CN109309039A - Die bonding film, cutting die bonding film and manufacturing method for semiconductor device - Google Patents

Die bonding film, cutting die bonding film and manufacturing method for semiconductor device Download PDF

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Publication number
CN109309039A
CN109309039A CN201810843733.XA CN201810843733A CN109309039A CN 109309039 A CN109309039 A CN 109309039A CN 201810843733 A CN201810843733 A CN 201810843733A CN 109309039 A CN109309039 A CN 109309039A
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China
Prior art keywords
bonding film
die bonding
cutting
chip
semiconductor
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CN201810843733.XA
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CN109309039B (en
Inventor
宍户雄郎
宍户雄一郎
高本尚英
大西谦司
木村雄大
福井章洋
大和道子
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Nitto Denko Corp
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Nitto Denko Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

It provides and is suitable for realizing in the extension process that carries out using cutting die bonding film and good cutting off and inhibit the die bonding film to disperse, cut die bonding film and manufacturing method for semiconductor device having the semiconductor chip of die bonding film in order to obtain.Yield strength in die bonding film (10) of the invention, the tension test that carries out under conditions of initial chuck spacing 10mm, 23 DEG C and tensile speed 300mm/ minutes for the die bonding film test film of width 10mm is 15N or less, breaking strength is 15N hereinafter, and elongation at break is 40~400%.

Description

Die bonding film, cutting die bonding film and manufacturing method for semiconductor device
Technical field
The present invention relates to the die bonding film being able to use in the manufacturing process of semiconductor device and cutting chip engagements Film and manufacturing method for semiconductor device.
Background technique
In the manufacturing process of semiconductor device, the size with chip engagement is comparable Nian Jie thin with chip in order to obtain The semiconductor chip of film, the semiconductor chip for having die bonding film, sometimes using cutting die bonding film.Cut core Chip bonding film has size corresponding with the semiconductor crystal wafer as processing object, such as includes comprising substrate and adhesive The cutting belt of layer；The strippingly closely sealed die bonding film in its adhesive phase side.
As using cutting die bonding film to obtain one of the method for semiconductor chip with die bonding film, Know the side via the process for die bonding film being cut off for being extended to the cutting belt in cutting die bonding film Method.In this method, firstly, semiconductor crystal wafer of the fitting as workpiece on the die bonding film of cutting die bonding film. The semiconductor crystal wafer for example with later with die bonding film cut off cut off together and can monolithic turn to multiple semiconductor cores The mode of piece is processed.Then, in order to closely sealed in semiconductor core respectively to be generated by the die bonding film in cutting belt The mode of multiple adhering film small pieces of on piece cuts off the die bonding film, expands the cutting belt for cutting die bonding film It opens up (the extension process cut off).In the extension process, semiconductor crystal wafer on die bonding film is engaged with chip Film cuts off also to generate at the corresponding position in position and cut off, on cutting die bonding film or cutting belt, semiconductor crystal wafer quilt Monolithic turns to multiple semiconductor chips.Then, after such as cleaning process, each semiconductor chip with and its closely sealed size The pin component that mechanism is picked together with the comparable die bonding film of chip is jacked up from the downside of cutting belt, then, from cutting It takes and is picked.It so, it is possible to obtain the semiconductor chip of microarray strip bonding film.This has the semiconductor of die bonding film Chip is fixed on the adherends such as installation base plate by its die bonding film by chip engagement.About being related to such as The technology of the cutting die bonding film and die bonding film wherein included that use like that above, such as be recorded in following special In sharp document 1~3.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2007-2173 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2010-177401 bulletin
Patent document 3: Japanese Unexamined Patent Publication 2012-23161 bulletin
Summary of the invention
Problems to be solved by the invention
For being wanted as a composition as described above for cutting off the cutting die bonding film used in extension process The die bonding film of element, it is desirable that suitably cut off in the extension process in cutting off predetermined position.Additionally, there are chips to connect The thickness of conjunction film is bigger, is more difficult to generate such tendency cut off.
As described above to cut off in extension process, the die bonding film in cutting die bonding film did not had in the past There is the region of fitting workpiece, die bonding film piece occurs sometimes from dispersing in cutting belt.In addition, there is die bonding film Thickness is bigger, is more easy to happen the tendency dispersed.This of die bonding film piece disperses sometimes as the pollution original of workpiece Cause, it is not preferable.
The present invention is found out in view of above such situation, its purpose is to provide: it is suitable for having core in order to obtain The semiconductor chip of chip bonding film and using cutting die bonding film carry out extension process in realize good cut off simultaneously Inhibit the die bonding film to disperse, cutting die bonding film and manufacturing method for semiconductor device.
The solution to the problem
1st scheme according to the present invention, provides die bonding film.It is the die bonding film, for width 10mm The drawing that die bonding film test film carries out under conditions of initial chuck spacing 10mm, 23 DEG C and tensile speed 300mm/ minutes The yield strength (power needed for reaching yield point) in test is stretched for 15N hereinafter, (it is made to be broken institute with the breaking strength in test The power needed) it is 15N hereinafter, and with the elongation at break in test (before the length of elongated portion when fracture is relative to elongation The ratio of length) it is 40~400%.In addition, in the present invention, the preferred 12N or less of aforementioned yield strength, more preferable 10N are hereinafter, preceding State the preferred 12N or less of breaking strength, more preferable 10N hereinafter, aforementioned elongation at break preferably 40~350%, it is more preferable 40~ 300%.The die bonding film of this composition can be used in partly leading in the case where being sealed at the form of adhesive phase side of cutting belt The semiconductor chip with die bonding film is obtained in the manufacturing process of body device.
In the manufacturing process of semiconductor device, as described above, the semiconductor chip of die bonding film is had in order to obtain, Sometimes implement the extension process cut off carried out using cutting die bonding film.The inventors of the present invention's discovery, for as cutting For cutting the die bonding film of a constituent element of die bonding film, the die bonding film of width 10mm is tested The surrender in tension test that piece carries out under conditions of initial chuck spacing 10mm, 23 DEG C and tensile speed 300mm/ minutes is strong Even if degree is 15N or less, the above-mentioned composition that breaking strength is 15N or less and elongation at break is 40~400% connects in the chip In the case that conjunction film is thicker, for the die bonding film in extension process, it is also suitable for that this is made to cut off predetermined position production Life is cut off and is inhibited from dispersing in cutting belt.For example, shown in Examples and Comparative Examples as be described hereinafter.
Think that the elongation at break in this die bonding film, above-mentioned tension test is 40~400%, preferably 40 ~350%, more preferably above-mentioned composition as 40~300% is suitable for avoiding in extension process for cutting off chip engagement The tensile elongation of film becomes excessive and is easy that the die bonding film is made to generate ductile rupture rather than brittle fracture.Extend process In, it is easy to produce the die bonding film of ductile rupture, is cut off predetermined to cutting off for the film with the easier conduction of stress Therefore position is easy to be cut off cutting off predetermined position.
Think yield strength in this die bonding film, above-mentioned tension test be 15N or less, preferably 12N or less, More preferable 10N or less and breaking strength are that 15N or less, preferably 12N or less, more preferable 10N above-mentioned composition below are suitable for inhibiting It is cutting off with the strain being accumulated in the elongation process of the die bonding film in extension process and fracture process inside the film Energy.It extends in process, the small die bonding film of the inside accumulation strain energy more in elongation process and fracture process is more not easy It generates in the exposed area (not by region that workpiece covers) fracture and diaphragm the phenomenon that dispersing.
As described above, the die bonding film of the 1st scheme of the invention is in the adhesive phase side to be sealed at cutting belt When form is for cutting off with extension process, it is adapted for carrying out and good cut off and inhibit to disperse.
Preferably 40 μm or more, more preferable 60 μm of the thickness of this die bonding film or more, more preferable 80 μm or more.This structure At use this die bonding film as the 1st semiconductor chip that is installed on wire bonding on installation base plate with and the 1st The whole or part of the closing line of semiconductor chip connection embeds together and engages the 2nd semiconductor chip on installation base plate It is suitable in terms of the adhering film (the thick adhering film of semiconductor chip embedding) of adhesive layer formation.Alternatively, with The related this composition of the thickness of die bonding film use this die bonding film as covering wire bonding be installed on installation The closing line link position of the 1st semiconductor chip on substrate and by the closing line a part embedding and in the 1st semiconductor core On piece engage the 2nd semiconductor chip adhesive layer formation adhering film (carried out closing line be partially embedded partly lead The thick adhering film of body chip chamber engagement) in terms of be suitable.Alternatively, the structure related with the thickness of die bonding film At using this die bonding film as flip-chip is installed on installation base plate the 1st semiconductor chip embedding and pacifying Fill the adhering film (the thick adhering film of chip embedding) for the adhesive layer formation that the 2nd semiconductor chip is engaged on substrate Aspect is suitable.In addition, the thickness of this die bonding film is preferably 200 μm or less, is more preferably 160 μm or less, is more excellent It is selected as 120 μm or less.This yield strength, breaking strength, elongation at break for avoiding this die bonding film that be formed in becomes Yield strength excessive, in the above-mentioned tension test of realization is 15N or less, breaking strength is 15N or less and elongation at break is 40 The aspect of above-mentioned composition as~400% is preferred.
Viscosity when this die bonding film in the uncured state 120 DEG C is preferably 300Pas or more, more preferably For 700Pas or more, more preferably 1000Pas or more.When this die bonding film in the uncured state 120 DEG C Viscosity is preferably 5000Pas or less, more preferably 4500Pas or less, more preferably 4000Pas or less.It is connect with chip Related these of viscosity for closing film, which are formed in, to be used this die bonding film as being used to form and has carried out semiconductor chip, connects It is suitable in terms of the above-mentioned various thick adhering films of the adhesive layer of the embedding of zygonema.
This die bonding film preferably comprises inorganic filler, and the content of the inorganic filler in this die bonding film is preferably 10 mass % or more, more preferably 20 mass % or more, more preferably 30 mass % or more.In addition, this die bonding film contains Having inorganic filler content when inorganic filler is preferably 50 mass % or less, more preferably 45 mass % or less, more preferably 40 Quality % or less.Inorganic filler content in adhesive layer formation film more increases, and has the elongation at break of the film to become Smaller tendency and yield strength becomes bigger tendency, still, related with the inorganic filler content in this die bonding film This composition inhibit this die bonding film exposed area (not by workpiece cover region) fracture and diaphragm fly It is suitable in terms of dissipating such above-mentioned phenomenon.
This die bonding film preferably comprises organic filler, the content of the organic filler in this die bonding film preferably 2 Quality % or more, more preferable 5 mass % or more, more preferable 8 mass % or more.In addition, this die bonding film contains organic fill out Organic filler content when material be preferably 20 mass % or less, more preferably 17 mass % or less, more preferably 15 mass % with Under.This composition related with the organic filler content in this die bonding film by the yield strength of this die bonding film and Breaking strength control is suitable in terms of proper range.
This die bonding film preferably comprises the acrylic resin that glass transition temperature is -40~10 DEG C.This structure It is in terms of the yield strength in above-mentioned tension test is the such above-mentioned composition of 15N or less in this die bonding film of realization Suitable.
2nd scheme according to the present invention, provides cutting die bonding film.The cutting die bonding film has: cutting The said chip bonding film of band and the 1st scheme of the invention.Cutting belt has the stepped construction comprising substrate and adhesive phase. Die bonding film is in a manner of it can remove and the adhesive phase of cutting belt is closely sealed.The chip for having the 1st scheme of the invention connects This cutting die bonding film of film is closed when for cutting off with extension process, it is good suitable for realizing die bonding film Cut off and inhibit to disperse.
According to the 3rd scheme of invention, manufacturing method for semiconductor device is provided.The manufacturing method for semiconductor device includes as follows The 1st process and the 2nd process.Chip engagement in 1st process, in the cutting die bonding film of the 2nd scheme of the invention Fitting energy monolithic turns to the semiconductor crystal wafer of multiple semiconductor chips or the semiconductor die comprising multiple semiconductor chips on film Circle dividing body.In 2nd process, by being extended to the cutting belt in cutting die bonding film, to chip be engaged thin Film, which is cut off, obtains the semiconductor chip with die bonding film.Including using the chip for having the 1st scheme of the invention to connect The 2nd process for closing the cutting die bonding film progress of film is to cut off to use this manufacturing method for semiconductor device of extension process suitable It good cut off in realizing die bonding film in the extension process and inhibits to disperse.
Detailed description of the invention
Fig. 1 is the schematic cross-section of the cutting die bonding film of an embodiment of the invention.
Fig. 2 indicates a part of process in the manufacturing method for semiconductor device of an embodiment of the invention.
Fig. 3 indicates a part of process in the manufacturing method for semiconductor device of an embodiment of the invention.
Fig. 4 indicates a part of process in the manufacturing method for semiconductor device of an embodiment of the invention.
Fig. 5 indicates a part of process in the manufacturing method for semiconductor device of an embodiment of the invention.
Fig. 6 indicates a part of process in the manufacturing method for semiconductor device of an embodiment of the invention.
Fig. 7 indicates a part of process in the manufacturing method for semiconductor device of an embodiment of the invention.
Fig. 8 shows a part of processes in the manufacturing method for semiconductor device of an embodiment of the invention.
Fig. 9 indicates a part of process in the manufacturing method for semiconductor device of an embodiment of the invention.
Figure 10 indicates a part of process in the manufacturing method for semiconductor device of an embodiment of the invention.
Figure 11 indicates a part of process in the manufacturing method for semiconductor device of an embodiment of the invention.
Figure 12 indicates a part of process in the manufacturing method for semiconductor device of an embodiment of the invention.
