JP7105120B2 - Dicing tape, dicing die-bonding film, and semiconductor device manufacturing method - Google Patents

Description

The present invention relates to a dicing tape and a dicing die-bonding film that can be used in the process of manufacturing semiconductor devices, and a method of manufacturing semiconductor devices.

In the process of manufacturing semiconductor devices, a dicing die-bonding film is sometimes used to obtain a semiconductor chip with an adhesive film of a size corresponding to a chip for die-bonding, that is, a semiconductor chip with a die-bonding film. The dicing die-bonding film has a size corresponding to the semiconductor wafer to be processed. have.

As one method of obtaining a semiconductor chip with a die-bonding film using a dicing die-bonding film, a method is known in which a dicing tape in the dicing die-bonding film is expanded to break the die-bonding film. In this technique, first, a semiconductor wafer is bonded onto a die bond film of a dicing die bond film. This semiconductor wafer is, for example, processed so that it can be cut together with the die-bonding film later and separated into a plurality of semiconductor chips. The dicing tape of the dicing die-bonding film is then expanded to break the die-bonding film so that a plurality of adhesive film pieces each adhering to the semiconductor chip arise from the die-bonding film on the dicing tape. In this expanding step, the semiconductor wafer on the die-bonding film is also cleaved at locations corresponding to the cleaved locations on the die-bonding film, and the semiconductor wafer is singulated into a plurality of semiconductor chips on the dicing die-bonding film or dicing tape. Next, for example, after passing through a cleaning process, each semiconductor chip is picked up from the dicing tape together with a die-bonding film having a size corresponding to the chip, which is adhered thereto. Thus, a semiconductor chip with a die-bonding film is obtained. This semiconductor chip with a die-bonding film is fixed to an adherend such as a mounting substrate by die-bonding through the die-bonding film. Techniques for obtaining a die-bonding film-attached semiconductor chip using a dicing die-bonding film are described, for example, in Patent Documents 1 to 3 below.

JP 2014-158046 A JP 2016-115775 A JP 2016-115804 A

In the above-mentioned expanding step, the die bond film in the dicing die bond film, which is in close contact with the dicing tape, is subjected to a cutting force from the expanded dicing tape. There is Conventionally, in a semiconductor chip with a die-bonding film on a dicing tape that has undergone an expanding process, when the end of the die-bonding film is partially peeled off from the dicing tape (that is, the end of the semiconductor chip with a die-bonding film from the dicing tape float), or the semiconductor chip or its die-bonding film may be wholly peeled off from the dicing tape. Partial peeling, ie, floating, may cause unintended peeling of the semiconductor chip with the die-bonding film from the dicing tape in a cleaning process after the expanding process. Occurrence of partial peeling or floating can also cause pick-up failure in the pick-up process. As the wiring structure formed in advance on the surface of a semiconductor wafer or on the surface of a semiconductor chip becomes multi-layered, the difference in coefficient of thermal expansion between the resin material in the wiring structure and the semiconductor material of the semiconductor chip body becomes one of the factors, causing the above floating. Delamination is likely to occur.

The present invention has been devised under the circumstances as described above. An object of the present invention is to provide a dicing tape, a dicing die-bonding film, and a method for manufacturing a semiconductor device suitable for suppressing lifting and peeling from the dicing tape.

A first aspect of the present invention provides a dicing tape. This dicing tape has a laminated structure including a base material and an adhesive layer, and in a tensile test performed on a dicing tape test piece with a width of 20 mm at an initial chuck-to-chuck distance of 100 mm, at least a part of the range of 5 to 30% can exhibit tensile stresses in the range of 15-32 MPa at strain values of . At least some of the distortion values in the range of 5-30% include one distortion value in the range of 5-30%. A dicing tape having such a structure can be used to obtain a semiconductor chip with a die-bonding film in the manufacturing process of a semiconductor device in a form in which a die-bonding film is adhered to the pressure-sensitive adhesive layer side.

In the manufacturing process of a semiconductor device, as described above, an expanding step using a dicing die-bonding film may be carried out in order to obtain a semiconductor chip with a die-bonding film. In the expanding step, the tensile stress generated in the dicing tape expanded by the dicing die-bonding film is 15 MPa or more and 32 MPa or less. while avoiding excessive residual stress acting on the die-bonding film after cutting from the dicing tape after expansion, the film or the semiconductor with the film The inventors have found that it is suitable for suppressing the chip from floating or peeling off from the dicing tape. For example, it is as shown in Examples and Comparative Examples below. The dicing tape according to the first aspect of the present invention has a strain value of 5% or more, which is suitable for ensuring a sufficient tensile length for causing cleaving in the die bond film, and a tensile strength in the expanding step. 15 to 32 MPa, as described above, at least a portion of the strain value in the range of 30% or less, which is suitable for efficient implementation of the expanding process while avoiding excessive length. It can exhibit tensile stress. Such a dicing tape, in a form in which a die-bonding film is adhered to the pressure-sensitive adhesive layer side, is suitable for use in an expanding step for expanding under conditions that generate a tensile stress within the range of 15 to 32 MPa, and therefore, It is suitable for cleaving the die-bonding film on the dicing tape in the expanding process and for suppressing lifting and peeling from the dicing tape.

The dicing tape according to the first aspect of the present invention has a strain value of 5% or more as described above, which can exhibit a tensile stress in the range of 15 to 32 MPa in the tensile test. In order to ensure a sufficient tensile length when used in the expanding process in a form in which the die bond film is adhered to the agent layer side, a strain value that can exhibit a tensile stress within the range of 15 to 32 MPa in the above tensile test is preferably 6% or more, more preferably 7% or more, and more preferably 8% or more. Further, the dicing tape according to the first aspect of the present invention has a strain value of 30% or less as described above, which can exhibit a tensile stress within the range of 15 to 32 MPa in the tensile test. In order to avoid the necessary tensile length from becoming excessive when the die-bonding film is adhered to the pressure-sensitive adhesive layer side and used in the expanding process, the above-mentioned tensile test should be carried out in the range of 15 to 32 MPa. The strain value that can indicate tensile stress is preferably 20% or less, more preferably 17% or less, more preferably 15% or less, more preferably 13% or less.

The tensile stress that the dicing tape according to the first aspect of the present invention can exhibit in the above tensile test is preferably 20 to 32 MPa. Such a dicing tape, in the form in which the die-bonding film is adhered to the pressure-sensitive adhesive layer side, is suitable for use in an expanding process for expanding under conditions in which a tensile stress within the range of 20 to 32 MPa is generated. In the expanding step, the greater the tensile stress generated in the dicing tape expanded by the dicing die-bonding film exceeds 15 MPa, the greater the tensile stress acting as a breaking force from the dicing tape during expansion to the die-bonding film. .

In the tensile test, the lower the temperature condition, the greater the tensile stress exhibited by the dicing tape or its test piece. According to such a configuration, a relatively large tensile stress generated in the dicing tape to be expanded under a temperature condition of -15 ° C. is used as a breaking force against the die bond film in the expanding step for breaking, and the die bond after breaking is used. It is possible to perform the second expansion step for extending the distance between the semiconductor chips with the film under relatively high temperature (for example, room temperature) conditions while suppressing the tensile stress generated by the dicing tape.

In the dicing tape according to the first aspect of the present invention, the tensile speed condition in the tensile test is preferably 10 to 1000 mm/min, more preferably 100 to 1000 mm/min. When the present dicing tape is used in the expanding step with the die bond film adhered to the adhesive layer side, from the viewpoint of the process speed and thus the productivity of the semiconductor device, the dicing tape has a predetermined strain value of 15 to 32 MPa. is preferably 10 mm/min or more, more preferably 100 mm/min or more. From the viewpoint of avoiding breakage when the present dicing tape is used in the expanding process with a die bond film adhered to the adhesive layer side, the dicing tape has a predetermined strain value within the range of 15 to 32 MPa. The tensile speed condition of the tensile test that produces a tensile stress of 1000 mm/min or less is preferably 300 mm/min or less.

According to a second aspect of the invention, a dicing die bond film is provided. This dicing die-bonding film includes the dicing tape described above according to the first aspect of the present invention, and the die-bonding film on the pressure-sensitive adhesive layer of this dicing tape. Such a dicing die-bonding film provided with the dicing tape according to the first aspect of the present invention is used in an expanding step for expanding the dicing tape under conditions in which a tensile stress within the range of 15 to 32 MPa is generated in the dicing tape. Therefore, the die-bonding film on the dicing tape is cleaved well in the expanding process, and it is suitable for suppressing lifting and peeling from the dicing tape.

A third aspect of the present invention provides a semiconductor device manufacturing method. This semiconductor device manufacturing method includes the following first and second steps. In the first step, a semiconductor wafer that can be separated into a plurality of semiconductor chips or a semiconductor wafer divided body including a plurality of semiconductor chips is attached to a dicing die bond film. The dicing die-bonding film used in the first step includes a dicing tape having a laminate structure including a substrate and an adhesive layer, and a die-bonding film on the adhesive layer of the dicing tape. In this step, a semiconductor wafer segment or a semiconductor wafer is attached to the die-bonding film side of such a dicing die-bonding film. In the second step, the dicing tape is expanded under conditions in which a tensile stress within the range of 15 to 32 MPa is generated in the dicing tape, thereby breaking the die-bonding film and obtaining a die-bonding film-attached semiconductor chip. The dicing tape is expanded, for example, in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer division body or semiconductor wafer to be bonded to the dicing die-bonding film.

In the expanding step using a dicing die-bonding film to obtain a semiconductor chip with a die-bonding film, the tensile stress generated in the dicing tape expanded by the dicing die-bonding film is 15 MPa or more and 32 MPa or less. Residual stress acting on the die-bonding film after cleaving from the dicing tape after expansion is suitable for cleaving the die-bonding film by applying a tensile stress as a sufficient cleaving force to the die-bonding film from the dicing tape. The inventors have found that it is suitable for preventing the film or the film-attached semiconductor chip from floating or peeling off from the dicing tape by avoiding an excessive increase in . For example, it is as shown in Examples and Comparative Examples below. Then, in the second step of the semiconductor device manufacturing method according to the third aspect of the present invention, the tensile stress within the range of 15 to 32 MPa in the dicing tape of the dicing die bond film accompanying the semiconductor wafer division body or the semiconductor wafer on the die bond film side The dicing tape is expanded under the condition that This semiconductor device manufacturing method including the second step, that is, the expanding step, is suitable for excellently breaking the die-bonding film on the dicing tape and suppressing lifting and peeling from the dicing tape.

