CN111647364A

CN111647364A - Dicing die bonding film

Info

Publication number: CN111647364A
Application number: CN202010139705.7A
Authority: CN
Inventors: 木村雄大; 杉村敏正; 大西谦司; 宍户雄一郎; 福井章洋; 高本尚英
Original assignee: Nitto Denko Corp
Current assignee: Nitto Denko Corp
Priority date: 2019-03-04
Filing date: 2020-03-03
Publication date: 2020-09-11
Also published as: JP2020145212A; TW202039612A; KR20200106452A; JP7389556B2

Abstract

Provided is a dicing die-bonding film suitable for performing a spreading process for obtaining a semiconductor chip with an adhesive layer under low temperature conditions. The dicing die-bonding film X of the present invention has a laminated structure including a dicing tape (10) and a die-bonding film (20). The surface of the dicing tape (10) on the side of the pressure-sensitive adhesive layer (12) exhibits a peel adhesion of 0.3N/20mm or more in a peel test under conditions of-15 ℃ to the SUS plane, a peel angle of 180 DEG and a peel speed of 300 mm/min. The die-bonding film (20) is releasably bonded to the adhesive layer (12) of the dicing tape (10).

Description

Dicing die bonding film

Technical Field

The present invention relates to a dicing die-bonding film that can be used in a manufacturing process of a semiconductor device.

Background

In the manufacturing process of a semiconductor device, a dicing die-bonding film is sometimes used in order to obtain a semiconductor chip with an adhesive film having a die-bonding size equivalent to that of a semiconductor chip, that is, a semiconductor chip with an adhesive layer. The dicing die-bonding film includes, for example: a dicing tape comprising a substrate and an adhesive layer; and a die-bonding film releasably bonded to the adhesive layer side thereof. The die bond film has a disk shape exceeding the size of the semiconductor wafer as a workpiece, and a dicing tape having a disk shape exceeding the size of the die bond film is concentrically bonded to the pressure-sensitive adhesive layer side of the dicing tape, for example. A ring frame may be attached to an area around the die bond film that is not covered with the die bond film in the adhesive layer of the dicing tape. The ring frame is a member that is mechanically abutted when the ring frame is attached to the dicing tape and the workpiece is conveyed by a conveying mechanism such as a conveying arm provided in various apparatuses.

Such a dicing die-bonding film can be used, for example, as follows. First, a semiconductor wafer as a workpiece is bonded to a die bond film in a state where a ring frame is attached to an adhesive region around the die bond film of a dicing tape. Next, the dicing die-bonding film and/or the semiconductor wafer held in the state of the die-bonding film is subjected to blade dicing. In the dicing with the blade, the semiconductor wafer and the die bond film in close contact therewith are subjected to cutting processing by a dicing blade rotating at high speed, and are singulated into a plurality of semiconductor chips each having a small adhesive film.

On the other hand, as another method for obtaining a semiconductor chip with an adhesive layer by using a dicing die-bonding film, a method is known which includes a spreading step of spreading the dicing die-bonding film and cutting the die-bonding film.

In this method, first, a semiconductor wafer is bonded to a dicing die-bonding film in a state where a ring frame is attached to an adhesive region around the dicing die-bonding film of a dicing tape. The semiconductor wafer is subjected to a predetermined process so that the semiconductor wafer can be singulated into a plurality of semiconductor chips by, for example, being cut together with the die bond film.

Next, a spreading process is performed on the dicing die-bonding film and the semiconductor wafer held therein using a spreading device. In the expanding step, in order to cut the die bond film so that a plurality of adhesive film pieces each adhering to the semiconductor chip are generated from the die bond film on the dicing tape, the dicing tape for dicing the die bond film is stretched in two-dimensional directions including a radial direction and a circumferential direction of the semiconductor wafer by the expanding device. In this expanding step, the semiconductor wafer on the die bond film is also cut at a position corresponding to a cut position in the die bond film, and the semiconductor wafer is singulated on the dicing die bond film and/or the dicing tape. With this method, it is possible to avoid the breakage and defects of the workpiece which may be caused by grinding in the above-described blade cutting using the cutting blade. The thinner the semiconductor wafer to be cut, the more likely the crack or defect is generated.

For example, the related art for dicing die-bonding films used as described above is described in patent documents 1 and 2 below.

Documents of the prior art

Patent document

Patent document 1: japanese laid-open patent publication No. 2007-2173

Patent document 2: japanese patent application laid-open No. 2010-177401

Disclosure of Invention

Problems to be solved by the invention

The above-described expanding step may be performed at a low temperature of about-15 ℃ so that the die bond film is easily cleaved. However, when the dicing die-bonding film is used and the expanding process is performed under such low temperature conditions, the dicing tape may be peeled off from the ring frame in some cases.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a dicing die-bonding film suitable for performing a spreading process for obtaining a semiconductor chip with an adhesive layer under low temperature conditions.

Means for solving the problems

The dicing die-bonding film provided by the present invention includes a dicing tape and a die-bonding film. The dicing tape has a laminated structure including a substrate and an adhesive layer. The die-bonding film is releasably adhered to the adhesive layer of the dicing tape. The dicing tape of the dicing die-bonding film of the present invention showed a peel adhesion of 0.3N/20mm or more in a peel test under the conditions of-15 ℃ to the SUS plane, a peel angle of 180 ℃ and a peel speed of 300 mm/min (condition 1). The peel adhesion can be measured, for example, by bonding a test piece of a dicing tape cut out from the dicing tape to a SUS plane such as the surface of a SUS plate, and then subjecting the test piece to a peel test under the above-described condition 1. The dicing die-bonding film having such a structure can be used in the spreading step described above in the process of obtaining a semiconductor chip with an adhesive layer in the production of a semiconductor device.

In the manufacturing process of the semiconductor device, in order to obtain the semiconductor chip with the adhesive layer, as described above, a spreading step using a dicing die bonding film may be performed. When the expanding process is performed, the dicing die-bonding film and/or the dicing tape thereof is in a state where the ring frame is attached. The present inventors have found that a configuration in which the pressure-sensitive adhesive layer-side surface of the dicing tape of the dicing die-bonding film exhibits a peel adhesion of 0.3N/20mm or more to the SUS plane in the peel test under the above-mentioned condition 1 is suitable for suppressing the peeling of the dicing die-bonding film and/or the dicing tape thereof from the ring frame when the spreading step (using the dicing die-bonding film) as described above is performed under a low temperature condition of, for example, -15 ℃. For example, the examples and comparative examples are described below. This constitution is suitable in the following respects: in the expanding process performed at a low temperature of-15 ℃, for example, the loop frame adhering portion of the dicing tape of the dicing die-bonding film is continuously adhered to the loop frame against a tensile force of a degree received in the process. Further, the same constitution of the dicing die-bonding film is suitable for suppressing peeling of the dicing tape from the ring frame when the expansion step is performed under a low temperature condition of-15 ℃, for example, and the expansion step is preferably performed under a low temperature condition of about-15 ℃ so that the die-bonding film is easily cut. For example, the dicing die-bonding film of the present invention is suitable for performing the above-described expanding step for cleaving under low temperature conditions, in which the ring frame bonding portion of the dicing tape for dicing the die-bonding film is continuously bonded to the ring frame in the expanding step performed under low temperature conditions of-15 ℃.

As described above, the dicing die-bonding film is suitable for performing a spreading process for obtaining a semiconductor chip with an adhesive layer under low temperature conditions.

In the dicing die-bonding film of the present invention, the adhesive layer side surface of the dicing tape exhibits a peel force adhesion of preferably 0.35N/20mm or more, more preferably 0.4N/20mm or more to the SUS plane in the peel test under the above-mentioned condition 1, from the viewpoint of suppressing the peeling of the dicing tape from the ring frame when used in the expanding step under low-temperature conditions. The adhesive force is, for example, 10N/20mm or less.

In a tensile test performed on a dicing tape test piece having a width of 20mm under conditions of an initial inter-chuck distance of 100mm, -15 ℃ and a tensile speed of 200 mm/min, the dicing tape of the dicing die-bonding film preferably has a tensile stress of 50N/20mm or less, more preferably 45N/20mm or less, and still more preferably 40N/20mm or less, which is generated at a strain value of 30%. Such a configuration is suitable for suppressing residual stress generated in the ring frame bonded portion of the dicing tape after the expansion of the dicing die-bonding film when the expansion step is performed at a low temperature of-15 ℃ using the dicing die-bonding film, for example, and is therefore suitable for suppressing the peeling of the dicing tape from the ring frame. In addition, from the viewpoint of applying a tensile stress, which is a sufficient breaking force, to the die bond film by the dicing tape being spread in the spreading step using the present dicing die bond film to suitably cut the die bond film, the tensile stress is preferably 5N/20mm or more.

The dicing die-bonding film of the present invention has a storage modulus (shear storage modulus) at-15 ℃ of the pressure-sensitive adhesive layer of the dicing tape of preferably 0.1MPa or more, more preferably 0.15MPa or more, and still more preferably 0.2MPa or more. Such a constitution is suitable for ensuring a cohesive force for resisting a shear force when the shear force acts on the dicing tape adhesive layer of the dicing die-bonding film under a low-temperature environment, and therefore, the dicing tape of the dicing die-bonding film is suitable for suppressing peeling of the dicing tape from the ring frame when used in an expanding process under a low-temperature condition of about-15 ℃.

The dicing die-bonding film of the present invention has a storage modulus (shear storage modulus) at-15 ℃ of the adhesive layer of the dicing tape of preferably 100MPa or less, more preferably 80MPa or less, and still more preferably 50MPa or less. Such a configuration is suitable for suppressing residual stress generated in the ring frame bonded portion of the dicing tape after the expansion of the dicing die-bonding film when the expansion step is performed at a low temperature of-15 ℃ using the dicing die-bonding film, for example, and is therefore suitable for suppressing the peeling of the dicing tape from the ring frame.

In the dicing die-bonding film of the present invention, the adhesive layer of the dicing tape preferably contains a polymer having a glass transition temperature of-40 ℃ or lower. The content of the polymer in the pressure-sensitive adhesive layer is, for example, 50 mass% or more, preferably 60 mass% or more. Such a constitution is suitable for bringing the polymer and the dicing tape pressure-sensitive adhesive layer into a rubbery state, that is, a state having rubber elasticity, under a low temperature condition of about-15 ℃, and is therefore suitable in terms of suppressing peeling of the dicing tape from the ring frame when the dicing die-bonding film is used to perform, for example, a spreading step under a low temperature condition of-15 ℃.

In the dicing die-bonding film of the present invention, the pressure-sensitive adhesive layer of the dicing tape preferably contains an acrylic polymer and an isocyanate-based crosslinking agent. With such a configuration, the adhesive layer of the dicing tape can be easily controlled in physical properties such as adhesive force, storage modulus, and cohesive force.

In the dicing die-bonding film of the present invention, the content of the isocyanate-based crosslinking agent in the dicing tape pressure-sensitive adhesive layer is preferably 0.1 part by mass or more, more preferably 0.15 part by mass or more, and still more preferably 0.2 part by mass or more, per 100 parts by mass of the acrylic polymer. Such a configuration is suitable in that the dicing tape pressure-sensitive adhesive layer secures the above-described cohesive force under low temperature conditions, and therefore, is suitable in that peeling of the dicing tape from the ring frame is suppressed when the dicing die-bonding film of the present invention is used in the expanding step under low temperature conditions of about-15 ℃.

