TWI763867B - Sliced Die Stick Film - Google Patents

Abstract

An object of the present invention is to provide a slicing die-bonding film having an adhesive layer that is excellent in storage stability, can be cured in a short time, and can perform appropriate wire bonding after curing. The dicing die-bonding film of the present invention comprises: a dicing tape having a laminated structure comprising a base material and an adhesive layer; and an adhesive layer releasably adhering to the above-mentioned adhesive layer in the above-mentioned dicing tape; and The above-mentioned adhesive layer contains a thermosetting component, a filler, and a hardening accelerator, and the heat release measured by DSC after heating at 130°C for 30 minutes is less than 60% of the heat release before heating, and the temperature after the above heating is 130°C The storage elastic modulus is above 20 MPa and below 4000 MPa.

Description

Sliced Die Stick Film

The present invention relates to a slicing and sticking film. More specifically, the present invention relates to a diced die attach film that can be used in the manufacturing process of semiconductor devices.

In the manufacturing process of semiconductor devices, in the process of obtaining a semiconductor wafer with an adhesive film of a size corresponding to the wafer for die bonding, that is, a semiconductor wafer with an adhesive layer for die bonding, there is a case where a dicing die bonding film is used. The dicing die-bonding film has a size corresponding to the semiconductor wafer to be processed, such as a dicing tape comprising a substrate and an adhesive layer, and a die-bonding film (adhesive) releasably closely attached to the side of the adhesive layer. Floor).

As one of the methods of obtaining a semiconductor wafer with an adhesive layer using a dicing die-bonding film, a method is known through a step of extending a dicing tape in the dicing die-bonding film to cut the die-bonding film. In this method, first, a semiconductor wafer is attached on the die-bonding film of the dicing die-bonding film. For example, this semiconductor wafer is processed so that it can be cut|disconnected together with a die-bonding film later, and it can be singulated into a plurality of semiconductor wafers. Next, in order to cut the die-bonded film on the dicing tape, the dicing tape of the dicing die-bonding film is stretched in two-dimensional directions including the radial and circumferential directions of the semiconductor wafer by using a stretching device. In this extending step, the semiconductor wafer on the die-bonding film is also cut at a position corresponding to the cutting part in the die-bonding film, and the semiconductor wafer is singulated on the dicing die-bonding film or the dicing tape. multiple semiconductors body wafer. Next, the extending step is performed again in order to increase the separation distance for the plurality of semiconductor wafers with the wafers attached to the wafer after being cut on the dicing tape. Next, after a cleaning step, for example, each semiconductor wafer is lifted up from the lower side of the dicing belt by the pin member of the pickup mechanism together with the die-bonding film of the corresponding size of the closely attached wafer, and picked up from the dicing belt. In this way, a semiconductor wafer with a die-attached film, that is, an adhesive layer, is obtained. The semiconductor wafer to which the adhesive layer is attached is fixed to an adherend such as a mounting substrate by die bonding through the adhesive layer. For example, the technique of the dicing die-bonding film used as described above is described in the following Patent Documents 1 to 3.

[Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2007-2173

[Patent Document 2] Japanese Patent Laid-Open No. 2010-177401

[Patent Document 3] Japanese Patent Laid-Open No. 2016-115804

In recent years, there have been further demands for high functionality, thinning, and miniaturization of semiconductor devices and their packages. As one of the countermeasures, a three-dimensional mounting technology for realizing high-density integration of semiconductor elements by laminating semiconductor elements (semiconductor wafers) in a plurality of steps in the thickness direction has been developed.

As the above-mentioned three-dimensional mounting technique, for example, a technique is known in which a semiconductor wafer serving as a semiconductor wafer to which a die-bonding film is attached is fixed on an adherend such as a substrate, and a separately obtained adhesive wafer is gradually laminated on the lowermost semiconductor wafer. Crystal film semiconductor wafers. When stacking, sometimes avoid As the electrode pads on the wire bonding surface (upper surface) of the lower semiconductor chip, the upper semiconductor chip with the die-attached film is fixed to be offset in the plane direction with respect to the lower semiconductor chip. The semiconductor device (multi-stage laminated semiconductor device) obtained by using the die-bonding film on the adherend and laminating the multi-stage semiconductor wafers obtained by this technique becomes a step shape, and the semiconductor wafer with the die-bonding film at each stage is self-contained. The portion (so-called overhang) of the upper surface of the semiconductor wafer on the lower side protrudes in the plane direction.

The semiconductor wafer and the bonded system electrically connect the electrode pads on the upper surface of the semiconductor wafer and the terminals of the bonded body through bonding wires (wire bonding). The electrode pads on the upper surface of the semiconductor wafer for wire bonding and the bonding wires are connected under heating by combining vibration energy generated by ultrasonic waves and crimping energy generated by applying pressure. Here, in the wire bonding of the electrode pads existing on the overhangs of the semiconductor chip, there is a problem that the overhangs are caused by vibrations generated by ultrasonic waves or loads caused by pressure applied to the overhangs. It is difficult to connect due to shaking, and the semiconductor wafer in the overhang is bent, etc.

This problem can be alleviated by making the die-bonding films used for the subsequent semiconductor wafers somewhat hardened. However, in order for the die-bonding film to have a certain degree of adhesiveness when the semiconductor chip with the die-bonding film is laminated, and to have a certain degree of hardness during wiring, it is necessary to consider between the lamination of the semiconductor chip and the wiring before the connection. A method in which the die-bonding film is hardened to such an extent that the above-mentioned problems are less likely to occur. However, if it takes time to sufficiently harden the die-stick film, the productivity will decrease. Therefore, the die-bonding film is required to be cured in a short time.

On the other hand, the adhesive film that can be hardened in a short time is easy to penetrate even during storage. There is a tendency to harden, so the storage stability (especially the storage stability at room temperature) tends to be poor. That is, there is a trade-off relationship between curability in a short time and storage stability. Therefore, a die-bonding film (adhesive layer) that is excellent in storage stability, can be cured in a short time, and can perform appropriate wire bonding (especially appropriate wire bonding for overhangs) after curing is required.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a diced die-bonding film having an adhesive layer that is excellent in storage stability, can be cured in a short time, and can perform appropriate wire bonding after curing.

The inventors of the present invention have made intensive studies in order to achieve the above-mentioned object, and as a result, they have found that if a thermosetting component, a filler, and a curing accelerator are used, and after heating at 130° C. for 30 minutes, differential scanning calorimeter (DSC) is used. The measured exothermic heat is less than 60% of the exothermic heat before heating, and the storage elastic modulus at 130 ° C after the above heating is 20 MPa or more and 4000 MPa or less. The adhesive layer, even if it is used as a slicing and die-bonding film , It is also excellent in storage stability and the adhesive layer can be hardened in a short time, and after hardening, suitable wire bonding can be performed. The present invention has been completed based on these findings.

That is, the present invention provides a dicing die-bonding film comprising: a dicing tape having a laminated structure including a base material and an adhesive layer; and an adhesive layer releasably adhering to the above-mentioned dicing tape. An adhesive layer; and the above-mentioned adhesive layer contains a thermosetting component, a filler, and a hardening accelerator, and the exothermic heat measured by DSC after heating at 130 ° C for 30 minutes is less than 60% of the exothermic heat before heating, and the above heating After that, the storage elastic modulus at 130°C is more than 20MPa and 4000 below MPa.

The dicing die-bonding film of the present invention includes a dicing tape and an adhesive layer. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive layer is releasably adhered to the adhesive layer in the dicing tape. The diced die-bond film of this configuration can be used to obtain a semiconductor wafer with an adhesive layer during the fabrication of a semiconductor device.

In the slicing die-bonding film of the present invention, the adhesive layer contains a thermosetting component, a filler, and a curing accelerator as described above. Moreover, the exothermic heat measured by DSC after heating at 130 degreeC for 30 minutes was 60% or less of the exothermic heat before heating. This means that 60% or more of the uncured thermosetting components in the adhesive layer before heating are cured by heating under the conditions of 130° C. and 30 minutes. By making the adhesive layer in the dicing die-bonding film of the present invention to have the above-mentioned constitution, the hardening ratio of the adhesive layer obtained by heating under the heating condition for a relatively short time is large, so that the adhesive layer can be It can be hardened in a short time, and the storage elastic modulus can be increased in a short time. Moreover, since the hardening ratio of the adhesive layer obtained by heating under a relatively short-time heating condition is large, hardening is not easy to generate|occur|produce before heating even during storage, that is, it is excellent in storage stability.

Moreover, in the dicing die attach film of the present invention, the adhesive layer is as described above, and the storage elastic modulus at 130° C. after the heating is 20 MPa or more and 4000 MPa or less. By setting the storage elastic modulus after the heating to 20 MPa or more, the adhesive layer can be hardened in a short time, and has a certain degree of hardness after hardening, so that appropriate wire bonding can be performed after hardening. In particular, even when the above-mentioned adhesive layer is used in a multi-layered semiconductor device having overhangs, it is possible to suppress vibrations caused by ultrasonic waves or overhangs during wire bonding. The overhang is shaken by the load generated by the pressurization of the part, so that the overhang can be properly wire-bonded. Moreover, by making the storage elastic modulus after the said heating into 4000 MPa or less, even after hardening, it is excellent in the adhesion reliability with a to-be-adhered body or the adhesion reliability between semiconductor wafers.

Moreover, it is preferable that the said thermosetting component in the said adhesive layer is a thermosetting resin and/or a thermosetting functional group containing thermoplastic resin. The above-mentioned adhesive layer has excellent storage stability, can be hardened in a short time, and can be properly wire-bonded after hardening when a thermosetting resin or a thermoplastic resin containing a thermosetting functional group is used as the thermosetting component. (especially proper wire bonding for overhangs).

Also, the above-mentioned adhesive layer preferably has a viscosity of 300~100000Pa at 90°C. s. Generally speaking, in a multi-stage build-up semiconductor device, since there are many circuit layers, the semiconductor wafer is likely to be greatly warped, and the semiconductor wafer tends to be easily peeled due to this. However, if the viscosity of the above-mentioned adhesive layer at 90°C is 300Pa. When the value is more than s, when the die bonding is performed on a semiconductor wafer that is relatively easy to warp, even if the viscosity is reduced by the heat from the die bonding table, and the semiconductor wafer is warped, the semiconductor wafer is not easily peeled off. Also, if the above-mentioned viscosity is 100000Pa. s or less, even after hardening, the bonding reliability with a to-be-adhered body or the bonding reliability between semiconductor wafers is more excellent.

In addition, the filler in the adhesive layer is preferably silicon dioxide with an average particle size of 70 to 300 nm. The above-mentioned average particle size is relatively smaller than the average particle size of the filler commonly used in the adhesive layer in the slicing die-bonding film. If using dioxide with an average particle size of less than 300nm which is relatively smaller than usual When silicon is used as the above-mentioned filler, the surface area of the filler in the adhesive layer is larger, and it is presumed that the effect of the reaction accelerator during storage is suppressed by trapping the reaction accelerator by the filler, and the storage stability is better. In addition, if silica having an average particle diameter of 70 nm or more is used as the above-mentioned filler, the hardening property of the adhesive layer is improved, and the hardening ratio of the adhesive layer obtained by heating under the condition of a relatively short time is improved. easy to get bigger. In addition, the wettability and adhesiveness to a substrate such as a semiconductor wafer are further improved.

The dicing die-bonding film of the present invention has an adhesive layer that is excellent in storage stability, can be cured in a short time, and can perform appropriate wire bonding after curing. Therefore, when a semiconductor wafer with an adhesive layer obtained by using the dicing die-bonding film of the present invention is applied to a multi-stage build-up semiconductor device having an overhang, it has excellent storage stability and can be cured in a short time. Furthermore, it is possible to suppress the shaking of the overhang caused by the vibration generated by the ultrasonic wave or the load generated by the pressurization of the overhang at the time of wire bonding, so that the overhang can be properly wire bonded.

In addition, from the viewpoint of storage stability, the cut crystal sticky film is generally stored under refrigeration, but in this case, it is necessary to return to normal temperature during use. Therefore, in the case of refrigerated storage, time for returning to normal temperature is required, and productivity decreases. On the other hand, the crystal-cut sticky film of the present invention also has excellent storage stability at room temperature, does not need to be returned to room temperature during use, and is also excellent in productivity.

1: cut crystal sticky film

10: Slicing tape

11: Substrate

12: Adhesive layer

20: Adhesive layer

21: Adhesive layer

30a: Split slot

30A: Semiconductor Wafer

30b: Modified area

30B: Semiconductor wafer divider

30C: Semiconductor Wafer

31: Semiconductor wafer

31a: Semiconductor wafers

31b: Semiconductor wafers

41: Ring box

42: Retainer

43: Jack up components

44: Pin member

45: Adsorption fixture

51: The connected body

52: Bonding wire

53: Sealing resin

R: Irradiated area

T1: Tape for wafer processing

T1a: Adhesive side

T2: Tape for wafer processing

T2a: Adhesive side

T3: Tape for wafer processing

T3a: Adhesive side

W: semiconductor wafer

Wa: side 1

Wb: side 2

FIG. 1 is a schematic cross-sectional view showing an embodiment of the slicing die-bonding film of the present invention.

FIGS. 2( a ) to ( d ) show a method of manufacturing a semiconductor device using the diced die-bonding film shown in FIG. 1 part of the steps.

Figures 3(a) and (b) show steps following the steps shown in Figure 2 .

FIGS. 4( a ) to ( c ) show steps following the steps shown in FIG. 3 .

Figures 5(a) and (b) show steps subsequent to the steps shown in Figure 4 .

FIG. 6 shows the steps following the steps shown in FIG. 5 .

Figures 7(a), (b1), (b2), (c) show steps subsequent to the steps shown in Figure 6 .

FIG. 8 shows a part of steps in a modification of the method for manufacturing a semiconductor device using the diced die attach film shown in FIG. 1 .

FIGS. 9( a ) and ( b ) show a part of steps in a modification of the method for manufacturing a semiconductor device using the diced die-bonding film shown in FIG. 1 .

FIGS. 10( a ) to ( c ) show a part of steps in a modification of the method for manufacturing a semiconductor device using the diced die attach film shown in FIG. 1 .

FIGS. 11( a ) and ( b ) show a part of steps in a modification of the method for manufacturing a semiconductor device using the diced die attach film shown in FIG. 1 .

[Cut crystal sticky film]

The dicing die-bonding film of the present invention includes: a dicing tape having a laminated structure including a base material and an adhesive layer; and an adhesive layer releasably adhering to the adhesive layer in the dicing tape. Hereinafter, one embodiment of the dicing die-bonding film of the present invention will be described. FIG. 1 is a schematic cross-sectional view showing an embodiment of the crystal-cut die-bonding film of the present invention.

