TWI789409B - Die-bonding film, die-cutting die-bonding film, and semiconductor device manufacturing method - Google Patents

Abstract

The present invention provides a die bonding film, a die bonding film, and a semiconductor device manufacturing method suitable for achieving good severing and suppressing spatter in an expansion step using a die bonding film to obtain a semiconductor wafer with a die bonding film . With regard to the die bonding film 10 of the present invention, the yield point in the tensile test of a die bonding film test piece with a width of 10 mm under the conditions of an initial chuck distance of 10 mm, 23°C and a tensile speed of 300 mm/min The strength is below 15 N, the breaking strength is below 15 N, and the elongation at break is 40-400%.

Description

Die-bonding film, die-cutting die-bonding film, and semiconductor device manufacturing method

The present invention relates to a die bonding film and a dicing die bonding film that can be used in the manufacturing process of a semiconductor device, and a manufacturing method of the semiconductor device.

In the manufacturing process of semiconductor devices, in order to obtain a semiconductor wafer with an adhesive film equivalent to the size of the wafer for die-bonding, that is, a semiconductor wafer with a die-bonding film, a die-cutting die-bonding film is sometimes used. The dicing die bonding film has a size corresponding to the semiconductor wafer to be processed, for example, has a dicing tape including a base material and an adhesive layer, and a die bonding film that is releasably adhered to the adhesive layer side.

As one of the methods of obtaining a semiconductor wafer with a die-bonding film using a dicing die-bonding film, a method of cutting the die-bonding film through a step of expanding a dicing tape of the dicing die-bonding film is known. In the method, firstly, a semiconductor wafer as a workpiece is pasted on the die bonding film of the dicing die bonding film. The semiconductor wafer is, for example, processed in such a manner that it can be cut and singulated into a plurality of semiconductor wafers together with the cutting of the die-bonding film later on. Next, in order to cut the die adhesive film from the die adhesive film on the dicing tape to produce a plurality of small pieces of adhesive film that are respectively in close contact with the semiconductor wafer, the dicing tape of the dicing die adhesive film is expanded (expansion for cutting) step). In the expanding step, the semiconductor wafer on the die adhesive film is also cut at the portion corresponding to the cut portion of the die adhesive film, and the semiconductor wafer is singulated into a plurality of semiconductor wafers on the die adhesive film or the dicing tape. Secondly, for example, after a cleaning step, each semiconductor wafer is lifted up from the lower side of the crystal-cutting belt by the pin member of the pick-up mechanism together with the die-bonding film that is closely attached to it and is equivalent to the size of the wafer, thereby self-cutting the crystal. Bring on pickup. In this way, a semiconductor wafer with a crystal film attached is obtained. The semiconductor chip attached with the die-adhesive film is fixed on an adherend such as a mounting substrate by die-bonding through the die-adhesive film. For example, technologies related to the dicing die-bonding film used in the above manner and the die-bonding film contained therein are disclosed in, for example, Patent Documents 1 to 3 below. [Prior Art Document] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2007-2173 [Patent Document 2] Japanese Patent Laid-Open No. 2010-177401 [Patent Document 3] Japanese Patent Laid-Open No. 2012-23161

[Problem to be solved by the invention]

It is required that the die bonding film, which is one of the constituent elements of the dicing die bonding film used in the above-mentioned expanding step for dicing, be properly cleaved at the site to be diced in the expanding step. Also, there is a tendency that the thicker the adhesion film is, the more difficult it is to cause such a cut.

In the spreading step for dicing as described above, beforehand, the die-bonding film sometimes splashes from the dicing tape in the area of the die-bonding film that is not bonded to the workpiece. In addition, there is a tendency that the spatter tends to be generated more easily as the thickness of the die adhesion film becomes thicker. Such spattering of the die-bonding film sometimes becomes the cause of workpiece contamination, so it is not good.

The present invention has been conceived and completed based on the above circumstances, and its object is to provide a method suitable for achieving good severing and suppressing spatter in the expansion step of using a die-bonding film for obtaining a semiconductor wafer with a die-bonding film A die-bonding film, a die-cutting die-bonding film, and a method for manufacturing a semiconductor device. [Technical means to solve the problem]

According to a first aspect of the present invention, a die bonding film is provided. For the die bond film, the yield point strength in the tensile test of the die bond film test piece with a width of 10 mm at the initial chuck distance of 10 mm, 23°C and a tensile speed of 300 mm/min (the force required to reach the yield point) is less than 15 N, the breaking strength (force required for breaking) under the same test is less than 15 N, and the elongation at break (the length of the elongated part at break relative to the The ratio of the length before elongation) is 40 to 400%. Also, in the present invention, the above-mentioned yield point strength is preferably 12 N or less, more preferably 10 N or less, the above-mentioned breaking strength is preferably 12 N or less, more preferably 10 N or less, and the above-mentioned elongation at break is preferably 40 ~350%, more preferably 40~300%. The die-bonding film of such a constitution can be used for obtaining a semiconductor wafer with a die-bonding film in the manufacturing process of a semiconductor device in a state of being in close contact with the adhesive layer side of the dicing tape.

In the manufacturing process of a semiconductor device, as described above, in order to obtain a semiconductor wafer with a die-attach film, an expanding step for dicing using a dicing die-attach film is sometimes carried out. The inventors of the present invention found that: for the die bonding film that is one of the components of the dicing die bonding film, for the die bonding film test piece with a width of 10 mm, the distance between the chucks at the initial stage is 10 mm, 23°C and the tensile speed In the tensile test under the condition of 300 mm/min, the strength at the yield point is 15 N or less, the breaking strength is 15 N or less, and the elongation at break is 40 to 400%. When the crystal film is relatively thick, for the die bonding film in the expansion step, it can also be cut at the part where it is planned to be cut and the splash from the dicing tape can be suppressed. For example, as shown in the following Examples and Comparative Examples.

It is considered that the elongation at break of the above-mentioned tensile test of the present die bonding film is 40-400%, preferably 40-350%, and more preferably 40-300%. The tensile length to sever the die bonding film becomes too large and makes the die bonding film prone to ductile failure rather than brittle failure. In the expanding step, the easier the die bonding film is to undergo ductile failure, the easier it is for the stress for cutting to be transmitted to the part where the film is to be cut, and therefore, it is easier to cut at the part where the film is to be cut.

It is considered that the yield point strength of the die bonding film in the above tensile test is 15 N or less, preferably 12 N or less, more preferably 10 N or less, and the breaking strength is 15 N or less, preferably 12 N or less, and more preferably 12 N or less. The above-mentioned configuration, preferably 10 N or less, is suitable for suppressing the strain energy accumulated inside the film during the elongation process of the die-bonding film during the spreading step for severing and during the fracture process. In the expansion step, the smaller the internal accumulated strain energy during the elongation process and the fracture process, the more difficult it is for the bonding film to break in its exposed area (area not covered by the workpiece) and cause the film to splash.

As described above, the die bonding film according to the first aspect of the present invention is suitable for achieving good dicing and suppressing spattering when used in an expanding step for dicing in a form in close contact with the adhesive layer side of the dicing tape.

The thickness of the die bonding film is preferably above 40 μm, more preferably above 60 μm, more preferably above 80 μm. This structure is suitable for the following aspects: using this die bonding film, as the first semiconductor chip to be mounted by wire bonding on the mounting substrate and the whole or part of the bonding wire connected to the first semiconductor chip are embedded together and placed on the mounting substrate. Adhesive film for forming the adhesive layer for bonding the second semiconductor wafer (thicker adhesive film for semiconductor wafer embedding). Alternatively, the structure related to the thickness of the die-bonding film is suitable in that the present die-bonding film is used to cover and embed the bonding wire of the first semiconductor chip to be mounted by wire-bonding on the mounting substrate. Adhesive film for bonding a part of the first semiconductor wafer to the adhesive layer of the second semiconductor wafer (thicker adhesive film for inter-semiconductor wafer bonding with partial embedding of bonding wires). Alternatively, the structure related to the thickness of the die-bonding film is suitable for a method of embedding the first semiconductor chip to be flip-chip mounted on the mounting substrate and bonding the second semiconductor chip to the mounting substrate by using the present die-bonding film. Adhesive film for adhesive layer formation (thicker adhesive film for wafer embedding). In addition, the thickness of the die bonding film is preferably not more than 200 μm, more preferably not more than 160 μm, more preferably not more than 120 μm. Such a constitution is preferable in the following respects: avoiding the yield point strength, breaking strength, and elongation at break of the present crystal adhesive film from becoming too large, and realizing the yield point strength in the above-mentioned tensile test of 15 N or less, and the breaking strength of 15 N The above-mentioned constitution below and an elongation at break of 40 to 400%.

The viscosity of the die bonding film at 120°C in an uncured state is preferably at least 300 Pa·s, more preferably at least 700 Pa·s, more preferably at least 1000 Pa·s. The viscosity of the die bonding film at 120°C in an unhardened state is preferably not more than 5000 Pa·s, more preferably not more than 4500 Pa·s, more preferably not more than 4000 Pa·s. These configurations related to the viscosity of the die-bonding film are suitable for using the present die-bonding film as the various thicker adhesive films described above for the formation of the adhesive layer accompanying the embedding of semiconductor chips or bonding wires.

The die bonding film preferably contains an inorganic filler, and the content of the inorganic filler in the die bonding film is preferably at least 10% by mass, more preferably at least 20% by mass, more preferably at least 30% by mass. Also, when the present die bonding film contains an inorganic filler, the inorganic filler content is preferably at most 50% by mass, more preferably at most 45% by mass, even more preferably at most 40% by mass. There is a tendency that the higher the content of the inorganic filler in the film for forming the adhesive layer, the smaller the elongation at break of the film and the higher the strength of the drop point. Therefore, the composition related to the content of the inorganic filler in the present adhesive film It is suitable for the following aspects: suppressing the above-mentioned phenomenon that the exposed area (area not covered by the workpiece) of the die bonding film is broken and the film is splashed.

The die bonding film preferably contains an organic filler, and the content of the organic filler in the die bonding film is preferably at least 2% by mass, more preferably at least 5% by mass, and more preferably at least 8% by mass. Also, when the present die bonding film contains an organic filler, the organic filler content is preferably at most 20% by mass, more preferably at most 17% by mass, more preferably at most 15% by mass. This composition related to the content of the organic filler in the present die bond film is suitable for controlling the yield point strength and breaking strength of the present die bond film within an appropriate range.

The die bonding film preferably contains an acrylic resin with a glass transition temperature of -40 to 10°C. Such a configuration is suitable for realizing the above-mentioned configuration in which the yield point strength in the above-mentioned tensile test of the present die bonding film is 15 N or less.

According to a second aspect of the present invention, a die-cutting die-bonding film is provided. This dicing die bonding film includes a dicing tape and the above-mentioned die bonding film of the first aspect of the present invention. The dicing tape has a laminated structure including a base material and an adhesive layer. The die-bonding film is releasably attached closely to the adhesive layer of the die-cutting tape. Such a dicing die-bonding film having the die-bonding film of the first aspect of the present invention is suitable for achieving good dicing in the die-bonding film and suppressing spatter when used in the spreading step for dicing.

According to a third aspect of the present invention, there is provided a method of manufacturing a semiconductor device. This semiconductor device manufacturing method includes the following first step and second step. In the first step, a semiconductor wafer that can be singulated into a plurality of semiconductor wafers, or a semiconductor wafer including a plurality of semiconductor wafers is attached to the adhesive film of the dicing die adhesive film of the second aspect of the present invention split body. In the second step, the die-attach film is cut by extending the dicing tape of the die-attach film to obtain a semiconductor wafer with the die-adhesive film. This method of manufacturing a semiconductor device including the second step, that is, the expansion step for dicing, performed using the die-bonding film having the first aspect of the present invention, is suitable for realizing a good die bonding film in the expansion step. Cut off and contain the splash.

FIG. 1 is a schematic cross-sectional view of a die-cutting die-bonding film X according to an embodiment of the present invention. The dicing die bonding film X has a laminated structure including the die bonding film 10 and the dicing tape 20 according to one embodiment of the present invention. The crystal cutting tape 20 has a laminated structure including a base material 21 and an adhesive layer 22 . The adhesive layer 22 has an adhesive surface 22 a on the side of the die bonding film 10 . The die-bonding film 10 is releasably attached to the adhesive layer 22 of the die-cutting tape 20 or its adhesive surface 22a. The dicing die-bonding film X can be used, for example, in the following expansion steps in the process of obtaining a semiconductor wafer with a die-bonding film in the manufacture of a semiconductor device. In addition, the die-cutting die-bonding film X has a disk shape with a size corresponding to a semiconductor wafer as a workpiece in the manufacturing process of a semiconductor device, and its diameter is, for example, in the range of 345 to 380 mm (for 12-inch wafers). ), within the range of 245-280 mm (for 8-inch wafers), within the range of 495-530 mm (for 18-inch wafers), or within the range of 195-230 mm (for 6-inch wafers) type).