In the dicing die-bonding film of the present invention, the content of the isocyanate-based crosslinking agent in the pressure-sensitive adhesive layer of the dicing tape is preferably 2 parts by mass or less, more preferably 1.8 parts by mass or less, and still more preferably 1.5 parts by mass or less, per 100 parts by mass of the acrylic polymer. Such a configuration is suitable for suppressing residual stress generated in the ring frame bonded portion of the dicing tape after the expansion of the dicing die-bonding film when the expansion step is performed at a low temperature of-15 ℃ using the dicing die-bonding film, for example, and therefore is suitable for suppressing the peeling of the dicing tape from the ring frame.

Drawings

Fig. 1 is a top view of a dicing die-bonding film according to an embodiment of the present invention.

Fig. 2 is a schematic cross-sectional view of the dicing die-bonding film shown in fig. 1.

Fig. 3 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1 and 2.

Fig. 4 shows a subsequent process to that shown in fig. 3.

Fig. 5 shows a process subsequent to the process shown in fig. 4.

Fig. 6 shows a subsequent process to that shown in fig. 5.

Fig. 7 shows a process subsequent to the process shown in fig. 6.

Fig. 8 shows a subsequent process to the process shown in fig. 7.

Fig. 9 shows a part of steps in a modification of the semiconductor device manufacturing method using the dicing die-bonding film shown in fig. 1 and 2.

Fig. 10 shows a subsequent process to the process shown in fig. 9.

Fig. 11 shows a part of steps in a modification of the semiconductor device manufacturing method using the dicing die-bonding film shown in fig. 1 and 2.

Fig. 12 shows a process subsequent to the process shown in fig. 11.

Description of the reference numerals

X-cut die-bonding film

10 cutting belt

11 base material

12 adhesive layer

20. 21 die bonding film

W, 30A, 30B semiconductor wafer

30C semiconductor wafer division body

30a modified region

30b dividing groove

31 semiconductor chip

Detailed Description

Fig. 1 and 2 show a dicing die-bonding film X according to an embodiment of the present invention. Fig. 1 is a plan view of the dicing die-bonding film X. Fig. 2 is a schematic cross-sectional view of the dicing die-bonding film X.

The dicing die-bonding film X has a laminated structure including the dicing tape 10 and the die-bonding film 20. The dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12. The adhesive layer 12 has an adhesive surface 12a on the die-bonding film 20 side. The die-bonding film 20 is releasably adhered to the adhesive layer 12 of the dicing tape 10 and/or the adhesive surface 12a thereof. In the present embodiment, the dicing tape 10 and the die-bonding film 20 have a disk shape and are arranged concentrically as shown in fig. 1. A ring frame may be attached to an area around the die bond film not covered by the die bond film 20 in the adhesive layer 12 of the dicing tape 10. The ring frame is a member that is mechanically abutted when the ring frame is attached to the dicing tape 10 and the workpiece is conveyed by a conveying mechanism such as a conveying arm provided in various apparatuses. Such a dicing die-bonding film X can be used in a spreading step in a process of obtaining a semiconductor chip with an adhesive layer in the manufacture of a semiconductor device.

The base material 11 of the dicing tape 10 in the dicing die-bonding film X is an element that functions as a support in the dicing tape 10 and/or the dicing die-bonding film X. The substrate 11 is, for example, a plastic substrate, and a plastic film can be suitably used as the plastic substrate. Examples of the material constituting the plastic substrate include polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyether imide, polyamide, wholly aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, aramid, fluorine resin, cellulose resin, and silicone resin. Examples of the polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, polymethylpentene, an ethylene-vinyl acetate copolymer, an ionomer resin, an ethylene- (meth) acrylic acid copolymer, an ethylene- (meth) acrylate copolymer, an ethylene-butene copolymer, and an ethylene-hexene copolymer. Examples of the polyester include polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. The substrate 11 may be formed of one material or two or more materials. The substrate 11 may have a single-layer structure or a multi-layer structure. When the pressure-sensitive adhesive layer 12 on the substrate 11 is of an ultraviolet-curable type as described later, the substrate 11 preferably has ultraviolet transparency. When the substrate 11 is formed of a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film.

The substrate 11 preferably has heat shrinkability. In the case where the base material 11 is formed of a plastic film, the base material 11 is preferably a biaxially stretched film in terms of achieving isotropic heat shrinkability of the dicing tape 10 and/or the base material 11.

The surface of the substrate 11 on the side of the pressure-sensitive adhesive layer 12 may be subjected to a physical treatment, a chemical treatment, or an undercoating treatment for improving adhesion to the pressure-sensitive adhesive layer 12. Examples of the physical treatment include corona treatment, plasma treatment, blast treatment, ozone exposure treatment, flame exposure treatment, high-voltage shock exposure treatment, and ionizing radiation treatment. The chemical treatment may be, for example, a chromic acid treatment.

The thickness of the base material 11 is preferably 40 μm or more, preferably 50 μm or more, and more preferably 60 μm or more, from the viewpoint of ensuring the strength with which the base material 11 functions as a support in the dicing tape 10 and/or the dicing die-bonding film X. From the viewpoint of achieving appropriate flexibility of the dicing tape 10 and/or the dicing die-bonding film X, the thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 μm or less.

The adhesive layer 12 of the dicing tape 10 contains an adhesive. The adhesive may be an adhesive whose adhesive force can be intentionally reduced by an external action during the use of the dicing die-bonding film X (adhesive force-reducible adhesive), or an adhesive whose adhesive force is not reduced or not substantially reduced by an external action during the use of the dicing die-bonding film X (adhesive force-nondecreasing adhesive). Whether an adhesive strength-reducible adhesive or an adhesive strength-nondegradable adhesive is used as the adhesive in the adhesive layer 12 can be appropriately selected depending on the method, conditions, and the like of singulating the semiconductor chips into pieces using the dicing die-bonding film X, and the manner of using the dicing die-bonding film X.

In the case of using an adhesive force reducible adhesive as the adhesive in the adhesive layer 12, during the use of the dicing die-bonding film X, a state in which the adhesive layer 12 exhibits a relatively high adhesive force and a state in which it exhibits a relatively low adhesive force can be separately used. For example, in order to suppress or prevent the die bond film 20 from being lifted off or peeled off from the adhesive layer 12 when the dicing die bond film X is used in the spreading step described later, the high adhesive force state of the adhesive layer 12 may be used, and in the later-described pick-up step for picking up the semiconductor chip with the adhesive layer from the dicing tape 10 of the dicing die bond film X, the low adhesive force state of the adhesive layer 12 may be used in order to easily pick up the semiconductor chip with the adhesive layer from the adhesive layer 12.

Examples of such an adhesive force-reducing adhesive agent include an adhesive agent curable by irradiation with radiation during use of the dicing die-bonding film X (radiation-curable adhesive agent), a heat-expandable adhesive agent, and the like. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of pressure-sensitive adhesive having a reduced adhesive strength may be used, or two or more types of pressure-sensitive adhesive having a reduced adhesive strength may be used. The entire adhesive layer 12 may be formed of an adhesive force-reducing adhesive, or a part of the adhesive layer 12 may be formed of an adhesive force-reducing adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the pressure-sensitive adhesive layer 12 may be entirely formed of a pressure-sensitive adhesive of which the adhesive strength is reducible, or a predetermined portion (for example, a central region which is a region to be bonded to a workpiece) of the pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive of which the adhesive strength is reducible, and another portion (for example, a region located outside the central region which is a region to be bonded to a ring frame) may be formed of a pressure-sensitive adhesive of which the adhesive strength is not reducible. In the case where the adhesive layer 12 has a multilayer structure, all layers forming the multilayer structure may be formed of an adhesive force-reducible adhesive, or some layers in the multilayer structure may be formed of an adhesive force-reducible adhesive.

Examples of the radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 12 include pressure-sensitive adhesives of a type that is cured by irradiation with electron beams, ultraviolet rays, alpha rays, beta rays, gamma rays, or X rays, and particularly a type that is cured by irradiation with ultraviolet rays (ultraviolet-curable pressure-sensitive adhesives) can be used suitably.

Examples of the radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 12 include an additive-type radiation-curable pressure-sensitive adhesive containing a base polymer such as an acrylic polymer as an acrylic pressure-sensitive adhesive, and a radiation-polymerizable monomer component and an oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond.

The acrylic polymer preferably contains a maximum mass ratio of monomer units derived from a (meth) acrylate ester. "(meth) acrylic acid" means "acrylic acid" and/or "methacrylic acid". Examples of the (meth) acrylate ester of the monomer unit for forming the acrylic polymer, that is, the (meth) acrylate ester as the constituent monomer of the acrylic polymer include alkyl (meth) acrylate, cycloalkyl (meth) acrylate, and aryl (meth) acrylate. Examples of the alkyl (meth) acrylate include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, sec-butyl ester, tert-butyl ester, pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (i.e., lauryl ester), tridecyl ester, tetradecyl ester, hexadecyl ester, octadecyl ester, and eicosyl ester of (meth) acrylic acid. Examples of the cycloalkyl (meth) acrylate include cyclopentyl and cyclohexyl (meth) acrylates. Examples of the aryl (meth) acrylate include phenyl (meth) acrylate and benzyl (meth) acrylate. As the constituent monomer of the acrylic polymer, one kind of (meth) acrylate may be used, or two or more kinds of (meth) acrylates may be used. As the (meth) acrylate for the acrylic polymer, 2-ethylhexyl acrylate can be preferably used. In addition, the proportion of the (meth) acrylate in the entire constituent monomers of the acrylic polymer is preferably 40 mol% or more, and more preferably 60 mol% or more, in terms of suitably exhibiting basic characteristics such as adhesiveness with the (meth) acrylate in the pressure-sensitive adhesive layer 12. The acrylic polymer may be obtained by polymerizing a raw material monomer for forming the acrylic polymer.

The acrylic polymer may contain a monomer unit derived from one or two or more other monomers copolymerizable with the (meth) acrylate ester, from the viewpoint of, for example, modifying the cohesive force and heat resistance thereof. Examples of other copolymerizable monomers used for forming the monomer unit of the acrylic polymer, that is, other copolymerizable monomers as constituent monomers of the acrylic polymer include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, nitrogen atom-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the nitrogen atom-containing monomer include 4-acryloylmorpholine. Examples of the epoxy group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, and (meth) acryloyloxynaphthalenesulfonic acid. Examples of the monomer having a phosphoric acid group include 2-hydroxyethyl acryloyl phosphate. As the copolymerizable monomer for the acrylic polymer, a hydroxyl group-containing monomer and/or a nitrogen atom-containing monomer is preferably used, and 2-hydroxyethyl (meth) acrylate and/or 4-acryloylmorpholine are more preferably used.

When the acrylic polymer contains a monomer unit derived from a hydroxyl group-containing monomer, that is, when the acrylic polymer contains a hydroxyl group-containing monomer as a constituent monomer thereof, the proportion of the hydroxyl group-containing monomer in the acrylic polymer is preferably 1 mol% or more, more preferably 3 mol% or more, preferably 50 mol% or less, more preferably 30 mol% or less.

When the acrylic polymer contains a monomer unit derived from a nitrogen atom-containing monomer, that is, when the acrylic polymer contains a nitrogen atom-containing monomer as a constituent monomer thereof, the proportion of the nitrogen atom-containing monomer in the acrylic polymer is preferably 1 mol% or more, more preferably 3 mol% or more, preferably 50 mol% or less, more preferably 30 mol% or less.

