KR20180116750A - Dicing die bond film - Google Patents

Abstract

Provided is a dicing die bond film, suitable for realizing good pickup of a semiconductor chip with an adhesive layer from dicing tape. According to the present invention, a dicing die bond film X has dicing tape (10) and an adhesive layer (20). The dicing tape (10) has a laminated structure including a base (11) and an adhesive layer (12). The adhesive layer (20) comes in close contact with an adhesion layer (12) for exfoliation. Moreover, the surface (12a) of the adhesion layer (12) and the surface (20b) of the adhesive layer (20), for forming an interface between the adhesion layer (12) and the adhesive layer (20), can generate a surface free energy difference of 3.5 Mj/m^2.

Description

DICING DIE BOND FILM [0002]

The present invention relates to a dicing die-bonding film which can be used in the process of manufacturing a semiconductor device.

In the manufacturing process of a semiconductor device, a dicing die-bonding film may be used to obtain a semiconductor chip accompanied by an adhesive film of a size equivalent to a die bonding chip, that is, a semiconductor chip with an adhesive layer for die bonding. The dicing die-bonding film has a size corresponding to that of a semiconductor wafer to be processed and has a dicing tape composed of, for example, a base material and a pressure-sensitive adhesive layer, and a die-bonding film (adhesive layer) adhered to the pressure- .

As a method of obtaining a semiconductor chip with an adhesive layer using a dicing die-bonding film, there is known a method of exposing a dicing tape on a dicing die-bonding film to a step of cutting the die-bonding film. In this method, first, a semiconductor wafer is bonded onto a die-bonding film of a dicing die-bonding film. This semiconductor wafer is, for example, processed in such a manner that it can be separated into a plurality of semiconductor chips after being separated in accordance with the cutting edge of the die bond film. Next, an expanding device is used to cut the die-bonding film so that a plurality of adhesive film pieces (adhesive layer) each adhering to the semiconductor chip are generated from the die-bonding film on the dicing tape, The dicing tape of the film is expanded (expanding step for cutting). In the expanding process, a cutoff occurs in the semiconductor wafer on the die-bonding film at a position corresponding to the cut-off point in the die-bonding film, and the semiconductor wafer is repositioned into a plurality of semiconductor chips on the dicing die- . Next, in order to extend the distance between the semiconductor chips with a plurality of adhesive layers after the cutting on the dicing tape, the expanding process is performed again (spacing expansing process). Subsequently, for example, after the cleaning process, each semiconductor chip with the adhesive layer on the dicing tape is pushed up from the lower side of the dicing tape by the pin member of the pickup mechanism, (Pickup process). At this time, it is necessary that the adhesive layer in the semiconductor chip with an adhesive layer to be picked up is properly peeled off from the pressure-sensitive adhesive layer of the dicing tape. As described above, a semiconductor chip accompanied by a die-bonding film or adhesive layer is obtained. The semiconductor chip with the adhesive layer is fixed to an adherend such as a mounting substrate by die bonding through the adhesive layer. For example, a technique relating to a dicing die-bonding film used as described above is described in, for example, Patent Documents 1 to 3 below.

Japanese Patent Laid-Open No. 2007-2173 Japanese Patent Application Laid-Open No. 2010-177401 Japanese Patent Application Laid-Open Publication No. 2012-23161

14 is a schematic cross-sectional view showing a dicing die-bonding film Y, which is an example of a dicing die-bonding film. The dicing die-bonding film Y is composed of a dicing tape 60 and a die-bonding film 70. The dicing tape 60 has a laminated structure of a base material 61 and a pressure-sensitive adhesive layer 62 exhibiting adhesive force. The die-bonding film 70 is in close contact with the pressure-sensitive adhesive layer 62 due to the adhesive force of the pressure-sensitive adhesive layer 62. Such a dicing die-bonding film Y has a disk shape corresponding to the object to be processed, that is, a semiconductor wafer, which is a work in the process of manufacturing a semiconductor device, and can be used in the above-described expanding process. The semiconductor wafer 81 is bonded to the die bond film 70 and the ring frame 82 is adhered to the pressure sensitive adhesive layer 62 as shown in Fig. . The ring frame 82 is a frame member that is mechanically abutted against the dicing die-bonding film Y by a transport mechanism such as a transport arm provided in the expanding apparatus. The dicing die-bonding film Y is designed such that the ring frame 82 can be fixed to the film by the adhesive force of the pressure-sensitive adhesive layer 62 of the dicing tape 60. That is, the dicing die-bonding film Y has the conventional type design in which the area for attaching the ring frame member is secured around the die-bonding film 70 in the pressure-sensitive adhesive layer 62 of the dicing tape 60. In such a design, the distance between the outer peripheral edge portion 62e of the pressure-sensitive adhesive layer 62 and the outer peripheral edge portion 70e of the die-bonding film 70 in the in-plane direction of the film is about 10 to 30 mm.

On the other hand, in the dicing die-bonding film having the dicing tape and the die-bonding film on the pressure-sensitive adhesive layer, the dicing tape or its adhesive layer and the die-bonding film have the same design dimensions in the film plane direction , The die bond film needs to take charge of the ring frame holding function, and therefore it is necessary to secure the adhesive force to the ring frame. The die-bonding film is made to be, for example, low-carbonating more than the die-bonding film 70 in the above-described dicing die-bonding film Y in order to secure the adhesive force of the die- However, this low-carbonization tends to increase the peeling force required for peeling the die-bonding film from the pressure-sensitive adhesive layer of the dicing tape. In order to realize a good pickup of the semiconductor chip with an adhesive layer in the pickup process described above, the peeling force between the pressure-sensitive adhesive layer of the dicing tape and the die-bonding film is preferably small.

As described above, in the dicing die-bonding film, technical difficulties may be involved in realizing a good pickup of a semiconductor chip with an adhesive layer from a dicing tape. The present invention has been devised on the basis of these circumstances, and an object thereof is to provide a dicing die-bonding film suitable for realizing a good pickup of a semiconductor chip with an adhesive layer from a dicing tape.

The dicing die-bonding film provided by the present invention comprises a dicing tape and an adhesive layer. The dicing tape has a laminated structure including a substrate and a pressure-sensitive adhesive layer. The adhesive layer is adhered to the pressure-sensitive adhesive layer of the dicing tape in a peelable manner. The surface of the adhesive layer and the surface of the pressure-sensitive adhesive layer for forming the interface between the dicing tape pressure-sensitive adhesive layer and the adhesive layer thereon can generate a surface free energy difference of 3.5 mJ / m 2 or more. That is, the surface free energy (first surface free energy) of the surface of the adhesive layer and the surface free energy (second surface free energy) of the surface of the pressure-sensitive adhesive layer on the surface of the adhesive layer and the surface of the pressure- Is at least 3.5 mJ / m < 2 > or at least 3.5 mJ / m < 2 >, the present dicing die-bonding film is provided. For example, when the pressure sensitive adhesive layer of the dicing tape is a curable pressure sensitive adhesive layer such as a radiation curable pressure sensitive adhesive layer, the difference between the first surface free energy in the adhesive layer and the second surface free energy in the pressure sensitive adhesive layer after curing is 3.5 mJ / Lt; 2 > or more, the present dicing die-bonding film is constituted. Further, in the present invention, the surface free energy difference described above is preferably 4 mJ / m 2 or more, and more preferably 5 mJ / m 2 or more. The dicing die-bonding film having the above-described structure can be used to obtain a semiconductor chip with an adhesive layer in the process of manufacturing a semiconductor device.

In the manufacturing process of the semiconductor device, as described above, the expanding process or the pick-up process in which the dicing die-bonding film is used may be performed to obtain the semiconductor chip with the adhesive layer. In the pick-up step, it is necessary that the adhesive layer in the semiconductor chip with an adhesive layer is peeled off from the pressure-sensitive adhesive layer of the dicing tape so that the semiconductor chip can be picked up from the dicing tape. The difference between the first and second surface free energies at the interface between the adhesive layer of the dicing die-bonding film and the dicing tape pressure-sensitive adhesive layer is 3.5 mJ / m 2 or more, preferably 4 mJ / m 2 or more, more preferably 5 mJ / / M < 2 > is suitable for realizing a good pickup in the pickup process. Specifically, it is as shown in the following examples and comparative examples. The greater the difference between the surface free energy of the surface of the adhesive layer and the surface free energy of the surface of the pressure-sensitive adhesive layer at the interface between the adhesive layer and the pressure-sensitive adhesive layer, the more difficult is the migration of the constituent material between these two layers. The fact that migration of the constituent material between the adhesive layer and the pressure-sensitive adhesive layer is difficult to occur is suitable for realizing a small peeling force between both layers. In the case where the adhesive layer is to be low-carbonized, for example, It is suitable for suppressing an increase in the peeling force between the adhesive layer and the pressure-sensitive adhesive layer while securing the adhesion of the adhesive layer to the frame member by the heat. The above-described configuration in which the difference between the first and second surface free energy along the interface between the adhesive layer and the pressure-sensitive adhesive layer is 3.5 mJ / m 2 or more, preferably 4 mJ / m 2 or more, more preferably 5 mJ / It is suitable for securing a small peeling force between the pressure-sensitive adhesive layer and the adhesive layer to such an extent that a good pickup of the semiconductor chip with adhesive layer can be realized.

The present dicing die-bonding film suitable for suppressing an increase in the peeling force between the adhesive layer and the dicing tape pressure-sensitive adhesive layer while ensuring adhesion of the adhesive layer to the frame member, The dicing tape or its adhesive layer and the adhesive layer thereon are designed to have substantially the same dimension in the in-plane direction of the film so as to include the area for bonding the frame member in addition to the area for work adhesion. In the present dicing die-bonding film, for example, the outer peripheral end portion of the adhesive layer in the in-plane direction of the film is designed to be located at a distance of not more than 1000 m from each outer peripheral end of the substrate of the dicing tape and the pressure- It is possible. The dicing die-bonding film having such a constitution can be produced by a process for forming one dicing tape having a laminated structure of a substrate and a pressure-sensitive adhesive layer and a process for forming one adhesive layer by a process such as one punching process Which is suitable for carrying out collectively.

In the manufacturing process of the above-described dicing die-bonding film Y, a processing step (first processing step) for forming a dicing tape 60 having a predetermined size and shape and a die bonding film 70 (Second processing step) is required as a separate step. In the first processing step, for example, a laminated sheet having a laminated structure of a predetermined separator, a base layer to be formed of the base material 61, and a pressure-sensitive adhesive layer to be formed of the pressure-sensitive adhesive layer 62, Processing is carried out for the sieve body from the side of the substrate layer to the separator. The pressure-sensitive adhesive layer to be formed of the pressure-sensitive adhesive layer (62) is formed by applying the pressure-sensitive adhesive composition on the separator and subsequent drying. A dicing tape 60 having a laminated structure of the pressure-sensitive adhesive layer 62 and the base material 61 on the separator is formed on the separator by the first processing step. In the second processing step, for example, for a laminated sheet body having a laminated structure of a predetermined separator and an adhesive layer to be formed of the die-bonding film 70, a processing blade is provided from the side of the adhesive layer to the separator So that the work is carried out. The adhesive layer to be formed on the die-bonding film 70 is formed by applying the adhesive composition on the separator and then drying it. The die bonding film 70 is formed on the separator by the second processing step. The dicing tape 60 and the die-bonding film 70 formed in such a separate process are then bonded while being aligned. 16 shows a dicing die-bonding film Y carrying a separator 83 covering the surface of the die-bonding film 70 and the surface of the pressure-sensitive adhesive layer 62. Fig.

On the contrary, the dicing die-bonding film of the present invention in the case where the dicing tape or its adhesive layer and the adhesive layer as the die-bonding film thereon have substantially the same design dimension in the in-plane direction of the film, And the like. First, an adhesive composition layer is formed on a predetermined separator by application of a composition for forming an adhesive layer. Subsequently, a pressure-sensitive adhesive composition layer is formed on the adhesive composition layer by application of a composition for forming a dicing tape pressure-sensitive adhesive layer. Subsequently, these composition layers are collectively dried to form an adhesive layer and a pressure-sensitive adhesive layer on the separator. Subsequently, the substrate for a dicing tape is bonded to the exposed surface of the pressure-sensitive adhesive layer. Subsequently, the laminated sheet body having the laminate structure of the separator, the adhesive layer, the pressure-sensitive adhesive layer and the base material is subjected to a process of rushing the processing blade from the base side to the separator. Thereby, a dicing die-bonding film of a predetermined size and shape having a laminated structure of an adhesive layer, a pressure-sensitive adhesive layer and a base material on the separator is formed on the separator. The dicing die-bonding film of the present invention in the case where the dicing tape or its adhesive layer and the adhesive layer thereon have substantially the same design dimensions in the in-plane direction of the film, The processing for forming the dicing tape and the processing for forming one adhesive layer are carried out collectively by processing such as one punching process. Such a main dicing die-bonding film is suitable for production efficiently in terms of reduction in the number of manufacturing steps and suppression of manufacturing cost. Further, in the above-described manufacturing method in which the lamination of the composition for forming an adhesive layer and the composition for forming a dicing tape pressure-sensitive adhesive layer and the simultaneous drying of both composition layers are performed after the dicing tape pressure-sensitive adhesive layer and the adhesive layer are separately formed It is easy to cause an increase in the peeling force between both layers at the interface between the dicing tape pressure-sensitive adhesive layer and the adhesive layer. However, it is preferable that the pressure of the first and second surface free energy The above-described structure of the present invention in which the difference is not less than 3.5 mJ / m 2, preferably not less than 4 mJ / m 2 and more preferably not less than 5 mJ / m 2 as described above realizes good pickup of the semiconductor chip with adhesive layer in the pickup process It is suitable to secure a small peeling force between the pressure-sensitive adhesive layer and the adhesive layer to the extent possible.

As described above, the dicing die-bonding film of the present invention is suitable for realizing a good pickup of a semiconductor chip with an adhesive layer from a dicing tape.

From the viewpoint of securing the aforementioned small peeling force between the dicing tape pressure-sensitive adhesive layer and the adhesive layer of the dicing die-bonding film, the dicing tape pressure-sensitive adhesive layer is preferably provided on the surface forming the interface with the adhesive layer (Second surface free energy) of not more than 32 mJ / m 2, more preferably not more than 30 mJ / m 2, and more preferably not more than 28 mJ / m 2. When the dicing tape pressure-sensitive adhesive layer is a curable pressure sensitive adhesive layer such as a radiation curable pressure sensitive adhesive layer, the second surface free energy in the pressure sensitive adhesive layer after curing is preferably 32 mJ / m 2 or less, more preferably 30 mJ / And preferably 28 mJ / m 2 or less. From the viewpoint of ensuring adequate adhesion between the dicing tape pressure-sensitive adhesive layer and the adhesive layer during conveyance of the dicing die-bonding film or the like between the two layers, the dicing tape pressure- (Second surface free energy) of preferably not less than 15 mJ / m 2, more preferably not less than 18 mJ / m 2, and more preferably not less than 20 mJ / m 2 on the surface constituting the contact interface of the substrate have. When the dicing tape pressure-sensitive adhesive layer is a curable pressure-sensitive adhesive layer such as a radiation-curable pressure-sensitive adhesive layer, the second surface free energy in the pressure-sensitive adhesive layer after curing is preferably 15 mJ / m 2 or more, more preferably 18 mJ / More preferably at least 20 mJ / m < 2 >.