The die bonding film 10 of the dicing die bonding film X has a configuration capable of functioning as a thermosetting adhesive for die bonding. The die-bonding film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as resin components, or may have a composition containing a thermoplastic resin with a thermosetting functional group capable of reacting with a curing agent to form a bond. When the die bonding film 10 has a composition containing a thermoplastic resin with a thermosetting functional group, the die bonding film 10 does not need to further contain a thermosetting resin. Such a die bonding film 10 may have a single-layer structure, or may have a multi-layer structure whose composition differs between adjacent layers.

As the thermosetting resin when the die bonding film 10 has a composition containing a thermosetting resin and a thermoplastic resin, for example, epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyamine urethane resin, silicone resin and thermosetting polyimide resin. The die bonding film 10 may contain one kind of thermosetting resin, or may contain two or more thermosetting resins. Epoxy resin tends to contain less ionic impurities, etc., which may cause corrosion of the semiconductor wafer to be bonded, so it is preferable as a thermosetting resin in the die-bonding film 10 . Moreover, as a hardening|curing agent for expressing thermosetting property to an epoxy resin, a phenol resin is preferable.

Examples of epoxy resins include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoylurea type, triglycidyl isocyanurate type and glycidylamine type epoxy resin. Phenol novolak type epoxy resin, o-cresol novolak type epoxy resin, biphenyl type epoxy resin, trihydroxyphenylmethane type epoxy resin and tetraphenol ethane type epoxy resin are rich and effective as hardeners. The epoxy resin in the die-bonding film 10 is preferable in terms of the reactivity of the phenolic resin and excellent heat resistance.

As a phenol resin which can be used as a hardening|curing agent of an epoxy resin, a novolac type phenol resin, a resole type phenol resin, and polyhydroxystyrenes, such as polyparahydroxystyrene, are mentioned, for example. Examples of the novolak-type phenol resin include phenol novolak resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolak resins, and nonylphenol novolac resins. The die-bonding film 10 may contain one kind of phenolic resin as the hardening agent of the epoxy resin, or may contain two or more kinds of phenolic resins as the hardening agent of the epoxy resin. Phenol novolac resin or phenol aralkyl resin has a tendency to improve the connection reliability of the adhesive when used as a hardener of epoxy resin as an adhesive for die-bonding, so it is used in the die-bonding film 10. Hardener for epoxy resin is better.

When the die-bonding film 10 contains epoxy resin and phenol resin as its hardener, the hydroxyl group in the phenol resin is preferably 0.5-2.0 equivalents with respect to the epoxy group in the epoxy resin, more preferably The ratio of 0.8 to 1.2 equivalents is used to prepare the two resins. Such a configuration is preferable in that the hardening reaction of the epoxy resin and the phenolic resin is sufficiently advanced when the die bonding film 10 is hardened.

The content ratio of the thermosetting resin in the die bonding film 10 is preferably 5 to 60% by mass, more preferably 10% from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the die bonding film 10 . ~50% by mass.

The thermoplastic resin in the die-bonding film 10 is, for example, responsible for the function of an adhesive. As the thermoplastic resin in the case where the die-bonding film 10 has a composition containing a thermosetting resin and a thermoplastic resin, for example, acrylic resin, natural Rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene resin, polycarbonate resin, Thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, saturated polyester resin such as polyethylene terephthalate or polybutylene terephthalate, Polyamide imide resin and fluororesin. The die attach film 10 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. Acrylic resin is preferable as the thermoplastic resin in the die attach film 10 because it has less ionic impurities and has higher heat resistance.

When the die-bonding film 10 contains an acrylic resin as the thermoplastic resin, the acrylic resin preferably contains the most monomer units derived from (meth)acrylate in terms of mass ratio. "(Meth)acrylic" means "acrylic" and/or "methacrylic".

As the (meth)acrylate used to form the monomer unit of the acrylic resin, that is, the (meth)acrylate used as the constituent monomer of the acrylic resin, for example, alkyl (meth)acrylate, Cycloalkyl (meth)acrylate and aryl (meth)acrylate. Examples of the alkyl (meth)acrylate include: methyl (meth)acrylate, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, third butyl ester, Amyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (ie lauryl ester), tridecyl ester, myristyl ester, cetyl ester, stearyl ester and eicosyl ester. As cycloalkyl (meth)acrylate, cyclopentyl and cyclohexyl (meth)acrylate are mentioned, for example. As aryl (meth)acrylate, a phenyl (meth)acrylate and benzyl (meth)acrylate are mentioned, for example. As a constituent monomer of the acrylic resin, one type of (meth)acrylate may be used, or two or more types of (meth)acrylate may be used. Also, the acrylic resin can be obtained by polymerizing the raw material monomers used to form it. As a polymerization method, solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization are mentioned, for example.

Acrylic resins may use one or two or more other monomers that can be copolymerized with (meth)acrylates as constituent monomers in order to improve cohesion or heat resistance, for example. Examples of such monomers include: carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylic group-containing monomers, amide and acrylonitrile. Examples of carboxyl group-containing monomers include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, and fumaric acid. and crotonic acid. As an acid anhydride monomer, maleic anhydride and itaconic anhydride are mentioned, for example. Examples of hydroxyl-containing monomers include: 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxy (meth)acrylate -Hydroxyhexyl, (meth)acrylate 8-hydroxyoctyl, (meth)acrylate 10-hydroxydecyl, (meth)acrylate 12-hydroxylauryl and (meth)acrylate (4-hydroxymethylcyclo Hexyl) methyl ester. Examples of the epoxy group-containing monomer include glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Examples of monomers containing sulfonic acid groups include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamide Sulfonic acid and (meth)acryloxynaphthalenesulfonic acid. As a monomer containing a phosphoric acid group, 2-hydroxyethyl acryloyl phosphate is mentioned, for example.

From the viewpoint of achieving higher cohesion in the die attach film 10, the acrylic resin contained in the die attach film 10 is preferably a copolymer of butyl acrylate, ethyl acrylate, and acrylonitrile.

When the die bonding film 10 has a composition including a thermoplastic resin with a thermosetting functional group, as the thermoplastic resin, for example, an acrylic resin having a thermosetting functional group can be used. The acrylic resin used to form the thermosetting functional group-containing acrylic resin preferably contains the most monomer units derived from (meth)acrylate in terms of mass ratio. As such (meth)acrylate, for example, the same (meth)acrylate as described above as a constituent monomer of the acrylic resin contained in the die bonding film 10 can be used. On the other hand, examples of the thermosetting functional group for forming the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group. Among these, a glycidyl group and a carboxyl group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be preferably used. Also, according to the type of thermosetting functional group in the thermosetting functional group-containing acrylic resin, a curing agent capable of reacting with it is selected. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, as a hardening agent, the same phenol resin as that described above as a hardening agent for epoxy resin can be used. .

Regarding the die-bonding film 10 before hardening for die-bonding, in order to achieve a certain degree of cross-linking, for example, it is preferable to prepare the above-mentioned resin composition for forming the die-bonding film in advance, which can be mixed with the above-mentioned resin composition contained in the die-bonding film 10. The polyfunctional compound which reacts with the functional group at the end of the molecular chain of the resin component to form a bond is used as a crosslinking agent. Such a configuration is preferable for the die bonding film 10 in terms of improving the adhesive properties at high temperatures and improving the heat resistance. As such a crosslinking agent, a polyisocyanate compound is mentioned, for example. Examples of the polyisocyanate compound include toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyols and diisocyanates. As the content of the crosslinking agent in the resin composition for forming a die bonding film, the cohesive force of the formed die bonding film 10 is improved relative to 100 parts by mass of the resin having the above-mentioned functional group that can react with the crosslinking agent to form a bond. From the standpoint of this, it is preferably 0.05 parts by mass or more, and from the standpoint of improving the adhesive force of the formed die bonding film 10 , it is preferably 7 parts by mass or less. In addition, as a crosslinking agent in the die bonding film 10, other polyfunctional compounds such as epoxy resins may be used in combination with polyisocyanate compounds.

The glass transition temperature of the above-mentioned acrylic resin and the above-mentioned acrylic resin containing thermosetting functional groups prepared in the die bonding film 10 is preferably -40-10°C. As for the glass transition temperature of the polymer, the glass transition temperature (theoretical value) obtained based on the following Fox formula can be used. The relationship between the glass transition temperature Tg of the Fox formula polymer and the glass transition temperature Tgi of the homopolymer of each constituent monomer of the polymer. In the following Fox formula, Tg represents the glass transition temperature (°C) of the polymer, Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (°C) of the homopolymer of the monomer i. Regarding the glass transition temperature of homopolymers, literature values can be used, for example, in "New Polymer Library 7 Introduction to Synthetic Resins for Coatings" (Kyoko Kitaoka, Polymer Press, 1995) or "Acrylic Ester Catalog (1997 Edition) )" (Mitsubishi Rayon Co., Ltd.) lists the glass transition temperatures of various homopolymers. On the other hand, the glass transition temperature of the homopolymer of the monomer can also be obtained by the method specifically disclosed in Japanese Patent Application Laid-Open No. 2007-51271.

Fox formula 1/(273+Tg)=Σ[Wi/(273+Tgi)]

The die bonding film 10 may contain fillers. The blending of fillers in the die attach film 10 is preferable in terms of adjusting the elastic modulus, yield point strength, and elongation at break of the die attach film 10 . As a filler, an inorganic filler and an organic filler are mentioned. The filler can have various shapes such as spherical shape, needle shape, and flake shape. In addition, the die bonding film 10 may contain one kind of filler, or may contain two or more kinds of fillers.

Examples of the constituent materials of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate crystals. whiskers, boron nitride, crystalline silicon dioxide and amorphous silicon dioxide. Examples of the constituent material of the inorganic filler include simple metals or alloys of aluminum, gold, silver, copper, nickel, etc., amorphous carbon black, graphite, and the like. When the die bonding film 10 contains an inorganic filler, the content of the inorganic filler is preferably at least 10% by mass, more preferably at least 20% by mass, and more preferably at least 30% by mass. Also, the same content is preferably at most 50% by mass, more preferably at most 45% by mass, more preferably at most 40% by mass.

Examples of constituent materials of the organic filler include: polymethyl methacrylate (PMMA), polyimide, polyamide imide, polyether ether ketone, polyether imide, and polyester imide . When the die bonding film 10 contains an organic filler, the content of the organic filler is preferably at least 2% by mass, more preferably at least 5% by mass, and more preferably at least 8% by mass. Also, the same content is preferably at most 20% by mass, more preferably at most 17% by mass, more preferably at most 15% by mass.

When the die bonding film 10 contains a filler, the average particle diameter of the filler is preferably 0.005-10 μm, more preferably 0.05-1 μm. The structure in which the average particle diameter of the filler is 0.005 μm or more is suitable for achieving high wettability or adhesiveness to adherends such as semiconductor wafers in the die bonding film 10 . The configuration in which the average particle diameter of the filler is 10 μm or less is suitable for obtaining a sufficient filler addition effect in the die bonding film 10 and ensuring heat resistance. The average particle diameter of the filler can be obtained, for example, using a photometric particle size distribution meter (trade name "LA-910", manufactured by Horiba Seisakusho Co., Ltd.).

The die attach film 10 may contain a thermosetting catalyst. The compounding of the thermosetting catalyst in the die-bonding film 10 is preferable in that the hardening reaction of the resin component is fully carried out or the speed of the curing reaction is increased when the die-bonding film 10 is hardened. As such a thermosetting catalyst, an imidazole type compound, a triphenylphosphine type compound, an amine type compound, and a trihalogen borane type compound are mentioned, for example. Examples of imidazole compounds include: 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole , 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methyl imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2' -Methylimidazolyl-(1')]-Ethyl-S-Trisyl, 2,4-Diamino-6-[2'-Undecylimidazolyl-(1')]-Ethyl-S-Trisyl , 2,4-Diamino-6-[2'-Ethyl-4'-methylimidazolyl-(1')]-Ethyl-S-3-3,2,4-Diamino-6-[2 '-Methylimidazolyl-(1')]-Ethyl-s-tri-isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl-4-methanol Base-5-hydroxymethylimidazole. Examples of triphenylphosphine compounds include: triphenylphosphine, tributylphosphine, tri(p-methylphenyl)phosphine, tris(nonylphenyl)phosphine, diphenyltolylphosphine, tetraphenylphosphine phosphonium bromide, methyltriphenylphosphonium, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium and benzyltriphenylphosphonium chloride. The triphenylphosphine compound also includes compounds having both a triphenylphosphine structure and a triphenylborane structure. Examples of such compounds include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetrakis-p-triborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphinetriphenylborane. Examples of the amine compound include monoethanolamine trifluoroborate and dicyandiamide. As a trihalogen borane type compound, trichloroborane is mentioned, for example. The die bonding film 10 may contain one kind of thermosetting catalyst, or may contain more than two kinds of thermosetting catalysts.

