RH for 100 hours. Is preferable.
The hygroscopicity is 100 before being cured at 175 ° C. for 1 hour and exposed to an environment of 135 ° C. and a relative humidity of 85% RH, and after being cured at 175 ° C. for 1 hour and being cured at 135 ° C. and a relative humidity of 85% RH. It can be calculated by obtaining the mass change after time exposure.

When the die bond film has thermosetting property, the die bond film preferably has a tensile storage elastic modulus of 0.2 MPa or more and 1.0 MPa or less at 130 ° C. after being cured at 175 ° C. for 1 hour.
The tensile storage elastic modulus at 130 ° C. after curing at 175 ° C. for 1 hour is measured using a solid viscoelasticity measuring device (for example, model RSAIII, manufactured by Leometric Scientific Co., Ltd.).
Specifically, a test piece having a length of 40 mm (measurement length) and a width of 10 mm is cut out from the die bond layer after being cured at 175 ° C. for 1 hour, and a solid viscoelasticity measuring device (for example, model RSAIII, rheometric scientist) is cut out. The tensile storage elastic modulus of the test piece is measured in the temperature range of -30 to 280 ° C. under the conditions of a frequency of 1 Hz, a heating rate of 10 ° C./min, and a chuck-to-chuck distance of 22.5 mm using FIC Co., Ltd.). .. At that time, it can be obtained by reading the value at 130 ° C.

If the die-bonded film is thermally curable, the die-bonded film has a shear adhesion of 15 MPa or more to the bare wafer after being cured at 175 ° C. for 5 hours and exposed to an environment at 135 ° C. and a relative humidity of 85% RH for 100 hours. Yes, the shear adhesion to the bare wafer before being cured at 175 ° C for 5 hours at 135 ° C and 85% RH relative to the shear adhesion at 175 ° C for 5 hours at 135 ° C and 85% RH relative humidity. The ratio of the shear adhesive force to the bare wafer after 100 hours of exposure to the environment is preferably 0.6 or more.
Further, the die bond film is preferably cured at 175 ° C. for 5 hours and exposed to an environment at 135 ° C. and a relative humidity of 85% RH, and then the shear adhesive force to the bare wafer is preferably 50 MPa or less.

After being cured at 175 ° C. for 5 hours and exposed to an environment of 135 ° C. and a relative humidity of 85% RH for 100 hours, the shear adhesion to the bare wafer was 5 at 175 ° C. with a die bond film attached to the bare wafer under the above conditions. The test piece was cured for 100 hours and exposed to an environment of 135 ° C. and a relative humidity of 85% RH for 100 hours. It can be measured by adopting the conditions of a measurement gap of 100 μm and a stage temperature of 23 ° C. The above measurement is performed about 20 seconds after the sample is placed on the measurement stage.
Further, the shearing adhesive force to the bare wafer before being cured at 175 ° C. for 5 hours and exposed to an environment of 135 ° C. and a relative humidity of 85% RH for 100 hours was obtained by attaching a die bond film to the bare wafer under the above conditions and at 175 ° C. The measurement can be carried out in the same manner as described above except that the test piece is cured for 5 hours.

When the die bond film contains a thermosetting resin, examples of such a thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. .. As the thermosetting resin, only one kind may be used, or two or more kinds may be used in combination. Epoxy resin is preferable as the thermosetting resin from the viewpoint that the content of ionic impurities and the like that cause corrosion of the semiconductor chip as an adherend tends to be small. Further, as the curing agent for the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type and ortho. Examples thereof include cresol novolak type, trishydroxyphenylmethane type, tetraphenylol ethane type, hydantin type, trishydroxyphenylmethane type, glycidylamine type epoxy resin and the like. Among them, novolak type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylol ethane type epoxy resin are highly reactive with phenol resin as a curing agent and have excellent heat resistance. preferable.

Examples of the phenol resin that can act as a curing agent for the epoxy resin include novolak-type phenol resin, resol-type phenol resin, and polyoxystyrene such as polyparaoxystyrene. Examples of the novolak type phenol resin include phenol novolac resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, nonylphenol novolak resin and the like. As the above-mentioned phenol resin, only one kind may be used, or two or more kinds may be used in combination. Among them, phenol novolac resin and phenol aralkyl resin are preferable from the viewpoint that when they are used as a curing agent for an epoxy resin as an adhesive for die bonding, the connection reliability of the adhesive tends to be improved.

When the die bond film contains an epoxy resin and a phenol resin as a curing agent for the epoxy resin, the phenol resin has an epoxy group 1 in the epoxy resin from the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin. It is preferable that the hydroxyl group in the phenol resin is contained in an amount of 0.5 equivalent or more and 2.0 equivalent or less, and more preferably 0.7 equivalent or more and 1.5 equivalent or less. ..

The content ratio of the thermosetting resin in the die bond film is 5% by mass or more and 60% by mass with respect to the total mass of the die bond film from the viewpoint of appropriately exhibiting the function as the thermosetting adhesive in the die bond film. It is preferably 10% by mass or more and 50% by mass or less.

When the die bond film contains a thermoplastic resin having a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as such a thermoplastic resin. The thermosetting functional group-containing acrylic resin is preferably a polymer containing a monomer unit derived from a (meth) acrylic acid ester as the monomer unit having the largest mass ratio.
Examples of the (meth) acrylic acid ester include (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester.
Examples of the thermosetting functional group include a glycidyl group, a carboxy group, a hydroxy group, an isocyanate group and the like. Of these, a glycidyl group and a carboxy group are preferable.
That is, as the thermosetting functional group-containing acrylic resin, a glycidyl-containing acrylic resin and a carboxy group-containing acrylic resin are particularly preferable.
When the die bond layer contains a thermosetting functional group-containing acrylic resin, it preferably contains a curing agent. Examples of the curing agent include polyphenol compounds.

The die bond film may contain a thermoplastic resin in addition to the thermosetting resin. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, and polycarbonate resin. Examples thereof include thermoplastic polyimide resins, polyamide resins such as polyamide 6 and polyamides 6 and 6, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluororesins. As the thermoplastic resin, only one kind may be used, or two or more kinds may be used in combination. As the thermoplastic resin, an acrylic resin is preferable from the viewpoint that the number of ionic impurities is small and the heat resistance is high, so that the connection reliability by the die bond layer can be easily ensured.

The acrylic resin is preferably a polymer containing a monomer unit derived from (meth) acrylic acid ester as the monomer unit having the largest mass ratio. Examples of the (meth) acrylic acid ester include (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester. The acrylic resin may contain a monomer unit derived from another component copolymerizable with the (meth) acrylic acid ester. Examples of the other components include functional groups such as a carboxy group-containing monomer, an acid anhydride monomer, a hydroxy group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide, and acrylic nitrile. Examples thereof include monomers and various polyfunctional monomers. From the viewpoint of achieving high cohesive force in the die bond layer, the acrylic resin is composed of a (meth) acrylic acid ester (particularly, a (meth) acrylic acid alkyl ester having an alkyl group having 4 or less carbon atoms) and a carboxy group-containing monomer. It is preferable that the polymer is a copolymer of a nitrogen atom-containing monomer and a polyfunctional monomer (particularly, a polyglycidyl-based polyfunctional monomer), and ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile, and the like. More preferably, it is a copolymer with polyglycidyl (meth) acrylate.