The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as a (meth) acrylate ester in order to form a crosslinked structure in the polymer skeleton. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, polyglycidyl (meth) acrylate, polyester (meth) acrylate, and urethane (meth) acrylate. "(meth) acrylate" means "acrylate" and/or "methacrylate". As the constituent monomer of the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. In order to appropriately exhibit basic characteristics such as adhesiveness with a (meth) acrylate in the pressure-sensitive adhesive layer 12, the proportion of the polyfunctional monomer in the entire constituent monomers of the acrylic polymer is preferably 40 mol% or less, and preferably 30 mol% or less.

The acrylic polymer may be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. In view of high cleanliness in a semiconductor device manufacturing method using the dicing tape 10 and/or the dicing die-bonding film X, the low-molecular-weight substance in the pressure-sensitive adhesive layer 12 in the dicing tape 10 and/or the dicing die-bonding film X is preferably small, and in this case, the weight average molecular weight of the acrylic polymer is preferably 10 ten thousand or more, and more preferably 20 ten thousand to 300 ten thousand. The weight average molecular weight (Mw) of the acrylic polymer is a value in terms of standard polystyrene measured by Gel Permeation Chromatography (GPC).

The glass transition temperature (Tg) of the base polymer contained in the adhesive layer 12 as an adhesive is preferably-40 ℃. As the glass transition temperature of the polymer, a glass transition temperature (theoretical value) obtained based on the following Fox formula can be used. The Fox equation is a relationship between the glass transition temperature Tg of a polymer and the glass transition temperature Tgi of the homopolymer of each constituent monomer in the polymer. In the following Fox formula, Tg represents the glass transition temperature (. degree. C.) of the polymer, Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (. degree. C.) of the homopolymer of the monomer i. As the glass transition temperature of the homopolymer, a literature value can be used, and for example, the glass transition temperatures of various homopolymers are listed in "synthetic resin for coating of New Polymer library 7" (North Ooka Co., Ltd., Polymer journal, 1995), "list of acrylates (1997 edition)" (MITSUSHISHIHI RAYON CO., LTD.). On the other hand, the glass transition temperature of a homopolymer of a monomer can be determined by the method specifically described in Japanese patent laid-open No. 2007-51271.

FoX equation 1/(273+ Tg) ═ Σ [ Wi/(273+ Tgi) ]

The pressure-sensitive adhesive layer 12 and/or the pressure-sensitive adhesive used for forming the same may contain, for example, a crosslinking agent in order to increase the number average molecular weight of a base polymer such as an acrylic polymer. Examples of the crosslinking agent for forming a crosslinked structure by reacting with a base polymer such as an acrylic polymer include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine crosslinking agents, which are isocyanate crosslinking agents. The content of the crosslinking agent in the pressure-sensitive adhesive layer 12 and/or the pressure-sensitive adhesive for forming the same is preferably 0.1 part by mass or more, more preferably 0.15 part by mass or more, and still more preferably 0.2 part by mass or more, per 100 parts by mass of a base polymer such as an acrylic polymer. The content is preferably 2 parts by mass or less, more preferably 1.8 parts by mass or less, and still more preferably 1.5 parts by mass or less.

Examples of the radiation-polymerizable monomer component for forming the radiation-curable pressure-sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1, 4-butanediol di (meth) acrylate. Examples of the radiation-polymerizable oligomer component for forming the radiation-curable pressure-sensitive adhesive include various oligomers such as urethane type, polyether type, polyester type, polycarbonate type, and polybutadiene type, and a molecular weight of about 100 to 30000 is preferable. The total content of the radiation-polymerizable monomer component and oligomer component in the radiation-curable pressure-sensitive adhesive is determined within a range that can suitably reduce the adhesive strength of the pressure-sensitive adhesive layer 12 to be formed, and is preferably 5 to 500 parts by mass, and more preferably 40 to 150 parts by mass, based on 100 parts by mass of a base polymer such as an acrylic polymer. As the additive type radiation-curable pressure-sensitive adhesive, for example, one disclosed in Japanese patent application laid-open No. 60-196956 can be used.

Examples of the radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 12 include internal type radiation-curable pressure-sensitive adhesives containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at a polymer side chain, a polymer main chain, or a polymer main chain end. Such an internal radiation curable pressure-sensitive adhesive is suitable for suppressing an undesirable change in adhesive properties with time due to the movement of low molecular weight components in the pressure-sensitive adhesive layer 12 to be formed.

The base polymer contained in the internal radiation curable pressure-sensitive adhesive preferably has an acrylic polymer as a basic skeleton. As the acrylic polymer forming such a basic skeleton, the acrylic polymer described above can be used. Examples of the method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer include the following methods: after a raw material monomer containing a monomer having a predetermined functional group (1 st functional group) is copolymerized to obtain an acrylic polymer, a compound having a predetermined functional group (2 nd functional group) capable of reacting with the 1 st functional group to bond and a radiation-polymerizable carbon-carbon double bond is subjected to a condensation reaction or an addition reaction with the acrylic polymer while maintaining the radiation-polymerizability of the carbon-carbon double bond.

Examples of the combination of the 1 st functional group and the 2 nd functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridine group, an aziridine group and a carboxyl group, a hydroxyl group and an isocyanate group, and an isocyanate group and a hydroxyl group. Among these combinations, a combination of a hydroxyl group and an isocyanate group, and a combination of an isocyanate group and a hydroxyl group are preferable from the viewpoint of easiness of reaction follow-up. Further, since the production of a polymer having a highly reactive isocyanate group is technically difficult, it is more preferable that the 1 st functional group on the acrylic polymer side is a hydroxyl group and the 2 nd functional group is an isocyanate group from the viewpoint of easiness of production or acquisition of the acrylic polymer. In this case, examples of the isocyanate compound having both a radiation-polymerizable carbon-carbon double bond and an isocyanate group as the 2 nd functional group, that is, the isocyanate compound having a radiation-polymerizable unsaturated functional group include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate (MOI), and m-isopropenyl- α, α -dimethylbenzyl isocyanate.

The radiation curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α -ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, halogenated ketones, acyl phosphine oxides, and acyl phosphonates. Examples of the α -ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α -hydroxy- α, α' -dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, and 1-hydroxycyclohexylphenylketone. Examples of the acetophenone-based compound include methoxyacetophenone, 2-dimethoxy-1, 2-diphenylethan-1-one, 2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio) -phenyl ] -2-morpholinopropan-1-one. Examples of the benzoin ether-based compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal compound include benzildimethylketal. Examples of the aromatic sulfonyl chloride compound include 2-naphthalenesulfonyl chloride. Examples of the optically active oxime compound include 1-phenyl-1, 2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone-based compound include benzophenone, benzoylbenzoic acid, and 3, 3' -dimethyl-4-methoxybenzophenone. Examples of the thioxanthone-based compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2, 4-dimethylthioxanthone, isopropylthioxanthone, 2, 4-dichlorothioxanthone, 2, 4-diethylthioxanthone, and 2, 4-diisopropylthioxanthone. The content of the photopolymerization initiator in the radiation curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 20 parts by mass per 100 parts by mass of a base polymer such as an acrylic polymer.

The heat-expandable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive containing a component (a foaming agent, heat-expandable microspheres, or the like) which expands and expands by heating. Examples of the blowing agent include various inorganic blowing agents and organic blowing agents. Examples of the thermally expandable microspheres include microspheres in which a material that is easily vaporized and expanded by heating is enclosed in a shell. Examples of the inorganic blowing agent include ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium borohydride, and azides. Examples of the organic blowing agent include chlorofluoroalkanes such as trichloromonofluoromethane and dichloromonofluoromethane, azobisisobutyronitrile, azodicarbonamide, azo compounds such as barium azodicarboxylate, hydrazine compounds such as p-toluenesulfonyl hydrazide, diphenylsulfone-3, 3 '-disulfonyl hydrazide, 4' -oxybis (benzenesulfonyl hydrazide) and allylbis (sulfonyl hydrazide), semicarbazide compounds such as p-toluenesulfonyl semicarbazide and 4,4 '-oxybis (benzenesulfonylamino urea), triazole compounds such as 5-morpholinyl-1, 2,3, 4-thiatriazole and N-nitroso compounds such as N, N' -dinitrosopentamethylenetetramine and N, N '-dimethyl-N, N' -dinitrosoterephthalamide. Examples of the material which is easily vaporized and expanded by heating to form the thermally expandable microspheres as described above include isobutane, propane, and pentane. The thermally expandable microspheres can be produced by enclosing a substance which is easily vaporized and expanded by heating in a shell-forming substance by an agglomeration method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal fusion properties or a substance which can be broken by the action of thermal expansion of the encapsulating substance can be used. Examples of such a substance include a vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.

Examples of the non-reducing adhesive strength type pressure-sensitive adhesive include pressure-sensitive adhesives, and the like in which the above-described radiation-curable pressure-sensitive adhesive having a reduced adhesive strength is cured by irradiation with radiation. The radiation-curable pressure-sensitive adhesive can exhibit adhesiveness due to a polymer component even when the adhesive force is reduced by radiation curing depending on the type and content of the polymer component contained therein, and can exhibit adhesive force that can be used for adhesively holding an adherend in a predetermined use form. One kind of the non-reducing adhesive strength adhesive may be used in the adhesive layer 12 of the present embodiment, or two or more kinds of the non-reducing adhesive strength adhesives may be used. The entire pressure-sensitive adhesive layer 12 may be formed of a non-adhesive-force-reducing pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a non-adhesive-force-reducing pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the pressure-sensitive adhesive layer 12 may be entirely formed of a non-adhesive-force-reducing pressure-sensitive adhesive, or, as described above, a predetermined portion (for example, a region located outside the wafer bonding target region as the ring frame bonding target region) of the pressure-sensitive adhesive layer 12 may be formed of a non-adhesive-force-reducing pressure-sensitive adhesive, and the other portion (for example, a central region as the wafer bonding target region) may be formed of a pressure-reducing pressure-sensitive adhesive. When the pressure-sensitive adhesive layer 12 has a multilayer structure, all layers forming the multilayer structure may be formed of a non-adhesive-force-reducing pressure-sensitive adhesive, or some layers in the multilayer structure may be formed of a non-adhesive-force-reducing pressure-sensitive adhesive.

On the other hand, as the pressure-sensitive adhesive for the pressure-sensitive adhesive layer 12, for example, an acrylic adhesive or a rubber adhesive containing an acrylic polymer as a base polymer can be used. In the case where the pressure-sensitive adhesive layer 12 contains an acrylic adhesive as the pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic adhesive preferably contains a monomer unit derived from a (meth) acrylate ester in the largest mass ratio. Examples of such acrylic polymers include those described above with respect to the radiation curable pressure-sensitive adhesive.

The pressure-sensitive adhesive layer 12 and/or the pressure-sensitive adhesive used for forming the same may contain, in addition to the above-described components, a crosslinking accelerator, a tackifier, an antioxidant, and a colorant such as a pigment and a dye. The colorant may be a compound which is colored by being irradiated with radiation. Examples of such compounds include leuco dyes.

The thickness of the adhesive layer 12 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably 5 to 25 μm. Such a configuration is preferable, for example, in the case where the pressure-sensitive adhesive layer 12 contains a radiation-curable pressure-sensitive adhesive, in terms of obtaining a balance of the adhesive force of the pressure-sensitive adhesive layer 12 to the die-bonding film 20 before and after radiation curing.

