CN108728000A - Cut die bonding film - Google Patents

Cut die bonding film Download PDF

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Publication number
CN108728000A
CN108728000A CN201810345577.4A CN201810345577A CN108728000A CN 108728000 A CN108728000 A CN 108728000A CN 201810345577 A CN201810345577 A CN 201810345577A CN 108728000 A CN108728000 A CN 108728000A
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China
Prior art keywords
adhesive layer
adhesive
die bonding
bonding film
cutting die
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CN201810345577.4A
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CN108728000B (en
Inventor
木村雄大
高本尚英
大西谦司
宍户雄郎
宍户雄一郎
福井章洋
大和道子
井上真
井上真一
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Nitto Denko Corp
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Nitto Denko Corp
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Priority claimed from JP2017145636A external-priority patent/JP7019333B2/en
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Inorganic Chemistry (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)

Abstract

The present invention provides the cutting die bonding film for the good pickup for being adapted for carrying out the semiconductor chip Self cleavage band with adhesive layer.The cutting die bonding film (X) of the present invention has cutting belt (10) and adhesive layer (20).Cutting belt (10) has the stepped construction comprising base material (11) and adhesive phase (12).Adhesive layer (20) and adhesive phase (12) are strippingly closely sealed.Be used to form the interface of adhesive phase (12) and adhesive layer (20), the surface (12a) of adhesive phase (12) and the surface (20b) of adhesive layer (20) 3.5mJ/m can be generated2Above surface free energy difference.

Description

Cut die bonding film
Technical field
The present invention relates to the cutting die bonding films that can be used in the manufacturing process of semiconductor device.
Background technology
In the manufacturing process of semiconductor device, the size for carrying chip engagement in order to obtain is comparable bonding with chip The semiconductor chip of the semiconductor chip of film, the i.e. adhesive layer with chip engagement is engaged using cutting chip sometimes Film.Die bonding film is cut with size corresponding with the semiconductor crystal wafer as processing object, such as with：Including base The cutting belt of material and adhesive phase；The strippingly closely sealed die bonding film (adhesive layer) in its adhesive phase side.
One of the method for semiconductor chip with adhesive layer is obtained as cutting die bonding film is used, it is known that warp The method for the process for being cut off die bonding film by being extended to the cutting belt in cutting die bonding film.This method In, first, the laminated semiconductor wafer on the die bonding film of cutting die bonding film.The semiconductor crystal wafer is for example with it Afterwards with die bonding film cut off cut off together and can monolithic turn to the modes of multiple semiconductor chips and processed. Then, in order to small to generate closely sealed multiple adhering films on a semiconductor die respectively by the die bonding film in cutting belt The mode of piece (adhesive layer) cuts off the die bonding film, using expanding unit to the cutting belt of cutting die bonding film It is extended (the extension process cut off).In the extension process, position is cut off in being equivalent to die bonding film At position, the semiconductor die fenestra on die bonding film is cut off, on cutting die bonding film and/or cutting belt, Semiconductor crystal wafer monolithic turns to multiple semiconductor chips.Then, adhesive layer is carried for multiple after cutting off in cutting belt Semiconductor chip carry out extension process (the extension process of separation) again to expand mutual distance.Then, After by such as cleaning process, carrying in cutting belt is jacked up from the downside of cutting belt by the acicular member of mechanism for picking Each semiconductor chip of adhesive layer picks up semiconductor chip (pickup process) from cutting belt later.At this moment, object is picked up Adhesive layer needs in semiconductor chip with adhesive layer are suitably removed from the adhesive phase of cutting belt.As above behaviour Make, obtains carrying the die bonding film i.e. semiconductor chip of adhesive layer.This with adhesive layer semiconductor chip by Its adhesive layer is fixed on by chip engagement on the adherends such as installation base plate.For for example such as the cutting chip to use above The relevant technologies of bonding film are recorded in for example following Patent Documents 1 to 3.
Existing technical literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2007-2173 bulletins
Patent document 2：Japanese Unexamined Patent Publication 2010-177401 bulletins
Patent document 3：Japanese Unexamined Patent Publication 2012-23161 bulletins
Invention content
Problems to be solved by the invention
Figure 14 is denoted as the cutting die bonding film Y of an example of cutting die bonding film with diagrammatic cross-section. It includes cutting belt 60 and die bonding film 70 to cut die bonding film Y.Cutting belt 60 is base material 61 and performance bonding force The stepped construction of adhesive phase 62.Die bonding film 70 is closely sealed by the bonding force and adhesive phase 62 of adhesive phase 62.This The cutting die bonding film Y of sample has size and half as processing object, that is, workpiece in the manufacturing process of semiconductor device The corresponding disc-shape of semiconductor wafer can be used for above-mentioned extension process.Such as shown in figure 15, it is bonded in semiconductor crystal wafer 81 Implement extension process in the state that die bonding film 70 and ring frame 82 are attached at adhesive phase 62.Ring frame 82 be In the state of being attached at cutting die bonding film Y, machinery when the conveying mechanisms conveying workpieces such as the conveying arm that expanding unit has The frame component abutted to property.Cutting die bonding film Y relies on the adhesive phase 62 of cutting belt 60 with such ring frame 82 Bonding force and the mode that can be fixed on the film designs.That is, cutting die bonding film Y has the adhesive in cutting belt 60 Existing design as ring frame component fitting region is ensured around die bonding film 70 in layer 62.In this way Design in, direction in the pellicular front between the outer circumference end 62e of adhesive phase 62 and the outer circumference end 70e of die bonding film 70 Spacing distance is 10~30mm or so.
But it in the cutting die bonding film of the die bonding film on having cutting belt and its adhesive phase, adopts With cutting belt and/or the composition of its adhesive phase and die bonding film direction in pellicular front design size having the same When, die bonding film needs to undertake ring frame holding function, it is therefore necessary to ensure that the bonding force of ring frame.In order to ensure Die bonding film connects the bonding force of ring frame, the die bonding film with the chip in above-mentioned cutting die bonding film Y It closes film 70 to compare, such as more low elasticity.But the low elasticity is easy to cause from the adhesive phase of cutting belt and connects chip Required peeling force increases when closing film stripping.In order to realize the semiconductor chip with adhesive layer in above-mentioned pickup process Good pickup, the preferably peeling force between the adhesive phase and die bonding film of cutting belt is smaller.
As described above, in cutting die bonding film, in order to realize the semiconductor chip Self cleavage for carrying adhesive layer The good pickup of band, the sometimes difficulty on Adjoint technology.The present invention is the invention made based on such situation, purpose It is, the cutting chip engagement for the good pickup for being adapted for carrying out the Self cleavage band of the semiconductor chip with adhesive layer is provided Film.
The solution to the problem
Cutting die bonding film provided by the invention has cutting belt and adhesive layer.Cutting belt have comprising base material and The stepped construction of adhesive phase.Adhesive layer and the adhesive phase in cutting belt are strippingly closely sealed.It is viscous to be used to form cutting belt Mixture layer and the interface of adhesive layer thereon, the surface of adhesive layer and the surface of adhesive phase can generate 3.5mJ/m2 Above surface free energy difference.That is, this cutting die bonding film possesses following composition：Forming adhesive layer and adhesive phase Interface adhesive layer surface and adhesive layer surface in, the surface free energy (the 1st surface free energy) on adhesive layer surface And the difference of the surface free energy (the 2nd surface free energy) of adhesive layer surface is 3.5mJ/m2Above or the difference between the two can be made For 3.5mJ/m2More than.For example, cutting belt adhesive phase be the curing types such as radiation-curable adhesive layer adhesive When layer, the difference with the 2nd surface free energy in the 1st surface free energy in adhesive layer and the adhesive phase after solidification is 3.5mJ/m2Above mode constitutes this cutting die bonding film.In addition, in the present invention, above-mentioned surface free energy difference is preferably 4mJ/m2Above, it is more preferably 5mJ/m2More than.The cutting die bonding film constituted above can be used in semiconductor device The semiconductor chip with adhesive layer is obtained in manufacturing process.
In the manufacturing process of semiconductor device, as described above, carrying the semiconductor chip of adhesive layer in order to obtain, have Shi Jinhang uses extension process, the pickup process for cutting die bonding film.In the pickup process, it is desirable to be able to from cutting belt Adhesive phase removes the adhesive layer in the semiconductor chip with adhesive layer, to pick up the semiconductor core from cutting belt Piece.The inventors of the present invention have found：The adhesive layer of this cutting die bonding film is above-mentioned with the interface of cutting belt adhesive phase The difference of 1st and the 2nd surface free energy is 3.5mJ/m2Above, it is preferably 4mJ/m2Above, it is more preferably 5mJ/m2Above state It is suitable for realizing good pickup in pickup process.Shown in specific Examples and Comparative Examples as be described hereinafter.In adhesive layer and glue The difference of the interface of mixture layer, the surface free energy on adhesive layer surface and the surface free energy of adhesive layer surface is bigger, this The constituent material of two interlayers is more not susceptible to shift.Also, the constituent material between adhesive layer and adhesive phase is not susceptible to Transfer is suitable for realizing small peeling force in two interlayers, is suitable for for example low by this in the low elasticity for seeking adhesive layer Elastification ensures adhesive layer to the bonding force of frame component and inhibits peeling force liter between the adhesive layer and adhesive phase It is high.The difference of 1st and the 2nd surface free energy of the interface of adhesive layer and adhesive phase is 3.5mJ/m2Above, preferably 4mJ/m2Above, it is more preferably 5mJ/m2Above above-mentioned composition is suitable for ensuring between the adhesive phase and adhesive layer small Peeling force make its be can be realized in pickup process with adhesive layer semiconductor chip good pickup degree.
It is suitable for seeking the low elasticity of adhesive layer and ensuring bonding force and inhibition of the adhesive layer to frame component Raised cutting die bonding film of peeling force between the adhesive layer and cutting belt adhesive phase, is suitable for viscous at it Connect in oxidant layer the mode comprising workpiece fitting region and frame component fitting region in pellicular front direction with substantially the same Size design cutting belt and/or its adhesive phase and adhesive layer thereon.In this cutting die bonding film, it may be used Such as following design：The direction in pellicular front, the outer circumference end of adhesive layer be located at base material away from cutting belt, adhesive phase it is each At distance within 1000 μm of outer circumference end.The cutting die bonding film of such composition is suitable for through punch press process etc. Processing is disposably implemented to be used to form the processing of a cutting belt of the stepped construction with base material and adhesive phase and is used for Form the processing of an adhesive layer.
In the manufacturing process of above-mentioned cutting die bonding film Y, the cutting for being used to form predetermined size and shape is needed Processing work with 60 manufacturing procedure (the 1st manufacturing procedure) and the die bonding film 70 for being used to form predetermined size and shape Sequence (the 2nd manufacturing procedure) is used as process independent of each other.In 1st manufacturing procedure, for example, for having defined slider, meeting Be formed as the substrate layer of base material 61 and be formed as the stepped construction of the adhesive phase of adhesive phase 62 positioned at the meeting between them Sheet body is laminated, implements the processing for making processing knife be entered to from substrate layer side until reaching slider.It can be formed as adhesive phase 62 Adhesive phase formed via the coating adhesive composition on slider and drying thereafter.By the 1st manufacturing procedure, every The cutting belt 60 of the stepped construction with adhesive phase 62 and base material 61 in vitro is formed on slider.2nd manufacturing procedure In, for example, for the layer with defined slider and the stepped construction for the adhesive layer that die bonding film 70 can be formed as Lamellar body implements the processing for making processing knife be entered to from adhesive layer side until reaching slider.It is thin to be formed as chip engagement The adhesive layer of film 70 is formed via the coating adhesive composition on slider and drying thereafter.Pass through the 2nd processing work Sequence forms die bonding film 70 on slider.The cutting belt 60 that will be formed like this by process independent of each other later With 70 position alignment of die bonding film and be bonded.Figure 16 is shown with covering 70 surface of die bonding film and adhesive phase The cutting die bonding film Y of the slider 83 on 62 surfaces.
In contrast, cutting belt and/or its adhesive phase with the adhesive layer as die bonding film thereon thin The cutting die bonding film of present invention when direction is with substantially the same design size in film surface for example can be as got off Manufacture.First, on defined slider, the composition by coating adhesive layer formation forms adhesive composite layer. Then, on the adhesive composite layer, the composition by coating cutting belt adhesive phase formation forms adhesive combination Nitride layer.Then, via the disposable drying of these composition layers, adhesive layer and adhesive phase are formed on slider.Later, It is bonded the base material of cutting belt in the exposed surface of adhesive phase.Then, to slider, adhesive layer, adhesive phase and base The stacking sheet body of the stepped construction of material implements the processing for making processing knife be entered to from substrate side until reaching slider.As a result, The predetermined size and shape of the stepped construction with adhesive layer, adhesive phase and base material on slider are formed on slider Cutting die bonding film.The direction in pellicular front has in fact with adhesive layer thereon for cutting belt and/or its adhesive phase The cutting die bonding film of the present invention in matter when identical design size is suitable for processing one by punch press process etc. Implement to secondary property the processing for a cutting belt for being used to form the stepped construction with base material and adhesive phase and is used to form one The processing of a adhesive layer.This such cutting die bonding film Cong Xiao Minus manufacturing processes number inhibits the viewpoints such as manufacturing cost It sets out and is suitable for efficiently manufacturing.In addition, being combined via adhesive layer formation composition and cutting belt adhesive phase formation The stacking of object formed and the disposably dry above-mentioned manufacturing method of two composition layers be respectively formed cutting belt adhesive The manufacturing method that is bonded again is compared later for layer and adhesive layer, is easy to cause in the closely sealed of cutting belt adhesive phase and adhesive layer The peeling force of two interlayer of interface increases, still, in the 1st and the 2nd table of adhesive layer and the interface of cutting belt adhesive phase The difference of face free energy is 3.5mJ/m as described above2Above, it is preferably 4mJ/m2Above, it is more preferably 5mJ/m2Above present invention Above-mentioned composition be suitable for ensuring between the adhesive phase and adhesive layer that small peeling force makes it be the energy in pickup process Realize the degree of the good pickup of the semiconductor chip with adhesive layer.
As described above, the cutting die bonding film of the present invention is adapted for carrying out the semiconductor chip with adhesive layer certainly The good pickup of cutting belt.
From ensuring above-mentioned small peeling force between the cutting belt adhesive phase and adhesive layer of this cutting die bonding film From the viewpoint of, cutting belt adhesive phase is constituted as follows：The surface with the closely sealed interface of adhesive layer is being formed, is being had It is preferred that 32mJ/m2Below, more preferable 30mJ/m2Below, further preferred 28mJ/m2(the 2nd surface is certainly for surface free energy below By energy).When cutting belt adhesive phase is the adhesive phases of curing types such as radiation-curable adhesive layer, the adhesive after solidification 2nd surface free energy of layer is preferably 32mJ/m2Below, it is more preferably 30mJ/m2Below, it is more preferably 28mJ/m2With Under.In addition, from do not produced between cutting belt adhesive phase and adhesive layer the conveying of this cutting die bonding film is medium From the viewpoint of the mode of raw stripping ensures the bonding force of appropriateness of two interlayer, cutting belt adhesive phase structure as follows At：The surface with the closely sealed interface of adhesive layer is being formed, there is preferred 15mJ/m2Above, it is more preferably 18mJ/m2Above, into The preferred 20mJ/m of one step2Above surface free energy (the 2nd surface free energy).Cutting belt adhesive phase is viscous for radiation curable When the adhesive phase of the curing types such as mixture layer, the 2nd surface free energy of the adhesive phase after solidification is preferably 15mJ/m2Above, More preferably 18mJ/m2Above, it is more preferably 20mJ/m2More than.
For above-mentioned 1st surface free energy of the adhesive layer of this cutting die bonding film, from ensuring that cutting chip connects From the perspective of closing the closing force required between adhesive layer and cutting belt adhesive phase in film, preferably 30mJ/m2With Upper, more preferably 31mJ/m2Above, it is more preferably 32mJ/m2More than.In addition, from these adhesive layers and adhesive phase Between ensure above-mentioned small peeling force from the viewpoint of, the 1st surface free energy is preferably 45mJ/m2Below, it is more preferably 43mJ/ m2Below, it is more preferably 40mJ/m2Below.
The adhesive layer of this cutting die bonding film is in 23 DEG C, 180 ° of peel angle and tensile speed 10mm/ minutes Under the conditions of disbonded test in SUS flat tables reveal preferred 0.1N/10mm or more, more preferable 0.3N/10mm or more, further It is preferred that 180 ° of peel adhesions of 0.5N/10mm or more.This composition of bonding force about adhesive layer is ensuring to be based on originally cutting It is suitable in terms of cutting the holding of the frame component of die bonding film.In addition, the stripping examination of the adhesive layer under the same conditions It tests and preferred 20N/10mm or less, more preferable 10N/10mm 180 ° of peel adhesions below is revealed to SUS flat tables.It is related viscous This composition for connecing the bonding force of oxidant layer is suitable in terms of ensuring frame component from the dismounting of this cutting die bonding film.