When the die bond film contains the thermoplastic resin in addition to the thermosetting resin, the content ratio of the thermoplastic resin is the organic component excluding the filler in the die bond film (for example, thermosetting resin, thermoplastic resin, curing). It is preferably 30% by mass or more and 70% by mass or less, more preferably 40% by mass or more and 60% by mass or less, and 45% by mass or more and 55% by mass or less, based on the total mass of the catalyst, the silane coupling agent, and the dye). It is more preferably mass% or less.

The die bond film preferably contains a filler. By including the filler, various physical properties such as conductivity, thermal conductivity, and elastic modulus can be adjusted. Examples of the filler include an inorganic filler and an organic filler, and an inorganic filler is particularly preferable. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, and crystals. In addition to quality silica and amorphous silica, simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon black, graphite and the like can be mentioned. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. The filler may be used alone or in combination of two or more.

The average particle size of the filler is preferably 0.005 μm or more and 10 μm or less, and more preferably 0.05 μm or more and 1 μm or less. When the average particle size is 0.005 μm or more, the wettability and adhesiveness to an adherend such as a semiconductor chip can be improved. When the average particle size is 10 μm or less, heat resistance can be ensured. The average particle size of the filler can be determined using, for example, a luminous intensity type particle size distribution meter (for example, trade name “LA-910”, manufactured by HORIBA, Ltd.).

When the die bond film contains a filler, the content ratio of the filler is preferably 30% by mass or more and 70% by mass or less, and 40% by mass or more and 60% by mass or less, based on the total mass of the die bond film. It is more preferably 42% by mass or more and 55% by mass or less.

The die bond film may contain other components other than the above, if necessary. Examples of the components other than the above include a curing catalyst, a flame retardant, a silane coupling agent, an ion trapping agent, a dye and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin and the like. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, benzotriazole and the like. As the above other components, only one kind may be used, or two or more kinds may be used in combination.

The thickness of the die bond film (total thickness in the case of a laminated body) is not particularly limited, but is, for example, 1 μm or more and 200 μm or less. The upper limit of the thickness is preferably 100 μm, more preferably 80 μm. The lower limit of the thickness is preferably 3 μm, more preferably 5 μm.
The thickness of the die bond layer is determined by, for example, using a dial gauge (manufactured by PEACOCK, model R-205), measuring the thickness of five randomly selected points, and arithmetically averaging these thicknesses. Can be done.

The glass transition temperature (Tg) of the die-bonded film is preferably 0 ° C. or higher, and more preferably 10 ° C. or higher. When the glass transition temperature is 0 ° C. or higher, the die bond film can be relatively easily cut at a low temperature (for example, −15 ° C. to 5 ° C.). The upper limit of the glass transition temperature of the die bond film is, for example, 100 ° C.

Examples of the die-bonded film include those made of a single-layer die-bonded film.
In addition, in this specification, a single layer means a layer having the same composition, and includes the structure in which a plurality of layers having the same composition are laminated.
The die bond film is not limited to a single layer, and may have a multilayer structure in which two or more layers having different compositions are laminated.

[Dicing die bond film]
Next, the dicing die bond film 20 according to the present embodiment will be described with reference to FIG.

As shown in FIG. 1, the dicing die bond film 20 according to the present embodiment is laminated on the dicing tape 10 in which the adhesive layer 2 is laminated on the base material layer 1 and on the adhesive layer 2 of the dicing tape 10. The die bond layer 3 is provided.
The dicing layer 3 of the dicing die bond film 20 according to the present embodiment is composed of the die bond film according to the above embodiment.
In the dicing die bond film 20, a semiconductor wafer is attached on the die bond layer 3.
In the cutting of the semiconductor wafer using the dicing die bond film 20, the die bond layer 3 is also cut together with the semiconductor wafer. The die bond layer 3 is divided into a size corresponding to the size of a plurality of semiconductor chips that have been fragmented. As a result, a semiconductor chip with the die bond layer 3 can be obtained.

The base material layer 1 supports the pressure-sensitive adhesive layer 2. The base material layer 1 contains a resin. The resin contained in the base material layer 1 includes polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyetherimide, polyamide, total aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylsulfide, and fluorine. Examples thereof include resins, cellulose-based resins, and silicone resins.

Examples of the polyolefin include homopolymers of α-olefins, copolymers of two or more kinds of α-olefins, block polypropylenes, random polypropylenes, and the co-weight of one or more kinds of α-olefins and other vinyl monomers. Coalescence and the like can be mentioned.

The α-olefin homopolymer is preferably an α-olefin homopolymer having 2 or more and 12 or less carbon atoms. Examples of such homopolymers include ethylene, propylene, 1-butene, 4-methyl-1-pentene and the like.

Examples of the polymer of two or more kinds of α-olefins include an ethylene / propylene copolymer, an ethylene / 1-butene copolymer, an ethylene / propylene / 1-butene copolymer, and an ethylene / carbon number of 5 or more and 12 or less. Examples thereof include α-olefin copolymers, propylene / ethylene copolymers, propylene / 1-butene copolymers, and α-olefin copolymers having propylene / carbon number of 5 or more and 12 or less.

Examples of the copolymer of one or more kinds of α-olefins and other vinyl monomers include ethylene-vinyl acetate copolymer (EVA).

The polyolefin may be what is called an α-olefin-based thermoplastic elastomer. Examples of the α-olefin-based thermoplastic elastomer include a combination of a propylene / ethylene copolymer and a propylene homopolymer, or an α-olefin ternary copolymer having propylene / ethylene / carbon number 4 or more.
Examples of commercially available α-olefin-based thermoplastic elastomers include Vistamax 3980 (manufactured by ExxonMobil Chemical Co., Ltd.), which is a propylene-based elastomer resin.

The base material layer 1 may contain one kind of the above-mentioned resin, or may contain two or more kinds of the above-mentioned resin.
When the pressure-sensitive adhesive layer 2 contains an ultraviolet-curable pressure-sensitive adhesive described later, it is preferable that the base material layer 1 is configured to have ultraviolet transparency.

The base material layer 1 may have a single layer structure or a laminated structure. The base material layer 1 may be obtained by non-stretch molding or by stretch molding, but it is preferably obtained by stretch molding. When the base material layer 1 has a laminated structure, it is preferable that the base material layer 1 has a layer containing an elastomer (hereinafter referred to as an elastomer layer) and a layer containing a non-elastomer (hereinafter referred to as a non-elastomer layer).
By having the base material layer 1 having an elastomer layer and a non-elastomer layer, the elastomer layer can function as a stress relaxation layer for relaxing tensile stress. That is, since the tensile stress generated in the base material layer 1 can be made relatively small, the base material layer 1 can be made relatively easy to stretch while having an appropriate hardness.
This makes it possible to improve the splittability from the semiconductor wafer to the plurality of semiconductor chips.
In addition, it is possible to prevent the base material layer 1 from being torn and damaged during cutting in the expanding step.
In the present specification, the elastomer layer means a low elastic modulus layer having a lower tensile storage elastic modulus at room temperature than a non-elastomer layer. Examples of the elastomer layer include those having a tensile storage elastic modulus of 10 MPa or more and 100 MPa or less at room temperature, and examples of the non-elastomer layer include those having a tensile storage elastic modulus of 200 MPa or more and 500 MPa or less at room temperature.