In the second step of the semiconductor device manufacturing method, the lower the temperature condition, the greater the tensile stress exhibited by the dicing tape. It is preferably -20 to -5°C, more preferably -15 to -5°C, more preferably -15°C. According to such a configuration, a relatively large tensile stress generated under relatively low temperature conditions in the dicing tape expanded in the second step is used as a breaking force against the die bond film in the expanding step for breaking, It is possible to perform the second expansion process for extending the distance between the semiconductor chips with the die-bonding film after cutting under relatively high temperature (for example, room temperature) conditions while suppressing the tensile stress generated by the dicing tape.

1 is a schematic cross-sectional view of a dicing die-bonding film according to one embodiment of the present invention; FIG. 4 shows some steps in a semiconductor device manufacturing method according to an embodiment of the present invention; 4 shows some steps in a semiconductor device manufacturing method according to an embodiment of the present invention; 4 shows some steps in a semiconductor device manufacturing method according to an embodiment of the present invention; 4 shows some steps in a semiconductor device manufacturing method according to an embodiment of the present invention; 4 shows some steps in a semiconductor device manufacturing method according to an embodiment of the present invention; 4 shows some steps in a semiconductor device manufacturing method according to an embodiment of the present invention; 4 shows some steps in a modification of the semiconductor device manufacturing method according to one embodiment of the present invention. 5 shows some steps in a modification of the semiconductor device manufacturing method according to one embodiment of the present invention. 4 shows some steps in a modification of the semiconductor device manufacturing method according to one embodiment of the present invention. 4 shows some steps in a modification of the semiconductor device manufacturing method according to one embodiment of the present invention. 1 shows stress-strain curves obtained for dicing tapes of Examples 1 and 2 and Comparative Examples 1 and 2. FIG.

FIG. 1 is a schematic cross-sectional view of a dicing die-bonding film X according to one embodiment of the present invention. The dicing die-bonding film X has a laminated structure including the dicing tape 10 according to one embodiment of the present invention and the die-bonding film 20, and is used in the expanding step in the process of obtaining a semiconductor chip with a die-bonding film in the manufacture of semiconductor devices. It is something that can be done. Also, the dicing die-bonding film X has, for example, a disk shape of a size corresponding to a semiconductor wafer to be processed in the manufacturing process of a semiconductor device.

The dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12, and in a tensile test performed on a dicing tape test piece with a width of 20 mm at an initial chuck-to-chuck distance of 100 mm, at least in the range of 5 to 30% It can exhibit tensile stresses in the range of 15-32 MPa at some strain values. At least some of the distortion values in the range of 5-30% include one distortion value in the range of 5-30%.

The base material 11 of the dicing tape 10 is an element that functions as a support in the dicing tape 10 or the dicing die-bonding film X. As shown in FIG. For the substrate 11, for example, a plastic substrate (especially a plastic film) can be suitably used. Materials constituting the plastic substrate include, for example, polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfide, Aramid, fluororesin, cellulosic resin, and silicone resin can be mentioned. Polyolefins include, for example, low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, polymethylpentene, Ethylene-vinyl acetate copolymer, ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer. be done. Polyesters include, for example, polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The base material 11 may consist of one kind of material, or may consist of two or more kinds of materials. The base material 11 may have a single layer structure or may have a multilayer structure. When the pressure-sensitive adhesive layer 12 on the base material 11 is an ultraviolet curing type as described later, the base material 11 preferably has ultraviolet transmittance. Further, when the substrate 11 is made of a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film.

When the dicing tape 10 or the base material 11 is to be shrunk by, for example, partial heating when using the dicing die-bonding film X, the base material 11 preferably has heat shrinkability. Further, when the base material 11 is made of a plastic film, the base material 11 is preferably a biaxially stretched film in order to achieve isotropic heat shrinkability of the dicing tape 10 or the base material 11 . The dicing tape 10 or substrate 11 has a heat shrinkage rate of preferably 2 to 30%, more preferably 2 to 25%, more preferably 2 to 25% in a heat treatment test performed at a heating temperature of 100 ° C. and a heat treatment time of 60 seconds. 3 to 20%, more preferably 5 to 20%. The thermal contraction rate refers to at least one of the so-called MD direction thermal contraction rate and the so-called TD direction thermal contraction rate.

The surface of the base material 11 on the side of the adhesive layer 12 may be subjected to a treatment for enhancing adhesion with the adhesive layer 12 . Such treatments include, for example, physical treatments such as corona discharge treatment, plasma treatment, sand matting treatment, ozone exposure treatment, flame exposure treatment, high voltage shock exposure treatment, and ionizing radiation treatment; treatment, and undercoating treatment.

The thickness of the base material 11 is preferably 40 μm or more, more preferably 50 μm or more, and more preferably 50 μm or more, from the viewpoint of securing strength for the base material 11 to function as a support in the dicing tape 10 or the dicing die-bonding film X. is 55 μm or more, more preferably 60 μm or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape 10 or the dicing die-bonding film X, the thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less, and more preferably 150 μm or less. .

The adhesive layer 12 of the dicing tape 10 contains an adhesive. The adhesive may be an adhesive whose adhesive strength can be intentionally reduced by an external action such as irradiation or heating (adhesive strength-reducing adhesive). It may be an adhesive that hardly or never reduces the force (non-adhesive strength reducing type adhesive), depending on the method and conditions of singulating the semiconductor chips singulated using the dicing die-bonding film X. can be selected as appropriate.

When an adhesive force-reducing adhesive is used as the adhesive in the adhesive layer 12, the adhesive layer 12 exhibits a relatively high adhesive force and a relatively low adhesive force during the manufacturing process and use process of the dicing die-bonding film X. It becomes possible to use properly the state which shows adhesive force. For example, when the die-bonding film 20 is attached to the adhesive layer 12 of the dicing tape 10 in the manufacturing process of the dicing die-bonding film X, or when the dicing die-bonding film X is used in a predetermined wafer dicing process, the adhesive layer 12 is placed relative to the die-bonding film X. While it is possible to suppress and prevent the floating and peeling of the adherend such as the die-bonding film 20 from the adhesive layer 12 by utilizing the state of exhibiting a relatively high adhesive strength, after that, the dicing die-bonding film X In the pick-up process for picking up the semiconductor chip with the die-bonding film from the dicing tape 10, after reducing the adhesive strength of the adhesive layer 12, the semiconductor chip with the die-bonding film can be appropriately picked up from the adhesive layer 12. It becomes possible.

Examples of such an adhesive force-reducing adhesive include a radiation-curable adhesive (a radiation-curable adhesive) and a heat-foamable adhesive. In the adhesive layer 12 of the present embodiment, one type of adhesive force-reducing adhesive may be used, or two or more adhesive force-reducing adhesive agents may be used. Further, the entire adhesive layer 12 may be formed from the adhesive force-reducing adhesive, or a part of the adhesive layer 12 may be formed from the adhesive force-reducing adhesive. For example, when the adhesive layer 12 has a single-layer structure, the entire adhesive layer 12 may be formed from an adhesive force-reducing adhesive, or a predetermined portion of the adhesive layer 12 (e.g., wafer attachment). The central region, which is the target region) is formed from the adhesive force-reducing adhesive, and the other portions (for example, the target region for wafering attachment and the region outside the central region) are non-adhesive force-reducing adhesive It may be formed from an agent. Further, when the adhesive layer 12 has a laminated structure, all the layers forming the laminated structure may be formed from the adhesive force-reducing adhesive, or some layers in the laminated structure may be formed from the adhesive force-reducing adhesive. may be formed from

As the radiation-curable adhesive in the adhesive layer 12, for example, an adhesive that is cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X rays can be used. A curable type adhesive (ultraviolet curable adhesive) can be particularly preferably used.

The radiation-curable adhesive in the adhesive layer 12 includes, for example, a base polymer such as an acrylic polymer as an acrylic adhesive, and a radiation-polymerizable monomer having a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples include additive-type radiation-curable pressure-sensitive adhesives containing components and oligomer components.

The above acrylic polymer preferably contains monomer units derived from an acrylic acid ester and/or a methacrylic acid ester as main monomer units in the largest proportion by mass. Hereinafter, "(meth)acryl" represents "acryl" and/or "methacryl".

Examples of the (meth)acrylic acid ester for forming the monomer unit of the acrylic polymer include hydrocarbon groups such as (meth)acrylic acid alkyl esters, (meth)acrylic acid cycloalkyl esters, and (meth)acrylic acid aryl esters. Containing (meth)acrylic acid esters may be mentioned. (Meth)acrylic acid alkyl esters include, for example, (meth)acrylic acid methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, iso Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, octadecyl esters, and eicosyl esters. (Meth)acrylic acid cycloalkyl esters include, for example, cyclopentyl and cyclohexyl esters of (meth)acrylic acid. (Meth)acrylic acid aryl esters include, for example, phenyl (meth)acrylate and benzyl (meth)acrylate. As the (meth)acrylic acid ester as the main monomer for the acrylic polymer, one type of (meth)acrylic acid ester may be used, or two or more types of (meth)acrylic acid ester may be used. . (Meth)acrylic acid ester as a main monomer in all the monomer components for forming the acrylic polymer, in order to appropriately develop the basic properties such as adhesiveness depending on the (meth)acrylic acid ester in the adhesive layer 12 is preferably 40% by mass or more, more preferably 60% by mass or more.

The acrylic polymer may contain monomer units derived from other monomers copolymerizable with the (meth)acrylic acid ester in order to improve its cohesive strength, heat resistance, and the like. Examples of such monomer components include functional groups such as carboxy group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile. Containing monomers, etc. are mentioned. Carboxy group-containing monomers include, for example, acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Anhydride monomers include, for example, maleic anhydride and itaconic anhydride. Examples of hydroxy group-containing monomers include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, ( 8-hydroxyoctyl meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and (4-hydroxymethylcyclohexyl)methyl (meth)acrylate. Glycidyl group-containing monomers include, for example, glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Sulfonic acid group-containing monomers include, for example, styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamido-2-methylpropanesulfonic acid, (meth)acrylamidopropanesulfonic acid, sulfopropyl (meth)acrylate, and (meth) ) acryloyloxynaphthalene sulfonic acid. Phosphate group-containing monomers include, for example, 2-hydroxyethyl acryloyl phosphate. As the other monomer for the acrylic polymer, one type of monomer may be used, or two or more types of monomers may be used. In order for the adhesive layer 12 to appropriately exhibit the basic properties of the (meth)acrylic acid ester such as adhesiveness, the proportion of the other monomer components in the total monomer components for forming the acrylic polymer is preferably is 60% by mass or less, more preferably 40% by mass or less.