The dicing tape 10 described above has a peel adhesion of 0.3N/20mm or more, preferably 0.35N/20mm or more, and more preferably 0.4N/20mm or more, on the surface on the pressure-sensitive adhesive layer 12 side in a peel test under the conditions of-15 ℃ to the SUS plane, a peel angle of 180 DEG, and a peel speed of 300 mm/min (condition 1). The adhesive force is, for example, 10N/20mm or less. The peel adhesion can be measured, for example, by bonding a test piece of a dicing tape cut out from the dicing tape 10 to a SUS plane such as a surface of a SUS plate, and then subjecting the test piece to a peel test under the above-described condition 1. For the measurement of the peel adhesion, for example, a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu corporation) can be used. The peel adhesion of the dicing tape 10 can be adjusted by, for example, adjusting the composition (type and ratio) of monomers used for forming the polymer in the pressure-sensitive adhesive layer 12, selecting the type of the crosslinking agent used and adjusting the amount thereof, adjusting the molecular weight of the polymer, and adding a tackifier.

In the dicing tape 10, in the tensile test performed on a test piece of the dicing tape 10 having a width of 20mm under the conditions of an initial inter-chuck distance of 100mm, -15 ℃, and a tensile speed of 200 mm/min, the tensile stress generated at a strain value of 30% is preferably 50N/20mm or less, more preferably 45N/20mm or less, and still more preferably 40N/20mm or less. The tensile stress is, for example, 5N/20mm or more. The tensile stress can be measured, for example, using a tensile tester (trade name "Autograph AGS-50 NX", manufactured by Shimadzu corporation). The tensile stress in the dicing tape 10 can be adjusted by, for example, selection of a constituent material of the substrate 11, adjustment of the thickness of the substrate 11, and control of the crystallinity based on adjustment of the film forming conditions and the stretching conditions for the substrate 11.

The storage modulus (shear storage modulus) of the pressure-sensitive adhesive layer 12 of the dicing tape 10 at-15 ℃ is preferably 0.1MPa or more, more preferably 0.15MPa or more, and still more preferably 0.2MPa or more. The storage modulus is preferably 100MPa or less, more preferably 80MPa or less, and still more preferably 50MPa or less. The storage modulus can be determined by, for example, dynamic viscoelasticity measurement using a dynamic viscoelasticity measurement apparatus (trade name "ARES", manufactured by Rheometric, inc.). This measurement was carried out in a state where cylindrical pellets (diameter 7.9mm) as a sample for measurement were fixed to a jig of a parallel plate having a diameter 7.9 mm. The cylindrical pellet as the measurement sample can be obtained by punching out an adhesive sheet having a thickness of about 2mm, which is formed of a constituent material of the adhesive layer to be evaluated for storage modulus. In the present measurement, the measurement mode is a shear mode, the measurement temperature range is, for example, -70 ℃ to 150 ℃, the temperature increase rate is 5 ℃/min, and the frequency is 1 Hz. The storage modulus of the pressure-sensitive adhesive layer 12 can be adjusted by, for example, adjusting the composition (kind and ratio) of monomers used for forming the polymer in the pressure-sensitive adhesive layer 12, selecting the kind of the crosslinking agent used and adjusting the amount thereof, adjusting the molecular weight of the polymer, adding an oligomer, and adding a filler.

The die-bonding film 20 in the dicing die-bonding film X has a structure that can function as a thermosetting die-bonding adhesive. The die-bonding film 20 may have a composition containing a thermosetting resin and a thermoplastic resin as resin components, or may have the following composition: comprising a thermoplastic resin having a thermosetting functional group which can react with a curing agent to bond. When the die-bonding film 20 has a composition containing a thermoplastic resin having a thermosetting functional group, the die-bonding film 20 does not need to further contain a thermosetting resin. Such a die-bonding film 20 may have a single-layer structure or a multilayer structure having different compositions between adjacent layers.

When the die-bonding film 20 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. The die-bonding film 20 may contain one kind of thermosetting resin, or may contain two or more kinds of thermosetting resins. Epoxy resin tends to have a small content of ionic impurities or the like that may cause corrosion of a semiconductor chip to be die-bonded, and is therefore preferred as the thermosetting resin in the die-bonding film 20. As a curing agent for making the epoxy resin thermosetting, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol a type, bisphenol F type, bisphenol S type, brominated bisphenol a type, hydrogenated bisphenol a type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trishydroxyphenylmethane type, tetrahydroxyphenylethane type, hydantoin type, triglycidyl isocyanurate type, and glycidylamine type epoxy resins. Phenol novolac type epoxy resins, o-cresol novolac type epoxy resins, biphenyl type epoxy resins, trihydroxyphenyl methane type epoxy resins, and tetrahydroxyphenyl ethane type epoxy resins are preferred as the epoxy resins in the die-bonding film 20 because they have high reactivity with phenolic resins as curing agents and are excellent in heat resistance.

Examples of the phenol resin which can function as a curing agent for an epoxy resin include novolak phenol resins, resol phenol resins, and polyoxystyrenes such as polyoxystyrenes. Examples of the novolak type phenol resin include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, and a nonylphenol novolak resin. The die-bonding film 20 may contain one kind of phenol resin, or may contain two or more kinds of phenol resins as a curing agent for the epoxy resin. When a phenol novolac resin or a phenol aralkyl resin is used as a curing agent for an epoxy resin as an adhesive for die bonding, the adhesive tends to have improved connection reliability, and therefore, it is preferable as the curing agent for an epoxy resin in the die bonding film 20.

When the die-bonding film 20 contains an epoxy resin and a phenol resin as a curing agent thereof, the two resins are blended in a ratio of preferably 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents, to 1 equivalent of an epoxy group in the epoxy resin and to a hydroxyl group in the phenol resin. Such a configuration is preferable in that the curing reaction of the epoxy resin and the phenol resin is sufficiently performed when the die-bonding film 20 is cured.

The content ratio of the thermosetting resin in the die-bonding film 20 is preferably 5 to 60% by mass, and more preferably 10 to 50% by mass, from the viewpoint of appropriately expressing the function of the die-bonding film 20 as a thermosetting adhesive.

The thermoplastic resin in the die-bonding film 20 functions as, for example, an adhesive, and when the die-bonding film 20 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermoplastic resin include acrylic resins, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymers, ethylene-acrylic acid ester copolymers, polybutadiene resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6, 6-nylon, phenoxy resins, saturated polyester resins such as polyethylene terephthalate and polybutylene terephthalate, polyamideimide resins, and fluorine resins. The die-bonding film 20 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. Acrylic resins are preferred as the thermoplastic resin in the die-bonding film 20 because they have few ionic impurities and high heat resistance.

When the die-bonding film 20 contains an acrylic resin as the thermoplastic resin, the acrylic resin preferably contains a monomer unit derived from a (meth) acrylate ester in a maximum mass ratio.

Examples of the (meth) acrylate ester of the monomer unit for forming the acrylic resin, that is, the (meth) acrylate ester as the constituent monomer of the acrylic resin include alkyl (meth) acrylate, cycloalkyl (meth) acrylate, and aryl (meth) acrylate. Examples of such (meth) acrylates include the alkyl (meth) acrylates described above as the constituent monomers of the acrylic polymer for the pressure-sensitive adhesive layer 12. As the constituent monomer of the acrylic resin, one kind of (meth) acrylate may be used, or two or more kinds of (meth) acrylates may be used.

The acrylic resin may contain monomer units derived from one or two or more other monomers copolymerizable with the (meth) acrylic acid ester, for example, from the viewpoint of modification of the cohesive force and heat resistance thereof. Examples of other copolymerizable monomers used for forming the monomer unit of the acrylic resin, that is, other copolymerizable monomers as constituent monomers of the acrylic resin include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, nitrogen atom-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile. Specific examples of these monomers include those described above as the constituent monomers of the acrylic polymer for the pressure-sensitive adhesive layer 12.

When the die-bonding film 20 has a composition containing a thermoplastic resin having a thermosetting functional group, an acrylic resin having a thermosetting functional group can be used as the thermoplastic resin, for example. The acrylic resin used for forming the thermosetting functional group-containing acrylic resin preferably contains the largest proportion by mass of monomer units derived from a (meth) acrylate ester. As such a (meth) acrylate, for example, the same (meth) acrylate as the monomer described above as the constituent monomer of the acrylic polymer for the pressure-sensitive adhesive layer 12 can be used. On the other hand, examples of the thermosetting functional group used for forming the thermosetting functional group-containing acrylic resin include glycidyl groups, carboxyl groups, hydroxyl groups, and isocyanate groups. Among these, glycidyl groups and carboxyl groups can be suitably used. That is, as the acrylic resin having a thermosetting functional group, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be suitably used. In addition, a curing agent that can react with the thermosetting functional group in the thermosetting functional group-containing acrylic resin is selected according to the kind of the thermosetting functional group. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, the same curing agent as described above as the curing agent for epoxy resin can be used as the curing agent.

In order to achieve a certain degree of crosslinking in the die-bonding film 20 before curing for die-bonding, for example, a polyfunctional compound capable of reacting with and bonding to a functional group or the like at the molecular chain end of the resin component contained in the die-bonding film 20 is preferably blended in advance as a crosslinking agent in the resin composition for forming the die-bonding film. Such a configuration is preferable in terms of improving the adhesion property at high temperature to the die-bonding film 20 and in terms of improving the heat resistance. Examples of such a crosslinking agent include polyisocyanate compounds. Examples of the polyisocyanate compound include toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5-naphthalene diisocyanate, and an adduct of a polyol and a diisocyanate. The content of the crosslinking agent in the resin composition for forming a die-bonding film is preferably 0.05 parts by mass or more in terms of improving the cohesive force of the formed die-bonding film 20 and 7 parts by mass or less in terms of improving the adhesive force of the formed die-bonding film 20, relative to 100 parts by mass of the resin having the functional group that can react with the crosslinking agent to cause bonding. As the crosslinking agent in the die-bonding film 20, other polyfunctional compounds such as epoxy resins and polyisocyanate compounds may be used in combination.

The glass transition temperature of the acrylic resin and the acrylic resin containing a thermosetting functional group blended in the die-bonding film 20 is preferably-40 to 10 ℃. As the glass transition temperature of the polymer, the glass transition temperature (theoretical value) obtained based on the above-mentioned FoX formula can be used.

The die-bonding film 20 may contain a filler. The incorporation of the filler into the die-bonding film 20 is preferable in terms of adjusting physical properties of the die-bonding film 20, such as elastic modulus, yield strength, and elongation at break. Examples of the filler include inorganic fillers and organic fillers. The filler may have various shapes such as a spherical shape, a needle shape, and a plate shape. The die-bonding film 20 may contain one kind of filler, or may contain two or more kinds of fillers.

Examples of the constituent material of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. Examples of the constituent material of the inorganic filler include elemental metals such as aluminum, gold, silver, copper, and nickel, alloys, amorphous carbon, and graphite. When the die-bonding film 20 contains an inorganic filler, the content of the inorganic filler is preferably 10% by mass or more, and more preferably 20% by mass or more. The content is preferably 50% by mass or less, more preferably 45% by mass or less.

Examples of the constituent material of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyether ether ketone, polyetherimide, and polyesterimide. When the die-bonding film 20 contains an organic filler, the content of the organic filler is preferably 2% by mass or more, and more preferably 5% by mass or more. The content is preferably 20% by mass or less, and more preferably 15% by mass or less.

When the die-bonding film 20 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 μm, and more preferably 0.05 to 1 μm. The filler having an average particle diameter of 0.005 μm or more is preferably used in order to achieve high wettability and adhesiveness of the die-bonding film 20 to an adherend such as a semiconductor wafer. The filler having an average particle diameter of 10 μm or less is preferably used in order to obtain a sufficient filler-adding effect and to ensure heat resistance of the die-bonding film 20. The average particle diameter of the filler can be determined, for example, by using a photometric particle size distribution meter (trade name "LA-910", manufactured by HORIBA, ltd.).