As shown in FIG. 1 , the dicing adhesive film 1 includes a dicing tape 10 and an adhesive layer laminated in the dicing tape 10 . The adhesive layer 20 on the adhesive layer 12 can be used in the fabrication of semiconductor devices as an extension step in the process of obtaining a semiconductor wafer to which the adhesive layer is attached. In addition, the dicing die-bonding film 1 has a disk shape corresponding to the size of the semiconductor wafer to be processed in the manufacturing process of the semiconductor device. The diameter of the dicing die-bonding film 1 is, for example, in the range of 345-380mm (for 12-inch wafers), 245-280mm (for 8-inch wafers), and 195-230mm (for 6-inch wafers). 1-inch wafer type), or within the range of 495~530mm (18-inch wafer type). The dicing tape 10 in the dicing die attach film 1 has a laminated structure including a substrate 11 and an adhesive layer 12 .

(adhesive layer)

The adhesive layer 20 has a function as an adhesive that exhibits thermosetting properties for die bonding, and also has an adhesive function for holding workpieces such as semiconductor wafers and frame members such as ring frames as necessary. The adhesive layer 20 can be cut by applying tensile stress, and is used after being cut by applying tensile stress.

The adhesive layer 20 and the adhesive forming the adhesive layer 20 contain a thermosetting component, a filler, and a hardening accelerator. As the thermosetting component, at least one of a thermosetting resin and a thermoplastic resin having a curable functional group capable of reacting with a curing agent to form a bond (thermosetting functional group-containing thermoplastic resin) is preferred . That is, the above-mentioned thermosetting component is preferably a thermosetting resin and/or a thermosetting functional group-containing thermoplastic resin. The adhesive layer 20 has a structure in which a thermosetting resin or a thermoplastic resin containing a thermosetting functional group is used as a thermosetting component, which has excellent storage stability, can be cured in a short time, and can be appropriately wired after curing. (especially proper wire bonding for overhangs). When the adhesive layer 20 contains a thermosetting resin as the above-mentioned thermosetting component, in addition to the thermosetting resin, for example, a thermosetting resin may be included. A thermoplastic resin that is an adhesive component. When the adhesive layer 20 contains a thermoplastic resin containing a thermosetting functional group, the adhesive layer 20 does not need to contain a thermosetting resin (epoxy resin, etc.). The adhesive layer 20 may have a single-layer structure or a multi-layer structure.

As said thermosetting resin, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, a thermosetting polyimide resin, etc. are mentioned, for example. As for the said thermosetting resin, only 1 type may be used, and 2 or more types may be used for it. The above-mentioned thermosetting resin is preferably an epoxy resin for the reason that the content of ionic impurities, etc., which may cause corrosion of the semiconductor wafer to be bonded to the die, tends to be small. Moreover, as a hardening|curing agent of an epoxy resin, a phenol resin is preferable.

As said epoxy resin, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, pyrene epoxy resin type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoin type, triglycidyl isocyanurate type, glycidylamine type epoxy resin Wait. Among them, preferred are novolac-type epoxy resins, biphenyl-type epoxy resins, trihydroxyphenylmethane-type epoxy resins, and tetraphenols in terms of being rich in reactivity with phenol resins as hardeners and excellent in heat resistance Ethane epoxy resin.

As a phenol resin which can be used as a hardening|curing agent of an epoxy resin, a novolac-type phenol resin, a resol-type phenol resin, polyhydroxystyrene, such as polyparahydroxystyrene, etc. are mentioned, for example. As a novolak-type phenol resin, a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a t-butylphenol novolak resin, a nonylphenol novolak resin, etc. are mentioned, for example. superior Only one type of the phenol resin may be used, or two or more types may be used. Among them, phenol novolac resins and phenol aralkyl resins are preferred from the viewpoint of the tendency to improve the connection reliability of the adhesive when used as a hardener for epoxy resins for die bonding. .

In the adhesive layer 20, from the viewpoint of sufficiently advancing the curing reaction of the epoxy resin and the phenol resin, the phenol resin is based on the amount of the phenol resin per 1 equivalent of epoxy groups in the epoxy resin component. The hydroxyl group is preferably contained in an amount of 0.5 to 2.0 equivalents, more preferably 0.7 to 1.5 equivalents.

When the adhesive layer 20 contains a thermosetting resin, the content ratio of the thermosetting resin is preferably 10 to 70 mass %, more preferably 20 to 60 mass % with respect to the total mass of the adhesive layer 20 . If the content ratio is 10% by mass or more, the adhesive layer 20 can easily and appropriately function as a thermosetting adhesive, and the storage modulus of elasticity can be increased, so that suitable wire bonding (especially for bonding) can be easily achieved. appropriate wire bonding of the overhang). If the said content ratio is 70 mass % or less, the said storage elastic modulus is suppressed from becoming too high, and even when a semiconductor wafer is warped in a multi-stage laminated semiconductor device, peeling of the semiconductor wafer is less likely to occur.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutylene Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, PET (polyethylene terephthalate, polyethylene terephthalate) Saturated polyester tree such as ethylene glycol) or PBT (polybutylene terephthalate, polybutylene terephthalate) grease, polyamide imide resin, fluororesin, etc. Only one kind of the above-mentioned thermoplastic resins may be used, or two or more kinds thereof may be used. As the thermoplastic resin, an acrylic resin is preferable for the reason that it is easy to secure the adhesion reliability obtained by the adhesive layer 20 due to the fact that there are few ionic impurities and high heat resistance.

The said acrylic resin is a polymer which contains the structural unit derived from an acrylic monomer (monomer component which has a (meth)acryloyl group in a molecule|numerator) as a structural unit of a polymer. It is preferable that the said acrylic polymer is a polymer which contains the structural unit derived from (meth)acrylate in the mass ratio most. In addition, only one type of acrylic polymer may be used, or two or more types may be used. In addition, in this specification, "(meth)acrylic" means "acrylic" and/or "methacrylic" (either or both of "acrylic" and "methacrylic" ), and others are the same.

As said (meth)acrylate, the (meth)acrylate containing a hydrocarbon group is mentioned, for example. As the hydrocarbon group-containing (meth)acrylate, an alkyl (meth)acrylate, a cycloalkyl (meth)acrylate, an aryl (meth)acrylate, etc. may be mentioned. Examples of the above-mentioned alkyl (meth)acrylate include methyl (meth)acrylate, ethyl, propyl, isopropyl, butyl, isobutyl, 2-butyl, 3-butyl, Amyl, isopentyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, lauryl (lauryl esters), tridecyl esters, tetradecyl esters, hexadecyl esters, octadecyl esters, eicosyl esters, and the like. As said cycloalkyl ester of (meth)acrylic acid, the cyclopentyl ester of (meth)acrylic acid, cyclohexyl ester, etc. are mentioned, for example. As said (meth)acrylic-acid aryl ester, the phenyl ester and benzyl ester of (meth)acrylic acid are mentioned, for example. Only one type of the above-mentioned hydrocarbon group-containing (meth)acrylate may be used, or two or more types may be used. in order to The adhesive layer 20 appropriately exhibits basic properties such as adhesion obtained by utilizing the hydrocarbon group-containing (meth)acrylate, and is used to form the above-mentioned hydrocarbon group-containing (meth)acrylate among the total monomer components of the acrylic resin. The ratio is preferably 40% by mass or more, more preferably 60% by mass or more.

The said acrylic resin may contain the structural unit derived from the other monomer component which can be copolymerized with the said hydrocarbon group-containing (meth)acrylate for the purpose of improvement, such as cohesion force, heat resistance, etc.. Examples of the above-mentioned other monomer components include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid-containing monomers, acrylamide Amine, acrylonitrile and other functional group-containing monomers, etc. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itonic acid, maleic acid, and fumaric acid. , crotonic acid, etc. As said acid anhydride monomer, maleic acid anhydride, itonic acid anhydride, etc. are mentioned, for example. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and 6 (meth)acrylate. -Hydroxyhexyl, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (4-hydroxymethyl) (meth)acrylate Hexyl) methyl ester, etc. As said glycidyl group-containing monomer, glycidyl (meth)acrylate, methyl glycidyl (meth)acrylate, etc. are mentioned, for example. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2-(meth)acrylamido-2-methylpropanesulfonic acid, and (meth)acrylamidopropyl sulfonic acid. Sulfonic acid, sulfopropyl (meth)acrylate, (meth)acryloyloxynaphthalenesulfonic acid, etc. As said phosphoric acid containing monomer, acrylyl phosphate 2-hydroxyethyl etc. are mentioned, for example. Only one type of the above-mentioned other monomer components may be used, or two or more types may be used. In order to appropriately express basic properties such as the adhesiveness obtained by utilizing the hydrocarbon group-containing (meth)acrylate in the adhesive layer 20, the ratios of the above-mentioned other monomer components in the total monomer components used to form the acrylic resin are compared Preferably it is 60 mass % or less, More preferably, it is 40 mass % or less.

When the adhesive layer 20 contains a thermoplastic resin, the content ratio of the thermoplastic resin is preferably 3 to 40 mass %, more preferably 10 to 30 mass % with respect to the total mass of the adhesive layer 20 . If the said content ratio is 3 mass % or more, the said storage elastic modulus is suppressed from becoming too high, and even when a semiconductor wafer is warped in a multi-stage laminated semiconductor device, peeling of the semiconductor wafer is less likely to occur. When the said content ratio is 40 mass % or less, the said storage elastic modulus can be improved relatively, and it becomes easy to implement suitable wire bonding (especially suitable wire bonding for an overhang).

As the above-mentioned thermosetting functional group-containing thermoplastic resin, for example, a thermosetting functional group-containing acrylic resin can be used. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a (meth)acrylate-derived structural unit as the largest structural unit in terms of mass ratio. As this (meth)acrylate, the (meth)acrylate exemplified in the above-mentioned (meth)acrylate of the acrylic resin which forms a thermoplastic resin is mentioned, for example. On the other hand, as a thermosetting functional group in a thermosetting functional group containing acrylic resin, a glycidyl group, a carboxyl group, a hydroxyl group, an isocyanate group etc. are mentioned, for example. Among them, a glycidyl group and a carboxyl group are preferable. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin and a carboxyl group-containing acrylic resin are particularly preferable. Moreover, it is preferable to contain a hardening|curing agent together with the thermosetting functional group containing acrylic resin. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol-based compound as the curing agent, and for example, the above-mentioned various phenol resins can be used.

Regarding the adhesive layer 20 before hardening for die bonding, in order to achieve a certain degree of crosslinking, for example, it is preferable to react with the functional groups at the ends of the molecular chains of the above-mentioned resins which may be contained in the adhesive layer 20. The bonded polyfunctional compound is preliminarily formulated as a crosslinking component in a composition for forming an adhesive layer (adhesive composition). Such a configuration is preferable from the viewpoint of improving the adhesive property of the adhesive layer 20 at high temperature and from the viewpoint of improving heat resistance. As said crosslinking component, a polyisocyanate compound is mentioned, for example. As a polyisocyanate compound, tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5- naphthalene diisocyanate, adducts of polyol and diisocyanate, etc. are mentioned, for example. The content of the cross-linking component in the adhesive composition relative to 100 parts by mass of the resin having the above-mentioned functional group capable of reacting with the cross-linking component to bond, from the viewpoint of improving the cohesive force of the formed adhesive layer 20, 0.05 mass part or more is preferable, and 7 mass parts or less is preferable from a viewpoint of improving the adhesive force of the adhesive bond layer 20 formed. Moreover, as said crosslinking component, other polyfunctional compounds, such as an epoxy resin, can also be used together with a polyisocyanate compound.

The glass transition temperature of the acrylic resin and the thermosetting functional group-containing acrylic resin that can be prepared in the adhesive layer 20 is preferably -40°C to 10°C. Regarding the glass transition temperature of the polymer, the glass transition temperature (theoretical value) calculated based on the following Fox formula can be used. The relationship between the glass transition temperature Tg of the Fox-type polymer and the glass transition temperature Tgi of the homopolymer of each constituent monomer in the polymer. In the following formula of Fox, Tg represents the glass transition temperature (°C) of the polymer, Wi represents the mass fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (°C) of the homopolymer of the monomer i. ). Regarding the glass transition temperature of homopolymers, literature values can be used, for example, in "New Polymer Library 7 Introduction to Synthetic Resins for Coatings" (by Kitaoka Kyosan, Polymer Publishing Society, 1995) or "Acrylic Catalogue (1997 Edition)" )” (Mitsubishi Rayon Co., Ltd.) The glass transition temperatures of various homopolymers are listed. On the other hand, the glass transition temperature of the homopolymer of a monomer can also be calculated|required by the method specifically described in Unexamined-Japanese-Patent No. 2007-51271.

Fox formula 1/(273+Tg)=Σ[Wi/(273+Tgi)]

The adhesive layer 20 contains the filler as described above. Physical properties such as electrical conductivity, thermal conductivity, and elastic modulus of the adhesive layer 20 can be adjusted by blending the filler in the adhesive layer 20 . Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are particularly preferred. Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, and boron nitride. , silicon dioxide (crystalline silicon dioxide, amorphous silicon dioxide, etc.), in addition to aluminum, gold, silver, copper, nickel and other simple metals, or alloys, amorphous carbon black, graphite, and the like. The filler can have various shapes such as spherical, needle, and scale. Only one type of the above-mentioned fillers may be used, or two or more types may be used. As the above-mentioned filler, silicon dioxide is preferable from the viewpoints of low cost and insulating properties because it is easy to adjust the average particle size compared with other fillers, so that it is easy to improve the storage stability.

The above-mentioned filler is preferably a carbon-carbon double bond (especially, a radical polymerizable functional group) that does not have radiation hardening properties on the surface. When the filler has a radiation-hardening carbon-carbon double bond on the surface, it may react with the polymer in the adhesive layer 12 by irradiation with radiation. Therefore, by using the above-mentioned filler of carbon-carbon double bond which does not have radiation hardening properties on the surface, the storage stability is further improved. In addition, in the case where the pickup step described later is performed after the radiation curing of the adhesive layer 12 , the semiconductor wafer 31 with the adhesive layer attached can be more easily picked up from the adhesive layer 12 in the pickup step. As a filler for the carbon-carbon double bond that does not have radiation hardening properties on the surface, it is possible to use Filler without surface treatment.