Acrylic polymers contain monomer units derived from polyfunctional monomers copolymerizable with monomer components such as (meth)acrylic acid esters as main monomers in order to form a crosslinked structure in the polymer backbone. good too. Examples of such polyfunctional monomers include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, Pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy (meth)acrylate (i.e. polyglycidyl (meth)acrylate), polyester (meth)acrylates and urethane (meth)acrylates. As the polyfunctional monomer for the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. The ratio of the polyfunctional monomer in all the monomer components for forming the acrylic polymer is preferably It is 40% by mass or less, more preferably 30% by mass or less.

The acrylic polymer can be obtained by polymerizing raw material monomers for forming it. Polymerization techniques include, for example, solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the semiconductor device manufacturing method using the dicing tape 10 or dicing die-bonding film X, it is preferable that the amount of low-molecular-weight substances in the adhesive layer 12 in the dicing tape 10 or dicing die-bonding film X is small. , the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000.

The adhesive layer 12 or the adhesive for forming it may contain, for example, an external cross-linking agent in order to increase the number average molecular weight of the base polymer such as an acrylic polymer. Examples of external cross-linking agents for forming a cross-linked structure by reacting with a base polymer such as an acrylic polymer include polyisocyanate compounds, epoxy compounds, polyol compounds (such as polyphenol compounds), aziridine compounds, and melamine-based cross-linking agents. . The content of the external cross-linking agent in the adhesive layer 12 or the adhesive for forming it is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the base polymer.

Examples of the radiation-polymerizable monomer component for forming the radiation-curable adhesive include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, and pentaerythritol tetra(meth)acrylate. acrylates, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate. Examples of the radiation-polymerizable oligomer component for forming the radiation-curable pressure-sensitive adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers. things are appropriate. The total content of radiation-polymerizable monomer components and oligomer components in the radiation-curable pressure-sensitive adhesive is determined within a range that can appropriately reduce the adhesive strength of the pressure-sensitive adhesive layer 12 to be formed. For 100 parts by mass, it is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass. Further, as the additive-type radiation-curable pressure-sensitive adhesive, for example, one disclosed in JP-A-60-196956 may be used.

The radiation-curable adhesive in the adhesive layer 12 contains, for example, a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond in the polymer side chain, in the polymer main chain, or at the polymer main chain end. Intrinsic radiation-curable pressure-sensitive adhesives are also included. Such an internal radiation-curable pressure-sensitive adhesive is suitable for suppressing unintended changes over time in pressure-sensitive adhesive properties due to migration of low-molecular-weight components within the formed pressure-sensitive adhesive layer 12 .

As the base polymer contained in the internal radiation-curable pressure-sensitive adhesive, one having an acrylic polymer as a basic skeleton is preferable. As the acrylic polymer forming such a basic skeleton, the acrylic polymer described above can be employed. As a technique for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, an acrylic polymer is obtained by copolymerizing raw material monomers containing a monomer having a predetermined functional group (first functional group). After obtaining, a compound having a predetermined functional group (second functional group) and a radiation-polymerizable carbon-carbon double bond capable of reacting with and bonding to the first functional group is carbon-carbon A method of subjecting an acrylic polymer to a condensation reaction or an addition reaction while maintaining the radiation polymerizability of the double bond can be mentioned.

Combinations of the first functional group and the second functional group include, for example, a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group. and hydroxy groups. Among these combinations, a combination of a hydroxy group and an isocyanate group and a combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of ease of reaction tracking. In addition, it is technically difficult to produce a polymer having a highly reactive isocyanate group. More preferred is when the group is a hydroxy group and said second functional group is an isocyanate group. In this case, examples of isocyanate compounds having both a radiation-polymerizable carbon-carbon double bond and an isocyanate group as the second functional group include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, and m-isopropenyl-α, α-dimethylbenzyl isocyanate can be mentioned. In addition, as the acrylic polymer with the first functional group, those containing monomer units derived from the above-mentioned hydroxy group-containing monomers are suitable, such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glycol. Those containing monomer units derived from ether compounds such as monovinyl ether are also suitable.

The radiation-curable adhesive in the adhesive layer 12 preferably contains a photopolymerization initiator. Examples of photopolymerization initiators include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphor. quinones, halogenated ketones, acylphosphinooxides, and acylphosphonates. Examples of α-ketol compounds include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylacetophenone, 2-methyl-2-hydroxypro Piophenone, and 1-hydroxycyclohexylphenyl ketone. Acetophenone compounds include, for example, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, and 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholino Propane-1 can be mentioned. Benzoin ether compounds include, for example, benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Ketal compounds include, for example, benzyl dimethyl ketal. Examples of aromatic sulfonyl chloride compounds include 2-naphthalenesulfonyl chloride. Examples of photoactive oxime compounds include 1-phenone-1,2-propanedione-2-(O-ethoxycarbonyl)oxime. Benzophenone-based compounds include, for example, benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Thioxanthone compounds include, for example, thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl Thioxanthones can be mentioned. The content of the photopolymerization initiator in the radiation-curable adhesive in the adhesive layer 12 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer such as an acrylic polymer.

The above heat-foamable adhesive in the adhesive layer 12 is an adhesive containing a component (foaming agent, thermally expandable microspheres, etc.) that foams or expands when heated. Examples include foaming agents and organic foaming agents, and examples of heat-expandable microspheres include microspheres having a structure in which a substance that easily gasifies and expands upon heating is encapsulated in the shell. Inorganic foaming agents include, for example, ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium borohydride, and azides. Organic blowing agents include, for example, alkane hydrochlorides such as trichloromonofluoromethane and dichloromonofluoromethane, azo compounds such as azobisisobutyronitrile, azodicarbonamide, barium azodicarboxylate, and paratoluenesulfonyl. hydrazide, diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis(benzenesulfonylhydrazide), hydrazine compounds such as allylbis(sulfonylhydrazide), p-toluylenesulfonyl semicarbazide and 4,4'-oxybis Semicarbazide compounds such as (benzenesulfonyl semicarbazide), triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole, and N,N'-dinitrosopentamethylenetetramine and N,N'-dimethyl -N,N'-dinitrosoterephthalamide and other N-nitroso compounds. Substances that can be easily gasified and expanded by heating to form the heat-expandable microspheres described above include, for example, isobutane, propane, and pentane. Thermally expandable microspheres can be produced by encapsulating a substance that is easily gasified and expanded by heating in a shell-forming substance by a coacervation method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal melting properties and a substance capable of bursting due to the action of thermal expansion of the enclosing substance can be used. Such materials include, for example, vinylidene chloride-acrylonitrile copolymers, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfones.

Examples of the non-adhesion-reducing pressure-sensitive adhesive include pressure-sensitive pressure-sensitive adhesives and radiation-curable pressure-sensitive adhesives obtained by pre-curing the radiation-curable pressure-sensitive adhesives described above with respect to the pressure-reducing pressure-sensitive adhesives. be done. In the adhesive layer 12 of the present embodiment, one type of non-reducing adhesive strength adhesive may be used, or two or more types of non-reducing adhesive strength adhesive may be used. Further, the entire adhesive layer 12 may be formed from the non-adhesive force reducing adhesive, or a part of the adhesive layer 12 may be formed from the non-adhesive force reducing adhesive. For example, when the adhesive layer 12 has a single-layer structure, the entire adhesive layer 12 may be formed from a non-adhesion-reducing adhesive, or a predetermined portion of the adhesive layer 12 (for example, wafering). A region outside the target bonding region of the wafer) is formed from a non-reducing adhesive force adhesive, and other portions (for example, a central region that is the target bonding region of the wafer) It may be formed from a reduced tack pressure sensitive adhesive. In addition, when the adhesive layer 12 has a laminated structure, all the layers forming the laminated structure may be formed from a non-adhesive force-reducing adhesive, or some layers in the laminated structure may be formed from a non-adhesive force-reducing adhesive. It may be formed from an adhesive.

A radiation-curing pressure-sensitive adhesive that has been pre-cured by irradiation (irradiated radiation-curing pressure-sensitive adhesive), even if its adhesive strength is reduced by irradiation, the adhesion caused by the polymer component it contains. It is possible for the dicing tape pressure-sensitive adhesive layer to exhibit the minimum required adhesive strength in the dicing process. In the present embodiment, when the irradiated radiation-curable adhesive is used, the entire adhesive layer 12 may be formed from the irradiated radiation-curable adhesive in the surface spreading direction of the adhesive layer 12, A portion of the pressure-sensitive adhesive layer 12 may be formed from the irradiated radiation-curable pressure-sensitive adhesive and the other portion may be formed from the non-irradiated radiation-curable pressure-sensitive adhesive.

The dicing die-bonding film X containing the irradiated radiation-curable adhesive in at least part of the adhesive layer 12 can be produced, for example, through the following processes. First, on the base material 11 of the dicing tape 10, a pressure-sensitive adhesive layer (radiation-curable pressure-sensitive adhesive layer) is formed using a radiation-curable pressure-sensitive adhesive. Next, a predetermined portion or the entirety of this radiation-curable pressure-sensitive adhesive layer is irradiated with radiation to form the pressure-sensitive adhesive layer 12 at least partially containing the irradiated radiation-curable pressure-sensitive adhesive. After that, on the adhesive layer 12, an adhesive layer to be a die-bonding film 20, which will be described later, is formed. Alternatively, the dicing die-bonding film X containing the irradiated radiation-curable adhesive in at least part of the adhesive layer 12 can be produced through the following process. First, on the base material 11 of the dicing tape 10, a pressure-sensitive adhesive layer (radiation-curable pressure-sensitive adhesive layer) is formed using a radiation-curable pressure-sensitive adhesive. Next, an adhesive layer that will become a die-bonding film 20, which will be described later, is formed on this radiation-curable adhesive layer. After that, a predetermined part or the whole of the radiation-curable pressure-sensitive adhesive layer is irradiated with radiation to form the pressure-sensitive adhesive layer 12 at least partially containing the irradiated radiation-curable pressure-sensitive adhesive.

On the other hand, as the pressure-sensitive adhesive in the adhesive layer 12, a known or commonly used adhesive can be used, and an acrylic adhesive or a rubber-based adhesive having an acrylic polymer as a base polymer can be preferably used. . When the pressure-sensitive adhesive layer 12 contains an acrylic pressure-sensitive adhesive, the acrylic polymer, which is the base polymer of the acrylic pressure-sensitive adhesive, preferably contains a monomer unit derived from a (meth)acrylic acid ester at a mass ratio of It is included as the main monomer unit that is the most abundant in . Such acrylic polymers include, for example, the acrylic polymers described above with respect to radiation-curable adhesives.

The adhesive layer 12 or the adhesive for forming it may contain, in addition to the components described above, a cross-linking accelerator, a tackifier, an antioxidant, a colorant such as a pigment or a dye, and the like. . The coloring agent may be a compound that becomes colored upon exposure to radiation. Such compounds include, for example, leuco dyes.