The die bonding film 10 may contain one or more than two other components as needed. As this other component, a flame retardant, a silane coupling agent, and an ion scavenger are mentioned, for example. As a flame retardant, antimony trioxide, antimony pentoxide, and a brominated epoxy resin are mentioned, for example. Examples of silane coupling agents include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethylsilane Diethoxysilane. Examples of ion trapping agents include: hydrotalcites, bismuth hydroxide, hydrous antimony oxide (such as "IXE-300" manufactured by Toagosei Co., Ltd.), zirconium phosphate of a specific structure (such as Toagosei Co., Ltd. "IXE-100"), magnesium silicate (such as "KYOWAAD 600" manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (such as "KYOWAAD 700" manufactured by Kyowa Chemical Industry Co., Ltd.). Compounds that can form complexes with metal ions can also be used as ion traps. As such a compound, a triazole type compound, a tetrazole type compound, and a bipyridine type compound are mentioned, for example. Among these, triazole-based compounds are preferred from the viewpoint of the stability of complexes formed with metal ions. Examples of such triazole compounds include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, carboxybenzene Triazole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chlorobenzotriazole , 2-(2-hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-pentylphenyl) Benzotriazole, 2-(2-hydroxy-5-tertoctylphenyl)benzotriazole, 6-(2-benzotriazolyl)-4-tertoctyl-6'-tertiary Butyl-4'-methyl-2,2'-methylenebisphenol, 1-(2,3-dihydroxypropyl)benzotriazole, 1-(1,2-dicarboxydiethyl) Benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-tert-pentyl-6-{(H-benzotriazol-1-yl)methyl }phenol, 2-(2-hydroxy-5-tert-butylphenyl)-2H-benzotriazole, 3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H- Benzotriazol-2-yl)phenyl]octyl propionate, 3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl ] 2-ethylhexyl propionate, 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1,1,3, 3-tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-tert-butylphenol, 2-(2-hydroxy-5-methylphenyl)benzotri Azole, 2-(2-hydroxy-5-tertoctylphenyl)-benzotriazole, 2-(3-tert-butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzene Triazole, 2-(2-hydroxy-3,5-di-tert-pentylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5- Chloro-benzotriazole, 2-[2-hydroxy-3,5-bis(1,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2'-methylenebis [6-(2H-Benzotriazol-2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol], (2-[2-hydroxy-3,5-bis( α,α-Dimethylbenzyl)phenyl]-2H-benzotriazole and 3-[3-(2H-benzotriazol-2-yl)-5-tert-butyl-4-hydroxybenzene Base] methyl propionate. Also, specific hydroxyl-containing compounds such as hydroquinone compounds, hydroxyanthraquinone compounds, and polyphenol compounds can also be used as ion traps. As such hydroxyl-containing compounds, specific examples include: 1,2- Hydroquinone, alizarin, 1,5-dihydroxyanthraquinone, tannin, gallic acid, methyl gallate and pyrogallol.

The thickness of the die bonding film 10 is preferably at least 40 μm, more preferably at least 60 μm, and more preferably at least 80 μm. In addition, the thickness of the die bonding film is preferably not more than 200 μm, more preferably not more than 160 μm, more preferably not more than 120 μm.

Regarding the die bonding film 10, the yield point strength of the die bonding film test piece with a width of 10 mm was 15 in the tensile test under the conditions of the initial chuck distance of 10 mm, 23°C and the tensile speed of 300 mm/min. N or less, preferably 12 N or less, more preferably 10 N or less. At the same time, the breaking strength of the die bonding film 10 under the same test is less than 15 N, preferably less than 12 N, more preferably less than 10 N. At the same time, the elongation at break of the die bonding film 10 under the same test is 40-400%, preferably 40-350%, more preferably 40-300%. These yield point strength, breaking strength, and breaking elongation can be measured using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). In addition, the yield point strength, breaking strength and elongation at break of the die bonding film 10 can be adjusted by controlling the amount of inorganic filler and/or organic filler in the die bonding film 10, or the above-mentioned acrylic acid in the die bonding film 10 It is carried out by controlling the glass transition temperature of the resin, etc.

The viscosity of the die bonding film 10 at 120° C. in an uncured state is preferably at least 300 Pa·s, more preferably at least 700 Pa·s, and more preferably at least 1000 Pa·s. In addition, the viscosity of the die bonding film 10 at 120° C. in an uncured state is preferably 5000 Pa·s or less, more preferably 4500 Pa·s or less, more preferably 4000 Pa·s or less.

In the peeling test of the above-mentioned die bonding film 10 at a temperature of 23°C, a peeling angle of 180°, and a tensile speed of 300 mm/min, relative to the SUS (Steel Use Stainless, Japanese Stainless Steel Standard) plane, it shows, for example, 0.3～ 180° peel adhesion of 20 N/10 mm. Such a configuration is suitable for ensuring workpiece retention by the dicing die bonding film X or its die bonding film 10 .

The substrate 21 of the dicing tape 20 in the die bonding film X is an element that functions as a support in the dicing tape 20 or the die bonding film X. The substrate 21 is, for example, a plastic substrate, and a plastic film can be preferably used as the plastic substrate. As the constituent material of the plastic base material, for example, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, polyamide, etc. Aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, aromatic polyamide, fluororesin, cellulose resin and silicone resin. Examples of polyolefins include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homogeneous Polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene-butylene ethylene copolymers and ethylene-hexene copolymers. As polyester, polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate are mentioned, for example. The base material 21 may contain one material, or two or more materials. The base material 21 may have a single-layer structure or may have a multi-layer structure. When the adhesive layer 22 on the base material 21 is ultraviolet curable as described below, the base material 21 preferably has ultraviolet light permeability. In addition, when the base material 21 includes a plastic film, it may be an unstretched film, a uniaxially stretched film, or a biaxially stretched film.

When the dicing tape 20 or the base material 21 is shrunk by, for example, partial heating during use of the die bonding film X, the base material 21 preferably has heat shrinkability. Also, when the base material 21 includes a plastic film, it is preferable that the base material 21 is a biaxially stretched film in order to realize isotropic heat shrinkability of the dicing tape 20 or the base material 21 . The thermal shrinkage rate of the dicing tape 20 or the base material 21 obtained through a heat treatment test conducted under the conditions of a heating temperature of 100°C and a heat treatment time of 60 seconds is preferably 2-30%, more preferably 2-25% , more preferably 3-20%, more preferably 5-20%. The thermal shrinkage rate refers to at least one of the thermal shrinkage rate in the so-called MD (Machine Direction, longitudinal) direction and the thermal shrinkage rate in the so-called TD (Transverse Direction, transverse) direction.

The surface of the substrate 21 on the side of the adhesive layer 22 may be subjected to physical treatment, chemical treatment or primer treatment for improving the adhesion with the adhesive layer 22 . Examples of physical treatments include corona treatment, plasma treatment, sand matte treatment, ozone exposure treatment, flame exposure treatment, high voltage electric shock exposure treatment, and ionizing radiation treatment. As chemical treatment, chromic acid treatment is mentioned, for example.

The thickness of the base material 21 is preferably 40 μm or more, more preferably at least 40 μm, from the viewpoint of securing the strength for the base material 21 to function as a support in the dicing tape 20 or the die bonding film X. It is 50 μm or more, more preferably 55 μm or more, more preferably 60 μm or more. Also, from the viewpoint of realizing moderate flexibility in the dicing tape 20 or the dicing die bonding film X, the thickness of the substrate 21 is preferably 200 μm or less, more preferably 180 μm or less, and more preferably 150 μm or less. μm or less.

The adhesive layer 22 of the dicing tape 20 contains an adhesive. The adhesive can be an adhesive that can deliberately reduce the adhesive force (adhesive force can be reduced) by external action during the use of the dicing die bonding film X, or it can be an adhesive used in the dicing die bonding film X. Adhesive with little or no reduction in adhesive force due to external effects during the use of crystal film X (adhesive with non-adhesive force reduction). As for the adhesive in the adhesive layer 22, which one of the adhesive force-reducible adhesive or the non-adhesive force-reducible adhesive is used, it is possible to singulate the semiconductor wafer singulated using the dicing die bonding film X. It can be selected appropriately according to the use state of the die-cutting die-bonding film X, such as the method or condition.

In the case of using an adhesive with reduced adhesive force as the adhesive in the adhesive layer 22, the state where the adhesive layer 22 exhibits a relatively high adhesive force can be used separately during the use of the dicing die bonding film X And the state showing relatively low adhesion. For example, when the dicing die bonding film X is used in the expansion step described below, in order to suppress and prevent the die bonding film 10 from rising or peeling off from the adhesive layer 22, the high adhesive force state of the adhesive layer 22 is utilized. On the other hand, here Afterwards, in the following pick-up step for picking up the semiconductor wafer with the sticky film from the dicing tape 20 of the die sticky film X, in order to easily pick up the semiconductor wafer with the sticky film from the adhesive layer 22, it is possible to The low adhesive force state of the adhesive layer 22 is utilized.

As such an adhesive with reduced adhesive force, for example, an adhesive that can be cured by irradiation with radiation (radiation curable adhesive) or a thermally foamable adhesive during use of the dicing die bonding film X can be cited. wait. In the adhesive layer 22 of this embodiment, one type of adhesive with reduced adhesive force may be used, or two or more types of adhesive with reduced adhesive force may be used. In addition, the entire adhesive layer 22 may be formed with a reduced-adhesive adhesive, or a part of the adhesive layer 22 may be formed with a reduced-adhesive adhesive. For example, when the adhesive layer 22 has a single-layer structure, the entirety of the adhesive layer 22 may be formed from an adhesive with reduced adhesive force, or a specific portion of the adhesive layer 22 may be formed from an adhesive with reduced adhesive force ( For example, the central area of the bonding target area of the workpiece), other parts (eg, the bonding target area of the ring frame, the area outside the central area) are formed with a non-adhesive adhesive. Also, when the adhesive layer 22 has a multilayer structure, all the layers constituting the multilayer structure may be formed with a reduced-adhesive adhesive, or some layers of the multilayer structure may be formed with a reduced-adhesive adhesive.

As the radiation-curable adhesive used for the adhesive layer 22, for example, an adhesive of a type hardened by irradiation with electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used particularly preferably. Adhesives of the type that harden by ultraviolet radiation (ultraviolet curable adhesives).

Examples of the radiation-curable adhesive used for the adhesive layer 22 include, for example, acrylic adhesives containing base polymers such as acrylic polymers and radiation-containing functional groups such as carbon-carbon double bonds having radiation polymerizability. Additive radiation-curable adhesive of polymerizable monomer component or oligomer component.

The above-mentioned acrylic polymer preferably contains the most monomer units derived from (meth)acrylate in terms of mass ratio. (Meth)acrylate as a monomer unit for forming an acrylic polymer, that is, (meth)acrylate as a constituent monomer of an acrylic polymer, for example, alkyl (meth)acrylate , cycloalkyl (meth)acrylate and aryl (meth)acrylate, and more specifically, the same (meth)acrylic resins as those described above for the acrylic resin used in the die bonding film 10 can be mentioned. base) acrylate. As a monomer constituting the acrylic polymer, one type of (meth)acrylate may be used, or two or more types of (meth)acrylate may be used. As a constituent monomer of the acrylic polymer, 2-ethylhexyl acrylate and lauryl acrylate are preferable. In addition, in terms of making the adhesive layer 22 appropriately express basic characteristics such as adhesion by (meth)acrylate, the ratio of (meth)acrylate in the entire monomer constituting the acrylic polymer is preferable. 40% by mass or more, more preferably 60% by mass or more.

The acrylic polymer may contain one or two or more other monomers that can be copolymerized with (meth)acrylate in the constituent monomers, for example, in order to modify the cohesive force or heat resistance. Examples of such monomers include: carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylic group-containing monomers, As for amide and acrylonitrile, more specifically, the same copolymerizable monomers as those described above for the acrylic resin used for the die bonding film 10 are exemplified.