The average particle size of the above-mentioned filler is preferably 70-300 nm, more preferably 75-250 nm. The above-mentioned average particle size is relatively smaller than the average particle size of the filler commonly used in the adhesive layer in the slicing die-bonding film. If a filler having an average particle diameter of 300 nm or less, which is relatively smaller than usual, is used as the above-mentioned filler, the surface area of the filler in the adhesive layer is large, and it is presumed that the reaction accelerator during storage is suppressed by trapping the reaction accelerator by the filler. As a result, the storage stability is better. In addition, it is presumed that if a filler having an average particle diameter of 70 nm or more is used as the above-mentioned filler, the capturing of the curing accelerator by the filler becomes appropriate, and the adhesive layer 20 is improved by maintaining the action of the curing accelerator. The hardening ratio of the adhesive layer 20 obtained by heating under a relatively short-time heating condition tends to be larger. In addition, the wettability and adhesiveness to an adherend such as a semiconductor wafer are further improved. In addition, the average particle diameter of a filler was calculated|required as follows. The cured adhesive layer 20 is embedded in the resin, so that the cross-section of the adhesive layer is exposed from the embedded resin, and the cross-section is subjected to ion grinding processing by a CP (cross section polisher) processing device, and then implemented Conduct conductive treatment, and perform FE-SEM (Field Emission-Scanning Electron Microscope, Field Emission Scanning Electron Microscope) observation to obtain a backscattered electron image. Divide the area of the filler in the captured image by the number of fillers in the image, The average area of the filler was obtained, and this was taken as the average particle size of the filler. In particular, the above-mentioned filler is preferably silica having an average particle size within the above-mentioned range.

The content ratio of the filler in the adhesive layer 20 is preferably 3 to 60 mass %, more preferably 20 to 50 mass % with respect to the total mass of the adhesive layer 20 . If the content ratio is 3 mass % or more, the adhesive layer 20 can be easily cut in the cold stretching step to be described later. In the pick-up step, the semiconductor wafer with the adhesive layer can be picked up better. If the said content ratio is 60 mass % or less, the adhesiveness with the adhesive bond layer 12, and the adhesiveness between semiconductor wafers or a to-be-adhered body and a semiconductor wafer will become more favorable.

、2,4-二胺基-6-[2'-十一烷基咪唑基-(1')]-乙基-s-三

、2,4-二胺基-6-[2'-乙基-4'-甲基咪唑基-(1')]-乙基-s-三

、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-s-三

異氰尿酸加成物、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑等。作為三苯基膦系化合物，例如可列舉三苯基膦、三(對甲基苯基)膦、三(壬基苯基)膦、二苯基甲苯基膦、溴化四苯基鏻、甲基三苯基鏻、氯化甲基三苯基鏻、甲氧基甲基三苯基鏻、氯化苄基三苯基鏻等。三苯基膦系化合物亦包含一併具有三苯基膦結構與三苯基硼結構之化合物。作為此種化合物，例如可列舉四苯基硼酸四苯基鏻、四對三硼酸四苯基鏻、四苯基硼酸苄基三苯基鏻、三苯基膦三苯基硼烷等。作為胺系化合物，例如可列舉單乙醇胺三氟硼酸酯、雙氰胺等。作為三鹵化硼系化合物，例如可列舉三氯 化硼等。硬化促進劑可僅使用一種，亦可使用兩種以上。 The adhesive layer 20 contains a hardening accelerator as described above. By mixing a hardening accelerator into the adhesive layer 20 , the hardening reaction of the thermosetting component can be sufficiently advanced or the hardening reaction rate can be increased when the adhesive layer 20 is hardened. As said hardening accelerator, an imidazole type compound, a triphenylphosphine type compound, an amine type compound, a boron trihalide type compound etc. are mentioned, for example. Examples of the imidazole-based compound include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methyl Imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methyl] imidazolyl-(1')]-ethyl-s-tris

, 2,4-Diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-s-tri

, 2,4-Diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-tri

, 2,4-Diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-tri

Isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, etc. Examples of the triphenylphosphine-based compound include triphenylphosphine, tris(p-methylphenyl)phosphine, tris(nonylphenyl)phosphine, diphenyltolylphosphine, tetraphenylphosphonium bromide, methylbenzene triphenylphosphonium chloride, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, benzyltriphenylphosphonium chloride, etc. The triphenylphosphine-based compounds also include compounds having both a triphenylphosphine structure and a triphenylboron structure. As such a compound, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-triborate, benzyltriphenylphosphonium tetraphenylborate, triphenylphosphine triphenylborane, etc. are mentioned, for example. As an amine compound, a monoethanolamine trifluoroborate, dicyandiamide, etc. are mentioned, for example. As a boron trihalide type compound, boron trichloride etc. are mentioned, for example. Only one type of hardening accelerator may be used, or two or more types may be used.

The content of the curing accelerator in the adhesive layer 20 is preferably 0.15 to 10 parts by mass, more preferably 0.2 to 3 parts by mass, relative to 100 parts by mass of the thermosetting component. If the said content is 0.15 mass part or more, the effect of a hardening accelerator is exhibited more fully, and the hardening of the adhesive layer 20 by the heating under a relatively short-time heating condition is easy to progress more substantially. Storage stability is more excellent as the said content is 10 mass parts or less.

The subsequent agent layer 20 may also contain other components as required. As said other components, a flame retardant, a silane coupling agent, an ion scavenger, a dye, etc. are mentioned, for example. As said flame retardant, antimony trioxide, antimony pentoxide, brominated epoxy resin, etc. are mentioned, for example. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyl Diethoxysilane, etc. Examples of the ion scavenger include hydrotalcites, bismuth hydroxide, hydrous antimony oxide (for example, "IXE-300" manufactured by Toagosei Co., Ltd.), and zirconium phosphate with a specific structure (for example, manufactured by Toagosei Corporation). "IXE-100"), magnesium silicate (such as "KYOWAAD 600" manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (such as "KYOWAAD 700" manufactured by Kyowa Chemical Industry Co., Ltd.), etc. Compounds capable of forming complexes with metal ions can also be used as ion scavengers. As such a compound, a triazole type compound, a tetrazole type compound, and a bipyridine type compound are mentioned, for example. Among these, from the viewpoint of the stability of the complex formed with the metal ion, a triazole-based compound is preferred. Examples of such triazole-based compounds include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, and carboxybenzotriazole. Triazole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5- Di-tert-butylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-( 2-Hydroxy-3,5-di-tert-pentylphenyl)benzotriazole, 2-(2-hydroxy-5-tert-octylphenyl)benzotriazole, 6-(2-benzotriazole azolyl)-4-tert-octyl-6'-tert-butyl-4'-methyl-2,2'-methylenebisphenol, 1-(2',3'-hydroxypropyl)benzene Triazole, 1-(1,2-dicarboxydiethyl)benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-tert-pentyl- 6-{(H-benzotriazol-1-yl)methyl}phenol, 2-(2-hydroxy-5-tert-butylphenyl)-2H-benzotriazole, 3-[3-tert-butylphenyl)- Tributyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionic acid 2-ethylhexyl ester, 2-(2H-benzotriazole-2- base)-6-(1-methyl-1-phenylethyl)-4-(1,1,3,3-tetramethylbutyl)phenol, 2-(2H-benzotriazole-2- yl)-4-tert-butylphenol, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-5-tert-octylphenyl)-benzotriazole azole, 2-(3-tert-butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-pentylphenyl) ) benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chloro-benzotriazole, 2-[2-hydroxy-3,5-bis(1, 1-Dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazol-2-yl)-4-(1,1 ,3,3-tetramethylbutyl)phenol], 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl]-2H-benzotriazole, 3- [3-(2H-benzotriazol-2-yl)-5-tert-butyl-4-hydroxyphenyl]propionic acid methyl ester, etc. Moreover, a hydroquinone compound, or a specific hydroxyl group-containing compound, such as a hydroxyanthraquinone compound, a polyphenol compound, can also be used as an ion scavenger. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthracenol, tannin, gallic acid, methyl gallate, pyrogallol, and the like. Only one type of the above-mentioned other additives may be used, or two or more types may be used.

The thickness of the adhesive layer 20 (the total thickness in the case of a layered product) is not particularly limited, but is, for example, 1 to 200 μm. The upper limit is preferably 100 μm, more preferably 80 μm. The lower limit is preferably 3 μm, more preferably 5 μm.

The adhesive layer 20 was heated at 130° C. for 30 minutes as described above, and the heat release measured by DSC was 60% or less of the heat release before heating. That is, [the amount of heat release measured by DSC after heating at 130° C. for 30 minutes (J/g)/the amount of heat release before heating (J/g)×100] (%) was 60% or less. This means that 60% or more of the uncured thermosetting components in the adhesive layer before heating are cured by heating at 130° C. for 30 minutes. By making the adhesive layer in the dicing die-bonding film of the present invention to have the above-mentioned constitution, the hardening ratio of the adhesive layer obtained by heating under a relatively short-time heating condition is large, so that the adhesive layer can be It can be hardened in a short time, and the storage elastic modulus can be increased in a short time. Moreover, since the hardening ratio of the adhesive layer obtained by heating under a relatively short-time heating condition is large, hardening is not easy to generate|occur|produce before heating even during storage, that is, it is excellent in storage stability. The heat release measured by DSC after heating at 130° C. for 30 minutes is preferably 50% or less of the heat release before heating, more preferably 40% or less. The lower limit can be 0% or 10%.

The exothermic heat measured by DSC before the heating of the adhesive layer 20 is preferably 20-500 J/g, more preferably 50-300 J/g. If the above-mentioned heat release amount is 20 J/g or more, the adhesive layer 20 can be hardened more significantly by heating under a relatively short-time heating condition. If the above-mentioned heat release is 500 J/g or less, the adhesive force on the surface of the adhesive layer 20 can be ensured to a certain extent, and the adhesiveness to the semiconductor wafer and the semiconductor wafer is excellent during the use of the dicing die-bonding film.

The exothermic heat of the adhesive layer 20 measured by DSC after being heated at 130° C. for 30 minutes is preferably 5-60 J/g, more preferably 10-50 J/g. If the above-mentioned heat release amount is 5 J/g or more, the sealing resin can be hardened at one time in the sealing step after the wire bonding step. If the above-mentioned heat release amount is 60 J/g or less, the adhesive layer 20 can be hardened by heating under a relatively short-time heating condition. change more substantially.

The heat release measured by DSC is the total heat release [J/g] when the adhesive layer 20 is heated from 0°C to 350°C at a temperature increase rate of 10°C/min using a differential scanning calorimeter. The mass of the adhesive layer 20 used for the DSC measurement is, for example, 10 to 15 mg.

The heat release before heating and the heat release after heating at 130° C. for 30 minutes measured by DSC can be determined by the ratio of the thermosetting components in the adhesive layer 20, the amount of the hardening accelerator, the ratio of the filler, and the particle size. controlled by the diameter. Specifically, as the ratio of the thermosetting component increases, the amount of heat generated before heating tends to increase. The larger the amount of the hardening accelerator, the greater the progress of hardening in a relatively short period of time, so the heat release after heating at 130°C for 30 minutes tends to be small. It is presumed that the smaller the ratio of the filler and the larger the particle size of the filler, the smaller the amount of the hardening accelerator captured, the progress of hardening in a relatively short period of time, and the heat release after heating at 130°C for 30 minutes is small. tendency.

As described above, the adhesive layer 20 has a storage elastic modulus at 130° C. after the above heating of 20 MPa or more and 4000 MPa or less. By setting the storage elastic modulus after the heating to 20 MPa or more, the adhesive layer can be hardened in a short time, and has a certain degree of hardness after hardening, so that appropriate wire bonding can be performed after hardening. In particular, even when the above-mentioned adhesive layer is used in a multi-layered semiconductor device having overhangs, it is possible to suppress loads caused by vibrations generated by ultrasonic waves or pressure applied to the overhangs during wire bonding. The shaking of the overhang can properly wire the overhang. Moreover, by making the storage elastic modulus after the said heating into 4000 MPa or less, even after hardening, it is excellent in the adhesion reliability with a to-be-adhered body or the adhesion reliability between semiconductor wafers. The upper limit of the above storage elastic modulus may be 2000 MPa, may be 1000MPa, may be 500MPa.

The storage elastic modulus above is the dynamic storage elastic modulus at 130°C measured in tensile mode using a viscoelasticity measuring device under the conditions of a frequency of 1 Hz, an initial distance between the clamps of 10 mm, and a strain of 0.1%.

The above-mentioned storage elastic modulus can be controlled by the ratio of the thermosetting component in the adhesive layer 20, the ratio of the thermoplastic resin, the amount of the hardening accelerator, the ratio of the filler, and the like. Specifically, as the ratio of the thermosetting component, the amount of the curing accelerator, and the ratio of the filler are increased, the adhesive layer 20 after heating tends to be harder, and thus the storage elastic modulus tends to be higher. On the other hand, as the ratio of the thermoplastic resin increases, the adhesive layer 20 after heating becomes softer, and therefore, the storage elastic modulus tends to decrease.

The viscosity of the adhesive layer 20 at 90°C is preferably 300~100000Pa. s. The above-mentioned multi-stage build-up semiconductor device generally has many circuit layers, so that the semiconductor wafer is likely to be greatly warped, and the semiconductor wafer tends to be easily peeled due to this. However, if the viscosity of the adhesive layer 20 at 90°C is 300Pa. When the value is more than s, when the die bonding is performed on a semiconductor wafer that is relatively easy to warp, even if the viscosity is reduced by the heat from the die bonding table, and the semiconductor wafer is warped, the semiconductor wafer is not easily peeled off. Also, if the above-mentioned viscosity is 100000Pa. s or less, even after hardening, the bonding reliability with a to-be-adhered body or the bonding reliability between semiconductor wafers is more excellent. The above viscosity is preferably 500~50000Pa. s, more preferably 1000~40000Pa. s. Moreover, it is preferable that the viscosity at 90 degreeC of the adhesive layer 20 after storing at 23 degreeC for 28 days is in the said range. The above viscosity is based on the gap of 100μm, the diameter of the turntable 8mm, the heating rate of 10℃/min, the strain of 10%, the frequency of 5 The value measured by a rotational viscometer under the condition of rad/sec.

The rate of increase of the viscosity at 90°C after the adhesive layer 20 was stored at 23°C for 28 days (viscosity increase rate) [{Viscosity at 90°C after storage at 23°C for 28 days (Pa.s) - 90°C The viscosity (Pa.s)}/the viscosity at 90°C (Pa.s)×100](%) is preferably less than 150%, more preferably less than 100%. If the increase rate of the above-mentioned viscosity is less than 150%, the storage stability is more excellent. The lower limit of the increase rate of the above-mentioned viscosity may also be 0%.

(substrate)

The substrate 11 in the dicing tape 10 is an element that functions as a support in the dicing tape 10 or the dicing film 1 . As the base material 11, a plastic base material (especially a plastic film) is mentioned, for example. The above-mentioned base material 11 may be a single layer, or may be a laminate of the same kind or different kinds of base material.

