CN109309039B - Die bonding film, dicing die bonding film, and method for manufacturing semiconductor device - Google Patents

Die bonding film, dicing die bonding film, and method for manufacturing semiconductor device Download PDF

Info

Publication number
CN109309039B
CN109309039B CN201810843733.XA CN201810843733A CN109309039B CN 109309039 B CN109309039 B CN 109309039B CN 201810843733 A CN201810843733 A CN 201810843733A CN 109309039 B CN109309039 B CN 109309039B
Authority
CN
China
Prior art keywords
bonding film
die
dicing
die bonding
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201810843733.XA
Other languages
Chinese (zh)
Other versions
CN109309039A (en
Inventor
宍户雄一郎
高本尚英
大西谦司
木村雄大
福井章洋
大和道子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of CN109309039A publication Critical patent/CN109309039A/en
Application granted granted Critical
Publication of CN109309039B publication Critical patent/CN109309039B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

Provided are a die bonding film, a dicing die bonding film, and a method for manufacturing a semiconductor device, which are suitable for achieving excellent dicing and suppressing scattering in an expanding process using a dicing die bonding film for obtaining a semiconductor chip with a die bonding film. The die-bonding film (10) of the present invention has a yield strength of 15N or less, a breaking strength of 15N or less, and an elongation at break of 40 to 400% in a tensile test conducted on a die-bonding film test piece having a width of 10mm under conditions of an initial chuck pitch of 10mm, a temperature of 23 ℃ and a tensile speed of 300 mm/min.

