JP2022087595A - Substrate for mounting semiconductor wafer, dicing tape, and dicing die bond film - Google Patents

Abstract

To provide a substrate for mounting a semiconductor wafer, which is relatively hard to tear in an expanding step and can relatively sufficiently cut a die bond layer.SOLUTION: A substrate for mounting a semiconductor wafer has a breaking elongation at -15°C of 300% or more and a breaking strength at -15°C of 20 N or more.SELECTED DRAWING: None

Description

The present invention relates to a substrate for mounting a semiconductor wafer, a dicing tape, and a dicing die bond film.

Conventionally, in the manufacture of semiconductor devices, it is known to use a dicing tape or a dicing die bond film in order to obtain a semiconductor chip for dicing.
The dicing tape includes a base material (base material for mounting a semiconductor wafer) and an adhesive layer laminated on the base material, and the dicing die bond film is peeled off on the pressure-sensitive adhesive layer of the dicing tape. It is provided with a die bond layer (die bond film) that is laminated so as to be possible.

As a method for obtaining a semiconductor chip (die) for die bonding using the dying die bond film, Patent Document 1 below describes a half that forms a groove in the semiconductor wafer so that the semiconductor wafer is processed into a chip (die) by a cutting process. The cutting process, the back grind process of grinding the semiconductor wafer after the half-cut process to reduce the thickness, and one surface (the surface opposite to the circuit surface) of the semiconductor wafer after the back grind process are attached to the die bond layer. The mounting process for fixing the semiconductor wafer to the dicing tape, the expanding process for widening the distance between the half-cut semiconductor chips, the calf maintenance process for maintaining the distance between the semiconductor chips, and the die bond layer and the adhesive layer. It is known to adopt a method having a pickup step of taking out a semiconductor chip in a state where the space is peeled off and a die bond layer is attached.
In the expanding step, the die bond layer is divided into a size corresponding to the size of a plurality of semiconductor chips that have been separated into individual pieces.

In the method for obtaining a semiconductor chip for dicing using a dicing tape or a dicing die bond film as described above, the following Patent Document 2 describes a dicing tape having specific physical properties (initial elastic coefficient at −10 ° C. is 200 MPa or more and 380 MPa or less). And, using Tanδ (dicing tape having a loss elasticity / storage elasticity) of 0.080 or more and 0.3 or less at −10 ° C., and performing the expanding step under low temperature conditions of −15 to 5 ° C. Therefore, in the expanding step, the splitability from the semiconductor wafer to the plurality of semiconductor chips (for example, ease of splitting and uniformity) and the size of the plurality of semiconductor chips of the dicing layer attached to the semiconductor wafer It is disclosed that the splittability to a considerable size can be improved.

Japanese Unexamined Patent Publication No. 2019-9203 JP-A-2015-185591A

However, even when the dicing tape is configured as described in Patent Document 1, in the expanding step, the dicing layer is sufficiently divided into a size corresponding to the size of the plurality of semiconductor chips. May not be possible.
Further, in order to realize the miniaturization of semiconductor devices, which has been increasingly required in recent years, when a plurality of semiconductor chips provided with a split die bond layer are mounted on a wiring board via the die bond layer, a plurality of semiconductor chips are mounted. One of the semiconductor chips is mounted on the wiring substrate via the die bond layer, and a plurality of other semiconductor chips overlap with the semiconductor chip in a plan view and are higher than the semiconductor chip. It is called FOD (Film On Die), which is mounted so as to be positioned and covers the semiconductor chip with the die bond layer provided on the semiconductor chip located at the lowest position among the plurality of other semiconductor chips. For a semiconductor chip that is mounted on a wiring board via a die bond layer and is wire-bonded to the wiring board by a bonding wire, all of the semiconductor chip and a part or all of the bonding wire are attached. A mounting called FOW (Film On Wild) in which another semiconductor chip is attached to the wiring board via the other die bond layer while being embedded in another die bond layer (embedded in another die bond layer). The form is adopted.
Here, in the FOD, the thickness of the die bond layer covering the one semiconductor chip mounted on the wiring board is relatively thick, about 100 μm to 140 μm, and in the FOW, the one semiconductor chip mounted on the semiconductor substrate. Since the thickness of the other die bond layer covering all of the above and a part or all of the bonding wire is also relatively thick, about 40 μm to 80 μm, the problem of the splittability of the die bond layer in the expanding step becomes larger. Conceivable.
From the above-mentioned circumstances, although a die bond layer showing more sufficient splittability is desired in the expanding step, it cannot be said that the study on this has been sufficiently done.

In addition, there is a concern that the base material may be torn in the expanding step.

It is considered that the above-mentioned problem also occurs in all cases where the above-mentioned expanding step is adopted in the method of obtaining a semiconductor chip for dicing using the dicing die-bonding film.

Therefore, the present invention comprises a semiconductor wafer mounting base material that is relatively hard to tear in the expanding step and that can relatively sufficiently cut the die bond layer, and a dicing tape and a dicing tape provided with the semiconductor wafer mounting base material. It is an object to provide a dicing die bond film.

As a result of diligent studies by the present inventors, if the semiconductor wafer mounting substrate has a breaking elongation at -15 ° C of 300% or more and a breaking strength at -15 ° C of 20 N or more, in the expanding step, The present invention has been conceived by finding that the substrate for mounting a semiconductor wafer is relatively difficult to tear and that the die bond layer arranged on the substrate for mounting a semiconductor wafer can be relatively sufficiently cut. I arrived.

That is, the substrate for mounting a semiconductor wafer according to the present invention is
The breaking elongation at −15 ° C. is 300% or more, and the breaking strength at −15 ° C. is 20 N or more.

According to such a configuration, in the expanding step, the semiconductor wafer mounting base material is relatively hard to tear, and the die bond layer (the die bond layer arranged on the semiconductor wafer mounting base material) is relatively sufficiently provided. It can be divided.

In the substrate for mounting a semiconductor wafer,
It is preferable to have at least one layer containing an elastomer resin.

According to such a configuration, in the expanding step, the semiconductor wafer mounting base material becomes more difficult to tear, and the die bond layer (the die bond layer arranged on the semiconductor wafer mounting base material) is further sufficiently provided. It can be divided.

In the substrate for mounting a semiconductor wafer,
It is preferable that the elastomer resin is an olefin-based elastomer resin.

According to such a configuration, in the expanding step, the semiconductor wafer mounting base material becomes more difficult to tear, and the die bond layer (the die bond layer arranged on the semiconductor wafer mounting base material) is further sufficiently provided. It can be divided.

In the substrate for mounting a semiconductor wafer,
The thickness is preferably 90 μm or more and 130 μm or less.

According to such a configuration, in the expanding step, the semiconductor wafer mounting base material becomes more difficult to tear, and the die bond layer (the die bond layer arranged on the semiconductor wafer mounting base material) is further sufficiently provided. It can be divided.

The dicing tape according to this embodiment is
With the base material
With a pressure-sensitive adhesive layer laminated on the substrate,
The base material is a base material for mounting any of the above semiconductor wafers.

According to such a configuration, in the expanding step, the substrate for mounting the semiconductor wafer is relatively hard to tear, and the die bond layer (the die bond layer arranged on the pressure-sensitive adhesive layer) is relatively sufficiently cut. Can be done.

The dicing die bond film according to this embodiment is
A dicing tape with an adhesive layer laminated on a base material,
A dicing layer laminated on the pressure-sensitive adhesive layer of the dicing tape is provided.
The base material is a base material for mounting any of the above semiconductor wafers.

According to such a configuration, in the expanding step, the semiconductor wafer mounting base material is relatively hard to tear, and the die bond layer can be relatively sufficiently cut.

According to the present invention, a semiconductor wafer mounting base material that is relatively hard to tear and can relatively sufficiently cut the die bond layer in the expanding step, and a dicing tape and a dicing tape provided with the semiconductor wafer mounting base material. A dicing die bond film can be provided.

The cross-sectional view which shows the structure of the dicing tape which concerns on one Embodiment of this invention. The cross-sectional view which shows the structure of the dicing die bond film which concerns on one Embodiment of this invention. The cross-sectional view which shows the state of the half-cut processing in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the half-cut processing in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the back grind processing in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the back grind processing in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the mounting process in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the mounting process in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the expansion process at a low temperature in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the expansion process at a low temperature in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the expansion process at a low temperature in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the expansion process at room temperature in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the expansion process at room temperature in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the calf maintenance process in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the pickup process in the manufacturing method of a semiconductor integrated circuit schematically.

Hereinafter, an embodiment of the present invention will be described.

[Base material for mounting semiconductor wafers]
The substrate for mounting a semiconductor wafer according to this embodiment has a breaking elongation at −15 ° C. of 300% or more and a breaking strength at −15 ° C. of 20 N or more.
As will be described later, the base material for mounting a semiconductor wafer according to this embodiment is used as a base material for a dicing tape and a dicing die bond film used as a manufacturing auxiliary tool for manufacturing a semiconductor integrated circuit.