The elastomer layer may contain one type of elastomer or may contain two or more types of elastomers, but preferably contains an α-olefin-based thermoplastic elastomer.
The non-elastomer layer may contain one type of non-elastomer or may contain two or more types of non-elastomer, but preferably contains metallocene PP, which will be described later.
When the base material layer 1 has an elastomer layer and a non-elastomer layer, the base material layer 1 has a three-layer structure (non-elastomer layer) having an elastomer layer as a central layer and having non-elastomer layers on both sides of the central layer facing each other. / Elastomer layer / Non-elastomer layer) is preferably formed.

Further, as described above, in the calf maintenance step, hot air (for example, 100 to 130 ° C.) is applied to the dicing die bond film maintained in an expanded state at room temperature (for example, 23 ° C.) to heat-shrink the dicing die bond film. After that, in order to cool and solidify, the outermost layer of the base material layer 1 preferably contains a resin having a melting point close to the temperature of the hot air applied to the dicing tape. As a result, the outermost layer melted by applying hot air can be solidified more quickly.
As a result, the calf can be more sufficiently maintained in the calf maintenance step.

When the base material layer 1 has a laminated structure of an elastomer layer and a non-elastomer layer, the elastomer layer contains an α-olefin thermoplastic elastomer, and the non-elastomer layer contains a polyolefin such as metallocene PP described later, the elastomer layer. Contains 50% by mass or more and 100% by mass or less, and 70% by mass or more and 100% by mass or less of the α-olefin thermoplastic elastomer with respect to the total mass of the elastomer forming the elastomer layer. It is more preferably 80% by mass or more and 100% by mass or less, particularly preferably 90% by mass or more and 100% by mass or less, and 95% by mass or more and 100% by mass or less. Optimal. Since the α-olefin-based thermoplastic elastomer is contained in the above range, the affinity between the elastomer layer and the non-elastomer layer is increased, so that the base material layer 1 can be extruded relatively easily. Further, since the elastomer layer can act as a stress relaxation layer, the semiconductor wafer attached to the die bond layer 3 and the die bond layer 3 can be efficiently cut.

When the base material layer 1 has a laminated structure of an elastomer layer and a non-elastomer layer, the base material layer 1 is coextruded to form a laminated structure of an elastomer layer and a non-elastomer layer by coextruding an elastomer and a non-elastomer. It is preferable that it is obtained by. As the coextrusion molding, any suitable coextrusion molding generally performed in the production of films, sheets and the like can be adopted. Among the coextrusion moldings, it is preferable to adopt the inflation method or the coextrusion T-die method from the viewpoint that the base material layer 1 can be obtained efficiently and inexpensively.

When the base material layer 1 having a laminated structure is obtained by coextrusion molding, the elastomer layer and the non-elastomer layer are in contact with each other in a heated and melted state, so that the melting point difference between the elastomer and the non-elastomer is smaller. preferable. Since the small difference in melting point suppresses excessive heat from being applied to either the elastomer or the non-elastomer having a low melting point, either the elastomer or the non-elastomer having a low melting point is thermally deteriorated. By doing so, it is possible to suppress the production of by-products. Further, it is possible to suppress the occurrence of poor lamination between the elastomer layer and the non-elastomer layer due to an excessive decrease in the viscosity of either the elastomer or the non-elastomer having a low melting point. The melting point difference between the elastomer and the non-elastomer is preferably 0 ° C. or higher and 70 ° C. or lower, and more preferably 0 ° C. or higher and 55 ° C. or lower.
The melting points of the elastomer and the non-elastomer can be measured by differential scanning calorimetry (DSC) analysis. For example, by using a differential scanning calorimeter (TA Instruments Co., Ltd., model DSC Q2000), the temperature is raised to 200 ° C. at a heating rate of 5 ° C./min under a nitrogen gas stream, and the peak temperature of the endothermic peak is obtained. Can be measured.

The thickness of the base material layer 1 is preferably 55 μm or more and 195 μm or less, more preferably 55 μm or more and 190 μm or less, further preferably 55 μm or more and 170 μm or less, and most preferably 60 μm or more and 160 μm or less. Is. By setting the thickness of the base material layer 1 within the above range, the dicing tape can be efficiently manufactured, and the semiconductor wafer attached to the die bond layer 3 and the die bond layer 3 can be efficiently cut. ..
The thickness of the base material layer 1 is determined by measuring the thickness of five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and arithmetically averaging these thicknesses. Can be asked.

In the base material layer 1 in which the elastomer layer and the non-elastomer layer are laminated, the ratio of the thickness of the non-elastomer layer to the thickness of the elastomer layer is preferably 1/25 or more and 1/3 or less, preferably 1/25. It is more preferably 1 / 3.5 or less, further preferably 1/25 or more and 1/4, particularly preferably 1/22 or more and 1/4 or less, and 1/20 or more and 1/4. It is best to: By setting the ratio of the thickness of the non-elastomer layer to the thickness of the elastomer layer within the above range, the semiconductor wafer attached to the die bond layer 3 and the die bond layer 3 can be efficiently cut.

The elastomer layer may have a single layer (one layer) structure or a laminated structure. The elastomer layer preferably has a 1-layer to 5-layer structure, more preferably a 1-layer to 3-layer structure, further preferably a 1-layer to 2-layer structure, and preferably a 1-layer structure. Is. When the elastomer layer has a laminated structure, all the layers may contain the same elastomer, or at least two layers may contain different elastomers.

The non-elastomer layer may have a single layer (one layer) structure or a laminated structure. The non-elastomer layer preferably has a 1-layer to 5-layer structure, more preferably a 1-layer to 3-layer structure, further preferably a 1-layer to 2-layer structure, and preferably a 1-layer structure. Optimal. When the non-elastomer layer has a laminated structure, all the layers may contain the same non-elastomer, or at least two layers may contain different non-elastomers.

The non-elastomer layer preferably contains, as the non-elastomer, a polypropylene resin (hereinafter referred to as metallocene PP) which is a polymerized product of a metallocene catalyst. Examples of the metallocene PP include a propylene / α-olefin copolymer which is a polymer product of a metallocene catalyst. Since the non-elastomer layer contains metallocene PP, the dicing tape can be efficiently manufactured, and the semiconductor wafer attached to the die bond layer 3 and the die bond layer 3 can be efficiently cut.
Examples of commercially available metallocene PPs include Wintech WXK1233 and Wintech WMX03 (both manufactured by Japan Polypropylene Corporation).

Here, the metallocene catalyst is a transition metal compound (so-called metallocene compound) of Group 4 of the periodic table containing a ligand having a cyclopentadienyl skeleton, and reacts with the metallocene compound to form the metallocene compound as a stable ion. It is a catalyst consisting of a co-catalyst that can be activated into a state, and if necessary, contains an organic aluminum compound. The metallocene compound is a crosslinked metallocene compound that enables stereoregular polymerization of propylene.