Description

Die bonding film, dicing die bonding film, and method for manufacturing semiconductor device
Technical Field
The present invention relates to a die bonding film and a dicing die bonding film which can be used in a process of manufacturing a semiconductor device, and a method of manufacturing a semiconductor device.
Background
In the manufacturing process of a semiconductor device, a dicing die bonding film may be used in order to obtain a semiconductor chip having an adhesive film for die bonding, that is, a semiconductor chip having a die bonding film of a size equivalent to that of a die. The dicing die bonding film has a size corresponding to a semiconductor wafer to be processed, and includes, for example: a dicing tape comprising a substrate and an adhesive layer; and a die-bonding film which is detachably adhered to the adhesive layer side thereof.
As one of methods for obtaining a semiconductor chip with a die bonding film using a dicing die bonding film, a method of cutting the die bonding film through a process for expanding a dicing tape in the dicing die bonding film is known. In this method, first, a semiconductor wafer as a workpiece is bonded to a die bonding film that is a dicing die bonding film. The semiconductor wafer is processed such that it is then diced together with dicing of the die bonding film to be singulated into a plurality of semiconductor chips, for example. Next, the dicing tape for dicing the die-bonding film is expanded (expansion step for dicing) in order to sever the die-bonding film so that a plurality of adhesive film chips each adhered to the semiconductor chip are generated from the die-bonding film on the dicing tape. In this expanding step, the dicing is also performed at a position of the semiconductor wafer on the die bonding film corresponding to the dicing position of the die bonding film, and the semiconductor wafer is singulated into a plurality of semiconductor chips on the dicing die bonding film or dicing tape. Then, after the cleaning process, for example, the semiconductor chips are lifted up from the lower side of the dicing tape by the pin members of the pick-up mechanism together with the die-bonding film having a size corresponding to the chips, which are adhered thereto, and then picked up from the dicing tape. Thus, a semiconductor chip with a die bonding film can be obtained. The semiconductor chip with the die bonding film is fixed to an adherend such as a mounting substrate by die bonding via the die bonding film. The technology relating to the dicing die bonding film used as described above and the die bonding film included therein is described in, for example, patent documents 1 to 3 below.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2007-2173
Patent document 2: japanese patent application laid-open No. 2010-177401
Patent document 3: japanese patent application laid-open No. 2012-23161
Disclosure of Invention
Invention of the inventionProblems to be solved
The die bonding film, which is one component of the dicing die bonding film used in the dicing expansion step, is required to be appropriately diced at a dicing scheduled position in the expansion step. In addition, the greater the thickness of the die bonding film, the more difficult such cutting tends to occur.
In the above-described dicing expansion step, in the conventional dicing die-bonding film, the die-bonding film pieces may be scattered from the dicing tape in the areas where the work is not bonded to the die-bonding film. In addition, the larger the thickness of the die bonding film is, the more likely the scattering is generated. Such scattering of the die-bonding film pieces is not preferable because it may cause contamination of the work.
The present invention has been made in view of the above circumstances, and an object thereof is to provide: the dicing die bonding film, and the method for manufacturing a semiconductor device are suitable for achieving good dicing and suppressing scattering in an expanding process using the dicing die bonding film for obtaining a semiconductor chip having the die bonding film.
Solution for solving the problem
According to the 1 st aspect of the present invention, there is provided a die bonding film. The die-bonding film has a yield strength (force required to reach a yield point) of 15N or less in a tensile test conducted on a die-bonding film test piece having a width of 10mm at an initial chuck pitch of 10mm, at 23 ℃ and at a tensile speed of 300 mm/min, a breaking strength (force required to break the die-bonding film) of 15N or less in the test, and an elongation at break (ratio of the length of the elongated portion at break to the length before elongation) of 40 to 400% in the test. In the present invention, the yield strength is preferably 12N or less, more preferably 10N or less, the breaking strength is preferably 12N or less, more preferably 10N or less, and the elongation at break is preferably 40 to 350%, more preferably 40 to 300%. The die bonding film having such a structure can be used to obtain a semiconductor chip with the die bonding film in the process of manufacturing a semiconductor device in a state of being adhered to the adhesive layer side of the dicing tape.
In the manufacturing process of the semiconductor device, as described above, in order to obtain a semiconductor chip with a die bonding film, an expanding process for dicing using a dicing die bonding film may be performed. The present inventors have found that the above-described constitution in which the die-bonding film as one component of the dicing die-bonding film has a yield strength of 15N or less, a breaking strength of 15N or less, and an elongation at break of 40 to 400% in a tensile test performed under conditions of an initial chuck pitch of 10mm, 23 ℃ and a tensile speed of 300 mm/min for a die-bonding film test piece having a width of 10mm is suitable for the die-bonding film in the dicing step to be cut at the predetermined position and to suppress scattering from the dicing tape even when the die-bonding film is relatively thick. For example, examples and comparative examples described below are shown.
The above-mentioned constitution in which the elongation at break in the above-mentioned tensile test is 40 to 400%, preferably 40 to 350%, more preferably 40 to 300% in the present die-bonding film is suitable for avoiding that the tensile length for cutting the die-bonding film becomes excessively large in the stretching step and that the die-bonding film is liable to generate ductile fracture rather than brittle fracture. In the expansion step, the die-bonding film which is more likely to be subjected to ductile fracture is more likely to be subjected to fracture stress to the film to be fractured, and thus the film is more likely to be fractured at the fracture site.
The above-described structure of the die-bonding film having a yield strength of 15N or less, preferably 12N or less, more preferably 10N or less, and a breaking strength of 15N or less, preferably 12N or less, more preferably 10N or less in the tensile test is considered to be suitable for suppressing strain energy accumulated in the film during elongation and breaking of the die-bonding film in the expanding step for dicing. In the expansion step, the chip bonding film having small internal accumulated strain energy in the elongation process and the breaking process is less likely to break in the exposed region (region not covered with the work) and the film pieces are less likely to scatter.
As described above, the die bonding film according to claim 1 of the present invention is suitable for achieving excellent dicing and suppressing scattering when used in the dicing expansion step in a state of being adhered to the adhesive layer side of the dicing tape.
The thickness of the die-bonding film is preferably 40 μm or more, more preferably 60 μm or more, and still more preferably 80 μm or more. Such a configuration is preferable in that the present die bonding film is used as an adhesive film for forming an adhesive layer (thick adhesive film for embedding a semiconductor chip) for embedding the 1 st semiconductor chip mounted on the mounting substrate by wire bonding together with the whole or a part of a bonding wire connected to the 1 st semiconductor chip and bonding the 2 nd semiconductor chip on the mounting substrate. Alternatively, this configuration related to the thickness of the die-bonding film is preferable in that the present die-bonding film is used as a bonding wire connecting position for covering the 1 st semiconductor chip mounted on the mounting substrate by wire bonding, a part of the bonding wire is embedded, and an adhesive film for forming an adhesive layer for bonding the 2 nd semiconductor chip (a thick adhesive film for indirect bonding of a semiconductor chip in which the part of the bonding wire is embedded) is bonded to the 1 st semiconductor chip. Alternatively, this configuration related to the thickness of the die bonding film is preferable in that the present die bonding film is used as an adhesive film for forming an adhesive layer (thick adhesive film for die embedding) for embedding the 1 st semiconductor chip flip-chip mounted on the mounting substrate and bonding the 2 nd semiconductor chip on the mounting substrate. The thickness of the die-bonding film is preferably 200 μm or less, more preferably 160 μm or less, and still more preferably 120 μm or less. Such a configuration is preferable in order to prevent the yield strength, breaking strength, and elongation at break of the die-bonding film from becoming excessively large, and to achieve the above-described configuration in which the yield strength in the tensile test is 15N or less, the breaking strength is 15N or less, and the elongation at break is 40 to 400%.
The viscosity of the die-bonding film in an uncured state at 120℃is preferably 300 Pa.s or more, more preferably 700 Pa.s or more, and still more preferably 1000 Pa.s or more. The viscosity of the die-bonding film in an uncured state at 120 ℃ is preferably 5000pa·s or less, more preferably 4500pa·s or less, and still more preferably 4000pa·s or less. These structures related to the viscosity of the die-bonding film are suitable in terms of using the present die-bonding film as the above-described various thick adhesive films for forming the adhesive layer in which the semiconductor chip and the bonding wire are embedded.
The die-bonding film preferably contains an inorganic filler, and the content of the inorganic filler in the die-bonding film is preferably 10 mass% or more, more preferably 20 mass% or more, and still more preferably 30 mass% or more. When the die-bonding film contains an inorganic filler, the inorganic filler content is preferably 50 mass% or less, more preferably 45 mass% or less, and still more preferably 40 mass% or less. The higher the inorganic filler content in the film for forming an adhesive layer, the lower the elongation at break of the film tends to be and the higher the yield strength tends to be, but this constitution concerning the inorganic filler content in the present die-bonding film is preferable in terms of suppressing the above-mentioned phenomenon that the exposed region (region not covered with a work) of the present die-bonding film breaks and the film pieces scatter.
The die-bonding film preferably contains an organic filler, and the content of the organic filler in the die-bonding film is preferably 2 mass% or more, more preferably 5 mass% or more, and still more preferably 8 mass% or more. In the case where the present die-bonding film contains an organic filler, the content of the organic filler is preferably 20 mass% or less, more preferably 17 mass% or less, and still more preferably 15 mass% or less. This constitution concerning the content of the organic filler in the die-bonding film is preferable in that the yield strength and the breaking strength of the die-bonding film are controlled to be in appropriate ranges.
The die-bonding film preferably contains an acrylic resin having a glass transition temperature of-40 to 10 ℃. Such a constitution is preferable in realizing the constitution that the yield strength of the die bonding film in the tensile test is 15N or less.
According to claim 2 of the present invention, there is provided a dicing die-bonding film. The dicing die bonding film includes: dicing tape and the die bonding film according to the 1 st aspect of the invention. The dicing tape has a laminated structure including a base material and an adhesive layer. The die-bonding film is releasably adhered to the adhesive layer of the dicing tape. The dicing die-bonding film including the die-bonding film according to claim 1 of the present invention is suitable for achieving good dicing of the die-bonding film and suppressing scattering when used in the dicing expansion step.
According to claim 3 of the present invention, there is provided a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the following steps 1 and 2. In step 1, a semiconductor wafer capable of being singulated into a plurality of semiconductor chips or a semiconductor wafer segment including a plurality of semiconductor chips is bonded to the die bonding film in the dicing die bonding film according to claim 2 of the present invention. In step 2, the dicing tape in the dicing die bonding film is spread, and the die bonding film is cut off, whereby a semiconductor chip with the die bonding film is obtained. The present semiconductor device manufacturing method including the dicing step 2, i.e., the dicing step for expanding the die-bonding film using the dicing die-bonding film including the die-bonding film according to the 1 st aspect of the present invention is suitable for achieving good dicing of the die-bonding film in the expanding step and suppressing scattering.
Drawings
Fig. 1 is a schematic cross-sectional view of a dicing die-bonding film according to an embodiment of the invention.
Fig. 2 shows a part of the steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
Fig. 3 shows a part of the steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
Fig. 4 shows a part of the steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
Fig. 5 shows a part of the steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
Fig. 6 shows a part of the steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
Fig. 7 shows a part of the steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
Fig. 8 shows a part of the steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
Fig. 9 shows a part of the steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
Fig. 10 shows a part of the steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
Fig. 11 shows a part of the steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
Fig. 12 shows a part of the steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
Fig. 13 shows a part of the steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
Fig. 14 shows a part of the steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
Fig. 15 shows a part of the steps in the method for manufacturing a semiconductor device according to an embodiment of the present invention.
Description of the reference numerals
X-cut chip bonding film
10 11 chip bonding film
20. Cutting belt
21. Substrate material
22. Adhesive layer
W,30A,30C semiconductor wafer
30B semiconductor wafer separator
30a dividing groove
30b modified region
31. Semiconductor chip
Detailed Description
Fig. 1 is a schematic cross-sectional view of a dicing die-bonding film X according to an embodiment of the present invention. The dicing die-bonding film X has a laminated structure including the die-bonding film 10 and the dicing tape 20 according to one embodiment of the invention. The dicing tape 20 has a laminated structure including a base material 21 and an adhesive layer 22. The adhesive layer 22 has an adhesive surface 22a on the die bonding film 10 side. The die bonding film 10 is releasably adhered to the adhesive layer 22 of the dicing tape 20 or the adhesive surface 22a thereof. The dicing die bonding film X can be used in an expanding process, for example, as described later, in a process of obtaining a semiconductor chip with the die bonding film in the manufacture of a semiconductor device. The dicing die bonding film X has a disk shape having a size corresponding to a semiconductor wafer as a workpiece in the process of manufacturing a semiconductor device, and has a diameter in the range of 345 to 380mm (12-inch wafer corresponding), 245 to 280mm (8-inch wafer corresponding), 495 to 530mm (18-inch wafer corresponding), or 195 to 230mm (6-inch wafer corresponding), for example.
The die bonding film 10 of the dicing die bonding film X has a structure capable of functioning as an adhesive for die bonding exhibiting thermosetting property. The die-bonding film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as the resin component, or may have a composition containing a thermoplastic resin having a thermosetting functional group capable of reacting with a curing agent to generate bonding. When the die bonding film 10 has a composition containing a thermoplastic resin having a thermosetting functional group, the die bonding film 10 does not necessarily contain a thermosetting resin. Such a die bonding film 10 may have a single-layer structure or may have a multilayer structure having a composition different between adjacent layers.
Examples of the thermosetting resin when the die bonding film 10 has a composition including a thermosetting resin and a thermoplastic resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. The die bonding film 10 may contain one kind of thermosetting resin or two or more kinds of thermosetting resins. The epoxy resin is preferable as the thermosetting resin in the die-bonding film 10 because the epoxy resin tends to have a small content of ionic impurities or the like which may cause corrosion of the semiconductor chip to be die-bonded. In addition, as a curing agent for making the epoxy resin exhibit thermosetting properties, a phenol resin is preferable.
Examples of the epoxy resin include: bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, triphenylolmethane type, tetrahydroxyphenylethane type, hydantoin type, triglycidyl isocyanurate type and glycidylamine type epoxy resins. Phenol novolac type epoxy resins, o-cresol novolac type epoxy resins, biphenyl type epoxy resins, triphenylmethane type epoxy resins, and tetraphenylolethane type epoxy resins are rich in reactivity with phenolic resins as curing agents and are excellent in heat resistance, and therefore are preferable as epoxy resins in the die bonding film 10.
Examples of the phenolic resin that can function as a curing agent for epoxy resin include: and polyhydroxystyrenes such as novolak-type phenol resin, resol-type phenol resin and poly-p-hydroxystyrene. Examples of the novolak type phenol resin include: phenol novolac resins, phenol aralkyl resins, cresol novolac resins, t-butylphenol novolac resins, and nonylphenol novolac resins. The die bonding film 10 may contain one kind of phenol resin as a curing agent for the epoxy resin, or may contain two or more kinds of phenol resins as curing agents for the epoxy resin. Phenol novolac resins and phenol aralkyl resins tend to improve connection reliability of the adhesive when used as a curing agent for epoxy resins as adhesives for die bonding, and are therefore preferable as curing agents for epoxy resins in the die bonding film 10.
When the die-bonding film 10 contains an epoxy resin and a phenolic resin as a curing agent thereof, the two resins are blended in a ratio of preferably 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents, of hydroxyl groups in the phenolic resin to 1 equivalent of epoxy groups in the epoxy resin. Such a configuration is preferable in that the curing reaction of the epoxy resin and the phenolic resin is sufficiently performed at the time of curing the die-bonding film 10.
The content ratio of the thermosetting resin in the die-bonding film 10 is preferably 5 to 60% by mass, more preferably 10 to 50% by mass, from the viewpoint of properly exhibiting the function as a thermosetting adhesive for the die-bonding film 10.
The thermoplastic resin in the die-bonding film 10 functions as an adhesive, for example, and when the die-bonding film 10 has a composition including a thermosetting resin and a thermoplastic resin, examples thereof include: acrylic resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon, 6-nylon, saturated polyester resin such as phenoxy resin, polyethylene terephthalate, polybutylene terephthalate, polyamide imide resin, and fluorine resin. The die bonding film 10 may contain one kind of thermoplastic resin or two or more kinds of thermoplastic resins. The acrylic resin is preferable as the thermoplastic resin in the die bonding film 10 because of its low ionic impurities and high heat resistance.
In the case where the die-bonding film 10 contains an acrylic resin as the thermoplastic resin, the content of the monomer unit derived from (meth) acrylic acid ester is preferably at most in terms of mass ratio. "(meth) acrylic" means "acrylic" and/or "methacrylic".
Examples of the (meth) acrylic acid ester used to form the monomer unit of the acrylic resin, that is, the (meth) acrylic acid ester as the constituent monomer of the acrylic resin, include alkyl (meth) acrylate, cycloalkyl (meth) acrylate, and aryl (meth) acrylate. Examples of the alkyl (meth) acrylate include: methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl (i.e., lauryl), tridecyl, tetradecyl, hexadecyl, octadecyl, and eicosyl (meth) acrylates. Examples of the cycloalkyl (meth) acrylate include: cyclopentyl and cyclohexyl (meth) acrylates. Examples of the aryl (meth) acrylate include phenyl (meth) acrylate and benzyl (meth) acrylate. As the constituent monomer of the acrylic resin, one type of (meth) acrylate may be used, or two or more types of (meth) acrylates may be used. In addition, the acrylic resin may be obtained by polymerizing a raw material monomer for forming the same. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization and suspension polymerization.