Figure 13 indicates a part of process in the manufacturing method for semiconductor device of an embodiment of the invention.
Figure 14 indicates a part of process in the manufacturing method for semiconductor device of an embodiment of the invention.
Figure 15 indicates a part of process in the manufacturing method for semiconductor device of an embodiment of the invention.
Description of symbols
X cuts die bonding film
10,11 die bonding films
20 cutting belts
21 substrates
22 adhesive phases
W, 30A, 30C semiconductor crystal wafer
30B semiconductor crystal wafer dividing body
30a slot segmentation
30b modification area
31 semiconductor chips
Specific embodiment
Fig. 1 is the schematic cross-section of the cutting die bonding film X of an embodiment of the invention.Cut chip engagement Film X has the stepped construction of the die bonding film 10 comprising an embodiment of the invention and cutting belt 20.Cutting belt 20 have the stepped construction comprising substrate 21 and adhesive phase 22.Adhesive phase 22 has adhesive surface in 10 side of die bonding film 22a.Die bonding film 10 is sealed at the adhesive phase 22 or its adhesive surface 22a of cutting belt 20 in a manner of it can remove.Cutting Die bonding film X can be used for obtaining in the manufacture of semiconductor device the mistake of the semiconductor chip with die bonding film In for example aftermentioned such extension process in journey.In addition, cutting die bonding film X has the system of size and semiconductor device The corresponding circular plate shape of the semiconductor crystal wafer as workpiece during making, in the range of diameter is for instance in 345~380mm In the range of (12 inch wafers correspond to type), 245~280mm (18 in the range of (8 inch wafers correspond to type), 495~530mm Inch wafer corresponds to type) or 195~230mm in the range of (6 inch wafers correspond to type).
Cutting the die bonding film 10 in die bonding film X has and can use as heat cured chip engagement is shown The composition that bonding agent plays a role.For die bonding film 10, as resin component, can have comprising thermosetting resin and The composition of thermoplastic resin, it is possible to have comprising with the heat that can react and generate the heat-curable functional group being bonded with curing agent The composition of plastic resin.It, should when die bonding film 10 has the composition comprising the thermoplastic resin with heat-curable functional group Die bonding film 10 need not also include thermosetting resin.This die bonding film 10 can have single layer structure, can also Different multilayered structures is formed in adjacent interlayer to have.
There is the thermosetting property tree when composition comprising thermosetting resin and thermoplastic resin as die bonding film 10 Rouge, for example, epoxy resin, phenolic resin, amino resins, unsaturated polyester resin, polyurethane resin, organosilicon tree Rouge and thermoset polyimide resin.Die bonding film 10 can contain a kind of thermosetting resin, can also contain there are two types of with Upper thermosetting resin.Epoxy resin is due to having the corrosion that may become the semiconductor chip as chip coalesced object Ionic impurity etc. poor tendency, therefore be preferred as the thermosetting resin in die bonding film 10.Separately Outside, as making epoxy resin show heat cured curing agent, preferably phenolic resin.
As epoxy resin, for example: bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenation are double Phenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol novolak type, ortho cresol novolak type, trihydroxy phenyl first Alkane type, four hydroxy phenyl ethane types, hydantoins type, triglycidyl isocyanurate type and glycidyl amine type asphalt mixtures modified by epoxy resin Rouge.Phenol novolak type epoxy resin, o-cresol phenolic epoxy varnish, biphenyl type epoxy resin, trihydroxy phenyl Methane type epoxy resin and four hydroxy phenyl ethane type epoxy resin are imbued with the reactivity with the phenolic resin as curing agent, and And therefore excellent heat resistance is preferred as the epoxy resin in die bonding film 10.
It as the phenolic resin that can be played a role as the curing agent of epoxy resin, such as can enumerate: novolaks The polycarboxylated styrenes such as type phenolic resin, resol type phenol resin and poly(4-hydroxystyrene).As novolak type phenol tree Rouge, for example: phenol resol resins, phenol aralkyl resin, cresol novolac resin, tert-butyl phenol phenol Novolac resin and nonyl phenol novolac resin.Die bonding film 10 can contain a kind of phenolic resin as asphalt mixtures modified by epoxy resin The curing agent of rouge can also contain curing agent of the two or more phenolic resin as epoxy resin.Phenol resol resins, Phenol aralkyl resin is viscous with can be improved this when being used as the curing agent as the epoxy resin of chip engagement bonding agent The tendency of the connection reliability of agent is connect, is preferred as the hardener for epoxy resin in die bonding film 10 therefore.
When die bonding film 10 is containing epoxy resin and as the phenolic resin of its curing agent, with the hydroxyl in phenolic resin Base phase is preferably the ratio of 0.5~2.0 equivalent, more preferably 0.8~1.2 equivalent for 1 equivalent of epoxy group in epoxy resin It is compounded two resins.Fill the curing reaction of the epoxy resin and phenolic resin when this solidification for being formed in die bonding film 10 It is preferred for dividing the aspect carried out.
For the content ratio of the thermosetting resin in die bonding film 10, from making, die bonding film 10 is appropriate to be showed Out as the function of heat curable adhesive from the perspective of, preferably 5~60 mass %, more preferably 10~50 mass %.
Thermoplastic resin in die bonding film 10 plays such as binder function, has as die bonding film 10 Thermoplastic resin when composition comprising thermosetting resin and thermoplastic resin, for example: acrylic resin, day Right rubber, butyl rubber, isoprene rubber, neoprene, vinyl-vinyl acetate copolymer, ethylene-acrylic acid copolymer Object, vinyl-acrylate copolymer, polybutadiene, polycarbonate resin, thermoplastic polyimide resin, 6- nylon, 6, The saturation such as the polyamides such as 6- nylon, phenoxy resin, polyethylene terephthalate, polybutylene terephthalate (PBT) Polyester resin, polyamide-imide resin and fluororesin.Die bonding film 10 can contain a kind of thermoplastic resin, can also be with Contain two or more thermoplastic resins.Acrylic resin since ionic impurity is few and heat resistance is high, as chip Thermoplastic resin in bonding film 10 is preferred.
In acrylic resin when die bonding film 10 contains acrylic resin as thermoplastic resin, preferably The content of monomeric unit in terms of mass ratio from (methyl) acrylate is most." (methyl) acrylic acid " refers to " acrylic acid " And/or " methacrylic acid ".
For being used to form (methyl) acrylate of the monomeric unit of acrylic resin, i.e. as acrylic resin Composition monomer (methyl) acrylate, for example, (methyl) alkyl acrylate, (methyl) acrylate base Ester and (methyl) benzyl acrylate.As (methyl) alkyl acrylate, for example: the first of (methyl) acrylic acid Ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, amyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2- Ethylhexyl, different monooctyl ester, nonyl ester, last of the ten Heavenly stems ester, isodecyl ester, hendecane base ester, dodecyl ester (i.e. Lauryl Ester), tridecyl Ester, tetradecane base ester, cetyl ester, stearyl and eicosane base ester.As (methyl) acrylate base ester, example It can such as enumerate: the ring pentyl ester and cyclohexyl of (methyl) acrylic acid.As (methyl) benzyl acrylate, for example, (methyl) phenyl acrylate and (methyl) benzyl acrylate.As the composition monomer of acrylic resin, a kind of (first can be used Base) acrylate, two or more (methyl) acrylate also can be used.In addition, acrylic resin can be by that will use It is obtained in the starting monomer polymerization for forming it.As polymerization, for example, polymerisation in solution, emulsion polymerization, ontology Polymerization and suspension polymerisation.
It, can will be with (methyl) acrylate for acrylic resin, such as in order to improve its cohesive force, heat resistance One or more kinds of other monomers of copolymerization are as composition monomer.As such monomer, for example: contain carboxyl Monomer, hydroxyl monomer, contains epoxy based monomers, monomer containing sulfonic group, phosphorous acid-based monomers, acrylamide and third at anhydride monomers Alkene nitrile.As carboxyl group-containing monomer, for example: acrylic acid, methacrylic acid, (methyl) carboxyethyl acrylates, (first Base) acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid and crotonic acid.As anhydride monomers, for example: Malaysia Acid anhydrides and itaconic anhydride.As hydroxyl monomer, for example: (methyl) acrylic acid 2- hydroxy methacrylate, (methyl) propylene Sour 2- hydroxy propyl ester, (methyl) acrylic acid 4- hydroxybutyl, the own ester of (methyl) acrylic acid 6- hydroxyl, (methyl) acrylic acid 8- hydroxyl Monooctyl ester, (methyl) acrylic acid 10- hydroxyl last of the ten Heavenly stems ester, (methyl) acrylic acid 12- hydroxylauric ester and (methyl) acrylic acid (4- hydroxyl first Butylcyclohexyl) methyl esters.As epoxy based monomers are contained, for example, (methyl) glycidyl acrylate and (methyl) propylene Acid methyl ethylene oxidic ester.As monomer containing sulfonic group, for example: styrene sulfonic acid, allyl sulphonic acid, 2- (methyl) Acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid and (methyl) propane sulfonic acid.As phosphoric acid Base monomer, for example, 2- hydroxyethyl acryloyl phosphate.
For die bonding film 10, from the viewpoint of realizing high cohesion, include in die bonding film 10 third Olefin(e) acid resinoid is preferably the copolymer of butyl acrylate Yu ethyl acrylate and acrylonitrile.
When die bonding film 10 has the composition comprising the thermoplastic resin with heat-curable functional group, as the thermoplastic Property resin, can be used for example acrylic resin containing heat-curable functional group.It is used to form this and contains heat-curable functional group's acrylic acid In the acrylic resin of resinoid, the content of the monomeric unit preferably in terms of mass ratio from (methyl) acrylate is most It is more.As such (methyl) acrylate, can be used for example and as the acrylic compounds contained in die bonding film 10 Same (methyl) acrylate of above-mentioned (methyl) acrylate of the composition monomer of resin.On the other hand, as being used to form The heat-curable functional group of the acrylic resin containing heat-curable functional group, for example, glycidyl, carboxyl, hydroxyl and Isocyanate group.Wherein it is possible to be suitable for using glycidyl and carboxyl.That is, as the tree of acrylic compounds containing heat-curable functional group Rouge can be suitable for using resinoid containing glycidyl acrylic, carboxylic acrylic resin.In addition, according to thermosetting is contained Property functional group acrylic resin in heat-curable functional group type, select the curing agent that can be reacted.Containing thermosetting Property functional group acrylic resin heat-curable functional group when being glycidyl, as curing agent, can be used with as ring The same phenolic resin of above-mentioned phenolic resin of oxygen resin curing agent.
For carrying out die bonding film 10 before curing for chip engagement, in order to realize a degree of crosslinking Degree, for example, it is preferable to will be anti-with the functional group of molecule chain end of above-mentioned resin component that includes in die bonding film 10 etc. The multi-functional compounds for answering and being bonded are compounded in advance in die bonding film formation resin combination as crosslinking agent.This Sample is formed in the aspect for making die bonding film 10 improve adhesion properties at high temperature and the improvement side for seeking heat resistance Face is suitable.As such crosslinking agent, for example: polyisocyanate compound.As polyisocyanates chemical combination Object, for example: toluene di-isocyanate(TDI), methyl diphenylene diisocyanate, paraphenylene diisocyanate, 1,5- naphthalene two are different The addition product of cyanate and polyalcohol and diisocyanate.For the crosslinking in die bonding film formation resin combination Agent content, relative to 100 mass parts of resin with the above-mentioned functional group that can be reacted and be bonded with the crosslinking agent, from raising institute's shape At die bonding film 10 cohesive force from the perspective of, more than preferably 0.05 mass parts, be formed by chip from raising From the perspective of the bonding force of bonding film 10, preferably 7 below the mass.In addition, as the friendship in die bonding film 10 Join agent, other multi-functional compounds such as epoxy resin can be applied in combination with polyisocyanate compound.
The above-mentioned acrylic resin being compounded in die bonding film 10 and above-mentioned acrylic compounds containing heat-curable functional group tree The glass transition temperature of rouge is preferably -40~10 DEG C.About the glass transition temperature of polymer, can be used based on following The glass transition temperature (theoretical value) that Fox formula is found out.Fox formula is in the glass transition temperature Tg and the polymer of polymer Each composition monomer homopolymer glass transition temperature Tg i relational expression.In following Fox formulas, Tg indicates the glass of polymer Glass transition temperature (DEG C), Wi indicate to constitute the weight fraction of the monomer i of the polymer, the glass of the homopolymer of Tgi expression monomer i Glass transition temperature (DEG C).About the glass transition temperature of homopolymer, literature value, such as " new peak molecular library 7 can be used Coating is got started with synthetic resin " (Bei Gang association three writes, macromolecule publishing house, nineteen ninety-five), " acrylate catalogue (1997 years Version) " glass transition temperatures of various homopolymers is listed in (Mitsubishi Rayon Co., Ltd).On the other hand, about monomer The glass transition temperature of homopolymer can also be asked by the method specifically recorded in Japanese Unexamined Patent Publication 2007-51271 bulletin Out.
Fox formula 1/ (273+Tg)=Σ [Wi/ (273+Tgi)]
Die bonding film 10 can contain filler.It is thin from adjustment chip engagement that filler is compounded in die bonding film 10 It is preferred in terms of the physical property such as elasticity modulus, yield strength, the elongation at break of film 10.As filler, can enumerate inorganic Filler and organic filler.Filler can have the various shapes such as spherical, needle-shaped, sheet.In addition, die bonding film 10 can contain There is a kind of filler, two or more fillers can also be contained.