Examples of the resin constituting the plastic base material include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, and block copolymerization. Polypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate Polyolefin resins such as (random, alternating) copolymers, ethylene-butene copolymers, and ethylene-hexene copolymers; polyurethane; polyethylene terephthalate (PET), polyethylene naphthalate Polyester such as ethylene glycol and polybutylene terephthalate (PBT); polycarbonate; polyimide; polyether ether ketone; polyether imide; aromatic polyamide, fully aromatic polyamide Polyamide such as amine; polyphenylene sulfide; fluororesin; polyvinyl chloride; polyvinylidene chloride; cellulose resin; polysiloxane, etc. In order to maintain good thermal shrinkage in the base material 11, it is easy to use the dicing tape in the room temperature stretching step described later. The substrate 11 preferably contains an ethylene-vinyl acetate copolymer as a main component from the viewpoint of maintaining the distance between the wafers by local thermal shrinkage of the substrate 10 or the substrate 11 . In addition, the main component of the base material 11 means the component which occupies the largest mass ratio among the constituent components. Only one kind of the above-mentioned resins may be used, or two or more kinds thereof may be used. When the adhesive layer 12 is a radiation-curable adhesive layer as described below, the substrate 11 preferably has radiation permeability.

When the substrate 11 is a plastic film, the plastic film may not be aligned, or may be aligned in at least one direction (uniaxial direction, biaxial direction, etc.). When aligned in at least one direction, the plastic film can be thermally shrunk in the at least one direction. If it has thermal shrinkage, the outer peripheral portion of the semiconductor wafer of the dicing tape 10 can be thermally shrunk, whereby the space between the semiconductor wafers of the singulated adhesive layer can be fixed in an enlarged state, Therefore, the pickup of the semiconductor wafer can be easily performed. In order to make the base material 11 and the dicing tape 10 have isotropic thermal shrinkage, the base material 11 is preferably a biaxially oriented film. Furthermore, the above-mentioned plastic film aligned in at least one direction can be obtained by extending the unstretched plastic film in the at least one direction (uniaxial stretching, biaxial stretching, etc.). The thermal shrinkage rate in the heat treatment test performed under the conditions of the heating temperature of the substrate 11 and the dicing tape 10 of 100° C. and the heating time of 60 seconds is preferably 1 to 30%, more preferably 2 to 25%, and more The preferred range is 3~20%, and the most preferred range is 5~20%. The above-mentioned thermal shrinkage rate is preferably the thermal shrinkage rate in at least one of the MD (machine direction, longitudinal direction) direction and the TD (tranverse direction, transverse direction) direction.

The side surface of the adhesive layer 12 of the substrate 11 can also be subjected to corona discharge treatment, plasma treatment, frosting treatment, ozone exposure treatment, flame exposure treatment for the purpose of improving the adhesion and retention of the adhesive layer 12. , high voltage electric shock exposure treatment, ionizing radiation treatment and other physical treatments Chemical treatment such as chromic acid treatment; Surface treatment such as easy bonding treatment using coating agent (primer). In addition, in order to impart antistatic ability, a conductive vapor deposition layer including metals, alloys, oxides of these, and the like may also be provided on the surface of the base material 11 . The surface treatment for improving the adhesiveness is preferably performed on the entire surface of the base material 11 on the side of the adhesive layer 12 .

The thickness of the base material 11 is preferably 40 μm or more, more preferably 50 μm or more, from the viewpoint of securing the strength for the base material 11 to function as a support in the dicing tape 10 and the dicing die attach film 1 . , more preferably 55 μm or more, particularly preferably 60 μm or more. In addition, from the viewpoint of realizing moderate flexibility in the dicing tape 10 and the dicing die attach film 1, the thickness of the substrate 11 is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 μm or less .

(adhesive layer)

The adhesive layer 12 in the dicing die attach film 1 can be an adhesive layer that can intentionally reduce the adhesive force due to the action from the outside during the use of the dicing die adhesive film 1 (the adhesive force of the adhesive layer can be reduced. ), or it can be an adhesive layer (adhesive layer with non-reduced adhesive force) whose adhesive force is almost or not reduced by external action during the use of the dicing die-bonding film 1. The method and conditions of the singulation of the semiconductor wafer from which the wafer 1 is singulated are appropriately selected.

When the adhesive layer 12 is an adhesive layer with a reduced adhesive force, the state of the adhesive layer 12 showing a relatively high adhesive force can be displayed during the manufacturing process or the use process of the die-cut adhesive film 1 . The state of relatively low adhesion is used separately. For example, when the adhesive layer 20 is attached to the adhesive layer 12 of the dicing tape 10 during the manufacturing process of the dicing die-bonding film 1 , or when the dicing die-bonding film 1 is used in the dicing step, the adhesive can be used The agent layer 12 exhibits relatively high adhesion state inhibition /preventing the adhesive layer 20 and the like from being raised from the adhesive layer 12 by the adhesive, on the other hand, after that, a pickup step for picking up the semiconductor wafer with the adhesive layer attached to the dicing tape 10 of the self dicing die-bonding film 1 Among them, it can be easily picked up by reducing the adhesive force of the adhesive layer 12 .

As an adhesive which forms such an adhesive force-reducing type adhesive layer, a radiation curable adhesive, a heating foaming type adhesive, etc. are mentioned, for example. As an adhesive for forming an adhesive force-reducing type adhesive layer, one type of adhesive may be used, or two or more types of adhesive may be used.

As the above-mentioned radiation-curable adhesive, for example, those hardened by irradiation with electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used, and particularly, those cured by irradiation with ultraviolet rays can be preferably used Hardening type of adhesive (UV-curable adhesive).

Examples of the radiation curable adhesive include addition of a radiation polymerizable monomer component or oligomer component containing a base polymer such as an acrylic polymer, and a radiation polymerizable functional group such as a radiation polymerizable carbon-carbon double bond. Type of radiation curable adhesive.

The said acrylic polymer is a polymer which contains the structural unit derived from an acrylic monomer (monomer component which has a (meth)acryloyl group in a molecule|numerator) as a structural unit of a polymer. It is preferable that the said acrylic polymer is a polymer which contains the structural unit derived from (meth)acrylate in the mass ratio most. In addition, only one type of acrylic polymer may be used, or two or more types may be used.

As said (meth)acrylate, the (meth)acrylate containing a hydrocarbon group is mentioned, for example. do Examples of the hydrocarbon group-containing (meth)acrylate include those exemplified above as the structural unit of the acrylic resin as the thermoplastic resin that can be contained in the adhesive layer 20 . Only one type of the above-mentioned hydrocarbon group-containing (meth)acrylate may be used, or two or more types may be used. The hydrocarbon group-containing (meth)acrylic acid among the total monomer components used to form the acrylic polymer is used to appropriately express basic properties such as the adhesiveness obtained by utilizing the hydrocarbon group-containing (meth)acrylate in the adhesive layer 12 . The ratio of the ester is preferably 40% by mass or more, more preferably 60% by mass or more.

The said acrylic polymer may contain the structural unit derived from the other monomer component which can be copolymerized with the said hydrocarbon group containing (meth)acrylate for the purpose of improvement, such as cohesion force, heat resistance, etc.. As said other monomer component, what was illustrated in the structural unit of the acrylic resin which is the thermoplastic resin which can be contained in the adhesive layer 20 mentioned above is mentioned. Only one type of the above-mentioned other monomer components may be used, or two or more types may be used. The total ratio of the above-mentioned other monomer components in the total monomer components used to form the acrylic polymer in order to appropriately express basic properties such as adhesiveness obtained by utilizing the hydrocarbon group-containing (meth)acrylate in the adhesive layer 12 Preferably it is 60 mass % or less, More preferably, it is 40 mass % or less.

The said acrylic polymer may contain the structural unit derived from the polyfunctional monomer which can be copolymerized with the monomer component which forms an acrylic polymer in order to form a crosslinked structure in the polymer backbone. As said polyfunctional monomer, for example, hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl Glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate , epoxy (meth)acrylates (such as polyglycidyl (meth)acrylate), polyester (meth)acrylates, (methyl) (meth)acryloyl group and other reactive functional groups in the molecule, etc. Only one type of the above-mentioned polyfunctional monomer may be used, or two or more types may be used. The ratio of the above-mentioned polyfunctional monomer in the total monomer components used to form the acrylic polymer in order to appropriately express basic properties such as adhesiveness obtained by utilizing the hydrocarbon group-containing (meth)acrylate in the adhesive layer 12 Preferably it is 40 mass % or less, More preferably, it is 30 mass % or less.

The acrylic polymer is obtained by polymerizing one or more monomer components including an acrylic monomer. As a polymerization method, solution polymerization, emulsion polymerization, block polymerization, suspension polymerization, etc. are mentioned.

The mass average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000. If the mass average molecular weight is 100,000 or more, there is a tendency that the low molecular weight substances in the adhesive layer are less, and contamination of the adhesive layer, the semiconductor wafer, etc. can be further suppressed.

The adhesive layer 12 or the adhesive forming the adhesive layer 12 may also contain a crosslinking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be cross-linked to further reduce low molecular weight substances in the adhesive layer 12 . In addition, the mass average molecular weight of the acrylic polymer can be increased. As said crosslinking agent, a polyisocyanate compound, an epoxy compound, a polyol compound (polyphenol type compound etc.), an aziridine compound, a melamine compound etc. are mentioned, for example. When a crosslinking agent is used, its usage amount is preferably 5 parts by mass or less with respect to 100 parts by mass of the base polymer, more preferably 0.1 to 5 parts by mass.

As said radiation polymerizable monomer component, (meth)acrylate aminomethyl, for example is mentioned acid ester, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate Meth)acrylate, 1,4-butanediol di(meth)acrylate, etc. Examples of the radiation polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers. 100~30000 or so. The content of the radiation-curable monomer component and oligomer component in the radiation-curable adhesive forming the adhesive layer 12 is, relative to 100 parts by mass of the base polymer, for example, 5 to 500 parts by mass, preferably 40 parts by mass ~150 parts by mass. Moreover, as an additive type radiation curable adhesive, what is disclosed in Unexamined-Japanese-Patent No. 60-196956 can be used, for example.

Examples of the radiation-curable adhesive include an encapsulated type of a base polymer containing functional groups such as a polymer side chain or a polymer main chain and a polymer main chain terminal having a radiation polymerizable carbon-carbon double bond. The radiation curable adhesive. The use of such an encapsulated radiation-curable adhesive tends to suppress unexpected changes in adhesive properties over time due to migration of low-molecular-weight components in the formed adhesive layer 12 .

The base polymer contained in the above-mentioned encapsulated radiation-curable adhesive is preferably an acrylic polymer. As a method of introducing a radiation polymerizable carbon-carbon double bond into an acrylic polymer, for example, a method of obtaining an acrylic polymer by polymerizing (copolymerizing) a raw material monomer including a monomer component having a first functional group may be mentioned. Then, a compound having a second functional group that can react with the first functional group and a radiation polymerizable carbon-carbon double bond is treated with the acrylic polymer under the condition that the radiation polymerizability of the carbon-carbon double bond remains unchanged. A condensation reaction or an addition reaction is carried out.

Examples of the combination of the first functional group and the second functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridine group, an aziridine group and a carboxyl group, and a hydroxyl group and an isocyanate group. , isocyanate groups and hydroxyl groups. Among these, the combination of a hydroxyl group and an isocyanato group, and the combination of an isocyanato group and a hydroxyl group are preferable from the viewpoint of the easiness of reaction tracing. Among them, the technical difficulty of producing a polymer having a highly reactive isocyanate group is relatively high, and on the other hand, from the viewpoint of the easiness of producing and obtaining an acrylic polymer having a hydroxyl group, the preferred The said 1st functional group is a combination of a hydroxyl group, and the said 2nd functional group is an isocyanate group. Examples of compounds having an isocyanato group and a radiopolymerizable carbon-carbon double bond, that is, a radiopolymerizable unsaturated functional group-containing isocyanate compound, include, for example, methacryloyl isocyanate and 2-methyl isocyanate. Acryloyloxyethyl ester, m-isopropenyl-α,α-dimethylbenzyl isocyanate, etc. In addition, examples of the acrylic polymer having a hydroxyl group include those derived from the aforementioned hydroxyl group-containing monomers, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, and the like. The structural unit of ether compounds.

系化合物、樟腦醌、鹵代酮、醯基膦氧化物、醯基磷酸酯等。作為上述α-酮醇系化合物，例如可列舉4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等。作為上述苯乙酮系化合物，例如可列舉甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1- [4-(甲硫基)-苯基]-2-嗎啉基丙烷-1等。作為上述安息香醚系化合物，例如可列舉安息香乙醚、安息香異丙醚、大茴香偶姻甲醚等。作為上述縮酮系化合物，例如可列舉苯偶醯二甲基縮酮等。作為上述芳香族磺醯氯系化合物，例如可列舉2-萘磺醯氯等。作為上述光活性肟系化合物，例如可列舉1-苯基-1,2-丙烷二酮-2-(O-乙氧基羰基)肟等。作為上述二苯甲酮系化合物，例如可列舉二苯甲酮、苯甲醯基苯甲酸、3,3'-二甲基-4-甲氧基二苯甲酮等。作為上述9-氧硫

系化合物，例如可列舉9-氧硫

、2-氯9-氧硫

、2-甲基9-氧硫

、2,4-二甲基9-氧硫

、異丙基9-氧硫

、2,4-二氯9-氧硫

、2,4-二乙基9-氧硫

、2,4-二異丙基9-氧硫

等。放射線硬化性黏著劑中之光聚合起始劑之含量相對於基礎聚合物100質量份例如為0.05~20質量份。 It is preferable that the said radiation curable adhesive contains a photopolymerization initiator. Examples of the above-mentioned photopolymerization initiator include α-ketol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, aromatic sulfonyl chloride-based compounds, photoactive oxime-based compounds, and diphenylene compounds. ketone compounds, 9-oxosulfur

Series compounds, camphorquinone, halogenated ketones, acylphosphine oxides, acyl phosphates, etc. As said α-ketoalcohol-type compound, 4-(2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α,α'-dimethyl styrene, for example ketone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone, etc. Examples of the acetophenone-based compound include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, and 2-methyl acetophenone. base-1-[4-(methylthio)-phenyl]-2-morpholinopropane-1 and the like. As said benzoin ether type compound, benzoin ether, benzoin isopropyl ether, anisin methyl ether, etc. are mentioned, for example. As said ketal type compound, benzil dimethyl ketal etc. are mentioned, for example. As said aromatic sulfonyl chloride type compound, 2-naphthalenesulfonyl chloride etc. are mentioned, for example. As said photoactive oxime type compound, 1-phenyl- 1, 2- propanedione-2-(O-ethoxycarbonyl) oxime etc. are mentioned, for example. As said benzophenone type-compound, benzophenone, benzoyl benzoic acid, 3,3'- dimethyl- 4-methoxy benzophenone etc. are mentioned, for example. As the above-mentioned 9-oxosulfur

series compounds, for example, 9-oxosulfur

, 2-chloro-9-oxosulfur

, 2-methyl 9-oxothio

, 2,4-dimethyl 9-oxothio

, isopropyl 9-oxothio

, 2,4-dichloro-9-oxosulfur

, 2,4-diethyl 9-oxothio

, 2,4-diisopropyl 9-oxothio

Wait. The content of the photopolymerization initiator in the radiation-curable adhesive is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer.