For the acrylic resin, for example, one or two or more other monomers copolymerizable with the (meth) acrylic acid ester may be used as the constituent monomers for improving the cohesive force and heat resistance. Examples of such monomers include: carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile. Examples of the carboxyl group-containing monomer include: acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include: maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include: 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the epoxy group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include: styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamide propane sulfonic acid, and (meth) acryloxynaphthalene sulfonic acid. Examples of the phosphate group-containing monomer include 2-hydroxyethyl acryloyl phosphate.
For the die-bonding film 10, the acrylic resin contained in the die-bonding film 10 is preferably a copolymer of butyl acrylate and ethyl acrylate and acrylonitrile from the viewpoint of achieving high cohesive force.
When the die-bonding film 10 has a composition including a thermoplastic resin having a thermosetting functional group, for example, an acrylic resin having a thermosetting functional group can be used as the thermoplastic resin. Among the acrylic resins used to form the thermosetting functional group-containing acrylic resin, the content of monomer units derived from (meth) acrylic acid esters is preferably at the maximum in terms of mass ratio. As such a (meth) acrylate, for example, the same (meth) acrylate as the above-mentioned (meth) acrylate as a constituent monomer of the acrylic resin contained in the die-bonding film 10 can be used. On the other hand, examples of the thermosetting functional group used for forming the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group. Among them, glycidyl groups and carboxyl groups can be suitably used. That is, as the thermosetting functional group-containing acrylic resin, glycidyl group-containing acrylic resin and carboxyl group-containing acrylic resin can be suitably used. In addition, a curing agent capable of reacting with the thermosetting functional group-containing acrylic resin is selected according to the kind of the thermosetting functional group in the resin. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, the same phenolic resin as the phenolic resin described above as the curing agent for epoxy resin can be used as the curing agent.
For the die-bonding film 10 before curing for die-bonding, for example, in order to achieve a certain degree of crosslinking, a polyfunctional compound capable of reacting with and bonding to functional groups or the like at the molecular chain ends of the resin component contained in the die-bonding film 10 is preferably blended in advance as a crosslinking agent in the resin composition for die-bonding film formation. Such a configuration is preferable in terms of improving the adhesive property of the die bonding film 10 at high temperature and in terms of improving heat resistance. Examples of such a crosslinking agent include: a polyisocyanate compound. Examples of the polyisocyanate compound include: toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5-naphthalene diisocyanate, and adducts of polyols and diisocyanates. The content of the crosslinking agent in the resin composition for forming a die-bonding film is preferably 0.05 parts by mass or more with respect to 100 parts by mass of the resin having the functional group capable of reacting with and bonding to the crosslinking agent, from the viewpoint of improving the cohesive force of the formed die-bonding film 10, and preferably 7 parts by mass or less from the viewpoint of improving the adhesive force of the formed die-bonding film 10. As the crosslinking agent in the die-bonding film 10, other polyfunctional compounds such as epoxy resin and polyisocyanate compound may be used in combination.
The glass transition temperature of the acrylic resin and the thermosetting functional group-containing acrylic resin blended in the die-bonding film 10 is preferably-40 to 10 ℃. As the glass transition temperature of the polymer, a glass transition temperature (theoretical value) obtained based on the following Fox formula can be used. The Fox formula is a relation between the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of the homopolymer of each constituent monomer in the polymer. In the following Fox formula, tg represents the glass transition temperature (. Degree. C.) of the polymer, wi represents the weight fraction of the monomer i constituting the polymer, tgi represents the glass transition temperature (. Degree. C.) of the homopolymer of the monomer i. As the glass transition temperature of the homopolymer, for example, the glass transition temperatures of various homopolymers are listed in "synthetic resin entrance for New Polymer library 7 paint" (Santa Clara, north Kokai, polymer Press, 1995), "acrylic acid ester catalogue (1997 edition)" (Mitsubishi Yang Zhushi Co.). On the other hand, the glass transition temperature of the homopolymer of the monomer can be obtained by a method specifically described in JP-A2007-51271.
Fox 1/(273+tg) =Σ [ Wi/(273+tgi) ]
The die attach film 10 may contain a filler. The filler is preferably blended in the die-bonding film 10 from the viewpoint of adjusting physical properties such as elastic modulus, yield strength, and elongation at break of the die-bonding film 10. Examples of the filler include inorganic fillers and organic fillers. The filler may have various shapes such as spherical, needle-like, and plate-like. The die bonding film 10 may contain one kind of filler or two or more kinds of fillers.
Examples of the constituent material of the inorganic filler include: aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. Examples of the constituent material of the inorganic filler include elemental metals such as aluminum, gold, silver, copper, and nickel, alloys, amorphous carbon, and graphite. When the die-bonding film 10 contains an inorganic filler, the content of the inorganic filler is preferably 10 mass% or more, more preferably 20 mass% or more, and still more preferably 30 mass% or more. The content is preferably 50% by mass or less, more preferably 45% by mass or less, and still more preferably 40% by mass or less.
Examples of the constituent material of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyether ether ketone, polyether imide, and polyester imide. When the die bonding film 10 contains an organic filler, the content of the organic filler is preferably 2 mass% or more, more preferably 5 mass% or more, and still more preferably 8 mass% or more. The content is preferably 20% by mass or less, more preferably 17% by mass or less, and still more preferably 15% by mass or less.
When the die-bonding film 10 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10. Mu.m, more preferably 0.05 to 1. Mu.m. The filler having an average particle diameter of 0.005 μm or more is preferable in that the die-bonding film 10 can have high wettability and adhesiveness to an adherend such as a semiconductor wafer. The structure in which the average particle diameter of the filler is 10 μm or less is preferable in order to obtain a sufficient filler addition effect for the die-bonding film 10 and to secure heat resistance. The average particle diameter of the filler can be determined, for example, by using a light particle size distribution analyzer (trade name "LA-910", manufactured by horiba, inc.).
The die bonding film 10 may contain a heat curing catalyst. The incorporation of the heat curing catalyst into the die-bonding film 10 is preferable for sufficiently performing the curing reaction of the resin component at the time of curing the die-bonding film 10 and for increasing the curing reaction rate. Examples of such a heat curing catalyst include: imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihaloborane-based compounds. Examples of the imidazole compound include: 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1, 2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-diamino-6- [2' -methylimidazole- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2' -undecylimidazole- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2' -ethyl-4 ' -methylimidazole- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2' -methylimidazole- (1 ') ] -ethyl-s-triazine isocyanurate adduct, 2-phenyl-4, 5-dihydroxy-methylimidazole and 2-phenyl-4-methyl-5-hydroxy-imidazole. Examples of the triphenylphosphine compound include: triphenylphosphine, tris (butylphenyl) phosphine, tris (p-methylphenyl) phosphine, tris (nonylphenyl) phosphine, diphenyltolylphosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. The triphenylphosphine compound also includes a compound having both a triphenylphosphine structure and a triphenylborane structure. Examples of such a compound include: tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-tolylborate, benzyl triphenyl phosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of the amine compound include monoethanolamine trifluoroborate and dicyandiamide. Examples of the trihaloborane compound include trichloroborane. The die-bonding film 10 may contain one kind of heat-curing catalyst or two or more kinds of heat-curing catalysts.
The die bonding film 10 may contain one or two or more other components as necessary. Examples of the other component include a flame retardant, a silane coupling agent, and an ion scavenger. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resins. Examples of the silane coupling agent include: beta- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, gamma-epoxypropoxypropyltrimethoxysilane and gamma-epoxypropoxypropylmethyldiethoxysilane. Examples of the ion scavenger include: hydrotalcite, bismuth hydroxide, aqueous antimony oxide (e.g., IXE-300 manufactured by Toyama Synthesis Co., ltd.), zirconium phosphate of a specific structure (e.g., IXE-100 manufactured by Toyama Synthesis Co., ltd.), and magnesium silicate (for example, "KYOWAAD 600" manufactured by co-chemical industries, co., ltd.) and aluminum silicate (for example, "KYOWAAD 700" manufactured by co-chemical industries, co., ltd.). Compounds that can form complexes with metal ions can also be used as ion traps. Examples of such a compound include: triazole-based compounds, tetrazole-based compounds, and bipyridine-based compounds. Among them, triazole-based compounds are preferable from the viewpoint of stability of a complex formed with a metal ion. Examples of such triazole compounds include: 1,2, 3-benzotriazole, 1- { N, N-bis (2-ethylhexyl) aminomethyl } benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-3, 5-di-tert-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-tert-butyl-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3, 5-di-tert-pentylphenyl) benzotriazole, 2- (2-hydroxy-5-tert-octylphenyl) benzotriazole, 6- (2-benzotriazole) -4-tert-octyl-6 ' -tert-butyl-4 ' -methyl-2, 2' -methylenebisphenol, 1- (2, 3-dihydroxypropyl) benzotriazole, 1- (1, 2-dicarboxydiphenyl) benzotriazole, 1- (2-ethylhexyl aminomethyl) benzotriazole, 2, 4-di-tert-amyl-6- { (H-benzo-1-yl) methyl } phenol, 2- (2-hydroxy-3, 5-tert-butylphenyl) -2-tert-butyl-6 ' -methyl-2, 2-hydroxy-3-chlorophenyl ] benzotriazole, 2-tert-butyl-2-hydroxy-3-phenyl ] 2-hydroxy-2-chlorophenyl ] 2,2' -benzylidene-benzotriazole, 1- (2, 3-dicarboxydiphenyl) benzotriazole, 2-1- (2-ethylhexyl) benzotriazol-2-dicarboxyd-t-3-t-butyl-6-methyl) benzene, 2-ethylhexyl-3- [ 3-tert-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl ] propionate, 2- (2H-benzotriazol-2-yl) -6- (1-methyl-1-phenylethyl) -4- (1, 3-tetramethylbutyl) phenol, 2- (2H-benzotriazol-2-yl) -4-tert-butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-tert-octylphenyl) -benzotriazole, 2- (3-tert-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3, 5-di-tert-pentylphenyl) benzotriazole, 2- (2-hydroxy-3, 5-di-tert-butylphenyl) -5-chloro-benzotriazole, 2- [ 2-hydroxy-3, 5-di (1, 1-dimethylbenzyl) phenyl ] -2H-benzotriazole, 2' -methylenebis- [6- (2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, [2- (3-hydroxy-3, 5-di-tert-butylphenyl) -2H-benzotriazole, α -dimethylbenzyl) phenyl ] -2H-benzotriazole, methyl-3- [3- (2H-benzotriazol-2-yl) -5-tert-butyl-4-hydroxyphenyl ] propionate. In addition, specific hydroxyl-containing compounds such as hydroquinone compounds, hydroxyanthraquinone compounds, polyphenol compounds, and the like can also be used as ion capturing agents. Specific examples of such hydroxyl group-containing compounds include: 1, 2-benzenediol, alizarin, anthramagenta, tannin, gallic acid, methyl gallate and pyrogallol.
The thickness of the die-bonding film 10 is preferably 40 μm or more, more preferably 60 μm or more, and still more preferably 80 μm or more. The thickness of the die-bonding film is preferably 200 μm or less, more preferably 160 μm or less, and still more preferably 120 μm or less.
The die-bonding film 10 has a yield strength of 15N or less, preferably 12N or less, and more preferably 10N or less in a tensile test performed under conditions of an initial chuck pitch of 10mm, 23 ℃ and a tensile speed of 300 mm/min for a die-bonding film test piece having a width of 10 mm. At the same time, the breaking strength of the die-bonding film 10 in the same test is 15N or less, preferably 12N or less, more preferably 10N or less. At the same time, the elongation at break of the die-bonding film 10 in the same test is 40 to 400%, preferably 40 to 350%, more preferably 40 to 300%. The yield strength, breaking strength and elongation at break can be measured using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu corporation). The yield strength, breaking strength, and breaking elongation of the die-bonding film 10 can be adjusted by controlling the blending amount of the inorganic filler and/or the organic filler in the die-bonding film 10, controlling the glass transition temperature of the acrylic resin in the die-bonding film 10, and the like.
The viscosity of the die-bonding film 10 in the uncured state at 120 ℃ is preferably 300pa·s or more, more preferably 700pa·s or more, and still more preferably 1000pa·s or more. The viscosity of the die-bonding film 10 in the uncured state at 120 ℃ is preferably 5000pa·s or less, more preferably 4500pa·s or less, and still more preferably 4000pa·s or less.
The die-bonding film 10 as described above exhibits a 180 ° peel adhesion of, for example, 0.3 to 20N/10mm with respect to the SUS plane in a peel test under conditions of a temperature of 23 ℃, a peel angle of 180 ° and a tensile speed of 300 mm/min. Such a configuration is suitable in ensuring the holding of the work based on the dicing die bonding film X and/or the die bonding film 10 thereof.
The base material 21 of the dicing tape 20 in the dicing tape 20 and/or the dicing die-bonding film X serves as a support. The substrate 21 is, for example, a plastic substrate, and a plastic film can be suitably used as the plastic substrate. Examples of the constituent material of the plastic base material include: polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, aromatic polyamide, fluorine resin, cellulose resin and silicone resin. Examples of the polyolefin include: low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homo-polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer and ethylene-hexene copolymer. Examples of the polyester include: polyethylene terephthalate, polyethylene naphthalate and polybutylene terephthalate. The base material 21 may be formed of one material or two or more materials. The substrate 21 may have a single-layer structure or a multilayer structure. When the pressure-sensitive adhesive layer 22 on the substrate 21 is ultraviolet-curable as will be described later, the substrate 21 preferably has ultraviolet-light transmittance. When the base material 21 is made of a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film.
In the case of shrinking the dicing tape 20 and/or the base material 21 by, for example, local heating when the dicing die-bonding film X is used, the base material 21 preferably has heat shrinkability. In addition, when the base material 21 is made of a plastic film, the base material 21 is preferably a biaxially stretched film in terms of making the dicing tape 20 and/or the base material 21 isotropic heat shrinkability. The heat shrinkage in the heat treatment test performed at a heating temperature of 100 ℃ and a heat treatment time of 60 seconds of the dicing tape 20 and/or the base material 21 is preferably 2 to 30%, more preferably 2 to 25%, still more preferably 3 to 20%, still more preferably 5 to 20%. The heat shrinkage means at least one of the so-called MD heat shrinkage and the so-called TD heat shrinkage.
The surface of the substrate 21 on the side of the adhesive layer 22 may be subjected to a physical treatment, a chemical treatment, or a primer treatment for improving adhesion to the adhesive layer 22. Examples of the physical treatment include: corona treatment, plasma treatment, sandblasting treatment, ozone exposure treatment, flame exposure treatment, high-voltage shock exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment.
From the viewpoint of securing strength for causing the base material 21 to function as a support in the dicing tape 20 and/or dicing die bonding film X, the thickness of the base material 21 is preferably 40 μm or more, more preferably 50 μm or more, more preferably 55 μm or more, and still more preferably 60 μm or more. In addition, from the viewpoint of achieving a suitable flexibility of the dicing tape 20 and/or dicing die-bonding film X, the thickness of the base material 21 is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 μm or less.
The adhesive layer 22 of the dicing tape 20 contains an adhesive. The adhesive may be an adhesive (adhesive force-reducible adhesive) which can intentionally reduce the adhesive force by an external action during use of the dicing die-bonding film X, or an adhesive (adhesive force-nondegradable adhesive) which can hardly or not reduce the adhesive force by an external action during use of the dicing die-bonding film X. The adhesive agent of the adhesive force-reducible type or the adhesive force-nondegradable type may be used as the adhesive agent in the adhesive layer 22, and may be appropriately selected depending on the manner of use of the dicing die bonding film X, such as the method and conditions for singulating the semiconductor chips that are singulated using the dicing die bonding film X.
When an adhesive agent with reduced adhesive force is used as the adhesive agent in the adhesive layer 22, a state in which the adhesive layer 22 exhibits relatively high adhesive force and a state in which it exhibits relatively low adhesive force can be used differently during use of the dicing die bonding film X. For example, when the dicing die-bonding film X is used in an expanding process described later, a high-adhesion state of the adhesive layer 22 is used to suppress or prevent the peeling of the adhesive layer 22 from the die-bonding film 10, and after that, in a pickup process described later for picking up a semiconductor chip with a die-bonding film from the dicing tape 20 for dicing the die-bonding film X, a low-adhesion state of the adhesive layer 22 may be used to facilitate the pickup of the semiconductor chip with a die-bonding film from the adhesive layer 22.
Examples of such an adhesive agent with reduced adhesive force include an adhesive agent (radiation curable adhesive agent) which can be cured by irradiation of radiation during use of the dicing die bonding film X, a heat-foamable adhesive agent, and the like. In the adhesive layer 22 of the present embodiment, one type of adhesive force-reducible adhesive may be used, or two or more types of adhesive force-reducible adhesives may be used. The whole of the adhesive layer 22 may be formed of an adhesive force-reducible adhesive, or a part of the adhesive layer 22 may be formed of an adhesive force-reducible adhesive. For example, when the adhesive layer 22 has a single-layer structure, the entire adhesive layer 22 may be formed of an adhesive force-reducible adhesive, or a predetermined portion (for example, a central region of an attachment target region as a work) in the adhesive force-reducible adhesive layer 22 and other portions (for example, a region which is an attachment target region of a ring frame and is located outside the central region) may be formed of an adhesive force-nondegradable adhesive. In the case where the adhesive layer 22 has a multilayer structure, all layers of the multilayer structure may be formed with an adhesive force-reducible adhesive, or a part of the layers in the multilayer structure may be formed with an adhesive force-reducible adhesive.
Examples of the radiation-curable adhesive used for the adhesive layer 22 include adhesives of a type cured by irradiation with electron rays, ultraviolet rays, α rays, β rays, γ rays, or X rays, and adhesives of a type cured by ultraviolet rays (ultraviolet-curable adhesives) can be particularly suitably used.
Examples of the radiation curable adhesive used for the adhesive layer 22 include additive type radiation curable adhesives containing a radiation polymerizable monomer component and oligomer component having a functional group such as a radiation polymerizable carbon-carbon double bond, such as an acrylic polymer as an acrylic adhesive.
For the above acrylic polymer, it is preferable that the content of the monomer unit derived from the (meth) acrylic acid ester is the largest in mass ratio. Examples of the (meth) acrylate ester that is a monomer unit for forming the acrylic polymer, that is, the (meth) acrylate ester that is a constituent monomer of the acrylic polymer include: the alkyl (meth) acrylate, cycloalkyl (meth) acrylate, and aryl (meth) acrylate, more specifically, (meth) acrylic esters similar to the (meth) acrylic esters described above with respect to the acrylic resin used for the die-bonding film 10, are exemplified. As the constituent monomer of the acrylic polymer, one type of (meth) acrylate may be used, or two or more types of (meth) acrylates may be used. The constituent monomers of the acrylic polymer are preferably 2-ethylhexyl acrylate and lauryl acrylate. In addition, the ratio of (meth) acrylate in the entire constituent monomer of the acrylic polymer is preferably 40 mass% or more, more preferably 60 mass% or more, from the viewpoint of suitably exhibiting basic characteristics such as adhesion by (meth) acrylate in the adhesive layer 22.
