CN111004588A

CN111004588A - Dicing die bonding film

Info

Publication number: CN111004588A
Application number: CN201910933903.8A
Authority: CN
Inventors: 杉村敏正; 大西谦司; 高本尚英; 户崎裕
Original assignee: Nitto Denko Corp
Current assignee: Nitto Denko Corp
Priority date: 2018-10-05
Filing date: 2019-09-29
Publication date: 2020-04-14
Also published as: JP7075326B2; TW202020996A; TWI814905B; KR20200039567A; JP2020061423A

Abstract

The invention provides a dicing die-bonding film which is less likely to float between an adhesive layer and an adhesive layer during cold expansion and normal temperature expansion, and thereafter. A dicing die-bonding film comprising: a dicing tape having a laminated structure including a substrate and an adhesive layer; and an adhesive layer that is in releasable close contact with the pressure-sensitive adhesive layer in the dicing tape, wherein the surface of the pressure-sensitive adhesive layer before radiation curing of the dicing die-bonding film has a hardness of 0.04 to 0.3MPa by nanoindentation method at a temperature of 23 ℃ and a frequency of 100Hz, and a peel force between the pressure-sensitive adhesive layer before radiation curing and the adhesive layer in a T-peel test at a temperature of 23 ℃ and a peel speed of 300 mm/min is 0.3N/20mm or more.

Description

Dicing die bonding film

Technical Field

The present invention relates to dicing die-bonding films. More specifically, the present invention relates to a dicing die-bonding film that can be used in a process of manufacturing a semiconductor device.

Background

In the manufacturing process of a semiconductor device, in order to obtain a semiconductor chip having an adhesive film for die bonding having a size corresponding to that of the chip, that is, a semiconductor chip with an adhesive layer for die bonding, dicing of the die bonding film may be used. The dicing die-bonding film has a size corresponding to a semiconductor wafer to be processed, and includes, for example, a dicing tape including a base material and an adhesive layer, and a die-bonding film (adhesive layer) releasably adhering to the adhesive layer side.

As one of methods for obtaining a semiconductor chip with an adhesive layer by dicing a die bond film, a method is known which includes the following steps: and expanding the dicing tape in the dicing die-bonding film for cutting the die-bonding film. The method comprises bonding a semiconductor wafer on a die bonding film obtained by cutting the die bonding film. The semiconductor wafer is processed so that it can be subsequently cleaved together with the die bond film and singulated into a plurality of semiconductor chips, for example.

Then, in order to cut the die-bonding film on the dicing tape, the dicing tape of the dicing die-bonding film is stretched in a two-dimensional direction including a radial direction and a circumferential direction of the semiconductor wafer using an expanding device. In this expanding step, the semiconductor wafer located on the die bond film is also cut at a position corresponding to the cut position in the die bond film, and the semiconductor wafer is singulated into a plurality of semiconductor chips on the dicing die bond film or the dicing tape.

Then, a second expanding step is performed for widening the separation distance with respect to the plurality of the semiconductor chips with the die bond film after the dicing on the dicing tape. After the cleaning step, for example, each semiconductor chip is lifted up from the lower side of the dicing tape together with the die bonding film which is in close contact with the semiconductor chip and has a size corresponding to the chip by the needle member of the pickup mechanism, and is picked up from the dicing tape. Thus, a semiconductor chip with a die bond film, i.e., an adhesive layer, is obtained. The semiconductor chip with the adhesive layer is fixed to an adherend such as a mounting board by die bonding via the adhesive layer.

Techniques relating to dicing die-bonding films used as described above are described in, for example, patent documents 1 to 3 below.

Documents of the prior art

Patent document

Patent document 1: japanese laid-open patent publication No. 2007-2173

Patent document 2: japanese patent application laid-open No. 2010-177401

Patent document 3: japanese patent laid-open publication No. 2016-115804

Disclosure of Invention

Problems to be solved by the invention

In recent years, due to the demand for higher capacity of semiconductors, circuit layers have become multilayered and silicon layers have become thinner. However, since the circuit layer has a multilayer structure, the thickness (total thickness) of the circuit layer increases, and the proportion of the resin contained in the circuit layer tends to increase, so that the difference in linear expansion coefficient between the circuit layer having a multilayer structure and the silicon layer having a thin layer structure becomes significant, and the semiconductor chip is likely to warp. Therefore, when a conventional dicing die-bonding film is used, particularly in a semiconductor chip in which a circuit layer with a die-bonding film obtained after dicing is multilayered, there is a problem that an interface between an adhesive layer of a dicing tape and the die-bonding film is easily peeled (lifted) in a spreading step (cold spreading and normal temperature spreading described later) and thereafter (for example, a period until a cleaning step and picking up). If the floating occurs, the semiconductor chip is liable to slip off after the expanding process (cleaning process, handling, etc.).

The present invention has been made in view of the above problems, and an object thereof is to provide a dicing die-bonding film in which floating between an adhesive layer and an adhesive layer is less likely to occur during cold expansion, normal temperature expansion, and the subsequent processes.

Means for solving the problems

As a result of intensive studies to achieve the above object, the present inventors have found that, when a dicing die-bonding film is used, floating is less likely to occur between an adhesive layer and an adhesive layer during cold expansion, normal temperature expansion, and the subsequent processes, the dicing die-bonding film including: a dicing tape having a laminated structure including a substrate and an adhesive layer; and an adhesive layer that is in releasable close contact with the pressure-sensitive adhesive layer in the dicing tape, wherein the surface of the pressure-sensitive adhesive layer before radiation curing of the dicing die-bonding film has a hardness of 0.04 to 0.8MPa by nanoindentation method at a temperature of 23 ℃ and a frequency of 100Hz, and a peel force between the pressure-sensitive adhesive layer before radiation curing and the adhesive layer in a T-peel test at a temperature of 23 ℃ and a peel speed of 300 mm/min is 0.3N/20mm or more. The present invention has been completed based on the above findings.

That is, the present invention provides a dicing die-bonding film including: a dicing tape having a laminated structure including a substrate and an adhesive layer; and an adhesive layer that is in releasable close contact with the pressure-sensitive adhesive layer in the dicing tape, wherein the surface of the pressure-sensitive adhesive layer before radiation curing of the dicing die-bonding film has a hardness of 0.04 to 0.8MPa by nanoindentation method at a temperature of 23 ℃ and a frequency of 100Hz, and a peel force between the pressure-sensitive adhesive layer before radiation curing and the adhesive layer in a T-peel test at a temperature of 23 ℃ and a peel speed of 300 mm/min is 0.3N/20mm or more.

The dicing die-bonding film of the present invention includes a dicing tape and an adhesive layer. The dicing tape has a laminated structure including a substrate and an adhesive layer. The adhesive layer is releasably adhered to the adhesive layer in the dicing tape. The surface of the pressure-sensitive adhesive layer before radiation curing of the pressure-sensitive adhesive layer of the dicing tape has a hardness of 0.04 to 0.8MPa by nanoindentation method at a temperature of 23 ℃ and a frequency of 100Hz, and a peel force between the pressure-sensitive adhesive layer before radiation curing and the pressure-sensitive adhesive layer in a T-peel test at a temperature of 23 ℃ and a peel speed of 300 mm/min is 0.3N/20mm or more. The dicing die-bonding film having such a configuration can be used for obtaining a semiconductor chip with an adhesive layer in the manufacturing process of a semiconductor device.

In the manufacturing process of a semiconductor device, as described above, in order to obtain a semiconductor chip with an adhesive layer, a spreading step using a dicing die bonding film, that is, a spreading step for cleaving, may be performed. In this spreading step, it is necessary to appropriately apply a cutting force to the adhesive layer on the dicing tape in the dicing die-bonding film. The adhesive layer of the dicing tape in the dicing die-bonding film of the present invention has a hardness of 0.04 to 0.8MPa based on the nanoindentation method at a temperature of 23 ℃ and a frequency of 100 Hz. The hardness by the nanoindentation method is determined as follows: the load and the press-in depth of the indenter when the indenter is pressed into the surface of the adhesive layer are continuously measured over the time of applying a load and the time of removing the load, and the load-press-in depth curve is obtained. Therefore, the hardness by the nanoindentation method is an index representing the physical properties of the surface of the adhesive layer. By setting the aforementioned hardness by the nanoindentation method of the pressure-sensitive adhesive layer in the dicing die-bonding film of the present invention to 0.04MPa or more, the pressure-sensitive adhesive layer surface is soft, the adhesion between the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer can be made appropriate, and the occurrence of peeling (floating) between the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer during the spreading step and thereafter can be suppressed. Further, by setting the hardness by the nanoindentation method to 0.8MPa or less, it is possible to suppress the adhesive layer from becoming excessively strong, and in the pick-up step described later, the semiconductor chip with the adhesive layer after being cut can be favorably peeled from the adhesive layer, and favorable pick-up can be achieved. The hardness of the pressure-sensitive adhesive layer before radiation curing by the nanoindentation method is within the above range.

In the dicing die-bonding film of the present invention, as described above, the peel force between the pressure-sensitive adhesive layer and the adhesive layer in the T-peel test under the conditions of the temperature of 23 ℃ and the peel speed of 300 mm/min is 0.3N/20mm or more. When the peel force is 0.3N/20mm or more, the adhesiveness between the pressure-sensitive adhesive layer and the adhesive layer can be made appropriate, and the occurrence of peeling (floating) between the pressure-sensitive adhesive layer and the adhesive layer in the spreading step and thereafter can be suppressed.

In the dicing die-bonding film of the present invention, the pressure-sensitive adhesive layer preferably contains a 1 st acrylic polymer, and the 1 st acrylic polymer preferably contains a structural unit derived from a nitrogen atom-containing monomer. The structural unit derived from the nitrogen atom-containing monomer preferably contains a structural unit derived from (meth) acryloylmorpholine. When the pressure-sensitive adhesive layer contains such a 1 st acrylic polymer, the nanoindentation-based hardness is easily brought within the above range, and the peel force is easily brought within the above range, so that the occurrence of peeling (floating) between the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer in the spreading step and the subsequent steps can be suppressed, and the semiconductor chip with the pressure-sensitive adhesive layer after dicing can be favorably peeled from the pressure-sensitive adhesive layer in the pickup step described later, and favorable pickup can be easily achieved.

ADVANTAGEOUS EFFECTS OF INVENTION

The dicing die-bonding film of the present invention is less likely to float between the adhesive layer and the pressure-sensitive adhesive layer in the spreading step using the dicing die-bonding film for obtaining the semiconductor chip with the adhesive layer and in the subsequent steps. In particular, the floating is less likely to occur even when a semiconductor chip having a plurality of circuit layers is used.