The above-mentioned heating-foaming-type adhesive is an adhesive containing a component (foaming agent, heat-expandable microsphere, etc.) which foams or expands by heating. As said foaming agent, various inorganic foaming agents and organic foaming agents are mentioned. As said inorganic foaming agent, ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, azides, etc. are mentioned, for example. Examples of the organic foaming agent include chlorofluoroalkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azobisisobutyronitrile, azodimethylamide, barium azodicarboxylate, etc. Nitrogen compounds; p-toluenesulfohydrazine, diphenyl-3,3'-disulfohydrazine, 4,4'-oxybis(benzenesulfohydrazine), allylbis(sulfohydrazine), etc. Hydrazine-based compounds; amine urea-based compounds such as p-toluenesulfonamide urea and 4,4'-oxybis(benzenesulfonamide urea); 5-morpholino-1,2,3,4-thitriazole, etc. Triazole series compounds; N-nitroso such as N,N'-dinitrosopentamethylenetetramine, N,N'-dimethyl-N,N'-dinitrosoterephthalamide, etc. base compounds, etc. As the heat-expandable microspheres, for example, encapsulated in a shell which is easily vaporized and expanded by heating can be mentioned. Microspheres made up of swollen substances. Examples of the above-mentioned substances that are easily vaporized and expanded by heating include isobutane, propane, and pentane. Heat-expandable microspheres can be produced by encapsulating a substance that is easily vaporized and expanded by heating in a shell-forming substance by a coacervation method, an interfacial polymerization method, or the like. As the above-mentioned shell-forming substance, a substance that exhibits thermal fusion properties, or a substance that can be ruptured by the action of thermal expansion of the encapsulated substance can be used. As such a substance, for example, vinylidene chloride can be cited. Acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysilicon, etc.

As said adhesive force non-decreasing-type adhesive layer, a pressure-sensitive adhesive layer is mentioned, for example. Furthermore, the pressure-sensitive adhesive layer includes an adhesive layer of a form in which the adhesive layer formed of the above-described radiation-curable adhesive with respect to the adhesive force-reducing adhesive layer is preliminarily irradiated with radiation. Hardened and has a certain adhesive force. As the adhesive for forming the adhesive force non-decreasing type adhesive layer, one type of adhesive may be used, or two or more types of adhesive may be used. In addition, the whole of the adhesive layer 12 may be a non-adhesion-reducing type adhesive layer, and a part thereof may be a non-adhesive-reducing type adhesive layer. For example, when the adhesive layer 12 has a single-layer structure, the whole of the adhesive layer 12 can be a non-adhesion-reducing adhesive layer, or a specific part of the adhesive layer 12 (such as the adhesive layer of the ring frame The area to be attached and located outside the central area) is the non-adhesion-reducing adhesive layer, and the other parts (eg, the central area of the attaching target area of the semiconductor wafer) are the adhesive layer that can reduce the adhesive force. In addition, when the adhesive layer 12 has a laminated structure, all the adhesive layers in the laminated structure may be non-adhesive adhesive layers, or a part of the adhesive layers in the laminated structure may be non-adhesive adhesive layers. agent layer.

The adhesive layer formed of the radiation-curable adhesive (irradiated radiation not irradiated Curable adhesive layer) The adhesive layer in the form of being cured by radiation irradiation in advance (radiation-curable adhesive layer by radiation irradiation) shows that even if the adhesive force is lowered by radiation irradiation, it is caused by the polymer component contained The adhesiveness of the dicing tape can exert the minimum required adhesive force of the adhesive layer of the dicing tape in the dicing step and the like. In the case of using a radiation-hardening adhesive layer irradiated with radiation, in the plane direction of the adhesive layer 12, the entire adhesive layer 12 is a radiation-hardening adhesive layer irradiated with radiation, or the adhesive layer may be A part of 12 is a radiation-hardening adhesive layer irradiated with radiation and the other part is a radiation-hardening adhesive layer not irradiated with radiation. Furthermore, in this specification, the so-called "radiation-curable adhesive layer" refers to an adhesive layer formed of a radiation-curable adhesive, including a radiation-curable adhesive layer that is not irradiated with radiation, and Both of the adhesive layers are radiation-cured and radiation-cured adhesive layers after the adhesive layers are cured by irradiation with radiation.

As the adhesive for forming the pressure-sensitive adhesive layer, well-known or conventional pressure-sensitive adhesives can be used, and acrylic adhesives or rubber-based adhesives using an acrylic polymer as a base polymer can be favorably used. In the case where the adhesive layer 12 contains an acrylic polymer as a pressure-sensitive adhesive, the acrylic polymer preferably contains a (meth)acrylate-derived structural unit as the largest structural unit in terms of mass ratio of polymers. As said acrylic polymer, the acrylic polymer demonstrated as the acrylic polymer which can be contained in the radiation curable adhesive of the said additive type can be used, for example.

In addition to the above-mentioned components, the adhesive layer 12 or the adhesive forming the adhesive layer 12 can also be formulated with cross-linking accelerators, adhesion-imparting agents, anti-aging agents, colorants (pigments, dyes, etc.) and other well-known or conventional ones. Additives for adhesive layers. As the above-mentioned coloring agent, for example, irradiation by irradiation can be exemplified. A compound colored by rays. When a compound colored by irradiation with radiation is contained, only the portion irradiated with radiation can be colored. The above-mentioned compounds colored by irradiation with radiation are colorless or light-colored before irradiation with radiation, but compounds colored by irradiation with radiation include, for example, leuco dyes. The usage-amount of the said compound colored by radiation is not specifically limited, It can select suitably.

The thickness of the adhesive layer 12 is not particularly limited, and when the adhesive layer 12 is an adhesive layer formed of a radiation-curable adhesive, the adhesive layer 12 is bonded to the adhesive layer 20 before and after radiation hardening. From the viewpoint of force balance, it is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably 5 to 25 μm.

The die-cut die-attached film 1 may also have an isolation film. Specifically, each dicing die attach film 1 may be in the form of a sheet with an isolation film, or the isolation film may be in a strip shape and a plurality of dicing die attach films 1 are arranged thereon and the isolation film may be in the form of a sheet. The film is wound to form a roll. The isolation film is an element for covering and protecting the surface of the adhesive layer 20 of the dicing die attach film 1 , and is peeled off from the film when the dicing die attach film 1 is used. Examples of the release film include polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent. Cloth, plastic film or paper, etc. The thickness of the separator is, for example, 5 to 200 μm.

The diced die-bond film 1, which is one embodiment of the diced die-bond film of the present invention, is produced, for example, as follows. First, the base material 11 can be obtained by forming a film by a known or conventional film forming method. Examples of the above-mentioned film forming method include a calendering film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

Next, a composition (adhesive composition) for forming an adhesive layer including an adhesive for forming the adhesive layer 12 and a solvent, etc. can be applied on the substrate 11 to form a coating film, and then, if necessary, by removing the solvent or The adhesive layer 12 is formed by curing the coating film by curing or the like. As a method of said coating, well-known or conventional coating methods, such as roll coating, screen coating, and gravure coating, are mentioned, for example. Moreover, as desolvation conditions, for example, it can carry out in the range of temperature 80-150 degreeC, and time 0.5-5 minutes. Moreover, after coating the adhesive composition on the separator to form a coating film, the coating film can be cured under the above-mentioned desolvation conditions to form the adhesive layer 12 . After that, the adhesive layer 12 is attached to the base material 11 together with the release film. Sliced ribbon 10 can be fabricated in the manner described above.

Regarding the adhesive layer 20, first, a composition (adhesive composition) for forming the adhesive layer 20 containing a thermosetting component, a filler, a curing accelerator, a solvent, and the like is prepared. Next, after applying the adhesive composition on the separator to form a coating film, if necessary, the coating film is cured by solvent removal, curing, or the like to form the adhesive layer 20 . Although it does not specifically limit as a coating method, For example, well-known or conventional coating methods, such as roll coating, screen coating, and gravure coating, are mentioned. Moreover, as desolvation conditions, for example, it is performed in the range of temperature 70-160 degreeC, and time 1-5 minutes.

Next, the separators are peeled off from the dicing tape 10 and the adhesive layer 20 , respectively, and the adhesive layer 20 and the adhesive layer 12 are bonded together so that the adhesive layer 20 and the adhesive layer 12 are bonded surfaces. Bonding can be performed, for example, by crimping. In this case, the lamination temperature is not particularly limited, but, for example, it is preferably 30 to 50°C, and more preferably 35 to 45°C. Moreover, although the linear pressure is not specifically limited, For example, 0.1-20 kgf/cm is preferable, and 1-10 kgf/cm is more preferable.

In the case where the adhesive layer 12 is a radiation-hardening adhesive layer as described above, in the case of When the adhesive layer 12 is irradiated with radiation such as ultraviolet rays after the bonding of the adhesive layer 20, the adhesive layer 12 is irradiated, for example, from the substrate 11 side, and the irradiation amount is, for example, 50 to 500 mJ, preferably 100 to 300 mJ. The area (irradiated area R) in the slicing die-bonding film 1 that is irradiated as a measure for reducing the adhesive force of the adhesive layer 12 is usually the area in the adhesive layer 12 where the adhesive layer 20 is attached, excluding the peripheral portion. area. In the case where the irradiation region R is locally provided, it can be performed through a photomask in which a pattern corresponding to regions other than the irradiation region R is formed. Moreover, the method of forming the irradiation area R by irradiating radiation in a spot shape can also be mentioned.

For example, the chip-on-chip film 1 shown in FIG. 1 can be fabricated as described above.

The die-cut die-bond film 1 can be used in the manufacture of semiconductor devices. Specifically, it is as described in the manufacturing method of the semiconductor device mentioned later. And, the adhesive layer 20 in the dicing die attach film 1 is incorporated into the fabricated semiconductor device. Specifically, it is preferably used for the bonding of the adherend and the semiconductor wafer and/or the bonding of the semiconductor wafers to each other, more preferably as shown in FIG. 7( b1 ), FIG. 7( b2 ), and FIG. 7( c ) As shown, it is used for bonding of a substrate to a semiconductor wafer and/or bonding of semiconductor wafers to each other in a semiconductor device (multi-stage stacked semiconductor device) in which semiconductor wafers are laminated in multiple stages. The adhesive layer 20 is preferably used at least for the overhangs in the multi-stage stacked semiconductor device having the overhangs as shown in FIGS. 7( b1 ), 7( b2 ), and 7( c ).

[Manufacturing method of semiconductor device]

A semiconductor device can be fabricated using the diced die-bond film of the present invention. Specifically, a semiconductor device can be manufactured by a manufacturing method comprising the steps of: attaching a split body of a semiconductor wafer including a plurality of semiconductor chips to the above-mentioned adhesive layer side in the dicing die attach film of the present invention, or can Monolithic The step of forming a plurality of semiconductor wafers into a semiconductor wafer (sometimes referred to as "step A"); under the condition of relatively low temperature, extending the dicing tape in the dicing die-bonding film of the present invention, at least cutting the above-mentioned adhesive layer And the step of obtaining the semiconductor wafer with the adhesive layer attached (sometimes referred to as "step B"); under the condition of relatively high temperature, the step of extending the above-mentioned dicing belt to expand the distance between the semiconductor wafers with the above-mentioned adhesive layer ( Sometimes referred to as "step C"); and the step of picking up the above-mentioned semiconductor wafer with the adhesive layer attached (sometimes referred to as "step D").

The split body of the above-mentioned semiconductor wafer including a plurality of semiconductor chips used in Step A, or a semiconductor wafer that can be singulated into a plurality of semiconductor chips can be obtained in the following manner. First, as shown in FIGS. 2( a ) and 2 ( b ), a dividing groove 30 a is formed in the semiconductor wafer W (a dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements have been formed on the first surface Wa. Then, after the wafer processing tape T1 having the adhesive surface T1a is attached to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held in the state of the wafer processing tape T1, and a dicing tool is used. Dividing grooves 30 a of a predetermined depth are formed on the first surface Wa side of the semiconductor wafer W by a rotary blade of a wafer apparatus or the like. The dividing grooves 30a are used to separate the semiconductor wafer W into gaps in units of semiconductor wafers (the dividing grooves 30a are schematically indicated by bold lines in FIGS. 2 to 4).

Next, as shown in FIG. 2( c ), a wafer processing tape T2 having an adhesive surface T2 a is attached to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is peeled off from the semiconductor wafer W .

Next, as shown in FIG. 2( d ), the semiconductor wafer W is held on the tape T2 for wafer processing. In this state, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the second surface Wb (wafer thinning step). The grinding process can be performed using a grinding process apparatus equipped with a grinding stone. Through this wafer thinning step, in this embodiment, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips 31 is formed. Specifically, the semiconductor wafer 30A has a portion (connection portion) where a portion of the wafer to be singulated into a plurality of semiconductor chips 31 is connected on the second surface Wb side. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the front end of the second surface Wb side of the dividing groove 30a is, for example, 1 to 30 μm, or preferably 3 to 20 μm.

(step A)

In step A, a split body of a semiconductor wafer including a plurality of semiconductor chips, or a semiconductor wafer that can be singulated into a plurality of semiconductor chips is attached to the adhesive layer 20 side of the dicing die-bonding film 1 .

In one embodiment of step A, as shown in FIG. 3( a ), the semiconductor wafer 30A held on the tape T2 for wafer processing is attached to the adhesive layer 20 of the dicing die-bonding film 1 . Then, as shown in FIG.3(b), the tape T2 for wafer processing is peeled from the semiconductor wafer 30A. When the adhesive layer 12 in the dicing die-bonding film 1 is a radiation-curable adhesive layer, after the semiconductor wafer 30A is attached to the adhesive layer 20 , the adhesive layer can also be attached to the adhesive layer from the substrate 11 side. 12. Radiation such as ultraviolet rays is irradiated in place of the above-mentioned radiation irradiation in the manufacturing process of the slicing die attach film 1 . The irradiation amount is, for example, 50 to 500 mJ/cm ² , preferably 100 to 300 mJ/cm ² . In the slicing die-bonding film 1 , the irradiation area (irradiated area R shown in FIG. 1 ) as a measure for reducing the adhesive force of the adhesive layer 12 is, for example, the area in the bonding area of the adhesive layer 20 in the adhesive layer 12 . Areas other than its peripheral edge.