Since the semiconductor wafer according to the present embodiment has the above configuration, it is used for mounting the semiconductor wafer in the expanding step (expanding step when manufacturing a semiconductor using a dicing tape and a dicing die bond film as a manufacturing auxiliary tool). The present inventors explain the reason why the base material is relatively hard to tear and the die bond layer (the die bond layer arranged on the semiconductor wafer mounting base material) can be relatively sufficiently cut. I think as follows.

When a semiconductor wafer and a dicing layer attached to the semiconductor wafer are cut to obtain a plurality of semiconductor chips and a dicing layer individualized to a size corresponding to the size of the plurality of semiconductor chips, adjacent semiconductor chips are obtained. In the expanding step (for example, expanding at a low temperature (for example, -15 ° C.)), the semiconductor wafer mounting base material in the dicing tape is sufficient in order to sufficiently space the spaces and the separated die bond layers. It is preferable to be stretched (stretched).
On the other hand, as described above, when the semiconductor wafer mounting base material is extended in the expanding step, it is necessary to suppress the tearing of the semiconductor wafer mounting base material and on the semiconductor wafer mounting base material. It is necessary that the die bond layer arranged in the is sufficiently divided.
From such a viewpoint, it is considered that the substrate for mounting a semiconductor wafer needs to have an appropriate hardness in addition to an appropriate elasticity, and also needs to have an appropriate stress.
The substrate for mounting a semiconductor wafer according to the present embodiment has a breaking elongation at −15 ° C. of 300% or more and a breaking strength at −15 ° C. of 20 N or more, that is, at −15 ° C. Since it has an appropriate value as a value of elongation at break and a value of breaking strength at -15 ° C, it has an appropriate hardness in addition to an appropriate elasticity, and an appropriate stress is easily applied. Therefore, the present inventors consider that the tearing of the semiconductor wafer mounting base material can be suppressed and the die bond layer arranged on the semiconductor wafer mounting base material can be sufficiently cut.

The material constituting the semiconductor wafer mounting base material, the layer structure of the semiconductor wafer mounting base material, the thickness of the semiconductor wafer mounting base material, and the like can be appropriately set, or the semiconductor wafer mounting base material can be used. When a plurality of materials constituting the above are used, by appropriately adjusting these ratios, the semiconductor wafer mounting substrate has a breaking elongation at −15 ° C. of 300% or more and at −15 ° C. It can be assumed that the breaking strength is 20 N or more.

The breaking elongation at −15 ° C. and the breaking strength at −15 ° C. can be obtained as follows.
For details on the elongation at break, use a dicing tape with a length of 120 mm (measured length, L ₀ ) and a width of 10 mm as a test piece, and use a tensile tester (Autograph AG-IS, manufactured by Shimadzu Corporation) to measure the temperature. The test piece is pulled in the length direction under the conditions of −15 ° C., a chuck distance of 50 mm, and a tensile speed of 1000 mm / min, and the length (L ₁ ) at which the test piece breaks is measured.
Then, the elongation at break E at −15 ° C. is calculated based on the following formula.

Elongation at break E = (L ₁ − L ₀ ) / L ₀ × 100

The breaking strength is measured by measuring the force applied when the test piece breaks when the tensile test is performed under the same conditions as above using the test piece and the tensile tester. You can ask.

The substrate for mounting a semiconductor wafer according to this embodiment contains a resin. Examples of the resin contained in the substrate for mounting the semiconductor wafer include polyolefin resin, polyester resin, polyurethane resin, polycarbonate resin, polyether ether ketone resin, polyimide resin, polyetherimide resin, polyamide resin, all aromatic polyamide resin, and poly. Examples thereof include vinyl chloride resin, polyvinylidene chloride, polyphenyl sulfide, fluororesin, cellulose resin, silicone resin, EVA resin (ethylene vinyl acetate copolymer resin), ionomer resin, elastomer and the like.
The base material for mounting a semiconductor wafer according to the present embodiment may contain one kind of the above-mentioned resin, or may contain two or more kinds of the above-mentioned resins.
As will be described later, when the pressure-sensitive adhesive layer laminated on the semiconductor wafer mounting base material contains an ultraviolet curable pressure-sensitive adhesive, the semiconductor wafer mounting base material is configured to have ultraviolet transparency. Is preferable.
Among the above resins, the substrate for mounting a semiconductor wafer according to the present embodiment preferably contains an EVA resin or an elastomer, and more preferably contains an elastomer.

Examples of the elastomer resin include various known elastomer resins such as styrene-based elastomer resin, olefin-based elastomer resin, polyester-based elastomer resin, and polyurethane-based elastomer resin.
Among these, it is preferable to use an olefin-based elastomer resin, and among the olefin-based elastomer resins, it is preferable to use a propylene-based elastomer resin.
Examples of commercially available propylene-based elastomer resins include Vistamax 3980 manufactured by ExxonMobil Chemical Co., Ltd.

The base material for mounting a semiconductor wafer according to the present embodiment may have a single-layer structure or a laminated structure, but in the case of a laminated structure, a layer containing an elastomer resin (hereinafter, an elastomer layer). It is preferable to have a layer containing an EVA resin having a vinyl acetate content of 20% by mass or more (hereinafter referred to as a first EVA resin), and among these, it is more preferable to have an elastomer layer.
When the semiconductor wafer mounting base material according to the present embodiment has a single-layer structure, the semiconductor wafer mounting base material preferably contains an EVA resin, and the vinyl acetate content among the EVA resins is high. Contains 10% by mass of EVA resin.
The vinyl acetate content of the EVA resin can be measured according to JIS K7192: 1999.
Examples of the first EVA resin include Evaflex (registered trademark) EV250 manufactured by Mitsui and Dow Polychemicals.
The base material for mounting a semiconductor wafer may be obtained by non-stretching molding or by stretching molding, but it is preferably obtained by stretching molding.

The elastomer layer contains an elastomer resin. In addition to the elastomer resin, the elastomer layer preferably contains an EVA resin having a vinyl acetate content of more than 10% by mass and 30% by mass or less (hereinafter referred to as a second EVA resin).
Since the elastomer layer contains the elastomer resin and the second EVA resin, the elastomer layer has a relatively high heat shrinkage property, so that the calf can be relatively maintained in the calf maintenance step described later. At the same time, the strength is relatively high, and the semiconductor wafer can be satisfactorily cut.
When the elastomer layer contains the elastomer resin and the second EVA resin, the elastomer resin is preferably contained in an amount of 50% by mass or more and 90% by mass or less, and preferably 60% by mass or more and 80% by mass or less. Is more preferable.
Further, the second EVA resin is preferably contained in an amount of 10% by mass or more and 50% by mass or less, and more preferably 20% by mass or more and 40% by mass or less.
Further, the ratio (second EVA resin / elastomer resin) W ₁ of the mass of the elastomer resin to the mass of the second EVA resin is preferably 0.1 or more, and more preferably 0.25 or more. Further, W ₁ is preferably 1.0 or less, and more preferably 0.67 or less.
Examples of commercially available products of the second EVA resin include Evaflex (registered trademark) P1007 manufactured by Mitsui Dow Polychemical Co., Ltd.

When the semiconductor wafer mounting base material has a laminated structure, the semiconductor wafer mounting base material may be configured by laminating a plurality of elastomer layers, or may be configured by laminating a plurality of elastomer layers, or may be configured without an elastomer layer and an elastomer resin (hereinafter referred to as a layer). It may be configured to include (referred to as a non-elastomer layer).
In the present specification, the elastomer layer means a low elastic modulus layer having a lower tensile storage elastic modulus at room temperature (23 ° C.) than that of a non-elastomer layer. Examples of the elastomer layer include those having a tensile storage elastic modulus of 10 MPa or more and 100 MPa or less at room temperature, and examples of the non-elastomer layer include those having a tensile storage elastic modulus of 200 MPa or more and 500 MPa or less at room temperature.
The tensile storage elastic modulus at room temperature means a value measured as follows.
Specifically, a film having a length of 40 mm and a width of 10 mm is used as a test piece, and a solid viscoelasticity measuring device (for example, model RSAIII, manufactured by Rheometric Scientific) is used to increase the frequency at 1 Hz, the strain amount at 0.1%, and increase. The tensile storage elastic modulus of the test piece is measured in the temperature range of −50 ° C. to 100 ° C. under the conditions of a temperature rate of 10 ° C./min and a chuck distance of 22.5 mm. At that time, the tensile storage elastic modulus at room temperature can be obtained by reading the value at room temperature (23 ° C.).
The measurement is performed by pulling the test piece in the MD direction (resin flow direction).