The acrylic polymer may further contain one or two or more other monomers copolymerizable with the (meth) acrylic acid ester in order to improve, for example, the cohesive force and heat resistance thereof. Examples of such monomers include: examples of the carboxyl group-containing monomer, acid anhydride monomer, hydroxyl group-containing monomer, epoxy group-containing monomer, sulfonic acid group-containing monomer, phosphoric acid group-containing monomer, acrylamide and acrylonitrile include, more specifically, the same copolymerizable monomers as those described above with respect to the acrylic resin used for the die-bonding film 10.
The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth) acrylate in order to form a crosslinked structure in its polymer skeleton. Examples of such polyfunctional monomers include: hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, polyglycidyl (meth) acrylate, polyester (meth) acrylate, and urethane (meth) acrylate. "(meth) acrylate" means "acrylate" and/or "methacrylate". As the constituent monomer of the acrylic polymer, one type of polyfunctional monomer may be used, or two or more types of polyfunctional monomers may be used. The proportion of the polyfunctional monomer in the entire constituent monomers of the acrylic polymer is preferably 40 mass% or less, more preferably 30 mass% or less, in order to suitably exhibit basic characteristics such as adhesiveness due to (meth) acrylic acid ester in the adhesive layer 22.
The acrylic polymer may be obtained by polymerizing a raw material monomer for forming the same. Examples of the polymerization method include: solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the semiconductor device manufacturing method using dicing tape 20 and/or dicing die-bonding film X, the low molecular weight substance in adhesive layer 22 in dicing tape 20 and/or dicing die-bonding film X is preferably small, and the number average molecular weight of the acrylic polymer is preferably 10 ten thousand or more, more preferably 20 ten thousand to 300 ten thousand.
The adhesive layer 22 and/or the adhesive used for forming the same may contain an external crosslinking agent, for example, in order to increase the number average molecular weight of the base polymer such as an acrylic polymer. Examples of the external crosslinking agent that reacts with a base polymer such as an acrylic polymer to form a crosslinked structure include: a polyisocyanate compound, an epoxy compound, a polyol compound, an aziridine compound and a melamine-based crosslinking agent. The content of the external crosslinking agent in the adhesive layer 22 and/or the adhesive used to form it is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the base polymer.
Examples of the radiation-polymerizable monomer component for forming the radiation-curable adhesive include: urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1, 4-butanediol di (meth) acrylate. Examples of the radiation-polymerizable oligomer component for forming the radiation-curable adhesive include: various oligomers such as urethane, polyether, polyester, polycarbonate and polybutadiene are suitable, and those having a molecular weight of about 100 to 30000. The total content of the radiation-polymerizable monomer component and the oligomer component in the radiation-curable adhesive is determined so that the adhesive force of the formed adhesive layer 22 can be appropriately reduced, and is preferably 5 to 500 parts by mass, more preferably 40 to 150 parts by mass, relative to 100 parts by mass of the base polymer such as the acrylic polymer. Further, as the additive type radiation curable adhesive, for example, those disclosed in Japanese patent application laid-open No. 60-196956 can be used.
Examples of the radiation curable adhesive used for the adhesive layer 22 include an internal radiation curable adhesive containing a base polymer having a functional group such as a radiation polymerizable carbon-carbon double bond in a polymer side chain, a polymer main chain, or a polymer main chain end. Such an internal-type radiation-curable adhesive is preferable in terms of suppressing an undesired change over time in the adhesive properties of the formed adhesive layer 22 caused by the movement of the low-molecular-weight component.
The base polymer contained in the internal radiation curable adhesive preferably has an acrylic polymer as a basic skeleton. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer can be used. Examples of the method for introducing a radiation polymerizable carbon-carbon double bond into an acrylic polymer include the following methods: after copolymerizing a raw material monomer including a monomer having a predetermined functional group (functional group 1), a compound having a predetermined functional group (functional group 2) capable of reacting with and bonding to the functional group 1 and a radiation polymerizable carbon-carbon double bond is subjected to a condensation reaction or an addition reaction with the acrylic polymer while maintaining the radiation polymerization property of the carbon-carbon double bond.
Examples of the combination of the 1 st functional group and the 2 nd functional group include: carboxyl group and epoxy group, epoxy group and carboxyl group, carboxyl group and aziridinyl group, aziridinyl group and carboxyl group, hydroxyl group and isocyanate group, isocyanate group and hydroxyl group. Among these combinations, a combination of a hydroxyl group and an isocyanate group and a combination of an isocyanate group and a hydroxyl group are preferable from the viewpoint of ease of reaction tracking. Further, since the technical difficulty in producing a polymer having an isocyanate group with high reactivity is high, it is more preferable that the 1 st functional group on the acrylic polymer side is a hydroxyl group and the 2 nd functional group is an isocyanate group from the viewpoint of easiness in producing or obtaining an acrylic polymer. In this case, examples of the isocyanate compound having both a radiation polymerizable carbon-carbon double bond and an isocyanate group as the 2 nd functional group, that is, an isocyanate compound having a radiation polymerizable unsaturated functional group, include: methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate (MOI) and m-isopropenyl-alpha, alpha-dimethylbenzyl isocyanate.
The radiation curable adhesive used for the adhesive layer 22 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include: alpha-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, haloketone, acyl phosphine oxides, and acyl phosphonates. Examples of the α -ketol compound include: 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α -hydroxy- α, α' -dimethyl acetophenone, 2-methyl-2-hydroxy propiophenone, and 1-hydroxycyclohexyl phenyl ketone. Examples of the acetophenone compound include: methoxyacetophenone, 2-dimethoxy-1, 2-diphenylethan-1-one, 2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio) -phenyl ] -2-morpholinopropane-1. Examples of the benzoin ether compound include: benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether. Examples of the ketal compound include benzildimethyl ketal. Examples of the aromatic sulfonyl chloride compound include 2-naphthalenesulfonyl chloride. Examples of the photoactive oxime-based compound include 1-phenyl-1, 2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone compound include: benzophenone, benzoyl benzoic acid and 3,3' -dimethyl-4-methoxybenzophenone. Examples of the thioxanthone compound include: thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2, 4-dimethylthioxanthone, isopropylthioxanthone, 2, 4-dichlorothioxanthone, 2, 4-diethylthioxanthone and 2, 4-diisopropylthioxanthone. The content of the photopolymerization initiator in the radiation curable adhesive in the adhesive layer 22 is, for example, 0.05 to 20 parts by mass relative to 100 parts by mass of the base polymer such as the acrylic polymer.
The heat-expandable adhesive used for the adhesive layer 22 is an adhesive containing a component (a foaming agent, thermally expandable microspheres, etc.) that expands and expands by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the thermally expandable microspheres include microspheres in which a substance that is easily gasified and expanded by heating is enclosed in a shell. Examples of the inorganic foaming agent include: ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium borohydride, and azides. Examples of the organic foaming agent include: chlorofluoroalkanes such as trichloromonofluoromethane and dichloromonofluoromethane, azo compounds such as azodiisobutyronitrile, azodicarbonamide and barium azodicarboxylate, hydrazine compounds such as p-toluenesulfonyl hydrazine, diphenylsulfone-3, 3' -disulfonyl hydrazide, 4' -oxybis (benzenesulfonyl hydrazide) and allylbis (sulfonyl hydrazide), semicarbazide compounds such as p-toluenesulfonyl semicarbazide and 4,4' -oxybis (benzenesulfonyl semicarbazide), triazole compounds such as 5-morpholino-1, 2,3, 4-thio triazole, and N-nitroso pentamethylene tetramine and N, N ' -dimethyl-N, N ' -dinitroso terephthalamide. Examples of the substance that can be easily vaporized and expanded by heating to form the thermally expandable microspheres include: isobutane, propane and pentane. Thermally expandable microspheres are produced by encapsulating a substance that is easily vaporized and expanded by heating into a shell-forming substance by a coagulation method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal melting property or a substance which can be broken by the effect of thermal expansion of the enclosed substance can be used. Examples of such a substance include: vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.
Examples of the adhesive force non-decreasing type adhesive include: an adhesive, a pressure-sensitive adhesive, and the like in which the above-mentioned radiation-curable adhesive, which is related to an adhesive force-reducible adhesive, is cured by irradiation of radiation in advance. The radiation curable adhesive, depending on the type and content of the polymer component contained therein, can exhibit adhesion due to the polymer component even when the adhesion is reduced by radiation curing, and can exhibit adhesion that can be used to adhere and hold an adherend in a predetermined manner of use. In the adhesive layer 22 of the present embodiment, one kind of adhesive force non-reduced adhesive agent may be used, or two or more kinds of adhesive force non-reduced adhesive agents may be used. The whole of the adhesive layer 22 may be formed of an adhesive force non-decreasing type adhesive, or a part of the adhesive layer 22 may be formed of an adhesive force non-decreasing type adhesive. For example, when the adhesive layer 22 has a single-layer structure, the entire adhesive layer 22 may be formed of the adhesive force non-reduced adhesive, as described above, a predetermined portion (for example, a region which is an attachment target region of the annular frame and is located outside the attachment target region of the wafer) in the adhesive layer 22 may be formed of the adhesive force non-reduced adhesive, and another portion (for example, a central region which is an attachment target region of the wafer) may be formed of the adhesive force reduced adhesive. In the case where the adhesive layer 22 has a multilayer structure, all layers of the multilayer structure may be formed by the adhesive force non-reduced adhesive, or a part of the layers in the multilayer structure may be formed by the adhesive force non-reduced adhesive.
On the other hand, as the pressure-sensitive adhesive used for the adhesive layer 22, for example, an acrylic adhesive or a rubber-based adhesive using an acrylic polymer as a base polymer can be used. When the pressure-sensitive adhesive layer 22 contains an acrylic adhesive as the pressure-sensitive adhesive, the content of the monomer unit derived from (meth) acrylate is preferably at most in mass ratio in the acrylic polymer as the base polymer of the acrylic adhesive. Examples of such an acrylic polymer include the acrylic polymers described above with respect to the radiation curable adhesive.
The adhesive layer 22 and/or the adhesive used for forming the same may contain a crosslinking accelerator, a tackifier, an anti-aging agent, a pigment, a colorant such as a dye, and the like in addition to the above-described components. The colorant may be a compound that is colored by irradiation with radiation. Examples of such a compound include leuco dyes.
The thickness of the adhesive layer 22 is preferably 1 to 50. Mu.m, more preferably 2 to 30. Mu.m, still more preferably 5 to 25. Mu.m. Such a configuration is preferable in terms of obtaining a balance of adhesion force of the adhesive layer 22 to the die bonding film 10 before and after radiation curing when the adhesive layer 22 contains a radiation curable adhesive, for example.
The dicing die bonding film X having the above-described structure can be manufactured, for example, as follows.
In the production of the die-bonding film 10 of the dicing die-bonding film X, first, an adhesive composition for forming the die-bonding film 10 is prepared, and then the composition is applied to a predetermined separator to form an adhesive composition layer. Examples of the separator include: polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, plastic film surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent, paper, and the like. Examples of the method for applying the adhesive composition include: roll coating, screen coating, and gravure coating. Next, the adhesive composition layer is dried by heating as needed, and a crosslinking reaction is generated as needed. The heating temperature is, for example, 70 to 160℃and the heating time is, for example, 1 to 5 minutes. As described above, the die bonding film 10 can be manufactured in the form of a separator.
The dicing tape 20 for dicing the die-bonding film X can be produced by providing the adhesive layer 22 on the prepared base material 21. For example, the resin substrate 21 can be produced by a film-forming method such as a roll-forming method, a casting method in an organic solvent, a blow-extrusion method in a closed system, a T-die extrusion method, a coextrusion method, or a dry lamination method. The film after film formation and/or the substrate 21 are subjected to a predetermined surface treatment as needed. In the formation of the adhesive layer 22, for example, after preparing an adhesive composition for forming an adhesive layer, the composition is first coated on the substrate 21 or a predetermined separator to form an adhesive composition layer. Examples of the method for applying the adhesive composition include roll coating, screen coating, and gravure coating. Subsequently, the adhesive composition layer is dried by heating as needed, and a crosslinking reaction is performed as needed. The heating temperature is, for example, 80 to 150℃and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 22 is formed on the separator, the pressure-sensitive adhesive layer 22 with the separator is bonded to the base material 21, and then the separator is peeled off. Thus, the dicing tape 20 having a laminated structure of the base material 21 and the adhesive layer 22 was produced.
In the production of the dicing die-bonding film X, the dicing tape 20 is then bonded to the pressure-sensitive adhesive layer 22 side of the dicing tape 10, for example, by pressure bonding. The bonding temperature is, for example, 30 to 50℃and preferably 35 to 45 ℃. The bonding pressure (line pressure) is, for example, 0.1 to 20kgf/cm, preferably 1 to 10kgf/cm. In the case where the pressure-sensitive adhesive layer 22 contains the above-mentioned radiation curable pressure-sensitive adhesive, the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the lamination, or the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays from the side of the base material 21 after the lamination. Alternatively, such irradiation with radiation may not be performed during the production of the dicing die-bonding film X (in this case, the adhesive layer 22 can be radiation-cured during the use of the dicing die-bonding film X). When the pressure-sensitive adhesive layer 22 is an ultraviolet-curable pressure-sensitive adhesive layer, the amount of ultraviolet radiation used to cure the pressure-sensitive adhesive layer 22 is, for example, 50 to 500mJ/cm 2 Preferably 100 to 300mJ/cm 2 . The area (irradiation area R) of the dicing die-bonding film X to be irradiated as a measure for reducing the adhesive force of the adhesive layer 22 is, for example, an area other than the peripheral edge portion of the die-bonding film bonding area in the adhesive layer 22, as shown in fig. 1.
In the above manner, the dicing die bonding film X can be manufactured. For the dicing die bonding film X, a separator (not shown) may be provided on the die bonding film 10 side so as to cover at least the die bonding film 10. When the die-bonding film 10 is smaller than the pressure-sensitive adhesive layer 22 of the dicing tape 20 and there is a region of the pressure-sensitive adhesive layer 22 to which the die-bonding film 10 is not bonded, for example, a spacer may be provided so as to cover at least the die-bonding film 10 and the pressure-sensitive adhesive layer 22. The separator is a component for protecting the die bonding film 10 and the adhesive layer 22 from being exposed, and is peeled off from the dicing die bonding film X when the film is used.
Fig. 2 to 8 illustrate a method for manufacturing a semiconductor device according to an embodiment of the present invention.
In the present method for manufacturing a semiconductor device, first, as shown in fig. 2 (a) and 2 (b), dividing grooves 30a are formed in a semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor devices (not shown) have been mounted on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor devices have been formed on the 1 st surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is attached to the 2 nd surface Wb side of the semiconductor wafer W, the dicing groove 30a having a predetermined depth is formed on the 1 st surface Wa side of the semiconductor wafer W by using a rotary blade such as a dicing device in a state where the semiconductor wafer W is held on the wafer processing tape T1. The dividing grooves 30a are voids for separating the semiconductor wafer W into semiconductor chip units (the dividing grooves 30a are schematically shown by thick lines in fig. 2 to 4).
Next, as shown in fig. 2 (c), the wafer processing tape T2 having the adhesive surface T2a is bonded to the 1 st surface Wa side of the semiconductor wafer W and the wafer processing tape T1 is peeled from the semiconductor wafer W.
Next, as shown in fig. 2 d, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb while the semiconductor wafer W is held on the wafer processing tape T2 (wafer thinning step). The grinding may be performed using a grinding device having a grinding stone. Through this wafer thinning process, the semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips 31 is formed in the present embodiment. Specifically, the semiconductor wafer 30A has a portion (connection portion) to be connected to a portion on the 2 nd side Wb side to be singulated into a plurality of semiconductor chips 31. The thickness of the connection portion of the semiconductor wafer 30A, that is, the distance between the 2 nd surface Wb of the semiconductor wafer 30A and the 2 nd surface Wb side tip of the dividing groove 30A is, for example, 1 to 30 μm, preferably 3 to 20 μm.
Next, as shown in fig. 3 (a), the die bonding film 10 for cutting the die bonding film X is bonded to the semiconductor wafer 30A held by the wafer processing tape T2. Thereafter, as shown in fig. 3 (b), the wafer processing tape T2 is peeled from the semiconductor wafer 30A . In the case where the adhesive layer 22 in the dicing die-bonding film X is a radiation-curable adhesive layer, instead of the radiation irradiation described above in the process of manufacturing the dicing die-bonding film X, the adhesive layer 22 may be irradiated with radiation such as ultraviolet rays from the side of the base material 21 after the bonding of the semiconductor wafer 30A to the die-bonding film 10. The irradiation amount is, for example, 50 to 500mJ/cm 2 Preferably 100 to 300mJ/cm 2 . The area (irradiation area R shown in fig. 1) of the dicing die bonding film X to be irradiated as a measure of reducing the adhesive force of the adhesive layer 22 is, for example, an area other than the peripheral edge portion of the die bonding film 10 bonding area in the adhesive layer 22.
Next, after the annular frame 41 is attached to the die bonding film 10 among the dicing die bonding films X, the dicing die bonding film X with the semiconductor wafer 30A is fixed to the holding tool 42 of the expanding device as shown in fig. 4 (a).