As the constituent material of above-mentioned inorganic filler, for example: aluminium hydroxide, magnesium hydroxide, calcium carbonate, carbonic acid Magnesium, calcium silicates, magnesium silicate, calcium oxide, magnesia, aluminium oxide, aluminium nitride, aluminium borate whisker, boron nitride, crystalline silica, And amorphous silica.As the constituent material of inorganic filler, the metal simple-substances such as aluminium, gold, silver, copper, nickel can also be enumerated, closed Gold, amorphous carbon, graphite etc..The content of inorganic filler when die bonding film 10 is containing inorganic filler preferably 10 mass % Above, more preferable 20 mass % or more, more preferable 30 mass % or more.In addition, the content preferably 50 mass % or less, more preferably 45 mass % or less, more preferable 40 mass % or less.
As the constituent material of above-mentioned organic filler, for example, polymethyl methacrylate (PMMA), polyamides are sub- Amine, polyamidoimide, polyether-ether-ketone, polyetherimide and polyesterimide.When die bonding film 10 contains organic filler The organic filler content preferably 2 mass % or more, more preferable 5 mass % or more, more preferable 8 mass % or more.In addition, should Content preferably 20 mass % or less, more preferable 17 mass % or less, more preferable 15 mass % or less.
Preferably 0.005~10 μm of the average grain diameter of filler when die bonding film 10 is containing filler, more preferable 0.05 ~1 μm.The average grain diameter of the filler is that 0.005 μm or more such is formed in realizes die bonding film 10 for semiconductor It is suitable in terms of the high wettabilities of the adherends such as wafer, cementability.The average grain diameter of the filler is 10 μm or less such It is suitable for being formed in terms of so that die bonding film 10 is obtained sufficient filler additive effect and is ensured heat resistance.Filler Average grain diameter the particle size distribution meter (trade name " LA-910 ", Horiba Ltd's system) of luminosity formula can be used for example It finds out.
Die bonding film 10 can contain thermal curing catalyst.Thermal curing catalyst is compounded in die bonding film 10 For making the curing reaction of resin component sufficiently carry out, improve curing reaction speed to be excellent in the solidification of die bonding film 10 Choosing.As such thermal curing catalyst, for example: imidazole compound, triphenylphosphine based compound, amine system Close object and three haloboranes based compounds.As imidazole compound, for example: 2-methylimidazole, 2- undecyl Imidazoles, 2- heptadecyl imidazole, DMIZ 1,2 dimethylimidazole, 2-ethyl-4-methylimidazole, 2- phenylimidazole, 2- phenyl -4- methyl Imidazoles, 1 benzyl 2 methyl imidazole, 1- benzyl -2- phenylimidazole, 1- cyano ethyl -2-methylimidazole, 1- cyano ethyl -2- Undecyl imidazole, 1- cyano ethyl -2- phenylimidazole trimellitate, 2,4- diamino -6- [2 '-methylimidazolyls - (1 ')]-ethyl-s-triazine, 2,4- diamino -6- [2 '-undecyl imidazole base-(1 ')]-ethyl-s-triazine, 2,4- diamino Base -6- [2 '-ethyls -4 '-methylimidazolyl-(1 ')]-ethyl-s-triazine, 2,4- diamino -6- [2 '-methylimidazolyls - (1 ')]-ethyl-s-triazine isocyanuric acid adduct, 2- phenyl -4,5- bishydroxymethyl imidazoles and 2- phenyl -4- methyl -5- hydroxyl Ylmethyl imidazoles.As triphenylphosphine based compound, for example: triphenylphosphine, three (butyl phenyl) phosphines, three are (to first Base phenyl) phosphine, three (nonyl phenyl) phosphines, diphenylmethyl Phenylphosphine, 4-phenyl phosphonium bromide, three phenyl-bromide Phosphonium of first base, methyl three Ben Ji phosphonium chloride, methoxymethyl triphenylphosphonium phosphonium chloride and benzyltriphenyl phosphonium phosphonium chloride.Further include in triphenylphosphine based compound There is the compound of triphenylphosphine structure and triphenyl borine alkyl structure simultaneously.As such compound, for example: four Ben Ji Phosphonium tetraphenylborate, four ptolylboronic acid ester of tetraphenylphosphoniphenolate, Bian base triphenyl phosphonium tetraphenylborate and triphenyl Phosphine triphenylborane.As amine compound, for example, monoethanolamine trifluoro borate and dicyandiamide.It is halogenated as three Borine based compound, for example, three chloroboranes.Die bonding film 10 can contain a kind of thermal curing catalyst, can also To contain two or more thermal curing catalysts.
Die bonding film 10 can according to need containing one or more kinds of other compositions.As this other at Point, for example, fire retardant, silane coupling agent and ion capturing agent.As fire retardant, for example, three oxidations Antimony, antimony pentaoxide and brominated epoxy resin.As silane coupling agent, for example: β-(3,4- epoxycyclohexyl) ethyl Trimethoxy silane, γ-glycidoxypropyltrime,hoxysilane and γ-glycidoxypropyl diethoxy silicon Alkane.As ion capturing agent, for example: hydrotalcite, bismuth hydroxide, oxidizing aqueous antimony (such as East Asia synthesize strain formula " IXE-300 " of commercial firm), basic zirconium phosphate (such as " IXE-100 " of Toagosei Co., Ltd), the magnesium silicate of specific structure (such as " KYOWAAD 600 " of Kyowa Chemical Industry Co., Ltd) and alumina silicate (such as Kyowa Chemical Industry Co., Ltd " KYOWAAD 700 " of system).The compound that complex compound can be formed between metal ion is also used as ion capturing agent. As such compound, for example: three azole compounds, four azole compounds and bipyridyl based compound.Wherein, From the viewpoint of the stability of the complex compound formed between metal ion, preferably three azole compounds.As such three Azole compounds, for example: 1,2,3- benzotriazole, 1- { bis- (2- ethylhexyl) amino methyls of N, N- } benzo three Azoles, carboxyl benzotriazole, 2- (2- hydroxy-5-methyl base phenyl) benzotriazole, 2- (2- hydroxyl -3,5- di-tert-butyl-phenyl) -5- Chlorobenzotriazole, 2- (2- hydroxyl -3- tert-butyl -5- aminomethyl phenyl) -5- chlorobenzotriazole, 2- (two tertiary pentyl of 2- hydroxyl -3,5- Phenyl) benzotriazole, 2- (2- hydroxyl -5- t-octyl phenyl) benzotriazole, 6- (2 benzotriazole) -4- t-octyl -6 '-tertiary fourth Base -4 '-methyl -2,2 '-methylene bis-phenol, 1- (2,3- dihydroxypropyl) benzotriazole, 1- (1,2- dicarboxyl diethyl) benzene And triazole, 1- (2- ethylhexylamino methyl) benzotriazole, bis- tertiary pentyl -6- of 2,4- { (H- benzotriazole -1- base) methyl } Phenol, 2- (2- hydroxyl -5- tert-butyl-phenyl) -2H- benzotriazole, octyl -3- [3- tertiary butyl-4-hydroxy -5- (the chloro- 2H- of 5- Benzotriazole -2- base) phenyl] propionic ester, 2- ethylhexyl -3- [3- tertiary butyl-4-hydroxy -5- (the chloro- 2H- benzotriazole-of 5- 2- yl) phenyl] propionic ester, 2- (2H- benzotriazole-2- base)-6- (1- methyl-1-phenylethyl)-4- (1,1,3,3- tetramethyl Butyl) phenol, 2- (2H- benzotriazole -2- base) -4-TBP, 2- (2- hydroxy-5-methyl base phenyl) benzotriazole, 2- (2- hydroxyl -5- t-octyl phenyl)-benzotriazole, 2- (3- tert-butyl -2- hydroxy-5-methyl base phenyl) -5- chlorobenzotriazole, 2- (2- hydroxyl -3,5- di-tert-pentyl-phenyl) benzotriazole, 2- (2- hydroxyl -3,5- di-tert-butyl-phenyl) chloro- benzotriazole of -5-, 2- [2- hydroxyl -3,5- two (1,1- dimethyl benzyl) phenyl] -2H- benzotriazole, 2,2 '-di-2-ethylhexylphosphine oxides [6- (2H- benzo three Azoles -2- base) -4- (1,1,3,3- tetramethyl butyl) phenol], (2- [bis- (bis (alpha, alpha-dimethylbenzyl) base) phenyl of 2- hydroxyl -3,5-] - 2H- benzotriazole and methyl -3- [3- (2H- benzotriazole -2- base) -5- tert-butyl-hydroxy phenyl] propionic ester.In addition, right The specific hydroxy-containing compounds such as diphenol compounds, hydroxy-anthraquione compound, polyphenolic substance are also used as ion-catching Agent.As such hydroxy-containing compounds, specifically, can enumerate: 1,2- benzenediol, anthrarufin, tannin, is not eaten alizarin Sub- acid, gallicin and pyrogallol.
Preferably 40 μm or more, more preferable 60 μm of the thickness of die bonding film 10 or more, more preferable 80 μm or more.In addition, Preferably 200 μm or less, more preferable 160 μm of the thickness of this die bonding film or less, more preferable 120 μm or less.
For die bonding film 10, for width 10mm die bonding film test film in initial chuck spacing The yield strength in tension test carried out under conditions of 10mm, 23 DEG C and tensile speed 300mm/ minutes is 15N or less, preferably 12N or less, more preferable 10N or less.At the same time, breaking strength of the die bonding film 10 in same test is 15N or less, excellent Select 12N or less, more preferable 10N or less.At the same time, elongation at break of the die bonding film 10 in same test be 40~ 400%, preferably 40~350%, more preferable 40~300%.It, can about the yield strength, breaking strength and elongation at break It is measured with using cupping machine (trade name " Autograph AGS-J ", Shimadzu Scisakusho Ltd's system).In addition, core The adjustment of the yield strength of chip bonding film 10, breaking strength and elongation at break can pass through the nothing in die bonding film 10 The control of machine filler and/or the compounding amount of organic filler, the vitrifying of above-mentioned acrylic resin in die bonding film 10 Control of transition temperature etc. carries out.
Viscosity when 120 DEG C under the uncured state of die bonding film 10 is preferably 300Pas or more, more preferably For 700Pas or more, more preferably 1000Pas or more.In addition, 120 DEG C under the uncured state of die bonding film 10 When viscosity be preferably 5000Pas or less, more preferably 4500Pas or less, more preferably 4000Pas or less.
The above such die bonding film 10 is in 23 DEG C of temperature, 180 ° of peel angle and tensile speed 300mm/ minutes Under the conditions of disbonded test in, 180 ° of peel adhesions of such as 0.3~20N/10mm are shown relative to SUS plane.It is this It is suitable in terms of being formed in the holding for ensuring the workpiece based on cutting die bonding film X and/or its die bonding film 10.
The substrate 21 of cutting belt 20 in cutting die bonding film X is thin in cutting belt 20 and/or cutting chip engagement The element to play a role in film X as supporter.It can be suitable for making that substrate 21, which is, for example, plastic basis material as the plastic basis material, Use plastic film.As the constituent material of plastic basis material, for example: polyolefin, polyurethane, polycarbonate, gathers polyester Ether ether ketone, polyimides, polyetherimide, polyamide, fully aromatic polyamide, polyvinyl chloride, Vingon, polyphenylene sulphur Ether, aromatic polyamides, fluororesin, cellulose-based resin and organic siliconresin.As polyolefin, for example: low-density Polyethylene, straight-chain low density polyethylene (LDPE), medium density polyethylene, high density polyethylene (HDPE), ultra-low density polyethylene, random copolymerization are poly- Propylene, block copolymerization polypropylene, homopolypropylene, polybutene, polymethylpentene, vinyl-vinyl acetate copolymer, ionomer Resin, ethylene-(methyl) acrylic copolymer, ethylene-(methyl) acrylate copolymer, ethylene-butene copolymer and ethylene- Hexene copolymer.As polyester, for example: polyethylene terephthalate, polyethylene naphthalate and poly- Mutual-phenenyl two acid bromide two alcohol ester.Substrate 21 can be formed of one material, and can also be formed by two or more materials.Substrate 21 It can have single layer structure, it is possible to have multilayered structure.Adhesive phase 22 on substrate 21 is ultraviolet light as described later When curability, substrate 21 preferably has ultraviolet light permeability.In addition, can be tensionless winkler foundation when substrate 21 is made of plastic film Film, or single axle drawn membrane, or biaxially oriented film.
Cutting belt 20 and/or substrate 21 are shunk for example, by local heating when using cutting die bonding film X In the case where, substrate 21 preferably has heat-shrinkable.In addition, when substrate 21 is made of plastic film, from make cutting belt 20 and/ Or from the aspect of substrate 21 realizes isotropic heat-shrinkable, substrate 21 is preferably biaxially oriented film.Cutting belt 20 and/ Or the thermal contraction heated in test that substrate 21 carries out under conditions of 100 DEG C and heating treatment time 60 seconds of heating temperature Rate is preferably 2~30%, more preferably 2~25%, more preferably 3~20%, more preferably 5~20%.The percent thermal shrinkage is Refer to the percent thermal shrinkage in the so-called direction MD and at least one of the percent thermal shrinkage in the so-called direction TD.
The surface of 22 side of adhesive phase in substrate 21 can be implemented for improving and the object of the adaptation of adhesive phase 22 Reason processing, chemical treatment or primary coat processing.As physical treatment, for example: sided corona treatment, corona treatment, spray Sand working process, ozone exposure processing, fire exposure processing, high-voltage electric shock exposure treatment and the processing of ionizing irradiation line.As Chemical treatment, for example, chromic acid is handled.