In the configuration in which a plurality of the elastomer layers are laminated, it is preferable that the elastomer layers are laminated in two or more layers, and it is particularly preferable that three layers are laminated.
In the configuration in which two elastomer layers are laminated, the layer thickness of the outer layer (hereinafter referred to as the first layer) in the state of being rolled up and stored and the inner layer (hereinafter referred to as the first layer) in the state of being wound up and stored are used. , The ratio (referred to as the second layer) to the layer thickness (second layer / first layer) T ₁ is preferably 5 or more, and more preferably 10 or more. Further, T ₁ is preferably 30 or less, more preferably 20 or less.
Further, in the configuration in which the elastomer layers are laminated in three layers, the innermost layer in the state of being wound up and stored (the layer on the side opposite to the side in which the first layer is laminated in the second layer) is the third layer. As a layer, the ratio of the layer thickness of the third layer to the layer thickness of the second layer (second layer / third layer) T ₃ is preferably 5 or more, and more preferably 7 or more. Further, T ₃ is preferably 20 or less, and more preferably 15 or less.
Further, in such a three-layer structure, the ratio of the layer thickness of the first layer to the layer thickness of the second layer (second layer / first layer) T ₂ is preferably 5 or more, preferably 7 or more. Is more preferable. Further, T ₂ is preferably 20 or less, and more preferably 15 or less.
Further, in the configuration in which two or more of the elastomer layers are laminated, it is preferable that the outermost layer (the first layer), which is the outermost layer in the state of being rolled up and stored, contains an antistatic agent. Since the outermost layer contains an antistatic agent, it is possible to prevent the outermost layer from being charged with static electricity.
Further, the innermost layer (in the case of a three-layer structure, the third layer), which is the innermost layer in the state of being rolled up and stored, may contain an antistatic agent.
The outermost layer preferably contains the antistatic agent in an amount of 10% by mass or more, more preferably 20% by mass or more, based on the total mass of the resin contained in the outermost layer.
Further, the outermost layer preferably contains the antistatic agent in an amount of 40% by mass or less, more preferably 30% by mass or less, based on the total mass of the resin contained in the outermost layer.
Further, when the innermost layer contains an antistatic agent, it is preferable that the innermost layer contains the antistatic agent in the same mass ratio as described above.

In the configuration including the elastomer layer and the non-elastomer layer, the non-elastomer layer preferably contains a polypropylene resin (hereinafter referred to as metallocene PP resin) which is a polymer product produced by a metallocene catalyst. Examples of the metallocene PP resin include a propylene / α-olefin copolymer which is a polymer product of a metallocene catalyst.
Examples of commercially available metallocene PP resins include Wintech WXK1223 manufactured by Japan Polypropylene Corporation.
The non-elastomer layer may contain an ionomer resin. Since the non-elastomer layer contains an ionomer resin, the non-elastomer layer has improved elasticity and flexibility in a low temperature region.
When the non-elastomer layer contains a metallocene PP resin and an ionomer resin, the metallocene PP resin is preferably contained in an amount of 50% by mass or more and 90% by mass or less, preferably 60% by mass or more and 80% by mass or less. Is more preferable.
Further, the ionomer resin is preferably contained in an amount of 10% by mass or more and 50% by mass or less, and more preferably 20% by mass or more and 40% by mass or less.
Further, the ratio (ionomer resin / metallocene PP resin) W ₂ between the mass of the metallocene PP resin and the mass of the ionomer resin is preferably 0.1 or more, and more preferably 0.25 or more.
Further, W ₂ is preferably 1.0 or less, and more preferably 0.67 or less.

Here, the metallocene catalyst is a transition metal compound (so-called metallocene compound) of Group 4 of the periodic table containing a ligand having a cyclopentadienyl skeleton, and reacts with the metallocene compound to form the metallocene compound as a stable ion. It is a catalyst consisting of a co-catalyst that can be activated into a state, and if necessary, contains an organic aluminum compound. The metallocene compound is a crosslinked metallocene compound that enables stereoregular polymerization of propylene.

Among the propylene / α-olefin copolymer which is a polymer product of the metallocene catalyst, the propylene / α-olefin random copolymer which is a polymer product of the metallocene catalyst is preferable, and propylene / α- which is a polymer product of the metallocene catalyst is preferable. Among the olefin random copolymers, propylene / α-olefin random copolymer having 2 carbon atoms, which is a polymer product of a metallocene catalyst, and propylene / α-olefin random copolymer having 4 carbon atoms, which is a polymer product of a metallocene catalyst, Further, those selected from the propylene / α-olefin random copolymer having 5 carbon atoms which is a polymer of the metallocene catalyst are preferable, and among these, the propylene / ethylene random copolymer which is a polymer of the metallocene catalyst is preferable. Optimal.

When the substrate for mounting the semiconductor wafer has a laminated structure of an elastomer layer and a non-elastomer layer, the substrate for mounting the semiconductor wafer includes a resin constituting the elastomer layer and a resin constituting the non-elastomer layer. It is preferably obtained by co-extrusion to form a laminated structure of an elastomer layer and a non-elastomer layer.
As the coextrusion molding, any suitable coextrusion molding generally performed in the production of films, sheets and the like can be adopted. Among the coextrusion moldings, it is preferable to adopt the inflation method or the coextrusion T-die method from the viewpoint that the substrate for mounting the semiconductor wafer can be efficiently obtained.

When the substrate for mounting a semiconductor wafer having a laminated structure is obtained by coextrusion molding, the elastomer layer and the non-elastomer layer are in contact with each other in a heated and melted state, so that the resin contained in the elastomer layer and the non-elastomer layer are in contact with each other. It is preferable that the difference in melting point of the resin contained in the elastomer layer is small.
As described above, since the difference in melting point between the resin contained in the elastomer layer and the resin contained in the non-elastomer layer is small, it is possible to prevent excessive heat from being applied to the resin having a low melting point among these resins. Therefore, it is possible to suppress the formation of by-products due to thermal deterioration of the resin having a low melting point. Further, it is possible to suppress the occurrence of poor lamination between the elastomer layer and the non-elastomer layer due to an excessive decrease in the viscosity of the resin having a low melting point. The melting point difference between the resin contained in the elastomer layer and the resin contained in the non-elastomer layer is preferably 0 ° C. or higher and 70 ° C. or lower, and more preferably 0 ° C. or higher and 55 ° C. or lower.
The melting points of the resin contained in the elastomer layer and the resin contained in the non-elastomer can be measured by differential scanning calorimetry (DSC) analysis. For example, by using a differential scanning calorimeter (TA Instruments Co., Ltd., model DSC Q2000), the temperature is raised to 200 ° C. at a heating rate of 5 ° C./min under a nitrogen gas stream, and the peak temperature of the endothermic peak is obtained. Can be measured.
When the elastomer layer and the non-elastomer layer contain a plurality of resins, the melting point of the resin contained in the elastomer layer and the melting point of the resin contained in the non-elastomer layer are used by using a differential scanning calorimeter. When measured, a plurality of peaks corresponding to each resin are detected. In such a case, the peak temperature of the two resins having the largest melting point difference becomes the melting point difference.

The thickness of the substrate for mounting a semiconductor wafer according to the present embodiment is preferably 55 μm or more and 195 μm or less, more preferably 70 μm or more and 150 μm or less, and particularly preferably 90 μm or more and 130 μm or less.
When the thickness of the semiconductor wafer mounting substrate is 90 μm or more and 130 μm or less, the step of extending the semiconductor wafer mounting (expansion when manufacturing a semiconductor using a dicing tape and a dicing die bond film as a manufacturing auxiliary tool). In the process and the pick-up process), the semiconductor wafer mounting substrate is more difficult to tear, and the dicing layer (the dicing layer arranged on the semiconductor wafer mounting substrate) can be further sufficiently cut. can.
For the thickness of the substrate for mounting a semiconductor wafer, for example, a dial gauge (manufactured by PEACOCK, model R-205) is used to measure the thickness of any five randomly selected points, and these thicknesses are arithmetically averaged. It can be obtained by doing.

[Dicing tape]
Next, the dicing tape 10 according to the present embodiment will be described with reference to FIG. In the description of the dicing tape 10, the description will not be repeated for the portion overlapping with the above-mentioned semiconductor wafer mounting base material.

As shown in FIG. 1, the dicing tape 10 according to the present embodiment includes a base material 1 and a pressure-sensitive adhesive layer 2 laminated on the base material 1.
That is, in the dicing tape 10 according to the present embodiment, the base material 1 supports the pressure-sensitive adhesive layer 2.
In the dicing tape 10 according to the present embodiment, the base material 1 is a base material for mounting a semiconductor wafer according to the present embodiment.
As described above, the substrate for mounting a semiconductor wafer according to the present embodiment has a breaking elongation at −15 ° C. of 300% or more and a breaking strength at −15 ° C. of 20 N or more.

The semiconductor wafer mounting base material preferably has at least one layer containing an elastomer resin.
Further, in the substrate for mounting the semiconductor wafer, it is preferable that the elastomer resin is an olefin-based elastomer resin.
Further, the thickness of the substrate for mounting the semiconductor wafer is preferably 90 μm or more and 130 μm or less.

The pressure-sensitive adhesive layer 2 contains a pressure-sensitive adhesive. The pressure-sensitive adhesive layer 2 is held by adhering a semiconductor wafer for individualization to a semiconductor chip.

Examples of the pressure-sensitive adhesive include those capable of reducing the pressure-sensitive adhesive force by an action from the outside in the process of using the dicing tape 10 (hereinafter referred to as a pressure-reducing pressure-sensitive adhesive).