Next, as shown in fig. 4 (b), the 1 st expansion step (cooling expansion step) is performed under relatively low temperature conditions, the semiconductor wafer 30A is singulated into a plurality of semiconductor chips 31, and the die bonding film 10 of the dicing die bonding film X is separated into small pieces of die bonding film 11, to obtain the semiconductor chips 31 with the die bonding film. In this step, the hollow cylindrical jack member 43 provided in the expanding device is brought into contact with the dicing tape 20 at the lower side in the drawing of the dicing die bonding film X and is lifted up, and the dicing tape 20 to which the dicing die bonding film X of the semiconductor wafer 30A is bonded is expanded in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. The expansion is performed under conditions such that a tensile stress of, for example, 15 to 32Mpa is generated in the dicing tape 20. The temperature conditions in the cooling expansion step are, for example, 0℃or lower, preferably-20 to-5℃and more preferably-15 to-5℃and still more preferably-15 ℃. The expansion speed (the speed at which the jack-up member 43 is raised) in the cooling expansion step is, for example, 0.1 to 100 mm/sec. The expansion amount in the cooling expansion step is, for example, 3 to 16mm.
In this step, the semiconductor wafer 30A is cut at a thin and easily broken portion, and the semiconductor chips 31 are singulated. At the same time, in the die bonding film 10 adhered to the adhesive layer 22 of the dicing tape 20 to be expanded in this step, deformation is suppressed in each region where the semiconductor chips 31 are adhered, and on the other hand, such deformation suppressing action is not generated at the position facing the dividing grooves between the semiconductor chips 31, and in this state, tensile stress generated in the dicing tape 20 acts. As a result, the die bonding film 10 is cut at a position facing the dividing groove between the semiconductor chips 31. After this step, as shown in fig. 4 (c), the jack member 43 is lowered to release the expanded state of the dicing tape 20.
Next, as shown in fig. 5 (a), the 2 nd expansion step is performed under relatively high temperature conditions, so that the distance (separation distance) between the semiconductor chips 31 with the die bonding film is widened. In this step, the hollow cylindrical jack member 43 provided in the expanding device is raised again to expand the dicing tape 20 for dicing the die-bonding film X. The temperature condition in the 2 nd expansion step is, for example, 10℃or higher, preferably 15 to 30 ℃. The expansion speed (the speed at which the jack-up member 43 is raised) in the 2 nd expansion step is, for example, 0.1 to 10 mm/sec. The expansion amount in the 2 nd expansion step is, for example, 3 to 16mm. In this step, the separation distance of the semiconductor chips 31 with the die bonding film is widened to such an extent that the semiconductor chips 31 with the die bonding film can be suitably picked up from the dicing tape 20 by a pickup step described later. After this step, as shown in fig. 5 (b), the jack member 43 is lowered to release the expanded state of the dicing tape 20. In order to reduce the separation distance of the semiconductor chips 31 with the die bonding films on the dicing tape 20 after the release of the expanded state is suppressed, it is preferable to heat and shrink the portion of the dicing tape 20 outside the holding area of the semiconductor chips 31 before the release of the expanded state.
Next, after a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 20 having the semiconductor chips 31 with the die bonding film by using a cleaning liquid such as water as needed, the semiconductor chips 31 with the die bonding film are picked up from the dicing tape 20 (pick-up step) as shown in fig. 6. For example, in the semiconductor chip 31 with the die bonding film as the pickup object, the pin member 44 of the pickup mechanism is lifted up to be lifted up via the dicing tape 20 at the lower side in the drawing of the dicing tape 20, and then suction and holding are performed by the suction jig 45. In the pickup step, the lifting speed of the pin member 44 is, for example, 1 to 100 mm/sec, and the lifting amount of the pin member 44 is, for example, 50 to 3000 μm.
Next, as shown in fig. 7 (a) and 7 (b), the semiconductor chip 31 with the die bonding film is temporarily fixed to the mounting substrate 51. The temporary fixation is performed so that the semiconductor chip 31' or the like on the mounting substrate 51 is embedded in the die bonding film 11 provided on the semiconductor chip 31. Examples of the mounting board 51 include a lead frame, a TAB (tape automated bonding; tape Automated Bonding) film, and a wiring board. The semiconductor chip 31' is fixed to the mounting substrate 51 via the adhesive layer 52. An electrode pad (not shown) of the semiconductor chip 31' and a terminal portion (not shown) of the mounting substrate 51 are electrically connected by a bonding wire 53. As the bonding wire 53, for example, a gold wire, an aluminum wire, or a copper wire can be used. In this step, the semiconductor chip 31' thus wire-bonded and the whole of the bonding wire 53 connected thereto are embedded in the die bonding film 11 provided on the semiconductor chip 31. In this step, the die bonding film 11 may be heated to soften the semiconductor chip 31' and the bonding wire 53 so as to be easily pushed into the die bonding film 11. The heating temperature is a temperature at which the die attach film 11 does not reach a completely thermally cured state, and is, for example, 80 to 140 ℃.
Next, as shown in fig. 7 (c), the die-bonding film 11 is cured by heating (heat curing step). In this step, the heating temperature is, for example, 100 to 200℃and the heating time is, for example, 0.5 to 10 hours. By this step, an adhesive layer is formed by thermally curing the die bonding film 11. The adhesive layer embeds the semiconductor chip 31' (1 st semiconductor chip) mounted on the mounting substrate 51 by wire bonding together with the whole of the bonding wire 53 connected thereto, and bonds the semiconductor chip 31 to the mounting substrate 51.
Next, as shown in fig. 8 a, an electrode pad (not shown) of the semiconductor chip 31 and a terminal portion (not shown) of the mounting substrate 51 are electrically connected by a bonding wire 53 (wire bonding step). The connection between the electrode pad of the semiconductor chip 31 and the bonding wire 53, and the connection between the terminal portion of the mounting board 51 and the bonding wire 53 are achieved by ultrasonic bonding accompanied by heating. The wire heating temperature in wire bonding is, for example, 80 to 250 ℃, and the heating time is, for example, several seconds to several minutes. Such a wire bonding process may be performed before the heat curing process.
Next, as shown in fig. 8 b, a sealing resin 54 for sealing the semiconductor chip 31 and the like on the mounting substrate 51 is formed (sealing step). In this step, the sealing resin 54 is formed by a transfer molding technique using a mold, for example. As a constituent material of the sealing resin 54, for example, an epoxy resin is cited. In this step, the heating temperature for forming the sealing resin 54 is 165 to 185 ℃, for example, and the heating time is 60 seconds to several minutes, for example. When the curing of the sealing resin 54 is not sufficiently performed in this step, a post-curing step for completely curing the sealing resin 54 by further heat treatment is performed after this step. In the post-curing step, the heating temperature is 165 to 185℃for example, and the heating time is 0.5 to 8 hours for example. Even in the case where the die-bonding film 11 is not completely thermally cured in the above-described step with reference to fig. 7 (c), the complete thermal curing of the die-bonding film 11 can be achieved together with the sealing resin 54 in the sealing step and the post-curing step.
In this way, a semiconductor device having a plurality of semiconductor chips mounted in multiple stages can be manufactured. In the present embodiment, the entire semiconductor chip 31' and the bonding wire 52 connected thereto are embedded in the adhesive layer formed by curing the die bonding film 11. In contrast, a part of the semiconductor chip 31 'and the bonding wire 52 connected thereto on the semiconductor chip 31' side may be embedded in the adhesive layer formed by curing the die bonding film 11. In the present embodiment, instead of the wire-bonded semiconductor chip 31', for example, as shown in fig. 9, a flip-chip-mounted semiconductor chip 31' may be used. The semiconductor chip 31 'shown in fig. 9 is electrically connected to the mounting substrate 51 via the bump 55, and the underfill 56 is filled between the semiconductor chip 31' and the mounting substrate 51 and thermally cured. In the semiconductor device shown in fig. 9, the adhesive layer formed by thermally curing the die bonding film 11 embeds the semiconductor chip 31' (the 1 st semiconductor chip) flip-chip mounted on the mounting substrate 51 and bonds the semiconductor chip 31 (the 2 nd semiconductor chip) to the mounting substrate 51.
Fig. 10 and 11 show a part of steps in another embodiment of the method for manufacturing a semiconductor device according to the present invention. In the present embodiment, first, as shown in fig. 10 (a) and 10 (b), the semiconductor chip 31 with the die bonding film is temporarily fixed to the semiconductor chip 31' mounted on the mounting substrate 51 by wire bonding. The semiconductor chip 31' is fixed to the mounting substrate 51 via the adhesive layer 52. An electrode pad (not shown) of the semiconductor chip 31' and a terminal portion (not shown) of the mounting substrate 51 are electrically connected by a bonding wire 53. In this step, the die bonding film 11 covers the connection portion of the bonding wire 53 of the semiconductor chip 31' thus wire-bonded, and a part of the bonding wire 53 is embedded in the die bonding film 11. In this step, the die bonding film 11 may be softened by heating so that the bonding wires 53 are easily pushed into the die bonding film 11. The heating temperature is a temperature at which the die attach film 11 does not reach a completely thermally cured state, and is, for example, 80 to 140 ℃.
Next, as shown in fig. 10 (c), the die-bonding film 11 is cured by heating (heat curing step). In this step, the heating temperature is, for example, 100 to 200℃and the heating time is, for example, 0.5 to 10 hours. By this step, an adhesive layer is formed by thermally curing the die bonding film 11. The adhesive layer covers the connection portion of the bonding wire 53 of the semiconductor chip 31 'mounted on the mounting substrate 51 by wire bonding, and embeds a part of the bonding wire 53, and bonds the semiconductor chip 31 (the 2 nd semiconductor chip) and the semiconductor chip 31' (the 1 st semiconductor chip).
Next, as shown in fig. 11 a, an electrode pad (not shown) of the semiconductor chip 31 and a terminal portion (not shown) of the mounting substrate 51 are electrically connected by a bonding wire 53 (wire bonding step). The connection between the electrode pad of the semiconductor chip 31 and the bonding wire 53, and the connection between the terminal portion of the mounting board 51 and the bonding wire 53 are achieved by ultrasonic bonding accompanied by heating. The wire heating temperature in wire bonding is, for example, 80 to 250 ℃, and the heating time is, for example, several seconds to several minutes. Such a wire bonding process may be performed before the heat curing process described above in this embodiment.
Next, as shown in fig. 11 b, a sealing resin 54 for sealing the semiconductor chips 31 and 31' and the bonding wires 53 on the mounting substrate 51 is formed (sealing step). In this step, the heating temperature for forming the sealing resin 54 is 165 to 185 ℃, for example, and the heating time is 60 seconds to several minutes, for example. In the present step, if the curing of the sealing resin 54 is not sufficiently performed, a post-curing step of completely curing the sealing resin 54 by further heat treatment is performed after the present step. In the post-curing step, the heating temperature is 165 to 185℃for example, and the heating time is 0.5 to 8 hours for example. Even when the die-bonding film 11 is not completely thermally cured in the above-described step with reference to fig. 10 (c), the die-bonding film 11 can be completely thermally cured together with the sealing resin 54 in the sealing step and the post-curing step.
As described above, a semiconductor device having a plurality of semiconductor chips mounted in multiple stages can be manufactured.
In the method for manufacturing a semiconductor device according to the present invention, the wafer thinning process shown in fig. 12 may be performed instead of the wafer thinning process described above with reference to fig. 2 (d). After the above-described process with reference to fig. 2 (c), in the wafer thinning process shown in fig. 12, the wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state where the semiconductor wafer W is held on the wafer processing tape T2, and the semiconductor wafer divided body 30B including the plurality of semiconductor chips 31 and held on the wafer processing tape T2 is formed. In this step, a method (1 st method) of grinding the wafer until the dividing groove 30a itself is exposed on the 2 nd surface Wb side may be adopted, or the following method may be adopted: a method of grinding the wafer from the side of the 2 nd surface Wb to the point of reaching the dividing groove 30a, and then forming a semiconductor wafer divided body 30B by generating a crack between the dividing groove 30a and the 2 nd surface Wb by the pressing force of the rotary grindstone to the wafer (method 2). The depth from the 1 st plane Wa of the dividing groove 30a formed as described above with reference to fig. 2 (a) and 2 (b) is suitably determined according to the method employed. Fig. 12 schematically shows, with a thick line, the divided groove 30a formed by the method 1 or the divided groove 30a formed by the method 2, and cracks connected thereto. The semiconductor wafer segment 30B thus manufactured may be bonded to the dicing die bonding film X instead of the semiconductor wafer 30A, and then the steps described above with reference to fig. 3 to 6 may be performed.
Fig. 13 a and 13B specifically show the 1 st expansion step (cooling expansion step) performed after the semiconductor wafer segment 30B is bonded to the dicing die bonding film X. In this step, the hollow cylindrical jack member 43 provided in the expanding device is brought into contact with the dicing tape 20 at the lower side in the drawing of the dicing die bonding film X and is lifted up, and the dicing tape 20 to which the dicing die bonding film X of the semiconductor wafer dividing body 30B is bonded is expanded in two dimensions along the radial direction and the circumferential direction including the semiconductor wafer dividing body 30B. The expansion is performed under conditions that generate a tensile stress of, for example, 1 to 100Mpa in the dicing tape 20. The temperature conditions in this step are, for example, 0℃or lower, preferably-20 to-5℃and more preferably-15 to-5℃and still more preferably-15 ℃. The expansion speed (the speed at which the jack-up member 43 is raised) in this step is, for example, 1 to 500 mm/sec. The expansion amount in this step is, for example, 50 to 200mm. Through such a cooling expansion process, the die bonding film 10 of the dicing die bonding film X is cut into small pieces of the die bonding film 11, thereby obtaining the semiconductor chips 31 with the die bonding film. Specifically, in this step, the die-bonding film 10 that is in close contact with the adhesive layer 22 of the dicing tape 20 to be expanded is prevented from being deformed in each region where the semiconductor chips 31 of the semiconductor wafer separator 30B are in close contact, but such deformation preventing action is not generated at the position facing the dividing grooves 30a between the semiconductor chips 31, and the tensile stress generated in the dicing tape 20 in this state acts. As a result, the die bonding film 10 is cut at a position facing the dividing groove 30a between the semiconductor chips 31. The semiconductor chip 31 with the die bonding film thus obtained is subjected to the pick-up process described above with reference to fig. 6 and then supplied to the mounting process in the semiconductor device manufacturing process.
In the method for manufacturing a semiconductor device according to the present invention, instead of the above-described structure in which the semiconductor wafer 30A or the semiconductor wafer segment 30B is bonded to the dicing die bonding film X, the semiconductor wafer 30C manufactured in the following manner may be bonded to the dicing die bonding film X.
In the production of the semiconductor wafer 30C, first, as shown in fig. 14 (a) and 14 (b), a modified region 30b is formed in the semiconductor wafer W. The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor devices (not shown) have been mounted on the semiconductor wafer W on the 1 st surface Wa side, and wiring structures and the like (not shown) necessary for the semiconductor devices have been formed on the 1 st surface Wa. In this step, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the 1 st surface Wa side of the semiconductor wafer W, the semiconductor wafer W is irradiated with laser light whose converging point is directed to the inside of the wafer along the pre-dividing line from the side opposite to the wafer processing tape T3 in a state where the semiconductor wafer W is held on the wafer processing tape T3, and the modified region 30b is formed in the semiconductor wafer W by ablation due to multiphoton absorption. The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor chip units. As for a method of forming the modified region 30b on the pre-cut line in the semiconductor wafer by laser irradiation, for example, japanese patent application laid-open No. 2002-192370 is described in detail, and the laser irradiation conditions in the present embodiment are suitably adjusted within the following conditions, for example.
< laser irradiation conditions >
(A) Laser light
(B) Condensing lens
Multiplying power is 100 times or less
NA 0.55
Transmittance to laser wavelength is 100% or less
(C) The movement speed of the stage on which the semiconductor substrate is mounted is 280 mm/sec or less
Next, in a state where the wafer processing tape T3 holds the semiconductor wafer W, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb, whereby as shown in fig. 14 (C), a semiconductor wafer 30C capable of being singulated into a plurality of semiconductor chips 31 is formed (wafer thinning step). The semiconductor wafer 30C fabricated as described above may be bonded to the dicing die bonding film X instead of the semiconductor wafer 30A, and the respective steps described above with reference to fig. 3 to 6 may be performed.
Fig. 15 a and 15 b specifically show the 1 st expansion step (cooling expansion step) performed after the semiconductor wafer 30C is bonded to the dicing die bonding film X. In this step, the hollow cylindrical jack member 43 provided in the expanding device is brought into contact with the dicing tape 20 at the lower side in the drawing of the dicing die bonding film X and is lifted up, and the dicing tape 20 to which the dicing die bonding film X of the semiconductor wafer 30C is bonded is expanded in two dimensions including the radial direction and the circumferential direction of the semiconductor wafer 30C. The expansion is performed under conditions such that a tensile stress of, for example, 1 to 100Mpa is generated in the dicing tape 20. The temperature conditions in this step are, for example, 0℃or lower, preferably-20 to-5℃and more preferably-15 to-5℃and still more preferably-15 ℃. The expansion speed (the speed at which the jack-up member 43 is raised) in this step is, for example, 1 to 500 mm/sec. The expansion amount in this step is, for example, 50 to 200mm. Through such a cooling expansion process, the die bonding film 10 of the dicing die bonding film X is cut into small pieces of the die bonding film 11, thereby obtaining the semiconductor chips 31 with the die bonding film. Specifically, in this step, cracks are formed in the fragile modified region 30b of the semiconductor wafer 30C, and singulation into semiconductor chips 31 occurs. At the same time, in the die bonding film 10 that is in close contact with the adhesive layer 22 of the dicing tape 20 to be expanded in this step, the deformation is suppressed in each region where each semiconductor chip 31 of the semiconductor wafer 30C is in close contact, but such deformation suppressing action is not generated at a position facing the crack formation position of the wafer, and in this state, the tensile stress generated in the dicing tape 20 acts. As a result, the die bonding film 10 is cut at a position opposed to the crack formation position between the semiconductor chips 31. The semiconductor chip 31 with the die bonding film thus obtained is subjected to the pick-up process described above with reference to fig. 6 and then subjected to a mounting process in the semiconductor device manufacturing process.
The inventors found that: for example, in the dicing die-bonding film 10 of the dicing die-bonding film X which can be used in the manufacturing process of the semiconductor device as described above, the above-described constitution in which the yield strength is 15N or less, the breaking strength is 15N or less, and the elongation at break is 40 to 400% in the tensile test performed under the conditions of the initial chuck pitch of 10mm, the 23 ℃ and the tensile speed of 300 mm/min for the die-bonding film test piece having the width of 10mm is suitable for the dicing of the die-bonding film 10 in the dicing scheduled position thereof and the scattering from the dicing tape 20 is suppressed even in the case where the die-bonding film 10 is relatively thick. For example, examples and comparative examples described below are shown.
The above-described structure in which the elongation at break in the above-described tensile test of the die-bonding film 10 is 40 to 400%, preferably 40 to 350%, more preferably 40 to 300%, is considered to be preferable in that the tensile length for cutting the die-bonding film 10 becomes excessively long in the expanding step for avoiding cutting and the die-bonding film 10 is liable to generate ductile fracture rather than brittle fracture. The die-bonding film which is more likely to be subjected to ductile fracture is likely to be subjected to fracture stress in the fracture expanding step to be transmitted to the fracture scheduled position of the film, and thus is likely to be fractured at the fracture scheduled position.