From ensuring for playing substrate 21 as cutting belt 20 and/or cutting supporter in die bonding film X From the perspective of the intensity of function is such, the thickness of substrate 21 is preferably 40 μm or more, more preferably 50 μm or more, is more preferably 55 μm or more, more preferably 60 μm or more.In addition, from making cutting belt 20 and/or cutting scratching for die bonding film X realization appropriateness Property it is such from the perspective of, the thickness of substrate 21 is preferably 200 μm or less, more preferably 180 μm or less, be more preferably 150 μm Below.
The adhesive phase 22 of cutting belt 20 contains adhesive.The adhesive can be to be made in cutting die bonding film X With in the process can by intentionally reducing the adhesive (bonding force can reduce type adhesive) of bonding force from external effect, It is also possible to the bonding force in the use process for cutting die bonding film X not drop because from external effect nearly or completely Low adhesive (the non-reduced type adhesive of bonding force).For using, bonding force can reduce type adhesive or bonding force is non-reduced Type adhesive, can be according to use cutting die bonding film X to carry out singualtion half as the adhesive in adhesive phase 22 Method, condition of the singualtion of conductor chip etc. cut the usage mode of die bonding film X to be suitable for selection.
When using bonding force that can reduce type adhesive as the adhesive in adhesive phase 22, in cutting die bonding film In the use process of X, can have and show the state of opposite high adhesion using adhesive phase 22 and show opposite with distinguishing The state of power low-adhesive.For example, will cutting die bonding film X when being used in aftermentioned extension process, in order to inhibit/prevent core The high adhesion state for floating, removing and utilizing adhesive phase 22 of 10 autoadhesion oxidant layer 22 of chip bonding film, on the other hand, After it, for picking up the semiconductor chip with die bonding film from the cutting belt 20 of cutting die bonding film X In aftermentioned pickup process, for ease of picking up the semiconductor chip for having die bonding film from adhesive phase 22, it can use The power state low-adhesive of adhesive phase 22.
Type adhesive can be reduced as such bonding force, for example, in the use of cutting die bonding film X It can make its cured adhesive (radiation curing adhesive), thermal expansion type adhesive by irradiation with radiation in the process Deng.In the adhesive phase 22 of present embodiment, a kind of bonding force, which can be used, can reduce type adhesive, also can be used two kinds with On bonding force can reduce type adhesive.Furthermore it is possible to the entirety that type adhesive forms adhesive phase 22 can be reduced by bonding force, A part that type adhesive forms adhesive phase 22 can also be reduced by bonding force.For example, there is single layer in adhesive phase 22 When structure, the entirety that type adhesive forms adhesive phase 22 can be reduced by bonding force, type can also can be reduced by bonding force Adhesive formed mixture layer 22 in predetermined portion (for example, middle section of the attaching subject area as workpiece), by bonding The non-reduced type adhesive of power forms other positions (for example, for the attaching subject area of ring frame and the outside in centrally located region Region).In addition, can reduce type adhesive when adhesive phase 22 has multilayered structure by bonding force and form multilayer knot All layers of structure can also can be reduced a part of layer that type adhesive is formed in multilayered structure by bonding force.
As the radiation curing adhesive for adhesive phase 22, for example, passing through electron ray, ultraviolet Line, alpha ray, β ray, gamma-rays or X-ray irradiation and cured type adhesive, can be particularly suitablely using logical Ultraviolet light is crossed to irradiate and the adhesive (ultraviolet-curing adhesive) of cured type.
As the radiation curing adhesive for adhesive phase 22, for example, containing viscous as acrylic compounds The radiation of the functional groups such as the base polymers such as the acrylic polymer of mixture and carbon-to-carbon double bond with radiation polymerism The radiation curing adhesive of the monomer component of polymerism, the addition type of oligomer ingredient.
For above-mentioned acrylic polymer, the monomeric unit of (methyl) acrylate is originated from preferably in terms of mass ratio Content is most.As (methyl) acrylate for the monomeric unit for being used to form acrylic polymer, i.e. as acrylic compounds (methyl) acrylate of the composition monomer of polymer, for example: (methyl) alkyl acrylate, (methyl) acrylic acid Cycloalkyl ester and (methyl) benzyl acrylate, more specifically, can enumerate and be related to for die bonding film 10 third Same (methyl) acrylate of above-mentioned (methyl) acrylate of olefin(e) acid resinoid.Composition list as acrylic polymer Body can be used a kind of (methyl) acrylate, two or more (methyl) acrylate also can be used.As acrylic compounds The composition monomer of polymer, can preferably enumerate 2-EHA and lauryl acrylate.In addition, from adhesive phase is made 22 suitably show the fundamental characteristics such as adhesiveness brought by (methyl) acrylate in terms of set out, acrylic polymer Composition monomer entirety in (methyl) acrylate ratio be preferably 40 mass % or more, more preferably 60 mass % with On.
For acrylic polymer in order to improve such as its cohesive force, heat resistance, can also include in composition monomer can be with (first Base) acrylic ester copolymer one or more kinds of other monomers.As such monomer, for example: contain carboxyl Monomer, hydroxyl monomer, contains epoxy based monomers, monomer containing sulfonic group, phosphorous acid-based monomers, acrylamide and third at anhydride monomers Alkene nitrile, more specifically, can enumerate be related to it is same for the above-mentioned monomer of acrylic resin of die bonding film 10 Co-polymerized monomer.
Acrylic polymer may include that be originated from can be with (methyl) to form cross-linked structure in its polymer backbone The monomeric unit of the multi-functional monomer of the monomer components such as acrylate copolymerization.As such multi-functional monomer, such as can To enumerate: hexylene glycol two (methyl) acrylate, (poly-) ethylene glycol two (methyl) acrylate, two (methyl) third of (poly-) propylene glycol Olefin(e) acid ester, neopentyl glycol two (methyl) acrylate, pentaerythrite two (methyl) acrylate, trimethylolpropane tris (methyl) Acrylate, pentaerythrite three (methyl) acrylate, dipentaerythritol six (methyl) acrylate, poly epihydric alcohol base (first Base) acrylate, polyester (methyl) acrylate and carbamate (methyl) acrylate." (methyl) acrylate " refers to " acrylate " and/or " methacrylate ".As the composition monomer of acrylic polymer, can be used a kind of multifunctional Property monomer, also can be used two or more multi-functional monomers.Show adhesive phase 22 suitably by (methyl) third The aspect of the fundamental characteristics such as olefin(e) acid ester bring adhesiveness, the multi-functional list of acrylic polymer constituted in monomer entirety The ratio of body is preferably 40 mass % or less, more preferably 30 mass % or less.
The starting monomer for being used to form it can polymerize by acrylic polymer to be obtained.As polymerization, such as It can enumerate: polymerisation in solution, emulsion polymerization, bulk polymerization and suspension polymerisation.It is engaged from using cutting belt 20 and/or cutting chip From the perspective of the spatter property of height in the manufacturing method for semiconductor device of film X, preferably cutting belt 20 and/or cutting chip The low molecular weight substance in adhesive phase 22 in bonding film X is less, and the number-average molecular weight of acrylic polymer is preferably 100000 or more, 200,000~3,000,000 are more preferably.
Adhesive phase 22 and/or its adhesive is used to form in order to improve the base polymers such as acrylic polymer Number-average molecular weight, such as external crosslinker can be contained.As for being reacted with base polymers such as acrylic polymers The external crosslinker for forming cross-linked structure, can enumerate: polyisocyanate compound, epoxide, polyol compound, nitrogen Third acridine compound and melamine series crosslinking agent.Adhesive phase 22 and/or the external crosslinker being used to form in its adhesive Content relative to 100 mass parts of base polymer be preferably 5 below the mass, more preferably 0.1~5 mass parts.
As being used to form the above-mentioned radiation polymerizable monomer ingredient of radiation curing adhesive, such as can lift Out: carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) propylene Acid esters, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol six (methyl) acrylate and 1,4- butanediol two (methyl) acrylate.As being used to form the upper of radiation curing adhesive State radiation polyreactive oligomers ingredient, for example: carbamate system, polyether system, Polyester, it is polycarbonate-based, The substance of the various oligomer such as polybutadiene system, molecular weight 100~30000 or so is suitable.Radiation curing adhesive In the monomer component of radiation polymerism, the total content of oligomer ingredient can make the bonding force for being formed by adhesive phase 22 It is appropriate reduce in the range of determine, relative to 100 mass parts of the base polymers such as acrylic polymer, preferably 5~500 Mass parts, more preferably 40~150 mass parts.In addition, the radiation curing adhesive as addition type, can be used for example Substance disclosed in Japanese Unexamined Patent Application 60-196956 bulletin.
As the radiation curing adhesive for adhesive phase 22, such as can also enumerate containing base polymer Inherent type radiation curing adhesive, the base polymer is in polymer lateral chain, main polymer chain, main polymer chain end Hold the functional groups such as the carbon-to-carbon double bond with radiation polymerism.The radiation curing adhesive of such inherence type is inhibiting It is formed by the undesirable ongoing change of adhesion characteristic caused by the movement as low molecular weight compositions in adhesive phase 22 Aspect be suitable.
As the base polymer contained in the radiation curing adhesive of inherent type, preferably by acrylic polymer As basic framework.As the acrylic polymer for forming such basic framework, above-mentioned acrylic can be used Object.As the method for the carbon-to-carbon double bond for importing radiation polymerism to acrylic polymer, for example, such as lower section Method: the starting monomer copolymerization comprising the monomer with defined functional group (the 1st functional group) is made to obtain acrylic polymer Afterwards, make have can with react between the 1st functional group and the defined functional group (the 2nd functional group) being bonded and radiation polymerization Property carbon-to-carbon double bond compound maintain carbon-to-carbon double bond radiation polymerism in the state of with acrylic polymer carry out Condensation reaction or addition reaction.
As the combination of the 1st functional group and the 2nd functional group, for example: carboxyl and epoxy group, epoxy group and carboxylic Base, carboxyl and '-aziridino, '-aziridino and carboxyl, hydroxyl and isocyanate group, isocyanate group and hydroxyl.These combinations In, from the viewpoint of the easiness of reactive tracing, the preferably combination of hydroxyl and isocyanate group, isocyanate group and hydroxyl Combination.In addition, having the technical difficulty of the polymer of isocyanate group with high reactivity high due to making, from acrylic compounds From the perspective of the easy degree of production or the acquisition of polymer, above-mentioned 1st functional group of more preferable acrylic polymer side The case where for hydroxyl and above-mentioned 2nd functional group is isocyanate group.In this case, as having radiation polymerism carbon-simultaneously The isocyanate compound of carbon double bond and the isocyanate group as the 2nd functional group, the unsaturation i.e. containing radiation polymerism The isocyanate compound of functional group, for example: methacryloyl isocyanate, 2- methacryloxyethyl Isocyanates (MOI) and isopropenyl-bis (alpha, alpha-dimethylbenzyl) based isocyanate.
Radiation curing adhesive for adhesive phase 22 preferably comprises Photoepolymerizationinitiater initiater.Cause as photopolymerization Agent, for example: α -one alcohol based compound, acetophenone based compound, benzoin ether based compound, ketal based compound, Aromatic sulfonyl based compound, photolytic activity oxime compound, benzophenone based compound, thioxanthones based compound, camphorquinone, Halogenated ketone, acylphosphine oxide and acyl phosphonate.As α -one alcohol based compound, for example: 4- (2- '-hydroxyethoxy Base) phenyl (2- hydroxyl -2- propyl) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, 2- methyl -2- hydroxypropiophenonepreparation and 1- hydroxyl Cyclohexyl-phenyl ketone.As acetophenone based compound, for example: methoxyacetophenone, 2,2- dimethoxy -1,2- bis- Diphenylphosphino ethane-1- ketone, 2,2- diethoxy acetophenone and 2- methyl-1-[4- (methyl mercapto)-phenyl]-2- morpholino propane-1. As benzoin ether based compound, for example: benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl Ether.As ketal based compound, for example, benzil dimethyl ketal.As aromatic sulfonyl based compound, example 2- naphthalene sulfonyl chloride can such as be enumerated.As photolytic activity oxime compound, for example, for example, 1- phenyl -1,2- propanedione - 2- (O- ethoxy carbonyl) oxime.As benzophenone based compound, for example: benzophenone, benzoyl benzoic acid And 3,3 '-dimethyl -4- methoxy benzophenone.As thioxanthones based compound, for example: thioxanthones, 2- diuril Ton ketone, 2- methyl thioxanthones, 2,4- dimethyl thioxanthone, isopropyl thioxanthone, bis- clopenthixal ketone of 2,4-, 2,4- diethyl thioxanthene Ketone and 2,4- diisopropylthioxanthone.The content of the Photoepolymerizationinitiater initiater in radiation curing adhesive in adhesive phase 22 It is, for example, 0.05~20 mass parts relative to 100 mass parts of the base polymers such as acrylic polymer.