The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth)acrylate in order to form a crosslinked structure in the polymer skeleton. Examples of such polyfunctional monomers include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, Neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate Acrylates, polyglycidyl(meth)acrylates, polyester(meth)acrylates and urethane(meth)acrylates. "(Meth)acrylate" means "acrylate" and/or "methacrylate". As a monomer constituting the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomer may be used. In terms of making the adhesive layer 22 properly express basic properties such as the adhesiveness of (meth)acrylate, the ratio of the polyfunctional monomer to the monomers constituting the acrylic polymer is preferably 40% by mass. % or less, more preferably less than 30% by mass.

Acrylic polymers can be obtained by polymerizing the raw material monomers used to form them. As a polymerization method, solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization are mentioned, for example. From the viewpoint of high cleanliness in the semiconductor device manufacturing method using the dicing tape 20 or the dicing adhesive film X, it is preferable to use the dicing tape 20 or the adhesive layer 22 in the dicing adhesive film X. Since there are few low-molecular-weight substances, the number-average molecular weight of the acrylic polymer is preferably at least 100,000, more preferably 200,000 to 3 million.

The adhesive layer 22 or the adhesive used to form it may contain an external crosslinking agent, for example, to increase the number average molecular weight of the base polymer such as acrylic polymer. Examples of the external crosslinking agent for forming a crosslinked structure by reacting with a base polymer such as an acrylic polymer include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents. The content of the external crosslinking agent in the adhesive layer 22 or the adhesive used to form it is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass relative to 100 parts by mass of the base polymer.

Examples of the radiation-polymerizable monomer components used to form radiation-curable adhesives include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, and pentaerythritol tri(meth)acrylate. base) acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate and 1,4-butanediol di(meth)acrylate . Examples of the radiation-polymerizable oligomer component used to form a radiation-curable adhesive include various types such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based. The oligomer preferably has a molecular weight of about 100 to 30,000. The total content of radiation-polymerizable monomer components or oligomer components in the radiation-curable adhesive is determined within the range that can appropriately reduce the adhesive force of the formed adhesive layer 22. 100 parts by mass of the polymer, preferably 5 to 500 parts by mass, more preferably 40 to 150 parts by mass. Also, as an additive type radiation-curable adhesive, for example, one disclosed in Japanese Patent Application Laid-Open No. Sho 60-196956 can be used.

Examples of the radiation-curable adhesive used in the adhesive layer 22 include, for example, functional groups such as carbon-carbon double bonds that are contained in polymer side chains or polymer main chains, and have radiation polymerizable carbon-carbon double bonds at the end of the polymer main chain. Intrinsic radiation-curable adhesive based on the base polymer. Such an intrinsic radiation-curable adhesive is suitable in suppressing unexpected temporal changes in adhesive properties due to movement of low-molecular-weight components in the formed adhesive layer 22 .

As the base polymer contained in the intrinsic radiation-curable adhesive, one having an acrylic polymer as the basic skeleton is preferable. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer can be used. As a method of introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a method of obtaining an acrylic polymer by copolymerizing a raw material monomer containing a monomer having a specific functional group (first functional group) After polymerizing, radiation polymerization of a compound having a specific functional group (second functional group) capable of reacting with the first functional group (second functional group) and a radiation-polymerizable carbon-carbon double bond while maintaining the carbon-carbon double bond Condensation reaction or addition reaction of acrylic polymer in a neutral state.

Examples of combinations of the first functional group and the second functional group include carboxyl and epoxy, epoxy and carboxyl, carboxyl and aziridinyl, aziridinyl and carboxyl, hydroxyl and isocyanate, Isocyanate and hydroxyl groups. Among these combinations, a combination of a hydroxyl group and an isocyanato group or a combination of an isocyanato group and a hydroxyl group is preferable from the viewpoint of easiness of reaction tracing. Moreover, it is technically difficult to produce a polymer having a highly reactive isocyanate group, so from the viewpoint of the ease of production or acquisition of the acrylic polymer, the above-mentioned acrylic polymer is more preferable. A case where the first functional group is a hydroxyl group and the second functional group is an isocyanate group. In this case, as an isocyanate compound having both a radiation-polymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, an isocyanate compound containing a radiation-polymerizable unsaturated functional group, for example: Acryl isocyanate, 2-methacryloxyethyl isocyanate (MOI) and m-isopropenyl-α,α-dimethylbenzyl isocyanate.

系化合物、樟腦醌、鹵代酮、醯基膦氧化物及醯基磷酸酯。作為α-酮醇系化合物，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮及1-羥基環己基苯基酮。作為苯乙酮系化合物，例如可列舉：甲氧基苯乙酮、2,2-二甲氧基-1,2-二苯基乙烷-1-酮、2,2-二乙氧基苯乙酮及2-甲基-1-[4-(甲硫基)-苯基]-2-𠰌啉基丙烷-1-酮。作為安息香醚系化合物，例如可列舉：安息香乙醚、安息香異丙醚及茴香偶姻甲醚。作為縮酮系化合物，例如可列舉：苯偶醯二甲基縮酮。作為芳香族磺醯氯系化合物，例如可列舉：2-萘磺醯氯。作為光活性肟系化合物，例如可列舉：1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟。作為二苯甲酮系化合物，例如可列舉：二苯甲酮、苯甲醯苯甲酸及3,3'-二甲基-4-甲氧基二苯甲酮。作為9-氧硫𠮿

系化合物，例如可列舉：9-氧硫𠮿

、2-氯-9-氧硫𠮿

、2-甲基-9-氧硫𠮿

、2,4-二甲基-9-氧硫𠮿

、異丙基-9-氧硫𠮿

、2,4-二氯-9-氧硫𠮿

、2,4-二乙基-9-氧硫𠮿

及2,4-二異丙基-9-氧硫𠮿

。黏著劑層22中之放射線硬化性黏著劑中之光聚合起始劑之含量相對於丙烯酸系聚合物等基礎聚合物100質量份例如為0.05～20質量份。The radiation curable adhesive used for the adhesive layer 22 preferably contains a photopolymerization initiator. Examples of photopolymerization initiators include α-ketol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, aromatic sulfonyl chloride-based compounds, photoactive oxime-based compounds, diphenyl Methyl ketone series compounds, 9-oxosulfur 𠮿

Compounds, camphorquinones, halogenated ketones, acyl phosphine oxides and acyl phosphates. Examples of α-ketol compounds include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylphenethyl Ketones, 2-methyl-2-hydroxypropiophenone and 1-hydroxycyclohexyl phenylketone. Examples of acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethan-1-one, 2,2-diethoxybenzene Ethanone and 2-methyl-1-[4-(methylthio)-phenyl]-2-?olinylpropan-1-one. Examples of the benzoin ether-based compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. As a ketal compound, benzoyl dimethyl ketal is mentioned, for example. As an aromatic sulfonyl chloride type compound, 2-naphthalenesulfonyl chloride is mentioned, for example. As a photoactive oxime compound, 1-phenyl-1, 2-propanedione-2-(O-ethoxycarbonyl) oxime is mentioned, for example. Examples of the benzophenone-based compound include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. as 9-oxosulfur

series compounds, such as: 9-oxosulfur

, 2-Chloro-9-oxosulfur

, 2-methyl-9-oxosulfur 𠮿

, 2,4-Dimethyl-9-oxosulfur 𠮿

, Isopropyl-9-oxosulfur

, 2,4-dichloro-9-oxosulfur

, 2,4-Diethyl-9-oxothio𠮿

and 2,4-diisopropyl-9-oxosulfur

. The content of the photopolymerization initiator in the radiation curable adhesive in the adhesive layer 22 is, for example, 0.05 to 20 parts by mass relative to 100 parts by mass of base polymers such as acrylic polymers.

The heat-foamable adhesive used for the adhesive layer 22 is an adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of thermally expandable microspheres include microspheres in which a substance that is easily vaporized and expanded by heating is enclosed in a shell. Examples of inorganic foaming agents include ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium borohydride, and azides. Examples of organic blowing agents include: chlorofluoroalkanes such as trichloromonofluoromethane and dichloromonofluoromethane; Department of compounds; p-toluenesulfonylhydrazine or diphenylsulfonyl-3,3'-disulfonylhydrazine, 4,4'-oxybis(benzenesulfonylhydrazine), allylbis(sulfonylhydrazine) and other hydrazines Compounds; semicarbazide compounds such as p-tolylsulfonyl semicarbazide or 4,4'-oxybis(benzenesulfonyl semicarbazide); 5-thiol-1,2,3,4 -Triazole compounds such as thiotriazole and N,N'-dinitrosopentamethylenetetramine or N,N'-dimethyl-N,N'-dinitrosoterephthalamide N-nitroso compounds such as amines. Examples of substances that are easily vaporized and expanded by heating to form the thermally expandable microspheres described above include isobutane, propane, and pentane. Thermally expandable microspheres can be produced by encapsulating a substance that is easily vaporized and expanded by heating into a shell-forming substance by coagulation or interfacial polymerization. As the shell-forming substance, a substance exhibiting heat-fusibility or a substance that can be broken by thermal expansion of the encapsulating substance can be used. Examples of such substances include vinylidene chloride-acrylonitrile copolymers, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polyvinyl chloride.

Examples of the aforementioned non-adhesive-reducing adhesives include, for example, adhesives in a form in which the radiation-curable adhesives described above regarding the adhesive-reducible adhesives are hardened by irradiation with radiation, or pressure-sensitive adhesives. Adhesives etc. According to the type and content of the polymer component contained in the radiation-curable adhesive, even when the adhesive force is reduced by radiation hardening, it can also show the adhesiveness produced by the polymer component, and can be used in a specific state of use. It can be used to adhere and maintain the adhesive force of the adherend. In the adhesive layer 22 of the present embodiment, one type of non-adhesive force-reducing adhesive may be used, or two or more types of non-adhesive force-reducing adhesives may be used. In addition, the entire adhesive layer 22 may be formed with a non-adhesive force-reducing adhesive, or a part of the adhesive layer 22 may be formed with a non-adhesive force-reducing adhesive. For example, when the adhesive layer 22 has a single-layer structure, the entire adhesive layer 22 may be formed of a non-adhesive adhesive, or the adhesive layer 22 may be formed of a non-adhesive adhesive as described above. In specific parts (for example, the bonding target area of the ring frame, and the area outside the bonding target area of the wafer), other parts are formed by adhesive force-reducing adhesives (for example, as the bonding target area of the wafer) the central area of the target area). Also, when the adhesive layer 22 has a multilayer structure, all the layers constituting the multilayer structure may be formed of a non-adhesive adhesive, or some layers of the multilayer structure may be formed of a non-adhesive adhesive.

On the other hand, as the pressure-sensitive adhesive used for the adhesive layer 22 , for example, an acrylic adhesive or a rubber adhesive having an acrylic polymer as a base polymer can be used. When the adhesive layer 22 contains an acrylic adhesive as the pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic adhesive preferably contains (meth)acrylic acid derived from (meth)acrylic acid in a mass ratio. Esters have the most monomeric units. Examples of such acrylic polymers include the acrylic polymers described above regarding the radiation-curable adhesive.

The adhesive layer 22 or the adhesive used to form it may contain a crosslinking accelerator, an adhesion imparting agent, an anti-aging agent, a coloring agent such as a pigment or a dye, and the like in addition to the above-mentioned components. A colorant can be a compound that is colored by exposure to radiation. As such a compound, a leuco dye is mentioned, for example.

The thickness of the adhesive layer 22 is preferably 1-50 μm, more preferably 2-30 μm, more preferably 5-25 μm. Such a configuration is suitable, for example, in the case where the adhesive layer 22 contains a radiation-curable adhesive to achieve a balance of adhesive force of the adhesive layer 22 to the die-bonding film 10 before and after radiation curing.

The die-cut die-bonding film X having the above-mentioned constitution can be produced, for example, as follows.

In the production of the die bonding film 10 of the dicing die bonding film X, first, after preparing the adhesive composition for forming the die bonding film 10, the composition is coated on a specific spacer to form an adhesive composition layer . As the separator, for example, polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, and a release agent such as a fluorine-based release agent or acrylic long-chain alkyl ester-based release agent are listed. Coated plastic film or paper, etc. As a coating method of an adhesive composition, roll coating, screen coating, and gravure coating are mentioned, for example. Next, in the adhesive composition layer, it is dried by heating if necessary, and a crosslinking reaction is caused if necessary. The heating temperature is, for example, 70 to 160° C., and the heating time is, for example, 1 to 5 minutes. As described above, the above-mentioned die bonding film 10 can be produced in a form with a spacer attached.