The die-bonding film 20 may contain a heat curing catalyst. The incorporation of the thermosetting catalyst into the die-bonding film 20 is preferable in terms of sufficiently advancing the curing reaction of the resin component at the time of curing the die-bonding film 20 and increasing the curing reaction speed. Examples of such a thermosetting catalyst include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihaloborane compounds. Examples of the imidazole-based compound include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1, 2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-diamino-6- [2 '-methylimidazolyl- (1') ] -ethyl-s-triazine, 2, 4-diamino-6- [2 ' -undecylimidazolyl- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2 ' -ethyl-4 ' -methylimidazolyl- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2 ' -methylimidazolyl- (1 ') ] -ethyl-s-triazine isocyanuric acid adduct, 2-phenyl-4, 5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole. Examples of the triphenylphosphine-based compound include triphenylphosphine, tris (butylphenyl) phosphine, tris (p-methylphenyl) phosphine, tris (nonylphenyl) phosphine, diphenyltolylphosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. The triphenylphosphine-based compound also includes a compound having both a triphenylphosphine structure and a triphenylborane structure. Examples of such compounds include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-tolylborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of the amine compound include monoethanolamine trifluoroborate and dicyandiamide. Examples of the trihaloborane-based compound include trichloroborane. The die-bonding film 20 may contain one kind of heat curing catalyst, or may contain two or more kinds of heat curing catalysts.

The die-bonding film 20 may contain one or two or more other components as necessary. Examples of the other components include a flame retardant, a silane coupling agent, and an ion scavenger.

The thickness of the die-bonding film 20 is preferably 3 μm or more, more preferably 7 μm or more, and still more preferably 10 μm or more. The thickness of the die-bonding film 20 is preferably 150 μm or less, more preferably 140 μm or less, and still more preferably 135 μm or less.

The dicing die-bonding film X having the above-described structure can be manufactured, for example, as follows.

The dicing tape 10 for dicing the die-bonding film X can be produced by providing the adhesive layer 12 on the prepared base material 11. For example, the resin substrate 11 can be produced by a film-forming method such as a calendering film-forming method, a casting method in an organic solvent, a inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method. The film and/or the substrate 11 after the film formation is subjected to a predetermined surface treatment as necessary. In the formation of the pressure-sensitive adhesive layer 12, for example, after preparing a pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer, the composition is first applied to the substrate 11 or a predetermined separator to form a pressure-sensitive adhesive composition layer. Examples of the method for applying the adhesive composition include roll coating, screen coating, and gravure coating. Next, the adhesive composition layer is heated and dried as necessary, and is subjected to a crosslinking reaction as necessary. The heating temperature is, for example, 80 to 150 ℃, and the heating time is, for example, 0.5 to 5 minutes. When the adhesive layer 12 is formed on the separator, the separator-attached adhesive layer 12 is bonded to the substrate 11, and thereafter, the separator is peeled off. In this way, the dicing tape 10 having a laminated structure of the base material 11 and the pressure-sensitive adhesive layer 12 was produced.

In the production of the die-bonding film 20 by dicing the die-bonding film X, first, an adhesive composition for forming the die-bonding film 20 is prepared, and then the composition is applied to a predetermined separator to form an adhesive composition layer. Examples of the separator include a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a plastic film surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent, and paper. Examples of the method for applying the adhesive composition include roll coating, screen coating, and gravure coating. Next, the adhesive composition layer is heated and dried as necessary, and is subjected to a crosslinking reaction as necessary. The heating temperature is, for example, 70 to 160 ℃, and the heating time is, for example, 1 to 5 minutes. The die bond film 20 can be produced in the form of a separator in the above manner.

In the production of the dicing die-bonding film X, the die-bonding film 20 is, for example, pressure-bonded to the pressure-sensitive adhesive layer 12 side of the dicing tape 10. The bonding temperature is, for example, 30 to 50 ℃, preferably 35 to 45 ℃. The bonding pressure (linear pressure) is, for example, 0.1 to 20kgf/cm, preferably 1 to 10 kgf/cm. When the pressure-sensitive adhesive layer 12 contains the radiation-curable pressure-sensitive adhesive as described above, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays before the bonding, or the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the substrate 11 side after the bonding. Alternatively, such radiation irradiation may not be performed during the production of the dicing die-bonding film X (in this case, the pressure-sensitive adhesive layer 12 may be radiation-cured during the use of the dicing die-bonding film X). When the pressure-sensitive adhesive layer 12 is an ultraviolet-curable pressure-sensitive adhesive layer, the amount of ultraviolet radiation for curing the pressure-sensitive adhesive layer 12 is, for example, 50 to 500mJ/cm²Preferably 100 to 300mJ/cm². The region of the dicing die-bonding film X to be irradiated as a measure for reducing the adhesive strength of the adhesive layer 12 is, for example, a region R excluding the edge portion thereof in the die-bonding film bonding region of the adhesive layer 12 as shown in fig. 2.

The dicing die-bonding film X can be produced as described above. For the dicing die-bonding film X, a spacer (not shown) may be provided on the die-bonding film 20 side so as to cover at least the die-bonding film 20. The separator is an element for protecting the die-bonding film 20 and the adhesive layer 12 from being exposed, and is peeled from the dicing die-bonding film X when the film is used.

In the manufacturing process of the semiconductor device, as described above, in order to obtain the semiconductor chip with the adhesive layer, a spreading step using a dicing die bonding film may be performed. When the expanding process is performed, the dicing die-bonding film and/or the dicing tape thereof is in a state where the ring frame is attached. On the other hand, the surface of the dicing tape 10 on the side of the pressure-sensitive adhesive layer 12 of the dicing die-bonding film X showed a peel adhesion of 0.3N/20mm or more to the SUS plane in the peel test under the conditions of-15 ℃, peel angle of 180 ℃ and peel speed of 300 mm/min (condition 1) as described above. The present inventors have found that such a configuration is suitable for suppressing peeling of the dicing die-bonding film and/or the dicing tape thereof from the ring frame when the expansion process (using the dicing die-bonding film) is performed under a low temperature condition of-15 ℃. For example, the examples and comparative examples are described below. This constitution is suitable in the following respects: in the expanding process performed at a low temperature of-15 ℃, for example, the loop frame adhering portion of the dicing tape 10 of the dicing die-bonding film X is continuously adhered to the loop frame against a tensile force of a degree received in the same process. The same configuration of the dicing die-bonding film X, which is suitable for suppressing the separation of the dicing tape 10 from the ring frame when the expansion process is performed under a low temperature condition of-15 ℃, for example, is suitable for performing the expansion process under a low temperature condition of about-15 ℃ so that the die-bonding film 20 is easily cut. For example, the dicing die-bonding film X is suitable for the expanding step in the process of obtaining a semiconductor chip with an adhesive layer under low temperature conditions, in which the ring frame adhering portion of the dicing tape 10 for dicing the die-bonding film X is continuously adhered to the ring frame in the expanding step under low temperature conditions of-15 ℃, and the expanding step is suitably performed under low temperature conditions of about-15 ℃ so that the die-bonding film 20 is easily cut.

As described above, the dicing die-bonding film X is suitable for performing the expanding process for obtaining the semiconductor chip with the adhesive layer under low temperature conditions.

In the dicing die-bonding film X, the peel force adhesion force exhibited by the pressure-sensitive adhesive layer 12 side surface of the dicing tape 10 in the peel test under the above-described condition 1 is preferably 0.35N/20mm or more, and more preferably 0.4N/20mm or more, as described above, from the viewpoint of suppressing the peeling of the dicing tape 10 from the ring frame when used in the expanding process under low-temperature conditions. The adhesive force is, for example, 10N/20mm or less.

In the dicing tape 10 for dicing the die-bonding film X, in the tensile test performed on a test piece of the dicing tape 10 having a width of 20mm under the conditions of an initial inter-chuck distance of 100mm, -15 ℃ and a tensile speed of 200 mm/min, the tensile stress generated at a strain value of 30% is preferably 50N/20mm or less, more preferably 45N/20mm or less, and still more preferably 40N/20mm or less, as described above. Such a configuration is suitable in terms of suppressing residual stress generated in the ring frame bonded portion of the dicing tape 10 after the expansion of the dicing die-bonding film X when the expansion step is performed at a low temperature of, for example, -15 ℃ using the dicing die-bonding film X, and therefore, is suitable in terms of suppressing the peeling of the dicing tape 10 from the ring frame. In addition, from the viewpoint of applying a tensile stress as a sufficient breaking force to the die bond film 20 by the dicing tape 10 being stretched in the stretching step using the dicing die bond film X to suitably cut the die bond film 20, the tensile stress is preferably 5N/20mm or more.

The storage modulus of the pressure-sensitive adhesive layer 12 of the dicing tape 10 at-15 ℃ in the dicing die-bonding film X is preferably 0.1MPa or more, more preferably 0.15MPa or more, and still more preferably 0.2MPa or more, as described above. Such a constitution is suitable for ensuring the cohesive force for resisting the shearing force when the shearing force acts on the pressure-sensitive adhesive layer 12 of the dicing tape 10 of the dicing die-bonding film X under a low-temperature environment, and therefore is suitable for suppressing the peeling of the dicing tape 10 from the ring frame when the dicing die-bonding film X is used in the expanding process under a low-temperature condition of about-15 ℃.

The storage modulus of the pressure-sensitive adhesive layer 12 of the dicing tape 10 at-15 ℃ in the dicing die-bonding film X is preferably 100MPa or less, more preferably 80MPa or less, and still more preferably 50MPa or less, as described above. Such a configuration is suitable for suppressing the residual stress generated in the ring frame bonded portion of the dicing tape 10 after the expansion of the dicing die-bonding film X when the expansion step is performed at a low temperature of, for example, -15 ℃ using the dicing die-bonding film X, and therefore, is suitable for suppressing the peeling of the dicing tape 10 from the ring frame.

The glass transition temperature (Tg) of the base polymer contained in the adhesive layer 12 of the dicing tape 10 in the dicing die-bonding film X as an adhesive is preferably-40 ℃ or lower as described above. Such a configuration is suitable for achieving a rubbery state, that is, a state in which the polymer and, therefore, the pressure-sensitive adhesive layer 12 have rubber elasticity, under low temperature conditions of about-15 ℃, and is therefore suitable for suppressing the separation of the dicing tape 10 from the ring frame when the dicing die-bonding film X is used to perform, for example, a spreading step under low temperature conditions of-15 ℃.

In the dicing die-bonding film X, the pressure-sensitive adhesive layer 12 of the dicing tape 10 preferably contains an acrylic polymer and an isocyanate-based crosslinking agent. With such a configuration, the adhesive layer 12 can easily control the physical properties such as adhesive force, storage modulus, and cohesive force.

In the dicing die-bonding film X, the content of the isocyanate-based crosslinking agent in the pressure-sensitive adhesive layer 12 of the dicing tape 10 is preferably 0.1 part by mass or more, more preferably 0.15 part by mass or more, and still more preferably 0.2 part by mass or more, based on 100 parts by mass of the acrylic polymer, as described above. Such a configuration is suitable in that the adhesive layer 12 secures the above-described cohesive force under low temperature conditions, and therefore, is suitable in that peeling of the dicing tape 10 from the ring frame is suppressed when the dicing die-bonding film X is used in the expanding process under low temperature conditions of about-15 ℃.