(step B)

In step B, the dicing tape 10 in the dicing die-bonding film 1 is extended under a relatively low temperature condition, and at least the adhesive layer 20 is cut to obtain a semiconductor wafer with the adhesive layer attached.

In one embodiment of step B, firstly, after attaching the annular frame 41 to the adhesive layer 12 of the dicing tape 10 in the dicing die-bonding film 1, as shown in FIG. 4(a), The dicing die-bonding film 1 with the semiconductor wafer 30A attached thereto is fixed on the holder 42 of the extension device.

Next, as shown in FIG. 4( b ), the first extension step (cold extension step) is performed under relatively low temperature conditions, the semiconductor wafer 30A is singulated into a plurality of semiconductor wafers 31 , and the dicing die-bonding film 1 is singulated. The adhesive layer 20 is then cut into small pieces of the adhesive layer 21 to obtain a semiconductor wafer 31 with the adhesive layer attached. In the cold stretching step, the hollow cylindrical lifting member 43 of the stretching device is brought into contact with the dicing tape 10 on the lower side in the drawing of the dicing die-bonding film 1 and ascends, so that the semiconductor wafer 30A is attached. The dicing band 10 of the dicing die-bonding film 1 is extended in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. The elongation is carried out under the condition that a tensile stress in the range of 15-32 MPa, preferably 20-32 MPa is generated in the slicing zone 10 . The temperature conditions in the cold stretching step are, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and further preferably -15°C. The stretching speed in the cold stretching step (the speed at which the lifting member 43 is raised) is preferably 0.1 to 100 mm/sec. In addition, the stretching amount in the cold stretching step is preferably 3 to 16 mm.

In step B, when the semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips is used, the thin-walled and easily broken portion of the semiconductor wafer 30A is cut and singulated. A semiconductor wafer 31 is formed. At the same time, in step B, in the adhesive layer 20 in close contact with the adhesive layer 12 of the extended dicing tape 10, deformation is suppressed in each region where the semiconductor wafers 31 are in close contact. In the portion in the vertical direction in the drawing of the dividing grooves between the semiconductor wafers 31, the tensile stress generated in the dicing belt 10 acts in a state where such a deformation suppressing effect does not occur. As a result, the portion of the adhesive layer 20 located in the vertical direction of the dividing groove between the semiconductor wafers 31 is cut. After cutting by extension, as shown in FIG. 4( c ), the lifting member 43 is lowered to release the extended state of the dicing ribbon 10 .

(step C)

In step C, under the condition of relatively high temperature, the above-mentioned dicing belt 10 is extended to enlarge the space between the above-mentioned semiconductor wafers to which the above-mentioned adhesive layer is attached.

In one embodiment of step C, firstly, as shown in FIG. 5( a ), the second extension step (the normal temperature extension step) under the condition of relatively high temperature is performed to enlarge the distance (the distance between the semiconductor wafers 31 to which the adhesive layer is attached). distance). In step C, the hollow cylindrical lifting member 43 of the extending device is raised again to extend the dicing tape 10 of the dicing die-bonding film 1 . The temperature condition in the second stretching step is, for example, 10°C or higher, preferably 15 to 30°C. The stretching speed in the second stretching step (the speed at which the push-up member 43 is raised) is, for example, 0.1 to 10 mm/sec, or preferably 0.3 to 1 mm/sec. In addition, the amount of stretching in the second stretching step is, for example, 3 to 16 mm. In step C, the separation distance of the adhesive layer-attached semiconductor wafers 31 is increased to such an extent that the adhesive layer-attached semiconductor wafers 31 can be appropriately picked up from the dicing tape 10 in a pickup step to be described later. After extending the separation distance, as shown in FIG. 5( b ), the lifting member 43 is lowered to release the extended state of the dicing ribbon 10 . The separation distance of the semiconductor wafer 31 with the adhesive layer on the dicing tape 10 after the restraint is released from the extended state From the viewpoint of narrowing, it is preferable to heat and shrink a portion of the dicing ribbon 10 outside the semiconductor wafer 31 holding region before the extended state is released.

After step C, a cleaning step of cleaning the semiconductor wafer 31 side in the dicing tape 10 of the semiconductor wafer 31 with the adhesive layer attached with a cleaning solution such as water may be performed if necessary.

(step D)

In step D (pick-up step), the semiconductor wafer of the singulated adhesive layer is picked up. In one embodiment of step D, after the above cleaning step as required, as shown in FIG. 6 , the semiconductor wafer 31 with the adhesive layer is picked up from the dicing tape 10 . For example, the pin member 44 of the pick-up mechanism is raised on the lower side of the dicing belt 10 to lift up the semiconductor wafer 31 with the adhesive layer to be picked up through the dicing belt 10 . Its adsorption remains. In the pick-up step, the push-up speed of the pin member 44 is, for example, 1 to 100 mm/sec, and the push-up amount of the pin member 44 is, for example, 50 to 3000 μm.

The above-mentioned manufacturing method of a semiconductor device may also include other steps than steps A to D. For example, in one embodiment, as shown in FIG. 7( a ), the picked-up semiconductor wafer 31 with the adhesive layer attached is preliminarily secured to the adherend 51 via the adhesive layer 21 (preliminary securing step). As the adherend 51 , for example, a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, a separately produced semiconductor wafer, etc. can be mentioned. The shear adhesion force at 25° C. when the adhesive layer 21 is pre-fixed is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa, with respect to the adherend 51 . The structure in which the shear adhesive force of the adhesive layer 21 is 0.2 MPa or more can suppress the bonding between the adhesive layer 21 and the semiconductor due to ultrasonic vibration or heating in the wire bonding step to be described later. Shear deformation occurs on the bonding surface of the bulk wafer 31 or the bonded body 51, and wire bonding is appropriately performed. In addition, the shear bonding force at 175° C. when the adhesive layer 21 is pre-fixed is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa, with respect to the adherend 51 . After the above-mentioned pre-fixing step, the adhesive layer 21 may be heated under the conditions of, for example, 130° C. for 30 minutes to be partially hardened (pre-hardening step).

Next, the electrode pads (not shown) of the semiconductor wafer 31 and the terminals (not shown) of the adherend 51 are electrically connected via the bonding wires 52 (wire bonding step). The connection between the electrode pad of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 can be achieved by ultrasonic welding accompanied by heating, so as not to thermally harden the adhesive layer 21 . As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The wire heating temperature in wire bonding is, for example, 80 to 250°C, preferably 80 to 220°C. In addition, the heating time is several seconds - several minutes.

7( b1 ), the pre-fixing step and the wire bonding step are performed in the following manner when producing the structure in which the semiconductor wafer 31 is laminated in multiple stages on the adherend 51 via the adhesive layer 21 . After the picked-up semiconductor wafer 31 with the adhesive layer is pre-fixed to the adherend 51 via the adhesive layer 21 ( FIG. 7( a )), the separately picked-up semiconductor wafer 31 with the adhesive layer is attached with the adhesive layer 21 . The upper surface of the semiconductor wafer 31 that has been pre-fixed to the adherend 51 is pre-fixed through the adhesive layer 21 in the same manner as in the above-mentioned pre-fixing step. Furthermore, at this time, the pre-fixing is performed so as to be staggered in the plane direction, avoiding the electrode pads that have been pre-fixed on the upper surface of the semiconductor wafer 31 of the adherend 51 . This second pre-fixation is repeated several times (pre-fixation step). Thereafter, the plurality of adhesive layers 21 are partially hardened through the above-mentioned pre-hardening step as necessary, and then wire bonding (bonding) is performed on each semiconductor wafer 31 in the same manner as in the above-mentioned wire bonding step. wire bonding step).

In the multilayer structure of the semiconductor wafer 31 shown in FIG. 7( b1 ), the semiconductor wafer 31 with the adhesive layer is used as a unit, and the semiconductor wafer 31 is placed in one plane direction so as to avoid the wiring portion ( FIG. 7( b1 ). ) in the right direction) staggered formations. In this multi-stage build-up structure, the uppermost semiconductor chip 31a is wire-bonded to the overhang. Furthermore, as another form of the multi-stage laminate structure, the following structure can be mentioned. As shown in FIG. 7( b2 ), the multi-stage laminate structure uses the semiconductor wafer 31 to which the adhesive layer is attached to avoid excessive expansion in the plane direction of the semiconductor wafer 31 . For a unit, stagger the stratum in one plane direction (eg, right direction), and when the base layer reaches a certain level, reverse the staggered direction and stagger the stratum in another plane direction (eg, left direction). In the multi-stage lamination structure of this other form, the semiconductor wafer 31a of the uppermost stage and the semiconductor wafer 31b of the part where the lamination direction is reversed are bonded to the overhangs by wire bonding.

Next, as shown in FIG. 7( c ), the semiconductor chips 31 are sealed with a sealing resin 53 for protecting the semiconductor chips 31 or the bonding wires 52 on the adherend 51 (sealing step). In the sealing step, thermal hardening of the adhesive layer 21 is performed. In the sealing step, the sealing resin 53 is formed, for example, by a transfer injection molding technique using a mold. As a constituent material of the sealing resin 53, an epoxy resin can be used, for example. In the sealing step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185° C., and the heating time is, for example, 60 seconds to several minutes. In the sealing step, in the case where the hardening of the sealing resin 53 is not sufficiently performed, a post-hardening step for completely hardening the sealing resin 53 is performed after the sealing step. Even when the adhesive layer 21 is not completely thermally cured in the sealing step, the adhesive layer 21 and the sealing resin 53 can be completely thermally cured in the post-curing step. In the post-hardening step, the heating temperature is, for example, 165 to 185° C., and the heating time is, for example, 0.5~8 hours.

In the above-described embodiment, as described above, after the semiconductor wafer 31 with the adhesive layer is preliminarily fixed to the adherend 51, the wire bonding step is performed without thermally curing the adhesive layer 21 completely. Instead of such a configuration, in the above-mentioned manufacturing method of a semiconductor device, after pre-fixing the semiconductor wafer 31 with the adhesive layer to the adherend 51, the adhesive layer 21 is thermally hardened, and then the wire bonding step is performed.

In the above-mentioned manufacturing method of a semiconductor device, as another embodiment, the wafer thinning step shown in FIG. 8 may be performed instead of the wafer thinning step described above with reference to FIG. 2( d ). After the process described above with reference to FIG. 2( c ), in the wafer thinning step shown in FIG. 8 , in the state where the semiconductor wafer W is held in the tape T2 for wafer processing, by The second surface Wb is ground and processed to thin the wafer to a predetermined thickness to form a semiconductor wafer divided body 30B including a plurality of semiconductor chips 31 and held by the tape T2 for wafer processing. In the above wafer thinning step, a method of grinding the wafer until the dividing groove 30a is exposed on the second surface Wb side (the first method), or grinding the wafer from the second surface Wb side until reaching the dividing groove 30a may be used. Then, the method of forming the semiconductor wafer divided body 30B by the pressing force of the rotating grindstone on the wafer acts on the division groove 30a and the second surface Wb to generate cracks (second method). The depth from the first surface Wa of the dividing grooves 30 a formed as described above with reference to FIGS. 2( a ) and 2 ( b ) is appropriately determined according to the method used. In FIG. 8, the division groove 30a after the 1st method, or the division groove 30a after the 2nd method, and the crack connected with it are shown by the bold line model. In the above-mentioned method of manufacturing a semiconductor device, in step A, the semiconductor wafer divider 30B produced in the above-described manner as a semiconductor wafer divider may be used instead of the semiconductor wafer 30A, and the above-described process is carried out with reference to FIGS. 3 to 7 . each of the step.

FIGS. 9( a ) and 9 ( b ) show step B in this embodiment, that is, the first stretching step (cold stretching step) performed after the semiconductor wafer dividing body 30B is bonded to the dicing die-bonding film 1 . . In the step B of this embodiment, the hollow cylinder-shaped lifting member 43 of the stretching device is brought into contact with the dicing tape 10 on the lower side in the drawing of the dicing die-bonding film 1 and ascends, so that the semiconductor is attached. The dicing tape 10 of the dicing die-bonding film 1 of the wafer dividing body 30B extends in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer dividing body 30B. The elongation is carried out under the condition that a tensile stress in the range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa, is generated in the slicing zone 10 . The temperature conditions in the cold stretching step are, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and further preferably -15°C. The stretching speed in the cold stretching step (the speed at which the lifting member 43 is raised) is preferably 1 to 400 mm/sec. In addition, the stretching amount in the cold stretching step is preferably 50 to 200 mm. By this cold extension step, the adhesive layer 20 of the dicing die-bonding film 1 is cut into small pieces of the adhesive layer 21 to obtain a semiconductor wafer 31 with the adhesive layer attached. Specifically, in the cold stretching step, in the adhesive layer 20 in close contact with the adhesive layer 12 of the stretched dicing tape 10, deformation is obtained in each region where the semiconductor wafers 31 of the semiconductor wafer split body 30B are in close contact with each other. On the other hand, the tensile stress generated in the dicing belt 10 acts on the portion located in the vertical direction in the drawing of the dividing grooves 30a between the semiconductor wafers 31 in a state where such a deformation restraining effect does not occur. As a result, in the adhesive layer 20, the portion in the vertical direction in the drawing of the dividing groove 30a between the semiconductor wafers 31 is cut.

In the above-mentioned method of manufacturing a semiconductor device, as a further embodiment, the semiconductor wafer 30C produced in the following manner may be used instead of the semiconductor wafer used in the step A 30A or the semiconductor wafer divider 30B.

In this embodiment, as shown in FIGS. 10( a ) and 10 ( b ), first, a modified region 30 b is formed on the semiconductor wafer W. As shown in FIG. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements have been formed on the first surface Wa. Then, after the wafer processing tape T3 having the adhesive surface T3a is attached to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T3, and the The laser light spot-aligned inside the wafer irradiates the semiconductor wafer W along the predetermined dividing line from the opposite side of the tape T3 for wafer processing, and forms a modification in the semiconductor wafer W by ablation using multiphoton absorption. quality region 30b. The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor wafer units. The method of forming the modified region 30b on the line to be divided by laser light irradiation in the semiconductor wafer has been described in detail in, for example, Japanese Patent Laid-Open No. 2002-192370, but the laser light in this embodiment is described in detail. The irradiation conditions are appropriately adjusted within the range of the following conditions, for example.