The adhesive layer of this cutting die bonding film to the adhesive layer coupons of 80 μm of width 4mm and thickness first 23 measured under conditions of 5 DEG C/min of distance 10mm, frequency 10Hz, dynamic strain ± 0.5 μm and heating rate between beginning fixture Storage tensile modulus at DEG C be preferably 100MPa or more, more preferably 500MPa or more, further preferably 1000MPa with On.This composition of storage tensile modulus in relation to adhesive layer is suitable in terms of ensuring adhesive layer to the bonding force of frame component Suitable, it is suitable in terms of the holding for ensuring the frame component based on this cutting die bonding film therefore.In addition, this is viscous It is preferably 4000MPa or less, more preferably 3000MPa to connect the storage tensile modulus at 23 DEG C that oxidant layer measures under the same conditions Below, it is more preferably 2000MPa or less.This composition of storage tensile modulus in relation to adhesive layer is ensuring frame component certainly It is suitable in terms of the dismounting of this cutting die bonding film.
In this cutting die bonding film, cutting belt adhesive phase is preferably radiation-curable adhesive layer, also, 23 DEG C and T-type disbonded test of the peeling rate under conditions of 300mm/ minutes in radiation curing after adhesive phase and bonding agent Peeling force between layer is preferably 0.06N/20mm or more, more preferably 0.1N/20mm or more, further preferably 0.15N/ 20mm or more.It is such constitute be adapted to ensure that the solidification of cutting belt after it is closely sealed between adhesive phase and adhesive layer thereon Property, therefore, when being extended process after the solidification of cutting belt adhesive phase using this cutting die bonding film, in the process Middle semiconductor chip autoadhesion oxidant layer of the inhibition with adhesive layer is suitable in terms of being partially stripped the generation floated.This Outside, the adhesive phase after the radiation curing in the T-type disbonded test of 23 DEG C and peeling rate under conditions of 300mm/ minutes with Peeling force between adhesive layer is preferably 0.25N/20mm or less, more preferably 0.23N/20mm or less, is more preferably 0.2N/20mm or less.Such constitute carries for being realized in the pickup process that is carried out after the solidification of cutting belt adhesive phase For the good pickup of adhesive phase it is suitable after the semiconductor chip self-curing of adhesive layer.
In this cutting die bonding film, cutting belt adhesive phase is preferably radiation-curable adhesive layer, also, 23 DEG C and T-type disbonded test of the peeling rate under conditions of 300mm/ minutes in radiation curing before adhesive phase and bonding agent Peeling force between layer is preferably 2N/20mm or more.It is such be formed in ensure the incured adhesives layer of cutting belt with thereon Adhesive layer between adaptation on be it is suitable, therefore, using this cutting die bonding film cutting belt bonding Oxidant layer be it is uncured in the state of when being extended process, inhibit the semiconductor chip self-adhesion with adhesive layer in this process The generation aspect floated that is partially stripped of mixture layer is suitable.
For be used to form cutting belt adhesive phase and adhesive layer in this cutting die bonding film interface it is viscous The difference on mixture layer surface and adhesive layer surface, the arithmetic mean surface roughness (Ra) on two surfaces is preferably 100nm or less.This The composition of sample be for ensuring the adaptation between cutting belt adhesive phase and adhesive layer thereon it is suitable, therefore, In extending process inhibit with adhesive layer semiconductor chip autoadhesion oxidant layer be partially stripped the generation floated in terms of It is suitable.
Adhesive phase in this cutting die bonding film preferably comprises acrylic polymer, the acrylic Object includes：From alkyl carbon number be 10 or more (methyl) alkyl acrylate Unit the 1st and derive from (methyl) third Unit the 2nd of olefin(e) acid 2- hydroxyl ethyl esters." (methyl) acrylate " refers to " acrylate " and/or " methacrylate ".Bonding Acrylic polymer in oxidant layer includes the list from (methyl) alkyl acrylate of the alkyl with 10 or more carbon number The composition of unit first and from (methyl) acrylic acid 2- hydroxyl ethyl esters is suitable for bonding in cutting belt adhesive phase and thereon High shear bonding force is realized between oxidant layer, therefore, is suitable for making to cut off power and is suitably acted in extension process the direction along face Adhesive layer in the cutting belt of extension, to make the adhesive layer cut off.
For the acrylic polymer in the adhesive phase of this cutting die bonding film, above-mentioned Unit the 1st relative to The molar ratio of above-mentioned Unit the 2nd is preferably 1 or more, more preferably 3 or more, further preferably 5 or more.Such composition pair Ensure high shear bonding force as described above between adhesive layer in cutting belt adhesive phase and thereon and inhibits two interlayers It is preferred for the associativity interaction generated in the stacking direction, therefore, helps to realize good in pickup process Pickup.In addition, the molar ratio is preferably 40 or less, more preferably 35 or less, further preferably 30 or less.Such composition Ensuring the adaptation between cutting belt adhesive phase and adhesive layer to inhibit with adhesive layer in extending process Semiconductor chip autoadhesion oxidant layer is suitable in terms of being partially stripped the generation floated.
Acrylic polymer in the adhesive phase of this cutting die bonding film is preferably that addition is poly- as radiation Addition compound product made of the isocyanate compound containing unsaturated functional group of conjunction property ingredient.At this point, isocyanide containing unsaturated functional group Molar ratio of the ester compound relative to the Unit the 2nd for deriving from (methyl) acrylic acid 2- hydroxyl ethyl esters in acrylic polymer Preferably 0.1 or more, it is more preferably 0.2 or more, further preferably 0.3 or more.These are formed in via acrylic Object and reacting for the isocyanate compound containing unsaturated functional group and be suitable in terms of making the moderately high elastification of adhesive phase, have The good of adhesive layer for helping extend in process is cut off.In addition, from reduce cure after low molecular weight in adhesive phase at From the perspective of point, comprising being used to form the addition isocyanate compound containing unsaturated functional group in acrylic polymer Made of in the acrylic polymer of addition compound product and the response composite of the isocyanate compound containing unsaturated functional group, contain Unsaturated functional group isocyanate compound is relative to deriving from (methyl) acrylic acid 2- hydroxyl ethyl esters in acrylic polymer The molar ratio of unit (Unit the 2nd) is preferably 2 or less, more preferably 1.5 or less, further preferably 1.3 or less.
Description of the drawings
Fig. 1 is the diagrammatic cross-section of the cutting die bonding film of an embodiment of the invention.
Fig. 2 indicates an example for the case where cutting die bonding film shown in FIG. 1 carries slider.
Fig. 3 indicates an example of the manufacturing method of cutting die bonding film shown in FIG. 1.
Fig. 4 indicates a part of work in the manufacturing method for semiconductor device using cutting die bonding film shown in FIG. 1 Sequence.
Fig. 5 indicates the subsequent handling of process shown in Fig. 4.
Fig. 6 indicates the subsequent handling of process shown in fig. 5.
Fig. 7 indicates the subsequent handling of process shown in fig. 6.
Fig. 8 shows the subsequent handlings of process shown in Fig. 7.
Fig. 9 indicates the subsequent handling of process shown in Fig. 8.
Figure 10 is indicated in the variation using the manufacturing method for semiconductor device of cutting die bonding film shown in FIG. 1 A part of process.
Figure 11 is indicated in the variation using the manufacturing method for semiconductor device of cutting die bonding film shown in FIG. 1 A part of process.
Figure 12 is indicated in the variation using the manufacturing method for semiconductor device of cutting die bonding film shown in FIG. 1 A part of process.
Figure 13 is indicated in the variation using the manufacturing method for semiconductor device of cutting die bonding film shown in FIG. 1 A part of process.
Figure 14 indicates the diagrammatic cross-section of existing cutting die bonding film.
Figure 15 indicates to cut the occupation mode of die bonding film shown in Figure 14.
Figure 16 indicates to cut a kind of supply form of die bonding film shown in Figure 14.
Reference sign
X cuts die bonding film
10 cutting belts
11 base materials
11e outer circumference ends
12 adhesive phases
12e outer circumference ends
20,21 adhesive layer
20e outer circumference ends
W, 30A, 30C semiconductor crystal wafer
30B semiconductor crystal wafer dividing bodies
30a slot segmentations
30b modification areas
31 semiconductor chips
Specific implementation mode
Fig. 1 is the diagrammatic cross-section of the cutting die bonding film X of an embodiment of the invention.Cut chip engagement Film X can be used for during obtaining the semiconductor chip with adhesive layer for example in the manufacture of semiconductor device In aftermentioned such extension process, there is the stepped construction comprising cutting belt 10 and adhesive layer 20.In addition, cutting chip connects Closing film X has the disc of size corresponding with the semiconductor crystal wafer of the processing object in the manufacturing process of semiconductor device Shape, diameter is for example in the range of 345~380mm (8 inches in the range of (12 inch wafers correspond to type), 245~280mm Wafer corresponds to type), (18 inches of crystalline substances in the range of (6 inch wafers correspond to type) or 495~530mm in the range of 195~230mm The corresponding type of circle).
It cuts in die bonding film X, cutting belt 10 has the stepped construction comprising base material 11 and adhesive phase 12.Bonding Oxidant layer 12 has adhesive surface 12a in 20 side of adhesive layer.Adhesive layer 20 has face 20a, 20b, is pasted comprising workpiece in the face sides 20a Region and frame component fitting region are shared, also, in the adhesive phase 12 and/or its adhesive surface of the face sides 20b and cutting belt 10 12a is strippingly closely sealed.The adhesive surface 12a of adhesive phase 12 forms two layers of interface with the face 20b of adhesive layer 20.In addition, Cutting die bonding film X has following composition：The surface free energy (the 1st surface free energy) of the face 20b of adhesive layer 20 And the difference of the surface free energy (the 2nd surface free energy) of the adhesive surface 12a of adhesive phase 12 is 3.5mJ/m2Above, preferably 4mJ/m2Above, it is more preferably 5mJ/m2Above composition；Or so that the surface free energy difference is 3.5mJ/m2Above, preferably 4mJ/m2Above, it is more preferably 5mJ/m2Above composition.In the present invention, each table of adhesive layer surface and adhesive layer surface Face free energy refers to, for being contacted under conditions of 20 DEG C and relative humidity 65% with the object surface of identification surface free energy is required Water (H2) and diiodomethane (CH O2I2) each drop, measure contact angle θ w, θ i using contact angle meter, using the contact angle values, It is asked according to the method described in Journal of Applied Polymer Science, vol.13, p1741-1747 (1969) Go out γ sd(the dispersion force ingredient of surface free energy) and γ sh(the hydrogen bond force ingredient of surface free energy) obtains the two addition Value γ s (=γ sd+γsh).The deriving method of surface free energy γ s is specifically as shown in the Examples.
The base material 11 of cutting belt 10 is worked as supporter in cutting belt 10 and/or cutting die bonding film X Component.Base material 11 suitable can use such as plastic basis material (especially plastic film).Composition material as the plastic basis material Material, such as can enumerate：Polyvinyl chloride, polyolefin, polyester, polyurethane, makrolon, polyether-ether-ketone, gathers Vingon Acid imide, polyetherimide, polyamide, fully aromatic polyamide, polyphenylene sulfide, aromatic polyamides, fluororesin, cellulose-based tree Fat and organic siliconresin.As polyolefin, such as can enumerate：Low density polyethylene (LDPE), straight-chain low density polyethylene (LDPE), middle density Polyethylene, high density polyethylene (HDPE), ultra-low density polyethylene, atactic copolymerized polypropene, block copolymerization polypropylene, homopolypropylene, Polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene-(methyl) acrylic acid copolymer Object, ethylene-(methyl) acrylate copolymer, ethylene-butene copolymer and ethylene-hexene co-polymers.As polyester, such as It can enumerate：Polyethylene terephthalate (PET), polyethylene naphthalate and polybutylene terephthalate Ester (PBT).Base material 11 can be formed of one material, and can also be formed by two kinds or more materials.Base material 11 can have single layer Structure, it is possible to have multilayered structure.Can be non-stretched film in addition, in the case that base material 11 is formed by plastic film, It can be single axle drawn membrane, can also be biaxially oriented film.Adhesive phase 12 on base material 11 is ultraviolet light as described later In the case of curing type, base material 11 preferably has ultraviolet light permeability.
During cutting the use of die bonding film X, make cutting belt 10 and/or base material 11 for example, by local heating When contraction, base material 11 preferably has heat-shrinkable.From the viewpoint of the good heat-shrinkable for ensuring base material 11, base material 11 is excellent Choosing is comprising ethylene-vinyl acetate copolymer as principal component.The principal component of base material 11 refers to being accounted for most in base material constituent The ingredient of big mass ratio.In addition, in the case that base material 11 is formed by plastic film, for cutting belt 10 and/or base material 11, In terms of realizing isotropic heat-shrinkable, base material 11 is preferably biaxially oriented film.Cutting belt 10 and/or base material 11 exist Percent thermal shrinkage in the heat treatment experiment that 100 DEG C of heating temperature and heating treatment time carry out under conditions of 60 seconds is preferably 2 ~30%, 2~25%, further preferably 3~20%, further preferably 5~20% are more preferably.The percent thermal shrinkage refers to The percent thermal shrinkage in the so-called directions MD and at least one of the percent thermal shrinkage in the so-called directions TD.
The surface of 12 side of adhesive phase of base material 11 can implement for improving and the object of the adaptation of adhesive phase 12 Reason processing, chemical treatment or primary coat processing.As physical treatment, such as can enumerate：Sided corona treatment, corona treatment, Sandblasting working process, ozone exposure processing, fire exposure processing, high-voltage electric shock exposure treatment and ionization radial line processing.As Chemical treatment, such as chromic acid processing can be enumerated.For improving adhesive phase of the processing of adaptation preferably to base material 11 The entire surface of 12 sides is implemented.
The thickness of base material 11 is from ensuring base material 11 as cutting belt 10 and/or the supporter hair of cutting die bonding film X From the perspective of the intensity for waving effect, preferably 40 μm or more, more preferably 50 μm or more, further preferably 55 μm or more, Further preferably 60 μm or more.In addition, realizing the flexible sight of appropriateness from cutting belt 10 and/or cutting die bonding film X Point sets out, and the thickness of base material 11 is preferably 200 μm or less, more preferably 180 μm or less, further preferably 150 μm or less.
The adhesive phase 12 of cutting belt 10 contains adhesive.Adhesive can be can be by irradiation with radiation, heating etc. Intentionally make the adhesive (bonding force reduction type adhesive) that bonding force reduces from external effect, can also be bonding force The adhesive (the non-reduced type adhesive of bonding force) not reduced by the effect from outside nearly or completely.For as bonding Adhesive in oxidant layer 12 still uses the non-reduced type adhesive of bonding force using bonding force reduction type adhesive, can be according to making It is thin that the cutting chip engagement such as method, condition of singualtion of semiconductor chip of singualtion is carried out with cutting die bonding film X The occupation mode of film X is come suitable for selection.
As the adhesive in adhesive phase 12, when using bonding force reduction type adhesive, in cutting die bonding film X Use during, adhesive phase 12 can be used separately and show the state of relatively high bonding force and show relatively low bonding The state of power.For example, when die bonding film X will be cut for aftermentioned extension process, in order to inhibit to prevent bonding agent 20 autoadhesion oxidant layer 12 of layer float, remove, using the high adhesion state of adhesive phase 12, and after this, for by band There is the semiconductor chip of adhesive layer from the aftermentioned pickup process that the cutting belt 10 of cutting die bonding film X is picked up, is From adhesive phase 12 it is easily picked up the semiconductor chip with adhesive layer, the low adhesion power of adhesive phase 12 can be utilized State.
As such bonding force reduction type adhesive, such as Radiation curing adhesive can be enumerated (with spoke The adhesive of ray-curable), thermal expansion type adhesive etc..In the adhesive phase 12 of present embodiment, one kind can be used Bonding force reduction type adhesive can also use two kinds or more bonding force reduction type adhesives.Furthermore, it is possible to be adhesive phase 12 Whole to be formed by bonding force reduction type adhesive, the part that can also be adhesive phase 12 bonds dosage form by bonding force reduction type At.For example, when adhesive phase 12 has single layer structure, can be that adhesive phase 12 is whole bonds dosage form by bonding force reduction type At, can also be adhesive phase 12 predetermined portion formed by bonding force reduction type adhesive, other positions are by the non-drop of bonding force Low profile adhesive is formed.Can form whole layers of stepped construction by bonding in addition, when adhesive phase 12 has stepped construction Power reduction type adhesive is formed, and can also be that a part of layer in stepped construction is formed by bonding force reduction type adhesive.
As the Radiation curing adhesive in adhesive phase 12, can be used for example through electron beam, ultraviolet light, α Ray, β rays, gamma-rays or X-ray irradiation and the adhesive of cured type, can the use of particularly suitable ground pass through purple Outside line is irradiated and the adhesive (ultraviolet-curing adhesive) of cured type.
As the Radiation curing adhesive in adhesive phase 12, such as the radiation curing of addition type can be enumerated Type adhesive contains the base polymers such as the acrylic polymer as acrylic adhesives and gathers with radiation Monomer component, the oligomer ingredient of the radiation polymerisms of functional groups such as the carbon-to-carbon double bond of conjunction property.
Above-mentioned acrylic polymer is preferably comprised to be made from the monomeric unit of acrylate and/or methacrylate For the most monomeric unit of mass ratio." (methyl) acrylic acid " refers to " acrylic acid " and/or " methacrylic acid ".