The above-described structure in which the yield strength in the tensile test of the die-bonding film 10 is 15N or less, preferably 12N or less, more preferably 10N or less, and the breaking strength in the same tensile test is 15N or less, preferably 12N or less, more preferably 10N or less is considered to be preferable in terms of suppressing strain energy accumulated in the film during elongation and breaking of the die-bonding film 10 in the breaking expansion step. In the dicing and expanding step, the phenomenon that the die-bonding film is broken in the exposed region (region not covered with the work) and the film pieces are scattered is less likely to occur as the internal accumulated strain energy during the elongation and breaking is smaller.
As described above, when the die bonding film 10 is used in the dicing expansion step in a state of being adhered to the pressure-sensitive adhesive layer 22 side of the dicing tape 20, it is preferable to achieve good dicing and suppress scattering. When the dicing die bonding film X is used in the dicing expansion step, the die bonding film 10 is preferably favorably diced and scattering is suppressed.
The thickness of the die-bonding film 10 is preferably 40 μm or more, more preferably 60 μm or more, and still more preferably 80 μm or more as described above. Such a configuration is preferable in terms of using the die bonding film 10 as an adhesive film for embedding a semiconductor chip or an adhesive film for indirect use of a semiconductor chip in which a bonding wire is partially embedded. The thickness of the die-bonding film 10 is preferably 200 μm or less, more preferably 160 μm or less, and still more preferably 120 μm or less. Such a configuration is preferable in terms of the above-described configuration in which the yield strength, breaking strength, and elongation at break of the die-bonding film 10 are prevented from becoming excessively large, and the yield strength in the tensile test is 15N or less, the breaking strength is 15N or less, and the elongation at break is 40 to 400%.
The viscosity of the die-bonding film 10 in the uncured state at 120 ℃ is preferably 300pa·s or more, more preferably 700pa·s or more, and still more preferably 1000pa·s or more, as described above. The viscosity of the die-bonding film 10 in the uncured state at 120 ℃ is preferably 5000pa·s or less, more preferably 4500pa·s or less, and still more preferably 4000pa·s or less. These configurations of the viscosity and/or the softness of the die attach film 10 in the uncured state are preferable in terms of using the die attach film 10 as an adhesive film for embedding a semiconductor chip or an adhesive film for indirect use of a semiconductor chip in which bonding wires are partially embedded.
When the die-bonding film 10 contains an inorganic filler, the content of the inorganic filler is preferably 10 mass% or more, more preferably 20 mass% or more, and still more preferably 30 mass% or more as described above. The content is preferably 50% by mass or less, more preferably 45% by mass or less, and still more preferably 40% by mass or less. The inorganic filler content in the film for forming an adhesive layer tends to increase, the elongation at break of the film tends to decrease, and the yield strength tends to increase, but this constitution concerning the inorganic filler content in the die bonding film 10 is preferable for suppressing the above-described phenomenon that the film pieces scatter due to breakage in the exposed region (region not covered with the work) of the die bonding film 10.
The die bonding film 10 preferably contains an organic filler, and the content of the organic filler in the die bonding film 10 is preferably 2 mass% or more, more preferably 5 mass% or more, and still more preferably 8 mass% or more. The content of the organic filler in the die-bonding film 10 is preferably 20 mass% or less, more preferably 17 mass% or less, and still more preferably 15 mass% or less. This constitution concerning the organic filler content in the die-bonding film 10 is suitable in controlling the yield strength and breaking strength of the die-bonding film 10 to be within appropriate ranges.
The die-bonding film 10 preferably contains an acrylic resin having a glass transition temperature of-40 to 10 ℃. Such a configuration is preferable in that the die-bonding film 10 is configured to have a yield strength of 15N or less in the tensile test.
Examples (example)
[ example 1 ]
Production of chip bonding film (DAF)
Acrylic resin A 1 (trade name "Teisan Resin SG-708-6", weight average molecular weight 70 ten thousand, glass transition temperature Tg 4 ℃, manufactured by Nagase ChemteX Corporation), 18 parts by mass, 28 parts by mass of epoxy Resin (trade name "KI-3000-4", manufactured by Nippon Kagaku Co., ltd.) and phenol formaldehyde 14 parts by mass of a resin (trade name "LVR8210-DL", manufactured by Rong chemical Co., ltd.), 40 parts by mass of an inorganic filler (trade name "SE-2050MC", silica, average particle diameter of 0.5 μm, manufactured by Admatechs Company), and 0.1 part by mass of an organic catalyst (trade name "TPP-MK", manufactured by North Korea Co., ltd.) as a curing catalyst were added to methyl ethyl ketone and mixed to obtain an adhesive composition. Next, an adhesive composition was applied to the silicone release treated surface of the PET separator (thickness 38 μm) having the silicone release treated surface using an applicator to form an adhesive composition layer. Subsequently, the composition layer was dried by heating at 130℃for 2 minutes to prepare a die-bonding film of example 1 having a thickness of 100 μm on a PET separator. The compositions of the die-bonding films in example 1 and the examples and comparative examples described later are shown in table 1 (in table 1, the units of the numerical values indicating the compositions of the die-bonding films are relative "parts by mass" in the compositions).
Manufacturing of cutting tape
In a reaction vessel equipped with a condenser, a nitrogen inlet, a thermometer and a stirring device, a mixture containing 86.4 parts by mass of 2-ethylhexyl acrylate, 13.6 parts by mass of 2-hydroxyethyl acrylate, 0.2 part by mass of benzoyl peroxide as a polymerization initiator, and 65 parts by mass of toluene as a polymerization solvent was stirred at 61℃under a nitrogen atmosphere for 6 hours (polymerization). Thus, an acrylic polymer P was obtained 1 Is a polymer solution of (a). Next, the acrylic-containing polymer P is contained 1 The mixture of the polymer solution of (2) methacryloxyethyl isocyanate (MOI) and dibutyltin dilaurate as the catalyst for the addition reaction was stirred at 50℃under an air atmosphere for 48 hours (addition reaction). In the reaction solution, the MOI is compounded in an amount relative to the acrylic polymer P 1 100 parts by mass of 14.6 parts by mass of dibutyltin dilaurate to the acrylic polymer P 1 100 parts by mass is 0.5 part by mass. By this addition reaction, an acrylic polymer P having a methacrylate group in a side chain is obtained 2 Is a polymer solution of (a). Then, in the polymerTo the solution, a polymer P was added 2 100 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by TOSOH CORPORATION) and 5 parts by mass of a photopolymerization initiator (trade name "IRGACURE 651", manufactured by BASF corporation) were mixed to obtain an adhesive composition. Next, an adhesive composition was applied to the silicone release treated surface of the PET separator (thickness 38 μm) having the silicone release treated surface using an applicator to form an adhesive composition layer. Subsequently, the composition layer was dried by heating at 120℃for 2 minutes to form an adhesive layer having a thickness of 10. Mu.m, on the PET separator. Then, a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name "FUNCRARE NRB#115", manufactured by GUNZE LIMITED, thickness 115 μm) was bonded to the exposed surface of the pressure-sensitive adhesive layer at room temperature using a laminator. The dicing tape was produced as described above.
Cutting chip bonding film
The chip of example 1 with PET separator was used the bonding film was die cut into a circular shape with a diameter of 330 mm. Then, the PET separator was peeled off from the die bonding film, and after the PET separator was peeled off from the dicing tape, the adhesive layer exposed from the dicing tape was bonded to the surface of the die bonding film exposed by the peeling of the PET separator using a roll laminator. In the bonding, the bonding speed was set to 10 mm/min, the temperature condition was set to 40℃and the pressure condition was set to 0.15MPa. Then, the dicing tape bonded to the die bonding film as described above was die-cut into a circular shape having a diameter of 390mm so that the center of the dicing tape coincides with the center of the die bonding film. Subsequently, ultraviolet rays were irradiated to the adhesive layer of the dicing tape from the EVA base material side. In ultraviolet irradiation, a high-pressure mercury lamp was used to set the cumulative irradiation light amount to 400mJ/cm 2 . In the above manner, the dicing die-bonding film of example 1 having a laminated structure including the dicing tape and the die-bonding film was produced.
[ example 2 ]
Using acrylic resin A 2 (trade name "Teisan Resin SG-70L", weight average molecular weight 90 ten thousand, glass transition temperature Tg of-13 ℃, nagase) ChemteX Corporation) 18 parts by mass of a substituted acrylic resin A 1 A die-bonding film (thickness 100 μm) of example 2 was produced in the same manner as the die-bonding film of example 1 except for 18 parts by mass. A dicing die-bonding film of example 2 was produced in the same manner as the dicing die-bonding film of example 1 except that the die-bonding film of example 2 was used instead of the die-bonding film of example 1.
[ example 3 ]
Using acrylic resin A 3 (trade name "Teisan Resin SG-280", weight average molecular weight 90 ten thousand, glass transition temperature Tg of-29 ℃, manufactured by Nagase ChemteX Corporation) 18 parts by mass instead of acrylic Resin A 1 A die-bonding film (thickness 100 μm) of example 3 was produced in the same manner as the die-bonding film of example 1 except for 18 parts by mass. A dicing die-bonding film of example 3 was produced in the same manner as the dicing die-bonding film of example 1 except that the die-bonding film of example 3 was used instead of the die-bonding film of example 1.
[ example 4 ]
Using acrylic resin A 2 18 parts by mass (trade name "Teisan Resin SG-70L", manufactured by Nagase ChemteX Corporation) in place of the acrylic Resin A 1 A die bonding film (thickness 100 μm) of example 4 was produced in the same manner as in the die bonding film of example 1, except that the mixing amount of the epoxy resin (trade name "KI-3000-4", manufactured by new japanese iron and gold chemical Co., ltd.) was changed to 22 parts by mass instead of 28 parts by mass, the mixing amount of the phenolic resin (trade name "LVR8210-DL", manufactured by grong chemical industry Co., ltd.) was changed to 10 parts by mass instead of 14 parts by mass, and the mixing amount of the inorganic filler (trade name "SE-2050MC", manufactured by Admatechs Company) was changed to 50 parts by mass instead of 40 parts by mass. In addition, a dicing die of example 4 was produced in the same manner as in the dicing die of example 1 except that the die bonding film of example 4 was used instead of the die bonding film of example 1And (3) bonding the films.
[ example 5 ]
A die-bonding film (thickness 100 μm) of example 5 was produced in the same manner as in the die-bonding film of example 1 except that the amount of the inorganic filler (trade name "SE-2050MC", manufactured by Admatechs Company) blended was 30 parts by mass instead of 40 parts by mass, and 10 parts by mass of the organic filler (trade name "Art Pearl J-4PY", polymethyl methacrylate (PMMA), manufactured by the company of the root industry Co., ltd.) was further blended. A dicing die-bonding film of example 5 was produced in the same manner as the dicing die-bonding film of example 1 except that the die-bonding film of example 5 was used instead of the die-bonding film of example 1.
[ example 6 ]
Using acrylic resin A 3 18 parts by mass (trade name "Teisan Resin SG-280", manufactured by Nagase ChemteX Corporation) in place of the acrylic Resin A 1 A die-bonding film (thickness 100 μm) of example 6 was produced in the same manner as in the die-bonding film of example 1 except that the amount of the inorganic filler (trade name "SE-2050MC", manufactured by Admatechs Company) blended was 30 parts by mass instead of 40 parts by mass and 10 parts by mass of the organic filler (trade name "Art Pearl J-4PY", polymethyl methacrylate (PMMA), manufactured by the company of the root industry Co., ltd.) was further blended. A dicing die-bonding film of example 6 was produced in the same manner as the dicing die-bonding film of example 1 except that the die-bonding film of example 6 was used instead of the die-bonding film of example 1.
Example 7
Using acrylic resin A 3 18 parts by mass (trade name "Teisan Resin SG-280", manufactured by Nagase ChemteX Corporation) in place of the acrylic Resin A 1 18 parts by mass, 30 parts by mass of an inorganic filler (trade name "SE-2050MC", manufactured by Admatechs Company) was used instead of 40 parts by mass, and an organic filler (trade name "Art Pearl J-4PY", polymethyl methacrylate (PMMA), manufactured by Gen-Kagaku Co., ltd.) was further blended ) A die-bonding film of example 7 was produced in the same manner as the die-bonding film of example 1 except that 10 parts by mass and a thickness of 200 μm were used instead of 100 μm. A dicing die-bonding film of example 7 was produced in the same manner as the dicing die-bonding film of example 1 except that the die-bonding film of example 7 was used instead of the die-bonding film of example 1.
Comparative example 1
A die-bonding film (thickness 100 μm) of comparative example 1 was produced in the same manner as in the die-bonding film of example 1, except that the amount of epoxy resin (trade name "KI-3000-4", manufactured by new japanese iron and gold chemical Co., ltd.) was changed to 22 parts by mass instead of 28 parts by mass, the amount of phenolic resin (trade name "LVR8210-DL", manufactured by grong chemical industry Co., ltd.) was changed to 10 parts by mass instead of 14 parts by mass, and the amount of inorganic filler (trade name "SE-2050MC", manufactured by Admatechs Company) was changed to 50 parts by mass instead of 40 parts by mass. A dicing die-bonding film of comparative example 1 was produced in the same manner as the dicing die-bonding film of example 1 except that the die-bonding film of comparative example 1 was used instead of the die-bonding film of example 1.
Comparative example 2
Using acrylic resin A 2 (trade name "Teisan Resin SG-70L", manufactured by Nagase ChemteX Corporation) 24 parts by mass instead of the acrylic Resin A 1 A die-bonding film (thickness 100 μm) of comparative example 2 was produced in the same manner as in the die-bonding film of example 1 except that the amount of epoxy resin (trade name "KI-3000-4", manufactured by new japanese iron, co. Ltd.) was changed to 24 parts by mass instead of 28 parts by mass, and the amount of phenolic resin (trade name "LVR8210-DL", manufactured by grong chemical industry co. Ltd.) was changed to 12 parts by mass instead of 14 parts by mass. In addition, a dicing die of comparative example 2 was produced in the same manner as in the dicing die of example 1 except that the die bonding film of comparative example 2 was used instead of the die bonding film of example 1And (3) bonding the films.
[ comparative example 3 ]
A die-bonding film of comparative example 3 was produced in the same manner as the die-bonding film of example 1 except that the thickness was set to 200 μm instead of 100 μm. A dicing die-bonding film of comparative example 3 was produced in the same manner as the dicing die-bonding film of example 1 except that the die-bonding film of comparative example 3 was used instead of the die-bonding film of example 1.
Tensile test of die bonding film
The die-bonding film test pieces (width 10 mm. Times. Length 30 mm) cut out from the die-bonding films of examples 1 to 7 and comparative examples 1 to 3 were subjected to a tensile test using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu corporation) to measure yield strength, breaking strength and breaking elongation. In this tensile test, the initial chuck spacing was 10mm, the temperature conditions were 23℃and the tensile speed was 300 mm/min. The values of the yield strength (N), the breaking strength (N) and the breaking elongation (%) are shown in table 1.
Viscosity measurement of die bonding film
The viscosities at 120℃in the uncured state were measured for the die-bonding films of examples 1 to 7 and comparative examples 1 to 3. Specifically, 0.1g of a sample collected from the die-bonding film was put into a parallel plate (diameter: 20 mm) as a measurement plate, and the melt viscosity (Pa.s) of the sample was measured by a parallel plate method using a rheometer (trade name: RS-1, manufactured by HAAKE). In this measurement, the gap between parallel plates was 0.1mm, the strain rate was 5/sec, the heating rate was 10℃per minute, and the measurement temperature was in the range of 90℃to 150 ℃. The measurement results are shown in Table 1.
Evaluation of the severance and scattering of die bonding film
The following bonding step, the 1 st expansion step (cooling expansion step) for dicing, and the 2 nd expansion step (normal temperature expansion step) for separating were performed using the dicing die bonding films of examples 1 to 7 and comparative examples 1 to 3.
In the bonding step, the semiconductor wafer separator held by the wafer processing tape (trade name "UB-3083D", manufactured by niton corporation) is bonded to the die bonding film which is the dicing die bonding film, and then the wafer processing tape is peeled from the semiconductor wafer separator. In the lamination, a laminator was used, the lamination speed was set to 10 mm/sec, the temperature condition was set to 50 to 80℃and the pressure condition was set to 0.15MPa. The semiconductor wafer divided body is prepared as follows. First, for a bare wafer (diameter 12 inches, thickness 780 μm, manufactured by tokyo chemical Co., ltd.) held together with an endless frame in a wafer processing tape (trade name "V12S-R2-P", manufactured by ridong electric Co., ltd.), dividing grooves (in a lattice shape having a width of 25 μm, a depth of 50 μm, and a division of 6mm×12 mm) for singulation were formed from one surface side of the bare wafer by using a dicing apparatus (trade name "DFD6361", manufactured by DISCO Corporation) using a rotating blade thereof. Next, a wafer processing tape (trade name "UB-3083D", manufactured by niton corporation) was attached to the dividing groove forming surface, and then the wafer processing tape (trade name "V12S-R2-P") was peeled off from the wafer. Then, the wafer was thinned to a thickness of 20 μm by grinding from the other surface (surface not forming the separation groove) side of the wafer using a back grinding apparatus (manufactured by trade name "DGP8760", DISCO Corporation), and then the ground surface was subjected to mirror finishing by dry polishing using the same apparatus. In the above manner, the semiconductor wafer divided bodies (held in the wafer processing tape) are formed. The semiconductor wafer separator includes a plurality of semiconductor chips (6 mm×12 mm).
The cooling expansion step was performed by using a chip separation device (trade name "Die Separator DDS2300", manufactured by DISCO Corporation) and a cooling expansion unit thereof. Specifically, first, a ring-shaped frame made of SUS (manufactured by DISCO Corporation) having a diameter of 12 inches was attached to the dicing tape adhesive layer in the dicing die-bonding film with the semiconductor wafer separator at room temperature. Then, the dicing tape of the dicing die-bonding film with the semiconductor wafer separator is expanded by a cooling expansion unit of the same apparatus, which is provided in the apparatus. In the cooling expansion step, the temperature was-15 ℃, the expansion speed was 300 mm/sec, and the expansion amount was 10mm.
The room temperature expansion step was performed by using a chip separation device (trade name "Die Separator DDS2300", manufactured by DISCO Corporation) using a room temperature expansion unit. Specifically, the dicing tape of the dicing die-bonding film with the semiconductor wafer separator subjected to the cooling and expanding step is expanded by the normal temperature expanding means of the same apparatus. In the room temperature expansion step, the temperature was 23℃and the expansion rate was 1 mm/sec, and the expansion amount was 10mm. Then, the heat shrinkage treatment is applied to the peripheral edge portion of the dicing die-bonding film subjected to the room temperature expansion, which is outside the work attaching area.
After the above-described process of dicing the die-bonding film, the die-bonding film was evaluated as good (o) when the entire region of the line to be diced was diced, and otherwise, as bad (x). After the above-described process using the dicing die bonding film, the scattered die bonding film pieces peeled from the dicing tape and confirmed on the semiconductor wafer were evaluated as defective (x), and otherwise evaluated as good (o). The evaluation results are shown in Table 1.
[ evaluation ]
When the die bonding films of examples 1 to 7 were used, good dicing and scattering suppression were achieved in the expansion step using dicing die bonding films to obtain semiconductor chips with die bonding films.
TABLE 1
/>