Among the propylene / α-olefin copolymer which is the polymer product of the metallocene catalyst, the propylene / α-olefin random copolymer which is the polymer product of the metallocene catalyst is preferable, and the propylene / α- which is the polymer product of the metallocene catalyst is preferable. Among the olefin random copolymers, a propylene / α-olefin random copolymer having 2 carbon atoms, which is a polymer product of a metallocene catalyst, and a propylene / α-olefin random copolymer having 4 carbon atoms, which is a polymer product of a metallocene catalyst, Further, those selected from the propylene / α-olefin random copolymer having 5 carbon atoms which is a polymer product of the metallocene catalyst are preferable, and among these, the propylene / ethylene random copolymer which is a polymer product of the metallocene catalyst is preferable. Optimal.

The propylene / α-olefin random copolymer, which is a polymer product of the metallocene catalyst, has a melting point of 80 from the viewpoint of coextrusion film forming property with the elastomer layer and splitting property of the semiconductor wafer attached to the dicing film. The temperature of ° C. or higher and 140 ° C. or lower, particularly preferably 100 ° C. or higher and 130 ° C. or lower.
The melting point of the propylene / α-olefin random copolymer, which is a polymer of the metallocene catalyst, can be measured by the method described above.

Here, when the elastomer layer is arranged on the outermost layer of the base material layer 1, when the base material layer 1 is used as a roll body, the elastomer layers arranged on the outermost layer are likely to be blocked from each other (adhesion). It will be easier). Therefore, it becomes difficult to rewind the base material layer 1 from the roll body. On the other hand, in the preferred embodiment of the base material layer 1 having the laminated structure described above, the non-elastomer layer / elastomer layer / non-elastomer layer, that is, the non-elastomer layer is arranged on the outermost layer, and thus the basis of such an embodiment. The material layer 1 has excellent blocking resistance. As a result, it is possible to prevent the manufacturing of the semiconductor device using the dicing die bond film 20 from being delayed due to blocking.

The non-elastomer layer preferably contains a resin having a melting point of 100 ° C. or higher and 130 ° C. or lower and having a molecular weight dispersion degree (mass average molecular weight / number average molecular weight) of 5 or less. Examples of such a resin include metallocene PP.
Since the non-elastomer layer contains the resin as described above, the non-elastomer layer can be cooled and solidified more quickly in the calf maintenance step. Therefore, it is possible to more sufficiently suppress the shrinkage of the base material layer 1 after the dicing film is thermally shrunk.
Thereby, the calf can be more sufficiently maintained in the calf maintenance step.

The pressure-sensitive adhesive layer 2 contains a pressure-sensitive adhesive. The pressure-sensitive adhesive layer 2 holds the dicing film as the die-bond layer 3 by adhering it.

Examples of the pressure-sensitive adhesive include those capable of reducing the pressure-sensitive adhesive force by an external action in the process of using the dicing die-bond film 20 (hereinafter referred to as a pressure-reducing pressure-sensitive adhesive).

When an adhesive-reducing adhesive is used as the adhesive, the adhesive layer 2 exhibits a relatively high adhesive force (hereinafter referred to as a high adhesive state) and a relatively low adhesive force in the process of using the dicing die bond film 20. It is possible to use the indicated state (hereinafter referred to as low adhesive state) properly. For example, when the semiconductor wafer attached to the die bond layer 3 and the die bond layer 3 is subjected to splitting, the plurality of die bond layers 3 separated by the splitting may be lifted or peeled off from the adhesive layer 2. Use a high adhesive state to suppress. On the other hand, in order to pick up a plurality of semiconductor chips with a die bond layer that have been separated after the semiconductor wafers attached to the die bond layer 3 and the die bond layer 3 are cut, the adhesive layer 2 is provided with a plurality of die bond layers. A low adhesive state is used to facilitate picking up of semiconductor chips.

Examples of the pressure-sensitive adhesive include a pressure-sensitive adhesive that can be cured by irradiation in the process of using the dicing die-bond film 20 (hereinafter referred to as a radiation-curable pressure-sensitive adhesive).

Examples of the radiation-curing pressure-sensitive adhesive include pressure-sensitive adhesives that are cured by irradiation with electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays. Among these, it is preferable to use a pressure-sensitive adhesive (ultraviolet-curing pressure-sensitive adhesive) that is cured by irradiation with ultraviolet rays.

The radiation-curable pressure-sensitive adhesive includes, for example, a base polymer such as an acrylic polymer and a radiation-polymerizable monomer component or a radiation-polymerizable oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples thereof include additive-type radiation-curable pressure-sensitive adhesives.

Examples of the acrylic polymer include those containing a monomer unit derived from a (meth) acrylic acid ester. Examples of the (meth) acrylic acid ester include (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester.

The pressure-sensitive adhesive layer 2 may contain an external cross-linking agent. As the external cross-linking agent, any one that can react with the acrylic polymer as the base polymer to form a cross-linked structure can be used. Examples of such an external cross-linking agent include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based cross-linking agents.

Examples of the radiation-polymerizable monomer component include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, and dipentaerythritol monohydroxypenta (meth). ) Acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate and the like. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based. The content ratio of the radiation-polymerizable monomer component and the radiation-polymerizable oligomer component in the radiation-curable pressure-sensitive adhesive is selected within a range that appropriately reduces the stickiness of the pressure-sensitive adhesive layer 2.

The radiation-curing pressure-sensitive adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketor compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphor. Examples thereof include quinone, halogenated ketone, acylphosphinoxide, and acylphosphonate.

The pressure-sensitive adhesive layer 2 may contain a cross-linking accelerator, a pressure-sensitive adhesive, an anti-aging agent, a pigment, a colorant such as a dye, or the like, in addition to the above-mentioned components.

The thickness of the pressure-sensitive adhesive layer 2 is preferably 1 μm or more and 50 μm or less, more preferably 2 μm or more and 30 μm or less, and further preferably 5 μm or more and 25 μm or less.
The thickness of the pressure-sensitive adhesive layer 2 is determined by, for example, measuring the thickness of five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and arithmetically averaging these thicknesses. Can be asked.

The dicing die bond film 20 according to the present embodiment is used, for example, as an auxiliary tool for manufacturing a semiconductor integrated circuit. Hereinafter, specific examples of using the dicing die bond film 20 will be described.
Hereinafter, an example using the dicing die bond film 20 in which the base material layer 1 is one layer will be described.

The methods for manufacturing semiconductor integrated circuits are a half-cut process in which a groove is formed in the semiconductor wafer in order to process the semiconductor wafer into chips (dies) by cutting, and then the semiconductor wafer is ground to reduce the thickness, and a half-cut process. A mounting process in which one surface of the semiconductor wafer after the process (for example, a surface opposite to the circuit surface) is attached to the die bond layer 3 to fix the semiconductor wafer to the dicing tape 10, and half-cut semiconductor chips are used. The expanding step of widening the distance, the calf maintenance step of maintaining the distance between the semiconductor chips, and the semiconductor chip (die) in a state where the die bond layer 3 is attached by peeling between the die bond layer 3 and the pressure-sensitive adhesive layer 2. It has a pickup step of taking out and a die bond step of adhering a semiconductor chip (die) to which the die bond layer 3 is attached to an adherend. When carrying out these steps, the dicing tape (dicing die bond film) of the present embodiment is used as a manufacturing auxiliary tool.