When a pressure-reducing pressure-sensitive adhesive is used as the pressure-sensitive adhesive, the pressure-sensitive adhesive layer 2 exhibits a relatively high adhesive strength (hereinafter referred to as a high-adhesive state) and a relatively low adhesive strength in the process of using the dicing tape 10. It is possible to use the state (hereinafter referred to as low adhesive state) properly. For example, when the semiconductor wafer attached to the dicing tape 10 is subjected to splitting, it is possible to prevent a plurality of semiconductor chips separated by the splitting of the semiconductor wafer from floating or peeling from the pressure-sensitive adhesive layer 2. Therefore, the high adhesive state is used. On the other hand, in order to pick up a plurality of fragmented semiconductor chips after the semiconductor wafer is cut, a low adhesive state is used in order to facilitate picking up a plurality of semiconductor chips from the pressure-sensitive adhesive layer 2.

Examples of the adhesive-reducing adhesive include an adhesive that can be cured by irradiation in the process of using the dicing tape 10 (hereinafter referred to as a radiation-curable adhesive).

Examples of the radiation-curing pressure-sensitive adhesive include a type of pressure-sensitive adhesive that cures by irradiation with an electron beam, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays. Among these, it is preferable to use a pressure-sensitive adhesive (ultraviolet-curing pressure-sensitive adhesive) that is cured by irradiation with ultraviolet rays.

The radiation-curable pressure-sensitive adhesive includes, for example, a base polymer such as an acrylic polymer and a radiation-polymerizable monomer component or a radiation-polymerizable oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples thereof include additive-type radiation-curable pressure-sensitive adhesives.

Examples of the acrylic polymer include those containing a monomer unit derived from a (meth) acrylic acid ester. Examples of the (meth) acrylic acid ester include (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester.

The pressure-sensitive adhesive layer 2 may contain an external cross-linking agent. As the external cross-linking agent, any one that can react with the acrylic polymer as the base polymer to form a cross-linked structure can be used. Examples of such an external cross-linking agent include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based cross-linking agents.

Examples of the radiation-polymerizable monomer component include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, and dipentaerythritol monohydroxypenta (meth). ) Acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate and the like. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based. The content ratio of the radiation-polymerizable monomer component and the radiation-polymerizable oligomer component in the radiation-curable pressure-sensitive adhesive is selected within a range that appropriately reduces the stickiness of the pressure-sensitive adhesive layer 2.

The radiation-curing pressure-sensitive adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketor compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphor. Examples thereof include quinone, halogenated ketone, acylphosphinoxide, and acylphosphonate.

The pressure-sensitive adhesive layer 2 may contain a cross-linking accelerator, a pressure-sensitive adhesive, an anti-aging agent, a pigment, a colorant such as a dye, or the like, in addition to the above-mentioned components.

The thickness of the pressure-sensitive adhesive layer 2 is preferably 1 μm or more and 50 μm or less, more preferably 2 μm or more and 45 μm or less, and further preferably 5 μm or more and 40 μm or less.
The thickness of the pressure-sensitive adhesive layer 2 is determined by measuring the thickness of any five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and arithmetically averaging these thicknesses. Can be asked.

[Dicing die bond film]
Next, the dicing die bond film 20 according to the present embodiment will be described with reference to FIG. 2. In the description of the dicing die bond film 20, the description will not be repeated for the portion overlapping with the above-mentioned semiconductor wafer mounting base material and the dicing tape 10.

As shown in FIG. 2, the dicing die bond film 20 according to the present embodiment is laminated on the dicing tape 10 in which the adhesive layer 2 is laminated on the base material 1 and on the adhesive layer 2 of the dicing tape 10. A die bond layer 3 is provided.
That is, in the dicing die bond film 20 according to the present embodiment, the base material 1 supports the pressure-sensitive adhesive layer 2 and the dicing die bond layer 3.
In the dicing tape 10 according to the present embodiment, the base material 1 is a base material for mounting a semiconductor wafer according to the present embodiment.
As described above, the substrate for mounting a semiconductor wafer according to the present embodiment has a breaking elongation at −15 ° C. of 300% or more and a breaking strength at −15 ° C. of 20 N or more.

The semiconductor wafer mounting base material preferably has at least one layer containing an elastomer resin.
Further, in the substrate for mounting the semiconductor wafer, it is preferable that the elastomer resin is an olefin-based elastomer resin.
Further, the thickness of the substrate for mounting the semiconductor wafer is preferably 90 μm or more and 130 μm or less.

In the dicing die bond film 20 according to the present embodiment, a semiconductor wafer is attached on the die bond layer 3.
In the cutting of the semiconductor wafer using the dicing die bond film 20, the die bond layer 3 is also cut together with the semiconductor wafer. The die bond layer 3 is divided into a size corresponding to the size of a plurality of semiconductor chips that have been fragmented. As a result, a semiconductor chip with the die bond layer 3 can be obtained.

The die bond layer 3 preferably has thermosetting property. By including at least one of a thermosetting resin and a thermoplastic resin having a thermosetting functional group in the die bond layer 3, the die bond layer 3 can be imparted with thermosetting property.

When the die bond layer 3 contains a thermosetting resin, examples of such a thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide. Examples include resin. Among these, it is preferable to use an epoxy resin.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type and orthocresol. Examples thereof include novolak type, trishydroxyphenylmethane type, tetraphenylol ethane type, hydantin type, trisglycidyl isocyanurate type, and glycidylamine type epoxy resins.

Examples of the phenol resin as a curing agent for the epoxy resin include novolak type phenol resin, resol type phenol resin, and polyoxystyrene such as polyparaoxystyrene.

When the die bond layer 3 contains a thermoplastic resin having a thermosetting functional group, examples of such a thermoplastic resin include a thermosetting functional group-containing acrylic resin. Examples of the acrylic resin in the thermosetting functional group-containing acrylic resin include those containing a monomer unit derived from (meth) acrylic acid ester.
In the thermosetting resin having a thermosetting functional group, a curing agent is selected according to the type of the thermosetting functional group.

The die bond layer 3 may contain a thermosetting catalyst from the viewpoint of sufficiently advancing the curing reaction of the resin component and increasing the curing reaction rate. Examples of the thermosetting catalyst include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihalogenborane-based compounds.

The die bond layer 3 may contain a thermoplastic resin. The thermoplastic resin functions as a binder. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, and polycarbonate resin. Examples thereof include thermoplastic polyimide resins, polyamide resins such as polyamide 6 and polyamides 6 and 6, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluororesins. As the thermoplastic resin, only one kind may be used, or two or more kinds may be used in combination. As the thermoplastic resin, an acrylic resin is preferable from the viewpoint that the number of ionic impurities is small and the heat resistance is high, so that the connection reliability by the die bond layer can be easily ensured.

The acrylic resin is preferably a polymer containing a monomer unit derived from (meth) acrylic acid ester as the monomer unit having the largest mass ratio. Examples of the (meth) acrylic acid ester include (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester. The acrylic resin may contain a monomer unit derived from another component copolymerizable with the (meth) acrylic acid ester. Examples of the other components include functional groups such as a carboxy group-containing monomer, an acid anhydride monomer, a hydroxy group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide, and acrylic nitrile. Examples thereof include monomers and various polyfunctional monomers. From the viewpoint of achieving high cohesive force in the die bond layer, the acrylic resin is composed of a (meth) acrylic acid ester (particularly, a (meth) acrylic acid alkyl ester having an alkyl group having 4 or less carbon atoms) and a carboxy group-containing monomer. It is preferable that the polymer is a copolymer of a nitrogen atom-containing monomer and a polyfunctional monomer (particularly, a polyglycidyl-based polyfunctional monomer), and ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile, and the like. More preferably, it is a copolymer with polyglycidyl (meth) acrylate.

The die bond layer 3 may contain one kind or two or more kinds of other components, if necessary. Other components include, for example, flame retardants, silane coupling agents, and ion trapping agents.

The thickness of the die bond layer 3 is not particularly limited, but is, for example, 1 μm or more and 180 μm or less. Such a thickness may be 20 μm or more and 160 μm or less, or 40 μm or more and 140 μm or less.
The thickness of the die bond layer 3 is determined by, for example, using a dial gauge (manufactured by PEACOCK, model R-205), measuring the thickness of any five randomly selected points, and arithmetically averaging these thicknesses. be able to.

The dicing die bond film 20 according to the present embodiment is used, for example, as an auxiliary tool for manufacturing a semiconductor integrated circuit. Hereinafter, specific examples of using the dicing die bond film 20 will be described.
Hereinafter, an example using the dicing dicing die bond film 20 in which the base material 1 is one layer will be described.

The methods for manufacturing semiconductor integrated circuits are a half-cut process in which a groove is formed in the semiconductor wafer so that the semiconductor wafer is processed into chips (dies) by a cutting process, and a semiconductor wafer after the half-cut process is ground to reduce the thickness. A back grind process, a mounting process in which one surface (the surface opposite to the circuit surface) of the semiconductor wafer after the back grind process is attached to the die bond layer 3 and the semiconductor wafer is fixed to the dicing tape 10, and a half-cut process. The expanding step of widening the distance between the semiconductor chips, the calf maintenance step of maintaining the distance between the semiconductor chips, and the state where the die bond layer 3 is attached by peeling between the die bond layer 3 and the pressure-sensitive adhesive layer 2. It has a pickup step of taking out a semiconductor chip (die) and a die bond step of adhering the semiconductor chip (die) to which the die bond layer 3 is attached to an adherend. When carrying out these steps, the dicing die bond film 20 of the present embodiment is used as a manufacturing auxiliary tool.