For adhesive phase 22 above-mentioned thermal expansion type adhesive be containing by heating foamed, expand at Divide the adhesive of (foaming agent, heat-expandable microsphere etc.).As foaming agent, various inorganic system's foaming agents and organic system can be enumerated Foaming agent.As heat-expandable microsphere, the object for gasifying and expanding is easy by heating for example, being sealed in shell The microballoon of the composition of matter.As inorganic system's foaming agent, for example: ammonium carbonate, ammonium hydrogen carbonate, sodium bicarbonate, nitrous acid Ammonium, sodium borohydride and Azide species.As organic system foaming agent, for example: trichlorofluoromethane, dichloro list fluorine first The azo compounds such as the chlorofluorinations such as alkane alkane, azodiisobutyronitrile, azodicarbonamide, barium azodicarboxylate, to toluene sulphur The hydrazines system chemical combination such as hydrazides, diphenyl sulfone -3,3 '-disulfonyl hydrazide, 4,4 '-oxygroups bis- (benzene sulfonyl hydrazides), allyl bis- (sulfohydrazides) The semicarbazides based compounds, morpholinyl -1,2 5- such as object, p-toluenesulfonyl semicarbazides, 4,4 '-oxygroups bis- (benzenesulfonamido- ureas), Three azole compounds and the N such as the thio triazole of 3,4-, N '-dinitrosopentamethylene tetramine, N, N '-dimethyl-N, N '-two The N- nitroso based compound such as nitroso terephthalamide.As be used to form heat-expandable microsphere as described above, it is logical It crosses heating and is easy substance that is vaporization and expanding, for example: iso-butane, propane and pentane.By using coacervation, Interfacial polymerization etc. makes to be easy to make thermal expansivity in the enclosed shell forming material of substance that is vaporization and expanding by heating Microballoon.As shell forming material, can be used show hot melt property substance, can because enclose substance thermal expansion effect due to The substance of rupture.As such substance, for example: vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyethylene Butyral, polymethyl methacrylate, polyacrylonitrile, Vingon and polysulfones.
As the non-reduced type adhesive of above-mentioned bonding force, for example: first passing through irradiation with radiation in advance makes to be related to gluing Resultant force can reduce adhesive, the Pressuresensitive Adhesive of form etc. of the above-mentioned radiation curing adhesive curing of type adhesive. For radiation curing adhesive, the type and content of component of polymer are contained according to it, though line via radiation solidification and Also the adhesiveness due to the component of polymer can be shown in the case where reducing bonding force, can play can be used for defined Usage mode bonding keeps the bonding force of adherend.In the adhesive phase 22 of present embodiment, it is non-that a kind of bonding force can be used The non-reduced type adhesive of two or more bonding forces also can be used in reduction type adhesive.Furthermore it is possible to non-reduced by bonding force Type adhesive forms the entirety of adhesive phase 22, and one of adhesive phase 22 can also be formed by the non-reduced type adhesive of bonding force Point.For example, when adhesive phase 22 has single layer structure the whole of adhesive phase 22 can be formed by the non-reduced type adhesive of bonding force Body, as described above, the predetermined portion that can also be formed by the non-reduced type adhesive of bonding force in adhesive phase 22 is (for example, be ring The region in the outside of the attaching subject area of shape frame and the attaching subject area in wafer), type bonding can be reduced by bonding force Dosage form is at other positions (for example, middle section of the attaching subject area as wafer).In addition, adhesive phase 22 has multilayer When structure, all layers of multilayered structure can be formed by the non-reduced type adhesive of bonding force, it can also be by the non-reduced type of bonding force Adhesive forms a part of layer in multilayered structure.
On the other hand, as the Pressuresensitive Adhesive for adhesive phase 22, can be used for example acrylic Acrylic adhesives, elastomeric adhesive of the object as basic polymer.Adhesive phase 22 is made containing acrylic adhesives When for Pressuresensitive Adhesive, in the acrylic polymer as the base polymer of the acrylic adhesives, preferably with matter The content that amount ratio meter is originated from the monomeric unit of (methyl) acrylate is most.As such acrylic polymer, such as It can enumerate and be related to the above-mentioned acrylic polymer of radiation curing adhesive.
It adhesive phase 22 and/or is used to form in its adhesive, other than above-mentioned each ingredient, can also contain crosslinking Colorants such as promotor, tackifier, anti-aging agent, pigment, dyestuff etc..Colorant can be the change coloured by irradiation with radiation Close object.As such compound, such as leuco dye can be enumerated.
The thickness of adhesive phase 22 is preferably 1~50 μm, more preferably 2~30 μm, more preferably 5~25 μm.It is such It is formed in when for example adhesive phase 22 includes radiation curing adhesive and obtains the adhesive phase 22 before and after radiation curing It is suitable in terms of the balance of bonding force relative to die bonding film 10.
It can for example be manufactured as follows with above such cutting die bonding film X constituted.
In the production for cutting the die bonding film 10 of die bonding film X, firstly, preparing the formation of die bonding film 10 After adhesive composite, the composition is coated on defined slider and forms adhesive composite layer.As isolation Body, for example: polyethylene terephthalate (PET) film, polyethylene film, polypropylene film and use fluorine The removers such as series stripping agent or chain alkyl acrylate series stripping agent have carried out plastic film, the stationery etc. of surface coating.Make For the coating method of adhesive composite, for example: roll coating, silk screen coating and rotogravure application.Then, viscous for this Agent composition layer is connect, is made it dry as needed by heating, in addition, crosslinking reaction as needed.Heating temperature is for example It is 70~160 DEG C, heating time is, for example, 1~5 minute.As above operation can make above-mentioned core in the form of with slider Chip bonding film 10.
It, can be by the way that adhesive phase be arranged on the substrate 21 of preparation about the cutting belt 20 of cutting die bonding film X 22 make.Such as the substrate 21 of resin can be by calendering film method, the casting method in organic solvent, enclosed system The film-forming methods such as inflation extrusion molding, T mould extrusion molding, coetrusion, dry lamination method make.To after film film and/or Substrate 21 is surface-treated as defined in implementing as needed.In the formation of adhesive phase 22, such as prepare adhesive phase formation After adhesive composition, the composition is coated with first on substrate 21 or on defined slider and forms adhesive composition Layer.As the coating method of adhesive composition, for example, the coating of roll coating, silk screen and rotogravure application.Then, for The adhesive composition layer is made it dry as needed by heating, in addition, crosslinking reaction as needed.Heating temperature example For example 80~150 DEG C, heating time is, for example, 0.5~5 minute.When being formed with adhesive phase 22 on slider, this is had The adhesive phase 22 of slider is fitted on substrate 21, removes slider later.Production has substrate 21 and adhesive phase as a result, The above-mentioned cutting belt 20 of 22 stepped construction.
In the production for cutting die bonding film X, then, for example crimps and be bonded in 22 side of adhesive phase of cutting belt 20 Die bonding film 10.Binding temperature is, for example, 30~50 DEG C, and preferably 35~45 DEG C.Laminate pressure (line pressure) is for example, 0.1~20kgf/cm, preferably 1~10kgf/cm.Adhesive phase 22 includes radiation curing adhesive as described above In the case of, ultraviolet light israds can be irradiated to adhesive phase 22 before the fitting, it can also be after the fitting from substrate 21 Ultraviolet light israds is irradiated to adhesive phase 22 in side.Alternatively, in the manufacturing process of cutting die bonding film X, it can not be into This irradiation with radiation of row is (in this case, in cutting die bonding film X use process adhesive phase 22 can radiate Line solidification).When adhesive phase 22 is ultraviolet-curing adhesive layer, for making the cured ultraviolet irradiation amount of adhesive phase 22 For example, 50~500mJ/cm2, preferably 100~300mJ/cm2.It to carry out in cutting die bonding film X as adhesive phase 22 bonding force reduces the region (irradiation area R) of the irradiation of measure for example as shown in Figure 1, being that chip in adhesive phase 22 connects Close the region in addition to its peripheral part in film adhered region.
Operation as described above can make cutting die bonding film X.For cutting die bonding film X, Ke Yi 10 side of die bonding film is at least to cover the prominent form slider (illustration omitted) of die bonding film 10.With cutting belt 20 Adhesive phase 22 compared to die bonding film 10 be to exist not to be bonded die bonding film 10 in small size and adhesive phase 22 Region when, for example, it is also possible at least to cover the prominent form slider of die bonding film 10 and adhesive phase 22.Isolation Body is for being protected so that the element that die bonding film 10, adhesive phase 22 will not expose, is connect using cutting chip It is stripped from the film when closing film X.
Fig. 2 is to Fig. 8 shows the manufacturing method for semiconductor device of an embodiment of the invention.
In this manufacturing method for semiconductor device, firstly, as shown in (a) of Fig. 2 and (b) of Fig. 2, on semiconductor crystal wafer W It is formed slot segmentation 30a (slot segmentation formation process).Semiconductor crystal wafer W has the 1st face Wa and the 2nd face Wb.Semiconductor crystal wafer W's The 1st face side Wa has been mounted with various semiconductor elements (illustration omitted) and has formd the semiconductor on the 1st face Wa Wire structures needed for element etc. (illustration omitted).In this process, it is bonded in the wafer processing band T1 that there will be adhesive surface T1a After the 2nd face side Wb of semiconductor crystal wafer W, wafer process with band T1 on maintain semiconductor crystal wafer W in the state of, partly The 1st face side Wa of semiconductor wafer W forms the slot segmentation 30a of prescribed depth using rotating blades such as cutter devices.Slot segmentation 30a is For making semiconductor crystal wafer W be separated into the gap of semiconductor core blade unit, (Fig. 2 schematically shows slot segmentation with thick line into Fig. 4 30a)。
Then, as shown in (c) of Fig. 2, the wafer processing of adhesive surface T2a have to use with T2 to semiconductor crystal wafer W's The fitting in the 1st face side Wa and wafer processing with T1 from the removing of semiconductor crystal wafer W.
Then, as shown in (d) of Fig. 2, passed through certainly in wafer processing in the state of maintaining semiconductor crystal wafer W on band T2 Semiconductor crystal wafer W is thinned to defined thickness (wafer thinning process) by the grinding that the 2nd face Wb rises.Grinding can make It is carried out with the abrasive machining device for having grinding grinding stone.By the wafer thinning process, being formed in present embodiment can monolithic Turn to the semiconductor crystal wafer 30A of multiple semiconductor chips 31.Semiconductor crystal wafer 30A specifically has in the wafer the 2nd The face side Wb will be singulated the position (interconnecting piece) of the position connection for multiple semiconductor chips 31.In semiconductor crystal wafer 30A The distance between the 2nd face side the Wb front end of thickness, i.e. the 2nd face Wb of semiconductor crystal wafer 30A and slot segmentation 30a of interconnecting piece example For example 1~30 μm, preferably 3~20 μm.
Then, as shown in (a) of Fig. 3, the die bonding film 10 of cutting die bonding film X is bonded and is processed by wafer With the semiconductor crystal wafer 30A kept with T2.Later, it as shown in (b) of Fig. 3, processes from semiconductor crystal wafer 30A by wafer with band T2 Removing.In the case where the adhesive phase 22 in die bonding film X is cut as radiation curing adhesive phase, it can replace and cut The above-mentioned irradiation with radiation in the manufacturing process of die bonding film X is cut, in semiconductor crystal wafer 30A to die bonding film 10 Ultraviolet light israds is irradiated to adhesive phase 22 from 21 side of substrate after fitting.Exposure is, for example, 50~500mJ/cm2, it is excellent It is selected as 100~300mJ/cm2.It to carry out reducing measure as the bonding force of adhesive phase 22 in cutting die bonding film X The region (irradiation area R shown in FIG. 1) of irradiation is in 10 fit area of die bonding film in such as adhesive phase 22 The region in addition to its peripheral part.
Then, after pasting ring frame 41 on the die bonding film 10 in cutting die bonding film X, such as Fig. 4 (a) shown in, the cutting die bonding film X with semiconductor crystal wafer 30A is fixed on to the holding tool 42 of expanding unit.
Then, the 1st extension process under conditions of the progress relative low temperature as shown in (b) of Fig. 4 (cooling extension process), will Semiconductor crystal wafer 30A monolithic turns to multiple semiconductor chips 31, and the die bonding film 10 that will cut die bonding film X Partition is the die bonding film 11 of small pieces, obtains the semiconductor chip 31 with die bonding film.In this process, make to extend The jack-up component 43 for the hollow cylindrical that device has downside in the figure of cutting die bonding film X is connected to cutting belt 20 and rise, according to along the two-dimensional directional radially and circumferentially including semiconductor crystal wafer 30A to being fitted with semiconductor crystal wafer 30A The mode that is stretched of cutting belt 20 of cutting die bonding film X be extended.The extension in cutting belt 20 so as to generate Such as the condition of the tensile stress of 15~32Mpa carries out.Temperature condition in cooling extension process is, for example, 0 DEG C or less, excellent It is selected as -20~-5 DEG C, more preferably -15~-5 DEG C, more preferably -15 DEG C.Expansion rate in cooling extension process (jacks up structure The speed that part 43 rises) it is, for example, 0.1~100mm/ seconds.In addition, the propagation in cooling extension process is, for example, 3~16mm.
In this process, relatively thin and crackly position is cut off in semiconductor crystal wafer 30A, is generated to semiconductor core The singualtion of piece 31.At the same time, in this process, closely sealed chip is connect with the adhesive phase 22 for the cutting belt 20 to be extended Close and deform and be suppressed in the closely sealed each region of each semiconductor chip 31 in film 10, another aspect, with semiconductor chip At the opposite position of slot segmentation between 31, such deformation inhibiting effect is not generated and is produced in cutting belt 20 in such a state Raw tensile stress plays a role.As a result, the slot segmentation in die bonding film 10 between semiconductor chip 31 is opposite It is cut off position.After this process, as shown in (c) of Fig. 4, make to jack up the extension shape that component 43 declines and releases cutting belt 20 State.
Then, the 2nd extension process under conditions of the progress relatively-high temperature as shown in (a) of Fig. 5 makes to engage with chip thin Distance (separating distance) between the semiconductor chip 31 of film is widened.In this process, the hollow cylindrical that has expanding unit The jack-up component 43 of shape rises again and extends the cutting belt 20 of cutting die bonding film X.Temperature strip in 2nd extension process Part is, for example, 10 DEG C or more, preferably 15~30 DEG C.Expansion rate (jacking up the speed that component 43 rises) in 2nd extension process For example, 0.1~10mm/ seconds.In addition, the propagation in the 2nd extension process is, for example, 3~16mm.Make in this process with chip The separating distance of the semiconductor chip 31 of bonding film is widened to can be by aftermentioned pickup process suitably from cutting belt 20 Pick up the degree of the semiconductor chip 31 with die bonding film.After this process, as shown in (b) of Fig. 5, make to jack up component 43 declines, release the extended mode of cutting belt 20.It is thin with chip engagement in cutting belt 20 after inhibiting extended mode to release The aspect that the separating distance of the semiconductor chip 31 of film narrows, preferably before releasing extended mode in cutting belt 20 with half 31 holding area of conductor chip is heated compared to part in the outer part, makes its contraction.