Drawings

Fig. 1 is a schematic cross-sectional view showing one embodiment of a dicing die-bonding film of the present invention.

Fig. 2 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1.

Fig. 3 shows a subsequent process to that shown in fig. 2.

Fig. 4 shows a subsequent process to that shown in fig. 3.

Fig. 5 shows a process subsequent to the process shown in fig. 4.

Fig. 6 shows a subsequent process to that shown in fig. 5.

Fig. 7 shows a process subsequent to the process shown in fig. 6.

Fig. 8 shows a part of steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1.

Fig. 9 shows a part of steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1.

Fig. 10 shows a part of steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1.

Fig. 11 shows a part of steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1.

Description of the reference numerals

1 dicing die-bonding film

10 cutting belt

11 base material

12 adhesive layer

20, 21 adhesive layer

W, 30A, 30C semiconductor wafer

30B semiconductor wafer division body

30a dividing groove

30b modified region

31 semiconductor chip

Detailed Description

[ dicing die-bonding film ]

The dicing die-bonding film of the present invention comprises: a dicing tape having a laminated structure including a substrate and an adhesive layer; and an adhesive layer that is releasably adhered to the adhesive layer in the dicing tape. One embodiment of the dicing die-bonding film of the present invention will be described below. Fig. 1 is a schematic cross-sectional view showing one embodiment of a dicing die-bonding film of the present invention.

As shown in fig. 1, the dicing die-bonding film 1 includes a dicing tape 10 and an adhesive layer 20 laminated on the adhesive layer 12 in the dicing tape 10, and can be used in a spreading step in a process of obtaining a semiconductor chip with an adhesive layer in the manufacture of a semiconductor device.

The dicing die-bonding film 1 has a disc shape having a size corresponding to a semiconductor wafer which is a processing object in a manufacturing process of a semiconductor device. The dicing die-bonding film 1 has a diameter in a range of, for example, 345 to 380mm (12-inch wafer-compatible type), 245 to 280mm (8-inch wafer-compatible type), 195 to 230mm (6-inch wafer-compatible type), or 495 to 530mm (18-inch wafer-compatible type). The dicing tape 10 in the dicing die-bonding film 1 has a laminated structure including a base material 11 and an adhesive layer 12.

(substrate)

The base material in the dicing tape is an element that functions as a support in the dicing tape or the dicing die-bonding film. Examples of the substrate include a plastic substrate (particularly, a plastic film). The substrate may be a single layer, or may be a laminate of the same type of substrate or different types of substrates.

Examples of the resin constituting the plastic substrate include: polyolefin resins such as low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homo-polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer; a polyurethane; polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT); a polycarbonate; a polyimide; polyether ether ketone; a polyetherimide; polyamides such as aramid and wholly aromatic polyamide; polyphenylene sulfide; a fluororesin; polyvinyl chloride; polyvinylidene chloride; a cellulose resin; silicone resins, and the like. The base material preferably contains an ethylene-vinyl acetate copolymer as a main component from the viewpoint of ensuring good heat shrinkability of the base material and easily maintaining the chip pitch distance by partial heat shrinkage of a dicing tape or the base material in a room temperature expanding step described later.

The main component of the base material is a component occupying the largest mass ratio among the constituent components. The resin may be used alone or in combination of two or more. When the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer as described later, the substrate preferably has radiation transmittance.

When the substrate is a plastic film, the plastic film may be non-oriented or oriented in at least one direction (unidirectional direction, bidirectional direction, etc.). The plastic film is capable of heat shrinking in at least one direction when oriented in the at least one direction. When the dicing tape has heat shrinkability, the outer peripheral portion of the semiconductor wafer of the dicing tape can be heat shrunk, whereby the semiconductor chips with the adhesive layer after singulation can be fixed in a state where the interval between the semiconductor chips is widened, and therefore the semiconductor chips can be easily picked up. In order to impart isotropic heat shrinkability to the substrate and the dicing tape, the substrate is preferably a biaxially oriented film. The plastic film oriented in at least one direction may be obtained by stretching a non-stretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, or the like).

The heat shrinkage rate of the base material and the dicing tape in a heat treatment test performed at a heating temperature of 100 ℃ for 60 seconds is preferably 1 to 30%, more preferably 2 to 25%, even more preferably 3 to 20%, and particularly preferably 5 to 20%. The heat shrinkage ratio is preferably a heat shrinkage ratio in at least one of the MD direction and the TD direction.

For the purpose of improving adhesion to the pressure-sensitive adhesive layer, holding property, and the like, the pressure-sensitive adhesive layer-side surface of the substrate may be subjected to: physical treatments such as corona discharge treatment, plasma treatment, sanding treatment, ozone exposure treatment, flame exposure treatment, high-voltage electric shock exposure treatment, ionizing radiation treatment, and the like; chemical treatments such as chromic acid treatment; surface treatment such as easy adhesion treatment with a coating agent (primer). In addition, in order to impart antistatic ability, a conductive vapor deposition layer containing a metal, an alloy, an oxide thereof, or the like may be provided on the surface of the base material. The surface treatment for improving the adhesion is preferably performed on the entire surface of the substrate on the pressure-sensitive adhesive layer side.

From the viewpoint of ensuring the strength with which the base material functions as a dicing tape and a support for dicing die-bonding film, the thickness of the base material is preferably 40 μm or more, more preferably 50 μm or more, still more preferably 55 μm or more, and particularly preferably 60 μm or more. From the viewpoint of achieving appropriate flexibility of the dicing tape and the dicing die-bonding film, the thickness of the base material is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 μm or less.

(adhesive layer)

The adhesive layer in the dicing die-bonding film has a hardness of 0.04 to 0.8MPa, preferably 0.05 to 0.8MPa, and more preferably 0.05 to 0.7MPa on the basis of the nanoindentation method at a temperature of 23 ℃ and a frequency of 100 Hz. By setting the hardness by the nanoindentation method to 0.04MPa or more, the surface of the pressure-sensitive adhesive layer is soft, the adhesion between the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer can be made appropriate, and the occurrence of peeling (floating) between the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer during the spreading step and thereafter can be suppressed. Further, by setting the hardness by the nanoindentation method to 0.8MPa or less, it is possible to suppress the adhesive layer from becoming excessively strong, and in the pick-up step described later, the semiconductor chip with the adhesive layer after being cut can be favorably peeled from the adhesive layer, and favorable pick-up can be achieved. The hardness of the pressure-sensitive adhesive layer before radiation curing by the nanoindentation method is within the above range. In the present specification, "before radiation curing" refers to a state in which the pressure-sensitive adhesive layer is not cured by irradiation with radiation, and includes a case where the pressure-sensitive adhesive layer is not a radiation-curable pressure-sensitive adhesive layer described later.

The hardness by the nanoindentation method is determined as follows: the load and the press-in depth of the indenter when the indenter is pressed into the surface of the adhesive layer are continuously measured over the time of applying a load and the time of removing the load, and the load-press-in depth curve is obtained. Therefore, the hardness by the nanoindentation method is an index representing the physical properties of the surface of the adhesive layer. The nanoindentation-based hardness of the adhesive layer is determined by: 1mN, add load/unload speed: 0.1mN/s, retention time: hardness obtained by nanoindentation test under the condition of 1 s.

The adhesive layer of the dicing tape preferably contains an acrylic polymer as a base polymer. The acrylic polymer is a polymer containing, as a structural unit of the polymer, a structural unit derived from an acrylic monomer (a monomer component having a (meth) acryloyl group in a molecule). The acrylic polymer is preferably a polymer having the largest content of structural units derived from (meth) acrylate in terms of mass ratio. The acrylic polymer may be used alone, or two or more thereof may be used. In the present specification, "(meth) acrylic acid" means "acrylic acid" and/or "methacrylic acid" ("either or both of acrylic acid" and "methacrylic acid"), and the like.

Examples of the (meth) acrylate include a hydrocarbon group-containing (meth) acrylate optionally having an alkoxy group. Examples of the hydrocarbon group-containing (meth) acrylate include alkyl (meth) acrylates, cycloalkyl (meth) acrylates, and aryl (meth) acrylates. Examples of the alkyl (meth) acrylate include: methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl (lauryl), tridecyl, tetradecyl, hexadecyl, octadecyl, eicosyl (meth) acrylates and the like.

Examples of the cycloalkyl (meth) acrylate include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the aryl (meth) acrylate include phenyl esters and benzyl esters of (meth) acrylic acid. Examples of the hydrocarbyl (meth) acrylate having an alkoxy group include those obtained by replacing 1 or more hydrogen atoms in the hydrocarbyl group of the hydrocarbyl (meth) acrylate with an alkoxy group, and examples thereof include 2-methoxymethyl ester, 2-methoxyethyl ester, and 2-methoxybutyl ester of (meth) acrylic acid. The hydrocarbon-containing (meth) acrylate optionally having an alkoxy group may be used alone or in combination of two or more.

The (meth) acrylate having a hydrocarbon group optionally having an alkoxy group preferably has 6 to 10 total carbon atoms in the ester moiety (total number of carbon atoms including the alkoxy group when the alkoxy group is present). Particularly preferred is a hydrocarbon group-containing (meth) acrylate in which the total number of carbon atoms in the hydrocarbon group is 6 to 10. In these cases, the spreading step and the subsequent suppression of floating between the adhesive layer and the pressure-sensitive adhesive layer and the pickup step can be more easily achieved at the same time as the good pickup property in the pickup step.

In order to appropriately exhibit basic characteristics such as adhesiveness by the hydrocarbon group-containing (meth) acrylate optionally having an alkoxy group in the pressure-sensitive adhesive layer 12, the proportion of the hydrocarbon group-containing (meth) acrylate optionally having an alkoxy group in the entire monomer components for forming the acrylic polymer is preferably 20 mol% or more, and more preferably 30 mol% or more. More preferably 40 mol% or more.

In the present specification, the monomer component does not contain a compound having a radiation-polymerizable group (for example, a crosslinking agent having a radical-polymerizable functional group and a 1 st functional group) at a stage of incorporation into a polymer before irradiation of the pressure-sensitive adhesive layer with radiation.

The acrylic polymer is preferably a polymer containing a structural unit derived from a nitrogen atom-containing monomer as a structural unit of the polymer (sometimes referred to as "1 st acrylic polymer"). In this case, the nano-indentation method can easily set the hardness within the above range and the peel force within the above range, and the occurrence of peeling (floating) between the adhesive layer and the adhesive layer can be suppressed in the expanding step and thereafter, and the semiconductor chip with the adhesive layer after being cut in the pick-up step described later can be favorably peeled from the adhesive layer, and favorable pick-up can be easily achieved.