In the half-cut step, as shown in FIGS. 2A to 2D, a half-cut process for cutting the semiconductor integrated circuit into small pieces (dies) is performed. Specifically, the wafer processing tape T is attached to the surface of the semiconductor wafer W opposite to the circuit surface (see FIG. 2A). Further, the dicing ring R is attached to the wafer processing tape T (see FIG. 2A). With the wafer processing tape T attached, a groove for division is formed (see FIG. 2B). While the backgrind tape G is attached to the surface on which the groove is formed, the wafer processing tape T attached first is peeled off (see FIG. 2C). With the back grind tape G attached, grinding is performed until the semiconductor wafer W has a predetermined thickness (see FIG. 2D).

In the mounting step, as shown in FIGS. 3A to 3B, the dicing ring R is attached to the adhesive layer 2 of the dicing tape 10, and then the half-cut semiconductor wafer W is attached to the surface of the exposed die bond layer 3. (See FIG. 3A). Then, the back grind tape G is peeled off from the semiconductor wafer W (see FIG. 3B).

In the expanding step, as shown in FIGS. 4A to 4C, the dicing ring R is fixed to the holder H of the expanding device. The dicing die bond film 20 is stretched so as to spread in the plane direction by pushing up the dicing die bond film 20 from the lower side by using the push-up member U provided in the expanding device (see FIG. 4B). As a result, the semiconductor wafer W that has been half-cut is cut under a specific temperature condition. The above temperature conditions are, for example, -20 to 5 ° C, preferably -15 to 0 ° C, and more preferably -10 to -5 ° C. The expanded state is released by lowering the push-up member U (see FIG. 4C).
Further, in the expanding step, as shown in FIGS. 5A to 5B, the dicing tape 10 is stretched so as to increase the area under higher temperature conditions (for example, room temperature (23 ° C.)). As a result, the cut adjacent semiconductor chips W are separated from each other in the plane direction of the film surface, and the distance is further widened.

In the calf maintenance step, as shown in FIG. 6, hot air (for example, 100 to 130 ° C.) is applied to the dicing tape 10 to heat-shrink the dicing tape 10 and then cool and solidify the dicing tape 10. Maintain the distance (calf) between.

In the pick-up step, as shown in FIG. 7, the semiconductor chip W to which the die bond layer 3 is attached is peeled off from the adhesive layer 2 of the dicing tape 10. Specifically, the pin member P is raised to push up the semiconductor chip W to be picked up via the dicing tape 10. The pushed-up semiconductor chip is held by the suction jig J.

In the die-bonding step, the semiconductor chip W to which the die-bonding layer 3 is attached is adhered to the adherend.
In the dicing die bond film 20 according to the present embodiment, the shear loss elastic modulus of the die bond layer 3 (die bond film) at 120 ° C. is 0.03 MPa or more and 0.09 MPa or less, so that it is heated under heating conditions (for example, 120 ° C.). ), When the die bond layer 3 is adhered to the adherend, the die bond layer 3 is suppressed from being peeled off from the adherend.

The die bond film and the dicing die bond film according to the present invention are not limited to the above-described embodiment. Further, the die bond film and the dicing die bond film according to the present invention are not limited by the above-mentioned effects. The die bond film and the dicing die bond film according to the present invention can be variously modified without departing from the gist of the present invention.

Next, the present invention will be described in more detail with reference to examples. The following examples are for the purpose of explaining the present invention in more detail, and do not limit the scope of the present invention.

[Example 1]
<Making dicing tape>
A pressure-sensitive adhesive composition was applied to a surface of a PET-based separator (thickness 50 μm), which was a release liner, with a thickness of 10 μm using an applicator. After applying the pressure-sensitive adhesive composition, the PET-based separator was heated and dried at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer. Next, an EVA film (manufactured by Gunze Co., Ltd., thickness 115 μm) was attached onto the pressure-sensitive adhesive layer and stored at room temperature (23 ° C.) for 72 hours to obtain a dicing tape.
The pressure-sensitive adhesive composition was prepared as follows.
First, 100 parts by mass of 2-ethylhexyl acrylate (2EHA) and 19 parts by mass of -2-hydroxyethyl acrylate (HEA) were placed in a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirrer. A first resin composition was obtained by adding 0.4 parts by mass of benzoyl peroxide and 80 parts by mass of toluene and carrying out a polymerization reaction at 60 ° C. (liquid temperature) for 10 hours in a nitrogen stream.
Next, 1.2 parts by mass of 2-methacryloyloxyethyl isocyanate (MOI) was added to the first resin composition, and an addition reaction was carried out in the air at 50 ° C. (liquid temperature) for 60 hours to carry out a second resin composition. Got
Next, with respect to 100 parts by mass of the second resin composition, 1.3 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Industry Co., Ltd., trade name "Coronate L") and a photopolymerization initiator (Ciba Specialty Chemicals). A pressure-sensitive adhesive composition was prepared by adding 3 parts by mass (manufactured by the company, trade name "Irgacure 184").
<Preparation of dicing die bond film>
Acrylic resin (manufactured by Nagase Chemtex, trade name "SG-80H") 100 parts by mass, phenol resin (manufactured by Meiwa Kasei Co., Ltd., trade name "MEHC-7851") 15 parts by mass, silica filler (manufactured by Admatex, product) 22 parts by mass of the name "SO-25R") and 0.5 parts by mass of the silane coupling agent (manufactured by Shinetsu Silicone Co., Ltd., trade name "KBM403") are dissolved in methyl ethyl ketone so that the solid content concentration is 20% by mass. Then, the first die bond composition was obtained.
Next, the first die bond composition was applied to a surface of a PET-based separator (thickness 50 μm), which is a release liner, so as to have a thickness of 10 μm using an applicator, and at 130 ° C. By drying for 2 minutes, a die bond sheet in which a die bond layer (die bond film) was laminated on the release liner was obtained.
Next, using a hand roller, the side of the dicing sheet on which the release liner was not laminated was attached onto the pressure-sensitive adhesive layer of the dicing tape to obtain the dicing die-bond film according to Example 1.

(Measurement of shear modulus at 120 ° C and 180 ° C)
With respect to the die bond layer (die bond film) of the dicing die bond film according to Example 1, the shear loss elastic modulus at 120 ° C. and 180 ° C. was measured.
The elastic modulus of shear loss at 120 ° C. is that when one circular surface of a die-bonded film punched into a cylinder of Φ7.5 mm × 1 mm is subjected to shear vibration at a temperature of 120 ° C. and a frequency of 1 Hz, the other is circular. It was obtained by measuring and analyzing the shear vibration transmitted to the surface.
The measurement of shear vibration and the analysis of the measured values were performed using a viscoelasticity measuring device (manufactured by Rheometric Scientific, model ARES).
The elastic modulus of shear loss at 180 ° C. was measured in the same manner as above except that the temperature was set to 180 ° C.
The results of measuring the shear modulus at 120 ° C and 180 ° C are shown in Table 1 below.
The elastic modulus of shear loss at 120 ° C. and 180 ° C. was also measured for the die bond layer (die bond film) of the dicing die bond film according to Example 2, Comparative Example 1 and Comparative Example 2, which will be described later. The results are also shown in Table 1.