Then, as needed through cleaning solutions such as utilization water to the semiconductor chip 31 with die bonding film After the cleaning process that 31 side of semiconductor chip in cutting belt 20 is cleaned, as shown in fig. 6, being had from the pickup of cutting belt 20 The semiconductor chip 31 (pickup process) of die bonding film.For example, for having die bonding film as pickup object Semiconductor chip 31, in the figure of cutting belt 20 downside make mechanism for picking pin component 44 rise and across cutting belt 20 jack up Later, absorption holding is carried out using suction jig 45.In pickup process, the jack-up speed of pin component 44 is, for example, 1~100mm/ Second, the jack-up amount of pin component 44 is, for example, 50~3000 μm.
Then, it as shown in (b) of (a) of Fig. 7 and Fig. 7, carries out the semiconductor chip 31 with die bonding film and is pacifying Fill the temporary fixation on substrate 51.The temporary fixation is embedded in semiconductor core with the semiconductor chip 31 ' etc. on installation base plate 51 The mode for the die bonding film 11 that piece 31 has carries out.As installation base plate 51, for example, lead frame, TAB (belt Automatic engagement；Tape Automated Bonding) film and circuit board.Semiconductor chip 31 ' is solid by adhesive layer 52 It is scheduled on installation base plate 51.The portion of terminal that the electrode pad (illustration omitted) and installation base plate 51 of semiconductor chip 31 ' have (saves Sketch map shows) it is electrically connected by closing line 53.As closing line 53, gold thread, aluminum steel or copper wire can be used for example.This work In sequence, so carried out wire bonding installation semiconductor chip 31 ' with and its closing line 53 connecting entirety be embedded in partly In the die bonding film 11 that conductor chip 31 has.In addition, in this process, in order to form semiconductor chip 31 ' and closing line 53 are easy the state squeezed into die bonding film 11, and die bonding film 11 can be heated makes its softening.Heating temperature is The temperature of the not up to complete heat cure state of die bonding film 11, for example, 80~140 DEG C.
Then, such as (c) of Fig. 7, die bonding film 11 is made to solidify (heat curing processes) by heating.In this process, add Hot temperature is, for example, 100~200 DEG C, and heating time is, for example, 0.5~10 hour.By passing through this process, chip engagement is formed Adhesive layer made of 11 heat cure of film.Wire bonding is installed on the semiconductor chip of installation base plate 51 by the adhesive layer The entirety of 31 ' (the 1st semiconductor chips) and closing line connected to it 53 embeds together, and by semiconductor chip 31 and installs Substrate 51 engages.
Then, as shown in (a) of Fig. 8, the electrode pad (illustration omitted) and installation base plate 51 of semiconductor chip 31 have Portion of terminal (illustration omitted) be electrically connected (lead-in wire bonding process) by closing line 53.The electrode pad of semiconductor chip 31 The portion of terminal of wiring and installation base plate 51 and the wiring of closing line 53 with closing line 53 pass through the ultrasonic bonding with heating To realize.Lead heating temperature in wire bonding is, for example, 80~250 DEG C, and heating time is, for example, several seconds~several minutes. Such lead-in wire bonding process can carry out before above-mentioned heat curing processes.
Then, it as shown in (b) of Fig. 8, is formed for by the sealing of the equal sealings of semiconductor chip 31 on installation base plate 51 Resin 54 (sealing process).In this process, such as sealing resin 54 formed by using the transfer molding technology that mold carries out. As the constituent material of sealing resin 54, such as epoxy system resin can be enumerated.In this process, it is used to form sealing resin 54 Heating temperature be, for example, 165~185 DEG C, heating time is, for example, 60 seconds~several minutes.When sealing resin 54 in this process Solidification not sufficiently carry out when, carried out after this process for by further heat treatment keep sealing resin 54 completely solid The rear curing process changed.Afterwards in curing process, heating temperature is, for example, 165~185 DEG C, and heating time is, for example, 0.5~8 small When.Even if, can also be in the above-mentioned operation referring to (c) of Fig. 7 in the case where 11 not complete heat cure of die bonding film Realize the complete heat cure of die bonding film 11 in sealing process, rear curing process together with sealing resin 54.
Operation as described above can manufacture the multistage semiconductor device for being equipped with multiple semiconductor chips.This embodiment party In formula, the entirety of semiconductor chip 31 ' and closing line 52 connected to it, which is embedded in made of die bonding film 11 solidifies, glues It connects in oxidant layer.In contrast, being also possible to the semiconductor chip 31 ' in semiconductor chip 31 ' and closing line 52 connected to it A part of side is embedded in adhesive layer made of die bonding film 11 solidifies.In addition, can replace in present embodiment The semiconductor chip 31 ' of wire bonding installation, such as shown in figure 9, the semiconductor chip 31 ' installed using flip-chip.Fig. 9 Shown in semiconductor chip 31 ' be electrically connected by convex block 55 with installation base plate 51, in the semiconductor chip 31 ' and installation base plate 51 Between filled with underfill 56 and heat cure.In semiconductor device shown in Fig. 9,11 heat cure of die bonding film is formed Adhesive layer the semiconductor chip 31 ' (the 1st semiconductor chip) that flip-chip is installed on installation base plate 51 is embedded and will half Conductor chip 31 (the 2nd semiconductor chip) is engaged with installation base plate 51.
Figure 10 and Figure 11 indicates a part of process in the other embodiments of manufacturing method for semiconductor device of the invention. In present embodiment, firstly, carrying out the semiconductor chip with die bonding film as shown in (a) of Figure 10 and (b) of Figure 10 31 are installed on the temporary fixation on the semiconductor chip 31 ' of installation base plate 51 to wire bonding.Semiconductor chip 31 ' is by bonding Oxidant layer 52 is fixed in installation base plate 51.What the electrode pad (illustration omitted) and installation base plate 51 of semiconductor chip 31 ' had Portion of terminal (illustration omitted) is electrically connected by closing line 53.In this process, die bonding film 11 covers such progress 53 connecting portion of closing line of the semiconductor chip 31 ' of wire bonding installation, a part of closing line 53 are embedded in the chip and connect It closes in film 11.It, can be with for the state for making closing line 53 be easy to squeeze into die bonding film 11 in addition, in this process Carrying out heating to die bonding film 11 makes its softening.Heating temperature is that die bonding film 11 is not up to complete heat cure state Temperature, for example, 80~140 DEG C.
Then, as shown in (c) of Figure 10, die bonding film 11 is solidified by (heat curing processes) by heating.This process In, heating temperature is, for example, 100~200 DEG C, and heating time is, for example, 0.5~10 hour.By passing through this process, chip is formed Adhesive layer made of 11 heat cure of bonding film.Adhesive layer covering wire bonding is installed on the semiconductor of installation base plate 51 53 connecting portion of closing line of chip 31 ' and a part for embedding closing line 53, and by (the 2nd semiconductor of semiconductor chip 31 Chip) it is engaged with semiconductor chip 31 ' (the 1st semiconductor chip).
Then, as shown in (a) of Figure 11, electrode pad (illustration omitted) and the installation base plate 51 of semiconductor chip 31 have Portion of terminal (illustration omitted) by closing line 53 be electrically connected (lead-in wire bonding process).The electrode pad of semiconductor chip 31 with connect The wiring of zygonema 53 and the portion of terminal of installation base plate 51 and the wiring of closing line 53 reality and the ultrasonic bonding with heating It is existing.Lead heating temperature in wire bonding is, for example, 80~250 DEG C, and heating time is, for example, several seconds~several minutes.It is this Lead-in wire bonding process can carry out before above-mentioned heat curing processes in the present embodiment.
Then, it as shown in (b) of Figure 11, is formed for by the semiconductor chip 31,31 ' and closing line on installation base plate 51 The sealing resin 54 (sealing process) of 53 sealings.In this process, the heating temperature for being used to form sealing resin 54 is, for example, 165~ 185 DEG C, heating time is, for example, 60 seconds~several minutes.In this process, in the case that the solidification of sealing resin 54 does not carry out sufficiently, It is carried out after this process by further heating the rear curing process that sealing resin 54 is fully cured.After solidify work In sequence, heating temperature is, for example, 165~185 DEG C, and heating time is, for example, 0.5~8 hour.Even if 0 (c's) referring to Fig.1 is upper In the case where stating the incomplete heat cure of die bonding film 11 in process, also can in sealing process, rear curing process with it is close Envelope resin 54 realizes the complete heat cure of die bonding film 11 together.
Operation as described above can manufacture the multistage semiconductor device for being equipped with multiple semiconductor chips.
In manufacturing method for semiconductor device of the invention, the above-mentioned wafer thinning process of (d) referring to Fig. 2 can replace, Carry out wafer thinning process shown in Figure 12.After the above process referring to (c) of Fig. 2, the wafer shown in Figure 12 is thinned It, will by the grinding from the 2nd face Wb in the state that wafer processing is with semiconductor crystal wafer W is maintained on band T2 in process The wafer is thinned to specific thickness, is formed comprising multiple semiconductor chips 31 and is held in semiconductor of the wafer processing with T2 Wafer dividing body 30B.In this process, can using by wafer be ground to slot segmentation 30a its own the 2nd face side Wb expose until Method (the 1st method), can also be with the following method: wafer is ground from the 2nd face side Wb to slot segmentation 30a will be reached, Then the extruding force effect of wafer is made to crack between slot segmentation 30a and the 2nd face Wb using grindstone, to form half The method (the 2nd method) of semiconductor wafer dividing body 30B.It is suitable for (a) and Fig. 2 determined referring to Fig. 2 according to used method (b) slot segmentation 30a as formed above, depth from the 1st face Wa.In Figure 12, schematically shown with thick line via the 1st side Slot segmentation 30a made of method or via slot segmentation 30a made of the 2nd method and coupled crackle.It can replace and partly lead Body wafer 30A and by the semiconductor crystal wafer dividing body 30B so made fit in cutting die bonding film X, then joined According to the above-mentioned each process of Fig. 3~Fig. 6.
(a) of Figure 13 and (b) of Figure 13 specifically illustrate by semiconductor crystal wafer dividing body 30B fit in cutting chip engagement it is thin The 1st extension process (cooling extension process) carried out after film X.In this process, the hollow cylindrical that has expanding unit Jack-up component 43 be connected to cutting belt 20 in the figure of cutting die bonding film X and rise in downside, with along including partly leading The two-dimensional directional radially and circumferentially of body wafer dividing body 30B connects the cutting chip for being fitted with semiconductor crystal wafer dividing body 30B The mode that the cutting belt 20 of conjunction film X is stretched is extended.The extension in cutting belt 20 to generate such as 1~100Mpa The condition of tensile stress carry out.Temperature condition in this process is, for example, 0 DEG C or less, is preferably -20~-5 DEG C, more preferable It is -15~-5 DEG C, more preferably -15 DEG C.Expansion rate (jack up component 43 rise speed) in this process is, for example, 1~ 500mm/ seconds.In addition, the propagation in this process is, for example, 50~200mm.Cooling extension process in this way, cuts chip The die bonding film 10 of bonding film X is cut off die bonding film 11 for small pieces, to obtain engaging with chip thin The semiconductor chip 31 of film.Specifically, in this process, the closely sealed core with the adhesive phase 22 for the cutting belt 20 to be extended Chip bonding film 10 is deformed in the closely sealed each region of each semiconductor chip 31 of semiconductor crystal wafer dividing body 30B and is suppressed, On the other hand, this deformation inhibiting effect is not generated at the opposite position the slot segmentation 30a between semiconductor chip 31, at this The tensile stress generated in cutting belt 20 under state plays a role.As a result, in die bonding film 10 with semiconductor chip 31 Between the opposite position slot segmentation 30a cut off.The obtained semiconductor chip 31 with die bonding film is by ginseng According to after the above-mentioned pickup process of Fig. 6 by the installation procedure for semiconductor device fabrication.
In manufacturing method for semiconductor device of the invention, semiconductor crystal wafer 30A or semiconductor crystal wafer segmentation also can replace Body 30B is fitted in the above-mentioned composition of cutting die bonding film X, and is fitted in the semiconductor crystal wafer 30C for operating production as follows Cut die bonding film X.
In the production of semiconductor crystal wafer 30C, firstly, as shown in (a) of Figure 14 and (b) of Figure 14, it is W-shaped in semiconductor crystal wafer At modification area 30b.Semiconductor crystal wafer W has the 1st face Wa and the 2nd face Wb.Pacify the 1st face side Wa in semiconductor crystal wafer W Various semiconductor elements (illustration omitted) is filled, and wiring needed for having formd the semiconductor element on the 1st face Wa Structure etc. (illustration omitted).In this process, it is fitted in semiconductor crystal wafer W's with T3 for processing with the wafer of adhesive surface T3a After the 1st face side Wa, with the state for maintaining semiconductor crystal wafer W on T3, to be processed from wafer with band T3 in wafer processing Opposite side is directed at the laser of inside wafer to semiconductor crystal wafer W along its pre-segmentation line irradiation focal point, using by multi-photon Ablation caused by absorbing forms modification area 30b in semiconductor crystal wafer W.Modification area 30b is for making semiconductor crystal wafer W points From the crisp atenuator region for semiconductor core blade unit.It is formed on pre-segmentation line in semiconductor crystal wafer about by laser irradiation The method of modification area 30b, such as be documented in Japanese Unexamined Patent Publication 2002-192370 bulletin, in present embodiment Laser irradiation condition is for example suitable for adjustment in the range of the following conditions.