The first surface free energy in the adhesive layer of the present dicing die-bonding film is preferably 30 mJ / cm 2 from the viewpoint of ensuring the required adhesion between the adhesive layer in the dicing die-bonding film and the dicing tape pressure- M 2 or more, more preferably 31 mJ / m 2 or more, and more preferably 32 mJ / m 2 or more. From the viewpoint of ensuring the small peeling force described above between the adhesive layer and the pressure-sensitive adhesive layer, the first surface free energy is preferably 45 mJ / m 2 or less, more preferably 43 mJ / m 2 or less, Lt; 2 > / m < 2 >

The adhesive layer of the dicing die-bonding film of the present invention preferably has a thickness of 0.1 N / 10 mm or more with respect to the SUS plane in a peeling test under the conditions of 23 DEG C, a peeling angle of 180 DEG and a tensile rate of 10 mm / Preferably not less than 0.3 N / 10 mm, more preferably not less than 0.5 N / 10 mm. The constitution relating to the adhesive force of the adhesive layer is suitable for ensuring the retention of the frame member by the present dicing die-bonding film. Further, this adhesive layer exhibits a 180 deg. Peel adhesion strength, preferably 20 N / 10 mm or less, more preferably 10 N / 10 mm or less, on the SUS plane in the peeling test under the same conditions. This constitution relating to the adhesive force of the adhesive layer is suitable for ensuring the detachability of the frame member from the present dicing die-bonding film.

The adhesive layer of the dicing die-bonding film of the present invention was obtained under the conditions of an initial chuck distance of 10 mm, a frequency of 10 Hz, a dynamic strain of +/- 0.5 占 퐉 and a temperature raising rate of 5 占 폚 / min Is preferably 100 MPa or more, more preferably 500 MPa or more, and still more preferably 1000 MPa or more. This structure relating to the tensile storage elastic modulus of the adhesive layer is suitable for ensuring adhesion of the adhesive layer to the frame member and is therefore suitable for ensuring the retention of the frame member by the present dicing die-bonding film. The adhesive layer has a tensile storage modulus of elasticity of preferably 4000 MPa or less, more preferably 3,000 MPa or less, more preferably 2,000 MPa or less at 23 캜 measured under the same conditions. This constitution relating to the tensile storage modulus of the adhesive layer is suitable for ensuring the detachability of the frame member from the present dicing die-bonding film.

In the dicing die-bonding film of the present invention, the dicing tape pressure-sensitive adhesive layer is preferably a radiation-curable pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer after the radiation curing in the T-type peeling test under conditions of 23 캜 and a stripping rate of 300 mm / The peel force between the pressure-sensitive adhesive layer and the adhesive layer is preferably 0.06 N / 20 mm or more, more preferably 0.1 N / 20 mm or more, and still more preferably 0.15 N / 20 mm or more. Such a configuration is suitable for securing the adhesion between the pressure-sensitive adhesive layer after curing of the dicing tape and the adhesive layer on the pressure-sensitive adhesive layer. Therefore, in the use of the present dicing die-bonding film, In the case of carrying out the panding process, it is suitable for suppressing the occurrence of partial peeling, i.e., entanglement, from the pressure-sensitive adhesive layer of the semiconductor chip having the adhesive layer in the process. The peel strength between the pressure-sensitive adhesive layer and the adhesive layer after radiation curing in the T-type peel test under the conditions of 23 캜 and a peeling rate of 300 mm / min is preferably 0.25 N / 20 mm or less, Is 0.23 N / 20 mm or less, and more preferably 0.2 N / 20 mm or less. Such a configuration is suitable for realizing a good pickup of a semiconductor chip with an adhesive layer from a cured pressure-sensitive adhesive layer in a pick-up process performed after curing of the dicing tape pressure-sensitive adhesive layer.

In the dicing die-bonding film of the present invention, the dicing tape pressure-sensitive adhesive layer is preferably a radiation-curable pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer before the radiation curing in the T- The peeling force between the pressure-sensitive adhesive layer and the adhesive layer is preferably 2 N / 20 mm or more. Such a configuration is suitable for securing the adhesion between the uncured pressure-sensitive adhesive layer of the dicing tape and the adhesive layer on the dicing tape. Therefore, in using the present dicing die-bonding film, the pressure- It is preferable to suppress the occurrence of partial peeling, i.e., entanglement, of the semiconductor chip with an adhesive layer in the process from the pressure-sensitive adhesive layer.

The difference in arithmetic average surface roughness (Ra) between both surfaces of the pressure-sensitive adhesive layer surface and the adhesive layer surface for forming the interface between the dicing tape pressure-sensitive adhesive layer and the adhesive layer in the present dicing die-bonding film is preferably 100 nm or less . This configuration is suitable for securing the adhesion between the dicing tape pressure-sensitive adhesive layer and the adhesive layer on the dicing tape pressure-sensitive adhesive layer. Therefore, in the expanding process, partial peeling of the adhesive layer from the pressure- . ≪ / RTI >

The pressure-sensitive adhesive layer in the dicing die-bonding film of the present invention comprises a first unit derived from an alkyl (meth) acrylate having an alkyl group of 10 or more carbon atoms and a second unit derived from 2-hydroxyethyl (meth) It is preferable to contain an acrylic polymer. The term "(meth) acrylate" means "acrylate" and / or "methacrylate". The constitution in which the acrylic polymer in the pressure-sensitive adhesive layer includes a unit derived from an alkyl (meth) acrylate having an alkyl group having at least 10 carbon atoms and a unit derived from 2-hydroxyethyl (meth) It is suitable for realizing a high shear adhesive force between the adhesive layers on the adhesive layer. Therefore, a desiccating force is appropriately applied to the adhesive layer on the dicing tape which is expanded in the in-plane direction in the expanding process, It is suitable for removing layers.

In the acrylic polymer in the pressure-sensitive adhesive layer of the dicing die-bonding film of the present invention, the molar ratio of the first unit to the second unit is preferably at least 1, more preferably at least 3, 5 or more. Such a constitution is preferable in order to suppress binding interactions acting in the lamination direction between both layers while securing a high shear adhesive force between the dicing tape pressure-sensitive adhesive layer and the adhesive layer thereon as described above, This contributes to the realization of a good pickup in the pickup process. The molar ratio is preferably 40 or less, more preferably 35 or less, and still more preferably 30 or less. Such a configuration is suitable for securing the adhesiveness between the dicing tape pressure-sensitive adhesive layer and the adhesive layer and suppressing the partial peeling, that is, the occurrence of lifting from the pressure-sensitive adhesive layer of the semiconductor chip with adhesive layer in the expanding process.

The acrylic polymer in the pressure-sensitive adhesive layer in the present dicing die-bonding film is preferably an adduct having an unsaturated functional group-containing isocyanate compound added as a radiation-polymerizable component. In this case, the molar ratio of the unsaturated functional group-containing isocyanate compound to the second unit derived from 2-hydroxyethyl (meth) acrylate in the acrylic polymer is preferably 0.1 or more, more preferably 0.2 or more, Is not less than 0.3. These constitutions are suitable for appropriately increasing the elasticity of the pressure-sensitive adhesive layer through the reaction between the acrylic polymer and the unsaturated functional group-containing isocyanate compound, and contributes to good decoupling of the adhesive layer in the expanding process. From the viewpoint of reducing the low molecular weight component in the pressure-sensitive adhesive layer after curing, in the reaction composition containing an acrylic polymer and an unsaturated functional group-containing isocyanate compound for forming an adduct in which an isocyanate compound having an unsaturated functional group is added to an acrylic polymer, The molar ratio of the unsaturated functional group-containing isocyanate compound to the 2-hydroxyethyl (meth) acrylate-derived unit (second unit) of the polymer is preferably 2 or less, more preferably 1.5 or less, to be.

1 is a schematic cross-sectional view of a dicing die-bonding film according to an embodiment of the present invention.
Fig. 2 shows an example in which the dicing die-bonding film shown in Fig. 1 is accompanied by a separator.
Fig. 3 shows an example of a manufacturing method of the dicing die-bonding film shown in Fig.
Fig. 4 shows a part of the steps in the semiconductor device manufacturing method in which the dicing die-bonding film shown in Fig. 1 is used.
Fig. 5 shows a subsequent process of the process shown in Fig.
Fig. 6 shows a subsequent process of the process shown in Fig.
Fig. 7 shows a subsequent process of the process shown in Fig.
Fig. 8 shows a subsequent process of the process shown in Fig.
Fig. 9 shows a subsequent process of the process shown in Fig.
Fig. 10 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in Fig. 1 is used.
Fig. 11 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in Fig. 1 is used.
Fig. 12 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in Fig. 1 is used.
Fig. 13 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in Fig. 1 is used.
14 is a schematic cross-sectional view of a conventional dicing die-bonding film.
Fig. 15 shows a use form of the dicing die-bonding film shown in Fig.
Fig. 16 shows one form of supply of the dicing die-bonding film shown in Fig.

1 is a cross-sectional schematic diagram of a dicing die-bonding film X according to an embodiment of the present invention. The dicing die-bonding film X can be used in an expanding process as in the later stage, for example, in the process of obtaining a semiconductor chip with an adhesive layer in the production of a semiconductor device, and the dicing tape 10 and the adhesive layer 20). The dicing die-bonding film X has a disk shape corresponding to the semiconductor wafer to be processed in the manufacturing process of the semiconductor device and has a diameter within a range of, for example, 345 to 380 mm (Corresponding to an 8-inch wafer), within a range of 195 to 230 mm (corresponding to a 6-inch wafer), or within a range of 495 to 530 mm (corresponding to an 18-inch wafer) have.

In the dicing die-bonding film X, the dicing tape 10 has a laminated structure including the base material 11 and the pressure-sensitive adhesive layer 12. The pressure-sensitive adhesive layer (12) has a pressure-sensitive adhesive surface (12a) on the side of the adhesive layer (20). The adhesive layer 20 has surfaces 20a and 20b and includes a work adhesion area and a frame member adhesion area on the side of the surface 20a and further includes a pressure sensitive adhesive layer 12 of the dicing tape 10. [ And is adhered to the adhesive surface 12a in a peelable manner on the surface 20b side. The adhesive surface 12a of the pressure-sensitive adhesive layer 12 and the surface 20b of the adhesive layer 20 form the interface of both layers. The difference between the surface free energy (first surface free energy) of the surface 20b of the adhesive layer 20 and the surface free energy (second surface free energy) of the pressure sensitive adhesive surface 12a of the pressure sensitive adhesive layer 12 is 3.5 mJ M 2 or more, preferably 4 mJ / m 2 or more, more preferably 5 mJ / m 2 or more, or a structure in which the difference in surface free energy is 3.5 mJ / m 2 or more, preferably 4 mJ / m 2 or more, more preferably 5 mJ / The dicing die-bonding film X is provided. In the present invention, the surface free energy of the surface of the adhesive layer and the surface of the pressure-sensitive adhesive layer refers to water (H ₂ O) and water (H ₂ O) which come into contact with the object surface requiring identification of surface free energy under conditions of 20 ° C. and relative humidity of 65% (CH ₂ I ₂ ) using the values of the contact angles θw and θi measured by using the contact angle meter, for example, in Journal of Applied Polymer Science, vol. (=? S ^d +? S ^h ) obtained by summing? S ^d (dispersion force component of surface free energy) and? S ^h (surface bonding strength component of surface free energy) obtained by the method described in Japanese Patent Application Laid- . The method of deriving the surface free energy? S is specifically as follows for the examples.

The base material 11 of the dicing tape 10 is an element which functions as a support in the dicing tape 10 to the dicing die-bonding film X. [ As the substrate 11, for example, a plastic substrate (particularly, a plastic film) can be suitably used. Examples of the constituent material of the plastic substrate include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, Polyamide, polyphenyl sulfide, aramid, fluororesin, cellulose resin, and silicone resin. Examples of the polyolefin include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymerized polypropylene, homopolypolyrolene, polybutene, polymethylpentene, ethylene- Vinyl acetate copolymer (EVA), ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer. Examples of the polyester include polyethylene terephthalate (PET), polyethylene naphthalate and polybutylene terephthalate (PBT). The substrate 11 may be made of one kind of material or two or more kinds of materials. The base material 11 may have a single-layer structure or a multi-layer structure. When the base material 11 is made of a plastic film, it may be a non-stretched film, a monoaxially stretched film, or a biaxially stretched film. When the pressure-sensitive adhesive layer 12 on the base material 11 is ultraviolet curable as described later, the base material 11 preferably has ultraviolet transmittance.

When the dicing tape 10 to the substrate 11 are shrunk by, for example, partial heating in the process of using the dicing die-bonding film X, the substrate 11 preferably has heat shrinkability. From the standpoint of ensuring good heat shrinkability in the base material 11, the base material 11 preferably contains an ethylene-vinyl acetate copolymer as a main component. The main component of the base material 11 is a component that occupies the largest mass ratio among base component components. When the base material 11 is made of a plastic film, the base material 11 is preferably a biaxially oriented film in order to achieve isotropic heat shrinkability with respect to the dicing tape 10 to the base material 11. [ The dicing tape 10 to the substrate 11 preferably have a heat shrinkage of 2 to 30%, more preferably 2 to 25%, in a heat treatment test performed under the conditions of a heating temperature of 100 占 폚 and a heat treatment time of 60 seconds %, More preferably 3 to 20%, and still more preferably 5 to 20%. The heat shrinkage rate means at least one of the so-called heat shrinkage rate in the MD direction and the so-called heat shrinkage rate in the TD direction.

The surface of the substrate 11 on the side of the pressure-sensitive adhesive layer 12 may be subjected to a physical treatment, a chemical treatment, or a priming treatment for enhancing the adhesion with the pressure-sensitive adhesive layer 12. Examples of the physical treatment include corona treatment, plasma treatment, sand matte treatment, ozone exposure treatment, flame exposure treatment, high-pressure electric exposure treatment, and ionizing radiation treatment. The chemical treatment includes, for example, chromic acid treatment. It is preferable that the treatment for enhancing the adhesion is performed on the entire surface of the base material 11 on the pressure-sensitive adhesive layer 12 side.

The thickness of the base material 11 is preferably 40 占 퐉 or more, more preferably 40 占 퐉 or more, more preferably 40 占 퐉 or more, more preferably 40 占 퐉 or more, from the viewpoint of securing the strength for the base material 11 to function as a support in the dicing tape 10 to the dicing die- More preferably not less than 55 mu m, and more preferably not less than 60 mu m. From the viewpoint of realizing suitable flexibility in the dicing tape 10 to the dicing die-bonding film X, the thickness of the base material 11 is preferably 200 占 퐉 or less, more preferably 180 占 퐉 or less Preferably 150 mu m or less.

The pressure-sensitive adhesive layer 12 of the dicing tape 10 contains a pressure-sensitive adhesive. The pressure-sensitive adhesive may be a pressure-sensitive adhesive (pressure-sensitive adhesive force-reducing adhesive) capable of intentionally reducing the pressure-sensitive adhesive force by external action such as irradiation with radiation or heating, and may be a pressure- Non-reducing type pressure-sensitive adhesive). Whether or not to use an adhesive force reducing type pressure-sensitive adhesive as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 or to use an adhesive force-reducing pressure-sensitive adhesive is not limited to the method and conditions for discretization of a semiconductor chip to be separated by using the dicing die- Can be appropriately selected depending on the use form of the single die bond film X. [

In the case where the pressure-sensitive adhesive force-reduction type pressure-sensitive adhesive is used as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, the pressure-sensitive adhesive layer 12 exhibits a state of exhibiting relatively high adhesive force and a state of relatively low pressure- Can be used separately. For example, when the dicing die-bonding film X is used in an expanding process to be described later, the adhesive strength of the pressure-sensitive adhesive layer 12 in order to suppress or prevent lifting or peeling of the adhesive layer 20 from the pressure- In the pickup step described later for picking up the semiconductor chip with adhesive layer from the dicing tape 10 of the dicing die-bonding film X, the semiconductor chip with adhesive layer is picked up from the pressure- It is possible to use the low adhesive strength state of the pressure-sensitive adhesive layer 12 in order to make it easy to do.