As (methyl) acrylate for the monomeric unit for being used to form acrylic polymer, such as can enumerate： (methyl) alkyl acrylate, (methyl) acrylate base ester, (methyl) benzyl acrylate etc. contain alkyl (methyl) propylene Acid esters.As (methyl) alkyl acrylate, such as can enumerate：The methyl ester of (methyl) acrylic acid, ethyl ester, propyl Ester, isopropyl esters, butyl ester, isobutyl, sec-butyl ester, tertiary butyl ester, amyl ester, isoamyl base ester, hexyl ester, heptyl ester, Octyl ester, 2- ethylhexyls, isooctyl acrylate, nonyl ester, decyl ester, isodecyl base ester, hendecane base ester, dodecyl ester are (i.e. Lauryl Ester), tridecane base ester, tetradecane base ester, cetyl ester, stearyl and eicosane base ester.As (methyl) Acrylate base ester, such as the cyclopentyl ester and cyclohexyl ester of (methyl) acrylic acid can be enumerated.As (methyl) propylene Sour aryl ester, such as can enumerate：(methyl) phenyl acrylate and (methyl) benzyl acrylate.As being used to form third (methyl) acrylate of the monomeric unit of alkene acids polymers can use a kind of (methyl) acrylate, can also use Two kinds or more (methyl) acrylate.As (methyl) acrylate for the monomeric unit for being used to form acrylic polymer, Among the above, (methyl) alkyl acrylate that the carbon number of optimizing alkyl is 10 or more, more preferable (methyl) lauryl acrylate. In addition, in terms of making adhesive phase 12 suitably show dependent on the fundamental characteristics such as adhesiveness of (methyl) acrylate, use In formed acrylic polymer whole monomer components in (methyl) acrylate ratio be preferably 40 mass % or more, More preferably 60 mass % or more.
Acrylic polymer can include from can be with (methyl) propylene to be modified its cohesive force, heat resistance etc. The monomeric unit of other monomers of acid esters copolymerization.As such other monomers, such as can enumerate：Carboxyl group-containing monomer, acid Anhydride monomer, contains glycidyl monomer, monomer containing sulfonic group, phosphorous acid-based monomers, acrylamide and propylene at hydroxyl monomer Nitrile etc. contains monomer.As carboxyl group-containing monomer, such as can enumerate：Acrylic acid, methacrylic acid, (methyl) acrylic acid Carboxyethyl, (methyl) acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid and crotonic acid.As anhydride monomers, such as Maleic anhydride and itaconic anhydride can be enumerated.As hydroxyl monomer, such as can enumerate：(methyl) acrylic acid 2- hydroxyl second Ester, (methyl) acrylic acid 2- hydroxy-propyl esters, (methyl) acrylic acid 4- hydroxybutyls ester, (methyl) acrylic acid 6- hydroxyl hexyls Ester, (methyl) acrylic acid 8- hydroxy octyls ester, (methyl) acrylic acid 10- hydroxydecyl methacrylates, (methyl) acrylate 12- hydroxyl moons Osmanthus base ester and (methyl) acrylic acid (4- Hydroxymethyl-cyclo-hexyls) methyl esters.As containing glycidyl monomer, such as can enumerate Go out：(methyl) glycidyl acrylate and (methyl) acrylic acid methylglycidyl esters.As monomer containing sulfonic group, such as can To enumerate：Styrene sulfonic acid, allyl sulphonic acid, 2- (methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide third Sulfonic acid, (methyl) acrylic acid sulfopropyl ester and (methyl) propane sulfonic acid.As phosphorous acid-based monomers, such as can be with It enumerates：2- hydroxylethyl acyl phosphates.As other co-polymerized monomers for acrylic polymer, can make With a kind of monomer, two kinds or more monomers can also be used.Above-mentioned acrylic polymer includes from 10 or more carbon number Alkyl (methyl) alkyl acrylate unit (Unit the 1st) when, preferably simultaneously comprising derive from (methyl) acrylic acid 2- The unit (Unit the 2nd) of hydroxyl ethyl ester.In such acrylic polymer, Unit the 1st is excellent relative to the molar ratio of Unit the 2nd It is selected as 1 or more, more preferably 3 or more, further preferably 5 or more.In addition, the molar ratio is preferably 40 or less, more preferably It is 35 or less, further preferably 30 or less.
Acrylic polymer can include from can be with (first to form cross-linked structure in its polymer backbone Base) the monomer components copolymerization such as acrylate multi-functional monomer monomeric unit.As such multi-functional monomer, such as It can enumerate：Hexylene glycol two (methyl) acrylate, (poly-) ethylene glycol two (methyl) acrylate, two (first of (poly-) propylene glycol Base) acrylate, neopentyl glycol two (methyl) acrylate, pentaerythrite two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) acrylate, dipentaerythritol six (methyl) acrylate, epoxy (methyl) Acrylate (i.e. poly epihydric alcohol base (methyl) acrylate), polyester (methyl) acrylate and carbamate (methyl) Acrylate.As the multi-functional monomer for acrylic polymer, a kind of multi-functional monomer can be used, it can also Use two kinds or more multi-functional monomers.The multi-functional monomer being used to form in whole monomer components of acrylic polymer Ratio in terms of making adhesive phase 12 suitably show dependent on the fundamental characteristics such as adhesiveness of (methyl) acrylate, Preferably 40 mass % or less, more preferably 30 mass % or less.
The starting monomer for being used to form it can polymerize by acrylic polymer to be obtained.As polymerization, such as It can enumerate：Polymerisation in solution, emulsion polymerization, bulk polymerization and suspension polymerisation.From use cutting belt 10 and/or cutting chip From the perspective of the high level of cleanliness of the manufacturing method for semiconductor device of bonding film X, preferably cutting belt 10 and/or cutting chip Low molecular weight substance in the adhesive phase 12 of bonding film X is less, and the number-average molecular weight of acrylic polymer is preferably 10 Ten thousand or more, 200,000~3,000,000 are more preferably.
Adhesive phase 12 and/or its adhesive is used to form in order to improve the base polymers such as acrylic polymer Number-average molecular weight, such as external crosslinker can be contained.As for being reacted with base polymers such as acrylic polymers and The external crosslinker for forming cross-linked structure, can enumerate：Polyisocyanate compound, epoxide, polyol compound (polynary phenol system compound etc.), aziridine cpd and melamine series crosslinking agent.Adhesive phase 12 and/or it is used to form it Adhesive in the content of external crosslinker relative to 100 mass parts of base polymer be preferably 5 below mass part, more preferable For 0.1~5 mass parts.
As being used to form the above-mentioned radiation polymerizable monomer ingredient of Radiation curing adhesive, such as can enumerate Go out：Carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) propylene Acid esters, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol six (methyl) acrylate and 1,4- butanediols two (methyl) acrylate.As being used to form Radiation curing adhesive Above-mentioned radiation polyreactive oligomers ingredient, such as can enumerate：Carbamate system, polyether system, Polyester, makrolon The various oligomer such as system, polybutadiene system, the substance of molecular weight 100~30000 or so is suitable.Radiation curable bonds The monomer component of radiation polymerism in agent, the total content of oligomer ingredient are in the bonding that can make to be formed by adhesive phase 12 Power determines in the range of suitably reducing, relative to the base polymers such as acrylic polymer 100 mass parts, for example, 5~ 500 mass parts, preferably 40~150 mass parts.In addition, the Radiation curing adhesive as addition type, such as can make The substance disclosed in Japanese Unexamined Patent Application 60-196956 bulletins.
As the Radiation curing adhesive in adhesive phase 12, such as can also enumerate：Included in polymer side In chain, main polymer chain, main polymer chain end have radiation polymerism the functional groups such as carbon-to-carbon double bond base polymer Inherent type Radiation curing adhesive.Such inherence type Radiation curing adhesive is inhibiting to be formed by adhesive It is suitable in terms of the undesirable ongoing change for moving caused adhesion characteristic by low molecular weight compositions in layer 12.
As base polymer contained in inherent type Radiation curing adhesive, preferably made with acrylic polymer For basic framework.As the acrylic polymer as such basic framework, above-mentioned acrylic polymer may be used. As the method for the carbon-to-carbon double bond for importing radiation polymerism to acrylic polymer, such as following side can be enumerated Method：The copolymerization of the starting monomer comprising the monomer with defined functional group (the 1st functional group) is set to obtain acrylic polymer Afterwards, make that there is energy and react between the 1st functional group and the defined functional group (the 2nd functional group) being bonded and radiation polymerization Property carbon-to-carbon double bond compound maintain carbon-to-carbon double bond radiation polymerism in the state of with acrylic polymer carry out Condensation reaction or addition reaction.
As the combination of the 1st functional group and the 2nd functional group, such as can enumerate：Carboxyl and epoxy group, epoxy group and carboxylic Base, carboxyl and '-aziridino, '-aziridino and carboxyl, hydroxyl and isocyanate group, isocyanate group and hydroxyl.These combinations In, from the viewpoint of the easy degree of reactive tracing, the combination of hydroxyl and isocyanate group, the group of isocyanate group and hydroxyl Conjunction is suitable.In addition, the technical difficulty for making the polymer with isocyanate group with high reactivity is high, from acrylic polymer From the perspective of the easy degree for closing making or the acquisition of object, above-mentioned 1st functional group of acrylic polymer side be hydroxyl and The case where above-mentioned 2nd functional group is isocyanate group is preferably.In this case, as there is radiation polymerism simultaneously Carbon-to-carbon double bond and as the 2nd functional group isocyanate group isocyanate compound, i.e. radiation polymerism containing unsaturation Isocyanation closes object, such as can enumerate：Methacryloyl isocyanate, 2- methacryloxyethyls Isocyanates (MOI) and isopropenyl-bis (alpha, alpha-dimethylbenzyl) based isocyanate.It is imported in above-mentioned acrylic polymer And/or addition is when having isocyanate compound containing unsaturated functional group, isocyanate compound containing unsaturated functional group relative to The molar ratio of unit (Unit the 2nd) in the acrylic polymer from (methyl) acrylic acid 2- hydroxyl ethyl esters is preferably 0.1 or more, it is more preferably 0.2 or more, further preferably 0.3 or more.In addition, comprising being used to form in acrylic In object the acrylic polymer of addition compound product made of addition isocyanate compound containing unsaturated functional group and containing unsaturation Isocyanation closes in the response composite of object, and isocyanate compound containing unsaturated functional group is relative to acrylic compounds The molar ratio of the unit (Unit the 2nd) from (methyl) acrylic acid 2- hydroxyl ethyl esters of polymer is preferably 2 or less, more preferably It is 1.5 or less, further preferably 1.3 or less.
Radiation curing adhesive in adhesive phase 12 preferably comprises Photoepolymerizationinitiater initiater.Cause as photopolymerization Agent, such as can enumerate：α -one alcohol based compound, acetophenone based compound, benzoin ether based compound, ketal system chemical combination Object, aromatic sulfonyl based compound, photolytic activity oxime compound, benzophenone based compound, thioxanthones based compound, camphor Quinone, halogenated ketone, acylphosphine oxide and acyl phosphonate.As α -one alcohol based compounds, such as can enumerate：4- (2- hydroxyls Ethyoxyl) phenyl (2- hydroxyl -2- propyl) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, 2- methyl -2- hydroxypropiophenonepreparations and 1- hydroxycyclohexylphenylketones.As acetophenone based compound, such as can enumerate：Methoxyacetophenone, 2,2- dimethoxies Base -1,2- diphenylethane -1- ketone, 2,2- diethoxy acetophenones and 2- methyl-1s-[4- (methyl mercapto)-phenyl] -2- morpholines For propane -1.As benzoin ether based compound, such as can enumerate：Benzoin ethyl ether, benzoin isopropyl ether and fennel Fragrant acyloin methyl ether.As ketal based compound, such as benzil dimethyl ketal can be enumerated.As aromatic sulfonyl Based compound, such as 2- naphthalene sulfonyl chlorides can be enumerated.As photolytic activity oxime compound, such as can enumerate：1- phenyl- 1,2- propanedione -2- (O- ethoxy carbonyls) oxime.As benzophenone based compound, such as can enumerate：Benzophenone, benzene Formylbenzoate and 3,3'- dimethyl -4- methoxy benzophenones.As thioxanthones based compound, such as can enumerate Go out：Thioxanthones, 2-chlorothioxanthone, 2- methyl thioxanthones, 2,4- dimethyl thioxanthones, isopropyl thioxanthone, 2,4- dichloro thioxanthenes Ketone, 2,4- diethyl thioxanthones and 2,4- diisopropylthioxanthones.Light in the Radiation curing adhesive of adhesive phase 12 The content of polymerization initiator is such as 0.05~20 mass relative to 100 mass parts of the base polymers such as acrylic polymer Part.
Above-mentioned thermal expansion type adhesive in adhesive phase 12 (is sent out to contain the ingredient for foaming, expanding by heating Infusion, heat-expandable microsphere etc.) adhesive when, as foaming agent, various inorganic system's foaming agents and organic system can be enumerated Foaming agent as heat-expandable microsphere, such as can enumerate：The object of expansion by being easy gasification by heating is sealed in shell The microballoon of the composition of matter.As inorganic system's foaming agent, such as can enumerate：Ammonium carbonate, ammonium hydrogen carbonate, sodium bicarbonate, nitrous Sour ammonium, sodium borohydride and Azide species.As organic system foaming agent, such as can enumerate：F-11, dichloro It is the azo compounds such as the chlorine such as one fluoromethane fluoric ether, azobis isobutyronitrile, azodicarbonamide, Barium azodicarboxylate, right The hydrazines such as toluene sulfonyl hydrazide, diphenyl sulfone -3,3'- disulfonyl hydrazides, 4,4'- oxos bis- (benzene sulfonyl hydrazides), allyl bis- (sulfohydrazides) Semicarbazides based compound, the 5- such as based compound, p-toluenesulfonyl semicarbazides, 4,4'- oxos bis- (benzenesulfonylamino ureas) Three azole compounds and the N such as quinoline base -1,2,3,4- thiatriazoles, N'- dinitrosopentamethylene tetramines, N, N'- dimethyl - The N- nitroso based compounds such as N, N'- dinitrosoterephthalamine.As being used to form, thermal expansivity as described above is micro- The substance of ball expanded by being easy gasification by heating, such as can enumerate：Iso-butane, propane and pentane.By using solidifying Poly- method, interfacial polymerization etc. enclose the substance expanded by being easy gasification by heating in shell forming material, and it is swollen can to make heat Swollen property microballoon.As shell forming material, the substance for showing hot melt property, the thermal expansion by enclosing substance can be used The substance that can be ruptured.As such substance, such as can enumerate：Vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, Polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, Vingon and polysulfones.
As the non-reduced type adhesive of above-mentioned bonding force, such as can enumerate：The pre- irradiation with radiation that first passes through makes viscous The adhesive for the form that Radiation curing adhesive described in resultant force reduction type adhesive has cured (cross by irradiation with radiation Radiation curing adhesive), Pressuresensitive Adhesive etc..Although the Radiation curing adhesive that irradiation with radiation is crossed passes through spoke Radiation exposure and bonding force reduce, and still, according to the content of component of polymer, remain to show due to the component of polymer Adhesiveness, can be played in defined occupation mode can be used to bond the bonding force for keeping adherend.Present embodiment is glued In mixture layer 12, a kind of non-reduced type adhesive of bonding force can be used, two kinds or more the non-reduced types of bonding force can also be used Adhesive.It is formed by the non-reduced type adhesive of bonding force furthermore, it is possible to be that adhesive phase 12 is whole, can also be adhesive phase 12 A part formed by the non-reduced type adhesive of bonding force.Can be adhesive for example, when adhesive phase 12 has single layer structure Layer 12 is whole to be formed by the non-reduced type adhesive of bonding force, can also be the predetermined portion in adhesive phase 12 by the non-drop of bonding force Low profile adhesive is formed, other positions are formed by bonding force reduction type adhesive.In addition, adhesive phase 12 has stepped construction When, can form whole layers of stepped construction to be formed by the non-reduced type adhesive of bonding force, can also be in stepped construction A part of layer is formed by the non-reduced type adhesive of bonding force.
On the other hand, as the Pressuresensitive Adhesive in adhesive phase 12, can be used for example with acrylic polymer Acrylic adhesives, elastomeric adhesive as basic polymer.Adhesive phase 12 contains acrylic adhesives conduct When Pressuresensitive Adhesive, the acrylic polymer for becoming the base polymer of the acrylic adhesives is preferably comprised and is derived from The monomeric unit of (methyl) acrylate monomeric unit most as mass ratio.As such acrylic polymer, Such as acrylic polymer described in Radiation curing adhesive can be enumerated.
It adhesive phase 12 and/or is used to form in its adhesive, on the basis of above-mentioned each ingredient, can also contain and hand over Join colorants such as accelerating agent, tackifier, anti-aging agent, pigment, dyestuff etc..Colorant can be coloured by irradiation with radiation Compound.As such compound, such as leuco dye can be enumerated.