<laser irradiation condition>
(A) laser
(B) optically focused lens
100 times of multiplying power or less
NA 0.55
To 100% or less the transmissivity of optical maser wavelength
(C) it is placed with movement speed 280mm/ seconds or less of the mounting table of semiconductor substrate
Then, in the state that wafer is processed and maintains semiconductor crystal wafer W with band T3, by adding from the grinding of the 2nd face Wb Semiconductor crystal wafer W is thinned to defined thickness by work, as a result, as shown in (c) of Figure 14, is formed energy monolithic and is turned to multiple semiconductors The semiconductor crystal wafer 30C (wafer thinning process) of chip 31.It can replace semiconductor crystal wafer 30A and operate the half of production for as above Semiconductor wafer 30C is fitted in cutting die bonding film X, and carries out the above-mentioned each process referring to Fig. 3~Fig. 6.
(a) of Figure 15 and (b) of Figure 15 specifically illustrate by semiconductor crystal wafer 30C be bonded cutting die bonding film X it The 1st extension process (cooling extension process) carried out afterwards.In this process, the top for the hollow cylindrical for having expanding unit It plays the downside in the figure of cutting die bonding film X of component 43 to be connected to cutting belt 20 and rise, with along including semiconductor die Cutting belt 20 of the two-dimensional directional radially and circumferentially of circle 30C to the cutting die bonding film X for being fitted with semiconductor crystal wafer 30C The mode stretched is extended.The extension is so as to generate the condition of the tensile stress of such as 1~100Mpa in cutting belt 20 Come carry out.Temperature condition in this process is, for example, 0 DEG C or less, preferably -20~-5 DEG C, is more preferably -15~-5 DEG C, is more excellent It is selected as -15 DEG C.Expansion rate (jacking up the speed that component 43 rises) in this process is, for example, 1~500mm/ seconds.In addition, this work Propagation in sequence is, for example, 50~200mm.Cooling extension process in this way, the chip of cutting die bonding film X connect It closes film 10 and is cut off die bonding film 11 for small pieces, to obtain the semiconductor chip 31 with die bonding film. Specifically, forming crackle in this process at fragile modification area 30b in semiconductor crystal wafer 30C, occurring to semiconductor core The singualtion of piece 31.At the same time, in this process, closely sealed chip is connect with the adhesive phase 22 for the cutting belt 20 to be extended It closes in film 10 in the closely sealed each region of each semiconductor chip 31 of semiconductor crystal wafer 30C, deformation is suppressed, another party Face does not generate this deformation inhibiting effect, in this state cutting belt at the position opposite with the crackle forming position of wafer The tensile stress generated in 20 plays a role.As a result, the crackle in die bonding film 10 between semiconductor chip 31 is formed It is cut off the opposite position in position.The obtained semiconductor chip 31 with die bonding film is by referring to the upper of Fig. 6 Pickup process is stated later by for the installation procedure in semiconductor device fabrication.
The inventors of the present invention's discovery: for the cutting core that can be used in for example above such semiconductor device fabrication Die bonding film 10 in chip bonding film X, for width 10mm die bonding film test film in initial chuck spacing The yield strength in tension test carried out under conditions of 10mm, 23 DEG C and tensile speed 300mm/ minutes is 15N or less, is broken Even if the above-mentioned composition that intensity is 15N or less and elongation at break is 40~400% compares thick in the die bonding film 10 In the case where be also suitable for making the die bonding film 10 in extension process to cut off predetermined position at it cutting off and press down It makes from dispersing in cutting belt 20.For example, shown in Examples and Comparative Examples as be described hereinafter.
For the elongation at break in the above-mentioned tension test of die bonding film 10 be 40~400%, preferably 40~ 350%, it is more preferably 40~300% above-mentioned composition, it is believed that connect in avoiding the extension process cut off for cutting off chip The tensile elongation for closing film 10 becomes excessive and the die bonding film 10 is made to be easy to produce ductile rupture rather than brittle fracture Aspect is preferred.It is easy to produce the die bonding film of ductile rupture, is cut off in extension process cutting off and is used stress Easier conduction is to the predetermined position of cutting off of the film, therefore, is easy to be cut off cutting off predetermined position.
For the yield strength in the above-mentioned tension test of die bonding film 10 be 15N or less, preferably 12N or less, More preferably 10N is hereinafter, and the breaking strength in same tension test is 15N or less, preferably 12N or less, more preferably 10N Above-mentioned composition below, it is believed that inhibiting to cut off the elongation process and fracture process with the die bonding film 10 in extension process In be preferred in terms of the strain energy accumulated inside the film.It cuts off and uses in extension process, elongation process and fracture The small die bonding film of inside accumulation strain energy in the process, is more not likely to produce and (is not covered by workpiece in its exposed area Region) fracture and diaphragm the phenomenon that dispersing.
As described above, die bonding film 10 in the form of 22 side of adhesive phase for being sealed at cutting belt 20 to be used to cut off When with extension process, it is adapted for carrying out and good cut off and inhibit to disperse.In addition, cutting die bonding film X is for cutting off with expansion When opening up process, good cut off suitable for realizing die bonding film 10 and inhibit to disperse.
The thickness of die bonding film 10 is preferably 40 μm or more, more preferably 60 μm or more, is more preferably as described above 80 μm or more.This be formed in uses die bonding film 10 as the adhering film of semiconductor chip embedding, is connect It is suitable in terms of the adhering film that the semiconductor chip of zygonema being partially embedded shares indirectly.In addition, die bonding film 10 thickness is preferably 200 μm or less, more preferably 160 μm or less, more preferably 120 μm or less.This be formed in avoids core The yield strength of chip bonding film 10, breaking strength, elongation at break become excessive and realize the surrender in above-mentioned tension test It is preferred in terms of the above-mentioned composition that intensity is 15N or less, breaking strength is 15N or less and elongation at break is 40~400% 's.
Viscosity when 120 DEG C under the uncured state of die bonding film 10 be as described above preferably 300Pas with Upper, more preferably 700Pas or more, more preferably 1000Pas or more.Under the uncured state of die bonding film 10 Viscosity at 120 DEG C is preferably 5000Pas or less, more preferably 4500Pas or less, more preferably 4000Pas or less. These about the viscosity and/or pliability under the uncured state of die bonding film 10 are formed in using die bonding film 10 as semiconductor chip embedding adhering film, carried out what the semiconductor chip being partially embedded of closing line shared indirectly It is suitable in terms of adhering film.
Inorganic filler content when die bonding film 10 is containing inorganic filler be as described above preferably 10 mass % with Upper, more preferably 20 mass % or more, more preferably 30 mass % or more.In addition, the content is preferably 50 mass % or less, more Preferably 45 mass % or less, more preferably 40 mass % or less.There is the inorganic filler content in adhesive layer formation film More increase, the elongation at break of the film becomes smaller tendency, and have the tendency that yield strength becomes bigger, but and core Related this composition of inorganic filler content in chip bonding film 10 for inhibit die bonding film 10 exposed area (not The region covered by workpiece) in fracture occurs and above-mentioned phenomenon that diaphragm disperses is suitable.
Die bonding film 10 preferably comprises organic filler, and the content of the organic filler in die bonding film 10 is preferably 2 mass % or more, more preferably 5 mass % or more, more preferably 8 mass % or more.In addition, die bonding film 10 has Content when machine filler is preferably 20 mass % or less, more preferably 17 mass % or less, more preferably 15 mass % or less. This composition related with the organic filler content in die bonding film 10 is by the yield strength of die bonding film 10 and disconnected Resistance to spalling control is suitable in terms of proper range.
Die bonding film 10 preferably comprises the acrylic resin that glass transition temperature is -40~10 DEG C.This structure It is suitable in terms of making die bonding film 10 realize the above-mentioned composition below of the yield strength 15N in above-mentioned tension test Suitable.
[embodiment]
(embodiment 1)
The production > of < die bonding film (DAF)
By acrylic resin A1(trade name " Teisan Resin SG-708-6 ", weight average molecular weight are 700,000, glass Changing transition temperature Tg is 4 DEG C, Nagase ChemteX Corporation system) 18 mass parts, epoxy resin (trade name " KI- 3000-4 ", Nippon Steel & Sumitomo Metal Corporation's system) 28 mass parts, phenolic resin (trade name " LVR8210-DL ", group's honor Learn Industrial Co., Ltd's system) 14 mass parts, inorganic filler (trade name " SE-2050MC ", silica, average grain diameter be 0.5 μ M, Admatechs Company system) 40 mass parts and as curing catalysts organic catalyst (trade name " TPP-MK ", north Learn Co. Ltd. system in Xinghua) 0.1 mass parts are added in methyl ethyl ketone and are mixed, obtain adhesive composite.Then, using painting Dauber applies in the silicone release process face of the PET slider (38 μm of thickness) with the face for implementing silicone release processing Cloth adhesive composite forms adhesive composite layer.Then, the heating carried out 2 minutes at 130 DEG C to the composition layer is done It is dry, the die bonding film of 100 μm of thickness of embodiment 1 has been made on PET slider.By embodiment 1 and aftermentioned each The composition of embodiment and the die bonding film in each comparative example, which is recorded in table 1, (in table 1, indicates the composition of die bonding film Each numerical value unit be the composition in opposite " mass parts ").
The production > of < cutting belt
It will include acrylic acid 2- second in the reaction vessel for having condenser pipe, nitrogen ingress pipe, thermometer and agitating device Own 86.4 mass parts of ester of base, 13.6 mass parts of acrylic acid 2- hydroxy methacrylate, 0.2 matter of benzoyl peroxide as polymerization initiator The mixture of amount part and 65 mass parts of toluene as polymer solvent stirs 6 hours under 61 DEG C, nitrogen atmosphere, and (polymerization is anti- It answers).It is obtained as a result, containing acrylic polymer P1Polymer solution.Then, acrylic polymer will be contained comprising this P1Polymer solution, 2- methacryloxyethyl isocyanates (MOI) and two laurels as addition reaction catalyst The mixture of sour dibutyl tin stirs 48 hours (addition reaction) under 50 DEG C, air atmosphere.In the reaction solution, MOI's matches Mixed amount is relative to above-mentioned acrylic polymer P1100 mass parts are 14.6 mass parts, the compounding amount of dibutyl tin dilaurate Relative to acrylic polymer P1100 mass parts are 0.5 mass parts.By the addition reaction, obtain containing having in side chain The acrylic polymer P of methacrylate2Polymer solution.Then, in the polymer solution, be added relative to Acrylic polymer P2100 mass parts are polyisocyanate compound (trade name " CORONATE L ", the TOSOH of 2 mass parts CORPORATION system), the Photoepolymerizationinitiater initiaters (trade name " IRGACURE 651 ", BASF AG's system) of 5 mass parts and mix, Obtain adhesive composition.Then, have the PET slider in the face for implementing silicone release processing (thick using applicator Degree 38 μm) silicone release process face on coating adhesive composition, formed adhesive composition layer.Then, at 120 DEG C The heat drying that 2 minutes are carried out to the composition layer forms 10 μm of thickness of adhesive phase on PET slider.Then, it uses Laminating machine, at room temperature to the substrate (quotient of exposed surface fitting vinyl-vinyl acetate copolymer (EVA) system of the adhesive phase The name of an article " FUNCRARE NRB#115 ", 115 μm of thickness, GUNZE LIMITED system).Production cutting belt as described above.
The production > of < cutting die bonding film
By the said chip bonding film Punching Technology of the embodiment 1 with PET slider at the circle of diameter 330mm. Then, from die bonding film removing PET slider and after above-mentioned cutting belt removing PET slider, layer of rolls press is used The face paste exposed in the adhesive phase and die bonding film that expose in the cutting belt due to the removing of PET slider is closed. In the fitting, will fitting speed be set as 10mm/ minutes, temperature condition be set as 40 DEG C, pressure condition be set as 0.15MPa.Then, with The consistent mode in the center of cutting belt and the center of die bonding film will as above operate the cutting being bonded with die bonding film With Punching Technology at the circle of diameter 390mm.Then, ultraviolet light is irradiated from EVA substrate side to the adhesive phase of cutting belt.It is ultraviolet In line irradiation, using high-pressure sodium lamp, irradiation accumulated light is set as 400mJ/cm2.Operate like that above, made have comprising The cutting die bonding film of the embodiment 1 of cutting belt and the stepped construction of die bonding film.
(embodiment 2)
Use acrylic resin A2(trade name " Teisan Resin SG-70L ", weight average molecular weight are 900,000, glass Change transition temperature Tg be -13 DEG C, Nagase ChemteX Corporation system) 18 mass parts replace acrylic resin A118 In addition to this mass parts are operated in the same way with the die bonding film of embodiment 1, made the die bonding film of embodiment 2 (100 μm of thickness).In addition, replacing the said chip bonding film of embodiment 1 using the die bonding film of the embodiment 2, remove It except this, is operated in the same way with the cutting die bonding film of embodiment 1, has made the cutting die bonding film of embodiment 2.
(embodiment 3)
Use acrylic resin A3(trade name " Teisan Resin SG-280 ", weight average molecular weight are 900,000, glass Change transition temperature Tg be -29 DEG C, Nagase ChemteX Corporation system) 18 mass parts replace acrylic resin A118 In addition to this mass parts are operated in the same way with the die bonding film of embodiment 1, made the die bonding film of embodiment 3 (100 μm of thickness).In addition, replacing the said chip bonding film of embodiment 1 using the die bonding film of the embodiment 3, remove It except this, is operated in the same way with the cutting die bonding film of embodiment 1, has made the cutting die bonding film of embodiment 3.