<Laser light irradiation conditions>

(A) Laser light

Laser light source Semiconductor laser excitation Nd: YAG laser

Wavelength 1064nm

Laser spot cross-sectional area 3.14×10 ^-8 cm ²

Oscillation pattern Q-switching pulse

Repetition frequency below 100kHz

Pulse width 1μs or less

Output 1mJ or less

Laser light quality TEM00

Polarization characteristics Linear polarization

(B) Condensing lens

Magnification 100 times or less

NA 0.55

The transmittance to the laser wavelength is less than 100%

(C) The moving speed of the stage on which the semiconductor substrate is placed is 280 mm/sec or less

Next, as shown in FIG. 10( c ), in a state where the semiconductor wafer W is held on the wafer processing tape T3 , the semiconductor wafer W is thinned to a specified thickness by grinding the second surface Wb. thickness, thereby forming a semiconductor wafer 30C that can be singulated into a plurality of semiconductor chips 31 (wafer thinning step). In the above-mentioned manufacturing method of a semiconductor device, in step A, the semiconductor wafer 30C produced in the above-described manner as a singulated semiconductor wafer can also be used instead of the semiconductor wafer 30A. the steps described in this article.

FIGS. 11( a ) and 11 ( b ) show step B in this embodiment, that is, the first extension step (cold extension step) performed after the semiconductor wafer 30C is bonded to the dicing die attach film 1 . In the cold stretching step, the hollow cylindrical lifting member 43 of the stretching device is brought into contact with the dicing tape 10 on the lower side in the figure of the dicing die-bonding film 1 and rises, and the semiconductor wafer 30C will be attached thereto. The dicing tape 10 of the dicing die-bonding film 1 extends in a two-dimensional direction including the radial and circumferential directions of the semiconductor wafer 30C. The elongation is performed under the condition that a tensile stress in the range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa is generated in the slicing zone 10 . The temperature condition in the cold stretching step is, for example, 0°C Hereinafter, it is preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The stretching speed in the cold stretching step (the speed at which the lifting member 43 is raised) is preferably 1 to 400 mm/sec. In addition, the stretching amount in the cold stretching step is preferably 50 to 200 mm. By this cold extension step, the adhesive layer 20 of the dicing die-bonding film 1 is cut into small pieces of the adhesive layer 21 to obtain a semiconductor wafer 31 with the adhesive layer attached. Specifically, in the cold stretching step, cracks are formed in the fragile modified region 30b in the semiconductor wafer 30C, and the semiconductor wafer 31 is singulated. At the same time, in the cold stretching step, in the adhesive layer 20 in close contact with the adhesive layer 12 of the extended dicing tape 10, the deformation in the regions where the semiconductor chips 31 of the semiconductor wafer 30C are in close contact with each other is suppressed, On the other hand, the tensile stress generated in the dicing belt 10 acts on the portion located in the vertical direction in the figure of the crack formation portion of the wafer, in a state where such a deformation suppressing effect is not produced. As a result, in the adhesive layer 20, the portion in the vertical direction in the drawing of the crack formation portion between the semiconductor wafers 31 is cut.

Furthermore, in the above-mentioned manufacturing method of a semiconductor device, the dicing die-bonding film 1 can be used for the purpose of obtaining a semiconductor wafer with an adhesive layer as described above, but it can also be used for obtaining a three-dimensional lamination of a plurality of semiconductor wafers. The use of a semiconductor wafer with an adhesive layer in the case of mounting. A spacer may be interposed together with the adhesive layer 21 between the semiconductor chips 31 in such three-dimensional mounting, or no spacer may be interposed.

[Example]

Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited by these examples at all.

Example 1 (Production of cutting tape)

100 parts by mass of 2-ethylhexyl acrylate (2EHA), 19 parts by mass of 2-hydroxyethyl acrylate (HEA), and benzene peroxide were placed in a reaction vessel equipped with a condenser tube, a nitrogen gas introduction tube, a thermometer, and a stirring device. 0.4 mass part of formaldehyde and 80 mass parts of toluene were polymerized at 60 degreeC for 10 hours in nitrogen gas flow, and the solution containing acrylic polymer A was obtained.

To the solution containing the acrylic polymer A, 1.2 parts by mass of 2-methacryloyloxyethyl isocyanate (MOI) was added, and an addition reaction was performed at 50° C. for 60 hours in an air stream to obtain an acrylic acid-based polymer. Polymer A'.

Next, 1.3 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Corporation) and a photopolymerization initiator (trade name "Irgacure 184") were added to 100 parts by mass of the acrylic polymer A' , manufactured by BASF Corporation) 3 parts by mass to prepare an adhesive composition A.

The obtained adhesive composition A was coated on the polysiloxane-treated surface of the PET-based separator, and heated at 120° C. for 2 minutes to remove the solvent to form an adhesive layer A with a thickness of 10 μm. Next, the adhesive layer was bonded to an EVA film (manufactured by Gunshi Co., Ltd., thickness 125 μm) as a base material, and was stored at 23° C. for 72 hours to obtain a dicing tape A.

(production of adhesive layer)

With respect to 100 parts by mass of acrylic resin (trade name "TEISANRESIN SG-70L", manufactured by Nagase ChemteX Co., Ltd., mass average molecular weight 900,000), epoxy resin (trade name "KI-3000-4", Toto Chemical Industry Co., Ltd. Co., Ltd.) 200 parts by mass, phenol resin (trade name "MEHC-7851SS", manufactured by Meiwa Chemical Co., Ltd.) 200 mass parts, silica filler (trade name "ST-ZL", manufactured by Nissan Chemical Industry Co., Ltd., with an average particle size of 85 nm) 350 parts by mass (in terms of silica filler), and a hardening accelerator (trade name "Curezol 2PHZ") -PW", manufactured by Shikoku Chemical Industry Co., Ltd.) 2 parts by mass was dissolved in methyl ethyl ketone to prepare an adhesive composition A having a solid content concentration of 30% by mass.

Next, using an applicator to coat the adhesive composition A on the polysiloxane mold release treated surface of the PET release film (thickness 50 μm) having the polysiloxane mold release treated surface to form a coating film. Desolvation was carried out at 120°C for 2 minutes. The adhesive layer A with a thickness (average thickness) of 10 μm was formed on the PET separator in the manner as described above.

(Fabrication of Slicing Die Bonding Film)

The PET-based separator was peeled off from the dicing tape A, and the adhesive layer A was attached to the exposed adhesive layer. During lamination, the center of the dicing tape is aligned with the center of the adhesive film. In addition, a hand pressing roller was used for the bonding system. Next, the adhesive layer in the dicing tape is irradiated with ultraviolet rays from the side of the EVA substrate. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the irradiation cumulative light amount was set to 300 mJ/cm ² . In the manner as described above, the diced die-bonding film of Example 1 having the laminate structure including the dicing tape and the adhesive layer was fabricated.

Example 2 (production of adhesive layer)

With respect to 100 parts by mass of acrylic resin (trade name "TEISANRESIN SG-70L", manufactured by Nagase ChemteX Co., Ltd., mass average molecular weight 900,000), epoxy resin (trade name "KI-3000-4", Toto Chemical Industry Co., Ltd. Co., Ltd.) 200 parts by mass, phenol resin (trade name "MEHC-7851SS", manufactured by Meiwa Chemical Co., Ltd.) 200 mass parts, silica filler (trade name "MEK-ST-2040", manufactured by Nissan Chemical Industry Co., Ltd., with an average particle size of 190 nm) 350 parts by mass (in terms of silica filler), and a hardening accelerator (trade name " Curezol 2PHZ-PW", manufactured by Shikoku Chemical Industry Co., Ltd.) 2 parts by mass was dissolved in methyl ethyl ketone to prepare an adhesive composition B having a solid content concentration of 30% by mass.

Next, using an applicator to coat the adhesive composition B on the polysiloxane mold release treated surface of the PET release film (thickness 50 μm) having the polysiloxane mold release treated surface to form a coating film. Desolvation was carried out at 120°C for 2 minutes. The adhesive layer B with a thickness (average thickness) of 10 μm was formed on the PET separator in the manner as described above.

(Fabrication of Slicing Die Bonding Film)

The PET-based separator was peeled off from the dicing tape A, and the adhesive layer B was attached to the exposed adhesive layer. During lamination, the center of the dicing tape is aligned with the center of the adhesive film. In addition, a hand pressing roller was used for the bonding system. Next, the adhesive layer in the dicing tape is irradiated with ultraviolet rays from the side of the EVA substrate. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the irradiation cumulative light amount was set to 300 mJ/cm ² . The diced die-bonding film of Example 2 having the laminate structure including the diced tape and the adhesive layer was fabricated in the manner as described above.

Example 3 (production of adhesive layer)

With respect to 100 parts by mass of acrylic resin (trade name "TEISANRESIN SG-70L", manufactured by Nagase ChemteX Co., Ltd., mass average molecular weight 900,000), epoxy resin (trade name "KI-3000-4", Toto Chemical Industry Co., Ltd. Co., Ltd.) 200 parts by mass, Phenol resin (trade name "MEHC-7851SS", manufactured by Meiwa Chemical Co., Ltd.) 200 parts by mass, silica filler (trade name "SQ-EM1", manufactured by Admatechs Co., Ltd., average particle size 300 nm) 350 parts by mass ( In terms of silica filler), and 2 parts by mass of a curing accelerator (trade name "Curezol 2PHZ-PW", manufactured by Shikoku Chemical Industry Co., Ltd.) were dissolved in methyl ethyl ketone to prepare a solid content concentration of 30 mass % of adhesive composition C.

Next, using an applicator to coat the adhesive composition C on the polysiloxane mold release treated surface of the PET release film (thickness 50 μm) having the polysiloxane mold release treated surface to form a coating film. Desolvation was carried out at 120°C for 2 minutes. The adhesive layer C with a thickness (average thickness) of 10 μm was formed on the PET separator in the manner as described above.

(Fabrication of Slicing Die Bonding Film)

The PET-based separator was peeled off from the dicing tape A, and the adhesive layer C was attached to the exposed adhesive layer. During lamination, the center of the dicing tape is aligned with the center of the adhesive film. In addition, a hand pressing roller was used for the bonding system. Next, the adhesive layer in the dicing tape is irradiated with ultraviolet rays from the side of the EVA substrate. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the irradiation cumulative light amount was set to 300 mJ/cm ² . The diced die-bonding film of Example 3 having the laminate structure including the diced tape and the adhesive layer was fabricated in the manner as described above.

Example 4 (production of adhesive layer)

With respect to 100 parts by mass of acrylic resin (trade name "TEISANRESIN SG-70L", manufactured by Nagase ChemteX Co., Ltd., mass average molecular weight 900,000), epoxy resin (trade name "KI-3000-4", Toto Chemical Industry Co., Ltd. Co., Ltd.) 115 parts by mass, Phenol resin (trade name "MEHC-7851SS", manufactured by Meiwa Chemical Co., Ltd.) 115 parts by mass, silica filler (trade name "MEK-ST-2040", manufactured by Nissan Chemical Industries, Ltd., average particle size 190 nm) 220 parts by mass (in terms of silica filler) and 2 parts by mass of a curing accelerator (trade name "Curezol 2PHZ-PW", manufactured by Shikoku Chemical Industry Co., Ltd.) were dissolved in methyl ethyl ketone to prepare a solid content Adhesive composition D having a concentration of 28% by mass.

Next, using an applicator to coat the adhesive composition D on the polysiloxane mold release treated surface of the PET release film (thickness 50 μm) having the polysiloxane mold release treated surface to form a coating film. Desolvation was carried out at 120°C for 2 minutes. The adhesive layer D with a thickness (average thickness) of 10 μm was formed on the PET separator in the manner as described above.

(Fabrication of Slicing Die Bonding Film)

The PET-based separator was peeled off from the dicing tape A, and the adhesive layer D was attached to the exposed adhesive layer. During lamination, the center of the dicing tape is aligned with the center of the adhesive film. In addition, a hand pressing roller was used for the bonding system. Next, the adhesive layer in the dicing tape is irradiated with ultraviolet rays from the side of the EVA substrate. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the irradiation cumulative light amount was set to 300 mJ/cm ² . The diced die-bonding film of Example 4 having the laminate structure including the dicing tape and the adhesive layer was fabricated in the manner as described above.

Example 5 (production of adhesive layer)

With respect to 100 parts by mass of acrylic resin (trade name "TEISANRESIN SG-70L", manufactured by Nagase ChemteX Co., Ltd., mass average molecular weight 900,000), epoxy resin Resin (trade name "KI-3000-4", manufactured by Todo Chemical Industry Co., Ltd.) 200 parts by mass, phenol resin (trade name "MEHC-7851SS", manufactured by Minghe Chemical Co., Ltd.) 200 parts by mass, silica filler (trade name "MEK-ST-2040", manufactured by Nissan Chemical Industry Co., Ltd., with an average particle size of 190 nm) 350 parts by mass (in terms of silica filler), and a hardening accelerator (trade name "Curezol 2PHZ-PW", Shikoku Chemical Industry Co., Ltd. product) 1 mass part was melt|dissolved in methyl ethyl ketone, and the adhesive composition E whose solid content concentration became 30 mass % was prepared.

Next, using an applicator to coat the adhesive composition E on the polysiloxane mold release treated surface of the PET release film (thickness 50 μm) having the polysiloxane mold release treated surface to form a coating film. Desolvation was carried out at 120°C for 2 minutes. The adhesive layer E having a thickness (average thickness) of 10 μm was formed on the PET separator in the manner described above.

(Fabrication of Slicing Die Bonding Film)

The PET-based separator was peeled off from the dicing tape A, and the adhesive layer E was attached to the exposed adhesive layer. During lamination, the center of the dicing tape is aligned with the center of the adhesive film. In addition, a hand pressing roller was used for the bonding system. Next, the adhesive layer in the dicing tape is irradiated with ultraviolet rays from the side of the EVA substrate. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the irradiation cumulative light amount was set to 300 mJ/cm ² . The diced die-bonding film of Example 5 having the laminate structure including the dicing tape and the adhesive layer was fabricated in the manner as described above.

Reference Example 1 (production of adhesive layer)

Compared with acrylic resin (trade name "TEISANRESIN SG-70L", Nagase ChemteX Co., Ltd., mass average molecular weight 900,000) 100 parts by mass, epoxy resin (trade name "KI-3000-4", manufactured by Todo Chemical Industry Co., Ltd.) 200 mass parts, phenol resin (trade name "MEHC" -7851SS", manufactured by Meiwa Chemical Co., Ltd.) 200 parts by mass, silica filler (trade name "SE2050-MCV", manufactured by Admatechs Co., Ltd., average particle size 500nm) 350 parts by mass (in terms of silica filler) , and 2 parts by mass of a curing accelerator (trade name "Curezol 2PHZ-PW", manufactured by Shikoku Chemical Industry Co., Ltd.) was dissolved in methyl ethyl ketone to prepare an adhesive composition F having a solid content concentration of 30% by mass .

Next, using an applicator to coat the adhesive composition F on the polysiloxane mold release treated surface of the PET release film (thickness 50 μm) having the polysiloxane mold release treated surface to form a coating film, the coated film Desolvation was carried out at 120°C for 2 minutes. The adhesive layer F having a thickness (average thickness) of 10 μm was formed on the PET separator in the manner described above.