Adhesive phase 12 is forming and is having preferred 32mJ/m in the adhesive surface 12a at the interface of adhesive layer 202Below, more It is preferred that 30mJ/m2Below, further preferred 28mJ/m2Surface free energy (the 2nd surface free energy) below, alternatively, can have It is preferred that 32mJ/m2Below, more preferable 30mJ/m2Below, further preferred 28mJ/m2(the 2nd surface is certainly for surface free energy below By energy).When adhesive phase 12 is the adhesive phases of curing types such as radiation-curable adhesive layer, the adhesive phase 12 after solidification The 2nd surface free energy be preferably 32mJ/m2Below, it is more preferably 30mJ/m2Below, it is more preferably 28mJ/m2Below. In addition, adhesive phase 12 is forming and is having preferred 15mJ/m in the adhesive surface 12a at the interface of adhesive layer 202Above, more excellent Select 18mJ/m2Above, further preferred 20mJ/m2Above surface free energy (the 2nd surface free energy), alternatively, can have excellent Select 15mJ/m2Above, more preferable 18mJ/m2Above, further preferred 20mJ/m2(the 2nd surface is free for above surface free energy Can).When adhesive phase 12 is the adhesive phase of curing types such as radiation-curable adhesive layer, adhesive phase 12 after solidification 2nd surface free energy is preferably 15mJ/m2Above, it is more preferably 18mJ/m2Above, it is more preferably 20mJ/m2More than.It is right It, can be by the acrylic polymer that is used to form in adhesive phase 12 in the surface free energy of the adhesive surface 12a of adhesive phase 12 Adjustment of composition of various monomers of base polymers such as object etc. are closed to carry out.
The thickness of adhesive phase 12 is preferably 1~50 μm, more preferably 2~30 μm, further preferably 5~25 μm.This Being formed in when for example adhesive phase 12 includes Radiation curing adhesive for sample obtains the adhesive phase 12 in radiation curing It is suitable in terms of the balance of the front and back bonding force to adhesive layer 20.
The adhesive layer 20 of cutting die bonding film X has both the bonding for showing Thermocurable as chip engagement The function of agent and adhesive function for keeping the frames component such as the workpiece such as semiconductor crystal wafer and ring frame.In present embodiment, use There can be the heat comprising heat-curing resin and as such as Binder Composition in the bonding bonding agent for forming adhesive layer 20 The composition of plastic resin, it is possible to have comprising with the heat of Thermocurable functional group that can be reacted and be bonded with curing agent The composition of plastic resin.The bonding bonding agent for being used to form adhesive layer 20 has comprising the thermoplastic with Thermocurable functional group When the composition of property resin, which need not further include heat-curing resin (epoxy resin etc.).Such bonding Oxidant layer 20 can have single layer structure, it is possible to have multilayered structure.
When adhesive layer 20 includes thermoplastic resin and heat-curing resin, as the heat-curing resin, such as can be with It enumerates：Epoxy resin, phenolic resin, amino resins, unsaturated polyester resin, polyurethane resin, organic siliconresin and thermosetting The property changed polyimide resin.When forming adhesive layer 20, can use a kind of heat-curing resin, can also use two kinds with Upper heat-curing resin.For the ionic impurity corroded with the semiconductor chip that may result in chip coalesced object etc. The reasons why poor tendency, as heat-curing resin, preferred epoxy contained in adhesive layer 20.In addition, conduct The curing agent of epoxy resin, preferably phenolic resin.
As epoxy resin, such as can enumerate：Bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenation Bisphenol A-type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol novolak type, ortho cresol novolak type, trihydroxy phenyl The ring of methane type, four hydroxy phenyl ethane types, hydantoins type, triglycidyl group isocyanurate type and glycidic amine type Oxygen resin.Phenolic resin varnish type epoxy resin, biphenyl type epoxy resin, trihydroxy benzene methylmethane type epoxy resin and four hydroxyphenyls Ethane type epoxy resin is imbued with the reactivity with the phenolic resin as curing agent, and excellent heat resistance, it is therefore preferable that conduct Epoxy resin contained in adhesive layer 20.
For the phenolic resin that can be worked as the curing agent of epoxy resin, such as can enumerate：Phenolic varnish type Phenolic resin, resol type phenol resin and poly- to the polyoxies styrene such as oxygen styrene.As novolak phenolics, example It can such as enumerate：Phenol resol resins, phenol aralkyl resin, cresol novolac resin, tert-butyl phenol phenolic aldehyde Varnish gum and nonyl phenol novolac resin.It, can for the phenolic resin that can be worked as the curing agent of epoxy resin To use a kind of phenolic resin, two kinds or more phenolic resin can also be used.Phenol resol resins, phenol aralkyl resin It is reliable with the connection that can improve the bonding agent in the curing agent as the epoxy resin as chip engagement bonding agent The tendency of property, it is therefore preferable that the curing agent as epoxy resin contained in adhesive layer 20.
In adhesive layer 20, from the viewpoint of so that the curing reaction of epoxy resin and phenolic resin is fully carried out, with this Hydroxyl in phenolic resin reaches preferably 0.5~2.0 equivalent, more preferably relative to 1 equivalent of epoxy group in epoxy resin ingredient The amount of 0.8~1.2 equivalent includes phenolic resin.
As thermoplastic resin contained in adhesive layer 20, such as can enumerate：It is natural rubber, butyl rubber, different Pentadiene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate The polyamide resins such as copolymer, polybutadiene, polycarbonate resin, thermoplastic polyimide resin, 6- nylon, 6,6- nylon The saturated polyester resins such as fat, phenoxy resin, acrylic resin, PET, PBT, polyamide-imide resin and fluororesin.? 20 aspect of adhesive layer is formed, a kind of thermoplastic resin can be used, two kinds or more thermoplastic resins can also be used.As viscous Connect thermoplastic resin contained in oxidant layer 20, for ionic impurity is few and heat resistance is high and it is easy to ensure that being based on adhesive layer 20 Joint reliability the reasons why, preferred acrylic resin.In addition, from take into account aftermentioned adhesive layer 20 to the room temperature of ring frame and For the stickiness at temperature near it with from the perspective of residue when preventing from removing, adhesive layer 20 preferably comprises glass transition Principal component of the polymer that temperature is -10~10 DEG C as thermoplastic resin.The principal component of thermoplastic resin refers in thermoplasticity The resin component of maximum mass ratio is accounted in resin component.
For the glass transition temperature of polymer, the glass transition temperature found out based on following Fox formulas can be used (theoretical value).Fox formulas are the homopolymer of the glass transition temperature Tg and each composition monomer in the polymer of polymer The relational expression of glass transition temperature Tg i.In following Fox formulas, Tg indicates that the glass transition temperature (DEG C) of polymer, Wi indicate The weight percent of the monomer i of the polymer is constituted, Tgi indicates the glass transition temperature (DEG C) of the homopolymer of monomer i.Homopolymerization The glass transition temperature of object can use literature value, such as " 7 coating of new peak molecular library is got started with synthetic resin " (Bei Gang associations Three write, and macromolecule prints and publishes meeting, nineteen ninety-five), in " acrylate goods catalogue (1997 year version) " (Mitsubishi Rayon Co., Ltd) List the glass transition temperature of various homopolymers.On the other hand, for the glass transition temperature of the homopolymer of monomer, The method specifically recorded in Japanese Unexamined Patent Publication 2007-51271 bulletins can be utilized to find out.
Fox formulas 1/ (273+Tg)=Σ [Wi/ (273+Tgi)]
The acrylic resin contained as thermoplastic resin in adhesive layer 20, which preferably comprises, derives from (methyl) third The monomeric unit of the olefin(e) acid ester main monomer unit most as mass ratio.As such (methyl) acrylate, such as The acrylic with an ingredient in the Radiation curing adhesive as 12 formation of adhesive phase can be used Same (methyl) acrylate of substance described in object.The acrylic compounds contained as thermoplastic resin in adhesive layer 20 Resin can also include from can be with the monomeric unit of other monomers of (methyl) acrylic ester copolymer.As such other Monomer component, such as can enumerate：Carboxyl group-containing monomer, hydroxyl monomer, contains glycidyl monomer, contains sulphur anhydride monomers Acid-based monomers, phosphorous acid-based monomers, acrylamide, acrylonitrile etc. containing monomer, various multi-functional monomers, it is specific and Speech, can use the acrylic polymer with an ingredient in the Radiation curing adhesive as 12 formation of adhesive phase It closes in object as can be with the same substance of substance of other monomers of (methyl) acrylic ester copolymer record.From making adhesive layer 20 From the perspective of realizing high cohesion, the acrylic resin contained in adhesive layer 20 is preferably (methyl) acrylate (especially the carbon number of alkyl be 4 (methyl) alkyl acrylates below), carboxyl group-containing monomer, nitrogen atom monomer with it is multifunctional Property monomer (especially poly epihydric alcohol base system polyfunctional monomer) copolymer, more preferably ethyl acrylate, butyl acrylate, The copolymer of acrylic acid, acrylonitrile and poly epihydric alcohol base (methyl) acrylate.
The content ratio of heat-curing resin in adhesive layer 20 is suitably shown as heat from making adhesive layer 20 From the perspective of the function of curing type bonding agent, preferably 5~60 mass %, more preferably 10~50 mass %.
When adhesive layer 20 includes the thermoplastic resin with Thermocurable functional group, as the thermoplastic resin, such as The acrylic resin of functional group containing Thermocurable can be used.It is used to form the acrylic resin of functional group containing Thermocurable Acrylic resin is preferably comprised from the monomeric unit of (methyl) acrylate principal monomer most as mass ratio Unit.As such (methyl) acrylate, it can be used for example and consolidate in the radiation as 12 formation of adhesive phase Same (methyl) acrylate of substance described in the acrylic polymer of one ingredient of change type adhesive.Another party Face as being used to form the Thermocurable functional group of the acrylic resin of functional group containing Thermocurable, such as can enumerate contracting Water glyceryl, carboxyl, hydroxyl and isocyanate group.Wherein it is possible to suitable for using glycidyl and carboxyl.That is, as containing heat Curability functional group acrylic resin suitable can use resinoid containing glycidyl acrylic, class containing carboxy acrylic Resin.In addition, the curing agent as the acrylic resin of functional group containing Thermocurable, can be used for example as being sometimes considered as The substance that the external crosslinker of one ingredient of the Radiation curing adhesive of 12 formation of adhesive phase is recorded.Containing heat cure Property functional group acrylic resin in Thermocurable functional group when being glycidyl can be suitable for using as curing agent Above-mentioned various phenolic resin can be used for example in polynary phenol system compound.
For the adhesive layer 20 before curing for chip engagement, in order to realize a degree of degree of cross linking, For example, it is preferable to will react and be bonded more with functional group of the molecule chain end of above-mentioned resin etc. contained in adhesive layer 20 Functionality compounds are compounded in as crosslinking agent in advance in adhesive layer formation resin combination.Such be formed in makes bonding It is suitable that oxidant layer 20, which improves the aspect of adhesion properties at high temperature and seeks the improvement aspect of heat resistance,.As in this way Crosslinking agent, such as polyisocyanate compound can be enumerated.As polyisocyanate compound, such as can enumerate： Toluene di-isocyanate(TDI), methyl diphenylene diisocyanate, paraphenylene diisocyanate, 1,5- naphthalene diisocyanates and polyalcohol With the addition compound product of diisocyanate.For the content of the crosslinking agent in adhesive layer formation resin combination, relative to tool 100 mass parts of resin for having the above-mentioned functional group that can be reacted and be bonded with the crosslinking agent, adhesive layer 20 is formed by from raising Cohesive force from the perspective of, it is more than preferably 0.05 mass parts, from improve be formed by adhesive layer 20 bonding force sight Point sets out, and preferably 7 is below mass part.In addition, as the crosslinking agent in adhesive layer 20, it can be other more by epoxy resin etc. Functionality compounds are applied in combination with polyisocyanate compound.
The content ratio of above such high molecular weight components in adhesive layer 20 is preferably 50~100 mass %, more Preferably 50~80 mass %.High molecular weight components refer to the ingredient of 10000 or more weight average molecular weight.Such be formed in is sought Adhesive layer 20 at the room temperature of aftermentioned ring frame and its neighbouring temperature stickiness and prevent residue when stripping from taking into account Aspect is preferred.In addition, adhesive layer 20 may be embodied in the liquid resin for liquid at 23 DEG C.Adhesive layer 20 includes this When the liquid resin of sample, the liquid resinous content ratio in adhesive layer 20 is preferably 1~10 mass %, more preferably 1 ~5 mass %.Such be formed in seeks adhesive layer 20 to the fitting at the room temperature of aftermentioned ring frame and its neighbouring temperature Property and prevent stripping when residue take into account aspect be preferred.
Adhesive layer 20 can contain filler.By being compounded filler in adhesive layer 20, adhesive layer 20 can be adjusted The physical property such as elasticity modulus, electric conductivity, the thermal conductance such as storage tensile modulus.As filler, inorganic filler can be enumerated and had Machine filler, particularly preferred inorganic filler.As inorganic filler, such as can enumerate：Aluminium hydroxide, magnesium hydroxide, calcium carbonate, Magnesium carbonate, calcium silicates, magnesium silicate, calcium oxide, magnesia, aluminium oxide, aluminium nitride, aluminium borate whisker, boron nitride, crystalline silica The metal simple-substances such as silicon, amorphous silica and aluminium, gold, silver, copper, nickel, alloy, amorphous carbon black, graphite.Filler can be with With spherical, needle-shaped, laminar etc. variously-shaped.As the filler in adhesive layer 20, a kind of filler can be used, it can also Use two kinds or more fillers.In terms of adhesive layer 20 is to the stickiness of ring frame in ensuring aftermentioned cooling extension process, glue It is preferably 30 mass % or less, more preferably 25 mass % or less to connect the filler content ratio in oxidant layer 20.
The average grain diameter of filler when adhesive layer 20 is containing filler is preferably 0.005~10 μm, is more preferably 0.005 ~1 μm.The average grain diameter of the filler, which is 0.005 μm or more is formed in, makes the realization of adhesive layer 20 glue semiconductor crystal wafer etc. The high wettability of object, cementability aspect are suitable.The average grain diameter of the filler is 10 μm and below is formed in adhesive layer 20 It is suitable in terms of obtaining sufficient filler additive effect and ensuring heat resistance.The average grain diameter of filler uses such as light The particle size distribution meter (trade name " LA-910 ", Horiba Ltd make) of degree formula is found out.
Adhesive layer 20 can include other ingredients as needed.As other ingredients, such as can enumerate：It is fire-retardant Agent, silane coupling agent and ion trap agent.As fire retardant, such as antimony trioxide, antimony pentaoxide and bromination can be enumerated Epoxy resin.As silane coupling agent, such as can enumerate：β-(3,4- epoxycyclohexyls) ethyl trimethoxy silane, γ- Glycidoxypropyltrime,hoxysilane and γ-glycidoxypropyl diethoxy silane.As ion trap Agent, such as can enumerate：Hydrotalcite, bismuth hydroxide, the aqua oxidation antimony (such as " IXE- of Toagosei Co., Ltd 300 "), the basic zirconium phosphate (such as " IXE-100 " of Toagosei Co., Ltd) of specific structure, magnesium silicate (such as consonance chemistry Industrial Co., Ltd " Kyoward 600 ") and alumina silicate (such as Kyowa Chemical Industry Co., Ltd " Kyoward 700").The compound that complex compound can be formed between metal ion can also be used as ion trap agent use.As suchization Object is closed, such as can be enumerated：Three azole compounds, four azole compounds and bipyridyl based compound.Wherein, from metal From the perspective of the stability of the complex compound formed between ion, preferably three azole compounds.As such triazole system chemical combination Object, such as can enumerate：L, 2,3 triazole, 1- { bis- (2- ethylhexyls) amino methyls of N, N- } benzotriazole, carboxyl Benzotriazole, 2- (2- hydroxy-5-methyl bases phenyl) benzotriazole, 2- (2- hydroxyl -3,5- di-tert-butyl-phenyls) -5- chlorobenzenes and three Azoles, 2- (2- hydroxyl -3- tertiary butyl -5- aminomethyl phenyls) -5- chlorobenzotriazoles, 2- (2- hydroxyl -3,5- di-tert-pentyl-phenyls) benzene And triazole, 2- (2- hydroxyl -5- t-octyls phenyl) benzotriazole, 6- (2 benzotriazole base) -4- t-octyl -6'- tertiary butyls - 4'- methyl -2,2' methylene bis phenol, 1- (2,3- dihydroxypropyls) benzotriazole, 1- (1,2- dicarboxyls diethyl) benzo three Azoles, 1- (2- ethylhexylaminos methyl) benzotriazole, bis- tertiary pentyl -6- of 2,4- { (H- benzotriazole -1- bases) methyl } phenol, 2- (2- hydroxyl -5- tert-butyl-phenyls) -2H- benzotriazole, octyl -3- [3- tertiary butyl-4-hydroxies -5- (the chloro- 2H- benzos of 5- three Azoles -2- bases) phenyl] propionic ester, 2- ethylhexyls -3- [3- tertiary butyl-4-hydroxies -5- (the chloro- 2H- benzotriazole -2- bases of 5-) benzene Base] propionic ester, 2- (2H- benzotriazole -2- bases) -6- (1- methyl-1s-phenylethyl) -4- (1,1,3,3- tetramethyl butyls) benzene Phenol, 2- (2H- benzotriazole -2- bases) -4-TBP, 2- (2- hydroxy-5-methyl bases phenyl) benzotriazole, 2- (2- hydroxyls - 5- t-octyls phenyl)-benzotriazole, 2- (3- tertiary butyl -2- hydroxy-5-methyl bases phenyl) -5- chlorobenzotriazoles, 2- (2- hydroxyls - 3,5- di-tert-pentyl-phenyls) benzotriazole, 2- (2- hydroxyl -3,5- di-tert-butyl-phenyls) chloro- benzotriazole of -5-, 2- [2- hydroxyls Base -3,5- two (1,1- dimethyl benzyls) phenyl] -2H- benzotriazole, 2,2' methylene bis [6- (2H- benzotriazole -2- Base] -4- (1,1,3,3- tetramethyl butyls) phenol], 2- [bis- (bis (alpha, alpha-dimethylbenzyl) base) phenyl of 2- hydroxyls -3,5-] -2H- benzos Triazole and methyl -3- [3- (2H- benzotriazole -2- bases) -5- tert-butyl-hydroxy phenyls] propionic ester.In addition, hydroquinone Hydroxy-containing compounds, which can also be used as ion trap agent, as defined in compound, hydroxy-anthraquione compound, polyphenol compound etc. makes With.As such hydroxy-containing compounds, specific examples thereof include：1,2- benzenediols, alizarin, 1,5- dihydroxy anthraquinones, tannic acid, Gallic acid, gallicin, pyrogallol etc..As above such other ingredients, a kind of ingredient can be used, also may be used To use two kinds or more ingredients.