(Measurement of shear adhesive force at 120 ° C and 180 ° C)
Before the thermosetting resin (acrylic resin and phenol resin) of the die bond layer (die bond film) of the die bond film according to Example 1 was cured, the shear adhesive force of the die bond film at 120 ° C. and 180 ° C. was measured.
The shear bonding force at 120 ° C. is a shear tester using a die bond film attached to a bare chip with a thickness of 0.5 mm, 3 mm x 3 mm under the conditions of a temperature of 120 ° C., a speed of 10 mm / s, and a pressure of 0.15 MPa. (Made, Dage 4000) was used, and the test piece was measured by adopting the conditions of a measurement speed of 500 μm / s, a measurement gap of 100 μm, and a stage temperature of 120 ° C. The above measurement was performed 20 seconds after the test piece was placed on the measurement stage.
The shear adhesive force at 180 ° C. was measured in the same manner as above except that the stage temperature was set to 180 ° C.
The results of measuring the shear adhesive force at 120 ° C and 180 ° C are shown in Table 1 below.
The shear adhesive force at 120 ° C. and 180 ° C. was also measured for the dicing layer (die bond film) of the dicing die bond film according to Example 2, Comparative Example 1 and Comparative Example 2 described later. The results are also shown in Table 1.

(Measurement of shear adhesive force after exposure to high temperature and high humidity environment)
The dicing layer (die bond film) of the dicing die bond film according to Example 1 was cured at 175 ° C. for 5 hours, and 100 in a high temperature / high humidity (135 ° C., relative humidity 85% RH) environment (so-called HAST environment). After time exposure, the shear adhesion of the die bond layer was measured.
In this measurement, the die bond film was attached to a bare chip having a thickness of 0.5 mm and a thickness of 3 mm × 3 mm under the conditions of a temperature of 120 ° C., a speed of 10 mm / s, and a pressure of 0.15 MPa, and then the die bond film was cured at 175 ° C. for 5 hours. A test piece exposed to an environment of 135 ° C. and a relative humidity of 85% RH for 100 hours was used as a test piece, and a shear tester (Dage 4000) was used to measure the test piece at a measurement speed of 500 μm / s and a measurement gap of 100 μm. The measurement was performed using the condition of a stage temperature of 23 ° C. The above measurement was performed 20 seconds after the test piece was placed on the measurement stage.
Further, the shear adhesive force of the die bond film after being attached to the bare wafer and cured at 175 ° C. for 5 hours was measured in the same manner as above before being exposed to an environment of 135 ° C. and a relative humidity of 85% RH. ..
The table below shows the results of measuring the shear adhesion after exposure to an environment of 135 ° C and 85% RH relative humidity, and the results of measuring the shear adhesion before exposing to an environment of 135 ° C and 85% RH relative humidity. Shown in 1.
The shear adhesive force after being exposed to an environment of 135 ° C. and a relative humidity of 85% RH, and the shear adhesive force before being exposed to an environment of 135 ° C. and a relative humidity of 85% RH are described in Example 2 and Comparative Example 1 described later. , And the die bond layer (die bond film) of the dicing die bond film according to Comparative Example 2 was also measured. The results are also shown in Table 1.

(Measurement of hygroscopicity after exposure to high temperature and high humidity environment)
The dicing die bond film according to Example 1 was cured at 175 ° C. for 1 hour, exposed to an environment of high temperature and high humidity (135 ° C., relative humidity 85% RH) for 100 hours, and then absorbed in the die bond film. The rate was measured.
The hygroscopicity is 100 hours before being cured at 175 ° C. for 1 hour and exposed to an environment of 135 ° C. and 85% RH relative humidity, and after being cured at 175 ° C. for 1 hour and exposed to an environment of 135 ° C. and 85% relative humidity RH. It was calculated by determining the change in mass after exposure.
The results of measuring the hygroscopicity are shown in Table 1 below.
The hygroscopicity was also measured for the die bond layer (die bond film) of the dicing die bond film according to Example 2, Comparative Example 1 and Comparative Example 2, which will be described later. The results are also shown in Table 1.

(Measurement of tensile storage elastic modulus at 130 ° C)
After curing the dicing die bond film of the dicing die bond film according to Example 1 at 175 ° C. for 1 hour, the tensile storage elastic modulus of the dicing die bond film at 130 ° C. was measured.
The tensile storage elastic modulus at 130 ° C. after curing at 175 ° C. for 1 hour was measured using a solid viscoelasticity measuring device (for example, model RSAIII, manufactured by Leometric Scientific Co., Ltd.).
Specifically, a test piece having a length of 40 mm (measurement length) and a width of 10 mm is cut out from the die bond film after being cured at 175 ° C. for 1 hour, and a solid viscoelasticity measuring device (for example, model RSAIII, rheometric scientist) is cut out. The tensile storage elastic modulus of the test piece was measured in the temperature range of -30 to 280 ° C. under the conditions of a frequency of 1 Hz, a heating rate of 10 ° C./min, and a chuck distance of 22.5 mm using FIC Co., Ltd.). .. At that time, it was obtained by reading the value at 130 ° C.
The tensile storage elastic modulus at 130 ° C. was also measured for the die bond layer (die bond film) of the dicing die bond film according to Example 2, Comparative Example 1 and Comparative Example 2, which will be described later. The results are also shown in Table 1.

(Measurement of elastic modulus at room temperature and 900 Hz)
Before curing the die-bonded film of the dicing die-bonded film according to Example 1, the elastic modulus of the die-bonded film was measured at room temperature (23 ° C.) by dynamic viscoelasticity measurement at 900 Hz.
The elastic modulus before curing by dynamic viscoelasticity measurement at room temperature at 900 Hz uses a dynamic viscoelastic device (Rheology-4000, manufactured by Rheology) to raise the temperature of the die bond film before curing in the automatic load mode. It was obtained by measuring from −50 ° C. to 100 ° C. under the condition of a speed of 5 ° C./min.
The elastic modulus by dynamic viscoelasticity measurement at room temperature at 900 Hz was also measured for the die bond layer (die bond film) of the dicing die bond film according to Example 2, Comparative Example 1 and Comparative Example 2, which will be described later. The results are also shown in Table 1.

The dicing die bond film according to Example 1 obtained as described above was evaluated for peeling from the adherend (bare chip) as follows.

(Evaluation of peeling from the adherend)
-Evaluation of peeling at the time of die bonding A 12-inch bare wafer (diameter 300 mm, thickness 50 μm) and a dicing ring were attached to the dicing die bond film according to Example 1. Next, the bare wafer and the die bond layer (die bond film) are cut using the die separator DDS230 (manufactured by DISCO Corporation) to obtain a bare chip with a plurality of die bond layers (die bond film), and the bare chip with the plurality of die bond layers is obtained. Was laminated and bonded on the lead frame substrate in a stepped manner. A warped wafer was used as the bare wafer.