Examples of such a pressure sensitive adhesives with reduced pressure include radiation curable pressure sensitive adhesives (radiation curable pressure sensitive adhesives) and heated foamed pressure sensitive adhesives. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of pressure-sensitive adhesive force-reducing adhesive may be used, or two or more types of pressure-sensitive adhesive force-reducing pressure-sensitive adhesive may be used. Further, the entirety of the pressure-sensitive adhesive layer 12 may be formed of an adhesive force-reducing type pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of an adhesive pressure- For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entirety of the pressure-sensitive adhesive layer 12 may be formed of the pressure-sensitive adhesive force-reducing type pressure-sensitive adhesive, And another portion may be formed of an adhesive force reducing type pressure-sensitive adhesive. In the case where the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers constituting the laminated structure may be formed of an adhesive force-reducing type pressure-sensitive adhesive, and some layers in the laminated structure may be formed of an adhesive force-

As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, a pressure-sensitive adhesive of the type which is cured by irradiation with an electron beam, ultraviolet ray,? Ray,? Ray,?, Or X ray can be used. Sensitive adhesive (ultraviolet curing type pressure-sensitive adhesive) can be suitably used.

As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, a pressure-sensitive adhesive containing a base polymer such as an acryl-based pressure-sensitive acrylic polymer and a radically polymerizable monomer component or oligomer component having a functional group such as a radiation- , And addition-type radiation-curable pressure-sensitive adhesives.

The acrylic polymer preferably includes a monomer unit derived from an acrylate ester and / or a methacrylate ester as a monomer unit having the largest mass ratio. "(Meth) acryl" means "acrylic" and / or "methacryl".

Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer include (meth) acrylic acid ester containing a hydrocarbon group such as alkyl methacrylate, (meth) acrylic acid cycloalkyl ester and (meth) . Examples of the (meth) acrylic acid alkyl ester include methyl esters, ethyl esters, isopropyl esters, butyl esters, isobutyl esters, s-butyl esters, t-butyl esters, pentyl esters, iso Isohexyl ester, isooctyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (ie, lauryl ester), tridecyl ester, Tetradecyl ester, hexadecyl ester, octadecyl ester and eicosyl ester. (Meth) acrylic acid cycloalkyl esters include, for example, cyclopentyl esters and cyclohexyl esters of (meth) acrylic acid. Examples of (meth) acrylic acid aryl esters include phenyl (meth) acrylate and benzyl (meth) acrylate. As the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer, one type of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. As the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer, the alkyl (meth) acrylate having 10 or more carbon atoms in the alkyl group is preferable, and lauryl (meth) acrylate is more preferable. In order to appropriately express the basic properties such as adhesiveness by the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of the (meth) acrylic acid ester in the entire monomer component for forming the acrylic polymer is preferably Is not less than 40% by mass, and more preferably not less than 60% by mass.

The acrylic polymer may contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid ester in order to modify its cohesive strength, heat resistance, and the like. Examples of such other monomers include functional group-containing monomers such as a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide and acrylonitrile . Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid. Examples of the acid anhydride monomers include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (Meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate, such as (meth) acrylic acid, 8-hydroxyoctyl . Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methylglycidyl (meth) acrylate. (Meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acrylamide sulfonic acid, And acryloyloxynaphthalenesulfonic acid. As the phosphate group-containing monomer, for example, 2-hydroxyethyl acryloyl phosphate can be mentioned. As the other copolymerizable monomer for the acrylic polymer, one type of monomer may be used, or two or more kinds of monomers may be used. When the acrylic polymer includes a unit (first unit) derived from an alkyl (meth) acrylate having an alkyl group having 10 or more carbon atoms, the unit derived from 2-hydroxyethyl (meth) acrylate . In such an acryl-based polymer, the molar ratio of the first unit to the second unit is preferably 1 or more, more preferably 3 or more, and still more preferably 5 or more. The molar ratio is preferably 40 or less, more preferably 35 or less, and still more preferably 30 or less.

The acrylic polymer may contain a monomer unit derived from a multifunctional monomer capable of copolymerizing with a monomer component such as (meth) acrylate to form a crosslinked structure in the polymer backbone. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (Meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, (Meth) acrylate, poly (meth) acrylate, and urethane (meth) acrylate. As the polyfunctional monomer for the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. The proportion of the polyfunctional monomer in the total monomer component for forming the acrylic polymer is preferably 40% by mass or less, more preferably 40% by mass or less, for appropriately expressing the basic properties such as adhesiveness by the (meth) acrylate ester in the pressure- Or less, more preferably 30 mass% or less.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming it. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of the high degree of cleanliness in the semiconductor device manufacturing method using the dicing tape 10 to the dicing die bonding film X, the dicing tape 10 to the dicing die- The number average molecular weight of the acrylic polymer is preferably 100,000 or more, and more preferably 200,000 to 3,000,000.

The pressure-sensitive adhesive layer (12) and the pressure-sensitive adhesive for forming it may contain, for example, an external crosslinking agent to increase the number average molecular weight of the base polymer such as an acrylic polymer. Examples of the external crosslinking agent for reacting with the base polymer such as an acrylic polymer to form a crosslinked structure include a polyisocyanate compound, an epoxy compound, a polyol compound (such as a polyphenol compound), an aziridine compound, and a melamine crosslinking agent. The content of the external crosslinking agent in the pressure-sensitive adhesive layer (12) and the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer (12) is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the base polymer.

Examples of the radiation-polymerizable monomer component for forming the radiation-curable pressure-sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (Meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation-polymerizable oligomer component for forming the radiation-curable pressure-sensitive adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based and polybutadiene- Is appropriate. The total content of the radiation-polymerizable monomer component and the oligomer component in the radiation-curing pressure-sensitive adhesive is determined within a range capable of appropriately lowering the adhesive force of the pressure-sensitive adhesive layer 12 to be formed. With respect to 100 parts by mass of the base polymer such as an acrylic polymer, For example, 5 to 500 parts by mass, and preferably 40 to 150 parts by mass. As the addition type radiation curable pressure sensitive adhesive, for example, those disclosed in Japanese Patent Application Laid-open No. 60-196956 may be used.

As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, an internal radiation-curable pressure-sensitive adhesive containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the polymer side chain, An adhesive may also be used. Such an intrinsic type radiation-curable pressure-sensitive adhesive is suitable for suppressing unintended changes in the pressure-sensitive adhesive properties due to the movement of a low molecular weight component in the pressure-sensitive adhesive layer 12 to be formed.

As the base polymer contained in the intrinsic type radiation-curable pressure-sensitive adhesive, it is preferable that the acrylic polymer has a basic skeleton. As the acrylic polymer forming such basic skeleton, the above-mentioned acrylic polymer can be employed. As a method for introducing a radiation-polymerizable carbon-carbon double bond to an acrylic polymer, for example, a raw material monomer containing a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer, (Second functional group) capable of generating a reaction between a carbon-carbon double bond and a compound having a radiation-polymerizable carbon-carbon double bond in the presence of a radiation- Followed by reaction or addition reaction.

Examples of the combination of the first functional group and the second functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, an isocyanate group and a hydroxy group. Among these combinations, a combination of a hydroxy group and an isocyanate group or a combination of an isocyanate group and a hydroxy group is suitable from the viewpoint of easiness in tracking the reaction. The production of a polymer having an isocyanate group having a high reactivity is highly technically difficult. From the viewpoint of preparation or availability of an acrylic polymer, it is preferable that the first functional group on the acrylic polymer side is a hydroxy group and the second functional group is an isocyanate group The case is more appropriate. In this case, examples of the isocyanate compound containing a radiation-polymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, an isocyanate compound having a radically polymerizable unsaturated functional group include methacryloyl isocyanate, Ethyl isocyanate (MOI), and m-isopropenyl-alpha, alpha -dimethylbenzyl isocyanate. When the unsaturated functional group-containing isocyanate compound is introduced or added to the acrylic polymer, the molar ratio of the unsaturated functional group-containing isocyanate compound to the unit derived from 2-hydroxyethyl (meth) acrylate in the acrylic polymer Is preferably 0.1 or more, more preferably 0.2 or more, and even more preferably 0.3 or more. In the reaction composition comprising an acrylic polymer and an isocyanate compound having an unsaturated functional group to form an adduct to which an unsaturated functional group-containing isocyanate compound is added to the acrylic polymer, the acrylic polymer is preferably a 2-hydroxyethyl (meth) acrylate- (Second unit) is preferably 2 or less, more preferably 1.5 or less, and still more preferably 1.3 or less. The molar ratio of the unsaturated functional group-

The radiation-curing pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator. As the photopolymerization initiator, for example, an? -Ketol compound, an acetophenone compound, a benzoin ether compound, a ketal compound, an aromatic sulfonyl chloride compound, a photoactive oxime compound, a benzophenone compound, Compounds, camphorquinones, halogenated ketones, acylphosphine oxides and acylphosphonates. Examples of the? -ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone,? -hydroxy- ?,? '- dimethylacetophenone, 2-hydroxypropiophenone, and 1-hydroxycyclohexyl phenyl ketone. Examples of the acetophenone-based compound include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone, 4- (methylthio) -phenyl] -2-morpholinopropane-1. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. As the ketel-based compound, for example, benzyldimethylketal can be given. The aromatic sulfonyl chloride-based compound includes, for example, 2-naphthalenesulfonyl chloride. As the optically active oxime compound, for example, 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime can be mentioned. Examples of the benzophenone-based compound include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of the thioxanthone compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4- 2,4-diethyl thioxanthone, and 2,4-diisopropyl thioxanthone. The content of the photopolymerization initiator in the radiation-curing pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer such as acrylic polymer.

The heat-expandable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive containing components (foaming agent, thermally expandable microspheres, etc.) that foam or expand by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents As the thermally expandable microspheres, for example, microspheres having a constitution in which a material which is easily gasified by heating to expand is enclosed in the shell. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, and azide. Examples of the organic foaming agent include azo-based compounds such as azobisisobutyronitrile, azodicarbonamide, barium azodicarboxylate, and the like, fluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane, Hydrazine compounds such as toluenesulfonylhydrazide, diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis (benzenesulfonylhydrazide) and allyl bis (sulfonylhydrazide), ρ -Carbodiimide compounds such as tolylene sulfonyl semicarbazide and 4,4'-oxybis (benzenesulfonyl semicarbazide), 5-morpholyl-1,2,3,4-thiatriazole And N-nitroso compounds such as N, N'-dinitrosopentamethylenetetramine and N, N'-dimethyl-N, N'-dinitrosoterephthalamide. Examples of the material that can be easily gasified and expanded by heating to form the thermo-expansive microsphere as described above include isobutane, propane, and pentane. A thermally expandable microsphere can be manufactured by enclosing a material which easily gasifies and expands by heating in an envelope forming material by a coacervation method or an interfacial polymerization method. As the sheathing material, a material exhibiting heat melting property or a material capable of being ruptured by thermal expansion action of the enclosed material can be used. Examples of such materials include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone. have.

Examples of the above-mentioned pressure-sensitive adhesive force-reducing type pressure-sensitive adhesive include pressure-sensitive adhesives (radiation-cured radiation-curable pressure-sensitive adhesives) obtained by previously curing the radiation-curable pressure- . The radiation-cured pressure-sensitive adhesive which has been irradiated with radiation can exhibit adhesiveness due to the polymer component depending on the content of the polymer component even if the adhesive force is reduced by irradiation with radiation, It is possible to exert the adhesive force available. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of pressure-sensitive adhesive force-reducing type pressure-sensitive adhesive may be used, or two or more types of pressure-sensitive adhesive force-reducing type pressure-sensitive adhesives may be used. The entirety of the pressure-sensitive adhesive layer 12 may be formed of an adhesive force-reducing pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of an adhesive pressure- For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the whole of the pressure-sensitive adhesive layer 12 may be formed of an adhesive force-reducing pressure-sensitive adhesive, and a predetermined portion of the pressure- And the other portion may be formed of an adhesive force reducing type pressure-sensitive adhesive. When the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers constituting the laminated structure may be formed of an adhesive force reducing type pressure-sensitive adhesive, and some of the laminated structures may be formed of an adhesive force reducing type pressure-sensitive adhesive.

On the other hand, as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, an acrylic pressure-sensitive adhesive or a rubber pressure-sensitive adhesive having an acrylic polymer as a base polymer can be used. When the pressure-sensitive adhesive layer 12 contains an acrylic pressure-sensitive adhesive as a pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic pressure-sensitive adhesive is preferably a monomer unit derived from a (meth) . Examples of such an acrylic polymer include the above-mentioned acrylic polymer with respect to a radiation-curable pressure-sensitive adhesive.

The pressure-sensitive adhesive layer (12) and the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer (12) may contain a crosslinking accelerator, a tackifier, an antioxidant, a coloring agent such as a pigment or a dye, The colorant may be a compound that is colored by irradiation with radiation. Examples of such compounds include leuco dyes.

The pressure-sensitive adhesive layer 12 is preferably not more than 32 mJ / m 2, more preferably not more than 30 mJ / m 2, and more preferably not more than 28 mJ / m 2 on the pressure-sensitive adhesive surface 12a forming the interface with the adhesive layer 20 Surface free energy (second surface free energy) of preferably not more than 30 mJ / m 2, more preferably not more than 30 mJ / m 2, more preferably not more than 28 mJ / m 2 Energy). When the pressure-sensitive adhesive layer 12 is a curable pressure-sensitive adhesive layer such as a radiation-curable pressure-sensitive adhesive layer, the second surface free energy in the pressure-sensitive adhesive layer 12 after curing is preferably 32 mJ / m 2 or less, more preferably 30 mJ / M 2 or less, and more preferably 28 mJ / m 2 or less. The pressure-sensitive adhesive layer 12 is preferably not less than 15 mJ / m 2, more preferably not less than 18 mJ / m 2, and more preferably not less than 20 mJ / m 2 on the pressure-sensitive adhesive surface 12a forming the interface with the adhesive layer 20. [ Surface free energy (second surface free energy) of at least 15 mJ / m 2, more preferably at least 18 mJ / m 2, and more preferably at least 20 mJ / m 2 Energy). When the pressure-sensitive adhesive layer 12 is a curable pressure-sensitive adhesive layer such as a radiation-curable pressure-sensitive adhesive layer, the second surface free energy in the pressure-sensitive adhesive layer 12 after curing is preferably at least 15 mJ / M 2 or more, and more preferably 20 mJ / m 2 or more. The surface free energy of the adhesive surface 12a of the pressure-sensitive adhesive layer 12 can be adjusted by adjusting the composition of various monomers for forming a base polymer such as an acrylic polymer in the pressure-sensitive adhesive layer 12. [

The thickness of the pressure-sensitive adhesive layer 12 is preferably 1 to 50 占 퐉, more preferably 2 to 30 占 퐉, and still more preferably 5 to 25 占 퐉. Such a configuration is suitable for balancing the adhesive force to the adhesive layer 20 before and after the radiation curing of the pressure-sensitive adhesive layer 12 when, for example, the pressure-sensitive adhesive layer 12 includes a radiation-curable pressure- Do.