Range of the thickness of adhesive layer 20 at such as 1~200 μm.The upper limit of the thickness is preferably 100 μm, is more preferably 80μm.The lower limit of the thickness is preferably 3 μm, more preferably 5 μm.
The surface free energy (the 1st surface free energy) with the face 20b at the interface of adhesive phase 12 is formed in adhesive layer 20 Preferably 30mJ/m2Above, it is more preferably 31mJ/m2Above, it is more preferably 32mJ/m2More than.In addition, the 1st surface is certainly By that can be preferably 45mJ/m2Below, it is more preferably 43mJ/m2Below, it is more preferably 40mJ/m2Below.
In disbonded test of the adhesive layer 20 under conditions of 23 DEG C, 180 ° of peel angle and tensile speed 10mm/ minutes 0.1N/10mm or more, more preferable 0.3N/10mm or more, further preferred 0.5N/10mm or more are shown to SUS planes 180 ° of peel adhesions.In addition, being shown preferably to SUS planes in the disbonded test of adhesive layer 20 under the same conditions 20N/10mm or less, more preferable 10N/10mm 180 ° of peel adhesions below.It, can be with for such 180 ° of peel adhesions It is measured using cupping machine (trade name " Autograph AGS-J ", Shimadzu Scisakusho Ltd's system).For the survey Fixed coupons can manufacture as follows.First, the size of width 10mm × length 100mm is cut from cutting die bonding film X , the laminated body of stepped construction with base material 11 and adhesive phase 12 and adhesive layer 20.Adhesive phase 12 is solid for ultraviolet light When change type, for cutting die bonding film X, 350mJ/cm is irradiated to adhesive phase 12 from 11 side of base material2Ultraviolet light to After so that adhesive phase 12 is cured, cutting for the laminated body is carried out.Then, by making reciprocal 1 pressure of the roller of 2kg at 60 DEG C Connecing operation makes 20 side of adhesive layer of laminated body fit in Silicon Wafer, and thereafter, which is placed 2 minutes at 60 DEG C.It connects It, removes adhesive phase 12 and base material 11 from the adhesive layer 20 on Silicon Wafer.Then, the bonding on remaining in Silicon Wafer It is bonded facing rubber band (trade name " BT-315 ", Nitto Denko Corp's system) in oxidant layer 20, bonding agent is removed from Silicon Wafer Layer 20 makes adhesive layer 20 be transferred from Silicon Wafer to the facing rubber band.As above operation makes the adhesive layer with facing rubber band Coupons (width 10mm × length 100mm).Fitting from the coupons to the SUS plates as adherend by keeping the roller of 2kg past 1 crimping operation is answered to carry out.
Adhesive layer 20,20 coupons of adhesive layer distance between Initial grip to 80 μm of width 4mm and thickness Stretching storage at 23 DEG C measured under conditions of 5 DEG C/min of 10mm, frequency 10Hz, dynamic strain ± 0.5 μm and heating rate Energy modulus is preferably 100MPa or more, more preferably 500MPa or more, further preferably 1000MPa or more.In addition, bonding agent Storage tensile modulus at layer 20 measure under the same conditions 23 DEG C be preferably 4000MPa or less, more preferably 3000MPa with Under, further preferably 2000MPa or less.For storage tensile modulus, can be based on using measurement of dynamic viscoelasticity device (quotient The name of an article " Rheogel-E4000 ", UBM corporations) Measurement of Dynamic Viscoelasticity that carries out finds out.In the measurement, it will be used as and survey The size for determining the coupons of object is set as width 4mm × length 20mm × 80 μm of thickness, by the first of coupons holding clamp Distance is set as 10mm between beginning fixture, and mode determination is set as stretch mode, and measuring temperature range is set as -30 DEG C~100 DEG C, will Frequency is set as 10Hz, and dynamic strain is set as ± 0.5 μm, will heat up speed and is set as 5 DEG C/min.
In present embodiment, the direction D in the face of cutting die bonding film X, the outer circumference end 20e of adhesive layer 20 are located at Outer circumference end 11e away from the base material 11 in cutting belt 10 and within 12e1000 μm of the outer circumference end of adhesive phase 12, preferably 500 μm with At interior distance.That is, the complete cycle of the outer circumference end 20e of adhesive layer 20 direction D in pellicular front is located at the outer circumference end 11e of base material 11 1000 μm of 1000 μm of inside to outside between, preferably between 500 μm of 500 μm of inside to outside, also, be located at adhesive phase 12 Outer circumference end 12e 1000 μm of 1000 μm of inside to outside between, preferably between 500 μm of 500 μm of inside to outside.Cutting belt 10 And/or the direction D in face has in this composition of substantially the same size its adhesive phase 12 with adhesive layer 20 thereon, Adhesive layer 20 also includes as described above frame component fitting region in the face sides 20a on the basis of workpiece fitting region.
It cuts in die bonding film X, when the adhesive phase 12 of cutting belt 10 is radiation-curable adhesive layer, 23 DEG C And adhesive phase 12 and bonding agent after the radiation curing in T-type disbonded test of the peeling rate under conditions of 300mm/ minutes Peeling force between layer 20 is preferably 0.06N/20mm or more, more preferably 0.1N/20mm or more, further preferably 0.15N/ 20mm or more.The bonding after radiation curing in the T-type disbonded test of 23 DEG C and peeling rate under conditions of 300mm/ minutes Peeling force between oxidant layer 12 and adhesive layer 20 be preferably 0.25N/20mm or less, more preferably 0.23N/20mm or less, into One step is preferably 0.2N/20mm or less.Radiation in the T-type disbonded test of 23 DEG C and peeling rate under conditions of 300mm/ minutes Peeling force between line adhesive phase 12 before curing and adhesive layer 20 is preferably 2N/20mm or more.Such T-type is shelled Separating test, can be come using cupping machine (trade name " Autograph AGS-J ", Shimadzu Scisakusho Ltd's system) into Row.Coupons for the experiment are such as got off making.Firstly, for cutting die bonding film X, from 11 side of base material to adhesive Layer 12 irradiates 350mJ/cm2Ultraviolet light, make adhesive phase 12 cure.Then, in the adhesive layer of cutting die bonding film X 20 sides fitting facing rubber band (trade name " BT-315 ", Nitto Denko Corp's system) then cuts width 50mm × length The coupons of the size of 120mm.
For being used to form the adhesive of adhesive phase 12 and the interface of adhesive layer 20 in cutting die bonding film X 12 surface of layer and 20 surface of adhesive layer, the difference of the arithmetic mean surface roughness (Ra) on two surfaces is preferably 100nm or less.
Cutting die bonding film X can carry slider S as shown in Figure 2.Specifically, can be each cutting chip The form of sheets of the bonding film X with slider S can also be that slider S is strip, is configured with multiple cuttings on it Die bonding film X and slider S wind and are formed as the form of volume.Slider S is thin for the engagement of coating cutting chip The surface of the adhesive layer 20 of film X and the element protected are removed the film when using cutting die bonding film X. As slider S, such as can enumerate：Polyethylene terephthalate (PET) film, polyethylene film, polypropylene are thin Film, the plastic film that surface coating has been carried out with removers such as fluorine system remover, long-chain aliphatic acrylate series stripping agents, stationery Deng.The thickness of slider S is such as 5~200 μm.
It for example can be such as manufacture of getting off with above such cutting die bonding film X constituted.
First, as shown in (a) of Fig. 3, adhesive composite layer C1 is formed on the slider S of strip.Bonding agent group Close adhesive composite that nitride layer C1 can be prepared by will be used to form adhesive layer 20 coated on slider S come shape At.As the painting method of adhesive composite, such as can enumerate：Roll coating, silk screen coating and rotogravure application.
Then, as shown in (b) of Fig. 3, adhesive composition layer C2 is formed on adhesive composite layer C1.Adhesive group It closes the adhesive composition that nitride layer C2 can be prepared by will be used to form adhesive phase 12 and is coated in adhesive composite layer It is formed on C1.As the painting method of adhesive composition, such as can enumerate：Roll coating, silk screen coating and intaglio plate apply It covers.
Then, it on slider S, is handled via the primary heating of adhesive composite layer C1 and adhesive composition layer C2 And form adhesive layer 20' and adhesive phase 12'.In the heat treatment, make two layers of drying as needed, in addition, according to need Make to crosslink reaction two layers.Heating temperature is such as 60~175 DEG C, and heating time is such as 0.5~5 minute.Bonding agent Layer 20' is to process the material for being formed as above-mentioned adhesive layer 20.Adhesive phase 12' is to process to be formed as above-mentioned adhesive phase 12 material.
Then, as shown in (c) of Fig. 3, the crimping fitting base material 11' on adhesive phase 12'.Base material 11' is shape to be processed As the material of above-mentioned base material 11.The base material 11' of resin can utilize the calendering film method, casting method in organic solvent, close The film-forming methods such as inflation extrusion molding, T moulds extrusion molding, coetrusion, dry lamination method in closure system make.After film Film and/or base material 11', as needed implement as defined in surface treatment.In this process, binding temperature is such as 30~50 DEG C, preferably 35~45 DEG C.Laminate pressure (line pressure) is such as 0.1~20kgf/cm, preferably 1~10kgf/cm.Pass through this Process can obtain the strip with the stepped construction of slider S, adhesive layer 20', adhesive phase 12' and base material 11' Sheet body is laminated.
Then, as shown in (d) of Fig. 3, to above-mentioned stacking sheet body implementation make processing knife from the sides base material 11' enter to arrival every Processing (schematically showing off-position with thick line in (d) of Fig. 3) until in vitro S.For example, making stacking sheet body along a side Moved to F with fixed speed, at the same make to configure in the way of it can surround the axle center orthogonal with direction F and be rotated and The surface companion with processing knife of the rotating roller (illustration omitted) of the band processing knife of processing knife of the roller surface with punch press process It is connected to 11 ' the side of base material of stacking sheet body with having regulation extruding force.As a result, disposably processing formed cutting belt 10 (base material 11, Adhesive phase 12) and adhesive layer 20, cutting die bonding film X is formed on partition board S.Then, as shown in (e) of Fig. 3, from Material laminated section on partition board S around removal cutting die bonding film X.
As above operation can manufacture cutting die bonding film X.
In the manufacturing process of semiconductor device, as described above, obtaining the base of the semiconductor chip with adhesive layer On plinth, extension process, the pickup process using cutting die bonding film are carried out sometimes, in the pickup process, it is desirable to be able to Adhesive layer from semiconductor chip of the adhesive phase stripping with adhesive layer, to which Self cleavage band picks up the semiconductor core Piece.The inventors of the present invention obtain discovery below：The adhesive phase 12 and adhesive layer of the cutting die bonding film X of the present invention The difference of above-mentioned 1st and the 2nd surface free energy of 20 interface is 3.5mJ/m2Above, it is preferably 4mJ/m2Above, more preferably 5mJ/m2Above state is suitable for realizing good pickup by pickup process.Specifically, embodiment and comparing as be described hereinafter Shown in example.In the interface of adhesive phase 12 and adhesive layer 20, the surface free energy of the adhesive surface 12a of adhesive phase 12 with it is viscous The difference for connecing the surface free energy of the face 20b of oxidant layer 20 is bigger, and the constituent material of this two interlayer is more difficult to shift.Also, adhesive phase Constituent material between 12 and adhesive layer 20 is not easy transfer and is suitable for that two interlayers is made to realize small peeling force.Adhesive phase 12 with The difference of 1st and the 2nd surface free energy of the interface of adhesive layer 20 is 3.5mJ/m2Above, it is preferably 4mJ/m2Above, more excellent It is selected as 5mJ/m2Above above-mentioned composition is adapted to ensure that the small peeling force between the adhesive phase 12 and adhesive layer 20 makes It is the degree for the good pickup that the semiconductor chip with adhesive layer can be realized by pickup process.
It is suitable for inhibiting the raised cutting die bonding film X of peeling force between adhesive phase 12 and adhesive layer 20 logical Crossing makes adhesive layer 20 realize low elasticity to ensure the bonding force to frame component, so as to be pasted in workpiece with adhesive layer 20 Share on the basis of region includes also the mode in frame component fitting region, with substantially the same size in the direction in pellicular front Design cutting belt 10 and/or its adhesive phase 12 and adhesive layer 20 thereon.Specifically, as set forth above, it is possible to using such as Under design：The outer circumference end 20e in the direction in the face of cutting die bonding film X, adhesive layer 20 is located at away from cutting belt 10 At distance within the outer circumference end 11e of base material 11,1000 μm of the outer circumference end 12e of adhesive phase 12, within preferably 500 μm away from From place.Such cutting die bonding film X is suitable for disposably implementing to be used to form tool by processing such as a punch press process There is the processing of a cutting belt 10 of the stepped construction of base material 11 and adhesive phase 12 and is used to form adhesive layer 20 Processing.Such cutting die bonding film X is suitable for efficiently from the viewpoints such as manufacturing process's number, inhibition manufacturing cost are reduced Ground manufactures.In addition, being formed and two combinations via the stacking of adhesive layer formation composition and adhesive phase formation composition The disposably dry above-mentioned manufacturing method of nitride layer and it is formed separately the manufacturer that adhesive phase and adhesive layer are bonded again later Method is compared, and the peeling force for being easy to cause two interlayer of closely sealed interface in adhesive phase and adhesive layer increases, adhesive phase 12 And the difference of the 1st and the 2nd surface free energy of the interface of adhesive layer 20 is 3.5mJ/m as described above2Above, it is preferably 4mJ/ m2Above, it is more preferably 5mJ/m2Above above-mentioned composition is adapted to ensure that small between the adhesive phase 12 and adhesive layer 20 Peeling force enables the degree that it is the good pickup that the semiconductor chip with adhesive layer is realized by pickup process.
As described above, cutting die bonding film X is adapted for carrying out the semiconductor chip Self cleavage band with adhesive layer 10 good pickup.
Adhesive phase 12 in cutting die bonding film X is constituted as follows as described above：In formation and bonding agent In the adhesive surface 12a at the interface of layer 20, there can be 32mJ/m2Below, more preferable 30mJ/m2Below, further preferred 28mJ/ m2Surface free energy (the 2nd surface free energy) below.This composition the adhesive phase 12 for ensuring to cut die bonding film X with It is suitable in terms of above-mentioned small peeling force between adhesive layer 20.In addition, the structure as follows as described above of adhesive phase 12 At：It is being formed with the adhesive surface 12a at the interface of adhesive layer 20, can have preferred 15mJ/m2Above, more preferable 18mJ/m2 Above, further preferred 20mJ/m2Above surface free energy (the 2nd surface free energy).This composition is for example from in cutting core The medium mode for not generating stripping between adhesive phase 12 and adhesive layer 20 of conveying of chip bonding film X ensures two interlayer Appropriateness bonding force from the perspective of be suitable.
Above-mentioned 1st surface free energy for cutting the adhesive layer 20 of die bonding film X is preferably 30mJ/m as described above2 Above, it is more preferably 31mJ/m2Above, it is more preferably 32mJ/m2More than.This composition is ensuring adhesive layer 20 and bonding It is suitable in terms of the closing force required between oxidant layer 12.In addition, the 1st surface free energy is preferably 45mJ/m2Below, more Preferably 43mJ/m2Below, it is more preferably 40mJ/m2Below.This composition ensure adhesive layer 20 and adhesive phase 12 it Between above-mentioned small peeling force in terms of be suitable.