In the dicing die-bonding film X, the content of the isocyanate-based crosslinking agent in the pressure-sensitive adhesive layer 12 of the dicing tape 10 is preferably 2 parts by mass or less, more preferably 1.8 parts by mass or less, and still more preferably 1.5 parts by mass or less, based on 100 parts by mass of the acrylic polymer, as described above. Such a configuration is suitable for suppressing the residual stress generated in the ring frame bonded portion of the dicing tape 10 after the expansion of the dicing die-bonding film X when the expansion step is performed at a low temperature of, for example, -15 ℃ using the dicing die-bonding film X, and therefore, is suitable for suppressing the peeling of the dicing tape 10 from the ring frame.

Fig. 3 to 8 show a semiconductor device manufacturing method using the dicing die-bonding film X as described above.

In the present method for manufacturing a semiconductor device, first, as shown in fig. 3 (a) and 3 (b), a modified region 30a is formed in a semiconductor wafer W. The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor elements (not shown) are already mounted on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are already formed on the 1 st surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the 1 st surface Wa side of the semiconductor wafer W, the semiconductor wafer W is irradiated with laser light whose focal point is aligned with the inside of the wafer from the side opposite to the wafer processing tape T1 along the pre-dividing line thereof in a state where the semiconductor wafer W is held on the wafer processing tape T1, and the modified region 30a is formed in the semiconductor wafer W by ablation due to multiphoton absorption. The modified region 30a is a weakened region for separating the semiconductor wafer W into semiconductor chip units. The method of forming the modified regions 30a on the preliminary dividing lines in the semiconductor wafer by laser irradiation is described in detail in, for example, japanese patent application laid-open No. 2002-192370, and the laser irradiation conditions in the present embodiment can be appropriately adjusted within the following ranges, for example.

< laser irradiation conditions >

(A) Laser

(B) Lens for condensing light

Multiplying power of 100 times or less

NA 0.55

Transmittance to laser wavelength of 100% or less

(C) The moving speed of the mounting table for mounting the semiconductor substrate is below 280 mm/s

Next, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb while being held on the wafer processing tape T1, whereby a semiconductor wafer 30A capable of being singulated into a plurality of semiconductor chips 31 is formed as shown in fig. 3 (c) (wafer thinning step). The grinding process can be performed using a grinding apparatus provided with a grinding wheel.

Next, as shown in fig. 4 (a), the dicing die-bonding film X is bonded to the semiconductor wafer 30A and the ring frame 41. Specifically, the bonding operation of the dicing die-bonding film X is performed such that the die-bonding film 20 of the dicing die-bonding film X is bonded to the semiconductor wafer 30A and the dicing tape 10 and/or the adhesive layer 12 thereof is bonded to the ring frame 41, with respect to the semiconductor wafer 30A held in the wafer processing tape T1 and the ring frame 41 disposed so as to surround the semiconductor wafer. Thereafter, as shown in fig. 4 (b), the wafer processing tape T1 is peeled from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die-bonding film X is a radiation-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the base material 11 side after the bonding of the semiconductor wafer 30A to the die-bonding film 20, instead of the above-described irradiation of radiation in the production process of the dicing die-bonding film X. The irradiation dose is, for example, 50 to 500mJ/cm²Preferably 100 to 300mJ/cm². The region of the dicing die-bonding film X to be irradiated as a measure for reducing the adhesive strength of the adhesive layer 12 is, for example, a region R excluding the edge portion thereof in the bonding region of the die-bonding film 20 in the adhesive layer 12 as shown in fig. 2.

Next, as shown in fig. 5 (a), the dicing die-bonding film X with the semiconductor wafer 30A and the ring frame 41 is fixed to the holder 42 of the expanding apparatus via the ring frame 41.

Next, as shown in fig. 5 b, the 1 st expanding step (cooling expanding step) under relatively low temperature conditions is performed to singulate the semiconductor wafer 30A into a plurality of semiconductor chips 31 and to cut the die-bonding film 20 of the cut die-bonding film X into small die-bonding films 21, thereby obtaining semiconductor chips 31 with adhesive layers. In this step, the hollow cylindrical jacking member 43 provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die-bonding film X in the drawing and is raised, and the dicing tape 10 to which the dicing die-bonding film X of the semiconductor wafer 30A is bonded is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30A. The expansion is performed under the condition that a tensile stress of, for example, 15 to 32MPa is generated in the dicing tape 10. The temperature condition in the cooling expansion step is, for example, 0 ℃ or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The spreading speed (speed of raising the jack-up member 43) in the cooling-spreading step is, for example, 1 to 400 mm/sec. The amount of expansion in the cooling expansion step is, for example, 3 to 16 mm. These conditions relating to the expansion in the cooling expansion step are also the same in the cooling expansion step described later.

By the cooling and spreading step, the die-bonding film 20 obtained by cutting the die-bonding film X is cut into the small die-bonding films 21, and the semiconductor chip 31 with the adhesive layer is obtained. Specifically, in this step, cracks are formed in the weakened modified region 30A of the semiconductor wafer 30A, and singulation into the semiconductor chips 31 occurs. At the same time, in the die bond film 20 that is in close contact with the pressure-sensitive adhesive layer 12 of the expanded dicing tape 10 in this step, deformation is suppressed in each region of the semiconductor wafer 30A in which each semiconductor chip 31 is in close contact, while such a deformation suppressing action is not generated at a position opposite to the crack formation position of the wafer, and in this state, the tensile stress generated in the dicing tape 10 acts. As a result, the die-bonding film 20 is cut at a position facing the crack formation position between the semiconductor chips 31. After this step, as shown in fig. 5 (c), the jack-up member 43 is lowered, and the expanded state of the dicing tape 10 is released.

Next, as shown in fig. 6 (a) and 6 (b), the 2 nd spreading step is performed under relatively high temperature conditions, whereby the distance (separation distance) between the semiconductor chips 31 with the adhesive layer is increased. In this step, the table 44 provided in the spreading device is raised to spread the dicing tape 10 for dicing the die bond film X. The platen 44 applies a negative pressure to the workpiece on the platen face so that the workpiece can be vacuum sucked. The temperature condition in the second expansion step 2 is, for example, 10 ℃ or higher, preferably 15 to 30 ℃. The spreading speed (speed at which the table 44 is raised) in the second spreading step 2 is, for example, 0.1 to 10 mm/sec. The expansion amount in the 2 nd expansion step is, for example, 3 to 16 mm. The separation distance of the semiconductor chips 31 with the adhesive layer in this step is increased to such an extent that the semiconductor chips 31 with the adhesive layer can be appropriately picked up from the dicing tape 10 in a pick-up step described later. After the dicing tape 10 is expanded by the raising of the stage 44, the stage 44 vacuum-sucks the dicing tape 10. Then, while maintaining the suction by the table 44, the table 44 is lowered along with the workpiece as shown in fig. 6 (c). In this embodiment, the periphery of the semiconductor wafer 30A (the portion outside the holding region of the semiconductor chip 31) in the dicing die-bonding film X is heated and shrunk in this state (heat shrinking step). Thereafter, the vacuum suction state by the stage 44 is released. By going through the heat shrinkage process, the die bond film X is cut into the following state: a predetermined degree of tension can be applied to the wafer bonding region which is stretched and temporarily relaxed in the first and second stretching steps, and the separation distance of the semiconductor chips 31 is fixed even after the vacuum suction state is released.

In the method for manufacturing a semiconductor device, after the 1 st expansion step, the dicing die-bonding film X may be heated and contracted around the semiconductor wafer 30A (a portion outside the semiconductor chip 31 holding region) without further expansion of the dicing die-bonding film X. In the dicing die-bonding film X, a predetermined degree of tension is applied to the wafer bonding region stretched and temporarily relaxed in the first stretching step 1 in the thermal shrinkage step, whereby a desired separation distance can be secured between the semiconductor chips 31.

Next, after a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 10 provided with the semiconductor chip 31 with the adhesive layer as necessary by using a cleaning liquid such as water, the semiconductor chip 31 with the adhesive layer is picked up from the dicing tape 10 as shown in fig. 7 (pickup step). For example, the semiconductor chip 31 with the adhesive layer to be picked up is lifted up by the pin member 45 of the pickup mechanism on the lower side of the dicing tape 10 in the drawing, and is then sucked and held by the suction jig 46 after being pushed up through the dicing tape 10. In the picking-up step, the pin member 45 is pushed up at a speed of, for example, 1 to 100 mm/sec and the pin member 45 is pushed up at a height of, for example, 50 to 3000 μm.

Next, as shown in fig. 8 (a), the picked-up semiconductor chip 31 with the adhesive layer is temporarily fixed to a predetermined adherend 51 via the die bond film 21. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board.

Next, as shown in fig. 8 b, an electrode pad (not shown) of the semiconductor chip 31 and a terminal portion (not shown) of the adherend 51 are electrically connected by a bonding wire 52 (wire bonding step). The electrode pad of the semiconductor chip 31, the terminal portion of the adherend 51, and the connecting wire of the bonding wire 52 can be realized by ultrasonic welding with heating, and the connection is performed so as not to thermally cure the die bonding film 21. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The heating temperature of the wire in the wire bonding is, for example, 80 to 250 ℃. In addition, the heating time is several seconds to several minutes.

Next, as shown in fig. 8 c, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wire 52 on the adherend 51 (sealing step). In this step, the die bond film 21 is thermally cured. In this step, the sealing resin 53 is formed by, for example, a transfer molding technique using a mold. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ℃, and the heating time is, for example, 60 seconds to several minutes. When the curing of the sealing resin 53 is not sufficiently performed in this step (sealing step), a post-curing step for completely curing the sealing resin 53 is performed after this step. In the sealing step, even when the die-bonding film 21 is not completely heat-cured, the die-bonding film 21 may be completely heat-cured together with the sealing resin 53 in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ℃, and the heating time is, for example, 0.5 to 8 hours.

The semiconductor device can be manufactured by operating as described above.

In the present method for manufacturing a semiconductor device, instead of the above-described configuration in which the semiconductor wafer 30A is bonded to the dicing die-bonding film X, the semiconductor wafer 30B produced in the following manner may be bonded to the dicing die-bonding film X.

In the production of the semiconductor wafer 30B, first, as shown in fig. 9 a and 9B, the dividing grooves 30B are formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor elements (not shown) are already mounted on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are already formed on the 1 st surface Wa. In this step, after the wafer processing tape T2 having the adhesive surface T2a is bonded to the 2 nd surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held with the wafer processing tape T1 held, and the dividing groove 30b having a predetermined depth is formed on the 1 st surface Wa side of the semiconductor wafer W by using a rotary blade such as a dicing apparatus. The dividing grooves 30b are gaps for separating the semiconductor wafer W into semiconductor chip units (the dividing grooves 30b are schematically indicated by thick lines in the drawing).

Next, as shown in fig. 9 (c), the wafer processing tape T3 having the adhesive surface T3a is bonded to the 1 st surface Wa of the semiconductor wafer W, and the wafer processing tape T2 is peeled from the semiconductor wafer W.

Next, as shown in fig. 9 d, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb while being held on the wafer processing tape T3 (wafer thinning step). Through this wafer thinning step, in the present embodiment, the semiconductor wafer 30B capable of being singulated into a plurality of semiconductor chips 31 is formed. Specifically, the semiconductor wafer 30B has a portion (connection portion) for connecting portions of the wafer to be singulated into the plurality of semiconductor chips 31 on the 2 nd surface Wb side. The thickness of the connecting portion of the semiconductor wafer 30B, i.e., the distance between the 2 nd surface Wb of the semiconductor wafer 30B and the 2 nd surface Wb-side tip of the dividing groove 30B is, for example, 1 to 30 μm. The semiconductor wafer 30B produced as described above may be bonded to the dicing die-bonding film X in place of the semiconductor wafer 30A, and the above-described steps may be performed with reference to fig. 4 to 8.