Examples of the nitrogen atom-containing monomer include: a morpholino group-containing monomer such as (meth) acryloylmorpholine, a cyano group-containing monomer such as (meth) acrylonitrile, and an amide group-containing monomer such as (meth) acrylamide. The nitrogen atom-containing monomer particularly preferably contains a morpholine-containing monomer (particularly (meth) acryloyl morpholine). The nitrogen atom-containing monomer may be used alone or in combination of two or more.

From the viewpoint of making it easier to set the hardness by the nanoindentation method within the above range and the peel force within the above range, the proportion of the structural unit derived from the nitrogen atom-containing monomer in all the monomer components for forming the 1 st acrylic polymer in all the monomer components for forming the acrylic polymer is preferably 1 mol% or more, and more preferably 2 mol% or more. The above ratio is preferably 30 mol% or less, and more preferably 20 mol% or less.

The acrylic polymer may contain, for the purpose of modification of cohesive force, heat resistance, and the like, a structural unit derived from another monomer component copolymerizable with the above hydrocarbon group-containing (meth) acrylate optionally having an alkoxy group, in addition to the above nitrogen atom-containing monomer. Examples of the other monomer components include: and functional group-containing monomers such as carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, and phosphoric acid group-containing monomers.

Examples of the carboxyl group-containing monomer include: acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid, and the like.

Examples of the acid anhydride monomer include: maleic anhydride, itaconic anhydride, and the like. Examples of the hydroxyl group-containing monomer include: 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate.

Examples of the glycidyl group-containing monomer include: glycidyl (meth) acrylate, methyl glycidyl (meth) acrylate, and the like.

Examples of the sulfonic acid group-containing monomer include: styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid, and the like.

Examples of the phosphoric acid group-containing monomer include: 2-hydroxyethyl acryloyl phosphate, and the like.

The other monomer component is particularly preferably a hydroxyl group-containing monomer, and more preferably 2-hydroxyethyl (meth) acrylate (2-hydroxyethyl (meth) acrylate). That is, the acrylic polymer preferably contains a structural unit derived from 2-hydroxyethyl (meth) acrylate. The other monomer component may be used alone or in combination of two or more. In order to appropriately exhibit basic characteristics such as adhesiveness by the hydrocarbon group-containing (meth) acrylate optionally having an alkoxy group in the pressure-sensitive adhesive layer 12, the total ratio of the nitrogen atom-containing monomer and the other monomer components in the total monomer components for forming the acrylic polymer is preferably 60 mol% or less, and more preferably 40 mol% or less.

In order to appropriately exhibit basic characteristics such as adhesiveness by the hydrocarbon group-containing (meth) acrylate optionally having an alkoxy group in the pressure-sensitive adhesive layer, the proportion of the structural unit derived from the hydroxyl group-containing monomer in the entire monomer components for forming the acrylic polymer is preferably 5 mol% or more, and more preferably 10 mol% or more. The above ratio is, for example, 80 mol% or less, and may be 70 mol% or less and 60 mol% or less.

The 1 st acrylic polymer preferably has a structural unit derived from a hydroxyl group-containing monomer and a structural part derived from a compound having an isocyanate group and a radical polymerizable functional group. Examples of the radical polymerizable functional group include a carbon-carbon double bond having radiation polymerizability, and examples thereof include: vinyl group, propenyl group, isopropenyl group, (meth) acryloyl group (acryloyl group, methacryloyl group), and the like. Among them, (meth) acryloyl groups are preferable.

When the 1 st acrylic polymer has a structural unit derived from a hydroxyl group-containing monomer and a structural unit derived from a compound having an isocyanate group and a radically polymerizable functional group, the molar ratio of the structural unit derived from the compound having an isocyanate group and a radically polymerizable functional group in the 1 st acrylic polymer to the structural unit derived from a hydroxyl group-containing monomer is preferably 0.7 or more, and more preferably 0.75 or more. The molar ratio is preferably 0.9 or less, and more preferably 0.85 or less. When the molar ratio is within the above range, the nanoindentation-based hardness can be more easily set within the above range, and the peeling force can be more easily set within the above range.

Examples of the compound having an isocyanate group and a radical polymerizable functional group include methacryloyl isocyanate, 2-acryloxyethyl isocyanate, 2-methacryloxyethyl isocyanate, m-isopropenyl- α -dimethylbenzyl isocyanate, and the like, and among them, 2-acryloxyethyl isocyanate and 2-methacryloxyethyl isocyanate are preferable.

The acrylic polymer containing the 1 st acrylic polymer may contain a structural unit derived from a polyfunctional monomer copolymerizable with the monomer components forming the acrylic polymer, in order to form a crosslinked structure in the polymer skeleton thereof. Examples of the polyfunctional monomer include: examples of the monomer include monomers having a (meth) acryloyl group and another reactive functional group in the molecule, such as hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (for example, polyglycidyl (meth) acrylate), polyester (meth) acrylate, and urethane (meth) acrylate. The polyfunctional monomer may be used alone or in combination of two or more. In order to appropriately exhibit basic characteristics such as adhesiveness by the hydrocarbon group-containing (meth) acrylate optionally having an alkoxy group in the pressure-sensitive adhesive layer 12, the ratio of the polyfunctional monomer in the total monomer components for forming the acrylic polymer is preferably 40 mol% or less, and more preferably 30 mol% or less.

The acrylic polymer is obtained by polymerizing one or more monomer components including an acrylic monomer. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

The mass average molecular weight of the acrylic polymer is preferably 30 ten thousand or more, and more preferably 35 to 100 ten thousand. When the mass average molecular weight is 30 ten thousand or more, the amount of low molecular weight substances in the pressure-sensitive adhesive layer tends to be small, and contamination of the pressure-sensitive adhesive layer, the semiconductor wafer, and the like can be further suppressed.

The adhesive layer or the adhesive for forming the adhesive layer may also contain a crosslinking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be crosslinked, and low-molecular-weight substances in the pressure-sensitive adhesive layer can be further reduced. Further, the mass average molecular weight of the acrylic polymer can be increased. Examples of the crosslinking agent include: polyisocyanate compounds, epoxy compounds, polyol compounds (such as polyphenol compounds), aziridine compounds, melamine compounds, and the like. When the crosslinking agent is used, the amount thereof is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the base polymer.

The pressure-sensitive adhesive layer may be a pressure-sensitive adhesive layer in which the adhesive force can be intentionally reduced by an external action during the use of the dicing die-bonding film (adhesive force-reducible pressure-sensitive adhesive layer), or a pressure-sensitive adhesive layer in which the adhesive force is hardly or not reduced at all by an external action during the use of the dicing die-bonding film (adhesive force-nondecreasing pressure-sensitive adhesive layer), and may be appropriately selected depending on the method, conditions, and the like for singulating the semiconductor wafer into pieces using the dicing die-bonding film.

In the case where the adhesive layer is a pressure-sensitive adhesive layer of a type having a reduced adhesive force, the pressure-sensitive adhesive layer can be used in a state in which the pressure-sensitive adhesive layer exhibits a relatively high adhesive force and a state in which the pressure-sensitive adhesive layer exhibits a relatively low adhesive force in the manufacturing process or the use process of the dicing die-bonding film. For example, in the case where the dicing die-bonding film is used in the dicing step while the adhesive layer is bonded to the adhesive layer of the dicing tape in the manufacturing process of the dicing die-bonding film, the adhesive layer exhibits a relatively high adhesive force, and the lifting of the adherend such as the adhesive layer from the adhesive layer can be suppressed/prevented, while in the case where the semiconductor chip with the adhesive layer is picked up from the dicing tape of the dicing die-bonding film thereafter, the adhesive force of the adhesive layer is reduced, and the semiconductor chip can be easily picked up.

Examples of the pressure-sensitive adhesive for forming such a pressure-sensitive adhesive layer having a reduced adhesive strength include a radiation-curable pressure-sensitive adhesive and a heat-expandable pressure-sensitive adhesive. As the adhesive for forming the adhesive layer having a reduced adhesive strength, one adhesive may be used, or two or more adhesives may be used.

As the radiation-curable pressure-sensitive adhesive, for example, a type of pressure-sensitive adhesive that is cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, gamma rays, or X rays can be used, and a type of pressure-sensitive adhesive that is cured by irradiation with ultraviolet rays (ultraviolet-curable pressure-sensitive adhesive) is particularly preferably used.

Examples of the radiation curable adhesive include: an additive type radiation-curable pressure-sensitive adhesive containing a base polymer such as the above-mentioned acrylic polymer and a radiation-polymerizable monomer component and oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond.

Examples of the radiation-polymerizable monomer component include: urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1, 4-butanediol di (meth) acrylate, and the like. Examples of the radiation-polymerizable oligomer component include: various oligomers such as urethane type, polyether type, polyester type, polycarbonate type, polybutadiene type, etc., preferably an oligomer component having a molecular weight of about 100 to 30000. The content of the radiation-curable monomer component and oligomer component in the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer is, for example, about 5 to 500 parts by mass, preferably about 40 to 150 parts by mass, based on 100 parts by mass of the base polymer. Further, as the additive-type radiation-curable pressure-sensitive adhesive, for example, one disclosed in Japanese patent application laid-open No. 60-196956 can be used.

Examples of the radiation curable adhesive include: an internal radiation-curable pressure-sensitive adhesive containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at a polymer side chain, a polymer main chain, or a polymer main chain end. When such an internal radiation curable adhesive is used, the following tendency is exhibited: it is possible to suppress an undesirable change in adhesive properties with time due to the movement of low-molecular-weight components in the formed adhesive layer.

As the base polymer contained in the internal radiation curable pressure-sensitive adhesive, an acrylic polymer (particularly, the 1 st acrylic polymer) is preferable. Examples of the method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer include the following methods: after a raw material monomer containing a monomer component having a 1 st functional group is polymerized (copolymerized) to obtain an acrylic polymer, a compound having a 2 nd functional group capable of reacting with the 1 st functional group and a radiation-polymerizable carbon-carbon double bond is subjected to a condensation reaction or an addition reaction with the acrylic polymer while maintaining the radiation-polymerizability of the carbon-carbon double bond.