The thickness of the adhesive layer 12 is preferably 1-50 μm, more preferably 2-30 μm, and more preferably 5-25 μm. Such a configuration is suitable, for example, when the pressure-sensitive adhesive layer 12 contains a radiation-curable pressure-sensitive adhesive, in order to balance the adhesive strength of the pressure-sensitive adhesive layer 12 to the die bond film 20 before and after radiation curing.

As described above, the dicing tape 10 having a laminated structure including the base material 11 and the adhesive layer 12 as described above has a dicing tape test piece with a width of 20 mm. It can exhibit tensile stresses in the range of 15-32 MPa at least some strain values in the 30% range. In order to ensure a sufficient tensile length when the dicing die-bonding film X provided with the dicing tape 10 is used in the expanding step, the dicing tape 10 can exhibit a tensile stress within the range of 15 to 32 MPa in the tensile test. The strain value is preferably 6% or more, more preferably 7% or more, more preferably 8% or more. In addition, in order to avoid the necessary tensile length from becoming excessive when the dicing die-bonding film X including the dicing tape 10 is used in the expanding process, the dicing tape 10 has a tensile strength in the range of 15 to 32 MPa in the tensile test. The strain value that can indicate the tensile stress within is preferably 20% or less, more preferably 17% or less, more preferably 15% or less, more preferably 13% or less. Further, the tensile stress in the tensile test for the dicing tape 10 is in the range of 15 to 32 MPa as described above, preferably in the range of 20 to 32 MPa.

In the tensile test, the lower the temperature condition, the greater the tensile stress exhibited by the dicing tape 10 or its test piece. The tensile speed condition in the tensile test is preferably 10 to 1000 mm/min, more preferably 100 to 1000 mm/min. That is, the dicing tape 10 has at least a partial strain value in the range of 5 to 30% in a tensile test performed under these measurement conditions, preferably 6% or more, more preferably 7% or more, more preferably 8% above and preferably 20% or less, more preferably 17% or less, more preferably 15% or less, more preferably 13% or less, at a strain value of 15 to 32 MPa, more preferably 20 to 32 MPa It can show stress.

The modulus of elasticity of the dicing tape 10 at −15° C. is preferably 500 MPa or higher, more preferably 700 MPa or higher, more preferably 900 MPa or higher, and more preferably 1000 MPa or higher. Such a configuration is suitable for generating a tensile stress within the range of 15-32 MPa at least a portion of the strain value within the range of 5-30% in the above tensile test for the dicing tape 10 .

The die bond film 20 of the dicing die bond film X has a structure capable of functioning as a thermosetting adhesive for die bonding. In this embodiment, the adhesive for forming the die-bonding film 20 may have a composition containing a thermosetting resin and, for example, a thermoplastic resin as a binder component, or may react with a curing agent to form a bond. It may have a composition comprising a thermoplastic resin with thermosetting functional groups to obtain. When the adhesive for forming the die-bonding film 20 has a composition containing a thermoplastic resin with a thermosetting functional group, the adhesive need not contain a thermosetting resin (epoxy resin, etc.). Such a die-bonding film 20 may have a single-layer structure or a multi-layer structure.

When the die-bonding film 20 contains a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting resin. polyimide resin. In forming the die-bonding film 20, one kind of thermosetting resin may be used, or two or more kinds of thermosetting resins may be used. Epoxy resin is preferable as the thermosetting resin contained in the die-bonding film 20 because it tends to contain less ionic impurities that may cause corrosion of the semiconductor chip to be die-bonded. Phenol resin is preferable as a curing agent for epoxy resin.

Examples of epoxy resins include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, ortho cresol Novolak-type, trishydroxyphenylmethane-type, tetraphenylolethane-type, hydantoin-type, trisglycidyl isocyanurate-type, and glycidylamine-type epoxy resins are included. Novolak type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylolethane type epoxy resin are highly reactive with phenolic resins used as curing agents and have excellent heat resistance. 20 as an epoxy resin.

Phenolic resins that can act as curing agents for epoxy resins include, for example, novolac-type phenolic resins, resol-type phenolic resins, and polyoxystyrenes such as polyparaoxystyrene. Novolac-type phenolic resins include, for example, phenol novolak resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, and nonylphenol novolak resins. As the phenolic resin that can act as a curing agent for the epoxy resin, one kind of phenolic resin may be used, or two or more kinds of phenolic resins may be used. Phenol novolac resin and phenol aralkyl resin tend to improve the connection reliability of the adhesive when used as a curing agent for epoxy resin as a die bonding adhesive. is preferred as a curing agent for

In the die-bonding film 20, from the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenolic resin, the phenolic resin preferably contains 0.5 hydroxyl groups per equivalent of epoxy groups in the epoxy resin component. It is included in an amount of 5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

The thermoplastic resin contained in the die bond film 20 includes, for example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluororesins. . In forming the die-bonding film 20, one kind of thermoplastic resin may be used, or two or more kinds of thermoplastic resins may be used. As the thermoplastic resin contained in the die-bonding film 20, an acrylic resin is preferable because it contains few ionic impurities and has high heat resistance, so that the bonding reliability of the die-bonding film 20 can be easily ensured.

The acrylic resin contained as the thermoplastic resin in the die-bonding film 20 preferably contains a monomer unit derived from (meth)acrylic acid ester as the main monomer unit having the largest mass ratio. As such a (meth)acrylic acid ester, for example, the same (meth)acrylic acid ester as described above regarding the acrylic polymer which is one component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be used. can. The acrylic resin contained as the thermoplastic resin in the die-bonding film 20 may contain monomer units derived from other monomers copolymerizable with the (meth)acrylic acid ester. Examples of such other monomer components include functional monomers such as carboxy group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide and acrylonitrile. Examples include group-containing monomers and various multifunctional monomers. Specifically, the acrylic polymer, which is one component of the radiation-curable adhesive for forming the adhesive layer 12, can be copolymerized with (meth)acrylic acid ester. As other monomers, those similar to those described above can be used. From the viewpoint of achieving high cohesion in the die bond film 20, the acrylic resin contained in the die bond film 20 is preferably a (meth)acrylic acid ester (in particular, a (meth)acrylic ester having an alkyl group having 4 or less carbon atoms. acrylic acid alkyl ester), a carboxy group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (especially a polyglycidyl-based polyfunctional monomer), more preferably ethyl acrylate and acrylic It is a copolymer of butyl acid, acrylic acid, acrylonitrile and polyglycidyl (meth)acrylate.

The content of the thermosetting resin in the die bond film 20 is preferably 5 to 60% by mass, more preferably 10 to 50% by mass, from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the die bond film 20. is.

When the die-bonding film 20 contains a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming the thermosetting functional group-containing acrylic resin preferably contains a monomer unit derived from (meth)acrylic acid ester as the main monomer unit having the largest mass ratio. As such a (meth)acrylic acid ester, for example, the same (meth)acrylic acid ester as described above regarding the acrylic polymer which is one component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be used. can. On the other hand, examples of thermosetting functional groups for forming thermosetting functional group-containing acrylic resins include glycidyl groups, carboxyl groups, hydroxy groups, and isocyanate groups. Among these, a glycidyl group and a carboxy group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxy group-containing acrylic resin can be preferably used. As the curing agent for the thermosetting functional group-containing acrylic resin, for example, the above-described external cross-linking agent that may be used as one component of the radiation-curable adhesive for forming the adhesive layer 12 can be used. can. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenol-based compound can be suitably used as the curing agent, for example, the various phenolic resins described above can be used.

In order to achieve a certain degree of cross-linking in the die-bonding film 20 before it is cured for die-bonding, for example, the above-mentioned resin contained in the die-bonding film 20 reacts with the functional groups at the ends of the molecular chains and bonds. It is preferable to mix a polyfunctional compound that can be used as a cross-linking agent with the die-bonding film-forming resin composition. Such a configuration is suitable for improving the adhesive properties of the die-bonding film 20 at high temperatures and improving the heat resistance. Examples of such cross-linking agents include polyisocyanate compounds. Examples of polyisocyanate compounds include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyhydric alcohols and diisocyanates. The content of the cross-linking agent in the die-bonding film-forming resin composition is determined from the viewpoint of improving the cohesion of the formed die-bonding film 20 with respect to 100 parts by mass of the resin having the functional group capable of reacting and bonding with the cross-linking agent. is preferably 0.05 parts by mass or more, and preferably 7 parts by mass or less from the viewpoint of improving the adhesive strength of the formed die-bonding film 20 . Moreover, as a cross-linking agent in the die-bonding film 20, other polyfunctional compounds such as epoxy resin may be used in combination with the polyisocyanate compound.

The die-bonding film 20 may contain filler. Physical properties of the die-bonding film 20 such as electrical conductivity, thermal conductivity, and elastic modulus can be adjusted by blending the filler into the die-bonding film 20 . Examples of fillers include inorganic fillers and organic fillers, with inorganic fillers being particularly preferred. Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, and crystals. In addition to crystalline silica and amorphous silica, simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon black and graphite can be used. The filler may have various shapes such as spherical, needle-like, and flake-like. As the filler in the die bond film 20, one type of filler may be used, or two or more types of filler may be used.

When the die-bonding film 20 contains a filler, the filler preferably has an average particle size of 0.005 to 10 μm, more preferably 0.005 to 1 μm. The configuration in which the filler has an average particle diameter of 0.005 μm or more is suitable for realizing high wettability and adhesiveness to an adherend such as a semiconductor wafer in the die-bonding film 20 . The configuration in which the average particle diameter of the filler is 10 μm or less is suitable for obtaining a sufficient filler addition effect in the die-bonding film 20 and ensuring heat resistance. The average particle size of the filler can be determined using, for example, a photometric particle size distribution meter (trade name “LA-910”, manufactured by HORIBA, Ltd.).