The dicing tape 20 of the dicing die bonding film X can be produced by disposing the adhesive layer 22 on the prepared substrate 21 . For example, the base material 21 made of resin can be made by calendering film method, casting method in organic solvent, inflation extrusion method in closed system, T-die extrusion method, co-extrusion method, dry lamination method and other film-making methods. Specific surface treatment is performed on the film after film formation or the substrate 21 as needed. In forming the adhesive layer 22, for example, after preparing an adhesive composition for forming the adhesive layer, first, the composition is applied on the substrate 21 or on a specific separator to form an adhesive composition layer . As a coating method of an adhesive composition, roll coating, screen coating, and gravure coating are mentioned, for example. Next, in the adhesive composition layer, it is dried by heating if necessary, and a crosslinking reaction is caused if necessary. The heating temperature is, for example, 80 to 150° C., and the heating time is, for example, 0.5 to 5 minutes. When the adhesive layer 22 is formed on the separator, the adhesive layer 22 with the separator is bonded to the base material 21, and then the separator is peeled off. Thereby, the above-mentioned dicing tape 20 having a laminated structure of the base material 21 and the adhesive layer 22 was produced.

In the production of the die bonding film X, secondly, the die bonding film 10 is bonded to the adhesive layer 22 side of the die tape 20 by crimping, for example. The bonding temperature is, for example, 30 to 50°C, preferably 35 to 45°C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm, preferably 1 to 10 kgf/cm. When the adhesive layer 22 contains the radiation-curable adhesive as described above, the adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the bonding, or the adhesive may be irradiated from the substrate 21 side after the bonding. The layer 22 is irradiated with radiation such as ultraviolet rays. Alternatively, such radiation irradiation may not be performed during the manufacturing process of the dicing die bonding film X (in this case, the adhesive layer 22 may be radiation hardened during the use of the dicing die bonding film X). When the adhesive layer 22 is an ultraviolet curable adhesive layer, the amount of ultraviolet radiation used to harden the adhesive layer 22 is, for example, 50-500 mJ/cm ² , preferably 100-300 mJ/cm ² . The area (irradiated area R) where irradiation is performed as a measure for reducing the adhesion of the adhesive layer 22 in the dicing die bonding film X is, for example, as shown in FIG. The area other than its peripheral part.

The die-cut die-bonding film X can be produced in the same way as above. A spacer (not shown) may be provided on the dicing die bonding film X on the die bonding film 10 side to at least cover the die bonding film 10 . When the die bonding film 10 is smaller than the size of the adhesive layer 22 of the dicing tape 20 and there is an area in the adhesive layer 22 where the die bonding film 10 is not bonded, for example, the spacer can be at least covered with the die bonding film 10 And the form of the adhesive layer 22 is set. The spacer is used to protect the device so that at least the die attach film 10 or the adhesive layer 22 is not exposed, and when the dicing die attach film X is used, it is peeled off from the film.

2 to 8 show a semiconductor device manufacturing method according to an embodiment of the present invention.

In this semiconductor device manufacturing method, first, as shown in FIG. 2( a ) and FIG. 2( b ), dividing grooves 30 a are formed on the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are fabricated on the first surface Wa side of the semiconductor wafer W, and wiring structures (not shown) required for the semiconductor elements are formed on the first surface Wa. In this step, after bonding the wafer processing tape T1 having the adhesive surface T1a to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held by the wafer processing tape T1 and used. A rotary cutter such as a crystal cutting device forms a dividing groove 30a having a predetermined depth on the first surface Wa side of the semiconductor wafer W. The dividing groove 30 a is a gap for separating the semiconductor wafer W into semiconductor wafer units (the dividing groove 30 a is schematically represented by a thick solid line in FIGS. 2 to 4 ).

Next, as shown in FIG. 2( c), the bonding of the wafer processing tape T2 having the adhesive surface T2a on the first surface Wa side of the semiconductor wafer W, and the bonding of the wafer processing tape T1 from the semiconductor wafer W stripping.

Next, as shown in FIG. 2( d ), in a state where the semiconductor wafer W is held by the wafer processing tape T2, the semiconductor wafer W is ground to a specified thickness from the second surface Wb. thickness (wafer thinning step). Grinding can be performed using a grinding device equipped with a grinding stone. Through this wafer thinning step, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor wafers 31 is formed in this embodiment. Specifically, the semiconductor wafer 30A has a portion (connection portion) on the second surface Wb side that connects the portions singulated into a plurality of semiconductor wafers 31 . The thickness of the connecting portion of the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the end of the second surface Wb of the dividing groove 30a is, for example, 1 to 30 μm, preferably 3 to 20 μm. .

Next, as shown in FIG. 3( a ), the semiconductor wafer 30A held by the tape T2 for wafer processing is bonded to the die bonding film 10 of the dicing die bonding film X. Thereafter, as shown in FIG. 3( b ), the tape T2 for wafer processing is peeled off from the semiconductor wafer 30A. When the adhesive layer 22 of the dicing die bonding film X is a radiation curable adhesive layer, after the semiconductor wafer 30A is bonded to the die bonding film 10, the adhesive layer 22 can be irradiated with ultraviolet rays from the substrate 21 side. and other radiation, instead of the above-mentioned radiation exposure in the manufacturing process of the dicing die bonding film X. The irradiation dose is, for example, 50 to 500 mJ/cm ² , preferably 100 to 300 mJ/cm ² . In the dicing die bonding film X, the region where irradiation is performed as a measure for reducing the adhesion of the adhesive layer 22 (the irradiation region R shown in FIG. 1 ) is, for example, the removal of the adhesive layer 22 in the bonding region of the die bonding film 10 The area other than its periphery.

Next, after attaching the ring-shaped frame 41 on the die adhesive film 10 of the dicing die bonding film X, as shown in FIG. The holder 42.

Next, as shown in FIG. 4(b), the first expansion step (cold expansion step) is carried out under relatively low temperature conditions, the semiconductor wafer 30A is singulated into a plurality of semiconductor wafers 31, and the dicing die bonding film The die-bonding film 10 of X is cut into small pieces of die-bonding film 11 to obtain a semiconductor wafer 31 with a die-bonding film. In this step, the hollow cylinder-shaped lifting member 43 of the expansion device is brought into contact with the dicing belt 20 on the lower side of the dicing adhesive film X in the figure, and is lifted up so that the semiconductor wafer is bonded. The dicing tape 20 of the dicing die bonding film X of 30A expands so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is carried out under the condition that a tensile stress of, for example, 15-32 MPa is generated in the dicing tape 20 . The temperature condition of the cold expansion step is, for example, below 0°C, preferably -20 to -5°C, more preferably -15 to -5°C, more preferably -15°C. The expansion speed (speed at which the lifting member 43 rises) of the cold expansion step is, for example, 0.1 to 100 mm/sec. Also, the amount of expansion in the cold expansion step is, for example, 3 to 16 mm.

In this step, the semiconductor wafer 30A is divided into thin-walled and easy-to-break parts and separated into semiconductor wafers 31 . And, in this step, in the die adhesive film 10 that is in close contact with the adhesive layer 22 of the expanded dicing tape 20, deformation is suppressed in each area where each semiconductor wafer 31 is in close contact. In the portion facing the dividing groove between the wafers 31, the tensile stress generated by the dicing tape 20 acts in the state where such deformation suppression effect does not occur. As a result, the die-bonding film 10 is divided at the portion facing the dividing groove between the semiconductor wafers 31 . After this step, as shown in FIG. 4( c ), the jacking member 43 is lowered to release the expanded state of the crystal cutting tape 20 .

Next, as shown in FIG. 5( a ), the second expansion step is carried out under relatively high temperature conditions to widen the distance (separation distance) between the semiconductor wafers 31 to which the crystal film is attached. In this step, the hollow cylinder-shaped lifting member 43 included in the expansion device is raised again to expand the die-cutting tape 20 of the die-bonding film X. The temperature condition of the second expansion step is, for example, 10°C or higher, preferably 15 to 30°C. The expansion speed (speed at which the jacking member 43 rises) in the second expansion step is, for example, 0.1 to 10 mm/sec. Also, the amount of expansion in the second expansion step is, for example, 3 to 16 mm. In this step, the distance between the semiconductor wafers 31 adhered to the crystal film is widened to such an extent that the semiconductor wafers 31 adhered to the crystal film can be properly picked up from the dicing tape 20 by the pick-up step described below. After this step, as shown in FIG. 5( b ), the lifting member 43 is lowered to release the expanded state of the crystal cutting tape 20 . In terms of suppressing the separation distance between the semiconductor wafers 31 attached to the crystal film on the dicing tape 20 from shrinking after the expanded state is released, it is preferable to keep the semiconductor wafer 31 of the dicing tape 20 in the area before releasing the expanded state. The outer part is heated to shrink it.

Next, if necessary, after cleaning the semiconductor wafer 31 side of the dicing tape 20 of the semiconductor wafer 31 with the attached crystal film using a cleaning solution such as water, as shown in FIG. Wafer 31 is picked up from dicing tape 20 (pick-up step). For example, on the lower side of the figure of the crystal cutting belt 20, the pin member 44 of the pick-up mechanism is raised to lift up the semiconductor wafer 31 with the crystal film attached to the pick-up object through the crystal cutting belt 20, and the suction jig 45 And the adsorption keeps. In the pick-up step, the jacking speed of the pin member 44 is, for example, 1-100 mm/sec, and the jacking amount of the pin member 44 is, for example, 50-3000 μm.

Next, as shown in FIG. 7( a ) and FIG. 7( b ), the semiconductor wafer 31 with the crystal film attached is temporarily fixed on the mounting substrate 51 . This temporary fixation is performed in such a manner that the semiconductor chip 31 ′ etc. on the mounting substrate 51 is buried by the die-bonding film 11 attached to the semiconductor chip 31 . Examples of the mounting substrate 51 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring substrate. The semiconductor wafer 31 ′ is fixed on the mounting substrate 51 through the adhesive layer 52 . Electrode pads (not shown) of the semiconductor chip 31 ′ are electrically connected to terminal portions (not shown) of the mounting substrate 51 via bonding wires 53 . As the bonding wire 53, for example, a gold wire, an aluminum wire, or a copper wire can be used. In this step, the whole of the semiconductor chip 31 ′ mounted by wire bonding and the bonding wire 53 connected thereto is embedded in the die-bonding film 11 attached to the semiconductor chip 31 . In addition, in this step, in order to make the semiconductor wafer 31 ′ and the bonding wire 53 into a state where it is easy to push into the die bonding film 11 , the die bonding film 11 may be heated to soften it. The heating temperature is a temperature at which the die bonding film 11 does not reach a fully thermally hardened state, for example, 80-140°C.

Next, as shown in FIG. 7( c ), the die bonding film 11 is hardened by heating (thermal hardening step). In this step, the heating temperature is, for example, 100-200° C., and the heating time is, for example, 0.5-10 hours. By going through this step, an adhesive layer formed by thermosetting the die bonding film 11 is formed. This adhesive layer embeds the semiconductor chip 31 ′ (first semiconductor chip) mounted by wire bonding on the mounting substrate 51 together with the bonding wire 53 connected thereto, and bonds the semiconductor chip 31 on the mounting substrate 51 .

Next, as shown in FIG. 8( a ), the electrode pads (not shown) of the semiconductor chip 31 are electrically connected to the terminal portions (not shown) of the mounting substrate 51 via bonding wires 53 (wire bonding step). The connection between the electrode pads of the semiconductor chip 31 and the bonding wire 53 , and the connection between the terminal portion of the mounting substrate 51 and the bonding wire 53 are realized by ultrasonic welding with heating. The wire heating temperature in wire bonding is, for example, 80 to 250° C., and the heating time is, for example, several seconds to several minutes. Such a wire bonding step may be performed prior to the thermal hardening step described above.

Next, as shown in FIG. 8(b), a sealing resin 54 for sealing the semiconductor chip 31 and the like on the mounting substrate 51 is formed (sealing step). In this step, the sealing resin 54 is formed, for example, by transfer molding using a mold. As a constituent material of the sealing resin 54, epoxy-type resin is mentioned, for example. In this step, the heating temperature for forming the sealing resin 54 is, for example, 165-185° C., and the heating time is, for example, 60 seconds to several minutes. In the case where the sealing resin 54 is not sufficiently cured in this step, a post-curing step for completely curing the sealing resin 54 by further heat treatment is performed after this step. In the post-hardening step, the heating temperature is, for example, 165-185° C., and the heating time is, for example, 0.5-8 hours. Referring to FIG. 7( c ), even when the die bonding film 11 is not completely thermally cured in the above steps, the die bonding film 11 and the sealing resin 54 can be completely thermally cured together in the sealing step or the post-curing step.