The adhesive layer 20 of the dicing die-bonding film X has a function as an adhesive showing the thermosetting property for die bonding and an adhesive function for holding a frame member such as a ring frame with a work such as a semiconductor wafer. In the present embodiment, the point adhesive for forming the adhesive layer 20 may have a composition including a thermosetting resin and a thermoplastic resin as a binder component, and may have a thermosetting functional group capable of reacting with the curing agent to cause bonding And a thermoplastic resin that is thermally stable. When the point adhesive for forming the adhesive layer 20 has a composition including a thermoplastic resin accompanied by a thermosetting functional group, the point adhesive does not need to further include a thermosetting resin (such as an epoxy resin). The adhesive layer 20 may have a single-layer structure or a multi-layer structure.

When the adhesive layer 20 contains a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting poly And a mid resin. In order to form the adhesive layer 20, one type of thermosetting resin may be used, or two or more kinds of thermosetting resins may be used. An epoxy resin is preferable as the thermosetting resin included in the adhesive layer 20 because the content of ionic impurities or the like which may cause corrosion of the semiconductor chip to be die-bonded tends to be small. As the curing agent of the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include epoxy resins such as bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolak type, And epoxy resins of the orthocresol novolak type, the trishydroxyphenylmethane type, the tetraphenylol ethane type, the hydantoin type, the trisglycidyl isocyanurate type and the glycidyl amine type. The novolak-type epoxy resin, the biphenyl-type epoxy resin, the trishydroxyphenylmethane-type epoxy resin, and the tetraphenylolethane-type epoxy resin are excellent in the reactivity with the phenol resin as the curing agent and the excellent heat resistance, Is preferably used as the epoxy resin contained in the epoxy resin (20).

Examples of the phenol resin which can act as a curing agent of the epoxy resin include novolak type phenol resins, resol type phenol resins, and polyoxystyrenes such as polyparaxyxstyrene. Examples of the novolak-type phenol resin include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, and nonylphenol novolac resins. As the phenol resin which can act as a curing agent for the epoxy resin, one type of phenol resin may be used, or two or more kinds of phenol resins may be used. Phenol novolak resin or phenol aralkyl resin tends to improve connection reliability of the adhesive when used as a curing agent for an epoxy resin as an adhesive for die bonding. Therefore, it is preferable that the epoxy resin contained in the adhesive layer 20 As a curing agent.

From the viewpoint of sufficiently accelerating the curing reaction between the epoxy resin and the phenolic resin in the adhesive layer 20, the phenolic resin preferably has a hydroxyl group in the phenolic resin per equivalent of the epoxy group in the epoxy resin component, preferably 0.5 to 2.0 equivalents, More preferably 0.8 to 1.2 equivalents.

Examples of the thermoplastic resin included in the adhesive layer 20 include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin , A polycarbonate resin, a thermoplastic polyimide resin, a polyamide resin such as 6-nylon or 6,6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET or PBT, a polyamide- Resin. In order to form the adhesive layer 20, one type of thermoplastic resin may be used, or two or more kinds of thermoplastic resins may be used. The thermoplastic resin contained in the adhesive layer 20 is preferably an acrylic resin because it is easy to secure the bonding reliability by the adhesive layer 20 because the ionic impurities are small and the heat resistance is high. From the viewpoints of adhesion of the adhesive layer 20 to the ring frame to be described later at room temperature and its vicinity and prevention of residue at the time of peeling, the adhesive layer 20 is a main component of the thermoplastic resin, It is preferable that the polymer contains a polymer having a glass transition temperature of -10 to 10 占 폚. The main component of the thermoplastic resin is a resin component that occupies the largest mass ratio among the thermoplastic resin components.

As the glass transition temperature of the polymer, the glass transition temperature (theoretical value) required based on the following Fox equation can be used. The formula of Fox is a relational expression between the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of the homopolymer for each constituent monomer in the polymer. In the following Fox equation, Tg represents the glass transition temperature (占 폚) of the polymer, Wi represents the weight fraction of the monomer i constituting the polymer, Tgi represents the glass transition temperature (占 폚) of the homopolymer of the monomer i . For example, reference may be made to the glass transition temperature of the homopolymer, for example, " Introduction of synthetic resin for novel polymeric paper 7 paint " (Gitaoka Kogyo Co., (Mitsubishi Rayon Co., Ltd.), glass transition temperatures of various homopolymers are illustrated. On the other hand, the homopolymer glass transition temperature of the monomer can be determined by a method specifically disclosed in Japanese Patent Laid-Open No. 2007-51271.

Fox's equation 1 / (273 + Tg) =? [Wi / (273 + Tgi)]

The acrylic resin contained as the thermoplastic resin in the adhesive layer 20 preferably contains a monomer unit derived from a (meth) acrylic acid ester as a main monomer unit in the mass ratio. As such a (meth) acrylic acid ester, for example, a (meth) acrylate ester similar to that described above with respect to an acrylic polymer as a component of a radiation curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be used. The acrylic resin contained as the thermoplastic resin in the adhesive layer 20 may include a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid ester. Examples of such other monomer components include functional group-containing monomers such as carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide and acrylonitrile Specific examples of the other monomers copolymerizable with the (meth) acrylic acid ester with respect to the acrylic polymer as a component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 include the same Can be used. The acrylic resin contained in the adhesive layer 20 is preferably a (meth) acrylic acid ester (particularly, an alkyl (meth) acrylate having an alkyl group of 4 or less in the number of carbon atoms of 4 or less from the viewpoint of realizing a high cohesive force in the adhesive layer 20 Ester), a carboxyl group-containing monomer, a nitrogen atom-containing monomer and a polyfunctional monomer (particularly a polyglycidyl-series polyfunctional monomer), more preferably a copolymer of ethyl acrylate, butyl acrylate, acrylic acid, (Meth) acrylate, and polyglycidyl (meth) acrylate.

The content ratio of the thermosetting resin in the adhesive layer 20 is preferably 5 to 60% by mass, more preferably 10 to 50% by mass in view of adequately expressing the function of the thermosetting adhesive in the adhesive layer 20 Mass%.

When the adhesive layer 20 contains a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming the thermosetting functional group-containing acrylic resin preferably includes a monomer unit derived from a (meth) acrylic acid ester as a main monomer unit in a mass ratio. As such a (meth) acrylic acid ester, for example, a (meth) acrylate ester similar to that described above with respect to an acrylic polymer as a component of a radiation curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be used. On the other hand, examples of the thermosetting functional group for forming the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxyl group, and an isocyanate group. Among them, a glycidyl group and a carboxyl group can be suitably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be suitably used. As the curing agent of the acrylic resin containing a thermosetting functional group, for example, the one described above may be used as an external crosslinking agent which may be a component of a radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer (12). When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenolic compound can be suitably used as a curing agent. For example, the above-mentioned various phenol resins can be used.

In order to realize a certain degree of degree of crosslinking with respect to the adhesive layer 20 before curing for die bonding, for example, it is possible to react with the functional group at the molecular chain terminal of the above-mentioned resin contained in the adhesive layer 20 Is preferably blended as a crosslinking agent in a resin composition for forming an adhesive layer. Such a configuration is suitable for improving the adhesive property under high temperature to the adhesive layer 20 and also for improving the heat resistance. As such a crosslinking agent, for example, a polyisocyanate compound can be mentioned. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylenediisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyhydric alcohol and diisocyanate. The content of the crosslinking agent in the resin composition for forming an adhesive layer is preferably from 100 to 100 parts by mass of the resin having the functional group capable of reacting with the crosslinking agent to improve the cohesion of the adhesive layer 20 to be formed 0.05 parts by mass or more, and is preferably 7 parts by mass or less from the viewpoint of improving the adhesive strength of the adhesive layer 20 to be formed. As the crosslinking agent in the adhesive layer 20, another polyfunctional compound such as an epoxy resin may be used in combination with the polyisocyanate compound.

The content ratio of the high molecular weight component in the adhesive layer 20 is preferably 50 to 100% by mass, and more preferably 50 to 80% by mass. The high molecular weight component is a component having a weight average molecular weight of 10,000 or more. Such a configuration is preferable in terms of achieving compatibility between the adhesive layer 20 at a room temperature and a temperature near the ring frame, which will be described later, and prevention of residue at the time of peeling. The adhesive layer 20 may contain a liquid resin that is liquid at 23 占 폚. When the adhesive layer 20 includes such a liquid resin, the content ratio of the liquid resin in the adhesive layer 20 is preferably 1 to 10 mass%, more preferably 1 to 5 mass% . Such a configuration is preferable in terms of achieving compatibility between the adhesive layer 20 at a room temperature and a temperature near the ring frame, which will be described later, and prevention of residue at the time of peeling.

The adhesive layer 20 may contain a filler. The elasticity of the adhesive layer 20 such as the tensile storage modulus and the physical properties such as conductivity and thermal conductivity can be adjusted by the combination of the filler with the adhesive layer 20. [ Examples of the filler include an inorganic filler and an organic filler, and particularly, an inorganic filler is preferable. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, , Aluminum, gold, silver, copper, and nickel, alloys, amorphous carbon black, and graphite. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. As the filler in the adhesive layer 20, one type of filler may be used, or two or more kinds of fillers may be used. In order to secure the adhesiveness of the adhesive layer 20 to the ring frame in the cool spreading process to be described later, the filler content in the adhesive layer 20 is preferably 30% by mass or less, more preferably 25% % Or less.

In the case where the adhesive layer 20 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 mu m, more preferably 0.005 to 1 mu m. The structure in which the average particle diameter of the filler is 0.005 탆 or more is suitable for realizing high wettability and adhesiveness to an adherend such as a semiconductor wafer in the adhesive layer 20. The constitution in which the average particle diameter of the filler is not more than 10 탆 is suitable for securing heat resistance while enjoying a sufficient filler adding effect in the adhesive layer 20. The average particle diameter of the filler can be obtained, for example, by using a particle size distribution meter (trade name " LA-910 " manufactured by Horiba Seisakusho Co., Ltd.) of a photometric system.

The adhesive layer 20 may contain other components as required. Examples of other components include flame retardants, silane coupling agents, and ion trap agents. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the silane coupling agent include? - (3,4-epoxycyclohexyl) ethyltrimethoxysilane,? -Glycidoxypropyltrimethoxysilane, and? -Glycidoxypropylmethyldiethoxysilane. have. Examples of the ion trap agent include hydrotalcites, bismuth hydroxide, antimony oxide (e.g., " IXE-300 ", manufactured by Toagosei Co., Ltd.), zirconium phosphate having a specific structure (E.g., " IXE-100 " manufactured by Kyowa Chemical Industry Co., Ltd.), magnesium silicate (for example, " Kyowade 600 ", manufactured by Kyowa Chemical Industry Co., Kyo Ward 700 "). A compound capable of forming a complex between metal ions can also be used as an ion trap agent. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridyl-based compounds. Of these, triazole-based compounds are preferable from the viewpoint of the stability of the complex formed with metal ions. Examples of such triazole compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-butylphenyl) (2-benzotriazolyl) -4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1- Dihydroxypropyl) benzotriazole, 1- (1,2-dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4- Benzyltriazole, octyl-3- [3-t-butyl (2-hydroxyphenyl) (5-chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2-ethylhexyl-3- [ 2- (2H-benzotriazol-2-yl) -6- (3-t-butyl-4-hydroxy- (1-methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazol- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) Methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- Butylphenyl) -5-chloro-benzotriazole, 2- [2-hydroxy-3,5-di (1,1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'- 4- (1,1,3,3-tetramethylbutyl) phenol], 2- [2-hydroxy-3,5-bis (?,? Dimethylbenzyl) phenyl] -2H-benzotriazole, and methyl-3- [3- (2H-benzotriazol-2-yl) -5-t- butyl-4-hydroxyphenyl] propionate Further, a quinoline compound, a hydroxy anthra Hydroxyl group-containing compounds, such as certain non-compound, the polyphenol compound also can be used as the ion trap. Specific examples of such hydroxyl group-containing compounds include 1,2-benzene diol, alizarin, anthrulphine, tannin, gallic acid, methyl gallate, pyrogallol and the like. As the other components as described above, one kind of component may be used, or two or more kinds of components may be used.

The thickness of the adhesive layer 20 is, for example, in the range of 1 to 200 占 퐉. The upper limit of the thickness is preferably 100 占 퐉, more preferably 80 占 퐉. The lower limit of the thickness is preferably 3 占 퐉, more preferably 5 占 퐉.

The surface free energy (first surface free energy) of the surface 20b at the interface with the pressure-sensitive adhesive layer 12 in the adhesive layer 20 is preferably 30 mJ / m 2 or more, more preferably 31 mJ / m 2 or more , More preferably at least 32 mJ / m < 2 >. The first surface free energy is preferably 45 mJ / m 2 or less, more preferably 43 mJ / m 2 or less, and still more preferably 40 mJ / m 2 or less.

The adhesive layer 20 preferably has a thickness of at least 0.1 N / 10 mm, more preferably at least 0.3 N / 10 mm, more preferably at least 0.1 N / 10 mm, Mm or more, more preferably 0.5 N / 10 mm or more. The adhesive layer 20 exhibits a 180 deg. Peel adhesion strength, preferably 20 N / 10 mm or less, more preferably 10 N / 10 mm or less, on the SUS plane in the peeling test under the same conditions. The 180 deg. Peel adhesion can be measured by using a tensile tester (trade name " Autograph AGS-J ", manufactured by Shimadzu Seisakusho Co., Ltd.). The sample piece provided for the measurement is prepared as follows. First, a laminate having a laminate structure of the base material 11, the pressure-sensitive adhesive layer 12 and the adhesive layer 20 of 10 mm in width × 100 mm in length is cut out from the dicing die-bonding film X. When the pressure-sensitive adhesive layer 12 is of the ultraviolet curing type, the pressure-sensitive adhesive layer 12 is cured by irradiating the pressure-sensitive adhesive layer 12 with ultraviolet light of 350 mJ / cm 2 from the side of the substrate 11 in the dicing die- Thereafter, the laminate is cut out. Subsequently, the side of the adhesive layer 20 of the laminate was bonded to the silicon wafer by a compression bonding operation in which a 2 kg roller was reciprocated at 60 DEG C, and then the bonded body was left at 60 DEG C for 2 minutes . Then, the pressure-sensitive adhesive layer 12 and the base material 11 are peeled off from the adhesive layer 20 on the silicon wafer. Then, a reinforcing tape (trade name "BT-315", manufactured by Nitto Denko Kabushiki Kaisha) was bonded to the adhesive layer 20 left on the silicon wafer, the adhesive layer 20 was peeled from the silicon wafer, And the adhesive layer 20 is transferred with a tape. Thus, an adhesive layer sample piece (10 mm wide × 100 mm long) carrying the reinforcing tape is produced. The bonding to the SUS plate, which is the adherend of the sample piece, is performed by a compression bonding operation in which a 2 kg roller is reciprocated one time.