The warped wafer was manufactured as follows.
First, the following (a) to (e) were dissolved in methyl ethyl ketone to obtain a warp adjusting composition having a solid content concentration of 20% by mass.
(A) Acrylic resin (manufactured by Nagase ChemteX, trade name "SG-70L"): 100 parts by mass (b) Epoxy resin (manufactured by DIC, trade name "HP-4700"): 90 parts by mass (c) Phenol Resin (manufactured by Meiwa Chemical Co., Ltd., trade name "H-4"): 102 parts by mass (d) Spherical silica (manufactured by Admatex Co., Ltd., trade name "SO-25R"): 220 parts by mass (e) Curing catalyst (Shikoku Kasei) Co., Ltd., trade name "2PHZ"): 0.6 parts by mass Next, the warp adjusting composition was thickened using an applicator on a silicone-treated surface of a PET-based separator (thickness 50 μm) as a release liner. The coating was applied at a thickness of 25 μm and dried at 150 ° C. for 2 minutes to obtain a warp adjusting sheet in which a warp adjusting layer was laminated on the release liner.
Next, a bare wafer is attached to the warp adjusting sheet on the side where the release liner is not laminated, using a laminator (MCK, model MRK-600) under the conditions of 60 ° C., 0.3 MPa, and 10 mm / s. Then, it was placed in an oven and heated at 175 ° C. for 1 hour to heat-cure the thermosetting resin in the warp adjusting layer, whereby the warped bare wafer was obtained by shrinking the warp adjusting layer.
After shrinking the warp adjusting layer, a wafer processing tape (manufactured by Nitto Denko Corporation, trade name "V-12SR2") is attached to the side of the warped bare wafer where the warp adjusting layer is not laminated, and then the above. The warped bare wafer was fixed to the dicing ring via a wafer processing tape. Then, the warp adjusting layer was removed from the warped bare wafer.
Using a dicing device (manufactured by DISCO, model number 6361), half-cut dicing having a size of 10 mm × 10 mm was performed on the surface (hereinafter referred to as one surface) from which the warp adjusting layer was removed from the warped bare wafer.
Next, a backgrinding tape was attached to one side of the warped bare wafer, and the wafer processing tape was removed from the other side of the warped bare wafer (the side opposite to the one side).
Next, a wafer obtained by grinding the warped bare wafer from the other side using a back grinder (manufactured by DISCO, model DGP8760) so that the thickness of the warped bare wafer is 50 μm (0.05 mm). Was used as a warped wafer.

The peeling evaluation at the time of die bonding was carried out in detail as follows.
First, in a cool expander unit, the bare wafer and the die bond layer (die bond film) are cut under the conditions of an expand temperature of -15 ° C, an expand speed of 200 mm / s, and an expand amount of 12 mm, and a bare chip with a plurality of die bond layers (die bond films) is formed. Got
Next, room temperature expansion was performed under the conditions of room temperature (23 ° C.), an expanding speed of 1 mm / s, and an expanding amount of 10 mm. Then, while maintaining the expanded state, the dicing die bond film at the boundary with the outer peripheral edge of the bare wafer is thermally shrunk under the conditions of a heat temperature of 220 ° C., an air volume of 40 L / min, a heat distance of 20 mm, and a rotation speed of 3 ° / s. , The calf of the bare chip with the plurality of die bond layers was maintained.
Next, the bare chips with the plurality of die bond layers were picked up, and the picked up bare chips with the die bond layers were subjected to a die bond at a stage temperature of 120 ° C. using a die bonder (manufactured by Shinkawa Co., Ltd., trade name "Die Bonder SPA-300"). Under the conditions of a load of 0.2 MPa and a die bond time of 2 seconds, 7 steps of continuous bonding were performed on the lead frame substrate in a stepped manner. The 7-stage continuous bonding was performed by bonding the bare chips with the die bond layer in the same direction by shifting them by 200 μm so as to form a step.
The evaluation of the peeled state at the time of die bonding is performed from the bare chips by photographing the laminated state of the bare chips by microscopic observation from the side orthogonal to the stacking direction immediately after laminating the bare chips with the die bond layer in a stepped manner and binarizing them. The peeled state of the die bond layer was evaluated. The peeled state of the die bond layer was evaluated as ◯ for a level without practical problems and as x for a level with practical problems. The results are shown in Table 1.

-Peeling evaluation at room temperature (23 ° C) The peeling evaluation at room temperature (23 ° C) is the side orthogonal to the stacking direction after placing the bare chips with the die bond layer (die bond film) laminated in a stepped manner at room temperature (23 ° C). Therefore, the laminated state of the bare chips was photographed by microscopic observation and binarized to evaluate the peeled state of the die bond layer (die bond film) from the bare chips. The results are shown in Table 1.

-Evaluation of peeling during molding After molding using a mold resin molding device at a temperature of 180 ° C so as to cover the bare chips laminated on the lead frame substrate, the molded portion is removed and the side orthogonal to the stacking direction. Therefore, the laminated state of the bare chips was photographed by microscopic observation and binarized to evaluate the peeled state of the die bond layer (die bond film) from the bare chips. The results are shown in Table 1.

-Evaluation of peeling under high temperature and high humidity After molding at a temperature of 180 ° C using a mold resin molding device so as to cover the bare chips laminated on the lead frame substrate, the mold portion is removed, and the temperature is 135 ° C and relative. After being exposed to an environment with a humidity of 85% RH, the laminated state of the bare chips is photographed by microscopic observation from the side orthogonal to the stacking direction, and binarized to show the peeled state of the die bond layer (die bond film) from the bare chips. evaluated. The results are shown in Table 1.
Also in Example 2, Comparative Example 1 and Comparative Example 2 described later, as in Example 1, peeling evaluation at the time of die bonding, peeling evaluation at room temperature, peeling evaluation at the time of molding, and under high temperature and high humidity. The peeling evaluation was performed in. The results are also shown in Table 1.

[Example 2]
<Making dicing tape>
A dicing tape was produced in the same manner as in Example 1.
<Preparation of dicing die bond film>
Acrylic resin (manufactured by Nagase Chemtex, trade name "SG-P3") 100 parts by mass, phenol resin (manufactured by Meiwa Kasei Co., Ltd., trade name "MEHC-7851") 45 parts by mass, silica filler (manufactured by Admatex, product) Dissolve 47 parts by mass of the name "SO-25R") and 0.5 parts by mass of the silane coupling agent (manufactured by Shinetsu Silicone Co., Ltd., trade name "KBM403") in methyl ethyl ketone so that the solid content concentration is 20% by mass. Then, the second die bond composition was obtained.
Next, the second die bond composition was applied to a surface of a PET-based separator (thickness 50 μm), which is a release liner, so as to have a thickness of 10 μm using an applicator, and at 130 ° C. By drying for 2 minutes, a die bond sheet in which a die bond layer was laminated on the release liner was obtained.
Next, using a hand roller, the side of the dicing sheet on which the release liner was not laminated was attached onto the pressure-sensitive adhesive layer of the dicing tape to obtain the dicing die bond film according to Example 2.
<Laminating bare chips with die bond layer>
In the same manner as in Example 1, bare chips with a die bond layer (die bond film) were continuously bonded in 7 steps on the lead frame substrate in a stepped manner.

[Comparative Example 1]
<Making dicing tape>
A dicing tape was produced in the same manner as in Example 1.
<Preparation of dicing die bond film>
100 parts by mass of acrylic resin (manufactured by Nagase ChemteX, trade name "SG-790"), 100 parts by mass of phenol resin (manufactured by Meiwa Kasei Co., Ltd., trade name "MEHC-7500"), and silica slurry (manufactured by Nissan Chemical Industries, Ltd.) , Trade name "MEK-ST40") 140 parts by mass (in terms of solid content) was dissolved in methyl ethyl ketone so that the solid content concentration was 20% by mass to obtain a third die bond composition.
Next, the third die bond composition was applied to a surface of a PET-based separator (thickness 50 μm), which was a release liner, so as to have a thickness of 10 μm using an applicator, and at 130 ° C. By drying for 2 minutes, a die bond sheet in which a die bond layer was laminated on the release liner was obtained.
Next, using a hand roller, the side of the dicing sheet on which the release liner was not laminated was attached onto the pressure-sensitive adhesive layer of the dicing tape to obtain a dicing die-bond film according to Comparative Example 1.
<Laminating bare chips with die bond layer>
In the same manner as in Example 1, bare chips with a die bond layer (die bond film) were continuously bonded in 7 steps on the lead frame substrate in a stepped manner.