As described above, it is possible to manufacture a semiconductor device in which a plurality of semiconductor chips are mounted in multiple stages. In this embodiment, the whole of the semiconductor chip 31 ′ and the bonding wire 52 connected thereto are embedded in the adhesive layer formed by hardening the die bonding film 11 . Alternatively, the semiconductor chip 31 ′ and a part of the semiconductor chip 31 ′ side of the bonding wire 52 connected thereto may be embedded in the adhesive layer formed by hardening the die bonding film 11 . In addition, in this embodiment, for example, as shown in FIG. 9 , instead of the semiconductor chip 31 ′ mounted by wire bonding, a flip-chip mounted semiconductor chip 31 ′ can be used. The semiconductor chip 31 ′ shown in FIG. 9 is electrically connected to the mounting substrate 51 through bumps 55 , and the space between the semiconductor chip 31 ′ and the mounting substrate 51 is filled with an underfill 56 and cured by heat. In the semiconductor device shown in FIG. 9 , the adhesive layer formed by thermosetting the die adhesive film 11 will embed the semiconductor chip 31 ′ (first semiconductor chip) mounted on the mounting substrate 51 and place it on the mounting substrate 51. A semiconductor wafer 31 (second semiconductor wafer) is bonded thereon.

10 and 11 show a part of steps of another embodiment of the semiconductor device manufacturing method of the present invention. In this embodiment, first, as shown in FIG. 10( a ) and FIG. 10( b ), temporarily fix the semiconductor chip 31 with the crystal film attached to the semiconductor chip 31 ′ mounted on the mounting substrate 51 by wire bonding. . The semiconductor wafer 31 ′ is fixed on the mounting substrate 51 through the adhesive layer 52 . Electrode pads (not shown) of the semiconductor chip 31 ′ are electrically connected to terminal portions (not shown) of the mounting substrate 51 through bonding wires 53 . In this step, the connection portion of the bonding wire 53 of the semiconductor chip 31 ′ thus mounted by wire bonding is covered with the die bonding film 11 , and a part of the bonding wire 53 is embedded in the die bonding film 11 . In addition, in this step, the die bonding film 11 may be heated and softened in order to make the bonding wire 53 easy to squeeze into the die bonding film 11 . The heating temperature is a temperature at which the die bonding film 11 does not reach a fully thermally hardened state, for example, 80-140°C.

Next, as shown in FIG. 10( c ), the die bonding film 11 is hardened by heating (thermal hardening step). In this step, the heating temperature is, for example, 100-200° C., and the heating time is, for example, 0.5-10 hours. By going through this step, an adhesive layer formed by thermosetting the die bonding film 11 is formed. The adhesive layer covers the connection portion of the bonding wire 53 of the semiconductor chip 31' mounted by wire bonding on the mounting substrate 51, embeds a part of the bonding wire 53 and bonds the semiconductor chip on the semiconductor chip 31' (first semiconductor chip). 31 (second semiconductor wafer).

Next, as shown in FIG. 11( a ), electrode pads (not shown) of the semiconductor chip 31 and terminal portions (not shown) of the mounting substrate 51 are electrically connected via bonding wires 53 (wire bonding step). The connection between the electrode pads of the semiconductor chip 31 and the bonding wire 53 , and the connection between the terminal portion of the mounting substrate 51 and the bonding wire 53 are realized by ultrasonic welding with heating. The wire heating temperature in wire bonding is, for example, 80 to 250° C., and the heating time is, for example, several seconds to several minutes. Such a wire bonding step may be performed before the above-mentioned thermal hardening step of this embodiment.

Next, as shown in FIG. 11(b), sealing resin 54 for sealing semiconductor chips 31, 31' and bonding wires 53 on mounting substrate 51 is formed (sealing step). In this step, the heating temperature for forming the sealing resin 54 is, for example, 165-185° C., and the heating time is, for example, 60 seconds to several minutes. In the case where the sealing resin 54 is not sufficiently cured in this step, a post-curing step for completely curing the sealing resin 54 by further heat treatment is performed after this step. In the post-hardening step, the heating temperature is, for example, 165-185° C., and the heating time is, for example, 0.5-8 hours. Referring to FIG. 10( c ), even when the die bonding film 11 is not completely thermally cured in the above steps, the die bonding film 11 and the sealing resin 54 can be completely thermally cured together in the sealing step or the post-hardening step.

As described above, it is possible to manufacture a semiconductor device in which a plurality of semiconductor chips are mounted in multiple stages.

In the semiconductor device manufacturing method of the present invention, the wafer thinning step shown in FIG. 12 may be performed instead of the wafer thinning step described above with reference to FIG. 2( d ). After the above process with reference to FIG. 2(c), in the wafer thinning step shown in FIG. The wafer is thinned to a predetermined thickness by grinding, and a semiconductor wafer split body 30B including a plurality of semiconductor wafers 31 and held by the wafer processing tape T2 is formed. In this step, the method (first method) of grinding the wafer until the dividing groove 30a itself is exposed on the second surface Wb side may be used, or the method of grinding the wafer from the second surface Wb side may be used. Until the division groove 30a is about to be reached, thereafter, by the action of the pressing force of the spinning grindstone on the wafer, a crack is generated between the division groove 30a and the second surface Wb to form a semiconductor wafer division body 30B (the second method ). Depending on the method adopted, the depth of the dividing groove 30a formed as described above with reference to FIG. 2(a) and FIG. 2(b) from the first surface Wa is appropriately determined. In FIG. 12, the dividing groove 30a passed through the first method or the dividing groove 30a passed through the second method and the cracks connected thereto are schematically shown by thick solid lines. The above steps can be performed with reference to FIGS. 3 to 6 after bonding the semiconductor wafer divided body 30B produced in this way to the die bonding film X instead of the semiconductor wafer 30A.

13( a ) and FIG. 13( b ) specifically show the first expanding step (cold expanding step) performed after the semiconductor wafer divided body 30B is bonded to the die bonding film X. In this step, the hollow cylinder-shaped lifting member 43 of the expansion device is brought into contact with the dicing belt 20 on the lower side of the dicing adhesive film X in the figure, and is lifted up so that the semiconductor wafer is bonded. The dicing tape 20 of the die bonding film X of 30B expands so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer split body 30B. This expansion is carried out under the condition that a tensile stress of, for example, 1-100 MPa is generated in the dicing tape 20 . The temperature condition of this step is, for example, below 0°C, preferably -20 to -5°C, more preferably -15 to -5°C, more preferably -15°C. The expansion speed of this step (the speed at which the jacking member 43 rises) is, for example, 1 to 500 mm/sec. Also, the amount of expansion in this step is, for example, 50 to 200 mm. Through this cold expansion step, the die bonding film 10 of the dicing die bonding film X is cut into small pieces of the die bonding film 11 to obtain a die bonding semiconductor wafer 31 . Specifically, in this step, in the die adhesive film 10 that is in close contact with the adhesive layer 22 of the expanded dicing tape 20, deformation can be achieved in each area where the semiconductor wafers 31 of the semiconductor wafer split body 30B are in close contact. Suppression, on the other hand, in the portion facing the dividing groove 30a between the semiconductor wafers 31, the tensile stress generated by the dicing tape 20 acts in a state where such a deformation suppression effect does not occur. As a result, the portion of the die bonding film 10 facing the dividing groove 30 a between the semiconductor wafers 31 is cut. The thus-obtained semiconductor wafer 31 with attached crystal film is supplied to the mounting step in the semiconductor device manufacturing process after the above-mentioned picking-up step with reference to FIG. 6 .

In the semiconductor device manufacturing method of the present invention, instead of attaching the semiconductor wafer 30A or the semiconductor wafer divided body 30B to the dicing adhesive film X, the semiconductor wafer 30C produced in the following manner can be attached to the die bonding film X. The above-mentioned composition of the crystal film X.

In manufacturing the semiconductor wafer 30C, first, as shown in FIG. 14( a ) and FIG. 14( b ), a modified region 30 b is formed in the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are fabricated on the first surface Wa side of the semiconductor wafer W, and wiring structures (not shown) necessary for the semiconductor elements are formed on the first surface Wa. In this step, after bonding the wafer processing tape T3 having the adhesive surface T3a to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held by the wafer processing tape T3, and the The laser beam focused on the inside of the wafer is irradiated from the opposite side of the wafer processing tape T3 to the semiconductor wafer W along its planned dividing line, and the semiconductor wafer W is irradiated by ablation using multiphoton absorption. A modified region 30b is formed. The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor wafer units. Regarding the method of forming the modified region 30b on the planned division line by irradiation of laser light in the semiconductor wafer, for example, Japanese Patent Laid-Open No. 2002-192370 has described in detail, but the laser light irradiation conditions of this embodiment For example, adjust appropriately within the scope of the following conditions. <Laser light irradiation conditions> (A) Laser light Laser light source Semiconductor laser excitation Nd:YAG laser wavelength 1064 nm Laser spot cross-sectional area 3.14×10 ^-8 cm ² Oscillation form Q switch pulse repetition frequency 100 kHz or less Pulse width 1 μs or less output 1 mJ or less laser light quality TEM00 Polarization characteristics Linear polarized light (B) condensing lens magnification 100 times or less NA 0.55 Transmittance to laser light wavelength 100% or less (C) For the stage for mounting semiconductor substrates Moving speed below 280 mm/s

Next, in the state where the semiconductor wafer W is held by the wafer processing tape T3, the semiconductor wafer W is ground from the second surface Wb to make it thinner to a specific thickness, thereby, as shown in FIG. 14(c) As shown, a semiconductor wafer 30C that can be singulated into a plurality of semiconductor wafers 31 is formed (wafer thinning step). After the semiconductor wafer 30C produced in the above manner is attached to the die bonding film X instead of the semiconductor wafer 30A, the above-mentioned steps are performed with reference to FIGS. 3 to 6 .

15( a ) and FIG. 15( b ) specifically show the first expansion step (cold expansion step) performed after bonding the semiconductor wafer 30C to the dicing die attach film X. In this step, the hollow cylinder-shaped lifting member 43 of the expansion device is brought into contact with the dicing belt 20 on the lower side of the dicing adhesive film X in the figure, and is lifted up so that the semiconductor wafer is bonded. The dicing tape 20 of the dicing die attach film X of 30C expands so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expansion is carried out under the condition that a tensile stress of, for example, 1-100 MPa is generated in the dicing tape 20 . The temperature condition of this step is, for example, below 0°C, preferably -20 to -5°C, more preferably -15 to -5°C, more preferably -15°C. The expansion speed of this step (the speed at which the jacking member 43 rises) is, for example, 1 to 500 mm/sec. Also, the amount of expansion in this step is, for example, 50 to 200 mm. Through this cold expansion step, the die bonding film 10 of the dicing die bonding film X is cut into small pieces of the die bonding film 11 to obtain a die bonding semiconductor wafer 31 . Specifically, in this step, cracks are formed in the fragile reformed region 30b of the semiconductor wafer 30C, and the semiconductor wafer 31 is singulated into pieces. At the same time, in this step, in the die adhesive film 10 that is in close contact with the adhesive layer 22 of the expanded dicing tape 20, deformation is suppressed in each area where each semiconductor chip 31 of the semiconductor wafer 30C is in close contact, On the other hand, the tensile stress generated by the dicing tape 20 acts on the portion facing the crack formation portion of the wafer in a state where such a deformation suppression effect does not occur. As a result, the portion of the die bonding film 10 that faces the crack formation portion between the semiconductor wafers 31 is cut off. The thus-obtained semiconductor wafer 31 with attached crystal film is supplied to the mounting step in the semiconductor device manufacturing process after the above-mentioned picking-up step with reference to FIG. 6 .

The inventors of the present invention found that, for example, for the die bonding film 10 in the die bonding film X that can be used in the above semiconductor device manufacturing process, the die bonding film test piece with a width of 10 mm is placed between the initial chucks. In the tensile test conducted at a distance of 10 mm, 23°C and a tensile speed of 300 mm/min, the strength at the yield point is 15 N or less, the breaking strength is 15 N or less, and the elongation at break is 40 to 400%. The configuration is suitable in that, even when the die bonding film 10 is relatively thick, the die bonding film 10 in the expanding step can be cut at the part to be cut and suppressed from the dicing tape 20. splash. For example, as shown in the following Examples and Comparative Examples.

It is considered that the elongation at break of the die bonding film 10 in the above tensile test is 40 to 400%, preferably 40 to 350%, and more preferably 40 to 300% in the following aspects: the expansion step for cutting In this way, the stretching length for cutting the die bonding film 10 is prevented from being too large, and the die bonding film 10 is prone to ductile failure rather than brittle failure. The easier the die bond film is to undergo ductile failure, the easier it is for the stress for cutting to be transmitted to the part where the film is to be cut in the expanding step for cutting.