In the half-cut step, as shown in FIGS. 3A and 3B, a half-cut process for cutting the semiconductor integrated circuit into small pieces (dies) is performed. Specifically, the wafer processing tape T is attached to the surface of the semiconductor wafer W opposite to the circuit surface (see FIG. 3A). Further, the dicing ring R is attached to the wafer processing tape T (see FIG. 3A). With the wafer processing tape T attached, a groove for division is formed (see FIG. 3B). In the backgrinding process, as shown in FIGS. 3C and 3D, the semiconductor wafer is ground to reduce its thickness. Specifically, while the backgrinding tape G is attached to the surface on which the groove is formed, the wafer processing tape T attached first is peeled off (see FIG. 3C). With the back grind tape G attached, grinding is performed until the semiconductor wafer W has a predetermined thickness (see FIG. 3D).

In the mounting step, as shown in FIGS. 4A to 4B, the dicing ring R is attached to the adhesive layer 2 of the dicing tape 10, and then the half-cut semiconductor wafer W is attached to the surface of the exposed die bond layer 3. (See FIG. 4A). Then, the back grind tape G is peeled off from the semiconductor wafer W (see FIG. 4B).

In the expanding step, the dicing ring R is fixed to the holder H of the expanding device as shown in FIGS. 5A to 5C. The dicing die bond film 20 is stretched so as to spread in the plane direction by pushing up the dicing die bond film 20 from the lower side by using the push-up member U provided in the expanding device (see FIG. 5B). As a result, the semiconductor wafer W that has been half-cut is cut under a specific temperature condition. The above temperature conditions are, for example, −15 to 25 ° C., preferably −15 to 10 ° C., and more preferably −15 to 0 ° C. The expanded state is released by lowering the push-up member U (see FIG. 4C).
Further, in the expanding step, as shown in FIGS. 6A to 6B, higher temperature conditions (for example, 20 ° C to 50 ° C, preferably 30 ° C to 50 ° C, and more preferably 40 ° C to 50 ° C). In), the dicing tape 10 is stretched so as to increase the area. As a result, the cut adjacent semiconductor chips are separated from each other in the plane direction of the film surface, and the distance is further widened.
Here, in the dicing die bond film 20 according to the present embodiment, the semiconductor wafer mounting base material according to the present embodiment is used as the base material 1, and the semiconductor wafer mounting base material is broken at −15 ° C. Since the elongation is 300% or more and the breaking strength at −15 ° C. is 20 N or more, the substrate for mounting the semiconductor wafer is relatively hard to tear in the expanding step, and the die bond layer 3 is compared. It can be divided sufficiently.
Further, since the semiconductor wafer mounting base material further has a layer containing an elastomer resin, the semiconductor wafer mounting base material becomes more difficult to tear in the expanding step, and the die bond layer 3 is further formed. It can be cut even more sufficiently.
Further, in the semiconductor wafer mounting base material, since the elastomer resin contains an olefin-based elastomer resin, the semiconductor wafer mounting base material becomes more difficult to tear in the expanding step, and the die bond layer 3 is formed. It can be cut even more sufficiently.
Further, since the thickness of the semiconductor wafer mounting base material is 90 μm or more and 130 μm or less, the semiconductor wafer mounting base material is more difficult to tear in the expanding step, and the die bond layer is more sufficiently sufficient. Can be divided into.

A series of steps from the half-cutting step to the expanding step may be referred to as a "DBG (Dicking Before Grinding) cutting process".
Further, in the half-cut step, a modified region forming step is performed so that the semiconductor wafer can be easily divided by the planned division line by irradiating the planned division line on the semiconductor wafer with a laser beam to form a modified region. Can also be replaced with. A series of steps from the modified region forming configuration to the expanding step may be referred to as "SDBG (Stealth Dicing Before Grinding) cutting process".

In the calf maintenance step, as shown in FIG. 7, hot air (the set value of the device that generates hot air is, for example, 200 to 250 ° C.) is applied to the dicing tape 10 to heat-shrink the dicing tape 10 and then cool and solidify the dicing tape 10. , Maintain the distance (calf) between the adjacent semiconductor chips that are cut.

In the pick-up step, as shown in FIG. 8, the semiconductor chip to which the die bond layer 3 is attached (hereinafter, also referred to as a semiconductor chip with a die bond layer) is peeled from the adhesive layer 2 of the dicing tape 10. Specifically, the pin member P is raised to push up the semiconductor chip with a die bond layer to be picked up via the dicing tape 10. The pushed-up semiconductor chip with a die bond layer is held by the suction jig J.

In the die bond process, the semiconductor chip with the die bond layer is adhered to an adherend (wiring substrate).
In the manufacture of the above-mentioned semiconductor integrated circuit, an example in which the dicing die bond film 20 is used as an auxiliary tool has been described. However, even when the dicing tape 10 is used as an auxiliary tool, the semiconductor integrated circuit is manufactured in the same manner as described above. can do.

The dicing die bond film according to the present invention is not limited to the above embodiment. Further, the dicing die bond film according to the present invention is not limited by the above-mentioned action and effect. The dicing die bond film according to the present invention can be variously modified without departing from the gist of the present invention.

Next, the present invention will be described in more detail with reference to examples. The following examples are for the purpose of explaining the present invention in more detail, and do not limit the scope of the present invention.

[Example 1]
<Molding of base material (base material for mounting semiconductor wafers)>
Using a two-kind three-layer extrusion T-die molding machine, a three-layer structure of A layer / B layer / C layer (the B layer is the central layer, and the outer A layer and the C layer are laminated on both sides of the B layer 3). Layer structure: The A layer is the first layer, the B layer is the second layer, and the C layer is the third layer).
Metallocene PP resin (trade name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation) was used as the resin for the A layer and the C layer, and the metallocene PP resin contained 20% by mass of an antistatic agent.
The resin of the B layer is a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin is Vistamax 3980 (manufactured by Exxon Mobile), which is a propylene-based elastomer resin). As the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less, Evaflex (registered trademark) P1007 (manufactured by Mitsui Dow Polychemical Co., Ltd.) was used.
In the B layer, the ratio of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) W ₁ of the elastomer resin and the second EVA resin is 0.4 (that is, Vistamax). : Elastomer flex = 7: 3) mixed.
The extrusion molding was performed at a die temperature of 190 ° C. That is, the A layer, the B layer, and the C layer were extruded at 190 ° C. The thickness of the base material obtained by extrusion molding was 110 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer: B layer: C layer = 1: 10: 1.
After the molded base material was sufficiently solidified, the solidified base material was wound into a roll so that the C layer became the innermost layer, which was the innermost layer, to form a roll body.
As for the thickness of the base material according to Example 1, a dial gauge (manufactured by PEACOCK, model R-205) was used to measure the thickness of any five randomly selected points, and these thicknesses were measured. It was calculated by arithmetic averaging.
The thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the base material with SEM. Specifically, a frozen microtome (manufactured by Daiwa Kouki Kogyo Co., Ltd.) was used, and the cross section cut out by cutting the base material in the thickness direction was observed by SEM.
The thickness of each layer was obtained by measuring the thickness of the cut cross section at an arbitrary five points for each layer and arithmetically averaging the values of the measured thickness for each layer.
<Making dicing tape>
The pressure-sensitive adhesive composition was applied from the roll-shaped substrate to one surface of the substrate using an applicator so as to have a thickness of 30 μm. The base material after applying the pressure-sensitive adhesive composition was heated and dried at 110 ° C. for 3 minutes to form a pressure-sensitive adhesive layer, whereby the dicing tape according to Example 1 was obtained.
The pressure-sensitive adhesive composition was prepared as follows.
First, the first resin is obtained by mixing 210 parts by mass of LA (lauryl acrylate), 170 parts by mass of INA (isonononyl acrylate), 60 parts by mass of HEA (hydroxyethyl acrylate), and 1.0 part by mass of Niper BW (benzoyl peroxide). The composition was obtained.
Next, the first resin composition was added into the round bottom separable flask of the experimental apparatus for polymerization equipped with a round bottom separable flask (capacity 1 L), a thermometer, a nitrogen introduction tube, and a stirring blade. While stirring the first resin composition, the liquid temperature of the first resin composition was set to room temperature (23 ° C.), and the inside of the round bottom separable flask was replaced with nitrogen for 6 hours.
With nitrogen flowing into the round-bottomed separable flask, the liquid temperature of the first resin composition was maintained at 62 ° C. for 3 hours while stirring the first resin composition, and then at 75 ° C. After holding for 2 hours, the INA, the HEA, and the AIBN were polymerized to obtain a second resin composition. After that, the inflow of nitrogen into the round bottom separable flask was stopped.
After cooling the second resin composition until the liquid temperature reaches room temperature, 2-isocyanatoethyl methacrylate (manufactured by Showa Denko Co., Ltd.) is used as a compound having a polymerizable carbon-carbon double bond in the second resin composition. , Trade name "Carens MOI (registered trademark)") 48 parts by mass and dibutyltin dilaurate IV (manufactured by Wako Pure Chemical Industries, Ltd.) 0.1 parts by mass to obtain a third resin composition under an air atmosphere. The mixture was stirred at a liquid temperature of 50 ° C.
Next, in the third resin composition, 1.5 parts by mass and 5 parts by mass of Coronate L (isocyanate compound) and Omnirad127D (photopolymerization initiator) are added to 100 parts by mass of the polymer solid content, respectively, to form a pressure-sensitive adhesive. The thing was prepared.
<Preparation of dicing die bond film>
Acrylic resin (manufactured by Nagase ChemteX, trade name "SG-N80", glass transition temperature -23 ° C) 100 parts by mass, epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name "EPPN 501HY") 210 parts by mass, phenol 100 parts by mass of resin (manufactured by Gunei Chemical Industry Co., Ltd., trade name "LVR8210-DL"), 33 parts by mass of phenolic resin (manufactured by Meiwa Kasei Co., Ltd., trade name "HF-1M"), spherical silica (manufactured by Admatex) , Product name "SE-2050MCV") 440 parts by mass, silane coupling agent (Shinetsu Chemical Co., Ltd., product name "KBM-303") 3 parts by mass, and curing catalyst (manufactured by Hokuko Chemical Co., Ltd., product name "TPP-" K ”) 0.5 parts by mass was added to the methyl ethyl ketone and mixed to obtain a die bond composition.
Next, the die bond composition was applied to a surface of a PET-based separator (thickness 50 μm), which was a release liner, so as to have a thickness of 40 μm using an applicator, and dried at 130 ° C. for 2 minutes. Then, the solvent was removed from the die bond composition, and a 40 μm adhesive film was prepared on the release liner. Then, the three adhesive films thus produced were bonded together using a roll laminator to produce an adhesive film having a thickness of 120 μm. In this bonding, the bonding speed was 10 mm / sec, the temperature condition was 90 ° C., and the pressure condition was 0.15 MPa.
Next, the side of the die bond sheet on which the release sheet is not laminated is bonded onto the pressure-sensitive adhesive layer of the dicing tape according to the first embodiment, and then the release liner is peeled off from the die bond layer. A dicing die bond film provided with a dicing layer (that is, a dicing die bond film according to Example 1) was obtained.