Claims (12)

1. A die-bonding film, wherein the die-bonding film test piece having a width of 10mm has a yield strength of 5 to 15N, a breaking strength of 4 to 15N, and an elongation at break of 40 to 400% in a tensile test conducted under conditions of 10mm between initial chucks, 23 ℃ and a tensile speed of 300 mm/min.
2. The die bonding film according to claim 1, which has a thickness of 40 to 200 μm.
3. The die-bonding film according to claim 1, which has a viscosity of 300 to 5000 Pa-s at 120 ℃.
4. The die bonding film according to claim 1, wherein the inorganic filler is contained in a proportion of 10 to 50 mass%.
5. The die bonding film according to claim 1, wherein the organic filler is contained in a proportion of 2 to 20 mass%.
6. The die bonding film according to claim 4, wherein the organic filler is contained in a proportion of 2 to 20 mass%.
7. The die-bonding film according to claim 1, wherein the die-bonding film contains an acrylic resin having a glass transition temperature of-40 to 10 ℃.
8. The die bonding film according to any one of claims 1 to 7, which is used for forming an adhesive layer that embeds a 1 st semiconductor chip wire-bonded on a mounting substrate together with a whole or a part of a bonding wire connected to the 1 st semiconductor chip, and bonds a 2 nd semiconductor chip to the mounting substrate.
9. The die bonding film according to any one of claims 1 to 7, which is used for forming an adhesive layer that covers a bonding wire connection portion of a 1 st semiconductor die mounted on a mounting substrate by wire bonding, embeds a part of the bonding wire, and bonds a 2 nd semiconductor die with the 1 st semiconductor die.
10. The die bonding film according to any one of claims 1 to 7, which is used for forming an adhesive layer embedding a 1 st semiconductor chip flip-chip mounted on a mounting substrate and bonding a 2 nd semiconductor chip with the mounting substrate.
11. A dicing die bonding film, comprising: a dicing tape having a laminated structure including a base material and an adhesive layer; and, a step of, in the first embodiment,
the die-bonding film according to any one of claims 1 to 10, which is releasably adhered to the adhesive layer in the dicing tape.
12. A method for manufacturing a semiconductor device includes the steps of:
a step 1 of bonding a semiconductor wafer capable of being singulated into a plurality of semiconductor chips or a semiconductor wafer separator including a plurality of semiconductor chips to the die bonding film of the dicing die bonding film according to claim 11; and, a step of, in the first embodiment,
and 2. Expanding the dicing tape in the dicing die bonding film to sever the die bonding film and obtain the semiconductor chip with the die bonding film.
CN201810843733.XA 2017-07-28 2018-07-27 Die bonding film, dicing die bonding film, and method for manufacturing semiconductor device Active CN109309039B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017146107A JP7007827B2 (en) 2017-07-28 2017-07-28 Die bond film, dicing die bond film, and semiconductor device manufacturing method
JP2017-146107 2017-07-28