Stripping under conditions of 23 DEG C, 180 ° of peel angle and tensile speed 10mm/ minutes as described above of adhesive layer 20 0.1N/10mm or more, more preferable 0.3N/10mm or more, further preferred 0.5N/10mm are shown to SUS planes in separating test The 180 ° of above peel adhesions.This composition is suitable in terms of the holding for ensuring the frame component based on cutting die bonding film X Suitable.In addition, showing preferred 20N/ to SUS planes in the disbonded test of the adhesive layer 20 as described above under the same conditions 10mm or less, more preferable 10N/10mm 180 ° of peel adhesions below.This composition is ensuring the engagement of frame component Self cleavage chip It is suitable in terms of the dismounting of film X.
Adhesive layer 20 is as described above to 20 coupons of adhesive layer of 80 μm of width 4mm and thickness in Initial grip spacing From the stretching at 23 DEG C measured under conditions of 5 DEG C/min of 10mm, frequency 10Hz, dynamic strain ± 0.5 μm and heating rate Storage modulus is preferably 100MPa or more, more preferably 500MPa or more, further preferably 1000MPa or more.This composition exists Ensure that adhesive layer 20 is suitable to the bonding force aspect of frame component, therefore, is ensuring based on cutting die bonding film X's It is suitable in terms of the holding of frame component.In addition, at the adhesive layer 20 23 DEG C measured under the same conditions as described above Storage tensile modulus is preferably 4000MPa or less, more preferably 3000MPa or less, further preferably 2000MPa or less.It should It is suitable in terms of being formed in the dismounting for ensuring frame component Self cleavage die bonding film X.
It cuts in die bonding film X, when the adhesive phase 12 of cutting belt 10 is radiation-curable adhesive layer 12,23 DEG C and T-type disbonded test of the peeling rate under conditions of 300mm/ minutes in radiation curing after adhesive phase 12 with it is Nian Jie Peeling force between oxidant layer 20 is preferably 0.06N/20mm or more as described above, is more preferably 0.1N/20mm or more, is further excellent It is selected as 0.15N/20mm or more.This composition is adapted to ensure that the adhesive phase 12 after the solidification of cutting belt 10 and bonding agent thereon Therefore adaptation between layer 20 is extended work when using cutting die bonding film X after the solidification of adhesive phase 12 Being partially stripped for semiconductor chip autoadhesion oxidant layer 12 with adhesive layer is inhibited to float in this process in the case of sequence Generation in terms of be suitable.Radiation in the T-type disbonded test of 23 DEG C and peeling rate under conditions of 300mm/ minutes is solid Peeling force between adhesive phase 12 after change and adhesive layer 20 is preferably 0.25N/20mm or less as described above, is more preferably 0.23N/20mm or less, further preferably 0.2N/20mm or less.This composition is for carrying out after the solidification of adhesive phase 12 It is in terms of the good pickup for realizing the adhesive phase 12 after the semiconductor chip self-curing with adhesive layer in pickup process Suitable.In addition, viscous before radiation curing in the T-type disbonded test of 23 DEG C and peeling rate under conditions of 300mm/ minutes Peeling force between mixture layer 12 and adhesive layer 20 is preferably 2N/20mm or more as described above.This composition is ensuring cutting belt Be in terms of adaptation in 10 between adhesive phase 12 and adhesive layer 20 thereon in uncured state it is suitable, because This, using cutting die bonding film X when adhesive phase 12 be extended process in the uncured state in the case of Inhibiting the generation aspect floated that is partially stripped of the semiconductor chip autoadhesion oxidant layer 12 with adhesive layer in the process is Suitable.
For being used to form the adhesive of adhesive phase 12 and the interface of adhesive layer 20 in cutting die bonding film X The layer 12 adhesive surface 12a and face 20b of adhesive layer 20, the difference of the arithmetic mean surface roughness (Ra) on two surfaces are as described above Preferably 100nm or less.This composition is adapted to ensure that the adaptation between adhesive phase 12 and adhesive layer 20 thereon, because This, for inhibiting being partially stripped for the semiconductor chip autoadhesion oxidant layer 12 with adhesive layer to float in extending process It is suitable in terms of generation.
Adhesive phase 12 in cutting die bonding film X preferably comprises acrylic polymer as described above, the propylene Acids polymers include Unit the 1st of (methyl) alkyl acrylate for being 10 or more from the carbon number of alkyl and derive from Unit the 2nd of (methyl) acrylic acid 2- hydroxyl ethyl esters.This composition be adapted for carrying out adhesive phase 12 with thereon adhesive layer 20 it Between high shear bonding force be therefore suitable for making in extending process cutting off power and suitably act on the Directional Extension in face Adhesive layer 20 in cutting belt 10 is to make the adhesive layer 20 cut off.
For the acrylic polymer in adhesive phase 12, molar ratio of the above-mentioned Unit the 1st relative to above-mentioned Unit the 2nd Rate is preferably 1 or more, more preferably 3 or more, further preferably 5 or more as described above.This composition is ensuring adhesive phase 12 The combination that above-mentioned high shear bonding force and two interlayers of inhibition between adhesive layer 20 thereon generate in the stacking direction Property interaction in terms of be preferred, therefore, help to realize the good pickup in pickup process.In addition, the molar ratio It is preferably 40 or less, more preferably 35 or less, further preferably 30 or less as described above.This composition is ensuring adhesive phase 12 Adaptation between adhesive layer 20 in extending process so that inhibit the semiconductor chip Autoadhesive with adhesive layer The generation aspect floated that is partially stripped of layer 12 is suitable.
Acrylic polymer in adhesive phase 12, which is preferably addition as described above, to be had as radiation polymerizable component The isocyanate compound containing unsaturated functional group addition compound product.Acrylic polymer in adhesive phase 12 is such When the addition compound product of isocyanate compound containing unsaturated functional group, isocyanate compound containing unsaturated functional group relative to this third In alkene acids polymers from (methyl) acrylic acid 2- hydroxyl ethyl esters Unit the 2nd molar ratio be preferably 0.1 or more, it is more excellent It is selected as 0.2 or more, further preferably 0.3 or more.These are formed in via acrylic polymer and contain unsaturated functional group The reaction of isocyanate compound and be suitable in terms of making adhesive phase 12 moderately high elastification, help to extend in process The good of adhesive layer 20 is cut off.In addition, going out from the viewpoint for reducing the low molecular weight compositions in the adhesive phase 12 after curing Hair produces including being used to form in acrylic polymer addition made of addition isocyanate compound containing unsaturated functional group In the acrylic polymer of object and the response composite of the isocyanate compound containing unsaturated functional group, contain unsaturated functional group Isocyanate compound is relative to the unit (Unit the 2nd) for deriving from (methyl) acrylic acid 2- hydroxyl ethyl esters in acrylic polymer Molar ratio as described above preferably 2 or less, more preferably 1.5 or less, further preferably 1.3 or less.
Fig. 4~Fig. 9 indicates the manufacturing method for semiconductor device of an embodiment of the invention.
In this manufacturing method for semiconductor device, first, as shown in (a) of Fig. 4 and (b) of Fig. 4, on semiconductor crystal wafer W Form slot segmentation 30a (slot segmentation formation process).Semiconductor crystal wafer W has the 1st face Wa and the 2nd face Wb.Semiconductor crystal wafer W's The 1st face sides Wa has been mounted with various semiconductor elements (illustration omitted) and has formd the semiconductor on the 1st face Wa Wire structures necessary to element etc. (illustration omitted).In this process, in the wafer processing adhesive tape T1 quilts with adhesive surface T1a It fits in after the 2nd face sides Wb of semiconductor crystal wafer W, the state of semiconductor crystal wafer W is maintained on wafer processing adhesive tape T1 Under the slot segmentation 30a of prescribed depth is formed using the rotating knifes such as cutter device in the 1st face sides Wa of semiconductor crystal wafer W.Slot segmentation 30a is that the gap for making semiconductor crystal wafer W be separated into semiconductor core blade unit (is schematically shown point in Fig. 4~Fig. 6 with thick line Cut slot 30a).
Then, as shown in (c) of Fig. 4, have the wafer processing adhesive tape T2 of adhesive surface T2a to semiconductor crystal wafer W The 1st face sides Wa fitting and wafer processing adhesive tape T1 from the stripping of semiconductor crystal wafer W.
Then, as shown in (d) of Fig. 4, pass through in the state of maintaining semiconductor crystal wafer W on wafer processing adhesive tape T2 Semiconductor crystal wafer W is thinned to defined thickness (wafer thinning process) by the grinding from the 2nd face Wb.Grinding can be with It is carried out using the abrasive machining device for having grinding grinding stone.By the wafer thinning process, energy is formed in the present embodiment Monolithic turns to the semiconductor crystal wafer 30A of multiple semiconductor chips 31.Semiconductor crystal wafer 30A specifically has in the wafer The 2nd face sides Wb will be singulated the position (interconnecting piece) of the position connection for multiple semiconductor chips 31.Semiconductor crystal wafer 30A In interconnecting piece thickness, i.e. between the front end of the 2nd face sides Wb of the 2nd face Wb and slot segmentation 30a of semiconductor crystal wafer 30A at a distance from It is such as 1~30 μm, preferably 3~20 μm.
Then, as shown in (a) of Fig. 5, the adhesive layer 20 to cutting die bonding film X is bonded by wafer processing glue The semiconductor crystal wafer 30A kept with T2.Later, as shown in (b) of Fig. 5, from semiconductor crystal wafer 30A by wafer processing adhesive tape T2 Stripping.When adhesive phase 12 in cutting die bonding film X is radiation-curable adhesive layer, cutting chip can be replaced Above-mentioned irradiation with radiation in the manufacturing process of bonding film X, semiconductor crystal wafer 30A to after the fitting of adhesive layer 20 from Ultraviolet light israds is irradiated in 11 side of base material to adhesive phase 12.Exposure is such as 50~500mJ/cm2, preferably 100~ 300mJ/cm2.To carry out reducing the region of the irradiation of measure in cutting die bonding film X as the bonding force of adhesive phase 12 (irradiation area R shown in FIG. 1) be such as adhesive phase 12 in 20 fit area of adhesive layer in addition to its peripheral part Region.
Then, after attaching ring frame 41 on the adhesive layer 20 in cutting die bonding film X, such as (a) institute of Fig. 6 Show, the cutting die bonding film X with semiconductor crystal wafer 30A is fixed on to the holding tool 42 of expanding unit.
Then, the 1st extension process (cooling extension process) under conditions of relative low temperature is carried out as shown in (b) of Fig. 6, it will Semiconductor crystal wafer 30A monolithics turn to multiple semiconductor chips 31, and the adhesive layer 20 for cutting die bonding film X is cut off For the adhesive layer 21 of small pieces, the semiconductor chip 31 with adhesive layer is obtained.In this process, expanding unit is made to have The jack-up component 43 of hollow cylindrical downside in the figure of cutting die bonding film X is connected to cutting belt 10 and rises, and presses According to along the two-dimensional directional radially and circumferentially including semiconductor crystal wafer 30A to being fitted with the cutting of semiconductor crystal wafer 30A The mode that the cutting belt 10 of die bonding film X is stretched is extended.The extension so that in cutting belt 10 generate 15~ 32MPa, tensile stress preferably in the range of 20~32MPa condition carry out.Cooling down the temperature condition extended in process is Such as 0 DEG C hereinafter, preferably -20~-5 DEG C, more preferably -15~-5 DEG C, further preferably -15 DEG C.Cooling extension process In expansion rate (jack up component 43 rise speed) be preferably 0.1~100mm/ seconds.In addition, the expansion in cooling extension process Exhibition amount is preferably 3~16mm.
In this process, relatively thin and crackly position is cut off in semiconductor crystal wafer 30A, is occurred to semiconductor core The singualtion of piece 31.At the same time, in this process, the closely sealed adhesive layer with the adhesive phase 12 of the cutting belt 10 extended 20 deform in the closely sealed each region of each semiconductor chip 31 and are suppressed, on the other hand, point between semiconductor chip 31 It cuts at the opposite position of slot, does not generate such deformation inhibiting effect, in such a state, the stretching generated in cutting belt 10 Stress plays a role.As a result, the opposite position of slot segmentation in adhesive layer 20 between semiconductor chip 31 is cut off.This After process, as shown in (c) of Fig. 6, so that jack-up component 43 is declined and release the extended mode of cutting belt 10.
Then, the 2nd extension process under conditions of relatively-high temperature is carried out as shown in (a) of Fig. 7, is made with adhesive layer Distance (spacing distance) between semiconductor chip 31 is widened.In this process, the hollow cylindrical that again has expanding unit The component 43 that jacks up of shape rises and extends the cutting belt 10 for cutting die bonding film X.2nd extension process in temperature condition be Such as 10 DEG C or more, preferably 15~30 DEG C.For expansion rate (jacking up the speed that component 43 rises) in 2nd extension process Such as 0.1~10mm/ seconds, preferably 0.3~1mm/ seconds.In addition, the propagation in the 2nd extension process is such as 3~16mm.At this In process, the spacing distance of the semiconductor chip 31 with adhesive layer is made to widen to can be suitable by aftermentioned pickup process Degree of the ground from semiconductor chip 31 of the pickup of cutting belt 10 with adhesive layer.After this process, as shown in (b) of Fig. 7 So that jack-up component 43 is declined, releases the extended mode of cutting belt 10.Inhibiting to release carrying in cutting belt 10 after extended mode In terms of the spacing distance of the semiconductor chip 31 of adhesive layer narrows, preferably in cutting belt 10 before releasing extended mode The exterior portion of 31 holding area of semiconductor chip is heated, makes its contraction.
Then, as needed through cleaning solutions such as utilization water to the cutting with the semiconductor chip 31 with adhesive layer After the cleaning process cleaned with 10 31 side of semiconductor chip, as shown in figure 8, the pickup of Self cleavage band 10 carries bonding agent The semiconductor chip 31 (pickup process) of layer.For example, for the semiconductor chip 31 with adhesive layer as pickup object, Downside makes the acicular member 44 of mechanism for picking rise after cutting belt 10 is jacked up in the figure of cutting belt 10, utilizes Suction jig 45 is adsorbed holding.In pickup process, the jack-up speed of acicular member 44 is such as 1~100mm/ seconds, needle The jack-up amount of shape component 44 is such as 50~3000 μm.
Then, as shown in (a) of Fig. 9, by the semiconductor chip 31 with adhesive layer picked up by adhesive layer 21 are temporarily fixed to defined adherend 51.As adherend 51, it can be mentioned, for example：Lead frame, TAB (tape automated bondings； Tape Automated Bonding) film, circuit board, the semiconductor chip in addition made.Adhesive layer 21 is solid temporarily Shear bond power of the timing at 25 DEG C is preferably 0.2MPa or more, more preferably 0.2~10MPa relative to adherend 51.It is viscous The composition that the shear bond power for connecing oxidant layer 21 is 0.2MPa or more in aftermentioned wire bonding sequence for inhibiting due to super Acoustic vibration, heating and generated in adhesive layer 21 and the bonding plane of semiconductor chip 31 or adherend 51 shear-deformable and suitable It is suitable that ground, which carries out wire bonding,.In addition, shear bond power of the adhesive layer 21 when temporary fixed at 175 DEG C relative to Adherend 51 is preferably 0.01MPa or more, more preferably 0.01~5MPa.
Then, as shown in (b) of Fig. 9, electrode pad (illustration omitted) and the adherend 51 of semiconductor chip 31 are had Some portion of terminal (illustration omitted) are electrically connected (wire bonding sequence) by bonding wire 52.The electrode of semiconductor chip 31 Pole plate, the portion of terminal of adherend 51 and the connection of bonding wire 52 can be realized by the ultrasonic bonding with heating, with Carry out the mode of 21 heat cure of adhesive layer.As bonding wire 52, such as gold thread, aluminum steel or copper wire can be used. Lead heating temperature in wire bonding is such as 80~250 DEG C, preferably 80~220 DEG C.In addition, its heating time is the several seconds ~several minutes.
Then, as shown in (c) of Fig. 9, by for protecting semiconductor chip 31 on adherend 51, bonding wire 52 Semiconductor chip 31 is sealed (sealing process) by sealing resin 53.In this process, the heat cure of adhesive layer 21 is carried out.At this In process, such as sealing resin 53 formed by using the transfer molding technology that mold carries out.Structure as sealing resin 53 At material, such as epoxy system resin can be used.In this process, the heating temperature for being used to form sealing resin 53 is for example 165~185 DEG C, heating time is such as 60 seconds~several minutes.When sealing resin 53 is not abundant in this process (sealing process) When being cured, the rear curing process for making sealing resin 53 be fully cured is carried out after this process.Even if in sealing work In sequence in the case of the incomplete heat cure of adhesive layer 21, can also together it be glued with sealing resin 53 in rear curing process Connect the complete heat cure of oxidant layer 21.In rear curing process, heating temperature is such as 165~185 DEG C, and heating time is for example 0.5~8 hour.
As above operation, can manufacture semiconductor device.
In present embodiment, as described above, the semiconductor chip 31 with adhesive layer is temporarily fixed to adherend 51 Later, wire bonding sequence is carried out in the state that adhesive layer 21 is not up to complete heat cure.Instead of such composition, It, can also be after the semiconductor chip 31 with adhesive layer be temporarily fixed to adherend 51, in bonding agent in the present invention Wire bonding sequence is carried out again after 21 heat cure of layer.
In the manufacturing method of the semiconductor device of the present invention, wafer thinning process shown in Fig. 10 can be carried out to replace With reference to the above-mentioned wafer thinning process of (d) of Fig. 4.After the above process with reference to (c) of Fig. 4, in wafer shown in Fig. 10 In thinning process, in the state of maintaining semiconductor crystal wafer W on wafer processing adhesive tape T2, pass through the mill from the 2nd face Wb It cuts processing and the wafer is thinned to specific thickness, formed comprising multiple semiconductor chips 31 and be held in wafer processing adhesive tape The semiconductor crystal wafer dividing body 30B of T2.In this process, may be used by wafer be ground to slot segmentation 30a its own in the 2nd face Method (the 1st method) until the exposing of the sides Wb, can also be with the following method：Wafer is ground from the 2nd face sides Wb to will be to Up to slot segmentation 30a, then the extruding force effect of wafer is made to generate between slot segmentation 30a and the 2nd face Wb using grindstone and be split Line, to form semiconductor crystal wafer dividing body 30B (the 2nd method).According to used method suitable for determining (a) with reference to Fig. 4 With the slot segmentation 30a as formed above of (b) of Fig. 4, depth from the 1st face Wa.In Fig. 10, it is schematically shown with thick line Via slot segmentation 30a made of the 1st method or via slot segmentation 30a and coupled crackle made of the 2nd method.? In the present invention, the semiconductor crystal wafer dividing body 30B that operation as above makes can be fitted in into cutting instead of semiconductor crystal wafer 30A Die bonding film X, and carry out the above-mentioned each process with reference to Fig. 5~Fig. 9.
Semiconductor crystal wafer dividing body 30B is being fitted in cutting die bonding film by (b) expression of (a) and Figure 11 of Figure 11 The 1st extension process (cooling extension process) carried out after X.In this process, the hollow cylindrical that makes expanding unit have Jack-up component 43 be connected to cutting belt 10 in the figure of cutting die bonding film X and rise in downside, with along including partly leading The two-dimensional directional radially and circumferentially of body wafer dividing body 30B is to being fitted with the cutting core of semiconductor crystal wafer dividing body 30B The mode that the cutting belt 10 of chip bonding film X is stretched is extended.The extension with generate such as 1 in cutting belt 10~ 100MPa, tensile stress preferably in the range of 5~40MPa condition carry out.Temperature condition in this process is such as 0 DEG C Hereinafter, preferably -20~-5 DEG C, more preferably -15~-5 DEG C, further preferably -15 DEG C.Expansion rate in this process (jacking up the speed that component 43 rises) is preferably 1~500mm/ seconds.In addition, the propagation in this process is preferably 50~200mm. Cooling extension process in this way, the adhesive layer 20 of cutting die bonding film X are cut off adhesive layer 21 for small pieces, To obtain the semiconductor chip 31 with adhesive layer.It is viscous with the cutting belt 10 that is extended specifically, in this process The closely sealed adhesive layer 20 of the mixture layer 12 each region closely sealed in each semiconductor chip 31 of semiconductor crystal wafer dividing body 30B In, deformation is suppressed, and on the other hand, is not generated at the opposite positions the slot segmentation 30a between semiconductor chip 31 this Inhibiting effect is deformed, the tensile stress generated in cutting belt 10 in this state plays a role.As a result, in adhesive layer 20 In be cut off at the opposite position slot segmentation 30a between semiconductor chip 31.
In the manufacturing method for semiconductor device of the present invention, semiconductor crystal wafer 30A or semiconductor crystal wafer can also be replaced to divide Body 30B fits in the above-mentioned composition of cutting die bonding film X, and the semiconductor crystal wafer 30C for operating making as follows is made to fit in Cut die bonding film X.
As shown in (a) of Figure 12 and (b) of Figure 12, modification area 30b is formed first in semiconductor crystal wafer W.Semiconductor Wafer W has the 1st face Wa and the 2nd face Wb.The 1st face sides Wa in semiconductor crystal wafer W have been mounted with that various semiconductor elements (save Sketch map shows), and wire structures etc. (illustration omitted) necessary to the semiconductor element has been formd on the 1st face Wa.This In process, after the wafer processing adhesive tape T3 with adhesive surface T3a to be fitted in the 1st face sides Wa of semiconductor crystal wafer W, in crystalline substance The circle processing state that semiconductor crystal wafer W is maintained on adhesive tape T3, half-and-half leads from the side opposite with wafer processing adhesive tape T3 Body wafer W is located at the laser of inside wafer along its pre-segmentation line irradiation focal point, is melted using caused by Multiphoton Absorbtion Modification area 30b is formed in semiconductor crystal wafer W.Modification area 30b is for making semiconductor crystal wafer W be separated into semiconductor chip The crisp atenuator region of unit.On pre-segmentation line form modification area 30b's in semiconductor crystal wafer about by laser irradiation Method is documented in such as Japanese Unexamined Patent Publication 2002-192370 bulletins, the laser irradiation condition example in the embodiment It such as can be in the range of the following conditions suitable for adjustment.
< laser irradiation conditions >
(A) laser
(B) optically focused lens
100 times of multiplying power or less
NA 0.55
To 100% or less the transmissivity of optical maser wavelength
(C) it is placed with movement speed 280mm/ seconds or less of the mounting table of semiconductor substrate
Then, as shown in (c) of Figure 12, to maintain the state of semiconductor crystal wafer W on wafer processing adhesive tape T3, lead to Semiconductor crystal wafer W is thinned to defined thickness by the grinding crossed from the 2nd face Wb, and formation energy monolithic turns to multiple as a result, The semiconductor crystal wafer 30C (wafer thinning process) of semiconductor chip 31.In the present invention, it can be incited somebody to action instead of semiconductor crystal wafer 30A As above the semiconductor crystal wafer 30C that operation makes fits in cutting die bonding film X, and carries out with reference to the above-mentioned each of Fig. 5~Fig. 9 Process.
(a) of Figure 13 and (b) of Figure 13 is indicated after semiconductor crystal wafer 30C to be fitted in cutting die bonding film X The 1st extension process (cooling extension process) carried out.In this process, make the top for the hollow cylindrical that expanding unit has It plays the downside in the figure of cutting die bonding film X of component 43 to be connected to cutting belt 10 and rise, with along including semiconductor die The two-dimensional directional radially and circumferentially of circle 30C is to being fitted with the cutting of the cutting die bonding film X of semiconductor crystal wafer 30C It is extended with the mode that 10 are stretched.The extension is so as to generate such as 1~100MPa, preferably 5~40MPa in cutting belt 10 In the range of the condition of tensile stress carry out.Temperature condition in this process is such as 0 DEG C hereinafter, preferably -20~-5 DEG C, more preferably -15~-5 DEG C, further preferably -15 DEG C.Expansion rate in this process (jacks up the speed that component 43 rises Degree) it is preferably 1~500mm/ seconds.In addition, the propagation in this process is preferably 50~200mm.Cooling extension in this way Process, the adhesive layer 20 of cutting die bonding film X is cut off adhesive layer 21 for small pieces, to obtain carrying bonding agent The semiconductor chip 31 of layer.Specifically, in this process, in semiconductor crystal wafer 30C at fragile modification area 30b shape At crackle, monolithic turns to semiconductor chip 31.At the same time, in this process, the adhesive phase with the cutting belt 10 extended In the closely sealed each region of each semiconductor chip 31 of semiconductor crystal wafer 30C, deformation is pressed down 12 closely sealed adhesive layers 20 On the other hand system does not generate this deformation inhibiting effect, in the state at the position opposite with the crackle forming position of wafer The tensile stress generated in lower cutting belt 10 plays a role.As a result, in adhesive layer 20 between semiconductor chip 31 Crackle forming position is cut off at opposite position.
In addition, in the present invention, cutting die bonding film X can be used in obtaining as described above half with adhesive layer Conductor chip can be also used for obtaining carry adhesive layer half when being laminated multiple semiconductor chips and carrying out the installation of 3 dimensions Conductor chip.Both can be with adhesive layer 21 together sandwiched spacer between the semiconductor chip 31 of this 3 dimension installation, it can also Not sandwiched spacer.
Embodiment
(embodiment 1)
< adhesive layers >
By acrylic polymer A1(ethyl acrylate and butyl acrylate and acrylonitrile and methyl propenoic acid glycidyl The copolymer of ester, weight average molecular weight are 1,200,000, and glass transition temperature is 0 DEG C, epoxide number 0.4eq/kg) it is 54 mass parts, solid State phenolic resin (trade name " MEHC-7851SS " is solid-state at 23 DEG C, bright and chemical conversion Co. Ltd. system) 3 mass parts, liquefied phenol Urea formaldehyde (trade name " MEH-8000H " is liquid at 23 DEG C, bright and be melted into Co. Ltd. system) 3 mass parts are filled out with silica Material (trade name " SO-C2 ", average grain diameter are 0.5 μm, Co., Ltd.'s Admatechs systems) 40 mass parts are added to methyl ethyl ketone In mixed, adjust concentration in such a way that viscosity at room temperature is 700mPas, obtain adhesive composite C1.Then, exist In the silicone release process face of PET sliders (38 μm of thickness) with the face for implementing silicone release processing, painting is used Dauber coating adhesive composition C1, film is formed, 2 minutes heat dryings are carried out at 130 DEG C to the film.As above operation, The adhesive layer of 10 μm of the thickness of embodiment 1 is formed on PET sliders.The composition of the adhesive layer of embodiment 1 is shown in table 1 (in table 1, indicate that the unit of each numerical value of the composition of composition is the composition other than the aftermentioned numerical value about MOI Interior opposite " mass parts ").
< adhesive phases >
In the reaction vessel for having condenser pipe, nitrogen ingress pipe, thermometer and agitating device, in nitrogen gas at 60 DEG C Under atmosphere to comprising 100 molar part of lauryl acrylate (LA), 20 molar part of acrylic acid 2- hydroxyl ethyl esters (2HEA), relative to these lists The benzoyl peroxide as polymerization initiator and the toluene as polymer solvent that 100 mass parts of body ingredient are 0.2 mass parts Mixture carry out 10 hours stirring (polymerisation).It is obtained as a result, containing acrylic polymer P1Polymer solution.It is right Acrylic polymer P in the polymer solution1, weight average molecular weight (Mw) is 460,000, glass transition temperature 9.5 DEG C, from LA unit relative to the unit from 2HEA molar ratio be 5.Then, acrylic acid will be contained comprising this Type of Collective object P1Polymer solution, 2- methacryloxyethyls isocyanates (MOI) with as addition reaction catalyst Dibutyl tin laurate mixture at room temperature in air atmosphere stir 48 hours (addition reaction).The reaction solution In, the compounding amount of MOI is 20 molar parts relative to 100 molar part of above-mentioned lauryl acrylate, and the MOI compounding amounts are relative to propylene Acids polymers P1In from 2HEA unit and/or its hydroxyl total amount molar ratio be 1.In addition, the reaction solution In, the compounding amount of dibutyl tin laurate is relative to acrylic polymer P1100 mass parts are 0.01 mass parts.Pass through The addition reaction obtains being included in acrylic polymer P of the side chain with methacrylate2(addition has containing unsaturation Isocyanation close object acrylic polymer) polymer solution.Then, phase is added in the polymer solution For acrylic polymer P2100 mass parts be 1 mass parts polyisocyanate compound (trade name " Coronate L ", TOSOH Co., Ltd's system) and the Photoepolymerizationinitiater initiater (trade name " Irgacure 127 ", BASF AG's system) of 2 mass parts mixed It closes, also, mixture addition toluene is diluted in such a way that the viscosity of the mixture at room temperature is 500mPas, Obtain adhesive composition C2.Then, it on the above-mentioned adhesive layer on being formed in PET sliders, is coated with using applicator viscous Mixture composite C2, film is formed, 2 minutes heat dryings are carried out at 130 DEG C to the film, forms thickness on adhesive layer The adhesive phase of 10 μm of degree.Then, the exposed surface using laminating machine in the adhesive phase is bonded ethene-vinyl acetate at room temperature The base material (trade name " RB-0104 ", 130 μm of thickness, Kurashiki Boseki K.K.'s system) of ester copolymer (EVA) system.Then, it carries out Processing knife is set to enter to the punch press process until reaching slider from EVA substrate sides.Being formed on slider as a result, has EVA The cutting die bonding film of the disc-shape of the diameter 370mm of the stepped construction of base material/adhesive phase/adhesive layer.As above Operation makes the cutting of the embodiment 1 with the stepped construction comprising cutting belt (EVA base materials/adhesive phase) and adhesive layer Die bonding film.
(embodiment 2~4)
In the formation of adhesive phase, the compounding amount of MOI is changed to 16 molar parts (embodiment 2), 12 by 20 molar parts Molar part (embodiment 3) or 8 molar parts (embodiment 4), it is in addition to this, same as the cutting die bonding film of embodiment 1 to grasp Make, makes each cutting die bonding film of embodiment 2~4.
(embodiment 5)
< adhesive layers >
By acrylic polymer A2(trade name " Teisanresin SG-70L ", the acrylic compounds with itrile group are total Polymers, weight average molecular weight are 900,000, and glass transition temperature is -13 DEG C, acid value 5mgKOH/g, Nagase ChemteX Corporation systems) 18 mass parts, (trade name " KI-3000 ", is solid-state at 23 DEG C to solid epoxy resin, and aurification is lived by Nippon Steel Learn Co. Ltd. system) 6 mass parts, (trade name " YL-980 " is liquid, Mitsubishi Chemical's strain formula meeting at 23 DEG C to liquid-state epoxy resin Society's system) 5 mass parts and silica filler (trade name " SO-C2 ", average grain diameter are 0.5 μm, Co., Ltd.'s Admatechs systems) 40 mass parts are added in methyl ethyl ketone and are mixed, and adjust concentration in such a way that viscosity at room temperature is 700mPas, obtain Adhesive composite C3.Then, in the organic of the PET sliders (38 μm of thickness) with the face for implementing silicone release processing Silicon demoulds in process face, uses applicator coating adhesive composition C3, film is formed, which is carried out 2 minutes at 130 DEG C Heat drying.As above operation forms the adhesive layer of 10 μm of the thickness of embodiment 5 on PET sliders.
< adhesive phases >
Other than the compounding amount of MOI is changed to 16 molar parts by 20 molar parts, the above-mentioned adhesive phase with embodiment 1 Same operation, forms the adhesive phase of embodiment 5, makes the cutting die bonding film of embodiment 5.
(embodiment 6)
In the reaction vessel for having condenser pipe, nitrogen ingress pipe, thermometer and agitating device, in nitrogen gas at 60 DEG C Under atmosphere to comprising 100 molar part of 2-EHA (2EHA), 20 molar part of acrylic acid 2- hydroxyl ethyl esters (2HEA), relative to These 100 mass parts of monomer component are 0.2 mass parts as the benzoyl peroxide of polymerization initiator and as polymer solvent Toluene mixture carry out 10 hours stirring (polymerisation).It is obtained as a result, containing acrylic polymer P3Polymer Solution.For the acrylic polymer P in the polymer solution3, weight average molecular weight (Mw) is 400,000, glass transition temperature It is 60 DEG C.Then, will include that should contain acrylic polymer P3Polymer solution, 2- methacryloxyethyl isocyanides The mixture of acid esters (MOI) and the dibutyl tin laurate as addition reaction catalyst stirs in air atmosphere in room temperature 48 hours (addition reaction).In the reaction solution, the compounding amount of MOI is relative to 100 moles of above-mentioned 2-EHA Part is 16 molar parts.In addition, in the reaction solution, the compounding amount of dibutyl tin laurate is relative to acrylic polymer P3 100 mass parts are 0.01 mass parts.By the addition reaction, obtain containing the acrylic acid in side chain with methacrylate Type of Collective object P4Polymer solution.Later, it is added in the polymer solution relative to acrylic polymer P4100 mass Part is the light of polyisocyanate compound (trade name " Coronate L ", the TOSOH Co., Ltd's system) and 2 mass parts of 1 mass parts Polymerization initiator (trade name " Irgacure 127 ", BASF AG's system) mixed, also, at room temperature with the mixture The mode that viscosity is 500mPas is added toluene to the mixture and is diluted, and adhesive composition C is obtained4.By bonding agent Composition C3When forming adhesive phase on the adhesive layer of formation, adhesive composition C is used4, in addition to this, with embodiment 5 Cutting die bonding film equally operates, and makes the cutting die bonding film of embodiment 6.
(comparative example 1)
In the formation of adhesive phase, instead of above-mentioned adhesive composition C2, use above-mentioned adhesive composition C4, remove this In addition, same as the cutting die bonding film of embodiment 1 to operate, the cutting die bonding film of comparison example 1.
(comparative example 2)
With embodiment 1 described in the same manner as, by above-mentioned adhesive composite C1Adhesive layer is formed on PET sliders (10 μm of thickness).To the adhesive layer, punch press process is diameter 370mm in the state of with slider.On the other hand, having In the silicone release process face for there are the PET sliders (38 μm of thickness) in the face for implementing silicone release processing, smearing is used Device is coated with above-mentioned adhesive composition C4, form film, 2 minutes heat dryings carried out at 130 DEG C to the film, PET every The adhesive phase of 10 μm of thickness is formed in vitro.Then, it using laminating machine, is bonded at room temperature in the exposed surface of the adhesive phase Base material (trade name " RB-0104 ", 130 μm of thickness, Kurashiki Boseki K.K. of ethylene-vinyl acetate copolymer (EVA) system System).For thus obtained stacking sheet body, punch press process is diameter 370mm in the state of with slider, forms cutting Band.Then, by thus obtained cutting belt with adhesive layer in such a way that the center of cutting belt is consistent with the center of adhesive layer It carries out position alignment and is bonded.As above operation, making has comprising cutting belt (EVA base materials/adhesive phase) and adhesive layer The cutting die bonding film of the comparative example 2 of stepped construction.