The adhesive layer 20 may contain other components as needed. Such other components include, for example, flame retardants, silane coupling agents, and ion trapping agents. Flame retardants include, for example, antimony trioxide, antimony pentoxide, and brominated epoxy resins. Silane coupling agents include, for example, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of ion trapping agents include hydrotalcites, bismuth hydroxide, hydrous antimony oxide (e.g. "IXE-300" manufactured by Toagosei Co., Ltd.), and zirconium phosphate having a specific structure (e.g. Toagosei Co., Ltd. " IXE-100"), magnesium silicate (eg "Kyoward 600" manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (eg "Kyoward 700" manufactured by Kyowa Chemical Industry Co., Ltd.). Compounds that can form complexes with metal ions can also be used as ion trapping agents. Such compounds include, for example, triazole-based compounds, tetrazole-based compounds, and bipyridyl-based compounds. Among these, triazole compounds are preferred from the viewpoint of the stability of the complex formed with metal ions. Examples of such triazole compounds include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, carboxybenzotriazole, 2-(2-hydroxy- 5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3-t-butyl-5-methylphenyl) )-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-t-amylphenyl)benzotriazole, 2-(2-hydroxy-5-t-octylphenyl)benzotriazole, 6-(2 -benzotriazolyl)-4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1-(2',3'-hydroxypropyl)benzotriazole, 1- (1,2-dicarboxydiethyl)benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-t-pentyl-6-{(H-benzotriazol-1-yl)methyl}phenol , 2-(2-hydroxy-5-t-butylphenyl)-2H-benzotriazole, C7-C9-alkyl-3-[3-(2H-benzotriazol-2-yl)-5-(1,1- dimethylethyl)-4-hydroxyphenyl]propion ether, octyl-3-[3-t-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-ethylhexyl -3-[3-t-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-(2H-benzotriazol-2-yl)-6-( 1-methyl-1-phenylethyl)-4-(1,1,3,3-tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-t-butylphenol, 2-(2 -hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-5-t-octylphenyl)-benzotriazole, 2-(3-t-butyl-2-hydroxy-5-methylphenyl)-5- Chlorobenzotriazole, 2-(2-hydroxy-3,5-di-t-amylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chloro- Benzotriazole, 2-[2-hydroxy-3,5-di(1,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazol-2-yl) -4-(1,1,3,3-tetramethylbutyl)phenol], 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl]-2H-benzotriazole and methyl -3-[3-(2H-benzotriazol-2-yl)-5-t-butyl-4-hydroxyphenyl]propionate. Also, prescribed hydroxyl group-containing compounds such as quinol compounds, hydroxyanthraquinone compounds, and polyphenol compounds can be used as ion trapping agents. Specific examples of such hydroxyl group-containing compounds include 1,2-benzenediol, alizarin, anthralphine, tannin, gallic acid, methyl gallate, and pyrogallol. As the other components as described above, one type of component may be used, or two or more types of components may be used.

The thickness of the die-bonding film 20 is, for example, in the range of 1-200 μm. The upper limit of the thickness is preferably 100 μm, more preferably 80 μm. The lower limit of the thickness is preferably 3 μm, more preferably 5 μm.

The dicing die-bonding film X having the structure described above can be produced, for example, as follows.

The dicing tape 10 of the dicing die-bonding film X can be produced by providing an adhesive layer 12 on a prepared base material 11 . For example, the resin substrate 11 is produced by a film forming method such as a calender film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, or a dry lamination method. be able to. The pressure-sensitive adhesive layer 12 is formed by preparing a pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer 12, and applying the pressure-sensitive adhesive composition onto the substrate 11 or onto a predetermined separator (that is, a release liner). It can be formed by forming a layer and, if necessary, desolvating the pressure-sensitive adhesive composition layer (at this time, heat-crosslinking if necessary). Examples of methods for applying the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating. The temperature for desolvating the adhesive composition layer is, for example, 80 to 150° C., and the time is, for example, 0.5 to 5 minutes. When the adhesive layer 12 is formed on the separator, the adhesive layer 12 with the separator is attached to the substrate 11 . The dicing tape 10 can be produced as described above.

For the die-bonding film 20 of the dicing die-bonding film X, after preparing an adhesive composition for forming the die-bonding film 20, the adhesive composition is applied on a predetermined separator to form an adhesive composition layer. It can be produced by removing the solvent from the adhesive composition layer according to the requirements. Examples of methods for applying the adhesive composition include roll coating, screen coating, and gravure coating. The temperature for desolvating the adhesive composition layer is, for example, 70 to 160° C., and the time is, for example, 1 to 5 minutes.

In the production of the dicing die-bonding film X, next, the die-bonding film 20 is adhered to the pressure-sensitive adhesive layer 12 side of the dicing tape 10 by, for example, pressure bonding. The bonding temperature is, for example, 30 to 50.degree. C., preferably 35 to 45.degree. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm, preferably 1 to 10 kgf/cm. When the adhesive layer 12 is a radiation-curable adhesive layer as described above, when the adhesive layer 12 is irradiated with radiation such as ultraviolet rays after bonding the die-bonding film 20, for example, the adhesive is applied from the substrate 11 side. The layer 12 is irradiated with radiation, the dose being, for example, 50-500 mJ/cm ² , preferably 100-300 mJ/cm ² . In the dicing die-bonding film X, the region (irradiation region R) where irradiation is performed as a measure to reduce the adhesive force of the adhesive layer 12 is usually a region in the adhesive layer 12 excluding the peripheral portion in the bonding region of the die-bonding film 20. be.

As described above, for example, the dicing die-bonding film X shown in FIG. 1 can be produced. The dicing die-bonding film X may be provided with a separator (not shown) on the die-bonding film 20 side so as to cover at least the die-bonding film 20 . If the die-bonding film 20 is smaller than the pressure-sensitive adhesive layer 12 of the dicing tape 10 and there is a region where the die-bonding film 20 is not adhered to the pressure-sensitive adhesive layer 12, for example, the separator separates the die-bonding film 20 and the pressure-sensitive adhesive layer 12. It may be provided in at least a covering form. The separator is an element for protecting at least the die-bonding film 20 (for example, the die-bonding film 20 and the adhesive layer 12) from being exposed, and is peeled off from the dicing die-bonding film X when using it. Examples of the separator include polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, plastic film and paper surface-coated with a release agent such as a fluorine-based release agent and a long-chain alkyl acrylate release agent. .

2 to 7 show a semiconductor device manufacturing method according to one embodiment of the present invention.

In this semiconductor device manufacturing method, first, as shown in FIGS. 2A and 2B, dividing grooves 30a are formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already fabricated on the side of the first surface Wa of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. It is In this step, after the wafer processing tape T1 having the adhesive surface T1a is attached to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held in a state where the semiconductor wafer W is held by the wafer processing tape T1. A division groove 30a having a predetermined depth is formed on the first surface Wa side using a rotating blade such as a dicing machine. The dividing grooves 30a are gaps for separating the semiconductor wafer W into semiconductor chips (the dividing grooves 30a are schematically represented by thick lines in FIGS. 2 to 4).

Next, as shown in FIG. 2C, a wafer processing tape T2 having an adhesive surface T2a is attached to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is attached from the semiconductor wafer W. stripping is performed.

Next, as shown in FIG. 2(d), in a state where the semiconductor wafer W is held by the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb to a predetermined thickness. (wafer thinning process). Grinding can be performed using a grinding device with a grinding wheel. By this wafer thinning process, a semiconductor wafer 30A that can be separated into a plurality of semiconductor chips 31 is formed in this embodiment. Specifically, the semiconductor wafer 30A has a portion (connecting portion) that connects portions of the wafer that are to be separated into the plurality of semiconductor chips 31 on the second surface Wb side. The thickness of the connecting portion of the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 μm, preferably 3 to 20 μm. is.

Next, the semiconductor wafer 30A held by the wafer processing tape T2 is attached to the die bond film 20 of the dicing die bond film X, as shown in FIG. 3(a). Thereafter, as shown in FIG. 3B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die-bonding film X is a radiation-curable pressure-sensitive adhesive layer, the semiconductor wafer 30A is bonded to the die-bonding film 20 instead of the above-described radiation irradiation in the manufacturing process of the dicing die-bonding film X. After that, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the substrate 11 side. The dose is, for example, 50-500 mJ/cm ² , preferably 100-300 mJ/cm ² . In the dicing die-bonding film X, the region where the irradiation is performed as a measure to reduce the adhesive force of the adhesive layer 12 (the irradiation region R shown in FIG. 1) is, for example, the peripheral edge portion in the bonding region of the die-bonding film 20 in the adhesive layer 12. This is the area excluding

Next, after the ring frame 41 is attached on the adhesive layer 12 of the dicing tape 10 in the dicing die-bonding film X, the dicing die-bonding film X with the semiconductor wafer 30A is expanded as shown in FIG. It is fixed to the holder 42 of the device.

Next, a first expansion process (cool expansion process) under relatively low temperature conditions is performed as shown in FIG. At the same time, the die-bonding film 20 of the dicing die-bonding film X is cut into small pieces of the die-bonding film 21 to obtain semiconductor chips 31 with die-bonding films. In this step, a hollow columnar push-up member 43 provided in the expanding device is lifted in contact with the dicing tape 10 on the lower side of the dicing die-bonding film X in the drawing, and the dicing die-bonding film X bonded to the semiconductor wafer 30A is diced. The tape 10 is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed under the conditions that a tensile stress within the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the dicing tape 10 . The temperature conditions in the cool expansion step are, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expansion speed (the speed at which the push-up member 43 rises) in the cool expansion process is preferably 0.1 to 100 mm/sec. Further, the expansion amount in the cool expansion step is preferably 3 to 16 mm.

In this step, the semiconductor wafer 30</b>A is split into individual semiconductor chips 31 by breaking a portion that is thin and fragile. Along with this, in this process, deformation is suppressed in each region where each semiconductor chip 31 is in close contact with the die-bonding film 20 in close contact with the adhesive layer 12 of the dicing tape 10 to be expanded, while the semiconductor chip 31 is A tensile stress generated in the dicing tape 10 acts on the portions facing the dividing grooves between the dicing tape 10 in a state in which such a deformation suppressing action does not occur. As a result, portions of the die-bonding film 20 facing the dividing grooves between the semiconductor chips 31 are cleaved. After this step, as shown in FIG. 4C, the push-up member 43 is lowered to release the expanded state of the dicing tape 10 .

Next, a second expanding step is performed under relatively high temperature conditions as shown in FIG. 5A to widen the distance (clearance) between the semiconductor chips 31 with the die-bonding film. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised again, and the dicing tape 10 of the dicing die-bonding film X is expanded. The temperature condition in the second expanding step is, for example, 10°C or higher, preferably 15 to 30°C. The expansion speed (the speed at which the push-up member 43 rises) in the second expansion step is, for example, 0.1 to 10 mm/sec, preferably 0.3 to 1 mm/sec. Also, the expansion amount in the second expansion step is, for example, 3 to 16 mm. In this step, the separation distance between the semiconductor chips 31 with the die-bonding film is increased to the extent that the semiconductor chips 31 with the die-bonding film can be appropriately picked up from the dicing tape 10 in the pick-up step described later. After this step, as shown in FIG. 5B, the push-up member 43 is lowered to release the expanded state of the dicing tape 10 . In order to suppress the narrowing of the separation distance between the semiconductor chips 31 with the die bonding film on the dicing tape 10 after the expanded state is released, the portion of the dicing tape 10 outside the semiconductor chip 31 holding area is removed before the expanded state is released. Heat shrinkage is preferred.

Next, after a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 10 with the semiconductor chip 31 with the die-bonding film using a cleaning liquid such as water, as shown in FIG. The semiconductor chip 31 is picked up from the dicing tape 10 (pickup step). For example, the semiconductor chip 31 with the die-bonding film to be picked up is pushed up through the dicing tape 10 by raising the pin member 44 of the pick-up mechanism on the lower side of the dicing tape 10 in the drawing, and then is sucked and held by the suction jig 45 . . In the pick-up process, the thrust speed of the pin member 44 is, for example, 1 to 100 mm/sec, and the thrust amount of the pin member 44 is, for example, 50 to 3000 μm.

Next, as shown in FIG. 7A, the picked-up semiconductor chip 31 with a die-bonding film is temporarily fixed to a predetermined adherend 51 via the die-bonding film 21 . Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive strength of the die-bonding film 21 at 25° C. when temporarily fixed to the adherend 51 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa. The configuration in which the die bond film 21 has a shear adhesive strength of 0.2 MPa or more is such that in the wire bonding process described later, shear occurs at the bonding surface between the die bond film 21 and the semiconductor chip 31 or the adherend 51 due to ultrasonic vibration or heating. It is suitable for suppressing the occurrence of deformation and appropriately performing wire bonding. Further, the shear adhesive strength of the die-bonding film 21 at 175° C. when temporarily fixed to the adherend 51 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa.

Next, as shown in FIG. 7B, electrode pads (not shown) of the semiconductor chip 31 and terminal portions (not shown) of the adherend 51 are electrically connected through bonding wires 52 ( wire bonding process). The connection between the electrode pads of the semiconductor chip 31 and the terminal portions of the adherend 51 and the bonding wires 52 is realized by ultrasonic welding accompanied by heating so as not to thermally harden the die bond film 21 . A gold wire, an aluminum wire, or a copper wire, for example, can be used as the bonding wire 52 . The wire heating temperature in wire bonding is, for example, 80 to 250.degree. C., preferably 80 to 220.degree. Also, the heating time is several seconds to several minutes.

Next, as shown in FIG. 7C, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wires 52 on the adherend 51 (sealing step). In this step, the thermosetting of the die-bonding film 21 proceeds. In this step, the sealing resin 53 is formed by, for example, a transfer molding technique using a mold. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In this process, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185° C., and the heating time is, for example, 60 seconds to several minutes. If the curing of the sealing resin 53 does not proceed sufficiently in this step (sealing step), a post-curing step for completely curing the sealing resin 53 is performed after this step. Even if the die-bonding film 21 is not completely heat-cured in the sealing process, the die-bonding film 21 can be completely heat-cured together with the sealing resin 53 in the post-curing process. In the post-curing step, the heating temperature is, for example, 165-185° C., and the heating time is, for example, 0.5-8 hours.

As described above, a semiconductor device can be manufactured.

In this embodiment, as described above, after the semiconductor chip 31 with the die-bonding film is temporarily fixed to the adherend 51, the wire-bonding process is performed without the die-bonding film 21 being completely thermally cured. Alternatively, in the present invention, the wire bonding process may be performed after the semiconductor chip 31 with the die-bonding film is temporarily fixed to the adherend 51 and then the die-bonding film 21 is thermally cured.

In the semiconductor device manufacturing method according to the present invention, the wafer thinning process shown in FIG. 8 may be performed instead of the wafer thinning process described above with reference to FIG. 2(d). After the process described above with reference to FIG. 2(c), in the wafer thinning process shown in FIG. A semiconductor wafer divided body 30B is formed which is thinned by grinding from the second surface Wb to the end, and which includes a plurality of semiconductor chips 31 and is held by the wafer processing tape T2. In this step, a method (first method) of grinding the wafer until the dividing grooves 30a themselves are exposed on the second surface Wb side may be adopted, or the dividing grooves 30a may be ground from the second surface Wb side to reach the dividing grooves 30a. A method of grinding the wafer to the front and then forming a semiconductor wafer divided body 30B by causing a crack to occur between the dividing groove 30a and the second surface Wb by the action of pressing force from the rotary grindstone to the wafer (second method). method) may be adopted. The depth from the first surface Wa of the dividing grooves 30a formed as described above with reference to FIGS. . In FIG. 8, the dividing groove 30a that has undergone the first method, or the dividing groove 30a that has undergone the second method and the cracks connected thereto are schematically represented by thick lines. In the present invention, the semiconductor wafer divisions 30B manufactured in this manner are attached to the dicing die bond film X instead of the semiconductor wafer 30A, and then the steps described above with reference to FIGS. 3 to 7 are performed. may

9A and 9B show the first expansion step (cool expansion step) performed after the semiconductor wafer division 30B is attached to the dicing die-bonding film X. FIG. In this step, a hollow columnar push-up member 43 provided in the expanding device is lifted in contact with the dicing tape 10 at the lower side of the dicing die-bonding film X in the drawing, and the dicing die-bonding film X to which the semiconductor wafer divisions 30B are bonded together. is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer division 30B. This expansion is performed under the conditions that a tensile stress within the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the dicing tape 10 . The temperature condition in this step is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expansion speed (the speed at which the push-up member 43 rises) in this step is preferably 1 to 500 mm/sec. Moreover, the amount of expansion in this step is preferably 1 to 10 mm. Through such a cool expansion process, the die-bonding film 20 of the dicing die-bonding film X is cut into small pieces of the die-bonding film 21 to obtain semiconductor chips 31 with die-bonding films. Specifically, in this step, in the die bond film 20 that is in close contact with the adhesive layer 12 of the dicing tape 10 to be expanded, deformation is suppressed in each region where each semiconductor chip 31 of the semiconductor wafer division 30B is in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the portions facing the dividing grooves 30a between the semiconductor chips 31 in a state where such a deformation suppressing action does not occur. As a result, portions of the die-bonding film 20 facing the dividing grooves 30a between the semiconductor chips 31 are cleaved.

In the semiconductor device manufacturing method according to the present invention, instead of the above-described configuration in which the semiconductor wafer 30A or the semiconductor wafer divided body 30B is bonded to the dicing die bond film X, the semiconductor wafer 30C is manufactured as follows. It may be attached to the dicing die-bonding film X.

As shown in FIGS. 10(a) and 10(b), first, a modified region 30b is formed in a semiconductor wafer W. As shown in FIGS. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already fabricated on the side of the first surface Wa of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. It is In this step, after the wafer processing tape T3 having the adhesive surface T3a is attached to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is collected inside the wafer while being held by the wafer processing tape T3. The laser beams with the light points aligned are irradiated along the dividing line to the semiconductor wafer W from the side opposite to the wafer processing tape T3, and the semiconductor wafer W is ablated by multiphoton absorption. A modified region 30b is formed. The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor chips. A method of forming the modified region 30b on the dividing line by irradiating a laser beam on a semiconductor wafer is described in detail, for example, in Japanese Unexamined Patent Application Publication No. 2002-192370. It is adjusted appropriately within the range of the following conditions.
<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser Wavelength 1064 nm
Laser light spot cross-sectional area 3.14×10 ⁻⁸ cm ²
Oscillation mode Q-switch pulse Repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00
Polarization characteristics Linear polarization (B) condenser lens Magnification 100 times or less NA 0.55
Transmittance to laser light wavelength: 100% or less (C) Movement speed of mounting table on which semiconductor substrate is mounted: 280 mm/sec or less

Next, as shown in FIG. 10(c), in a state where the semiconductor wafer W is held by the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb to a predetermined thickness. By this, a semiconductor wafer 30C that can be separated into a plurality of semiconductor chips 31 is formed (wafer thinning step). In the present invention, the semiconductor wafer 30C manufactured as described above is attached to the dicing die bond film X instead of the semiconductor wafer 30A, and then the steps described above with reference to FIGS. 3 to 7 are performed. good too.

11(a) and 11(b) show the first expansion process (cool expansion process) performed after the semiconductor wafer 30C is bonded to the dicing die-bonding film X. FIG. In this step, a hollow columnar push-up member 43 provided in the expanding device is lifted in contact with the dicing tape 10 on the lower side of the dicing die-bonding film X in the drawing, and the dicing die-bonding film X bonded to the semiconductor wafer 30C is diced. The tape 10 is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expansion is performed under the conditions that a tensile stress within the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the dicing tape 10 . The temperature condition in this step is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expansion speed (the speed at which the push-up member 43 rises) in this step is preferably 0.1 to 100 mm/sec. Moreover, the amount of expansion in this step is preferably 1 to 10 mm. Through such a cool expansion process, the die-bonding film 20 of the dicing die-bonding film X is cut into small pieces of the die-bonding film 21 to obtain semiconductor chips 31 with die-bonding films. Specifically, in this step, cracks are formed in the fragile modified regions 30b of the semiconductor wafer 30C, and the semiconductor chips 31 are singulated. Along with this, in this step, in the die bond film 20 that is in close contact with the adhesive layer 12 of the dicing tape 10 to be expanded, deformation is suppressed in each region where the semiconductor chips 31 of the semiconductor wafer 30C are in close contact. Then, the tensile stress generated in the dicing tape 10 acts on the portion of the wafer facing the crack formation portion in a state in which such a deformation suppressing action does not occur. As a result, the part of the die-bonding film 20 facing the crack formation part between the semiconductor chips 31 is cut.

In addition, in the present invention, the dicing die-bonding film X can be used to obtain a semiconductor chip with a die-bonding film as described above. It can also be used to obtain semiconductor chips. Between the semiconductor chips 31 in such three-dimensional mounting, a spacer may be interposed together with the die-bonding film 21, or no spacer may be interposed.

In the expanding step using a dicing die-bonding film to obtain a semiconductor chip with a die-bonding film, the tensile stress generated in the dicing tape expanded by the dicing die-bonding film is 15 MPa or more and 32 MPa or less. Residual stress acting on the die-bonding film after cleaving from the dicing tape after expansion is suitable for cleaving the die-bonding film by applying a tensile stress as a sufficient cleaving force to the die-bonding film from the dicing tape. The inventors of the present invention have found that it is suitable for preventing the film or the film-attached semiconductor chip from being lifted or peeled off from the dicing tape by avoiding an excessive increase in . For example, it is as shown in Examples and Comparative Examples below. In the above-described first expansion step, that is, the cool expansion step, of the semiconductor device manufacturing method according to the present invention, the semiconductor wafer divisions 30B or the semiconductor wafers 30A are attached to the die bond film 20 side by the dicing die bond film X on the dicing tape 10. The dicing tape 10 is expanded under the condition that a tensile stress within the range of 32 MPa is generated. This method of manufacturing a semiconductor device including such an expanding step allows the die-bonding film 20 on the dicing tape 10 to be cleaved satisfactorily, and suppresses lifting and peeling of each semiconductor chip 31 with the die-bonding film from the dicing tape 10 after being cleaved. suitable for

In the above-described cool-expanding step (first expanding step), the lower the temperature condition, the greater the tensile stress generated in the dicing tape 10. The temperature condition in the cool-expanding step is as described above, for example, It is 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, more preferably -15°C. According to such a configuration, the die-bonding film in the cool-expanding step (first expanding step) for breaking a relatively large tensile stress generated under relatively low-temperature conditions for the dicing tape 10 expanded in the cool-expanding step. 20, the second expanding step for extending the separation distance of the semiconductor chip 31 with the die-bonding film after breaking is performed under relatively high temperature (for example, room temperature) conditions to suppress the tensile stress generated by the dicing tape. It is possible to do it while

The dicing tape 10 in the dicing die-bonding film X used in the above-described semiconductor device manufacturing method has a strain value of 5% or more, which is suitable for securing a sufficient tensile length for causing the die-bonding film 20 to break. , at least a portion of the strain value in the range of 30% or less suitable for efficient performance of the expanding process by avoiding excessive stretch lengths in the expanding process, as described above, It can exhibit a tensile stress in the range of 15-32 MPa. Such a dicing tape 10 is subjected to an expansion process (the above-mentioned cool expansion process ), therefore, the die-bonding film 20 on the dicing tape 10 is cleaved well in the expanding step, and the semiconductor chips 31 with the die-bonding film after cleaved are prevented from floating or peeling from the dicing tape 10. Suitable for suppression.

As described above, the dicing tape 10 has a strain value of 5% or more, preferably 6% or more, more preferably 7% or more, and more preferably 8% or more in the tensile test, and 30% or less, It can exhibit a tensile stress in the range of 15-32 MPa, preferably in the range of 20% or less, more preferably 17% or less, more preferably 15% or less, more preferably 13% or less. When such a dicing tape 10 is used in an expanding step in a form in which the die-bonding film 20 is adhered to the adhesive layer 12 side, the pulling length becomes excessive while securing a sufficient pulling length. It is suitable for producing a tensile stress within the range of 15-32 MPa while avoiding

The tensile stress that the dicing tape 10 can exhibit in the above tensile test is preferably in the range of 20 to 32 MPa, as described above. Such a dicing tape 10 is subjected to an expansion process (the above-mentioned cool expansion process ) is suitable for use in In the expanding step, as the tensile stress generated in the dicing tape 10 expanded by the dicing die-bonding film X exceeds 15 MPa, the tensile stress that acts as a breaking force from the dicing tape 10 during expansion to the die-bonding film 20. tends to be large.

In the tensile test on the dicing tape 10, the lower the temperature condition, the greater the tensile stress exhibited by the dicing tape 10 or its test piece. , more preferably -20 to -5°C, more preferably -15 to -5°C, more preferably -15°C. According to such a configuration, a relatively large tensile stress generated in the expanded dicing tape 10 under relatively low temperature conditions is used as a breaking force for the die bond film 20 in cool expansion for breaking (first expansion step). After using, the second expansion step (second expansion step) for extending the separation distance of the semiconductor chip 31 with the die-bonding film after cutting is performed under a relatively high temperature (for example, room temperature) condition to reduce the tensile stress generated by the dicing tape. It is possible to do so with restraint.

The tensile speed conditions in the tensile test for the dicing tape 10 are preferably 10 to 1000 mm/min, more preferably 100 to 1000 mm/min, as described above. When the dicing tape 10 is used in the expanding process with the die bond film 20 adhered to the adhesive layer 12 side, from the viewpoint of the process speed and thus the productivity of the semiconductor device, the dicing tape 10 has a predetermined strain value. The tensile speed condition of the tensile test that produces a tensile stress within the range of 15 to 32 MPa is preferably 10 mm/min or more, more preferably 100 mm/min or more. From the viewpoint of avoiding breakage when the dicing tape 10 is used in the expanding step with the die bond film 20 adhered to the adhesive layer 12 side, the dicing tape 10 has a predetermined strain value of 15 to 32 MPa. is preferably 1000 mm/min or less, more preferably 300 mm/min or less.

[Example 1]
<Preparation of dicing tape>
100 parts by mass of 2-ethylhexyl acrylate, 19 parts by mass of 2-hydroxyethyl acrylate, and peroxide as a polymerization initiator were placed in a reaction vessel equipped with a cooling tube, a nitrogen inlet tube, a thermometer, and a stirring device. A mixture containing 0.4 parts by mass of benzoyl and 80 parts by mass of toluene as a polymerization solvent was stirred at 60° C. for 10 hours under a nitrogen atmosphere (polymerization reaction). As a result, a polymer solution containing the acrylic polymer P1 was obtained. Next, after adding 1.2 parts by mass of 2-methacryloyloxyethyl isocyanate to this polymer solution, the solution was stirred under an air atmosphere at 50° C. for 60 hours (addition reaction). As a result, a polymer solution containing the acrylic polymer P2 was obtained. Next, to this polymer solution, 1.3 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Nippon Polyurethane Co., Ltd.) per 100 parts by mass of acrylic polymer P2, and 3 parts by mass of photopolymerization. An initiator (trade name “Irgacure 184”, manufactured by BASF) was added to prepare an adhesive solution (adhesive solution S1). Next, the pressure-sensitive adhesive solution S1 was applied to the silicone-treated surface of the PET release liner having the silicone-treated surface to form a coating film, and the coating film was heated at 120° C. for 2 minutes to remove the solvent. , to form an adhesive layer having a thickness of 10 μm. Next, a polyvinyl chloride substrate (trade name “V9K”, thickness 100 μm, manufactured by Achilles Co., Ltd.) is attached to the exposed surface of the adhesive layer, then stored at 23° C. for 72 hours, and diced. got the tape. As described above, a dicing tape of Example 1 having a laminated structure including a substrate and an adhesive layer was produced.

[Example 2]
A polyolefin base material having a three-layer structure of polypropylene film/polyethylene film/polypropylene film (trade name “DDZ”, thickness 90 μm, manufactured by Gunze Co., Ltd.) was coated with a polyvinyl chloride base material (trade name “V9K”, Achilles Co., Ltd.). A dicing tape of Example 2 was produced in the same manner as in Example 1, except that the dicing tape of Example 2 was used instead.

[Comparative Example 1]
Except for using an ethylene-vinyl acetate copolymer base material (trade name "NED", thickness 125 μm, manufactured by Gunze Co., Ltd.) in place of the polyvinyl chloride base material (trade name "V9K", manufactured by Achilles Co., Ltd.) A dicing tape of Comparative Example 1 was produced in the same manner as in Example 1.

[Comparative Example 2]
Except for using an ethylene-vinyl acetate copolymer base material (trade name "RB0104", thickness 130 μm, manufactured by Kurashiki Boseki Co., Ltd.) instead of a polyvinyl chloride base material (trade name "V9K", manufactured by Achilles Co., Ltd.) A dicing tape of Comparative Example 2 was produced in the same manner as in Example 1.

[Example 3]
<Production of die bond film>
Acrylic resin (trade name “SG-708-6”, glass transition temperature (Tg) 4 ° C., manufactured by Nagase ChemteX Corporation) 100 parts by mass, epoxy resin (trade name “JER828”, liquid at 23 ° C., Mitsubishi Chemical Co., Ltd.) 11 parts by mass, phenol resin (trade name “MEH-7851ss”, solid at 23 ° C., manufactured by Meiwa Kasei Co., Ltd.) 5 parts by mass, spherical silica (trade name “SO-25R”, AD Co., Ltd.) (manufactured by Matex Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition solution S2 having a solid content concentration of 20% by mass. Next, the adhesive composition solution S2 is applied onto the silicone-treated surface of the PET release liner having the silicone-treated surface to form a coating film, and the coating film is removed by heating at 130° C. for 2 minutes. A solvent was applied to prepare a die-bonding film (thickness: 10 μm) as an adhesive layer.

<Production of dicing die bond film>
After peeling off the PET release liner from the dicing tape of Example 1, the above-described die-bonding film was attached to the exposed pressure-sensitive adhesive layer. In bonding, the center of the dicing tape and the center of the die-bonding film were aligned. A hand roller was used for the lamination. Next, the pressure-sensitive adhesive layer of the dicing tape was irradiated with ultraviolet rays of 300 mJ/cm ² from the substrate side. As described above, a dicing die-bonding film of Example 3 having a laminated structure including a dicing tape and a die-bonding film was produced.

[Example 4]
A dicing die-bonding film of Example 4 was produced in the same manner as in Example 3, except that the dicing tape of Example 2 was used instead of the dicing tape of Example 1.

[Comparative Examples 3 and 4]
Dicing die-bonding films of Comparative Examples 3 and 4 were produced in the same manner as in Example 3 except that the dicing tape of Comparative Example 1 or Comparative Example 2 was used instead of the dicing tape of Example 1.

[Tensile stress measurement]
For each dicing tape of Examples 1 and 2 and Comparative Examples 1 and 2, tensile stress was measured as follows. First, after curing the adhesive layer by irradiating the adhesive layer of the dicing tape with ultraviolet rays of 300 mJ/cm ² from the base material side, the dicing tape test piece (width 20 mm × length 140 mm) was cut out. A required number of dicing tape test pieces were prepared for each of the dicing tapes of Examples 1 and 2 and Comparative Examples 1 and 2. Then, using a tensile tester (trade name "Autograph AGS-50NX", manufactured by Shimadzu Corporation), the dicing tape test piece was subjected to a tensile test, and the dicing tape test piece stretched at a predetermined tensile speed. The resulting tensile stress was measured. A stress-strain curve was obtained from this measurement. In the tensile test, the initial chuck-to-chuck distance is 100 mm, the temperature condition is -15°C, and the tensile speed is 10 mm/min, 100 mm/min, or 1000 mm/min. The stress-strain curves obtained for each dicing tape specimen are presented in FIG. In the graph of FIG. 12, the horizontal axis represents the strain (%) of the dicing tape test piece, and the vertical axis represents the tensile stress (MPa) generated in the dicing tape test piece. In the graph of FIG. 12, the solid line E1 represents the stress-strain curve of the dicing tape of Example 1 at a tensile speed of 10 mm/min, and the dashed-dotted line E1' represents the dicing tape of Example 1 at a tensile speed of 100 mm/min. The dashed line E1″ represents the stress-strain curve of the dicing tape of Example 1 at a tensile speed of 1000 mm/min, and the solid line E2 represents the stress-strain curve of the dicing tape of Example 2 at a tensile speed of 10 mm/min. The dashed-dotted line E2' represents the stress-strain curve at a tensile speed of 100 mm/min in the dicing tape of Example 2, and the dashed line E2'' represents the tensile speed in the dicing tape of Example 2. The stress-strain curve at 1000 mm / min, the solid line C1 represents the stress-strain curve at a tensile speed of 10 mm / min in the dicing tape of Comparative Example 1, and the dashed-dotted line C1 'in the dicing tape of Comparative Example 1. The stress-strain curve at a tensile speed of 100 mm / min, the dashed line C1 ″ represents the stress-strain curve at a tensile speed of 1000 mm / min in the dicing tape of Comparative Example 1, and the solid line C2 is the dicing tape of Comparative Example 2. The stress-strain curve at a tensile speed of 10 mm / min in the dicing tape of Comparative Example 2 represents the stress-strain curve at a tensile speed of 100 mm / min. shows a stress-strain curve at a tensile speed of 1000 mm/min in a dicing tape of .