Publications (2)

Publication Number Publication Date
CN109309039A CN109309039A (en) 2019-02-05
CN109309039B true CN109309039B (en) 2023-09-08

Family

ID=65226073

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810843733.XA Active CN109309039B (en) 2017-07-28 2018-07-27 Die bonding film, dicing die bonding film, and method for manufacturing semiconductor device

Country Status (4)

Country Link
JP (1) JP7007827B2 (en)
KR (1) KR102491928B1 (en)
CN (1) CN109309039B (en)
TW (1) TWI789409B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7046585B2 (en) * 2017-12-14 2022-04-04 日東電工株式会社 Adhesive film and adhesive film with dicing tape
JP7389556B2 (en) * 2019-03-04 2023-11-30 日東電工株式会社 dicing die bond film
JP2020145392A (en) * 2019-03-08 2020-09-10 日東電工株式会社 Dicing tape and dicing tape with adhesive film
JP7224231B2 (en) * 2019-04-17 2023-02-17 日東電工株式会社 Dicing die bond film
JP7430039B2 (en) * 2019-06-28 2024-02-09 日東電工株式会社 Dicing tape and dicing die bond film
JP7350534B2 (en) * 2019-06-28 2023-09-26 日東電工株式会社 Dicing tape and dicing die bond film
WO2021084778A1 (en) * 2019-10-28 2021-05-06 昭和電工マテリアルズ株式会社 Film-like adhesive, method for evaluating ease of cutting of same, dicing/die-bonding integrated film, method for manufacturing same, and semiconductor device
FR3103057B1 (en) * 2019-11-08 2021-11-19 Aledia PROCESS FOR PROTECTING AN OPTOELECTRONIC DEVICE AGAINST ELECTROSTATIC DISCHARGES
CN116745903B (en) * 2021-02-03 2024-02-02 住友电木株式会社 Sealing resin composition and semiconductor device

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158276A (en) * 2000-11-20 2002-05-31 Hitachi Chem Co Ltd Adhesive sheet for sticking wafer and semiconductor device
JP2002309065A (en) * 2001-04-10 2002-10-23 Toshiba Chem Corp Die bonding paste
CN101794722A (en) * 2009-01-30 2010-08-04 日本电工株式会社 Dicing tape-integrated wafer back surface protective film
CN101835861A (en) * 2007-12-10 2010-09-15 Lg化学株式会社 Adhesive film, dicing die bonding film and semiconductor device using the same
CN101857778A (en) * 2009-04-08 2010-10-13 日东电工株式会社 Thermosetting die bonding film
JP2013181049A (en) * 2012-02-29 2013-09-12 Hitachi Chemical Co Ltd Film-shaped adhesive, adhesive sheet and semiconductor device
CN103923573A (en) * 2013-01-10 2014-07-16 日东电工株式会社 Adhesive thin film, cutting/chip bonding thin film, manufacturing method for semiconductor device and semiconductor device
CN104946149A (en) * 2014-03-31 2015-09-30 日东电工株式会社 Chip bonding film with cutting disk, semiconductor device, and manufacturing method for semiconductor device
JP2017069560A (en) * 2015-09-30 2017-04-06 日東電工株式会社 Sheet for heat bonding, and sheet for heat bonding with dicing tape

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4876451B2 (en) 2005-06-27 2012-02-15 日立化成工業株式会社 Adhesive sheet
JP4360446B1 (en) * 2008-10-16 2009-11-11 住友ベークライト株式会社 Semiconductor device manufacturing method and semiconductor device
JP5255465B2 (en) 2009-01-29 2013-08-07 古河電気工業株式会社 Wafer processing tape
JP2012023161A (en) 2010-07-14 2012-02-02 Furukawa Electric Co Ltd:The Wafer processing sheet used for semiconductor device manufacturing, manufacturing method of the same and semiconductor device manufacturing method

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158276A (en) * 2000-11-20 2002-05-31 Hitachi Chem Co Ltd Adhesive sheet for sticking wafer and semiconductor device
JP2002309065A (en) * 2001-04-10 2002-10-23 Toshiba Chem Corp Die bonding paste
CN101835861A (en) * 2007-12-10 2010-09-15 Lg化学株式会社 Adhesive film, dicing die bonding film and semiconductor device using the same
CN101794722A (en) * 2009-01-30 2010-08-04 日本电工株式会社 Dicing tape-integrated wafer back surface protective film
CN101857778A (en) * 2009-04-08 2010-10-13 日东电工株式会社 Thermosetting die bonding film
JP2013181049A (en) * 2012-02-29 2013-09-12 Hitachi Chemical Co Ltd Film-shaped adhesive, adhesive sheet and semiconductor device
CN103923573A (en) * 2013-01-10 2014-07-16 日东电工株式会社 Adhesive thin film, cutting/chip bonding thin film, manufacturing method for semiconductor device and semiconductor device
CN104946149A (en) * 2014-03-31 2015-09-30 日东电工株式会社 Chip bonding film with cutting disk, semiconductor device, and manufacturing method for semiconductor device
JP2017069560A (en) * 2015-09-30 2017-04-06 日東電工株式会社 Sheet for heat bonding, and sheet for heat bonding with dicing tape
CN108174617A (en) * 2015-09-30 2018-06-15 日东电工株式会社 Heat engagement sheet material and the heating engagement sheet material with cutting belt

Also Published As

Publication number Publication date
JP2019029465A (en) 2019-02-21
JP7007827B2 (en) 2022-01-25
TWI789409B (en) 2023-01-11
KR102491928B1 (en) 2023-01-27
TW201923868A (en) 2019-06-16
KR20190013519A (en) 2019-02-11
CN109309039A (en) 2019-02-05

Similar Documents

Publication Publication Date Title
CN109309039B (en) Die bonding film, dicing die bonding film, and method for manufacturing semiconductor device
CN109111867B (en) Dicing die bonding film
TWI769242B (en) Sliced Die Stick Film
CN109216211B (en) Dicing tape, dicing die bonding film, and method for manufacturing semiconductor device
CN109148350B (en) Dicing tape-integrated adhesive sheet
JP7046585B2 (en) Adhesive film and adhesive film with dicing tape
TWI786145B (en) Die Tape and Die Bonding Film
TW202035605A (en) Adhesive film, adhesive film with dicing tape and method for manufacturing semiconductor device
TWI814821B (en) Chip-cut die-bonding film and semiconductor device manufacturing method
CN111004588A (en) Dicing die bonding film
JP2019104863A (en) Adhesive film and adhesive film having dicing tape
JP2019104864A (en) Adhesive film and adhesive film having dicing tape
JP7280661B2 (en) Dicing die bond film
CN108728000B (en) Dicing die bonding film
CN111826097B (en) Dicing die bonding film
CN108735650B (en) Dicing die bonding film
CN111748290B (en) Dicing tape with adhesive film
JP7389556B2 (en) dicing die bond film
TWI811452B (en) diced die bonding film
CN111276439A (en) Dicing die bonding film
TW202045660A (en) Dicing tape and dicing tape with adhesive film

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant