CN108728003A - Cut die bonding film - Google Patents

Cut die bonding film Download PDF

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Publication number
CN108728003A
CN108728003A CN201810345162.7A CN201810345162A CN108728003A CN 108728003 A CN108728003 A CN 108728003A CN 201810345162 A CN201810345162 A CN 201810345162A CN 108728003 A CN108728003 A CN 108728003A
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CN
China
Prior art keywords
adhesive layer
adhesive
bonding film
die bonding
cutting
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Withdrawn
Application number
CN201810345162.7A
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Chinese (zh)
Inventor
木村雄大
高本尚英
大西谦司
宍户雄郎
宍户雄一郎
福井章洋
井上真
井上真一
大和道子
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Nitto Denko Corp
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Nitto Denko Corp
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Publication of CN108728003A publication Critical patent/CN108728003A/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/241—Polyolefin, e.g.rubber
    • C09J7/243—Ethylene or propylene polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2423/00—Presence of polyolefin
    • C09J2423/04—Presence of homo or copolymers of ethene
    • C09J2423/046—Presence of homo or copolymers of ethene in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

Abstract

The present invention provides a kind of cutting die bonding film, is suitable for that adhesive layer is made to ensure the cutting off property in extending process and realizes the good bonding force to the frames component such as ring frame.The cutting die bonding film (X) of the present invention has cutting belt (10) and adhesive layer (20).Cutting belt (10) has the stepped construction comprising base material (11) and adhesive phase (12).Adhesive layer (20) and adhesive phase (12) are strippingly closely sealed.Storage tensile modulus at -15 DEG C measured under conditions of 5 DEG C/min of distance 10mm, frequency 10Hz, dynamic strain ± 0.5 μm and heating rate Initial grip between the adhesive layer coupons of width 4mm of adhesive layer (20) is 1000~4000MPa, and the storage tensile modulus at 23 DEG C measured under the foregoing conditions is 10~240MPa.

Description

Cut die bonding film
Technical field
The present invention relates to the cutting die bonding films that can be used in the manufacturing process of semiconductor device.
Background technology
In the manufacturing process of semiconductor device, the size for carrying chip engagement in order to obtain is comparable bonding with chip The semiconductor chip of film, the semiconductor chip for carrying chip engagement adhesive layer are engaged using cutting chip thin sometimes Film.Die bonding film is cut with size corresponding with the semiconductor crystal wafer as processing object, such as with：Including base material And the cutting belt of adhesive phase；The strippingly closely sealed die bonding film (adhesive layer) in its adhesive phase side.
One of the method for semiconductor chip with adhesive layer is obtained as cutting die bonding film is used, it is known that warp Method by the process for cutting off die bonding film for being extended to the cutting belt in cutting die bonding film.It should In method, first, the laminated semiconductor wafer on the die bonding film of cutting die bonding film.The semiconductor crystal wafer is for example To be cut off later with together with die bonding film can monolithic turn to multiple semiconductor chips in a manner of processed.It connects It, in order to generate closely sealed multiple adhering film small pieces on a semiconductor die respectively by the die bonding film in cutting belt Mode the die bonding film is cut off, so that the cutting belt of cutting die bonding film is extended using expanding unit.In the expansion It opens up in process, in cutting off at the position of position in being equivalent to die bonding film, the semiconductor crystal wafer on die bonding film Also it cuts off, on cutting die bonding film and/or cutting belt, semiconductor crystal wafer monolithic turns to multiple semiconductor chips. Then, it for multiple semiconductor chips with adhesive layer after cutting off in cutting belt, in order to expand spacing distance, carries out Extension process again.Then, in the needle-shaped structure by after such as cleaning process, passing through mechanism for picking from the downside of cutting belt Part with and its closely sealed size jack up each semiconductor chip together with the comparable die bonding film of chip, then, from cutting belt Upper pickup semiconductor chip.As above operation obtains carrying the die bonding film i.e. semiconductor chip of adhesive layer.It should be with viscous The semiconductor chip for connecing oxidant layer is fixed on by chip engagement on the adherends such as installation base plate by its adhesive layer.For for example The relevant technologies of the cutting die bonding film used as above, are recorded in for example following Patent Documents 1 to 3.
Existing technical literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2007-2173 bulletins
Patent document 2：Japanese Unexamined Patent Publication 2010-177401 bulletins
Patent document 3：Japanese Unexamined Patent Publication 2012-23161 bulletins
Invention content
Problems to be solved by the invention
Figure 14 indicates existing cutting die bonding film Y with diagrammatic cross-section.Cutting die bonding film Y includes to cut Cut band 60 and die bonding film 70.Cutting belt 60 is the stepped construction of base material 61 and the adhesive phase 62 for playing bonding force.Core Chip bonding film 70 is closely sealed by the bonding force and adhesive phase 62 of adhesive phase 62.Such cutting die bonding film Y tools There is size disc corresponding with the semiconductor crystal wafer of processing object and/or workpiece in the manufacturing process as semiconductor device Shape can be used for above-mentioned extension process.Such as shown in figure 15, semiconductor crystal wafer 81 fit in die bonding film 70 and Ring frame 82 implements above-mentioned extension process in the state of being attached at adhesive phase 62.Semiconductor crystal wafer 81 is for example turned to energy monolithic The mode of multiple semiconductor chips is processed.
Ring frame 82 be in the state of being attached at cutting die bonding film Y, conveying arm for having of expanding unit etc. it is defeated Send the frame component mechanically abutted when mechanism conveying workpieces.Existing cutting die bonding film Y is with such ring frame 82 The mode that can be fixed on the film by the bonding force of the adhesive phase 62 of cutting belt 60 designs.That is, existing cutting core Chip bonding film Y has ensures that ring frame is bonded in the adhesive phase 62 of cutting belt 60 around die bonding film 70 With the design in region.In such design, the outer circumference end 62e of the adhesive phase 62 and outer circumference end 70e of die bonding film 70 Between pellicular front in the distance in direction be 10~30mm or so.
The present invention be in view of the foregoing and the invention made, it is intended that provide a kind of cutting chip engage it is thin Film is suitable for that adhesive layer is made to ensure to extend the cutting off property in process and realizes the excellent bonds to the frames component such as ring frame Power.
The solution to the problem
Cutting die bonding film provided by the invention has cutting belt and adhesive layer.Cutting belt have comprising base material and The stepped construction of adhesive phase.Adhesive layer and the adhesive phase in cutting belt are strippingly closely sealed.Adhesive layer to width The adhesive layer coupons of 4mm distance 10mm, frequency 10Hz, dynamic strain ± 0.5 μm and heating rate 5 between Initial grip DEG C/min condition (storage tensile modulus determination condition) under storage tensile modulus at measure -15 DEG C (the 1st stretches energy storage Modulus) it is 1000~4000MPa, preferably 1200~3900MPa, more preferably 1500~3800MPa.Also, adhesive layer The adhesive layer coupons to width 4mm measured under aforementioned storage tensile modulus determination condition 23 DEG C at stretching energy storage Modulus (the 2nd storage tensile modulus) is 10~240MPa, preferably 20~200MPa, more preferably 40~150MPa.It is such The cutting die bonding film of composition can be used in obtaining partly leading with adhesive layer in the manufacturing process of semiconductor device Body chip.
In the manufacturing process of semiconductor device, as described above, carrying the semiconductor chip of adhesive layer in order to obtain, have When implement using cutting die bonding film carry out extension process, the extension process for cutting off, in the extension process, The frames such as the workpiece such as semiconductor crystal wafer and ring frame component is needed to be held in cutting die bonding film and as adhesive layer Die bonding film can be cut off by the extension of cutting belt.The adhesive layer institute as above of this cutting die bonding film It is 1000~4000MPa, preferably 1200~3900MPa, more preferably 1500 to state the 1st storage tensile modulus at -15 DEG C ~3800MPa.Such extension work constituted for implementing under for -15 DEG C of the temperature lower than room temperature and its neighbouring temperature It is suitable for cutting off adhesive layer in sequence, also, for being realized to the frames component such as ring frame by the adhesive layer It is suitable for good bonding force.Also, the adhesive layer of this cutting die bonding film is as described above at 23 DEG C 2nd storage tensile modulus is 10~240MPa, preferably 20~200MPa, more preferably 40~150MPa.Such composition pair In making the adhesive layer for instance in room temperature realize to the good bonding force of the frames component such as ring frame before and after extending process Speech is suitable.As described above, this cutting die bonding film is suitable for that adhesive layer is made to ensure to extend the cutting off property in process And realize the good bonding force to frame component.
This such cutting die bonding film can be to include that workpiece fitting region and frame paste in its adhesive layer Share the mode in region with substantially the same size design cutting belt in the direction in pellicular front and/or its adhesive phase with thereon Adhesive layer.For example, in the face of cutting die bonding film direction may be used, the outer circumference end of adhesive layer is located at away from cutting Cut the design at the distance within the base material of band, 1000 μm of each outer circumference end of adhesive phase.This such cutting chip engagement is thin Film is suitable for disposably implementing to be used to form the stepped construction with base material and adhesive phase by processing such as a punch press process A cutting belt processing and be used to form the processing of an adhesive layer.
In the manufacturing process of above-mentioned existing cutting die bonding film Y, need to be used to form predetermined size and shape Cutting belt 60 manufacturing procedure (the 1st manufacturing procedure) and be used to form the die bonding film 70 of predetermined size and shape Manufacturing procedure (the 2nd manufacturing procedure) is used as process independent of each other.In 1st manufacturing procedure, for example, for having defined isolation The stacking of body, the substrate layer that base material 61 can be formed as and the adhesive phase for being formed as adhesive phase 62 positioned at the meeting between them The stacking sheet body of structure implements the processing for making processing knife be entered to from substrate layer side until reaching slider.As a result, on slider The cutting belt 60 of the stepped construction with adhesive phase 62 and base material 61 be formed on slider.In 2nd manufacturing procedure, example Such as, for the laminates with defined slider and the stepped construction for the adhesive layer that die bonding film 70 can be formed as Body implements the processing for making processing knife be entered to from adhesive layer side until reaching slider.Chip is formed on slider as a result, Bonding film 70.Later by 70 position pair of the cutting belt 60 formed like this by process independent of each other and die bonding film Standard is simultaneously bonded.Figure 16 shows the existing of the slider 83 with covering 70 surface of die bonding film and 62 surface of adhesive phase Cutting die bonding film Y.
In contrast, cutting belt and/or its adhesive phase are with adhesive layer thereon, the direction in pellicular front has essence The cutting die bonding film of present invention when upper identical design size is suitable for primary by processing such as a punch press process Property implement to be used to form the processing of a cutting belt of the stepped construction with base material and adhesive phase and be used to form one it is viscous Connect the processing of oxidant layer.This such cutting die bonding film is suitable for the cutting off property for making adhesive layer ensure in extending process And it realizes to the good bonding force of frame component, also, from cutting down the viewpoint of manufacturing process's number, inhibit the viewpoint of manufacturing cost Etc. setting out, it is suitable for high efficiency manufacture.
The adhesive layer of this cutting die bonding film is in -15 DEG C, 180 ° of peel angle and tensile speed 300mm/ minutes Under conditions of disbonded test in SUS planes show preferred 1N/10mm or more, more preferable 1.5N/10mm or more, further It is preferred that 180 ° of peel adhesions of 2N/10mm or more.In addition, to SUS in the disbonded test of the adhesive layer under the same conditions Plane shows such as 100N/10mm or less, preferably 50N/10mm 180 ° of peel adhesions below.The structure about bonding force In pairs in ensure under -15 DEG C of the temperature lower than room temperature and its neighbouring temperature based on this cutting die bonding film It is suitable for the holding of frame component.
The adhesive layer of this cutting die bonding film is in 23 DEG C, 180 ° of peel angle and tensile speed 300mm/ minutes Under the conditions of disbonded test in SUS planes show preferred 0.3N/10mm or more, more preferable 0.4N/10mm or more, further It is preferred that 180 ° of peel adhesions of 0.5N/10mm or more.In addition, right in the disbonded test of the adhesive layer under the same conditions SUS planes show such as 20N/10mm or less, preferably 10N/10mm 180 ° of peel adhesions below.About being somebody's turn to do for bonding force It constitutes for ensuring the holding of the frame component based on this cutting die bonding film under 23 DEG C and its neighbouring temperature It is suitable.
The base material of this cutting die bonding film preferably comprises ethylene-vinyl acetate copolymer.It is such constitute for The good heat-shrinkable for ensuring base material 11 is heat-shrinked using the part of cutting belt and/or base material to maintain to expand by separation It is suitable for the chip spacing distance that exhibition process is realized.
The adhesive layer of this cutting die bonding film preferably comprises the polymerization that glass transition temperature is -10~10 DEG C Object.Such composition is suitable for ensuring adhesive layer for the stickiness of the workpieces such as wafer.In addition, in this way Composition for seek adhesive layer at the room temperature of ring frame and its neighbouring temperature stickiness and prevent stripping when residue Take into account for be suitable.
The adhesive layer of this cutting die bonding film is with preferably 30 mass % or less, more preferable 25 mass % ratios below Example contains filler.Such patch constituted for ensuring adhesive layer to ring frame in the extension process implemented under such as low temperature It is suitable for conjunction property.
The adhesive layer of this cutting die bonding film is with preferably 50~100 mass %, more preferable 50~80 mass % Ratio contains high molecular weight components.High molecular weight components refer to the ingredient of 10000 or more weight average molecular weight.It is such constitute for Seek adhesive layer under the room temperature of ring frame and its neighbouring temperature stickiness and when preventing stripping for the taking into account of residue It is suitable.
The adhesive layer of this cutting die bonding film is with the ratio of preferably 1~10 mass %, more preferable 1~5 mass % Contain liquid resin.Such composition is for seeking adhesive layer to the stickiness at the room temperature of ring frame and its neighbouring temperature Be suitable for the taking into account of residue when preventing stripping.
Description of the drawings
Fig. 1 is the diagrammatic cross-section of the cutting die bonding film of an embodiment of the invention.
Fig. 2 indicates an example for the case where cutting die bonding film shown in FIG. 1 carries slider.
Fig. 3 indicates an example of the manufacturing method of cutting die bonding film shown in FIG. 1.
Fig. 4 indicates a part of work in the manufacturing method for semiconductor device using cutting die bonding film shown in FIG. 1 Sequence.
Fig. 5 indicates the subsequent handling of process shown in Fig. 4.
Fig. 6 indicates the subsequent handling of process shown in fig. 5.
Fig. 7 indicates the subsequent handling of process shown in fig. 6.
Fig. 8 shows the subsequent handlings of process shown in Fig. 7.
Fig. 9 indicates the subsequent handling of process shown in Fig. 8.
Figure 10 is indicated in the variation using the manufacturing method for semiconductor device of cutting die bonding film shown in FIG. 1 A part of process.
Figure 11 is indicated in the variation using the manufacturing method for semiconductor device of cutting die bonding film shown in FIG. 1 A part of process.
Figure 12 is indicated in the variation using the manufacturing method for semiconductor device of cutting die bonding film shown in FIG. 1 A part of process.
Figure 13 is indicated in the variation using the manufacturing method for semiconductor device of cutting die bonding film shown in FIG. 1 A part of process.
Figure 14 indicates the diagrammatic cross-section of existing cutting die bonding film.
Figure 15 indicates to cut the occupation mode of die bonding film shown in Figure 14.
Figure 16 indicates to cut a kind of supply form of die bonding film shown in Figure 14.
Reference sign
X cuts die bonding film
10 cutting belts
11 base materials
11e outer circumference ends
12 adhesive phases
12e outer circumference ends
20,21 adhesive layers
20e outer circumference ends
W, 30A, 30C semiconductor crystal wafer
30B semiconductor crystal wafer dividing bodies
30a slot segmentations
30b modification areas
31 semiconductor chips
Specific implementation mode
Fig. 1 is the diagrammatic cross-section of the cutting die bonding film X of an embodiment of the invention.Cut chip engagement Film X has the stepped construction comprising cutting belt 10 and adhesive layer 20.Cutting belt 10, which has, includes base material 11 and adhesive phase 12 stepped construction.Adhesive phase 12 has adhesive surface 12a in 20 side of adhesive layer.Adhesive layer 20 includes workpiece fitting area Domain and frame fitting region, and it is strippingly closely sealed with the adhesive phase of cutting belt 10 12 and/or its adhesive surface 12a.Cutting During die bonding film X can be used for obtaining the semiconductor chip with adhesive layer in the manufacture of semiconductor device For example aftermentioned extension process in.In addition, cutting die bonding film X has in size and the manufacturing process of semiconductor device Processing object the corresponding disc-shape of semiconductor crystal wafer, diameter such as (12 inches of crystalline substances in the range of 345~380mm The corresponding type of circle), (6 inch wafers pair in the range of (8 inch wafers correspond to type), 195~230mm in the range of 245~280mm Answer type) or 495~530mm in the range of (18 inch wafers correspond to type).
The base material 11 of cutting belt 10 is worked as supporter in cutting belt 10 and/or cutting die bonding film X Component.Base material 11 suitable can use such as plastic basis material (especially plastic film).Composition material as the plastic basis material Material, such as can enumerate：Polyvinyl chloride, polyolefin, polyester, polyurethane, makrolon, polyether-ether-ketone, gathers Vingon Acid imide, polyetherimide, polyamide, fully aromatic polyamide, polyphenylene sulfide, aromatic polyamides, fluororesin, cellulose-based tree Fat and organic siliconresin.As polyolefin, such as can enumerate：Low density polyethylene (LDPE), straight-chain low density polyethylene (LDPE), in Density polyethylene, high density polyethylene (HDPE), ultra-low density polyethylene, atactic copolymerized polypropene, block copolymerization polypropylene, homopolymerization poly- third Alkene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene-(methyl) acrylic acid Copolymer, ethylene-(methyl) acrylate copolymer, ethylene-butene copolymer and ethylene-hexene co-polymers.As polyester, Such as polyethylene terephthalate (PET), polyethylene naphthalate and poly terephthalic acid fourth two can be enumerated Alcohol ester (PBT).Base material 11 can be formed of one material, and can also be formed by two kinds or more materials.Base material 11 can have single Layer structure, it is possible to have multilayered structure.From the good heat-shrinkable for ensuring base material 11, cutting belt 10 and/or base material are utilized 11 part is heat-shrinked to maintain from the perspective of extending the chip spacing distance that process is realized by aftermentioned separation, base material 11 preferably comprise ethylene-vinyl acetate copolymer as main component.The principal component of base material 11 refers to being accounted in constituent The ingredient of maximum mass ratio.Can be non-stretched film or list in addition, when base material 11 is formed by plastic film Axis oriented film can also be biaxially oriented film.When adhesive phase 12 on base material 11 is ultraviolet hardening as described later, Base material 11 preferably has ultraviolet light permeability.
In cutting die bonding film X's in use, making cutting belt 10 and/or base material 11 shrink for example, by local heating In the case of, base material 11 preferably has heat-shrinkable.In addition, in the case that base material 11 is formed by plastic film, for cutting belt 10 and/or base material 11, in terms of realizing isotropic heat-shrinkable, base material 11 is preferably biaxially oriented film.Cutting belt 10 and/or the heat treatment experiment that is carried out under conditions of 100 DEG C of heating temperature and heating treatment time 60 seconds of base material 11 in Percent thermal shrinkage is preferably 2~30%, more preferably 2~25%, further preferably 3~20%, further preferably 5~ 20%.The percent thermal shrinkage refers at least one in the percent thermal shrinkage in the so-called directions MD and the percent thermal shrinkage in the so-called directions TD Person.
The surface of 12 side of adhesive phase of base material 11 can implement for improving and the object of the adaptation of adhesive phase 12 Reason processing, chemical treatment or primary coat processing.As physical treatment, such as can enumerate：Sided corona treatment, corona treatment, Sandblasting working process, ozone exposure processing, fire exposure processing, high-voltage electric shock exposure treatment and ionization radial line processing.As Chemical treatment, such as chromic acid processing can be enumerated.For improving adhesive phase of the processing of adaptation preferably to base material 11 The entire surface of 12 sides is implemented.
The thickness of base material 11 is from ensuring base material 11 as cutting belt 10 and/or the supporter hair of cutting die bonding film X From the perspective of the intensity for waving effect, preferably 40 μm or more, more preferably 50 μm or more, further preferably 55 μm or more, Further preferably 60 μm or more.In addition, realizing the flexible sight of appropriateness from cutting belt 10 and/or cutting die bonding film X Point sets out, and the thickness of base material 11 is preferably 200 μm or less, more preferably 180 μm or less, further preferably 150 μm or less.
The adhesive phase 12 of cutting belt 10 contains adhesive.Adhesive can be that can pass through irradiation with radiation, heating etc. Intentionally make the adhesive (bonding force reduction type adhesive) that bonding force reduces from external effect, or bonding force is several Or it can be cut completely according to using not because of the adhesive (the non-reduced type adhesive of bonding force) reduced from external effect It cuts die bonding film X and carries out method, condition of singualtion of semiconductor chip of singualtion etc. suitable for selection.
As the adhesive in adhesive phase 12, when using bonding force reduction type adhesive, in cutting die bonding film X Manufacturing process, during use, state and display phase that adhesive phase 12 shows relatively high bonding force can be used separately To the state of low bonding force.For example, in the adhesive phase 12 of cutting belt 10 in the manufacturing process of cutting die bonding film X When upper fitting adhesive layer 20, cut die bonding film X be used for defined wafer cutting action when, adhesive can be utilized The state of the 12 relatively high bonding force of display of layer come inhibit to prevent the floating of the equal adherends autoadhesion oxidant layer of adhesive layer 20 12, On the other hand stripping is being used for semiconductor of the pickup of cutting belt 10 with adhesive layer from cutting die bonding film X later In the pickup process of chip, the bonding force of adhesive phase 12 can be made to reduce, can suitably be picked up with viscous from adhesive phase 12 Connect the semiconductor chip of oxidant layer.
As such bonding force reduction type adhesive, such as Radiation curing adhesive can be enumerated (with spoke The adhesive of ray-curable), thermal expansion type adhesive etc..In the adhesive phase 12 of present embodiment, one kind can be used Bonding force reduction type adhesive can also use two kinds or more bonding force reduction type adhesives.Furthermore, it is possible to be adhesive phase 12 Whole to be formed by bonding force reduction type adhesive, the part that can also be adhesive phase 12 bonds dosage form by bonding force reduction type At.For example, when adhesive phase 12 has single layer structure, can be that adhesive phase 12 is whole bonds dosage form by bonding force reduction type At can also be that predetermined portion in adhesive phase 12 is formed by bonding force reduction type adhesive, other positions are non-by bonding force Reduction type adhesive is formed.Can form whole layers of stepped construction by gluing in addition, when adhesive phase 12 has stepped construction Resultant force reduction type adhesive is formed, and can also be that a part of layer in stepped construction is formed by bonding force reduction type adhesive.
As the Radiation curing adhesive in adhesive phase 12, can be used for example by electron ray, ultraviolet light, Alpha ray, β rays, gamma-rays or X-ray irradiation and the adhesive of cured type, can the use of particularly suitable ground pass through purple Outside line is irradiated and the adhesive (ultraviolet-curing adhesive) of cured type.
As the Radiation curing adhesive in adhesive phase 12, such as addition type radiation curable can be enumerated Adhesive contains：The base polymers such as the acrylic polymer as acrylic adhesives；It polymerize with radiation Monomer component, the oligomer ingredient of the radiation polymerisms of functional groups such as the carbon-to-carbon double bond of property.
Above-mentioned acrylic polymer is preferably comprised to be made from the monomeric unit of acrylate and/or methacrylate For the most main monomer unit of mass ratio.Hereinafter, with " (methyl) acrylic acid " expression " acrylic acid " and/or " metering system Acid ".
As (methyl) acrylate for the monomeric unit for being used to form acrylic polymer, such as can enumerate： (methyl) alkyl acrylate, (methyl) acrylate base ester, (methyl) benzyl acrylate etc. contain alkyl (methyl) propylene Acid esters.As (methyl) alkyl acrylate, such as can enumerate：The methyl ester of (methyl) acrylic acid, ethyl ester, propyl Ester, isopropyl esters, butyl ester, isobutyl, sec-butyl ester, tertiary butyl ester, amyl ester, isoamyl base ester, hexyl ester, heptyl ester, Octyl ester, 2- ethylhexyls, isooctyl acrylate, nonyl ester, decyl ester, isodecyl base ester, hendecane base ester, dodecyl ester are (i.e. Lauryl Ester), tridecane base ester, tetradecane base ester, cetyl ester, stearyl and eicosane base ester.As (methyl) Acrylate base ester, such as the cyclopentyl ester and cyclohexyl ester of (methyl) acrylic acid can be enumerated.As (methyl) propylene Sour aryl ester, such as (methyl) phenyl acrylate and (methyl) benzyl acrylate can be enumerated.For as third (methyl) acrylate of the principal monomer of alkene acids polymers can be a kind of (methyl) acrylate, or two kinds (methyl) acrylate above.The bases such as the adhesiveness dependent on (methyl) acrylate are suitably shown making adhesive phase 12 In terms of this characteristic, it is used to form (methyl) acrylate as principal monomer in whole monomer components of acrylic polymer Ratio be preferably 40 mass % or more, more preferably 60 mass % or more.
Acrylic polymer can also include from can be with (methyl) third to be modified its cohesive force, heat resistance etc. The monomeric unit of other monomers of olefin(e) acid ester copolymerization.As such monomer component, such as can enumerate：Carboxyl group-containing monomer, Anhydride monomers, contain glycidyl monomer, monomer containing sulfonic group, phosphorous acid-based monomers, acrylamide and third at hydroxyl monomer Alkene nitrile etc. is containing monomer etc..As carboxyl group-containing monomer, such as can enumerate：Acrylic acid, methacrylic acid, (methyl) third Olefin(e) acid carboxyethyl, (methyl) acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid and crotonic acid.As anhydride monomers, Such as maleic anhydride and itaconic anhydride can be enumerated.As hydroxyl monomer, such as can enumerate：(methyl) acrylic acid 2- Hydroxyethyl ester, (methyl) acrylic acid 2- hydroxy-propyl esters, (methyl) acrylic acid 4- hydroxybutyls, (methyl) acrylic acid 6- hydroxyls Hexyl ester, (methyl) acrylic acid 8- hydroxy octyls ester, (methyl) acrylic acid 10- hydroxydecyl methacrylates, (methyl) acrylic acid 12- hydroxyls Lauryl Ester and (methyl) acrylic acid (4- Hydroxymethyl-cyclo-hexyls) methyl esters.As containing glycidyl monomer, such as can arrange Enumerate (methyl) glycidyl acrylate and (methyl) acrylic acid methylglycidyl esters.As monomer containing sulfonic group, such as It can enumerate：Styrene sulfonic acid, allyl sulphonic acid, 2- (methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide Propane sulfonic acid, sulfopropyl (methyl) acrylate and (methyl) propane sulfonic acid.As phosphorous acid-based monomers, such as can To enumerate 2- hydroxylethyl acyl phosphates.As other monomers for acrylic polymer, one can be used Kind monomer can also use two kinds or more monomers.It suitably shows to depend on (methyl) acrylate making adhesive phase 12 The fundamental characteristics such as adhesiveness in terms of, be used to form other monomer components in whole monomer components of acrylic polymer Ratio is preferably 60 mass % or less, preferably 40 mass % or less.
Acrylic polymer can include from can be with conduct to form cross-linked structure in its polymer backbone The monomeric unit of the multi-functional monomer of the monomer components such as (methyl) acrylate of principal monomer copolymerization.As such more officials Energy property monomer, such as can enumerate：Hexylene glycol two (methyl) acrylate, (poly-) ethylene glycol two (methyl) acrylate, (poly-) propylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, pentaerythrite two (methyl) acrylate, Trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) acrylate, dipentaerythritol six (methyl) propylene Acid esters, epoxy (methyl) acrylate (i.e. poly epihydric alcohol base (methyl) acrylate), polyester (methyl) acrylate and ammonia Carbamate (methyl) acrylate.As the multi-functional monomer for acrylic polymer, a kind of more officials can be used Energy property monomer, can also use two kinds or more multi-functional monomers.It is used to form whole monomer components of acrylic polymer In the ratio of multi-functional monomer so that adhesive phase 12 is suitably shown the adhesiveness dependent on (methyl) acrylate The aspect of equal fundamental characteristics, preferably 40 mass % or less, preferably 30 mass % or less.
The starting monomer for being used to form it can polymerize by acrylic polymer to be obtained.As polymerization, such as It can enumerate：Polymerisation in solution, emulsion polymerization, bulk polymerization and suspension polymerisation.From use cutting belt 10 and/or cutting chip From the perspective of the high level of cleanliness of the manufacturing method for semiconductor device of bonding film X, preferably cutting belt 10 and/or cutting chip Low molecular weight substance in the adhesive phase 12 of bonding film X is less, and the number-average molecular weight of acrylic polymer is preferably 10 Ten thousand or more, 200,000~3,000,000 are more preferably.
Adhesive phase 12 and/or its adhesive is used to form in order to improve the base polymers such as acrylic polymer Number-average molecular weight, such as external crosslinker can be contained.As for being reacted with base polymers such as acrylic polymers and The external crosslinker for forming cross-linked structure, can enumerate：Polyisocyanate compound, epoxide, polyol compound (polynary phenol system compound etc.), aziridine cpd and melamine series crosslinking agent.Adhesive phase 12 and/or it is used to form it Adhesive in the content of external crosslinker relative to 100 mass parts of base polymer be preferably 5 below mass part, more preferable For 0.1~5 mass parts.
As being used to form the above-mentioned radiation polymerizable monomer ingredient of Radiation curing adhesive, such as can enumerate Go out：Carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) propylene Acid esters, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol six (methyl) acrylate and 1,4- butanediols two (methyl) acrylate.As being used to form Radiation curing adhesive Above-mentioned radiation polyreactive oligomers ingredient, such as carbamate system, polyether system, Polyester, makrolon can be enumerated The various oligomer such as system, polybutadiene system, the substance of molecular weight 100~30000 or so is suitable.Radiation curable bonds The monomer component of radiation polymerism in agent, the total content of oligomer ingredient are in the bonding that can make to be formed by adhesive phase 12 Power determines in the range of suitably reducing, relative to the base polymers such as acrylic polymer 100 mass parts, for example, 5~ 500 mass parts, preferably 40~150 mass parts.In addition, the Radiation curing adhesive as addition type, such as can make The substance disclosed in Japanese Unexamined Patent Application 60-196956 bulletins.
As the Radiation curing adhesive in adhesive phase 12, such as can also enumerate：Included in polymer side In chain, main polymer chain, main polymer chain end have radiation polymerism the functional groups such as carbon-to-carbon double bond base polymer Inherent type Radiation curing adhesive.Such inherence type Radiation curing adhesive is inhibiting to be formed by adhesive It is suitable in terms of the undesirable ongoing change for moving caused adhesion characteristic by low molecular weight compositions in layer 12.
As base polymer contained in inherent type Radiation curing adhesive, preferably acrylic polymer is made For basic framework.As the acrylic polymer of basic framework as formation, above-mentioned acrylic polymer may be used. As the method for importing radiation polymerism carbon-to-carbon double bond to acrylic polymer, such as following method can be enumerated： After so that the copolymerization of the starting monomer comprising the monomer with defined functional group (the 1st functional group) is obtained acrylic polymer, Make that there is energy and react and the defined functional group (the 2nd functional group) being bonded and radiation polymerism between the 1st functional group The compound of carbon-to-carbon double bond contracts in the state of maintaining the radiation polymerism of carbon-to-carbon double bond with acrylic polymer Close reaction or addition reaction.
As the combination of the 1st functional group and the 2nd functional group, such as can enumerate：Carboxyl and epoxy group, epoxy group and carboxylic Base, carboxyl and '-aziridino, '-aziridino and carboxyl, hydroxyl and isocyanate group, isocyanate group and hydroxyl.These combinations In, from the viewpoint of the easy degree of reactive tracing, the combination of hydroxyl and isocyanate group, the group of isocyanate group and hydroxyl Conjunction is suitable.In addition, the technical difficulty for making the polymer with isocyanate group with high reactivity is high, from acrylic polymer From the perspective of the easy degree for closing making or the acquisition of object, above-mentioned 1st functional group of acrylic polymer side be hydroxyl and The case where above-mentioned 2nd functional group is isocyanate group is preferably.In this case, as there is radiation polymerism simultaneously The isocyanate compound of carbon-to-carbon double bond and isocyanate group as the 2nd functional group, such as can enumerate：Metering system Acyl isocyanate, 2- methacryloxyethyls isocyanates and isopropenyl-bis (alpha, alpha-dimethylbenzyl) base isocyanic acid Ester.In addition, as the acrylic polymer with the 1st functional group, including from the monomeric unit of above-mentioned hydroxyl monomer Substance be suitable, including from 2- hydroxyethyl vinylethers, 4- hydroxybutyl vinyl ethers, diethylene glycol monovinyl base The substance of the monomeric unit of the ethers based compound such as ether is also suitable.
Radiation curing adhesive in adhesive phase 12 preferably comprises Photoepolymerizationinitiater initiater.Cause as photopolymerization Agent, such as can enumerate：α -one alcohol based compound, acetophenone based compound, benzoin ether based compound, ketal system chemical combination Object, aromatic sulfonyl based compound, photolytic activity oxime compound, benzophenone based compound, thioxanthones based compound, camphor Quinone, halogenated ketone, acylphosphine oxide and acyl phosphonate.As α -one alcohol based compounds, such as can enumerate：4- (2- hydroxyls Ethyoxyl) phenyl (2- hydroxyl -2- propyl) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, 2- methyl -2- hydroxypropiophenonepreparations and 1- hydroxycyclohexylphenylketones.As acetophenone based compound, such as can enumerate：Methoxyacetophenone, 2,2- dimethoxies Base -1,2- diphenylethane -1- ketone, 2,2- diethoxy acetophenones and 2- methyl-1s-[4- (methyl mercapto)-phenyl] -2- morpholines For propane -1.As benzoin ether based compound, such as can enumerate：Benzoin ethyl ether, benzoin isopropyl ether and fennel Fragrant acyloin methyl ether.As ketal based compound, such as benzil dimethyl ketal can be enumerated.As aromatic sulfonyl Based compound, such as 2- naphthalene sulfonyl chlorides can be enumerated.As photolytic activity oxime compound, such as can enumerate：1- phenyl- 1,2- propanedione -2- (O- ethoxy carbonyls) oxime.As benzophenone based compound, such as can enumerate：Benzophenone, benzene Formylbenzoate and 3,3'- dimethyl -4- methoxy benzophenones.As thioxanthones based compound, such as can enumerate Go out：Thioxanthones, 2-chlorothioxanthone, 2- methyl thioxanthones, 2,4- dimethyl thioxanthones, isopropyl thioxanthone, 2,4- dichloro thioxanthenes Ketone, 2,4- diethyl thioxanthones and 2,4- diisopropylthioxanthones.Light in the Radiation curing adhesive of adhesive phase 12 The content of polymerization initiator is such as 0.05~20 mass relative to 100 mass parts of the base polymers such as acrylic polymer Part.
Above-mentioned thermal expansion type adhesive in adhesive phase 12 (is sent out to contain the ingredient for foaming, expanding by heating Infusion, heat-expandable microsphere etc.) adhesive when, as foaming agent, various inorganic system's foaming agents and organic system can be enumerated Foaming agent as heat-expandable microsphere, such as can enumerate the substance enclosed in shell and be easy gasification expansion by heating Made of the microballoon that constitutes.As inorganic system's foaming agent, such as can enumerate：Ammonium carbonate, ammonium hydrogen carbonate, sodium bicarbonate, Asia Ammonium nitrate, sodium borohydride and Azide species.As organic system foaming agent, such as can enumerate：F-11, two The azo compounds such as chlorine fluoric ether, azobis isobutyronitrile, azodicarbonamide, the Barium azodicarboxylates such as one fluoromethane of chlorine, Unifor, diphenyl sulfone -3,3'- disulfonyl hydrazides, 4,4'- oxos bis- (benzene sulfonyl hydrazides), allyl bis- (sulfohydrazides) etc. Semicarbazides based compound, the 5- such as hydrazine based compound, p-toluene sulfonylsemicarbazide, 4,4'- oxos bis- (benzenesulfonylamino ureas) Three azole compounds and the N such as quinoline base -1,2,3,4- thiatriazoles, N'- dinitrosopentamethylene tetramines, N, N'- dimethyl - The N- nitroso based compounds such as N, N'- dinitrosoterephthalamine.As be used to form above-mentioned heat-expandable microsphere, It is easy the substance of gasification expansion by heating, such as iso-butane, propane and pentane can be enumerated.By using coacervation, boundary Face polymerization etc. will be easy by heating in the enclosed shell forming material of substance of gasification expansion, can make heat-expandable microsphere. As shell forming material, it can use and show the substance of hot melt property, can be broken by the effect of the thermal expansion of enclosed substance The substance split.As such substance, such as vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl alcohol can be enumerated Butyral, polymethyl methacrylate, polyacrylonitrile, Vingon and polysulfones.
As the non-reduced type adhesive of above-mentioned bonding force, such as can enumerate：The pre- irradiation with radiation that first passes through makes viscous Adhesive, the Pressuresensitive Adhesive etc. of the cured form of Radiation curing adhesive described in resultant force reduction type adhesive. In the adhesive phase 12 of present embodiment, a kind of non-reduced type adhesive of bonding force can be used, two kinds or more can also be used The non-reduced type adhesive of bonding force.It is formed by the non-reduced type adhesive of bonding force in addition it is also possible to be that adhesive phase 12 is whole, also Can be that the part of adhesive phase 12 is formed by the non-reduced type adhesive of bonding force.For example, adhesive phase 12 has single layer knot When structure, can be that adhesive phase 12 is whole be formed by the non-reduced type adhesive of bonding force, can also be the rule in adhesive phase 12 Determine that position is formed by the non-reduced type adhesive of bonding force, other positions are formed by bonding force reduction type adhesive.In addition, adhesive Can form whole layers of stepped construction to be formed by the non-reduced type adhesive of bonding force, also may be used when layer 12 has stepped construction To be that a part of layer in stepped construction is formed by the non-reduced type adhesive of bonding force.
First passing through irradiation with radiation makes adhesive (the irradiation with radiation mistake of the cured form of Radiation curing adhesive in advance Radiation curing adhesive) even if bonding force is reduced by irradiation with radiation, also show that due to contained polymerization The adhesiveness of object ingredient can play the bonding force of the minimum needed for cutting belt adhesive phase in cutting action etc..This implementation In mode, when the Radiation curing adhesive crossed using irradiation with radiation, in the face propagation direction of adhesive phase 12, Ke Yishi Adhesive phase 12 is whole to be formed by the Radiation curing adhesive that irradiation with radiation is crossed, and can also be one of adhesive phase 12 It point is formed by the Radiation curing adhesive that irradiation with radiation is crossed and other parts is by the non-irradiated radiation curing of radiation Type adhesive is formed.
Include the cutting core for the Radiation curing adhesive that irradiation with radiation is crossed at least part of adhesive phase 12 Chip bonding film X can for example be manufactured via following process.First, it is formed by radiation on the base material 11 of cutting belt 10 The adhesive phase (radiation-curable adhesive layer) that curing adhesive obtains.Then, to the Radiation curing adhesive A defined part or overall exposure radiation for layer, forms the radiation curable that at least part is crossed comprising irradiation with radiation The adhesive phase of adhesive.Then, the adhesive layer of aftermentioned adhesive layer 20 is formed on the adhesive phase.Later, By for example aftermentioned disposable processing forming method to these adhesive phases and adhesive layer, it is formed simultaneously adhesive phase 12 And adhesive layer 20.Include cutting for the Radiation curing adhesive that irradiation with radiation is crossed at least part of adhesive phase 12 It cuts die bonding film X or can also be manufactured via following process.First, on the base material 11 of cutting belt 10 formed by The adhesive phase (radiation-curable adhesive layer) that Radiation curing adhesive obtains.Then, in the radiation curable The adhesive layer of aftermentioned adhesive layer 20 is formed on adhesive phase.Then, to the rule of radiation-curable adhesive layer A fixed part or overall exposure radiation is formed in the radiation curable bonding that at least part is crossed comprising irradiation with radiation The adhesive phase of agent.Thereafter, by for example aftermentioned disposable processing forming method to these adhesive phases and adhesive layer, It is formed simultaneously adhesive phase 12 and adhesive layer 20.
On the other hand, as the Pressuresensitive Adhesive in adhesive phase 12, known and usual adhesive can be used, It suitable can use acrylic adhesives, the elastomeric adhesive using acrylic polymer as basic polymer.Bonding When oxidant layer 12 contains acrylic adhesives as Pressuresensitive Adhesive, base polymer as the acrylic adhesives Acrylic polymer is preferably comprised from the monomeric unit of (methyl) acrylate main list most as mass ratio Body unit.As such acrylic polymer, such as can enumerate in third described in Radiation curing adhesive Alkene acids polymers.
It adhesive phase 12 and/or is used to form in its adhesive, on the basis of above-mentioned each ingredient, can also contain and hand over Join colorants such as accelerating agent, tackifier, anti-aging agent, pigment, dyestuff etc..Colorant can be coloured by irradiation with radiation Compound.As such compound, such as leuco dye can be enumerated.
The thickness of adhesive phase 12 is preferably 1~50 μm, more preferably 2~30 μm, further preferably 5~25 μm.This Being formed in when for example adhesive phase 12 includes Radiation curing adhesive for sample obtains the adhesive phase 12 in radiation curing It is suitable in terms of the balance of the front and back bonding force to adhesive layer 20.
The adhesive layer 20 of cutting die bonding film X has both the bonding for showing Thermocurable as chip engagement The function of agent and adhesive function for keeping the frames component such as the workpiece such as semiconductor crystal wafer and ring frame.In present embodiment, use There can be the heat comprising heat-curing resin and as such as Binder Composition in the bonding bonding agent for forming adhesive layer 20 The composition of plastic resin, it is possible to have comprising with the heat of Thermocurable functional group that can be reacted and be bonded with curing agent The composition of plastic resin.The bonding bonding agent for being used to form adhesive layer 20 has comprising the thermoplastic with Thermocurable functional group When the composition of property resin, which need not include heat-curing resin (epoxy resin etc.).Such adhesive layer 20 Can with single layer structure, can also be with multilayered structure.
It has both as the effect of chip engagement bonding agent and the adhesive layer 20 of adhesive effect in the bonding to width 4mm Oxidant layer coupons distance 10mm, frequency 10Hz, 5 DEG C/min of dynamic strain ± 0.5 μm and heating rate between Initial grip Storage tensile modulus (the 1st storage tensile modulus) at -15 DEG C measured under condition (storage tensile modulus determination condition) is 1000~4000MPa, preferably 1200~3900MPa, more preferably 1500~3800MPa.Also, adhesive layer 20 is to width Storage tensile modulus at the adhesive layer coupons measured under aforementioned storage tensile modulus determination condition 23 DEG C of degree 4mm (the 2nd storage tensile modulus) is 10~240MPa, preferably 20~200MPa, more preferably 40~150MPa.It is stored up for stretching Energy modulus can be based on using measurement of dynamic viscoelasticity device (trade name " Rheogel-E4000 ", UBM corporations) progress Measurement of Dynamic Viscoelasticity is found out.In the measurement, width 4mm × length will be set as the size of the coupons of measuring object Distance between the Initial grip of coupons holding clamp is set as 10mm, mode determination is set as stretch mode, will be measured by 20mm Temperature range is set as -30 DEG C~100 DEG C, and frequency is set as 10Hz, and dynamic strain is set as ± 0.5 μm, speed is will heat up and is set as 5 DEG C/min.
It has both as the effect of chip engagement bonding agent and the adhesive layer 20 of adhesive effect in -15 DEG C, peel angle Preferred 1N/ is shown to SUS planes in disbonded test under 180 ° and 300mm/ minutes conditions of tensile speed (the 1st condition) 180 ° of peel adhesions of 10mm or more, more preferable 1.5N/10mm or more, further preferred 2N/10mm or more.The aforementioned 1st Under the conditions of disbonded test in, which shows such as 100N/10mm or less, preferably 50N/10mm to SUS planes 180 ° of peel adhesions below.In addition, adhesive layer 20 is in 23 DEG C, 180 ° of peel angle and tensile speed 300mm/ minutes In disbonded test under condition (the 2nd condition) to SUS planes show preferred 0.3N/10mm or more, more preferable 0.4N/10mm with 180 ° of peel adhesions of upper, further preferred 0.5N/10mm or more.In disbonded test under the conditions of the aforementioned 2nd, the bonding Oxidant layer 20 shows such as 20N/10mm or less, preferably 10N/10mm 180 ° of peel adhesions below to SUS planes.For this 180 ° of peel adhesions of sample can use cupping machine (trade name " Autograph AGS-J ", Shimano Inc's system Make made) it measures.Coupons for the measurement utilize facing rubber band (trade name " BT-315 ", Nitto Denko Corp System) carry out lining, and the size with width 10mm × length 100mm.Patch of the coupons to the SUS plates as adherend Conjunction is carried out by making reciprocal 1 crimping operation of the roller of 2kg.In addition, in this measurement, measuring temperature and/or exfoliation temperature are set For -15 DEG C (the 1st conditions) or 23 DEG C (the 2nd conditions), peel angle is set as 180 °, and tensile speed is set as 300mm/ minutes.
When adhesive layer 20 includes heat-curing resin and thermoplastic resin, as the heat-curing resin, such as can be with Enumerate epoxy resin, phenolic resin, amino resins, unsaturated polyester resin, polyurethane resin, organic siliconresin and thermosetting The property changed polyimide resin.When forming adhesive layer 20, can use a kind of heat-curing resin, can also use two kinds with Upper heat-curing resin.For the ionic impurity corroded with the semiconductor chip that may result in chip coalesced object etc. The reasons why poor tendency, as heat-curing resin, preferred epoxy contained in adhesive layer 20.In addition, conduct The curing agent of epoxy resin, preferably phenolic resin.
As epoxy resin, such as can enumerate：Bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenation Bisphenol A-type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol novolak type, ortho cresol novolak type, trihydroxy phenyl The ring of methane type, four hydroxy phenyl ethane types, hydantoins type, triglycidyl group isocyanurate type and glycidic amine type Oxygen resin.Phenolic resin varnish type epoxy resin, biphenyl type epoxy resin, trihydroxy benzene methylmethane type epoxy resin and four hydroxyphenyls Ethane type epoxy resin is imbued with the reactivity with the phenolic resin as curing agent, and excellent heat resistance, it is therefore preferable that conduct Epoxy resin contained in adhesive layer 20.
For the phenolic resin that can be worked as the curing agent of epoxy resin, such as can enumerate：Phenolic varnish type Phenolic resin, resol type phenol resin and poly- to the polyoxies styrene such as oxygen styrene.As novolak phenolics, example It can such as enumerate：Phenol resol resins, phenol aralkyl resin, cresol novolac resin, tert-butyl phenol phenolic aldehyde Varnish gum and nonyl phenol novolac resin.It, can for the phenolic resin that can be worked as the curing agent of epoxy resin To use a kind of phenolic resin, two kinds or more phenolic resin can also be used.Phenol resol resins, phenol aralkyl resin It is reliable with the connection that can improve the bonding agent in the curing agent as the epoxy resin as chip engagement bonding agent The tendency of property, it is therefore preferable that the curing agent as epoxy resin contained in adhesive layer 20.
In adhesive layer 20, from the viewpoint of so that the curing reaction of epoxy resin and phenolic resin is fully carried out, with this Hydroxyl in phenolic resin reaches preferably 0.5~2.0 equivalent, more preferably relative to 1 equivalent of epoxy group in epoxy resin ingredient The amount of 0.8~1.2 equivalent includes phenolic resin.
As thermoplastic resin contained in adhesive layer 20, such as can enumerate：It is natural rubber, butyl rubber, different Pentadiene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate The polyamide resins such as copolymer, polybutadiene, polycarbonate resin, thermoplastic polyimide resin, 6- nylon, 6,6- nylon The saturated polyester resins such as fat, phenoxy resin, acrylic resin, PET, PBT, polyamide-imide resin and fluororesin.? When forming adhesive layer 20, a kind of thermoplastic resin can be used, two kinds or more thermoplastic resins can also be used.As bonding Thermoplastic resin contained in oxidant layer 20, for ionic impurity is few and heat resistance is high and it is easy to ensure that based on adhesive layer 20 The reasons why joint reliability, preferably acrylic resin.In addition, from take into account adhesive layer 20 to the room temperature of aftermentioned ring frame and its For stickiness at neighbouring temperature with from the perspective of residue when preventing from removing, adhesive layer 20 preferably comprises glass transition temperature Principal component of the polymer that degree is -10~10 DEG C as thermoplastic resin.The principal component of thermoplastic resin refers in thermoplastic resin The resin component of maximum mass ratio is accounted in fat ingredient.
For the glass transition temperature of polymer, the glass transition temperature found out based on following Fox formulas can be used (theoretical value).Fox formulas are the homopolymer of the glass transition temperature Tg and each composition monomer in the polymer of polymer The relational expression of glass transition temperature Tg i.In following Fox formulas, Tg indicates that the glass transition temperature (DEG C) of polymer, Wi indicate The weight percent of the monomer i of the polymer is constituted, Tgi indicates the glass transition temperature (DEG C) of the homopolymer of monomer i.Homopolymerization The glass transition temperature of object can use literature value, such as " 7 coating of new peak molecular library is got started with synthetic resin " (Bei Gang associations Three write, and macromolecule prints and publishes meeting, nineteen ninety-five), in " acrylate goods catalogue (1997 year version) " (Mitsubishi Rayon Co., Ltd) List the glass transition temperature of various homopolymers.On the other hand, for the glass transition temperature of the homopolymer of monomer, The method specifically recorded in Japanese Unexamined Patent Publication 2007-51271 bulletins can be utilized to find out.
Fox formulas 1/ (273+Tg)=Σ [Wi/ (273+Tgi)]
The acrylic resin for including as thermoplastic resin in adhesive layer 20, which preferably comprises, derives from (methyl) third The monomeric unit of the olefin(e) acid ester main monomer unit most as mass ratio.As such (methyl) acrylate, such as The acrylic with an ingredient in the Radiation curing adhesive as 12 formation of adhesive phase can be used Same (methyl) acrylate of substance described in object.The acrylic compounds for including as thermoplastic resin in adhesive layer 20 Resin can include from can be with the monomeric unit of other monomers of (methyl) acrylic ester copolymer.As such other lists Body ingredient, such as can enumerate：Carboxyl group-containing monomer, hydroxyl monomer, contains glycidyl monomer, contains sulfonic acid anhydride monomers Base monomer, phosphorous acid-based monomers, acrylamide, acrylonitrile etc. contain monomer, various multi-functional monomers, specifically, The acrylic with an ingredient in the Radiation curing adhesive as 12 formation of adhesive phase can be used As the same monomer of monomer that can be recorded with other monomers of (methyl) acrylic ester copolymer in object.From keeping adhesive layer 20 real From the perspective of existing high cohesive force, the acrylic resin contained in adhesive layer 20 is preferably (methyl) acrylate (especially alkyl carbon number be 4 (methyl) alkyl acrylates below), carboxyl group-containing monomer, nitrogen atom monomer with it is multifunctional Property monomer (especially poly epihydric alcohol base system polyfunctional monomer) copolymer, more preferably ethyl acrylate, butyl acrylate, The copolymer of acrylic acid, acrylonitrile and poly epihydric alcohol base (methyl) acrylate.
The content ratio of heat-curing resin in adhesive layer 20 is suitably shown as heat from making adhesive layer 20 From the perspective of the effect of curing type bonding agent, preferably 5~60 mass %, more preferably 10~50 mass %.
When adhesive layer 20 includes the thermoplastic resin with Thermocurable functional group, as the thermoplastic resin, such as The acrylic resin containing Thermocurable functional group can be used.It is used to form the acrylic acid for containing Thermocurable functional group The acrylic resin of resinoid preferably comprises the monomeric unit from (methyl) acrylate as mass ratio at most Main monomer unit.As such (methyl) acrylate, can be used for example and as 12 formation of adhesive phase Same (methyl) acrylate of substance described in the acrylic polymer of one ingredient of Radiation curing adhesive. On the other hand, as the Thermocurable functional group for being used to form the acrylic resin containing Thermocurable functional group, such as can To enumerate glycidyl, carboxyl, hydroxyl and isocyanate group.Wherein it is possible to suitable for using glycidyl and carboxyl. That is, as the acrylic resin containing Thermocurable functional group, suitable the acrylic compounds tree containing glycidyl can be used Fat, carboxylic acrylic resin.In addition, the curing agent as the acrylic resin containing Thermocurable functional group, example It such as can be used as the outside of an ingredient of the Radiation curing adhesive for being sometimes considered as 12 formation of adhesive phase The substance that crosslinking agent is recorded.Thermocurable functional group in acrylic resin containing Thermocurable functional group is glycidol When base, as curing agent, above-mentioned various phenolic resin can be used for example suitable for using polynary phenol system compound.
For the adhesive layer 20 before curing for chip engagement, in order to realize a degree of degree of cross linking, For example, it is preferable to will react and be bonded more with functional group of the molecule chain end of above-mentioned resin etc. contained in adhesive layer 20 Functionality compounds are compounded in as crosslinking agent in advance in adhesive layer formation resin combination.Such be formed in makes bonding It is suitable that oxidant layer 20, which improves the aspect of adhesion properties at high temperature and seeks the improvement aspect of heat resistance,.As in this way Crosslinking agent, such as polyisocyanate compound can be enumerated.As polyisocyanate compound, such as can enumerate： Toluene di-isocyanate(TDI), methyl diphenylene diisocyanate, paraphenylene diisocyanate, 1,5- naphthalene diisocyanates and polyalcohol With the addition compound product of diisocyanate.For the content of the crosslinking agent in adhesive layer formation resin combination, relative to tool 100 mass parts of resin for having the above-mentioned functional group that can be reacted and be bonded with the crosslinking agent, adhesive layer 20 is formed by from raising Cohesive force from the perspective of, it is more than preferably 0.05 mass parts, from improve be formed by adhesive layer 20 bonding force sight Point sets out, and preferably 7 is below mass part.In addition, as the crosslinking agent in adhesive layer 20, it can be other more by epoxy resin etc. Functionality compounds are applied in combination with polyisocyanate compound.
The content ratio of above such high molecular weight components in adhesive layer 20 is preferably 50~100 mass %, more Preferably 50~80 mass %.High molecular weight components refer to the ingredient of 10000 or more weight average molecular weight.Such be formed in is sought Adhesive layer 20 at the room temperature of aftermentioned ring frame and its neighbouring temperature stickiness and prevent stripping when residue it is simultaneous It is preferred in terms of Gu.In addition, adhesive layer 20 may be embodied in the liquid resin for liquid at 23 DEG C.Adhesive layer 20 includes When such liquid resin, the liquid resinous content ratio in adhesive layer 20 is preferably 1~10 mass %, is more preferably 1~5 mass %.Such be formed in seeks adhesive layer 20 to the fitting at the room temperature of aftermentioned ring frame and its neighbouring temperature Property and prevent stripping when residue take into account aspect be preferred.
Adhesive layer 20 can contain filler.By being compounded filler in adhesive layer 20, adhesive layer 20 can be adjusted The physical property such as elasticity modulus, electric conductivity, the thermal conductance such as storage tensile modulus.As filler, inorganic filler can be enumerated and had Machine filler, particularly preferred inorganic filler.As inorganic filler, such as can enumerate：Aluminium hydroxide, magnesium hydroxide, calcium carbonate, Magnesium carbonate, calcium silicates, magnesium silicate, calcium oxide, magnesia, aluminium oxide, aluminium nitride, aluminium borate whisker, boron nitride, crystalline silica The metal simple-substances such as silicon, amorphous silica and aluminium, gold, silver, copper, nickel, alloy, amorphous carbon black, graphite.Filler can be with With spherical, needle-shaped, laminar etc. variously-shaped.As the filler in adhesive layer 20, a kind of filler can be used, it can also Use two kinds or more fillers.In terms of adhesive layer 20 is to the stickiness of ring frame in ensuring aftermentioned low temperature extension process, glue It is preferably 30 mass % or less, more preferably 25 mass % or less to connect the filler content ratio in oxidant layer 20.
The average grain diameter of filler when adhesive layer 20 is containing filler is preferably 0.005~10 μm, is more preferably 0.005 ~1 μm.The average grain diameter of the filler, which is 0.005 μm or more is formed in, makes the realization of adhesive layer 20 glue semiconductor crystal wafer etc. The high wettability of object, cementability aspect are suitable.The average grain diameter of the filler is 10 μm and below is formed in adhesive layer 20 It is suitable in terms of obtaining sufficient filler additive effect and ensuring heat resistance.The average grain diameter of filler uses such as light The particle size distribution meter (trade name " LA-910 ", Horiba Ltd make) of degree formula is found out.
Adhesive layer 20 can include other ingredients as needed.As other ingredients, such as can enumerate：It is fire-retardant Agent, silane coupling agent and ion trap agent.As fire retardant, such as antimony trioxide, antimony pentaoxide and bromination can be enumerated Epoxy resin.As silane coupling agent, such as can enumerate：β-(3,4- epoxycyclohexyls) ethyl trimethoxy silane, γ- Glycidoxypropyltrime,hoxysilane and γ-glycidoxypropyl diethoxy silane.As ion trap Agent, such as can enumerate：Hydrotalcite, bismuth hydroxide, the aqua oxidation antimony (such as " IXE- of Toagosei Co., Ltd 300 "), the basic zirconium phosphate (such as " IXE-100 " of Toagosei Co., Ltd) of specific structure, magnesium silicate (such as consonance chemistry Industrial Co., Ltd " Kyoward 600 ") and alumina silicate (such as Kyowa Chemical Industry Co., Ltd " Kyoward 700").The compound that complex compound can be formed between metal ion can also be used as ion trap agent use.As suchization Object is closed, such as can be enumerated：Three azole compounds, four azole compounds and bipyridyl based compound.Wherein, from metal From the perspective of the stability of the complex compound formed between ion, preferably three azole compounds.As such triazole system chemical combination Object, such as can enumerate：L, 2,3 triazole, 1- { bis- (2- ethylhexyls) amino methyls of N, N- } benzotriazole, carboxyl Benzotriazole, 2- (2- hydroxy-5-methyl bases phenyl) benzotriazole, 2- (2- hydroxyl -3,5- di-tert-butyl-phenyls) -5- chlorobenzenes and three Azoles, 2- (2- hydroxyl -3- tertiary butyl -5- aminomethyl phenyls) -5- chlorobenzotriazoles, 2- (2- hydroxyl -3,5- di-tert-pentyl-phenyls) benzene And triazole, 2- (2- hydroxyl -5- t-octyls phenyl) benzotriazole, 6- (2 benzotriazole base) -4- t-octyl -6'- tertiary butyls - 4'- methyl -2,2' methylene bis phenol, 1- (2,3- dihydroxypropyls) benzotriazole, 1- (1,2- dicarboxyls diethyl) benzo three Azoles, 1- (2- ethylhexylaminos methyl) benzotriazole, bis- tertiary pentyl -6- of 2,4- { (H- benzotriazole -1- bases) methyl } phenol, 2- (2- hydroxyl -5- tert-butyl-phenyls) -2H- benzotriazole, octyl -3- [3- tertiary butyl-4-hydroxies -5- (the chloro- 2H- benzos of 5- three Azoles -2- bases) phenyl] propionic ester, 2- ethylhexyls -3- [3- tertiary butyl-4-hydroxies -5- (the chloro- 2H- benzotriazole -2- bases of 5-) benzene Base] propionic ester, 2- (2H- benzotriazole -2- bases) -6- (1- methyl-1s-phenylethyl) -4- (1,1,3,3- tetramethyl butyls) benzene Phenol, 2- (2H- benzotriazole -2- bases) -4-TBP, 2- (2- hydroxy-5-methyl bases phenyl) benzotriazole, 2- (2- hydroxyls - 5- t-octyls phenyl)-benzotriazole, 2- (3- tertiary butyl -2- hydroxy-5-methyl bases phenyl) -5- chlorobenzotriazoles, 2- (2- hydroxyls - 3,5- di-tert-pentyl-phenyls) benzotriazole, 2- (2- hydroxyl -3,5- di-tert-butyl-phenyls) chloro- benzotriazole of -5-, 2- [2- hydroxyls Base -3,5- two (1,1- dimethyl benzyls) phenyl] -2H- benzotriazole, 2,2' methylene bis [6- (2H- benzotriazole -2- Base) -4- (1,1,3,3- tetramethyl butyls) phenol], 2- [bis- (bis (alpha, alpha-dimethylbenzyl) base) phenyl of 2- hydroxyls -3,5-] -2H- benzos Triazole and methyl -3- [3- (2H- benzotriazole -2- bases) -5- tert-butyl-hydroxy phenyls] propionic ester.In addition, hydroquinone Hydroxy-containing compounds, which can also be used as ion trap agent, as defined in compound, hydroxy-anthraquione compound, polyphenol compound etc. makes With.As such hydroxy-containing compounds, specific examples thereof include：1,2- benzenediols, alizarin, 1,5- dihydroxy anthraquinones, tannic acid, Gallic acid, gallicin, pyrogallol etc..As above such other ingredients, a kind of ingredient can be used, also may be used To use two kinds or more ingredients.
Range of the thickness of adhesive layer 20 at such as 1~200 μm.The upper limit of the thickness is preferably 100 μm, is more preferably 80μm.The lower limit of the thickness is preferably 3 μm, more preferably 5 μm.
In present embodiment, the direction D in the face of cutting die bonding film X, the outer circumference end 20e of adhesive layer 20 are located at Outer circumference end 11e away from the base material 11 in cutting belt 10 and within 12e1000 μm of the outer circumference end of adhesive phase 12, preferably 500 μm with At interior distance.That is, the complete cycle of the outer circumference end 20e of adhesive layer 20 direction D in pellicular front is located at the outer circumference end 11e of base material 11 1000 μm of 1000 μm of inside to outside between, preferably between 500 μm of 500 μm of inside to outside, also, be located at adhesive phase 12 Outer circumference end 12e 1000 μm of 1000 μm of inside to outside between, preferably between 500 μm of 500 μm of inside to outside.Cutting belt 10 And/or the direction D in face has in this composition of substantially the same size its adhesive phase 12 with adhesive layer 20 thereon, Adhesive layer 20 includes the region in the region and frame fitting of workpiece fitting.
Cutting die bonding film X can carry slider S as shown in Figure 2.Specifically, can be each cutting chip The form of sheets of the bonding film X with slider S can also be that slider S is strip, is configured with multiple cuttings on it Die bonding film X and slider S wind and are formed as the form of volume.Slider S is thin for the engagement of coating cutting chip The surface of the adhesive layer 20 of film X and the element protected are removed the film when using cutting die bonding film X. As slider S, such as can enumerate：Polyethylene terephthalate (PET) film, polyethylene film, polypropylene are thin Film, the plastic film that surface coating has been carried out with removers such as fluorine system remover, long-chain aliphatic acrylate series stripping agents, stationery Deng.The thickness of slider S is such as 5~200 μm.
It for example can be such as manufacture of getting off with above such cutting die bonding film X constituted.
Sheet body for be processed to form the cutting belt 10 to cut die bonding film X can as shown in (a) of Fig. 3 To be processed to form as the adhesive phase of adhesive phase 12 by being arranged on being processed to form the base material 11' for base material 11 12' makes.The base material 11' of resin can be by rolling film method, the casting method in organic solvent, blowing in enclosed system The film-forming methods such as swollen extrusion molding, T moulds extrusion molding, coetrusion, dry lamination method make.For after film film and/or Base material 11' implements defined surface treatment as needed.In the formation of adhesive phase 12', such as preparing adhesive phase shape At binder solution after, first, which is coated on base material 11' or on defined slider, formed Adhesive film.As the coating method of binder solution, such as can enumerate：Roll coating, silk screen coating and intaglio plate apply It covers.Then, cross-linking reaction is brought it about as needed by heating for the adhesive film, in addition, carrying out as needed Desolventizing.Heating temperature is such as 80~150 DEG C, and heating time is such as 0.5~5 minute.Adhesive phase 12' is formed in isolation When on body, the adhesive phase 12' with the slider is fitted in into base material 11', later removes slider.As above operation, energy It is enough to make the adhesive tape 10' as sheet body that be processed to form as cutting belt 10.
On the other hand, as shown in (b) of Fig. 3, the adhesive film 20' that be processed to form as adhesive layer 20 is made. In the making of adhesive film 20', after the adhesive composite for preparing adhesive layer formation, first, by the bonding agent Composition is coated on slider S, forms adhesive composite layer.As the coating method of adhesive composite layer, such as can To enumerate roll coating, silk screen coating and rotogravure application.Then, for the adhesive composite layer, by heating, as needed Cross-linking reaction is brought it about, in addition, carrying out desolventizing as needed.Heating temperature is such as 70~160 DEG C, for heating time Such as 1~5 minute.As above operation, can make the adhesive film 20' with slider S.
In the manufacture of cutting die bonding film X, then, as shown in (c) of Fig. 3, by the adhesive of above-mentioned adhesive tape 10' The layer sides 12' crimp and are bonded with adhesive film 20'.Making as a result, has comprising slider S, adhesive film 20', bonding The stacking sheet body of the stepped construction of oxidant layer 12' and base material 11'.In this process, binding temperature is such as 30~50 DEG C, is preferably 35~45 DEG C.Laminate pressure (line pressure) is such as 0.1~20kgf/cm, preferably 1~10kgf/cm.Adhesive phase 12 is as above When the described radiation-curable adhesive layer, ultraviolet light is irradiated to adhesive phase 12' after the fitting of adhesive film 20' When israds, irradiation with radiation is carried out to adhesive phase 12' from the sides such as base material 11' of adhesive tape 10', exposure is for example 50~500mJ/cm2, preferably 100~300mJ/cm2.Its irradiation area is adhesive that for example will be closely sealed with adhesive layer 20 Layer 12 is whole.In addition, in the present invention, adhesive phase 12' and/or adhesive phase 12 are designed as ultraviolet hardening israds When the adhesive phase of curing type, adhesive film 20' and/or adhesive layer 20 also have not because of the irradiation of ultraviolet light israds And cured composition.
Then, as shown in (d) of Fig. 3, to above-mentioned stacking sheet body implementation make processing knife from the sides base material 11' enter to arrival every Processing (schematically showing off-position with thick line in (d) of Fig. 3) until in vitro S.For example, making stacking sheet body along a side Moved to F with fixed speed, at the same make to configure in the way of it can surround the axle center orthogonal with direction F and be rotated and The surface companion with processing knife of the rotating roller (illustration omitted) of the band processing knife of processing knife of the roller surface with punch press process It is connected to 11 ' the side of base material of stacking sheet body with having regulation extruding force.As a result, disposably processing formed cutting belt 10 (base material 11, Adhesive phase 12) and adhesive layer 20, cutting die bonding film X is formed on partition board S.Then, as shown in (e) of Fig. 3, from Material laminated section on partition board S around removal cutting die bonding film X.
As above operation can manufacture cutting die bonding film X.
In the manufacturing process of semiconductor device, as described above, carrying the semiconductor chip of adhesive layer in order to obtain, have When implement use cutting die bonding film carry out extension process, the extension process for cutting off, in extending process, need The frames such as the workpiece such as semiconductor crystal wafer and ring frame component is wanted to be held in cutting die bonding film and as adhesive layer Die bonding film can be cut off by the extension of cutting belt.The adhesive layer of the cutting die bonding film X of the present invention 20 as described above, above-mentioned 1st storage tensile modulus at -15 DEG C be 1000~4000MPa, preferably 1200~3900MPa, More preferably 1500~3800MPa.It is such to constitute for for -15 DEG C and its neighbouring temperature at the temperature lower than room temperature It is suitable for cutting off adhesive layer 20 in the extension process of lower implementation, and for passing through the adhesive layer 20 realization pair It is suitable for the good bonding force of the frames component such as ring frame.Also, cut the adhesive layer 20 of die bonding film X such as Above-mentioned 2nd storage tensile modulus at 23 DEG C be 10~240MPa, preferably 20~200MPa, more preferably 40~ 150MPa.It is such to constitute for making the adhesive layer 20 for instance in room temperature realize to frames such as ring frames before and after extending process It is suitable for the good bonding force of component.As described above, cutting die bonding film X is suitable for keeping adhesive layer 20 true It protects the cutting off property in extending process and realizes the good bonding force to frame component.
The cutting chip for having the adhesive layer 20 for having both the cutting off property in bonding force and extension process to frame component connects Close film X has workpiece fitting region and frame fitting region in its adhesive layer 20.Such cutting chip is engaged Film X, can be with substantially the same size design cutting belt 10 and/or its adhesive phase 12 and adhesive layer 20 thereon. For example, following design may be used：Direction D, the outer circumference end 20e of adhesive layer 20 in the face of cutting die bonding film X At the distance within the outer circumference end 11e of the base material 11 away from cutting belt 10 and 1000 μm of the outer circumference end 20e of adhesive phase 12. Such cutting die bonding film X is suitable for disposably implementing to be used to form with base material by processing such as a punch press process 11 and adhesive phase 12 stepped construction a cutting belt 10 processing and be used to form the processing of an adhesive layer 20, Therefore, from cutting down the viewpoint of manufacturing process's number, inhibiting the viewpoint grade of manufacturing cost, it is suitable for efficiently manufacturing.
As described above, cutting die bonding film X is suitable for the cutting off property for making adhesive layer 20 ensure in extending process And it realizes the good bonding force to frame component, also, is suitable for efficiently manufacturing.
The adhesive layer 20 of die bonding film X is cut as described above in -15 DEG C, 180 ° of peel angle and tensile speed Preferred 1N/10mm or more, more preferable 1.5N/10mm are shown to SUS planes in disbonded test under conditions of 300mm/ minutes Above, 180 ° of peel adhesions of further preferred 2N/10mm or more.In addition, the adhesive layer 20 is as described above in identical item Such as 100N/10mm or less, preferably 50N/10mm 180 ° of strippings below are viscous to be shown to SUS planes in disbonded test under part With joint efforts.This composition about bonding force is ensuring to be based on cutting under for -15 DEG C of the temperature lower than room temperature and its neighbouring temperature It is suitable in terms of cutting the holding of the frame component of die bonding film X.
The adhesive layer 20 of die bonding film X is cut as described above in 23 DEG C, 180 ° of peel angle and tensile speed Preferred 0.3N/10mm or more, more preferable 0.4N/ are shown to SUS planes in disbonded test under conditions of 300mm/ minutes 180 ° of peel adhesions of 10mm or more, further preferred 0.5N/10mm or more.In addition, the adhesive layer 20 exists as described above 180 ° below of such as 20N/10mm or less, preferably 10N/10mm is shown to SUS planes in disbonded test under the same terms Peel adhesion.This composition about bonding force is ensuring under 23 DEG C and its neighbouring temperature based on cutting die bonding film It is suitable in terms of the holding of the frame component of X.
Fig. 4~Fig. 9 indicates the manufacturing method for semiconductor device of an embodiment of the invention.
In this manufacturing method for semiconductor device, first, as shown in (a) of Fig. 4 and (b) of Fig. 4, on semiconductor crystal wafer W Form slot segmentation 30a (slot segmentation formation process).Semiconductor crystal wafer W has the 1st face Wa and the 2nd face Wb.Semiconductor crystal wafer W's The 1st face sides Wa has been mounted with various semiconductor elements (illustration omitted) and has formd the semiconductor on the 1st face Wa Wire structures necessary to element etc. (illustration omitted).In this process, in the wafer processing adhesive tape T1 quilts with adhesive surface T1a It fits in after the 2nd face sides Wb of semiconductor crystal wafer W, the state of semiconductor crystal wafer W is maintained on wafer processing adhesive tape T1 Under the slot segmentation 30a of prescribed depth is formed using the rotating knifes such as cutter device in the 1st face sides Wa of semiconductor crystal wafer W.Slot segmentation 30a is that the gap for making semiconductor crystal wafer W be separated into semiconductor core blade unit (is schematically shown point in Fig. 4~Fig. 6 with thick line Cut slot 30a).
Then, as shown in (c) of Fig. 4, have the wafer processing adhesive tape T2 of adhesive surface T2a to semiconductor crystal wafer W The 1st face sides Wa fitting and wafer processing adhesive tape T1 from the stripping of semiconductor crystal wafer W.
Then, as shown in (d) of Fig. 4, pass through in the state of maintaining semiconductor crystal wafer W on wafer processing adhesive tape T2 Semiconductor crystal wafer W is thinned to defined thickness (wafer thinning process) by the grinding from the 2nd face Wb.Grinding can be with It is carried out using the abrasive machining device for having grinding grinding stone.By the wafer thinning process, energy is formed in the present embodiment Monolithic turns to the semiconductor crystal wafer 30A of multiple semiconductor chips 31.Semiconductor crystal wafer 30A specifically has in the wafer The 2nd face sides Wb will be singulated the position (interconnecting piece) of the position connection for multiple semiconductor chips 31.Semiconductor crystal wafer 30A In interconnecting piece thickness, i.e. between the front end of the 2nd face sides Wb of the 2nd face Wb and slot segmentation 30a of semiconductor crystal wafer 30A at a distance from It is such as 1~30 μm, preferably 3~20 μm.
Then, as shown in (a) of Fig. 5, the adhesive layer 20 to cutting die bonding film X is bonded by wafer processing glue The semiconductor crystal wafer 30A kept with T2.Later, as shown in (b) of Fig. 5, from semiconductor crystal wafer 30A by wafer processing adhesive tape T2 Stripping.When adhesive phase 12 in cutting die bonding film X is radiation-curable adhesive layer, cutting chip can be replaced Above-mentioned irradiation with radiation in the manufacturing process of bonding film X, semiconductor crystal wafer 30A to after the fitting of adhesive layer 20 from Ultraviolet light israds is irradiated in 11 side of base material to adhesive phase 12.Exposure is such as 50~500mJ/cm2, preferably 100~ 300mJ/cm2.To carry out reducing the region of the irradiation of measure in cutting die bonding film X as the bonding force of adhesive phase 12 (irradiation area R shown in FIG. 1) be such as adhesive phase 12 in 20 fit area of adhesive layer in addition to its peripheral part Region.
Then, after attaching ring frame 41 on the adhesive layer 20 in cutting die bonding film X, such as (a) institute of Fig. 6 Show, the cutting die bonding film X with semiconductor crystal wafer 30A is fixed on to the holding tool 42 of expanding unit.
Then, the 1st extension process (cooling extension process) under conditions of relative low temperature is carried out as shown in (b) of Fig. 6, it will Semiconductor crystal wafer 30A monolithics turn to multiple semiconductor chips 31, and the adhesive layer 20 for cutting die bonding film X is cut off For the adhesive layer 21 of small pieces, the semiconductor chip 31 with adhesive layer is obtained.In this process, expanding unit is made to have The jack-up component 43 of hollow cylindrical downside in the figure of cutting die bonding film X is connected to cutting belt 10 and rises, and presses According to along the two-dimensional directional radially and circumferentially including semiconductor crystal wafer 30A to being fitted with the cutting of semiconductor crystal wafer 30A The mode that the cutting belt 10 of die bonding film X is stretched is extended.The extension is so as to generate preferably 15 in cutting belt 10 The condition of tensile stress in the range of~32MPa, more preferable 20~32MPa carries out.Temperature strip in cooling extension process Part be such as 0 DEG C hereinafter, preferably -20~-5 DEG C, more preferably -15~-5 DEG C, further preferably -15 DEG C.Cooling extension Expansion rate (jacking up the speed that component 43 rises) in process is preferably 0.1~100mm/ seconds.In addition, in cooling extension process Propagation be preferably 3~16mm.
In this process, relatively thin and crackly position is cut off in semiconductor crystal wafer 30A, is occurred to semiconductor core The singualtion of piece 31.At the same time, in this process, the closely sealed adhesive layer with the adhesive phase 12 of the cutting belt 10 extended 20 deform in the closely sealed each region of each semiconductor chip 31 and are suppressed, on the other hand, point between semiconductor chip 31 It cuts at the opposite position of slot, does not generate such deformation inhibiting effect, in such a state, the stretching generated in cutting belt 10 Stress plays a role.As a result, the opposite position of slot segmentation in adhesive layer 20 between semiconductor chip 31 is cut off.This After process, as shown in (c) of Fig. 6, so that jack-up component 43 is declined and release the extended mode of cutting belt 10.
Then, the 2nd extension process under conditions of relatively-high temperature is carried out as shown in (a) of Fig. 7, is made with adhesive layer Distance (spacing distance) between semiconductor chip 31 is widened.In this process, the hollow cylindrical that again has expanding unit The component 43 that jacks up of shape rises and extends the cutting belt 10 for cutting die bonding film X.2nd extension process in temperature condition be Such as 10 DEG C or more, preferably 15~30 DEG C.For expansion rate (jacking up the speed that component 43 rises) in 2nd extension process Such as 0.1~10mm/ seconds, preferably 0.3~1mm/ seconds.In addition, the propagation in the 2nd extension process is such as 3~16mm.At this In process, the spacing distance of the semiconductor chip 31 with adhesive layer is made to widen to can be suitable by aftermentioned pickup process Degree of the ground from semiconductor chip 31 of the pickup of cutting belt 10 with adhesive layer.After this process, as shown in (b) of Fig. 7 So that jack-up component 43 is declined, releases the extended mode of cutting belt 10.Inhibiting to release carrying in cutting belt 10 after extended mode In terms of the spacing distance of the semiconductor chip 31 of adhesive layer narrows, preferably in cutting belt 10 before releasing extended mode The exterior portion of 31 holding area of semiconductor chip is heated, makes its contraction.
Then, as needed through cleaning solutions such as utilization water to the cutting with the semiconductor chip 31 with adhesive layer After the cleaning process cleaned with 10 31 side of semiconductor chip, as shown in figure 8, the pickup of Self cleavage band 10 carries bonding agent The semiconductor chip 31 (pickup process) of layer.For example, for the semiconductor chip 31 with adhesive layer as pickup object, Downside makes the acicular member 44 of mechanism for picking rise after cutting belt 10 is jacked up in the figure of cutting belt 10, utilizes Suction jig 45 is adsorbed holding.In pickup process, the jack-up speed of acicular member 44 is such as 1~100mm/ seconds, needle The jack-up amount of shape component 44 is such as 50~3000 μm.
Then, as shown in (a) of Fig. 9, by the semiconductor chip 31 with adhesive layer picked up by adhesive layer 21 are temporarily fixed to defined adherend 51.As adherend 51, it can be mentioned, for example：Lead frame, TAB (tape automated bondings； Tape Automated Bonding) film, circuit board, the semiconductor chip in addition made.Adhesive layer 21 is solid temporarily Shear bond power of the timing at 25 DEG C is preferably 0.2MPa or more, more preferably 0.2~10MPa relative to adherend 51.It is viscous The composition that the shear bond power for connecing oxidant layer 21 is 0.2MPa or more in aftermentioned wire bonding sequence for inhibiting due to super Acoustic vibration, heating and generated in adhesive layer 21 and the bonding plane of semiconductor chip 31 or adherend 51 shear-deformable and suitable It is suitable that ground, which carries out wire bonding,.In addition, shear bond power of the adhesive layer 21 when temporary fixed at 175 DEG C relative to Adherend 51 is preferably 0.01MPa or more, more preferably 0.01~5MPa.
Then, as shown in (b) of Fig. 9, electrode pad (illustration omitted) and the adherend 51 of semiconductor chip 31 are had Some portion of terminal (illustration omitted) are electrically connected (wire bonding sequence) by bonding wire 52.The electrode of semiconductor chip 31 Pole plate, the portion of terminal of adherend 51 and the connection of bonding wire 52 can be realized by the ultrasonic bonding with heating, with Carry out the mode of 21 heat cure of adhesive layer.As bonding wire 52, such as gold thread, aluminum steel or copper wire can be used. Lead heating temperature in wire bonding is such as 80~250 DEG C, preferably 80~220 DEG C.In addition, its heating time is the several seconds ~several minutes.
Then, as shown in (c) of Fig. 9, by for protecting semiconductor chip 31 on adherend 51, bonding wire 52 Semiconductor chip 31 is sealed (sealing process) by sealing resin 53.In this process, the heat cure of adhesive layer 21 is carried out.At this In process, such as sealing resin 53 formed by using the transfer molding technology that mold carries out.Structure as sealing resin 53 At material, such as epoxy system resin can be used.In this process, the heating temperature for being used to form sealing resin 53 is for example 165~185 DEG C, heating time is such as 60 seconds~several minutes.When sealing resin 53 is not abundant in this process (sealing process) When being cured, the rear curing process for making sealing resin 53 be fully cured is carried out after this process.Even if in sealing work In sequence in the case of the incomplete heat cure of adhesive layer 21, can also together it be glued with sealing resin 53 in rear curing process Connect the complete heat cure of oxidant layer 21.In rear curing process, heating temperature is such as 165~185 DEG C, and heating time is for example 0.5~8 hour.
As above operation, can manufacture semiconductor device.
In present embodiment, as described above, the semiconductor chip 31 with adhesive layer is temporarily fixed to adherend 51 Later, wire bonding sequence is carried out in the state that adhesive layer 21 is not up to complete heat cure.Instead of such composition, It, can also be after the semiconductor chip 31 with adhesive layer be temporarily fixed to adherend 51, in bonding agent in the present invention Wire bonding sequence is carried out again after 21 heat cure of layer.
In the manufacturing method of the semiconductor device of the present invention, wafer thinning process shown in Fig. 10 can be carried out to replace With reference to the above-mentioned wafer thinning process of (d) of Fig. 4.After the above process with reference to (c) of Fig. 4, in wafer shown in Fig. 10 In thinning process, in the state of maintaining semiconductor crystal wafer W on wafer processing adhesive tape T2, pass through the mill from the 2nd face Wb It cuts processing and the wafer is thinned to specific thickness, formed comprising multiple semiconductor chips 31 and be held in wafer processing adhesive tape The semiconductor crystal wafer dividing body 30B of T2.In this process, may be used by wafer be ground to slot segmentation 30a its own in the 2nd face Method (the 1st method) until the exposing of the sides Wb, can also be with the following method：Wafer is ground from the 2nd face sides Wb to will be to Up to slot segmentation 30a, then the extruding force effect of wafer is made to generate between slot segmentation 30a and the 2nd face Wb using grindstone and be split Line, to form semiconductor crystal wafer dividing body 30B (the 2nd method).According to used method suitable for determining (a) with reference to Fig. 4 With the slot segmentation 30a as formed above of (b) of Fig. 4, depth from the 1st face Wa.In Fig. 10, it is schematically shown with thick line Via slot segmentation 30a made of the 1st method or via slot segmentation 30a and coupled crackle made of the 2nd method.? In the present invention, the semiconductor crystal wafer dividing body 30B that operation as above makes can be fitted in into cutting instead of semiconductor crystal wafer 30A Die bonding film X, and carry out the above-mentioned each process with reference to Fig. 5~Fig. 9.
Semiconductor crystal wafer dividing body 30B is being fitted in cutting die bonding film by (b) expression of (a) and Figure 11 of Figure 11 The 1st extension process (cooling extension process) carried out after X.In this process, the hollow cylindrical that makes expanding unit have Jack-up component 43 be connected to cutting belt 10 in the figure of cutting die bonding film X and rise in downside, with along including partly leading The two-dimensional directional radially and circumferentially of body wafer dividing body 30B is to being fitted with the cutting core of semiconductor crystal wafer dividing body 30B The mode that the cutting belt 10 of chip bonding film X is stretched is extended.The extension with generate such as 1 in cutting belt 10~ 100MPa, tensile stress preferably in the range of 5~40MPa condition carry out.Temperature condition in this process is such as 0 DEG C Hereinafter, preferably -20~-5 DEG C, more preferably -15~-5 DEG C, further preferably -15 DEG C.Expansion rate in this process (jacking up the speed that component 43 rises) is preferably 1~500mm/ seconds.In addition, the propagation in this process is preferably 50~200mm. Cooling extension process in this way, the adhesive layer 20 of cutting die bonding film X are cut off adhesive layer 21 for small pieces, To obtain the semiconductor chip 31 with adhesive layer.It is viscous with the cutting belt 10 that is extended specifically, in this process The closely sealed adhesive layer 20 of the mixture layer 12 each region closely sealed in each semiconductor chip 31 of semiconductor crystal wafer dividing body 30B In, deformation is suppressed, and on the other hand, is not generated at the opposite positions the slot segmentation 30a between semiconductor chip 31 this Inhibiting effect is deformed, the tensile stress generated in cutting belt 10 in this state plays a role.As a result, in adhesive layer 20 In be cut off at the opposite position slot segmentation 30a between semiconductor chip 31.
In the manufacturing method for semiconductor device of the present invention, semiconductor crystal wafer 30A or semiconductor crystal wafer can also be replaced to divide Body 30B fits in the above-mentioned composition of cutting die bonding film X, and the semiconductor crystal wafer 30C for operating making as follows is made to fit in Cut die bonding film X.
As shown in (a) of Figure 12 and (b) of Figure 12, modification area 30b is formed first in semiconductor crystal wafer W.Semiconductor Wafer W has the 1st face Wa and the 2nd face Wb.The 1st face sides Wa in semiconductor crystal wafer W have been mounted with that various semiconductor elements (save Sketch map shows), and wire structures etc. (illustration omitted) necessary to the semiconductor element has been formd on the 1st face Wa.This In process, after the wafer processing adhesive tape T3 with adhesive surface T3a to be fitted in the 1st face sides Wa of semiconductor crystal wafer W, in crystalline substance The circle processing state that semiconductor crystal wafer W is maintained on adhesive tape T3, half-and-half leads from the side opposite with wafer processing adhesive tape T3 Body wafer W is located at the laser of inside wafer along its pre-segmentation line irradiation focal point, is melted using caused by Multiphoton Absorbtion Modification area 30b is formed in semiconductor crystal wafer W.Modification area 30b is for making semiconductor crystal wafer W be separated into semiconductor chip The crisp atenuator region of unit.On pre-segmentation line form modification area 30b's in semiconductor crystal wafer about by laser irradiation Method is documented in such as Japanese Unexamined Patent Publication 2002-192370 bulletins, the laser irradiation condition example in the embodiment It such as can be in the range of the following conditions suitable for adjustment.
< laser irradiation conditions >
(A) laser
(B) optically focused lens
100 times of multiplying power or less
NA 0.55
To 100% or less the transmissivity of optical maser wavelength
(C) it is placed with movement speed 280mm/ seconds or less of the mounting table of semiconductor substrate
Then, as shown in (c) of Figure 12, to maintain the state of semiconductor crystal wafer W on wafer processing adhesive tape T3, lead to Semiconductor crystal wafer W is thinned to defined thickness by the grinding crossed from the 2nd face Wb, and formation energy monolithic turns to multiple as a result, The semiconductor crystal wafer 30C (wafer thinning process) of semiconductor chip 31.In the present invention, it can be incited somebody to action instead of semiconductor crystal wafer 30A As above the semiconductor crystal wafer 30C that operation makes fits in cutting die bonding film X, and carries out with reference to the above-mentioned each of Fig. 5~Fig. 9 Process.
(a) of Figure 13 and (b) of Figure 13 is indicated after semiconductor crystal wafer 30C to be fitted in cutting die bonding film X The 1st extension process (cooling extension process) carried out.In this process, make the top for the hollow cylindrical that expanding unit has It plays the downside in the figure of cutting die bonding film X of component 43 to be connected to cutting belt 10 and rise, with along including semiconductor die The two-dimensional directional radially and circumferentially of circle 30C is to being fitted with the cutting of the cutting die bonding film X of semiconductor crystal wafer 30C It is extended with the mode that 10 are stretched.The extension is so as to generate such as 1~100MPa, preferably 5~40MPa in cutting belt 10 In the range of the condition of tensile stress carry out.Temperature condition in this process is such as 0 DEG C hereinafter, preferably -20~-5 DEG C, more preferably -15~-5 DEG C, further preferably -15 DEG C.Expansion rate in this process (jacks up the speed that component 43 rises Degree) it is preferably 1~500mm/ seconds.In addition, the propagation in this process is preferably 50~200mm.Cooling extension in this way Process, the adhesive layer 20 of cutting die bonding film X is cut off adhesive layer 21 for small pieces, to obtain carrying bonding agent The semiconductor chip 31 of layer.Specifically, in this process, in semiconductor crystal wafer 30C at fragile modification area 30b shape At crackle, monolithic turns to semiconductor chip 31.At the same time, in this process, the adhesive phase with the cutting belt 10 extended In the closely sealed each region of each semiconductor chip 31 of semiconductor crystal wafer 30C, deformation is pressed down 12 closely sealed adhesive layers 20 On the other hand system does not generate this deformation inhibiting effect, in the state at the position opposite with the crackle forming position of wafer The tensile stress generated in lower cutting belt 10 plays a role.As a result, in adhesive layer 20 between semiconductor chip 31 Crackle forming position is cut off at opposite position.
In addition, in the present invention, cutting die bonding film X can be used in obtaining as described above half with adhesive layer Conductor chip can be also used for obtaining carry adhesive layer half when being laminated multiple semiconductor chips and carrying out the installation of 3 dimensions Conductor chip.Both can be with adhesive layer 21 together sandwiched spacer between the semiconductor chip 31 of this 3 dimension installation, it can also Not sandwiched spacer.
Embodiment
(embodiment 1)
The making > of < cutting belts
In the reaction vessel for having condenser pipe, nitrogen ingress pipe, thermometer and agitating device, in nitrogen gas at 60 DEG C Under atmosphere to comprising 100 molar part of dodecylacrylate, acrylic acid 2- hydroxyethyls ester (2HEA) 20 molar part, relative to this 100 mass parts of a little monomer components are 0.2 mass parts as the benzoyl peroxide of polymerization initiator and as polymer solvent The mixture of toluene carries out stirring (polymerisation) in 10 hours.It is obtained as a result, containing acrylic polymer P1Polymer it is molten Liquid.Acrylic polymer P in the polymer solution1Weight average molecular weight (Mw) be 700,000.Then, in air at 50 DEG C To comprising containing acrylic polymer P under atmosphere1Polymer solution, 2- methacryloxyethyl isocyanates (MOI) mixture of the dibutyl tin laurate and as addition reaction catalyst carries out stirring (addition reaction) in 24 hours. In the reaction solution, the compounding amount of MOI is 20 molar parts relative to 100 molar part of above-mentioned dodecylacrylate, which matches Mixed amount is relative to acrylic polymer P1In from 2HEA unit and/or its hydroxyl total amount molar ratio be 1.This Outside, in the reaction solution, the compounding amount of dibutyl tin laurate is relative to acrylic polymer P1100 mass parts are 0.03 mass parts.By the addition reaction, obtain being included in acrylic polymer P of the side chain with methacrylate2 Polymer solution.Then, it adds in the polymer solution relative to acrylic polymer P2100 mass parts are 1 mass The polyisocyanate compound (trade name " Coronate L ", TOSOH Co., Ltd's system) of part and the photopolymerization of 2 mass parts cause Agent (trade name " Irgacure 651 ", 2,2- dimethoxy -1,2- diphenylethane -1- ketone, BASF AG's system) is mixed, Also, mixture addition toluene is diluted in such a way that the viscosity of the mixture at room temperature is 500mPas, is obtained Binder solution.Later, de- in the organosilicon of the PET sliders (38 μm of thickness) with the face for implementing silicone release processing In mould process face, using applicator coating adhesive solution, film is formed, heating in 2 minutes is carried out at 130 DEG C to the film It is dry, the adhesive phase of 10 μm of thickness is formed on PET sliders.Then, using laminating machine, in the exposed surface of the adhesive phase Base material (trade name " RB-0104 ", 130 μm of thickness, the Cangfu that fitting ethylene-vinyl acetate copolymer (EVA) is made at room temperature Weaving Co. Ltd. system).As above operation makes the cutting belt of embodiment 1.
The making > of < adhesive layers
By acrylic resin A1(ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate Copolymer, weight average molecular weight be 1,200,000, glass transition temperature be 0 DEG C, epoxide number 0.4eq/kg) 63 mass parts, solid-state phenol Urea formaldehyde (trade name " MEHC-7851SS " is solid-state at 23 DEG C, bright and chemical conversion Co. Ltd. system) 1 mass parts, liquid phenolic aldehyde tree Fat (trade name " MEH-8000H " is liquid at 23 DEG C, bright and chemical conversion Co. Ltd. system) 6 mass parts and silica filler (quotient The name of an article " SO-C2 ", average grain diameter be 0.5 μm, Co., Ltd.'s Admatechs systems) 30 mass parts be added in methyl ethyl ketone into Row mixing, adjusts concentration in such a way that viscosity at room temperature is 700mPas, obtains adhesive composite.Then, with reality In the silicone release process face for having applied the PET sliders (38 μm of thickness) in the face of silicone release processing, applied using applicator Cloth adhesive composite, forms film, and 2 minutes heat dryings are carried out at 130 DEG C to the film.As above operation, PET every The in vitro upper adhesive layer (10 μm of thickness) for making embodiment 1.
< cuts the making > of die bonding film
After above-mentioned cutting belt removes PET sliders, it will be exposed in cutting belt at room temperature using laminating machine Adhesive phase and with slider above-mentioned adhesive layer fitting, obtain stacking sheet body.Then, to the stacking sheet body, into enforcement Processing knife enters to the punch press process until reaching slider from the EVA substrate sides of cutting belt.It is formed on slider as a result, straight The cutting die bonding film of the disc-shape of diameter 370mm.Then, the adhesive phase of cutting belt is irradiated from substrate side ultraviolet Line.In ultraviolet light irradiation, using high-pressure sodium lamp, irradiation accumulated light is set as 350mJ/cm2.As above operation, making have Include the cutting die bonding film of the embodiment 1 of cutting belt and the stepped construction of adhesive layer.
(embodiment 2)
By acrylic resin A1Compounding amount be changed to 70 mass parts by 63 mass parts, by liquid phenolic resin (commodity Name " MEH-8000H ", bright and chemical conversion Co. Ltd. system) compounding amount be changed to 7 mass parts by 6 mass parts, and by silica The compounding amount of filler (trade name " SO-C2 ", Co., Ltd.'s Admatechs systems) is changed to 22 mass parts by 30 mass parts, removes this In addition, same as the adhesive layer of embodiment 1 to operate, adhesive layer (10 μ of thickness of embodiment 2 is made on PET sliders m).In addition, instead of the adhesive layer of embodiment 1, using the adhesive layer of embodiment 2, in addition to this, with cutting for embodiment 1 It cuts die bonding film equally to operate, makes the cutting die bonding film of embodiment 2.
(embodiment 3)
By acrylic resin A1Compounding amount be changed to 90 mass parts by 63 mass parts, by solid phenolic resin (commodity Name " MEHC-7851SS ", it is bright and chemical conversion Co. Ltd. system) compounding amount be changed to 2 mass parts by 1 mass parts, by liquid phenolic aldehyde The compounding amount of resin (trade name " MEH-8000H ", bright and chemical conversion Co. Ltd. system) is changed to 8 mass parts by 6 mass parts, and not It is in addition to this, bonding with embodiment 1 using silica filler (trade name " SO-C2 ", Co., Ltd.'s Admatechs systems) Oxidant layer equally operates, and the adhesive layer (10 μm of thickness) of embodiment 3 is made on PET sliders.In addition, instead of embodiment 1 Adhesive layer, it is in addition to this, same as the cutting die bonding film of embodiment 1 to grasp using the adhesive layer of embodiment 3 Make, makes the cutting die bonding film of embodiment 3.
(comparative example 1)
By acrylic resin A1Compounding amount be changed to 48 mass parts by 63 mass parts, by solid phenolic resin (commodity Name " MEHC-7851SS ", it is bright and chemical conversion Co. Ltd. system) compounding amount be changed to 6 mass parts by 1 mass parts, do not use liquid Phenolic resin (trade name " MEH-8000H ", bright and chemical conversion Co. Ltd. system), and by silica filler (trade name " SO- C2 ", Co., Ltd.'s Admatechs systems) compounding amount be changed to 46 mass parts by 30 mass parts, in addition to this, with embodiment 1 Adhesive layer equally operates, the adhesive layer (10 μm of thickness) of comparison example 1 on PET sliders.In addition, instead of embodiment 1 adhesive layer, it is in addition to this, same as the cutting die bonding film of embodiment 1 using the adhesive layer of comparative example 1 Operation, the cutting die bonding film of comparison example 1.
(comparative example 2)
Instead of acrylic resin A163 mass parts use acrylic resin A2(trade name " Paracron W- 116.3 ", thermoplastic acrylic ester polymer, weight average molecular weight is 900,000, and glass transition temperature is -22 DEG C, work on root Industry Co. Ltd. system) 63 mass parts, it is in addition to this, same as the adhesive layer of embodiment 1 to operate, it is made on PET sliders The adhesive layer (10 μm of thickness) of comparative example 2.In addition, instead of the adhesive layer of embodiment 1, the bonding agent of comparative example 2 is used Layer, in addition to this, same as the cutting die bonding film of embodiment 1 to operate, the cutting chip engagement of comparison example 2 is thin Film.
(storage tensile modulus of adhesive layer)
For each adhesive layer of Examples 1 to 3 and Comparative Examples 1 and 2, it is based on using measurement of dynamic viscoelasticity device (commodity Name " Rheogel-E4000 ", UBM corporations) Measurement of Dynamic Viscoelasticity that carries out, find out storage tensile modulus at -15 DEG C and Storage tensile modulus at 23 DEG C.For the coupons for Measurement of Dynamic Viscoelasticity, each adhesive layer is laminated into being formed After laminated body obtained from 80 μm of thickness, the size of width 4mm × length 20mm is cut from the laminated body to prepare.In addition, In this measurement, distance between the Initial grip of coupons holding clamp is set as 10mm, mode determination is set as stretch mode, Measuring temperature range is set as -30 DEG C~100 DEG C, frequency is set as 10Hz, dynamic strain is set as ± 0.5 μm, will heat up speed Degree is set as 5 DEG C/min.By at -15 DEG C found out storage tensile modulus and 23 DEG C at storage tensile modulus it is shown in table 1.
The bonding force > of < adhesive layers
For the adhesive layer of each cutting die bonding film of Examples 1 to 3 and Comparative Examples 1 and 2, following work study Its 180 at -15 DEG C ° peel adhesion.First, it removes from cutting belt by adhesive layer, is fitted in the adhesive layer It is bonded facing rubber band (trade name " BT-315 ", Nitto Denko Corp's system) on the face of cutting belt side, is cut by the backing film It materialses piece (width 10mm × length 100mm).Then, coupons are fitted in into the SUS plates as adherend, by making 2kg Reciprocal 1 crimping operation of roller so that coupons is crimped with adherend.Later, it places 30 minutes at room temperature, then, uses drawing Stretch testing machine (trade name " Autograph AGS-J ", Shimadzu Scisakusho Ltd's system) measure adhesive layer coupons for 180 ° of peel adhesions of SUS plates.In this measurement, measuring temperature and/or exfoliation temperature are -15 DEG C, draw angle is 180 °, Tensile speed is 300mm/ minutes.By the stripping not including the peeling force that 10mm/ minutes initial in tension test show The average value of power is as 180 ° of peel adhesions (N/10mm).In addition, for each cutting core of Examples 1 to 3 and Comparative Examples 1 and 2 Measuring temperature is changed to 23 DEG C by the adhesive layer of chip bonding film by -15 DEG C, in addition to this, with 180 ° of strippings at -15 DEG C Bonding force measures same operation, measures 180 ° of peel adhesions at 23 DEG C.Their measurement result is shown in table 1.
Frame retentivity > at 23 DEG C of <
It is following to operate for each cutting die bonding film of Examples 1 to 3 and Comparative Examples 1 and 2, it studies to ring frame Stickiness at 23 DEG C and/or retentivity.It first, will using laminating apparatus (MA-3000II, the smart machine Co. Ltd. system in day east) The SUS ring frames (DISCO Corporation manufactures) of 12 inches of diameter fit in the bonding agent of cutting die bonding film Layer side.This is carried out under conditions of being fitted in fitting speed 10mm/ seconds and temperature 60 C.Thereafter, with horizontality keeping in box It is interior, it is placed 1 week at 23 DEG C.Then, confirm the presence or absence of ring frame self bonding oxidant layer stripping.The feelings of ring frame stripping will not be generated Condition is evaluated as good (〇), will generate the case where ring frame is removed and be evaluated as bad (×).By it evaluation result is shown in table 1.
Frame retentivity > at < -15 DEG C
It is following to operate for each cutting die bonding film of Examples 1 to 3 and Comparative Examples 1 and 2, it studies to ring frame - 15 DEG C at stickiness and/or retentivity.First, using laminating apparatus (MA-3000II, the smart machine Co. Ltd. system in day east), 12 inches of SUS ring frames (DISCO Corporation manufactures) of diameter are fitted in the bonding of cutting die bonding film Oxidant layer side.This is carried out under conditions of being fitted in fitting speed 10mm/ seconds and temperature 60 C.Thereafter, with mold separating device In the wafer cassette of (trade name " Die Separator DDS3200 ", DISCO Corporation systems), stored with horizontality Cutting die bonding film with ring frame is placed 1 week at -15 DEG C.It is engaged in cutting chip of the storage with ring frame In the box of film, the maintaining part which has abuts with ring frame and this is kept to carry the cutting die bonding film of ring frame, The cutting die bonding film is in and is not affected by the state directly supported from box.Then, confirm ring frame self bonding oxidant layer The presence or absence of stripping.The case where ring frame stripping will not generated, is evaluated as good (〇), will generate the case where ring frame is removed and be evaluated as Bad (×).By it evaluation result is shown in table 1.
(the cutting off property in cooling extension process (- 15 DEG C))
Using Examples 1 to 3 and each cutting die bonding film of comparative example 1, bonding process below is carried out, for cutting Disconnected the 1st extension process (cooling extension process) and the 2nd extension process (room temperature extension process) for separation.
It, will be by wafer processing adhesive tape (trade name " UB-3083D ", Nitto Denko Corp's system) in bonding process The semiconductor crystal wafer dividing body of holding fits in the adhesive layer of cutting die bonding film, later, divides from semiconductor crystal wafer Body removes wafer processing adhesive tape.In fitting, using laminating machine, fitting speed is set as 10mm/ seconds, sets temperature condition It is set as 0.15MPa for 60 DEG C, by pressure condition.In addition, semiconductor crystal wafer dividing body is operated as follows to be formed and be prepared.First, It is held in wafer processing adhesive tape (trade name " V12S-R2-P ", Nitto Denko Corp for being in together with ring frame System) state bare silicon wafer (12 inches of diameter, 780 μm of thickness, Tokyo Chemical Co., Ltd system), from one surface side using cut The slot segmentation that device (trade name " DFD6260 ", DISCO Corporation systems) forms singualtion by its rotating knife is (wide 25 μm of degree, 50 μm of depth, a subregion are the clathrate of 6mm × 12mm).Then, it is used in the fitting wafer processing of slot segmentation forming face After adhesive tape (trade name " UB-3083D ", Nitto Denko Corp's system), by above-mentioned wafer processing adhesive tape (trade name " V12S- R2-P ") it is removed from wafer.Then, using back side grinding attachment (trade name " DGP8760 ", DISCO Corporation systems), By the grinding from the another side of wafer (face for not forming slot segmentation) side, which is thinned to 20 μm of thickness, then, is led to It crosses the dry type polishing carried out using same device and mirror finishing is implemented to the grinding surface.As above operation forms semiconductor crystal wafer Dividing body (to be held in the state of wafer processing adhesive tape).Include multiple semiconductor chips in the semiconductor crystal wafer dividing body (6mm×12mm)。
Cooling extension process uses mold separating device (trade name " Die Separator DDS3200 ", DISCO Corporation systems), expanding element is cooled down by it to carry out.Specifically, first with semiconductor crystal wafer dividing body The frame of adhesive layer in above-mentioned cutting die bonding film, which is pasted, uses region (around workpiece stickup region), at room temperature Attach the SUS ring frames (DISCO Corporation systems) of 12 inches of diameter.Then, which is set It is placed in device, utilizes cutting die bonding film of the cooling expanding element extension with semiconductor crystal wafer dividing body of the device Cutting belt.In the cooling extends process, temperature is -15 DEG C, and expansion rate is 100mm/ seconds, propagation 7mm.
Room temperature extends process and uses mold separating device (trade name " Die Separator DDS3200 ", DISCO Corporation systems), it is carried out using its room temperature expanding element.Specifically, using the room temperature expanding element of the device, expand Exhibition have passed through the cutting belt of the cutting die bonding film with semiconductor crystal wafer dividing body of above-mentioned cooling extension process.At this Room temperature extends in process, and temperature is 23 DEG C, and expansion rate is 1mm/ seconds, propagation 10mm.Then, to have passed through room temperature extension Cutting die bonding film implement heat shrink processing.Its treatment temperature is 200 DEG C, and processing time is 20 seconds.
It studies and experienced the above procedure carried out using each cutting die bonding film of Examples 1 to 3 and comparative example 1 Stage in the sum with the semiconductor chip of adhesive layer cut off relative to contained in semiconductor crystal wafer dividing body The ratio of the sum of semiconductor chip.Also, for the cutting off property of adhesive layer, the situation which is 80% or more is evaluated For good (zero), the case where which is less than 80%, is evaluated as bad (×).It should be evaluation result is shown in table 1.
[evaluation]
The cutting die bonding film of Examples 1 to 3 at room temperature frame retentivity and cooling extension process (- 15 DEG C) in frame retentivity and cutting off property obtain good result.In contrast, the cutting chip engagement of comparative example 1 is thin Film since the storage tensile modulus of its adhesive layer is excessively high, can not be protected by the adhesive layer at -15 DEG C, 23 DEG C Hold ring frame.It can not implement the cooling extension process of the cutting die bonding film using comparative example 1.In addition, comparative example 2 is cut Die bonding film is cut since the storage tensile modulus of its adhesive layer is too low, therefore, it is impossible to should by cooling extension process Adhesive layer is fully cut off.
Table 1

Claims (10)

1. a kind of cutting die bonding film, has：
Cutting belt has the stepped construction comprising base material and adhesive phase；With
Described adhesive layer in adhesive layer, with the cutting belt is strippingly closely sealed,
The adhesive layer between the adhesive layer coupons of width 4mm Initial grip distance 10mm, frequency 10Hz, dynamic Storage tensile modulus under conditions of 5 DEG C/min of ± 0.5 μm of strain and heating rate at measure -15 DEG C is 1000~ Storage tensile modulus at 4000MPa and measure under the described conditions 23 DEG C is 10~240MPa.
2. cutting die bonding film according to claim 1, wherein the adhesive layer is in -15 DEG C, peel angle 180 ° and tensile speed show SUS planes in the disbonded test under conditions of 300mm/ minutes 180 ° of 1N/10mm or more Peel adhesion.
3. cutting die bonding film according to claim 1, wherein the adhesive layer is in 23 DEG C, peel angle 180 ° and tensile speed show 0.3N/10mm's or more in the disbonded test under conditions of 300mm/ minutes to SUS planes 180 ° of peel adhesions.
4. cutting die bonding film according to claim 2, wherein the adhesive layer is in 23 DEG C, peel angle 180 ° and tensile speed show 0.3N/10mm's or more in the disbonded test under conditions of 300mm/ minutes to SUS planes 180 ° of peel adhesions.
5. cutting die bonding film according to claim 1, wherein the adhesive layer includes glass transition temperature For -10~10 DEG C of polymer.
6. cutting die bonding film according to claim 4, wherein the adhesive layer includes glass transition temperature For -10~10 DEG C of polymer.
7. cutting die bonding film according to claim 1, wherein the adhesive layer is with 30 mass % ratios below Rate includes filler.
8. cutting die bonding film according to claim 1, wherein the adhesive layer is with 50~100 mass %'s Ratio includes high molecular weight components.
9. cutting die bonding film according to claim 1, wherein the adhesive layer is with the ratio of 1~10 mass % Rate includes liquid resin.
10. according to cutting die bonding film according to any one of claims 1 to 10, wherein the base material includes ethylene- Vinyl acetate co-polymer.
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