Fig. 10 (a) and 10 (B) show the first expanding step (cooling expanding step) performed after the semiconductor wafer 30B is bonded to the dicing die-bonding film X. In this step, the hollow cylindrical jacking member 43 provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die-bonding film X in the drawing and ascends, and the dicing tape 10 to which the dicing die-bonding film X of the semiconductor wafer 30B is bonded is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30B. In the cooling and spreading step, the semiconductor wafer 30B is cut at a portion which is thin and is likely to be broken, and is singulated into the semiconductor chips 31. At the same time, in the present step, in the die-bonding film 20 that is in close contact with the pressure-sensitive adhesive layer 12 of the expanded dicing tape 10, the deformation is suppressed in the regions in which the semiconductor chips 31 are in close contact, while such a deformation suppressing action is not generated at the positions facing the dividing grooves between the semiconductor chips 31, and in this state, the tensile stress generated in the dicing tape 10 acts. As a result, the die-bonding film 20 is cut at a position facing the dividing groove between the semiconductor chips 31. The semiconductor chip 31 with the adhesive layer thus obtained is subjected to the mounting step in the semiconductor device manufacturing process after the pickup step described above with reference to fig. 7.

In the present method for manufacturing a semiconductor device, the wafer thinning step shown in fig. 11 may be performed instead of the wafer thinning step described above with reference to fig. 9 (d). After the above-described step with reference to fig. 9 (C), in the wafer thinning step shown in fig. 11, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state where the semiconductor wafer W is held on the wafer processing tape T3, and the semiconductor wafer divided bodies 30C including the plurality of semiconductor chips 31 and held on the wafer processing tape T3 are formed. In this step, a method of grinding the wafer until the dividing groove 30b itself is exposed on the 2 nd surface Wb side (the 1 st method) may be adopted, or the following method may be adopted: and a method (method 2) of grinding the wafer from the 2 nd surface Wb side until the wafer reaches the dividing grooves 30b, and then generating cracks between the dividing grooves 30b and the 2 nd surface Wb by a pressing force of the rotating grindstone against the wafer, thereby forming semiconductor wafer divided bodies 30C. The depth of the dividing groove 30b formed as described above with reference to fig. 9 (a) and 9 (b) from the 1 st surface Wa is determined as appropriate according to the method used. Fig. 11 schematically shows the dividing groove 30b by the 1 st method or the dividing groove 30b by the 2 nd method and the crack connected thereto by a thick line. The semiconductor wafer divided body 30C thus produced may be bonded to the dicing die-bonding film X in place of the semiconductor wafer 30A and the semiconductor wafer 30B, and then the above-described steps with reference to fig. 4 to 8 may be performed.

Fig. 12 (a) and 12 (b) show the first expanding step (cooling expanding step) performed after the semiconductor wafer assembly 30C is bonded to the dicing die-bonding film X. In this step, the hollow cylindrical jacking member 43 provided in the expanding device is brought into contact with the dicing tape 10 and raised on the lower side of the dicing die-bonding film X in the drawing, and expands the dicing tape 10 to which the dicing die-bonding film X of the semiconductor wafer segment 30C is bonded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer segment 30C. In the die-bonding film 20 that adheres to the pressure-sensitive adhesive layer 12 of the spread dicing tape 10, the cooling spreading step suppresses deformation in the regions of the semiconductor wafer divided bodies 30C where the semiconductor chips 31 adhere to each other, and does not generate such a deformation suppressing action at the positions facing the dividing grooves 30b between the semiconductor chips 31, and in this state, the tensile stress generated in the dicing tape 10 acts. As a result, the die-bonding film 20 is cut at a position facing the dividing groove 30b between the semiconductor chips 31. The semiconductor chip 31 with the adhesive layer obtained in this way is subjected to the mounting step in the semiconductor device manufacturing process after the pickup step described above with reference to fig. 7.

[ examples ]

[ example 1]

Manufacture of cutting tapes (DT)

Comprises a condenser tube, a nitrogen inlet tube, a thermometer,And a stirring device, and a mixture containing 100 parts by mole of 2-ethylhexyl acrylate (2EHA), 21 parts by mole of 2-hydroxyethyl acrylate (HEA), benzoyl peroxide as a polymerization initiator, and toluene as a polymerization solvent was stirred at 60 ℃ for 10 hours under a nitrogen atmosphere (polymerization reaction). In this mixture, the content of benzoyl peroxide was 0.4 parts by mass per 100 parts by mass of the monomer component (2EHA, HEA), and the content of toluene was 80 parts by mass per 100 parts by mass of the monomer component. The polymerization reaction gives an acrylic polymer P₁The polymer solution of (1). Para acrylic polymer P₁The glass transition temperature (Tg) determined on the basis of the formula FoX was-60.6 ℃. Then, the acrylic polymer P is added₁To the solution of (2) was added 18 parts by mole of 2-methacryloyloxyethyl isocyanate (MOI), and then the mixture was stirred at 50 ℃ for 60 hours under an air atmosphere (addition reaction). Thus, an acrylic polymer P having a methacryloyl group in the side chain was obtained₂The polymer solution of (1). Subsequently, the acrylic polymer P was added to the polymer solution₂100 parts by mass of a crosslinking agent (trade name "CORONATE L", polyisocyanate compound, manufactured by tokyo co., ltd.) and 2 parts by mass of a photopolymerization initiator (trade name "Irgacure 127", manufactured by BASF) were mixed to obtain an adhesive composition. Next, an adhesive composition was applied to the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form an adhesive composition layer. Subsequently, the composition layer was dried by heating at 120 ℃ for 2 minutes to form an adhesive layer having a thickness of 10 μm on the PET separator. Subsequently, using a laminator, a substrate S made of an ethylene-vinyl acetate copolymer (EVA) was laminated at room temperature₁(trade name "RB 0103", thickness 125 μm, manufactured by Bin-Pao textile Co., Ltd.) was adhered to the exposed surface of the pressure-sensitive adhesive layer. In the same manner as above, a dicing tape of example 1 including a substrate and an adhesive layer was produced. The compositions of the dicing tape pressure-sensitive adhesive layers in example 1 and in each of examples and comparative examples described later are shown in table 1 (in table 1, the monomers are described for the constituent monomers of the acrylic polymerThe molar ratio between (a) and (b) is described as a mass ratio of the crosslinking agent and the photopolymerization initiator to 100 parts by mass of the acrylic polymer).

Production of chip bonding film

100 parts by mass of an acrylic resin (trade name "TEISAN RESIN SG-708-6", weight average molecular weight 70 ten thousand, glass transition temperature Tg 4 ℃ C., manufactured by Nagase ChemteX Corporation), 11 parts by mass of an epoxy resin (trade name "JER 828", manufactured by Mitsubishi chemical Corporation), 5 parts by mass of a phenol resin (trade name "MEH-7851 SS", manufactured by Minghe Kabushiki Kaisha), and 110 parts by mass of an inorganic filler (trade name "SO-25R", spherical silica, average particle diameter 500nm, manufactured by Admatech Corporation) were added to methyl ethyl ketone and mixed to obtain an adhesive composition having a solid content concentration of 20% by mass. Next, an adhesive composition was applied to the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form an adhesive composition layer. Subsequently, the composition layer was dried by heating at 130 ℃ for 2 minutes, and a die bond film of example 1 having a thickness of 10 μm was formed on the PET spacer.

Manufacture of cutting chip bonding film

The die bond film of example 1 with the PET separator was punched out into a disc shape having a predetermined diameter. Next, after the PET separator was peeled from the die bond film and the PET separator was peeled from the dicing tape, the adhesive layer exposed in the dicing tape was bonded to the surface of the die bond film exposed by peeling the PET separator using a roll laminator. In this bonding, the bonding speed was set to 10 mm/min, the temperature condition was set to 23 ℃ and the pressure condition was set to 0.15 MPa. Next, the dicing tape bonded to the die bond film in this manner is punched out into a circular disk shape having a predetermined diameter so that the center of the dicing tape coincides with the center of the die bond film. Next, the adhesive layer in the dicing tape was irradiated with ultraviolet light from the EVA base material side. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the cumulative quantity of light irradiated was set to 300mJ/cm². Operating as described above, the manufacturing method includes the steps of cutting the tape and bonding the chipDicing die-bonding film of example 1 of laminated structure of films.

[ example 2 ]

Production of cutting belt

In a reaction vessel equipped with a condenser tube, a nitrogen inlet tube, a thermometer, and a stirring device, a mixture containing 75 parts by mole of 2-ethylhexyl acrylate (2EHA), 25 parts by mole of 4-Acryloylmorpholine (ACMO), 22 parts by mole of 2-hydroxyethyl acrylate (HEA), benzoyl peroxide as a polymerization initiator, and toluene as a polymerization solvent was stirred at 60 ℃ for 10 hours in a nitrogen atmosphere (polymerization reaction). In this mixture, the content of benzoyl peroxide was 0.4 parts by mass with respect to 100 parts by mass of the monomer component (2EHA, ACMO, HEA), and the content of toluene was 80 parts by mass with respect to 100 parts by mass of the monomer component. The polymerization reaction gives an acrylic polymer P₃The polymer solution of (1). Para acrylic polymer P₃The glass transition temperature (Tg) determined on the basis of the formula FoX was-42.7 ℃. Then, the acrylic polymer P is added₃To the solution of (2) was added 18 parts by mole of 2-methacryloyloxyethyl isocyanate (MOI), and then the mixture was stirred at 50 ℃ for 60 hours under an air atmosphere (addition reaction). Thus, an acrylic polymer P having a methacryloyl group in the side chain was obtained₄The polymer solution of (1). Subsequently, the acrylic polymer P was added to the polymer solution₄100 parts by mass of a crosslinking agent (trade name "CORONATE L", polyisocyanate compound, manufactured by tokyo co., ltd.) and 2 parts by mass of a photopolymerization initiator (trade name "Irgacure 127", manufactured by BASF) were mixed to obtain an adhesive composition. Next, an adhesive composition was applied to the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form an adhesive composition layer. Subsequently, the composition layer was dried by heating at 120 ℃ for 2 minutes to form an adhesive layer having a thickness of 10 μm on the PET separator. Subsequently, using a laminator, a substrate S made of an ethylene-vinyl acetate copolymer (EVA) was laminated at room temperature₁(trade name "RB 0103", thickness 125 μm, spread in a house type of textile plant)Manufactured by corporation) was attached to the exposed surface of the adhesive layer. In the same manner as above, a dicing tape of example 2 was produced.

Production of chip bonding film

100 parts by mass of an acrylic resin (trade name "TEISAN RESIN SG-708-6", weight average molecular weight 70 ten thousand, glass transition temperature Tg 4 ℃ C., manufactured by Nagase ChemteX Corporation), 11 parts by mass of an epoxy resin (trade name "JER 828", manufactured by Mitsubishi chemical Corporation), 5 parts by mass of a phenol resin (trade name "MEH-7851 SS", manufactured by Minghe Kabushiki Kaisha), and 110 parts by mass of an inorganic filler (trade name "SO-25R", spherical silica, average particle diameter 500nm, manufactured by Admatech Corporation) were added to methyl ethyl ketone and mixed to obtain an adhesive composition having a solid content concentration of 20% by mass. Next, an adhesive composition was applied to the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form an adhesive composition layer. Subsequently, the composition layer was dried by heating at 130 ℃ for 2 minutes, and a die bond film of example 2 having a thickness of 10 μm was formed on the PET spacer.