Examples of the combination of the 1 st functional group and the 2 nd functional group include: carboxyl and epoxy, epoxy and carboxyl, carboxyl and aziridine, aziridine and carboxyl, hydroxyl and isocyanate, isocyanate and hydroxyl, and the like. Among these, from the viewpoint of following the easiness of the reaction, a combination of a hydroxyl group and an isocyanate group, and a combination of an isocyanate group and a hydroxyl group are preferable. Among them, from the viewpoint of the technical difficulty in producing a polymer having an isocyanate group with high reactivity and the easiness in producing and obtaining an acrylic polymer having a hydroxyl group, a combination of the 1 st functional group being a hydroxyl group and the 2 nd functional group being an isocyanate group is preferable. Examples of the compound having an isocyanate group and a radiation-polymerizable carbon-carbon double bond include the compounds having an isocyanate group and a radical-polymerizable functional group. Examples of the acrylic polymer having a hydroxyl group include those containing the above-mentioned hydroxyl group-containing monomer and a structural unit derived from an ether compound such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether and diethylene glycol monovinyl ether.

The radiation-curable pressure-sensitive adhesive preferably contains a photopolymerization initiator, examples of the photopolymerization initiator include α -ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, haloketones, acylphosphine oxides, acylphosphonates, and the like, examples of the α -ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α -hydroxy- α' -dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexylphenylketone, and the like, examples of the acetophenone compounds include methoxyacetophenone, 2-dimethoxy-2-phenylacetophenone, 2-diethoxy acetophenone, 2-methyl-1- [4- (methylthio) -phenyl ] -2-morpholinopropane-1, and the like, examples of the benzoin ether compounds include benzoin ether compounds, such as benzoin ether compounds, such as isopropyl-2-dichloroacetone, and the like, examples of the photopolymerization initiator include 0 part by mass of the benzoin ether compounds, the photopolymerization initiator, the benzoin ether compounds such as 2-isopropyl-2-methoxy-propyl-2-methoxy-2-isopropyl-2-methoxy-2-isopropyl-methoxy-phenyl ketone, and the like, the photopolymerization initiator, the isopropyl-2-isopropyl-2-isopropyl ketone compounds, and the like, the isopropyl-2-isopropyl-2-isopropyl.

The heat-expandable adhesive is an adhesive containing a component (a foaming agent, heat-expandable microspheres, or the like) which expands and expands by heating. Examples of the blowing agent include various inorganic blowing agents and organic blowing agents. Examples of the inorganic foaming agent include: ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium borohydride, azides, and the like. Examples of the organic foaming agent include: chlorofluoroalkanes such as trichlorofluoromethane and dichlorofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide, and barium azodicarboxylate; hydrazine compounds such as p-toluenesulfonyl hydrazide, diphenylsulfone-3, 3 '-disulfonyl hydrazide, 4' -oxybis-benzenesulfonyl hydrazide and allyldisulfonyl hydrazide; semicarbazide compounds such as p-toluenesulfonyl semicarbazide and 4, 4' -oxybis (benzenesulfonyl semicarbazide); triazole compounds such as 5-morpholinyl-1, 2,3, 4-thiatriazole; and N-nitroso compounds such as N, N ' -dinitrosopentamethylenetetramine and N, N ' -dimethyl-N, N ' -dinitrosoterephthalamide. Examples of the thermally expandable microspheres include microspheres in which a substance that is easily vaporized and expanded by heating is contained in a shell. Examples of the substance that is easily vaporized and expanded by heating include: isobutane, propane, pentane, etc. By encapsulating a substance that is easily vaporized and expanded by heating into a shell-forming substance by an agglomeration method, an interfacial polymerization method, or the like, a thermally expandable microsphere can be produced. As the shell-forming substance, a substance exhibiting thermal fusion properties or a substance which can be broken by the thermal expansion effect of the encapsulated substance can be used. Examples of such substances include: vinylidene chloride-acrylonitrile copolymers, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone, and the like.

Examples of the non-reduced adhesive force type pressure-sensitive adhesive layer include a pressure-sensitive adhesive layer. The pressure-sensitive adhesive layer includes an adhesive layer having the following configuration: the pressure-sensitive adhesive layer formed of the radiation-curable pressure-sensitive adhesive described in the pressure-sensitive adhesive layer having a reduced adhesive strength is cured by irradiation with radiation in advance, and still has a certain adhesive strength. As the adhesive for forming the non-adhesive-force-reducing adhesive layer, one kind of adhesive may be used, or two or more kinds of adhesives may be used. The entire pressure-sensitive adhesive layer may be a non-adhesive-force-reducing pressure-sensitive adhesive layer, or a part of the pressure-sensitive adhesive layer may be a non-adhesive-force-reducing pressure-sensitive adhesive layer. For example, when the pressure-sensitive adhesive layer has a single-layer structure, the pressure-sensitive adhesive layer may be a non-adhesive-force-reducing pressure-sensitive adhesive layer as a whole, or a pressure-sensitive adhesive layer may be a non-adhesive-force-reducing pressure-sensitive adhesive layer at a predetermined portion (for example, an area located outside a central area as an area to be bonded of the ring frame) and a pressure-sensitive adhesive-force-reducing pressure-sensitive adhesive layer at another portion (for example, a central area as an area to be bonded of the semiconductor wafer). In the case where the pressure-sensitive adhesive layer has a laminated structure, all the pressure-sensitive adhesive layers in the laminated structure may be pressure-sensitive adhesive layers of non-reduced adhesive strength, or some of the pressure-sensitive adhesive layers in the laminated structure may be pressure-sensitive adhesive layers of non-reduced adhesive strength.

The pressure-sensitive adhesive layer (radiation-curable pressure-sensitive adhesive layer irradiated with radiation) in the form in which the pressure-sensitive adhesive layer formed of the radiation-curable pressure-sensitive adhesive (radiation-curable pressure-sensitive adhesive layer not irradiated with radiation) is cured by irradiation with radiation in advance exhibits tackiness due to the contained polymer component although the adhesive force is reduced by irradiation with radiation, and can exhibit the minimum adhesive force required for the pressure-sensitive adhesive layer of the dicing tape in the dicing step or the like. In the case of using a radiation-curable pressure-sensitive adhesive layer irradiated with radiation, the entire pressure-sensitive adhesive layer may be a radiation-curable pressure-sensitive adhesive layer irradiated with radiation, or a radiation-curable pressure-sensitive adhesive layer in which a part of the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer irradiated with radiation and the other part is a radiation-curable pressure-sensitive adhesive layer not irradiated with radiation in the plane extending direction of the pressure-sensitive adhesive layer. In the present specification, the "radiation-curable pressure-sensitive adhesive layer" refers to a pressure-sensitive adhesive layer formed from a radiation-curable pressure-sensitive adhesive, and includes both a radiation-curable pressure-sensitive adhesive layer that is not irradiated with radiation and has radiation curability and a radiation-curable pressure-sensitive adhesive layer that is cured by irradiation of radiation and that is cured by irradiation of radiation.

As the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer, a known or conventional pressure-sensitive adhesive can be used, and an acrylic adhesive or a rubber adhesive containing an acrylic polymer as a base polymer can be preferably used. When the pressure-sensitive adhesive layer contains an acrylic polymer as the pressure-sensitive adhesive, the acrylic polymer preferably contains a structural unit derived from a (meth) acrylate ester as the most structural unit in mass proportion. As the acrylic polymer, for example, the acrylic polymer described as the acrylic polymer that can be contained in the pressure-sensitive adhesive layer can be used.

The pressure-sensitive adhesive layer or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer may contain, in addition to the above components, known or conventional additives for pressure-sensitive adhesive layers, such as a crosslinking accelerator, a tackifier, an antioxidant, and a colorant (such as a pigment and a dye). Examples of the colorant include compounds colored by irradiation with radiation. When a compound that is colored by irradiation with radiation is contained, only the portion irradiated with radiation can be colored. The compound colored by irradiation with radiation is colorless or pale before irradiation with radiation, and becomes colored by irradiation with radiation, and examples thereof include leuco dyes and the like. The amount of the compound to be colored by irradiation with radiation is not particularly limited and can be selected as appropriate.

The thickness of the pressure-sensitive adhesive layer is not particularly limited, and when the pressure-sensitive adhesive layer is a pressure-sensitive adhesive layer formed of a radiation-curable pressure-sensitive adhesive, from the viewpoint of obtaining a balance between the adhesive strength of the pressure-sensitive adhesive layer to the pressure-sensitive adhesive layer before and after radiation curing, the thickness is preferably about 1 to 50 μm, more preferably 2 to 40 μm, and still more preferably 5 to 30 μm.

(adhesive layer)

The adhesive layer has a function of exhibiting a thermosetting adhesive for die bonding, and further has a function of holding an adhesive between a work such as a semiconductor wafer and a frame member such as a ring frame as necessary. The adhesive layer can be cut by applying a tensile stress, and the adhesive layer can be used by cutting the adhesive layer by applying a tensile stress.

The adhesive layer and the adhesive constituting the adhesive layer may contain a thermosetting resin and, for example, a thermoplastic resin as an adhesive component, or may contain a thermoplastic resin having a thermosetting functional group capable of reacting with a curing agent to bond. When the adhesive constituting the adhesive layer contains a thermoplastic resin having a thermosetting functional group, the adhesive does not necessarily contain a thermosetting resin (epoxy resin or the like). The adhesive layer may have either a single-layer structure or a multi-layer structure.

Examples of the thermoplastic resin include: natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, an ethylene-vinyl acetate copolymer, an ethylene-acrylic acid ester copolymer, a polybutadiene resin, a polycarbonate resin, a thermoplastic polyimide resin, a polyamide resin such as 6-nylon and 6, 6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET and PBT, a polyamideimide resin, a fluororesin, and the like. The thermoplastic resin may be used alone or in combination of two or more. The thermoplastic resin is preferably an acrylic resin because it has a low content of ionic impurities and high heat resistance, and thus the bonding reliability by the adhesive layer is easily ensured.

The above-mentioned acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth) acrylate optionally having an alkoxy group as the most structural unit in mass proportion. Examples of the hydrocarbon group-containing (meth) acrylate optionally having an alkoxy group include: examples of the hydrocarbon group-containing (meth) acrylate optionally having an alkoxy group for forming the acrylic polymer that can be contained in the pressure-sensitive adhesive layer are given below.

The acrylic resin may also contain a structural unit derived from another monomer component copolymerizable with the hydrocarbon group-containing (meth) acrylate optionally having an alkoxy group. Examples of the other monomer components include: a carboxyl group-containing monomer; an acid anhydride monomer; a hydroxyl group-containing monomer; a glycidyl group-containing monomer; a sulfonic acid group-containing monomer; a phosphoric acid group-containing monomer; functional group-containing monomers such as acrylamide and acrylonitrile; specifically, the monomer components exemplified as the other monomer components constituting the acrylic polymer that can be contained in the pressure-sensitive adhesive layer can be used.

When the adhesive layer contains a thermoplastic resin and a thermosetting resin, examples of the thermosetting resin include: epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, thermosetting polyimide resins, and the like. The thermosetting resin may be used alone or in combination of two or more. An epoxy resin is preferable as the thermosetting resin because of a tendency that the content of ionic impurities and the like which may cause corrosion of a semiconductor chip to be die bonded is small. As the curing agent for the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include: bisphenol a type, bisphenol F type, bisphenol S type, brominated bisphenol a type, hydrogenated bisphenol a type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trihydroxyphenyl methane type, tetrakis (phenylhydroxy) ethane (Tetraphenylolethane) type, hydantoin type, triglycidyl isocyanurate type, glycidyl amine type epoxy resins, and the like. Among them, a novolak type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type epoxy resin, and a tetrakis (phenylhydroxy) ethane (Tetraphenylolethane) type epoxy resin are preferable from the viewpoint of being highly reactive with a phenolic resin as a curing agent and excellent in heat resistance.

Examples of the phenolic resin which can function as a curing agent for an epoxy resin include: and a novolak phenol resin, a resol phenol resin, and a polyoxyethylene such as a poly-p-oxystyrene. Examples of the novolak phenol resin include: phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, nonylphenol novolac resins, and the like. The phenol resin may be used alone or in combination of two or more. Among them, phenol novolac resins and phenol aralkyl resins are preferable from the viewpoint of a tendency to improve the connection reliability of an epoxy resin used as an adhesive for die bonding when used as a curing agent for the adhesive.

In the adhesive layer, the phenolic resin is contained in an amount such that the hydroxyl group in the phenolic resin is preferably 0.5 to 2.0 equivalents, more preferably 0.7 to 1.5 equivalents, relative to 1 equivalent of the epoxy group in the epoxy resin component, from the viewpoint of sufficiently advancing the curing reaction of the epoxy resin and the phenolic resin.

When the adhesive layer contains a thermosetting resin, the content of the thermosetting resin is preferably 5 to 60% by mass, more preferably 10 to 50% by mass, based on the total mass of the adhesive layer, from the viewpoint of allowing the adhesive layer to exhibit a function as a thermosetting adhesive.

When the adhesive layer contains a thermoplastic resin having a thermosetting functional group, an acrylic resin having a thermosetting functional group can be used as the thermoplastic resin, for example. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth) acrylate optionally having an alkoxy group as the most structural unit in mass proportion. Examples of the hydrocarbon group-containing (meth) acrylate optionally having an alkoxy group include: examples of the hydrocarbon group-containing (meth) acrylate optionally having an alkoxy group which forms the acrylic polymer that can be contained in the pressure-sensitive adhesive layer are given.

On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include: glycidyl, carboxyl, hydroxyl, isocyanate, and the like. Among them, glycidyl group and carboxyl group are preferable. That is, as the acrylic resin having a thermosetting functional group, a glycidyl group-containing acrylic resin and a carboxyl group-containing acrylic resin are particularly preferable.

Further, it is preferable to contain a curing agent together with the thermosetting functional group-containing acrylic resin, and examples of the curing agent include: examples of the curing agent include crosslinking agents that can be contained in the radiation-curable pressure-sensitive adhesive for forming a pressure-sensitive adhesive layer. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenol compound is preferably used as the curing agent, and for example, the above-mentioned various phenol resins can be used.

In order to achieve a certain degree of crosslinking in the adhesive layer before curing for die bonding, for example, a polyfunctional compound capable of reacting with and bonding to a functional group at a molecular chain end of the resin which can be contained in the adhesive layer is preferably blended in advance as a crosslinking component in the resin composition for forming the adhesive layer. Such a configuration is preferable from the viewpoint of improving the adhesion properties of the adhesive layer at high temperatures and from the viewpoint of improving the heat resistance.

Examples of the crosslinking component include: a polyisocyanate compound. Examples of the polyisocyanate compound include: toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5-naphthalene diisocyanate, adducts of polyols and diisocyanates, and the like. Further, as the crosslinking component, other polyfunctional compounds such as epoxy resins and the like may be used in combination with the polyisocyanate compound.

The content of the crosslinking component in the resin composition for forming an adhesive layer is preferably 0.05 parts by mass or more in terms of increasing the cohesive force of the adhesive layer 20 to be formed and 7 parts by mass or less in terms of increasing the adhesive force of the adhesive layer 20 to be formed, relative to 100 parts by mass of the resin having the functional group capable of reacting with and bonding to the crosslinking component.

The adhesive layer preferably contains a filler. By mixing the filler into the adhesive layer, physical properties such as conductivity, thermal conductivity, and elastic modulus of the adhesive layer can be adjusted. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are particularly preferable.

Examples of the inorganic filler include: aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, amorphous silica; and simple metal substances and alloys such as aluminum, gold, silver, copper, nickel and the like; amorphous carbon black, graphite, and the like. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. The filler may be used alone or in combination of two or more.

The average particle diameter of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. When the average particle diameter is 0.005 μm or more, wettability and adhesiveness to an adherend such as a semiconductor wafer are further improved. When the average particle diameter is 10 μm or less, the effect of the filler added to impart the above-described characteristics can be sufficiently exhibited, and heat resistance can be ensured. The average particle diameter of the filler can be determined, for example, by using a photometric particle size distribution meter (for example, trade name "LA-910", manufactured by horiba, Ltd.).

The adhesive layer may contain other components as necessary. Examples of the other components include: curing catalysts, flame retardants, silane coupling agents, ion trapping agents, dyes, and the like. The other additives may be used alone or in combination of two or more.

Examples of the flame retardant include: antimony trioxide, antimony pentoxide, brominated epoxy resins, and the like.

Examples of the silane coupling agent include β - (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, γ -glycidoxypropyltrimethoxysilane, and γ -glycidoxypropylmethyldiethoxysilane.

Examples of the ion scavenger include: hydrotalcite compounds, bismuth hydroxide, antimony oxide hydrate (for example, "IXE-300" manufactured by east asian synthesis corporation), zirconium phosphate having a specific structure (for example, "IXE-100" manufactured by east asian synthesis corporation), magnesium silicate (for example, "Kyoward 600" manufactured by synechiae chemical industry co., ltd.), aluminum silicate (for example, "Kyoward 700" manufactured by synechiae chemical industry co., ltd.), and the like.

As the ion scavenger, a compound capable of forming a complex with a metal ion may also be used. Examples of such compounds include: triazole compounds, tetrazole compounds, and bipyridine compounds. Among these, from the viewpoint of stability of a complex formed with a metal ion, a triazole-based compound is preferable.

Examples of the above-mentioned triazole-based compound include 1,2, 3-benzotriazole, 1- { N, N-bis (2-ethylhexyl) aminomethyl } benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-3, 5-di-tert-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-tert-butyl-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3, 5-di-tert-pentylphenyl) benzotriazole, 2- (2-hydroxy-5-tert-octylphenyl) benzotriazole, 6- (2-benzotriazolyl) -4-tert-octyl-6 '-tert-butyl-4' -methyl-2, 2 '-methylenebisphenol, 1- (2', 3 '-hydroxypropyl) benzotriazole, 1- (1, 2-dicarboxyldiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2, 4-di-tert-amyl-6- (H-benzotriazole-1-yl) methyl } benzotriazole, 2- (2-hydroxy-5-butylphenyl) -2- [ 2-chloro-3, 5-tert-butylphenyl ] -5-butylphenyl ] -2- (2-butyl-5-methyl-2, 5-tert-tolyltriazole, 2-butyl-4-methyl-2, 2-methyl-2, 5-2-tert-butyl-4' -methyl-2, 2-4-methyl-phenyl-2, 5-2-phenyl-benzotriazole, 5-tert-butyl-2-ethyl-benzotriazole, 5-2-phenyl-2-ethyl-phenyl-2-phenyl-benzotriazole, 5-2-tert-2-butyl-2-methyl-2, 5-butyl-2-ethyl-phenyl-2, 5-ethyl-phenyl-2-ethyl-phenyl-benzotriazole, 5-2, 5-tert-butyl-2-ethyl-2-benzotriazole, 5-2-tert-butyl-2-butyl-ethyl-2, 5-butyl-2-butyl-ethyl-2-butyl-phenyl-2-ethyl-2, 5-ethyl-phenyl-benzotriazole, 5-ethyl-2-ethyl-phenyl-2-benzotriazole, 5-2-ethyl-2-ethyl-phenyl-ethyl-benzotriazole, 5-2-ethyl-2-ethyl-2-phenyl-ethyl-2-phenyl-2-ethyl-2-benzotriazole, 5-2.

Further, a predetermined hydroxyl group-containing compound such as a hydroquinone compound, a hydroxyanthraquinone compound, a polyphenol compound, or the like may be used as the ion scavenger. Specific examples of such a hydroxyl group-containing compound include: 1, 2-benzenediol, alizarin, 1, 5-dihydroxy anthraquinone, tannic acid, gallic acid, methyl gallate, pyrogallol and the like.

The thickness of the adhesive layer (total thickness in the case of a laminate) is not particularly limited, and is, for example, 1 to 200 μm. The upper limit is preferably 100. mu.m, more preferably 80 μm. The lower limit is preferably 3 μm, more preferably 5 μm.

In the dicing die-bonding film, as described above, the peel force between the pressure-sensitive adhesive layer and the adhesive layer in the T-peel test under the conditions of the temperature of 23 ℃ and the peel speed of 300 mm/min is 0.3N/20mm or more, preferably 0.5N/20mm or more, and more preferably 0.7N/20mm or more. When the peel force is 0.3N/20mm or more, the adhesiveness between the pressure-sensitive adhesive layer and the adhesive layer can be made appropriate, and the occurrence of peeling (floating) between the pressure-sensitive adhesive layer and the adhesive layer in the spreading step and thereafter can be suppressed. The higher the peeling force, the more preferable the upper limit thereof is, for example, 10N/20mm, 5.0N/20mm or 3.0N/20 mm. The above-mentioned peeling force of the pressure-sensitive adhesive layer before radiation curing is the above-mentioned value.

The T-peel test was carried out using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu corporation). The sample pieces to be subjected to the test can be prepared as follows. A backing tape (trade name "BT-315", manufactured by Nindon electric Co., Ltd.) was attached to the adhesive layer side of the dicing die-bonding film, and then a test piece having a width of 50mm × a length of 120mm was cut out.

The dicing die-bonding film may have an isolation film. Specifically, the dicing die-bonding film may be in a sheet form having a separator for each dicing die-bonding film, or may be in a form in which the separator is in a long form, a plurality of dicing die-bonding films are arranged thereon, and the separator is wound into a roll. The separator is an element for protecting the surface of the adhesive layer of the dicing die-bonding film, and is peeled from the dicing die-bonding film when the film is used. Examples of the separator include: polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, plastic film surface-coated with a release agent such as a fluorine-based release agent or an acrylic long-chain alkyl ester-based release agent, paper, and the like. The thickness of the isolation film is, for example, 5 to 200 μm.

The dicing die-bonding film 1 as one embodiment of the dicing die-bonding film of the present invention can be manufactured, for example, as follows.

First, the substrate 11 can be formed by a known or conventional film forming method. Examples of the film forming method include: a calendering film-forming method, a casting method in an organic solvent, a inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, and the like.

Then, a composition for forming an adhesive layer (adhesive composition) containing an adhesive, a solvent, and the like for forming the adhesive layer 12 is applied on the substrate 11 to form a coating film, and then the coating film is cured by desolvation, curing, and the like as necessary, whereby the adhesive layer 12 can be formed. Examples of the coating method include known or conventional coating methods such as roll coating, screen coating, and gravure coating. The solvent removal is carried out, for example, at a temperature of 80 to 150 ℃ for 0.5 to 5 minutes.

Alternatively, the pressure-sensitive adhesive layer 12 may be formed by applying the pressure-sensitive adhesive composition to a separator to form a coating film, and then curing the coating film under the above-described desolvation conditions. Then, the adhesive layer 12 is bonded to the substrate 11 together with the separator. In the above manner, the dicing tape 10 can be produced.

First, a composition (adhesive composition) for forming adhesive layer 20, which includes a resin, a filler, a curing catalyst, a solvent, and the like, is prepared for adhesive layer 20. Then, the adhesive composition is applied to the separator to form a coating film, and then the coating film is cured by desolvation, curing, or the like as necessary to form the adhesive layer 20. The coating method is not particularly limited, and examples thereof include known or conventional coating methods such as roll coating, screen coating, and gravure coating. The solvent removal is carried out, for example, at a temperature of 70 to 160 ℃ for 1 to 5 minutes.

Next, the release film is peeled off from each of the dicing tape 10 and the adhesive layer 20, and the adhesive layer 20 and the pressure-sensitive adhesive layer 12 are bonded so as to form a bonding surface. The bonding may be performed by, for example, crimping. In this case, the laminating temperature is not particularly limited, and is, for example, preferably 30 to 50 ℃ and more preferably 35 to 45 ℃. The linear pressure is not particularly limited, but is, for example, preferably 0.1 to 20kgf/cm, more preferably 1 to 10 kgf/cm.

As described above, in the case where the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer, when the pressure-sensitive adhesive layer 12 is irradiated with radiation such as ultraviolet rays after the adhesive layer 20 is bonded, the pressure-sensitive adhesive layer 12 is irradiated with radiation from the base material 11 side, for example, at an irradiation dose of 50 to 500mJ, preferably 100 to 300 mJ. The region (irradiation region R) of the dicing die-bonding film 1 to be irradiated as a measure for reducing the adhesive strength of the adhesive layer 12 is usually a region other than the edge portion of the bonding region of the adhesive layer 20 in the adhesive layer 12. When the irradiation region R is to be locally provided, the irradiation region R may be provided through a photomask on which a pattern corresponding to a region other than the irradiation region R is formed. Further, a method of forming the irradiation region R by spot irradiation with radiation may be mentioned.

In the above manner, for example, the dicing die-bonding film 1 shown in fig. 1 can be produced.

[ method for manufacturing semiconductor device ]

The dicing die-bonding film of the present invention can be used to manufacture a semiconductor device. Specifically, the semiconductor device can be manufactured by a manufacturing method including the steps of: a step (which may be referred to as "step a") of attaching a semiconductor wafer divided body including a plurality of semiconductor chips or a semiconductor wafer capable of being singulated into a plurality of semiconductor chips to the adhesive layer side in the dicing die-bonding film of the present invention; a step of spreading the dicing tape in the dicing die-bonding film of the invention under a relatively low temperature condition to cleave at least the adhesive layer to obtain a semiconductor chip with an adhesive layer (sometimes referred to as "step B"); a step (sometimes referred to as "step C") of spreading the dicing tape under a relatively high temperature condition to widen the interval between the semiconductor chips with the adhesive layer; and a step (sometimes referred to as "step D") of picking up the semiconductor chip with the adhesive layer.

The divided body of the semiconductor wafer including the plurality of semiconductor chips or the semiconductor wafer capable of being singulated into the plurality of semiconductor chips used in the step a can be obtained as follows. First, as shown in fig. 2a and 2 b, the dividing grooves 30a are formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor elements (not shown) are already mounted on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements are also already formed on the 1 st surface Wa.

Then, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the 2 nd surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T1, and the dividing groove 30a having a predetermined depth is formed on the 1 st surface Wa side of the semiconductor wafer W by using a rotary cutter such as a dicing device. The dividing grooves 30a are gaps for separating the semiconductor wafer W into semiconductor chip units (the dividing grooves 30a are schematically shown by thick lines in fig. 2 to 4).

Then, as shown in fig. 2 (c), the wafer processing tape T2 having the adhesive surface T2a is bonded to the 1 st surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is peeled from the semiconductor wafer W.

Then, as shown in fig. 2 d, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state where the semiconductor wafer W is held on the wafer processing tape T2 (wafer thinning step). The grinding process may be performed using a grinding apparatus having a grinding stone. Through this wafer thinning step, the semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips 31 can be formed in the present embodiment.

Specifically, the semiconductor wafer 30A has a portion (connection portion) for connecting portions to be singulated into the plurality of semiconductor chips 31 on the 2 nd surface Wb side. The thickness of the connecting portion of the semiconductor wafer 30A, i.e., the distance between the 2 nd surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30A on the 2 nd surface Wb side is, for example, 1 to 30 μm, preferably 3 to 20 μm.

(Process A)

In step a, a semiconductor wafer divided body including a plurality of semiconductor chips or a semiconductor wafer capable of being singulated into a plurality of semiconductor chips is attached to the dicing die-bonding film 1 on the adhesive layer 20 side.

In one embodiment of step a, as shown in fig. 3 (a), the semiconductor wafer 30A held by the wafer processing tape T2 is bonded to the adhesive layer 20 of the dicing die-bonding film 1. Then, as shown in fig. 3 (b), the wafer processing tape T2 is peeled from the semiconductor wafer 30A.

When the pressure-sensitive adhesive layer 12 in the dicing die-bonding film 1 is a radiation-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the base material 11 side after the semiconductor wafer 30A is bonded to the adhesive layer 20, instead of the radiation irradiation described above in the production process of the dicing die-bonding film 1. The irradiation amount is, for example, 50 to 500mJ/cm²Preferably 100 to 300mJ/cm². The region of the dicing die-bonding film 1 to be irradiated as a measure for reducing the adhesive strength of the adhesive layer 12 (irradiation region R shown in fig. 1) is, for example, a region other than the edge portion of the bonding region of the adhesive layer 20 in the adhesive layer 12.

(Process B)

In step B, the dicing tape 10 in the dicing die-bonding film 1 is spread at a relatively low temperature to cut at least the adhesive layer 20, thereby obtaining a semiconductor chip with an adhesive layer.

In one embodiment of the step B, the ring frame 41 is first attached to the adhesive layer 12 of the dicing tape 10 in the dicing die-bonding film 1, and then the dicing die-bonding film 1 with the semiconductor wafer 30A is fixed to the holding tool 42 of the expanding apparatus as shown in fig. 4 (a).

Then, as shown in fig. 4 (b), the first expanding step (cold expanding step) under relatively low temperature conditions is performed to singulate the semiconductor wafer 30A into a plurality of semiconductor chips 31 and to cut the adhesive layer 20 of the dicing die bonding film 1 into small adhesive layers 21, thereby obtaining the semiconductor chips 31 with adhesive layers.

In the cold spreading step, the hollow cylindrical jacking member 43 provided in the spreading device is brought into contact with the dicing tape 10 on the lower side of the dicing die-bonding film 1 in the drawing and is raised, and the dicing tape 10 of the dicing die-bonding film 1 to which the semiconductor wafer 30A is bonded is spread so as to be stretched in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A.

The expansion is performed under conditions such that a tensile stress in the range of 15 to 32MPa, preferably 20 to 32MPa is generated in the dicing tape 10. The temperature condition in the cold expansion step is, for example, 0 ℃ or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The expansion rate (speed for raising the jack-up member 43) in the cold expansion step is preferably 0.1 to 100 mm/sec. In addition, the expansion amount in the cold expansion process is preferably 3 to 16 mm.

In the step B, when the semiconductor wafer 30A capable of being singulated into a plurality of semiconductor chips is used, a thin portion which is easily broken in the semiconductor wafer 30A is cut, and the semiconductor chip is singulated into the semiconductor chip 31. At the same time, in the step B, the adhesive layer 20 adhering to the adhesive layer 12 of the spread dicing tape 10 is suppressed from being deformed in each region where the semiconductor chips 31 adhere to each other, but such deformation suppression is not generated at a position along the vertical direction in the drawing where the dividing grooves between the semiconductor chips 31 are located, and the tensile stress generated in the dicing tape 10 acts in this state. As a result, the adhesive layer 20 is cut at a position along the vertical direction where the dividing grooves between the semiconductor chips 31 are located. After the cutting by the expansion, as shown in fig. 4 (c), the jack member 43 is lowered to release the expanded state of the dicing tape 10.

(Process C)

In step C, the dicing tape 10 is spread under a relatively high temperature condition to widen the interval between the semiconductor chips with the adhesive layer.

In one embodiment of step C, first, as shown in fig. 5 (a), the 2 nd expanding step (room temperature expanding step) under relatively high temperature conditions is performed to widen the distance (spacing distance) between the semiconductor chips 31 with the adhesive layer.

In step C, the hollow cylindrical jacking member 43 provided in the expanding device is raised again to expand the dicing tape 10 for dicing the die bond film 1. The temperature in the second expansion step 2 is, for example, 10 ℃ or higher, preferably 15 to 30 ℃. The expanding speed (speed for raising the jack-up member 43) in the 2 nd expanding step is, for example, 0.1 to 10 mm/sec, preferably 0.3 to 1 mm/sec. The expansion amount in the 2 nd expansion step is, for example, 3 to 16 mm. In step C, the distance between the semiconductor chips 31 with the adhesive layer is increased to such an extent that the semiconductor chips 31 with the adhesive layer can be picked up from the dicing tape 10 in a pickup step described later. After the distance is widened by the expansion, the jack member 43 is lowered as shown in fig. 5 (b), and the expanded state of the dicing tape 10 is released.

From the viewpoint of suppressing the narrowing of the distance between the semiconductor chips 31 with the adhesive layer on the dicing tape 10 after the expanded state is released, it is preferable to heat and shrink the outer portion of the semiconductor chip 31 holding region in the dicing tape 10 before the expanded state is released.

After the step C, there may be provided a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 10 having the semiconductor chip 31 with the adhesive layer with a cleaning liquid such as water, if necessary.

(Process D)

In step D (pickup step), the singulated semiconductor chip with the adhesive layer is picked up. In one embodiment of step D, after the cleaning step described above as necessary, the semiconductor chip 31 with the adhesive layer is picked up from the dicing tape 10 as shown in fig. 6. For example, the semiconductor chip 31 with the adhesive layer to be picked up is lifted up via the dicing tape 10 by raising the needle member 44 of the pickup mechanism at the lower side of the dicing tape 10 in the drawing, and then is sucked and held by the suction jig 45. In the picking-up step, the needle member 44 is pushed up at a speed of, for example, 1 to 100 mm/sec and the needle member 44 is pushed up at a height of, for example, 50 to 3000 μm.

The method of manufacturing a semiconductor device may further include a step other than the steps a to D. For example, in one embodiment, as shown in fig. 7 (a), the picked-up semiconductor chip 31 with the adhesive layer is temporarily fixed to an adherend 51 via the adhesive layer 21 (temporary fixing step).

Examples of the adherend 51 include: lead frames, TAB (Tape automated bonding) films, wiring substrates, separately fabricated semiconductor chips, and the like. The shear adhesion strength of the adhesive layer 21 at 25 ℃ at the time of temporary fixing is preferably 0.2MPa or more, more preferably 0.2 to 10MPa, to the adherend 51. The configuration in which the shear adhesion force of the adhesive layer 21 is 0.2MPa or more can suppress shear deformation of the adhesive surface of the adhesive layer 21 and the semiconductor chip 31 or the adherend 51 caused by ultrasonic vibration or heating in the wire bonding step described later, and thus wire bonding can be performed appropriately. The shear adhesion strength of the adhesive layer 21 at 175 ℃ during temporary fixation is preferably 0.01MPa or more, and more preferably 0.01 to 5MPa, with respect to the adherend 51.

Then, as shown in fig. 7 b, the electrode pad (not shown) of the semiconductor chip 31 and a terminal portion (not shown) of the adherend 51 are electrically connected by a bonding wire 52 (wire bonding step).

The connection of the electrode pad of the semiconductor chip 31, the terminal portion of the adherend 51, and the bonding wire 52 can be achieved by ultrasonic welding with heating, and is performed so that the adhesive layer 21 is not thermally cured. As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The heating temperature of the wire in the wire bonding is, for example, 80 to 250 ℃, preferably 80 to 220 ℃. The heating time is several seconds to several minutes.

Then, as shown in fig. 7 c, the semiconductor chip 31 is encapsulated with an encapsulating resin 53 for protecting the semiconductor chip 31 and the bonding wire 52 on the adherend 51 (encapsulating step).

In the sealing step, thermosetting of the adhesive layer 21 is performed. In the encapsulating process, the encapsulating resin 53 is formed by, for example, a transfer molding technique using a mold. As a constituent material of the encapsulating resin 53, for example, an epoxy resin can be used. In the sealing step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ℃, and the heating time is, for example, 60 seconds to several minutes.

When the curing of the encapsulating resin 53 is not sufficiently performed in the encapsulating step, a post-curing step for completely curing the encapsulating resin 53 is performed after the encapsulating step. Even when the adhesive layer 21 is not completely heat-cured in the sealing step, the adhesive layer 21 can be completely heat-cured together with the sealing resin 53 in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ℃, and the heating time is, for example, 0.5 to 8 hours.

In the above embodiment, as described above, after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51, the wire bonding step is performed in a state where the adhesive layer 21 is not completely thermally cured. Instead of this configuration, in the above-described method for manufacturing a semiconductor device, after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51, the adhesive layer 21 may be thermally cured, and then the wire bonding step may be performed.

In the method for manufacturing a semiconductor device, as another embodiment, a wafer thinning step shown in fig. 8 may be performed instead of the wafer thinning step described above with reference to fig. 2 (d). After the above-described process with reference to fig. 2 (c), in the wafer thinning step shown in fig. 8, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state where the semiconductor wafer W is held on the wafer processing tape T2, and the semiconductor wafer divided bodies 30B including the plurality of semiconductor chips 31 and held on the wafer processing tape T2 are formed.

In the wafer thinning step, the wafer may be ground until the dividing groove 30a is exposed on the 2 nd surface Wb side (method 1), or the following method may be used: the wafer is ground from the 2 nd surface Wb side until the wafer reaches the dividing grooves 30a, and then a crack is generated between the dividing grooves 30a and the 2 nd surface Wb by the pressing force of the rotating grindstone against the wafer, thereby forming semiconductor wafer divided bodies 30B (method 2). The depth from the 1 st surface Wa of the dividing groove 30a formed as described above with reference to fig. 2 (a) and 2 (b) is determined as appropriate depending on the method used.

Fig. 8 schematically shows the dividing groove 30a obtained by the method 1 or the dividing groove 30a obtained by the method 2 and the crack connected thereto by a thick line. In the above-described method for manufacturing a semiconductor device, the steps described above with reference to fig. 3 to 7 may be performed using the semiconductor wafer segment 30B thus produced as a semiconductor wafer segment in the step a instead of the semiconductor wafer 30A.

Fig. 9 (a) and 9 (B) show a step B in this embodiment, that is, a 1 st expanding step (cold expanding step) performed after the semiconductor wafer segment 30B is bonded to the dicing die-bonding film 1.

In step B of this embodiment, the hollow cylindrical jacking member 43 provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die-bonding film 1 in the drawing and is raised, and the dicing tape 10 of the dicing die-bonding film 1 to which the semiconductor wafer segments 30B are bonded is expanded so as to be stretched in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer segments 30B.

The expansion is performed under conditions that a tensile stress in the range of, for example, 5 to 28MPa, preferably 8 to 25MPa is generated in the dicing tape 10. The temperature condition in the cold expansion step is, for example, 0 ℃ or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The expansion rate (speed for raising the jack-up member 43) in the cold expansion step is preferably 1 to 400 mm/sec. In addition, the expansion amount in the cold expansion process is preferably 50 to 200 mm.

By the cold spreading step, the adhesive layer 20 of the dicing die-bonding film 1 is cut into small adhesive layers 21, and the semiconductor chip 31 with an adhesive layer is obtained. Specifically, in the cold expanding step, in the adhesive layer 20 that adheres to the adhesive layer 12 of the expanded dicing tape 10, deformation is suppressed in each region where each semiconductor chip 31 of the semiconductor wafer divided body 30B adheres, while such a deformation suppressing action is not generated at a position along the vertical direction in the drawing where the dividing groove 30a between the semiconductor chips 31 is located, and the tensile stress generated in the dicing tape 10 in this state acts. As a result, the adhesive layer 20 is cut at a position along the vertical direction in the drawing where the dividing groove 30a between the semiconductor chips 31 is located.

In the above-described method for manufacturing a semiconductor device, as still another embodiment, a semiconductor wafer 30C produced as follows may be used instead of the semiconductor wafer 30A or the semiconductor wafer divided bodies 30B used in the step a.

In this embodiment, as shown in fig. 10 (a) and 10 (b), first, the modified region 30b is formed in the semiconductor wafer W. The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor elements (not shown) have been already mounted on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements have also been formed on the 1 st surface Wa.

Then, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the 1 st surface Wa side of the semiconductor wafer W, the semiconductor wafer W is irradiated with laser light having a focal point located inside the wafer from the side opposite to the wafer processing tape T3 along the pre-dividing line in a state where the semiconductor wafer W is held on the wafer processing tape T3, and the modified region 30b is formed in the semiconductor wafer W by ablation due to multiphoton absorption. The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor chip units.

A method for forming the modified region 30b on the pre-dividing line by laser irradiation in the semiconductor wafer is described in detail in, for example, japanese patent application laid-open No. 2002-192370, and the laser irradiation conditions in this embodiment can be appropriately adjusted within the following ranges, for example.

< laser irradiation Condition >

(A) Laser

(B) Lens for condensing light

Multiplying power of 100 times or less

NA 0.55

Transmittance to laser wavelength of 100% or less

(C) The moving speed of the mounting table for mounting the semiconductor substrate is below 280 mm/s

Then, as shown in fig. 10C, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state where the semiconductor wafer W is held on the wafer processing tape T3, thereby forming a semiconductor wafer 30C which can be singulated into a plurality of semiconductor chips 31 (wafer thinning step).

In the above-described method for manufacturing a semiconductor device, the semiconductor wafer 30C produced as described above may be used in the step a instead of the semiconductor wafer 30A as a semiconductor wafer that can be singulated, and the above-described steps shown in fig. 3 to 7 may be performed.

Fig. 11 (a) and 11 (B) show a step B in this embodiment, that is, a 1 st expanding step (cold expanding step) performed after the semiconductor wafer 30C is bonded to the dicing die-bonding film 1.

In the cold spreading step, the hollow cylindrical jacking member 43 provided in the spreading device is brought into contact with the dicing tape 10 on the lower side of the dicing die-bonding film 1 in the drawing and is raised, and the dicing tape 10 of the dicing die-bonding film 1 to which the semiconductor wafer 30C is bonded is spread so as to be stretched in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. The expansion is performed under conditions that a tensile stress in the range of, for example, 5 to 28MPa, preferably 8 to 25MPa is generated in the dicing tape 10. The temperature condition in the cold expansion step is, for example, 0 ℃ or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The expansion rate (speed for raising the jack-up member 43) in the cold expansion step is preferably 1 to 400 mm/sec. In addition, the expansion amount in the cold expansion process is preferably 50 to 200 mm.

By the cold spreading step, the adhesive layer 20 of the dicing die-bonding film 1 is cut into small adhesive layers 21, and the semiconductor chip 31 with an adhesive layer is obtained. Specifically, in the cold expansion step, cracks are formed in the fragile modified region 30b in the semiconductor wafer 30C, and the semiconductor chips 31 are singulated. At the same time, in the cold-expanding step, in the adhesive layer 20 that adheres to the adhesive layer 12 of the expanded dicing tape 10, the deformation is suppressed in each region of the semiconductor wafer 30C where the semiconductor chips 31 adhere, but such a deformation suppressing action is not generated at a position in the vertical direction in the drawing that is located at the crack formation position of the wafer, and the tensile stress generated in the dicing tape 10 in this state acts. As a result, the adhesive layer 20 is cut at a position along the vertical direction in the drawing of the crack formation position between the semiconductor chips 31.

In the above-described method for manufacturing a semiconductor device, the dicing die-bonding film 1 can be used for the purpose of obtaining a semiconductor chip with an adhesive layer as described above, but can also be used for the purpose of obtaining a semiconductor chip with an adhesive layer when a plurality of semiconductor chips are stacked and mounted in 3 dimensions. The semiconductor chips 31 mounted in 3-dimensional manner may or may not be provided with a spacer interposed therebetween together with the adhesive layer 21.

Examples

The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples. In the examples and comparative examples, the pressure-sensitive adhesive layers constituting the acrylic polymer P₂The composition of each monomer component (2) is shown in Table 1. Wherein, in Table 1The unit of each numerical value representing the composition of the composition is relative "mole" with respect to the numerical value of the monomer component, and relative to the acrylic polymer P with respect to the numerical value of each component other than the monomer component₂100 parts by mass of "parts by mass".

Example 1

(cutting tape)

In a reaction vessel equipped with a condenser, a nitrogen inlet tube, a thermometer, and a stirring device, a mixture containing 100 moles of 2-ethylhexyl acrylate (2EHA), 20 moles of 2-hydroxyethyl acrylate (HEA), 2 parts by mass of benzoyl peroxide as a polymerization initiator per 100 parts by mass of the total amount of these monomer components, and toluene as a polymerization solvent was stirred at 61 ℃ for 6 hours under a nitrogen atmosphere (polymerization reaction). Thus, an acrylic polymer P was obtained₁The polymer solution of (1).

Then, the acrylic acid-containing polymer P is contained₁A mixture of the polymer solution of (1), 2-methacryloyloxyethyl isocyanate (MOI) and dibutyltin dilaurate as an addition reaction catalyst was stirred at 50 ℃ for 48 hours under an air atmosphere (addition reaction). In the reaction solution, the amount of MOI compounded was 16 mol. Further, in this reaction solution, the compounding amount of dibutyltin dilaurate to the acrylic polymer P₁100 parts by mass is 0.01 part by mass. By this addition reaction, an acrylic polymer P containing a methacrylate group in the side chain is obtained₂(acrylic polymer containing structural units derived from an unsaturated functional group-containing isocyanate compound).

Then, to the polymer solution, the acrylic polymer P was added₂100 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by tokyo co., ltd.) and 2 parts by mass of a photopolymerization initiator (trade name "IRGACURE 127", manufactured by BASF) were mixed, and the mixture was diluted with toluene so that the viscosity of the mixture at room temperature was 500mPa · s to obtain an adhesive composition.

Next, an adhesive composition was applied to the silicone release-treated surface of the PET release film (thickness 50 μm) having the silicone release-treated surface using an applicator to form an adhesive composition layer. Then, the composition layer was subjected to desolvation based on heating at 120 ℃ for 2 minutes to form an adhesive layer having a thickness of 10 μm on the PET release film.

Then, an EVA resin film (125 μm thick, manufactured by ritto electrical co., ltd.) as a base material was laminated on the exposed surface of the pressure-sensitive adhesive layer at room temperature using a laminator. The bonded body was then stored at 50 ℃ for 24 hours. The dicing tape of example 1 was produced in the above manner.

(adhesive layer)

Mixing acrylic polymer A₁100 parts by mass of a solid phenol resin (trade name "MEHC-7851 SS", manufactured by Nagase chemtex corporation) and 12 parts by mass of a solid phenol resin (trade name "MEHC-7851 SS", manufactured by sokume chemical corporation, 23 ℃) and 100 parts by mass of a silica filler (trade name "SO-C2", average particle diameter 0.5 μm, admatexco, manufactured by ltd.) were added to methyl ethyl ketone, and mixed, and the concentration was adjusted SO that the concentration of the solid component became 18 mass%, thereby obtaining an adhesive composition.

Then, an adhesive composition was applied to the silicone release-treated surface of the PET release film (thickness: 50 μm) having the silicone release-treated surface using an applicator to form a coating film, and the coating film was desolventized at 130 ℃ for 2 minutes. In the above manner, an adhesive layer having a thickness of 15 μm in example 1 was formed on the PET barrier film.

(preparation of dicing die-bonding film)

The PET-based release film was peeled from the dicing tape of example 1, and the adhesive layer of example 1 was bonded to the exposed adhesive layer. Hand pressing rollers are used for bonding. Thus, a dicing die-bonding film of example 1 was produced.

Examples 2 to 17 and comparative examples 1 to 9

In the preparation of the pressure-sensitive adhesive layer, the method for forming the acrylic polymer P was changed as shown in tables 1 and 2₁Monomer composition of (A), MDicing tapes and dicing die-bonding films were produced in the same manner as in example 1, except for the amount of OI added, the type and amount of photopolymerization initiator added, and the type and amount of polyisocyanate compound added.

In tables 1 and 2, "EA" represents ethyl acrylate, "BA" represents butyl acrylate, "2 MEA" represents 2-methoxyethyl acrylate, "4 HBA" represents 4-hydroxybutyl acrylate, "AM" represents acryloyl morpholine, "IRGACURE 184" represents the trade name "IRGACURE 184" (manufactured by BASF), "IRGACURE 651" represents the trade name "IRGACURE 651" (manufactured by BASF), "IRGACURE 369" represents the trade name "IRGACURE 369" (manufactured by BASF), "IRGACURE 2959" represents the trade name "IRGACURE 2959" (manufactured by BASF), and "Coronate HL" represents the trade name "Coronate HL" (manufactured by eastern co.

< evaluation >

The dicing die-bonding films obtained in examples and comparative examples were evaluated as follows. The results are shown in table 1.

(hardness based on nanoindentation method)

With respect to each of the dicing die-bonding films obtained in examples and comparative examples, the adhesive layer was peeled from the adhesive layer, and the surface of the adhesive layer was subjected to nanoindentation measurement under the following conditions using a nanoindenter (trade name "tribo", manufactured by hysion inc.). The hardness obtained is shown in table 1.

Using a pressure head: berkovich (triangular pyramid type)

The determination method comprises the following steps: single indentation assay

Measuring temperature: 23 deg.C

Frequency: 100Hz

Setting the pressing depth: 500nm

Loading: 1mN, 1,

Application load speed: 0.1mN/s

Load removal speed: 0.1mN/s

Retention time: 1s

(T type peeling test)

The dicing die-bonding films obtained in examples and comparative examples were examined for the peeling force between the pressure-sensitive adhesive layer and the adhesive layer in the following manner. First, a test piece was produced from each dicing die-bonding film. Specifically, a backing tape (trade name "BT-315", manufactured by ritonao electric corporation) was attached to the adhesive layer side of the dicing die-bonding film, and a test piece having a width of 50mm × a length of 120mm was cut out from the dicing die-bonding film with the backing tape. Then, the test piece was subjected to a T-peel test using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu corporation) to measure a peel force (N/20 mm). In this measurement, the temperature condition was 23 ℃ and the peeling speed was 300 mm/min. The measurement results are shown in the table.

(lifting of semiconductor chip with adhesive layer)

As a laser processing apparatus, a trade name "ML 300-Integration" (manufactured by tokyo co., ltd.) was used, and a modified region was formed inside a semiconductor wafer by irradiating a laser beam along a pre-dividing line in a lattice shape (10mm × 10mm) with a light converging point positioned inside a 12-inch semiconductor wafer. The laser irradiation was performed under the following conditions.

(A) Laser

(B) Lens for condensing light

Multiplying power of 50 times

NA 0.55

Transmittance at laser wavelength of 60%

(C) The moving speed of the mounting table on which the semiconductor substrate is mounted is 100 mm/sec

A method for forming the modified region 30b on the preliminary dividing line by laser irradiation on the semiconductor wafer is described in detail in, for example, japanese patent application laid-open No. 2002-192370, and the laser irradiation conditions in this embodiment are appropriately adjusted within the following ranges, for example.

< laser irradiation Condition >

(A) Laser

(B) Lens for condensing light

Multiplying power of 100 times or less

NA 0.55

Transmittance to laser wavelength of 100% or less

After forming the modified region in the semiconductor wafer, a protective tape for back grinding was attached to the front surface of the semiconductor wafer, and the back surface was ground so that the thickness of the semiconductor wafer was 30 μm using a back grinding machine (trade name "DGP 8760", manufactured by DISCO Corporation).

Specifically, the semiconductor wafer was cut by cold expanding the semiconductor wafer using a cold expanding unit under conditions of a temperature of-15 ℃, a speed (expanding speed) at the time of cold expanding of 200 mm/sec, and an expanding amount of 14mm, and then the area of a portion of the adhesive layer floating from the dicing tape (the proportion of the area of the semiconductor chip with the adhesive layer floating when the area of the entire adhesive layer was 100%) was observed with a microscope, and the results were evaluated as ○ when the adhesive layer did not float or float within an allowable range and x when the adhesive layer floated significantly in the cold expanding process.

After the semiconductor wafer and the adhesive layer were cut, the cold-expanding unit was used as it is to expand at room temperature under conditions of room temperature, an expansion rate of 1 mm/sec, and an expansion amount of 5mm, and then the area of the portion of the adhesive layer floating from the dicing tape (the ratio of the area of the semiconductor chip with the adhesive layer floating when the area of the entire adhesive layer was 100%) was observed with a microscope.

[ Table 1]

[ Table 2]

With the dicing die-bonding films of examples 1 to 17, the adhesive layer was satisfactorily cut in the cold-expanding step, the normal-temperature expanding step, and after the lapse of time, without causing the semiconductor chip with the adhesive layer to float from the dicing tape, and the semiconductor chip with the adhesive layer was picked up appropriately in the pickup step.

Claims

1. A dicing die-bonding film comprising:

a dicing tape having a laminated structure including a substrate and an adhesive layer; and

an adhesive layer that releasably adheres to the adhesive layer in the dicing tape,

the surface of the adhesive layer before radiation curing of the dicing die-bonding film has a hardness of 0.04 to 0.8MPa based on a nanoindentation method at a temperature of 23 ℃ and a frequency of 100Hz,

the peeling force between the pressure-sensitive adhesive layer and the adhesive layer before radiation curing in a T-type peeling test under the conditions of a temperature of 23 ℃ and a peeling speed of 300 mm/min is 0.3N/20mm or more.

2. The dicing die-bonding film according to claim 1, wherein the adhesive layer contains a 1 st acrylic polymer, the 1 st acrylic polymer containing a structural unit derived from a nitrogen atom-containing monomer.

3. The dicing die-bonding film according to claim 2, wherein the structural unit derived from a nitrogen atom-containing monomer comprises a structural unit derived from (meth) acryloyl morpholine.