[Example 2]
<Molding of base material (base material for mounting semiconductor wafers)>
Using a two-kind three-layer extrusion T-die molding machine, a three-layer structure of A layer / B layer / C layer (the B layer is the central layer, and the outer A layer and the C layer are laminated on both sides of the B layer 3). Layer structure: The A layer is the first layer, the B layer is the second layer, and the C layer is the third layer).
The resin of the A layer and the C layer is a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin is Vistamax 3980 (Exxon Mobile), which is a propylene-based elastomer resin. EVAflex (registered trademark) P1007 (manufactured by Mitsui Dou Polychemical) is used as the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less. , 20% by mass of the antistatic agent was contained in this mixed resin.
The resin of the B layer is a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin is Vistamax 3980 (Exxon Mobile Co., Ltd.), which is a propylene-based elastomer resin. The EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less is Evaflex (registered trademark) P1007 (manufactured by Mitsui Dow Polychemical Co., Ltd.). ..
In the A layer, the B layer, and the C layer, the ratio of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) W ₁ of the elastomer resin and the second EVA resin is 0.4. It was mixed so as to be (that is, Vistamax: Evaflex = 7: 3).
The extrusion molding was performed at a die temperature of 190 ° C. That is, the A layer, the B layer, and the C layer were extruded at 190 ° C. The thickness of the base material obtained by extrusion molding was 110 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer: B layer: C layer = 1: 10: 1.
After the molded base material was sufficiently solidified, the solidified base material was wound into a roll so that the C layer became the innermost layer, which was the innermost layer, to form a roll body.
As for the thickness of the base material according to Example 2, a dial gauge (manufactured by PEACOCK, model R-205) was used to measure the thickness of any five randomly selected points, and these thicknesses were measured. It was calculated by arithmetic averaging.
Further, the thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the base material with SEM as described in Example 1.
<Making dicing tape>
The dicing tape according to Example 2 was produced in the same manner as in Example 1.
<Preparation of dicing die bond film>
The dicing die bond film according to Example 2 was produced in the same manner as in Example 1.

[Example 3]
<Molding of base material (base material for mounting semiconductor wafers)>
Using a two-kind two-layer extrusion T-die molding machine, a two-layer structure of A layer / B layer (a two-layer structure in which the A layer is laminated on the B layer. The A layer is the first layer and the B layer. Is the second layer) was molded.
As the resin of the A layer, a metallocene PP resin (trade name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation) was used, and the metallocene PP resin contained 20% by mass of an antistatic agent.
The resin of the B layer is a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin is Vistamax 3980 (Exxon Mobile Co., Ltd.), which is a propylene-based elastomer resin. The EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less is Evaflex (registered trademark) P1007 (manufactured by Mitsui Dow Polychemical Co., Ltd.). ..
In the B layer, the ratio of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) W ₁ of the elastomer resin and the second EVA resin is 0.4 (that is, Vistamax). : Elastomer flex = 7: 3) mixed.
The extrusion molding was performed at a die temperature of 190 ° C. That is, the A layer and the B layer were extruded at 190 ° C. The thickness of the base material obtained by extrusion molding was 110 μm. The ratio of the thicknesses of the A layer and the B layer (layer thickness ratio) was A layer: B layer = 1:20.
After the molded base material was sufficiently solidified, the solidified base material was wound into a roll so that the B layer became the innermost layer, which was the innermost layer, to form a roll body.
As for the thickness of the base material according to Example 3, a dial gauge (manufactured by PEACOCK, model R-205) was used to measure the thickness of any five randomly selected points, and these thicknesses were measured. It was calculated by arithmetic averaging.
Further, the thicknesses of the A layer and the B layer were measured by observing the cross section of the base material with SEM as described in Example 1.
<Making dicing tape>
The dicing tape according to Example 3 was produced in the same manner as in Example 1.
<Preparation of dicing die bond film>
The dicing die bond film according to Example 3 was produced in the same manner as in Example 1.

[Example 4]
<Molding of base material (base material for mounting semiconductor wafers)>
Using a two-kind three-layer extrusion T-die molding machine, a three-layer structure of A layer / B layer / C layer (the B layer is the central layer, and the outer A layer and the C layer are laminated on both sides of the B layer 3). Layer structure: The A layer is the first layer, the B layer is the second layer, and the C layer is the third layer).
The resin of the A layer and the C layer is a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin is Vistamax 3980 (Exxon Mobile), which is a propylene-based elastomer resin. EVAflex (registered trademark) P1007 (manufactured by Mitsui Dou Polychemical) is used as the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less. , 20% by mass of the antistatic agent was contained in this mixed resin.
The resin of the B layer is a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin is Vistamax 3980 (Exxon Mobile Co., Ltd.), which is a propylene-based elastomer resin. The EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less is Evaflex (registered trademark) P1007 (manufactured by Mitsui Dow Polychemical Co., Ltd.). ..
In the A layer, the B layer, and the C layer, the ratio of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) W ₁ of the elastomer resin and the second EVA resin is 0.4. It was mixed so as to be (that is, Vistamax: Evaflex = 7: 3).
The extrusion molding was performed at a die temperature of 190 ° C. That is, the A layer, the B layer, and the C layer were extruded at 190 ° C. The thickness of the base material obtained by extrusion molding was 120 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer: B layer: C layer = 1: 10: 1.
After the molded base material was sufficiently solidified, the solidified base material was wound into a roll so that the C layer became the innermost layer, which was the innermost layer, to form a roll body.
As for the thickness of the base material according to Example 4, a dial gauge (manufactured by PEACOCK, model R-205) was used to measure the thickness of any five randomly selected points, and these thicknesses were measured. It was calculated by arithmetic averaging.
Further, the thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the base material with SEM as described in Example 1.
<Making dicing tape>
The dicing tape according to Example 4 was produced in the same manner as in Example 1.
<Preparation of dicing die bond film>
The dicing die bond film according to Example 4 was produced in the same manner as in Example 1.

[Example 5]
<Molding of base material (base material for mounting semiconductor wafers)>
Using a two-kind two-layer extrusion T-die molding machine, a two-layer structure of A layer / B layer (a two-layer structure in which the A layer is laminated on the B layer. The A layer is the first layer and the B layer. Is the second layer) was molded.
As the resin of the A layer, a metallocene PP resin (trade name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation) was used, and the metallocene PP resin contained 20% by mass of an antistatic agent.
The resin of the B layer is a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin is Vistamax 3980 (Exxon Mobile Co., Ltd.), which is a propylene-based elastomer resin. The EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less is Evaflex (registered trademark) P1007 (manufactured by Mitsui Dow Polychemical Co., Ltd.). ..
In the B layer, the ratio of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) W ₁ of the elastomer resin and the second EVA resin is 0.4 (that is, Vistamax). : Elastomer flex = 7: 3) mixed.
The extrusion molding was performed at a die temperature of 190 ° C. That is, the A layer and the B layer were extruded at 190 ° C. The thickness of the base material obtained by extrusion molding was 120 μm. The ratio of the thicknesses of the A layer and the B layer (layer thickness ratio) was A layer: B layer = 1:20.
After the molded base material was sufficiently solidified, the solidified base material was wound into a roll so that the B layer became the innermost layer, which was the innermost layer, to form a roll body.
As for the thickness of the base material according to Example 5, a dial gauge (manufactured by PEACOCK, model R-205) was used to measure the thickness of any five randomly selected points, and these thicknesses were measured. It was calculated by arithmetic averaging.
Further, the thicknesses of the A layer and the B layer were measured by observing the cross section of the base material with SEM as described in Example 1.
<Making dicing tape>
The dicing tape according to Example 5 was produced in the same manner as in Example 1.
<Preparation of dicing die bond film>
The dicing die bond film according to Example 5 was produced in the same manner as in Example 1.