[Comparative Example 2]
<Making dicing tape>
A dicing tape was produced in the same manner as in Example 1.
<Preparation of dicing die bond film>
100 parts by mass of acrylic resin (manufactured by Nagase ChemteX, trade name "SG-790"), 10 parts by mass of phenol resin (manufactured by Meiwa Kasei Co., Ltd., trade name "MEHC-7500"), and silica slurry (manufactured by Nissan Chemical Industries, Ltd.) , Trade name "MEK-ST40") 123 parts by mass (in terms of solid content) was dissolved in methyl ethyl ketone so that the solid content concentration was 20% by mass to obtain a fourth die bond composition.
Next, the fourth die bond composition was applied to a surface of a PET-based separator (thickness 50 μm), which is a release liner, so as to have a thickness of 10 μm using an applicator, and at 130 ° C. By drying for 2 minutes, a die bond sheet in which a die bond layer was laminated on the release liner was obtained.
Next, using a hand roller, the side of the dicing sheet on which the release liner was not laminated was attached onto the pressure-sensitive adhesive layer of the dicing tape to obtain a dicing die-bond film according to Comparative Example 2.
<Laminating bare chips with die bond layer>
In the same manner as in Example 1, bare chips with a die bond layer (die bond film) were continuously bonded in 7 steps on the lead frame substrate in a stepped manner.

In Examples 1 and 2, the value of the shear loss elastic modulus of the die bond film at 120 ° C. was in the range of 0.03 MPa or more and 0.09 MPa or less, and the peeling evaluation at the time of die bond was 〇. .. That is, in Examples 1 and 2, it was found that the die-bonded film was peeled off only at a level at which there was no practical problem at the time of die-bonding.
Further, in Examples 1 and 2, the value of the shear loss elastic modulus of the die bond film at 180 ° C. was in the range of 0.01 MPa or more and 0.05 MPa or less, and the peeling evaluation at the time of molding was 〇. there were. That is, in Examples 1 and 2, it was found that the die-bonded film peeled off only at a level where there was no practical problem at the time of molding.
Further, in Examples 1 and 2, the elastic modulus value by the dynamic viscoelasticity measurement at 900 Hz at room temperature was in the range of 1 GPa or more and less than 3 GPa, and the room temperature peeling evaluation was 〇. That is, in Examples 1 and 2, it was found that the die bond film peeled off only at a level at which there was no practical problem at room temperature.
Further, in Examples 1 and 2, the value of the shear adhesive force after exposure to an environment of 135 ° C. and a relative humidity of 85% is 15 MPa or more, and further, an environment of 135 ° C. and a relative humidity of 85%. The ratio of the shear adhesive force before exposure to the shear adhesive force after 100 hours of exposure to an environment of 135 ° C. and 85% relative humidity was 0.6 or more, and the peeling evaluation under high temperature and high humidity environment was performed. Both were 〇. That is, in Examples 1 and 2, it was found that the die bond film peeled off only at a level where there was no practical problem in a high temperature and high humidity environment.
On the other hand, in Comparative Examples 1 and 2, the value of the shear modulus of the die bond film at 120 ° C. was not in the range of 0.03 MPa or more and 0.09 MPa or less, and the die bond film at 180 ° C. The values of the shear loss elastic modulus were not in the range of 0.01 MPa or more and 0.05 MPa or less.
Further, in Comparative Examples 1 and 2, the elastic modulus value measured by dynamic viscoelasticity measurement at 900 Hz at room temperature was not in the range of 1 GPa or more and less than 3 GPa.
Further, in Comparative Examples 1 and 2, the values of the shear adhesive force after exposure to an environment of 135 ° C. and a relative humidity of 85% are both less than 15 MPa, and further, an environment of 135 ° C. and a relative humidity of 85%. The ratio of the shear adhesive force before exposure to the shear adhesive force after 100 hours of exposure to an environment at 135 ° C. and 85% relative humidity was less than 0.6 in each case.
In Comparative Examples 1 and 2, the peeling evaluation at the time of die bonding, the peeling evaluation at room temperature, the peeling evaluation at the time of molding, and the peeling evaluation under a high temperature and high humidity environment were all x. That is, in Comparative Examples 1 and 2, it was found that the die-bonded film was peeled to a level that was practically problematic.

1 Base material layer 2 Adhesive layer 3 Die bond layer 10 Dicing film 20 Dicing die bond film G Back grind tape H Holder J Adhesive jig T Wafer processing tape U Push-up member W Semiconductor wafer

Claims (7)

Shear loss modulus at 120 ° C. is Ri der least 0.09MPa or less 0.03 MPa,
The shear modulus at 180 ° C. is 0.01 MPa or more and 0.05 MPa or less.
A die bond film in which the ratio of the shear loss elastic modulus at 180 ° C. to the shear loss elastic modulus at 120 ° C. is 0.5 or more and 0.8 or less. The shear adhesive force with respect to the bare wafer at 120 ° C. is 0.1 MPa or more and 0.4 MPa or less.
The die bond film according to claim 1 , wherein the shear adhesive force with respect to the bare wafer at 180 ° C. is 0.05 MPa or more and 0.3 MPa or less. The die bond film according to claim 1 or 2 , wherein the elastic modulus is 1 GPa or more and less than 3 GPa by dynamic viscoelasticity measurement at room temperature at 900 Hz. Has thermosetting properties
The die bond film according to any one of claims 1 to 3 , wherein the hygroscopicity after being cured at 175 ° C. for 1 hour and exposed to an environment at 135 ° C. and a relative humidity of 85% RH for 100 hours is 1% by mass or less. .. Has thermosetting properties
The die bond film according to any one of claims 1 to 4 , wherein the tensile storage elastic modulus at 130 ° C. after being cured at 175 ° C. for 1 hour is 0.2 MPa or more and 1.0 MPa or less. Has thermosetting properties
After being cured at 175 ° C. for 5 hours and exposed to an environment of 135 ° C. and a relative humidity of 85% RH for 100 hours, the shear adhesive force to the bare wafer is 15 MPa or more.
Cure at 175 ° C for 5 hours to 135 ° C and 85% relative humidity RH for shear adhesion to bare wafers before exposure to 175 ° C for 5 hours to 135 ° C and 85% RH relative humidity The die bond film according to any one of claims 1 to 5 , wherein the ratio of the shear adhesive force to the bare wafer after exposure for 100 hours is 0.6 or more. A dicing tape in which an adhesive layer is laminated on a base material layer,
A dicing bond layer laminated on the adhesive layer of the dicing tape is provided.
A dicing die bond film in which the die bond layer is made of the die bond film according to any one of claims 1 to 6.

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