(embodiment 4)
Use acrylic resin A2(trade name " Teisan Resin SG-70L ", Nagase ChemteX Corporation system) 18 mass parts replace acrylic resin A118 mass parts, by epoxy resin (trade name " KI-3000- 4 ", Nippon Steel & Sumitomo Metal Corporation's system) compounding amount be set as 22 mass parts to replace 28 mass parts, by phenolic resin (quotient The name of an article " LVR8210-DL ", Gunsaka Chem. Industry Co., Ltd.'s system) compounding amount be set as 10 mass parts to replace 14 mass parts, with And the compounding amount of inorganic filler (trade name " SE-2050MC ", Admatechs Company system) is set as 50 mass parts to replace In addition to this 40 mass parts are operated in the same way with the die bonding film of embodiment 1, the chip engagement for having made embodiment 4 is thin Film (100 μm of thickness).In addition, the said chip bonding film of embodiment 1 is replaced using the die bonding film of the embodiment 4, In addition to this, it is operated in the same way with the cutting die bonding film of embodiment 1, the cutting chip engagement for having made embodiment 4 is thin Film.
(embodiment 5)
The compounding amount of inorganic filler (trade name " SE-2050MC ", Admatechs Company system) is set as 30 mass parts 40 mass parts are replaced, and are further compounded organic filler (trade name " Art Pearl J-4PY ", poly-methyl methacrylate Ester (PMMA), Negami Chemical Ind Co., Ltd.'s system) in addition to this 10 mass parts grasp in the same manner as the die bonding film of embodiment 1 Make, has made the die bonding film (100 μm of thickness) of embodiment 5.In addition, using the die bonding film generation of the embodiment 5 It for the said chip bonding film of embodiment 1, in addition to this, operates in the same way, makes with the cutting die bonding film of embodiment 1 The cutting die bonding film of embodiment 5 is made.
(embodiment 6)
Use acrylic resin A3(trade name " Teisan Resin SG-280 ", Nagase ChemteX Corporation system) 18 mass parts replace acrylic resin A118 mass parts, by inorganic filler (trade name " SE- 2050MC ", Admatechs Company system) compounding amount be set as 30 mass parts to replace 40 mass parts, and further compounding Organic filler (trade name " Art Pearl J-4PY ", polymethyl methacrylate (PMMA), Negami Chemical Ind Co., Ltd.'s system) 10 In addition to this mass parts are operated in the same way with the die bonding film of embodiment 1, made the die bonding film of embodiment 6 (100 μm of thickness).In addition, replacing the said chip bonding film of embodiment 1 using the die bonding film of the embodiment 6, remove It except this, is operated in the same way with the cutting die bonding film of embodiment 1, has made the cutting die bonding film of embodiment 6.
(embodiment 7)
Use acrylic resin A3(trade name " Teisan Resin SG-280 ", Nagase ChemteX Corporation system) 18 mass parts replace acrylic resin A118 mass parts, by inorganic filler (trade name " SE- 2050MC ", Admatechs Company system) compounding amount be set as 30 mass parts to replace 40 mass parts, be further compounded organic Filler (trade name " Art Pearl J-4PY ", polymethyl methacrylate (PMMA), Negami Chemical Ind Co., Ltd.'s system) 10 mass Part, and thickness is set as 200 μm to replace 100 μm, in addition to this, operated in the same way with the die bonding film of embodiment 1, The die bonding film of embodiment 7 is made.In addition, the die bonding film using the embodiment 7 replaces the above-mentioned of embodiment 1 In addition to this die bonding film operates in the same way with the cutting die bonding film of embodiment 1, has made cutting for embodiment 7 Cut die bonding film.
(comparative example 1)
The compounding amount of epoxy resin (trade name " KI-3000-4 ", Nippon Steel & Sumitomo Metal Corporation's system) is set as 22 Mass parts replace 28 mass parts, by phenolic resin (trade name " LVR8210-DL ", Gunsaka Chem. Industry Co., Ltd.'s system) Compounding amount is set as 10 mass parts to replace 14 mass parts, and by inorganic filler (trade name " SE-2050MC ", Admatechs Company system) compounding amount be set as 50 mass parts to replace 40 mass parts, in addition to this, the die bonding film with embodiment 1 It operates in the same way, has made the die bonding film (100 μm of thickness) of comparative example 1.In addition, being connect using the chip of the comparative example 1 The said chip bonding film that film replaces embodiment 1 is closed, it is in addition to this, same as the cutting die bonding film of embodiment 1 Ground operation, has made the cutting die bonding film of comparative example 1.
(comparative example 2)
Use acrylic resin A2(trade name " Teisan Resin SG-70L ", Nagase ChemteX Corporation system) 24 mass parts replace acrylic resin A118 mass parts, by epoxy resin (trade name " KI-3000- 4 ", Nippon Steel & Sumitomo Metal Corporation's system) compounding amount be set as 24 mass parts to replace 28 mass parts, and by phenolic resin The compounding amount of (trade name " LVR8210-DL ", Gunsaka Chem. Industry Co., Ltd.'s system) is set as 12 mass parts to replace 14 mass Part, it in addition to this, is operated in the same way with the die bonding film of embodiment 1, the die bonding film for having made comparative example 2 is (thick 100 μm of degree).In addition, replace the said chip bonding film of embodiment 1 using the die bonding film of the comparative example 2, except this it Outside, it is operated in the same way with the cutting die bonding film of embodiment 1, has made the cutting die bonding film of comparative example 2.
(comparative example 3)
Thickness is set as 200 μm to replace 100 μm, in addition to this, is grasped in the same manner as the die bonding film of embodiment 1 Make, has made the die bonding film of comparative example 3.In addition, the die bonding film using the comparative example 3 replaces embodiment 1 In addition to this said chip bonding film operates in the same way with the cutting die bonding film of embodiment 1, has made comparative example 3 Cutting die bonding film.
The tension test > of < die bonding film
For each die bonding film examination cut out from the said chip bonding film of Examples 1 to 7 and comparative example 1~3 Piece (width 10mm × length 30mm) is tested, cupping machine (trade name " Autograph AGS-J ", Shimano Inc are used Make made) carry out tension test, measurement yield strength, breaking strength and elongation at break.In the tension test, initial chuck Spacing is 10mm, and temperature condition is 23 DEG C, and tensile speed is 300mm/ minutes.By the yield strength measured (N), breaking strength (N) and each value of elongation at break (%) is recorded in table 1.
The viscosimetric analysis > of < die bonding film
For Examples 1 to 7 and above-mentioned each die bonding film of comparative example 1~3,120 under uncured state are measured DEG C when viscosity.Specifically, the 0.1g sample acquired from die bonding film is put into the parallel-plate (diameter as assay plate 20mm), the melt viscosity of the sample is measured using rheometer (trade name " RS-1 ", HAAKE corporation), using parallel plate method (Pa·s).In this measurement, the gap between parallel-plate is 0.1mm, and rate of straining is 5/ second, and heating rate is 10 DEG C/min, is surveyed Determining temperature range is 90~150 DEG C.Measurement result is recorded in table 1.
The cutting off property of < die bonding film and the evaluation > to disperse
Using Examples 1 to 7 and above-mentioned each cutting die bonding film of comparative example 1~3, following such fitting is carried out (room temperature extends work for process, the 1st extension process (cooling extension process) for cutting off and the 2nd extension process for separation Sequence).
In bonding process, wafer processing band (trade name " UB-3083D ", Nitto Denko Corp's system) will be held in Semiconductor crystal wafer dividing body fit in cutting die bonding film die bonding film, then, from semiconductor crystal wafer divide Band is used in body removing wafer processing.In fitting, using laminating machine, will fitting speed be set as 10mm/ seconds, temperature condition be set as 50~80 DEG C, pressure condition be set as 0.15MPa.In addition, semiconductor crystal wafer dividing body is formed as and prepares.Firstly, for being in The state of wafer processing band (trade name " V12S-R2-P ", Nitto Denko Corp's system) is held in together with ring frame Bare silicon wafer (12 inches of diameter, 780 μm of thickness, Tokyo Chemical Co., Ltd system), using cutter device (trade name " DFD6361 ", DISCO Corporation system) it (is formed wide using its rotating blade from the slot segmentation that a surface side of bare silicon wafer forms singualtion The clathrate of 50 μm, one 25 μm of degree, depth subregion 6mm × 12mm).Then, wafer is processed with band (trade name " UB- 3083D ", Nitto Denko Corp's system) be fitted in slot segmentation forming face after, remove above-mentioned wafer processing band from wafer (trade name " V12S-R2-P ").Then, using backgrinding apparatus (trade name " DGP8760 ", DISCO Corporation System), the wafer is thinned to 20 μm of thickness by the grinding from the another side of wafer (face of not formed slot segmentation) side, is connect , mirror finishing is implemented to the grinding surface by using the dry tumbling that same device carries out.Operation as described above is formed Semiconductor crystal wafer dividing body (in the state for being held in wafer processing band).The semiconductor crystal wafer dividing body is partly led comprising multiple Body chip (6mm × 12mm).
Cooling extension process uses chip detachment apparatus (trade name " Die Separator DDS2300 ", DISCO Corporation system), expanding element is cooled down by it to carry out.Specifically, firstly, at room temperature, having semiconductor die 12 inches of diameter of SUS ring frame is attached on cutting belt adhesive phase in the above-mentioned cutting die bonding film of circle dividing body (DISCO Corporation system).Then, which is set in device, utilizes the cold of same device But expanding element is extended the cutting belt of the cutting die bonding film with semiconductor crystal wafer dividing body.The cooling is expanded It opens up in process, temperature is -15 DEG C, and expansion rate is 300mm/ seconds, propagation 10mm.
Room temperature extends process and uses chip detachment apparatus (trade name " Die Separator DDS2300 ", DISCO Corporation system), it is carried out by its room temperature expanding element.Specifically, the room temperature expanding element using same device extends It has passed through the cutting belt of the cutting die bonding film with semiconductor crystal wafer dividing body of above-mentioned cooling extension process.The room temperature It extends in process, temperature is 23 DEG C, and expansion rate is 1mm/ seconds, propagation 10mm.Then, for have passed through room temperature extension Cut peripheral part implementation heat shrink processing in die bonding film, than workpiece attached area in the outer part.
For the cutting off property of die bonding film, by the above such process for using cutting die bonding film to carry out Later, preset lines whole region will be cut off there is a situation where cutting off to be evaluated as good (zero), be otherwise evaluated as bad (×).About core Chip bonding film disperses, will be from cutting belt after above such process by using cutting die bonding film progress Upper removing and the case where confirming the die bonding film piece to disperse on a semiconductor wafer, is evaluated as bad (×), otherwise evaluate For good (zero).These evaluation results are recorded in table 1.
[evaluation]
Using Examples 1 to 7 die bonding film when, in order to obtain have die bonding film semiconductor chip And in the extension process for using cutting die bonding film to carry out, it can be realized and good cut off and inhibit to disperse.
[table 1]

Claims (12)

1. a kind of die bonding film, wherein for width 10mm die bonding film test film initial chuck spacing from The yield strength in tension test carried out under conditions of 10mm, 23 DEG C and tensile speed 300mm/ minutes is 15N hereinafter, fracture Intensity is 15N hereinafter, and elongation at break is 40~400%.
2. die bonding film according to claim 1, with 40~200 μm of thickness.
3. die bonding film according to claim 1, the viscosity at 120 DEG C is 300~5000Pas.
4. die bonding film according to claim 1, wherein contain inorganic filler with the ratio of 10~50 mass %.
5. die bonding film according to claim 1, wherein contain organic filler with the ratio of 2~20 mass %.
6. die bonding film according to claim 4, wherein contain organic filler with the ratio of 2~20 mass %.
7. die bonding film according to claim 1, wherein contain third that glass transition temperature is -40~10 DEG C Olefin(e) acid resinoid.
8. die bonding film according to any one of claim 1 to 7 is used to form adhesive layer, the bonding Oxidant layer is by the 1st semiconductor chip that wire bonding is installed on installation base plate and the closing line for being connected to the 1st semiconductor chip Whole or part embed together and engage the 2nd semiconductor chip with the installation base plate.
9. die bonding film according to any one of claim 1 to 7 is used to form adhesive layer, the bonding Wire bonding is installed on the closing line connecting portion covering of the 1st semiconductor chip on installation base plate and by the closing line by oxidant layer A part embedding and by the 2nd semiconductor chip and the 1st semiconductor core chip bonding.
10. die bonding film according to any one of claim 1 to 7 is used to form adhesive layer, the bonding Flip-chip is installed on the embedding of the 1st semiconductor chip on installation base plate and by the 2nd semiconductor chip and the installation by oxidant layer Substrate engagement.
11. a kind of cutting die bonding film, has: the cutting belt with the stepped construction comprising substrate and adhesive phase； With,
In a manner of it can remove in the cutting belt described adhesive layer is closely sealed, any one of claims 1 to 10 institute The die bonding film stated.
12. a kind of manufacturing method for semiconductor device comprising following process:
1st process, fitting can be single on the die bonding film in the cutting die bonding film that claim 11 is recorded Piece turns to the semiconductor crystal wafer of multiple semiconductor chips or the semiconductor crystal wafer dividing body comprising multiple semiconductor chips；With,
2nd process, by being extended to the cutting belt in the cutting die bonding film, so that the chip be connect It closes film and cuts off the semiconductor chip for obtaining having die bonding film.
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