It is considered that the yield point strength of the die bonding film 10 in the above tensile test is 15 N or less, preferably 12 N or less, more preferably 10 N or less, and the breaking strength in the same tensile test is 15 N or less, preferably The above-mentioned constitution of 12 N or less, more preferably 10 N or less is preferable in order to suppress the strain energy accumulated inside the film during the elongation process and fracture process of the die bonding film 10 in the expanding step for severing. In the expansion step for cutting, the smaller the internal accumulated strain energy during the elongation process and the fracture process, the more difficult it is for the die bonding film to break in its exposed area (area not covered by the workpiece) and cause the film to splash.

As described above, the die bonding film 10 is suitable for realizing good dicing and suppressing spattering when used in the spreading step for dicing in a state of being in close contact with the adhesive layer 22 side of the dicing tape 20 . In addition, the dicing die bonding film X is suitable for achieving good dicing in the die bonding film 10 and suppressing spatter when used in the spreading step for dicing.

As mentioned above, the thickness of the die bonding film 10 is preferably at least 40 μm, more preferably at least 60 μm, and more preferably at least 80 μm. Such a configuration is suitable for using the die bonding film 10 as an adhesive film for semiconductor wafer embedding or as an adhesive film for bonding semiconductor wafers with partial embedding of bonding wires. Also, the thickness of the die bonding film 10 is preferably not more than 200 μm, more preferably not more than 160 μm, and more preferably not more than 120 μm. Such a configuration is preferable in that the yield point strength, breaking strength, and elongation at break of the die bonding film 10 are prevented from becoming too large, and the yield point strength in the above-mentioned tensile test is 15 N or less, and the breaking strength is 15 N. Below, and the elongation at break is 40 to 400% of the above-mentioned constitution.

The viscosity at 120° C. of the unhardened state of the die bonding film 10 is as described above, and is preferably 300 Pa·s or higher, more preferably 700 Pa·s or higher, and more preferably 1000 Pa·s or higher. The viscosity of the die bonding film 10 at 120° C. in an uncured state is preferably not more than 5000 Pa·s, more preferably not more than 4500 Pa·s, more preferably not more than 4000 Pa·s. These configurations related to the viscosity or softness of the unhardened state of the die-bonding film 10 are suitable for use of the die-bonding film 10 as an adhesive film for semiconductor chip embedding or for partially embedding semiconductors with bonding wires. Adhesive film for wafer-to-wafer bonding.

When the die bonding film 10 contains an inorganic filler, the content of the inorganic filler is as described above, preferably at least 10% by mass, more preferably at least 20% by mass, more preferably at least 30% by mass. Also, the same content is preferably at most 50% by mass, more preferably at most 45% by mass, more preferably at most 40% by mass. As the content of the inorganic filler in the film for forming the adhesive layer increases, the elongation at break of the film tends to decrease and the strength of the drop point increases. Therefore, the composition related to the content of the inorganic filler in the die bonding film 10 It is suitable for suppressing the above-mentioned phenomenon that the film is splashed due to fracture in the exposed area (area not covered by the workpiece) of the die bonding film 10 .

The die bond film 10 preferably contains an organic filler, and the content of the organic filler in the die bond film 10 is preferably at least 2% by mass, more preferably at least 5% by mass, and more preferably at least 8% by mass. Also, when the die bonding film 10 contains an organic filler, the content thereof is preferably at most 20% by mass, more preferably at most 17% by mass, more preferably at most 15% by mass. This configuration related to the content of the organic filler in the die bonding film 10 is suitable for controlling the yield point strength and breaking strength of the die bonding film 10 within appropriate ranges.

The die attach film 10 preferably contains an acrylic resin with a glass transition temperature of -40-10°C. Such a configuration is suitable for realizing the above-mentioned configuration in which the yield point strength in the above-mentioned tensile test of the die-bonding film 10 is 15 N or less. [Example]

[Example 1] <Preparation of DAF> Acrylic resin A ₁ (trade name "Teisan Resin SG-708-6", weight average molecular weight of 700,000, glass transition temperature Tg of 4°C, Nagase chemteX Co., Ltd.) 18 parts by mass, epoxy resin (trade name "KI-3000-4", manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 28 parts by mass, phenol resin (trade name "LVR8210-DL", group Sakae Chemical Industry Co., Ltd.) 14 parts by mass, inorganic filler (trade name "SE-2050MC", silicon dioxide, average particle size of 0.5 μm, manufactured by Admatechs Co., Ltd.) 40 parts by mass, and as a hardening catalyst 0.1 part by mass of an organic catalyst (trade name "TPP-MK", manufactured by Beixing Chemical Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition. Next, using an applicator, the adhesive composition was applied to the silicone release-treated surface of a PET separator (thickness 38 μm) having a silicone release-treated surface to form an adhesive composition layer. Next, the composition layer was heated and dried at 130° C. for 2 minutes, and a 100 μm thick die-bonding film of Example 1 was formed on the PET spacer. The composition of the crystal adhesion film in Example 1 and the following examples and comparative examples is disclosed in Table 1 (in Table 1, the unit of each numerical value representing the composition of the crystal adhesion film is the relative "parts by mass" within the composition ").

<Manufacturing of crystal dicing tape> In a reaction vessel equipped with a cooling pipe, a nitrogen gas introduction pipe, a thermometer and a stirring device, 86.4 parts by mass of 2-ethylhexyl acrylate and 13.6 parts by mass of 2-hydroxyethyl acrylate were prepared as a polymerized A mixture of 0.2 parts by mass of benzoyl peroxide as an initiator and 65 parts by mass of toluene as a polymerization solvent was stirred at 61° C. in a nitrogen atmosphere for 6 hours (polymerization reaction). Thereby, a polymer solution containing the acrylic polymer _P1 was obtained. Next, the polymer solution containing the acrylic polymer _P1 , 2-methacryloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst were mixed in Stir at 50° C. in air for 48 hours (addition reaction). In this reaction solution, the compounded amount of MOI was 14.6 parts by mass relative to 100 parts by mass of the above-mentioned acrylic polymer _P1 , and the compounded amount of dibutyltin dilaurate was 0.5 parts by mass relative to 100 parts by mass of the acrylic polymer _P1 . . By this addition reaction, the polymer solution containing the acrylic polymer _P2 which has a methacrylate group in a side chain was obtained. Next, to this polymer solution, ₂ parts by mass of polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., Ltd.) and 5 parts by mass of photopolymerizable An initiator (trade name "Irgacure 651", manufactured by BASF Corporation) was mixed to obtain an adhesive composition. Next, using an applicator, the adhesive composition was applied to the silicone release-treated surface of a PET separator (thickness 38 μm) having a silicone release-treated surface to form an adhesive composition layer. Next, the composition layer was heated and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm on the PET separator. Next, a substrate made of ethylene-vinyl acetate copolymer (EVA) (trade name "Funcrare NRB#115", thickness 115 μm, Gunze Co., Ltd.). Crystal cutting tapes were made in the above manner.

<Manufacturing of die-cutting die-bonding film> Die-cutting the above-mentioned die-bonding film of Example 1 with a PET spacer into a circle with a diameter of 330 mm. Next, after peeling off the PET spacer from the die-bonding film and peeling the PET spacer from the above-mentioned dicing tape, use a roller laminating machine to bond the adhesive layer exposed in the dicing tape with the PET spacer in the die-bonding film. The face is peeled off and exposed. In this bonding, the bonding speed was 10 mm/min, the temperature condition was 40° C., and the pressure condition was 0.15 MPa. Next, the die-cutting tape bonded to the die-adhesive film was die-cut into a circle with a diameter of 390 mm in such a way that the center of the die-cut tape coincided with the center of the die-adhesive film. Next, irradiate the adhesive layer of the dicing tape with ultraviolet light from the side of the EVA substrate. In ultraviolet irradiation, a high-pressure mercury lamp was used, and the cumulative light intensity of irradiation was 400 mJ/cm ² . In the above manner, the die-cut die-bonding film of Example 1 having a laminated structure including a die-cutting tape and a die-bonding film was produced.

[Example 2] Instead of using 18 parts by mass of acrylic resin _A2 (trade name "Teisan Resin SG-70L", weight average molecular weight of 900,000, glass transition temperature Tg of -13°C, manufactured by Nagase ChemteX Co., Ltd.) Except acrylic resin A ₁ 18 parts by mass, the die-bonding film of Example 2 (thickness 100 μm) was produced in the same manner as the die-bonding film of Example 1. Also, the die-cutting die-bonding film of Example 2 was produced in the same manner as the die-cutting die-bonding film of Example 1, except that the die-bonding film of Example 2 was used instead of the above-mentioned die-bonding film of Example 1.

[Example 3] Instead of using 18 parts by mass of acrylic resin _A3 (trade name "Teisan Resin SG-280", weight average molecular weight of 900,000, glass transition temperature Tg of -29°C, manufactured by Nagase ChemteX Co., Ltd.) Except acrylic resin A ₁ 18 parts by mass, the die-bonding film of Example 3 (thickness 100 μm) was produced in the same manner as the die-bonding film of Example 1. Also, the die-cut die-bonding film of Example 3 was produced in the same manner as the die-cutting die-bonding film of Example 1, except that the die-bonding film of Example 3 was used instead of the above-mentioned die-bonding film of Example 1.

[Example 4] Instead of using 18 parts by _mass of acrylic resin A ₂ (trade name "Teisan Resin SG-70L", manufactured by Nagase ChemteX Co., Ltd.), epoxy resin (trade name "KI-3000-4", manufactured by Nippon Steel & Sumitomo Metal Chemicals Co., Ltd.) was set at 22 parts by mass instead of 28 parts by mass. manufacturing) was set to 10 parts by mass instead of 14 parts by mass, and the compounded amount of inorganic filler (trade name "SE-2050MC", manufactured by Admatechs Co., Ltd.) was set to 50 parts by mass instead of 40 parts by mass, in order to match with In the same manner as the die-bonding film of Example 1, the die-bonding film of Example 4 (thickness 100 μm) was fabricated. Also, the die-cut die-bonding film of Example 4 was produced in the same manner as the die-cutting die-bonding film of Example 1, except that the die-bonding film of Example 4 was used instead of the above-mentioned die-bonding film of Example 1.

[Example 5] In addition to setting the blending amount of the inorganic filler (trade name "SE-2050MC", manufactured by Admatechs Co., Ltd.) to 30 parts by mass instead of 40 parts by mass, and then deploying an organic filler (trade name "Art Pearl J- 4PY", polymethyl methacrylate (PMMA), Manufactured by Negami Industry Co., Ltd.) 10 parts by mass, in the same manner as the die-bonding film of Example 1, the die-bonding film of Example 5 (thickness 100 μm ). Also, the die-cutting die-bonding film of Example 5 was produced in the same manner as the die-cutting die-bonding film of Example 1, except that the die-bonding film of Example 5 was used instead of the above-mentioned die-bonding film of Example 1.

[Example 6] Instead of using 18 parts by mass of acrylic _resin A ₃ (trade name "Teisan Resin SG-280", manufactured by Nagase ChemteX Co., Ltd.), an inorganic filler (trade name "SE-2050MC", manufactured by Admatechs Co., Ltd.), the blending amount was set to 30 parts by mass instead of 40 parts by mass, and an organic filler (trade name "Art Pearl J-4PY", polymethyl methacrylate (PMMA), Negami Industry Co., Ltd.) was produced in the same manner as the die-bonding film of Example 1 except for 10 parts by mass of the die-bonding film of Example 6 (thickness: 100 μm). Also, the die-cutting die-bonding film of Example 6 was produced in the same manner as the die-cutting die-bonding film of Example 1, except that the die-bonding film of Example 6 was used instead of the above-mentioned die-bonding film of Example 1.

[Example 7] In addition to using 18 parts by mass of acrylic resin A ₃ (trade name "Teisan Resin SG-280", manufactured by Nagase ChemteX Co., Ltd.) instead of 18 parts by mass of acrylic resin A ₁ , an inorganic filler (trade name "SE-2050MC", manufactured by Admatechs Co., Ltd.), the blending amount is set to 30 parts by mass instead of 40 parts by mass, and then an organic filler (trade name "Art Pearl J-4PY", polymethyl methacrylate (PMMA), Negami Industry Co., Ltd.) 10 parts by mass, and the thickness was changed to 200 μm instead of 100 μm, and the die-bonding film of Example 7 was produced in the same manner as the die-bonding film of Example 1. Also, the die-cut die-bonding film of Example 7 was produced in the same manner as the die-cutting die-bonding film of Example 1, except that the die-bonding film of Example 7 was used instead of the above-mentioned die-bonding film of Example 1.

[Comparative Example 1] Except that the compounding amount of epoxy resin (trade name "KI-3000-4", manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd.) was 22 parts by mass instead of 28 parts by mass, phenol resin (trade name "LVR8210-DL", manufactured by Qunyei Chemical Industry Co., Ltd.) was set to 10 parts by mass instead of 14 parts by mass, and the blended amount of inorganic filler (trade name "SE-2050MC", manufactured by Admatechs Co., Ltd.) Except that 50 mass parts was used instead of 40 mass parts, the die-bonding film of Comparative Example 1 (thickness 100 μm) was produced in the same manner as the die-bonding film of Example 1. Also, the die-cut die-bonding film of Comparative Example 1 was produced in the same manner as the die-cutting die-bonding film of Example 1, except that the die-bonding film of Comparative Example 1 was used instead of the above-mentioned die-bonding film of Example 1.

[Comparative Example 2] In addition to using 24 parts by mass of acrylic resin A ₂ (trade name "Teisan Resin SG-70L", manufactured by Nagase ChemteX Co., Ltd.) instead of 18 parts by mass of acrylic resin A ₁ , epoxy resin (trade name "KI-3000-4", manufactured by Nippon Steel & Sumitomo Metal Chemicals Co., Ltd.) was adjusted to 24 parts by mass instead of 28 parts by mass, and phenol resin (trade name "LVR8210-DL", manufactured by Qunying Chemical Industry Co., Ltd. (manufactured by the company) except that the blending amount was 12 parts by mass instead of 14 parts by mass, and in the same manner as the die-bond film of Example 1, the die-bond film of Comparative Example 2 (thickness 100 μm) was produced. Also, the die-cut die-bonding film of Comparative Example 2 was produced in the same manner as the die-cutting die-bonding film of Example 1, except that the die-bonding film of Comparative Example 2 was used instead of the above-mentioned die-bonding film of Example 1.

[Comparative Example 3] The die attach film of Comparative Example 3 was fabricated in the same manner as the die attach film of Example 1 except that the thickness was set to 200 μm instead of 100 μm. Also, the die-cut die-bonding film of Comparative Example 3 was fabricated in the same manner as the die-cutting die-bonding film of Example 1, except that the die-bonding film of Comparative Example 3 was used instead of the above-mentioned die-bonding film of Example 1.

<Tensile test of die-bonding film> Using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), the above-mentioned die-bonding films from Examples 1 to 7 and Comparative Examples 1 to 3 were tested. The cut-out wafer test pieces (width 10 mm x length 30 mm) were subjected to tensile test to measure yield point strength, breaking strength and elongation at break. In this tensile test, the distance between the initial chucks was 10 mm, the temperature conditions were 23° C., and the tensile speed was 300 mm/min. Each index of the measured yield point strength (N), breaking strength (N) and breaking elongation (%) is disclosed in Table 1.

<Measurement of Viscosity of Die Bond Film> Viscosity at 120° C. in an uncured state was measured for each of the above die bond films of Examples 1 to 7 and Comparative Examples 1 to 3. Specifically, 0.1 g of a sample collected from the wafer was put into a parallel plate (20 mm in diameter) as a measuring plate, and a rheometer (trade name "RS-1", manufactured by HAAKE Co., Ltd.) was used to measure the The melt viscosity (Pa·s) of the sample was measured by the parallel plate method. In this measurement, the gap between parallel plates is 0.1 mm, the strain rate is 5/sec, the heating rate is 10°C/min, and the measurement temperature range is 90-150°C. The measurement results are disclosed in Table 1.

<Evaluation of Severability and Splash of Die Adhesive Film> Using each of the above-mentioned dicing die attach films of Examples 1 to 7 and Comparative Examples 1 to 3, the following bonding step and the first expansion step for cutting ( cold expansion step) and a second expansion step (room temperature expansion step) for separation.

In the bonding step, the semiconductor wafer split body held by the tape for wafer processing (trade name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) is bonded to the die bonding film of the dicing die bonding film, and then, The tape for wafer processing is peeled off from a semiconductor wafer split body. For bonding, a bonding machine was used, the bonding speed was 10 mm/sec, the temperature conditions were 50 to 80° C., and the pressure conditions were 0.15 MPa. Also, the semiconductor wafer division system is formed and prepared as follows. First, for a bare wafer (diameter 12 inches, thickness 780 μm) held by a wafer processing tape (trade name "V12S-R2-P", manufactured by Nitto Denko Co., Ltd.) together with a ring frame, Tokyo Chemical Co., Ltd.), from one side, use a crystal cutting device (trade name "DFD6361", manufactured by Disco Co., Ltd.) to form dividing grooves (width 25 μm, depth 50 μm. Form a grid with an interval of 6mm×12 mm). Next, after attaching a tape for wafer processing (trade name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) Stripped from the wafer. Thereafter, using a back grinding machine (trade name "DGP8760", manufactured by Disco Co., Ltd.), grind from the other side of the wafer (the side where the splitting grooves are not formed) to thin the wafer to a thickness of 20 μm , and then, by dry polishing using the same device, mirror polishing was performed on the grinding surface. As described above, the semiconductor wafer split body (in a state held by the tape for wafer processing) is formed. The semiconductor wafer split body includes a plurality of semiconductor wafers (6 mm×12 mm).

The cold expansion step is carried out in its cold expansion unit using a die expansion device (trade name "Die Separator DDS2300", manufactured by Disco Co., Ltd.). Specifically, first, on the dicing tape adhesive layer of the above-mentioned dicing die-bonding film with a semiconductor wafer split body, a ring frame made of SUS (Disco Co., Ltd.) with a diameter of 12 inches was attached at room temperature. manufactured by the company). Next, the die-cutting die-bonding film is placed in the device, and the die-cutting tape of the die-cutting die-bonding film attached to the semiconductor wafer split is expanded in the cold expansion unit of the same device. In this cold stretching step, the temperature is -15°C, the stretching speed is 300 mm/sec, and the stretching amount is 10 mm.

The expansion step at room temperature was carried out in its room temperature expansion unit using a chip expansion device (trade name "Die Separator DDS2300", manufactured by Disco Co., Ltd.). Specifically, the dicing tape with the dicing die-bonding film of the semiconductor wafer split body that has undergone the above-mentioned cold expansion step is expanded in the normal temperature expansion unit of the same device. In the ordinary temperature expansion step, the temperature is 23° C., the expansion speed is 1 mm/second, and the expansion amount is 10 mm. Afterwards, heat shrinkage treatment is performed on the outer periphery of the workpiece bonding area of the dicing die bonding film that has been expanded at room temperature.

Regarding the cuttability of the die attach film, it was evaluated as good (○) when the breakage occurred in the entire area of the planned cut line after the above-mentioned process using the dicing die attach film, and it was evaluated as bad ( ×). Regarding the spattering of the die bonding film, after the above-mentioned process using the die bonding film, the die bonding film is peeled off from the dicing tape and the situation of the die bonding film splashed on the semiconductor wafer is confirmed to be poor ( ×), otherwise, it was evaluated as good (◯). The results of these evaluations are disclosed in Table 1.

[Evaluation] According to the die bonding films of Examples 1 to 7, good severing and spattering can be suppressed in the expansion step using the dicing die bonding film to obtain a semiconductor wafer with a die bonding film.

[Table 1]

10‧‧‧die bonding film 11‧‧‧die bonding film 20‧‧‧cutting tape 21‧‧‧substrate 22‧‧‧adhesive layer 22a‧‧‧adhesive surface 30a‧‧‧division groove 30b‧‧‧ Modified region 30A‧‧‧semiconductor wafer 30B‧‧‧semiconductor wafer split body 30C‧‧‧semiconductor wafer 31‧‧‧semiconductor wafer 31'‧‧‧semiconductor wafer 41‧‧‧ring frame 42‧‧‧ Retainer 43‧‧‧Jacking member 44‧‧‧Pin member 45‧‧‧Adsorption jig 51‧‧‧Mounting substrate 52‧‧‧Adhesive layer 53‧‧‧Bond wire 54‧‧‧Sealing resin 55‧‧ ‧Bump 56‧‧‧Underfill R‧‧‧Irradiated area T1‧‧‧Tape for wafer processing T1a‧‧‧Adhesive surface T2‧‧‧Tape for wafer processing T2a‧‧‧Adhesive surface T3‧‧‧ Tape for wafer processing T3a‧‧‧Adhesive side W‧‧‧Semiconductor wafer Wa‧‧‧First side Wb‧‧‧Second side X‧‧‧Die bonding film

FIG. 1 is a schematic cross-sectional view of a die-cutting die-bonding film according to an embodiment of the present invention. 2(a) to (d) show a part of the steps of the semiconductor device manufacturing method according to the embodiment of the present invention. 3(a) and (b) show a part of the steps of the semiconductor device manufacturing method according to the embodiment of the present invention. 4(a) to (c) show a part of the steps of the semiconductor device manufacturing method according to the embodiment of the present invention. 5(a) and (b) show a part of steps of a semiconductor device manufacturing method according to an embodiment of the present invention. FIG. 6 shows a part of the steps of the semiconductor device manufacturing method according to the embodiment of the present invention. 7(a) to (c) show a part of the steps of the semiconductor device manufacturing method according to the embodiment of the present invention. 8(a) and (b) show a part of the steps of the semiconductor device manufacturing method according to the embodiment of the present invention. FIG. 9 shows a part of the steps of the semiconductor device manufacturing method according to the embodiment of the present invention. 10(a) to (c) show a part of the steps of the semiconductor device manufacturing method according to the embodiment of the present invention. 11(a) and (b) show a part of the steps of the semiconductor device manufacturing method according to the embodiment of the present invention. Fig. 12 shows a part of the steps of the semiconductor device manufacturing method according to the embodiment of the present invention. 13(a) and (b) show a part of the steps of the semiconductor device manufacturing method according to the embodiment of the present invention. 14(a) to (c) show a part of the steps of the semiconductor device manufacturing method according to the embodiment of the present invention. 15(a) and (b) show a part of steps of a semiconductor device manufacturing method according to an embodiment of the present invention.

10‧‧‧silicon film

20‧‧‧Cutting tape

21‧‧‧Substrate

22‧‧‧adhesive layer

22a‧‧‧adhesive surface

R‧‧‧irradiation area

X‧‧‧Cutting Die Bonding Film

Claims (12)

A die-bonding film, which is a die-bonding film test piece with a width of 10mm, and the yield point strength in the tensile test is 5~15N under the conditions of the distance between the initial chucks of 10mm, 23°C and the tensile speed of 300mm/min. , the breaking strength is 4~15N, and the breaking elongation is 40~400%. The die bonding film as claimed in item 1 has a thickness of 40-200 μm. For example, the crystal adhesive film of claim 1 has a viscosity of 300-5000 Pa‧s at 120°C. For example, the crystal adhesive film according to claim 1, which contains an inorganic filler in a ratio of 10 to 50% by mass. Such as the crystal adhesion film of claim 1, which contains an organic filler in a ratio of 2 to 20% by mass. Such as the crystal adhesion film of claim 4, which contains an organic filler in a ratio of 2 to 20% by mass. Such as the crystal adhesive film of claim 1, which contains an acrylic resin with a glass transition temperature of -40~10°C. The die adhesive film according to any one of claims 1 to 7, which is used to embed the first semiconductor chip mounted on the mounting substrate by wire bonding together with the whole or part of the bonding wire connected to the first semiconductor chip and It is used for forming an adhesive layer for bonding the second semiconductor wafer on the above-mentioned mounting substrate. The die-bonding film according to any one of Claims 1 to 7, which is used to cover and embed a part of the bonding wire of the first semiconductor chip mounted on the mounting substrate by wire-bonding and to cover and embed a part of the bonding wire and to be placed on the above-mentioned first semiconductor chip. It is used to form an adhesive layer for bonding a second semiconductor wafer on a semiconductor wafer. The die-bonding film according to any one of Claims 1 to 7, which is used to form an adhesive layer for embedding a first semiconductor chip to be flip-chip mounted on a mounting substrate and bonding a second semiconductor chip to the above-mentioned mounting substrate . A die-cutting die-bonding film comprising: a die-cutting tape having a laminated structure including a base material and an adhesive layer, and the above-mentioned adhesive layer attached to the die-cutting tape in a detachable manner as in Claims 1 to 10 Any one of the crystal adhesive film. A semiconductor device manufacturing method, which includes: a first step, which is to attach a semiconductor wafer that can be singulated into a plurality of semiconductor wafers, or a plurality of A semiconductor wafer split body of a semiconductor wafer; and a second step, which is to cut the above-mentioned die-adhesive film by extending the above-mentioned dicing tape of the above-mentioned die-cut die-adhesive film to obtain a semiconductor wafer with a die-adhesive film .

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