[Example 6]
<Molding of base material (base material for mounting semiconductor wafers)>
Using a two-kind three-layer extrusion T-die molding machine, a three-layer structure of A layer / B layer / C layer (the B layer is the central layer, and the outer A layer and the C layer are laminated on both sides of the B layer 3). Layer structure: The A layer is the first layer, the B layer is the second layer, and the C layer is the third layer).
Metallocene PP resin (trade name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation) was used as the resin for the A layer and the C layer, and the metallocene PP resin contained 20% by mass of an antistatic agent.
The resin of the B layer is a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin is Vistamax 3980 (manufactured by Exxon Mobile), which is a propylene-based elastomer resin). As the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less, Evaflex (registered trademark) P1007 (manufactured by Mitsui Dow Polychemical Co., Ltd.) was used.
In the B layer, the ratio of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) W ₁ of the elastomer resin and the second EVA resin is 0.4 (that is, Vistamax). : Elastomer flex = 7: 3) mixed.
The extrusion molding was performed at a die temperature of 190 ° C. That is, the A layer, the B layer, and the C layer were extruded at 190 ° C. The thickness of the base material obtained by extrusion molding was 110 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer: B layer: C layer = 1: 15: 1.
After the molded base material was sufficiently solidified, the solidified base material was wound into a roll so that the C layer became the innermost layer, which was the innermost layer, to form a roll body.
As for the thickness of the base material according to Example 1, a dial gauge (manufactured by PEACOCK, model R-205) was used to measure the thickness of any five randomly selected points, and these thicknesses were measured. It was calculated by arithmetic averaging.
Further, the thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the base material with SEM as described in Example 1.
<Making dicing tape>
The dicing tape according to Example 6 was produced in the same manner as in Example 1.
<Preparation of dicing die bond film>
The dicing die bond film according to Example 6 was produced in the same manner as in Example 1.

[Example 7]
<Molding of base material (base material for mounting semiconductor wafers)>
Using a two-kind three-layer extrusion T-die molding machine, a three-layer structure of A layer / B layer / C layer (the B layer is the central layer, and the outer A layer and the C layer are laminated on both sides of the B layer 3). Layer structure: The A layer is the first layer, the B layer is the second layer, and the C layer is the third layer).
A mixed resin of metallocene PP resin and ionomer resin (metallocene PP resin is Wintech WXK1223 (manufactured by Japan Polypropylene Corporation)) is used as the resin of the A layer and the C layer, and an antistatic agent is added to this mixed resin. It was contained in an amount of 20% by mass.
The resin of the B layer is a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin is Vistamax 3980 (manufactured by Exxon Mobile), which is a propylene-based elastomer resin). As the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less, Evaflex (registered trademark) P1007 (manufactured by Mitsui Dow Polychemical Co., Ltd.) was used.
In the layers A and C, the metallocene PP resin and the ionomer resin are mixed so that the ratio of the mass of the metallocene PP resin to the mass of the ionomer resin (ionomer resin / metallocene PP resin) W ₂ is 0.4. did.
Further, in the B layer, the ratio of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) W ₁ of the elastomer resin and the second EVA resin is 0.4 (that is, Vista). Max: Elastomerx = 7: 3) mixed.
The extrusion molding was performed at a die temperature of 190 ° C. That is, the A layer, the B layer, and the C layer were extruded at 190 ° C. The thickness of the base material obtained by extrusion molding was 110 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer: B layer: C layer = 1: 10: 1.
After the molded base material was sufficiently solidified, the solidified base material was wound into a roll so that the C layer became the innermost layer, which was the innermost layer, to form a roll body.
As for the thickness of the base material according to Example 1, a dial gauge (manufactured by PEACOCK, model R-205) was used to measure the thickness of any five randomly selected points, and these thicknesses were measured. It was calculated by arithmetic averaging.
Further, the thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the base material with SEM as described in Example 1.
<Making dicing tape>
The dicing tape according to Example 7 was produced in the same manner as in Example 1.
<Preparation of dicing die bond film>
The dicing die bond film according to Example 7 was produced in the same manner as in Example 1.

[Example 8]
<Molding of base material (base material for mounting semiconductor wafers)>
A single-layer structure substrate was molded using a single-layer extrusion T-die molding machine.
As the resin constituting the single layer, an EVA resin having a vinyl acetate content of 10% by mass was used.
The extrusion molding was performed at a die temperature of 190 ° C. The thickness of the substrate obtained by extrusion molding was 125 μm.
After the molded base material was sufficiently solidified, the solidified base material was wound into a roll to form a roll body.
As for the thickness of the base material according to Example 8, a dial gauge (manufactured by PEACOCK, model R-205) was used to measure the thickness of any five randomly selected points, and these thicknesses were measured. It was calculated by arithmetic averaging.
<Making dicing tape>
The dicing tape according to Example 8 was produced in the same manner as in Example 1.
<Preparation of dicing die bond film>
The dicing die bond film according to Example 8 was produced in the same manner as in Example 1.

[Example 9]
<Molding of base material (base material for mounting semiconductor wafers)>
Using a two-kind three-layer extrusion T-die molding machine, a three-layer structure of A layer / B layer / C layer (the B layer is the central layer, and the outer A layer and the C layer are laminated on both sides of the B layer 3). Layer structure: The A layer is the first layer, the B layer is the second layer, and the C layer is the third layer).
Metallocene PP resin (trade name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation) was used as the resin for the A layer and the C layer, and the metallocene PP resin contained 20% by mass of an antistatic agent.
As the resin of the B layer, an EVA resin having a vinyl acetate content of 20% by mass or more (the first EVA resin; trade name: Evaflex (registered trademark) EV250, manufactured by Mitsui Dow Polychemical Co., Ltd.) was used.
The extrusion molding was performed at a die temperature of 190 ° C. That is, the A layer, the B layer, and the C layer were extruded at 190 ° C. The thickness of the base material obtained by extrusion molding was 100 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer: B layer: C layer = 1: 10: 1.
After the molded base material was sufficiently solidified, the solidified base material was wound into a roll so that the C layer became the innermost layer, which was the innermost layer, to form a roll body.
As for the thickness of the base material according to Example 9, a dial gauge (manufactured by PEACOCK, model R-205) was used to measure the thickness of any five randomly selected points, and these thicknesses were measured. It was calculated by arithmetic averaging.
Further, the thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the base material with SEM as described in Example 1.
<Making dicing tape>
The dicing tape according to Example 9 was produced in the same manner as in Example 1.
<Preparation of dicing die bond film>
The dicing die bond film according to Example 9 was produced in the same manner as in Example 1.

[Comparative Example 1]
<Molding of base material (base material for mounting semiconductor wafers)>
Using a two-kind three-layer extrusion T-die molding machine, a three-layer structure of A layer / B layer / C layer (the B layer is the central layer, and the outer A layer and the C layer are laminated on both sides of the B layer 3). Layer structure: The A layer is the first layer, the B layer is the second layer, and the C layer is the third layer).
Metallocene PP resin (trade name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation) was used as the resin for the A layer and the C layer, and the metallocene PP resin contained 20% by mass of an antistatic agent.
As the resin of the B layer, an EVA resin having a vinyl acetate content of 20% by mass or more (the first EVA resin; trade name: Evaflex (registered trademark) EV250, manufactured by Mitsui Dow Polychemical Co., Ltd.) was used.
The extrusion molding was performed at a die temperature of 190 ° C. That is, the A layer, the B layer, and the C layer were extruded at 190 ° C. The thickness of the substrate obtained by extrusion molding was 80 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer: B layer: C layer = 1: 10: 1.
After the molded base material was sufficiently solidified, the solidified base material was wound into a roll so that the C layer became the innermost layer, which was the innermost layer, to form a roll body.
As for the thickness of the base material according to Example 9, a dial gauge (manufactured by PEACOCK, model R-205) was used to measure the thickness of any five randomly selected points, and these thicknesses were measured. It was calculated by arithmetic averaging.
Further, the thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the base material with SEM as described in Example 1.
<Making dicing tape>
The dicing tape according to Comparative Example 1 was produced in the same manner as in Example 1.
<Preparation of dicing die bond film>
The dicing die bond film according to Comparative Example 1 was produced in the same manner as in Example 1.