The adhesive layer 20 was formed on the adhesive layer 20 having a width of 4 mm and a thickness of 80 m at an initial chuck distance of 10 mm, a frequency of 10 Hz, a dynamic strain of +/- 0.5 占 퐉, and a temperature raising rate of 5 占 폚 / The measured tensile storage modulus at 23 캜 is preferably 100 MPa or higher, more preferably 500 MPa or higher, and even more preferably 1000 MPa or higher. The tensile storage elastic modulus at 23 deg. C measured under the same conditions of the adhesive layer 20 is preferably 4000 MPa or less, more preferably 3,000 MPa or less, and still more preferably 2,000 MPa or less. The tensile storage modulus can be obtained based on dynamic viscoelasticity measurement performed using a dynamic viscoelasticity measuring apparatus (trade name: "Rheogel-E4000", manufactured by UBM). In the measurement, the size of the sample piece to be measured was set to 4 mm wide × 20 mm long × 80 μm thick, the initial chuck distance of the sample piece holding chuck was 10 mm, the measurement mode was the tensile mode, The range is from -30 to 100 캜, the frequency is 10 ㎐, the dynamic strain is set to 賊 0.5 탆, and the temperature raising rate is set to 5 캜 / min.

The outer peripheral end portion 11e of the base material 11 and the outer peripheral end portion 12e of the pressure sensitive adhesive layer 12 in the dicing tape 10 in the in-plane direction D of the dicing die- And the outer peripheral edge 20e of the adhesive layer 20 are within a distance of 1000 占 퐉, preferably within 500 占 퐉. That is, the outer peripheral end portion 20e of the adhesive layer 20 is formed so as to extend in the film surface in-plane direction D from the inner side of 1000 占 퐉 to the outer side 1000 占 퐉 with respect to the outer peripheral end portion 11e of the base material 11 Preferably from the inner side 500 mu m to the outer side 500 mu m and further from the inner side 1000 mu m to the outer side 1000 mu m with respect to the outer peripheral end 12e of the pressure-sensitive adhesive layer 12, Lt; RTI ID = 0.0 > 500 < / RTI > In the structure in which the dicing tape 10 to the adhesive layer 12 and the adhesive layer 20 thereon have substantially the same dimensions in the in-plane direction D, the adhesive layer 20 has the same structure as the above- , The frame member adhesion area is included on the surface 20a side in addition to the work adhesion area.

In the case where the pressure-sensitive adhesive layer 12 of the dicing tape 10 is a radiation curable pressure-sensitive adhesive layer in the dicing die-bonding film X, in the T-type peeling test under the conditions of 23 캜 and a peeling rate of 300 mm / The peel force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 after radiation curing is preferably 0.06 N / 20 mm or more, more preferably 0.1 N / 20 mm or more, and more preferably 0.15 N / Or more. The peel strength between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 after the radiation curing in the T-type peel test under the conditions of 23 deg. C and a peeling rate of 300 mm / min is preferably 0.25 N / More preferably 0.23 N / 20 mm or less, and more preferably 0.2 N / 20 mm or less. The peel force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 before the radiation curing in the T-type peel test under the conditions of 23 占 폚 and a peeling rate of 300 mm / min is preferably 2 N / 20 mm or more . This T-type peeling test can be performed using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). The sample piece provided in the test is manufactured as follows. First, in the dicing die-bonding film X, the pressure-sensitive adhesive layer 12 is irradiated with ultraviolet light of 350 mJ / cm 2 from the side of the substrate 11 to cure the pressure-sensitive adhesive layer 12. Subsequently, a reinforcing tape (trade name "BT-315", manufactured by Nitto Denko Kabushiki Kaisha) was bonded to the adhesive layer 20 side of the dicing die-bonding film X, and then a sample piece of 50 mm in width × 120 mm in length .

The arithmetic average surface roughness Ra of the both surfaces of the adhesive layer 12 and the adhesive layer 20 to form the interface between the adhesive layer 12 and the adhesive layer 20 in the dicing die- Is preferably 100 nm or less.

The dicing die-bonding film X may be accompanied by a separator S as shown in Fig. Specifically, the dicing die-bonding film X may have a sheet-like shape accompanied by the separator S, and the separator S may have a long shape, and a plurality of dicing die-bonding films X may be disposed thereon. And may be in the form of a roll. The separator S is an element for covering and protecting the surface of the adhesive layer 20 of the dicing die-bonding film X. When the dicing die-bonding film X is used, the separator S is peeled from the film. Examples of the separator S include a plastic film or paper surface-coated with a releasing agent such as a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a fluorine-based releasing agent or a long-chain alkyl acrylate-based releasing agent. The thickness of the separator S is, for example, 5 to 200 mu m.

The dicing die-bonding film X having the above-described structure can be produced, for example, as follows.

First, as shown in Fig. 3 (a), an adhesive composition layer C1 is formed on a separator S having a long shape. The adhesive composition layer C1 can be formed by applying and applying an adhesive composition prepared for forming the adhesive layer 20 on the separator S. [ Examples of the application method of the adhesive composition include roll coating, screen coating, and gravure coating.

Next, as shown in Fig. 3 (b), a pressure-sensitive adhesive composition layer C2 is formed on the adhesive composition layer C1. The pressure-sensitive adhesive composition layer C2 can be formed by applying the pressure-sensitive adhesive composition prepared for forming the pressure-sensitive adhesive layer 12 onto the adhesive composition layer C1. Examples of the application method of the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating.

Next, on the separator S, the adhesive layer 20 'and the pressure-sensitive adhesive layer 12' are formed through the batch heat treatment of the adhesive composition layer C1 and the pressure-sensitive adhesive composition layer C2. In this heat treatment, both layers are dried as required, and a crosslinking reaction is generated in both layers as required. The heating temperature is, for example, 60 to 175 占 폚, and the heating time is, for example, 0.5 to 5 minutes. The adhesive layer 20 'is formed by the adhesive layer 20 described above. The pressure-sensitive adhesive layer 12 'is processed by the above-described pressure-sensitive adhesive layer 12.

Next, as shown in Fig. 3 (c), the substrate 11 'is pressed and bonded onto the pressure-sensitive adhesive layer 12'. The substrate 11 'is formed by processing with the substrate 11 described above. The base material 11 'made of resin can be produced by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method and a dry lamination method . The film or substrate 11 'after the film formation is subjected to a predetermined surface treatment if necessary. In this step, the bonding temperature is, for example, 30 to 50 占 폚, preferably 35 to 45 占 폚. The bonding pressure (line pressure) is, for example, 0.1 to 20 kgf / cm, preferably 1 to 10 kgf / cm. By this step, a long laminated sheet body having a laminated structure of the separator S, the adhesive layer 20 ', the pressure-sensitive adhesive layer 12' and the substrate 11 'is obtained.

Next, as shown in Fig. 3 (d), the laminated sheet body is processed so as to project the cutting edge from the substrate 11 'side to the separator S (Fig. 3 (d) The cutting position is schematically shown by a thick line). For example, a rotating roll with a cutting edge (a cutting blade with a cutting edge), which is disposed rotatably around an axis orthogonal to the direction F while moving the laminated sheet body in the one direction F at a constant speed, Is abutted against the base 11 'side of the laminated sheet body with a predetermined pressing force. Thereby, the dicing tape 10 (the substrate 11, the pressure-sensitive adhesive layer 12) and the adhesive layer 20 are collectively formed and the dicing die-bonding film X is formed on the separator S. Thereafter, as shown in FIG. 3 (e), the material laminated portion around the dicing die-bonding film X is removed from the separator S.

Thus, the dicing die-bonding film X can be produced.

In the manufacturing process of the semiconductor device, as described above, the expanding process or the pick-up process in which the dicing die-bonding film is used may be performed in order to obtain the semiconductor chip with adhesive layer. In the pick- It is necessary that the adhesive layer in the layered semiconductor chip is peeled off from the pressure-sensitive adhesive layer so that the semiconductor chip can be picked up from the dicing tape. The difference between the first and second surface free energies at the interface between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 of the dicing die-bonding film X of the present invention is 3.5 mJ / m 2 or more, preferably 4 mJ / m 2 or more , More preferably 5 mJ / m < 2 > or more, is suitable for realizing a good pickup in the pickup process. Specifically, these are shown as examples and comparative examples to be described later. The greater the difference between the surface free energy of the adhesive surface 12a of the pressure-sensitive adhesive layer 12 and the surface free energy of the surface 20b of the adhesive layer 20 at the interface between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 , The migration of the constituent material between these two layers is difficult to occur. The migration of the constituent material between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 hardly occurs is suitable for realizing a small peeling force between both layers. The difference between the first and second surface free energies according to the interface between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 is 3.5 mJ / m 2 or more, preferably 4 mJ / m 2 or more, and more preferably 5 mJ / The configuration is suitable for securing a small peeling force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 to such an extent that a good pickup of the semiconductor chip with an adhesive layer in the pickup process can be realized.

The dicing die-bonding film X suitable for suppressing an increase in the peeling force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 can be made to have low adhesion to the adhesive layer 20, The dicing tape 10 to the adhesive layer 12 and the adhesive layer 20 thereon are substantially placed in the in-plane direction of the film so that the layer 20 includes the area for bonding the frame member in addition to the area for work- It is possible to design with the same dimensions. More specifically, as described above, the outer peripheral end 20e of the adhesive layer 20 in the in-plane direction of the dicing die-bonding film X contacts the outer peripheral end 11e of the base 11 of the dicing tape 10 And the distance from the outer peripheral end 12e of the pressure-sensitive adhesive layer 12 to a distance of 1000 占 퐉 or less, preferably 500 占 퐉 or less. Such a dicing die-bonding film X is obtained by processing for forming one dicing tape 10 having a laminated structure of the substrate 11 and the pressure-sensitive adhesive layer 12 and for forming a single adhesive layer 20 It is suitable for carrying out the processing collectively by processing such as punching. Such a dicing die-bonding film X is suitable for production efficiently in terms of reduction in the number of manufacturing steps and suppression of manufacturing cost. Further, the above-described production method in which the laminate formation of the composition for forming an adhesive layer and the composition for forming a pressure-sensitive adhesive layer and the simultaneous drying of both composition layers is carried out is more preferable than the manufacturing method in which the pressure- The difference between the first and second surface free energies according to the interface between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 is preferably 3.5 [micro] m as described above, mJ / m < 2 > or more, preferably 4 mJ / m < 2 > or more, and more preferably 5 mJ / m < 2 > or more is preferable because the adhesive layer 12 and the pressure- It is suitable for securing a small peeling force between the adhesive layers 20.

As described above, the dicing die-bonding film X is suitable for realizing a good pickup of the semiconductor chip with the adhesive layer from the dicing tape 10. [

The pressure-sensitive adhesive layer 12 in the dicing die-bonding film X is preferably not more than 32 mJ / m 2 on the pressure-sensitive adhesive surface 12a forming the interface with the adhesive layer 20 as described above, (Second surface free energy) of 30 mJ / m 2 or less, and more preferably 28 mJ / m 2 or less. This structure is suitable for ensuring the small peeling force described above between the pressure-sensitive adhesive layer 12 of the dicing die-bonding film X and the adhesive layer 20. The pressure-sensitive adhesive layer 12 is preferably 15 mJ / m 2 or more, more preferably 18 mJ / m 2 or more on the pressure-sensitive adhesive surface 12a, And preferably has a surface free energy (second surface free energy) of 20 mJ / m 2 or more. This configuration is suitable from the viewpoint of ensuring a proper adhesive force between the adhesive layer 12 and the adhesive layer 20 so as not to cause peeling between the adhesive layer 12 and the adhesive layer 20 during conveyance of the dicing die-bonding film X, for example.

The first surface free energy in the adhesive layer 20 of the dicing die-bonding film X is preferably 30 mJ / m 2 or more, more preferably 31 mJ / m 2 or more, and still more preferably 32 mJ / Lt; 2 > This structure is suitable for securing the adhesion required between the adhesive layer 20 and the pressure-sensitive adhesive layer 12. [ The first surface free energy is preferably 45 mJ / m 2 or less, more preferably 43 mJ / m 2 or less, and still more preferably 40 mJ / m 2 or less. This structure is suitable for ensuring the small peeling force described above between the adhesive layer 20 and the pressure-sensitive adhesive layer 12.

As described above, in the peeling test at 23 DEG C, the peeling angle of 180 DEG and the tensile rate of 10 mm / min, the adhesive layer 20 is preferably applied in an amount of 0.1 N / 10 mm or more, Shows a 180 DEG peel adhesion force of 0.3 N / 10 mm or more, more preferably 0.5 N / 10 mm or more. This configuration is suitable for ensuring the retention of the frame member by the dicing die-bonding film X. As described above, the adhesive layer 20 is preferably not more than 20 N / 10 mm, more preferably not more than 10 N / 10 mm, in the peeling test under the same conditions, Peel adhesion. This configuration is suitable for ensuring the detachability of the frame member from the dicing die-bonding film X.

The adhesive layer 20 was formed on the adhesive layer 20 having a width of 4 mm and a thickness of 80 占 퐉 as described above with an initial chuck distance of 10 mm, a frequency of 10 Hz, a dynamic strain of 占 .5 占 퐉, Min, the tensile storage elastic modulus at 23 ° C is preferably 100 MPa or more, more preferably 500 MPa or more, and even more preferably 1000 MPa or more. This structure is suitable for securing the adhesive force of the frame member of the adhesive layer 20 and is therefore suitable for ensuring the retention of the frame member by the dicing die-bonding film X. [ As described above, the adhesive layer 20 has a tensile storage modulus of elasticity at 23 DEG C measured under the same conditions, preferably not more than 4000 MPa, more preferably not more than 3000 MPa, more preferably not more than 2000 MPa. This configuration is suitable for ensuring the detachability of the frame member from the dicing die-bonding film X.

In the case where the pressure-sensitive adhesive layer 12 of the dicing tape 10 is a radiation-curable pressure-sensitive adhesive layer 12 in the dicing die-bonding film X, the T-type peeling test The peeling force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 after the radiation curing is preferably 0.06 N / 20 mm or more, more preferably 0.1 N / 20 mm or more , More preferably 0.15 N / 20 mm or more. This configuration is suitable for securing the adhesion between the pressure-sensitive adhesive layer 12 after curing of the dicing tape 10 and the adhesive layer 20 thereon. Therefore, in the use of the dicing die-bonding film X, In the case where the expanding process is performed after the curing of the layer 12, it is suitable for suppressing the occurrence of partial peeling, i.e., entanglement, from the pressure-sensitive adhesive layer 12 of the semiconductor chip with adhesive layer in the process. The peel strength between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 after the radiation curing in the T-type peel test under the conditions of 23 占 폚 and a peeling rate of 300 mm / min is preferably 0.25 N / 20 mm or less, more preferably 0.23 N / 20 mm or less, and more preferably 0.2 N / 20 mm or less. This configuration is suitable for realizing a good pickup of the adhesive layer-attached semiconductor chip from the pressure-sensitive adhesive layer 12 after curing in the pick-up step performed after the pressure-sensitive adhesive layer 12 is cured. The peel force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 before the radiation curing in the T-type peel test under the conditions of 23 캜 and a peeling rate of 300 mm / min is preferably Is 2N / 20 mm or more. This configuration is suitable for securing the adhesion between the pressure-sensitive adhesive layer 12 in the uncured state of the dicing tape 10 and the adhesive layer 20 thereon, and accordingly, the dicing die- In the case where the expanding process is performed in the uncured state of the pressure-sensitive adhesive layer 12 in use, in order to suppress the occurrence of the partial peeling or lifting from the pressure-sensitive adhesive layer 12 of the semiconductor chip having the adhesive layer in the process .

The adhesive surface 12a of the pressure-sensitive adhesive layer 12 and the surface 20b of the adhesive layer 20 for making the interface between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 in the dicing die- The difference in arithmetic average surface roughness (Ra) of the surface is preferably 100 nm or less as described above. This configuration is suitable for securing the adhesion between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 on the pressure-sensitive adhesive layer 12. Therefore, in the expan- sion process, Which is suitable for suppressing the occurrence of peeling, i.e., entanglement.

As described above, the pressure-sensitive adhesive layer 12 in the dicing die-bonding film X can be obtained by a method in which the first unit derived from an alkyl (meth) acrylate having 10 or more carbon atoms in the alkyl group and the second unit derived from a 2-hydroxyethyl (meth) Of a second unit of the acrylic polymer. This structure is suitable for realizing a high shear adhesive force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 on the adhesive layer 12. Therefore, the dicing tape 10) is suitably applied to the adhesive layer 20 so that the adhesive layer 20 is removed.

In the acrylic polymer in the pressure-sensitive adhesive layer 12, the molar ratio of the first unit to the second unit is preferably 1 or more, more preferably 3 or more, and still more preferably 5 or more to be. This constitution is preferable in order to suppress the binding interaction between the adhesive layer 12 and the adhesive layer 20 on the adhesive layer 12 while securing a high shear adhesive force as described above, And thus contributes to the realization of a good pickup in the pickup process. The molar ratio is preferably 40 or less, more preferably 35 or less, and still more preferably 30 or less, as described above. This structure secures the adhesion between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 and suppresses the occurrence of partial peeling, i.e., lifting from the pressure-sensitive adhesive layer 12 of the semiconductor chip with adhesive layer in the expanding process .

As described above, the acrylic polymer in the pressure-sensitive adhesive layer (12) is preferably an adduct in which an isocyanate compound having an unsaturated functional group, which is a radiation-polymerizable component, is added. When the acrylic polymer in the pressure-sensitive adhesive layer 12 is such an unsaturated functional group-containing isocyanate compound adduct, the molar amount of the unsaturated functional group-containing isocyanate compound to the second unit derived from 2-hydroxyethyl (meth) acrylate in the acrylic polymer The ratio is preferably 0.1 or more, more preferably 0.2 or more, and more preferably 0.3 or more. These constitutions are suitable for appropriately increasing the elasticity of the pressure-sensitive adhesive layer 12 through the reaction between the acrylic polymer and the unsaturated functional group-containing isocyanate compound, and contributes to good decoupling of the adhesive layer 20 in the expanding process. From the viewpoint of reducing the low-molecular-weight components in the pressure-sensitive adhesive layer 12 after curing, it is also possible to use a reaction composition containing an acrylic polymer and an unsaturated functional group-containing isocyanate compound for forming adducts in which an isocyanate compound having an unsaturated functional group is added to the acrylic polymer , The molar ratio of the unsaturated functional group-containing isocyanate compound to the unit derived from the 2-hydroxyethyl (meth) acrylate of the acrylic polymer (second unit) is preferably not more than 2, more preferably not more than 1.5 Or less, more preferably 1.3 or less.

4 to 9 show a semiconductor device manufacturing method according to an embodiment of the present invention.

In this semiconductor device manufacturing method, first, as shown in Figs. 4A and 4B, a dividing groove 30a is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the side of the first surface Wa of the semiconductor wafer W, and a wiring structure (not shown) necessary for the semiconductor element is already formed on the first surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held on the first surface Wa A dividing groove 30a having a predetermined depth is formed by using a rotating blade such as a dicing device. The dividing groove 30a is a space for separating the semiconductor wafer W into semiconductor chip units (the dividing grooves 30a are schematically shown by bold lines in Figs. 4 to 6).

Next, as shown in Fig. 4 (c), the joining of the wafer processing tape T2 having the adhesive surface T2a to the first surface Wa side of the semiconductor wafer W and the joining of the wafer processing tape T1 Peeling is performed.

Next, as shown in Fig. 4 (d), in a state in which the semiconductor wafer W is held on the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until the semiconductor wafer W reaches a predetermined thickness (Wafer thinning step). The grinding process can be performed using a grinding machine equipped with a grinding wheel. By this wafer thinning step, a semiconductor wafer 30A that can be separated into a plurality of semiconductor chips 31 is formed in the present embodiment. Specifically, the semiconductor wafer 30A has a portion (connection portion) for connecting a portion to be separated into a plurality of semiconductor chips 31 in the wafer on the second surface Wb side. The distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 mu m, and preferably the thickness of the connecting portion in the semiconductor wafer 30A, Is 3 to 20 mu m.

Next, as shown in Fig. 5A, the semiconductor wafer 30A held on the wafer processing tape T2 is bonded to the adhesive layer 20 of the dicing die bonding film X. Then, as shown in Fig. Thereafter, as shown in Fig. 5B, the wafer processing tape T2 is peeled from the semiconductor wafer 30A. In the case where the pressure-sensitive adhesive layer 12 in the dicing die-bonding film X is a radiation-curing pressure-sensitive adhesive layer, the adhesive layer 20 of the semiconductor wafer 30A is used instead of the above-described radiation irradiation in the production process of the dicing die- ), The pressure sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the side of the substrate 11. The dose is, for example, 50 to 500 mJ / cm 2, preferably 100 to 300 mJ / cm 2. The area (irradiation area R shown in FIG. 1) in which irradiation of the adhesive layer 12 in the dicing die-bonding film X is performed as a measure for reducing the adhesive force is performed by, for example, applying the adhesive layer 20 in the pressure- Is a region excluding the periphery of the junction region.

Next, after the ring frame 41 is adhered onto the adhesive layer 20 of the dicing die-bonding film X, as shown in Fig. 6A, the dicing die- The die-bonding film X is fixed to the holding tool 42 of the expand apparatus.

Next, a first expanding process (a cool expansion process) is performed as shown in FIG. 6 (b) under a relatively low temperature condition, and the semiconductor wafer 30A is reorganized into a plurality of semiconductor chips 31 The adhesive layer 20 of the dicing die-bonding film X is separated into the adhesive layer 21 of the small piece, and the semiconductor chip 31 with the adhesive layer is obtained. In this process, the hollow cylinder-shaped push-up member 43 provided in the expanding device is raised against the dicing tape 10 at the lower side of the drawing of the dicing die bonding film X, and the semiconductor wafer 30A The dicing tape 10 of the dicing die-bonding film X to which the dicing die bonding film X is adhered is stretched so as to stretch in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expanse is performed under the condition that a tensile stress is generated in the dicing tape 10 in the range of 15 to 32 MPa, preferably 20 to 32 MPa. The temperature condition in the Cool Expansion process is, for example, 0 deg. C or less, preferably -20 to -5 deg. C, more preferably -15 to -5 deg. C, and more preferably -15 deg. The expand speed (the speed at which the lifting member 43 rises) in the cooling expansion process is preferably 0.1 to 100 mm / sec. The amount of expanse in the Cool Expand process is preferably 3 to 16 mm.

In this step, the semiconductor wafer 31 is thinned and broken at a portion where the semiconductor wafer 30A is likely to be cracked, resulting in fragmentation of the semiconductor chip 31. [ In addition, in this step, deformation is suppressed in each region where the respective semiconductor chips 31 are in close contact with each other in the adhesive layer 20 adhered to the pressure-sensitive adhesive layer 12 of the exposing dicing tape 10 On the other hand, a tensile stress generated in the dicing tape 10 acts in a portion opposed to the dividing groove between the semiconductor chips 31 in a state in which such deformation suppressing action does not occur. As a result, portions of the adhesive layer 20 opposed to the dividing grooves between the semiconductor chips 31 are cut off. After this step, as shown in Fig. 6 (c), the lifting member 43 is lowered, and the expanded state of the dicing tape 10 is released.

Next, under a relatively high temperature condition, the second expanding process is performed as shown in Fig. 7 (a), and the distance (spacing distance) between the semiconductor chips 31 with adhesive layers is extended. In this process, the hollow cylinder-shaped push-up member 43 provided in the expand apparatus is raised again, and the dicing tape 10 of the dicing die-bonding film X is expanded. The temperature condition in the second expansion step is, for example, 10 DEG C or more, and preferably 15 to 30 DEG C. [ The expansion speed (the speed at which the lifting member 43 ascends) in the second expanding process is, for example, 0.1 to 10 mm / sec, preferably 0.3 to 1 mm / sec. The expanding amount in the second expanding step is, for example, 3 to 16 mm. The separation distance of the semiconductor chip 31 with an adhesive layer is extended to such an extent that the semiconductor chip 31 with an adhesive layer can be properly picked up from the dicing tape 10 in the pickup process to be described later. After this step, as shown in Fig. 7 (b), the lifting member 43 is lowered and the expanded state on the dicing tape 10 is released. In order to suppress the narrowing of the separation distance of the adhesive layer-attached semiconductor chip 31 on the dicing tape 10 after releasing the expanded state, It is preferable to heat and shrink the portion of the chip 31 outside the holding region.

Next, a cleaning step of cleaning the side of the semiconductor chip 31 in the dicing tape 10 accompanying the adhesive-layer-attached semiconductor chip 31 by using a cleaning liquid such as water is optionally carried out. As shown in the figure, the semiconductor chip 31 with an adhesive layer is picked up from the dicing tape 10 (pickup step). For example, the pin member 44 of the pick-up mechanism is moved upward from the lower side of the dicing tape 10 in the figure to the semiconductor chip 31 with an adhesive layer to be picked up and pushed up through the dicing tape 10 And then adsorbed and held by the adsorption jig 45. In the pick-up process, the pushing-up speed of the pin member 44 is, for example, 1 to 100 mm / second, and the push-up amount of the pin member 44 is, for example, 50 to 3000 탆.

9 (a), the semiconductor chip 31 with the adhesive layer picked up is temporarily fixed to the predetermined adherend 51 through the adhesive layer 21. Then, as shown in Fig. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive force at 25 캜 at the time of temporary fixing of the adhesive layer 21 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 51. The constitution in which the adhesive layer 21 has a shear adhesive strength of 0.2 MPa or more is a method of bonding the adhesive layer 21 to the semiconductor chip 31 or the adherend 51 by ultrasonic vibration or heating in a wire- It is suitable for suppressing the occurrence of shear deformation in the surface and appropriately performing wire bonding. The shear adhesive force at 175 占 폚 at the time of temporary fixing of the adhesive layer 21 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa with respect to the adherend 51.

Next, as shown in FIG. 9B, a terminal portion (not shown) of an electrode pad (not shown) of the semiconductor chip 31 and an adherend 51 is electrically connected through a bonding wire 52 (Wire bonding process). Wiring between the electrode pad of the semiconductor chip 31 and the terminal portion of the adherend 51 and the bonding wire 52 is realized by ultrasonic welding accompanied by heating and is performed so that the adhesive layer 21 is not thermally cured. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature in the wire bonding is, for example, 80 to 250 占 폚, preferably 80 to 220 占 폚. Further, the heating time is from several seconds to several minutes.

9 (c), the semiconductor chip 31 is bonded to the semiconductor chip 31 by the sealing resin 53 for protecting the semiconductor chip 31 and the bonding wire 52 on the adherend 51. Next, (Sealing step). In this step, the adhesive layer 21 is thermally cured. In this step, the encapsulating resin 53 is formed by a transfer molding technique using, for example, a mold. As the constituent material of the sealing resin 53, for example, an epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 占 폚, and the heating time is, for example, 60 seconds to several minutes. In the case where the curing of the sealing resin 53 does not proceed sufficiently in this step (sealing step), a post-curing step for completely curing the sealing resin 53 after the present step is performed. Even when the adhesive layer 21 is not completely thermally cured in the sealing step, complete thermal curing of the adhesive layer 21 together with the sealing resin 53 in the post-curing step becomes possible. In the post-curing process, the heating temperature is, for example, 165 to 185 占 폚, and the heating time is, for example, 0.5 to 8 hours.

As described above, a semiconductor device can be manufactured.

In the present embodiment, as described above, after the semiconductor chip 31 with an adhesive layer is temporarily fixed to the adherend 51, the wire bonding process is performed without the adhesive layer 21 reaching full thermal curing. Instead of such a configuration, in the present invention, after the semiconductor chip 31 with an adhesive layer is temporarily fixed to the adherend 51, the wire bonding process may be performed after the adhesive layer 21 is thermally cured.

In the semiconductor device manufacturing method according to the present invention, the wafer thinning step shown in Fig. 10 may be performed instead of the wafer thinning step described above with reference to Fig. 4 (d). In the wafer thinning step shown in Fig. 10 after the above-described process is performed with reference to Fig. 4 (c), in a state in which the semiconductor wafer W is held on the wafer processing tape T2, The semiconductor wafer divided body 30B which is thinned by grinding from the two faces Wb and held on the wafer processing tape T2 including the plurality of semiconductor chips 31 is formed. In this step, a method (first method) of grinding the wafer until the dividing groove 30a itself is exposed on the second surface Wb side may be employed. In the step, A method of grinding the wafer up to a point before the cracking and then generating a crack between the dividing groove 30a and the second surface Wb by the action of the pressing force against the wafer from the rotating grindstone to form the semiconductor wafer divided body 30B A second method) may be employed. According to the adopted method, the depth of the dividing groove 30a formed as described above with reference to Figs. 4A and 4B from the first surface Wa is appropriately determined. In Fig. 10, the dividing grooves 30a through the first method, or the dividing grooves 30a through the second method, and the cracks extending therefrom are schematically shown by bold lines. In the present invention, after the semiconductor wafer divided body 30B thus manufactured is bonded to the dicing die bonding film X in place of the semiconductor wafer 30A, the respective steps described above with reference to Figs. 5 to 9 are performed .

Figs. 11A and 11B show a first expand process (a cool expansion process) performed after the semiconductor wafer divided body 30B is bonded to the dicing die bonding film X. Fig. In this process, the hollow cylinder-shaped push-up member 43 provided in the expanding device is lifted up against the dicing tape 10 at the lower side of the drawing of the dicing die bonding film X, The dicing tape 10 of the dicing die-bonding film X to which the semiconductor wafer 30B is bonded is stretched so as to extend in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B. This expanse is performed under the condition that a tensile stress is generated in the dicing tape 10 within a range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa. The temperature condition in this step is, for example, 0 deg. C or less, preferably -20 to -5 deg. C, more preferably -15 to -5 deg. C, and more preferably -15 deg. The expand speed (the speed at which the lifting member 43 ascends) in this step is preferably 1 to 500 mm / sec. The exponent amount in this step is preferably 50 to 200 mm. By this cooling expansion process, the adhesive layer 20 of the dicing die-bonding film X is cut into the adhesive layer 21 of the small piece, and the semiconductor chip 31 with the adhesive layer is obtained. Specifically, in this step, the semiconductor chips 31 of the semiconductor wafer divided body 30B in the adhesive layer 20 adhering to the pressure sensitive adhesive layer 12 of the exposing dicing tape 10 are brought into close contact with each other The dicing tape 10 is prevented from being deformed at a position opposite to the dividing groove 30a between the semiconductor chips 31 in a state where such deformation suppressing action does not occur Tensile stress is applied. As a result, portions opposed to the division grooves 30a between the semiconductor chips 31 in the adhesive layer 20 are cut off.

In the semiconductor device manufacturing method according to the present invention, instead of the above-described configuration in which the semiconductor wafer 30A or the semiconductor wafer divided body 30B is bonded to the dicing die bonding film X, the semiconductor wafer 30C ) May be bonded to the dicing die-bonding film X.

As shown in Figs. 12 (a) and 12 (b), first, a modified region 30b is formed in a semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the side of the first surface Wa of the semiconductor wafer W, and a wiring structure (not shown) necessary for the semiconductor element is already formed on the first surface Wa. In this step, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T3, and the laser beam Is irradiated to the semiconductor wafer W from the side opposite to the wafer T3, along the line to be divided, and the modified region 30b is formed in the semiconductor wafer W by ablation by multiphoton absorption. The modified region 30b is a weakening region for separating the semiconductor wafer W into semiconductor chips. A method of forming a modified region 30b on a line to be divided by laser light irradiation in a semiconductor wafer is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370, The light irradiation condition is suitably adjusted within the range of, for example, the following conditions.

≪ Laser irradiation condition >

(A) Laser light

Laser light source Semiconductor laser excitation Nd: YAG laser

wavelength 1064 nm

Laser light spot cross-sectional area 3.14 x 10 < ^-8 >

Rash type Q switch pulse

Repetition frequency 100 kHz or less

Pulse width 1 μs or less

Print 1mJ or less

Laser light quality TEM00

Polarization characteristic Linear polarization

(B) a condenser lens

Magnification 100 times or less

NA 0.55

Transmittance to laser light wavelength 100% or less

(C) The moving speed of the loading table on which the semiconductor substrate is loaded 280 mm / sec or less

Next, as shown in Fig. 12 (c), in a state in which the semiconductor wafer W is held on the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until the semiconductor wafer W reaches a predetermined thickness Whereby a semiconductor wafer 30C that can be separated into a plurality of semiconductor chips 31 is formed (wafer thinning step). In the present invention, the semiconductor wafer 30C manufactured as described above may be bonded to the dicing die bonding film X in place of the semiconductor wafer 30A, and then each of the steps described above with reference to Figs. 5 to 9 may be performed .

Figs. 13A and 13B show a first expand process (cool expansion process) performed after the semiconductor wafer 30C is bonded to the dicing die bonding film X. Fig. In this process, the hollow cylinder-shaped push-up member 43 provided in the expanding device is raised against the dicing tape 10 at the lower side of the drawing of the dicing die bonding film X, and the semiconductor wafer 30C Of the dicing die-bonding film X is stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expanse is performed under the condition that a tensile stress is generated in the dicing tape 10 within a range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa. The temperature condition in this step is, for example, 0 deg. C or less, preferably -20 to -5 deg. C, more preferably -15 to -5 deg. C, and more preferably -15 deg. The expand speed (the speed at which the lifting member 43 ascends) in this step is preferably 1 to 500 mm / sec. The exponent amount in this step is preferably 50 to 200 mm. By this cooling expansion process, the adhesive layer 20 of the dicing die-bonding film X is cut into the adhesive layer 21 of the small piece, and the semiconductor chip 31 with the adhesive layer is obtained. Specifically, in this step, a crack is formed in the weakened modified region 30b of the semiconductor wafer 30C, and the semiconductor chip 31 is fragmented. In this step, the semiconductor chips 31 of the semiconductor wafer 30C adhere closely to each other in the adhesive layer 20 adhering to the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded The tensile stress generated in the dicing tape 10 acts in a region where the deformation is suppressed in each region while the portion opposed to the crack formation portion of the wafer does not generate such a deformation suppressing action. As a result, the portion of the adhesive layer 20 opposed to the portion where cracks are formed between the semiconductor chips 31 is cut off.

Further, in the present invention, the dicing die-bonding film X can be used to obtain a semiconductor chip with an adhesive layer as described above. In the case where a plurality of semiconductor chips are laminated to form a three- It can also be used for obtaining an attached semiconductor chip. A spacer may be interposed with the adhesive layer 21 between the semiconductor chips 31 in such a three-dimensional mounting, or a spacer may not be interposed.

Example

[Example 1]

<Adhesive Layer>

54 parts by mass of an acrylic polymer A ₁ (a copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight: 1,200,000, glass transition temperature: 0 占 폚, epoxy thin: 0.4eq / And 3 parts by mass of a solid phenol resin (trade name: MEHC-7851SS, solid at 23 ° C, manufactured by Meiwa Kasei Kogyo Co., Ltd.) and a liquid phenol resin (trade name: MEH- Ltd.) and 40 parts by mass of a silica filler (trade name "SO-C2", average particle size: 0.5 μm, manufactured by Admatechs Co., Ltd.) were added to and mixed with methyl ethyl ketone, The concentration was adjusted so that the viscosity became 700 mPa, to obtain an adhesive composition C ₁ . Subsequently, the adhesive composition C ₁ was applied onto the silicone release-treated surface of the PET separator (having a thickness of 38 탆) having the surface subjected to the silicon release treatment using an applicator to form a coating film. Followed by heating and drying. Thus, an adhesive layer having a thickness of 10 占 퐉 in Example 1 was formed on the PET separator. The composition of the adhesive layer in Example 1 is shown in Table 1. In Table 1, the units of each numerical value showing the composition of the composition are the relative &quot; parts by mass &quot; in the composition, being). ^.

<Pressure-sensitive adhesive layer>

(LA), 20 parts by mol of 2-hydroxyethyl acrylate (2HEA) and 20 parts by mol of 2-hydroxyethyl acrylate (2HEA) in a reaction vessel equipped with a stirrer, a thermometer, A mixture containing 0.2 part by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent in an amount of 100 parts by mass was stirred at 60 deg. C for 10 hours under a nitrogen atmosphere (polymerization reaction). Thus, a polymer solution containing the acrylic polymer P ₁ was obtained. With respect to the acrylic polymer P ₁ in the polymer solution, the weight average molecular weight (Mw) was 460,000, the glass transition temperature was 9.5 ° C, and the molar ratio of the LA-derived unit to the 2HEA- Then, a mixture of the polymer solution containing the acrylic polymer P ₁ , 2-methacryloyloxyethyl isocyanate (MOI) and dibutyltin dilaurate as an addition reaction catalyst was stirred at room temperature for 48 hours, Followed by stirring in an air atmosphere (addition reaction). In the reaction solution, the blending amount of the MOI is 20 moles per 100 moles of the lauryl acrylate, and the molar ratio of the amount of the MOI blended to the total amount of the 2HEA unit and the hydroxyl group in the acrylic polymer P ₁ is 1. Further, in the reaction solution, the blending amount of dibutyltin dilaurate is 0.01 part by mass based on 100 parts by mass of the acrylic polymer P ₁ . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in its side chain (an acrylic polymer to which an isocyanate compound having an unsaturated functional group was added) was obtained. Then, 1 part by mass of a polyisocyanate compound (trade name: Coronate L, manufactured by Tosoh Corporation) and 2 parts by mass of a photopolymerization initiator (trade name: Irgacure 127 (trade name)) were added to the polymer solution in an amount of 1 part by mass based on 100 parts by mass of the acrylic polymer P ₂ , Manufactured by BASF) was added and mixed. Toluene was added to the mixture to give a viscosity of 500 mPa · s at room temperature, and the mixture was diluted to obtain a pressure-sensitive adhesive composition C ₂ . Subsequently, a pressure-sensitive adhesive composition C ₂ was applied onto the above-mentioned adhesive layer formed on the PET separator using an applicator to form a coating film. The coating film was heated and dried at 130 캜 for 2 minutes, Layer. Subsequently, a substrate made of ethylene-vinyl acetate copolymer (EVA) (trade name: "RB-0104", thickness: 130 μm, manufactured by Kurashiki Boshiki Co., Ltd.) was applied to the exposed surface of the pressure-sensitive adhesive layer using a laminator at room temperature Respectively. Then, a punching process was performed in which the cutting edge was pushed in from the EVA base material side to the separator. Thus, a disc-shaped dicing die-bonding film having a laminated structure of EVA base material / pressure-sensitive adhesive layer / adhesive layer and having a diameter of 370 mm was formed on the separator. Thus, a dicing die-bonding film of Example 1 having a laminated structure including a dicing tape (EVA base / pressure-sensitive adhesive layer) and an adhesive layer was produced.

[Examples 2 to 4]

Except that the blending amount of MOI in the pressure-sensitive adhesive layer was changed from 16 mol parts (Example 2), 12 mol parts (Example 3) or 8 mol parts (Example 4) to 20 mol parts instead of the dicing die bond The dicing die-bonding films of Examples 2 to 4 were produced in the same manner as the film.

[Example 5]

<Adhesive Layer>

Acrylic polymer A ₂ (trade name: TAYASA RESIN SG-70L, nitrile group-containing acrylic copolymer, weight average molecular weight: 900,000, glass transition temperature: -13 ° C, carboxylic acid value: 5 mg KOH / g, , 6 parts by mass of a solid epoxy resin (trade name &quot; KI-3000 &quot;, solid at 23 占 폚, manufactured by Shin Nitetsu Sumikin Kagaku K. K.) and 18 parts by mass of a liquid epoxy resin (trade name: YL-980 , 5 parts by mass of a liquid phase at 23 占 폚, manufactured by Mitsubishi Chemical Corporation) and 40 parts by mass of silica filler (trade name "SO-C2", average particle size of 0.5 μm, manufactured by Admatechs Co., And the mixture was adjusted to have a viscosity at room temperature of 700 mPa 농도 to obtain an adhesive composition C ₃ . Subsequently, the adhesive composition C ₃ was applied onto the silicone release-treated surface of a PET separator (having a thickness of 38 탆) having a surface subjected to the silicon release treatment using an applicator to form a coating film. Followed by heating and drying. Thus, an adhesive layer having a thickness of 10 占 퐉 in Example 5 was formed on the PET separator.

<Pressure-sensitive adhesive layer>

A pressure-sensitive adhesive layer of Example 5 was formed in the same manner as in the above-mentioned pressure-sensitive adhesive layer in Example 1, except that the amount of MOI was changed to 16 parts by mole instead of 20 parts by mole, to prepare a dicing die-bonding film of Example 5.

[Example 6]

Ethylhexyl acrylate (2EHA), 20 parts by mol of 2-hydroxyethyl acrylate (2HEA), 2 parts by mass of 2-ethylhexyl acrylate (2EHA) in a reaction vessel equipped with a stirrer, a thermometer, 0.2 part by mass of benzoyl peroxide as a polymerization initiator and 100 parts by mass of toluene as a polymerization solvent with respect to 100 parts by mass of the monomer component were stirred at 60 deg. C for 10 hours under a nitrogen atmosphere (polymerization reaction). Thus, a polymer solution containing the acrylic polymer P ₃ was obtained. With respect to the acrylic polymer P ₃ in the polymer solution, the weight average molecular weight (Mw) was 400,000, and the glass transition temperature was 60 ° C. Then, a mixture of the polymer solution containing the acrylic polymer P ₃ , 2-methacryloyloxyethyl isocyanate (MOI) and dibutyltin dilaurate as an addition reaction catalyst was stirred at room temperature for 48 hours, Followed by stirring in an air atmosphere (addition reaction). In the reaction solution, the blending amount of MOI is 16 parts by mol per 100 parts by mol of 2-ethylhexyl acrylate. Further, in the reaction solution, the blending amount of dibutyltin dilaurate is 0.01 part by mass based on 100 parts by mass of the acrylic polymer P ₃ . By this addition reaction, a polymer solution containing an acrylic polymer P ₄ having a methacrylate group in its side chain was obtained. Then, to the polymer solution, an acrylic polymer P ₄ 1 part by mass of a polyisocyanate compound (trade name: Coronate L, manufactured by Tosoh Corporation) and 2 parts by mass of a photopolymerization initiator (trade name: Irgacure 127, manufactured by BASF) were added to 100 parts by mass Further, toluene was added to the mixture so that the viscosity of the mixture at room temperature was 500 mPa · s and diluted to obtain a pressure-sensitive adhesive composition C ₄ . In the same manner as the adhesive composition C ₃ Example 5 dicing die-bonding film of, except for using the pressure-sensitive adhesive composition C ₄ in the formation of the pressure-sensitive adhesive layer of the adhesive layer to the top is formed in a, to prepare a sixth embodiment the dicing die-bonding film of the .

[Comparative Example 1]

A dicing die-bonding film of Comparative Example 1 was prepared in the same manner as in the dicing die-bonding film of Example 1, except that the above-mentioned pressure-sensitive adhesive composition C ₄ was used in place of the pressure-sensitive adhesive composition C ₂ described above in forming the pressure-sensitive adhesive layer.

[Comparative Example 2]

The same manner as that described above with respect to Example 1, an adhesive layer (thickness 10㎛) from the above-described adhesive composition C ₁ was formed on a PET separator. This adhesive layer was subjected to punching processing with a diameter of 370 mm in a state accompanied by a separator. On the other hand, the above-described pressure-sensitive adhesive composition C ₄ was applied onto the silicone release-treated surface of a PET separator (having a thickness of 38 탆) having a surface subjected to silicone release treatment using an applicator to form a coating film. Followed by heating and drying for a minute to form a pressure-sensitive adhesive layer having a thickness of 10 mu m on the PET separator. Then, using a laminator, a substrate (trade name: "RB-0104", thickness: 130 μm, manufactured by Kurashiki Boshiki Co., Ltd.) for producing ethylene-vinyl acetate copolymer (EVA) Respectively. The thus obtained laminated sheet body was subjected to punching with a diameter of 370 mm in a state accompanied by a separator to form a dicing tape. Then, the dicing tape and the adhesive layer thus obtained were bonded while aligning the center of the dicing tape and the center of the adhesive layer so as to be aligned with each other. Thus, a dicing die-bonding film of Comparative Example 2 having a laminated structure including a dicing tape (EVA base / pressure-sensitive adhesive layer) and an adhesive layer was produced.

<Surface free energy>

For each of the dicing die-bonding films of Examples 1 to 6 and Comparative Examples 1 and 2, the surface free energy of the pressure-sensitive adhesive layer side surface in the adhesive layer and the surface free energy of the adhesive layer side surface in the pressure- Respectively. Specifically, first, ultraviolet rays were irradiated from the side of the dicing tape base material to the dicing tape pressure-sensitive adhesive layer in the dicing die-bonding film, and the pressure-sensitive adhesive layer was ultraviolet cured. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the irradiated light quantity was set to 350 mJ / cm 2. Subsequently, the adhesive layer was peeled off from the dicing tape or the pressure-sensitive adhesive layer to expose the surface free energy-to-be-identified (the pressure-sensitive adhesive layer side surface of the adhesive layer and the adhesive layer side surface of the pressure-sensitive adhesive layer). Then, contact angles were measured using a contact angle meter for water (H ₂ O) and methylene iodide (CH ₂ I ₂ ) in contact with the surface to be identified surface free energy under a condition of 20 ° C. and a relative humidity of 65% . Next, using the values of the contact angle? W of the measured water and the contact angle? I of methylene iodide, a method described in Journal of Applied Polymer Science, vol. ? S ^d (dispersion force component of surface free energy) and? S ^h (hydrogen bond force component of surface free energy) were determined according to the method described in Japanese Patent Application Laid-Open No. Hei 11-34, p1741-1747 (1969). And was the γs ^d and γs a value obtained by adding the γs ^h (= γs ^d + γs ^h) in the surface free energy of such target surface. ? S ^d and? S ^h for each surface free energy identification target surface are obtained by the solution of the binary simultaneous equations of the following equations (1) and (2). In the formula (1) (2), γw is the water surface free energy, γw ^d is a dispersion component of the water surface free energy, γw ^h is a hydrogen bonding component of the water surface free energy, γi is the free energy, γi surface of methyl iodide ^d is ^the dispersion force component of surface free energy of the methyl iodide, γi ^h is the hydrogen bonding component of surface free energy of the methyl iodide, crushed by a known literature ^{γw = 72.8mJ / ㎡, γw d} = 21.8mJ / ㎡, γw h = 51.0 mJ / m 2,? i = 50.8 mJ / m 2,? i ^d = 48.5 mJ / m 2, and? i ^h = 2.3 mJ / m 2 were used. The surface free energy? S ₁ (mJ / m 2) of the adhesive layer side surface in the adhesive layer and the surface free energy? S ₂ (mJ / m 2) of the adhesive layer side surface in the pressure sensitive adhesive layer after UV curing are shown in Table 1 . The difference? S _{1 -?} S ₂ | (mJ / m 2) of these surface free energies is also shown in Table 1.

<Surface roughness>

The surface roughness of the adhesive layer side surface and the surface roughness of the adhesive layer side surface of the pressure-sensitive adhesive layer of each of the dicing die-bonding films of Examples 1 to 6 and Comparative Examples 1 and 2 were examined. Specifically, first, ultraviolet rays were irradiated from the side of the dicing tape base material to the pressure-sensitive adhesive layer of the dicing tape in the dicing die-bonding film, and the pressure-sensitive adhesive layer was ultraviolet cured. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the irradiated light quantity was set to 350 mJ / cm 2. Subsequently, the adhesive layer was peeled off from the dicing tape or the pressure-sensitive adhesive layer. Next, the arithmetic mean surface roughness was determined for each of the surface of the adhesive layer and the surface of the pressure-sensitive adhesive layer exposed by this peeling using a confocal laser microscope (trade name "OPTELICS H300", manufactured by Laser Tech Co., Ltd.). A (㎚) | adhesive layer adhesive layer side surface of the surface roughness Ra ₂ (㎚), and the difference of these surface roughness of the surface roughness Ra ₁ (㎚), the pressure-sensitive adhesive layer of the pressure-sensitive adhesive layer side in | Ra ₁ -Ra ₂ Lt; tb &gt;

&Lt; 180 peel adhesion strength of adhesive layer >

With respect to the adhesive layers in each of the dicing die-bonding films of Examples 1 to 6 and Comparative Examples 1 and 2, 180 deg. Peel adhesion at 23 deg. C was examined as follows. First, the pressure sensitive adhesive layer in the dicing tape was irradiated with ultraviolet rays from the base side. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the irradiated light quantity was set to 350 mJ / cm 2. Subsequently, a laminate (10 mm wide × 100 mm long) having a laminated structure of the dicing tape base material, the pressure-sensitive adhesive layer and the adhesive layer was cut out from the dicing die-bonding film. Subsequently, the adhesive layer side of the laminate was bonded to the silicon wafer by a pressing operation in which a 2 kg roller was reciprocated at 60 占 폚, and then the bonded body was left at 60 占 폚 for 2 minutes. Subsequently, the pressure-sensitive adhesive layer and the substrate were peeled off from the adhesive layer on the silicon wafer. Subsequently, a reinforcing tape (trade name &quot; BT-315 &quot;, manufactured by Nitto Denko Kabushiki Kaisha) was bonded to the adhesive layer remaining on the silicon wafer, the adhesive layer was peeled from the silicon wafer, and the adhesive layer was transferred from the silicon wafer to the reinforcing tape . Thus, an adhesive layer sample piece (10 mm wide × 100 mm long) carrying a reinforcing tape was prepared. The adhesive layer sample piece and the adherend were pressed together by a pressing operation in which the sample piece of the adhesive layer was bonded to the SUS plate as the adherend and the 2 kg roller was reciprocated one time. After allowing to stand at room temperature for 30 minutes, 180 ° peel adhesion force (N) of the adhesive layer sample piece to the SUS plate was measured using a tensile tester (trade name "Autograph AGS-J" manufactured by Shimadzu Seisakusho Co., Ltd.) / 10 nm) was measured. In this measurement, the measurement temperature to the peeling temperature was 23 占 폚, the tensile angle to the peeling angle was 180 占 and the tensile speed was 10 mm / min. The measurement results are shown in Table 1.

&Lt; Tensile storage elastic modulus of adhesive layer >

Based on the dynamic viscoelasticity measurement carried out using a dynamic viscoelasticity measuring apparatus (trade name: "Rheogel-E4000", manufactured by UBM) for each of the adhesive layers in Examples 1 to 6 and Comparative Examples 1 and 2, The tensile storage modulus (MPa) was determined. The sample piece provided for the dynamic viscoelasticity measurement was prepared by laminating each adhesive layer with a thickness of 80 mu m and then cut out from the laminate to a size of 4 mm wide x 20 mm long. In this measurement, the initial chuck distance of the sample piece holding chuck was set to 10 mm, the measurement mode was set to the tensile mode, the measurement temperature range was set to -30 ° C to 100 ° C, the frequency was set to 10 Hz, The deformation was made to be 0.5 mu m and the temperature raising rate was 5 DEG C / min. The measurement results are shown in Table 1.

<T-type peel test>

With respect to each of the dicing die-bonding films of Examples 1 to 6 and Comparative Examples 1 and 2, the peeling force between the pressure-sensitive adhesive layer and the adhesive layer was examined as follows. First, a test piece in which the pressure-sensitive adhesive layer was in an uncured state was prepared from each dicing die-bonding film. Specifically, a reinforcing tape (trade name &quot; BT-315 &quot;, manufactured by Nitto Denko K.K.) was bonded to the adhesive layer side of the dicing die-bonding film, and a dicing die- × A test piece having a size of 120 mm in length was cut out. Then, the test piece was subjected to a T-type peel test using a tensile tester (trade name "Autograph AGS-J" manufactured by Shimadzu Seisakusho Co., Ltd.), and the peel force (N / 20 mm) was measured. In this measurement, the temperature condition was set at 23 DEG C and the peeling speed was set at 300 mm / min. On the other hand, a test piece having a pressure-sensitive adhesive layer in a cured state was also prepared from each dicing die-bonding film. Specifically, in the dicing die-bonding film, the pressure-sensitive adhesive layer was irradiated with ultraviolet rays of 350 mJ / cm 2 from the side of the substrate to cure the pressure-sensitive adhesive layer, and then a reinforcing tape (trade name "BT- 315 &quot; manufactured by Nitto Denko Co., Ltd.) were bonded to each other, and a test piece having a size of a width of 50 mm and a length of 120 mm was cut out from the dicing die-bonding film accompanying the reinforcing tape. Then, the test piece was subjected to a T-type peel test using a tensile tester (trade name "Autograph AGS-J" manufactured by Shimadzu Seisakusho Co., Ltd.), and the peel force (N / 20 mm) was measured. In this measurement, the temperature condition was set at 23 DEG C and the peeling speed was set at 300 mm / min. Table 1 shows the measurement results in the above T-type peeling test.

<Execution of Expanding Process and Pickup Process>

(Dicing die bonding films) of Examples 1 to 6 and Comparative Examples 1 and 2 were used to carry out the following bonding process, the first expand process (cool expansion process) for cutting, the second expand process (Room temperature expanding process), and a pick-up process.

In the bonding step, after the semiconductor wafer divided body held by a wafer processing tape (trade name "UB-3083", manufactured by Nitto Denko KK) is bonded to the adhesive layer of the dicing die bonding film, The wafer processing tape was peeled off. The dicing die-bonding film is obtained by irradiating the pressure-sensitive adhesive layer of the dicing tape with ultraviolet rays from the side of the substrate and ultraviolet-curing the pressure-sensitive adhesive layer in advance. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the irradiated light quantity was set to 350 mJ / cm 2. In the bonding, a laminator was used, the bonding speed was 10 mm / sec, the temperature condition was 60 ° C, and the pressure condition was 0.15 MPa. The semiconductor wafer divided body is prepared and prepared as follows. First, a pair of mirror-finished bare wafers (diameter: 12 inches, thickness: 780 m, Tokyo Kako Co., Ltd.) in a state of being held together with a ring frame on a wafer processing tape (trade name: &quot; V- 12S &quot;, manufactured by Nitto Denko Corporation) (Trade name &quot; NBC-ZH 203O SE HCBB &quot;, manufactured by Kabushiki Kaisha Disco Co., Ltd.) using a dicing machine (trade name &quot; DFD6361 &quot;, manufactured by Kabushiki Kaisha Disco Co., Ltd.) (Having a width of 25 占 퐉, a depth of 50 占 퐉, and a partition of 10 mm 占 10 mm in a lattice shape) was formed by a separator Subsequently, a wafer processing tape (trade name "UB-3083", manufactured by Nitto Denko Corporation) was bonded to the divisional groove forming surface, and the above wafer processing tape (trade name "V-12S") was peeled from the wafer. Thereafter, the wafer was subjected to a grinding process from the side of the other surface (the surface on which the dividing grooves were not formed) of the wafer to a thickness of 25 [mm] using a back grind device (trade name: DGP8760, manufactured by Disco Co., Mu] m. As described above, the semiconductor wafer divided body (in a state held on the wafer processing tape) was formed. This semiconductor wafer divided body includes a plurality of semiconductor chips (10 mm x 10 mm).

The Cool Expansion process was performed in the Cool Expand Unit using a Die Separating Device (trade name &quot; Die Separator DDS2300 &quot;, manufactured by Disco Co., Ltd.). Specifically, first, a ring frame made of SUS (having a diameter of 12 inches) is attached to a ring frame adhesion area (around the work adhesion area) of the adhesive layer in the above-described dicing die bonding film accompanied by the semiconductor wafer divided body Manufactured by Shikisai Disco Co., Ltd.) was adhered at room temperature. Subsequently, the dicing die-bonding film was set in the apparatus, and a dicing tape of a dicing die-bonding film accompanied by a semiconductor wafer divider was expanded in a cool expand unit of the apparatus. In this cooling expansion process, the temperature is -15 占 폚, the expanding speed is 100 mm / sec, and the expanding amount is 7 mm.

The room temperature expanding process was carried out in a room temperature expanding unit using a die separating apparatus (trade name &quot; Dye separator DDS2300 &quot;, manufactured by Disco Corporation). More specifically, the dicing tape of the dicing die-bonding film accompanied by the above-described semiconductor wafer divided body subjected to the Cool Expansion process was expanded in the room temperature expanding unit of the above apparatus. In this room-temperature expanding step, the temperature is 23 占 폚, the expanding speed is 1 mm / sec, and the expanding amount is 10 mm. Thereafter, the dicing die-bonding film passed through the room temperature expander was subjected to heat shrink treatment. The treatment temperature is 200 占 폚, and the treatment time is 20 seconds.

In the pick-up process, an attempt was made to pick up a semiconductor chip with an adhesive layer separated on a dicing tape by using a device having a pick-up mechanism (trade name: "Die Bonder SPA-300" manufactured by Shin-Kawa K.K.). For this pickup, the push-up speed by the pin member is 1 mm / sec, the push-up amount is 2000 mu m, and the pick-up evaluation number is 5. [

In the above-described process in which the dicing die-bonding films of Examples 1 to 6 and Comparative Examples 1 and 2 were used, in the cooling exponent process, the dicing tape of the semiconductor chip with adhesive layer (⊚) in the case of lifting of the adhesive layer in the case where lifting of the adhesive layer in the semiconductor chip with the adhesive layer is performed (Partial peeling off from the pressure-sensitive adhesive layer) was 40% or more with respect to the total area of the discrete semiconductor chip, it was evaluated as poor (x) with respect to lifting at the time of cutting. As to the pick-up process, it is evaluated that the pick-up property is excellent (?) When all of the five semiconductor chips with adhesive layer can be picked up from the dicing tape, and when the number of semiconductor chips with adhesive layer pickable from the dicing tape is 1 4, the pickupability was evaluated as good (O), and the case where no semiconductor chips with an adhesive layer could be picked up from the dicing tape was evaluated as poor (X). The results of these evaluations are shown in Table 1.

[evaluation]

According to the dicing die-bonding films of Examples 1 to 6, not only lifting of the adhesive layer but also lifting of the semiconductor chip with adhesive layer from the dicing tape does not occur in the Cool Expansion process, In the pick-up process, the semiconductor chip with adhesive layer could be properly picked up.

X: Dicing die-bonding film
10: Dicing tape
11: substrate
11e: outer peripheral end
12: pressure-sensitive adhesive layer
12e: outer peripheral end
20, 21: adhesive layer
20e: outer peripheral end
W, 30A, and 30C: semiconductor wafers
30B: Semiconductor wafer parted body
30a: Split groove
30b: modified region
31: Semiconductor chip

Claims (14)

A dicing tape having a laminated structure including a substrate and a pressure-sensitive adhesive layer;
And an adhesive layer in close contact with the pressure-sensitive adhesive layer in the dicing tape so as to be peelable,
Wherein the surface of the adhesive layer and the surface of the pressure-sensitive adhesive layer for forming the interface between the adhesive layer and the pressure-sensitive adhesive layer can generate a surface free energy difference of 3.5 mJ / m 2 or more. The method according to claim 1,
Wherein the surface of the pressure-sensitive adhesive layer can have a surface free energy of 32 mJ / m &lt; 2 &gt; or less. The method according to claim 1,
Wherein the surface free energy of the surface of the adhesive layer is 30 to 45 mJ / m &lt; 2 &gt;. The method according to claim 1,
Wherein the adhesive layer has a 180 DEG peel adhesion strength of 0.1 to 20 N / 10 mm with respect to the SUS plane in a peel test at 23 DEG C, a peel angle of 180 and a tensile rate of 10 mm / . The method according to claim 1,
The adhesive layer was formed on an adhesive layer sample piece having a width of 4 mm and a thickness of 80 m at an initial chuck distance of 10 mm, a frequency of 10 Hz, a dynamic strain of +/- 0.5 占 퐉 and a temperature raising rate of 5 占 폚 / And a tensile storage modulus of 100 to 4000 MPa. The method according to claim 1,
Wherein the pressure-sensitive adhesive layer is a radiation-curable pressure-
Wherein the peel strength between the pressure-sensitive adhesive layer and the adhesive layer before the radiation curing in the T-type peel test at 23 占 폚 and the peeling speed of 300 mm / min is 2N / 20 mm or more. The method according to claim 1,
Wherein a difference between an arithmetic mean surface roughness of the surface of the pressure-sensitive adhesive layer and an arithmetic mean surface roughness of the surface of the adhesive layer is 100 nm or less. The method according to claim 1,
Wherein the pressure-sensitive adhesive layer comprises an acrylic polymer comprising a first unit derived from an alkyl (meth) acrylate having an alkyl group of 10 or more carbon atoms and a second unit derived from 2-hydroxyethyl (meth) acrylate, Bond film. 9. The method of claim 8,
Wherein the molar ratio of the first unit to the second unit in the acrylic polymer is 1 to 40. The dicing die- 9. The method of claim 8,
Wherein the acrylic polymer is an adduct of an unsaturated functional group-containing isocyanate compound. 11. The method of claim 10,
The molar ratio of the unsaturated functional group-containing isocyanate compound to the second unit in the acrylic polymer is 0.1 or more. 12. The method according to any one of claims 1 to 11,
Wherein the pressure-sensitive adhesive layer is a radiation-curable pressure-
A peeling strength between the pressure-sensitive adhesive layer after the radiation curing and the adhesive layer in the T-type peel test at 23 占 폚 and a peeling rate of 300 mm / min was 0.06 to 0.25 N / film. 13. The method of claim 12,
Wherein the outer peripheral end of the adhesive layer is at a distance of not more than 1000 占 퐉 from the outer peripheral end of the pressure-sensitive adhesive layer in an in-plane direction of the film. 12. The method according to any one of claims 1 to 11,
Wherein the outer peripheral end of the adhesive layer is at a distance of not more than 1000 占 퐉 from the outer peripheral end of the pressure-sensitive adhesive layer in an in-plane direction of the film.

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