Manufacture of cutting chip bonding film

The die bond film of example 2 with the PET separator was punched out into a disc shape having a predetermined diameter. Next, after the PET separator was peeled from the die bond film and the PET separator was peeled from the dicing tape, the adhesive layer exposed in the dicing tape was bonded to the surface of the die bond film exposed by peeling the PET separator using a roll laminator. In this bonding, the bonding speed was set to 10 mm/min, the temperature condition was set to 23 ℃ and the pressure condition was set to 0.15 MPa. Next, the dicing tape bonded to the die bond film in this manner is punched out into a circular disk shape having a predetermined diameter so that the center of the dicing tape coincides with the center of the die bond film. Next, the adhesive layer in the dicing tape was irradiated with ultraviolet light from the EVA base material side. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the cumulative quantity of light irradiated was set to 300mJ/cm². By operating as above, a laminate having a dicing tape and a die-bonding film was producedThe dicing die-bonding film of example 2 of the structure.

[ example 3 ]

HEA used for forming the dicing tape adhesive layer was set to 20 parts by mole instead of 21 parts by mole and instead of the base material S₁And using a substrate S made of EVA₂A dicing tape of example 3 was produced in the same manner as the dicing tape of example 1 except that (trade name "RB 0104", thickness 125 μm, manufactured by Fuji textile Co., Ltd.) was used. A dicing die-bonding film of example 3 was produced in the same manner as the dicing die-bonding film of example 1, except that the dicing tape was used instead of the dicing tape of example 1.

[ example 4 ]

Replacing the substrate S₁Base material S made of EVA₂A dicing tape of example 4 was produced in the same manner as the dicing tape of example 2 except that (trade name "RB 0104", thickness 125 μm, manufactured by Fuji textile Co., Ltd.) was used. A dicing die-bonding film of example 4 was produced in the same manner as the dicing die-bonding film of example 2, except that the dicing tape was used instead of the dicing tape of example 2.

[ example 5 ]

HEA used for forming the dicing tape adhesive layer was set to 20 parts by mole instead of 21 parts by mole and instead of the base material S₁And a polyolefin base material S₃A dicing tape of example 5 was produced in the same manner as the dicing tape of example 1 except that (product name "DDZfilm", thickness 90 μm, manufactured by GUNZE LIMITED Co., Ltd.). Base material S₃Having a laminated structure of "polyethylene layer/polypropylene layer/polyethylene layer". A dicing die-bonding film of example 5 was produced in the same manner as the dicing die-bonding film of example 1, except that the dicing tape was used instead of the dicing tape of example 1.

[ example 6 ]

Replacing the substrate S₁Using a polyolefin base material S₃(product name: DDZ film, thickness 90 μm, manufactured by GUNZELIMITED), the same procedure as in the dicing tape of example 2 was repeated,a dicing tape of example 6 was produced. A dicing die-bonding film of example 6 was produced in the same manner as the dicing die-bonding film of example 2, except that the dicing tape was used instead of the dicing tape of example 2.

[ example 7 ]

The crosslinking agent (trade name "CORONATE L", polyisocyanate compound, manufactured by tokyo corporation) used for forming the dicing tape adhesive layer was set to 2 parts by mass instead of 0.75 part by mass and instead of the substrate S₁And a substrate S made of polyvinyl chloride is used₄A dicing tape of example 7 was produced in the same manner as the dicing tape of example 2 except that (trade name "V9K", thickness 100 μm, Achilles CORPORATION). A dicing die-bonding film of example 7 was produced in the same manner as the dicing die-bonding film of example 2, except that the dicing tape was used instead of the dicing tape of example 2.

[ comparative example 1]

The crosslinking agent (trade name "CORONATE L", manufactured by Tosoh corporation) used for forming the dicing tape adhesive layer was set to 4 parts by mass instead of 0.75 part by mass and instead of the substrate S₁And a polyolefin base material S₃A dicing tape of comparative example 1 was produced in the same manner as the dicing tape of example 2 except that (trade name "DDZ", thickness 90 μm, GUNZE LIMITED) was used. A dicing die-bonding film of comparative example 1 was produced in the same manner as the dicing die-bonding film of example 2, except that the dicing tape was used instead of the dicing tape of example 2.

[ adhesion to SUS ]

The adhesive force to the SUS plane was examined for the adhesive layer side surface of the dicing tape in each of the dicing die-bonding films of examples 1 to 7 and comparative example 1 in the following manner. First, a test piece (width 20 mm. times. length 140mm) of a dicing tape was cut out from the dicing tape. Next, the cut tape test piece was attached to a SUS plate (made of SUS 403) via the adhesive layer side thereof. The bonding was performed by a pressure bonding operation in which a 2kg hand roller was reciprocated 1 time. After the lamination, the laminated body was left to stand for 30 minutes. Then, a peel test of peeling a sample piece of the dicing tape from the SUS plate was performed using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu corporation) under conditions of-15 ℃, a peel angle of 180 DEG, and a peel speed of 300 mm/min, and the peel adhesion (N/20mm) of the dicing tape to the SUS plane was measured. The results are shown in table 1.

Storage modulus

The storage modulus (shear storage modulus) of the adhesive layer of the dicing tape in each of the dicing die-bonding films of examples 1 to 7 and comparative example 1 was investigated by dynamic viscoelasticity measurement. The samples for measurement were prepared as follows. First, a plurality of adhesive sheets were laminated to prepare an adhesive sheet having a thickness of about 2 mm. Then, the sheet was punched out to obtain cylindrical pellets (diameter: 7.9mm) as a sample for measurement. Then, the measurement sample was fixed to a jig of a parallel plate having a diameter of 7.9mm using a dynamic viscoelasticity measuring apparatus (trade name "ARES", manufactured by Rheometrics, inc.). In this measurement, the measurement mode was set to the shear mode, the measurement temperature range was set to-70 ℃ to 150 ℃, the temperature rise rate was set to 5 ℃/min, and the frequency was set to 1 Hz. The storage modulus at-15 ℃ determined by the measurement for the pressure-sensitive adhesive layer is shown in table 1.

[ tensile stress ]

Tensile stress was investigated by performing a tensile test on the dicing tape in each of the dicing die-bonding films of examples 1 to 7 and comparative example 1. Specifically, first, a dicing tape test piece (width 20 mm. times. length 140mm) was cut out from the dicing tape. 5 test pieces of dicing tape were prepared for each of examples and comparative examples. Then, a tensile test was performed using a tensile tester (trade name "Autograph 50 NX", manufactured by shimadzu corporation), and the tensile stress generated at a strain value of 30% was measured. In the tensile test, the initial distance between chucks was 100mm, the temperature condition was-15 ℃ and the tensile speed was 200 mm/min. The average value of the measurement values of 5 dicing tape test pieces derived from the same dicing die-bonding film was defined as the tensile stress (N/20mm) at-15 ℃ of the dicing tape. The results are shown in table 1.

Evaluation of extended Process

The dicing die-bonding films of examples 1 to 7 and comparative example 1 were used to perform the following bonding step and the subsequent spreading step.

In the bonding step, a dicing die-bonding film was bonded to the semiconductor wafer divided body held in a wafer processing tape (trade name "ELPUB-3083D", manufactured by ritonan electric corporation) and a ring frame (diameter 12 inches, manufactured by SUS, manufactured by DISCO inc.) surrounding the semiconductor wafer divided body in such a manner that the dicing die-bonding film was bonded to the semiconductor wafer divided body and the dicing tape adhesive layer was bonded to the ring frame. Thereafter, the wafer processing tape is peeled off from the semiconductor wafer separator and the ring frame. The semiconductor wafer division body is prepared by forming as follows. First, a silicon bare wafer (300 mm in diameter, 780 μm in thickness, manufactured by tokyo chemical corporation) held together with a ring frame on a wafer processing tape (trade name "V12S-R2", manufactured by hitto electric corporation) was provided with a dicing device (trade name "DFD 6361", manufactured by DISCO inc.) from one surface side thereof with a rotary blade to form dividing grooves (20 to 25 μm in width, 50 μm in depth, and 6mm × 12mm in each division) for singulation. Next, a wafer processing tape (trade name "ELPUB-3083D", manufactured by ritonas electric corporation) was attached to the dividing groove forming surface of the wafer and the ring frame, and then the wafer processing tape (trade name "V12S-R2") was peeled off from the wafer and the ring frame. Thereafter, the wafer was thinned to a thickness of 20 μm by grinding from the other surface (surface on which the dividing grooves were not formed) side of the wafer using a back grinding apparatus (trade name "DGP 8760", manufactured by DISCO inc.). By the above operation, semiconductor wafer segments (held in the wafer processing tape) are formed. The semiconductor wafer division body includes a plurality of semiconductor chips (6mm × 12 mm).

The expansion step was performed by using a mold Separator (trade name "Die Separator DDS 2300", manufactured by DISCO inc.) and a cooling expansion unit thereof. Specifically, first, the dicing die-bonding film with the semiconductor wafer segments and the ring frame surrounding the semiconductor wafer segments is set in an apparatus, and the dicing tape with the dicing die-bonding film with the semiconductor wafer segments is expanded by the cooling expansion means of the apparatus. In the cooling expansion step, the temperature was-15 ℃, the expansion rate was 100 mm/sec, and the expansion amount was 7 mm. The dicing tape used for dicing the die bond film was evaluated as "good" when no peeling from the ring frame occurred through the spreading step, and as "bad" when such peeling occurred. The results are shown in table 1.

[ Table 1]

Claims

1. A dicing die-bonding film comprising:

dicing tape having a laminated structure comprising a substrate and an adhesive layer, and

a die-bonding film releasably adhered to the adhesive layer in the dicing tape,

the surface of the dicing tape on the pressure-sensitive adhesive layer side exhibits a peel adhesion of 0.3N/20mm or more in a peel test under conditions of-15 ℃ to the SUS plane, a peel angle of 180 DEG, and a peel speed of 300 mm/min.

2. The dicing die-bonding film according to claim 1, wherein the dicing tape generates a tensile stress of 50N/20mm or less at a strain value of 30% in a tensile test performed on a dicing tape test piece having a width of 20mm under conditions of an initial inter-chuck distance of 100mm, -15 ℃ and a tensile speed of 200 mm/min.

3. The dicing die-bonding film according to claim 1 or 2, wherein the adhesive layer has a storage modulus at-15 ℃ of 0.1MPa or more.

4. The dicing die-bonding film according to claim 1 or 2, wherein the adhesive layer has a storage modulus at-15 ℃ of 100MPa or less.

5. The dicing die-bonding film according to claim 1 or 2, wherein the adhesive layer contains a polymer having a glass transition temperature of-40 ℃ or lower.

6. The dicing die-bonding film according to claim 1 or 2, wherein the adhesive layer contains an acrylic polymer and an isocyanate-based crosslinking agent.

7. The dicing die-bonding film according to claim 6, wherein the content of the isocyanate-based crosslinking agent in the adhesive layer is 0.1 parts by mass or more with respect to 100 parts by mass of the acrylic polymer.

8. The dicing die-bonding film according to claim 6, wherein the content of the isocyanate-based crosslinking agent in the adhesive layer is 2 parts by mass or less with respect to 100 parts by mass of the acrylic polymer.