[Elastic modulus measurement]
The tensile elastic modulus of each dicing tape of Examples 1 and 2 and Comparative Examples 1 and 2 was measured as follows. First, after curing the adhesive layer by irradiating the adhesive layer of the dicing tape with ultraviolet rays of 300 mJ/cm ² from the base material side, the dicing tape test piece (width 20 mm × length 140 mm) was cut out. A required number of dicing tape test pieces were prepared for each of the dicing tapes of Examples 1 and 2 and Comparative Examples 1 and 2. Then, using a tensile tester (trade name "Autograph AGS-50NX", manufactured by Shimadzu Corporation), a tensile test is performed on the dicing tape test piece, and the resulting stress-initial slope of the strain curve (specifically , the tensile modulus was calculated from the slope determined based on the measurement data up to a strain value of 1% after the start of the tensile test). In the tensile test, the initial chuck-to-chuck distance is 100 mm, the temperature condition is -15°C, and the tensile speed is 10 mm/min, 100 mm/min, or 1000 mm/min. Table 1 lists the tensile modulus obtained by such measurements.

[Evaluation of expanding process]
Using the dicing die-bonding films of Examples 3 and 4 and Comparative Examples 3 and 4, the following lamination process and subsequent cool expansion process were performed.

In the bonding step, a semiconductor wafer division held by a wafer processing tape (trade name "ELP UB-3083D", manufactured by Nitto Denko Corporation) is bonded to a die bond film of a dicing die bond film, and then the semiconductor wafer is bonded. The wafer processing tape was peeled off from the divided body. The semiconductor wafer division body is manufactured by forming as follows. First, a Si mirror wafer (300 mm in diameter, 780 μm in thickness, manufactured by Tokyo Kako Co., Ltd.) held together with a ring frame on a wafer processing tape (trade name “V12S-R2” manufactured by Nitto Denko Co., Ltd.) was Dividing grooves (width 20 to 25 μm, depth 50 μm) for singulation were formed from one surface side by a rotating blade of a dicing machine (trade name “DFD6361”, manufactured by Disco Co., Ltd.). . Next, after bonding a wafer processing tape (trade name: "ELP UB-3083D", manufactured by Nitto Denko Co., Ltd.) to the dividing groove formation surface, the above wafer processing tape (trade name: "V12S-R2") was applied. It was separated from the Si mirror wafer. Thereafter, the Si mirror wafer was thinned to a thickness of 20 μm by grinding from the other side (the side on which the dividing grooves were not formed). As described above, semiconductor wafer divisions (in a state of being held by the wafer processing tape) were formed. This semiconductor wafer division includes a plurality of semiconductor chips (6 mm×12 mm).

The cool-expanding step was carried out in the cool-expanding unit using a die separator (trade name: "Die Separator DDS2300", manufactured by Disco). Specifically, after affixing the ring frame on the adhesive layer of the dicing tape in the dicing die-bonding film with the semiconductor wafer segment, the dicing die-bonding film is set in the device, and the cool expansion unit of the same device. , the dicing tape of the dicing die-bonding film accompanied by the semiconductor wafer division was expanded at a temperature of -15°C under conditions of a predetermined expansion speed and a predetermined expansion amount. The cool expansion process performed using each of the dicing die-bonding films of Examples 3 and 4 and Comparative Examples 3 and 4 is as follows.

The dicing tape of the dicing die bond film of Example 3 with the above semiconductor wafer divisions on the die bond film was expanded under the conditions of an expansion speed of 0.5 mm / sec and an expansion amount of 3 mm. The portion where the die-bonding film was to be cut was cut over the entire area, and the semiconductor chip with the die-bonding film after cutting did not lift from the pressure-sensitive adhesive layer of the dicing tape. The tensile stress generated in the dicing tape (the dicing tape of Example 1) expanded under the conditions of an expansion speed of 0.5 mm/sec, an expansion amount of 3 mm, and -15°C in this cool expansion process is It corresponds to the tensile stress generated in the dicing tape with a strain value of 12% when the above tensile test is performed at a temperature of -15°C and a tensile speed of 50 mm/min.

When the dicing tape of the dicing die bond film of Example 3 with the above semiconductor wafer divisions on the die bond film was expanded under the conditions of an expansion speed of 1 mm / sec and an expansion amount of 3 mm, the die bond film along the division groove of the semiconductor wafer divisions The portion to be cut was cut over the entire area, and about 20% of the area of the die-bonding film after cutting was lifted from the pressure-sensitive adhesive layer of the dicing tape. The tensile stress generated in the dicing tape (the dicing tape of Example 1) expanded under the conditions of an expansion speed of 1 mm/sec, an expansion amount of 3 mm, and -15°C in this cool expansion process was -15 for the dicing tape of Example 1. It corresponds to the tensile stress generated in the dicing tape with a strain value of 12% at a tensile speed of 100 mm/min in the tensile test performed at a temperature of 100°C.

When the dicing tape of the dicing die bond film of Example 4 with the above semiconductor wafer divisions on the die bond film was expanded under the conditions of an expansion speed of 1 mm / sec and an expansion amount of 4 mm, the die bond film along the division groove of the semiconductor wafer divisions The portion to be cut was cut over the entire area, and the die-bonding film after cutting did not lift from the pressure-sensitive adhesive layer of the dicing tape. The tensile stress generated in the dicing tape (the dicing tape of Example 2) expanded under the conditions of an expansion speed of 1 mm/sec, an expansion amount of 4 mm, and -15°C in this cool expansion step was -15 for the dicing tape of Example 2. It corresponds to the tensile stress generated in the dicing tape with a strain value of 14% at a tensile speed of 100 mm/min in the tensile test performed at a temperature of 100°C.

When the dicing tape of the dicing die bond film of Example 4 with the above semiconductor wafer divisions on the die bond film was expanded under the conditions of an expansion speed of 1 mm / sec and an expansion amount of 8 mm, the die bond film along the division groove of the semiconductor wafer divisions The portion to be cut was cut over the entire area, and the die-bonding film after cutting did not lift from the pressure-sensitive adhesive layer of the dicing tape. The tensile stress generated in the dicing tape (the dicing tape of Example 2) expanded under the conditions of an expansion speed of 1 mm/sec, an expansion amount of 8 mm, and -15°C in this cool expansion step was -15 for the dicing tape of Example 2. It corresponds to the tensile stress generated in the dicing tape with a strain value of 28% at a tensile speed of 100 mm/min in the tensile test performed at a temperature of 100°C.

The dicing tape of the dicing die bond film of Comparative Example 3 with the above semiconductor wafer divisions on the die bond film was expanded under the conditions of an expansion speed of 1 mm / sec and an expansion amount of 3 mm. Approximately 80% of the portions to be cut were not cut. The tensile stress generated in the dicing tape (the dicing tape of Comparative Example 1) expanded under the conditions of an expansion speed of 1 mm/sec, an expansion amount of 3 mm, and -15°C in this cool expansion process was -15 for the dicing tape of Comparative Example 1. It corresponds to the tensile stress generated in the dicing tape with a strain value of 12% at a tensile speed of 100 mm/min in the tensile test performed at a temperature of 100°C.

The dicing tape of the dicing die bond film of Comparative Example 4 with the above semiconductor wafer divisions on the die bond film was expanded under the conditions of an expansion speed of 1 mm / sec and an expansion amount of 4 mm. About 20% of the portions to be cut were not cut. The tensile stress generated in the dicing tape (the dicing tape of Comparative Example 2) expanded under the conditions of an expansion speed of 1 mm/sec, an expansion amount of 4 mm, and -15°C in this cool expansion step was -15 for the dicing tape of Comparative Example 2. It corresponds to the tensile stress generated in the dicing tape with a strain value of 14% at a tensile speed of 100 mm/min in the tensile test performed at a temperature of 100°C.

X dicing die bond film 10 dicing tape 11 base material 12 adhesive layers 20, 21 die bond film W, 30A, 30C semiconductor wafer 30B semiconductor wafer division 30a division groove 30b modified region 31 semiconductor chip

Claims (6)

Having a laminated structure including a substrate and an adhesive layer,
In a tensile test performed on a dicing tape test piece with a width of 20 mm at an initial chuck-to-chuck distance of 100 mm, the tensile modulus is 500 MPa or more, and at least a part of the strain value in the range of 5 to 30% is within the range of 15 to 32 MPa. A dicing tape capable of exhibiting tensile stress , wherein the temperature condition in the tensile test is −15° C., and the tensile speed condition in the tensile test is in the range of 10 to 1000 mm/min . 2. The dicing tape according to claim 1, which can exhibit a tensile stress in the range of 15 to 32 MPa at a strain value in the range of 5 to 20% in the tensile test. 3. The dicing tape according to claim 1, wherein said tensile stress is 20-32 MPa. A dicing tape according to any one of claims 1 to 3 ;
and a die-bonding film on the pressure-sensitive adhesive layer of the dicing tape. According to any one of claims 1 to 3 A semiconductor wafer that can be singulated into a plurality of semiconductor chips, or a plurality of semiconductor chips, on the side of the die-bonding film in the dicing die-bonding film comprising a dicing tape and a die-bonding film on the adhesive layer of the dicing tape a first step for bonding semiconductor wafer divisions containing
a second step for breaking the die bond film to obtain a semiconductor chip with a die bond film by expanding the dicing tape under conditions in which a tensile stress within the range of 15 to 32 MPa is generated in the dicing tape. Semiconductor device manufacturing method. 6. The method of manufacturing a semiconductor device according to claim 5 , wherein the temperature condition in said second step is 0[deg.] C. or less.

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