< surface free energies >
For each cutting die bonding film of Examples 1 to 6 and Comparative Examples 1 and 2, the adhesive phase of adhesive layer is found out The surface free energy of side surface and the surface free energy of the adhesive layer side surface of the adhesive phase after ultraviolet curing.Specifically For, first, to cutting the cutting belt adhesive phase of die bonding film, ultraviolet light is irradiated from cutting belt substrate side, keeps this viscous Mixture layer ultraviolet curing.In ultraviolet light irradiation, using high-pressure sodium lamp, it is 350mJ/cm to make irradiation accumulated light2.Then, Adhesive layer is removed from cutting belt and/or its adhesive phase, surface free energy is made to identify the object surface (adhesive of adhesive layer The adhesive layer side surface of layer side surface and adhesive phase) expose.Then, under conditions of 20 DEG C and relative humidity 65% pair with Surface free energy identifies the water (H of object surface contact2) and diiodomethane (CH O2I2) each drop, using contact angle meter measurement connect Feeler.Then, using the value of the contact angle θ w of the water measured and the contact angle θ i of diiodomethane, according to Journal of The method that Applied Polymer Science, vol.13, p1741-1747 (1969) are recorded, finds out γ sd(surface free energy Dispersion force ingredient) and γ sh(the hydrogen bond force ingredient of surface free energy).Also, by γ sdWith γ shIt is added obtained value γ s (=γ sd+γsh) surface free energy as the object surface.The γ s of object surface are identified for each surface free energydAnd γ sh, obtained in the form of the solution of 2 yuan of simultaneous equations of following formula (1) and formula (2).In formula (1) (2), γ w are that the surface of water is free Energy, γ wdDispersion force ingredient, γ w for the surface free energy of waterhIt is iodo for hydrogen bond force ingredient, the γ i of the surface free energy of water Surface free energy, the γ i of methanedDispersion force ingredient, γ i for the surface free energy of iodomethanehFor iodomethane surface from By the hydrogen bond force ingredient of energy, the γ w=72.8mJ/m used as known literature value2、γwd=21.8mJ/m2、γwh= 51.0mJ/m2, γ i=50.8mJ/m2、γid=48.5mJ/m2、γih=2.3mJ/m2.It will be thus finding out, adhesive layer The surface free energy γ s of adhesive phase side surface1(mJ/m2) and ultraviolet curing after adhesive phase adhesive layer side surface Surface free energy γ s2 (mJ/m2) shown in table 1.The difference of these surface free energies | γ s1-γs2|(mJ/m2) it is also depicted in table 1.
Mathematical expression 1
< surface roughnesses >
For each cutting die bonding film of Examples 1 to 6 and Comparative Examples 1 and 2, the adhesive phase of adhesive layer is studied The surface roughness of side surface and the surface roughness of the adhesive layer side surface of adhesive phase.Specifically, first, to cutting The adhesive phase for cutting the cutting belt in die bonding film irradiates ultraviolet light from cutting belt substrate side, makes the adhesive phase ultraviolet light Solidification.In ultraviolet light irradiation, using high-pressure sodium lamp, irradiation accumulated light is set as 350mJ/cm2.Then, from cutting belt and/or Its adhesive phase removes adhesive layer.Then, for the adhesive layer surface exposed by the stripping and adhesive phase table Face is found out using confocal laser microscope (trade name " OPTELICS H300 ", Lasertec Corporation systems) respectively Arithmetic mean surface roughness.By the surface roughness Ra of the adhesive phase side surface of adhesive layer1(nm), adhesive phase is viscous Connect (nm) of the surface roughness Ra 2 of oxidant layer side surface and the difference of these surface roughnesses | Ra1-Ra2| (nm) is shown in table 1.
180 ° of peel adhesion > of < adhesive layers
It is following to operate for the adhesive layer in each cutting die bonding film of Examples 1 to 6 and Comparative Examples 1 and 2, it grinds Study carefully 180 ° of peel adhesions at 23 DEG C.First, ultraviolet light is irradiated from substrate side to the adhesive phase in cutting belt.Ultraviolet light shines It hits, using high-pressure sodium lamp, irradiation accumulated light is set as 350mJ/cm2.Then, tool is cut from the cutting die bonding film There is the laminated body (width 10mm × length 100mm) of the stepped construction of cutting belt base material, adhesive phase and adhesive layer.Later, By making reciprocal 1 crimping operation of the roller of 2kg that the adhesive layer side of the laminated body be made to fit in Silicon Wafer at 60 DEG C, Afterwards, which is placed 2 minutes at 60 DEG C.Then, it is removed from the adhesive layer on Silicon Wafer by adhesive phase and base material. Then, adhesive layer fitting facing rubber band (trade name " BT-315 ", the Nitto Denko Corp on remaining in Silicon Wafer System), it is removed from Silicon Wafer by adhesive layer, adhesive layer is made to be transferred to the facing rubber band from Silicon Wafer.So operation makes band There are the adhesive layer coupons (width 10mm × length 100mm) of facing rubber band.Adhesive layer coupons are fitted in as quilt The SUS plates of viscous object, by making reciprocal 1 crimping operation of the roller of 2kg that adhesive layer coupons be made to be crimped with adherend.Then, After placing 30 minutes at room temperature, cupping machine (trade name " Autograph AGS-J ", Shimano Inc's system are used Make made), measure 180 ° peel adhesions (N/10nm) of the adhesive layer coupons to SUS plates.In this measurement, measuring temperature And/or exfoliation temperature is set as 23 DEG C, draw angle and/or peel angle are set as 180 °, tensile speed is set as 10mm/ minutes.It will Its measurement result is shown in table 1.
The storage tensile modulus > of < adhesive layers
For each adhesive layer of Examples 1 to 6 and Comparative Examples 1 and 2, it is based on using measurement of dynamic viscoelasticity device (commodity Name " Rheogel-E4000 ", UBM corporations) carry out Measurement of Dynamic Viscoelasticity, find out the storage tensile modulus at 23 DEG C (MPa).For the coupons for Measurement of Dynamic Viscoelasticity, is formed and each adhesive layer is laminated into layer obtained from 80 μm of thickness After stack, is cut, be thereby preparing for from the laminated body with the size of width 4mm × length 20mm.In addition, in this measurement, Distance between the Initial grip of coupons holding clamp is set as 10mm, mode determination is set as to stretch mode, by measuring temperature Range is set as -30 DEG C~100 DEG C, frequency is set as 10Hz, dynamic strain is set as to ± 0.5 μm, will heat up speed be set as 5 DEG C/ Minute.Its measurement result is shown in table 1.
< T-type disbonded tests >
For each cutting die bonding film of Examples 1 to 6 and Comparative Examples 1 and 2, following work study adhesive phase with Peeling force between adhesive layer.First, the examination that adhesive phase is in uncured state is made by each cutting die bonding film Test piece.Specifically, being bonded facing rubber band in the adhesive layer side of cutting die bonding film, (trade name " BT-315 ", day are eastern Electrician's Co. Ltd. system), the ruler of width 50mm × length 120mm is cut by the cutting die bonding film with facing rubber band Very little test film.Then, to the test film, cupping machine (trade name " Autograph AGS-J ", Co., Ltd. island are used Tianjin makes made) T-type disbonded test is carried out, measure peeling force (N/20mm).In this measurement, temperature condition is set as 23 DEG C, is incited somebody to action Peeling rate is set as 300mm/ minutes.On the other hand, it is also in and is had cured by each cutting die bonding film making adhesive phase State test film.Specifically, for cutting die bonding film, 350mJ/cm is irradiated to adhesive phase from substrate side2 Ultraviolet light make adhesive phase cure after, cutting die bonding film adhesive layer side be bonded facing rubber band (trade name " BT-315 ", Nitto Denko Corp's system), from this with facing rubber band cutting die bonding film cut width 50mm × The test film of the size of length 120mm.Then, to the test film, cupping machine (trade name " Autograph AGS- are used J ", Shimadzu Scisakusho Ltd's system) T-type disbonded test is carried out, measure peeling force (N/20mm).In this measurement, by temperature strip Part is set as 23 DEG C, peeling rate is set as to 300mm/ minutes.Measurement result in above T-type disbonded test is shown in table 1.
< extends the implementation > of process and pickup process
Using each cutting die bonding film of Examples 1 to 6 and Comparative Examples 1 and 2, carries out bonding process below, is used for The 1st extension process (cooling extension process), the 2nd extension process (room temperature extension process) and pickup work for separation cut off Sequence.
In bonding process, it will be protected by wafer processing adhesive tape (trade name " UB-3083 ", Nitto Denko Corp's system) The semiconductor crystal wafer dividing body held fits in after the adhesive layer of cutting die bonding film, will from semiconductor crystal wafer dividing body Wafer processing adhesive tape is removed.For cutting die bonding film, ultraviolet light is irradiated from substrate side to the adhesive phase of cutting belt Make the adhesive phase ultraviolet curing in advance.In ultraviolet light irradiation, using high-pressure sodium lamp, irradiation accumulated light is set as 350mJ/ cm2.In fitting, using laminating machine, fitting speed is set as 10mm/ seconds, temperature condition is set as to 60 DEG C, sets pressure condition For 0.15MPa.In addition, semiconductor crystal wafer dividing body is operated as follows to be formed and be prepared.Firstly, in together with ring frame The two sides for being held in the state of wafer processing adhesive tape (trade name " V-12S ", Nitto Denko Corp's system) has carried out mirror The bare silicon wafer (12 inches of diameter, 780 μm of thickness, Tokyo Chemical Co., Ltd system) of face finishing processing, uses from one surface side Cutter device (trade name " DFD6361 ", DISCO Corporation systems) passes through rotating knife (trade name " NBC-ZH 203O SE HCBB ", DISCO Corporation systems) formed singualtion slot segmentation (25 μm of width, 50 μm of depth, a subregion be 10mm The clathrate of × 10mm).Then, in slot segmentation forming face fitting wafer processing adhesive tape, (trade name " UB-3083 ", day are eastern electric Work Co. Ltd. system) after, above-mentioned wafer processing adhesive tape (trade name " V-12S ") is removed from wafer.Then, it is ground using the back side Turning device (trade name " DGP8760 ", DISCO Corporation systems) is from another side (face for not forming slot segmentation) side of wafer Grinding is carried out, the wafer is thus made to be thinned to 25 μm of thickness.Semiconductor crystal wafer dividing body is formed according to the above operation (to be in It is held in the state of wafer processing adhesive tape).The semiconductor crystal wafer dividing body includes multiple semiconductor chips (10mm × 10mm).
Cooling extension process uses mold separating device (trade name " Die Separator DDS2300 ", DISCO Corporation systems), expanding element is cooled down by it to carry out.Specifically, first with semiconductor crystal wafer dividing body The ring frame of adhesive layer in above-mentioned cutting die bonding film, which is pasted, uses region (around workpiece stickup region), in room The lower SUS ring frames (DISCO Corporation systems) for attaching 12 inches of diameter of temperature.Then, which is engaged thin Film is set in device, is engaged using cutting chip of the cooling expanding element extension with semiconductor crystal wafer dividing body of the device The cutting belt of film.In the cooling extends process, temperature is -15 DEG C, and expansion rate is 100mm/ seconds, propagation 7mm.
Room temperature extends process and uses mold separating device (trade name " Die Separator DDS2300 ", DISCO Corporation systems), it is carried out using its room temperature expanding element.Specifically, using the room temperature expanding element of the device, expand Exhibition have passed through the cutting belt of the cutting die bonding film with semiconductor crystal wafer dividing body of above-mentioned cooling extension process.At this Room temperature extends in process, and temperature is 23 DEG C, and expansion rate is 1mm/ seconds, propagation 10mm.Then, to have passed through room temperature extension Cutting die bonding film implement heat shrink processing.Its treatment temperature is 200 DEG C, and processing time is 20 seconds.
In pickup process, device (trade name " Die bonder SPA-300 ", strain formula meeting with mechanism for picking are used The new river system of society) attempt pickup the semiconductor chip with adhesive layer after singualtion has been carried out in cutting belt.It is picked up about this It takes, the jack-up speed of acicular member is 1mm/ seconds, and jack-up amount is 2000 μm, and pickup review number is 5.
Each cutting die bonding film using Examples 1 to 6 and Comparative Examples 1 and 2 carry out it is above during, it is right Process is extended in cooling, is not generating when the floating of semiconductor chip Self cleavage band with adhesive layer for having carried out singualtion It is evaluated as excellent (◎) for floating when cutting off, in floating for the semiconductor chip with adhesive layer for having carried out singualtion (that is, the office of the adhesive layer Self cleavage with adhesive phase in having carried out the semiconductor chip with adhesive layer of singualtion Remove in portion) area is evaluated as not for floating when cutting off when relative to the gross area of singulated semiconductor chip being 40% or more Good (×).About pickup process, five is carried the semiconductor chips of adhesive layer and commented the case where capable of all being picked up from cutting belt Valence be pick it is excellent (◎), will from cutting belt pick up the semiconductor chip with adhesive layer number be 1~4 the case where The case where being evaluated as that pick is good (zero), 1 semiconductor chip with adhesive layer can not all be picked up from cutting belt is commented Valence is that pick is bad (×).By these evaluation result is shown in table 1.
[evaluation]
Using the cutting die bonding film of Examples 1 to 6, will not occur to carry adhesive layer in cooling extension process Semiconductor chip float from cutting belt, cutting off for adhesive layer can be carried out well, and can be fitted in pickup process Preferably pick up the semiconductor chip with adhesive layer.
Table 1

Claims (14)

1. a kind of cutting die bonding film, has：
Cutting belt has the stepped construction comprising base material and adhesive phase；With
Described adhesive layer in adhesive layer, with the cutting belt is strippingly closely sealed,
It is used to form surface and the described adhesive of the adhesive layer and the interface of described adhesive layer, described adhesive layer The surface of layer can generate 3.5mJ/m2Above surface free energy difference.
2. cutting die bonding film according to claim 1, wherein the surface of described adhesive layer can have 32mJ/m2Surface free energy below.
3. cutting die bonding film according to claim 1, wherein the surface on the surface of the adhesive layer is certainly By that can be 30~45mJ/m2。
4. cutting die bonding film according to claim 1, wherein the adhesive layer is in 23 DEG C, peel angle 180 ° and tensile speed show SUS planes in the disbonded test under conditions of 10mm/ minutes 180 ° of 0.1~20N/10mm Peel adhesion.
5. cutting die bonding film according to claim 1, wherein the adhesive layer, to width 4mm and thickness 80 μm of adhesive layer coupons distance 10mm, frequency 10Hz, dynamic strain ± 0.5 μm and heating rate 5 between Initial grip The storage tensile modulus at 23 DEG C measured under conditions of DEG C/min is 100~4000MPa.
6. cutting die bonding film according to claim 1, wherein described adhesive layer bonds for radiation curable Oxidant layer,
It is described viscous before radiation curing in T-type disbonded test under conditions of 23 DEG C and peeling rate 300mm/ minutes Peeling force between mixture layer and the adhesive layer is 2N/20mm or more.
7. cutting die bonding film according to claim 1, wherein the arithmetic on the surface of described adhesive layer is flat The difference of the arithmetic mean surface roughness on the surface of equal surface roughness and the adhesive layer is 100nm or less.
8. cutting die bonding film according to claim 1, wherein described adhesive layer contains acrylic Object, the acrylic polymer include：The 1st of (methyl) alkyl acrylate that carbon number from alkyl is 10 or more is single Member and the Unit the 2nd for deriving from (methyl) acrylic acid 2- hydroxyl ethyl esters.
9. cutting die bonding film according to claim 8, wherein the 1st is single described in the acrylic polymer Member is 1~40 relative to the molar ratio of Unit the 2nd.
10. cutting die bonding film according to claim 8, wherein the acrylic polymer is containing unsaturation The addition compound product of the isocyanate compound of functional group.
11. cutting die bonding film according to claim 10, wherein containing not described in the acrylic polymer The isocyanate compound of saturated functional groups is 0.1 or more relative to the molar ratio of Unit the 2nd.
12. the cutting die bonding film according to any one of claim 1~11, wherein described adhesive layer is spoke Ray curing adhesive phase,
It is described viscous after radiation curing in T-type disbonded test under conditions of 23 DEG C and peeling rate 300mm/ minutes Peeling force between mixture layer and the adhesive layer is 0.06~0.25N/20mm.
13. cutting die bonding film according to claim 12, wherein the outer circumference end of the adhesive layer is in pellicular front Interior direction is located at the distance within 1000 μm of the outer circumference end away from described adhesive layer.
14. the cutting die bonding film according to any one of claim 1~11, wherein outside the adhesive layer The directions in pellicular front Zhou Duan are located at the distance within 1000 μm of the outer circumference end away from described adhesive layer.
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