(Fabrication of Slicing Die Bonding Film)

The PET-based separator was peeled off from the dicing tape A, and the adhesive layer F was attached to the exposed adhesive layer. During lamination, the center of the dicing tape is aligned with the center of the adhesive film. In addition, a hand pressing roller was used for the bonding system. Next, the adhesive layer in the dicing tape is irradiated with ultraviolet rays from the side of the EVA substrate. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the irradiation cumulative light amount was set to 300 mJ/cm ² . The diced die-bonding film of Reference Example 1 having the laminate structure including the diced tape and the adhesive layer was fabricated in the above-described manner.

Example 7 (production of adhesive layer)

With respect to 100 parts by mass of acrylic resin (trade name "TEISANRESIN SG-70L", manufactured by Nagase ChemteX Co., Ltd., mass average molecular weight 900,000), epoxy resin (trade name "KI-3000-4", Toto Chemical Industry Co., Ltd. Co., Ltd.) 440 parts by mass, phenol resin (trade name "MEHC-7851SS", manufactured by Meiwa Chemical Co., Ltd.) 440 parts by mass, silica filler (trade name "MEK-ST-2040", Nissan Chemical Industry Co., Ltd. Co., Ltd., average particle size 190nm) 430 parts by mass (in terms of silica filler), and 3 parts by mass of a hardening accelerator (trade name "Curezol 2PHZ-PW", manufactured by Shikoku Chemical Industry Co., Ltd.) were dissolved in a ethyl ketone, and the adhesive composition G whose solid content concentration was 30 mass % was prepared.

Next, using an applicator to coat the adhesive composition G on the polysiloxane mold release treated surface of the PET release film (thickness 50 μm) having the polysiloxane mold release treated surface to form a coating film, the coated film Desolvation was carried out at 120°C for 2 minutes. The adhesive layer G having a thickness (average thickness) of 10 μm was formed on the PET separator in the manner described above.

(Fabrication of Slicing Die Bonding Film)

The PET-based separator was peeled off from the dicing tape A, and the adhesive layer G was attached to the exposed adhesive layer. During lamination, the center of the dicing tape is aligned with the center of the adhesive film. In addition, a hand pressing roller was used for the bonding system. Next, the adhesive layer in the dicing tape is irradiated with ultraviolet rays from the side of the EVA substrate. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the irradiation cumulative light amount was set to 300 mJ/cm ² . The diced die-bonding film of Example 7 having the laminate structure including the dicing tape and the adhesive layer was fabricated in the manner as described above.

Comparative Example 1 (production of adhesive layer)

With respect to 100 parts by mass of acrylic resin (trade name "TEISANRESIN SG-70L", manufactured by Nagase ChemteX Co., Ltd., mass average molecular weight 900,000), epoxy resin (trade name "KI-3000-4", Toto Chemical Industry Co., Ltd. Co., Ltd.) 200 parts by mass, phenol resin (trade name "MEHC-7851SS", manufactured by Meiwa Chemical Co., Ltd.) 200 parts by mass, silica filler (trade name "YA050C-MJF", manufactured by Admatechs Co., Ltd., Average particle size 50 nm) 350 parts by mass (in terms of silica filler), and 2 parts by mass of a hardening accelerator (trade name "Curezol 2PHZ-PW", manufactured by Shikoku Chemical Industry Co., Ltd.) were dissolved in methyl ethyl ketone , and the adhesive composition H having a solid content concentration of 30% by mass was prepared.

Next, using an applicator to coat the adhesive composition H on the polysiloxane mold release treated surface of the PET release film (thickness 50 μm) having the polysiloxane mold release treated surface to form a coating film. Desolvation was carried out at 120°C for 2 minutes. The adhesive layer H with a thickness (average thickness) of 20 μm was formed on the PET separator as described above.

(Fabrication of Slicing Die Bonding Film)

The PET-based separator was peeled off from the dicing tape A, and the adhesive layer H was attached to the exposed adhesive layer. During lamination, the center of the dicing tape is aligned with the center of the adhesive film. In addition, a hand pressing roller was used for the bonding system. Next, the adhesive layer in the dicing tape is irradiated with ultraviolet rays from the side of the EVA substrate. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the irradiation cumulative light amount was set to 300 mJ/cm ² . In the manner as described above, the diced die-bonding film of Comparative Example 1 having the laminate structure including the diced tape and the adhesive layer was produced.

Comparative Example 2 (production of adhesive layer)

With respect to 100 parts by mass of acrylic resin (trade name "TEISANRESIN SG-70L", manufactured by Nagase ChemteX Co., Ltd., mass average molecular weight 900,000), epoxy resin (trade name "KI-3000-4", Toto Chemical Industry Co., Ltd. Co., Ltd.) 200 parts by mass, phenol resin (trade name "MEHC-7851SS", manufactured by Meiwa Chemical Co., Ltd.) 200 parts by mass, silica filler (trade name "MEK-ST-2040", Nissan Chemical Industry Co., Ltd. Co., Ltd., average particle size 190 nm) 350 parts by mass (in terms of silica filler), and 0.5 parts by mass of a hardening accelerator (trade name "Curezol 2PHZ-PW", manufactured by Shikoku Chemical Industry Co., Ltd.) were dissolved in a ethyl ketone, and the solid content concentration was 30 mass % to prepare the adhesive composition I.

Next, using an applicator to coat the adhesive composition I on the polysiloxane mold release treated surface of the PET release film (thickness 50 μm) having the polysiloxane mold release treated surface to form a coating film. Desolvation was carried out at 120°C for 2 minutes. The adhesive layer I with a thickness (average thickness) of 10 μm was formed on the PET separator in the manner described above.

(Fabrication of Slicing Die Bonding Film)

The PET-based separator was peeled off from the dicing tape A, and the adhesive layer I was attached to the exposed adhesive layer. During lamination, the center of the dicing tape is aligned with the center of the adhesive film. In addition, a hand pressing roller was used for the bonding system. Next, the adhesive layer in the dicing tape is irradiated with ultraviolet rays from the side of the EVA substrate. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the irradiation cumulative light amount was set to 300 mJ/cm ² . In the manner as described above, the diced die-bonding film of Comparative Example 2 having the laminate structure including the diced tape and the adhesive layer was produced.

<Evaluation>

The following evaluations were performed on the adhesive layers and the dicing die-bonding films obtained in Examples and Comparative Examples. The results are shown in Table 1.

(heat release before heating)

Regarding the adhesive layers obtained in the Examples and Comparative Examples, respectively, 10 to 15 mg of the adhesive layer was weighed as a measurement sample, and a differential scanning calorimeter (trade name "Q200", manufactured by TA Instruments) was used to raise the temperature of the measurement sample. The temperature was raised from 0°C to 350°C at a rate of 10°C/min, and the DSC measurement was carried out to calculate the total exothermic heat [J/g] at this time as the exothermic heat before heating.

(heat release after heating at 130°C for 30 minutes)

The adhesive layers obtained in Examples and Comparative Examples were laminated so as to have a thickness of 200 μm, and were heated from room temperature to 130° C. in a pressurized oven over 30 minutes, and held at 130° C. for 30 minutes. In addition, pressurization with 7kgf gas was performed during heating. The heat release [J/g] after heating at 130° C. for 30 minutes was calculated in the same manner as the above-mentioned “heat release before heating” except that the adhesive layer heated in this way was used.

(stored elastic modulus)

Regarding the adhesive layers obtained in Examples and Comparative Examples, respectively, the adhesive layers were laminated so as to have a thickness of 200 μm, and the heating was performed in the same manner as in the above-mentioned “heat generation after heating at 130° C. for 30 minutes”. and pressurized, the obtained sample was cut into short strips with a width of 4 mm and a length of 30 mm using a cutting knife to serve as a test piece. Using a solid viscoelasticity measuring device (measuring device: RSA-G2, manufactured by Rheometric Scientific) 1Hz, heating rate 10 Under the conditions of ℃/min, the distance between the initial chucks of 10mm, and the strain of 0.1%, the dynamic storage elastic modulus was measured in the tensile mode in the temperature range of 0~200℃. In addition, the temperature increase was started after holding at 0 degreeC for 5 minutes. And the value at 130 degreeC was read, and this value was made into the storage elastic modulus [MPa] at 130 degreeC after heating at 130 degreeC for 30 minutes.

(average particle size of filler)

The respective adhesive layers obtained in Examples and Comparative Examples were thermally cured at 175° C. for 1 hour, and embedded in resin using EpoFix kit manufactured by Struers. The cross-section of the adhesive layer was exposed by mechanically grinding the embedded resin, and the cross-section was subjected to ion milling with a CP processing apparatus (trade name "SM-09010", manufactured by Nippon Electronics Co., Ltd.), and then conductive. processed and observed by FE-SEM. The FE-SEM observation is carried out at an accelerating voltage of 1 to 5 kV, and a backscattered electron image is observed. Use the image analysis software "Image-J" to identify the filler particles by binarizing the captured image, and then divide the area of the filler in the image by the number of fillers in the image to obtain the average of the fillers area to calculate the average particle size of the filler.

(Wafer build-up evaluation)

In the same manner as in Reference Example 1, an adhesive layer F with a thickness of 25 μm was produced as an adhesive sheet. The adhesive sheet was attached to the mirror-finished wafer on which the modified region was formed on the line to be divided by laser irradiation, and after curing at 175° C. for 2 hours, grinding was performed from the mirror-finished wafer side until the mirror-finished wafer and the above-mentioned adhesive sheet were separated. The total thickness becomes 50 μm. After the dicing and die-bonding films obtained in the Examples and Comparative Examples were attached to the above ground wafers and dicing rings (wafer bonding temperature: 50-80° C.), a die separator was used. ) (trade name "DDS2300", manufactured by DISCO Co., Ltd.) to obtain a sample by cutting wafers and thermally shrinking dicing tapes. That is, first use the cold stretch unit The wafers were cut under the conditions of an extension temperature of -15°C, an extension speed of 100mm/sec, and an extension amount of 12mm. The size of the wafer obtained after cutting was 10 mm×10 mm, and the thickness of the wafer was 25 μm. After that, the cutting tape was thermally shrunk under the conditions of an elongation amount of 10 mm, a heating temperature of 250° C., an air volume of 40 L/min, a heating distance of 20 mm, and a rotation speed of 3°/sec using a thermal stretching unit to obtain an adhesive layer for evaluation. wafer.

A die bonder (trade name "die bonder SPA-300", manufactured by Shinkawa Co., Ltd.) was used for the wafer for evaluation of the above-mentioned adhesive layer at a stage temperature of 90°C, a die bond load of 1000 gf, and a die bond time of 1 second. Under the conditions of BGA (Ball Grid Array, Ball Grid Array) substrate (material: AUS308), 5 pieces of step-like deposition layers were deposited for die bonding. The build-up layers are formed in a stepped shape by being shifted in the same direction by 200 μm. After lamination, the case where there was no peeling was set to ○, the case of peeling at one place was set as Δ, and the case of peeling at two or more places was set as × and evaluated.

(Wire Bonding Evaluation)

A wafer for dicing with a thickness of 30 μm was obtained by grinding the wafer in which aluminum was vapor-deposited on one side. The wafers for dicing were attached to the adhesive layer side of the dicing die-bonding films obtained in Examples and Comparative Examples, respectively, and then the wafers were cut in the same manner as in the above-mentioned "Evaluation of Wafer Lamination" to obtain an adhesive. layer of wafers. The obtained wafer with the adhesive layer was deposited on the Cu lead frame by stair-step deposition of 5 pieces under the conditions of a stage temperature of 90° C., a die-bonding load of 1000 gf, and a die-bonding time of 1 second. The build-up layers are formed in a stepped shape by being shifted by 200 μm in the same direction. After the die-bonded laminate was heated and hardened at 130°C for 30 minutes, five wires with a diameter of 18 μm were bonded to the overhang of the uppermost wafer using a wire bonding device (trade name “Maxum Plus”, manufactured by Kulicke & Soffa Corporation). The Au wire. Under the condition of output 80Amp, time 10ms, load 50g Next, place the Au wire on the Cu lead frame. Furthermore, the Au wire was hit on the wafer under the conditions of a temperature of 130° C., an output of 125 Amp, a time of 10 ms, and a load of 80 g. The case where one or more of the five Au wires could not be bonded to the wafer was determined as ×, and the case where all five of the five Au wires could be bonded to the wafer was determined as ○.

(preservation evaluation)

Preservability evaluation was performed by the time-dependent change of viscosity. The initial viscosity at 90°C after the production of the adhesive layers obtained in the Examples and Comparative Examples was used as the initial viscosity, and the viscosity at 90°C of the adhesive layer after being stored at 23°C for 28 days after production was calculated. Increase rate of initial viscosity (viscosity increase rate) [{viscosity (Pa.s) at 90°C after storage at 23°C for 28 days - initial viscosity (Pa.s)}/initial viscosity (Pa.s)×100] (%), the above-mentioned viscosity increase rate was less than 100% as ○, 100% or more and less than 150% as △, and 150% or more as ×. In addition, the said viscosity was measured by the rotational viscometer (trade name "HAAKE MARS III", the product made by Thermo Fisher Scientific). The measurement conditions were a gap of 100 μm, a turntable diameter of 8 mm, a temperature increase rate of 10° C./min, a strain of 10%, and a frequency of 5 rad/sec.

It was shown that the adhesive layers of Examples 1 to 7 had a small viscosity increase rate, were excellent in storage stability, had less heat release after heating before and after heating than Comparative Examples 1 and 2, and could be cured in a short time. Moreover, the modulus of elasticity at 130°C after hardening is high, and proper wire bonding can be performed even on the overhang.

1‧‧‧Cut and sticky film

10‧‧‧Cut strip

11‧‧‧Substrate

12‧‧‧Adhesive layer

20‧‧‧Adhesive layer

R‧‧‧Irradiated area

Claims (3)

A dicing die-bonding film, comprising: a dicing tape having a laminated structure comprising a base material and an adhesive layer; and an adhesive layer releasably adhering to the above-mentioned adhesive layer in the above-mentioned dicing tape; and The above-mentioned adhesive layer contains a thermosetting component, a filler, and a hardening accelerator, and the heat release measured by DSC after heating at 130°C for 30 minutes is less than 60% of the heat release before heating, and the temperature after the above heating is 130°C The storage elastic modulus is more than 20 MPa and less than 4000 MPa, and the above-mentioned filler is silicon dioxide with an average particle size of 70-300 nm. The dicing die-bonding film of claim 1, wherein the thermosetting component is a thermosetting resin and/or a thermoplastic resin containing a thermosetting functional group. Such as claim 1 or 2 of the dicing adhesive film, wherein the viscosity of the adhesive layer at 90 ℃ is 300 ~ 100000Pa. s.

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