[Comparative Example 2]
<Molding of base material (base material for mounting semiconductor wafers)>
Using a two-kind three-layer extrusion T-die molding machine, a three-layer structure of A layer / B layer / C layer (the B layer is the central layer, and the outer A layer and the C layer are laminated on both sides of the B layer 3). Layer structure: The A layer is the first layer, the B layer is the second layer, and the C layer is the third layer).
Metallocene PP resin (trade name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation) was used as the resin for the A layer and the C layer, and the metallocene PP resin contained 20% by mass of an antistatic agent.
The resin of the B layer is a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin is Vistamax 3980 (manufactured by Exxon Mobile), which is a propylene-based elastomer resin). As the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less, Evaflex (registered trademark) P1007 (manufactured by Mitsui Dow Polychemical Co., Ltd.) was used.
In the B layer, the elastomer resin and the second EVA resin were mixed so that the ratio of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin / elastomer resin) W ₁ was 0.4.
The extrusion molding was performed at a die temperature of 190 ° C. That is, the A layer, the B layer, and the C layer were extruded at 190 ° C. The thickness of the base material obtained by extrusion molding was 110 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer: B layer: C layer = 1: 5: 1.
After the molded base material was sufficiently solidified, the solidified base material was wound into a roll so that the C layer became the innermost layer, which was the innermost layer, to form a roll body.
As for the thickness of the base material according to Example 1, a dial gauge (manufactured by PEACOCK, model R-205) was used to measure the thickness of any five randomly selected points, and these thicknesses were measured. It was calculated by arithmetic averaging.
Further, the thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the base material with SEM as described in Example 1.
<Making dicing tape>
The dicing tape according to Comparative Example 2 was produced in the same manner as in Example 1.
<Preparation of dicing die bond film>
The dicing die bond film according to Comparative Example 2 was produced in the same manner as in Example 1.

(Fracture elongation and breaking strength at -15 ° C)
The breaking elongation and breaking strength at −15 ° C. were measured for the substrate according to each example.
The breaking elongation at −15 ° C. and the breaking strength at −15 ° C. were determined as follows.
For details on the elongation at break, use a dicing tape with a length of 120 mm (measured length, L ₀ ) and a width of 10 mm as a test piece, and use a tensile tester (Autograph AG-IS, manufactured by Shimadzu Corporation) to measure the temperature. The test piece was pulled in the length direction under the conditions of −15 ° C., a chuck distance of 50 mm, and a tensile speed of 1000 mm / min, and the length (L ₁ ) when the test piece broke was measured.
Then, the elongation at break E at −15 ° C. was calculated based on the following formula.

Elongation at break E = (L ₁ − L ₀ ) / L ₀ × 100

The breaking strength is measured by measuring the force applied when the test piece breaks when the tensile test is performed under the same conditions as above using the test piece and the tensile tester. I asked.
The values of breaking elongation and breaking strength measured for the substrate according to each example are shown in Table 1 below.

(Cutability of die bond layer and tearing of base material)
The dicing die bond film according to each example has a semiconductor wafer (planar dimension 12 inch (300 mm), thickness 0.060 mm. The semiconductor wafer is cut into a plurality of semiconductor chips having a size of 10 mm in length × 5 mm in width by DBG. ) And the dicing ring were attached. Next, the semiconductor wafer and the die bond layer were cut (mainly, the die bond layer was cut) using the die separator DDS2300 (manufactured by DISCO Corporation), and the breakability of the die bond layer and the tearing of the base material were evaluated.
The semiconductor wafer is divided into the sizes of the semiconductor chips (length 10 mm × width 5 mm × thickness 0.060 mm) divided by the DBG by the above division.

The splittability of the die bond layer was evaluated in detail as follows.
First, in a cool expander unit, the semiconductor wafer and the die bond layer were cut under the conditions of an expand temperature of −15 ° C., an expand speed of 200 mm / sec, and an expand amount of 15 mm to obtain a semiconductor chip with a die bond layer.
Next, expansion was performed under the conditions of room temperature, an expanding speed of 1 mm / sec, and an expanding amount of 7 mm. Then, the dicing die bond film at the boundary with the outer peripheral edge of the bare wafer was heat-shrinked under the conditions of a heat temperature of 250 ° C., a heat distance of 20 mm, and a rotation speed of 5 ° / sec while maintaining the expanded state.
Next, the split portion of the semiconductor chip with the die bond layer was observed by microscopic observation, and the split rate was calculated. Then, the case where the cutting rate was 90% or more was evaluated as 〇, the case where the cutting rate was 80% or more and less than 90% was evaluated as Δ, and the case where the cutting rate was less than 80% was evaluated as ×.
Regarding the tearing of the base material, after obtaining the semiconductor chip with the die bond layer in the cool expand unit, the base material was visually observed, and those in which no tear occurred in the base material were evaluated as 〇. Those in which the base material was locally stretched were evaluated as Δ, and those in which tears occurred were evaluated as ×.
For each example, the results of evaluation of the splittability of the die bond layer and the tearing of the base material are shown in Table 1 below.

(Calf maintainability)
The dicing die bond film according to each example has a semiconductor wafer (planar dimension 12 inch (300 mm), thickness 0.060 mm. The semiconductor wafer is cut into a plurality of semiconductor chips having a size of 10 mm in length × 5 mm in width by DBG. ) And the dicing ring were attached. Next, the semiconductor wafer and the die bond layer were cut (mainly the die bond layer was cut) using the die separator DDS2300 (manufactured by DISCO Corporation), and the calf maintainability after the cut was evaluated.
The semiconductor wafer is divided into the sizes of the semiconductor chips (length 10 mm × width 5 mm × thickness 0.060 mm) divided by the DBG by the above division.

The calf maintainability was evaluated in detail as follows.
First, in a cool expander unit, the bare wafer and the die bond layer were cut under the conditions of an expand temperature of −15 ° C., an expand speed of 200 mm / sec, and an expand amount of 15 mm to obtain a plurality of semiconductor chips with a die bond layer.
Next, room temperature expansion was performed under the conditions of room temperature, an expanding speed of 1 mm / sec, and an expanding amount of 7 mm. Then, the dicing die bond film at the boundary with the outer peripheral edge of the bare wafer was heat-shrinked under the conditions of a heat temperature of 250 ° C., a heat distance of 20 mm, and a rotation speed of 5 ° / sec while maintaining the expanded state.
Next, the calf was measured using a digital microscope (VHX-6000, manufactured by KEYENCE CORPORATION). Specifically, after the heat expansion is completed (after heat shrinkage), the distance between one chip and the other chip in the split portion (hereinafter, also referred to as the distance length) is observed with a digital microscope, and the distance length is observed. Was measured. The interval length was measured in each of the MD direction and the TD direction at five arbitrarily selected points. As the calf, the minimum value among the measured values of the interval length was adopted.
If the calf is 30 μm or more, it is evaluated as ○ (the calf is sufficiently maintained), and if the calf is 20 μm or more and less than 30 μm, it is evaluated as Δ (the calf is maintained but not sufficient). The evaluation was made, and if the calf was 20 μm or less, it was evaluated as × (the calf is not sufficient).
The 5 arbitrarily selected locations are the outermost peripheral portion of the circular wafer, 4 locations separated from each other by about 90 ° in the circumferential direction, and the vicinity of the center of the circular wafer.

From Table 1, in Examples 1 to 9, the evaluation of the splittability of the die bond layer was 〇 or Δ, and no evaluation of × was found, whereas in Comparative Example 1, the die bond layer was evaluated. It can be seen that the evaluation of the splittability of is ×.
Further, from Table 1, in Examples 1 to 9, the evaluation of the tearing of the base material was 〇 or Δ, and no × was found, whereas in Comparative Example 2, the base material was evaluated. It can be seen that the evaluation of tear is ×.
From this result, by setting the breaking elongation at -15 ° C to 300% or more and the breaking strength at -15 ° C to 20 N or more, the dicing tape can be improved in breaking property and the base material can be used. It can be seen that it is possible to suppress tearing at the same time.
Further, in Examples 1 to 9, the evaluation of the maintainability of the calf was also 〇 or Δ, and no XX was found.
From this, it can be seen that in Examples 1 to 9, the maintainability of the calf is also relatively good.

1 Base material 2 Adhesive layer 3 Dicing layer 10 Dicing tape 20 Dicing die bond film G Back grind tape H Holder J Adhesive jig P pin member R Dicing ring T Wafer processing tape U Push-up member W Semiconductor wafer

Claims (6)

A substrate for mounting a semiconductor wafer having a breaking elongation at -15 ° C of 300% or more and a breaking strength at -15 ° C of 20 N or more. The substrate for mounting a semiconductor wafer according to claim 1, which has at least one layer containing an elastomer resin. The substrate for mounting a semiconductor wafer according to claim 2, wherein the elastomer resin is an olefin-based elastomer resin. The substrate for mounting a semiconductor wafer according to any one of claims 1 to 3, wherein the thickness is 90 μm or more and 130 μm or less. With the base material
With a pressure-sensitive adhesive layer laminated on the substrate,
The dicing tape whose base material is the base material for mounting a semiconductor wafer according to any one of claims 1 to 4. A dicing tape with an adhesive layer laminated on a base material,
A dicing layer laminated on the pressure-sensitive adhesive layer of the dicing tape is provided.
The dicing die bond film in which the base material is the base material for mounting a semiconductor wafer according to any one of claims 1 to 4.

Images